Sample records for multicrystalline silicon solar

  1. Engineering Metal Impurities in Multicrystalline Silicon Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar...

  2. Texturization of multicrystalline silicon solar cells

    E-Print Network [OSTI]

    Li, Dai-Yin

    2010-01-01T23:59:59.000Z

    A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

  3. Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells

    E-Print Network [OSTI]

    Bertoni, Mariana I.

    In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating ...

  4. Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cells

    E-Print Network [OSTI]

    clusters in multicrystalline silicon mc-Si materials used for cost-effective solar cells. Two distinct silicon solar cells Tonio Buonassisia and Andrei A. Istratov Lawrence Berkeley National Laboratory, 1% of the worldwide solar cell market is based on multicrystalline silicon mc-Si .1 It is known that even minute

  5. Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation and rapid thermal annealing

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    695 Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation of terrestrial solar cells as compared to classical furnace or pulsed laser annealing. Unfortunately, drawbacks for the fabrication of solar cells. It offers the possibility of achieving strong reduction of cell cost in spite

  6. The effect of encapsulation on the reflectance of photovoltaic modules using textured multicrystalline-silicon solar cells

    SciTech Connect (OSTI)

    Gee, J.M.; Schubert, W.K.; Tardy, H.L.; Hund, T.D. [Sandia National Labs., Albuquerque, NM (United States); Robison, G. [Semiconductor Assembly Network, Prescott Valley, AZ (United States)

    1995-01-01T23:59:59.000Z

    Texturing multicrystalline-silicon cells is a promising technique for reducing reflectance losses. We investigated two methods for texturing multicrystalline-silicon solar cells - anisotropic chemical etch and mechanical dicing saw. Our work emphasized reducing reflectance in the encapsulated module by using optical confinement in the module. We found that optical confinement in the module is very important in the optimization of texture geometries.

  7. Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material

    E-Print Network [OSTI]

    Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material Tonio Buonassisia Applied Science and Technology Group, University and Lawrence Berkeley National Laboratory, Berkeley, California 94720 Received 23 September 2004; accepted 13

  8. Materials Science and Engineering B 134 (2006) 282286 Control of metal impurities in "dirty" multicrystalline silicon for solar cells

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    " multicrystalline silicon for solar cells A.A. Istratova,b,, T. Buonassisia,b,1, M.D. Picketta,b, M. Heuera,b, E processing of solar cells with satisfactory energy conversion efficiency based on inexpensive feedstock.V. All rights reserved. Keywords: Photovoltaics; Solar cells; Solar-grade silicon; Defect engineering

  9. The 22nd International Photovoltaic Science and Engineering Conference, November 05-09, 2012, Hangzhou, China Gettering of n-type multicrystalline silicon solar cells by

    E-Print Network [OSTI]

    , Hangzhou, China Gettering of n-type multicrystalline silicon solar cells by phosphorus diffusion, boron in heavily dislocated regions. 1. INTRODUCTION N-type multicrystalline silicon has great potential as solar+ diffused region in n- type silicon solar cells with either aluminum annealing or boron diffusion are good

  10. Dislocation density reduction in multicrystalline silicon through cyclic annealing

    E-Print Network [OSTI]

    Vogl, Michelle (Michelle Lynn)

    2011-01-01T23:59:59.000Z

    Multicrystalline silicon solar cells are an important renewable energy technology that have the potential to provide the world with much of its energy. While they are relatively inexpensive, their efficiency is limited by ...

  11. Low cost manufacturing of light trapping features on multi-crystalline silicon solar cells : jet etching method and cost analysis

    E-Print Network [OSTI]

    Berrada Sounni, Amine

    2010-01-01T23:59:59.000Z

    An experimental study was conducted in order to determine low cost methods to improve the light trapping ability of multi-crystalline solar cells. We focused our work on improving current wet etching methods to achieve the ...

  12. New Metallization Technique Suitable for 6-MW Pilot Production of Efficient Multicrystalline Solar Cells Using Upgraded Metallurgical Silicon: Final Technical Progress Report, December 17, 2007-- June 16, 2009

    Broader source: Energy.gov [DOE]

    This report describes CaliSolar's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. During this time, CaliSolar evolved from a handful of employees to over 100 scientists, engineers, technicians, and operators. On the technical side, the company transitioned from a proof-of-concept through pilot-scale to large-scale industrial production. A fully automated 60-megawatt manufacturing line was commissioned in Sunnyvale, California. The facility converts upgraded metallurgical-grade silicon feedstock to ingots, wafers, and high-efficiency multicrystalline solar cells.

  13. Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence

    E-Print Network [OSTI]

    ), Canberra, ACT 0200, Australia 2 State Key Laboratory of PV Science & Technology, Trina Solar Energy Limited in multicrystalline or so-called "cast monocrystalline" wafers. VC 2012 American Institute of Physics. [http it is convenient to texture monocrystalline silicon wafers with a (100) surface orientation through alkaline etch

  14. Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

    E-Print Network [OSTI]

    Ganapati, Vidya

    This manuscript concerns the application of infrared birefringence imaging (IBI) to quantify macroscopic and microscopic internal stresses in multicrystalline silicon (mc-Si) solar cell materials. We review progress to ...

  15. Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cell materials

    E-Print Network [OSTI]

    2004-01-01T23:59:59.000Z

    Solar Energy Materials & Solar Cells 72, 441 (2002). O. F.discussions about solar cells and defects in cast mc-Si;on Crystalline Silicon Solar Cell Materials and Processes (

  16. High-Efficiency 6?? Multicrystalline Black Solar Cells Based on Metal-Nanoparticle-Assisted Chemical Etching

    E-Print Network [OSTI]

    Hsu, W. Chuck

    2012-01-01T23:59:59.000Z

    Multicrystalline silicon (mc-Si) photovoltaic (PV) solar cells with nanoscale surface texturing by metal-nanoparticle-assisted etching are proposed to achieve high power efficiency. The investigation of average nanorod ...

  17. Preventing light-induced degradation in multicrystalline silicon

    SciTech Connect (OSTI)

    Lindroos, J., E-mail: jeanette.lindroos@aalto.fi; Boulfrad, Y.; Yli-Koski, M.; Savin, H. [Department of Micro and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo (Finland)

    2014-04-21T23:59:59.000Z

    Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.

  18. Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

    2012-06-01T23:59:59.000Z

    We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. We found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several ?m were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.

  19. Impact of surface roughness on the electrical parameters of industrial high efficiency NaOH-NaOCl textured multicrystalline silicon solar cell

    SciTech Connect (OSTI)

    Basu, P.K. [Department of Physics, Echelon Institute of Technology, Faridabad 121002, Haryana (India); Pujahari, R.M. [Department of Physics, Echelon Institute of Technology, Faridabad 121002, Haryana (India); Department of Physics, Manav Rachna International University, Faridabad 121001, Haryana (India); Kaur, Harpreet [Department of Physics, Manav Rachna International University, Faridabad 121001, Haryana (India); Department of Physics, Advanced Institute of Technology and Management, Palwal 121105, Haryana (India); Singh, Devi [Department of Physics, Manav Rachna International University, Faridabad 121001, Haryana (India); Varandani, D.; Mehta, B.R. [Department of Physics, Indian Institute of Technology, New Delhi 110016 (India)

    2010-09-15T23:59:59.000Z

    Sodium hydroxide (NaOH) and sodium hypochlorite (NaOCl) solution (1:1 ratio by volume) based texturization process at 80-82 C is an easy, low cost and comparatively new and convenient option for fabrication of any multicrystalline silicon (mC-Si) solar cell. In the present study atomic force microscope is used to observe the intragrain surface in a miniscule area (3 {mu}m x 3 {mu}m) of NaOH-NaOCl textured surface by two and three dimensional analysis, roughness analysis and section analysis. The r.m.s value of the surface parameter of 7.0 nm ascertains the smoothness of the textured surface and further the surface reflectivity is minimized to 4-6% in the 500-1000 nm wavelength range by a proper silicon nitride anti-reflection coating. Comparing with the standard HF-HNO{sub 3}-CH{sub 3}COOH acid textured cell, the NaOH-NaOCl textured cell shows a comparatively lower value of series resistance of 7.17 m{omega}, higher value of shunt resistance of 18.4 {omega} to yield a fill factor of 0.766 leading to more than 15% cell efficiency in the industrial cell processing line. This AFM study yields different surface roughness parameters for the NaOH-NaOCl textured wafers which can be used as a reference standard for optimized texturing. (author)

  20. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells Using AFM-Based Electrical Techniques with Nanometer Resolution: Preprint

    SciTech Connect (OSTI)

    Jiang, C. S.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.; Heath, J. T.

    2011-07-01T23:59:59.000Z

    Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

  1. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06T23:59:59.000Z

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  2. area multicrystalline silicon: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  3. Application of infrared birefringence imaging for measuring residual stress in multicrystalline, quasi-mono, dendritic web, and string ribbon silicon for solar cells

    E-Print Network [OSTI]

    Castellanos Rodríguez, Sergio

    2014-01-01T23:59:59.000Z

    One of the parameters with highest impact on photovoltaic module cost is manufacturing yield during solar cell production. Yield is, to a great extent, directly affected by the crystallization technique used to grow the ...

  4. Self Aligned Cell: Scaling Up Manufacture of a Cost Effective Cell Architecture for Multicrystalline Silicon Photovoltaics

    SciTech Connect (OSTI)

    Gabor, A.; van Mierlo, F.

    2010-12-01T23:59:59.000Z

    Two areas of technology for fabrication of higher efficiency Si-wafer solar cells were addressed: (1) the formation of structured texturing that is an improvement over the industry-standard isotexture process for multicrystalline wafers. (2) the formation of fine line (<50 micron) metallization seed layers in a self-aligned manner where the fingers can be automatically and perfectly lined up to a selective emitter and where expensive silver screen printing paste can be mostly replaced by plating up the seed layers with silver or copper. The benefits are: a) Lower reflectivity , b) Decoupling the performance of the texture from the saw damage, thus allowing for better advances in sawing and a more robust wet process. 1366 Technologies developed 2 pilot machines for 1) deposition and patterning of low-cost resist layers to enable simultaneous Honeycomb front texturing and groove formation for multicrystalline Si wafers, and 2) fine-line dispensing of materials that are self aligned to the grooves.

  5. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    SciTech Connect (OSTI)

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01T23:59:59.000Z

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  6. Sacrificial high-temperature phosphorus diffusion gettering for lifetime improvement of multicrystalline silicon wafers

    E-Print Network [OSTI]

    Scott, Stephanie Morgan

    2014-01-01T23:59:59.000Z

    Iron is among the most deleterious lifetime-limiting impurities in crystalline silicon solar cells. In as-grown material, iron is present in precipitates and in point defects. To achieve conversion efficiencies in excess ...

  7. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    SciTech Connect (OSTI)

    Antoniadis, H.

    2011-03-01T23:59:59.000Z

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  8. Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint

    SciTech Connect (OSTI)

    Yan, F.; Johnston, S.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

    2011-07-01T23:59:59.000Z

    Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

  9. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8, 2000Consumption SurveyEnergyphysicist DaveEngineeringEngineering Metal

  10. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  11. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  12. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  13. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8, 2000Consumption SurveyEnergyphysicistEngineering Metal Impurities

  14. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  15. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  16. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

    1997-01-01T23:59:59.000Z

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  17. NEW METHOD FOR GRAIN SIZE CHARACTERIZATION OF A MULTI-CRYSTALLINE SILICON INGOT

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    -crystalline Silicon (mc-Si) is the material with the largest market share in photovoltaic cells and mod- ules importance on the degradation of the electrical performance of the material, especially when these de- fects

  18. Laser wafering for silicon solar.

    SciTech Connect (OSTI)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01T23:59:59.000Z

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  19. Amorphous silicon/crystalline silicon heterojunctions: The future of high-efficiency silicon solar cells

    E-Print Network [OSTI]

    Firestone, Jeremy

    ;5 Record efficiencies #12;6 Diffused-junction solar cells Diffused-junction solar cell Chemical passivation to ~650 mV #12;7 Silicon heterojunction solar cells a-Si:H provides excellent passivation of c-Si surface Heterojunction solar cell Chemical passivation Chemical passivation #12;8 Voc and silicon heterojunction solar

  20. Advanced crystallization techniques of ''solar grade'' silicon

    SciTech Connect (OSTI)

    Gasparini, M.; Alessandri, M.; Calligarich, C.; Pizzini, S.; Rava, P.; Redaelli, F.; Sardi, L.

    1982-09-01T23:59:59.000Z

    Microstructural, electrical and photovoltaic characteristics of polycristalline silicon solar cells fabricated with silicon ingots containing 5, 100 and 500 ppmw iron are reported and discussed. All silicon ingots were grown by the directional solidification technique in graphite or special quartz molds and doped intentionally with iron, in order to evaluate the potentiality of the D.S. technique when employed with solar silicon feedstocks. Results indicate that structural breakdown limits the amount of the ingot which is usable for solar cells fabrication, but also that efficiencies in excess of 10% are obtained using the ''good'' region of the ingot.

  1. Accurate performance measurement of silicon solar cells

    E-Print Network [OSTI]

    accuracy. The light source is very important when calibrating solar cells. Commonly used light sourcesAccurate performance measurement of silicon solar cells William Murray Keogh July 2001 A thesis is an important part of the solar cell manufacturing process. Two classes of measurement can be considered

  2. Fabricating solar cells with silicon nanoparticles

    DOE Patents [OSTI]

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02T23:59:59.000Z

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  3. Present status and future prospects of electro-magnetic casting for silicon solar cells

    SciTech Connect (OSTI)

    Kaneko, Kyojiro; Kawamura, Ritsuo; Misawa, Teruoki [Sumitomo SiTiX Corp., Amagasaki, Hyogo (Japan). Research and Development Center

    1994-12-31T23:59:59.000Z

    The development research of Electro-Magnetic Casting (EMC) for silicon crystal manufacturing technology has been carried out for years with the purpose of providing low cost multicrystalline silicon substrate for solar cells. The EMC technology is a new concept, in which electromagnetic force is utilized to suspend molten metal without contact to crucible wall for melting and solidification of silicon material. At present, the research has been carried out for the development of casting technique with an ingot size of 22 x 22 cm{sup 2} cross section, and the furnace construction for producing a 35 x 35 cm{sup 2} cross sectioned ingot has been begun. Solar cell conversion efficiencies using EMC ingot crystals are ranging from 13--14% at the present, and the quality of EMC material reaches within that of conventional mold casting material. By the improvements of higher casting speed, higher material quality and larger ingot size at the EMC technology, it is expected that a new casting technique for lower cost ingot production will be realized. The paper describes the features of EMC technology, the silicon EMC furnace, crystalline properties of EMC ingots, electric power consumption of EMC, and cost comparison of the EMC and Czychralski pulling methods.

  4. Arrays of ultrathin silicon solar microcells

    DOE Patents [OSTI]

    Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

    2014-03-25T23:59:59.000Z

    Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

  5. Manufacture of silicon carbide using solar energy

    DOE Patents [OSTI]

    Glatzmaier, Gregory C. (Boulder, CO)

    1992-01-01T23:59:59.000Z

    A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  6. Compensated amorphous-silicon solar cell

    DOE Patents [OSTI]

    Devaud, G.

    1982-06-21T23:59:59.000Z

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

  7. Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells Xunming Deng and Eric A. Schiff Table of Contents 1 Overview 3 1.1 Amorphous Silicon: The First Bipolar Amorphous Semiconductor 3 1.2 Designs for Amorphous Silicon Solar Cells: A Guided Tour 6

  8. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, J.L.

    1996-07-23T23:59:59.000Z

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  9. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA)

    1996-01-01T23:59:59.000Z

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  10. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  11. GCL Solar Energy Technology Holdings formerly GCL Silicon aka...

    Open Energy Info (EERE)

    GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name: GCL Solar Energy Technology Holdings (formerly GCL...

  12. 2008 Solar Technologies Market Report

    E-Print Network [OSTI]

    Price, S.

    2010-01-01T23:59:59.000Z

    PV, includes monocrystalline and multicrystalline PV cells,PV cell/module shipments (GW) Amorphous Silicon Ribbon Silicon MonocrystallinePV modules ranged from 13.5% for multicrystalline modules to 17.5% for high-efficiency monocrystalline

  13. Metal electrode for amorphous silicon solar cells

    DOE Patents [OSTI]

    Williams, Richard (Princeton, NJ)

    1983-01-01T23:59:59.000Z

    An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

  14. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1982-12-28T23:59:59.000Z

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  15. Efficiency of silicon solar cells containing chromium

    DOE Patents [OSTI]

    Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

    1982-01-01T23:59:59.000Z

    Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

  16. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1995-01-01T23:59:59.000Z

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

  17. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, T.F.

    1995-03-28T23:59:59.000Z

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

  18. Investigating the efficiency of Silicon Solar cells at

    E-Print Network [OSTI]

    Attari, Shahzeen Z.

    Investigating the efficiency of Silicon Solar cells at different temperatures and wavelengths to study the characteristics of silicon photovoltaic cells (solar cells). We vary the wavelength of light as well as the temperature of the solar cell to investigate how the open voltage across the cell varies

  19. Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells

    E-Print Network [OSTI]

    Mailoa, Jonathan P

    2012-01-01T23:59:59.000Z

    Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

  20. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    E-Print Network [OSTI]

    Mailoa, Jonathan P.

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband ...

  1. Amorphous silicon passivated contacts for diffused junction silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J., E-mail: james.bullock@anu.edu.au; Yan, D.; Wan, Y.; Cuevas, A. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [École Polytechnique Fédérale de Lausanne (EPFL), Institute of micro engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory, Maladière 71, CH-200 Neuchâtel (Switzerland)

    2014-04-28T23:59:59.000Z

    Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

  2. High temperature investigations of crystalline silicon solar cell materials

    E-Print Network [OSTI]

    Hudelson, George David Stephen, III

    2009-01-01T23:59:59.000Z

    Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

  3. Performance of Ultrathin Silicon Solar Microcells with Nanostructures of Relief

    E-Print Network [OSTI]

    Rogers, John A.

    of the materials. Solar cells based on thin films of amorphous or polycrystalline silicon require sub- stantially, Urbana, Illinois 61801 ABSTRACT Recently developed classes of monocrystalline silicon solar microcells systems that benefit from thin construction and efficient materials utilization. KEYWORDS Nanoimprint

  4. Electrical overstress failure in silicon solar cells

    SciTech Connect (OSTI)

    Pease, R.L.; Barnum, J.R.; van Lint, V.A.J.; Vulliet, W.V.; Wrobel, T.F.

    1982-11-01T23:59:59.000Z

    A solar-cell electrical-overstress-failure model and the results of experimental measurements of threshold pulsed failure currents on four types of silicon solar cells are presented. The transient EMP field surrounding a lightning stroke has been identified as a potential threat to a photovoltaic array, yet failure analysis of solar cells in a pulsed environment had not previously been reported. Failure in the low-resistivity concentrator cells at pulse widths between 1 ..mu..s and 1 ms occurred initially in the junction. Finger damage in the form of silver melting occurs at currents only slightly greater than that required for junction damage. The result of reverse-bias transient-overstress tests on high-resistivity (10 ..cap omega..cm) cells demonstrated that the predominant failure mode was due to edge currents. These flat-plate cells failed at currents of only 4 to 20 A, which is one or two orders of magnitude below the model predictions. It thus appears that high-resistivity flat-plate cells are quite vulnerable to electrical overstress which could be produced by a variety of mechanisms.

  5. EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques

    E-Print Network [OSTI]

    Kaiser, Todd J.

    ;3 Screen Printed Solar Cells · Firing the contacts ­ The furnace heats the cell to a high temperature by Efficiency 22 Rear Panel before Lamination 23 Buried Contact Solar Cells · High Efficiency · Laser groved1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser

  6. Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,

    E-Print Network [OSTI]

    Cui, Yi

    ABSTRACT: Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices solar cell. Additionally, about 26% of the module cost comes from the fabrication processes of a SiHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

  7. Solar cell structure incorporating a novel single crystal silicon material

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1983-01-01T23:59:59.000Z

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  8. CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION

    E-Print Network [OSTI]

    . An industrial exploitation of these properties for solar cell production currently lacks of a cost effectiveCRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer

  9. Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA)

    1982-01-01T23:59:59.000Z

    An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

  10. Geometry control of recrystallized silicon wafers for solar applications

    E-Print Network [OSTI]

    Ruggiero, Christopher W

    2009-01-01T23:59:59.000Z

    The cost of manufacturing crystalline silicon wafers for use in solar cells can be reduced by eliminating the waste streams caused by sawing ingots into individual wafers. Professor Emanuel Sachs has developed a new method ...

  11. Simulation of iron impurity gettering in crystalline silicon solar cells

    E-Print Network [OSTI]

    Powell, Douglas M. (Douglas Michael)

    2012-01-01T23:59:59.000Z

    This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also ...

  12. CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS Yongling Ren, Natalita M Nursam, Da Wang and Klaus J Weber Centre for Sustainable Energy Systems, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 0200, Australia ABSTRACT

  13. NREL Develops ZnSiP2 for Silicon-Based Tandem Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-08-01T23:59:59.000Z

    Combining an Earth-abundant chalcopyrite with a silicon layer could significantly boost conversion efficiency above that of single-junction silicon solar cells.

  14. Copper doped polycrystalline silicon solar cell

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

    1981-01-01T23:59:59.000Z

    Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

  15. Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells

    E-Print Network [OSTI]

    Schiff, Eric A.

    Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells Kai Zhu a,1 , E Solar, Toano, VA 23168, USA Abstract We report infrared depletion modulation spectra for near an infrared modulation spectroscopy technique that probes the optical spectra of dopants and defects

  16. Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demsy and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demésy and Sajeev://jap.aip.org/about/rights_and_permissions #12;Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demesya

  17. Solar power conversion efficiency in modulated silicon nanowire photonic Alexei Deinega and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinega://jap.aip.org/about/rights_and_permissions #12;Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinegaa that using only 1 lm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power

  18. Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    a significant part of silicon solar cell cost. Thin film technology is a promising way to avoid these costCoupled optical and electrical modeling of solar cell based on conical pore silicon photonic://jap.aip.org/authors #12;Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic

  19. Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells

    E-Print Network [OSTI]

    Atwater, Harry

    Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells Michael D. Kelzenberg, Daniel B-voltage measurements were made under simulated Air Mass 1.5 global illumination. Photovoltaic spectral response work by our group has shown that macroscopic Si wire arrays (>1 cm2 in area) suitable for photovoltaic

  20. NREL Success Stories - Quest for Inexpensive Silicon Solar Cells

    ScienceCinema (OSTI)

    Branz, Howard

    2013-05-29T23:59:59.000Z

    Scientists at the National Renewable Energy Laboratory (NREL) share their story about a successful partnership with Oak Ridge National Laboratory and the Ampulse Corporation and how support from the US Department of Energy's Technology Commercialization & Deployment Fund has helped it and their silicon solar cell research thrive.

  1. Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells photovoltaic solar cell. Optical simulations performed on a complete solar cell revealed that patterning to obtain ultrathin patterned solar cells. Keywords: Photonic crystals; Epitaxial crystalline silicon; Thin

  2. The analysis and optimization of a spherical silicon solar cell

    E-Print Network [OSTI]

    McKee, William Randall

    1976-01-01T23:59:59.000Z

    silicon solar cell has been estimated using a cylindrical solar cell with some modifications as an approximate model. Calculations were made for both the cylindrical model and the conventional planar cell with the aid of a Fortran IV computer program... ln the p nnd n layers, respect lvely (cm I) N(X) monochromatic photon flux incident on the solar cell (cm g sec ~ o ) N 0 number of photons/cm sec with wavelengths shorter than l. lp (cm sec ) n po' no thermal equilibrium concentration...

  3. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1984-03-13T23:59:59.000Z

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  4. Enabling Thin Silicon Solar Cell Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    effort to shift U.S. energy reliance from fossil fuels to renewable sources has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics...

  5. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, Ajeet (Marietta, GA); Chen, Zhizhang (Duluth, GA); Doshi, Parag (Atlanta, GA)

    1996-01-01T23:59:59.000Z

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

  6. Silicon Ink for High-Efficiency Solar Cells Captures a Share of the Market (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-08-01T23:59:59.000Z

    Fact sheet on 2011 R&D 100 Award winner Silicon Ink. Liquid silicon has arrived, and with it comes a power boost for solar cells and dramatic cost savings for cell manufacturers.

  7. Silicon epitaxy below 200C: Towards thin crystalline solar cells R. Carioua,b

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Silicon epitaxy below 200°C: Towards thin crystalline solar cells R. Carioua,b , R. Ruggeria,c , P spectroscopic ellipsometry and HRTEM measurements. Moreover, we build heterojunction solar cells with intrinsic of current devices. KEYWORDS Silicon epitaxy, RF-PECVD, low temperature, thin crystalline solar cells

  8. Conventional and 360 degree electron tomography of a micro-crystalline silicon solar cell

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    for use as the active absorber layer in low cost solar cells [1], for which efficiencies higher than 8Conventional and 360 degree electron tomography of a micro- crystalline silicon solar cell M thereafter) in micro-crystalline silicon (µc-Si:H) solar cell. The limitations of inferring the 3D geometry

  9. Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Kelsey A. Whitesell*a

    E-Print Network [OSTI]

    Atwater, Harry

    Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Crystals Kelsey A. Whitesell to enhance performance of thin film solar cells because of their unique ability to control light. We show crystalline silicon solar cells of up to 205% from = 300nm to 1100nm compared to a planar cell

  10. Extended light scattering model incorporating coherence for thin-film silicon solar cells

    E-Print Network [OSTI]

    Lenstra, Arjen K.

    Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non efficiency spectra of state-of-the-art microcrystalline silicon solar cells. The simulations agree very well

  11. Preprint 24th EU PVSEC, 2009, Hamburg FITTING OF LATERAL RESISTANCES IN SILICON SOLAR CELLS

    E-Print Network [OSTI]

    Junk, Michael

    Preprint 24th EU PVSEC, 2009, Hamburg FITTING OF LATERAL RESISTANCES IN SILICON SOLAR CELLS cell from electroluminescence (EL) is introduced. A two-dimensional model of the solar cell screen printed monocrystalline silicon solar cell are shown and the influence of lateral diffusion

  12. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    SciTech Connect (OSTI)

    Maruska, P. [Spire Corp., Bedford, MA (United States)] [Spire Corp., Bedford, MA (United States)

    1996-09-01T23:59:59.000Z

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  13. Novel buried contact technology for advanced silicon solar cells

    SciTech Connect (OSTI)

    Ni Dheasuna, C.; Mathewson, A.; Hecking, L.; Wrixon, G.T. [National Microelectronics Research Centre, Cork (Ireland)

    1994-12-31T23:59:59.000Z

    Increased efficiency of silicon solar cells has resulted in the increased complexity and cost of manufacture. Optical properties can be enhanced by increasing the optical path length, while minimizing both bulk and surface recombination. Conventional silicon based solar cells are fabricated by a series of physical or chemical vapor deposition processes followed by photolithography and etching processes for each layer. These repeated deposition and etching cycles are not only difficult to perform but they also generate severe surface topography. This topography is a major cause of yield loss and reliability problems for advanced solar cells. These problems are especially severe for high aspect ratio contact holes. An alternative method of performing this metallization inexpensively and reliably is by the use of electroless plating. As the plating process occurs selectively on Si and not on the surface passivation layer, thick metal films (Ni and Cu) can be deposited which depend entirely upon the depth of the trench used. The advantages of electroless plating as an alternative to standard metallization will be presented.

  14. Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells

    E-Print Network [OSTI]

    Anantaram, M. P.

    Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells M. Golam Work function Lifetime Diffusion length Interdigitated solar cell a b s t r a c t We study solar cell nanowires and nanotubes are considered to be potential candidates for low cost and high efficiency solar

  15. Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,,

    E-Print Network [OSTI]

    Javey, Ali

    Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,, Xingtian Yin,,,§, Maxwell Laboratory, Xi'an Jiaotong University, Xi'an, 710049 Shaanxi, People's Republic of China Joint Center/silicon solar cell with a power conversion efficiency of 14.3%. While MoOx is commonly considered

  16. 15.7% Efficient 10-?m-Thick Crystalline Silicon Solar Cells Using Periodic Nanostructures

    E-Print Network [OSTI]

    Branham, Matthew Sanders

    Only ten micrometer thick crystalline silicon solar cells deliver a short-circuit current of 34.5 mA cm[superscript ?2] and power conversion efficiency of 15.7%. The record performance for a crystalline silicon solar cell ...

  17. Laser micro-processing of silicon using nanosecond pulse shaped fibre laser at 1 ?m wavelength

    E-Print Network [OSTI]

    Li, Kun

    2012-06-12T23:59:59.000Z

    ). ............................................................................... 11 Figure 2.2(a): Schematic and (b) SEM image of 19.8% efficient multicrystalline silicon solar cell with “honeycomb” surface texturing (Zhao, Wang et al. 1998). (c) The “inverted pyramid” texture on the top surface (Zhao, Wang et al. 1995). (d) A... is 40 µm (Tan 2006). (c): SEM image of silicon machined by frequency tripled Nd: YAG laser (355 nm) followed by cleaning in the KOH solution (Chen and Darling 2005). (d) Profiles and SEM images (×1.5 k) of ablated a-Si under different irradiation...

  18. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, Ajeet (Marietta, GA); Doshi, Parag (Altanta, GA); Tate, John Keith (Lawrenceville, GA); Mejia, Jose (Atlanta, GA); Chen, Zhizhang (Duluth, GA)

    1998-06-16T23:59:59.000Z

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure.

  19. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

    1998-06-16T23:59:59.000Z

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

  20. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    Monocrystalline silicon solar cells, polycrystalline silicon solar cells, and amorphous silicon (thin-film) solar

  1. Thermodynamic limits of nanophotonic light trapping in thin film silicon solar cells1

    E-Print Network [OSTI]

    Schiff, Eric A.

    with solar tracking may realize the predicted JSC improvement. PACS Nos.: 88.40.jj, 42.79.Dj, 88.05.De to a significant improvement in light-trapping for cells used with solar trackingARTICLE Thermodynamic limits of nanophotonic light trapping in thin film silicon solar cells1 Brian

  2. Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Ris National Laboratory, DK-4000

    E-Print Network [OSTI]

    1 Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Risø National Laboratory, DK of utilising solar energy, but this direct energy transfer does not involve the elements of focusing solar energy in a way that is economically competitive, also in regions where other energy sources

  3. Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell

    E-Print Network [OSTI]

    to bring down the cost of photovoltaic (PV) solar cells has gained huge momentum, and many strategiesOptimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic

  4. c e n t r e t Solar Cells Beyond Silicon

    E-Print Network [OSTI]

    1 POLYMER c e n t r e t Solar Cells Beyond Silicon Keld West The Danish Polymer Centre Risø National Laboratory #12;Risø Int. Energy Conference, May 2003 2 POLYMER c e n t r e t Solar Energy · Energy Int. Energy Conference, May 2003 3 POLYMER c e n t r e t Solar Energy, Perspective · The earth

  5. Metal catalyst technique for texturing silicon solar cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Zaidi, Saleem H. (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.

  6. amorphous silicon solar: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 26 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  7. The effects of concentrated ultraviolet light on high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    Ruby, D.S.; Schubert, W.K.

    1991-01-01T23:59:59.000Z

    The importance of stability in the performance of solar cells is clearly recognized as fundamental. Some of the highest efficiency silicon solar cells demonstrated to date, such as the Point Contact solar cell and the Passivated Emitter solar cell, rely upon the passivation of cell surfaces in order to minimize recombination, which reduces cell power output. Recently, it has been shown that exposure to ultraviolet (UV) light of wavelengths present in the terrestrial solar spectrum can damage a passivating silicon-oxide interface and increase recombination. In this study, we compared the performance of Point Contact and Passivated Emitter solar cells after exposure to UV light. We also examined the effect of UV exposure on oxide-passivated silicon wafers. We found that current Passivated Emitter designs are stable at both one-sun and under concentrated sunlight. The evolution of Point Contact concentrator cell performance shows a clear trend towards more stable cells. 15 refs., 18 figs.

  8. Solar Grade Silicon from Agricultural By-products

    SciTech Connect (OSTI)

    Richard M. Laine

    2012-08-20T23:59:59.000Z

    In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it starts one step upstream from all other Sipv production efforts. Our process starts by producing high purity SiO2/C feedstocks from which Sipv can be produced in a single, chlorine free, final EAF step. Specifically, our unique technology, and the resultant SiO2/C product can serve as high purity feedstocks to existing metallurgical silicon (Simet) producers, allowing them to generate Sipv with existing US manufacturing infrastructure, reducing the overall capital and commissioning schedule. Our low energy, low CAPEX and OPEX process purifies the silica and carbon present in rice hull ash (RHA) at low temperatures (< 200C) to produce high purity (5-6 Ns) feedstock for production of Sipv using furnaces similar to those used to produce Simet. During the course of this project we partnered with Wadham Energy LP (Wadham), who burns 220k ton of rice hulls (RH)/yr generating 200 GWh of electricity/yr and >30k ton/yr RHA. The power generation step produces much more energy (42 kWh/kg of final silicon produced) than required to purify the RHA (5 kWh/kg of Sipv, compared to 65 kWh/kg noted above. Biogenic silica offers three very important foundations for producing high purity silicon. First, wastes from silica accumulating plants, such as rice, corn, many grasses, algae and grains, contain very reactive, amorphous silica from which impurities are easily removed. Second, plants take up only a limited set of, and minimal quantities of the heavy metals present in nature, meaning fewer minerals must be removed. Third, biomass combustion generates a product with intrinsic residual carbon, mixed at nanometer length scales with the SiO2. RHA is 80-90 wt% high surface area (20 m2/g), amorphous SiO2 with some simple mineral content mixed intimately with 5-15 wt% carbon. The mineral content is easily removed by low cost, acid washes using Mayaterials IP, leading to purified rice hull ash (RHAclean) at up to 6N purity. This highly reactive silica is partially extracted from RHAclean at 200 C in an environmentally benign process to adjust SiO2:C ratios to those needed in EA

  9. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01T23:59:59.000Z

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more »between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

  10. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01T23:59:59.000Z

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.

  11. Optimized scalable stack of fluorescent solar concentrator systems with bifacial silicon solar cells

    SciTech Connect (OSTI)

    Martínez Díez, Ana Luisa, E-mail: a.martinez@itma.es [Fundación ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avilés (Spain); Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Gutmann, Johannes; Posdziech, Janina; Rist, Tim; Goldschmidt, Jan Christoph [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Plaza, David Gómez [Fundación ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avilés (Spain)

    2014-10-21T23:59:59.000Z

    In this paper, we present a concentrator system based on a stack of fluorescent concentrators (FCs) and a bifacial solar cell. Coupling bifacial solar cells to a stack of FCs increases the performance of the system and preserves its efficiency when scaled. We used an approach to optimize a fluorescent solar concentrator system design based on a stack of multiple fluorescent concentrators (FC). Seven individual fluorescent collectors (20 mm×20 mm×2 mm) were realized by in-situ polymerization and optically characterized in regard to their ability to guide light to the edges. Then, an optimization procedure based on the experimental data of the individual FCs was carried out to determine the stack configuration that maximizes the total number of photons leaving edges. Finally, two fluorescent concentrator systems were realized by attaching bifacial silicon solar cells to the optimized FC stacks: a conventional system, where FC were attached to one side of the solar cell as a reference, and the proposed bifacial configuration. It was found that for the same overall FC area, the bifacial configuration increases the short-circuit current by a factor of 2.2, which is also in agreement with theoretical considerations.

  12. Co-optimizing silicon solar cell processing for efficiency and throughput

    E-Print Network [OSTI]

    Morishige, Ashley E. (Ashley Elizabeth)

    2013-01-01T23:59:59.000Z

    Crystalline silicon solar cells are a proven renewable energy technology, but they have yet to reach low costs commensurate with subsidy-free, grid-scale adoption. To achieve the widespread adoption of photovoltaics, the ...

  13. Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modeling

    E-Print Network [OSTI]

    Fenning, David P.

    The evolution during silicon solar cell processing of performance-limiting iron impurities is investigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrial phosphorus diffusion, bulk ...

  14. Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs...

    Broader source: Energy.gov (indexed) [DOE]

    This is particularly evident in the solar world. Refining the raw material used in photovoltaic panels, silicon, is not a cheap endeavor, and has kept the price of panels more...

  15. Efficient Light Trapping in Inverted Nanopyramid Thin Crystalline Silicon Membranes for Solar Cell Applications

    E-Print Network [OSTI]

    Mavrokefalos, Anastassios

    Thin-film crystalline silicon (c-Si) solar cells with light-trapping structures can enhance light absorption within the semiconductor absorber layer and reduce material usage. Here we demonstrate that an inverted nanopyramid ...

  16. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor-and solar-

    E-Print Network [OSTI]

    Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor- and solar- grade silicon) produced in the United States in 2009 was $470 million. Four companies produced silicon materials in six plants. Of those companies, three produced ferrosilicon in four plants. Metallurgical

  17. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J., E-mail: james.bullock@anu.edu.au; Cuevas, A.; Yan, D. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Micro Engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory PVLab, Maladière 71b, CH-200 Neuchâtel (Switzerland)

    2014-10-28T23:59:59.000Z

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ?1.55?nm, achieve the best carrier-selectivity producing a contact resistivity ?{sub c} of ?3 m? cm{sup 2} and a recombination current density J{sub 0c} of ?40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350?°C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  18. 19.4% -EFFICIENT LARGE AREA REAR-PASSIVATED SCREEN-PRINTED SILICON SOLAR CELLS T. Dullweber*1

    E-Print Network [OSTI]

    be reduced by applying the PERC (passivated emitter and rear cell) solar cell design [8]. The following19.4% -EFFICIENT LARGE AREA REAR-PASSIVATED SCREEN-PRINTED SILICON SOLAR CELLS T. Dullweber*1 , S% in the near future. Keywords: Silicon Solar Cell, Screen Printing, Rear Passivation 1 Introduction About 80

  19. Hydrogenated Nanocrystalline Silicon p-Layer in a-Si:H n-i-p Solar Cells Wenhui Dua)

    E-Print Network [OSTI]

    Deng, Xunming

    Hydrogenated Nanocrystalline Silicon p-Layer in a-Si:H n-i-p Solar Cells Wenhui Dua) , Xianbo Liaob hydrogenated amorphous silicon (a-Si:H) solar cells. Raman scattering spectroscopy and transmission electron). Using this kind of p-layer in n-i-p a-Si:H solar cells, the cell performances were improved with a Voc

  20. FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS

    E-Print Network [OSTI]

    Deng, Xunming

    FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS of Michigan, Ann Arbor, MI 48109, USA ABSTRACT Hydrogenated amorphous silicon (a-Si:H) single- junction solar). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains

  1. Defect Engineering, Cell Processing, and Modeling for High-Performance, Low-Cost Crystalline Silicon Photovoltaics

    SciTech Connect (OSTI)

    Buonassisi, Tonio

    2013-02-26T23:59:59.000Z

    The objective of this project is to close the efficiency gap between industrial multicrystalline silicon (mc-Si) and monocrystalline silicon solar cells, while preserving the economic advantage of low-cost, high-volume substrates inherent to mc-Si. Over the course of this project, we made significant progress toward this goal, as evidenced by the evolution in solar-cell efficiencies. While most of the benefits of university projects are diffuse in nature, several unique contributions can be traced to this project, including the development of novel characterization methods, defect-simulation tools, and novel solar-cell processing approaches mitigate the effects of iron impurities ("Impurities to Efficiency" simulator) and dislocations. In collaboration with our industrial partners, this project contributed to the development of cell processing recipes, specialty materials, and equipment that increased cell efficiencies overall (not just multicrystalline silicon). Additionally, several students and postdocs who were either partially or fully engaged in this project (as evidenced by the publication record) are currently in the PV industry, with others to follow.

  2. Comparison of electronic structure of as grown and solar grade silicon samples

    SciTech Connect (OSTI)

    Saravanan, R., E-mail: saragow@dataone.in; Sheeba, R. A. J. R. [Madura College, Research Centre and PG Department of Physics (India)

    2012-04-15T23:59:59.000Z

    A comparison of the electronic structure of two different types of silicon materials viz., (i) as grown silicon and (ii) solar silicon has been carried out utilizing maximum entropy method and pair distribution function using powder X-ray data sets. The precise electron density maps have been elucidated for the two samples. The covalent nature of the bonding between atoms in both the samples is found to be well pronounced and clearly seen from the electron density maps. The electron densities at the middle of the Si-Si bond are found to be 0.47 and 0.45 e/A{sup 3} for as grown silicon and solar silicon respectively. In this work, the local structural information has also been obtained by analyzing the atomic pair distribution functions of these two samples.

  3. Amorphous silicon cell array powered solar tracking apparatus

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1985-01-01T23:59:59.000Z

    An array of an even number of amorphous silicon solar cells are serially connected between first and second terminals of opposite polarity. The terminals are connected to one input terminal of a DC motor whose other input terminal is connected to the mid-cell of the serial array. Vane elements are adjacent the end cells to selectively shadow one or the other of the end cells when the array is oriented from a desired attitude relative to the sun. The shadowing of one cell of a group of cells on one side of the mid-cell reduces the power of that group substantially so that full power from the group of cells on the other side of the mid-cell drives the motor to reorient the array to the desired attitude. The cell groups each have a full power output at the power rating of the motor. When the array is at the desired attitude the power output of the two groups of cells balances due to their opposite polarity so that the motor remains unpowered.

  4. A FREEWARE 1D EMITTER MODEL FOR SILICON SOLAR CELLS Keith R. McIntosh

    E-Print Network [OSTI]

    Centre for Sustainable Energy Systems, Australian National University, Canberra, ACT 0200, AUSTRALIA 2 Leibniz University of Hannover, Inst. of Solid-State Physics, Dep. Solar Energy, Appelstrasse 2, 30167A FREEWARE 1D EMITTER MODEL FOR SILICON SOLAR CELLS Keith R. McIntosh 1 and Pietro P. Altermatt 2 1

  5. Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar

    E-Print Network [OSTI]

    Yang, Peidong

    1 Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar Cell Decorated Cyclotron Road, Berkeley, California 94720, United States 3 Department of Materials Science and Engineering_yang@berkeley.edu. #12;2 Fabrication of the suspended single-nanowire solar cells Trench substrates were fabricated from

  6. Impact of dopant compensation on the electrical properties of silicon for solar cell applications

    E-Print Network [OSTI]

    Impact of dopant compensation on the electrical properties of silicon for solar cell applications cells. I would like to show my gratitude to Dr. Keith McIntosh, also a member of my supervisory panel, for sharing his techni- cal expertise in solar cells characterization and modelisation, for giving me precious

  7. Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon 

    E-Print Network [OSTI]

    Lee, I-Syuan

    2014-05-07T23:59:59.000Z

    optimized. The novel nickel-induced crystallization with low thermal budget was demonstrated. Polycrystalline silicon thin films were formed from the amorphous silicon thin films by the pulsed rapid thermal annealing process enhanced with a thin nickel...

  8. 17th European Photovoltaic Solar Energy Conference and Exhibition, Munich, Germany, 22-26 October 2001 pg 1 of 4 NATURAL SUNLIGHT CALIBRATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    2001 pg 1 of 4 NATURAL SUNLIGHT CALIBRATION OF SILICON SOLAR CELLS W. Keogh & A. Blakers Australian important when calibrating solar cells. Commonly used light sources ­ solar simulators ­ are expensive to the AM1.5G and AM1.5D standard spectra. However, sunlight is rarely used for calibration of solar cells

  9. Novel Approach for Selective Emitter Formation and Front Side Metallization of Crystalline Silicon Solar Cells

    SciTech Connect (OSTI)

    Baomin Xu

    2010-07-28T23:59:59.000Z

    In this project we will explore the possibility of forming the front side metallization and selective emitter layer for the crystalline silicon solar cells through using selective laser ablation to create contact openings on the front surface and a screen printer to make connections with conductive paste. Using this novel approach we expect to reduce the specific contact resistance of the silver gridlines by about one order of magnitude compared to the state-of-art industrial crystalline silicon solar cells to below 1 m??cm2, and use lightly doped n+ emitter layer with sheet resistance of not smaller than 100 ?/?. This represents an enabling improvement on crystalline silicon solar cell performance and can increase the absolute efficiency of the solar cell by about 1%. In this scientific report we first present our result on the selective laser ablation of the nitride layer to make contact openings. Then we report our work on the solar cell fabrication by using the laser ablated contact openings with self-doping paste. Through various electrical property characterization and SIMS analysis, the factors limiting the cell performance have been discussed. While through this proof-of-concept project we could not reach the target on cell efficiency improvement, the process to fabricate 125mm full-sized silicon solar cells using laser ablation and self-doping paste has been developed, and a much better understanding of technical challenges has been achieved. Future direction to realize the potential of the new technology has been clearly defined.

  10. Development of Black Silicon Antireflection Control and Passivation Technology for Commercial Application: Cooperative Research and Development Final Report, CRADA Number CRD-12-475

    SciTech Connect (OSTI)

    Yuan, H. C.

    2014-06-01T23:59:59.000Z

    The work involves the development of a commercial manufacturing process for both multicrystalline and monocrystalline solar cells that combines Natcore's patent pending passivation technology.

  11. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    Monocrystalline silicon solar cells, polycrystalline silicon solar cells, and amorphous silicon (thin-film)

  12. Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations

    E-Print Network [OSTI]

    important evaluation criterion for photovoltaic (PV) technology. Therefore, research on novel structuresTowards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping February 2014; published online 3 March 2014) Thin-film solar cells based on silicon have emerged

  13. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect (OSTI)

    Kumar, A.; Ravi, K. V.

    2011-06-01T23:59:59.000Z

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  14. California: TetraCell Silicon Solar Cell Improves Efficiency...

    Energy Savers [EERE]

    at the SunShot Grand Challenge Summit in Denver, Colorado. | Photo by John De La Rosa. Solar Companies Go for the Gold with SunShot Incubator The Story of a Cutting-Edge Solar...

  15. Development of Novel Front Contract Pastes for Crystalline Silicon Solar Cells

    SciTech Connect (OSTI)

    Duty, C.; Jellison, D. G.E. P.; Joshi, P.

    2012-04-05T23:59:59.000Z

    In order to improve the efficiencies of silicon solar cells, paste to silicon contact formation mechanisms must be more thoroughly understood as a function of paste chemistry, wafer properties and firing conditions. Ferro Corporation has been involved in paste development for over 30 years and has extensive expertise in glass and paste formulations. This project has focused on the characterization of the interface between the top contact material (silver paste) and the underlying silicon wafer. It is believed that the interface between the front contact silver and the silicon wafer plays a dominant role in the electrical performance of the solar cell. Development of an improved front contact microstructure depends on the paste chemistry, paste interaction with the SiNx, and silicon (“Si”) substrate, silicon sheet resistivity, and the firing profile. Typical front contact ink contains silver metal powders and flakes, glass powder and other inorganic additives suspended in an organic medium of resin and solvent. During fast firing cycles glass melts, wets, corrodes the SiNx layer, and then interacts with underlying Si. Glass chemistry is also a critical factor in the development of an optimum front contact microstructure. Over the course of this project, several fundamental characteristics of the Ag/Si interface were documented, including a higher-than-expected distribution of voids along the interface, which could significantly impact electrical conductivity. Several techniques were also investigated for the interfacial analysis, including STEM, EDS, FIB, EBSD, and ellipsometry.

  16. Chemical Doping and Enhanced Solar Energy Conversion of Graphene/Silicon Junctions

    E-Print Network [OSTI]

    Li, Xinming; Wang, Kunlin; Wei, Jinquan; Fan, Guifeng; Li, Xiao; Wu, Dehai

    2010-01-01T23:59:59.000Z

    The effect of chemical doping of graphene films on the photovoltaic properties of the graphene/silicon Schottky junction solar cells was investigated. Thionyl chloride modification greatly enhanced the conductivity of graphene film, resulting in a significant improvement in cell performance with a 3-fold increase in conversion efficiency (up to 3.9%) and good short-term stability.

  17. A Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates.

    E-Print Network [OSTI]

    A Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates. Michelle J. Mc Cann, Kylie R. Catchpole, Klaus J. Weber and Andrew W. Blakers Centre for Sustainable Energy Systems Engineering Department, The Australian National University, ACT 0200, Australia. Email : michelle

  18. Light Trapping in Silicon Nanowire Solar Cells Erik Garnett and Peidong Yang*

    E-Print Network [OSTI]

    Yang, Peidong

    because of an extraordinarily high short-circuit current density (Jsc), which was attributed to strongly%, with short- circuit photocurrents higher than planar control samples. KEYWORDS Silicon, nanowires, solar cell material. However, the resulting short optical path length and minority carrier diffusion length

  19. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias

    DOE Patents [OSTI]

    Gee, James M; Schmit, Russell R.

    2007-01-30T23:59:59.000Z

    Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.

  20. Cost-Effective Silicon Wafers for Solar Cells: Direct Wafer Enabling Terawatt Photovoltaics

    SciTech Connect (OSTI)

    None

    2010-01-15T23:59:59.000Z

    Broad Funding Opportunity Announcement Project: 1366 is developing a process to reduce the cost of solar electricity by up to 50% by 2020—from $0.15 per kilowatt hour to less than $0.07. 1366’s process avoids the costly step of slicing a large block of silicon crystal into wafers, which turns half the silicon to dust. Instead, the company is producing thin wafers directly from molten silicon at industry-standard sizes, and with efficiencies that compare favorably with today’s state-of-the-art technologies. 1366’s wafers could directly replace wafers currently on the market, so there would be no interruptions to the delivery of these products to market. As a result of 1366’s technology, the cost of silicon wafers could be reduced by 80%.

  1. Transmissive metallic contact for amorphous silicon solar cells

    DOE Patents [OSTI]

    Madan, A.

    1984-11-29T23:59:59.000Z

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  2. In-Line Crack and Stress Detection in Silicon Solar Cells Using Resonance Ultrasonic Vibrations

    SciTech Connect (OSTI)

    Ostapenko, Sergei

    2013-04-03T23:59:59.000Z

    Statement of Problem and Objectives. Wafer breakage in automated solar cell production lines is identified as a major technical problem and a barrier for further cost reduction of silicon solar module manufacturing. To the best of our knowledge, there are no commercial systems addressing critical needs for in-line inspection of the mechanical quality of solar wafers and cells. The principal objective of the SBIR program is to validate through experiments and computer modeling the applicability of the Resonance Ultrasonic Vibrations system, which ultimately can be used as a real-time in-line manufacturing quality control tool for fast detection of mechanically unstable silicon solar cells caused by cracks. The specific objective of Phase II is to move the technology of in-line crack detection from the laboratory level to commercial demonstration through development of a system prototype. The fragility of silicon wafers possessing low mechanical strength is attributed to peripheral and bulk millimeter-length cracks. The research program is based on feasibility results obtained during Phase I, which established that: (i) the Resonance Ultrasonic Vibrations method is applicable to as-cut, processed wafers and finished cells; (ii) the method sensitivity depends on the specific processing step; it is highest in as-cut wafers and lowest in wafers with metallization pattern and grid contacts; (iii) the system is capable of matching the 2.0 seconds per wafer throughput rate of state-of-art solar cell production lines; (iv) finite element modeling provides vibration mode analysis along with peak shift versus crack length and crack location dependence; (v) a high 91% crack rejection rate was confirmed through experimentation and statistical analysis. The Phase II project has the following specific tasks: (i) specify optimal configurations of the in-line system�¢����s component hardware and software; (ii) develop and justify a system prototype that meets major specifications for an in-line crack detection unit, such as high throughput rate, high level of stability, reproducibility of data acquisition and analysis, and high sensitivity with respect to crack length and crack location; (iii) design a system platform that allows easy integration within and adaptation to various solar cell belt-type production lines; (iv) develop a testing protocol providing quality certification of the production-grade system. Commercial Application of the proposed activity consists of bringing to the solar market a new high-tech product based on an innovative solution and patented methodology to contribute to cost reduction of silicon solar module production. The solar industry, with crystalline silicon as a dominant segment, shows outstanding performance, with approximately 25% yearly growth during the last years. Despite a slowdown with only 5.6 GW installations in 2009, solar module production for the 2010 and 2011 years was recovered. According to European Photonics Industry Consortium new solar PV installations grow by 56% compared to 2010 reached 64.7 GW in 2011. Revenues in the PV industry reached a record high of $93 billion in 2011, a 13.4 percent gain over 2010 â�� and 150 percent over 2009. This growth was forecasted to continue in 2013 with double digits growth. The solar industry is economically driven to make solar panels of the highest conversion efficiency and reliability at the lowest production cost. The Resonance Ultrasonic Vibration system addresses critical needs of the silicon-based solar industry by providing a quality control method and tool, which will improve productivity, increase reliability of products and reduce manufacturing cost of solar panels.

  3. And the Award Goes to... Silicon Ink Solar Technology Supported...

    Energy Savers [EERE]

    2008, Innovalight was recently selected for a 3.4M SunShot Initiative award to support companies developing technologies across the solar energy supply chain that can be rapidly...

  4. The analysis and optimization of a spherical silicon solar cell 

    E-Print Network [OSTI]

    McKee, William Randall

    1976-01-01T23:59:59.000Z

    the minority carriers. This differential equation must be solved for the appropriate geometry and boundary conditions to find the distribu- tion of photon generated carriers in the solar cell. Knowing this, the current density at any point in a given... by solving eq. (3) subject to boundary conditions (5) and (6). Knowing the distribution of the photon generated carriers, we can find the current ? voltage charac- teristics and the theoretical efficiency of the solar cell. However, before solving...

  5. Simulated Co-Optimization of Crystalline Silicon Solar Cell Throughput and Efficiency Using Continuously Ramping Phosphorus Diffusion Profiles

    E-Print Network [OSTI]

    Morishige, Ashley Elizabeth

    Defect engineering is essential for the production of high-performance silicon photovoltaic (PV) devices with cost-effective solar-grade Si input materials. Phosphorus diffusion gettering (PDG) can mitigate the detrimental ...

  6. Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

  7. High-temperature defect engineering for silicon solar cells : predictive process simulation and synchrotron-based microcharacterization

    E-Print Network [OSTI]

    Fenning, David P

    2013-01-01T23:59:59.000Z

    Efficiency is a major lever for cost reduction in crystalline silicon solar cells, which dominate the photovoltaics market but cannot yet compete subsidy-free in most areas. Iron impurities are a key performance-limiting ...

  8. CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE-PASSIVATED SCREEN-PRINTED ALUMINUM-ALLOYED REAR EMITTER

    E-Print Network [OSTI]

    THE ALU+ CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE- PASSIVATED SCREEN-PRINTED ALUMINUM-ALLOYED ABSTRACT Aluminum-doped p-type (Al-p + ) silicon emitters fabricated by means of screen-printing and firing-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon

  9. HIGH-EFFICIENCY BACK-JUNCTION SILICON SOLAR CELL WITH AN IN-LINE EVAPORATED ALUMINUM FRONT GRID

    E-Print Network [OSTI]

    HIGH-EFFICIENCY BACK-JUNCTION SILICON SOLAR CELL WITH AN IN-LINE EVAPORATED ALUMINUM FRONT GRID M-diffused back-junction emitter. The aluminum front side grid is evaporated in an industrial-type in-thick silicon shadow masks for the in-line evaporation of the aluminum front grid. The masks are fabricated

  10. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA); Sigmon, Thomas W. (Beaverton, OR)

    1995-01-01T23:59:59.000Z

    A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

  11. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

    DOE Patents [OSTI]

    Kaschmitter, J.L.; Sigmon, T.W.

    1995-10-10T23:59:59.000Z

    A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

  12. Large-area Silicon-Film{trademark} panels and solar cells

    SciTech Connect (OSTI)

    Rand, J.A.; Barnett, A.M.; Checchi, J.C. [AstroPower, Inc., Newark, DE (United States)] [and others

    1997-01-01T23:59:59.000Z

    This report describes AstroPower`s success in improving its material and processing capabilities during the first phase of this 3-year contract through the Photovoltaic Manufacturing Technology (PVMaT) program. Key results include the demonstration of a 14.6%-efficient Silicon-Film{trademark} solar cell. This laboratory result (1.0 cm{sup 2}) provides the direction needed to develop and optimize continuous, in-line production processes. The continuous nature of the Silicon-Film{trademark} sheet fabrication process is being extended into the solar-cell processing sequence. Plans are in place to make the wafer cleaning, gettering, and diffusion steps all continuous during the scope of this program.

  13. Light Trapping for Thin Silicon Solar Cells by Femtosecond Laser Texturing: Preprint

    SciTech Connect (OSTI)

    Lee, B. G.; Lin, Y. T.; Sher, M. J.; Mazur, E.; Branz, H. M.

    2012-06-01T23:59:59.000Z

    Femtosecond laser texturing is used to create nano- to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 um thick. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit.

  14. Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Schubert, William K. (Albuquerque, NM); Gee, James M. (Albuquerque, NM)

    1999-01-01T23:59:59.000Z

    A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

  15. Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

    DOE Patents [OSTI]

    Ruby, D.S.; Schubert, W.K.; Gee, J.M.

    1999-02-16T23:59:59.000Z

    A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas. 5 figs.

  16. Optimization of oxidation processes to improve crystalline silicon solar cell emitters

    SciTech Connect (OSTI)

    Shen, L.; Liang, Z. C., E-mail: liangzc@mail.sysu.edu.cn; Liu, C. F.; Long, T. J.; Wang, D. L. [School of Physics and Engineering, Institute for Solar Energy Systems, Sun Yat-sen University, 510275, Guangzhou (China)] [School of Physics and Engineering, Institute for Solar Energy Systems, Sun Yat-sen University, 510275, Guangzhou (China)

    2014-02-15T23:59:59.000Z

    Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 ?/? performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 ?/? that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 10{sup 20} cm{sup ?3} and 7.78 × 10{sup 20} cm{sup ?3} and with junction depths between 0.46 ?m and 0.55 ?m possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%{sub abs} compared to conventional emitters with 50 ?/? sheet resistance.

  17. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    SciTech Connect (OSTI)

    Sopori, B. L.

    2007-08-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  18. Phase 2 of the array automated assembly task for the low cost silicon solar array project. Final report

    SciTech Connect (OSTI)

    Petersen, R.C.

    1980-11-01T23:59:59.000Z

    Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process proposed by Motorola, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work has directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The Motorola process was compared with simple electroless nickel plating in a series of parallel experiments. Results are presented. (WHK)

  19. ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL SUBSTRATES

    E-Print Network [OSTI]

    Deng, Xunming

    ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL specific power for space application, we deposited a-Si thin film solar cells on ultra-thin stainless steel-thin stainless steel (SS) substrates (down to 7.5 pm) for space power applications. In this paper, we report our

  20. Solar Fabrik Silicon Services Ltd formerly OJAS Energy | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with form HistoryRistmaSinosteelSolar Energy sro Jump to:

  1. Production of solar grade (SoG) silicon by refining liquid metallurgical grade (MG) silicon: Annual Report: June 10 1998--October 19, 1999

    SciTech Connect (OSTI)

    Khattak, C.P.; Joyce, D.B.; Schmid, F.

    1999-12-13T23:59:59.000Z

    Pyro-metallurgical refining techniques are being developed for use with molten metallurgical-grade (MG) silicon so that directionally solidified refined MG silicon can be used as solar-grade (SoG) silicon feedstock for photovoltaic applications. The most problematic impurity elements are B and P because of their high segregation coefficients. Refining processes such as evacuation, formation of impurity complexes, oxidation of impurities, and slagging have been effective in removal of impurities from MG silicon. Charge sizes have been scaled up to 60 kg. Impurity analysis of 60-kg charges after refining and directional solidification has shown reduction of most impurities to <1 ppma and B and P to the 10-ppma level. It has been demonstrated that B and P, as well as other impurities, can be reduced from MG silicon. Further reduction of impurities will be necessary for use as SoG silicon. The procedures developed are simple and scaleable to larger charge sizes and carried out in a foundry or MG silicon production plant. Therefore, SoG silicon production using these procedures should be at low cost.

  2. Investigation of porous alumina as a self-assembled diffractive element to facilitate light trapping in thin film silicon solar cells

    E-Print Network [OSTI]

    Coronel, Naomi (Naomi Cristina)

    2009-01-01T23:59:59.000Z

    Thin film solar cells are currently being investigated as an affordable alternative energy source because of the reduced material cost. However, these devices suffer from low efficiencies, compared to silicon wafer solar ...

  3. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01T23:59:59.000Z

    Hahn, H. T. , "Photovoltaic Performance of Amorphous SiliconHahn, H. T. , "Photovoltaic Performance of Amorphous SiliconYS, Hahn HT. Photovoltaic Performance of Amorphous Silicon

  4. Photonic assisted light trapping integrated in ultrathin crystalline silicon solar cells by nanoimprint lithography

    E-Print Network [OSTI]

    Trompoukis, Christos; Depauw, Valérie; Gordon, Ivan; Poortmans, Jef; 10.1063/1.4749810.

    2012-01-01T23:59:59.000Z

    We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic nanopatterning, a better in-coupling and trapping of light is achieved, resulting in an absorption enhancement. The proposed light trapping mechanism can be explained as the superposition of a graded index effect and of the diffraction of light inside the photoactive layer. The absorption enhancement is translated into a 23% increase in short-circuit current, as compared to the benchmark cell, resulting in an increase in energy-conversion efficiency.

  5. Amorphous Silicon Solar cells with a Core-Shell Nanograting Structure

    E-Print Network [OSTI]

    Yang, L; Okuno, Y; He, S

    2011-01-01T23:59:59.000Z

    We systematically investigate the optical behaviors of an amorphous silicon solar cell based on a core-shell nanograting structure. The horizontally propagating Bloch waves and Surface Plasmon Polariton (SPP) waves lead to significant absorption enhancements and consequently short-circuit current enhancements of this structure, compared with the conventional planar one. The perpendicular carrier collection makes this structure optically thick and electronically thin. An optimal design is achieved through full-field numerical simulation, and physical explanation is given. Our numerical results show that this configuration has ultrabroadband, omnidirectional and polarization-insensitive responses, and has a great potential in photovoltaics.

  6. Phase 2 of the array automated assembly task for the low cost silicon solar array project. Fifth quarterly report

    SciTech Connect (OSTI)

    Petersen, R.C.; Anderson, J.R.

    1980-01-01T23:59:59.000Z

    This program focuses attention on one key step of a proposed process sequence for mass production of inexpensive silicon solar arrays for terrestrial use. The process step of concern is the metallization of the solar cell. Solarex has proposed that the metallization be accomplished by a single electroless plating of nickel followed by a dip in molten solder, and Solarex manufactures solar cells using this procedure. ing, cleaning and annealing. Motorola has recommended a process which includes the electroless nickel plate and solder dip of the Solarex process, but which precedes these steps with a number of additional steps of palladium plating, cleaning and annealing. Motorola has claimed that these additional steps are necessary to assure proper ohmic contact with the silicon while at the same time avoiding excessive nickel penetration into the silicon. This program comprises a technical comparison of the Solarex and Motorola processes. Progress is reported.

  7. Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate

    E-Print Network [OSTI]

    Psaltis, Demetri

    solar cells Appl. Phys. Lett. 101, 221110 (2012) Error analysis for concentrated solar collectors JThin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light of organic solar cells APL: Org. Electron. Photonics 5, 251 (2012) Effects of the Al cathode evaporation rate

  8. Lithography-free sub-100nm nanocone array antireflection layer for low-cost silicon solar cell

    E-Print Network [OSTI]

    Xu, Zhida

    2014-01-01T23:59:59.000Z

    High density and uniformity sub-100nm surface oxidized silicon nanocone forest structure is created and integrated onto the existing texturization microstructures on photovoltaic device surface by a one-step high throughput plasma enhanced texturization method. We suppressed the broadband optical reflection on chemically textured grade-B silicon solar cells for up to 70.25% through this nanomanufacturing method. The performance of the solar cell is improved with the short circuit current increased by 7.1%, fill factor increased by 7.0%, conversion efficiency increased by 14.66%. Our method demonstrates the potential to improve the photovoltaic device performance with low cost high and throughput nanomanufacturing technology.

  9. Reaching Grid Parity Using BP Solar Crystalline Silicon Technology: A Systems Class Application

    SciTech Connect (OSTI)

    Cunningham, Daniel W; Wohlgemuth, John; Carlson, David E; Clark, Roger F; Gleaton, Mark; Posbic, John P; Zahler, James

    2010-12-06T23:59:59.000Z

    The primary target market for this program was the residential and commercial PV markets, drawing on BP Solar's premium product and service offerings, brand and marketing strength, and unique routes to market. These two markets were chosen because: (1) in 2005 they represented more than 50% of the overall US PV market; (2) they are the two markets that will likely meet grid parity first; and (3) they are the two market segments in which product development can lead to the added value necessary to generate market growth before reaching grid parity. Federal investment in this program resulted in substantial progress toward the DOE TPP target, providing significant advancements in the following areas: (1) Lower component costs particularly the modules and inverters. (2) Increased availability and lower cost of silicon feedstock. (3) Product specifically developed for residential and commercial applications. (4) Reducing the cost of installation through optimization of the products. (5) Increased value of electricity in mid-term to drive volume increases, via the green grid technology. (6) Large scale manufacture of PV products in the US, generating increased US employment in manufacturing and installation. To achieve these goals BP Solar assembled a team that included suppliers of critical materials, automated equipment developers/manufacturers, inverter and other BOS manufacturers, a utility company, and University research groups. The program addressed all aspects of the crystalline silicon PV business from raw materials (particularly silicon feedstock) through installation of the system on the customers site. By involving the material and equipment vendors, we ensured that supplies of silicon feedstock and other PV specific materials like encapsulation materials (EVA and cover glass) will be available in the quantities required to meet the DOE goals of 5 to 10 GW of installed US PV by 2015 and at the prices necessary for PV systems to reach grid parity in 2015. This final technical report highlights the accomplishments of the BP Solar technical team from 2006 to the end of the project in February 2010. All the main contributors and team members are recognized for this accomplishment and their endeavors are recorded in the twelve main tasks described here.

  10. Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-23T23:59:59.000Z

    The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

  11. HIGH EFFICIENCY AMORPHOUS SILICON GERMANIUM SOLAR CELLS X. Liao, W. Du, X. Yang, H. Povolny, X. Xiang and X. Deng

    E-Print Network [OSTI]

    Deng, Xunming

    HIGH EFFICIENCY AMORPHOUS SILICON GERMANIUM SOLAR CELLS X. Liao, W. Du, X. Yang, H. Povolny, X ABSTRACT We report high-efficiency single-junction a-SiGe n-i-p solar cells deposited using rf PECVD-area efficiencies have been improved to 12.5-13.0% and 10.4%, respectively, for 0.25 cm 2 a-SiGe cells

  12. Inks for Ink Jet Printed Contacts for High Performance Silicon Solar Cells: Cooperative Research and Development Final Report, CRADA No. CRD-06-199

    SciTech Connect (OSTI)

    Ginley, D.

    2013-01-01T23:59:59.000Z

    The work under the proposed CRADA will be a joint effort by BP Solar and NREL to develop new types of high performance inks for high quality contacts to silicon solar cells. NREL will develop inks that have electronic properties that will allow the formation of high quality ohmic contacts to n- and p-type crystalline silicon, and BP Solar will evaluate these contacts in test contact structures.

  13. Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

    E-Print Network [OSTI]

    Kim, Yong Jung

    -i-n solar cells Chang Hyun Lee and Koeng Su Lim Department of Electrical Engineering, Korea Advanced this film, amorphous silicon (a-Si solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were as window materials for amorphous silicon (a-Si based solar cells.1­4 In using such films as a p layer

  14. ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR CELLS

    E-Print Network [OSTI]

    ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al of aluminum ox- ide (Al2O3) grown by atomic layer deposition (ALD) pro- vide an excellent level of sur

  15. Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Jiang, C. S.; Moutinho, H. R.; Reedy, R. C.; Al-Jassim, M. M.; Yan, B.; Yue, G.; Sivec, L.; Yang, J.; Guha, S.; Tong, X.

    2012-04-01T23:59:59.000Z

    We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement on a nc-Si:H cell with a higher oxygen impurity concentration shows that the nonuniformity of the electric field is much more pronounced than in samples having a lower O impurity, indicating that O is an electron donor in nc-Si:H materials. This nonuniform distribution of electric field implies a mixture of diffusion and drift of carrier transport in the nc-Si:H solar cells. The composition and structure of these nc-Si:H cells were further investigated by using secondary-ion mass spectrometry and Raman spectroscopy, respectively. The effects of impurity and structural properties on the electrical potential distribution and solar cell performance are discussed.

  16. Optimization of the optical properties of nanostructured silicon surfaces for solar cell applications

    SciTech Connect (OSTI)

    Zhou, Di; Pennec, Y.; Djafari-Rouhani, B.; Lambert, Y.; Deblock, Y.; Stiévenard, D., E-mail: didier.stievenard@isen.fr [Institut d'Electronique et de Microélectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe de Physique, Cité scientifique, avenue Poincaré, 59652 Villeneuve d'Ascq (France); Cristini-Robbe, O. [PHLAM, UMR8523, Université de Lille 1, 59652 Villeneuve d'Asq Cedex (France); Xu, T. [Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Faucher, M. [Institut d'Electronique et de Microélectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe NAM6, Cité scientifique, avenue Poincaré, 59652 Villeneuve d'Asq (France)

    2014-04-07T23:59:59.000Z

    Surface nanostructuration is an important challenge for the optimization of light trapping in solar cell. We present simulations on both the optical properties and the efficiency of micro pillars—MPs—or nanocones—NCs—silicon based solar cells together with measurements on their associated optical absorption. We address the simulation using the Finite Difference Time Domain method, well-adapted to deal with a periodic set of nanostructures. We study the effect of the period, the bottom diameter, the top diameter, and the height of the MPs or NCs on the efficiency, assuming that one absorbed photon induces one exciton. This allows us to give a kind of abacus involving all the geometrical parameters of the nanostructured surface with regard to the efficiency of the associated solar cell. We also show that for a given ratio of the diameter over the period, the best efficiency is obtained for small diameters. For small lengths, MPs are extended to NCs by changing the angle between the bottom surface and the vertical face of the MPs. The best efficiency is obtained for an angle of the order of 70°. Finally, nanostructures have been processed and allow comparing experimental results with simulations. In every case, a good agreement is found.

  17. Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209

    SciTech Connect (OSTI)

    Sopori, B.

    2013-03-01T23:59:59.000Z

    NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

  18. 1366 Technologies, Inc. | Department of Energy

    Energy Savers [EERE]

    to build two innovative, new manufacturing facilities that produce silicon wafers for solar cells at a fraction of today's cost. Innovation The multi-crystalline silicon wafers...

  19. PROCEEDINGS O F THE IEEE, VOL.56, NO. 1, JANUARY196837 [`I J. J. Wysocki,"Lithium-doped radiation-resistant silicon solar

    E-Print Network [OSTI]

    Teich, Malvin C.

    ,"Lithium-doped radiation-resistant silicon solar cells," IEEE Trans. Nuclear Science. vol.NS-13, pp. 168-173, December 1966. X-713-6548, November1965. 161 ~ , "Thermalannealing of radiation damagein solar cells," ['I R. L. Tech. J.,vol. 41, pp.1573-1588,September 1962. ["I R. L. Statler, "Radiation damage insilicon solar

  20. Mat. Res. Soc. Symp. Proc. Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer

    E-Print Network [OSTI]

    Deng, Xunming

    of Microcrystalline Silicon Based Solar Cells at High i-layer Deposition Rates Using a Gas Jet Technique S.J. Jones-layers for nip single-junction solar cells. The high deposition rates allow for fabrication of the required plays in determining the device performance. INTRODUCTION µc-Si-based solar cells are an intriguing

  1. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    SciTech Connect (OSTI)

    Theodorakos, I.; Zergioti, I.; Tsoukalas, D.; Raptis, Y. S., E-mail: yraptis@central.ntua.gr [Physics Department, National Technical University of Athens, Heroon Polytechniou 9, 15780 Zographou, Athens (Greece); Vamvakas, V. [Heliosphera SA, Industrial Area of Tripolis, 8th Building Block, 5th Road, GR-221 00 Tripolis (Greece)

    2014-01-28T23:59:59.000Z

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  2. Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers

    SciTech Connect (OSTI)

    NONE

    1998-08-01T23:59:59.000Z

    The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

  3. High-performance hybrid organic-inorganic solar cell based on planar n-type silicon

    SciTech Connect (OSTI)

    Chi, Dan [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qi, Boyuan; Wang, Jizheng [Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qu, Shengchun, E-mail: qsc@semi.ac.cn; Wang, Zhanguo [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-05-12T23:59:59.000Z

    Hybrid organic-inorganic solar cells were fabricated by spin coating the hole transporting conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film on n-type crystalline silicon (n-Si). By incorporating different additives into the PEDOT:PSS, the conductivity and wettability of PEDOT:PSS film are markedly improved, and the device performance is greatly enhanced accordingly. To further optimize the device performance, poly(3-hexylthiophene) (P3HT) layer was inserted between the n-Si and PEDOT:PSS layer. The P3HT layer blocks electrons from diffusing to the PEDOT:PSS, and hence reduces recombination at the anode side. The device eventually exhibits a high power conversion efficiency of 11.52%.

  4. Micrometer-Thin Crystalline-Silicon Solar Cells Integrating Numerically Optimized 2-D Photonic Crystals

    E-Print Network [OSTI]

    Depauw, V; Daif, O El; Gomard, G; Lalouat, L; Drouard, E; Trompoukis, C; Fave, A; Seassal, C; Gordon, I

    2013-01-01T23:59:59.000Z

    A 2-D photonic crystal was integrated experimentally into a thin-film crystalline-silicon solar cell of 1-{\\mu}m thickness, after numerical optimization maximizing light absorption in the active material. The photonic crystal boosted the short-circuit current of the cell, but it also damaged its open-circuit voltage and fill factor, which led to an overall decrease in performances. Comparisons between modeled and actual optical behaviors of the cell, and between ideal and actual morphologies, show the global robustness of the nanostructure to experimental deviations, but its particular sensitivity to the conformality of the top coatings and the spread in pattern dimensions, which should not be neglected in the optical model. As for the electrical behavior, the measured internal quantum efficiency shows the strong parasitic absorptions from the transparent conductive oxide and from the back-reflector, as well as the negative impact of the nanopattern on surface passivation. Our exemplifying case, thus, illustr...

  5. Towards the efficiency limits of silicon solar cells: how thin is too thin?

    E-Print Network [OSTI]

    Kowalczewski, Piotr

    2015-01-01T23:59:59.000Z

    It is currently possible to fabricate crystalline silicon solar cells with the absorber thickness ranging from a few hundreds of micrometers (conventional wafer-based cells) to devices as thin as $1\\,\\mu\\mathrm{m}$. In this work, we use a model single-junction solar cell to calculate the limits of energy conversion efficiency and estimate the optimal absorber thickness. The limiting efficiency for cells in the thickness range between 40 and $500\\,\\mu\\mathrm{m}$ is very similar and close to 29%. In this regard, we argue that decreasing the thickness below around $40\\,\\mu\\mathrm{m}$ is counter-productive, as it significantly reduces the maximum achievable efficiency, even when optimal light trapping is implemented. We analyse the roles of incomplete light trapping and extrinsic (bulk and surface) recombination mechanisms. For a reasonably high material quality, consistent with present-day fabrication techniques, the optimal thickness is always higher than a few tens of micrometers. We identify incomplete light ...

  6. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01T23:59:59.000Z

    Solar Energy Materials and Solar Cells, vol. 93, 2009, pp.Solar energy materials and solar cells, vol. 91, 2007, pp.to integrate thin-film solar cells and batteries (2)

  7. Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-01T23:59:59.000Z

    The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

  8. Spatially resolved determination of the short-circuit current density of silicon solar cells via lock-in thermography

    SciTech Connect (OSTI)

    Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, D-79110 Freiburg (Germany)

    2014-05-19T23:59:59.000Z

    We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

  9. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual technical report, April 1, 1995--March 31, 1996

    SciTech Connect (OSTI)

    Gordon, R.G.; Sato, H.; Liang, H.; Liu, X.; Thornton, J. [Harvard Univ., Cambridge, MA (United States)

    1996-08-01T23:59:59.000Z

    The general objective is to develop methods to deposit materials which can be used to make more efficient solar cells. The work is organized into three general tasks: Task 1. Develop improved methods for depositing and using transparent conductors of fluorine-doped zinc oxide in amorphous silicon solar cells Task 2. Deposit and evaluate titanium oxide as a reflection-enhancing diffusion barrier between amorphous silicon and an aluminum or silver back-reflector. Task 3. Deposit and evaluate electrically conductive titanium oxide as a transparent conducting layer on which more efficient and more stable superstrate cells can be deposited. About one-third of the current project resources are allocated to each of these three objectives.

  10. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2005-11-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  11. European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2.4 HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SILICON SOLAR CELLS WITH CELL

    E-Print Network [OSTI]

    27th European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2 cost of energy in photovoltaics can be achieved by increasing the conversion efficiency as well into the surface of a thick silicon wafer. After sintering at 1100 °C in hydrogen atmosphere silicon is grown

  12. Development of Thin Film Silicon Solar Cell Using Inkjet Printed Silicon and Other Inkjet Processes: Cooperative Research and Development Final Report, CRADA Number CRD-07-260

    SciTech Connect (OSTI)

    Sopori, B.

    2012-04-01T23:59:59.000Z

    The cost of silicon photovoltaics (Si-PV) can be greatly lowered by developing thin-film crystalline Si solar cells on glass or an equally lower cost substrate. Typically, Si film is deposited by thermal evaporation, plasma enhanced chemical vapor deposition, and sputtering. NREL and Silexos have worked under a CRADA to develop technology to make very low cost solar cells using liquid organic precursors. Typically, cyclopentasilane (CPS) is deposited on a glass substrate and then converted into an a-Si film by UV polymerization followed by low-temperature optical process that crystallizes the amorphous layer. This technique promises to be a very low cost approach for making a Si film.

  13. NREL's Black Silicon Increases Solar Cell Efficiency by Reducing Reflected Sunlight (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2010-11-01T23:59:59.000Z

    A fact sheet detailing the R&D 100 Award-winning Black Silicon Nanocatalytic Wet-Chemical Etch technology.

  14. Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

    2012-06-01T23:59:59.000Z

    We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

  15. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    SciTech Connect (OSTI)

    Ravi, T. S.

    2013-05-01T23:59:59.000Z

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  16. Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

    2014-09-09T23:59:59.000Z

    A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

  17. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2006-08-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  18. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01T23:59:59.000Z

    better mechanical durability. CIGS solar cell has about 20%5]. However, CIGS solar cells degrade with humidity andSelenide (CIGS)[3] and organic polymer[4] solar cells are

  19. Comparison of spatially resolved carrier lifetimes in mc-Si with solar cell and material characteristics

    SciTech Connect (OSTI)

    Glunz, S.W.; Hebling, C.; Warta, W.; Wettling, W. [Fraunhofer-Inst. fuer Solare Energiesysteme, Freiburg (Germany)

    1994-12-31T23:59:59.000Z

    The authors introduce a novel application of modulated free carrier absorption (MFCA) for measuring minority carrier lifetimes in multicrystalline silicon with high spatial resolution. The improved lateral resolution compared to other contactless techniques allows the correlation between these lifetime maps and solar cell characteristics as well as microscopic properties, like dislocations, precipitates, oxygen concentration, etc. Comparisons of the lifetime maps measured on the starting material and light beam induced current (LBIC) maps exhibit a very good qualitative correlation of the structures observed in both cases. In addition, correlations to microscopic characteristics like high dislocation density in regions with low lifetimes are investigated and a comparison with spatially resolved FT-IR measurements of the interstitial oxygen concentration is performed.

  20. Quantitative analysis of defects in silicon. Silicon sheet growth development for the Large Area Silicon Sheet Task of the Low-Cost Solar Array Project. Final report

    SciTech Connect (OSTI)

    Natesh, R.; Smith, J.M.; Bruce, T.; Qidwai, H.A.

    1980-04-01T23:59:59.000Z

    The complete procedures for the defect analysis of silicon samples using a QTM-720 Image Analyzing System are described, chemical polishing, etching, and QTM operation are discussed. The data from one hundred and seventy four (174) samples, and a discussion of the data are included. The data include twin boundary density, dislocation pit density, and grain boundary length. (WHK)

  1. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    SciTech Connect (OSTI)

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01T23:59:59.000Z

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  2. Influence of surface plasmon resonances of silver nanoparticles on optical and electrical properties of textured silicon solar cell

    SciTech Connect (OSTI)

    Sardana, Sanjay K.; Chava, Venkata S. N.; Thouti, Eshwar; Chander, Nikhil; Komarala, Vamsi K., E-mail: vamsi@ces.iitd.ac.in [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kumar, Sanjai [Central Electronics Limited, Sahibabad 201010, Uttar Pradesh (India); Reddy, S. R. [BHEL-Amorphous Silicon Solar Cell Plant, BHEL House, Siri Fort, New Delhi 110049 (India)

    2014-02-17T23:59:59.000Z

    Here, we report average reflectance reduction of ?8% in wavelength range of 300–1100?nm after coupling surface plasmon resonances (SPRs) of silver nanoparticles (NPs) to textured silicon (T-Si) surface. The enhancement of photocurrent from T-Si solar cell in off-resonant SPR region observed due to better radiative efficiency of NPs leading to outflow of scattered far-field into silicon maximized power generating electrons. Improvement in series resistance, fill factor, and open-circuit voltage (insensitive NPs size and morphology) are also observed with NPs along with photocurrent enhancement (sensitive to NPs sizes), which resulted cell efficiency enhancement from 4.49% to 6.42% for large area of 12.24 cm{sup 2}.

  3. Methods for manufacturing geometric multi-crystalline cast materials

    DOE Patents [OSTI]

    Stoddard, Nathan G

    2013-11-26T23:59:59.000Z

    Methods are provided for casting one or more of a semi-conductor, an oxide, and an intermetallic material. With such methods, a cast body of a geometrically ordered multi-crystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm.

  4. Optimization of transparent and reflecting electrodes for amorphous-silicon solar cells. Final subcontract report, 1 May 1991--30 April 1994

    SciTech Connect (OSTI)

    Gordon, R.G.; Hu, J.; Lacks, D.; Musher, J.; Thornton, J.; Liang, H. [Harvard Univ., Cambridge, MA (United States)

    1994-07-01T23:59:59.000Z

    Fluorine-doped zinc oxide was shown to have the lowest absorption loss of any of the known transparent conductors. An apparatus was constructed to deposit textured, transparent, conductive, fluorine-doped zinc oxide layers with uniform thickness over a 10 cm by 10 cm area, using inexpensive, high-productivity atmospheric pressure chemical vapor deposition. Amorphous silicon solar cells grown on these textured films show very high peak quantum efficiencies (over 90%). However, a significant contact resistance develops at the interface between the amorphous silicon and the zinc oxide. Transparent, conductive gallium-doped zinc oxide films were grown by APCVD at a low enough temperature (260{degree}C) to be deposited on amorphous silicon as a final conductive back contact to solar cells. A quantum-mechanical theory of bonding was developed and applied to some metal oxides; it forms a basis for understanding TCO structures and the stability of their interfaces with silicon.

  5. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2008-09-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  6. 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, Sept. 2008 PROGRESS IN THE SURFACE PASSIVATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, Sept. 2008 PROGRESS typically lead to a sig- nificant degradation of the bulk lifetime [3]. Hence, low- temperature surface

  7. Fundamental Research and Development for Improved Crystalline Silicon Solar Cells: Final Subcontract Report, March 2002 - July 2006

    SciTech Connect (OSTI)

    Rohatgi, A.

    2007-11-01T23:59:59.000Z

    This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplish the goals of this program. This report is divided into five sections that summarize our work on i) PECVD SiN-induced defect passivation (Sections 1 and 2); ii) the effect of material inhomogeneity on the performance of mc-Si solar cells (Section 3); iii) a comparison of light-induced degradation in commercially grown Ga- and B-doped Czochralski Si ingots (Section 4); and iv) the understanding of the formation of high-quality thick-film Ag contacts on high sheet-resistance emitters (Section 5).

  8. See-through amorphous silicon solar cells with selectively transparent and conducting photonic crystal back reflectors for building integrated photovoltaics

    SciTech Connect (OSTI)

    Yang, Yang [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada)] [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); O’Brien, Paul G. [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada) [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada); Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Ozin, Geoffrey A., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Kherani, Nazir P., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada)

    2013-11-25T23:59:59.000Z

    Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with selectively transparent and conducting photonic crystal (STCPC) back-reflectors are demonstrated. Short circuit current density of a 135?nm thick a-Si:H cell with a given STCPC back-reflector is enhanced by as much as 23% in comparison to a reference cell with an ITO film functioning as its rear contact. Concurrently, solar irradiance of 295?W/m{sup 2} and illuminance of 3480 lux are transmitted through the cell with a given STCPC back reflector under AM1.5 Global tilt illumination, indicating its utility as a source of space heating and lighting, respectively, in building integrated photovoltaic applications.

  9. Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

    SciTech Connect (OSTI)

    Müller, Ralph, E-mail: ralph.mueller@ise.fraunhofer.de; Schrof, Julian; Reichel, Christian; Benick, Jan; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2, Freiburg D-79110 (Germany)

    2014-09-08T23:59:59.000Z

    The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implanted phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674?mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.

  10. AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION

    E-Print Network [OSTI]

    Deng, Xunming

    -based polymers (silicones) may not show this effect. Although silicones were used to encapsulate solar cells improved, which may make them suitable for encapsulating solar cells once again. We have recentlyAMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION Aarohi Vijh 1

  11. Evaluation of Solar Grade Silicon Produced by the Institute of Physics and Technology: Cooperative Research and Development Final Report, CRADA Number CRD-07-211

    SciTech Connect (OSTI)

    Page, M.

    2013-02-01T23:59:59.000Z

    NREL and Solar Power Industries will cooperate to evaluate technology for producing solar grade silicon from industrial waste of the phosphorus industry, as developed by the Institute of Physics and Technology (IPT), Kazakhstan. Evaluation will have a technical component to assess the material quality and a business component to assess the economics of the IPT process. The total amount of silicon produced by IPT is expected to be quite limited (50 kg), so evaluations will need to be done on relatively small quantities (? 5 kg/sample).

  12. 17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating: Preprint

    SciTech Connect (OSTI)

    Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

    2011-07-01T23:59:59.000Z

    In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon 'black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in 'black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

  13. Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD

    E-Print Network [OSTI]

    doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic The photovoltaic industry has been growing with astonishing rates over the past years, but expansion plans

  14. Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD

    E-Print Network [OSTI]

    doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic-2263" DOI : 10.1016/j.solmat.2011.03.038 #12;2 1. Introduction The photovoltaic industry has been growing

  15. amorphous silicon-based solar: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    networking issues away from the programmer via ... Beal, Jacob 58 A Silicon-Based Micro Gas Turbine Engine for Power Generation CERN Preprints Summary: This paper reports on our...

  16. Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells

    E-Print Network [OSTI]

    Powell, Douglas M. (Douglas Michael)

    2014-01-01T23:59:59.000Z

    Reducing material use is a major driver for cost reduction of crystalline silicon photovoltaic modules. The dominant wafer fabrication process employed in the industry today, ingot casting & sawing, wastes approximately ...

  17. ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES

    SciTech Connect (OSTI)

    Ridgeway, R.G.; Hegedus, S.S.; Podraza, N.J.

    2012-08-31T23:59:59.000Z

    Air Products set out to investigate the impact of additives on the deposition rate of both ���µCSi and ���±Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products�¢���� electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

  18. Optimal design of one-dimensional photonic crystal back reflectors for thin-film silicon solar cells

    SciTech Connect (OSTI)

    Chen, Peizhuan; Hou, Guofu, E-mail: gfhou@nankai.edu.cn; Zhang, Jianjun, E-mail: jjzhang@nankai.edu.cn; Zhang, Xiaodan; Zhao, Ying [Institute of Photoelectronics and Tianjin Key Laboratory of Photoelectronic Thin-film Devices and Technique, Nankai University, Tianjin 300071 (China)

    2014-08-14T23:59:59.000Z

    For thin-film silicon solar cells (TFSC), a one-dimensional photonic crystal (1D PC) is a good back reflector (BR) because it increases the total internal reflection at the back surface. We used the plane-wave expansion method and the finite difference time domain (FDTD) algorithm to simulate and analyze the photonic bandgap (PBG), the reflection and the absorption properties of a 1D PC and to further explore the optimal 1D PC design for use in hydrogenated amorphous silicon (a-Si:H) solar cells. With identified refractive index contrast and period thickness, we found that the PBG and the reflection of a 1D PC are strongly influenced by the contrast in bilayer thickness. Additionally, light coupled to the top three periods of the 1D PC and was absorbed if one of the bilayers was absorptive. By decreasing the thickness contrast of the absorptive layer relative to the non-absorptive layer, an average reflectivity of 96.7% was achieved for a 1D PC alternatively stacked with a-Si:H and SiO{sub 2} in five periods. This reflectivity was superior to a distributed Bragg reflector (DBR) structure with 93.5% and an Ag film with 93.4%. n-i-p a-Si:H solar cells with an optimal 1D PC-based BR offer a higher short-circuit current density than those with a DBR-based BR or an AZO/Ag-based BR. These results provide new design rules for photonic structures in TFSC.

  19. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01T23:59:59.000Z

    of thin- film Li-ion batteries under flexural deflection,”thin-film solar cells and batteries (2) Characterizesolar cells and batteries for multifunctional performance (

  20. amorphous-silicon solar cells: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    state of affairs Schiff, Eric A. 19 Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics University of...

  1. amorphous-silicon-based solar cell: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Pankaj J Edla; Dr. Bhupendra Gupta 89 Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics University of...

  2. Thin Silicon Solar Cells: A Path to 35% Shockley-Queisser Limits

    SciTech Connect (OSTI)

    Ding, Laura; Boccard, Mathieu; Williams, Joshua; Jeffries, April; Gangam, Srikanth; Ghosh, Kunal; Honsberg, Christiana; Bowden, Stuart; Holman, Zachary; Atwater, Harry; Buonassisi, Tonio; Bremner, Stephen; Green, Martin; Balif, Christoph; Bertoni, Mariana

    2014-06-08T23:59:59.000Z

    Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here the objectives and workplan of a recently launched project funded by the U.S. Department of Energy through the Foundational Program to Advance Cell Efficiency II (FPACE II), which aims at leading crystalline silicon to an efficiency breakthrough. The project will tackle fundamental approach of materials design, defect engineering, device simulations and materials growth and characterization. Among the main novelties, the implementation of carrier selective contacts made of wide bandgap material or stack of materials is investigated for improved passivation, carrier extraction and carrier transport. Based on an initial selection of candidate materials, preliminary experiments are conducted to verify the suitability of their critical parameters as well as preservation of the silicon substrate surface and bulk properties. The target materials include III-V and metal-oxide materials.

  3. Amorphous silicon solar cells. Quarterly report No. 1, 1 October 1980-31 December 1980

    SciTech Connect (OSTI)

    Carlson, D.E.; Balberg, I.; Crandall, R.S.; Dresner, J.; Goldstein, B.; Hanak, J.J.; Schade, H.E.; Staebler, D.L.; Weakliem, H.A.

    1981-02-01T23:59:59.000Z

    Progress is reported on the following: theoretical modeling, deposition and doping studies, experimental methods for the characterization of a-Si:H, formation of solar-cell structures, theoretical and experimental evaluation of solar-cell parameters, and stability studies. (MHR)

  4. Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.

    DOE Patents [OSTI]

    Yang, Liyou (Plainsboro, NJ); Chen, Liangfan (Langhorne, PA)

    1998-03-24T23:59:59.000Z

    Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

  5. Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E. Bouree (1), V. Perraki (*) (1), G. Revel (2),R. Kishore (2) (**), J. L. Pastol (2), R. Mertens (3), M. Caymax (3) and M. Eyckmans

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    687 Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E avec les autres aptes à l'utilisation de Si-UMG bon marché. Abstract. 2014 Epitaxial solar cells have and electron diffusion length adequate to produce good solar cells. 10.3 % efficiency cells have been obtained

  6. Nanoscale photon management in silicon solar cells Sangmoo Jeong, Shuang Wang, and Yi Cui

    E-Print Network [OSTI]

    Cui, Yi

    and replication of butterfly wings for photovoltaic application J. Vac. Sci. Technol. A 30, 01A146 (2012) High-efficiency (2012) Amorphous and nanocrystalline silicon thin film photovoltaic technology on flexible substrates J. Technol. A 29, 061201 (2011) Photovoltaic manufacturing: Present status, future prospects, and research

  7. Back-side hydrogenation technique for defect passivation in silicon solar cells

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    1994-01-01T23:59:59.000Z

    A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.

  8. Back-side hydrogenation technique for defect passivation in silicon solar cells

    DOE Patents [OSTI]

    Sopori, B.L.

    1994-04-19T23:59:59.000Z

    A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts. 3 figures.

  9. Potential-induced degradation in solar cells: Electronic structure and diffusion mechanism of sodium in stacking faults of silicon

    SciTech Connect (OSTI)

    Ziebarth, Benedikt, E-mail: Benedikt.Ziebarth@iwm.fraunhofer.de; Gumbsch, Peter [Fraunhofer Institut für Werkstoffmechanik IWM, Wöhlerstr. 11, 79108 Freiburg (Germany); Karlsruher Institut für Technologie, Institut für Ausgewandte Materialien (IAM-ZBS), Engelbert-Arnold-Str. 4, 76131 Karlsruhe (Germany); Mrovec, Matous; Elsässer, Christian [Fraunhofer Institut für Werkstoffmechanik IWM, Wöhlerstr. 11, 79108 Freiburg (Germany)

    2014-09-07T23:59:59.000Z

    Sodium decorated stacking faults (SFs) were recently identified as the primary cause of potential-induced degradation in silicon (Si) solar-cells due to local electrical short-circuiting of the p-n junctions. In the present study, we investigate these defects by first principles calculations based on density functional theory in order to elucidate their structural, thermodynamic, and electronic properties. Our calculations show that the presence of sodium (Na) atoms leads to a substantial elongation of the Si-Si bonds across the SF, and the coverage and continuity of the Na layer strongly affect the diffusion behavior of Na within the SF. An analysis of the electronic structure reveals that the presence of Na in the SF gives rise to partially occupied defect levels within the Si band gap that participate in electrical conduction along the SF.

  10. Influence of the pattern shape on the photonic efficiency of front-side periodically patterned ultrathin crystalline silicon solar cells

    E-Print Network [OSTI]

    Herman, Aline; Depauw, Valerie; Daif, Ounsi El; Deparis, Olivier

    2012-01-01T23:59:59.000Z

    Patterning the front side of an ultra-thin crystalline silicon (c Si) solar cell helps keeping the energy conversion efficiency high by compensating for the light absorption losses. A super-Gaussian mathematical expression was used in order to encompass a large variety of nanopattern shapes and to study their influence on the photonic performance. We prove that the enhancement in the maximum achievable photo-current is due to both impedance matching condition at short wavelengths and to the wave nature of light at longer wavelengths. We show that the optimal mathematical shape and parameters of the pattern depend on the c Si thickness. An optimal shape comes with a broad optimal parameter zone where fabricating errors would have much less influence on the efficiency. We prove that cylinders are not the best suited shape. To compare our model with a real slab, we fabricated a nanopatterned c Si slab via Nano Imprint Lithography.

  11. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, April 1, 1994--March 31, 1995

    SciTech Connect (OSTI)

    Gordon, R.G. [Harvard Univ., Cambridge, MA (United States)

    1995-10-01T23:59:59.000Z

    Transparent and reflecting electrodes are important parts of the structure of amorphous silicon solar cells. We report improved methods for depositing zinc oxide, deposition of tin nitride as a potential reflection-enhancing diffusion barrier between the a-Si and back metal electrodes. Highly conductive and transparent fluorine-doped zinc oxide was successfully produced on small areas by atmospheric pressure CVD from a less hazardous zinc precursor, zinc acetylacetonate. The optical properties measured for tin nitride showed that the back-reflection would be decreased if tin nitride were used instead of zinc oxide as a barrier layer over silver on aluminum. Niobium-doped titanium dioxide was produced with high enough electrical conductivity so that normal voltages and fill factors were obtained for a-Si cells made on it.

  12. Thermal Management of Solar Cells

    E-Print Network [OSTI]

    Saadah, Mohammed Ahmed

    2013-01-01T23:59:59.000Z

    Nanostructured Silicon- Based Solar Cells, 2013. X. C. Tong,heat exchangers, and solar cells," Sci-Tech News, vol. 65,in crystalline silicon solar cells," Renewable Energy, vol.

  13. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

    SciTech Connect (OSTI)

    Liu, X.; Zhang, X. W., E-mail: xwzhang@semi.ac.cn; Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L. [Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083 (China)

    2014-11-03T23:59:59.000Z

    We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

  14. Journal of Crystal Growth 287 (2006) 402407 Transition metals in photovoltaic-grade ingot-cast multicrystalline

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    silicon (mc-Si) ingot casting for cost-effective solar cell wafer production. Highly sensitive to reduce metal contamination levels in mc-Si solar cells. In this manuscript, we assess the contamination-mail address: istratov@berkeley.edu (A.A. Istratov). #12;over 50% of solar cells worldwide). This source

  15. High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing

    E-Print Network [OSTI]

    Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

    2008-01-01T23:59:59.000Z

    One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

  16. Excellent Passivation and Low Reflectivity Al2O3/TiO2 Bilayer Coatings for n-Wafer Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Lee, B. G.; Skarp, J.; Malinen, V.; Li, S.; Choi, S.; Branz, H. M.

    2012-06-01T23:59:59.000Z

    A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes {approx}1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.

  17. European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2AO.2.3 EFFECT OF SiN DEPOSITION TEMPERATURE ON SURFACE PASSIVATION OF N-TYPE CZ SILICON

    E-Print Network [OSTI]

    25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2AO.2N deposition leads to increasing the hydrogen content of the SiN layers. This improves the supply of hydrogen silicon using thermally grown oxide or amorphous films based on hydrogenated silicon compounds has been

  18. Fabrication of contacts for silicon solar cells including printing burn through layers

    DOE Patents [OSTI]

    Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

    2014-06-24T23:59:59.000Z

    A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

  19. Simulation of Large-Area Silicon Solar Cells1 Gernot Heiser2

    E-Print Network [OSTI]

    New South Wales, University of

    from the Australian Research Council (ARC). The Centre for Photovoltaic Devices and Systems, fax: +61 2 385 5995, e-mail: G.Heiser@unsw.edu.au 3 Centre for Photovoltaic Devices and Systems, tel to produce an accurate model of a full-sized high-efficiency solar cell. We demon- strate the power

  20. Optimization of the deposition and annealing conditions of fluorine-doped indium oxide films for silicon solar cells

    SciTech Connect (OSTI)

    Untila, G. G., E-mail: GUntila@mics.msu.su; Kost, T. N.; Chebotareva, A. B.; Timofeyev, M. A. [Moscow State University, Skobel'tsyn Institute of Nuclear Physics (Russian Federation)

    2013-03-15T23:59:59.000Z

    Fluorine-doped indium oxide (IFO) films are deposited onto (pp{sup +})Si and (n{sup +}nn{sup +})Si structures made of single-crystal silicon by ultrasonic spray pyrolysis. The effect of the IFO deposition time and annealing time in an argon atmosphere with methanol vapor on the IFO chemical composition, the photovoltage and fill factor of the Illumination-U{sub oc} curves of IFO/(pp{sup +})Si structures, and the sheet resistance of IFO/(n{sup +}nn{sup +})Si structures, correlating with the IFO/(n{sup +})Si contact resistance, is studied. The obtained features are explained by modification of the properties of the SiO{sub x} transition layer at the IFO/Si interface during deposition and annealing. Analysis of the results made it possible to optimize the fabrication conditions of solar cells based on IFO/(pp{sup +})Si heterostructures and to increase their efficiency from 17% to a record 17.8%.

  1. Development of low cost contacts to silicon solar cells. Final report, 15 October 1978-30 April 1980

    SciTech Connect (OSTI)

    Tanner, D.P.; Iles, P.A.

    1980-01-01T23:59:59.000Z

    A summary of work done on the development of a copper based contact system for silicon solar cells is presented. The work has proceeded in three phases: (1) Development of a copper based contact system using plated Pd-Cr-Cu. Good cells were made but cells degraded under low temperature (300/sup 0/C) heat treatments. (2) The degradation in Phase I was identified as copper migration into the cells junction region. A paper study was conducted to find a proper barrier to the copper migration problem. Nickel was identified as the best candidate barrier and this was verified in a heat treatment study using evaporated metal layers. (3) An electroless nickel solution was substituted for the electroless chrominum solution in the original process. Efforts were made to replace the palladium bath with an appropriate nickel layer, but these were unsuccessful. 150 cells using the Pd-Ni-Cu contact system were delivered to JPL. Also a cost study was made on the plating process to assess the chance of reaching 5 cents/watt.

  2. Microsystems enabled photovoltaics 14.9% efficient 14μm thick crystalline silicon solar cell

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighandSWPA / SPRA / USACE625Data ShowC -9 FirstBRDF4,SolarMicrosystems

  3. Angular behavior of the absorption limit in thin film silicon solar cells

    E-Print Network [OSTI]

    Naqavi, Ali; Söderström, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

    2013-01-01T23:59:59.000Z

    We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

  4. A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

    SciTech Connect (OSTI)

    Wagner, Hannes [Department of Solar Energy, Institute Solid-State Physics, Leibniz University of Hannover, Appelstr. 2, 30167 Hannover (Germany); ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, NSW 2052 (Australia); Ohrdes, Tobias [Institute for Solar Energy Research Hamelin (ISFH), 31860 Emmerthal (Germany); Dastgheib-Shirazi, Amir [Div. Photovoltaics, Department of Physics, University of Konstanz, 78457 Konstanz (Germany); Puthen-Veettil, Binesh; König, Dirk [ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, NSW 2052 (Australia); Altermatt, Pietro P. [Department of Solar Energy, Institute Solid-State Physics, Leibniz University of Hannover, Appelstr. 2, 30167 Hannover (Germany)

    2014-01-28T23:59:59.000Z

    The performance of passivated emitter and rear (PERC) solar cells made of p-type Si wafers is often limited by recombination in the phosphorus-doped emitter. To overcome this limitation, a realistic PERC solar cell is simulated, whereby the conventional phosphorus-doped emitter is replaced by a thin, crystalline gallium phosphide (GaP) layer. The resulting GaP/Si PERC cell is compared to Si PERC cells, which have (i) a standard POCl{sub 3} diffused emitter, (ii) a solid-state diffused emitter, or (iii) a high efficiency ion-implanted emitter. The maximum efficiencies for these realistic PERC cells are between 20.5% and 21.2% for the phosphorus-doped emitters (i)–(iii), and up to 21.6% for the GaP emitter. The major advantage of this GaP hetero-emitter is a significantly reduced recombination loss, resulting in a higher V{sub oc}. This is so because the high valence band offset between GaP and Si acts as a nearly ideal minority carrier blocker. This effect is comparable to amorphous Si. However, the GaP layer can be contacted with metal fingers like crystalline Si, so no conductive oxide is necessary. Compared to the conventional PERC structure, the GaP/Si PERC cell requires a lower Si base doping density, which reduces the impact of the boron-oxygen complexes. Despite the lower base doping, fewer rear local contacts are necessary. This is so because the GaP emitter shows reduced recombination, leading to a higher minority electron density in the base and, in turn, to a higher base conductivity.

  5. Thermal Management of Solar Cells

    E-Print Network [OSTI]

    Saadah, Mohammed Ahmed

    2013-01-01T23:59:59.000Z

    heat exchangers, and solar cells," Sci-Tech News, vol. 65,Solar Energy Materials and Solar Cells, vol. 86, pp. 451-Nanostructured Silicon- Based Solar Cells, 2013. X. C. Tong,

  6. Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon 

    E-Print Network [OSTI]

    Martin, Michael S.

    2013-08-13T23:59:59.000Z

    Embedding metal nanoparticles in crystalline silicon possesses numerous possible applications to fabricate optoelectronic switches, increase efficiency of radiation detectors, decrease the thickness of monocrystalline silicon solar panels...

  7. 2008 Solar Technologies Market Report

    E-Print Network [OSTI]

    Price, S.

    2010-01-01T23:59:59.000Z

    transportation costs. China's CSG Solar Glass Co. built theSolar Suntech Power, a Chinese crystalline silicon company with production in China,

  8. New Approaches for Passivation of Crystalline and Amorphous Silicon: Cooperative Research and Development Final Report, CRADA Number CRD-09-351

    SciTech Connect (OSTI)

    Sopori, B.

    2012-09-01T23:59:59.000Z

    New approaches of passivating crystalline, multicrystalline, and amorphous silicon will be explored. These will include the use of aqueous solution of KCN and a proprietary composition formulated by Mallinckrodt Baker, Inc. The surface passivation will be compared with that provided by an iodine-ethanol solution, and bulk passivation will be compared with that of H-passivation obtained by silicon nitride, in a fire-through process.

  9. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.

    2005-10-01T23:59:59.000Z

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  10. Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation

    E-Print Network [OSTI]

    Vora, Ankit; Pearce, Joshua M; Bergstrom, Paul L; Güney, Durdu Ö

    2014-01-01T23:59:59.000Z

    We study polarization independent improved light trapping in commercial thin film hydrogenated amorphous silicon (a-Si:H) solar photovoltaic cells using a three-dimensional silver array of multi-resonant nano-disk structures embedded in a silicon nitride anti-reflection coating (ARC) to enhance optical absorption in the intrinsic layer (i-a-Si:H) for the visible spectrum for any polarization angle. Predicted total optical enhancement (OE) in absorption in the i-a-Si:H for AM-1.5 solar spectrum is 18.51% as compared to the reference, and producing a 19.65% improvement in short-circuit current density (JSC) over 11.7 mA/cm2 for a reference cell. The JSC in the nano-disk patterned solar cell (NDPSC) was found to be higher than the commercial reference structure for any incident angle. The NDPSC has a multi-resonant optical response for the visible spectrum and the associated mechanism for OE in i-a-Si:H layer is excitation of Fabry-Perot resonance facilitated by surface plasmon resonances. The detrimental Staebl...

  11. Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells

    E-Print Network [OSTI]

    Deceglie, Michael G.

    2014-01-01T23:59:59.000Z

    silicon thin film solar cells," Solar Energy, vol. 77, pp.nano-crystalline silicon n–i–p solar cells," Solar EnergyMaterials and Solar Cells, vol. 93, pp. H. Sakai, T.

  12. An efficient light trapping scheme based on textured conductive photonic crystal back reflector for performance improvement of amorphous silicon solar cells

    SciTech Connect (OSTI)

    Chen, Peizhuan; Hou, Guofu, E-mail: gfhou@nankai.edu.cn; Huang, Qian; Zhao, Jing; Zhang, Jianjun, E-mail: jjzhang@nankai.edu.cn; Ni, Jian; Zhang, Xiaodan; Zhao, Ying [Tianjin Key Laboratory of Photoelectronic Thin-Film Devices and Technique, Institute of Photoelectronics, Nankai University, Tianjin 300071 (China); Fan, QiHua [Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, South Dakota 57007 (United States)

    2014-08-18T23:59:59.000Z

    An efficient light trapping scheme named as textured conductive photonic crystal (TCPC) has been proposed and then applied as a back-reflector (BR) in n-i-p hydrogenated amorphous silicon (a-Si:H) solar cell. This TCPC BR combined a flat one-dimensional photonic crystal and a randomly textured surface of chemically etched ZnO:Al. Total efficiency enhancement was obtained thanks to the sufficient conductivity, high reflectivity and strong light scattering of the TCPC BR. Unwanted intrinsic losses of surface plasmon modes are avoided. An initial efficiency of 9.66% for a-Si:H solar cell was obtained with short-circuit current density of 14.74?mA/cm{sup 2}, fill factor of 70.3%, and open-circuit voltage of 0.932?V.

  13. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect (OSTI)

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01T23:59:59.000Z

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  14. aastaks silicon valleysse: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  15. assisted grown silicon: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  16. acid modified silicone: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  17. athermal silicon microring: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  18. High-Efficiency Amorphous Silicon and Nanocrystalline Silicon-Based Solar Cells and Modules: Final Technical Progress Report, 30 January 2006 - 29 January 2008

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.

    2008-05-01T23:59:59.000Z

    United Solar Ovonic successfully used its spectrum-splitting a-Si:H/a-SiGe:H/a-SiGe:H triple-junction structure in their manufacturing plants, achieving a manufacturing capacity of 118 MW in 2007, and set up a very aggressive expansion plan to achieve grid parity.

  19. area solar cells: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cells Lecture 6: Solar Cells Solar Cell Technologies A) Crystalline Silicon B) Thin Film C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6:...

  20. aluminium arsenide solar cells: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cells Lecture 6: Solar Cells Solar Cell Technologies A) Crystalline Silicon B) Thin Film C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6:...

  1. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01T23:59:59.000Z

    hydrogen dilution in silane on light induced degradation of hydrogenated amor- phous silicon films for solar photovoltaichydrogen content from 14-22%[76]. Hydrogenated amorphous silicon has promise as a photovoltaic

  2. Nucleation and solidification of silicon for photovoltaics

    E-Print Network [OSTI]

    Appapillai, Anjuli T. (Anjuli Tara)

    2010-01-01T23:59:59.000Z

    The majority of solar cells produced today are made with crystalline silicon wafers, which are typically manufactured by growing a large piece of silicon and then sawing it into ~200 pm wafers, a process which converts ...

  3. DOE Solar Energy Technologies Program TPP Final Report - A Value Chain Partnership to Accelerate U.S. PV Industry Growth, GE Global Research

    SciTech Connect (OSTI)

    Todd Tolliver; Danielle Merfeld; Charles Korman; James Rand; Tom McNulty; Neil Johnson; Dennis Coyle

    2009-07-31T23:59:59.000Z

    General Electric’s (GE) DOE Solar Energy Technologies TPP program encompassesd development in critical areas of the photovoltaic value chain that affected the LCOE for systems in the U.S. This was a complete view across the value chain, from materials to rooftops, to identify opportunities for cost reductions in order to realize the Department of Energy’s cost targets for 2010 and 2015. GE identified a number of strategic partners with proven leadership in their respective technology areas to accelerate along the path to commercialization. GE targeted both residential and commercial rooftop scale systems. To achieve these goals, General Electric and its partners investigated three photovoltaic pathways that included bifacial high-efficiency silicon cells and modules, low-cost multicrystalline silicon cells and modules and flexible thin film modules. In addition to these technologies, the balance of system for residential and commercial installations were also investigated. Innovative system installation strategies were pursed as an additional avenue for cost reduction.

  4. System and method for liquid silicon containment

    SciTech Connect (OSTI)

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2014-06-03T23:59:59.000Z

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  5. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2013-05-28T23:59:59.000Z

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  6. Local measurements of diffusion length and chemical character of metal clusters in multicrystalline silicon

    E-Print Network [OSTI]

    -ray Microprobe Techniques X-ray Fluorescence Microscopy ( -XRF). Synchrotron-based X-ray fluorescence microscopy ( -XRF), also known as "Scanning -XRF" ( -SXRF), is used to detect and characterize the elemental compositions, sizes, and depths of metal-rich clusters. µ-XRF is similar to energy dispersive X

  7. Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

    E-Print Network [OSTI]

    Ganapati, Vidya

    2012-01-01T23:59:59.000Z

    Newman, and M. I. Bertoni for ? -XRF and laboratory support.uorescence microscopy ? ? -XRF? at Beamline 2-ID-D ?Refs. 57These GBs were analyzed by ? -XRF at APS Beamline 2-ID-D

  8. Solar America Initiative

    Broader source: Energy.gov (indexed) [DOE]

    Capacity (MW) 0.1494 20 Baseline (2006) 0.3181 1 0.069 150 2009-2010 2014-2015 BP Solar International Inc. Reaching Grid Parity Using BP Solar Crystalline Silicon Technology...

  9. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, D.S.; Basore, P.A.; Schubert, W.K.

    1998-08-11T23:59:59.000Z

    A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

  10. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

    1998-08-11T23:59:59.000Z

    A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

  11. amorphous-nanocrystalline silicon thin: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high...

  12. Light-induced degradation and metastable-state recovery with reaction kinetics modeling in boron-doped Czochralski silicon solar cells

    SciTech Connect (OSTI)

    Kim, Soo Min; Chun, Seungju; Bae, Suhyun; Park, Seungeun; Lee, Hae-seok, E-mail: lhseok@korea.ac.kr; Kim, Donghwan, E-mail: donghwan@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701 (Korea, Republic of); Kang, Min Gu; Song, Hee-eun [Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Kang, Yoonmook, E-mail: ddang@korea.ac.kr [KU-KIST Green School, Graduate School of Energy and Environment, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701 (Korea, Republic of)

    2014-08-25T23:59:59.000Z

    Solar cells fabricated from boron-doped p-type Czochralski silicon suffer from light-induced degradation that can lower the conversion efficiency by up to 10% relative. When solar cells are exposed to temperatures between 100?°C and 200?°C under illumination, regeneration, in which the minority carrier lifetime is gradually recovered, occurs after the initial light-induced degradation. We studied the light-induced degradation and regeneration process using carrier injection within a design chamber and observed open-circuit voltage trends at various sample temperatures. We proposed a cyclic reaction kinetics model to more precisely analyze the degradation and recovery phenomenon. Our model incorporated the reaction paths that were not counted in the original model between the three states (annealed, degradation, and regeneration). We calculated a rate constant for each reaction path based on the proposed model, extracted an activation energy for each reaction using these rate constants at various temperatures, and calculated activation energies of redegradation and the stabilization reaction.

  13. Antireflection and SiO2 Surface Passivation by Liquid-Phase Chemistry for Efficient Black Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Yuan, H. C.; Oh, J.; Zhang, Y.; Kuznetsov, O. A.; Flood, D. J.; Branz, H. M.

    2012-06-01T23:59:59.000Z

    We report solar cells with both black Si antireflection and SiO2 surface passivation provided by inexpensive liquid-phase chemistry, rather than by conventional vacuum-based techniques. Preliminary cell efficiency has reached 16.4%. Nanoporous black Si antireflection on crystalline Si by aqueous etching promises low surface reflection for high photon utilization, together with lower manufacturing cost compared to vacuum-based antireflection coating. Ag-nanoparticle-assisted black Si etching and post-etching chemical treatment recently developed at NREL enables excellent control over the pore diameter and pore separation. Performance of black Si solar cells, including open-circuit voltage, short-circuit current density, and blue response, has benefited from these improvements. Prior to this study, our black Si solar cells were all passivated by thermal SiO2 produced in tube furnaces. Although this passivation is effective, it is not yet ideal for ultra-low-cost manufacturing. In this study, we report, for the first time, the integration of black Si with a proprietary liquid-phase deposition (LPD) passivation from Natcore Technology. The Natcore LPD forms a layer of <10-nm SiO2 on top of the black Si surface in a relatively mild chemical bath at room temperature. We demonstrate black Si solar cells with LPD SiO2 with a spectrum-weighted average reflection lower than 5%, similar to the more costly thermally grown SiO2 approach. However, LPD SiO2 provides somewhat better surface-passivation quality according to the lifetime analysis by the photo-conductivity decay measurement. Moreover, black Si solar cells with LPD SiO2 passivation exhibit higher spectral response at short wavelength compared to those passivated by thermally grown SiO2. With further optimization, the combination of aqueous black Si etching and LPD could provide a pathway for low-cost, high-efficiency crystalline Si solar cells.

  14. The Influence of High-Energy Lithium Ion Irradiation on Electrical Characteristics of Silicon and GaAs Solar Cells

    E-Print Network [OSTI]

    B. Jayashree; Ramani; M. C. Radhakrishna; Anil Agrawal; Saif Ahmad Khan; A. Meulenberg

    2006-10-22T23:59:59.000Z

    Space-grade Si and GaAs solar cells were irradiated with 15 & 40 MeV Li ions. Illuminated (AM0 condition) and unilluminated I-V curves reveal that the effect of high-energy Li ion irradiation has produced similar effects to that of proton irradiation. However, an additional, and different, defect mechanism is suggested to dominate in the heavier-ion results. Comparison is made with proton-irradiated solar-cell work and with non-ionizing energy-loss (NIEL) radiation-damage models.

  15. EE580 Solar Cells Todd J. Kaiser

    E-Print Network [OSTI]

    Kaiser, Todd J.

    7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 06 · Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies · A) Crystalline Silicon · B) Thin Film · C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

  16. Solar Cell Nanotechnology Final Technical Report

    SciTech Connect (OSTI)

    Das, Biswajit [University of Nevada, Las Vegas

    2014-05-07T23:59:59.000Z

    The objective of this project is to develop a low cost nonlithographic nanofabrication technology for the fabrication of thin film porous templates as well as uniform arrays of semiconductor nanostructures for the implementation of high efficiency solar cells. Solar cells based on semiconductor nanostructures are expected to have very high energy conversion efficiencies due to the increased absorption coefficients of semiconductor nanostructures. In addition, the thin film porous template can be used for optimum surface texturing of solar cells leading to additional enhancement in energy conversion efficiency. An important requirement for these applications is the ability to synthesize nanostructure arrays of different dimensions with good size control. This project employed nanoporous alumina templates created by the anodization of aluminum thin films deposited on glass substrates for the fabrication of the nanostructures and optimized the process parameters to obtain uniform pore diameters. An additional requirement is uniformity or regularity of the nanostructure arrays. While constant current anodization was observed to provide controlled pore diameters, constant voltage anodization was needed for regularity of the nanostructure arrays. Thus a two-step anodization process was investigated and developed in this project for improving the pore size distribution and pore periodicity of the nanoporous alumina templates. CdTe was selected to be the active material for the nanowires, and the process for the successful synthesis of CdTe nanowires was developed in this project. Two different synthesis approaches were investigated in this project, electrochemical and electrophoretic deposition. While electrochemical synthesis was successfully employed for the synthesis of nanowires inside the pores of the alumina templates, the technique was determined to be non-optimum due to the need of elevated temperature that is detrimental to the structural integrity of the nanoporous alumina templates. In order to eliminate this problem, electrophoretic deposition was selected as the more appropriate technique, which involves the guided deposition of semiconductor nanoparticles in the presence of ultrasonic energy to form the crystalline nanowires. Extensive experimental research was carried out to optimize the process parameters for formation of crystalline nanowires. It was observed that the environmental bath temperature plays a critical role in determining the structural integrity of the nanowires and hence their lengths. Investigation was carried out for the formation of semitransparent ohmic contacts on the nanowires to facilitate photocurrent spectroscopy measurements as well as for solar cell implementation. Formation of such ohmic contacts was found to be challenging and a process involving mechanical and electrochemical polishing was developed to facilitate such contacts. The use of nanoporous alumina templates for the surface texturing of mono- and multi-crystalline solar cells was extensively investigated by electrochemical etching of the silicon through the pores of the nanoporous templates. The processes for template formation as well as etching were optimized and the alumina/silicon interface was investigated using capacitance-voltage characterization. The process developed was found to be viable for improving solar cell performance.

  17. Preparation of silicon substrates for gallium-arsenide solar cells by electron-beam-pulse processing. Annual technical report, March 15, 1980-March 15, 1981

    SciTech Connect (OSTI)

    Tobin, S.P.

    1981-05-01T23:59:59.000Z

    In the past year a process has been developed for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency GaAs solar cells on low-cost silicon substrates in an economical manner. Thin (less than or equal to 1 ..mu..m) layers of Ge have been deposited on Si wafers by chemical vapor deposition (CVD) in single-crystal form or by vacuum evaporation in amorphous or polycrystalline form. The CVD films have given the best results, with good crystallinity and electrical properties as deposited. A persistent problem with surface roughness in the as-deposited films has been overcome by pulsed electron beam melting of the near-surface region in time periods on the order of a microsecond. The brief molten period smooths the surface features without compromising the crystallinity, electrical properties, or interfacial abruptness of the Ge film. These layers are of a quality suitable for further evaluation by GaAs growth and cell processing in the next phase of the program. Pulsed electron beam processing also serves a vital function for the evaporated Ge films, which are melted by the beam and recrystallized on the Si substrates, epitaxial single crystal Ge layers result from amorphous or polycrystalline starting films. To date results have not been as satisfactory as for CVD films; contamination from several sources has been identified as a problem. Many of these sources have been eliminated, so that a decision on the intrinsic limitations of the evaporated film approach should be made in the near future.

  18. Analysis of International Policies In The Solar Electricity Sector: Lessons for India

    E-Print Network [OSTI]

    Deshmukh, Ranjit

    2011-01-01T23:59:59.000Z

    semiconductor companies started manufacturing solar cellstechnology, and First Solar (the company promoting CdTe) hass Who of Solar Silicon Production: Companies, Technologies,

  19. Phase 2 of the array automated assembly task for the Low Cost Silicon Solar Array Project. Seventh quarterly report

    SciTech Connect (OSTI)

    Petersen, R.C.

    1980-07-01T23:59:59.000Z

    Work during this quarter emphasized the evaluation of the Motorola metallization process, the major experimental task of the program. The Motorola process is a lengthy one, designed to assure reproducible metallization of solar cells, but it was found difficult to reproduce relative to a single step electroless nickel plating. It is also concluded, on the basis of experiments performed to date, that the product of the Motorola process is virtually identical to the product of a simple electroless nickel plating process.

  20. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09T23:59:59.000Z

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  1. Growth of nano-and microcrystalline silicon thin films at low temperature by pulsed electron deposition

    E-Print Network [OSTI]

    Zexian, Cao

    crystallites (heating-film silicon solar cells take a larger market share than the single- and polycrystalline silicon solar cells industry. In all the efforts, substrate heating or post-annealing at a temperature higher than 300 1C

  2. antibiotic-impregnated silicone rubber: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  3. Breakthrough Cutting Technology Promises to Reduce Solar Costs

    Broader source: Energy.gov [DOE]

    Silicon Genesis advancing the field of solar energy by developing a process that will virtually eliminate all waste when cutting materials needed to implement solar technology.

  4. Matter & Energy Solar Energy

    E-Print Network [OSTI]

    Rogers, John A.

    See Also: Matter & Energy Solar Energy· Electronics· Materials Science· Earth & Climate Energy at the University of Illinois, the future of solar energy just got brighter. Although silicon is the industry Electronics Over 1.2 Million Electronics Parts, Components and Equipment. www.AlliedElec.com solar energy

  5. Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

    SciTech Connect (OSTI)

    Stradins, P.; Essig, S.; Nemeth, W.; Lee, B. G.; Young, D.; Norman, A.; Liu, Y.; Luo, J.-W.; Warren, E.; Dameron, A.; LaSalvia, V.; Page, M.; Rohatgi, A.; Upadhyaya, A.; Rounsaville, B.; Ok, Y.-W.; Glunz, S.; Benick, J.; Feldmann, F.; Hermle, M.

    2014-12-01T23:59:59.000Z

    We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer are examined, including transparent n-type oxides and n+-doped poly-Si. SiO2/n+-poly-Si full-area, induced-junction back surface field contacts to n-FZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.

  6. Solar Energy Materials & Solar Cells 78 (2003) 567595 Low-mobility solar cells: a device physics primer

    E-Print Network [OSTI]

    Schiff, Eric A.

    Solar Energy Materials & Solar Cells 78 (2003) 567­595 Low-mobility solar cells: a device physics, Syracuse, New York 13244-1130, USA Abstract The properties of pin solar cells based on photogeneration for the solar conversion efficiency of amorphous silicon-based cells that are limited by valence bandtail

  7. Thermodynamics, Entropy, Information and the Efficiency of Solar Cells

    E-Print Network [OSTI]

    Abrams, Zeev R.

    2012-01-01T23:59:59.000Z

    At Silicon Solar Cell Performance. Energ. Conv. 11, 63 (efficiency of solar cells. Sol. Energ. Mat. Sol. C. 139. E.Solar Cells: Comparison between Carrier Multiplication and Down- Conversion, Sol. Energ.

  8. CRADA Final Report: Process development for hybrid solar cells

    E-Print Network [OSTI]

    Ager, Joel W

    2011-01-01T23:59:59.000Z

    development for hybrid solar cells Summary of the specific20 wafers with full tandem solar cell test structure perNitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2

  9. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01T23:59:59.000Z

    Solar Energy Materials and Solar Cells, 86:207–216, 2005. [silicon thin films and solar cells. Journal of Appliedof a p-i-n thin-film solar cell with front transparent con-

  10. 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim www.pss-rapid.com

    E-Print Network [OSTI]

    - talline silicon (c-Si) for solar cells [1], especially in block- cast multicrystalline silicon (mc-Si). So , Daniel Macdonald2 , Karsten Bothe1 , and Jan Schmidt1 1 Institute for Solar Energy Research Hamelin (ISFH and FeB in Si. Hence, an extra calibration of the PL signal to the excess carrier density is not required

  11. Solar Chemical Peculiarities?

    E-Print Network [OSTI]

    Carlos Allende Prieto

    2006-12-08T23:59:59.000Z

    Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar "analogs", the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel.

  12. Measurment of Depositing and Bombarding Species Involved in the Plasma Production of Amorphous Silicon and Silicon/Germanium Solar Cells: Annual Technical Report, 1 June 2002 - 31 May 2005

    SciTech Connect (OSTI)

    Gallagher, A.; Rozsa, K.; Horvath, P.; Kujundcik, D.

    2006-06-01T23:59:59.000Z

    The objective of this study is to measure the molecular species that lead to the growth of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (..mu..c-Si) photovoltaic (PV) devices from RF discharges. Neutral radicals produce most of the film growth during this PV-device production, and, by implication, radicals primarily determine the device structure and electrical characteristics. The most important feature of the present experiment is thus the measurement of neutral-radical fluxes to the substrate. Additional depositing species that can influence film properties are positive ions and silicon-based particles produced by the discharge; we also measure these positive-ion species here. Some studies have already measured some of these radical and positive-ion species in silane and silane/argon discharges, but not for discharge conditions similar to those used to produce most photovoltaic devices. Our objective is to measure all of these species for conditions typically used for device production. In particular, we have studied 13.6 MHz-excited discharges in pure silane and silane/hydrogen vapors.

  13. European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2BO.1.5 BORON-OXYGEN-RELATED RECOMBINATION CENTERS IN COMPENSATED SILICON

    E-Print Network [OSTI]

    25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2BO.1 Rougieux2 , Daniel Macdonald2 , Karsten Bothe1 , and Jan Schmidt1 1 Institute for Solar Energy Research and Computer Science, The Australian National University Canberra ACT 0200, Australia ABSTRACT: The impact

  14. KATHERINE N. ZAUNBRECHER (970)658-0569 kzaunbrecher@gmail.com

    E-Print Network [OSTI]

    Sites, James R.

    multicrystalline silicon defect types using photoluminescence, defect- band emissions, and lock-in thermography

  15. Solar cells with a twist Comments ( 35)

    E-Print Network [OSTI]

    Rogers, John A.

    Solar cells with a twist Article Comments ( 35) JULIE STEENHUYSEN REUTERS OCTOBER 7, 2008 AT 9:58 AM EDT CHICAGO -- U.S. researchers have found a way to make efficient silicon-based solar cells of buildings as opportunities for solar energy," Prof. Rogers said in a telephone interview. Solar cells, which

  16. Development of an In-line Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells: Final Technical Report, 2 August 2002-15 November 2004

    SciTech Connect (OSTI)

    Sinton, R. A.

    2004-12-01T23:59:59.000Z

    The objective of this subcontract over its two-phase, two-year duration was to design and develop improvements to the existing Sinton Consulting R&D minority-carrier lifetime testers. The improvements enable the possibilities for performing various in-line diagnostics on crystalline silicon wafers and cells for solar cell manufacturing lines. This facilitates manufacturing optimization and improved process control. The scope of work for Phase I was to prototype industrial applications for the improved instruments. A small-sample-head version of the instrument was designed and developed in this effort. This new instrument was complemented by detailed application notes detailing the productive use of minority-carrier lifetime measurements for process optimization and routine process control. In Phase II, the results from the first year were applied to design new instruments for industrial applications. These instruments were then characterized and documented. We report here on four new instruments, each optimized for a specific application as demanded by industrial customers. The documentation for these instruments was very technical and involved considerable R&D. Applications were developed that applied the latest in R&D on industrial silicon materials. By investigating the compromises that would be necessary to measure industrial material directly without the sample preparation that is commonly done for good research, we were able to develop several very innovative applications that can now be done directly in the production line for process control.

  17. Characterization of temperature profile in furnace and solubility of iron in silicon

    E-Print Network [OSTI]

    Modi, Vrajesh Y

    2011-01-01T23:59:59.000Z

    A better understanding of the behavior of impurities, such as iron, in silicon can lead to increases in solar cell efficiency. The purpose of this thesis was to study the behavior of iron in silicon via three sub-tasks: ...

  18. Transition metal interaction and Ni-Fe-Cu-Si phases in silicon T. Buonassisi,b

    E-Print Network [OSTI]

    to 25% of the cost of solar cells. Further- more, the available amount of electronic-grade silicon.1063/1.2748346 I. INTRODUCTION About 91% of solar cells currently produced are based on crystalline silicon cell efficiencies.4,5 Since the majority of conventional solar cell technolo- gies are poorly suited

  19. Project Profile: Development and Productization of High-Efficiency, Low-Cost Building-Integrated PV Shingles Using Monocrystalline Silicon Thin-Film Solar Cells

    Broader source: Energy.gov [DOE]

    The Solexel-OC team is developing a BIPV roofing shingle product that includes low-profile solar modules and a unique attachment system that will be fastened directly to the roof and incorporates...

  20. Photocharge transport and recombination measurements in amorphous silicon films and solar cells by photoconductive frequency mixing. Annual subcontract report, May 13, 1994--May 12, 1995

    SciTech Connect (OSTI)

    Braunstein, R.; Yang, Y.; Dong, S. [Univ. of California, Los Angeles, CA (United States)] [Univ. of California, Los Angeles, CA (United States)

    1995-10-01T23:59:59.000Z

    The continuous decay of electron drift mobility in intrinsic a-Si:H and a-SiC:H upon light soaking was investigated by the photomixing technique. The photoconductivity, lifetime and drift mobility in intrinsic hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon carbide (a-SiC:H) while light-soaking were determined using a photomixing technique. In addition to the decay of the photoconductivity and electron lifetime, continuous decay of the electron drift mobility was found during the light soaking process, which reveals a new phenomenon associated with the Staebler-Wronski effect. The drift mobility decreased by a factor of 2 for 20 hour light soaking at 2.5 sun intensity. Experimental data were fitted to a stretched exponential law. Different stretched-exponential parameters for photoconductivity, lifetime and drift mobility were obtained, which indicates the production of defects with different generation kinetics upon light soaking.

  1. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices

    SciTech Connect (OSTI)

    Martin U. Pralle; James E. Carey

    2010-07-31T23:59:59.000Z

    SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

  2. Ultraviolet selective silicon photodiode

    E-Print Network [OSTI]

    Chintapalli, Koteswara Rao

    1992-01-01T23:59:59.000Z

    (' silicon surfa&(& that n&ost of t h&) phologeneraied hole-el( & tron pairs are k&st by surface rccornbinai ion before being nolle&. trxl hy a pr). jun?i, ion. The major cause of surl'a&. e re?omhination is probably due Io lifetim(. shortening ol' Lhe... drpth corresponded to a high& r shor4wav? length rcsponsiv- ity tlirough liis ( xperimcnial diodes with junction dcpl ha ol'0. -'I to 2 0 pm. I indmayer and Allison [4I] I'abri&. ated n+-p solar cells with junction &lcpths of approximately 0. 1, 0. 15...

  3. A study of laser annealing effects in boron ion implanted polycrystalline silicon films

    E-Print Network [OSTI]

    Suh, Inhak Harry

    1982-01-01T23:59:59.000Z

    , large-grain polycrysta11ine silicon has potential use for large volume production of low cost solar cells [1-3] . Polycrystalline silicon is easy to prepare and is compa- tible with monolithic silicon integrated circuit technology; however... of 2O pico second [5]. The MOSFET's fabricated to date on thin films of polycrystalline silicon have also exhibited poor transconductance [5J. It has been reported that the electrical properties of ion implanted polycrystalline silicon can...

  4. Amorphous Silicon

    Broader source: Energy.gov [DOE]

    DOE has a proven track record of funding successes in amorphous silicon (a-Si)research. A list of current projects, summary of the benefits, and discussion on the production and manufacturing of...

  5. Integrated All-silicon Thin-film Power Electronics on Flexible Sheets For Ubiquitous Wireless Charging Stations based on Solar-energy Harvesting

    E-Print Network [OSTI]

    . The blocks overcome these challenges and generate AC power using a power inverter and control circuits, all the power inverter circuit. To generate an AC output current, the two solar modules (S1/2) are used maximizes the current, and all of the S1/2 current is delivered to the load, yielding high power-inverter

  6. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

    E-Print Network [OSTI]

    Mariani, Giacomo

    2013-01-01T23:59:59.000Z

    silicon nanowires as solar cells and nanoelectronic powerTowards efficient hybrid solar cells based on fully polymerSariciftci, N. S. Hybrid solar cells, Inorg. Chim. Acta 361,

  7. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01T23:59:59.000Z

    of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

  8. Solar cell array interconnects

    DOE Patents [OSTI]

    Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

    1995-11-14T23:59:59.000Z

    Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

  9. Solar cell array interconnects

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA); Colella, Nicolas J. (Livermore, CA); Williams, Kenneth A. (Livermore, CA)

    1995-01-01T23:59:59.000Z

    Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

  10. Photocharge Transport and Recombination Measurements in Amorphous Silicon Films and Solar Cells by Photoconductive Frequency Mixing: Final Subcontract Report: 13 May 1994 - 15 January 1998

    SciTech Connect (OSTI)

    Braunstein, R.; Tang, Y.; Dong, S.; Liebe, J.; Sun, G.; Kattwinkel, A. (University of California: Los Angeles, California)

    1999-05-04T23:59:59.000Z

    This report describes work performed during this subcontract by the University of California. The photoconductivity, lifetime, and drift mobility of intrinsic hydrogenated amorphous silicon (a-Si:H), hydrogenated amorphous silicon carbide (a-SiC:H), and hydrogenated amorphous silicon germanium (a-SiGe:H) were determined using a photomixing technique in the as prepared and light-soaked states. In addition to the decay of the photoconductivity and electron lifetime, continuous decay of the electron drift mobility was found during the light-soaking process (Staebler-Wronski effect). Experimental data were fitted to a stretched exponential law. Different stretched-exponential parameters for photoconductivity, lifetime, and drift mobility were obtained, which indicates the production of defects with different generation kinetics upon light soaking. The transport properties of intrinsic a-Si:H samples (which were produced by the hot-wire technique at NREL at different substrate temperatures such that the hydrogen content ranged from >10% to <1%), were systematically studied. It was found that with increasing substrate temperature, the lifetime, the drift mobility, and the photoconductivity decreased, but the Urbach energy ({approx} 0.1 eV below the conduction band) increased. These results indicate that for the a-Si:H films with increasing deposition temperature, the density of positively charged, negatively charged, and neutral defects all show a tendency to increase, in agreement with the results observed by other workers employing other measurement techniques. Researchers also found that the drift mobility of these samples increases and the lifetime decreases with increasing electric field, while the mt product is essentially independent of the electric field in the range of 1,000-10,000 V/cm. The electric field dependence of mobility (Dm) /m0/ (DE) in the as-grown or/and annealed states are always larger than that in the light-soaked state. This electric field dependence of mobility can be explained by the existence of long-range potential fluctuations. Photoemission measurements in air were performed on a-Si:H, a-SiC:H, and transparent conducting oxide layers, and revealed inhomogeneities of composition or surface contamination.

  11. Optimized Designs and Materials for Nanostructure Based Solar Cells

    E-Print Network [OSTI]

    Shao, Qinghui

    2009-01-01T23:59:59.000Z

    efficiency of solar panels and power to weight ratio insolar cells, there exist two basic processes to convert sunlight power topower to a load connected when charged by Sun. The typical output voltage of a silicon based solar

  12. STATEMENT OF CONSIDERATIONS REQUEST BY BP SOLAR INTERNATIONAL...

    Broader source: Energy.gov (indexed) [DOE]

    RATIONALE FOR DECISION DISPOSITION BP Solar Large-Scale PV Module Manufac- 58 percent cost sharing International, LLC turing Using Ultra-Thin Poly-Crystalline * Silicon Solar Cells...

  13. Journal of Crystal Growth 241 (2002) 4550 Boron doping of silicon layers grown by liquid phase epitaxy

    E-Print Network [OSTI]

    Energy Systems, Department of Engineering, Australian National University, Acton, 0200, Australia film solar cell applications as it allows the growth of a back surface field and a lightly doped bulk; B1. Boron; B1. Silicon; B3. Solar cells 1. Introduction Thin film silicon solar cells

  14. High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells: Final Technical Report, 1 September 2001--6 March 2005

    SciTech Connect (OSTI)

    Deng, X.

    2006-01-01T23:59:59.000Z

    The objectives for the University of Toledo are to: (1) establish a transferable knowledge and technology base for fabricating high-efficiency triple-junction a-Si-based solar cells, and (2) develop high-rate deposition techniques for the growing a-Si-based and related alloys, including poly-Si, c-Si, a-SiGe, and a-Si films and photovoltaic devices with these materials.

  15. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    SciTech Connect (OSTI)

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato [University of Ferrara - Physics and Earth Science Department, Via Saragat 1, 44122 Ferrara (Italy)

    2014-09-26T23:59:59.000Z

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

  16. Device Architecture Simplification of Laser Pattering in High-Volume Crystalline Silicon Solar Cell Fabrication using Intensive Computation for Design and Optimization

    SciTech Connect (OSTI)

    Grupp Mueller, Guenther [SolarWorld; Herfurth, Hans [Fraunhofer CLT; Dunham, Scott [University of Washington; Xu, Baomin [PARC

    2013-11-15T23:59:59.000Z

    Prices of Si based solar modules have been continuously declining in recent years. Goodrich is pointing out that a significant portion of these cost reductions have come about due to ?economies of scale? benefits, but there is a point of diminishing returns when trying to lower cost by simply expanding production capacity [1]. Developing innovative high volume production technologies resulting in an increase of conversion efficiency without adding significant production cost will be necessary to continue the projected cost reductions. The Foundational Program to Advance Cell Efficiency (F-PACE) is seeking to achieve this by closing the PV efficiency gap between theoretical achievable maximum conversion efficiency - 29% for c-Si - and the current typical production - 18.5% for a typical full area back contact c-Si Solar cell ? while targeting a module cost of $0.50/Watt . The research conducted by SolarWorldUSA and it?s partners within the FPACE framework focused on the development of a Hybrid metal-wrap-through (MWT) and laser-ablated PERC solar cell design employing a extrusion metallization scheme to achieve >20% efficient devices. The project team was able to simulate, develop and demonstrate the technologies necessary to build p-type MWT PERC cells with extruded front contacts. Conversion efficiencies approaching 20% were demonstrated and a path for further efficiency improvements identified. A detailed cost of ownership calculation for such a device was based on a NREL cost model and is predicting a $/Watt cost below 85 cents on a 180 micron substrate. Several completed or planned publications by SolarWorldUSA and our partners are based on the research conducted within this project and are adding to a better understanding of the involved technologies and materials. Several aspects and technologies of the proposed device have been assessed in regards to technical effectiveness and economic feasibility. It has been shown in a pilot demonstration with wafer thicknesses down to 120 micron that further wafer thickness reduction is only economically viable if handling and contact formation limitations are addressed simultaneously. Furthermore the project partners assessed and demonstrated the feasibility of processing wafers with vias connecting front and back sides through a PERC cell process and aligning and connecting those vias with a non-contact metallization. A close cooperation between industry and institutes of higher education in the Pacific Northwest as shown in this project is of direct benefit to the public and is contributing to the education of the next generation of PV engineers and scientist.

  17. Process and apparatus for casting multiple silicon wafer articles

    DOE Patents [OSTI]

    Nanis, Leonard (Palo Alto, CA)

    1992-05-05T23:59:59.000Z

    Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

  18. aluminum silicon titanium: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    aluminum Paris-Sud XI, Universit de 7 HIGH-EFFICIENCY BACK-JUNCTION SILICON SOLAR CELL WITH AN IN-LINE EVAPORATED ALUMINUM FRONT GRID Renewable Energy Websites Summary:...

  19. Understanding and improving hole transport in hydrogenated amorphous silicon photovoltaics

    E-Print Network [OSTI]

    Johlin, Eric (Eric Carl)

    2014-01-01T23:59:59.000Z

    While hydrogenated amorphous silicon (a-Si:H) solar cells have been studied extensively for the previous four decades, the low performance of the devices is still not well understood. The poor efficiency (below 10%, even ...

  20. Metal-Insulating-Semi-Incorporation of Silicon Nanoparticles into

    E-Print Network [OSTI]

    Foundation Research Experience for Undergraduates under grant number DMR-1063150, Renewable Energy Materials Research Science and Engineering Center under grant number DMR-0820518 and the Department of Energy SunMetal-Insulating-Semi- Conductor Incorporation of Silicon Nanoparticles into Silicon Based Solar

  1. IMPROVED SPECTRAL RESPONSE OF SILICONE ENCAPSULANTED PHOTOVOLTAIC MODULES

    E-Print Network [OSTI]

    IMPROVED SPECTRAL RESPONSE OF SILICONE ENCAPSULANTED PHOTOVOLTAIC MODULES Nick E. Powell 1* , Byung the benefit of using optically superior silicone encapsulant materials over the incumbent ethylene vinyl in the UV region of the solar spectrum. Single cell mini-modules were prepared using two different

  2. Transition metal co-precipitation mechanisms in silicon T. Buonassisi a,*, M. Heuer a,1

    E-Print Network [OSTI]

    , Argonne, IL 60439, USA Received 14 March 2007; received in revised form 9 July 2007; accepted 11 July 2007­silicon droplets may form within the silicon matrix, possibly with the potential to getter additional metal atoms is key to achieving high per- formance silicon-based devices, e.g., integrated circuits and solar cells

  3. Chemical technology news from across RSC Publishing. Printing solar panels

    E-Print Network [OSTI]

    Rogers, John A.

    Publishing Chemical technology news from across RSC Publishing. Printing solar panels 22 January size) silicon microcells that connect together to form flexible solar panels. By stamping hundreds solar panels 2/8/2010http://www.rsc.org/Publishing/ChemTech/Volume/2010/02/printing_solar.asp #12;Page 2

  4. Microstructured surface design for omnidirectional antireflection coatings on solar cells

    E-Print Network [OSTI]

    Zhou, Weidong

    Microstructured surface design for omnidirectional antireflection coatings on solar cells Weidong to current crystalline silicon solar cells, as well as future thin film, quantum dot, and organic solar cells for light collection is vital in achieving high performance solar cells.1 An ideal antireflec- tion AR

  5. Measurement of light capture in solar cells from silver- and tin-plated patterned bus bars

    E-Print Network [OSTI]

    Winiarz, Christine Eve

    2007-01-01T23:59:59.000Z

    Bus bars on solar cells shade silicon from light. When the bus bars are patterned, they can reflect light back onto the silicon using total internal reflection. These patterned bus bars are tin plated and produce 1-2.5% ...

  6. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, 1 May 1991--30 April 1992

    SciTech Connect (OSTI)

    Gordon, R.G. [Harvard Univ., Cambridge, MA (United States). Dept. of Chemistry

    1993-04-01T23:59:59.000Z

    This report describes work to improve the performance of solar cells by improving the electrical and optical properties of their transparent conducting oxides (TCO) layers. Boron-doped zinc-oxide films were deposited by atmospheric pressure chemical vapor deposition in a laminar-flow reactor from diethyl zinc, tert-butanol, and diborane in the temperature range between 300{degrees}C and 420{degrees}C. When the deposition temperature was above 320{degrees}C, both doped and undoped films have highly oriented crystallites with their c-axes perpendicular to the substrate plane. Films deposited from 0.07% diethyl zinc and 2.4% tert-butanol have electron densities between 3.5 {times} 10{sup 20} cm{sup {minus}3} and 5.5 {times} 10{sup 20} cm{sup {minus}3}, conductivities between 250 {Omega}{sup {minus}1} and 2500 {Omega}{sup {minus}1} and mobilities between 2.5 cm{sup 2}/V-s and 35.0 cm{sup 2}/V-s, depending on dopant concentration, film thickness, and deposition temperature. Optical measurements show that the maximum infrared reflectance of the doped films is close to 90%, compared to about 20% for undoped films. Film visible absorption and film conductivity were found to increase with film thickness. The ratio of conductivity to visible absorption coefficient for doped films was between 0.1 {Omega} and 1.1 {Omega}{sup {minus}1}. The band gap of the film changes from 3.3 eV to 3.7 eV when the film is doped with 0.012% diborane.

  7. Review paper: Toward highly efficient quantum-dot-and dye-sensitized solar cells

    E-Print Network [OSTI]

    Park, Byungwoo

    Review paper: Toward highly efficient quantum-dot- and dye-sensitized solar cells Hongsik Choi Interface control Light harvesting Tandem solar cell a b s t r a c t Dye- and quantum-dot-sensitized solar technologies of silicon-based solar cells should be resolved [7]. Dye-sensitized solar cells (DSSCs) have been

  8. Hole-blocking Ti02/Silicon Heterojunction for Silicon PhotovoItaics Sushobhan Avasthi\\ Will McClain2, Jeffrey Schwarti, and James C. Sturm1

    E-Print Network [OSTI]

    photovoltaics. One possible approach to low-cost photovoltaics is though a merged TiOz/crystalline-silicon solar. Motivated by similar arguments, we recently demonstrated a 10% effIcient solar cell using an electron deposited as before (Fig 4a). We also examined methods to the reduce 10 of the Ti02/p-Si solar cell because

  9. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

    2001-01-01T23:59:59.000Z

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  10. Performance Testing using Silicon Devices - Analysis of Accuracy: Preprint

    SciTech Connect (OSTI)

    Sengupta, M.; Gotseff, P.; Myers, D.; Stoffel, T.

    2012-06-01T23:59:59.000Z

    Accurately determining PV module performance in the field requires accurate measurements of solar irradiance reaching the PV panel (i.e., Plane-of-Array - POA Irradiance) with known measurement uncertainty. Pyranometers are commonly based on thermopile or silicon photodiode detectors. Silicon detectors, including PV reference cells, are an attractive choice for reasons that include faster time response (10 us) than thermopile detectors (1 s to 5 s), lower cost and maintenance. The main drawback of silicon detectors is their limited spectral response. Therefore, to determine broadband POA solar irradiance, a pyranometer calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under clear-sky conditions with respect to a broadband reference radiometer. The pyranometer is then used for various scenarios including varying airmass, panel orientation and atmospheric conditions. This would not be an issue if all irradiance wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately, the scattering and absorption signature varies widely with wavelength and the calibration factor for the silicon photodiode pyranometer is not appropriate for other conditions. This paper reviews the issues that will arise from the use of silicon detectors for PV performance measurement in the field based on measurements from a group of pyranometers mounted on a 1-axis solar tracker. Also we will present a comparison of simultaneous spectral and broadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.

  11. Fabrication of a luminescent solar concentrator that minimizes self-absorption losses using inter-chromophore energy transfer

    E-Print Network [OSTI]

    Currie, Michael James

    2007-01-01T23:59:59.000Z

    The projected need for carbon-free power during this century is immense. Solar power offers the largest resource base to supply this need, but in light of recent silicon shortages, it is an open question whether silicon ...

  12. ForPeerReview Hybrid structures of porous silicon and conjugated polymers

    E-Print Network [OSTI]

    Asscher, Micha

    based solar cells suffer from a poor efficiency-to-cost ratio (usually defined in units of $ per k polymers that are suitable for solar cell applications. Meso-porous silicon substrates with relatively compounds require in- terfacing with other semiconductors to create hybrid, thin film solar cells (sometime

  13. Status and Future of Silicon Photovoltaics Presented at: Renewable energies in the service of humanity: the

    E-Print Network [OSTI]

    Canet, Léonie

    at a time 0.5 watts each $100/watt $200/watt Wafered Silicon Process Polysilicon Wafer Solar Cell Solar companies Oil companies Japanese companies Japanese roof program German FIT #12;0,60 6,00 60,00 1 10 100 Shortage Excess Capacity 81% Progress Ratio Historical Module Price Experience Curve #12;Solar PV History

  14. Purified silicon production system

    DOE Patents [OSTI]

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30T23:59:59.000Z

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  15. A survey of thin-film solar photovoltaic industry & technologies

    E-Print Network [OSTI]

    Grama, Sorin

    2007-01-01T23:59:59.000Z

    A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

  16. MILESTONES TOWARD 50% EFFICIENT SOLAR CELL MODULES Allen Barnett1

    E-Print Network [OSTI]

    Honsberg, Christiana

    and a new silicon solar cell for the mid-energy photons, all while circumventing existing cost driversMILESTONES TOWARD 50% EFFICIENT SOLAR CELL MODULES Allen Barnett1 , Douglas Kirkpatrick2 LightSpin Technologies ABSTRACT: The Very High Efficiency Solar Cell (VHESC) program is developing

  17. A plasmonically enhanced polymer solar cell with goldsilica coreshell nanorods

    E-Print Network [OSTI]

    Xiong, Qihua

    to conventional silicon solar cells due to the low-cost materi- als, mechanical flexibility and solutionA plasmonically enhanced polymer solar cell with gold­silica core­shell nanorods Xiaoyan Xu: Polymer solar cells Au nanorods Metallic nanoparticles Plasmonic effects a b s t r a c t We report the use

  18. Simulations of solar cell absorption enhancement using resonant modes

    E-Print Network [OSTI]

    Grandidier, Jonathan

    Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array Jonathan Grandidier Michael G. Deceglie Dennis M. Callahan Harry A. Atwater #12;Simulations of solar cell for enhancing the absorption of thin-film amorphous silicon solar cells using periodic arrangements of resonant

  19. A Cradle to Grave Framework for Environmental Assessment of Photovoltaic Systems

    E-Print Network [OSTI]

    Zhang, Teresa; Dornfeld, David

    2010-01-01T23:59:59.000Z

    of photovoltaic modules: Comparison of mc-Si, InGaPand InGaP/mc-Si solar modules,” Prog. Photovolt: Res.multicrystalline silicon (mc-Si), InGaP and InGaP/mc-Si PV

  20. Front contact solar cell with formed emitter

    DOE Patents [OSTI]

    Cousins, Peter John

    2014-11-04T23:59:59.000Z

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  1. Front contact solar cell with formed emitter

    DOE Patents [OSTI]

    Cousins, Peter John (Menlo Park, CA)

    2012-07-17T23:59:59.000Z

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  2. Abengoa Solar, Inc. (Mojave Solar) | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Solar, Inc. (Mojave Solar) Abengoa Solar, Inc. (Mojave Solar) Abengoa Solar, Inc. (Mojave Solar) Abengoa Solar, Inc. (Mojave Solar) Abengoa Solar, Inc. (Mojave Solar) Abengoa...

  3. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1982-01-01T23:59:59.000Z

    A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

  4. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    SciTech Connect (OSTI)

    Carey, JE; Mazur, E

    2005-05-19T23:59:59.000Z

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  5. Solar Rights

    Broader source: Energy.gov [DOE]

    In June 2010, Louisiana enacted solar rights legislation (HB 751) that prohibits certain entities from unreasonably restricting a property owner from installing a solar collector. Solar collectors...

  6. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, T.F.

    1998-07-28T23:59:59.000Z

    A substrate is described for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3{times}10{sup {minus}3} ohm-cm. 4 figs.

  7. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1998-01-01T23:59:59.000Z

    A substrate for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3.times.10.sup.-3 ohm-cm.

  8. The Silicon Solar Cell Turns 50

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin Transition in the Earth'sConnect The ScienceSequence andDaryl

  9. Enabling Thin Silicon Solar Cell Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisitingContractElectron-State HybridizationSecurityDaveArgonne Leadership

  10. Method for cleaning a solar cell surface opening made with a solar etch paste

    DOE Patents [OSTI]

    Rohatgi, Ajeet; Meemongkolkiat, Vichai

    2010-06-22T23:59:59.000Z

    A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

  11. Back contact to film silicon on metal for photovoltaic cells

    DOE Patents [OSTI]

    Branz, Howard M.; Teplin, Charles; Stradins, Pauls

    2013-06-18T23:59:59.000Z

    A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

  12. NREL scientists develop near-field optical microscopy techniques for imaging solar cell junctions and identify

    E-Print Network [OSTI]

    Solar cell producers are facing urgent pressures to lower module production cost.This achievementNREL scientists develop near-field optical microscopy techniques for imaging solar cell junctions is an increasingly important issue for silicon solar cells. The issue has taken center stage now that the solar

  13. Microstructured anti-reflection surface design for the omni-directional solar cells

    E-Print Network [OSTI]

    Zhou, Weidong

    Microstructured anti-reflection surface design for the omni-directional solar cells Li Chen for the formation of hemispherical structures as an omni-directional anti-reflection (omni-AR) coating in solar cell current in such hemispherical solar cells hence enhanced to 1.5 times of bulk silicon solar cells

  14. Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur

    E-Print Network [OSTI]

    Sullivan, Joseph Timothy

    We apply soft x-ray emission spectroscopy (XES) to measure the electronic structure of crystalline silicon supersaturated with sulfur (up to 0.7 at. %), a candidate intermediate-band solar cell material. Si L[subscript ...

  15. Effective optical response of silicon to sunlight in the finite-difference time-domain method

    E-Print Network [OSTI]

    John, Sajeev

    Alexei Deinega* and Sajeev John Department of Physics, University of Toronto, 60 St. George Street simulation of light propagation and absorption in silicon in the spectral range of 300­1000 nm. Numerical precision of our model is demonstrated for Mie scattering from a silicon sphere and solar absorption

  16. Silicon Valley Solar Inc SV Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f < RAPID‎ |Rippey JumpAirPowerSilcio SA Jump to:Biodiesel Inc Jump

  17. Sandia National Laboratories: grid-tied solar inverters

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    solar inverters Sandia, DOE Energy Storage Program, GeneSiC Semiconductor, U.S. Army ARDEC: Ultra-High-Voltage Silicon Carbide Thyristors On March 29, 2013, in Capabilities,...

  18. 2010 Solar Technologies Market Report, November 2011, Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MENA Middle East and North Africa MG-Si metallurgical-grade silicon MNGSEC Martin Next Generation Solar Energy Center MOU memorandum of understanding MT metric ton MW megawatt...

  19. Glass-silicon column

    DOE Patents [OSTI]

    Yu, Conrad M.

    2003-12-30T23:59:59.000Z

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  20. Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers: Preprint

    SciTech Connect (OSTI)

    Myers, D. R.

    2011-04-01T23:59:59.000Z

    Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

  1. Recent technological advances in thin film solar cells

    SciTech Connect (OSTI)

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01T23:59:59.000Z

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  2. Silicon rich nitride for silicon based laser devices

    E-Print Network [OSTI]

    Yi, Jae Hyung

    2008-01-01T23:59:59.000Z

    Silicon based light sources, especially laser devices, are the key components required to achieve a complete integrated silicon photonics system. However, the fundamental physical limitation of the silicon material as light ...

  3. The Focusing Optics x-ray Solar Imager: FOXSI Sam Kruckera,b, Steven Christec, Lindsay Glesenera,d, Shin-nosuke Ishikawaa, Stephen

    E-Print Network [OSTI]

    California at Berkeley, University of

    University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan ABSTRACT The Focusing Optics x-ray Solar Imager. Today's leading solar HXR instrument, the Reuven Ramaty High Energy Solar Spectroscopic Imager (RHESSI, solar physics, solar flares, silicon strip detectors, grazing-incidence optics, high-energy x-ray optics

  4. Functionalized Silicone Nanospheres: Synthesis, Transition Metal...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Functionalized Silicone Nanospheres: Synthesis, Transition Metal Immobilization, and Catalytic Applications. Functionalized Silicone Nanospheres: Synthesis, Transition Metal...

  5. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, Robert A. (Albuquerque, NM); Seager, Carleton H. (Albuquerque, NM)

    1996-01-01T23:59:59.000Z

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  6. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, R.A.; Seager, C.H.

    1996-12-10T23:59:59.000Z

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  7. NRG Solar (California Valley Solar Ranch) | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Solar (California Valley Solar Ranch) NRG Solar (California Valley Solar Ranch) NRG Solar (California Valley Solar Ranch) NRG Solar (California Valley Solar Ranch) Location: San...

  8. Solar Easements

    Broader source: Energy.gov [DOE]

    Virginia's solar easement law is similar to those in effect in other states. The Virginia Solar Easements Act of 1978 allows property owners to create binding solar easements for the purpose of...

  9. Toward High-Performance Organic-Inorganic Hybrid Solar Cells: Bringing Conjugated Polymers and Inorganic Nanocrystals in Close

    E-Print Network [OSTI]

    Lin, Zhiqun

    , China ABSTRACT: Organic-inorganic hybrid solar cells composed of conjugated polymers (CPs) and inorganicToward High-Performance Organic-Inorganic Hybrid Solar Cells: Bringing Conjugated Polymers to traditional silicon solar cells due to the capacity of producing high- efficiency solar energy in a cost

  10. Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft for

    E-Print Network [OSTI]

    Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft- This paper presents an energy-harvesting system consisting of amorphous-silicon (a-Si) solar cells and thin of the energy-harvesting system. The solar module consists of solar cells in series operating at an output

  11. Superlattice cascade solar cell

    SciTech Connect (OSTI)

    Wanlass, M.W.; Blakeslee, A.E.

    1982-09-01T23:59:59.000Z

    This paper reports progress toward realization of a new cascade solar cell structure whose chief advantages over other present concepts are: use of silicon for the substrate and low bandgap cell; avoidance of the necessity of lattice matching; and incorporation of a GaAs/GaP superlattice to enhance efficiency and provide a low-resistance connecting junction. Details of the design and operation of an OMCVD system for growing this structure are presented. Results of experiments to optimize layer thickness, compositional uniformity, and surface morphology are described.

  12. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20T23:59:59.000Z

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  13. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

    1995-01-01T23:59:59.000Z

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  14. Study of surface enhanced resonant Raman spectroscopy of chromophores on unaggregated plasmonically active nanoparticles / Surface-enhanced Raman study of the interaction of the PEDOT:PSS and P3HT/PCBM components of organic polymer solar cells with plasmonically active nanoparticles

    E-Print Network [OSTI]

    Stavytska-Barba, Marina Valeriyivna

    2012-01-01T23:59:59.000Z

    S. ; Hummelen, J. C. Plastic Solar Cells. Adv. Funct. Mater.Polman, A. Plasmonic Solar Cells. Opt. Express 2008, 16, (Plasmon Enhanced Silicon Solar Cells. J. Appl. Phys. 2007,

  15. III-V Growth on Silicon Toward a Multijunction Cell

    SciTech Connect (OSTI)

    Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

    2005-11-01T23:59:59.000Z

    A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

  16. Nanoparticle-based etching of silicon surfaces

    DOE Patents [OSTI]

    Branz, Howard (Boulder, CO); Duda, Anna (Denver, CO); Ginley, David S. (Evergreen, CO); Yost, Vernon (Littleton, CO); Meier, Daniel (Atlanta, GA); Ward, James S. (Golden, CO)

    2011-12-13T23:59:59.000Z

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  17. CALIFORNIA SOLAR DATA MANUAL

    E-Print Network [OSTI]

    Berdahl, P.

    2010-01-01T23:59:59.000Z

    Estimating Unmeasured Solar Radiation Quantities . . . . . .Appendix C - Appendix 0 - Solar Radiation Glossary. ConversSolar Data a. Solar Radiation. , , . , . . , , , , . , . . .

  18. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran, E-mail: gkova@irb.hr; Pivac, Branko [Department of Materials Physics, Rudjer Boskovic Institute, Bijeni?ka 56, P.O.B. 180, HR-10002 Zagreb (Croatia)

    2014-01-28T23:59:59.000Z

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  19. Community Shared Solar with Solarize

    Broader source: Energy.gov [DOE]

    An overview of the concept behind The Solarize Guidebook, which offers neighborhoods a plan for getting volume discounts when making group purchases of rooftop solar energy systems.

  20. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal produced in the United States in 2012

    E-Print Network [OSTI]

    .44 billion. Three companies produced silicon materials in seven plants east of the Mississippi River. Ferrosilicon and metallurgical-grade silicon metal were each produced in four plants. One company produced both and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips

  1. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal produced in the United States in 2011

    E-Print Network [OSTI]

    ,400 million. Two companies produced silicon materials in seven plants east of the Mississippi River. Ferrosilicon and metallurgical-grade silicon metal were each produced in four plants. One company produced both and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips

  2. Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell

    E-Print Network [OSTI]

    Li, Tong; Jiang, Chun

    2010-01-01T23:59:59.000Z

    We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

  3. Light trapping in solar cells at the extreme coupling limit Ali Naqavi,1,2,

    E-Print Network [OSTI]

    Petitpierre, Claude

    Light trapping in solar cells at the extreme coupling limit Ali Naqavi,1,2, * Franz-Josef Haug,1 thin film silicon solar cells in the low absorption regime. We consider simultaneously wavelength.1950, 130.2790. 1. INTRODUCTION Enhancing light absorption in solar cells has been a topic of research

  4. Nanowire-Based All-Oxide Solar Cells Benjamin D. Yuhas and Peidong Yang*

    E-Print Network [OSTI]

    Yang, Peidong

    electricity cost from a silicon solar cell well above that which comes from coal- or gas-burning power plantsNanowire-Based All-Oxide Solar Cells Benjamin D. Yuhas and Peidong Yang* Department of Chemistry present an all-oxide solar cell fabricated from vertically oriented zinc oxide nanowires and cuprous oxide

  5. Solar Energy Research at the Australian National University A.W. Blakers

    E-Print Network [OSTI]

    of the cost. Some groups and companies are developing non-silicon solar cells based on materialsSolar Energy Research at the Australian National University A.W. Blakers Centre for Sustainable in the areas of photovoltaics and solar thermal energy. 1. INTRODUCTION The Centre for Sustainable Energy

  6. innovati nAward-Winning Etching Process Cuts Solar Cell Costs

    E-Print Network [OSTI]

    innovati nAward-Winning Etching Process Cuts Solar Cell Costs In general, when it comes to photovoltaic (PV) solar cells, the higher their efficiency, the higher their price tag. To increase cell-efficiency crystalline silicon solar cells based on an innovative antireflection approach that promises to significantly

  7. Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array

    E-Print Network [OSTI]

    Grandidier, Jonathan

    Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array an approach for enhancing the absorption of thin-film amorphous silicon solar cells using periodic on the temporal coupled mode theory. Keywords: Resonant Dielectric Structures, Solar cells, Nanospheres

  8. FRONTIERS ARTICLE Efficiency enhancement of copper contaminated radial pn junction solar cells

    E-Print Network [OSTI]

    Yang, Peidong

    energy represents one of the most important sustainable and renewable energy sources. The most common power from solar cells [1]. The reason is that crystalline silicon solar cell manufacturingFRONTIERS ARTICLE Efficiency enhancement of copper contaminated radial p­n junction solar cells

  9. Dual gratings for enhanced light trapping in thin-film solar cells

    E-Print Network [OSTI]

    , Ireland * christian.schuster@york.ac.uk Abstract: Thin film solar cells benefit significantly from; (350.6050) Solar energy. References and links 1. M. A. Green, J. Zhao, A. Wang, and S. R. Wenham, "Progress and outlook for high-efficiency crystalline silicon solar cells," Sol. Energy Mater. Sol. Cells 65

  10. Philadelphia, Pennsylvania: Solar in Action (Brochure), Solar...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Philadelphia, Pennsylvania: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Philadelphia, Pennsylvania: Solar in Action (Brochure),...

  11. Award-Winning Etching Process Cuts Solar Cell Costs (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-08-01T23:59:59.000Z

    NREL scientists have invented the 'black silicon' nanocatalytic wet-chemical etch, an inexpensive, one-step process that literally turns the solar cells black, allowing them to absorb more than 98% of incident sunlight. The process costs just a few cents per watt of solar-cell power-producing capacity. Increases in manufactured cell efficiencies of up to 0.8% are possible because of the reduced reflectance of black silicon. This would reduce silicon solar module costs by $5-$10 per module.

  12. Method of restoring degraded solar cells

    DOE Patents [OSTI]

    Staebler, D.L.

    1983-02-01T23:59:59.000Z

    Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200 C for at least 30 minutes restores their efficiency. 2 figs.

  13. Method of restoring degraded solar cells

    DOE Patents [OSTI]

    Staebler, David L. (Lawrenceville, NJ)

    1983-01-01T23:59:59.000Z

    Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

  14. Method of forming contacts for a back-contact solar cell

    DOE Patents [OSTI]

    Manning, Jane

    2014-07-15T23:59:59.000Z

    Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

  15. Silicon nanopatterning for device applications

    E-Print Network [OSTI]

    Oh, Young

    2012-01-01T23:59:59.000Z

    dimensional array of photovoltaic solar cells using non-such as photonic, photovoltaic, solar cells, capacitors,dimensional array of photovoltaic solar cells using non-

  16. Development of concentrator solar cells

    SciTech Connect (OSTI)

    Not Available

    1994-08-01T23:59:59.000Z

    A limited pilot production run on PESC silicon solar cells for use at high concentrations (200 to 400 suns) is summarized. The front contact design of the cells was modified for operation without prismatic covers. The original objective of the contract was to systematically complete a process consolidation phase, in which all the, process improvements developed during the contract would be combined in a pilot production run. This pilot run was going to provide, a basis for estimating cell costs when produced at high throughput. Because of DOE funding limitations, the Photovoltaic Concentrator Initiative is on hold, and Applied Solar`s contract was operated at a low level of effort for most of 1993. The results obtained from the reduced scope pilot run showed the effects of discontinuous process optimization and characterization. However, the run provided valuable insight into the technical areas that can be optimized to achieve the original goals of the contract.

  17. Solar Rights

    Broader source: Energy.gov [DOE]

    Cities and counties in North Carolina generally may not adopt ordinances prohibiting the installation of "a solar collector that gathers solar radiation as a substitute for traditional energy for...

  18. Optical properties of nanostructured silicon-rich silicon dioxide

    E-Print Network [OSTI]

    Stolfi, Michael Anthony

    2006-01-01T23:59:59.000Z

    We have conducted a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization ...

  19. Decentalized solar photovoltaic energy systems

    SciTech Connect (OSTI)

    Krupka, M. C.

    1980-09-01T23:59:59.000Z

    Environmental data for decentralized solar photovoltaic systems have been generated in support of the Technology Assessment of Solar Energy Systems program (TASE). Emphasis has been placed upon the selection and use of a model residential photovoltaic system to develop and quantify the necessary data. The model consists of a reference home located in Phoenix, AZ, utilizing a unique solar cell array-roof shingle combination. Silicon solar cells, rated at 13.5% efficiency at 28/sup 0/C and 100 mW/cm/sup 2/ (AMI) insolation are used to generate approx. 10 kW (peak). An all-electric home is considered with lead-acid battery storage, dc-ac inversion and utility backup. The reference home is compared to others in regions of different insolation. Major material requirements, scaled to quad levels of end-use energy include significant quantities of silicon, copper, lead, antimony, sulfuric acid and plastics. Operating residuals generated are negligible with the exception of those from the storage battery due to a short (10-year) lifetime. A brief general discussion of other environmental, health, and safety and resource availability impacts is presented. It is suggested that solar cell materials production and fabrication may have the major environmental impact when comparing all facets of photovoltaic system usage. Fabrication of the various types of solar cell systems involves the need, handling, and transportation of many toxic and hazardous chemicals with attendant health and safety impacts. Increases in production of such materials as lead, antimony, sulfuric acid, copper, plastics, cadmium and gallium will be required should large scale usage of photovoltaic systems be implemented.

  20. The following contribution was presented at the 28. European PV Solar Energy Conference and Exhibition

    E-Print Network [OSTI]

    The following contribution was presented at the 28. European PV Solar Energy Conference on monocrystalline silicon substrates by means of PECVD within about four minutes, using an inductively coupled

  1. Integrated photonic structures for light trapping in thin-film Si solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

  2. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1980-01-01T23:59:59.000Z

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  3. Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

    DOE Patents [OSTI]

    Weber, Michael F. (St. Paul, MN)

    1991-10-08T23:59:59.000Z

    A method for preventing shorts and shunts in solar cells having in order, an insulating substrate, a conductive metal layer on the substrate, an amorphous silicon layer and a transparent conductive layer. The method includes anodic etching of exposed portions of the metal layer after deposition of the amorphous silicon and prior to depositing the transparent conductive layer.

  4. Has sempra found El Dorado in solar PVs? grid parity may now be within reach

    SciTech Connect (OSTI)

    NONE

    2009-03-15T23:59:59.000Z

    Instead of using conventional polycrystalline silicon modules that turn sunlight into electricity, these solar panels use cadmium telluride, a lower-cost semiconductor manufactured into thin-film cells that are cheaper to manufacture than their silicon-based counterparts. Electricity is being produced at costs as low as 7.5 {cents}/kWh.

  5. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

    DOE Patents [OSTI]

    Pankove, J.I.; Wu, C.P.

    1982-03-30T23:59:59.000Z

    A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.

  6. FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE and X. Deng1,2

    E-Print Network [OSTI]

    Deng, Xunming

    FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE SUBSTRATES A. Vijh1,2 , X. Yang1 , W encountered during fabrication of triple junction a-Si solar cells on polyimide substrates is the adhesion silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex

  7. 62 Journal of Student Research in Environmental Science at Appalachian Site Suitability Analysis for a Solar Farm

    E-Print Network [OSTI]

    Thaxton, Christopher S.

    ]. The semiconductor materials typically used are crystalline-silicone, containing monocrystalline or polycrystalline cells, or thin-film, containing materials including CdTe and copper indium gal- lium selenide, solar modules [2]. Although thin- film solar panels are typically less expensive than c-Si solar panels

  8. Floating Silicon Method

    SciTech Connect (OSTI)

    Kellerman, Peter

    2013-12-21T23:59:59.000Z

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  9. Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion

    SciTech Connect (OSTI)

    None

    2010-09-01T23:59:59.000Z

    ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

  10. Reducing the Cost of Solar Cells

    SciTech Connect (OSTI)

    Scanlon, B.

    2012-04-01T23:59:59.000Z

    Solar-powered electricity prices could soon approach those of power from coal or natural gas thanks to collaborative research with solar startup Ampulse Corporation at the National Renewable Energy Laboratory. Silicon wafers account for almost half the cost of today's solar photovoltaic panels, so reducing or eliminating wafer costs is essential to bringing prices down. Current crystalline silicon technology converts energy in a highly efficient manner; however, that technology is manufactured with processes that could stand some improvement. The industry needs a method that is less complex, creates less waste and uses less energy. First, half the refined silicon is lost as dust in the wafer-sawing process, driving module costs higher. Wafers are sawn off of large cylindrical ingots, or boules, of silicon. A typical 2-meter boule loses as many as 6,000 potential wafers during sawing. Second, the wafers produced are much thicker than necessary. To efficiently convert sunlight into electricity, the wafers need be only one-tenth the typical thickness. NREL, the Oak Ridge National Laboratory and Ampulse have partnered on an approach to eliminate this waste and dramatically lower the cost of the finished solar panels. By using a chemical vapor deposition process to grow the silicon on inexpensive foil, Ampulse is able to make the solar cells just thick enough to convert most of the solar energy into electricity. No more sawdust - and no more wasting refined silicon materials. NREL developed the technology to grow high-quality silicon and ORNL developed the metal foil that has the correct crystal structure to support that growth. Ampulse is installing a pilot manufacturing line in NREL's Process Development Integration Laboratory, where solar companies can work closely with lab scientists on integrated equipment to answer pressing questions related to their technology development, as well as rapidly overcoming R and D challenges and risk. NREL's program is focused on transformative innovation in the domestic PV industry. With knowledge and expertise acquired from the PDIL pilot production line tools, Ampulse plans to design a full-scale production line to accommodate long rolls of metal foil. The Ampulse process 'goes straight from pure silicon-containing gas to high-quality crystal silicon film,' said Brent Nelson, the operational manager for the Process Development Integration Laboratory. 'The advantage is you can make the wafer just as thin as you need it - 10 microns or less.' Most of today's solar cells are made out of wafer crystalline silicon, though thin-film cells made of more exotic elements such as copper, indium, gallium, arsenic, cadmium, tellurium and others are making a strong push into the market. The advantage of silicon is its abundance, because it is derived from sand. Silicon's disadvantage is that purifying it into wafers suitable for solar cells can be expensive and energy intensive. Manufacturers add carbon and heat to sand to produce metallurgical-grade silicon, which is useful in other industries, but not yet suitable for making solar cells. So this metallurgical-grade silicon is then converted to pure trichlorosilane (SiCl3) or silane (SiH4) gas. Typically, the purified gas is then converted to create a silicon feedstock at 1,000 degrees Celsius. This feedstock is melted at 1,414 C and recrystallized into crystal ingots that are finally sawed into wafers. The Ampulse method differs in that it eliminates the last two steps in the traditional process and works directly with the silane gas growing only the needed silicon right onto a foil substrate. A team of NREL scientists had developed a way to use a process called hot-wire chemical vapor deposition to thicken silicon wafers with near perfect crystal structure. Using a hot tungsten filament much like the one found in an incandescent light bulb, the silane gas molecules are broken apart and deposited onto the wafer using the chemical vapor deposition technique at about 700 C - a much lower temperature than needed to make the wafer. The hot filament dec

  11. Influence of solar heating on the performance of integrated solar cell microstrip patch antennas

    SciTech Connect (OSTI)

    Roo-Ons, M.J.; Shynu, S.V.; Ammann, M.J. [Antenna and High Frequency Research Centre, School of Electronic and Communications Engineering, Dublin Institute of Technology (Ireland); Seredynski, M. [Institute of Heat Engineering, Warsaw University of Technology (Poland); McCormack, S.J. [Dept. of Civil, Structural and Environmental Engineering, Trinity College Dublin (Ireland); Norton, B. [Dublin Energy Lab., Focas Institute, Dublin Institute of Technology (Ireland)

    2010-09-15T23:59:59.000Z

    The integration of microstrip patch antennas with photovoltaics has been proposed for applications in autonomous wireless communication systems located on building facades. Full integration was achieved using polycrystalline silicon solar cells as both antenna ground plane and direct current power generation in the same device. An overview of the proposed photovoltaic antenna designs is provided and the variation characterised of the electromagnetic properties of the device with temperature and solar radiation. Measurements for both copper and solar antennas are reported on three different commercial laminates with contrasting values for thermal coefficient of the dielectric constant. (author)

  12. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, John W. (Albuquerque, NM)

    1994-01-01T23:59:59.000Z

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  13. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, J.W.

    1994-01-11T23:59:59.000Z

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  14. Solar forecasting review

    E-Print Network [OSTI]

    Inman, Richard Headen

    2012-01-01T23:59:59.000Z

    and forecasting of solar radiation data: a review,”forecasting of solar- radiation data,” Solar Energy, vol.sequences of global solar radiation data for isolated sites:

  15. CALIFORNIA SOLAR DATA MANUAL

    E-Print Network [OSTI]

    Berdahl, P.

    2010-01-01T23:59:59.000Z

    Estimating Unmeasured Solar Radiation Quantities . . . . . .Weather Data . . . . . , . , . . . . . . . . . .Solar DataB. l'he Solar Constant. . . . . . C. Solar Time and Standard

  16. Sandia National Laboratories: solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Test Facility NSTTF Nuclear Energy photovoltaic Photovoltaics PV Renewable Energy solar Solar Energy solar power Solar Research Solid-State Lighting SSLS Connect Contact Us RSS...

  17. Sandia National Laboratories: solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NSTTF Nuclear Energy photovoltaic Photovoltaics PV Renewable Energy solar Solar Energy solar power Solar Research Solid-State Lighting SSLS Connect Contact Us RSS Google+...

  18. Fabrication of porous silicon membranes 

    E-Print Network [OSTI]

    Yue, Wing Kong

    1988-01-01T23:59:59.000Z

    . Porous silicon layer is formed by the local dissolution which is initiated by the surface layer and is promoted by the hindrance layers composed of the silicic acid. Local etching or local dissolution is the cause of forming porous structure... of pores were 25 to 45 A with a mean value of 38 A. Microstructure of porous silicon studied by Besle et al. showed two distinct 17 patterns: the structure pattern of porous silicon film on heavily doped silicon and that on slightly doped silicon [26...

  19. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31T23:59:59.000Z

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  20. Solar Car

    SciTech Connect (OSTI)

    None

    2010-01-01T23:59:59.000Z

    Des Moines Central Academy Middle School students compete in the Solar Car Challenge at the National Science Bowl, May 2 in Washington D.C.

  1. Solar Rights

    Broader source: Energy.gov [DOE]

    Maine law requires that any municipal ordinance, bylaw, or regulation adopted after September 30, 2009 regulating solar energy devices on residential property follow certain requirements. The rules...

  2. Progress in passive solar energy systems. Volume 8. Part 1

    SciTech Connect (OSTI)

    Hayes, J.; Andrejko, D.A.

    1983-01-01T23:59:59.000Z

    This book presents the papers given at a conference sponsored by the US DOE, the Solar Energy Research Institute, SolarVision, Inc., and the Southern California Solar Energy Society. The topics considered at the conference included sizing solar energy systems for agricultural applications, a farm scale ethanol production plant, the EEC wind energy RandD program, the passive solar performance assessment of an earth-sheltered house, the ARCO 1 MW photovoltaic power plant, the performance of a dendritic web photovoltaic module, second generation point focused concentrators, linear fresnel lens concentrating photovoltaic collectors, photovoltaic conversion efficiency, amorphous silicon thin film solar cells, a photovoltaic system for a shopping center, photovoltaic power generation for the utility industry, spectral solar radiation, and the analysis of insolation data.

  3. Structural and Optical Investigations of GaN-Si Interface for a Heterojunction Solar Cell

    SciTech Connect (OSTI)

    Williams, Joshua J.; Jeffries, April M.; Bertoni, Mariana I.; Williamson, Todd L.; Bowden, Stuart G.; Honsberg, Christiana B.

    2014-06-08T23:59:59.000Z

    In recent years the development of heterojunction silicon based solar cells has gained much attention, lea largely by the efforts of Panasonic’s HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. In this paper we report upon the use of gallium nitride, grown by MBE at “low temperatures” (~200°C), on silicon wafers as one possible candidate for making a heterojunction solar cell; the first approximation of band alignments between GaN and Si; and the material quality as determined by X-ray diffraction.

  4. Hybrid Silicon Evanescent Lasers John E. Bowersa

    E-Print Network [OSTI]

    Bowers, John

    [2]. Finally a 110 nm thick n-doped InP spacer is used as a bonding interface to silicon. The silicon factors of the silicon waveguide and the QWs can be manipulated by the silicon waveguide dimensions silicon waveguide. For the fabricated waveguide dimensions of a 0.7 µm height (H) and 0.6 µm rib

  5. Process feasibility study in support of silicon material Task I. Final report, October 1, 1975-February 6, 1981

    SciTech Connect (OSTI)

    Yaws, C.L.; Li, K.Y.; Hopper, J.R.; Fang, C.S.; Hansen, K.C.

    1981-02-06T23:59:59.000Z

    The Low-Cost Solar Array (LSA) Project is directed toward effective cost reduction in the production of silicon for solar cells. Results are presented for process system properties, chemical engineering and economic analyses of the new technologies and processes being developed for the production of lower cost silicon for solar cells. Major physical, thermodynamic and transport property data are reported for the following silicon source and processing chemical materials: silane, silicon tetrachloride, trichlorosilane, dichlorosilane, silicon tetrafluoride, and silicon. The property data are reported for critical temperature, critical pressure, critical volume, vapor pressure, heat of vaporization, heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation and Gibb's free energy of formation. Chemical engineering analyses involving the preliminary process design of a plant (1000 MT/yr capacity) to produce silicon via the technology under consideration were accomplished for the following processes: UCC silane process for silicon, BCL process for silicon, conventional polysilicon process (Siemens technology), SiI/sub 4/ decomposition process, and DCS process (dichlorosilane).Major activities in chemical engineering analyses include base case conditions, reaction chemistry, process flowsheet, material balance, energy balance, property data, equipment design, major equipment list, production labor and forward for economic analysis. The process design package provides detailed data for raw materials, utilities, major process equipment and production labor requirements necessary for polysilicon production in each process. Using detailed data from the process design package, economic analyses for a 1000 MT/yr silicon plant were accomplished. Primary results from the economic analyses included plant capital investment and product cost. Results are presented and discussed. (WHK)

  6. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, Rishi (Ithaca, NY); Baik, Sunggi (Ithaca, NY)

    1984-12-11T23:59:59.000Z

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  7. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, R.; Baik, S.

    1984-12-11T23:59:59.000Z

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  8. Making silicon stronger.

    SciTech Connect (OSTI)

    Boyce, Brad Lee

    2010-11-01T23:59:59.000Z

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

  9. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1992-01-01T23:59:59.000Z

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  10. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17T23:59:59.000Z

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  11. Status and future of government-supported amorphous silicon research in the United States

    SciTech Connect (OSTI)

    Wallace, W.L.; Sabisky, E.S.

    1986-06-01T23:59:59.000Z

    The Amorphous Silicon Research Project (ASRP) was established at the Solar Energy Research Institute in 1983 and is responsible for all US Department of Energy government supported research activities in the field of amorphous silicon photovoltaics. The objectives and research directions of the project have been established by a Five-Year Research Plan, which was developed at SERI in cooperation with the Department of Energy in 1984 and is divided into research on single-junction and multi-junction solar cells. DOE/SERI has recently initiated a new three year program to be performed in collaboration with US industry to perform work on high efficiency amorphous silicon solar cells and submodules. The objectives of this initiative are: (i) to achieve 18% efficiencies for small area multi-junction amorphous silicon cells, and (ii) to achieve amorphous silicon submodule efficiencies in the 10 to 13% range for single-junction and multi-junction submodule configurations over areas of at least 1000 cm/sup 2/.

  12. Enhanced efficiency of thin film solar cells using a shifted dual grating plasmonic structure

    E-Print Network [OSTI]

    Levy, Uriel

    .5403) Plasmonics; (310.2790) Guided waves. References and links 1. O. Morton, "Solar energy: A new day dawning Society of America OCIS codes: (350.6050) Solar energy; (050.2770) Gratings; (310.0310) Thin films; (250? Silicon valley sunrise," Nature 443(7107), 19­22 (2006). 2. M. A. Green and S. Pillai, "Harnessing

  13. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13T23:59:59.000Z

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  14. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01T23:59:59.000Z

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  15. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21T23:59:59.000Z

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  16. Fabrication and properties of microporous silicon

    E-Print Network [OSTI]

    Shao, Jianzhong

    1994-01-01T23:59:59.000Z

    Microporous silicon layers were fabricated by electrochemical etching of single crystalline silicon wafers in HF-ethanol solutions. The pore properties of porous silicon were examined by physical adsorption of nitrogen and the relationship between...

  17. Fabrication and properties of microporous silicon 

    E-Print Network [OSTI]

    Shao, Jianzhong

    1994-01-01T23:59:59.000Z

    Microporous silicon layers were fabricated by electrochemical etching of single crystalline silicon wafers in HF-ethanol solutions. The pore properties of porous silicon were examined by physical adsorption of nitrogen and the relationship between...

  18. Vertical silicon nanowire arrays for gas sensing

    E-Print Network [OSTI]

    Zhao, Hangbo

    2014-01-01T23:59:59.000Z

    The goal of this research was to fabricate and characterize vertically aligned silicon nanowire gas sensors. Silicon nanowires are very attractive for gas sensing applications and vertically aligned silicon nanowires are ...

  19. Fabrication of porous silicon membranes

    E-Print Network [OSTI]

    Yue, Wing Kong

    1988-01-01T23:59:59.000Z

    efficiencies. The silicon difluoride, SiFq, is an unstable substance. It reacts with hydrofluoric acid forming silicic acid (HqSiFs) and hydrogen gas(Hq): SiFs + 2HF ? & SiF4+ Hs, (2) Si F4 + 2 H F ~ Hr Si Fs. In dilute HF solution, silicon can also react.... In step 1, the surface of silicon is covered with fluorine ions. In step 2, when an electric field is applied across the interface, holes move towards the surface. In step 3, some of the holes are trapped at the surface, and they weaken the silicon...

  20. Multi-junction solar cell device

    DOE Patents [OSTI]

    Friedman, Daniel J. (Lakewood, CO); Geisz, John F. (Wheat Ridge, CO)

    2007-12-18T23:59:59.000Z

    A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

  1. Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon

    E-Print Network [OSTI]

    Schiff, Eric A.

    Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon KAI ZHU Solar, Toano, VA 23168 USA ABSTRACT We present infrared charge-modulation absorption spectra have been developing an infrared modulation spectroscopy technique that probes the optical spectra

  2. Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

    SciTech Connect (OSTI)

    Steffens, S.; Becker, C., E-mail: christiane.becker@helmholtz-berlin.de; Amkreutz, D.; Schnegg, A.; Abou-Ras, D.; Lips, K.; Rech, B. [Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin (Germany); Klossek, A. [Brandenburgische Technische Universität, Cottbus (Germany); Kittler, M. [Brandenburgische Technische Universität, Cottbus (Germany); IHP Microelectronics, Frankfurt (Oder) (Germany); Chen, Y.-Y. [Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin (Germany); Green Energy and Environment Research Labs, Industrial Technology Research Institute, Hsinchu, Taiwan (China); Klingsporn, M. [IHP Microelectronics, Frankfurt (Oder) (Germany)

    2014-07-14T23:59:59.000Z

    A wide variety of liquid and solid phase crystallized silicon films are investigated in order to determine the performance limiting defect types in crystalline silicon thin-film solar cells. Complementary characterization methods, such as electron spin resonance, photoluminescence, and electron microscopy, yield the densities of dangling bond defects and dislocations which are correlated with the electronic material quality in terms of solar cell open circuit voltage. The results indicate that the strongly differing performance of small-grained solid and large-grain liquid phase crystallized silicon can be explained by intra-grain defects like dislocations rather than grain boundary dangling bonds. A numerical model is developed containing both defect types, dislocations and dangling bonds, describing the experimental results.

  3. Periodically multilayered planar optical concentrator for photovoltaic solar cells Manuel E. Solano, Muhammad Faryad, Peter B. Monk, Thomas E. Mallouk, and Akhlesh Lakhtakia

    E-Print Network [OSTI]

    Periodically multilayered planar optical concentrator for photovoltaic solar cells Manuel E. Solano performance of amorphous silicon solar cells via scattering from surface plasmon polaritons in nearby metallic concentrator for photovoltaic solar cells Manuel E. Solano,1 Muhammad Faryad,2 Peter B. Monk,1 Thomas E

  4. 28th European Photovoltaic Solar Energy Conference and Exhibition 1.BO11.2 DOWN CONVERTER DEVICE COMBINING RARE-EARTH DOPED THIN LAYER AND PHOTONIC

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    COMBINING RARE-EARTH DOPED THIN LAYER AND PHOTONIC CRYSTAL FOR C-SI BASED SOLAR CELL Thierry Deschamps1 of the spectrum, hence demonstrating the relevance of such an approach. Keywords: Thin Film Solar Cell reducing the use of raw material, meaning the PV cell cost. Concerning the crystalline silicon-based solar

  5. DISORDER ENGINEERING FOR LIGHT-TRAPPING IN THIN-FILM SOLAR CELLS P. Kowalczewski, M. Liscidini, and L.C. Andreani

    E-Print Network [OSTI]

    at the significantly reduced computational cost. 3 TAILORING THE ROUGHNESS FOR LIGHT- TRAPPING Solar cell structureDISORDER ENGINEERING FOR LIGHT-TRAPPING IN THIN-FILM SOLAR CELLS P. Kowalczewski, M. Liscidini: In this work we focus on randomly rough textures for light-trapping in thin-film silicon solar cells. We use

  6. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1998-06-02T23:59:59.000Z

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  7. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1996-01-30T23:59:59.000Z

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  8. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1996-01-01T23:59:59.000Z

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  9. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1998-06-02T23:59:59.000Z

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  10. Nanoscale Engineering Of Radiation Tolerant Silicon Carbide....

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Of Radiation Tolerant Silicon Carbide. Nanoscale Engineering Of Radiation Tolerant Silicon Carbide. Abstract: Radiation tolerance is determined by how effectively the...

  11. Solar Rights

    Broader source: Energy.gov [DOE]

    According to state law, effective July 1, 2008, community associations in Virginia generally may not prohibit a homeowner from installing or using a solar energy collection device on their property...

  12. Photonic crystal enhanced silicon cell based thermophotovoltaic systems

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yeng, Yi Xiang; Chan, Walker R.; Rinnerbauer, Veronika; Stelmakh, Veronika; Senkevich, Jay J.; Joannopoulos, John D.; Soljacic, Marin; ?elanovi?, Ivan

    2015-01-01T23:59:59.000Z

    We report the design, optimization, and experimental results of large area commercial silicon solar cell based thermophotovoltaic (TPV) energy conversion systems. Using global non-linear optimization tools, we demonstrate theoretically a maximum radiative heat-to-electricity efficiency of 6.4% and a corresponding output electrical power density of 0.39 W cm?² at temperature T = 1660 K when implementing both the optimized two-dimensional (2D) tantalum photonic crystal (PhC) selective emitter, and the optimized 1D tantalum pentoxide – silicon dioxide PhC cold-side selective filter. In addition, we have developed an experimental large area TPV test setup that enables accurate measurement of radiative heat-to-electricity efficiency formore »any emitter-filter-TPV cell combination of interest. In fact, the experimental results match extremely well with predictions of our numerical models. Our experimental setup achieved a maximum output electrical power density of 0.10W cm?² and radiative heat-to-electricity efficiency of 1.18% at T = 1380 K using commercial wafer size back-contacted silicon solar cells.« less

  13. Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

    DOE Patents [OSTI]

    Ciszek, T.F.

    1984-09-12T23:59:59.000Z

    Apparatus is provided for continuously forming a silicon crystal sheet from a silicon rod in a non-crucible environment. The rod is rotated and fed toward an RF coil in an inert atmosphere so that the upper end of the rod becomes molten and the silicon sheet crystal is pulled therefrom substantially horizontally in a continuous strip. A shorting ring may be provided around the rod to limit the heating to the upper end only. Argon gas can be used to create the inert atmosphere within a suitable closed chamber. By use of this apparatus and method, a substantially defect-free silicon crystal sheet is formed which can be used for micro-circuitry chips or solar cells.

  14. EELE408 Photovoltaics Lecture 11: Solar Cell Parameters

    E-Print Network [OSTI]

    Kaiser, Todd J.

    mV ­ Commercial silicon solar cells 500-600 mV 11 Power & IV Curve · Power (Watts) is the rate · The power output by a source is the product of the current supplied and the voltage at which the current was supplied 12 · Power output = Source voltage x Source current ­ P=V x I (Watts = Joules/second) = (Volts

  15. NATURE NANOTECHNOLOGY | VOL 9 | JANUARY 2014 | www.nature.com/naturenanotechnology 19 rystalline silicon (c-Si) is the most important semiconduc-

    E-Print Network [OSTI]

    applications. As a result, around 90% of solar panels in use today are based on silicon. The optical properties present maturity. Together with its 1.1-eV bandgap -- optimal for capturing the solar spectrum using, highly integrated and low-cost devices. For photovoltaics applications, higher optoelectronic performance

  16. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15T23:59:59.000Z

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  17. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Mendez, Victor P. (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1988-01-01T23:59:59.000Z

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  18. CALIFORNIA SOLAR DATA MANUAL

    E-Print Network [OSTI]

    Berdahl, P.

    2010-01-01T23:59:59.000Z

    for Reno, Nevada . . . . . (Q) Solar Data for China Lake/using Nominal Solar Profiles China Lake/Inyokern ANGLE OFStations - China Lake, Edwards Monthly Latitude: Jan SOLAR

  19. Solar Thermal Powered Evaporators

    E-Print Network [OSTI]

    Moe, Christian Robert

    2015-01-01T23:59:59.000Z

    and C. Y. Zhao, "A review of solar collectors and thermalenergy storage in solar thermal applications," Appliedon photovoltaic/thermal hybrid solar technology," Applied

  20. Solar forecasting review

    E-Print Network [OSTI]

    Inman, Richard Headen

    2012-01-01T23:59:59.000Z

    Figure 6.3: Birds-eye view of solar array deployment siteBirds-eye 7. Birds-eye view of of solar solar array array

  1. Solar powered desalination system

    E-Print Network [OSTI]

    Mateo, Tiffany Alisa

    2011-01-01T23:59:59.000Z

    2008, uses concentrated solar power to split water. Figurethe main reason the potential for solar power is boundless.a clean energy source, solar power is inexhaustible, fairly

  2. CALIFORNIA SOLAR DATA MANUAL

    E-Print Network [OSTI]

    Berdahl, P.

    2010-01-01T23:59:59.000Z

    for Daily Solar Radiation Data. Proceedings of the 1977from total horizontal radiation data, they both suffer froma. SOLAR RADIATION Solar radiation data provide a measure of

  3. Solar forecasting review

    E-Print Network [OSTI]

    Inman, Richard Headen

    2012-01-01T23:59:59.000Z

    2.1.2 European Solar Radiation Atlas (ESRA)for supplementing solar radiation network data,” FinalEstimating incident solar radiation at the surface from geo-

  4. Solar forecasting review

    E-Print Network [OSTI]

    Inman, Richard Headen

    2012-01-01T23:59:59.000Z

    2.1.2 European Solar Radiation Atlas (ESRA)2.4 Evaluation of Solar Forecasting . . . . . . . . .2.4.1 Solar Variability . . . . . . . . . . . . .

  5. Residential Solar Valuation Rates

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Residential Solar Valuation Rates Karl R. Rbago Rbago Energy LLC 1 The Ideal Residential Solar Tariff Fair to the utility and non-solar customers Fair compensation to...

  6. CALIFORNIA SOLAR DATA MANUAL

    E-Print Network [OSTI]

    Berdahl, P.

    2010-01-01T23:59:59.000Z

    Solar Energy Laboratory 1303 Engineering Research Building UniversitySolar Energy Laboratory 1303 Engineering Research laboratory UniversitySolar Energy Group, Energy and Lawrence Berkeley Laboratory University

  7. Nanocrystal Solar Cells

    E-Print Network [OSTI]

    Gur, Ilan

    2006-01-01T23:59:59.000Z

    Nov, 2005). Chapter 4 Hybrid solar cells with 3-dimensionalinorganic nanocrystal solar cells 5.1 Introduction In recentoperation of organic based solar cells and distinguish them

  8. Sandia National Laboratories: solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    solar Molten Salt Test Loop Commissioning On October 10, 2012, in Concentrating Solar Power, EC, Energy, News, News & Events, Renewable Energy, Solar The Molten Salt Test Loop...

  9. CALIFORNIA SOLAR DATA MANUAL

    E-Print Network [OSTI]

    Berdahl, P.

    2010-01-01T23:59:59.000Z

    Data for San Vicente Reservoir (l) Solar Data for BarrettDiego Monthly Solar Data, Barrett Reservoir Latitude: Janmonth. (L) SOLAR DATA FOR BARRETT RESERVOIR Nearby Climate

  10. .beta.-silicon carbide protective coating and method for fabricating same

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA)

    1994-01-01T23:59:59.000Z

    A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or .mu.c-SiC film on the surface and produce .beta.--SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface.

  11. [beta]-silicon carbide protective coating and method for fabricating same

    DOE Patents [OSTI]

    Carey, P.G.; Thompson, J.B.

    1994-11-01T23:59:59.000Z

    A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating are disclosed. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or [mu]c-SiC film on the surface and produce [beta]-SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface. 3 figs.

  12. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

    1999-01-01T23:59:59.000Z

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  13. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

    2002-01-01T23:59:59.000Z

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  14. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOE Patents [OSTI]

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01T23:59:59.000Z

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  15. California Solar Initiative- Solar Thermal Program

    Broader source: Energy.gov [DOE]

    Originally restricted to just solar water heaters, the prorgam was expanded by CPUC Decision 13-02-018 in February 2013 to include other solar thermal technologies, including solar process heatin...

  16. Silicon nitride ceramic comprising samaria and ytterbia

    DOE Patents [OSTI]

    Yeckley, Russell L. (Oakham, MA)

    1996-01-01T23:59:59.000Z

    This invention relates to a sintered silicon nitride ceramic comprising samaria and ytterbia for enhanced toughness.

  17. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01T23:59:59.000Z

    and Photovoltaic Performance . . . . . . . . . . . . . . .Amorphous Silicon as a Photovoltaic Material 2.1.2ii Photovoltaic Model . . . . . . . . . . .

  18. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15T23:59:59.000Z

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  19. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

    1996-01-01T23:59:59.000Z

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  20. Solar Decathlon

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideo »UsageSecretary ofSmallConfidential,2 Solar Background Document 2Solar

  1. Concentrating Solar Power

    SciTech Connect (OSTI)

    Not Available

    2008-09-01T23:59:59.000Z

    Summarizes the goals and activities of the DOE Solar Energy Technologies Program efforts within its concentrating solar power subprogram.

  2. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, D.R.; Brzezinski, M.A.

    1996-06-11T23:59:59.000Z

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidation state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  3. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

    1996-01-01T23:59:59.000Z

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  4. Solar Easements & Local Option Solar Rights Laws

    Broader source: Energy.gov [DOE]

    Utah's solar easement provisions are similar to easement provisions in many other states. Parties may voluntarily enter into written solar easement contracts that are enforceable by law. An...

  5. High temperature solar selective coatings

    DOE Patents [OSTI]

    Kennedy, Cheryl E

    2014-11-25T23:59:59.000Z

    Improved solar collectors (40) comprising glass tubing (42) attached to bellows (44) by airtight seals (56) enclose solar absorber tubes (50) inside an annular evacuated space (54. The exterior surfaces of the solar absorber tubes (50) are coated with improved solar selective coatings {48} which provide higher absorbance, lower emittance and resistance to atmospheric oxidation at elevated temperatures. The coatings are multilayered structures comprising solar absorbent layers (26) applied to the meta surface of the absorber tubes (50), typically stainless steel, topped with antireflective Savers (28) comprising at least two layers 30, 32) of refractory metal or metalloid oxides (such as titania and silica) with substantially differing indices of refraction in adjacent layers. Optionally, at least one layer of a noble metal such as platinum can be included between some of the layers. The absorbent layers cars include cermet materials comprising particles of metal compounds is a matrix, which can contain oxides of refractory metals or metalloids such as silicon. Reflective layers within the coating layers can comprise refractory metal silicides and related compounds characterized by the formulas TiSi. Ti.sub.3SiC.sub.2, TiAlSi, TiAN and similar compounds for Zr and Hf. The titania can be characterized by the formulas TiO.sub.2, Ti.sub.3O.sub.5. TiOx or TiO.sub.xN.sub.1-x with x 0 to 1. The silica can be at least one of SiO.sub.2, SiO.sub.2x or SiO.sub.2xN.sub.1-x with x=0 to 1.

  6. CUTTING SOLAR RED TAPECUTTING SOLAR RED TAPE Evergreen State Solar PartnershipEvergreen State Solar Partnership

    E-Print Network [OSTI]

    CUTTING SOLAR RED TAPECUTTING SOLAR RED TAPE Evergreen State Solar PartnershipEvergreen State Solar Partnership Rooftop Solar Challenge 1 Sunshot #12;WASHINGTON PV CONTEXTWASHINGTON PV CONTEXT 285 cities, 39 Installations happen where process is easier #12;EVERGREEN STATE SOLAR PARTNERSHIP Commerce NWSEEDEdmonds

  7. Kerfless Silicon Precursor Wafer Formed by Rapid Solidification: October 2009 - March 2010

    SciTech Connect (OSTI)

    Lorenz, A.

    2011-06-01T23:59:59.000Z

    1366 Direct Wafer technology is an ultra-low-cost, kerfless method of producing crystalline silicon wafers compatible with the existing dominant silicon PV supply chain. By doubling utilization of silicon and simplifying the wafering process and equipment, Direct Wafers will support drastic reductions in wafer cost and enable module manufacturing costs < $1/W. This Pre-Incubator subcontract enabled us to accelerate the critical advances necessary to commercialize the technology by 2012. Starting from a promising concept that was initially demonstrated using a model material, we built custom equipment necessary to validate the process in silicon, then developed sufficient understanding of the underlying physics to successfully fabricate wafers meeting target specifications. These wafers, 50 mm x 50 mm x 200 ..mu..m thick, were used to make prototype solar cells via standard industrial processes as the project final deliverable. The demonstrated 10% efficiency is already impressive when compared to most thin films, but still offers considerable room for improvement when compared to typical crystalline silicon solar cells.

  8. Method of forming buried oxide layers in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir City, TN)

    2000-01-01T23:59:59.000Z

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  9. Lithium Ion Battery Performance of Silicon Nanowires With Carbon...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ion Battery Performance of Silicon Nanowires With Carbon Skin . Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin . Abstract: Silicon (Si) nanomaterials have...

  10. 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2DV.1.30 DETERMINATION OF THE BASE DOPANT CONCENTRATION OF LARGE AREA

    E-Print Network [OSTI]

    probe measurements. For alkaline textured monocrystalline silicon solar cells calculations are carried Cell, Capacitance, Base Dopant Concentration aPresent address: pv-tools GmbH, Hefehof 31, 31785 Hameln

  11. Process and apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Nanis, Leonard (Palo Alto, CA); Sanjurjo, Angel (San Jose, CA)

    1988-05-31T23:59:59.000Z

    Process for producing low cost, high purity solar grade Si wherein a reduction reaction, preferably the reduction of SiF.sub.4, by an alkali metal (Na preferred) is carried out inside a reaction chamber. The chamber wall and bottom surfaces are configured so as to facilitate the continuous separation of the products of reaction (Si and NaF) and removal of the molten salt by discharging the salt through one or more ports at the bottom of the reaction chamber. Such process is especially useful where it is desirable to discharge the reaction salt products from the reactor and retain silicon within the chamber for later removal.

  12. Low-energy tetrahedral polymorphs of carbon, silicon, and germanium

    E-Print Network [OSTI]

    Mujica, Andres; Pickard, Chris J.; Needs, Richard J.

    2015-06-08T23:59:59.000Z

    that of carbon diamond, which could be of technological importance.28–32 For silicon, the main material used so far in the fabrication of solar cells, there is interest in new phases with electronic band structures and optical properties better suited than... to the diamond structure, when the latter is viewed along its ?110? direction. In analogy to (a) (b) (c) (d) FIG. 5. Construction of P42/ncm as a network of tilted diamond-like tetrahedra. Panel (a) shows a single slab of corner-sharing regular tetrahedra...

  13. Optical Absorption Characteristics of Silicon Nanowires for Photovoltaic Applications

    E-Print Network [OSTI]

    Parkash, Vidur

    2010-01-01T23:59:59.000Z

    Solar cells have generated a lot of interest as a potential source of clean renewable energy for the future. However a big bottleneck in wide scale deployment of these energy sources remain the low efficiency of these conversion devices. Recently the use of nanostructures and the strategy of quantum confinement have been as a general approach towards better charge carrier generation and capture. In this article we have presented calculations on the optical characteristics of nanowires made out of Silicon. Our calculations show these nanowires form excellent optoelectronic materials and may yield efficient photovoltaic devices.

  14. Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a

    E-Print Network [OSTI]

    Alam, Muhammad A.

    Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk heterojunction BHJ cells, and Cu In,Ga Se2 CIGS cells. All three device types exhibit a significant shunt leakage

  15. UMORE PARK -INTEGRATING SOLAR Overview, Solar Optimization & Technologies, & Recommendations

    E-Print Network [OSTI]

    Netoff, Theoden

    : Introduction 3 UMore Park Overview 4 Solar Optimization 7 Passive Solar 8 Solar Technologies 10 District Solar research and development of renewable resource technologies. Integrating passive design techniques as wellUMORE PARK - INTEGRATING SOLAR Overview, Solar Optimization & Technologies, & Recommendations

  16. Supporting Information Light trapping in silicon nanowire solar cells

    E-Print Network [OSTI]

    Yang, Peidong

    and 15 s 10:1 NH4F:HF dip and 800 nm Al followed by 200 nm Pd sputtered to form a top electrode finger

  17. Silicon Ink Technology Offers Path to Higher Efficiency Solar...

    Broader source: Energy.gov (indexed) [DOE]

    equity investments. The Incubator program provides early-stage assistance to help startup companies cross technological barriers to commercialization while encouraging private...

  18. Japan Solar Silicon Co Ltd JSS | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, searchOf Kilauea Volcano, Hawaii | Wind Farm JumpJamestown, Colorado:

  19. Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon Solar Cells: Preprint

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem Not Found Item Not Found TheHot electron dynamics in graphene by

  20. Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon Solar Cells:

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilAElectronic InputRudolphMATERIALSInformationUniversity)WPreprint | SciTech