National Library of Energy BETA

Sample records for molecular beam epitaxial

  1. Method of deposition by molecular beam epitaxy

    DOE Patents [OSTI]

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  2. Method of deposition by molecular beam epitaxy

    DOE Patents [OSTI]

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  3. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    SciTech Connect (OSTI)

    Zhang, Zhi; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Lu, Zhen-Yu; Chen, Ping-Ping; Shi, Sui-Xing; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-08-12

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  4. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    A. T. Bollinger; Wu, J.; Bozovic, I.

    2016-03-15

    In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  5. ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable

    Office of Scientific and Technical Information (OSTI)

    layered hexagonal phase (Journal Article) | SciTech Connect ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase Citation Details In-Document Search Title: ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase Alloy formation in ScGaN is explored using rf molecular beam epitaxy over the Sc fraction range x=0-100%. Optical and structural analysis show separate regimes of growth, namely (I) wurtzitelike but

  6. Publisher's Note: ScGaN alloy growth by molecular beam epitaxy: Evidence

    Office of Scientific and Technical Information (OSTI)

    for a metastable layered hexagonal phase [Phys. Rev. B 70, 193309 (2004)] (Journal Article) | SciTech Connect Publisher's Note: ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase [Phys. Rev. B 70, 193309 (2004)] Citation Details In-Document Search Title: Publisher's Note: ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase [Phys. Rev. B 70, 193309 (2004)] No abstract prepared. Authors: Constantin, Costel

  7. Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy

    SciTech Connect (OSTI)

    Li, C.; Zeng, Z. Q.; Hirono, Y.; Morgan, T. A.; Hu, X.; Salamo, G. J.; Fan, D. S.; Wu, J.; Yu, S. Q.; Wang, Zh. M.

    2011-12-12

    Self-assembly of bismuth droplets at nanoscale on GaAs(100) surface using molecular beam epitaxy was demonstrated. Fine control of density and size was achieved by varying growth temperature and total bismuth deposition. Droplet density was tuned by roughly 3 orders of magnitude, and the density-temperature dependence was found to be consistent with classical nucleation theory. These results may extend the flexibility of droplet epitaxy by serving as templates for group V based droplet epitaxy, which is in contrast to conventional group III based droplet epitaxy and may encourage nanostructure formation of bismuth-containing materials.

  8. Fabrication of precision high quality facets on molecular beam epitaxy material

    DOE Patents [OSTI]

    Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

    2001-01-01

    Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

  9. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    SciTech Connect (OSTI)

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-02-09

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

  10. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOE Patents [OSTI]

    Brennan, T.M.; Hammons, B.E.; Tsao, J.Y.

    1992-12-15

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.

  11. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOE Patents [OSTI]

    Brennan, Thomas M.; Hammons, B. Eugene; Tsao, Jeffrey Y.

    1992-01-01

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

  12. High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

    SciTech Connect (OSTI)

    Maeda, Y.; Yamada, S.; Ando, Y.; Yamane, K.; Miyao, M.; Hamaya, K.

    2010-11-08

    We demonstrate atomically controlled heterojunctions consisting of ferromagnetic CoFe alloys and silicon (Si) using low-temperature molecular beam epitaxy with a good atomic matching at the (111) plane. The saturation magnetization of the CoFe layers grown reaches {approx}85% of the value of bulk samples reported so far, and can be systematically controlled by tuning the ratio of Co to Fe, indicating that the silicidation reactions between CoFe and Si are suppressed and the heterojunctions are very high quality. We find that the Schottky barrier height of the high-quality CoFe/Si(111) junctions is unexpectedly low compared to the previous data for other metal/Si ones, implying the reduction in the Fermi-level-pinning effect. We can expand the available high-quality ferromagnet/Si heterostructures in the field of Si-based spintronics.

  13. Molecular beam epitaxy growth of SnO{sub 2} using a tin chemical precursor

    SciTech Connect (OSTI)

    Wang, Tianqi; Prakash, Abhinav; Jalan, Bharat; Warner, Ellis; Gladfelter, Wayne L.

    2015-03-15

    The authors report on the development of a molecular beam epitaxy approach for atomic layer controlled growth of phase-pure, single-crystalline epitaxial SnO{sub 2} films with scalable growth rates using a highly volatile precursor (tetraethyltin) for tin and rf-oxygen plasma for oxygen. Smooth, epitaxial SnO{sub 2} (101) films on r-sapphire (101{sup ¯}2) substrates were grown as a function of tin precursor flux and substrate temperatures between 300 and 900 °C. Three distinct growth regimes were identified where SnO{sub 2} films grew in a reaction-, flux-, and desorption-limited mode, respectively, with increasing substrate temperature. In particular, with increasing tin flux, the growth rates were found to increase and then saturate indicating any excess tin precursor desorbs above a critical beam equivalent pressure of tin precursor. Important implications of growth kinetic behaviors on the self-regulating stoichiometric growth of perovskite stannates are discussed.

  14. Growth of atomically smooth MgO films on graphene by molecular beam epitaxy

    SciTech Connect (OSTI)

    Wang, W. H.; Han, W.; Pi, K.; McCreary, K. M.; Miao, F.; Bao, W.; Lau, C. N.; Kawakami, R. K.

    2008-11-03

    We investigate the growth of MgO films on graphene by molecular beam epitaxy and find that surface diffusion promotes a rough morphology. To reduce the mobility of surface atoms, the graphene surface is dressed by Ti atoms prior to MgO deposition. With as little as 0.5 ML (monolayer) of Ti, the MgO overlayer becomes atomically smooth. Furthermore, no aggregation of MgO is observed at the edges of the graphene sheet. These results are important for the fabrication of nanoscale electronic and spintronic devices.

  15. An ultra-compact, high-throughput molecular beam epitaxy growth system

    SciTech Connect (OSTI)

    Baker, A. A.; Hesjedal, T.; Braun, W. E-mail: fischer@createc.de; Rembold, S.; Fischer, A. E-mail: fischer@createc.de; Gassler, G.

    2015-04-15

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)

  16. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Werner, R.; Kleiner, R.; Koelle, D.; Petrov, A. Yu.; Davidson, B. A.; Mino, L. Alvarez

    2011-04-18

    We report resistance versus magnetic field measurements for a La{sub 0.65}Sr{sub 0.35}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.65}Sr{sub 0.35}MnO{sub 3} tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches {approx}1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

  17. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  18. Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

    SciTech Connect (OSTI)

    Andrieu, S. Bonell, F.; Hauet, T.; Montaigne, F.; Lefevre, P.; Bertran, F.

    2014-05-07

    The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe{sub 1−x}V{sub x} electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe{sub 1−X}Co{sub x}/MgO/Fe{sub 1−X}Co{sub x} (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty Δ1 minority spin state towards the Fermi level.

  19. LaCrO3 heteroepitaxy on SrTiO3(001) by molecular beam epitaxy

    SciTech Connect (OSTI)

    Qiao, Liang; Droubay, Timothy C.; Bowden, Mark E.; Shutthanandan, V.; Kaspar, Tiffany C.; Chambers, Scott A.

    2011-08-09

    Stoichiometric, epitaxial LaCrO3 films have been grown on TiO2-terminated SrTiO3(001) substrates by molecular beam epitaxy using O2 as the oxidant. Film growth occurred in a layer-by-layer fashion, giving rise to structurally excellent films and surfaces which preserve the step-terrace structure of the substrate. The critical thickness is in excess of 500 . Near-surface Cr(III) is highly susceptible to further oxidation to Cr(V), leading to the formation of a disordered phase upon exposure to atomic oxygen. Recovery of the original epitaxial LaCrO3 phase is readily achieved by vacuum annealing.

  20. Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Botton, G. A.; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.

    2012-11-01

    A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

  1. Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy

    SciTech Connect (OSTI)

    Yu, Fengmei; Ren, Lizhu; Meng, Meng; Wang, Yunjia; Yang, Mei; Wu, Shuxiang; Li, Shuwei

    2014-04-07

    Manganese nitrides thin films on MgO (100) substrates with and without Cu-doping have been fabricated by plasma assisted molecular beam epitaxy. Antiperovskite compounds Mn{sub 3.6}Cu{sub 0.4}N have been grown in the case of Cu-doping, and the pure Mn{sub 3}N{sub 2} single crystal has been obtained without Cu-doping. The Mn{sub 3.6}Cu{sub 0.4}N exhibits ferrimagnetism, and the magnetization of Mn{sub 3.6}Cu{sub 0.4}N increases upon the temperature decreasing from 300 K to 5 K, similar to Mn{sub 4}N. The exchange bias (EB) effects emerge in the Mn{sub 3.6}Cu{sub 0.4}N films. The EB behavior is originated from the interfaces between ferrimagnetic Mn{sub 3.6}Cu{sub 0.4}N and antiferromagnetic metal Mn, which is verified to be formed by the data of x-ray photoelectron spectroscopy. The present results not only provide a strategy for producing functional antiperovskite manganese nitrides, but also shed promising light on fabricating the exchange bias part of spintronic devices.

  2. Molecular beam epitaxial growth of Bi{sub 2}Se{sub 3} nanowires and nanoflakes

    SciTech Connect (OSTI)

    Knebl, G. M. Gessler, J. R.; Kamp, M.; Höfling, S.

    2014-09-29

    Topological Insulators are in focus of immense research efforts and rapid scientific progress is obtained in that field. Bi{sub 2}Se{sub 3} has proven to be a topological insulator material that provides a large band gap and a band structure with a single Dirac cone at the Γ-point. This makes Bi{sub 2}Se{sub 3} one of the most promising three dimensional topological insulator materials. While Bi{sub 2}Se{sub 3} nanowires and nanoflakes so far were fabricated with different methods and for different purposes, we here present the first Bi{sub 2}Se{sub 3} nanowires as well as nanoflakes grown by molecular beam epitaxy. The nanostructures were nucleated on pretreated, silicon (100) wafers. Altering the growth conditions nanoflakes could be fabricated instead of nanowires; both with high crystalline quality, confirmed by scanning electron microscopy as well as transmission electron microscopy. These nanostructures have promise for spintronic devices and Majorana fermion observation in contact to superconductor materials.

  3. LaCrO{sub 3} heteroepitaxy on SrTiO{sub 3}(001) by molecular beam epitaxy

    SciTech Connect (OSTI)

    Qiao, L.; Droubay, T. C.; Bowden, M. E.; Shutthanandan, V.; Kaspar, T. C.; Chambers, S. A.

    2011-08-08

    Stoichiometric, epitaxial LaCrO{sub 3} films have been grown on SrTiO{sub 3}(001) by molecular beam epitaxy using O{sub 2} as the oxidant. Films grew in a layer-by-layer fashion, giving rise to coherently strained, structurally excellent films and surfaces which preserve the step-terrace structure of the substrate. The critical thickness is in excess of 500 A. Cr(III) near the surface is easily oxidized to Cr(V) upon exposure to atomic oxygen and reduction back to Cr(III) is readily achieved by vacuum annealing, resulting in tunability of the charge state at the B-site cation.

  4. Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Zuo Zheng; Morshed, Muhammad; Liu Jianlin; Beyermann, W. P.; Zheng Jianguo; Xin Yan

    2013-03-15

    Strong room-temperature ferromagnetism is demonstrated in single crystalline Mn-doped ZnO thin films grown by molecular beam epitaxy. Very low Mn doping concentration is investigated, and the measured magnetic moment is much larger than what is expected for an isolated ion based on Hund's rules. The ferromagnetic behavior evolves with Mn concentration. Both magnetic anisotropy and anomalous Hall effect confirm the intrinsic nature of ferromagnetism. While the Mn dopant plays a crucial role, another entity in the system is needed to explain the observed large magnetic moments.

  5. Growth window and effect of substrate symmetry in hybrid molecular beam epitaxy of a Mott insulating rare earth titanate

    SciTech Connect (OSTI)

    Moetakef, Pouya; Zhang, Jack Y.; Raghavan, Santosh; Kajdos, Adam P.; Stemmer, Susanne

    2013-07-15

    The conditions for the growth of stoichiometric GdTiO{sub 3} thin films by molecular beam epitaxy (MBE) are investigated. It is shown that relatively high growth temperatures (>750 Degree-Sign C) are required to obtain an MBE growth window in which only the stoichiometric film grows for a range of cation flux ratios. This growth window narrows with increasing film thickness. It is also shown that single-domain films are obtained by the growth on a symmetry-matched substrate. The influence of lattice mismatch strain on the electrical and magnetic characteristics of the GdTiO{sub 3} thin film is investigated.

  6. Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

    SciTech Connect (OSTI)

    Wang, Q.; Zhao, S.; Connie, A. T.; Shih, I.; Mi, Z.; Gonzalez, T.; Andrews, M. P.; Du, X. Z.; Lin, J. Y.; Jiang, H. X.

    2014-06-02

    The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free exciton emission measured at room temperature. The photoluminescence intensity is significantly enhanced, compared to previously reported AlN epilayer. Moreover, the presence of phonon replicas with an energy separation of ?100?meV was identified to be associated with the surface-optical phonon rather than the commonly reported longitudinal-optical phonon, which is further supported by the micro-Raman scattering experiments.

  7. Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

    SciTech Connect (OSTI)

    Izhnin, I. I.; Dvoretsky, S. A.; Mikhailov, N. N.; Varavin, V. S.; Mynbaev, K. D.; Fitsych, O. I.; Pociask-Bialy, M.; Sheregii, E.; Voitsekhovskii, A. V.

    2014-04-28

    A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of stirring defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700?C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.

  8. Self-corrected Sensors Based On Atomic Absorption Spectroscopy For Atom Flux Measurements In Molecular Beam Epitaxy

    SciTech Connect (OSTI)

    Du, Yingge; Droubay, Timothy C.; Liyu, Andrey V.; Li, Guosheng; Chambers, Scott A.

    2014-04-24

    A high sensitivity atom flux sensor based on atomic absorption spectroscopy has been designed and implemented to control electron beam evaporators and effusion cells in a molecular beam epitaxy system. Using a high-resolution spectrometer and a two-dimensional charge coupled device (CCD) detector in a double-beam configuration, we employ a non-resonant line or a resonant line with lower absorbance from the same hollow cathode lamp as the reference for nearly perfect background correction and baseline drift removal. This setup also significantly shortens the warm-up time needed compared to other sensor technologies and drastically reduces the noise coming from the surrounding environment. In addition, the high-resolution spectrometer allows the most sensitive resonant line to be isolated and used to provide excellent signal-to-noise ratio.

  9. Self-corrected sensors based on atomic absorption spectroscopy for atom flux measurements in molecular beam epitaxy

    SciTech Connect (OSTI)

    Du, Y. E-mail: scott.chambers@pnnl.gov; Liyu, A. V.; Droubay, T. C.; Chambers, S. A. E-mail: scott.chambers@pnnl.gov; Li, G.

    2014-04-21

    A high sensitivity atom flux sensor based on atomic absorption spectroscopy has been designed and implemented to control electron beam evaporators and effusion cells in a molecular beam epitaxy system. Using a high-resolution spectrometer and a two-dimensional charge coupled device detector in a double-beam configuration, we employ either a non-resonant line or a resonant line with low cross section from the same hollow cathode lamp as the reference for nearly perfect background correction and baseline drift removal. This setup also significantly shortens the warm-up time needed compared to other sensor technologies and drastically reduces the noise coming from the surrounding environment. In addition, the high-resolution spectrometer allows the most sensitive resonant line to be isolated and used to provide excellent signal-to-noise ratio.

  10. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  11. Non-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room temperature

    SciTech Connect (OSTI)

    Taioli, Simone; Garberoglio, Giovanni; Simonucci, Stefano; Beccara, Silvio a; Aversa, Lucrezia; Nardi, Marco; Verucchi, Roberto; Iannotta, Salvatore; Dapor, Maurizio; and others

    2013-01-28

    In this work, we investigate the processes leading to the room-temperature growth of silicon carbide thin films by supersonic molecular beam epitaxy technique. We present experimental data showing that the collision of fullerene on a silicon surface induces strong chemical-physical perturbations and, for sufficient velocity, disruption of molecular bonds, and cage breaking with formation of nanostructures with different stoichiometric character. We show that in these out-of-equilibrium conditions, it is necessary to go beyond the standard implementations of density functional theory, as ab initio methods based on the Born-Oppenheimer approximation fail to capture the excited-state dynamics. In particular, we analyse the Si-C{sub 60} collision within the non-adiabatic nuclear dynamics framework, where stochastic hops occur between adiabatic surfaces calculated with time-dependent density functional theory. This theoretical description of the C{sub 60} impact on the Si surface is in good agreement with our experimental findings.

  12. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    SciTech Connect (OSTI)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-04-15

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without breaking vacuum, and convenient visual access to the sample and tip inside a superconducting magnet cryostat. A sample/tip handling system is optimized for both the molecular beam epitaxy growth system and the scanning tunneling microscope system. The sample/tip handing system enables in situ STM studies on epitaxially grown samples, and tip exchange in the superconducting magnet cryostat. The hybrid molecular beam epitaxy and low temperature scanning tunneling microscopy system is capable of growing semiconductor-based hetero-structures with controlled accuracy down to a single atomic-layer and imaging them down to atomic resolution.

  13. Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Li, H.; Daniels-Race, T.; Wang, Z.

    1999-03-01

    Growth mode and strain relaxation of molecular-beam-epitaxy grown InAs/InAlAs/InP (111)A system have been investigated using reflection high-energy electron diffraction, transmission electron microscopy, atomic force microscopy, and photoluminescence measurements. In direct contrast to the well-studied InAs/GaAs system, our experimental results show that the InAs grown on InAlAs/InP (111)A follows the Stranski{endash}Krastanov mode. Both self-organized InAs quantum dots and relaxed InAs islands are formed depending on the InAs coverage. Intense luminescence signals from both the InAs quantum dots and wetting layer are observed. The luminescence efficiency of (111)A samples is comparable to that of (001) samples, suggesting the feasibility of fabricating quantum dot optoelectronic devices on InP (111)A surfaces. {copyright} {ital 1999 American Institute of Physics.}

  14. Molecular beam epitaxial growth and characterization of Bi{sub 2}Se{sub 3}/II-VI semiconductor heterostructures

    SciTech Connect (OSTI)

    Chen, Zhiyi Zhao, Lukas; Krusin-Elbaum, Lia; Garcia, Thor Axtmann; Tamargo, Maria C.; Hernandez-Mainet, Luis C.; Deng, Haiming

    2014-12-15

    Surfaces of three-dimensional topological insulators (TIs) have been proposed to host quantum phases at the interfaces with other types of materials, provided that the topological properties of interfacial regions remain unperturbed. Here, we report on the molecular beam epitaxy growth of II-VI semiconductorTI heterostructures using c-plane sapphire substrates. Our studies demonstrate that Zn{sub 0.49}Cd{sub 0.51}Se and Zn{sub 0.23}Cd{sub 0.25}Mg{sub 0.52}Se layers have improved quality relative to ZnSe. The structures exhibit a large relative upward shift of the TI bulk quantum levels when the TI layers are very thin (?6nm), consistent with quantum confinement imposed by the wide bandgap II-VI layers. Our transport measurements show that the characteristic topological signatures of the Bi{sub 2}Se{sub 3} layers are preserved.

  15. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang; Liu Xinyu; Furdyna, Jacek K.; Smith, David J.

    2012-03-19

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  16. Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy

    DOE Patents [OSTI]

    Chambers, Scott A.

    2006-02-21

    A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fluxes are individually controlled at the substrate so as to grow the spinel-structured metal oxide on the substrate and the metal oxide is substantially in a thermodynamically stable state during the growth of the metal oxide. A particular embodiment of the present invention encompasses a method of making a spinel-structured binary ferrite, including Co ferrite, without the need of a post-growth anneal to obtain the desired equilibrium state.

  17. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO{sub 3} films

    SciTech Connect (OSTI)

    Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat

    2013-11-18

    We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO{sub 3} film grown on (La{sub 0.3}Sr{sub 0.7})(Al{sub 0.65}Ta{sub 0.35})O{sub 3} (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ∼12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness.

  18. Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.

    2012-12-15

    Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm{sup −1}, by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm{sup −1} in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T{sub c} < 50 K. -- Abstract: Spectroscopic and magnetic properties of Mn doped GaN, and GaN epitaxial films have been investigated by employing micro-photoluminescence, micro-Raman, and temperature dependent magneto-resistance measurements. The HR-XRD profiles have shown that the epitaxial films are in hexagonal wurtzite structures. Morphology and composition of the films have been examined by field emission scanning electron microscopy, and energy-dispersive X-ray analysis. Micro-photoluminescence spectrum displayed a dominant near band edge emission at 362 nm, which is assigned to near band edge transition within the hexagonal structure of GaN. Raman scattering profiles showed a new vibrational mode at 578 cm{sup −1}, which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

  19. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  20. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  1. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  2. Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH{sub 3}-molecular beam epitaxy

    SciTech Connect (OSTI)

    Fireman, Micha N.; Browne, David A.; Mazumder, Baishakhi; Speck, James S.; Mishra, Umesh K.

    2015-05-18

    The results of vertical transport through nitride heterobarrier structures grown by ammonia molecular beam epitaxy are presented. Structures are designed with binary layers to avoid the effects of random alloy fluctuations in ternary nitride barriers. The unintentional incorporation of Ga in the AlN growth is investigated by atom probe tomography and is shown to be strongly dependent on both the NH{sub 3} flowrate and substrate temperature growth parameters. Once nominally pure AlN layer growth conditions are achieved, structures consisting of unintentionally doped (UID) GaN spacer layers adjacent to a nominally pure AlN are grown between two layers of n+ GaN, from which isotype diodes are fabricated. Varying the design parameters of AlN layer thickness, UID spacer layer thickness, and threading dislocation density show marked effects on the vertical transport characteristics of these structures. The lack of significant temperature dependence, coupled with Fowler-Nordheim and/or Milliken-Lauritsen analysis, point to a prevalently tunneling field emission mechanism through the AlN barrier. Once flatband conditions in the UID layer are achieved, electrons leave the barrier with significant energy. This transport mechanism is of great interest for applications in hot electron structures.

  3. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    SciTech Connect (OSTI)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  4. Magnetic properties of MnSb inclusions formed in GaSb matrix directly during molecular beam epitaxial growth

    SciTech Connect (OSTI)

    Lawniczak-Jablonska, Krystyna; Wolska, Anna; Klepka, Marcin T.; Kret, Slawomir; Kurowska, Boguslawa; Kowalski, Bogdan J.; Twardowski, Andrzej; Wasik, Dariusz; Kwiatkowski, Adam; Sadowski, Janusz

    2011-04-01

    Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover, the magnetic anisotropy was found which was present also at room temperature, and it was proved that by choosing a proper substrate it is possible to control the direction of easy axis of inclusions' magnetization moment between in-plane and out-of-plane; the latter is important in view of potential applications in spintronic devices.

  5. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an ordermore » of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

  6. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Luo, Guangfu; Yang, Shujiang; Li, Jincheng; Arjmand, Mehrdad; Szlufarska, Izabela; Brown, April S.; Kuech, Thomas F.; Morgan, Dane

    2015-07-14

    We investigate the molecular beam epitaxy (MBE) growth of GaAs1-xBix film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the incident molecules (As₂ molecule, Ga atom, Bi atom, and Bi₂ molecule) on the (2 x 1)-Gasub||Bi surface and a proposed q(1 x 1)-Gasub||AsAs surface has a quasi-(1 x 1) As layer above the Ga-terminated GaAs substrate and a randomly oriented As dimer layer on top. We obtain the desorption and diffusion barriers of the adsorbed molecules and also themore » reaction barriers of three key processes related to Bi evolution, namely, Bi incorporation, As/Bi exchange, and Bi clustering. The results help explain the experimentally observed dependence of Bi incorporation on the As/Ga ratio and growth temperature. Furthermore, we find that As₂ exchange with Bi of the (2 x 1)-Gasub||Bi surface is a key step controlling the kinetics of the Bi incorporation. Finally, we explore two possible methods to enhance the Bi incorporation, namely, replacing the MBE growth mode from codeposition of all fluxes with a sequential deposition of fluxes and applying asymmetric in-plane strain to the substrate.« less

  7. Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Park, K. W.; Ravindran, Sooraj; Kang, S. J.; Hwang, H. Y.; Jho, Y. D.; Park, C. Y.; Jo, Y. R.; Kim, B. J.; Lee, Y. T.

    2014-07-28

    We report the enhancement of the minority carrier lifetime of GaInP with a lateral composition modulated (LCM) structure grown using molecular beam epitaxy (MBE). The structural and optical properties of the grown samples are studied by transmission electron microscopy and photoluminescence, which reveal the formation of vertically aligned bright and dark slabs corresponding to Ga-rich and In-rich GaInP regions, respectively, with good crystal quality. With the decrease of V/III ratio during LCM GaInP growth, it is seen that the band gap of LCM GaInP is reduced, while the PL intensity remains high and is comparable to that of bulk GaInP. We also investigate the minority carrier lifetime of LCM structures made with different flux ratios. It is found that the minority carrier lifetime of LCM GaInP is ?37 times larger than that of bulk GaInP material, due to the spatial separation of electrons and holes by In-rich and Ga-rich regions of the LCM GaInP, respectively. We further demonstrate that the minority carrier lifetime of the grown LCM GaInP structures can easily be tuned by simply adjusting the V/III flux ratio during MBE growth, providing a simple yet powerful technique to tailor the electrical and optical properties at will. The exceptionally high carrier lifetime and the reduced band gap of LCM GaInP make them a highly attractive candidate for forming the top cell of multi-junction solar cells and can enhance their efficiency, and also make them suitable for other optoelectronics devices, such as photodetectors, where longer carrier lifetime is beneficial.

  8. Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production

    SciTech Connect (OSTI)

    Novikov, S. V.; Staddon, C. R.; Foxon, C. T.; Yu, K. M.; Broesler, R.; Hawkridge, M.; Liliental-Weber, Z.; Walukiewicz, W.; Denlinger, J.; Demchenko, I.

    2009-10-06

    The authors have succeeded in growing GaN1?xAsx alloys over a large composition range (0 < x < 0.8) by plasma-assisted molecular beam epitaxy. The enhanced incorporation of As was achieved by growing the films with high As{sub 2} flux at low (as low as 100 C) growth temperatures, which is much below the normal GaN growth temperature range. Using x-ray and transmission electron microscopy, they found that the GaNAs alloys with high As content x > 0.17 are amorphous. Optical absorption measurements together with x-ray absorption and emission spectroscopy results reveal a continuous gradual decrease in band gap from -3.4 to < 1 eV with increasing As content. The energy gap reaches its minimum of -0.8 eV at x - 0.8. The composition dependence of the band gap of the crystalline GaN{sub 1?x}As{sub x} alloys follows the prediction of the band anticrossing model (BAC). However, our measured band gap of amorphous GaN{sub 1?x}As{sub x} with 0.3 < x < 0.8 are larger than that predicted by BAC. The results seem to indicate that for this composition range the amorphous GaN{sub 1?x}As{sub x} alloys have short-range ordering that resembles random crystalline GaN{sub 1?x}As{sub x} alloys. They have demonstrated the possibility of the growth of amorphous GaN{sub 1?x}As{sub x} layers with variable As content on glass substrates

  9. Effects of hydrogen on the optical properties of ZnCdO/ZnO quantum wells grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Buyanova, I. A.; Wang, X. J.; Chen, W. M.; Pozina, G.; Lim, W.; Norton, D. P.; Pearton, S. J.; Osinsky, A.; Dong, J. W.; Hertog, B.

    2008-06-30

    Temperature-dependent cw- and time-resolved photoluminescence (PL), as well as optically detected magnetic resonance (ODMR) measurements are employed to evaluate effects of deuterium (2H) doping on optical properties of ZnCdO/ZnO quantum well structures grown by molecular beam epitaxy. It is shown that incorporation of {sup 2}H from a remote plasma causes a substantial improvement in radiative efficiency of the investigated structures. Based on transient PL measurements, the observed improvements are attributed to efficient passivation by hydrogen of competing nonradiative recombination centers via defects. This conclusion is confirmed from the ODMR studies.

  10. Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Zuo Zheng; Zhou Huimei; Olmedo, Mario J.; Kong Jieying; Liu Jianlin; Beyermann, Ward P.; Zheng Jianguo; Xin Yan

    2012-09-01

    Strong room-temperature ferromagnetism is demonstrated in single crystalline Mn-doped ZnO grown by molecular beam epitaxy. With a low Mn concentration of 2 Multiplication-Sign 10{sup 19} cm{sup -3}, Mn-doped ZnO films exhibited room-temperature ferromagnetism with a coercivity field larger than 200 Oe, a large saturation moment of 6 {mu}{sub B}/ion, and a large residue moment that is {approx}70% of the saturation magnetization. Isolated ions with long range carrier mediated spin-spin coupling may be responsible for the intrinsic ferromagnetism.

  11. Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates

    SciTech Connect (OSTI)

    Akabori, M.; Yamada, S.

    2013-12-04

    We prepared InAs nanowires (NWs) by lateral growth on GaAs (110) masked substrates in molecular beam epitaxy. We measured magneto-transport properties of the InAs NWs. In spite of parallel-NW multi-channels, we observed fluctuating magneto-conductance. From the fluctuation, we evaluated phase coherence length as a function of measurement temperature, and found decrease in the length with increase in the temperature. We also evaluate phase coherence length as a function of gate voltage.

  12. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Novikov, S. V.; Ting, M.; Yu, K. M.; Sarney, W. L.; Martin, R. W.; Svensson, S. P.; Walukiewicz, W.; Foxon, C. T.

    2014-10-01

    In this paper we report our study on n-type Te doping of amorphous GaN1-xAsx layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAsx layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAsx layers has been determined.

  13. Clarification of enhanced ferromagnetism in Be-codoped InMnP fabricated using Mn/InP:Be bilayers grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Shon, Yoon; Lee, Sejoon; Taek Yoon, Im; Jeon, H. C.; Lee, D. J.; Kang, T. W.; Song, J. D.; Yoon, Chong S.; Kim, D. Y.; Park, C. S.

    2011-11-07

    The p-type InMnP:Be epilayers were prepared by the sequential growth of Mn/InP:Be bilayers using molecular-beam-epitaxy and the subsequent in-situ annealing at 200-300 deg. C. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InMnP. The ferromagnetic transition in InMnP:Be was observed to occur at the elevated temperature of {approx}140 K, and the ferromagnetic spin-domains clearly appeared in magnetic force microscopy images. The improved ferromagnetic properties are attributed to the increased p-d hybridation due to high p-type conductivity of InMnP:Be (p {approx} 10{sup 20 }cm{sup -3}). The results suggest that enhanced ferromagnetism can be effectively obtained from Be-codoped InMnP.

  14. Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

    SciTech Connect (OSTI)

    Dupuy, E.; Regreny, P.; Robach, Y.; Gendry, M.; Chauvin, N.; Tranvouez, E.; Bremond, G.; Bru-Chevallier, C.; Patriarche, G.

    2006-09-18

    The authors report on a postgrowth method to obtain low density InAs/InP(001) quantum dots by solid-source molecular beam epitaxy. They used an approach based on the ripening of the InAs sticks, which is triggered by the sample cooling under arsenic overpressure, before InP capping. Atomic force microscopy images show the evolution of InAs islands from sticks oriented along the [1-10] direction to dot-shaped islands with a density that can be reduced to about 2x10{sup 9} dots/cm{sup 2}. Macro- and microphotoluminescence reveal that these diluted InAs dots exhibit a strong spatial confinement and emit in the 1.55 {mu}m range.

  15. Double capping of molecular beam epitaxy grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy

    SciTech Connect (OSTI)

    Ulloa, J. M.; Koenraad, P. M.; Gapihan, E.; Letoublon, A.; Bertru, N.

    2007-08-13

    Cross-sectional scanning tunneling microscopy was used to study at the atomic scale the double capping process of self-assembled InAs/InP quantum dots (QDs) grown by molecular beam epitaxy on a (311)B substrate. The thickness of the first capping layer is found to play a mayor role in determining the final results of the process. For first capping layers up to 3.5 nm, the height of the QDs correspond to the thickness of the first capping layer. Nevertheless, for thicknesses higher than 3.5 nm, a reduction in the dot height compared to the thickness of the first capping layer is observed. These results are interpreted in terms of a transition from a double capping to a classical capping process when the first capping layer is thick enough to completely cover the dots.

  16. Room temperature photoluminescence from In{sub x}Al{sub (1?x)}N films deposited by plasma-assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Kong, W. Jiao, W. Y.; Kim, T. H.; Brown, A. S.; Mohanta, A.; Roberts, A. T.; Fournelle, J.; Losurdo, M.; Everitt, H. O.

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 1012?nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1?x)}N were comparatively investigated for indium compositions ranging from x?=?0.092 to 0.235, including x?=?0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  17. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    SciTech Connect (OSTI)

    DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang; School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 ; Zhao, Xin-Hao; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287

    2013-11-04

    CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

  18. Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Zhao, Xin-Hao; Campbell, Calli M.; DiNezza, Michael J.; Liu, Shi; Zhao, Yuan; Zhang, Yong-Hang

    2014-12-22

    The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5??s and (4.7??0.4)??10{sup 2?}cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179?ns is observed in the DH with a 2??m thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.

  19. Self-assembly of compositionally modulated Ga{sub 1−x}Mn{sub x}As multilayers during molecular beam epitaxy

    SciTech Connect (OSTI)

    Gallardo-Hernández, S.; Martinez-Velis, I.; Ramirez-Lopez, M.; Lopez-Lopez, M.; Kudriatsev, Y.; Escobosa-Echavarria, A.; Luiz Morelhao, S.

    2013-11-04

    GaMnAs structures were grown on GaAs(100) substrates by molecular beam epitaxy employing different growth parameters. We studied manganese incorporation employing secondary ion mass spectrometry (SIMS). At a growth temperature of 300 °C, we observed a self-assembled modulation of the manganese concentration. SIMS depth profiles were analyzed employing a depth resolution function taking into account sputtering-induced broadening of the original distribution and segregation. We found a Mn segregation length along the growth direction of ∼4 nm. The presence of GaMnAs multilayers was corroborated by high-resolution x-ray diffraction. Spinodal decomposition is a possible mechanism for the spontaneous formation of the multilayer structure.

  20. Properties of molecular beam epitaxy grown Eu{sub x}(transition metal){sub y} films (transition metals: Mn, Cr)

    SciTech Connect (OSTI)

    Balin, K.; Nowak, A.; Gibaud, A.; Szade, J.; Celinski, Z.

    2011-04-01

    The electronic and crystallographic structures, as well as the magnetic properties, of Eu{sub x}(transition metal){sub y} (transition metals: Mn, Cr) thin films grown by molecular beam epitaxy were studied. Relative changes of the Eu/Mn and Eu/Cr ratios derived from the XPS lines, as well as x-ray reflectivity, indicate mixing of the Eu/Mn and Eu/Cr layers. Valency transitions from Eu{sup 2+} to Eu{sup 3+} were observed in both systems for most studied stoichiometries. A transition to a magnetically ordered phase was observed at 15 K, 40 K, and 62 K for selected films in the Eu-Mn system, and at 50 K for the film with a Eu/Cr ratio of 0.5.

  1. Domain formation due to surface steps in topological insulator Bi{sub 2}Te{sub 3} thin films grown on Si (111) by molecular beam epitaxy

    SciTech Connect (OSTI)

    Borisova, S.; Kampmeier, J.; Mussler, G.; Grützmacher, D.; Jülich Aachen Research Alliance, Fundamentals of Future Information Technologies, Jülich 52425 ; Luysberg, M.

    2013-08-19

    The atomic structure of topological insulators Bi{sub 2}Te{sub 3} thin films on Si (111) substrates grown in van der Waals mode by molecular beam epitaxy has been investigated by in situ scanning tunneling microscopy and scanning transmission electron microscopy. Besides single and multiple quintuple layer (QL) steps, which are typical for the step-flow mode of growth, a number of 0.4 QL steps is observed. We determine that these steps originate from single steps at the substrate surface causing domain boundaries in the Bi{sub 2}Te{sub 3} film. Due to the peculiar structure of these domain boundaries the domains are stable and penetrate throughout the entire film.

  2. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    SciTech Connect (OSTI)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80150?nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  3. X-ray magnetic circular dichroism for Co{sub x}Fe{sub 4?x}N (x?=?0, 3, 4) films grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Ito, Keita; Sanai, Tatsunori; Yasutomi, Yoko; Toko, Kaoru; Suemasu, Takashi; Zhu, Siyuan; Kimura, Akio; Takeda, Yukiharu; Saitoh, Yuji

    2014-05-07

    We evaluated orbital (m{sub orb}) and spin magnetic moments (m{sub spin}) of Co{sub x}Fe{sub 4?x}N (x?=?0, 3, 4) epitaxial thin films grown by molecular beam epitaxy using x-ray magnetic circular dichroism, and discussed the dependence of these values on x. Site-averaged m{sub spin} value of Fe atoms was deduced to be 1.91??{sub B} per atom, and that of Co atoms to be 1.47??{sub B} per atom in Co{sub 3}FeN at 300?K. These values are close to 1.87??{sub B} per Fe atom in Fe{sub 4}N and 1.43??{sub B} per Co atom in Co{sub 4}N, respectively. This result implies that the Fe and Co atoms in the Co{sub 3}FeN films were located both at corner and face-centered sites in the anti-perovskite lattice. Spin magnetic moments per unit cell were decreased linearly with increasing x in Co{sub x}Fe{sub 4?x}N. This tendency is in good agreement with theory predicted by the first-principle calculation.

  4. Structural and band alignment properties of Al{sub 2}O{sub 3} on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y.; Maurya, D.; Priya, S.; Patra, P. K.; Ma, A. W. K.; Aphale, A.; Macwan, I.

    2013-04-07

    Structural and band alignment properties of atomic layer Al{sub 2}O{sub 3} oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al{sub 2}O{sub 3} film and the Ge epilayer. The extracted valence band offset, {Delta}E{sub v}, values of Al{sub 2}O{sub 3} relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in {Delta}E{sub v} related to the crystallographic orientation were {Delta}E{sub V}(110)Ge>{Delta}E{sub V}(100)Ge{>=}{Delta}E{sub V}(111)Ge and the conduction band offset, {Delta}E{sub c}, related to the crystallographic orientation was {Delta}E{sub c}(111)Ge>{Delta}E{sub c}(110)Ge>{Delta}E{sub c}(100)Ge using the measured {Delta}E{sub v}, bandgap of Al{sub 2}O{sub 3} in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

  5. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    SciTech Connect (OSTI)

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P.; Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A.; Christofilos, D.

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the M-shape dependence of the (112{sup }0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  6. Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Brubaker, Matt D.; Rourke, Devin M.; Sanford, Norman A.; Bertness, Kris A.; Bright, Victor M.

    2011-09-01

    Low-temperature AlN buffer layers grown via plasma-assisted molecular beam epitaxy on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions, with their size, shape, and tilt determined by the AlN V/III flux ratio. GaN nanowires were frequently observed to adopt the structural characteristics of the underlying AlN columns, including the size and the degree of tilt. Piezoresponse force microscopy and polarity-sensitive etching indicate that the AlN films and the protruding columns have a mixed crystallographic polarity. Convergent beam electron diffraction indicates that GaN nanowires are Ga-polar, suggesting that Al-polar columns are nanowire nucleation sites for Ga-polar nanowires. GaN nanowires of low density could be grown on AlN buffers that were predominantly N-polar with isolated Al-polar columns, indicating a high growth rate for Ga-polar nanowires and suppressed growth of N-polar nanowires under typical growth conditions. AlN buffer layers grown under slightly N-rich conditions (V/III flux ratio = 1.0 to 1.3) were found to provide a favorable growth surface for low-density, coalescence-free nanowires.

  7. Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

    SciTech Connect (OSTI)

    Barate, P.; Zhang, T. T.; Vidal, M.; Renucci, P.; Marie, X.; Amand, T.; Liang, S.; Devaux, X.; Hehn, M.; Mangin, S.; Lu, Y.; Frougier, J.; Jaffrs, H.; George, J. M.; Zheng, Y.; Tao, B.; Han, X. F.

    2014-07-07

    An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy. The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (P{sub c}) with the increase of annealing temperature, followed by a saturation of P{sub c} beyond 350?C annealing. Since the increase of P{sub c} starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential for an optimal spin injection into semiconductor.

  8. Improved Performance of GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy Using Increased Growth Rate Instead of Surfactants

    SciTech Connect (OSTI)

    Ptak, A. J.; France, R.; Jiang, C. S.; Romero, M. J.

    2009-01-01

    GaInNAs is potentially useful for increasing the conversion efficiency of multijunction solar cells if low photocurrents and photovoltages can be increased. Wide-depletion width devices generate significant photocurrents using an n-i-p structure grown by molecular-beam epitaxy, but these wide depletion widths are only realized in a region of parameter space that leads to rough surface morphologies. Surfactants are effective at reducing the surface roughness, but lead to increased defect densities and changes in the net acceptor or donor concentration. Here, we show that increasing the growth rate of GaInNAs solar cells leads to smooth surfaces without the use of a surfactant, even at high In compositions and substrate temperatures. No degradation in material quality is observed when increasing the growth rate from 1.5 to 3.0 {micro}m/h, but a shunt resistance does appear for the high-growth-rate samples. This shunt is attributed to increased spitting of the Ga cell, leading to an increase in the oval defect density, at the higher effusion cell temperatures used to achieve high growth rates. As with the case of Bi in GaInNAs, increased growth rates also appear to increase the net donor concentration, but it is not clear if these effects have the same cause.

  9. Effect of Ag addition to L1{sub 0} FePt and L1{sub 0} FePd films grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Tokuoka, Y.; Seto, Y.; Kato, T.; Iwata, S.

    2014-05-07

    L1{sub 0} ordered FePt-Ag (5?nm) and FePd-Ag (5?nm) films were grown on MgO (001) substrate at temperatures of 250400?C by using molecular beam epitaxy method, and their crystal and surface structures, perpendicular magnetic anisotropies and Curie temperatures were investigated. In the case of FePt-Ag, Ag addition with the amount of 1020 at.?% was effective to promote L1{sub 0} ordering and granular growth, resulting in the increase of the perpendicular magnetic anisotropy and coercivity of the FePt-Ag films. On the other hand, in the case of FePd-Ag, Ag addition changed the surface morphology from island to continuous film associated with the reductions of its coercivity and perpendicular anisotropy. The variations of lattice constants and Curie temperature with Ag addition were significantly different between FePt-Ag and FePd-Ag. For FePd-Ag, the c and a axes lattice spacings and Curie temperature gradually changed with increasing Ag content, while they unchanged for FePt-Ag. These results suggest the possibility of the formation of FePdAg alloy in FePd-Ag, while Ag segregation in FePt-Ag.

  10. Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Mary?ski, A.; S?k, G.; Musia?, A.; Andrzejewski, J.; Misiewicz, J.; Gilfert, C.; Reithmaier, J. P.; Capua, A.; Karni, O.; Gready, D.; Eisenstein, G.; Atiya, G.; Kaplan, W. D.; Klling, S.

    2013-09-07

    The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-like objects grown by molecular beam epitaxy have been investigated. These nanostructures were found to have significantly more symmetrical shapes compared to the commonly obtained dash-like geometries typical of this material system. The enhanced symmetry has been achieved due to the use of an As{sub 2} source and the consequent shorter migration length of the indium atoms. Structural studies based on a combination of scanning transmission electron microscopy (STEM) and atom probe tomography (APT) provided detailed information on both the structure and composition distribution within an individual nanostructure. However, it was not possible to determine the lateral aspect ratio from STEM or APT. To verify the in-plane geometry, electronic structure calculations, including the energy levels and transition oscillator strength for the QDs have been performed using an eight-band kp model and realistic system parameters. The results of calculations were compared to measured polarization-resolved photoluminescence data. On the basis of measured degree of linear polarization of the surface emission, the in-plane shape of the QDs has been assessed proving a substantial increase in lateral symmetry. This results in quantum-dot rather than quantum-dash like properties, consistent with expectations based on the growth conditions and the structural data.

  11. Photochemical Properties, Composition, and Structure in Molecular Beam Epitaxy Grown Fe Doped and (Fe,N) Codoped Rutile TiO2(110)

    SciTech Connect (OSTI)

    Mangham, Andrew N.; Govind, Niranjan; Bowden, Mark E.; Shutthanandan, V.; Joly, Alan G.; Henderson, Michael A.; Chambers, Scott A.

    2011-08-11

    We have investigated the surface photochemical properties of Fe "doped" and (Fe,N) co-doped homoepitaxial rutile TiO2 (110) films grown by plasma assisted molecular beam epitaxy. Fe does not incorporate as an electronic dopant in the rutile lattice, but rather segregates to the film surface. However, co-deposition of Fe with N enhances the solubility of Fe, and DFT calculations suggest that co-dopant complex formation is the driving force behind the enhanced solubility. The co-doped films, in which a few atomic percent of Ti (O) are replaced with Fe (N), exhibit significant disorder compared to undoped films grown under the same conditions, presumably due to dopant-induced strain. Co-doping redshifts the rutile bandgap into the visible. However, the film surfaces are photochemically inert with respect to hole-mediated decomposition of adsorbed trimethyl acetate. The absence of photochemical activity may result from dopant-induced trap and/or recombination sites within the film. This study indicates that enhanced visible light absorptivity in TiO2 does not necessarily result in visible light initiated surface photochemistry.

  12. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix

    SciTech Connect (OSTI)

    Luo, Guangfu; Yang, Shujiang; Li, Jincheng; Arjmand, Mehrdad; Szlufarska, Izabela; Brown, April S.; Kuech, Thomas F.; Morgan, Dane

    2015-07-14

    We investigate the molecular beam epitaxy (MBE) growth of GaAs1-xBix film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the incident molecules (As? molecule, Ga atom, Bi atom, and Bi? molecule) on the (2 x 1)-Gasub||Bi surface and a proposed q(1 x 1)-Gasub||AsAs surface has a quasi-(1 x 1) As layer above the Ga-terminated GaAs substrate and a randomly oriented As dimer layer on top. We obtain the desorption and diffusion barriers of the adsorbed molecules and also the reaction barriers of three key processes related to Bi evolution, namely, Bi incorporation, As/Bi exchange, and Bi clustering. The results help explain the experimentally observed dependence of Bi incorporation on the As/Ga ratio and growth temperature. Furthermore, we find that As? exchange with Bi of the (2 x 1)-Gasub||Bi surface is a key step controlling the kinetics of the Bi incorporation. Finally, we explore two possible methods to enhance the Bi incorporation, namely, replacing the MBE growth mode from codeposition of all fluxes with a sequential deposition of fluxes and applying asymmetric in-plane strain to the substrate.

  13. Structural, morphological, and magnetic characterization of In{sub 1-x}Mn{sub x}As quantum dots grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Ferri, F. A.; Marega, E. Jr.; Coelho, L. N.; Kunets, V. P.; Salamo, G. J.

    2012-08-01

    In this paper, we present a method to order low temperature (LT) self-assembled ferromagnetic In{sub 1-x}Mn{sub x}As quantum dots (QDs) grown by molecular beam epitaxy (MBE). The ordered In{sub 1-x}Mn{sub x}As QDs were grown on top of a non-magnetic In{sub 0.4}Ga{sub 0.6}As/GaAs(100) QDs multi-layered structure. The modulation of the chemical potential, due to the stacking, provides a nucleation center for the LT In{sub 1-x}Mn{sub x}As QDs. For particular conditions, such as surface morphology and growth conditions, the In{sub 1-x}Mn{sub x}As QDs align along lines like chains. This work also reports the characterization of QDs grown on plain GaAs(100) substrates, as well as of the ordered structures, as function of Mn content and growth temperature. The substitutional Mn incorporation in the InAs lattice and the conditions for obtaining coherent and incoherent structures are discussed from comparison between Raman spectroscopy and x-ray analysis. Ferromagnetic behavior was observed for all structures at 2 K. We found that the magnetic moment axis changes from [110] in In{sub 1-x}Mn{sub x}As over GaAs to [1-10] for the ordered In{sub 1-x}Mn{sub x}As grown over GaAs template.

  14. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Masuda, T; Tomasulo, S; Lang, JR; Lee, ML

    2015-03-07

    We have investigated similar to 2.0 eV (AlxGa1-x)(0.51)In0.49P and similar to 1.9 eV Ga0.51In0.49P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (AlxGa1-x)(0.51)In0.49P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V-oc) ranging from 1.29 to 1.30 V for Ga0.51In0.49P cells, and 1.35-1.37 V for (AlxGa1-x)(0.51)In0.49P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W-oc = E-g/q - V-oc) of Ga0.51In0.49P cells to decrease from similar to 575 mV to similar to 565 mV, while that of (AlxGa1-x)(0.51)In0.49P cells remained nearly constant at 620 mV. The constant Woc as a function of substrate offcut for (AlxGa1-x)(0.51)In0.49P implies greater losses from non-radiative recombination compared with the Ga0.51In0.49P devices. In addition to larger Woc values, the (AlxGa1-x)(0.51)In0.49P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga0.51In0.49P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (AlxGa1-x)(0.51)In0.49P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells. (C) 2015 AIP Publishing LLC.

  15. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Masuda, Taizo Tomasulo, Stephanie; Lang, Jordan R.; Lee, Minjoo Larry

    2015-03-07

    We have investigated ∼2.0 eV (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P and ∼1.9 eV Ga{sub 0.51}In{sub 0.49}P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V{sub oc}) ranging from 1.29 to 1.30 V for Ga{sub 0.51}In{sub 0.49}P cells, and 1.35–1.37 V for (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W{sub oc} = E{sub g}/q − V{sub oc}) of Ga{sub 0.51}In{sub 0.49}P cells to decrease from ∼575 mV to ∼565 mV, while that of (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells remained nearly constant at 620 mV. The constant W{sub oc} as a function of substrate offcut for (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P implies greater losses from non-radiative recombination compared with the Ga{sub 0.51}In{sub 0.49}P devices. In addition to larger W{sub oc} values, the (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga{sub 0.51}In{sub 0.49}P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells.

  16. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

    SciTech Connect (OSTI)

    Lang, J. R.; Neufeld, C. J.; Hurni, C. A.; Cruz, S. C.; Matioli, E.; Mishra, U. K.; Speck, J. S.

    2011-04-01

    High external quantum efficiency (EQE) p-i-n heterojunction solar cellsgrown by NH3 -based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorptionmeasurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

  17. Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Liu, Shi; Li, Hua; Cellek, Oray O.; Ding, Ding; Lin, Zhi-Yuan; Steenbergen, Elizabeth H.; He, Zhao-Yu; Johnson, Shane R.; Zhang, Yong-Hang; Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 ; Shen, Xiao-Meng; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 ; Fan, Jin; Smith, David J.; Department of Physics, Arizona State University, Tempe, Arizona 85287 ; Lu, Jing

    2013-02-18

    Molecular beam epitaxial growth of strain-balanced InAs/InAs{sub 1-x}Sb{sub x} type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 Degree-Sign C to 450 Degree-Sign C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 Degree-Sign C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 {mu}m at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.

  18. Two-dimensional weak anti-localization in Bi{sub 2}Te{sub 3} thin film grown on Si(111)-(7 Multiplication-Sign 7) surface by molecular beam epitaxy

    SciTech Connect (OSTI)

    Roy, Anupam; Guchhait, Samaresh; Sonde, Sushant; Dey, Rik; Pramanik, Tanmoy; Rai, Amritesh; Movva, Hema C. P.; Banerjee, Sanjay K. [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)] [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Colombo, Luigi [Texas Instruments, 12500 TI Boulevard, Dallas, Texas 75266 (United States)] [Texas Instruments, 12500 TI Boulevard, Dallas, Texas 75266 (United States)

    2013-04-22

    We report on low temperature transport studies of Bi{sub 2}Te{sub 3} topological insulator thin films grown on Si(111)-(7 Multiplication-Sign 7) surface by molecular beam epitaxy. A sharp increase in the magnetoresistance with magnetic field at low temperature indicates the existence of weak anti-localization. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model, and the extracted phase coherence length shows a power-law dependence with temperature indicating the existence of a two-dimensional system. An insulating ground state has also been observed at low temperature showing a logarithmic divergence of the resistance that appears to be the influence of electron-electron interaction in a two-dimensional system.

  19. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Wang, Juan; Xing, Jun-Liang; Xiang, Wei; Wang, Guo-Wei; Xu, Ying-Qiang; Ren, Zheng-Wei; Niu, Zhi-Chuan

    2014-02-03

    Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877??10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112??10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300?K to 77?K. This study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.

  20. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

    SciTech Connect (OSTI)

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-02-23

    This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600?nm, 400?nm, and 200?nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5?nm, In{sub 0.17}Al{sub 0.83}N1.25?nm, GaN1.5?nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10?}cm{sup ?2} to 10{sup 8?}cm{sup ?2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89?nm, 1.2?nm, and 1.45?nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.

  1. Molecular-beam scattering

    SciTech Connect (OSTI)

    Vernon, M.F.

    1983-07-01

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N/sub 2/ from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HCl ..-->.. NaCl + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(2/sup 2/P/sub 3/2/) and Na(3/sup 2/P/sub 3/2/) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included.

  2. Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

    SciTech Connect (OSTI)

    Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J.; Fan, Dongsheng; Yu, Shuiqing; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 ; Zhao, Yanfei; Lee, Joon Sue; Wang, Jian; The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 ; Wang, Zhiming M.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054; Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083

    2013-07-15

    High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  3. 14th international symposium on molecular beams

    SciTech Connect (OSTI)

    Not Available

    1992-09-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation & dynamics; and surfaces.

  4. 14th international symposium on molecular beams

    SciTech Connect (OSTI)

    Not Available

    1992-01-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation dynamics; and surfaces.

  5. Yuan T. Lee's Crossed Molecular Beam Experiment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Yuan T. Lee's Crossed Molecular Beam Experiment http:web.archive.orgweb20000902074635www.er.doe.govproductionbesYuanLeeExp.html (1 of 4)472006 2:46:13 PM Yuan T. ...

  6. Dudley Herschbach: Chemical Reactions and Molecular Beams

    Office of Scientific and Technical Information (OSTI)

    Dudley Herschbach: Chemical Reactions and Molecular Beams Resources with Additional Information Dudley Herschbach Courtesy of Texas A&M University As a co-recipient of the 1986 Nobel Prize in Chemistry, 'Dudley Herschbach was cited for "providing a much more detailed understanding of how chemical reactions take place". Using molecular beams, he studied elementary reactions such as K + CH3I and K + Br2, where it became possible to correlate reaction dynamics with the electronic

  7. Physics with fast molecular-ion beams

    SciTech Connect (OSTI)

    Kanter, E.P.

    1980-01-01

    Fast (MeV) molecular-ion beams provide a unique source of energetic projectile nuclei which are correlated in space and time. The recognition of this property has prompted several recent investigations of various aspects of the interactions of these ions with matter. High-resolution measurements on the fragments resulting from these interactions have already yielded a wealth of new information on such diverse topics as plasma oscillations in solids and stereochemical structures of molecular ions as well as a variety of atomic collision phenomena. The general features of several such experiments will be discussed and recent results will be presented.

  8. Counting molecular-beam grown graphene layers

    SciTech Connect (OSTI)

    Plaut, Annette S.; Wurstbauer, Ulrich; Pinczuk, Aron; Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 ; Garcia, Jorge M.; Pfeiffer, Loren N.

    2013-06-17

    We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

  9. Yuan T. Lee and Molecular Beam Studies

    Office of Scientific and Technical Information (OSTI)

    Yuan T. Lee and Molecular Beam Studies Resources with Additional Information * Awards Yuan T. Lee Courtesy of the Michigan State University Chemistry Department Yuan Tseh Lee 'received the 1986 Nobel Prize in Chemistry, ... for elucidating the collision dynamics of elementary chemical reactions. During a postdoctoral appointment at Harvard with [Dudley R.] Herschbach, Lee designed and built a technologically advanced "universal" machine with electron bombardment ionizer and mass

  10. Structural and morphological evolution of gallium nitride nanorods grown by chemical beam epitaxy

    SciTech Connect (OSTI)

    Kuo, Shou-Yi; Lai, Fang-I; Chen, Wei-Chun; Hsiao, Chien-Nan; Lin, Woei-Tyng

    2009-07-15

    The morphological and structural evolution is presented for GaN nanorods grown by chemical beam epitaxy on (0001) Al{sub 2}O{sub 3} substrates. Their structural and optical properties are investigated by x-ray diffraction, scanning and transmission electron microscopy, and temperature-dependent photoluminescence measurements. While increasing the growth temperature and the flow rate of radio-frequency nitrogen radical, the three-dimensional growth mode will be enhanced to form one-dimensional nanostructures. The high density of well-aligned nanorods with a diameter of 30-50 nm formed uniformly over the entire sapphire substrate. The x-ray diffraction patterns and transmission electron microscopic images indicate that the self-assembled GaN nanorods are a pure single crystal and preferentially oriented in the c-axis direction. Particularly, the ''S-shape'' behavior with localization of {approx}10 meV observed in the temperature-dependent photoluminescence might be ascribed to the fluctuation in crystallographic defects and composition.

  11. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  12. Note: High density pulsed molecular beam for cold ion chemistry

    SciTech Connect (OSTI)

    Kokish, M. G.; Rajagopal, V.; Marler, J. P.; Odom, B. C.

    2014-08-15

    A recent expansion of cold and ultracold molecule applications has led to renewed focus on molecular species preparation under ultrahigh vacuum conditions. Meanwhile, molecular beams have been used to study gas phase chemical reactions for decades. In this paper, we describe an apparatus that uses pulsed molecular beam technology to achieve high local gas densities, leading to faster reaction rates with cold trapped ions. We characterize the beam's spatial profile using the trapped ions themselves. This apparatus could be used for preparation of molecular species by reactions requiring excitation of trapped ion precursors to states with short lifetimes or for obtaining a high reaction rate with minimal increase of background chamber pressure.

  13. Molecular beam surface analysis. 1993 Summary report

    SciTech Connect (OSTI)

    Appelhans, A.D.; Ingram, J.C.; Groenewold, G.S.; Dahl, D.A.; Delmore, J.E.

    1993-09-01

    The Molecular Beam Surface Analysis (MBSA) program is developing both laboratory-based and potentially field-portable chemical analyses systems taking advantage of new surface analysis technology developed at the Idaho National Engineering Laboratory (INEL). The objective is to develop the means to rapidly detect and identify, with high specificity and high sensitivity, nonvolatile and low volatile organics found in Chemical Weapons (CW) and High Explosives (HE) feedstocks, agents, and decomposition products on surfaces of plants, rocks, paint chips, filters, smears of buildings, vehicles, equipment, etc.. Ideally, the method would involve no sample preparation and no waste generation, and would have the potential for being implemented as a field-portable instrument. In contrast to existing analytical methods that rely on sample volatility, MBSA is optimized for nonvolatile and low volatile compounds. This makes it amenable for rapidly screening field samples for CW agent decomposition products and feedstock chemicals and perhaps actual agents. In its final configuration (benchtop size) it could be operated in a non-laboratory environment (such as an office building) requiring no sample preparation chemistry or chemical supplies. It could also be included in a mobile laboratory used in on-site, ore remote site cooperative surveys, or in a standard laboratory, where it would provide fast screening of samples at minimal cost.

  14. Molecular beam studies of reaction dynamics

    SciTech Connect (OSTI)

    Lee, Y.T.

    1993-12-01

    The major thrust of this research project is to elucidate detailed dynamics of simple elementary reactions that are theoretically important and to unravel the mechanism of complex chemical reactions or photochemical processes that play important roles in many macroscopic processes. Molecular beams of reactants are used to study individual reactive encounters between molecules or to monitor photodissociation events in a collision-free environment. Most of the information is derived from measurement of the product fragment energy, angular, and state distributions. Recent activities are centered on the mechanisms of elementary chemical reactions involving oxygen atoms with unsaturated hydrocarbons, the dynamics of endothermic substitution reactions, the dependence of the chemical reactivity of electronically excited atoms on the alignment of excited orbitals, the primary photochemical processes of polyatomic molecules, intramolecular energy transfer of chemically activated and locally excited molecules, the energetics of free radicals that are important to combustion processes, the infrared-absorption spectra of carbonium ions and hydrated hydronium ions, and bond-selective photodissociation through electric excitation.

  15. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOE Patents [OSTI]

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  16. Reactive Collisions in Crossed Molecular Beams

    DOE R&D Accomplishments [OSTI]

    Herschbach, D. R.

    1962-02-01

    The distribution of velocity vectors of reaction products is discussed with emphasis on the restrictions imposed by the conservation laws. The recoil velocity that carries the products away from the center of mass shows how the energy of reaction is divided between internal excitation and translation. Similarly, the angular distributions, as viewed from the center of mass, reflect the partitioning of the total angular momentum between angular momenta of individual molecules and orbital angular momentum associated with their relative motion. Crossed-beam studies of several reactions of the type M + RI yields R + MI are described, where M = K, Rb, Cs, and R = CH{sub 3}, C{sub 3}H{sub 5}, etc. The results show that most of the energy of reaction goes into internal excitation of the products and that the angular distribution is quite anisotropic, with most of the MI recoiling backward (and R forward) with respect to the incoming K beam. (auth)

  17. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    SciTech Connect (OSTI)

    Egorov, A. Yu. Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A.; Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G.

    2014-12-15

    Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

  18. High-power green and blue electron-beam pumped surface-emitting lasers using dielectric and epitaxial distributed Bragg reflectors

    SciTech Connect (OSTI)

    Klein, T.; Klembt, S.; Kozlovsky, V. I.; Zheng, A.; Tiberi, M. D.; Kruse, C.

    2015-03-21

    ZnSe-based electron-beam pumped vertical-cavity surface-emitting lasers for the green (λ = 530 nm) and blue (λ = 462 nm) spectral region have been realized. Structures with and without epitaxial bottom distributed Bragg reflector have been fabricated and characterized. The samples consist of an active region containing 20 quantum wells with a cavity length varying between an optical thickness of 10 λ to 20 λ. The active material is ZnCdSSe in case of the green devices and ZnSe for the blue ones. Room temperature single mode lasing for structures with and without epitaxial bottom mirror with a maximum output power up to 5.9 W (green) and 3.3 W (blue) is achieved, respectively.

  19. Atmospheric pressure plasma analysis by modulated molecular beam mass spectrometry

    SciTech Connect (OSTI)

    Aranda Gonzalvo, Y.; Whitmore, T.D.; Rees, J.A.; Seymour, D.L.; Stoffels, E.

    2006-05-15

    Fractional number density measurements for a rf plasma 'needle' operating at atmospheric pressure have been obtained using a molecular beam mass spectrometer (MBMS) system designed for diagnostics of atmospheric plasmas. The MBMS system comprises three differentially pumped stages and a mass/energy analyzer and includes an automated beam-to-background measurement facility in the form of a software-controlled chopper mechanism. The automation of the beam modulation allows the neutral components in the plasma to be rapidly and accurately measured using the mass spectrometer by threshold ionization techniques. Data are reported for plasma generated by a needle plasma source operated using a helium/air mixture. In particular, data for the conversion of atmospheric oxygen and nitrogen into nitric oxide are discussed with reference to its significance for medical applications such as disinfecting wounds and dental cavities and for microsurgery.

  20. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  1. Optical Probing of metamagnetic phases in epitaxial EuSe

    SciTech Connect (OSTI)

    Galgano, G. D.; Henriques, A. B.; Bauer, G.; Springholz, G.

    2011-12-23

    EuSe is a wide gap magnetic semiconductors with a potential for applications in proof-of-concept spintronic devices. When the temperature is lowered, EuSe goes through sharp transitions between a variety of magnetic phases and is thus described as metamagnetic. The purpose of the present investigation is to correlate the magnetic order to the sharp dichroic doublet, discovered recently in high quality thin epitaxial layers of EuSe, grown by molecular beam epitaxy. We report detailed measurements of the doublet positions and intensities as a function of magnetic field in low temperatures, covering several magnetic phases.

  2. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

    SciTech Connect (OSTI)

    Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A.; Grazianetti, C.; Fanciulli, M.; Dipartimento di Scienza dei Materiali, Universit degli Studi di Milano Bicocca, I-20126, Milano ; Chiappe, D.; Molle, A.

    2013-12-16

    Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

  3. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  4. Publisher's Note: ScGaN alloy growth by molecular beam epitaxy...

    Office of Scientific and Technical Information (OSTI)

    10.1103PhysRevB.70.239902; (c) 2004 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA) Country of Publication: United States Language: ...

  5. ScGaN alloy growth by molecular beam epitaxy: Evidence for a...

    Office of Scientific and Technical Information (OSTI)

    Authors: Constantin, Costel ; Al-Brithen, Hamad ; Haider, Muhammad B. ; Ingram, David ; Smith, Arthur R. 1 + Show Author Affiliations Condensed Matter and Surface Science ...

  6. Synthesis of Metal Oxide Nanomaterials for Chemical Sensors by Molecular Beam Epitaxy

    SciTech Connect (OSTI)

    Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai

    2013-12-01

    Since the industrial revolution, detection and monitoring of toxic matter, chemical wastes, and air pollutants has become an important environmental issue. Thus, it leads to the development of chemical sensors for various environmental applications. The recent disastrous oil spills over the near-surface of ocean due to the offshore drilling emphasize the use of chemical sensors for prevention and monitoring of the processes that might lead to these mishaps.1, 2 Chemical sensors operated on a simple principle that the sensing platform undergoes a detectable change when exposed to the target substance to be sensed. Among all the types of chemical sensors, solid state gas sensors have attracted a great deal of attention due to their advantages such as high sensitivity, greater selectivity, portability, high stability and low cost.3, 4 Especially, semiconducting metal oxides such as SnO2, TiO2, and WO3 have been widely used as the active sensing platforms in solid state gas sensors.5 For the enhanced properties of solid state gas sensors, finding new sensing materials or development of existing materials will be needed. Thus, nanostructured materials such as nanotubes,6-8 nanowires,9-11 nanorods,12-15 nanobelts,16, 17 and nano-scale thin films18-23 have been synthesized and studied for chemical sensing applications.

  7. Molecular beam-thermal hydrogen desorption from palladium

    SciTech Connect (OSTI)

    Lobo, R. F. M.; Berardo, F. M. V.; Ribeiro, J. H. F.

    2010-04-15

    Among the most efficient techniques for hydrogen desorption monitoring, thermal desorption mass spectrometry is a very sensitive one, but in certain cases can give rise to uptake misleading results due to residual hydrogen partial pressure background variations. In this work one develops a novel thermal desorption variant based on the effusive molecular beam technique that represents a significant improvement in the accurate determination of hydrogen mass absorbed on a solid sample. The enhancement in the signal-to-noise ratio for trace hydrogen is on the order of 20%, and no previous calibration with a chemical standard is required. The kinetic information obtained from the hydrogen desorption mass spectra (at a constant heating rate of 1 deg. C/min) accounts for the consistency of the technique.

  8. Martensite transformation of epitaxial Ni-Ti films

    SciTech Connect (OSTI)

    Buschbeck, J.; Kozhanov, A.; Kawasaki, J. K.; James, R. D.; Palmstroem, C. J.

    2011-05-09

    The structure and phase transformations of thin Ni-Ti shape memory alloy films grown by molecular beam epitaxy are investigated for compositions from 43 to 56 at. % Ti. Despite the substrate constraint, temperature dependent x-ray diffraction and resistivity measurements reveal reversible, martensitic phase transformations. The results suggest that these occur by an in-plane shear which does not disturb the lattice coherence at interfaces.

  9. Cerenkov emission induced by external beam radiation stimulates molecular fluorescence

    SciTech Connect (OSTI)

    Axelsson, Johan; Davis, Scott C.; Gladstone, David J.; Pogue, Brian W.

    2011-07-15

    Purpose: Cerenkov emission is induced when a charged particle moves faster than the speed of light in a given medium. Both x-ray photons and electrons produce optical Cerenkov photons in everyday radiation therapy of tissue; yet, this phenomenon has never been fully documented. This study quantifies the emissions and also demonstrates that the Cerenkov emission can excite a fluorophore, protoporphyrin IX (PpIX), embedded in biological phantoms. Methods: In this study, Cerenkov emission induced by radiation from a clinical linear accelerator is investigated. Biological mimicking phantoms were irradiated with x-ray photons, with energies of 6 or 18 MV, or electrons at energies 6, 9, 12, 15, or 18 MeV. The Cerenkov emission and the induced molecular fluorescence were detected by a camera or a spectrometer equipped with a fiber optic cable. Results: It is shown that both x-ray photons and electrons, at MeV energies, produce optical Cerenkov photons in tissue mimicking media. Furthermore, we demonstrate that the Cerenkov emission can excite a fluorophore, protoporphyrin IX (PpIX), embedded in biological phantoms. Conclusions: The results here indicate that molecular fluorescence monitoring during external beam radiotherapy is possible.

  10. Internal Energy Dependence of Molecular Condensation Coefficients Determined from Molecular Beam Surface Scattering Experiments

    DOE R&D Accomplishments [OSTI]

    Sibener, S. J.; Lee, Y. T.

    1978-05-01

    An experiment was performed which confirms the existence of an internal mode dependence of molecular sticking probabilities for collisions of molecules with a cold surface. The scattering of a velocity selected effusive beam of CCl{sub 4} from a 90 K CC1{sub 4} ice surface has been studied at five translational velocities and for two different internal temperatures. At a surface temperature of 90 K (approx. 99% sticking probability) a four fold increase in reflected intensity was observed for the internally excited (560 K) CC1{sub 4} relative to the room temperature (298 K) CC1{sub 4} at a translational velocity of 2.5 X 10{sup 4} cm/sec. For a surface temperature of 90 K all angular distributions were found to peak 15{sup 0} superspecularly independent of incident velocity.

  11. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al{sub 2}O{sub 3}(0001) substrates

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-05-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al{sub 2}O{sub 3}(0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively.

  12. Measurement of the density profile of pure and seeded molecular beams by femtosecond ion imaging

    SciTech Connect (OSTI)

    Meng, Congsen; Janssen, Maurice H. M.

    2015-02-15

    Here, we report on femtosecond ion imaging experiments to measure the density profile of a pulsed supersonic molecular beam. Ion images are measured for both a molecular beam and bulk gas under identical experimental conditions via femtosecond multiphoton ionization of Xe atoms. We report the density profile of the molecular beam, and the measured absolute density is compared with theoretical calculations of the centre line beam density. Subsequently, we discuss reasons accounting for the differences between measurements and calculations and propose that strong skimmer interference is the most probable cause for the differences. Furthermore, we report on experiments measuring the centre line density of seeded supersonic beams. The femtosecond ion images show that seeding the heavy Xe atom at low relative seed fractions (1%-10%) in a light carrier gas like Ne results in strong relative enhancements of up to two orders of magnitude.

  13. ALS, Molecular Foundry, and aBeam Technologies Collaborate to Make

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Metrology History ALS, Molecular Foundry, and aBeam Technologies Collaborate to Make Metrology History ALS, Molecular Foundry, and aBeam Technologies Collaborate to Make Metrology History Print Thursday, 21 January 2016 12:47 Through a collaboration with two Berkeley Lab user facilities as well as two other national labs, a small Bay Area company has made big news in the semiconductor world. Modern electronics are getting smaller and smaller, which means the demands on semiconductor

  14. Perpendicularly magnetized {tau}-MnAl (001) thin films epitaxied on GaAs

    SciTech Connect (OSTI)

    Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.

    2013-04-15

    Perpendicularly magnetized {tau}-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm{sup 3}, perpendicular magnetic anisotropy constant of 13.65 Merg/cm{sup 3}, and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets.

  15. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  16. Epitaxial Cr on n-SrTiO3(001)An ideal Ohmic contact

    SciTech Connect (OSTI)

    Capan, Cigdem; Sun, Guangyuan; Bowden, Mark E.; Chambers, Scott A.

    2012-01-30

    Epitaxial Cr metallizations grown on n-SrTiO3(001) by molecular beam epitaxy are shown to result in an ordered interface with Cr bound to O in the terminal TiO2 layer, no reduction of the SrTiO3, and a near-perfect Ohmic contact. Cr/n-SrTiO3(001) thus constitutes an ideal interface between a pure metal and wide gap oxide in which interface redox chemistry does not occur, and the Fermi level remains unpinned.

  17. Epitaxial Cr on n-SrTiO{sub 3}(001) - An ideal Ohmic contact

    SciTech Connect (OSTI)

    Capan, C.; Sun, G. Y.; Bowden, M. E.; Chambers, S. A.

    2012-01-30

    Epitaxial Cr metallizations grown on n-SrTiO{sub 3}(001) by molecular beam epitaxy are shown to result in an ordered interface with Cr bound to O in the terminal TiO{sub 2} layer, no reduction of the SrTiO{sub 3}, and a near-perfect Ohmic contact. Cr/n-SrTiO{sub 3}(001) thus constitutes an ideal interface between a pure metal and wide gap oxide in which interface redox chemistry does not occur, and the Fermi level remains unpinned.

  18. Molecular Beam Mass Spectrometry (MBMS) (Revised) (Fact Sheet), National Bioenergy Center Laboratory Capabilities (NBCLC), NREL (National Renewable Energy Laboratory)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beam Mass Spectrometry Enabling fundamental understanding of thermochemical biomass conversion and biomass composition recalcitrance NREL has six molecular beam mass spectrometers (MBMS): two stationary systems; two field-deployable systems, customized for use in industrial environments; and two additional high-throughput stationary systems with autosamplers. NREL's custom-built molecular beam mass spectrometers provide: * Rapid quantitation of reactive species in high temperature environments *

  19. Structural controlled magnetic anisotropy in Heusler L1{sub 0}-MnGa epitaxial thin films

    SciTech Connect (OSTI)

    Wang Kangkang; Lu Erdong; Smith, Arthur R.; Knepper, Jacob W.; Yang Fengyuan

    2011-04-18

    Ferromagnetic L1{sub 0}-MnGa thin films have been epitaxially grown on GaN, sapphire, and MgO substrates using molecular beam epitaxy. Using diffraction techniques, the epitaxial relationships are determined. It is found that the crystalline orientation of the films differ due to the influence of the substrate. By comparing the magnetic anisotropy to the structural properties, a clear correlation could be established indicating that the in-plane and out-of-plane anisotropy is directly determined by the crystal orientation of the film and could be controlled via selection of the substrates. This result could be helpful in tailoring magnetic anisotropy in thin films for spintronic applications.

  20. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  1. Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

    SciTech Connect (OSTI)

    Korpijaervi, V.-M.; Aho, A.; Tukiainen, A.; Laakso, A.; Guina, M.; Laukkanen, P.; Tuominen, M.

    2012-07-15

    GaInNAs has an important impact on developing GaAs-based optoelectronics and multijunction solar cells, but the complex nature of the nitrogen incorporation into GaInAs is still not fully understood. By combining x-ray diffraction, photoluminescence, reflection high-energy electron diffraction, and photoelectron spectroscopy measurements, we show that nitrogen incorporation is enhanced with increasing growth temperature in the range of 300-450 Degree-Sign C. We study the growth front and show that the surface reconstruction is (1 Multiplication-Sign 3) regardless of growth temperature in this range. The enhanced nitrogen incorporation can be modeled as a thermally activated process with activation energy of about 0.1 eV.

  2. Silicon sheet with molecular beam epitaxy for high efficiency solar cells. Final technical report, March 22, 1982-April 30, 1984

    SciTech Connect (OSTI)

    Not Available

    1984-01-01

    A two-year program has been carried out for the Jet Propulsion Laboratory in which the UCLA silicon MBE facility has been used to attempt to grow silicon solar cells of high efficiency. MBE ofers the potential of growing complex and arbitrary doping profiles with 10 A depth resolution. It is the only technique taht can readily grow built-in front and back surface fields of any desired depth and value in silicon solar cells, or the more complicated profiles needed for a double junction cascade cell, all in silicon, connected in series by a tunnel junction. Although the dopant control required for such structures has been demonstrated in silicon by UCLA, crystal quality at the p-n junctions is still too poor to allow the other advantages to be exploited. Results from other laboratories indicate that this problem will soon be overcome. A computer analysis of the double cascade all in silicon shows that efficiencies can be raised over that of any single silicon cell by 1 or 2%, and that open circuit voltage of almost twice that of a single cell should be possible.

  3. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    SciTech Connect (OSTI)

    Sedova, I. V. Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-11-15

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is {delta}a/a {approx} 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 {+-} 1.5 nm). In the photoluminescence spectra, a noticeable ({approx}150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs.

  4. Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

    SciTech Connect (OSTI)

    Haegel, N. M.; Christian, T.; Norman, A. G.; Mascarenhas, A.; Scandrett, C.; Misra, Pranob; Liu, Ting; Sukiasyan, Arsen; Pickett, Evan; Yuen, Homan

    2014-11-17

    Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300?K vary from ?2000 to 400?cm{sup 2}/V?s and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the [110] direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.

  5. Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Connie, Ashfiqua Tahseen; Zhao, Songrui; Sadaf, Sharif Md.; Shih, Ishiang; Mi, Zetian; Du, Xiaozhang; Lin, Jingyu; Jiang, Hongxing

    2015-05-25

    In this paper, the optical and electrical properties of Mg-doped AlN nanowires are discussed. At room temperature, with the increase of Mg-doping concentration, the Mg-acceptor energy level related optical transition can be clearly measured, which is separated about 0.6?eV from the band-edge transition, consistent with the Mg activation energy in AlN. The electrical conduction measurements indicate an activation energy of 23?meV at 300?K450?K temperature range, which is significantly smaller than the Mg-ionization energy in AlN, suggesting the p-type conduction being mostly related to hopping conduction. The free hole concentration of AlN:Mg nanowires is estimated to be on the order of 10{sup 16?}cm{sup ?3}, or higher.

  6. Ultrafast transient reflectance of epitaxial semiconducting perovskite thin films

    SciTech Connect (OSTI)

    Smolin, S. Y.; Guglietta, G. W.; Baxter, J. B. E-mail: smay@coe.drexel.edu; Scafetta, M. D.; May, S. J. E-mail: smay@coe.drexel.edu

    2014-07-14

    Ultrafast pump-probe transient reflectance (TR) spectroscopy was used to study carrier dynamics in an epitaxial perovskite oxide thin film of LaFeO{sub 3} (LFO) with a thickness of 40 unit cells (16?nm) grown by molecular beam epitaxy on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT). TR spectroscopy shows two negative transients in reflectance with local maxima at ?2.5?eV and ?3.5?eV which correspond to two optical transitions in LFO as determined by ellipsometry. The kinetics at these transients were best fit with an exponential decay model with fast (540 ps), medium (?200 ps), and slow (??3?ns) components that we attribute mainly to recombination of photoexcited carriers. Moreover, these reflectance transients did not completely decay within the observable time window, indicating that ?10% of photoexcited carriers exist for at least 3?ns. This work illustrates that TR spectroscopy can be performed on thin (<20?nm) epitaxial oxide films to provide a quantitative understanding of recombination lifetimes, which are important parameters for the potential utilization of perovskite films in photovoltaic and photocatalytic applications.

  7. ALS, Molecular Foundry, and aBeam Technologies Collaborate to Make

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Metrology History ALS, Molecular Foundry, and aBeam Technologies Collaborate to Make Metrology History Print Through a collaboration with two Berkeley Lab user facilities as well as two other national labs, a small Bay Area company has made big news in the semiconductor world. Modern electronics are getting smaller and smaller, which means the demands on semiconductor manufacturers are increasing. To ensure the quality and consistency of substrates, wafer manufacturers employ metrology tools

  8. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    SciTech Connect (OSTI)

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  9. Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

    SciTech Connect (OSTI)

    Wang, Shouguo; Ward, R. C. C.; Zhang, Xiaoguang; Kohn, A.; Ma, Q. L.; Zhang, J.; Liu, H. F.; Han, Prof. X. F.

    2012-01-01

    Following predictions by first-principles theory of huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), measured magnetoresistance (MR) ratio about 200% at room temperature (RT) have been reported in MgO-based epitaxial MTJs. Recently, MR ratio of about 600% has been reported at RT in MgO-based amorphous MTJs with core structure of CoFeB/MgO/CoFeB grown by magnetron sputtering with amorphous CoFeB layers. The sputtered CoFeB/MgO/CoFeB MTJs shows a great potential application in spintronic devices. Although epitaxial structure will probably not be used in devices, it remains an excellent model system to compare theoretical calculations with experimental results and to enhance our understanding of the spin dependent tunneling. Both theoretical calculations and experimental results clearly indicate that the interfacial structure plays a crucial role on coherent tunneling across single crystalMgO barrier, especially in epitaxial MgO-based MTJs grown by molecular beam epitaxy (MBE). Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism have been used for interface characterization. However, no consistent viewpoint has been reached, and this is still an open issue. In this article, recent studies on the interface characterization in MgO-based epitaxial MTJs will be introduced, with a focus on research by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and spin dependent tunneling spectroscopy.

  10. Molecular beam mass spectrometry with tunable vacuum ultraviolet (VUV) synchrotron radiation

    SciTech Connect (OSTI)

    Golan, Amir; Ahmed, Musahid

    2012-01-01

    Tunable soft ionization coupled to mass spectroscopy is a powerful method to investigate isolated molecules, complexes and clusters and their spectroscopy and dynamics.[1-4] Fundamental studies of photoionization processes of biomolecules provide information about electronic structure of these systems. Furthermore determinations of ionization energies and other properties of biomolecules in the gas phase are not trivial, and these experiments provide a platform to generate these data. We have developed a thermal vaporization technique coupled with supersonic molecular beams that provides a gentle way to transport these species into the gas phase. Judicious combination of source gas and temperature allows for formation of dimers and higher clusters of the DNA bases. The focus of this particular work is on the effects of non-covalent interactions, i.e., hydrogen bonding, stacking, and electrostatic interactions, on the ionization energies and proton transfer of individual biomolecules, their complexes and upon micro-hydration by water.[1, 5-9] We have performed experimental and theoretical characterization of the photoionization dynamics of gas-phase uracil and 1,3-methyluracil dimers using molecular beams coupled with synchrotron radiation at the Chemical Dynamics Beamline[10] located at the Advanced Light Source and the experimental details are visualized here. This allowed us to observe the proton transfer in 1,3-dimethyluracil dimers, a system with pi stacking geometry and with no hydrogen bonds[1]. Molecular beams provide a very convenient and efficient way to isolate the sample of interest from environmental perturbations which in return allows accurate comparison with electronic structure calculations[11, 12]. By tuning the photon energy from the synchrotron, a photoionization efficiency (PIE) curve can be plotted which informs us about the cationic electronic states. These values can then be compared to theoretical models and calculations and in turn, explain in detail the electronic structure and dynamics of the investigated species [1, 3].

  11. Reaction Mechanism of Oxygen Atoms with Unsaturated Hydrocarbons by the Crossed-Molecular-Beams Method

    DOE R&D Accomplishments [OSTI]

    Buss, R. J.; Baseman, R. J.; Guozhong, H.; Lee, Y. T.

    1982-04-01

    From a series of studies of the reaction of oxygen atoms with unsaturated hydrocarbons using the crossed molecular beam method, the dominant reaction mechanisms were found to be the simple substitution reactions with oxygen atoms replacing H, Cl, Br atom or alkyl groups. Complication due to secondary reaction was avoided by carrying out experiments under single collisions and observing primary products directly. Primary products were identified by measuring the angular and velocity distributions of products at all the mass numbers which could be detected by the mass spectrometer, and from comparison of these distributions, applying the requirement of energy and momentum conservation.

  12. A laser and molecular beam mass spectrometer study of low-pressure dimethyl ether flames

    SciTech Connect (OSTI)

    Andrew McIlroy; Toby D. Hain; Hope A. Michelsen; Terrill A. Cool

    2000-12-15

    The oxidation of dimethyl ether (DME) is studied in low-pressure flames using new molecular beam mass spectrometer and laser diagnostics. Two 30.0-Torr, premixed DME/oxygen/argon flames are investigated with stoichiometries of 0.98 and 1.20. The height above burner profiles of nine stable species and two radicals are measured. These results are compared to the detailed chemical reaction mechanism of Curran and coworkers. Generally good agreement is found between the model and data. The largest discrepancies are found for the methyl radical profiles where the model predicts qualitatively different trends in the methyl concentration with stoichiometry than observed in the experiment.

  13. Electronic and magnetic properties of epitaxial perovskite SrCrO3(001)

    SciTech Connect (OSTI)

    Zhang, Hongliang; Du, Yingge; Sushko, Petr; Bowden, Mark E.; Shutthanandan, V.; Qiao, Liang; Cao, Guixin; Gai, Zheng; Sallis, Shawn; Piper, L.F.J.; Chambers, Scott A.

    2015-06-24

    We have investigated the intrinsic properties of SrCrO3 epitaxial thin films synthesized by molecular beam epitaxy. We find compelling evidence that SrCrO3 is a correlated metal. X-ray photoemission valence band and O K-edge x-ray absorption spectra indicate a strongly hybridized Cr3d-O2p state crossing the Fermi level, leading to metallic behavior. Comparison between valence band spectra near the Fermi level and the densities of states calculated using density functional theory (DFT) also suggests the presence of coherent and incoherent states and points to a strong electron-electron correlation effects. The magnetic susceptibility can be described by Pauli paramagnetism at temperatures above 100 K, but reveals antiferromagnetic behavior at lower temperatures resulting from orbital ordering as suggested by Ortega-San-Martin et al. [Phys. Rev. Lett. 99, 255701 (2007)].

  14. Extrinsic anomalous Hall effect in epitaxial Mn{sub 4}N films

    SciTech Connect (OSTI)

    Meng, M.; Wu, S. X. Ren, L. Z.; Zhou, W. Q.; Wang, Y. J.; Wang, G. L.; Li, S. W.

    2015-01-19

    Anomalous Hall effect (AHE) in ferrimagnetic Mn{sub 4}N epitaxial films grown by molecular-beam epitaxy is investigated. The longitudinal conductivity σ{sub xx} is within the superclean regime, indicating Mn{sub 4}N is a highly conducting material. We further demonstrate that the AHE signal in 40-nm-thick films is mainly due to the extrinsic contributions based on the analysis fitted by ρ{sub AH}=a′ρ{sub xx0}+bρ{sub xx}{sup 2} and σ{sub AH}∝σ{sub xx}. Our study not only provide a strategy for further theoretical work on antiperovskite manganese nitrides but also shed promising light on utilizing their extrinsic AHE to fabricate spintronic devices.

  15. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  16. Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo{sub 5}(0001) epitaxial thin films

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    SmCo{sub 5}(0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al{sub 2}O{sub 3}(0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo{sub 5}(0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo{sub 5} film and substitute the Co sites in SmCo{sub 5} structure forming an alloy compound of Sm(Co,Cu){sub 5}. The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo{sub 5} film is assisting the formation of Sm(Co,Cu){sub 5} ordered phase.

  17. Growth and transport properties of epitaxial lattice matched half Heusler CoTiSb/InAlAs/InP(001) heterostructures

    SciTech Connect (OSTI)

    Kawasaki, Jason K.; Johansson, Linda I. M.; Schultz, Brian D.; Palmstrm, Chris J.

    2014-01-13

    We demonstrate the integration of the lattice matched single crystal epitaxial Half Heusler compound CoTiSb with In{sub 0.52}Al{sub 0.48}As/InP(001) heterostructures using molecular beam epitaxy. CoTiSb belongs to the subset of Half Heusler compounds that is expected to be semiconducting, despite being composed entirely of metallic constituents. The lattice matching and epitaxial alignment of the CoTiSb films were confirmed by reflection high energy electron diffraction and X-ray diffraction. Temperature dependent transport measurements indicate semiconducting-like behavior, with a room temperature Hall mobility of 530 cm{sup 2}/Vs and background Hall carrier density of 9.0??10{sup 17}?cm{sup ?3}, which is comparable to n-Si with similar carrier density. Below 100?K, the films show a large negative magnetoresistance, and possible origins of this negative magnetoresistance are discussed.

  18. Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process

    DOE Patents [OSTI]

    McKee, Rodney A.; Walker, Frederick J.

    1996-01-01

    A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.

  19. Adsorption of iso-/n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study

    SciTech Connect (OSTI)

    Goering, J.; Kadossov, E.; Burghaus, Uwe; Yu, Zhongqing; Thevuthasan, Suntharampillai; Saraf, Laxmikant V.

    2007-07-01

    Binding energies and adsorption probabilities have been determined for n/iso-butane adsorption on an anatase thin film grown on SrTiO3(001) by means of thermal desorption spectroscopy (TDS) and molecular beam scattering. The sample has been characterized by x-ray diffraction (XRD) and Auger electrons spectroscopy (AES).

  20. Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

    SciTech Connect (OSTI)

    Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-04-01

    FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe{sub 50}Co{sub 50} alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal.

  1. INFRARED VIBRATIONAL PREDISSOCIATION SPECTROSCOPY OF WATER CLUSTERS BY THE CROSSED LASER MOLECULAR BEAM TECHNIQUE

    SciTech Connect (OSTI)

    Vernon, M.F.; Krajnovich, D.J.; Kwok, H.S.; Lisy, J.M.; Shen, Y.R.; Lee, Y.T.

    1981-11-01

    Water clusters formed in a molecular beam are predissociated by tunable, pulsed, infrared radiation in the frequency range 2900~3750 cm{sup -1}. The recoiling fragments are detected off axis from the molecular beam using a rotatable mass spectrometer. Arguments are presented which show that the measured frequency dependent signal at a fixed detector angle is proportional to the absorption spectrum of the clusters. It is found that the spectra of clusters containing three or more water molecules are remarkably similar to the liquid phase spectrum. Dynamical information on the predissociation process is obtained from the velocity distribution of the fragments. An upper limit to the excited vibrational state lifetime of ~1 microsecond is observed for the results reported here. The most probable dissociation process concentrates the available excess energy into the internal motions of the fragment molecules. Both the time scale and translational energy distribution are consistent with the qualitative predictions of current theoretical models for cluster predissociation. From adiabatic dissociation trajectories and Monte Carlo simulations it is seen that the strong coupling present in the water polymers probably invalidates the simpler "diatomic" picture formulations of cluster predissociation. Instead, the energy can be extensively shared among the intermolecular motions in the polymer before dissociation. Comparison between current intermolecular potentials describing liquid water and the observed frequencies is made in the normal mode approximation. The inability of any potential to predict the gross spectral features (the number of bands and their observed frequency shift from the gas phase monomer) suggests that substantial improvement in the potential energy functions are possible, but that more accurate methods of solving the vibrational wave equation are necessary before a proper explanation of the spectral fine structure is possible. The observed differences between the dimer and larger polymers (trimer-hexamer) indicate a dramatic change in the hydrogen bonding, which is best explained as arising from the non-additive effects present when a water molecule is both donating and accepting a hydrogen bond. This difference between dimer and trimer also rationalizes the previous disagreement between potential functions based on condensed phase properties (where the water molecule is interacting with multiple neighbors) and those fit to imperfect gas or dimer properties which sample only the isolated pair potential. The data support an interpretation of the hydrogen bonded O-H stretching fundamental region as arising from a homogeneous broadening (not necessarily a result of the predissociation) whose width is characteristic of the hydrogen bond itself and not the sum of distinct bonding geometries. This is different from some previous theories of the water infrared absorption spectrum which assign each band to water molecules bound to different numbers of neighboring molecules.

  2. Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn{sub 4}N epitaxial thin film

    SciTech Connect (OSTI)

    Shen, Xi; Shigematsu, Kei; Chikamatsu, Akira Fukumura, Tomoteru; Hirose, Yasushi; Hasegawa, Tetsuya

    2014-08-18

    We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16?MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125??? cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

  3. Optical absorption in epitaxial La{sub 1-x}Sr{sub x}FeO{sub 3} thin films

    SciTech Connect (OSTI)

    Scafetta, M D.; Xie, Y. J.; Torres, M.; Spanier, J. E.; May, S. J.

    2013-02-25

    We report the dependence of optical absorption on Sr concentration in La{sub 1-x}Sr{sub x}FeO{sub 3} (LSFO) (x{<=}0.4) perovskite thin films. Strained epitaxial films were deposited on SrTiO{sub 3} substrates using oxide molecular beam epitaxy. We find systematic changes in the optical absorption spectra with increasing x including a red-shift of transition energies and the increasing presence of a lower energy transition within the fundamental gap of pure LaFeO{sub 3}. These results serve as a demonstration of the complex manner in which absorption spectra can be altered in complex oxides via heterovalent A-site substitution.

  4. Electronic phase diagram of epitaxial La{sub 1?x}Sr{sub x}FeO{sub 3} films

    SciTech Connect (OSTI)

    Xie, Y. J.; Scafetta, M. D.; Moon, E. J.; Krick, A. L.; Sichel-Tissot, R. J.; May, S. J.

    2014-08-11

    The electronic phase diagram of epitaxial La{sub 1?x}Sr{sub x}FeO{sub 3} films is presented. The films were grown on SrTiO{sub 3} using molecular beam epitaxy with post-growth annealing to minimize oxygen vacancies. Insulating behavior is observed from x?=?00.9, with metallic conduction only present for x?=?1.0. While the La-rich compounds exhibit polaron conduction over all temperatures measured, the Sr-rich films exhibit an electronic phase transition within the compositional window of x?=?0.490.9 as revealed by temperature-dependent resistivity measurements. The transition temperatures are found to decrease with increasing Sr content. The constructed phase diagram is discussed in the context of other 3d e{sub g} perovskite systems including manganites and cobaltites.

  5. Epitaxial strengthening of crystals

    DOE Patents [OSTI]

    Morris, Robert C.; Marion, II, John E.; Gaultieri, Devlin M.

    1988-01-01

    An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.

  6. Rapid characterization of lignocellulosic feedstocks for fuels and chemicals: Molecular beam mass spectrometric approach

    SciTech Connect (OSTI)

    Agblevor, F.A.; Davis, M.F. [National Renewable Energy Lab., Golden, CO (United States)

    1996-12-31

    Rapid characterization of biomass feedstocks has a pivotal role in the development of biomass energy because of the large number of samples that must be analyzed due to the diversity of biomass feedstocks and the significant differences in the chemical and physical properties of these feedstocks. Several biomass feedstocks (herbaceous, woody, and agricultural residues) were screened for the effects of storage, season of harvest, geographic location, clonal, and species variation on the pyrolysis products of the feed stocks. For herbaceous species such as sericea lespedeza, the season of harvest had a significant effect on the pyrolysis products. Effects of clonal variation on the composition of hybrid poplar feedstocks was easily discerned with the molecular beam mass spectrometric analysis. The effect of geographic location on the poplar clones pyrolysis products was minimal. However in the case of switchgrass, varietal influence on the pyrolysis products was minimal, but where the plant was grown had a strong influence on the pyrolysis products of the feedstock. Significant differences because of species variation could also be shown from the pyrolysis products of various biomass feedstocks. The influence of storage time on biomass samples stored outside in the open could also be discerned from the pyrolysis products of the feedstocks. The differences noted in the pyrolysis products of the feedstocks were noted for samples which were significantly degraded during storage either through the action of microflora or weathering.

  7. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    SciTech Connect (OSTI)

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; Li, H. D.; Feng, H.; Sun, W. G.

    2015-01-15

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density, heat and momentum transport equations along with neutral density, and momentum transport equations. Transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. It is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.

  8. Note: A short-pulse high-intensity molecular beam valve based on a piezoelectric stack actuator

    SciTech Connect (OSTI)

    Abeysekera, Chamara; Joalland, Baptiste; Shi, Yuanyuan; Kamasah, Alexander; Oldham, James M.; Suits, Arthur G.

    2014-11-15

    Solenoid and piezoelectric disk valves, which are widely used to generate molecular beam pulses, still suffer from significant restrictions, such as pulse durations typically >50 μs, low repetition rates, and limited gas flows and operational times. Much of this arises owing to the limited forces these actuators can achieve. To overcome these limitations, we have developed a new pulsed valve based on a high-force piezoelectric stack actuator. We show here that operation with pulse durations as low as 20 μs and repetition rates up to 100 Hz can be easily achieved by operating the valve in conjunction with a commercial fast high-voltage switch. We outline our design and demonstrate its performance with molecular beam characterization via velocity map ion imaging.

  9. Impact of Lattice Mismatch and Stoichiometry on the Structure and Bandgap of (Fe,Cr)2O3 Epitaxial Thin Films

    SciTech Connect (OSTI)

    Kaspar, Tiffany C.; Chamberlin, Sara E.; Bowden, Mark E.; Colby, Robert J.; Shutthanandan, V.; Manandhar, Sandeep; Wang, Yong; Sushko, Petr; Chambers, Scott A.

    2014-03-13

    The structural properties of high-quality epitaxial (Fe1-xCrx)2O3 thin films are investigated across the composition range. Epitaxial films are deposited on a-Al2O3(0001) substrates by oxygen-plasma-assisted molecular beam epitaxy. Corundum (Fe1-xCrx)2O3 supercells relaxed by density functional theory confirm that the non-linear behavior of the bulk lattice parameters originates in the magnetic structure of the alloy films. High-resolution x-ray diffraction reveals the degree of epitaxial strain relaxation in the films, with Cr-rich films remaining partially strained to the Al2O3 substrate. For intermediate compositions, a lattice expansion and non-Poisson-like tetragonal distortion are found. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal a columnar grain structure in the films, with uniform mixing of cations on the nanometer scale. Oxygen non-stoichiometry is quantified by non-Rutherford resonant elastic scattering measurements utilizing 3.04 MeV He+. Intermediate-composition films are found to be slightly over-stoichiometric, resulting in the observed lattice expansion. Cr-rich films, in contrast, appear to be slightly oxygen deficient. A model is proposed to explain these results based on the energetics of oxygen defect formation and rate of oxygen diffusion in the corundum lattice. Compressive biaxial strain is found to reduce the bandgap of epitaxial Cr2O3 relative to the bulk value. The relationships which are elucidated between epitaxial film structure and optical properties can be applied to bandgap optimization in the (Fe,Cr)2O3 system.

  10. Epitaxial thin films

    DOE Patents [OSTI]

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  11. Molecular beam mass spectrometer equipped with a catalytic wall reactor for in situ studies in high temperature catalysis research

    SciTech Connect (OSTI)

    Horn, R.; Ihmann, K.; Ihmann, J.; Jentoft, F.C.; Geske, M.; Taha, A.; Pelzer, K.; Schloegl, R.

    2006-05-15

    A newly developed apparatus combining a molecular beam mass spectrometer and a catalytic wall reactor is described. The setup has been developed for in situ studies of high temperature catalytic reactions (>1000 deg. C), which involve besides surface reactions also gas phase reactions in their mechanism. The goal is to identify gas phase radicals by threshold ionization. A tubular reactor, made from the catalytic material, is positioned in a vacuum chamber. Expansion of the gas through a 100 {mu}m sampling orifice in the reactor wall into differentially pumped nozzle, skimmer, and collimator chambers leads to the formation of a molecular beam. A quadrupole mass spectrometer with electron impact ion source designed for molecular beam inlet and threshold ionization measurements is used as the analyzer. The sampling time from nozzle to detector is estimated to be less than 10 ms. A detection time resolution of up to 20 ms can be reached. The temperature of the reactor is measured by pyrometry. Besides a detailed description of the setup components and the physical background of the method, this article presents measurements showing the performance of the apparatus. After deriving the shape and width of the energy spread of the ionizing electrons from measurements on N{sub 2} and He we estimated the detection limit in threshold ionization measurements using binary mixtures of CO in N{sub 2} to be in the range of several hundreds of ppm. Mass spectra and threshold ionization measurements recorded during catalytic partial oxidation of methane at 1250 deg. C on a Pt catalyst are presented. The detection of CH{sub 3}{center_dot} radicals is successfully demonstrated.

  12. Structural perturbations of epitaxial ?-(Fe1-xVx)2O3 thin films driven by excess oxygen near the surface

    SciTech Connect (OSTI)

    Chamberlin, Sara E.; Kaspar, Tiffany C.; Bowden, Mark E.; Shutthanandan, V.; Kabius, Bernd C.; Heald, Steve M.; Keavney, David; Chambers, Scott A.

    2014-12-21

    We examine the structure and composition of phase-pure epitaxial ?-(Fe1-xVx)2O3 thin films deposited on ?-Al2O3(0001) substrates by oxygen-plasma-assisted molecular beam epitaxy for 0 ? x ? ~0.5. The films crystallize in the corundum lattice, with vanadium substituting for iron throughout. Vanadium cations exhibit the expected 3+ charge state in the bulk, but exhibit higher valences nearer to the surface, most likely because of excess oxygen in interstitial sites near the surface. The extent of vanadium oxidation beyond the 3+ state is inversely proportional to x. The gradation of vanadium valence with depth may have an impact on local bonding geometries, and could be highly significant in this materials efficiency as a photocatalyst.

  13. Element-specific study of epitaxial NiO/Ag/CoO/Fe films grown on vicinal Ag(001) using photoemission electron microscopy

    SciTech Connect (OSTI)

    Meng, Y.; Li, J.; Tan, A.; Jin, E.; Son, J.; Park, J. S.; Doran, A.; Young, A. T.; Scholl, A.; Arenholz, E.; Wu, J.; Hwang, C.; Zhao, H. W.; Qiu, Z. Q.

    2011-01-10

    NiO/Ag/CoO/Fe single crystalline films are grown epitaxially on a vicinal Ag(001) substrate using molecular beam epitaxy and investigated by photoemission electron microscopy. We find that after zero-field cooling, the in-plane Fe magnetization switches from parallel to perpendicular direction of the atomic steps of the vicinal surface at thinner CoO thickness but remains in its original direction parallel to the steps at thicker CoO thickness. CoO and NiO domain imaging result shows that both CoO/Fe and NiO/CoO spins are perpendicularly coupled, suggesting that the Fe magnetization switching may be associated with the rotatable-frozen spin transition of the CoO film.

  14. Preparation and structural characterization of FeCo epitaxial thin films on insulating single-crystal substrates

    SciTech Connect (OSTI)

    Nishiyama, Tsutomu; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    FeCo epitaxial films were prepared on MgO(111), SrTiO{sub 3}(111), and Al{sub 2}O{sub 3}(0001) single-crystal substrates by ultrahigh vacuum molecular beam epitaxy. The effects of insulating substrate material on the film growth process and the structures were investigated. FeCo(110){sub bcc} films grow on MgO substrates with two type domains, Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS) relationships. On the contrary, FeCo films grown on SrTiO{sub 3} and Al{sub 2}O{sub 3} substrates include FeCo(111){sub bcc} crystal in addition to the FeCo(110){sub bcc} crystals with NW and KS relationships. The FeCo(111){sub bcc} crystal consists of two type domains whose orientations are rotated around the film normal by 180 deg. each other. The out-of-plane and the in-plane lattice spacings of FeCo(110){sub bcc} and FeCo(111){sub bcc} crystals formed on the insulating substrates are in agreement with those of the bulk Fe{sub 50}Co{sub 50} (at. %) crystal with small errors ranging between +0.2% and +0.4%, showing that the strains in the epitaxial films are very small.

  15. Robust surface electronic properties of topological insulators: Bi{sub 2}Te{sub 3} films grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Plucinski, L.; Herdt, A.; Mussler, G.; Krumrain, J.; Gruetzmacher, D.; Suga, S.; Schneider, C. M.

    2011-05-30

    The surface electronic properties of the important topological insulator Bi{sub 2}Te{sub 3} are shown to be robust under an extended surface preparation procedure, which includes exposure to atmosphere and subsequent cleaning and recrystallization by an optimized in situ sputter-anneal procedure under ultrahigh vacuum conditions. Clear Dirac-cone features are displayed in high-resolution angle-resolved photoemission spectra from the resulting samples, indicating remarkable insensitivity of the topological surface state to cleaning-induced surface roughness.

  16. Highly resistive epitaxial Mg-doped GdN thin films

    SciTech Connect (OSTI)

    Lee, C.-M.; Warring, H.; Trodahl, H. J.; Ruck, B. J.; Natali, F.; Vézian, S.; Damilano, B.; Cordier, Y.; Granville, S.; Al Khalfioui, M.

    2015-01-12

    We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 10{sup 3} Ω cm and carrier concentrations of 10{sup 16 }cm{sup −3} are obtained for films with Mg concentrations up to 5 × 10{sup 19} atoms/cm{sup 3}. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali, B. J. Ruck, H. J. Trodahl, D. L. Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond, and C. Meyer, Phys. Rev. B 87, 035202 (2013)].

  17. Electrical transport properties of Ti-doped Fe2O3(0001) epitaxial films

    SciTech Connect (OSTI)

    Zhao, Bo; Kaspar, Tiffany C.; Droubay, Timothy C.; McCloy, John S.; Bowden, Mark E.; Shutthanandan, V.; Heald, Steve M.; Chambers, Scott A.

    2011-12-30

    The electrical transport properties for compositionally and structurally well-defined epitaxial ?-(TixFe1?x)2O3(0001) films have been investigated for x ? 0.09. All films were grown by oxygen plasma-assisted molecular beam epitaxy using two different growth rates: 0.050.06 /s and 0.220.24 /s. Despite no detectable difference in cation valence and structural properties, films grown at the lower rate were highly resistive whereas those grown at the higher rate were semiconducting (? = ?1 ???cm at 25?C). Hall effect measurements reveal carrier concentrations between 1019 and 1020 cm?3 at room temperature and mobilities in the range of 0.1 to 0.6 cm2/V??s for films grown at the higher rate. The conduction mechanism transitions from small-polaron hopping at higher temperatures to variable-range hopping at a transition temperature between 180 and 140 K. The absence of conductivity in the slow-grown films is attributed to donor electron compensation by cation vacancies, which may form to a greater extent at the lower rate because of higher oxygen fugacity at the growth front.

  18. Big-Data RHEED analysis for understanding epitaxial film growth processes

    SciTech Connect (OSTI)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2014-10-28

    Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in-situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED image, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the dataset are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of RHEED image sequence. This approach is illustrated for growth of LaxCa1-xMnO3 films grown on etched (001) SrTiO3 substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the assymetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

  19. Structural perturbations of epitaxial ?-(Fe{sub 1?x}V{sub x}){sub 2}O{sub 3} thin films driven by excess oxygen near the surface

    SciTech Connect (OSTI)

    Chamberlin, S. E.; Kaspar, T. C.; Chambers, S. A.; Bowden, M. E.; Shutthanandan, V.; Kabius, B.; Heald, S.; Keavney, D. J.

    2014-12-21

    We examine the structure and composition of phase-pure epitaxial ?-(Fe{sub 1?x}V{sub x}){sub 2}O{sub 3} thin films deposited on ?-Al{sub 2}O{sub 3}(0001) substrates by oxygen-plasma-assisted molecular beam epitaxy for 0???x????0.5. The films crystallize in the corundum lattice, with vanadium substituting for iron throughout. Vanadium cations exhibit the expected 3+ charge state in the bulk, but exhibit higher valences nearer to the surface, most likely because of excess oxygen in interstitial sites near the surface. The extent of vanadium oxidation beyond the 3+ state is inversely proportional to x. The gradation of vanadium valence with depth has an impact on local bonding geometries, and could be highly significant in this material's efficiency as a photocatalyst.

  20. Effusive molecular beam-sampled Knudsen flow reactor coupled to vacuum ultraviolet single photon ionization mass spectrometry using an external free radical source

    SciTech Connect (OSTI)

    Leplat, N.; Rossi, M. J.

    2013-11-15

    A new apparatus using vacuum ultraviolet single photon ionization mass spectrometry (VUV SPIMS) of an effusive molecular beam emanating from a Knudsen flow reactor is described. It was designed to study free radical-molecule kinetics over a significant temperature range (300630 K). Its salient features are: (1) external free radical source, (2) counterpropagating molecular beam and diffuse VUV photon beam meeting in a crossed-beam ion source of a quadrupole mass spectrometer with perpendicular ion extraction, (3) analog detection of the photocurrent of the free radical molecular cation, and (4) possibility of detecting both free radicals and closed shell species in the same apparatus and under identical reaction conditions owing to the presence of photoelectrons generated by the photoelectric effect of the used VUV-photons. The measured thermal molecular beam-to-background ratio was 6.35 0.39 for Ar and 10.86 1.59 for i-C{sub 4}H{sub 10} at 300 K, a factor of 2.52 and 1.50 smaller, respectively, than predicted from basic gas-dynamic considerations. Operating parameters as well as the performance of key elements of the instrument are presented and discussed. Coupled to an external free radical source a steady-state specific exit flow of 1.6 10{sup 11} and 5.0 10{sup 11} molecule s{sup ?1} cm{sup ?3} of C{sub 2}H{sub 5}{sup } (ethyl) and t-C{sub 4}H{sub 9}{sup } (t-butyl) free radicals have been detected using VUV SPIMS at their molecular ion m/z 29 and 57, respectively, at 300 K.

  1. Structural consequences of hydrogen intercalation of epitaxial...

    Office of Scientific and Technical Information (OSTI)

    of epitaxial graphene on SiC(0001) Citation Details In-Document Search Title: Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001) Authors: ...

  2. Hole-induced insulator-to-metal transition in La1-xSrxCrO3 epitaxial films

    SciTech Connect (OSTI)

    Zhang, Hongliang; Du, Yingge; Sushko, Petr; Bowden, Mark E.; Shutthanandan, V.; Sallis, Shawn; Piper, Louis F. J.; Chambers, Scott A.

    2015-04-01

    We have investigated the evolution of the structural and electronic properties of La1-xSrxCrO3 (0 ? x ? 1) epitaxial films deposited by molecular beam epitaxy (MBE) using x-ray diffraction, x-ray photoemission spectroscopy, x-ray absorption spectroscopy, electrical transport, and ab initio modeling. LaCrO3 is an antiferromagnetic Mott insulator whereas stoichiometric SrCrO3 is a metal. Substituting Sr2+ for La3+ in LaCrO3 effectively dopes holes into the top of valence band, leading to Cr4+ (3d2) local electron configurations. Core-level and valence-band features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward the valence band maximum. An insulator-to-metal like transition is observed at x ? 0. 65 even as the material becomes a p-type semiconductor at lower doping level and eventually becomes degenerately doped. Valence band x-ray photoemission spectroscopy reveals diminution of electronic state density at the top of the valence band while O K-edge x-ray absorption spectroscopy shows the development of a new unoccupied state above the Fermi level as holes are doped into LaCrO3. These results indicate a pronounced redistribution of electronic state density of states upon hole doping, a result that is also obtained by density functional theory with a Hubbard U correction.

  3. Defect Structure of Epitaxial CrxV1 − x Thin Films on MgO(001)

    SciTech Connect (OSTI)

    Kaspar, Tiffany C.; Bowden, Mark E.; Wang, Chong M.; Shutthanandan, V.; Manandhar, Sandeep; Van Ginhoven, Renee M.; Wirth, Brian D.; Kurtz, Richard J.

    2014-01-01

    Epitaxial thin films of CrxV1-x over the entire composition range were deposited on MgO(001) by molecular beam epitaxy. The films exhibited the expected 45° in-plane rotation with no evidence of phase segregation or spinodal decomposition. Pure Cr, with the largest lattice mismatch to MgO, exhibited full relaxation and cubic lattice parameters. As the lattice mismatch decreased with alloy composition, residual epitaxial strain was observed. For 0.2 ≤ x ≤ 0.4 the films were coherently strained to the substrate with associated tetragonal distortion; near the lattice-matched composition of x = 0.33, the films exhibited strain-free pseudomorphic matching to MgO. Unusually, films on the Cr-rich side of the lattice-matched composition exhibited more in-plane compression than expected from the bulk lattice parameters; this result was confirmed with both x-ray diffraction and Rutherford backscattering spectrometry channeling measurements. Although thermal expansion mismatch in the heterostructure may play a role, the dominant mechanism for this phenomenon is still unknown. High resolution transmission electron microscopy was utilized to characterize the misfit dislocation network present at the film/MgO interface. Dislocations were found to be present with a non-uniform distribution, which is attributed to the Volmer-Weber growth mode of the films. The CrxV1-x / MgO(001) system can serve as a model system to study both the fundamentals of defect formation in bcc films and the interplay between nanoscale defects such as dislocations and radiation damage.

  4. In-situ imaging of the nucleation and growth of epitaxial anatase TiO2(001) films on SrTiO3(001)

    SciTech Connect (OSTI)

    Du, Yingge; Kim, Dong Jun; Kaspar, Tiffany C.; Chamberlin, Sara E.; Lyubinetsky, Igor; Chambers, Scott A.

    2012-09-30

    The growth of TiO2 anatase films on Nb doped SrTiO3(001) by oxygen-assisted molecular beam epitaxy has been studied in-situ by scanning tunneling microscopy. We show that the initial growth follows the Stranski-Krastanov mode, where islands form on top of a wetting layer consisting of two monolayers (ML) of TiO2. The epitaxial islands subsequently nucleate and coalescence into large commonly-oriented crystallites. The (4x4) reconstruction observed by reflection high-energy electron diffraction (RHEED) is shown to result from the coexistence of individual (4x1) and (1x4) reconstructions present on different crystallite surfaces. The anatase grows in units of bilayers, resulting in a step height of 2 ML (~0.5 nm). This result explains the fact that the measured period of the RHEED specular-beam intensity oscillations corresponds to the time required for deposition of 2 ML. Ar ion sputtering and UHV annealing results in a transformation to coexisting (4x1) and (1x4) reconstructed terraces on individual crystallites, as commonly observed by ex-situ STM studies.

  5. Method of depositing epitaxial layers on a substrate

    DOE Patents [OSTI]

    Goyal, Amit

    2003-12-30

    An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

  6. Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001)

    SciTech Connect (OSTI)

    Comes, Ryan B.; Xu, Peng; Jalan, Bharat; Chambers, Scott A.

    2015-09-28

    SrTiO3 (STO) epitaxial thin films and heterostructures are of considerable interest due to the wide range of functionalities they exhibit. The alloy perovskite (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT) is commonly used as a substrate for these material structures due to its structural compatibility. However, surprisingly little is known about the electronic properties of the STO/LSAT interface despite its potentially important role in affecting the overall electronic structure of system. We examine the band alignment of STO/LSAT heterostructures using x-ray photoelectron spectroscopy for epitaxial STO films deposited using two different molecular beam epitaxy approaches. We find that the valence band offset ranges from +0.2(1) eV to -0.2(1) eV depending on surface conditions for the film and substrate. From these results we extract a conduction band offset from -2.4(1) eV to -2.8(1) eV, indicating that the conduction band edge is more deeply bound in STO and that LSAT will not act as a sink or trap for electrons in the supported film or multilayer.

  7. Epitaxial Single Crystal Nanostructures for Batteries & PVs ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for Lithium Sulfur Batteries Better Ham & Cheese: Enhanced Anodes and Cathodes for Fuel Cells Epitaxial Single Crystal Nanostructures for Batteries & PVs High Performance ...

  8. Nanoimprint-lithography Patterned Epitaxial Fe Nanowire Arrays...

    Office of Scientific and Technical Information (OSTI)

    epitaxial Fe nanowire arrays on MgO(001) substrates by nanoimprint lithography with a direct metallization of epitaxial materials through a metallic mask, which avoided the...

  9. Low-temperature plasma-deposited silicon epitaxial films: Growth...

    Office of Scientific and Technical Information (OSTI)

    Low-temperature plasma-deposited silicon epitaxial films: Growth and properties Citation Details In-Document Search Title: Low-temperature plasma-deposited silicon epitaxial films:...

  10. Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered...

    Office of Scientific and Technical Information (OSTI)

    Conference: Epitaxial Growth of Strontium Bismuth TantalateNiobate of Buffered Magnesium Oxide Substrates Citation Details In-Document Search Title: Epitaxial Growth of Strontium ...

  11. Epitaxial ternary nitride thin films prepared by a chemical solution...

    Office of Scientific and Technical Information (OSTI)

    Epitaxial ternary nitride thin films prepared by a chemical solution method Citation Details In-Document Search Title: Epitaxial ternary nitride thin films prepared by a chemical ...

  12. Controlled Covalent Modification of Epitaxial Single Layer Graphene...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Controlled Covalent Modification of Epitaxial Single Layer Graphene on ... Title: Controlled Covalent Modification of Epitaxial Single Layer Graphene on 6H-SiC ...

  13. Enlarged Mn 3s splitting and room-temperature ferromagnetism in epitaxially grown oxygen doped Mn{sub 2}N{sub 0.86} films

    SciTech Connect (OSTI)

    Meng, M.; Wu, S. X. Ren, L. Z.; Zhou, W. Q.; Wang, Y. J.; Wang, G. L.; Li, S. W.

    2014-11-07

    Single-phase and oxygen doped Mn{sub 2}N{sub 0.86} thin films have been grown on MgO (111) by plasma-assisted molecular beam epitaxy. The films grow under tensile strain and, remarkably, they show ferromagnetic-like interactions at low temperature and ferromagnetic ordering agreed well with the Bloch-law T{sup 3/2} at room-temperature. We further demonstrate the enlarged Mn 3s splitting (6.46 eV) and its possible relation to the observed ferromagnetism. Our study not only provide a strategy for further theoretical work on oxygen doped manganese nitrides, but also shed promising light on utilizing its room-temperature FM property to fabricate spintronic devices.

  14. Luminescence and superradiance in electron-beam-excited Al{sub x}Ga{1-sub x}N

    SciTech Connect (OSTI)

    Bokhan, P. A.; Gugin, P. P.; Zakrevsky, Dm. E.; Malin, T. V.; Zhuravlev, K. S.; Osinnykh, I. V.; Solomonov, V. I.; Spirina, A. V.

    2014-09-21

    Luminescence and superradiance characteristics of 0.51.2-?m thick Al{sub x}Ga{sub 1-x}N films grown by molecular-beam epitaxy on sapphire substrates were studied under excitation of the films with low-energy (<20 keV) and high-energy (170 keV) electron beams. In both cases, the luminescence spectra looked quite similarly; they exhibited a band-edge luminescence with x-dependent wavelength ranging from 365 nm to 310 nm and a broadband emission taking over the whole visible spectral region. Superradiance within the broad band was obtained by pumping the samples with powerful an electron beam in the form of an open-discharge-generated filament.

  15. Beam Status

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beam Status Beam Status Print Loading... You can also view the Operations Group's Beam History archives.

  16. Synthesis, Structure, and Spectroscopy of Epitaxial EuFeO3 Thin Films

    SciTech Connect (OSTI)

    Choquette, Amber K.; Colby, Robert J.; Moon, E. J.; Schleputz, C. M.; Scafetta, Mark D.; Keavney, David J.; May, Steven J.

    2015-03-04

    Rare earth iron perovskites RFeO3, where R is a rare earth cation, exhibit an array of magnetic, catalytic, optical and electrochemical properties. Here we study EuFeO3 films synthesized by molecular beam epitaxy in order to better understand the optical properties of ferrites. A combination of x-ray diffraction, x-ray reflectivity, Rutherford backscattering spectroscopy, and scanning transmission electron microscopy were used to characterize the film structure and cation composition. X-ray absorption spectroscopy confirms the nominal 3+ valence states of Eu and Fe. The optical properties of EuFeO3 were investigated using variable angle spectroscopic ellipsometry between the phonon energies of 1.25 to 5 eV. We find that EuFeO3 is a semiconductor with an onset of optical absorption near 2.5 eV. The absorption spectrum of EuFeO3 is blue-shifted with respect to LaFeO3 films, a result that is attributed to the structural differences of the two materials.

  17. Epitaxial growth of CZT(S,Se) on silicon

    DOE Patents [OSTI]

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  18. Band-Gap Reduction and Dopant Interaction in Epitaxial La,Cr Co-doped SrTiO3 Thin Films

    SciTech Connect (OSTI)

    Comes, Ryan B.; Sushko, Petr; Heald, Steve M.; Colby, Robert J.; Bowden, Mark E.; Chambers, Scott A.

    2014-12-03

    We show that by co-doping SrTiO3 (STO) epitaxial thin films with equal amounts of La and Cr it is possible to produce films with an optical band gap ~0.9 eV lower than that of undoped STO. Sr1-xLaxTi1-xCrxO3 thin films were deposited by molecular beam epitaxy and characterized using x-ray photoelectron spectroscopy and x-ray absorption near-edge spectroscopy to show that the Cr dopants are almost exclusively in the Cr3+ oxidation state. Extended x-ray absorption fine structure measurements and theoretical modeling suggest that it is thermodynamically preferred for La and Cr dopants to occupy nearest neighbor A- and B-sites in the lattice. Transport measurements show that the material exhibits variable-range hopping conductivity with high resistivity. These results create new opportunities for the use of doped STO films in photovoltaic and photocatalytic applications.

  19. Testing epitaxial Co{sub 1.5}Fe{sub 1.5}Ge(001) electrodes in MgO-based magnetic tunnel junctions

    SciTech Connect (OSTI)

    Neggache, A.; Hauet, T.; Petit-Watelot, S.; Boulet, P.; Andrieu, S.; Bertran, F.; Le Fèvre, P.; Ohresser, P.; Devolder, T.; Mewes, C.

    2014-06-23

    The ability of the full Heusler alloy Co{sub 1.5}Fe{sub 1.5}Ge(001) (CFG) to be a Half-Metallic Magnetic (HMM) material is investigated. Epitaxial CFG(001) layers were grown by molecular beam epitaxy. The results obtained using electron diffraction, X-ray diffraction, and X-ray magnetic circular dichroism are consistent with the full Heusler structure. The pseudo-gap in the minority spin density of state typical in HMM is examined using spin-resolved photoemission. Interestingly, the spin polarization found to be negative at E{sub F} in equimolar CoFe(001) is observed to shift to positive values when inserting Ge in CoFe. However, no pseudo-gap is found at the Fermi level, even if moderate magnetization and low Gilbert damping are observed as expected in HMM materials. Magneto-transport properties in MgO-based magnetic tunnel junctions using CFG electrodes are investigated via spin and symmetry resolved photoemission.

  20. Epitaxial growth of fcc-Co{sub x}Ni{sub 100-x} thin films on MgO(110) single-crystal substrates

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-12-15

    Co{sub x}Ni{sub 100-x} (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co{sub x}Ni{sub 100-x} film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co{sub x}Ni{sub 100-x} films are in agreement within +-0.5% with the values of the respective bulk Co{sub x}Ni{sub 100-x} crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110){sub fcc} film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

  1. Epitaxial c-axis oriented BaTiO{sub 3} thin films on SrTiO{sub 3}-buffered Si(001) by atomic layer deposition

    SciTech Connect (OSTI)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham B.; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Yu, Edward T. [Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Bruley, John [IBM Research Division, Yorktown Heights, New York 10593 (United States)

    2014-02-24

    Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO{sub 3} (BTO) on Si(001) using a thin (1.6?nm) buffer layer of SrTiO{sub 3} (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225??C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600??C. Two-dimensional XRD confirms the tetragonal structure and orientation of 720-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 720?nm-thick BTO films are examined and show an effective dielectric constant of ?660 for the heterostructure.

  2. Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography: Comparison Of Experiments And Simulation

    SciTech Connect (OSTI)

    Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

  3. Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation

    SciTech Connect (OSTI)

    Devaraj, A.; Ramanan, S.; Walvekar, S.; Bowden, M. E.; Shutthanandan, V.; Kaspar, T. C.; Kurtz, R. J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxy (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However, the presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation, it is very challenging to characterize by conventional techniques. Therefore, laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr{sub 0.61}Mo{sub 0.39}, Cr{sub 0.77}Mo{sub 0.23}, and Cr{sub 0.32}V{sub 0.68} alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus, the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were confirmed.

  4. Structural and chemical ordering of Heusler CoxMnyGez epitaxial films on Ge (111). Quantitative study using traditional and anomalous x-ray diffraction techniques

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Collins, B. A.; Chu, Y.; He, L.; Haskel, D.; Tsui, F.

    2015-12-14

    We found that epitaxial films of CoxMnyGez grown on Ge (111) substrates by molecular-beam-epitaxy techniques have been investigated as a continuous function of composition using combinatorial synchrotron x-ray diffraction (XRD) and x-ray fluorescence (XRF) spectroscopy techniques. A high-resolution ternary epitaxial phase diagram is obtained, revealing a small number of structural phases stabilized over large compositional regions. Ordering of the constituent elements in the compositional region near the full Heusler alloy Co2MnGe has been examined in detail using both traditional XRD and a new multiple-edge anomalous diffraction (MEAD) technique. Multiple-edge anomalous diffraction involves analyzing the energy dependence of multiple reflections acrossmore » each constituent absorption edge in order to detect and quantify the elemental distribution of occupation in specific lattice sites. Results of this paper show that structural and chemical ordering are very sensitive to the Co : Mn atomic ratio, such that the ordering is the highest at an atomic ratio of 2 but significantly reduced even a few percent off this ratio. The in-plane lattice is nearly coherent with that of the Ge substrate, while the approximately 2% lattice mismatch is accommodated by the out-of-plane tetragonal strain. Furthermore, the quantitative MEAD analysis reveals no detectable amount (<0.5%) of Co-Mn site swapping, but instead high levels (26%) of Mn-Ge site swapping. Increasing Ge concentration above the Heusler stoichiometry (Co 0.5 Mn 0.25 Ge 0.25 ) is shown to correlate with increased lattice vacancies, antisites, and stacking faults, but reduced lattice relaxation. The highest degree of chemical ordering is observed off the Heusler stoichiometry with a Ge enrichment of 5 at.%.« less

  5. Structural phase diagram for ultra-thin epitaxial Fe 3 O 4  / MgO(0 0 1) films: thickness and oxygen pressure dependence

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Alraddadi, S.; Hines, W.; Yilmaz, T.; Gu, G. D.; Sinkovic, B.

    2016-02-19

    A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe3O4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10-7 torr to 1 × 10-5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED) and x-ray photoemission spectroscopymore » (XPS), respectively. Moreover, the quality of the epitaxial Fe3O4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe3O4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe3O4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

  6. Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

    SciTech Connect (OSTI)

    Jana, Dipankar Porwal, S.; Sharma, T. K. Oak, S. M.; Kumar, Shailendra

    2014-04-15

    Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.

  7. Molecular-beam sampling/mass spectrometric studies of the primary pyrolysis mechanisms of biomass, fossil organic matter, and synthetic polymers

    SciTech Connect (OSTI)

    Evans, R.J.; Milne, T.A.; Soltys, M.N.

    1984-04-01

    To accomplish the determination of primary product composition, the flash pyrolysis of samples in 900/sup 0/C steam/He has been coupled with a molecular-beam sampling system for a mass spectrometer that permits real-time sampling and rapid quenching from ambient hot environments, while preserving reactive and condensible species. The major emphasis of this report is on the determination of the primary pyrolysis mechanisms of the fast pyrolysis of lignocellulosic biomass and its major constituents: cellulose, hemicellulose (particularly the pentoses, xylan and arabinan), and lignin. Other carbonaceous materials are also included for the purposes of comparison and demonstrating the technique, but pyrolysis mechanisms will not be discussed. These materials include Texas lignite, Pittsburgh number8 coal, Utah tar sand, Colorado oil shale, high-moor and low-moor peat, polyethylene, and polystyrene. The plastics are included because they are an important component of municipal solid waste and refuse-derived fuel.

  8. In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 1 surface by supersonic molecular oxygen beams

    SciTech Connect (OSTI)

    Yoshigoe, Akitaka; Teraoka, Yuden; Okada, Ryuta; Yamada, Yoichi; Sasaki, Masahiro

    2014-11-07

    In situ synchrotron radiation photoelectron spectroscopy was performed during the oxidation of the Ge(100)-2 1 surface induced by a molecular oxygen beam with various incident energies up to 2.2 eV from the initial to saturation coverage of surface oxides. The saturation coverage of oxygen on the clean Ge(100) surface was much lower than one monolayer and the oxidation state of Ge was +2 at most. This indicates that the Ge(100) surface is so inert toward oxidation that complete oxidation cannot be achieved with only pure oxygen (O{sub 2}) gas, which is in strong contrast to Si surfaces. Two types of dissociative adsorption, trapping-mediated and direct dissociation, were confirmed by oxygen uptake measurements depending on the incident energy of O{sub 2}. The direct adsorption process can be activated by increasing the translational energy, resulting in an increased population of Ge{sup 2+} and a higher final oxygen coverage. We demonstrated that hyperthermal O{sub 2} beams remarkably promote the room-temperature oxidation with novel atomic configurations of oxides at the Ge(100) surface. Our findings will contribute to the fundamental understanding of oxygen adsorption processes at 300 K from the initial stages to saturated oxidation.

  9. CROSSED MOLECULAR BEAM STUDIES OF CHEMILUMINESCENT REACTIONS: F{sub 2} + I{sub 2}, Br{sub 2} and ICl

    SciTech Connect (OSTI)

    Kahler, C.C.; Lee, Y.T.

    1980-05-01

    The chemiluminescent bimolecular halogen-halogen reactions, F{sub 2} + I{sub 2}, Br{sub 2} and ICl, have been studied by the crossed molecular beam technique. Undispersed chemiluminescence was measured as a function of collision energy and, for I{sub 2} + F{sub 2}, as a function of the two beam pressures. Although no spectra were obtained to positively identify the emitters as IF*, ClF* and BrF*, arguments are given to support this identification. The observed reaction thresholds of 4.2 and 5.9 kcal/mole for I{sub 2} + F{sub 2} and ICl + F{sub 2} , respectively, are the same as the threshold energies for production of the stable trihalogens I{sub 2}F and ClF. This coincidence of threshold energies, as well as similar high collision energy behavior, implies that the chemiluminescent reaction proceeds via a stable trihalogen intermediate. This mechanism can explain our results and the results of other workers without resorting to a symmetry forbidden four center reaction mechanism. A threshold of 11.3 kcal/mole was found for Br{sub 2} + F{sub 2} , no threshold for Br{sub 2}F has been previously reported. Laser enhancement of the I{sub 2} + F{sub 2} reaction was attempted, but no enhancement was seen.

  10. Electroless epitaxial etching for semiconductor applications

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  11. Epitaxial growth of silicon for layer transfer

    DOE Patents [OSTI]

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  12. Ion beam processing of advanced electronic materials

    SciTech Connect (OSTI)

    Cheung, N.W.; Marwick, A.D.; Roberto, J.B. (eds.) (California Univ., Berkeley, CA (USA); International Business Machines Corp., Yorktown Heights, NY (USA). Thomas J. Watson Research Center; Oak Ridge National Lab., TN (USA))

    1989-01-01

    This report contains research programs discussed at the materials research society symposia on ion beam processing of advanced electronic materials. Major topics include: shallow implantation and solid-phase epitaxy; damage effects; focused ion beams; MeV implantation; high-dose implantation; implantation in III-V materials and multilayers; and implantation in electronic materials. Individual projects are processed separately for the data bases. (CBS)

  13. GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J.; Sun, X.; Alian, A.; Heyns, M.; Afanas'ev, V. V.

    2011-04-01

    The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

  14. Beam Status

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beam Status Print Loading... You can also view the Operations Group's Beam History archives

  15. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    See the Foundry's full equipment list Nanofabrication Capabilities & Tools Instrument Scheduler Major Capabilities: Instruments and Labs Zeiss Crossbeam 1540 EsB The Molecular Foundry Zeiss Cross-beam is one of the most versatile lithographic and inspection tools allowing fabrication of complex prototypes for nanoelectronics, nano-optical antenna, modifying scanning probe tips, rapid electrical contacting and many other applications. The 1500XB Cross Beam combines the Gemini field emission

  16. Role of carbon surface diffusion and strain on the epitaxial...

    Office of Scientific and Technical Information (OSTI)

    epitaxial growth of graphene on SiC(0001). Citation Details In-Document Search Title: Role of carbon surface diffusion and strain on the epitaxial growth of graphene on SiC(0001). ...

  17. Structure of epitaxial (Fe,N) codoped rutile TiO2 thin films by x-ray absorption

    SciTech Connect (OSTI)

    Kaspar, Tiffany C.; Ney, A.; Mangham, Andrew N.; Heald, Steve M.; Joly, Yves; Ney, V.; Wilhelm, F.; Rogalev, A.; Yakou, Flora; Chambers, Scott A.

    2012-07-23

    Homoepitaxial thin films of Fe:TiO2 and (Fe,N):TiO2 were deposited on rutile(110) by molecular beam epitaxy. X-ray absorption near edge spectroscopy (XANES) spectra were collected at the Ti L-edge, Fe L-edge, O K-edge, N K-edge, and Ti K-edge. No evidence of structural disorder associated with a high concentration of oxygen vacancies is observed. Substitution of Fe for Ti could not be confirmed, although secondary phase Fe2O3 and metallic Fe can be ruled out. The similarity of the N K-edge spectra to O, and the presence of a strong x-ray linear dichroism (XLD) signal for the N K-edge, indicates that N is substitutional for O in the rutile lattice, and is not present as a secondary phase such as TiN. Simulations of the XANES spectra qualitatively confirm substitution, although N appears to be present in more than one local environment. Neither Fe:TiO2 nor (Fe,N):TiO2 exhibit intrinsic room temperature ferromagnetism, despite the presence of mixed valence Fe(II)/Fe(III) in the reduced (Fe,N):TiO2 film.

  18. Structural and chemical ordering of Heusler CoxMnyGez epitaxial films on Ge (111). Quantitative study using traditional and anomalous x-ray diffraction techniques

    SciTech Connect (OSTI)

    Collins, B. A.; Chu, Y.; He, L.; Haskel, D.; Tsui, F.

    2015-12-14

    We found that epitaxial films of CoxMnyGez grown on Ge (111) substrates by molecular-beam-epitaxy techniques have been investigated as a continuous function of composition using combinatorial synchrotron x-ray diffraction (XRD) and x-ray fluorescence (XRF) spectroscopy techniques. A high-resolution ternary epitaxial phase diagram is obtained, revealing a small number of structural phases stabilized over large compositional regions. Ordering of the constituent elements in the compositional region near the full Heusler alloy Co2MnGe has been examined in detail using both traditional XRD and a new multiple-edge anomalous diffraction (MEAD) technique. Multiple-edge anomalous diffraction involves analyzing the energy dependence of multiple reflections across each constituent absorption edge in order to detect and quantify the elemental distribution of occupation in specific lattice sites. Results of this paper show that structural and chemical ordering are very sensitive to the Co : Mn atomic ratio, such that the ordering is the highest at an atomic ratio of 2 but significantly reduced even a few percent off this ratio. The in-plane lattice is nearly coherent with that of the Ge substrate, while the approximately 2% lattice mismatch is accommodated by the out-of-plane tetragonal strain. Furthermore, the quantitative MEAD analysis reveals no detectable amount (<0.5%) of Co-Mn site swapping, but instead high levels (26%) of Mn-Ge site swapping. Increasing Ge concentration above the Heusler stoichiometry (Co 0.5 Mn 0.25 Ge 0.25 ) is shown to correlate with increased lattice vacancies, antisites, and stacking faults, but reduced lattice relaxation. The highest degree of chemical ordering is observed off the Heusler stoichiometry with a Ge enrichment of 5 at.%.

  19. Chemical vapor deposition of epitaxial silicon

    DOE Patents [OSTI]

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  20. Molecular fountain.

    SciTech Connect (OSTI)

    Strecker, Kevin E.; Chandler, David W.

    2009-09-01

    A molecular fountain directs slowly moving molecules against gravity to further slow them to translational energies that they can be trapped and studied. If the molecules are initially slow enough they will return some time later to the position from which they were launched. Because this round trip time can be on the order of a second a single molecule can be observed for times sufficient to perform Hz level spectroscopy. The goal of this LDRD proposal was to construct a novel Molecular Fountain apparatus capable of producing dilute samples of molecules at near zero temperatures in well-defined user-selectable, quantum states. The slowly moving molecules used in this research are produced by the previously developed Kinematic Cooling technique, which uses a crossed atomic and molecular beam apparatus to generate single rotational level molecular samples moving slowly in the laboratory reference frame. The Kinematic Cooling technique produces cold molecules from a supersonic molecular beam via single collisions with a supersonic atomic beam. A single collision of an atom with a molecule occurring at the correct energy and relative velocity can cause a small fraction of the molecules to move very slowly vertically against gravity in the laboratory. These slowly moving molecules are captured by an electrostatic hexapole guiding field that both orients and focuses the molecules. The molecules are focused into the ionization region of a time-of-flight mass spectrometer and are ionized by laser radiation. The new molecular fountain apparatus was built utilizing a new design for molecular beam apparatus that has allowed us to miniaturize the apparatus. This new design minimizes the volumes and surface area of the machine allowing smaller pumps to maintain the necessary background pressures needed for these experiments.

  1. Beam-beam simulations for separated beams

    SciTech Connect (OSTI)

    Furman, Miguel A.

    2000-04-10

    We present beam-beam simulation results from a strong-strong gaussian code for separated beams for the LHC and RHIC. The frequency spectrum produced by the beam-beam collisions is readily obtained and offers a good opportunity for experimental comparisons. Although our results for the emittance blowup are preliminary, we conclude that, for nominal parameter values, there is no significant difference between separated beams and center-on-center collisions.

  2. Co: clqrt. Beam

    Office of Legacy Management (LM)

    Co: clqrt. Beam*/:

  3. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb...

    Office of Scientific and Technical Information (OSTI)

    force microscopy studies show high crystalline quality and smooth surface morphology. ... MODULATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; QUANTUM WELLS; SHEETS; STRAINS; ...

  4. Wafer bonded epitaxial templates for silicon heterostructures

    DOE Patents [OSTI]

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcubera I

    2008-03-11

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  5. Domain epitaxy for thin film growth

    DOE Patents [OSTI]

    Narayan, Jagdish

    2005-10-18

    A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

  6. Dual ion beam assisted deposition of biaxially textured template layers

    DOE Patents [OSTI]

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  7. Electrostatic transfer of epitaxial graphene to glass. (Conference) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Electrostatic transfer of epitaxial graphene to glass. Citation Details In-Document Search Title: Electrostatic transfer of epitaxial graphene to glass. We report on a scalable electrostatic process to transfer epitaxial graphene to arbitrary glass substrates, including Pyrex and Zerodur. This transfer process could enable wafer-level integration of graphene with structured and electronically-active substrates such as MEMS and CMOS. We will describe the electrostatic transfer

  8. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-01-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  9. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  10. Electron holography of devices with epitaxial layers

    SciTech Connect (OSTI)

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0}?=?12.75?V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge}?=?18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L?=?30?nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  11. Selective epitaxy using the gild process

    DOE Patents [OSTI]

    Weiner, Kurt H.

    1992-01-01

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  12. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic...

  13. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome...

  14. Modification of structure and magnetic anisotropy of epitaxial...

    Office of Scientific and Technical Information (OSTI)

    films by hydrogen reduction Citation Details In-Document Search Title: Modification of structure and magnetic anisotropy of epitaxial CoFeO films by hydrogen reduction ...

  15. Kinetics of oxygen surface exchange on epitaxial Ruddlesden-Popper...

    Office of Scientific and Technical Information (OSTI)

    Kinetics of oxygen surface exchange on epitaxial Ruddlesden-Popper phases and correlations to first-principles descriptors Citation Details In-Document Search This content will ...

  16. Beam Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    into the storage ring with the time structure shown here. The beam is accumulated in the PSR and then transported to Target-1. beamtransport1 Simplified drawing of the beam...

  17. Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered

    Office of Scientific and Technical Information (OSTI)

    Magnesium Oxide Substrates (Conference) | SciTech Connect Conference: Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered Magnesium Oxide Substrates Citation Details In-Document Search Title: Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered Magnesium Oxide Substrates Epitaxial films of strontium bismuth tantalate (SrBi{sub 2}Ta{sub 2}O{sub 9}, SBT) and strontium bismuth niobate (SrBi{sub 2}Nb{sub 2}O{sub 9}, SBN) were grown using solution deposition

  18. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  19. Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large Sharp Magnetoelectric Effect Home Author: B. Liu, T. Sun, J. He, V. P. Dravid Year: 2010 Abstract: Nanostructures of...

  20. Epitaxial CoSi2 on MOS devices

    DOE Patents [OSTI]

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  1. Electrostatic Transfer of Epitaxial Graphene. (Conference) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect Electrostatic Transfer of Epitaxial Graphene. Citation Details In-Document Search Title: Electrostatic Transfer of Epitaxial Graphene. Abstract not provided. Authors: Biedermann, Laura Butler Publication Date: 2011-05-01 OSTI Identifier: 1109245 Report Number(s): SAND2011-3570C 471561 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: MSE 520 Graduate Seminar Series (UW) held May 23, 2011 in Seattle, WA.; Related Information: Proposed for

  2. Growth Mode and Substrate Symmetry Dependent Strain in Epitaxial Graphene.

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Growth Mode and Substrate Symmetry Dependent Strain in Epitaxial Graphene. Citation Details In-Document Search Title: Growth Mode and Substrate Symmetry Dependent Strain in Epitaxial Graphene. Abstract not provided. Authors: Ohta, Taisuke ; Biedermann, Laura Butler ; Beechem Iii, Thomas Edwin ; Howell, Stephen Wayne ; Schmidt, Diedrich A. Publication Date: 2010-06-01 OSTI Identifier: 1123545 Report Number(s): SAND2010-3581J 492436 DOE Contract Number:

  3. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Wednesday, 26 March 2008 00:00 Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest

  4. Characterization and comparison of devices fabricated from epitaxial

    Office of Scientific and Technical Information (OSTI)

    graphene on SiC and electrostatically transferred graphene. (Conference) | SciTech Connect Characterization and comparison of devices fabricated from epitaxial graphene on SiC and electrostatically transferred graphene. Citation Details In-Document Search Title: Characterization and comparison of devices fabricated from epitaxial graphene on SiC and electrostatically transferred graphene. Abstract not provided. Authors: Howell, Stephen W. ; Biedermann, Laura Butler ; Beechem III, Thomas

  5. Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on

    Office of Scientific and Technical Information (OSTI)

    Monocrystalline and Polycrystalline Seed Layers on Glass (Journal Article) | SciTech Connect Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass Citation Details In-Document Search Title: Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass Authors: Teplin, Charles W. ; Grover, Sachit ; Chitu, Adrian ; Limanov, Alexander ; Chahal, Monical ; Im,

  6. Crystal nucleation and near-epitaxial growth in nacre

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crystal nucleation and near-epitaxial growth in nacre Crystal nucleation and near-epitaxial growth in nacre Print Thursday, 12 December 2013 13:56 Nacre--the iridescent inner lining of many mollusk shells-- has a unique strcuture that is remarkably resistant to fracture. The nacre featured on this cover is from Haliotis laevigata with average layer thickness 470-nm. The colors represent crystal orientationthe crystal lattice tilts across tablets.left stack all tablets are yellow, hence all

  7. Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

    SciTech Connect (OSTI)

    Petz, C. W.; Floro, J. A.; Yang, D.; Levy, J.

    2012-04-02

    Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in ultra-high vacuum (UHV), forming ordered arrays of nanoscale SiC precipitates that have been suggested to template subsequent epitaxial Ge growth to form ordered QD arrays. We show that 3C-SiC nanodots form, in cube-on-cube epitaxial registry with the Si substrate. The SiC nanodots are fully relaxed by misfit dislocations and exhibit small lattice rotations with respect to the substrate. Ge overgrowth at elevated deposition temperatures, followed by Si capping, results in expulsion of the Ge from SiC template sites due to the large chemical and lattice mismatch between Ge and C. Maintaining an epitaxial, low-defectivity Si matrix around the quantum dots is important for creating reproducible electronic and spintronic coupling of states localized at the QDs.

  8. BEAM PROPAGATOR

    Energy Science and Technology Software Center (OSTI)

    003691MLTPL00 Beam Propagator for Weather Radars, Modules 1 and 2 http://www.exelisvis.com/ProductsServices/IDL.aspx

  9. Beam History

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beam Status Beam History Print Beamline History Request Form To request a beam current histograph from the ALS storage ring beam histograph database, select the year, month, and day, then click on "Submit Request". Histographs are available as far back as February 2, 1994. Year 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1998 1997 1996 1995 1994 Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Day 01 02 03 04 05 06 07 08 09 10 11 12 13

  10. SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

    SciTech Connect (OSTI)

    Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M; Menichelli, D; Friedl, F

    2014-06-01

    Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam.

  11. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    SciTech Connect (OSTI)

    Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

    2014-11-24

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

  12. Effect of Structural Stress on the Laser Quality of Highly Doped Yb:KY(WO4)2/KY(WO4)2 and Yb:KLu(WO4)2/KLu(WO4)2 Epitaxial Structures

    SciTech Connect (OSTI)

    Carvajal, J.; Raghothamachar, B; Silvestre, O; Chen, H; Pujol, M; Petrov, V; Dudley, M; Aguilo, M; Diaz, F

    2009-01-01

    In this communication we demonstrate how the difference in laser performance of two highly doped (20 at %) epitaxial layers of Yb-doped KY(WO4)2 (KYW) grown on a KYW substrate and Yb-doped KLu(WO4)2 (KLuW) grown on a KLuW substrate, respectively, is related to the presence of structural stress in the epilayers, investigated by synchrotron white beam X-ray topography. From the results obtained, it is clear that the samples that show a larger amount of structural stress, Yb:KYW/KYW epitaxies, lead to lower efficiency in laser operation, giving a direct correlation between the existence and magnitude of such structural stress and the loss in efficiency of laser performance in such epitaxial layers which, from a spectroscopical point of view, are otherwise equivalent.

  13. Epitaxial ternary nitride thin films prepared by a chemical solution method

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Epitaxial ternary nitride thin films prepared by a chemical solution method Citation Details In-Document Search Title: Epitaxial ternary nitride thin films prepared by a chemical solution method It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach,

  14. Beam History

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beam History Print Beamline History Request Form To request a beam current histograph from the ALS storage ring beam histograph database, select the year, month, and day, then click on "Submit Request". Histographs are available as far back as February 2, 1994. Year 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1998 1997 1996 1995 1994 Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Day 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17

  15. Beam History

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beam History Print Beamline History Request Form To request a beam current histograph from the ALS storage ring beam histograph database, select the year, month, and day, then click on "Submit Request". Histographs are available as far back as February 2, 1994. Year 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1998 1997 1996 1995 1994 Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Day 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17

  16. Electroelastic fields in artificially created vortex cores in epitaxial

    Office of Scientific and Technical Information (OSTI)

    BiFeO3 thin films (Journal Article) | SciTech Connect Electroelastic fields in artificially created vortex cores in epitaxial BiFeO3 thin films Citation Details In-Document Search This content will become publicly available on August 4, 2016 Title: Electroelastic fields in artificially created vortex cores in epitaxial BiFeO3 thin films Authors: Winchester, B. [1] ; Balke, N. [2] ; Cheng, X. X. [1] ; Morozovska, A. N. [3] ; Kalinin, S. [2] Search SciTech Connect for author "Kalinin,

  17. Process for growing epitaxial gallium nitride and composite wafers

    DOE Patents [OSTI]

    Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

    2003-05-13

    A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

  18. Final Report- Low Cost, Epitaxial Growth of II-VI Materials for Multijunction Photovoltaic Cells

    Broader source: Energy.gov [DOE]

    Multijunction solar cells have theoretical power conversion efficiencies in excess of 29% under one sun illumination and could become a highly disruptive technology if fabricated using low cost processing techniques to epitaxially grow defect tolerant, thin films on silicon. The PLANT PV/Molecular Foundry team studied the feasibility of using cadmium selenide (CdSe) as the wide band-gap, top cell and Si as the bottom cell in monolithically integrated tandem architecture. The greatest challenge in developing tandem solar cells is depositing wide band gap semiconductors that are both highly doped and have minority carrier lifetimes greater than 1 ns. The proposed research was to determine whether it is possible to rapidly grow CdSe films with sufficient minority carrier lifetimes and doping levels required to produce an open-circuit voltage (Voc) greater than 1.1V using close-space sublimation (CSS).

  19. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect (OSTI)

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

    2013-08-19

    Thin AlN layers were grown at 200650 C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ?0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ? 400 C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ? 500 C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  20. Cantilever Epitaxy Process Wins R&D 100 Award

    Broader source: Energy.gov [DOE]

    Sandia National Laboratories received an R&D 100 Award from R&D Magazine for development of a new process for growing gallium nitride on an etched sapphire substrate. The process, called cantilever epitaxy, promises to make brighter and more efficient green, blue, and white LEDs.

  1. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    SciTech Connect (OSTI)

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A; Geohegan, David B; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2014-01-01

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

  2. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A; Geohegan, David B; Kim, Ki Wook; Zhang, Yong; et al

    2014-01-01

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

  3. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

    DOE Patents [OSTI]

    Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

    2004-09-28

    A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

  4. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOE Patents [OSTI]

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2015-01-06

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  5. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOE Patents [OSTI]

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2013-02-19

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  6. A molecular beam optical study of YCC

    SciTech Connect (OSTI)

    Xin, J.; Marr, A.J.; Steimle, T.C.

    1996-12-31

    A weak signal near 13395 cm{sup -1} in the low resolution laser induced fluorescence spectra of the laser ablated Y/ethylene supersonic expansion products was noted by Simard. He speculated that it may be due to yttrium dicarbide. Following up on this suggestion, the authors have detected by medium resolution LIF three red degraded bands at 12895 cm{sup -1}, 13395 cm{sup -1} and 13896 cm{sup -1} which is attributed to YCC. The resolved LIF spectra for the 12895 cm{sup -1} and 13395 cm{sup -1} band systems produce strong Stokes progressions with the features separated by approximately 560 cm{sup -1}. These are tentatively assigned to the Y-CC ground state stretching. Additional weaker features are also observed. The high resolution LIF spectrum of the 12895 cm{sup -1} band system was recorded. Attempts to model the spectrum as a A{sup 4} A{sub 1}-X{sup 2}A{sub 1} transition suggested by a recent ab initio calculation are being made. Progress on the analysis will be presented.

  7. Anti-damping spin transfer torque through epitaxial nickel oxide

    SciTech Connect (OSTI)

    Moriyama, Takahiro; Nagata, Masaki; Yoshimura, Yoko; Matsuzaki, Noriko; Ono, Teruo; Takei, So; Tserkovnyak, Yaroslav; Terashima, Takahito

    2015-04-20

    We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO{sub 2} films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin current injection from the Pt by the spin Hall effect revealed the change of the ferromagnetic resonance linewidth depending on the amount of the spin current injection. The results can be interpreted that there is an angular momentum transfer through the NiO. A high efficient angular momentum transfer we observed in the epitaxial NiO can be attributed to the well-defined orientation of the antiferromagnetic moments and the spin quantization axis of the injected spin current.

  8. On the kinetic barriers of graphene homo-epitaxy

    SciTech Connect (OSTI)

    Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

    2014-12-01

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (?6?meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size.

  9. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  10. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  11. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  12. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  13. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    DOE Patents [OSTI]

    Goyal, Amit (Knoxville, TN)

    2012-07-24

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  14. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    DOE Patents [OSTI]

    Goyal, Amit

    2013-07-09

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  15. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  16. CEBAF beam loss accounting

    SciTech Connect (OSTI)

    Ursic, R.; Mahoney, K.; Hovater, C.; Hutton, A.; Sinclair, C.

    1995-12-31

    This paper describes the design and implementation of a beam loss accounting system for the CEBAF electron accelerator. This system samples the beam curent throughout the beam path and measures the beam current accurately. Personnel Safety and Machine Protection systems use this system to turn off the beam when hazardous beam losses occur.

  17. Epitaxial growth of three-dimensionally architectured optoelectronic devices

    SciTech Connect (OSTI)

    Nelson, Erik C.; Dias, Neville L.; Bassett, Kevin P.; Dunham, Simon N.; Verma, Varun; Miyake, Masao; Wiltzius, Pierre; Rogers, John A.; Coleman, James J.; Li, Xiuling; Braun, Paul V.

    2011-07-24

    Optoelectronic devices have long benefited from structuring in multiple dimensions on microscopic length scales. However, preserving crystal epitaxy, a general necessity for good optoelectronic properties, while imparting a complex three-dimensional structure remains a significant challenge. Three-dimensional (3D) photonic crystals are one class of materials where epitaxy of 3D structures would enable new functionalities. Many 3D photonic crystal devices have been proposed, including zero-threshold lasers, low-loss waveguides, high-efficiency light-emitting diodes (LEDs) and solar cells, but have generally not been realized because of material limitations. Exciting concepts in metamaterials, including negative refraction and cloaking, could be made practical using 3D structures that incorporate electrically pumped gain elements to balance the inherent optical loss of such devices. Here we demonstrate the 3D-template-directed epitaxy of group IIIV materials, which enables formation of 3D structured optoelectronic devices. We illustrate the power of this technique by fabricating an electrically driven 3D photonic crystal LED.

  18. 2016 Project Portfolio: Solid-State Lighting

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Efficiency Package Incorporating Nanotechnology Based Downconverter and High ... This goal will be achieved by combining molecular beam epitaxy (MBE) and metallorganic chemical ...

  19. Development of Spintronic Bandgap Materials (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    Quantum dots assemblies were grown by molecular beam epitaxy on carbon-templated silicon substrates. These structures were characterized by atomic force microscopy. Vertically ...

  20. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    nitrides (1) interfaces (1) layers (1) materials science (1) materials science photovoltaic (1) molecular beam epitaxy (1) oxygen (1) passivation (1) plasma (1) reflection (1) ...

  1. Electronic & Magnetic Materials & Devices Capabilities | Argonne...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electronic & Magnetic Materials & Devices Capabilities Synthesis Colloidal chemistry and self-assembly techniques Complex oxide film synthesis via molecular beam epitaxy (DCA R450...

  2. Electronic & Magnetic Materials & Devices | Argonne National...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    laser spectroscopy, molecular beam epitaxy, and novel approaches for hybrid, organic and nanoparticle materials synthesis. Research activities include: Low-dimensional materials...

  3. Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial...

    Office of Scientific and Technical Information (OSTI)

    Rotationally Commensurate Growth of MoSsubscript 2 on Epitaxial Graphene Citation Details In-Document Search Title: Rotationally Commensurate Growth of MoSsubscript 2 on ...

  4. Beam geometry selection using sequential beam addition

    SciTech Connect (OSTI)

    Popple, Richard A. Brezovich, Ivan A.; Fiveash, John B.

    2014-05-15

    Purpose: The selection of optimal beam geometry has been of interest since the inception of conformal radiotherapy. The authors report on sequential beam addition, a simple beam geometry selection method, for intensity modulated radiation therapy. Methods: The sequential beam addition algorithm (SBA) requires definition of an objective function (score) and a set of candidate beam geometries (pool). In the first iteration, the optimal score is determined for each beam in the pool and the beam with the best score selected. In the next iteration, the optimal score is calculated for each beam remaining in the pool combined with the beam selected in the first iteration, and the best scoring beam is selected. The process is repeated until the desired number of beams is reached. The authors selected three treatment sites, breast, lung, and brain, and determined beam arrangements for up to 11 beams from a pool comprised of 25 equiangular transverse beams. For the brain, arrangements were additionally selected from a pool of 22 noncoplanar beams. Scores were determined for geometries comprised equiangular transverse beams (EQA), as well as two tangential beams for the breast case. Results: In all cases, SBA resulted in scores superior to EQA. The breast case had the strongest dependence on beam geometry, for which only the 7-beam EQA geometry had a score better than the two tangential beams, whereas all SBA geometries with more than two beams were superior. In the lung case, EQA and SBA scores monotonically improved with increasing number of beams; however, SBA required fewer beams to achieve scores equivalent to EQA. For the brain case, SBA with a coplanar pool was equivalent to EQA, while the noncoplanar pool resulted in slightly better scores; however, the dose-volume histograms demonstrated that the differences were not clinically significant. Conclusions: For situations in which beam geometry has a significant effect on the objective function, SBA can identify arrangements equivalent to equiangular geometries but using fewer beams. Furthermore, SBA provides the value of the objective function as the number of beams is increased, allowing the planner to select the minimal beam number that achieves the clinical goals. The method is simple to implement and could readily be incorporated into an existing optimization system.

  5. Crystallographic texture engineering through novel melt strategies via electron beam melting: Inconel 718

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dehoff, Ryan R.; Kirka, Michael M.; List, III, Frederick Alyious; Unocic, Kinga A.; Sames, William J.

    2014-01-01

    Preliminary research has demonstrated the ability to utilise novel scan strategies in the electron beam melting (EBM) process to establish control of crystallographic texture within Inconel 718 deposits. Conventional EBM scan strategies and process parameters yield coarse columnar grains aligned parallel to the build direction. Through varying process parameters such as beam power, beam velocity, beam focus and scan strategy, the behaviour of the electron beam can be manipulated from a line source to a point source. The net effect of these variations is that the resulting crystallographic texture is controlled in a manner to produce either epitaxial deposits ormore » fully equiaxed deposits. Furthermore, this research demonstrates the ability to change the crystallographic texture on the macroscale indicating that EBM technology can be used to create complex geometric components with both site-specific microstructures and material properties.« less

  6. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Revealing the Fluctuations of Flexible DNA in 3D First-of-their-kind images by Molecular ... Electronic Landscapes of Molecular Nanostructures: Mapping States for Charge Transfer with ...

  7. Molecular Dynameomics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Dynameomics Molecular Dynameomics DaggettHiResWhitebg.png Key Challenges: Perform molecular dynamics simulations to characterize both native (i.e. biologically active) and...

  8. Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

    DOE Patents [OSTI]

    Iwancizko, Eugene; Jones, Kim M.; Crandall, Richard S.; Nelson, Brent P.; Mahan, Archie Harvin

    2001-01-01

    The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

  9. Probing Interactions in Complex Molecular Systems through Ordered Assembly

    SciTech Connect (OSTI)

    De Yoreo, J J; Bartelt, M C; Orme, C A; Villacampa, A; Weeks, B L; Miller, A E

    2002-01-31

    Emerging from the machinery of epitaxial science and chemical synthesis, is a growing emphasis on development of self-organized systems of complex molecular species. The nature of self-organization in these systems spans the continuum from simple crystallization of large molecules such as dendrimers and proteins, to assembly into large organized networks of nanometer-scale structures such as quantum dots or nanoparticles. In truth, self-organization in complex molecular systems has always been a central feature of many scientific disciplines including fields as diverse as structural biology, polymer science and geochemistry. But over the past decade, changes in those fields have often been marked by the degree to which researchers are using molecular-scale approaches to understand the hierarchy of structures and processes driven by this ordered assembly. At the same time, physical scientists have begun to use their knowledge of simple atomic and molecular systems to fabricate synthetic self-organized systems. This increasing activity in the field of self-organization is testament to the success of the physical and chemical sciences in building a detailed understanding of crystallization and epitaxy in simple atomic and molecular systems, one that is soundly rooted in thermodynamics and chemical kinetics. One of the fundamental challenges of chemistry and materials science in the coming decades is to develop a similarly well-founded physical understanding of assembly processes in complex molecular systems. Over the past five years, we have successfully used in situ atomic force microscopy (AFM) to investigate the physical controls on single crystal epitaxy from solutions for a wide range of molecular species. More recently, we have combined this method with grazing incidence X-ray diffraction and kinetic Monte Carlo modeling in order to relate morphology to surface atomic structure and processes. The purpose of this proposal was to extend this approach to assemblies of three classes of ''super molecular'' nanostructured materials. These included (1) dendrimers, (2) DNA bonded nano-particles, and (3) colloids, all of which form solution-based self-organizing systems. To this end, our goals were, first, to learn how to modify models of epitaxy in small molecule systems so that they are useful, efficient, and applicable to assembly of super-molecular species; and, second, to learn how systematic variations in the structure and bonding of the building blocks affect the surface kinetics and energetics that control the assembly process and the subsequent dynamic behavior of the assembled structures. AFM imaging provided experimental data on morphology and kinetics, while kinetic Monte Carlo (KMC) simulations related these data to molecular-scale processes and features.

  10. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    SciTech Connect (OSTI)

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  11. Structure and magnetism of epitaxial rare-earth-transition-metal films

    SciTech Connect (OSTI)

    Fullerton, E.E.; Sowers, C.H.; Pearson, J.P.; Bader, S.D.

    1996-10-01

    Growth of epitaxial transition-metal superlattices; has proven essential in elucidating the role of crystal orientation and structure on magnetic properties such as giant magnetoresistance, interlayer coupling, and magnetic surface anisotropies. Extending these studies to the growth of epitaxial rare earth-transition metal (RE-TM) films and superlattices promises to play an equally important role in exploring and optimizing the properties of hard magnets. For instance, Skomski and Coey predict that a giant energy product (120 MG Oe) is possible in multilayer structures consisting of aligned hard-magnet layers exchanged coupled with soft-phase layers with high magnetization. Epitaxy provides one route to synthesizing such exchange-hardened magnets on controlled length scales. Epitaxial growth also allows the magnetic properties to be tailored by controlling the crystal orientation and the anisotropies of the magnetic layers and holds the possibility of stabilizing metastable phases. This paper describes the epitaxy and magnetic properties for several alloys.

  12. Epitaxial growth of high quality WO3 thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Leng, X.; Pereiro, J.; Strle, J.; Bollinger, A. T.; Bozovic, I.

    2015-09-09

    We have grown epitaxial WO3 films on various single-crystal substrates using radio-frequency (RF) magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO4 substrates, films grown on YAlO3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. Furthermore, the dependence of the growth modes and the surface morphology on the lattice mismatch is discussed.

  13. Relativistic electron beam generator

    DOE Patents [OSTI]

    Mooney, L.J.; Hyatt, H.M.

    1975-11-11

    A relativistic electron beam generator for laser media excitation is described. The device employs a diode type relativistic electron beam source having a cathode shape which provides a rectangular output beam with uniform current density.

  14. Laser beam monitoring system

    DOE Patents [OSTI]

    Weil, Bradley S. (Knoxville, TN); Wetherington, Jr., Grady R. (Harriman, TN)

    1985-01-01

    Laser beam monitoring systems include laser-transparent plates set at an angle to the laser beam passing therethrough and light sensor for detecting light reflected from an object on which the laser beam impinges.

  15. Beam imaging sensor

    DOE Patents [OSTI]

    McAninch, Michael D; Root, Jeffrey J

    2015-03-31

    The present invention relates generally to the field of sensors for beam imaging and, in particular, to a new and useful beam imaging sensor for use in determining, for example, the power density distribution of a beam including, but not limited to, an electron beam or an ion beam. In one embodiment, the beam imaging sensor of the present invention comprises, among other items, a circumferential slit that is either circular, elliptical or polygonal in nature.

  16. BEAM INSTRUMENTATION FOR HIGH POWER HADRON BEAMS

    SciTech Connect (OSTI)

    Aleksandrov, Alexander V

    2013-01-01

    This presentation will describe developments in the beam diagnostics which support the understanding and operation of high power hadron accelerators. These include the measurement of large dynamic range transverse and longitudinal beam profiles, beam loss detection, and non-interceptive diagnostics.

  17. Apparatus for externally controlled closed-loop feedback digital epitaxy

    DOE Patents [OSTI]

    Eres, D.; Sharp, J.W.

    1996-07-30

    A method and apparatus for digital epitaxy are disclosed. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced. 5 figs.

  18. Apparatus for externally controlled closed-loop feedback digital epitaxy

    DOE Patents [OSTI]

    Eres, Djula; Sharp, Jeffrey W.

    1996-01-01

    A method and apparatus for digital epitaxy. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced.

  19. Generation of beams of refractory-metal clusters

    SciTech Connect (OSTI)

    Wexler, S.; Riley, R.J.; Parks, E.K.; Mao, C.R.; Pobo, L.G.

    1982-01-01

    Interest in the physical and chemical properties of small metal clusters has recently stimulated the development of sources for the generation of molecular beams of metal clusters, since the collision-free environment of a beam has the advantage of permitting in-flight study of isolated species free of interference from surroundings. For example, spectroscopic studies utilizing tunable lasers may be performed in the molecular beam environment. The objectives of our research program are the elucidation of the physical and chemical properties of clusters of refractory metal atoms, in particular those of the catalytically active transition metals. For these purposes we have built and tested two sources suitable for generation of cluster beams of refractory metals, one for continuous beams and the other for pulsed beams.

  20. Growth of epitaxial films of sodium potassium tantalate and niobate on

    Office of Scientific and Technical Information (OSTI)

    single-crystal lanthanum aluminate [100] substrates (Journal Article) | SciTech Connect Growth of epitaxial films of sodium potassium tantalate and niobate on single-crystal lanthanum aluminate [100] substrates Citation Details In-Document Search Title: Growth of epitaxial films of sodium potassium tantalate and niobate on single-crystal lanthanum aluminate [100] substrates Epitaxial films of sodium potassium tantalate (Na{sub 0.5}K{sub 0.5}TaO{sub 3}, NKT) and sodium potassium niobate

  1. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mike Brady ed_barnard Joint Molecular Foundry/ALS Project Scientist mabrady@lbl.gov 510.486.6548

  2. Molecular Science

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Molecular Science NETL's Molecular Science competency provides technology-enabling computational and experimental insight into the atomic-level processes occurring in condensed matter and gas phase systems or at the heterogeneous surface-gas interfaces used for energy applications. Research includes molecular optimization as well as both classical and high-throughput material design, specifically: Molecular Optimization Development and application of new computational approaches in the general

  3. Neutral beam dump with cathodic arc titanium gettering

    SciTech Connect (OSTI)

    Smirnov, A.; Korepanov, S. A.; Putvinski, S.; Krivenko, A. S.; Murakhtin, S. V.; Savkin, V. Ya.

    2011-03-15

    An incomplete neutral beam capture can degrade the plasma performance in neutral beam driven plasma machines. The beam dumps mitigating the shine-through beam recycling must entrap and retain large particle loads while maintaining the beam-exposed surfaces clean of the residual impurities. The cathodic arc gettering, which provides high evaporation rate coupled with a fast time response, is a powerful and versatile technique for depositing clean getter films in vacuum. A compact neutral beam dump utilizing the titanium arc gettering was developed for a field-reversed configuration plasma sustained by 1 MW, 20-40 keV neutral hydrogen beams. The titanium evaporator features a new improved design. The beam dump is capable of handling large pulsed gas loads, has a high sorption capacity, and is robust and reliable. With the beam particle flux density of 5 x 10{sup 17} H/(cm{sup 2}s) sustained for 3-10 ms, the beam recycling coefficient, defined as twice the ratio of the hydrogen molecular flux leaving the beam dump to the incident flux of high-energy neutral atoms, is {approx}0.7. The use of the beam dump allows us to significantly reduce the recycling of the shine-through neutral beam as well as to improve the vacuum conditions in the machine.

  4. ION BEAM COLLIMATOR

    DOE Patents [OSTI]

    Langsdorf, A.S. Jr.

    1957-11-26

    A device is described for defining a beam of high energy particles wherein the means for defining the beam in the horizontal and vertical dimension are separately adjustable and the defining members are internally cooled. In general, the device comprises a mounting block having a central opening through which the beam is projected, means for rotatably supporting two pairs of beam- forming members, passages in each member for the flow of coolant; the beam- forming members being insulated from each other and the block, and each having an end projecting into the opening. The beam-forming members are adjustable and may be cooperatively positioned to define the beam passing between the end of the members. To assist in projecting and defining the beam, the member ends have individual means connected thereto for indicating the amount of charge collected thereon due to beam interception.

  5. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  6. Strain controlled metal-insulator transition in epitaxial NdNiO{sub 3} thin films

    SciTech Connect (OSTI)

    Xiang, P.-H. Zhong, N.; Duan, C.-G.; Tang, X. D.; Hu, Z. G.; Yang, P. X.; Zhu, Z. Q.; Chu, J. H.

    2013-12-28

    We have fabricated epitaxial thin films of NdNiO{sub 3} (NNO) on various single crystal substrates. The transport properties of NNO films are very sensitive to substrate-controlled epitaxial strain. As the strain varies from tensile to compressive, the Mott metal-insulator transition of NNO films shifts to low temperatures. Under a larger compressive strain, the film on LaSrAlO{sub 4} substrate exhibits a practically metallic transport characteristic. We have found that the conductivities of NNO films at low temperatures follow Mott's variable range hopping mechanism rather than thermal activation model and the epitaxial strain has a strong effect on Mott's parameters of NNO films. These findings demonstrate that the electronic transport of NNO thin films can be tuned by the epitaxial strain for next-generation perovskite-based microelectronic devices.

  7. Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

  8. Pyramid beam splitter

    DOE Patents [OSTI]

    McKeown, Mark H.; Beason, Steven C.; Fairer, George

    1992-01-01

    The apparatus of the present invention provides means for obtaining accurate, dependable, measurement of bearings and directions for geologic mapping in subterranean shafts, such as, for example, nuclear waste storage investigations. In operation, a laser beam is projected along a reference bearing. A pyramid is mounted such that the laser beam is parallel to the pyramid axis and can impinge on the apex of the pyramid thus splitting the beam several ways into several beams at right angles to each other and at right angles to the reference beam. The pyramid is also translatable and rotatable in a plane perpendicular to the reference beam.

  9. Beam position monitor

    DOE Patents [OSTI]

    Alkire, Randy W.; Rosenbaum, Gerold; Evans, Gwyndaf

    2003-07-22

    An apparatus for determining the position of an x-ray beam relative to a desired beam axis. Where the apparatus is positioned along the beam path so that a thin metal foil target intersects the x-ray beam generating fluorescent radiation. A PIN diode array is positioned so that a portion of the fluorescent radiation is intercepted by the array resulting in an a series of electrical signals from the PIN diodes making up the array. The signals are then analyzed and the position of the x-ray beam is determined relative to the desired beam path.

  10. Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to

    Office of Scientific and Technical Information (OSTI)

    Glass. (Journal Article) | SciTech Connect Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to Glass. Citation Details In-Document Search Title: Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to Glass. Abstract not provided. Authors: Biedermann, Laura ; Beechem Iii, Thomas Edwin ; Ohta, Taisuke ; Howell, Stephen Wayne ; Ross, Anthony J. III Publication Date: 2010-06-01 OSTI Identifier: 1142067 Report Number(s): SAND2010-4200J Journal ID: ISSN

  11. Epitaxial ternary nitride thin films prepared by a chemical solution method

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Epitaxial ternary nitride thin films prepared by a chemical solution method Citation Details In-Document Search Title: Epitaxial ternary nitride thin films prepared by a chemical solution method × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional

  12. Fermi Energy Tuning with Light to Control Doping Profiles During Epitaxy;

    Office of Scientific and Technical Information (OSTI)

    Article No. 182105 (Journal Article) | SciTech Connect Fermi Energy Tuning with Light to Control Doping Profiles During Epitaxy; Article No. 182105 Citation Details In-Document Search Title: Fermi Energy Tuning with Light to Control Doping Profiles During Epitaxy; Article No. 182105 Authors: Sanders, Charlotte E. ; Beaton, Daniel A. ; Reedy, Robert C. ; Alberi, Kristin Publication Date: 2015-05-04 OSTI Identifier: 1220719 Report Number(s): NREL/JA-5K00-64047 Resource Type: Journal Article

  13. Kinetics of oxygen surface exchange on epitaxial Ruddlesden-Popper phases

    Office of Scientific and Technical Information (OSTI)

    and correlations to first-principles descriptors (Journal Article) | SciTech Connect Kinetics of oxygen surface exchange on epitaxial Ruddlesden-Popper phases and correlations to first-principles descriptors Citation Details In-Document Search This content will become publicly available on December 17, 2016 Title: Kinetics of oxygen surface exchange on epitaxial Ruddlesden-Popper phases and correlations to first-principles descriptors Through alignment of theoretical modeling with

  14. LARGE-AREA EPITAXIAL GRAPHENE LAYER. (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Conference: LARGE-AREA EPITAXIAL GRAPHENE LAYER. Citation Details In-Document Search Title: LARGE-AREA EPITAXIAL GRAPHENE LAYER. Abstract not provided. Authors: Ohta, Taisuke Publication Date: 2015-01-01 OSTI Identifier: 1244915 Report Number(s): SAND2015-0261D 562156 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Proposed for presentation at the 2F hallway, building 897 in Albuquerque, NM. Research Org: Sandia National Laboratories (SNL-NM),

  15. Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN

    Office of Scientific and Technical Information (OSTI)

    Quantum Dots (Journal Article) | SciTech Connect Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots Citation Details In-Document Search Title: Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots Authors: Xiao, Xiaoyin ; Fischer, Arthur J. ; Wang, George T. ; Lu, Ping ; Koleske, Daniel D. ; Coltrin, Michael E. ; Wright, Jeremy B. ; Liu, Sheng ; Brener, Igal ; Subramania, Ganesh ; Tsao, Jeffrey Y. Publication Date:

  16. Phase-Controlled Electrochemical Activity of Epitaxial Spinel Thin films as

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mg-Cathodes - Joint Center for Energy Storage Research 7, 2015, Research Highlights Phase-Controlled Electrochemical Activity of Epitaxial Spinel Thin films as Mg-Cathodes Using epitaxial thin film methods, two polymorphs of MgMn2O4 (MMO) are stabilized in tetragonal (MMOT) and cubic (MMOC) phases. The MMOT thin film shows negligible activity with no structural changes, while MMOC (normally found at high temperature or high pressure) exhibits reversible Mg2+ activity with associated changes

  17. Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial Graphene

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial Graphene Citation Details In-Document Search Title: Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial Graphene Authors: Liu, Xiaolong ; Balla, Itamar ; Bergeron, Hadallia ; Campbell, Gavin P. ; Bedzyk, Michael J. ; Hersam, Mark C. [1] + Show Author Affiliations NWU Publication Date: 2016-03-04 OSTI Identifier: 1240188 Resource Type: Journal Article Resource Relation: Journal

  18. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    EVENTS ARCHIVE The Molecular Foundry regularly offers seminars and events that feature compelling research and information for those who investigate at the nanoscale. Seminars occur on Tuesdays at 11:00 am, in Building 67, Room 3111 unless otherwise noted. < seminars and events Molecular Foundry 10th Anniversary Symposium and Dinner On March 24, 2016, the Molecular Foundry will be celebrating the 10th anniversary of the dedication of its iconic building with a full day scientific symposium

  19. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Flatter and Faster: Transition Metal Dichalcogendies at the Molecular Foundry (Part II) Brain Imaging and Optical Manipulation Active Nanointerfaces for Electrochemistry SAXS-WAXS...

  20. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The abundance of interfaces allows the directing of transport for efficient energy storage and conversion. Electron donors and acceptors at interfaces Molecular level design and ...

  1. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... "'Thinking,' 'Exchanging,' and 'Making' necessary links in creating ground-breaking science inspired SmithGroup's design for the Molecular Foundry in Berkeley, California. The ...

  2. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The insight gained guides the design and optimization of new nanostructured materials for molecular-scale electronics, solar harvesting, water-splitting, carbon capture and ...

  3. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    31, 2016 Instrument Scheduler Nanofabrication Instrument Scheduler User Program The Molecular Foundry user program gives researchers access to expertise and equipment for...

  4. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Publications Advanced Materials Special Issue The Molecular Foundry publication database lists peer-reviewed work that has resulted from internal and user research. New...

  5. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Dmitry Soustin dmitry User Program Administrator dsoustin@lbl.gov 510.486.7687 Biography Dmitry Soustin is the Molecular Foundry's User Program Administrator. In this role, Dmitry...

  6. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Theory of Nanostructured Materials jbneaton@lbl.gov 510.486.4527 personal website Biography Jeffrey B. Neaton is Director of the Molecular Foundry, a Department of Energy...

  7. Beam Dynamics for ARIA

    SciTech Connect (OSTI)

    Ekdahl, Carl August Jr.

    2014-10-14

    Beam dynamics issues are assessed for a new linear induction electron accelerator being designed for flash radiography of large explosively driven hydrodynamic experiments. Special attention is paid to equilibrium beam transport, possible emittance growth, and beam stability. It is concluded that a radiographic quality beam will be produced possible if engineering standards and construction details are equivalent to those on the present radiography accelerators at Los Alamos.

  8. PARTICLE BEAM TRACKING CIRCUIT

    DOE Patents [OSTI]

    Anderson, O.A.

    1959-05-01

    >A particle-beam tracking and correcting circuit is described. Beam induction electrodes are placed on either side of the beam, and potentials induced by the beam are compared in a voltage comparator or discriminator. This comparison produces an error signal which modifies the fm curve at the voltage applied to the drift tube, thereby returning the orbit to the preferred position. The arrangement serves also to synchronize accelerating frequency and magnetic field growth. (T.R.H.)

  9. Reflection High-Energy Electron Diffraction Beam-Induced Structural and Property Changes on WO3 Thin Films

    SciTech Connect (OSTI)

    Du, Yingge; Zhang, Hongliang; Varga, Tamas; Chambers, Scott A.

    2014-08-08

    Reduction of transition metal oxides can greatly change their physical and chemical properties. Using deposition of WO3 as a case study, we demonstrate that reflection high-energy electron diffraction (RHEED), a surface-sensitive tool widely used to monitor thin-film deposition processes, can significantly affect the cation valence and physical properties of the films through electron-beam induced sample reduction. The RHEED beam is found to increase film smoothness during epitaxial growth of WO3, as well as change the electronic properties of the film through preferential removal of surface oxygen.

  10. Reflection high-energy electron diffraction beam-induced structural and property changes on WO{sub 3} thin films

    SciTech Connect (OSTI)

    Du, Y. Varga, T.; Zhang, K. H. L.; Chambers, S. A.

    2014-08-04

    Reduction of transition metal oxides can greatly change their physical and chemical properties. Using deposition of WO{sub 3} as a case study, we demonstrate that reflection high-energy electron diffraction (RHEED), a surface-sensitive tool widely used to monitor thin-film deposition processes, can significantly affect the cation valence and physical properties of the films through electron-beam induced sample reduction. The RHEED beam is found to increase film smoothness during epitaxial growth of WO{sub 3}, as well as change the electronic properties of the film through preferential removal of surface oxygen.

  11. Neutral beam monitoring

    DOE Patents [OSTI]

    Fink, Joel H. (Livermore, CA)

    1981-08-18

    Method and apparatus for monitoring characteristics of a high energy neutral beam. A neutral beam is generated by passing accelerated ions through a walled cell containing a low energy neutral gas, such that charge exchange neutralizes the high energy ion beam. The neutral beam is monitored by detecting the current flowing through the cell wall produced by low energy ions which drift to the wall after the charge exchange. By segmenting the wall into radial and longitudinal segments various beam conditions are further identified.

  12. BEAM CONTROL PROBE

    DOE Patents [OSTI]

    Chesterman, A.W.

    1959-03-17

    A probe is described for intercepting a desired portion of a beam of charged particles and for indicating the spatial disposition of the beam. The disclosed probe assembly includes a pair of pivotally mounted vanes moveable into a single plane with adjacent edges joining and a calibrated mechanical arrangement for pivoting the vancs apart. When the probe is disposed in the path of a charged particle beam, the vanes may be adjusted according to the beam current received in each vane to ascertain the dimension of the beam.

  13. Gated beam imager for heavy ion beams

    SciTech Connect (OSTI)

    Ahle, Larry; Hopkins, Harvey S.

    1998-12-10

    As part of the work building a small heavy-ion induction accelerator ring, or recirculator, at Lawrence Livermore National Laboratory, a diagnostic device measuring the four-dimensional transverse phase space of the beam in just a single pulse has been developed. This device, the Gated Beam Imager (GBI), consists of a thin plate filled with an array of 100-micron diameter holes and uses a Micro Channel Plate (MCP), a phosphor screen, and a CCD camera to image the beam particles that pass through the holes after they have drifted for a short distance. By time gating the MCP, the time evolution of the beam can also be measured, with each time step requiring a new pulse.

  14. Gated beam imager for heavy ion beams

    SciTech Connect (OSTI)

    Ahle, L.; Hopkins, H.S.

    1998-12-01

    As part of the work building a small heavy-ion induction accelerator ring, or recirculator, at Lawrence Livermore National Laboratory, a diagnostic device measuring the four-dimensional transverse phase space of the beam in just a single pulse has been developed. This device, the Gated Beam Imager (GBI), consists of a thin plate filled with an array of 100-micron diameter holes and uses a Micro Channel Plate (MCP), a phosphor screen, and a CCD camera to image the beam particles that pass through the holes after they have drifted for a short distance. By time gating the MCP, the time evolution of the beam can also be measured, with each time step requiring a new pulse. {copyright} {ital 1998 American Institute of Physics.}

  15. Site-controlled fabrication of Ga nanodroplets by focused ion beam

    SciTech Connect (OSTI)

    Xu, Xingliang; Wang, Zhiming M.; Wu, Jiang; Li, Handong; Zhou, Zhihua; Wang, Xiaodong

    2014-03-31

    Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

  16. Real-time observation of epitaxial graphene domain reorientation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thuermer, Konrad; Foster, Michael E.; Bartelt, Norman Charles; Rogge, Paul C.; Lawrence Berkeley National Lab.; McCarty, Kevin F.; Dubon, Oscar D.; Lawrence Berkeley National Lab.; Bartelt, Norman C.

    2015-04-20

    Graphene films grown by vapour deposition tend to be polycrystalline due to the nucleation and growth of islands with different in-plane orientations. Here, using low-energy electron microscopy, we find that micron-sized graphene islands on Ir(111) rotate to a preferred orientation during thermal annealing. We observe three alignment mechanisms: the simultaneous growth of aligned domains and dissolution of rotated domains, that is, ‘ripening’; domain boundary motion within islands; and continuous lattice rotation of entire domains. By measuring the relative growth velocity of domains during ripening, we estimate that the driving force for alignment is on the order of 0.1 meV permore » C atom and increases with rotation angle. A simple model of the orientation-dependent energy associated with the moiré corrugation of the graphene sheet due to local variations in the graphene–substrate interaction reproduces the results. This study suggests new strategies for improving the van der Waals epitaxy of 2D materials.« less

  17. Strain control of oxygen vacancies in epitaxial strontium cobaltite films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jeen, Hyoung Jeen; Choi, Woo Seok; Reboredo, Fernando A.; Freeland, John W.; Eres, Gyula; Lee, Ho Nyung; Petrie, Jonathan R.; Mitra, Chandrima; Meyer, Tricia L.

    2016-01-25

    In this study, the ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxial strain is a powerful tool for manipulating the oxygen vacancy concentration even under highly oxidizing environments and at annealing temperatures as low as 300 °C. By applying a small biaxial tensile strain (2%), the oxygen activation energy barrier decreases by ≈30%, resulting inmore » a tunable oxygen deficient steady-state under conditions that would normally fully oxidize unstrained cobaltite. These strain-induced changes in oxygen stoichiometry drive the cobaltite from a ferromagnetic metal towards an antiferromagnetic insulator. The ability to decouple the oxygen vacancy concentration from its typical dependence on the operational environment is useful for effectively designing oxides materials with a specific oxygen stoichiometry.« less

  18. Exceptional gettering response of epitaxially grown kerfless silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; Jensen, M. A.; Morishige, A. E.; Castellanos, S.; Lai, B.; Peaker, A. R.; Buonassisi, T.

    2016-02-08

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomeratesmore » at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.« less

  19. Controlled epitaxial graphene growth within removable amorphous carbon corrals

    SciTech Connect (OSTI)

    Palmer, James; Hu, Yike; Hankinson, John; Guo, Zelei; Heer, Walt A. de; Kunc, Jan; Berger, Claire

    2014-07-14

    We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200?C, mobile SiC steps accumulate at the aC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth at temperatures above 1330?C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.

  20. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Agenda March 24, 2016 Lawrence Berkeley National Laboratory AGENDA Registration 8:30 am - 9:00 am The Molecular Foundry's History and Impact 9:00 am - 10:30 am Jeff Neaton, Molecular Foundry Welcome Paul Alivisatos, Berkeley Lab/UC Berkeley The Creation of the Molecular Foundry Michael Witherell, Berkeley Lab Berkeley Lab Impact Brian Schowengerdt, Magic Leap Industry Impact Representative Mike Honda (D-CA) National Impact Break 10:30 am - 11:00 am Session 1: Functional Nanointerfaces 11:00 am -

  1. Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lee, Ho Nyung; Ambrose Seo, Sung S.; Choi, Woo Seok; Rouleau, Christopher M.

    2016-01-29

    In many transition metal oxides, oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a challenge. In this work, we show that, through proper control of the plume kinetic energy, stoichiometric crystalline films can be synthesized without generating oxygen defects even in high vacuum. We use a model homoepitaxial system of SrTiO3 (STO) thin films on singlemore » crystal STO substrates. Physical property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced by the energetics of the laser plume, and it can be controlled by proper laser beam delivery. Thus, our finding not only provides essential insight into oxygen stoichiometry control in high vacuum for understanding the fundamental properties of STO-based thin films and heterostructures, but it expands the utility of pulsed laser epitaxy of other materials as well.₃« less

  2. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems notmore » only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

  3. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in 1983 to maintain a forefront research center for electron microscopy with state-of-the-art instrumentation and expertise. Merged with the Molecular Foundry in 2014 to take...

  4. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Meg Holm Meg Senior Administrator mcholm@lbl.gov 510.486.5135 Biography Meg is the Molecular Foundry's Senior Administrator. In this role, she supervises the Foundry budget...

  5. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Alison Hatt allison User Program Director ajhatt@lbl.gov 510.486.7154 Biography Alison Hatt is the Director of the User Program at the Molecular Foundry and a former Foundry...

  6. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gil Torres Gil Torres gjtorres@lbl.gov 510.486.4395 Biography Gil is the Building Manager for MSD in buildings 62, 66, 2, 30, JCAP and the Molecular Foundry. Gil supports Foundry...

  7. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    See the Foundry's full equipment list Organic and Macromolecular Synthesis Capabilities & Tools Instrument Scheduler Major Instruments and Capabilities AB SCIEX TF4800 MALDI TOF-TOF Mass Spectrometer This instrument is the tandem time-of-flight mass spectrometer systems, providing the excellent level of molecular mass coverage in the range of molecular masses 500 and 150,000 Da, high throughput, and confidence in both qualitative and quantitative analyses. The analyzer combines all of the

  8. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Molecular Foundry Advanced Materials Special Issue Advanced Materials Cover Art The multidisciplinary science that is central to the Molecular Foundry's mission is well represented throughout the October 14, 2015 special issue of Advanced Materials. In three Review articles, we highlight recent areas of particular innovation and promise at the Foundry: the development of advanced electron tomography for both hard and soft materials with near-atomic resolution, the creation of designer biomimetic

  9. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Behzad Rad Rad Senior Scientific Engineering Associate, Biological Nanostructures BRad@lbl.gov 510.486.5795 Biography Education Postdoctoral Fellow Molecular Foundry Lawrence Berkeley National Labs Ph.D. in Biophysics University of California at Davis Dissertation Title: "The Unwinding Mechanism of the E. coli RecQ helicase" Dissertation Advisor: Dr. Stephen C. Kowalczykowski Bachelor's in Molecular and Cellular Biology University of California at Berkeley Expertise Behzad's interests

  10. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Media and Resources MEDIA Molecular Foundry Youtube Channel Berkeley Lab Youtube Channel Berkeley Lab Photo Archive Webcam The Molecular Foundry and its users benefit from its location at Berkeley Lab within the Bay Area's vibrant scientific ecosystem. The expansive views serve to fuel the imagination and build connections among the Foundry's diverse research community. Baycam Click here for a full screen view from our webcam. RESOURCES Style Guide PDF 308 KB Logos Signature Preferred 41 KB ZIP

  11. Giant Magneto-Resistance in Epitaxial (La0.7Sr0.3MnO3)0.5: (ZnO...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 77 NANOSCIENCE AND NANOTECHNOLOGY; CAI suggestions; ZINC OXIDES; MAGNETORESISTANCE; EPITAXY; NANOCOMPOSITES; ...

  12. Particle beam injection system

    DOE Patents [OSTI]

    Jassby, Daniel L.; Kulsrud, Russell M.

    1977-01-01

    This invention provides a poloidal divertor for stacking counterstreaming ion beams to provide high intensity colliding beams. To this end, method and apparatus are provided that inject high energy, high velocity, ordered, atomic deuterium and tritium beams into a lower energy, toroidal, thermal equilibrium, neutral, target plasma column that is magnetically confined along an endless magnetic axis in a strong restoring force magnetic field having helical field lines to produce counterstreaming deuteron and triton beams that are received bent, stacked and transported along the endless axis, while a poloidal divertor removes thermal ions and electrons all along the axis to increase the density of the counterstreaming ion beams and the reaction products resulting therefrom. By balancing the stacking and removal, colliding, strong focused particle beams, reaction products and reactions are produced that convert one form of energy into another form of energy.

  13. Beam Instrumentation Workshop

    SciTech Connect (OSTI)

    Shafer, R.E. )

    1994-01-01

    The fifth annual Beam Instrumentation Workshop was hosted by Los Alamos National Laboratory in Santa Fe, New Mexico. These proceedings represent the papers presented at the Workshop. A variety of topics were covered including beam emittance diagnostics, fluorescent screens, control systems for many accelerators and photon sources. Beam monitoring was discussed in great detail. There were thirty seven papers presented at the Workshop and all have been abstracted for the Energy and Science Technology database. (AIP)

  14. Beam Stability Complaint Form

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    For New Users For Current Users For Administrators MX Users APS User Portal APS Data Management Practices Find a Beamline Apply for Beam Time ESAF Contacts Calendars User...

  15. Broad beam ion implanter

    DOE Patents [OSTI]

    Leung, K.N.

    1996-10-08

    An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.

  16. Broad beam ion implanter

    DOE Patents [OSTI]

    Leung, Ka-Ngo

    1996-01-01

    An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.

  17. BEAMS: Curiosity | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BEAMS: Curiosity BEAMS: Curiosity January 9, 2013 BEAMS, Becoming Excited About Math and Science, is one of our education programs. In particular, it is the only one in which I participate with more than a ceremonial role. I try my best to pull my full share of BEAMS visits. Today was the first of the year, and it went really well. There were about a dozen middle school kids in my office, plus the teacher. Of course, the lab's education team ensures complete immersion by making themselves scarce

  18. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    DOE Patents [OSTI]

    Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M.

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  19. Decoupling of epitaxial graphene via gold intercalation probed by dispersive Raman spectroscopy

    SciTech Connect (OSTI)

    Pillai, P. B. E-mail: m.desouza@sheffield.ac.uk; DeSouza, M. E-mail: m.desouza@sheffield.ac.uk; Narula, R.; Reich, S.; Wong, L. Y.; Batten, T.; Pokorny, J.

    2015-05-14

    Signatures of a superlattice structure composed of a quasi periodic arrangement of atomic gold clusters below an epitaxied graphene (EG) layer are examined using dispersive Raman spectroscopy. The gold-graphene system exhibits a laser excitation energy dependant red shift of the 2D mode as compared to pristine epitaxial graphene. The phonon dispersions in both the systems are mapped using the experimentally observed Raman signatures and a third-nearest neighbour tight binding electronic band structure model. Our results reveal that the observed excitation dependent Raman red shift in gold EG primarily arise from the modifications of the phonon dispersion in gold-graphene and shows that the extent of decoupling of graphene from the underlying SiC substrate can be monitored from the dispersive nature of the Raman 2D modes. The intercalated gold atoms restore the phonon band structure of epitaxial graphene towards free standing graphene.

  20. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

    SciTech Connect (OSTI)

    Vinokurov, D. A.; Ladugin, M. A.; Lyutetskii, A. V.; Marmalyuk, A. A.; Petrunov, A. N.; Pikhtin, N. A.; Slipchenko, S. O. Sokolova, Z. N.; Stankevich, A. L.; Fetisova, N. V.; Shashkin, I. S.; Averkiev, N. S.; Tarasov, I. S.

    2010-06-15

    Epitaxially stacked tunnel-junction laser hetero structures were grown by hydride metalorganic vapor-phase epitaxy in the system of AlGaAs/GaAs/In GaAs alloys. Based on such structures, mesa stripe lasers with an aperture of 150 s- 7 m were fabricated. The possibility of controlling the lasing wavelength by varying the active region thickness in each tunnel-junction laser structure was demonstrated. Independent two-band lasing at wavelengths of 914 and 925 nm (the difference frequency is 2.3 THz) was achieved at a maximum optical radiation power of 20 W in each band of the epitaxially stacked tunnel-junction semiconductor laser.

  1. Structure-property correlation in epitaxial (2 0 0) rutile films on sapphire substrates

    SciTech Connect (OSTI)

    Bayati, M.R.; Joshi, Sh.; Molaei, R.; Narayan, R.J.; Narayan, J.

    2012-03-15

    We have investigated the influence of the deposition variables on photocatalytic properties of epitaxial rutile films. Despite a large lattice misfit of rutile with sapphire substrate, (2 0 0) epitaxial layers were grown on (0 0 0 1)sapphire by domain matching epitaxy paradigm. Using {phi}-scan XRD and cross section TEM, the epitaxial relationship was determined to be rutile(1 0 0)||sapphire(0 0 0 1), rutile(0 0 1)||sapphire(1 0 -1 0), and rutile(0 1 0)||sapphire(1 -2 1 0). Based on the XRD patterns, increasing the repetition rate introduced tensile stress along the film normal direction, which may arise as a result of trapped defects. Formation of such defects was studied by UV-VIS, PL, and XPS techniques. AFM studies showed that the film roughness increases with the repetition rate. Finally, photocatalytic performance of the layers was investigated through measuring decomposition rate of 4-chlorophenol on the films surface. The films grown at higher frequencies revealed higher photocatalytic efficiency. This behavior was mainly related to formation of point defects which enhance the charge separation. - Graphical abstract: In this report, epitaxial rutile TiO{sub 2} thin films were deposited by PLD process under various deposition rates (frequencies) and their physical and chemical properties, especially photocatalytic performance, were investigated. It was found that photocatalytic efficiency improves when frequency increases. This behavior was mainly related to formation of point defects which enhance the charge separation. Highlights: Black-Right-Pointing-Pointer Rutile epitaxial thin films were deposited via PLD process under different frequencies. Black-Right-Pointing-Pointer Defect characteristic was studied. Black-Right-Pointing-Pointer Photocatalytic performance of the layers was investigated.

  2. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Colin Ophus Project Scientist, NCEM clophus@lbl.gov 510.486.5663 Biography Colin Ophus received his PhD in Materials Engineering from the University of Alberta in Canada. There he studied the growth of polycrystalline and amorphous metal thin films with deposition experiments and simulations. He has used microfabrication techniques including physical and chemical vapor deposition, chemical etching, and optical and electron beam lithography. He is also proficient in analysis techniques including

  3. Structural and magnetic properties of stoichiometric epitaxial CoO/Fe

    Office of Scientific and Technical Information (OSTI)

    exchange-bias bilayers (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Structural and magnetic properties of stoichiometric epitaxial CoO/Fe exchange-bias bilayers Citation Details In-Document Search Title: Structural and magnetic properties of stoichiometric epitaxial CoO/Fe exchange-bias bilayers We present a detailed study of the magnetic and structural properties of the CoO/Fe bilayers by using a combination of x-ray diffraction (crystalline

  4. Process for forming epitaxial perovskite thin film layers using halide precursors

    DOE Patents [OSTI]

    Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

    2001-01-01

    A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

  5. PROJECT PROFILE: 2D Materials for Low Cost Epitaxial Growth of Single Sun

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Gallium Arsenide (GaAs) Photovoltaics | Department of Energy 2D Materials for Low Cost Epitaxial Growth of Single Sun Gallium Arsenide (GaAs) Photovoltaics PROJECT PROFILE: 2D Materials for Low Cost Epitaxial Growth of Single Sun Gallium Arsenide (GaAs) Photovoltaics Funding Opportunity: SuNLaMP SunShot Subprogram: Photovoltaics Location: National Renewable Energy Laboratory, Golden, CO SunShot Award Amount: $125,000 Low-cost III-V cells will result in a breakthrough in photovoltaic (PV)

  6. Surface photovoltage method for the quality control of silicon epitaxial layers on sapphire

    SciTech Connect (OSTI)

    Yaremchuk, A. F.; Starkov, A. V.; Zaikin, A. V., E-mail: lynch0000@gmail.com [National Rsearch University MIET (Russian Federation); Alekseev, A. V. [ZAO Telekom-STV (Russian Federation); Sokolov, E. M. [ZAO Epiel (Russian Federation)

    2014-12-15

    The surface photovoltage method is used to study silicon-on-sapphire epitaxial layers with a thickness of 0.30.6 ?m, which are used to fabricate p-channel MOS (metaloxide-semiconductor) transistors with improved radiation hardness. It is shown that the manner in which the photoconductivity of the epitaxial layer decays after the end of a light pulse generated by a light-emitting diode (wavelength ?400 nm) strongly depends on the density of structural defects in the bulk of the structure. This enables control over how a silicon-on-sapphire structure is formed to provide the manufacturing of MOS structures with optimal operating characteristics.

  7. Effect of substrate temperature on the magnetic properties of epitaxial sputter-grown Co/Pt

    SciTech Connect (OSTI)

    Mihai, A. P.; Whiteside, A. L.; Canwell, E. J.; Marrows, C. H.; Moore, T. A.; Benitez, M. J.; McGrouther, D.; McVitie, S.; McFadzean, S.

    2013-12-23

    Epitaxial Co/Pt films have been deposited by dc-magnetron sputtering onto heated C-plane sapphire substrates. X-ray diffraction, the residual resistivity, and transmission electron microscopy indicate that the Co/Pt films are highly ordered on the atomic scale. The coercive field and the perpendicular magnetic anisotropy increase as the substrate temperature is increased from 100250?C during deposition of the Co/Pt. Measurement of the domain wall creep velocity as a function of applied magnetic field yields the domain wall pinning energy, which scales with the coercive field. Evidence for an enhanced creep velocity in highly ordered epitaxial Co/Pt is found.

  8. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | DOE PAGES Accepted Manuscript: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films Title: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly

  9. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films Citation Details In-Document Search Title: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades,

  10. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films Citation Details In-Document Search Title: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional

  11. Role of carbon surface diffusion and strain on the epitaxial growth of

    Office of Scientific and Technical Information (OSTI)

    graphene on SiC(0001). (Conference) | SciTech Connect Role of carbon surface diffusion and strain on the epitaxial growth of graphene on SiC(0001). Citation Details In-Document Search Title: Role of carbon surface diffusion and strain on the epitaxial growth of graphene on SiC(0001). Abstract not provided. Authors: Ohta, Taisuke Publication Date: 2011-07-01 OSTI Identifier: 1120221 Report Number(s): SAND2011-5240C 482144 DOE Contract Number: DE-AC04-94AL85000 Resource Type: Conference

  12. Picosecond beam monitor

    DOE Patents [OSTI]

    Schutt, D.W.; Beck, G.O.

    1974-01-01

    The current in the beam of a particle accelerator is monitored with picosecond resolution by causing the beam to impinge upon the center conductor of a coaxial line, generating a pulse of electromagnetic energy in response thereto. This pulse is detected by means such as a sampling oscilloscope. (Official Gazette)

  13. Laser beam generating apparatus

    DOE Patents [OSTI]

    Warner, Bruce E. (Livermore, CA); Duncan, David B. (Auburn, CA)

    1994-01-01

    Laser beam generating apparatus including a septum segment disposed longitudinally within the tubular structure of the apparatus. The septum provides for radiatively dissipating heat buildup within the tubular structure and for generating relatively uniform laser beam pulses so as to minimize or eliminate radial pulse delays (the chevron effect).

  14. Laser beam generating apparatus

    DOE Patents [OSTI]

    Warner, Bruce E. (Livermore, CA); Duncan, David B. (Auburn, CA)

    1993-01-01

    Laser beam generating apparatus including a septum segment disposed longitudinally within the tubular structure of the apparatus. The septum provides for radiatively dissipating heat buildup within the tubular structure and for generating relatively uniform laser beam pulses so as to minimize or eliminate radial pulse delays (the chevron effect).

  15. Accelerators AND Beams

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Accelerators AND Beams TOOLS Of DiScOvery anD innOvaTiOn Published by the Division of Physics of Beams of the American Physical Society Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 . Why.care.about.accelerators?. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 . What.are.accelerators.for?. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 .

  16. Laser beam generating apparatus

    DOE Patents [OSTI]

    Warner, B.E.; Duncan, D.B.

    1994-02-15

    Laser beam generating apparatus including a septum segment disposed longitudinally within the tubular structure of the apparatus is described. The septum provides for radiatively dissipating heat buildup within the tubular structure and for generating relatively uniform laser beam pulses so as to minimize or eliminate radial pulse delays (the chevron effect). 7 figures.

  17. Laser beam generating apparatus

    DOE Patents [OSTI]

    Warner, B.E.; Duncan, D.B.

    1993-12-28

    Laser beam generating apparatus including a septum segment disposed longitudinally within the tubular structure of the apparatus. The septum provides for radiatively dissipating heat buildup within the tubular structure and for generating relatively uniform laser beam pulses so as to minimize or eliminate radial pulse delays (the chevron effect). 11 figures.

  18. Laser beam alignment system

    DOE Patents [OSTI]

    Kasner, William H.; Racki, Daniel J.; Swenson, Clark E.

    1984-01-01

    A plurality of pivotal reflectors direct a high-power laser beam onto a workpiece, and a rotatable reflector is movable to a position wherein it intercepts the beam and deflects a major portion thereof away from its normal path, the remainder of the beam passing to the pivotal reflectors through an aperture in the rotating reflector. A plurality of targets are movable to positions intercepting the path of light traveling to the pivotal reflectors, and a preliminary adjustment of the latter is made by use of a low-power laser beam reflected from the rotating reflector, after which the same targets are used to make a final adjustment of the pivotal reflectors with the portion of the high-power laser beam passed through the rotating reflector.

  19. Beam director design report

    SciTech Connect (OSTI)

    Younger, F.C.

    1986-08-01

    A design and fabrication effort for a beam director is documented. The conceptual design provides for the beam to pass first through a bending and focusing system (or ''achromat''), through a second achromat, through an air-to-vacuum interface (the ''beam window''), and finally through the vernier steering system. Following an initial concept study for a beam director, a prototype permanent magnet 30/sup 0/ beam-bending achromat and prototype vernier steering magnet were designed and built. In volume II, copies are included of the funding instruments, requests for quotations, purchase orders, a complete set of as-built drawings, magnetic measurement reports, the concept design report, and the final report on the design and fabrication project. (LEW)

  20. Cherenkov Light-based Beam Profiling for Ultrarelativistic Electron Beams

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Cherenkov Light-based Beam Profiling for Ultrarelativistic Electron Beams Citation Details In-Document Search Title: Cherenkov Light-based Beam Profiling for Ultrarelativistic Electron Beams We describe a beam profile monitor design based on Cherenkov light emitted from a charged particle beam in an air gap. The main components of the profile monitor are silicon wafers used to reflect Cherenkov light onto a camera lens system. The design allows for

  1. Electron Lens for Beam-Beam Compensation at LHC

    SciTech Connect (OSTI)

    Valishev, A.; Shiltsev, V.; /Fermilab

    2009-05-01

    Head-on beam-beam effect may become a major performance limitation for the LHC in some of the upgrade scenarios. Given the vast experience gained from the operation of Tevatron electron lenses, a similar device provides significant potential for mitigation of beam-beam effects at the LHC. In this report we present the results of simulation studies of beam-beam compensation and analyze potential application of electron lense at LHC and RHIC.

  2. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Liana Klivansky Klivansky Principal Scientific Engineering Associate, Organic and Macromolecular Synthesis LMKlivansky@lbl.gov 510.486.4199 Biography Education B.Sc.(HONS) Chemistry, Monash University, Victoria, Australia, 1990 Previous Professional Positions Principal Scientific Engineering Associate, Molecular Foundry, Lawrence Berkeley National Laboratory, 2006 - present Research Associate, Chiron Corp. Emeryville, CA, 1998 - 2006 Research Associate, Chiron Mimotopes, Victoria, Australia,

  3. STUDY OF ELECTRON -PROTON BEAM-BEAM INTERACTION IN ERHIC

    SciTech Connect (OSTI)

    HAO,Y.; LITVINENKO, V.N.; MONTAG, C.; POZDEYEV, E.; PTITSYN, V.

    2007-06-25

    Beam-beam effects present one of major factors limiting the luminosity of colliders. In the linac-ring option of eRHIC design, an electron beam accelerated in a superconducting energy recovery linac collides with a proton beam circulating in the RHIC ring. There are some features of beam-beam effects, which require careful examination in linac-ring configuration. First, the beam-beam interaction can induce specific head-tail type instability of the proton beam referred to as a ''kink'' instability. Thus, beam stability conditions should be established to avoid proton beam loss. Also, the electron beam transverse disruption by collisions has to be evaluated to ensure beam quality is good enough for the energy recovery pass. In addition, fluctuations of electron beam current and/or electron beam size, as well as transverse offset, can cause proton beam emittance growth. The tolerances for those factors should be determined and possible countermeasures should be developed to mitigate the emittance growth. In this paper, a soft Gaussian strong-strong simulation is used to study all of mentioned beam-beam interaction features and possible techniques to reduce the emittance growth.

  4. Epitaxial growth of intermetallic MnPt films on oxides and large exchange bias

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Zhiqi; Biegalski, Michael D.; Hsu, Shang-Lin; Shang, Shunli; Marker, Cassie; Liu, Jian; Li, Li; Fan, Lisha S.; Meyer, Tricia L.; Wong, Anthony T.; et al

    2015-11-05

    High-quality epitaxial growth of intermetallic MnPt films on oxides is achieved, with potential for multiferroic heterostructure applications. Antisite-stabilized spin-flipping induces ferromagnetism in MnPt films, although it is robustly antiferromagnetic in bulk. Thus, highly ordered antiferromagnetic MnPt films exhibit superiorly large exchange coupling with a ferromagnetic layer.

  5. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    DOE Patents [OSTI]

    Chang, Y. Austin; Yang, Jianhua Joshua

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  6. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

    DOE Patents [OSTI]

    Fan, John C. C.; Tsaur, Bor-Yeu; Gale, Ronald P.; Davis, Frances M.

    1992-02-25

    Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

  7. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

    DOE Patents [OSTI]

    Fan, John C. C.; Tsaur, Bor-Yeu; Gale, Ronald P.; Davis, Frances M.

    1986-12-30

    Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

  8. Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

    2012-06-01

    We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

  9. Ion beam lithography system

    DOE Patents [OSTI]

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  10. LEDA BEAM DIAGNOSTICS INSTRUMENTATION: BEAM POSITION MONITORS

    SciTech Connect (OSTI)

    D. BARR; ET AL

    2000-05-01

    The Low Energy Demonstration Accelerator (LEDA) facility located at Los Alamos National Laboratory (LANL) accelerates protons to an energy of 6.7-MeV and current of 100-mA operating in either a pulsed or cw mode. Of key importance to the commissioning and operations effort is the Beam Position Monitor system (BPM). The LEDA BPM system uses five micro-stripline beam position monitors processed by log ratio processing electronics with data acquisition via a series of custom TMS32OC40 Digital Signal Processing (DSP) boards. Of special interest to this paper is the operation of the system, the log ratio processing, and the system calibration technique. This paper will also cover the DSP system operations and their interaction with the main accelerator control system.

  11. B13+: Photodriven Molecular Wankel Engine

    SciTech Connect (OSTI)

    Zhang, Jin; Sergeeva, Alina P.; Sparta, Manuel; Alexandrova, Anastassia N.

    2012-07-09

    Synthetic molecular motors that are capable of delivering controlled movement upon energy input are one of the key building blocks in nanomachinery. The major energy sources of molecular motors are from chemical reactions, photon beams, or electric current, which are converted into mechanical forces through the excitation of the electronic states of the molecule. The energy scale of the electronic excitation is normally two orders of magnitude larger than the molecular vibrational frequencies. To reduce the heat dissipation and increase the energy utilization efficiency, a motor running purely on the electronic ground-state (GS) potential energy surfaces is highly desirable.

  12. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Branden Brough Branden Director of Strategy and External Relations bbrough@lbl.gov 510.486.4206 Biography Branden Brough is the Molecular Foundry's Director of Strategy and External Relations. In this role, Dr. Brough is responsible for the organization's strategic planning and management. He also facilitates internal and external communications to promote the Foundry's mission and showcase its accomplishments to the DOE, the nanoscience research community and the public. Before joining the

  13. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    David Prendergast David Prendergast Director, Theory of Nanostructured Materials dgprendergast@lbl.gov 510.486.4948 personal website Biography Education 2002 Ph.D., Physics, University College Cork, Ireland 1999 B.Sc., Physics and Mathematics, University College Cork, Ireland Research Interests My research focuses on employing and developing first-principles electronic structure theory and molecular dynamics simulations on high-performance computing infrastructure to reveal energy relevant

  14. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Emory Chan Brand Staff Scientist, Inorganic Nanostructures EMChan@lbl.gov 510.486.7874 personal website Biography Education Postdoctoral fellow, Molecular Foundry with Dr. Delia Milliron Ph. D., Chemistry, UC Berkeley with Prof. Paul Alivisatos and Prof. Richard Mathies, B. S., Chemistry, Stanford University with Prof. Hongjie Dai Expertise Dr. Chan's expertise lies in the combinatorial and high-throughput synthesis of colloidal inorganic nanoparticles. As part of the Foundry's Combinatorial

  15. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rita Garcia Brand Principal Research Associate, Biological Nanostructures Facility RLGarcia@lbl.gov 510.486.4125 Biography Education B.A. Molecular Biology, Scripps College, Claremont, CA, 2005 Previous Professional Positions Principal Research Associate, Lawrence Berkeley National Lab, Berkeley, CA, May 2009 - present Office Manager, Microsoft, San Francisco, CA, August 2008 - December 2008 Office Manager, Powerset, Inc., San Francisco, CA, January 2007 - July 2008 Post-Baccalaureate Intramural

  16. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tracy Mattox TMMattox Senior Scientific Engineering Associate, Inorganic Nanostructures TMMattox@lbl.gov 510.495.2649 Biography Education M.S. in Chemistry, Miami University, 2006 B.S. in Chemistry, University of Portland, 2003 Tracy Mattox has been a member of the Inorganic Facility at the Molecular Foundry as a Scientific Engineering Associate since 2007. Expertise Tracy's main focus is assisting users with their research projects (helping design reactions and analyze results). She is well

  17. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    User Guide Download the complete Users' Guide (PDF) Submit a Proposal Learn about the Molecular Foundry and its user program Explore Foundry capabilities and plan your proposal Prepare responses to proposal questions Create and submit your proposal through the online proposal portal After your proposal is approved* Complete secondary safety screening Become a badged LBNL "affiliate" Contact your assigned Foundry scientist When you arrive* Go to your appointment with the Affiliate

  18. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Molecular Foundry User Policies and Definitions Download the complete User Policies and Definitions (PDF) Guiding principles Safety Costs 50/50 staff time model User proposal types Proposal questions and evaluation criteria Proposal Review Board (PRB) and review process User agreements with Berkeley Lab Access to other user facilities at LBNL Final project report Publications and acknowledgement User feedback and end-of-project survey Users' Executive Committee (UEC) Scientific Advisory Board

  19. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Dinner On March 24, 2016, the Molecular Foundry celebrated the 10th anniversary of the dedication of its iconic building with a full day scientific symposium and dinner event. This celebration recognized the Foundry's major scientific and operational milestones and looked forward to the promising future of nanoscience. Leaders from Congress, DOE, academia, industry, and Berkeley Lab joined prominent Foundry users and staff, both past and present, to participate in this celebration.

  20. Neutral particle beam intensity controller

    DOE Patents [OSTI]

    Dagenhart, W.K.

    1984-05-29

    The neutral beam intensity controller is based on selected magnetic defocusing of the ion beam prior to neutralization. The defocused portion of the beam is dumped onto a beam dump disposed perpendicular to the beam axis. Selective defocusing is accomplished by means of a magnetic field generator disposed about the neutralizer so that the field is transverse to the beam axis. The magnetic field intensity is varied to provide the selected partial beam defocusing of the ions prior to neutralization. The desired focused neutral beam portion passes along the beam path through a defining aperture in the beam dump, thereby controlling the desired fraction of neutral particles transmitted to a utilization device without altering the kinetic energy level of the desired neutral particle fraction. By proper selection of the magnetic field intensity, virtually zero through 100% intensity control of the neutral beam is achieved.

  1. Beam! Magic! | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    with all the changes, the accelerator can be made to work. Beam Since my first serious introduction to nuclear and particle physics - when I worked for a few weeks one summer at...

  2. Focused ion beam system

    DOE Patents [OSTI]

    Leung, K.; Gough, R.A.; Ji, Q.; Lee, Y.Y.

    1999-08-31

    A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.

  3. Focused ion beam system

    DOE Patents [OSTI]

    Leung, Ka-Ngo; Gough, Richard A.; Ji, Qing; Lee, Yung-Hee Yvette

    1999-01-01

    A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.

  4. Photon beam position monitor

    DOE Patents [OSTI]

    Kuzay, Tuncer M.; Shu, Deming

    1995-01-01

    A photon beam position monitor for use in the front end of a beamline of a high heat flux and high energy photon source such as a synchrotron radiation storage ring detects and measures the position and, when a pair of such monitors are used in tandem, the slope of a photon beam emanating from an insertion device such as a wiggler or an undulator inserted in the straight sections of the ring. The photon beam position monitor includes a plurality of spaced blades for precisely locating the photon beam, with each blade comprised of chemical vapor deposition (CVD) diamond with an outer metal coating of a photon sensitive metal such as tungsten, molybdenum, etc., which combination emits electrons when a high energy photon beam is incident upon the blade. Two such monitors are contemplated for use in the front end of the beamline, with the two monitors having vertically and horizontally offset detector blades to avoid blade "shadowing". Provision is made for aligning the detector blades with the photon beam and limiting detector blade temperature during operation.

  5. Photon beam position monitor

    DOE Patents [OSTI]

    Kuzay, T.M.; Shu, D.

    1995-02-07

    A photon beam position monitor is disclosed for use in the front end of a beamline of a high heat flux and high energy photon source such as a synchrotron radiation storage ring detects and measures the position and, when a pair of such monitors are used in tandem, the slope of a photon beam emanating from an insertion device such as a wiggler or an undulator inserted in the straight sections of the ring. The photon beam position monitor includes a plurality of spaced blades for precisely locating the photon beam, with each blade comprised of chemical vapor deposition (CVD) diamond with an outer metal coating of a photon sensitive metal such as tungsten, molybdenum, etc., which combination emits electrons when a high energy photon beam is incident upon the blade. Two such monitors are contemplated for use in the front end of the beamline, with the two monitors having vertically and horizontally offset detector blades to avoid blade ''shadowing''. Provision is made for aligning the detector blades with the photon beam and limiting detector blade temperature during operation. 18 figs.

  6. Beam/seam alignment control for electron beam welding

    DOE Patents [OSTI]

    Burkhardt, Jr., James H.; Henry, J. James; Davenport, Clyde M.

    1980-01-01

    This invention relates to a dynamic beam/seam alignment control system for electron beam welds utilizing video apparatus. The system includes automatic control of workpiece illumination, near infrared illumination of the workpiece to limit the range of illumination and camera sensitivity adjustment, curve fitting of seam position data to obtain an accurate measure of beam/seam alignment, and automatic beam detection and calculation of the threshold beam level from the peak beam level of the preceding video line to locate the beam or seam edges.

  7. Metal/semiconductor phase transition in chromium nitride(001) grown by

    Office of Scientific and Technical Information (OSTI)

    rf-plasma-assisted molecular-beam epitaxy (Journal Article) | SciTech Connect Metal/semiconductor phase transition in chromium nitride(001) grown by rf-plasma-assisted molecular-beam epitaxy Citation Details In-Document Search Title: Metal/semiconductor phase transition in chromium nitride(001) grown by rf-plasma-assisted molecular-beam epitaxy Structural and electronic properties of stoichiometric single-phase CrN(001) thin films grown on MgO(001) substrates by radio-frequency N

  8. Photodetachment process for beam neutralization

    DOE Patents [OSTI]

    Fink, J.H.; Frank, A.M.

    1979-02-20

    A process for neutralization of accelerated ions employing photo-induced charge detachment is disclosed. The process involves directing a laser beam across the path of a negative ion beam such as to effect photodetachment of electrons from the beam ions. The frequency of the laser beam employed is selected to provide the maximum cross-section for the photodetachment process. 2 figs.

  9. Single element laser beam shaper

    DOE Patents [OSTI]

    Zhang, Shukui (Yorktown, VA); Michelle D. Shinn (Newport News, VA)

    2005-09-13

    A single lens laser beam shaper for converting laser beams from any spatial profile to a flat-top or uniform spatial profile. The laser beam shaper includes a lens having two aspheric surfaces. The beam shaper significantly simplifies the overall structure in comparison with conventional 2-element systems and therefore provides great ease in alignment and reduction of cost.

  10. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SEMINARS ARCHIVE The Molecular Foundry regularly offers seminars and events that feature compelling research and information for those who investigate at the nanoscale. Seminars occur on Tuesdays at 11:00 am, in Building 67, Room 3111 unless otherwise noted. < seminars and events Tuesday, May 10, 2016 at 11am On the Optical and Magnetic Properties of Ln3+ Based Nanoparticles for Bio-Imaging Frank van Veggel, University of Victoria [MORE] Tuesday, May 3, 2016 at 11am On the Nature of

  11. Molecular Foundry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Caroline M. Ajo-Franklin Ajo-Franklin Staff Scientist, Biological Nanostructures cajo-franklin@lbl.gov 510.486.4299 personal website Biography Dr. Ajo-Franklin has been a Staff Scientist at the Molecular Foundry since 2007. Before that, she received her Ph.D. in Chemistry from Stanford University with Prof. Steve Boxer and was a post-doctoral fellow with Prof. Pam Silver in the Department of Systems Biology at Harvard Medical School. Dr. Ajo-Franklin is fascinated by the incredible, diverse

  12. Light beam frequency comb generator

    DOE Patents [OSTI]

    Priatko, G.J.; Kaskey, J.A.

    1992-11-24

    A light beam frequency comb generator uses an acousto-optic modulator to generate a plurality of light beams with frequencies which are uniformly separated and possess common noise and drift characteristics. A well collimated monochromatic input light beam is passed through this modulator to produce a set of both frequency shifted and unshifted optical beams. An optical system directs one or more frequency shifted beams along a path which is parallel to the path of the input light beam such that the frequency shifted beams are made incident on the modulator proximate to but separated from the point of incidence of the input light beam. After the beam is thus returned to and passed through the modulator repeatedly, a plurality of mutually parallel beams are generated which are frequency-shifted different numbers of times and possess common noise and drift characteristics. 2 figs.

  13. Light beam frequency comb generator

    DOE Patents [OSTI]

    Priatko, Gordon J.; Kaskey, Jeffrey A.

    1992-01-01

    A light beam frequency comb generator uses an acousto-optic modulator to generate a plurality of light beams with frequencies which are uniformly separated and possess common noise and drift characteristics. A well collimated monochromatic input light beam is passed through this modulator to produce a set of both frequency shifted and unshifted optical beams. An optical system directs one or more frequency shifted beams along a path which is parallel to the path of the input light beam such that the frequency shifted beams are made incident on the modulator proximate to but separated from the point of incidence of the input light beam. After the beam is thus returned to and passed through the modulator repeatedly, a plurality of mutually parallel beams are generated which are frequency-shifted different numbers of times and possess common noise and drift characteristics.

  14. Graphene engineering by neon ion beams

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Iberi, Vighter; Ievlev, Anton V.; Vlassiouk, Ivan; Jesse, Stephen; Kalinin, Sergei V.; Joy, David C.; Rondinone, Adam J.; Belianinov, Alex; Ovchinnikova, Olga S.

    2016-02-18

    Achieving the ultimate limits of materials and device performance necessitates the engineering of matter with atomic, molecular, and mesoscale fidelity. While common for organic and macromolecular chemistry, these capabilities are virtually absent for 2D materials. In contrast to the undesired effect of ion implantation from focused ion beam (FIB) lithography with gallium ions, and proximity effects in standard e-beam lithography techniques, the shorter mean free path and interaction volumes of helium and neon ions offer a new route for clean, resist free nanofabrication. Furthermore, with the advent of scanning helium ion microscopy, maskless He+ and Ne+ beam lithography of graphenemore » based nanoelectronics is coming to the forefront. Here, we will discuss the use of energetic Ne ions in engineering graphene devices and explore the mechanical, electromechanical and chemical properties of the ion-milled devices using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we demonstrate that the mechanical, electrical and optical properties of the exact same devices can be quantitatively extracted. Additionally, the effect of defects inherent in ion beam direct-write lithography, on the overall performance of the fabricated devices is elucidated.« less

  15. Epitaxial patterning of nanometer-thick Y{sub 3}Fe{sub 5}O{sub...

    Office of Scientific and Technical Information (OSTI)

    Title: Epitaxial patterning of nanometer-thick Ysub 3Fesub 5Osub 12 films with low magnetic damping. Magnetic insulators such as yttrium iron garnet, Y3Fe5O12, with extremely ...

  16. Beam Characterizations at Femtosecond Electron Beam Facility

    SciTech Connect (OSTI)

    Rimjaem, S.; Jinamoon, V.; Kangrang, M.; Kusoljariyakul, K.; Saisut, J.; Thongbai, C.; Vilaithong, T.; Rhodes, M.W.; Wichaisirimongkol, P.; Wiedemann, H.; /SLAC

    2006-03-17

    The SURIYA project at the Fast Neutron Research Facility (FNRF) has been established and is being commissioning to generate femtosecond (fs) electron bunches. Theses short bunches are produced by a system consisting of an S-band thermionic cathode RF-gun, an alpha magnet (a-magnet) serving as a magnetic bunch compressor, and a SLAC-type linear accelerator (linac). The characteristics of its major components and the beam characterizations as well as the preliminary experimental results will be presented and discussed in this paper.

  17. ICFA Beam Dynamics Newsletter

    SciTech Connect (OSTI)

    Ben-Zvi I.; Kuczewski A.; Altinbas, Z.; Beavis, D.; Belomestnykh,; Dai, J. et al

    2012-07-01

    The Collider-Accelerator Department at Brookhaven National Laboratory is building a high-brightness 500 mA capable Energy Recovery Linac (ERL) as one of its main R&D thrusts towards eRHIC, the polarized electron - hadron collider as an upgrade of the operating RHIC facility. The ERL is in final assembly stages, with injection commisioning starting in October 2012. The objective of this ERL is to serve as a platform for R&D into high current ERL, in particular issues of halo generation and control, Higher-Order Mode (HOM) issues, coherent emissions for the beam and high-brightness, high-power beam generation and preservation. The R&D ERL features a superconducting laser-photocathode RF gun with a high quantum efficiency photoccathode served with a load-lock cathode delivery system, a highly damped 5-cell accelerating cavity, a highly flexible single-pass loop and a comprehensive system of beam instrumentation. In this ICFA Beam Dynamics Newsletter article we will describe the ERL in a degree of detail that is not usually found in regular publications. We will discuss the various systems of the ERL, following the electrons from the photocathode to the beam dump, cover the control system, machine protection etc and summarize with the status of the ERL systems.

  18. Ion Beam Simulator

    Energy Science and Technology Software Center (OSTI)

    2005-11-08

    IBSimu(Ion Beam Simulator) is a computer program for making two and three dimensional ion optical simulations. The program can solve electrostatic field in a rectangular mesh using Poisson equation using Finite Difference method (FDM). The mesh can consist of a coarse and a fine part so that the calculation accuracy can be increased in critical areas of the geometry, while most of the calculation is done quickly using the coarse mesh. IBSimu can launch ionmore » beam trajectories into the simulation from an injection surface or fomo plasma. Ion beam space charge of time independent simulations can be taken in account using Viasov iteration. Plasma is calculated by compensating space charge with electrons having Boltzmann energy distribution. The simulation software can also be used to calculate time dependent cases if the space charge is not calculated. Software includes diagnostic tools for plotting the geometry, electric field, space charge map, ion beam trajectories, emittance data and beam profiles.« less

  19. LHC beam-beam compensation studies at RHIC

    SciTech Connect (OSTI)

    Fischer,W.; Abreu, N.; Calaga, R.; Robert-Demolaize, G.; Luo, Y.; Montag, C.

    2009-05-04

    Long-range and head-on beam-beam effects are expected to limit the LHC performance with design parameters. To mitigate long-range effects current carrying wires parallel to the beam were proposed. Two such wires are installed in RHIC where they allow studying the effect of strong long-range beam-beam effects, as well as the compensation of a single long-range interaction. The tests provide benchmark data for simulations and analytical treatments. To reduce the head-on beam-beam effect electron lenses were proposed for both the LHC and RHIC. We present the experimental long-range beam-beam program and report on head-on compensations studies at RHIC, which are based on simulations.

  20. Beam-beam observations in the Relativistic Heavy Ion Collider

    SciTech Connect (OSTI)

    Luo, Y.; Fischer, W.; White, S.

    2015-06-24

    The Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory has been operating since 2000. Over the past decade, thanks to the continuously increased bunch intensity and reduced β*s at the interaction points, the maximum peak luminosity in the polarized proton operation has been increased by more than two orders of magnitude. In this article, we first present the beam-beam observations in the previous RHIC polarized proton runs. Then we analyze the mechanisms for the beam loss and emittance growth in the presence of beam-beam interaction. The operational challenges and limitations imposed by beam-beam interaction and their remedies are also presented. In the end, we briefly introduce head-on beam-beam compensation with electron lenses in RHIC.

  1. Reactions of carbon atoms in pulsed molecular beams

    SciTech Connect (OSTI)

    Reisler, H.

    1993-12-01

    This research program consists of a broad scope of experiments designed to unravel the chemistry of atomic carbon in its two spin states, P and D, by using well-controlled initial conditions and state-resolved detection of products. Prerequisite to the proposed studies (and the reason why so little is known about carbon atom reactions), is the development of clean sources of carbon atoms. Therefore, in parallel with the studies of its chemistry and reaction dynamics, the authors continuously explore new, state-specific and efficient ways of producing atomic carbon. In the current program, C({sup 3}P) is produced via laser ablation of graphite, and three areas of study are being pursued: (i) exothermic reactions with small inorganic molecules (e.g., O{sub 2}, N{sub 2}O, NO{sub 2}) that can proceed via multiple pathways; (ii) the influence of vibrational and translational energy on endothermic reactions involving H-containing reactants that yield CH products (e.g., H{sub 2}O H{sub 2}CO); (iii) reactions of C({sup 3}P) with free radicals (e.g., HCO, CH{sub 3}O). In addition, the authors plan to develop a source of C({sup 1}D) atoms by exploiting the pyrolysis of diazotetrazole and its salts in the ablation source. Another important goal involves collaboration with theoreticians in order to obtain relevant potential energy surfaces, rationalize the experimental results and predict the roles of translational and vibrational energies.

  2. Beam Profile Monitor With Accurate Horizontal And Vertical Beam Profiles

    DOE Patents [OSTI]

    Havener, Charles C [Knoxville, TN; Al-Rejoub, Riad [Oak Ridge, TN

    2005-12-26

    A widely used scanner device that rotates a single helically shaped wire probe in and out of a particle beam at different beamline positions to give a pair of mutually perpendicular beam profiles is modified by the addition of a second wire probe. As a result, a pair of mutually perpendicular beam profiles is obtained at a first beamline position, and a second pair of mutually perpendicular beam profiles is obtained at a second beamline position. The simple modification not only provides more accurate beam profiles, but also provides a measurement of the beam divergence and quality in a single compact device.

  3. SSRL BEAM PORT SCHEDULE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7-1 Nov. 09, 2015 Nov. 10, 2015 Nov. 11, 2015 Nov. 12, 2015 Nov. 13, 2015 Nov. 14, 2015 Nov. 15, 2015 DOWN DOWN DOWN DOWN DOWN STUP STUP DOWN DOWN DOWN DOWN STUP STUP STUP DOWN DOWN DOWN DOWN STUP STUP STUP BEAM LINE 9-2 Nov. 09, 2015 Nov. 10, 2015 Nov. 11, 2015 Nov. 12, 2015 Nov. 13, 2015 Nov. 14, 2015 Nov. 15, 2015 DOWN DOWN DOWN DOWN DOWN STUP STUP DOWN DOWN DOWN DOWN STUP STUP STUP DOWN DOWN DOWN DOWN STUP STUP STUP BEAM LINE 11-1 Nov. 09, 2015 Nov. 10, 2015 Nov. 11, 2015 Nov. 12, 2015 Nov.

  4. SSRL BEAM PORT SCHEDULE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5-4 Nov. 09, 2015 Nov. 10, 2015 Nov. 11, 2015 Nov. 12, 2015 Nov. 13, 2015 Nov. 14, 2015 Nov. 15, 2015 DOWN DOWN DOWN DOWN DOWN STUP STUP DOWN DOWN DOWN DOWN STUP STUP STUP DOWN DOWN DOWN DOWN STUP STUP STUP BEAM LINE 8-2 Nov. 09, 2015 Nov. 10, 2015 Nov. 11, 2015 Nov. 12, 2015 Nov. 13, 2015 Nov. 14, 2015 Nov. 15, 2015 DOWN DOWN DOWN DOWN DOWN STUP STUP DOWN DOWN DOWN DOWN STUP STUP STUP DOWN DOWN DOWN DOWN STUP STUP STUP BEAM LINE 10-1 Nov. 09, 2015 Nov. 10, 2015 Nov. 11, 2015 Nov. 12, 2015 Nov.

  5. SSRL BEAM PORT SCHEDULE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1-5 Nov. 05, 2007 Nov. 06, 2007 Nov. 07, 2007 Nov. 08, 2007 Nov. 09, 2007 Nov. 10, 2007 Nov. 11, 2007 Unscheduled FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI BEAM LINE 7-1 Nov. 05, 2007 Nov. 06, 2007 Nov. 07, 2007 Nov. 08, 2007 Nov. 09, 2007 Nov. 10, 2007 Nov. 11, 2007 Unscheduled FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI BEAM LINE 9-1 Nov. 05, 2007 Nov. 06, 2007 Nov. 07, 2007 Nov.

  6. SSRL BEAM PORT SCHEDULE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Back to Table of Contents WEEK OF Nov. 17, 2014 Nov. 17, 2014 Nov. 18, 2014 Nov. 19, 2014 Nov. 20, 2014 Nov. 21, 2014 Nov. 22, 2014 Nov. 23, 2014 BEAM LINE 7-1 Nov. 17, 2014 Nov. 18, 2014 Nov. 19, 2014 Nov. 20, 2014 Nov. 21, 2014 Nov. 22, 2014 Nov. 23, 2014 Unscheduled STUP STUP STUP STUP STUP STUP STUP STUP STUP STUP STUP STUP STUP STUP STUP STUP STUP STUP STUP STUP BEAM LINE 11-1 Nov. 17, 2014 Nov. 18, 2014 Nov. 19, 2014 Nov. 20, 2014 Nov. 21, 2014 Nov. 22, 2014 Nov. 23, 2014 Unscheduled STUP

  7. SSRL BEAM PORT SCHEDULE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1-5 Nov. 10, 2008 Nov. 11, 2008 Nov. 12, 2008 Nov. 13, 2008 Nov. 14, 2008 Nov. 15, 2008 Nov. 16, 2008 DOWN FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI BEAM LINE 7-1 Nov. 10, 2008 Nov. 11, 2008 Nov. 12, 2008 Nov. 13, 2008 Nov. 14, 2008 Nov. 15, 2008 Nov. 16, 2008 DOWN FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI FACI BEAM LINE 9-1 Nov. 10, 2008 Nov. 11, 2008 Nov. 12, 2008 Nov. 13, 2008 Nov.

  8. Beam characteristics of energy-matched flattening filter free beams

    SciTech Connect (OSTI)

    Paynter, D.; Weston, S. J.; Cosgrove, V. P.; Evans, J. A.; Thwaites, D. I.

    2014-05-15

    Purpose: Flattening filter free (FFF) linear accelerators can increase treatment efficiency and plan quality. There are multiple methods of defining a FFF beam. The Elekta control system supports tuning of the delivered FFF beam energy to enable matching of the percentage depth-dose (PDD) of the flattened beam at 10 cm depth. This is compared to FFF beams where the linac control parameters are identical to those for the flattened beam. All beams were delivered on an Elekta Synergy accelerator with an Agility multi-leaf collimator installed and compared to the standard, flattened beam. The aim of this study is to compare “matched” FFF beams to both “unmatched” FFF beams and flattened beams to determine the benefits of matching beams. Methods: For the three modes of operation 6 MV flattened, 6 MV matched FFF, 6 MV unmatched FFF, 10 MV flattened, 10 MV matched FFF, and 10 MV unmatched FFF beam profiles were obtained using a plotting tank and were measured in steps of 0.1 mm in the penumbral region. Beam penumbra was defined as the distance between the 80% and 20% of the normalized dose when the inflection points of the unflattened and flattened profiles were normalized with the central axis dose of the flattened field set as 100%. PDD data was obtained at field sizes ranging from 3 cm × 3 cm to 40 cm × 40 cm. Radiation protection measurements were additionally performed to determine the head leakage and environmental monitoring through the maze and primary barriers. Results: No significant change is made to the beam penumbra for FFF beams with and without PDD matching, the maximum change in penumbra for a 10 cm × 10 cm field was within the experimental error of the study. The changes in the profile shape with increasing field size are most significant for the matched FFF beam, and both FFF beams showed less profile shape variation with increasing depth when compared to flattened beams, due to consistency in beam energy spectra across the radiation field. The PDDs of the FFF beams showed less variation with field size, the d{sub max} value was deeper for the matched FFF beam than the FFF beam and deeper than the flattened beam for field sizes greater than 5 cm × 5 cm. The head leakage when using the machine in FFF mode is less than half that for a flattened beam, but comparable for both FFF modes. The radiation protection dose-rate measurements show an increase of instantaneous dose-rates when operating the machines in FFF mode but that increase is less than the ratio of MU/min produced by the machine. Conclusions: The matching of a FFF beam to a flattened beam at a depth of 10 cm in water by increasing the FFF beam energy does not reduce any of the reported benefits of FFF beams. Conversely, there are a number of potential benefits resulting from matching the FFF beam; the depth of maximum dose is deeper, the out of field dose is potentially reduced, and the beam quality and penetration more closely resembles the flattened beams currently used in clinical practice, making dose distributions in water more alike. Highlighted in this work is the fact that some conventional specifications and methods for measurement of beam parameters such as penumbra are not relevant and further work is required to address this situation with respect to “matched” FFF beams and to determine methods of measurement that are not reliant on an associated flattened beam.

  9. Pseudorotational epitaxy of self-assembled octadecyltrichlorosilane monolayers on sapphire (0001)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Steinrück, H. -G.; Magerl, A.; Deutsch, M.; Ocko, B. M.

    2014-10-06

    The structure of octadecyltrichlorosilane self-assembled monolayers (SAMs) on sapphire (0001) was studied by Å-resolution surface-specific x-ray scattering methods. The monolayer was found to consist of three sublayers where the outermost layer corresponds to vertically oriented, closely packed alkyl tails. Laterally, the monolayer is hexagonally packed and exhibits pseudorotational epitaxy to the sapphire, manifested by a broad scattering peak at zero relative azimuthal rotation, with long powderlike tails. The lattice mismatch of ~1% – 3% to the sapphire’s and the different length scale introduced by the lateral Si-O-Si bonding prohibit positional epitaxy. However, the substrate induces an intriguing increase in themore » crystalline coherence length of the SAM’s powderlike crystallites when rotationally aligned with the sapphire’s lattice. As a result, the increase correlates well with the rotational dependence of the separation of corresponding substrate-monolayer lattice sites.« less

  10. Thermal generation of spin current in epitaxial CoFe2O4 thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Guo, Er -Jia; Herklotz, Andreas; Kehlberger, Andreas; Cramer, Joel; Jakob, Gerhard; Klaeui, Mathias

    2016-01-12

    The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe2O4 (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect (ISHE). The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of –100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally generated magnons decreases. Moreover, we demonstrate that the spin Seebeckmore » effect is an effective tool to study the magnetic anisotropy induced by epitaxial strain, especially in ultrathin films with low magnetic moments.« less

  11. Pseudo-rotational epitaxy of self-assembled octadecyltrichlorosilane monolayers on sapphire (0001)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Steinruck, H. -G.; Ocko, B. M.; Magerl, A.; Deutsch, M.

    2014-10-06

    The structure of octadecyltrichlorosilane self-assembled monolayers (SAMs) on sapphire (0001) was studied by -resolution surface-specific x-ray scattering methods. The monolayer was found to consist of three sublayers where the outermost layer corresponds to vertically oriented, closely packed alkyl tails. Laterally, the monolayer is hexagonally packed and exhibits pseudorotational epitaxy to the sapphire, manifested by a broad scattering peak at zero relative azimuthal rotation, with long powderlike tails. The lattice mismatch of ~1% 3% to the sapphires and the different length scale introduced by the lateral Si-O-Si bonding prohibit positional epitaxy. However, the substrate induces an intriguing increase in themorecrystalline coherence length of the SAMs powderlike crystallites when rotationally aligned with the sapphires lattice. The increase correlates well with the rotational dependence of the separation of corresponding substrate-monolayer lattice sites.less

  12. Method utilizing laser-processing for the growth of epitaxial p-n junctions

    DOE Patents [OSTI]

    Young, R.T.; Narayan, J.; Wood, R.F.

    1979-11-23

    This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

  13. Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)

    SciTech Connect (OSTI)

    Sanders, Charlotte E.; Zhang, Chendong D.; Kellogg, Gary L.; Shih, Chih-Kang

    2014-08-01

    Epitaxially grown silver (Ag) film on silicon (Si) is an optimal plasmonic device platform, but its technological utility has been limited by its tendency to dewet rapidly under ambient conditions (standard temperature and pressure). The mechanisms driving this dewetting have not heretofore been determined. In our study, scanning probe microscopy and low-energy electron microscopy are used to compare the morphological evolution of epitaxial Ag(111)/Si(111) under ambient conditions with that of similarly prepared films heated under ultra-high vacuum (UHV) conditions. Furthermore, dewetting is seen to be initiated with the formation of pinholes, which might function to relieve strain in the film. We find that in the UHV environment, dewetting is determined by thermal processes, and while under ambient conditions, thermal processes are not required. Finally, we conclude that dewetting in ambient conditions is triggered by some chemical process, most likely oxidation.

  14. Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sanders, Charlotte E.; Zhang, Chendong D.; Kellogg, Gary L.; Shih, Chih-Kang

    2014-08-01

    Epitaxially grown silver (Ag) film on silicon (Si) is an optimal plasmonic device platform, but its technological utility has been limited by its tendency to dewet rapidly under ambient conditions (standard temperature and pressure). The mechanisms driving this dewetting have not heretofore been determined. In our study, scanning probe microscopy and low-energy electron microscopy are used to compare the morphological evolution of epitaxial Ag(111)/Si(111) under ambient conditions with that of similarly prepared films heated under ultra-high vacuum (UHV) conditions. Furthermore, dewetting is seen to be initiated with the formation of pinholes, which might function to relieve strain in the film.more » We find that in the UHV environment, dewetting is determined by thermal processes, and while under ambient conditions, thermal processes are not required. Finally, we conclude that dewetting in ambient conditions is triggered by some chemical process, most likely oxidation.« less

  15. Thin film GaAs solar cells on glass substrates by epitaxial liftoff

    SciTech Connect (OSTI)

    Lee, X.Y.; Goertemiller, M.; Boroditsky, M.; Ragan, R.; Yablonovitch, E.

    1997-02-01

    In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

  16. Suitability of epitaxial GaAs for x-ray imaging

    SciTech Connect (OSTI)

    Sun, G.C.; Talbi, N.; Verdeil, C.; Bourgoin, J.C.

    2004-09-20

    Because the rate of indirect photon-electron conversion for scintillator materials coupled with arrays of photodiodes is at least 25 times smaller than the rate of direct conversion, we examine the conditions to be fulfilled by semiconductors undergoing such direct conversion to be applied to x-ray imaging. Bulk grown materials are not well suited to this application, because large defect concentrations give rise to strongly nonuniform electronic properties. We argue that only epitaxial layers are suitable for use as imaging devices and we illustrate our argument using the case of thick epitaxial GaAs layers. Detectors made with such layers exhibit a good energy resolution, a charge collection efficiency which approaches 1, linearity over more than three orders of amplitude, no afterglow (a response time shorter than 20 {mu}s), and no charge-induced polarization effects.

  17. Pseudorotational epitaxy of self-assembled octadecyltrichlorosilane monolayers on sapphire (0001)

    SciTech Connect (OSTI)

    Steinrück, H. -G.; Magerl, A.; Deutsch, M.; Ocko, B. M.

    2014-10-06

    The structure of octadecyltrichlorosilane self-assembled monolayers (SAMs) on sapphire (0001) was studied by Å-resolution surface-specific x-ray scattering methods. The monolayer was found to consist of three sublayers where the outermost layer corresponds to vertically oriented, closely packed alkyl tails. Laterally, the monolayer is hexagonally packed and exhibits pseudorotational epitaxy to the sapphire, manifested by a broad scattering peak at zero relative azimuthal rotation, with long powderlike tails. The lattice mismatch of ~1% – 3% to the sapphire’s and the different length scale introduced by the lateral Si-O-Si bonding prohibit positional epitaxy. However, the substrate induces an intriguing increase in the crystalline coherence length of the SAM’s powderlike crystallites when rotationally aligned with the sapphire’s lattice. As a result, the increase correlates well with the rotational dependence of the separation of corresponding substrate-monolayer lattice sites.

  18. Process for growing a film epitaxially upon an oxide surface and structures formed with the process

    DOE Patents [OSTI]

    McKee, Rodney Allen; Walker, Frederick Joseph

    1998-01-01

    A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  19. Process for growing a film epitaxially upon an oxide surface and structures formed with the process

    DOE Patents [OSTI]

    McKee, Rodney A.; Walker, Frederick J.

    1995-01-01

    A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  20. Beam position monitor sensitivity for low-{beta} beams

    SciTech Connect (OSTI)

    Shafer, R.E.

    1993-11-01

    At low velocities, the EM field of a particle in a conducting beam tube is no longer a TEM wave, but has a finite longitudinal extent. The net effect of this is to reduce the coupling of the high-frequency Fourier components of the beam current to BPM (beam position monitor) electrodes, which modifies the BPM sensitivity to beam displacement. This effect is especially pronounced for high-frequency, large-aperture pickups used for low-{beta} beams. Non-interceptive beam position monitors used in conjunction with high frequency RFQ (radio-frequency-quadrupole) and DTL (drift-tube-linac) accelerators fall into this category. When testing a BPM with a thin wire excited with either pulses or high-frequency sinusoidal currents, the EM wave represents the principal (TEM) mode in a coaxial transmission line, which is equivalent to a highly relativistic ({beta} = 1) beam. Thus wire measurements are not suitable for simulating slow particle beams in high bandwidth diagnostic devices that couple to the image currents in the beam tube wall. Attempts to load the tin wire either capacitively or inductively to slow the EM wave down have met with limited success. In general, the equations used to represent the 2-D response of cylindrical-geometry BPMs to charged-particle beams make several assumptions: (1) the BPM electrodes are flush with and grounded to the surface of the conducting beam tube; (2) the beam is a line source (pencil beam); (3) the longitudinal extent of the EM field of a beam particle at the beam tube wall is zero, corresponding to a highly relativistic beam. The purpose of this paper is to make some quantitative estimates of the corrections to the conventional approximations when a BPM is used to measure the position of low velocity (low-{beta}) beams.

  1. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

    DOE Patents [OSTI]

    Wang, George T.; Li, Qiming; Creighton, J. Randall

    2010-03-02

    A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

  2. Veeco Develops a Tool to Reduce Epitaxy Costs and Increase LED Brightness

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Veeco is working on reducing epitaxy costs and increasing LED efficiency by developing a physical vapor deposition (PVD) tool for depositing aluminum nitride buffer layers on LED substrates. PVD, also known as "sputtering," is an alternative to metal-organic chemical vapor deposition (MOCVD). PVD is a purely physical process that involves plasma sputter bombardment rather than a chemical reaction at the surface to be coated, as in MOCVD.

  3. Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces

    DOE Patents [OSTI]

    Li, Qiming; Wang, George T

    2015-01-13

    A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.

  4. Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large Sharp

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Magnetoelectric Effect | Energy Frontier Research Centers Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large Sharp Magnetoelectric Effect Home Author: B. Liu, T. Sun, J. He, V. P. Dravid Year: 2010 Abstract: Nanostructures of multiferroic materials have drawn increasing interest due to the enhanced magnetoelectric coupling and potential for next-generation multifunctional devices. Most of these structures are typically prepared by thin film evaporation approaches. Herein, however,

  5. High-energy accelerator for beams of heavy ions

    DOE Patents [OSTI]

    Martin, Ronald L. (La Grange, IL); Arnold, Richard C. (Chicago, IL)

    1978-01-01

    An apparatus for accelerating heavy ions to high energies and directing the accelerated ions at a target comprises a source of singly ionized heavy ions of an element or compound of greater than 100 atomic mass units, means for accelerating the heavy ions, a storage ring for accumulating the accelerated heavy ions and switching means for switching the heavy ions from the storage ring to strike a target substantially simultaneously from a plurality of directions. In a particular embodiment the heavy ion that is accelerated is singly ionized hydrogen iodide. After acceleration, if the beam is of molecular ions, the ions are dissociated to leave an accelerated singly ionized atomic ion in a beam. Extraction of the beam may be accomplished by stripping all the electrons from the atomic ion to switch the beam from the storage ring by bending it in magnetic field of the storage ring.

  6. The correlation of epitaxial graphene properties and morphology of SiC (0001)

    SciTech Connect (OSTI)

    Guo, Y.; Guo, L. W., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn; Huang, J.; Jia, Y. P.; Lin, J. J.; Lu, W.; Li, Z. L. [Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, R. [Nanoscale Physics and Devices Laboratory, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Chen, X. L., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn [Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2014-01-28

    The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 23 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.

  7. Beam imaging diagnostics for heavy ion beam fusion experiments

    SciTech Connect (OSTI)

    Bieniosek, F.M.; Prost, L.; Ghiorso, W.

    2003-05-01

    We are developing techniques for imaging beams in heavy-ion beam fusion experiments in the HIF-VNL in 2 to 4 transverse dimensions. The beams in current experiments range in energy from 50 keV to 2 MeV, with beam current densities from <10 to 200 mA/cm{sup 2}, and pulse lengths of 4 to 20 {micro}s. The beam energy will range up to 10 MeV in near-future beam experiments. The imaging techniques, based on kapton films and optical scintillators, complement and, in some cases, may replace mechanical slit scanners. The kapton film images represent a time-integrated image on the film exposed to the beam. The optical scintillator utilizes glass and ceramic scintillator material imaged by a fast, image-intensified CCD-based camera. We will discuss the techniques, results, and plans for implementation of the diagnostics on the beam experiments.

  8. SSRL Beam Lines Map | Stanford Synchrotron Radiation Lightsource

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SSRL Beam Lines Map Beam Line by Number | Beam Line by Techniques | Photon Source Parameters

  9. SSRL BEAM PORT SCHEDULE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... BEAM LINE 8-2 Mar. 18, 2013 Mar. 19, 2013 Mar. 20, 2013 Mar. 21, 2013 Mar. 22, 2013 Mar. 23, 2013 Mar. 24, 2013 8053 D.NORDLUND 3769 S.Dupont 3769 S.Dupont 3769 S.Dupont 3731 ...

  10. SSRL BEAM PORT SCHEDULE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... BEAM LINE 6-2 May 24, 2004 May 25, 2004 May 26, 2004 May 27, 2004 May 28, 2004 May 29, 2004 May 30, 2004 2664 D.STRAWN 2730 A.BELL 2699 R.SHAFER 2699 R.SHAFER 2648 F.BRIDGES 2648 ...

  11. Pulsed ion beam source

    DOE Patents [OSTI]

    Greenly, J.B.

    1997-08-12

    An improved pulsed ion beam source is disclosed having a new biasing circuit for the fast magnetic field. This circuit provides for an initial negative bias for the field created by the fast coils in the ion beam source which pre-ionize the gas in the source, ionize the gas and deliver the gas to the proper position in the accelerating gap between the anode and cathode assemblies in the ion beam source. The initial negative bias improves the interaction between the location of the nulls in the composite magnetic field in the ion beam source and the position of the gas for pre-ionization and ionization into the plasma as well as final positioning of the plasma in the accelerating gap. Improvements to the construction of the flux excluders in the anode assembly are also accomplished by fabricating them as layered structures with a high melting point, low conductivity material on the outsides with a high conductivity material in the center. 12 figs.

  12. Beam current sensor

    DOE Patents [OSTI]

    Kuchnir, Moyses; Mills, Frederick E.

    1987-01-01

    A current sensor for measuring the DC component of a beam of charged particles employs a superconducting pick-up loop probe, with twisted superconducting leads in combination with a Superconducting Quantum Interference Device (SQUID) detector. The pick-up probe is in the form of a single-turn loop, or a cylindrical toroid, through which the beam is directed and within which a first magnetic flux is excluded by the Meisner effect. The SQUID detector acts as a flux-to-voltage converter in providing a current to the pick-up loop so as to establish a second magnetic flux within the electrode which nulls out the first magnetic flux. A feedback voltage within the SQUID detector represents the beam current of the particles which transit the pick-up loop. Meisner effect currents prevent changes in the magnetic field within the toroidal pick-up loop and produce a current signal independent of the beam's cross-section and its position within the toroid, while the combination of superconducting elements provides current measurement sensitivites in the nano-ampere range.

  13. Beam current sensor

    DOE Patents [OSTI]

    Kuchnir, M.; Mills, F.E.

    1984-09-28

    A current sensor for measuring the dc component of a beam of charged particles employs a superconducting pick-up loop probe, with twisted superconducting leads in combination with a Superconducting Quantum Interference Device (SQUID) detector. The pick-up probe is in the form of a single-turn loop, or a cylindrical toroid, through which the beam is directed and within which a first magnetic flux is excluded by the Meisner effect. The SQUID detector acts as a flux-to-voltage converter in providing a current to the pick-up loop so as to establish a second magnetic flux within the electrode which nulls out the first magnetic flux. A feedback voltage within the SQUID detector represents the beam current of the particles which transit the pick-up loop. Meisner effect currents prevent changes in the magnetic field within the toroidal pick-up loop and produce a current signal independent of the beam's cross-section and its position within the toroid, while the combination of superconducting elements provides current measurement sensitivities in the nano-ampere range.

  14. Optimizing the electron beam parameters for head-on beam-beam compensation in RHIC

    SciTech Connect (OSTI)

    Luo, Y.; Fischer, W.; Pikin, A.; Gu, X.

    2011-03-28

    Head-on beam-beam compensation is adopted to compensate the large beam-beam tune spread from the protonproton interactions at IP6 and IP8 in the Relativistic Heavy Ion Collider (RHIC). Two e-lenses are being built and to be in stalled near IP10 in the end of 2011. In this article we perform numeric simulation to investigate the effect of the electron beam parameters on the proton dynamics. The electron beam parameters include its transverse profile, size, current, offset and random errors in them. In this article we studied the effect of the electron beam parameters on the proton dynamics. The electron beam parameters include its transverse shape, size, current, offset and their random errors. From the study, we require that the electron beam size can not be smaller than the proton beam's. And the random noise in the electron current should be better than 0.1%. The offset of electron beam w.r.t. the proton beam center is crucial to head-on beam-beam compensation. Its random errors should be below {+-}8{micro}m.

  15. Experimental study of the distribution of alloying elements after the formation of epitaxial ferrite upon cooling in a low-carbon steel

    SciTech Connect (OSTI)

    Santofimia, M.J.; Kwakernaak, C.; Sloof, W.G.; Zhao, L.; Sietsma, J.

    2010-10-15

    The distributions of carbon and substitutional elements in a low-carbon steel during the formation of epitaxial ferrite on cooling after intercritical annealing have been studied by electron probe microanalysis (EPMA). The analysis has shown that the formation of epitaxial ferrite takes place with a partial redistribution of alloying elements between the epitaxial ferrite and the austenite. This redistribution of alloying elements causes compositional gradients in the epitaxial ferrite that lead to a different etching behaviour with respect to the intercritical ferrite. Contrary to Thermo-Calc predictions, a distinct partitioning behaviour of silicon has been observed.

  16. Neutral particle beam intensity controller

    DOE Patents [OSTI]

    Dagenhart, William K. (Oak Ridge, TN)

    1986-01-01

    A neutral beam intensity controller is provided for a neutral beam generator in which a neutral beam is established by accelerating ions from an ion source into a gas neutralizer. An amplitude modulated, rotating magnetic field is applied to the accelerated ion beam in the gas neutralizer to defocus the resultant neutral beam in a controlled manner to achieve intensity control of the neutral beam along the beam axis at constant beam energy. The rotating magnetic field alters the orbits of ions in the gas neutralizer before they are neutralized, thereby controlling the fraction of neutral particles transmitted out of the neutralizer along the central beam axis to a fusion device or the like. The altered path or defocused neutral particles are sprayed onto an actively cooled beam dump disposed perpendicular to the neutral beam axis and having a central open for passage of the focused beam at the central axis of the beamline. Virtually zero therough 100% intensity control is achieved by varying the magnetic field strength without altering the ion source beam intensity or its species yield.

  17. Beam position monitor sensitivity for low-[beta] beams

    SciTech Connect (OSTI)

    Shafer, R.E. )

    1994-10-10

    Design of a beam position monitor (BPM) which is sensitive to low velo charged particle beams is considered. Quantitative estimates are made for the corrections to the conventional approximations to solutions of the Laplace Equation in two-dimensions when a BPM is used to measure to position of low velocity (low-[beta]) beams. (AIP)

  18. The Beam | Open Energy Information

    Open Energy Info (EERE)

    Name: The Beam Place: Brookline, Massachusetts Zip: 2446 Product: The Beam is a start-up company that looks to establish an online retail portal that would market and sell...

  19. ANL Beams and Applications Seminar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 Seminar Sponsers AAI ASD ATLAS HEP PHY ANL Beams and Applications Seminar The ANL Beam and Applications Seminar is...

  20. Laser beam pulse formatting method

    DOE Patents [OSTI]

    Daly, Thomas P.; Moses, Edward I.; Patterson, Ralph W.; Sawicki, Richard H.

    1994-01-01

    A method for formatting a laser beam pulse (20) using one or more delay loops (10). The delay loops (10) have a partially reflective beam splitter (12) and a plurality of highly reflective mirrors (14) arranged such that the laser beam pulse (20) enters into the delay loop (10) through the beam splitter (12) and circulates therein along a delay loop length (24) defined by the mirrors (14). As the laser beam pulse (20) circulates within the delay loop (10) a portion thereof is emitted upon each completed circuit when the laser beam pulse (20) strikes the beam splitter (12). The laser beam pulse (20) is thereby formatted into a plurality of sub-pulses (50, 52, 54 and 56). The delay loops (10) are used in combination to produce complex waveforms by combining the sub-pulses (50, 52, 54 and 56) using additive waveform synthesis.

  1. Modelling of multi-ion-beam reactive cosputtering for metal oxide thin films

    SciTech Connect (OSTI)

    Xiao, D.Q.; Zhu, J.G.; Qian, Z.H.; Peng, W.B.; Wei, L.F.; Li, Z.S.

    1995-12-31

    Very recently a new technique named multi-ion-beam reactive cosputtering (MIBRECS) was developed for preparing multi-component metal oxide thin films. Epitaxial or highly oriented (Pb, La) TiO{sub 3} thin films sputtered from pure metals of lead, titanium and lathanium were deposited by using this technique. In order to consummate the technique and to study the mechanism of reactive cosputtering, a general model of multi-ion-beam reactive cosputtering was proposed for the first time based on the well-known gas kinetics under stable sputtering circumstances, and a computer numerical simulation of the model was carried out with the parameters adopted in the experiments. The relationships among the sputtering ratios of the targets, and the coverage ratios of simple substances and oxides of the target metals on substrate surface with the total reactive gas flux and the densities of the sputtering ion beam were obtained respectively, and the hysteresis effect of the characteristic of reactive sputtering and the interactions during multi-ion-beam reactive cosputtering processes were also obtained. The numerical simulation results are at least qualitatively in agreement with the experiments.

  2. Laser beam guard clamps

    DOE Patents [OSTI]

    Dickson, Richard K.

    2010-09-07

    A quick insert and release laser beam guard panel clamping apparatus having a base plate mountable on an optical table, a first jaw affixed to the base plate, and a spring-loaded second jaw slidably carried by the base plate to exert a clamping force. The first and second jaws each having a face acutely angled relative to the other face to form a V-shaped, open channel mouth, which enables wedge-action jaw separation by and subsequent clamping of a laser beam guard panel inserted through the open channel mouth. Preferably, the clamping apparatus also includes a support structure having an open slot aperture which is positioned over and parallel with the open channel mouth.

  3. CLASHING BEAM PARTICLE ACCELERATOR

    DOE Patents [OSTI]

    Burleigh, R.J.

    1961-04-11

    A charged-particle accelerator of the proton synchrotron class having means for simultaneously accelerating two separate contra-rotating particle beams within a single annular magnet structure is reported. The magnet provides two concentric circular field regions of opposite magnetic polarity with one field region being of slightly less diameter than the other. The accelerator includes a deflector means straddling the two particle orbits and acting to collide the two particle beams after each has been accelerated to a desired energy. The deflector has the further property of returning particles which do not undergo collision to the regular orbits whereby the particles recirculate with the possibility of colliding upon subsequent passages through the deflector.

  4. Stationary nonlinear Airy beams

    SciTech Connect (OSTI)

    Lotti, A.; Faccio, D.; Couairon, A.; Papazoglou, D. G.; Panagiotopoulos, P.; Tzortzakis, S.; Abdollahpour, D.

    2011-08-15

    We demonstrate the existence of an additional class of stationary accelerating Airy wave forms that exist in the presence of third-order (Kerr) nonlinearity and nonlinear losses. Numerical simulations and experiments, in agreement with the analytical model, highlight how these stationary solutions sustain the nonlinear evolution of Airy beams. The generic nature of the Airy solution allows extension of these results to other settings, and a variety of applications are suggested.

  5. Ion beam generating apparatus

    DOE Patents [OSTI]

    Brown, I.G.; Galvin, J.

    1987-12-22

    An ion generating apparatus utilizing a vacuum chamber, a cathode and an anode in the chamber. A source of electrical power produces an arc or discharge between the cathode and anode. The arc is sufficient to vaporize a portion of the cathode to form a plasma. The plasma is directed to an extractor which separates the electrons from the plasma, and accelerates the ions to produce an ion beam. 10 figs.

  6. Neutral Beam Excitation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beam Excitation of Alfv ´ en Continua in the Madison Symmetric Torus Reversed Field Pinch by Jonathan Jay Koliner A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Physics) at the University of Wisconsin - Madison 2013 Defended on 22 October 2013 Dissertation approved by the following members of the Final Oral Committee: Cary Forest * Professor of Physics John Sar↵ * Professor of Physics Jan Egedal * Professor of Physics Paul Terry *

  7. Ion beam generating apparatus

    DOE Patents [OSTI]

    Brown, Ian G.; Galvin, James

    1987-01-01

    An ion generating apparatus utilizing a vacuum chamber, a cathode and an anode in the chamber. A source of electrical power produces an arc or discharge between the cathode and anode. The arc is sufficient to vaporize a portion of the cathode to form a plasma. The plasma is directed to an extractor which separates the electrons from the plasma, and accelerates the ions to produce an ion beam.

  8. Epitaxial Ni{sub 3}FeN thin films: A candidate for spintronic devices and magnetic sensors

    SciTech Connect (OSTI)

    Loloee, Reza

    2012-07-15

    A new type of epitaxial ferromagnetic nitride (Ni{sub 3} Fe N = permalloy nitride = 'PyN') compound films were grown on Al{sub 2}O{sub 3}(1120) substrates using reactive triode magnetron sputtering. The results of electron back-scattering diffraction and x-ray diffraction techniques indicate a high quality epitaxial crystalline structure with growth normal of (100). Magnetization measurements of epitaxial PyN films revealed several unique results. (1) A textbook square hysteresis loop that suggest existence of single magnetic domain in these films. (2) A coercive field is tunable from a few mOe up to a few Oe by changing the film thickness. (3) A magnetization that switches (rotate) over a very small field range of {delta}H{sub C} {<=} 0.05 Oe, independent of the film thickness. This small {delta}H indicates a very large resistive sensitivity ({delta}R/{delta}H) of the epitaxial PyN. (4) The epitaxial PyN thermal cycling through several cycles between '2 and 800 K' (-271 Degree-Sign C to +527 Degree-Sign C) shows much less degradation only about 2-5% compared to 40% degradation of a simple Py film. Four-probe transport measurements give an anisotropic magnetoresistance of Almost-Equal-To 6%, sufficiently higher than other known ferromagnetic materials. These interesting properties are ideal for a variety of spintronic devices and magnetic sensors.

  9. RadiaBeam PPT template

    Energy Savers [EERE]

    Pedro Frigola RadiaBeam Systems, LLC Advanced Methods for Manufacturing Workshop Lockheed Martin, September 29, 2015 Development of Nuclear Quality Components using Metal Additive Manufacturing  RadiaBeam overview  AM research at RadiaBeam  Overview of EBM AM technology  Goals and relevance of the Phase I/II project  Phase I/II work 09/29/2015 2015 AMM Workshop - P. Frigola, RadiaBeam Systems, LLC 2 Outline  RadiaBeam has two core missions:  To manufacture high quality,

  10. Nanoscale molecularly imprinted polymers and method thereof

    DOE Patents [OSTI]

    Hart, Bradley R.; Talley, Chad E.

    2008-06-10

    Nanoscale molecularly imprinted polymers (MIP) having polymer features wherein the size, shape and position are predetermined can be fabricated using an xy piezo stage mounted on an inverted microscope and a laser. Using an AMF controller, a solution containing polymer precursors and a photo initiator are positioned on the xy piezo and hit with a laser beam. The thickness of the polymeric features can be varied from a few nanometers to over a micron.

  11. Long Range Ferromagnetic Order in LaCoO3-δ epitaxial films due to the interplay of epitaxial strain and oxygen vacancy ordering

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mehta, Virat; Biskup, Nevenko; Arenholz, E; Varela del Arco, Maria; Suzuki, Yuri

    2015-04-23

    We demonstrate that a combination of electronic structure modification and oxygen vacancy ordering can stabilize a long-range ferromagnetic ground state in epitaxial LaCoO3 thin films. Highest saturation magnetization values are found in the thin films in tension on SrTiO3 and (La,Sr)(Al,Ta)O3 substrates and the lowest values are found in thin films in compression on LaAlO3. Electron microscopy reveals oxygen vacancy ordering to varying degrees in all samples, although samples with the highest magnetization are the most defective. Element-specific x-ray absorption techniques reveal the presence of high spin Co2+ and Co3+ as well as low spin Co3+ in different proportions dependingmore » on the strain state. The interactions among the high spin Co ions and the oxygen vacancy superstructure are correlated with the stabilization of the long-range ferromagnetic order.« less

  12. Biaxial texturing of inorganic photovoltaic thin films using low energy ion beam irradiation during growth

    SciTech Connect (OSTI)

    Groves, James R; De Paula, Raymond F; Hayes, Garrett H; Li, Joel B; Hammond, Robert H; Salleo, Alberto; Clemens, Bruce M

    2010-05-07

    We describe our efforts to control the grain boundary alignment in polycrystalline thin films of silicon by using a biaxially textured template layer of CaF{sub 2} for photovoltaic device applications. We have chosen CaF{sub 2} as a candidate material due to its close lattice match with silicon and its suitability as an ion beam assisted deposition (mAD) material. We show that the CaF{sub 2} aligns biaxially at a thickness of {approx}10 nm and, with the addition of an epitaxial CaF{sub 2} layer, has an in-plane texture of {approx}15{sup o}. Deposition of a subsequent layer of Si aligns on the template layer with an in-plane texture of 10.8{sup o}. The additional improvement of in-plane texture is similar to the behavior observed in more fully characterized IBAD materials systems. A germanium buffer layer is used to assist in the epitaxial deposition of Si on CaF{sub 2} template layers and single crystal substrates. These experiments confirm that an mAD template can be used to biaxially orient polycrystalline Si.

  13. Structural Molecular Biology, SSRL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Highlights Training Workshops & Summer Schools Summer Students Structural Molecular Biology Illuminating Biological Structures at the Atomic and Molecular Levels Your browser...

  14. Focused-ion-beam induced damage in thin films of complex oxide BiFeO{sub 3}

    SciTech Connect (OSTI)

    Siemons, W.; Beekman, C.; Budai, J. D.; Christen, H. M.; Fowlkes, J. D.; Balke, N.; Tischler, J. Z.; Xu, R.; Liu, W.; Gonzales, C. M.

    2014-02-01

    An unexpected, strong deterioration of crystal quality is observed in epitaxial perovskite BiFeO{sub 3} films in which microscale features have been patterned by focused-ion-beam (FIB) milling. Specifically, synchrotron x-ray microdiffraction shows that the damaged region extends to tens of ?m, but does not result in measureable changes to morphology or stoichiometry. Therefore, this change would go undetected with standard laboratory equipment, but can significantly influence local material properties and must be taken into account when using a FIB to manufacture nanostructures. The damage is significantly reduced when a thin metallic layer is present on top of the film during the milling process, clearly indicating that the reduced crystallinity is caused by ion beam induced charging.

  15. Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC

    SciTech Connect (OSTI)

    Cai, Tuocheng; Jia, Zhenzhao; Yan, Baoming; Yu, Dapeng; Wu, Xiaosong

    2015-01-05

    We demonstrate hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC. Compared with the conventional thermal decomposition technique, the size of the growth domain by this method is substantially increased and the thickness variation is reduced. Based on the morphology of epitaxial graphene, the role of hydrogen is revealed. It is found that hydrogen acts as a carbon etchant. It suppresses the defect formation and nucleation of graphene. It also improves the kinetics of carbon atoms via hydrocarbon species. These effects lead to increase of the domain size and the structure quality. The consequent capping effect results in smooth surface morphology and suppression of multilayer growth. Our method provides a viable route to fine tune the growth kinetics of epitaxial graphene on SiC.

  16. Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

    SciTech Connect (OSTI)

    Godel, F.; Doudin, B.; Henry, Y.; Halley, D. E-mail: dayen@ipcms.unistra.fr; Dayen, J.-F. E-mail: dayen@ipcms.unistra.fr; Venkata Kamalakar, M.

    2014-10-13

    We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.

  17. Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene

    SciTech Connect (OSTI)

    Islam, Md. Sherajul Makino, T.; Hashimoto, A.; Bhuiyan, A. G.; Tanaka, S.

    2014-12-15

    This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO{sub 2}/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.

  18. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

    DOE Patents [OSTI]

    Han, Jung; Su, Jie

    2008-08-05

    Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

  19. Interface Coupling Transition in a Thin EpitaxialAntiferromagnetic Film Interacting with a Ferromagnetic Substrate

    SciTech Connect (OSTI)

    Finazzi, M.; Brambilla, A.; Biagioni, P.; Graf, J.; Gweon, G.-H.; Scholl, A.; Lanzara, A.; Duo, L.

    2006-09-07

    We report experimental evidence for a transition in theinterface coupling between an antiferromagnetic film and a ferromagneticsubstrate. The transition is observed in a thin epitaxial NiO film grownon top of Fe(001) as the film thickness is increased. Photoemissionelectron microscopy excited with linearly polarized x rays shows that theNiO film is antiferromagnetic at room temperature with in-plane uniaxialmagnetic anisotropy. The anisotropy axis is perpendicular to the Fesubstrate magnetization when the NiO thickness is less than about 15A,but rapidly becomes parallel to the Fe magnetization for a NiO coveragehigher than 25 A.

  20. SSRL BEAM PORT SCHEDULE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Feb. 14, 2005 Feb. 21, 2005 Feb. 28, 2005 Mar. 07, 2005 Mar. 14, 2005 Mar. 21, 2005 Mar. 28, 2005 Apr. 04, 2005 Apr. 11, 2005 Apr. 18, 2005 Apr. 25, 2005 May 02, 2005 May 09, 2005 May 16, 2005 May 23, 2005 May 30, 2005 Jun. 06, 2005 Jun. 13, 2005 Jun. 20, 2005 Jun. 27, 2005 Jul. 04, 2005 Jul. 11, 2005 Jul. 18, 2005 Jul. 25, 2005 Aug. 01, 2005 Back to Table of Contents WEEK OF Feb. 14, 2005 Feb. 14, 2005 Feb. 15, 2005 Feb. 16, 2005 Feb. 17, 2005 Feb. 18, 2005 Feb. 19, 2005 Feb. 20, 2005 BEAM LINE

  1. RECENT EXPERIENCE WITH ELECTRON LENS BEAM-BEAM COMPENSATION AT...

    Office of Scientific and Technical Information (OSTI)

    with use of bent crystals and pulsed dipole deflectors (orbit correctors). The angular beam deflection by the crystal - see Fig.2 - must be large enough to send the...

  2. Epitaxial patterning of nanometer-thick Y{sub 3}Fe{sub 5}O{sub 12} films

    Office of Scientific and Technical Information (OSTI)

    with low magnetic damping. (Journal Article) | SciTech Connect Epitaxial patterning of nanometer-thick Y{sub 3}Fe{sub 5}O{sub 12} films with low magnetic damping. Citation Details In-Document Search Title: Epitaxial patterning of nanometer-thick Y{sub 3}Fe{sub 5}O{sub 12} films with low magnetic damping. Magnetic insulators such as yttrium iron garnet, Y3Fe5O12, with extremely low magnetic damping have opened the door for low power spin-orbitronics due to their low energy dissipation and

  3. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Citation Details In-Document Search Title: Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Abstract not provided. Authors: Ihlefeld, Jon ; Brumbach, Michael T. ; Allerman, Andrew A. ; Wheeler, David Roger ; Atcitty, Stanley Publication Date: 2015-01-01 OSTI Identifier: 1244879 Report Number(s): SAND2015-0073C 558329 DOE Contract Number: AC04-94AL85000 Resource

  4. LANSCE Beam Current Limiter (XL)

    SciTech Connect (OSTI)

    Gallegos, F.R.; Hall, M.J.

    1997-01-01

    The Radiation Security System (RSS) at the Los Alamos Neutron Science Center (LANSCE) is an engineered safety system that provides personnel protection from prompt radiation due to accelerated proton beams. The Beam Current Limiter (XL), as an active component of the RSS, limits the maximum average current in a beamline, thus the current available for a beam spill accident. Exceeding the pre-set limit initiates action by the RSS to mitigate the hazard (insertion of beam stoppers in the low energy beam transport). The beam limiter is an electrically isolated, toroidal transformer and associated electronics. The device was designed to continuously monitor beamline currents independent of any external timing. Fail-safe operation was a prime consideration in its development. Fail-safe operation is defined as functioning as intended (due to redundant circuitry), functioning with a more sensitive fault threshold, or generating a fault condition. This report describes the design philosophy, hardware, implementation, operation, and limitations of the device.

  5. Magnetically operated beam dump for dumping high power beams in a neutral beamline

    DOE Patents [OSTI]

    Dagenhart, W.K.

    1984-01-27

    It is an object of this invention to provide a beam dump system for a neutral beam generator which lowers the time-averaged power density of the beam dump impingement surface. Another object of this invention is to provide a beam dump system for a neutral particle beam based on reionization and subsequent magnetic beam position modulation of the beam onto a beam dump surface to lower the time-averaged power density of the beam dump ion impingement surface.

  6. Beam experiments related to the head-on beam-beam compensation project at RHIC

    SciTech Connect (OSTI)

    Montag, C.; Bai, M.; Drees, A.; Fischer, W.; Marusic, A.; Wang, G.

    2011-03-28

    Beam experiments have been performed in RHIC to determine some key parameters of the RHIC electron lenses, and to test the capability of verifying lattice modifications by beam measurements. We report the status and recent results of these experiments. The Relativistic Heavy Ion Collider (RHIC) consists of two superconducting storage rings that intersect at six locations around its circumference. Beams collide in interaction points (IPs) 6 and 8, which are equipped with the detectors STAR and PHENIX, respectively (Fig. 1). With the polarized proton working point constrained between 2/3 and 7/10 to achieve good luminosity lifetime and maintain polarization, the proton bunch intensity is limited to 2 {center_dot} 10{sup 11} protons per bunch by the resulting beam-beam tuneshift. To overcome this limitation, installation of an electron lens in IP 10 is foreseen to partially compensate the beam-beam effect and reduce the beam-beam tuneshift parameter. As part of this project, beam experiments are being performed at RHIC to determine key parameters of the electron lens as well as to verify lattice modifications.

  7. Beam characterization by wavefront sensor

    DOE Patents [OSTI]

    Neal, D.R.; Alford, W.J.; Gruetzner, J.K.

    1999-08-10

    An apparatus and method are disclosed for characterizing an energy beam (such as a laser) with a two-dimensional wavefront sensor, such as a Shack-Hartmann lenslet array. The sensor measures wavefront slope and irradiance of the beam at a single point on the beam and calculates a space-beamwidth product. A detector array such as a charge coupled device camera is preferably employed. 21 figs.

  8. Beam characterization by wavefront sensor

    DOE Patents [OSTI]

    Neal, Daniel R.; Alford, W. J.; Gruetzner, James K.

    1999-01-01

    An apparatus and method for characterizing an energy beam (such as a laser) with a two-dimensional wavefront sensor, such as a Shack-Hartmann lenslet array. The sensor measures wavefront slope and irradiance of the beam at a single point on the beam and calculates a space-beamwidth product. A detector array such as a charge coupled device camera is preferably employed.

  9. Broad-band beam buncher

    DOE Patents [OSTI]

    Goldberg, David A. (Walnut Creek, CA); Flood, William S. (Berkeley, CA); Arthur, Allan A. (Martinez, CA); Voelker, Ferdinand (Orinda, CA)

    1986-01-01

    A broad-band beam buncher is disclosed, comprising an evacuated housing, an electron gun therein for producing an electron beam, a buncher cavity having entrance and exit openings through which the beam is directed, grids across such openings, a source providing a positive DC voltage between the cavity and the electron gun, a drift tube through which the electron beam travels in passing through such cavity, grids across the ends of such drift tube, gaps being provided between the drift tube grids and the entrance and exit grids, a modulator for supplying an ultrahigh frequency modulating signal to the drift tube for producing velocity modulation of the electrons in the beam, a drift space in the housing through which the velocity modulated electron beam travels and in which the beam is bunched, and a discharge opening from such drift tube and having a grid across such opening through which the bunched electron beam is discharged into an accelerator or the like. The buncher cavity and the drift tube may be arranged to constitute an extension of a coaxial transmission line which is employed to deliver the modulating signal from a signal source. The extended transmission line may be terminated in its characteristic impedance to afford a broad-band response and the device as a whole designed to effect broad-band beam coupling, so as to minimize variations of the output across the response band.

  10. Compact electron beam focusing column

    SciTech Connect (OSTI)

    Persaud, Arun; Leung, Ka-Ngo; Reijonen, Jani

    2001-07-13

    A novel design for an electron beam focusing column has been developed at LBNL. The design is based on a low-energy spread multicusp plasma source which is used as a cathode for electron beam production. The focusing column is 10 mm in length. The electron beam is focused by means of electrostatic fields. The column is designed for a maximum voltage of 50 kV. Simulations of the electron trajectories have been performed by using the 2-D simulation code IGUN and EGUN. The electron temperature has also been incorporated into the simulations. The electron beam simulations, column design and fabrication will be discussed in this presentation.

  11. Process for selectively patterning epitaxial film growth on a semiconductor substrate

    DOE Patents [OSTI]

    Sheldon, P.; Hayes, R.E.

    1984-12-04

    Disclosed is a process for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve the first layer a sufficient amount to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

  12. Process for selectively patterning epitaxial film growth on a semiconductor substrate

    DOE Patents [OSTI]

    Sheldon, Peter; Hayes, Russell E.

    1986-01-01

    A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

  13. Epitaxial growth of NiTiO3 with a distorted ilmenite structure

    SciTech Connect (OSTI)

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Nachimuthu, Ponnusamy; Shutthanandan, V.; Bolin, Trudy B.; Shelton, William A.; Chambers, Scott A.

    2012-06-30

    MTiO3 (M = Fe, Mn, Ni) compounds have received recent attention as possible candidates for new multiferroic materials capable of magnetization switching by application of an electric field. Epitaxial Ni1-xTi1-yO3 films of different thickness and composition were deposited on Al2O3(0001) by pulsed laser deposition, and characterized using several techniques. Structural parameters for the metastable LiNbO3-type NiTiO3 structure with the space group R3c were predicted using density functional theory calculations, and compared with the experimental results. Our structural data from x-ray diffraction and x-ray absorption spectroscopy indicate that epitaxial ilmenite-type NiTiO3 films were successfully grown. Furthermore, lattice strain exerted by the sapphire substrate results in a distorted ilmenite structure similar to the LiNbO3-type one. Our results demonstrate the potential of oxide heteroepitaxy to stabilize metastable multiferroic phases that may be difficult to prepare or are inaccessible in the bulk.

  14. Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

    SciTech Connect (OSTI)

    Bubna, M.; Bolla, G.; Bortoletto, D.; Shipsey, I.; Manfra, M.; Khan, K.; Arndt, K.; Hinton, N.; Godshalk, A.; Kumar, A.; Menasce, D.; Moroni, L.; Chramowicz, J.; Lei, C. M.; Prosser, A.; Rivera, R.; Uplegger, L.; Vetere, Maurizio Lo; Robutti, Enrico; Ferro, Fabrizio; Ravera, Fabio; Costa, Marco

    2015-08-03

    The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 1034 cm–2s–1 and collect ~ 3000fb–1 of data. The innermost layer of the pixel detector will be exposed to doses of about 1016 neq/ cm2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.

  15. Asymmetric Electron Transport at Monolayer-Bilayer Heterojunctions of Epitaxial Graphene

    SciTech Connect (OSTI)

    Li, An-Ping [ORNL] [ORNL; Clark, Kendal W [ORNL] [ORNL; Zhang, Xiaoguang [ORNL] [ORNL; Gu, Gong [University of Tennessee, Knoxville (UTK)] [University of Tennessee, Knoxville (UTK); He, Guowei [Carnegie Mellon University (CMU)] [Carnegie Mellon University (CMU); Feenstra, Randall [Carnegie Mellon University (CMU)] [Carnegie Mellon University (CMU)

    2014-01-01

    The symmetry of the graphene honeycomb lattice is a key element determining many of graphene s unique electronic properties, such as the linear energy-momentum dispersion and the suppressed backscattering 1,2. However, line defects in large-scale epitaxial graphene films, such as grain boundaries, edges, surface steps, and changes in layer thickness, often break the sublatttice symmetry and can impact transport properties of graphene profoundly 3-6. Here we report asymmetric electron transport upon polarity reversal at individual monolayer-bilayer (ML-BL) boundaries in epitaxial graphene on SiC (0001), revealed by scanning tunneling potentiometry. A greater voltage drop is observed when the current flows from BL to ML graphene than in the reverse direction, and the difference remains nearly unchanged with increasing current. This is not a typical nonlinear conductance due to electron transmission through an asymmetric potential. Rather, it indicates the opening of a dynamic energy gap at the Fermi energy due to the Coulomb interaction between the injected nonequilibrium electron density and the pseudospin polarized Friedel oscillation charge density at the boundary. This intriguing heterojunction transport behavior opens a new avenue towards novel quantum functions such as quantum switching.

  16. Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bubna, M.; Bolla, G.; Bortoletto, D.; Shipsey, I.; Manfra, M.; Khan, K.; Arndt, K.; Hinton, N.; Godshalk, A.; Kumar, A.; et al

    2015-08-03

    The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 1034 cm–2s–1 and collect ~ 3000fb–1 of data. The innermost layer of the pixel detector will be exposed to doses of about 1016 neq/ cm2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect ofmore » reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.« less

  17. Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

    SciTech Connect (OSTI)

    Horning, R.D.; Staudenmann, J.

    1987-05-25

    A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x-ray diffraction between 10 and 360 K. The CdTe growth took place at 380 /sup 0/C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the epitaxial layer using the (00l) and (hhh) Bragg reflections reveal three important features. Firstly, the GaAs substrate does not exhibit severe strain after deposition and it is as perfect as a bulk GaAs. Secondly, the CdTe unit cell distorts tetragonally with a/sub perpendicular/>a/sub parallel/ below 300 K. The decay of the (00l) reflection intensities as a function of the temperature yields a Debye temperature of 142 K, the same value as for bulk CdTe. Thirdly, a temperature-dependent isotropic static displacement of the Cd and the Te atoms is introduced to account for the anomalous behavior of the (hhh) intensities.

  18. Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers

    DOE Patents [OSTI]

    Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

    2013-09-24

    The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

  19. Method of digital epitaxy by externally controlled closed-loop feedback

    DOE Patents [OSTI]

    Eres, D.; Sharp, J.W.

    1994-07-19

    A method and apparatus for digital epitaxy are disclosed. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced. 4 figs.

  20. Structural evolution of epitaxial SrCoOx films near topotactic phase transition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jeen, Hyoung Jeen; Lee, Ho Nyung

    2015-12-18

    Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5thin films and performed post-annealing at various temperatures for topotacticmore » conversion into the perovskite phase (SrCoO3-δ). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Furthermore, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.« less

  1. Structural evolution of epitaxial SrCoOx films near topotactic phase transition

    SciTech Connect (OSTI)

    Jeen, Hyoung Jeen; Lee, Ho Nyung

    2015-12-18

    Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO3-δ). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Furthermore, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

  2. Accelerators, Beams And Physical Review Special Topics - Accelerators And Beams

    SciTech Connect (OSTI)

    Siemann, R.H.; /SLAC

    2011-10-24

    Accelerator science and technology have evolved as accelerators became larger and important to a broad range of science. Physical Review Special Topics - Accelerators and Beams was established to serve the accelerator community as a timely, widely circulated, international journal covering the full breadth of accelerators and beams. The history of the journal and the innovations associated with it are reviewed.

  3. Cherenkov Light-based Beam Profiling for Ultrarelativistic Electron Beams

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Adli, E.; Gessner, S. J.; Corde, S.; Hogan, M. J.; Bjerke, H. H.

    2015-02-09

    We describe a beam profile monitor design based on Cherenkov light emitted from a charged particle beam in an air gap. The main components of the profile monitor are silicon wafers used to reflect Cherenkov light onto a camera lens system. The design allows for measuring large beam sizes, with large photon yield per beam charge and excellent signal linearity with beam charge. Furthermore, the profile monitor signal is independent of the particle energy for ultrarelativistic particles. Different design and parameter considerations are discussed. A Cherenkov light-based profile monitor has been installed at the FACET User Facility at SLAC. Finally,more » we report on the measured performance of this profile monitor.« less

  4. SSRL BEAM PORT SCHEDULE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1-5 Nov. 28, 2005 Nov. 29, 2005 Nov. 30, 2005 Dec. 01, 2005 Dec. 02, 2005 Dec. 03, 2005 Dec. 04, 2005 MA 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ 8845 A.GONZALEZ BEAM LINE 7-1 Nov. 28, 2005 Nov. 29, 2005 Nov. 30, 2005 Dec. 01, 2005 Dec.

  5. SSRL BEAM PORT SCHEDULE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7-1 Oct. 26, 2009 Oct. 27, 2009 Oct. 28, 2009 Oct. 29, 2009 Oct. 30, 2009 Oct. 31, 2009 Nov. 01, 2009 CHANGE/8803* C.SMI 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH 8803* C.SMITH BEAM LINE 9-1 Oct. 26, 2009 Oct. 27, 2009 Oct. 28, 2009 Oct. 29, 2009 Oct. 30, 2009 Oct. 31, 2009

  6. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  7. Epitaxial crystals of Bi₂Pt₂O₇ pyrochlore through the transformation of δ–Bi₂O₃ fluorite

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gutiérrez–Llorente, Araceli; Joress, Howie; Woll, Arthur; Holtz, Megan E.; Ward, Matthew J.; Sullivan, Matthew C.; Muller, David A.; Brock, Joel D.

    2015-03-01

    Bi₂Pt₂O₇ pyrochlore is thought to be one of the most promising oxide catalysts for application in fuel cell technology. Unfortunately, direct film growth of Bi₂Pt₂O₇ has not yet been achieved, owing to the difficulty of oxidizing platinum metal in the precursor material to Pt⁴⁺. In this work, in order to induce oxidation of the platinum, we annealed pulsed laser deposited films consisting of epitaxial δ–Bi₂O₃ and co-deposited, comparatively disordered platinum. We present synchrotron x-ray diffraction results that show the nonuniform annealed films contain the first epitaxial crystals of Bi₂Pt₂O₇. We also visualized the pyrochlore structure by scanning transmission electron microscopy,more » and observed ordered cation vacancies in the epitaxial crystals formed in a bismuth-rich film but not in those formed in a platinum-rich film. The similarity between the δ–Bi₂O₃ and Bi₂Pt₂O₇ structures appears to facilitate the pyrochlore formation. These results provide the only route to date for the formation of epitaxial Bi₂Pt₂O₇.« less

  8. High efficiency epitaxial optical reflector solar cells. Final subcontract report, 1 January 1990--31 October 1992

    SciTech Connect (OSTI)

    Dapkus, P.D.; Hummel, S.G.

    1993-08-01

    This report describes work to test the feasibility of a new solar cell concept -- the epitaxial optical reflector (EOR) solar cell. This cell concept alters current designs for high efficiency cells by changing the optical absorption efficiency of single cells. The change is introduced by the use an epitaxial multilayer reflector as an integral part of the cell to increase the optical path length of certain wavelengths of light in the cell. These changes are expected to increase the open circuit voltage at which power is extracted from the cell. The program is designed to test the feasibility of the use of a broad band epitaxial multilayer reflector grown as an integral part of the device structure to reflect the near-band-edge light back through the device for a second absorption pass. This second pass allows the design of a solar cell with a thinner base, and the use of the epitaxial reflector as a heterojunction carrier-reflecting barrier at the rear of the device. The thinner cell design and altered carrier profile that results from the light- and carrier-reflecting barrier will decrease the carrier concentration gradient and increase the open circuit voltage. The program is structured to have three tasks: (1) Solar Cell and Reflector Modeling, (2) Materials Growth and Optimization, and (3) Solar Cell Fabrication and Characterization.

  9. Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO{sub 3} interface (invited)

    SciTech Connect (OSTI)

    Radaelli, G. Petti, D.; Cantoni, M.; Rinaldi, C.; Bertacco, R.

    2014-05-07

    Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO{sub 3} (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures.

  10. Broad-band beam buncher

    DOE Patents [OSTI]

    Goldberg, D.A.; Flood, W.S.; Arthur, A.A.; Voelker, F.

    1984-03-20

    A broad-band beam bunther is disclosed, comprising an evacuated housing, an electron gun therein for producing an electron beam, a buncher cavity having entrance and exit openings through which the beam is directed, grids across such openings, a source providing a positive DC voltage between the cavity and the electron gun, a drift tube through which the electron beam travels in passing through such cavity, grids across the ends of such drift tube, gaps being provided between the drift tube grids and the entrance and exit grids, a modulator for supplying an ultrahigh frequency modulating signal to the drift tube for producing velocity modulation of the electrons in the beam, a drift space in the housing through which the velocity modulated electron beam travels and in which the beam is bunched, and a discharge opening from such drift tube and having a grid across such opening through which the bunched electron beam is discharged into an accelerator or the like. The buncher cavity and the drift tube may be arranged to constitute an extension of a coaxial transmission line which is employed to deliver the modulating signal from a signal source. The extended transmission line may be terminated in its characteristic impedance to afford a broad-

  11. Dark matter beams at LBNF

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Coloma, Pilar; Dobrescu, Bogdan A.; Frugiuele, Claudia; Harnik, Roni

    2016-04-08

    High-intensity neutrino beam facilities may produce a beam of light dark matter when protons strike the target. Searches for such a dark matter beam using its scattering in a nearby detector must overcome the large neutrino background. We characterize the spatial and energy distributions of the dark matter and neutrino beams, focusing on their differences to enhance the sensitivity to dark matter. We find that a dark matter beam produced by a Zmore » $$^{'}$$ boson in the GeV mass range is both broader and more energetic than the neutrino beam. The reach for dark matter is maximized for a detector sensitive to hard neutral-current scatterings, placed at a sizable angle off the neutrino beam axis. In the case of the Long-Baseline Neutrino Facility (LBNF), a detector placed at roughly 6 degrees off axis and at a distance of about 200 m from the target would be sensitive to Z$$^{'}$$ couplings as low as 0.05. This search can proceed symbiotically with neutrino measurements. We also show that the MiniBooNE and MicroBooNE detectors, which are on Fermilab’s Booster beamline, happen to be at an optimal angle from the NuMI beam and could perform searches with existing data. As a result, this illustrates potential synergies between LBNF and the short-baseline neutrino program if the detectors are positioned appropriately.« less

  12. The Gas Flow from the Gas Attenuator to the Beam Line

    SciTech Connect (OSTI)

    Ryutov, D.D.

    2010-12-03

    The gas leak from the gas attenuator to the main beam line of the Linac Coherent Light Source has been evaluated, with the effect of the Knudsen molecular beam included. It has been found that the gas leak from the gas attenuator of the present design, with nitrogen as a working gas, does not exceed 10{sup -5} torr x l/s even at the highest pressure in the main attenuation cell (20 torr).

  13. Measurements of aperture and beam lifetime using movable beam scrapers in Indus-2 electron storage ring

    SciTech Connect (OSTI)

    Kumar, Pradeep; Ghodke, A. D.; Karnewar, A. K.; Holikatti, A. C.; Yadav, S.; Puntambekar, T. A.; Singh, G.; Singh, P.

    2013-12-15

    In this paper, the measurements of vertical and horizontal aperture which are available for stable beam motion in Indus-2 at beam energy 2.5 GeV using movable beam scrapers are presented. These beam scrapers are installed in one of the long straight sections in the ring. With the movement of beam scrapers towards the beam centre, the beam lifetime is measured. The beam lifetime data obtained from the movement of vertical and horizontal beam scrapers are analyzed. The contribution of beam loss due to beam-gas scattering (vacuum lifetime) and electron-electron scattering within a beam bunch (Touschek lifetime) is separated from the measured beam lifetime at different positions of the beam scrapers. Vertical and horizontal beam sizes at scrapers location are estimated from the scraper movement towards the beam centre in quantum lifetime limit and their values closely agree with measured value obtained using X-ray diagnostic beamline.

  14. Depolarization due to beam-beam interaction in electron-positron linear

    Office of Scientific and Technical Information (OSTI)

    colliders (Conference) | SciTech Connect Conference: Depolarization due to beam-beam interaction in electron-positron linear colliders Citation Details In-Document Search Title: Depolarization due to beam-beam interaction in electron-positron linear colliders We investigate two major mechanisms which induce depolarization of electron beams during beam-beam interaction in linear colliders. These are the classical spin precession under the collective field of the oncoming beam, and the

  15. BEAM-BEAM SIMULATIONS FOR THE ERHIC ELECTRON RING.

    SciTech Connect (OSTI)

    MONTAG, C.

    2005-05-16

    To study collisions between polarized electrons and heavy ions or polarized protons at high energy, adding a 10 GeV electron storage ring to the existing RHIC facility is currently under consideration. To achieve high luminosities of several 10{sup 33} cm{sup -2} sec{sup -1} range, a vertical beam-beam tuneshift parameter of {zeta}{sub y} = 0.08 is required for the electron beam. Simulation studies are being performed to study the feasibility of this high tuneshift parameter and explore the potential for even higher tuneshifts. Recent results of these studies are presented.

  16. Laser beam alignment apparatus and method

    DOE Patents [OSTI]

    Gruhn, Charles R.; Hammond, Robert B.

    1981-01-01

    The disclosure relates to an apparatus and method for laser beam alignment. Thermoelectric properties of a disc in a laser beam path are used to provide an indication of beam alignment and/or automatic laser alignment.

  17. Laser beam alignment apparatus and method

    DOE Patents [OSTI]

    Gruhn, C.R.; Hammond, R.B.

    The disclosure related to an apparatus and method for laser beam alignment. Thermoelectric properties of a disc in a laser beam path are used to provide an indication of beam alignment and/or automatic laser alignment.

  18. Time Structure of the LANSCE Beam

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Structure of the LANSCE Beam One of the greatest strengths of the LANSCE facility is that it can produce proton beams with a wide range of time structures. Time Structure of the LANSCE Beam One of the greatest strengths of the LANSCE facility is that it can produce proton beams with a wide range of time structures. The time structure of the LANSCE proton beam can be optimized for particular experiments within the constraints of the accelerator operating parameters. The linac accelerates beam

  19. Coherent instabilities of a relativistic bunched beam

    SciTech Connect (OSTI)

    Chao, A.W.

    1982-06-01

    A charge-particle beam contained in an accelerator vacuum chamber interacts electromagnetically with its environment to create a wake field. This field than acts back on the beam, perturbing the particle motion. If the beam intensity is high enough, this beam-environment interaction may lead to an instability and to subsequent beam loss. The beam and its environment form a dynamical system, and it is this system that will be studied. 84 references.

  20. Electrostatic wire stabilizing a charged particle beam

    DOE Patents [OSTI]

    Prono, D.S.; Caporaso, G.J.; Briggs, R.J.

    1983-03-21

    In combination with a charged particle beam generator and accelerator, apparatus and method are provided for stabilizing a beam of electrically charged particles. A guiding means, disposed within the particle beam, has an electric charge induced upon it by the charged particle beam. Because the sign of the electric charge on the guiding means and the sign of the particle beam are opposite, the particles are attracted toward and cluster around the guiding means to thereby stabilize the particle beam as it travels.