National Library of Energy BETA

Sample records for multicrystalline silicon solar

  1. Engineering Metal Impurities in Multicrystalline Silicon Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar...

  2. Texturization of multicrystalline silicon solar cells

    E-Print Network [OSTI]

    Li, Dai-Yin

    2010-01-01

    A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

  3. Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells

    E-Print Network [OSTI]

    Bertoni, Mariana I.

    In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating ...

  4. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansasCommunities EnergyU.S.Engineering Metal Impurities in Multicrystalline

  5. Low cost manufacturing of light trapping features on multi-crystalline silicon solar cells : jet etching method and cost analysis

    E-Print Network [OSTI]

    Berrada Sounni, Amine

    2010-01-01

    An experimental study was conducted in order to determine low cost methods to improve the light trapping ability of multi-crystalline solar cells. We focused our work on improving current wet etching methods to achieve the ...

  6. Precipitation of interstitial iron in multicrystalline silicon AnYao Liu1, a

    E-Print Network [OSTI]

    Precipitation of interstitial iron in multicrystalline silicon AnYao Liu1, a and Daniel Macdonald1, multicrystalline silicon, precipitation, supersaturation, spatial distribution Abstract The internal gettering of iron in silicon via iron precipitation at low processing temperatures is known to improve solar cell

  7. PEDOT:PSS emitters on multicrystalline silicon thin-film absorbers for hybrid solar cells

    SciTech Connect (OSTI)

    Junghanns, Marcus; Plentz, Jonathan Andrä, Gudrun; Gawlik, Annett; Höger, Ingmar; Falk, Fritz

    2015-02-23

    We fabricated an efficient hybrid solar cell by spin coating poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) on planar multicrystalline Si (mc-Si) thin films. The only 5??m thin Si absorber layers were prepared by diode laser crystallization of amorphous Si deposited by electron beam evaporation on glass. On these absorber layers, we studied the effect of SiO{sub x} and Al{sub 2}O{sub 3} terminated Si surfaces. The short circuit density and power conversion efficiency (PCE) of the mc-Si/Al{sub 2}O{sub 3}/PEDOT:PSS solar cell increase from 20.6 to 25.4?mA/cm{sup 2} and from 7.3% to 10.3%, respectively, as compared to the mc-Si/SiO{sub x}/PEDOT:PSS cell. Al{sub 2}O{sub 3} lowers the interface recombination and improves the adhesion of the polymer film on the hydrophobic mc-Si thin film. Open circuit voltages up to 604?mV were reached. This study demonstrates the highest PCE so far of a hybrid solar cell with a planar thin film Si absorber.

  8. New Metallization Technique Suitable for 6-MW Pilot Production of Efficient Multicrystalline Solar Cells Using Upgraded Metallurgical Silicon: Final Technical Progress Report, December 17, 2007-- June 16, 2009

    Broader source: Energy.gov [DOE]

    This report describes CaliSolar's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. During this time, CaliSolar evolved from a handful of employees to over 100 scientists, engineers, technicians, and operators. On the technical side, the company transitioned from a proof-of-concept through pilot-scale to large-scale industrial production. A fully automated 60-megawatt manufacturing line was commissioned in Sunnyvale, California. The facility converts upgraded metallurgical-grade silicon feedstock to ingots, wafers, and high-efficiency multicrystalline solar cells.

  9. New Metallization Technique Suitable for 6-MW Pilot Production of Efficient Multicrystalline Solar Cells Using Upgraded Metallurgical Silicon: Final Technical Progress Report, December 17, 2007 -- June 16, 2009

    SciTech Connect (OSTI)

    Ounadjela, K.; Blosse, A.

    2010-08-01

    This report describes CaliSolar's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. During this time, CaliSolar evolved from a handful of employees to over 100 scientists, engineers, technicians, and operators. On the technical side, the company transitioned from a proof-of-concept through pilot-scale to large-scale industrial production. A fully automated 60-megawatt manufacturing line was commissioned in Sunnyvale, California. The facility converts upgraded metallurgical-grade silicon feedstock to ingots, wafers, and high-efficiency multicrystalline solar cells.

  10. Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

    E-Print Network [OSTI]

    Ganapati, Vidya

    This manuscript concerns the application of infrared birefringence imaging (IBI) to quantify macroscopic and microscopic internal stresses in multicrystalline silicon (mc-Si) solar cell materials. We review progress to ...

  11. Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon

    E-Print Network [OSTI]

    Castellanos, Sergio

    In multicrystalline silicon (mc-Si), the presence of dislocation-rich areas limits solar cell conversion efficiencies. Previous studies have demonstrated that dislocation densities higher than 106 cm-2 can dramatically ...

  12. Multi-crystalline II-VI based multijunction solar cells and modules

    DOE Patents [OSTI]

    Hardin, Brian E.; Connor, Stephen T.; Groves, James R.; Peters, Craig H.

    2015-06-30

    Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

  13. High-Efficiency 6?? Multicrystalline Black Solar Cells Based on Metal-Nanoparticle-Assisted Chemical Etching

    E-Print Network [OSTI]

    Hsu, W. Chuck

    2012-01-01

    Multicrystalline silicon (mc-Si) photovoltaic (PV) solar cells with nanoscale surface texturing by metal-nanoparticle-assisted etching are proposed to achieve high power efficiency. The investigation of average nanorod ...

  14. Assembly and characterization of colloid-based antireflective coatings on multicrystalline silicon solar cells

    E-Print Network [OSTI]

    Velev, Orlin D.

    . The high cost is of particular concern, because the wide use of solar cells as a source of alternative solar cells Brian G. Prevo,{ Emily W. Hon and Orlin D. Velev* Received 4th September 2006, Accepted 10th solar cells. The nanocoatings reduced the reflectance of the solar cells by approximately 10% across

  15. Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

    2012-06-01

    We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. We found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several ?m were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.

  16. Precipitation of iron in multicrystalline silicon during annealing A. Y. Liu and Daniel Macdonald

    E-Print Network [OSTI]

    Precipitation of iron in multicrystalline silicon during annealing A. Y. Liu and Daniel Macdonald.203.43.22 On: Tue, 18 Mar 2014 02:19:30 #12;Precipitation of iron in multicrystalline silicon during annealing 2014) In this paper, the precipitation kinetics of iron in multicrystalline silicon during moderate

  17. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells using AFM-Based Electrical Techniques with Nanometer Resolution

    SciTech Connect (OSTI)

    Jiang, C. S.; Heath, J. T.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.

    2011-01-01

    Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

  18. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells Using AFM-Based Electrical Techniques with Nanometer Resolution: Preprint

    SciTech Connect (OSTI)

    Jiang, C. S.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.; Heath, J. T.

    2011-07-01

    Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

  19. Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics

    DOE Patents [OSTI]

    Stoddard, Nathan G

    2015-02-10

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.

  20. Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cells

    E-Print Network [OSTI]

    , Delaware 19702 Joerg Isenberg Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2, D-79110 Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2, D-79110 Freiburg, Germany Eicke R. Weber Electronics Research Laboratory, Department of Materials Science and Engineering, University of California

  1. Materials Science and Engineering B 134 (2006) 282286 Control of metal impurities in "dirty" multicrystalline silicon for solar cells

    E-Print Network [OSTI]

    2006-01-01

    of photovoltaics (PV) in the energy market. The fluctuations of availability and feedstock cost determine.R. Webera,b a Department of Materials Science, University of California, Berkeley, CA 94720, USA b Lawrence processing of solar cells with satisfactory energy conversion efficiency based on inexpensive feedstock

  2. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  3. Imaging Study of Multi-Crystalline Silicon Wafers Throughout the Manufacturing Process: Preprint

    SciTech Connect (OSTI)

    Johnston, S.; Yan, F.; Zaunbracher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

    2011-07-01

    Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging is used to characterize defects and material quality on bricks and wafers. Defect regions within the wafers are influenced by brick position within an ingot and height within the brick. The defect areas in as-cut wafers are compared to imaging results from reverse-bias electroluminescence and dark lock-in thermography and cell parameters of near-neighbor finished cells. Defect areas are also characterized by defect band emissions. The defect areas measured by these techniques on as-cut wafers are shown to correlate to finished cell performance.

  4. On the low carrier lifetime edge zone in multicrystalline silicon ingots

    SciTech Connect (OSTI)

    Jiang, Tingting; Yu, Xuegong; Wang, Lei; Gu, Xin; Yang, Deren, E-mail: mseyang@zju.edu.cn [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-07

    We have demonstrated the cause of low minority carrier lifetime corresponding to the edge zone of casting multicrystalline silicon ingots and its influence on the performance of solar cells. It is found that the concentration of substitutional carbon, interstitial oxygen, and dislocation density have no direct correlation with the low minority carrier lifetime in the edge zone. However, the distribution of interstitial iron exactly coincides with the minority carrier lifetime, indicating that iron contamination is mainly responsible for the lifetime degradation. After phosphorus diffusion gettering process, the low carrier lifetime region became narrower, and the concentration of interstitial iron is reduced by almost one order of magnitude. However, the carrier lifetime in the edge zone cannot be raised to average level. After celling process, the internal quantum efficiency map of the edge zone has a lower response to the long wavelength light, in accordance with the minority carrier lifetime distribution in this region. Therefore, the solar cells based on edge zones exhibit slightly lower efficiency than those conventional ones.

  5. Application of infrared birefringence imaging for measuring residual stress in multicrystalline, quasi-mono, dendritic web, and string ribbon silicon for solar cells

    E-Print Network [OSTI]

    Castellanos Rodríguez, Sergio

    2014-01-01

    One of the parameters with highest impact on photovoltaic module cost is manufacturing yield during solar cell production. Yield is, to a great extent, directly affected by the crystallization technique used to grow the ...

  6. Dynamic photoluminescence lifetime imaging of multicrystalline silicon bricks

    E-Print Network [OSTI]

    ,n , Karsten Bothe a , Jan Schmidt a,b , Rolf Brendel a,b , Sebastian Siegmund c a Institute for Solar Energy, Leibniz University of Hanover (LUH), Appelstraße 2, 30167 Hannover, Germany c Schott Solar Wafer GmbH, Fab,2]. The advantage of investigating the brick over measuring as-cut wafers is the smaller influence of the surface

  7. Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence

    E-Print Network [OSTI]

    subject to AIP license or copyright; see http://apl.aip.org/about/rights_and_permissions #12;Imaging), Canberra, ACT 0200, Australia 2 State Key Laboratory of PV Science & Technology, Trina Solar Energy Limited is crystal orientation dependent. We demonstrate that a strong correlation exists between the surface energy

  8. On the capability of deep level transient spectroscopy for characterizing multi-crystalline silicon

    SciTech Connect (OSTI)

    Mchedlidze, T.; Nacke, M.; Hieckmann, E.; Weber, J.

    2014-01-07

    The suitability of the deep level transient spectroscopy (DLTS) technique in exploring locations with high and degraded carrier lifetimes containing grain-boundaries (GBs) in multicrystalline silicon (mc-Si) wafers was studied. The types and locations of GBs were determined in mc-Si samples by electron backscatter diffraction. Mesa-type Schottky diodes were prepared at (along) GBs and at reference, GB-free locations. Detected DLTS signals varied strongly along the same GB. Experiments with dislocation networks, model structures for GBs, showed that GB-related traps may be explored only using special arrangement of a GB and the diode contacts. Iron-related carrier traps were detected in locations with degraded carrier lifetimes. Densities of the traps for near-GB and for GB free locations were compared to the lifetime measurement results.

  9. New Tool Quantitatively Maps Minority-Carrier Lifetime of Multicrystalline Silicon Bricks (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-11-01

    NREL's new imaging tool could provide manufacturers with insight on their processes. Scientists at the National Renewable Energy Laboratory (NREL) have used capabilities within the Process Development and Integration Laboratory (PDIL) to generate quantitative minority-carrier lifetime maps of multicrystalline silicon (mc-Si) bricks. This feat has been accomplished by using the PDIL's photoluminescence (PL) imaging system in conjunction with transient lifetime measurements obtained using a custom NREL-designed resonance-coupled photoconductive decay (RCPCD) system. PL imaging can obtain rapid high-resolution images that provide a qualitative assessment of the material lifetime-with the lifetime proportional to the pixel intensity. In contrast, the RCPCD technique provides a fast quantitative measure of the lifetime with a lower resolution and penetrates millimeters into the mc-Si brick, providing information on bulk lifetimes and material quality. This technique contrasts with commercially available minority-carrier lifetime mapping systems that use microwave conductivity measurements. Such measurements are dominated by surface recombination and lack information on the material quality within the bulk of the brick. By combining these two complementary techniques, we obtain high-resolution lifetime maps at very fast data acquisition times-attributes necessary for a production-based diagnostic tool. These bulk lifetime measurements provide manufacturers with invaluable feedback on their silicon ingot casting processes. NREL has been applying the PL images of lifetime in mc-Si bricks in collaboration with a U.S. photovoltaic industry partner through Recovery Act Funded Project ARRA T24. NREL developed a new tool to quantitatively map minority-carrier lifetime of multicrystalline silicon bricks by using photoluminescence imaging in conjunction with resonance-coupled photoconductive decay measurements. Researchers are not hindered by surface recombination and can look deeper into the material to map bulk lifetimes. The tool is being applied to silicon bricks in a project collaborating with a U.S. photovoltaic industry partner. Photovoltaic manufacturers can use the NREL tool to obtain valuable feedback on their silicon ingot casting processes.

  10. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    SciTech Connect (OSTI)

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  11. Sacrificial high-temperature phosphorus diffusion gettering for lifetime improvement of multicrystalline silicon wafers

    E-Print Network [OSTI]

    Scott, Stephanie Morgan

    2014-01-01

    Iron is among the most deleterious lifetime-limiting impurities in crystalline silicon solar cells. In as-grown material, iron is present in precipitates and in point defects. To achieve conversion efficiencies in excess ...

  12. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    SciTech Connect (OSTI)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  13. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  14. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  15. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansasCommunities EnergyU.S. DOEEnergyEnforcementPortalScience

  16. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansasCommunities EnergyU.S. DOEEnergyEnforcementPortalScienceEngineering

  17. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansasCommunities EnergyU.S.

  18. Engineering Metal Impurities in Multicrystalline Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansasCommunities EnergyU.S.Engineering Metal Impurities in

  19. Transition-metal profiles in a multicrystalline silicon ingot Daniel Macdonalda

    E-Print Network [OSTI]

    of the Netherlands (ECN) Solar Energy, P.O. Box 1, NL-1755 ZG Petten, The Netherlands Received 8 October 2004- grade materials. They cause reduced solar cell conversion efficiencies through increased carrier University, Canberra, ACT 0200, Australia A. Kinomura National Institute of Advanced Industrial Science

  20. Transition metal interaction and Ni-Fe-Cu-Si phases in silicon T. Buonassisi,b

    E-Print Network [OSTI]

    -grade silicon is not cost effi- cient. Therefore, the PV industry is considering the possibil- ity of using, the majority being of multicrystalline silicon mc-Si .1 Depending on the technology the silicon cost may be up to 25% of the cost of solar cells. Further- more, the available amount of electronic-grade silicon

  1. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA)

    1980-01-01

    An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

  2. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  3. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

    1997-01-01

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  4. Solar Cells in 2009 and Beyond Mike McGehee

    E-Print Network [OSTI]

    McGehee, Michael

    Solar Cells in 2009 and Beyond Mike McGehee Materials Science and Engineering These slides parity cost depends on location #12;Conventional p-n junction photovoltaic (solar) cell #12;Efficiency (NREL) #12;Multicrystalline silicon solar cells: today's most popular technology 15-18 % efficiency $500

  5. Amorphous silicon/crystalline silicon heterojunctions: The future of high-efficiency silicon solar cells

    E-Print Network [OSTI]

    Firestone, Jeremy

    ;5 Record efficiencies #12;6 Diffused-junction solar cells Diffused-junction solar cell Chemical passivation to ~650 mV #12;7 Silicon heterojunction solar cells a-Si:H provides excellent passivation of c-Si surface Heterojunction solar cell Chemical passivation Chemical passivation #12;8 Voc and silicon heterojunction solar

  6. Enabling Thin Silicon Solar Cell Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely...

  7. Tandem junction amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  8. Solar cell with silicon oxynitride dielectric layer

    DOE Patents [OSTI]

    Shepherd, Michael; Smith, David D

    2015-04-28

    Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0silicon oxynitride dielectric layer.

  9. Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

    SciTech Connect (OSTI)

    Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

    2012-04-15

    We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

  10. Accurate performance measurement of silicon solar cells

    E-Print Network [OSTI]

    Accurate performance measurement of silicon solar cells William Murray Keogh July 2001 A thesis is an important part of the solar cell manufacturing process. Two classes of measurement can be considered accuracy. The light source is very important when calibrating solar cells. Commonly used light sources

  11. Fabricating solar cells with silicon nanoparticles

    DOE Patents [OSTI]

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  12. Manufacture of silicon carbide using solar energy

    DOE Patents [OSTI]

    Glatzmaier, Gregory C. (Boulder, CO)

    1992-01-01

    A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  13. Compensated amorphous-silicon solar cell

    DOE Patents [OSTI]

    Devaud, G.

    1982-06-21

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

  14. Arrays of ultrathin silicon solar microcells

    DOE Patents [OSTI]

    Rogers, John A.; Rockett, Angus A.; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

    2015-08-11

    Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

  15. Arrays of ultrathin silicon solar microcells

    DOE Patents [OSTI]

    Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

    2014-03-25

    Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

  16. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  17. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA)

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  18. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  19. Harmful Shunting Mechanisms Found in Silicon Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    Scientists developed near-field optical microscopy for imaging electrical breakdown in solar cells and identified critical electrical breakdown mechanisms operating in industrial silicon and epitaxial silicon solar cells.

  20. And the Award Goes to... Silicon Ink Solar Technology Supported...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator...

  1. GCL Solar Energy Technology Holdings formerly GCL Silicon aka...

    Open Energy Info (EERE)

    GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name: GCL Solar Energy Technology Holdings (formerly GCL...

  2. Metal electrode for amorphous silicon solar cells

    DOE Patents [OSTI]

    Williams, Richard (Princeton, NJ)

    1983-01-01

    An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

  3. Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density

    E-Print Network [OSTI]

    : Proof of concept and physical limits to the data storage density F. E. Rougieux and D. Macdonald in multicrystalline silicon wafers for solar cells J. Appl. Phys. 102, 054506 (2007); 10.1063/1.2776003 Influence to the data storage density F. E. Rougieux and D. Macdonald Research School of Engineering, College

  4. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  5. Efficiency of silicon solar cells containing chromium

    DOE Patents [OSTI]

    Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

    1982-01-01

    Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

  6. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, T.F.

    1995-03-28

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

  7. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1995-01-01

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

  8. Back-contacted back-junction silicon solar cells

    E-Print Network [OSTI]

    Johansen, Tom Henning

    electricity from BC-BJ silicon solar cells cost-competitive with electBack-contacted back-junction silicon solar cells Krister Mangersnes THESIS submitted in partial nearly four years as a Ph.D. student at the Institute for Energy Technology (IFE), Department of Solar

  9. Investigating the efficiency of Silicon Solar cells at

    E-Print Network [OSTI]

    Attari, Shahzeen Z.

    Investigating the efficiency of Silicon Solar cells at different temperatures and wavelengths to study the characteristics of silicon photovoltaic cells (solar cells). We vary the wavelength of light as well as the temperature of the solar cell to investigate how the open voltage across the cell varies

  10. Amorphous silicon passivated contacts for diffused junction silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J. Yan, D.; Wan, Y.; Cuevas, A.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-04-28

    Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

  11. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    E-Print Network [OSTI]

    Mailoa, Jonathan P.

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband ...

  12. Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells

    E-Print Network [OSTI]

    Mailoa, Jonathan P

    2012-01-01

    Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

  13. High temperature investigations of crystalline silicon solar cell materials

    E-Print Network [OSTI]

    Hudelson, George David Stephen, III

    2009-01-01

    Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

  14. CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION

    E-Print Network [OSTI]

    CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high efficiency silicon thin-film solar cells. Industrially feasible epitaxy systems therefore

  15. BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS

    E-Print Network [OSTI]

    BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS F. Haase contact cells. Kraiem et al [7] made a back contact thin film monocrystalline solar cell with cell), Am Ohrberg 1, D-31860 Emmerthal, Germany ABSTRACT We develop a back contact monocrystalline thin-film

  16. Solar cell structure incorporating a novel single crystal silicon material

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  17. EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques

    E-Print Network [OSTI]

    Kaiser, Todd J.

    1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser - Bozeman Screen Printed Solar Cells · Starting wafer is about 0.5 mm thick and 10 x 10 cm2. The wafer is p-type and lightly doped with Boron (1016/cm3) 2 Screen Printed Solar Cells · Saw Damage Etch ­ The starting wafer

  18. Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,

    E-Print Network [OSTI]

    Fan, Shanhui

    ABSTRACT: Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices solar cell. Additionally, about 26% of the module cost comes from the fabrication processes of a SiHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

  19. Recombination in compensated crystalline silicon for solar cells Daniel Macdonalda)

    E-Print Network [OSTI]

    in an improved short-circuit current, open-circuit voltage, and solar cell efficiency. VC 2011 American InstituteRecombination in compensated crystalline silicon for solar cells Daniel Macdonalda) and Andre. Accordingly, several research groups have dem- onstrated solar cell performance on compensated material

  20. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

    E-Print Network [OSTI]

    Lee, Ka Yee C.

    . Lieber1,2 Solar cells are attractive candidates for clean and renewable power1,2 ; with miniaturizationLETTERS Coaxial silicon nanowires as solar cells and nanoelectronic power sources Bozhi Tian1 in polymer- blend4 and dye-sensitized solar cells5,6 , to demonstrate carrier multiplication7 , and to enable

  1. Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA)

    1982-01-01

    An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

  2. Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    pin Photodiodes 6 Substrate and Superstrate Designs 7 Multijunction Solar Cells 8 1.3 Staebler IV Measurement 46 Quantum Efficiency Measurements in Multijunction Cells 46 Matching Component Cells in Multijunction Designs 47 High efficiency multiple-junction solar cells 48 5.4 Microcrystalline Silicon Solar

  3. Defect behavior of polycrystalline solar cell silicon

    SciTech Connect (OSTI)

    Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P.

    1993-05-01

    The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

  4. Efficient light-trapping nanostructures in thin silicon solar cells

    E-Print Network [OSTI]

    Han, Sang Eon

    We examine light-trapping in thin crystalline silicon periodic nanostructures for solar cell applications. Using group theory, we show that light-trapping can be improved over a broad band when structural mirror symmetry ...

  5. Simulation of iron impurity gettering in crystalline silicon solar cells

    E-Print Network [OSTI]

    Powell, Douglas M. (Douglas Michael)

    2012-01-01

    This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also ...

  6. Geometry control of recrystallized silicon wafers for solar applications

    E-Print Network [OSTI]

    Ruggiero, Christopher W

    2009-01-01

    The cost of manufacturing crystalline silicon wafers for use in solar cells can be reduced by eliminating the waste streams caused by sawing ingots into individual wafers. Professor Emanuel Sachs has developed a new method ...

  7. Silicon Ink Technology Offers Path to Higher Efficiency Solar...

    Broader source: Energy.gov (indexed) [DOE]

    Silicon Ink Technology Offers Path to Higher Efficiency Solar Cells at Lower Cost Partnering with Sunnyvale-based Innovalight, which was acquired by DuPont in July 2011, EERE...

  8. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore »silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  9. Copper doped polycrystalline silicon solar cell

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

    1981-01-01

    Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

  10. Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon 

    E-Print Network [OSTI]

    Lee, I-Syuan

    2014-05-07

    effect were also investigated. It has been demonstrated that a 30 nm thick amorphous silicon could be transformed into polycrystalline with 70%-80% of crystalline volume fraction in a short time. The thin-film polycrystalline silicon solar cells were...

  11. NREL Develops ZnSiP2 for Silicon-Based Tandem Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-08-01

    Combining an Earth-abundant chalcopyrite with a silicon layer could significantly boost conversion efficiency above that of single-junction silicon solar cells.

  12. Ion implanted silicon solar cells with 18% conversion efficiency

    SciTech Connect (OSTI)

    Spitzer, M.B.; Keavney, C.J.; Milstein, J.B.; Tobin, S.P.

    1984-05-01

    The results of research on the basic understanding of high efficiency in silicon solar cells are presented. It is shown that through the use of low resistivity silicon, texture-etching, ion implantation, surface passivation, and Ta/sub 2/O/sub 5/ antireflection coatings, very high performance can be obtained. Cells with 18% AMI conversion efficiency (100 mW/cm/sup 2/, 28/sup 0/C) are reported, and research to increase the performance to much higher levels is described.

  13. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01

    Silicon Solar Cells and Lithium-ion Batteries Using PrintedSilicon Solar Cells and Lithium-ion Batteries Using Printedfor the system and lithium-ion batteries will be used to

  14. The analysis and optimization of a spherical silicon solar cell 

    E-Print Network [OSTI]

    McKee, William Randall

    1976-01-01

    THE ANALYSIS AND OPTIMIZATION OF A SPHERICAL SILICON SOLAR CELL A Thesis by William Randall McKee /'' Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE... August 1976 Ma]or Subject: Electrical Engineering THE ANALYSIS AND OPTIMIZATION OF A SPHERICAL SILICON SOLAR CELL A Thesis by William Randall McKee Approved as to style and content by: (Chai. rman of Committee) (H of D partment) (Member) 2D...

  15. Solar power conversion efficiency in modulated silicon nanowire photonic Alexei Deinega and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinega://jap.aip.org/about/rights_and_permissions #12;Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinegaa that using only 1 lm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power

  16. Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    of the photovoltaics market. Currently, the best efficiency of commercial silicon solar modules is around 17Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic://jap.aip.org/authors #12;Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic

  17. LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS

    E-Print Network [OSTI]

    LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS F. Haase losses in back-contact back- junction monocrystalline thin-film silicon solar cells. The cells are made for back-contact back- junction (BC BJ) monocrystalline thin-film silicon solar cells using the PSI process

  18. Modelling and fabrication of high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    Rohatgi, A.; Smith, A.W.; Salami, J.

    1991-10-01

    This report covers the research conducted on modelling and development of high-efficiency silicon solar cells during the period May 1989 to August 1990. First, considerable effort was devoted toward developing a ray-tracing program for the photovoltaic community to quantify and optimize surface texturing for solar cells. Second, attempts were made to develop a hydrodynamic model for device simulation. Such a model is somewhat slower than drift-diffusion type models like PC-1D, but it can account for more physical phenomena in the device, such as hot carrier effects, temperature gradients, thermal diffusion, and lattice heat flow. In addition, Fermi-Dirac statistics have been incorporated into the model to deal with heavy doping effects more accurately. Third and final component of the research includes development of silicon cell fabrication capabilities and fabrication of high-efficiency silicon cells. 84 refs., 46 figs., 10 tabs.

  19. Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells

    E-Print Network [OSTI]

    Atwater, Harry

    Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells Michael D. Kelzenberg, Daniel B-voltage measurements were made under simulated Air Mass 1.5 global illumination. Photovoltaic spectral response work by our group has shown that macroscopic Si wire arrays (>1 cm2 in area) suitable for photovoltaic

  20. NREL Success Stories - Quest for Inexpensive Silicon Solar Cells

    ScienceCinema (OSTI)

    Branz, Howard

    2013-05-29

    Scientists at the National Renewable Energy Laboratory (NREL) share their story about a successful partnership with Oak Ridge National Laboratory and the Ampulse Corporation and how support from the US Department of Energy's Technology Commercialization & Deployment Fund has helped it and their silicon solar cell research thrive.

  1. Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

    SciTech Connect (OSTI)

    Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

    2014-10-27

    We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ?100??s or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1??m of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461??s. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

  2. Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells photovoltaic solar cell. Optical simulations performed on a complete solar cell revealed that patterning to obtain ultrathin patterned solar cells. Keywords: Photonic crystals; Epitaxial crystalline silicon; Thin

  3. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  4. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01

    to integrate thin-film solar cells and batteries (2)methods for thin-film solar cells and batteries (4) Developamorphous silicon thin-film solar cell. Part number TX3-25

  5. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, Ajeet (Marietta, GA); Chen, Zhizhang (Duluth, GA); Doshi, Parag (Atlanta, GA)

    1996-01-01

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

  6. Mechanisms limiting open circuit voltage in silicon solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Keavney, C.J.; Lindholm, F.A.; Nevgroschel, A.; Tobin, S.P.

    1984-05-01

    This paper reports the results of research on mechanisms limiting open circuit voltage in conventional p/n junction silicon solar cells, with a view toward both the understanding of various heavy-doping effects and the achievement of high conversion efficiency. Experimental and theoretical studies have been conducted in order to correlate heavy-doping effects to actual solar cell performance. The experiments have utilized a variety of emitter configurations with various doping concentrations in order to emphasize a number of concentration-dependent mechanisms. The theoretical modeling addresses the determination of both recombination velocity at the passivated front surface and effects of recombination at the front ohmic contact.

  7. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-01-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  8. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  9. Silicon Ink for High-Efficiency Solar Cells Captures a Share of the Market (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-08-01

    Fact sheet on 2011 R&D 100 Award winner Silicon Ink. Liquid silicon has arrived, and with it comes a power boost for solar cells and dramatic cost savings for cell manufacturers.

  10. Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; Castellanos, Sergio; Buonassisi, Tonio

    2015-10-15

    Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore »effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

  11. FIRST SOLAR CELLS ON SILICON RIBBONS OBTAINED BY FAST CVD FROM SILANE

    E-Print Network [OSTI]

    Lisbon, University of

    FIRST SOLAR CELLS ON SILICON RIBBONS OBTAINED BY FAST CVD FROM SILANE C. R. Pinto, J. M. Serra, M on solar cells made on silicon ribbons obtained by a two-step process: pre-ribbons obtained by CVD followed be doped to make them suitable as base material for solar cells. To this purpose the ribbons were

  12. Preprint 24th EU PVSEC, 2009, Hamburg FITTING OF LATERAL RESISTANCES IN SILICON SOLAR CELLS

    E-Print Network [OSTI]

    Junk, Michael

    Preprint 24th EU PVSEC, 2009, Hamburg FITTING OF LATERAL RESISTANCES IN SILICON SOLAR CELLS cell from electroluminescence (EL) is introduced. A two-dimensional model of the solar cell screen printed monocrystalline silicon solar cell are shown and the influence of lateral diffusion

  13. Extended light scattering model incorporating coherence for thin-film silicon solar cells

    E-Print Network [OSTI]

    Lenstra, Arjen K.

    Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non efficiency spectra of state-of-the-art microcrystalline silicon solar cells. The simulations agree very well

  14. Simulation of Large-Area Silicon Solar Cells1 Gernot Heiser2

    E-Print Network [OSTI]

    New South Wales, University of

    Simulation of Large-Area Silicon Solar Cells1 Gernot Heiser2 Pietro P. Altermatt3 The University of high-efficiency silicon solar cells. In the past, however, such modelling could only be applied to produce an accurate model of a full-sized high-efficiency solar cell. We demon- strate the power

  15. Light trapping regimes in thin-film silicon solar cells with a photonic pattern

    E-Print Network [OSTI]

    Light trapping regimes in thin-film silicon solar cells with a photonic pattern Simone Zanotto a theoretical study of crystalline and amorphous silicon thin-film solar cells with a periodic pattern on a sub. Poortmans and V. Arkhipov (editors), Thin Film Solar Cells (Wiley, Chichester 2006). 4. P. W¨urfel, Physics

  16. Defect Engineering, Cell Processing, and Modeling for High-Performance, Low-Cost Crystalline Silicon Photovoltaics

    SciTech Connect (OSTI)

    Buonassisi, Tonio

    2013-02-26

    The objective of this project is to close the efficiency gap between industrial multicrystalline silicon (mc-Si) and monocrystalline silicon solar cells, while preserving the economic advantage of low-cost, high-volume substrates inherent to mc-Si. Over the course of this project, we made significant progress toward this goal, as evidenced by the evolution in solar-cell efficiencies. While most of the benefits of university projects are diffuse in nature, several unique contributions can be traced to this project, including the development of novel characterization methods, defect-simulation tools, and novel solar-cell processing approaches mitigate the effects of iron impurities ("Impurities to Efficiency" simulator) and dislocations. In collaboration with our industrial partners, this project contributed to the development of cell processing recipes, specialty materials, and equipment that increased cell efficiencies overall (not just multicrystalline silicon). Additionally, several students and postdocs who were either partially or fully engaged in this project (as evidenced by the publication record) are currently in the PV industry, with others to follow.

  17. Silicon Valley Solar Inc SV Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS ReportEurope GmbH Jump to: navigation,ShowSikes Act JumpGenesisSolar

  18. Development of Black Silicon Antireflection Control and Passivation Technology for Commercial Application: Cooperative Research and Development Final Report, CRADA Number CRD-12-475

    SciTech Connect (OSTI)

    Yuan, H. C.

    2014-06-01

    The work involves the development of a commercial manufacturing process for both multicrystalline and monocrystalline solar cells that combines Natcore's patent pending passivation technology.

  19. High-efficiency ion-implanted silicon solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Tobin, S.P.

    1984-05-01

    The development of solar cells with AM1 coversion efficiency of 18 percent is reported. The cells comprise an n/sup +/-p-p/sup +/ structure fabricated from float zone silicon having resistivity of 0.3 ..cap omega.. cm. The n/sup +/ and p/sup +/ regions are formed by low energy ion implantation and thermal annealing. An important feature of cell fabrication is the growth of SiO/sub 2/ passivation for reduction of surface recombination velocity. Details of both cell fabrication and testing are reported.

  20. Impact of dopant compensation on the electrical properties of silicon for solar cell applications

    E-Print Network [OSTI]

    Impact of dopant compensation on the electrical properties of silicon for solar cell applications and ideas and for enriching my knowledge with his brilliant insights into the fundamentals of silicon solar cells. I would like to show my gratitude to Dr. Keith McIntosh, also a member of my supervisory panel

  1. Improved efficiency of smooth and aligned single walled carbon nanotube/silicon hybrid solar cells

    E-Print Network [OSTI]

    Reed, Mark

    and versatility of CNTs in energy storage and conversion devices. In fact, CNT has already been used to contactImproved efficiency of smooth and aligned single walled carbon nanotube/silicon hybrid solar cells on silicon (Si) together with post treatments result in SWNT/Si hybrid solar cells with unprecedented high

  2. 15.7% Efficient 10-?m-Thick Crystalline Silicon Solar Cells Using Periodic Nanostructures

    E-Print Network [OSTI]

    Branham, Matthew Sanders

    Only ten micrometer thick crystalline silicon solar cells deliver a short-circuit current of 34.5 mA cm[superscript ?2] and power conversion efficiency of 15.7%. The record performance for a crystalline silicon solar cell ...

  3. Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demsy and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demésy and Sajeev://jap.aip.org/authors Downloaded 12 Oct 2012 to 99.230.201.54. Redistribution subject to AIP license or copyright; see http://jap.aip.org/about/rights_and_permissions #12;Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demesya

  4. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, Ajeet (Marietta, GA); Doshi, Parag (Altanta, GA); Tate, John Keith (Lawrenceville, GA); Mejia, Jose (Atlanta, GA); Chen, Zhizhang (Duluth, GA)

    1998-06-16

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure.

  5. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

    1998-06-16

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

  6. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    E-Print Network [OSTI]

    McGehee, Michael

    -bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductorSemi-transparent perovskite solar cells for tandems with silicon and CIGS Colin D. Bailie,a M on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar

  7. Amorphous silicon solar cells techniques for reactive conditions

    SciTech Connect (OSTI)

    Shimizu, Satoshi; Okawa, Kojiro; Kamiya, Toshio; Fortmann, C.M.; Shimizu, Isamu

    1999-07-01

    The preparation of amorphous silicon films and solar cells using SiH{sub 2}Cl{sub 2} source gas and electron cyclotron resonance assisted chemical vapor deposition (ECR-CVD) was investigated. By using buffer layers to protect previously deposited layers improved a-Si:H(Cl) solar cells were prepared and studied. The high quality a-Si:H(Cl) films used in this study exhibited low defect densities ({approximately}10{sup 15} cm{sup {minus}3}) and high stability under illumination even when the deposition rate was increased to {approximately} 15A/s. The solar cells were deposited in the n-i-p sequence. These solar cells achieved V{sub oc} values of {approximately}0.89V and {approximately}3.9% efficiency on Ga doped ZnO (GZO) coated specular substrate. The a-Si:H(Cl) electron and hole {mu}{tau} products were {approximately}10{sup {minus}8} cm{sup 2}/V.

  8. Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

    SciTech Connect (OSTI)

    Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; Fanni, Lorenzo; de Nicolas Agut, Silvia Martin; Geissbuhler, Jonas; Paviet-Salomon, Bertrand; Nicolay, Sylvain; Barraud, Loris; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

    2015-10-26

    Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.

  9. Metal catalyst technique for texturing silicon solar cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Zaidi, Saleem H. (Albuquerque, NM)

    2001-01-01

    Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.

  10. Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Ris National Laboratory, DK-4000

    E-Print Network [OSTI]

    1 Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Risø National Laboratory, DK of utilising solar energy, but this direct energy transfer does not involve the elements of focusing solar energy in a way that is economically competitive, also in regions where other energy sources

  11. Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell

    E-Print Network [OSTI]

    to bring down the cost of photovoltaic (PV) solar cells has gained huge momentum, and many strategiesOptimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic

  12. Exciton splitting and carrier transport across the amorphous-silicon/ polymer solar cell interface

    E-Print Network [OSTI]

    McGehee, Michael

    of bilayer hybrid solar cells to better understand the physics controlling organic-inorganic device of Physics. DOI: 10.1063/1.2408641 Hybrid organic-inorganic solar cells combine the pro- cessabilityExciton splitting and carrier transport across the amorphous-silicon/ polymer solar cell interface

  13. Silicon epitaxy below 200C: Towards thin crystalline solar cells R. Carioua,b

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    . However material still represent more than 40% of the cost of c-Si PV Thin Film Solar Technology IV-Si) technology. Indeed, the learning curve of c-Si solar cells has reached a plateau since 1999 with the 25Silicon epitaxy below 200°C: Towards thin crystalline solar cells R. Carioua,b , R. Ruggeria,c , P

  14. Photonic light trapping and electrical transport in thin-film silicon solar cells

    E-Print Network [OSTI]

    Photonic light trapping and electrical transport in thin-film silicon solar cells Lucio Claudio Keywords: Thin-film solar cells Light trapping Photonic structures Carrier collection Electro-optical simulations Surface recombination a b s t r a c t Efficient solar cells require both strong absorption

  15. LAYER TRANSFER OF LARGE AREA MACROPOROUS SILICON FOR MONOCRYSTALLINE THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    LAYER TRANSFER OF LARGE AREA MACROPOROUS SILICON FOR MONOCRYSTALLINE THIN-FILM SOLAR CELLS Marco-based solar cells is approximately 200 µm with a kerf loss of about 100 µm caused by wire sawing. However, lower wafer thicknesses are sufficient for achieving high solar cell efficiencies exceeding 20 % [1

  16. Solar Grade Silicon from Agricultural By-products

    SciTech Connect (OSTI)

    Richard M. Laine

    2012-08-20

    In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it starts one step upstream from all other Sipv production efforts. Our process starts by producing high purity SiO2/C feedstocks from which Sipv can be produced in a single, chlorine free, final EAF step. Specifically, our unique technology, and the resultant SiO2/C product can serve as high purity feedstocks to existing metallurgical silicon (Simet) producers, allowing them to generate Sipv with existing US manufacturing infrastructure, reducing the overall capital and commissioning schedule. Our low energy, low CAPEX and OPEX process purifies the silica and carbon present in rice hull ash (RHA) at low temperatures (< 200C) to produce high purity (5-6 Ns) feedstock for production of Sipv using furnaces similar to those used to produce Simet. During the course of this project we partnered with Wadham Energy LP (Wadham), who burns 220k ton of rice hulls (RH)/yr generating 200 GWh of electricity/yr and >30k ton/yr RHA. The power generation step produces much more energy (42 kWh/kg of final silicon produced) than required to purify the RHA (5 kWh/kg of Sipv, compared to 65 kWh/kg noted above. Biogenic silica offers three very important foundations for producing high purity silicon. First, wastes from silica accumulating plants, such as rice, corn, many grasses, algae and grains, contain very reactive, amorphous silica from which impurities are easily removed. Second, plants take up only a limited set of, and minimal quantities of the heavy metals present in nature, meaning fewer minerals must be removed. Third, biomass combustion generates a product with intrinsic residual carbon, mixed at nanometer length scales with the SiO2. RHA is 80-90 wt% high surface area (20 m2/g), amorphous SiO2 with some simple mineral content mixed intimately with 5-15 wt% carbon. The mineral content is easily removed by low cost, acid washes using Mayaterials IP, leading to purified rice hull ash (RHAclean) at up to 6N purity. This highly reactive silica is partially extracted from RHAclean at 200 C in an environmentally benign process to adjust SiO2:C ratios to those needed in EA

  17. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.

  18. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more »between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

  19. Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; Fanni, Lorenzo; de Nicolas Agut, Silvia Martin; Geissbuhler, Jonas; Paviet-Salomon, Bertrand; Nicolay, Sylvain; Barraud, Loris; Niesen, Bjoern; et al

    2015-10-26

    Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore »cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

  20. A Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates.

    E-Print Network [OSTI]

    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5.5 Epilift process - Centre for Sustainable Energy Systems, ANU Systems Engineering Department, The Australian National University, ACT 0200, Australia. Email : michelleA Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates

  1. Optimized scalable stack of fluorescent solar concentrator systems with bifacial silicon solar cells

    SciTech Connect (OSTI)

    Martínez Díez, Ana Luisa, E-mail: a.martinez@itma.es [Fundación ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avilés (Spain); Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Gutmann, Johannes; Posdziech, Janina; Rist, Tim; Goldschmidt, Jan Christoph [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Plaza, David Gómez [Fundación ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avilés (Spain)

    2014-10-21

    In this paper, we present a concentrator system based on a stack of fluorescent concentrators (FCs) and a bifacial solar cell. Coupling bifacial solar cells to a stack of FCs increases the performance of the system and preserves its efficiency when scaled. We used an approach to optimize a fluorescent solar concentrator system design based on a stack of multiple fluorescent concentrators (FC). Seven individual fluorescent collectors (20 mm×20 mm×2 mm) were realized by in-situ polymerization and optically characterized in regard to their ability to guide light to the edges. Then, an optimization procedure based on the experimental data of the individual FCs was carried out to determine the stack configuration that maximizes the total number of photons leaving edges. Finally, two fluorescent concentrator systems were realized by attaching bifacial silicon solar cells to the optimized FC stacks: a conventional system, where FC were attached to one side of the solar cell as a reference, and the proposed bifacial configuration. It was found that for the same overall FC area, the bifacial configuration increases the short-circuit current by a factor of 2.2, which is also in agreement with theoretical considerations.

  2. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ?1.55?nm, achieve the best carrier-selectivity producing a contact resistivity ?{sub c} of ?3 m? cm{sup 2} and a recombination current density J{sub 0c} of ?40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350?°C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  3. 19.4% -EFFICIENT LARGE AREA REAR-PASSIVATED SCREEN-PRINTED SILICON SOLAR CELLS T. Dullweber*1

    E-Print Network [OSTI]

    -printed cells by 0.2% [6,7]. The electrical and optical losses of the full- area Al-BSF at the rear side can19.4% -EFFICIENT LARGE AREA REAR-PASSIVATED SCREEN-PRINTED SILICON SOLAR CELLS T. Dullweber*1 , S implemented a baseline solar cell process based on today's standard industrially manufactured silicon solar

  4. Hydrogenated Nanocrystalline Silicon p-Layer in a-Si:H n-i-p Solar Cells Wenhui Dua)

    E-Print Network [OSTI]

    Deng, Xunming

    ). Using this kind of p-layer in n-i-p a-Si:H solar cells, the cell performances were improved with a VocHydrogenated Nanocrystalline Silicon p-Layer in a-Si:H n-i-p Solar Cells Wenhui Dua) , Xianbo Liaob hydrogenated amorphous silicon (a-Si:H) solar cells. Raman scattering spectroscopy and transmission electron

  5. Amorphous silicon cell array powered solar tracking apparatus

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1985-01-01

    An array of an even number of amorphous silicon solar cells are serially connected between first and second terminals of opposite polarity. The terminals are connected to one input terminal of a DC motor whose other input terminal is connected to the mid-cell of the serial array. Vane elements are adjacent the end cells to selectively shadow one or the other of the end cells when the array is oriented from a desired attitude relative to the sun. The shadowing of one cell of a group of cells on one side of the mid-cell reduces the power of that group substantially so that full power from the group of cells on the other side of the mid-cell drives the motor to reorient the array to the desired attitude. The cell groups each have a full power output at the power rating of the motor. When the array is at the desired attitude the power output of the two groups of cells balances due to their opposite polarity so that the motor remains unpowered.

  6. Silicon heterojunction solar cell with passivated hole selective MoO{sub x} contact

    SciTech Connect (OSTI)

    Battaglia, Corsin; Yin, Xingtian; Zheng, Maxwell; Javey, Ali, E-mail: ajavey@eecs.berkeley.edu [Electrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Martín de Nicolás, Silvia; De Wolf, Stefaan; Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne, 2000 Neuchâtel (Switzerland)

    2014-03-17

    We explore substoichiometric molybdenum trioxide (MoO{sub x}, x?silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711?mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO{sub x}, we observe a substantial gain in photocurrent of 1.9?mA/cm{sup 2} in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

  7. Mapping boron in silicon solar cells using electron energy-loss spectroscopy

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    Mapping boron in silicon solar cells using electron energy-loss spectroscopy M Duchamp1 , C B 3 ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten, The Netherlands 4 CEA-Leti, MINATEC Campus, 17-mail: martial.duchamp@cen.dtu.dk Abstract. Electron energy-loss spectroscopy (EELS) is used to study the B

  8. Electroabsorption measurements and built-in potentials in amorphous silicon pin solar cells

    E-Print Network [OSTI]

    Deng, Xunming

    Electroabsorption measurements and built-in potentials in amorphous silicon p­i­n solar cells Lin 13244-1130 S. Guha and J. Yang United Solar Systems Corporation, 1100 West Maple Road, Troy, Michigan electroabsorption measurements to determine the built-in potential in semiconductor heterojunction devices

  9. In an effort to design a more low cost, highly efficient alternative to the traditional silicon solar cell, our

    E-Print Network [OSTI]

    In an effort to design a more low cost, highly efficient alternative to the traditional silicon solar cell, our research implements lead sulfide nanocrystals as light harvesters. Semiconducting

  10. High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    1 High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells PHASE II Annual-Efficiency Single-Junction a-SiGe Solar Cells Section 3 Optimization of High-efficiency a-Si Top Cell Section 4. Figure 2-3 J-V curve of a single-junction a-SiGe solar cell with initial, active-area efficiency

  11. CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    to be mainly concentrated at the oxide/nitride interface. The thermal stability of the charge is shown silicon nitride layers can lead to a significant improvement in surface recombination at lightly doped of a tunnel oxide, a silicon nitride layer and optionally, a barrier oxide or other dielectric material. As

  12. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect (OSTI)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  13. FIRING STABILITY OF SiNy / SiNx SURFACE PASSIVATION STACKS FOR CRYSTALLINE SILICON SOLAR CELLS

    E-Print Network [OSTI]

    FIRING STABILITY OF SiNy / SiNx SURFACE PASSIVATION STACKS FOR CRYSTALLINE SILICON SOLAR CELLS S of solar cells using p-type boron-doped Cz- and FZ-silicon wafers. After local laser ablation of the dielectrics and full-area metallization of the rear we achieve energy conversion efficiencies up to 19

  14. Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations

    E-Print Network [OSTI]

    important evaluation criterion for photovoltaic (PV) technology. Therefore, research on novel structuresTowards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping February 2014; published online 3 March 2014) Thin-film solar cells based on silicon have emerged

  15. PROJECT PROFILE: Silicon-Based Tandem Solar Cells

    Broader source: Energy.gov [DOE]

    The project will demonstrate bonded gallium indium phosphide (GaInP) on silicon tandem cells, evaluate the advantages and disadvantages of this method of forming higher-efficiency tandem cells, and compare two- and three-terminal device configurations.

  16. Fundamental understanding and development of low-cost, high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

    2000-05-01

    The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

  17. Studies of thin film hydrogenated silicon solar cells using electron energy-loss spectroscopy in the transmission electron microscope

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    Studies of thin film hydrogenated silicon solar cells using electron energy-loss spectroscopy (TEM) to study n-i-p thin film Si solar cells grown on steel foil or glass substrates. For a solar cell experiment, we study the chemical compositions of defective regions in thin film Si solar cells using energy

  18. Response to "Comment on `Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations'" [J. Appl. Phys. 117,

    E-Print Network [OSTI]

    Response to "Comment on `Towards high efficiency thin-film crystalline silicon solar cells high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non.1063/1.4905182 Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non

  19. Transmissive metallic contact for amorphous silicon solar cells

    DOE Patents [OSTI]

    Madan, A.

    1984-11-29

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  20. Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; Ballif, Christophe; Wolf, Stefaan De

    2015-03-02

    Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devicesmore »with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.« less

  1. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias

    DOE Patents [OSTI]

    Gee, James M; Schmit, Russell R.

    2007-01-30

    Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.

  2. Cost-Effective Silicon Wafers for Solar Cells: Direct Wafer Enabling Terawatt Photovoltaics

    SciTech Connect (OSTI)

    2010-01-15

    Broad Funding Opportunity Announcement Project: 1366 is developing a process to reduce the cost of solar electricity by up to 50% by 2020—from $0.15 per kilowatt hour to less than $0.07. 1366’s process avoids the costly step of slicing a large block of silicon crystal into wafers, which turns half the silicon to dust. Instead, the company is producing thin wafers directly from molten silicon at industry-standard sizes, and with efficiencies that compare favorably with today’s state-of-the-art technologies. 1366’s wafers could directly replace wafers currently on the market, so there would be no interruptions to the delivery of these products to market. As a result of 1366’s technology, the cost of silicon wafers could be reduced by 80%.

  3. High-Intensity Silicon Vertical Multi-Junction Solar Cells |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    operation for optimum compatibility with most power processing loads. An active cooling system in the StarGen solar concentrator removes heat from the PhotoVolt cells,...

  4. Silicon Ink Technology Offers Path to Higher Efficiency Solar...

    Office of Environmental Management (EM)

    analysis. Partnering with National Labs Brings Cutting Edge Technology to Market Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image...

  5. And the Award Goes to... Silicon Ink Solar Technology Supported...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters approach the microphone carrying a sealed envelope, a faint drum...

  6. CURRENT NEWS Sandwich Solar Cells May See Off Silicon

    E-Print Network [OSTI]

    Rogers, John A.

    to manufacture thin films of GaAs that also allowed versatility in the types of devices they could multiple layers of the material on a single wafer, creating a layered, "pancake" stack of GaAs thin films the photovoltaic (PV) cells are based on silicon. However, alternatives such as GaAs and other compound

  7. Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells. de Bariloche, Argentina 3 ECN Solar Energy, High Tech Campus, Building 5, 5656 AE Eindhoven energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar

  8. Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

    E-Print Network [OSTI]

    of the BO defect and thus improve the final performance of UMG-Si solar cells. Another lately debated issue-grade silicon solar cells Maxime Forster a,n , Pierre Wagner a,b , Julien Degoulange a , Roland Einhaus compensation on the degradation of carrier lifetime and solar cells performance due to the boron­oxygen defect

  9. Mode coupling by plasmonic surface scatterers in thin-film silicon solar cells M. van Lare,1

    E-Print Network [OSTI]

    Polman, Albert

    Mode coupling by plasmonic surface scatterers in thin-film silicon solar cells M. van Lare,1 F a completed thin-film a-Si:H solar cell. Current-voltage measurements show a photocurrent enhancement of 10 of Physics. [http://dx.doi.org/10.1063/1.4767997] Thin-film solar cells offer the potential of high photovol

  10. In-Line Crack and Stress Detection in Silicon Solar Cells Using Resonance Ultrasonic Vibrations

    SciTech Connect (OSTI)

    Ostapenko, Sergei

    2013-04-03

    Statement of Problem and Objectives. Wafer breakage in automated solar cell production lines is identified as a major technical problem and a barrier for further cost reduction of silicon solar module manufacturing. To the best of our knowledge, there are no commercial systems addressing critical needs for in-line inspection of the mechanical quality of solar wafers and cells. The principal objective of the SBIR program is to validate through experiments and computer modeling the applicability of the Resonance Ultrasonic Vibrations system, which ultimately can be used as a real-time in-line manufacturing quality control tool for fast detection of mechanically unstable silicon solar cells caused by cracks. The specific objective of Phase II is to move the technology of in-line crack detection from the laboratory level to commercial demonstration through development of a system prototype. The fragility of silicon wafers possessing low mechanical strength is attributed to peripheral and bulk millimeter-length cracks. The research program is based on feasibility results obtained during Phase I, which established that: (i) the Resonance Ultrasonic Vibrations method is applicable to as-cut, processed wafers and finished cells; (ii) the method sensitivity depends on the specific processing step; it is highest in as-cut wafers and lowest in wafers with metallization pattern and grid contacts; (iii) the system is capable of matching the 2.0 seconds per wafer throughput rate of state-of-art solar cell production lines; (iv) finite element modeling provides vibration mode analysis along with peak shift versus crack length and crack location dependence; (v) a high 91% crack rejection rate was confirmed through experimentation and statistical analysis. The Phase II project has the following specific tasks: (i) specify optimal configurations of the in-line system�¢����s component hardware and software; (ii) develop and justify a system prototype that meets major specifications for an in-line crack detection unit, such as high throughput rate, high level of stability, reproducibility of data acquisition and analysis, and high sensitivity with respect to crack length and crack location; (iii) design a system platform that allows easy integration within and adaptation to various solar cell belt-type production lines; (iv) develop a testing protocol providing quality certification of the production-grade system. Commercial Application of the proposed activity consists of bringing to the solar market a new high-tech product based on an innovative solution and patented methodology to contribute to cost reduction of silicon solar module production. The solar industry, with crystalline silicon as a dominant segment, shows outstanding performance, with approximately 25% yearly growth during the last years. Despite a slowdown with only 5.6 GW installations in 2009, solar module production for the 2010 and 2011 years was recovered. According to European Photonics Industry Consortium new solar PV installations grow by 56% compared to 2010 reached 64.7 GW in 2011. Revenues in the PV industry reached a record high of $93 billion in 2011, a 13.4 percent gain over 2010 â�� and 150 percent over 2009. This growth was forecasted to continue in 2013 with double digits growth. The solar industry is economically driven to make solar panels of the highest conversion efficiency and reliability at the lowest production cost. The Resonance Ultrasonic Vibration system addresses critical needs of the silicon-based solar industry by providing a quality control method and tool, which will improve productivity, increase reliability of products and reduce manufacturing cost of solar panels.

  11. California: TetraCell Silicon Solar Cell Improves Efficiency...

    Broader source: Energy.gov (indexed) [DOE]

    used in traditional screen printed solar cells-with copper, which is much lower in cost and subject to less market-based price volatility. This technology also allows for...

  12. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel Jonathan P. Mailoa, Colin D. Bailie, Eric C. Johlin, Eric T. Hoke, Austin J. Akey, William H. Nguyen, Michael D.

    E-Print Network [OSTI]

    McGehee, Michael

    A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells AIP of high bandgap tunnel junctions for multijunction solar cells Appl. Phys. Lett. 103, 103503 (2013); 10

  13. GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable Urban TransportFortistarFuelCellsEtcSilicon Co Ltd Jump to:GInc

  14. Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

  15. Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations

    E-Print Network [OSTI]

    ://dx.doi.org/10.1063/1.4867008] I. INTRODUCTION A central focus of crystalline silicon (c-Si) solar cell research important evaluation criterion for photovoltaic (PV) technology. Therefore, research on novel structures

  16. High-temperature defect engineering for silicon solar cells : predictive process simulation and synchrotron-based microcharacterization

    E-Print Network [OSTI]

    Fenning, David P

    2013-01-01

    Efficiency is a major lever for cost reduction in crystalline silicon solar cells, which dominate the photovoltaics market but cannot yet compete subsidy-free in most areas. Iron impurities are a key performance-limiting ...

  17. Polycrystalline GaAs solar cells on low-cost Silicon-Film{trademark} substrates

    SciTech Connect (OSTI)

    Mauk, M.G.; Feyock, B.W.; Hall, R.B.; Cavanaugh, K.D.; Cotter, J.E.

    1997-12-31

    The authors assess the potential of a low-cost, large-area Silicon-Film{trademark} sheet as a substrate for thin-film polycrystalline GaAs solar cells. Silicon-Film is a relatively inexpensive material on which large-grain (>2 mm) polycrystalline GaAs films can be formed. The GaAs epitaxial layers are grown by a simple close-spaced vapor transport (CSVT) technique using water vapor as a transport agent. A recrystallized Ge{sub 1{minus}x}Si{sub x} buffer layer between the GaAs epilayer and Silicon-Film substrate can facilitate growth of the GaAs. Selective epitaxy on patterned, oxide-masked substrates is effective in reducing thermal stress effects.

  18. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

    DOE Patents [OSTI]

    Kaschmitter, J.L.; Sigmon, T.W.

    1995-10-10

    A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

  19. Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes; Summary Discussion Sessions

    SciTech Connect (OSTI)

    Sopori, B.; Swanson, D.; Sinton, R.; Stavola, M.; Tan, T.

    1998-12-08

    This report is a summary of the panel discussions included with the Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme of the workshop was ''Supporting the Transition to World Class Manufacturing.'' This workshop provided a forum for an informal exchange of information between researchers in the photovoltaic and nonphotovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helped establish a knowledge base that can be used for improving device-fabrication processes to enhance solar-cell performance and reduce cell costs. It also provided an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research.

  20. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA); Sigmon, Thomas W. (Beaverton, OR)

    1995-01-01

    A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

  1. Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration

    E-Print Network [OSTI]

    Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon mc-Si . Metal silicide precipitate decoration is observed to increase

  2. Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Schubert, William K. (Albuquerque, NM); Gee, James M. (Albuquerque, NM)

    1999-01-01

    A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

  3. Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

    DOE Patents [OSTI]

    Ruby, D.S.; Schubert, W.K.; Gee, J.M.

    1999-02-16

    A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas. 5 figs.

  4. Light Trapping for Thin Silicon Solar Cells by Femtosecond Laser Texturing: Preprint

    SciTech Connect (OSTI)

    Lee, B. G.; Lin, Y. T.; Sher, M. J.; Mazur, E.; Branz, H. M.

    2012-06-01

    Femtosecond laser texturing is used to create nano- to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 um thick. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit.

  5. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    SciTech Connect (OSTI)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  6. Optimization of oxidation processes to improve crystalline silicon solar cell emitters

    SciTech Connect (OSTI)

    Shen, L.; Liang, Z. C. Liu, C. F.; Long, T. J.; Wang, D. L.

    2014-02-15

    Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 ?/? performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 ?/? that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 10{sup 20} cm{sup ?3} and 7.78 × 10{sup 20} cm{sup ?3} and with junction depths between 0.46 ?m and 0.55 ?m possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%{sub abs} compared to conventional emitters with 50 ?/? sheet resistance.

  7. GaNPAs Solar Cells that Can Be Lattice-Matched to Silicon

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; McMahon, W. E.; Ptak, A. J.; Kibbler, A. E.; Olson, J. M.; Kurtz, S.; Kramer, C.; Young, M.; Duda, A.; Reedy, R. C.; Keyes, B. M.; Dippo, P.; Metzger, W. K.

    2003-05-01

    III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We have proposed the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct bandgaps in the range of 1.5 to 2.0 eV. We have demonstrated the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and shown improvements in material quality by reducing carbon and hydrogen impurities through optimization of growth conditions. We have achieved quantum efficiencies (QE) in these cells as high as 60% and PL lifetimes as high as 3.0 ns.

  8. Phase 2 of the array automated assembly task for the low cost silicon solar array project. Final report

    SciTech Connect (OSTI)

    Petersen, R.C.

    1980-11-01

    Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process proposed by Motorola, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work has directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The Motorola process was compared with simple electroless nickel plating in a series of parallel experiments. Results are presented. (WHK)

  9. Methods for manufacturing geometric multi-crystalline cast materials

    DOE Patents [OSTI]

    Stoddard, Nathan G

    2013-11-26

    Methods are provided for casting one or more of a semi-conductor, an oxide, and an intermetallic material. With such methods, a cast body of a geometrically ordered multi-crystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm.

  10. NREL: Technology Transfer - The Quest for Inexpensive Silicon Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines lightGeospatial ToolkitSMARTS -BeingFuture for SolarTechnologyNew AmberThe

  11. Japan Solar Silicon Co Ltd JSS | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View NewGuam:onItron (California) Jump to:Jaffrey, NewJames BuchananSolar

  12. Thinner Film Silicon Solar Cells - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.Week DayDr. JeffreyThermalš ÐÓÔÑ ÒØSolar Photovoltaic

  13. ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL SUBSTRATES

    E-Print Network [OSTI]

    Deng, Xunming

    ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL specific power for space application, we deposited a-Si thin film solar cells on ultra-thin stainless steel-thin stainless steel (SS) substrates (down to 7.5 pm) for space power applications. In this paper, we report our

  14. Wireless Solar Water Splitting Using Silicon-Based Semiconductors and Earth-Abundant Catalysts

    SciTech Connect (OSTI)

    Reece, SY; Hamel, JA; Sung, K; Jarvi, TD; Esswein, AJ; Pijpers, JJH; Nocera, DG

    2011-11-03

    We describe the development of solar water-splitting cells comprising earth-abundant elements that operate in near-neutral pH conditions, both with and without connecting wires. The cells consist of a triple junction, amorphous silicon photovoltaic interfaced to hydrogen- and oxygen-evolving catalysts made from an alloy of earth-abundant metals and a cobalt|borate catalyst, respectively. The devices described here carry out the solar-driven water-splitting reaction at efficiencies of 4.7% for a wired configuration and 2.5% for a wireless configuration when illuminated with 1 sun (100 milliwatts per square centimeter) of air mass 1.5 simulated sunlight. Fuel-forming catalysts interfaced with light-harvesting semiconductors afford a pathway to direct solar-to-fuels conversion that captures many of the basic functional elements of a leaf.

  15. Computational design of high performance hybrid perovskite on silicon tandem solar cells

    E-Print Network [OSTI]

    Rolland, A; Beck, A; Kepenekian, M; Katan, C; Huang, Y; Wang, S; Cornet, C; Durand, O; Even, J

    2015-01-01

    In this study, the optoelectronic properties of a monolithically integrated series-connected tandem solar cell are simulated. Following the large success of hybrid organic-inorganic perovskites, which have recently demonstrated large efficiencies with low production costs, we examine the possibility of using the same perovskites as absorbers in a tandem solar cell. The cell consists in a methylammonium mixed bromide-iodide lead perovskite, CH3NH3PbI3(1-x)Br3x (0 < x < 1), top sub-cell and a single-crystalline silicon bottom sub-cell. A Si-based tunnel junction connects the two sub-cells. Numerical simulations are based on a one-dimensional numerical drift-diffusion model. It is shown that a top cell absorbing material with 20% of bromide and a thickness in the 300-400 nm range affords current matching with the silicon bottom cell. Good interconnection between single cells is ensured by standard n and p doping of the silicon at 5.10^19cm-3 in the tunnel junction. A maximum efficiency of 27% is predicted ...

  16. HIGH EFFICIENCY AMORPHOUS SILICON GERMANIUM SOLAR CELLS X. Liao, W. Du, X. Yang, H. Povolny, X. Xiang and X. Deng

    E-Print Network [OSTI]

    Deng, Xunming

    -SiGe) alloy has been widely used as narrow bandgap i-layers in multi-junction a-Si based solar cells [1, 2HIGH EFFICIENCY AMORPHOUS SILICON GERMANIUM SOLAR CELLS X. Liao, W. Du, X. Yang, H. Povolny, X ABSTRACT We report high-efficiency single-junction a-SiGe n-i-p solar cells deposited using rf PECVD

  17. FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS

    E-Print Network [OSTI]

    Deng, Xunming

    FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. INTRODUCTION A-Si:H single-junction solar cells

  18. Investigation of porous alumina as a self-assembled diffractive element to facilitate light trapping in thin film silicon solar cells

    E-Print Network [OSTI]

    Coronel, Naomi (Naomi Cristina)

    2009-01-01

    Thin film solar cells are currently being investigated as an affordable alternative energy source because of the reduced material cost. However, these devices suffer from low efficiencies, compared to silicon wafer solar ...

  19. Ninth workshop on crystalline silicon solar cell materials and processes: Summary discussion sessions

    SciTech Connect (OSTI)

    Sopori, B.; Tan, T.; Swanson, D.; Rosenblum, M.; Sinton, R.

    1999-11-23

    This report is a summary of the panel discussions included with the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme for the workshop was ``R and D Challenges and Opportunities in Si Photovoltaics.'' This theme was chosen because it appropriately reflects a host of challenges that the growing production of Si photovoltaics will be facing in the new millennium. The anticipated challenges will arise in developing strategies for cost reduction, increased production, higher throughput per manufacturing line, new sources of low-cost Si, and the introduction of new manufacturing processes for cell production. At the same time, technologies based on CdTe and CIS will come on line posing new competition. With these challenges come new opportunities for Si PV to wean itself from the microelectronics industry, to embark on a more aggressive program in thin-film Si solar cells, and to try new approaches to process monitoring.

  20. Silicon sheet with molecular beam epitaxy for high efficiency solar cells. Final technical report, March 22, 1982-April 30, 1984

    SciTech Connect (OSTI)

    Not Available

    1984-01-01

    A two-year program has been carried out for the Jet Propulsion Laboratory in which the UCLA silicon MBE facility has been used to attempt to grow silicon solar cells of high efficiency. MBE ofers the potential of growing complex and arbitrary doping profiles with 10 A depth resolution. It is the only technique taht can readily grow built-in front and back surface fields of any desired depth and value in silicon solar cells, or the more complicated profiles needed for a double junction cascade cell, all in silicon, connected in series by a tunnel junction. Although the dopant control required for such structures has been demonstrated in silicon by UCLA, crystal quality at the p-n junctions is still too poor to allow the other advantages to be exploited. Results from other laboratories indicate that this problem will soon be overcome. A computer analysis of the double cascade all in silicon shows that efficiencies can be raised over that of any single silicon cell by 1 or 2%, and that open circuit voltage of almost twice that of a single cell should be possible.

  1. Improved fill factors in amorphous silicon solar cells on zinc oxide by insertion of a germanium layer to block impurity incorporation

    E-Print Network [OSTI]

    Improved fill factors in amorphous silicon solar cells on zinc oxide by insertion of a germanium 80401 (Received 22 September 2003; accepted 25 May 2004) Amorphous silicon based solar cells deposited of a thin, amorphous germanium layer at the ZnO­p-layer interface improves the cell performance and diode

  2. Lithography-free sub-100nm nanocone array antireflection layer for low-cost silicon solar cell

    E-Print Network [OSTI]

    Xu, Zhida

    2014-01-01

    High density and uniformity sub-100nm surface oxidized silicon nanocone forest structure is created and integrated onto the existing texturization microstructures on photovoltaic device surface by a one-step high throughput plasma enhanced texturization method. We suppressed the broadband optical reflection on chemically textured grade-B silicon solar cells for up to 70.25% through this nanomanufacturing method. The performance of the solar cell is improved with the short circuit current increased by 7.1%, fill factor increased by 7.0%, conversion efficiency increased by 14.66%. Our method demonstrates the potential to improve the photovoltaic device performance with low cost high and throughput nanomanufacturing technology.

  3. Reaching Grid Parity Using BP Solar Crystalline Silicon Technology: A Systems Class Application

    SciTech Connect (OSTI)

    Cunningham, Daniel W; Wohlgemuth, John; Carlson, David E; Clark, Roger F; Gleaton, Mark; Posbic, John P; Zahler, James

    2010-12-06

    The primary target market for this program was the residential and commercial PV markets, drawing on BP Solar's premium product and service offerings, brand and marketing strength, and unique routes to market. These two markets were chosen because: (1) in 2005 they represented more than 50% of the overall US PV market; (2) they are the two markets that will likely meet grid parity first; and (3) they are the two market segments in which product development can lead to the added value necessary to generate market growth before reaching grid parity. Federal investment in this program resulted in substantial progress toward the DOE TPP target, providing significant advancements in the following areas: (1) Lower component costs particularly the modules and inverters. (2) Increased availability and lower cost of silicon feedstock. (3) Product specifically developed for residential and commercial applications. (4) Reducing the cost of installation through optimization of the products. (5) Increased value of electricity in mid-term to drive volume increases, via the green grid technology. (6) Large scale manufacture of PV products in the US, generating increased US employment in manufacturing and installation. To achieve these goals BP Solar assembled a team that included suppliers of critical materials, automated equipment developers/manufacturers, inverter and other BOS manufacturers, a utility company, and University research groups. The program addressed all aspects of the crystalline silicon PV business from raw materials (particularly silicon feedstock) through installation of the system on the customers site. By involving the material and equipment vendors, we ensured that supplies of silicon feedstock and other PV specific materials like encapsulation materials (EVA and cover glass) will be available in the quantities required to meet the DOE goals of 5 to 10 GW of installed US PV by 2015 and at the prices necessary for PV systems to reach grid parity in 2015. This final technical report highlights the accomplishments of the BP Solar technical team from 2006 to the end of the project in February 2010. All the main contributors and team members are recognized for this accomplishment and their endeavors are recorded in the twelve main tasks described here.

  4. 17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating

    SciTech Connect (OSTI)

    Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

    2011-01-01

    In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon `black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in `black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

  5. Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-23

    The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

  6. Inks for Ink Jet Printed Contacts for High Performance Silicon Solar Cells: Cooperative Research and Development Final Report, CRADA No. CRD-06-199

    SciTech Connect (OSTI)

    Ginley, D.

    2013-01-01

    The work under the proposed CRADA will be a joint effort by BP Solar and NREL to develop new types of high performance inks for high quality contacts to silicon solar cells. NREL will develop inks that have electronic properties that will allow the formation of high quality ohmic contacts to n- and p-type crystalline silicon, and BP Solar will evaluate these contacts in test contact structures.

  7. Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

    E-Print Network [OSTI]

    Kim, Yong Jung

    -i-n solar cells Chang Hyun Lee and Koeng Su Lim Department of Electrical Engineering, Korea Advanced this film, amorphous silicon (a-Si solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were as window materials for amorphous silicon (a-Si based solar cells.1­4 In using such films as a p layer

  8. ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR CELLS

    E-Print Network [OSTI]

    ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR- contacted rear being either passivated by atomic-layer- deposited Al2O3 or by stacks consisting-Si passivation to thermal processes. ATOMIC-LAYER-DEPOSITED Al2O3 Recently, it was shown that thin films

  9. Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Jiang, C. S.; Moutinho, H. R.; Reedy, R. C.; Al-Jassim, M. M.; Yan, B.; Yue, G.; Sivec, L.; Yang, J.; Guha, S.; Tong, X.

    2012-04-01

    We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement on a nc-Si:H cell with a higher oxygen impurity concentration shows that the nonuniformity of the electric field is much more pronounced than in samples having a lower O impurity, indicating that O is an electron donor in nc-Si:H materials. This nonuniform distribution of electric field implies a mixture of diffusion and drift of carrier transport in the nc-Si:H solar cells. The composition and structure of these nc-Si:H cells were further investigated by using secondary-ion mass spectrometry and Raman spectroscopy, respectively. The effects of impurity and structural properties on the electrical potential distribution and solar cell performance are discussed.

  10. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    SciTech Connect (OSTI)

    Fonash, S.J.

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  11. Optimization of the optical properties of nanostructured silicon surfaces for solar cell applications

    SciTech Connect (OSTI)

    Zhou, Di; Pennec, Y.; Djafari-Rouhani, B.; Lambert, Y.; Deblock, Y.; Stiévenard, D., E-mail: didier.stievenard@isen.fr [Institut d'Electronique et de Microélectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe de Physique, Cité scientifique, avenue Poincaré, 59652 Villeneuve d'Ascq (France); Cristini-Robbe, O. [PHLAM, UMR8523, Université de Lille 1, 59652 Villeneuve d'Asq Cedex (France); Xu, T. [Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Faucher, M. [Institut d'Electronique et de Microélectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe NAM6, Cité scientifique, avenue Poincaré, 59652 Villeneuve d'Asq (France)

    2014-04-07

    Surface nanostructuration is an important challenge for the optimization of light trapping in solar cell. We present simulations on both the optical properties and the efficiency of micro pillars—MPs—or nanocones—NCs—silicon based solar cells together with measurements on their associated optical absorption. We address the simulation using the Finite Difference Time Domain method, well-adapted to deal with a periodic set of nanostructures. We study the effect of the period, the bottom diameter, the top diameter, and the height of the MPs or NCs on the efficiency, assuming that one absorbed photon induces one exciton. This allows us to give a kind of abacus involving all the geometrical parameters of the nanostructured surface with regard to the efficiency of the associated solar cell. We also show that for a given ratio of the diameter over the period, the best efficiency is obtained for small diameters. For small lengths, MPs are extended to NCs by changing the angle between the bottom surface and the vertical face of the MPs. The best efficiency is obtained for an angle of the order of 70°. Finally, nanostructures have been processed and allow comparing experimental results with simulations. In every case, a good agreement is found.

  12. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    SciTech Connect (OSTI)

    Theodorakos, I.; Zergioti, I.; Tsoukalas, D.; Raptis, Y. S.; Vamvakas, V.

    2014-01-28

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  13. Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers

    SciTech Connect (OSTI)

    1998-08-01

    The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

  14. Laser annealing of ion implanted CZ silicon for solar cell junction formation. Quarterly report No. 1

    SciTech Connect (OSTI)

    Katzeff, J. S.

    1980-07-01

    A project to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation on solar cells is described. A Q-switched Nd:Glass laser system is used operating in the 1064 (regular) and 532 (with frequency doubler) nm wavelengths. The laser output is in excess of 30 joules with a 20 to 50 ns pulse duration. Material used in this investigation is 3-inch diameter CZ silicon, P-type 0.014 inches thick, 10..cap omega..-cm resistivity, <100> orientation. Three wafer surface conditions are being evaluated in this pulse annealing investigation: chem-polished, texture etched, and flash etched. Annealing was performed with and without beam homogenization. Both modes showed excellent lattice recovery from the implant-induced damage as analyzed using Rutherford backscattering techniques. Homogenization of the beam was performed using a fused silica rod configured with a 90/sup 0/ bend. The unhomogenized annealing was performed using a plano-concave lens. Fabrication of laser annealed cells using both modes is forthcoming.

  15. Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209

    SciTech Connect (OSTI)

    Sopori, B.

    2013-03-01

    NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

  16. Large-area Silicon-Film{trademark} panels and solar cells. Final technical report, July 1995--March 1998

    SciTech Connect (OSTI)

    Rand, J.A.; Bai, Y.; Barnett, A.M.; Culik, J.S.; Ford, D.H.; Hall, R.B.; Kendall, C.L.

    1998-09-01

    This report will detail substantial improvements in each of the task areas. A number of new products were developed, including a 130 kW array built using a new panel design. Improvements in laboratory-scale solar cell processing resulted in a confirmed efficiency of 16.6%. A new Silicon-Film{trademark} production sheet machine was built which increased throughput by 70%. Three solar cell fabrication processes were converted from low throughout batch processes to high throughput, continuous, belt processes. These new processes are capable of processing sheet over 31 cm in width. Finally, a new Silicon-Film{trademark} sheet machine was built that demonstrated a sheet width of 38 cm. This tool enabled AstroPower to demonstrate a wide range of solar cell sizes, many of which have generated considerable market interest.

  17. PROCEEDINGS O F THE IEEE, VOL.56, NO. 1, JANUARY196837 [`I J. J. Wysocki,"Lithium-doped radiation-resistant silicon solar

    E-Print Network [OSTI]

    Teich, Malvin C.

    ,"Lithium-doped radiation-resistant silicon solar cells," IEEE Trans. Nuclear Science. vol.NS-13, pp. 168-173, December 1966. X-713-6548, November1965. 161 ~ , "Thermalannealing of radiation damagein solar cells," ['I R. L. Tech. J.,vol. 41, pp.1573-1588,September 1962. ["I R. L. Statler, "Radiation damage insilicon solar

  18. Towards the efficiency limits of silicon solar cells: how thin is too thin?

    E-Print Network [OSTI]

    Kowalczewski, Piotr

    2015-01-01

    It is currently possible to fabricate crystalline silicon solar cells with the absorber thickness ranging from a few hundreds of micrometers (conventional wafer-based cells) to devices as thin as $1\\,\\mu\\mathrm{m}$. In this work, we use a model single-junction solar cell to calculate the limits of energy conversion efficiency and estimate the optimal absorber thickness. The limiting efficiency for cells in the thickness range between 40 and $500\\,\\mu\\mathrm{m}$ is very similar and close to 29%. In this regard, we argue that decreasing the thickness below around $40\\,\\mu\\mathrm{m}$ is counter-productive, as it significantly reduces the maximum achievable efficiency, even when optimal light trapping is implemented. We analyse the roles of incomplete light trapping and extrinsic (bulk and surface) recombination mechanisms. For a reasonably high material quality, consistent with present-day fabrication techniques, the optimal thickness is always higher than a few tens of micrometers. We identify incomplete light ...

  19. Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Morales-Masis, Monica; Martin De Nicolas, Silvia; Holovsky, Jakub; De Wolf, Stefaan; Ballif, Christophe

    2015-07-13

    Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobility are preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy (EU)-as a function of the sputtering oxygen partial pressure.more »We obtain an EU as low as 128 meV for films with the highest Hall mobility of 60 cm2/Vs. When comparing the performance of a-IZO films with indium tin oxide (ITO) and hydrogenated indium oxide (IO:H), we find that IO:H (115 cm2/Vs) exhibits a similar EU of 130 meV, while ITO (25 cm2/Vs) presents a much larger EU of up to 270 meV. The high film quality, indicated by the low EU, the high mobility, and low free carrier absorption of the developed a-IZO electrodes, result in a significant current improvement, achieving conversion efficiencies over 21.5%, outperforming those with standard ITO.« less

  20. Junction silicon solar cells made with molecular beam glow discharge bombardment

    SciTech Connect (OSTI)

    Caine, E.J.

    1982-01-01

    The fabrication of silicon PN junction solar cells with molecular implanted emitter regions is described. A simple, economical high current (0.5 mA/cm/sup 2/), low voltage (4-6 kV) glow discharge apparatus without any ion mass separation is used for implantation. The discharge beam is characterized with a current-voltage conduction curve, radial profile of target sheet resistance and operating temperature of implant target. Molecular implantation compounds discussed include: boron trifluoride, trimethyl borate, boron trichloride, trimethyl phosphite, arsenic trifluoride, phosphorus trichloride, phosphorus oxychloride and arsenic trichloride. Annealing is accomplished with a Q-switched ruby laser and with a standard diffusion furnace. Solar cell performance parameters (conversion efficiency, quantum efficiency and junction ideality) are compared with cells conventionally implanted at 30 keV with /sup 11/B and /sup 31/P and cells made with a standard open tube phosphorus oxychloride diffusion. Cell substrate thickness was found to limit short circuit current. Total area simulated AM1 power conversion efficiencies of molecular cells without antireflection coatings or backsurface fields are at best 8.2% as compared to 9.0% for conventional implanted or diffused devices. To achieve optimum performance, laser light had to be incorporated in the molecular implant annealing procedure.

  1. Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-01

    The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

  2. Large-area silicon-film{sup {trademark}} panels and solar cells. Phase I annual technical report, July 1, 1995--December 31, 1995

    SciTech Connect (OSTI)

    Rand, J.A.; Barnett, A.M.; Checchi, J.C.; Culik, J.S.

    1996-06-01

    AstroPower is establishing a low cost manufacturing process for Silicon-Film{trademark} solar cells and panels by taking advantage of the continuous nature of the Silicon-Film{trademark} technology. Under this effort, each step used in Silicon-Film{trademark} panel fabrication is being developed into a continuous/in-line manufacturing process. The following benefits are expected: an accelerated reduction of PV manufacturing cost for installed systems; a foundation for significantly increased production capacity; and a reduction in handling and waste streams. The process development will be based on a new 31-cm wide continuous Silicon-Film{trademark} sheet. Long-term goals include the development of a 24W, 30 cm x 60 cm Silicon-Film{trademark} solar cell and a manufacturing capability for a 384W, 4 inches x 8 inches Silicon-Film{trademark} panel for deployment in utility-scale applications.

  3. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01

    demonstration,” Solar Energy Materials and Solar Cells, vol.spectroscopy,” Solar energy materials and solar cells, vol.materials[2]. Multifunctional composite structure can be applied onto building windows to harvest solar energy

  4. Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate

    E-Print Network [OSTI]

    Psaltis, Demetri

    Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light://jap.aip.org/about/rights_and_permissions #12;Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light developed substrate that decouples the growth and scattering interfaces are investigated in n-i-p triple-junction

  5. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual technical report, April 1, 1995--March 31, 1996

    SciTech Connect (OSTI)

    Gordon, R.G.; Sato, H.; Liang, H.; Liu, X.; Thornton, J. [Harvard Univ., Cambridge, MA (United States)

    1996-08-01

    The general objective is to develop methods to deposit materials which can be used to make more efficient solar cells. The work is organized into three general tasks: Task 1. Develop improved methods for depositing and using transparent conductors of fluorine-doped zinc oxide in amorphous silicon solar cells Task 2. Deposit and evaluate titanium oxide as a reflection-enhancing diffusion barrier between amorphous silicon and an aluminum or silver back-reflector. Task 3. Deposit and evaluate electrically conductive titanium oxide as a transparent conducting layer on which more efficient and more stable superstrate cells can be deposited. About one-third of the current project resources are allocated to each of these three objectives.

  6. Spatially resolved determination of the short-circuit current density of silicon solar cells via lock-in thermography

    SciTech Connect (OSTI)

    Fertig, Fabian Greulich, Johannes; Rein, Stefan

    2014-05-19

    We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

  7. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2005-11-01

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  8. Module Handbook Specialisation Photovoltaics

    E-Print Network [OSTI]

    Habel, Annegret

    solar cell Real solar cells Silicon solar cells: crystalline, multicrystalline, amorphous Cells: CdTe and CIGS technologies. Organic solar cells. Part 2: Fabrication Methods Crystal defects Theory Fabrication methods Solar cell properties Cell research and pilot productions facilities

  9. NREL's Black Silicon Increases Solar Cell Efficiency by Reducing Reflected Sunlight (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2010-11-01

    A fact sheet detailing the R&D 100 Award-winning Black Silicon Nanocatalytic Wet-Chemical Etch technology.

  10. Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations

    SciTech Connect (OSTI)

    Bozzola, A. Kowalczewski, P.; Andreani, L. C.

    2014-03-07

    Thin-film solar cells based on silicon have emerged as an alternative to standard thick wafers technology, but they are less efficient, because of incomplete absorption of sunlight, and non-radiative recombinations. In this paper, we focus on the case of crystalline silicon (c-Si) devices, and we present a full analytic electro-optical model for p-n junction solar cells with Lambertian light trapping. This model is validated against numerical solutions of the drift-diffusion equations. We use this model to investigate the interplay between light trapping, and bulk and surface recombination. Special attention is paid to surface recombination processes, which become more important in thinner devices. These effects are further amplified due to the textures required for light trapping, which lead to increased surface area. We show that c-Si solar cells with thickness of a few microns can overcome 20% efficiency and outperform bulk ones when light trapping is implemented. The optimal device thickness in presence of light trapping, bulk and surface recombination, is quantified to be in the range of 10–80??m, depending on the bulk quality. These results hold, provided the effective surface recombination is kept below a critical level of the order of 100?cm/s. We discuss the possibility of meeting this requirement, in the context of state-of-the-art techniques for light trapping and surface passivation. We show that our predictions are within the capability of present day silicon technologies.

  11. Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

    2012-06-01

    We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

  12. Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

    2014-09-09

    A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

  13. Forming high-efficiency silicon solar cells using density-graded anti-reflection surfaces

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

    2015-07-07

    A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

  14. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    SciTech Connect (OSTI)

    Ravi, T. S.

    2013-05-01

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  15. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2006-08-01

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  16. Toward a Monolithic Lattice-Matched III-V on Silicon Tandem Solar Cell

    SciTech Connect (OSTI)

    Geisz, J. F.; Olson, J. M.; Friedman, D. J.

    2004-09-01

    A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated some of the key components toward realizing such a cell, including GaNPAs top cells grown on silicon substrates, GaP-based tunnel junctions grown on silicon substrates, and diffused silicon junctions formed during the epitaxial growth of GaNP on silicon. These components have required the development of techniques for the growth of high crystalline quality GaNPAs on silicon by metal-organic vapor-phase epitaxy.

  17. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01

    better mechanical durability. CIGS solar cell has about 20%5]. However, CIGS solar cells degrade with humidity andSelenide (CIGS)[3] and organic polymer[4] solar cells are

  18. High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003

    SciTech Connect (OSTI)

    Rand, J. A.; Culik, J. S.

    2005-10-01

    The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

  19. Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells

    SciTech Connect (OSTI)

    Kopach, V. R.; Kirichenko, M. V. Khrypunov, G. S.; Zaitsev, R. V.

    2010-06-15

    It is shown that an increase in the efficiency and manufacturability of single-junction single-crystal silicon photoelectric converters of solar energy requires the use of a back-surface reflector based on conductive transparent indium-tin oxide (ITO) 0.25-2 {mu}m thick. To increase the efficiency and reduce the sensitivity to the angle of light incidence on the photoreceiving surface of multijunction photoelectric converters with vertical diode cells based on single-crystal silicon, ITO/Al reflectors with an ITO layer >1 {mu}m thick along vertical boundaries of diode cells should be fabricated. The experimental study of multijunction photoelectric converters with ITO/Al reflectors at diode cell boundaries shows the necessity of modernizing the used technology of ITO layers to achieve their theoretically calculated thickness.

  20. Washington Silicon Plant Makes Way for Cheaper Solar—and Jobs

    Office of Energy Efficiency and Renewable Energy (EERE)

    Refining the raw material used in photovoltaic panels, silicon, is not a cheap endeavor, and has kept the price of panels more expensive than other energy sources. But REC Silicon, one of the largest producers of raw material, has found a way to lower costs thanks in part to the Recovery Act.

  1. Optimization of transparent and reflecting electrodes for amorphous-silicon solar cells. Final subcontract report, 1 May 1991--30 April 1994

    SciTech Connect (OSTI)

    Gordon, R.G.; Hu, J.; Lacks, D.; Musher, J.; Thornton, J.; Liang, H. [Harvard Univ., Cambridge, MA (United States)

    1994-07-01

    Fluorine-doped zinc oxide was shown to have the lowest absorption loss of any of the known transparent conductors. An apparatus was constructed to deposit textured, transparent, conductive, fluorine-doped zinc oxide layers with uniform thickness over a 10 cm by 10 cm area, using inexpensive, high-productivity atmospheric pressure chemical vapor deposition. Amorphous silicon solar cells grown on these textured films show very high peak quantum efficiencies (over 90%). However, a significant contact resistance develops at the interface between the amorphous silicon and the zinc oxide. Transparent, conductive gallium-doped zinc oxide films were grown by APCVD at a low enough temperature (260{degree}C) to be deposited on amorphous silicon as a final conductive back contact to solar cells. A quantum-mechanical theory of bonding was developed and applied to some metal oxides; it forms a basis for understanding TCO structures and the stability of their interfaces with silicon.

  2. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2008-09-01

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  3. See-through amorphous silicon solar cells with selectively transparent and conducting photonic crystal back reflectors for building integrated photovoltaics

    SciTech Connect (OSTI)

    Yang, Yang; O’Brien, Paul G.; Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 ; Ozin, Geoffrey A. E-mail: kherani@ecf.utoronto.ca; Kherani, Nazir P. E-mail: kherani@ecf.utoronto.ca

    2013-11-25

    Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with selectively transparent and conducting photonic crystal (STCPC) back-reflectors are demonstrated. Short circuit current density of a 135?nm thick a-Si:H cell with a given STCPC back-reflector is enhanced by as much as 23% in comparison to a reference cell with an ITO film functioning as its rear contact. Concurrently, solar irradiance of 295?W/m{sup 2} and illuminance of 3480 lux are transmitted through the cell with a given STCPC back reflector under AM1.5 Global tilt illumination, indicating its utility as a source of space heating and lighting, respectively, in building integrated photovoltaic applications.

  4. Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

    SciTech Connect (OSTI)

    Müller, Ralph Schrof, Julian; Reichel, Christian; Benick, Jan; Hermle, Martin

    2014-09-08

    The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implanted phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674?mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.

  5. ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES

    SciTech Connect (OSTI)

    Ridgeway, R.G.; Hegedus, S.S.; Podraza, N.J.

    2012-08-31

    Air Products set out to investigate the impact of additives on the deposition rate of both ���µCSi and ���±Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products�¢���� electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

  6. Light-induced V{sub oc} increase and decrease in high-efficiency amorphous silicon solar cells

    SciTech Connect (OSTI)

    Stuckelberger, M., E-mail: michael.stuckelberger@epfl.ch; Riesen, Y.; Despeisse, M.; Schüttauf, J.-W.; Haug, F.-J.; Ballif, C. [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71, CH-2000 Neuchâtel (Switzerland)

    2014-09-07

    High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (V{sub oc}) increase upon light soaking for thin p-layers, but a decrease for thick p-layers. Further, the V{sub oc} increase is enhanced with increasing substrate roughness. After correction of the p-layer thickness for the increased surface area of rough substrates, we can exclude varying the effective p-layer thickness as the cause of the substrate roughness dependence. Instead, we explain the observations by an increase of the dangling-bond density in both the p-layer—causing a V{sub oc} increase—and in the intrinsic absorber layer, causing a V{sub oc} decrease. We present a mechanism for the light-induced increase and decrease, justified by the investigation of light-induced changes of the p-layer and supported by Advanced Semiconductor Analysis simulation. We conclude that a shift of the electron quasi-Fermi level towards the conduction band is the reason for the observed V{sub oc} enhancements, and poor amorphous silicon quality on rough substrates enhances this effect.

  7. Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells

    E-Print Network [OSTI]

    Powell, Douglas M. (Douglas Michael)

    2014-01-01

    Reducing material use is a major driver for cost reduction of crystalline silicon photovoltaic modules. The dominant wafer fabrication process employed in the industry today, ingot casting & sawing, wastes approximately ...

  8. Research on high-efficiency, multiple-gap, multijunction, amorphous-silicon-based alloy thin-film solar cells

    SciTech Connect (OSTI)

    Guha, S. )

    1989-06-01

    This report presents results of research on advancing our understanding of amorphous-silicon-based alloys and their use in small-area multijunction solar cells. The principal objectives of the program are to develop a broad scientific base for the chemical, structural, optical, and electronic properties of amorphous-silicon-based alloys; to determine the optimum properties of these alloy materials as they relate to high-efficiency cells; to determine the optimum device configuration for multijunction cells; and to demonstrate proof-of-concept, multijunction, a-Si-alloy-based solar cells with 18% efficiency under standard AM1.5 global insolation conditions and with an area of at least 1 cm{sup 2}. A major focus of the work done during this reporting period was the optimization of a novel, multiple-graded structure that enhances cell efficiency through band-gap profiling. The principles of the operation of devices incorporating such a structure, computer simulations of those, and experimental results for both single- and multijunction cells prepared by using the novel structure are discussed in detail. 14 refs., 35 figs., 7 tabs.

  9. 17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating: Preprint

    SciTech Connect (OSTI)

    Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

    2011-07-01

    In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon 'black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in 'black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

  10. 10th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers from the Workshop, Copper Mountain Resort; August 14-16, 2000

    SciTech Connect (OSTI)

    Sopori, B.L.; Gee, J.; Kalejs, J.; Saitoh, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.

    2000-08-11

    The 10th Workshop provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions included the various aspects of impurities and defects in silicon-their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions also reviewed thin-film crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing requirements to meet the ambitious expansion goals described in the recently released US PV Industry Roadmap. The Workshop also provided an excellent opportunity for researchers in private industry and at universities to recognize a mutual need for future collaborative research. The three-day workshop consisted of presentations by invited speakers, followed by discussion sessions. In addition, there was two poster sessions presenting the latest research and development results. The subjects discussed included: solar cell processing, light-induced degradation, gettering and passivation, crystalline silicon growth, thin-film silicon solar cells, and impurities and defects. Two special sessions featured at this workshop: advanced metallization and interconnections, and characterization methods.

  11. Thin Silicon Solar Cells: A Path to 35% Shockley-Queisser Limits

    SciTech Connect (OSTI)

    Ding, Laura; Boccard, Mathieu; Williams, Joshua; Jeffries, April; Gangam, Srikanth; Ghosh, Kunal; Honsberg, Christiana; Bowden, Stuart; Holman, Zachary; Atwater, Harry; Buonassisi, Tonio; Bremner, Stephen; Green, Martin; Balif, Christoph; Bertoni, Mariana

    2014-06-08

    Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here the objectives and workplan of a recently launched project funded by the U.S. Department of Energy through the Foundational Program to Advance Cell Efficiency II (FPACE II), which aims at leading crystalline silicon to an efficiency breakthrough. The project will tackle fundamental approach of materials design, defect engineering, device simulations and materials growth and characterization. Among the main novelties, the implementation of carrier selective contacts made of wide bandgap material or stack of materials is investigated for improved passivation, carrier extraction and carrier transport. Based on an initial selection of candidate materials, preliminary experiments are conducted to verify the suitability of their critical parameters as well as preservation of the silicon substrate surface and bulk properties. The target materials include III-V and metal-oxide materials.

  12. Received 13 May 2013 | Accepted 18 Nov 2013 | Published 16 Dec 2013 All-back-contact ultra-thin silicon nanocone solar

    E-Print Network [OSTI]

    Cui, Yi

    , Stanford, California 94305, USA. 3 Stanford Institute for Materials and Energy Sciences, SLAC National, Stanford, California 94305, USA. 2 Department of Materials Science and Engineering, Stanford University-thin silicon nanocone solar cells with 13.7% power conversion efficiency Sangmoo Jeong1, Michael D. McGehee2

  13. Mat. Res. Soc. Symp. Proc. Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer

    E-Print Network [OSTI]

    Deng, Xunming

    the efficiencies of the multi-junction devices. The µc-Si cells do not significantly degrade (-light absorbing structures in multi-junction cell with blue-green light absorbing a-Si:H top cells would lead of Microcrystalline Silicon Based Solar Cells at High i-layer Deposition Rates Using a Gas Jet Technique S.J. Jones

  14. Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells

    E-Print Network [OSTI]

    Deceglie, Michael G.

    2014-01-01

    in ultrathin plasmonic solar cells," Optics Express, vol.Bailat, "Thin-film silicon solar cell technology," Progresstrapping in silicon thin film solar cells," Solar Energy,

  15. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01

    of thin- film Li-ion batteries under flexural deflection,”thin-film solar cells and batteries (2) Characterizesolar cells and batteries for multifunctional performance (

  16. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01

    Solar-Powered Unmanned Aerial Vehicle. ” [20] E. Bennett, “H. Eisenbeiss, “A mini unmanned aerial vehicle (UAV): systemstructure is Unmanned Aerial Vehicles (UAVs), and the

  17. Short-circuit current density imaging of crystalline silicon solar cells via lock-in thermography: Robustness and simplifications

    SciTech Connect (OSTI)

    Fertig, Fabian Greulich, Johannes; Rein, Stefan

    2014-11-14

    Spatially resolved determination of solar cell parameters is beneficial for loss analysis and optimization of conversion efficiency. One key parameter that has been challenging to access by an imaging technique on solar cell level is short-circuit current density. This work discusses the robustness of a recently suggested approach to determine short-circuit current density spatially resolved based on a series of lock-in thermography images and options for a simplified image acquisition procedure. For an accurate result, one or two emissivity-corrected illuminated lock-in thermography images and one dark lock-in thermography image have to be recorded. The dark lock-in thermography image can be omitted if local shunts are negligible. Furthermore, it is shown that omitting the correction of lock-in thermography images for local emissivity variations only leads to minor distortions for standard silicon solar cells. Hence, adequate acquisition of one image only is sufficient to generate a meaningful map of short-circuit current density. Beyond that, this work illustrates the underlying physics of the recently proposed method and demonstrates its robustness concerning varying excitation conditions and locally increased series resistance. Experimentally gained short-circuit current density images are validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

  18. Back-side hydrogenation technique for defect passivation in silicon solar cells

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    1994-01-01

    A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.

  19. EFFICIENCY ENHANCEMENT IN THIN-FILM SILICON SOLAR CELLS WITH A PHOTONIC LATTICE

    E-Print Network [OSTI]

    designed antireflection coating. The study and optimization of the PV structure as a function of all into the quasi guided modes of the photonic slab. We compare the efficiency of this structure to that of PV cells layer is over 100 microns, and the cost of the silicon is more than a half of the total cost

  20. Back-side hydrogenation technique for defect passivation in silicon solar cells

    DOE Patents [OSTI]

    Sopori, B.L.

    1994-04-19

    A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts. 3 figures.

  1. Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.

    DOE Patents [OSTI]

    Yang, Liyou (Plainsboro, NJ); Chen, Liangfan (Langhorne, PA)

    1998-03-24

    Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

  2. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, April 1, 1994--March 31, 1995

    SciTech Connect (OSTI)

    Gordon, R.G.

    1995-10-01

    Transparent and reflecting electrodes are important parts of the structure of amorphous silicon solar cells. We report improved methods for depositing zinc oxide, deposition of tin nitride as a potential reflection-enhancing diffusion barrier between the a-Si and back metal electrodes. Highly conductive and transparent fluorine-doped zinc oxide was successfully produced on small areas by atmospheric pressure CVD from a less hazardous zinc precursor, zinc acetylacetonate. The optical properties measured for tin nitride showed that the back-reflection would be decreased if tin nitride were used instead of zinc oxide as a barrier layer over silver on aluminum. Niobium-doped titanium dioxide was produced with high enough electrical conductivity so that normal voltages and fill factors were obtained for a-Si cells made on it.

  3. Potential-induced degradation in solar cells: Electronic structure and diffusion mechanism of sodium in stacking faults of silicon

    SciTech Connect (OSTI)

    Ziebarth, Benedikt Gumbsch, Peter; Mrovec, Matous; Elsässer, Christian

    2014-09-07

    Sodium decorated stacking faults (SFs) were recently identified as the primary cause of potential-induced degradation in silicon (Si) solar-cells due to local electrical short-circuiting of the p-n junctions. In the present study, we investigate these defects by first principles calculations based on density functional theory in order to elucidate their structural, thermodynamic, and electronic properties. Our calculations show that the presence of sodium (Na) atoms leads to a substantial elongation of the Si-Si bonds across the SF, and the coverage and continuity of the Na layer strongly affect the diffusion behavior of Na within the SF. An analysis of the electronic structure reveals that the presence of Na in the SF gives rise to partially occupied defect levels within the Si band gap that participate in electrical conduction along the SF.

  4. SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process

    E-Print Network [OSTI]

    Dumont, Lucile; Benzo, Patrizio; Carrada, Marzia; Labbe, Christophe; Richard, Andrea L; Ingram, David C; Jadwisienczak, Wojciech M; Gourbilleau, Fabrice

    2015-01-01

    SiN x : Tb 3+-Yb 3+, an efficient down-conversion layer compatible with silicon solar cell process Abstract Tb 3+-Yb 3+ co-doped SiN x down-conversion layers compatible with silicon Photovoltaic Technology were prepared by reactive magnetron co-sputtering. Efficient sensitization of Tb 3+ ions through a SiN x host matrix and cooperative energy transfer between Tb 3+ and Yb 3+ ions were evidenced as driving mechanisms of the down-conversion process. In this paper, the film composition and microstructure are investigated alongside their optical properties, with the aim of maximizing the rare earth ions incorporation and emission efficiency. An optimized layer achieving the highest Yb 3+ emission intensity was obtained by reactive magnetron co-sputtering in a nitride rich atmosphere for 1.2 W/cm${}^2$ and 0.15 W/cm${}^2$ power density applied on the Tb and Yb targets, respectively. It was determined that depositing at 200 {\\textdegree}C and annealing at 850 {\\textdegree}C leads to comparable Yb 3+ emission inten...

  5. Determination of defect density of state distribution of amorphous silicon solar cells by temperature derivative capacitance-frequency measurement

    SciTech Connect (OSTI)

    Yang, Guangtao Swaaij, R. A. C. M. M. van; Dobrovolskiy, S.; Zeman, M.

    2014-01-21

    In this contribution, we demonstrate the application temperature dependent capacitance-frequency measurements (C-f) to n-i-p hydrogenated amorphous silicon (a-Si:H) solar cells that are forward-biased. By using a forward bias, the C-f measurement can detect the density of defect states in a particular energy range of the interface region. For this contribution, we have carried out this measurement method on n-i-p a-Si:H solar cells of which the intrinsic layer has been exposed to a H{sub 2}-plasma before p-type layer deposition. After this treatment, the open-circuit voltage and fill factor increased significantly, as well as the blue response of the solar cells as is concluded from external quantum efficiency. For single junction, n-i-p a-Si:H solar cells initial efficiency increased from 6.34% to 8.41%. This performance enhancement is believed to be mainly due to a reduction of the defect density in the i-p interface region after the H{sub 2}-plasma treatment. These results are confirmed by the C-f measurements. After H{sub 2}-plasma treatment, the defect density in the intrinsic layer near the i-p interface region is lower and peaks at an energy level deeper in the band gap. These C-f measurements therefore enable us to monitor changes in the defect density in the interface region as a result of a hydrogen plasma. The lower defect density at the i-p interface as detected by the C-f measurements is supported by dark current-voltage measurements, which indicate a lower carrier recombination rate.

  6. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

    SciTech Connect (OSTI)

    Liu, X.; Zhang, X. W. Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L.

    2014-11-03

    We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

  7. Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E. Bouree (1), V. Perraki (*) (1), G. Revel (2),R. Kishore (2) (**), J. L. Pastol (2), R. Mertens (3), M. Caymax (3) and M. Eyckmans

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    687 Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E avec les autres aptes à l'utilisation de Si-UMG bon marché. Abstract. 2014 Epitaxial solar cells have and electron diffusion length adequate to produce good solar cells. 10.3 % efficiency cells have been obtained

  8. 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Extended Abstracts and Papers, 19-22 August 2001, Estes Park, Colorado

    SciTech Connect (OSTI)

    Sopori, B.

    2001-08-16

    The 11th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions will include the various aspects of impurities and defects in silicon--their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions will review impurities and defects in crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing demands. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PV energy costs and meet the throughput demands of the future. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. Topics to be discussed are: Si Mechanical properties and Wafer Handling, Advanced Topics in PV Fundamentals, Gettering and Passivation, Impurities and Defects, Advanced Emitters, Crystalline Silicon Growth, and Solar Cell Processing. The workshop will also include presentations by NREL subcontractors who will review the highlights of their research during the current subcontract period. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV.

  9. Ultrathin crystalline silicon solar cells incorporating advanced light-trapping structures

    E-Print Network [OSTI]

    Branham, Matthew S

    2015-01-01

    Solar photovoltaics, which convert the energy potential of photons from the sun directly into electrical power, hold immense promise as a cornerstone of a clean energy future. Yet their cost remains greater than that of ...

  10. High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing

    E-Print Network [OSTI]

    Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

    2008-01-01

    One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

  11. High efficiency multijunction amorphous silicon alloy-based solar cells and modules

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.; Banerjeee, A.; Glatfelter, T.; Hoffman, K.; Xu, X. )

    1994-06-30

    We have achieved initial efficiency of 11.4% as confirmed by National Renewable Energy Laboratory (NREL) on a multijunction amorphous silicon alloy photovoltaic module of one-square-foot-area. [bold This] [bold is] [bold the] [bold highest] [bold initial] [bold efficiency] [bold confirmed] [bold by] [bold NREL] [bold for] [bold any] [bold thin] [bold film] [bold photovoltaic] [bold module]. After light soaking for 1000 hours at 50 [degree]C under one-sun illumination, a module with initial efficiency of 11.1% shows a stabilized efficiency of 9.5%. Key factors that led to this high performance are discussed.

  12. Fabrication of contacts for silicon solar cells including printing burn through layers

    SciTech Connect (OSTI)

    Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

    2014-06-24

    A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

  13. Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

    E-Print Network [OSTI]

    to the cost of pho- tovoltaic power PV .1 Significant resources have been in- vested toward improving to the underdevelopment of PV technology path- ways with cost reduction potential. For example, thinner wafers represent a promising path toward reduced materials costs and higher efficiency,18 yet these benefits have been offset

  14. High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    of narrow bandgap a-SiGe and µc-SiGe films deposited using different hydrogen dilution Section 3 Triple-junction a-Si Solar Cells with Heavily Doped Thin Interface Layers at the Tunnel Junctions Section 4 High 3-1 I-V performance of triple cell having heavily doped tunnel-junction interface layers

  15. Thermal Management of Solar Cells

    E-Print Network [OSTI]

    Saadah, Mohammed Ahmed

    2013-01-01

    Nanostructured Silicon- Based Solar Cells, 2013. X. C. Tong,heat exchangers, and solar cells," Sci-Tech News, vol. 65,in crystalline silicon solar cells," Renewable Energy, vol.

  16. MOCVD growth of GaAs solar cells on silicon substrates

    SciTech Connect (OSTI)

    Vernon, S.M.; Haven, V.E.; Geoffroy, L.M.; Sanfacon, M.M.; Mastrovito, A.L. )

    1992-12-01

    This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

  17. AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION

    E-Print Network [OSTI]

    Deng, Xunming

    improved, which may make them suitable for encapsulating solar cells once again. We have recently of terrestrial solar cells. It is well known that EVA turns yellow upon extended exposure to ultraviolet light-based polymers (silicones) may not show this effect. Although silicones were used to encapsulate solar cells

  18. The importance of surface texture to high silicon solar cell performance

    SciTech Connect (OSTI)

    Spitzer, M.B.; Bajgar, C.; Keavney, C.J.; Tobin, S.P.

    1984-08-01

    This paper reviews the utilization of surface texture for attainment of high conversion efficiency in Si p/n junction solar cells. Advantages and disadvantages of surface texture are discussed, and recent research on high efficiency ion-implanted cells that demonstrates some important aspects of texture is reviewed. Texture-etched cells with AMI conversion efficiency of 18% are reported and the manner in which use of texture might lead to even higher efficiency is discussed.

  19. Effect of Dual-Function Nano-Structured Silicon Oxide Thin Film on Multi-Junction Solar Cells

    SciTech Connect (OSTI)

    Yan, B.; Sivec, L.; Yue, G.; Jiang, C. S.; Yang, J.; Guha, S.

    2011-01-01

    We present our recent study of using nano-structured hydrogenated silicon oxide films (nc-SiO{sub x}:H) as a dual-function layer in multi-junction solar cells. The nc-SiO{sub x}:H films were deposited using very high frequency glow discharge of a SiH{sub 4} (or Si{sub 2}H{sub 6}), CO{sub 2}, PH{sub 3}, and H{sub 2} gas mixture. By optimizing deposition parameters, we obtained 'dual function' nc-SiO{sub x}:H material characterized by a conductivity suitable for use as an n layer and optical properties suitable for use as an inter-reflection layer. We tested the nc-SiO{sub x}:H by replacing the normal n-type material in the tunnel junction of a multi-junction structure. The advantage of the dual-function nc-SiO{sub x}:H layer is twofold; one is to simplify the cell structure, and the other is to reduce any optical loss associated with the inter-reflection layer. Quantum efficiency measurements show the gain in top cell current is equal to or greater than the loss in bottom cell current for a-Si:H/nc-Si:H structures. In addition, a thinner a-Si:H top cell with the nc-SiO{sub x}:H n layer improves the top-cell stability, thereby providing higher stabilized solar cell efficiency. We also used the dual-function layer between the middle and the bottom cells in a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. The gain in the middle cell current is {approx}1.0 mA/cm{sup 2}, leading to an initial active-area efficiency of 14.8%.

  20. Integration of a 2D Periodic Nanopattern Into Thin Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography

    E-Print Network [OSTI]

    Abdo, Islam; Deckers, Jan; Depauw, Valérie; Tous, Loic; Van Gestel, Dries; Guindi, Rafik; Gordon, Ivan; Daif, Ounsi El

    2015-01-01

    The integration of two-dimensional (2D) periodic nanopattern defined by nanoimprint lithography and dry etching into aluminum induced crystallization (AIC) based polycrystalline silicon (Poly-Si) thin film solar cells is investigated experimentally. Compared to the unpatterned cell an increase of 6% in the light absorption has been achieved thanks to the nanopattern which, in turn, increased the short circuit current from 20.6 mA/cm2 to 23.8 mA/cm2. The efficiency, on the other hand, has limitedly increased from 6.4% to 6.7%. We show using the transfer length method (TLM) that the surface topography modification caused by the nanopattern has increased the sheet resistance of the antireflection coating (ARC) layer as well as the contact resistance between the ARC layer and the emitter front contacts. This, in turn, resulted in increased series resistance of the nanopatterned cell which has translated into a decreased fill factor, explaining the limited increase in efficiency.

  1. Development of low cost contacts to silicon solar cells. Final report, 15 October 1978-30 April 1980

    SciTech Connect (OSTI)

    Tanner, D.P.; Iles, P.A.

    1980-01-01

    A summary of work done on the development of a copper based contact system for silicon solar cells is presented. The work has proceeded in three phases: (1) Development of a copper based contact system using plated Pd-Cr-Cu. Good cells were made but cells degraded under low temperature (300/sup 0/C) heat treatments. (2) The degradation in Phase I was identified as copper migration into the cells junction region. A paper study was conducted to find a proper barrier to the copper migration problem. Nickel was identified as the best candidate barrier and this was verified in a heat treatment study using evaporated metal layers. (3) An electroless nickel solution was substituted for the electroless chrominum solution in the original process. Efforts were made to replace the palladium bath with an appropriate nickel layer, but these were unsuccessful. 150 cells using the Pd-Ni-Cu contact system were delivered to JPL. Also a cost study was made on the plating process to assess the chance of reaching 5 cents/watt.

  2. Journal of Crystal Growth 287 (2006) 402407 Transition metals in photovoltaic-grade ingot-cast multicrystalline

    E-Print Network [OSTI]

    2006-01-01

    Journal of Crystal Growth 287 (2006) 402­407 Transition metals in photovoltaic-grade ingot-cast silicon (mc-Si) ingot casting for cost-effective solar cell wafer production. Highly sensitive to coat the inside of mc-Si ingot-casting crucibles, as well as the as-grown cast mc-Si material

  3. Joint Solar Silicon GmbH Co KG JSSI | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy ResourcesOrder atHills,New York: Energy Resources Jump to:Joice, Iowa:Solar

  4. Array automated assembly task low cost silicon solar array project. Phase 2. Final report

    SciTech Connect (OSTI)

    Olson, Clayton

    1980-12-01

    The initial contract was a Phase II Process Development for a process sequence, but with concentration on two particular process steps: laserscribing and spray-on junction formation. The add-on portion of the contract was to further develop these tasks, to incorporate spray-on of AR Coating and aluminum and to study the application of microwave energy to solar cell fabrication. The overall process cost projection is 97.918 cents/Wp. The major contributor to this excess cost is the module encapsulation materials cost. During the span of this contract the study of microwave application to solar cell fabrication produced the ability to apply this technique to any requirement of 600/sup 0/C or less. Above this temperature, non-uniformity caused the processing to be unreliable. The process sequence is described in detail, and a SAMICS cost analysis for each valid process step studied is presented. A temporary catalog for expense items is included, and engineering specifications for the process steps are given. (WHK)

  5. Angular behavior of the absorption limit in thin film silicon solar cells

    E-Print Network [OSTI]

    Naqavi, Ali; Söderström, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

    2013-01-01

    We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

  6. DOE Solar Energy Technologies Program TPP Final Report - A Value Chain Partnership to Accelerate U.S. PV Industry Growth, GE Global Research

    SciTech Connect (OSTI)

    Todd Tolliver; Danielle Merfeld; Charles Korman; James Rand; Tom McNulty; Neil Johnson; Dennis Coyle

    2009-07-31

    General Electric’s (GE) DOE Solar Energy Technologies TPP program encompassesd development in critical areas of the photovoltaic value chain that affected the LCOE for systems in the U.S. This was a complete view across the value chain, from materials to rooftops, to identify opportunities for cost reductions in order to realize the Department of Energy’s cost targets for 2010 and 2015. GE identified a number of strategic partners with proven leadership in their respective technology areas to accelerate along the path to commercialization. GE targeted both residential and commercial rooftop scale systems. To achieve these goals, General Electric and its partners investigated three photovoltaic pathways that included bifacial high-efficiency silicon cells and modules, low-cost multicrystalline silicon cells and modules and flexible thin film modules. In addition to these technologies, the balance of system for residential and commercial installations were also investigated. Innovative system installation strategies were pursed as an additional avenue for cost reduction.

  7. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  8. Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation

    E-Print Network [OSTI]

    Vora, Ankit; Pearce, Joshua M; Bergstrom, Paul L; Güney, Durdu Ö

    2014-01-01

    We study polarization independent improved light trapping in commercial thin film hydrogenated amorphous silicon (a-Si:H) solar photovoltaic cells using a three-dimensional silver array of multi-resonant nano-disk structures embedded in a silicon nitride anti-reflection coating (ARC) to enhance optical absorption in the intrinsic layer (i-a-Si:H) for the visible spectrum for any polarization angle. Predicted total optical enhancement (OE) in absorption in the i-a-Si:H for AM-1.5 solar spectrum is 18.51% as compared to the reference, and producing a 19.65% improvement in short-circuit current density (JSC) over 11.7 mA/cm2 for a reference cell. The JSC in the nano-disk patterned solar cell (NDPSC) was found to be higher than the commercial reference structure for any incident angle. The NDPSC has a multi-resonant optical response for the visible spectrum and the associated mechanism for OE in i-a-Si:H layer is excitation of Fabry-Perot resonance facilitated by surface plasmon resonances. The detrimental Staebl...

  9. Planar micro-optic solar concentration

    E-Print Network [OSTI]

    Karp, Jason Harris

    2010-01-01

    silicon cells 2 . Multi-junction solar cells hope becomethe motivation for multi- junction solar cells which layerassociated with multi-junction solar cells. The superior

  10. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect (OSTI)

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  11. Distribution and Chemical State of Cu-rich Clusters in Silicon: Preprint

    SciTech Connect (OSTI)

    Buonassisi, T.; Marcus, M. A.; Istratov, A. A.; Heuer, M.; Ciszek, T. F.; Lai, B.; Cai, Z.; Weber, E. R.

    2004-08-01

    the chemical state and distribution of Cu-rich clusters were determined in four different silicon-based materials with varying contamination pathways and degrees of oxygen concentration, including as-grown multicrystalline silicon. In all four samples, Cu3Si was the only chemical state observed. Cu3Si clusters were observed at structural defects within all four materials; XBIC measurements revealed that the presence of Cu3Si corresponds to increased recombination activity. Oxidized Cu compounds are not likely to form in silicon. The +1 eV edge shift in the -XAS absorption spectrum of Cu3Si relative to Cu metal is believed to be an indication of a degree of covalent bonding between Cu atoms and their silicon neighbors.

  12. Thermal Management of Solar Cells

    E-Print Network [OSTI]

    Saadah, Mohammed Ahmed

    2013-01-01

    heat exchangers, and solar cells," Sci-Tech News, vol. 65,Solar Energy Materials and Solar Cells, vol. 86, pp. 451-in crystalline silicon solar cells," Renewable Energy, vol.

  13. Thermal Management of Solar Cells

    E-Print Network [OSTI]

    Saadah, Mohammed Ahmed

    2013-01-01

    heat exchangers, and solar cells," Sci-Tech News, vol. 65,Solar Energy Materials and Solar Cells, vol. 86, pp. 451-Nanostructured Silicon- Based Solar Cells, 2013. X. C. Tong,

  14. European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2DO.2.3 N-TYPE CZ-SILICON SOLAR CELLS WITH

    E-Print Network [OSTI]

    25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2DO.2.3 N Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal, Germany 2 centrotherm stack to the screen-printed Al-p+ emitter surface of our solar cells, where we demonstrate a conversion

  15. 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers, August 11-14, 2002, Breckenridge, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2002-08-01

    The 12th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. Discussions will include various aspects of impurities and defects in silicon-their properties, the dynamics during processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PV energy costs and meet the production demands of the future. It will also provide an excellent opportunity for researchers, in private industry and at universities, to prioritize mutual needs for future collaborative research. Sessions and panel discussions will review recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and manufacturing approaches suitable for future manufacturing demands . Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. In addition, there will be two poster sessions presenting the latest research and development results.

  16. The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

    SciTech Connect (OSTI)

    Gerlach, D.; Wilks, R. G.; Wimmer, M.; Felix, R.; Gorgoi, M.; Lips, K.; Rech, B.; Wippler, D.; Mueck, A.; Meier, M.; Huepkes, J.; Lozac'h, M.; Ueda, S.; Sumiya, M.; Yoshikawa, H.; Kobayashi, K.; Baer, M.

    2013-07-08

    The electronic structure of the interface between the boron-doped oxygenated amorphous silicon 'window layer' (a-SiO{sub x}:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon ({mu}c-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 {+-} 0.27) eV and (-3.37 {+-} 0.27) eV, respectively. A lower tunnel junction barrier height at the {mu}c-Si:H(B)/ZnO:Al interface compared to that at the a-SiO{sub x}:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a {mu}c-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

  17. Nucleation and solidification of silicon for photovoltaics

    E-Print Network [OSTI]

    Appapillai, Anjuli T. (Anjuli Tara)

    2010-01-01

    The majority of solar cells produced today are made with crystalline silicon wafers, which are typically manufactured by growing a large piece of silicon and then sawing it into ~200 pm wafers, a process which converts ...

  18. System and method for liquid silicon containment

    SciTech Connect (OSTI)

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2014-06-03

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  19. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2013-05-28

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  20. Solar Cell Nanotechnology Final Technical Report

    SciTech Connect (OSTI)

    Das, Biswajit

    2014-05-07

    The objective of this project is to develop a low cost nonlithographic nanofabrication technology for the fabrication of thin film porous templates as well as uniform arrays of semiconductor nanostructures for the implementation of high efficiency solar cells. Solar cells based on semiconductor nanostructures are expected to have very high energy conversion efficiencies due to the increased absorption coefficients of semiconductor nanostructures. In addition, the thin film porous template can be used for optimum surface texturing of solar cells leading to additional enhancement in energy conversion efficiency. An important requirement for these applications is the ability to synthesize nanostructure arrays of different dimensions with good size control. This project employed nanoporous alumina templates created by the anodization of aluminum thin films deposited on glass substrates for the fabrication of the nanostructures and optimized the process parameters to obtain uniform pore diameters. An additional requirement is uniformity or regularity of the nanostructure arrays. While constant current anodization was observed to provide controlled pore diameters, constant voltage anodization was needed for regularity of the nanostructure arrays. Thus a two-step anodization process was investigated and developed in this project for improving the pore size distribution and pore periodicity of the nanoporous alumina templates. CdTe was selected to be the active material for the nanowires, and the process for the successful synthesis of CdTe nanowires was developed in this project. Two different synthesis approaches were investigated in this project, electrochemical and electrophoretic deposition. While electrochemical synthesis was successfully employed for the synthesis of nanowires inside the pores of the alumina templates, the technique was determined to be non-optimum due to the need of elevated temperature that is detrimental to the structural integrity of the nanoporous alumina templates. In order to eliminate this problem, electrophoretic deposition was selected as the more appropriate technique, which involves the guided deposition of semiconductor nanoparticles in the presence of ultrasonic energy to form the crystalline nanowires. Extensive experimental research was carried out to optimize the process parameters for formation of crystalline nanowires. It was observed that the environmental bath temperature plays a critical role in determining the structural integrity of the nanowires and hence their lengths. Investigation was carried out for the formation of semitransparent ohmic contacts on the nanowires to facilitate photocurrent spectroscopy measurements as well as for solar cell implementation. Formation of such ohmic contacts was found to be challenging and a process involving mechanical and electrochemical polishing was developed to facilitate such contacts. The use of nanoporous alumina templates for the surface texturing of mono- and multi-crystalline solar cells was extensively investigated by electrochemical etching of the silicon through the pores of the nanoporous templates. The processes for template formation as well as etching were optimized and the alumina/silicon interface was investigated using capacitance-voltage characterization. The process developed was found to be viable for improving solar cell performance.

  1. ULTRATHIN FLEXIBLE CRYSTALLINE SILICON: MICROSYSTEMS ENABLED PHOTOVOLTAICS

    E-Print Network [OSTI]

    ULTRATHIN FLEXIBLE CRYSTALLINE SILICON: MICROSYSTEMS ENABLED PHOTOVOLTAICS Jose L. Cruz Photovoltaics (MEPV) is a technique to create solar cells relying on tools from the microsystems and integrated

  2. Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon...

    Office of Scientific and Technical Information (OSTI)

    Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon Solar Cells: Preprint Bolen, M. L.; Grover, S.; Teplin, C. W.; Bobela, D.; Branz, H. M.; Stradins, P. 08 HYDROGEN; 14...

  3. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

    1998-08-11

    A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

  4. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, D.S.; Basore, P.A.; Schubert, W.K.

    1998-08-11

    A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

  5. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    microcrystalline silicon thin films and solar cells. Journalof a p-i-n thin-film solar cell with front transparent con-microcrystalline silicon thin film solar cells. Solar Energy

  6. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  7. The Influence of High-Energy Lithium Ion Irradiation on Electrical Characteristics of Silicon and GaAs Solar Cells

    E-Print Network [OSTI]

    B. Jayashree; Ramani; M. C. Radhakrishna; Anil Agrawal; Saif Ahmad Khan; A. Meulenberg

    2006-10-22

    Space-grade Si and GaAs solar cells were irradiated with 15 & 40 MeV Li ions. Illuminated (AM0 condition) and unilluminated I-V curves reveal that the effect of high-energy Li ion irradiation has produced similar effects to that of proton irradiation. However, an additional, and different, defect mechanism is suggested to dominate in the heavier-ion results. Comparison is made with proton-irradiated solar-cell work and with non-ionizing energy-loss (NIEL) radiation-damage models.

  8. Growth of nano-and microcrystalline silicon thin films at low temperature by pulsed electron deposition

    E-Print Network [OSTI]

    Zexian, Cao

    in a multi-junction design [4]. The solar cells based on nanocrystalline silicon (nc-Si) films have now in electronic and optoelectronic devices, particularly in the fabrication of solar cells. Noticeably, thin-film silicon solar cells take a larger market share than the single- and polycrystalline silicon solar cells

  9. Enhanced optical absorption in nanopatterned silicon thin films with a nano-cone-hole

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    .6845, 040.5350. The silicon solar cell is presently dominating the solar cell market, owing to its abundant supply, nearly ideal band gap, and mature fabrication process. Most commer- cial silicon solar cells is consumed, leading to a higher cost for the final product [1]. The thin film silicon solar cell

  10. Preparation of silicon substrates for gallium-arsenide solar cells by electron-beam-pulse processing. Annual technical report, March 15, 1980-March 15, 1981

    SciTech Connect (OSTI)

    Tobin, S.P.

    1981-05-01

    In the past year a process has been developed for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency GaAs solar cells on low-cost silicon substrates in an economical manner. Thin (less than or equal to 1 ..mu..m) layers of Ge have been deposited on Si wafers by chemical vapor deposition (CVD) in single-crystal form or by vacuum evaporation in amorphous or polycrystalline form. The CVD films have given the best results, with good crystallinity and electrical properties as deposited. A persistent problem with surface roughness in the as-deposited films has been overcome by pulsed electron beam melting of the near-surface region in time periods on the order of a microsecond. The brief molten period smooths the surface features without compromising the crystallinity, electrical properties, or interfacial abruptness of the Ge film. These layers are of a quality suitable for further evaluation by GaAs growth and cell processing in the next phase of the program. Pulsed electron beam processing also serves a vital function for the evaporated Ge films, which are melted by the beam and recrystallized on the Si substrates, epitaxial single crystal Ge layers result from amorphous or polycrystalline starting films. To date results have not been as satisfactory as for CVD films; contamination from several sources has been identified as a problem. Many of these sources have been eliminated, so that a decision on the intrinsic limitations of the evaporated film approach should be made in the near future.

  11. Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based

    E-Print Network [OSTI]

    of the past decade, a suite of synchrotron-based analytical techniques has been developed to study efficiency-limiting

  12. Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Final report, 30 June 1979-29 June 1980

    SciTech Connect (OSTI)

    Sopori, B.L.

    1980-11-01

    The objectives of this program were: (1) to develop appropriate measurement techniques to facilitate a quantitative study of the electrical activity of structural defects and at a grain boundary (G.B.) in terms of generation-recombination, barrier height, and G.B. conductivity; (2) to characterize G.B.s in terms of physical properties such as angle of misfit and local stress, and to correlate them with the electrical activity; (3) to determine the influence of solar cell processing on the electrical behavior of structural defects and G.B.s; and (4) to evaluate polycrystalline solar cell performance based on the above study, and to compare it with the experimentally measured performance. Progress is reported in detail. (WHK)

  13. 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Summary Discussion, 10-13 August 2003, Vail, Colorado

    SciTech Connect (OSTI)

    Sopori, B.; Sinton, R.; Tan, T.; Swanson, D.

    2004-01-01

    The 13th Workshop discussion sessions addressed recent progress, critical issues in implementing new technologies, and the role of fundamental R&D in the growing PV industry. For the first time, we included a rump session, which was held on Sunday evening, August 10. This session included a panel of representatives, from various photovoltaic companies, who led a discussion of''R&D Challenges in Si PV.'' A special poster/presentation session was held on Monday evening, August 11, in which NREL/DOE subcontractors highlighted their results of research performed during the current subcontract period. This session served as a subcontract review. The workshop offered special sessions to discuss: (1) High-Efficiency Si Solar Cells, which reviewed progress made in implementing high-efficiency Si solar cell fabrication processes in the manufacturing environment; (2) Advanced Processing, as future potential approaches for making Si solar cells; (3) Commercial Issues, which addressed basic understanding behind recent processes that have been used by the PV industry; and (4) Automation and Equipment, to address capabilities and requirements of new manufacturing equipment.

  14. Method for fabricating pixelated silicon device cells

    DOE Patents [OSTI]

    Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis; Nelson, Jeffrey S.; Anderson, Benjamin John

    2015-08-18

    A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps.

  15. Enhancement of oxidation resistance of graphite foams by polymer derived-silicon carbide coating for concentrated solar power applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, T.; Singh, D.; Singh, M.

    2015-05-01

    Graphite foam with extremely high thermal conductivity has been investigated to enhance heat transfer of latent heat thermal energy storage (LHTES) systems. However, the use of graphite foam for elevated temperature applications (>600 °C) is limited due to poor oxidation resistance of graphite. In the present study, oxidation resistance of graphite foam coated with silicon carbide (SiC) was investigated. A pre-ceramic polymer derived coating (PDC) method was used to form a SiC coating on the graphite foams. Post coating deposition, the samples were analyzed by scanning electron microscopy and energy dispersive spectroscopy. The oxidation resistance of PDC-SiC coating was quantifiedmore »by measuring the weight of the samples at several measuring points. The experiments were conducted under static argon atmosphere in a furnace. After the experiments, oxidation rates (%/hour) were calculated to predict the lifetime of the graphite foams. The experimental results showed that the PDC-SiC coating could prevent the oxidation of graphite foam under static argon atmosphere up to 900 °C.« less

  16. Enhancement of oxidation resistance of graphite foams by polymer derived-silicon carbide coating for concentrated solar power applications

    SciTech Connect (OSTI)

    Kim, T.; Singh, D.; Singh, M.

    2015-05-01

    Graphite foam with extremely high thermal conductivity has been investigated to enhance heat transfer of latent heat thermal energy storage (LHTES) systems. However, the use of graphite foam for elevated temperature applications (>600 °C) is limited due to poor oxidation resistance of graphite. In the present study, oxidation resistance of graphite foam coated with silicon carbide (SiC) was investigated. A pre-ceramic polymer derived coating (PDC) method was used to form a SiC coating on the graphite foams. Post coating deposition, the samples were analyzed by scanning electron microscopy and energy dispersive spectroscopy. The oxidation resistance of PDC-SiC coating was quantified by measuring the weight of the samples at several measuring points. The experiments were conducted under static argon atmosphere in a furnace. After the experiments, oxidation rates (%/hour) were calculated to predict the lifetime of the graphite foams. The experimental results showed that the PDC-SiC coating could prevent the oxidation of graphite foam under static argon atmosphere up to 900 °C.

  17. 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim www.pss-rapid.com

    E-Print Network [OSTI]

    , Daniel Macdonald2 , Karsten Bothe1 , and Jan Schmidt1 1 Institute for Solar Energy Research Hamelin (ISFH- talline silicon (c-Si) for solar cells [1], especially in block- cast multicrystalline silicon (mc-Si). So. We take advantage of the dependence of the dissociation rate on the Fei concentration [10

  18. EE580 Solar Cells Todd J. Kaiser

    E-Print Network [OSTI]

    Kaiser, Todd J.

    7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 06 · Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies · A) Crystalline Silicon · B) Thin Film · C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

  19. NREL: Technology Transfer - The Quest for Inexpensive Silicon...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Quest for Inexpensive Silicon Solar Cells Get the Adobe Flash Player to see this video. In this video, NREL scientists Howard Branz and Chaz Teplin talk more about the silicon...

  20. Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

    SciTech Connect (OSTI)

    Stradins, P.; Essig, S.; Nemeth, W.; Lee, B. G.; Young, D.; Norman, A.; Liu, Y.; Luo, J.-W.; Warren, E.; Dameron, A.; LaSalvia, V.; Page, M.; Rohatgi, A.; Upadhyaya, A.; Rounsaville, B.; Ok, Y.-W.; Glunz, S.; Benick, J.; Feldmann, F.; Hermle, M.

    2014-12-01

    We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer are examined, including transparent n-type oxides and n+-doped poly-Si. SiO2/n+-poly-Si full-area, induced-junction back surface field contacts to n-FZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.

  1. Optimized Designs and Materials for Nanostructure Based Solar Cells

    E-Print Network [OSTI]

    Shao, Qinghui

    2009-01-01

    GaInP/GaAs/InGaAs triple-junction solar cells grown invertedS. Guha, “Triple-junction amorphous silicon alloy solar cell

  2. Breakthrough Cutting Technology Promises to Reduce Solar Costs

    Broader source: Energy.gov [DOE]

    Silicon Genesis advancing the field of solar energy by developing a process that will virtually eliminate all waste when cutting materials needed to implement solar technology.

  3. Matter & Energy Solar Energy

    E-Print Network [OSTI]

    Rogers, John A.

    See Also: Matter & Energy Solar Energy· Electronics· Materials Science· Earth & Climate Energy at the University of Illinois, the future of solar energy just got brighter. Although silicon is the industry Electronics Over 1.2 Million Electronics Parts, Components and Equipment. www.AlliedElec.com solar energy

  4. TRANSMISSION ELECTRON MICROSCOPY OF THE TEXTURED SILVER BACK REFLECTOR OF A THIN FILM SILICON SOLAR CELL: FROM CRYSTALLOGRAPHY TO OPTICAL ABSORPTION

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    in amorphous, microcrystalline and micromorph thin-film Si solar cells is an important and active field-reflector of thin-film Si solar cells. 1 INTRODUCTION The study of light trapping in thin-film Si solar cells for an optimized back reflector structure in a microcrystalline thin film Si solar cell, when compared with the use

  5. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se{sub 2} thin-film solar cell absorbers

    SciTech Connect (OSTI)

    Lehmann, Jascha; Lehmann, Sebastian; Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch.; Bär, Marcus; Sadewasser, Sascha

    2014-12-21

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for “realistic” surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In{sub 1-x}Ga{sub x})Se{sub 2} thin films with an average x?=?[Ga]/([In]?+?[Ga])?=?0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH{sub 3}-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is – apart from a slight change in surface composition – identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

  6. Solar Energy Materials & Solar Cells 78 (2003) 567595 Low-mobility solar cells: a device physics primer

    E-Print Network [OSTI]

    Schiff, Eric A.

    2003-01-01

    Solar Energy Materials & Solar Cells 78 (2003) 567­595 Low-mobility solar cells: a device physics, Syracuse, New York 13244-1130, USA Abstract The properties of pin solar cells based on photogeneration for the solar conversion efficiency of amorphous silicon-based cells that are limited by valence bandtail

  7. Apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel (San Jose, CA)

    1986-05-20

    Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  8. European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2.4 HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SILICON SOLAR CELLS WITH CELL

    E-Print Network [OSTI]

    as minimizing the consumption of energy and material. The effect of the cell thickness on the solar cell27th European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2 Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany 2 Renewable

  9. Thermodynamics, Entropy, Information and the Efficiency of Solar Cells

    E-Print Network [OSTI]

    Abrams, Zeev R.

    2012-01-01

    At Silicon Solar Cell Performance. Energ. Conv. 11, 63 (efficiency of solar cells. Sol. Energ. Mat. Sol. C. 139. E.Solar Cells: Comparison between Carrier Multiplication and Down- Conversion, Sol. Energ.

  10. CRADA Final Report: Process development for hybrid solar cells

    E-Print Network [OSTI]

    Ager, Joel W

    2011-01-01

    development for hybrid solar cells Summary of the specific20 wafers with full tandem solar cell test structure perIII–Nitride/Silicon Tandem Solar Cell,” Appl. Phys. Express

  11. CRADA Final Report: Process development for hybrid solar cells

    E-Print Network [OSTI]

    Ager, Joel W

    2011-01-01

    development for hybrid solar cells Summary of the specific20 wafers with full tandem solar cell test structure perNitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2

  12. Solar-Powered Smart Wireless Camera Network for Outdoor Monitoring

    E-Print Network [OSTI]

    Abas, Kevin Mathys

    2015-01-01

    film and crystalline-silicon solar panels, May 2012. http://Section 4. e) Larger solar panel and smart battery chargerSlugCam to use smaller size solar panel and battery, and yet

  13. Characterization of temperature profile in furnace and solubility of iron in silicon

    E-Print Network [OSTI]

    Modi, Vrajesh Y

    2011-01-01

    A better understanding of the behavior of impurities, such as iron, in silicon can lead to increases in solar cell efficiency. The purpose of this thesis was to study the behavior of iron in silicon via three sub-tasks: ...

  14. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    Solar Energy Materials and Solar Cells, 86:207–216, 2005. [silicon thin films and solar cells. Journal of Appliedtrapping in nanostructured solar cells. ACS Nano, 5:10055–

  15. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    Solar Energy Materials and Solar Cells, 86:207–216, 2005. [silicon thin films and solar cells. Journal of Appliedof a p-i-n thin-film solar cell with front transparent con-

  16. Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells

    E-Print Network [OSTI]

    Deceglie, Michael G.

    2014-01-01

    trapping in silicon thin film solar cells," Solar Energy,textured surfaces in thin-film solar cells," Opt. Express,Design of Plasmonic Thin-Film Solar Cells with Broadband

  17. Solar fuels : integration of molecular catalysts with p-type semiconductor photocathode

    E-Print Network [OSTI]

    Kumar, Bhupendra

    2012-01-01

    H. Fundamentals of solar cells : photovoltaic solar energygrown Silicon nanowires photovoltaic cell with solid/liquidmulti junction photovoltaic cell which can generate a

  18. Investigation of the Role of Trap States in Solar Cell Reliability using Photothermal Deflection Spectroscopy

    E-Print Network [OSTI]

    Bezryadina, Anna Sergeyevna

    2012-01-01

    of improvement of efficiency for each type of solar cells,improvement of the electronic properties of the material. Hydrogenated amorphous silicon (a-Si:H) solar cells

  19. Photocharge transport and recombination measurements in amorphous silicon films and solar cells by photoconductive frequency mixing. Annual subcontract report, May 13, 1994--May 12, 1995

    SciTech Connect (OSTI)

    Braunstein, R.; Yang, Y.; Dong, S. [Univ. of California, Los Angeles, CA (United States)] [Univ. of California, Los Angeles, CA (United States)

    1995-10-01

    The continuous decay of electron drift mobility in intrinsic a-Si:H and a-SiC:H upon light soaking was investigated by the photomixing technique. The photoconductivity, lifetime and drift mobility in intrinsic hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon carbide (a-SiC:H) while light-soaking were determined using a photomixing technique. In addition to the decay of the photoconductivity and electron lifetime, continuous decay of the electron drift mobility was found during the light soaking process, which reveals a new phenomenon associated with the Staebler-Wronski effect. The drift mobility decreased by a factor of 2 for 20 hour light soaking at 2.5 sun intensity. Experimental data were fitted to a stretched exponential law. Different stretched-exponential parameters for photoconductivity, lifetime and drift mobility were obtained, which indicates the production of defects with different generation kinetics upon light soaking.

  20. Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

    SciTech Connect (OSTI)

    Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

    2010-04-30

    The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

  1. Solar Chemical Peculiarities?

    E-Print Network [OSTI]

    Carlos Allende Prieto

    2006-12-08

    Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar "analogs", the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel.

  2. Project Profile: Development and Productization of High-Efficiency, Low-Cost Building-Integrated PV Shingles Using Monocrystalline Silicon Thin-Film Solar Cells

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Solexel-OC team is developing a BIPV roofing shingle product that includes low-profile solar modules and a unique attachment system that will be fastened directly to the roof and incorporates...

  3. Solar cells with a twist Comments ( 35)

    E-Print Network [OSTI]

    Rogers, John A.

    Solar cells with a twist Article Comments ( 35) JULIE STEENHUYSEN REUTERS OCTOBER 7, 2008 AT 9:58 AM EDT CHICAGO -- U.S. researchers have found a way to make efficient silicon-based solar cells of buildings as opportunities for solar energy," Prof. Rogers said in a telephone interview. Solar cells, which

  4. Solar Workshop: Terawatt Challenge!!? Sponsored by UD Energy Institute

    E-Print Network [OSTI]

    Firestone, Jeremy

    Solar Workshop: Terawatt Challenge!!? Sponsored by UD Energy Institute February 28, 2014 Clayton for a High Efficiency Silicon Based Solar Cells Henri Chevrel Air Liquide 3:30 ­ 4:00 pm Recent Advances-Efficiency Silicon Solar Cells Zak Holman Arizona State University 4:30 ­ 5:00 pm Upconversion and Related Approaches

  5. Photocharge Transport and Recombination Measurements in Amorphous Silicon Films and Solar Cells by Photoconductive Frequency Mixing: Final Subcontract Report: 13 May 1994 - 15 January 1998

    SciTech Connect (OSTI)

    Braunstein, R.; Tang, Y.; Dong, S.; Liebe, J.; Sun, G.; Kattwinkel, A. (University of California: Los Angeles, California)

    1999-05-04

    This report describes work performed during this subcontract by the University of California. The photoconductivity, lifetime, and drift mobility of intrinsic hydrogenated amorphous silicon (a-Si:H), hydrogenated amorphous silicon carbide (a-SiC:H), and hydrogenated amorphous silicon germanium (a-SiGe:H) were determined using a photomixing technique in the as prepared and light-soaked states. In addition to the decay of the photoconductivity and electron lifetime, continuous decay of the electron drift mobility was found during the light-soaking process (Staebler-Wronski effect). Experimental data were fitted to a stretched exponential law. Different stretched-exponential parameters for photoconductivity, lifetime, and drift mobility were obtained, which indicates the production of defects with different generation kinetics upon light soaking. The transport properties of intrinsic a-Si:H samples (which were produced by the hot-wire technique at NREL at different substrate temperatures such that the hydrogen content ranged from >10% to <1%), were systematically studied. It was found that with increasing substrate temperature, the lifetime, the drift mobility, and the photoconductivity decreased, but the Urbach energy ({approx} 0.1 eV below the conduction band) increased. These results indicate that for the a-Si:H films with increasing deposition temperature, the density of positively charged, negatively charged, and neutral defects all show a tendency to increase, in agreement with the results observed by other workers employing other measurement techniques. Researchers also found that the drift mobility of these samples increases and the lifetime decreases with increasing electric field, while the mt product is essentially independent of the electric field in the range of 1,000-10,000 V/cm. The electric field dependence of mobility (Dm) /m0/ (DE) in the as-grown or/and annealed states are always larger than that in the light-soaked state. This electric field dependence of mobility can be explained by the existence of long-range potential fluctuations. Photoemission measurements in air were performed on a-Si:H, a-SiC:H, and transparent conducting oxide layers, and revealed inhomogeneities of composition or surface contamination.

  6. High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells: Final Technical Report, 1 September 2001--6 March 2005

    SciTech Connect (OSTI)

    Deng, X.

    2006-01-01

    The objectives for the University of Toledo are to: (1) establish a transferable knowledge and technology base for fabricating high-efficiency triple-junction a-Si-based solar cells, and (2) develop high-rate deposition techniques for the growing a-Si-based and related alloys, including poly-Si, c-Si, a-SiGe, and a-Si films and photovoltaic devices with these materials.

  7. Device Architecture Simplification of Laser Pattering in High-Volume Crystalline Silicon Solar Cell Fabrication using Intensive Computation for Design and Optimization

    SciTech Connect (OSTI)

    Grupp Mueller, Guenther; Herfurth, Hans; Dunham, Scott; Xu, Baomin

    2013-11-15

    Prices of Si based solar modules have been continuously declining in recent years. Goodrich is pointing out that a significant portion of these cost reductions have come about due to ?economies of scale? benefits, but there is a point of diminishing returns when trying to lower cost by simply expanding production capacity [1]. Developing innovative high volume production technologies resulting in an increase of conversion efficiency without adding significant production cost will be necessary to continue the projected cost reductions. The Foundational Program to Advance Cell Efficiency (F-PACE) is seeking to achieve this by closing the PV efficiency gap between theoretical achievable maximum conversion efficiency - 29% for c-Si - and the current typical production - 18.5% for a typical full area back contact c-Si Solar cell ? while targeting a module cost of $0.50/Watt . The research conducted by SolarWorldUSA and it?s partners within the FPACE framework focused on the development of a Hybrid metal-wrap-through (MWT) and laser-ablated PERC solar cell design employing a extrusion metallization scheme to achieve >20% efficient devices. The project team was able to simulate, develop and demonstrate the technologies necessary to build p-type MWT PERC cells with extruded front contacts. Conversion efficiencies approaching 20% were demonstrated and a path for further efficiency improvements identified. A detailed cost of ownership calculation for such a device was based on a NREL cost model and is predicting a $/Watt cost below 85 cents on a 180 micron substrate. Several completed or planned publications by SolarWorldUSA and our partners are based on the research conducted within this project and are adding to a better understanding of the involved technologies and materials. Several aspects and technologies of the proposed device have been assessed in regards to technical effectiveness and economic feasibility. It has been shown in a pilot demonstration with wafer thicknesses down to 120 micron that further wafer thickness reduction is only economically viable if handling and contact formation limitations are addressed simultaneously. Furthermore the project partners assessed and demonstrated the feasibility of processing wafers with vias connecting front and back sides through a PERC cell process and aligning and connecting those vias with a non-contact metallization. A close cooperation between industry and institutes of higher education in the Pacific Northwest as shown in this project is of direct benefit to the public and is contributing to the education of the next generation of PV engineers and scientist.

  8. Structure of All-Polymer Solar Cells Impedes Efficiency

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    thin films of semiconducting polymers as a possible alternative to silicon-based solar cells. Such devices would have the advantages of being cheap to produce,...

  9. New, Cost-Competitive Solar Plants for Electric Utilities

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Magazine's R&D 100 award for silicon solar cell performance with record conversion efficiency. Around the same time, Amonix also developed the large MegaModule platform...

  10. New Study Shows Solar Manufacturing Costs Not Driven Primarily...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    regions. Their analysis indicates that further innovations in crystalline silicon solar cell technology may spur new investment, significantly enhancing access to capital for...

  11. Understanding and improving hole transport in hydrogenated amorphous silicon photovoltaics

    E-Print Network [OSTI]

    Johlin, Eric (Eric Carl)

    2014-01-01

    While hydrogenated amorphous silicon (a-Si:H) solar cells have been studied extensively for the previous four decades, the low performance of the devices is still not well understood. The poor efficiency (below 10%, even ...

  12. Process and apparatus for casting multiple silicon wafer articles

    DOE Patents [OSTI]

    Nanis, Leonard (Palo Alto, CA)

    1992-05-05

    Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

  13. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    SciTech Connect (OSTI)

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

    2014-09-26

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

  14. Intermediate Band Properties of Femtosecond-Laser Hyperdoped Silicon

    E-Print Network [OSTI]

    Mazur, Eric

    -dependent electronic transport measurements. The measurement data indicate that these samples form a localized IB solubility. Hy- perdoped silicon is promising for improving efficiencies of solar cells: the material exhibits broad-band light absorption to wavelengths deep below the corresponding bandgap energy of silicon

  15. ForPeerReview Hybrid structures of porous silicon and conjugated polymers

    E-Print Network [OSTI]

    Asscher, Micha

    called "third generation solar cells [11]). A porous matrix, particularly a porous silicon (PS) matrixForPeerReview Hybrid structures of porous silicon and conjugated polymers for photovoltaic of Jerusalem, Physics Keywords: Porous silicon, conjugated polymers, photovoltaics Wiley-VCH physica status

  16. Solar cell array interconnects

    DOE Patents [OSTI]

    Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

    1995-11-14

    Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

  17. Solar cell array interconnects

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA); Colella, Nicolas J. (Livermore, CA); Williams, Kenneth A. (Livermore, CA)

    1995-01-01

    Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

  18. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

    E-Print Network [OSTI]

    Mariani, Giacomo

    2013-01-01

    silicon nanowires as solar cells and nanoelectronic powerTowards efficient hybrid solar cells based on fully polymerSariciftci, N. S. Hybrid solar cells, Inorg. Chim. Acta 361,

  19. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    modeling of ? -Si : H solar cells with rough interfaces:of a p-i-n thin-film solar cell with front transparent con-amorphous-silicon-based P-I-N solar cells deposited on rough

  20. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

  1. Optimized Designs and Materials for Nanostructure Based Solar Cells

    E-Print Network [OSTI]

    Shao, Qinghui

    2009-01-01

    efficiency of solar panels and power to weight ratio insolar cells, there exist two basic processes to convert sunlight power topower to a load connected when charged by Sun. The typical output voltage of a silicon based solar

  2. Ohmic contacts for solar cells by arc plasma spraying

    DOE Patents [OSTI]

    Narasimhan, Mandayam C. (Seekonk, MA); Roessler, Barton (Barrington, RI); Loferski, Joseph J. (Providence, RI)

    1982-01-01

    The method of applying ohmic contacts to a semiconductor, such as a silicon body or wafer used in solar cells, by the use of arc plasma spraying, and solar cells resulting therefrom.

  3. Process and apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel (San Jose, CA)

    1988-06-28

    Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  4. High voltage series connected tandem junction solar battery

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  5. Amorphous semiconductor solar cell

    DOE Patents [OSTI]

    Dalal, Vikram L. (Newark, DE)

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  6. 53119782000 Solar Energy Conversion

    E-Print Network [OSTI]

    Chen, Yang-Yuan

    or degrade of the photocatalyst) The Challenges: Cost + Efficiency Earth ultimate recoverable resource of oil Solar Cells Work Operation of a PV cellThe effect of the electric field in a PV cell General schematic of a residential PV system with battery storage Basic structure of a generic silicon PV cell #12;-2 (photo courtesy

  7. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, 1 May 1991--30 April 1992

    SciTech Connect (OSTI)

    Gordon, R.G. [Harvard Univ., Cambridge, MA (United States). Dept. of Chemistry

    1993-04-01

    This report describes work to improve the performance of solar cells by improving the electrical and optical properties of their transparent conducting oxides (TCO) layers. Boron-doped zinc-oxide films were deposited by atmospheric pressure chemical vapor deposition in a laminar-flow reactor from diethyl zinc, tert-butanol, and diborane in the temperature range between 300{degrees}C and 420{degrees}C. When the deposition temperature was above 320{degrees}C, both doped and undoped films have highly oriented crystallites with their c-axes perpendicular to the substrate plane. Films deposited from 0.07% diethyl zinc and 2.4% tert-butanol have electron densities between 3.5 {times} 10{sup 20} cm{sup {minus}3} and 5.5 {times} 10{sup 20} cm{sup {minus}3}, conductivities between 250 {Omega}{sup {minus}1} and 2500 {Omega}{sup {minus}1} and mobilities between 2.5 cm{sup 2}/V-s and 35.0 cm{sup 2}/V-s, depending on dopant concentration, film thickness, and deposition temperature. Optical measurements show that the maximum infrared reflectance of the doped films is close to 90%, compared to about 20% for undoped films. Film visible absorption and film conductivity were found to increase with film thickness. The ratio of conductivity to visible absorption coefficient for doped films was between 0.1 {Omega} and 1.1 {Omega}{sup {minus}1}. The band gap of the film changes from 3.3 eV to 3.7 eV when the film is doped with 0.012% diborane.

  8. Single crystalline mesoporous silicon nanowires

    E-Print Network [OSTI]

    Hochbaum, A.I.

    2010-01-01

    effects in highly porous crystalline silicon, Nature 1991,J. , Fabrication of single-crystalline silicon nanowires bySingle crystalline mesoporous silicon nanowires Allon I.

  9. Single crystalline mesoporous silicon nanowires

    E-Print Network [OSTI]

    Hochbaum, Allon

    2010-01-01

    Quantum Dots: A General crystalline silicon, Nature 1991,1998, 31, 1927-1949. single-crystalline silicon nanowires byof their facilities. Single crystalline mesoporous silicon

  10. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  11. Measurement of light capture in solar cells from silver- and tin-plated patterned bus bars

    E-Print Network [OSTI]

    Winiarz, Christine Eve

    2007-01-01

    Bus bars on solar cells shade silicon from light. When the bus bars are patterned, they can reflect light back onto the silicon using total internal reflection. These patterned bus bars are tin plated and produce 1-2.5% ...

  12. Chemical technology news from across RSC Publishing. Printing solar panels

    E-Print Network [OSTI]

    Rogers, John A.

    Publishing Chemical technology news from across RSC Publishing. Printing solar panels 22 January size) silicon microcells that connect together to form flexible solar panels. By stamping hundreds solar panels 2/8/2010http://www.rsc.org/Publishing/ChemTech/Volume/2010/02/printing_solar.asp #12;Page 2

  13. Microstructured surface design for omnidirectional antireflection coatings on solar cells

    E-Print Network [OSTI]

    Zhou, Weidong

    Microstructured surface design for omnidirectional antireflection coatings on solar cells Weidong to current crystalline silicon solar cells, as well as future thin film, quantum dot, and organic solar cells for light collection is vital in achieving high performance solar cells.1 An ideal antireflec- tion AR

  14. Flexible plastic solar cells offer great advantages when compared with

    E-Print Network [OSTI]

    Langendoen, Koen

    Flexible plastic solar cells offer great advantages when compared with traditional silicon solar for a solar cell: extremely easy to produce, very cheap and with good perspectives for high efficiencies. Since ten years considerable progress has been made in developing new and very promising types of solar

  15. Radiative cooling of solar cells LINXIAO ZHU,1

    E-Print Network [OSTI]

    Fan, Shanhui

    Radiative cooling of solar cells LINXIAO ZHU,1 AASWATH RAMAN,2 KEN XINGZE WANG,1 MARC ABOU ANOMA,3. We introduce a general approach to radiatively lower the operating temperature of a solar cell for the radiative cooling of solar cells. For an example case of a bare crystalline silicon solar cell, we show

  16. Purified silicon production system

    DOE Patents [OSTI]

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  17. Signet Solar Inc | Open Energy Information

    Open Energy Info (EERE)

    Alto, California Zip: 94306 Product: US-based manufacturer of amorphous silicon thin-film modules. References: Signet Solar Inc1 This article is a stub. You can help OpenEI by...

  18. Fabrication and Characterization of Organic Solar Cells

    E-Print Network [OSTI]

    Yengel, Emre

    2010-01-01

    in bipolar graphene p-n-p junctions. Phys Rev Lett. 2007;99(GL. A New Silicon P-N Junction Photocell for Convertingmechanisms in organic p/n-junction solar cells. Sol Energ

  19. Engineering metal-impurity nanodefects for low-cost solar cells

    E-Print Network [OSTI]

    LETTERS Engineering metal-impurity nanodefects for low-cost solar cells TONIO BUONASSISI1 to producing cost-effective solar cells. The photovoltaic industry has been growing at a steady annual rate. To eliminate dependence on high-quality silicon feedstock, the development of low-cost `solar-grade silicon

  20. Light trapping in thin-film solar cells with randomly rough and hybrid

    E-Print Network [OSTI]

    Light trapping in thin-film solar cells with randomly rough and hybrid textures Piotr Kowalczewski. M. Smets, and M. Zeman, "Plasmonic light trapping in thin-film silicon solar cells with improved Lambertian limits in thin film silicon solar cells with 1D and 2D periodic patterns," Opt. Express 20, A224­A

  1. Mechanics of thin-film transistors and solar cells on flexible substrates

    E-Print Network [OSTI]

    Suo, Zhigang

    Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova a,*, I be minimized throughout the fab- rication process. Amorphous silicon thin-film transistors and solar cells rights reserved. Keywords: Amorphous silicon; Thin-film transistor; Solar cell; Flexible electronics 1

  2. A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon

    E-Print Network [OSTI]

    in crystalline silicon Chang Sun, Fiacre E. Rougieux, and Daniel Macdonald Citation: Journal of Applied Physics in compensated crystalline silicon for solar cells J. Appl. Phys. 109, 043704 (2011); 10 crystalline silicon Appl. Phys. Lett. 85, 4061 (2004); 10.1063/1.1812833 Deep level of iron-hydrogen complex

  3. Performance Testing using Silicon Devices - Analysis of Accuracy: Preprint

    SciTech Connect (OSTI)

    Sengupta, M.; Gotseff, P.; Myers, D.; Stoffel, T.

    2012-06-01

    Accurately determining PV module performance in the field requires accurate measurements of solar irradiance reaching the PV panel (i.e., Plane-of-Array - POA Irradiance) with known measurement uncertainty. Pyranometers are commonly based on thermopile or silicon photodiode detectors. Silicon detectors, including PV reference cells, are an attractive choice for reasons that include faster time response (10 us) than thermopile detectors (1 s to 5 s), lower cost and maintenance. The main drawback of silicon detectors is their limited spectral response. Therefore, to determine broadband POA solar irradiance, a pyranometer calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under clear-sky conditions with respect to a broadband reference radiometer. The pyranometer is then used for various scenarios including varying airmass, panel orientation and atmospheric conditions. This would not be an issue if all irradiance wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately, the scattering and absorption signature varies widely with wavelength and the calibration factor for the silicon photodiode pyranometer is not appropriate for other conditions. This paper reviews the issues that will arise from the use of silicon detectors for PV performance measurement in the field based on measurements from a group of pyranometers mounted on a 1-axis solar tracker. Also we will present a comparison of simultaneous spectral and broadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.

  4. Advanced silicon photonic modulators

    E-Print Network [OSTI]

    Sorace, Cheryl M

    2010-01-01

    Various electrical and optical schemes used in Mach-Zehnder (MZ) silicon plasma dispersion effect modulators are explored. A rib waveguide reverse biased silicon diode modulator is designed, tested and found to operate at ...

  5. Process for producing silicon

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Carleton, Karen L. (Boulder, CO)

    1984-01-01

    A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  6. Process for producing silicon

    DOE Patents [OSTI]

    Olson, J.M.; Carleton, K.L.

    1982-06-10

    A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  7. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    SciTech Connect (OSTI)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  8. Electrodeposition of molten silicon

    DOE Patents [OSTI]

    De Mattei, Robert C. (Sunnyvale, CA); Elwell, Dennis (Palo Alto, CA); Feigelson, Robert S. (Saratoga, CA)

    1981-01-01

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

  9. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1982-01-01

    A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

  10. Solar collection

    SciTech Connect (OSTI)

    Cole, S.L.

    1984-08-01

    This report contains summaries and pictures of projects funded by the Appropriate Technology Small Grants Program which include the following solar technologies: solar dish; photovoltaics; passive solar building and solar hot water system; Trombe wall; hot air panel; hybrid solar heating system; solar grain dryer; solar greenhouse; solar hot water workshops; and solar workshops.

  11. Fabrication of a luminescent solar concentrator that minimizes self-absorption losses using inter-chromophore energy transfer

    E-Print Network [OSTI]

    Currie, Michael James

    2007-01-01

    The projected need for carbon-free power during this century is immense. Solar power offers the largest resource base to supply this need, but in light of recent silicon shortages, it is an open question whether silicon ...

  12. NREL Core Program (NCPV), Session: Film Silicon (Presentation)

    SciTech Connect (OSTI)

    Branz, H. M.

    2008-04-01

    This project supports the Solar America Initiative by: R and D that contributes to goal of grid parity by 2015; research to fill the industry R and D pipeline for next-generation low-cost scalable products; development of industry collaborative research; and improvement of NREL tools and capabilities for film silicon research. The project addresses both parts of film silicon roadmap: (1) amorphous-silicon-based thin film PV--amorphous and nanocrystalline materials, present '2nd generation' technology, 4% of world PV sales in 2007; (2) advanced R and D toward film crystal silicon--definition, large-grained or single-crystal silicon < 100 {micro}m thick; 3-8 year horizon; and goal of reaching 15% cells at area costs approaching thin films.

  13. Back contact to film silicon on metal for photovoltaic cells

    DOE Patents [OSTI]

    Branz, Howard M.; Teplin, Charles; Stradins, Pauls

    2013-06-18

    A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

  14. Glass-silicon column

    DOE Patents [OSTI]

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  15. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1998-01-01

    A substrate for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3.times.10.sup.-3 ohm-cm.

  16. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    SciTech Connect (OSTI)

    Black, Marcie

    2014-10-31

    This report details some of our studies and proposes future methods of exploring Bandgap Activation.

  17. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, T.F.

    1998-07-28

    A substrate is described for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3{times}10{sup {minus}3} ohm-cm. 4 figs.

  18. Enabling Thin Silicon Solar Cell Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFES ScienceInformation CompanyEmployeeJonHere »Argonne

  19. The Silicon Solar Cell Turns 50

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.Week DayDr. Jeffrey GriffinHydrates |the NewSequence andDaryl

  20. Advances in amorphous silicon photovoltaic technology

    SciTech Connect (OSTI)

    Carlson, D.E.; Rajan, K.; Arya, R.R.; Willing, F.; Yang, L.

    1998-10-01

    With the advent of new multijunction thin film solar cells, amorphous silicon photovoltaic technology is undergoing a commercial revival with about 30 megawatts of annual capacity coming on-line in the next year. These new {ital a}{endash}Si multijunction modules should exhibit stabilized conversion efficiencies on the order of 8{percent}, and efficiencies over 10{percent} may be obtained in the next several years. The improved performance results from the development of amorphous and microcrystalline silicon alloy films with improved optoelectronic properties and from the development of more efficient device structures. Moreover, the manufacturing costs for these multijunction modules using the new large-scale plants should be on the order of {dollar_sign}1 per peak watt. These new modules may find widespread use in solar farms, photovoltaic roofing, as well as in traditional remote applications. {copyright} {ital 1998 Materials Research Society.}

  1. Hexagon solar power panel

    DOE Patents [OSTI]

    Rubin, Irwin (Oxnard, CA)

    1978-01-01

    A solar energy panel comprises a support upon which silicon cells are arrayed. The cells are wafer thin and of two geometrical types, both of the same area and electrical rating, namely hexagon cells and hourglass cells. The hourglass cells are composites of half hexagons. A near perfect nesting relationship of the cells achieves a high density packing whereby optimum energy production per panel area is achieved.

  2. NREL: News - Solar Research Earns Three Prestigious R&D 100 Awards

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    211 Solar Research Earns Three Prestigious R&D 100 Awards June 22, 2011 A technique to turn silicon into ink, a faster way to assess solar cells, and a better furnace for heating...

  3. Approaches To Integrating A HIgh Penertration Of Solar PV and CPV Onto The Electrical Grid

    E-Print Network [OSTI]

    Hill, Steven Craig

    2013-01-01

    focused systems, multi-junction solar cells are needed whichSolar cells to be used in the CPV system can be single junction silicon cells, thin films or multi-

  4. Silicon rich nitride for silicon based laser devices

    E-Print Network [OSTI]

    Yi, Jae Hyung

    2008-01-01

    Silicon based light sources, especially laser devices, are the key components required to achieve a complete integrated silicon photonics system. However, the fundamental physical limitation of the silicon material as light ...

  5. Optical Properties of Crystalline-Amorphous Core-Shell Silicon Nanowires

    E-Print Network [OSTI]

    Anantaram, M. P.

    higher absorption between wave- lengths of 400 and 800 nm compared to thin film amor- phous silicon.12 absorption of down to less than 2% at long wavelengths ( > 780 nm). These results indicate that our nanowires and creat- ing a p-n junction in high efficiency heterojunctions a-Si/ crystalline silicon solar cells.13

  6. Silicon micro-mold

    DOE Patents [OSTI]

    Morales, Alfredo M. (Livermore, CA)

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  7. WORKING QUANTUM EFFICIENCY OF CDTE SOLAR CELL Zimeng Cheng

    E-Print Network [OSTI]

    WORKING QUANTUM EFFICIENCY OF CDTE SOLAR CELL Zimeng Cheng 1 , Kwok Lo 2 , Jingong Pan 1 , Dongguo, the quantum efficiency of CdTe solar cell with various optical biases, which is titled as "Working Quantum Efficiency (WQE)", is measured. The result is compared with industrialized amorphous silicon solar cell

  8. [Type here] Copper Indium Selenide (CIS) Solar Cell

    E-Print Network [OSTI]

    Hochberg, Michael

    [Type here] Copper Indium Selenide (CIS) Solar Cell CIS cells are made with a thin layer of CuInSe2) Solar Cell CIGs cells are made with a thin layer of copper indium gallium diselenide Cu(In, Ga)Se2 (CIGS). CIGS cells have up to 10% efficiency with similar durability as silicon solar cells. Since

  9. INTERNAL QUANTUM EFFICIENCY OF BACK ILLUMINATED n+ pp+ SOLAR CELLS

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    629 INTERNAL QUANTUM EFFICIENCY OF BACK ILLUMINATED n+ pp+ SOLAR CELLS A. LUQUE, J. EGUREN and J+ layer of the back illuminated n+ pp+ solar cells has been carried out, and compared, 1 1. Introduction. - High intensity silicon solar cells, illuminated on the surface opposite

  10. A survey of thin-film solar photovoltaic industry & technologies

    E-Print Network [OSTI]

    Grama, Sorin

    2007-01-01

    A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

  11. Simulations of solar cell absorption enhancement using resonant modes

    E-Print Network [OSTI]

    Grandidier, Jonathan

    for enhancing the absorption of thin-film amorphous silicon solar cells using periodic arrangements of resonant,7 Dielectric nanospheres are promising structures for light trapping in planar, thin-film solar cells. It has a thin-film a-Si solar cell structure featuring back reflector and optimized anti-reflection coating. We

  12. Front contact solar cell with formed emitter

    SciTech Connect (OSTI)

    Cousins, Peter John

    2014-11-04

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  13. Front contact solar cell with formed emitter

    DOE Patents [OSTI]

    Cousins, Peter John (Menlo Park, CA)

    2012-07-17

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  14. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, Robert A. (Albuquerque, NM); Seager, Carleton H. (Albuquerque, NM)

    1996-01-01

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  15. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, R.A.; Seager, C.H.

    1996-12-10

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  16. Method for cleaning a solar cell surface opening made with a solar etch paste

    DOE Patents [OSTI]

    Rohatgi, Ajeet; Meemongkolkiat, Vichai

    2010-06-22

    A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

  17. Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers

    SciTech Connect (OSTI)

    Myers, D. R.

    2011-01-01

    Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

  18. Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers: Preprint

    SciTech Connect (OSTI)

    Myers, D. R.

    2011-04-01

    Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

  19. ENI Renewable and Non-conventional Energy Prize 2012 High-efficiency solar cells based on nanophotonic design

    E-Print Network [OSTI]

    Polman, Albert

    demonstrated ultra-thin silicon solar cells on glass, world-record efficiency thin-film GaAs solar cells to solar cell design are applicable to other solar cell technologies as well, including thin-film CuInSe2ENI Renewable and Non-conventional Energy Prize 2012 High-efficiency solar cells based

  20. Measuring Speedy Electrons in Silicon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser, Supercomputer Measure Speedy Electrons in Silicon Laser, Supercomputer Measure Speedy Electrons in Silicon Simulations at NERSC Help Illuminate Attosecond Laser Experiment...

  1. NATURE NANOTECHNOLOGY | VOL 9 | JANUARY 2014 | www.nature.com/naturenanotechnology 19 rystalline silicon (c-Si) is the most important semiconduc-

    E-Print Network [OSTI]

    applications. As a result, around 90% of solar panels in use today are based on silicon. The optical properties decades, which is truly remarkable and which has driven the development of silicon technology to its present maturity. Together with its 1.1-eV bandgap -- optimal for capturing the solar spectrum using

  2. Silicone-containing composition

    DOE Patents [OSTI]

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  3. Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell

    E-Print Network [OSTI]

    Grandidier, Jonathan

    Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell J. Grandidier photocurrent of the solar cell. On a typical thin film amorphous silicon solar cell, a parametric analysis of SiO2 spheres directly placed on top of a-Si [1] and gallium arsenide (GaAs) [3] solar cells. We

  4. Microstructured anti-reflection surface design for the omni-directional solar cells

    E-Print Network [OSTI]

    Zhou, Weidong

    Microstructured anti-reflection surface design for the omni-directional solar cells Li Chen for the formation of hemispherical structures as an omni-directional anti-reflection (omni-AR) coating in solar cell current in such hemispherical solar cells hence enhanced to 1.5 times of bulk silicon solar cells

  5. Dielectric back scattering patterns for light trapping in thin-film Si solar cells

    E-Print Network [OSTI]

    Polman, Albert

    Dielectric back scattering patterns for light trapping in thin-film Si solar cells M. van Lare,1 of dielectric and metallic backscattering patterns in thin-film a-Si:H solar cells. We compare devices for Light Trapping in Thin-Film Silicon Solar Cells", in Proceedings of the 23rd European Photovoltaic Solar

  6. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  7. Metasurface Broadband Solar Absorber

    E-Print Network [OSTI]

    Azad, A K; Sykora, M; Weisse-Bernstein, N R; Luk, T S; Taylor, A J; Dalvit, D A R; Chen, H -T

    2015-01-01

    We demonstrate a broadband, polarization independent, omnidirectional absorber based on a metallic metasurface architecture, which accomplishes greater than 90% absorptance in the visible and near-infrared range of the solar spectrum, and exhibits low emissivity at mid- and far-infrared wavelengths. The complex unit cell of the metasurface solar absorber consists of eight pairs of gold nano-resonators that are separated from a gold ground plane by a thin silicon dioxide spacer. Our experimental measurements reveal high-performance absorption over a wide range of incidence angles for both s- and p-polarizations. We also investigate numerically the frequency-dependent field and current distributions to elucidate how the absorption occurs within the metasurface structure. Furthermore, we discuss the potential use of our metasurface absorber design in solar thermophotovoltaics by exploiting refractory plasmonic materials.

  8. Breakout Session: Looking Forward: The Solar Market in 2040

    Broader source: Energy.gov [DOE]

    Join us to envision what solar technologies will compose the marketplace in 25 years. Will silicon PV still dominate, or will other technologies become more prominent? How much differentiation by...

  9. Amorphous silicon waveguides for microphotonics M. J. A. de Dooda)

    E-Print Network [OSTI]

    Polman, Albert

    ­4 MeV energy range. Thermal relaxation of the amorphous network at 500 °C for 1 h leads to an amorphous electrical quality, and relatively low optical absorption.6 Amorphous silicon has already received a lot of interest both from a fundamental point of view and because of its possible use in solar cells

  10. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  11. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  12. Nanoparticle-based etching of silicon surfaces

    DOE Patents [OSTI]

    Branz, Howard (Boulder, CO); Duda, Anna (Denver, CO); Ginley, David S. (Evergreen, CO); Yost, Vernon (Littleton, CO); Meier, Daniel (Atlanta, GA); Ward, James S. (Golden, CO)

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  13. Hybrid silicon evanescent approach to optical interconnects

    E-Print Network [OSTI]

    2009-01-01

    Big Island, HI, USA, 2006 Hybrid silicon evanescent approach10.1007/s00339-009-5118-1 Hybrid silicon evanescent approachthe recently developed hybrid silicon evanescent platform (

  14. III-V Growth on Silicon Toward a Multijunction Cell

    SciTech Connect (OSTI)

    Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

    2005-11-01

    A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

  15. Light-induced water oxidation at silicon electrodes functionalized with a cobalt oxygen-evolving catalyst

    E-Print Network [OSTI]

    Pijpers, Joep J. H.

    Integrating a silicon solar cell with a recently developed cobalt-based water-splitting catalyst (Co-Pi) yields a robust, monolithic, photo-assisted anode for the solar fuels process of water splitting to O2 at neutral pH. ...

  16. Crystalline Silicon Photovoltaics Research

    Broader source: Energy.gov [DOE]

    DOE supports crystalline silicon photovoltaic (PV) research and development efforts that lead to market-ready technologies. Below are a list of the projects, summary of the benefits, and discussion...

  17. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal produced in the United States in 2012

    E-Print Network [OSTI]

    and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips%; and other, 5%. Silicon metal: Brazil, 41%; South Africa, 20%; Canada, 12%; Australia, 9%; and other, 18 materials source for aluminum-silicon alloys--was projected to increase by 10% in 2012 compared

  18. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal produced in the United States in 2011

    E-Print Network [OSTI]

    and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips%; and other, 4%. Silicon metal: Brazil, 39%; South Africa, 22%; Canada, 13%; Australia, 10%; and other, 16 secondary aluminum production--the primary materials source for aluminum-silicon alloys--was projected

  19. Enhancement of specific heat capacity of high-temperature silica-nanofluids synthesized in alkali chloride salt eutectics for solar thermal-energy

    E-Print Network [OSTI]

    Banerjee, Debjyoti

    chloride salt eutectics for solar thermal-energy storage applications Donghyun Shin, Debjyoti Banerjee December 2010 Keywords: Nanoparticle Specific heat capacity Alkali chloride eutectic Silicon dioxide

  20. OXIDE / LPCVD NITRIDE STACKS ON SILICON: THE EFFECTS OF HIGH TEMPERATURE TREATMENTS ON BULK LIFETIME AND ON SURFACE PASSIVATION.

    E-Print Network [OSTI]

    for Sustainable Energy Systems, Engineering Department, The Australian National University, Acton 0200, Australia. ABSTRACT: Silicon dioxide / silicon nitride stacks are potentially useful for solar cell applications due significantly increased process flexibility and hence the realisation of novel cell structures. We used LPCVD

  1. Fabrication and properties of microporous silicon 

    E-Print Network [OSTI]

    Shao, Jianzhong

    1994-01-01

    structure as the wafer from which it was fabricated. Oxidization at 800'C converts the porous silicon totally to amorphous silicon dioxide. Oxidation at 600'C produces a mixture of crystalline silicon and amorphous silicon dioxide. The pore structure...

  2. 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Sept. 2009 HIGLY PREDICTIVE MODELLING OF ENTIRE SI SOLAR CELLS FOR INDUSTRIAL APPLICATIONS

    E-Print Network [OSTI]

    24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Sept. 2009 1 HIGLY PREDICTIVE Czochralski (Cz) silicon solar cells are assessed by means of highly predictive numerical modelling in two have simulations of industrial Si solar cells become highly predictive. Like in the analysis

  3. A solar module fabrication process for HALE solar electric UAVs

    SciTech Connect (OSTI)

    Carey, P.G.; Aceves, R.C.; Colella, N.J.; Williams, K.A.; Sinton, R.A.; Glenn, G.S.

    1994-12-12

    We describe a fabrication process used to manufacture high power-to-weight-ratio flexible solar array modules for use on high-altitude-long-endurance (HALE) solar-electric unmanned air vehicles (UAVs). These modules have achieved power-to-weight ratios of 315 and 396 W/kg for 150{mu}m-thick monofacial and 110{mu}m-thick bifacial silicon solar cells, respectively. These calculations reflect average module efficiencies of 15.3% (150{mu}m) and 14.7% (110{mu}m) obtained from electrical tests performed by Spectrolab, Inc. under AMO global conditions at 25{degrees}C, and include weight contributions from all module components (solar cells, lamination material, bypass diodes, interconnect wires, and adhesive tape used to attach the modules to the wing). The fabrication, testing, and performance of 32 m{sup 2} of these modules will be described.

  4. Si3AlP: A New Promising Material for Solar Cell Absorber Ji-Hui Yang,

    E-Print Network [OSTI]

    Gong, Xingao

    the existing solar cell technologies, first-generation crystalline silicon-based solar cells are still one such as tandem solar cells. However, only a few of these alloys have been studied and applied in practice. OneSi3AlP: A New Promising Material for Solar Cell Absorber Ji-Hui Yang, Yingteng Zhai, Hengrui Liu

  5. Toward High-Performance Organic-Inorganic Hybrid Solar Cells: Bringing Conjugated Polymers and Inorganic Nanocrystals in Close

    E-Print Network [OSTI]

    Lin, Zhiqun

    to traditional silicon solar cells due to the capacity of producing high- efficiency solar energy in a cost of nanostructured high-performance, lightweight, flexible, large-area, and low- cost hybrid solar cells. HoweverToward High-Performance Organic-Inorganic Hybrid Solar Cells: Bringing Conjugated Polymers

  6. Silicon nanopatterning for device applications

    E-Print Network [OSTI]

    Oh, Young

    2012-01-01

    telecom and photovoltaic (PV) solar cells. With the rapidlydimensional array of photovoltaic solar cells using non-such as photonic, photovoltaic, solar cells, capacitors,

  7. Floating Silicon Method

    SciTech Connect (OSTI)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  8. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, John W. (Albuquerque, NM)

    1994-01-01

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  9. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, J.W.

    1994-01-11

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  10. Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell

    E-Print Network [OSTI]

    Li, Tong; Jiang, Chun

    2010-01-01

    We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

  11. Method of forming contacts for a back-contact solar cell

    DOE Patents [OSTI]

    Manning, Jane

    2015-10-20

    Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

  12. Method of forming contacts for a back-contact solar cell

    DOE Patents [OSTI]

    Manning, Jane

    2014-07-15

    Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

  13. Community Shared Solar with Solarize

    Office of Energy Efficiency and Renewable Energy (EERE)

    An overview of the concept behind The Solarize Guidebook, which offers neighborhoods a plan for getting volume discounts when making group purchases of rooftop solar energy systems.

  14. Award-Winning Etching Process Cuts Solar Cell Costs (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-08-01

    NREL scientists have invented the 'black silicon' nanocatalytic wet-chemical etch, an inexpensive, one-step process that literally turns the solar cells black, allowing them to absorb more than 98% of incident sunlight. The process costs just a few cents per watt of solar-cell power-producing capacity. Increases in manufactured cell efficiencies of up to 0.8% are possible because of the reduced reflectance of black silicon. This would reduce silicon solar module costs by $5-$10 per module.

  15. Solar Thermal Powered Evaporators

    E-Print Network [OSTI]

    Moe, Christian Robert

    2015-01-01

    Solar Thermal Collectors .is solar energy. Solar thermal collector arrays can be usedon integrating solar thermal collectors with desalination

  16. Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach H. J. Xiang,1,2,* Bing Huang,2

    E-Print Network [OSTI]

    Gong, Xingao

    silicon (Si) is the leading material in the current solar cell market. However, diamond Si is an indirect phase with quasidirect gaps of 1.55 eV, which is a promising candidate for making thin-film solar cells is the leading material of microelectronic devices. Currently, the majority of solar cells fabricated to date

  17. Method of restoring degraded solar cells

    DOE Patents [OSTI]

    Staebler, David L. (Lawrenceville, NJ)

    1983-01-01

    Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

  18. Method of restoring degraded solar cells

    DOE Patents [OSTI]

    Staebler, D.L.

    1983-02-01

    Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200 C for at least 30 minutes restores their efficiency. 2 figs.

  19. Dual gratings for enhanced light trapping in thin-film solar cells

    E-Print Network [OSTI]

    Dual gratings for enhanced light trapping in thin-film solar cells by a layer-transfer technique, Ireland * christian.schuster@york.ac.uk Abstract: Thin film solar cells benefit significantly from, "Progress and outlook for high-efficiency crystalline silicon solar cells," Sol. Energy Mater. Sol. Cells 65

  20. UHF Solar Powered Active Oscillator Antenna on Low Cost Flexible Substrate for Wireless Identification Applications

    E-Print Network [OSTI]

    Tentzeris, Manos

    UHF Solar Powered Active Oscillator Antenna on Low Cost Flexible Substrate for Wireless antenna using low cost flexible substrate materials is presented. Flexible amorphous silicon a-Si solar nature of the circuit and providing operational autonomy by harvesting solar power without affecting

  1. Photon-Electron Harvesting in Thin-Film Flexible Solar Cells

    E-Print Network [OSTI]

    Wu, Shin-Tson

    ) Dr. Debashis Chanda's Group Cost effective and high efficiency solar cells are important in orderPhoton-Electron Harvesting in Thin-Film Flexible Solar Cells Javaneh Boroumand (12:00 PM ­ 12:30 PM-crystalline silicon (c- Si) remained number one material of choice for harnessing solar energy due to natural

  2. Computational Modeling of Plasmon-Enhanced Light Absorption in a Multicomponent Dye Sensitized Solar Cell

    E-Print Network [OSTI]

    commercially available solar cell panels are made of monocrystalline silicon doped with toxic heavy metals Solar Cell Hanning Chen, Martin G. Blaber, Stacey D. Standridge, Erica J. DeMarco, Joseph T. Hupp, Mark A. Ratner, and George C. Schatz* Argonne-Northwestern Solar Energy Research Center Department

  3. Tarn Yates, Senior Thesis, Physics Department UCSC Summer 2003 Solar Cells in Concentrating Systems

    E-Print Network [OSTI]

    Drop in Crystalline Silicon Solar Cells. 20 iii. Temperature Dependence of the Spectral and Efficiency. This is because the cost of solar panels compared to the amount of power they produce makes their purchaseTarn Yates, Senior Thesis, Physics Department UCSC Summer 2003 Solar Cells in Concentrating Systems

  4. Engineering Gaussian disorder at rough interfaces for light trapping in thin-film solar cells

    E-Print Network [OSTI]

    Engineering Gaussian disorder at rough interfaces for light trapping in thin-film solar cells Piotr A theoretical study of randomly rough interfaces to obtain light trapping in thin-film silicon solar cells of thin-film solar cells. © 2012 Optical Society of America OCIS codes: 040.5350, 050.1950. Reducing

  5. Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array

    E-Print Network [OSTI]

    Grandidier, Jonathan

    an approach for enhancing the absorption of thin-film amorphous silicon solar cells using periodic for light trapping in planar thin-film solar cells. It has recently been shown that freely propagating finite difference time domain (FDTD) simulations of a nanosphere array above a thin-film a-Si solar cell

  6. Fabrication of porous silicon membranes 

    E-Print Network [OSTI]

    Yue, Wing Kong

    1988-01-01

    . Porous silicon layer is formed by the local dissolution which is initiated by the surface layer and is promoted by the hindrance layers composed of the silicic acid. Local etching or local dissolution is the cause of forming porous structure... of pores were 25 to 45 A with a mean value of 38 A. Microstructure of porous silicon studied by Besle et al. showed two distinct 17 patterns: the structure pattern of porous silicon film on heavily doped silicon and that on slightly doped silicon [26...

  7. Material and Energy Flows Associated with Select Metals in GREET 2. Molybdenum, Platinum, Zinc, Nickel, Silicon

    SciTech Connect (OSTI)

    Benavides, Pahola T.; Dai, Qiang; Sullivan, John L.; Kelly, Jarod C.; Dunn, Jennifer B.

    2015-09-01

    In this work, we analyzed the material and energy consumption from mining to production of molybdenum, platinum, zinc, and nickel. We also analyzed the production of solar- and semiconductor-grade silicon. We described new additions to and expansions of the data in GREET 2. In some cases, we used operating permits and sustainability reports to estimate the material and energy flows for molybdenum, platinum, and nickel, while for zinc and silicon we relied on information provided in the literature.

  8. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  9. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

    DOE Patents [OSTI]

    Pankove, J.I.; Wu, C.P.

    1982-03-30

    A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.

  10. CALIFORNIA SOLAR DATA MANUAL

    E-Print Network [OSTI]

    Berdahl, P.

    2010-01-01

    Estimating Unmeasured Solar Radiation Quantities . . . . . .Solar Data a. SOLAR RADIATION Solar radiation data provide aAppendix C - Appendix 0 - Solar Radiation Glossary. Convers

  11. Silicon Nanowire Array Photoelectrochemical Cells Adrian P. Goodey, Sarah M. Eichfeld, Kok-Keong Lew, Joan M. Redwing,*, and

    E-Print Network [OSTI]

    -Keong Lew, Joan M. Redwing,*, and Thomas E. Mallouk*, Departments of Chemistry and Materials Science,9 For these reasons, semiconductor nanoarchitectures have been increasingly studied for their potential solar energy been reported. To date, however, the only reported solar energy application of silicon nanowire (Si

  12. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01

    cells. Solar Energy Materials and Solar Cells, 90:3001–3008,solar cells. Solar Energy Materials and Solar Cells, 68:227–trends. Solar Energy Materials and Solar Cells, 38:501–520,

  13. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1980-01-01

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  14. An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires

    E-Print Network [OSTI]

    Nasipuri, Asis

    on inorganic or organic materials, such as silicon-based thin film solar cells,2 multi-junction solar cells,3 architecture. 1. Introduction Solar cells have been a subject of great interest due to the growing awareness and dye-sensitized solar cells (DSSCs).4 Nevertheless, most of them suffer from either high cost

  15. Available online at www.sciencedirect.com * Corresponding author. Tel.: +49-511-762-17253 ; E-mail address: steingrube@solar.uni-hannover.de.

    E-Print Network [OSTI]

    and improvements of industrially fabricated Cz-Si solar cells by means of process and device simulations S the improvement of actual solar cells. We investigate a standard screen-printed industrial type solar cell-doped Cz silicon solar cells using a combination of process and device simulations. The model reproduces

  16. Multicolored Vertical Silicon Nanowires

    SciTech Connect (OSTI)

    Seo, Kwanyong; Wober, Munib; Steinvurzel, P.; Schonbrun, E.; Dan, Yaping; Ellenbogen, T.; Crozier, K. B.

    2011-04-13

    We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental data to the results of finite difference time domain simulations to elucidate the physical mechanisms behind the phenomena we observe. The nanowires are fabricated as arrays, but the vivid colors arise not from scattering or diffractive effects of the array, but from the guided mode properties of the individual nanowires. Each nanowire can thus define its own color, allowing for complex spatial patterning. We anticipate that the color filter effect we demonstrate could be employed in nanoscale image sensor devices.

  17. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  18. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  19. Making silicon stronger.

    SciTech Connect (OSTI)

    Boyce, Brad Lee

    2010-11-01

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

  20. A silicon electromechanical photodetector

    E-Print Network [OSTI]

    Tallur, Siddharth

    2013-01-01

    Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon micro-resonator, which converts near-IR optical intensity modulation at 174.2MHz and 1.198GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors.

  1. Integrated photonic structures for light trapping in thin-film Si solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

  2. Investigation of the Role of Trap States in Solar Cell Reliability using Photothermal Deflection Spectroscopy

    E-Print Network [OSTI]

    Bezryadina, Anna Sergeyevna

    2012-01-01

    if moderate efficiency (10%) solar panels were used just forsolar cells and panels. A chart of the record efficienciessolar panel technology today is single crystal silicon (c-Si), since it can achieve relatively high device efficiencies,

  3. Stretchable silicon could be next wave in electronics http://www.physorg.com/news9110.html 1 of 3 12/21/2005 6:04 PM

    E-Print Network [OSTI]

    Rogers, John A.

    » Scratches no match for Nissan's new car paint » Interstellar Spaceflight: Is It Possible? » On-line gamer dirty silicon, could pave way for cheaper solar energy , August 16, 2005 » A new spin on silicon dies » Japan hopes to predict 'Big One' with journey to center of Earth » New Israeli mobile phone

  4. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  5. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  6. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  7. Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

    DOE Patents [OSTI]

    Weber, Michael F. (St. Paul, MN)

    1991-10-08

    A method for preventing shorts and shunts in solar cells having in order, an insulating substrate, a conductive metal layer on the substrate, an amorphous silicon layer and a transparent conductive layer. The method includes anodic etching of exposed portions of the metal layer after deposition of the amorphous silicon and prior to depositing the transparent conductive layer.

  8. Has sempra found El Dorado in solar PVs? grid parity may now be within reach

    SciTech Connect (OSTI)

    2009-03-15

    Instead of using conventional polycrystalline silicon modules that turn sunlight into electricity, these solar panels use cadmium telluride, a lower-cost semiconductor manufactured into thin-film cells that are cheaper to manufacture than their silicon-based counterparts. Electricity is being produced at costs as low as 7.5 {cents}/kWh.

  9. Decentalized solar photovoltaic energy systems

    SciTech Connect (OSTI)

    Krupka, M. C.

    1980-09-01

    Environmental data for decentralized solar photovoltaic systems have been generated in support of the Technology Assessment of Solar Energy Systems program (TASE). Emphasis has been placed upon the selection and use of a model residential photovoltaic system to develop and quantify the necessary data. The model consists of a reference home located in Phoenix, AZ, utilizing a unique solar cell array-roof shingle combination. Silicon solar cells, rated at 13.5% efficiency at 28/sup 0/C and 100 mW/cm/sup 2/ (AMI) insolation are used to generate approx. 10 kW (peak). An all-electric home is considered with lead-acid battery storage, dc-ac inversion and utility backup. The reference home is compared to others in regions of different insolation. Major material requirements, scaled to quad levels of end-use energy include significant quantities of silicon, copper, lead, antimony, sulfuric acid and plastics. Operating residuals generated are negligible with the exception of those from the storage battery due to a short (10-year) lifetime. A brief general discussion of other environmental, health, and safety and resource availability impacts is presented. It is suggested that solar cell materials production and fabrication may have the major environmental impact when comparing all facets of photovoltaic system usage. Fabrication of the various types of solar cell systems involves the need, handling, and transportation of many toxic and hazardous chemicals with attendant health and safety impacts. Increases in production of such materials as lead, antimony, sulfuric acid, copper, plastics, cadmium and gallium will be required should large scale usage of photovoltaic systems be implemented.

  10. Solar Forecasting

    Broader source: Energy.gov [DOE]

    On December 7, 2012, DOE announced $8 million to fund two solar projects that are helping utilities and grid operators better forecast when, where, and how much solar power will be produced at U.S....

  11. Solar Rights

    Broader source: Energy.gov [DOE]

    A solar energy system is defined as "a system affixed to a building or buildings that uses solar devices, which are thermally isolated from living space or any other area where the energy is used...

  12. Solar Rights

    Broader source: Energy.gov [DOE]

    In the context of this law, a solar energy device is a system "manufactured and sold for the sole purpose of facilitating the collection and beneficial use of solar energy, including passive...

  13. Solar collectors

    SciTech Connect (OSTI)

    Cassidy, V.M.

    1981-11-01

    Practical applications of solar energy in commercial, industrial and institutional buildings are considered. Two main types of solar collectors are described: flat plate collectors and concentrating collectors. Efficiency of air and hydronic collectors among the flat plate types are compared. Also several concentrators are described, including their sun tracking mechanisms. Descriptions of some recent solar installations are presented and a list representing the cross section of solar collector manufacturers is furnished.

  14. Vertical silicon nanowire arrays for gas sensing

    E-Print Network [OSTI]

    Zhao, Hangbo

    2014-01-01

    The goal of this research was to fabricate and characterize vertically aligned silicon nanowire gas sensors. Silicon nanowires are very attractive for gas sensing applications and vertically aligned silicon nanowires are ...

  15. Exploratory Research for New Solar Electric Technologies

    SciTech Connect (OSTI)

    McConnell, R.; Matson, R.

    2005-01-01

    We will review highlights of exploratory research for new PV technologies funded by the DOE Solar Energy Technologies Program through NREL and its Photovoltaic Exploratory Research Project. The goal for this effort is highlighted in the beginning of the Solar Program Multi-Year Technical Plan by Secretary of Energy Spencer Abraham's challenge to leapfrog the status quo by pursuing research having the potential to create breakthroughs. The ultimate goal is to create solar electric technologies for achieving electricity costs below 5 cents/kWh. Exploratory research includes work on advanced photovoltaic technologies (organic and ultra-high efficiency solar cells for solar concentrators) as well as innovative approaches to emerging and mature technologies (e.g., crystalline silicon).

  16. Reducing the Cost of Solar Cells

    SciTech Connect (OSTI)

    Scanlon, B.

    2012-04-01

    Solar-powered electricity prices could soon approach those of power from coal or natural gas thanks to collaborative research with solar startup Ampulse Corporation at the National Renewable Energy Laboratory. Silicon wafers account for almost half the cost of today's solar photovoltaic panels, so reducing or eliminating wafer costs is essential to bringing prices down. Current crystalline silicon technology converts energy in a highly efficient manner; however, that technology is manufactured with processes that could stand some improvement. The industry needs a method that is less complex, creates less waste and uses less energy. First, half the refined silicon is lost as dust in the wafer-sawing process, driving module costs higher. Wafers are sawn off of large cylindrical ingots, or boules, of silicon. A typical 2-meter boule loses as many as 6,000 potential wafers during sawing. Second, the wafers produced are much thicker than necessary. To efficiently convert sunlight into electricity, the wafers need be only one-tenth the typical thickness. NREL, the Oak Ridge National Laboratory and Ampulse have partnered on an approach to eliminate this waste and dramatically lower the cost of the finished solar panels. By using a chemical vapor deposition process to grow the silicon on inexpensive foil, Ampulse is able to make the solar cells just thick enough to convert most of the solar energy into electricity. No more sawdust - and no more wasting refined silicon materials. NREL developed the technology to grow high-quality silicon and ORNL developed the metal foil that has the correct crystal structure to support that growth. Ampulse is installing a pilot manufacturing line in NREL's Process Development Integration Laboratory, where solar companies can work closely with lab scientists on integrated equipment to answer pressing questions related to their technology development, as well as rapidly overcoming R and D challenges and risk. NREL's program is focused on transformative innovation in the domestic PV industry. With knowledge and expertise acquired from the PDIL pilot production line tools, Ampulse plans to design a full-scale production line to accommodate long rolls of metal foil. The Ampulse process 'goes straight from pure silicon-containing gas to high-quality crystal silicon film,' said Brent Nelson, the operational manager for the Process Development Integration Laboratory. 'The advantage is you can make the wafer just as thin as you need it - 10 microns or less.' Most of today's solar cells are made out of wafer crystalline silicon, though thin-film cells made of more exotic elements such as copper, indium, gallium, arsenic, cadmium, tellurium and others are making a strong push into the market. The advantage of silicon is its abundance, because it is derived from sand. Silicon's disadvantage is that purifying it into wafers suitable for solar cells can be expensive and energy intensive. Manufacturers add carbon and heat to sand to produce metallurgical-grade silicon, which is useful in other industries, but not yet suitable for making solar cells. So this metallurgical-grade silicon is then converted to pure trichlorosilane (SiCl3) or silane (SiH4) gas. Typically, the purified gas is then converted to create a silicon feedstock at 1,000 degrees Celsius. This feedstock is melted at 1,414 C and recrystallized into crystal ingots that are finally sawed into wafers. The Ampulse method differs in that it eliminates the last two steps in the traditional process and works directly with the silane gas growing only the needed silicon right onto a foil substrate. A team of NREL scientists had developed a way to use a process called hot-wire chemical vapor deposition to thicken silicon wafers with near perfect crystal structure. Using a hot tungsten filament much like the one found in an incandescent light bulb, the silane gas molecules are broken apart and deposited onto the wafer using the chemical vapor deposition technique at about 700 C - a much lower temperature than needed to make the wafer. The hot filament dec

  17. Adhesion Impact of Silicone Contamination during Encapsulation...

    Office of Scientific and Technical Information (OSTI)

    Adhesion Impact of Silicone Contamination during Encapsulation. Citation Details In-Document Search Title: Adhesion Impact of Silicone Contamination during Encapsulation. Abstract...

  18. Solar Physics A Journal for Solar and Solar-Stellar

    E-Print Network [OSTI]

    Padmanabhan, Janardhan

    investigated in the build-up to one of the deepest solar minima expe- rienced in the past 100 years1 23 Solar Physics A Journal for Solar and Solar-Stellar Research and the Study of Solar-013-0335-3 Changes in Quasi-periodic Variations of Solar Photospheric Fields: Precursor to the Deep Solar Minimum

  19. FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE and X. Deng1,2

    E-Print Network [OSTI]

    Deng, Xunming

    FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE SUBSTRATES A. Vijh1,2 , X. Yang1 , W of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous), and the effect of tie coats on film adhesion. INTRODUCTION Amorphous silicon (a-Si) based solar cells

  20. Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a

    E-Print Network [OSTI]

    Alam, Muhammad A.

    Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues