National Library of Energy BETA

Sample records for modules single-crystal silicon

  1. Solar cell structure incorporating a novel single crystal silicon material

    DOE Patents [OSTI]

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  2. Shock compression of [001] single crystal silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhao, S.; Remington, B.; Hahn, E. N.; Kad, B.; Bringa, E. M.; Meyers, M. A.

    2016-03-14

    Silicon is ubiquitous in our advanced technological society, yet our current understanding of change to its mechanical response at extreme pressures and strain-rates is far from complete. This is due to its brittleness, making recovery experiments difficult. High-power, short-duration, laser-driven, shock compression and recovery experiments on [001] silicon (using impedance-matched momentum traps) unveiled remarkable structural changes observed by transmission electron microscopy. As laser energy increases, corresponding to an increase in peak shock pressure, the following plastic responses are are observed: surface cleavage along {111} planes, dislocations and stacking faults; bands of amorphized material initially forming on crystallographic orientations consistent withmore » dislocation slip; and coarse regions of amorphized material. Molecular dynamics simulations approach equivalent length and time scales to laser experiments and reveal the evolution of shock-induced partial dislocations and their crucial role in the preliminary stages of amorphization. Furthermore, application of coupled hydrostatic and shear stresses produce amorphization below the hydrostatically determined critical melting pressure under dynamic shock compression.« less

  3. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    SciTech Connect (OSTI)

    Ravi, T. S.

    2013-05-01

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  4. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect (OSTI)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  5. Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

    SciTech Connect (OSTI)

    Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schröder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk; Lu, M.; Stein, A.; Ruggiero, C. A.; Salzman, J.; Kalish, R.

    2014-11-24

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 10{sup 6}) photonic crystal cavities with low mode volume (V{sub m} = 1.062 × (λ/n){sup 3}), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 10{sup 3}.

  6. Precision control of thermal transport in cryogenic single-crystal silicon devices

    SciTech Connect (OSTI)

    Rostem, K.; Chuss, D. T.; Colazo, F. A.; Crowe, E. J.; Denis, K. L.; Lourie, N. P.; Moseley, S. H.; Stevenson, T. R.; Wollack, E. J.

    2014-03-28

    We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1?K. It is shown that the phonon mean-free-path ? is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than ?, even when the surface is fairly smooth, 510?nm rms, and the peak thermal wavelength is 0.6??m. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30?nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order ?, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of 8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

  7. Rear surface spallation on single-crystal silicon in nanosecond laser micromachining

    SciTech Connect (OSTI)

    Ren, Jun; Orlov, Sergei S.; Hesselink, Lambertus

    2005-05-15

    Rear surface spallation of single-crystal silicon under 5-ns laser pulse ablation at intensities of 0.6-60 GW/cm{sup 2} is studied through postablation examination of the ablated samples. The spallation threshold energy and the spallation depth's dependences on the energy and target thickness are measured. From the linear relation between the spallation threshold energy and the target thickness, an estimation of the material spall strength around 1.4 GPa is obtained, in reasonable agreement with the spall strength estimation of 0.8-1.2 GPa at a strain rate of 10{sup 7} s{sup -1} using Grady's model for brittle materials. The experiment reveals the internal fracturing process over an extended zone in silicon, which is controlled by the competition between the shock pressure load and the laser ablation rate. The qualities of the laser microstructuring and micromachining results are greatly improved by using an acoustic impedance matching approach.

  8. Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells

    SciTech Connect (OSTI)

    Kopach, V. R.; Kirichenko, M. V. Khrypunov, G. S.; Zaitsev, R. V.

    2010-06-15

    It is shown that an increase in the efficiency and manufacturability of single-junction single-crystal silicon photoelectric converters of solar energy requires the use of a back-surface reflector based on conductive transparent indium-tin oxide (ITO) 0.25-2 {mu}m thick. To increase the efficiency and reduce the sensitivity to the angle of light incidence on the photoreceiving surface of multijunction photoelectric converters with vertical diode cells based on single-crystal silicon, ITO/Al reflectors with an ITO layer >1 {mu}m thick along vertical boundaries of diode cells should be fabricated. The experimental study of multijunction photoelectric converters with ITO/Al reflectors at diode cell boundaries shows the necessity of modernizing the used technology of ITO layers to achieve their theoretically calculated thickness.

  9. Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent

    DOE Patents [OSTI]

    Lundberg, Lynn B.

    1982-01-01

    A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330.degree. C. to about 1500.degree. C.

  10. Phosphorus and aluminum gettering - investigation of synergistic effects in single-crystal and multicrystalline silicon

    SciTech Connect (OSTI)

    Schubert, W.K.; Gee, J.M.

    1996-06-01

    Synergistic effects from simultaneous phosphorus-diffusion/aluminium alloy gettering are investigated in three different crystalline- silicon substrates. The silicon materials, experimental design, characterization, and analysis are presented. Some evidence for synergism is observed in the finished cells on all three substrates types. These results are combined with complementary observations of the effects of oxidation on bulk properties of previously gettered substrates to suggest a high volume, low cost, process implementation which could give up to 9% relative increase in efficiency.

  11. Single crystal neutron diffraction study of lattice and magnetic structures of 5M modulated Ni2Mn1.14Ga0.86

    SciTech Connect (OSTI)

    Pramanick, Abhijit; Wang, Xiaoping; An, Ke; Stoica, Alexandru Dan; Hoffmann, Christina; Wang, Xun-Li

    2012-01-01

    A comprehensive description of the crystal and magnetic structures of Ni-Mn-Ga magnetic shape memory alloys is important to understand the physical origins of their magnetoelastic properties. These structural details for an off-stoichiometric Ni2Mn1.14Ga0.86 alloy have been obtained from refinement of high-resolution single crystal neutron diffraction data following a (3+1)-dimensional superspace formalism. In particular, the structure adopts a P2/m( 0 )00 (3+1)-D superspace symmetry with the following fundamental lattice parameters: a=4.255(4) , b=5.613(4) , c=4.216(3) , a commensurate periodicity of 5M and a modulation wave vector of . The magnetic moments are aligned along the b-axis. The modulations for atomic site displacements, site occupancies and magnetic moments are elucidated from a (3+1)-D refinement of the neutron diffraction data. In addition to atomic displacements corresponding to shear waves along <110>, distortions of Ni-centric tetrahedra are also evident. Physical interpretations for the different structural distortions and their relationship with magnetic properties are discussed.

  12. Silicon photonic heater-modulator

    DOE Patents [OSTI]

    Zortman, William A.; Trotter, Douglas Chandler; Watts, Michael R.

    2015-07-14

    Photonic modulators, methods of forming photonic modulators and methods of modulating an input optical signal are provided. A photonic modulator includes a disk resonator having a central axis extending along a thickness direction of the disk resonator. The disk resonator includes a modulator portion and a heater portion. The modulator portion extends in an arc around the central axis. A PN junction of the modulator portion is substantially normal to the central axis.

  13. X-ray diffraction on the X-cut of a Ca{sub 3}TaGa{sub 3}Si{sub 2}O{sub 14} single crystal modulated by a surface acoustic wave

    SciTech Connect (OSTI)

    Irzhak, D. Roshchupkin, D.

    2014-06-28

    The result of X-ray diffraction study on a single crystal of the calcium-gallogermanate family Ca{sub 3}TaGa{sub 3}Si{sub 2}O{sub 14} (CTGS) modulated by a surface acoustic wave (SAW) is presented. The power flow angle for SAW propagating along the X{sub 2} axis of the X-cut in CTGS was measured. The rocking curves for the CTGS crystal were recorded at different amplitudes of an input high frequency electric signal on interdigital transducer used to excite a SAW. Based on the data obtained, intensity dependence of diffraction satellites on the amplitude of electric signal exciting a SAW was built. Numerical simulation of the crystal rocking curves and dependence of diffraction satellite intensities on the SAW amplitude enabled the selection of a set of material constants at which the most complete coincidence of experimental and calculated results is observed.

  14. Epitaxial Single Crystal Nanostructures for Batteries & PVs ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for Lithium Sulfur Batteries Better Ham & Cheese: Enhanced Anodes and Cathodes for Fuel Cells Epitaxial Single Crystal Nanostructures for Batteries & PVs High Performance ...

  15. Module and/or Cell Manufacturing

    U.S. Energy Information Administration (EIA) Indexed Site

    Reporting Companies, total number of: 59 Employment, full-time equivalent employees: 10,628 Module and/or Cell Manufacturing 26 Module or System Design 20 Prototype Module Development 15 Prototype Systems Development 8 Wholesale Distribution 30 Retail Distribution 12 Installations 9 Other 5 90-100% 43 50-89% 4 10-49% 6 Less than 10% 6 Crystalline Silicon: Single-Crystal Modules 12 Crystalline Silicon: Cast Modules 8 Thin-Film: Amorphous Silicon Modules 3 Thin-Film: Other Modules 2 Concentrators

  16. Ultratough single crystal boron-doped diamond

    DOE Patents [OSTI]

    Hemley, Russell J [Carnegie Inst. for Science, Washington, DC ; Mao, Ho-Kwang [Carnegie Inst. for Science, Washington, DC ; Yan, Chih-Shiue [Carnegie Inst. for Science, Washington, DC ; Liang, Qi [Carnegie Inst. for Science, Washington, DC

    2015-05-05

    The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

  17. Ames Lab 101: Single Crystal Growth

    ScienceCinema (OSTI)

    Schlagel, Deborah

    2014-06-04

    Ames Laboratory scientist Deborah Schlagel talks about the Lab's research in growing single crystals of various metals and alloys. The single crystal samples are vital to researchers' understanding of the characteristics of a materials and what gives these materials their particular properties.

  18. The reliability and stability of multijunction amorphous silicon PV modules

    SciTech Connect (OSTI)

    Carlson, D.E.

    1995-11-01

    Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies are about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.

  19. Synthesis of platinum single-crystal nanoparticles in water vapor...

    Office of Scientific and Technical Information (OSTI)

    of platinum single-crystal nanoparticles in water vapor Citation Details In-Document Search Title: Synthesis of platinum single-crystal nanoparticles in water vapor Authors: ...

  20. Test-to-Failure of Crystalline Silicon Modules: Preprint

    SciTech Connect (OSTI)

    Hacke, P.; Terwilliger, K.; Glick, S.; Trudell, D.; Bosco, N.; Johnston, S.; Kurtz, S. R.

    2010-10-01

    Accelerated lifetime testing of five crystalline silicon module designs was carried out according to the Terrestrial Photovoltaic Module Accelerated Test-to-Failure Protocol. This protocol compares the reliability of various module constructions on a quantitative basis. The modules under test are subdivided into three accelerated lifetime testing paths: 85..deg..C/85% relative humidity with system bias, thermal cycling between ?40..deg..C and 85..deg..C, and a path that alternates between damp heat and thermal cycling. The most severe stressor is damp heat with system bias applied to simulate the voltages that modules experience when connected in an array. Positive 600 V applied to the active layer with respect to the grounded module frame accelerates corrosion of the silver grid fingers and degrades the silicon nitride antireflective coating on the cells. Dark I-V curve fitting indicates increased series resistance and saturation current around the maximum power point; however, an improvement in junction recombination characteristics is obtained. Shunt paths and cell-metallization interface failures are seen developing in the silicon cells as determined by electroluminescence, thermal imaging, and I-V curves in the case of negative 600 V bias applied to the active layer. Ability to withstand electrolytic corrosion, moisture ingress, and ion drift under system voltage bias are differentiated.

  1. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Platinum Nanoclusters Out-Perform Single Crystals Print Wednesday, 27 October 2010 00:00 When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences

  2. World's largest single crystal of gold verified at Los Alamos

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    World's largest single crystal of gold verified at Los Alamos World's largest single crystal of gold verified at Los Alamos The SCD instrument is used to determine the periodic atomic arrangement or crystal structure of single crystals, both natural and synthetic. April 7, 2014 Neutron diffraction data collected on the single-crystal diffraction (SCD) instrument at the Lujan Center, from the Venezuelan gold sample, indicate that the sample is a single crystal. Neutron diffraction data collected

  3. Demonstration of single crystal growth via solid-solid transformation of a glass

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Savytskii, Dmytro; Knorr, Brian; Dierolf, Volkmar; Jain, Himanshu

    2016-03-18

    Many advanced technologies have relied on the availability of single crystals of appropriate material such as silicon for microelectronics or superalloys for turbine blades. Similarly, many promising materials could unleash their full potential if they were available in a single crystal form. However, the current methods are unsuitable for growing single crystals of these oftentimes incongruently melting, unstable or metastable materials. Here we demonstrate a strategy to overcome this hurdle by avoiding the gaseous or liquid phase, and directly converting glass into a single crystal. Specifically, Sb2S3 single crystals are grown in Sb-S-I glasses as an example of this approach.more » In this first unambiguous demonstration of an all-solid-state glass → crystal transformation, extraneous nucleation is avoided relative to crystal growth via spatially localized laser heating and inclusion of a suitable glass former in the composition. Lastly, the ability to fabricate patterned single-crystal architecture on a glass surface is demonstrated, providing a new class of micro-structured substrate for low cost epitaxial growth, active planar devices, etc.« less

  4. Neutron detection with single crystal organic scintillators

    SciTech Connect (OSTI)

    Zaitseva, N; Newby, J; Hamel, S; Carman, L; Faust, M; Lordi, V; Cherepy, N; Stoeffl, W; Payne, S

    2009-07-15

    Detection of high-energy neutrons in the presence of gamma radiation background utilizes pulse-shape discrimination (PSD) phenomena in organics studied previously only with limited number of materials, mostly liquid scintillators and single crystal stilbene. The current paper presents the results obtained with broader varieties of luminescent organic single crystals. The studies involve experimental tools of crystal growth and material characterization in combination with the advanced computer modeling, with the final goal of better understanding the relevance between the nature of the organic materials and their PSD properties. Special consideration is given to the factors that may diminish or even completely obscure the PSD properties in scintillating crystals. Among such factors are molecular and crystallographic structures that determine exchange coupling and exciton mobility in organic materials and the impurity effect discussed on the examples of trans-stilbene, bibenzyl, 9,10-diphenylanthracene and diphenylacetylene.

  5. Magnetoelasticity of Fe-Si single crystals

    SciTech Connect (OSTI)

    Xing, Q; Wu, D.; Lograsso, T. A.

    2010-04-20

    The tetragonal magnetostriction constant, (3/2){lambda}{sub 100}, of Fe-Si single crystals was measured and was found to be structure dependent. Similar to that of Fe-Ge single crystals, (3/2){lambda}{sub 100} is positive in the single phase A2 regime, becomes negative in the single phase D0{sub 3} regime, and changes from positive to negative between the two regimes. Short-range order in the A2 regime decreases the magnetostriction prior to the onset of long range order. In the single phase regions of both A2 and D0{sub 3}, thermal history does not show any obvious effect on the magnetostriction, contrary to that found for Fe-Ga alloys. However, in the regions of phase mixture involving A2, B2, and D0{sub 3} phases, quenching pushes the change in magnetostriction from positive to negative to higher Si contents.

  6. World's largest single crystal of gold verified at Los Alamos

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    World's largest single crystal of gold verified at Los Alamos World's largest single crystal of gold verified at Los Alamos The SCD instrument is used to determine the periodic ...

  7. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect (OSTI)

    Ghosh, M.; DelCueto, J.: Kampas, F.; Xi, J. )

    1993-02-01

    This report describes results from the first phase of a three-phase contract for the development of stable, high-efficiency, same-band-gap, amorphous silicon (a-Si) multijunction photovoltaic (PV) modules. The program involved improving the properties of individual layers of semiconductor and non-semiconductor materials and small-area single-junction and multijunction devices, as well as the multijunction modules. The semiconductor materials research was performed on a-Si p, i, and n layers, and on microcrystalline silicon n layers. These were deposited using plasma-enhanced chemical vapor deposition. The non-semiconductor materials studied were tin oxide, for use as a transparent-conducting-oxide (TCO), and zinc oxide, for use as a back reflector and as a buffer layer between the TCO and the semiconductor layers. Tin oxide was deposited using atmospheric-pressure chemical vapor deposition. Zinc oxide was deposited using magnetron sputtering. The research indicated that the major challenge in the fabrication of a-Si multijunction PV modules is the contact between the two p-i-n cells. A structure that has low optical absorption but that also facilitates the recombination of electrons from the first p-i-n structure with holes from the second p-i-n structure is required. Non-semiconductor layers and a-Si semiconductor layers were tested without achieving the desired result.

  8. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  9. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  10. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  11. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  12. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  13. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  14. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  15. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  16. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  17. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  18. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  19. Submicron diameter single crystal sapphire optical fiber

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hill, Cary; Homa, Daniel; Liu, Bo; Yu, Zhihao; Wang, Anbo; Pickrell, Gary

    2014-10-02

    In this work, a submicron-diameter single crystal sapphire optical fiber was demonstrated via wet acid etching at elevated temperatures. Etch rates on the order 2.3 µm/hr were achievable with a 3:1 molar ratio sulfuric-phosphoric acid solution maintained at a temperature of 343°C. A sapphire fiber with an approximate diameter of 800 nm was successfully fabricated from a commercially available fiber with an original diameter of 50 µm. The simple and controllable etching technique provides a feasible approach to the fabrication of unique waveguide structures via traditional silica masking techniques. The ability to tailor the geometry of sapphire optical fibers ismore » the first step in achieving optical and sensing performance on par with its fused silica counterpart.« less

  20. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect (OSTI)

    Guha, S. )

    1991-12-01

    This report describes research to improve the understanding of amorphous silicon alloys and other relevant non-semiconductor materials for use in high-efficiency, large-area multijunction modules. The research produced an average subcell initial efficiency of 8.8% over a 1-ft{sup 2} area using same-band-gap, dual-junction cells deposited over a ZnO/AlSi back reflector. An initial efficiency of 9.6% was achieved using a ZnO/Ag back reflector over smaller substrates. A sputtering machine will be built to deposit a ZnO/Ag back reflector over a 1-ft{sup 2} area so that a higher efficiency can also be obtained on larger substrates. Calculations have been performed to optimize the grid pattern, bus bars, and cell interconnects on modules. With our present state of technology, we expect a difference of about 6% between the aperture-area and active-area efficiencies of modules. Preliminary experiments show a difference of about 8%. We can now predict the performance of single-junction cells after long-term light exposure at 50{degree}C by exposing cells to short-term intense light at different temperatures. We find that single-junction cells deposited on a ZnO/Ag back reflector show the highest stabilized efficiency when the thickness of the intrinsic layers is about 2000 {angstrom}. 8 refs.

  1. Multifunctional Charge-Transfer Single Crystals through Supramolecular

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Assembly | Argonne National Laboratory Multifunctional Charge-Transfer Single Crystals through Supramolecular Assembly Title Multifunctional Charge-Transfer Single Crystals through Supramolecular Assembly Publication Type Journal Article Year of Publication 2016 Authors Xu, B, Luo, Z, Wilson, AJ, Chen, K, Gao, W, Yuan, G, Chopra, HD, Chen, X, Willets, KA, Dauter, Z, Ren, S Journal Advanced Materials Date Published 05042016 Abstract Centimeter-sized segregated stacking TTF-C60 single crystals

  2. Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity Single Cell Cavity This single cell cavity was made from a single crystal of niobium. Made in the same shape as the low-loss design proposed as an improvement to the baseline for the International Linear Collider (ILC), this cavity performs much better than the ILC design goal. Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity May 18, 2005 Jefferson Lab's Institute for Superconducting

  3. Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity Single Cell Cavity This single cell cavity was made from a single crystal of niobium. Made in the same shape as the low-loss design proposed as an improvement to the baseline for the International Linear Collider (ILC), this cavity performs much better than the ILC design goal. Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity Jefferson Lab's Institute for Superconducting Radiofrequency Science

  4. Single Crystal Preparation for High-Pressure Experiments in the...

    Office of Scientific and Technical Information (OSTI)

    Experiments in the Diamond Anvil Cell Citation Details In-Document Search Title: Single Crystal Preparation for High-Pressure Experiments in the Diamond Anvil Cell You are ...

  5. World's largest single crystal of gold verified by Los Alamos...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Los Alamos verifies largest single gold crystal World's largest single crystal of gold verified by Los Alamos instruments Using Lujan Center's HIPPO instrument, researchers probed ...

  6. Preparation and characterization of single crystal samples for...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Preparation and characterization of single crystal samples for high-pressure experiments Citation ... Here we report new procedures to produce extremely ...

  7. Ultratough CVD single crystal diamond and three dimensional growth thereof

    DOE Patents [OSTI]

    Hemley, Russell J.; Mao, Ho-kwang; Yan, Chih-shiue

    2009-09-29

    The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

  8. Highly efficient terahertz wave modulators by photo-excitation of organics/silicon bilayers

    SciTech Connect (OSTI)

    Yoo, Hyung Keun; Kang, Chul; Hwang, In-Wook; Yoon, Youngwoon; Lee, Kiejin; Kee, Chul-Sik; Lee, Joong Wook

    2014-07-07

    Using hybrid bilayer systems comprising a molecular organic semiconductor and silicon, we achieve optically controllable active terahertz (THz) modulators that exhibit extremely high modulation efficiencies. A modulation efficiency of 98% is achieved from thermally annealed C{sub 60}/silicon bilayers, due to the rapid photo-induced electron transfer from the excited states of the silicon onto the C{sub 60} layer. Furthermore, we demonstrate the broadband modulation of THz waves. The cut-off condition of the system that is determined by the formation of efficient charge separation by the photo-excitation is highly variable, changing the system from insulating to metallic. The phenomenon enables an extremely high modulation bandwidth and rates of electromagnetic waves of interest. The realization of near-perfect modulation efficiency in THz frequencies opens up the possibilities of utilizing active modulators for THz spectroscopy and communications.

  9. Single crystal Processing and magnetic properties of gadolinium nickel

    SciTech Connect (OSTI)

    Shreve, Andrew John

    2012-11-02

    GdNi is a rare earth intermetallic material that exhibits very interesting magnetic properties. Spontaneous magnetostriction occurs in GdNi at T{sub C}, on the order of 8000ppm strain along the c-axis and only until very recently the mechanism causing this giant magnetostriction was not understood. In order to learn more about the electronic and magnetic structure of GdNi, single crystals are required for anisotropic magnetic property measurements. Single crystal processing is quite challenging for GdNi though since the rare-earth transition-metal composition yields a very reactive intermetallic compound. Many crystal growth methods are pursued in this study including crucible free methods, precipitation growths, and specially developed Bridgman crucibles. A plasma-sprayed Gd{sub 2}O{sub 3} W-backed Bridgman crucible was found to be the best means of GdNi single crystal processing. With a source of high-quality single crystals, many magnetization measurements were collected to reveal the magnetic structure of GdNi. Heat capacity and the magnetocaloric effect are also measured on a single crystal sample. The result is a thorough report on high quality single crystal processing and the magnetic properties of GdNi.

  10. Cast polycrystalline silicon photovoltaic cell and module manufacturing technology improvements. Annual subcontract report, 1 December 1993--30 November 1994

    SciTech Connect (OSTI)

    Wohlgemuth, J.

    1995-09-01

    This report describes work performed under a 3-y contract to advance Solarex`s cast polycrystalline silicon manufacturing technology, reduce module production cost, increase module performance, and expand Solarex`s commercial production capacities. Specific objectives are to reduce manufacturing cost for polycrstalline silicon PV modules to less than $1.20/W and to increase manufacturing capacity by a factor of 3. Solarex is working on casting, wire saws, cell process, module assembly, frameless module development, and automated cell handling.

  11. OPTIMIZATION OF THE PARAMETERS IN THE RHIC SINGLE CRYSTAL HEAVY ION COLLIMATION.

    SciTech Connect (OSTI)

    BIRYUKOV,V.M.; CHESNOKOV,Y.A.; KOTOV,V.I.; TRBOJEVIC,D.; STEVENS,A.

    1999-03-29

    In the framework of the project to design and test a collimation system prototype using bent channeling crystal for cleaning of the RHIC heavy ion beam halo, we have studied the optimal length and bending angle of a silicon (110) single crystal proposed to be a primary element situated upstream of the traditional heavy amorphous collimator. Besides the matters of the channeling and collimation efficiency, we also looked into the impact the crystal may have on the non-channeled particles that go on circulating in the ring, so as to reduce the momentum offset of the particles scattered of the crystal.

  12. Elasticity of single-crystal olivine at high pressures and temperature...

    Office of Scientific and Technical Information (OSTI)

    Elasticity of single-crystal olivine at high pressures and temperatures Citation Details In-Document Search Title: Elasticity of single-crystal olivine at high pressures and ...

  13. A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; Wang, Fei Fred; Liang, Zhenxian; Costinett, Daniel; Blalock, Benjamin J.

    2014-04-30

    Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

  14. 14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Summary of Discussion Sessions

    SciTech Connect (OSTI)

    Sopori, B.; Tan, T.; Sinton, R.; Swanson, D.

    2004-10-01

    The 14th Workshop discussion sessions addressed funding needs for Si research and for R&D to enhance U.S. PV manufacturing. The wrap-up session specifically addressed topics for the new university silicon program. The theme of the workshop, Crystalline Silicon Solar Cells: Leapfrogging the Barriers, was selected to reflect the astounding progress in Si PV technology during last three decades, despite a host of barriers and bottlenecks. A combination of oral, poster, and discussion sessions addressed recent advances in crystal growth technology, new cell structures and doping methods, silicon feedstock issues, hydrogen passivation and fire through metallization, and module issues/reliability. The following oral/discussion sessions were conducted: (1) Technology Update; (2) Defects and Impurities in Si/Discussion; (3) Rump Session; (4) Module Issues and Reliability/Discussion; (5) Silicon Feedstock/Discussion; (6) Novel Doping, Cells, and Hetero-Structure Designs/Discussion; (7) Metallization/Silicon Nitride Processing/Discussion; (8) Hydrogen Passivation/Discussion; (9) Characterization/Discussion; and (10) Wrap-Up. This year's workshop lasted three and a half days and, for the first time, included a session on Si modules. A rump session was held on the evening of August 8, which addressed efficiency expectations and challenges of c Si solar cells/modules. Richard King of DOE and Daren Dance of Wright Williams& Kelly (formerly of Sematech) spoke at two of the luncheon sessions. Eleven students received Graduate Student Awards from funds contributed by the PV industry.

  15. Growing intermetallic single crystals using in situ decanting

    SciTech Connect (OSTI)

    Petrovic, Cedomir; Canfield, Paul; Mellen, Jonathan

    2012-05-16

    High temperature metallic solution growth is one of the most successful and versatile methods for single crystal growth, and is particularly suited for exploratory synthesis. The method commonly utilizes a centrifuge at room temperature and is very successful for the synthesis of single crystal phases that can be decanted from the liquid below the melting point of the silica ampoule. In this paper, we demonstrate the extension of this method that enables single crystal growth and flux decanting inside the furnace at temperatures above 1200C. This not only extends the number of available metallic solvents that can be used in exploratory crystal growth but also can be particularly well suited for crystals that have a rather narrow exposed solidification surface in the equilibrium alloy phase diagram.

  16. Fuel Performance Experiments on the Atomistic Level, Studying Fuel Through Engineered Single Crystal UO2

    SciTech Connect (OSTI)

    Burgett, Eric; Deo, Chaitanya; Phillpot, Simon

    2015-05-08

    Fuel Performance Experiments on the Atomistic Level, Studying Fuel Through Engineered Single Crystal UO2

  17. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  18. Synthesis, spectral characterization, and single crystal structure studies

    Office of Scientific and Technical Information (OSTI)

    of (2-nitro-ethene-1,1-diyl)-bis-((4-isopropyl-benzyl)sulfane) (Journal Article) | SciTech Connect Synthesis, spectral characterization, and single crystal structure studies of (2-nitro-ethene-1,1-diyl)-bis-((4-isopropyl-benzyl)sulfane) Citation Details In-Document Search Title: Synthesis, spectral characterization, and single crystal structure studies of (2-nitro-ethene-1,1-diyl)-bis-((4-isopropyl-benzyl)sulfane) The title compound (2-nitro-ethene-1,1-diyl)-bis-(4-isopropylbenzyl)sulfane)

  19. Method for harvesting single crystals from a peritectic melt

    DOE Patents [OSTI]

    Todt, Volker R.; Sengupta, Suvankar; Shi, Donglu

    1996-01-01

    A method of preparing single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals unmelted, allowing the wicking away of the peritectic liquid.

  20. Method for harvesting single crystals from a peritectic melt

    DOE Patents [OSTI]

    Todt, V.R.; Sengupta, S.; Shi, D.

    1996-08-27

    A method of preparing single crystals is disclosed. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals unmelted, allowing the wicking away of the peritectic liquid. 2 figs.

  1. Method for harvesting rare earth barium copper oxide single crystals

    DOE Patents [OSTI]

    Todt, Volker R.; Sengupta, Suvankar; Shi, Donglu

    1996-01-01

    A method of preparing high temperature superconductor single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals of the high temperature superconductor, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals of the high temperature superconductor on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals melted, allowing the wicking away of the peritectic liquid.

  2. SINGLE CRYSTAL NIOBIUM TUBES FOR PARTICLE COLLIDERS ACCELERATOR CAVITIES

    SciTech Connect (OSTI)

    MURPHY, JAMES E

    2013-02-28

    The objective of this research project is to produce single crystal niobium (Nb) tubes for use as particle accelerator cavities for the Fermi laboratorys International Linear Collider project. Single crystal Nb tubes may have superior performance compared to a polycrystalline tubes because the absence of grain boundaries may permit the use of higher accelerating voltages. In addition, Nb tubes that are subjected to the high temperature, high vacuum crystallization process are very pure and well annealed. Any impurity with a significantly higher vapor pressure than Nb should be decreased by the relatively long exposure at high temperature to the high vacuum environment. After application of the single crystal process, the surfaces of the Nb tubes are bright and shiny, and the tube resembles an electro polished Nb tube. For these reasons, there is interest in single crystal Nb tubes and in a process that will produce single crystal tubes. To convert a polycrystalline niobium tube into a single crystal, the tube is heated to within a few hundred ?C of the melting temperature of niobium, which is 2477 ?C. RF heating is used to rapidly heat the tube in a narrow zone and after reaching the operating temperature, the hot zone is slowly passed along the length of the tube. For crystallization tests with Nb tubes, the traverse rate was in the range of 1-10 cm per hour. All the crystallization tests in this study were performed in a water-cooled, stainless steel chamber under a vacuum of 5 x10-6 torr or better. In earliest tests of the single crystal growth process, the Nb tubes had an OD of 1.9 cm and a wall thickness of 0.15 mm. With these relatively small Nb tubes, the single crystal process was always successful in producing single crystal tubes. In these early tests, the operating temperature was normally maintained at 2200 ?C, and the traverse rate was 5 cm per hour. In the next test series, the Nb tube size was increased to 3.8 cm OD and the wall thickness was

  3. Growth of Sb-Bi gradient single crystals

    SciTech Connect (OSTI)

    Kozhemyakin, G. N. Lutskiy, D. V.; Rom, M. A.; Mateychenko, P. V.

    2008-12-15

    The growth conditions and structural quality of Sb-Bi gradient single crystals with Bi content from 2 to 18 at %, grown by the Czochralski method with solid phase feed, are investigated. Bi distribution in the crystals along their pulling direction are studied by electron probe microanalysis and the change in the interplanar spacing is analyzed by double-crystal X-ray diffraction. It is established that the pulling rate and feed mass affect the Bi distribution in Sb-Bi single crystals.

  4. Apparatus And Method For Producing Single Crystal Metallic Objects

    DOE Patents [OSTI]

    Huang, Shyh-Chin; Gigliotti, Jr., Michael Francis X.; Rutkowski, Stephen Francis; Petterson, Roger John; Svec, Paul Steven

    2006-03-14

    A mold is provided for enabling casting of single crystal metallic articles including a part-defining cavity, a sorter passage positioned vertically beneath and in fluid communication with the part-defining cavity, and a seed cavity positioned vertically beneath and in fluid communication with the sorter passage. The sorter passage includes a shape suitable for encouraging a single crystal structure in solidifying molten metal. Additionally, a portion of the mold between the sorter passage and the part-defining cavity includes a notch for facilitating breakage of a cast article proximate the notch during thermal stress build-up, so as to prevent mold breakage or the inclusion of part defects.

  5. Degradation Analysis of Weathered Crystalline-Silicon PV Modules: Preprint

    SciTech Connect (OSTI)

    Osterwald, C. R.; Anderberg, A.; Rummel, S.; Ottoson, L.

    2002-05-01

    We present an analysis of the results of a solar weathering program that found a linear relationship between maximum power degradation and the total UV exposure dose for four different types of commercial crystalline Si modules. The average degradation rate for the four modules types was 0.71% per year. The analysis showed that losses of short-circuit current were responsible for the maximum power degradation. Judging by the appearance of the undegraded control modules, it is very doubtful that the short-circuit current losses were caused by encapsulation browning or obscuration. When we compared the quantum efficiency of a single cell in a degraded module to one from an unexposed control module, it appears that most of the degradation has occurred in the 800 - 1100 nm wave-length region, and not the short wavelength region.

  6. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    SciTech Connect (OSTI)

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  7. Outdoor performance stability and controlled light-soak testing of amorphous silicon multijunction modules at NREL

    SciTech Connect (OSTI)

    Mrig, L.; Burdick, J.; Luft, W.; Kroposki, B.

    1994-12-31

    The National Renewable Energy Laboratory (NREL) has been testing amorphous silicon (a-Si) Photovoltaic (PV) modules for more than a decade. NREL has been conducting controlled light-soak testing of multijunction a-Si modules to characterize their performance for stability evaluation as well as to benchmark the technology status. Some of the test modules, after controlled light-soak testing, have been installed outdoors. The authors have observed that under outdoor exposure, the modules further degrade in performance, possibly due to lower outdoor temperatures and varying spectra. The paper presents data on the light-induced degradation for the third controlled light-soak test on multijunction a-Si modules as well as outdoor performance data on single- and multijunction modules under prevailing conditions.

  8. Outdoor performance stability and controlled light-soak testing of amorphous silicon multijunction modules at NREL

    SciTech Connect (OSTI)

    Mrig, L.; Burdick, J.; Luft, W.; Kroposki, B.

    1995-10-01

    The National Renewable Energy Laboratory (NREL) has been testing amorphous silicon (a-Si) Photovoltaic (PV) modules for more than a decade. NREL has been conducting controlled light-soak testing of multifunction a-Si modules to characterize their performance for stability evaluation as well as to benchmark the technology status. Some of the test modules, after controlled light-soak testing, have been installed outdoors. The authors have observed that under outdoor exposure, the modules further degrade in performance, possibly due to lower outdoor temperatures and varying spectra. The paper presents data on the light-induced degradation for the third controlled light-soak test on multijunction a-Si modules as well as outdoor performance data on single and multijunction modules under prevailing conditions.

  9. High efficiency multijunction amorphous silicon alloy-based solar cells and modules

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.; Banerjeee, A.; Glatfelter, T.; Hoffman, K.; Xu, X. )

    1994-06-30

    We have achieved initial efficiency of 11.4% as confirmed by National Renewable Energy Laboratory (NREL) on a multijunction amorphous silicon alloy photovoltaic module of one-square-foot-area. [bold This] [bold is] [bold the] [bold highest] [bold initial] [bold efficiency] [bold confirmed] [bold by] [bold NREL] [bold for] [bold any] [bold thin] [bold film] [bold photovoltaic] [bold module]. After light soaking for 1000 hours at 50 [degree]C under one-sun illumination, a module with initial efficiency of 11.1% shows a stabilized efficiency of 9.5%. Key factors that led to this high performance are discussed.

  10. Single-Crystal Structure of a Covalent Organic Framework

    SciTech Connect (OSTI)

    Zhang, YB; Su, J; Furukawa, H; Yun, YF; Gandara, F; Duong, A; Zou, XD; Yaghi, OM

    2013-11-06

    The crystal structure of a new covalent organic framework, termed COF-320, is determined by single-crystal 3D electron diffraction using the rotation electron diffraction (RED) method for data collection. The COF crystals are prepared by an imine condensation of tetra-(4-anilyl)methane and 4,4'-biphenyldialdehyde in 1,4-dioxane at 120 degrees C to produce a highly porous 9-fold interwoven diamond net. COF-320 exhibits permanent porosity with a Langmuir surface area of 2400 m(2)/g and a methane total uptake of 15.0 wt % (176 cm(3)/cm(3)) at 25 degrees C and 80 bar. The successful determination of the structure of COF-320 directly from single-crystal samples is an important advance in the development of COF chemistry.

  11. Method for harvesting rare earth barium copper oxide single crystals

    DOE Patents [OSTI]

    Todt, V.R.; Sengupta, S.; Shi, D.

    1996-04-02

    A method of preparing high temperature superconductor single crystals is disclosed. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals of the high temperature superconductor, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals of the high temperature superconductor on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals melted, allowing the wicking away of the peritectic liquid. 2 figs.

  12. Growth and characterization of lithium yttrium borate single crystals

    SciTech Connect (OSTI)

    Singh, A. K.; Singh, S. G.; Tyagi, M.; Desai, D. G.; Sen, Shashwati

    2014-04-24

    Single crystals of 0.1% Ce doped Li{sub 6}Y(BO{sub 3}){sub 3} have been grown using the Czochralski technique. The photoluminescence study of these crystals shows a broad emission at ? 420 nm corresponding to Ce{sub 3+} emission from 5d?4f energy levels. The decay profile of this emission shows a fast response of ? 28 ns which is highly desirable for detector applications.

  13. Experiences in Large Grain-Single Crystal Cavity Fabrication

    SciTech Connect (OSTI)

    Pekeler, Michael; Schwellenbach, Johannes; Tradt, Marco

    2007-08-09

    At ACCEL instruments several single cell and 9-cell cavities have been produced out of large grain niobium sheets from different suppliers. The fabrication experience and difference to the production out of fine grain niobium sheets will be described. In addition two cavities were produced using single crystal niobium sheets. The final cavities showed no grain boundaries at all in the cavity cell, even not in the electron beam welding seam.

  14. Growth of large single crystals of MgO

    SciTech Connect (OSTI)

    Boatner, L.A.; Urbanik, M.

    1997-06-12

    The progressive identification of new high-technology applications and requirements for MgO single crystals in the commercial realm, as well as in DOE and other government-agency project areas, has resulted in an increased demand and international market for this material. Specifically, the demand for MgO crystals in large sizes and quantities is presently increasing due to existing and developing applications that include: (a) MgO substrates for the formation of electro-optic thin films and devices, (b) epitaxial substrates for high-temperature thin-film superconducting devices MgO optical components - including high-temperature windows, lenses, and prisms, and (d) specialty MgO crucibles and evaporation sources for thin-film production. In the course of CRADA ORNL92-0091, carried out with Commercial Crystal Laboratories of Naples, Florida as the commercial participant, we have made major progress in increasing the size of single crystals of MgO produced by means of the submerged-arc-fusion technique-thereby increasing the commercial utility of this material. Prior to the accomplishments realized in the course of this CRADA, the only commercially available single crystals of MgO were produced in Japan, Israel, and Russia. The results achieved in the course of CRADA ORNL92-0091 have now led to the establishment of a domestic commercial source of MgO single-crystal substrates and components, and the U.S. is no longer totally dependent on foreign sources of this increasingly important material.

  15. Single crystal plasticity by modeling dislocation density rate behavior

    SciTech Connect (OSTI)

    Hansen, Benjamin L; Bronkhorst, Curt; Beyerlein, Irene; Cerreta, E. K.; Dennis-Koller, Darcie

    2010-12-23

    The goal of this work is to formulate a constitutive model for the deformation of metals over a wide range of strain rates. Damage and failure of materials frequently occurs at a variety of deformation rates within the same sample. The present state of the art in single crystal constitutive models relies on thermally-activated models which are believed to become less reliable for problems exceeding strain rates of 10{sup 4} s{sup -1}. This talk presents work in which we extend the applicability of the single crystal model to the strain rate region where dislocation drag is believed to dominate. The elastic model includes effects from volumetric change and pressure sensitive moduli. The plastic model transitions from the low-rate thermally-activated regime to the high-rate drag dominated regime. The direct use of dislocation density as a state parameter gives a measurable physical mechanism to strain hardening. Dislocation densities are separated according to type and given a systematic set of interactions rates adaptable by type. The form of the constitutive model is motivated by previously published dislocation dynamics work which articulated important behaviors unique to high-rate response in fcc systems. The proposed material model incorporates thermal coupling. The hardening model tracks the varying dislocation population with respect to each slip plane and computes the slip resistance based on those values. Comparisons can be made between the responses of single crystals and polycrystals at a variety of strain rates. The material model is fit to copper.

  16. Interfacial dislocation motion and interactions in single-crystal superalloys

    SciTech Connect (OSTI)

    Liu, B.; Raabe, D.; Roters, F.; Arsenlis, A.

    2014-10-01

    The early stage of high-temperature low-stress creep in single-crystal superalloys is characterized by the rapid development of interfacial dislocation networks. Although interfacial motion and dynamic recovery of these dislocation networks have long been expected to control the subsequent creep behavior, direct observation and hence in-depth understanding of such processes has not been achieved. Incorporating recent developments of discrete dislocation dynamics models, we simulate interfacial dislocation motion in the channel structures of single-crystal superalloys, and investigate how interfacial dislocation motion and dynamic recovery are affected by interfacial dislocation interactions and lattice misfit. Different types of dislocation interactions are considered: self, collinear, coplanar, Lomer junction, glissile junction, and Hirth junction. The simulation results show that strong dynamic recovery occurs due to the short-range reactions of collinear annihilation and Lomer junction formation. The misfit stress is found to induce and accelerate dynamic recovery of interfacial dislocation networks involving self-interaction and Hirth junction formation, but slow down the steady interfacial motion of coplanar and glissile junction forming dislocation networks. The insights gained from these simulations on high-temperature low-stress creep of single-crystal superalloys are also discussed.

  17. Ultrafast Dynamic Response of Single Crystal PETN and Beta-HMX...

    Office of Scientific and Technical Information (OSTI)

    Conference: Ultrafast Dynamic Response of Single Crystal PETN and Beta-HMX Citation Details In-Document Search Title: Ultrafast Dynamic Response of Single Crystal PETN and Beta-HMX...

  18. Single-Crystal Elasticity of the Deep-Mantle Magnesite at High...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Single-Crystal Elasticity of the Deep-Mantle Magnesite at High Pressure and Temperature Citation Details In-Document Search Title: Single-Crystal Elasticity of the ...

  19. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    SciTech Connect (OSTI)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  20. Electrical production testing of the D0 Silicon microstrip tracker detector modules

    SciTech Connect (OSTI)

    D0, SMT Production Testing Group; /Fermilab

    2006-03-01

    The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

  1. Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rao, Ashutosh; Patil, Aniket; Chiles, Jeff; Malinowski, Marcin; Novak, Spencer; Richardson, Kathleen; Rabiei, Payam; Fathpour, Sasan

    2015-08-20

    In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge23Sb7S70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 105 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scale dense on-chip integration ofmore » high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.« less

  2. Light-trapped, interconnected, Silicon-Film{trademark} modules. Final technical status report

    SciTech Connect (OSTI)

    Hall, R.B.; Rand, J.A.; Ford, D.H.; Ingram, A.E.

    1998-04-01

    AstroPower has continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected module. This report summarized work carried out over a 3-year, cost-shared contract. Key results accomplished during this phase include an NREL-verified conversion efficiency of 12.5% on a 0.47-cm{sup 2} device. The device structure used an insulating substrate and an active layer less than 100 {micro}m thick. A new metalization scheme was designed using insulating crossovers. This technology was demonstrated on a 36-segment, 321-cm{sup 2}, interconnected module. That module was tested at NREL with an efficiency of 9.79%. Further advances in metalization have led to an advanced single back-contact design that will offer low cost through ease of processing and higher performance through reduced shading.

  3. Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

    SciTech Connect (OSTI)

    Rao, Ashutosh; Patil, Aniket; Chiles, Jeff; Malinowski, Marcin; Novak, Spencer; Richardson, Kathleen; Rabiei, Payam; Fathpour, Sasan

    2015-08-20

    In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge23Sb7S70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 105 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scale dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.

  4. Field Experience with 3-Sun Mirror Module Systems

    SciTech Connect (OSTI)

    Fraas, Dr. Lewis; Avery, James E.; Huang, H,; Minkin, Leonid M; Fraas, J. X.; Maxey, L Curt; Gehl, Anthony C

    2008-01-01

    JX Crystals 3-sun PV mirror modules have now been operating in four separate systems in the field for up to 2 years. Two post-mounted 2-axis tracking arrays of 12 modules each were installed at the Shanghai Flower Park in April of 2006. Then 672 modules were installed in a 100 kW array on N-S horizontal beam trackers at the Shanghai Flower Port in November of 2006. Finally, sets of 4 modules were installed on azimuth-tracking carousels on buildings at the Oak Ridge National Lab and at the U. of Nevada in Las Vegas in late 2007. All of these modules in each of these systems are still operating at their initial power ratings. No degradation in performance has been observed. The benefit of these 3-sun PV mirror modules is that they use 1/3 of the silicon single-crystal cell material in comparison to traditional planar modules. Since aluminum mirrors are much cheaper than high-purity single-crystal silicon-cells, these modules and systems should be much lower in cost when manufactured in high volume.

  5. Shock response of He bubbles in single crystal Cu

    SciTech Connect (OSTI)

    Li, B.; Wang, L.; E, J. C.; Luo, S. N.; Ma, H. H.

    2014-12-07

    With large-scale molecular dynamics simulations, we investigate shock response of He nanobubbles in single crystal Cu. For sufficient bubble size or internal pressure, a prismatic dislocation loop may form around a bubble in unshocked Cu. The internal He pressure helps to stabilize the bubble against plastic deformation. However, the prismatic dislocation loops may partially heal but facilitate nucleation of new shear and prismatic dislocation loops. For strong shocks, the internal pressure also impedes internal jetting, while a bubble assists local melting; a high speed jet breaks a He bubble into pieces dispersed among Cu. Near-surface He bubbles may burst and form high velocity ejecta containing atoms and small fragments, while the ejecta velocities do not follow the three-dimensional Maxwell-Boltzmann distributions expected for thermal equilibrium. The biggest fragment size deceases with increasing shock strength. With a decrease in ligament thickness or an increase in He bubble size, the critical shock strength required for bubble bursting decreases, while the velocity range, space extension and average velocity component along the shock direction, increase. Small bubbles are more efficient in mass ejecting. Compared to voids and perfect single crystal Cu, He bubbles have pronounced effects on shock response including bubble/void collapse, Hugoniot elastic limit (HEL), deformation mechanisms, and surface jetting. HEL is the highest for perfect single crystal Cu with the same orientations, followed by He bubbles without pre-existing prismatic dislocation loops, and then voids. Complete void collapse and shear dislocations occur for embedded voids, as opposed to partial collapse, and shear and possibly prismatic dislocations for He bubbles. He bubbles lower the threshhold shock strength for ejecta formation, and increase ejecta velocity and ejected mass.

  6. Method for thermal processing alumina-enriched spinel single crystals

    DOE Patents [OSTI]

    Jantzen, Carol M.

    1995-01-01

    A process for age-hardening alumina-rich magnesium aluminum spinel to obtain the desired combination of characteristics of hardness, clarity, flexural strength and toughness comprises selection of the time-temperature pair for isothermal heating followed by quenching. The time-temperature pair is selected from the region wherein the precipitate groups have the characteristics sought. The single crystal spinel is isothermally heated and will, if heated long enough pass from its single phase through two pre-precipitates and two metastable precipitates to a stable secondary phase precipitate within the spinel matrix. Quenching is done slowly at first to avoid thermal shock, then rapidly.

  7. Method for thermal processing alumina-enriched spinel single crystals

    DOE Patents [OSTI]

    Jantzen, C.M.

    1995-05-09

    A process for age-hardening alumina-rich magnesium aluminum spinel to obtain the desired combination of characteristics of hardness, clarity, flexural strength and toughness comprises selection of the time-temperature pair for isothermal heating followed by quenching. The time-temperature pair is selected from the region wherein the precipitate groups have the characteristics sought. The single crystal spinel is isothermally heated and will, if heated long enough pass from its single phase through two pre-precipitates and two metastable precipitates to a stable secondary phase precipitate within the spinel matrix. Quenching is done slowly at first to avoid thermal shock, then rapidly. 12 figs.

  8. Acquisition of Single Crystal Growth and Characterization Equipment

    SciTech Connect (OSTI)

    Maple, M. Brian; Zocco, Diego A.

    2008-12-09

    Final Report for DOE Grant No. DE-FG02-04ER46178 'Acquisition of Single Crystal Growth and Characterization Equipment'. There is growing concern in the condensed matter community that the need for quality crystal growth and materials preparation laboratories is not being met in the United States. It has been suggested that there are too many researchers performing measurements on too few materials. As a result, many user facilities are not being used optimally. The number of proficient crystal growers is too small. In addition, insufficient attention is being paid to the enterprise of finding new and interesting materials, which is the driving force behind much of condensed matter research and, ultimately, technology. While a detailed assessment of this situation is clearly needed, enough evidence of a problem already exists to compel a general consensus that the situation must be addressed promptly. This final report describes the work carried out during the last four years in our group, in which a state-of-the-art single crystal growth and characterization facility was established for the study of novel oxides and intermetallic compounds of rare earth, actinide and transition metal elements. Research emphasis is on the physics of superconducting (SC), magnetic, heavy fermion (HF), non-Fermi liquid (NFL) and other types of strongly correlated electron phenomena in bulk single crystals. Properties of these materials are being studied as a function of concentration of chemical constituents, temperature, pressure, and magnetic field, which provide information about the electronic, lattice, and magnetic excitations at the root of various strongly correlated electron phenomena. Most importantly, the facility makes possible the investigation of material properties that can only be achieved in high quality bulk single crystals, including magnetic and transport phenomena, studies of the effects of disorder, properties in the clean limit, and spectroscopic and scattering

  9. Single crystal NMR studies of high temperature superconductors

    SciTech Connect (OSTI)

    Pennington, C.H.; Durand, D.J.; Zax, D.B.; Slichter, C.P.; Rice, J.P.; Bukowski, E.D.; Ginsberg, D.M.

    1989-01-01

    The authors report Cu NMR studies in the normal state of a single crystal of the T/sub c/ = 90 K superconductor YBa/sub 2/Cu/sub 3/O/sub 7/minus/delta/. The authors have measured the magnetic shift tensor, the electric field gradient tensor, the nuclear spin-lattice relaxation rate tensor, and the time dependence and functional form of the transverse decay. From these data they obtain information about the charge state and magnetic state of the Cu atoms, and the existence and size of the electronic exchange coupling between spins of adjacent Cu atoms. 18 refs., 3 figs., 2 tabs.

  10. Lithium niobate single-crystal and photo-functional device

    DOE Patents [OSTI]

    Gopalan, Venkatraman; Mitchell, Terrence E.; Kitamura, Kenji; Furukawa, Yasunori

    2001-01-01

    Provided are lithium niobate single-crystal that requires a low voltage of not larger than 10 kV/nm for its ferroelectric polarization inversion and of which the polarization can be periodically inverted with accuracy even at such a low voltage, and a photo-functional device comprising the crystal. The crystal has a molar fraction of Li.sub.2 O/(Nb.sub.2 O.sub.5 +Li.sub.2 O) of falling between 0.49 and 0.52. The photo-functional device can convert a laser ray being incident thereon.

  11. Modal reduction in single crystal sapphire optical fiber

    SciTech Connect (OSTI)

    Cheng, Yujie; Hill, Cary; Liu, Bo; Yu, Zhihao; Xuan, Haifeng; Homa, Daniel; Wang, Anbo; Pickrell, Gary

    2015-10-12

    A new type of single crystal sapphire optical fiber (SCSF) design is proposed to reduce the number of guided modes via a highly dispersive cladding with a periodic array of high and low index regions in the azimuthal direction. The structure retains a “core” region of pure single crystal (SC) sapphire in the center of the fiber and a “cladding” region of alternating layers of air and SC sapphire in the azimuthal direction that is uniform in the radial direction. The modal characteristics and confinement losses of the fundamental mode were analyzed via the finite element method by varying the effective core diameter and the dimensions of the “windmill” shaped cladding. The simulation results showed that the number of guided modes were significantly reduced in the “windmill” fiber design, as the radial dimension of the air and SC sapphire cladding regions increase with corresponding decrease in the azimuthal dimension. It is anticipated that the “windmill” SCSF will readily improve the performance of current fiber optic sensors in the harsh environment and potentially enable those that were limited by the extremely large modal volume of unclad SCSF.

  12. Modal reduction in single crystal sapphire optical fiber

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cheng, Yujie; Hill, Cary; Liu, Bo; Yu, Zhihao; Xuan, Haifeng; Homa, Daniel; Wang, Anbo; Pickrell, Gary

    2015-10-12

    A new type of single crystal sapphire optical fiber (SCSF) design is proposed to reduce the number of guided modes via a highly dispersive cladding with a periodic array of high and low index regions in the azimuthal direction. The structure retains a “core” region of pure single crystal (SC) sapphire in the center of the fiber and a “cladding” region of alternating layers of air and SC sapphire in the azimuthal direction that is uniform in the radial direction. The modal characteristics and confinement losses of the fundamental mode were analyzed via the finite element method by varying themore » effective core diameter and the dimensions of the “windmill” shaped cladding. The simulation results showed that the number of guided modes were significantly reduced in the “windmill” fiber design, as the radial dimension of the air and SC sapphire cladding regions increase with corresponding decrease in the azimuthal dimension. It is anticipated that the “windmill” SCSF will readily improve the performance of current fiber optic sensors in the harsh environment and potentially enable those that were limited by the extremely large modal volume of unclad SCSF.« less

  13. Synthesis of millimeter-scale transition metal dichalcogenides single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gong, Yongji; Ye, Gonglan; Lei, Sidong; Shi, Gang; Vajtai, Robert; Pantelides, Sokrates T.; Zhou, Wu; Li, Bo; Ajayan, Pullikel M.

    2016-02-10

    The emergence of semiconducting transition metal dichalcogenide (TMD) atomic layers has opened up unprecedented opportunities in atomically thin electronics. Yet the scalable growth of TMD layers with large grain sizes and uniformity has remained very challenging. Here is reported a simple, scalable chemical vapor deposition approach for the growth of MoSe2 layers is reported, in which the nucleation density can be reduced from 105 to 25 nuclei cm-2, leading to millimeter-scale MoSe2 single crystals as well as continuous macrocrystalline films with millimeter size grains. The selective growth of monolayers and multilayered MoSe2 films with well-defined stacking orientation can also bemore » controlled via tuning the growth temperature. In addition, periodic defects, such as nanoscale triangular holes, can be engineered into these layers by controlling the growth conditions. The low density of grain boundaries in the films results in high average mobilities, around ≈42 cm2 V-1 s-1, for back-gated MoSe2 transistors. This generic synthesis approach is also demonstrated for other TMD layers such as millimeter-scale WSe2 single crystals.« less

  14. Shock compression experiments on Lithium Deuteride single crystals.

    SciTech Connect (OSTI)

    Knudson, Marcus D.; Desjarlais, Michael P.; Lemke, Raymond W.

    2014-10-01

    S hock compression exper iments in the few hundred GPa (multi - Mabr) regime were performed on Lithium Deuteride (LiD) single crystals . This study utilized the high velocity flyer plate capability of the Sandia Z Machine to perform impact experiments at flyer plate velocities in the range of 17 - 32 km/s. Measurements included pressure, density, and temperature between ~200 - 600 GPa along the Principal Hugoniot - the locus of end states achievable through compression by large amplitude shock waves - as well as pressure and density of re - shock states up to ~900 GPa . The experimental measurements are compared with recent density functional theory calculations as well as a new tabular equation of state developed at Los Alamos National Labs.

  15. Single crystal metal wedges for surface acoustic wave propagation

    DOE Patents [OSTI]

    Fisher, E.S.

    1980-05-09

    An ultrasonic testing device has been developed to evaluate flaws and inhomogeneities in the near-surface region of a test material. A metal single crystal wedge is used to generate high frequency Rayleigh surface waves in the test material surface by conversion of a slow velocity, bulk acoustic mode in the wedge into a Rayleigh wave at the metal-wedge test material interface. Particular classes of metals have been found to provide the bulk acoustic modes necessary for production of a surface wave with extremely high frequency and angular collimation. The high frequency allows flaws and inhomogeneities to be examined with greater resolution. The high degree of angular collimation for the outgoing ultrasonic beam permits precision angular location of flaws and inhomogeneities in the test material surface.

  16. Single crystal metal wedges for surface acoustic wave propagation

    DOE Patents [OSTI]

    Fisher, Edward S.

    1982-01-01

    An ultrasonic testing device has been developed to evaluate flaws and inhomogeneities in the near-surface region of a test material. A metal single crystal wedge is used to generate high frequency Rayleigh surface waves in the test material surface by conversion of a slow velocity, bulk acoustic mode in the wedge into a Rayleigh wave at the metal-wedge test material interface. Particular classes of metals have been found to provide the bulk acoustic modes necessary for production of a surface wave with extremely high frequency and angular collimation. The high frequency allows flaws and inhomogeneities to be examined with greater resolution. The high degree of angular collimation for the outgoing ultrasonic beam permits precision angular location of flaws and inhomogeneities in the test material surface.

  17. Measurement of thermal conductivity in proton irradiated silicon

    SciTech Connect (OSTI)

    Marat Khafizov; Clarissa Yablinsky; Todd Allen; David Hurley

    2014-04-01

    We investigate the influence of proton irradiation on thermal conductivity in single crystal silicon. We apply laser based modulated thermoreflectance technique to extract the change in conductivity of the thin layer damaged by proton irradiation. Unlike time domain thermoreflectance techniques that require application of a metal film, we perform our measurement on uncoated samples. This provides greater sensitivity to the change in conductivity of the thin damaged layer. Using sample temperature as a parameter provides a means to deduce the primary defect structures that limit thermal transport. We find that under high temperature irradiation the degradation of thermal conductivity is caused primarily by extended defects.

  18. Growth and characterization of diammonium copper disulphate hexahydrate single crystal

    SciTech Connect (OSTI)

    Siva Sankari, R.; Perumal, Rajesh Narayana

    2014-03-01

    Graphical abstract: Diammonium copper disulphate hexahydrate (DACS) is one of the most promising inorganic dielectric crystals with exceptional mechanical properties. Good quality crystals of DACS were grown by using solution method in a period of 30 days. The grown crystals were subjected to single crystal X-ray diffraction analysis in order to establish their crystalline nature. Thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis were performed for the crystal. Several solid state physical parameters have been determined for the grown crystals. The dielectric constant and the dielectric loss and AC conductivity of the grown crystal were studied as a function of frequency and temperature has been calculated and plotted. - Highlights: • Diammonium copper disulphate is grown for the first time and CCDC number obtained. • Thermal analysis is done to see the stability range of the crystals. • Band gap and UV cut off wavelength of the crystal are determined to be 2.4 eV and 472.86 nm, respectively. • Dielectric constant, dielectric loss and AC conductivity are plotted as a function of applied field. - Abstract: Diammonium copper disulphate hexahydrate is one of the most promising inorganic crystals with exceptional dielectric properties. A good quality crystal was harvested in a 30-day period using solution growth method. The grown crystal was subjected to various characterization techniques like single crystal X-ray diffraction analysis, thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis. Unit cell dimensions of the grown crystal have been identified from XRD studies. Functional groups of the title compounds have been identified from FTIR studies. Thermal stability of the samples was checked by TG/DTA studies. Band gap of the crystal was calculated. The dielectric constant and dielectric loss were studied as a function of frequency of the applied field. AC conductivity was plotted as a function

  19. Advances in amorphous silicon alloy-based multijunction cells and modules

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.; Banerjee, A.; Glatfelter, T.; Xu, X. )

    1992-12-01

    Multijunction amorphous silicon alloy-based solar cells and modules offer the potential of obtaining high efficiency with long-term stability against light-induced degradation. We have studied the stability of the component cells of the multijunction devices prepared under different deposition conditions. We observe a definite correlation between the microstructure of the intrinsic material and initial and light-degraded performance of the cells. Using suitable deposition conditions and optimum matching of the component cells, we have fabricated double-junction dual-bandgap cells which show stabilized active-area efficiency of 11% after 600 hours of one-sun illumination at 50 [degree]C. Double-junction and triple-junction modules of 900 cm[sup 2] area have been fabricated, and the performance of these panels will be discussed.

  20. World's largest single crystal of gold verified by Los Alamos instruments

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Los Alamos verifies largest single gold crystal World's largest single crystal of gold verified by Los Alamos instruments Using Lujan Center's HIPPO instrument, researchers probed the specimen with neutrons to gather critical information December 22, 2014 World's largest single crystal of gold verified by Los Alamos instruments Neutron diffraction data collected on the single-crystal diffraction (SCD) instrument at the Lujan Center, from the Venezuelan gold sample, indicate that the sample is a

  1. Single-crystal X-ray diffraction at extreme conditions: a review...

    Office of Scientific and Technical Information (OSTI)

    Title: Single-crystal X-ray diffraction at extreme conditions: a review Authors: Ballaran, Tiziana Boffa ; Kurnosov, Alexander ; Trots, Dmytro 1 + Show Author Affiliations ...

  2. DEVELOPMENT OF PROTECTIVE COATINGS FOR SINGLE CRYSTAL TURBINE BLADES

    SciTech Connect (OSTI)

    Amarendra K. Rai

    2006-12-04

    Turbine blades in coal derived syngas systems are subject to oxidation and corrosion due to high steam temperature and pressure. Thermal barrier coatings (TBCs) are developed to address these problems. The emphasis is on prime-reliant design and a better coating architecture, having high temperature and corrosion resistance properties for turbine blades. In Phase I, UES Inc. proposed to develop, characterize and optimize a prime reliant TBC system, having smooth and defect-free NiCoCrAlY bond layer and a defect free oxide sublayer, using a filtered arc technology. Phase I work demonstrated the deposition of highly dense, smooth and defect free NiCoCrAlY bond coat on a single crystal CMSX-4 substrate and the deposition of alpha-alumina and yttrium aluminum garnet (YAG) sublayer on top of the bond coat. Isothermal and cyclic oxidation test and pre- and post-characterization of these layers, in Phase I work, (with and without top TBC layer of commercial EB PVD YSZ) revealed significant performance enhancement.

  3. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; Parashchuk, T. O.; Freik, D. M.; Panchuk, O. E.; James, R. B.; Gorichok, I. V.

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and themore » parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.« less

  4. Mechanism of relaxation polarization in lithium fluoride single crystals

    SciTech Connect (OSTI)

    Annenkov, Yu.M.; Boev, S.G.; Kozhemyakin, V.A.; Fursa, T.V.

    1988-12-01

    The authors have compared the thermally stimulated currents and the pulsed electromagnetic radiation of thermoelectrets and mechanoelectrets made from lithium fluoride single crystals grown without specially introduced impurities. The samples with platinum electrodes applied to the surface by cathodic sputtering were deformed along the largest face up to relative strain /var epsilon/ equal to 1.4%. Then the thermally stimulated currents were registered upon heating the samples at the rate of 3-4 deg/min. In other experiments, after deformation of the samples under analogous conditions they registered the pulsed electromagnetic signals for the samples upon nonisothermal annealing. Plane-parallel samples were polarized at the temperature 473 K and electric field intensity 5 kV/cm for 10-15 min. Since thermally stimulated currents and pulsed electromagnetic signals at 363-383 K decreased substantially over the course of several hours after polarization or deformation of the samples and were practically unregistered after one day, while the volume charge in LiF can be retained over the course of many months, they may conclude that the first relaxation maximum is not connected with disruption of the volume charge. It is possible due to localization of cationic vacancies on individual dislocations, while the second maximum may be due to such dislocation pile-ups.

  5. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    SciTech Connect (OSTI)

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; Parashchuk, T. O.; Freik, D. M.; Panchuk, O. E.; James, R. B.; Gorichok, I. V.

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

  6. Radiation tolerance of piezoelectric bulk single-crystal aluminum nitride

    SciTech Connect (OSTI)

    David A. Parks; Bernhard R. Tittmann

    2014-07-01

    For practical use in harsh radiation environments, we pose selection criteria for piezoelectric materials for nondestructive evaluation (NDE) and material characterization. Using these criteria, piezoelectric aluminum nitride is shown to be an excellent candidate. The results of tests on an aluminumnitride-based transducer operating in a nuclear reactor are also presented. We demonstrate the tolerance of single-crystal piezoelectric aluminum nitride after fast and thermal neutron fluences of 1.85 × 1018 neutron/cm2 and 5.8 × 1018 neutron/cm2, respectively, and a gamma dose of 26.8 MGy. The radiation hardness of AlN is most evident from the unaltered piezoelectric coefficient d33, which measured 5.5 pC/N after a fast and thermal neutron exposure in a nuclear reactor core for over 120 MWh, in agreement with the published literature value. The results offer potential for improving reactor safety and furthering the understanding of radiation effects on materials by enabling structural health monitoring and NDE in spite of the high levels of radiation and high temperatures, which are known to destroy typical commercial ultrasonic transducers.

  7. Properties of salt-grown uranium single crystals.

    SciTech Connect (OSTI)

    Cooley, J. C.; Hanrahan, R. J.; Hults, W. L.; Lashley, J. C.; Manley, M. E.; Mielke, C. H.; Smith, J. L.; Thoma, D. J.; Clark, R. G.; Hamilton, A. R.; O'Brien, J. L.; Gay, E. C.; Lumpkin, N. E.; McPheeters, C. C.; Willit, J.; Schmiedeshoff, G. M.; Touton, S.; Woodfield, B. F.; Lang, B. E.; Boerio-Goates, Juliana

    2001-01-01

    Recently single crystals of {alpha}-uranium were grown from a liquid salt bath. The electrical, magnetic and thermal properties of these crystals have been surveyed. The ratio of the room temperature resistivity of these crystals to the saturation value at low temperature is three times larger than any previously reported demonstrating that the crystals are of higher purity and quality than those in past work. The resistive signatures of the CDW transitions at 43, 37 and 22 K are obvious to the naked eye. The transition at 22 K exhibits temperature hysteresis that increases with magnetic field. In addition the superconducting transition temperature from resistivity is 820 mK and the critical field is 80 mT. Contrary to earlier work where the Debye temperature ranged from 186 to 218 K, the Debye temperature extracted from the heat capacity is 254 K in good agreement with the predicted value of 250 K. Magnetoresistance, Hall effect and magnetic susceptibility measurements are underway. In time, measurements made on these crystals may help us to understand the origin of superconductivity and its relation to the CDW transitions in pure uranium.

  8. Light-trapped interconnected, Silicon-Film{trademark} modules. Annual technical status report, 18 November 1995--18 November 1996

    SciTech Connect (OSTI)

    Hall, R.B.; Rand, J.A.; Cotter, J.E.; Ford, D.H.

    1997-02-01

    AstroPower is developing a module-manufacturing technology based on a film-silicon technology. AstroPower, as a Technology Partner in the Thin-Film PV Partnership, is employing its Silicon-Film{trademark} technology to develop an advanced thin-silicon-based product. This module will combine the design and process features of the most advanced thin-silicon solar cells with light-trapping. These cells will be integrated into a low-cost interconnected array. During the second year of the 3-year project, AstroPower`s emphasis was on developing key submodule fabrication processes. Key results of the work include developing a new thin-film growth concept process based on attaching the low-cost substrate to the thin silicon layer after film growth; developing a new technique to achieve light-trapping in thin layers of silicon based on pigmented high-temperature glass materials; and developing key submodule fabrication processes, including contact grid design, subelement isolation, and screen-printed interconnection.

  9. Method of forming buried oxide layers in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  10. Arc-melting preparation of single crystal LaB.sub.6 cathodes

    DOE Patents [OSTI]

    Gibson, Edwin D.; Verhoeven, John D.

    1977-06-21

    A method for preparing single crystals of lanthanum hexaboride (LaB.sub.6) by arc melting a rod of compacted LaB.sub.6 powder. The method is especially suitable for preparing single crystal LaB.sub.6 cathodes for use in scanning electron microscopes (SEM) and scanning transmission electron microscopes (STEM).

  11. Apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel

    1986-05-20

    Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  12. In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing: Preprint

    SciTech Connect (OSTI)

    Spataru, Sergiu; Hacke, Pater; Sera, Dezso

    2015-09-15

    We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. From the analysis we determine three main categories of failure modes associated with the module degradation consisting of: shunting, recombination losses, increased series resistance losses, and current mismatch losses associated with a decrease in photo-current generation by removal of some cell areas due to cell fractures. Based on the analysis, we propose an in-situ module power loss monitoring procedure that relies on dark current-voltage measurements taken during the stress test, and initial and final module flash testing, to determine the power degradation characteristic of the module.

  13. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    SciTech Connect (OSTI)

    Pickrell, Gary; Scott, Brian; Wang, Anbo; Yu, Zhihao

    2013-12-31

    This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier

  14. Growth and properties of Lithium Salicylate single crystals

    SciTech Connect (OSTI)

    Zaitseva, N; Newby, J; Hull, G; Saw, C; Carman, L; Cherepy, N; Payne, S

    2009-02-13

    An attractive feature of {sup 6}Li containing fluorescence materials that determines their potential application in radiation detection is the capture reaction with slow ({approx}< 100 keV) neutrons: {sup 6}Li + n = {sup 4}He + {sup 3}H + 4.8MeV. The use of {sup 6}Li-salicylate (LiSal, LiC{sub 6}H{sub 5}O{sub 3}) for thermal neutron detection was previously studied in liquid and polycrystalline scintillators. The studies showed that both liquid and polycrystalline LiSal scintillators could be utilized in pulse shape discrimination (PSD) techniques that enable separation of neutrons from the background gamma radiation. However, it was found that the efficiency of neutron detection using LiSal in liquid solutions was severely limited by its low solubility in commonly used organic solvents like, for example, toluene or xylene. Better results were obtained with neutron detectors containing the compound in its crystalline form, such as pressed pellets, or microscopic-scale (7-14 micron) crystals dispersed in various media. The expectation drown from these studies was that further improvement of pulse height, PSD, and efficiency characteristics could be reached with larger and more transparent LiSal crystals, growth of which has not been reported so far. In this paper, we present the first results on growth and characterization of relatively large, a cm-scale size, single crystals of LiSal with good optical quality. The crystals were grown both from aqueous and anhydrous (methanol) media, mainly for neutron detection studies. However, the results on growth and structural characterization may be interesting for other fields where LiSal, together with other alkali metal salicylates, is used for biological, medical, and chemical (as catalyst) applications.

  15. Spin-orbit tuned metal-insulator transitions in single-crystal...

    Office of Scientific and Technical Information (OSTI)

    Title: Spin-orbit tuned metal-insulator transitions in single-crystal SrIr1-xRhxO (0x1) SrIrO is a magnetic insulator driven by spin-orbit interaction (SOI) ...

  16. Welding and Weldability of Directionally Solidified Single Crystal Nickel-Base Superalloys

    SciTech Connect (OSTI)

    Vitek, J M; David, S A; Reed, R W; Burke, M A; Fitzgerald, T J

    1997-09-01

    Nickel-base superalloys are used extensively in high-temperature service applications, and in particular, in components of turbine engines. To improve high-temperature creep properties, these alloys are often used in the directionally-solidified or single-crystal form. The objective of this CRADA project was to investigate the weldability of both experimental and commercial nickel-base superalloys in polycrystalline, directionally-solidified, and single-crystal forms.

  17. The growth of Ho:YAG single crystals by Czochralski method and investigating the formed cores

    SciTech Connect (OSTI)

    Hasani Barbaran, J. Ghani Aragi, M. R.; Javaheri, I.; Baharvand, B.; Tabasi, M.; Layegh Ahan, R.; Jangjo, E.

    2015-12-15

    Ho:YAG single crystals were grown by Czochralski technique, and investigated by the X-ray diffraction (XRD) and optical methods. The crystals were cut and polished in order to observe and analyze their cores. It was found that the deviation of the cores formed in the Czochralski grown Ho:YAG single crystals are resulted from non-symmetrical status of thermal insulation around the Iridium crucible.

  18. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    SciTech Connect (OSTI)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2005-11-01

    This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

  19. Effect of indium and antimony doping in SnS single crystals

    SciTech Connect (OSTI)

    Chaki, Sunil H. Chaudhary, Mahesh D.; Deshpande, M.P.

    2015-03-15

    Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

  20. Research on stable, high-efficiency amorphous silicon multijunction modules. Final subcontract report, 1 January 1991--31 August 1994

    SciTech Connect (OSTI)

    Guha, S.

    1994-10-01

    The principal objective of this program is to conduct research on semiconductor materials and non-semiconductor materials to enhance the performance of multibandgap, multijunction, large-area amorphous silicon-based alloy modules. The goal for this program is to demonstrate stabilized module efficiency of 12% for multijunction modules of area greater than 900 cm{sup 2}. Double-junction and triple-junction cells are made on Ag/ZnO back reflector deposited on stainless steel substrates. The top cell uses a-Si alloy; a-SiGe alloy is used for the i layer in the middle and the bottom cells. After evaporation of antireflection coating, silver grids and bus bars are put on the top surface, and the panel is encapsulated in an ethylene vinyl acetate (EVA)/Tefzel structure to make a one-square-foot monolithic module.

  1. Testing and Analysis for Lifetime Prediction of Crystalline Silicon PV Modules Undergoing Degradation by System Voltage Stress: Preprint

    SciTech Connect (OSTI)

    Hacke, P.; Smith, R.; Terwiliger, K.; Glick, S.; Jordan, D.; Johnston, S.; Kempe, M.; Kurtz, S.

    2012-07-01

    Acceleration factors are calculated for crystalline silicon PV modules under system voltage stress by comparing the module power during degradation outdoors to that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined, and the probability of module failure at an arbitrary temperature is predicted. To obtain statistical data for multiple modules over the course of degradation in-situ of the test chamber, dark I-V measurements are obtained and transformed using superposition, which is found well suited for rapid and quantitative evaluation of potential-induced degradation. It is determined that shunt resistance measurements alone do not represent the extent of power degradation. This is explained with a two-diode model analysis that shows an increasing second diode recombination current and ideality factor as the degradation in module power progresses. Failure modes of the modules stressed outdoors are examined and compared to those stressed in accelerated tests.

  2. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    University of Illinois

    2009-04-21

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  3. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne

    2012-06-12

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  4. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    Rogers, John A.; Khang, Dahl -Young; Sun, Yugang; Menard, Etienne

    2015-08-11

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  5. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne

    2014-06-17

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  6. Research on stable, high-efficiency amorphous silicon multijunction modules. Semiannual subcontract report, 1 March 1993--30 November 1993

    SciTech Connect (OSTI)

    Guha, S.

    1994-03-01

    This report describes the progress made during the first half of Phase III of the R&D program to obtain high-efficiency amorphous silicon alloy multijunction modules. The highlight of the work includes (1) demonstration of the world`s highest initial module efficiency (area of 0.09 m{sup 2}) of 11.4% as confirmed by NREL, and (2) demonstration of stable module efficiency of 9.5% after 1-sun light soaking for 1000 h at 50{degrees}C. In addition, fundamental studies were carried out to improve material properties of the component cells of the multijunction structure and to understand the optical losses associated with the back reflector.

  7. Surface Binding and Organization of Sensitizing Dyes on Metal Oxide Single Crystal Surfaces

    SciTech Connect (OSTI)

    Parkinson, Bruce

    2010-06-04

    Even though investigations of dye-sensitized nanocrystalline semiconductors in solar cells has dominated research on dye-sensitized semiconductors over the past two decades. Single crystal electrodes represent far simpler model systems for studying the sensitization process with a continuing train of studies dating back more than forty years. Even today single crystal surfaces prove to be more controlled experimental models for the study of dye-sensitized semiconductors than the nanocrystalline substrates. We analyzed the scientific advances in the model sensitized single crystal systems that preceded the introduction of nanocrystalline semiconductor electrodes. It then follows the single crystal research to the present, illustrating both their striking simplicity of use and clarity of interpretation relative to nanocrystalline electrodes. Researchers have employed many electrochemical, photochemical and scanning probe techniques for studying monolayer quantities of sensitizing dyes at specific crystallographic faces of different semiconductors. These methods include photochronocoulometry, electronic spectroscopy and flash photolysis of dyes at potential-controlled semiconductor electrodes and the use of total internal reflection methods. In addition, we describe the preparation of surfaces of single crystal SnS2 and TiO2 electrodes to serve as reproducible model systems for charge separation at dye sensitized solar cells. This process involves cleaving the SnS2 electrodes and a photoelectrochemical surface treatment for TiO2 that produces clean surfaces for sensitization (as verified by AFM) resulting in near unity yields for electron transfer from the molecular excited dyes into the conduction band.

  8. Process and apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel

    1988-06-28

    Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  9. High-silicon {sup 238}PuO{sub 2} fuel characterization study: Half module impact tests

    SciTech Connect (OSTI)

    Reimus, M.A.H.

    1997-01-01

    The General-Purpose Heat Source (GPHS) provides power for space missions by transmitting the heat of [sup 238]Pu decay to an array of thermoelectric elements. The modular GPHS design was developed to address both survivability during launch abort and return from orbit. Previous testing conducted in support of the Galileo and Ulysses missions documented the response of GPHSs to a variety of fragment- impact, aging, atmospheric reentry, and Earth-impact conditions. The evaluations documented in this report are part of an ongoing program to determine the effect of fuel impurities on the response of the heat source to conditions baselined during the Galileo/Ulysses test program. In the first two tests in this series, encapsulated GPHS fuel pellets containing high levels of silicon were aged, loaded into GPHS module halves, and impacted against steel plates. The results show no significant differences between the response of these capsules and the behavior of relatively low-silicon fuel pellets tested previously.

  10. High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003

    SciTech Connect (OSTI)

    Rand, J. A.; Culik, J. S.

    2005-10-01

    The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

  11. Electrodynamic Properties of Single-Crystal and Thin-Film Strontium Titanate

    SciTech Connect (OSTI)

    Findikoglu, A.T.; Jia, Q.; Reagor, D.W.; Kwon, C.; Rasmussen, K.O.

    1999-05-13

    The authors present a comparative study of broadband electrodynamic properties of coplanar waveguides made from nonlinear dielectric single-crystal and thin-film SrTiO{sub 3} (STO) with high-temperature superconducting thin-film YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} electrodes. The waveguides that use single-crystal STO exhibit a monotonic increase in refractive index, dielectric nonlinearity, and dissipation with decreasing temperature (from 80 K to 20 K), whereas those based on thin-film STO show similar but weaker effects with increasing temperature. Under dc bias, both types of waveguides show reduced refractive index, but dissipation increases in the case of single-crystal STO, while it decreases in the case of STO thin-films.

  12. Growth of large naphthalene and anthracene single-crystal sheets at the liquid–air interface

    SciTech Connect (OSTI)

    Postnikov, V. A.; Chertopalov, S. V.

    2015-07-15

    The growth of organic single crystals of naphthalene (C{sub 10}H{sub 8}) and anthracene (C{sub 14}H{sub 10}) at the liquid‒air interface from a mixture of solvents has been investigated. The growth technique used in the study makes it possible to obtain single-crystal sheets up to 10 mm in size for 24 h. The surface morphology and structure of the crystals have been analyzed by optical microscopy and X-ray diffraction. C{sub 10}H{sub 8} and C{sub 14}H{sub 10} single crystals grow coplanarly along the (001) plane. A thermodynamic model of the flat-crystal nucleus formation at the liquid‒air interface, based on the analysis of the change in the free Gibbs energy, is considered.

  13. Research on stable, high-efficiency amorphous silicon multijunction modules. Annual subcontract report, 1 December 1991--31 October 1992

    SciTech Connect (OSTI)

    Ghosh, M.; DelCueto, J.: Kampas, F.; Xi, J.

    1993-02-01

    This report describes results from the first phase of a three-phase contract for the development of stable, high-efficiency, same-band-gap, amorphous silicon (a-Si) multijunction photovoltaic (PV) modules. The program involved improving the properties of individual layers of semiconductor and non-semiconductor materials and small-area single-junction and multijunction devices, as well as the multijunction modules. The semiconductor materials research was performed on a-Si p, i, and n layers, and on microcrystalline silicon n layers. These were deposited using plasma-enhanced chemical vapor deposition. The non-semiconductor materials studied were tin oxide, for use as a transparent-conducting-oxide (TCO), and zinc oxide, for use as a back reflector and as a buffer layer between the TCO and the semiconductor layers. Tin oxide was deposited using atmospheric-pressure chemical vapor deposition. Zinc oxide was deposited using magnetron sputtering. The research indicated that the major challenge in the fabrication of a-Si multijunction PV modules is the contact between the two p-i-n cells. A structure that has low optical absorption but that also facilitates the recombination of electrons from the first p-i-n structure with holes from the second p-i-n structure is required. Non-semiconductor layers and a-Si semiconductor layers were tested without achieving the desired result.

  14. Performance of a silicon photovoltaic module under enhanced illumination and selective filtration of incoming radiation with simultaneous cooling

    SciTech Connect (OSTI)

    Maiti, Subarna; Vyas, Kairavi; Ghosh, Pushpito K.

    2010-08-15

    A promising option to reduce the cost of silicon photovoltaic systems is to concentrate the sunlight incident on the solar cells to increase the output power. However, this leads to higher module temperatures which affects performance adversely and may also cause long term damage. Proper cooling is therefore necessary to operate the system under concentrated radiation. The present work was undertaken to circumvent the problem in practical manner. A suitable liquid, connected to a heat exchanger, was placed in the housing of the photovoltaic module and unwanted wavelengths of solar radiation were filtered out to minimise overheating of the cells. The selection of the liquid was based on factors such as boiling point, transparency towards visible radiation, absorption of infrared and ultraviolet radiation, stability, flow characteristics, heat transfer properties, and electrical nonconductivity. Using a square parabolic type reflector, more than two fold increase in output power was realised on a clear sunny day employing a 0.13 m{sup 2} silicon solar module. Without the cooling arrangement the panel temperature rose uncontrollably. (author)

  15. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

    DOE Patents [OSTI]

    Charache, G.W.; Baldasaro, P.F.; Nichols, G.J.

    1998-06-23

    A thermophotovoltaic energy conversion device and a method for making the device are disclosed. The device includes a substrate formed from a bulk single crystal material having a bandgap (E{sub g}) of 0.4 eV < E{sub g} < 0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers. 12 figs.

  16. Iron-based composition for magnetocaloric effect (MCE) applications and method of making a single crystal

    DOE Patents [OSTI]

    Evans, III, Boyd Mccutchen; Kisner, Roger A.; Ludtka, Gail Mackiewicz; Ludtka, Gerard Michael; Melin, Alexander M.; Nicholson, Donald M.; Parish; , Chad M.; Rios, Orlando; Sefat, Athena S.; West, David L.; Wilgen, John B.

    2016-02-09

    A method of making a single crystal comprises heating a material comprising magnetic anisotropy to a temperature T sufficient to form a melt of the material. A magnetic field of at least about 1 Tesla is applied to the melt at the temperature T, where a magnetic free energy difference .DELTA.G.sub.m between different crystallographic axes is greater than a thermal energy kT. While applying the magnetic field, the melt is cooled at a rate of about 30.degree. C./min or higher, and the melt solidifies to form a single crystal of the material.

  17. Intrinsic stage I crack propagation in Al-Zn-Mg single crystals

    SciTech Connect (OSTI)

    Petit, J.; Kosche, K.; Gudladt, H.J. Daimler-Benz AG, Stuttgart, Max-Planck-Institut fuer Metallforschung, Stuttgart, )

    1992-04-01

    A clear identification has been achieved for intrinsic stage I fatigue-crack propagation in single crystals of a high-purity Al-Zn-Mg alloy. The intrinsic stage I regime is noted to be much faster than intrinsic stage II for comparable loading conditions. The 'shielding' effect related to stage I-like propagation is significantly more important than anticipated on the basis of the conventional comparison to stage II. The propagation of a small surface crack growing in stage I is comparable to that of intrinsic stage I in single crystals rather than to either stage I or stage II in polycrystals. 11 refs.

  18. Ultrafast Dynamic Response of Single Crystal PETN and Beta-HMX (Conference)

    Office of Scientific and Technical Information (OSTI)

    | SciTech Connect Dynamic Response of Single Crystal PETN and Beta-HMX Citation Details In-Document Search Title: Ultrafast Dynamic Response of Single Crystal PETN and Beta-HMX Authors: Zaug, J M ; Armstrong, M R ; Crowhurst, J C ; Feranti, L ; Swan, R ; Gross, R ; Teshlich, N E ; Wall, M ; Austin, R A ; Fried, L E Publication Date: 2014-06-30 OSTI Identifier: 1149550 Report Number(s): LLNL-CONF-656341 DOE Contract Number: DE-AC52-07NA27344 Resource Type: Conference Resource Relation:

  19. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

    DOE Patents [OSTI]

    Charache, Greg W.; Baldasaro, Paul F.; Nichols, Greg J.

    1998-01-01

    A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eVsingle crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers.

  20. The Present and Future Silver Cost Component in Crystalline Silicon PV Module Manufacturing

    Broader source: Energy.gov [DOE]

    This paper seeks to determine how increased c-Si PV module production might affect future silver demand and prices, as well as the impacts on total c-Si module manufacturing costs. To evaluate how...

  1. Optical characteristics of ZnO single crystal grown by the hydrothermal method

    SciTech Connect (OSTI)

    Chen, G. Z.; Yin, J. G. E-mail: yjg@siom.ac.cn; Zhang, L. H.; Zhang, P. X.; Wang, X. Y.; Liu, Y. C.; Zhang, C. L.; Gu, S. L.; Hang, Y.

    2015-12-15

    ZnO single crystals have been grown by the hydrothermal method. Raman scattering and Photoluminescence spectroscopy (PL) have been used to study samples of ZnO that were unannealed or annealed in different ambient gases. It is suggested that the green emission may originate from defects related to copper in our samples.

  2. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2008-09-01

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  3. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2005-11-01

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  4. Carousel Trackers with 1-Sun or 3-Sun Modules for Commercial Building Rooftops

    SciTech Connect (OSTI)

    Gehl, Anthony C; Maxey, L Curt; Fraas, Dr. Lewis; Avery, James E.; Minkin, Leonid M; Huang, H,

    2008-01-01

    The goal is lower cost solar electricity. Herein, two evolutional steps are described toward achieving this goal. The first step is to follow the sun with a solar tracker. Herein, a carousel tracker is described for mounting on commercial building flat rooftops in order to produce more kWh per kW relative to fixed PV modules. The second evolutionary improvement is to produce lower cost 3-sun CPV modules where two thirds of the expensive single crystal silicon material is replaced by less expensive mirror material. This paper describes the performance and durability of two prototype installations demonstrating these evolutionary innovations. In the first case, the installation and operation of 2 carousels equipped with traditional flat plate modules is described. In the second case, the operation of a carousel equipped with new 3-sun CPV modules is described. Both systems have been operating as expected for several months through the winter of 2007.

  5. Epitaxial single-crystal thin films of MnxTi1-xO2-δ grown on...

    Office of Scientific and Technical Information (OSTI)

    Epitaxial single-crystal thin films of MnxTi1-xO2- grown on (rutile)TiO2 substrates with ... Title: Epitaxial single-crystal thin films of MnxTi1-xO2- grown on (rutile)TiO2 ...

  6. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Semiannual technical report, 1 January 1996--30 June 1996

    SciTech Connect (OSTI)

    Wohlgemuth, J.

    1997-01-01

    Two specific objectives of Solarex`s program are to reduce the manufacturing cost for polycrystalline silicon photovoltaic modules to less than $1.20/watt and to increase the manufacturing capacity by a factor of three. This report highlights accomplishments during the period of January 1 through June 30, 1996. Accomplishments include: began the conversion of production casting stations to increase ingot size; operated the wire saw in a production mode with higher yields and lower costs than achieved on the ID saws; developed and qualified a new wire guide coating material that doubles the wire guide lifetime and produces significantly less scatter in wafer thickness; completed a third pilot run of the cost-effective Al paste back-surface-field (BSF) process, verifying a 5% increase in cell efficiency and demonstrating the ability to process and handle the BSF paste cells; completed environmental qualification of modules using cells produced by an all-print metallization process; optimized the design of the 15.2-cm by 15.2-cm polycrystalline silicon solar cells; demonstrated the application of a high-efficiency process in making 15.2-cm by 15.2-cm solar cells; demonstrated that cell efficiency increases with decreasing wafer thickness for the Al paste BSF cells; qualified a vendor-supplied Tedlar/ethylene vinyl acetate (EVA) laminate to replace the combination of separate sheets of EVA and Tedlar backsheet; demonstrated the operation of a prototype unit to trim/lead attach/test modules; and demonstrated the operation of a wafer pull-down system for cassetting wet wafers.

  7. Silicon on insulator self-aligned transistors

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  8. Investigation on crystalline perfection, mechanical, piezoelectric and ferroelectric properties of L-tartaric acid single crystal

    SciTech Connect (OSTI)

    Murugan, G. Senthil Ramasamy, P.

    2014-04-24

    Polar organic nonlinear optical material, L-tartaric acid single crystals have been grown from slow evaporation solution growth technique. Single crystal X-ray diffraction study indicates that the grown crystal crystallized in monoclinic system with space group P2{sub 1}. Crystalline perfection of the crystal has been evaluated by high resolution X-ray diffraction technique and it reveals that the crystal quality is good and free from structural grain boundaries. Mechanical stability of the crystal has been analyzed by Vickers microhardness measurement and it exhibits reverse indentation size effect. Piezoelectric d{sub 33} co-efficient for the crystal has been examined and its value is 47 pC/N. The ferroelectric behaviour of the crystal was analyzed by polarization-electric field hysteresis loop measurement.

  9. Method for preparing homogeneous single crystal ternary III-V alloys

    DOE Patents [OSTI]

    Ciszek, Theodore F.

    1991-01-01

    A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition that would freeze into the desired crystal composition. The alloy of the floating crucilbe is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.

  10. DIRECT OBSERVATION OF THE ALPHA-EPSILON TRANSITION IN SHOCKED SINGLE CRYSTAL IRON

    SciTech Connect (OSTI)

    Kalantar, D H; Collins, G W; Colvin, J D; Davies, H M; Eggert, J H; Hawreliak, J; Lorenzana, H E; Meyers, M A; Rosolankova, K; Schneider, M S; Sheppard, J; Stolken, J S; Wark, J S

    2005-08-23

    In-situ x-ray diffraction was used to study the response of single crystal iron under shock conditions. Measurements of the response of [001] iron showed a uniaxial compression of the initially bcc lattice along the shock direction by up to 6% at 13 GPa. Above this pressure, the lattice responded with a further collapse of the lattice by 15-18% and a transformation to a hcp structure. The in-situ measurements are discussed and results summarized.

  11. Dependence of dynamic fracture resistance on crack velocity in tungsten: Pt. 1. Single crystals

    SciTech Connect (OSTI)

    Liv, J.M.; Shen, B.W.

    1984-06-01

    The dependence of dynamic fracture resistance on crack propagation velocity on (100) in tungsten has been examined. A correlation is obtained between the measured local crack velocity with the surfac and subsurface deformations. Based on the experimental results on one pass, two passes, and prestrained, electron beam zone refined single crystals, a discussion is given on the slip modes activated at the crack tip, the contributions to the dynamic fracture resistance from dislocations and surface features and from the preexisting deformed microstructure.

  12. Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

    SciTech Connect (OSTI)

    Altukhov, A. A.; Vikharev, A. L.; Gorbachev, A. M.; Dukhnovsky, M. P.; Zemlyakov, V. E.; Ziablyuk, K. N.; Mitenkin, A. V.; Muchnikov, A. B. Radishev, D. B.; Ratnikova, A. K.; Fedorov, Yu. Yu.

    2011-03-15

    The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation annealing of diamond that provide the hole mobility of 1150 cm{sup 2} V{sup -1} s{sup -1} (the highest mobility obtained so far for semiconductor diamond after ion implantation) are given.

  13. Interdomain region in single-crystal lithium niobate bimorph actuators produced by light annealing

    SciTech Connect (OSTI)

    Kubasov, I. V. Timshina, M. S.; Kiselev, D. A.; Malinkovich, M. D.; Bykov, A. S.; Parkhomenko, Yu. N.

    2015-09-15

    The interdomain region of a bidomain strucrture formed in 127°-cut lithium niobate single crystals using light annealing has been studied by optical and scanning probe microscopies. A periodic subdomain structure on the 180° macrodomain wall is visualized by piezoresponse force microscopy. The piezoresponse signal (polarization) is shown to be a power-law function of the domain width with an exponent n = 0.53.

  14. Precise orientation of single crystals by a simple x-ray diffraction rocking curve method

    SciTech Connect (OSTI)

    Doucette, L.D.; Pereira da Cunha, M.; Lad, R.J.

    2005-03-01

    A simple method has been developed for accurately measuring the crystallographic orientation of a single crystal boule, employing a conventional four-circle x-ray diffraction arrangement in the rocking curve mode which relaxes the need for precise instrument and/or reference alignment. By acquiring a total of eight rocking curve measurements at specific orientations about the specimen azimuth, the absolute miscut angle between a crystal surface and the desired crystallographic plane can be resolved to within {+-}0.01 deg.

  15. Enhancing ionic conductivity of bulk single-crystal yttria-stabilized zirconia by tailoring dopant distribution

    SciTech Connect (OSTI)

    Lee, E.; Prinz, F. B.; Cai, W.

    2011-02-11

    We present an ab initiobased kinetic Monte Carlo model for ionic conductivity in single-crystal yttria-stabilized zirconia. Ionic interactions are taken into account by combining density functional theory calculations and the cluster expansion method and are found to be essential in reproducing the effective activation energy observed in experiments. The model predicts that the effective energy barrier can be reduced by 0.150.25 eV by arranging the dopant ions into a superlattice.

  16. Growth and characterization of 4-chloro-3-nitrobenzophenone single crystals using vertical Bridgman technique

    SciTech Connect (OSTI)

    Aravinth, K. Babu, G. Anandha Ramasamy, P.

    2014-04-24

    4-chloro-3-nitrobenzophenone (4C3N) has been grown by using vertical Bridgman technique. The grown crystal was confirmed by Powder X-ray diffraction analysis. The crystalline perfection of the grown crystal was examined by high-resolution X-ray diffraction study. The fluorescence spectra of grown 4C3N single crystals exhibit emission peak at 575 nm. The micro hardness measurements were used to analyze the mechanical property of the grown crystal.

  17. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, H.; Lei, H.; Klobes, B.; Warren, J. B.; Hermann, R. P.; Petrovic, C.

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  18. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    DOE Patents [OSTI]

    Vertes, Akos; Walker, Bennett N.

    2012-02-07

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  19. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    DOE Patents [OSTI]

    Vertes, Akos; Walker, Bennett N.

    2013-09-10

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  20. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    DOE Patents [OSTI]

    Vertes, Akos; Walker, Bennett N

    2015-04-07

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  1. Mechanisms of High Temperature/Low Stress Creep of Ni-Based Superalloy Single Crystals

    SciTech Connect (OSTI)

    Michael J. Mills

    2009-03-05

    Cast nickel-based superalloys are used for blades in land-based, energy conversion and powerplant applications, as well as in aircraft gas turbines operating at temperatures up to 1100 C, where creep is one of the life-limiting factors. Creep of superalloy single crystals has been extensively studied over the last several decades. Surprisingly, only recently has work focused specifically on the dislocation mechanisms that govern high temperature and low stress creep. Nevertheless, the perpetual goal of better engine efficiency demands that the creep mechanisms operative in this regime be fully understood in order to develop alloys and microstructures with improved high temperature capability. At present, the micro-mechanisms controlling creep before and after rafting (the microstructure evolution typical of high temperature creep) has occurred have yet to be identified and modeled, particularly for [001] oriented single crystals. This crystal orientation is most interesting technologically since it exhibits the highest creep strength. The major goal of the program entitled ''Mechanisms of High Temperature/Low Stress Creep of Ni-Based Superalloy Single Crystals'' (DOE Grant DE-FG02-04ER46137) has been to elucidate these creep mechanisms in cast nickel-based superalloys. We have utilized a combination of detailed microstructure and dislocation substructure analysis combined with the development of a novel phase-field model for microstructure evolution.

  2. Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Paulauskas, I. E.; Jellison, G. E.; Boatner, L. A.; Brown, G. M.

    2011-01-01

    The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with themore » significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.« less

  3. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2006-08-01

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  4. Study of radial growth rate and size control of silicon nanocrystals in square-wave-modulated silane plasmas

    SciTech Connect (OSTI)

    Nguyen-Tran, Th.; Roca i Cabarrocas, P.; Patriarche, G.

    2007-09-10

    The growth of silicon nanocrystals in high pressure and high dilution silane plasmas is investigated by using the temporal evolution of the self-bias on the radio frequency electrode and transmission electron microscopy. A square-wave-modulated plasma was used in order to control the growth of monodispersed nanoparticles with sizes smaller than 12 nm. To this end, the plasma on time was kept below 1 s. The radial growth rate of nanoparticles was varied in the range from 7.5 to 75 nm/s by changing silane partial pressure. Nanoparticles grown in silane-helium discharges have been found amorphous while they are crystalline in silane-hydrogen-argon discharges. Surprisingly, the crystallization in the gaseous phase does not depend on how slow or fast the particles grow but on the presence of atomic hydrogen.

  5. Considerations for a Standardized Test for Potential-Induced Degradation of Crystalline Silicon PV Modules (Presentation)

    SciTech Connect (OSTI)

    Hacke, P.

    2012-03-01

    Over the past decade, there have been observations of module degradation and power loss because of the stress that system voltage bias exerts. This results in part from qualification tests and standards note adequately evaluating for the durability of modules to the long-term effects of high voltage bias that they experience in fielded arrays. This talk deals with factors for consideration, progress, and information still needed for a standardized test for degradation due to system voltage stress.

  6. Solid-state syntheses and single-crystal characterizations of three tetravalent thorium and uranium silicates

    SciTech Connect (OSTI)

    Jin, Geng Bang Soderholm, L.

    2015-01-15

    Colorless crystals of ThSiO{sub 4} (huttonite) (1) and (Ca{sub 0.5}Na{sub 0.5}){sub 2}NaThSi{sub 8}O{sub 20} (2) have been synthesized by the solid-state reactions of ThO{sub 2}, CaSiO{sub 3}, and Na{sub 2}WO{sub 4} at 1073 K. Green crystals of (Ca{sub 0.5}Na{sub 0.5}){sub 2}NaUSi{sub 8}O{sub 20} (3) have been synthesized by the solid-state reactions of UO{sub 2}, CaSiO{sub 3}, and Na{sub 2}WO{sub 4} at 1003 K. All three compounds have been characterized by single-crystal X-ray diffraction. Compound 1 adopts a monazite-type three-dimensional condensed structure, which is built from edge- and corner-shared ThO{sub 9} polyhedra and SiO{sub 4} tetrahedra. Compounds 2 and 3 are isostructural and they crystallize in a steacyite-type structure. The structure consists of discrete pseudocubic [Si{sub 8}O{sub 20}]{sup 8−} polyanions, which are connected by An{sup 4+} cations into a three-dimensional framework. Each An atom coordinates to eight monodentate [Si{sub 8}O{sub 20}]{sup 8−} moieties in a square antiprismatic geometry. Na{sup +} and Ca{sup 2+} ions reside in the void within the framework. Raman spectra of 1, 2, and 3 were collected on single crystal samples. 1 displays more complex vibrational bands than thorite. Raman spectra of 2 and 3 are analogous with most of vibrational bands located at almost the same regions. - Graphical abstract: A Raman spectrum and crystal structures of (Ca{sub 0.5}Na{sub 0.5}){sub 2}NaAnSi{sub 8}O{sub 20} (An=Th, U), which contain pseudocubic [Si{sub 8}O{sub 20}]{sup 8−} polyanions and eight-coordinate An{sup 4+} cations. - Highlights: • Single crystal growth of three tetravalent actinide silicates from melts. • Single-crystal structures and Raman spectra of (Ca{sub 0.5}Na{sub 0.5}){sub 2}NaAnSi{sub 8}O{sub 20} (An=Th, U). • First report of Raman spectrum of huttonite on single crystal samples.

  7. Divalent europium doped and un-doped calcium iodide scintillators: Scintillator characterization and single crystal growth

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boatner, L. A.; Ramey, J. O.; Kolopus, J. A.; Neal, John S.

    2015-02-21

    Initially, the alkaline-earth scintillator, CaI2:Eu2+, was discovered around 1964 by Hofstadter, Odell, and Schmidt. Serious practical problems quickly arose, however, that were associated with the growth of large monolithic single crystals of this material due to its lamellar, mica-like structure. As a result of its theoretically higher light yield, CaI2:Eu2+ has the potential to exceed the excellent scintillation performance of SrI2:Eu2+. In fact, theoretical predictions for the light yield of CaI2:Eu2+ scintillators suggested that an energy resolution approaching 2% at 662 keV could be achievable. Like the early SrI2:Eu2+ scintillator, the performance of CaI2:Eu2+ scintillators has traditionally suffered due, atmore » least in part, to outdated materials synthesis, component stoichiometry/purity, and single-crystal-growth techniques. Based on our recent work on SrI2:Eu2+ scintillators in single-crystal form, we have developed new techniques that are applied here to CaI2:Eu2+ and pure CaI2 with the goal of growing large un-cracked crystals and, potentially, realizing the theoretically predicted performance of the CaI2:Eu2+ form of this material. Calcium iodide does not adhere to modern glassy carbon Bridgman crucibles - so there should be no differential thermal-contraction-induced crystal/crucible stresses on cooling that would result in crystal cracking of the lamellar structure of CaI2. Here we apply glassy carbon crucible Bridgman growth, high-purity growth-charge compounds, our molten salt processing/filtration technique, and extended vacuum-melt-pumping methods to the growth of both CaI2:Eu2+ and un-doped CaI2. Moreover, large scintillating single crystals were obtained, and detailed characterization studies of the scintillation properties of CaI2:Eu2+ and pure CaI2 single crystals are presented that include studies of the effects of plastic deformation of the crystals on the scintillator performance.« less

  8. Performance of 3-Sun Mirror Modules on Sun Tracking Carousels on Flat Roof Buildings

    SciTech Connect (OSTI)

    Fraas, Dr. Lewis; Avery, James E.; Minkin, Leonid M; Maxey, L Curt; Gehl, Anthony C; Hurt, Rick A; Boehm, Robert F

    2008-01-01

    Commercial buildings represent a near term market for cost competitive solar electric power provided installation costs and solar photovoltaic module costs can be reduced. JX Crystals has developed a carousel sun tracker that is prefabricated and can easily be deployed on building flat roof tops without roof penetration. JX Crystals is also developing 3-sun PV mirror modules where less expensive mirrors are substituted for two-thirds of the expensive single crystal silicon solar cell surface area. Carousels each with four 3-sun modules have been set up at two sites, specifically at Oak Ridge National Lab and at the University of Nevada in Las Vegas. The test results for these systems are presented.

  9. Single crystal neutron diffraction study of the magnetic structure of TmNi{sub 2}B{sub 2}C

    SciTech Connect (OSTI)

    Sternlieb, B.; Shapiro, S.; Stassis, C.; Goldman, A.I.; Canfield, P.

    1997-02-01

    Neutron diffraction techniques have been used to study the magnetic structure of single crystals of the magnetic superconductor (T{sub c} {congruent} 11K) TmNi{sub 2}B{sub 2}C. We find that below approximately 1.5K the magnetic moments order in an incommensurate spin wave with propagation vector q{sub m} = q{sub m} (a* +b*) (or q{sub m} = q{sub m} (a* + b*)) with q{sub m} = 0.094 {+-} 0.001. The spin wave is transverse with the moments aligned along the c-axis, and the observation of relatively intense higher order harmonics shows that the modulation is not purely sinusoidal but considerably squared. This incommensurate magnetic structure, which coexists with superconductivity below T{sub N} {congruent} 1.5K, is quite different from those observed in the magnetic superconductors HoNi{sub 2}B{sub 2}C and ErNi{sub 2}B{sub 2}C. The origin of diffraction peaks observed in scans parallel to a* is briefly discussed.

  10. Millimeter size single crystals of superconducting YBa[sub 2]Cu[sub 3]O[sub x

    DOE Patents [OSTI]

    Damento, M.A.; Gschneidner, K.A. Jr.

    1989-04-25

    A method of growing large, up to 1 mm size single crystals of superconducting YBa[sub 2]Cu[sub 3]O[sub x], wherein x equals from 6.5 to 7.2 is disclosed.

  11. Millimeter size single crystals of superconducting YBa.sub.2 Cu.sub.3 O.sub .

    DOE Patents [OSTI]

    Damento, Michael A.; Gschneidner, Jr., Karl A.

    1989-04-25

    A method of growing large, up to 1 mm size single crystals of superconducting YBa.sub.2 Cu.sub.3 O.sub.x, wherein x equals from 6.5 to 7.2.

  12. Calculations of single crystal elastic constants for yttria partially stabilised zirconia from powder diffraction data

    SciTech Connect (OSTI)

    Lunt, A. J. G. Xie, M. Y.; Baimpas, N.; Korsunsky, A. M.; Zhang, S. Y.; Kabra, S.; Kelleher, J.; Neo, T. K.

    2014-08-07

    Yttria Stabilised Zirconia (YSZ) is a tough, phase-transforming ceramic that finds use in a wide range of commercial applications from dental prostheses to thermal barrier coatings. Micromechanical modelling of phase transformation can deliver reliable predictions in terms of the influence of temperature and stress. However, models must rely on the accurate knowledge of single crystal elastic stiffness constants. Some techniques for elastic stiffness determination are well-established. The most popular of these involve exploiting frequency shifts and phase velocities of acoustic waves. However, the application of these techniques to YSZ can be problematic due to the micro-twinning observed in larger crystals. Here, we propose an alternative approach based on selective elastic strain sampling (e.g., by diffraction) of grain ensembles sharing certain orientation, and the prediction of the same quantities by polycrystalline modelling, for example, the Reuss or Voigt average. The inverse problem arises consisting of adjusting the single crystal stiffness matrix to match the polycrystal predictions to observations. In the present model-matching study, we sought to determine the single crystal stiffness matrix of tetragonal YSZ using the results of time-of-flight neutron diffraction obtained from an in situ compression experiment and Finite Element modelling of the deformation of polycrystalline tetragonal YSZ. The best match between the model predictions and observations was obtained for the optimized stiffness values of C11 = 451, C33 = 302, C44 = 39, C66 = 82, C12 = 240, and C13 = 50 (units: GPa). Considering the significant amount of scatter in the published literature data, our result appears reasonably consistent.

  13. Advances in the growth of alkaline-earth halide single crystals for scintillator detectors

    SciTech Connect (OSTI)

    Boatner, Lynn A; Ramey, Joanne Oxendine; Kolopus, James A; Neal, John S; Cherepy, Nerine; Payne, Stephen A.; Beck, P; Burger, Arnold; Rowe, E; Bhattacharya, P.

    2014-01-01

    Alkaline-earth scintillators such as strontium iodide and other alkaline-earth halides activated with divalent europium represent some of the most efficient and highest energy resolution scintillators for use as gamma-ray detectors in a wide range of applications. These applications include the areas of nuclear nonproliferation, homeland security, the detection of undeclared nuclear material, nuclear physics and materials science, medical diagnostics, space physics, high energy physics, and radiation monitoring systems for first responders, police, and fire/rescue personnel. Recent advances in the growth of large single crystals of these scintillator materials hold the promise of higher crystal yields and significantly lower detector production costs. In the present work, we describe new processing protocols that, when combined with our molten salt filtration methods, have led to advances in achieving a significant reduction of cracking effects during the growth of single crystals of SrI2:Eu2+. In particular, we have found that extended pumping on the molten crystal-growth charge under vacuum for time periods extending up to 48 hours is generally beneficial in compensating for variations in the alkaline-earth halide purity and stoichiometry of the materials as initially supplied by commercial sources. These melt-pumping and processing techniques are now being applied to the purification of CaI2:Eu2+ and some mixed-anion europium-doped alkaline-earth halides prior to single-crystal growth by means of the vertical Bridgman technique. The results of initial studies of the effects of aliovalent doping of SrI2:Eu2+ on the scintillation characteristics of this material are also described.

  14. Shock compression modeling of metallic single crystals: comparison of finite difference, steady wave, and analytical solutions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lloyd, Jeffrey T.; Clayton, John D.; Austin, Ryan A.; McDowell, David L.

    2015-07-10

    Background: The shock response of metallic single crystals can be captured using a micro-mechanical description of the thermoelastic-viscoplastic material response; however, using a such a description within the context of traditional numerical methods may introduce a physical artifacts. Advantages and disadvantages of complex material descriptions, in particular the viscoplastic response, must be framed within approximations introduced by numerical methods. Methods: Three methods of modeling the shock response of metallic single crystals are summarized: finite difference simulations, steady wave simulations, and algebraic solutions of the Rankine-Hugoniot jump conditions. For the former two numerical techniques, a dislocation density based framework describes themore » rate- and temperature-dependent shear strength on each slip system. For the latter analytical technique, a simple (two-parameter) rate- and temperature-independent linear hardening description is necessarily invoked to enable simultaneous solution of the governing equations. For all models, the same nonlinear thermoelastic energy potential incorporating elastic constants of up to order 3 is applied. Results: Solutions are compared for plate impact of highly symmetric orientations (all three methods) and low symmetry orientations (numerical methods only) of aluminum single crystals shocked to 5 GPa (weak shock regime) and 25 GPa (overdriven regime). Conclusions: For weak shocks, results of the two numerical methods are very similar, regardless of crystallographic orientation. For strong shocks, artificial viscosity affects the finite difference solution, and effects of transverse waves for the lower symmetry orientations not captured by the steady wave method become important. The analytical solution, which can only be applied to highly symmetric orientations, provides reasonable accuracy with regards to prediction of most variables in the final shocked state but, by construction, does not provide

  15. The effect of interelement dipole coupling in patterned ultrathin single crystal Fe square arrays

    SciTech Connect (OSTI)

    Sun Li; Zhai Ya; Wong Pingkwanj; Zhang Wen; Xu Yongbing; Zou Xiao; Wu Jing; Luo Linqiang; Zhai Hongru

    2011-02-01

    The correlation between the magnetic properties and the interelement separation in patterned arrays of ultrathin single crystal Fe films of 12 monolayers (ML) grown on GaAs(100) has been studied. The critical condition to form single domain remanent states in the square elements was found to be 10 {mu}m in size and 20 {mu}m for the interelement separation. The coercivity was also found to increase with the increasing interelement separation in the patterned arrays. These results are attributed to the competition between the large in-plane uniaxial anisotropy, the demagnetizing field, and interelement dipole coupling as determined semiqualitatively by the ferromagnetic resonance measurements.

  16. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    SciTech Connect (OSTI)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides.

  17. Comparative study of broadband electrodynamic properties of single-crystal and thin-film strontium titanate

    SciTech Connect (OSTI)

    Findikoglu, A. T.; Jia, Q. X.; Kwon, C.; Reagor, D. W.; Kaduchak, G.; Rasmussen, K. Oe.; Bishop, A. R.

    1999-12-27

    We have used a coplanar waveguide structure to study broadband electrodynamic properties of single-crystal and thin-film strontium titanate. We have incorporated both time- and frequency-domain measurements to determine small-signal effective refractive index and loss tangent as functions of frequency (up to 4 GHz), dc bias (up to 10{sup 6} V/m), and cryogenic temperature (17 and 60 K). The large-signal impulse response of the devices and the associated phenomenological nonlinear wave equation illustrate how dissipation and nonlinearity combine to produce the overall response in the large-signal regime. (c) 1999 American Institute of Physics.

  18. Giant increase in critical current density of KxFe2-ySe₂ single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lei, Hechang; Petrovic, C.

    2011-12-28

    The critical current density Jabc of KxFe2-ySe₂ single crystals can be enhanced by more than one order of magnitude, up to ~2.1×10⁴ A/cm² by the post annealing and quenching technique. A scaling analysis reveals the universal behavior of the normalized pinning force as a function of the reduced field for all temperatures, indicating the presence of a single vortex pinning mechanism. The main pinning sources are three-dimensional (3D) point-like normal cores. The dominant vortex interaction with pinning centers is via spatial variations in critical temperature Tc (“δTc pinning”).

  19. Electronic band structure imaging of three layer twisted graphene on single crystal Cu(111)

    SciTech Connect (OSTI)

    Marquez Velasco, J.; Department of Physics, National Technical University of Athens, Athens ; Kelaidis, N.; Xenogiannopoulou, E.; Tsoutsou, D.; Tsipas, P.; Speliotis, Th.; Pilatos, G.; Likodimos, V.; Falaras, P.; Dimoulas, A.; Raptis, Y. S.

    2013-11-18

    Few layer graphene (FLG) is grown on single crystal Cu(111) by Chemical Vapor Deposition, and the electronic valence band structure is imaged by Angle-Resolved Photo-Emission Spectroscopy. It is found that graphene essentially grows polycrystalline. Three nearly ideal Dirac cones are observed along the Cu ?{sup }K{sup } direction in k-space, attributed to the presence of ?4 twisted three layer graphene with negligible interlayer coupling. The number of layers and the stacking order are compatible with Raman data analysis demonstrating the complementarity of the two techniques for a more accurate characterization of FLG.

  20. Metal oxide superconducting powder comprised of flake-like single crystal particles

    DOE Patents [OSTI]

    Capone, Donald W.; Dusek, Joseph

    1994-01-01

    Powder of a ceramic superconducting material is synthesized such that each particle of the powder is a single crystal having a flake-like, nonsymmetric morphology such that the c-axis is aligned parallel to the short dimension of the flake. Nonflake powder is synthesized by the normal methods and is pressed into pellets or other shapes and fired for excessive times to produce a coarse grained structure. The fired products are then crushed and ground producing the flake-like powder particles which exhibit superconducting characteristics when aligned with the crystal lattice.

  1. Magnetization Reversal Process of Single Crystal α-Fe Containing a Nonmagnetic Particle

    SciTech Connect (OSTI)

    Li, Yi; Xu, Ben; Hu, Shenyang Y.; Li, Yulan; Li, Qiu-Lin; Liu, Wei

    2015-09-25

    The magnetization reversal process and hysteresis loops in a single crystal α-iron with nonmagnetic particles are simulated in this work based on the Landau-Lifshitz–Gilbert equation. The evolutions of the magnetic domain morphology are studied, and our analyses show that the magnetization reversal process is affected by the interaction between the moving domain wall and the existing nonmagnetic particles. This interaction strongly depends on the size of the particles, and it is found that particles with a particular size contribute the most to magnetic hardening.

  2. Dielectric and magnetic investigations of GaFeO{sub 3} single crystals

    SciTech Connect (OSTI)

    Srimathy, B. Bhaumik, Indranil Ganesamoorthy, S. Karnal, A. K. Kumar, J.

    2014-04-24

    Structural, dielectric and magnetic properties have been investigated for the polar ferrimagnet, GaFeO{sub 3} single crystals grown by optical floating zone technique. Phase formation was confirmed from X-ray diffraction. Hopping conduction mechanism of Fe{sup 2+} ions and oxygen vacancies contribute to the electric polarization and dielectric constant of the material. Disorderness in the cation site gives rise to the magnetic ordering and the splitting in the zero field cooled (ZFC) and field cooled (FC) magnetization curves reveals the movement of the domain walls.

  3. Metal oxide superconducting powder comprised of flake-like single crystal particles

    DOE Patents [OSTI]

    Capone, D.W.; Dusek, J.

    1994-10-18

    Powder of a ceramic superconducting material is synthesized such that each particle of the powder is a single crystal having a flake-like, nonsymmetric morphology such that the c-axis is aligned parallel to the short dimension of the flake. Nonflake powder is synthesized by the normal methods and is pressed into pellets or other shapes and fired for excessive times to produce a coarse grained structure. The fired products are then crushed and ground producing the flake-like powder particles which exhibit superconducting characteristics when aligned with the crystal lattice. 3 figs.

  4. Modules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Modules Modules Modules Approach to Managing The Environment Modules is a system which you can use to specify what software you want to use. If you want to use a particular software package loading its module will take care of the details of modifying your environment as necessary. The advantage of the modules approach is that the you are not required to explicitly specify paths for different executable versions and try to keep their related man paths and environment variables coordinated.

  5. Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond

    SciTech Connect (OSTI)

    Hemawan, Kadek W. Hemley, Russell J.

    2015-11-15

    A key aspect of single crystal diamond growth via microwave plasma chemical vapor deposition is in-process control of the local plasma–substrate environment, that is, plasma gas phase concentrations of activated species at the plasma boundary layer near the substrate surface. Emission spectra of the plasma relative to the diamond substrate inside the microwave plasma reactor chamber have been analyzed via optical emission spectroscopy. The spectra of radical species such as CH, C{sub 2}, and H (Balmer series) important for diamond growth were identified and analyzed. The emission intensities of these electronically excited species were found to be more dependent on operating pressure than on microwave power. Plasma gas temperatures were calculated from measurements of the C{sub 2} Swan band (d{sup 3}Π → a{sup 3}Π transition) system. The plasma gas temperature ranges from 2800 to 3400 K depending on the spatial location of the plasma ball, microwave power and operating pressure. Addition of Ar into CH{sub 4}+H{sub 2} plasma input gas mixture has little influence on the Hα, Hβ, and Hγ intensities and single-crystal diamond growth rates.

  6. Temperature and field induced strain measurements in single crystal Gd5Si2Ge2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    McCall, S. K.; Nersessian, N.; Carman, G. P.; Pecharsky, V. K.; Schlagel, D. L.; Radousky, H. B.

    2016-03-29

    The first-order magneto-structural transformation that occurs in Gd5Si2Ge2 near room temperature makes it a strong candidate for many energy harvesting applications. Understanding the single crystal properties is crucial for allowing simulations of device performance. In this study, magnetically and thermally induced transformation strains were measured in a single crystal of Gd5Si2.05Ge1.95 as it transforms from a high-temperature monoclinic paramagnet to a lower-temperature orthorhombic ferromagnet. Thermally induced transformation strains of –8500 ppm, +960 ppm and +1800 ppm, and magnetically induced transformation strains of –8500 ppm, +900 ppm and +2300 ppm were measured along the a, b and c axes, respectively. Furthermore,more » using experimental data coupled with general thermodynamic considerations, a universal phase diagram was constructed showing the transition from the monoclinic to the orthorhombic phase as a function of temperature and magnetic field.« less

  7. Growth and characterization of new semiorganic nonlinear optical and piezoelectric lithium sulfate monohydrate oxalate single crystals

    SciTech Connect (OSTI)

    Yadav, Harsh; Sinha, Nidhi; Kumar, Binay

    2015-04-15

    Highlights: • A new semiorganic single crystal of LSO grown by slow evaporation technique. • Morphological studies of the LSO crystal deduced by BFDH law. • In the UV–vis spectrum wide transparent region and large band gap were found. • SHG is equal to KDP crystal and d{sub 33} was found to be equal to 6pC/N. • Grown crystal belongs to softer category. - Abstract: New semiorganic crystal of lithium sulfate monohydrate oxalate (LSO) for nonlinear application was synthesized by controlled slow evaporation method. The growth rate of various planes of the grown crystal was estimated by morphological study. Single crystal XRD analysis confirmed that the crystal belongs to triclinic lattice with space group P1. High transparency (∼95%) with large band gap (4.57 eV) was analyzed by UV–vis studies. FTIR and Raman spectroscopy were used to identify various functional groups present in the LSO crystal. SHG efficiency was found to be equal to the KDP crystal. Thermal stability (up to 117.54 °C) and melting point (242 °C) of the crystal were studied by TG-DTA. In dielectric measurements, the value of dielectric constant decreases with increase in frequency. Hardness studies confirmed soft nature of crystals. The piezoelectric coefficient was found to be 6pC/N along [0 0 1].

  8. The local structure and ferromagnetism in Fe-implanted SrTiO? single crystals

    SciTech Connect (OSTI)

    Lobacheva, O. Chavarha, M.; Yiu, Y. M.; Sham, T. K.; Goncharova, L. V.

    2014-07-07

    We report a connection between the local structure of low-level Fe impurities and vacancies as the cause of ferromagnetic behavior observed in strontium titanate single crystals (STO), which were implanted with Fe and Si ions at different doses then annealed in oxygen. The effects of Fe doping and post-implantation annealing of STO were studied by X-ray Absorption Near Edge Structure (XANES) spectroscopy and Superconducting Quantum Interference Device magnetometry. XANES spectra for Fe and Ti K- and L-edge reveal the changes in the local environment of Fe and Ti following the implantation and annealing steps. The annealing in oxygen atmosphere partially healed implantation damages and changed the oxidation state of the implanted iron from metallic Fe? to Fe?/Fe? oxide. The STO single crystals were weak ferromagnets prior to implantation. The maximum saturation moment was obtained after our highest implantation dose of 210? Fe atom/cm, which could be correlated with the metallic Fe? phases in addition to the presence of O/Ti vacancies. After recrystallization annealing, the ferromagnetic response disappears. Iron oxide phases with Fe? and Fe? corresponding to this regime were identified and confirmed by calculations using Real Space Multiple Scattering program (FEFF9).

  9. Diffraction Profiles of Elasticity Bent Single Crystals with Constant Strain Gradients

    SciTech Connect (OSTI)

    Yan,H.; Kalenci, O.; Noyan, I.

    2007-01-01

    This work presents a set of equations that can be used to predict the dynamical diffraction profile from a non-transparent single crystal with a constant strain gradient examined in Bragg reflection geometry with a spherical incident X-ray beam. In agreement with previous work, the present analysis predicts two peaks: a primary diffraction peak, which would have still been observed in the absence of the strain gradient and which exits the specimen surface at the intersection point of the incident beam with the sample surface, and a secondary (mirage) peak, caused by the deflection of the wavefield within the material, which exits the specimen surface further from this intersection point. The integrated intensity of the mirage peak increases with increasing strain gradient, while its separation from the primary reflection peak decreases. The directions of the rays forming the mirage peak are parallel to those forming the primary diffraction peak. However, their spatial displacement might cause (fictitious) angular shifts in diffractometers equipped with area detectors or slit optics. The analysis results are compared with experimental data from an Si single-crystal strip bent in cantilever configuration, and the implications of the mirage peak for Laue analysis and high-precision diffraction measurements are discussed.

  10. Flux growth and magnetic properties of FeVO{sub 4} single crystals

    SciTech Connect (OSTI)

    He Zhangzhen Yamaura, Jun-Ichi; Ueda, Yutaka

    2008-09-15

    FeVO{sub 4} (I) single crystals are grown by the flux method using V{sub 2}O{sub 5} as the self-flux. The grown crystals exhibit a characteristic morphology with natural facets. The quality of the crystals is confirmed by X-ray diffraction and EPMA techniques. Magnetic properties are investigated by means of magnetic susceptibility, magnetization, and heat capacity measurements. Two magnetic phase transitions are observed at {approx}13 and {approx}20 K. Such unusual magnetic behaviors are suggested to originate from two different Fe ligand environments of octahedral FeO{sub 6} and trigonal bipyramidal FeO{sub 5} in a six-column doubly bent chain. - Graphical abstract: FeVO{sub 4} (I) single crystals are grown by the flux method using V{sub 2}O{sub 5} as the self-flux. Magnetic properties are investigated by means of magnetic susceptibility, magnetization, and heat capacity measurements, showing two magnetic phase transitions at {approx}13 and {approx}20 K.

  11. Demonstration of a Single-Crystal Reflector-Filter for Enhancing Slow Neutron Beams

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Muhrer, Guenter; Schönfeldt, Troels; Iverson, Erik B.; Mocko, Michal; Baxter, David V.; Hügle, Thomas; Gallmeier, Franz X.; Klinkby, Esben

    2016-06-14

    The cold polycrystalline beryllium reflector-filter concept has been used to enhance the cold neutron emission of cryogenic hydrogen moderators, while suppressing the intermediate wavelength and fast neutron emission at the same time. While suppressing the fast neutron emission is often desired, the suppression of intermediate wavelength neutrons is often unwelcome. It has been hypothesized that replacing the polycrystalline reflector-filter concept with a single-crystal reflector-filter concept would overcome the suppression of intermediate wavelength neutrons and thereby extend the usability of the reflector-filter concept to shorter but still important wavelengths. In this paper we present the first experimental data on a single-crystalmore » reflector-filter and compare experimental results with hypothesized performance. We find that a single-crystal reflector-filter retains the long-wavelength benefit of the polycrystalline reflector-filter, without suffering the same loss of important intermediate wavelength neutrons. Ultimately, this finding extends the applicability of the reflector-filter concept to intermediate wavelengths, and furthermore indicates that the reflector-filter benefits arise from its interaction with fast (background) neutrons, not with intermediate wavelength neutrons of potential interest in many types of neutron scattering.« less

  12. Cooperative Island Growth of Large Area Single-Crystal Graphene by Chemical Vapor Deposition on Cu

    SciTech Connect (OSTI)

    Regmi, Murari [Oak Ridge National Laboratory (ORNL); Rouleau, Christopher [Oak Ridge National Laboratory (ORNL); Puretzky, Alexander A [ORNL; Ivanov, Ilia N [ORNL; Geohegan, David B [ORNL; Chen, Jihua [ORNL; Eastman, Jeffrey [Argonne National Laboratory (ANL); Eres, Gyula [ORNL

    2014-01-01

    We describe a two-step approach for suppressing nucleation of graphene on Cu using chemical vapor deposition. In the first step, as received Cu foils are oxidized in air at temperatures up to 500 C to remove surface impurities and to induce the regrowth of Cu grains during subsequent annealing in H2 flow at 1040 C prior to graphene growth. In the second step, transient reactant cooling is performed by using a brief Ar pulse at the onset of growth to induce collisional deactivation of the carbon growth species. The combination of these two steps results in a three orders of magnitude reduction in the graphene nucleation density, enabling the growth of millimeter-size single crystal graphene grains. A kinetic model shows that suppressing nucleation promotes a cooperative island growth mode that favors the formation of large area single crystal graphene, and it is accompanied by a roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random nucleation growth.

  13. In-Situ Measurement of Crystalline Silicon Modules Undergoing Potential-Induced Degradation in Damp Heat Stress Testing for Estimation of Low-Light Power Performance

    SciTech Connect (OSTI)

    Hacke, P.; Terwilliger, K.; Kurtz, S.

    2013-08-01

    The extent of potential-induced degradation of crystalline silicon modules in an environmental chamber is estimated using in-situ dark I-V measurements and applying superposition analysis. The dark I-V curves are shown to correctly give the module power performance at 200, 600 and 1,000 W/m2 irradiance conditions, as verified with a solar simulator. The onset of degradation measured in low light in relation to that under one sun irradiance can be clearly seen in the module design examined; the time to 5% relative degradation measured in low light (200 W/m2) was 28% less than that of full sun (1,000 W/m2 irradiance). The power of modules undergoing potential-induced degradation can therefore be characterized in the chamber, facilitating statistical analyses and lifetime forecasting.

  14. Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

    DOE Patents [OSTI]

    Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

    1991-01-01

    A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

  15. Fabrication of Fe nanowires on yittrium-stabilized zirconia single crystal substrates by thermal CVD methods

    SciTech Connect (OSTI)

    Kawahito, A.; Yanase, T.; Endo, T.; Nagahama, T.; Shimada, T.

    2015-05-07

    Magnetic nanowires (NWs) are promising as material for use in spintronics and as the precursor of permanent magnets because they have unique properties due to their high aspect ratio. The growth of magnetic Fe whiskers was reported in the 1960s, but the diameter was not on a nanoscale level and the growth mechanism was not fully elucidated. In the present paper, we report the almost vertical growth of Fe NWs on a single crystal yttrium-stabilized zirconia (Y{sub 0.15}Zr{sub 0.85}O{sub 2}) by a thermal CVD method. The NWs show a characteristic taper part on the bottom growing from a trigonal pyramidal nucleus. The taper angle and length can be controlled by changing the growth condition in two steps, which will lead to obtaining uniformly distributed thin Fe NWs for applications.

  16. Single-crystal diamond refractive lens for focusing X-rays in two dimensions

    SciTech Connect (OSTI)

    Antipov, S.; Baryshev, Sergey; Butler, J. E.; Antipova, O.; Liu, Zunping; Stoupin, S.

    2016-01-01

    The fabrication and performance evaluation of single-crystal diamond refractive X-ray lenses of which the surfaces are paraboloids of revolution for focusing X-rays in two dimensions simultaneously are reported. The lenses were manufactured using a femtosecond laser micromachining process and tested using X-ray synchrotron radiation. Such lenses were stacked together to form a standard compound refractive lens (CRL). Owing to the superior physical properties of the material, diamond CRLs could become indispensable wavefront-preserving primary focusing optics for X-ray free-electron lasers and the next-generation synchrotron storage rings. They can be used for highly efficient refocusing of the extremely bright X-ray sources for secondary optical schemes with limited aperture such as nanofocusing Fresnel zone plates and multilayer Laue lenses.

  17. Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Asadchikov, Victor E.; Butashin, Andrey V.; Buzmakov, Alexey V.; Deryabin, Alexander N.; Kanevsky, Vladimir M.; Prokhorov, Igor A.; Roshchin, Boris S.; Volkov, Yuri O.; Zolotov, Dennis A.; Jafari, Atefeh; et al

    2016-03-22

    We report on the growth and characterization of several sapphire single crystals for the purpose of x-ray optics applications. Structural defects were studied by means of laboratory double-crystal X-ray diffractometry and white beam synchrotron-radiation topography. The investigations confirmed that the main defect types are dislocations. The best quality crystal was grown using the Kyropoulos technique with a dislocation density of 102-103 cm-2 and a small area with approximately 2*2 mm2 did not show dislocation contrast in many reflections and has suitable quality for application as a backscattering monochromator. As a result, a clear correlation between growth rate and dislocation densitymore » is observed, though growth rate is not the only parameter impacting the quality.« less

  18. Single crystal growth and characterization of the large-unit-cell compound Cu13Ba

    SciTech Connect (OSTI)

    Jesche, Anton; Budko, Serguei L.; Canfield, Paul C.

    2013-10-31

    Single crystals of Cu13Ba were successfully grown out of BaCu self flux. Temperature dependent magnetization, M (T ), electrical resistivity, ?(T)?(T), and specific heat, Cp(T)Cp(T), data are reported. Isothermal magnetization measurements, M(H)M(H), show clear de Haas-van Alphen oscillations at T = 2 K for applied fields as low as View the MathML source?0H=1T. An anomalous behavior of the magnetic susceptibility is observed up to T ? 50 K reflecting the effect of de Haas-van Alphen oscillations at fairly high temperatures. The field- and temperature-dependencies of the magnetization indicate the presence of diluted magnetic impurities with a concentration of the order of 0.01 at.%. Accordingly, the minimum and lower temperature rise observed in the electrical resistivity at and below T = 15 K is attributed to the Kondo-impurity effect.

  19. Time-dependent Protein-directed Growth of Gold Nanoparticles within a Single Crystal of Lysozyme

    SciTech Connect (OSTI)

    H Wei; Z Wang; J Zhang; S House; Y Gao; L Yang; H Robinson; L Tan; H Xing; C Hou

    2011-12-31

    Gold nanoparticles are useful in biomedical applications due to their distinct optical properties and high chemical stability. Reports of the biogenic formation of gold colloids from gold complexes has also led to an increased level of interest in the biomineralization of gold. However, the mechanism responsible for biomolecule-directed gold nanoparticle formation remains unclear due to the lack of structural information about biological systems and the fast kinetics of biomimetic chemical systems in solution. Here we show that intact single crystals of lysozyme can be used to study the time-dependent, protein-directed growth of gold nanoparticles. The protein crystals slow down the growth of the gold nanoparticles, allowing detailed kinetic studies to be carried out, and permit a three-dimensional structural characterization that would be difficult to achieve in solution. Furthermore, we show that additional chemical species can be used to fine-tune the growth rate of the gold nanoparticles.

  20. A photoemission study of the diamond and the single crystal C{sub 60}

    SciTech Connect (OSTI)

    Wu, Jin

    1994-03-01

    This report studied the elctronic structure of diamond (100) and diamond/metal interface and C{sub 60}, using angle-resolved and core level photoemission. The C(100)-(2X1) surface electronic structure was studied using both core level and angle resolved valence band photoemission spectroscopy. The surface component of the C 1s core level spectrum agrees with theoretical existence of only symmetrical dimers. In the case of metal/diamond interfaces, core level and valence photoelectron spectroscopy and LEED studies WERE MADE OF B and Sb on diamond (100) and (111) surfaces. In the case of single-crystal C{sub 60}, photoemission spectra show sharp molecular features, indicating that the molecular orbitals are relatively undisturbed in solid C{sub 60}.

  1. Detailed Surface Analysis Of Incremental Centrifugal Barrel Polishing (CBP) Of Single-Crystal Niobium Samples

    SciTech Connect (OSTI)

    Palczewski, Ari D.; Hui Tian; Trofimova, Olga; Reece, Charles E.

    2011-07-01

    We performed Centrifugal Barrel Polishing (CBP) on single crystal niobium samples/coupons housed in a stainless steel sample holder following the polishing recipe developed at Fermi Lab (FNAL) in 2011 \\cite{C. A. Cooper 2011}. Post CBP, the sample coupons were analyzed for surface roughness, crystal composition and structure, and particle contamination. Following the initial analysis each coupon was high pressure rinsed (HRP) and analyzed for the effectiveness of contamination removal. We were able to obtain the mirror like surface finish after the final stage of tumbling, although some defects and embedded particles remained. In addition, standard HPR appears to have little effect on removing embedded particles which remain after each tumbling step, although final polishing media removal was partially affected by standard/extended HPR.

  2. Photo-transport properties of Pb{sub 2}CrO{sub 5} single crystals

    SciTech Connect (OSTI)

    Mondal, P. S.; Okazaki, R. Taniguchi, H.; Terasaki, I.

    2014-11-21

    We report photo-thermoelectric transport phenomena in Pb{sub 2}CrO{sub 5} single crystals. Without illumination, this material exhibits an insulating behavior characterized by an activation-type temperature variation of the electrical conductivity. The Seebeck coefficient contrastingly shows a crossover from high-temperature insulating to low-temperature metallic behavior, which is attributed to degenerate carriers in a donor level. We have found that under illumination, both the conductivity and the Seebeck coefficient increase in magnitude with increasing photon flux density in the degenerate-conduction regime. This result is difficult to understand within a simple photo-doping effect, which usually leads to a decrease in the Seebeck coefficient under illumination. The observed phenomenon is discussed in terms of a two-carrier contribution to the transport properties.

  3. Nanosecond pump and probe observation of bimolecular exciton effects in rubrene single crystals

    SciTech Connect (OSTI)

    Ward, Kebra A.; Richman, Brittany R.; Biaggio, Ivan

    2015-06-01

    Transient grating pump and probe experiments are used to investigate excitonic processes on the nanosecond time scale in rubrene single crystals. We find that bimolecular interactions cause a photoinduced excited state density on the order of 0.5 × 10{sup 20 }cm{sup −3}—corresponding to an average distance of ∼3 nm between individual states—to decrease by a factor of 2 after 2 ns, following a typical power-law decay. We assign the observed power-law decays to high-density interactions between excited states. Because of the high efficiency singlet exciton fission observed in rubrene, these bimolecular interactions are likely those between triplet excitons or between coherent quantum superpositions of a singlet and a pair of triplet-excitons.

  4. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Rainer Wallny

    2012-10-15

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2010, and the LHC upgrades expected in 2015, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed and operational in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  5. Design and analysis of large-core single-mode windmill single crystal sapphire optical fiber

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cheng, Yujie; Hill, Cary; Liu, Bo; Yu, Zhihao; Xuan, Haifeng; Homa, Daniel; Wang, Anbo; Pickrell, Gary

    2016-06-01

    We present a large-core single-mode “windmill” single crystal sapphire optical fiber (SCSF) design, which exhibits single-mode operation by stripping off the higher-order modes (HOMs) while maintaining the fundamental mode. The “windmill” SCSF design was analyzed using the finite element analysis method, in which all the HOMs are leaky. The numerical simulation results show single-mode operation in the spectral range from 0.4 to 2 μm in the windmill SCSF, with an effective core diameter as large as 14 μm. Such fiber is expected to improve the performance of many of the current sapphire fiber optic sensor structures.

  6. Anisotropic shock sensitivity and detonation temperature of pentaerythritol tetranitrate single crystal

    SciTech Connect (OSTI)

    Yoo, C. S.; Holmes, N. C.; Souers, P. C.; Wu, C. J.; Ree, F. H.; Dick, J. J.

    2000-07-01

    Shock temperatures of pentaerythritol tetranitrate (PETN) single crystals have been measured by using a nanosecond time-resolved spectropyrometric system operated at six discrete wavelengths between 350 and 700 nm. The results show that the shock sensitivity of PETN is strongly dependent on the crystal orientation: Sensitive along the shock propagation normal to the (110) plane, but highly insensitive normal to the (100) plane. The detonation temperature of PETN is, however, independent from the crystal orientation and is determined to be 4140 ({+-}70) K. The time-resolved data yielding the detonation velocity 8.28 ({+-}0.10) mm/{mu}s can be interpreted in the context of a modified thermal explosion model. (c) 2000 American Institute of Physics.

  7. Effect of nitrogen on the growth of boron doped single crystal diamond

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Karna, Sunil; Vohra, Yogesh

    2013-11-18

    Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profilemore » of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.« less

  8. Optical properties of Eu{sup 2+} doped antipervoskite fluoride single crystals

    SciTech Connect (OSTI)

    Daniel, D. Joseph; Ramasamy, P.; Nithya, R.; Madhusoodanan, U.

    2013-02-05

    Single crystals of pure and Eu{sup 2+} doped LiBaF{sub 3} have been grown from melt by using a vertical Bridgman-Stockbarger method. Absorption and luminescence spectra for pure and rare-earth-doped LiBaF{sub 3} were studied. At ambient conditions the photoluminescence spectra consisted of sharp lines peaked at {approx}359 nm attributed to the {sup 6}P7/2{yields}{sup 8}S7/2 transitions in the 4f{sub 7} electronic configuration of Eu{sup 2+} and a broad band extending between 370 and 450 nm attributed to Eu{sup 2+} trapped exciton recombination. The effect of {sup 60}Co gamma irradiation has also been investigated.

  9. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Harris Kagan; K.K. Gan; Richard Kass

    2009-03-31

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2013, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  10. Summary Report of Summer Work: High Purity Single Crystal Growth & Microstructure of Ferritic-Martensitic Steels

    SciTech Connect (OSTI)

    Pestovich, Kimberly Shay

    2015-08-18

    Harnessing the power of the nuclear sciences for national security and to benefit others is one of Los Alamos National Laboratory’s missions. MST-8 focuses on manipulating and studying how the structure, processing, properties, and performance of materials interact at the atomic level under nuclear conditions. Within this group, single crystal scintillators contribute to the safety and reliability of weapons, provide global security safeguards, and build on scientific principles that carry over to medical fields for cancer detection. Improved cladding materials made of ferritic-martensitic alloys support the mission of DOE-NE’s Fuel Cycle Research and Development program to close the nuclear fuel cycle, aiming to solve nuclear waste management challenges and thereby increase the performance and safety of current and future reactors.

  11. Single shot ultrafast dynamic ellipsometry (UDE) of laser-driven shocks in single crystal explosives

    SciTech Connect (OSTI)

    Whitley, Von H; Mcgrane, Shawn D; Moore, David S; Eakins, Dan E; Bolme, Cindy A

    2009-01-01

    We report on the first experiments to measure states in shocked energetic single crystals with dynamic ellipsometry. We demonstrate that these ellipsometric techniques can produce reasonable Hugoniot values using small amounts of crystalline RDX and PETN. Pressures, particle velocities and shock velocities obtained using shocked ellipsometry are comparable to those found using gas-gun flyer plates and molecular dynamics calculations. The adaptation of the technique from uniform thin films of polymers to thick non-perfect crystalline materials was a significant achievement. Correct sample preparation proved to be a crucial component. Through trial and error, we were able to resolve polishing issues, sample quality problems, birefringence effects and mounting difficulties that were not encountered using thin polymer films.

  12. XRD micro-XANES EMPA and SIMS investigation on phlogopite single crystals from Mt. Vulture (Italy)

    SciTech Connect (OSTI)

    F Scordari; M Dyar; E Schingaro; M Lacalamita; L Ottolini

    2011-12-31

    Selected phlogopite flakes from Mt. Vulture in southern Italy were studied using a combination of single-crystal techniques: electron microprobe analysis (EMPA), secondary ion mass spectrometry (SIMS), single-crystal X-ray diffraction (SCXRD), and micro-X-ray absorption near-edge spectroscopy (XANES). The latter technique was employed to analyze the structure of the Fe-K absorption edge over the region from 7080-8100 eV and to determine Fe{sup 3+}/{Sigma}Fe at a micrometer scale, albeit with large error bars due to known effects of orientation on pre-edge energy. The annite component, Fe/(Mg+Fe), of the samples studied ranged from 0.16 to 0.31, the Ti content from 0.11 to 0.27 atoms per formula unit (apfu) and the Ba content from 0.03 to 0.09 apfu. SIMS analysis showed H{sub 2}O (wt%) = 1.81-3.30, F (wt%) = 0.44-1.29, and Li{sub 2}O (wt%) = 0.001-0.027. The intra single-crystal chemical variability for major/minor elements (Mg, Fe, Al, Ba, Ti, and K) was found particularly significant for samples VUT191{_}11 and PG5{_}1, less significant for the other samples of the set. SIMS data relative to crystals VUT187{_}24, VUT191{_}10, VUT191{_}11, and VUT187{_}28 showed a noteworthy variation in the concentrations of some light elements (H, Li, and F) with coefficient of variation CV (as 1{sigma}%) up to {approx}18% for H{sub 2}O. The analyzed micas belong to the 1M polytype. Structure refinements using anisotropic displacement parameters were performed in space group C2/m and converged at 3.08 {<=} R {<=} 3.63, 3.32 {<=} R{sub w} {<=} 3.98%. Micro-XANES results yielded Fe{sup 3+}/{Sigma}Fe from 51-93%. Previous Moessbauer data from powdered samples suggested Fe{sup 3+}/{Sigma}Fe values ranging from 49-87%. However, the Fe{sup 3+} content determined by both techniques is sometimes remarkably different, in part because of the large errors ({+-}10-15%) presently associated with the micro-XANES technique and in part because the Fe{sup 3+} content of a single crystal may

  13. Millimeter-Wave Dielectric Properties of Single Crystal Ferroelectric and Dielectric Materials

    SciTech Connect (OSTI)

    McCloy, John S.; Korolev, Konstantin A.; Li, Zijing; Afsar, Mohammed N.; Sundaram, S. K.

    2011-01-03

    Transmittance measurements on various single crystal ferroelectric materials over a broad millimeter-wave frequency range have been performed. Frequency dependence of the complex dielectric permittivity has been determined in the millimeter wave region for the first time. The measurements have been employed using a free-space quasi-optical millimeter-wave spectrometer equipped with a set of high power backward wave oscillators (BWOs) as sources of coherent radiation, tunable in the range from 30 - 120 GHz. The uncertainties and possible sources of instrumentation and measurement errors related to the free-space millimeter-wave technique are discussed. This work has demonstrated that precise MMW permittivities can be obtained even on small thin crystals using the BWO quasi-optical approach.

  14. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect (OSTI)

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  15. Defect Engineering in SrI2:Eu2+ Single Crystal Scintillators

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, Yuntao; Boatner, Lynn A.; Lindsey, Adam C.; Zhuravleva, Mariya; Jones, Steven; Auxier, John D.; Hall, Howard L.; Melcher, Charles L.

    2015-06-23

    Eu2+-activated strontium iodide is an excellent single crystal scintillator used for gamma-ray detection and significant effort is currently focused on the development of large-scale crystal growth techniques. A new approach of molten-salt pumping or so-called melt aging was recently applied to optimize the crystal quality and scintillation performance. Nevertheless, a detailed understanding of the underlying mechanism of this technique is still lacking. The main purpose of this paper is to conduct an in-depth study of the interplay between microstructure, trap centers and scintillation efficiency after melt aging treatment. Three SrI2:2 mol% Eu2+ single crystals with 16 mm diameter were grownmore » using the Bridgman method under identical growth conditions with the exception of the melt aging time (e.g. 0, 24 and 72 hours). Using energy-dispersive X-ray spectroscopy, it is found that the matrix composition of the finished crystal after melt aging treatment approaches the stoichiometric composition. The mechanism responsible for the formation of secondary phase inclusions in melt-aged SrI2:Eu2+ is discussed. Simultaneous improvement in light yield, energy resolution, scintillation decay-time and afterglow is achieved in melt-aged SrI2:Eu2+. The correlation between performance improvement and defect structure is addressed. The results of this paper lead to a better understanding of the effects of defect engineering in control and optimization of metal halide scintillators using the melt aging technique.« less

  16. A study of the structure and scattering mechanisms of subterahertz phonons in lithium fluoride single crystals and optical ceramics

    SciTech Connect (OSTI)

    Khazanov, E. N. Taranov, A. V.; Gainutdinov, R. V.; Akchurin, M. Sh.; Basiev, T. T.; Konyushkin, V. A.; Fedorov, P. P.; Kuznetsov, S. V.; Osiko, V. V.

    2010-06-15

    The methods of optical, electron, and atomic force microscopy (AFM) are applied to the study of the real structure of optical lithium fluoride ceramic obtained by hot deformation of single crystals. A comparative analysis is carried out of the scattering mechanisms of weakly nonequilibrium thermal phonons at liquid helium temperatures in LiF single crystals and ceramics. It is demonstrated that the phonon scattering in the original single crystals is determined by the forced vibrations of dislocations in the stress field of an elastic plane wave (a phonon), i.e., by the flutter mechanism. As the degree of deformation of the original material increases, the ceramics exhibit a change in the plastic deformation mechanisms, which leads to a decrease in the average size of grains and to an ordered structure. In this case, the dominant scattering is that by intergrain boundaries. The thickness and the acoustic impedance of these boundaries are evaluated.

  17. Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magnetic shape memory effect

    SciTech Connect (OSTI)

    Heczko, O. Drahokoupil, J.; Straka, L.

    2015-05-07

    Enhanced magnetic hysteresis due to boron doping in combination with magnetic shape memory effect in Ni-Mn-Ga single crystal results in new interesting functionality of magnetic shape memory (MSM) alloys such as mechanical demagnetization. In Ni{sub 50.0}Mn{sub 28.5}Ga{sub 21.5} single crystal, the boron doping increased magnetic coercivity from few Oe to 270?Oe while not affecting the transformation behavior and 10?M martensite structure. However, the magnetic field needed for MSM effect also increased in doped sample. The magnetic behavior is compared to undoped single crystal of similar composition. The evidence from the X-ray diffraction, magnetic domain structure, magnetization loops, and temperature evolution of the magnetic coercivity points out that the enhanced hysteresis is caused by stress-induced anisotropy.

  18. Transistors using crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    1995-01-01

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

  19. A tale of two mechanisms. Strain-softening versus strain-hardening in single crystals under small stressed volumes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bei, Hongbin; Xia, Yuzhi; Barabash, Rozaliya; Gao, Y. F.

    2015-08-10

    Pre-straining defect-free single crystals will introduce heterogeneous dislocation nucleation sources that reduce the measured strength from the theoretical value, while pre-straining bulk samples will lead to strain hardening. Their competition is investigated by nanoindentation pop-in tests on variously pre-strained Mo single crystals with several indenter radii (~micrometer). Pre-straining primarily shifts deformation mechanism from homogeneous dislocation nucleation to a stochastic behavior, while strain hardening plays a secondary role, as summarized in a master plot of pop-in strength versus normalized indenter radius.

  20. Development of large-area monolithically integrated silicon-film{trademark} photovoltaic modules. Final subcontract report, May 1, 1991--December 31, 1994

    SciTech Connect (OSTI)

    Hall, R.B.; Rand, J.A.; Cotter, J.E.

    1995-04-01

    The objective of this program is to develop Silicon Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (<100 {mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achieved by the use of light trapping and passivated surfaces. This project focused on the development of five key technologies associated with the monolithic sub-module device structure: (1) development of the film deposition and growth processes; (2) development of the low-cost ceramic substrate; (3) development of a metallurgical barrier technology; (4) development of sub-element solar cell processing techniques; and (5) development of sub-module (isolation and interconnection) processes. This report covers the development approaches and results relating to these technologies. Significant progress has been made in the development of all of the related technologies. This is evidenced by the fabrication of a working 12.0 cm{sup 2} prototype sub-module consisting of 7 elements and testing with an open circuit voltage of 3.9 volts, a short circuit current of 35.2 mA and a fill factor of 63% and an overall efficiency of 7.3%. Another significant result achieved is a 13.4% (NREL verified), 1.0 cm{sup 2} solar cell fabricated from material deposited and grown on a graphite cloth substrate. The significant technological hurdle of the program was and remains the low quality of the photovoltaic layer which is caused by contamination of the photovoltaic layer from the low-cost ceramic substrate by trace impurities found in the substrate precursor materials. The ceramic substrate and metallurgical barrier are being developed specifically to solve this problem.

  1. Color tuning of light-emitting-diodes by modulating the concentration of red-emitting silicon nanocrystal phosphors

    SciTech Connect (OSTI)

    Barillaro, G. Strambini, L. M.

    2014-03-03

    Luminescent forms of nanostructured silicon have received significant attention in the context of quantum-confined light-emitting devices thanks to size-tunable emission wavelength and high-intensity photoluminescence, as well as natural abundance, low cost, and non-toxicity. Here, we show that red-emitting silicon nanocrystal (SiN) phosphors, obtained by electrochemical erosion of silicon, allow for effectively tuning the color of commercial light-emitting-diodes (LEDs) from blue to violet, magenta, and red, by coating the LED with polydimethylsiloxane encapsulating different SiN concentrations. High reliability of the tuning process, with respect to SiN fabrication and concentration, and excellent stability of the tuning color, with respect to LED bias current, is demonstrated through simultaneous electrical/optical characterization of SiN-modified commercial LEDs, thus envisaging exciting perspectives for silicon nanocrystals in the field of light-emitting applications.

  2. Kelvin probe characterization of buried graphitic microchannels in single-crystal diamond

    SciTech Connect (OSTI)

    Bernardi, E. Battiato, A.; Olivero, P.; Vittone, E.; Picollo, F.

    2015-01-14

    In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of buried graphitic microchannels fabricated in single-crystal diamond by direct MeV ion microbeam writing. Metal deposition of variable-thickness masks was adopted to implant channels with emerging endpoints and high temperature annealing was performed in order to induce the graphitization of the highly-damaged buried region. When an electrical current was flowing through the biased buried channel, the structure was clearly evidenced by KPM maps of the electrical potential of the surface region overlying the channel at increasing distances from the grounded electrode. The KPM profiling shows regions of opposite contrast located at different distances from the endpoints of the channel. This effect is attributed to the different electrical conduction properties of the surface and of the buried graphitic layer. The model adopted to interpret these KPM maps and profiles proved to be suitable for the electronic characterization of buried conductive channels, providing a non-invasive method to measure the local resistivity with a micrometer resolution. The results demonstrate the potential of the technique as a powerful diagnostic tool to monitor the functionality of all-carbon graphite/diamond devices to be fabricated by MeV ion beam lithography.

  3. Oxidation of methanol on single crystal platinum electrodes in alkaline solution

    SciTech Connect (OSTI)

    Tripkovic, A.V.; Marinkovic, N.; Adzic, R.R.

    1995-10-01

    Methanol oxidation has been studied on three low-index single crystal Pt electrodes and four stepped surfaces, vicinal to the (111) and (100) orientations in alkaline solutions. Considering the onset of the reaction, it appears that the activity decreases in the sequence Pt(100), Pt(110) and Pt(111). This can also be inferred from the quasi-steady-state measurements. The current peaks, observed at different potentials, show the highest activity of Pt(111). The steps cause increase of the surface activity, but are prone to a fast poisoning. The reaction involves a formation of a small amount of CO on Pt(100) but a negligible amount on Pt(111). This was inferred from the in situ FTIR measurements. Two different reaction mechanisms were identified for the Pt(111) and Pt(100). The data clearly show that a large difference of the activity of Pt for methanol oxidation in acid and alkaline solutions originates in a smaller or negligible poisoning effects in alkaline solutions.

  4. Polarized Neutron Studies on Antiferromagnetic Single Crystals: Technical Report No. 4

    DOE R&D Accomplishments [OSTI]

    Nathans, R.; Riste, T.; Shirane, G.; Shull, C.G.

    1958-11-26

    The theory of neutron scattering by magnetic crystals as given by Halpern and Johnson predicts changes in the polarization state of the neutron beam upon scattering which depend upon the relative orientation of the neutron polarization vector and the crystal magnetic axis. This was investigated experimentally with a polarized beam spectrometer using single crystals of Cr{sub 2}O{sub 3} and alpha - Fe{sub 2}O{sub 3} in which reside unique antiferromagnetic axes. Studies were made on several different reflections in both crystals for a number of different temperatures both below and above the Neel point. Results support the theoretical predictions and indicate directions for the moments in these crystals consistent with previous work. A more detailed study of the polarization changes in the (111) reflection in alpha - Fe{sub 2}O{sub 3} at room temperature on application of a magnetic field was carried out, The results indicate that the principal source of the parasitic ferromagnetism in hematite is essentially independent of the orientation of the antiferromagnetic domains within the crystal.

  5. Strength statistics of single crystals and metallic glasses under small stressed volumes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gao, Yanfei; Bei, Hongbin

    2016-05-13

    It has been well documented that plastic deformation of crystalline and amorphous metals/alloys shows a general trend of “smaller is stronger”. The majority of the experimental and modeling studies along this line have been focused on finding and reasoning the scaling slope or exponent in the logarithmic plot of strength versus size. In contrast to this view, here we show that the universal picture should be the thermally activated nucleation mechanisms in small stressed volume, the stochastic behavior as to find the weakest links in intermediate sizes of the stressed volume, and the convolution of these two mechanisms with respectmore » to variables such as indenter radius in nanoindentation pop-in, crystallographic orientation, pre-strain level, sample length as in uniaxial tests, and others. Furthermore, experiments that cover the entire spectrum of length scales and a unified model that treats both thermal activation and spatial stochasticity have discovered new perspectives in understanding and correlating the strength statistics in a vast of observations in nanoindentation, micro-pillar compression, and fiber/whisker tension tests of single crystals and metallic glasses.« less

  6. Evaluation of scuffing behavior of single-crystal zirconia ceramic materials.

    SciTech Connect (OSTI)

    Lorenzo-Martin, C.; Ajayi, O. O.; Singh, D.; Routbort, J. L.; Energy Systems

    2007-09-10

    Scuffing, described as sudden catastrophic failure of lubricated sliding surfaces, is usually characterized by a sudden rapid increase in friction, temperature, and noise, and is an important failure mode on sliding surfaces. In metallic materials, scuffing results in severe plastic deformation of surfaces in contact. This study evaluated the scuffing behavior of two variants of zirconia (ZrO{sub 2}) ceramic. Using a block-on-ring contact configuration and unformulated polyalphaolefin (PAO) lubricant, step-load-increase scuffing tests were conducted with single crystals of cubic ZrO{sub 2}-9.5% Y{sub 2}O{sub 3} and tetragonal ZrO{sub 2}-3% Y{sub 2}O{sub 3}. Phenomenological 'scuffing', characterized by a sudden rise in friction coefficient and noise, was observed in the cubic material. For this material, 'scuffing' occurred by sudden fracture at the end of test. The tetragonal material underwent no sudden failure (scuffing). This lack of scuffing is attributed to the sequential operation of three plastic deformation mechanisms: ferroelastic domain switching, tetragonal-to-monoclinic phase transformation, and dislocation slip as the frictional stress and energy dissipation pathway.

  7. Atomistic simulations of nanowelding of single-crystal and amorphous gold nanowires

    SciTech Connect (OSTI)

    Wu, Cheng-Da; Fang, Te-Hua Wu, Chung-Chin

    2015-01-07

    The mechanism and quality of the welding of single-crystal (SC) and amorphous gold nanowires (NWs) with head-to-head contact are studied using molecular dynamics simulations based on the second-moment approximation of the many-body tight-binding potential. The results are discussed in terms of atomic trajectories, slip vectors, stress, and radial distribution function. Simulation results show that the alignment for the amorphous NWs during welding is easier than that for the SC NWs due to the former's relatively stable geometry. A few dislocations nucleate and propagate on the (111) close-packed plane (slip plane) inside the SC NWs during the welding and stretching processes. During welding, an incomplete jointing area first forms through the interactions of the van der Waals attractive force, and the jointing area increases with increasing extent of contact between the two NWs. A crystallization transition region forms in the jointing area for the welding of SC-amorphous or amorphous-SC NWs. With increasing interference, an amorphous gold NW shortens more than does a SC gold NW due to the former's relatively poor strength. The pressure required for welding decreases with increasing temperature.

  8. Elastic-plastic and phase transition of zinc oxide single crystal under shock compression

    SciTech Connect (OSTI)

    Liu, Xun; Mashimo, Tsutomu Li, Wei; Zhou, Xianming; Sekine, Toshimori

    2015-03-07

    The Hugoniot data for zinc oxide (ZnO) single crystals were measured up to 80 GPa along both the 〈112{sup ¯}0〉 (a-axis) and 〈0001〉 (c-axis) directions using a velocity interferometer system for any reflector and inclined-mirror method combined with a powder gun and two-stage light gas gun. The Hugoniot-elastic limits of ZnO were determined to be 10.5 and 11.5 GPa along the a- and c-axes, respectively. The wurtzite (B4) to rocksalt (B1) phase transition pressures along the a- and c-axes are 12.3 and 14.4 GPa, respectively. Shock velocity (U{sub s}) versus particle velocity (U{sub p}) relation of the final phase is given by the following relationship: U{sub s} (km/s) = 2.76 + 1.51U{sub p} (km/s). Based on the Debye-Grüneisen model and Birch-Murnaghan equation of state (EOS), we discuss the EOS of the B1 phase ZnO. The bulk modulus (K{sub 0}) and its pressure derivative (K{sub 0}′) are estimated to be K{sub 0} = 174 GPa and K{sub 0}′ = 3.9, respectively.

  9. Superconductivity and Physical Properties of CaPd2Ge2 Single Crystals

    SciTech Connect (OSTI)

    Anand, V K; Kim, Hyunsoo; Tanatar, Makariy A; Prozorov, Ruslan; Johnston, David C

    2014-10-08

    We present the superconducting and normal state properties of CaPd2Ge2 single crystals investigated by magnetic susceptibility ?, isothermal magnetization M, heat capacity Cp, in-plane electrical resistivity ? and London penetration depth ? versus temperature T and magnetic field H measurements. Bulk superconductivity is inferred from the ?(T) and Cp(T) data. The ?(T) data exhibit metallic behavior and a superconducting transition with Tc onset = 1.98 K and zero resistivity at Tc 0 = 1.67 K. The ?(T) reveals the onset of superconductivity at 2.0 K. For T > 2.0 K, the ?(T) and M(H) are weakly anisotropic paramagnetic with ?ab > ?c. The Cp(T) data confirm the bulk superconductivity below Tc = 1.69(3) K. The superconducting state electronic heat capacity is analyzed within the framework of a single-band ?-model of BCS superconductivity and various normal and superconducting state parameters are estimated. Within the ?-model, the Cp(T) data and the ab plane ?(T) data consistently indicate a moderately anisotropic s-wave gap with ?(0)/kBTc ? 1.6, somewhat smaller than the BCS value of 1.764. The relationship of the heat capacity jump at Tc and the penetration depth measurement to the anisotropy in the s-wave gap is discussed.

  10. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Kagan, Harris; Kass, Richard; Gan, K.K.

    2014-01-23

    With the LHC upgrades in 2013, and further LHC upgrades scheduled in 2018, most LHC experiments are planning for detector upgrades which require more radiation hard technologies than presently available. At present all LHC experiments now have some form of diamond detector. As a result Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of all LHC experiments. Moreover CVD diamond is now being discussed as an alternative sensor material for tracking very close to the interaction region of the HL-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications. Our accomplishments include: Developed a two U.S.companies to produce electronic grade diamond, Worked with companies and acquired large area diamond pieces, Performed radiation hardness tests using various proton energies: 70 MeV (Cyric, Japan), 800 MeV (Los Alamos), and 24 GeV (CERN).

  11. Effect of dislocation trapping on deuterium diffusion in deformed, single-crystal Pd

    SciTech Connect (OSTI)

    Heuser, B.J.; King, J.S.

    1998-06-01

    Small-angle neutron scattering (SANS) has been used to characterize deuterium trapping at dislocations in deformed, single-crystal Pd during in situ gas evolution experiments. Two methods of deformation were employed--cold rolling and hydride cycling--which create different dislocation arrangements or substructures in Pd. The reduction of the trapped deuterium concentration at dislocations during evolution was directly monitored with SANS. Exponential decay rates of the trapped concentration were observed for both sample types, as is expected in a bulk diffusion process modified by the dislocation trapping interaction. The deuterium concentration reduction proceeded 1.2 to 1.4 times faster in the cold-rolled sample material than in the cycled material. This is attributed to the presence of a smaller number of dislocation trapping sites in the cold-rolled material. The binding energy of deuterium at dislocations was determined by applying a diffusion-based model. A binding energy of 0.20 eV was found to characterize the trapping interaction in both cold-rolled and hydride-cycled Pd.

  12. Elastic properties of Pd-hydrogen, Pd-deuterium, and Pd-tritium single crystals

    SciTech Connect (OSTI)

    Schwarz, R.B. . E-mail: rxzs@lanl.gov; Bach, H.T.; Harms, U.; Tuggle, D.

    2005-02-01

    We used a resonant-ultrasound-spectroscopy technique to measure the three independent elastic constants of PdH{sub x}, PdD{sub x}, and PdT{sub x} single crystals at 300 K. For 0.1x0.62 our PdH{sub x} crystals are two-phase mixtures of coherent {alpha} and {beta} hydride phases. For increasing x in this range, C{sub 44} decreases monotonically whereas C'=12(C11-C12) has a concave parabolic dependence. This difference is because C' is softened by an anelastic relaxation resulting from acoustic-stress-induced changes in the shape of the coherent lenticular-shape precipitates ({beta}-hydride precipitates in {alpha}-hydride matrix and {alpha}-hydride precipitates in {beta}-hydride matrix). In the {beta}-phase C' and C{sub 44} decrease with increasing hydrogen (or deuterium or tritium) content. Furthermore, C' exhibits a strong isotope effect whereas C{sub 44} does not. This effect is attributed to differences in the excitation of optical phonons in Pd-H, Pd-D and Pd-T.

  13. Welding and weldability of directionally solidified single crystal nickel-base super-alloys

    SciTech Connect (OSTI)

    vitek, j.m.

    1996-09-01

    The objective of this CRADA project was to investigate the weldability of polycrystalline, directionally-solidified, and single-crystal, nickel-base super-alloys. These materials are used extensively in turbine engine components. The ability to weld these materials is highly desirable in that it would greatly facilitate component fabrication. Welding of these materials would also have the potential benefit of allowing for the repair of cracked or worn components. Specifically, the program had four objectives: (1) to evaluate the weldability of nickel-base super-alloys; (2) to characterize the solidification microstructure of the welds; (3) to evaluate the phase stability of the weldments during exposure to service conditions; and (4) to determine the mechanical properties of the welds. Westinghouse Electric Corporation was to supply material for the program, in both as-case and heat-treated form. This was to include commercially available as well as experimental alloys developed at Westinghouse. ORNL was to perform weldability tests on the materials using a variety of welding procedures.

  14. Creep of CMSX-4 superalloy single crystals: Effects of rafting at high temperature

    SciTech Connect (OSTI)

    Reed, R.C.; Matan, N.; Cox, D.C.; Rist, M.A.; Rae, C.M.F.

    1999-09-29

    The creep performance of (001)-orientated CMSX-4 superalloy single crystals at temperatures beyond 1000 C is analyzed. Rafting of the {gamma}{prime} structure occurs rapidly, e.g., for the 1150 C/100 MPa tests rafting is completed within the first 10 h. At this stage and for a considerable time thereafter the creep strain rate decreases with increasing strain, implying a creep hardening effect which is absent at lower temperatures when the kinetics of rafting is less rapid. Once a critical strain {epsilon}* of (0.7 {+-} 0.3)% is reached, the creep strain increases dramatically and failure occurs within a few tens of hours. It is demonstrated that methods of interpretation which, assume a proportionality between the creep strain rate and creep strain, are unable to account for creep hardening which occurs as a consequence of rafting. A modification is proposed which accounts for the blocking of the glide/climb of {l{underscore}brace}111{r{underscore}brace}{l{underscore}angle}1{bar 1}0{r{underscore}angle} creep dislocations which occurs as the number of vertical {gamma} channels is reduced and cellular dislocation networks become stabilized. Consequently, failure must be taken to be associated with creep cavitation, which occurs predominantly around casting porosity. It is emphasized that more work is required to quantify the interaction between the various creep damage mechanisms.

  15. High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, Lynn A.; Watkins, S. P.

    2016-03-18

    Here, Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-dopants. We present high-resolution photoluminescence spectroscopy studies of unintentionally doped and Sn doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I10 bound exciton transition which was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. PL linewidths are exceptionally sharp for these samples, enabling clear identification of several donor species. Temperature dependent PL measurements of the I10 line emission energy and intensity dependence reveal a behavior similar tomore » other shallow donors in ZnO. Ionized donor bound exciton and two electron satellite transitions of the I10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule), confirming the shallow nature of this defect center, which we attribute to a SnZn double donor compensated by an unknown single acceptor.« less

  16. Anisotropic small-polaron hopping in W:BiVO{sub 4} single crystals

    SciTech Connect (OSTI)

    Rettie, Alexander J. E.; Chemelewski, William D.; Zhou, Jianshi; Lindemuth, Jeffrey; McCloy, John S.; Marshall, Luke G.; Emin, David; Mullins, C. Buddie

    2015-01-12

    DC electrical conductivity, Seebeck and Hall coefficients are measured between 300 and 450 K on single crystals of monoclinic bismuth vanadate that are doped n-type with 0.3% tungsten donors (W:BiVO{sub 4}). Strongly activated small-polaron hopping is implied by the activation energies of the Arrhenius conductivities (about 300 meV) greatly exceeding the energies characterizing the falls of the Seebeck coefficients' magnitudes with increasing temperature (about 50 meV). Small-polaron hopping is further evidenced by the measured Hall mobility in the ab-plane (10{sup −1 }cm{sup 2 }V{sup −1 }s{sup −1} at 300 K) being larger and much less strongly activated than the deduced drift mobility (about 5 × 10{sup −5 }cm{sup 2 }V{sup −1 }s{sup −1} at 300 K). The conductivity and n-type Seebeck coefficient is found to be anisotropic with the conductivity larger and the Seebeck coefficient's magnitude smaller and less temperature dependent for motion within the ab-plane than that in the c-direction. These anisotropies are addressed by considering highly anisotropic next-nearest-neighbor (≈5 Å) transfers in addition to the somewhat shorter (≈4 Å), nearly isotropic nearest-neighbor transfers.

  17. Terahertz probes of magnetic field induced spin reorientation in YFeO{sub 3} single crystal

    SciTech Connect (OSTI)

    Lin, Xian; Jiang, Junjie; Ma, Guohong; Jin, Zuanming; Wang, Dongyang; Tian, Zhen; Han, Jiaguang; Cheng, Zhenxiang

    2015-03-02

    Using the terahertz time-domain spectroscopy, we demonstrate the spin reorientation of a canted antiferromagnetic YFeO{sub 3} single crystal, by evaluating the temperature and magnetic field dependence of resonant frequency and amplitude for the quasi-ferromagnetic (FM) and quasi-antiferromagnetic modes (AFM), a deeper insight into the dynamics of spin reorientation in rare-earth orthoferrites is established. Due to the absence of 4f-electrons in Y ion, the spin reorientation of Fe sublattices can only be induced by the applied magnetic field, rather than temperature. In agreement with the theoretical predication, the frequency of FM mode decreases with magnetic field. In addition, an obvious step of spin reorientation phase transition occurs with a relatively large applied magnetic field of 4 T. By comparison with the family members of RFeO{sub 3} (R = Y{sup 3+} or rare-earth ions), our results suggest that the chosen of R would tailor the dynamical rotation properties of Fe ions, leading to the designable spin switching in the orthoferrite antiferromagnetic systems.

  18. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  19. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    SciTech Connect (OSTI)

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of

  20. One-dimensional SANS employing bent-single crystal optics: Theory and demonstration

    SciTech Connect (OSTI)

    Heuser, B.J.; Popovici, M.; Berliner, R.

    1995-12-31

    A recent small-angle neutron scattering (SANS) instrumentation development at the University of Missouri Research Reactor Center (MURR) using bent, double Si crystal diffraction is presented. Neutron rocking curves of flat single crystals are only a few seconds of arc with correspondingly low integrated intensities. The rocking curve can be significantly broadened if the crystals are bent. However, the phase-space acceptance and emergence windows of two bent crystals in parallel can be matched only if the reflecting planes have different d-spacing. The authors have used a combination of the Si(111) and (220) reflections in the work presented here. The peak intensity of the rocking curve with this configuration was approximately 2.5 {times} 10{sup 5} neutrons per second over a 5 cm{sup 2} area of sample at 1.5 {angstrom}. The rocking curve wings fell sharply (approximately as Q{sup {minus}11}), permitting accurate scattered intensity measurements down to a minimum Q value of 0.005 1/{angstrom} at a Q resolution of 0.003 1/{angstrom}. The technique also offers the possibility of variable resolution without too much difficulty; changes up to a factor of 2 can be made by adjusting the sample-to-analyzer crystal distance, while changes of a factor of 10 can be made by using different Si reflections. Since the incident neutron wavelength can be tuned to the peak of the leakage spectrum, this technique is ideal for low-flux reactors, which otherwise cannot be used for SANS research. The usefulness of one-dimensional SANS is demonstrated by measurements of Portland cement.

  1. Growth of single-crystal {alpha}-MnO{sub 2} nanorods on multi-walled carbon nanotubes

    SciTech Connect (OSTI)

    Chen Yong; Liu Chenguang; Liu Chang; Lu Gaoqing; Cheng Huiming

    2007-11-06

    Single-crystal {alpha}-MnO{sub 2} nanorods were grown on multi-walled carbon nanotubes (MWNTs) in H{sub 2}SO{sub 4} aqueous solution. The morphology and microstructure of the composites were examined by transmission electron microscopy, high-resolution transmission electron microscopy (HRTEM), X-ray diffractometry and energy dispersive spectroscopy (EDS). The results show that {alpha}-MnO{sub 2} single-crystal nanorods with a mean diameter of 15 nm were densely grown on the surface of MWNTs. Those MWNTs/MnO{sub 2} composites were used as an electrode material for supercapacitors, and it was found that the supercapacitor performance using MWNTs/MnO{sub 2} composites was improved largely compared to that using pure MWNTs and {alpha}-MnO{sub 2} nanorod mechanically mixed with MWNTs.

  2. Optimization of Weld Conditions and Alloy Composition for Welding of Single-Crystal Nickel-Based Superalloys

    SciTech Connect (OSTI)

    Vitek, John Michael; David, Stan A; Babu, Sudarsanam S

    2007-01-01

    Calculations were carried out to identify optimum welding conditions and weld alloy compositions to avoid stray grain formation during welding of single-crystal nickel-based superalloys. The calculations were performed using a combination of three models: a thermal model to describe the weld pool shape and the local thermal gradient and solidification front velocity; a geometric model to identify the local active dendrite growth variant, and a nucleation and growth model to describe the extent of stray grain formation ahead of the advancing solidification front. Optimum welding conditions (low weld power, high weld speed) were identified from the model calculations. Additional calculations were made to determine potential alloy modifications that reduce the solidification temperature range while maintaining high gamma prime content. The combination of optimum weld conditions and alloy compositions should allow for weld repair of single-crystal nickel-based superalloys without sacrificing properties or performance.

  3. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

    SciTech Connect (OSTI)

    Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A.; Grazianetti, C.; Fanciulli, M.; Dipartimento di Scienza dei Materiali, Universit degli Studi di Milano Bicocca, I-20126, Milano ; Chiappe, D.; Molle, A.

    2013-12-16

    Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

  4. The crystal structure of {pi}-ErBO{sub 3}: New single-crystal data for an old problem

    SciTech Connect (OSTI)

    Pitscheider, Almut [Institut fuer Allgemeine, Anorganische und Theoretische Chemie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria); Kaindl, Reinhard [Institut fuer Mineralogie und Petrographie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52, A-6020 Innsbruck (Austria); Oeckler, Oliver [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen, Butenandtstrasse 5-13, D-81377 Muenchen (Germany); Huppertz, Hubert, E-mail: Hubert.Huppertz@uibk.ac.a [Institut fuer Allgemeine, Anorganische und Theoretische Chemie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria)

    2011-01-15

    Single crystals of the orthoborate {pi}-ErBO{sub 3} were synthesized from Er{sub 2}O{sub 3} and B{sub 2}O{sub 3} under high-pressure/high-temperature conditions of 2 GPa and 800 {sup o}C in a Walker-type multianvil apparatus. The crystal structure was determined on the basis of single-crystal X-ray diffraction data, collected at room temperature. The title compound crystallizes in the monoclinic pseudowollastonite-type structure, space group C2/c, with the lattice parameters a=1128.4(2) pm, b=652.6(2) pm, c=954.0(2) pm, and {beta}=112.8(1){sup o} (R{sub 1}=0.0124 and wR{sub 2}=0.0404 for all data). -- graphical abstract: The first satisfying single-crystal structure determination of {pi}-ErBO{sub 3} sheds light on the extensively discussed structure of {pi}-orthoborates. The application of light pressure during the solid state synthesis yielded in high-quality crystals, due to pressure-induced crystallization. Research highlights: {yields} High-quality single crystals of {pi}-ErBO{sub 3} were prepared via high-pressure-induced crystallization. {yields} At least five different space groups for the rare-earth {pi}-orthoborates are reported. {yields} {pi}-ErBO{sub 3} is isotypic to the pseudowollastonite-type CaSiO{sub 3}. {yields} Remaining ambiguities regarding the structure of the rare-earth {pi}-orthoborates are resolved.

  5. Thermal-mechanical stability of single crystal oxide refractive concentrators for high-temperature solar thermal propulsion

    SciTech Connect (OSTI)

    Zhu, D.; Jacobson, S.; Miller, R.A.

    1999-07-01

    Single crystal oxides such as yttria-stabilized zirconia (Y{sub 2}O{sub 3}-ZrO{sub 2}), yttrium aluminum garnet (Y{sub 3}Al{sub 5}O{sub 12}, or YAG), magnesium oxide (MgO) and sapphire (Al{sub 2}O{sub 3}) are candidate refractive secondary concentrator materials for high temperature solar propulsion applications. However, thermo-mechanical reliability of these components in severe thermal environments during the space mission sun/shade transition is of great concern. Simulated mission tests are important for evaluating these candidate oxide materials under a variety of transient and steady-state heat flux conditions, and thus provide vital information for the component design. In this paper, a controlled heat flux thermal shock test approach is established for the single crystal oxide materials using a 3.0 kW continuous wave CO{sub 2} laser, with a wavelength 10.6 micron. Thermal fracture behavior and failure mechanisms of these oxide materials are investigated and critical temperature gradients are determined under various temperature and heating conditions. The test results show that single crystal sapphire is able to sustain the highest temperature gradient and heating-cooling rate, and thus exhibit the best thermal shock resistance, as compared to the yttria-stabilized zirconia, yttrium aluminum garnet and magnesium oxide.

  6. Method of bonding single crystal quartz by field-assisted bonding

    DOE Patents [OSTI]

    Curlee, Richard M.; Tuthill, Clinton D.; Watkins, Randall D.

    1991-01-01

    The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals.

  7. Method of bonding single crystal quartz by field-assisted bonding

    DOE Patents [OSTI]

    Curlee, R.M.; Tuthill, C.D.; Watkins, R.D.

    1991-04-23

    The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals. 2 figures.

  8. TH-C-19A-06: Measurements with a New Commercial Synthetic Single Crystal Diamond Detector

    SciTech Connect (OSTI)

    Laub, W; Crilly, R

    2014-06-15

    Purpose: A commercial version of a synthetic single crystal diamond detector in a Scottky diode configuration was recently released as the new type 60019 microDiamond detector (PTW-Freiburg). In this study we investigate the dosimetric properties of this detector and explore if the use of the microDiamond detector can be expanded to high energy photon beams of up to 15MV and to large field measurements. Methods: Energy dependency was investigated. Photon and electron depth-dose curves were measured. Photon PDDs were measured with the Semiflex type 31010, microLion type 31018, P-Diode type 60016, SRS Diode type 60018, and the microDiamond type 60019 detector. Electron depth-dose curves were measured with a Markus chamber type 23343, an E Diode type 60017 and the microDiamond type 60019 detector (all PTW-Freiburg). Profiles were measured with the E-Diode and microDiamond at dose maximum depths. Results: The microDiamond detector shows no energy dependence in high energy photon or electron dosimetry. Electron PDD measurements with the E-Diode and microDiamond are in good agreement except for the bremsstrahlungs region, where values are about 0.5 % lower with the microDiamond detector. Markus detector measurements agree with E-Diode measurements in this region. For depths larger than dmax, depth-dose curves of photon beams measured with the microDiamond detector are in close agreement to those measured with the microLion detector for small fields and with those measured with a Semiflex 0.125cc ionization chamber for large fields. For profile measurements, microDiamond detector measurements agree well with microLion and P-Diode measurements in the high-dose region and the penumbra region. For areas outside the open field, P-Diode measurements are about 0.5–1.0% higher than microDiamond and microLion measurements. Conclusion: The investigated diamond detector is suitable for a wide range of applications in high energy photon and electron dosimetry and is interesting

  9. Intercalation of organic molecules into SnS{sub 2} single crystals

    SciTech Connect (OSTI)

    Toh, M.L.; Tan, K.J.; Wei, F.X.; Zhang, K.K.; Jiang, H.; Kloc, C.

    2013-02-15

    SnS{sub 2} is a layered semiconductor with a van der Waals gap separating the covalently bonded layers. In this study, post-synthesis intercalation of donor organic amine molecules, such as ethylenediamine (en), into tin disulfide and secondary intercalation of p-phenylenediamine (PPD) and 1, 5-naphthalenediamine (NDA) into SnS{sub 2e}n have been verified with X-ray diffraction. PPD and NDA did not intercalate directly even during prolonged annealing but replaced en readily if en was already present in the van der Waals gap. The c-lattice dilation is proportional to the intercalant size. Unit cell lattices of intercalated products were determined from the positions of the X-ray diffraction peaks. Optical images taken during the intercalation showed that intercalation progressed from the periphery towards the interior of the crystal. TEM diffraction patterns in the [0 0 1] direction of SnS{sub 2} after intercalation revealed defects and stacking mismatches among the SnS{sub 2} layers caused by the intercalation. UV-Vis absorption studies showed a red shift in the band edge of the SnS{sub 2} material after intercalation. The band edge was 2.2 eV for pristine SnS{sub 2}; after intercalation with en or PPD, the absorbance spectra band edges shifted to approximately 0.7 eV or 0.5 eV, respectively. - Graphical Abstract: SnS{sub 2} single crystals were intercalated with organic amine molecules such as ethylenediamine, phenylenediamine and naphthalenediamine. Absorption studies showed red shift of band edge after intercalation, which was consistent with optical observations. X-ray diffraction indicated lattice dilation in the c-lattice of SnS{sub 2} after intercalation. Highlights: Black-Right-Pointing-Pointer Organic molecules intercalated inhomogenously between covalently bonded SnS{sub 2} layers. Black-Right-Pointing-Pointer Ethylenediamine (en) intercalate directly into SnS{sub 2}. Black-Right-Pointing-Pointer Phenylenediamine (PPD) and naphthalenediamine (NDA) can be

  10. Crystallographic, electronic, thermal, and magnetic properties of single-crystal SrCo2As2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pandey, Abhishek; Quirinale, D. G.; Jayasekara, W.; Sapkota, A.; Kim, M. G.; Dhaka, R. S.; Lee, Y.; Heitmann, T. W.; Stephens, P. W.; Ogloblichev, V.; et al

    2013-07-01

    In tetragonal SrCo2As2 single crystals, inelastic neutron scattering measurements demonstrated that strong stripe-type antiferromagnetic (AFM) correlations occur at a temperature T = 5 K [W. Jayasekara et al., arXiv:1306.5174] that are the same as in the isostructural AFe2As2 (A = Ca, Sr, Ba) parent compounds of high-Tc superconductors. This surprising discovery suggests that SrCo2As2 may also be a good parent compound for high-Tc superconductivity. Here, structural and thermal expansion, electrical resistivity ρ, angle-resolved photoemission spectroscopy (ARPES), heat capacity Cp, magnetic susceptibility χ, 75As NMR and neutron diffraction measurements of SrCo2As2 crystals are reported together with LDA band structure calculations thatmore » shed further light on this fascinating material. The c-axis thermal expansion coefficient αc is negative from 7 to 300 K, whereas αa is positive over this T range. The ρ(T) shows metallic character. The ARPES measurements and band theory confirm the metallic character and in addition show the presence of a flat band near the Fermi energy EF. The band calculations exhibit an extremely sharp peak in the density of states D(EF) arising from a flat dx2-y2 band. A comparison of the Sommerfeld coefficient of the electronic specific heat with χ(T → 0) suggests the presence of strong ferromagnetic itinerant spin correlations which on the basis of the Stoner criterion predicts that SrCo2As2 should be an itinerant ferromagnet, in conflict with the magnetization data. The χ(T) does have a large magnitude, but also exhibits a broad maximum at 115 K suggestive of dynamic short-range AFM spin correlations, in agreement with the neutron scattering data. The measurements show no evidence for any type of phase transition between 1.3 and 300 K and we propose that metallic SrCo2As2 has a gapless quantum spin-liquid ground state.« less