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Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Engineering Metal Impurities in Multicrystalline Silicon Solar...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

from inexpensive low-grade silicon. Artist's impression of an intense beam of synchrotron light striking a solar cell and the resulting fluorescence image of the distribution of...

2

Texturization of multicrystalline silicon solar cells  

E-Print Network [OSTI]

A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

Li, Dai-Yin

2010-01-01T23:59:59.000Z

3

Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells  

E-Print Network [OSTI]

In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating ...

Bertoni, Mariana I.

4

The effect of encapsulation on the reflectance of photovoltaic modules using textured multicrystalline-silicon solar cells  

SciTech Connect (OSTI)

Texturing multicrystalline-silicon cells is a promising technique for reducing reflectance losses. We investigated two methods for texturing multicrystalline-silicon solar cells - anisotropic chemical etch and mechanical dicing saw. Our work emphasized reducing reflectance in the encapsulated module by using optical confinement in the module. We found that optical confinement in the module is very important in the optimization of texture geometries.

Gee, J.M.; Schubert, W.K.; Tardy, H.L.; Hund, T.D. [Sandia National Labs., Albuquerque, NM (United States); Robison, G. [Semiconductor Assembly Network, Prescott Valley, AZ (United States)

1995-01-01T23:59:59.000Z

5

Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation and rapid thermal annealing  

E-Print Network [OSTI]

of terrestrial solar cells as compared to classical furnace or pulsed laser annealing. Unfortunately, drawbacks695 Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation with classical furnace annealing or with classical diffusion process. Revue Phys. Appl. 22 (1987) 695-700 JUILLET

Paris-Sud XI, Université de

6

The 22nd International Photovoltaic Science and Engineering Conference, November 05-09, 2012, Hangzhou, China Gettering of n-type multicrystalline silicon solar cells by  

E-Print Network [OSTI]

, Hangzhou, China Gettering of n-type multicrystalline silicon solar cells by phosphorus diffusion, boron in heavily dislocated regions. 1. INTRODUCTION N-type multicrystalline silicon has great potential as solar+ diffused region in n- type silicon solar cells with either aluminum annealing or boron diffusion are good

7

Materials Science and Engineering B 134 (2006) 282286 Control of metal impurities in "dirty" multicrystalline silicon for solar cells  

E-Print Network [OSTI]

" multicrystalline silicon for solar cells A.A. Istratova,b,, T. Buonassisia,b,1, M.D. Picketta,b, M. Heuera,b, E processing of solar cells with satisfactory energy conversion efficiency based on inexpensive feedstock.V. All rights reserved. Keywords: Photovoltaics; Solar cells; Solar-grade silicon; Defect engineering

2006-01-01T23:59:59.000Z

8

E-Print Network 3.0 - area multicrystalline silicon Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SILICON SOLAR CELLS K. Bothe1,a) , D... ABSTRACT: We report on studies of the emission of light from industrial multicrystalline silicon solar... a broad wavelength distribution...

9

Analysis of copper-rich precipitates in silicon: chemical state,gettering, and impact on multicrystalline silicon solar cellmaterial  

SciTech Connect (OSTI)

In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifying the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon-oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy (mu-XRF),and a segregation coefficient is determined from experimental data to beat least (1-2)'103. Additionally, mu-XAS data directly demonstrates that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

Buonassisi, Tonio; Marcus, Matthew A.; Istratov, Andrei A.; Heuer, Matthias; Ciszek, Theodore F.; Lai, Barry; Cai, Zhonghou; Weber,Eicke R.

2004-11-08T23:59:59.000Z

10

Dislocation density reduction in multicrystalline silicon through cyclic annealing  

E-Print Network [OSTI]

Multicrystalline silicon solar cells are an important renewable energy technology that have the potential to provide the world with much of its energy. While they are relatively inexpensive, their efficiency is limited by ...

Vogl, Michelle (Michelle Lynn)

2011-01-01T23:59:59.000Z

11

Temperature-Dependent Photoluminescence Imaging and Characterization of a Multi-Crystalline Silicon Solar Cell Defect Area: Preprint  

SciTech Connect (OSTI)

Photoluminescence (PL) imaging is used to detect areas in multi-crystalline silicon that appear dark in band-to-band imaging due to high recombination. Steady-state PL intensity can be correlated to effective minority-carrier lifetime, and its temperature dependence can provide additional lifetime-limiting defect information. An area of high defect density has been laser cut from a multi-crystalline silicon solar cell. Both band-to-band and defect-band PL imaging have been collected as a function of temperature from ~85 to 350 K. Band-to-band luminescence is collected by an InGaAs camera using a 1200-nm short-pass filter, while defect band luminescence is collected using a 1350-nm long pass filter. The defect band luminescence is characterized by cathodo-luminescence. Small pieces from adjacent areas within the same wafer are measured by deep-level transient spectroscopy (DLTS). DLTS detects a minority-carrier electron trap level with an activation energy of 0.45 eV on the sample that contained defects as seen by imaging.

Johnston, S.; Yan, F.; Li, J.; Romero, M. J.; Al-Jassim, M.; Zaunbrecher, K.; Sidelkheir, O.; Blosse, A.

2011-07-01T23:59:59.000Z

12

Low cost manufacturing of light trapping features on multi-crystalline silicon solar cells : jet etching method and cost analysis  

E-Print Network [OSTI]

An experimental study was conducted in order to determine low cost methods to improve the light trapping ability of multi-crystalline solar cells. We focused our work on improving current wet etching methods to achieve the ...

Berrada Sounni, Amine

2010-01-01T23:59:59.000Z

13

New Metallization Technique Suitable for 6-MW Pilot Production of Efficient Multicrystalline Solar Cells Using Upgraded Metallurgical Silicon: Final Technical Progress Report, December 17, 2007-- June 16, 2009  

Broader source: Energy.gov [DOE]

This report describes CaliSolar's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. During this time, CaliSolar evolved from a handful of employees to over 100 scientists, engineers, technicians, and operators. On the technical side, the company transitioned from a proof-of-concept through pilot-scale to large-scale industrial production. A fully automated 60-megawatt manufacturing line was commissioned in Sunnyvale, California. The facility converts upgraded metallurgical-grade silicon feedstock to ingots, wafers, and high-efficiency multicrystalline solar cells.

14

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon  

E-Print Network [OSTI]

This manuscript concerns the application of infrared birefringence imaging (IBI) to quantify macroscopic and microscopic internal stresses in multicrystalline silicon (mc-Si) solar cell materials. We review progress to ...

Ganapati, Vidya

15

Synchrotron-based investigations of the nature and impact of ironcontamination in multicrystalline silicon solar cell materials  

SciTech Connect (OSTI)

Synchrotron-based microprobe techniques were used to obtain precise and systematic information about the size distribution, spatial distribution, shape, electrical activity, and chemical states of iron-rich impurity clusters in multicrystalline silicon materials used for cost-effective solar cells. These experimentally observed properties of iron-rich clusters allow one to derive conclusions about the origins of iron contamination, the mechanisms for incorporating large amounts of Fe into mc-Si, quantitative information about the distribution of Fe in mc-Si and the impacts of such contamination on solar cell performance. Two distinct groups of iron-rich clusters have been identified in both materials: (a) the occasional large (diameter greater than or equal to 1 mu-m) particles, either oxidized and/or present with multiple other metal species reminiscent of stainless steels or ceramics, which are believed to originate from a foreign source such as the growth surfaces, production equipment, or feedstock, and (b) the more numerous, homogeneously distributed, and smaller iron silicide precipitates (dia. less than or equal to 800 nm, often < 100 nm), originating from a variety of possible formation mechanisms involving atomically dissolved iron in the melt or in the crystal. It was found that iron silicide nanoprecipitates account for bulk Fe concentrations as high as 1014-15cm-3 and can have a large negative impact on device performance because of their homogeneous distribution along structural defects. The large (dia. greater than or equal to 1 mu-m) particles, while containing elevated amounts of metals, are low in spatial density and thus deemed to have a low direct impact on device performance, although they may have a large indirect impact via the dissolution of Fe, thus assisting the formation of iron silicide nanoprecipitates. These results demonstrate that it is not necessarily the total Fe content that limits mc-Si device performance, but the distribution of Fe within the material.

Buonassisi, Tonio; Istratov, Andrei A.; Heuer, Matthias; Marcus,Matthew A.; Jonczyk, Ralf; Lai, Barry; Cai, Zhonghou; Heald, Steven; Warta, Wilhelm; Isenberg, Joerg; Schindler, Roland; Weber, Eicke R.

2004-11-08T23:59:59.000Z

16

High-Efficiency 6?? Multicrystalline Black Solar Cells Based on Metal-Nanoparticle-Assisted Chemical Etching  

E-Print Network [OSTI]

Multicrystalline silicon (mc-Si) photovoltaic (PV) solar cells with nanoscale surface texturing by metal-nanoparticle-assisted etching are proposed to achieve high power efficiency. The investigation of average nanorod ...

Hsu, W. Chuck

2012-01-01T23:59:59.000Z

17

Assembly and characterization of colloid-based antireflective coatings on multicrystalline silicon solar cells  

E-Print Network [OSTI]

energy is being held back by the high prices of the photovoltaic panels. AR materials deposited by self solar cells Brian G. Prevo,{ Emily W. Hon and Orlin D. Velev* Received 4th September 2006, Accepted 10th solar cells. The nanocoatings reduced the reflectance of the solar cells by approximately 10% across

Velev, Orlin D.

18

Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. We found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several ?m were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.

Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

2012-06-01T23:59:59.000Z

19

Impact of surface roughness on the electrical parameters of industrial high efficiency NaOH-NaOCl textured multicrystalline silicon solar cell  

SciTech Connect (OSTI)

Sodium hydroxide (NaOH) and sodium hypochlorite (NaOCl) solution (1:1 ratio by volume) based texturization process at 80-82 C is an easy, low cost and comparatively new and convenient option for fabrication of any multicrystalline silicon (mC-Si) solar cell. In the present study atomic force microscope is used to observe the intragrain surface in a miniscule area (3 {mu}m x 3 {mu}m) of NaOH-NaOCl textured surface by two and three dimensional analysis, roughness analysis and section analysis. The r.m.s value of the surface parameter of 7.0 nm ascertains the smoothness of the textured surface and further the surface reflectivity is minimized to 4-6% in the 500-1000 nm wavelength range by a proper silicon nitride anti-reflection coating. Comparing with the standard HF-HNO{sub 3}-CH{sub 3}COOH acid textured cell, the NaOH-NaOCl textured cell shows a comparatively lower value of series resistance of 7.17 m{omega}, higher value of shunt resistance of 18.4 {omega} to yield a fill factor of 0.766 leading to more than 15% cell efficiency in the industrial cell processing line. This AFM study yields different surface roughness parameters for the NaOH-NaOCl textured wafers which can be used as a reference standard for optimized texturing. (author)

Basu, P.K. [Department of Physics, Echelon Institute of Technology, Faridabad 121002, Haryana (India); Pujahari, R.M. [Department of Physics, Echelon Institute of Technology, Faridabad 121002, Haryana (India); Department of Physics, Manav Rachna International University, Faridabad 121001, Haryana (India); Kaur, Harpreet [Department of Physics, Manav Rachna International University, Faridabad 121001, Haryana (India); Department of Physics, Advanced Institute of Technology and Management, Palwal 121105, Haryana (India); Singh, Devi [Department of Physics, Manav Rachna International University, Faridabad 121001, Haryana (India); Varandani, D.; Mehta, B.R. [Department of Physics, Indian Institute of Technology, New Delhi 110016 (India)

2010-09-15T23:59:59.000Z

20

Method for processing silicon solar cells  

DOE Patents [OSTI]

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

1997-05-06T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Imaging Study of Multi-Crystalline Silicon Wafers Throughout the Manufacturing Process: Preprint  

SciTech Connect (OSTI)

Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging is used to characterize defects and material quality on bricks and wafers. Defect regions within the wafers are influenced by brick position within an ingot and height within the brick. The defect areas in as-cut wafers are compared to imaging results from reverse-bias electroluminescence and dark lock-in thermography and cell parameters of near-neighbor finished cells. Defect areas are also characterized by defect band emissions. The defect areas measured by these techniques on as-cut wafers are shown to correlate to finished cell performance.

Johnston, S.; Yan, F.; Zaunbracher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

2011-07-01T23:59:59.000Z

22

Application of infrared birefringence imaging for measuring residual stress in multicrystalline, quasi-mono, dendritic web, and string ribbon silicon for solar cells  

E-Print Network [OSTI]

One of the parameters with highest impact on photovoltaic module cost is manufacturing yield during solar cell production. Yield is, to a great extent, directly affected by the crystallization technique used to grow the ...

Castellanos Rodríguez, Sergio

2014-01-01T23:59:59.000Z

23

European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2CV.2.36 DETERMINING THE BULK LIFETIME OF UNPASSIVATED MULTICRYSTALLINE SILICON WAFERS  

E-Print Network [OSTI]

. Brendel1 , R. Falster2 and R. Sinton3 1 Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1 Sinton Instruments, 4720 Walnut Street, Suite 102, Boulder, CO 80301, USA ABSTRACT: The determination potential and benefit of carrier lifetime measure- ments on unprocessed bare wafers, Sinton et al. [3] pre

24

Self Aligned Cell: Scaling Up Manufacture of a Cost Effective Cell Architecture for Multicrystalline Silicon Photovoltaics  

SciTech Connect (OSTI)

Two areas of technology for fabrication of higher efficiency Si-wafer solar cells were addressed: (1) the formation of structured texturing that is an improvement over the industry-standard isotexture process for multicrystalline wafers. (2) the formation of fine line (<50 micron) metallization seed layers in a self-aligned manner where the fingers can be automatically and perfectly lined up to a selective emitter and where expensive silver screen printing paste can be mostly replaced by plating up the seed layers with silver or copper. The benefits are: a) Lower reflectivity , b) Decoupling the performance of the texture from the saw damage, thus allowing for better advances in sawing and a more robust wet process. 1366 Technologies developed 2 pilot machines for 1) deposition and patterning of low-cost resist layers to enable simultaneous Honeycomb front texturing and groove formation for multicrystalline Si wafers, and 2) fine-line dispensing of materials that are self aligned to the grooves.

Gabor, A.; van Mierlo, F.

2010-12-01T23:59:59.000Z

25

Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based  

E-Print Network [OSTI]

Quantifying the effect of metal-rich precipitates on minority carrier diffusion length diffusion length of individual transition metal species in multicrystalline silicon. SR-XBIC, -XRF, and -XAS correlation between local concentrations of copper and nickel silicide precipitates and a decrease of minority

26

Comparison of Photoluminescence Imaging on Starting Multi-Crystalline Silicon Wafers to Finished Cell Performance: Preprint  

SciTech Connect (OSTI)

Photoluminescence (PL) imaging techniques can be applied to multicrystalline silicon wafers throughout the manufacturing process. Both band-to-band PL and defect-band emissions, which are longer-wavelength emissions from sub-bandgap transitions, are used to characterize wafer quality and defect content on starting multicrystalline silicon wafers and neighboring wafers processed at each step through completion of finished cells. Both PL imaging techniques spatially highlight defect regions that represent dislocations and defect clusters. The relative intensities of these imaged defect regions change with processing. Band-to-band PL on wafers in the later steps of processing shows good correlation to cell quality and performance. The defect band images show regions that change relative intensity through processing, and better correlation to cell efficiency and reverse-bias breakdown is more evident at the starting wafer stage as opposed to later process steps. We show that thermal processing in the 200 degrees - 400 degrees C range causes impurities to diffuse to different defect regions, changing their relative defect band emissions.

Johnston, S.; Yan, F.; Dorn, D.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Ounadjela, K.

2012-06-01T23:59:59.000Z

27

Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat  

SciTech Connect (OSTI)

As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

2011-07-01T23:59:59.000Z

28

Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint  

SciTech Connect (OSTI)

Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

Yan, F.; Johnston, S.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

2011-07-01T23:59:59.000Z

29

Sacrificial high-temperature phosphorus diffusion gettering for lifetime improvement of multicrystalline silicon wafers  

E-Print Network [OSTI]

Iron is among the most deleterious lifetime-limiting impurities in crystalline silicon solar cells. In as-grown material, iron is present in precipitates and in point defects. To achieve conversion efficiencies in excess ...

Scott, Stephanie Morgan

2014-01-01T23:59:59.000Z

30

Estimation of solidification interface shapes in a boronphosphorus compensated multicrystalline silicon ingot via photoluminescence imaging  

E-Print Network [OSTI]

0200, Australia b APOLLON SOLAR, 66 Cours Charlemagne, 69002 Lyon, France a r t i c l e i n f o Article solar cells from this kind of material lies in the ability of the silicon growth process to obtain presented to attach cameras on two sides of a transparent furnace, allowing interface shapes to be estimated

31

Synchrotron-based investigations into metallic impurity distribution and effect engineering in multicrystalline silicon via thermal treatments.  

SciTech Connect (OSTI)

Synchrotron-based microprobe investigations were conducted to study the effect of heat treatments and cooling rates on the distribution and chemical state of metal-rich precipitates in multicrystalline silicon. A brief summary of these results is presented herein; complete reports will be published elsewhere. The effect of temperature on the dissolution of metal-silicide precipitates during rapid thermal processing has been investigated, revealing that higher temperatures can lead to the dissolution of metal silicide precipitates correlated with decreases in cell performance. The effect of modifying cooling rates on the distributions of metals has also been investigated, indicating that while fast cools lead to widespread nucleation, slow cools can lead to the formation of significantly larger clusters and decreased intragranular recombination activity.

Buonassisi, T.; Istratov, A. A.; Marcus, M. A.; Peters, S.; Ballif, C.; Heuer, M.; Ciszek, T. F.; Cai, Z.; Lai, B.; Schindler, R.; Weber, E. R.; LBNL; Univ. of California at Berkeley; Advanced Light Source; Fraunhofer Inst. of Solar Energy Systems; Univ. of Leipzig; NREL

2005-01-01T23:59:59.000Z

32

Journal of Crystal Growth 287 (2006) 402407 Transition metals in photovoltaic-grade ingot-cast multicrystalline  

E-Print Network [OSTI]

Journal of Crystal Growth 287 (2006) 402­407 Transition metals in photovoltaic-grade ingot silicon (mc-Si) ingot casting for cost-effective solar cell wafer production. Highly sensitive to the invited talk ``Transition metals in photovoltaic-grade multicrystalline silicon'' by A.A. Istratov, T

33

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing Zirconia NanoparticlesSmart GrocerDepartment& Engineering

34

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing Zirconia NanoparticlesSmart GrocerDepartment& EngineeringEngineering Metal

35

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing Zirconia NanoparticlesSmart GrocerDepartment& EngineeringEngineering

36

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing Zirconia NanoparticlesSmart GrocerDepartment&

37

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing Zirconia NanoparticlesSmart GrocerDepartment&Engineering Metal Impurities in

38

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series toESnet4: Networking for37Energy StorageEngine ResearchEngineering Metal

39

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series toESnet4: Networking for37Energy StorageEngine ResearchEngineering

40

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

SciTech Connect (OSTI)

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Statistically meaningful data on the chemical state of ironprecipitates in processed multicrystalline silicon usingsynchrotron-based X-ray absorption spectroscopy  

SciTech Connect (OSTI)

X-ray fluorescence microscopy (mu-XRF), x-ray beam induced current (XBIC), and x-ray absorption spectromicroscopy (mu-XAS) were performed on fully-processed Bay Six cast multicrystalline silicon and aluminum-gettered AstroPower Silicon-Film(TM) sheet material. Over ten iron precipitates--predominantly of iron silicide--were identified at low lifetime regions in both materials, both at grain boundaries and intragranular defects identified by XBIC. In addition, large (micron-sized) particles containing oxidized iron and other impurities (Ca, Cr, Mn) were found in BaySix material. The smaller iron silicide precipitates were more numerous and spatially distributed than their larger oxidized iron counterparts, and thus deemed more detrimental to minority carrier diffusion length.

Buonassisi, T.; Heuer, M.; Istratov, A.A.; Weber, E.R.; Cai, Z.; Lai, B.; Marcus, M.; Lu, J.; Rozgonyi, G.; Schindler, R.; Jonczyk, R.; Rand, J.

2004-11-08T23:59:59.000Z

42

Compensated amorphous silicon solar cell  

DOE Patents [OSTI]

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)

1983-01-01T23:59:59.000Z

43

Method for processing silicon solar cells  

DOE Patents [OSTI]

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

1997-01-01T23:59:59.000Z

44

Laser wafering for silicon solar.  

SciTech Connect (OSTI)

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

45

Amorphous silicon/crystalline silicon heterojunctions: The future of high-efficiency silicon solar cells  

E-Print Network [OSTI]

;5 Record efficiencies #12;6 Diffused-junction solar cells Diffused-junction solar cell Chemical passivation to ~650 mV #12;7 Silicon heterojunction solar cells a-Si:H provides excellent passivation of c-Si surface Heterojunction solar cell Chemical passivation Chemical passivation #12;8 Voc and silicon heterojunction solar

Firestone, Jeremy

46

Present status and future prospects of electro-magnetic casting for silicon solar cells  

SciTech Connect (OSTI)

The development research of Electro-Magnetic Casting (EMC) for silicon crystal manufacturing technology has been carried out for years with the purpose of providing low cost multicrystalline silicon substrate for solar cells. The EMC technology is a new concept, in which electromagnetic force is utilized to suspend molten metal without contact to crucible wall for melting and solidification of silicon material. At present, the research has been carried out for the development of casting technique with an ingot size of 22 x 22 cm{sup 2} cross section, and the furnace construction for producing a 35 x 35 cm{sup 2} cross sectioned ingot has been begun. Solar cell conversion efficiencies using EMC ingot crystals are ranging from 13--14% at the present, and the quality of EMC material reaches within that of conventional mold casting material. By the improvements of higher casting speed, higher material quality and larger ingot size at the EMC technology, it is expected that a new casting technique for lower cost ingot production will be realized. The paper describes the features of EMC technology, the silicon EMC furnace, crystalline properties of EMC ingots, electric power consumption of EMC, and cost comparison of the EMC and Czychralski pulling methods.

Kaneko, Kyojiro; Kawamura, Ritsuo; Misawa, Teruoki [Sumitomo SiTiX Corp., Amagasaki, Hyogo (Japan). Research and Development Center

1994-12-31T23:59:59.000Z

47

Advanced crystallization techniques of ''solar grade'' silicon  

SciTech Connect (OSTI)

Microstructural, electrical and photovoltaic characteristics of polycristalline silicon solar cells fabricated with silicon ingots containing 5, 100 and 500 ppmw iron are reported and discussed. All silicon ingots were grown by the directional solidification technique in graphite or special quartz molds and doped intentionally with iron, in order to evaluate the potentiality of the D.S. technique when employed with solar silicon feedstocks. Results indicate that structural breakdown limits the amount of the ingot which is usable for solar cells fabrication, but also that efficiencies in excess of 10% are obtained using the ''good'' region of the ingot.

Gasparini, M.; Alessandri, M.; Calligarich, C.; Pizzini, S.; Rava, P.; Redaelli, F.; Sardi, L.

1982-09-01T23:59:59.000Z

48

Fabricating solar cells with silicon nanoparticles  

DOE Patents [OSTI]

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02T23:59:59.000Z

49

Arrays of ultrathin silicon solar microcells  

DOE Patents [OSTI]

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

2014-03-25T23:59:59.000Z

50

Manufacture of silicon carbide using solar energy  

DOE Patents [OSTI]

A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Glatzmaier, Gregory C. (Boulder, CO)

1992-01-01T23:59:59.000Z

51

Compensated amorphous-silicon solar cell  

DOE Patents [OSTI]

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

Devaud, G.

1982-06-21T23:59:59.000Z

52

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents [OSTI]

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

Kaschmitter, J.L.

1996-07-23T23:59:59.000Z

53

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents [OSTI]

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

Kaschmitter, James L. (Pleasanton, CA)

1996-01-01T23:59:59.000Z

54

Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells  

E-Print Network [OSTI]

Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells Xunming Deng and Eric A. Schiff Table of Contents 1 Overview 3 1.1 Amorphous Silicon: The First Bipolar Amorphous Semiconductor 3 1.2 Designs for Amorphous Silicon Solar Cells: A Guided Tour 6

Deng, Xunming

55

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

56

California: TetraCell Silicon Solar Cell Improves Efficiency...  

Energy Savers [EERE]

California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award August 16, 2013 -...

57

Coating for Silicon Solar Cell by Using Silvaco Software  

E-Print Network [OSTI]

efficiency of SiO 2/Si3N 4silicon solar cell. The solar cell structure was modelled by using Silvaco software

A. Lennie; H. Abdullah; Z. M. Shila; M. A. Hannan

58

GCL Solar Energy Technology Holdings formerly GCL Silicon aka...  

Open Energy Info (EERE)

GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name: GCL Solar Energy Technology Holdings (formerly GCL...

59

Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material  

E-Print Network [OSTI]

thermodynamic considerations that unlike certain metal species, copper tends to form a silicide pathways. In all samples, copper silicide Cu3Si is the only phase of copper identified. It is noted from

60

Metal electrode for amorphous silicon solar cells  

DOE Patents [OSTI]

An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

Williams, Richard (Princeton, NJ)

1983-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Silicon point contact concentrator solar cells  

SciTech Connect (OSTI)

Experimental results are presented for thin high resistivity concentrator silicon solar cells which use a back-side point-contact geometry. Cells of 130 and 233 micron thickness were fabricated and characterized. The thin cells were found to have efficiencies greater than 22 percent for incident solar intensities of 3 to 30 W/sq cm. Efficiency peaked at 23 percent at 11 W/sq cm measured at 22-25 C. Strategies for obtaining higher efficiencies with this solar cell design are discussed. 8 references.

Sinton, R.A.; Kwark, Y.; Swirhun, S.; Swanson, R.M.

1985-08-01T23:59:59.000Z

62

Development efforts on silicon solar cells  

SciTech Connect (OSTI)

This report presents a summary of the major results from the silicon high-concentration solar cell program at Stanford University from the period 1983--1990. Following a detailed design study, efforts were focused upon experimental verification of the modeled results that predicted 28% efficiencies for a new 500X concentrator solar cell design. A history of the research progress is given detailing the critical experiments that enabled the demonstration of 19.6% cells in 1983, then subsequent improvements culminating in efficiencies over 28% by 1987. In addition to laboratory efficiency improvements, the report details advances in the understanding of the fundamental device physics and modeling of silicon solar cell operation. The latter stages of the program included the development of module-ready cells in large quantity for the EPRI prototype 500X concentrator modules. Several of these 48-cell modules are currently in the field under test.

Sinton, R.A.; Swanson, R.M. (Stanford Univ., CA (United States))

1992-02-01T23:59:59.000Z

63

Efficiency of silicon solar cells containing chromium  

DOE Patents [OSTI]

Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

1982-01-01T23:59:59.000Z

64

Origami-enabled deformable silicon solar cells  

SciTech Connect (OSTI)

Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics.

Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Tu, Hongen; Xu, Yong [Electrical and Computer Engineering, Wayne State University, 5050 Anthony Wayne Dr., Detroit, Michigan 48202 (United States); Song, Zeming; Jiang, Hanqing, E-mail: hanqing.jiang@asu.edu [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Yu, Hongyu, E-mail: hongyu.yu@asu.edu [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); School of Earth and Space Exploration, Arizona State University, Tempe, Arizona 85287 (United States)

2014-02-24T23:59:59.000Z

65

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

Ciszek, T.F.

1995-03-28T23:59:59.000Z

66

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1995-01-01T23:59:59.000Z

67

Investigating the efficiency of Silicon Solar cells at  

E-Print Network [OSTI]

Investigating the efficiency of Silicon Solar cells at different temperatures and wavelengths to study the characteristics of silicon photovoltaic cells (solar cells). We vary the wavelength of light as well as the temperature of the solar cell to investigate how the open voltage across the cell varies

Attari, Shahzeen Z.

68

Amorphous silicon passivated contacts for diffused junction silicon solar cells  

SciTech Connect (OSTI)

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

Bullock, J., E-mail: james.bullock@anu.edu.au; Yan, D.; Wan, Y.; Cuevas, A. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [École Polytechnique Fédérale de Lausanne (EPFL), Institute of micro engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory, Maladière 71, CH-200 Neuchâtel (Switzerland)

2014-04-28T23:59:59.000Z

69

Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

Mailoa, Jonathan P

2012-01-01T23:59:59.000Z

70

And the Award Goes to... Silicon Ink Solar Technology Supported...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

screen printing process, this silicon ink technology offers a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters...

71

And the Award Goes to... Silicon Ink Solar Technology Supported...  

Energy Savers [EERE]

program continues to see from investing in collaborative efforts with solar start-ups that take full advantage of the NREL's expertise and facilities. Innovalight's silicon...

72

High temperature investigations of crystalline silicon solar cell materials  

E-Print Network [OSTI]

Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

Hudelson, George David Stephen, III

2009-01-01T23:59:59.000Z

73

27. 5-percent silicon concentrator solar cells  

SciTech Connect (OSTI)

Recent advances in silicon solar cells using the backside point-contact configuration have been extended resulting in 27.5-percent efficiencies at 10 W/sq cm (100 suns, 24 C), making these the most efficient solar cells reported to date. The one-sun efficiencies under an AM1.5 spectrum normalized to 100 mW/sq cm are 22 percent at 24 C based on the design area of the concentrator cell. The improvements reported here are largely due to the incorportation of optical light trapping to enhance the absorption of weakly absorbed near bandgap light. These results approach the projected efficiencies for a mature technology which are 23-24 percent at one sun and 29 percent in the 100-350-sun (10-35 W/sq cm) range. 10 references.

Sinton, R.A.; Kwark, Y.; Gan, J.Y.; Swanson, R.M.

1986-10-01T23:59:59.000Z

74

Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,  

E-Print Network [OSTI]

alternative energy solution. KEYWORDS: Nanotexture, solar cell, heterojunction, conductive polymer, light solar cell.1 Conventional Si solar cells have p-n junctions inside for an efficient extraction of lightHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

Cui, Yi

75

Performance of Ultrathin Silicon Solar Microcells with Nanostructures of Relief  

E-Print Network [OSTI]

of the materials. Solar cells based on thin films of amorphous or polycrystalline silicon require sub- stantially, Urbana, Illinois 61801 ABSTRACT Recently developed classes of monocrystalline silicon solar microcells systems that benefit from thin construction and efficient materials utilization. KEYWORDS Nanoimprint

Rogers, John A.

76

Electrical overstress failure in silicon solar cells  

SciTech Connect (OSTI)

A solar-cell electrical-overstress-failure model and the results of experimental measurements of threshold pulsed failure currents on four types of silicon solar cells are presented. The transient EMP field surrounding a lightning stroke has been identified as a potential threat to a photovoltaic array, yet failure analysis of solar cells in a pulsed environment had not previously been reported. Failure in the low-resistivity concentrator cells at pulse widths between 1 ..mu..s and 1 ms occurred initially in the junction. Finger damage in the form of silver melting occurs at currents only slightly greater than that required for junction damage. The result of reverse-bias transient-overstress tests on high-resistivity (10 ..cap omega..cm) cells demonstrated that the predominant failure mode was due to edge currents. These flat-plate cells failed at currents of only 4 to 20 A, which is one or two orders of magnitude below the model predictions. It thus appears that high-resistivity flat-plate cells are quite vulnerable to electrical overstress which could be produced by a variety of mechanisms.

Pease, R.L.; Barnum, J.R.; van Lint, V.A.J.; Vulliet, W.V.; Wrobel, T.F.

1982-11-01T23:59:59.000Z

77

EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques  

E-Print Network [OSTI]

;3 Screen Printed Solar Cells · Firing the contacts ­ The furnace heats the cell to a high temperature by Efficiency 22 Rear Panel before Lamination 23 Buried Contact Solar Cells · High Efficiency · Laser groved1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser

Kaiser, Todd J.

78

Solar cell structure incorporating a novel single crystal silicon material  

DOE Patents [OSTI]

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

1983-01-01T23:59:59.000Z

79

Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cells  

E-Print Network [OSTI]

particles, either oxidized and/or present with multiple other metal species reminiscent of stainless steels equipment, or feedstock, and b the more numerous, homogeneously distributed, and smaller iron silicide involving atomically dissolved iron in the melt or in the crystal. It was found that iron silicide

80

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer  

DOE Patents [OSTI]

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

Carlson, David E. (Yardley, PA)

1982-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Simulation of iron impurity gettering in crystalline silicon solar cells  

E-Print Network [OSTI]

This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also ...

Powell, Douglas M. (Douglas Michael)

2012-01-01T23:59:59.000Z

82

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network [OSTI]

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

83

Silicon Valley Power- Solar Electric Buy Down Program  

Broader source: Energy.gov [DOE]

Silicon Valley Power (SVP) offers incentives for the installation of new grid-connected solar electric (photovoltaic, or PV) systems. Incentive levels will step down over the life of the program as...

84

Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga  

E-Print Network [OSTI]

-Si have long been of fundamental interest, and amorphous silicon a-Si:H /c-Si heterojunctions are now is about the current limit achieved with a-Si:H/c-Si heterojunctions. The largest VOC we ob- tained was 0Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga and E. A. Schiff

Schiff, Eric A.

85

Copper doped polycrystalline silicon solar cell  

DOE Patents [OSTI]

Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

1981-01-01T23:59:59.000Z

86

CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS  

E-Print Network [OSTI]

CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS Yongling Ren, Natalita M Nursam, Da Wang and Klaus J Weber Centre for Sustainable Energy Systems, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 0200, Australia ABSTRACT

87

CURRENT NEWS Sandwich Solar Cells May See Off Silicon  

E-Print Network [OSTI]

CURRENT NEWS Sandwich Solar Cells May See Off Silicon May 24, 2010 A new manufacturing technique of devices using GaAs chips manufactured in multilayer stacks: light sensors, high-speed transistors and solar cells. The authors also provide a detailed cost comparison. Another advantage of the multilayer

Rogers, John A.

88

Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells  

E-Print Network [OSTI]

Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells Kai Zhu a,1 , E Solar, Toano, VA 23168, USA Abstract We report infrared depletion modulation spectra for near an infrared modulation spectroscopy technique that probes the optical spectra of dopants and defects

Schiff, Eric A.

89

E-Print Network 3.0 - amorphous-silicon-based solar cell Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer Summary: light exposure as do the amorphous silicon-based...

90

NREL Develops ZnSiP2 for Silicon-Based Tandem Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Combining an Earth-abundant chalcopyrite with a silicon layer could significantly boost conversion efficiency above that of single-junction silicon solar cells.

Not Available

2014-08-01T23:59:59.000Z

91

Enabling Thin Silicon Solar Cell Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

cracking problem in silicon cell technology," says Budiman. "The ALS provides us with a light that allows us to measure and characterize molecular stress in a very quantitative...

92

Development of an In-Line Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells: Annual Subcontract Report, June 2003 (Revised)  

SciTech Connect (OSTI)

Under the PV Manufacturing R&D subcontract''Development of an In-Line, Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells'', Sinton Consulting developed prototypes for several new instruments for use in the manufacture of silicon solar cells. These instruments are based on two families of R&D instruments that were previously available, an illumination vs. open-circuit-voltage technique and the quasi-steady state RF photoconductance technique for measuring minority-carrier lifetime. Compared to the previous instruments, the new prototypes are about 20 times faster per measurement, and have automated data analysis that does not require user intervention even when confronted by challenging cases. For example, un-passivated multi-crystalline wafers with large variations in lifetime and trapping behavior can be measured sequentially without error. Five instruments have been prototyped in this project to date, including a block tester for evaluating cast or HEM silicon blocks, a CZ ingot tester, an FZ boule tester for use with long-lifetime silicon, and an in-line sample head for measuring wafers. The CZ ingot tester and the FZ boule tester are already being used within industry and there is interest in the other prototypes. For each instrument, substantial R&D work was required in developing the device physics and analysis as well as for the hardware. This work has been documented in a series of application notes and conference publications, and will result in significant improvements for both the R&D and the industrial types of instruments.

Sinton, R. A.

2004-04-01T23:59:59.000Z

93

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide p-layer structure  

E-Print Network [OSTI]

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide Received 30 October 2003; accepted 18 November 2003 We investigated a double silicon-carbide p-layer structure consisting of a undiluted p-type amorphous silicon-carbide (p-a-SiC:H) window layer and a hydrogen

Kim, Yong Jung

94

Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demsy and Sajeev John  

E-Print Network [OSTI]

Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demésy and Sajeev://jap.aip.org/about/rights_and_permissions #12;Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demesya

John, Sajeev

95

Solar power conversion efficiency in modulated silicon nanowire photonic Alexei Deinega and Sajeev John  

E-Print Network [OSTI]

Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinega://jap.aip.org/about/rights_and_permissions #12;Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinegaa that using only 1 lm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power

John, Sajeev

96

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings  

E-Print Network [OSTI]

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light ABSTRACT: Enhancing the light absorption in ultrathin-film silicon solar cells is important for improving in the back reflector. KEYWORDS: Solar cells, light trapping, antireflection, crystalline silicon, absorption

Fan, Shanhui

97

Laser micro-processing of silicon using nanosecond pulse shaped fibre laser at 1 ?m wavelength  

E-Print Network [OSTI]

). ............................................................................... 11 Figure 2.2(a): Schematic and (b) SEM image of 19.8% efficient multicrystalline silicon solar cell with “honeycomb” surface texturing (Zhao, Wang et al. 1998). (c) The “inverted pyramid” texture on the top surface (Zhao, Wang et al. 1995). (d) A... is 40 µm (Tan 2006). (c): SEM image of silicon machined by frequency tripled Nd: YAG laser (355 nm) followed by cleaning in the KOH solution (Chen and Darling 2005). (d) Profiles and SEM images (×1.5 k) of ablated a-Si under different irradiation...

Li, Kun

2012-06-12T23:59:59.000Z

98

NREL Success Stories - Quest for Inexpensive Silicon Solar Cells  

ScienceCinema (OSTI)

Scientists at the National Renewable Energy Laboratory (NREL) share their story about a successful partnership with Oak Ridge National Laboratory and the Ampulse Corporation and how support from the US Department of Energy's Technology Commercialization & Deployment Fund has helped it and their silicon solar cell research thrive.

Branz, Howard

2013-05-29T23:59:59.000Z

99

Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells  

E-Print Network [OSTI]

Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells Michael D. Kelzenberg, Daniel B-voltage measurements were made under simulated Air Mass 1.5 global illumination. Photovoltaic spectral response work by our group has shown that macroscopic Si wire arrays (>1 cm2 in area) suitable for photovoltaic

Atwater, Harry

100

The analysis and optimization of a spherical silicon solar cell  

E-Print Network [OSTI]

silicon solar cell has been estimated using a cylindrical solar cell with some modifications as an approximate model. Calculations were made for both the cylindrical model and the conventional planar cell with the aid of a Fortran IV computer program... ln the p nnd n layers, respect lvely (cm I) N(X) monochromatic photon flux incident on the solar cell (cm g sec ~ o ) N 0 number of photons/cm sec with wavelengths shorter than l. lp (cm sec ) n po' no thermal equilibrium concentration...

McKee, William Randall

1976-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells  

E-Print Network [OSTI]

Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells photovoltaic solar cell. Optical simulations performed on a complete solar cell revealed that patterning to obtain ultrathin patterned solar cells. Keywords: Photonic crystals; Epitaxial crystalline silicon; Thin

Paris-Sud XI, Université de

102

High-efficiency concentrator silicon solar cells  

SciTech Connect (OSTI)

This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1990-11-01T23:59:59.000Z

103

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents [OSTI]

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

Rohatgi, Ajeet (Marietta, GA); Chen, Zhizhang (Duluth, GA); Doshi, Parag (Atlanta, GA)

1996-01-01T23:59:59.000Z

104

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint  

SciTech Connect (OSTI)

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01T23:59:59.000Z

105

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell hal-00749873,version1-25Nov shortage until 2010. Research on epitaxial growth for thin film crystalline silicon solar cells has gained

106

Preprint 24th EU PVSEC, 2009, Hamburg FITTING OF LATERAL RESISTANCES IN SILICON SOLAR CELLS  

E-Print Network [OSTI]

Preprint 24th EU PVSEC, 2009, Hamburg FITTING OF LATERAL RESISTANCES IN SILICON SOLAR CELLS cell from electroluminescence (EL) is introduced. A two-dimensional model of the solar cell screen printed monocrystalline silicon solar cell are shown and the influence of lateral diffusion

Junk, Michael

107

Extended light scattering model incorporating coherence for thin-film silicon solar cells  

E-Print Network [OSTI]

Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non potential for light trapping in textured thin film silicon solar cells. VC 2011 American Institute

Lenstra, Arjen K.

108

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Kelsey A. Whitesell*a  

E-Print Network [OSTI]

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Crystals Kelsey A. Whitesell to enhance performance of thin film solar cells because of their unique ability to control light. We show for light trapping in thin film photovoltaics. Keywords: photonic crystals, defect, silicon, solar cell

Atwater, Harry

109

Light harvesting by planar photonic crystal in solar cells: The case of amorphous silicon  

E-Print Network [OSTI]

Light harvesting by planar photonic crystal in solar cells: The case of amorphous silicon Guillaume on light management in silicon thin film solar cells, using photonic crystals (PhC) structures. We by means of optical simulations performed on realistic thin film solar cell stacks. Theoretically

Boyer, Edmond

110

Development of Black Silicon Antireflection Control and Passivation Technology for Commercial Application: Cooperative Research and Development Final Report, CRADA Number CRD-12-475  

SciTech Connect (OSTI)

The work involves the development of a commercial manufacturing process for both multicrystalline and monocrystalline solar cells that combines Natcore's patent pending passivation technology.

Yuan, H. C.

2014-06-01T23:59:59.000Z

111

E-Print Network 3.0 - amorphous-silicon solar cells Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with silver nanoparticlessolar cells with silver nanoparticles C. Eminian, F... silicon solar cells to achieve light trapping. Nanoparticles have a size 200nm and are...

112

Defect Engineering, Cell Processing, and Modeling for High-Performance, Low-Cost Crystalline Silicon Photovoltaics  

SciTech Connect (OSTI)

The objective of this project is to close the efficiency gap between industrial multicrystalline silicon (mc-Si) and monocrystalline silicon solar cells, while preserving the economic advantage of low-cost, high-volume substrates inherent to mc-Si. Over the course of this project, we made significant progress toward this goal, as evidenced by the evolution in solar-cell efficiencies. While most of the benefits of university projects are diffuse in nature, several unique contributions can be traced to this project, including the development of novel characterization methods, defect-simulation tools, and novel solar-cell processing approaches mitigate the effects of iron impurities ("Impurities to Efficiency" simulator) and dislocations. In collaboration with our industrial partners, this project contributed to the development of cell processing recipes, specialty materials, and equipment that increased cell efficiencies overall (not just multicrystalline silicon). Additionally, several students and postdocs who were either partially or fully engaged in this project (as evidenced by the publication record) are currently in the PV industry, with others to follow.

Buonassisi, Tonio

2013-02-26T23:59:59.000Z

113

High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995  

SciTech Connect (OSTI)

The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

Maruska, P. [Spire Corp., Bedford, MA (United States)] [Spire Corp., Bedford, MA (United States)

1996-09-01T23:59:59.000Z

114

Silicon Valley Solar Inc SV Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-g Grant ofRichardton AbbeyARaftPadomaSierra Leone)Sikes ActSiGenSV Solar

115

Novel buried contact technology for advanced silicon solar cells  

SciTech Connect (OSTI)

Increased efficiency of silicon solar cells has resulted in the increased complexity and cost of manufacture. Optical properties can be enhanced by increasing the optical path length, while minimizing both bulk and surface recombination. Conventional silicon based solar cells are fabricated by a series of physical or chemical vapor deposition processes followed by photolithography and etching processes for each layer. These repeated deposition and etching cycles are not only difficult to perform but they also generate severe surface topography. This topography is a major cause of yield loss and reliability problems for advanced solar cells. These problems are especially severe for high aspect ratio contact holes. An alternative method of performing this metallization inexpensively and reliably is by the use of electroless plating. As the plating process occurs selectively on Si and not on the surface passivation layer, thick metal films (Ni and Cu) can be deposited which depend entirely upon the depth of the trench used. The advantages of electroless plating as an alternative to standard metallization will be presented.

Ni Dheasuna, C.; Mathewson, A.; Hecking, L.; Wrixon, G.T. [National Microelectronics Research Centre, Cork (Ireland)

1994-12-31T23:59:59.000Z

116

High efficiency silicon nanohole/organic heterojunction hybrid solar cell  

SciTech Connect (OSTI)

High efficiency hybrid solar cells are fabricated based on silicon with a nanohole (SiNH) structure and poly (3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). The SiNH structure is fabricated using electroless chemical etching with silver catalyst, and the heterojunction is formed by spin coating of PEDOT on the SiNH. The hybrid cells are optimized by varying the hole depth, and a maximum power conversion efficiency of 8.3% is achieved with a hole depth of 1??m. The SiNH hybrid solar cell exhibits a strong antireflection and light trapping property attributed to the sub-wavelength dimension of the SiNH structure.

Hong, Lei [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); Wang, Xincai; Zheng, Hongyu [Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); He, Lining; Wang, Hao; Rusli, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yu, Hongyu, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [South University of Science and Technology of China, Shenzhen (China)

2014-02-03T23:59:59.000Z

117

Electroabsorption measurements and built-in potentials in amorphous silicon pin solar cells  

E-Print Network [OSTI]

and the capacitance of such devices. We apply this technique to hydrogenated amorphous silicon a-Si:H -based solar-6951 96 04246-5 The internal electric fields of amporphous silicon a- Si:H -based p­i­n solar cells on electroluminescent organic heterostructure diodes . We con- firmed this interpretation by studying a-Si:H n

Schiff, Eric A.

118

FIRST SOLAR CELLS ON SILICON RIBBONS OBTAINED BY FAST CVD FROM SILANE  

E-Print Network [OSTI]

FIRST SOLAR CELLS ON SILICON RIBBONS OBTAINED BY FAST CVD FROM SILANE C. R. Pinto, J. M. Serra, M Lisboa Campo Grande, 1749-016 Lisboa, Portugal ABSTRACT: : In this paper we report our first results on solar cells made on silicon ribbons obtained by a two-step process: pre-ribbons obtained by CVD followed

Lisbon, University of

119

One-sun, single-crystalline silicon solar cell research  

SciTech Connect (OSTI)

The point-contact solar cell design, the most efficient silicon concentrator solar cell design to date, is explored for use in one-sun applications. The necessary modifications to backside-contact concentrator cell design for operation at one-sun are explored and implemented. Large-area, point-contact solar cells were fabricated on n- and p-type substrates in low-level injection (LLI). The characteristics of these LLI cells were compared to those of four different architectures of cells with substrates in high-level injection (HLI). Both types of cell achieved open-circuit voltages over 700 mV at one-sun, LLI cells had higher fill factors, and HLI cells had substantially higher short-circuit currents. The mechanisms responsible for these observations are discussed. The high V{sub oc} and J{sub sc} of the HLI cells combine to make them more efficient than the LLI cells, with efficiencies measured at Sandia up to 22.7% for a 37.5-cm{sup 2} cell at one sun. This is the highest one-sun efficiency for a silicon cell larger than 4 cm{sup 2}. Simplified, backside-contact solar cell processes were also developed, which have nearly 100% yield. Over 80 such cells, each with a 35-cm{sup 2} area or greater, were delivered to Sandia. Cells made with these simplified processes had efficiencies up to 21.3% for a 37.5-cm{sup 2} cell. The recombination properties of Si{sub 3}N{sub 4} layers over SiO{sub 2} were characterized, since Si{sub 3}N{sub 4} is an excellent antireflection coating for cells laminated under glass. Several prototype flat-plate modules of backside-contact cells were built, with up to 24 cells and efficiencies up to 19%. 26 refs., 16 figs., 4 tabs.

King, R.R.; Sinton, R.A.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1991-06-01T23:59:59.000Z

120

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents [OSTI]

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

1998-06-16T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents [OSTI]

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure.

Rohatgi, Ajeet (Marietta, GA); Doshi, Parag (Altanta, GA); Tate, John Keith (Lawrenceville, GA); Mejia, Jose (Atlanta, GA); Chen, Zhizhang (Duluth, GA)

1998-06-16T23:59:59.000Z

122

Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars  

E-Print Network [OSTI]

Monocrystalline silicon solar cells, polycrystalline silicon solar cells, and amorphous silicon (thin-film) solar

Tu, Bor-An Clayton

2013-01-01T23:59:59.000Z

123

21.9% efficient silicon bifacial solar cells  

SciTech Connect (OSTI)

This paper reports the efficiency of bifacial silicon solar cells and mini-modules fabricated at SunPower Corp. The best cell has AM1.5G front efficiency of 21.9% and rear efficiency of 13.9%. The mini-modules, each containing 20 bifacial cells, attain efficiency as high as the average efficiency of their individual cells. The best module has AM1.5G front efficiency of 20.66% and rear efficiency of 10.54%. Optical properties of the bifacial cells have also been measured and analyzed. The results show that bifacial cells, compared to monofacial cells, absorb less infrared light and thus they can operate at lower temperature in space.

Zhou, C.Z.; Verlinden, P.J.; Crane, R.A.; Swanson, R.M. [SunPower Corp., Sunnyvale, CA (United States); Sinton, R.A. [Sinton Consulting, San Jose, CA (United States)

1997-12-31T23:59:59.000Z

124

Metal catalyst technique for texturing silicon solar cells  

DOE Patents [OSTI]

Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.

Ruby, Douglas S. (Albuquerque, NM); Zaidi, Saleem H. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

125

Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Ris National Laboratory, DK-4000  

E-Print Network [OSTI]

1 Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Risø National Laboratory, DK of utilising solar energy, but this direct energy transfer does not involve the elements of focusing solar energy in a way that is economically competitive, also in regions where other energy sources

126

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell #12;2 1. Introduction: martin.labrune@polytechnique.edu ABSTRACT We report on heterojunction solar cells whose thin intrinsic

127

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell  

E-Print Network [OSTI]

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic­4]. In this context, a basic idea is to periodically texture the metallic back reflector of a thin-film solar cell

128

c e n t r e t Solar Cells Beyond Silicon  

E-Print Network [OSTI]

1 POLYMER c e n t r e t Solar Cells Beyond Silicon Keld West The Danish Polymer Centre Risø National Laboratory #12;Risø Int. Energy Conference, May 2003 2 POLYMER c e n t r e t Solar Energy · Energy Int. Energy Conference, May 2003 3 POLYMER c e n t r e t Solar Energy, Perspective · The earth

129

amorphous silicon solar: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 26 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

130

Solar Grade Silicon from Agricultural By-products  

SciTech Connect (OSTI)

In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it starts one step upstream from all other Sipv production efforts. Our process starts by producing high purity SiO2/C feedstocks from which Sipv can be produced in a single, chlorine free, final EAF step. Specifically, our unique technology, and the resultant SiO2/C product can serve as high purity feedstocks to existing metallurgical silicon (Simet) producers, allowing them to generate Sipv with existing US manufacturing infrastructure, reducing the overall capital and commissioning schedule. Our low energy, low CAPEX and OPEX process purifies the silica and carbon present in rice hull ash (RHA) at low temperatures (< 200C) to produce high purity (5-6 Ns) feedstock for production of Sipv using furnaces similar to those used to produce Simet. During the course of this project we partnered with Wadham Energy LP (Wadham), who burns 220k ton of rice hulls (RH)/yr generating 200 GWh of electricity/yr and >30k ton/yr RHA. The power generation step produces much more energy (42 kWh/kg of final silicon produced) than required to purify the RHA (5 kWh/kg of Sipv, compared to 65 kWh/kg noted above. Biogenic silica offers three very important foundations for producing high purity silicon. First, wastes from silica accumulating plants, such as rice, corn, many grasses, algae and grains, contain very reactive, amorphous silica from which impurities are easily removed. Second, plants take up only a limited set of, and minimal quantities of the heavy metals present in nature, meaning fewer minerals must be removed. Third, biomass combustion generates a product with intrinsic residual carbon, mixed at nanometer length scales with the SiO2. RHA is 80-90 wt% high surface area (20 m2/g), amorphous SiO2 with some simple mineral content mixed intimately with 5-15 wt% carbon. The mineral content is easily removed by low cost, acid washes using Mayaterials IP, leading to purified rice hull ash (RHAclean) at up to 6N purity. This highly reactive silica is partially extracted from RHAclean at 200 C in an environmentally benign process to adjust SiO2:C ratios to those needed in EA

Richard M. Laine

2012-08-20T23:59:59.000Z

131

Optimized scalable stack of fluorescent solar concentrator systems with bifacial silicon solar cells  

SciTech Connect (OSTI)

In this paper, we present a concentrator system based on a stack of fluorescent concentrators (FCs) and a bifacial solar cell. Coupling bifacial solar cells to a stack of FCs increases the performance of the system and preserves its efficiency when scaled. We used an approach to optimize a fluorescent solar concentrator system design based on a stack of multiple fluorescent concentrators (FC). Seven individual fluorescent collectors (20?mm?×?20?mm?×?2?mm) were realized by in-situ polymerization and optically characterized in regard to their ability to guide light to the edges. Then, an optimization procedure based on the experimental data of the individual FCs was carried out to determine the stack configuration that maximizes the total number of photons leaving edges. Finally, two fluorescent concentrator systems were realized by attaching bifacial silicon solar cells to the optimized FC stacks: a conventional system, where FC were attached to one side of the solar cell as a reference, and the proposed bifacial configuration. It was found that for the same overall FC area, the bifacial configuration increases the short-circuit current by a factor of 2.2, which is also in agreement with theoretical considerations.

Martínez Díez, Ana Luisa, E-mail: a.martinez@itma.es [Fundación ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avilés (Spain); Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Gutmann, Johannes; Posdziech, Janina; Rist, Tim; Goldschmidt, Jan Christoph [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Plaza, David Gómez [Fundación ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avilés (Spain)

2014-10-21T23:59:59.000Z

132

(Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor-and solar-  

E-Print Network [OSTI]

Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor- and solar- grade and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips China, 49%; Russia, 20

133

Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modeling  

E-Print Network [OSTI]

The evolution during silicon solar cell processing of performance-limiting iron impurities is investigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrial phosphorus diffusion, bulk ...

Fenning, David P.

134

Co-optimizing silicon solar cell processing for efficiency and throughput  

E-Print Network [OSTI]

Crystalline silicon solar cells are a proven renewable energy technology, but they have yet to reach low costs commensurate with subsidy-free, grid-scale adoption. To achieve the widespread adoption of photovoltaics, the ...

Morishige, Ashley E. (Ashley Elizabeth)

2013-01-01T23:59:59.000Z

135

Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint  

SciTech Connect (OSTI)

We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer.

Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q.; Branz, H. M.; Meier, D. L.

2008-05-01T23:59:59.000Z

136

Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells  

SciTech Connect (OSTI)

Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ?1.55?nm, achieve the best carrier-selectivity producing a contact resistivity ?{sub c} of ?3 m? cm{sup 2} and a recombination current density J{sub 0c} of ?40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350?°C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

Bullock, J., E-mail: james.bullock@anu.edu.au; Cuevas, A.; Yan, D. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Micro Engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory PVLab, Maladière 71b, CH-200 Neuchâtel (Switzerland)

2014-10-28T23:59:59.000Z

137

FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS  

E-Print Network [OSTI]

FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS of Michigan, Ann Arbor, MI 48109, USA ABSTRACT Hydrogenated amorphous silicon (a-Si:H) single- junction solar). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains

Deng, Xunming

138

19.4% -EFFICIENT LARGE AREA REAR-PASSIVATED SCREEN-PRINTED SILICON SOLAR CELLS T. Dullweber*1  

E-Print Network [OSTI]

be reduced by applying the PERC (passivated emitter and rear cell) solar cell design [8]. The following19.4% -EFFICIENT LARGE AREA REAR-PASSIVATED SCREEN-PRINTED SILICON SOLAR CELLS T. Dullweber*1 , S% in the near future. Keywords: Silicon Solar Cell, Screen Printing, Rear Passivation 1 Introduction About 80

139

PROCEEDINGS O F THE IEEE, VOL.56, NO. 1, JANUARY196837 [`I J. J. Wysocki,"Lithium-doped radiation-resistant silicon solar  

E-Print Network [OSTI]

,"Lithium-doped radiation-resistant silicon solar cells," IEEE Trans. Nuclear Science. vol.NS-13, pp. 168-173, December 1966 damagein semiconductorsXI1: Effects ofhighenergy electrons in silicon and silicon solar cells," Contract NAS 5-3805, May 25, 1966. 14] R. V. Tauke, "Thermal annealing of irradiated n-on-p silicon solar cells

Teich, Malvin C.

140

Amorphous silicon cell array powered solar tracking apparatus  

DOE Patents [OSTI]

An array of an even number of amorphous silicon solar cells are serially connected between first and second terminals of opposite polarity. The terminals are connected to one input terminal of a DC motor whose other input terminal is connected to the mid-cell of the serial array. Vane elements are adjacent the end cells to selectively shadow one or the other of the end cells when the array is oriented from a desired attitude relative to the sun. The shadowing of one cell of a group of cells on one side of the mid-cell reduces the power of that group substantially so that full power from the group of cells on the other side of the mid-cell drives the motor to reorient the array to the desired attitude. The cell groups each have a full power output at the power rating of the motor. When the array is at the desired attitude the power output of the two groups of cells balances due to their opposite polarity so that the motor remains unpowered.

Hanak, Joseph J. (Lawrenceville, NJ)

1985-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Silicon heterojunction solar cell with passivated hole selective MoO{sub x} contact  

SciTech Connect (OSTI)

We explore substoichiometric molybdenum trioxide (MoO{sub x}, x?silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711?mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO{sub x}, we observe a substantial gain in photocurrent of 1.9?mA/cm{sup 2} in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

Battaglia, Corsin; Yin, Xingtian; Zheng, Maxwell; Javey, Ali, E-mail: ajavey@eecs.berkeley.edu [Electrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Martín de Nicolás, Silvia; De Wolf, Stefaan; Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne, 2000 Neuchâtel (Switzerland)

2014-03-17T23:59:59.000Z

142

Comparison of electronic structure of as grown and solar grade silicon samples  

SciTech Connect (OSTI)

A comparison of the electronic structure of two different types of silicon materials viz., (i) as grown silicon and (ii) solar silicon has been carried out utilizing maximum entropy method and pair distribution function using powder X-ray data sets. The precise electron density maps have been elucidated for the two samples. The covalent nature of the bonding between atoms in both the samples is found to be well pronounced and clearly seen from the electron density maps. The electron densities at the middle of the Si-Si bond are found to be 0.47 and 0.45 e/A{sup 3} for as grown silicon and solar silicon respectively. In this work, the local structural information has also been obtained by analyzing the atomic pair distribution functions of these two samples.

Saravanan, R., E-mail: saragow@dataone.in; Sheeba, R. A. J. R. [Madura College, Research Centre and PG Department of Physics (India)

2012-04-15T23:59:59.000Z

143

Nanoscale photon management in silicon solar cells Sangmoo Jeong, Shuang Wang, and Yi Cui  

E-Print Network [OSTI]

benefits. For power generation, low-cost fossil fuel has, however, been pre- ferred to renewable energy and wind, can be accessed easily in most of the world. In particular, the solar energy deliveredNanoscale photon management in silicon solar cells Sangmoo Jeong, Shuang Wang, and Yi Cui Citation

Cui, Yi

144

Atomic Structure of Interface States in Silicon Heterojunction Solar Cells B. M. George,1  

E-Print Network [OSTI]

silicon (a-Si:H=c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic identify the microscopic origin of the conduction band tail state in the a-Si:H layer, and (iv) present-efficiency solar cells, is formed at the a-Si: H=c-Si interface [8]. Here, similar to other crystalline- amorphous

Schmidt, Wolf Gero

145

A FREEWARE 1D EMITTER MODEL FOR SILICON SOLAR CELLS Keith R. McIntosh  

E-Print Network [OSTI]

Centre for Sustainable Energy Systems, Australian National University, Canberra, ACT 0200, AUSTRALIA 2 Leibniz University of Hannover, Inst. of Solid-State Physics, Dep. Solar Energy, Appelstrasse 2, 30167A FREEWARE 1D EMITTER MODEL FOR SILICON SOLAR CELLS Keith R. McIntosh 1 and Pietro P. Altermatt 2 1

146

High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells  

E-Print Network [OSTI]

. Figure 3-1 IV curve of a UT fabricated triple cell, showing 12.7% initial, active-area efficiency. Figure1 High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells PHASE I Annual-junction a-Si Solar Cells with Heavily Doped Thin Interface Layers at the Tunnel Junctions Section 4 High

Deng, Xunming

147

Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar  

E-Print Network [OSTI]

1 Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar Cell Decorated_yang@berkeley.edu. #12;2 Fabrication of the suspended single-nanowire solar cells Trench substrates were fabricated from of a quartz tube in a tube furnace. Reactions to grow wires bridging the trenches lasted from 15 to 45 mins

Yang, Peidong

148

Device physics and characterization of silicon point-contact solar cells  

SciTech Connect (OSTI)

The silicon point-contact solar cell is a candidate solar cell for use in highly concentrated sunlight. Recent progress is described for a point-contact solar cell optimized for incident power densities of 36 Watts/cm/sup 2/. The design and fabrication for several device runs is discussed in detail. Extensive data from these solar cells is presented in order to display the major trends in device design and performance. The data culminate in a solar cell that is 28% efficient for incident power densities between 4 and 15 watts/cm/sup 2/ at 25/sup 0/C. Utilizing measurements from several runs of solar cells, a three-dimensional model is compared to the data in order to establish a strong baseline case from which future design enhancements can be evaluated. A modeling study of the optimum geometries for point-contact solar cells provides the context for a discussion of the device physics of the solar-cell operation. These studies indicate that efficiencies exceeding 30% may soon be attained. The ultimate efficiency of silicon solar cells will be limited parasitic Auger recombination. With the model, a device is optimized to measure the carrier lifetimes in highly-injected silicon in the carrier density range of interest for solar cell operation, 1 X 10/sup 15/ to 2 x 10/sup 17/ carriers/cm/sup 2/.

Sinton, R.A.

1987-01-01T23:59:59.000Z

149

Study of the recombination on silicon micropillar solar cells by impedance spectroscopy  

E-Print Network [OSTI]

Study of the recombination on silicon micropillar solar cells by impedance spectroscopy Armand Equivalent circuit of a solar cell in AC mode In alternative current, a solar cell can be modelled as: · RP IV curve For small amplitude sine waves: I = dI dE E0,I0 � E + 1 2 d2I dE2 E0,I0 � E2 + ... dI dE E0

Candea, George

150

Novel Approach for Selective Emitter Formation and Front Side Metallization of Crystalline Silicon Solar Cells  

SciTech Connect (OSTI)

In this project we will explore the possibility of forming the front side metallization and selective emitter layer for the crystalline silicon solar cells through using selective laser ablation to create contact openings on the front surface and a screen printer to make connections with conductive paste. Using this novel approach we expect to reduce the specific contact resistance of the silver gridlines by about one order of magnitude compared to the state-of-art industrial crystalline silicon solar cells to below 1 m??cm2, and use lightly doped n+ emitter layer with sheet resistance of not smaller than 100 ?/?. This represents an enabling improvement on crystalline silicon solar cell performance and can increase the absolute efficiency of the solar cell by about 1%. In this scientific report we first present our result on the selective laser ablation of the nitride layer to make contact openings. Then we report our work on the solar cell fabrication by using the laser ablated contact openings with self-doping paste. Through various electrical property characterization and SIMS analysis, the factors limiting the cell performance have been discussed. While through this proof-of-concept project we could not reach the target on cell efficiency improvement, the process to fabricate 125mm full-sized silicon solar cells using laser ablation and self-doping paste has been developed, and a much better understanding of technical challenges has been achieved. Future direction to realize the potential of the new technology has been clearly defined.

Baomin Xu

2010-07-28T23:59:59.000Z

151

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010  

SciTech Connect (OSTI)

In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Kumar, A.; Ravi, K. V.

2011-06-01T23:59:59.000Z

152

Fundamental understanding and development of low-cost, high-efficiency silicon solar cells  

SciTech Connect (OSTI)

The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

2000-05-01T23:59:59.000Z

153

Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars  

E-Print Network [OSTI]

Monocrystalline silicon solar cells, polycrystalline silicon solar cells, and amorphous silicon (thin-film)

Tu, Bor-An Clayton

2013-01-01T23:59:59.000Z

154

Development of Novel Front Contract Pastes for Crystalline Silicon Solar Cells  

SciTech Connect (OSTI)

In order to improve the efficiencies of silicon solar cells, paste to silicon contact formation mechanisms must be more thoroughly understood as a function of paste chemistry, wafer properties and firing conditions. Ferro Corporation has been involved in paste development for over 30 years and has extensive expertise in glass and paste formulations. This project has focused on the characterization of the interface between the top contact material (silver paste) and the underlying silicon wafer. It is believed that the interface between the front contact silver and the silicon wafer plays a dominant role in the electrical performance of the solar cell. Development of an improved front contact microstructure depends on the paste chemistry, paste interaction with the SiNx, and silicon (“Si”) substrate, silicon sheet resistivity, and the firing profile. Typical front contact ink contains silver metal powders and flakes, glass powder and other inorganic additives suspended in an organic medium of resin and solvent. During fast firing cycles glass melts, wets, corrodes the SiNx layer, and then interacts with underlying Si. Glass chemistry is also a critical factor in the development of an optimum front contact microstructure. Over the course of this project, several fundamental characteristics of the Ag/Si interface were documented, including a higher-than-expected distribution of voids along the interface, which could significantly impact electrical conductivity. Several techniques were also investigated for the interfacial analysis, including STEM, EDS, FIB, EBSD, and ellipsometry.

Duty, C.; Jellison, D. G.E. P.; Joshi, P.

2012-04-05T23:59:59.000Z

155

Silicon Ink Technology Offers Path to Higher Efficiency Solar...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

startup companies cross technological barriers to commercialization while encouraging private investment. The Solar Energy Technologies Office (SETO) focuses on achieving the...

156

A Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates.  

E-Print Network [OSTI]

A Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates. Michelle J. Mc Cann, Kylie R. Catchpole, Klaus J. Weber and Andrew W. Blakers Centre for Sustainable Energy Systems Engineering Department, The Australian National University, ACT 0200, Australia. Email : michelle

157

Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias  

DOE Patents [OSTI]

Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.

Gee, James M; Schmit, Russell R.

2007-01-30T23:59:59.000Z

158

Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,,  

E-Print Network [OSTI]

Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,, Xingtian Yin,,,§, Maxwell, University of California, Berkeley, California 94720, United States Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States § Electronic Materials Research

Javey, Ali

159

Transmissive metallic contact for amorphous silicon solar cells  

DOE Patents [OSTI]

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Madan, A.

1984-11-29T23:59:59.000Z

160

Cost-Effective Silicon Wafers for Solar Cells: Direct Wafer Enabling Terawatt Photovoltaics  

SciTech Connect (OSTI)

Broad Funding Opportunity Announcement Project: 1366 is developing a process to reduce the cost of solar electricity by up to 50% by 2020—from $0.15 per kilowatt hour to less than $0.07. 1366’s process avoids the costly step of slicing a large block of silicon crystal into wafers, which turns half the silicon to dust. Instead, the company is producing thin wafers directly from molten silicon at industry-standard sizes, and with efficiencies that compare favorably with today’s state-of-the-art technologies. 1366’s wafers could directly replace wafers currently on the market, so there would be no interruptions to the delivery of these products to market. As a result of 1366’s technology, the cost of silicon wafers could be reduced by 80%.

None

2010-01-15T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells  

E-Print Network [OSTI]

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells. de Bariloche, Argentina 3 ECN Solar Energy, High Tech Campus, Building 5, 5656 AE Eindhoven energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar

Dunin-Borkowski, Rafal E.

162

Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon  

SciTech Connect (OSTI)

We report an enhanced conversion efficiency of femtosecond-laser treated silicon solar cells by surface modification of anisotropic-etching. The etching improves minority carrier lifetime inside modified black silicon area substantially; moreover, after the etching, an inverted pyramids/upright pyramids mixed texture surface is obtained, which shows better photon capturing capability than that of conventional pyramid texture. Combing of these two merits, the reformed solar cells show higher conversion efficiency than that of conventional pyramid textured cells. This work presents a way for fabricating high performance silicon solar cells, which can be easily applied to mass-production.

Chen, H. Y.; Peng, Y., E-mail: gdyuan@semi.ac.cn, E-mail: py@usst.edu.cn; Hong, M.; Zhang, Y. B.; Cai, Bin; Zhu, Y. M. [Shanghai Key Lab of Modern Optical System and Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai 200093 (China); Yuan, G. D., E-mail: gdyuan@semi.ac.cn, E-mail: py@usst.edu.cn; Zhang, Y.; Liu, Z. Q.; Wang, J. X.; Li, J. M. [Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-05-12T23:59:59.000Z

163

In-Line Crack and Stress Detection in Silicon Solar Cells Using Resonance Ultrasonic Vibrations  

SciTech Connect (OSTI)

Statement of Problem and Objectives. Wafer breakage in automated solar cell production lines is identified as a major technical problem and a barrier for further cost reduction of silicon solar module manufacturing. To the best of our knowledge, there are no commercial systems addressing critical needs for in-line inspection of the mechanical quality of solar wafers and cells. The principal objective of the SBIR program is to validate through experiments and computer modeling the applicability of the Resonance Ultrasonic Vibrations system, which ultimately can be used as a real-time in-line manufacturing quality control tool for fast detection of mechanically unstable silicon solar cells caused by cracks. The specific objective of Phase II is to move the technology of in-line crack detection from the laboratory level to commercial demonstration through development of a system prototype. The fragility of silicon wafers possessing low mechanical strength is attributed to peripheral and bulk millimeter-length cracks. The research program is based on feasibility results obtained during Phase I, which established that: (i) the Resonance Ultrasonic Vibrations method is applicable to as-cut, processed wafers and finished cells; (ii) the method sensitivity depends on the specific processing step; it is highest in as-cut wafers and lowest in wafers with metallization pattern and grid contacts; (iii) the system is capable of matching the 2.0 seconds per wafer throughput rate of state-of-art solar cell production lines; (iv) finite element modeling provides vibration mode analysis along with peak shift versus crack length and crack location dependence; (v) a high 91% crack rejection rate was confirmed through experimentation and statistical analysis. The Phase II project has the following specific tasks: (i) specify optimal configurations of the in-line system�¢����s component hardware and software; (ii) develop and justify a system prototype that meets major specifications for an in-line crack detection unit, such as high throughput rate, high level of stability, reproducibility of data acquisition and analysis, and high sensitivity with respect to crack length and crack location; (iii) design a system platform that allows easy integration within and adaptation to various solar cell belt-type production lines; (iv) develop a testing protocol providing quality certification of the production-grade system. Commercial Application of the proposed activity consists of bringing to the solar market a new high-tech product based on an innovative solution and patented methodology to contribute to cost reduction of silicon solar module production. The solar industry, with crystalline silicon as a dominant segment, shows outstanding performance, with approximately 25% yearly growth during the last years. Despite a slowdown with only 5.6 GW installations in 2009, solar module production for the 2010 and 2011 years was recovered. According to European Photonics Industry Consortium new solar PV installations grow by 56% compared to 2010 reached 64.7 GW in 2011. Revenues in the PV industry reached a record high of $93 billion in 2011, a 13.4 percent gain over 2010 â�� and 150 percent over 2009. This growth was forecasted to continue in 2013 with double digits growth. The solar industry is economically driven to make solar panels of the highest conversion efficiency and reliability at the lowest production cost. The Resonance Ultrasonic Vibration system addresses critical needs of the silicon-based solar industry by providing a quality control method and tool, which will improve productivity, increase reliability of products and reduce manufacturing cost of solar panels.

Ostapenko, Sergei

2013-04-03T23:59:59.000Z

164

14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Summary of Discussion Sessions  

SciTech Connect (OSTI)

The 14th Workshop discussion sessions addressed funding needs for Si research and for R&D to enhance U.S. PV manufacturing. The wrap-up session specifically addressed topics for the new university silicon program. The theme of the workshop, Crystalline Silicon Solar Cells: Leapfrogging the Barriers, was selected to reflect the astounding progress in Si PV technology during last three decades, despite a host of barriers and bottlenecks. A combination of oral, poster, and discussion sessions addressed recent advances in crystal growth technology, new cell structures and doping methods, silicon feedstock issues, hydrogen passivation and fire through metallization, and module issues/reliability. The following oral/discussion sessions were conducted: (1) Technology Update; (2) Defects and Impurities in Si/Discussion; (3) Rump Session; (4) Module Issues and Reliability/Discussion; (5) Silicon Feedstock/Discussion; (6) Novel Doping, Cells, and Hetero-Structure Designs/Discussion; (7) Metallization/Silicon Nitride Processing/Discussion; (8) Hydrogen Passivation/Discussion; (9) Characterization/Discussion; and (10) Wrap-Up. This year's workshop lasted three and a half days and, for the first time, included a session on Si modules. A rump session was held on the evening of August 8, which addressed efficiency expectations and challenges of c Si solar cells/modules. Richard King of DOE and Daren Dance of Wright Williams& Kelly (formerly of Sematech) spoke at two of the luncheon sessions. Eleven students received Graduate Student Awards from funds contributed by the PV industry.

Sopori, B.; Tan, T.; Sinton, R.; Swanson, D.

2004-10-01T23:59:59.000Z

165

Rapid Thermal Processing of High Efficiency n-Type Silicon Solar Cells with Al Back Junction  

SciTech Connect (OSTI)

In this paper we report on the design, fabrication and modeling of 49 cm{sup 2}, 200-{micro}m thick, 1-5 {Omega}-cm, n- and p-type <111> and <100> screen-printed silicon solar cells. A simple process involving RTP front surface phosphorus diffusion, low frequency PECVD silicon nitride deposition, screen-printing of Al metal and Ag front grid followed by co-firing of front and back contacts produced cell efficiencies of 15.4% on n-type <111> Si, 15.1% on n-type <100> Si, 15.8% on p-type <111> Si and 16.1% on p-type <100> Si. Open circuit voltage was comparable for n and p type cells and was also independent of wafer orientation. High fill factor values (0.771-0.783) for all the devices ruled out appreciable shunting which has been a problem for the development of co-fired n-type <100> silicon solar cells with Al back junction. Model calculations were performed using PC1D to support the experimental results and provide guidelines for achieving >17% n-type silicon solar cells by rapid firing of Al back junction.

Ebong, A.; Upadhyaya, V.; Rounsaville, B.; Kim, D. S.; Meemongkolkiat, V.; Rohatgi, A.; Al-Jassim, M. M.; Jones, K. M.; To, B.

2006-01-01T23:59:59.000Z

166

Methods for manufacturing geometric multi-crystalline cast materials  

DOE Patents [OSTI]

Methods are provided for casting one or more of a semi-conductor, an oxide, and an intermetallic material. With such methods, a cast body of a geometrically ordered multi-crystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm.

Stoddard, Nathan G

2013-11-26T23:59:59.000Z

167

Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells  

E-Print Network [OSTI]

Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

Sheng, Xing

168

High-temperature defect engineering for silicon solar cells : predictive process simulation and synchrotron-based microcharacterization  

E-Print Network [OSTI]

Efficiency is a major lever for cost reduction in crystalline silicon solar cells, which dominate the photovoltaics market but cannot yet compete subsidy-free in most areas. Iron impurities are a key performance-limiting ...

Fenning, David P

2013-01-01T23:59:59.000Z

169

HIGH-EFFICIENCY BACK-JUNCTION SILICON SOLAR CELL WITH AN IN-LINE EVAPORATED ALUMINUM FRONT GRID  

E-Print Network [OSTI]

HIGH-EFFICIENCY BACK-JUNCTION SILICON SOLAR CELL WITH AN IN-LINE EVAPORATED ALUMINUM FRONT GRID M-diffused back-junction emitter. The aluminum front side grid is evaporated in an industrial-type in-thick silicon shadow masks for the in-line evaporation of the aluminum front grid. The masks are fabricated

170

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon  

DOE Patents [OSTI]

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Kaschmitter, J.L.; Sigmon, T.W.

1995-10-10T23:59:59.000Z

171

Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes; Summary Discussion Sessions  

SciTech Connect (OSTI)

This report is a summary of the panel discussions included with the Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme of the workshop was ''Supporting the Transition to World Class Manufacturing.'' This workshop provided a forum for an informal exchange of information between researchers in the photovoltaic and nonphotovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helped establish a knowledge base that can be used for improving device-fabrication processes to enhance solar-cell performance and reduce cell costs. It also provided an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research.

Sopori, B.; Swanson, D.; Sinton, R.; Stavola, M.; Tan, T.

1998-12-08T23:59:59.000Z

172

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon  

DOE Patents [OSTI]

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Kaschmitter, James L. (Pleasanton, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

173

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process  

DOE Patents [OSTI]

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas. 5 figs.

Ruby, D.S.; Schubert, W.K.; Gee, J.M.

1999-02-16T23:59:59.000Z

174

Light Trapping for Thin Silicon Solar Cells by Femtosecond Laser Texturing: Preprint  

SciTech Connect (OSTI)

Femtosecond laser texturing is used to create nano- to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 um thick. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit.

Lee, B. G.; Lin, Y. T.; Sher, M. J.; Mazur, E.; Branz, H. M.

2012-06-01T23:59:59.000Z

175

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process  

DOE Patents [OSTI]

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

Ruby, Douglas S. (Albuquerque, NM); Schubert, William K. (Albuquerque, NM); Gee, James M. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

176

17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

Sopori, B. L.

2007-08-01T23:59:59.000Z

177

Low temperature front surface passivation of interdigitated back contact silicon heterojunction solar cell  

SciTech Connect (OSTI)

The interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell requires a low temperature front surface passivation/anti-reflection structure. Conventional silicon surface passivation using SiO2 or a-SiNx is performed at temperature higher than 400°C, which is not suitable for the IBC-SHJ cell. In this paper, we propose a PECVD a-Si:H/a-SiNx:H/a-SiC:H stack structure to passivate the front surface of crystalline silicon at low temperature. The optical properties and passivation quality of this structure are characterized and solar cells using this structure are fabricated. With 2 nm a-Si:H layer, the stack structure exhibits stable passivation with effective minority carrier lifetime higher than 2 ms, and compatible with IBC-SHJ solar cell processing. A critical advantage of this structure is that the SiC allows it to be HF resistant, thus it can be deposited as the first step in the process. This protects the a-Si/c-Si interface and maintains a low surface recombination velocity.

Shu, Brent; Das, Ujjwal; Jani, Omkar; Hegedus, Steve; Birkmire, Robert

2009-06-08T23:59:59.000Z

178

Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate  

E-Print Network [OSTI]

Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light://jap.aip.org/about/rights_and_permissions #12;Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light require light-trapping schemes that are predominantly based on depositing the solar cells on rough

Psaltis, Demetri

179

Phase 2 of the array automated assembly task for the low cost silicon solar array project. Final report  

SciTech Connect (OSTI)

Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process proposed by Motorola, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work has directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The Motorola process was compared with simple electroless nickel plating in a series of parallel experiments. Results are presented. (WHK)

Petersen, R.C.

1980-11-01T23:59:59.000Z

180

ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL SUBSTRATES  

E-Print Network [OSTI]

ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL specific power for space application, we deposited a-Si thin film solar cells on ultra-thin stainless steel-thin stainless steel (SS) substrates (down to 7.5 pm) for space power applications. In this paper, we report our

Deng, Xunming

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


181

CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE-PASSIVATED SCREEN-PRINTED ALUMINUM-ALLOYED REAR EMITTER  

E-Print Network [OSTI]

THE ALU+ CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE- PASSIVATED SCREEN-PRINTED ALUMINUM stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n + np + solar cell structure, the so-called ALU + cell. An independently confirmed

182

Review of Back Contact Silicon Solar Cells for Low-Cost Application  

SciTech Connect (OSTI)

Back contact solar cells hold significant promise for increased performance in photovoltaics for the near future. Two major advantages which these cells possess are a lack of grid shading loss and coplanar interconnection. Front contacted cells can have up to 10% shading loss when using screen printed metal grids. A front contact cell must also use solder connections which run from the front of one cell to the back of the next for series interconnection. This procedure is more difficult to automate than the case of co-planar contacts. The back contact cell design is not a recent concept. The earliest silicon solar cell developed by Bell Labs was a back contact device. There have been many design modifications to the basic concept over the years. To name a few, there is the Interdigitated Back Contact (IBC) cell, the Stanford Point contact solar cell, the Emitter Wrap Through (EWT), and its many variations. A number of these design concepts have demonstrated high efficiency. The SunPower back contact solar cell holds the efficiency record for silicon concentrator cells. The challenge is to produce a high efficiency cell at low cost using high throughput techniques. This has yet to be achieved with a back contact cell design. The focus of this paper will be to review the relevant features of back contact cells and progress made toward the goal of a low cost version of this device.

Smith, David D.

1999-08-04T23:59:59.000Z

183

Production of solar grade (SoG) silicon by refining liquid metallurgical grade (MG) silicon: Annual Report: June 10 1998--October 19, 1999  

SciTech Connect (OSTI)

Pyro-metallurgical refining techniques are being developed for use with molten metallurgical-grade (MG) silicon so that directionally solidified refined MG silicon can be used as solar-grade (SoG) silicon feedstock for photovoltaic applications. The most problematic impurity elements are B and P because of their high segregation coefficients. Refining processes such as evacuation, formation of impurity complexes, oxidation of impurities, and slagging have been effective in removal of impurities from MG silicon. Charge sizes have been scaled up to 60 kg. Impurity analysis of 60-kg charges after refining and directional solidification has shown reduction of most impurities to <1 ppma and B and P to the 10-ppma level. It has been demonstrated that B and P, as well as other impurities, can be reduced from MG silicon. Further reduction of impurities will be necessary for use as SoG silicon. The procedures developed are simple and scaleable to larger charge sizes and carried out in a foundry or MG silicon production plant. Therefore, SoG silicon production using these procedures should be at low cost.

Khattak, C.P.; Joyce, D.B.; Schmid, F.

1999-12-13T23:59:59.000Z

184

Investigation of porous alumina as a self-assembled diffractive element to facilitate light trapping in thin film silicon solar cells  

E-Print Network [OSTI]

Thin film solar cells are currently being investigated as an affordable alternative energy source because of the reduced material cost. However, these devices suffer from low efficiencies, compared to silicon wafer solar ...

Coronel, Naomi (Naomi Cristina)

2009-01-01T23:59:59.000Z

185

13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers  

SciTech Connect (OSTI)

The 13th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. It will offer an excellent opportunity for researchers in private industry and at universities to prioritize mutual needs for future collaborative research. The workshop is intended to address the fundamental aspects of impurities and defects in silicon: their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. A combination of oral, poster, and discussion sessions will review recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands.

Sopori, B. L.; Rand, J.; Saitoh, T.; Sinton, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.; Al-Jassim, M.

2003-08-01T23:59:59.000Z

186

Photonic assisted light trapping integrated in ultrathin crystalline silicon solar cells by nanoimprint lithography  

E-Print Network [OSTI]

We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic nanopatterning, a better in-coupling and trapping of light is achieved, resulting in an absorption enhancement. The proposed light trapping mechanism can be explained as the superposition of a graded index effect and of the diffraction of light inside the photoactive layer. The absorption enhancement is translated into a 23% increase in short-circuit current, as compared to the benchmark cell, resulting in an increase in energy-conversion efficiency.

Trompoukis, Christos; Depauw, Valérie; Gordon, Ivan; Poortmans, Jef; 10.1063/1.4749810.

2012-01-01T23:59:59.000Z

187

Amorphous Silicon Solar cells with a Core-Shell Nanograting Structure  

E-Print Network [OSTI]

We systematically investigate the optical behaviors of an amorphous silicon solar cell based on a core-shell nanograting structure. The horizontally propagating Bloch waves and Surface Plasmon Polariton (SPP) waves lead to significant absorption enhancements and consequently short-circuit current enhancements of this structure, compared with the conventional planar one. The perpendicular carrier collection makes this structure optically thick and electronically thin. An optimal design is achieved through full-field numerical simulation, and physical explanation is given. Our numerical results show that this configuration has ultrabroadband, omnidirectional and polarization-insensitive responses, and has a great potential in photovoltaics.

Yang, L; Okuno, Y; He, S

2011-01-01T23:59:59.000Z

188

Phase 2 of the array automated assembly task for the low cost silicon solar array project. Fifth quarterly report  

SciTech Connect (OSTI)

This program focuses attention on one key step of a proposed process sequence for mass production of inexpensive silicon solar arrays for terrestrial use. The process step of concern is the metallization of the solar cell. Solarex has proposed that the metallization be accomplished by a single electroless plating of nickel followed by a dip in molten solder, and Solarex manufactures solar cells using this procedure. ing, cleaning and annealing. Motorola has recommended a process which includes the electroless nickel plate and solder dip of the Solarex process, but which precedes these steps with a number of additional steps of palladium plating, cleaning and annealing. Motorola has claimed that these additional steps are necessary to assure proper ohmic contact with the silicon while at the same time avoiding excessive nickel penetration into the silicon. This program comprises a technical comparison of the Solarex and Motorola processes. Progress is reported.

Petersen, R.C.; Anderson, J.R.

1980-01-01T23:59:59.000Z

189

Ninth workshop on crystalline silicon solar cell materials and processes: Summary discussion sessions  

SciTech Connect (OSTI)

This report is a summary of the panel discussions included with the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme for the workshop was ``R and D Challenges and Opportunities in Si Photovoltaics.'' This theme was chosen because it appropriately reflects a host of challenges that the growing production of Si photovoltaics will be facing in the new millennium. The anticipated challenges will arise in developing strategies for cost reduction, increased production, higher throughput per manufacturing line, new sources of low-cost Si, and the introduction of new manufacturing processes for cell production. At the same time, technologies based on CdTe and CIS will come on line posing new competition. With these challenges come new opportunities for Si PV to wean itself from the microelectronics industry, to embark on a more aggressive program in thin-film Si solar cells, and to try new approaches to process monitoring.

Sopori, B.; Tan, T.; Swanson, D.; Rosenblum, M.; Sinton, R.

1999-11-23T23:59:59.000Z

190

Black Silicon Solar Thin-film Microcells Integrating Top Nanocone Structures for Broadband and Omnidirectional Light-Trapping  

E-Print Network [OSTI]

Recently developed classes of monocrystalline silicon solar microcells (u-cell) can be assembled into modules with characteristics (i.e., mechanically flexible forms, compact concentrator designs, and high-voltage outputs) that would be impossible to achieve using conventional, wafer-based approaches. In this paper, we describe a highly dense, uniform and non-periodic nanocone forest structure of black silicon (bSi) created on optically-thin (30 um) u-cells for broadband and omnidirectional light-trapping with a lithography-free and high-throughput plasma texturizing process. With optimized plasma etching conditions and a silicon nitride passivation layer, black silicon u-cells, when embedded in a polymer waveguiding layer, display dramatic increases of as much as 65.7% in short circuit current, as compared to a bare silicon device. The conversion efficiency increases from 8% to 11.5% with a small drop in open circuit voltage and fill factor.

Xu, Zhida; Brueckner, Eric P; Li, Lanfang; Jiang, Jing; Nuzzo, Ralph G; Liu, Gang L

2014-01-01T23:59:59.000Z

191

Lithography-free sub-100nm nanocone array antireflection layer for low-cost silicon solar cell  

E-Print Network [OSTI]

High density and uniformity sub-100nm surface oxidized silicon nanocone forest structure is created and integrated onto the existing texturization microstructures on photovoltaic device surface by a one-step high throughput plasma enhanced texturization method. We suppressed the broadband optical reflection on chemically textured grade-B silicon solar cells for up to 70.25% through this nanomanufacturing method. The performance of the solar cell is improved with the short circuit current increased by 7.1%, fill factor increased by 7.0%, conversion efficiency increased by 14.66%. Our method demonstrates the potential to improve the photovoltaic device performance with low cost high and throughput nanomanufacturing technology.

Xu, Zhida

2014-01-01T23:59:59.000Z

192

Reaching Grid Parity Using BP Solar Crystalline Silicon Technology: A Systems Class Application  

SciTech Connect (OSTI)

The primary target market for this program was the residential and commercial PV markets, drawing on BP Solar's premium product and service offerings, brand and marketing strength, and unique routes to market. These two markets were chosen because: (1) in 2005 they represented more than 50% of the overall US PV market; (2) they are the two markets that will likely meet grid parity first; and (3) they are the two market segments in which product development can lead to the added value necessary to generate market growth before reaching grid parity. Federal investment in this program resulted in substantial progress toward the DOE TPP target, providing significant advancements in the following areas: (1) Lower component costs particularly the modules and inverters. (2) Increased availability and lower cost of silicon feedstock. (3) Product specifically developed for residential and commercial applications. (4) Reducing the cost of installation through optimization of the products. (5) Increased value of electricity in mid-term to drive volume increases, via the green grid technology. (6) Large scale manufacture of PV products in the US, generating increased US employment in manufacturing and installation. To achieve these goals BP Solar assembled a team that included suppliers of critical materials, automated equipment developers/manufacturers, inverter and other BOS manufacturers, a utility company, and University research groups. The program addressed all aspects of the crystalline silicon PV business from raw materials (particularly silicon feedstock) through installation of the system on the customers site. By involving the material and equipment vendors, we ensured that supplies of silicon feedstock and other PV specific materials like encapsulation materials (EVA and cover glass) will be available in the quantities required to meet the DOE goals of 5 to 10 GW of installed US PV by 2015 and at the prices necessary for PV systems to reach grid parity in 2015. This final technical report highlights the accomplishments of the BP Solar technical team from 2006 to the end of the project in February 2010. All the main contributors and team members are recognized for this accomplishment and their endeavors are recorded in the twelve main tasks described here.

Cunningham, Daniel W; Wohlgemuth, John; Carlson, David E; Clark, Roger F; Gleaton, Mark; Posbic, John P; Zahler, James

2010-12-06T23:59:59.000Z

193

Development of manufacturing capability for high-concentration, high-efficiency silicon solar cells  

SciTech Connect (OSTI)

This report presents a summary of the major results from a program to develop a manufacturable, high-efficiency silicon concentrator solar cell and a cost-effective manufacturing facility. The program was jointly funded by the Electric Power Research Institute, Sandia National Laboratories through the Concentrator Initiative, and SunPower Corporation. The key achievements of the program include the demonstration of 26%-efficient silicon concentrator solar cells with design-point (20 W/cm{sup 2}) efficiencies over 25%. High-performance front-surface passivations; that were developed to achieve this result were verified to be absolutely stable against degradation by 475 days of field exposure at twice the design concentration. SunPower demonstrated pilot production of more than 1500 of these cells. This cell technology was also applied to pilot production to supply 7000 17.7-cm{sup 2} one-sun cells (3500 yielded wafers) that demonstrated exceptional quality control. The average efficiency of 21.3% for these cells approaches the peak efficiency ever demonstrated for a single small laboratory cell within 2% (absolute). Extensive cost models were developed through this program and calibrated by the pilot-production project. The production levels achieved indicate that SunPower could produce 7-10 MW of concentrator cells per year in the current facility based upon the cell performance demonstrated during the program.

Sinton, R.A.; Verlinden, P.J.; Crane, R.A.; Swanson, R.N. [SunPower Corp., Sunnyvale, CA (United States)

1996-10-01T23:59:59.000Z

194

Comparison of spatially resolved carrier lifetimes in mc-Si with solar cell and material characteristics  

SciTech Connect (OSTI)

The authors introduce a novel application of modulated free carrier absorption (MFCA) for measuring minority carrier lifetimes in multicrystalline silicon with high spatial resolution. The improved lateral resolution compared to other contactless techniques allows the correlation between these lifetime maps and solar cell characteristics as well as microscopic properties, like dislocations, precipitates, oxygen concentration, etc. Comparisons of the lifetime maps measured on the starting material and light beam induced current (LBIC) maps exhibit a very good qualitative correlation of the structures observed in both cases. In addition, correlations to microscopic characteristics like high dislocation density in regions with low lifetimes are investigated and a comparison with spatially resolved FT-IR measurements of the interstitial oxygen concentration is performed.

Glunz, S.W.; Hebling, C.; Warta, W.; Wettling, W. [Fraunhofer-Inst. fuer Solare Energiesysteme, Freiburg (Germany)

1994-12-31T23:59:59.000Z

195

Inks for Ink Jet Printed Contacts for High Performance Silicon Solar Cells: Cooperative Research and Development Final Report, CRADA No. CRD-06-199  

SciTech Connect (OSTI)

The work under the proposed CRADA will be a joint effort by BP Solar and NREL to develop new types of high performance inks for high quality contacts to silicon solar cells. NREL will develop inks that have electronic properties that will allow the formation of high quality ohmic contacts to n- and p-type crystalline silicon, and BP Solar will evaluate these contacts in test contact structures.

Ginley, D.

2013-01-01T23:59:59.000Z

196

Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells  

E-Print Network [OSTI]

-i-n solar cells Chang Hyun Lee and Koeng Su Lim Department of Electrical Engineering, Korea Advanced this film, amorphous silicon (a-Si solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were as window materials for amorphous silicon (a-Si based solar cells.1­4 In using such films as a p layer

Kim, Yong Jung

197

Exciton harvesting, charge transfer, and charge-carrier transport in amorphous-silicon nanopillar/polymer hybrid solar cells  

E-Print Network [OSTI]

report on the device physics of nanostructured amorphous-silicon a-Si:H /polymer hybrid solar cells and nanostructured a-Si:H/polymer systems. We find that strong energy transfer occurs in the a-Si:H/MEH-PPV system. However, inefficient hole transfer from the a-Si:H to the polymers renders negligible photocurrent

McGehee, Michael

198

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR CELLS  

E-Print Network [OSTI]

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al of aluminum ox- ide (Al2O3) grown by atomic layer deposition (ALD) pro- vide an excellent level of sur

199

Optimization of the optical properties of nanostructured silicon surfaces for solar cell applications  

SciTech Connect (OSTI)

Surface nanostructuration is an important challenge for the optimization of light trapping in solar cell. We present simulations on both the optical properties and the efficiency of micro pillars—MPs—or nanocones—NCs—silicon based solar cells together with measurements on their associated optical absorption. We address the simulation using the Finite Difference Time Domain method, well-adapted to deal with a periodic set of nanostructures. We study the effect of the period, the bottom diameter, the top diameter, and the height of the MPs or NCs on the efficiency, assuming that one absorbed photon induces one exciton. This allows us to give a kind of abacus involving all the geometrical parameters of the nanostructured surface with regard to the efficiency of the associated solar cell. We also show that for a given ratio of the diameter over the period, the best efficiency is obtained for small diameters. For small lengths, MPs are extended to NCs by changing the angle between the bottom surface and the vertical face of the MPs. The best efficiency is obtained for an angle of the order of 70°. Finally, nanostructures have been processed and allow comparing experimental results with simulations. In every case, a good agreement is found.

Zhou, Di; Pennec, Y.; Djafari-Rouhani, B.; Lambert, Y.; Deblock, Y.; Stiévenard, D., E-mail: didier.stievenard@isen.fr [Institut d'Electronique et de Microélectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe de Physique, Cité scientifique, avenue Poincaré, 59652 Villeneuve d'Ascq (France); Cristini-Robbe, O. [PHLAM, UMR8523, Université de Lille 1, 59652 Villeneuve d'Asq Cedex (France); Xu, T. [Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Faucher, M. [Institut d'Electronique et de Microélectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe NAM6, Cité scientifique, avenue Poincaré, 59652 Villeneuve d'Asq (France)

2014-04-07T23:59:59.000Z

200

Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration  

E-Print Network [OSTI]

are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon mc-Si . Metal silicide precipitate decoration is observed to increase the local metal silicide precipitate concentrations at various types of grain boundaries, identifying clear

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209  

SciTech Connect (OSTI)

NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

Sopori, B.

2013-03-01T23:59:59.000Z

202

Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers  

SciTech Connect (OSTI)

The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

NONE

1998-08-01T23:59:59.000Z

203

High-performance hybrid organic-inorganic solar cell based on planar n-type silicon  

SciTech Connect (OSTI)

Hybrid organic-inorganic solar cells were fabricated by spin coating the hole transporting conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film on n-type crystalline silicon (n-Si). By incorporating different additives into the PEDOT:PSS, the conductivity and wettability of PEDOT:PSS film are markedly improved, and the device performance is greatly enhanced accordingly. To further optimize the device performance, poly(3-hexylthiophene) (P3HT) layer was inserted between the n-Si and PEDOT:PSS layer. The P3HT layer blocks electrons from diffusing to the PEDOT:PSS, and hence reduces recombination at the anode side. The device eventually exhibits a high power conversion efficiency of 11.52%.

Chi, Dan [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qi, Boyuan; Wang, Jizheng [Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qu, Shengchun, E-mail: qsc@semi.ac.cn; Wang, Zhanguo [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-05-12T23:59:59.000Z

204

Micrometer-Thin Crystalline-Silicon Solar Cells Integrating Numerically Optimized 2-D Photonic Crystals  

E-Print Network [OSTI]

A 2-D photonic crystal was integrated experimentally into a thin-film crystalline-silicon solar cell of 1-{\\mu}m thickness, after numerical optimization maximizing light absorption in the active material. The photonic crystal boosted the short-circuit current of the cell, but it also damaged its open-circuit voltage and fill factor, which led to an overall decrease in performances. Comparisons between modeled and actual optical behaviors of the cell, and between ideal and actual morphologies, show the global robustness of the nanostructure to experimental deviations, but its particular sensitivity to the conformality of the top coatings and the spread in pattern dimensions, which should not be neglected in the optical model. As for the electrical behavior, the measured internal quantum efficiency shows the strong parasitic absorptions from the transparent conductive oxide and from the back-reflector, as well as the negative impact of the nanopattern on surface passivation. Our exemplifying case, thus, illustr...

Depauw, V; Daif, O El; Gomard, G; Lalouat, L; Drouard, E; Trompoukis, C; Fave, A; Seassal, C; Gordon, I

2013-01-01T23:59:59.000Z

205

Solar-to-Hydrogen Photovoltaic/Photoelectrochemical Devices Using Amorphous Silicon Carbide as the Photoelectrode  

SciTech Connect (OSTI)

We report the use of hydrogenated amorphous silicon carbide (a-SiC:H) prepared by plasma enhanced chemical vapor deposition (PECVD) as the photoelectrode in an integrated 'hybrid' photoelectrochemical (PEC) cell to produce hydrogen directly from water using sunlight. Results on the durability of hydrogenated amorphous silicon carbide (a-SiC:H) photoelectrodes in an electrolyte are presented. In a pH2 electrolyte, the a-SiC:H photoelectrode exhibits excellent stability for 100 hour test so far performed. A photocurrent onset shift (anodically) after a 24- or 100-hour durability test in electrolyte is observed, likely due to changes in the surface chemical structure of the a-SiC:H photoelectrode. It is also observed that a thin SiOx layer native to the air exposed surface of the a-SiC:H affects the photocurrent and the its onset shift. Finally, approaches for eliminating the external bias voltage and enhancing the solar-to-hydrogen efficiency in a PV/PEC hybrid structure to achieve {>=} 10% are presented.

Hu, J.; Zhu, F.; Matulionis, I.; Kunrath, A.; Deutsch, T.; Kuritzky, L.; Miller, E.; Madan, A.

2008-01-01T23:59:59.000Z

206

Tenth Workshop on Crystalline Silicon Solar Cell Materials and Processes: A Summary of Discussion Sessions  

SciTech Connect (OSTI)

The 10th Workshop on Silicon Solar Cell Materials and Processes was held in Copper Mountain, Colorado, on August 13-16, 2000. The workshop was attended by 85 scientists and engineers from 15 international photovoltaic (PV) companies and 24 research institutions. Review and poster presentations were augmented by discussion sessions to address the recent progress and critical issues in meeting the goals for Si in the PV Industry Roadmap. The theme of the workshop was Si Photovoltaics: 10 Years of Progress and Opportunities for the Future. Two special sessions were held: Advanced Metallization and Interconnections - covering recent advances in solar cell metallization, printed contacts and interconnections, and addressing new metallization schemes for low-cost cell interconnections; and Characterization Methods - addressing the growing need for process monitoring techniques in the PV industry. The following major issues emerged from the discussion sessions: (1) Mechanical breakage in the P V industry involves a large fraction, about 5%-10%, of the wafers. (2) The current use of Al screen-printed back-contacts appears to be incompatible with the PV Industry Roadmap requirements. (3) The PV manufacturers who use hydrogen passivation should incorporate the plasma-enhanced chemical vapor deposited (PECVD) nitride for antireflection coating and hydrogenation. (4) There is an imminent need to dissolve metallic precipitates to minimize the electrical shunt problem caused by the ''bad'' regions in wafers. (5) Industry needs equipment for automated, in-line monitoring and testing. There are simply not many tools available to industry. (6) In the Wrap-Up Session of the workshop, there was consensus to create four industry/university teams that would address critical research topics in crystalline silicon. (7) The workshop attendees unanimously agreed that the workshop has served well the PV community by promoting the fundamental understanding of industrial processes, forecasting critical issues and research areas, and promoting a climate of openness to facilitate growth of the industry.

Tan, T.; Swanson, D.; Sinton, R.; Sopori, B.

2001-01-22T23:59:59.000Z

207

Quality Characterization of Silicon Bricks using Photoluminescence Imaging and Photoconductive Decay: Preprint  

SciTech Connect (OSTI)

Imaging techniques can be applied to multicrystalline silicon solar cells throughout the production process, which includes as early as when the bricks are cut from the cast ingot. Photoluminescence (PL) imaging of the band-to-band radiative recombination is used to characterize silicon quality and defects regions within the brick. PL images of the brick surfaces are compared to minority-carrier lifetimes measured by resonant-coupled photoconductive decay (RCPCD). Photoluminescence images on silicon bricks can be correlated to lifetime measured by photoconductive decay and could be used for high-resolution characterization of material before wafers are cut. The RCPCD technique has shown the longest lifetimes of any of the lifetime measurement techniques we have applied to the bricks. RCPCD benefits from the low-frequency and long-excitation wavelengths used. In addition, RCPCD is a transient technique that directly monitors the decay rate of photoconductivity and does not rely on models or calculations for lifetime. The measured lifetimes over brick surfaces have shown strong correlations to the PL image intensities; therefore, this correlation could then be used to transform the PL image into a high-resolution lifetime map.

Johnston, S.; Yan, F.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Ounadjela, K.

2012-06-01T23:59:59.000Z

208

12th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Summary Discussion Sessions  

SciTech Connect (OSTI)

This report is a summary of the discussion sessions of the 12th Workshop on Crystalline Silicon Solar Cells and Processes. The theme of the workshop was"Fundamental R&D in c-Si: Enabling Progress in Solar-Electric Technology." This theme was chosen to reflect a concern that the current expansion in the PV energy production may redirect basic research efforts to production-oriented issues. The PV industry is installing added production capacity and new production lines that include the latest technologies. Once the technologies are selected, it is difficult to make changes. Consequently, a large expansion can stagnate the technologies and diminish interest in fundamental research. To prevent the fundamental R&D program from being overwhelmed by the desire to address immediate engineering issues, there is a need to establish topics of fundamental nature that can be pursued by the universities and the research institutions. Hence, one of the objectives of the workshop was to identify such areas for fundamental research.

Sopori, B.; Swanson, D.; Sinton, R.; Tan, T.

2003-02-01T23:59:59.000Z

209

Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base  

SciTech Connect (OSTI)

The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

1980-01-01T23:59:59.000Z

210

Spatially resolved determination of the short-circuit current density of silicon solar cells via lock-in thermography  

SciTech Connect (OSTI)

We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, D-79110 Freiburg (Germany)

2014-05-19T23:59:59.000Z

211

15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

Sopori, B. L.

2005-11-01T23:59:59.000Z

212

Well-Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

We have developed hydrogenated amorphous silicon (a Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250 C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p type textured silicon wafers.

Page, M. R.; Iwaniczko, E.; Xu, Y.; Wang, Q.; Yan, Y.; Roybal, L.; Branz, H. M.; Wang, T. H.

2006-05-01T23:59:59.000Z

213

Broadband antireflection and absorption enhancement of ultrathin silicon solar microcells enabled with density-graded surface nanostructures  

SciTech Connect (OSTI)

Density-graded surface nanostructures are implemented on ultrathin silicon solar microcells by silver-nanoparticle-catalyzed wet chemical etching to enable near-zero surface reflection over a broad wavelength range of incident solar spectrum as well as non-zeroth order diffraction and light trapping for longer wavelength photons, thereby achieving augmented photon absorption for ultrathin silicon microcells in a simple, cost-effective manner. The increase of absorbed photon flux through the “black silicon (b-Si)” surface translates directly into the corresponding enhancement of photovoltaic performance, where 5.7-?m b-Si microcells with the rational design of device configuration exhibit improved energy conversion efficiency by 148% and 50% with and without a diffuse backside reflector, respectively, compared to devices from the bare silicon without b-Si implementation. Systematic studies on nanostructured morphology, optical and electrical properties of b-Si microcells, together with semi-empirical numerical modeling of photon absorption, provide key aspects of underlying materials science and physics.

Chan, Lesley; Kang, Dongseok; Lee, Sung-Min; Li, Weigu; Hunter, Hajirah [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States); Yoon, Jongseung, E-mail: js.yoon@usc.edu [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States); Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States)

2014-06-02T23:59:59.000Z

214

Development of Thin Film Silicon Solar Cell Using Inkjet Printed Silicon and Other Inkjet Processes: Cooperative Research and Development Final Report, CRADA Number CRD-07-260  

SciTech Connect (OSTI)

The cost of silicon photovoltaics (Si-PV) can be greatly lowered by developing thin-film crystalline Si solar cells on glass or an equally lower cost substrate. Typically, Si film is deposited by thermal evaporation, plasma enhanced chemical vapor deposition, and sputtering. NREL and Silexos have worked under a CRADA to develop technology to make very low cost solar cells using liquid organic precursors. Typically, cyclopentasilane (CPS) is deposited on a glass substrate and then converted into an a-Si film by UV polymerization followed by low-temperature optical process that crystallizes the amorphous layer. This technique promises to be a very low cost approach for making a Si film.

Sopori, B.

2012-04-01T23:59:59.000Z

215

European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2.4 HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SILICON SOLAR CELLS WITH CELL  

E-Print Network [OSTI]

27th European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2 cost of energy in photovoltaics can be achieved by increasing the conversion efficiency as well into the surface of a thick silicon wafer. After sintering at 1100 °C in hydrogen atmosphere silicon is grown

216

Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations  

SciTech Connect (OSTI)

Thin-film solar cells based on silicon have emerged as an alternative to standard thick wafers technology, but they are less efficient, because of incomplete absorption of sunlight, and non-radiative recombinations. In this paper, we focus on the case of crystalline silicon (c-Si) devices, and we present a full analytic electro-optical model for p-n junction solar cells with Lambertian light trapping. This model is validated against numerical solutions of the drift-diffusion equations. We use this model to investigate the interplay between light trapping, and bulk and surface recombination. Special attention is paid to surface recombination processes, which become more important in thinner devices. These effects are further amplified due to the textures required for light trapping, which lead to increased surface area. We show that c-Si solar cells with thickness of a few microns can overcome 20% efficiency and outperform bulk ones when light trapping is implemented. The optimal device thickness in presence of light trapping, bulk and surface recombination, is quantified to be in the range of 10–80??m, depending on the bulk quality. These results hold, provided the effective surface recombination is kept below a critical level of the order of 100?cm/s. We discuss the possibility of meeting this requirement, in the context of state-of-the-art techniques for light trapping and surface passivation. We show that our predictions are within the capability of present day silicon technologies.

Bozzola, A., E-mail: angelo.bozzola@unipv.it; Kowalczewski, P.; Andreani, L. C. [Physics Department, University of Pavia and CNISM, via Bassi 6, I-27100 Pavia (Italy)

2014-03-07T23:59:59.000Z

217

Crystal Silicon Heterojunction Solar Cells by Hot-Wire CVD: Preprint  

SciTech Connect (OSTI)

Hot-wire chemical vapor deposition (HWCVD) is a promising technique for fabricating Silicon heterojunction (SHJ) solar cells. In this paper we describe our efforts to increase the open circuit voltage (Voc) while improving the efficiency of these devices. On p-type c-Si float-zone wafers, we used a double heterojunction structure with an amorphous n/i contact to the top surface and an i/p contact to the back surface to obtain an open circuit voltage (Voc) of 679 mV in a 0.9 cm2 cell with an independently confirmed efficiency of 19.1%. This is the best reported performance for a cell of this configuration. We also made progress on p-type CZ wafers and achieved 18.7% independently confirmed efficiency with little degradation under prolong illumination. Our best Voc for a p-type SHJ cell is 0.688 V, which is close to the 691 mV we achieved for SHJ cells on n type c-Si wafers.

Wang, Q.; Page, M. R.; Iwaniczko, E.; Xu, Y. Q.; Roybal, L.; Bauer, R.; To, B.; Yuan, H. C.; Duda, A.; Yan, Y. F.

2008-05-01T23:59:59.000Z

218

Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint  

SciTech Connect (OSTI)

We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

2012-06-01T23:59:59.000Z

219

Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013  

SciTech Connect (OSTI)

Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

Ravi, T. S.

2013-05-01T23:59:59.000Z

220

Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces  

DOE Patents [OSTI]

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2014-09-09T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

Sopori, B. L.

2006-08-01T23:59:59.000Z

222

Quantitative analysis of defects in silicon. Silicon sheet growth development for the Large Area Silicon Sheet Task of the Low-Cost Solar Array Project. Final report  

SciTech Connect (OSTI)

The complete procedures for the defect analysis of silicon samples using a QTM-720 Image Analyzing System are described, chemical polishing, etching, and QTM operation are discussed. The data from one hundred and seventy four (174) samples, and a discussion of the data are included. The data include twin boundary density, dislocation pit density, and grain boundary length. (WHK)

Natesh, R.; Smith, J.M.; Bruce, T.; Qidwai, H.A.

1980-04-01T23:59:59.000Z

223

Amorphous silicon/polyaniline heterojunction solar cells: Fermi levels and open-circuit voltages  

E-Print Network [OSTI]

these open-circuit voltages are lower than for the best a-Si:H cells utilizing nanocrystalline Si or a reports on conducting polymer/ amorphous silicon (a-Si:H) structures [1­4] and conduct- ing polymer/crystalline silicon (c-Si) structures [5,6]. In this paper, we report our research on polyaniline (PANI)/a-Si:H

Schiff, Eric A.

224

Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film  

SciTech Connect (OSTI)

We investigated the growth mechanism of amorphous silicon thin films by implementing hot-wire chemical vapor deposition and fabricated thin film solar cell devices. The fabricated cells showed efficiencies of 7.5 and 8.6% for the samples without and with the rear-reflector decomposed by sputtering, respectively. The rear-reflector enhances the quantum efficiency in the infrared spectral region from 550 to 750?nm. The more stable quantum efficiency of the sample with the inclusion of a rear-reflector than the sample without the rear-reflector due to the bias effect is related to the enhancement of the short circuit current.

Park, Seungil [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Yong Ji, Hyung; Jun Kim, Myeong; Hyeon Peck, Jong [Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Kim, Keunjoo, E-mail: kimk@chonbuk.ac.kr [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-02-17T23:59:59.000Z

225

18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

Sopori, B. L.

2008-09-01T23:59:59.000Z

226

See-through amorphous silicon solar cells with selectively transparent and conducting photonic crystal back reflectors for building integrated photovoltaics  

SciTech Connect (OSTI)

Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with selectively transparent and conducting photonic crystal (STCPC) back-reflectors are demonstrated. Short circuit current density of a 135?nm thick a-Si:H cell with a given STCPC back-reflector is enhanced by as much as 23% in comparison to a reference cell with an ITO film functioning as its rear contact. Concurrently, solar irradiance of 295?W/m{sup 2} and illuminance of 3480 lux are transmitted through the cell with a given STCPC back reflector under AM1.5 Global tilt illumination, indicating its utility as a source of space heating and lighting, respectively, in building integrated photovoltaic applications.

Yang, Yang [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada)] [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); O’Brien, Paul G. [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada) [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada); Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Ozin, Geoffrey A., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Kherani, Nazir P., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada)

2013-11-25T23:59:59.000Z

227

Evaluation of Solar Grade Silicon Produced by the Institute of Physics and Technology: Cooperative Research and Development Final Report, CRADA Number CRD-07-211  

SciTech Connect (OSTI)

NREL and Solar Power Industries will cooperate to evaluate technology for producing solar grade silicon from industrial waste of the phosphorus industry, as developed by the Institute of Physics and Technology (IPT), Kazakhstan. Evaluation will have a technical component to assess the material quality and a business component to assess the economics of the IPT process. The total amount of silicon produced by IPT is expected to be quite limited (50 kg), so evaluations will need to be done on relatively small quantities (? 5 kg/sample).

Page, M.

2013-02-01T23:59:59.000Z

228

17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating: Preprint  

SciTech Connect (OSTI)

In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon 'black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in 'black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

2011-07-01T23:59:59.000Z

229

AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION  

E-Print Network [OSTI]

-based polymers (silicones) may not show this effect. Although silicones were used to encapsulate solar cells improved, which may make them suitable for encapsulating solar cells once again. We have recentlyAMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION Aarohi Vijh 1

Deng, Xunming

230

amorphous silicon-based solar: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

networking issues away from the programmer via ... Beal, Jacob 58 A Silicon-Based Micro Gas Turbine Engine for Power Generation CERN Preprints Summary: This paper reports on our...

231

Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells  

E-Print Network [OSTI]

Reducing material use is a major driver for cost reduction of crystalline silicon photovoltaic modules. The dominant wafer fabrication process employed in the industry today, ingot casting & sawing, wastes approximately ...

Powell, Douglas M. (Douglas Michael)

2014-01-01T23:59:59.000Z

232

ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES  

SciTech Connect (OSTI)

Air Products set out to investigate the impact of additives on the deposition rate of both ���µCSi and ���±Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products�¢���� electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

Ridgeway, R.G.; Hegedus, S.S.; Podraza, N.J.

2012-08-31T23:59:59.000Z

233

New Approaches for Passivation of Crystalline and Amorphous Silicon: Cooperative Research and Development Final Report, CRADA Number CRD-09-351  

SciTech Connect (OSTI)

New approaches of passivating crystalline, multicrystalline, and amorphous silicon will be explored. These will include the use of aqueous solution of KCN and a proprietary composition formulated by Mallinckrodt Baker, Inc. The surface passivation will be compared with that provided by an iodine-ethanol solution, and bulk passivation will be compared with that of H-passivation obtained by silicon nitride, in a fire-through process.

Sopori, B.

2012-09-01T23:59:59.000Z

234

Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs...  

Broader source: Energy.gov (indexed) [DOE]

the advantages of scaled-up designs and more energy-efficient production, making solar energy a more affordable alternative," Ekern says. "Moreover, making step changes in...

235

Experimental Demonstration of Quasi-Resonant Absorption in Silicon Thin Films for Enhanced Solar Light Trapping  

E-Print Network [OSTI]

We experimentally demonstrate that the addition of partial lattice disorder to a thin-film micro-crystalline silicon photonic crystal results in the controlled spectral broadening of its absorption peaks to form quasi resonances; increasing light trapping over a wide bandwidth while also reducing sensitivity to the angle of incident radiation. Accurate computational simulations are used to design the active-layer photonic crystal so as to maximize the number of its absorption resonances over the broadband interval where micro-crystalline silicon is weakly absorbing before lattice disorder augmented with fabrication-induced imperfections are applied to further boost performance. Such a design strategy may find practical use for increasing the efficiency of thin-film silicon photovoltaics.

Oskooi, Ardavan; Ishizaki, Kenji; Noda, Susumu

2013-01-01T23:59:59.000Z

236

Amorphous silicon solar cells. Quarterly report No. 1, 1 October 1980-31 December 1980  

SciTech Connect (OSTI)

Progress is reported on the following: theoretical modeling, deposition and doping studies, experimental methods for the characterization of a-Si:H, formation of solar-cell structures, theoretical and experimental evaluation of solar-cell parameters, and stability studies. (MHR)

Carlson, D.E.; Balberg, I.; Crandall, R.S.; Dresner, J.; Goldstein, B.; Hanak, J.J.; Schade, H.E.; Staebler, D.L.; Weakliem, H.A.

1981-02-01T23:59:59.000Z

237

Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.  

DOE Patents [OSTI]

Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

Yang, Liyou (Plainsboro, NJ); Chen, Liangfan (Langhorne, PA)

1998-03-24T23:59:59.000Z

238

Back-side hydrogenation technique for defect passivation in silicon solar cells  

DOE Patents [OSTI]

A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.

Sopori, Bhushan L. (Denver, CO)

1994-01-01T23:59:59.000Z

239

Back-side hydrogenation technique for defect passivation in silicon solar cells  

DOE Patents [OSTI]

A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts. 3 figures.

Sopori, B.L.

1994-04-19T23:59:59.000Z

240

Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, April 1, 1994--March 31, 1995  

SciTech Connect (OSTI)

Transparent and reflecting electrodes are important parts of the structure of amorphous silicon solar cells. We report improved methods for depositing zinc oxide, deposition of tin nitride as a potential reflection-enhancing diffusion barrier between the a-Si and back metal electrodes. Highly conductive and transparent fluorine-doped zinc oxide was successfully produced on small areas by atmospheric pressure CVD from a less hazardous zinc precursor, zinc acetylacetonate. The optical properties measured for tin nitride showed that the back-reflection would be decreased if tin nitride were used instead of zinc oxide as a barrier layer over silver on aluminum. Niobium-doped titanium dioxide was produced with high enough electrical conductivity so that normal voltages and fill factors were obtained for a-Si cells made on it.

Gordon, R.G. [Harvard Univ., Cambridge, MA (United States)

1995-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Influence of the pattern shape on the photonic efficiency of front-side periodically patterned ultrathin crystalline silicon solar cells  

E-Print Network [OSTI]

Patterning the front side of an ultra-thin crystalline silicon (c Si) solar cell helps keeping the energy conversion efficiency high by compensating for the light absorption losses. A super-Gaussian mathematical expression was used in order to encompass a large variety of nanopattern shapes and to study their influence on the photonic performance. We prove that the enhancement in the maximum achievable photo-current is due to both impedance matching condition at short wavelengths and to the wave nature of light at longer wavelengths. We show that the optimal mathematical shape and parameters of the pattern depend on the c Si thickness. An optimal shape comes with a broad optimal parameter zone where fabricating errors would have much less influence on the efficiency. We prove that cylinders are not the best suited shape. To compare our model with a real slab, we fabricated a nanopatterned c Si slab via Nano Imprint Lithography.

Herman, Aline; Depauw, Valerie; Daif, Ounsi El; Deparis, Olivier

2012-01-01T23:59:59.000Z

242

Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E. Bouree (1), V. Perraki (*) (1), G. Revel (2),R. Kishore (2) (**), J. L. Pastol (2), R. Mertens (3), M. Caymax (3) and M. Eyckmans  

E-Print Network [OSTI]

687 Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E avec les autres aptes à l'utilisation de Si-UMG bon marché. Abstract. 2014 Epitaxial solar cells have and electron diffusion length adequate to produce good solar cells. 10.3 % efficiency cells have been obtained

Paris-Sud XI, Université de

243

Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles  

SciTech Connect (OSTI)

We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

Liu, X.; Zhang, X. W., E-mail: xwzhang@semi.ac.cn; Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L. [Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083 (China)

2014-11-03T23:59:59.000Z

244

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network [OSTI]

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

245

Experimental optimization of an anisotropic etching process for random texturization of silicon solar cells  

SciTech Connect (OSTI)

A multifactor experimental investigation of silicon surface texturing was conducted in Sandia's Photovoltaic Device Fabrication Laboratory using aqueous potassium-hydroxide (KOH) solutions with isopropyl alcohol (IPA) added as a complexing agent. Czochralski, magnetic-Czochralski, and float-zone silicon wafers of different resistivities with both polished and lapped surfaces were included in the experiment. Process variables considered were solution temperature, time in solution, degree of mechanical mixing, KOH concentration, and IPA concentration. Using hemispherical reflectance as the primary gauge of success, process variables were identified that resulted in an effective surface texture with reflectance less than 12% prior to anti-reflection coating. Of particular interest was a low temperature (70 {degrees}C) process with less than 2% concentration of both KOH and IPA and wide process variable tolerances. 6 refs., 6 figs., 1 tab.

King, D.L.; Buck, M.E.

1991-01-01T23:59:59.000Z

246

Efficient Crystalline Si Solar Cell with Amorphous/Crystalline Silicon Heterojunction as Back Contact: Preprint  

SciTech Connect (OSTI)

We study an amorphous/crystalline silicon heterojunction (Si HJ) as a back contact in industrial standard p-type five-inch pseudo-square wafer to replace Al back surface field (BSF) contact. The best efficiency in this study is over 17% with open-circuit (Voc) of 0.623 V, which is very similar to the control cell with Al BSF. We found that Voc has not been improved with the heterojunction structure in the back. The typical minority carrier lifetime of these wafers is on the order of 10 us. We also found that the doping levels of p-layer affect the FF due to conductivity and band gap shifting, and an optimized layer is identified. We conclude that an amorphous/crystalline silicon heterojunction can be a very promising structure to replace Al BSF back contact.

Nemeth, B.; Wang, Q.; Shan, W.

2012-06-01T23:59:59.000Z

247

Thermal Management of Solar Cells  

E-Print Network [OSTI]

Nanostructured Silicon- Based Solar Cells, 2013. X. C. Tong,heat exchangers, and solar cells," Sci-Tech News, vol. 65,in crystalline silicon solar cells," Renewable Energy, vol.

Saadah, Mohammed Ahmed

2013-01-01T23:59:59.000Z

248

Local measurements of diffusion length and chemical character of metal clusters in multicrystalline silicon  

E-Print Network [OSTI]

-ray Microprobe Techniques X-ray Fluorescence Microscopy ( -XRF). Synchrotron-based X-ray fluorescence microscopy ( -XRF), also known as "Scanning -XRF" ( -SXRF), is used to detect and characterize the elemental compositions, sizes, and depths of metal-rich clusters. µ-XRF is similar to energy dispersive X

249

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon  

E-Print Network [OSTI]

Newman, and M. I. Bertoni for ? -XRF and laboratory support.uorescence microscopy ? ? -XRF? at Beamline 2-ID-D ?Refs. 57These GBs were analyzed by ? -XRF at APS Beamline 2-ID-D

Ganapati, Vidya

2012-01-01T23:59:59.000Z

250

The correlation of open-circuit voltage with bandgap in amorphous silicon-based {ital pin} solar cells  

SciTech Connect (OSTI)

We briefly review the correlation of open-circuit voltages {ital V}{sub OC} with the bandgap of the intrinsic layer in amorphous silicon based {ital pin} solar cells. We discuss two mechanisms which limit {ital V}{sub OC}: intrinsic layer recombination, and the built-in potential {ital V}{sub BI}. In particular we discuss Li{close_quote}s proposal that the open-circuit voltages in higher bandgap cells ({ital E}{sub G}{gt}1.9 eV) are {ital V}{sub BI}-limited. Based on computer simulations of {ital pin} solar cells we propose that {ital V}{sub BI} limitation occurs when the recombination limit to {ital V}{sub OC} exceeds the cell{close_quote}s field-reversal voltage {ital V}{sub R}. For {ital a}-Si:H based cells this field-reversal voltage occurs at about {ital V}{sub BI}-0.3 V. This proposal would account for the observation that {ital V}{sub BI} limitation occurs for {ital V}{sub OC} significantly smaller than {ital V}{sub BI}. {copyright} {ital 1996 American Institute of Physics.}

Crandall, R.S. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Schiff, E.A. [Department of Physics, Syracuse University, Syracuse, New York 13244-1130 (United States)

1996-01-01T23:59:59.000Z

251

Excellent Passivation and Low Reflectivity Al2O3/TiO2 Bilayer Coatings for n-Wafer Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes {approx}1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.

Lee, B. G.; Skarp, J.; Malinen, V.; Li, S.; Choi, S.; Branz, H. M.

2012-06-01T23:59:59.000Z

252

Fabrication of contacts for silicon solar cells including printing burn through layers  

DOE Patents [OSTI]

A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

2014-06-24T23:59:59.000Z

253

Beyond Silicon: Cutting the Costs of Solar Power | U.S. DOE Office of Science (SC)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth (AOD)ProductssondeadjustsondeadjustAboutScienceCareers Apply for a JobBernardtheBeyond Silicon: Cutting the

254

European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2AO.2.3 EFFECT OF SiN DEPOSITION TEMPERATURE ON SURFACE PASSIVATION OF N-TYPE CZ SILICON  

E-Print Network [OSTI]

25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2AO.2N deposition leads to increasing the hydrogen content of the SiN layers. This improves the supply of hydrogen silicon using thermally grown oxide or amorphous films based on hydrogenated silicon compounds has been

255

Simulation of Large-Area Silicon Solar Cells1 Gernot Heiser2  

E-Print Network [OSTI]

from the Australian Research Council (ARC). The Centre for Photovoltaic Devices and Systems, fax: +61 2 385 5995, e-mail: G.Heiser@unsw.edu.au 3 Centre for Photovoltaic Devices and Systems, tel to produce an accurate model of a full-sized high-efficiency solar cell. We demon- strate the power

New South Wales, University of

256

DOE Solar Energy Technologies Program TPP Final Report - A Value Chain Partnership to Accelerate U.S. PV Industry Growth, GE Global Research  

SciTech Connect (OSTI)

General Electric’s (GE) DOE Solar Energy Technologies TPP program encompassesd development in critical areas of the photovoltaic value chain that affected the LCOE for systems in the U.S. This was a complete view across the value chain, from materials to rooftops, to identify opportunities for cost reductions in order to realize the Department of Energy’s cost targets for 2010 and 2015. GE identified a number of strategic partners with proven leadership in their respective technology areas to accelerate along the path to commercialization. GE targeted both residential and commercial rooftop scale systems. To achieve these goals, General Electric and its partners investigated three photovoltaic pathways that included bifacial high-efficiency silicon cells and modules, low-cost multicrystalline silicon cells and modules and flexible thin film modules. In addition to these technologies, the balance of system for residential and commercial installations were also investigated. Innovative system installation strategies were pursed as an additional avenue for cost reduction.

Todd Tolliver; Danielle Merfeld; Charles Korman; James Rand; Tom McNulty; Neil Johnson; Dennis Coyle

2009-07-31T23:59:59.000Z

257

Development of low cost contacts to silicon solar cells. Final report, 15 October 1978-30 April 1980  

SciTech Connect (OSTI)

A summary of work done on the development of a copper based contact system for silicon solar cells is presented. The work has proceeded in three phases: (1) Development of a copper based contact system using plated Pd-Cr-Cu. Good cells were made but cells degraded under low temperature (300/sup 0/C) heat treatments. (2) The degradation in Phase I was identified as copper migration into the cells junction region. A paper study was conducted to find a proper barrier to the copper migration problem. Nickel was identified as the best candidate barrier and this was verified in a heat treatment study using evaporated metal layers. (3) An electroless nickel solution was substituted for the electroless chrominum solution in the original process. Efforts were made to replace the palladium bath with an appropriate nickel layer, but these were unsuccessful. 150 cells using the Pd-Ni-Cu contact system were delivered to JPL. Also a cost study was made on the plating process to assess the chance of reaching 5 cents/watt.

Tanner, D.P.; Iles, P.A.

1980-01-01T23:59:59.000Z

258

Bioinspired Molecular Co-Catalysts Bonded to a Silicon Photocathode for Solar Hydrogen Evolution  

SciTech Connect (OSTI)

The production of fuels from sunlight represents one of the main challenges in the development of a sustainable energy system. Hydrogen is the simplest fuel to produce and although platinum and other noble metals are efficient catalysts for photoelectrochemical hydrogen evolution earth-abundant alternatives are needed for large-scale use. We show that bioinspired molecular clusters based on molybdenum and sulphur evolve hydrogen at rates comparable to that of platinum. The incomplete cubane-like clusters (Mo{sub 3}S{sub 4}) efficiently catalyse the evolution of hydrogen when coupled to a p-type Si semiconductor that harvests red photons in the solar spectrum. The current densities at the reversible potential match the requirement of a photoelectrochemical hydrogen production system with a solar-to-hydrogen efficiency in excess of 10% (ref. 16). The experimental observations are supported by density functional theory calculations of the Mo{sub 3}S{sub 4} clusters adsorbed on the hydrogen-terminated Si(100) surface, providing insights into the nature of the active site.

Hou, Yidong

2011-11-08T23:59:59.000Z

259

Angular behavior of the absorption limit in thin film silicon solar cells  

E-Print Network [OSTI]

We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

Naqavi, Ali; Söderström, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

2013-01-01T23:59:59.000Z

260

Array automated assembly task low cost silicon solar array project. Phase 2. Final report  

SciTech Connect (OSTI)

The initial contract was a Phase II Process Development for a process sequence, but with concentration on two particular process steps: laserscribing and spray-on junction formation. The add-on portion of the contract was to further develop these tasks, to incorporate spray-on of AR Coating and aluminum and to study the application of microwave energy to solar cell fabrication. The overall process cost projection is 97.918 cents/Wp. The major contributor to this excess cost is the module encapsulation materials cost. During the span of this contract the study of microwave application to solar cell fabrication produced the ability to apply this technique to any requirement of 600/sup 0/C or less. Above this temperature, non-uniformity caused the processing to be unreliable. The process sequence is described in detail, and a SAMICS cost analysis for each valid process step studied is presented. A temporary catalog for expense items is included, and engineering specifications for the process steps are given. (WHK)

Olson, Clayton

1980-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation  

E-Print Network [OSTI]

We study polarization independent improved light trapping in commercial thin film hydrogenated amorphous silicon (a-Si:H) solar photovoltaic cells using a three-dimensional silver array of multi-resonant nano-disk structures embedded in a silicon nitride anti-reflection coating (ARC) to enhance optical absorption in the intrinsic layer (i-a-Si:H) for the visible spectrum for any polarization angle. Predicted total optical enhancement (OE) in absorption in the i-a-Si:H for AM-1.5 solar spectrum is 18.51% as compared to the reference, and producing a 19.65% improvement in short-circuit current density (JSC) over 11.7 mA/cm2 for a reference cell. The JSC in the nano-disk patterned solar cell (NDPSC) was found to be higher than the commercial reference structure for any incident angle. The NDPSC has a multi-resonant optical response for the visible spectrum and the associated mechanism for OE in i-a-Si:H layer is excitation of Fabry-Perot resonance facilitated by surface plasmon resonances. The detrimental Staebl...

Vora, Ankit; Pearce, Joshua M; Bergstrom, Paul L; Güney, Durdu Ö

2014-01-01T23:59:59.000Z

262

2008 Solar Technologies Market Report  

E-Print Network [OSTI]

transportation costs. China's CSG Solar Glass Co. built theSolar Suntech Power, a Chinese crystalline silicon company with production in China,

Price, S.

2010-01-01T23:59:59.000Z

263

Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint  

SciTech Connect (OSTI)

Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

Goodrich, A.; Woodhouse, M.; Hacke, P.

2012-06-01T23:59:59.000Z

264

PHYSICAL REVIEW B 90, 115209 (2014) Computational search for direct band gap silicon crystals  

E-Print Network [OSTI]

abundance, silicon is the preferred solar-cell material despite the fact that current silicon materials have semiconductor. For this reason, the most widely used solar-cell materials are all silicon based [1]. Current

Lee, Jooyoung

265

Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration  

SciTech Connect (OSTI)

Synchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon (mc-Si). Metal silicide precipitate decoration is observed to increase with decreasing atomic coincidence within the grain boundary plane (increasing {sigma} values). A few low-{sigma} boundaries contain anomalously high metal precipitate concentrations, concomitant with heavy dislocation decoration. These results provide direct experimental evidence that the degree of interaction between metals and structural defects in mc-Si can vary as a function of microstructure, with implications for mc-Si device performance and processing.

Buonassisi, T.; Istratov, A. A.; Pickett, M. D.; Marcus, M. A.; Ciszek, T. F.; Weber, E. R. [Department of Materials Science and Engineering, University of California, Berkeley, California 94720 and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2006-07-24T23:59:59.000Z

266

assisted grown silicon: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

267

acid modified silicone: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

268

athermal silicon microring: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

269

Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices  

E-Print Network [OSTI]

hydrogen dilution in silane on light induced degradation of hydrogenated amor- phous silicon films for solar photovoltaichydrogen content from 14-22%[76]. Hydrogenated amorphous silicon has promise as a photovoltaic

Schriver, Maria Christine

2012-01-01T23:59:59.000Z

270

Nucleation and solidification of silicon for photovoltaics  

E-Print Network [OSTI]

The majority of solar cells produced today are made with crystalline silicon wafers, which are typically manufactured by growing a large piece of silicon and then sawing it into ~200 pm wafers, a process which converts ...

Appapillai, Anjuli T. (Anjuli Tara)

2010-01-01T23:59:59.000Z

271

Silicon heterojunction solar cell with passivated hole selective MoOx contact Corsin Battaglia,1,2  

E-Print Network [OSTI]

amorphous silicon layer (a-Si:H) as surface passivation layer.3,4 Carrier selectivity at the contacts is traditionally achieved by depos- iting a doped a-Si:H layer after passivation. With this approach record open coefficient combined with a high defect density, a-Si:H, even when only a few nanometers thin, leads to sig

Javey, Ali

272

System and method for liquid silicon containment  

DOE Patents [OSTI]

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2013-05-28T23:59:59.000Z

273

System and method for liquid silicon containment  

SciTech Connect (OSTI)

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2014-06-03T23:59:59.000Z

274

Simultaneous P and B diffusion, in-situ surface passivation, impurity filtering and gettering for high-efficiency silicon solar cells  

SciTech Connect (OSTI)

A technique is presented to simultaneously diffuse boron and phosphorus in silicon, and grow an in-situ passivating oxide in a single furnace step. It is shown that limited solid doping sources made from P and B Spin-On Dopant (SOD) films can produce optimal n{sup +} and p{sup +} profiles simultaneously without the deleterious effects of cross doping. A high quality passivating oxide is grown in-situ beneath the thin ({approximately} 60 {angstrom}) diffusion glass, resulting in low J{sub o} values below 100 fA/cm{sup 2} for transparent ({approximately} 100 {Omega}/{open_square}) phosphorus and boron diffusions. For the first time it is shown that impurities present in the boron SOD film can be effectively filtered out by employing separate source wafers, resulting in bulk lifetimes in excess of 1 ms for the sample wafers. The degree of lifetime degradation in the sources is related to the gettering efficiency of boron in silicon. This novel simultaneous diffusion, in-situ oxidation, impurity filtering and gettering technique was successfully used to produce 20.3% Fz, and 19.1% Cz solar cells, in one furnace step.

Krygowski, T.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States); Ruby, D. [Sandia National Labs., Albuquerque, NM (United States)

1997-11-01T23:59:59.000Z

275

Method for fabricating silicon cells  

DOE Patents [OSTI]

A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

1998-08-11T23:59:59.000Z

276

Method for fabricating silicon cells  

DOE Patents [OSTI]

A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

Ruby, D.S.; Basore, P.A.; Schubert, W.K.

1998-08-11T23:59:59.000Z

277

amorphous-nanocrystalline silicon thin: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high...

278

Antireflection and SiO2 Surface Passivation by Liquid-Phase Chemistry for Efficient Black Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

We report solar cells with both black Si antireflection and SiO2 surface passivation provided by inexpensive liquid-phase chemistry, rather than by conventional vacuum-based techniques. Preliminary cell efficiency has reached 16.4%. Nanoporous black Si antireflection on crystalline Si by aqueous etching promises low surface reflection for high photon utilization, together with lower manufacturing cost compared to vacuum-based antireflection coating. Ag-nanoparticle-assisted black Si etching and post-etching chemical treatment recently developed at NREL enables excellent control over the pore diameter and pore separation. Performance of black Si solar cells, including open-circuit voltage, short-circuit current density, and blue response, has benefited from these improvements. Prior to this study, our black Si solar cells were all passivated by thermal SiO2 produced in tube furnaces. Although this passivation is effective, it is not yet ideal for ultra-low-cost manufacturing. In this study, we report, for the first time, the integration of black Si with a proprietary liquid-phase deposition (LPD) passivation from Natcore Technology. The Natcore LPD forms a layer of <10-nm SiO2 on top of the black Si surface in a relatively mild chemical bath at room temperature. We demonstrate black Si solar cells with LPD SiO2 with a spectrum-weighted average reflection lower than 5%, similar to the more costly thermally grown SiO2 approach. However, LPD SiO2 provides somewhat better surface-passivation quality according to the lifetime analysis by the photo-conductivity decay measurement. Moreover, black Si solar cells with LPD SiO2 passivation exhibit higher spectral response at short wavelength compared to those passivated by thermally grown SiO2. With further optimization, the combination of aqueous black Si etching and LPD could provide a pathway for low-cost, high-efficiency crystalline Si solar cells.

Yuan, H. C.; Oh, J.; Zhang, Y.; Kuznetsov, O. A.; Flood, D. J.; Branz, H. M.

2012-06-01T23:59:59.000Z

279

The Influence of High-Energy Lithium Ion Irradiation on Electrical Characteristics of Silicon and GaAs Solar Cells  

E-Print Network [OSTI]

Space-grade Si and GaAs solar cells were irradiated with 15 & 40 MeV Li ions. Illuminated (AM0 condition) and unilluminated I-V curves reveal that the effect of high-energy Li ion irradiation has produced similar effects to that of proton irradiation. However, an additional, and different, defect mechanism is suggested to dominate in the heavier-ion results. Comparison is made with proton-irradiated solar-cell work and with non-ionizing energy-loss (NIEL) radiation-damage models.

B. Jayashree; Ramani; M. C. Radhakrishna; Anil Agrawal; Saif Ahmad Khan; A. Meulenberg

2006-10-22T23:59:59.000Z

280

KATHERINE N. ZAUNBRECHER (970)658-0569 kzaunbrecher@gmail.com  

E-Print Network [OSTI]

multicrystalline silicon defect types using photoluminescence, defect- band emissions, and lock-in thermography

Sites, James R.

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Preparation of silicon substrates for gallium-arsenide solar cells by electron-beam-pulse processing. Annual technical report, March 15, 1980-March 15, 1981  

SciTech Connect (OSTI)

In the past year a process has been developed for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency GaAs solar cells on low-cost silicon substrates in an economical manner. Thin (less than or equal to 1 ..mu..m) layers of Ge have been deposited on Si wafers by chemical vapor deposition (CVD) in single-crystal form or by vacuum evaporation in amorphous or polycrystalline form. The CVD films have given the best results, with good crystallinity and electrical properties as deposited. A persistent problem with surface roughness in the as-deposited films has been overcome by pulsed electron beam melting of the near-surface region in time periods on the order of a microsecond. The brief molten period smooths the surface features without compromising the crystallinity, electrical properties, or interfacial abruptness of the Ge film. These layers are of a quality suitable for further evaluation by GaAs growth and cell processing in the next phase of the program. Pulsed electron beam processing also serves a vital function for the evaporated Ge films, which are melted by the beam and recrystallized on the Si substrates, epitaxial single crystal Ge layers result from amorphous or polycrystalline starting films. To date results have not been as satisfactory as for CVD films; contamination from several sources has been identified as a problem. Many of these sources have been eliminated, so that a decision on the intrinsic limitations of the evaporated film approach should be made in the near future.

Tobin, S.P.

1981-05-01T23:59:59.000Z

282

Microstructured surface design for omnidirectional antireflection coatings on solar cells  

E-Print Network [OSTI]

to current crystalline silicon solar cells, as well as future thin film, quantum dot, and organic solar cells as the precise control of film thick- ness. In solar cell applications, a single layer thin film AR coating, e.g., silicon nitride SiNx thin film for silicon Si solar cells, is often used as a cost effective approach

Zhou, Weidong

283

EE580 Solar Cells Todd J. Kaiser  

E-Print Network [OSTI]

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 06 · Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies · A) Crystalline Silicon · B) Thin Film · C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

Kaiser, Todd J.

284

Phase 2 of the array automated assembly task for the Low Cost Silicon Solar Array Project. Seventh quarterly report  

SciTech Connect (OSTI)

Work during this quarter emphasized the evaluation of the Motorola metallization process, the major experimental task of the program. The Motorola process is a lengthy one, designed to assure reproducible metallization of solar cells, but it was found difficult to reproduce relative to a single step electroless nickel plating. It is also concluded, on the basis of experiments performed to date, that the product of the Motorola process is virtually identical to the product of a simple electroless nickel plating process.

Petersen, R.C.

1980-07-01T23:59:59.000Z

285

13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Summary Discussion, 10-13 August 2003, Vail, Colorado  

SciTech Connect (OSTI)

The 13th Workshop discussion sessions addressed recent progress, critical issues in implementing new technologies, and the role of fundamental R&D in the growing PV industry. For the first time, we included a rump session, which was held on Sunday evening, August 10. This session included a panel of representatives, from various photovoltaic companies, who led a discussion of''R&D Challenges in Si PV.'' A special poster/presentation session was held on Monday evening, August 11, in which NREL/DOE subcontractors highlighted their results of research performed during the current subcontract period. This session served as a subcontract review. The workshop offered special sessions to discuss: (1) High-Efficiency Si Solar Cells, which reviewed progress made in implementing high-efficiency Si solar cell fabrication processes in the manufacturing environment; (2) Advanced Processing, as future potential approaches for making Si solar cells; (3) Commercial Issues, which addressed basic understanding behind recent processes that have been used by the PV industry; and (4) Automation and Equipment, to address capabilities and requirements of new manufacturing equipment.

Sopori, B.; Sinton, R.; Tan, T.; Swanson, D.

2004-01-01T23:59:59.000Z

286

Silicone metalization  

DOE Patents [OSTI]

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09T23:59:59.000Z

287

Silicone metalization  

DOE Patents [OSTI]

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2006-12-05T23:59:59.000Z

288

antibiotic-impregnated silicone rubber: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

289

Role of point defects/defect complexes in silicon device processing. Book of abstracts, fourth workshop  

SciTech Connect (OSTI)

The 41 abstracts are arranged into 6 sessions: impurities and defects in commercial substrates: their sources, effects on material yield, and material quality; impurity gettering in silicon: limits and manufacturability of impurity gettering and in silicon solar cells; impurity/defect passivation; new concepts in silicon growth: improved initial quality and thin films; and silicon solar cell design opportunities.

Not Available

1994-06-01T23:59:59.000Z

290

Lobbyist Disclosure Form - Silicon Valley | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Lobbyist Disclosure Form - Silicon Valley.pdf More Documents & Publications Lobbyist Disclosure Form - AltEn Lobbyist Disclosure Form - First Solar Interested Parties - Shipp...

291

Solar Energy Materials & Solar Cells 78 (2003) 567595 Low-mobility solar cells: a device physics primer  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 78 (2003) 567­595 Low-mobility solar cells: a device physics, Syracuse, New York 13244-1130, USA Abstract The properties of pin solar cells based on photogeneration for the solar conversion efficiency of amorphous silicon-based cells that are limited by valence bandtail

Schiff, Eric A.

292

CRADA Final Report: Process development for hybrid solar cells  

E-Print Network [OSTI]

development for hybrid solar cells Summary of the specific20 wafers with full tandem solar cell test structure perNitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2

Ager, Joel W

2011-01-01T23:59:59.000Z

293

Matter & Energy Solar Energy  

E-Print Network [OSTI]

See Also: Matter & Energy Solar Energy· Electronics· Materials Science· Earth & Climate Energy and the Environment · Renewable Energy· Environmental Science · Reference Chemical compound· Semiconductor· Gallium at the University of Illinois, the future of solar energy just got brighter. Although silicon is the industry

Rogers, John A.

294

E-Print Network 3.0 - advanced technology solar Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

physics. Wafer silicon photovoltaic technology. Survey... Photovoltaics: Advanced Solar Energy Conversion, by M. A. Green (Springer, 2006) Solar Electricity, by T... Spring 2012...

295

Solar Chemical Peculiarities?  

E-Print Network [OSTI]

Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar "analogs", the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel.

Carlos Allende Prieto

2006-12-08T23:59:59.000Z

296

European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2BO.1.5 BORON-OXYGEN-RELATED RECOMBINATION CENTERS IN COMPENSATED SILICON  

E-Print Network [OSTI]

25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2BO.1 Rougieux2 , Daniel Macdonald2 , Karsten Bothe1 , and Jan Schmidt1 1 Institute for Solar Energy Research and Computer Science, The Australian National University Canberra ACT 0200, Australia ABSTRACT: The impact

297

Integrated All-silicon Thin-film Power Electronics on Flexible Sheets For Ubiquitous Wireless Charging Stations based on Solar-energy Harvesting  

E-Print Network [OSTI]

the power inverter circuit. To generate an AC output current, the two solar modules (S1/2) are used to provide embedded power inversion, harvester control, and power amplification. This converts DC outputs from the solar modules to AC power for wireless device charging through patterned capacitive antennas

298

Development of an In-line Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells: Final Technical Report, 2 August 2002-15 November 2004  

SciTech Connect (OSTI)

The objective of this subcontract over its two-phase, two-year duration was to design and develop improvements to the existing Sinton Consulting R&D minority-carrier lifetime testers. The improvements enable the possibilities for performing various in-line diagnostics on crystalline silicon wafers and cells for solar cell manufacturing lines. This facilitates manufacturing optimization and improved process control. The scope of work for Phase I was to prototype industrial applications for the improved instruments. A small-sample-head version of the instrument was designed and developed in this effort. This new instrument was complemented by detailed application notes detailing the productive use of minority-carrier lifetime measurements for process optimization and routine process control. In Phase II, the results from the first year were applied to design new instruments for industrial applications. These instruments were then characterized and documented. We report here on four new instruments, each optimized for a specific application as demanded by industrial customers. The documentation for these instruments was very technical and involved considerable R&D. Applications were developed that applied the latest in R&D on industrial silicon materials. By investigating the compromises that would be necessary to measure industrial material directly without the sample preparation that is commonly done for good research, we were able to develop several very innovative applications that can now be done directly in the production line for process control.

Sinton, R. A.

2004-12-01T23:59:59.000Z

299

Solar cells with a twist Comments ( 35)  

E-Print Network [OSTI]

Solar cells with a twist Article Comments ( 35) JULIE STEENHUYSEN REUTERS OCTOBER 7, 2008 AT 9:58 AM EDT CHICAGO -- U.S. researchers have found a way to make efficient silicon-based solar cells of buildings as opportunities for solar energy," Prof. Rogers said in a telephone interview. Solar cells, which

Rogers, John A.

300

Characterization of temperature profile in furnace and solubility of iron in silicon  

E-Print Network [OSTI]

A better understanding of the behavior of impurities, such as iron, in silicon can lead to increases in solar cell efficiency. The purpose of this thesis was to study the behavior of iron in silicon via three sub-tasks: ...

Modi, Vrajesh Y

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

NANOCOMPOSITE ENABLED SENSITIZED SOLAR CELL  

E-Print Network [OSTI]

technologies. Silicon photovoltaic module cost have continuegeneration photovoltaic panels due to their low cost, easycost-efficient multiple junction solar devices with remarkably high efficiency should be the direction and objective of photovoltaic

Phuyal, Dibya

2012-01-01T23:59:59.000Z

302

Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices  

SciTech Connect (OSTI)

SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

Martin U. Pralle; James E. Carey

2010-07-31T23:59:59.000Z

303

Ultraviolet selective silicon photodiode  

E-Print Network [OSTI]

(' silicon surfa&(& that n&ost of t h&) phologeneraied hole-el( & tron pairs are k&st by surface rccornbinai ion before being nolle&. trxl hy a pr). jun?i, ion. The major cause of surl'a&. e re?omhination is probably due Io lifetim(. shortening ol' Lhe... drpth corresponded to a high& r shor4wav? length rcsponsiv- ity tlirough liis ( xperimcnial diodes with junction dcpl ha ol'0. -'I to 2 0 pm. I indmayer and Allison [4I] I'abri&. ated n+-p solar cells with junction &lcpths of approximately 0. 1, 0. 15...

Chintapalli, Koteswara Rao

1992-01-01T23:59:59.000Z

304

Amorphous Silicon  

Broader source: Energy.gov [DOE]

DOE has a proven track record of funding successes in amorphous silicon (a-Si)research. A list of current projects, summary of the benefits, and discussion on the production and manufacturing of...

305

Silicon nitride/silicon carbide composite powders  

DOE Patents [OSTI]

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Dunmead, Stephen D. (Midland, MI); Weimer, Alan W. (Midland, MI); Carroll, Daniel F. (Midland, MI); Eisman, Glenn A. (Midland, MI); Cochran, Gene A. (Midland, MI); Susnitzky, David W. (Midland, MI); Beaman, Donald R. (Midland, MI); Nilsen, Kevin J. (Midland, MI)

1996-06-11T23:59:59.000Z

306

ELECTRON MICROSCOPY ANALYSIS OF SILICON ISLANDS AND LINE STRUC-TURES FORMED ON SCREEN-PRINTED AL-DOPED P+  

E-Print Network [OSTI]

silicon wafers are mainly used as back surface field (BSF) in p-type crystalline silicon solar cells [1,2] and as rear side emitter in screen-printed back junction n-type crystalline silicon solar cells [3]. From dop in an infrared conveyor belt furnace at 900°C for 13 seconds. In order to investigate the p + surface

307

A study of laser annealing effects in boron ion implanted polycrystalline silicon films  

E-Print Network [OSTI]

, large-grain polycrysta11ine silicon has potential use for large volume production of low cost solar cells [1-3] . Polycrystalline silicon is easy to prepare and is compa- tible with monolithic silicon integrated circuit technology; however... of 2O pico second [5]. The MOSFET's fabricated to date on thin films of polycrystalline silicon have also exhibited poor transconductance [5J. It has been reported that the electrical properties of ion implanted polycrystalline silicon can...

Suh, Inhak Harry

1982-01-01T23:59:59.000Z

308

Concentrator silicon cell research  

SciTech Connect (OSTI)

This project continued the developments of high-efficiency silicon concentrator solar cells with the goal of achieving a cell efficiency in the 26 to 27 percent range at a concentration level of 150 suns of greater. The target efficiency was achieved with the new PERL (passivated emitter, rear locally diffused) cell structure, but only at low concentration levels around 20 suns. The PERL structure combines oxide passivation of both top and rear surfaces of the cells with small area contact to heavily doped regions on the top and rear surfaces. Efficiency in the 22 to 23 percent range was also demonstrated for large-area concentrator cells fabricated with the buried contact solar cell processing sequence, either when combined with prismatic covers or with other innovative approaches to reduce top contact shadowing. 19 refs.

Green, M.A.; Wenham, S.R.; Zhang, F.; Zhao, J.; Wang, A. [New South Wales Univ., Kensington (Australia). Solar Photovoltaic Lab.

1992-04-01T23:59:59.000Z

309

E-Print Network 3.0 - area silicon tracking Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

semiconductors can be integrated with silicon to form hybrid organicsilicon solar cells that are both efficient Source: Sturm, James C.- Department of Electrical...

310

NREL scientists develop near-field optical microscopy techniques for imaging solar cell junctions and identify  

E-Print Network [OSTI]

and Characterization team examined local junction breakdown in silicon and thin-film solar cells by electroluminescenceNREL scientists develop near-field optical microscopy techniques for imaging solar cell junctions is an increasingly important issue for silicon solar cells. The issue has taken center stage now that the solar

311

Structure of All-Polymer Solar Cells Impedes Efficiency  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

thin films of semiconducting polymers as a possible alternative to silicon-based solar cells. Such devices would have the advantages of being cheap to produce,...

312

Solar cell array interconnects  

DOE Patents [OSTI]

Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

1995-11-14T23:59:59.000Z

313

Solar cell array interconnects  

DOE Patents [OSTI]

Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA); Colella, Nicolas J. (Livermore, CA); Williams, Kenneth A. (Livermore, CA)

1995-01-01T23:59:59.000Z

314

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network [OSTI]

of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

Huang, Jianqiao

2012-01-01T23:59:59.000Z

315

Device Architecture Simplification of Laser Pattering in High-Volume Crystalline Silicon Solar Cell Fabrication using Intensive Computation for Design and Optimization  

SciTech Connect (OSTI)

Prices of Si based solar modules have been continuously declining in recent years. Goodrich is pointing out that a significant portion of these cost reductions have come about due to ?economies of scale? benefits, but there is a point of diminishing returns when trying to lower cost by simply expanding production capacity [1]. Developing innovative high volume production technologies resulting in an increase of conversion efficiency without adding significant production cost will be necessary to continue the projected cost reductions. The Foundational Program to Advance Cell Efficiency (F-PACE) is seeking to achieve this by closing the PV efficiency gap between theoretical achievable maximum conversion efficiency - 29% for c-Si - and the current typical production - 18.5% for a typical full area back contact c-Si Solar cell ? while targeting a module cost of $0.50/Watt . The research conducted by SolarWorldUSA and it?s partners within the FPACE framework focused on the development of a Hybrid metal-wrap-through (MWT) and laser-ablated PERC solar cell design employing a extrusion metallization scheme to achieve >20% efficient devices. The project team was able to simulate, develop and demonstrate the technologies necessary to build p-type MWT PERC cells with extruded front contacts. Conversion efficiencies approaching 20% were demonstrated and a path for further efficiency improvements identified. A detailed cost of ownership calculation for such a device was based on a NREL cost model and is predicting a $/Watt cost below 85 cents on a 180 micron substrate. Several completed or planned publications by SolarWorldUSA and our partners are based on the research conducted within this project and are adding to a better understanding of the involved technologies and materials. Several aspects and technologies of the proposed device have been assessed in regards to technical effectiveness and economic feasibility. It has been shown in a pilot demonstration with wafer thicknesses down to 120 micron that further wafer thickness reduction is only economically viable if handling and contact formation limitations are addressed simultaneously. Furthermore the project partners assessed and demonstrated the feasibility of processing wafers with vias connecting front and back sides through a PERC cell process and aligning and connecting those vias with a non-contact metallization. A close cooperation between industry and institutes of higher education in the Pacific Northwest as shown in this project is of direct benefit to the public and is contributing to the education of the next generation of PV engineers and scientist.

Grupp Mueller, Guenther [SolarWorld; Herfurth, Hans [Fraunhofer CLT; Dunham, Scott [University of Washington; Xu, Baomin [PARC

2013-11-15T23:59:59.000Z

316

Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing  

SciTech Connect (OSTI)

A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato [University of Ferrara - Physics and Earth Science Department, Via Saragat 1, 44122 Ferrara (Italy)

2014-09-26T23:59:59.000Z

317

Optimized Designs and Materials for Nanostructure Based Solar Cells  

E-Print Network [OSTI]

efficiency of solar panels and power to weight ratio insolar cells, there exist two basic processes to convert sunlight power topower to a load connected when charged by Sun. The typical output voltage of a silicon based solar

Shao, Qinghui

2009-01-01T23:59:59.000Z

318

Journal of Crystal Growth 241 (2002) 4550 Boron doping of silicon layers grown by liquid phase epitaxy  

E-Print Network [OSTI]

Energy Systems, Department of Engineering, Australian National University, Acton, 0200, Australia film solar cell applications as it allows the growth of a back surface field and a lightly doped bulk; B1. Boron; B1. Silicon; B3. Solar cells 1. Introduction Thin film silicon solar cells

319

Process and apparatus for casting multiple silicon wafer articles  

DOE Patents [OSTI]

Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

Nanis, Leonard (Palo Alto, CA)

1992-05-05T23:59:59.000Z

320

Understanding and improving hole transport in hydrogenated amorphous silicon photovoltaics  

E-Print Network [OSTI]

While hydrogenated amorphous silicon (a-Si:H) solar cells have been studied extensively for the previous four decades, the low performance of the devices is still not well understood. The poor efficiency (below 10%, even ...

Johlin, Eric (Eric Carl)

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

IMPROVED SPECTRAL RESPONSE OF SILICONE ENCAPSULANTED PHOTOVOLTAIC MODULES  

E-Print Network [OSTI]

IMPROVED SPECTRAL RESPONSE OF SILICONE ENCAPSULANTED PHOTOVOLTAIC MODULES Nick E. Powell 1* , Byung the benefit of using optically superior silicone encapsulant materials over the incumbent ethylene vinyl in the UV region of the solar spectrum. Single cell mini-modules were prepared using two different

322

Solidification of polycrystalline silicon ingots : simulation and characterization of the microstructure  

E-Print Network [OSTI]

.90 1. Introduction. The most important development in silicon solar cells is due to the substitution solidification of poly- crystalline silicon (POLYX). The capacity of the initial furnace was about 1 kg and today the silicon in a graphite crucible using induction heating furnace. The crucible is well insulated to reduce

Paris-Sud XI, Université de

323

Status and Future of Silicon Photovoltaics Presented at: Renewable energies in the service of humanity: the  

E-Print Network [OSTI]

Status and Future of Silicon Photovoltaics Presented at: Renewable energies in the service at a time 0.5 watts each $100/watt $200/watt Wafered Silicon Process Polysilicon Wafer Solar Cell Solar companies Oil companies Japanese companies Japanese roof program German FIT #12;0,60 6,00 60,00 1 10 100

Canet, Léonie

324

Chemical technology news from across RSC Publishing. Printing solar panels  

E-Print Network [OSTI]

Publishing Chemical technology news from across RSC Publishing. Printing solar panels 22 January size) silicon microcells that connect together to form flexible solar panels. By stamping hundreds solar panels 2/8/2010http://www.rsc.org/Publishing/ChemTech/Volume/2010/02/printing_solar.asp #12;Page 2

Rogers, John A.

325

Measurement of light capture in solar cells from silver- and tin-plated patterned bus bars  

E-Print Network [OSTI]

Bus bars on solar cells shade silicon from light. When the bus bars are patterned, they can reflect light back onto the silicon using total internal reflection. These patterned bus bars are tin plated and produce 1-2.5% ...

Winiarz, Christine Eve

2007-01-01T23:59:59.000Z

326

Electroabsorption measurements and built-in potentials in amorphous silicongermanium solar cells  

E-Print Network [OSTI]

-1130 S. Guha and J. Yang United Solar Systems Corporation, 1100 West Maple Road, Troy, Michigan 48084Electroabsorption measurements and built-in potentials in amorphous silicon­germanium solar cells J spectra in n-i-p solar cells with hydrogenated amorphous silicon­germanium alloy absorber layers. At lower

Schiff, Eric A.

327

Review paper: Toward highly efficient quantum-dot-and dye-sensitized solar cells  

E-Print Network [OSTI]

Review paper: Toward highly efficient quantum-dot- and dye-sensitized solar cells Hongsik Choi Interface control Light harvesting Tandem solar cell a b s t r a c t Dye- and quantum-dot-sensitized solar technologies of silicon-based solar cells should be resolved [7]. Dye-sensitized solar cells (DSSCs) have been

Park, Byungwoo

328

E-Print Network 3.0 - amorphous solar cell Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with silver nanoparticlessolar cells with silver nanoparticles C. Eminian, F... silicon solar cells to achieve light trapping. Nanoparticles have a size 200nm and are...

329

E-Print Network 3.0 - analyzing solar reflective Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Market Studies Collection: Power Transmission, Distribution and Plants 3 SIMULATION OF LIGHT IN-COUPLING AT OBLIQUE ANGLES IN THIN-FILM SILICON SOLAR CELLS Summary: roughness in...

330

Buried oxide layer in silicon  

DOE Patents [OSTI]

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

2001-01-01T23:59:59.000Z

331

Performance Testing using Silicon Devices - Analysis of Accuracy: Preprint  

SciTech Connect (OSTI)

Accurately determining PV module performance in the field requires accurate measurements of solar irradiance reaching the PV panel (i.e., Plane-of-Array - POA Irradiance) with known measurement uncertainty. Pyranometers are commonly based on thermopile or silicon photodiode detectors. Silicon detectors, including PV reference cells, are an attractive choice for reasons that include faster time response (10 us) than thermopile detectors (1 s to 5 s), lower cost and maintenance. The main drawback of silicon detectors is their limited spectral response. Therefore, to determine broadband POA solar irradiance, a pyranometer calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under clear-sky conditions with respect to a broadband reference radiometer. The pyranometer is then used for various scenarios including varying airmass, panel orientation and atmospheric conditions. This would not be an issue if all irradiance wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately, the scattering and absorption signature varies widely with wavelength and the calibration factor for the silicon photodiode pyranometer is not appropriate for other conditions. This paper reviews the issues that will arise from the use of silicon detectors for PV performance measurement in the field based on measurements from a group of pyranometers mounted on a 1-axis solar tracker. Also we will present a comparison of simultaneous spectral and broadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.

Sengupta, M.; Gotseff, P.; Myers, D.; Stoffel, T.

2012-06-01T23:59:59.000Z

332

Light-induced degradation at the silicon/silicon dioxide interface  

SciTech Connect (OSTI)

Single-crystal silicon point-contact solar cells show a degradation in their efficiency after being exposed to concentrated sunlight. This change has been linked to an increase in the surface recombination velocity. A similar effect is produced by carrier injection under forward bias. The annealing kinetics, the role of ultraviolet light, and possible causes for the creation of surface states are discussed.

Gruenbaum, P.E.; Sinton, R.A.; Swanson, R.M.

1988-04-25T23:59:59.000Z

333

Fabrication of a luminescent solar concentrator that minimizes self-absorption losses using inter-chromophore energy transfer  

E-Print Network [OSTI]

The projected need for carbon-free power during this century is immense. Solar power offers the largest resource base to supply this need, but in light of recent silicon shortages, it is an open question whether silicon ...

Currie, Michael James

2007-01-01T23:59:59.000Z

334

A survey of thin-film solar photovoltaic industry & technologies  

E-Print Network [OSTI]

A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

Grama, Sorin

2007-01-01T23:59:59.000Z

335

Front contact solar cell with formed emitter  

SciTech Connect (OSTI)

A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

Cousins, Peter John

2014-11-04T23:59:59.000Z

336

Front contact solar cell with formed emitter  

DOE Patents [OSTI]

A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

Cousins, Peter John (Menlo Park, CA)

2012-07-17T23:59:59.000Z

337

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A substrate is described for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3{times}10{sup {minus}3} ohm-cm. 4 figs.

Ciszek, T.F.

1998-07-28T23:59:59.000Z

338

Accurate performance measurement of silicon solar cells  

E-Print Network [OSTI]

Shepard for electronics advice. I would like to acknowledge the Energy Research & Development Corporation uncertainty. For routine measurement of large numbers of sola

339

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A substrate for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1998-01-01T23:59:59.000Z

340

The Silicon Solar Cell Turns 50  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe MolecularPlaceThe RoadDavidofSequence andDaryl

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Enabling Thin Silicon Solar Cell Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series toESnet4: Networking for37 East and WestLydia

342

Solar Rights  

Broader source: Energy.gov [DOE]

In June 2010, Louisiana enacted solar rights legislation (HB 751) that prohibits certain entities from unreasonably restricting a property owner from installing a solar collector. Solar collectors...

343

Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment  

DOE Patents [OSTI]

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

1982-01-01T23:59:59.000Z

344

Advanced silicon photonic modulators  

E-Print Network [OSTI]

Various electrical and optical schemes used in Mach-Zehnder (MZ) silicon plasma dispersion effect modulators are explored. A rib waveguide reverse biased silicon diode modulator is designed, tested and found to operate at ...

Sorace, Cheryl M

2010-01-01T23:59:59.000Z

345

Back contact to film silicon on metal for photovoltaic cells  

DOE Patents [OSTI]

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Branz, Howard M.; Teplin, Charles; Stradins, Pauls

2013-06-18T23:59:59.000Z

346

Microstructured anti-reflection surface design for the omni-directional solar cells  

E-Print Network [OSTI]

Microstructured anti-reflection surface design for the omni-directional solar cells Li Chen for the formation of hemispherical structures as an omni-directional anti-reflection (omni-AR) coating in solar cell current in such hemispherical solar cells hence enhanced to 1.5 times of bulk silicon solar cells

Zhou, Weidong

347

Interdisciplinary Institute for Innovation How do solar photovoltaic feed-in  

E-Print Network [OSTI]

with solar panel and silicon prices? An empirical study Arnaud De La Tour Matthieu Glachant Working Paper 13Interdisciplinary Institute for Innovation How do solar photovoltaic feed-in tariffs interact@mines-paristech.fr hal-00809449,version2-27May2013 #12;1 How do solar photovoltaic feed-in tariffs interact with solar

Paris-Sud XI, Université de

348

Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur  

E-Print Network [OSTI]

We apply soft x-ray emission spectroscopy (XES) to measure the electronic structure of crystalline silicon supersaturated with sulfur (up to 0.7 at. %), a candidate intermediate-band solar cell material. Si L[subscript ...

Sullivan, Joseph Timothy

349

Glass-silicon column  

DOE Patents [OSTI]

A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

Yu, Conrad M.

2003-12-30T23:59:59.000Z

350

Effective optical response of silicon to sunlight in the finite-difference time-domain method  

E-Print Network [OSTI]

Alexei Deinega* and Sajeev John Department of Physics, University of Toronto, 60 St. George Street simulation of light propagation and absorption in silicon in the spectral range of 300­1000 nm. Numerical precision of our model is demonstrated for Mie scattering from a silicon sphere and solar absorption

John, Sajeev

351

Breakthrough Cutting Technology Promises to Reduce Solar Costs...  

Broader source: Energy.gov (indexed) [DOE]

Silicon Genesis is a San Jose, Calif., company that is advancing the field of solar energy by developing a process that will virtually eliminate all waste when cutting materials...

352

2010 Solar Technologies Market Report, November 2011, Energy...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MENA Middle East and North Africa MG-Si metallurgical-grade silicon MNGSEC Martin Next Generation Solar Energy Center MOU memorandum of understanding MT metric ton MW megawatt...

353

Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers  

SciTech Connect (OSTI)

Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

Myers, D. R.

2011-01-01T23:59:59.000Z

354

Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers: Preprint  

SciTech Connect (OSTI)

Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

Myers, D. R.

2011-04-01T23:59:59.000Z

355

Recent technological advances in thin film solar cells  

SciTech Connect (OSTI)

High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

Ullal, H.S.; Zwelbel, K.; Surek, T.

1990-03-01T23:59:59.000Z

356

Spin-dependent processes in amorphous silicon-rich silicon-nitride S.-Y. Lee,1  

E-Print Network [OSTI]

diodes9 and a-Si:H solar cells.10 Fol- lowing coherent manipulation of paramagnetic centers, tran- sient-band , TSAMPLE=15 K. Dark and illuminated IV curves of the p-i-n devices were measured at room temperature and T amorphous silicon nitride a-SiNx:H has been used widely as a dielectric for thin-film transistors,1 solar

McCamey, Dane

357

The Focusing Optics x-ray Solar Imager: FOXSI Sam Kruckera,b, Steven Christec, Lindsay Glesenera,d, Shin-nosuke Ishikawaa, Stephen  

E-Print Network [OSTI]

University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan ABSTRACT The Focusing Optics x-ray Solar Imager. Today's leading solar HXR instrument, the Reuven Ramaty High Energy Solar Spectroscopic Imager (RHESSI, solar physics, solar flares, silicon strip detectors, grazing-incidence optics, high-energy x-ray optics

California at Berkeley, University of

358

Highly Efficient Silicon Light Emitting Diode  

E-Print Network [OSTI]

silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap

Leminh Holleman Wallinga; P. Leminh; J. Holleman; H. Wallinga

2000-01-01T23:59:59.000Z

359

Micromachined silicon electrostatic chuck  

DOE Patents [OSTI]

An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

Anderson, R.A.; Seager, C.H.

1996-12-10T23:59:59.000Z

360

Solar Easements  

Broader source: Energy.gov [DOE]

New Hampshire's "solar skyspace easement" provisions allow property owners to create solar easements in order to create and preserve a right to unobstructed access to solar energy. Easements remain...

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Solar Easements  

Broader source: Energy.gov [DOE]

Virginia's solar easement law is similar to those in effect in other states. The Virginia Solar Easements Act of 1978 allows property owners to create binding solar easements for the purpose of...

362

Metal-Insulating-Semi-Incorporation of Silicon Nanoparticles into  

E-Print Network [OSTI]

Cells Introduction Photovoltaic Cells Conclusions Acknowledgements PIN junctions · P and N type doped photovoltaic cells diode-like behavior and ideally allow for unidirectional current flow. · Two way current flow allows for carrier recombination and reduces cell efficiency. In this project, silicon based solar

363

Superlattice cascade solar cell  

SciTech Connect (OSTI)

This paper reports progress toward realization of a new cascade solar cell structure whose chief advantages over other present concepts are: use of silicon for the substrate and low bandgap cell; avoidance of the necessity of lattice matching; and incorporation of a GaAs/GaP superlattice to enhance efficiency and provide a low-resistance connecting junction. Details of the design and operation of an OMCVD system for growing this structure are presented. Results of experiments to optimize layer thickness, compositional uniformity, and surface morphology are described.

Wanlass, M.W.; Blakeslee, A.E.

1982-09-01T23:59:59.000Z

364

A solar module fabrication process for HALE solar electric UAVs  

SciTech Connect (OSTI)

We describe a fabrication process used to manufacture high power-to-weight-ratio flexible solar array modules for use on high-altitude-long-endurance (HALE) solar-electric unmanned air vehicles (UAVs). These modules have achieved power-to-weight ratios of 315 and 396 W/kg for 150{mu}m-thick monofacial and 110{mu}m-thick bifacial silicon solar cells, respectively. These calculations reflect average module efficiencies of 15.3% (150{mu}m) and 14.7% (110{mu}m) obtained from electrical tests performed by Spectrolab, Inc. under AMO global conditions at 25{degrees}C, and include weight contributions from all module components (solar cells, lamination material, bypass diodes, interconnect wires, and adhesive tape used to attach the modules to the wing). The fabrication, testing, and performance of 32 m{sup 2} of these modules will be described.

Carey, P.G.; Aceves, R.C.; Colella, N.J.; Williams, K.A. [Lawrence Livermore National Lab., CA (United States); Sinton, R.A. [Private Consultant, San Jose, CA (United States); Glenn, G.S. [Spectrolab, Inc., Sylmar, CA (United States)

1994-12-12T23:59:59.000Z

365

Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft for  

E-Print Network [OSTI]

Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft- This paper presents an energy-harvesting system consisting of amorphous-silicon (a-Si) solar cells and thin of the energy-harvesting system. The solar module consists of solar cells in series operating at an output

366

Toward High-Performance Organic-Inorganic Hybrid Solar Cells: Bringing Conjugated Polymers and Inorganic Nanocrystals in Close  

E-Print Network [OSTI]

to traditional silicon solar cells due to the capacity of producing high- efficiency solar energy in a cost these advantages and progress, organic-inorganic hybrid solar cells still exhibit much lower PCEs (iToward High-Performance Organic-Inorganic Hybrid Solar Cells: Bringing Conjugated Polymers

Lin, Zhiqun

367

25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2CO.4.3 IMPACT OF LATERAL VARIATIONS ON THE SOLAR CELL EFFICIENCY  

E-Print Network [OSTI]

analyze various monocrystalline silicon solar cells. The light-IV curves around the maximum power point.3 IMPACT OF LATERAL VARIATIONS ON THE SOLAR CELL EFFICIENCY David Hinken, Karsten Bothe and Rolf Brendel-dimensional approach to calculate the impact of local parameters on the global solar cell efficiency. The presented

368

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents [OSTI]

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20T23:59:59.000Z

369

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents [OSTI]

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

370

CALIFORNIA SOLAR DATA MANUAL  

E-Print Network [OSTI]

Estimating Unmeasured Solar Radiation Quantities . . . . . .Appendix C - Appendix 0 - Solar Radiation Glossary. ConversSolar Data a. Solar Radiation. , , . , . . , , , , . , . . .

Berdahl, P.

2010-01-01T23:59:59.000Z

371

Community Shared Solar with Solarize  

Broader source: Energy.gov [DOE]

An overview of the concept behind The Solarize Guidebook, which offers neighborhoods a plan for getting volume discounts when making group purchases of rooftop solar energy systems.

372

Nanoparticle-based etching of silicon surfaces  

DOE Patents [OSTI]

A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

Branz, Howard (Boulder, CO); Duda, Anna (Denver, CO); Ginley, David S. (Evergreen, CO); Yost, Vernon (Littleton, CO); Meier, Daniel (Atlanta, GA); Ward, James S. (Golden, CO)

2011-12-13T23:59:59.000Z

373

Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach  

E-Print Network [OSTI]

´ a , Rolf Brendel a,b a Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal Doping (LTD) as well as standard tube furnace phosphorus diffusion. We find a considerably smaller J0 for process optimization. & 2012 Elsevier B.V. All rights reserved. 1. Introduction In silicon solar cells

374

III-V Growth on Silicon Toward a Multijunction Cell  

SciTech Connect (OSTI)

A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

2005-11-01T23:59:59.000Z

375

Method for producing silicon nitride/silicon carbide composite  

DOE Patents [OSTI]

Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

Dunmead, Stephen D. (Midland, MI); Weimer, Alan W. (Midland, MI); Carroll, Daniel F. (Midland, MI); Eisman, Glenn A. (Midland, MI); Cochran, Gene A. (Midland, MI); Susnitzky, David W. (Midland, MI); Beaman, Donald R. (Midland, MI); Nilsen, Kevin J. (Midland, MI)

1996-07-23T23:59:59.000Z

376

Structure, defects, and strain in silicon-silicon oxide interfaces  

SciTech Connect (OSTI)

The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

Kova?evi?, Goran, E-mail: gkova@irb.hr; Pivac, Branko [Department of Materials Physics, Rudjer Boskovic Institute, Bijeni?ka 56, P.O.B. 180, HR-10002 Zagreb (Croatia)

2014-01-28T23:59:59.000Z

377

Philadelphia, Pennsylvania: Solar in Action (Brochure), Solar...  

Broader source: Energy.gov (indexed) [DOE]

Philadelphia, Pennsylvania: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Philadelphia, Pennsylvania: Solar in Action (Brochure),...

378

Fabrication of porous silicon membranes  

E-Print Network [OSTI]

OF THE FILTER APPLICATION OF POROUS SILICON A. Density of Porous Silicon B. Stabilization of Porous Silicon Membranes C. Flow Test D. Porous Polycrystalline Silicon 54 58 62 65 vn TABLE OF CONTENTS (Continued) CHAPTER VI EXTENSIONS AND CONCLUSIONS... Membranes 13. Density Change of Porous Silicon at 125'C 14. Density Change oi' Porous Silicon at 250 C 15. Nitrogen Flow on a Porous Silicon Membrane Page 15 16 33 39 39 44 46 54 59 59 62 LIST OF FIGURES Figure 10. 12. 14. 17. 18. 19...

Yue, Wing Kong

1988-01-01T23:59:59.000Z

379

Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell  

E-Print Network [OSTI]

We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

Li, Tong; Jiang, Chun

2010-01-01T23:59:59.000Z

380

Bulk Heterojunction Organic Solar Cells utilizing a Benzothiadiazole-based Oligomer  

E-Print Network [OSTI]

Advantages over silicon solar cells · Roll-to-roll manufacturing lowers costs through a faster rate cells, which have issues of their own, will remain the dominant solar energy provider and the world to find a viable option to alleviate global energy concerns. One proposed solution, the organic solar cell

Collins, Gary S.

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*  

E-Print Network [OSTI]

1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

382

CNT-SI HETEROJUNCTION SOLAR CELLS WITH STRUCTURE-CONTROLLED SINGLE-WALL CARBON NANOTUBE FILMS  

E-Print Network [OSTI]

CNT-SI HETEROJUNCTION SOLAR CELLS WITH STRUCTURE- CONTROLLED SINGLE-WALL CARBON NANOTUBE FILMS. The heterojunction solar cell was fabricated by dry depositing the SWNT film to the 3 mm by 3 mm n-type silicon solar cells. We proposed a water-vapor treatment to build up SWNTs to a self-assembled micro- honeycomb

Maruyama, Shigeo

383

Reproduced with pennission from Elsevier Solar CelLS',30 (1991) 515-523 515'f'  

E-Print Network [OSTI]

emerged since the early 1980s. In particular, thin film solar cell technologies such as amorphous silicon To investigate the implications of projected advances in thin film solar cells for PV hydrogen production, we set). A large (> 10 MW) tilted, fixed, flat plate PV array using thin film solar modules is coupled directly

384

Air-Stable High-Efficiency Solar Cells Using Improved Single-Walled Carbon Nanotube Films  

E-Print Network [OSTI]

1 Air-Stable High-Efficiency Solar Cells Using Improved Single-Walled Carbon Nanotube Films Kehang-3-5800-6983. #12;2 ABSTRACT We present the single-walled carbon nanotube/silicon (SWNT/Si) solar cells approaching, the PCEs of the fabricated solar cells slightly increased after six-month exposure in air without any

Maruyama, Shigeo

385

Plasmonic enhancement of thin-film solar cells using gold-black C.J. Fredricksena  

E-Print Network [OSTI]

Plasmonic enhancement of thin-film solar cells using gold-black coatings C.J. Fredricksena , D. R thin-film amorphous-silicon solar cells enhance the short-circuit current by 20% over a broad spectrum and locally enhance the field strength. Keywords: plasmonics, thin-film, solar cell, metallic nanoparticles

Peale, Robert E.

386

innovati nAward-Winning Etching Process Cuts Solar Cell Costs  

E-Print Network [OSTI]

are wasted. Manufacturers have devised ways to boost the amount of light absorbed by silicon solar cellsinnovati nAward-Winning Etching Process Cuts Solar Cell Costs In general, when it comes to photovoltaic (PV) solar cells, the higher their efficiency, the higher their price tag. To increase cell

387

FRONTIERS ARTICLE Efficiency enhancement of copper contaminated radial pn junction solar cells  

E-Print Network [OSTI]

energy represents one of the most important sustainable and renewable energy sources. The most common power from solar cells [1]. The reason is that crystalline silicon solar cell manufacturingFRONTIERS ARTICLE Efficiency enhancement of copper contaminated radial p­n junction solar cells

Yang, Peidong

388

Dual gratings for enhanced light trapping in thin-film solar cells  

E-Print Network [OSTI]

, Ireland * christian.schuster@york.ac.uk Abstract: Thin film solar cells benefit significantly from; (350.6050) Solar energy. References and links 1. M. A. Green, J. Zhao, A. Wang, and S. R. Wenham, "Progress and outlook for high-efficiency crystalline silicon solar cells," Sol. Energy Mater. Sol. Cells 65

389

Method of restoring degraded solar cells  

DOE Patents [OSTI]

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200 C for at least 30 minutes restores their efficiency. 2 figs.

Staebler, D.L.

1983-02-01T23:59:59.000Z

390

Method of restoring degraded solar cells  

DOE Patents [OSTI]

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

Staebler, David L. (Lawrenceville, NJ)

1983-01-01T23:59:59.000Z

391

Award-Winning Etching Process Cuts Solar Cell Costs (Fact Sheet)  

SciTech Connect (OSTI)

NREL scientists have invented the 'black silicon' nanocatalytic wet-chemical etch, an inexpensive, one-step process that literally turns the solar cells black, allowing them to absorb more than 98% of incident sunlight. The process costs just a few cents per watt of solar-cell power-producing capacity. Increases in manufactured cell efficiencies of up to 0.8% are possible because of the reduced reflectance of black silicon. This would reduce silicon solar module costs by $5-$10 per module.

Not Available

2013-08-01T23:59:59.000Z

392

6N Silicon Inc | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectric Coop,SaveWhiskey Flatshydro Homepowering9centuryGeneralN Silicon Inc

393

Crystalline Silicon Photovoltaics Research  

Broader source: Energy.gov [DOE]

DOE supports crystalline silicon photovoltaic (PV) research and development efforts that lead to market-ready technologies. Below are a list of the projects, summary of the benefits, and discussion...

394

Method of forming contacts for a back-contact solar cell  

DOE Patents [OSTI]

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Manning, Jane

2014-07-15T23:59:59.000Z

395

Silicon nanopatterning for device applications  

E-Print Network [OSTI]

dimensional array of photovoltaic solar cells using non-such as photonic, photovoltaic, solar cells, capacitors,dimensional array of photovoltaic solar cells using non-

Oh, Young

2012-01-01T23:59:59.000Z

396

Solar Easements  

Broader source: Energy.gov [DOE]

Rhode Island allows property owners to establish solar easements in the same manner and with the same effect as a conveyance of an interest in real property. Solar easements must be created in...

397

Solar Forecasting  

Broader source: Energy.gov [DOE]

On December 7, 2012, DOE announced $8 million to fund two solar projects that are helping utilities and grid operators better forecast when, where, and how much solar power will be produced at U.S....

398

Solar Easements  

Broader source: Energy.gov [DOE]

Kansas' solar easement provisions do not create an automatic right to sunlight. Rather, they allow parties to voluntarily enter into solar easement contracts for the purpose of ensuring adequate...

399

Solar Rights  

Broader source: Energy.gov [DOE]

Cities and counties in North Carolina generally may not adopt ordinances prohibiting the installation of "a solar collector that gathers solar radiation as a substitute for traditional energy for...

400

Development of concentrator solar cells  

SciTech Connect (OSTI)

A limited pilot production run on PESC silicon solar cells for use at high concentrations (200 to 400 suns) is summarized. The front contact design of the cells was modified for operation without prismatic covers. The original objective of the contract was to systematically complete a process consolidation phase, in which all the, process improvements developed during the contract would be combined in a pilot production run. This pilot run was going to provide, a basis for estimating cell costs when produced at high throughput. Because of DOE funding limitations, the Photovoltaic Concentrator Initiative is on hold, and Applied Solar`s contract was operated at a low level of effort for most of 1993. The results obtained from the reduced scope pilot run showed the effects of discontinuous process optimization and characterization. However, the run provided valuable insight into the technical areas that can be optimized to achieve the original goals of the contract.

Not Available

1994-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Optical properties of nanostructured silicon-rich silicon dioxide  

E-Print Network [OSTI]

We have conducted a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization ...

Stolfi, Michael Anthony

2006-01-01T23:59:59.000Z

402

Ultratough, Thermally Stable Polycrystalline Diamond/Silicon...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide Nanocomposites for Drill Bits Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide...

403

Crystalline Silicon Photovolatic Cell Basics  

Broader source: Energy.gov [DOE]

Crystalline silicon cells are made of silicon atoms connected to one another to form a crystal lattice. This lattice comprises the solid material that forms the photovoltaic (PV) cell's...

404

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network [OSTI]

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

405

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer  

DOE Patents [OSTI]

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1980-01-01T23:59:59.000Z

406

Floating Silicon Method  

SciTech Connect (OSTI)

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Kellerman, Peter

2013-12-21T23:59:59.000Z

407

Has sempra found El Dorado in solar PVs? grid parity may now be within reach  

SciTech Connect (OSTI)

Instead of using conventional polycrystalline silicon modules that turn sunlight into electricity, these solar panels use cadmium telluride, a lower-cost semiconductor manufactured into thin-film cells that are cheaper to manufacture than their silicon-based counterparts. Electricity is being produced at costs as low as 7.5 {cents}/kWh.

NONE

2009-03-15T23:59:59.000Z

408

Electrochemical thinning of silicon  

DOE Patents [OSTI]

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

Medernach, John W. (Albuquerque, NM)

1994-01-01T23:59:59.000Z

409

Electrochemical thinning of silicon  

DOE Patents [OSTI]

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

Medernach, J.W.

1994-01-11T23:59:59.000Z

410

Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment  

DOE Patents [OSTI]

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.

Pankove, J.I.; Wu, C.P.

1982-03-30T23:59:59.000Z

411

Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion  

SciTech Connect (OSTI)

ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

None

2010-09-01T23:59:59.000Z

412

CALIFORNIA SOLAR DATA MANUAL  

E-Print Network [OSTI]

Estimating Unmeasured Solar Radiation Quantities . . . . . .Weather Data . . . . . , . , . . . . . . . . . .Solar DataB. l'he Solar Constant. . . . . . C. Solar Time and Standard

Berdahl, P.

2010-01-01T23:59:59.000Z

413

Solar forecasting review  

E-Print Network [OSTI]

and forecasting of solar radiation data: a review,”forecasting of solar- radiation data,” Solar Energy, vol.sequences of global solar radiation data for isolated sites:

Inman, Richard Headen

2012-01-01T23:59:59.000Z

414

Reducing the Cost of Solar Cells  

SciTech Connect (OSTI)

Solar-powered electricity prices could soon approach those of power from coal or natural gas thanks to collaborative research with solar startup Ampulse Corporation at the National Renewable Energy Laboratory. Silicon wafers account for almost half the cost of today's solar photovoltaic panels, so reducing or eliminating wafer costs is essential to bringing prices down. Current crystalline silicon technology converts energy in a highly efficient manner; however, that technology is manufactured with processes that could stand some improvement. The industry needs a method that is less complex, creates less waste and uses less energy. First, half the refined silicon is lost as dust in the wafer-sawing process, driving module costs higher. Wafers are sawn off of large cylindrical ingots, or boules, of silicon. A typical 2-meter boule loses as many as 6,000 potential wafers during sawing. Second, the wafers produced are much thicker than necessary. To efficiently convert sunlight into electricity, the wafers need be only one-tenth the typical thickness. NREL, the Oak Ridge National Laboratory and Ampulse have partnered on an approach to eliminate this waste and dramatically lower the cost of the finished solar panels. By using a chemical vapor deposition process to grow the silicon on inexpensive foil, Ampulse is able to make the solar cells just thick enough to convert most of the solar energy into electricity. No more sawdust - and no more wasting refined silicon materials. NREL developed the technology to grow high-quality silicon and ORNL developed the metal foil that has the correct crystal structure to support that growth. Ampulse is installing a pilot manufacturing line in NREL's Process Development Integration Laboratory, where solar companies can work closely with lab scientists on integrated equipment to answer pressing questions related to their technology development, as well as rapidly overcoming R and D challenges and risk. NREL's program is focused on transformative innovation in the domestic PV industry. With knowledge and expertise acquired from the PDIL pilot production line tools, Ampulse plans to design a full-scale production line to accommodate long rolls of metal foil. The Ampulse process 'goes straight from pure silicon-containing gas to high-quality crystal silicon film,' said Brent Nelson, the operational manager for the Process Development Integration Laboratory. 'The advantage is you can make the wafer just as thin as you need it - 10 microns or less.' Most of today's solar cells are made out of wafer crystalline silicon, though thin-film cells made of more exotic elements such as copper, indium, gallium, arsenic, cadmium, tellurium and others are making a strong push into the market. The advantage of silicon is its abundance, because it is derived from sand. Silicon's disadvantage is that purifying it into wafers suitable for solar cells can be expensive and energy intensive. Manufacturers add carbon and heat to sand to produce metallurgical-grade silicon, which is useful in other industries, but not yet suitable for making solar cells. So this metallurgical-grade silicon is then converted to pure trichlorosilane (SiCl3) or silane (SiH4) gas. Typically, the purified gas is then converted to create a silicon feedstock at 1,000 degrees Celsius. This feedstock is melted at 1,414 C and recrystallized into crystal ingots that are finally sawed into wafers. The Ampulse method differs in that it eliminates the last two steps in the traditional process and works directly with the silane gas growing only the needed silicon right onto a foil substrate. A team of NREL scientists had developed a way to use a process called hot-wire chemical vapor deposition to thicken silicon wafers with near perfect crystal structure. Using a hot tungsten filament much like the one found in an incandescent light bulb, the silane gas molecules are broken apart and deposited onto the wafer using the chemical vapor deposition technique at about 700 C - a much lower temperature than needed to make the wafer. The hot filament dec

Scanlon, B.

2012-04-01T23:59:59.000Z

415

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a  

E-Print Network [OSTI]

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

Alam, Muhammad A.

416

FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE and X. Deng1,2  

E-Print Network [OSTI]

FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE SUBSTRATES A. Vijh1,2 , X. Yang1 , W of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous), and the effect of tie coats on film adhesion. INTRODUCTION Amorphous silicon (a-Si) based solar cells

Deng, Xunming

417

62 Journal of Student Research in Environmental Science at Appalachian Site Suitability Analysis for a Solar Farm  

E-Print Network [OSTI]

]. The semiconductor materials typically used are crystalline-silicone, containing monocrystalline or polycrystalline cells, or thin-film, containing materials including CdTe and copper indium gal- lium selenide, solar modules [2]. Although thin- film solar panels are typically less expensive than c-Si solar panels

Thaxton, Christopher S.

418

Solar Mapper  

Broader source: Energy.gov [DOE]

Interactive, online mapping tool providing access to spatial data related to siting utility-scale solar facilities in the southwestern United States.

419

Solar Rights  

Broader source: Energy.gov [DOE]

Maine law requires that any municipal ordinance, bylaw, or regulation adopted after September 30, 2009 regulating solar energy devices on residential property follow certain requirements. The rules...

420

Solar Energy.  

E-Print Network [OSTI]

??This thesis is about Photovoltaic (PV) cells and its stresses in various directions by calculating the power generated using solar cells under different conditions to… (more)

Bafana, Ramzi

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Solar Car  

SciTech Connect (OSTI)

Des Moines Central Academy Middle School students compete in the Solar Car Challenge at the National Science Bowl, May 2 in Washington D.C.

None

2010-01-01T23:59:59.000Z

422

Amorphous silicon photovoltaic devices  

DOE Patents [OSTI]

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

2004-08-31T23:59:59.000Z

423

Progress in passive solar energy systems. Volume 8. Part 1  

SciTech Connect (OSTI)

This book presents the papers given at a conference sponsored by the US DOE, the Solar Energy Research Institute, SolarVision, Inc., and the Southern California Solar Energy Society. The topics considered at the conference included sizing solar energy systems for agricultural applications, a farm scale ethanol production plant, the EEC wind energy RandD program, the passive solar performance assessment of an earth-sheltered house, the ARCO 1 MW photovoltaic power plant, the performance of a dendritic web photovoltaic module, second generation point focused concentrators, linear fresnel lens concentrating photovoltaic collectors, photovoltaic conversion efficiency, amorphous silicon thin film solar cells, a photovoltaic system for a shopping center, photovoltaic power generation for the utility industry, spectral solar radiation, and the analysis of insolation data.

Hayes, J.; Andrejko, D.A.

1983-01-01T23:59:59.000Z

424

Hybrid Silicon Evanescent Lasers John E. Bowersa  

E-Print Network [OSTI]

[2]. Finally a 110 nm thick n-doped InP spacer is used as a bonding interface to silicon. The silicon factors of the silicon waveguide and the QWs can be manipulated by the silicon waveguide dimensions silicon waveguide. For the fabricated waveguide dimensions of a 0.7 µm height (H) and 0.6 µm rib

Bowers, John

425

Process feasibility study in support of silicon material Task I. Final report, October 1, 1975-February 6, 1981  

SciTech Connect (OSTI)

The Low-Cost Solar Array (LSA) Project is directed toward effective cost reduction in the production of silicon for solar cells. Results are presented for process system properties, chemical engineering and economic analyses of the new technologies and processes being developed for the production of lower cost silicon for solar cells. Major physical, thermodynamic and transport property data are reported for the following silicon source and processing chemical materials: silane, silicon tetrachloride, trichlorosilane, dichlorosilane, silicon tetrafluoride, and silicon. The property data are reported for critical temperature, critical pressure, critical volume, vapor pressure, heat of vaporization, heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation and Gibb's free energy of formation. Chemical engineering analyses involving the preliminary process design of a plant (1000 MT/yr capacity) to produce silicon via the technology under consideration were accomplished for the following processes: UCC silane process for silicon, BCL process for silicon, conventional polysilicon process (Siemens technology), SiI/sub 4/ decomposition process, and DCS process (dichlorosilane).Major activities in chemical engineering analyses include base case conditions, reaction chemistry, process flowsheet, material balance, energy balance, property data, equipment design, major equipment list, production labor and forward for economic analysis. The process design package provides detailed data for raw materials, utilities, major process equipment and production labor requirements necessary for polysilicon production in each process. Using detailed data from the process design package, economic analyses for a 1000 MT/yr silicon plant were accomplished. Primary results from the economic analyses included plant capital investment and product cost. Results are presented and discussed. (WHK)

Yaws, C.L.; Li, K.Y.; Hopper, J.R.; Fang, C.S.; Hansen, K.C.

1981-02-06T23:59:59.000Z

426

Amorphous silicon radiation detectors  

DOE Patents [OSTI]

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

1992-01-01T23:59:59.000Z

427

Amorphous silicon radiation detectors  

DOE Patents [OSTI]

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

1992-11-17T23:59:59.000Z

428

Making silicon stronger.  

SciTech Connect (OSTI)

Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

Boyce, Brad Lee

2010-11-01T23:59:59.000Z

429

Diamond-silicon carbide composite  

DOE Patents [OSTI]

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Qian, Jiang; Zhao, Yusheng

2006-06-13T23:59:59.000Z

430

Modified silicon carbide whiskers  

DOE Patents [OSTI]

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Tiegs, T.N.; Lindemer, T.B.

1991-05-21T23:59:59.000Z

431

Modified silicon carbide whiskers  

DOE Patents [OSTI]

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

1991-01-01T23:59:59.000Z

432

Status and future of government-supported amorphous silicon research in the United States  

SciTech Connect (OSTI)

The Amorphous Silicon Research Project (ASRP) was established at the Solar Energy Research Institute in 1983 and is responsible for all US Department of Energy government supported research activities in the field of amorphous silicon photovoltaics. The objectives and research directions of the project have been established by a Five-Year Research Plan, which was developed at SERI in cooperation with the Department of Energy in 1984 and is divided into research on single-junction and multi-junction solar cells. DOE/SERI has recently initiated a new three year program to be performed in collaboration with US industry to perform work on high efficiency amorphous silicon solar cells and submodules. The objectives of this initiative are: (i) to achieve 18% efficiencies for small area multi-junction amorphous silicon cells, and (ii) to achieve amorphous silicon submodule efficiencies in the 10 to 13% range for single-junction and multi-junction submodule configurations over areas of at least 1000 cm/sup 2/.

Wallace, W.L.; Sabisky, E.S.

1986-06-01T23:59:59.000Z

433

Fabrication and properties of microporous silicon  

E-Print Network [OSTI]

Microporous silicon layers were fabricated by electrochemical etching of single crystalline silicon wafers in HF-ethanol solutions. The pore properties of porous silicon were examined by physical adsorption of nitrogen and the relationship between...

Shao, Jianzhong

1994-01-01T23:59:59.000Z

434

Enhanced efficiency of thin film solar cells using a shifted dual grating plasmonic structure  

E-Print Network [OSTI]

.5403) Plasmonics; (310.2790) Guided waves. References and links 1. O. Morton, "Solar energy: A new day dawning Society of America OCIS codes: (350.6050) Solar energy; (050.2770) Gratings; (310.0310) Thin films; (250? Silicon valley sunrise," Nature 443(7107), 19­22 (2006). 2. M. A. Green and S. Pillai, "Harnessing

Levy, Uriel

435

Solar Rights  

Broader source: Energy.gov [DOE]

Hawaii law prohibits the creation of any covenant or restriction contained in any document restricting the installation or use of a solar energy system on a residential dwelling or townhouse. ...

436

Multi-junction solar cell device  

DOE Patents [OSTI]

A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

Friedman, Daniel J. (Lakewood, CO); Geisz, John F. (Wheat Ridge, CO)

2007-12-18T23:59:59.000Z

437

HIGH QUALITY GERMANIUM PHOTODIODES ON SILICON SUBSTRATES USING AN INTERMEDIATE CHEMICAL MECHANICAL POLISHING STEP  

E-Print Network [OSTI]

HIGH QUALITY GERMANIUM PHOTODIODES ON SILICON SUBSTRATES USING AN INTERMEDIATE CHEMICAL MECHANICAL, MA 02139. ABSTRACT Germanium (Ge) photodiodes are capable of high quantum yields and can operate quality Ge/Si can be used to integrate GaAs/Ge solar cells, light emitting devices, and Ge photodiodes

438

Transition metal interaction and Ni-Fe-Cu-Si phases in silicon T. Buonassisi,b  

E-Print Network [OSTI]

precipitation may reduce the lattice mismatch compared to single-metal precipitates, rendering mixed-metal-silicide recombination activity of metal silicide clusters. Common solar cell materials are not contaminated with justTransition metal interaction and Ni-Fe-Cu-Si phases in silicon M. Heuer,a T. Buonassisi,b A. A

439

Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon  

E-Print Network [OSTI]

Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon KAI ZHU Solar, Toano, VA 23168 USA ABSTRACT We present infrared charge-modulation absorption spectra have been developing an infrared modulation spectroscopy technique that probes the optical spectra

Schiff, Eric A.

440

Texture analysis of silicon with an heterogeneous morphology used for the photovoltaic conversion by neutron diffraction  

E-Print Network [OSTI]

603 Texture analysis of silicon with an heterogeneous morphology used for the photovoltaic.10F - 61.14F 1. Introduction. In order to lower the production cost of solar cells, the Research perpendicularly to growth axis, which led to photovoltaic efficiency q ~ 11 % under AM1 conditions, starting

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Nanoscale Engineering Of Radiation Tolerant Silicon Carbide....  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering Of Radiation Tolerant Silicon Carbide. Nanoscale Engineering Of Radiation Tolerant Silicon Carbide. Abstract: Radiation tolerance is determined by how effectively the...

442

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

McCarthy, Anthony M. (Menlo Park, CA)

1998-06-02T23:59:59.000Z

443

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

McCarthy, A.M.

1996-01-30T23:59:59.000Z

444

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

McCarthy, Anthony M. (Menlo Park, CA)

1996-01-01T23:59:59.000Z

445

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

McCarthy, A.M.

1998-06-02T23:59:59.000Z

446

EELE408 Photovoltaics Lecture 11: Solar Cell Parameters  

E-Print Network [OSTI]

mV ­ Commercial silicon solar cells 500-600 mV 11 Power & IV Curve · Power (Watts) is the rate · The power output by a source is the product of the current supplied and the voltage at which the current was supplied 12 · Power output = Source voltage x Source current ­ P=V x I (Watts = Joules/second) = (Volts

Kaiser, Todd J.

447

Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals  

DOE Patents [OSTI]

Apparatus is provided for continuously forming a silicon crystal sheet from a silicon rod in a non-crucible environment. The rod is rotated and fed toward an RF coil in an inert atmosphere so that the upper end of the rod becomes molten and the silicon sheet crystal is pulled therefrom substantially horizontally in a continuous strip. A shorting ring may be provided around the rod to limit the heating to the upper end only. Argon gas can be used to create the inert atmosphere within a suitable closed chamber. By use of this apparatus and method, a substantially defect-free silicon crystal sheet is formed which can be used for micro-circuitry chips or solar cells.

Ciszek, T.F.

1984-09-12T23:59:59.000Z

448

Solar forecasting review  

E-Print Network [OSTI]

2.1.2 European Solar Radiation Atlas (ESRA)2.4 Evaluation of Solar Forecasting . . . . . . . . .2.4.1 Solar Variability . . . . . . . . . . . . .

Inman, Richard Headen

2012-01-01T23:59:59.000Z

449

Residential Solar Valuation Rates  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Residential Solar Valuation Rates Karl R. Rbago Rbago Energy LLC 1 The Ideal Residential Solar Tariff Fair to the utility and non-solar customers Fair compensation to...

450

CALIFORNIA SOLAR DATA MANUAL  

E-Print Network [OSTI]

for Daily Solar Radiation Data. Proceedings of the 1977from total horizontal radiation data, they both suffer froma. SOLAR RADIATION Solar radiation data provide a measure of

Berdahl, P.

2010-01-01T23:59:59.000Z

451

Solar powered desalination system  

E-Print Network [OSTI]

2008, uses concentrated solar power to split water. Figurethe main reason the potential for solar power is boundless.a clean energy source, solar power is inexhaustible, fairly

Mateo, Tiffany Alisa

2011-01-01T23:59:59.000Z

452

CALIFORNIA SOLAR DATA MANUAL  

E-Print Network [OSTI]

Solar Energy Laboratory 1303 Engineering Research Building UniversitySolar Energy Laboratory 1303 Engineering Research laboratory UniversitySolar Energy Group, Energy and Lawrence Berkeley Laboratory University

Berdahl, P.

2010-01-01T23:59:59.000Z

453

Nanocrystal Solar Cells  

E-Print Network [OSTI]

Nov, 2005). Chapter 4 Hybrid solar cells with 3-dimensionalinorganic nanocrystal solar cells 5.1 Introduction In recentoperation of organic based solar cells and distinguish them

Gur, Ilan

2006-01-01T23:59:59.000Z

454

CALIFORNIA SOLAR DATA MANUAL  

E-Print Network [OSTI]

room )I I( I I ,i I CALIFORNIA SOLAR DATA MANUAL I. ! I ienergy resource. The California Solar Data Manual describestowards fulfilling California's solar data needs is the

Berdahl, P.

2010-01-01T23:59:59.000Z

455

CALIFORNIA SOLAR DATA MANUAL  

E-Print Network [OSTI]

for Reno, Nevada . . . . . (Q) Solar Data for China Lake/using Nominal Solar Profiles China Lake/Inyokern ANGLE OFStations - China Lake, Edwards Monthly Latitude: Jan SOLAR

Berdahl, P.

2010-01-01T23:59:59.000Z

456

Solar forecasting review  

E-Print Network [OSTI]

Figure 6.3: Birds-eye view of solar array deployment siteBirds-eye 7. Birds-eye view of of solar solar array array

Inman, Richard Headen

2012-01-01T23:59:59.000Z

457

Solar Contractor Licensing  

Broader source: Energy.gov [DOE]

The California Contractors State License Board administers contractor licenses. The C-46 Solar Contractor license covers active solar water and space heating systems, solar pool heating systems,...

458

Solar forecasting review  

E-Print Network [OSTI]

2.1.2 European Solar Radiation Atlas (ESRA)for supplementing solar radiation network data,” FinalEstimating incident solar radiation at the surface from geo-

Inman, Richard Headen

2012-01-01T23:59:59.000Z

459

Solar Resource Assessment  

Broader source: Energy.gov [DOE]

DOE solar resource research focuses on understanding historical solar resource patterns and making future predictions, both of which are needed to support reliable power system operation. As solar...

460

Solar powered desalination system  

E-Print Network [OSTI]

As a clean energy source, solar power is inexhaustible,renewables for energy sources, including solar power. Also,Requirements Energy Source Natural Gas Nuclear Solar Wind

Mateo, Tiffany Alisa

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Photovoltaic Crystalline Silicon Cell Basics  

Broader source: Energy.gov [DOE]

To separate electrical charges, crystalline silicon cells must have a built-in electric field. Light shining on crystalline silicon may free electrons within the crystal lattice, but for these electrons to do useful work—such as provide electricity to a light bulb—they must be separated and directed into an electrical circuit.

462

Recent developments in silicon calorimetry  

SciTech Connect (OSTI)

We present a survey of some of the recent calorimeter applications of silicon detectors. The numerous attractive features of silicon detectors are summarized, with an emphasis on those aspects important to calorimetry. Several of the uses of this technology are summarized and referenced. We consider applications for electromagnetic calorimetry, hadronic calorimetry, and proposals for the SSC.

Brau, J.E.

1990-11-01T23:59:59.000Z

463

NATURE NANOTECHNOLOGY | VOL 9 | JANUARY 2014 | www.nature.com/naturenanotechnology 19 rystalline silicon (c-Si) is the most important semiconduc-  

E-Print Network [OSTI]

applications. As a result, around 90% of solar panels in use today are based on silicon. The optical properties present maturity. Together with its 1.1-eV bandgap -- optimal for capturing the solar spectrum using, highly integrated and low-cost devices. For photovoltaics applications, higher optoelectronic performance

464

.beta.-silicon carbide protective coating and method for fabricating same  

DOE Patents [OSTI]

A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or .mu.c-SiC film on the surface and produce .beta.--SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface.

Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA)

1994-01-01T23:59:59.000Z

465

[beta]-silicon carbide protective coating and method for fabricating same  

DOE Patents [OSTI]

A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating are disclosed. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or [mu]c-SiC film on the surface and produce [beta]-SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface. 3 figs.

Carey, P.G.; Thompson, J.B.

1994-11-01T23:59:59.000Z

466

Silicon nitride/silicon carbide composite densified materials prepared using composite powders  

DOE Patents [OSTI]

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

1997-07-01T23:59:59.000Z

467

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites  

DOE Patents [OSTI]

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

1999-01-01T23:59:59.000Z

468

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites  

DOE Patents [OSTI]

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

2002-01-01T23:59:59.000Z

469

Crystalline silicon growth in nickel/a-silicon bilayer  

SciTech Connect (OSTI)

The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 Degree-Sign C. Raman mapping shows that, 2 to 5 micron size crystalline silicon clusters are distributed over the entire surface of the sample. X-ray diffraction and X-ray absorption spectroscopy studies demonstrate silicon crystallizes over the metal silicide seeds and grow with the annealing temperature.

Mohiddon, Md Ahamad; Naidu, K. Lakshun [School of Physics, University of Hyderabad, Hyderabad-500046 (India) and Department of Physics, University of Trento, 38123 POVO (Trento) (Italy); Dalba, G. [Department of Physics, University of Trento, 38123 POVO (Trento) (Italy); Rocca, F. [IFN-CNR, Institute for Photonics and Nanotechnologies, Unit FBK-Photonics of Trento, 38123, Trento (Italy); Krishna, M. Ghanashyam [School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2013-02-05T23:59:59.000Z

470

Solar ADEPT: Efficient Solar Energy Systems  

SciTech Connect (OSTI)

Solar ADEPT Project: The 7 projects that make up ARPA-E's Solar ADEPT program, short for 'Solar Agile Delivery of Electrical Power Technology,' aim to improve the performance of photovoltaic (PV) solar energy systems, which convert the sun's rays into electricity. Solar ADEPT projects are integrating advanced electrical components into PV systems to make the process of converting solar energy to electricity more efficient.

None

2011-01-01T23:59:59.000Z

471

Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices  

E-Print Network [OSTI]

and Photovoltaic Performance . . . . . . . . . . . . . . .Amorphous Silicon as a Photovoltaic Material 2.1.2ii Photovoltaic Model . . . . . . . . . . .

Schriver, Maria Christine

2012-01-01T23:59:59.000Z

472

Silicon nitride ceramic comprising samaria and ytterbia  

DOE Patents [OSTI]

This invention relates to a sintered silicon nitride ceramic comprising samaria and ytterbia for enhanced toughness.

Yeckley, Russell L. (Oakham, MA)

1996-01-01T23:59:59.000Z

473

Concentrating Solar Power  

SciTech Connect (OSTI)

Summarizes the goals and activities of the DOE Solar Energy Technologies Program efforts within its concentrating solar power subprogram.

Not Available

2008-09-01T23:59:59.000Z

474

PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2006; 14:513531  

E-Print Network [OSTI]

be observed (metal silicide nanoprecipitates and metal-rich inclusions up to tens of microns in size Chemical Natures and Distributions of Metal Impurities in Multicrystalline Silicon Materials T. Buonassisi1, Norway We present a comprehensive summary of our observations of metal-rich particles in multicrystalline

475

Process for forming retrograde profiles in silicon  

DOE Patents [OSTI]

A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

1996-01-01T23:59:59.000Z

476

CUTTING SOLAR RED TAPECUTTING SOLAR RED TAPE Evergreen State Solar PartnershipEvergreen State Solar Partnership  

E-Print Network [OSTI]

CUTTING SOLAR RED TAPECUTTING SOLAR RED TAPE Evergreen State Solar PartnershipEvergreen State Solar Partnership Rooftop Solar Challenge 1 Sunshot #12;WASHINGTON PV CONTEXTWASHINGTON PV CONTEXT 285 cities, 39 Installations happen where process is easier #12;EVERGREEN STATE SOLAR PARTNERSHIP Commerce NWSEEDEdmonds

477

High temperature solar selective coatings  

DOE Patents [OSTI]

Improved solar collectors (40) comprising glass tubing (42) attached to bellows (44) by airtight seals (56) enclose solar absorber tubes (50) inside an annular evacuated space (54. The exterior surfaces of the solar absorber tubes (50) are coated with improved solar selective coatings {48} which provide higher absorbance, lower emittance and resistance to atmospheric oxidation at elevated temperatures. The coatings are multilayered structures comprising solar absorbent layers (26) applied to the meta surface of the absorber tubes (50), typically stainless steel, topped with antireflective Savers (28) comprising at least two layers 30, 32) of refractory metal or metalloid oxides (such as titania and silica) with substantially differing indices of refraction in adjacent layers. Optionally, at least one layer of a noble metal such as platinum can be included between some of the layers. The absorbent layers cars include cermet materials comprising particles of metal compounds is a matrix, which can contain oxides of refractory metals or metalloids such as silicon. Reflective layers within the coating layers can comprise refractory metal silicides and related compounds characterized by the formulas TiSi. Ti.sub.3SiC.sub.2, TiAlSi, TiAN and similar compounds for Zr and Hf. The titania can be characterized by the formulas TiO.sub.2, Ti.sub.3O.sub.5. TiOx or TiO.sub.xN.sub.1-x with x 0 to 1. The silica can be at least one of SiO.sub.2, SiO.sub.2x or SiO.sub.2xN.sub.1-x with x=0 to 1.

Kennedy, Cheryl E

2014-11-25T23:59:59.000Z

478

Silicone plesiotherapy molds  

SciTech Connect (OSTI)

Plesiotherapy, the treatment of superficial lesions by radioactive molds has largely been replaced by teletherapy techniques involving high energy photon and electron beams. There are, however, situations for which a short distance type treatment, in one form or another, is superior to any other presently available. Traditionally, molds have taken the form of rigid devices incorporating clamps to attach them to the patient. This ensures a reproducible geometry about a localized region since the molds are applied on a daily basis. To make such devices requires considerable skill and patience. This article describes an alternative method that eliminates the use of cumbersome devices in many situations. Silicone molds made from a plaster cast model have been found suitable for the treatment of surface lesions and especially for lesions in the oral and nasal cavities. With the use of radioactive gold seeds the molds may be left in place for a few days without fear of them moving.

Karolis, C.; Reay-Young, P.S.; Walsh, W.; Velautham, G.

1983-04-01T23:59:59.000Z

479

Supporting Information Light trapping in silicon nanowire solar cells  

E-Print Network [OSTI]

and 15 s 10:1 NH4F:HF dip and 800 nm Al followed by 200 nm Pd sputtered to form a top electrode finger

Yang, Peidong

480

Techniques of Nanoscale Silicon Texturing of Solar Cells - Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystallineForeign ObjectOUR8,Materials CharacterizationInnovation

Note: This page contains sample records for the topic "multicrystalline silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Thinner Film Silicon Solar Cells - Energy Innovation Portal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe1 MembersStability| EMSLforThin

482

GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation, search Equivalent URIFrontier,Jump to:Wilmette, ILFyreStorm IncGSanCIC

483

Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon Solar Cells: Preprint  

Office of Scientific and Technical Information (OSTI)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinan antagonist Journal Article: Crystal structureComposite--FORRemarksHEATING

484

NREL: Technology Transfer - The Quest for Inexpensive Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andData and ResourcesOther FederalNicheTechnology TransferThe Quest

485

NREL: Technology Transfer - The Quest for Inexpensive Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andData and ResourcesOther FederalNicheTechnology TransferThe

486

Japan Solar Silicon Co Ltd JSS | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's Heat JumpInc Place: EdenOverview Jump to:Jamestown, Colorado: Energy

487

Lithium Ion Battery Performance of Silicon Nanowires With Carbon...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ion Battery Performance of Silicon Nanowires With Carbon Skin . Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin . Abstract: Silicon (Si) nanomaterials have...

488

Rheology of silicon carbide/vinyl ester nanocomposites  

E-Print Network [OSTI]

New York, 1999. SILICON CARBIDE/VINYL ESTER NANOCOMPOSITESRheology of Silicon Carbide/Vinyl Ester NanocompositesABSTRACT: Silicon carbide (SiC) nanoparticles with no

Yong, Virginia; Hahn, H. Thomas

2006-01-01T23:59:59.000Z

489

Method of forming buried oxide layers in silicon  

DOE Patents [OSTI]

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir City, TN)

2000-01-01T23:59:59.000Z

490

Kerfless Silicon Precursor Wafer Formed by Rapid Solidification: October 2009 - March 2010  

SciTech Connect (OSTI)

1366 Direct Wafer technology is an ultra-low-cost, kerfless method of producing crystalline silicon wafers compatible with the existing dominant silicon PV supply chain. By doubling utilization of silicon and simplifying the wafering process and equipment, Direct Wafers will support drastic reductions in wafer cost and enable module manufacturing costs < $1/W. This Pre-Incubator subcontract enabled us to accelerate the critical advances necessary to commercialize the technology by 2012. Starting from a promising concept that was initially demonstrated using a model material, we built custom equipment necessary to validate the process in silicon, then developed sufficient understanding of the underlying physics to successfully fabricate wafers meeting target specifications. These wafers, 50 mm x 50 mm x 200 ..mu..m thick, were used to make prototype solar cells via standard industrial processes as the project final deliverable. The demonstrated 10% efficiency is already impressive when compared to most thin films, but still offers considerable room for improvement when compared to typical crystalline silicon solar cells.

Lorenz, A.

2011-06-01T23:59:59.000Z

491

SOLAR ENERGY FOR ACADEMIC INSTITUTIONS Solar Suitability Assessment  

E-Print Network [OSTI]

SOLAR ENERGY FOR ACADEMIC INSTITUTIONS Solar Suitability Assessment of Dalhousie University.................................................................................................. 2 2.2 Solar Radiation Data for Calculating Solar Energy Resource .................... 3 3 Campus.1 Evaluation of Suitability for Solar Energy Generation................................ 12 4.2 Solar

Brownstone, Rob

492

Process and apparatus for obtaining silicon from fluosilicic acid  

DOE Patents [OSTI]

Process for producing low cost, high purity solar grade Si wherein a reduction reaction, preferably the reduction of SiF.sub.4, by an alkali metal (Na preferred) is carried out inside a reaction chamber. The chamber wall and bottom surfaces are configured so as to facilitate the continuous separation of the products of reaction (Si and NaF) and removal of the molten salt by discharging the salt through one or more ports at the bottom of the reaction chamber. Such process is especially useful where it is desirable to discharge the reaction salt products from the reactor and retain silicon within the chamber for later removal.

Nanis, Leonard (Palo Alto, CA); Sanjurjo, Angel (San Jose, CA)

1988-05-31T23:59:59.000Z

493

Boston Massachusetts: Solar in Action (Brochure), Solar America...  

Broader source: Energy.gov (indexed) [DOE]

Solar America Cities, Energy Efficiency & Renewable Energy (EERE) San Francisco, California: Solar in Action (Brochure), Solar America Cities, Energy Efficiency &...

494

Solar Impulse's Solar-Powered Plane  

ScienceCinema (OSTI)

Solar Impulse lands in Washington, DC at Washington Dulles International Airport as part of its journey across the United States. Secretary Ernest Moniz speaks about how advancements like those at the Department of Energy are leading the way for innovations like the solar-powered plane. Footage of the solar-powered plane courtesy of Solar Impulse.

Moniz, Ernest; Piccard, Bertrand; Reicher, Dan

2014-01-07T23:59:59.000Z

495

Petrovay: Solar physics Helioseismology SOLAR OSCILLATIONS: INTRODUCTION  

E-Print Network [OSTI]

: Solar oscillations first observed by both Doppler and intensity method (Leighton, Noyes & Simon 1962: ApPetrovay: Solar physics Helioseismology SOLAR OSCILLATIONS: INTRODUCTION Small departures from hydrostatic equilibrium caused by ­ turbulent convection ­ localized events related to solar activity (e

Petrovay, Kristóf

496

Solar Impulse's Solar-Powered Plane  

SciTech Connect (OSTI)

Solar Impulse lands in Washington, DC at Washington Dulles International Airport as part of its journey across the United States. Secretary Ernest Moniz speaks about how advancements like those at the Department of Energy are leading the way for innovations like the solar-powered plane. Footage of the solar-powered plane courtesy of Solar Impulse.

Moniz, Ernest; Piccard, Bertrand; Reicher, Dan

2013-07-08T23:59:59.000Z

497

Mechanical Dissipation in Silicon Flexures  

E-Print Network [OSTI]

The thermo-mechanical properties of silicon make it of significant interest as a possible material for mirror substrates and suspension elements for future long-baseline gravitational wave detectors. The mechanical dissipation in 92um thick single-crystal silicon cantilevers has been observed over the temperature range 85 K to 300 K, with dissipation approaching levels down to phi = 4.4E-7.

S. Reid; G. Cagnoli; D. R. M. Crooks; J. Hough; P. Murray; S. Rowan; M. M. Fejer; R. Route; S. Zappe

2005-10-28T23:59:59.000Z

498

Berkeley, California: Solar in Action (Brochure), Solar America...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Berkeley, California: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Berkeley, California: Solar in Action (Brochure), Solar America...

499

China Glass Solar aka CG Solar formerly Weihai Bluestar Terra...  

Open Energy Info (EERE)

Solar aka CG Solar formerly Weihai Bluestar Terra Photovoltaic Co Ltd Jump to: navigation, search Name: China Glass Solar (aka CG Solar, formerly Weihai Bluestar Terra Photovoltaic...

500

Tucson, Arizona: Solar in Action (Brochure), Solar America Cities...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Tucson, Arizona: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Tucson, Arizona: Solar in Action (Brochure), Solar America Cities,...