Sample records for modules single-crystal silicon

  1. Arnold Schwarzenegger SINGLE CRYSTAL SILICON

    E-Print Network [OSTI]

    in this report. #12;ENERGY INNOVATIONS SMALL GRANT (EISG) PROGRAM INDEPENDENT ASSESSMENT REPORT (IAR) SINGLEArnold Schwarzenegger Governor SINGLE CRYSTAL SILICON SHEET GROWTH Prepared For: California Energy Commission Energy Innovations Small Grant Program Prepared By: Energy Materials Research

  2. Solar cell structure incorporating a novel single crystal silicon material

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1983-01-01T23:59:59.000Z

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  3. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect (OSTI)

    Kumar, A.; Ravi, K. V.

    2011-06-01T23:59:59.000Z

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  4. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    SciTech Connect (OSTI)

    Ravi, T. S.

    2013-05-01T23:59:59.000Z

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  5. A Constitutive Model for the Mechanical Behavior of Single Crystal Silicon at Elevated Temperature

    E-Print Network [OSTI]

    Moon, H.-S.

    Silicon in single crystal form has been the material of choice for the first demonstration of the MIT microengine project. However, because it has a relatively low melting temperature, silicon is not an ideal material for ...

  6. Single crystal silicon as a macro-world structural material : application to compact, lightweight high pressure vessels

    E-Print Network [OSTI]

    Garza, Tanya Cruz

    2011-01-01T23:59:59.000Z

    Single crystal silicon has promising inherent structural properties which are attractive for weight sensitive applications. Single crystal silicon, however, is a brittle material which makes the usable strength that can ...

  7. Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films

    E-Print Network [OSTI]

    Danielson, David T. (David Thomas)

    2008-01-01T23:59:59.000Z

    The single crystal silicon-on-insulator thin film materials system represents both an ideal model system for the study of anisotropic thin film dewetting as well as a technologically important system for the development ...

  8. A variable capacitor made from single crystal silicon fracture surface pairs

    E-Print Network [OSTI]

    Sprunt, Alexander D. (Alexander Dalziel), 1977-

    2005-01-01T23:59:59.000Z

    Complementary and nano-smooth single-crystal-silicon surfaces have been fabricated by deliberately fracturing a weakened portion of a larger structure whose flexural mechanism refines and concentrates an externally applied ...

  9. Experimental Analysis of the Elastic Plastic Transition During Nanoindentation of Single Crystal a-Silicon Nitride

    SciTech Connect (OSTI)

    Jang, Jae-il [Hanyang University, Korea; Bei, Hongbin [ORNL; Becher, Paul F [ORNL; Pharr, George M [University of Tennessee, Knoxville (UTK) & Oak Ridge National Laboratory (ORNL)

    2012-01-01T23:59:59.000Z

    The elastic-to-plastic transition in single crystal a-silicon nitride was experimentally characterized through a series of nanoindentation experiments using a spherical indenter. The experimental results provide a quantitative description of the critical shear strengths for the transition, as well as estimates of the shear modulus and nanohardness of the material.

  10. Bendable single crystal silicon thin film transistors formed by printing on plastic substrates

    E-Print Network [OSTI]

    Rogers, John A.

    Bendable single crystal silicon thin film transistors formed by printing on plastic substrates E on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet

  11. Optical constants of silicon carbide for astrophysical applications. II. Extending optical functions from IR to UV using single-crystal absorption spectra

    E-Print Network [OSTI]

    Hofmeister, A M; Goncharov, A F; Speck, A K

    2009-01-01T23:59:59.000Z

    Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal stuctures of silicon carbide (SiC) are presented from 1200--35,000 cm$^{-1}$ ($\\lambda \\sim$ 8--0.28 $\\mu$m) and used to improve the accuracy of optical functions ($n$ and $k$) from the infrared (IR) to the ultraviolet (UV). Comparison with previous $\\lambda \\sim$ 6--20 $\\mu$m thin-film spectra constrains the thickness of the films and verifies that recent IR reflectivity data provide correct values for $k$ in the IR region. We extract $n$ and $k$ needed for radiative transfer models using a new ``difference method'', which utilizes transmission spectra measured from two SiC single-crystals with different thicknesses. This method is ideal for near-IR to visible regions where absorbance and reflectance are low and can be applied to any material. Comparing our results with previous UV measurements of SiC, we distinguish between chemical and structural effects at high frequency. We find that for all spectral re...

  12. OPTICAL CONSTANTS OF SILICON CARBIDE FOR ASTROPHYSICAL APPLICATIONS. II. EXTENDING OPTICAL FUNCTIONS FROM INFRARED TO ULTRAVIOLET USING SINGLE-CRYSTAL ABSORPTION SPECTRA

    SciTech Connect (OSTI)

    Hofmeister, A. M.; Pitman, K. M. [Department of Earth and Planetary Sciences, Washington University, St. Louis, MO 63130 (United States); Goncharov, A. F. [Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015 (United States); Speck, A. K. [Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, MO 65211 (United States)], E-mail: hofmeist@levee.wustl.edu

    2009-05-10T23:59:59.000Z

    Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal structures of silicon carbide (SiC) are presented from 1200-35000 cm{sup -1} ({lambda} {approx} 8-0.28 {mu}m) and used to improve the accuracy of optical functions (n and k) from the infrared (IR) to the ultraviolet (UV). Comparison with previous {lambda} {approx} 6-20 {mu}m thin-film spectra constrains the thickness of the films and verifies that recent IR reflectivity data provide correct values for k in the IR region. We extract n and k needed for radiative transfer models using a new 'difference method', which utilizes transmission spectra measured from two SiC single-crystals with different thicknesses. This method is ideal for near-IR to visible regions where absorbance and reflectance are low and can be applied to any material. Comparing our results with previous UV measurements of SiC, we distinguish between chemical and structural effects at high frequency. We find that for all spectral regions, 3C ({beta}-SiC) and the E-vector perpendicular c-vector polarization of 6H (a type of {alpha}-SiC) have almost identical optical functions that can be substituted for each other in modeling astronomical environments. Optical functions for E-vector || c-vector of 6H SiC have peaks shifted to lower frequency, permitting identification of this structure below {lambda} {approx} 4 {mu}m. The onset of strong UV absorption for pure SiC occurs near 0.2 {mu}m, but the presence of impurities redshifts the rise to 0.33 {mu}m. Optical functions are similarly impacted. Such large differences in spectral characteristics due to structural and chemical effects should be observable and provide a means to distinguish chemical variation of SiC dust in space.

  13. SINGLE CRYSTAL NEUTRON DIFFRACTION.

    SciTech Connect (OSTI)

    KOETZLE,T.F.

    2001-03-13T23:59:59.000Z

    Single-crystal neutron diffraction measures the elastic Bragg reflection intensities from crystals of a material, the structure of which is the subject of investigation. A single crystal is placed in a beam of neutrons produced at a nuclear reactor or at a proton accelerator-based spallation source. Single-crystal diffraction measurements are commonly made at thermal neutron beam energies, which correspond to neutron wavelengths in the neighborhood of 1 Angstrom. For high-resolution studies requiring shorter wavelengths (ca. 0.3-0.8 Angstroms), a pulsed spallation source or a high-temperature moderator (a ''hot source'') at a reactor may be used. When complex structures with large unit-cell repeats are under investigation, as is the case in structural biology, a cryogenic-temperature moderator (a ''cold source'') may be employed to obtain longer neutron wavelengths (ca. 4-10 Angstroms). A single-crystal neutron diffraction analysis will determine the crystal structure of the material, typically including its unit cell and space group, the positions of the atomic nuclei and their mean-square displacements, and relevant site occupancies. Because the neutron possesses a magnetic moment, the magnetic structure of the material can be determined as well, from the magnetic contribution to the Bragg intensities. This latter aspect falls beyond the scope of the present unit; for information on magnetic scattering of neutrons see Unit 14.3. Instruments for single-crystal diffraction (single-crystal diffractometers or SCDs) are generally available at the major neutron scattering center facilities. Beam time on many of these instruments is available through a proposal mechanism. A listing of neutron SCD instruments and their corresponding facility contacts is included in an appendix accompanying this unit.

  14. Single crystal neutron diffraction study of lattice and magnetic structures of 5M modulated Ni2Mn1.14Ga0.86

    SciTech Connect (OSTI)

    Pramanick, Abhijit [ORNL] [ORNL; Wang, Xiaoping [ORNL] [ORNL; An, Ke [ORNL] [ORNL; Stoica, Alexandru Dan [ORNL] [ORNL; Hoffmann, Christina [ORNL] [ORNL; Wang, Xun-Li [ORNL] [ORNL

    2012-01-01T23:59:59.000Z

    A comprehensive description of the crystal and magnetic structures of Ni-Mn-Ga magnetic shape memory alloys is important to understand the physical origins of their magnetoelastic properties. These structural details for an off-stoichiometric Ni2Mn1.14Ga0.86 alloy have been obtained from refinement of high-resolution single crystal neutron diffraction data following a (3+1)-dimensional superspace formalism. In particular, the structure adopts a P2/m( 0 )00 (3+1)-D superspace symmetry with the following fundamental lattice parameters: a=4.255(4) , b=5.613(4) , c=4.216(3) , a commensurate periodicity of 5M and a modulation wave vector of . The magnetic moments are aligned along the b-axis. The modulations for atomic site displacements, site occupancies and magnetic moments are elucidated from a (3+1)-D refinement of the neutron diffraction data. In addition to atomic displacements corresponding to shear waves along <110>, distortions of Ni-centric tetrahedra are also evident. Physical interpretations for the different structural distortions and their relationship with magnetic properties are discussed.

  15. X-ray diffraction on the X-cut of a Ca{sub 3}TaGa{sub 3}Si{sub 2}O{sub 14} single crystal modulated by a surface acoustic wave

    SciTech Connect (OSTI)

    Irzhak, D., E-mail: irzhak@iptm.ru; Roshchupkin, D., E-mail: rochtch@iptm.ru [Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka 142432 (Russian Federation)

    2014-06-28T23:59:59.000Z

    The result of X-ray diffraction study on a single crystal of the calcium-gallogermanate family Ca{sub 3}TaGa{sub 3}Si{sub 2}O{sub 14} (CTGS) modulated by a surface acoustic wave (SAW) is presented. The power flow angle for SAW propagating along the X{sub 2} axis of the X-cut in CTGS was measured. The rocking curves for the CTGS crystal were recorded at different amplitudes of an input high frequency electric signal on interdigital transducer used to excite a SAW. Based on the data obtained, intensity dependence of diffraction satellites on the amplitude of electric signal exciting a SAW was built. Numerical simulation of the crystal rocking curves and dependence of diffraction satellite intensities on the SAW amplitude enabled the selection of a set of material constants at which the most complete coincidence of experimental and calculated results is observed.

  16. Fabrication of Ordered Array of Tips-pentacene Micro- and Nano-scale Single Crystals 

    E-Print Network [OSTI]

    Xia, Ning

    2013-04-26T23:59:59.000Z

    by nanofabrication techniques such as nanoimprint and photolithography. In the first method, the surface of a silicon substrate is treated by surfactant coating and Tips-pentacene single crystals are deposited in squared patterns. In the second method, we made...

  17. Cryogenic Silicon Microstrip Detector Modules for LHC

    E-Print Network [OSTI]

    Perea-Solano, B

    2004-01-01T23:59:59.000Z

    CERN is presently constructing the LHC, which will produce collisions of 7 TeV protons in 4 interaction points at a design luminosity of 1034 cm-2 s-1. The radiation dose resulting from the operation at high luminosity will cause a serious deterioration of the silicon tracker performance. The state-of-art silicon microstrip detectors can tolerate a fluence of about 3 1014 cm-2 of hadrons or charged leptons. This is insufficient, however, for long-term operation in the central parts of the LHC trackers, in particular after the possible luminosity upgrade of the LHC. By operating the detectors at cryogenic temperatures the radiation hardness can be improved by a factor 10. This work proposes a cryogenic microstrip detector module concept which has the features required for the microstrip trackers of the upgraded LHC experiments at CERN. The module can hold an edgeless sensor, being a good candidate for improved luminosity and total cross-section measurements in the ATLAS, CMS and TOTEM experiments. The design o...

  18. IMPROVED SPECTRAL RESPONSE OF SILICONE ENCAPSULANTED PHOTOVOLTAIC MODULES

    E-Print Network [OSTI]

    IMPROVED SPECTRAL RESPONSE OF SILICONE ENCAPSULANTED PHOTOVOLTAIC MODULES Nick E. Powell 1* , Byung the benefit of using optically superior silicone encapsulant materials over the incumbent ethylene vinyl in the UV region of the solar spectrum. Single cell mini-modules were prepared using two different

  19. Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells

    E-Print Network [OSTI]

    Schiff, Eric A.

    Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells Kai Zhu a,1 , E Solar, Toano, VA 23168, USA Abstract We report infrared depletion modulation spectra for near an infrared modulation spectroscopy technique that probes the optical spectra of dopants and defects

  20. Thermo-optically tunable silicon photonic crystal light modulator

    E-Print Network [OSTI]

    Lee, Jeong-Bong

    Thermo-optically tunable silicon photonic crystal light modulator Yonghao Cui,* Ke Liu, Duncan L (Doc. ID 130726); published October 21, 2010 We designed, fabricated, and characterized a thermo frequency in a silicon-based line defect PhC. The cutoff frequency is shifted because of the thermo

  1. Ames Lab 101: Single Crystal Growth

    ScienceCinema (OSTI)

    Schlagel, Deborah

    2014-06-04T23:59:59.000Z

    Ames Laboratory scientist Deborah Schlagel talks about the Lab's research in growing single crystals of various metals and alloys. The single crystal samples are vital to researchers' understanding of the characteristics of a materials and what gives these materials their particular properties.

  2. Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demsy and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demésy and Sajeev://jap.aip.org/about/rights_and_permissions #12;Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demesya

  3. Solar power conversion efficiency in modulated silicon nanowire photonic Alexei Deinega and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinega://jap.aip.org/about/rights_and_permissions #12;Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinegaa that using only 1 lm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power

  4. Test-to-Failure of Crystalline Silicon Modules: Preprint

    SciTech Connect (OSTI)

    Hacke, P.; Terwilliger, K.; Glick, S.; Trudell, D.; Bosco, N.; Johnston, S.; Kurtz, S. R.

    2010-10-01T23:59:59.000Z

    Accelerated lifetime testing of five crystalline silicon module designs was carried out according to the Terrestrial Photovoltaic Module Accelerated Test-to-Failure Protocol. This protocol compares the reliability of various module constructions on a quantitative basis. The modules under test are subdivided into three accelerated lifetime testing paths: 85..deg..C/85% relative humidity with system bias, thermal cycling between ?40..deg..C and 85..deg..C, and a path that alternates between damp heat and thermal cycling. The most severe stressor is damp heat with system bias applied to simulate the voltages that modules experience when connected in an array. Positive 600 V applied to the active layer with respect to the grounded module frame accelerates corrosion of the silver grid fingers and degrades the silicon nitride antireflective coating on the cells. Dark I-V curve fitting indicates increased series resistance and saturation current around the maximum power point; however, an improvement in junction recombination characteristics is obtained. Shunt paths and cell-metallization interface failures are seen developing in the silicon cells as determined by electroluminescence, thermal imaging, and I-V curves in the case of negative 600 V bias applied to the active layer. Ability to withstand electrolytic corrosion, moisture ingress, and ion drift under system voltage bias are differentiated.

  5. Development of single crystal filaments. Final report

    SciTech Connect (OSTI)

    Milewski, J.V.; Shoultz, R.A.; Bourque-McConnell, M.M.

    1995-04-01T23:59:59.000Z

    The program just completed addresses a route to a more efficient longer-lasting electric light bulb filament. All current filaments for light bulbs are metallic in nature. They are subject to embrittlement with age (large grain growth) and relatively high vapor pressures which limits their operating temperature. There is evidence which suggests advantages to using high temperature refractory single crystal fibers as a filament for a light bulb. These refractory materials may include materials such as hafnium or tantalum carbide which have melting points about 500{degrees}C higher than tungsten. Another advantage is that single crystal fibers have a very high degree of crystalline perfection with very few voids and dislocations. Without these imperfections, the atomic mobility at high temperatures is highly restricted. Thus single crystal fibers are very stable at high temperature and will last longer. The efficiencies result from running these single crystal ceramic fiber filaments at higher temperatures and the higher emissivity of the carbide filaments compared to tungsten. The amount of visible light is proportional to the 4the power of the temperature thus a 500{degrees}C higher operating give about a 3-fold increase in radiation in the visible range. The program accomplishments can be summarized as follows: (1) Single crystal fibers of JfC sufficient crystal quality for light bulb filament applications were made. (2) The HfC fiber furnace growth chamber, power control and data collection system was developed for the laboratory scale plant. (3) method for mounting and apparatuses for testing the single crystal fiber filaments were developed and built.

  6. Monolithic amorphous silicon modules on continuous polymer substrate

    SciTech Connect (OSTI)

    Grimmer, D.P. (Iowa Thin Film Technologies, Inc., Ames, IA (United States))

    1992-03-01T23:59:59.000Z

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  7. Neutron detection with single crystal organic scintillators

    SciTech Connect (OSTI)

    Zaitseva, N; Newby, J; Hamel, S; Carman, L; Faust, M; Lordi, V; Cherepy, N; Stoeffl, W; Payne, S

    2009-07-15T23:59:59.000Z

    Detection of high-energy neutrons in the presence of gamma radiation background utilizes pulse-shape discrimination (PSD) phenomena in organics studied previously only with limited number of materials, mostly liquid scintillators and single crystal stilbene. The current paper presents the results obtained with broader varieties of luminescent organic single crystals. The studies involve experimental tools of crystal growth and material characterization in combination with the advanced computer modeling, with the final goal of better understanding the relevance between the nature of the organic materials and their PSD properties. Special consideration is given to the factors that may diminish or even completely obscure the PSD properties in scintillating crystals. Among such factors are molecular and crystallographic structures that determine exchange coupling and exciton mobility in organic materials and the impurity effect discussed on the examples of trans-stilbene, bibenzyl, 9,10-diphenylanthracene and diphenylacetylene.

  8. HYDROGEN CHEMISORPTION ON Pt SINGLE CRYSTAL SURFACES IN ACIDIC SOLUTIONS

    E-Print Network [OSTI]

    Ross, Jr., Philip N.

    2012-01-01T23:59:59.000Z

    t for the Adsorption of Hydrogen on Pt Single CrystalSubmitted to Surface Science HYDROGEN CHEMISORPTION ON Ptheats of adsorption of hydrogen on (111) and (100) sur-

  9. Variation in Machinability of Single Crystal Materials in Micromachining

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    impact on the critical DOC at which such materials can becritical depth of cut and crystallographic orientation was found on single crystal materials (

  10. amorphous silicon modules: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  11. Halide electroadsorption on single crystal surfaces

    SciTech Connect (OSTI)

    Ocko, B.M. [Brookhaven National Lab., Upton, NY (United States). Dept. of Physics; Wandlowski, T. [Univ. of Ulm (Germany). Dept. of Electrochemistry

    1997-07-01T23:59:59.000Z

    The structure and phase behavior of halides have been investigated on single crystals of Ag and Au using synchrotron x-ray scattering techniques. The adlayer coverages are potential dependent. For all halides studied the authors found that with increasing potential, at a critical potential, a disordered adlayer transforms into an ordered structure. Often these ordered phases are incommensurate and exhibit potential-dependent lateral separations (electrocompression). The authors have analyzed the electrocompression in terms of a model which includes lateral interactions and partial charge. A continuous compression is not observed for Br on Ag(100). Rather, they find that the adsorption is site-specific (lattice gas) in both the ordered and disordered phases. The coverage increases with increasing potential and at a critical potential the disordered phase transforms to a well-ordered commensurate structure.

  12. Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon

    E-Print Network [OSTI]

    Schiff, Eric A.

    Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon KAI ZHU Solar, Toano, VA 23168 USA ABSTRACT We present infrared charge-modulation absorption spectra have been developing an infrared modulation spectroscopy technique that probes the optical spectra

  13. High-speed silicon electro-optic modulator for electronic photonic integrated circuits

    E-Print Network [OSTI]

    Gan, Fuwan

    2007-01-01T23:59:59.000Z

    The development of future electronic-photonic integrated circuits (EPIC) based on silicon technology critically depends on the availability of CMOS-compatible high-speed modulators that enable the interaction of electronic ...

  14. CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide Stevan S. Djordjevic,1-optic contribution with that from the amorphous titanium dioxide (a-TiO2) overcladding with a negative thermo-compatible Titanium Dioxide Deposition for Athermalization of Silicon Waveguides," accepted for publication

  15. Single-crystal germanium growth on amorphous silicon

    E-Print Network [OSTI]

    McComber, Kevin A

    2011-01-01T23:59:59.000Z

    The integration of photonics with electronics has emerged as a leading platform for microprocessor technology and the continuation of Moore's Law. As electronic device dimensions shrink, electronic signals encounter crippling ...

  16. The effect of encapsulation on the reflectance of photovoltaic modules using textured multicrystalline-silicon solar cells

    SciTech Connect (OSTI)

    Gee, J.M.; Schubert, W.K.; Tardy, H.L.; Hund, T.D. [Sandia National Labs., Albuquerque, NM (United States); Robison, G. [Semiconductor Assembly Network, Prescott Valley, AZ (United States)

    1995-01-01T23:59:59.000Z

    Texturing multicrystalline-silicon cells is a promising technique for reducing reflectance losses. We investigated two methods for texturing multicrystalline-silicon solar cells - anisotropic chemical etch and mechanical dicing saw. Our work emphasized reducing reflectance in the encapsulated module by using optical confinement in the module. We found that optical confinement in the module is very important in the optimization of texture geometries.

  17. Epitaxial electrodeposition of freestanding large area single crystal substrates

    SciTech Connect (OSTI)

    Shin, Jae Wook; Standley, Adam; Chason, Eric [Brown University, Box D, Providence, Rhode Island 02912 (United States)

    2007-06-25T23:59:59.000Z

    The authors report on a method for producing freestanding single crystal metal films over large areas using electrodeposition and selective etching. The method can be turned into an inexpensive continuous process for making long ribbons or a large area of single crystal films. Results from a 5x5 mm{sup 2} Ni single crystal film using electron backscattering pattern pole figures and x-ray diffraction demonstrate that the quality of material produced is equivalent to the initial substrate without annealing or polishing.

  18. Superconducting Proximity Effect in Single-Crystal Nanowires 

    E-Print Network [OSTI]

    Liu, Haidong

    2010-07-14T23:59:59.000Z

    This dissertation describes experimental studies of the superconducting proximity effect in single-crystal Pb, Sn, and Zn nanowires of lengths up to 60 um, with both ends of the nanowires in contact with macroscopic electrodes that are either...

  19. Synthesis and physical characterization of thermoelectric single crystals

    E-Print Network [OSTI]

    Porras Pérez Guerrero, Juan Pablo

    2012-01-01T23:59:59.000Z

    There is much current interest in thermoelectric devices for sustainable energy. This thesis describes a research project on the synthesis and physical characterization of thermoelectric single crystals. 1In?Se?-[delta] ...

  20. Transverse acoustic actuation of Ni-Mn-Ga single crystals

    E-Print Network [OSTI]

    Simon, Jesse Matthew

    2007-01-01T23:59:59.000Z

    Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

  1. Constitutive modeling of creep of single crystal superalloys

    E-Print Network [OSTI]

    Prasad, Sharat Chand

    2006-10-30T23:59:59.000Z

    In this work, a constitutive theory is developed, within the context of continuum mechanics, to describe the creep deformation of single crystal superalloys. The con- stitutive model that is developed here is based on the fact that as bodies deform...

  2. Jefferson Lab Builds First Single Crystal Single Cell Accelerating...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Single Cell Cavity This single cell cavity was made from a single crystal of niobium. Made in the same shape as the low-loss design proposed as an improvement to the baseline for...

  3. Superconducting Proximity Effect in Single-Crystal Nanowires

    E-Print Network [OSTI]

    Liu, Haidong

    2010-07-14T23:59:59.000Z

    This dissertation describes experimental studies of the superconducting proximity effect in single-crystal Pb, Sn, and Zn nanowires of lengths up to 60 um, with both ends of the nanowires in contact with macroscopic electrodes that are either...

  4. al single crystal: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 Low-Leakage Superconducting Tunnel Junctions with a Single-Crystal Al2O3 Barrier* Computer Technologies and...

  5. al single crystals: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 Low-Leakage Superconducting Tunnel Junctions with a Single-Crystal Al2O3 Barrier* Computer Technologies and...

  6. Single crystal Processing and magnetic properties of gadolinium nickel

    SciTech Connect (OSTI)

    Shreve, Andrew John [Ames Laboratory

    2012-11-02T23:59:59.000Z

    GdNi is a rare earth intermetallic material that exhibits very interesting magnetic properties. Spontaneous magnetostriction occurs in GdNi at T{sub C}, on the order of 8000ppm strain along the c-axis and only until very recently the mechanism causing this giant magnetostriction was not understood. In order to learn more about the electronic and magnetic structure of GdNi, single crystals are required for anisotropic magnetic property measurements. Single crystal processing is quite challenging for GdNi though since the rare-earth transition-metal composition yields a very reactive intermetallic compound. Many crystal growth methods are pursued in this study including crucible free methods, precipitation growths, and specially developed Bridgman crucibles. A plasma-sprayed Gd{sub 2}O{sub 3} W-backed Bridgman crucible was found to be the best means of GdNi single crystal processing. With a source of high-quality single crystals, many magnetization measurements were collected to reveal the magnetic structure of GdNi. Heat capacity and the magnetocaloric effect are also measured on a single crystal sample. The result is a thorough report on high quality single crystal processing and the magnetic properties of GdNi.

  7. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

    2001-01-01T23:59:59.000Z

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  8. Growing intermetallic single crystals using in situ decanting

    SciTech Connect (OSTI)

    Petrovic, Cedomir; Canfield, Paul; Mellen, Jonathan

    2012-05-16T23:59:59.000Z

    High temperature metallic solution growth is one of the most successful and versatile methods for single crystal growth, and is particularly suited for exploratory synthesis. The method commonly utilizes a centrifuge at room temperature and is very successful for the synthesis of single crystal phases that can be decanted from the liquid below the melting point of the silica ampoule. In this paper, we demonstrate the extension of this method that enables single crystal growth and flux decanting inside the furnace at temperatures above 1200°C. This not only extends the number of available metallic solvents that can be used in exploratory crystal growth but also can be particularly well suited for crystals that have a rather narrow exposed solidification surface in the equilibrium alloy phase diagram.

  9. SINGLE CRYSTAL NIOBIUM TUBES FOR PARTICLE COLLIDERS ACCELERATOR CAVITIES

    SciTech Connect (OSTI)

    MURPHY, JAMES E [University of Nevada, Reno] [University of Nevada, Reno

    2013-02-28T23:59:59.000Z

    The objective of this research project is to produce single crystal niobium (Nb) tubes for use as particle accelerator cavities for the Fermi laboratory’s International Linear Collider project. Single crystal Nb tubes may have superior performance compared to a polycrystalline tubes because the absence of grain boundaries may permit the use of higher accelerating voltages. In addition, Nb tubes that are subjected to the high temperature, high vacuum crystallization process are very pure and well annealed. Any impurity with a significantly higher vapor pressure than Nb should be decreased by the relatively long exposure at high temperature to the high vacuum environment. After application of the single crystal process, the surfaces of the Nb tubes are bright and shiny, and the tube resembles an electro polished Nb tube. For these reasons, there is interest in single crystal Nb tubes and in a process that will produce single crystal tubes. To convert a polycrystalline niobium tube into a single crystal, the tube is heated to within a few hundred ?C of the melting temperature of niobium, which is 2477 ?C. RF heating is used to rapidly heat the tube in a narrow zone and after reaching the operating temperature, the hot zone is slowly passed along the length of the tube. For crystallization tests with Nb tubes, the traverse rate was in the range of 1-10 cm per hour. All the crystallization tests in this study were performed in a water-cooled, stainless steel chamber under a vacuum of 5 x10-6 torr or better. In earliest tests of the single crystal growth process, the Nb tubes had an OD of 1.9 cm and a wall thickness of 0.15 mm. With these relatively small Nb tubes, the single crystal process was always successful in producing single crystal tubes. In these early tests, the operating temperature was normally maintained at 2200 ?C, and the traverse rate was 5 cm per hour. In the next test series, the Nb tube size was increased to 3.8 cm OD and the wall thickness was increased 0.18 mm and eventually to 0.21 mm. Again, with these larger tubes, single crystal tubes were usually produced by the crystallization process. The power supply was generally operated at full output during these tests, and the traverse rate was 5 cm per hour. In a few tests, the traverse rate was increased to 10 cm per hour, and at the faster traverse rate, single crystal growth was not achieved. In these tests with a faster traverse rate, it was thought that the tube was not heated to a high enough temperature to achieve single crystal growth. In the next series of tests, the tube OD was unchanged at 3.8 cm and the wall thickness was increased to 0.30 mm. The increased wall thickness made it difficult to reach an operating temperature above 2,000 ?C, and although the single crystal process caused a large increase in the crystal grains, no single crystal tubes were produced. It was assumed that the operating temperature in these tests was not high enough to achieve single crystal growth. In FY 2012, a larger power supply was purchased and installed. With the new power supply, temperatures above the melting point of Nb were easily obtained regardless of the tube thickness. A series of crystallization tests was initiated to determine if indeed the operating temperature of the previous tests was too low to achieve single crystal growth. For these tests, the Nb tube OD remained at 3.8 cm and the wall thickness was 0.30 mm. The first test had an operating temperature of 2,000 ?C. and the operating temperature was increased by 50 ?C increments for each successive test. The final test was very near the Nb melting temperature, and indeed, the Nb tube eventually melted in the center of the tube. These tests showed that higher temperatures did yield larger grain sizes if the traverse rate was held constant at 5 cm per hour, but no single crystal tubes were produced even at the highest operating temperature. In addition, slowing the traverse rate to as low as 1 cm per hour did not yield a single crystal tube regardless of operating temperature. At this time, it

  10. Apparatus And Method For Producing Single Crystal Metallic Objects

    DOE Patents [OSTI]

    Huang, Shyh-Chin (Latham, NY); Gigliotti, Jr., Michael Francis X. (Scotia, NY); Rutkowski, Stephen Francis (Duanesburg, NY); Petterson, Roger John (Fultonville, NY); Svec, Paul Steven (Scotia, NY)

    2006-03-14T23:59:59.000Z

    A mold is provided for enabling casting of single crystal metallic articles including a part-defining cavity, a sorter passage positioned vertically beneath and in fluid communication with the part-defining cavity, and a seed cavity positioned vertically beneath and in fluid communication with the sorter passage. The sorter passage includes a shape suitable for encouraging a single crystal structure in solidifying molten metal. Additionally, a portion of the mold between the sorter passage and the part-defining cavity includes a notch for facilitating breakage of a cast article proximate the notch during thermal stress build-up, so as to prevent mold breakage or the inclusion of part defects.

  11. CRACK STATISTIC OF CRYSTALLINE SILICON PHOTOVOLTAIC MODULES M. Kntges1

    E-Print Network [OSTI]

    the risk of cracks, as well as for statistical power loss assessment. Keywords: PV module, micro cracks separation, thus resulting in inactive cell parts. For this special case a clear assessment of the power loss this gap and provide a first statistic of cracks in PV modules for future power loss assessment

  12. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    SciTech Connect (OSTI)

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01T23:59:59.000Z

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  13. Research on stable, high-efficiency, large-area amorphous silicon based modules -- Task B

    SciTech Connect (OSTI)

    Mitchell, K.W.; Willet, D.R. (Siemens Solar Industries, Camarillo, CA (USA))

    1990-10-01T23:59:59.000Z

    This report documents progress in developing a stable, high- efficiency, four-terminal hybrid tandem module. The module consists of a semi-transparent, thin-film silicon:hydrogen alloy (TFS) top circuit and a copper indium diselenide (CuInSe{sub 2}) bottom circuit. Film deposition and patterning processes were successfully extended to 0.4-m{sup 2} substrates. A 33.2-W (8.4% efficient) module with a 3970-cm{sup 2} aperture area and a white back reflector was demonstrated; without the back reflector, the module produced 30.2 W (7.6% efficient). Placing a laminated, 31.6-W, 8.1%-efficient CuInSe{sub 2} module underneath this TFS module, with an air gap between the two, produces 11.2 W (2.9% efficient) over a 3883-cm{sup 2} aperture area. Therefore, the four-terminal tandem power output is 41.4 W, translating to a 10.5% aperture-area efficiency. Subsequently, a 37.8-W (9.7% aperture-area efficiency) CuInSe{sub 2} module was demonstrated with a 3905-cm{sup 2} aperture area. Future performances of single-junction and tandem modules of this size were modeled, and predicted power outputs exceed 50 W (13% efficient) for CuInSe{sub 2} and 65 W (17% efficient) for TFS/CuInSe{sub 2} tandem modules.

  14. Ultrafast dynamics of excitons in tetracene single crystals

    SciTech Connect (OSTI)

    Birech, Zephania; Schwoerer, Heinrich, E-mail: heso@sun.ac.za [Laser Research Institute, Stellenbosch University, Stellenbosch 7600 (South Africa)] [Laser Research Institute, Stellenbosch University, Stellenbosch 7600 (South Africa); Schwoerer, Markus [Department of Physics, University of Bayreuth, Bayreuth (Germany)] [Department of Physics, University of Bayreuth, Bayreuth (Germany); Schmeiler, Teresa; Pflaum, Jens [Experimental Physics VI, University of Würzburg and Bavarian Center for Applied Energy Research, Würzburg (Germany)] [Experimental Physics VI, University of Würzburg and Bavarian Center for Applied Energy Research, Würzburg (Germany)

    2014-03-21T23:59:59.000Z

    Ultrafast exciton dynamics in free standing 200 nm thin tetracene single crystals were studied at room temperature by femtosecond transient absorption spectroscopy in the visible spectral range. The complex spectrally overlapping transient absorption traces of single crystals were systematically deconvoluted. From this, the ultrafast dynamics of the ground, excited, and transition states were identified including singlet exciton fission into two triplet excitons. Fission is generated through both, direct fission of higher singlet states S{sub n} on a sub-picosecond timescale, and thermally activated fission of the singlet exciton S{sub 1} on a 40 ps timescale. The high energy Davydov component of the S{sub 1} exciton is proposed to undergo fission on a sub-picoseconds timescale. At high density of triplet excitons their mutual annihilation (triplet-triplet annihilation) occurs on a <10 ps timescale.

  15. Research on stable, high-efficiency, amorphous silicon multijunction modules

    SciTech Connect (OSTI)

    Catalano, A.; Bennet, M.; Chen, L.; Fieselmann, B.; Li, Y.; Newton, J.; Podlesny, R.; Wiedeman, S.; Yang, L. (Solarex Corp., Newtown, PA (United States). Thin Film Div.)

    1991-08-01T23:59:59.000Z

    The present effort seeks to develop modules with a stabilized performance of 8.8% aperture area conversion after 600 hours light exposure (AM1.5) at 50{degrees}C in modules with aperture areas over 900 cm{sup 2}. Good progress towards this goal has been obtained with the demonstration of 9.8% initial performance in a submodule incorporating devices with relatively thin middle junction i-layer thickness of 4000{Angstrom}. Devices with this design have been shown to lose about 10% of their initial performance after 1000 hours of exposure. Modules lose between 18--23% largely due to light induced shunting, probably related to the contact metallization. Achieving long-term stabilized efficiencies of 12% or more requires substantial improvements in materials and devices. Our analysis has shown that substantial optical losses occur at both front and rear contacts which we hope to address with ZnO films prepared by CVD and sputtering processes now under development. Further progress is doped layers and alloys are also needed. Fundamental studies of the relationship between material structure and processes (particularly the effect of hydrogen dilution) are reported here. 32 refs., 28 figs., 9 tabs.

  16. Growth and characterization of lithium yttrium borate single crystals

    SciTech Connect (OSTI)

    Singh, A. K.; Singh, S. G.; Tyagi, M.; Desai, D. G.; Sen, Shashwati [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai- 400085 (India)

    2014-04-24T23:59:59.000Z

    Single crystals of 0.1% Ce doped Li{sub 6}Y(BO{sub 3}){sub 3} have been grown using the Czochralski technique. The photoluminescence study of these crystals shows a broad emission at ? 420 nm corresponding to Ce{sub 3+} emission from 5d?4f energy levels. The decay profile of this emission shows a fast response of ? 28 ns which is highly desirable for detector applications.

  17. Electrical production testing of the D0 Silicon microstrip tracker detector modules

    SciTech Connect (OSTI)

    D0, SMT Production Testing Group; /Fermilab

    2006-03-01T23:59:59.000Z

    The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

  18. Antenna-coupled silicon-organic hybrid integrated photonic crystal modulator for broadband electromagnetic wave detection

    E-Print Network [OSTI]

    Zhang, Xingyu; Subbaraman, Harish; Wang, Shiyi; Zhan, Qiwen; Luo, Jingdong; Jen, Alex K -Y; Chung, Chi-jui; Yan, Hai; Pan, Zeyu; Nelson, Robert L; Lee, Charles Y -C; Chen, Ray T

    2015-01-01T23:59:59.000Z

    In this work, we design, fabricate and characterize a compact, broadband and highly sensitive integrated photonic electromagnetic field sensor based on a silicon-organic hybrid modulator driven by a bowtie antenna. The large electro-optic (EO) coefficient of organic polymer, the slow-light effects in the silicon slot photonic crystal waveguide (PCW), and the broadband field enhancement provided by the bowtie antenna, are all combined to enhance the interaction of microwaves and optical waves, enabling a high EO modulation efficiency and thus a high sensitivity. The modulator is experimentally demonstrated with a record-high effective in-device EO modulation efficiency of r33=1230pm/V. Modulation response up to 40GHz is measured, with a 3-dB bandwidth of 11GHz. The slot PCW has an interaction length of 300um, and the bowtie antenna has an area smaller than 1cm2. The bowtie antenna in the device is experimentally demonstrated to have a broadband characteristics with a central resonance frequency of 10GHz, as we...

  19. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    SciTech Connect (OSTI)

    Sopori, B. L.

    2007-08-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  20. Large pyramid shaped single crystals of BiFeO{sub 3} by solvothermal synthesis method

    SciTech Connect (OSTI)

    Sornadurai, D.; Ravindran, T. R.; Paul, V. Thomas; Sastry, V. Sankara [Condensed Matter Physics Division, Materials Science Group, Physical Metallurgy Division, Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamil Nadu (India); Condensed Matter Physics Division, Materials Science Group (India)

    2012-06-05T23:59:59.000Z

    Synthesis parameters are optimized in order to grow single crystals of multiferroic BiFeO{sub 3}. 2 to 3 mm size pyramid (tetrahedron) shaped single crystals were successfully obtained by solvothermal method. Scanning electron microscopy with EDAX confirmed the phase formation. Raman scattering spectra of bulk BiFeO3 single crystals have been measured which match well with reported spectra.

  1. Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers

    E-Print Network [OSTI]

    Zhang, Xingyu; Luo, Jingdong; Jen, Alex K -Y; Chen, Ray T

    2014-01-01T23:59:59.000Z

    We design and demonstrate a compact, low-power, low-dispersion and broadband optical modulator based on electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW). The EO polymer is engineered for large EO activity and near-infrared transparency. The half-wave switching-voltage is measured to be V{\\pi}=0.97V over optical spectrum range of 8nm, corresponding to a record-high effective in-device r33 of 1190pm/V and V{\\pi} L of 0.291Vmm in a push-pull configuration. Excluding the slow-light effect, we estimate the EO polymer is poled with an ultra-high efficiency of 89pm/V in the slot. In addition, to achieve high-speed modulation, silicon PCW is selectively doped to reduce RC time delay. The 3-dB RF bandwidth of the modulator is measured to be 11GHz, and a modulation response up to 40GHz is observed.

  2. Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

    E-Print Network [OSTI]

    Ding, Yunhong; Xiao, Sanshui; Hu, Hao; Frandsen, Lars Hagedorn; Mortensen, N Asger; Yvind, Kresten

    2015-01-01T23:59:59.000Z

    Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of Fermi level enables electro-optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage.

  3. Synthesis of mesoporous zeolite single crystals with cheap porogens

    SciTech Connect (OSTI)

    Tao Haixiang; Li Changlin; Ren Jiawen [Key Laboratory for Advanced Materials, Research Institute of Industrial Catalysis, East China University of Science and Technology, Shanghai 200237 (China); Wang Yanqin, E-mail: wangyanqin@ecust.edu.cn [Key Laboratory for Advanced Materials, Research Institute of Industrial Catalysis, East China University of Science and Technology, Shanghai 200237 (China); Lu Guanzhong, E-mail: gzhlu@ecust.edu.cn [Key Laboratory for Advanced Materials, Research Institute of Industrial Catalysis, East China University of Science and Technology, Shanghai 200237 (China)

    2011-07-15T23:59:59.000Z

    Mesoporous zeolite (silicalite-1, ZSM-5, TS-1) single crystals have been successfully synthesized by adding soluble starch or sodium carboxymethyl cellulose (CMC) to a conventional zeolite synthesis system. The obtained samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), nitrogen sorption analysis, {sup 27}Al magic angle spinning nuclear magnetic resonance ({sup 27}Al MAS NMR), temperature-programmed desorption of ammonia (NH{sub 3}-TPD) and ultraviolet-visible spectroscopy (UV-vis). The SEM images clearly show that all zeolite crystals possess the similar morphology with particle size of about 300 nm, the TEM images reveal that irregular intracrystal pores are randomly distributed in the whole crystal. {sup 27}Al MAS NMR spectra indicate that nearly all of the Al atoms are in tetrahedral co-ordination in ZSM-5, UV-vis spectra confirm that nearly all of titanium atoms are incorporated into the framework of TS-1. The catalytic activity of meso-ZSM-5 in acetalization of cyclohexanone and meso-TS-1 in hydroxylation of phenol was also studied. The synthesis method reported in this paper is cost-effective and environmental friendly, can be easily expended to prepare other hierarchical structured zeolites. - Graphical abstract: Mesoporous zeolite single crystals were synthesized by using cheap porogens as template. Highlights: > Mesoporous zeolite (silicalite-1, ZSM-5, TS-1) single crystals were synthesized. > Soluble starch or sodium carboxymethyl cellulose (CMC) was used as porogens. > The mesoporous zeolites had connected mesopores although closed pores existed. > Higher catalytic activities were obtained.

  4. Acquisition of Single Crystal Growth and Characterization Equipment

    SciTech Connect (OSTI)

    Maple, M. Brian; Zocco, Diego A.

    2008-12-09T23:59:59.000Z

    Final Report for DOE Grant No. DE-FG02-04ER46178 'Acquisition of Single Crystal Growth and Characterization Equipment'. There is growing concern in the condensed matter community that the need for quality crystal growth and materials preparation laboratories is not being met in the United States. It has been suggested that there are too many researchers performing measurements on too few materials. As a result, many user facilities are not being used optimally. The number of proficient crystal growers is too small. In addition, insufficient attention is being paid to the enterprise of finding new and interesting materials, which is the driving force behind much of condensed matter research and, ultimately, technology. While a detailed assessment of this situation is clearly needed, enough evidence of a problem already exists to compel a general consensus that the situation must be addressed promptly. This final report describes the work carried out during the last four years in our group, in which a state-of-the-art single crystal growth and characterization facility was established for the study of novel oxides and intermetallic compounds of rare earth, actinide and transition metal elements. Research emphasis is on the physics of superconducting (SC), magnetic, heavy fermion (HF), non-Fermi liquid (NFL) and other types of strongly correlated electron phenomena in bulk single crystals. Properties of these materials are being studied as a function of concentration of chemical constituents, temperature, pressure, and magnetic field, which provide information about the electronic, lattice, and magnetic excitations at the root of various strongly correlated electron phenomena. Most importantly, the facility makes possible the investigation of material properties that can only be achieved in high quality bulk single crystals, including magnetic and transport phenomena, studies of the effects of disorder, properties in the clean limit, and spectroscopic and scattering studies through efforts with numerous collaborators. These endeavors will assist the effort to explain various outstanding theoretical problems, such as order parameter symmetries and electron-pairing mechanisms in unconventional superconductors, the relationship between superconductivity and magnetic order in certain correlated electron systems, the role of disorder in non-Fermi liquid behavior and unconventional superconductivity, and the nature of interactions between localized and itinerant electrons in these materials. Understanding the mechanisms behind strongly correlated electron behavior has important technological implications.

  5. Single crystal metal wedges for surface acoustic wave propagation

    DOE Patents [OSTI]

    Fisher, Edward S. (Wheaton, IL)

    1982-01-01T23:59:59.000Z

    An ultrasonic testing device has been developed to evaluate flaws and inhomogeneities in the near-surface region of a test material. A metal single crystal wedge is used to generate high frequency Rayleigh surface waves in the test material surface by conversion of a slow velocity, bulk acoustic mode in the wedge into a Rayleigh wave at the metal-wedge test material interface. Particular classes of metals have been found to provide the bulk acoustic modes necessary for production of a surface wave with extremely high frequency and angular collimation. The high frequency allows flaws and inhomogeneities to be examined with greater resolution. The high degree of angular collimation for the outgoing ultrasonic beam permits precision angular location of flaws and inhomogeneities in the test material surface.

  6. Studying the magnetic properties of CoSi single crystals

    SciTech Connect (OSTI)

    Narozhnyi, V. N., E-mail: narozhnyivn@gmail.com; Krasnorussky, V. N. [Russian Academy of Sciences, Vereshchagin Institute for High Pressure Physics (Russian Federation)

    2013-05-15T23:59:59.000Z

    The magnetic properties of CoSi single crystals have been measured in a range of temperatures T = 5.5-450 K and magnetic field strengths H {<=} 11 kOe. A comparison of the results for crystals grown in various laboratories allowed the temperature dependence of magnetic susceptibility {chi}(T) = M(T)/H to be determined for a hypothetical 'ideal' (free of magnetic impurities and defects) CoSi crystal. The susceptibility of this ideal crystal in the entire temperature range exhibits a diamagnetic character. The {chi}(T) value significantly increases in absolute value with decreasing temperature and exhibits saturation at the lowest temperatures studied. For real CoSi crystals of four types, paramagnetic contributions to the susceptibility have been evaluated and nonlinear (with respect to the field) contributions to the magnetization have been separated and taken into account in the calculations of {chi}(T).

  7. Shock compression experiments on Lithium Deuteride single crystals.

    SciTech Connect (OSTI)

    Knudson, Marcus D.; Desjarlais, Michael P.; Lemke, Raymond W.

    2014-10-01T23:59:59.000Z

    S hock compression exper iments in the few hundred GPa (multi - Mabr) regime were performed on Lithium Deuteride (LiD) single crystals . This study utilized the high velocity flyer plate capability of the Sandia Z Machine to perform impact experiments at flyer plate velocities in the range of 17 - 32 km/s. Measurements included pressure, density, and temperature between ~200 - 600 GPa along the Principal Hugoniot - the locus of end states achievable through compression by large amplitude shock waves - as well as pressure and density of re - shock states up to ~900 GPa . The experimental measurements are compared with recent density functional theory calculations as well as a new tabular equation of state developed at Los Alamos National Labs.

  8. Single crystal metal wedges for surface acoustic wave propagation

    DOE Patents [OSTI]

    Fisher, E.S.

    1980-05-09T23:59:59.000Z

    An ultrasonic testing device has been developed to evaluate flaws and inhomogeneities in the near-surface region of a test material. A metal single crystal wedge is used to generate high frequency Rayleigh surface waves in the test material surface by conversion of a slow velocity, bulk acoustic mode in the wedge into a Rayleigh wave at the metal-wedge test material interface. Particular classes of metals have been found to provide the bulk acoustic modes necessary for production of a surface wave with extremely high frequency and angular collimation. The high frequency allows flaws and inhomogeneities to be examined with greater resolution. The high degree of angular collimation for the outgoing ultrasonic beam permits precision angular location of flaws and inhomogeneities in the test material surface.

  9. Growth and characterization of diammonium copper disulphate hexahydrate single crystal

    SciTech Connect (OSTI)

    Siva Sankari, R. [Department of Physics, Agni College of Technology, Thalambur, Chennai 603103 (India); Perumal, Rajesh Narayana, E-mail: r.shankarisai@gmail.com [Department of Physics, SSN College of Engineering, Kalavakkam, Chennai 603110 (India)

    2014-03-01T23:59:59.000Z

    Graphical abstract: Diammonium copper disulphate hexahydrate (DACS) is one of the most promising inorganic dielectric crystals with exceptional mechanical properties. Good quality crystals of DACS were grown by using solution method in a period of 30 days. The grown crystals were subjected to single crystal X-ray diffraction analysis in order to establish their crystalline nature. Thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis were performed for the crystal. Several solid state physical parameters have been determined for the grown crystals. The dielectric constant and the dielectric loss and AC conductivity of the grown crystal were studied as a function of frequency and temperature has been calculated and plotted. - Highlights: • Diammonium copper disulphate is grown for the first time and CCDC number obtained. • Thermal analysis is done to see the stability range of the crystals. • Band gap and UV cut off wavelength of the crystal are determined to be 2.4 eV and 472.86 nm, respectively. • Dielectric constant, dielectric loss and AC conductivity are plotted as a function of applied field. - Abstract: Diammonium copper disulphate hexahydrate is one of the most promising inorganic crystals with exceptional dielectric properties. A good quality crystal was harvested in a 30-day period using solution growth method. The grown crystal was subjected to various characterization techniques like single crystal X-ray diffraction analysis, thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis. Unit cell dimensions of the grown crystal have been identified from XRD studies. Functional groups of the title compounds have been identified from FTIR studies. Thermal stability of the samples was checked by TG/DTA studies. Band gap of the crystal was calculated. The dielectric constant and dielectric loss were studied as a function of frequency of the applied field. AC conductivity was plotted as a function of temperature.

  10. Method of forming buried oxide layers in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir City, TN)

    2000-01-01T23:59:59.000Z

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  11. Single-crystal YAG fiber optics for the transmission of high energy laser energy

    E-Print Network [OSTI]

    Single-crystal YAG fiber optics for the transmission of high energy laser energy X.S. Zhua , James. Thus, it is reasonable to assume that YAG fibers will have high laser damage thresholds. The optical of YAG fiber grown has been about 60 cm. Keywords: Infrared fiber optics, single-crystal fibers, oxide

  12. Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire

    E-Print Network [OSTI]

    Boyer, Edmond

    Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films Cedex 9, France (Dated: 15 March 2011) Uniform single layer graphene was grown on single-crystal Ir. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown

  13. Oxygen diffusion in titanite: Lattice diffusion and fast-path diffusion in single crystals

    E-Print Network [OSTI]

    Watson, E. Bruce

    Oxygen diffusion in titanite: Lattice diffusion and fast-path diffusion in single crystals X June 2006 Editor: P. Deines Abstract Oxygen diffusion in natural and synthetic single-crystal titanite be recognized as responsible for oxygen diffusion. The diffusion profiles showed two segments: a steep one close

  14. A LIFETIME PREDICTION MODEL FOR SINGLE CRYSTAL SUPERALLOYS SUBJECTED TO THERMOMECHANICAL

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    materials tensile, creep and LCF test data at different temperatures. Some parameters, independentA LIFETIME PREDICTION MODEL FOR SINGLE CRYSTAL SUPERALLOYS SUBJECTED TO THERMOMECHANICAL CREEP for Single Crystal Superalloys operated at high temperatures and subjected to creep, fatigue and oxidation

  15. Radiation tolerance of piezoelectric bulk single-crystal aluminum nitride

    SciTech Connect (OSTI)

    David A. Parks; Bernhard R. Tittmann

    2014-07-01T23:59:59.000Z

    For practical use in harsh radiation environments, we pose selection criteria for piezoelectric materials for nondestructive evaluation (NDE) and material characterization. Using these criteria, piezoelectric aluminum nitride is shown to be an excellent candidate. The results of tests on an aluminumnitride-based transducer operating in a nuclear reactor are also presented. We demonstrate the tolerance of single-crystal piezoelectric aluminum nitride after fast and thermal neutron fluences of 1.85 × 1018 neutron/cm2 and 5.8 × 1018 neutron/cm2, respectively, and a gamma dose of 26.8 MGy. The radiation hardness of AlN is most evident from the unaltered piezoelectric coefficient d33, which measured 5.5 pC/N after a fast and thermal neutron exposure in a nuclear reactor core for over 120 MWh, in agreement with the published literature value. The results offer potential for improving reactor safety and furthering the understanding of radiation effects on materials by enabling structural health monitoring and NDE in spite of the high levels of radiation and high temperatures, which are known to destroy typical commercial ultrasonic transducers.

  16. Single Crystal Diamond Beam Position Monitors with Radiofrequency Electronic Readout

    SciTech Connect (OSTI)

    Solar, B.; Graafsma, H.; Potdevin, G.; Trunk, U. [Hasylab, Deutsches Elektronen Synchroton, Hamburg (Germany); Morse, J.; Salome, M. [Instrumentation Services and Development Division, European Synchroton Radiation Facility, Grenoble (France)

    2010-06-23T23:59:59.000Z

    Over the energy range 5{approx}30 keV a suitably contacted, thin ({approx}100 {mu}m) diamond plate can be operated in situ as a continuous monitor of X-ray beam intensity and position as the diamond absorbs only a small percentage of the incident beam. Single crystal diamond is a completely homogeneous material showing fast (ns), spatially uniform signal response and negligible (

  17. Field emission properties of single crystal chromium disilicide nanowires

    SciTech Connect (OSTI)

    Valentin, L. A.; Carpena-Nunez, J.; Yang, D.; Fonseca, L. F. [Department of Physics, University of Puerto Rico, Rio Piedras Campus, P.O. Box 70377, San Juan, 00931 (Puerto Rico)

    2013-01-07T23:59:59.000Z

    The composition, crystal structure, and field emission properties of high-crystallinity chromium disilicide (CrSi{sub 2}) nanowires synthesized by a vapor deposition method have been studied. High resolution transmission electron microscopy, energy dispersive spectroscopy, and selected area electron diffraction studies confirm the single-crystalline structure and composition of the CrSi{sub 2} nanowires. Field emission measurements show that an emission current density of 0.1 {mu}A/cm{sup 2} was obtained at a turn-on electric field intensity of 2.80 V/{mu}m. The maximum emission current measured was 1.86 mA/cm{sup 2} at 3.6 V/{mu}m. The relation between the emission current density and the electric field obtained follows the Fowler-Nordheim equation, with an enhancement coefficient of 1140. The electrical conductivity of single nanowires was measured by using four-point-probe specialized microdevices at different temperatures, and the calculated values are close to those reported in previous studies for highly conductive single crystal bulk CrSi{sub 2}. The thermal tolerance of the nanowires was studied up to a temperature of 1100 Degree-Sign C. The stability of the field emission current, the I-E values, their thermal tolerance, and high electrical conductivity make CrSi{sub 2} nanowires a promising material for field emission applications.

  18. Solidification microstructures in single-crystal stainless steel melt pools

    SciTech Connect (OSTI)

    Sipf, J.B.; Boatner, L.A.; David, S.A.

    1994-03-01T23:59:59.000Z

    Development of microstructure of stationary melt pools of oriented stainless steel single crystals (70%Fe-15%Ni-15%Cr was analyzed. Stationary melt pools were formed by electron-beam and gas-tungsten-arc heating on (001), (011), and (111) oriented planes of the austenitic, fcc-alloy crystals. Characterization and analysis of resulting microstructure was carried out for each crystallographic plane and welding method. Results showed that crystallography which favors ``easy growth`` along the <100> family of directions is a controlling factor in the microstructural formation along with the melt-pool shape. The microstructure was found to depend on the melting method, since each method forms a unique melt-pool shape. These results are used in making a three-dimensional reconstruction of the microstructure for each plane and melting method employed. This investigation also suggests avenues for future research into the microstructural properties of electron-beam welds as well as providing an experimental basis for mathematical models for the prediction of solidification microstructures.

  19. Thermopower, electrical and Hall conductivity of undoped and doped iron disilicide single crystals

    SciTech Connect (OSTI)

    Heinrich, A.; Behr, G.; Griessmann, H.; Teichert, S.; Lange, H.

    1997-07-01T23:59:59.000Z

    The electrical transport properties of {beta}-FeSi{sub 2} single crystals have been investigated in dependence on the purity of the source material and on doping with 3d transition metals. The transport properties included are electrical conductivity, Hall conductivity and thermopower mainly in the temperature range from 4K to 300K. The single crystals have been prepared by chemical transport reaction in a closed system with iodine as transport agent. In undoped single crystals prepared with 5N Fe both electrical conductivity and thermopower depend on the composition within the homogeneity range of {beta}-FeSi{sub 2} which is explained by different intrinsic defects at the Si-rich and Fe-rich phase boundaries. In both undoped and doped single crystals impurity band conduction is observed at low temperatures but above 100K extrinsic behavior determined by shallow impurity states. The thermopower shows between 100K and 200K a significant phonon drag contribution which depends on intrinsic defects and additional doping. The Hall resistivity is considered mainly with respect to an anomalous contribution found in p-type and n-type single crystals and thin films. In addition doped single crystals show at temperatures below about 130K an hysteresis of the Hall voltage. These results make former mobility data uncertain. Comparison will be made between the transport properties of single crystals and polycrystalline material.

  20. Growth and properties of Lithium Salicylate single crystals

    SciTech Connect (OSTI)

    Zaitseva, N; Newby, J; Hull, G; Saw, C; Carman, L; Cherepy, N; Payne, S

    2009-02-13T23:59:59.000Z

    An attractive feature of {sup 6}Li containing fluorescence materials that determines their potential application in radiation detection is the capture reaction with slow ({approx}< 100 keV) neutrons: {sup 6}Li + n = {sup 4}He + {sup 3}H + 4.8MeV. The use of {sup 6}Li-salicylate (LiSal, LiC{sub 6}H{sub 5}O{sub 3}) for thermal neutron detection was previously studied in liquid and polycrystalline scintillators. The studies showed that both liquid and polycrystalline LiSal scintillators could be utilized in pulse shape discrimination (PSD) techniques that enable separation of neutrons from the background gamma radiation. However, it was found that the efficiency of neutron detection using LiSal in liquid solutions was severely limited by its low solubility in commonly used organic solvents like, for example, toluene or xylene. Better results were obtained with neutron detectors containing the compound in its crystalline form, such as pressed pellets, or microscopic-scale (7-14 micron) crystals dispersed in various media. The expectation drown from these studies was that further improvement of pulse height, PSD, and efficiency characteristics could be reached with larger and more transparent LiSal crystals, growth of which has not been reported so far. In this paper, we present the first results on growth and characterization of relatively large, a cm-scale size, single crystals of LiSal with good optical quality. The crystals were grown both from aqueous and anhydrous (methanol) media, mainly for neutron detection studies. However, the results on growth and structural characterization may be interesting for other fields where LiSal, together with other alkali metal salicylates, is used for biological, medical, and chemical (as catalyst) applications.

  1. Tantalum Shear Modulus from Homogenization of Single Crystal Data

    SciTech Connect (OSTI)

    Becker, R

    2007-09-14T23:59:59.000Z

    Elastic constants for tantalum single crystals have been calculated by Orlikowski, et al. [1] for a broad range of temperatures and pressures. These moduli can be utilized directly in continuum crystal simulations or dislocation dynamics calculations where the individual grains of the polycrystalline material are explicitly represented. For simulations on a larger size scale, the volume of material represented by the quadrature points of the simulation codes includes many grains, and average moduli are needed. Analytic bounding and averaging schemes exist, but since these do not account for nonuniform stress and strain within the interacting grains, the upper and lower bounds tend to diverge as the crystal anisotropy increases. Local deformation and stress equilibrium accommodate the anisotropic response of the individual grains. One method of including grain interactions in shear modulus averaging calculations is through a highly-descretized finite element model of a polycrystal volume. This virtual test sample (VTS) can be probed to determine the average response of the polycrystal. The desire to obtain isotropic moduli imposes attributes on the VTS. The grains should be equiax and the crystal orientation distribution function should be random. For these simulations, a cube, 300 {micro}m on a side, was discretized with 1 million finite elements on a regular rectangular mesh. The mesh was seeded with 1000 grains generated using a constrained-random placement algorithm, Figure 1. Since the orientations were simply painted in the mesh, the grain boundaries are irregular. The orientation distribution function is shown as pole figure in Figure 2. It has the appearance of being random. Analysis of the simulation results will be used to determine if the randomness of the texture and number of grains are adequate.

  2. Broadband energy-efficient optical modulation by hybrid integration of silicon nanophotonics and organic electro-optic polymer

    E-Print Network [OSTI]

    Zhang, Xingyu; Subbaraman, Harish; Luo, Jingdong; Jen, Alex K -Y; Chung, Chi-jui; Yan, Hai; Pan, Zeyu; Nelson, Robert L; Chen, Ray T

    2015-01-01T23:59:59.000Z

    Silicon-organic hybrid integrated devices have emerging applications ranging from high-speed optical interconnects to photonic electromagnetic-field sensors. Silicon slot photonic crystal waveguides (PCWs) filled with electro-optic (EO) polymers combine the slow-light effect in PCWs with the high polarizability of EO polymers, which promises the realization of high-performance optical modulators. In this paper, a broadband, power-efficient, low-dispersion, and compact optical modulator based on an EO polymer filled silicon slot PCW is presented. A small voltage-length product of V{\\pi}*L=0.282Vmm is achieved, corresponding to an unprecedented record-high effective in-device EO coefficient (r33) of 1230pm/V. Assisted by a backside gate voltage, the modulation response up to 50GHz is observed, with a 3-dB bandwidth of 15GHz, and the estimated energy consumption is 94.4fJ/bit at 10Gbit/s. Furthermore, lattice-shifted PCWs are utilized to enhance the optical bandwidth by a factor of ~10X over other modulators bas...

  3. Theoretical nonlinear response of complex single crystal under multi-axial tensile loading

    E-Print Network [OSTI]

    Misra, Anil; Ching, W. Y.

    2013-03-19T23:59:59.000Z

    The mechanical properties of single crystals are of interest as they represent the behavior of the basic building blocks. Using the density functional theory based ab initio technique we have devised an approach to analyze the behavior of single...

  4. Molecular Surface Chemistry by Metal Single Crystals and Nanoparticles from Vacuum to High Pressure.

    SciTech Connect (OSTI)

    Somorjai, Gabor A.; Park, Jeong Y.

    2008-04-05T23:59:59.000Z

    Model systems for studying molecular surface chemistry have evolved from single crystal surfaces at low pressure to colloidal nanoparticles at high pressure. Low pressure surface structure studies of platinum single crystals using molecular beam surface scattering and low energy electron diffraction techniques probe the unique activity of defects, steps and kinks at the surface for dissociation reactions (H-H, C-H, C-C, O{double_bond}O bonds). High-pressure investigations of platinum single crystals using sum frequency generation vibrational spectroscopy have revealed the presence and the nature of reaction intermediates. High pressure scanning tunneling microscopy of platinum single crystal surfaces showed adsorbate mobility during a catalytic reaction. Nanoparticle systems are used to determine the role of metal-oxide interfaces, site blocking and the role of surface structures in reactive surface chemistry. The size, shape and composition of nanoparticles play important roles in determining reaction activity and selectivity.

  5. Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals Probed by Femtosecond Transient Absorption and Reflectivity. Carrier Dynamics in a-Fe2O3 (0001) Thin Films and...

  6. Superelastic metal-insulator phase transition in single-crystal VO[subscript 2] nanobeams

    E-Print Network [OSTI]

    Fan, W.

    We investigated external-stress-induced metal-insulator phase transitions in cantilevered single-crystal VO[subscript 2] nanobeams at variable temperatures using a combined theoretical and experimental approach. An atomic ...

  7. Multisource-sputtered ErBa/sub 2/Cu/sub 3/O/sub 7-x/ films on single-crystal and buffered crystalline substrates

    SciTech Connect (OSTI)

    Simon, R.W.; Platt, C.E.; Lee, A.E.; Daly, K.P.; Wagner, M.K.

    1988-09-01T23:59:59.000Z

    High-quality superconducting films of erbium-barium-copper-oxide have been produced in a multisource sputtering system on a variety of substrates, including buffered sapphire and silicon wafers as well as various single-crystal materials. Fine-grained polycrystalline films with narrow (<4 K) resistive transitions have been grown on a number of different substrates. The use of erbium in the 1-2-3 compound leads to improved film morphology and to more forgiving conditions for establishing of the superconducting phase. Sputtered neutral mass spectroscopy (SNMS) yields useful information about the compositional profile of the films.

  8. Testing and Analysis for Lifetime Prediction of Crystalline Silicon PV Modules Undergoing Degradation by System Voltage Stress: Preprint

    SciTech Connect (OSTI)

    Hacke, P.; Smith, R.; Terwiliger, K.; Glick, S.; Jordan, D.; Johnston, S.; Kempe, M.; Kurtz, S.

    2012-07-01T23:59:59.000Z

    Acceleration factors are calculated for crystalline silicon PV modules under system voltage stress by comparing the module power during degradation outdoors to that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined, and the probability of module failure at an arbitrary temperature is predicted. To obtain statistical data for multiple modules over the course of degradation in-situ of the test chamber, dark I-V measurements are obtained and transformed using superposition, which is found well suited for rapid and quantitative evaluation of potential-induced degradation. It is determined that shunt resistance measurements alone do not represent the extent of power degradation. This is explained with a two-diode model analysis that shows an increasing second diode recombination current and ideality factor as the degradation in module power progresses. Failure modes of the modules stressed outdoors are examined and compared to those stressed in accelerated tests.

  9. Effective lifetimes exceeding 300 ?s in gettered p-type epitaxial kerfless silicon for photovoltaics

    E-Print Network [OSTI]

    Powell, D. M.

    We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low ...

  10. Performance of a silicon photovoltaic module under enhanced illumination and selective filtration of incoming radiation with simultaneous cooling

    SciTech Connect (OSTI)

    Maiti, Subarna; Vyas, Kairavi; Ghosh, Pushpito K. [Process Design and Engineering Cell, Central Salt and Marine Chemicals Research Institute (Council of Scientific and Industrial Research), G.B. Marg, Bhavnagar 364002, Gujarat (India)

    2010-08-15T23:59:59.000Z

    A promising option to reduce the cost of silicon photovoltaic systems is to concentrate the sunlight incident on the solar cells to increase the output power. However, this leads to higher module temperatures which affects performance adversely and may also cause long term damage. Proper cooling is therefore necessary to operate the system under concentrated radiation. The present work was undertaken to circumvent the problem in practical manner. A suitable liquid, connected to a heat exchanger, was placed in the housing of the photovoltaic module and unwanted wavelengths of solar radiation were filtered out to minimise overheating of the cells. The selection of the liquid was based on factors such as boiling point, transparency towards visible radiation, absorption of infrared and ultraviolet radiation, stability, flow characteristics, heat transfer properties, and electrical nonconductivity. Using a square parabolic type reflector, more than two fold increase in output power was realised on a clear sunny day employing a 0.13 m{sup 2} silicon solar module. Without the cooling arrangement the panel temperature rose uncontrollably. (author)

  11. EXPERIMENTAL VERIFICATION OF INTERNAL FRICTION AT GHZ FREQUENCIES IN DOPED SINGLE-CRYSTAL SILICON

    E-Print Network [OSTI]

    Afshari, Ehsan

    losses into account. Recent work in MEMS resonators has started to utilize some of the electrical of the energy loss in a resonator, also has similar limits that arise from practical implementation, including Eugene Hwang and Sunil A. Bhave OxideMEMS Lab, School of Electrical and Computer Engineering, Cornell

  12. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Sun, Yugang (Naperville, IL); Menard, Etienne (Durham, NC)

    2012-06-12T23:59:59.000Z

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  13. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    University of Illinois (Urbana, IL)

    2009-04-21T23:59:59.000Z

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  14. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    SciTech Connect (OSTI)

    Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne

    2014-06-17T23:59:59.000Z

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  15. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

    DOE Patents [OSTI]

    Charache, G.W.; Baldasaro, P.F.; Nichols, G.J.

    1998-06-23T23:59:59.000Z

    A thermophotovoltaic energy conversion device and a method for making the device are disclosed. The device includes a substrate formed from a bulk single crystal material having a bandgap (E{sub g}) of 0.4 eV < E{sub g} < 0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers. 12 figs.

  16. Research on stable, high-efficiency amorphous silicon multijunction modules. Annual subcontract report, 1 November 1992--31 May 1993

    SciTech Connect (OSTI)

    Ghosh, M.; Kampas, F.; Xi, J. [Advanced Photovoltaic Systems, Inc., Princeton, NJ (United States)

    1993-09-01T23:59:59.000Z

    This report describes progress made in the first half of Phase II of a three-phase program to develop high-efficiency, same-band-gap, amorphous-silicon, tandem-junction modules. Results for both 1-cm- {sup 2} devices and 0.3-m (0.09-m{sup 2}) modules are given. considerable effort was devoted to finding a device structure and layer conditions that reconcile the conflicting requirements of a good ``tunnel junction`` contact between the two stacks and a high-efficiency device. High-band-gap p{sub 2}layers, which enable good voltage and current from the second stack, were found to result in poor tunnel junctions. The best results were obtained by using a thin (1-nm-thick) p{sup +} layer (no carbon) between the n{sub 1} and p{sub 2} layers of the device.

  17. Performance of 3-Sun Mirror Modules on Sun Tracking Carousels on Flat Roof Buildings

    SciTech Connect (OSTI)

    Fraas, Dr. Lewis [JX Crystals, Inc.; Avery, James E. [JX Crystals, Inc.; Minkin, Leonid M [ORNL; Maxey, L Curt [ORNL; Gehl, Anthony C [ORNL; Hurt, Rick A [ORNL; Boehm, Robert F [ORNL

    2008-01-01T23:59:59.000Z

    Commercial buildings represent a near term market for cost competitive solar electric power provided installation costs and solar photovoltaic module costs can be reduced. JX Crystals has developed a carousel sun tracker that is prefabricated and can easily be deployed on building flat roof tops without roof penetration. JX Crystals is also developing 3-sun PV mirror modules where less expensive mirrors are substituted for two-thirds of the expensive single crystal silicon solar cell surface area. Carousels each with four 3-sun modules have been set up at two sites, specifically at Oak Ridge National Lab and at the University of Nevada in Las Vegas. The test results for these systems are presented.

  18. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2008-09-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  19. Ultra-Compact Polymer and Silicon Modulator Design Based on Photonic Crystal Ring Resonators

    E-Print Network [OSTI]

    Zhou, Weidong

    loss of micro-strip resonators. Close to 100% drop efficiency at the drop channel of 1557.5nm is the refractive index of the silicon-on-insulator strip (or rib) waveguide from which the ring is made

  20. Characteristics of ultra-compact polymer modulators based on silicon photonic crystal ring resonators

    E-Print Network [OSTI]

    Zhou, Weidong

    with diameter in microstrip resonators. Close to 100% drop efficiency at the drop channel of 1557.5 nm of the silicon-on-insulator strip (or rib) waveguide from which the ring is made. In the field of nanophotonics

  1. Feedback-controlled resonance and temporal response modulations in silicon microring resonators

    E-Print Network [OSTI]

    Poon, Andrew Wing On

    electrically-tunable silicon microring resonators with waveguide-coupled feedback for channel filter [9 layer on a 1-m-thick buried-oxide layer. The rib waveguide and the microring have a designed waveguide

  2. Fractal Iron Oxide Single-Crystal Dendritic Micro-Pines of Magnetic

    E-Print Network [OSTI]

    Wang, Zhong L.

    Fractal Iron Oxide Single-Crystal Dendritic Micro-Pines of Magnetic a-Fe2O3: Large-Scale Synthesis,2] Fractal structures are common in nature across all length scales, from self-assembled molecules. On the nanoscale, dendritic fractals are one type of hyperbranched structure which are generally formed

  3. Molecular dynamics simulations of the nano-scale room-temperature oxidation of aluminum single crystals

    E-Print Network [OSTI]

    Southern California, University of

    films that form on aluminum and aluminum alloys in air protect the surface against further oxidationMolecular dynamics simulations of the nano-scale room-temperature oxidation of aluminum single Abstract The oxidation of aluminum single crystals is studied using molecular dynamics (MD) simulations

  4. Optical properties of single-crystal sapphire fibers Rick K. Nubling and James A. Harrington

    E-Print Network [OSTI]

    Optical properties of single-crystal sapphire fibers Rick K. Nubling and James A. Harrington Single.4­0.3 dB m at 2.94 m. These fibers delivered 4.7 W at 10 Hz of Er:YAG laser power. © 1997 Optical Society of America Key words: Infrared fibers, sapphire fibers, Er:YAG lasers, optical properties. 1. Introduction

  5. Active Slip Band Separation and the Energetics of Slip in Single Crystals

    E-Print Network [OSTI]

    Active Slip Band Separation and the Energetics of Slip in Single Crystals Abstract This research supports recent efforts to provide an energetic ap- proach the formulation of new measures of the active slip-band separation and of the number of lattice cells

  6. Transport and superconducting properties of RNi2B2C (R=Y, Lu) single crystals 

    E-Print Network [OSTI]

    Rathnayaka, KDD; Bhatnagar, AK; Parasiris, A.; Naugle, Donald G.

    1997-01-01T23:59:59.000Z

    Ni2B2C single crystals. The analysis shows that these are moderately strong-coupling type-II superconductors (similar to the A-15 compounds) with a value of the electron-phonon coupling parameter lambda(0) approximately equal to 1.2 for YNi2B2C and 1...

  7. Transport and superconducting properties of RNi2B2C (R=Y, Lu) single crystals

    E-Print Network [OSTI]

    Rathnayaka, KDD; Bhatnagar, AK; Parasiris, A.; Naugle, Donald G.

    1997-01-01T23:59:59.000Z

    and perpendicular to the c axis and the superconducting parameters derived from it do not show any anisotropy for the YNi2B2C single-crystal samples in agreement with magnetization and torque magnetometry measurements, but a small anisotropy is observed for the Lu...

  8. A macroscopic model for magnetic shape-memory single crystals Anne-Laure Bessoud

    E-Print Network [OSTI]

    Stefanelli, Ulisse

    A macroscopic model for magnetic shape-memory single crystals Anne-Laure Bessoud Martin Kruz Souza-Auricchio model for shape memory alloys is here combined with classical micro recoverable strains can be induced by thermo-mechanical and/or magnetic treatment. As ordinary shape memory

  9. Single-Crystal Tungsten Oxide Nanosheets: Photochemical Water Oxidation in the Quantum Confinement Regime

    E-Print Network [OSTI]

    Osterloh, Frank

    Single-Crystal Tungsten Oxide Nanosheets: Photochemical Water Oxidation in the Quantum Confinement, catalysis, WO3, tungsten oxide, nanosheet, nanocrystal, quantum confinement, solar energy conversion INTRODUCTION Tungsten trioxide crystallizes in the ReO3 structure type and is an n-type semiconductor with a 2

  10. Model catalytic studies of single crystal, polycrystalline metal, and supported catalysts

    E-Print Network [OSTI]

    Yan, Zhen

    2009-05-15T23:59:59.000Z

    supported Pd/Al2 O3 catalysts, a Pd(100) single crystal, as well as polycrystalline metals of rhodium, palladium, and platinum. A hyperactive state, corresponding to an oxygen covered surface, was observed at high O 2/CO ratios at elevated pressures...

  11. Point defects and high temperature creep of NiO single crystals (*) J. Cabrera-Cano

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    durations between 1 h and 18 h have been used, depending on temperature creep test, with no influence on mL-119 Point defects and high temperature creep of NiO single crystals (*) J. Cabrera MPa-150 MPa. Oxygen partial pressures were varied between 10-5 atm. and air. The steady state creep

  12. Single crystal growth and heteroepitaxy of polyacene thin films on arbitrary substrates

    E-Print Network [OSTI]

    Headrick, Randall L.

    in a number of low-cost, large area electronic applications such as flat panel displays. Organic thin film as other substrates.6-12 Recently, significant progress has been made towards fabricating high quality is to prepare single crystal films on arbitrary substrates. Here we describe two significant advances towards

  13. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2005-11-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  14. Development of large-area monolithically integrated silicon-film photovoltaic modules

    SciTech Connect (OSTI)

    Rand, J.A.; Bacon, C.; Cotter, J.E.; Lampros, T.H.; Ingram, A.E.; Ruffins, T.R.; Hall, R.B.; Barnett, A.M. (AstroPower, Inc., Newark, DE (United States))

    1992-07-01T23:59:59.000Z

    This report describes work to develop Silicon-Film Product III into a low-cost, stable device for large-scale terrestrial power applications. The Product III structure is a thin (< 100 {mu}m) polycrystalline silicon layer on a non-conductive supporting ceramic substrate. The presence of the substrate allows cells to be isolated and in interconnected monolithically in various series/parallel configurations. The long-term goal for the product is efficiencies over 18% on areas greater than 1200 cm{sup 2}. The high efficiency is made possible through the benefits of using polycrystalline thin silicon incorporated into a light-trapping structure with a passivated back surface. Short-term goals focused on the development of large-area ceramics, a monolithic interconnection process, and 100 cm{sup 2} solar cells. Critical elements of the monolithically integrated device were developed, and an insulating ceramic substrate was developed and tested. A monolithic interconnection process was developed that will isolate and interconnect individual cells on the ceramic surface. Production-based, low-cost process steps were used, and the process was verified using free-standing silicon wafers to achieve an open-circuit voltage (V{sub oc}) of 8.25 V over a 17-element string. The overall efficiency of the silicon-film materials was limited to 6% by impurities. Improved processing and feedstock materials are under investigation.

  15. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Semiannual technical report, 1 January 1996--30 June 1996

    SciTech Connect (OSTI)

    Wohlgemuth, J. [Solarex Corp., Frederick, MD (United States)] [Solarex Corp., Frederick, MD (United States)

    1997-01-01T23:59:59.000Z

    Two specific objectives of Solarex`s program are to reduce the manufacturing cost for polycrystalline silicon photovoltaic modules to less than $1.20/watt and to increase the manufacturing capacity by a factor of three. This report highlights accomplishments during the period of January 1 through June 30, 1996. Accomplishments include: began the conversion of production casting stations to increase ingot size; operated the wire saw in a production mode with higher yields and lower costs than achieved on the ID saws; developed and qualified a new wire guide coating material that doubles the wire guide lifetime and produces significantly less scatter in wafer thickness; completed a third pilot run of the cost-effective Al paste back-surface-field (BSF) process, verifying a 5% increase in cell efficiency and demonstrating the ability to process and handle the BSF paste cells; completed environmental qualification of modules using cells produced by an all-print metallization process; optimized the design of the 15.2-cm by 15.2-cm polycrystalline silicon solar cells; demonstrated the application of a high-efficiency process in making 15.2-cm by 15.2-cm solar cells; demonstrated that cell efficiency increases with decreasing wafer thickness for the Al paste BSF cells; qualified a vendor-supplied Tedlar/ethylene vinyl acetate (EVA) laminate to replace the combination of separate sheets of EVA and Tedlar backsheet; demonstrated the operation of a prototype unit to trim/lead attach/test modules; and demonstrated the operation of a wafer pull-down system for cassetting wet wafers.

  16. Fergusonite-type CeNbO{sub 4+?}: Single crystal growth, symmetry revision and conductivity

    SciTech Connect (OSTI)

    Bayliss, Ryan D. [Department of Materials, Imperial College London, Prince Consort Road, London, SW7 2BP (United Kingdom); Pramana, Stevin S.; An, Tao; Wei, Fengxia; Kloc, Christian L. [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore); White, Andrew J.P. [Chemical Crystallography Laboratory, Department of Chemistry, Imperial College London, Exhibition Road, London, SW7 2AZ (United Kingdom); Skinner, Stephen J. [Department of Materials, Imperial College London, Prince Consort Road, London, SW7 2BP (United Kingdom); White, Timothy J. [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore); Baikie, Tom, E-mail: tbaikie@ntu.edu.sg [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore)

    2013-08-15T23:59:59.000Z

    Large fergusonite-type (ABO{sub 4}, A=Ce, B=Nb) oxide crystals, a prototype electrolyte composition for solid oxide fuel cells (SOFC), were prepared for the first time in a floating zone mirror furnace under air or argon atmospheres. While CeNbO{sub 4} grown in air contained CeNbO{sub 4.08} as a minor impurity that compromised structural analysis, the argon atmosphere yielded a single phase crystal of monoclinic CeNbO{sub 4}, as confirmed by selected area electron diffraction, powder and single crystal X-ray diffraction. The structure was determined in the standard space group setting C12/c1 (No. 15), rather than the commonly adopted I12/a1. AC impedance spectroscopy conducted under argon found that stoichiometric CeNbO{sub 4} single crystals showed lower conductivity compared to CeNbO{sub 4+?} confirming interstitial oxygen can penetrate through fergusonite and is responsible for the higher conductivity associated with these oxides. - Graphical abstract: Large fergusonite-type CeNbO{sub 4} crystals were prepared for the first time in a floating zone mirror furnace. Crystal growth in an argon atmosphere yielded a single phase monoclinic CeNbO4, as confirmed by selected area electron diffraction, powder and single crystal X-ray diffraction. The structure was determined in the standard space group setting C12/c1 (No. 15), rather than the commonly adopted I12/a1. AC impedance spectroscopy found CeNbO{sub 4} single crystals showed lower conductivity compared to CeNbO{sub 4+?} confirming interstitial oxygen can penetrate through fergusonite and is responsible for the higher conductivity associated with these oxides. Highlights: • Preparation of single crystals of CeNbO{sub 4} using a floating zone mirror furnace. • Correction to the crystal symmetry of the monoclinic form of CeNbO{sub 4}. • Report the conductivity of a single crystal of CeNbO{sub 4}.

  17. Development and Evaluation of Test Stations for the Quality Assurance of the Silicon Micro-Strip Detector Modules for the CMS Experiment

    E-Print Network [OSTI]

    Pöttgens, Michael

    2007-01-01T23:59:59.000Z

    CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m2, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control o...

  18. Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo bandwidth have been demonstrated [4]. 2. Quantum well design Ge is an indirect band gap material, but it has. In order to have good quantum confinement, SiGe barriers are used since Si and Ge have a very high direct

  19. Lattice distortion in single crystal rare-earth arsenide/GaAs nanocomposites

    SciTech Connect (OSTI)

    Young, A. J. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Schultz, B. D. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States); Palmstrøm, C. J., E-mail: cpalmstrom@ece.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

    2014-02-17T23:59:59.000Z

    Epitaxial single crystal nanocomposites comprised of rare-earth arsenide nanoparticles embedded in GaAs (001) layers produce a larger change in lattice parameter than expected from the lattice parameters of relaxed films. Despite similar cubic structures and lattice parameters, elongation of the interfacial bond length between the two materials induces additional strain causing an expansion in the nanocomposite lattice. The interface bond length is material dependent with an average atomic layer spacing at the ErAs:GaAs interface of 1.9?Å while the spacing at the ScAs:GaAs interface is only 1.4?Å. Implications for lattice matching various single crystal epitaxial nanostructures in semiconductors are discussed.

  20. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2006-08-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  1. Polycrystalline silicon resistor trimming by laser annealing 

    E-Print Network [OSTI]

    Crowley, Robert Terrence

    1989-01-01T23:59:59.000Z

    . ~ The single crystal band structure of silicon is applicable inside each grain. ~ Carrier trapping sites exist at the grain boundary with an area density of qq cm . These traps are filled with a density of n, cm ~ The traps are monovalent and located..., and (b) Kelvin resistors. luminum Top oxide Polysilicon Initial oxide ubstrate 26 Fig. 7. Cross sectional view of test cell. an oxidized silicon wafer. The polysilicon was oxidized for passivation, and contact windows were etched for the metal...

  2. Short communication Single crystal X-ray characterization of the incommensurate mod-

    E-Print Network [OSTI]

    Boyer, Edmond

    in the high Tc superconductor Bi2Sr2CaCu2O8. P.-A. Albouy(1) , R. Moret(1) , M. Potel(2) ,P.Gougeon(2), J, Classification Physics Abstracts 61.50 - 74.70V Since the discovery of the bismuth based high Tc superconductors-cooled to room temperature. Single crystals separated from the melt were found to be superconductors with zero

  3. Enhancement of Thermoelectric Properties by Modulation-Doping in Silicon Germanium Alloy Nanocomposites

    E-Print Network [OSTI]

    Yu, Bo

    Modulation-doping was theoretically proposed and experimentally proved to be effective in increasing the power factor of nanocomposites (Si[subscript 80]Ge[subscript 20])[subscript 70](Si[subscript 100]B[subscript 5])[subscript ...

  4. Production of ATLAS silicon detector modules Report from the Scandinavian Cluster

    E-Print Network [OSTI]

    Johansen, L G; Solberg, A O; Stugu, B; Oye, O K; Dorholt, O; Huse, T; Stapnes, S; Bingefors, N; Brenner, R; Ehn, S; Ekelöf, T J C; Eklund, L; Lindquist, L E

    2006-01-01T23:59:59.000Z

    This document describes the assembly and quality assurance of Semi Conductor Tracker (SCT) barrel modules performed by the Scandinavian Cluster. The project has been carried out as a joint effort between University of Bergen, University of Oslo and Uppsala University.

  5. Considerations for a Standardized Test for Potential-Induced Degradation of Crystalline Silicon PV Modules (Presentation)

    SciTech Connect (OSTI)

    Hacke, P.

    2012-03-01T23:59:59.000Z

    Over the past decade, there have been observations of module degradation and power loss because of the stress that system voltage bias exerts. This results in part from qualification tests and standards note adequately evaluating for the durability of modules to the long-term effects of high voltage bias that they experience in fielded arrays. This talk deals with factors for consideration, progress, and information still needed for a standardized test for degradation due to system voltage stress.

  6. Development of large Grain/Single Crystal Niobium Cavity Technology at Jefferson Lab

    SciTech Connect (OSTI)

    Peter Kneisel; J. Sekutowicz; T. Carneiro; G. Ciovati

    2006-10-31T23:59:59.000Z

    Approximately two years ago we started to develop high performance niobium accelerating cavities based on large grain or single crystal high purity niobium. We have fabricated and tested 15 single cell cavities of various shapes and frequencies between 1300 MHz and 2300 MHz using material from a total of 9 different very large grain niobium ingots from four niobium suppliers. The materials differed not only in grain sizes, but also in RRR ? value and in the amount of Ta contained in the material. In one ingot supplied by CBMM the central grain exceeded 7 inches in diameter and this was used to fabricate two 2.2 GHz cavities. A single crystal 1300 MHz mono-cell cavity was also produced at DESY by rolling out a single crystal to the size required for this cavity. It was sent to Jlab for surface treatment and testing. In addition, we have fabricated three 7-cell cavities: two of the Jlab high gradient (HG) shape and one of the ILC Low Loss shape. Two 9-cell TESLA shape cavities are presently in fabrication at Jlab and are close to completion.

  7. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    DOE Patents [OSTI]

    Vertes, Akos (Reston, VA); Walker, Bennett N. (Washington, DC)

    2012-02-07T23:59:59.000Z

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  8. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    DOE Patents [OSTI]

    Vertes, Akos; Walker, Bennett N.

    2013-09-10T23:59:59.000Z

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  9. Single crystal neutron diffraction study of the magnetic structure of TmNi{sub 2}B{sub 2}C

    SciTech Connect (OSTI)

    Sternlieb, B.; Shapiro, S. [Brookhaven National Lab., Upton, NY (United States); Stassis, C.; Goldman, A.I.; Canfield, P. [Iowa State Univ., Ames, IA (United States)

    1997-02-01T23:59:59.000Z

    Neutron diffraction techniques have been used to study the magnetic structure of single crystals of the magnetic superconductor (T{sub c} {congruent} 11K) TmNi{sub 2}B{sub 2}C. We find that below approximately 1.5K the magnetic moments order in an incommensurate spin wave with propagation vector q{sub m} = q{sub m} (a* +b*) (or q{sub m} = q{sub m} (a* + b*)) with q{sub m} = 0.094 {+-} 0.001. The spin wave is transverse with the moments aligned along the c-axis, and the observation of relatively intense higher order harmonics shows that the modulation is not purely sinusoidal but considerably squared. This incommensurate magnetic structure, which coexists with superconductivity below T{sub N} {congruent} 1.5K, is quite different from those observed in the magnetic superconductors HoNi{sub 2}B{sub 2}C and ErNi{sub 2}B{sub 2}C. The origin of diffraction peaks observed in scans parallel to a* is briefly discussed.

  10. Irradiation damage of single crystal, coarse-grained, and nanograined copper under helium bombardment at 450 °C

    E-Print Network [OSTI]

    Han, Weizhong

    The irradiation damage behaviors of single crystal (SC), coarse-grained (CG), and nanograined (NG) copper (Cu) films were investigated under Helium (He) ion implantation at 450 °C with different ion fluences. In irradiated ...

  11. Millimeter size single crystals of superconducting YBa[sub 2]Cu[sub 3]O[sub x

    DOE Patents [OSTI]

    Damento, M.A.; Gschneidner, K.A. Jr.

    1989-04-25T23:59:59.000Z

    A method of growing large, up to 1 mm size single crystals of superconducting YBa[sub 2]Cu[sub 3]O[sub x], wherein x equals from 6.5 to 7.2 is disclosed.

  12. Electrical and mechanical studies of high purity aluminum single crystals at 4.2 K under cyclic strain 

    E-Print Network [OSTI]

    Zou, Hong

    1995-01-01T23:59:59.000Z

    The objective of this research is to investigate the effects of orientation on strain hardening and resistivity degradation in high purity aluminum single crystals resulting from uniaxial cyclic strain at 4.2 K. Aluminum crystals with various...

  13. Electrical and mechanical studies of high purity aluminum single crystals at 4.2 K under cyclic strain

    E-Print Network [OSTI]

    Zou, Hong

    1995-01-01T23:59:59.000Z

    The objective of this research is to investigate the effects of orientation on strain hardening and resistivity degradation in high purity aluminum single crystals resulting from uniaxial cyclic strain at 4.2 K. Aluminum crystals with various...

  14. Polarisation independent phase modulation using a blue phase liquid crystal over silicon device

    E-Print Network [OSTI]

    Hyman, Rachel M.; Lorenz, Alexander; Morris, Stephen M.; Wilkinson, Timothy D.

    2014-10-10T23:59:59.000Z

    , Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK 2Department of Engineering Science University of Oxford, Parks Road, Oxford, OX1 3PJ, UK *Corresponding author: rmh61@cam.ac.uk Liquid crystal over silicon... together using 6 ?m spacer bead doped glue. The cell thickness was then measured using the Fabry-Perot interference technique with a spectrometer connected to the microscope (Ocean Optics USB 2000). The cell gap thickness was measured to be 6.4 ± 0.1 ?m...

  15. Energy harvesting in silicon optical modulators Sasan Fathpour and Bahram Jalali

    E-Print Network [OSTI]

    Jalali. Bahram

    modulation through electrical control of losses caused by two photon absorption. It further exploits Conference (ISSCC 2006) Digest of Technical Papers (Institute of Electrical and Electronics Engineers, New Circuits and Systems Laboratory Electrical Engineering Department University of California, Los Angeles, CA

  16. Lithium ion diffusion in Li ?-alumina single crystals measured by pulsed field gradient NMR spectroscopy

    SciTech Connect (OSTI)

    Chowdhury, Mohammed Tareque, E-mail: mtareque@mail.tagen.tohoku.ac.jp; Takekawa, Reiji; Iwai, Yoshiki; Kuwata, Naoaki; Kawamura, Junichi [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1, Katahira, Aoba-ku Sendai 980-8577 (Japan)] [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1, Katahira, Aoba-ku Sendai 980-8577 (Japan)

    2014-03-28T23:59:59.000Z

    The lithium ion diffusion coefficient of a 93% Li ?-alumina single crystal was measured for the first time using pulsed field gradient (PFG) NMR spectroscopy with two different crystal orientations. The diffusion coefficient was found to be 1.2 × 10{sup ?11} m{sup 2}/s in the direction perpendicular to the c axis at room temperature. The Li ion diffusion coefficient along the c axis direction was found to be very small (6.4 × 10{sup ?13} m{sup 2}/s at 333 K), which suggests that the macroscopic diffusion of the Li ion in the ?-alumina crystal is mainly two-dimensional. The diffusion coefficient for the same sample was also estimated using NMR line narrowing data and impedance measurements. The impedance data show reasonable agreement with PFG-NMR data, while the line narrowing measurements provided a lower value for the diffusion coefficient. Line narrowing measurements also provided a relatively low value for the activation energy and pre-exponential factor. The temperature dependent diffusion coefficient was obtained in the temperature range 297–333 K by PFG-NMR, from which the activation energy for diffusion of the Li ion was estimated. The activation energy obtained by PFG-NMR was smaller than that obtained by impedance measurements, which suggests that thermally activated defect formation energy exists for 93% Li ?-alumina single crystals. The diffusion time dependence of the diffusion coefficient was observed for the Li ion in the 93% Li ?-alumina single crystal by means of PFG-NMR experiments. Motion of Li ion in fractal dimension might be a possible explanation for the observed diffusion time dependence of the diffusion coefficient in the 93% Li ?–alumina system.

  17. Surface Structure Spread Single Crystals ((SC)-C-4): Preparation and characterization

    SciTech Connect (OSTI)

    de Alwis, A.; Holsclaw, B.; Pushkarev, V. V.; Reinicker, A.; Lawton, T. J.; Blecher, M. E.; Sykes, E. C. H.; Gellman, A. J.

    2013-02-01T23:59:59.000Z

    A set of six spherically curved Cu single crystals referred to as Surface Structure Spread Single Crystals (S{sup 4}Cs) has been prepared in such a way that their exposed surfaces collectively span all possible crystallographic surface orientations that can be cleaved from the face centered cubic Cu lattice. The method for preparing these S{sup 4}Cs and for finding the high symmetry pole point are described. Optical profilometry has been used to determine the true shapes of the S{sup 4}Cs and show that over the majority of the surface, the shape is extremely close to that of a perfect sphere. The local orientations of the surfaces lie within ±1{degree} of the orientation expected on the basis of the spherical shape; their orientation is as good as that of many commercially prepared single crystals. STM imaging has been used to characterize the atomic level structure of the Cu(111)±11{degree}-S{sup 4}C. This has shown that the average step densities and the average step orientations match those expected based on the spherical shape. In other words, although there is some distribution of step-step spacing and step orientations, there is no evidence of large scale reconstruction or faceting. The Cu S{sup 4}Cs have local structures based on the ideal termination of the face centered cubic Cu lattice in the direction of termination. The set of Cu S{sup 4}Cs will serve as the basis for high throughput investigations of structure sensitive surface chemistry on Cu.

  18. Calculations of single crystal elastic constants for yttria partially stabilised zirconia from powder diffraction data

    SciTech Connect (OSTI)

    Lunt, A. J. G., E-mail: alexander.lunt@eng.ox.ac.uk; Xie, M. Y.; Baimpas, N.; Korsunsky, A. M. [Department of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ (United Kingdom); Zhang, S. Y.; Kabra, S.; Kelleher, J. [ISIS Neutron and Muon Source, Rutherford Appleton Laboratory, Harwell, Oxford OX11 0QX (United Kingdom); Neo, T. K. [Specialist Dental Group, Mount Elizabeth Orchard, 3 Mount Elizabeth, #08-03/08-08/08-10, Singapore 228510 (Singapore)

    2014-08-07T23:59:59.000Z

    Yttria Stabilised Zirconia (YSZ) is a tough, phase-transforming ceramic that finds use in a wide range of commercial applications from dental prostheses to thermal barrier coatings. Micromechanical modelling of phase transformation can deliver reliable predictions in terms of the influence of temperature and stress. However, models must rely on the accurate knowledge of single crystal elastic stiffness constants. Some techniques for elastic stiffness determination are well-established. The most popular of these involve exploiting frequency shifts and phase velocities of acoustic waves. However, the application of these techniques to YSZ can be problematic due to the micro-twinning observed in larger crystals. Here, we propose an alternative approach based on selective elastic strain sampling (e.g., by diffraction) of grain ensembles sharing certain orientation, and the prediction of the same quantities by polycrystalline modelling, for example, the Reuss or Voigt average. The inverse problem arises consisting of adjusting the single crystal stiffness matrix to match the polycrystal predictions to observations. In the present model-matching study, we sought to determine the single crystal stiffness matrix of tetragonal YSZ using the results of time-of-flight neutron diffraction obtained from an in situ compression experiment and Finite Element modelling of the deformation of polycrystalline tetragonal YSZ. The best match between the model predictions and observations was obtained for the optimized stiffness values of C11?=?451, C33?=?302, C44?=?39, C66?=?82, C12?=?240, and C13?=?50 (units: GPa). Considering the significant amount of scatter in the published literature data, our result appears reasonably consistent.

  19. Advances in the growth of alkaline-earth halide single crystals for scintillator detectors

    SciTech Connect (OSTI)

    Boatner, Lynn A [ORNL; Ramey, Joanne Oxendine [ORNL; Kolopus, James A [ORNL; Neal, John S [ORNL; Cherepy, Nerine [Lawrence Livermore National Laboratory (LLNL); Payne, Stephen A. [Lawrence Livermore National Laboratory (LLNL); Beck, P [Lawrence Livermore National Laboratory (LLNL); Burger, Arnold [Fisk University, Nashville; Rowe, E [Fisk University, Nashville; Bhattacharya, P. [Fisk University, Nashville

    2014-01-01T23:59:59.000Z

    Alkaline-earth scintillators such as strontium iodide and other alkaline-earth halides activated with divalent europium represent some of the most efficient and highest energy resolution scintillators for use as gamma-ray detectors in a wide range of applications. These applications include the areas of nuclear nonproliferation, homeland security, the detection of undeclared nuclear material, nuclear physics and materials science, medical diagnostics, space physics, high energy physics, and radiation monitoring systems for first responders, police, and fire/rescue personnel. Recent advances in the growth of large single crystals of these scintillator materials hold the promise of higher crystal yields and significantly lower detector production costs. In the present work, we describe new processing protocols that, when combined with our molten salt filtration methods, have led to advances in achieving a significant reduction of cracking effects during the growth of single crystals of SrI2:Eu2+. In particular, we have found that extended pumping on the molten crystal-growth charge under vacuum for time periods extending up to 48 hours is generally beneficial in compensating for variations in the alkaline-earth halide purity and stoichiometry of the materials as initially supplied by commercial sources. These melt-pumping and processing techniques are now being applied to the purification of CaI2:Eu2+ and some mixed-anion europium-doped alkaline-earth halides prior to single-crystal growth by means of the vertical Bridgman technique. The results of initial studies of the effects of aliovalent doping of SrI2:Eu2+ on the scintillation characteristics of this material are also described.

  20. In-Situ Measurement of Crystalline Silicon Modules Undergoing Potential-Induced Degradation in Damp Heat Stress Testing for Estimation of Low-Light Power Performance

    SciTech Connect (OSTI)

    Hacke, P.; Terwilliger, K.; Kurtz, S.

    2013-08-01T23:59:59.000Z

    The extent of potential-induced degradation of crystalline silicon modules in an environmental chamber is estimated using in-situ dark I-V measurements and applying superposition analysis. The dark I-V curves are shown to correctly give the module power performance at 200, 600 and 1,000 W/m2 irradiance conditions, as verified with a solar simulator. The onset of degradation measured in low light in relation to that under one sun irradiance can be clearly seen in the module design examined; the time to 5% relative degradation measured in low light (200 W/m2) was 28% less than that of full sun (1,000 W/m2 irradiance). The power of modules undergoing potential-induced degradation can therefore be characterized in the chamber, facilitating statistical analyses and lifetime forecasting.

  1. Integration of neutron time-of-flight single-crystal Bragg peaks in reciprocal space

    SciTech Connect (OSTI)

    Schultz, Arthur J [ORNL] [ORNL; Joergensen, Mads [ORNL] [ORNL; Wang, Xiaoping [ORNL] [ORNL; Mikkelson, Ruth L [ORNL] [ORNL; Mikkelson, Dennis J [ORNL] [ORNL; Lynch, Vickie E [ORNL] [ORNL; Peterson, Peter F [ORNL] [ORNL; Green, Mark L [ORNL] [ORNL; Hoffmann, Christina [ORNL] [ORNL

    2014-01-01T23:59:59.000Z

    The intensity of single crystal Bragg peaks obtained by mapping neutron time-of-flight event data into reciprocal space and integrating in various ways are compared. These include spherical integration with a fixed radius, ellipsoid fitting and integrating of the peak intensity and one-dimensional peak profile fitting. In comparison to intensities obtained by integrating in real detector histogram space, the data integrated in reciprocal space results in better agreement factors and more accurate atomic parameters. Furthermore, structure refinement using integrated intensities from one-dimensional profile fitting is demonstrated to be more accurate than simple peak-minus-background integration.

  2. Resistivity measurements of iodine single crystals by an A.C. technique

    E-Print Network [OSTI]

    Intararithi, Thanom

    1965-01-01T23:59:59.000Z

    . measure- ment and could be responsible for the disagreement. Another object is to de- termine any frequency dependence of the resistivity of iodine single crystals which might give information concerning the reasons for the increase in acti- vation... the assembly used in the resublimation. TO DIFFUSION FUMP S, ;U I. IQUID NITRO&EN C 33 A O'LASS WOOJ- F EACrE NT-&'RADE IODINE The reagent-grade iodine is initially in tube A. A trap T filled with liquid nitrogen prevents the contamination of the pump...

  3. Electronic band structure imaging of three layer twisted graphene on single crystal Cu(111)

    SciTech Connect (OSTI)

    Marquez Velasco, J. [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece) [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Department of Physics, National Technical University of Athens, Athens (Greece); Kelaidis, N.; Xenogiannopoulou, E.; Tsoutsou, D.; Tsipas, P.; Speliotis, Th.; Pilatos, G.; Likodimos, V.; Falaras, P.; Dimoulas, A., E-mail: dimoulas@ims.demokritos.gr [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Raptis, Y. S. [Department of Physics, National Technical University of Athens, Athens (Greece)] [Department of Physics, National Technical University of Athens, Athens (Greece)

    2013-11-18T23:59:59.000Z

    Few layer graphene (FLG) is grown on single crystal Cu(111) by Chemical Vapor Deposition, and the electronic valence band structure is imaged by Angle-Resolved Photo-Emission Spectroscopy. It is found that graphene essentially grows polycrystalline. Three nearly ideal Dirac cones are observed along the Cu ?{sup ¯}K{sup ¯} direction in k-space, attributed to the presence of ?4° twisted three layer graphene with negligible interlayer coupling. The number of layers and the stacking order are compatible with Raman data analysis demonstrating the complementarity of the two techniques for a more accurate characterization of FLG.

  4. The growth and characterization of LiGd?(Mo0?)? single crystals

    E-Print Network [OSTI]

    Reimund, James Allyn

    1981-01-01T23:59:59.000Z

    ' C/second 37 Pyroelectric Current vs. Temperature dT/dt = 30' C/second 180' Domains (Gd (MoO ) ) 37 39 INTRODUCTION This thesis discusses the growth and some single crystalline properties of lithium-gadolinium-molybdate of the type LiGd (Mo...O ) 3 45' This compound is one of the three thus far discovered compounds of the lithium ? gadolinium-molybdate (LGMO) system. In general, this system can be expressed as Li2Mo04. XGd2(Mo04)3, where LiGd3(MoO, )5 4 5 single crystals synthesize when X...

  5. Shape of isolated domains in lithium tantalate single crystals at elevated temperatures

    SciTech Connect (OSTI)

    Shur, V. Ya., E-mail: vladimir.shur@usu.ru; Akhmatkhanov, A. R.; Baturin, I. S. [Ferroelectric Laboratory, Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation) [Ferroelectric Laboratory, Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Labfer Ltd., 620014 Ekaterinburg (Russian Federation); Chezganov, D. S.; Lobov, A. I.; Smirnov, M. M. [Ferroelectric Laboratory, Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)] [Ferroelectric Laboratory, Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2013-12-09T23:59:59.000Z

    The shape of isolated domains has been investigated in congruent lithium tantalate (CLT) single crystals at elevated temperatures and analyzed in terms of kinetic approach. The obtained temperature dependence of the growing domain shape in CLT including circular shape at temperatures above 190?°C has been attributed to increase of relative input of isotropic ionic conductivity. The observed nonstop wall motion and independent domain growth after merging in CLT as opposed to stoichiometric lithium tantalate have been attributed to difference in wall orientation. The computer simulation has confirmed applicability of the kinetic approach to the domain shape explanation.

  6. Giant increase in critical current density of KxFe2-ySe? single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lei, Hechang; Petrovic, C.

    2011-12-01T23:59:59.000Z

    The critical current density Jabc of KxFe2-ySe? single crystals can be enhanced by more than one order of magnitude, up to ~2.1×10? A/cm² by the post annealing and quenching technique. A scaling analysis reveals the universal behavior of the normalized pinning force as a function of the reduced field for all temperatures, indicating the presence of a single vortex pinning mechanism. The main pinning sources are three-dimensional (3D) point-like normal cores. The dominant vortex interaction with pinning centers is via spatial variations in critical temperature Tc (“?Tc pinning”).

  7. Chaotic magnetization dynamics in single-crystal thin-film structures

    SciTech Connect (OSTI)

    Shutyi, A. M., E-mail: shuty@mail.ru; Sementsov, D. I. [Ulyanovsk State University (Russian Federation)

    2009-01-15T23:59:59.000Z

    The nonlinear dynamics of homogeneously precessing magnetization in perpendicularly magnetized single-crystal films has been investigated in a wide range of ac field frequencies on the basis of a numerical solution to the Landau-Lifshitz equation and construction of the spectrum of Lyapunov exponents. The conditions for implementing and specific features of chaotic dynamic modes are revealed for films of three basic crystallographic orientations: (100), (110), and (111). It is shown that chaotic precession modes can be controlled using external magnetic fields. Time analogs of the Poincare section of chaotic mode trajectories are considered.

  8. Modelling off Hugoniot Loading Using Ramp Compression in Single Crystal Copper

    SciTech Connect (OSTI)

    Hawreliak, J; Remington, B A; Lorenzana, H; Bringa, E; Wark, J

    2010-11-29T23:59:59.000Z

    The application of a ramp load to a sample is a method by which the thermodynamic variables of the high pressure state can be controlled. The faster the loading rate, the higher the entropy and higher the temperature. This paper describes moleculer dynamics (MD) simulations with 25 million atoms which investigate ramp loading of single crystal copper. The simulations followed the propagation of a 300ps ramp load to 3Mbar along the [100] direction copper. The simulations were long enough to allow the wave front to steepen into a shock, at which point the simulated copper sample shock melted.

  9. Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon

    E-Print Network [OSTI]

    Wei, Qiuming

    Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon H. Wang, A 2001) We investigated mechanical properties of TiN as a function of microstructure varying from nanocrystalline to single crystal TiN films deposited on (100) silicon substrates. By varying the substrate

  10. Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes

    SciTech Connect (OSTI)

    Yuan, H.-C.; Kelly, M. M.; Savage, D. E.; Lagally, M. G.; Celler, G. K.; Zhenqiang, M.

    2008-03-01T23:59:59.000Z

    Demonstration of high-performance MOS thin-film transistors (TFTs) on elastically strain-sharing single-crystal Si/SiGe/Si nanomembranes (SiNMs) that are transferred to foreign substrates is reported. The transferable SiNMs are realized by first growing pseudomorphic SiGe and Si layers on silicon-on-insulator (SOI) substrates, and then, selectively removing the buried oxide (BOX) layer from the SOI. Before the release, only the SiGe layer is compressively strained. Upon release, part of the compressive strain in the SiGe layer is transferred to the thin Si layers, and the Si layers, thus, become tensile strained. Both the initial compressive strain state in the SiGe layer and the final strain sharing state between the SiGe and the Si layers are verified with X-ray diffraction measurements. The TFTs are fabricated employing the conventional high-temperature MOS process on the strain-shared SiNMs that are transferred to an oxidized Si substrate. The transferred strained-sharing SiNMs show outstanding thermal stability and can withstand the high-temperature TFT process on the new host substrate. The strained-channel TFTs fabricated on the new host substrate show high current drive capability and an average electron effective mobility of 270 cm{sup 2}/V ldr s. The results suggest that transferable and thermally stable single-crystal elastically strain- sharing SiNMs can serve as excellent active material for high-speed device application with a simple and scalable transfer method. The demonstration of MOS TFTs on the transferable nanomembranes may create the opportunity for future high-speed Si CMOS heterogeneous integration on any substrate.

  11. Pair distribution function-derived mechanism of a single-crystal to disordered to single-crystal transformation in a hemilabile metal-organic framework

    SciTech Connect (OSTI)

    Allan, P. K.; Chapman, K. W.; Chupas, P. J.; Hriljac, J. A.; Renouf, C. L.; Lucas, T. C. A.; Morris, R. E. (X-Ray Science Division); (Univ. of St. Andrews); (Univ. of Birmingham)

    2012-01-01T23:59:59.000Z

    Flexible metal-organic frameworks (MOFs) are materials of great current interest. A small class of MOFs show flexibility driven by reversible bonding rearrangements that lead directly to unusual properties. Cu-SIP-3 is a MOF based on the 5-sulfoisophthalate ligand, where the strong copper-carboxylate bonds ensure that the three-dimensional integrity of the structure is retained while allowing bonding changes to occur at the more weakly bonding sulfonate group leading to unusual properties such as the ultra-selective adsorption of only certain gases. While the integrity of the framework remains intact during bonding changes, crystalline order is not retained at all times during the transformations. X-Ray diffraction reveals that highly crystalline single crystals lose order during the transformation before regaining crystallinity once it is complete. Here we show how X-ray pair distribution function analysis can be used to reveal the mechanism of the transformations in Cu-SIP-3, identifying the sequence of atomic displacements that occur in the disordered phase. A similar approach reveals the underlying mechanism of Cu-SIP-3's ultra-selective gas adsorption.

  12. Creep property and microstructure evolution of a nickel-base single crystal superalloy in [011] orientation

    SciTech Connect (OSTI)

    Han, G.M., E-mail: gmhan@imr.ac.cn; Yu, J.J.; Hu, Z.Q.; Sun, X.F.

    2013-12-15T23:59:59.000Z

    The creep property and microstructure evolution of a single crystal superalloy with [011] orientation were investigated at the temperatures of 700 °C, 900 °C and 1040 °C. It is shown that there exist stages of primary, steady-state, and tertiary creep under the lower temperature 700 °C. As the temperature increases to high temperatures of 900 °C and 1040 °C, steady-state creep stage is reduced or disappears and the shape of creep curves is dominated by an extensive tertiary stage. The minimum creep strain rate exhibits power law dependence on the applied stress; the stress exponents at 700 °C, 900 °C and 1040 °C are 28, 13 and 6.5, respectively. Microstructure observation shows that the morphologies of ?? phase almost keep original shape at the lower temperature 700 °C and high applied stress. With the increasing creep temperature, ?? precipitates tend to link together and form lamellar structure at an angle of 45° inclined to the applied stress. Transmission electron microscopy (TEM) investigations reveal that multiple < 110 > (111) slip systems gliding in the matrix channels and shearing ?? precipitates by stacking faults or bending dislocation pairs are the main deformation mechanism at the lower temperature of 700 °C. At the high temperatures of 900 °C and 1040 °C, dislocation networks are formed at ?/?? interfaces and the ?? rafts are sheared by dislocation pairs. - Highlights: • Creep properties of < 011 >-oriented single crystal superalloys were investigated. • ?? phases become rafting at an angle of 45° inclined to the applied stress. • Creep deformation mechanisms depend on temperature and stress.

  13. Cooperative Island Growth of Large Area Single-Crystal Graphene by Chemical Vapor Deposition on Cu

    SciTech Connect (OSTI)

    Regmi, Murari [Oak Ridge National Laboratory (ORNL); Rouleau, Christopher [Oak Ridge National Laboratory (ORNL); Puretzky, Alexander A [ORNL; Ivanov, Ilia N [ORNL; Geohegan, David B [ORNL; Chen, Jihua [ORNL; Eastman, Jeffrey [Argonne National Laboratory (ANL); Eres, Gyula [ORNL

    2014-01-01T23:59:59.000Z

    We describe a two-step approach for suppressing nucleation of graphene on Cu using chemical vapor deposition. In the first step, as received Cu foils are oxidized in air at temperatures up to 500 C to remove surface impurities and to induce the regrowth of Cu grains during subsequent annealing in H2 flow at 1040 C prior to graphene growth. In the second step, transient reactant cooling is performed by using a brief Ar pulse at the onset of growth to induce collisional deactivation of the carbon growth species. The combination of these two steps results in a three orders of magnitude reduction in the graphene nucleation density, enabling the growth of millimeter-size single crystal graphene grains. A kinetic model shows that suppressing nucleation promotes a cooperative island growth mode that favors the formation of large area single crystal graphene, and it is accompanied by a roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random nucleation growth.

  14. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Rainer Wallny

    2012-10-15T23:59:59.000Z

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2010, and the LHC upgrades expected in 2015, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed and operational in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  15. Synthesis, growth, structure determination and optical properties of chalcone derivative single crystal

    SciTech Connect (OSTI)

    Karthi, S., E-mail: girijaeaswaradas@gmail.com; Girija, E. K., E-mail: girijaeaswaradas@gmail.com [Department of Physics, Periyar University, Salem - 636011 (India)

    2014-04-24T23:59:59.000Z

    Acquiring large nonlinear optical (NLO) efficient organic material is essential for the development of optoelectronics and photonic devices. Chalcone is the donor - ? - acceptor - ? - donor (D-?-A-?-D) type conjugated molecule with appreciable hyperpolarizability of potential interest in NLO applications. The addition of vinyl and electron donor groups in the chalcone molecule may enhance the second harmonic generation (SHG) efficiency. Here we report the synthesis, crystal growth and characterization of a chalcone derivative 1-(4-methylphenyl)-5-(4-methoxyphenyl)-penta-2,4-dien-1-one (MPMPP). The MPMPP crystal was grown by slow evaporation solution growth technique from acetone. The grown crystal structure was studied by single crystal X-ray diffraction. The SHG efficiency of the grown crystal was determined by Kurtz and Perry method.

  16. Deformation of Diopside Single Crystal at Mantle Pressure 2 TEM Characterization of Deformation Microstructures

    SciTech Connect (OSTI)

    E Amiguet; P Cordier; P Raterron

    2011-12-31T23:59:59.000Z

    The dislocation microstructures of diopside single crystals deformed at high-pressure (4 {<=} P {<=} 9 GPa), high-temperature (1100{sup o} {<=} T {<=} 1400 {sup o}C) using a Deformation-DIA high-pressure apparatus (D-DIA) have been characterized by transmission electron microscopy using weak-beam dark-field (WBDF), precession electron diffraction (PED), large-angle convergent-beam electron diffraction (LACBED) and the thickness-fringe method. Dislocation glide is the dominant deformation mechanism under these conditions. The 1/2<110>{l_brace}110{r_brace} glide is controlled by lattice friction on the edge segments and shows extensive cross-slip. The [001] glide occurs mostly on {l_brace}110{r_brace}; no evidence for [001](010) glide has been found. The [100] dislocations bear a strong lattice friction probably due to complex (out of glide) core structures.

  17. Infrared phonon modes in multiferroic single-crystal FeTe2O5Br

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Miller, K. H.; Xu, X. S.; Berger, H.; Craciun, V.; Xi, Xiaoxiang; Martin, C.; Carr, G. L.; Tanner, D. B.

    2013-06-01T23:59:59.000Z

    Reflection and transmission as a function of temperature (7–300 K and 5–300 K respectively) have been measured on single crystals of the multiferroic compound FeTe2O5Br utilizing light spanning from the far infrared to the visible. The complex dielectric function and other optical properties were obtained via Kramers-Kronig analysis and by fits to a Drude-Lortentz model. Analysis of the anisotropic excitation spectra via Drude-Lorentz fitting and lattice dynamical calculations have led to the observation of 43 of the 53 modes predicted along the b axis of the monoclinic cell. The phonon response parallel to the a and c axes are also presented. Assignments to groups (clusters) of phonons have been made and trends within them are discussed in light of our calculated displacement patterns.

  18. Homoepitaxial Growth of Single Crystal Diamond Membranes for Quantum Information Processing

    E-Print Network [OSTI]

    Igor Aharonovich; Jonathan C. Lee; Andrew P. Magyar; Bob B. Buckley; Christopher G. Yale; David D. Awschalom; Evelyn L. Hu

    2012-01-18T23:59:59.000Z

    Fabrication of devices designed to fully harness the unique properties of quantum mechanics through their coupling to quantum bits (qubits) is a prominent goal in the field of quantum information processing (QIP). Among various qubit candidates, nitrogen vacancy (NV) centers in diamond have recently emerged as an outstanding platform for room temperature QIP. However, formidable challenges still remain in processing diamond and in the fabrication of thin diamond membranes, which are necessary for planar photonic device engineering. Here we demonstrate epitaxial growth of single crystal diamond membranes using a conventional microwave chemical vapor deposition (CVD) technique. The grown membranes, only a few hundred nanometers thick, show bright luminescence, excellent Raman signature and good NV center electronic spin coherence times. Microdisk cavities fabricated from these membranes exhibit quality factors of up to 3000, overlapping with NV center emission. Our methodology offers a scalable approach for diamond device fabrication for photonics, spintronics, optomechanics and sensing applications.

  19. Homoepitaxial Growth of Single Crystal Diamond Membranes for Quantum Information Processing

    E-Print Network [OSTI]

    Aharonovich, Igor; Magyar, Andrew P; Buckley, Bob B; Yale, Christopher G; Awschalom, David D; Hu, Evelyn L

    2011-01-01T23:59:59.000Z

    Fabrication of devices designed to fully harness the unique properties of quantum mechanics through their coupling to quantum bits (qubits) is a prominent goal in the field of quantum information processing (QIP). Among various qubit candidates, nitrogen vacancy (NV) centers in diamond have recently emerged as an outstanding platform for room temperature QIP. However, formidable challenges still remain in processing diamond and in the fabrication of thin diamond membranes, which are necessary for planar photonic device engineering. Here we demonstrate epitaxial growth of single crystal diamond membranes using a conventional microwave chemical vapor deposition (CVD) technique. The grown membranes, only a few hundred nanometers thick, show bright luminescence, excellent Raman signature and good NV center electronic spin coherence times. Microdisk cavities fabricated from these membranes exhibit quality factors of up to 3000, overlapping with NV center emission. Our methodology offers a scalable approach for dia...

  20. Critical Fields, Thermally Activated Transport, and Critical Current Density of Beta-FeSe Single Crystals

    SciTech Connect (OSTI)

    Petrovic, C.; Lei, H.; Hu, R.

    2011-07-27T23:59:59.000Z

    We present critical fields, thermally activated flux flow (TAFF), and critical current density of tetragonal phase {beta}-FeSe single crystals. The upper critical fields H{sub c2}(T) for H {parallel} (101) and H {perpendicular} (101) are nearly isotropic and are likely governed by the Pauli limiting process. The large Ginzburg-Landau parameter {Kappa} {approx} 72.3(2) indicates that {beta}-FeSe is a type-II superconductor with a smaller penetration depth than in Fe(Te, Se). The resistivity below T{sub c} follows Arrhenius TAFF behavior. For both field directions below 30 kOe, single-vortex pinning is dominant, whereas collective creep becomes important above 30 kOe. The critical current density J{sub c} from M-H loops for H {parallel} (101) is about five times larger than for H {perpendicular} (101), yet much smaller than in other iron-based superconductors.

  1. Long-Lived, Coherent Acoustic Phonon Oscillations in GaN Single Crystals

    SciTech Connect (OSTI)

    Wu, S.; Geiser, P.; Jun, J.; Karpinski, J.; Park, J.-R.; Sobolewski, R.

    2006-01-31T23:59:59.000Z

    We report on coherent acoustic phonon (CAP) oscillations studied in high-quality bulk GaN single crystals with a two-color femtosecond optical pump-probe technique. Using a far-above-the-band gap ultraviolet excitation (~270 nm wavelength) and a near-infrared probe beam (~810 nm wavelength), the long-lived, CAP transients were observed within a 10 ns time-delay window between the pump and probe pulses, with a dispersionless (proportional to the probe-beam wave vector) frequency of ~45 GHz. The measured CAP attenuation corresponded directly to the absorption of the probe light in bulk GaN, indicating that the actual (intrinsic) phonon-wave attenuation in our crystals was significantly smaller than the measured 65.8 cm^-1 value. The velocity of the phonon propagation was equal to the velocity of sound in GaN.

  2. Optical properties of Eu{sup 2+} doped antipervoskite fluoride single crystals

    SciTech Connect (OSTI)

    Daniel, D. Joseph; Ramasamy, P. [Centre for Crystal Growth, SSN College of Engineering, kalavakkam, Tamilnadu- 603 110 (India); Nithya, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamilnadu - 603 102 (India); Madhusoodanan, U. [Radiological Safety Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamilnadu - 603 102 (India)

    2013-02-05T23:59:59.000Z

    Single crystals of pure and Eu{sup 2+} doped LiBaF{sub 3} have been grown from melt by using a vertical Bridgman-Stockbarger method. Absorption and luminescence spectra for pure and rare-earth-doped LiBaF{sub 3} were studied. At ambient conditions the photoluminescence spectra consisted of sharp lines peaked at {approx}359 nm attributed to the {sup 6}P7/2{yields}{sup 8}S7/2 transitions in the 4f{sub 7} electronic configuration of Eu{sup 2+} and a broad band extending between 370 and 450 nm attributed to Eu{sup 2+} trapped exciton recombination. The effect of {sup 60}Co gamma irradiation has also been investigated.

  3. The growth of single-crystals of Pb-K-Niobate and temperature dependence of dielectric property

    E-Print Network [OSTI]

    Islam, Faizul

    1986-01-01T23:59:59.000Z

    THE GROWTH OF SINGLE-CRYSTALS OF PB-K-NIOBATE AND TEMPERATURE DEPENDENCE OF DIELECTRIC PROPERTY A Thesis FAIZUL ISLAM Submitted to the Graduate College of Texas AdrM University in partial ful6llment of the requirement for the degree of MASTER... OF SCIENCE August 1986 Major Subject: Electrical Engineering THE GROWTH OF SINGLE-CRYSTALS OF PB-K-NIOBATE AND CHARACTERIZATION OF DIELECTRIC PROPERTY A Thesis by FAIZUL ISLAM Approved as to style and content by: Dr. Raghvendra y (Chairman...

  4. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect (OSTI)

    Carmody, M.; Gilmore, A.

    2011-05-01T23:59:59.000Z

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  5. Synthesis and single crystal structure refinement of the one-layer hydrate of sodium brittle mica

    SciTech Connect (OSTI)

    Kalo, Hussein; Milius, Wolfgang [Lehrstuhl fuer Anorganische Chemie I, University of Bayreuth, D-95440 Bayreuth (Germany)] [Lehrstuhl fuer Anorganische Chemie I, University of Bayreuth, D-95440 Bayreuth (Germany); Braeu, Michael [BASF Construction Chemicals GmbH, 83308 Trostberg (Germany)] [BASF Construction Chemicals GmbH, 83308 Trostberg (Germany); Breu, Josef, E-mail: Josef.Breu@uni-bayreuth.de [Lehrstuhl fuer Anorganische Chemie I, University of Bayreuth, D-95440 Bayreuth (Germany)] [Lehrstuhl fuer Anorganische Chemie I, University of Bayreuth, D-95440 Bayreuth (Germany)

    2013-02-15T23:59:59.000Z

    A sodium brittle mica with the ideal composition [Na{sub 4}]{sup inter}[Mg{sub 6}]{sup oct}[Si{sub 4}Al{sub 4}]{sup tet}O{sub 20}F{sub 4} was synthesized via melt synthesis in a gas tight crucible. This mica is unusual inasmuch as the known mica structure holds only room for two interlayer cations per unit cell and inasmuch as it readily hydrates despite the high layer charge while ordinary micas and brittle micas are non-swelling. The crystal structure of one-layer hydrate sodium brittle mica was determined and refined from single crystal X-ray data. Interlayer cations reside at the center of the distorted hexagonal cavities and are coordinated by the three inner basal oxygen atoms. The coordination of the interlayer cation is completed by three interlayer water molecules residing at the center of the interlayer region. The relative position of adjacent 2:1-layers thus is fixed by these octahedrally coordinated interlayer cations. Pseudo-symmetry leads to extensive twinning. In total five twin operations generate the same environment for the interlayer species and are energetically degenerate. - Graphical abstract: The sodium brittle mica has been successfully synthesized by melt synthesis and the crystal structure of the one-layer hydrate of sodium brittle mica was determined from single crystal X-ray diffraction data. Highlights: Black-Right-Pointing-Pointer Melt synthesis yielded coarse grained sodium brittle mica which showed little disorder. Black-Right-Pointing-Pointer Sodium brittle mica hydrated completely to the state of one-layer hydrate. Black-Right-Pointing-Pointer Structure of one-layer hydrate of sodium brittle mica could therefore be determined and refined. Black-Right-Pointing-Pointer Arrangement of upper and lower tetrahedral sheet encompassing interlayer cation were clarified.

  6. Thermal transport of the single-crystal rare-earth nickel borocarbides RNi2B2C

    E-Print Network [OSTI]

    Hennings, BD; Naugle, Donald G.; Canfield, PC.

    2002-01-01T23:59:59.000Z

    superconductivity in this material above T-N. Unlike the case for the non-magnetic superconductors in the family, R=Y and Lu, a phonon peak in the thermal conductivity below T-c is not observed down to T=1.4 K for the magnetic superconductors. Single-crystal quality...

  7. Fabrication and optical properties of single-crystal YAG fiber optics Brian.T. Laustsen and James A. Harrington

    E-Print Network [OSTI]

    . In this method a CO2 laser is used to melt the tip of a crystalline source rod and a fiber is pulled upward from reservoir. In one method a high temperature crucible usually made of tungsten is used to contain the meltFabrication and optical properties of single-crystal YAG fiber optics Brian.T. Laustsen and James A

  8. Study of the superconducting gap in RNi2B2C,,RY, Lu... single crystals by inelastic light scattering

    E-Print Network [OSTI]

    Yang, In-Sang

    Study of the superconducting gap in RNi2B2C,,RÃ?Y, Lu... single crystals by inelastic light Initiative Center for Superconductivity, Department of Physics, Pohang University of Science and Technology, 790-390 Pohang, Korea Received 28 February 2000 Superconductivity-induced changes in the electronic

  9. Patterned aluminum nanowires produced by electron beam at the surfaces of AlF3 single crystals

    E-Print Network [OSTI]

    Wang, Zhong L.

    Patterned aluminum nanowires produced by electron beam at the surfaces of AlF3 single crystals C is demonstrated for fabricating patterned aluminum nanowires in AlF3 substrate in a scanning electron microscope nanowires of different sizes. The aluminum nanowires may act as nano- interconnects for nanoelectronics

  10. PHYSICAL REVIEW B 83, 104511 (2011) Superconducting energy gap in MgCNi3 single crystals: Point-contact spectroscopy

    E-Print Network [OSTI]

    Boyer, Edmond

    2011-01-01T23:59:59.000Z

    PHYSICAL REVIEW B 83, 104511 (2011) Superconducting energy gap in MgCNi3 single crystals: Point Center for Superconductivity, Sogang University, Seoul 100-611, Republic of Korea (Received 14 December that a superconducting energy gap is fully open on the whole Fermi surface, in agreement with our previous magnetic

  11. ENHANCEMENT OF THE POSITRON INTENSITY BY A TUNGSTEN SINGLE-CRYSTAL TARGET AT THE KEKB INJECTOR LINAC

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    by these stimulating results, we proceeded to systematic studies on the positron-production efficiencies with tungstenENHANCEMENT OF THE POSITRON INTENSITY BY A TUNGSTEN SINGLE-CRYSTAL TARGET AT THE KEKB INJECTOR, Russia R. Chehab, IPNL, IN2P3-CNRS, Universite Claude Bernald 1, France Abstract A new tungsten single

  12. From Ultrananocrystalline Diamond to Single Crystal Diamond Growth in Hot Filament and Microwave Plasma-Enhanced CVD Reactors: a Unified Model for Growth Rates and

    E-Print Network [OSTI]

    Bristol, University of

    From Ultrananocrystalline Diamond to Single Crystal Diamond Growth in Hot Filament and Microwave, Moscow State UniVersity, 119991 Moscow, Russia ReceiVed: April 29, 2008 CVD Diamond can now be deposited either in the form of single crystal homoepitaxial layers, or as polycrystalline films with crystal sizes

  13. Mesoscale Heterogeneity in the Plastic Deformation of a Copper Single Crystal

    SciTech Connect (OSTI)

    Magid, K R; Florando, J N; Lassila, D H; LeBlanc, M M; Tamura, N; Morris Jr., J W

    2007-02-21T23:59:59.000Z

    The work reported here is part of a 'multiscale characterization' study intended to clarify the deformation pattern in a Cu single crystal deformed in compression. A copper single crystal was oriented for single slip in the (111)[{bar 1}01] slip system and tested to {approx}10% strain in uniaxial compression, using a specifically designed '6 degree of freedom' compressive test device to achieve uniaxial strain. The macroscopic strain field was monitored during the test by optical 'image correlation' methods that mapped the strain field with a spatial resolution of about 100 {micro}m. The strain field was measured on orthogonal surfaces, one of which (the x-face) was oriented perpendicular to [1{bar 2}1] and contained the [{bar 1}01] direction of the preferred slip system. The macroscopic strain produced is an inhomogeneous pattern of broad, crossed shear bands in the x-face. One, the primary band, lay parallel to (111). The second, the 'conjugate' band, was oriented perpendicular to (111) and contains no common slip plane of the fcc crystal. The mesoscopic structure of the inhomogeneous macroscopic deformation pattern was explored with selected area diffraction, using a focused synchrotron radiation polychromatic beam with a resolution of 1-3 {micro}m. Areas within the primary, conjugate and primary + conjugate strain regions of the x-face were identified and mapped for their orientation, excess defect density and shear stress. The mesoscopic defect structure consisted of broad, somewhat irregular primary bands that lay nominally parallel to (111) in a almost periodic distribution with a period of about 30 {micro}m. These primary bands were dominant even in the region of conjugate strain. There were also broad conjugate defect bands, almost precisely perpendicular to the primary bands that tended to bridge primary bands and terminate at them. The residual shear stresses were large (ranging to well above 500 MPa) and strongly correlated with the primary shear bands. The results are compared to the mesoscopic defect patterns found in Cu in etch pit studies done some decades ago.

  14. Pressure effect on ionic conductivity in yttrium-oxide-doped single-crystal zirconium oxide

    SciTech Connect (OSTI)

    Park, E.T.; Park, J.H.

    1998-06-01T23:59:59.000Z

    In this study, the authors investigated the effect of pressure on the ionic conductivity of a 9.5 mol% yttria-stabilized zirconia (YSZ) single crystal. The experiment was conducted in the elastic region, and the oxygen ion transport number was unity (t{sub ion} > 0.99999). A conventional four-probe DC method was used to measure the ionic conductivity of the rectangular-shaped sample under uniaxial pressures up to 600 atm at 750 C in air. Measured ionic conductivity decreased as applied pressure increased. Based on henry Eyring`s absolute reaction rate theory, which states that the calculated activation volume has a positive value ({Delta}V{sup 2} = 2.08 cm{sup 3}/mol of O{sup {minus}2}) for oxygen ion transport in the fluoride cubic lattice, they concluded that the results they obtained could be explained by an oxygen ion transport mechanism. This mechanism can explain the fact that the interionic distance increases during oxygen ion transport from one unit cell to neighboring unit cells.

  15. Direct observation of plasticity and quantitative hardness measurements in single crystal cyclotrimethylene trinitramine by nanoindention

    SciTech Connect (OSTI)

    Ramos, Kyle J [Los Alamos National Laboratory; Hooks, David E [Los Alamos National Laboratory; Bahr, David F [WSU

    2008-01-01T23:59:59.000Z

    Investigation of deformation beginning with elasticity and continuing through the elastic-plastic transition to incipient cracking has been conducted for (210), (021), and (001) oriented single crystals of the explosive cyclotrimethylene trinitramine, commonly known as 'RDX' Instrumented indentation was performed with a conical tip over a range of loads. The resulting load-depth data exhibited distinct, reproducible, orientation dependent load excursions demonstrating elastic-plastic transitions. Indent impressions were imaged by scanning probe microscopy. Impressions on the (210) and (001) planes showed deformation pileup features associated with zone axes of slip planes. Clearly discernable slip traces were evident on the (210) plane. The (021) indentations produced significant material pile-up surrounding the impression, but did not contain discrete features associable with specific zone axes. All of the orientations exhibited cracking thresholds at very low loads. The reduced moduli were anisotropic and the hardness's were isotropic indicating limited plasticity. Maximum shear stresses estimated from a Hertzian model, at load excursions, were within a factor of 10 of published shear moduli indicating deformation initiated near the theoretical yield strength presumably by homogeneous nucleation of dislocations. The material strength parameters and apparent deformation pathways inferred from this work are compared to historical microhardness testing and interpretation of anisotropic hardness in which ambiguity of results can be attributed to the effects of cracking and simultaneous slip on multiple systems.

  16. Prediction method of basic domain structure in Fe3%Si(110) single crystal with grooved surface

    SciTech Connect (OSTI)

    Iwata, K., E-mail: iwata.24h.keiji@jp.nssmc.com [Advanced Technology Research Laboratories, Nippon Steel and Sumitomo Metal Corporation, Futtsu, Chiba 293-8511 (Japan); Research Institute of Electrical Communication, Tohoku University, Aoba, Sendai 980-8577 (Japan); Fujikura, M. [Yawata R and D Laboratories, Nippon Steel and Sumitomo Metal Corporation, Tobata, Kitakyushu, Fukuoka 804-8501 (Japan); Arai, S. [Steel Research Laboratories, Nippon Steel and Sumitomo Metal Corporation, Futtsu, Chiba 293-8511 (Japan); Ishiyama, K. [Research Institute of Electrical Communication, Tohoku University, Aoba, Sendai 980-8577 (Japan)

    2014-05-07T23:59:59.000Z

    This paper proposes the method to accurately predict the 180° basic domain width (D{sub w}) in demagnetized states of the grooved Fe3%Si(110) single crystal with the tilt angle of [001] out of the sheet surface (?). The evaluation of D{sub w} enables the estimation of the anomalous eddy current losses. In this paper, D{sub w} is optimized to minimize the magnetic Gibbs free energy represented by vector potentials using the finite element method and the conjugate gradient method. The ?*-method is adopted to approximate the magnetization relaxation. The stray field energy generated by the magnetic charges occurring on both grooves cross section and sheet surfaces is considered in our proposed method. The validity of the proposed method was confirmed by comparison with the observed D{sub w}. As a result, we could reveal the ? dependence of D{sub w} against the groove depth. Moreover, the theoretical threshold of the domain refinement due to the grooves has been suggested.

  17. TEM and SIMS Analysis of (100), (110), and (111) Single Crystal Niobium

    SciTech Connect (OSTI)

    A. D. Batchelor; D. N. Leonard; P. E. Russell; F. A. Stevie; D. P. Griffis; G. R. Myneni

    2006-10-30T23:59:59.000Z

    Single crystal niobium specimens of (100), (110) and (111) crystal orientations have been analyzed using TEM and SIMS. The TEM specimens were prepared using Focused Ion Beam (FIB) and show niobium oxide thicknesses ranging from 4.9 to 8.3 nm for the three specimens after buffer chemical polishing. The oxide layers appear uniform and no significant sub-oxide region was noted. SIMS analysis was made for all three orientations on hydrogen, carbon, and oxygen before and after heat treatments at 90, 600, and 1250ºC. Hydrogen is at a high level between the oxide layer and niobium, but at a relatively low level in the oxide. No high oxygen concentration region was noted in the niobium below the oxide. C contamination on the surface is detected mainly at the surface. Analysis after heat treatments showed some decrease in hydrogen after the 600ºC heat treatment, and significant oxidation of the niobium after the 1250ºC heat treatment.

  18. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Kagan, Harris; Kass, Richard; Gan, K.K.

    2014-01-23T23:59:59.000Z

    With the LHC upgrades in 2013, and further LHC upgrades scheduled in 2018, most LHC experiments are planning for detector upgrades which require more radiation hard technologies than presently available. At present all LHC experiments now have some form of diamond detector. As a result Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of all LHC experiments. Moreover CVD diamond is now being discussed as an alternative sensor material for tracking very close to the interaction region of the HL-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications. Our accomplishments include: • Developed a two U.S.companies to produce electronic grade diamond, • Worked with companies and acquired large area diamond pieces, • Performed radiation hardness tests using various proton energies: 70 MeV (Cyric, Japan), 800 MeV (Los Alamos), and 24 GeV (CERN).

  19. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.

    2005-10-01T23:59:59.000Z

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  20. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 14, NO. 4, AUGUST 2005 707 A Single-Crystal Silicon Symmetrical and Decoupled

    E-Print Network [OSTI]

    Akin, Tayfun

    Optical cross-connect system based on the White cell and three-state microelectromechanical system on the optical White cell and a three-state microelectromechanical system tilting mirror array. We describe. Here, however, we are interested in free-space sys- tems using microelectromechanical systems (MEMSs

  1. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 13, NO. 6, DECEMBER 2004 1043 VHF Single-Crystal Silicon Elliptic Bulk-Mode

    E-Print Network [OSTI]

    Ayazi, Farrokh

    - mechanical coupling, elliptic bulk-mode, equivalent electrical circuit, temperature coefficient of frequency-plane vibrations of the disk struc- tures is described using the two-dimensional (2-D) elastic theory. An equivalent mechanical model is extracted from the elliptic bulk-mode shape to predict the dynamic behavior

  2. Method of forming crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, A.M.

    1995-03-21T23:59:59.000Z

    A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

  3. Method of forming crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1995-01-01T23:59:59.000Z

    A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

  4. Synthesis, Crystal Structure, and Magnetism of ?-Fe1.00(2)Se1.00(3) Single Crystals

    SciTech Connect (OSTI)

    Petrovic, C.; Billinge, S.

    2011-06-20T23:59:59.000Z

    Understanding iron-based superconductors requires high-quality impurity-free single crystals. So far they have been elusive for {beta}-FeSe and extraction of intrinsic materials properties has been compromised by several magnetic-impurity phases. Here, we report synchrotron-clean {beta}-FeSe superconducting single crystals grown via LiCl/CsCl flux method. Phase purity yields evidence for a defect-induced weak ferromagnetism that coexists with superconductivity below T{sub c}. In contrast to Fe{sub 1+y}Te-based superconductors, our results reveal that the interstitial Fe(2) site is not occupied and that all contribution to density of states at the Fermi level must come from in-plane Fe(1).

  5. Growth of single-crystal {alpha}-MnO{sub 2} nanorods on multi-walled carbon nanotubes

    SciTech Connect (OSTI)

    Chen Yong [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China); Key Laboratory of Tropic Biological Resources, MOE, Hainan University, 58 Renmin Road, Haikou 570228 (China); Liu Chenguang; Liu Chang [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China); Lu Gaoqing [ARC Centre for Functional Nanomaterials, Australian Institute of Bioengineering and Nanotechnology, University of Queensland, QLD 4072 (Australia); Cheng Huiming [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China)], E-mail: cheng@imr.ac.cn

    2007-11-06T23:59:59.000Z

    Single-crystal {alpha}-MnO{sub 2} nanorods were grown on multi-walled carbon nanotubes (MWNTs) in H{sub 2}SO{sub 4} aqueous solution. The morphology and microstructure of the composites were examined by transmission electron microscopy, high-resolution transmission electron microscopy (HRTEM), X-ray diffractometry and energy dispersive spectroscopy (EDS). The results show that {alpha}-MnO{sub 2} single-crystal nanorods with a mean diameter of 15 nm were densely grown on the surface of MWNTs. Those MWNTs/MnO{sub 2} composites were used as an electrode material for supercapacitors, and it was found that the supercapacitor performance using MWNTs/MnO{sub 2} composites was improved largely compared to that using pure MWNTs and {alpha}-MnO{sub 2} nanorod mechanically mixed with MWNTs.

  6. Coherent and incoherent radiation from high-energy electron and the LPM effect in oriented single crystal

    E-Print Network [OSTI]

    V. N. Baier; V. M. Katkov

    2005-12-01T23:59:59.000Z

    The process of radiation from high-energy electron in oriented single crystal is considered using the method which permits inseparable consideration of both coherent and incoherent mechanisms of photon emission. The total intensity of radiation is calculated. The theory, where the energy loss of projectile has to be taken into account, agrees quite satisfactory with available CERN data. It is shown that the influence of multiple scattering on radiation process is suppressed due to action of crystal field.

  7. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

    SciTech Connect (OSTI)

    Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A. [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece)] [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Grazianetti, C.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy) [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, I-20126, Milano (Italy); Chiappe, D.; Molle, A. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy)] [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy)

    2013-12-16T23:59:59.000Z

    Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

  8. Tetracene air-gap single-crystal field-effect transistors Yu Xia, Vivek Kalihari, and C. Daniel Frisbiea

    E-Print Network [OSTI]

    Rogers, John A.

    Tetracene air-gap single-crystal field-effect transistors Yu Xia, Vivek Kalihari, and C. Daniel FETs utilizing an air or vacuum gap as the gate dielectric. The linear mobility of the device can be as high as 1.6 cm2 /V s in air, with a subthreshold slope lower than 0.5 V nF/decade cm2 . By changing

  9. The crystal structure of {pi}-ErBO{sub 3}: New single-crystal data for an old problem

    SciTech Connect (OSTI)

    Pitscheider, Almut [Institut fuer Allgemeine, Anorganische und Theoretische Chemie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria); Kaindl, Reinhard [Institut fuer Mineralogie und Petrographie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52, A-6020 Innsbruck (Austria); Oeckler, Oliver [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen, Butenandtstrasse 5-13, D-81377 Muenchen (Germany); Huppertz, Hubert, E-mail: Hubert.Huppertz@uibk.ac.a [Institut fuer Allgemeine, Anorganische und Theoretische Chemie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria)

    2011-01-15T23:59:59.000Z

    Single crystals of the orthoborate {pi}-ErBO{sub 3} were synthesized from Er{sub 2}O{sub 3} and B{sub 2}O{sub 3} under high-pressure/high-temperature conditions of 2 GPa and 800 {sup o}C in a Walker-type multianvil apparatus. The crystal structure was determined on the basis of single-crystal X-ray diffraction data, collected at room temperature. The title compound crystallizes in the monoclinic pseudowollastonite-type structure, space group C2/c, with the lattice parameters a=1128.4(2) pm, b=652.6(2) pm, c=954.0(2) pm, and {beta}=112.8(1){sup o} (R{sub 1}=0.0124 and wR{sub 2}=0.0404 for all data). -- graphical abstract: The first satisfying single-crystal structure determination of {pi}-ErBO{sub 3} sheds light on the extensively discussed structure of {pi}-orthoborates. The application of light pressure during the solid state synthesis yielded in high-quality crystals, due to pressure-induced crystallization. Research highlights: {yields} High-quality single crystals of {pi}-ErBO{sub 3} were prepared via high-pressure-induced crystallization. {yields} At least five different space groups for the rare-earth {pi}-orthoborates are reported. {yields} {pi}-ErBO{sub 3} is isotypic to the pseudowollastonite-type CaSiO{sub 3}. {yields} Remaining ambiguities regarding the structure of the rare-earth {pi}-orthoborates are resolved.

  10. EPR investigation of defects in Bi12GeO20:Cr single crystal irradiated by high energy uranium ions

    E-Print Network [OSTI]

    Stefaniuk, I; Rogalska, I; Wróbel, D

    2013-01-01T23:59:59.000Z

    The results of investigations of EPR spectra of chromium doped $Bi_{12} GeO_{20} (BGO)$ single crystals are presented. The crystals were studied before and after irradiation by the $^{235}U$ ions with energy 9.47 MeV/u and fluency $5 \\cdot 10^{2} cm^{-2}$. The effect of heating irradiated samples in air on the EPR spectra is also studied.

  11. Influence of composition on microstructural parameters of single crystal nickel-base superalloys

    SciTech Connect (OSTI)

    MacKay, R.A., E-mail: Rebecca.A.MacKay@nasa.gov [NASA Glenn Research Center, 21000 Brookpark Rd., Cleveland, Ohio 44135 (United States); Gabb, T.P. [NASA Glenn Research Center, 21000 Brookpark Rd., Cleveland, Ohio 44135 (United States); Garg, A. [NASA Glenn Research Center, 21000 Brookpark Rd., Cleveland, Ohio 44135 (United States); University of Toledo, 2801 W. Bancroft, Toledo, Ohio 43606 (United States); Rogers, R.B.; Nathal, M.V. [NASA Glenn Research Center, 21000 Brookpark Rd., Cleveland, Ohio 44135 (United States)

    2012-08-15T23:59:59.000Z

    Fourteen nickel-base superalloy single crystals containing a range of chromium (Cr), cobalt (Co), molybdenum (Mo), and rhenium (Re) levels, and fixed amounts of aluminum (Al) and tantalum (Ta), were examined to determine the effect of bulk composition on basic microstructural parameters, including {gamma} Prime solvus, {gamma} Prime volume fraction, topologically close-packed (TCP) phases, {gamma} and {gamma} Prime phase chemistries, and {gamma}-{gamma} Prime lattice mismatch. Regression models describing the influence of bulk alloy composition on each of the microstructural parameters were developed and compared to predictions by a commercially-available software tool that used computational thermodynamics. Co produced the largest change in {gamma} Prime solvus over the wide compositional range explored and Mo produced the biggest effect on the {gamma} lattice parameter over its range, although Re had a very potent influence on all microstructural parameters investigated. Changing the Cr, Co, Mo, and Re contents in the bulk alloy had an impact on their concentrations in the {gamma} matrix and to a smaller extent in the {gamma} Prime phase. The software tool under-predicted {gamma} Prime solvus temperatures and {gamma} Prime volume fractions, and over-predicted TCP phase volume fractions at 982 Degree-Sign C. However, the statistical regression models provided excellent estimations of the microstructural parameters and demonstrated the usefulness of such formulas. - Highlights: Black-Right-Pointing-Pointer Effects of Cr, Co, Mo, and Re on microstructure in new low density superalloys Black-Right-Pointing-Pointer Co produced a large change in {gamma} Prime solvus; Mo had a large effect on lattice mismatch. Black-Right-Pointing-Pointer Re exhibited very potent influence on all microstructural parameters was investigated. Black-Right-Pointing-Pointer {gamma} and {gamma} Prime phase chemistries both varied with temperature and alloy composition. Black-Right-Pointing-Pointer Computational thermodynamic modeling tool did not accurately predict microstructure.

  12. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    SciTech Connect (OSTI)

    Zhu, Xiaoyang

    2014-12-10T23:59:59.000Z

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of charge carriers is known to evolve as the carrier concentration increases, due to the presence of intrinsic disorder in organic semiconductors. Thus, a complementary question is: how does the nature of charge transport change as a function of carrier concentration?

  13. Crystallographic, electronic, thermal, and magnetic properties of single-crystal SrCo2As2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pandey, Abhishek [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Quirinale, D. G. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Jayasekara, W. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Sapkota, A. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Kim, M. G. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Dhaka, R. S. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Lee, Y. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Heitmann, T. W. [Univ. of Missouri, Columbia, MO (United States). Missouri Research Reactor; Stephens, P. W. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Ogloblichev, V. [Russian Academy of Sciences, Urals Div., Ekaterinburg (Russian Federation). Inst. of Metal Physics; Kreyssig, A. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; McQueeney, R. J. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Goldman, A. I. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Kaminski, Adam [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Harmon, B. N. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Furukawa, Y. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Johnston, D. C. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy

    2013-07-01T23:59:59.000Z

    In tetragonal SrCo2As2 single crystals, inelastic neutron scattering measurements demonstrated that strong stripe-type antiferromagnetic (AFM) correlations occur at a temperature T = 5 K [W. Jayasekara et al., arXiv:1306.5174] that are the same as in the isostructural AFe2As2 (A = Ca, Sr, Ba) parent compounds of high-Tc superconductors. This surprising discovery suggests that SrCo2As2 may also be a good parent compound for high-Tc superconductivity. Here, structural and thermal expansion, electrical resistivity ?, angle-resolved photoemission spectroscopy (ARPES), heat capacity Cp, magnetic susceptibility ?, 75As NMR and neutron diffraction measurements of SrCo2As2 crystals are reported together with LDA band structure calculations that shed further light on this fascinating material. The c-axis thermal expansion coefficient ?c is negative from 7 to 300 K, whereas ?a is positive over this T range. The ?(T) shows metallic character. The ARPES measurements and band theory confirm the metallic character and in addition show the presence of a flat band near the Fermi energy EF. The band calculations exhibit an extremely sharp peak in the density of states D(EF) arising from a flat dx2-y2 band. A comparison of the Sommerfeld coefficient of the electronic specific heat with ?(T ? 0) suggests the presence of strong ferromagnetic itinerant spin correlations which on the basis of the Stoner criterion predicts that SrCo2As2 should be an itinerant ferromagnet, in conflict with the magnetization data. The ?(T) does have a large magnitude, but also exhibits a broad maximum at 115 K suggestive of dynamic short-range AFM spin correlations, in agreement with the neutron scattering data. The measurements show no evidence for any type of phase transition between 1.3 and 300 K and we propose that metallic SrCo2As2 has a gapless quantum spin-liquid ground state.

  14. Proton irradiation effects on critical current of bulk single-crystal superconducting YBCO wire

    SciTech Connect (OSTI)

    Khanna, S.M. [Defence Research Establishment Ottawa, Ontario (Canada)] [Defence Research Establishment Ottawa, Ontario (Canada); Figueredo, A.M. [National Research Council, Boucherville, Quebec (Canada). Industrial Materials Inst.] [National Research Council, Boucherville, Quebec (Canada). Industrial Materials Inst.

    1997-12-01T23:59:59.000Z

    The authors have investigated the effects of 10 MeV proton irradiation on the magnetization M and critical current density J{sub c} of bulk single-crystal YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) superconducting thick wire filaments produced through laser-heated floating zone (LHFZ) technique. M and J{sub c} were determined both along the length and perpendicular to the length of the wire. Radiation-induced enhancement of J{sub c} along the length of the wire was observed while there was a small decrease in J{sub c} {perpendicular} to its length. J{sub c} values along the length of the wire up to {approximately}1.4 {times} 10{sup 5} A/cm{sup 2} at 77K and {approximately}1.3 {times} 10{sup 6} A/cm{sup 2} at 30K and in applied magnetic field H = 1 T were observed in the irradiated samples. In the unirradiated sample, the difference in magnetization {Delta}M at a given field in the magnetic hysteresis loop for increasing and decreasing field applied {perpendicular} to the sample length was observed to depend on the orientation of the sample about its axis. This indicates anisotropy in J{sub c} along the sample length. This anisotropy increased on irradiation relative to the direction of irradiation. They believe that these J{sub c} values along the length are amongst the highest published J{sub c} values for bulk high temperature superconductor (HTS) thick wire filament.

  15. Performance Test of Amorphous Silicon Modules in Different Climates - Year Four: Progress in Understanding Exposure History Stabilization Effects; Preprint

    SciTech Connect (OSTI)

    Ruther, R.; Montenegro, A. A.; del Cueto, J.; Rummel, S.; Anderberg, A.; von Roedern, B.; Tamizh-Mani, G.

    2008-05-01T23:59:59.000Z

    The four-year experiment involved three identical sets of thin-film a-Si modules from various manufacturers deployed outdoors simultaneously in three sites with distinct climates. Each PV module set spent a one-year period at each site before a final period at the original site where it was first deployed.

  16. Fabrication of metal field emitter arrays on polycrystalline silicon II Hwan Kim and Chun Gyoo Lee

    E-Print Network [OSTI]

    Lee, Jong Duk

    of the gate aperture which rendered a stable emission characteristic. © 1997 American Vacuum Society. S0734 a large FEA panel using this fabrication process since the size of the single-crystal silicon wafer and the undoped polysilicon is completely con- sumed in the oxidation to form a gate insulator. The diffu- sion

  17. Mapping mesoscale heterogeneity in the plastic deformation of a copper single crystal

    SciTech Connect (OSTI)

    Magid, K. R.; Florando, J.N.; Lassila, D.H.; Leblanc, M.M.; Tamura, N.; Morris Jr, J. W.

    2008-10-01T23:59:59.000Z

    The work reported here is part of a 'multiscale characterization' study of heterogeneous deformation patterns in metals. A copper single crystal was oriented for single slip in the (111)[{bar 1}01] slip system and tested to {approx}10% strain in roughly uniaxial compression. The macroscopic strain field was monitored during the test by optical 'image correlation'. The strain field was measured on orthogonal surfaces, one of which (the x-face) was oriented perpendicular to [1{bar 2}1] and contained the [{bar 1}01] direction of the preferred slip system. The macroscopic strain developed in an inhomogeneous pattern of broad, crossed shear bands in the x-face. One, the primary band, lay parallel to (111). The second, the 'conjugate' band, was oriented perpendicular to (111) with an overall ({bar 1}01) habit that contains no common slip plane of the fcc crystal. The mesoscopic deformation pattern was explored with selected area diffraction, using a focused synchrotron radiation polychromatic beam with a resolution of 1-3 {micro}m. Areas within the primary, conjugate and mixed (primary + conjugate) strain regions of the x-face were identified and mapped for their orientation, excess defect density and shear stress. The mesoscopic defect structure was concentrated in broad, somewhat irregular primary bands that lay nominally parallel to (111) in an almost periodic distribution with a period of about 30 {micro}m. These primary bands were dominant even in the region of conjugate strain. There were also broad conjugate defect bands, almost precisely perpendicular to the primary bands, that tended to bridge primary bands and terminate at them. The residual shear stresses were large (ranging to well above 500 MPa) and strongly correlated with the primary shear bands; interband stresses were small. The maximum resolved shear stresses within the primary bands were oriented out of the plane of the bands, and, hence, could not recover the dislocation structure in the bands. The maximum resolved shear stresses in the interband regions lay predominantly in {l_brace}111{r_brace} planes. The results are compared to the mesoscopic defect patterns found in Cu in etch pit studies done some decades ago, which also revealed a mesoscopic dislocation structure made up of orthogonal bands.

  18. Crystallographic, electronic, thermal, and magnetic properties of single-crystal SrCo2As2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pandey, Abhishek; Quirinale, D. G.; Jayasekara, W.; Sapkota, A.; Kim, M. G.; Dhaka, R. S.; Lee, Y.; Heitmann, T. W.; Stephens, P. W.; Ogloblichev, V.; et al

    2013-07-01T23:59:59.000Z

    In tetragonal SrCo2As2 single crystals, inelastic neutron scattering measurements demonstrated that strong stripe-type antiferromagnetic (AFM) correlations occur at a temperature T = 5 K [W. Jayasekara et al., arXiv:1306.5174] that are the same as in the isostructural AFe2As2 (A = Ca, Sr, Ba) parent compounds of high-Tc superconductors. This surprising discovery suggests that SrCo2As2 may also be a good parent compound for high-Tc superconductivity. Here, structural and thermal expansion, electrical resistivity ?, angle-resolved photoemission spectroscopy (ARPES), heat capacity Cp, magnetic susceptibility ?, 75As NMR and neutron diffraction measurements of SrCo2As2 crystals are reported together with LDA band structure calculations thatmore »shed further light on this fascinating material. The c-axis thermal expansion coefficient ?c is negative from 7 to 300 K, whereas ?a is positive over this T range. The ?(T) shows metallic character. The ARPES measurements and band theory confirm the metallic character and in addition show the presence of a flat band near the Fermi energy EF. The band calculations exhibit an extremely sharp peak in the density of states D(EF) arising from a flat dx2-y2 band. A comparison of the Sommerfeld coefficient of the electronic specific heat with ?(T ? 0) suggests the presence of strong ferromagnetic itinerant spin correlations which on the basis of the Stoner criterion predicts that SrCo2As2 should be an itinerant ferromagnet, in conflict with the magnetization data. The ?(T) does have a large magnitude, but also exhibits a broad maximum at 115 K suggestive of dynamic short-range AFM spin correlations, in agreement with the neutron scattering data. The measurements show no evidence for any type of phase transition between 1.3 and 300 K and we propose that metallic SrCo2As2 has a gapless quantum spin-liquid ground state.« less

  19. Chain-oxygen ordering in twin-free YBa2Cu3O7-single crystals driven by 20-keV electron irradiation

    E-Print Network [OSTI]

    Johansen, Tom Henning

    Chain-oxygen ordering in twin-free YBa2Cu3O7- single crystals driven by 20-keV electron irradiation 2005 We have examined the effects of 20-keV electron irradiation on the -Cu 1 -O 1 - n chain-oxygen arrange- ments in oxygen-deficient but otherwise twin-free YBa2Cu3O7- single crystals. Comparison

  20. Method of bonding single crystal quartz by field-assisted bonding

    DOE Patents [OSTI]

    Curlee, R.M.; Tuthill, C.D.; Watkins, R.D.

    1991-04-23T23:59:59.000Z

    The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals. 2 figures.

  1. Method of bonding single crystal quartz by field-assisted bonding

    DOE Patents [OSTI]

    Curlee, Richard M. (Tijeras, NM); Tuthill, Clinton D. (Edgewood, NM); Watkins, Randall D. (Albuquerque, NM)

    1991-01-01T23:59:59.000Z

    The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals.

  2. Method for forming silicon on a glass substrate

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1995-01-01T23:59:59.000Z

    A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

  3. Productivity Enhancement for Manufacturing of Amorphous Silicon PV Modules: Final Technical Progress Report; 1 July 2002--31 October 2004

    SciTech Connect (OSTI)

    Volltrauer, H.; Jansen, K.

    2005-02-01T23:59:59.000Z

    The overall objective of this subcontract over its two-year duration is to continue the advancement of Energy Photovoltaics, Inc.'s (EPV) a-Si production manufacturing technology and improve the production equipment used in manufacturing. This will allow EPV to reduce module costs by increasing module output, throughput, and yield. EPV conducted parallel research efforts for achieving higher stabilized module power output through improvements in several manufacturing processing steps, with particular emphasis on the thin-film deposition process. The dual goals of achieving a 20% gain in stabilized output and a 20% reduction in direct costs were accomplished. The 20% gain in stabilized output increased the power of the standard 0.79 m2 module to about 45 watts. This was achieved through optimizing the a-Si deposition process to improve stability, increasing the active area of the module, and developing a ZnO/Al back reflector to increase the light absorption of the a-Si. Additionally, improvements were made to the a-Si uniformity, and an improved TCO was incorporated into the standard product. The goal of reducing costs by 20% was exceeded, resulting in an estimated direct cost of $1.41/W, for the process in EPV's New Jersey facility. This was accomplished through a complete review of the process that resulted in lower material costs, lower labor costs, less downtime, and higher module power, as noted above. The process was streamlined and made more efficient by eliminating or combining process steps, and selected processes were automated. In addition, improvements were made to the characterization and measurement techniques used in the module optimization process.

  4. Spontaneous Generation of Voltage in Single-Crystal Gd5Si2Ge2 During Magnetostructural Phase Transformations

    SciTech Connect (OSTI)

    M. Zou; H. Tang; D.L. Schlagel; T.A. Lograsso; K.A. Gschneidner,jr.; V.K. Pecharsky

    2006-04-19T23:59:59.000Z

    The spontaneous generation of voltage (SGV) in single-crystal and polycrystalline Gd{sub 5}Si{sub 2}Ge{sub 2} during the coupled magnetostructural transformation has been examined. Our experiments show reversible, measurable, and repeatable SGV responses of the materials to the temperature and magnetic field. The parameters of the response and the magnitude of the signal are anisotropic and rate dependent. The magnitude of the SGV signal and the critical temperatures and critical magnetic fields at which the SGV occurs vary with the rate of temperature and magnetic-field changes.

  5. Calibration methodology for a dual-ended readout silicon photomultiplier based depth-of-interaction PET detector module

    SciTech Connect (OSTI)

    Xi, Wenze [JLAB; McKisson, John E. [JLAB; Weisenberger, Andrew G. [JLAB; Lee, Seung Joon [JLAB; Taylor, William Mark [JLAB; Stepanyan, Armenak [JLAB; Zorn, Carl J. [JLAB

    2012-11-01T23:59:59.000Z

    We developed a novel calibration methodology for a PET detector with dual-ended readout of an LYSO array by two silicon photomultipliers (SiPMs). By introducing a detector gain balancing step in the calibration process, improved depth-of-interaction calibration uniformity and accuracy can be achieved. The entire calibration process has four steps: scintillation crystal array mappings for two SiPM readouts, detector gain balancing, energy calibration, and depth-of-interaction calibration. This document provides a detailed description on the detector calibration system setup.

  6. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    SciTech Connect (OSTI)

    Maruska, P. [Spire Corp., Bedford, MA (United States)] [Spire Corp., Bedford, MA (United States)

    1996-09-01T23:59:59.000Z

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  7. Hydrostatic pressure (8 GPa) dependence of electrical resistivity of BaCo{sub 2}As{sub 2} single crystal

    SciTech Connect (OSTI)

    Ganguli, Chandreyee; Matsubayashi, Kazuyuki; Ohgushi, Kenya [Institute for Solid State Physics, The University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Uwatoko, Yoshiya, E-mail: uwatoko@issp.u-tokyo.ac.jp [Institute for Solid State Physics, The University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Kanagaraj, Moorthi [Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024 (India); Arumugam, Sonachalam, E-mail: sarumugam1963@yahoo.com [Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024 (India)

    2013-10-15T23:59:59.000Z

    Graphical abstract: - Highlights: • Single crystals of BaCo{sub 2}As{sub 2} were grown by CoAs self-flux method. • We have studied pressure effects (8 GPa) on dc electrical resistivity of BaCo{sub 2}As{sub 2}. • On applied external pressure BaCo{sub 2}As{sub 2} remains a metallic state up to 8 GPa. • Superconductivity is absent in BaCo{sub 2}As{sub 2} because of its proximity to ferromagnetism. - Abstract: The pressure dependence of the electrical resistivity of BaCo{sub 2}As{sub 2} single crystal as a function of temperature was measured at ambient and high pressures up to 8 GPa for the first time using cubic anvil high pressure cell. It is observed that at room temperature the resistivity monotonically decreases with increasing pressure and it remains in the metallic state even at an applied pressure of 8 GPa. From the temperature dependence of the resistivity measurements under pressure, we found that superconductivity is absent up to 8 GPa. The value of the electron's scattering factor (A) is found to be large at ambient pressure and it decreases with the application of pressure, indicating that the substantial electron correlation effect of BaCo{sub 2}As{sub 2} is reduced under pressure, revealing a dramatic change of density of states at the Fermi energy.

  8. Single-crystal sup 40 Ar/ sup 39 Ar dating of the Olorgesailie Formation, southern Kenya rift

    SciTech Connect (OSTI)

    Deino, A. (Geochronology Center of the Inst. of Human Origins, Berkeley, CA (United States)); Potts, R. (Smithsonian Institution, Washington, DC (United States))

    1990-06-10T23:59:59.000Z

    Single-crystal laser fusion {sup 40}Ar/{sup 39}Ar analyses and several conventional bulk fusion {sup 40}K- {sup 40}Ar dates have been used to determine the age of volcaniclastic strata within the Olorgesailie Formation and of associated volcanic and sedimentary units of the southern Kenya rift. In the principal exposures along the southern edge of the Legemunge Plain, the formation spans the interval from approximately 500 to 1,000 ka. Deposition continued to the east along the Ol Keju Nyiro river where a tuff near the top of the formation has been dated at 215 ka. In these exposures, the formation is unconformably overlain by sediments dated at 49 ka. A possible source for the Olorgesailie tephra, the Ol Doinyo Nyokie volcanic complex, contains as ash flow dated at {approximately} 1 Ma, extending the known age range of this complex to encompass that of virtually the entire Olorgesailie Formation in the Legemunge Plain. These geologic examples illustrate the importance of the single-crystal {sup 40}Ar/{sup 39}Ar dating technique whereby contaminant, altered, or otherwise aberrant grains can be identified and eliminated from the determination of eruptive ages for reworked or altered pyroclastic deposits. The authors have presented a computer-modeling procedure based on an inverse-isochron analysis that promotes a more objective approach to trimming {sup 40}Ar/{sup 39}Ar isotope data sets of this type.

  9. THE STRUCTURE SENSITIVITY OF n-HEPTANE DEHYDROCYCLIZATION AND HYDROGENOLYSIS CATALYZED BY PLATINUM SINGLE CRYSTALS AT ATMOSPHERIC PRESSURE

    SciTech Connect (OSTI)

    Gillespie, W. D.; Herz, R. K.; Petersen, E. E.; Somorjai, G. A.

    1980-09-01T23:59:59.000Z

    The dehydrocyclization and hydrogenolysis of n~heptane catalyzed by platinum single crystal surfaces have been investigated at temperatures from 533 to 603 K in the range of one atmosphere total pressure, The flat (111), stepped (557), and kinked (10,8,7) and (25,10,7) surfaces used tn this study were characterized in ultrahigh vacuum by low energy electron diffraction and Auger electron spectroscopy before and after reaction experiments. The rate of dehydrocyclization to toluene on the four surfaces increased in the order (111) (25,10,7) (557) (10,8,7), Hydrogenolysis, however, increased in the order (557) (10,8,7) (111) (25,10,7), As a result, the selectivity of toluene production versus hydrogenolysis increased by an order of magnitude in the order (25,10,7) (111) (10,8,7) (557). The sum of the rates of hydrogenolysis and toluene production remains relatively constant. The effect of preoxidation of the single crystal catalysts was to increase the rate of hydrogenolysis and decrease the rate of dehydrocyclization, Iri general, the reaction rates decreased with increasing reaction time. This decrease was shown to be the result of the depositon of irreversibly adsorbed carbonaceous species.

  10. Molecular dynamics simulation of self-rotation effects on ultra-precision polishing of single-crystal copper

    SciTech Connect (OSTI)

    Yang, Yihan; Zhao, Hongwei; Zhang, Lin; Shao, Mingkun; Liu, Hongda; Huang, Hu [College of Mechanical Science and Engineering, Jilin University, Renmin Street 5988, Changchun, Jilin 130025 (China)] [College of Mechanical Science and Engineering, Jilin University, Renmin Street 5988, Changchun, Jilin 130025 (China)

    2013-10-15T23:59:59.000Z

    Understanding the behaviors of the material removal mechanism of ultra-precision polishing process has been a critical issue of generating well-formed surface. In order to make clear the abrasive self-rotation effects on material removal at the atomic level, a three-dimensional molecular dynamics (MD) model is conducted to study the mechanics of ultra-precision polishing on single-crystal copper with a diamond abrasive and the effects of abrasive self-rotation velocity and direction. Morse potential energy function and EAM potential energy function are applied to model the copper/diamond and copper/copper interactions, respectively. The simulation results show that the deformation mechanism of single-crystal copper is due to the formation and movement of dislocations in the specimen. In addition, with the increasing of abrasive self-rotation velocity, the deformation mechanism falls from cutting to plowing regimes. The abrasive self-rotation velocity and direction have effects on the morphology and quality of the specimen surface, distribution and evolution of defects under the surface of the specimen. Also, the interatomic force between abrasive and specimen is studied to account for the effects of different polishing conditions.

  11. Synthesis and characterization of low-OH?fluor-chlorapatite: A single-crystal XRD and NMR spectroscopic study

    SciTech Connect (OSTI)

    McCubbin, Francis M.; Mason, Harris E.; Park, Hyunsoo; Phillips, Brian L.; Parise, John B.; Nekvasil, Hanna; Lindsley, Donald H. (SBU)

    2008-12-12T23:59:59.000Z

    Los-OH apatite of the compositional range Ca{sub 4.99-5.06}(PO{sub 4}){sub 2.98-3.00}F{sub 0.51-0.48}Cl{sub 0.38-0.36}OH{sub 0.14-0.12} was synthesized and characterized structurally by synchrotron-based single-crystal X-ray diffraction (XRD), and multiple nuclear magnetic resonance (NMR) spectroscopic techniques. the average structure is hexagonal with space group P6{sub 3}/m. The presence of scattering in the single-crystal diffraction data set, which is incommensurate within the average hexagonal structure, suggests the presence of localized short-range monoclinic domains. Complex lineshapes in the {sup 31}P and {sup 19}F MAS NMR spectra are also consistent with the presence of an incommensurate phase. No evidence was detected for splitting of the Ca2 site into two distinct sites (as had been previously reported for hexagonal ternary apatities). Structure refinement and {sup 19}F{l_brace}{sup 35}Cl{r_brace} TRAPDOR NMR experiments verified intercolumnal neighboring of F and Cl atoms (inter-column distance of 2.62 {angstrom}) within this low-OH{sup -} apatite suggesting that long-range neighboring of F and Cl within the apatite anion channels is feasible.

  12. Mid- and Far-Infrared Reflection/Absorption Spectroscopy (IRAS) Studies of NO on Rh Single Crystal Surfaces

    SciTech Connect (OSTI)

    Peden, Charles HF; He, Ting; Pilling, M.; Hirschmugl, Carol J.; Gardner, P.

    2001-02-01T23:59:59.000Z

    The NO/CO reaction over Rh metal in automobile catalytic converters is critical to the control of emissions of these pollutant molecules. As part of a program to determine the elementary mechanism(s) of this reaction, we have been performing mid- and far-infrared reflection/absorption spectroscopic (IRAS) measurements of the adsorption and co-adsorption and co-adsorption of NO and CO on Rh single crystal surfaces. Of particular interest is the low-frequency range of the IRAS spectra where we hoped to observe features due to metal-N stretching and/or bending vibrational motions. In particular, we hoped to obtain information regarding the site-requirements for the dissociation of the NO molecule on various Rh single crystal surfaces. An important result from our earlier work is that the selectivity of the reaction for the two nitrogen-containing products, N2 and N2O, is a strong function of the Rh surface structure. On the basis of ancillary data, we suggested that the location of adsorbed NO and N-atoms (formed from dissociation of adsorbed NO) on various Rh surfaces could, perhaps account for the selectivity differences.

  13. 4765Federal Register / Vol. 77, No. 20 / Tuesday, January 31, 2012 / Notices 1 See Crystalline Silicon Photovoltaic Cells,

    E-Print Network [OSTI]

    Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China

  14. Evaluation of the dosimetric properties of a synthetic single crystal diamond detector in high energy clinical proton beams

    SciTech Connect (OSTI)

    Mandapaka, A. K.; Ghebremedhin, A.; Patyal, B. [Department of Radiation Medicine, Loma Linda University Medical Center, 11234 Anderson Street, Loma Linda, California 92354 (United States)] [Department of Radiation Medicine, Loma Linda University Medical Center, 11234 Anderson Street, Loma Linda, California 92354 (United States); Marinelli, Marco; Prestopino, G.; Verona, C.; Verona-Rinati, G. [INFN–Dipartimento di Ingegneria Industriale, Università di Roma ‘Tor Vergata’, Via del Politecnico 1, 00133 Roma (Italy)] [INFN–Dipartimento di Ingegneria Industriale, Università di Roma ‘Tor Vergata’, Via del Politecnico 1, 00133 Roma (Italy)

    2013-12-15T23:59:59.000Z

    Purpose: To investigate the dosimetric properties of a synthetic single crystal diamond Schottky diode for accurate relative dose measurements in large and small field high-energy clinical proton beams.Methods: The dosimetric properties of a synthetic single crystal diamond detector were assessed by comparison with a reference Markus parallel plate ionization chamber, an Exradin A16 microionization chamber, and Exradin T1a ion chamber. The diamond detector was operated at zero bias voltage at all times. Comparative dose distribution measurements were performed by means of Fractional depth dose curves and lateral beam profiles in clinical proton beams of energies 155 and 250 MeV for a 14 cm square cerrobend aperture and 126 MeV for 3, 2, and 1 cm diameter circular brass collimators. ICRU Report No. 78 recommended beam parameters were used to compare fractional depth dose curves and beam profiles obtained using the diamond detector and the reference ionization chamber. Warm-up/stability of the detector response and linearity with dose were evaluated in a 250 MeV proton beam and dose rate dependence was evaluated in a 126 MeV proton beam. Stem effect and the azimuthal angle dependence of the diode response were also evaluated.Results: A maximum deviation in diamond detector signal from the average reading of less than 0.5% was found during the warm-up irradiation procedure. The detector response showed a good linear behavior as a function of dose with observed deviations below 0.5% over a dose range from 50 to 500 cGy. The detector response was dose rate independent, with deviations below 0.5% in the investigated dose rates ranging from 85 to 300 cGy/min. Stem effect and azimuthal angle dependence of the diode signal were within 0.5%. Fractional depth dose curves and lateral beam profiles obtained with the diamond detector were in good agreement with those measured using reference dosimeters.Conclusions: The observed dosimetric properties of the synthetic single crystal diamond detector indicate that its behavior is proton energy independent and dose rate independent in the investigated energy and dose rate range and it is suitable for accurate relative dosimetric measurements in large as well as in small field high energy clinical proton beams.

  15. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

    SciTech Connect (OSTI)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

    2013-12-04T23:59:59.000Z

    The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

  16. A 31?T split-pair pulsed magnet for single crystal x-ray diffraction at low temperature

    SciTech Connect (OSTI)

    Duc, F.; Frings, P.; Nardone, M.; Billette, J.; Zitouni, A.; Delescluse, P.; Béard, J.; Nicolin, J. P.; Rikken, G. L. J. A. [Laboratoire National des Champs Magnétiques Intenses, CNRS-INSA-UJF-UPS, 143, avenue de Rangueil, F-31400 Toulouse (France); Fabrèges, X. [Laboratoire National des Champs Magnétiques Intenses, CNRS-INSA-UJF-UPS, 143, avenue de Rangueil, F-31400 Toulouse (France); Laboratoire Léon Brillouin, UMR12 CEA-CNRS Bât 563 CEA Saclay, 91191 Gif sur Yvette Cedex (France); Roth, T. [European Synchrotron Radiation Facility, Boîte Postale 220, F-38043 Grenoble Cedex (France); European XFEL GmbH, Albert-Einstein-Ring 19, D-22761 Hamburg (Germany); Detlefs, C.; Lesourd, M.; Zhang, L. [European Synchrotron Radiation Facility, Boîte Postale 220, F-38043 Grenoble Cedex (France)

    2014-05-15T23:59:59.000Z

    We have developed a pulsed magnet system with panoramic access for synchrotron x-ray diffraction in magnetic fields up to 31?T and at low temperature down to 1.5?K. The apparatus consists of a split-pair magnet, a liquid nitrogen bath to cool the pulsed coil, and a helium cryostat allowing sample temperatures from 1.5 up to 250?K. Using a 1.15?MJ mobile generator, magnetic field pulses of 60?ms length were generated in the magnet, with a rise time of 16.5?ms and a repetition rate of 2 pulses/h at 31?T. The setup was validated for single crystal diffraction on the ESRF beamline ID06.

  17. Insulating and metallic spin glass in Ni-doped K x Fe 2 - y Se 2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Abeykoon, Milinda; Wang, Kefeng; Lei, Hechang; Lazarevic, N.; Warren, J. B.; Bozin, E. S.; Popovic, Z. V.; Petrovic, C.

    2015-05-01T23:59:59.000Z

    We report electron doping effects by Ni in KxFe2-?-yNiySe?(0.06?y?1.44) single-crystal alloys. A rich ground-state phase diagram is observed. A small amount of Ni (~4%) suppressed superconductivity below 1.8 K, inducing insulating spin-glass magnetic ground state for higher Ni content. With further Ni substitution, metallic resistivity is restored. For high Ni concentration in the lattice the unit cell symmetry is high symmetry I4/mmm with no phase separation whereas both I4/m+I4/mmm space groups were detected in the phase separated crystals when concentration of Ni < Fe. The absence of superconductivity coincides with the absence of crystalline Fe vacancy order.

  18. Insulating and metallic spin glass in Ni-doped KxFe2-ySe? single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Abeykoon, Milinda; Wang, Kefeng; Lei, Hechang; Lazarevic, N.; Warren, J. B.; Bozin, E. S.; Popovic, Z. V.; Petrovic, C.

    2015-05-01T23:59:59.000Z

    We report electron doping effects by Ni in KxFe2???yNiySe? (0.06 ? y ? 1.44) single crystal alloys. A rich ground state phase diagram is observed. A small amount of Ni (~ 4%) suppressed superconductivity below 1.8 K, inducing insulating spin glass magnetic ground state for higher Ni content. With further Ni substitution, metallic resistivity is restored. For high Ni concentration in the lattice the unit cell symmetry is high symmetry I4/mmm with no phase separation whereas both I4/m + I4/mmm space groups were detected in the phase separated crystals when concentration of Ni more »with the absence of crystalline Fe vacancy order.« less

  19. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    SciTech Connect (OSTI)

    Fisher, Ian Randal

    2012-05-08T23:59:59.000Z

    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  20. Effects of composition and temperature on the large field behavior of [011]{sub C} relaxor ferroelectric single crystals

    SciTech Connect (OSTI)

    Gallagher, John A.; Lynch, Christopher S., E-mail: cslynch@seas.ucla.edu [Department of Mechanical and Aerospace Engineering, University of California Los Angeles, 420 Westwood Plaza, Los Angeles, California 90095 (United States); Tian, Jian [H. C. Materials Corporation, 479 Quadrangle Dr., Suite-E, Bolingbrook, Illinois 60440 (United States)

    2014-08-04T23:59:59.000Z

    The large field behavior of [011]{sub C} cut relaxor ferroelectric lead indium niobate–lead magnesium niobate–lead titanate, xPb(In{sub 1/2}Nb{sub 1/2})O{sub 3}-(1-x-y)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-yPbTiO{sub 3}, single crystals was experimentally characterized in the piezoelectric d{sub 322}-mode configuration under combined mechanical, electrical, and thermal loading. Increasing the concentration of lead indium niobate and decreasing the concentration of lead titanate in compositions near the morphotropic phase boundary resulted in a decrease of mechanical compliance, dielectric permittivity, and piezoelectric coefficients as well as a shift from a continuous to a discontinuous transformation.

  1. Growth, structural and optical characterization of L-histidine 4-nitrophenolate (LHPNP) single crystals for NLO applications

    SciTech Connect (OSTI)

    Mahadevan, M., E-mail: devanphysics@gmail.com [Department of Physics, Adhiparasakthi Engineering College, Melmaruvathur - 603319 (India); Ramachandran, K., E-mail: ramach76@yahoo.com [Department of Physics, SRM University - Vadapalani Campus, Chennai -600026 (India); Anandan, P., E-mail: anandantcet@gmail.com [Department of Physics, Thiruvalluvar College of Engineering and Technology, Vandavasi-604 505, India and Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu 432-8011 (Japan); Arivanandhan, M., E-mail: arivucz@gmail.com, E-mail: royhaya@ipc.shizuoka.ac.jp; Hayakawa, Y., E-mail: arivucz@gmail.com, E-mail: royhaya@ipc.shizuoka.ac.jp [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu 432-8011 (Japan)

    2014-10-15T23:59:59.000Z

    Using slow evaporation solution growth technique, single crystals of L-histidine-4-nitro phenolate has been grown from the solution. Structural analyses were carried out by powder x-ray diffraction, FT-Raman, Fourier Transform Infrared and Nuclear Magnetic Resonance spectral methods to conform the grown crystals. Thermal stability of the grown crystals was studied by thermo-gravimetric (TG) and differential thermal analyses (DTA). UV-Vis spectral analysis has been carried out to find the transparency of the grown crystal. Nonlinear optical property has been confirmed by Kurtz powder technique. The PL measurements were carried out in Perkin Elmer LS 55 Luminescence spectrometer using 410 nm as excitation wavelength. The observed properties have confirmed that the grown crystal is suitable for nonlinear optical applications.

  2. Synthesis and single crystal x-ray diffraction study of a Schiff base derived from 4-acylpyrazolone and 2-aminophenol

    SciTech Connect (OSTI)

    Sharma, Naresh; Kant, Rajni, E-mail: vivek-gupta2k2@hotmail.com; Gupta, Vivek K., E-mail: vivek-gupta2k2@hotmail.com [Department of Physics and Electronics, University of Jammu, Jammu Tawi - 180006 (India); Jadeja, R. N. [Department of Chemistry, Faculty of Science, The M. S. University of Baroda, Vadodara-390002 (India)

    2014-04-24T23:59:59.000Z

    The title compound, (Z)-1-(3-chlorophenyl)-4[1((2hydroxyphenyl)amino)propylidene] -3-methyl-1H-pyrazol-5(4H)-one was synthesized by refluxing compound 1-(m-chlorophenyl)-3-methyl-4-propionyl-5-pyrazolone, with 2-aminophenol in ethanol. The compound crystallizes in the orthorhombic crystal system with space group Pca2{sub 1} having unit cell parameters: a = 26.2993(8), b = 7.0724(2) and c = 18.7170(5)Å. The structure contains two crystallographically independent molecules, A, and, B, in the asymmetric unit cell. The crystal structure was solved by direct method using single crystal X-ray diffraction data collected at room temperature and refined by full-matrix least-squares procedures to a final R- value of 0.049 for 5207 observed reflections.

  3. Single-crystal epitaxial thin films of SrFeO{sub 2} with FeO{sub 2} 'infinite layers'

    SciTech Connect (OSTI)

    Inoue, Satoru; Kawai, Masanori; Shimakawa, Yuichi [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Mizumaki, Masaichiro; Kawamura, Naomi [Japan Synchrotron Radiation Research Institute/SPring-8, Sayo, Hyogo 679-5198 (Japan); Watanabe, Takashi; Tsujimoto, Yoshihiro; Kageyama, Hiroshi; Yoshimura, Kazuyoshi [Department of Chemistry, Graduate School of Science, Kyoto University, Sakyo, Kyoto 606-8502 (Japan)

    2008-04-21T23:59:59.000Z

    Single-crystal thin films of SrFeO{sub 2}, which is an oxygen-deficient perovskite with ''infinite layers'' of Fe{sup 2+}O{sub 2}, were prepared by using CaH{sub 2} for low-temperature reduction of epitaxial SrFeO{sub 2.5} single-crystal films deposited on KTaO{sub 3} substrates. This reduction process, removing oxygen ions from the perovskite structure framework and causing rearrangements of oxygen ions, topotactically transforms the brownmillerite SrFeO{sub 2.5} to the c-axis oriented SrFeO{sub 2}.

  4. Mounting a thermocouple of type E onto a Cu single crystal for use in a magnetically sensitive environment below 77?K

    SciTech Connect (OSTI)

    Potzuweit, Alexander; Schaffner, Anuschka; Jänsch, Heinz Julius, E-mail: heinz.jaensch@physik.uni-marburg.de [Fachbereich Physik, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

    2014-09-01T23:59:59.000Z

    Type E thermocouples show magnetic effects at liquid nitrogen temperature and below. This may cause trouble in experiments that are sensitive to magnetic stray fields like nuclear magnetic resonance, photoemission or high resolution electron energy loss spectroscopy. Here, a solution for the temperature measurement of a single crystal is presented. The authors weld a copper rod onto the back side of the single crystal, thereby relocating the sensitive sample from the thermocouple attachment position. They show that it is possible to measure the crystal temperature at the end of the rod while significantly reducing the ferromagnetic influence due to the increased distance.

  5. High-pressure single-crystal elasticity study of CO{sub 2} across phase I-III transition

    SciTech Connect (OSTI)

    Zhang, Jin S., E-mail: zhang72@illinois.edu; Bass, Jay D. [Department of Geology, University of Illinois, Urbana-Champaign, Illinois 61801 (United States); Shieh, Sean R. [Departments of Earth Sciences and Physics and Astronomy, University of Western Ontario, London, Ontario N6A 5B7 (Canada); Dera, Przemyslaw [Hawaii Institute of Geophysics and Planetology, University of Hawaii at Manoa, Honolulu, Hawaii 96822 (United States); Prakapenka, Vitali [Center for Advanced Radiation Sources, University of Chicago, Chicago, Illinois 60637 (United States)

    2014-04-07T23:59:59.000Z

    Sound velocities and elastic moduli of solid single-crystal CO{sub 2} were measured at pressures up to 11.7(3) GPa by Brillouin spectroscopy. The aggregate adiabatic bulk modulus (K{sub S}), shear modulus (G), and their pressure derivatives for CO{sub 2} Phase I are K{sub S0}?=?3.4(6) GPa, G{sub 0}?=?1.8(2) GPa, (dK{sub S}/dP){sub 0}?=?7.8(3), (dG/dP){sub 0}?=?2.5(1), (d{sup 2}K{sub S}/dP{sup 2}){sub 0}?=??0.23(3) GPa{sup ?1}, and (d{sup 2}G/dP{sup 2}){sub 0}?=??0.10(1) GPa{sup ?1}. A small increase of elastic properties was observed between 9.8(1) and 10.5(3) GPa, in agreement with the CO{sub 2} I-III transition pressure determined from previous x-ray diffraction experiments. Above the transition pressure P{sub T}, we observed a mixture dominated by CO{sub 2}-I, with minor CO{sub 2}-III. The CO{sub 2}-I + III mixture shows slightly increased sound velocities compared to pure CO{sub 2}-I. Elastic anisotropy calculated from the single-crystal elasticity tensor exhibits a decrease with pressure beginning at 7.9(1) GPa, which is lower than P{sub T}. Our results coincide with recent X-ray Raman observations, suggesting that a pressure-induced electronic transition is related to local structural and optical changes.

  6. Piezoelectric and ferroelectric properties of lead-free niobium-rich potassium lithium tantalate niobate single crystals

    SciTech Connect (OSTI)

    Li, Jun, E-mail: lijuna@hit.edu.cn [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Li, Yang [Department of chemistry, Harbin Institute of Technology, Harbin 150001 (China); Zhou, Zhongxiang [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Guo, Ruyan; Bhalla, Amar S. [Multifunctional Electronic Materials and Device Research Lab, Department of Electrical and Computer Engineering, The University of Texas at San Antonio, San Antonio 78249 (United States)

    2014-01-01T23:59:59.000Z

    Graphical abstract: - Highlights: • Lead-free K{sub 0.95}Li{sub 0.05}Ta{sub 1?x}Nb{sub x}O{sub 3} single crystals were grown using the top-seeded melt growth method. • The piezoelectric and ferroelectric properties of as-grown crystals were systematically investigated. • The piezoelectric properties are very attractive, e.g. for x = 0.60 composition, k{sub t} ? 70%, k{sub 31} ? 70%, k{sub 33} ? 77%, d{sub 31} ? 230 pC/N, d{sub 33} ? 600 pC/N. • The coercive fields of P–E hysteresis loops are quite small, about or less than 1 kV/mm. - Abstract: Lead-free potassium lithium tantalate niobate single crystals with the composition of K{sub 0.95}Li{sub 0.05}Ta{sub 1?x}Nb{sub x}O{sub 3} (abbreviated as KLTN, x = 0.51, 0.60, 0.69, 0.78) were grown using the top-seeded melt growth method. Their piezoelectric and ferroelectric properties in as-grown crystals have been systematically investigated. The phase transitions and Curie temperatures were determined from dielectric and pyroelectric measurements. Piezoelectric coefficients and electromechanical coupling factors in thickness mode, length-extensional mode and longitudinal mode were obtained. The piezoelectric properties are very attractive, e.g. for x = 0.60 composition, k{sub t} ? 70%, k{sub 31} ? 70%, k{sub 33} ? 77%, d{sub 31} ? 230 pC/N, d{sub 33} ? 600 pC/N are comparable to the lead-based PZT composition. The polarization versus electric field hysteresis loops show saturated shapes. In short, lead-free niobium-rich KLTN system possesses comparable properties to those in important lead-based piezoelectric material nowadays.

  7. Laser-induced damage threshold of silicon in millisecond, nanosecond, and picosecond regimes

    SciTech Connect (OSTI)

    Wang, X.; Shen, Z. H.; Lu, J.; Ni, X. W. [School of Science, Nanjing University of Science and Technology, Nanjing 210094 (China)

    2010-08-15T23:59:59.000Z

    Millisecond, nanosecond, and picosecond laser pulse induced damage thresholds on single-crystal are investigated in this study. The thresholds of laser-induced damage on silicon are calculated theoretically for three pulse widths based on the thermal damage model. An axisymmetric mathematical model is established for the transient temperature field of the silicon. Experiments are performed to test the damage thresholds of silicon at various pulse widths. The results indicate that the damage thresholds obviously increase with the increasing of laser pulse width. Additionally, the experimental results agree well with theoretical calculations and numerical simulation results.

  8. Stretchable silicon could be next wave in electronics http://www.physorg.com/news9110.html 1 of 3 12/21/2005 6:04 PM

    E-Print Network [OSTI]

    Rogers, John A.

    ://www.physorg.com/news9110.html 2 of 3 12/21/2005 6:04 PM global warming,,somethings forgotten last post by adoucette How, mechanical and electrical uses Image: Scanning electron micrograph of 'wavy' single crystal silicon ribbons sales pitches by participating. Products & SuppliersProducts & Suppliers Schematic illustration

  9. Proc. IEEE Workshop on Micro Electro Mechanical Structures (MEMS), San Diego, CA, February 1996. SINGLECRYSTAL SILICON ACTUATOR ARRAYS FOR MICRO MANIPULATION TASKS

    E-Print Network [OSTI]

    Donald, Bruce Randall

    Proc. IEEE Workshop on Micro Electro Mechanical Structures (MEMS), San Diego, CA, February 1996. SINGLE­CRYSTAL SILICON ACTUATOR ARRAYS FOR MICRO MANIPULATION TASKS Karl­Friedrich B¨ohringer Bruce and Department of Computer Science Cornell Nanofabrication Facility Cornell University, Ithaca, NY 14853 URL http://www.cs.cornell.edu/Info/People/karl/Micro

  10. Electrical resistivity and thermopower of single-crystal RNi2B2C (R=Dy, Ho, Er, Tm) magnetic superconductors

    E-Print Network [OSTI]

    Bhatnagar, AK; Rathnayaka, KDD; Naugle, Donald G.; Canfield, PC.

    1997-01-01T23:59:59.000Z

    The in-plane resistivity rho and thermopower S of single crystal RNi2B2C (R=Dy, Ho, Er, Tm) has been measured from 4 to 300 K. The resistivity is linear in temperature from about 100 to 300 K, but the low-temperature dependence goes as T-p With p...

  11. Interaction of wide-band-gap single crystals with 248-nm excimer laser radiation. XI. The effect of water vapor and temperature on laser desorption

    E-Print Network [OSTI]

    Dickinson, J. Thomas

    . Significantly, introducing water vapor lowers the particle velocities and thus the effective surface temperature systems, simultaneous electronic excitation and exposure to aggressive chemicals can acceler- ate etching-induced neutral particle desorption and surface erosion on single- crystal sodium chloride in the presence of low

  12. PHYSICAL REVIEW B 83, 104526 (2011) Fe Mossbauer study of magnetic ordering in superconducting K0.80Fe1.76Se2.00 single crystals

    E-Print Network [OSTI]

    Ryan, Dominic

    2011-01-01T23:59:59.000Z

    PHYSICAL REVIEW B 83, 104526 (2011) 57 Fe M¨ossbauer study of magnetic ordering in superconducting 31 March 2011) The magnetic ordering of superconducting single crystals of K0.80Fe1.76Se2.00 has been studied between 10 and 550 K using 57 Fe M¨ossbauer spectroscopy. Despite being superconducting below Tsc

  13. JOURNAL DE PHYSIQUE Colloque C6, supplbment au no 8, Tome 39, aofit 1978, page C6-635 FLUX DENSITY GRADIENTS IN PLASTICALLY DEFORMED NIOBIUM SINGLE CRYSTALS

    E-Print Network [OSTI]

    Boyer, Edmond

    GRADIENTS IN PLASTICALLY DEFORMED NIOBIUM SINGLE CRYSTALS H.U. Habermeier, W. Klein and H. Kronmiiller de Shubnikov dans des monocristaux d niobium dGformds plastiquement. L'anisotropie de l'inter- action of the Faraday magneto-optical technique the penetration of the Shubnikov phase into plastically deformed niobium

  14. Anisotropic magnetoresistance of single-crystal HoNi2B2C and the interplay of magnetic and superconducting order

    E-Print Network [OSTI]

    Rathnayaka, KDD; Naugle, Donald G.; Cho, BK; Canfield, PC.

    1996-01-01T23:59:59.000Z

    The in-plane resistivity and magnetization measurements as a function of the magnitude and direction of the magnetic field and the temperature are reported for single-crystal samples of the HoNi2B2C magnetic superconductor. Features corresponding...

  15. JOURNAL DE PHYSIQUE Colloque C 3, supplkment au no 7-8, Tome 27, juilbet-aodt 1966, page C 3-193 THE PLASTICITY OF PURE NIOBIUM SINGLE CRYSTALS

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    -193 THE PLASTICITY OF PURE NIOBIUM SINGLE CRYSTALS M. S. DUESBERY,R. A. FOXALLand P. B. HIRSCH Cavendish Laboratory, University of Cambridge. R6sumb. - On ktudie la dkformation de monocristaux de niobium purifiks par recuit of single crystals of niobium purified by annealing in ultra-high vacua is studied. The stress-strain curves

  16. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09T23:59:59.000Z

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  17. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    SciTech Connect (OSTI)

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01T23:59:59.000Z

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  18. Lossless intensity modulation in integrated photonics

    E-Print Network [OSTI]

    Fan, Shanhui

    volume silicon mi- croring modulator," Opt. Express 18, 18235­18242 (2010). 12. A. Yariv, "Critical modulators," Nat. Photonics 4, 518­526 (2010). 2. A. Liu, R. Jones, L. Liao, D. Samara-Rubio1, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, "A high-speed silicon optical modulator based on a metal

  19. A statistical model approximation for perovskite solid-solutions: a Raman study of lead-zirconate- titanate single crystal

    SciTech Connect (OSTI)

    Frantti, Johannes [Aalto University, Finland; Fujioka, Y [Aalto University, Finland; Puretzky, Alexander A [ORNL; Xie, Y [Simon Fraser University, Canada; Glazer, A [Clarendon Laboratory, Department of Physics, University of Oxford

    2013-01-01T23:59:59.000Z

    Lead titanate (PbTiO3) is a classical example of a ferroelectric perovskite oxide illustrating a displacive phase transition accompanied by a softening of a symmetry-breaking mode. The underlying assumption justifying the soft-mode theory is that the crystal is macroscopically sufficiently uniform so that a meaningful free energy function can be formed. In contrast to PbTiO3, experimental studies show that the phase transition behaviour of lead-zirconate-titanate solid solution (PZT) is far more subtle. Most of the studies on the PZT system have been dedicated to ceramic or powder samples, in which case an unambiguous soft-mode study is not possible, as modes with different symmetries appear together. Our Raman scattering study on titanium-rich PZT single crystal shows that the phase transitions in PZT cannot be described by a simple soft-mode theory. In strong contrast to PbTiO3, splitting of transverse E-symmetry modes reveals that there are different locally-ordered regions. The role of crystal defects, random distribution of Ti and Zr at the B- cation site and Pb ions shifted away from their ideal positions, dictates the phase transition mechanism. A statistical model explaining the observed peak splitting and phase transformation to a complex state with spatially varying local order in the vicinity of the morphotropic phase boundary is given.

  20. Superconducting gap evolution in overdoped BaFe?(As1-xPx)? single crystals through nanocalorimetry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Campanini, D.; Diao, Z.; Fang, L.; Kwok, W.-K.; Welp, U.; Rydh, A.

    2015-06-01T23:59:59.000Z

    We report on specific heat measurements on clean overdoped BaFe?(As1-xPx)? single crystals performed with a high resolution membrane-based nanocalorimeter. A nonzero residual electronic specific heat coefficient at zero temperature ?r=C/T|T?0 is seen for all doping compositions, indicating a considerable fraction of the Fermi surface ungapped or having very deep minima. The remaining superconducting electronic specific heat is analyzed through a two-band s-wave ? model in order to investigate the gap structure. Close to optimal doping we detect a single zero-temperature gap of ??~5.3 me V, corresponding to ??/kBTc ~ 2.2. Increasing the phosphorus concentration x, the main gap reduces tillmore »a value of ?? ~ 1.9 meV for x = 0.55 and a second weaker gap becomes evident. From the magnetic field effect on ?r, all samples however show similar behavior [?r(H) - ?r (H = 0)? Hn, with n between 0.6 and 0.7]. This indicates that, despite a considerable redistribution of the gap weights, the total degree of gap anisotropy does not change drastically with doping.« less

  1. Radiation damage by light- and heavy-ion bombardment of single-crystal LiNbO?

    SciTech Connect (OSTI)

    Huang, Hsu-Cheng [Columbia Univ., New York, NY (United States); Zhang, Lihua [Brookhaven National Lab. (BNL), Upton, NY (United States); Malladi, Girish [SUNY Polytechnic Inst., Albany, NY (United States); Dadap, Jerry I. [Columbia Univ., New York, NY (United States); Manandhar, Sandeep [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kisslinger, Kim [Brookhaven National Lab. (BNL), Upton, NY (United States); Vemuri, Rama Sesha R. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Shutthanandan, Vaithiyalingam [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Bakhru, Hassaram [SUNY Polytechnic Inst., Albany, NY (United States); Osgood, Jr., Richard M. [Columbia Univ., New York, NY (United States)

    2015-01-01T23:59:59.000Z

    In this work, a battery of analytical methods including in situ RBS/C, confocal micro-Raman, TEM/STEM, EDS, AFM, and optical microscopy were used to provide a comparative investigation of light- and heavy-ion radiation damage in single-crystal LiNbO?. High (~MeV) and low (~100s keV) ion energies, corresponding to different stopping power mechanisms, were used and their associated damage events were observed. In addition, sequential irradiation of both ion species was also performed and their cumulative depth-dependent damage was determined. It was found that the contribution from electronic stopping by high-energy heavy ions gave rise to a lower critical fluence for damage formation than for the case of low-energy irradiation. Such energy-dependent critical fluence of heavy-ion irradiation is two to three orders of magnitude smaller than that for the case of light-ion damage. In addition, materials amorphization and collision cascades were seen for heavy-ion irradiation, while for light ion, crystallinity remained at the highest fluence used in the experiment. The irradiation-induced damage is characterized by the formation of defect clusters, elastic strain, surface deformation, as well as change in elemental composition. In particular, the presence of nanometric-scale damage pockets results in increased RBS/C backscattered signal and the appearance of normally forbidden Raman phonon modes. The location of the highest density of damage is in good agreement with SRIM calculations. (author)

  2. Superconducting gap evolution in overdoped BaFe?(As1-xPx)? single crystals through nanocalorimetry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Campanini, D.; Diao, Z.; Fang, L.; Kwok, W.-K.; Welp, U.; Rydh, A.

    2015-06-01T23:59:59.000Z

    We report on specific heat measurements on clean overdoped BaFe?(As1-xPx)? single crystals performed with a high resolution membrane-based nanocalorimeter. A nonzero residual electronic specific heat coefficient at zero temperature ?r=C/T|T?0 is seen for all doping compositions, indicating a considerable fraction of the Fermi surface ungapped or having very deep minima. The remaining superconducting electronic specific heat is analyzed through a two-band s-wave ? model in order to investigate the gap structure. Close to optimal doping we detect a single zero-temperature gap of ??~5.3 me V, corresponding to ??/kBTc ~ 2.2. Increasing the phosphorus concentration x, the main gap reduces till a value of ?? ~ 1.9 meV for x = 0.55 and a second weaker gap becomes evident. From the magnetic field effect on ?r, all samples however show similar behavior [?r(H) - ?r (H = 0)? Hn, with n between 0.6 and 0.7]. This indicates that, despite a considerable redistribution of the gap weights, the total degree of gap anisotropy does not change drastically with doping.

  3. Single-crystal structure of vanadium-doped La{sub 2}Mo{sub 2}O{sub 9}

    SciTech Connect (OSTI)

    Alekseeva, O. A., E-mail: olalex@ns.crys.ras.ru; Antipin, A. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)] [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Gagor, A.; Pietraszko, A. [Polish Academy of Sciences, Trzebiatowski Institute of Low Temperature and Structure Research (Poland)] [Polish Academy of Sciences, Trzebiatowski Institute of Low Temperature and Structure Research (Poland); Novikova, N. E.; Sorokina, N. I. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)] [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Kharitonova, E. P.; Voronkova, V. I. [Moscow State University (Russian Federation)] [Moscow State University (Russian Federation)

    2013-11-15T23:59:59.000Z

    A high-precision X-ray diffraction study of single crystals of two compositions-La{sub 2}Mo{sub 1.78}V{sub 0.22}O{sub 8.89} and La{sub 2}Mo{sub 1.64}V{sub 0.36}O{sub 8.82}-was performed. In the vanadium-doped compounds, as in the structure of the metastable {beta}{sub ms} phase of pure La{sub 2}Mo{sub 2}O{sub 9}, the La and Mo atoms and one of the three oxygen atoms are displaced from the threefold axis, on which they are located in the high-temperature {beta} phase. The structure contains two partially occupied oxygen sites. It was shown that molybdenum atoms are partially replaced by vanadium atoms, which are not involved in the disordering, are located on the threefold axis, and are shifted toward one of the oxygen atoms. This is consistent with the temperature-induced changes in the structure of La{sub 2}Mo{sub 2}O{sub 9} and the changes in the properties of these crystals caused by the introduction of vanadium atoms into the structure.

  4. Single-crystal sapphire resonator at millikelvin temperatures: Observation of thermal bistability in high-Q factor whispering gallery modes

    SciTech Connect (OSTI)

    Creedon, Daniel L.; Tobar, Michael E.; Le Floch, Jean-Michel; Reshitnyk, Yarema; Duty, Timothy [School of Physics (M013), University of Western Australia, 35 Stirling Hwy, Crawley, Western Australia 6009 (Australia); School of Mathematics and Physics, University of Queensland, St. Lucia, Queensland 4072 (Australia)

    2010-09-01T23:59:59.000Z

    Resonance modes in single crystal sapphire ({alpha}-Al{sub 2}O{sub 3}) exhibit extremely high electrical and mechanical Q factors ({approx_equal}10{sup 9} at 4 K), which are important characteristics for electromechanical experiments at the quantum limit. We report the cool down of a bulk sapphire sample below superfluid liquid-helium temperature (1.6 K) to as low as 25 mK. The electromagnetic properties were characterized at microwave frequencies, and we report the observation of electromagnetically induced thermal bistability in whispering gallery modes due to the material T{sup 3} dependence on thermal conductivity and the ultralow dielectric loss tangent. We identify ''magic temperatures'' between 80 and 2100 mK, the lowest ever measured, at which the onset of bistability is suppressed and the frequency-temperature dependence is annulled. These phenomena at low temperatures make sapphire suitable for quantum metrology and ultrastable clock applications, including the possible realization of the quantum-limited sapphire clock.

  5. System and method for liquid silicon containment

    SciTech Connect (OSTI)

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2014-06-03T23:59:59.000Z

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  6. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2013-05-28T23:59:59.000Z

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  7. Evaluation of the intrinsic magneto-dielectric coupling in LaMn{sub 0.5}Co{sub 0.5}O{sub 3} single crystals

    SciTech Connect (OSTI)

    Manna, Kaustuv; Elizabeth, Suja; Anil Kumar, P. S. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India); Joshi, Rajeev S. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India); Department of Physics, Central University of Karnataka, Gulbarga 585106 (India)

    2014-05-19T23:59:59.000Z

    The magneto-dielectric coupling in (l00) oriented LaMn{sub 0.5}Co{sub 0.5}O{sub 3} single crystals has been investigated using temperature, frequency, and magnetic field dependent dielectric response. Electronic transport data divulges that polaronic hopping arises due to Emin-Holstein adiabatic small polarons. Spin realignment through external magnetic field favors faster polaronic hopping by lowering activation energy for dielectric relaxation. Finally, positive magneto-dielectricity and magnetoloss under increasing magnetic field at high frequency of the exciting ac field confirms intrinsic magneto-dielectric effect in disordered ferromagnetic-insulator LaMn{sub 0.5}Co{sub 0.5}O{sub 3}. This study also emphasizes the need to use single crystals as well as the frequencies higher than the corresponding inverse relaxation time.

  8. Vortex line pinning in Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} single crystals with columnar defects

    SciTech Connect (OSTI)

    van der Beek, C.J.; Vinokur, V.M.; Crabtree, G.W. [Argonne National Lab., IL (United States); Schmidt, B.; Konczykowski, M. [CEA-Ecole Polytechnique, 91 - Palaiseau (France). Lab. d`Etudes des Solides Irradies

    1994-05-01T23:59:59.000Z

    The ac transmittivity of heavy-ion irradiated Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} single crystals shows a sharp cusp as function of the dc field orientation with respect to the columnar defects. This unambiguously demonstrates the connected nature of vortices in these samples. In contrast, the irreversibility line does not reveal a cusp.

  9. Diffuse phase transition from the superionic to non-superionic state in Cu{sub 1.8}Se single crystal

    SciTech Connect (OSTI)

    Bikkulova, N. N.; Stepanov, Yu. M.; Bikkulova, L. V., E-mail: bickulova@mail.ru; Kurbangulov, A. R.; Kutov, A. Kh.; Karagulov, R. F. [Bashkir State University, Sterlitamak Branch (Russian Federation)

    2013-07-15T23:59:59.000Z

    The phase transition from the superionic to non-superionic state in a Cu{sub 1.8}Se single crystal is studied by neutron diffraction. In the superionic state, a diffuse halo related to the disordering of the cation subsystem is observed. It is established that the phase transition from the superionic to non-superionic state is the diffuse first-order phase transition occurring in the temperature range 250-180 K.

  10. Shock wave compression of hexagonal-close-packed metal single crystals: Time-dependent, anisotropic elastic-plastic response of beryllium

    SciTech Connect (OSTI)

    Winey, J. M.; Gupta, Y. M. [Institute for Shock Physics and Department of Physics, Washington State University, Pullman, Washington 99164 (United States)

    2014-07-21T23:59:59.000Z

    Understanding and modeling the response of hcp metals to high stress impulsive loading is challenging because the lower crystal symmetry, compared to cubic metals, results in a significantly more complex material response. To gain insight into the inelastic deformation of hcp metals subjected to high dynamic stresses, shock wave compression of single crystals provides a useful approach because different inelastic deformation mechanisms can be examined selectively by shock compression along different crystal orientations. As a representative example, we report, here, on wave propagation simulations for beryllium (Be) single crystals shocked along the c-axis, a-axis, and several low-symmetry directions to peak stresses reaching 7?GPa. The simulations utilized a time-dependent, anisotropic material model that incorporated dislocation dynamics, deformation twinning, and shear cracking based descriptions of inelastic deformation. The simulation results showed good overall agreement with measured wave profiles for all the different crystal orientations examined [Pope and Johnson, J. Appl. Phys. 46, 720 (1975)], including features arising from wave mode coupling due to the highly anisotropic inelastic response of Be. This good agreement demonstrates that the measured profiles can be understood in terms of dislocation slip along basal, prismatic, and pyramidal planes, together with deformation twinning along (101{sup ¯}2) planes. Our results show that the response of shocked Be single crystals involves the simultaneous operation of multiple, distinct inelastic deformation mechanisms for all orientations except the c-axis. For shocked c-axis Be, the measured wave profiles do not provide good discrimination between pyramidal slip and other inelastic deformation mechanisms, such as shear cracking. The findings presented here provide insight into the complex inelastic deformation response of shocked Be single crystals and are expected to be useful for other hcp crystals. More broadly, the present work demonstrates the potential of shock wave propagation along low-symmetry directions to examine, and discriminate between, different inelastic deformation mechanisms in crystalline solids.

  11. Measurement of the Young's modulus and internal friction of single crystal and polycrystalline copper, and copper-graphite composites as a function of temperature and orientation 

    E-Print Network [OSTI]

    Wickstrom, Steven Norman

    1988-01-01T23:59:59.000Z

    MEASUREMENT OF THE YOUNG'S MODULUS AND INTERNAL FRICTION OF SINGLE CRYSTAL AND POLYCRYSTALLINE COPPER, AND COPPER- GRAPHITE COMPOSITES AS A FUNCTION OF TEMPERATURE AND ORIENTATION A Thesis by S teven Norman Wicks trom Submitted... AND POLYCRYSTALLINE COPPER, AND COPPER- GRAPHITE COMPOSITES AS A FUNCTION OF TEMPERATURE AND ORIENTATION A Thesis by Steven Norman Wickstrom Approved as to style and content by: A(J ~a Alan Wolfenden (Chairman of Committee) Don E. Bray (Member) Donald G...

  12. Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001) J. S. Chawla, X. Y. Zhang, and D. Galla)

    E-Print Network [OSTI]

    Gall, Daniel

    Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001) J. S. Chawla, X. Y.5-nm-thick TiN(001) buffer layer. X-ray diffraction and reflection indicate that the TiN(001) surface continuous Cu layer on MgO. The wet- ting of Cu on TiN is expected to be better, due to the surface energy

  13. On-line spectrophotometric method for monitoring weak residual absorption of CaMoO{sub 4} single crystals near the intrinsic luminescence peak

    SciTech Connect (OSTI)

    Buzanov, O. A., E-mail: fedorov-metrology@yandex.ru [OAO Fomos-Materials (Russian Federation); Kanevskii, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)] [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Kornoukhov, V. N. [OAO Fomos-Materials (Russian Federation)] [OAO Fomos-Materials (Russian Federation); Nabatov, B. V.; Nabatov, V. V.; Fedorov, V. A. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)] [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2013-11-15T23:59:59.000Z

    The optical and spectral characteristics of isotopically enriched Czochralski-grown {sup 40}Ca{sup 100}MoO{sub 4} single crystals have been investigated. This material is promising for detecting double neutrinoless {beta} decay. The possibility and the technique of spectrophotometric monitoring of weak residual absorption near the intrinsic luminescence peak of this scintillation material, which is designed for developing new-generation detectors of elementary particles, are considered.

  14. Dissolution-induced surface modifications and permeability changes associated with fluid flow through an abraded saw-cut in single crystal quartz 

    E-Print Network [OSTI]

    Bowman, James Albert

    1992-01-01T23:59:59.000Z

    DISSOLUTION-INDUCED SURFACE MODIFICATIONS AND PERMEABILITY CHANGES ASSOCIATED WITH FLUID FLOW THROUGH AN ABRADED SAW-CUT IN SINGLE CRYSTAL QUARTZ A Thesis by JAlvlES ALBERT BOWMAN, JR, Submined to the Oflice of Graduate Studies of Texas A8r...M University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE Xiay I992 Major Subject: Geology DISSOLUTION-INDUCED SURFACE MODIFICATIONS AND PERMEABILITY CHANGES ASSOCIATED WITH FLUID FLOW THROUGH AN ABRADED SAW...

  15. Radiation damage by light- and heavy-ion bombardment of single-crystal LiNbO?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Huang, Hsu-Cheng; Zhang, Lihua; Malladi, Girish; Dadap, Jerry I.; Manandhar, Sandeep; Kisslinger, Kim; Vemuri, Rama Sesha R.; Shutthanandan, Vaithiyalingam; Bakhru, Hassaram; Osgood, Jr., Richard M.

    2015-01-01T23:59:59.000Z

    In this work, a battery of analytical methods including in situ RBS/C, confocal micro-Raman, TEM/STEM, EDS, AFM, and optical microscopy were used to provide a comparative investigation of light- and heavy-ion radiation damage in single-crystal LiNbO?. High (~MeV) and low (~100s keV) ion energies, corresponding to different stopping power mechanisms, were used and their associated damage events were observed. In addition, sequential irradiation of both ion species was also performed and their cumulative depth-dependent damage was determined. It was found that the contribution from electronic stopping by high-energy heavy ions gave rise to a lower critical fluence for damage formationmore »than for the case of low-energy irradiation. Such energy-dependent critical fluence of heavy-ion irradiation is two to three orders of magnitude smaller than that for the case of light-ion damage. In addition, materials amorphization and collision cascades were seen for heavy-ion irradiation, while for light ion, crystallinity remained at the highest fluence used in the experiment. The irradiation-induced damage is characterized by the formation of defect clusters, elastic strain, surface deformation, as well as change in elemental composition. In particular, the presence of nanometric-scale damage pockets results in increased RBS/C backscattered signal and the appearance of normally forbidden Raman phonon modes. The location of the highest density of damage is in good agreement with SRIM calculations. (author)« less

  16. High-pressure single-crystal X-ray diffraction of Tl{sub 2}SeO{sub 4}

    SciTech Connect (OSTI)

    Grzechnik, Andrzej [Departamento de Fisica de la Materia Condensada, Universidad del Pais Vasco, E-48080 Bilbao (Spain)], E-mail: andrzej.grzechnik@ehu.es; Breczewski, Tomasz; Friese, Karen [Departamento de Fisica de la Materia Condensada, Universidad del Pais Vasco, E-48080 Bilbao (Spain)

    2008-11-15T23:59:59.000Z

    The effect of pressure on the crystal structure of thallium selenate (Tl{sub 2}SeO{sub 4}) (Pmcn, Z=4), containing the Tl{sup +} cations with electron lone pairs, has been studied with single-crystal X-ray diffraction in a diamond anvil cell up to 3.64 GPa at room temperature. No phase transition has been observed. The compressibility data are fitted by a Murnaghan equation of state with the zero-pressure bulk modulus B{sub 0}=29(1) GPa and the unit-cell volume at ambient pressure V{sub 0}=529.6(8) A{sup 3} (B'=4.00). Tl{sub 2}SeO{sub 4} is the least compressible in the c direction, while the pressure-induced changes of the a and b lattice parameters are quite similar. These observations can be explained by different pressure effects on the nine- and 11-fold coordination polyhedra around the two non-equivalent Tl atoms. The SeO{sub 4}{sup 2-} tetrahedra are not rigid units and become more distorted. Their contribution to the compressibility is small. The effect of pressure on the isotypical oxide materials A{sub 2}TO{sub 4} with the {beta}-K{sub 2}SO{sub 4} structure is discussed. It appears that the presence of electron lone pairs on the Tl{sup +} cation does not seem to influence the compressibility of Tl{sub 2}SeO{sub 4}. - Graphical abstract: Pressure dependence of normalized lattice parameters and unit-cell volumes in Tl{sub 2}SeO{sub 4} (Pmcn, Z=4). The solid line is the Murnaghan equation of state.

  17. A systematic analysis of the spectra of the lanthanides doped into single crystal LaF/sub 3/

    SciTech Connect (OSTI)

    Carnall, W.T.; Goodman, G.L.; Rajnak, K.; Rana, R.S.

    1988-02-01T23:59:59.000Z

    The optical spectra of the lanthanides doped into single crystal LaF/sub 3/ have been interpreted in terms of transitions within 4f/sup N/ configurations. Energy-level calculations were based on a simultaneous diagonalization of the free-ion and crystal-field matrices using an approximate model with C/sub 2v/ site symmetry instead of the actual C/sub 2/ symmetry. Excellent correlations between experimental transition energies and the computed level structures were obtained; predicted levels are given for Pm/sup 3 +/. Previously unpublished experimental results for Nd/sup 3 +/ and Sm/sup 3 +/:LaF/sub 3/ are included in the tabulations. The spectroscopic data for each ion were analyzed independently, then the parameters of the effective-operator model were intercompared and systematic trends were identified. Since many of the 4f/sup N/ configurations extend well into the vacuum ultraviolet region, and thus beyond any presently available experimental observations, some of the free-ion (atomic) parameters were found to be only approximately defined by the accessible levels. However, the crystal-field parameters seem for the most part to be well established by fits to data at low energies. A new chart of the lanthanide ion 4f/sup N/ configuration energy level structures is presented. It was generated by including all of the computed crystal-field levels in the 0-50000 cm/sup -1/ range. In most cases, experimental analyses of individual ions extended to /approximately/40000 cm/sup /minus/1/. 94 refs., 23 figs., 10 tabs.

  18. Synthesis, structure, growth and characterization of a novel organic NLO single crystal: Morpholin-4-ium p-aminobenzoate

    SciTech Connect (OSTI)

    Shanmugam, G. [Department of Physics, Anna University of Technology Tiruchirappalli, Tiruchirappalli 620024 (India)] [Department of Physics, Anna University of Technology Tiruchirappalli, Tiruchirappalli 620024 (India); Ravi Kumar, K.; Sridhar, B. [X-ray Crystallography Division, Indian Institute of Chemical Technology, CSIR, Hyderabad 500007 (India)] [X-ray Crystallography Division, Indian Institute of Chemical Technology, CSIR, Hyderabad 500007 (India); Brahadeeswaran, S., E-mail: sbrag67@yahoo.com [Department of Physics, Anna University of Technology Tiruchirappalli, Tiruchirappalli 620024 (India)

    2012-09-15T23:59:59.000Z

    Highlights: ? A new organic NLO crystal morpholin-4-ium p-aminobenzoate has been grown for the first time. ? The structure is reported for the first time in the literature. ? Thermal, optical and SHG studies suggest its suitability for various NLO applications. -- Abstract: The title compound, morpholin-4-ium p-aminobenzoate (MPABA)(C{sub 4}H{sub 10}NO{sup +},C{sub 7}H{sub 6}NO{sub 2}{sup ?}), has been synthesized for the first time by the addition of morpholine with 4-aminobenzoic acid in equi-molar ratio and good quality single crystals have been grown by solution growth technique using methanol as a solvent. The molecular structure of the compound was solved and refined by Direct Methods using SHELXS97 and full-matrix least-squares technique using SHELXL97, respectively. MPABA crystallizes in a monoclinic system with unit cell parameters, a = 5.948(5) ?, b = 18.033(4) ?, c = 10.577(5) ?, ? = 90.40(1)° and non-centrosymmetric space group Cc. The experimentally measured density and chemical compositions were found to be in good agreement with the theoretical values. The phases and functional groups of MPABA have been identified and confirmed through powder X-ray diffraction and Fourier transform infrared (FTIR) studies, respectively. The thermal stability and decomposition details were studied through TG/DTA thermograms. The UV–visible transmission spectra were recorded for the grown crystal and its NLO characteristic was explored by powder second harmonic generation (SHG) studies.

  19. Development of large-area monolithically integrated silicon-film photovoltaic modules. Annual subcontract report, 1 May 1991--15 November 1991

    SciTech Connect (OSTI)

    Rand, J.A.; Bacon, C.; Cotter, J.E.; Lampros, T.H.; Ingram, A.E.; Ruffins, T.R.; Hall, R.B.; Barnett, A.M. [AstroPower, Inc., Newark, DE (United States)

    1992-07-01T23:59:59.000Z

    This report describes work to develop Silicon-Film Product III into a low-cost, stable device for large-scale terrestrial power applications. The Product III structure is a thin (< 100 {mu}m) polycrystalline silicon layer on a non-conductive supporting ceramic substrate. The presence of the substrate allows cells to be isolated and in interconnected monolithically in various series/parallel configurations. The long-term goal for the product is efficiencies over 18% on areas greater than 1200 cm{sup 2}. The high efficiency is made possible through the benefits of using polycrystalline thin silicon incorporated into a light-trapping structure with a passivated back surface. Short-term goals focused on the development of large-area ceramics, a monolithic interconnection process, and 100 cm{sup 2} solar cells. Critical elements of the monolithically integrated device were developed, and an insulating ceramic substrate was developed and tested. A monolithic interconnection process was developed that will isolate and interconnect individual cells on the ceramic surface. Production-based, low-cost process steps were used, and the process was verified using free-standing silicon wafers to achieve an open-circuit voltage (V{sub oc}) of 8.25 V over a 17-element string. The overall efficiency of the silicon-film materials was limited to 6% by impurities. Improved processing and feedstock materials are under investigation.

  20. Electronic stiffness of a superconducting niobium nitride single crystal under pressure Xiao-Jia Chen, Viktor V. Struzhkin, Zhigang Wu, Ronald E. Cohen, Simon Kung,* Ho-kwang Mao, and Russell J. Hemley

    E-Print Network [OSTI]

    Wu, Zhigang

    Electronic stiffness of a superconducting niobium nitride single crystal under pressure Xiao report a quantitative study of pressure effects on the superconducting transition temperature Tc transition temperatures Tc's of materials, pur- suing new classes of superconductors and shedding light

  1. JOURNAL DE PHYSIQUE CoIIoque C I , supplkment au no2-3, Tome 32, Fkvrier-Mars 1971, page C 1 -372 MAGNETIC PROPERTIES OF SINGLE CRYSTALS OF EUROPIUM,

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    MAGNETIC PROPERTIES OF SINGLE CRYSTALS OF EUROPIUM, NEODYMIUM, AND PRASEODYMIUM T. JOHANSSON, K. A. Mc EWEN will be described in turn. 2. Europium. - The magnetization of polycrys- talline Eu has previously been measured [I

  2. Powerful, Efficient Electric Vehicle Chargers: Low-Cost, Highly-Integrated Silicon Carbide (SiC) Multichip Power Modules (MCPMs) for Plug-In Hybrid Electric

    SciTech Connect (OSTI)

    None

    2010-09-14T23:59:59.000Z

    ADEPT Project: Currently, charging the battery of an electric vehicle (EV) is a time-consuming process because chargers can only draw about as much power from the grid as a hair dryer. APEI is developing an EV charger that can draw as much power as a clothes dryer, which would drastically speed up charging time. APEI's charger uses silicon carbide (SiC)-based power transistors. These transistors control the electrical energy flowing through the charger's circuits more effectively and efficiently than traditional transistors made of straight silicon. The SiC-based transistors also require less cooling, enabling APEI to create EV chargers that are 10 times smaller than existing chargers.

  3. This Ph.D thesis encompasses a global numerical simulation of the needleeye float zone process, used to grow silicon single crystals. The numerical models includes coupled electro

    E-Print Network [OSTI]

    and free surface models and a global heat transfer model, with moving boundaries. An axisymmetric fluid to determine flow field, after the phase boundaries have been determined, by the heat transfer model. A finite field, from which temperature gradients are determined. The heat transfer model is furthermore expanded

  4. Floating Silicon Method

    SciTech Connect (OSTI)

    Kellerman, Peter

    2013-12-21T23:59:59.000Z

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  5. Magnetic structure of Sr{sub 2}Fe{sub 2}O{sub 5} brownmillerite by single-crystal Mössbauer spectroscopy

    SciTech Connect (OSTI)

    Waerenborgh, J.C. [UCQR, IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, CFMC-UL, Estrada Nacional 10, 2686-953 Sacavém (Portugal); Tsipis, E.V. [UCQR, IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, CFMC-UL, Estrada Nacional 10, 2686-953 Sacavém (Portugal); Department of Materials and Ceramic Engineering, CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Auckett, J.E.; Ling, C.D. [School of Chemistry, The University of Sydney, Sydney 2006 (Australia); Kharton, V.V., E-mail: kharton@ua.pt [Department of Materials and Ceramic Engineering, CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Institute of Solid State Physics RAS, Chernogolovka 142432, Moscow Region (Russian Federation)

    2013-09-15T23:59:59.000Z

    In order to determine orientation of the Fe{sup 3+} magnetic moments and electric field gradient (efg) axes in the brownmillerite-type strontium ferrite structure for both iron sublattices where the efg tensor is not axially symmetric, the Mössbauer spectra of powdered and oriented single-crystal Sr{sub 2}Fe{sub 2}O{sub 5} were analyzed by solving the complete Hamiltonian for hyperfine interactions in the excited and ground states of the {sup 57}Fe nuclei. The magnetic moments of both octahedrally and tetrahedrally coordinated iron cations lie on the ac-plane of the orthorhombic unit cell and are parallel to the shortest c-axis, whilst the main efg axes are parallel to the longest crystallographic axis, b. This orientation is similar to that in Ca{sub 2}Fe{sub 2}O{sub 5}, in spite of the structural differences of strontium and calcium ferrite brownmillerites at low temperatures. - Graphical abstract: Mössbauer spectra of powdered and oriented single-crystal Sr{sub 2}Fe{sub 2}O{sub 5}, analyzed by solving the complete Hamiltonian for hyperfine interactions in the excited and ground states of the {sup 57}Fe nuclei, show that the magnetic moments of both octahedrally and tetrahedrally coordinated iron cations are parallel to the shortest c-axis of the orthorhombic brownmillerite unit cell . Display Omitted - Highlights: • Single-crystal Mössbauer spectroscopy is used to study magnetic structure of Sr{sub 2}Fe{sub 2}O{sub 5}. • Complete Hamiltonian for hyperfine interactions in excited and ground states was solved. • Fe{sup 3+} magnetic moments are parallel to the shortest crystallographic axis c. • The orientation of nuclear electric field gradient is similar to that in Ca{sub 2}Fe{sub 2}O{sub 5}.

  6. Rabi Waves and Peculiarities of Raman Scattering in Carbon Nanotubes, Produced by High Energy Ion Beam Modification of Diamond Single Crystals

    E-Print Network [OSTI]

    Dmitry Yearchuck; Alla Dovlatova

    2011-03-06T23:59:59.000Z

    QED-model for multichain coupled qubit system, proposed in \\cite{Part1}, was confirmed by Raman scattering studies of carbon zigzag-shaped nanotubes, produced by high energy ion beam modification of natural diamond single crystals. New quantum optics phenomenon - Rabi waves - has been experimentally identified for the first time. Raman spectra in perfect quasi-1D carbon nanotubes are quite different in comparison with well known Raman spectra in 2D carbon nanotubes of larger diameter. They characterized by vibronic mode of Su-Schriffer-Heeger $\\sigma$-polaron lattice and its revival part in frequency representation, which is the consequence of Rabi wave packet formation.

  7. Torque magnetometry study of metamagnetic transitions in single-crystal HoNi(2)B(2)C at T approximate to 1.9 K

    E-Print Network [OSTI]

    Rathnayaka, K. D. D.; Belevtsev, B. I.; Naugle, Donald G.

    2007-01-01T23:59:59.000Z

    Torque magnetometry study of metamagnetic transitions in single-crystal HoNi2B2C at T?1.9 K K. D. D. Rathnayaka,1 B. I. Belevtsev,2,* and D. G. Naugle1,? 1Department of Physics, Texas A&M University, College Station, Texas 77843-4242, USA 2B... of superconductivity and long-range magnetic order. Although the borocarbides were studied quite intensively, certain important issues remain open. We report a torque magnetometry study of metamagnetic transitions at low tem- perature #1;T#3;1.9 K#2; in a single...

  8. Heterogeneous lithium niobate photonics on silicon substrates

    E-Print Network [OSTI]

    Fathpour, Sasan

    Heterogeneous lithium niobate photonics on silicon substrates Payam Rabiei,1,* Jichi Ma,1 Saeed-confined lithium niobate photonic devices and circuits on silicon substrates is reported based on wafer bonding high- performance lithium niobate microring optical resonators and Mach- Zehnder optical modulators

  9. Method for forming silicon on a glass substrate

    DOE Patents [OSTI]

    McCarthy, A.M.

    1995-03-07T23:59:59.000Z

    A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

  10. Magnetic Field Induced Phase Transitions in Gd5(Si1.95Ge2.05)Single Crystal and the Anisotropic Magnetocaloric Effect

    SciTech Connect (OSTI)

    H. Tang; V.K. Pecharsky; A.O. Pecharsky; D.L. Schlagel; T.A. Lograsso; K.A. Gschneidner,jr.

    2004-09-30T23:59:59.000Z

    The magnetization measurements using a Gd{sub 5}(Si{sub 1.95}Ge{sub 2.05}) single crystal with the magnetic field applied along three crystallographic directions, [001], [010] and [100], were carried out as function of applied field (0-56 kOe) at various temperatures ({approx}5-320 K). The magnetic-field induced phase transformations at temperature above the zero-field critical temperature, i.e. the paramagnetic (PM) {leftrightarrow} ferromagnetic (FM) transitions with application or removal of magnetic field, are found to be temperature dependent and hysteretic. The corresponding critical fields increase with increasing temperature. The magnetic field (H)-temperature (T) phase diagrams have been constructed for the Gd{sub 5}(Si{sub 1.95}Ge{sub 2.05}) single crystal with field along the three directions. A small anisotropy has been observed. The magnetocaloric effect (MCE) has been calculated from the isothermal magnetization data, and the observed anisotropy correlates with H-T phase diagrams. The results are discussed in connection with the magnetic-field induced martensitic-like structural transition observed in the Gd{sub 5}(Si{sub 2}Ge{sub 2})-type compounds.

  11. Efficient Electro-Optical Modulation Based on Indium Tin Oxide

    E-Print Network [OSTI]

    Shi, Kaifeng

    2015-01-01T23:59:59.000Z

    We experimentally demonstrate several electro-optical modulators based on transparent conducting oxides. Our previous work demonstrated the modulator structure on glass substrate with broadband bias polarity-dependent modulation. Further exploration shows similar modulation effect of the modulator on quartz and silicon substrate.

  12. Infrared phonon modes in multiferroic single-crystal FeTe2O5Br

    SciTech Connect (OSTI)

    Miller, K. H.; Xu, X. S.; Berger, H.; Craciun, V.; Xi, Xiaoxiang; Martin, C.; Carr, G. L.; Tanner, D. B.

    2013-06-01T23:59:59.000Z

    Reflection and transmission as a function of temperature (7–300 K and 5–300 K respectively) have been measured on single crystals of the multiferroic compound FeTe2O5Br utilizing light spanning from the far infrared to the visible. The complex dielectric function and other optical properties were obtained via Kramers-Kronig analysis and by fits to a Drude-Lortentz model. Analysis of the anisotropic excitation spectra via Drude-Lorentz fitting and lattice dynamical calculations have led to the observation of 43 of the 53 modes predicted along the b axis of the monoclinic cell. The phonon response parallel to the a and c axes are also presented. Assignments to groups (clusters) of phonons have been made and trends within them are discussed in light of our calculated displacement patterns.

  13. Structural state of a radiation-modified Ti{sub 50}Ni{sub 47}Fe{sub 3} single crystal

    SciTech Connect (OSTI)

    Parkhomenko, V. D., E-mail: parkhomenko@imp.uran.ru; Dubinin, S. F.; Maksimov, V. I. [Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)

    2011-12-15T23:59:59.000Z

    The structural state of a Ti{sub 50}Ni{sub 47}Fe{sub 3} single crystal irradiated by fast neutrons (F = 2.5 Multiplication-Sign 10{sup 20} cm{sup -2}) at 340 K was studied by thermal neutron diffraction at 78 and 295 K. The melt of this composition was chosen with the purpose of designing a radiation-resistant material exhibiting a shape-memory effect. It was found that the melt remains crystalline after irradiation, whereas the Ti{sub 49}Ni{sub 51} crystal studied earlier becomes amorphous after an analogous irradiation. In spite of the fact that the main structural motif of the crystal remains unchanged after irradiation, martensitic transformations in the crystal do not occur and, consequently, the shape-memory effect is not retained. The radiation resistance of this class of crystals was estimated.

  14. Effect of electron irradiation on superconductivity in single crystals of Ba(Fe1-xRux)2As2 (x=0.24)

    SciTech Connect (OSTI)

    Prozorov, Ruslan [Ames Laboratory; Konczykowski, M [Laboratoire des Solides Irradies; Tanatar, Makariy A. [Ames Laboratory; Thaler, Alexander [Ames Laboratory; Budko, Serguei L [Ames Laboratory; Canfield, Paul C [Ames Laboratory; Mishra, V [Argonne National Laboratory; Hirschfeld, P J [University of Florida

    2014-11-01T23:59:59.000Z

    A single crystal of isovalently substituted Ba(Fe1?xRux)2As2 (x=0.24) is sequentially irradiated with 2.5 MeV electrons up to a maximum dose of 2.1×1019 e?/cm2. The electrical resistivity is measured in situ at T=22??K during the irradiation and ex situ as a function of temperature between subsequent irradiation runs. Upon irradiation, the superconducting transition temperature Tc decreases and the residual resistivity ?0 increases. We find that electron irradiation leads to the fastest suppression of Tc compared to other types of artificially introduced disorder, probably due to the strong short-range potential of the pointlike irradiation defects. A more detailed analysis within a multiband scenario with variable scattering potential strength shows that the observed Tc versus ?0 is fully compatible with s± pairing, in contrast to earlier claims that this model leads to a too rapid suppression of Tc with scattering.

  15. TL and PL studies on cubic fluoroperovskite single crystal (KMgF{sub 3}: Eu{sup 2+}, Ce{sup 3+})

    SciTech Connect (OSTI)

    Daniel, D. Joseph, E-mail: josephd@ssn.edu.in; Ramasamy, P. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam, Tamilnadu-603110 (India); Madhusoodanan, U.; Annalakshmi, O. [Radiological Safety Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamilnadu - 603102 (India)

    2014-04-24T23:59:59.000Z

    The perovskite-like KMgF{sub 3} polycrystalline compounds were synthesized by standard solid state reaction technique. Phase purity of the synthesized compounds was analyzed by powder X-ray diffraction technique. Single crystals of (0.2 mol% of EuF{sub 3} and CeF{sub 3}) Co-doped KMgF{sub 3} have been grown from melt by using a vertical Bridgman-Stockbarger method. Thermoluminescence (TL) characteristics of KMgF{sub 3} samples doped with Eu{sub 2+} and Ce{sub 3+} have been studied after ?-ray irradiation. At ambient conditions the photoluminescence spectra consisted of sharp line peaked of Eu{sub 2+} at 360 nm attributed to the f ? f transition ({sup 6}P{sub 7/2}?{sup 8}S{sub 7/2}) could only be observed due to the energy transfer from Ce{sub 3+} to Eu{sub 2+}.

  16. Combined Charge Carrier Transport and Photoelectrochemical Characterization of BiVO4 Single Crystals: Intrinsic Behavior of a Complex Metal Oxide

    SciTech Connect (OSTI)

    Rettie, Alexander J.; Lee, Heung Chan; Marshall, Luke G.; Lin, Jung-Fu; Capen, Cigdem; Lindemuth, Jeffrey; McCloy, John S.; Zhou, Jianshi; Bard, Allen J.; Mullins, C. Buddie

    2013-07-08T23:59:59.000Z

    ABSTRACT: Bismuth vanadate (BiVO4) is a promising photoelectrode material for the oxidation of water, but fundamental studies of this material are lacking. To address this, we report electrical and photoelectrochemical (PEC) properties of BiVO4 single crystals (undoped, 0.6% Mo and 0.3% W:BiVO4) grown using the floating zone technique. We demonstrate that a small polaron hopping conduction mechanism dominates from 250-400 K, transitioning to a variable range hopping mechanism at lower temperatures. An anisotropy ratio of ~3 was observed along the c-axis, attributed to the layered structure of BiVO4. Measurements of the AC field Hall effect yielded an electron mobility of ~0.2 cm2 V-1 s-1 for Mo and W:BiVO4 at 300 K. By application of the Gärtner model, a hole diffusion length of ~140 nm was estimated. As a result of low carrier mobility, attempts to measure the DC Hall effect were unsuccessful. Analyses of the Raman spectra showed that Mo and W substituted for V and acted as donor impurities. Mott-Schottky analysis of electrodes with the (001) face exposed yielded a flat band potential of 0.03-0.08 V vs. RHE, while incident photon conversion efficiency tests showed that the dark coloration of the doped single crystals did not result in additional photocurrent. Comparison of these intrinsic properties to other metal oxides for PEC applications gives valuable insight into this material as a photoanode.

  17. Bridgman Growth of Large SrI2:Eu2+ Single Crystals: A High-performance Scintillator for Radiation Detection Applications

    SciTech Connect (OSTI)

    Boatner, Lynn A [ORNL; Ramey, Joanne Oxendine [ORNL; Kolopus, James A [ORNL; Hawrami, Rastgo [Radiation Monitoring Devices, Watertown, MA; Higgins, William [Radiation Monitoring Devices, Watertown, MA; Van Loef, Edgar [Radiation Monitoring Devices, Watertown, MA; Glodo, J. [Radiation Monitoring Devices, Watertown, MA; Shah, Kanai [Radiation Monitoring Devices, Watertown, MA; Bhattacharya, P. [Fisk University, Nashville, TN; Tupitsyn, E [Fisk University, Nashville, TN; Groza, Michael [Fisk University, Nashville, TN; Burger, Arnold [Fisk University, Nashville, TN

    2013-01-01T23:59:59.000Z

    Single-crystal strontium iodide (SrI2) doped with relatively high levels (e.g., 3 - 6 %) of Eu2+ exhibits characteristics that make this material superior, in a number of respects, to other scintillators that are currently used for radiation detection. Specifically, SrI2:Eu2+ has a light yield that is significantly higher than LaBr3:Ce3+ -a currently employed commercial high-performance scintillator. Additionally, SrI2:Eu2+ is characterized by an energy resolution as high as 2.6% at the 137Cs gamma-ray energy of 662 keV, and there is no radioactive component in SrI2:Eu2+ - unlike LaBr3:Ce3+ that contains 138La. The Ce3+-doped LaBr3 decay time is, however, faster (30 nsec) than the 1.2 sec decay time of SrI2:Eu2+. Due to the relatively low melting point of strontium iodide (~515 oC), crystal growth can be carried out in quartz crucibles by the vertical Bridgman technique. Materials-processing and crystal-growth techniques that are specific to the Bridgman growth of europium-doped strontium iodide scintillators are described here. These techniques include the use of a porous quartz frit to physically filter the molten salt from a quartz antechamber into the Bridgman growth crucible and the use of a bent or bulb grain selector design to suppress multiple grain growth. Single crystals of SrI2:Eu2+ scintillators with good optical quality and scintillation characteristics have been grown in sizes up to 5.0 cm in diameter by applying these techniques. Other aspects of the SrI2:Eu2+ crystal-growth methods and of the still unresolved crystal-growth issues are described here.

  18. Search for WW and WZ production in lepton, neutrino plus jets final states at CDF Run II and Silicon module production and detector control system for the ATLAS SemiConductor Tracker

    SciTech Connect (OSTI)

    Sfyrla, Anna; /Geneva U.

    2008-03-01T23:59:59.000Z

    In the first part of this work, we present a search for WW and WZ production in charged lepton, neutrino plus jets final states produced in p{bar p} collisions with {radical}s = 1.96 TeV at the Fermilab Tevatron, using 1.2 fb{sup -1} of data accumulated with the CDF II detector. This channel is yet to be observed in hadron colliders due to the large singleWplus jets background. However, this decay mode has a much larger branching fraction than the cleaner fully leptonic mode making it more sensitive to anomalous triple gauge couplings that manifest themselves at higher transverse W momentum. Because the final state is topologically similar to associated production of a Higgs boson with a W, the techniques developed in this analysis are also applicable in that search. An Artificial Neural Network has been used for the event selection optimization. The theoretical prediction for the cross section is {sigma}{sub WW/WZ}{sup theory} x Br(W {yields} {ell}{nu}; W/Z {yields} jj) = 2.09 {+-} 0.14 pb. They measured N{sub Signal} = 410 {+-} 212(stat) {+-} 102(sys) signal events that correspond to a cross section {sigma}{sub WW/WZ} x Br(W {yields} {ell}{nu}; W/Z {yields} jj) = 1.47 {+-} 0.77(stat) {+-} 0.38(sys) pb. The 95% CL upper limit to the cross section is estimated to be {sigma} x Br(W {yields} {ell}{nu}; W/Z {yields} jj) < 2.88 pb. The second part of the present work is technical and concerns the ATLAS SemiConductor Tracker (SCT) assembly phase. Although technical, the work in the SCT assembly phase is of prime importance for the good performance of the detector during data taking. The production at the University of Geneva of approximately one third of the silicon microstrip end-cap modules is presented. This collaborative effort of the university of Geneva group that lasted two years, resulted in 655 produced modules, 97% of which were good modules, constructed within the mechanical and electrical specifications and delivered in the SCT collaboration for assembly on the end-cap disks. The SCT end-caps and barrels consist of 4088 silicon modules, with a total of 6.3 million readout channels. The coherent and safe operation of the SCT during commissioning and subsequent operation is the essential task of the Detector Control System (DCS). The main building blocks of the DCS are the cooling system, the power supplies and the environmental system. The DCS has been initially developed for the SCT assembly phase and this system is described in the present work. Particular emphasis is given in the environmental hardware and software components, that were my major contributions. Results from the DCS testing during the assembly phase are also reported.

  19. Nonlinear-optical and structural properties of nanocrystalline silicon carbide films

    SciTech Connect (OSTI)

    Brodyn, M. S.; Volkov, V. I., E-mail: volkov@iop.kiev.ua; Lyakhovetskii, V. R.; Rudenko, V. I. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine); Puzilkov, V. M.; Semenov, A. V. [National Academy of Sciences of Ukraine, Institute of Monocrystals (Ukraine)

    2012-02-15T23:59:59.000Z

    The aim of this study is to investigate the nonlinearity of refraction in nanostructured silicon carbide films depending on their structural features (synthesis conditions for such films, substrate temperature during their deposition, concentration of the crystalline phase in the film, Si/C ratio of atomic concentrations in the film, and size of SiC nanocrystals formed in the film). The corresponding dependences are obtained, as well as the values of nonlinear-optical third-order susceptibility {chi}{sup (3)}({omega}; {omega}, -{omega}, {omega}) for various silicon polytypes (3C, 21R, and 27R) which exceed the value of {chi}{sup (3)} in bulk silicon carbide single crystals by four orders of magnitude.

  20. Seventh workshop on the role of impurities and defects in silicon device processing

    SciTech Connect (OSTI)

    NONE

    1997-08-01T23:59:59.000Z

    This workshop is the latest in a series which has looked at technological issues related to the commercial development and success of silicon based photovoltaic (PV) modules. PV modules based on silicon are the most common at present, but face pressure from other technologies in terms of cell performance and cell cost. This workshop addresses a problem which is a factor in the production costs of silicon based PV modules.

  1. Process Research of Polycrystalline Silicon Material (PROPSM). Quarterly report No. 1, November 8-December 31, 1983

    SciTech Connect (OSTI)

    Culik, J.S.

    1984-01-01T23:59:59.000Z

    Recent reported results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Most of the studies have been performed on very small grain or short minority-carrier diffusion length silicon. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is 20 to 40 mV less. The goal of this program is to minimize the variations in open-circuit voltage and fill-factor that are caused by structural defects by passivating these defects using a hydrogenation process.

  2. Reciprocal space analysis of the microstructure of luminescent and nonluminescent porous silicon films

    SciTech Connect (OSTI)

    Lee, S.R.; Barbour, J.C.; Medernach, J.W.; Stevenson, J.O.; Custer, J.S.

    1994-12-31T23:59:59.000Z

    The microstructure of anodically prepared porous silicon films was determined using a novel X-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive X- ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p{sup {minus}} porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n{sup +} and p{sup +} porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure.

  3. Amorphous Silicon

    Broader source: Energy.gov [DOE]

    DOE has a proven track record of funding successes in amorphous silicon (a-Si)research. A list of current projects, summary of the benefits, and discussion on the production and manufacturing of...

  4. PHONON DISPERSION CURVES OF ORDERED PHASES OF T.B.B.A. Abstract. --The lattice dynamics of a deuterated single crystal of T.B.B.A. have been measured

    E-Print Network [OSTI]

    Boyer, Edmond

    of a deuterated single crystal of T.B.B.A. have been measured by mean of inelastic neutron scattering of the molecules. Previous neutron inelastic scattering measurements have been done on non-deuterated single of a melting of the terminal aliphatic chains. So neutron coherent inelastic scattering measure- ments have

  5. Optical interband transitions in relaxor-based ferroelectric 0.93Pb,,Zn1/3Nb2/3...O30.07PbTiO3 single crystal

    E-Print Network [OSTI]

    Cao, Wenwu

    Optical interband transitions in relaxor-based ferroelectric 0.93Pb,,Zn1/3Nb2/3...O3­0.07PbTiO3 June 2010 The optical transmission spectrum of 111 c poled relaxor-based ferroelectric single crystal 0. The optical absorption edge has been determined and the wavelength dependence of the absorption coefficient

  6. Photorefractive properties of undoped, cerium-doped, and iron-doped single-crystal Sr/sub 0. 6/Ba/sub 0. 4/Nb/sub 2/O/sub 6/

    SciTech Connect (OSTI)

    Rakuljic, G.A.; Yariv, A.; Neurgaonkar, R.

    1986-11-01T23:59:59.000Z

    The authors present the results of theoretical and experimental studies of the photorefractive effort in single-crystal SBN:60, SBN:Ce, and SBN:Fe. The two-beam coupling coefficients, response times, and absorption coefficients of these materials are given.

  7. Germanium-rich silicon-germanium materials for field-effect modular application

    E-Print Network [OSTI]

    Jongthammanurak, Samerkhae

    2008-01-01T23:59:59.000Z

    The development of electric-field-induced optical modulation in the materials capable of monolithically integrated on silicon (Si) substrates offer the possibility of high-speed modulation in a pico second timeframe as ...

  8. Ti-Sn alloy nanodot composites embedded in single-crystal SiO{sub 2} by low energy dynamic coimplantation

    SciTech Connect (OSTI)

    Zhao, J. P.; Meng, Y.; Huang, D. X.; Rayabarapu, R. K.; Rabalais, J. W. [Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Department of Chemistry and Physics, Lamar University, P.O. Box 10022 Beaumont, Texas 77710 (United States)

    2006-10-15T23:59:59.000Z

    Organized extremely small Ti-Sn alloy nanodots have been formed in the subsurface of SiO{sub 2} by dynamic coimplantation of isotopic {sup 48}Ti{sup +} and {sup 120}Sn{sup +} at a low kinetic energy of 9 keV into (0001) Z-cut quartz at different substrate temperatures. Transmission electron microscopy images show that the Ti-Sn alloy nanodots are single crystal and have been formed uniformly at room temperature. They are distributed in a two-dimensional array with similar size of {approx}4 nm and constant interdot spacing between each dot. The regions beyond and below the two-dimensional array are depleted of detectable nanodots. At high temperature, the distribution and crystallinity were destroyed with much smaller amorphous nanodots in a slightly deeper region. The implantation was carried out by dynamic coimplantation, rather than the commonly used sequential implantation. These results indicate that dynamic low energy coimplantation is capable of forming well-ordered two-dimensional array of alloy nanodots.

  9. Sm(Co{sub 1?x}Ni{sub x}){sub 5} ordered alloy thin films formed on Cr(100) single-crystal underlayers

    SciTech Connect (OSTI)

    Yanagawa, Takato, E-mail: yanagawa@futamoto.elect.chuo-u.ac.jp; Hotta, Yusuke; Yamada, Makoto; Ohtake, Mitsuru; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo University of the Arts, Taito-ku, Tokyo 110-8714 (Japan)

    2014-05-07T23:59:59.000Z

    Sm{sub 17}(Co{sub 1?x}Ni{sub x}){sub 83} (at.?%, x?=?0, 0.2, 0.8, and 1) alloy thin films are deposited on Cr(100) single-crystal underlayers at temperatures ranging between 100 and 500?°C by molecular beam epitaxy. The effects of substrate temperature and Ni/Co composition on the film growth behavior and the detailed resulting structure are investigated. Formation of epitaxial RT{sub 5} (R: rare earth metal, T: transition metal) ordered crystals is, respectively, recognized for the films with x of 0, 0.2, 0.8, and 1 deposited at temperatures higher than 400, 400, 300, and 300?°C, whereas the films deposited below the respective temperatures consist of amorphous phases. The order degree increases with increasing the substrate temperature and the Ni content. The order degrees of films with x of 0, 0.2, 0.8, and 1 deposited at 500?°C are 0.6, 0.7, 0.8, and 0.9, respectively. A replacement of Co site in SmCo{sub 5} structure with Ni atom is useful for enhancing the formation of RT{sub 5} ordered phase.

  10. Octahedral distortion induced magnetic anomalies in LaMn{sub 0.5}Co{sub 0.5}O{sub 3} single crystals

    SciTech Connect (OSTI)

    Manna, Kaustuv, E-mail: kaustuvmanna@gmail.com; Elizabeth, Suja; Anil Kumar, P. S. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India); Bhadram, Venkata Srinu; Narayana, Chandrabhas [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

    2014-07-28T23:59:59.000Z

    Single crystals of LaMn{sub 0.5}Co{sub 0.5}O{sub 3} belonging to the ferromagnetic-insulator and distorted perovskite class were grown using a four-mirror optical float zone furnace. The as-grown crystal crystallizes into an orthorhombic Pbnm structure. The spatially resolved 2D Raman scan reveals a strain-induced distribution of transition metal (TM)–oxygen (O) octahedral deformation in the as-grown crystal. A rigorous annealing process releases the strain, thereby generating homogeneous octahedral distortion. The octahedra tilt by reducing the bond angle TM-O-TM, resulting in a decline of the exchange energy in the annealed crystal. The critical behavior is investigated from the bulk magnetization. It is found that the ground state magnetic behavior assigned to the strain-free LaMn{sub 0.5}Co{sub 0.5}O{sub 3} crystal is of the 3D Heisenberg kind. Strain induces mean field-like interaction in some sites, and consequently, the critical exponents deviate from the 3D Heisenberg class in the as-grown crystal. The temperature-dependent Raman scattering study reveals strong spin-phonon coupling and the existence of two magnetic ground states in the same crystal.

  11. Magnetic structures and interplay between rare-earth Ce and Fe magnetism in single-crystal CeFeAsO

    SciTech Connect (OSTI)

    Zhang, Qiang [Ames Laboratory; Tian, Wei [Ames Laboratory; Li, Haifeng [Ames Laboratory; Kim, Jong-Woo [Argonne Naitonal Laboratory; Yan, Jiaqiang [Ames Laboratory; McCallum, Robert William [Ames Laboratory; Lograsso, Thomas A. [Ames Laboratory; Zarestky, Jerel L. [Ames Laboratory; Budko, Sergey L. [Ames Laboratory; McQueeney, Robert J. [Ames Laboratory; Vaknin, David [Ames Laboratory

    2013-11-27T23:59:59.000Z

    Neutron and synchrotron resonant x-ray magnetic scattering (RXMS) complemented by heat capacity and resistivity measurements reveal the evolution of the magnetic structures of Fe and Ce sublattices in a CeFeAsO single crystal. The RXMS of magnetic reflections at the Ce LII edge shows a magnetic transition that is specific to the Ce antiferromagnetic long-range ordering at TCe? 4 K with short-range Ce ordering above TCe, whereas neutron diffraction measurements of a few magnetic reflections indicate a transition at T?? 12 K with an unusual order parameter. Detailed order-parameter measurements on several magnetic reflections by neutrons show a weak anomaly at 4 K that we associate with the Ce ordering. The successive transitions at TCe and T? can also be clearly identified by two anomalies in heat capacity and resistivity measurements. The higher transition temperature at T?? 12 K is mainly ascribed to Fe spin reorientation transition, below which Fe spins rotate uniformly and gradually in the ab plane. The Fe spin reorientation transition and short-range Ce ordering above TCe reflect the strong Fe-Ce couplings prior to long-range ordering of the Ce. The evolution of the intricate magnetic structures in CeFeAsO going through T? and TCe is proposed.

  12. Optical and magneto-optical properties of single crystals of RFe{sub 2} (R = Gd, Tb, Ho, and Lu) and GdCo{sub 2} intermetallic compounds

    SciTech Connect (OSTI)

    Lee, S.J.

    1999-02-12T23:59:59.000Z

    The author has studied the diagonal and off-diagonal optical conductivity of RFe{sub 2}(R = Gd, Tb, Ho, Lu) and GdCo{sub 2} single crystals grown by the flux method. Using spectroscopic ellipsometry the author has measured the dielectric function from 1.5 to 5.5 eV. The magneto-optical Kerr spectrometer at temperatures between 7 and 295 K and applied magnetic fields between 0.5 to 1.6 T. The apparatus and calibration method are described in detail. Using magneto-optical data and optical constants he derives the experimental value of the off-diagonal conductivity components. Theoretical calculations of optical conductivities and magneto-optical parameters were performed using the tight binding-linear muffin tin orbitals method within the local spin density approximation. He applied this TB-LMTO method to LuFe{sub 2}. The theoretical results obtained agree well with the experimental data. The oxidation effects on the diagonal part of the optical conductivity were considered using a three-phase model. The oxidation effects on the magneto-optical parameters were also considered by treating the oxide layer as a nonmagnetic thin transparent layer. These corrections change not only the magnitude but also the shape of the optical conductivity and the magneto-optical parameters.

  13. Cascade phonon-assisted trapping of positrons by divacancies in n-FZ-Si(P) single crystals irradiated with 15 MeV protons

    SciTech Connect (OSTI)

    Arutyunov, N. Yu., E-mail: n-arutyunov@yahoo.com [Martin Luther University Halle, Department of Physics, 06120 Halle, Germany and Inst. of Ion-Plasma and Laser Technologies (Inst. of Electronics), 700187 Tashkent (Uzbekistan); Emtsev, V. V.; Oganesyan, G. A. [Ioffe Physico-Technical Institute, 194021 St. Petersburg (Russian Federation); Krause-Rehberg, R.; Kessler, C. [Martin Luther University Halle, Department of Physics, 06120 Halle (Germany); Elsayed, M. [Martin Luther University Halle, Department of Physics, 06120 Halle, Germany and Minia university, Faculty of Science, Physics Department, P.O. box 61519 Minia (Egypt); Kozlovski, V. V. [St. Petersburg State Polytechnic University, 195251 St. Petersburg (Russian Federation)

    2014-02-21T23:59:59.000Z

    The trapping of positrons by the radiation defects in moderately doped oxygen-lean n-FZ-Si(P) single crystal irradiated with 15 MeV protons has been investigated in a comparative way using the positron lifetime spectroscopy and Hall effect measurements. The experiments were carried out within a wide temperature interval ranging from 25 K – 29 K to 300 K. The positron trapping rate for divacancies was reconstructed in the course of many-stage isochronal annealing. The concentration and the charged states of divacancies (V{sub 2}{sup ?} and V{sub 2}{sup ??}) were estimated. The temperature dependency of the trapping cross section of positrons by the negatively charged divacancies is in a good agreement with the data of calculations based on the assumptions of the cascade phonon-assisted mechanism of exchange of the energy between the positron and acoustic long-wave phonons. Obeying ? T{sup ?3} law, the cross-section of the trapping of positrons by divacancies changes considerably ranging from ?1.7×10{sup ?12} cm{sup 2} (66 – 100 K) to ?2×10{sup ?14} cm{sup 2} (? 250 K). The characteristic length of trapping of the positron by V{sub 2}{sup ??} divacancy was estimated to be l{sub 0}(V{sub 2}{sup ??})?(3.4±0.2)×10{sup ?8} cm.

  14. Atomic control and characterization of surface defect states of TiO{sub 2} terminated SrTiO{sub 3} single crystals

    SciTech Connect (OSTI)

    Kareev, M.; Prosandeev, S.; Liu, J.; Gan, C.; Kareev, A.; Xiao, Min; Chakhalian, J. [University of Arkansas, Fayetteville, Arkansas 72701 (United States); Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2008-08-11T23:59:59.000Z

    By using an alternative wet-etch procedure, we have obtained high-quality atomically flat TiO{sub 2} terminated surfaces of SrTiO{sub 3} single crystals with the morphology equivalent to that of the conventional wet-etch methods. By applying a combined power of photoluminescence (PL) spectroscopy, reflection high-energy electron diffraction, atomic force microscopy imaging, and soft x-ray absorption (XAS), we were able to identify and monitor the complex evolution of oxygen defect states and Ti valency at the surface and near-surface layers. Our experiments revealed a high level of local defects resulting in the presence of the Ti{sup 3+} states at the surface. We have developed a method to control the defect states capable of a marked reduction of the defect concentration. We have demonstrated that the PL and XAS are able to distinguish the surface-related Ti{sup 3+} states from oxygen vacancies trapping charge transfer vibronic excitons that define the PL intensity. The experimental findings will have important implications for the growth of high-quality ultrathin complex oxide heterostructures.

  15. Atomic control and characterization of surface defect states of TiO(sub 2) terminated SrTiO(sub 3) single crystals.

    SciTech Connect (OSTI)

    Kareev, M.; Prosandeev, S.; Liu, J.; Gan, C.; Kareev, A.; Freeland, J. W.; Xiao, M.; Chakhalian, J.; Univ. of Arkansas

    2008-08-11T23:59:59.000Z

    By using an alternative wet-etch procedure, we have obtained high-quality atomically flat TiO{sub 2} terminated surfaces of SrTiO{sub 3} single crystals with the morphology equivalent to that of the conventional wet-etch methods. By applying a combined power of photoluminescence (PL) spectroscopy, reflection high-energy electron diffraction, atomic force microscopy imaging, and soft x-ray absorption (XAS), we were able to identify and monitor the complex evolution of oxygen defect states and Ti valency at the surface and near-surface layers. Our experiments revealed a high level of local defects resulting in the presence of the Ti{sup 3+} states at the surface. We have developed a method to control the defect states capable of a marked reduction of the defect concentration. We have demonstrated that the PL and XAS are able to distinguish the surface-related Ti{sup 3+} states from oxygen vacancies trapping charge transfer vibronic excitons that define the PL intensity. The experimental findings will have important implications for the growth of high-quality ultrathin complex oxide heterostructures.

  16. Micro benchtop optics by bulk silicon micromachining

    DOE Patents [OSTI]

    Lee, Abraham P. (Walnut Creek, CA); Pocha, Michael D. (Livermore, CA); McConaghy, Charles F. (Livermore, CA); Deri, Robert J. (Pleasanton, CA)

    2000-01-01T23:59:59.000Z

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  17. Guided wave propagation in 0.67Pb,,Mg1/3Nb2/3...O30.33PbTiO3 single crystal plate poled along 001c

    E-Print Network [OSTI]

    Cao, Wenwu

    Guided wave propagation in 0.67Pb,,Mg1/3Nb2/3...O3­0.33PbTiO3 single crystal plate poled along 001c relations of Lamb waves and shear horizontal SH waves propagating in the 100 and 110 directions of 0.67Pb Mg, respectively, for waves propagating along 100 and 110 directions. These limiting velocities

  18. Catalyzed hydrogenation of nitrogen and ethylene on metal (Fe, Pt) single crystal surfaces and effects of coadsorption: A sum frequency generation vibrational spectroscopy study

    SciTech Connect (OSTI)

    Westerberg, Staffan Per Gustav

    2004-12-15T23:59:59.000Z

    High-pressure catalytic reactions and associated processes, such as adsorption have been studied on a molecular level on single crystal surfaces. Sum Frequency Generation (SFG) vibrational spectroscopy together with Auger Electron Spectroscopy (AES), Temperature Programmed Desorption (TPD) and Gas Chromatography (GC) were used to investigate the nature of species on catalytic surfaces and to measure the catalytic reaction rates. Special attention has been directed at studying high-pressure reactions and in particular, ammonia synthesis in order to identify reaction intermediates and the influence of adsorbates on the surface during reaction conditions. The adsorption of gases N{sub 2}, H{sub 2}, O{sub 2} and NH{sub 3} that play a role in ammonia synthesis have been studied on the Fe(111) crystal surface by sum frequency generation vibrational spectroscopy using an integrated Ultra-High Vacuum (UHV)/high-pressure system. SFG spectra are presented for the dissociation intermediates, NH{sub 2} ({approx}3325 cm{sup -1}) and NH ({approx}3235 cm{sup -1}) under high pressure of ammonia (200 Torr) on the clean Fe(111) surface. Addition of 0.5 Torr of oxygen to 200 Torr of ammonia does not significantly change the bonding of dissociation intermediates to the surface. However, it leads to a phase change of nearly 180{sup o} between the resonant and non-resonant second order non-linear susceptibility of the surface, demonstrated by the reversal of the SFG spectral features. Heating the surface in the presence of 200 Torr ammonia and 0.5 Torr oxygen reduces the oxygen coverage, which can be seen from the SFG spectra as another relative phase change of 180{sup o}. The reduction of the oxide is also supported by Auger electron spectroscopy. The result suggests that the phase change of the spectral features could serve as a sensitive indicator of the chemical environment of the adsorbates.

  19. Metal-semiconductor-transition observed in Bi{sub 2}Ca(Sr, Ba){sub 2}Co{sub 2}O{sub 8+?} single crystals

    SciTech Connect (OSTI)

    Dong, Song-Tao [National Laboratory of Solid State Microstructures and Department of Material Science and Engineering, Nanjing University, Nanjing 210093 (China); Institute of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003 (China); Zhang, Bin-Bin; Zhang, Lun-Yong; Yao, Shu-Hua, E-mail: ybchen@nju.edu.cn, E-mail: shyao@nju.edu.cn; Zhou, Jian; Zhang, Shan-Tao; Gu, Zheng-Bin; Chen, Yan-Feng [National Laboratory of Solid State Microstructures and Department of Material Science and Engineering, Nanjing University, Nanjing 210093 (China); Chen, Y. B., E-mail: ybchen@nju.edu.cn, E-mail: shyao@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

    2014-07-28T23:59:59.000Z

    Electrical property evolution of Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+?} single crystals (AE?=?Ca, Sr and Ba) is systematically explored. When AE changes from Ca to Ba, the electrical property of Bi{sub 2}Ca{sub 2}Co{sub 2}O{sub 8+?} and Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+?} demonstrates semiconductor-like properties. But Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} shows the metallic behavior. Analysis of temperature-dependent resistance substantiates that from metallic Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} to semiconductor-like Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+?} can be attributed to Anderson localization. However the semiconductor behaviour of Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+?} and Bi{sub 2}Ca{sub 2}Co{sub 2}O{sub 8+?} is related to electronic correlations effect that is inferred by large negative magnetoresistance (?70%). The theoretical electronic structures and valence X-ray photoemission spectroscopy substantiate that there is a relative large density of state around Fermi level in Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} compared with other two compounds. It suggests that Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} is more apt to be metal in this material system.

  20. Upper critical fields and thermally-activated transport of Nd(0.7Fe0.3) FeAs single crystal

    SciTech Connect (OSTI)

    Balakirev, Fedor F [Los Alamos National Laboratory; Jaroszynski, J [NHMFL, FSU; Hunte, F [NHMFL, FSU; Balicas, L [NHMFL, FSU; Jo, Youn - Jung [NHMFL, FSU; Raicevic, I [NHMFL, FSU; Gurevich, A [NHMFL, FSU; Larbalestier, D C [NHMFL, FSU; Fang, L [CHINA; Cheng, P [CHINA; Jia, Y [CHINA; Wen, H H [CHINA

    2008-01-01T23:59:59.000Z

    We present measurements of the resistivity and the upper critical field H{sub c2} of Nd(O{sub 0.7}F{sub 0.3})FeAs single crystals in strong DC and pulsed magnetic fields up to 45 T and 60 T, respectively. We found that the field scale of H{sub c2} is comparable to {approx}100 T of high T{sub c} cuprates. H{sub c2}(T) parallel to the c-axis exhibits a pronounced upward curvature similar to what was extracted from earlier measurements on polycrystalline samples. Thus this behavior is indeed an intrinsic feature of oxypnictides, rather than manifestation of vortex lattice melting or granularity. The orientational dependence of H{sub c2} shows deviations from the one-band Ginzburg-Landau scaling. The mass anisotropy decreases as T decreases, from 9.2 at 44K to 5 at 34K. Spin dependent magnetoresistance and nonlinearities in the Hall coefficient suggest contribution to the conductivity from electron-electron interactions modified by disorder reminiscent that of diluted magnetic semiconductors. The Ohmic resistivity measured below T{sub c} but above the irreversibility field exhibits a clear Arrhenius thermally activated behavior over 4--5 decades. The activation energy has very different field dependencies for H{parallel}ab and H{perpendicular}ab. We discuss to what extent different pairing scenarios can manifest themselves in the observed behavior of H{sub c2}, using the two-band model of superconductivity. The results indicate the importance of paramagnetic effects on H{sub c2}(T), which may significantly reduce H{sub c2}(0) as compared to H{sub c2}(0) {approx}200--300 T based on extrapolations of H{sub c2}(T) near T{sub c} down to low temperatures.

  1. Symmetry of piezoelectric (1–x)Pb(Mg1/3Nb2/3)O?-xPbTiO? (x=0.31) single crystal at different length scales in the morphotropic phase boundary region

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, Kyou-Hyun; Payne, David A.; Zuo, Jian-Min

    2012-11-01T23:59:59.000Z

    We use probes of three different length scales to examine symmetry of (1–x)Pb(Mg1/3Nb2/3)O?-xPbTiO? (PMN-xPT) single crystals in the morphotropic phase boundary (MPB) region at composition x = 0.31 (PMN-31% PT). On the macroscopic scale, x-ray diffraction (XRD) shows a mixture of strong and weak diffraction peaks of different widths. The closest match to XRD peak data is made with monoclinic Pm (MC) symmetry. On the local scale of a few nanometers, convergent beam electron diffraction (CBED) studies, with a 1.6-nm electron probe, reveal no obvious symmetry. These CBED experimental patterns can be approximately matched with simulations based on monoclinic symmetry, which suggests locally distorted monoclinic structure. A monoclinic Cm (MA or MB)-like symmetry could also be obtained from certain regions of the crystal by using a larger electron probe size of several tens of nanometers in diameter. Thus the monoclinic symmetry of single crystal PMN-31%PT is developed only in parts of the crystal by averaging over locally distorted structure on the scale of few tens of nanometers. The macroscopic symmetry observed by XRD is a result of averaging from the local structure in PMN-31%PT single crystal. The lack of local symmetry at a few nanometers scale suggests that the polarization switching results from a change in local displacements, which are not restricted to specific symmetry planes or directions.

  2. Versatile module for experiments with focussing neutron guides

    SciTech Connect (OSTI)

    Adams, T.; Pfleiderer, C.; Böni, P. [Physik-Department, Technische Universität München, D-85748 Garching (Germany); Brandl, G.; Chacon, A.; Wagner, J. N.; Rahn, M.; Mühlbauer, S.; Georgii, R. [Physik-Department, Technische Universität München, D-85748 Garching (Germany); Heinz Maier-Leibnitz Zentrum, FRM II, Technische Universität München, D-85748 Garching (Germany)

    2014-09-22T23:59:59.000Z

    We report the development of a versatile module that permits fast and reliable use of focussing neutron guides under varying scattering angles. A simple procedure for setting up the module and neutron guides is illustrated by typical intensity patterns to highlight operational aspects as well as typical parasitic artefacts. Combining a high-precision alignment table with separate housings for the neutron guides on kinematic mounts, the change-over between neutron guides with different focussing characteristics requires no readjustments of the experimental setup. Exploiting substantial gain factors, we demonstrate the performance of this versatile neutron scattering module in a study of the effects of uniaxial stress on the domain populations in the transverse spin density wave phase of single crystal Cr.

  3. Enhanced thermoelectric performance of rough silicon nanowires

    E-Print Network [OSTI]

    Yang, Peidong

    LETTERS Enhanced thermoelectric performance of rough silicon nanowires Allon I. Hochbaum1 *, Renkun, such that roughly 15 terawatts of heat is lost to the environment. Thermoelectric modules could potentially convert part of this low-grade waste heat to electricity. Their efficiency depends on the thermoelectric figure

  4. Energy Policy 30 (2002) 477499 Photovoltaic module quality in

    E-Print Network [OSTI]

    Kammen, Daniel M.

    Energy Policy 30 (2002) 477­499 Photovoltaic module quality in the Kenyan solar home systems market purchases of clean decentralized photovoltaic technologies. Small amorphous-silicon modules dominate. This article analyzes market failure associated with photovoltaic module quality in the Kenyan SHS market

  5. Crystallographic, electronic, thermal, and magnetic properties of single-crystal SrCo2As2

    SciTech Connect (OSTI)

    Pandey, Abhishek [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Quirinale, D. G. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Jayasekara, W. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Sapkota, A. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Kim, M. G. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Dhaka, R. S. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Lee, Y. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Heitmann, T. W. [Univ. of Missouri, Columbia, MO (United States). Missouri Research Reactor; Stephens, P. W. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Ogloblichev, V. [Russian Academy of Sciences, Urals Div., Ekaterinburg (Russian Federation). Inst. of Metal Physics; Kreyssig, A. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; McQueeney, R. J. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Goldman, A. I. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Kaminski, Adam [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Harmon, B. N. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Furukawa, Y. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Johnston, D. C. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy

    2013-07-01T23:59:59.000Z

    In tetragonal SrCo2As2 single crystals, inelastic neutron scattering measurements demonstrated that strong stripe-type antiferromagnetic (AFM) correlations occur at a temperature T = 5 K [W. Jayasekara et al., arXiv:1306.5174] that are the same as in the isostructural AFe2As2 (A = Ca, Sr, Ba) parent compounds of high-Tc superconductors. This surprising discovery suggests that SrCo2As2 may also be a good parent compound for high-Tc superconductivity. Here, structural and thermal expansion, electrical resistivity ?, angle-resolved photoemission spectroscopy (ARPES), heat capacity Cp, magnetic susceptibility ?, 75As NMR and neutron diffraction measurements of SrCo2As2 crystals are reported together with LDA band structure calculations that shed further light on this fascinating material. The c-axis thermal expansion coefficient ?c is negative from 7 to 300 K, whereas ?a is positive over this T range. The ?(T) shows metallic character. The ARPES measurements and band theory confirm the metallic character and in addition show the presence of a flat band near the Fermi energy EF. The band calculations exhibit an extremely sharp peak in the density of states D(EF) arising from a flat dx2-y2 band. A comparison of the Sommerfeld coefficient of the electronic specific heat with ?(T ? 0) suggests the presence of strong ferromagnetic itinerant spin correlations which on the basis of the Stoner criterion predicts that SrCo2As2 should be an itinerant ferromagnet, in conflict with the magnetization data. The ?(T) does have a large magnitude, but also exhibits a broad maximum at 115 K suggestive of dynamic short-range AFM spin correlations, in agreement with the neutron scattering data. The measurements show no evidence for any type of phase transition between 1.3 and 300 K and we propose that metallic SrCo2As2 has a gapless quantum spin-liquid ground state.

  6. Efficient Wavelength Tuning Techniques for Integrated Silicon Photonics 

    E-Print Network [OSTI]

    Titriku, Alex K

    2014-12-04T23:59:59.000Z

    based on microring resonator devices offer a low-area and energy-efficient approach to realize both high-speed modulation and WDM with high-speed transmit-side ring modulators and high-Q receive-side drop filters. At the heart of silicon photonics...

  7. D0 silicon microstrip tracker

    SciTech Connect (OSTI)

    Burdin, Sergey

    2005-11-01T23:59:59.000Z

    The D0 Run II silicon microstrip tracker (SMT) has 3 square meters of Si area. There are 792,576 channels read out by 6192 SVXIIe chips on 912 read out modules. The SMT provides track and vertex reconstruction capabilities over the full pseudorapidity coverage of the D0 detector. The full detector has been running successfully since April 2002. This presentation covers the experience in commissioning and operating, the recent electronics upgrade which improved stability of the SMT and estimates of the radiation damage.

  8. Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation

    SciTech Connect (OSTI)

    Shcherbachev, K. D., E-mail: chterb@mail.ru; Voronova, M. I.; Bublik, V. T. [National University of Science and Technology “MISIS” (Russian Federation); Mordkovich, V. N., E-mail: mord36@mail.ru; Pazhin, D. M.; Zinenko, V. I.; Agafonov, Yu. A. [Russian Academy of Sciences, Institute of Microelectronic Technology and Ultra-High-Purity Materials (Russian Federation)

    2013-12-15T23:59:59.000Z

    The influence of the implantation of silicon single crystals by fluorine, nitrogen, oxygen, and neon ions on the distribution of strain and the static Debye-Waller factor in the crystal lattice over the implanted-layer depth has been investigated by high-resolution X-ray diffraction. The density depth distribution in the surface layer of native oxide has been measured by X-ray reflectometry. Room-temperature implantation conditions have ensured the equality of the suggested ranges of ions of different masses and the energies transferred by them to the target. It is convincingly shown that the change in the structural parameters of the radiation-damaged silicon layer and the native oxide layer depend on the chemical activity of the implanted ions.

  9. Author's personal copy CO/NO and CO/NO/O2 reactions over a AuPd single crystal catalyst

    E-Print Network [OSTI]

    Goodman, Wayne

    Model catalyst CO oxidation NO reduction Surface segregation Polarization modulation Infrared reflection 0) model catalyst at near atmospheric pressures. The alloy catalyst exhibits higher CO2 formation of Pd- only TWCs is near that of Pt/Rh TWCs, it is preferred since Rh is not required. Moreover, Pd

  10. Purified silicon production system

    DOE Patents [OSTI]

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30T23:59:59.000Z

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  11. Dense optical-electrical interface module

    SciTech Connect (OSTI)

    Paul Chang

    2000-12-21T23:59:59.000Z

    The DOIM (Dense Optical-electrical Interface Modules) is a custom-designed optical data transmission module employed in the upgrade of Silicon Vertex Detector of CDF experiment at Fermilab. Each DOIM module consists of a transmitter (TX) converting electrical differential input signals to optical outputs, a middle segment of jacketed fiber ribbon cable, and a receiver (RX) which senses the light inputs and converts them back to electrical signals. The targeted operational frequency is 53 MHz, and higher rate is achievable. This article outlines the design goals, implementation methods, production test results, and radiation hardness tests of these modules.

  12. Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-23T23:59:59.000Z

    The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

  13. ZnO buffer layer for metal films on silicon substrates

    DOE Patents [OSTI]

    Ihlefeld, Jon

    2014-09-16T23:59:59.000Z

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  14. Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells

    E-Print Network [OSTI]

    Powell, Douglas M. (Douglas Michael)

    2014-01-01T23:59:59.000Z

    Reducing material use is a major driver for cost reduction of crystalline silicon photovoltaic modules. The dominant wafer fabrication process employed in the industry today, ingot casting & sawing, wastes approximately ...

  15. Determination of W boson helicity fractions in top quark decays in p anti-p collisions at CDF Run II and production of endcap modules for the ATLAS Silicon Tracker

    SciTech Connect (OSTI)

    Moed, Shulamit; /Geneva U.

    2007-01-01T23:59:59.000Z

    The thesis presented here includes two parts. The first part discusses the production of endcap modules for the ATLAS SemiConductor Tracker at the University of Geneva. The ATLAS experiment is one of the two multi-purpose experiments being built at the LHC at CERN. The University of Geneva invested extensive efforts to create an excellent and efficient module production site, in which 655 endcap outer modules were constructed. The complexity and extreme requirements for 10 years of LHC operation with a high resolution, high efficiency, low noise tracking system resulted in an extremely careful, time consuming production and quality assurance of every single module. At design luminosity about 1000 particles will pass through the tracking system each 25 ns. In addition to requiring fast tracking techniques, the high particle flux causes significant radiation damage. Therefore, modules have to be constructed within tight and accurate mechanical and electrical specification. A description of the ATLAS experiment and the ATLAS Semiconductor tracker is presented, followed by a detailed overview of the module production at the University of Geneva. My personal contribution to the endcap module production at the University of Geneva was taking part, together with other physicists, in selecting components to be assembled to a module, including hybrid reception tests, measuring the I-V curve of the sensors and the modules at different stages of the production, thermal cycling the modules and performing electrical readout tests as an initial quality assurance of the modules before they were shipped to CERN. An elaborated description of all of these activities is given in this thesis. At the beginning of the production period the author developed a statistics package which enabled us to monitor the rate and quality of the module production. This package was then used widely by the ATLAS SCT institutes that built endcap modules of any type, and kept being improved and updated. The production monitoring and summary using this package is shown in this thesis. The second part of the thesis reports a measurement of the fraction of longitudinal and right-handed helicity states of W bosons in top quark decays. This measurement was done using 955 pb{sup -1} of data collected with the CDF detector at the TEvatron, where protons and anti-protons are collided with a center-of-mass energy of 1.96 TeV. the helicity fraction measurements take advantage of the fact that the angular distribution of the W boson decay products depends on the helicity state of the W which they originate from. They analyze t{bar t} events in the 'lepton+jets' channel and look at the leptonic side of decay. They construct templates for the distribution of cos{theta}*, the angle between the charged lepton and the W flight direction in the rest frame of the top quark. Using Monte Carlo techniques, they construct probability distributions ('templates') for cos{theta}* in the case of left-handed, longitudinal and right-handed Ws and a template for the background model. They extract the W helicity fractions using an unbinned likelihood fitter based on the information of these templates. The Standard Model predicts the W helicity fractions to be about 70% longitudinal and 30% left-handed, while the fraction of right-handed W bosons in top decays is highly suppressed and vanishes when neglecting the mass of the b quark.

  16. Preparation of silicon substrates for gallium-arsenide solar cells by electron-beam-pulse processing. Annual technical report, March 15, 1980-March 15, 1981

    SciTech Connect (OSTI)

    Tobin, S.P.

    1981-05-01T23:59:59.000Z

    In the past year a process has been developed for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency GaAs solar cells on low-cost silicon substrates in an economical manner. Thin (less than or equal to 1 ..mu..m) layers of Ge have been deposited on Si wafers by chemical vapor deposition (CVD) in single-crystal form or by vacuum evaporation in amorphous or polycrystalline form. The CVD films have given the best results, with good crystallinity and electrical properties as deposited. A persistent problem with surface roughness in the as-deposited films has been overcome by pulsed electron beam melting of the near-surface region in time periods on the order of a microsecond. The brief molten period smooths the surface features without compromising the crystallinity, electrical properties, or interfacial abruptness of the Ge film. These layers are of a quality suitable for further evaluation by GaAs growth and cell processing in the next phase of the program. Pulsed electron beam processing also serves a vital function for the evaporated Ge films, which are melted by the beam and recrystallized on the Si substrates, epitaxial single crystal Ge layers result from amorphous or polycrystalline starting films. To date results have not been as satisfactory as for CVD films; contamination from several sources has been identified as a problem. Many of these sources have been eliminated, so that a decision on the intrinsic limitations of the evaporated film approach should be made in the near future.

  17. Glass-silicon column

    DOE Patents [OSTI]

    Yu, Conrad M.

    2003-12-30T23:59:59.000Z

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  18. CMOS-compatible Titanium Dioxide Deposition for Athermalization of Silicon Photonic Waveguides

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    CMOS-compatible Titanium Dioxide Deposition for Athermalization of Silicon Photonic Waveguides@ucdavis.edu , sbyoo@ucdavis.edu Abstract: We discuss titanium dioxide material development for CMOS compatible fabrication and integration of athermal silicon photonic components. Titanium dioxide overclad ring modulators

  19. Institute for Critical Technology and Applied Science Seminar Series Silicone Materials for Sustainable

    E-Print Network [OSTI]

    Crawford, T. Daniel

    Institute for Critical Technology and Applied Science Seminar Series Silicone Materials; these goals are critical for the broad adoption of PV globally. Silicone polymers possess key material for Sustainable Energy: Emphasis on Photovoltaic Materials for Module Assembly and Installation with Ann Norris

  20. High field magnetotransport and point contact Andreev reflection measurements on CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br—Degenerate magnetic semiconductor single crystals

    SciTech Connect (OSTI)

    Borisov, K., E-mail: borisovk@tcd.ie; Coey, J. M. D.; Stamenov, P. [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Alaria, J. [Department of Physics, University of Liverpool, Liverpool L69 7ZE (United Kingdom)

    2014-05-07T23:59:59.000Z

    Single crystals of the metallically degenerate fully magnetic semiconductors CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br have been prepared by the Chemical Vapour Transport method, using either Se or Br as transport agents. The high-quality, millimetre-sized, octahedrally faceted, needle- and platelet-shaped crystals are characterised by means of high field magnetotransport (?{sub 0}H? 14?T) and Point Contact Andreev Reflection. The relatively high spin polarisation observed |P|>0.56, together with the relatively low minority carrier effective mass of 0.25 m{sub e}, and long scattering time  10{sup ?13}?s, could poise these materials for integration in low- and close-to-room temperature minority injection bipolar heterojunction transistor demonstrations.

  1. Module Configuration

    DOE Patents [OSTI]

    Oweis, Salah (Ellicott City, MD); D'Ussel, Louis (Bordeaux, FR); Chagnon, Guy (Cockeysville, MD); Zuhowski, Michael (Annapolis, MD); Sack, Tim (Cockeysville, MD); Laucournet, Gaullume (Paris, FR); Jackson, Edward J. (Taneytown, MD)

    2002-06-04T23:59:59.000Z

    A stand alone battery module including: (a) a mechanical configuration; (b) a thermal management configuration; (c) an electrical connection configuration; and (d) an electronics configuration. Such a module is fully interchangeable in a battery pack assembly, mechanically, from the thermal management point of view, and electrically. With the same hardware, the module can accommodate different cell sizes and, therefore, can easily have different capacities. The module structure is designed to accommodate the electronics monitoring, protection, and printed wiring assembly boards (PWAs), as well as to allow airflow through the module. A plurality of modules may easily be connected together to form a battery pack. The parts of the module are designed to facilitate their manufacture and assembly.

  2. Testing Protocol for Module Encapsulant Creep (Presentation)

    SciTech Connect (OSTI)

    Kempe, M. D.; Miller, D. C.; Wohlgemuth, J. H.; Kurtz, S. R.; Moseley, J. M.; Shah, Q.; Tamizhmani, G.; Sakurai, K.; Inoue, M.; Doi, T.; Masuda, A.

    2012-02-01T23:59:59.000Z

    Recently there has been an interest in the use of thermoplastic encapsulant materials in photovoltaic modules to replace chemically crosslinked materials, e.g., ethylene-vinyl acetate. The related motivations include the desire to: reduce lamination time or temperature; use less moisture-permeable materials; or use materials with better corrosion characteristics. However, the use of any thermoplastic material in a high-temperature environment raises safety and performance concerns, as the standardized tests currently do not expose the modules to temperatures in excess of 85C, yet modules may experience temperatures above 100C in operation. Here we constructed eight pairs of crystalline-silicon modules and eight pairs of glass/encapsulation/glass mock modules using different encapsulation materials of which only two were designed to chemically crosslink. One module set was exposed outdoors with insulation on the back side in Arizona in the summer, and an identical set was exposed in environmental chambers. High precision creep measurements and performance measurements indicate that despite many of these polymeric materials being in the melt state at some of the highest outdoor temperatures achievable, very little creep was seen because of their high viscosity, temperature heterogeneity across the modules, and in the case of the crystalline-silicon modules, the physical restraint of the backsheet. These findings have very important implications for the development of IEC and UL qualification and safety standards, and in regards to the necessary level of cure during the processing of crosslinking encapsulants.

  3. Experimental verification of electro-refractive phase modulation in graphene

    E-Print Network [OSTI]

    Mohsin, Muhammad; Schall, Daniel; Otto, Martin; Matheisen, Christopher; Giesecke, Anna Lena; Sagade, Abhay A; Kurz, Heinrich

    2015-01-01T23:59:59.000Z

    Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating a gated graphene layer in a silicon-waveguide based Mach-Zehnder interferometer, the key parameters of a phase modulator like change in effective refractive index, insertion loss and absorption change are extracted. These experimentally obtained values are well reproduced by simulations and design guidelines are provided to make graphene devices competitive to contemporary silicon based phase modulators for on-chip applications.

  4. Silicon rich nitride for silicon based laser devices

    E-Print Network [OSTI]

    Yi, Jae Hyung

    2008-01-01T23:59:59.000Z

    Silicon based light sources, especially laser devices, are the key components required to achieve a complete integrated silicon photonics system. However, the fundamental physical limitation of the silicon material as light ...

  5. Functionalized Silicone Nanospheres: Synthesis, Transition Metal...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Functionalized Silicone Nanospheres: Synthesis, Transition Metal Immobilization, and Catalytic Applications. Functionalized Silicone Nanospheres: Synthesis, Transition Metal...

  6. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, Robert A. (Albuquerque, NM); Seager, Carleton H. (Albuquerque, NM)

    1996-01-01T23:59:59.000Z

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  7. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, R.A.; Seager, C.H.

    1996-12-10T23:59:59.000Z

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  8. Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,

    E-Print Network [OSTI]

    Cui, Yi

    ABSTRACT: Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices solar cell. Additionally, about 26% of the module cost comes from the fabrication processes of a SiHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

  9. Electric field geometries dominate quantum transport coupling in silicon nanoring

    SciTech Connect (OSTI)

    Lee, Tsung-Han, E-mail: askaleeg@gmail.com, E-mail: sfhu.hu@gmail.com; Hu, Shu-Fen, E-mail: askaleeg@gmail.com, E-mail: sfhu.hu@gmail.com [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China)

    2014-03-28T23:59:59.000Z

    Investigations on the relation between the geometries of silicon nanodevices and the quantum phenomenon they exhibit, such as the Aharonov–Bohm (AB) effect and the Coulomb blockade, were conducted. An arsenic doped silicon nanoring coupled with a nanowire by electron beam lithography was fabricated. At 1.47?K, Coulomb blockade oscillations were observed under modulation from the top gate voltage, and a periodic AB oscillation of ?B?=?0.178?T was estimated for a ring radius of 86?nm under a high sweeping magnetic field. Modulating the flat top gate and the pointed side gate was performed to cluster and separate the many electron quantum dots, which demonstrated that quantum confinement and interference effects coexisted in the doped silicon nanoring.

  10. Threshold irradiation dose for amorphization of silicon carbide

    SciTech Connect (OSTI)

    Snead, L.L.; Zinkle, S.J.

    1997-03-01T23:59:59.000Z

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56eV. This model successfully explains the difference in the temperature dependent amorphization behavior of SiC irradiated with 0.56 MeV Si{sup +} at 1 x 10{sup -3} dpa/s and with fission neutrons irradiated at 1 x 10{sup -6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340{+-}10K.

  11. Performance Testing using Silicon Devices - Analysis of Accuracy: Preprint

    SciTech Connect (OSTI)

    Sengupta, M.; Gotseff, P.; Myers, D.; Stoffel, T.

    2012-06-01T23:59:59.000Z

    Accurately determining PV module performance in the field requires accurate measurements of solar irradiance reaching the PV panel (i.e., Plane-of-Array - POA Irradiance) with known measurement uncertainty. Pyranometers are commonly based on thermopile or silicon photodiode detectors. Silicon detectors, including PV reference cells, are an attractive choice for reasons that include faster time response (10 us) than thermopile detectors (1 s to 5 s), lower cost and maintenance. The main drawback of silicon detectors is their limited spectral response. Therefore, to determine broadband POA solar irradiance, a pyranometer calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under clear-sky conditions with respect to a broadband reference radiometer. The pyranometer is then used for various scenarios including varying airmass, panel orientation and atmospheric conditions. This would not be an issue if all irradiance wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately, the scattering and absorption signature varies widely with wavelength and the calibration factor for the silicon photodiode pyranometer is not appropriate for other conditions. This paper reviews the issues that will arise from the use of silicon detectors for PV performance measurement in the field based on measurements from a group of pyranometers mounted on a 1-axis solar tracker. Also we will present a comparison of simultaneous spectral and broadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.

  12. EPR studies of S(M(CO) sub 5 ) sub 2 sup minus radicals (M = Cr, W) trapped in single crystals of PPN sup + HS(M(CO) sub 5 ) sub 2 sup minus

    SciTech Connect (OSTI)

    Hynes, R.C.; Preston, K.F.; Springs, J.J.; Williams, A.J. (National Research Council of Canada, Ottawa, Ontario (Canada))

    1991-01-01T23:59:59.000Z

    Persistent anisotropic EPR spectra detected in {gamma}-irradiated single crystals of PPN{sup +}HSM{sub 2}(CO){sub 10}{sup {minus}} (M = Cr, W) are attributed to the anion radicals produced by loss of a hydrogen atom from the undamaged anions. The g tensors were determined from measurements taken throughout three mutually orthogonal planes of crystallographically aligned single-crystal specimens: g(Cr) = (2.0008, 2.1142, 2.0472); g(W) = (1.9899, 2.2461, 2.0900). X-ray diffractometry showed that the undamaged crystals were isomorphous and belonged to the triclinic space group P{bar 1}. A full structure determination was carried out for the Cr compound only. Cell parameters for the Cr compound are as follows: a = 9.6629 (10) {angstrom}, b = 14.1626 (11) {angstrom}, c = 16.9509 (14) {angstrom}, {alpha} = 78.226 (7){degree}, {beta} = 85.711 (8){degree}, {gamma} = 89.615 (8){degree}, Z = 2. Cell parameters for the W compound are as follows: a = 9.825 (2) {angstrom}, b = 14.097 (4) {angstrom}, c = 17.019 (9) {angstrom}, {alpha} = 78.47 (3){degree}, {beta} = 85.72 (3){degree}, {gamma} = 89.91 (2){degree}. The anion structures showed an approximately octahedral arrangement of five carbonyls and a (shared) sulfur about each metal atom. Carbonyls from opposite ends of the anion are staggered with respect to each other. Cr-S bonds are 2.46 and 2.48 {angstrom} long and 122.8{degree} apart. A good correlation was established for both Cr- and W-containing crystals between principal g values and the M-M direction (maximum g), the bisector of the M-S-M angle (intermediate g), and the perpendicular to the MSM plane (minimum g). The observations are interpreted in terms of a {pi}'-radical structure, analogous to that of SO{sub 2}{sup {minus}} in which unpaired spin density is shared between a S 3p{sub x} orbital directed perpendicular to the CrSCr plane and Cr 3d{sub xz} orbitals.

  13. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran, E-mail: gkova@irb.hr; Pivac, Branko [Department of Materials Physics, Rudjer Boskovic Institute, Bijeni?ka 56, P.O.B. 180, HR-10002 Zagreb (Croatia)

    2014-01-28T23:59:59.000Z

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  14. AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION

    E-Print Network [OSTI]

    Deng, Xunming

    -based polymers (silicones) may not show this effect. Although silicones were used to encapsulate solar cells improved, which may make them suitable for encapsulating solar cells once again. We have recentlyAMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION Aarohi Vijh 1

  15. Optical properties of silicon carbide for astrophysical applications I. New laboratory infrared reflectance spectra and optical constants

    E-Print Network [OSTI]

    Pitman, K M; Corman, A B; Speck, A K

    2008-01-01T23:59:59.000Z

    Silicon Carbide (SiC) optical constants are fundamental inputs for radiative transfer models of astrophysical dust environments. However, previously published values contain errors and do not adequately represent the bulk physical properties of the cubic (beta) SiC polytype usually found around carbon stars. We provide new, uncompromised optical constants for beta- and alpha-SiC derived from single-crystal reflectance spectra and investigate quantitatively whether there is any difference between alpha- and beta-SiC that can be seen in infrared spectra and optical functions. Previous optical constants for SiC do not reflect the true bulk properties, and they are only valid for a narrow grain size range. The new optical constants presented here will allow narrow constraints to be placed on the grain size and shape distribution that dominate in astrophysical environments. In addition, our calculated absorption coefficients are much higher than laboratory measurements, which has an impact on the use of previous d...

  16. Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

    SciTech Connect (OSTI)

    Will, J., E-mail: will@krist.uni-erlangen.de; Gröschel, A.; Bergmann, C.; Magerl, A. [Crystallography and Structural Physics, University of Erlangen-Nürnberg, Staudtstr. 3, 91058 Erlangen (Germany); Spiecker, E. [Center for Nanoanalysis and Electron Microscopy, University of Erlangen-Nürnberg, Cauerstr. 6, 91058 Erlangen (Germany)

    2014-03-28T23:59:59.000Z

    X-ray Pendellösung fringes from three silicon single crystals measured at 900?°C are analyzed with respect to density and size of oxygen precipitates within a diffusion-driven growth model and compared with TEM investigations. It appears that boron doped (p+) material shows a higher precipitate density and a higher strain than moderately (p-) boron crystals. In-situ diffraction reveals a diffusion-driven precipitate growth followed by a second growth regime in both materials. An interpretation of the second growth regime in terms of Ostwald ripening yields surface energy values (around 70?erg/cm{sup 2}) similar to published data. Further, an increased nucleation rate by a factor of ?13 is found in the p+ sample as compared to a p- sample at a nucleation temperature of 450?°C.

  17. Twenty years of service at NBNM - Analysis of Spectrolab module

    SciTech Connect (OSTI)

    DHERE,N.G.; PANDIT,M.B.; GHONGADI,S.R.; QUINTANA,MICHAEL A.; KING,DAVID L.; KRATOCHVIL,JAY A.

    2000-04-11T23:59:59.000Z

    This study of adhesional strength and surface analysis of encapsulant and silicon cell samples from a Natural Bridges National Monument (NBNM) Spectrolab module is an attempt to understand from its success. The module was fabricated using polyvinyl butyral (PVB) as an encapsulant. The average adhesional shear strength of the encapsulant at the cell/encapsulant interface in this module was 4.51 MPa or {approximately} 18% lower than that in currently manufactured modules. Typical encapsulant surface composition was as follows: C 75.0 at.% O 23.2 at.%, and Si 1.6 at.%, with Ag {approximately}0.2 at.% and Pb {approximately} 0.5 at.% with some tin respectively over the grid lines and solder bond. Representative silicon cell surface composition was: K 1.4 at.%, C 20.8 at.%, Sn 0.94 at.%, O 15.1 at.%, Na 2.7 at.% and Si 59.0 at.%. The presence of tin detected on the silicon cell surface may be attributed to corrosion of solder bond. The module differs from typical contemporary modules in the use of PVB, metallic mesh type interconnection, and silicon oxide AR coating.

  18. Characterizing the effects of free carriers in fully-etched, dielectric-clad silicon waveguides

    E-Print Network [OSTI]

    Sharma, Rajat; Lin, Hung-Hsi; Vallini, Felipe; Fainman, Yeshaiahu

    2015-01-01T23:59:59.000Z

    We theoretically characterize the free-carrier plasma dispersion effect in fully-etched silicon waveguides, with various dielectric material claddings, due to fixed and interface charges at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage (C-V) characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain (FDTD) method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively-driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

  19. SiGe electro-absorption modulators for applications at 1550nm

    E-Print Network [OSTI]

    Bernardis, Sarah

    2008-01-01T23:59:59.000Z

    A novel SixGe?-x, electro-absorption modulator design is experimentally demonstrated. The device is waveguide integrated, butt-coupled into high index contrast Si/SiO2 waveguides. 0.75% Silicon concentration in the alloy ...

  20. Synthesis and single-crystal X-ray diffraction studies of new framework substituted type II clathrates, Cs{sub 8}Na{sub 16}Ag{sub x}Ge{sub 136-x} (x<7)

    SciTech Connect (OSTI)

    Beekman, M. [Department of Physics, University of South Florida, 4202 East Fowler Ave., PHY 114, Tampa, FL 33620 (United States); Wong-Ng, W. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Kaduk, J.A. [INEOS Technologies, Naperville, IL 60566 (United States); Shapiro, A. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Nolas, G.S. [Department of Physics, University of South Florida, 4202 East Fowler Ave., PHY 114, Tampa, FL 33620 (United States)], E-mail: gnolas@cas.usf.edu

    2007-03-15T23:59:59.000Z

    New inorganic type II clathrates with Ag atoms substituting for framework Ge atoms, Cs{sub 8}Na{sub 16}Ag{sub x}Ge{sub 136-x} (x=0, 5.9, and 6.7), have been synthesized by reaction of the pure elements at high temperature. Structural refinements have been performed using single crystal X-ray diffraction. The materials crystallize with the cubic type II clathrate crystal structure (space group Fd3-barm) with a=15.49262(9)A, 15.51605(6)A, and 15.51618(9) for x=0, 5.9, and 6.7, respectively, and Z=1. The structure is formed by a covalently bonded Ag-Ge framework, in which the Cs and Na atoms are found inside two types of polyhedral cages. Ag substitutes for Ge in the tetrahedrally bonded framework positions, and was found to preferentially occupy the most asymmetric 96g site. The proven ability to substitute atoms for the germanium framework should offer a route to the synthesis of new compositions of type II clathrates, materials that are of interest for potential thermoelectrics applications.

  1. Laminated photovoltaic modules using back-contact solar cells

    DOE Patents [OSTI]

    Gee, James M. (Albuquerque, NM); Garrett, Stephen E. (Albuquerque, NM); Morgan, William P. (Albuquerque, NM); Worobey, Walter (Albuquerque, NM)

    1999-09-14T23:59:59.000Z

    Photovoltaic modules which comprise back-contact solar cells, such as back-contact crystalline silicon solar cells, positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The module designs allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  2. Strong, Tough Ceramics Containing Microscopic Reinforcements: Tailoring In-Situ Reinforced Silicon Nitride Ceramics

    SciTech Connect (OSTI)

    Becher, P.F.

    1999-06-27T23:59:59.000Z

    Ceramics with their hardness, chemical stability, and refractoriness could be used to design more efficient energy generation and conversion systems as well as numerous other applications. However, we have needed to develop a fundamental understanding of how to tailor ceramics to improve their performance, especially to overcome their brittle nature. One of the advances in this respect was the incorporation of very strong microscopic rod-like reinforcements in the form of whiskers that serve to hold the ceramic together making it tougher and resistant to fracture. This microscopic reinforcement approach has a number of features that are similar to continuous fiber-reinforced ceramics; however, some of the details are modified. For instance, the strengths of the microscopic reinforcements must be higher as they typically have much stronger interfaces. For instance, single crystal silicon carbide whiskers can have tensile strengths in excess of {ge}7 GPa or >2 times that of continuous fibers. Furthermore, reinforcement pullout is limited to lengths of a few microns in the case of microscopic reinforcement due as much to the higher interfacial shear resistance as to the limit of the reinforcement lengths. On the other hand, the microscopic reinforcement approach can be generated in-situ during the processing of ceramics. A remarkable example of this is found in silicon nitride ceramics where elongated rod-like shape grains can be formed when the ceramic is fired at elevated temperatures to form a dense component.

  3. Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser

    SciTech Connect (OSTI)

    Wang Xi; Qin Yuan; Wang Bin; Zhang Liang; Shen Zhonghua; Lu Jian; Ni Xiaowu

    2011-07-20T23:59:59.000Z

    A spatial axisymmetric finite element model of single-crystal silicon irradiated by a 1064 nm millisecond laser is used to investigate the thermal stress damage induced by a millisecond laser. The transient temperature field and the thermal stress field for 2 ms laser irradiation with a laser fluence of 254 J/cm{sup 2} are obtained. The numerical simulation results indicate that the hoop stresses along the r axis on the front surface are compressive stress within the laser spot and convert to tensile stress outside the laser spot, while the radial stresses along the r axis on the front surface and on the z axis are compressive stress. The temperature of the irradiated center is the highest temperature obtained, yet the stress is not always highest during laser irradiation. At the end of the laser irradiation, the maximal hoop stress is located at r=0.5 mm and the maximal radial stress is located at r=0.76 mm. The temperature measurement experiments are performed by IR pyrometer. The numerical result of the temperature field is consistent with the experimental result. The damage morphologies of silicon under the action of a 254 J/cm{sup 2} laser are inspected by optical microscope. The cracks are observed initiating at r=0.5 mm and extending along the radial direction.

  4. Results of I-V Curves and Visual Inspection of PV Modules Deployed at TEP Solar Test Yard (Poster)

    SciTech Connect (OSTI)

    McNutt, P.; Wohlgemuth, J.; Miller, D.; Stoltenberg, B.

    2014-02-01T23:59:59.000Z

    The purpose of the PV Service Life Prediction project is to examine and report on how solar modules are holding up after being in the field for 5 or more years. This poster presents the common problems crystalline-silicon and thin-film modules exhibit, including details of modules from three manufactures that were tested January 13-16, 2014.

  5. Thermionic modules

    DOE Patents [OSTI]

    King, Donald B. (Albuquerque, NM); Sadwick, Laurence P. (Salt Lake City, UT); Wernsman, Bernard R. (Clairton, PA)

    2002-06-18T23:59:59.000Z

    Modules of assembled microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures manufactured using MEMS manufacturing techniques including chemical vapor deposition. The MTCs incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices and modules can be fabricated at modest costs.

  6. Enhanced ferroelectric properties and thermal stability of nonstoichiometric 0.92(Na{sub 0.5}Bi{sub 0.5})TiO{sub 3}-0.08(K{sub 0.5}Bi{sub 0.5})TiO{sub 3} single crystals

    SciTech Connect (OSTI)

    Zhang, Haiwu, E-mail: zhw3789@sina.com, E-mail: hsluo@mail.sic.ac.cn; Chen, Chao; Deng, Hao; Li, Long [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800 (China) [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Zhao, Xiangyong; Lin, Di; Li, Xiaobing; Ren, Bo; Luo, Haosu, E-mail: zhw3789@sina.com, E-mail: hsluo@mail.sic.ac.cn [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800 (China)] [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800 (China); Yan, Jun [Shibei Power Supply Branch, Shanghai Municipal Electric Power Company, Shanghai 200072 (China)] [Shibei Power Supply Branch, Shanghai Municipal Electric Power Company, Shanghai 200072 (China)

    2013-11-18T23:59:59.000Z

    Bi deficient, Mn doped 0.92(Na{sub 0.5}Bi{sub 0.5})TiO{sub 3}-0.08(K{sub 0.5}Bi{sub 0.5})TiO{sub 3} single crystals were grown by carefully controlled top-seeded solution growth method. Local structures were investigated by transmission electron microscopy. The site occupation and valence state of manganese were characterized by electron paramagnetic resonance spectrum. The leakage current density in the as-grown single crystals is effectively depressed. The introduced defect complexes suppress the temperature induced phase transformation, increasing the depolarization temperature (165?°C) and thermal stability of ferroelectric properties.

  7. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    SciTech Connect (OSTI)

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01T23:59:59.000Z

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  8. Photo-effects in iodine single crystals

    E-Print Network [OSTI]

    Rieves, John Michael

    1967-01-01T23:59:59.000Z

    energy distribution for the nsrcury Ianp is sbo?n in pig. 9(c) . No curve ws available for the tuagsten leaps ho?aver, Cbs gsesral profile of tbe spectral energy output is hnoun to folio?a snooth curve ?hicb increases gradually fron ~ vary lo...

  9. Nanostructured Calcite Single Crystals with Gyroid Morphologies

    E-Print Network [OSTI]

    Steiner, Ullrich

    , the unconstrained crystallization of calcium carbonate (CaCO3) leads to the precipitation of brittle rhombohedral of these factors on CaCO3 nucleation and growth, which can also lead to control over polymorph and orientation. It is becoming increas- ingly apparent that the formation of crystalline CaCO3 is often preceded by an amorphous

  10. Electronic conduction through single crystals of polyethylene

    E-Print Network [OSTI]

    Samson, Gerald Maurice

    1966-01-01T23:59:59.000Z

    'iec elec r' c f" cld, ~ J 1 ard ~ne dielectric arc iz. posed. Thi- y'elds the Eichcrcsoz;Schot ! y ccu tion, !"inslly, the Fo' ler-. "!ordhcim ecuat-'on for field ez icsion is sic. tcd ar;d di cussed, ne Sozaaerzcld odc "o" elect;ons in a -etal, thc iz...

  11. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    gas, a reactant involved in many important industrial catalytic processes, including the Fischer-Tropsch process for making liquid hydrocarbons, the oxidation process in...

  12. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPOPetroleum38 (1996) A213-A225. Printed ingunCONTRACT

  13. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPOPetroleum38 (1996) A213-A225. Printed

  14. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPOPetroleum38 (1996) A213-A225. PrintedPlatinum

  15. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPOPetroleum38 (1996) A213-A225. PrintedPlatinumPlatinum

  16. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPOPetroleum38 (1996) A213-A225.

  17. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPOPetroleum38 (1996) A213-A225.Platinum Nanoclusters

  18. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPOPetroleum38 (1996) A213-A225.Platinum

  19. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPOPetroleum38 (1996) A213-A225.PlatinumPlatinum

  20. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)IntegratedSpeeding accessPeptoidLabPhysics PhysicsPlatinum Nanoclusters

  1. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)IntegratedSpeeding accessPeptoidLabPhysics PhysicsPlatinum NanoclustersPlatinum

  2. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)IntegratedSpeeding accessPeptoidLabPhysics PhysicsPlatinum

  3. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)IntegratedSpeeding accessPeptoidLabPhysics PhysicsPlatinumPlatinum Nanoclusters

  4. Inelastic x-ray scattering study of supercooled liquid and solid silicon.

    SciTech Connect (OSTI)

    Alatas, A.; Said, A.; Sinn, H.; Alp, E.E.; Kodituwakku, C.N.; Saboungi, M.L.; Price, D.L.; X-Ray Science Division; Western Michigan Univ.; Purdue Univ.; CRMD-CNRS; CRMHT-CNRS

    2006-01-01T23:59:59.000Z

    Momentum-resolved inelastic x-ray scattering (IXS) technique is one of the powerful methods for the study of dynamical properties of a given system even in extreme conditions like high temperature and high pressure. At the same time, experimental studies of physical and structural properties of liquids have multiplied in recent years with the advent of containerless techniques. These methods reduce the possibility of contamination of specimens and remove external nucleation sites. Therefore, by combining the IXS method with the levitation method, the dynamical properties of stable liquids up to 3000 K and supercooled phase of liquids can be studied. Silicon is a basic material in the semiconductor industry and has been the subject of a large amount of experimental and theoretical studies over a long time. In the crystalline phase at ambient conditions, silicon is a diamond-structured semiconductor, but upon melting it undergoes a semiconductor-to-metal transition accompanied by significant changes in the structure and density. The coordination number increases from 4 in the solid to about 6.5 in the liquid, and liquid density is increased by about 10%. The principal purpose of the present study was to determine silicon's elastic modulus from the measurement of averaged sound speed determined from IXS. The experiments were carried out at the Advanced Photon Source (APS) beamline 3-ID with a high-resolution monochromator consisting of two nested channel-cut crystals and four backscattering analyzer setups in the horizontal scattering plane 6 m from the sample. The requirements for very high energy resolution and the basic principles of such instrumentation are discussed elsewhere as referenced. The levitation apparatus was enclosed in a bell jar specially designed for backscattering geometry with a separation of 10 cm between the sample and the detector. Silicon spheres of 2 to 3 mm in diameter were suspended in an argon gas jet and heated with a 270 W CO{sub 2} laser beam. Temperatures were measured during the experiment with a pyrometer whose operating wavelength was 0.65 {micro}m. The temperature gradient on the sample was estimated to be about +/- 20 K. The energy scans were taken for supercooled-liquid and hot-solid silicon at temperature T=1620 K. Sound velocities were determined from the initial slope of the excitation frequencies. Then, the longitudinal moduli for hotsolid and supercooled-liquid silicon were calculated from L = v{sub L}{sup 2}{rho} using measured velocities. In these calculations, density values were taken from Ohsaka et al. as referenced. Results are presented in Table 1. together with room-temperature, hot-solid single-crystal measurements, and stable-liquid values. Room-temperature longitudinal moduli were calculated from the values of the single-crystal elastic constants. They were measured between 300 K and 870 K. Since there was no phase transition up to temperature 1620 K for hot-solid silicon, it is reasonable to extrapolate these data to 1620 K in order to compare to our results for the hot solid. A significant difference (about 20%) is observed between our measurement and the extrapolated single-crystal value of the longitudinal modulus for solid silicon at temperature 1620K. This reduction of the longitudinal modulus may be an indication of the pre-melting. The factor of more than two change in the elastic modulus between supercooled liquid and hot solid at the same temperature can be attributed to the semiconductor-to-metal transition in silicon associated with melting. Also, the longitudinal modulus of the stable liquid is reported in Table 1. About a 10% difference is observed between the modulus of the supercooled and the stable liquid silicon. This can be interpreted as silicon still maintaining metallic properties with a significant increase in the degree of the directional bonding upon supercooling, as found in the x-ray diffraction and ab initio MD studies. All these results are discussed in reference.

  5. Optical properties of nanostructured silicon-rich silicon dioxide

    E-Print Network [OSTI]

    Stolfi, Michael Anthony

    2006-01-01T23:59:59.000Z

    We have conducted a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization ...

  6. Synthesis of silicon nitride powders in pulsed RF plasmas

    SciTech Connect (OSTI)

    Buss, R.J.; Ho, P. [Sandia National Labs., Albuquerque, NM (United States); Babu, S.V. [Sandia National Labs., Albuquerque, NM (United States)]|[Clarkson Univ., Potsdam, NY (United States). Dept. of Chemical Engineering

    1995-05-01T23:59:59.000Z

    Nanometer size silicon nitride particles are synthesized using a pulsed radio frequency plasma technique. The plasma is modulated with a square-wave on/off cycle of varying period to control size and morphology and to deduce the growth kinetics. In situ laser light scattering and ex situ particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar plasmas which nucleate silicon particles, an initial extremely rapid growth phase is followed by a slower growth rate, approaching the rate of thin film deposition on adjacent flat surfaces. In SiH{sub 4}/NH{sub 3} plasmas, silicon nitride particle size can be tightly controlled by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continual nucleation during the plasma-on period. The observed polydispersity differs dramatically from that reported from other laboratories.

  7. Thermoelectric module

    DOE Patents [OSTI]

    Kortier, William E. (Columbus, OH); Mueller, John J. (Columbus, OH); Eggers, Philip E. (Columbus, OH)

    1980-07-08T23:59:59.000Z

    A thermoelectric module containing lead telluride as the thermoelectric mrial is encapsulated as tightly as possible in a stainless steel canister to provide minimum void volume in the canister. The lead telluride thermoelectric elements are pressure-contacted to a tungsten hot strap and metallurgically bonded at the cold junction to iron shoes with a barrier layer of tin telluride between the iron shoe and the p-type lead telluride element.

  8. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, John W. (Albuquerque, NM)

    1994-01-01T23:59:59.000Z

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  9. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, J.W.

    1994-01-11T23:59:59.000Z

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  10. Thermo-optic photonic crystal light modulator Mark T. Tinkera

    E-Print Network [OSTI]

    Lee, Jeong-Bong

    Thermo-optic photonic crystal light modulator Mark T. Tinkera and Jeong-Bong Lee Department be capable of driving substantial changes in the refractive index through the thermo-optic effect. Since the thermo-optic coefficient of silicon is approximately 2.4 10-4 K-1 over this temperature range

  11. MILESTONES TOWARD 50% EFFICIENT SOLAR CELL MODULES Allen Barnett1

    E-Print Network [OSTI]

    Honsberg, Christiana

    and a new silicon solar cell for the mid-energy photons, all while circumventing existing cost driversMILESTONES TOWARD 50% EFFICIENT SOLAR CELL MODULES Allen Barnett1 , Douglas Kirkpatrick2 LightSpin Technologies ABSTRACT: The Very High Efficiency Solar Cell (VHESC) program is developing

  12. Growth of high-quality GaAs on Ge/Si{sub 1-x}Ge{sub x} on nanostructured silicon substrates

    SciTech Connect (OSTI)

    Vanamu, G.; Datye, A.K.; Dawson, R.; Zaidi, Saleem H. [Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States) and Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Center for High Technology Materials, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Gratings, Inc., 2700 B Broadbent Parkway, NE, Albuquerque, New Mexico 87107 (United States)

    2006-06-19T23:59:59.000Z

    Heteroepitaxial growth of GaAs/Ge/SiGe films on submicrostructured Si substrates is reported. One-dimensional, nanometer-linewidth, submicrometer period features were fabricated in Si substrates using interferometric lithography, reactive ion etching, and wet-chemical etching techniques. The quality of the GaAs layers grown on these structures was investigated using high-resolution x-ray diffraction, transmission electron microscopy, scanning electron microscopy, photoluminescence, and etch pit density measurements. The defect density of GaAs epilayers grown on submicrostructured Si at {approx}6x10{sup 5} cm{sup -2} was two orders of magnitude lower compared with that grown on planar silicon. The optical quality of the GaAs/Ge/SiGe on submicrostructured Si was comparable to that of single crystal GaAs.

  13. Fabrication of porous silicon membranes 

    E-Print Network [OSTI]

    Yue, Wing Kong

    1988-01-01T23:59:59.000Z

    . Porous silicon layer is formed by the local dissolution which is initiated by the surface layer and is promoted by the hindrance layers composed of the silicic acid. Local etching or local dissolution is the cause of forming porous structure... of pores were 25 to 45 A with a mean value of 38 A. Microstructure of porous silicon studied by Besle et al. showed two distinct 17 patterns: the structure pattern of porous silicon film on heavily doped silicon and that on slightly doped silicon [26...

  14. Photovoltaic module and module arrays

    DOE Patents [OSTI]

    Botkin, Jonathan (El Cerrito, CA); Graves, Simon (Berkeley, CA); Lenox, Carl J. S. (Oakland, CA); Culligan, Matthew (Berkeley, CA); Danning, Matt (Oakland, CA)

    2012-07-17T23:59:59.000Z

    A photovoltaic (PV) module including a PV device and a frame. The PV device has a PV laminate defining a perimeter and a major plane. The frame is assembled to and encases the laminate perimeter, and includes leading, trailing, and side frame members, and an arm that forms a support face opposite the laminate. The support face is adapted for placement against a horizontal installation surface, to support and orient the laminate in a non-parallel or tilted arrangement. Upon final assembly, the laminate and the frame combine to define a unitary structure. The frame can orient the laminate at an angle in the range of 3.degree.-7.degree. from horizontal, and can be entirely formed of a polymeric material. Optionally, the arm incorporates integral feature(s) that facilitate interconnection with corresponding features of a second, identically formed PV module.

  15. Photovoltaic module and module arrays

    DOE Patents [OSTI]

    Botkin, Jonathan; Graves, Simon; Lenox, Carl J. S.; Culligan, Matthew; Danning, Matt

    2013-08-27T23:59:59.000Z

    A photovoltaic (PV) module including a PV device and a frame, The PV device has a PV laminate defining a perimeter and a major plane. The frame is assembled to and encases the laminate perimeter, and includes leading, trailing, and side frame members, and an arm that forms a support face opposite the laminate. The support face is adapted for placement against a horizontal installation surface, to support and orient the laminate in a non-parallel or tilted arrangement. Upon final assembly, the laminate and the frame combine to define a unitary structure. The frame can orient the laminate at an angle in the range of 3.degree.-7.degree. from horizontal, and can be entirely formed of a polymeric material. Optionally, the arm incorporates integral feature(s) that facilitate interconnection with corresponding features of a second, identically formed PV module.

  16. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31T23:59:59.000Z

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  17. Hybrid Silicon Evanescent Lasers John E. Bowersa

    E-Print Network [OSTI]

    Bowers, John

    [2]. Finally a 110 nm thick n-doped InP spacer is used as a bonding interface to silicon. The silicon factors of the silicon waveguide and the QWs can be manipulated by the silicon waveguide dimensions silicon waveguide. For the fabricated waveguide dimensions of a 0.7 µm height (H) and 0.6 µm rib

  18. Supported PV module assembly

    DOE Patents [OSTI]

    Mascolo, Gianluigi; Taggart, David F.; Botkin, Jonathan D.; Edgett, Christopher S.

    2013-10-15T23:59:59.000Z

    A supported PV assembly may include a PV module comprising a PV panel and PV module supports including module supports having a support surface supporting the module, a module registration member engaging the PV module to properly position the PV module on the module support, and a mounting element. In some embodiments the PV module registration members engage only the external surfaces of the PV modules at the corners. In some embodiments the assembly includes a wind deflector with ballast secured to a least one of the PV module supports and the wind deflector. An array of the assemblies can be secured to one another at their corners to prevent horizontal separation of the adjacent corners while permitting the PV modules to flex relative to one another so to permit the array of PV modules to follow a contour of the support surface.

  19. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, Rishi (Ithaca, NY); Baik, Sunggi (Ithaca, NY)

    1984-12-11T23:59:59.000Z

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  20. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, R.; Baik, S.

    1984-12-11T23:59:59.000Z

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  1. Making silicon stronger.

    SciTech Connect (OSTI)

    Boyce, Brad Lee

    2010-11-01T23:59:59.000Z

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

  2. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1992-01-01T23:59:59.000Z

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  3. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17T23:59:59.000Z

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  4. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13T23:59:59.000Z

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  5. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01T23:59:59.000Z

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  6. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21T23:59:59.000Z

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  7. Fabrication and properties of microporous silicon

    E-Print Network [OSTI]

    Shao, Jianzhong

    1994-01-01T23:59:59.000Z

    Microporous silicon layers were fabricated by electrochemical etching of single crystalline silicon wafers in HF-ethanol solutions. The pore properties of porous silicon were examined by physical adsorption of nitrogen and the relationship between...

  8. Fabrication and properties of microporous silicon 

    E-Print Network [OSTI]

    Shao, Jianzhong

    1994-01-01T23:59:59.000Z

    Microporous silicon layers were fabricated by electrochemical etching of single crystalline silicon wafers in HF-ethanol solutions. The pore properties of porous silicon were examined by physical adsorption of nitrogen and the relationship between...

  9. Vertical silicon nanowire arrays for gas sensing

    E-Print Network [OSTI]

    Zhao, Hangbo

    2014-01-01T23:59:59.000Z

    The goal of this research was to fabricate and characterize vertically aligned silicon nanowire gas sensors. Silicon nanowires are very attractive for gas sensing applications and vertically aligned silicon nanowires are ...

  10. Fabrication of porous silicon membranes

    E-Print Network [OSTI]

    Yue, Wing Kong

    1988-01-01T23:59:59.000Z

    efficiencies. The silicon difluoride, SiFq, is an unstable substance. It reacts with hydrofluoric acid forming silicic acid (HqSiFs) and hydrogen gas(Hq): SiFs + 2HF ? & SiF4+ Hs, (2) Si F4 + 2 H F ~ Hr Si Fs. In dilute HF solution, silicon can also react.... In step 1, the surface of silicon is covered with fluorine ions. In step 2, when an electric field is applied across the interface, holes move towards the surface. In step 3, some of the holes are trapped at the surface, and they weaken the silicon...

  11. Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide

    SciTech Connect (OSTI)

    Jiang, Weilin; Jung, Hee Joon; Kovarik, Libor; Wang, Zhaoying; Roosendaal, Timothy J.; Zhu, Zihua; Edwards, Danny J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2015-01-01T23:59:59.000Z

    As a candidate material for fusion reactor applications, silicon carbide (SiC) undergoes transmutation reactions under high-energy neutron irradiation with magnesium as the major metallic transmutant; the others include aluminum, beryllium and phosphorus in addition to helium and hydrogen gaseous species. The impact of these transmutants on SiC structural stability is currently unknown. This study uses ion implantation to introduce Mg into SiC. Multiaxial ion-channeling analysis of the as-produced damage state suggests that there are preferred Si <100> interstitial splits. The microstructure of the annealed sample was examined using high-resolution scanning transmission electron microscopy. The results show a high concentration of likely non-faulted tetrahedral voids and possible stacking fault tetrahedra near the damage peak. In addition to lattice distortion, dislocations and intrinsic and extrinsic stacking faults are also observed. Magnesium in 3C-SiC prefers to substitute for Si and it forms precipitates of cubic Mg2Si and tetragonal MgC2. The diffusion coefficient of Mg in 3C-SiC single crystal at 1573 K has been determined to be 3.8±0.4×10e-19 m2/sec.

  12. Beam Test of a Large Area nonn Silicon Strip Detector with Fast Binary Readout Electronics

    E-Print Network [OSTI]

    Beam Test of a Large Area n­on­n Silicon Strip Detector with Fast Binary Readout Electronics Y test was carried out for the non­irradiated and the irradiated detector modules. Efficiency, noise occupancy and performance in the edge regions were analyzed using the beam test data. High efficiency

  13. AN OPTICAL COMPARISON OF SILICONE AND EVA ENCAPSULANTS UNDER VARIOUS SPECTRA

    E-Print Network [OSTI]

    Energy Systems, Australian National University, Canberra, ACT 0200, AUSTRALIA 2 Dow Corning Corporation.mcintosh@anu.edu.au ABSTRACT Under the AM1-5g spectrum, the efficiency of a c-Si module can be increased by 0.5­1.5% (relative less than ~400 nm being transmitted by silicone but blocked by EVA. The highest increase in efficiency

  14. Status and Future of Silicon Photovoltaics Presented at: Renewable energies in the service of humanity: the

    E-Print Network [OSTI]

    Canet, Léonie

    at a time 0.5 watts each $100/watt $200/watt Wafered Silicon Process Polysilicon Wafer Solar Cell Solar companies Oil companies Japanese companies Japanese roof program German FIT #12;0,60 6,00 60,00 1 10 100 Shortage Excess Capacity 81% Progress Ratio Historical Module Price Experience Curve #12;Solar PV History

  15. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1998-06-02T23:59:59.000Z

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  16. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1996-01-30T23:59:59.000Z

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  17. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1996-01-01T23:59:59.000Z

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  18. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1998-06-02T23:59:59.000Z

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  19. Nanoscale Engineering Of Radiation Tolerant Silicon Carbide....

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Of Radiation Tolerant Silicon Carbide. Nanoscale Engineering Of Radiation Tolerant Silicon Carbide. Abstract: Radiation tolerance is determined by how effectively the...

  20. Synthesis of silicon nitride particles in pulsed Rf plasmas

    SciTech Connect (OSTI)

    Buss, R.J.; Babu, S.V.

    1995-11-01T23:59:59.000Z

    Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 Mhz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. In situ laser light scattering and ex situ particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10-100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but non-spherical. Post-plasma oxidation kinetics of the particles are studied with FTIR and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation.

  1. Synthesis of silicon nitride particles in pulsed radio frequency plasmas

    SciTech Connect (OSTI)

    Buss, R.J. [Sandia National Laboratories, Albuquerque, New Mexico 87185-0367 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87185-0367 (United States); Babu, S.V. [Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699-5705 (United States)] [Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699-5705 (United States)

    1996-03-01T23:59:59.000Z

    Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 MHz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. {ital In} {ital situ} laser light scattering and {ital ex} {ital situ} particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10{endash}100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but nonspherical. Postplasma oxidation kinetics of the particles are studied with Fourier transform infrared spectra and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation. {copyright} {ital 1996 American Vacuum Society}

  2. Ballasted photovoltaic module and module arrays

    DOE Patents [OSTI]

    Botkin, Jonathan (El Cerrito, CA); Graves, Simon (Berkeley, CA); Danning, Matt (Oakland, CA)

    2011-11-29T23:59:59.000Z

    A photovoltaic (PV) module assembly including a PV module and a ballast tray. The PV module includes a PV device and a frame. A PV laminate is assembled to the frame, and the frame includes an arm. The ballast tray is adapted for containing ballast and is removably associated with the PV module in a ballasting state where the tray is vertically under the PV laminate and vertically over the arm to impede overt displacement of the PV module. The PV module assembly can be installed to a flat commercial rooftop, with the PV module and the ballast tray both resting upon the rooftop. In some embodiments, the ballasting state includes corresponding surfaces of the arm and the tray being spaced from one another under normal (low or no wind) conditions, such that the frame is not continuously subjected to a weight of the tray.

  3. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15T23:59:59.000Z

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  4. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Mendez, Victor P. (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1988-01-01T23:59:59.000Z

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  5. Ultraviolet selective silicon photodiode

    E-Print Network [OSTI]

    Chintapalli, Koteswara Rao

    1992-01-01T23:59:59.000Z

    (' silicon surfa&(& that n&ost of t h&) phologeneraied hole-el( & tron pairs are k&st by surface rccornbinai ion before being nolle&. trxl hy a pr). jun?i, ion. The major cause of surl'a&. e re?omhination is probably due Io lifetim(. shortening ol' Lhe... drpth corresponded to a high& r shor4wav? length rcsponsiv- ity tlirough liis ( xperimcnial diodes with junction dcpl ha ol'0. -'I to 2 0 pm. I indmayer and Allison [4I] I'abri&. ated n+-p solar cells with junction &lcpths of approximately 0. 1, 0. 15...

  6. Investigations on optoelectronic transition mechanisms of silicon nanoporous pillar array by using surface photovoltage spectroscopy and photoluminescence spectroscopy

    SciTech Connect (OSTI)

    Hu, Zhen-Gang, E-mail: huzhengang@zzu.edu.cn; Tian, Yong-Tao; Li, Xin-Jian [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450001 (China)

    2014-03-28T23:59:59.000Z

    We report the electronic transition mechanisms for hydrothermally prepared silicon nanoporous pillar array (Si-NPA), investigated by surface photovoltage (SPV) spectroscopy and photoluminescence (PL) spectroscopy. By comparing the SPV spectra of single crystal silicon (sc-Si) with that of Si-NPA, the silicon nano-crystallites (nc-Si)/SiO{sub x} nanostructure in the Si-NPA could produce SPV in the wavelength range of 300–580?nm. And 580?nm (?2.14?eV) was considered as the absorption edge of the nc-Si/SiO{sub x} nanostructure. After the sample was annealed and oxidized in air at different temperatures, both the SPV in the wavelength range of 300–580?nm and the PL emission band around 690?nm from the nc-Si/SiO{sub x} nanostructure weakened and disappeared as the annealing temperature increased from 100 to 500?°C. But both the red-infrared PL band (>710?nm) and the violet-blue PL band were enhanced by increasing the annealing temperature. After 2 years of natural oxidation in air, the SPV features for sc-Si disappeared completely, and the SPV characteristics of the nc-Si/SiO{sub x} nanostructure could be clearly observed. After analysis, the Si–O structure related localized states at the nc-Si/SiO{sub x} interface dominated the electronic transitions during the red PL emission and the SPV for the nc-Si/SiO{sub x} nanostructure in Si-NPA, the red–infrared PL was due to the Si=O structure related electronic transitions, and the violet-blue PL emission could attribute to the oxygen-related defect related recombination of the photo induced carriers.

  7. Amorphous silicon/crystalline silicon heterojunctions: The future of high-efficiency silicon solar cells

    E-Print Network [OSTI]

    Firestone, Jeremy

    ;5 Record efficiencies #12;6 Diffused-junction solar cells Diffused-junction solar cell Chemical passivation to ~650 mV #12;7 Silicon heterojunction solar cells a-Si:H provides excellent passivation of c-Si surface Heterojunction solar cell Chemical passivation Chemical passivation #12;8 Voc and silicon heterojunction solar

  8. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

    1999-01-01T23:59:59.000Z

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  9. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

    2002-01-01T23:59:59.000Z

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  10. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOE Patents [OSTI]

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01T23:59:59.000Z

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  11. Silicon nitride ceramic comprising samaria and ytterbia

    DOE Patents [OSTI]

    Yeckley, Russell L. (Oakham, MA)

    1996-01-01T23:59:59.000Z

    This invention relates to a sintered silicon nitride ceramic comprising samaria and ytterbia for enhanced toughness.

  12. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01T23:59:59.000Z

    and Photovoltaic Performance . . . . . . . . . . . . . . .Amorphous Silicon as a Photovoltaic Material 2.1.2ii Photovoltaic Model . . . . . . . . . . .

  13. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15T23:59:59.000Z

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  14. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

    1996-01-01T23:59:59.000Z

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  15. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, D.R.; Brzezinski, M.A.

    1996-06-11T23:59:59.000Z

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidation state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  16. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

    1996-01-01T23:59:59.000Z

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  17. Lithium Ion Battery Performance of Silicon Nanowires With Carbon...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ion Battery Performance of Silicon Nanowires With Carbon Skin . Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin . Abstract: Silicon (Si) nanomaterials have...

  18. Module Technology: Current Practice and Issues (Presentation)

    SciTech Connect (OSTI)

    Wohlgemuth, J.

    2010-10-05T23:59:59.000Z

    PV modules must provide mechanical support for the cells, protect the world from the voltages inside, protect the cells, diodes and interconnects from the weather outside, couple as much light as possible into the PV cells and minimize the temperature increase of the cells. The package must continue to serve these functions for at least 25 years as that is the typical module warranty period today. Furthermore the package must do all this for as low a cost as possible since the key to large scale PV growth is a reduction in cost while retaining excellent module reliability and durability. This paper will review current module construction practices for both crystalline silicon and thin film PV with emphasis on explaining why the present designs and materials have been selected. Possible long term issues with today's designs and materials will be discussed. Several proposed solutions to these issues will be presented, highlighting the research efforts that will be necessary in order to verify that they can cost effectively solve the identified issues.

  19. Polarization manipulation in silicon photonics

    E-Print Network [OSTI]

    Su, Zhan, S.M. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    Silicon photonics is moving fast toward industrialization. It satisfies the increasing demand for higher speed, larger bandwidth communication. Thus it has a wide range of applications including high-performance computing, ...

  20. Photonic and plasmonic guiding modes in graphene-silicon photonic crystals

    E-Print Network [OSTI]

    Gu, Tingyi; Hao, Yufeng; Li, Yilei; Hone, James; Wong, Chee Wei; Lavrinenko, Andrei; Low, Tony; Heinz, Tony F

    2015-01-01T23:59:59.000Z

    We report systematic studies of plasmonic and photonic guiding modes in large-area chemical-vapor-deposition-grown graphene on nanostructured silicon substrates. Light interaction in graphene with substrate photonic crystals can be classified into four distinct regimes depending on the photonic crystal lattice constant and the various modal wavelengths (i.e. plasmonic, photonic and free-space). By optimizing the design of the substrate, these resonant modes can magnify the graphene absorption in infrared wavelength, for efficient modulators, filters, sensors and photodetectors on silicon photonic platforms.

  1. Module Handbook Specialisation Photovoltaics

    E-Print Network [OSTI]

    Habel, Annegret

    Module Handbook Specialisation Photovoltaics 2nd Semester for the Master Programme REMA/EUREC Course 2008/2009 University of Northumbria Specialisation Provider: Photovoltaics #12;Specialisation Photovoltaics, University of Northumbria Module 1/Photovoltaics: PHOTOVOLTAIC CELL

  2. Modulating lignin in plants

    DOE Patents [OSTI]

    Apuya, Nestor; Bobzin, Steven Craig; Okamuro, Jack; Zhang, Ke

    2013-01-29T23:59:59.000Z

    Materials and methods for modulating (e.g., increasing or decreasing) lignin content in plants are disclosed. For example, nucleic acids encoding lignin-modulating polypeptides are disclosed as well as methods for using such nucleic acids to generate transgenic plants having a modulated lignin content.

  3. Optimization of the deposition and annealing conditions of fluorine-doped indium oxide films for silicon solar cells

    SciTech Connect (OSTI)

    Untila, G. G., E-mail: GUntila@mics.msu.su; Kost, T. N.; Chebotareva, A. B.; Timofeyev, M. A. [Moscow State University, Skobel'tsyn Institute of Nuclear Physics (Russian Federation)

    2013-03-15T23:59:59.000Z

    Fluorine-doped indium oxide (IFO) films are deposited onto (pp{sup +})Si and (n{sup +}nn{sup +})Si structures made of single-crystal silicon by ultrasonic spray pyrolysis. The effect of the IFO deposition time and annealing time in an argon atmosphere with methanol vapor on the IFO chemical composition, the photovoltage and fill factor of the Illumination-U{sub oc} curves of IFO/(pp{sup +})Si structures, and the sheet resistance of IFO/(n{sup +}nn{sup +})Si structures, correlating with the IFO/(n{sup +})Si contact resistance, is studied. The obtained features are explained by modification of the properties of the SiO{sub x} transition layer at the IFO/Si interface during deposition and annealing. Analysis of the results made it possible to optimize the fabrication conditions of solar cells based on IFO/(pp{sup +})Si heterostructures and to increase their efficiency from 17% to a record 17.8%.

  4. Optical properties of silicon carbide for astrophysical applications I. New laboratory infrared reflectance spectra and optical constants

    E-Print Network [OSTI]

    K. M. Pitman; A. M. Hofmeister; A. B. Corman; A. K. Speck

    2008-03-10T23:59:59.000Z

    Silicon Carbide (SiC) optical constants are fundamental inputs for radiative transfer models of astrophysical dust environments. However, previously published values contain errors and do not adequately represent the bulk physical properties of the cubic (beta) SiC polytype usually found around carbon stars. We provide new, uncompromised optical constants for beta- and alpha-SiC derived from single-crystal reflectance spectra and investigate quantitatively whether there is any difference between alpha- and beta-SiC that can be seen in infrared spectra and optical functions. Previous optical constants for SiC do not reflect the true bulk properties, and they are only valid for a narrow grain size range. The new optical constants presented here will allow narrow constraints to be placed on the grain size and shape distribution that dominate in astrophysical environments. In addition, our calculated absorption coefficients are much higher than laboratory measurements, which has an impact on the use of previous data to constrain abundances of these dust grains.

  5. 17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating: Preprint

    SciTech Connect (OSTI)

    Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

    2011-07-01T23:59:59.000Z

    In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon 'black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in 'black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

  6. Alignment of the Pixel and SCT Modules for the 2004 ATLAS Combined Test Beam

    SciTech Connect (OSTI)

    ATLAS Collaboration; Ahmad, A.; Andreazza, A.; Atkinson, T.; Baines, J.; Barr, A.J.; Beccherle, R.; Bell, P.J.; Bernabeu, J.; Broklova, Z.; Bruckman de Renstrom, P.A.; Cauz, D.; Chevalier, L.; Chouridou, S.; Citterio, M.; Clark, A.; Cobal, M.; Cornelissen, T.; Correard, S.; Costa, M.J.; Costanzo, D.; Cuneo, S.; Dameri, M.; Darbo, G.; de Vivie, J.B.; Di Girolamo, B.; Dobos, D.; Drasal, Z.; Drohan, J.; Einsweiler, K.; Elsing, M.; Emelyanov, D.; Escobar, C.; Facius, K.; Ferrari, P.; Fergusson, D.; Ferrere, D.; Flick,, T.; Froidevaux, D.; Gagliardi, G.; Gallas, M.; Gallop, B.J.; Gan, K.K.; Garcia, C.; Gavrilenko, I.L.; Gemme, C.; Gerlach, P.; Golling, T.; Gonzalez-Sevilla, S.; Goodrick, M.J.; Gorfine, G.; Gottfert, T.; Grosse-Knetter, J.; Hansen, P.H.; Hara, K.; Hartel, R.; Harvey, A.; Hawkings, R.J.; Heinemann, F.E.W.; Henss, T.; Hill, J.C.; Huegging, F.; Jansen, E.; Joseph, J.; Unel, M. Karagoz; Kataoka, M.; Kersten, S.; Khomich, A.; Klingenberg, R.; Kodys, P.; Koffas, T.; Konstantinidis, N.; Kostyukhin, V.; Lacasta, C.; Lari, T.; Latorre, S.; Lester, C.G.; Liebig, W.; Lipniacka, A.; Lourerio, K.F.; Mangin-Brinet, M.; Marti i Garcia, S.; Mathes, M.; Meroni, C.; Mikulec, B.; Mindur, B.; Moed, S.; Moorhead, G.; Morettini, P.; Moyse, E.W.J.; Nakamura, K.; Nechaeva, P.; Nikolaev, K.; Parodi, F.; Parzhitskiy, S.; Pater, J.; Petti, R.; Phillips, P.W.; Pinto, B.; Poppleton, A.; Reeves, K.; Reisinger, I.; Reznicek, P.; Risso, P.; Robinson, D.; Roe, S.; Rozanov, A.; Salzburger, A.; Sandaker, H.; Santi, L.; Schiavi, C.; Schieck, J.; Schultes, J.; Sfyrla, A.; Shaw, C.; Tegenfeldt, F.; Timmermans, C.J.W.P.; Toczek, B.; Troncon, C.; Tyndel, M.; Vernocchi, F.; Virzi, J.; Anh, T. Vu; Warren, M.; Weber, J.; Weber, M.; Weidberg, A.R.; Weingarten, J.; Wellsf, P.S.; Zhelezkow, A.

    2008-06-02T23:59:59.000Z

    A small set of final prototypes of the ATLAS Inner Detector silicon tracking system(Pixel Detector and SemiConductor Tracker), were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated using the known momenta of the beam particles and were shown to yield consistent results among the different alignment approaches. From the residual distributions, it is concluded that the precision attained in the alignmentof the silicon modules is of the order of 5 mm in their most precise coordinate.

  7. Intel Corporation CREOL April 1 2005 SiliconSilicon PhotonicsPhotonics

    E-Print Network [OSTI]

    Van Stryland, Eric

    Recent resultsRecent results ­­IntelIntel''s Silicon Lasers Silicon Laser SummarySummary #12;*Third party of their respective ownerve owner 44 Industry standard silicon manufacturing processes couldIndustry standard silicon manufacturing processes could enable integration, bring volume economics to optical.enable integration, bring

  8. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01T23:59:59.000Z

    hydrogen dilution in silane on light induced degradation of hydrogenated amor- phous silicon films for solar photovoltaichydrogen content from 14-22%[76]. Hydrogenated amorphous silicon has promise as a photovoltaic

  9. Design of a silicon waver breaker

    E-Print Network [OSTI]

    Mukaddam, Kabir James, 1983-

    2005-01-01T23:59:59.000Z

    Usually multiple MEMS or IC devices are fabricated on a single silicon wafer. Manually separating the components from each other involves scribing and fracturing the silicon. This thesis presents a design for a tool to aid ...

  10. Nucleation and solidification of silicon for photovoltaics

    E-Print Network [OSTI]

    Appapillai, Anjuli T. (Anjuli Tara)

    2010-01-01T23:59:59.000Z

    The majority of solar cells produced today are made with crystalline silicon wafers, which are typically manufactured by growing a large piece of silicon and then sawing it into ~200 pm wafers, a process which converts ...

  11. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, J.L.

    1996-07-23T23:59:59.000Z

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  12. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA)

    1996-01-01T23:59:59.000Z

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  13. Segmented scintillation detectors with silicon photomultiplier readout for measuring antiproton annihilations

    SciTech Connect (OSTI)

    Sótér, A., E-mail: anna.soter@mpq.mpg.de [Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Strasse 1, D-85748 Garching (Germany); Todoroki, K.; Kobayashi, T. [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)] [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Barna, D. [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan) [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Wigner Research Center of Physics, H-1525 Budapest (Hungary); Horváth, D. [Wigner Research Center of Physics, H-1525 Budapest (Hungary)] [Wigner Research Center of Physics, H-1525 Budapest (Hungary); Hori, M. [Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Strasse 1, D-85748 Garching (Germany) [Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Strasse 1, D-85748 Garching (Germany); Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

    2014-02-15T23:59:59.000Z

    The Atomic Spectroscopy and Collisions Using Slow Antiprotons experiment at the Antiproton Decelerator (AD) facility of CERN constructed segmented scintillators to detect and track the charged pions which emerge from antiproton annihilations in a future superconducting radiofrequency Paul trap for antiprotons. A system of 541 cast and extruded scintillator bars were arranged in 11 detector modules which provided a spatial resolution of 17 mm. Green wavelength-shifting fibers were embedded in the scintillators, and read out by silicon photomultipliers which had a sensitive area of 1 × 1 mm{sup 2}. The photoelectron yields of various scintillator configurations were measured using a negative pion beam of momentum p ? 1 GeV/c. Various fibers and silicon photomultipliers, fiber end terminations, and couplings between the fibers and scintillators were compared. The detectors were also tested using the antiproton beam of the AD. Nonlinear effects due to the saturation of the silicon photomultiplier were seen at high annihilation rates of the antiprotons.

  14. Silicon crystal growing by oscillating crucible technique

    DOE Patents [OSTI]

    Schwuttke, G.H.; Kim, K.M.; Smetana, P.

    1983-08-03T23:59:59.000Z

    A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.

  15. Copper doped polycrystalline silicon solar cell

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

    1981-01-01T23:59:59.000Z

    Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

  16. Silicon Micromachined Dimensional Calibration Artifact for Mesoscale...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Micromachined Dimensional Calibration Artifact for Mesoscale Measurement Machines 1 Silicon Micromachined Dimensional Calibration Artifact for Mesoscale Measurement Machines 2...

  17. Birefringence Measurements on Crystalline Silicon

    E-Print Network [OSTI]

    Krüger, Christoph; Khalaidovski, Alexander; Steinlechner, Jessica; Nawrodt, Ronny; Schnabel, Roman; Lück, Harald

    2015-01-01T23:59:59.000Z

    Crystalline silicon has been proposed as a new test mass material in third generation gravitational wave detectors such as the Einstein Telescope (ET). Birefringence can reduce the interferometric contrast and can produce dynamical disturbances in interferometers. In this work we use the method of polarisation-dependent resonance frequency analysis of Fabry-Perot-cavities containing silicon as a birefringent medium. Our measurements show a birefringence of silicon along the (111) axis of the order of $\\Delta\\, n \\approx 10^{-7}$ at a laser wavelength of 1550nm and room temperature. A model is presented that explains the results of different settings of our measurements as a superposition of elastic strains caused by external stresses in the sample and plastic strains possibly generated during the production process. An application of our theory on the proposed ET test mass geometry suggests no critical effect on birefringence due to elastic strains.

  18. Process of preparing tritiated porous silicon

    DOE Patents [OSTI]

    Tam, S.W.

    1997-02-18T23:59:59.000Z

    A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

  19. Process of preparing tritiated porous silicon

    DOE Patents [OSTI]

    Tam, Shiu-Wing (Downers Grove, IL)

    1997-01-01T23:59:59.000Z

    A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

  20. Laser wafering for silicon solar.

    SciTech Connect (OSTI)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01T23:59:59.000Z

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  1. Polycrystalline thin-film solar cells and modules

    SciTech Connect (OSTI)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01T23:59:59.000Z

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  2. Polycrystalline thin-film solar cells and modules

    SciTech Connect (OSTI)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01T23:59:59.000Z

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  3. Approved Module Information for EE4017, 2014/5 Module Title/Name: Realtime Communication Networks Module Code: EE4017

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Module Code: EE4017 School: Engineering and Applied Science Module Type: Standard Module New Module development #12;Indicative Module Content: Telecommunication systems: Network structures; national & Teaching Rationale: Lectures, tutorials and directed reading. Module Assessment Methods of Assessment

  4. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices

    SciTech Connect (OSTI)

    Martin U. Pralle; James E. Carey

    2010-07-31T23:59:59.000Z

    SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

  5. Effects of neutron radiation on power silicon diodes at low temperatures

    E-Print Network [OSTI]

    English, Kevin Joseph

    1991-01-01T23:59:59.000Z

    pulse. After [IO]. The mechanism that describes this short ? term annealing behavior is that of the electron assisted self migration of the silicon interstitials. The total energy calculation of this mechanism was performed by Bar ? Yam.... The failure mechanism of the devices is found to be the loss of conductivity modulation in the base region of the device, caused primarily by a neutron induced degradation of the carrier lifetime. ACKNOW' GEMENT I would like to thank Karin Richeson...

  6. Bracket for photovoltaic modules

    DOE Patents [OSTI]

    Ciasulli, John; Jones, Jason

    2014-06-24T23:59:59.000Z

    Brackets for photovoltaic ("PV") modules are described. In one embodiment, a saddle bracket has a mounting surface to support one or more PV modules over a tube, a gusset coupled to the mounting surface, and a mounting feature coupled to the gusset to couple to the tube. The gusset can have a first leg and a second leg extending at an angle relative to the mounting surface. Saddle brackets can be coupled to a torque tube at predetermined locations. PV modules can be coupled to the saddle brackets. The mounting feature can be coupled to the first gusset and configured to stand the one or more PV modules off the tube.

  7. FASTBUS Snoop Diagnostic Module

    SciTech Connect (OSTI)

    Walz, H.V.; Downing, R.

    1980-11-01T23:59:59.000Z

    Development of the FASTBUS Snoop Module, undertaken as part of the prototype program for the new interlaboratory data bus standard, is described. The Snoop Module resides on a FASTBUS crate segment and provides diagnostic monitoring and testing capability. Communication with a remote host computer is handled independent of FASTBUS through a serial link. The module consists of a high-speed ECL front-end to monitor and single-step FASTBUS cycles, a master-slave interface, and a control microprocessor with serial communication ports. Design details and performance specifications of the prototype module are reported. 9 figures, 1 table.

  8. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

    1997-01-01T23:59:59.000Z

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  9. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06T23:59:59.000Z

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  10. Approved Module Information for CE4020, 2014/5 Module Title/Name: Advanced Mass Trasfer Module Code: CE4020

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    : CE4020 School: Engineering and Applied Science Module Type: Standard Module New Module? No ModuleApproved Module Information for CE4020, 2014/5 Module Title/Name: Advanced Mass Trasfer Module Code Credits: 10 Module Management Information Module Leader Name Qingchun Yuan Email Address q

  11. Approved Module Information for CS1240, 2014/5 Module Title/Name: Internet Computing Module Code: CS1240

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    : CS1240 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module and applications for working with them. Module Learning Outcomes: At the end of the module, students should be ableApproved Module Information for CS1240, 2014/5 Module Title/Name: Internet Computing Module Code

  12. Approved Module Information for LT1307, 2014/5 Module Title/Name: Principles of Economics Module Code: LT1307

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Code: LT1307 School: Engineering and Applied Science Module Type: Standard Module New Module? No ModuleApproved Module Information for LT1307, 2014/5 Module Title/Name: Principles of Economics Module Credits: 10 Module Management Information Module Leader Name David Carpenter Email Address d

  13. Approved Module Information for ME3039, 2014/5 Module Title/Name: Design Failure Analysis Module Code: ME3039

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Code: ME3039 School: Engineering and Applied Science Module Type: Standard Module New Module? No ModuleApproved Module Information for ME3039, 2014/5 Module Title/Name: Design Failure Analysis Module Credits: 10 Module Management Information Module Leader Name David Upton Email Address uptondp

  14. Approved Module Information for CS1320, 2014/5 Module Title/Name: Problem Solving Module Code: CS1320

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    1320 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module CreditsApproved Module Information for CS1320, 2014/5 Module Title/Name: Problem Solving Module Code: CS: 10 Module Management Information Module Leader Name Errol Thompson Email Address thompel1@aston

  15. Approved Module Information for LT3315, 2014/5 Module Title/Name: International Trade Law Module Code: LT3315

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Code: LT3315 School: Engineering and Applied Science Module Type: Standard Module New Module? No ModuleApproved Module Information for LT3315, 2014/5 Module Title/Name: International Trade Law Module Credits: 10 Module Management Information Module Leader Name David Carpenter Email Address d

  16. Approved Module Information for PH4705, 2014/5 Module Title/Name: Interprofessional Learning Module Code: PH4705

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Code: PH4705 School: Life and Health Sciences Module Type: Standard Module New Module? No ModuleApproved Module Information for PH4705, 2014/5 Module Title/Name: Interprofessional Learning Module Credits: 10 Module Management Information Module Leader Name Fiona Lacey Email Address f

  17. Approved Module Information for CS4810, 2014/5 Module Title/Name: Enterprise Computing Systems Module Code: CS4810

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Module Code: CS4810 School: Engineering and Applied Science Module Type: Standard Module New ModuleApproved Module Information for CS4810, 2014/5 Module Title/Name: Enterprise Computing Systems? No Module Credits: 15 Module Management Information Module Leader Name Albert Hai Zhuge Email Address zhugeh

  18. Narrow band gap amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.; Mahan, A.H.

    1985-01-10T23:59:59.000Z

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  19. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, D.S.; Basore, P.A.; Schubert, W.K.

    1998-08-11T23:59:59.000Z

    A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

  20. Dispersion toughened silicon carbon ceramics

    DOE Patents [OSTI]

    Wei, G.C.

    1984-01-01T23:59:59.000Z

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  1. Microelectromechanical pump utilizing porous silicon

    DOE Patents [OSTI]

    Lantz, Jeffrey W. (Albuquerque, NM); Stalford, Harold L. (Norman, OK)

    2011-07-19T23:59:59.000Z

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  2. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

    1998-08-11T23:59:59.000Z

    A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

  3. Kerfless Silicon Precursor Wafer Formed by Rapid Solidification: October 2009 - March 2010

    SciTech Connect (OSTI)

    Lorenz, A.

    2011-06-01T23:59:59.000Z

    1366 Direct Wafer technology is an ultra-low-cost, kerfless method of producing crystalline silicon wafers compatible with the existing dominant silicon PV supply chain. By doubling utilization of silicon and simplifying the wafering process and equipment, Direct Wafers will support drastic reductions in wafer cost and enable module manufacturing costs < $1/W. This Pre-Incubator subcontract enabled us to accelerate the critical advances necessary to commercialize the technology by 2012. Starting from a promising concept that was initially demonstrated using a model material, we built custom equipment necessary to validate the process in silicon, then developed sufficient understanding of the underlying physics to successfully fabricate wafers meeting target specifications. These wafers, 50 mm x 50 mm x 200 ..mu..m thick, were used to make prototype solar cells via standard industrial processes as the project final deliverable. The demonstrated 10% efficiency is already impressive when compared to most thin films, but still offers considerable room for improvement when compared to typical crystalline silicon solar cells.

  4. Membrane module assembly

    DOE Patents [OSTI]

    Kaschemekat, Jurgen (Palo Alto, CA)

    1994-01-01T23:59:59.000Z

    A membrane module assembly adapted to provide a flow path for the incoming feed stream that forces it into prolonged heat-exchanging contact with a heating or cooling mechanism. Membrane separation processes employing the module assembly are also disclosed. The assembly is particularly useful for gas separation or pervaporation.

  5. Module Safety Issues (Presentation)

    SciTech Connect (OSTI)

    Wohlgemuth, J.

    2012-02-01T23:59:59.000Z

    Description of how to make PV modules so that they are less likely to turn into safety hazards. Making modules inherently safer with minimum additional cost is the preferred approach for PV. Safety starts with module design to ensure redundancy within the electrical circuitry to minimize open circuits and proper mounting instructions to prevent installation related ground faults. Module manufacturers must control the raw materials and processes to ensure that that every module is built like those qualified through the safety tests. This is the reason behind the QA task force effort to develop a 'Guideline for PV Module Manufacturing QA'. Periodic accelerated stress testing of production products is critical to validate the safety of the product. Combining safer PV modules with better systems designs is the ultimate goal. This should be especially true for PV arrays on buildings. Use of lower voltage dc circuits - AC modules, DC-DC converters. Use of arc detectors and interrupters to detect arcs and open the circuits to extinguish the arcs.

  6. Membrane module assembly

    DOE Patents [OSTI]

    Kaschemekat, J.

    1994-03-15T23:59:59.000Z

    A membrane module assembly is described which is adapted to provide a flow path for the incoming feed stream that forces it into prolonged heat-exchanging contact with a heating or cooling mechanism. Membrane separation processes employing the module assembly are also disclosed. The assembly is particularly useful for gas separation or pervaporation. 2 figures.

  7. Photovoltaic module and interlocked stack of photovoltaic modules

    SciTech Connect (OSTI)

    Wares, Brian S.

    2014-09-02T23:59:59.000Z

    One embodiment relates to an arrangement of photovoltaic modules configured for transportation. The arrangement includes a plurality of photovoltaic modules, each photovoltaic module including a frame. A plurality of individual male alignment features and a plurality of individual female alignment features are included on each frame. Adjacent photovoltaic modules are interlocked by multiple individual male alignment features on a first module of the adjacent photovoltaic modules fitting into and being surrounded by corresponding individual female alignment features on a second module of the adjacent photovoltaic modules. Other embodiments, features and aspects are also disclosed.

  8. ModuleModuleModuleModule NameNameNameName : Biostatistics Module NumberModule NumberModule NumberModule Number : 210235

    E-Print Network [OSTI]

    for the above types of confidence intervals and tests. Contribution to Program Learning Outcomes). Learning Outcomes:Learning Outcomes:Learning Outcomes:Learning Outcomes: On completing this module, student:Contribution to Program Learning Outcomes:Contribution to Program Learning Outcomes:Contribution to Program Learning

  9. Polar nanoregions and dielectric properties in high-strain lead-free 0.93(Bi{sub 1/2}Na{sub 1/2})TiO{sub 3}-0.07BaTiO{sub 3} piezoelectric single crystals

    SciTech Connect (OSTI)

    Chen, Cheng-Sao, E-mail: rickchen@cc.hwh.edu.tw [Department of Mechanical Engineering, Hwa-Hsia Institute of Technology, New Taipei City 23567, Taiwan (China); Chen, Pin-Yi [Department of Mechanical Engineering, Ming-Chi University of Technology, New Taipei City 24301, Taiwan (China); Tu, Chi-Shun [Graduate Institute of Applied Science and Engineering, Fu Jen Catholic University, New Taipei City 24205, Taiwan (China)

    2014-01-07T23:59:59.000Z

    A structural coexistence of rhombohedral (R) and tetragonal (T) phases has been revealed in the (001){sub c}-cut lead-free 0.93(Bi{sub 1/2}Na{sub 1/2})TiO{sub 3}–0.07BaTiO{sub 3} (BNB7T) piezoelectric crystals, which grown by the self-flux method, in the lower temperatures by high-resolution synchrotron X-ray diffraction, reciprocal space mapping, and transmission electron microscopy. The dielectric permittivity exhibits a thermal hysteresis in the region of 120–260?°C, implying a first-order-like phase transition from R+T to T. The real part (??) of dielectric permittivity begins to deviates from the Curie-Weiss equation, ???=?C/(T ? T{sub o}), from the Burns temperature T{sub B}?=?460?°C, below which the polar nanoregions (or nanoclusters) develop and attenuate dielectric responses. The polar nanoregions of 5–10?nm were revealed by high-resolution transmission electron microscope. The normal piezoelectric coefficient d{sub 33} exhibits a rapid increase at E?=?15–20?kV/cm and reaches a maximum of d{sub 33} ?450 pC/N. The high piezoelectric response and E-field induced strain in BNB7T single crystals can be attributed to structural phase transitions under an E-field application.

  10. Amorphous silicon passivated contacts for diffused junction silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J., E-mail: james.bullock@anu.edu.au; Yan, D.; Wan, Y.; Cuevas, A. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [École Polytechnique Fédérale de Lausanne (EPFL), Institute of micro engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory, Maladière 71, CH-200 Neuchâtel (Switzerland)

    2014-04-28T23:59:59.000Z

    Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

  11. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    E-Print Network [OSTI]

    Mailoa, Jonathan P.

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband ...

  12. Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

    E-Print Network [OSTI]

    Isaacson, David M.

    We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...

  13. Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon 

    E-Print Network [OSTI]

    Lee, I-Syuan

    2014-05-07T23:59:59.000Z

    optimized. The novel nickel-induced crystallization with low thermal budget was demonstrated. Polycrystalline silicon thin films were formed from the amorphous silicon thin films by the pulsed rapid thermal annealing process enhanced with a thin nickel...

  14. Water heater control module

    DOE Patents [OSTI]

    Hammerstrom, Donald J

    2013-11-26T23:59:59.000Z

    An advanced electric water heater control system that interfaces with a high temperature cut-off thermostat and an upper regulating thermostat. The system includes a control module that is electrically connected to the high-temperature cut-off thermostat and the upper regulating thermostat. The control module includes a switch to open or close the high-temperature cut-off thermostat and the upper regulating thermostat. The control module further includes circuitry configured to control said switch in response to a signal selected from the group of an autonomous signal, a communicated signal, and combinations thereof.

  15. Sonication standard laboratory module

    DOE Patents [OSTI]

    Beugelsdijk, Tony (Los Alamos, NM); Hollen, Robert M. (Los Alamos, NM); Erkkila, Tracy H. (Los Alamos, NM); Bronisz, Lawrence E. (Los Alamos, NM); Roybal, Jeffrey E. (Santa Fe, NM); Clark, Michael Leon (Menan, ID)

    1999-01-01T23:59:59.000Z

    A standard laboratory module for automatically producing a solution of cominants from a soil sample. A sonication tip agitates a solution containing the soil sample in a beaker while a stepper motor rotates the sample. An aspirator tube, connected to a vacuum, draws the upper layer of solution from the beaker through a filter and into another beaker. This beaker can thereafter be removed for analysis of the solution. The standard laboratory module encloses an embedded controller providing process control, status feedback information and maintenance procedures for the equipment and operations within the standard laboratory module.

  16. Approved Module Information for PD1803, 2014/5 Module Title/Name: Engineering Principles Module Code: PD1803

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Code: PD1803 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module.i.smith@aston.ac.uk Telephone Number 3610 Office MB156C Additional Module Tutor(s): Michael David Peters. David Barry. LevelApproved Module Information for PD1803, 2014/5 Module Title/Name: Engineering Principles Module

  17. Approved Module Information for CH2107, 2014/5 Module Title/Name: Physical Chemistry II Module Code: CH2107

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    : CH2107 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module. ----- [Part 2: Physical Chemistry Laboratory]; Building on material from a number of modules in the 1st and 2Approved Module Information for CH2107, 2014/5 Module Title/Name: Physical Chemistry II Module Code

  18. Approved Module Information for EM4003, 2014/5 Module Title/Name: Project Management Module Code: EM4003

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    : EM4003 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module. Links to Research: The module will link to the work of the Project and Supply Chain Management ResearchApproved Module Information for EM4003, 2014/5 Module Title/Name: Project Management Module Code

  19. Approved Module Information for LT1312, 2014/5 Module Title/Name: Literature Review Project Module Code: LT1312

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Code: LT1312 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Rationale: Lectures/tutorials Guided reading according to issue chosen Module Assessment MethodsApproved Module Information for LT1312, 2014/5 Module Title/Name: Literature Review Project Module

  20. Approved Module Information for ME1601, 2014/5 Module Title/Name: Engineering Science Module Code: ME1601

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for ME1601, 2014/5 Module Title/Name: Engineering Science Module Code: ME1601 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module@aston.ac.uk Telephone Number Not Specified Office Not Specified Additional Module Tutor(s): David Smith. Abul Hossain

  1. Approved Module Information for PD2003, 2014/5 Module Title/Name: Engineering Principles 2 Module Code: PD2003

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for PD2003, 2014/5 Module Title/Name: Engineering Principles 2 Module Code: PD2003 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module.i.smith@aston.ac.uk Telephone Number 3610 Office MB156C Additional Module Tutor(s): Michael David Peters. David Barry. Level

  2. Approved Module Information for CS4840, 2014/5 Module Title/Name: Software Architecture Module Code: CS4840

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    : CS4840 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module, directed reading, formative assignments, practical project-based work Module Assessment MethodsApproved Module Information for CS4840, 2014/5 Module Title/Name: Software Architecture Module Code

  3. Approved Module Information for ME3011, 2014/5 Module Title/Name: Thermodynamics and Fluids Module Code: ME3011

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Code: ME3011 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Modules/ Exempt from Anonymous Marking Details Assessment Weight EXAM TOTAL Closed Book 2:00hrs - 80Approved Module Information for ME3011, 2014/5 Module Title/Name: Thermodynamics and Fluids Module

  4. The CDF silicon vertex trigger

    SciTech Connect (OSTI)

    B. Ashmanskas; A. Barchiesi; A. Bardi

    2003-06-23T23:59:59.000Z

    The CDF experiment's Silicon Vertex Trigger is a system of 150 custom 9U VME boards that reconstructs axial tracks in the CDF silicon strip detector in a 15 {mu}sec pipeline. SVT's 35 {mu}m impact parameter resolution enables CDF's Level 2 trigger to distinguish primary and secondary particles, and hence to collect large samples of hadronic bottom and charm decays. We review some of SVT's key design features. Speed is achieved with custom VLSI pattern recognition, linearized track fitting, pipelining, and parallel processing. Testing and reliability are aided by built-in logic state analysis and test-data sourcing at each board's input and output, a common inter-board data link, and a universal ''Merger'' board for data fan-in/fan-out. Speed and adaptability are enhanced by use of modern FPGAs.

  5. The ATLAS Silicon Pixel Sensors

    E-Print Network [OSTI]

    Alam, M S; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Andreazza, A; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Musico, P; Osculati, B; Parodi, F; Rossi, L; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Aleppo, M; Caccia, M; Ragusa, F; Troncon, C; Lutz, Gerhard; Richter, R H; Rohe, T; Brandl, A; Gorfine, G; Hoeferkamp, M; Seidel, SC; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; D'Auria, S; del Papa, C; Charles, E; Fasching, D; Becks, K H; Lenzen, G; Linder, C

    2001-01-01T23:59:59.000Z

    Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.

  6. Off-axis silicon carbide substrates

    DOE Patents [OSTI]

    Edgar, James; Dudley, Michael; Kuball, Martin; Zhang, Yi; Wang, Guan; Chen, Hui; Zhang, Yu

    2014-09-02T23:59:59.000Z

    A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.

  7. Diamond-silicon carbide composite and method

    DOE Patents [OSTI]

    Zhao, Yusheng (Los Alamos, NM)

    2011-06-14T23:59:59.000Z

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  8. Process for strengthening silicon based ceramics

    SciTech Connect (OSTI)

    Kim, Hyoun-Ee; Moorhead, A.J.

    1991-03-07T23:59:59.000Z

    A process for strengthening silicon based ceramic monolithic materials and composite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400{degrees}C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts, or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  9. Silicon Sheets By Redox Assisted Chemical Exfoliation

    E-Print Network [OSTI]

    Tchalala, Mohamed Rachid; Enriquez, Hanna; Kara, Abdelkader; Lachgar, Abdessadek; Yagoubi, Said; Foy, Eddy; Vega, Enrique; Bendounan, Azzedine; Silly, Mathieu G; Sirotti, Fausto; Nitshe, Serge; Chaudanson, Damien; Jamgotchian, Haik; Aufray, Bernard; Mayne, Andrew J; Dujardin, Gérald; Oughaddou, Hamid

    2013-01-01T23:59:59.000Z

    In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon sheets show a 2-dimensional hexagonal graphitic structure.

  10. Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion of Tin. Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion of Tin. Abstract: Silicon (Si) has a...

  11. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  12. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOE Patents [OSTI]

    Natesan, K.

    1992-01-01T23:59:59.000Z

    This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

  13. Absorbance modulation optical lithography

    E-Print Network [OSTI]

    Tsai, Hsin-Yu Sidney

    2007-01-01T23:59:59.000Z

    In this thesis, the concept of absorbance-modulation optical lithography (AMOL) is described, and the feasibility experimentally verified. AMOL is an implementation of nodal lithography, which is not bounded by the diffraction ...

  14. GREET Pretreatment Module

    SciTech Connect (OSTI)

    Adom, Felix K.; Dunn, Jennifer B.; Han, Jeongwoo

    2014-09-01T23:59:59.000Z

    A wide range of biofuels and biochemicals can be produced from biomass via different pretreatment technologies that yield sugars. This report documents the material and energy flows that occur when fermentable sugars from four lignocellulosic feedstocks (corn stover, miscanthus, switchgrass, and poplar) are produced via dilute acid pretreatment and ammonia fiber expansion. These flows are documented for inclusion in the pretreatment module of the Greenhouses Gases, Regulated Emissions, and Energy Use in Transportation (GREET) model. Process simulations of each pretreatment technology were developed in Aspen Plus. Material and energy consumption data from Aspen Plus were then compiled in the GREET pretreatment module. The module estimates the cradle-to-gate fossil energy consumption (FEC) and greenhouse gas (GHG) emissions associated with producing fermentable sugars. This report documents the data and methodology used to develop this module and the cradle-to-gate FEC and GHG emissions that result from producing fermentable sugars.

  15. Digital optical conversion module

    DOE Patents [OSTI]

    Kotter, D.K.; Rankin, R.A.

    1988-07-19T23:59:59.000Z

    A digital optical conversion module used to convert an analog signal to a computer compatible digital signal including a voltage-to-frequency converter, frequency offset response circuitry, and an electrical-to-optical converter. Also used in conjunction with the digital optical conversion module is an optical link and an interface at the computer for converting the optical signal back to an electrical signal. Suitable for use in hostile environments having high levels of electromagnetic interference, the conversion module retains high resolution of the analog signal while eliminating the potential for errors due to noise and interference. The module can be used to link analog output scientific equipment such as an electrometer used with a mass spectrometer to a computer. 2 figs.

  16. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01T23:59:59.000Z

    decline in photovoltaic efficiency is less dramatic, butefficiency ? = V OC I ?j SC Amorphous Silicon-Carbon Nanostructure So- lar Cells For this thesis, I made photovoltaic

  17. Silicon Materials and Devices (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-06-01T23:59:59.000Z

    This National Center for Photovoltaics sheet describes the capabilities of its silicon materials and devices research. The scope and core competencies and capabilities are discussed.

  18. Silicon-Graphene Anodes | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Silicon-Graphene Anodes Technology available for licensing: Provides low-cost production process. Advanced gas phase deposition process yields anodes with five times the specific...

  19. Engineering Metal Impurities in Multicrystalline Silicon Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar...

  20. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, Vimal K. (Northboro, MA); Tracey, Dennis M. (Medfield, MA); Foley, Michael R. (Oxford, MA); Paille, Norman I. (Oxford, MA); Pelletier, Paul J. (Sutton, MA); Sales, Lenny C. (Grafton, MA); Willkens, Craig A. (Worcester, MA); Yeckley, Russell L. (Latrobe, PA)

    1998-01-01T23:59:59.000Z

    A ceramic body comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa.