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Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar cells. With a suite of x-ray microprobe techniques, a multi-institutional collaboration led by researchers from the University of California, Berkeley, and Berkeley Lab studied the distribution of metal clusters in a variety of multicrystalline solar cells before and after processing. Their discovery that the size, spatial distribution, and chemical binding of metals within clusters is just as important as the total metal concentration in limiting the performance of multicrystalline silicon solar cells led to the concept of defect engineering by optimizing growth and processing sequences to trap metals in their least harmful state.

2

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar cells. With a suite of x-ray microprobe techniques, a multi-institutional collaboration led by researchers from the University of California, Berkeley, and Berkeley Lab studied the distribution of metal clusters in a variety of multicrystalline solar cells before and after processing. Their discovery that the size, spatial distribution, and chemical binding of metals within clusters is just as important as the total metal concentration in limiting the performance of multicrystalline silicon solar cells led to the concept of defect engineering by optimizing growth and processing sequences to trap metals in their least harmful state.

3

Engineering Metal Impurities in Multicrystalline Silicon Solar...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

from inexpensive low-grade silicon. Artist's impression of an intense beam of synchrotron light striking a solar cell and the resulting fluorescence image of the distribution of...

4

Recombination and Trapping in Multicrystalline Silicon Solar Cells .  

E-Print Network [OSTI]

??In broad terms, this thesis is concerned with the measurement and interpretation of carrier lifetimes in multicrystalline silicon. An understanding of these lifetimes in turn… (more)

Macdonald, D

2008-01-01T23:59:59.000Z

5

Interaction between process technology and material quality during the processing of multicrystalline silicon solar cells  

Science Journals Connector (OSTI)

Multicrystalline silicon is the most used material for the production of silicon solar cells. The quality of the as grown material depends on the quality of the feedstock and the crystallization process. Bulk ...

Dietmar Borchert; Markus Rinio

2009-01-01T23:59:59.000Z

6

Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation and rapid thermal annealing  

E-Print Network [OSTI]

of terrestrial solar cells as compared to classical furnace or pulsed laser annealing. Unfortunately, drawbacks695 Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation with classical furnace annealing or with classical diffusion process. Revue Phys. Appl. 22 (1987) 695-700 JUILLET

Paris-Sud XI, Université de

7

Enhancement of photovoltaic properties of multicrystalline silicon solar cells by combination of buried metallic contacts and thin porous silicon  

SciTech Connect (OSTI)

Photovoltaic properties of buried metallic contacts (BMCs) with and without application of a front porous silicon (PS) layer on multicrystalline silicon (mc-Si) solar cells were investigated. A Chemical Vapor Etching (CVE) method was used to perform front PS layer and BMCs of mc-Si solar cells. Good electrical performance for the mc-Si solar cells was observed after combination of BMCs and thin PS films. As a result the current-voltage (I-V) characteristics and the internal quantum efficiency (IQE) were improved, and the effective minority carrier diffusion length (Ln) increases from 75 to 110 {mu}m after BMCs achievement. The reflectivity was reduced to 8% in the 450-950 nm wavelength range. This simple and low cost technology induces a 12% conversion efficiency (surface area = 3.2 cm{sup 2}). The obtained results indicate that the BMCs improve charge carrier collection while the PS layer passivates the front surface. (author)

Ben Rabha, M.; Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l'Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2010-03-15T23:59:59.000Z

8

Investigation of surface features for 17.2% efficiency multi-crystalline silicon solar cells  

Science Journals Connector (OSTI)

Abstract Maskless reactive ion etching (RIE) texturing using a gas mixture of sulfur hexafluoride–oxygen (SF6/O2) and sulfur hexafluoride–oxygen–chlorine (SF6/O2/Cl2) was investigated to reveal the proper shape in surface features for higher efficiency multi-crystalline silicon (mc-Si) solar cells; hence, needle-like and round-top cone (RT cone) shapes were formed by RIE texturing with SF6/O2 gas, and pyramid and inverted pyramid shapes by RIE texturing with SF6/O2/Cl2 gas. RIE-textured mc-Si solar cells were fabricated on these surface features except for an inverted pyramid structure in the industrial production line. Performances of cells with RT cone and pyramid shapes were enhanced, whereas those with a needle-like cone were degraded, compared to the reference cells. Among these cells, those with RT cones represented the highest efficiency at 17.22%. By considering diode characteristics and electroluminescence images of fabricated solar cells, the proper shape for surface features was intimately related to control of the formation of a stable emitter layer as well as the reduction of surface reflectance.

Kwang Mook Park; Myoung Bok Lee; Sie Young Choi

2015-01-01T23:59:59.000Z

9

Temperature-Dependent Photoluminescence Imaging and Characterization of a Multi-Crystalline Silicon Solar Cell Defect Area: Preprint  

SciTech Connect (OSTI)

Photoluminescence (PL) imaging is used to detect areas in multi-crystalline silicon that appear dark in band-to-band imaging due to high recombination. Steady-state PL intensity can be correlated to effective minority-carrier lifetime, and its temperature dependence can provide additional lifetime-limiting defect information. An area of high defect density has been laser cut from a multi-crystalline silicon solar cell. Both band-to-band and defect-band PL imaging have been collected as a function of temperature from ~85 to 350 K. Band-to-band luminescence is collected by an InGaAs camera using a 1200-nm short-pass filter, while defect band luminescence is collected using a 1350-nm long pass filter. The defect band luminescence is characterized by cathodo-luminescence. Small pieces from adjacent areas within the same wafer are measured by deep-level transient spectroscopy (DLTS). DLTS detects a minority-carrier electron trap level with an activation energy of 0.45 eV on the sample that contained defects as seen by imaging.

Johnston, S.; Yan, F.; Li, J.; Romero, M. J.; Al-Jassim, M.; Zaunbrecher, K.; Sidelkheir, O.; Blosse, A.

2011-07-01T23:59:59.000Z

10

Structural properties of Ge doped multicrystalline Silicon wafers and Solar cells.  

E-Print Network [OSTI]

?? The efficiency of multi crystalline silicon solar cells is around 17% but the theoretical limit is 33,7 %. Impurities and dislocations are the main… (more)

Lilliestråle, Johan Carl Åke

2012-01-01T23:59:59.000Z

11

New Metallization Technique Suitable for 6-MW Pilot Production of Efficient Multicrystalline Solar Cells Using Upgraded Metallurgical Silicon: Final Technical Progress Report, December 17, 2007-- June 16, 2009  

Broader source: Energy.gov [DOE]

This report describes CaliSolar's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. During this time, CaliSolar evolved from a handful of employees to over 100 scientists, engineers, technicians, and operators. On the technical side, the company transitioned from a proof-of-concept through pilot-scale to large-scale industrial production. A fully automated 60-megawatt manufacturing line was commissioned in Sunnyvale, California. The facility converts upgraded metallurgical-grade silicon feedstock to ingots, wafers, and high-efficiency multicrystalline solar cells.

12

Assembly and characterization of colloid-based antireflective coatings on multicrystalline silicon solar cells  

E-Print Network [OSTI]

make them superhydrophobic and/or self-cleaning. 1 Introduction Photovoltaic (PV) devices such as solar solar cells Brian G. Prevo,{ Emily W. Hon and Orlin D. Velev* Received 4th September 2006, Accepted 10th solar cells. The nanocoatings reduced the reflectance of the solar cells by approximately 10% across

Velev, Orlin D.

13

Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells Using AFM-Based Electrical Techniques with Nanometer Resolution: Preprint  

SciTech Connect (OSTI)

Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

Jiang, C. S.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.; Heath, J. T.

2011-07-01T23:59:59.000Z

14

Mechanical Behavior of Diamond-Sawn Multi-Crystalline Silicon Wafers and its Improvement  

Science Journals Connector (OSTI)

Poor mechanical property is identified as a potential barrier to commercial development of diamond wire sawn multi-crystalline silicon wafers. 3-point bending tests of the diamond-sawn multi-crystalline silico...

Hongchen Meng; Lang Zhou

2014-04-01T23:59:59.000Z

15

E-Print Network 3.0 - area multicrystalline silicon Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

key sensitive parameters for environmental impacts of grid-connected PV systems with LCA , In Proceedings of the 23rd Summary: grade silicon Multicrystalline silicon ingot...

16

Influence of Fe Contamination on the Minority Carrier Lifetime of Multi-crystalline Silicon  

Science Journals Connector (OSTI)

We investigate the influence of Fe contamination on the minority carrier lifetimes of multi-crystalline silicon. The minority carrier lifetime is measured by the microwave photoconductive decay method. The original bulk lifetime is about 30 ?s after passivation with iodine solution. After intentional Fe contamination, the bulk lifetime declines with increasing temperature. Fast cooling in air conduces to the formation of more interstitial Fe ([Fe]i). Slow cooling through the control of the furnace temperature limits the formation of more [Fe]i, but leads to the formation of precipitation. The data support the idea that the minority carrier lifetime in multi-crystalline silicon mainly depends on the distribution of Fe but not the total amount. A favorite effect of [Fe]i gettering is discovered after conventional phosphorus diffusion, and the [Fe]i concentration remaining in the silicon wafer is acceptable for solar cell applications.

Meng Xia-Jie; Ma Zhong-Quan; Li Feng; Shen Cheng; Yin Yan-Ting; Zhao Lei; Li Yong-Hua; Xu Fei

2010-01-01T23:59:59.000Z

17

Materials Science and Engineering B 134 (2006) 282286 Control of metal impurities in "dirty" multicrystalline silicon for solar cells  

E-Print Network [OSTI]

processing of solar cells with satisfactory energy conversion efficiency based on inexpensive feedstock impurity content can have widely different minority carrier diffusion lengths based on the distribution of photovoltaics (PV) in the energy market. The fluctuations of availability and feedstock cost determine

18

On the nature and removal of saw marks on diamond wire sawn multicrystalline silicon wafers  

Science Journals Connector (OSTI)

Abstract Clearly visible saw marks are a significant barrier to commercial use of diamond wire sawn multicrystalline silicon wafers for solar cells. Two types of saw marks on the diamond-cut multicrystalline silicon wafers are identified—the millimeter scale round-run fringes caused by round-running of the saw wires, and the micron scale scratches caused by scribing of the diamond tips. The latter consists of smooth and shiny grooves covered by a thin layer of amorphous phase. The micro-roughness of diamond-cut wafers is actually ~25% less than that of the conventional slurry-cut wafers. The reason for the visibility of the round-run fringes to naked eyes, and for the relatively rough appearance of diamond-cut wafers, is the visual enhancement from the shiny scratches. Therefore, the key to remove the round-run fringes is to roughen the smooth grooves, as flattening the very slightly sloped fringe zones is very difficult due to lack of chemical contrast over them. Acid-etching texturization cannot remove the saw marks on the diamond-cut silicon wafers. Alkaline-etching can only remove the saw marks on grains near (0 0 1) orientation. A vapor blast etching method has been attempted. The preliminary result is encouraging—complete removal of the saw marks has been achieved, along with a good surface texture, which reduces the light reflectivity to 19%.

Wenhao Chen; Xiaomei Liu; Miao Li; Chuanqiang Yin; Lang Zhou

2014-01-01T23:59:59.000Z

19

Imaging Study of Multi-Crystalline Silicon Wafers Throughout the Manufacturing Process: Preprint  

SciTech Connect (OSTI)

Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging is used to characterize defects and material quality on bricks and wafers. Defect regions within the wafers are influenced by brick position within an ingot and height within the brick. The defect areas in as-cut wafers are compared to imaging results from reverse-bias electroluminescence and dark lock-in thermography and cell parameters of near-neighbor finished cells. Defect areas are also characterized by defect band emissions. The defect areas measured by these techniques on as-cut wafers are shown to correlate to finished cell performance.

Johnston, S.; Yan, F.; Zaunbracher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

2011-07-01T23:59:59.000Z

20

Method for processing silicon solar cells  

DOE Patents [OSTI]

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

1997-05-06T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon  

SciTech Connect (OSTI)

This manuscript concerns the application of infrared birefringence imaging (IBI) to quantify macroscopic and microscopic internal stresses in multicrystalline silicon (mc-Si) solar cell materials. We review progress to date, and advance four closely related topics. (1) We present a method to decouple macroscopic thermally-induced residual stresses and microscopic bulk defect related stresses. In contrast to previous reports, thermally-induced residual stresses in wafer-sized samples are generally found to be less than 5 MPa, while defect-related stresses can be several times larger. (2) We describe the unique IR birefringence signatures, including stress magnitudes and directions, of common microdefects in mc-Si solar cell materials including: {beta}-SiC and {beta}-Si{sub 3}N{sub 4} microdefects, twin bands, nontwin grain boundaries, and dislocation bands. In certain defects, local stresses up to 40 MPa can be present. (3) We relate observed stresses to other topics of interest in solar cell manufacturing, including transition metal precipitation, wafer mechanical strength, and minority carrier lifetime. (4) We discuss the potential of IBI as a quality-control technique in industrial solar cell manufacturing.

Ganapati, Vidya; Schoenfelder, Stephan; Castellanos, Sergio; Oener, Sebastian; Koepge, Ringo; Sampson, Aaron; Marcus, Matthew A.; Lai, Barry; Morhenn, Humphrey; Hahn, Giso; Bagdahn, Joerg; Buonassisi1, Tonio

2010-05-05T23:59:59.000Z

22

Application of infrared birefringence imaging for measuring residual stress in multicrystalline, quasi-mono, dendritic web, and string ribbon silicon for solar cells  

E-Print Network [OSTI]

One of the parameters with highest impact on photovoltaic module cost is manufacturing yield during solar cell production. Yield is, to a great extent, directly affected by the crystallization technique used to grow the ...

Castellanos Rodríguez, Sergio

2014-01-01T23:59:59.000Z

23

European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2CV.2.36 DETERMINING THE BULK LIFETIME OF UNPASSIVATED MULTICRYSTALLINE SILICON WAFERS  

E-Print Network [OSTI]

. Brendel1 , R. Falster2 and R. Sinton3 1 Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1 Sinton Instruments, 4720 Walnut Street, Suite 102, Boulder, CO 80301, USA ABSTRACT: The determination potential and benefit of carrier lifetime measure- ments on unprocessed bare wafers, Sinton et al. [3] pre

24

Self Aligned Cell: Scaling Up Manufacture of a Cost Effective Cell Architecture for Multicrystalline Silicon Photovoltaics  

SciTech Connect (OSTI)

Two areas of technology for fabrication of higher efficiency Si-wafer solar cells were addressed: (1) the formation of structured texturing that is an improvement over the industry-standard isotexture process for multicrystalline wafers. (2) the formation of fine line (<50 micron) metallization seed layers in a self-aligned manner where the fingers can be automatically and perfectly lined up to a selective emitter and where expensive silver screen printing paste can be mostly replaced by plating up the seed layers with silver or copper. The benefits are: a) Lower reflectivity , b) Decoupling the performance of the texture from the saw damage, thus allowing for better advances in sawing and a more robust wet process. 1366 Technologies developed 2 pilot machines for 1) deposition and patterning of low-cost resist layers to enable simultaneous Honeycomb front texturing and groove formation for multicrystalline Si wafers, and 2) fine-line dispensing of materials that are self aligned to the grooves.

Gabor, A.; van Mierlo, F.

2010-12-01T23:59:59.000Z

25

Comparison of Photoluminescence Imaging on Starting Multi-Crystalline Silicon Wafers to Finished Cell Performance: Preprint  

SciTech Connect (OSTI)

Photoluminescence (PL) imaging techniques can be applied to multicrystalline silicon wafers throughout the manufacturing process. Both band-to-band PL and defect-band emissions, which are longer-wavelength emissions from sub-bandgap transitions, are used to characterize wafer quality and defect content on starting multicrystalline silicon wafers and neighboring wafers processed at each step through completion of finished cells. Both PL imaging techniques spatially highlight defect regions that represent dislocations and defect clusters. The relative intensities of these imaged defect regions change with processing. Band-to-band PL on wafers in the later steps of processing shows good correlation to cell quality and performance. The defect band images show regions that change relative intensity through processing, and better correlation to cell efficiency and reverse-bias breakdown is more evident at the starting wafer stage as opposed to later process steps. We show that thermal processing in the 200 degrees - 400 degrees C range causes impurities to diffuse to different defect regions, changing their relative defect band emissions.

Johnston, S.; Yan, F.; Dorn, D.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Ounadjela, K.

2012-06-01T23:59:59.000Z

26

Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based  

E-Print Network [OSTI]

Quantifying the effect of metal-rich precipitates on minority carrier diffusion length diffusion length of individual transition metal species in multicrystalline silicon. SR-XBIC, -XRF, and -XAS correlation between local concentrations of copper and nickel silicide precipitates and a decrease of minority

27

Cheaper Silicon Found Effective for Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Cheaper Silicon Found Effective for Solar Cells Cheaper Silicon Found Effective for Solar Cells A research team from the University of California at Berkeley, Lawrence Berkeley National Laboratory, Argonne National Laboratory, and Pacific Northwest National Laboratory, using U.S. Department of Energy (DOE) synchrotron light sources, has successfully shown that inexpensive silicon has the potential to be used for photovoltaic (PV) devices, commonly known as solar cells. In a new approach-whose findings were published online in Nature Materials (August 14, 2005)-the researchers used nanodefect engineering to control transition metal contamination in order to produce impurity-rich, performance-enhanced multicrystalline silicon (mc-Si) material. "Solar energy is often touted as the most promising and secure energy

28

A hybrid life-cycle inventory for multi-crystalline silicon PV module manufacturing in China  

Science Journals Connector (OSTI)

China is the world's largest manufacturer of multi-crystalline silicon photovoltaic (mc-Si PV) modules, which is a key enabling technology in the global transition to renewable electric power systems. This study presents a hybrid life-cycle inventory (LCI) of Chinese mc-Si PV modules, which fills a critical knowledge gap on the environmental implications of mc-Si PV module manufacturing in China. The hybrid LCI approach combines process-based LCI data for module and poly-silicon manufacturing plants with a 2007 China IO-LCI model for production of raw material and fuel inputs to estimate 'cradle to gate' primary energy use, water consumption, and major air pollutant emissions (carbon dioxide, methane, sulfur dioxide, nitrous oxide, and nitrogen oxides). Results suggest that mc-Si PV modules from China may come with higher environmental burdens that one might estimate if one were using LCI results for mc-Si PV modules manufactured elsewhere. These higher burdens can be reasonably explained by the efficiency differences in China's poly-silicon manufacturing processes, the country's dependence on highly polluting coal-fired electricity, and the expanded system boundaries associated with the hybrid LCI modeling framework. The results should be useful for establishing more conservative ranges on the potential 'cradle to gate' impacts of mc-Si PV module manufacturing for more robust LCAs of PV deployment scenarios.

Yuan Yao; Yuan Chang; Eric Masanet

2014-01-01T23:59:59.000Z

29

SOLAR MARKET POWERS SILICON  

Science Journals Connector (OSTI)

SOLAR MARKET POWERS SILICON ... Polysilicon shortages are boon to manufacturers, bane of solar energy industry ... Solar energy is a relatively new market for polysilicon manufacturers. ...

JEAN-FRA&CCEDIL;NOIS TREMBLAY

2006-10-02T23:59:59.000Z

30

Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint  

SciTech Connect (OSTI)

Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

Yan, F.; Johnston, S.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

2011-07-01T23:59:59.000Z

31

Sacrificial high-temperature phosphorus diffusion gettering for lifetime improvement of multicrystalline silicon wafers  

E-Print Network [OSTI]

Iron is among the most deleterious lifetime-limiting impurities in crystalline silicon solar cells. In as-grown material, iron is present in precipitates and in point defects. To achieve conversion efficiencies in excess ...

Scott, Stephanie Morgan

2014-01-01T23:59:59.000Z

32

Estimation of solidification interface shapes in a boronphosphorus compensated multicrystalline silicon ingot via photoluminescence imaging  

E-Print Network [OSTI]

0200, Australia b APOLLON SOLAR, 66 Cours Charlemagne, 69002 Lyon, France a r t i c l e i n f o Article solar cells from this kind of material lies in the ability of the silicon growth process to obtain presented to attach cameras on two sides of a transparent furnace, allowing interface shapes to be estimated

33

Thin silicon solar cells  

SciTech Connect (OSTI)

The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M. [Astro Power Inc., Solar Park, Newark, DE (United States)

1992-12-01T23:59:59.000Z

34

Highly Efficient Multi-crystalline Solar Cells Using Rear Surface Passivation Technology  

Science Journals Connector (OSTI)

Abstract In this work, we have successfully demonstrated the rear side passivation technology applied to multi-crystalline p-type wafers. The AlOx/SiNx stack was selected as rear side passivation layer combined with suitable laser opening source and metallization materials. The performance of multi-crystalline cell reached an efficiency level of 18%-19% applying this technology and the light induced degradation and module power output performance are attractive compared with current cell type.

Yan-Kai Chiou; Hung-Ming Lin; Kuang-Hui Hung; Cheng-Yu Ko; Chia-Hung Wu; Hsieng-Chen Yen; Shyuan-Fang Chen; Nai-Tien Ou; Walt K.W. Huang

2014-01-01T23:59:59.000Z

35

Journal of Crystal Growth 287 (2006) 402407 Transition metals in photovoltaic-grade ingot-cast multicrystalline  

E-Print Network [OSTI]

Journal of Crystal Growth 287 (2006) 402­407 Transition metals in photovoltaic-grade ingot silicon (mc-Si) ingot casting for cost-effective solar cell wafer production. Highly sensitive to the invited talk ``Transition metals in photovoltaic-grade multicrystalline silicon'' by A.A. Istratov, T

36

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

SciTech Connect (OSTI)

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

37

Heterojunction Silicon Microwire Solar Cells  

Science Journals Connector (OSTI)

Heterojunction Silicon Microwire Solar Cells ... § Center for Advanced Photovoltaic Devices and Systems, University of Waterloo, 200 University Ave W, Waterloo, Ontario N2L 3G1, Canada ...

Majid Gharghi; Ehsanollah Fathi; Boubacar Kante; Siva Sivoththaman; Xiang Zhang

2012-11-21T23:59:59.000Z

38

Silicon solar cells: state of the art  

Science Journals Connector (OSTI)

...Roberto Amendolia and Can Li Silicon solar cells: state of the art Martin A. Green...majority of photovoltaic (PV) solar cells produced to date have been based...this point are also explored. solar cells|silicon solar cells|silicon...

2013-01-01T23:59:59.000Z

39

Hybrid Silicon Nanocone–Polymer Solar Cells  

Science Journals Connector (OSTI)

Hybrid Silicon Nanocone–Polymer Solar Cells ... In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. ...

Sangmoo Jeong; Erik C. Garnett; Shuang Wang; Zongfu Yu; Shanhui Fan; Mark L. Brongersma; Michael D. McGehee; Yi Cui

2012-04-30T23:59:59.000Z

40

Crystalline-Silicon/Organic Heterojunctions for Solar  

E-Print Network [OSTI]

-semiconductors is potentially cheaper, but the organic solar cells are not very efficient. In this thesis we explore if organic semiconductors can be integrated with silicon to form hybrid organic/silicon solar cells that are both efficient, a silicon/organic heterojunction solar cell with an open-circuit voltage of 0.59 V and power conversion

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

PV Crystalox Solar AG formerly PV Silicon AG | Open Energy Information  

Open Energy Info (EERE)

PV Crystalox Solar AG formerly PV Silicon AG PV Crystalox Solar AG formerly PV Silicon AG Jump to: navigation, search Name PV Crystalox Solar AG (formerly PV Silicon AG) Place Abingdon, England, United Kingdom Zip OX14 4SE Sector Solar Product UK-based manufacturer of multicrystalline ingots and wafers to the solar industry; as of early 2009, to output solar-grade polysilicon. Coordinates 36.71049°, -81.975194° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":36.71049,"lon":-81.975194,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

42

Laser wafering for silicon solar.  

SciTech Connect (OSTI)

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

43

Enabling Thin Silicon Solar Cell Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Enabling Thin Silicon Solar Cell Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45°, -45°, and dendritic crack patterns. The effort to shift U.S. energy reliance from fossil fuels to renewable sources has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely adopted because it significantly reduces costs; however, silicon is brittle, and thinner silicon, coupled with other recent trends in SPV technologies (thinner glass, lighter or no metal frames, increased use of certain polymers for encapsulation of the silicon cells), is more susceptible to stress and cracking. When the thin

44

Silicon Solar Energy Converters  

Science Journals Connector (OSTI)

Theory is given for the design of siliconsolar energy converters commonly known as the Bell Solar Battery. Values are given for the various parameters in the design theory. Experimental data are presented and compared with the theoretical relations based on a simple model.

M. B. Prince

1955-01-01T23:59:59.000Z

45

An Investigation of the Properties of Silicon Nitride (SiNx) Thin Films Prepared by RF Sputtering for Application in Solar Cell Technology  

Science Journals Connector (OSTI)

Silicon nitride films deposited on glass and multicrystalline silicon by RF sputtering with power between 100–350W. The target was hot pressed Si3N4 ceramic. The morphology and optical properties of films are inv...

Negin Manavizadeh; Alireza Khodayari…

2009-01-01T23:59:59.000Z

46

20% efficiency silicon solar cells  

Science Journals Connector (OSTI)

Further improvements in crystalline silicon solar cell performance have been obtained by combining the high levels of surface recombination control demonstrated in earlier passivated emitter solar cells with an improved optical approach. This approach involves the use of microgrooved surfaces which retain the advantages of pyramidally textured surfaces while avoiding some disadvantages of the latter. The approach results in a 5–6% improvement in cell short?circuit current density for cells fabricated on 0.1 and 0.2 ??cm (?p type) substrates. This results in an energy conversion efficiency for these devices above 20% under standard terrestrial test conditions (AM1.5 100 mW/cm2) for the first time.

A. W. Blakers; M. A. Green

1986-01-01T23:59:59.000Z

47

Chapter IB-3 - Low-Cost Industrial Technologies for Crystalline Silicon Solar Cells  

Science Journals Connector (OSTI)

Publisher Summary Silicon substrates used in commercial solar cell processes contain a near-surface saw-damaged layer, which has to be removed at the beginning of the process. Thickness of the damage depends on the technique used in wafering of the ingot. A layer with thickness of 20 to 30 ?m has to be etched from both sides of wafers cut by an inner-diameter blade saw, while only 10 to 200 ? m is enough when a wire saw is used. The etching process has to be slightly modified when applied to multicrystalline substrates. Too fast or prolonged etching can produce steps at grain boundaries. This can lead to problems with interruptions of metal contacts. This problem can be avoided by an isotropic etching based on a mixture of nitric, acetic, and hydrofluoric acids. However, a strong exothermic reaction makes this etching process difficult to control and toxicity of the solution creates safety and waste disposal problems. The silicon surface after saw damage etching is shiny and reflects more than 35% of incident light. The reflection losses in commercial solar cells are reduced mainly by random chemical texturing. Surface texturing reduces the optical reflection from the single crystalline silicon surface to less than 10% by allowing the reflected ray to be recoupled into the cell.

Jozef Szlufcik; S. Sivoththaman; Johan F. Nijs; Robert P. Mertens; Roger Van Overstraeten

2012-01-01T23:59:59.000Z

48

Fabricating solar cells with silicon nanoparticles  

DOE Patents [OSTI]

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02T23:59:59.000Z

49

Arrays of ultrathin silicon solar microcells  

DOE Patents [OSTI]

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

2014-03-25T23:59:59.000Z

50

Manufacture of silicon carbide using solar energy  

DOE Patents [OSTI]

A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Glatzmaier, Gregory C. (Boulder, CO)

1992-01-01T23:59:59.000Z

51

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents [OSTI]

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

Kaschmitter, J.L.

1996-07-23T23:59:59.000Z

52

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

53

Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material  

E-Print Network [OSTI]

thermodynamic considerations that unlike certain metal species, copper tends to form a silicide pathways. In all samples, copper silicide Cu3Si is the only phase of copper identified. It is noted from

54

California: TetraCell Silicon Solar Cell Improves Efficiency...  

Energy Savers [EERE]

California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award August 16, 2013 -...

55

GCL Solar Energy Technology Holdings formerly GCL Silicon aka...  

Open Energy Info (EERE)

GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name: GCL Solar Energy Technology Holdings (formerly GCL...

56

Coating for Silicon Solar Cell by Using Silvaco Software  

E-Print Network [OSTI]

efficiency of SiO 2/Si3N 4silicon solar cell. The solar cell structure was modelled by using Silvaco software

A. Lennie; H. Abdullah; Z. M. Shila; M. A. Hannan

57

Life-cycle assessment of multi-crystalline photovoltaic (PV) systems in China  

Science Journals Connector (OSTI)

Abstract This study performs a life-cycle assessment for a photovoltaic (PV) system with multi-crystalline silicon (multi-Si) modules in China. It considers the primary energy demand, energy payback time (EPBT), and environmental impacts, such as global warming potential and eutrophication, over the entire life cycle of the PV system, including the upstream process, ranging from silica extraction to the multi-Si purification, the midstream process, involving crystalline silicon ingot growth and wafering; and the downstream process, consisting of cell and module fabrication. The data were collected with recommendations provided by the ISO norms and acquired from typical PV companies in China. The results show that the most critical phase of life cycle of Chinese PV system was the transformation of metallic silicon into solar silicon, which was characterized by high electricity consumption, representing most of the environmental impact. The other electricity generation systems were compared to PV. Considering that Chinese electricity is mainly produced by coal-fired power plants, the installation of multi-Si PV systems is recommended over exporting them from China. Furthermore, being higher solar radiation areas, areas in western China, such as the Tibet Autonomous Region, northeastern Qinghai, and the western borders of Gansu, are best suited for the installation of the PV systems even if the long distance of transportation. Finally, recommendations were provided with respect to the sustainable development of the Chinese PV industry and environmental protection.

Yinyin Fu; Xin Liu; Zengwei Yuan

2014-01-01T23:59:59.000Z

58

Silicon point contact concentrator solar cells  

SciTech Connect (OSTI)

Experimental results are presented for thin high resistivity concentrator silicon solar cells which use a back-side point-contact geometry. Cells of 130 and 233 micron thickness were fabricated and characterized. The thin cells were found to have efficiencies greater than 22 percent for incident solar intensities of 3 to 30 W/sq cm. Efficiency peaked at 23 percent at 11 W/sq cm measured at 22-25 C. Strategies for obtaining higher efficiencies with this solar cell design are discussed. 8 references.

Sinton, R.A.; Kwark, Y.; Swirhun, S.; Swanson, R.M.

1985-08-01T23:59:59.000Z

59

Development efforts on silicon solar cells  

SciTech Connect (OSTI)

This report presents a summary of the major results from the silicon high-concentration solar cell program at Stanford University from the period 1983--1990. Following a detailed design study, efforts were focused upon experimental verification of the modeled results that predicted 28% efficiencies for a new 500X concentrator solar cell design. A history of the research progress is given detailing the critical experiments that enabled the demonstration of 19.6% cells in 1983, then subsequent improvements culminating in efficiencies over 28% by 1987. In addition to laboratory efficiency improvements, the report details advances in the understanding of the fundamental device physics and modeling of silicon solar cell operation. The latter stages of the program included the development of module-ready cells in large quantity for the EPRI prototype 500X concentrator modules. Several of these 48-cell modules are currently in the field under test.

Sinton, R.A.; Swanson, R.M. (Stanford Univ., CA (United States))

1992-02-01T23:59:59.000Z

60

Indium oxide/n-silicon heterojunction solar cells  

DOE Patents [OSTI]

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1982-12-28T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Efficiency of silicon solar cells containing chromium  

DOE Patents [OSTI]

Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

1982-01-01T23:59:59.000Z

62

Origami-enabled deformable silicon solar cells  

SciTech Connect (OSTI)

Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics.

Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Tu, Hongen; Xu, Yong [Electrical and Computer Engineering, Wayne State University, 5050 Anthony Wayne Dr., Detroit, Michigan 48202 (United States); Song, Zeming; Jiang, Hanqing, E-mail: hanqing.jiang@asu.edu [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Yu, Hongyu, E-mail: hongyu.yu@asu.edu [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); School of Earth and Space Exploration, Arizona State University, Tempe, Arizona 85287 (United States)

2014-02-24T23:59:59.000Z

63

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1995-01-01T23:59:59.000Z

64

Laboratory experiments with silicon solar cells  

Science Journals Connector (OSTI)

The uses of silicon solar cells as subjects of experiments in undergraduate teaching laboratories are discussed. The basic theory of these cells is presented including equivalent circuits and characteristic equations. Fundamental experiments on the power output and efficiency which are appropriate for non?science majors’ courses are detailed as well as more advanced experiments on cell parameters. Experimental results and agreement with theory are presented for a typical inexpensive cell.

D. W. Kammer; M. A. Ludington

1977-01-01T23:59:59.000Z

65

Hole Selective MoOx Contact for Silicon Solar Cells  

Science Journals Connector (OSTI)

Hole Selective MoOx Contact for Silicon Solar Cells ... This work has important implications toward enabling a novel class of junctionless devices with applications for solar cells, light-emitting diodes, photodetectors, and transistors. ... Junctionless solar cells; silicon photovoltaics; heterojunctions; dopant-free contact; molybdenum trioxide ...

Corsin Battaglia; Xingtian Yin; Maxwell Zheng; Ian D. Sharp; Teresa Chen; Stephen McDonnell; Angelica Azcatl; Carlo Carraro; Biwu Ma; Roya Maboudian; Robert. M. Wallace; Ali Javey

2014-01-07T23:59:59.000Z

66

Investigating the efficiency of Silicon Solar cells at  

E-Print Network [OSTI]

Investigating the efficiency of Silicon Solar cells at different temperatures and wavelengths to study the characteristics of silicon photovoltaic cells (solar cells). We vary the wavelength of light as well as the temperature of the solar cell to investigate how the open voltage across the cell varies

Attari, Shahzeen Z.

67

Amorphous silicon passivated contacts for diffused junction silicon solar cells  

Science Journals Connector (OSTI)

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n+) and boron (p+) diffused surfaces decreases by factors of ?25 and ?10 respectively. Conversely the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm2 for n+ and ?100 m? cm2 for p+ surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n+ surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

J. Bullock; A. Cuevas

2014-01-01T23:59:59.000Z

68

Amorphous silicon passivated contacts for diffused junction silicon solar cells  

SciTech Connect (OSTI)

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

Bullock, J., E-mail: james.bullock@anu.edu.au; Yan, D.; Wan, Y.; Cuevas, A. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [École Polytechnique Fédérale de Lausanne (EPFL), Institute of micro engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory, Maladière 71, CH-200 Neuchâtel (Switzerland)

2014-04-28T23:59:59.000Z

69

High-efficiency third-generation silicon solar cells  

Science Journals Connector (OSTI)

The results of investigating third-generation matrix silicon solar cells with an efficiency of more than 25% during conversion of concentrated solar radiation are given. Electrical and optical characteristics ......

D. S. Strebkov; V. I. Polyakov

2011-08-01T23:59:59.000Z

70

Heterojunction solar cells produced by porous silicon layer transfer technology  

Science Journals Connector (OSTI)

In this paper, we present the result of heterojunction solar cells based on porous silicon layer transfer technology. a-Si/c-Si structured solar cells were prepared in which the c-Si ... was investigated. The spe...

Zhihao Yue; Honglie Shen; Lei Zhang; Bin Liu; Chao Gao; Hongjie Lv

2012-09-01T23:59:59.000Z

71

A High Efficiency Silicon Solar Cell Production Technology  

Science Journals Connector (OSTI)

BP Solar have developed a cost-effective production technology for the manufacture of high efficiency laser grooved buried grid (LGBG) crystalline silicon solar cells. The process has demonstrated 17–18% ... a ne...

N. B. Mason; D. Jordan; J. G. Summers

1991-01-01T23:59:59.000Z

72

Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,  

E-Print Network [OSTI]

alternative energy solution. KEYWORDS: Nanotexture, solar cell, heterojunction, conductive polymer, light solar cell.1 Conventional Si solar cells have p-n junctions inside for an efficient extraction of lightHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

Cui, Yi

73

27. 5-percent silicon concentrator solar cells  

SciTech Connect (OSTI)

Recent advances in silicon solar cells using the backside point-contact configuration have been extended resulting in 27.5-percent efficiencies at 10 W/sq cm (100 suns, 24 C), making these the most efficient solar cells reported to date. The one-sun efficiencies under an AM1.5 spectrum normalized to 100 mW/sq cm are 22 percent at 24 C based on the design area of the concentrator cell. The improvements reported here are largely due to the incorportation of optical light trapping to enhance the absorption of weakly absorbed near bandgap light. These results approach the projected efficiencies for a mature technology which are 23-24 percent at one sun and 29 percent in the 100-350-sun (10-35 W/sq cm) range. 10 references.

Sinton, R.A.; Kwark, Y.; Gan, J.Y.; Swanson, R.M.

1986-10-01T23:59:59.000Z

74

Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cells  

E-Print Network [OSTI]

particles, either oxidized and/or present with multiple other metal species reminiscent of stainless steels equipment, or feedstock, and b the more numerous, homogeneously distributed, and smaller iron silicide involving atomically dissolved iron in the melt or in the crystal. It was found that iron silicide

75

Conducting polymer and hydrogenated amorphous silicon hybrid solar cells  

E-Print Network [OSTI]

November 2005 An organic-inorganic hybrid solar cell with a p-i-n stack structure has been investigated for their potential in electronic devices such as organic light emitting diodes OLEDs , solar cells, photode- tectorsConducting polymer and hydrogenated amorphous silicon hybrid solar cells Evan L. Williams

Schiff, Eric A.

76

EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques  

E-Print Network [OSTI]

;3 Screen Printed Solar Cells · Firing the contacts ­ The furnace heats the cell to a high temperature & Metal Closeup 14 Front and Back of Screen Printed Solar Cell 15 Crystallization Furnace for Ingot1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser

Kaiser, Todd J.

77

Solar cell structure incorporating a novel single crystal silicon material  

DOE Patents [OSTI]

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

1983-01-01T23:59:59.000Z

78

Efficient light-trapping nanostructures in thin silicon solar cells  

E-Print Network [OSTI]

We examine light-trapping in thin crystalline silicon periodic nanostructures for solar cell applications. Using group theory, we show that light-trapping can be improved over a broad band when structural mirror symmetry ...

Han, Sang Eon

79

Simulation of iron impurity gettering in crystalline silicon solar cells  

E-Print Network [OSTI]

This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also ...

Powell, Douglas M. (Douglas Michael)

2012-01-01T23:59:59.000Z

80

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network [OSTI]

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Advanced cost-effective crystalline silicon solar cell technologies  

Science Journals Connector (OSTI)

An overview is given concerning current industrial technologies, near future improvements and medium-term developments in the field of industrially viable crystalline silicon terrestrial solar cell fabrication (without concentration).

J.F Nijs; J Szlufcik; J Poortmans; S Sivoththaman; R.P Mertens

2001-01-01T23:59:59.000Z

82

Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga  

E-Print Network [OSTI]

-Si have long been of fundamental interest, and amorphous silicon a-Si:H /c-Si heterojunctions are now is about the current limit achieved with a-Si:H/c-Si heterojunctions. The largest VOC we ob- tained was 0Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga and E. A. Schiff

Schiff, Eric A.

83

Japan Solar Silicon Co Ltd JSS | Open Energy Information  

Open Energy Info (EERE)

Japan Solar Silicon Co Ltd JSS Japan Solar Silicon Co Ltd JSS Jump to: navigation, search Name Japan Solar Silicon Co Ltd (JSS) Place Tokyo, Japan Sector Solar Product A JV company between Chisso, Nippon Mining Holdings, and Toho Titanium, to manufacture and retail solar-grade polysilicon. Coordinates 35.670479°, 139.740921° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":35.670479,"lon":139.740921,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

84

Silicon Valley Power - Solar Electric Buy Down Program | Department of  

Broader source: Energy.gov (indexed) [DOE]

Solar Electric Buy Down Program Solar Electric Buy Down Program Silicon Valley Power - Solar Electric Buy Down Program < Back Eligibility Commercial Residential Savings Category Solar Buying & Making Electricity Maximum Rebate Residential: $20,000 Program Info State California Program Type Utility Rebate Program Rebate Amount Incentives step down over time as installed capacity goals are met. Check program web site for current incentive level. '''Rebate levels as of 9/20/12:''' Residential: $2.00/watt AC Commercial (up to 100 kW): $1.10/watt AC Commercial (>100 kW to 1 MW): $0.15/kWh for 5 years Provider Silicon Valley Power Silicon Valley Power (SVP) offers incentives for the installation of new grid-connected solar electric (photovoltaic, or PV) systems. Incentive levels will step down over the life of the program as certain installed

85

Optical Property of Silicon Based Nanostructure and Fabrication of Silicon Nanostructure Solar Cells  

Science Journals Connector (OSTI)

Several types of silicon nanostructures have been achieved through a silver-assisted electroless etching technique. Radial p-n junction solar cells were designed and fabricated, and a...

Li, Meicheng

86

Copper doped polycrystalline silicon solar cell  

DOE Patents [OSTI]

Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

1981-01-01T23:59:59.000Z

87

CURRENT NEWS Sandwich Solar Cells May See Off Silicon  

E-Print Network [OSTI]

CURRENT NEWS Sandwich Solar Cells May See Off Silicon May 24, 2010 A new manufacturing technique of devices using GaAs chips manufactured in multilayer stacks: light sensors, high-speed transistors and solar cells. The authors also provide a detailed cost comparison. Another advantage of the multilayer

Rogers, John A.

88

E-Print Network 3.0 - amorphous silicon solar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for a research organization in the optimization of the amorphous silicon solar cell... photovoltaics on flexible substrates. Managed amorphous silicon research program...

89

E-Print Network 3.0 - amorphous-silicon-based solar cell Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer Summary: light exposure as do the amorphous silicon-based...

90

NREL Develops ZnSiP2 for Silicon-Based Tandem Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Combining an Earth-abundant chalcopyrite with a silicon layer could significantly boost conversion efficiency above that of single-junction silicon solar cells.

Not Available

2014-08-01T23:59:59.000Z

91

Solar grade silicon: Technology status and industrial trends  

Science Journals Connector (OSTI)

Abstract Crystalline silicon remains (all variants included) the dominant technology to manufacture solar cells. Currently (2012–2013) more than 90% of all solar cells produced are based on this vast group of technologies. The availability, the cost and the quality to the silicon feedstock is therefore a strategic issue of paramount importance for the entire photovoltaic sector. The silicon demand/supply balance has evolved from a situation of shortage with rocketing sales prices, in the years 2005–2008, to currently (2012–2013) an oversupply situation with record low price level for virgin polysilicon. Between these two extreme periods, production capacity has been multiplied by a factor of nearly 10. A better understanding of the prevailing dynamics in the polysilicon/silicon industry is needed in order for all players in the solar cell industry to make proper planning. In light of the past developments as well as the constraints imposed by a sound competition, the present article reviews the market trends for solar grade silicon including capacity, supply, demand and price. Furthermore, the article reviews the competing commercial technologies i.e. Siemens polysilicon, fluidized bed reactor/FBR polysilicon and upgraded metallurgical/UMG silicon and compares them in terms of maturity, improvement potential, product morphology, purity, applications and cost (actual vs. potential).

Gøran Bye; Bruno Ceccaroli

2014-01-01T23:59:59.000Z

92

Enabling Thin Silicon Solar Cell Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

cracking problem in silicon cell technology," says Budiman. "The ALS provides us with a light that allows us to measure and characterize molecular stress in a very quantitative...

93

Efficiency improvement of silicon nanostructure-based solar cells  

Science Journals Connector (OSTI)

Solar cells based on a high-efficiency silicon nanostructure (SNS) were developed using a two-step metal-assisted electroless etching (MAEE) technique, phosphorus silicate glass (PSG) doping and screen printing. This process was used to produce solar cells with a silver nitrate (AgNO3) etching solution in different concentrations. Compared to cells produced using the single MAEE technique, SNS-based solar cells produced with the two-step MAEE technique showed an increase in silicon surface coverage of ~181.1% and a decrease in reflectivity of ~144.3%. The performance of the SNS-based solar cells was found to be optimized (~11.86%) in an SNS with a length of ~300 nm, an aspect ratio of ~5, surface coverage of ~84.9% and a reflectivity of ~6.1%. The ~16.8% increase in power conversion efficiency (PCE) for the SNS-based solar cell indicates good potential for mass production.

Bohr-Ran Huang; Ying-Kan Yang; Wen-Luh Yang

2014-01-01T23:59:59.000Z

94

Development of an In-Line Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells: Annual Subcontract Report, June 2003 (Revised)  

SciTech Connect (OSTI)

Under the PV Manufacturing R&D subcontract''Development of an In-Line, Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells'', Sinton Consulting developed prototypes for several new instruments for use in the manufacture of silicon solar cells. These instruments are based on two families of R&D instruments that were previously available, an illumination vs. open-circuit-voltage technique and the quasi-steady state RF photoconductance technique for measuring minority-carrier lifetime. Compared to the previous instruments, the new prototypes are about 20 times faster per measurement, and have automated data analysis that does not require user intervention even when confronted by challenging cases. For example, un-passivated multi-crystalline wafers with large variations in lifetime and trapping behavior can be measured sequentially without error. Five instruments have been prototyped in this project to date, including a block tester for evaluating cast or HEM silicon blocks, a CZ ingot tester, an FZ boule tester for use with long-lifetime silicon, and an in-line sample head for measuring wafers. The CZ ingot tester and the FZ boule tester are already being used within industry and there is interest in the other prototypes. For each instrument, substantial R&D work was required in developing the device physics and analysis as well as for the hardware. This work has been documented in a series of application notes and conference publications, and will result in significant improvements for both the R&D and the industrial types of instruments.

Sinton, R. A.

2004-04-01T23:59:59.000Z

95

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide p-layer structure  

E-Print Network [OSTI]

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide Received 30 October 2003; accepted 18 November 2003 We investigated a double silicon-carbide p-layer structure consisting of a undiluted p-type amorphous silicon-carbide (p-a-SiC:H) window layer and a hydrogen

Kim, Yong Jung

96

Statistical equilibrium of silicon in the solar atmosphere  

E-Print Network [OSTI]

The statistical equilibrium of neutral and ionised silicon in the solar photosphere is investigated. Line formation is discussed and the solar silicon abundance determined. High-resolution solar spectra were used to determine solar $\\log gf\\epsilon_{\\rm Si}$ values by comparison with Si line synthesis based on LTE and NLTE level populations. The results will be used in a forthcoming paper for differential abundance analyses of metal-poor stars. A detailed analysis of silicon line spectra leads to setting up realistic model atoms, which are exposed to interactions in plane-parallel solar atmospheric models. The resulting departure coefficients are entered into a line-by-line analysis of the visible and near-infrared solar silicon spectrum. The statistical equilibrium of \\ion{Si}{i} turns out to depend marginally on bound-free interaction processes, both radiative and collisional. Bound-bound interaction processes do not play a significant role either, except for hydrogen collisions, which have to be chosen adequately for fitting the cores of the near-infrared lines. Except for some near-infrared lines, the NLTE influence on the abundances is weak. Taking the deviations from LTE in silicon into account, it is possible to calculate the ionisation equilibrium from neutral and ionised lines. The solar abundance based on the experimental $f$-values of Garz corrected for the Becker et al.'s measurement is $7.52 \\pm 0.05$. Combined with an extended line sample with selected NIST $f$-values, the solar abundance is $7.52 \\pm 0.06$, with a nearly perfect ionisation equilibrium of $\\Delta\\log\\epsilon_\\odot(\\ion{Si}{ii}/\\ion{Si}{i}) = -0.01$.

J. R. Shi; T. Gehren; K. Butler; L. I. Mashonkina; G. Zhao

2008-05-23T23:59:59.000Z

97

The analysis and optimization of a spherical silicon solar cell  

E-Print Network [OSTI]

THE ANALYSIS AND OPTIMIZATION OF A SPHERICAL SILICON SOLAR CELL A Thesis by William Randall McKee /'' Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE... August 1976 Ma]or Subject: Electrical Engineering THE ANALYSIS AND OPTIMIZATION OF A SPHERICAL SILICON SOLAR CELL A Thesis by William Randall McKee Approved as to style and content by: (Chai. rman of Committee) (H of D partment) (Member) 2D...

McKee, William Randall

2012-06-07T23:59:59.000Z

98

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings  

E-Print Network [OSTI]

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light ABSTRACT: Enhancing the light absorption in ultrathin-film silicon solar cells is important for improving in the back reflector. KEYWORDS: Solar cells, light trapping, antireflection, crystalline silicon, absorption

Fan, Shanhui

99

Solar EnerTech PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV | Open Energy  

Open Energy Info (EERE)

PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV Jump to: navigation, search Name Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV Place Inner Mongolia Autonomous Region, China Sector Solar Product A solar silicon processing joint venture between Solar EnerTech, PAIS, Jin Yu Silicon, and the Wuhai Municipal Government was formed. References Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV is a company located in Inner Mongolia Autonomous Region, China . References ↑ "[ Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal

100

NREL Success Stories - Quest for Inexpensive Silicon Solar Cells  

ScienceCinema (OSTI)

Scientists at the National Renewable Energy Laboratory (NREL) share their story about a successful partnership with Oak Ridge National Laboratory and the Ampulse Corporation and how support from the US Department of Energy's Technology Commercialization & Deployment Fund has helped it and their silicon solar cell research thrive.

Branz, Howard

2013-05-29T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Status, Technology and Development of Silicon Solar Cells at Iner  

Science Journals Connector (OSTI)

The current solar cells processing at INER are single crystal silicon with 1.2–2.8 ?-cm resistivity. They are thermal diffused n on p or p on n type cells with Ti/Pd/Ag metallization and Ta2O5 AR coating. Some wo...

S. S. Jao; H. H. Tseng; C. Cheng; Y. C. Tzeng…

1981-01-01T23:59:59.000Z

102

Silicon Microwire Arrays for Solar Energy-Conversion Applications  

Science Journals Connector (OSTI)

Silicon Microwire Arrays for Solar Energy-Conversion Applications ... The Si MW array geometry allows for efficient collection of photogenerated carriers from impure materials that have short minority-carrier diffusion lengths while simultaneously allowing for high optical absorption and high external quantum yields for charge-carrier collection. ...

Emily L. Warren; Harry A. Atwater; Nathan S. Lewis

2013-12-09T23:59:59.000Z

103

GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu  

Open Energy Info (EERE)

Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name GCL Solar Energy Technology Holdings (formerly GCL Silicon, aka Jiangsu Zhongneng Polysilicon) Place Xuzhou, Jiangsu Province, China Zip 221131 Sector Solar Product China-based solar grade polysilicon producer. Coordinates 34.255489°, 117.190201° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":34.255489,"lon":117.190201,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

104

Method for forming indium oxide/n-silicon heterojunction solar cells  

DOE Patents [OSTI]

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1984-03-13T23:59:59.000Z

105

Ultra-low reflection porous silicon nanowires for solar cell applications  

E-Print Network [OSTI]

Ultra-low reflection porous silicon nanowires for solar cell applications A. Najar,1, * J. Charrier aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide

Paris-Sud XI, Université de

106

Distribution of radiative crystal imperfections through a silicon ingot  

SciTech Connect (OSTI)

Crystal imperfections limit the efficiency of multicrystalline silicon solar cells. Recombination through traps is more prominent in areas with high density of crystal imperfections. A method to visualize the distribution of radiative emission from Shockley Read Hall recombination in silicon is demonstrated. We use hyperspectral photoluminescence, a fast non-destructive method, to image radiatively active recombination processes on a set of 50 wafers through a silicon block. The defect related emission lines D1 and D2 may be detected together or alone. The D3 and D4 seem to be correlated if we assume that an emission at the similar energy as D3 (VID3) is caused by a separate mechanism. The content of interstitial iron (Fe{sub i}) correlates with D4. This method yields a spectral map of the inter band gap transitions, which opens up for a new way to characterize mechanisms related to loss of efficiency for solar cells processed from the block.

Flø, A., E-mail: andreas.flo@umb.no; Burud, I.; Kvaal, K.; Olsen, E. [Norwegian University of Life Sciences, Dept. Mathematical Sciences and Technology, P.O. Box 5003, 1432 Ås (Norway)] [Norwegian University of Life Sciences, Dept. Mathematical Sciences and Technology, P.O. Box 5003, 1432 Ås (Norway); Søndenå, R. [Institute for Energy Technology, Department of Solar Energy, P.O. Box 40, 2027 Kjeller (Norway)] [Institute for Energy Technology, Department of Solar Energy, P.O. Box 40, 2027 Kjeller (Norway)

2013-11-15T23:59:59.000Z

107

The Silicon Solar Cell Turns 50  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Daryl Chapin, Calvin Fuller, and Gerald Daryl Chapin, Calvin Fuller, and Gerald Pearson likely never imagined inventing a solar cell that would revolutionize the photovoltaics industry. There wasn't even a photovoltaics industry to revolu- tionize in 1952. The three scientists were simply trying to solve problems within the Bell tele- phone system. Traditional dry cell batteries, which worked fine in mild climates, degraded too rapidly in the tropics and ceased to work when needed. The company therefore asked its famous research arm-Bell Laboratories-to explore alternative sources of freestand- ing power. Daryl Chapin got the assign- ment. At that time, his job was to test wind machines, thermoelectric gensets, and steam engines. Being a solar energy enthusiast, he suggested that the investi- gation include solar cells. His supervisor

108

High-efficiency concentrator silicon solar cells  

SciTech Connect (OSTI)

This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1990-11-01T23:59:59.000Z

109

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint  

SciTech Connect (OSTI)

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01T23:59:59.000Z

110

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell hal-00749873,version1-25Nov shortage until 2010. Research on epitaxial growth for thin film crystalline silicon solar cells has gained

111

Extended light scattering model incorporating coherence for thin-film silicon solar cells  

E-Print Network [OSTI]

Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non potential for light trapping in textured thin film silicon solar cells. VC 2011 American Institute

Lenstra, Arjen K.

112

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Kelsey A. Whitesell*a  

E-Print Network [OSTI]

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Crystals Kelsey A. Whitesell to enhance performance of thin film solar cells because of their unique ability to control light. We show for light trapping in thin film photovoltaics. Keywords: photonic crystals, defect, silicon, solar cell

Atwater, Harry

113

Light harvesting by planar photonic crystal in solar cells: The case of amorphous silicon  

E-Print Network [OSTI]

Light harvesting by planar photonic crystal in solar cells: The case of amorphous silicon Guillaume on light management in silicon thin film solar cells, using photonic crystals (PhC) structures. We by means of optical simulations performed on realistic thin film solar cell stacks. Theoretically

Boyer, Edmond

114

Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs |  

Broader source: Energy.gov (indexed) [DOE]

Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs November 2, 2010 - 2:00pm Addthis REC Silicon received a $154 million 48C tax credit for a $1.7 billion expansion of its Moses Lake, WA, plant. | Photo courtesy of REC Silicon | REC Silicon received a $154 million 48C tax credit for a $1.7 billion expansion of its Moses Lake, WA, plant. | Photo courtesy of REC Silicon | Stephen Graff Former Writer & editor for Energy Empowers, EERE In most industries, if it's expensive to make, it's probably expensive to buy. This is particularly evident in the solar world. Refining the raw material used in photovoltaic panels, silicon, is not a cheap endeavor, and has kept the price of panels more expensive than other energy sources.

115

Deutsche Solar AG formerly Bayer Solar GmbH | Open Energy Information  

Open Energy Info (EERE)

AG formerly Bayer Solar GmbH AG formerly Bayer Solar GmbH Jump to: navigation, search Name Deutsche Solar AG (formerly Bayer Solar GmbH) Place Freiberg/Sachsen, Germany Zip 9599 Sector Solar Product Producers of mono- and multicrystalline silicon wafers for solar cells. Coordinates 50.916956°, 13.339619° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":50.916956,"lon":13.339619,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

116

E-Print Network 3.0 - amorphous silicon-based solar Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

University of Toledo Collection: Renewable Energy 3 21st European Photovoltaic Solar Energy Conference (2006) DEFECT DENSITY IN SILICON HETEROJUNCTIONS Summary: voltage, V , and...

117

E-Print Network 3.0 - amorphous-silicon solar cells Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

results for: amorphous-silicon solar cells Page: << < 1 2 3 4 5 > >> 1 Institute of Energy Conversion University of Delaware Summary: modules. Consulted for a research...

118

Silicon Ink Technology Offers Path to Higher Efficiency Solar Cells at Lower Cost  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of the first liquid silicon on the market that offers a novel path to producing more efficient solar cells at lower cost.

119

Development of Black Silicon Antireflection Control and Passivation Technology for Commercial Application: Cooperative Research and Development Final Report, CRADA Number CRD-12-475  

SciTech Connect (OSTI)

The work involves the development of a commercial manufacturing process for both multicrystalline and monocrystalline solar cells that combines Natcore's patent pending passivation technology.

Yuan, H. C.

2014-06-01T23:59:59.000Z

120

And the Award Goes to... Silicon Ink Solar Technology Supported by  

Broader source: Energy.gov (indexed) [DOE]

And the Award Goes to... Silicon Ink Solar Technology Supported by And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator July 19, 2011 - 5:00pm Addthis Innovalight’s silicon ink technology | Photo courtesy of Innovalight Innovalight's silicon ink technology | Photo courtesy of Innovalight What does this mean for me? Pioneering startup Innovalight partnered with NREL to invent the first liquid silicon on the market. When paired with Innovalight's industrial screen printing process, this silicon ink technology offers a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters approach the microphone carrying a sealed envelope, a faint drum roll is heard, cameras zoom in on the anxious faces of the

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

And the Award Goes to... Silicon Ink Solar Technology Supported by  

Broader source: Energy.gov (indexed) [DOE]

And the Award Goes to... Silicon Ink Solar Technology Supported by And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator July 19, 2011 - 5:00pm Addthis Innovalight’s silicon ink technology | Photo courtesy of Innovalight Innovalight's silicon ink technology | Photo courtesy of Innovalight What does this mean for me? Pioneering startup Innovalight partnered with NREL to invent the first liquid silicon on the market. When paired with Innovalight's industrial screen printing process, this silicon ink technology offers a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters approach the microphone carrying a sealed envelope, a faint drum roll is heard, cameras zoom in on the anxious faces of the

122

Beyond Silicon: Cutting the Costs of Solar Power | U.S. DOE Office of Science (SC)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Beyond Silicon: Cutting the Costs of Solar Power Beyond Silicon: Cutting the Costs of Solar Power Stories of Discovery & Innovation Beyond Silicon: Cutting the Costs of Solar Power Enlarge Photo Courtesy of University of Illinois Mechanically flexible, high efficiency solar module that uses an interconnected array of microscale GaAs photovoltaic cells, grown in a multilayer stack on a wafer and then printed onto a sheet of plastic. Enlarge Photo 04.15.11 Beyond Silicon: Cutting the Costs of Solar Power New method of fabricating semiconductors from gallium arsenide promises more affordable solar power, improved semiconductor devices. The biggest single barrier to widespread adoption of solar power continues to be the cost of solar cells. University of Illinois materials scientists supported by the DOE Office of Science have scored a

123

Multiple EFG Silicon Ribbon Technology as the Basis for Manufacturing Low-Cost Terrestrial Solar Cells  

Science Journals Connector (OSTI)

The development of a technology for production of low-cost silicon sheet substrates for solar cells based on the EFG process has been...2) solar cells prepared from this 10 cm wide ribbon...

B. Mackintosh; J. P. Kalejs; C. T. Ho; F. V. Wald

1981-01-01T23:59:59.000Z

124

Defect Engineering, Cell Processing, and Modeling for High-Performance, Low-Cost Crystalline Silicon Photovoltaics  

SciTech Connect (OSTI)

The objective of this project is to close the efficiency gap between industrial multicrystalline silicon (mc-Si) and monocrystalline silicon solar cells, while preserving the economic advantage of low-cost, high-volume substrates inherent to mc-Si. Over the course of this project, we made significant progress toward this goal, as evidenced by the evolution in solar-cell efficiencies. While most of the benefits of university projects are diffuse in nature, several unique contributions can be traced to this project, including the development of novel characterization methods, defect-simulation tools, and novel solar-cell processing approaches mitigate the effects of iron impurities ("Impurities to Efficiency" simulator) and dislocations. In collaboration with our industrial partners, this project contributed to the development of cell processing recipes, specialty materials, and equipment that increased cell efficiencies overall (not just multicrystalline silicon). Additionally, several students and postdocs who were either partially or fully engaged in this project (as evidenced by the publication record) are currently in the PV industry, with others to follow.

Buonassisi, Tonio

2013-02-26T23:59:59.000Z

125

Advanced polycrystalline silicon thin film solar cells using high rate plasma enhanced chemical vapour deposited amorphous silicon on textured glass.  

E-Print Network [OSTI]

??Solid phase crystallized polycrystalline silicon (poly-Si) thin-film solar cell on glass is an emerging Photovoltaics (PV) technology combining the robustness of crystalline Si material with… (more)

Jin, Guangyao

2010-01-01T23:59:59.000Z

126

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION  

E-Print Network [OSTI]

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION Barbara Terheiden,1* Thomas Kunz,2 Ingo Burkert2 , Renate Horbelt,1, D-91058 Erlangen, Germany ABSTRACT: Convection assisted chemical vapor deposition (CoCVD) is applied

127

Wacker Schott Solar GmbH | Open Energy Information  

Open Energy Info (EERE)

Schott Solar GmbH Schott Solar GmbH Jump to: navigation, search Name Wacker Schott Solar GmbH Place Alzenau, Germany Sector Solar Product JV set up between Wacker Chemie and Schott Solar to produce multicrystalline silicon ingots and solar wafers. Coordinates 50.086317°, 9.073625° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":50.086317,"lon":9.073625,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

128

High efficiency silicon nanohole/organic heterojunction hybrid solar cell  

SciTech Connect (OSTI)

High efficiency hybrid solar cells are fabricated based on silicon with a nanohole (SiNH) structure and poly (3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). The SiNH structure is fabricated using electroless chemical etching with silver catalyst, and the heterojunction is formed by spin coating of PEDOT on the SiNH. The hybrid cells are optimized by varying the hole depth, and a maximum power conversion efficiency of 8.3% is achieved with a hole depth of 1??m. The SiNH hybrid solar cell exhibits a strong antireflection and light trapping property attributed to the sub-wavelength dimension of the SiNH structure.

Hong, Lei [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); Wang, Xincai; Zheng, Hongyu [Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); He, Lining; Wang, Hao; Rusli, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yu, Hongyu, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [South University of Science and Technology of China, Shenzhen (China)

2014-02-03T23:59:59.000Z

129

Electroabsorption measurements and built-in potentials in amorphous silicon pin solar cells  

E-Print Network [OSTI]

and the capacitance of such devices. We apply this technique to hydrogenated amorphous silicon a-Si:H -based solar-6951 96 04246-5 The internal electric fields of amporphous silicon a- Si:H -based p­i­n solar cells on electroluminescent organic heterostructure diodes . We con- firmed this interpretation by studying a-Si:H n

Schiff, Eric A.

130

Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demsy and Sajeev John  

E-Print Network [OSTI]

Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demésy and Sajeev by the American Institute of Physics. Related Articles Solar power conversion efficiency in modulated silicon utilizing multiple carrier generation via singlet exciton fission Appl. Phys. Lett. 101, 153507 (2012) Light

John, Sajeev

131

Solar power conversion efficiency in modulated silicon nanowire photonic Alexei Deinega and Sajeev John  

E-Print Network [OSTI]

Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinega by the American Institute of Physics. Related Articles Solar energy trapping with modulated silicon nanowire multiple carrier generation via singlet exciton fission Appl. Phys. Lett. 101, 153507 (2012) Light trapping

John, Sajeev

132

Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic crystals  

E-Print Network [OSTI]

Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic://jap.aip.org/authors #12;Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic, 60 St. George Street, Toronto, Ontario M5S 1A7, Canada (Received 25 March 2013; accepted 27 May 2013

John, Sajeev

133

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells  

Science Journals Connector (OSTI)

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells ... † Department

Martin Theuring; Peng Hui Wang; Martin Vehse; Volker Steenhoff; Karsten von Maydell; Carsten Agert; Alexandre G. Brolo

2014-09-10T23:59:59.000Z

134

One-sun, single-crystalline silicon solar cell research  

SciTech Connect (OSTI)

The point-contact solar cell design, the most efficient silicon concentrator solar cell design to date, is explored for use in one-sun applications. The necessary modifications to backside-contact concentrator cell design for operation at one-sun are explored and implemented. Large-area, point-contact solar cells were fabricated on n- and p-type substrates in low-level injection (LLI). The characteristics of these LLI cells were compared to those of four different architectures of cells with substrates in high-level injection (HLI). Both types of cell achieved open-circuit voltages over 700 mV at one-sun, LLI cells had higher fill factors, and HLI cells had substantially higher short-circuit currents. The mechanisms responsible for these observations are discussed. The high V{sub oc} and J{sub sc} of the HLI cells combine to make them more efficient than the LLI cells, with efficiencies measured at Sandia up to 22.7% for a 37.5-cm{sup 2} cell at one sun. This is the highest one-sun efficiency for a silicon cell larger than 4 cm{sup 2}. Simplified, backside-contact solar cell processes were also developed, which have nearly 100% yield. Over 80 such cells, each with a 35-cm{sup 2} area or greater, were delivered to Sandia. Cells made with these simplified processes had efficiencies up to 21.3% for a 37.5-cm{sup 2} cell. The recombination properties of Si{sub 3}N{sub 4} layers over SiO{sub 2} were characterized, since Si{sub 3}N{sub 4} is an excellent antireflection coating for cells laminated under glass. Several prototype flat-plate modules of backside-contact cells were built, with up to 24 cells and efficiencies up to 19%. 26 refs., 16 figs., 4 tabs.

King, R.R.; Sinton, R.A.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1991-06-01T23:59:59.000Z

135

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents [OSTI]

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

1998-06-16T23:59:59.000Z

136

Exciton splitting and carrier transport across the amorphous-silicon/ polymer solar cell interface  

E-Print Network [OSTI]

of bilayer hybrid solar cells to better understand the physics controlling organic-inorganic device of Physics. DOI: 10.1063/1.2408641 Hybrid organic-inorganic solar cells combine the pro- cessabilityExciton splitting and carrier transport across the amorphous-silicon/ polymer solar cell interface

McGehee, Michael

137

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell #12;2 1. Introduction: martin.labrune@polytechnique.edu ABSTRACT We report on heterojunction solar cells whose thin intrinsic

138

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell  

E-Print Network [OSTI]

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic­4]. In this context, a basic idea is to periodically texture the metallic back reflector of a thin-film solar cell

139

21.9% efficient silicon bifacial solar cells  

SciTech Connect (OSTI)

This paper reports the efficiency of bifacial silicon solar cells and mini-modules fabricated at SunPower Corp. The best cell has AM1.5G front efficiency of 21.9% and rear efficiency of 13.9%. The mini-modules, each containing 20 bifacial cells, attain efficiency as high as the average efficiency of their individual cells. The best module has AM1.5G front efficiency of 20.66% and rear efficiency of 10.54%. Optical properties of the bifacial cells have also been measured and analyzed. The results show that bifacial cells, compared to monofacial cells, absorb less infrared light and thus they can operate at lower temperature in space.

Zhou, C.Z.; Verlinden, P.J.; Crane, R.A.; Swanson, R.M. [SunPower Corp., Sunnyvale, CA (United States); Sinton, R.A. [Sinton Consulting, San Jose, CA (United States)

1997-12-31T23:59:59.000Z

140

Metal catalyst technique for texturing silicon solar cells  

DOE Patents [OSTI]

Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.

Ruby, Douglas S. (Albuquerque, NM); Zaidi, Saleem H. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Silicon Nanoparticle Synthesis and Modeling for Thin Film Solar Cells.  

E-Print Network [OSTI]

??Nanometer-scale silicon shows extraordinary electronic and optical properties that are not available for bulk silicon, and many investigations toward applications in optoelectronic devices are being… (more)

Albu, Zahra

2014-01-01T23:59:59.000Z

142

Solar Grade Silicon from Agricultural By-products  

SciTech Connect (OSTI)

In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it starts one step upstream from all other Sipv production efforts. Our process starts by producing high purity SiO2/C feedstocks from which Sipv can be produced in a single, chlorine free, final EAF step. Specifically, our unique technology, and the resultant SiO2/C product can serve as high purity feedstocks to existing metallurgical silicon (Simet) producers, allowing them to generate Sipv with existing US manufacturing infrastructure, reducing the overall capital and commissioning schedule. Our low energy, low CAPEX and OPEX process purifies the silica and carbon present in rice hull ash (RHA) at low temperatures (< 200C) to produce high purity (5-6 Ns) feedstock for production of Sipv using furnaces similar to those used to produce Simet. During the course of this project we partnered with Wadham Energy LP (Wadham), who burns 220k ton of rice hulls (RH)/yr generating 200 GWh of electricity/yr and >30k ton/yr RHA. The power generation step produces much more energy (42 kWh/kg of final silicon produced) than required to purify the RHA (5 kWh/kg of Sipv, compared to 65 kWh/kg noted above. Biogenic silica offers three very important foundations for producing high purity silicon. First, wastes from silica accumulating plants, such as rice, corn, many grasses, algae and grains, contain very reactive, amorphous silica from which impurities are easily removed. Second, plants take up only a limited set of, and minimal quantities of the heavy metals present in nature, meaning fewer minerals must be removed. Third, biomass combustion generates a product with intrinsic residual carbon, mixed at nanometer length scales with the SiO2. RHA is 80-90 wt% high surface area (20 m2/g), amorphous SiO2 with some simple mineral content mixed intimately with 5-15 wt% carbon. The mineral content is easily removed by low cost, acid washes using Mayaterials IP, leading to purified rice hull ash (RHAclean) at up to 6N purity. This highly reactive silica is partially extracted from RHAclean at 200 C in an environmentally benign process to adjust SiO2:C ratios to those needed in EA

Richard M. Laine

2012-08-20T23:59:59.000Z

143

Two-Dimensional Numerical Simulations of High Efficiency Silicon Solar Cells  

Science Journals Connector (OSTI)

This paper presents for the first time the use of two-dimensional (2D) device simulation for optimising design parameters of high-efficiency silicon solar cells of practical dimensions. We examine the...

G. Heiser; A. G. Aberle; S. R. Wenham…

1993-01-01T23:59:59.000Z

144

Effect of liquid dielectrics on the efficiency of silicon solar cells  

Science Journals Connector (OSTI)

The results of experimental studies of the change in the photoelectric characteristics of silicon solar cells produced as a result of depositing ... open-circuit voltage, and significantly increases the efficiency

Yu. A. Abramyan; G. G. Karamyan; A. A. Murodyan; V. I. Stafeev…

1999-12-01T23:59:59.000Z

145

Co-optimizing silicon solar cell processing for efficiency and throughput  

E-Print Network [OSTI]

Crystalline silicon solar cells are a proven renewable energy technology, but they have yet to reach low costs commensurate with subsidy-free, grid-scale adoption. To achieve the widespread adoption of photovoltaics, the ...

Morishige, Ashley E. (Ashley Elizabeth)

2013-01-01T23:59:59.000Z

146

Optical losses in amorphous silicon solar cells due to back reflectors  

SciTech Connect (OSTI)

The authors have used a new numerical model and here present initial results on how texturing and backreflectors affect the maximum achievable short-circuit current densities in amorphous silicon solar cells.

Sopori, B.L.; Madjdpour, J.; Von Roedern, B.; Chen, W.; Hegedus, S.S.

1997-07-01T23:59:59.000Z

147

Efficient Light Trapping in Inverted Nanopyramid Thin Crystalline Silicon Membranes for Solar Cell Applications  

E-Print Network [OSTI]

Thin-film crystalline silicon (c-Si) solar cells with light-trapping structures can enhance light absorption within the semiconductor absorber layer and reduce material usage. Here we demonstrate that an inverted nanopyramid ...

Mavrokefalos, Anastassios

148

Technology and Design of Classical and Heterojunction Back Contacted Silicon Solar Cells  

Science Journals Connector (OSTI)

Ever since the first proposal of Interdigitated Back Contact (IBC) silicon solar cells in 1975, this type of cell has been under development as a means to reach high energy conversion efficiencies. Since no me...

Niels E. Posthuma; Barry J. O’Sullivan…

2012-01-01T23:59:59.000Z

149

P+N N+ and Pin Low Cost Silicon Solar Cell Technology  

Science Journals Connector (OSTI)

The results of a study which has as its main goal the fabrication of silicon solar cell panels using only the most simple techniques is presented. Spin-on diffusion sources were used to form the junctions, whi...

O. Leistiko; Y. Safir; W. G. Proctor

1987-01-01T23:59:59.000Z

150

Cost-Effective Porous Silicon Technology For Solar Cell Industrial Applications  

Science Journals Connector (OSTI)

For porous silicon (PS) layer preparation, only the electrochemical method of DC- anodizing in HF-based electrolytes and the chemical method using HF/HNO3 electrolytes are widely used. In solar cell applications,...

V. Yerokhov; M. Lipinski; A. Mylyanych…

2002-01-01T23:59:59.000Z

151

Polycrystalline silicon thin-film solar cells on glass by ion-assisted deposition.  

E-Print Network [OSTI]

??Polycrystalline silicon (pc-Si, grain size > 1??m, no amorphous tissue) on glass is an interesting material for thin-film solar cells due to the low costs,… (more)

Straub, Axel

2005-01-01T23:59:59.000Z

152

Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint  

SciTech Connect (OSTI)

We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer.

Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q.; Branz, H. M.; Meier, D. L.

2008-05-01T23:59:59.000Z

153

Present Status and Future Prospects of Silicon Solar Cell Arrays and Systems  

Science Journals Connector (OSTI)

...research-article Present Status and Future Prospects of Silicon Solar Cell Arrays and Systems H. Durand The first part of this paper...present state of the art of the single crystal silicon cell industry: production volume, cost breakdown and main...

1980-01-01T23:59:59.000Z

154

PROCEEDINGS O F THE IEEE, VOL.56, NO. 1, JANUARY196837 [`I J. J. Wysocki,"Lithium-doped radiation-resistant silicon solar  

E-Print Network [OSTI]

,"Lithium-doped radiation-resistant silicon solar cells," IEEE Trans. Nuclear Science. vol.NS-13, pp. 168-173, December 1966 damagein semiconductorsXI1: Effects ofhighenergy electrons in silicon and silicon solar cells," Contract NAS 5-3805, May 25, 1966. 14] R. V. Tauke, "Thermal annealing of irradiated n-on-p silicon solar cells

Teich, Malvin C.

155

(Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor-and solar-  

E-Print Network [OSTI]

Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor- and solar- grade and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips%; Venezuela, 15%; Canada, 8%; and other, 8%. Silicon metal: Brazil, 38%; South Africa, 24%; Canada, 16

156

Mapping boron in silicon solar cells using electron energy-loss spectroscopy  

E-Print Network [OSTI]

Mapping boron in silicon solar cells using electron energy-loss spectroscopy M Duchamp1 , C B of Denmark, DK-2800 Kongens Lyngby, Denmark 2 Centro Atómico Bariloche, AR-8400 S. C. de Bariloche, Argentina 3 ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten, The Netherlands 4 CEA-Leti, MINATEC Campus, 17

Dunin-Borkowski, Rafal E.

157

Nanoscale photon management in silicon solar cells Sangmoo Jeong, Shuang Wang, and Yi Cui  

E-Print Network [OSTI]

benefits. For power generation, low-cost fossil fuel has, however, been pre- ferred to renewable energy and wind, can be accessed easily in most of the world. In particular, the solar energy deliveredNanoscale photon management in silicon solar cells Sangmoo Jeong, Shuang Wang, and Yi Cui Citation

Cui, Yi

158

Atomic Structure of Interface States in Silicon Heterojunction Solar Cells B. M. George,1  

E-Print Network [OSTI]

silicon (a-Si:H=c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic identify the microscopic origin of the conduction band tail state in the a-Si:H layer, and (iv) present-efficiency solar cells, is formed at the a-Si: H=c-Si interface [8]. Here, similar to other crystalline- amorphous

Schmidt, Wolf Gero

159

High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells  

E-Print Network [OSTI]

. Figure 3-1 IV curve of a UT fabricated triple cell, showing 12.7% initial, active-area efficiency. Figure1 High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells PHASE I Annual-junction a-Si Solar Cells with Heavily Doped Thin Interface Layers at the Tunnel Junctions Section 4 High

Deng, Xunming

160

Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar  

E-Print Network [OSTI]

1 Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar Cell Decorated_yang@berkeley.edu. #12;2 Fabrication of the suspended single-nanowire solar cells Trench substrates were fabricated from of a quartz tube in a tube furnace. Reactions to grow wires bridging the trenches lasted from 15 to 45 mins

Yang, Peidong

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Core-shell silicon nanowire solar cells M. M. Adachi1,2  

E-Print Network [OSTI]

Core-shell silicon nanowire solar cells M. M. Adachi1,2 , M. P. Anantram3 & K. S. Karim1,2 1 of Waterloo, Waterloo, Ontario N2L 3G1, Canada, 3 Department of Electrical Engineering, University and reduce radial carrier collection distances in solar cell devices. Arrays of disordered nanowires grown

Anantram, M. P.

162

Silicon heterojunction solar cell with passivated hole selective MoO{sub x} contact  

SciTech Connect (OSTI)

We explore substoichiometric molybdenum trioxide (MoO{sub x}, x?silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711?mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO{sub x}, we observe a substantial gain in photocurrent of 1.9?mA/cm{sup 2} in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

Battaglia, Corsin; Yin, Xingtian; Zheng, Maxwell; Javey, Ali, E-mail: ajavey@eecs.berkeley.edu [Electrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Martín de Nicolás, Silvia; De Wolf, Stefaan; Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne, 2000 Neuchâtel (Switzerland)

2014-03-17T23:59:59.000Z

163

Device physics and characterization of silicon point-contact solar cells  

SciTech Connect (OSTI)

The silicon point-contact solar cell is a candidate solar cell for use in highly concentrated sunlight. Recent progress is described for a point-contact solar cell optimized for incident power densities of 36 Watts/cm/sup 2/. The design and fabrication for several device runs is discussed in detail. Extensive data from these solar cells is presented in order to display the major trends in device design and performance. The data culminate in a solar cell that is 28% efficient for incident power densities between 4 and 15 watts/cm/sup 2/ at 25/sup 0/C. Utilizing measurements from several runs of solar cells, a three-dimensional model is compared to the data in order to establish a strong baseline case from which future design enhancements can be evaluated. A modeling study of the optimum geometries for point-contact solar cells provides the context for a discussion of the device physics of the solar-cell operation. These studies indicate that efficiencies exceeding 30% may soon be attained. The ultimate efficiency of silicon solar cells will be limited parasitic Auger recombination. With the model, a device is optimized to measure the carrier lifetimes in highly-injected silicon in the carrier density range of interest for solar cell operation, 1 X 10/sup 15/ to 2 x 10/sup 17/ carriers/cm/sup 2/.

Sinton, R.A.

1987-01-01T23:59:59.000Z

164

A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells  

Science Journals Connector (OSTI)

Incorporation of nanostructures is a recent trend in the photovoltaic community, aimed at improving light absorption and consequently cell efficiency. In this regard, semiconductor nanowires provide an attractive research platform for a new generation of cost-effective and efficient solar cells. Thanks to their unique geometry, silicon nanowires enhance light trapping and anti-reflection effects by means of multiple scattering between individual nanowires, and by coupling the light into confined eigenmodes over a broad range of the solar spectrum. Moreover, radial junction solar cells built around nanowires decouple the light absorption and carrier collection directions, which allows for a higher internal field and better carrier collection. Thus, arrays of radial junction solar cells bring advantages of high efficiency with reduced material amount. This is particularly attractive for devices based on hydrogenated amorphous and microcrystalline silicon thin films. In this paper, after reviewing different approaches to fabricate silicon nanowires, we focus on nanowires grown using the plasma-assisted vapour–liquid–solid method because of the simplicity and compatibility with current silicon thin-film technology. Their application to a-Si?:?H based radial junction solar cells has already resulted in ~8% of stable devices with an absorber layer thickness of only 100 nm. Moreover, current challenges and perspectives such as the use of a microcrystalline silicon absorber are also reviewed.

Soumyadeep Misra; Linwei Yu; Wanghua Chen; Martin Foldyna; Pere Roca i Cabarrocas

2014-01-01T23:59:59.000Z

165

Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells  

Science Journals Connector (OSTI)

Abstract We report on physical properties of microcrystalline silicon-germanium (?c-SiGe:H) absorber layers for the use as a bottom structure in silicon based multijunction thin-film solar cells. Due to incorporation of Ge the absorption of the film is enhanced compared to pure ?c-Si:H films. This provides the opportunity to significantly reduce the absorber layer thickness. The experiments were carried out in a 13.56 MHz PECVD reactor using germane, silane and hydrogen as process gases. Single layers were characterized for their optical and electrical properties. Results from single and multijunction solar cells using a ?c- SiGe:H absorbers will be shown. In tandem solar cells a reduction of about 60% of the absorber layer thickness could be reached by using SiGe alloys compared to pristine silicon tandem cells.

K.V. Maydell; K. Grunewald; M. Kellermann; O. Sergeev; P. Klement; N. Reininghaus; T. Kilper

2014-01-01T23:59:59.000Z

166

Fundamental understanding and development of low-cost, high-efficiency silicon solar cells  

SciTech Connect (OSTI)

The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

2000-05-01T23:59:59.000Z

167

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010  

SciTech Connect (OSTI)

In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Kumar, A.; Ravi, K. V.

2011-06-01T23:59:59.000Z

168

Alternative technology used to manufacture semitransparent monocrystalline silicon solar cells  

Science Journals Connector (OSTI)

This paper presents the manufacturing technology of a new semitransparent solar cell that can be used for building integrated ... anisotropic etching. The efficiency of the semitransparent solar cell is 6.12 % in...

Enik? Bándy; Márta Rencz

2013-06-01T23:59:59.000Z

169

Silicon Ink Technology Offers Path to Higher Efficiency Solar...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

startup companies cross technological barriers to commercialization while encouraging private investment. The Solar Energy Technologies Office (SETO) focuses on achieving the...

170

Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,,  

E-Print Network [OSTI]

Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,, Xingtian Yin,,,§, Maxwell, University of California, Berkeley, California 94720, United States Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States § Electronic Materials Research

Javey, Ali

171

Siliconized Triarylamines As Redox Mediator in Dye-Sensitized Solar Cells  

Science Journals Connector (OSTI)

Siliconized Triarylamines As Redox Mediator in Dye-Sensitized Solar Cells ... We thank the Canadian Foundation for Innovation (CFI) and the Natural Sciences and Engineering Research Council of Canada (NSERC), York University (S.M.), and University of Toronto (T.P.B.) for their financial support. ...

Ali Sepehrifard; Brett A. Kamino; Timothy P. Bender; Sylvie Morin

2012-10-31T23:59:59.000Z

172

Exclusively Thermal Donor-doped Cz Wafers for Silicon Heterojunction Solar Cell Technology  

Science Journals Connector (OSTI)

Abstract In this paper, a first evaluation of the compatibility between thermal donor-doped Czochralski silicon and the hydrogenated amorphous Silicon/crystalline Silicon heterojunction technology, is presented. The wafers resistivity was adjusted thanks to the controlled thermal donors generation through 450 °C anneals of calculated durations, following a model detailed in this paper. Minority carrier lifetimes higher than 2 milliseconds, matching the requirements of the heterojunction technology used, were demonstrated. The solar cells were manufactured and efficiencies comparable to cells based on “high quality” Float-Zone substrates were obtained. The stability of the solar cells performances under illumination and temperature was also assessed, and revealed no degradation of the bulk quality even after prolonged illumination.

Frédéric Jay; Jordi Veirman; Nora Najid; Delfina Muñoz; Sébastien Dubois; Anis Jouini

2014-01-01T23:59:59.000Z

173

Transmissive metallic contact for amorphous silicon solar cells  

DOE Patents [OSTI]

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Madan, A.

1984-11-29T23:59:59.000Z

174

Mass production of high efficiency selective emitter crystalline silicon solar cells employing phosphorus ink technology  

Science Journals Connector (OSTI)

Abstract Phosphorus ink technology has been demonstrated as a simple and cheap method to realize selective emitter (SE) crystalline silicon solar cells through mass production in a professional photovoltaic company. We have achieved an average conversion efficiency (?) of 19.01% with peak ? of 19.27% for the SE solar cells based on commercial-grade p-type silicon substrate, much higher than that of the homogeneous emitter counterparts whose average ? is 18.56%. The standard deviation of the performance for these SE solar cells is also smaller, indicating better repeatability of the phosphorus ink SE technology. Moreover, the SE silicon solar cells can well adapt to various Ag pastes while preserving high cell performance, which offers an opportunity to choose a cheap Ag paste as front metallization material. With the aid of PC1D, we have shown that the ? of the SE solar cells can be further improved as the sheet resistance in the illuminated area increases from the present value of 70 to 120 ?/?.

Sihua Zhong; Wenzhong Shen; Feng Liu; Xiang Li

2013-01-01T23:59:59.000Z

175

Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon  

SciTech Connect (OSTI)

We report an enhanced conversion efficiency of femtosecond-laser treated silicon solar cells by surface modification of anisotropic-etching. The etching improves minority carrier lifetime inside modified black silicon area substantially; moreover, after the etching, an inverted pyramids/upright pyramids mixed texture surface is obtained, which shows better photon capturing capability than that of conventional pyramid texture. Combing of these two merits, the reformed solar cells show higher conversion efficiency than that of conventional pyramid textured cells. This work presents a way for fabricating high performance silicon solar cells, which can be easily applied to mass-production.

Chen, H. Y.; Peng, Y., E-mail: gdyuan@semi.ac.cn, E-mail: py@usst.edu.cn; Hong, M.; Zhang, Y. B.; Cai, Bin; Zhu, Y. M. [Shanghai Key Lab of Modern Optical System and Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai 200093 (China); Yuan, G. D., E-mail: gdyuan@semi.ac.cn, E-mail: py@usst.edu.cn; Zhang, Y.; Liu, Z. Q.; Wang, J. X.; Li, J. M. [Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-05-12T23:59:59.000Z

176

Solar energy: A new day dawning?: Silicon Valley sunrise  

Science Journals Connector (OSTI)

... The Sun provides Earth with as much energy every hour as human civilization uses every year. If you are a ... every hour as human civilization uses every year. If you are a solar- ...

Oliver Morton

2006-09-06T23:59:59.000Z

177

New Wire Silicon Slicing Technology for Solar Cell  

Science Journals Connector (OSTI)

Firstly a prototype machine using Multicutting wire technology (MCWT) is described. The influence of ... and damaged layer are suitable for the present solar cell technology. Further decreasing cost steps are com...

H. Lauvray; A. Talpied; J. P. Besselere

1981-01-01T23:59:59.000Z

178

Purifying metallurgical silicon to solar grade silicon by metal-assisted chemical etching  

Science Journals Connector (OSTI)

Metal impurities have detrimental effects on the performance of Si solar cells. Through metal assisted chemical etching, we fabricate Si nanowires from metallurgical Si while purifying...

Li, Xiaopeng; Sprafke, Alexander N; Schweizer, Stefan L; Wehrspohn, Ralf

179

Rapid Thermal Processing of High Efficiency n-Type Silicon Solar Cells with Al Back Junction  

SciTech Connect (OSTI)

In this paper we report on the design, fabrication and modeling of 49 cm{sup 2}, 200-{micro}m thick, 1-5 {Omega}-cm, n- and p-type <111> and <100> screen-printed silicon solar cells. A simple process involving RTP front surface phosphorus diffusion, low frequency PECVD silicon nitride deposition, screen-printing of Al metal and Ag front grid followed by co-firing of front and back contacts produced cell efficiencies of 15.4% on n-type <111> Si, 15.1% on n-type <100> Si, 15.8% on p-type <111> Si and 16.1% on p-type <100> Si. Open circuit voltage was comparable for n and p type cells and was also independent of wafer orientation. High fill factor values (0.771-0.783) for all the devices ruled out appreciable shunting which has been a problem for the development of co-fired n-type <100> silicon solar cells with Al back junction. Model calculations were performed using PC1D to support the experimental results and provide guidelines for achieving >17% n-type silicon solar cells by rapid firing of Al back junction.

Ebong, A.; Upadhyaya, V.; Rounsaville, B.; Kim, D. S.; Meemongkolkiat, V.; Rohatgi, A.; Al-Jassim, M. M.; Jones, K. M.; To, B.

2006-01-01T23:59:59.000Z

180

14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Summary of Discussion Sessions  

SciTech Connect (OSTI)

The 14th Workshop discussion sessions addressed funding needs for Si research and for R&D to enhance U.S. PV manufacturing. The wrap-up session specifically addressed topics for the new university silicon program. The theme of the workshop, Crystalline Silicon Solar Cells: Leapfrogging the Barriers, was selected to reflect the astounding progress in Si PV technology during last three decades, despite a host of barriers and bottlenecks. A combination of oral, poster, and discussion sessions addressed recent advances in crystal growth technology, new cell structures and doping methods, silicon feedstock issues, hydrogen passivation and fire through metallization, and module issues/reliability. The following oral/discussion sessions were conducted: (1) Technology Update; (2) Defects and Impurities in Si/Discussion; (3) Rump Session; (4) Module Issues and Reliability/Discussion; (5) Silicon Feedstock/Discussion; (6) Novel Doping, Cells, and Hetero-Structure Designs/Discussion; (7) Metallization/Silicon Nitride Processing/Discussion; (8) Hydrogen Passivation/Discussion; (9) Characterization/Discussion; and (10) Wrap-Up. This year's workshop lasted three and a half days and, for the first time, included a session on Si modules. A rump session was held on the evening of August 8, which addressed efficiency expectations and challenges of c Si solar cells/modules. Richard King of DOE and Daren Dance of Wright Williams& Kelly (formerly of Sematech) spoke at two of the luncheon sessions. Eleven students received Graduate Student Awards from funds contributed by the PV industry.

Sopori, B.; Tan, T.; Sinton, R.; Swanson, D.

2004-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Silicon-based hybrid cell for harvesting solar energy and raindrop electrostatic energy  

Science Journals Connector (OSTI)

Abstract Silicon-based solar cell is by far the most established solar cell technology. The surface of a Si solar cell is usually covered by a layer of transparent material to protect the device from environmental damages/corrosions. Here, we replaced this protection layer by a transparent triboelectric nanogeneartor (TENG), for simultaneously or individually harvesting solar and raindrop energy when either or both of them are available in our living environment. The TENG is made of a specially processed polytetrafluoroethylene (PTFE) film, an indium tin oxide (ITO) and a polyethylene terephthalate (PET) layer. Under solar light irradiation (12 W/m2) in a rainy day, the fabricated high-efficiency solar cell provides an open-circuit (Voc) of 0.43 V and short-circuit current density (Jsc) of 4.2 A/m2. And the TENG designed for collection of raindrop energy gives an AC Voc of 30 V and Jsc of 4.2 mA/m2 when impacted by water drops at a dripping rate of 0.116 ml/s. In rainy days, the performance of solar cell decreased greatly, while TENG can be a good compensation as for green energy harvesting. From these results, we can see that the hybrid cell formed by a solar cell and a water-drop TENG have great potential for simultaneously/individually harvesting both solar energy and raindrop electrostatic energy under different weather conditions, especially in raining season.

Li Zheng; Zong-Hong Lin; Gang Cheng; Wenzhuo Wu; Xiaonan Wen; Sangmin Lee; Zhong Lin Wang

2014-01-01T23:59:59.000Z

182

The influence of passivation and photovoltaic properties of ?-Si:H coverage on silicon nanowire array solar cells  

Science Journals Connector (OSTI)

Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (V oc

KunTang Li; XiuQin Wang; PengFei Lu; JianNing Ding…

2013-09-01T23:59:59.000Z

183

The use of laser technology to shape properties of the contacts of silicon solar cells and their structure  

Science Journals Connector (OSTI)

The paper presents the results of the investigation of the front contact manufactured using silver pastes (based on experimentally prepared silver powder) on monocrystalline silicon solar cells in order to red...

Ma?gorzata Musztyfaga-Staszuk; Leszek A. Dobrza?ski

2014-12-01T23:59:59.000Z

184

Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells  

E-Print Network [OSTI]

Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

Sheng, Xing

185

Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells  

E-Print Network [OSTI]

the optical absorption length.10 This design has the potential to enable energy-conversion efficiencies near growth catalysts such as Cu.11 To obtain optimal energy-conversion efficiencies for solar cells based minority carrier diffusion lengths of 2 µm. Assuming bulk-dominated recombination, this value corresponds

Atwater, Harry

186

Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes; Summary Discussion Sessions  

SciTech Connect (OSTI)

This report is a summary of the panel discussions included with the Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme of the workshop was ''Supporting the Transition to World Class Manufacturing.'' This workshop provided a forum for an informal exchange of information between researchers in the photovoltaic and nonphotovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helped establish a knowledge base that can be used for improving device-fabrication processes to enhance solar-cell performance and reduce cell costs. It also provided an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research.

Sopori, B.; Swanson, D.; Sinton, R.; Stavola, M.; Tan, T.

1998-12-08T23:59:59.000Z

187

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon  

DOE Patents [OSTI]

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Kaschmitter, J.L.; Sigmon, T.W.

1995-10-10T23:59:59.000Z

188

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon  

DOE Patents [OSTI]

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Kaschmitter, James L. (Pleasanton, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

189

Multi-Layer Inkjet Printed Contacts for Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.

Curtis, C. J.; van hest, M.; Miedaner, A.; Kaydanova, T.; Smith, L.; Ginley, D. S.

2006-05-01T23:59:59.000Z

190

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process  

DOE Patents [OSTI]

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

Ruby, Douglas S. (Albuquerque, NM); Schubert, William K. (Albuquerque, NM); Gee, James M. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

191

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process  

DOE Patents [OSTI]

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas. 5 figs.

Ruby, D.S.; Schubert, W.K.; Gee, J.M.

1999-02-16T23:59:59.000Z

192

Light Trapping for Thin Silicon Solar Cells by Femtosecond Laser Texturing: Preprint  

SciTech Connect (OSTI)

Femtosecond laser texturing is used to create nano- to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 um thick. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit.

Lee, B. G.; Lin, Y. T.; Sher, M. J.; Mazur, E.; Branz, H. M.

2012-06-01T23:59:59.000Z

193

Improved amorphous silicon alloy solar cells for module fabrication  

SciTech Connect (OSTI)

An initial conversion efficiency of 13.5% has been obtained on a triple-junction triple-bandgap device fabricated in a large-area deposition reactor capable of producing one-square-foot modules. The intrinsic layer of the top cell is a wide bandgap amorphous silicon alloy. The middle and bottom cells employ high quality amorphous silicon-germanium alloy. The high efficiency of the triple-junction cell is attributed to the relative reduction of the optical loss in the top tunnel junction and the improvement in the quality of the middle and bottom component cells. Triple-junction devices with initial efficiency of 13.3% have shown saturation at 11.6% after light soaking. Modules of aperture area 909 cm{sup 2} have been fabricated using an assembly process similar to the one being currently used in their manufacturing line. The module design consists of one large-area, high-current monolithic multijunction device. The status of the small-area devices and modules is described.

Banerjee, A.; Yang, J.; Guha, S.

1997-07-01T23:59:59.000Z

194

Received 13 May 2013 | Accepted 18 Nov 2013 | Published 16 Dec 2013 All-back-contact ultra-thin silicon nanocone solar  

E-Print Network [OSTI]

. In particular, a silicon (Si) solar cell is still the mainstream technology in industry, and it has witnessed-thin silicon nanocone solar cells with 13.7% power conversion efficiency Sangmoo Jeong1, Michael D. McGehee2 & Yi Cui2,3 Thinner Si solar cells with higher efficiency can make a Si photovoltaic system a cost

Cui, Yi

195

Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate  

E-Print Network [OSTI]

Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light://jap.aip.org/about/rights_and_permissions #12;Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light require light-trapping schemes that are predominantly based on depositing the solar cells on rough

Psaltis, Demetri

196

Low temperature front surface passivation of interdigitated back contact silicon heterojunction solar cell  

SciTech Connect (OSTI)

The interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell requires a low temperature front surface passivation/anti-reflection structure. Conventional silicon surface passivation using SiO2 or a-SiNx is performed at temperature higher than 400°C, which is not suitable for the IBC-SHJ cell. In this paper, we propose a PECVD a-Si:H/a-SiNx:H/a-SiC:H stack structure to passivate the front surface of crystalline silicon at low temperature. The optical properties and passivation quality of this structure are characterized and solar cells using this structure are fabricated. With 2 nm a-Si:H layer, the stack structure exhibits stable passivation with effective minority carrier lifetime higher than 2 ms, and compatible with IBC-SHJ solar cell processing. A critical advantage of this structure is that the SiC allows it to be HF resistant, thus it can be deposited as the first step in the process. This protects the a-Si/c-Si interface and maintains a low surface recombination velocity.

Shu, Brent; Das, Ujjwal; Jani, Omkar; Hegedus, Steve; Birkmire, Robert

2009-06-08T23:59:59.000Z

197

Phase 2 of the array automated assembly task for the low cost silicon solar array project. Final report  

SciTech Connect (OSTI)

Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process proposed by Motorola, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work has directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The Motorola process was compared with simple electroless nickel plating in a series of parallel experiments. Results are presented. (WHK)

Petersen, R.C.

1980-11-01T23:59:59.000Z

198

Remarkable progress in thin-film silicon solar cells using high-efficiency triple-junction technology  

Science Journals Connector (OSTI)

Abstract Despite the many advantages of thin-film silicon (Si) solar cells, their low efficiencies remain a challenge that must be overcome. Efficient light utilization across the solar spectrum is required to achieve efficiencies over 15%, allowing them to be competitive with other solar cell technologies. To produce high-efficiency thin-film Si solar cells, we have developed triple-junction solar cell structures to enhance solar spectrum utilization. To maximize the light management, in-house ZnO:Al layers with high haze ratios and high transmittances were developed. In addition, novel doping layers, such as n-type microcrystalline silicon oxide (µc-SiOx:H), which has a very low refractive index, and p-type microcrystalline silicon oxide (µc-SiOx:H), which has a wide bandgap, were successfully applied to the optical reflector and the window layer, respectively. Thin-film quality control techniques for the deposition of hydrogenated amorphous silicon (a-Si:H) in the top cell, hydrogenated amorphous silicon-germanium (a-SiGe:H) or hydrogenated microcrystalline silicon (?c-Si:H) in the middle cell, and hydrogenated microcrystalline silicon (?c-Si:H) in the bottom cell were also important factors leading to the production of high-efficiency triple-junction solar cells. As a result of this work, an initial efficiency of 16.1% (in-house measurement) in the a-Si:H/a-SiGe:H/?c-Si:H stack and a stabilized efficiency of 13.4% (confirmed by NREL) in the a-Si:H/?c-Si:H/?c-Si:H stack were successfully achieved in a small-area triple-junction solar cell with dimensions of 1 cm×1 cm.

Soohyun Kim; Jin-Won Chung; Hyun Lee; Jinhee Park; Younho Heo; Heon-Min Lee

2013-01-01T23:59:59.000Z

199

CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE-PASSIVATED SCREEN-PRINTED ALUMINUM-ALLOYED REAR EMITTER  

E-Print Network [OSTI]

THE ALU+ CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE- PASSIVATED SCREEN-PRINTED ALUMINUM stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n + np + solar cell structure, the so-called ALU + cell. An independently confirmed

200

Review of Back Contact Silicon Solar Cells for Low-Cost Application  

SciTech Connect (OSTI)

Back contact solar cells hold significant promise for increased performance in photovoltaics for the near future. Two major advantages which these cells possess are a lack of grid shading loss and coplanar interconnection. Front contacted cells can have up to 10% shading loss when using screen printed metal grids. A front contact cell must also use solder connections which run from the front of one cell to the back of the next for series interconnection. This procedure is more difficult to automate than the case of co-planar contacts. The back contact cell design is not a recent concept. The earliest silicon solar cell developed by Bell Labs was a back contact device. There have been many design modifications to the basic concept over the years. To name a few, there is the Interdigitated Back Contact (IBC) cell, the Stanford Point contact solar cell, the Emitter Wrap Through (EWT), and its many variations. A number of these design concepts have demonstrated high efficiency. The SunPower back contact solar cell holds the efficiency record for silicon concentrator cells. The challenge is to produce a high efficiency cell at low cost using high throughput techniques. This has yet to be achieved with a back contact cell design. The focus of this paper will be to review the relevant features of back contact cells and progress made toward the goal of a low cost version of this device.

Smith, David D.

1999-08-04T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Solar-Grade Silicon from Metallurgical-Grade Silicon Via Iodine Chemical Vapor Transport Purification: Preprint  

SciTech Connect (OSTI)

This conference paper describes the atmospheric-pressure in an ''open'' reactor, SiI2 transfers from a hot (>1100C) Si source to a cooler (>750C) Si substrate and decomposes easily via 2SiI2 Si+ SiI4 with up to 5?m/min deposition rate. SiI4 returns to cyclically transport more Si. When the source is metallurgical-grade Si, impurities can be effectively removed by three mechanisms: (1) differing free energies of formation in forming silicon and impurity iodides; (2) distillation; and (3) differing standard free energies of formation during deposition. Distillation has been previously reported. Here, we focused on mechanisms (1) and (3). We made feedstock, analyzed the impurity levels, grew Czochralski single crystals, and evaluated crystal and photovoltaic properties. Cell efficiencies of 9.5% were obtained. Incorporating distillation (step 2) should increase this to a viable level.

Ciszek, T. F.; Wang, T. H.; Page, M. R.; Bauer, R. E.; Landry, M. D.

2002-05-01T23:59:59.000Z

202

13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers  

SciTech Connect (OSTI)

The 13th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. It will offer an excellent opportunity for researchers in private industry and at universities to prioritize mutual needs for future collaborative research. The workshop is intended to address the fundamental aspects of impurities and defects in silicon: their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. A combination of oral, poster, and discussion sessions will review recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands.

Sopori, B. L.; Rand, J.; Saitoh, T.; Sinton, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.; Al-Jassim, M.

2003-08-01T23:59:59.000Z

203

Numerical simulations for high efficiency HIT solar cells using microcrystalline silicon as emitter and back surface field (BSF) layers  

Science Journals Connector (OSTI)

Abstract In present article the influence of thickness and band gap of microcrystalline silicon emitter layer, amorphous silicon front and back intrinsic layers and p-type crystalline silicon (c-Si) wafer thickness on the performance of TCO/?c-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/?c-Si:H(p+)/Ag Heterojunction with thin intrinsic layer (HIT) solar cell along with other structural possibilities were investigated through computer simulations using AFORS-HET software. These simulations revealed the importance of inclusion of intrinsic a-Si:H thin layer in improving the performance of solar cell with the help of interface passivation. Also microcrystalline BSF can raise the conversion efficiency more than 4% compared to HIT solar cell having no BSF layer. Highest stable efficiency of 24.12% for p-type substrate based HITBSF (HIT with back surface field) solar cells was observed. Furthermore the effect of textured transparent conductive oxide (TCO) on solar cells was investigated where the enhanced light trapping was observed with the use of textured TCO surface which raised the performance of solar cells. These optimizations may help in fabricating ?c-Si emitter and BSF based HIT solar cells with stable efficiencies compared to possibly degraded efficiencies as in case of a-Si:H based HIT solar cell structures studied so far.

Arti Rawat; Mansi Sharma; Deepika Chaudhary; S. Sudhakar; Sushil Kumar

2014-01-01T23:59:59.000Z

204

Photonic assisted light trapping integrated in ultrathin crystalline silicon solar cells by nanoimprint lithography  

E-Print Network [OSTI]

We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic nanopatterning, a better in-coupling and trapping of light is achieved, resulting in an absorption enhancement. The proposed light trapping mechanism can be explained as the superposition of a graded index effect and of the diffraction of light inside the photoactive layer. The absorption enhancement is translated into a 23% increase in short-circuit current, as compared to the benchmark cell, resulting in an increase in energy-conversion efficiency.

Trompoukis, Christos; Depauw, Valérie; Gordon, Ivan; Poortmans, Jef; 10.1063/1.4749810.

2012-01-01T23:59:59.000Z

205

High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilane  

SciTech Connect (OSTI)

The optical and electrical properties of hydrogenated amorphous silicon films produced by rf glow discharge decomposition of disilane diluted in helium (Si/sub 2/H/sub 6//He = 1/9) have been studied while systematically varying the film deposition rate. The properties and composition of the films were monitored by measuring the optical band gap, IR vibrational spectrum, dark conductivity, and the photoconductivity as a function of the deposition rate. The photoluminescence of the high deposition rate films gave a peak at 1.33 eV. These films, whose properties are rather similar to those of the conventional a-Si:H films prepared from monosilane, have been used to fabricate nip-type a-Si:H solar cells. At a deposition rate of 11 A/sec, a conversion efficiency of 6.86% was obtained. This high efficiency shows that disilane is applicable for mass production fabrication of a-Si:H solar cells.

Kenne, J.; Ohashi, Y.; Matsushita, T.; Konagai, M.; Takahashi, K.

1984-01-15T23:59:59.000Z

206

Ninth workshop on crystalline silicon solar cell materials and processes: Summary discussion sessions  

SciTech Connect (OSTI)

This report is a summary of the panel discussions included with the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme for the workshop was ``R and D Challenges and Opportunities in Si Photovoltaics.'' This theme was chosen because it appropriately reflects a host of challenges that the growing production of Si photovoltaics will be facing in the new millennium. The anticipated challenges will arise in developing strategies for cost reduction, increased production, higher throughput per manufacturing line, new sources of low-cost Si, and the introduction of new manufacturing processes for cell production. At the same time, technologies based on CdTe and CIS will come on line posing new competition. With these challenges come new opportunities for Si PV to wean itself from the microelectronics industry, to embark on a more aggressive program in thin-film Si solar cells, and to try new approaches to process monitoring.

Sopori, B.; Tan, T.; Swanson, D.; Rosenblum, M.; Sinton, R.

1999-11-23T23:59:59.000Z

207

Black Silicon Solar Thin-film Microcells Integrating Top Nanocone Structures for Broadband and Omnidirectional Light-Trapping  

E-Print Network [OSTI]

Recently developed classes of monocrystalline silicon solar microcells (u-cell) can be assembled into modules with characteristics (i.e., mechanically flexible forms, compact concentrator designs, and high-voltage outputs) that would be impossible to achieve using conventional, wafer-based approaches. In this paper, we describe a highly dense, uniform and non-periodic nanocone forest structure of black silicon (bSi) created on optically-thin (30 um) u-cells for broadband and omnidirectional light-trapping with a lithography-free and high-throughput plasma texturizing process. With optimized plasma etching conditions and a silicon nitride passivation layer, black silicon u-cells, when embedded in a polymer waveguiding layer, display dramatic increases of as much as 65.7% in short circuit current, as compared to a bare silicon device. The conversion efficiency increases from 8% to 11.5% with a small drop in open circuit voltage and fill factor.

Xu, Zhida; Brueckner, Eric P; Li, Lanfang; Jiang, Jing; Nuzzo, Ralph G; Liu, Gang L

2014-01-01T23:59:59.000Z

208

Progress and future view of silicon space solar cells in Japan  

SciTech Connect (OSTI)

The progress and the future of silicon (Si) space solar cells in Japan are reviewed. In 1994, two types of the high-efficiency silicon (HES) cells were developed: (1) NRS/LBSF cell; (2) NRS/BSF cell. The former shows the conversion efficiency of 18.0% (AM0, 28 C) at beginning-of-life (BOL), the latter shows superior radiation tolerance. In 1998, the radiation tolerance of the NRS/BSF cell was improved; moreover, the advanced high-efficiency silicon-1 (AHES-1) cell was accomplished. It shows 13.1% at end-of-life (EOL). The development has been proceeded to make the 13.7% EOL cell: AHES-2 cell. In 1994, the integrated bypass function (IBF), which prevents failures due to reverse biasing of cells, was proposed. The NRS/BSF cells with IBF have been used already on several satellites. The structures, performance, and radiation tolerances of these cells are introduced. New approaches for further improvement are proposed in the future view.

Suzuki, Akio; Kaneiwa, Minoru; Saga, Tatsuo; Matsuda, Sumio

1999-10-01T23:59:59.000Z

209

Development of manufacturing capability for high-concentration, high-efficiency silicon solar cells  

SciTech Connect (OSTI)

This report presents a summary of the major results from a program to develop a manufacturable, high-efficiency silicon concentrator solar cell and a cost-effective manufacturing facility. The program was jointly funded by the Electric Power Research Institute, Sandia National Laboratories through the Concentrator Initiative, and SunPower Corporation. The key achievements of the program include the demonstration of 26%-efficient silicon concentrator solar cells with design-point (20 W/cm{sup 2}) efficiencies over 25%. High-performance front-surface passivations; that were developed to achieve this result were verified to be absolutely stable against degradation by 475 days of field exposure at twice the design concentration. SunPower demonstrated pilot production of more than 1500 of these cells. This cell technology was also applied to pilot production to supply 7000 17.7-cm{sup 2} one-sun cells (3500 yielded wafers) that demonstrated exceptional quality control. The average efficiency of 21.3% for these cells approaches the peak efficiency ever demonstrated for a single small laboratory cell within 2% (absolute). Extensive cost models were developed through this program and calibrated by the pilot-production project. The production levels achieved indicate that SunPower could produce 7-10 MW of concentrator cells per year in the current facility based upon the cell performance demonstrated during the program.

Sinton, R.A.; Verlinden, P.J.; Crane, R.A.; Swanson, R.N. [SunPower Corp., Sunnyvale, CA (United States)

1996-10-01T23:59:59.000Z

210

Reaching Grid Parity Using BP Solar Crystalline Silicon Technology: A Systems Class Application  

SciTech Connect (OSTI)

The primary target market for this program was the residential and commercial PV markets, drawing on BP Solar's premium product and service offerings, brand and marketing strength, and unique routes to market. These two markets were chosen because: (1) in 2005 they represented more than 50% of the overall US PV market; (2) they are the two markets that will likely meet grid parity first; and (3) they are the two market segments in which product development can lead to the added value necessary to generate market growth before reaching grid parity. Federal investment in this program resulted in substantial progress toward the DOE TPP target, providing significant advancements in the following areas: (1) Lower component costs particularly the modules and inverters. (2) Increased availability and lower cost of silicon feedstock. (3) Product specifically developed for residential and commercial applications. (4) Reducing the cost of installation through optimization of the products. (5) Increased value of electricity in mid-term to drive volume increases, via the green grid technology. (6) Large scale manufacture of PV products in the US, generating increased US employment in manufacturing and installation. To achieve these goals BP Solar assembled a team that included suppliers of critical materials, automated equipment developers/manufacturers, inverter and other BOS manufacturers, a utility company, and University research groups. The program addressed all aspects of the crystalline silicon PV business from raw materials (particularly silicon feedstock) through installation of the system on the customers site. By involving the material and equipment vendors, we ensured that supplies of silicon feedstock and other PV specific materials like encapsulation materials (EVA and cover glass) will be available in the quantities required to meet the DOE goals of 5 to 10 GW of installed US PV by 2015 and at the prices necessary for PV systems to reach grid parity in 2015. This final technical report highlights the accomplishments of the BP Solar technical team from 2006 to the end of the project in February 2010. All the main contributors and team members are recognized for this accomplishment and their endeavors are recorded in the twelve main tasks described here.

Cunningham, Daniel W; Wohlgemuth, John; Carlson, David E; Clark, Roger F; Gleaton, Mark; Posbic, John P; Zahler, James

2010-12-06T23:59:59.000Z

211

Exciton harvesting, charge transfer, and charge-carrier transport in amorphous-silicon nanopillar/polymer hybrid solar cells  

E-Print Network [OSTI]

report on the device physics of nanostructured amorphous-silicon a-Si:H /polymer hybrid solar cells and nanostructured a-Si:H/polymer systems. We find that strong energy transfer occurs in the a-Si:H/MEH-PPV system. However, inefficient hole transfer from the a-Si:H to the polymers renders negligible photocurrent

McGehee, Michael

212

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR CELLS  

E-Print Network [OSTI]

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al of aluminum ox- ide (Al2O3) grown by atomic layer deposition (ALD) pro- vide an excellent level of sur

213

Optimization of the optical properties of nanostructured silicon surfaces for solar cell applications  

SciTech Connect (OSTI)

Surface nanostructuration is an important challenge for the optimization of light trapping in solar cell. We present simulations on both the optical properties and the efficiency of micro pillars—MPs—or nanocones—NCs—silicon based solar cells together with measurements on their associated optical absorption. We address the simulation using the Finite Difference Time Domain method, well-adapted to deal with a periodic set of nanostructures. We study the effect of the period, the bottom diameter, the top diameter, and the height of the MPs or NCs on the efficiency, assuming that one absorbed photon induces one exciton. This allows us to give a kind of abacus involving all the geometrical parameters of the nanostructured surface with regard to the efficiency of the associated solar cell. We also show that for a given ratio of the diameter over the period, the best efficiency is obtained for small diameters. For small lengths, MPs are extended to NCs by changing the angle between the bottom surface and the vertical face of the MPs. The best efficiency is obtained for an angle of the order of 70°. Finally, nanostructures have been processed and allow comparing experimental results with simulations. In every case, a good agreement is found.

Zhou, Di; Pennec, Y.; Djafari-Rouhani, B.; Lambert, Y.; Deblock, Y.; Stiévenard, D., E-mail: didier.stievenard@isen.fr [Institut d'Electronique et de Microélectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe de Physique, Cité scientifique, avenue Poincaré, 59652 Villeneuve d'Ascq (France); Cristini-Robbe, O. [PHLAM, UMR8523, Université de Lille 1, 59652 Villeneuve d'Asq Cedex (France); Xu, T. [Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Faucher, M. [Institut d'Electronique et de Microélectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe NAM6, Cité scientifique, avenue Poincaré, 59652 Villeneuve d'Asq (France)

2014-04-07T23:59:59.000Z

214

Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209  

SciTech Connect (OSTI)

NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

Sopori, B.

2013-03-01T23:59:59.000Z

215

Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells  

Science Journals Connector (OSTI)

Abstract We study solar cell properties of single silicon wires connected at their ends to two dissimilar metals of different work functions. Effects of wire dimensions, the work functions of the metals, and minority carrier lifetimes on short circuit current as well as open circuit voltage are studied. The most efficient photovoltaic behavior is found to occur when one metal makes a Schottky contact with the wire, and the other makes an Ohmic contact. As wire length increases, both short circuit current and open circuit voltage increase before saturation occurs. Depending on the work function difference between the metals and the wire dimensions, the saturation length increases by approximately an order of magnitude with a two order magnitude increase in minority carrier length. However current per surface area exposed to light is found to decrease rapidly with increase in length. The use of a multi-contact interdigitated design for long wires is investigated to increase the photovoltaic response of the devices.

M. Golam Rabbani; Amit Verma; Michael M. Adachi; Jency P. Sundararajan; Mahmoud M. Khader; Reza Nekovei; M.P. Anantram

2014-01-01T23:59:59.000Z

216

High-performance hybrid organic-inorganic solar cell based on planar n-type silicon  

SciTech Connect (OSTI)

Hybrid organic-inorganic solar cells were fabricated by spin coating the hole transporting conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film on n-type crystalline silicon (n-Si). By incorporating different additives into the PEDOT:PSS, the conductivity and wettability of PEDOT:PSS film are markedly improved, and the device performance is greatly enhanced accordingly. To further optimize the device performance, poly(3-hexylthiophene) (P3HT) layer was inserted between the n-Si and PEDOT:PSS layer. The P3HT layer blocks electrons from diffusing to the PEDOT:PSS, and hence reduces recombination at the anode side. The device eventually exhibits a high power conversion efficiency of 11.52%.

Chi, Dan [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qi, Boyuan; Wang, Jizheng [Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qu, Shengchun, E-mail: qsc@semi.ac.cn; Wang, Zhanguo [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-05-12T23:59:59.000Z

217

Exciton splitting and carrier transport across the amorphous-silicon/polymer solar cell interface  

Science Journals Connector (OSTI)

The authors study exciton splitting at the interface of bilayer hybridsolar cells to better understand the physics controlling organic-inorganicdevice performance. Hydrogenated amorphous silicon ( a - Si : H ) ? poly ( 3 - hexylthiophene ) (P3HT) and a - Si : H ? poly ( 2 - methoxy - 5 - ( 2 ? - ethyl - hexyloxy ) - 1 4 - phenylenevinylene ) (MEH-PPV) solar cells show photoresponse dominated by exciton production in the polymer. The a - Si : H ? P 3 HT devices are nearly as efficient as titania/P3HT cells. However the a - Si : H ? MEH - PPV system has much lower photocurrent than a - Si : H ? P 3 HT likely due to inefficient hole transfer back to the MEH-PPV after energy transfer from MEH-PPV to a - Si : H .

Vignesh Gowrishankar; Shawn R. Scully; Michael D. McGehee; Qi Wang; Howard M. Branz

2006-01-01T23:59:59.000Z

218

Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers  

SciTech Connect (OSTI)

The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

NONE

1998-08-01T23:59:59.000Z

219

Tenth Workshop on Crystalline Silicon Solar Cell Materials and Processes: A Summary of Discussion Sessions  

SciTech Connect (OSTI)

The 10th Workshop on Silicon Solar Cell Materials and Processes was held in Copper Mountain, Colorado, on August 13-16, 2000. The workshop was attended by 85 scientists and engineers from 15 international photovoltaic (PV) companies and 24 research institutions. Review and poster presentations were augmented by discussion sessions to address the recent progress and critical issues in meeting the goals for Si in the PV Industry Roadmap. The theme of the workshop was Si Photovoltaics: 10 Years of Progress and Opportunities for the Future. Two special sessions were held: Advanced Metallization and Interconnections - covering recent advances in solar cell metallization, printed contacts and interconnections, and addressing new metallization schemes for low-cost cell interconnections; and Characterization Methods - addressing the growing need for process monitoring techniques in the PV industry. The following major issues emerged from the discussion sessions: (1) Mechanical breakage in the P V industry involves a large fraction, about 5%-10%, of the wafers. (2) The current use of Al screen-printed back-contacts appears to be incompatible with the PV Industry Roadmap requirements. (3) The PV manufacturers who use hydrogen passivation should incorporate the plasma-enhanced chemical vapor deposited (PECVD) nitride for antireflection coating and hydrogenation. (4) There is an imminent need to dissolve metallic precipitates to minimize the electrical shunt problem caused by the ''bad'' regions in wafers. (5) Industry needs equipment for automated, in-line monitoring and testing. There are simply not many tools available to industry. (6) In the Wrap-Up Session of the workshop, there was consensus to create four industry/university teams that would address critical research topics in crystalline silicon. (7) The workshop attendees unanimously agreed that the workshop has served well the PV community by promoting the fundamental understanding of industrial processes, forecasting critical issues and research areas, and promoting a climate of openness to facilitate growth of the industry.

Tan, T.; Swanson, D.; Sinton, R.; Sopori, B.

2001-01-22T23:59:59.000Z

220

Solar-to-Hydrogen Photovoltaic/Photoelectrochemical Devices Using Amorphous Silicon Carbide as the Photoelectrode  

SciTech Connect (OSTI)

We report the use of hydrogenated amorphous silicon carbide (a-SiC:H) prepared by plasma enhanced chemical vapor deposition (PECVD) as the photoelectrode in an integrated 'hybrid' photoelectrochemical (PEC) cell to produce hydrogen directly from water using sunlight. Results on the durability of hydrogenated amorphous silicon carbide (a-SiC:H) photoelectrodes in an electrolyte are presented. In a pH2 electrolyte, the a-SiC:H photoelectrode exhibits excellent stability for 100 hour test so far performed. A photocurrent onset shift (anodically) after a 24- or 100-hour durability test in electrolyte is observed, likely due to changes in the surface chemical structure of the a-SiC:H photoelectrode. It is also observed that a thin SiOx layer native to the air exposed surface of the a-SiC:H affects the photocurrent and the its onset shift. Finally, approaches for eliminating the external bias voltage and enhancing the solar-to-hydrogen efficiency in a PV/PEC hybrid structure to achieve {>=} 10% are presented.

Hu, J.; Zhu, F.; Matulionis, I.; Kunrath, A.; Deutsch, T.; Kuritzky, L.; Miller, E.; Madan, A.

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration  

E-Print Network [OSTI]

are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon mc-Si . Metal silicide precipitate decoration is observed to increase the local metal silicide precipitate concentrations at various types of grain boundaries, identifying clear

222

Quality Characterization of Silicon Bricks using Photoluminescence Imaging and Photoconductive Decay: Preprint  

SciTech Connect (OSTI)

Imaging techniques can be applied to multicrystalline silicon solar cells throughout the production process, which includes as early as when the bricks are cut from the cast ingot. Photoluminescence (PL) imaging of the band-to-band radiative recombination is used to characterize silicon quality and defects regions within the brick. PL images of the brick surfaces are compared to minority-carrier lifetimes measured by resonant-coupled photoconductive decay (RCPCD). Photoluminescence images on silicon bricks can be correlated to lifetime measured by photoconductive decay and could be used for high-resolution characterization of material before wafers are cut. The RCPCD technique has shown the longest lifetimes of any of the lifetime measurement techniques we have applied to the bricks. RCPCD benefits from the low-frequency and long-excitation wavelengths used. In addition, RCPCD is a transient technique that directly monitors the decay rate of photoconductivity and does not rely on models or calculations for lifetime. The measured lifetimes over brick surfaces have shown strong correlations to the PL image intensities; therefore, this correlation could then be used to transform the PL image into a high-resolution lifetime map.

Johnston, S.; Yan, F.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Ounadjela, K.

2012-06-01T23:59:59.000Z

223

Module Handbook Specialisation Photovoltaics  

E-Print Network [OSTI]

solar cell Real solar cells Silicon solar cells: crystalline, multicrystalline, amorphous Cells: CdTe and CIGS technologies. Organic solar cells. Part 2: Fabrication Methods Crystal defects Theory Fabrication methods Solar cell properties Cell research and pilot productions facilities

Habel, Annegret

224

12th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Summary Discussion Sessions  

SciTech Connect (OSTI)

This report is a summary of the discussion sessions of the 12th Workshop on Crystalline Silicon Solar Cells and Processes. The theme of the workshop was"Fundamental R&D in c-Si: Enabling Progress in Solar-Electric Technology." This theme was chosen to reflect a concern that the current expansion in the PV energy production may redirect basic research efforts to production-oriented issues. The PV industry is installing added production capacity and new production lines that include the latest technologies. Once the technologies are selected, it is difficult to make changes. Consequently, a large expansion can stagnate the technologies and diminish interest in fundamental research. To prevent the fundamental R&D program from being overwhelmed by the desire to address immediate engineering issues, there is a need to establish topics of fundamental nature that can be pursued by the universities and the research institutions. Hence, one of the objectives of the workshop was to identify such areas for fundamental research.

Sopori, B.; Swanson, D.; Sinton, R.; Tan, T.

2003-02-01T23:59:59.000Z

225

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986  

SciTech Connect (OSTI)

A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

1987-02-01T23:59:59.000Z

226

Edge photoluminescence of single-crystal silicon with a p-n junction: Structures produced by high-efficiency solar cell technology  

Science Journals Connector (OSTI)

The systematic features and kinetics of edge photoluminescence of silicon structures produced by the high-efficiency solar cell technology is studied at different voltages applied to...p-n junction. It is shown t...

A. M. Emel’yanov

2011-06-01T23:59:59.000Z

227

Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base  

SciTech Connect (OSTI)

The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

1980-01-01T23:59:59.000Z

228

Microcrystalline silicon germanium: An attractive bottom-cell material for thin-film silicon-based tandem-solar-cells  

SciTech Connect (OSTI)

The authors have prepared hydrogenated microcrystalline silicon germanium by plasma enhanced CVD of a mixture of silane and germane gas diluted with hydrogen. The growth conditions have been systematically controlled to obtain large ({approximately}400{angstrom}) crystallites of silicon-germanium as observed using Raman scattering and x-ray diffraction. The dangling bond (germanium) density has been reduced to <5 x 10{sup 16} cm{sup {minus}3} at low substrate temperatures ({approximately}150 C). The optical absorption spectra of the 50% Ge containing material is red-shifted compared to microcrystalline silicon, consistent with a reduction of the indirect optical gap to 0.9 eV. Schottky type cells fabricated using Au on an n{sup +} crystalline silicon substrate confirm that the long wavelength response is remarkably enhanced in this material.

Ganguly, Gautam; Ikeda, Toru; Kajiwara, Kei; Matduda, Akihisa

1997-07-01T23:59:59.000Z

229

Spatially resolved determination of the short-circuit current density of silicon solar cells via lock-in thermography  

SciTech Connect (OSTI)

We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, D-79110 Freiburg (Germany)

2014-05-19T23:59:59.000Z

230

15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

Sopori, B. L.

2005-11-01T23:59:59.000Z

231

High performance hydrogenated amorphous silicon solar cells made at a high deposition rate by glow discharge of disilane  

SciTech Connect (OSTI)

The deposition rate, electronic and optical properties of hydrogenated amorphous silicon films prepared from rf glow discharge decomposition of disilane (Si/sub 2/H/sub 6/) diluted in helium have been measured. These films show excellent electrical and optical properties and, most importantly, a high deposition rate coupled with satisfactory solar cell application was realized for the first time. At a deposition rate of 11 A/s, 5.47% and 6.5% conversion efficiencies were obtained with a first trial of n-i-p type solar cells deposited on SnO/sub 2//ITO glass and metal substrates, respectively.

Ohashi, Y.; Kenne, J.; Konagai, M.; Takahashi, K.

1983-06-15T23:59:59.000Z

232

Industrial high performance crystalline silicon solar cells and modules based on rear surface passivation technology  

Science Journals Connector (OSTI)

Abstract Stimulated by the extreme market conditions, the increase in performance and the reduction of manufacturing costs of standard crystalline silicon solar cells and modules have been quite significant in the last years. This progress was achieved mainly by process and material improvements avoiding additional process complexity. As todays cells are predominantly limited by optical and recombination losses at the rear surface, dielectric rear surface passivation represents an obvious approach to overcome the limitations. In recent years several concepts have been developed to implement dielectric rear side passivation into industrial-scale mass production. In this paper a short review is given about the evolution of dielectric rear side passivation technologies as well as on state-of-the-art cell and module results. Simple and cost effective cell and module designs utilizing standard as well as innovative manufacturing technologies are presented. Furthermore, it is shown that for all major steps multiple process options are available to further reduce the manufacturing costs. Using an optimized emitter and screen-printed metallization on commercially available 156 mm×156 mm p-type Czochralski-grown crystalline silicon wafers best cell efficiencies of 19.9% without dielectric rear surface passivation and 21.0% with dielectric rear surface passivation are demonstrated. Replacing the screen-printed front contacts by electroplated nickel–copper contacts record efficiencies of up to 21.3% are reached. By optimizing the module design and materials to reduce the resistive and optical losses, a peak module power of up to 306 W and 19.5% aperture area efficiency are achieved.

Axel Metz; Dennis Adler; Stefan Bagus; Henry Blanke; Michael Bothar; Eva Brouwer; Stefan Dauwe; Katharina Dressler; Raimund Droessler; Tobias Droste; Markus Fiedler; Yvonne Gassenbauer; Thorsten Grahl; Norman Hermert; Wojtek Kuzminski; Agata Lachowicz; Thomas Lauinger; Norbert Lenck; Mihail Manole; Marcel Martini; Rudi Messmer; Christine Meyer; Jens Moschner; Klaus Ramspeck; Peter Roth; Ruben Schönfelder; Berthold Schum; Jörg Sticksel; Knut Vaas; Michael Volk; Klaus Wangemann

2014-01-01T23:59:59.000Z

233

Well-Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

We have developed hydrogenated amorphous silicon (a Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250 C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p type textured silicon wafers.

Page, M. R.; Iwaniczko, E.; Xu, Y.; Wang, Q.; Yan, Y.; Roybal, L.; Branz, H. M.; Wang, T. H.

2006-05-01T23:59:59.000Z

234

Broadband antireflection and absorption enhancement of ultrathin silicon solar microcells enabled with density-graded surface nanostructures  

SciTech Connect (OSTI)

Density-graded surface nanostructures are implemented on ultrathin silicon solar microcells by silver-nanoparticle-catalyzed wet chemical etching to enable near-zero surface reflection over a broad wavelength range of incident solar spectrum as well as non-zeroth order diffraction and light trapping for longer wavelength photons, thereby achieving augmented photon absorption for ultrathin silicon microcells in a simple, cost-effective manner. The increase of absorbed photon flux through the “black silicon (b-Si)” surface translates directly into the corresponding enhancement of photovoltaic performance, where 5.7-?m b-Si microcells with the rational design of device configuration exhibit improved energy conversion efficiency by 148% and 50% with and without a diffuse backside reflector, respectively, compared to devices from the bare silicon without b-Si implementation. Systematic studies on nanostructured morphology, optical and electrical properties of b-Si microcells, together with semi-empirical numerical modeling of photon absorption, provide key aspects of underlying materials science and physics.

Chan, Lesley; Kang, Dongseok; Lee, Sung-Min; Li, Weigu; Hunter, Hajirah [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States); Yoon, Jongseung, E-mail: js.yoon@usc.edu [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States); Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States)

2014-06-02T23:59:59.000Z

235

Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations  

SciTech Connect (OSTI)

Thin-film solar cells based on silicon have emerged as an alternative to standard thick wafers technology, but they are less efficient, because of incomplete absorption of sunlight, and non-radiative recombinations. In this paper, we focus on the case of crystalline silicon (c-Si) devices, and we present a full analytic electro-optical model for p-n junction solar cells with Lambertian light trapping. This model is validated against numerical solutions of the drift-diffusion equations. We use this model to investigate the interplay between light trapping, and bulk and surface recombination. Special attention is paid to surface recombination processes, which become more important in thinner devices. These effects are further amplified due to the textures required for light trapping, which lead to increased surface area. We show that c-Si solar cells with thickness of a few microns can overcome 20% efficiency and outperform bulk ones when light trapping is implemented. The optimal device thickness in presence of light trapping, bulk and surface recombination, is quantified to be in the range of 10–80??m, depending on the bulk quality. These results hold, provided the effective surface recombination is kept below a critical level of the order of 100?cm/s. We discuss the possibility of meeting this requirement, in the context of state-of-the-art techniques for light trapping and surface passivation. We show that our predictions are within the capability of present day silicon technologies.

Bozzola, A., E-mail: angelo.bozzola@unipv.it; Kowalczewski, P.; Andreani, L. C. [Physics Department, University of Pavia and CNISM, via Bassi 6, I-27100 Pavia (Italy)

2014-03-07T23:59:59.000Z

236

Crystal Silicon Heterojunction Solar Cells by Hot-Wire CVD: Preprint  

SciTech Connect (OSTI)

Hot-wire chemical vapor deposition (HWCVD) is a promising technique for fabricating Silicon heterojunction (SHJ) solar cells. In this paper we describe our efforts to increase the open circuit voltage (Voc) while improving the efficiency of these devices. On p-type c-Si float-zone wafers, we used a double heterojunction structure with an amorphous n/i contact to the top surface and an i/p contact to the back surface to obtain an open circuit voltage (Voc) of 679 mV in a 0.9 cm2 cell with an independently confirmed efficiency of 19.1%. This is the best reported performance for a cell of this configuration. We also made progress on p-type CZ wafers and achieved 18.7% independently confirmed efficiency with little degradation under prolong illumination. Our best Voc for a p-type SHJ cell is 0.688 V, which is close to the 691 mV we achieved for SHJ cells on n type c-Si wafers.

Wang, Q.; Page, M. R.; Iwaniczko, E.; Xu, Y. Q.; Roybal, L.; Bauer, R.; To, B.; Yuan, H. C.; Duda, A.; Yan, Y. F.

2008-05-01T23:59:59.000Z

237

Optimization of textured-dielectric coatings for crystalline-silicon solar cells  

SciTech Connect (OSTI)

The authors report on the optimization of textured-dielectric coatings for reflectance control in crystalline-silicon (c-Si) photovoltaic modules. Textured-dielectric coatings reduce encapsulated-cell reflectance by promoting optical confinement in the module encapsulation; i.e., the textured-dielectric coating randomizes the direction of rays reflected from the dielectric and from the c-Si cell so that many of these reflected rays experience total internal reflection at the glass-air interface. Some important results of this work include the following: the authors demonstrated textured-dielectric coatings (ZnO) deposited by a high-throughput low-cost deposition process; they identified factors important for achieving necessary texture dimensions; they achieved solar-weighted extrinsic reflectances as low as 6% for encapsulated c-Si wafers with optimized textured-ZnO coatings; and they demonstrated improvements in encapsulated cell performance of up to 0.5% absolute compared to encapsulated planar cells with single-layer antireflection coatings.

Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States). Photovoltaic System Components Dept.; Gordon, R.; Liang, H. [Harvard Univ., Cambridge, MA (United States). Dept. of Chemistry

1996-07-01T23:59:59.000Z

238

Ion beam assisted sputter deposition of ZnO for silicon thin-film solar cells  

Science Journals Connector (OSTI)

Ion beam assisted deposition (IBAD) is a promising technique for improving the material quality of ZnO-based thin films. The operation of an auxiliary Ar+ ion source during deposition of ZnO?:?Ga thin films by dc magnetron sputtering led to an improvement in crystalline texture, especially at low temperatures due to momentum transfer from the ions to the growing film. Etching of IBAD-ZnO?:?Ga films in diluted HCl revealed crater-like surface structures with crater diameters of up to 600 nm. These structures are usually achieved after deposition at high substrate temperatures. This is an indication that the grain structure was remarkably changed by bombarding these films during deposition in terms of increasing the compactness of the ZnO?:?Ga films. Subsequent annealing procedures led to an improvement in the electrical and optical properties. Hydrogenated microcrystalline silicon (µc-Si?:?H) solar cells exhibited enhanced efficiency as compared to cells on other low-temperature sputtered reference ZnO films. This improvement was ascribed to light trapping by the modified etching behaviour of the IBAD-ZnO?:?Ga films as well as improved transparency after the vacuum annealing step.

M Warzecha; D Köhl; M Wuttig; J Hüpkes

2014-01-01T23:59:59.000Z

239

Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint  

SciTech Connect (OSTI)

We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

2012-06-01T23:59:59.000Z

240

Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013  

SciTech Connect (OSTI)

Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

Ravi, T. S.

2013-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Integrated All-silicon Thin-film Power Electronics on Flexible Sheets For Ubiquitous Wireless Charging Stations based on Solar-energy Harvesting  

E-Print Network [OSTI]

into wireless charging stations. In this work, we combine the thin-film circuits with flexible solar cellsIntegrated All-silicon Thin-film Power Electronics on Flexible Sheets For Ubiquitous Wireless Charging Stations based on Solar-energy Harvesting Liechao Huang, Warren Rieutort-Louis, Yingzhe Hu, Josue

242

16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

Sopori, B. L.

2006-08-01T23:59:59.000Z

243

Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces  

DOE Patents [OSTI]

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2014-09-09T23:59:59.000Z

244

Realization of a near-perfect antireflection coating for silicon solar energy utilization  

Science Journals Connector (OSTI)

To harness the full spectrum of solar energy, Fresnel reflection at the surface of a solar cell must be eliminated over the entire solar spectrum and at all angles. Here, we show...

Kuo, Mei-Ling; Poxson, David J; Kim, Yong Sung; Mont, Frank W; Kim, Jong Kyu; Schubert, E Fred; Lin, Shawn-Yu

2008-01-01T23:59:59.000Z

245

Array automated assembly task for the Low-Cost Silicon Solar Array Project, Phase 2. Sixth quarterly report  

SciTech Connect (OSTI)

This program is concerned with nickel/solder metallization of silicon solar cells. Work in this second quarter of the program extension comprised portions of four experimental tasks. The task to study nickel plating on silicon oxide films has led to the finding that the plating solution dissolves oxide before depositing nickel. The electron microprobe study of nickel penetration of silicon has shown that sintering can be conducted for long times at 300/sup 0/C but that problems may arise above this temperature, even though there is no significant penetration of nickel into silicon below about 450/sup 0/C. Measurements on cells fabricated using plating times in the four to fourteen minute range indicate no degradation of cell properties as a result of contact with the plating solution in this time range, but do show evidence of poor contact quality if the nickel plate is either too thick or too thin. The task to assess the Motorola plating process is in its early stages, but it is evident that the process is a very complex and time consuming one.

Petersen, R.C.

1980-04-01T23:59:59.000Z

246

High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003  

SciTech Connect (OSTI)

The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

Rand, J. A.; Culik, J. S.

2005-10-01T23:59:59.000Z

247

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006  

SciTech Connect (OSTI)

The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

Wohlgemuth, J.; Narayanan, M.

2006-07-01T23:59:59.000Z

248

Advanced Light-Trapping in Thin-Film Silicon Solar Cells  

Science Journals Connector (OSTI)

Light-trapping schemes are essential for high efficiency thin-film Silicon devices. Implementation of various light-trapping/scattering elements will be discussed. An optimum textured...

Wyrsch, Nicolas

249

Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells  

Science Journals Connector (OSTI)

In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference...

Meng, Xianqin; Depauw, Valérie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Cécile; Fave, Alain; Dross, Frédéric; Gordon, Ivan; Seassal, Christian

2012-01-01T23:59:59.000Z

250

Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film  

SciTech Connect (OSTI)

We investigated the growth mechanism of amorphous silicon thin films by implementing hot-wire chemical vapor deposition and fabricated thin film solar cell devices. The fabricated cells showed efficiencies of 7.5 and 8.6% for the samples without and with the rear-reflector decomposed by sputtering, respectively. The rear-reflector enhances the quantum efficiency in the infrared spectral region from 550 to 750?nm. The more stable quantum efficiency of the sample with the inclusion of a rear-reflector than the sample without the rear-reflector due to the bias effect is related to the enhancement of the short circuit current.

Park, Seungil [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Yong Ji, Hyung; Jun Kim, Myeong; Hyeon Peck, Jong [Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Kim, Keunjoo, E-mail: kimk@chonbuk.ac.kr [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-02-17T23:59:59.000Z

251

Amorphous silicon/polyaniline heterojunction solar cells: Fermi levels and open-circuit voltages  

E-Print Network [OSTI]

these open-circuit voltages are lower than for the best a-Si:H cells utilizing nanocrystalline Si or a reports on conducting polymer/ amorphous silicon (a-Si:H) structures [1­4] and conduct- ing polymer/crystalline silicon (c-Si) structures [5,6]. In this paper, we report our research on polyaniline (PANI)/a-Si:H

Schiff, Eric A.

252

See-through amorphous silicon solar cells with selectively transparent and conducting photonic crystal back reflectors for building integrated photovoltaics  

SciTech Connect (OSTI)

Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with selectively transparent and conducting photonic crystal (STCPC) back-reflectors are demonstrated. Short circuit current density of a 135?nm thick a-Si:H cell with a given STCPC back-reflector is enhanced by as much as 23% in comparison to a reference cell with an ITO film functioning as its rear contact. Concurrently, solar irradiance of 295?W/m{sup 2} and illuminance of 3480 lux are transmitted through the cell with a given STCPC back reflector under AM1.5 Global tilt illumination, indicating its utility as a source of space heating and lighting, respectively, in building integrated photovoltaic applications.

Yang, Yang [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada)] [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); O’Brien, Paul G. [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada) [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada); Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Ozin, Geoffrey A., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Kherani, Nazir P., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada)

2013-11-25T23:59:59.000Z

253

17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating: Preprint  

SciTech Connect (OSTI)

In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon 'black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in 'black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

2011-07-01T23:59:59.000Z

254

Performance Measurement Technologies for High-Efficiency Crystalline Silicon Solar Cells  

Science Journals Connector (OSTI)

Accurate measurements of the I–V curves of crystalline silicon c-Si cells and modules are discussed. Special attention is paid to the recent high-efficiency devices. The effect of the sweep speed and direction...

Yoshihiro Hishikawa

2009-01-01T23:59:59.000Z

255

Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells  

E-Print Network [OSTI]

Reducing material use is a major driver for cost reduction of crystalline silicon photovoltaic modules. The dominant wafer fabrication process employed in the industry today, ingot casting & sawing, wastes approximately ...

Powell, Douglas M. (Douglas Michael)

2014-01-01T23:59:59.000Z

256

California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award  

Office of Energy Efficiency and Renewable Energy (EERE)

TetraSun, in partnership with the National Renewable Energy Laboratory, developed a novel crystalline silicon photovoltaic (PV) cell architecture and manufacturing process that achieves efficiencies exceeding 21% with costs comparable to conventional crystalline PV cells.

257

Antireflective silicon nanostructures with hydrophobicity by metal-assisted chemical etching for solar cell applications  

Science Journals Connector (OSTI)

We present broadband antireflective silicon (Si) nanostructures with hydrophobicity using a spin-coated Ag ink and by subsequent metal-assisted chemical etching (MaCE). Improved understanding of ... reveals a des...

ChanIl Yeo; Joon Beom Kim; Young Min Song; Yong Tak Lee

2013-04-01T23:59:59.000Z

258

ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES  

SciTech Connect (OSTI)

Air Products set out to investigate the impact of additives on the deposition rate of both ���µCSi and ���±Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products�¢���� electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

Ridgeway, R.G.; Hegedus, S.S.; Podraza, N.J.

2012-08-31T23:59:59.000Z

259

Ho3+-doped nanophase glass ceramics for efficiency enhancement in silicon solar cells  

Science Journals Connector (OSTI)

Currently Er3+-doped fluorides are being used as upconversion phosphors to enhance the efficiency of Si solar cells, to our knowledge. However, this enhancement is...

Lahoz, Fernando

2008-01-01T23:59:59.000Z

260

Experimental Demonstration of Quasi-Resonant Absorption in Silicon Thin Films for Enhanced Solar Light Trapping  

E-Print Network [OSTI]

We experimentally demonstrate that the addition of partial lattice disorder to a thin-film micro-crystalline silicon photonic crystal results in the controlled spectral broadening of its absorption peaks to form quasi resonances; increasing light trapping over a wide bandwidth while also reducing sensitivity to the angle of incident radiation. Accurate computational simulations are used to design the active-layer photonic crystal so as to maximize the number of its absorption resonances over the broadband interval where micro-crystalline silicon is weakly absorbing before lattice disorder augmented with fabrication-induced imperfections are applied to further boost performance. Such a design strategy may find practical use for increasing the efficiency of thin-film silicon photovoltaics.

Oskooi, Ardavan; Ishizaki, Kenji; Noda, Susumu

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

New Approaches for Passivation of Crystalline and Amorphous Silicon: Cooperative Research and Development Final Report, CRADA Number CRD-09-351  

SciTech Connect (OSTI)

New approaches of passivating crystalline, multicrystalline, and amorphous silicon will be explored. These will include the use of aqueous solution of KCN and a proprietary composition formulated by Mallinckrodt Baker, Inc. The surface passivation will be compared with that provided by an iodine-ethanol solution, and bulk passivation will be compared with that of H-passivation obtained by silicon nitride, in a fire-through process.

Sopori, B.

2012-09-01T23:59:59.000Z

262

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon  

E-Print Network [OSTI]

World Conference on Photovoltaic Energy Conversion ?IEEE,World Con- ference on Photovoltaic Energy Conversion, ?IEEE,World Conference on Photovoltaic Energy Conversion ?IEEE,

Ganapati, Vidya

2012-01-01T23:59:59.000Z

263

LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS  

E-Print Network [OSTI]

- dimensional finite element modeling with a resistance network simulation. The simulated and measured current of the best cell with 13.5 % efficiency is the high saturation current density at the metal-silicon interface significance of various loss mechan- isms. This analysis is the purpose of this contribution. Standard

264

Back-side hydrogenation technique for defect passivation in silicon solar cells  

DOE Patents [OSTI]

A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts. 3 figures.

Sopori, B.L.

1994-04-19T23:59:59.000Z

265

The Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Proposition for High Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications Preprint Alan Goodrich, Michael Woodhouse, and Peter Hacke Presented at the 2012 IEEE Photovoltaic Specialists Conference Austin, Texas June 3-8, 2012 Conference Paper NREL/CP-6A20-55477 June 2012 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (Alliance), a contractor of the US Government under Contract No. DE-AC36-08GO28308. Accordingly, the US Government and Alliance retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government.

266

Introduction – Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells  

Science Journals Connector (OSTI)

Although photovoltaic solar energy technology (PV) is not the sole answer to the challenges posed by the ever-growing energy consumption worldwide, this renewable energy option can make an important contributi...

Wilfried van Sark; Lars Korte…

2012-01-01T23:59:59.000Z

267

Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating silver nanoparticles  

Science Journals Connector (OSTI)

Organic solar cells have emerged as potential energy conversion devices ... -transparent characteristics, and ability to large-scale production at low temperature [1–3...]. However, their reported efficiencies ar...

Kong Liu; Shengchun Qu; Xinhui Zhang; Furui Tan; Zhanguo Wang

2013-02-01T23:59:59.000Z

268

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network [OSTI]

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

269

Experimental optimization of an anisotropic etching process for random texturization of silicon solar cells  

SciTech Connect (OSTI)

A multifactor experimental investigation of silicon surface texturing was conducted in Sandia's Photovoltaic Device Fabrication Laboratory using aqueous potassium-hydroxide (KOH) solutions with isopropyl alcohol (IPA) added as a complexing agent. Czochralski, magnetic-Czochralski, and float-zone silicon wafers of different resistivities with both polished and lapped surfaces were included in the experiment. Process variables considered were solution temperature, time in solution, degree of mechanical mixing, KOH concentration, and IPA concentration. Using hemispherical reflectance as the primary gauge of success, process variables were identified that resulted in an effective surface texture with reflectance less than 12% prior to anti-reflection coating. Of particular interest was a low temperature (70 {degrees}C) process with less than 2% concentration of both KOH and IPA and wide process variable tolerances. 6 refs., 6 figs., 1 tab.

King, D.L.; Buck, M.E.

1991-01-01T23:59:59.000Z

270

Excellent Passivation and Low Reflectivity Al2O3/TiO2 Bilayer Coatings for n-Wafer Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes {approx}1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.

Lee, B. G.; Skarp, J.; Malinen, V.; Li, S.; Choi, S.; Branz, H. M.

2012-06-01T23:59:59.000Z

271

Vacuum deposited polycrystalline silicon films for solar cell applications. Quarterly report, September 15-December 31, 1979  

SciTech Connect (OSTI)

Polycrystalline silicon films 14-22 ..mu..m thick and with average grain diameters of 20-40 ..mu..m were deposited by vacuum deposition onto both ceramic and sapphire substrates which were previously coated with a thin (1-2 ..mu..m) TiB/sub 2/ conducting layer. The large grains are the result of an interaction in the initial growth stages between silicon and TiB/sub 2/. SIMS studies of B/Ti/Al/sub 2/O/sub 3/, B/Al/sub 2/O/sub 3/, and Ti/Al/sub 2/O/sub 3/, interactions are reported as part of a continuing investigation of TiB/sub 2/ formation and silicon interactions on the TiB/sub 2/ surface. The increase in grain size has led to an improvement in the open-circuit voltage V/sub oc/, but not to an increase in the short-circuit current J/sub sc/. Capacitance-voltage measurements give results characteristic of an abrupt junction and a build-in voltage V/sub D/ consistent with the measured doping levels. A simple method for measuring the minority carrier diffusion length in the base region L/sub n/ is described. The measurements indicate that there is little change in L/sub n/ between large (20-40 ..mu..m) and small (approx. 5 ..mu..m) grained samples.

Feldman, C.; Arrington, C. H.; Blum, N. A.; Satkiewicz, F. G.

1980-03-01T23:59:59.000Z

272

Fabrication of contacts for silicon solar cells including printing burn through layers  

DOE Patents [OSTI]

A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

2014-06-24T23:59:59.000Z

273

Development of tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar panels with reflective layer and 4-step laser scribing for building-integrated photovoltaic applications  

Science Journals Connector (OSTI)

In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and ...

Chin-Yi Tsai, Chin-Yao Tsai

2014-01-01T23:59:59.000Z

274

Solar  

Science Journals Connector (OSTI)

With sharp drop in costs for photovoltaic and solar thermal processes, solar energy has become more attractive alternative ... Almost half the total was earmarked for PV and solar thermal projects. ...

WARD WORTHY

1991-06-17T23:59:59.000Z

275

DOE Solar Energy Technologies Program TPP Final Report - A Value Chain Partnership to Accelerate U.S. PV Industry Growth, GE Global Research  

SciTech Connect (OSTI)

General Electric’s (GE) DOE Solar Energy Technologies TPP program encompassesd development in critical areas of the photovoltaic value chain that affected the LCOE for systems in the U.S. This was a complete view across the value chain, from materials to rooftops, to identify opportunities for cost reductions in order to realize the Department of Energy’s cost targets for 2010 and 2015. GE identified a number of strategic partners with proven leadership in their respective technology areas to accelerate along the path to commercialization. GE targeted both residential and commercial rooftop scale systems. To achieve these goals, General Electric and its partners investigated three photovoltaic pathways that included bifacial high-efficiency silicon cells and modules, low-cost multicrystalline silicon cells and modules and flexible thin film modules. In addition to these technologies, the balance of system for residential and commercial installations were also investigated. Innovative system installation strategies were pursed as an additional avenue for cost reduction.

Todd Tolliver; Danielle Merfeld; Charles Korman; James Rand; Tom McNulty; Neil Johnson; Dennis Coyle

2009-07-31T23:59:59.000Z

276

Solar Power Industries SPI | Open Energy Information  

Open Energy Info (EERE)

Solar Power Industries SPI Solar Power Industries SPI Jump to: navigation, search Name Solar Power Industries (SPI) Place Belle Vernon, Pennsylvania Zip 15012 Product US-based manufacturer of mono and multicrystalline PV cells, modules and systems. References Solar Power Industries (SPI)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Power Industries (SPI) is a company located in Belle Vernon, Pennsylvania . References ↑ "Solar Power Industries (SPI)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Power_Industries_SPI&oldid=351318" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version

277

Angular behavior of the absorption limit in thin film silicon solar cells  

E-Print Network [OSTI]

We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

Naqavi, Ali; Söderström, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

2013-01-01T23:59:59.000Z

278

Array automated assembly task low cost silicon solar array project. Phase 2. Final report  

SciTech Connect (OSTI)

The initial contract was a Phase II Process Development for a process sequence, but with concentration on two particular process steps: laserscribing and spray-on junction formation. The add-on portion of the contract was to further develop these tasks, to incorporate spray-on of AR Coating and aluminum and to study the application of microwave energy to solar cell fabrication. The overall process cost projection is 97.918 cents/Wp. The major contributor to this excess cost is the module encapsulation materials cost. During the span of this contract the study of microwave application to solar cell fabrication produced the ability to apply this technique to any requirement of 600/sup 0/C or less. Above this temperature, non-uniformity caused the processing to be unreliable. The process sequence is described in detail, and a SAMICS cost analysis for each valid process step studied is presented. A temporary catalog for expense items is included, and engineering specifications for the process steps are given. (WHK)

Olson, Clayton

1980-12-01T23:59:59.000Z

279

Luminescent Study of Recombination Processes in the Single-Crystal Silicon and Silicon Structures Fabricated Using High-Efficiency Solar Cell Technology  

Science Journals Connector (OSTI)

Some results of the author’s researches in the last decade of the luminescence in the region of the fundamental absorption edge (edge luminescence) of the single-crystal silicon (c-Si), including structures which...

A. M. Emel’yanov

2014-01-01T23:59:59.000Z

280

Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells  

Science Journals Connector (OSTI)

The formation mechanism and properties of the boron-oxygen center responsible for the degradation of Czochralski-grown Si(B) solar cells during operation is investigated using density functional calculations. We find that boron traps an oxygen dimer to form a bistable defect with a donor level in the upper half of the band gap. The activation energy for its dissociation is found to be 1.2 eV. The formation of the defect from mobile oxygen dimers, which are shown to migrate by a Bourgoin mechanism under minority carrier injection, has a calculated activation energy of 0.3 eV. These energies and the dependence of the generation rate of the recombination center on boron concentration are in good agreement with observations.

J. Adey; R. Jones; D. W. Palmer; P. R. Briddon; S. Öberg

2004-07-30T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Excitonic Solar Cells  

Science Journals Connector (OSTI)

Excitonic Solar Cells ... Existing types of solar cells may be divided into two distinct classes:? conventional solar cells, such as silicon p?n junctions, and excitonic solar cells, XSCs. ... Most organic-based solar cells, including dye-sensitized solar cells, DSSCs, fall into the category of XSCs. ...

Brian A. Gregg

2003-05-01T23:59:59.000Z

282

Scatec Solar | Open Energy Information  

Open Energy Info (EERE)

Scatec Solar Jump to: navigation, search Name: Scatec Solar Place: Norway Product: Norwegian PV system integrator with a parent, Norsun, that manufactures monocrystalline silicon...

283

Performance and analysis of amorphous silicon p-i-n solar cells made by chemical-vapor deposition from disilane  

SciTech Connect (OSTI)

The photovoltaic performance of amorphous silicon p-i-n solar cells made by chemical-vapor deposition (CVD) from disilane is reported and analyzed. Intrinsic layers were deposited at rates from 0.2 to 50 A/s at temperatures from 380 to 460 /sup 0/C with and without boron doping. Device performance was insensitive to substantial differences in disilane purity. A cell efficiency of 4% was achieved. The primary limitation to higher efficiency was low fill factor (<50%) due to high series resistance (>18 ..cap omega.. cm/sup 2/). Analysis of the series resistance indicated a contact-related resistance of 4--12 ..cap omega.. cm/sup 2/ and a photoconductive resistance composed of intrinsic layer thickness-independent (10 ..cap omega.. cm/sup 2/) and thickness-dependent terms. Analysis of the voltage dependence of the current collection indicated a fill factor of 60% would be expected in the absence of series resistance. The maximum short-circuit current of 12.5 mA/cm/sup 2/ (normalized to 100 mW/cm/sup 2/) resulted with a boron-doped i layer deposited at 440 /sup 0/C at 3.3 A/s. Modeling of the collection efficiency indicated collection widths up to 0.33 ..mu..m for boron-doped and 0.24 ..mu..m for undoped p-i-n devices. In order to achieve high-efficiency cells using CVD from disilane, the limitations imposed by low photoconductivity, a high density of states, and restricted cell design imposed by the high deposition temperatures would have to be overcome.

Hegedus, S.S.; Rocheleau, R.E.; Buchanan, W.; Baron, B.N.

1987-01-01T23:59:59.000Z

284

E-Print Network 3.0 - acid textured mc-si Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Page: << < 1 2 3 4 5 > >> 1 Plasma texturing of multicrystalline silicon for solar cell using remote-type pin-to-plate dielectric barrier discharge Summary: ) on the...

285

Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation  

E-Print Network [OSTI]

We study polarization independent improved light trapping in commercial thin film hydrogenated amorphous silicon (a-Si:H) solar photovoltaic cells using a three-dimensional silver array of multi-resonant nano-disk structures embedded in a silicon nitride anti-reflection coating (ARC) to enhance optical absorption in the intrinsic layer (i-a-Si:H) for the visible spectrum for any polarization angle. Predicted total optical enhancement (OE) in absorption in the i-a-Si:H for AM-1.5 solar spectrum is 18.51% as compared to the reference, and producing a 19.65% improvement in short-circuit current density (JSC) over 11.7 mA/cm2 for a reference cell. The JSC in the nano-disk patterned solar cell (NDPSC) was found to be higher than the commercial reference structure for any incident angle. The NDPSC has a multi-resonant optical response for the visible spectrum and the associated mechanism for OE in i-a-Si:H layer is excitation of Fabry-Perot resonance facilitated by surface plasmon resonances. The detrimental Staebl...

Vora, Ankit; Pearce, Joshua M; Bergstrom, Paul L; Güney, Durdu Ö

2014-01-01T23:59:59.000Z

286

Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Final technical report  

SciTech Connect (OSTI)

Transparent conducting fluorine doped zinc oxide was deposited as thin films on soda lime glass substrates by atmospheric pressure chemical vapor deposition (CVD) at substrate temperatures of 460 to 500 degrees C. The precursors diethylzinc, tetramethylethylenediamine and benzoyl fluoride were dissolved in xylene. This solution was nebulized ultrasonically and then flash vaporized by a carrier gas of nitrogen preheated to 150 degrees C. Ethanol was vaporized separately, and these vapors were then mixed to form a homogeneous vapor mixture. Good reproducibility was achieved using this new CVD method. Uniform thicknesses were obtained by moving the heated glass substrates through the deposition zone. The best electrically and optical properties were obtained when the precursor solution was aged for more than a week before use. The films were polycrystalline and highly oriented with the c-axis perpendicular to the substrate. More than 90% of the incorporated fluorine atoms were electrically active as n-type dopants. The electrical resistivity of the films was as low as 5 x 10/sup -4/ Omega cm. The mobility was about 45 cm ²/Vs. The electron concentration was up to 3 x 10 %sup20;/cm³. The optical absorption of the films was about 3-4% at a sheet resistance of 7 ohms/square. The diffuse transmittance was about 10% at a wavelength of 650 nm. Amorphous ilicon solar cells were deposited using the textured fluorine doped zinc oxide films as a front electrode. The short circuit current was increased over similar cells made with fluorine doped tin oxide, but the open circuit voltages and fill factors were reduced. The voltage was restored by overcoating the fluorine-doped zinc oxide with a thin layer of fluorine-doped tin oxide.

Gordon, R.G.; Kramer, K.; Liang, H.; Liu, X.; Pang, D.; Teff, D.

1998-09-01T23:59:59.000Z

287

PHYSICAL REVIEW B 90, 115209 (2014) Computational search for direct band gap silicon crystals  

E-Print Network [OSTI]

abundance, silicon is the preferred solar-cell material despite the fact that current silicon materials have semiconductor. For this reason, the most widely used solar-cell materials are all silicon based [1]. Current

Lee, Jooyoung

288

The Market Value and Cost of Solar Photovoltaic Electricity Production  

E-Print Network [OSTI]

in crystalline silicon solar technologies have occurred overthe current solar PV technology, even after adjusting forde?cit of the current solar PV technology with the potential

Borenstein, Severin

2008-01-01T23:59:59.000Z

289

The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact  

SciTech Connect (OSTI)

The electronic structure of the interface between the boron-doped oxygenated amorphous silicon 'window layer' (a-SiO{sub x}:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon ({mu}c-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 {+-} 0.27) eV and (-3.37 {+-} 0.27) eV, respectively. A lower tunnel junction barrier height at the {mu}c-Si:H(B)/ZnO:Al interface compared to that at the a-SiO{sub x}:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a {mu}c-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

Gerlach, D.; Wilks, R. G.; Wimmer, M.; Felix, R.; Gorgoi, M.; Lips, K.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Wippler, D.; Mueck, A.; Meier, M.; Huepkes, J. [Institut fuer Energie- und Klimaforschung, Forschungszentrum Juelich GmbH, Wilhelm-Johnen-Strasse, D-52428 Juelich (Germany); Lozac'h, M.; Ueda, S.; Sumiya, M. [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Yoshikawa, H. [Synchrotron X-ray Station at SPring-8, NIMS, Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Kobayashi, K. [Quantum Beam Science Directorate, Japan Atomic Energy Agency, Kouto 1-1-1, SPring-8, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Baer, M. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Institut fuer Physik und Chemie, Brandenburgische Technische Universitaet Cottbus, Konrad-Wachsmann-Allee 1, D-03046 Cottbus (Germany)

2013-07-08T23:59:59.000Z

290

Utilization of Direct and Diffuse Sunlight in a Dye-Sensitized Solar Cell — Silicon Photovoltaic Hybrid Concentrator System  

Science Journals Connector (OSTI)

Nanocrystalline dye-sensitized solar cells (DSSCs) and organic photovoltaics (OPV) are two families of low-cost solar devices that absorb light in the visible part of the spectrum. ... del Cueto, J. A.Comparison of Energy Production and Performance from Flat-Plate Photovoltaic Module Technologies Deployed at Fixed Tilt. ... dye-sensitized solar cell as a top cell for high-energy photons, and a Cu In Ga selenide thin-film bottom cell for lower-energy photons, produces AM 1.5 solar to elec. ...

Greg D. Barber; Paul G. Hoertz; Seung-Hyun Anna Lee; Neal M. Abrams; Janine Mikulca; Thomas E. Mallouk; Paul Liska; Shaik M. Zakeeruddin; Michael Grätzel; Anita Ho-Baillie; Martin A. Green

2011-02-28T23:59:59.000Z

291

MAKING SOLAR PANELS GREENER  

Science Journals Connector (OSTI)

MAKING SOLAR PANELS GREENER ... Producing PHOTOVOLTAIC PANELS more sustainably will require reducing energy consumption, toxic substances ... For example, consider crystalline silicon-based photovoltaic solar panels, which currently boast about 80% of the global market. ...

SARAH EVERTS

2011-02-21T23:59:59.000Z

292

Solar Manufacturing Technology 2 | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Solar Manufacturing Technology 2 Solar Manufacturing Technology 2 The PV awards span the supply chain from novel methods to make silicon wafers, to advanced cell and metallization...

293

Nucleation and solidification of silicon for photovoltaics  

E-Print Network [OSTI]

The majority of solar cells produced today are made with crystalline silicon wafers, which are typically manufactured by growing a large piece of silicon and then sawing it into ~200 pm wafers, a process which converts ...

Appapillai, Anjuli T. (Anjuli Tara)

2010-01-01T23:59:59.000Z

294

Becancour Silicon Inc BSI | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Name: Becancour Silicon Inc (BSI) Place: St. Laurent, Quebec, Canada Zip: H4M2M4 Sector: Solar Product: Canadian supplier of silicon metal for the...

295

Silicon/Organic Heterojunction to Block Minority Carriers  

E-Print Network [OSTI]

silicon solar cells are typically fabricated on thin high-quality silicon wafers ( (Fig. 4.1(a)). Conventional silicon solar cells use diffused p/p+ back-surface fields to reduce (c) Figure 4.1: (a) Band Diagram of solar cell in which recombination at the metal contact dominates

296

Lead selenide nanowire solar cells via LPNE and its new found derivatives  

E-Print Network [OSTI]

type of solar cell in this third generation technology thatgeneration solar technology based on thick silicon cells,

Hujdic, Justin

2012-01-01T23:59:59.000Z

297

Silicon heterojunction solar cell with passivated hole selective MoOx contact Corsin Battaglia,1,2  

E-Print Network [OSTI]

amorphous silicon layer (a-Si:H) as surface passivation layer.3,4 Carrier selectivity at the contacts is traditionally achieved by depos- iting a doped a-Si:H layer after passivation. With this approach record open coefficient combined with a high defect density, a-Si:H, even when only a few nanometers thin, leads to sig

Javey, Ali

298

Wide band-gap, fairly conductive p-type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application  

SciTech Connect (OSTI)

Wide optical band-gap (2.0--2.3 eV) undoped and boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) films have been prepared by both direct photo and rf glow discharge (GD plasma) decomposition of pure methylsilanes or acetylene and disilane gas mixtures. The photochemically prepared p-type films showed higher dark conductivities and lower activation energies. For an optical band gap of 2.0 eV a high conductivity of 7.0 x 10/sup -5/ (S cm/sup -1/) and a low activation energy of 0.33 eV have been measured. The first trial of these wide band-gap, fairly conductive films as a window layer in a p-i-n solar cell showed the high conversion efficiency of 9.46% under AM1 insolation.

Yamada, A.; Kenne, J.; Konagai, M.; Takahashi, K.

1985-02-01T23:59:59.000Z

299

System and method for liquid silicon containment  

DOE Patents [OSTI]

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2013-05-28T23:59:59.000Z

300

System and method for liquid silicon containment  

SciTech Connect (OSTI)

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2014-06-03T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

The Surface Texturing of Monocrystalline Silicon with NH4OH and Ion Implantation for Applications in Solar Cells Compatible with CMOS Technology  

Science Journals Connector (OSTI)

Abstract This work presents the development of photovoltaic cells based on p+/n junction in Si substrates, aimed at compatibility with fabrication processes with CMOS technology. The compatible processes, which are developed in this study, are the techniques: i) Si surface texturing, with the textured surface reflection of 15% obtained by the formation of micro-pyramids (heights between 3 and 7 ?m) using NH4OH (ammonium hydroxide) alkaline solution, which is free of undesirable contamination by Na+ and K+ ions, when NaOH and KOH traditional solutions are used, respectively, and ii) of the ECR-CVD (Electron Cyclotron Resonance - Chemical Vapor Deposition) deposition of SiNx (silicon nitride) anti-reflective coating (ARC), which is carried out at room temperature and can be performed after the end of cell fabrication without damage on metallic tracks and without variation of p+/n junction depth. The ARC coating characterization presented that the silicon nitride has a refractive index of 1.92 and a minimum reflectance of 1.03%, which is an excellent result for application in solar (or photovoltaic) cells. For the formation of the pn junction was used ion implantation process with 11B+, E=20 KeV, dose of 1x1015 cm2 and four rotations of 90° to get uniformity on texturized surfaces.

A.R. Silva; J. Miyoshi; J.A. Diniz; I. Doi; J. Godoy

2014-01-01T23:59:59.000Z

302

Simultaneous P and B diffusion, in-situ surface passivation, impurity filtering and gettering for high-efficiency silicon solar cells  

SciTech Connect (OSTI)

A technique is presented to simultaneously diffuse boron and phosphorus in silicon, and grow an in-situ passivating oxide in a single furnace step. It is shown that limited solid doping sources made from P and B Spin-On Dopant (SOD) films can produce optimal n{sup +} and p{sup +} profiles simultaneously without the deleterious effects of cross doping. A high quality passivating oxide is grown in-situ beneath the thin ({approximately} 60 {angstrom}) diffusion glass, resulting in low J{sub o} values below 100 fA/cm{sup 2} for transparent ({approximately} 100 {Omega}/{open_square}) phosphorus and boron diffusions. For the first time it is shown that impurities present in the boron SOD film can be effectively filtered out by employing separate source wafers, resulting in bulk lifetimes in excess of 1 ms for the sample wafers. The degree of lifetime degradation in the sources is related to the gettering efficiency of boron in silicon. This novel simultaneous diffusion, in-situ oxidation, impurity filtering and gettering technique was successfully used to produce 20.3% Fz, and 19.1% Cz solar cells, in one furnace step.

Krygowski, T.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States); Ruby, D. [Sandia National Labs., Albuquerque, NM (United States)

1997-11-01T23:59:59.000Z

303

Contribution to solving the energy crisis: Simulating the prospects for low cost energy through silicon solar cells  

Science Journals Connector (OSTI)

PECAN (Photovoltaic Energy Conversion Analysis) is a highly interactive decision analysis and support system. It simulates the prospects for widespread use of solar cells for the generation of electrical power. PECAN consists of a set of integrated APL ...

Alexander Kran

1978-03-01T23:59:59.000Z

304

Method for fabricating silicon cells  

DOE Patents [OSTI]

A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

Ruby, D.S.; Basore, P.A.; Schubert, W.K.

1998-08-11T23:59:59.000Z

305

EE580 Solar Cells Todd J. Kaiser  

E-Print Network [OSTI]

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 06 · Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies · A) Crystalline Silicon · B) Thin Film · C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

Kaiser, Todd J.

306

Dye-Sensitized Solar Cells  

Science Journals Connector (OSTI)

Ever since the invention of the silicon solar cell in the 1940s, people have acknowledged the ... potential of photovoltaic systems for large scale electricity production. However, semiconductor grade silicon waf...

Jan Kroon; Andreas Hinsch

2003-01-01T23:59:59.000Z

307

Towards sustainable photovoltaics: the search for new materials  

Science Journals Connector (OSTI)

...and multi-crystalline silicon solar panels in 2009 was just over 80 per cent...The market share gained by CdTe solar panels is increasing rapidly, doubling...First Solar currently the largest solar panel producer in the world ( http...

2011-01-01T23:59:59.000Z

308

Phase 2 of the array automated assembly task for the Low Cost Silicon Solar Array Project. Seventh quarterly report  

SciTech Connect (OSTI)

Work during this quarter emphasized the evaluation of the Motorola metallization process, the major experimental task of the program. The Motorola process is a lengthy one, designed to assure reproducible metallization of solar cells, but it was found difficult to reproduce relative to a single step electroless nickel plating. It is also concluded, on the basis of experiments performed to date, that the product of the Motorola process is virtually identical to the product of a simple electroless nickel plating process.

Petersen, R.C.

1980-07-01T23:59:59.000Z

309

13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Summary Discussion, 10-13 August 2003, Vail, Colorado  

SciTech Connect (OSTI)

The 13th Workshop discussion sessions addressed recent progress, critical issues in implementing new technologies, and the role of fundamental R&D in the growing PV industry. For the first time, we included a rump session, which was held on Sunday evening, August 10. This session included a panel of representatives, from various photovoltaic companies, who led a discussion of''R&D Challenges in Si PV.'' A special poster/presentation session was held on Monday evening, August 11, in which NREL/DOE subcontractors highlighted their results of research performed during the current subcontract period. This session served as a subcontract review. The workshop offered special sessions to discuss: (1) High-Efficiency Si Solar Cells, which reviewed progress made in implementing high-efficiency Si solar cell fabrication processes in the manufacturing environment; (2) Advanced Processing, as future potential approaches for making Si solar cells; (3) Commercial Issues, which addressed basic understanding behind recent processes that have been used by the PV industry; and (4) Automation and Equipment, to address capabilities and requirements of new manufacturing equipment.

Sopori, B.; Sinton, R.; Tan, T.; Swanson, D.

2004-01-01T23:59:59.000Z

310

Solar Plus SA | Open Energy Information  

Open Energy Info (EERE)

Solar Plus SA Place: Lisbon, Portugal Sector: Solar Product: Plans to set up a 5.5MWyear thin-film silicon module factory in Aveiro, Portugal, using EPV Solar equipment, and plans...

311

AOS Solar Inc | Open Energy Information  

Open Energy Info (EERE)

AOS Solar Inc Jump to: navigation, search Name: AOS Solar Inc Product: Manufacturer of thin-film silicon-on-glass. References: AOS Solar Inc1 This article is a stub. You can help...

312

Silicone metalization  

DOE Patents [OSTI]

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2006-12-05T23:59:59.000Z

313

Photovoltaic Silicon Cell Basics | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Silicon Cell Basics Silicon Cell Basics Photovoltaic Silicon Cell Basics August 20, 2013 - 2:19pm Addthis Silicon-used to make some the earliest photovoltaic (PV) devices-is still the most popular material for solar cells. Silicon is also the second-most abundant element in the Earth's crust (after oxygen). However, to be useful as a semiconductor material in solar cells, silicon must be refined to a purity of 99.9999%. In single-crystal silicon, the molecular structure-which is the arrangement of atoms in the material-is uniform because the entire structure is grown from the same crystal. This uniformity is ideal for transferring electrons efficiently through the material. To make an effective PV cell, however, silicon has to be "doped" with other elements to make n-type and p-type layers.

314

Cheap solar cells tempt businesses  

Science Journals Connector (OSTI)

... of Valencia in Spain, first heard about perovskites, the latest hope for low-cost solar power, in April last year. Unlike the slabs of purified silicon at the heart ... in April last year. Unlike the slabs of purified silicon at the heart of the solar ...

Richard Van Noorden

2014-09-24T23:59:59.000Z

315

The Silicon Mine | Open Energy Information  

Open Energy Info (EERE)

Mine Mine Jump to: navigation, search Name The Silicon Mine Place Netherlands Sector Solar Product The Silicon Mine (TSM) will produce solar grade polysilicon suitable for the production of wafers or as the base material for the manufacture of solar cells. References The Silicon Mine[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. The Silicon Mine is a company located in Netherlands . References ↑ "The Silicon Mine" Retrieved from "http://en.openei.org/w/index.php?title=The_Silicon_Mine&oldid=352196" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties

316

Solar Energy Materials & Solar Cells 78 (2003) 567595 Low-mobility solar cells: a device physics primer  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 78 (2003) 567­595 Low-mobility solar cells: a device physics, Syracuse, New York 13244-1130, USA Abstract The properties of pin solar cells based on photogeneration for the solar conversion efficiency of amorphous silicon-based cells that are limited by valence bandtail

Schiff, Eric A.

317

Lobbyist Disclosure Form - Silicon Valley | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Lobbyist Disclosure Form - Silicon Valley.pdf More Documents & Publications Lobbyist Disclosure Form - AltEn Lobbyist Disclosure Form - First Solar Interested Parties - Shipp...

318

Submicrometer gratings for solar energy applications  

Science Journals Connector (OSTI)

Diffractive optical structures for increasing the efficiency of crystalline silicon solar cells are discussed. As a consequence of the indirect band gap, light absorption becomes very...

Heine, Claus; Morf, Rudolf H

1995-01-01T23:59:59.000Z

319

Solar Energy Market Forecast | Open Energy Information  

Open Energy Info (EERE)

Solar Energy Market Forecast Solar Energy Market Forecast Jump to: navigation, search Tool Summary LAUNCH TOOL Name: Solar Energy Market Forecast Agency/Company /Organization: United States Department of Energy Sector: Energy Focus Area: Solar Topics: Market analysis, Technology characterizations Resource Type: Publications Website: giffords.house.gov/DOE%20Perspective%20on%20Solar%20Market%20Evolution References: Solar Energy Market Forecast[1] Summary " Energy markets / forecasts DOE Solar America Initiative overview Capital market investments in solar Solar photovoltaic (PV) sector overview PV prices and costs PV market evolution Market evolution considerations Balance of system costs Silicon 'normalization' Solar system value drivers Solar market forecast Additional resources"

320

Matter & Energy Solar Energy  

E-Print Network [OSTI]

See Also: Matter & Energy Solar Energy· Electronics· Materials Science· Earth & Climate Energy and the Environment · Renewable Energy· Environmental Science · Reference Chemical compound· Semiconductor· Gallium at the University of Illinois, the future of solar energy just got brighter. Although silicon is the industry

Rogers, John A.

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Solland Solar Energy BV | Open Energy Information  

Open Energy Info (EERE)

Dutch manufacturer of crystalline silicon back-contact solar cells. References: Solland Solar Energy BV1 This article is a stub. You can help OpenEI by expanding it. Solland...

322

Design Rules for Efficient Organic Solar Cells  

Science Journals Connector (OSTI)

There has been an intensive search for cost-effective photovoltaics since the development of the first solar cells in the 1950s [1-3...]. Among all the alternative technologies to silicon-based pn-junction solar

Z. Zhu; D. Mühlbacher; M. Morana; M. Koppe…

2009-01-01T23:59:59.000Z

323

A Solid Solar-Cell Solution  

Science Journals Connector (OSTI)

A Solid Solar-Cell Solution ... Some three-quarters of electricity-producing rooftop photovoltaic panels and other types of solar arrays are based on crystalline silicon cells, a well-established but expensive technology. ...

MITCH JACOBY

2012-06-11T23:59:59.000Z

324

CVD amorphous silicon solar cells  

SciTech Connect (OSTI)

Development of all-CVD TCO/p-i-n/metal/substrate a-Si devices made by CVD from disilane is reported. The reactor and conditions for depositing device quality CVD a-Si at growth rates up to 10 A/sec are described. Conductivity, optical properties and density of states of CVD i layers are described. Photovoltaic device characteristics of all - CVD and hybrid (CVD/GD) pin and nip devices are compared. Efficiencies up to 4% were achieved. An analysis of collection efficiency indicates a hole ..mu../tau/ of 1 - 4 X 10/sup -9/ cm/sup 2//V. Cell performance is consistent with a series connected double junction model.

Hegedus, S.S.; Baron, B.N.; Rocheleau, R.E.

1984-05-01T23:59:59.000Z

325

High Efficiency Silicon Solar Cells  

Science Journals Connector (OSTI)

Conversion efficiency has emerged as an important contributor to further reducing photovoltaic system cost. This presentation will discuss the various improvements that have increased...

Swanson, Richard

326

Solar Chemical Peculiarities?  

E-Print Network [OSTI]

Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar "analogs", the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel.

Carlos Allende Prieto

2006-12-08T23:59:59.000Z

327

Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells  

E-Print Network [OSTI]

Thin-film silicon solar cell technology," Progress insolar cells: modeling, materials and device technology.technologies competitive with traditional wafer based solar cells,

Deceglie, Michael G.

2014-01-01T23:59:59.000Z

328

E-Print Network 3.0 - advanced technology solar Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

physics. Wafer silicon photovoltaic technology. Survey... Photovoltaics: Advanced Solar Energy Conversion, by M. A. Green (Springer, 2006) Solar Electricity, by T... Spring 2012...

329

Northeast Solar Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Northeast Solar Energy Northeast Solar Energy Research Center (NSERC) A multi-purpose research facility on the BNL campus Solar PV Array Size and Type * ~1.0 MW total - Area 1 sized for testing utility-scale inverters * System voltage level of 1,000V * Connected to BNL electrical distribution system * Capability to test multiple panel technologies with crystalline silicon PV modules making up the bulk of the array * Capability to re-configure the array into

330

Solar Torx New Solar Ventures | Open Energy Information  

Open Energy Info (EERE)

Torx New Solar Ventures Torx New Solar Ventures Jump to: navigation, search Name Solar Torx / New Solar Ventures Place Arizona Product Set up in November 2005 to secure finance for a thin-film amorphous silicon cell and module manufacturing plant, and an associated 300MW power project. No evidence of progress as of June 2008, has probably been abandoned. References Solar Torx / New Solar Ventures[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Torx / New Solar Ventures is a company located in Arizona . References ↑ "Solar Torx / New Solar Ventures" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Torx_New_Solar_Ventures&oldid=351340" Categories:

331

Measurment of Depositing and Bombarding Species Involved in the Plasma Production of Amorphous Silicon and Silicon/Germanium Solar Cells: Annual Technical Report, 1 June 2002 - 31 May 2005  

SciTech Connect (OSTI)

The objective of this study is to measure the molecular species that lead to the growth of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (..mu..c-Si) photovoltaic (PV) devices from RF discharges. Neutral radicals produce most of the film growth during this PV-device production, and, by implication, radicals primarily determine the device structure and electrical characteristics. The most important feature of the present experiment is thus the measurement of neutral-radical fluxes to the substrate. Additional depositing species that can influence film properties are positive ions and silicon-based particles produced by the discharge; we also measure these positive-ion species here. Some studies have already measured some of these radical and positive-ion species in silane and silane/argon discharges, but not for discharge conditions similar to those used to produce most photovoltaic devices. Our objective is to measure all of these species for conditions typically used for device production. In particular, we have studied 13.6 MHz-excited discharges in pure silane and silane/hydrogen vapors.

Gallagher, A.; Rozsa, K.; Horvath, P.; Kujundcik, D.

2006-06-01T23:59:59.000Z

332

Development of an In-line Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells: Final Technical Report, 2 August 2002-15 November 2004  

SciTech Connect (OSTI)

The objective of this subcontract over its two-phase, two-year duration was to design and develop improvements to the existing Sinton Consulting R&D minority-carrier lifetime testers. The improvements enable the possibilities for performing various in-line diagnostics on crystalline silicon wafers and cells for solar cell manufacturing lines. This facilitates manufacturing optimization and improved process control. The scope of work for Phase I was to prototype industrial applications for the improved instruments. A small-sample-head version of the instrument was designed and developed in this effort. This new instrument was complemented by detailed application notes detailing the productive use of minority-carrier lifetime measurements for process optimization and routine process control. In Phase II, the results from the first year were applied to design new instruments for industrial applications. These instruments were then characterized and documented. We report here on four new instruments, each optimized for a specific application as demanded by industrial customers. The documentation for these instruments was very technical and involved considerable R&D. Applications were developed that applied the latest in R&D on industrial silicon materials. By investigating the compromises that would be necessary to measure industrial material directly without the sample preparation that is commonly done for good research, we were able to develop several very innovative applications that can now be done directly in the production line for process control.

Sinton, R. A.

2004-12-01T23:59:59.000Z

333

European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2.4 HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SILICON SOLAR CELLS WITH CELL  

E-Print Network [OSTI]

Energy Corporation ASA, Kjørboveien 29, NO-1337 Sandvika, Norway 3 Institute for Solid State Physics27th European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2 Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany 2 Renewable

334

NANOCOMPOSITE ENABLED SENSITIZED SOLAR CELL  

E-Print Network [OSTI]

technologies. Silicon photovoltaic module cost have continuegeneration photovoltaic panels due to their low cost, easycost-efficient multiple junction solar devices with remarkably high efficiency should be the direction and objective of photovoltaic

Phuyal, Dibya

2012-01-01T23:59:59.000Z

335

Apparatus for obtaining silicon from fluosilicic acid  

DOE Patents [OSTI]

Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

Sanjurjo, Angel (San Jose, CA)

1986-05-20T23:59:59.000Z

336

Project Profile: Development and Productization of High-Efficiency, Low-Cost Building-Integrated PV Shingles Using Monocrystalline Silicon Thin-Film Solar Cells  

Broader source: Energy.gov [DOE]

The Solexel-OC team is developing a BIPV roofing shingle product that includes low-profile solar modules and a unique attachment system that will be fastened directly to the roof and incorporates...

337

Photon Sciences | About Photon Sciences | Solar  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solar Fabrics? Solar Backpacks? Go Organic! Solar Fabrics? Solar Backpacks? Go Organic! « Back Ioana Gearba and Ron Pindak Ioana Gearba (right), a former researcher at the CFN, and Ron Pindak, Physical and Chemical Sciences Division Head at the NSLS, display the enhanced polythiophene blended solar cells. You've probably noticed solar panels sprouting on rooftops in your neighborhood. Solar panels are made out of multiple solar cells, which are commonly manufactured out of silicon, the same material in sand. When sunlight hits a solar panel, electrons in the silicon get agitated and flow through wires built into the panel, making electricity. Solar panels on roofs are now commonplace. But have you spotted any backpacks sporting solar cells? They're made out of organic materials - commonly polymers, or plastics, for absorbing light and transporting

338

Characterization of temperature profile in furnace and solubility of iron in silicon  

E-Print Network [OSTI]

A better understanding of the behavior of impurities, such as iron, in silicon can lead to increases in solar cell efficiency. The purpose of this thesis was to study the behavior of iron in silicon via three sub-tasks: ...

Modi, Vrajesh Y

2011-01-01T23:59:59.000Z

339

A Comparative Study of Quasi-solid Nanoclay Gel Electrolyte and Liquid Electrolyte Dye Sensitized Solar Cells.  

E-Print Network [OSTI]

??Dye sensitized solar cells (DSSCs) are currently being explored as a cheaper alternative to the more common silicon (Si) solar cell technology. In addition to… (more)

Main, Laura

2012-01-01T23:59:59.000Z

340

Automation of a long-term measurement of organic solar cells; Automatisering av en långtidsmätning av organiska solceller.  

E-Print Network [OSTI]

?? Organic solar cells represent a clean and renewable source of energy. They are cheaper and handier than conventional silicon solar cells, but have lower… (more)

Fjodorov, Anton

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface  

SciTech Connect (OSTI)

The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

2010-04-30T23:59:59.000Z

342

CHINT Solar Co Ltd aka Astronergy | Open Energy Information  

Open Energy Info (EERE)

CHINT Solar Co Ltd aka Astronergy CHINT Solar Co Ltd aka Astronergy Jump to: navigation, search Name CHINT Solar Co Ltd (aka Astronergy) Place Hangzhou, Zhejiang Province, China Zip 310052 Sector Solar Product A subsidiary company of CHINT Group, producing multicrystalline and monocrystalline solar cells, modules, thin-film solar cells and PV application products. Coordinates 30.252501°, 120.165024° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":30.252501,"lon":120.165024,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

343

Activ Solar | Open Energy Information  

Open Energy Info (EERE)

Activ Solar Activ Solar Jump to: navigation, search Name Activ Solar Address Vienna, Wipplingerstrasse 35 Place Austria Zip 1010 Sector Solar Product The company's main business areas include production of silicon products and development of large-scale photovoltaic installations. Number of employees 1001-5000 References Activ Solar[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Activ Solar, headquartered in Vienna (Austria), is a global company focused on the development and manufacture of solar based technology. The company's main business areas include production of silicon products and development of large-scale photovoltaic installations. PJSC Semiconductor Plant, based

344

Definition: Solar cell | Open Energy Information  

Open Energy Info (EERE)

Solar cell Solar cell (Redirected from Definition:PV cell) Jump to: navigation, search Dictionary.png Solar cell Converts light into electrical energy. Traditional solar cells are made from silicon; second-generation solar cells (thin-film solar cells) are made from amorphous silicon or nonsilicon materials such as cadmium telluride; and third-generation solar cells are being made from variety of new materials, including solar inks, solar dyes, and conductive plastics.[1][2] View on Wikipedia Wikipedia Definition A solar cell (also called a photovoltaic cell) is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect. It is a form of photoelectric cell (in that its electrical characteristics-e.g. current, voltage, or resistance-vary

345

OPVs and Solar Cells: The Basics | University of Texas Energy...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

environmental crises emanating from greenhouse gas production. Current solar cell technologies are largely silicon-based. Devices used for human energy consumption yield...

346

Structure of All-Polymer Solar Cells Impedes Efficiency  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

thin films of semiconducting polymers as a possible alternative to silicon-based solar cells. Such devices would have the advantages of being cheap to produce,...

347

ELECTRON MICROSCOPY ANALYSIS OF SILICON ISLANDS AND LINE STRUC-TURES FORMED ON SCREEN-PRINTED AL-DOPED P+  

E-Print Network [OSTI]

silicon wafers are mainly used as back surface field (BSF) in p-type crystalline silicon solar cells [1,2] and as rear side emitter in screen-printed back junction n-type crystalline silicon solar cells [3]. From dop in an infrared conveyor belt furnace at 900°C for 13 seconds. In order to investigate the p + surface

348

E-Print Network 3.0 - amorphous-silicon-based thin-film photovoltaic...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

CELLS... . 1. Transmittance modulation spectrum TT for an amorphous silicon-based pin solar cell prepared... . ACKNOWLEDGMENTS This research has been supported through the ......

349

E-Print Network 3.0 - amorphous silicon flat-panel Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with the low cost of amorphous and polycrystalline silicon films on non... , such as solar cells and flat-panel displays, our ACSi technology promises to fundamentally...

350

Solar cell array interconnects  

DOE Patents [OSTI]

Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

1995-11-14T23:59:59.000Z

351

D0 silicon trackers  

SciTech Connect (OSTI)

The present Fermilab D0 silicon microstrip tracker, the silicon microstrip tracker which was designed to replace it, and plans for upgrading the present silicon tracker are described.

W. E. Cooper

2003-12-19T23:59:59.000Z

352

Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467  

SciTech Connect (OSTI)

This book was divided into the following parts: Staebler-Wronski and Fundamental Defect Studies in Amorphous Silicon; The Story of Hydrogen in Amorphous Silicon; Photoelectric Properties of Amorphous Silicon; Deposition and Properties of Microcrystalline Silicon; Deposition Studies for Amorphous Silicon and Related Materials; Solar Cells; Thin-Film Transistors; and Sensors and Novel Device Concepts. Separate abstracts were prepared for most of the papers in the volume.

Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.

1997-07-01T23:59:59.000Z

353

Concentrator silicon cell research  

SciTech Connect (OSTI)

This project continued the developments of high-efficiency silicon concentrator solar cells with the goal of achieving a cell efficiency in the 26 to 27 percent range at a concentration level of 150 suns of greater. The target efficiency was achieved with the new PERL (passivated emitter, rear locally diffused) cell structure, but only at low concentration levels around 20 suns. The PERL structure combines oxide passivation of both top and rear surfaces of the cells with small area contact to heavily doped regions on the top and rear surfaces. Efficiency in the 22 to 23 percent range was also demonstrated for large-area concentrator cells fabricated with the buried contact solar cell processing sequence, either when combined with prismatic covers or with other innovative approaches to reduce top contact shadowing. 19 refs.

Green, M.A.; Wenham, S.R.; Zhang, F.; Zhao, J.; Wang, A. [New South Wales Univ., Kensington (Australia). Solar Photovoltaic Lab.

1992-04-01T23:59:59.000Z

354

Amorphous Silicon  

Broader source: Energy.gov [DOE]

DOE has a proven track record of funding successes in amorphous silicon (a-Si)research. A list of current projects, summary of the benefits, and discussion on the production and manufacturing of...

355

Shanghai Chaori Solar Energy Science Technology Development Co Ltd | Open  

Open Energy Info (EERE)

Shanghai Chaori Solar Energy Science Technology Development Co Ltd Shanghai Chaori Solar Energy Science Technology Development Co Ltd Jump to: navigation, search Name Shanghai Chaori Solar Energy Science & Technology Development Co Ltd Place Shanghai, Shanghai Municipality, China Zip 200063 Sector Solar Product Manufacturer of solar PV cells based on outsourced CRM mono-crystalline and CRM multi-crystalline materials, as well as lighting and other PV systems. Coordinates 31.247709°, 121.472618° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.247709,"lon":121.472618,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

356

Metal Nanoparticles Enhanced Optical Absorption in Thin Film Solar Cells  

Science Journals Connector (OSTI)

The plasmonic enhanced absorption for thin film solar cells with silver nanoparticles (NPs) deposited on top of the amorphous silicon film (a-Si:H) solar cells and embedded inside the...

Xie, Wanlu; Liu, Fang; Qu, Di; Xu, Qi; Huang, Yidong

357

Light harvesting enhancement in solar cells with quasicrystalline plasmonic structures  

Science Journals Connector (OSTI)

Solar cells are important in the area of renewable energies. Since it is expensive to produce solar-grade silicon [Electrochem. Soc. Interface 17, 30 (2008)], especially thin-film...

Bauer, Christina; Giessen, Harald

2013-01-01T23:59:59.000Z

358

Longwei Silicon Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Longwei Silicon Co Ltd Longwei Silicon Co Ltd Jump to: navigation, search Name Longwei Silicon Co Ltd Place Liancheng, Fujian Province, China Sector Solar Product A Chinese sillicon metal producer who also produce 4N-6N silicon for solar use. Coordinates 21.61801°, 110.282799° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":21.61801,"lon":110.282799,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

359

RSI Silicon Products LLC | Open Energy Information  

Open Energy Info (EERE)

RSI Silicon Products LLC RSI Silicon Products LLC Jump to: navigation, search Name RSI Silicon Products LLC Place Easton, Massachusetts Zip 18040 Sector Solar Product Early-stage startup which is developing a process for solar-grade silicon manufacture at low energy intensity, spinoff from MIT. Coordinates 47.237806°, -121.179542° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":47.237806,"lon":-121.179542,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

360

6N Silicon Inc | Open Energy Information  

Open Energy Info (EERE)

Silicon Inc Silicon Inc Jump to: navigation, search Name 6N Silicon Inc Place Mississauga, Ontario, Canada Zip L5T 1E6 Sector Solar Product Canadian manufactuer of upgraded metallurgical silicon for solar industry. Coordinates 43.588285°, -79.643724° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.588285,"lon":-79.643724,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Shell Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name Shell Solar Place The Hague, Netherlands Zip 2501 AN Sector Solar Product Shell Solar is developing non-crystalline PV technology, notably CIS, following the sale of nearly all its crystalline silicon PV operations to SolarWorld in early 2006. References Shell Solar[1] Information About Partnership with NREL Partnership with NREL Yes Partnership Type Uses NREL Research Facilities Partnering Center within NREL National Center for Photovoltaics Partnership Year 2006 LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Shell Solar is a company located in The Hague, Netherlands . References ↑ "Shell Solar" Retrieved from

362

Device Architecture Simplification of Laser Pattering in High-Volume Crystalline Silicon Solar Cell Fabrication using Intensive Computation for Design and Optimization  

SciTech Connect (OSTI)

Prices of Si based solar modules have been continuously declining in recent years. Goodrich is pointing out that a significant portion of these cost reductions have come about due to ?economies of scale? benefits, but there is a point of diminishing returns when trying to lower cost by simply expanding production capacity [1]. Developing innovative high volume production technologies resulting in an increase of conversion efficiency without adding significant production cost will be necessary to continue the projected cost reductions. The Foundational Program to Advance Cell Efficiency (F-PACE) is seeking to achieve this by closing the PV efficiency gap between theoretical achievable maximum conversion efficiency - 29% for c-Si - and the current typical production - 18.5% for a typical full area back contact c-Si Solar cell ? while targeting a module cost of $0.50/Watt . The research conducted by SolarWorldUSA and it?s partners within the FPACE framework focused on the development of a Hybrid metal-wrap-through (MWT) and laser-ablated PERC solar cell design employing a extrusion metallization scheme to achieve >20% efficient devices. The project team was able to simulate, develop and demonstrate the technologies necessary to build p-type MWT PERC cells with extruded front contacts. Conversion efficiencies approaching 20% were demonstrated and a path for further efficiency improvements identified. A detailed cost of ownership calculation for such a device was based on a NREL cost model and is predicting a $/Watt cost below 85 cents on a 180 micron substrate. Several completed or planned publications by SolarWorldUSA and our partners are based on the research conducted within this project and are adding to a better understanding of the involved technologies and materials. Several aspects and technologies of the proposed device have been assessed in regards to technical effectiveness and economic feasibility. It has been shown in a pilot demonstration with wafer thicknesses down to 120 micron that further wafer thickness reduction is only economically viable if handling and contact formation limitations are addressed simultaneously. Furthermore the project partners assessed and demonstrated the feasibility of processing wafers with vias connecting front and back sides through a PERC cell process and aligning and connecting those vias with a non-contact metallization. A close cooperation between industry and institutes of higher education in the Pacific Northwest as shown in this project is of direct benefit to the public and is contributing to the education of the next generation of PV engineers and scientist.

Grupp Mueller, Guenther [SolarWorld; Herfurth, Hans [Fraunhofer CLT; Dunham, Scott [University of Washington; Xu, Baomin [PARC

2013-11-15T23:59:59.000Z

363

Stochastic modelling of silicon nanoparticle synthesis  

E-Print Network [OSTI]

distribution–Part 1: Experimental investigations”, pp. 998– 1007, Copyright (2010), with permission from Elsevier. by thermal, laser or microwave radiation sources [22, 72, 103]. The decom- position of silane forms reactive silicon hydrides, which combine... into applications of silicon nanoparticles in photovoltaics has been conducted. As the quantum confinement effects of a particle are strongly dependent on its size and structure, it may be possible to tune a photovoltaic cell to better match solar emission than...

Menz, William Jefferson

2014-01-07T23:59:59.000Z

364

Buckeye Silicon | Open Energy Information  

Open Energy Info (EERE)

Silicon Silicon Jump to: navigation, search Name Buckeye Silicon Address 2600 Dorr Street - Suite 1070 Place Toledo, Ohio Zip 43606 Sector Renewable Energy, Services, Solar Product Consulting; Manufacturing;Raw materials/extraction;Refining;Research and development Website http://www.sphereenergy.net Coordinates 41.6529122°, -83.6066466° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.6529122,"lon":-83.6066466,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

365

Hydrogenated amorphous silicon films prepared by glow discharge of disilane  

SciTech Connect (OSTI)

This report describes the results of an investigation of the properties of hydrogenated amorphous silicon films and the efficiency of amorphous silicon solar cells deposited from disilane at rates of 1.5 nanometers/second or greater. The study was divided into two parts, investigation of basic materials properties of hydrogenated amorphous silicon thin films and the fabrication of glass-P-I-N-metal solar cells. The thin film materials properties investigated included the dark conductivity, photoconductivity, dihydride/monohydride concentration ratio, activation energy, and mobility-lifetime product. Hydrogenated amorphous silicon solar cells were fabricated with an intrinsic layer which was deposited at 1.5 nanometers/second. The absolute and reverse bias quantum yields were measured and solar cell efficiencies of 5% were achieved. Attempts to increase the efficiency by reverse bias annealing are also reported. 7 refs., 27 figs.

Wiesmann, H.J. (UHT Corp., Dobbs Ferry, NY (USA))

1990-01-01T23:59:59.000Z

366

Schmid Silicon Technology GmbH SST | Open Energy Information  

Open Energy Info (EERE)

to: navigation, search Name: Schmid Silicon Technology GmbH (SST) Place: Freudenstadt, Germany Zip: D-72250 Sector: Solar Product: Germany-based technology provider for high-end...

367

Process and apparatus for casting multiple silicon wafer articles  

DOE Patents [OSTI]

Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

Nanis, Leonard (Palo Alto, CA)

1992-05-05T23:59:59.000Z

368

Deposition of amorphous silicon solar cells at high rates by glow discharge of disilane. Final subcontract report, January 1985-July 1986  

SciTech Connect (OSTI)

This report summarizes the results of recent a-Si:H thin-film photovoltaic (PV) materials research. The work reported here concerned the fabrication of a-Si:H solar cells at high deposition rates using disilane. This task required the construction of a new, dual-chamber deposition system to control the dopant profile between the heavily doped p-type layer and the undoped (intrinsic) layer in the solar cell structure. Conditions were sought that would produce high-quality films at a high deposition rate. Complete photovoltaic devices were fabricated. In disilane-deposited material, the optimum substrate temperature is much higher than in silane material, presumably because it is harder to eliminate the excess hydrogen in the former. The efficiency of the best disilane cell was about 7%, with an open-circuit voltage of 0.80 V, a short-circuit current density of 14.7 mA cm/sup -2/ and a fill factor of 0.59. The most likely area for improvement is in the voltage, where values as high as 0.9 V should be possible with careful adjustment of the cell structure.

Vanier, P.E.

1986-08-01T23:59:59.000Z

369

Chemical technology news from across RSC Publishing. Printing solar panels  

E-Print Network [OSTI]

Publishing Chemical technology news from across RSC Publishing. Printing solar panels 22 January size) silicon microcells that connect together to form flexible solar panels. By stamping hundreds solar panels 2/8/2010http://www.rsc.org/Publishing/ChemTech/Volume/2010/02/printing_solar.asp #12;Page 2

Rogers, John A.

370

Definition: Solar cell | Open Energy Information  

Open Energy Info (EERE)

cell cell Jump to: navigation, search Dictionary.png Solar cell Converts light into electrical energy. Traditional solar cells are made from silicon; second-generation solar cells (thin-film solar cells) are made from amorphous silicon or nonsilicon materials such as cadmium telluride; and third-generation solar cells are being made from variety of new materials, including solar inks, solar dyes, and conductive plastics.[1][2] View on Wikipedia Wikipedia Definition A solar cell (also called a photovoltaic cell) is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect. It is a form of photoelectric cell (in that its electrical characteristics-e.g. current, voltage, or resistance-vary when light is incident upon it) which, when exposed to light, can generate

371

Solidification of polycrystalline silicon ingots : simulation and characterization of the microstructure  

E-Print Network [OSTI]

.90 1. Introduction. The most important development in silicon solar cells is due to the substitution solidification of poly- crystalline silicon (POLYX). The capacity of the initial furnace was about 1 kg and today the silicon in a graphite crucible using induction heating furnace. The crucible is well insulated to reduce

Paris-Sud XI, Université de

372

Amorphous Silicon: The other Silicon J.C. Sturm, Y. Huang, L. Han, T. Liu, *B. Hekmatshoar,  

E-Print Network [OSTI]

for cost reduction, and crystalline silicon- amorphous silicon interfaces for high performance solar cells for analog and high duty cycle applications, flexible substrates for products with new form factors, printing Fig. 2. Pixel circuits for (a) active matrix liquid crystal display and (b) active matrix organic

373

Solar Circuitry  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solar Circuitry" with the Solar Powered Energy Kit Curriculum: Solar Power- (lightelectromagnetic radiation, electricity, circuitry, efficiency, energy transformation, subatomic...

374

Application of lasers in solar cell technologies  

Science Journals Connector (OSTI)

The possibilities for applying lasers to the fabrication of solar cells (the laser texturing of silicon surfaces and pulsed laser deposition of indium tin oxide (ITO) thin films) are demonstrated.

D. A. Zuev; A. A. Lotin; O. A. Novodvorsky…

2012-10-01T23:59:59.000Z

375

Signet Solar Inc | Open Energy Information  

Open Energy Info (EERE)

Palo Alto, California Zip: 94306 Product: US-based manufacturer of amorphous silicon thin-film modules. References: Signet Solar Inc1 This article is a stub. You can help OpenEI...

376

T Solar Global SA | Open Energy Information  

Open Energy Info (EERE)

T-Solar Global SA Place: Madrid, Spain Zip: 28042 Product: Spain-based thin-film silicon PV cell and module maker, using Applied Materials equipment. The firm is also a major...

377

Terra Solar Global Inc | Open Energy Information  

Open Energy Info (EERE)

Global Inc Jump to: navigation, search Name: Terra Solar Global Inc Place: New York, New York Zip: 10111-2000 Product: US-based manufacturer of amorphous silicon (a-Si) thin-film...

378

Synthesis and characterization of a photosensitive interface for hydrogen generation: Chemically modified p-type semiconducting silicon photocathodes  

Science Journals Connector (OSTI)

...Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139. | Journal Article...silicon photocathodes (solar energy/photoelectrochemistry...Department of Chemistry, Massachusetts Institute of Technology...

Dana C. Bookbinder; James A. Bruce; Raymond N. Dominey; Nathan S. Lewis; Mark S. Wrighton

1980-01-01T23:59:59.000Z

379

Electroabsorption measurements and built-in potentials in amorphous silicongermanium solar cells  

E-Print Network [OSTI]

-1130 S. Guha and J. Yang United Solar Systems Corporation, 1100 West Maple Road, Troy, Michigan 48084Electroabsorption measurements and built-in potentials in amorphous silicon­germanium solar cells J spectra in n-i-p solar cells with hydrogenated amorphous silicon­germanium alloy absorber layers. At lower

Schiff, Eric A.

380

Measurement of light capture in solar cells from silver- and tin-plated patterned bus bars  

E-Print Network [OSTI]

Bus bars on solar cells shade silicon from light. When the bus bars are patterned, they can reflect light back onto the silicon using total internal reflection. These patterned bus bars are tin plated and produce 1-2.5% ...

Winiarz, Christine Eve

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986  

SciTech Connect (OSTI)

This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

1988-09-01T23:59:59.000Z

382

GT Solar Technologies formerly GT Equipment Technologies | Open Energy  

Open Energy Info (EERE)

GT Solar Technologies formerly GT Equipment Technologies GT Solar Technologies formerly GT Equipment Technologies Jump to: navigation, search Name GT Solar Technologies (formerly GT Equipment Technologies) Place Merrimack, New Hampshire Zip 3054 Product US-based manufacturer of turnkey multicrystalline PV wafer, cell, and module fabrication lines; also offers EFG and dentritic growth furnaces. Coordinates 42.872517°, -71.490603° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.872517,"lon":-71.490603,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

383

Silicon Border Development LLC | Open Energy Information  

Open Energy Info (EERE)

Silicon Border Development LLC Silicon Border Development LLC Jump to: navigation, search Name Silicon Border Development LLC Place Poway, California Zip 92064 Sector Solar Product US-based developer of industrial parks with a focus on high-technology industry such as semiconductors and solar. Coordinates 32.95459°, -117.041984° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.95459,"lon":-117.041984,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

384

Korea Silicon Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Silicon Co Ltd Silicon Co Ltd Jump to: navigation, search Name Korea Silicon Co Ltd Place Seongnam, Gyeonggi-do, Korea (Republic) Sector Solar Product Korean manufacturer planning to output polysilicon, ingots and wafers for the solar industry. Coordinates 37.397652°, 127.115189° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.397652,"lon":127.115189,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

385

Fuyuan Silicon Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Fuyuan Silicon Co Ltd Fuyuan Silicon Co Ltd Jump to: navigation, search Name Fuyuan Silicon Co Ltd Place Baishan, Jilin Province, China Sector Solar Product A Chinese solar-grade polysilicon producer using metallurgical method. Coordinates 42.088902°, 127.218193° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.088902,"lon":127.218193,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

386

Anomalous Hysteresis in Perovskite Solar Cells  

Science Journals Connector (OSTI)

Anomalous Hysteresis in Perovskite Solar Cells ... Even for silicon solar cells, hysteresis in the current-voltage curves can occur if the bias is swept extremely fast, with complete scans performed in less than 2 to 44 ms depending on the precise cell architecture. ... We will discuss the three predominant perovskite solar-cell architectures in this letter: (i) planar heterojunction solar cells with no mesoporous oxide,(7, 17) (ii) perovskite-sensitized solar cells fabricated on mesoporous TiO2,(1, 3) and (iii) meso-superstrutured solar cells (MSSCs) which employ mesoporous Al2O3 as an inert scaffold in place of the TiO2. ...

Henry J. Snaith; Antonio Abate; James M. Ball; Giles E. Eperon; Tomas Leijtens; Nakita K. Noel; Samuel D. Stranks; Jacob Tse-Wei Wang; Konrad Wojciechowski; Wei Zhang

2014-03-24T23:59:59.000Z

387

Process and apparatus for obtaining silicon from fluosilicic acid  

DOE Patents [OSTI]

Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

Sanjurjo, Angel (San Jose, CA)

1988-06-28T23:59:59.000Z

388

Green Organic Solar Cells from a Water Soluble Polymer and Nancrystalline TiO2.  

E-Print Network [OSTI]

??The cost of the present generation of inorganic silicon solar cells is very high and further breakthroughs in cost and efficiency using traditional materials are… (more)

Qiao, Qiquan

2008-01-01T23:59:59.000Z

389

NREL: News Feature - Crystal Solar and NREL Team Up to Cut Costs  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A faster, cheaper way to manufacture silicon solar cells, partially funded by the Energy Department and fine-tuned at its National Renewable Energy Laboratory (NREL), has won...

390

E-Print Network 3.0 - analyzing solar reflective Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Market Studies Collection: Power Transmission, Distribution and Plants 3 SIMULATION OF LIGHT IN-COUPLING AT OBLIQUE ANGLES IN THIN-FILM SILICON SOLAR CELLS Summary: roughness in...

391

Solar Manufacturing Technology 2  

Broader source: Energy.gov [DOE]

The PV awards span the supply chain from novel methods to make silicon wafers, to advanced cell and metallization processes, to innovative module packaging and processing. The CSP award demonstrates manufacturability of an innovative CSP reflective-trough receiver. The first round of the SolarMat program was launched in September 2013 supporting five projects. The second round, announced on October 22, 2014, funds ten photovoltaics (PV) and concentrating solar power (CSP) projects that focus on driving down the cost of manufacturing and implementing efficiency-increasing technology in manufacturing processes.

392

NREL: News - Solar Research Earns Three Prestigious R&D 100 Awards  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

R&D 100 Awards June 22, 2011 A technique to turn silicon into ink, a faster way to assess solar cells, and a better furnace for heating solar cells - all developed at the U.S....

393

Fabrication of a luminescent solar concentrator that minimizes self-absorption losses using inter-chromophore energy transfer  

E-Print Network [OSTI]

The projected need for carbon-free power during this century is immense. Solar power offers the largest resource base to supply this need, but in light of recent silicon shortages, it is an open question whether silicon ...

Currie, Michael James

2007-01-01T23:59:59.000Z

394

NREL: Photovoltaics Research - Silicon Materials and Devices R&D  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Silicon Materials and Devices R&D Silicon Materials and Devices R&D R&D 100 Awards Since 2010, we have won three R&D 100 Awards. Flash Quantum Efficiency (Flash QE) System for Solar Cells Innovalight Silicon Ink Process Low-Cost Black Silicon Etching Process Graphic of three layers. The bottom layer, called inexpensive substrate, is white. Middle dark blue layer is called the seed. Top light blue layer has the text epi c-Si absorber. Schematic diagram of the film crystal silicon solar cell. A high-quality crystal silicon absorber is grown epitaxially on a seed layer applied to an inexpensive foreign substrate (e.g., display glass or rolled metal foil). At NREL, we are developing various emitter, back-surface field, and light-trapping strategies. NREL has world-leading research capabilities and expertise in silicon

395

Simulations of solar cell absorption enhancement using resonant modes  

E-Print Network [OSTI]

Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array Jonathan Grandidier Michael G. Deceglie Dennis M. Callahan Harry A. Atwater #12;Simulations of solar cell for enhancing the absorption of thin-film amorphous silicon solar cells using periodic arrangements of resonant

Grandidier, Jonathan

396

Photosymbiotic giant clams are transformers of solar flux  

Science Journals Connector (OSTI)

...spatially efficient system for solar energy. The highly evolved three-dimensional...materials and more spatially efficient solar production of algal biofuels...silicon wafer-based photovoltaic panels do not change with solar flux, so there is a less direct...

2014-01-01T23:59:59.000Z

397

Front contact solar cell with formed emitter  

SciTech Connect (OSTI)

A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

Cousins, Peter John

2014-11-04T23:59:59.000Z

398

Front contact solar cell with formed emitter  

DOE Patents [OSTI]

A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

Cousins, Peter John (Menlo Park, CA)

2012-07-17T23:59:59.000Z

399

Performance Testing using Silicon Devices - Analysis of Accuracy: Preprint  

SciTech Connect (OSTI)

Accurately determining PV module performance in the field requires accurate measurements of solar irradiance reaching the PV panel (i.e., Plane-of-Array - POA Irradiance) with known measurement uncertainty. Pyranometers are commonly based on thermopile or silicon photodiode detectors. Silicon detectors, including PV reference cells, are an attractive choice for reasons that include faster time response (10 us) than thermopile detectors (1 s to 5 s), lower cost and maintenance. The main drawback of silicon detectors is their limited spectral response. Therefore, to determine broadband POA solar irradiance, a pyranometer calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under clear-sky conditions with respect to a broadband reference radiometer. The pyranometer is then used for various scenarios including varying airmass, panel orientation and atmospheric conditions. This would not be an issue if all irradiance wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately, the scattering and absorption signature varies widely with wavelength and the calibration factor for the silicon photodiode pyranometer is not appropriate for other conditions. This paper reviews the issues that will arise from the use of silicon detectors for PV performance measurement in the field based on measurements from a group of pyranometers mounted on a 1-axis solar tracker. Also we will present a comparison of simultaneous spectral and broadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.

Sengupta, M.; Gotseff, P.; Myers, D.; Stoffel, T.

2012-06-01T23:59:59.000Z

400

Light-induced water oxidation at silicon electrodes functionalized with a cobalt oxygen-evolving catalyst  

Science Journals Connector (OSTI)

...Mechanical Engineering, Massachusetts Institute of Technology...Integrating a silicon solar cell with a recently...voltage generated by the solar cell to be utilized...of inexpensive direct solar-to-fuel energy conversion...Department of Chemistry, Massachusetts Institute of Technology...

Joep J. H. Pijpers; Mark T. Winkler; Yogesh Surendranath; Tonio Buonassisi; Daniel G. Nocera

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Light-induced degradation at the silicon/silicon dioxide interface  

SciTech Connect (OSTI)

Single-crystal silicon point-contact solar cells show a degradation in their efficiency after being exposed to concentrated sunlight. This change has been linked to an increase in the surface recombination velocity. A similar effect is produced by carrier injection under forward bias. The annealing kinetics, the role of ultraviolet light, and possible causes for the creation of surface states are discussed.

Gruenbaum, P.E.; Sinton, R.A.; Swanson, R.M.

1988-04-25T23:59:59.000Z

402

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A substrate is described for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3{times}10{sup {minus}3} ohm-cm. 4 figs.

Ciszek, T.F.

1998-07-28T23:59:59.000Z

403

Accurate performance measurement of silicon solar cells  

E-Print Network [OSTI]

Shepard for electronics advice. I would like to acknowledge the Energy Research & Development Corporation uncertainty. For routine measurement of large numbers of sola

404

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell  

E-Print Network [OSTI]

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell J. Grandidier on top of a solar cell can enhance light absorption and therefore increase its efficiency. Freely photocurrent of the solar cell. On a typical thin film amorphous silicon solar cell, a parametric analysis

Atwater, Harry

405

Phoenix Silicon International Corp Psi | Open Energy Information  

Open Energy Info (EERE)

Phoenix Silicon International Corp Psi Phoenix Silicon International Corp Psi Jump to: navigation, search Name Phoenix Silicon International Corp (Psi) Place Hsinchu, Taiwan Zip 300 Sector Solar Product Taiwan-based silicon recycler and manufacturer of wafers to the semiconductor and solar industries; also makes lithium-ion batteries. Coordinates 24.69389°, 121.148064° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":24.69389,"lon":121.148064,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

406

Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment  

DOE Patents [OSTI]

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

1982-01-01T23:59:59.000Z

407

Elkem Solar | Open Energy Information  

Open Energy Info (EERE)

Elkem Solar Elkem Solar Jump to: navigation, search Name Elkem Solar Place Oslo, Norway Zip 303 Sector Solar Product Norwegian manufacturer of solar grade silicon that uses metallurgical process. Coordinates 59.91228°, 10.74998° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":59.91228,"lon":10.74998,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

408

Amorphous and microcrystalline silicon technology -- 1998  

SciTech Connect (OSTI)

Although this new volume from MRS is the 16th in a long-standing and successful series, the focus is no longer limited to hydrogenated amorphous silicon (a-Si:H). The distinction between short- and medium-range order, and between homogeneous and heterogeneous semiconductor materials, is indeed too difficult to maintain. Instead, the volume covers amorphous and microcrystalline silicon from materials physics to new applications. Papers from a joint session with a symposium on ``Flat-Panel Display Materials and Large-Area Processes`` are included. The volume also features special focused sessions on heterogeneous materials, color sensors and radiation imaging, and parameter extraction and device modeling. Topics include: amorphous and polycrystalline thin-film transistors; solar cells; color and X-ray sensors, novel devices, luminescence and sensitization; device modeling and parameter extraction; growth, alloys and clathrates; metastability, hydrogen, atomic and electronic structure; defects and charge transport; and heterogeneous silicon--formation, properties and devices. It includes 152 papers.

Schropp, R. [ed.] [Utrecht Univ. (Netherlands); Branz, H.M. [ed.] [National Renewable Energy Lab., Golden, CO (United States); Shimizu, Isamu [ed.] [Tokyo Inst. of Tech. (Japan); Wagner, S. [ed.] [Princeton Univ., NJ (United States); Hack, M. [ed.

1999-08-01T23:59:59.000Z

409

Advanced silicon photonic modulators  

E-Print Network [OSTI]

Various electrical and optical schemes used in Mach-Zehnder (MZ) silicon plasma dispersion effect modulators are explored. A rib waveguide reverse biased silicon diode modulator is designed, tested and found to operate at ...

Sorace, Cheryl M

2010-01-01T23:59:59.000Z

410

Innovation Conditions in the Case of Solar Power Generation  

Science Journals Connector (OSTI)

In 1954 Bell Laboratories (USA) unveiled the first silicon solar cell – the USA is thus known as ... result of the costs involved, the new technology was primarily used in space travel in ... satellite (Vanguard ...

Prof. Dr. Elke Bruns; Dr. Dörte Ohlhorst…

2011-01-01T23:59:59.000Z

411

Sandia National Laboratories: grid-tied solar inverters  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

solar inverters Sandia, DOE Energy Storage Program, GeneSiC Semiconductor, U.S. Army ARDEC: Ultra-High-Voltage Silicon Carbide Thyristors On March 29, 2013, in Capabilities,...

412

Solar generator performance with load matching to water electrolysis  

Science Journals Connector (OSTI)

A 7 W generator, based on monocrystalline silicon solar cells, was directly wired to an electronic load, simulating the current-voltage characteristic of an advanced water electrolyser. System performance was ...

K. Freudenberg

1982-08-01T23:59:59.000Z

413

NREL Core Program (NCPV), Session: Film Silicon (Presentation)  

SciTech Connect (OSTI)

This project supports the Solar America Initiative by: R and D that contributes to goal of grid parity by 2015; research to fill the industry R and D pipeline for next-generation low-cost scalable products; development of industry collaborative research; and improvement of NREL tools and capabilities for film silicon research. The project addresses both parts of film silicon roadmap: (1) amorphous-silicon-based thin film PV--amorphous and nanocrystalline materials, present '2nd generation' technology, 4% of world PV sales in 2007; (2) advanced R and D toward film crystal silicon--definition, large-grained or single-crystal silicon < 100 {micro}m thick; 3-8 year horizon; and goal of reaching 15% cells at area costs approaching thin films.

Branz, H. M.

2008-04-01T23:59:59.000Z

414

SunShot Initiative: Dye-Sensitized Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Dye-Sensitized Solar Cells to Dye-Sensitized Solar Cells to someone by E-mail Share SunShot Initiative: Dye-Sensitized Solar Cells on Facebook Tweet about SunShot Initiative: Dye-Sensitized Solar Cells on Twitter Bookmark SunShot Initiative: Dye-Sensitized Solar Cells on Google Bookmark SunShot Initiative: Dye-Sensitized Solar Cells on Delicious Rank SunShot Initiative: Dye-Sensitized Solar Cells on Digg Find More places to share SunShot Initiative: Dye-Sensitized Solar Cells on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Dye-Sensitized Solar Cells Graphic showing the seven layers of a dye-sensitized PV cell: electrode, hole conductor, dope, TiO2, blocking layer, transparent conductive oxide, and glass.

415

Solar Cells, 14 (1985) 289 -291 289 Short Communication  

E-Print Network [OSTI]

for CdS/CuInSe2 thin film solar cells by electron beam assisted chemical vapor deposition B. J. STANBERYSolar Cells, 14 (1985) 289 - 291 289 Short Communication Silicon nitride anti-reflection coatings; accepted January 2, 1985) The electron beam assisted chemical vapor deposition of silicon nitride anti

Rocca, Jorge J.

416

The Focusing Optics x-ray Solar Imager: FOXSI Sam Kruckera,b, Steven Christec, Lindsay Glesenera,d, Shin-nosuke Ishikawaa, Stephen  

E-Print Network [OSTI]

. Today's leading solar HXR instrument, the Reuven Ramaty High Energy Solar Spectroscopic Imager (RHESSI. These limitations make it difficult to study faint x-ray sources in the solar corona which are crucial, solar physics, solar flares, silicon strip detectors, grazing-incidence optics, high-energy x-ray optics

California at Berkeley, University of

417

Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers  

SciTech Connect (OSTI)

Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

Myers, D. R.

2011-01-01T23:59:59.000Z

418

Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers: Preprint  

SciTech Connect (OSTI)

Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

Myers, D. R.

2011-04-01T23:59:59.000Z

419

Solar Easements  

Broader source: Energy.gov [DOE]

New Jersey law provides for the creation of solar easements to ensure that proper sunlight is available to those who operate solar-energy systems. The term "solar energy device" is not defined by...

420

Solar Easements  

Broader source: Energy.gov [DOE]

Virginia's solar easement law is similar to those in effect in other states. The Virginia Solar Easements Act of 1978 allows property owners to create binding solar easements for the purpose of...

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

A solar module fabrication process for HALE solar electric UAVs  

SciTech Connect (OSTI)

We describe a fabrication process used to manufacture high power-to-weight-ratio flexible solar array modules for use on high-altitude-long-endurance (HALE) solar-electric unmanned air vehicles (UAVs). These modules have achieved power-to-weight ratios of 315 and 396 W/kg for 150{mu}m-thick monofacial and 110{mu}m-thick bifacial silicon solar cells, respectively. These calculations reflect average module efficiencies of 15.3% (150{mu}m) and 14.7% (110{mu}m) obtained from electrical tests performed by Spectrolab, Inc. under AMO global conditions at 25{degrees}C, and include weight contributions from all module components (solar cells, lamination material, bypass diodes, interconnect wires, and adhesive tape used to attach the modules to the wing). The fabrication, testing, and performance of 32 m{sup 2} of these modules will be described.

Carey, P.G.; Aceves, R.C.; Colella, N.J.; Williams, K.A. [Lawrence Livermore National Lab., CA (United States); Sinton, R.A. [Private Consultant, San Jose, CA (United States); Glenn, G.S. [Spectrolab, Inc., Sylmar, CA (United States)

1994-12-12T23:59:59.000Z

422

Innovative Systems Engineering Solar LLC ISE Solar LLC | Open Energy  

Open Energy Info (EERE)

Solar LLC ISE Solar LLC Solar LLC ISE Solar LLC Jump to: navigation, search Name Innovative Systems Engineering Solar LLC (ISE Solar LLC) Place Warminster, Pennsylvania Zip 18974-1454 Sector Solar Product US-based manufacturer of vacuum deposition equipment for thin-film amorphous silicon products; offers management and operation of thin-film solar plants. Coordinates 40.205459°, -75.100077° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.205459,"lon":-75.100077,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

423

Superlattice cascade solar cell  

SciTech Connect (OSTI)

This paper reports progress toward realization of a new cascade solar cell structure whose chief advantages over other present concepts are: use of silicon for the substrate and low bandgap cell; avoidance of the necessity of lattice matching; and incorporation of a GaAs/GaP superlattice to enhance efficiency and provide a low-resistance connecting junction. Details of the design and operation of an OMCVD system for growing this structure are presented. Results of experiments to optimize layer thickness, compositional uniformity, and surface morphology are described.

Wanlass, M.W.; Blakeslee, A.E.

1982-09-01T23:59:59.000Z

424

Spin-dependent processes in amorphous silicon-rich silicon-nitride S.-Y. Lee,1  

E-Print Network [OSTI]

diodes9 and a-Si:H solar cells.10 Fol- lowing coherent manipulation of paramagnetic centers, tran- sient-band , TSAMPLE=15 K. Dark and illuminated IV curves of the p-i-n devices were measured at room temperature and T amorphous silicon nitride a-SiNx:H has been used widely as a dielectric for thin-film transistors,1 solar

McCamey, Dane

425

Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft for  

E-Print Network [OSTI]

Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft- This paper presents an energy-harvesting system consisting of amorphous-silicon (a-Si) solar cells and thin of the energy-harvesting system. The solar module consists of solar cells in series operating at an output

426

Toward High-Performance Organic-Inorganic Hybrid Solar Cells: Bringing Conjugated Polymers and Inorganic Nanocrystals in Close  

E-Print Network [OSTI]

to traditional silicon solar cells due to the capacity of producing high- efficiency solar energy in a cost these advantages and progress, organic-inorganic hybrid solar cells still exhibit much lower PCEs (iToward High-Performance Organic-Inorganic Hybrid Solar Cells: Bringing Conjugated Polymers

Lin, Zhiqun

427

25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2CO.4.3 IMPACT OF LATERAL VARIATIONS ON THE SOLAR CELL EFFICIENCY  

E-Print Network [OSTI]

analyze various monocrystalline silicon solar cells. The light-IV curves around the maximum power point.3 IMPACT OF LATERAL VARIATIONS ON THE SOLAR CELL EFFICIENCY David Hinken, Karsten Bothe and Rolf Brendel-dimensional approach to calculate the impact of local parameters on the global solar cell efficiency. The presented

428

Community Shared Solar with Solarize  

Broader source: Energy.gov [DOE]

An overview of the concept behind The Solarize Guidebook, which offers neighborhoods a plan for getting volume discounts when making group purchases of rooftop solar energy systems.

429

GSMSolar formerly Shanghai General Silicon Material Co Ltd | Open Energy  

Open Energy Info (EERE)

GSMSolar formerly Shanghai General Silicon Material Co Ltd GSMSolar formerly Shanghai General Silicon Material Co Ltd Jump to: navigation, search Name GSMSolar (formerly Shanghai General Silicon Material Co Ltd) Place Kunshan, Jiangsu Province, China Zip 215300 Sector Solar Product Chinese solar ingot and wafer manufacturer. Coordinates 31.375509°, 120.949219° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.375509,"lon":120.949219,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

430

Tritium in amorphous silicon  

SciTech Connect (OSTI)

Preliminary results on infrared and luminescence measurements of tritium incorporated amorphous silicon are reported. Tritium is an unstable isotope that readily substitutes hydrogen in the amorphous silicon network. Due to its greater mass, bonded tritium is found to introduce new stretching modes in the infrared spectrum. Inelastic collisions between the beta particles, produced as a result of tritium decay, and the amorphous silicon network, results in the generation of excess electron-hole pairs. Radiative recombination of these carriers is observed.

Sidhu, L.S.; Kosteski, T.; O`Leary, S.K.; Gaspari, F.; Zukotynski, S. [Univ. of Toronto, Ontario (Canada). Dept. of Electrical and Computer Engineering; Kherani, N.P.; Shmadya, W. [Ontario Hydro Technologies, Toronto, Ontario (Canada)

1996-12-31T23:59:59.000Z

431

Functionalized Silicone Nanospheres: Synthesis, Transition Metal...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Functionalized Silicone Nanospheres: Synthesis, Transition Metal Immobilization, and Catalytic Applications. Functionalized Silicone Nanospheres: Synthesis, Transition Metal...

432

Highly Efficient Silicon Light Emitting Diode  

E-Print Network [OSTI]

silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap

Leminh Holleman Wallinga; P. Leminh; J. Holleman; H. Wallinga

2000-01-01T23:59:59.000Z

433

Philadelphia, Pennsylvania: Solar in Action (Brochure), Solar...  

Broader source: Energy.gov (indexed) [DOE]

(Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Boston Massachusetts: Solar in Action (Brochure), Solar America Cities, Energy Efficiency &...

434

Micromachined silicon electrostatic chuck  

DOE Patents [OSTI]

An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

Anderson, R.A.; Seager, C.H.

1996-12-10T23:59:59.000Z

435

Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach  

E-Print Network [OSTI]

´ a , Rolf Brendel a,b a Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal Doping (LTD) as well as standard tube furnace phosphorus diffusion. We find a considerably smaller J0 for process optimization. & 2012 Elsevier B.V. All rights reserved. 1. Introduction In silicon solar cells

436

Solar Keymark Testing of Solar Thermal Products  

Science Journals Connector (OSTI)

The Solar Keymark is the official CEN certification scheme for thermal solar collectors and factory made thermal solar systems. The Solar Keymark requires that the products fulfil the...

Harald Drück; Stephan Fischer…

2009-01-01T23:59:59.000Z

437

III-V Growth on Silicon Toward a Multijunction Cell  

SciTech Connect (OSTI)

A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

2005-11-01T23:59:59.000Z

438

Spectroscopic ellipsometry characterization of thin-film silicon nitride  

SciTech Connect (OSTI)

We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

Jellison, G.E. Jr.; Modine, F.A. [Oak Ridge National Lab., TN (United States); Doshi, P.; Rohatgi, A. [Georiga Inst. of Technology, Atlanta, GA (United States)

1997-05-01T23:59:59.000Z

439

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents [OSTI]

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20T23:59:59.000Z

440

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents [OSTI]

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

NREL: Solar Research - News Release Archives  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1 1 December 20, 2011 NREL Licenses Technology to Increase Solar Cell Efficiency The U.S. Department of Energy's National Renewable Energy Laboratory (NREL) announced today that Natcore Technology Inc. has been granted a patent license agreement to develop a line of black silicon products. December 15, 2011 NREL Scientists Report First Solar Cell Producing More Electrons In Photocurrent Than Solar Photons Entering Cell Researchers from the U.S. Department of Energy's National Renewable Energy Laboratory (NREL) have reported the first solar cell that produces a photocurrent that has an external quantum efficiency greater than 100 percent when photoexcited with photons from the high energy region of the solar spectrum. December 14, 2011 Tiny Solar Cell Could Make a Big Difference

442

Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell  

E-Print Network [OSTI]

We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

Li, Tong; Jiang, Chun

2010-01-01T23:59:59.000Z

443

Computational Modeling of Plasmon-Enhanced Light Absorption in a Multicomponent Dye Sensitized Solar Cell  

E-Print Network [OSTI]

commercially available solar cell panels are made of monocrystalline silicon doped with toxic heavy metals Solar Cell Hanning Chen, Martin G. Blaber, Stacey D. Standridge, Erica J. DeMarco, Joseph T. Hupp, Mark A. Ratner, and George C. Schatz* Argonne-Northwestern Solar Energy Research Center Department

444

Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array  

E-Print Network [OSTI]

Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array an approach for enhancing the absorption of thin-film amorphous silicon solar cells using periodic on the temporal coupled mode theory. Keywords: Resonant Dielectric Structures, Solar cells, Nanospheres

Grandidier, Jonathan

445

Bulk Heterojunction Organic Solar Cells utilizing a Benzothiadiazole-based Oligomer  

E-Print Network [OSTI]

Advantages over silicon solar cells · Roll-to-roll manufacturing lowers costs through a faster rate cells, which have issues of their own, will remain the dominant solar energy provider and the world to find a viable option to alleviate global energy concerns. One proposed solution, the organic solar cell

Collins, Gary S.

446

Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*  

E-Print Network [OSTI]

1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

447

CNT-SI HETEROJUNCTION SOLAR CELLS WITH STRUCTURE-CONTROLLED SINGLE-WALL CARBON NANOTUBE FILMS  

E-Print Network [OSTI]

CNT-SI HETEROJUNCTION SOLAR CELLS WITH STRUCTURE- CONTROLLED SINGLE-WALL CARBON NANOTUBE FILMS. The heterojunction solar cell was fabricated by dry depositing the SWNT film to the 3 mm by 3 mm n-type silicon solar cells. We proposed a water-vapor treatment to build up SWNTs to a self-assembled micro- honeycomb

Maruyama, Shigeo

448

Air-Stable High-Efficiency Solar Cells Using Improved Single-Walled Carbon Nanotube Films  

E-Print Network [OSTI]

1 Air-Stable High-Efficiency Solar Cells Using Improved Single-Walled Carbon Nanotube Films Kehang-3-5800-6983. #12;2 ABSTRACT We present the single-walled carbon nanotube/silicon (SWNT/Si) solar cells approaching, the PCEs of the fabricated solar cells slightly increased after six-month exposure in air without any

Maruyama, Shigeo

449

Plasmonic enhancement of thin-film solar cells using gold-black C.J. Fredricksena  

E-Print Network [OSTI]

Plasmonic enhancement of thin-film solar cells using gold-black coatings C.J. Fredricksena , D. R thin-film amorphous-silicon solar cells enhance the short-circuit current by 20% over a broad spectrum and locally enhance the field strength. Keywords: plasmonics, thin-film, solar cell, metallic nanoparticles

Peale, Robert E.

450

Breakthrough Cutting Technology Promises to Reduce Solar Costs | Department  

Broader source: Energy.gov (indexed) [DOE]

Breakthrough Cutting Technology Promises to Reduce Solar Costs Breakthrough Cutting Technology Promises to Reduce Solar Costs Breakthrough Cutting Technology Promises to Reduce Solar Costs March 1, 2010 - 4:34am Addthis Using SiGen's new cutting process, less material is wasted in creating solar products like this, a breakthrough that is expected to help make solar power more affordable. | Photo courtesy SiGen Using SiGen's new cutting process, less material is wasted in creating solar products like this, a breakthrough that is expected to help make solar power more affordable. | Photo courtesy SiGen Joshua DeLung Silicon Genesis is a San Jose, Calif., company that is advancing the field of solar energy by developing a process that will virtually eliminate all waste when cutting materials needed to implement solar technology.

451

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

452

Method of restoring degraded solar cells  

DOE Patents [OSTI]

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200 C for at least 30 minutes restores their efficiency. 2 figs.

Staebler, D.L.

1983-02-01T23:59:59.000Z

453

Method of restoring degraded solar cells  

DOE Patents [OSTI]

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

Staebler, David L. (Lawrenceville, NJ)

1983-01-01T23:59:59.000Z

454

Award-Winning Etching Process Cuts Solar Cell Costs (Fact Sheet)  

SciTech Connect (OSTI)

NREL scientists have invented the 'black silicon' nanocatalytic wet-chemical etch, an inexpensive, one-step process that literally turns the solar cells black, allowing them to absorb more than 98% of incident sunlight. The process costs just a few cents per watt of solar-cell power-producing capacity. Increases in manufactured cell efficiencies of up to 0.8% are possible because of the reduced reflectance of black silicon. This would reduce silicon solar module costs by $5-$10 per module.

Not Available

2013-08-01T23:59:59.000Z

455

Thermally Oxidized Silicon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Illustration of the silicon positions near the Si-SiO2 interface for a 4° miscut projected onto the ( ) plane. The silicon atoms in the substrate are blue and those in the oxide are red. The small black spots represent the translated silicon positions in the absence of static disorder. The silicon atoms in the oxide have been randomly assigned a magnitude and direction based on the static disorder value at that position in the lattice. The outline of four silicon unit cells is shown in black, whereas the outline of four expanded lattice cells in the oxide is shown in blue One of the most studied devices of modern technology is the field-effect transistor, which is the basis for most integrated circuits. At its heart

456

Solar Energy  

Science Journals Connector (OSTI)

There are major advantages to using solar energy for a variety of energy needs including electrical generation and space heating. The availability of solar radiation is extremely high in some localities of the...

Charles E. Brown Ph.D.

2002-01-01T23:59:59.000Z

457

Solar Easements  

Broader source: Energy.gov [DOE]

Idaho’s solar easement provisions allow for the access rights to sunlight for a solar energy device. The easement is transferred with the property title. Only a few Idaho communities have passed...

458

Solar Easements  

Broader source: Energy.gov [DOE]

Alaska's solar easement provisions are similar to those in many other states. They do not create an automatic right to sunlight. Rather, they allow parties to voluntarily enter into solar...

459

Solar Easements  

Broader source: Energy.gov [DOE]

Rhode Island allows property owners to establish solar easements in the same manner and with the same effect as a conveyance of an interest in real property. Solar easements must be created in...

460

Solar Easements  

Broader source: Energy.gov [DOE]

Ohio's solar-easement provisions are similar to those in effect in other states. Ohio law allows property owners to create binding solar easements for the purpose of protecting and maintaining...

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Solar Easements  

Broader source: Energy.gov [DOE]

In determining that the use of solar energy "can help reduce the nation's reliance upon imported fuels," Georgia encourages the development of solar-energy systems. Accordingly, under Georgia's...

462

Solar energy  

Science Journals Connector (OSTI)

... good book and certainly can be recommended as an introductory text for a course on solar ...solarenergy ...

D.O. Hall

1980-02-28T23:59:59.000Z

463

Graphene-Silicon Schottky Diodes  

Science Journals Connector (OSTI)

Graphene-Silicon Schottky Diodes ... We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. ... The I–V characteristics measured at 100, 300, and 400 K indicate that temperature strongly influences the ideality factor of graphene–silicon Schottky diodes. ...

Chun-Chung Chen; Mehmet Aykol; Chia-Chi Chang; A. F. J. Levi; Stephen B. Cronin

2011-04-25T23:59:59.000Z

464

Method of forming contacts for a back-contact solar cell  

DOE Patents [OSTI]

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Manning, Jane

2014-07-15T23:59:59.000Z

465

Wanxiang Silicon Peak Electronics Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Wanxiang Silicon Peak Electronics Co Ltd Wanxiang Silicon Peak Electronics Co Ltd Jump to: navigation, search Name Wanxiang Silicon-Peak Electronics Co Ltd Place Kaihua, Zhejiang Province, China Zip 324300 Sector Solar Product Maker of monocrystalline silicon ingots and wafers and subsidiary of the Wanxiang Group which includes solar cell and module maker Wanxiang Solar. Coordinates 29.140209°, 118.405113° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":29.140209,"lon":118.405113,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

466

Auxin Solar | Open Energy Information  

Open Energy Info (EERE)

Auxin Solar Auxin Solar Jump to: navigation, search Name Auxin Solar Place Campbell, California Product Silicon Valley-based Auxin manufactures crystalline PV modules ranging from 10W to 290W. The company has signed a tentative 4MW supply deal with Wild Brush Energy. Coordinates 33.14919°, -95.951444° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.14919,"lon":-95.951444,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

467

Gadir Solar | Open Energy Information  

Open Energy Info (EERE)

Gadir Solar Gadir Solar Jump to: navigation, search Name Gadir Solar Place Madrid, Spain Zip 28001 Product Madrid-based manufacturer of thin-film silicon PV modules. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

468

Development of concentrator solar cells  

SciTech Connect (OSTI)

A limited pilot production run on PESC silicon solar cells for use at high concentrations (200 to 400 suns) is summarized. The front contact design of the cells was modified for operation without prismatic covers. The original objective of the contract was to systematically complete a process consolidation phase, in which all the, process improvements developed during the contract would be combined in a pilot production run. This pilot run was going to provide, a basis for estimating cell costs when produced at high throughput. Because of DOE funding limitations, the Photovoltaic Concentrator Initiative is on hold, and Applied Solar`s contract was operated at a low level of effort for most of 1993. The results obtained from the reduced scope pilot run showed the effects of discontinuous process optimization and characterization. However, the run provided valuable insight into the technical areas that can be optimized to achieve the original goals of the contract.

Not Available

1994-08-01T23:59:59.000Z

469

Silicon nanopatterning for device applications  

E-Print Network [OSTI]

dimensional array of photovoltaic solar cells using non-such as photonic, photovoltaic, solar cells, capacitors,dimensional array of photovoltaic solar cells using non-

Oh, Young

2012-01-01T23:59:59.000Z

470

Solar Energy LLC Industrial Investors Group | Open Energy Information  

Open Energy Info (EERE)

LLC Industrial Investors Group LLC Industrial Investors Group Jump to: navigation, search Name Solar Energy LLC - Industrial Investors Group Place Moscow, Russian Federation Zip 119017 Sector Solar Product The company Solar Energy plans to use turnkey equipment from GT Solar and others to make silicon, ingots, wafers and cells in Russia. References Solar Energy LLC - Industrial Investors Group[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Energy LLC - Industrial Investors Group is a company located in Moscow, Russian Federation . References ↑ "Solar Energy LLC - Industrial Investors Group" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Energy_LLC_Industrial_Investors_Group&oldid=351271

471

Solar Power  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solar Power Solar Power Project Opportunities Abound in the Region The WIPP site is receives abundant solar energy with 6-7 kWh/sq meter power production potential As the accompanying map of New Mexico shows, the WIPP site enjoys abundant year-round sunshine. With an average solar power production potential of 6-7 kWh/sq meter per day, one exciting project being studied for location at WIPP is a 30-50 MW Solar Power Tower: The American Solar Energy Society (ASES) is is a national trade association promoting solar energy as a clean source of electricity, and provides a comprehensive resource for additional information. DOE's Office of Energy Efficiency and Renewable Energy is also a comprehensive resource for more information on renewable energy.

472

VP 100: Growth in solar means growth in Ohio | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Growth in solar means growth in Ohio Growth in solar means growth in Ohio VP 100: Growth in solar means growth in Ohio October 6, 2010 - 10:57am Addthis DuPont is betting on major growth in the market for solar energy -- and therefore for its Tedlar film, a durable backing for silicon solar panels. | Photo Courtesy of DuPont DuPont is betting on major growth in the market for solar energy -- and therefore for its Tedlar film, a durable backing for silicon solar panels. | Photo Courtesy of DuPont Lorelei Laird Writer, Energy Empowers Market research company Solarbuzz reports that global demand for solar power soared by 54 percent in the second quarter of 2010. The research firm reports that in the United States, the annual number of total watts installed moved from 485 MW in all of 2009 to 2.3 GW as of June -- and

473

Prime Solar Pty Ltd | Open Energy Information  

Open Energy Info (EERE)

Prime Solar Pty Ltd Prime Solar Pty Ltd Jump to: navigation, search Name Prime Solar Pty Ltd Place Perth, Western Australia, Australia Zip 6151 Sector Solar Product Prime Solar Australia plans to manufacture polycrystalline silicon and wafers. Coordinates -31.95302°, 115.857239° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":-31.95302,"lon":115.857239,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

474

NREL: Learning - Solar Photovoltaic Technology Basics  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solar Photovoltaic Technology Basics Solar Photovoltaic Technology Basics Content on this page requires a newer version of Adobe Flash Player. Get Adobe Flash player This video provides an overview of NREL's research in solar photovoltaic technology. Text Version Solar cells, also called photovoltaic (PV) cells by scientists, convert sunlight directly into electricity. PV gets its name from the process of converting light (photons) to electricity (voltage), which is called the PV effect. The PV effect was discovered in 1954, when scientists at Bell Telephone discovered that silicon (an element found in sand) created an electric charge when exposed to sunlight. Soon solar cells were being used to power space satellites and smaller items like calculators and watches. Today, thousands of people power their homes and businesses with individual

475

CSG Solar AG | Open Energy Information  

Open Energy Info (EERE)

CSG Solar AG CSG Solar AG Jump to: navigation, search Name CSG Solar AG Place Thalheim, Saxony-Anhalt, Germany Zip 6766 Sector Solar Product Manufacture of solar modules based on Crystalline Silicon on Glass (CSG) technology Coordinates 50.70348°, 12.8498° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":50.70348,"lon":12.8498,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

476

ICP Solar Technologies Inc | Open Energy Information  

Open Energy Info (EERE)

ICP Solar Technologies Inc ICP Solar Technologies Inc Jump to: navigation, search Name ICP Solar Technologies Inc Place Montreal, Quebec, Canada Zip H3N 1W5 Sector Solar Product Manufactures amorphous silicon solar PV cells, and battery chargers using these cells. Coordinates 45.512293°, -73.554407° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":45.512293,"lon":-73.554407,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

477

Abengoa Solar, Inc. (Mojave Solar) | Department of Energy  

Energy Savers [EERE]

Solar, Inc. (Mojave Solar) Abengoa Solar, Inc. (Mojave Solar) Abengoa Solar, Inc. (Mojave Solar) Location: San Bernardino County, CA Eligibility: 1705 Snapshot In September 2011,...

478

Plasmonic Back Structures Designed for Efficiency Enhancement of Thin Film Solar Cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to thin-film amorphous silicon (a-Si) solar cell are proposed to enhance the cell efficiency in a wide...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Song, Guofeng

479

Materials from 2014 SunShot Summit BREAKOUT SESSION: LOOKING FORWARD: THE SOLAR MARKET IN 2040  

Broader source: Energy.gov [DOE]

This breakout session at the 2014 SunShot Grand Challenge Summit and Peer Review envisioned what solar technologies would compose the marketplace in 25 years. Will silicon PV still dominate, or...

480

Ten-percent solar-to-fuel conversion with nonprecious materials  

Science Journals Connector (OSTI)

...solar-to-fuels conversion. Distributed and grid-scale adoption of nondispatchable, intermittent...Energy (2013) Hydrogen, fuel cells, & infrastructure technologies program. Hydrogen production. Available...2003 ) Design considerations for a hybrid amorphous silicon/photoelectrochemical...

Casandra R. Cox; Jungwoo Z. Lee; Daniel G. Nocera; Tonio Buonassisi

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Production of Si by vacuum carbothermal reduction of SiO2 using concentrated solar energy  

Science Journals Connector (OSTI)

Using concentrated solar radiation as the energy source of high-temperature process heat, the carbothermal reduction of silica to silicon was examined thermodynamically and demonstrated experimentally at vacuu...

Peter G. Loutzenhiser; Ozan Tuerk; Aldo Steinfeld

2010-09-01T23:59:59.000Z

482

Novel textured glass substrate with high light trapping capacity for thin film Si solar cells application  

Science Journals Connector (OSTI)

A novel large feature size crater like glass substrate was proposed in this paper. P-i-n type microcrystalline silicon film solar cell with higher external quantum efficiency was...

Wang, Yanfeng; Zhang, xiaodan; Bai, Lisha; Huang, Qian; Wei, Changchun; Zhao, Ying

483

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network [OSTI]

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

484

Structure and photoelectrochemical properties of silicon microstructures arrays  

Science Journals Connector (OSTI)

Abstract Two silicon microstructrues of silicon nanowires (SiNWs) and silicon microchannel plates (Si MCP) have been successfully fabricated combined by standard microelectronics technology and electrochemical method. The performances have been investigated for dye-sensitized solar cells (DSSCs) by applying silicon nanowires (SiNWs) and silicon microchannel plates (Si MCP) to the counter electrode, respectively. And the electrocatalytic activities of Si MCP and SiNWs electrodes for triiodide reduction were studied using electrochemical impedance spectroscopy. The two microstructure electrodes consisting of a large number of channels with high surface to volume ratio exhibits a highly interconnected network structure with good catalytic activity. A high photovolatic conversion efficiency of over 7.01% and 7.86% were recorded for \\{DSSCs\\} based on the Si MCP and SiNWs counter electrodes, which is comparatable to the cell based on conventional Pt counter electrode at the same condition. It could be expected that this low cost SiNWs and Si MCP and compatibility with microelectronic technology would make the silicon-based monolithic DSSC available in practical application.

Bairui Tao; Fengjuan Miao; Junhao Chu

2013-01-01T23:59:59.000Z

485

CALIFORNIA SOLAR DATA MANUAL  

E-Print Network [OSTI]

Estimating Unmeasured Solar Radiation Quantities . . . . . .Weather Data . . . . . , . , . . . . . . . . . .Solar DataB. l'he Solar Constant. . . . . . C. Solar Time and Standard

Berdahl, P.

2010-01-01T23:59:59.000Z

486

Sandia National Laboratories: Solar Tower  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solar Thermal Test Facility * NSTTF * Renewable Energy * SAND2012-8086W * solar * Solar Energy * solar power * Solar Research * Solar Tower Comments are closed. Renewable...

487

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer  

DOE Patents [OSTI]

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1980-01-01T23:59:59.000Z

488

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a  

E-Print Network [OSTI]

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

Alam, Muhammad A.

489

Influence of solar heating on the performance of integrated solar cell microstrip patch antennas  

SciTech Connect (OSTI)

The integration of microstrip patch antennas with photovoltaics has been proposed for applications in autonomous wireless communication systems located on building facades. Full integration was achieved using polycrystalline silicon solar cells as both antenna ground plane and direct current power generation in the same device. An overview of the proposed photovoltaic antenna designs is provided and the variation characterised of the electromagnetic properties of the device with temperature and solar radiation. Measurements for both copper and solar antennas are reported on three different commercial laminates with contrasting values for thermal coefficient of the dielectric constant. (author)

Roo-Ons, M.J.; Shynu, S.V.; Ammann, M.J. [Antenna and High Frequency Research Centre, School of Electronic and Communications Engineering, Dublin Institute of Technology (Ireland); Seredynski, M. [Institute of Heat Engineering, Warsaw University of Technology (Poland); McCormack, S.J. [Dept. of Civil, Structural and Environmental Engineering, Trinity College Dublin (Ireland); Norton, B. [Dublin Energy Lab., Focas Institute, Dublin Institute of Technology (Ireland)

2010-09-15T23:59:59.000Z

490

Solar Physics A Journal for Solar and Solar-  

E-Print Network [OSTI]

. With society's increased dependence on space-based technology, much of which is at risk due to solar activity1 23 Solar Physics A Journal for Solar and Solar- Stellar Research and the Study of Solar-010-9653- x Solar Polar Fields During Cycles 21??? 23: Correlation with Meridional Flows #12;1 23 Your article

Padmanabhan, Janardhan

491

Solar Decathlon  

Broader source: Energy.gov (indexed) [DOE]

U.S. Department of Energy U.S. Department of Energy Solar Decathlon Sara Farrar-Nagy National Renewable Energy Laboratory sara.farrar-nagy@nrel.gov, 303-384-7514 April 3, 2013 Solar Decathlon 2009 Solar Decathlon 2011 Solar Decathlon 2013 & XPO Washington, D.C. Washington, D.C. Irvine, California 2 | Building Technologies Office eere.energy.gov Purpose & Objectives Problem Statement: How to provide workforce training, improve building science instruction, foster innovation in whole-building design, and

492

Solar Energy.  

E-Print Network [OSTI]

??This thesis is about Photovoltaic (PV) cells and its stresses in various directions by calculating the power generated using solar cells under different conditions to… (more)

Bafana, Ramzi

2014-01-01T23:59:59.000Z

493

Solar Mapper  

Broader source: Energy.gov [DOE]

Interactive, online mapping tool providing access to spatial data related to siting utility-scale solar facilities in the southwestern United States.

494

Solar News  

Broader source: Energy.gov (indexed) [DOE]

news Office of Energy Efficiency & Renewable news Office of Energy Efficiency & Renewable Energy Forrestal Building 1000 Independence Avenue, SW Washington, DC 20585 en Energy Department Announces $19 Million to Drive Down Solar Soft Costs, Increase Hardware Efficiency http://energy.gov/eere/articles/energy-department-announces-19-million-drive-down-solar-soft-costs-increase-hardware solar-soft-costs-increase-hardware" class="title-link">Energy Department Announces $19 Million to Drive Down Solar Soft Costs, Increase Hardware Efficiency

495

Ultratough, Thermally Stable Polycrystalline Diamond/Silicon...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide Nanocomposites for Drill Bits Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide...

496

Optical properties of nanostructured silicon-rich silicon dioxide  

E-Print Network [OSTI]

We have conducted a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization ...

Stolfi, Michael Anthony

2006-01-01T23:59:59.000Z

497

Silicon Valley Power - Residential Energy Efficiency Rebate Program |  

Broader source: Energy.gov (indexed) [DOE]

Residential Energy Efficiency Rebate Program Residential Energy Efficiency Rebate Program Silicon Valley Power - Residential Energy Efficiency Rebate Program < Back Eligibility Residential Savings Category Home Weatherization Commercial Weatherization Heating & Cooling Cooling Appliances & Electronics Commercial Lighting Lighting Water Heating Commercial Heating & Cooling Program Info State California Program Type Utility Rebate Program Rebate Amount Attic Insulation: $175 Ceiling Fan: $35 each Heat Pump Water Heater: up to $1,000 LED Bulbs: $15/bulb installed Pool Pump: $200 Refrigerator: $50 Refrigerator recycling: $35 Room AC: $25 Room AC Recycling: $25 Solar Attic Fan: $100 Whole House Fan: $200 Provider Silicon Valley Power Silicon Valley Power offers rebates to residential customers for the purchase of a variety of energy efficient products including:

498

Sinocome Solar aka Perfect Field Investment | Open Energy Information  

Open Energy Info (EERE)

Solar aka Perfect Field Investment Solar aka Perfect Field Investment Jump to: navigation, search Name Sinocome Solar (aka Perfect Field Investment) Place China Product Chinese manufacturer of amorphous silicon thin-film cells and modules using technology patents owned by the Target Group, also a Chinese firm. References Sinocome Solar (aka Perfect Field Investment)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Sinocome Solar (aka Perfect Field Investment) is a company located in China . References ↑ "[ Sinocome Solar (aka Perfect Field Investment)]" Retrieved from "http://en.openei.org/w/index.php?title=Sinocome_Solar_aka_Perfect_Field_Investment&oldid=351122" Categories:

499

Akros Silicon | Open Energy Information  

Open Energy Info (EERE)

Akros Silicon Akros Silicon Jump to: navigation, search Name Akros Silicon Place Folsom, California Zip 95630 Product Akros Silicon specilizes in fabless semicondutors used for Power Over Ethernet, networks, and broadband. References Akros Silicon[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Akros Silicon is a company located in Folsom, California . References ↑ "Akros Silicon" Retrieved from "http://en.openei.org/w/index.php?title=Akros_Silicon&oldid=341960" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties 429 Throttled (bot load) Error 429 Throttled (bot load)

500

DOE Solar Decathlon: Solar Decathlon Videos  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Consumer Workshops Consumer Workshops Building Industry Workshops Technical Resources Sponsors Where Are the Houses Now? Quick Links Solar Decathlon Home Solar Decathlon 2011 Solar Decathlon 2009 Solar Decathlon 2007 Solar Decathlon 2005 Solar Decathlon 2002 Solar Decathlon 2011 Solar Decathlon Videos For video of the U.S. Department of Energy Solar Decathlon 2011, see the collections listed below or visit the U.S. Department of Energy Solar Decathlon YouTube Channel. General Solar Decathlon Videos Watch these videos to learn about the Solar Decathlon competition and event. Solar Decathlon House Video Tours Learn about each of the U.S. Department of Energy Solar Decathlon teams and their houses in these video tours. Solar Decathlon Team-Produced Videos Watch videos produced by the teams themselves for the Solar Decathlon