National Library of Energy BETA

Sample records for modules single-crystal silicon

  1. Solar cell structure incorporating a novel single crystal silicon material

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  2. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect (OSTI)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  3. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    SciTech Connect (OSTI)

    Ravi, T. S.

    2013-05-01

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  4. Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates

    E-Print Network [OSTI]

    Rogers, John A.

    Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic February 2005; published online 23 March 2005 Free-standing micro/nanoelements of single-crystal silicon-temperature device substrates, such as plastic, for high-performance mechanically flexible thin-film transistors TFTs

  5. A Constitutive Model for the Mechanical Behavior of Single Crystal Silicon at Elevated Temperature

    E-Print Network [OSTI]

    Moon, H.-S.

    Silicon in single crystal form has been the material of choice for the first demonstration of the MIT microengine project. However, because it has a relatively low melting temperature, silicon is not an ideal material for ...

  6. Single crystal silicon as a macro-world structural material : application to compact, lightweight high pressure vessels

    E-Print Network [OSTI]

    Garza, Tanya Cruz

    2011-01-01

    Single crystal silicon has promising inherent structural properties which are attractive for weight sensitive applications. Single crystal silicon, however, is a brittle material which makes the usable strength that can ...

  7. A variable capacitor made from single crystal silicon fracture surface pairs

    E-Print Network [OSTI]

    Sprunt, Alexander D. (Alexander Dalziel), 1977-

    2005-01-01

    Complementary and nano-smooth single-crystal-silicon surfaces have been fabricated by deliberately fracturing a weakened portion of a larger structure whose flexural mechanism refines and concentrates an externally applied ...

  8. Bendable single crystal silicon thin film transistors formed by printing on plastic substrates

    E-Print Network [OSTI]

    Rogers, John A.

    Bendable single crystal silicon thin film transistors formed by printing on plastic substrates E on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet

  9. Large-Area Free-Standing Ultrathin Single-Crystal Silicon as Processable Materials

    E-Print Network [OSTI]

    Cui, Yi

    Large-Area Free-Standing Ultrathin Single-Crystal Silicon as Processable Materials Shuang Wang in electronics, biotechnology, and energy applications. Here we demonstrate large-area free- standing ultrathin of surface together with the interesting property of these free-standing ultrathin Si materials opens up

  10. Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

    SciTech Connect (OSTI)

    Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schröder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk; Lu, M.; Stein, A.; Ruggiero, C. A.; Salzman, J.; Kalish, R.

    2014-11-24

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q?=?2.51?×?10{sup 6}) photonic crystal cavities with low mode volume (V{sub m}?=?1.062?×?(?/n){sup 3}), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05?dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q?=?3?×?10{sup 3}.

  11. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 14, NO. 4, AUGUST 2005 707 A Single-Crystal Silicon Symmetrical and Decoupled

    E-Print Network [OSTI]

    Akin, Tayfun

    ) gyroscope implemented using the dissolved wafer microelectromechanical systems (MEMS) process MICROELECTROMECHANICAL systems (MEMS) gyroscopes have attracted a lot of attention in the past decade for applicationsJOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 14, NO. 4, AUGUST 2005 707 A Single-Crystal Silicon

  12. Advanced silicon photonic modulators

    E-Print Network [OSTI]

    Sorace, Cheryl M

    2010-01-01

    Various electrical and optical schemes used in Mach-Zehnder (MZ) silicon plasma dispersion effect modulators are explored. A rib waveguide reverse biased silicon diode modulator is designed, tested and found to operate at ...

  13. Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells

    SciTech Connect (OSTI)

    Kopach, V. R.; Kirichenko, M. V. Khrypunov, G. S.; Zaitsev, R. V.

    2010-06-15

    It is shown that an increase in the efficiency and manufacturability of single-junction single-crystal silicon photoelectric converters of solar energy requires the use of a back-surface reflector based on conductive transparent indium-tin oxide (ITO) 0.25-2 {mu}m thick. To increase the efficiency and reduce the sensitivity to the angle of light incidence on the photoreceiving surface of multijunction photoelectric converters with vertical diode cells based on single-crystal silicon, ITO/Al reflectors with an ITO layer >1 {mu}m thick along vertical boundaries of diode cells should be fabricated. The experimental study of multijunction photoelectric converters with ITO/Al reflectors at diode cell boundaries shows the necessity of modernizing the used technology of ITO layers to achieve their theoretically calculated thickness.

  14. Multi-paradigm modeling of mode I&II dynamic fracture mechanisms in single crystal silicon

    E-Print Network [OSTI]

    Cohen, Alan, S. B. Massachusetts Institute of Technology

    2008-01-01

    In addition to its semi-conducting properties, silicon has the ability to be manipulated with high precision at very small length- scales. This property makes it very useful in the design of Nano/Micro-Electromechanical ...

  15. An ultralow power athermal silicon modulator

    E-Print Network [OSTI]

    Timurdogan, Erman

    Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength–division–multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters ...

  16. Photon tunnelling microscopy of polyethylene single crystals

    E-Print Network [OSTI]

    Srinivasarao, Mohan

    Photon tunnelling microscopy of polyethylene single crystals Mohan Srinivasarao* and Richard S:photon tunnellingmicroscopy;single crystals; polyethylene) INTRODUCTION The study of morphology of polymers is an area

  17. Nanoscale Calorimetry of Isolated Polyethylene Single Crystals

    E-Print Network [OSTI]

    Allen, Leslie H.

    Nanoscale Calorimetry of Isolated Polyethylene Single Crystals A. T. KWAN, M. YU. EFREMOV, E. A-film differential scanning calorimetry to investigate the melt- ing of isolated polyethylene single crystals of lamellar single crystals of polyethylene (PE). We obtain thickness, diffraction, and calorimetry data

  18. VOLUME 82, NUMBER 19 P H Y S I C A L R E V I E W L E T T E R S 10 MAY 1999 Dynamic Fracture in Single Crystal Silicon

    E-Print Network [OSTI]

    Texas at Austin. University of

    VOLUME 82, NUMBER 19 P H Y S I C A L R E V I E W L E T T E R S 10 MAY 1999 Dynamic Fracture on fracture in single crystals are limited due to the difficulties in performing precisely controlled experi- ments. There is also a lack of atomic scale simulations that allow quantitative comparison with fracture

  19. Banding in single crystals during plastic deformation

    E-Print Network [OSTI]

    Mahesh, Sivasambu

    Banding in single crystals during plastic deformation M. Arul Kumar a Sivasambu Mahesh a,b a. India. Abstract A rigid-plastic rate-independent crystal plasticity model capable of capturing band- ing such as dense dislocation walls. Key words: crystal plasticity, single crystal, macroscopic shear band, regular

  20. Ames Lab 101: Single Crystal Growth

    ScienceCinema (OSTI)

    Schlagel, Deborah

    2014-06-04

    Ames Laboratory scientist Deborah Schlagel talks about the Lab's research in growing single crystals of various metals and alloys. The single crystal samples are vital to researchers' understanding of the characteristics of a materials and what gives these materials their particular properties.

  1. The reliability and stability of multijunction amorphous silicon PV modules

    SciTech Connect (OSTI)

    Carlson, D.E.

    1995-11-01

    Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies are about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.

  2. Test-to-Failure of Crystalline Silicon Modules: Preprint

    SciTech Connect (OSTI)

    Hacke, P.; Terwilliger, K.; Glick, S.; Trudell, D.; Bosco, N.; Johnston, S.; Kurtz, S. R.

    2010-10-01

    Accelerated lifetime testing of five crystalline silicon module designs was carried out according to the Terrestrial Photovoltaic Module Accelerated Test-to-Failure Protocol. This protocol compares the reliability of various module constructions on a quantitative basis. The modules under test are subdivided into three accelerated lifetime testing paths: 85..deg..C/85% relative humidity with system bias, thermal cycling between ?40..deg..C and 85..deg..C, and a path that alternates between damp heat and thermal cycling. The most severe stressor is damp heat with system bias applied to simulate the voltages that modules experience when connected in an array. Positive 600 V applied to the active layer with respect to the grounded module frame accelerates corrosion of the silver grid fingers and degrades the silicon nitride antireflective coating on the cells. Dark I-V curve fitting indicates increased series resistance and saturation current around the maximum power point; however, an improvement in junction recombination characteristics is obtained. Shunt paths and cell-metallization interface failures are seen developing in the silicon cells as determined by electroluminescence, thermal imaging, and I-V curves in the case of negative 600 V bias applied to the active layer. Ability to withstand electrolytic corrosion, moisture ingress, and ion drift under system voltage bias are differentiated.

  3. Solar power conversion efficiency in modulated silicon nanowire photonic Alexei Deinega and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinega://jap.aip.org/about/rights_and_permissions #12;Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinegaa that using only 1 lm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power

  4. Monolithic amorphous silicon modules on continuous polymer substrate

    SciTech Connect (OSTI)

    Grimmer, D.P. (Iowa Thin Film Technologies, Inc., Ames, IA (United States))

    1992-03-01

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  5. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect (OSTI)

    Ghosh, M.; DelCueto, J.: Kampas, F.; Xi, J. )

    1993-02-01

    This report describes results from the first phase of a three-phase contract for the development of stable, high-efficiency, same-band-gap, amorphous silicon (a-Si) multijunction photovoltaic (PV) modules. The program involved improving the properties of individual layers of semiconductor and non-semiconductor materials and small-area single-junction and multijunction devices, as well as the multijunction modules. The semiconductor materials research was performed on a-Si p, i, and n layers, and on microcrystalline silicon n layers. These were deposited using plasma-enhanced chemical vapor deposition. The non-semiconductor materials studied were tin oxide, for use as a transparent-conducting-oxide (TCO), and zinc oxide, for use as a back reflector and as a buffer layer between the TCO and the semiconductor layers. Tin oxide was deposited using atmospheric-pressure chemical vapor deposition. Zinc oxide was deposited using magnetron sputtering. The research indicated that the major challenge in the fabrication of a-Si multijunction PV modules is the contact between the two p-i-n cells. A structure that has low optical absorption but that also facilitates the recombination of electrons from the first p-i-n structure with holes from the second p-i-n structure is required. Non-semiconductor layers and a-Si semiconductor layers were tested without achieving the desired result.

  6. Neutron detection with single crystal organic scintillators

    SciTech Connect (OSTI)

    Zaitseva, N; Newby, J; Hamel, S; Carman, L; Faust, M; Lordi, V; Cherepy, N; Stoeffl, W; Payne, S

    2009-07-15

    Detection of high-energy neutrons in the presence of gamma radiation background utilizes pulse-shape discrimination (PSD) phenomena in organics studied previously only with limited number of materials, mostly liquid scintillators and single crystal stilbene. The current paper presents the results obtained with broader varieties of luminescent organic single crystals. The studies involve experimental tools of crystal growth and material characterization in combination with the advanced computer modeling, with the final goal of better understanding the relevance between the nature of the organic materials and their PSD properties. Special consideration is given to the factors that may diminish or even completely obscure the PSD properties in scintillating crystals. Among such factors are molecular and crystallographic structures that determine exchange coupling and exciton mobility in organic materials and the impurity effect discussed on the examples of trans-stilbene, bibenzyl, 9,10-diphenylanthracene and diphenylacetylene.

  7. Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demsy and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demésy and Sajeev://jap.aip.org/authors Downloaded 12 Oct 2012 to 99.230.201.54. Redistribution subject to AIP license or copyright; see http://jap.aip.org/about/rights_and_permissions #12;Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demesya

  8. Highly efficient terahertz wave modulators by photo-excitation of organics/silicon bilayers

    SciTech Connect (OSTI)

    Yoo, Hyung Keun; Kang, Chul; Hwang, In-Wook; Yoon, Youngwoon; Lee, Kiejin; Kee, Chul-Sik; Lee, Joong Wook

    2014-07-07

    Using hybrid bilayer systems comprising a molecular organic semiconductor and silicon, we achieve optically controllable active terahertz (THz) modulators that exhibit extremely high modulation efficiencies. A modulation efficiency of 98% is achieved from thermally annealed C{sub 60}/silicon bilayers, due to the rapid photo-induced electron transfer from the excited states of the silicon onto the C{sub 60} layer. Furthermore, we demonstrate the broadband modulation of THz waves. The cut-off condition of the system that is determined by the formation of efficient charge separation by the photo-excitation is highly variable, changing the system from insulating to metallic. The phenomenon enables an extremely high modulation bandwidth and rates of electromagnetic waves of interest. The realization of near-perfect modulation efficiency in THz frequencies opens up the possibilities of utilizing active modulators for THz spectroscopy and communications.

  9. Ultratough CVD single crystal diamond and three dimensional growth thereof

    DOE Patents [OSTI]

    Hemley, Russell J. (Washington, DC); Mao, Ho-kwang (Washington, DC); Yan, Chih-shiue (Washington, DC)

    2009-09-29

    The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

  10. High-speed silicon electro-optic modulator for electronic photonic integrated circuits

    E-Print Network [OSTI]

    Gan, Fuwan

    2007-01-01

    The development of future electronic-photonic integrated circuits (EPIC) based on silicon technology critically depends on the availability of CMOS-compatible high-speed modulators that enable the interaction of electronic ...

  11. OPTO-ACOUSTIC OSCILLATOR USING SILICON MEMS OPTICAL MODULATOR Suresh Sridaran and Sunil A. Bhave

    E-Print Network [OSTI]

    Afshari, Ehsan

    is chosen for oscillation by the RF filter. The superior phase noise is due to the long energy storage timesOPTO-ACOUSTIC OSCILLATOR USING SILICON MEMS OPTICAL MODULATOR Suresh Sridaran and Sunil A. Bhave OxideMEMS Lab, Cornell University, Ithaca, NY, USA ABSTRACT We show operation of a silicon MEMS based

  12. MATERIALS PERSPECTIVE Intermittent plastic flow of single crystals

    E-Print Network [OSTI]

    Niewczas, Marek

    MATERIALS PERSPECTIVE Intermittent plastic flow of single crystals: central problems in plasticity: a review M. Niewczas* The relationships between microstructure and plastic flow properties of copper single crystals deformed at low temperatures are reviewed based on the analysis of experimental results

  13. Three-dimensional wave propagation through single crystal solidliquid interfaces

    E-Print Network [OSTI]

    Wadley, Haydn

    Three-dimensional wave propagation through single crystal solid­liquid interfaces Yichi Lua solid­ liquid interfaces during single crystal growth. A previously developed two-dimensional ray across solid­liquid interfaces in cylindrical bodies where the receiver is located at an arbitrary

  14. Synthesis and physical characterization of thermoelectric single crystals

    E-Print Network [OSTI]

    Porras Pérez Guerrero, Juan Pablo

    2012-01-01

    There is much current interest in thermoelectric devices for sustainable energy. This thesis describes a research project on the synthesis and physical characterization of thermoelectric single crystals. 1In?Se?-[delta] ...

  15. Comment on "Single Crystals of Single-Walled Carbon Nanotubes

    E-Print Network [OSTI]

    Natelson, Douglas

    Comment on "Single Crystals of Single-Walled Carbon Nanotubes Formed by Self-Assembly" Schlittler) by the thermolysis of nano- patterned structures of alternating layers of C60 and nickel. Electron diffraction, high

  16. OPTIMIZATION OF THE PARAMETERS IN THE RHIC SINGLE CRYSTAL HEAVY ION COLLIMATION.

    SciTech Connect (OSTI)

    BIRYUKOV,V.M.; CHESNOKOV,Y.A.; KOTOV,V.I.; TRBOJEVIC,D.; STEVENS,A.

    1999-03-29

    In the framework of the project to design and test a collimation system prototype using bent channeling crystal for cleaning of the RHIC heavy ion beam halo, we have studied the optimal length and bending angle of a silicon (110) single crystal proposed to be a primary element situated upstream of the traditional heavy amorphous collimator. Besides the matters of the channeling and collimation efficiency, we also looked into the impact the crystal may have on the non-channeled particles that go on circulating in the ring, so as to reduce the momentum offset of the particles scattered of the crystal.

  17. Single crystal Processing and magnetic properties of gadolinium nickel

    SciTech Connect (OSTI)

    Shreve, Andrew John [Ames Laboratory

    2012-11-02

    GdNi is a rare earth intermetallic material that exhibits very interesting magnetic properties. Spontaneous magnetostriction occurs in GdNi at T{sub C}, on the order of 8000ppm strain along the c-axis and only until very recently the mechanism causing this giant magnetostriction was not understood. In order to learn more about the electronic and magnetic structure of GdNi, single crystals are required for anisotropic magnetic property measurements. Single crystal processing is quite challenging for GdNi though since the rare-earth transition-metal composition yields a very reactive intermetallic compound. Many crystal growth methods are pursued in this study including crucible free methods, precipitation growths, and specially developed Bridgman crucibles. A plasma-sprayed Gd{sub 2}O{sub 3} W-backed Bridgman crucible was found to be the best means of GdNi single crystal processing. With a source of high-quality single crystals, many magnetization measurements were collected to reveal the magnetic structure of GdNi. Heat capacity and the magnetocaloric effect are also measured on a single crystal sample. The result is a thorough report on high quality single crystal processing and the magnetic properties of GdNi.

  18. Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rao, Ashutosh; Patil, Aniket; Chiles, Jeff; Malinowski, Marcin; Novak, Spencer; Richardson, Kathleen; Rabiei, Payam; Fathpour, Sasan

    2015-08-20

    In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge23Sb7S70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 ?m radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 105 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scale dense on-chip integration ofmore »high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.« less

  19. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  20. Fuel Performance Experiments on the Atomistic Level, Studying Fuel Through Engineered Single Crystal UO2

    SciTech Connect (OSTI)

    Burgett, Eric; Deo, Chaitanya; Phillpot, Simon

    2015-05-08

    Fuel Performance Experiments on the Atomistic Level, Studying Fuel Through Engineered Single Crystal UO2

  1. Degradation Analysis of Weathered Crystalline-Silicon PV Modules: Preprint

    SciTech Connect (OSTI)

    Osterwald, C. R.; Anderberg, A.; Rummel, S.; Ottoson, L.

    2002-05-01

    We present an analysis of the results of a solar weathering program that found a linear relationship between maximum power degradation and the total UV exposure dose for four different types of commercial crystalline Si modules. The average degradation rate for the four modules types was 0.71% per year. The analysis showed that losses of short-circuit current were responsible for the maximum power degradation. Judging by the appearance of the undegraded control modules, it is very doubtful that the short-circuit current losses were caused by encapsulation browning or obscuration. When we compared the quantum efficiency of a single cell in a degraded module to one from an unexposed control module, it appears that most of the degradation has occurred in the 800 - 1100 nm wave-length region, and not the short wavelength region.

  2. A Compact Hybrid Silicon/Electro-Optic Polymer Resonant Cavity Modulator Design

    E-Print Network [OSTI]

    Dunham, Scott

    . The high operating frequency and complex nature of the structure lead to a need for full 3D simulations silicon/electro-optic polymer slot waveguide structure is presented in this work. The device utilizes the electro-optic polymer in the cavity region to provide an active material for modulation and includes

  3. Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers

    E-Print Network [OSTI]

    Chen, Ray

    and Organic Polymers Xingyu Zhang*a , Amir Hosseinib , Jingdong Luoc , Alex K.-Y. Jenc , and Ray T. Chen optical modulator based on electro- optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW). The EO polymer is engineered for large EO activity and near-infrared transparency. The half

  4. Outdoor performance stability and controlled light-soak testing of amorphous silicon multijunction modules at NREL

    SciTech Connect (OSTI)

    Mrig, L.; Burdick, J.; Luft, W.; Kroposki, B.

    1994-12-31

    The National Renewable Energy Laboratory (NREL) has been testing amorphous silicon (a-Si) Photovoltaic (PV) modules for more than a decade. NREL has been conducting controlled light-soak testing of multijunction a-Si modules to characterize their performance for stability evaluation as well as to benchmark the technology status. Some of the test modules, after controlled light-soak testing, have been installed outdoors. The authors have observed that under outdoor exposure, the modules further degrade in performance, possibly due to lower outdoor temperatures and varying spectra. The paper presents data on the light-induced degradation for the third controlled light-soak test on multijunction a-Si modules as well as outdoor performance data on single- and multijunction modules under prevailing conditions.

  5. Outdoor performance stability and controlled light-soak testing of amorphous silicon multijunction modules at NREL

    SciTech Connect (OSTI)

    Mrig, L.; Burdick, J.; Luft, W.; Kroposki, B.

    1995-10-01

    The National Renewable Energy Laboratory (NREL) has been testing amorphous silicon (a-Si) Photovoltaic (PV) modules for more than a decade. NREL has been conducting controlled light-soak testing of multifunction a-Si modules to characterize their performance for stability evaluation as well as to benchmark the technology status. Some of the test modules, after controlled light-soak testing, have been installed outdoors. The authors have observed that under outdoor exposure, the modules further degrade in performance, possibly due to lower outdoor temperatures and varying spectra. The paper presents data on the light-induced degradation for the third controlled light-soak test on multijunction a-Si modules as well as outdoor performance data on single and multijunction modules under prevailing conditions.

  6. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    SciTech Connect (OSTI)

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  7. Growing intermetallic single crystals using in situ decanting

    SciTech Connect (OSTI)

    Petrovic, Cedomir; Canfield, Paul; Mellen, Jonathan

    2012-05-16

    High temperature metallic solution growth is one of the most successful and versatile methods for single crystal growth, and is particularly suited for exploratory synthesis. The method commonly utilizes a centrifuge at room temperature and is very successful for the synthesis of single crystal phases that can be decanted from the liquid below the melting point of the silica ampoule. In this paper, we demonstrate the extension of this method that enables single crystal growth and flux decanting inside the furnace at temperatures above 1200°C. This not only extends the number of available metallic solvents that can be used in exploratory crystal growth but also can be particularly well suited for crystals that have a rather narrow exposed solidification surface in the equilibrium alloy phase diagram.

  8. Apparatus And Method For Producing Single Crystal Metallic Objects

    DOE Patents [OSTI]

    Huang, Shyh-Chin (Latham, NY); Gigliotti, Jr., Michael Francis X. (Scotia, NY); Rutkowski, Stephen Francis (Duanesburg, NY); Petterson, Roger John (Fultonville, NY); Svec, Paul Steven (Scotia, NY)

    2006-03-14

    A mold is provided for enabling casting of single crystal metallic articles including a part-defining cavity, a sorter passage positioned vertically beneath and in fluid communication with the part-defining cavity, and a seed cavity positioned vertically beneath and in fluid communication with the sorter passage. The sorter passage includes a shape suitable for encouraging a single crystal structure in solidifying molten metal. Additionally, a portion of the mold between the sorter passage and the part-defining cavity includes a notch for facilitating breakage of a cast article proximate the notch during thermal stress build-up, so as to prevent mold breakage or the inclusion of part defects.

  9. SINGLE CRYSTAL NIOBIUM TUBES FOR PARTICLE COLLIDERS ACCELERATOR CAVITIES

    SciTech Connect (OSTI)

    MURPHY, JAMES E

    2013-02-28

    The objective of this research project is to produce single crystal niobium (Nb) tubes for use as particle accelerator cavities for the Fermi laboratory’s International Linear Collider project. Single crystal Nb tubes may have superior performance compared to a polycrystalline tubes because the absence of grain boundaries may permit the use of higher accelerating voltages. In addition, Nb tubes that are subjected to the high temperature, high vacuum crystallization process are very pure and well annealed. Any impurity with a significantly higher vapor pressure than Nb should be decreased by the relatively long exposure at high temperature to the high vacuum environment. After application of the single crystal process, the surfaces of the Nb tubes are bright and shiny, and the tube resembles an electro polished Nb tube. For these reasons, there is interest in single crystal Nb tubes and in a process that will produce single crystal tubes. To convert a polycrystalline niobium tube into a single crystal, the tube is heated to within a few hundred ?C of the melting temperature of niobium, which is 2477 ?C. RF heating is used to rapidly heat the tube in a narrow zone and after reaching the operating temperature, the hot zone is slowly passed along the length of the tube. For crystallization tests with Nb tubes, the traverse rate was in the range of 1-10 cm per hour. All the crystallization tests in this study were performed in a water-cooled, stainless steel chamber under a vacuum of 5 x10-6 torr or better. In earliest tests of the single crystal growth process, the Nb tubes had an OD of 1.9 cm and a wall thickness of 0.15 mm. With these relatively small Nb tubes, the single crystal process was always successful in producing single crystal tubes. In these early tests, the operating temperature was normally maintained at 2200 ?C, and the traverse rate was 5 cm per hour. In the next test series, the Nb tube size was increased to 3.8 cm OD and the wall thickness was increased 0.18 mm and eventually to 0.21 mm. Again, with these larger tubes, single crystal tubes were usually produced by the crystallization process. The power supply was generally operated at full output during these tests, and the traverse rate was 5 cm per hour. In a few tests, the traverse rate was increased to 10 cm per hour, and at the faster traverse rate, single crystal growth was not achieved. In these tests with a faster traverse rate, it was thought that the tube was not heated to a high enough temperature to achieve single crystal growth. In the next series of tests, the tube OD was unchanged at 3.8 cm and the wall thickness was increased to 0.30 mm. The increased wall thickness made it difficult to reach an operating temperature above 2,000 ?C, and although the single crystal process caused a large increase in the crystal grains, no single crystal tubes were produced. It was assumed that the operating temperature in these tests was not high enough to achieve single crystal growth. In FY 2012, a larger power supply was purchased and installed. With the new power supply, temperatures above the melting point of Nb were easily obtained regardless of the tube thickness. A series of crystallization tests was initiated to determine if indeed the operating temperature of the previous tests was too low to achieve single crystal growth. For these tests, the Nb tube OD remained at 3.8 cm and the wall thickness was 0.30 mm. The first test had an operating temperature of 2,000 ?C. and the operating temperature was increased by 50 ?C increments for each successive test. The final test was very near the Nb melting temperature, and indeed, the Nb tube eventually melted in the center of the tube. These tests showed that higher temperatures did yield larger grain sizes if the traverse rate was held constant at 5 cm per hour, but no single crystal tubes were produced even at the highest operating temperature. In addition, slowing the traverse rate to as low as 1 cm per hour did not yield a single crystal tube regardless of operating temperature. At this time, it

  10. High efficiency multijunction amorphous silicon alloy-based solar cells and modules

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.; Banerjeee, A.; Glatfelter, T.; Hoffman, K.; Xu, X. )

    1994-06-30

    We have achieved initial efficiency of 11.4% as confirmed by National Renewable Energy Laboratory (NREL) on a multijunction amorphous silicon alloy photovoltaic module of one-square-foot-area. [bold This] [bold is] [bold the] [bold highest] [bold initial] [bold efficiency] [bold confirmed] [bold by] [bold NREL] [bold for] [bold any] [bold thin] [bold film] [bold photovoltaic] [bold module]. After light soaking for 1000 hours at 50 [degree]C under one-sun illumination, a module with initial efficiency of 11.1% shows a stabilized efficiency of 9.5%. Key factors that led to this high performance are discussed.

  11. Field Experience with 3-Sun Mirror Module Systems

    SciTech Connect (OSTI)

    Fraas, Dr. Lewis; Avery, James E.; Huang, H,; Minkin, Leonid M; Fraas, J. X.; Maxey, L Curt; Gehl, Anthony C

    2008-01-01

    JX Crystals 3-sun PV mirror modules have now been operating in four separate systems in the field for up to 2 years. Two post-mounted 2-axis tracking arrays of 12 modules each were installed at the Shanghai Flower Park in April of 2006. Then 672 modules were installed in a 100 kW array on N-S horizontal beam trackers at the Shanghai Flower Port in November of 2006. Finally, sets of 4 modules were installed on azimuth-tracking carousels on buildings at the Oak Ridge National Lab and at the U. of Nevada in Las Vegas in late 2007. All of these modules in each of these systems are still operating at their initial power ratings. No degradation in performance has been observed. The benefit of these 3-sun PV mirror modules is that they use 1/3 of the silicon single-crystal cell material in comparison to traditional planar modules. Since aluminum mirrors are much cheaper than high-purity single-crystal silicon-cells, these modules and systems should be much lower in cost when manufactured in high volume.

  12. Efficient Modulation of 1.55 m Radiation with Gated Graphene on a Silicon Micro-ring Resonator

    E-Print Network [OSTI]

    Natelson, Douglas

    with complementary metal-oxide-semiconductor technology. #12;(TOC) Keywords: graphene photonics, NIR modulatorEfficient Modulation of 1.55 µm Radiation with Gated Graphene on a Silicon Micro-ring Resonator-edge onset of interband absorption in graphene can be utilized to modulate near-infrared radiation

  13. NANO-SCALE CALORIMETRY OF ISOLATED POLYETHYLENE SINGLE CRYSTALS

    E-Print Network [OSTI]

    Allen, Leslie H.

    #12;NANO-SCALE CALORIMETRY OF ISOLATED POLYETHYLENE SINGLE CRYSTALS BY ALEX TAN KWAN B.S., Stanford) device, the nanocalorimeter, it was possible to investigate the melting of isolated polyethylene (PE, a simple Ni-foil calorimeter, to measure the heat capacity of a thin polyethylene film to verify

  14. BEAM TEST of the ATLAS SILICON DETECTOR MODULES with BINARY READOUT in the CERN H8 BEAM in 1996 1

    E-Print Network [OSTI]

    BEAM TEST of the ATLAS SILICON DETECTOR MODULES with BINARY READOUT in the CERN H8 BEAM in 1996 1 F, Spain, 21 Univ. of Wisconsin, Madison, WI, USA ABSTRACT Results are reported from a beam test

  15. Photovoltaic Cz silicon module improvements. Annual technical progress report, November 9, 1995--November 8, 1996

    SciTech Connect (OSTI)

    King, R.R.; Mitchell, K.W.; Jester, T.L. [Siemens Solar Industries, Camarillo, CA (United States)

    1998-02-01

    Work focused on reducing the cost per watt of Cz silicon photovoltaic modules under Phase I of Siemens Solar Industries` DOE/NREL PVMaT 4A subcontract is described. Module cost components are analyzed and solutions to high-cost items are discussed in terms of specific module designs. The approaches of using larger cells and modulus to reduce per-part processing cost, and of minimizing yield loss are particularly leveraging. Yield components for various parts of the fabrication process and various types of defects are shown, and measurements of the force required to break wafers throughout the cell fabrication sequence are given. The most significant type of yield loss is mechanical breakage. The implementation of statistical process control on key manufacturing processes at Siemens Solar Industries is described. Module configurations prototyped during Phase I of this project and scheduled to begin production in Phase II have a projected cost per watt reduction of 19%.

  16. Electrical production testing of the D0 Silicon microstrip tracker detector modules

    SciTech Connect (OSTI)

    D0, SMT Production Testing Group; /Fermilab

    2006-03-01

    The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

  17. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    SciTech Connect (OSTI)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  18. Single-Crystal Structure of a Covalent Organic Framework

    SciTech Connect (OSTI)

    Zhang, YB; Su, J; Furukawa, H; Yun, YF; Gandara, F; Duong, A; Zou, XD; Yaghi, OM

    2013-11-06

    The crystal structure of a new covalent organic framework, termed COF-320, is determined by single-crystal 3D electron diffraction using the rotation electron diffraction (RED) method for data collection. The COF crystals are prepared by an imine condensation of tetra-(4-anilyl)methane and 4,4'-biphenyldialdehyde in 1,4-dioxane at 120 degrees C to produce a highly porous 9-fold interwoven diamond net. COF-320 exhibits permanent porosity with a Langmuir surface area of 2400 m(2)/g and a methane total uptake of 15.0 wt % (176 cm(3)/cm(3)) at 25 degrees C and 80 bar. The successful determination of the structure of COF-320 directly from single-crystal samples is an important advance in the development of COF chemistry.

  19. Growth and characterization of lithium yttrium borate single crystals

    SciTech Connect (OSTI)

    Singh, A. K.; Singh, S. G.; Tyagi, M.; Desai, D. G.; Sen, Shashwati

    2014-04-24

    Single crystals of 0.1% Ce doped Li{sub 6}Y(BO{sub 3}){sub 3} have been grown using the Czochralski technique. The photoluminescence study of these crystals shows a broad emission at ? 420 nm corresponding to Ce{sub 3+} emission from 5d?4f energy levels. The decay profile of this emission shows a fast response of ? 28 ns which is highly desirable for detector applications.

  20. Experiences in Large Grain-Single Crystal Cavity Fabrication

    SciTech Connect (OSTI)

    Pekeler, Michael; Schwellenbach, Johannes; Tradt, Marco

    2007-08-09

    At ACCEL instruments several single cell and 9-cell cavities have been produced out of large grain niobium sheets from different suppliers. The fabrication experience and difference to the production out of fine grain niobium sheets will be described. In addition two cavities were produced using single crystal niobium sheets. The final cavities showed no grain boundaries at all in the cavity cell, even not in the electron beam welding seam.

  1. Interfacial dislocation motion and interactions in single-crystal superalloys

    SciTech Connect (OSTI)

    Liu, B. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Raabe, D. [Max Planck Inst. fur Eisenforshung. Dusseldorf (Germany); Roters, F. [Max Planck Inst. fur Eisenforshung. Dusseldorf (Germany); Arsenlis, A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-10-01

    The early stage of high-temperature low-stress creep in single-crystal superalloys is characterized by the rapid development of interfacial dislocation networks. Although interfacial motion and dynamic recovery of these dislocation networks have long been expected to control the subsequent creep behavior, direct observation and hence in-depth understanding of such processes has not been achieved. Incorporating recent developments of discrete dislocation dynamics models, we simulate interfacial dislocation motion in the channel structures of single-crystal superalloys, and investigate how interfacial dislocation motion and dynamic recovery are affected by interfacial dislocation interactions and lattice misfit. Different types of dislocation interactions are considered: self, collinear, coplanar, Lomer junction, glissile junction, and Hirth junction. The simulation results show that strong dynamic recovery occurs due to the short-range reactions of collinear annihilation and Lomer junction formation. The misfit stress is found to induce and accelerate dynamic recovery of interfacial dislocation networks involving self-interaction and Hirth junction formation, but slow down the steady interfacial motion of coplanar and glissile junction forming dislocation networks. The insights gained from these simulations on high-temperature low-stress creep of single-crystal superalloys are also discussed.

  2. Study of anisotropic character induced by microscale laser shock peening on a single crystal aluminum

    E-Print Network [OSTI]

    Yao, Y. Lawrence

    . The influence of crystalline orientation is investigated using single crystal plasticity in finite elementStudy of anisotropic character induced by microscale laser shock peening on a single crystal simulations are employed to characterize and analyze anisotropic responses for single crystal aluminum under

  3. Measurement of thermal conductivity in proton irradiated silicon

    SciTech Connect (OSTI)

    Marat Khafizov; Clarissa Yablinsky; Todd Allen; David Hurley

    2014-04-01

    We investigate the influence of proton irradiation on thermal conductivity in single crystal silicon. We apply laser based modulated thermoreflectance technique to extract the change in conductivity of the thin layer damaged by proton irradiation. Unlike time domain thermoreflectance techniques that require application of a metal film, we perform our measurement on uncoated samples. This provides greater sensitivity to the change in conductivity of the thin damaged layer. Using sample temperature as a parameter provides a means to deduce the primary defect structures that limit thermal transport. We find that under high temperature irradiation the degradation of thermal conductivity is caused primarily by extended defects.

  4. Photoproduction of electron-positron pairs in bent single crystals

    E-Print Network [OSTI]

    Chesnokov, Yu A; Bolognini, D; Hasan, S; Prest, M; Vallazza, E

    2010-01-01

    The process of photoproduction of electron-positron pairs in bent single crystals is considered in this paper. In particular, it is shown that the probability of the process for gamma-quanta with energies from 100 GeV on is significantly higher than the one in an amorphous medium. A possible scenario for the experimental validation of the process is discussed and the positive features of the photoproduction in bent crystals compared to straight ones are underlined from the point of view of possible applications.

  5. Lithium niobate single-crystal and photo-functional device

    DOE Patents [OSTI]

    Gopalan, Venkatraman (State College, PA); Mitchell, Terrence E. (Los Alamos, NM); Kitamura, Kenji (Tsukuba, JP); Furukawa, Yasunori (Tsukuba, JP)

    2001-01-01

    Provided are lithium niobate single-crystal that requires a low voltage of not larger than 10 kV/nm for its ferroelectric polarization inversion and of which the polarization can be periodically inverted with accuracy even at such a low voltage, and a photo-functional device comprising the crystal. The crystal has a molar fraction of Li.sub.2 O/(Nb.sub.2 O.sub.5 +Li.sub.2 O) of falling between 0.49 and 0.52. The photo-functional device can convert a laser ray being incident thereon.

  6. Acquisition of Single Crystal Growth and Characterization Equipment

    SciTech Connect (OSTI)

    Maple, M. Brian; Zocco, Diego A.

    2008-12-09

    Final Report for DOE Grant No. DE-FG02-04ER46178 'Acquisition of Single Crystal Growth and Characterization Equipment'. There is growing concern in the condensed matter community that the need for quality crystal growth and materials preparation laboratories is not being met in the United States. It has been suggested that there are too many researchers performing measurements on too few materials. As a result, many user facilities are not being used optimally. The number of proficient crystal growers is too small. In addition, insufficient attention is being paid to the enterprise of finding new and interesting materials, which is the driving force behind much of condensed matter research and, ultimately, technology. While a detailed assessment of this situation is clearly needed, enough evidence of a problem already exists to compel a general consensus that the situation must be addressed promptly. This final report describes the work carried out during the last four years in our group, in which a state-of-the-art single crystal growth and characterization facility was established for the study of novel oxides and intermetallic compounds of rare earth, actinide and transition metal elements. Research emphasis is on the physics of superconducting (SC), magnetic, heavy fermion (HF), non-Fermi liquid (NFL) and other types of strongly correlated electron phenomena in bulk single crystals. Properties of these materials are being studied as a function of concentration of chemical constituents, temperature, pressure, and magnetic field, which provide information about the electronic, lattice, and magnetic excitations at the root of various strongly correlated electron phenomena. Most importantly, the facility makes possible the investigation of material properties that can only be achieved in high quality bulk single crystals, including magnetic and transport phenomena, studies of the effects of disorder, properties in the clean limit, and spectroscopic and scattering studies through efforts with numerous collaborators. These endeavors will assist the effort to explain various outstanding theoretical problems, such as order parameter symmetries and electron-pairing mechanisms in unconventional superconductors, the relationship between superconductivity and magnetic order in certain correlated electron systems, the role of disorder in non-Fermi liquid behavior and unconventional superconductivity, and the nature of interactions between localized and itinerant electrons in these materials. Understanding the mechanisms behind strongly correlated electron behavior has important technological implications.

  7. Method for thermal processing alumina-enriched spinel single crystals

    DOE Patents [OSTI]

    Jantzen, C.M.

    1995-05-09

    A process for age-hardening alumina-rich magnesium aluminum spinel to obtain the desired combination of characteristics of hardness, clarity, flexural strength and toughness comprises selection of the time-temperature pair for isothermal heating followed by quenching. The time-temperature pair is selected from the region wherein the precipitate groups have the characteristics sought. The single crystal spinel is isothermally heated and will, if heated long enough pass from its single phase through two pre-precipitates and two metastable precipitates to a stable secondary phase precipitate within the spinel matrix. Quenching is done slowly at first to avoid thermal shock, then rapidly. 12 figs.

  8. World's largest single crystal of gold verified at Los Alamos

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservationBio-Inspired SolarAbout /Two0PhotosPresentationsWorld's largest single crystal of

  9. Advances in amorphous silicon alloy-based multijunction cells and modules

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.; Banerjee, A.; Glatfelter, T.; Xu, X. )

    1992-12-01

    Multijunction amorphous silicon alloy-based solar cells and modules offer the potential of obtaining high efficiency with long-term stability against light-induced degradation. We have studied the stability of the component cells of the multijunction devices prepared under different deposition conditions. We observe a definite correlation between the microstructure of the intrinsic material and initial and light-degraded performance of the cells. Using suitable deposition conditions and optimum matching of the component cells, we have fabricated double-junction dual-bandgap cells which show stabilized active-area efficiency of 11% after 600 hours of one-sun illumination at 50 [degree]C. Double-junction and triple-junction modules of 900 cm[sup 2] area have been fabricated, and the performance of these panels will be discussed.

  10. Method of forming buried oxide layers in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir City, TN)

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  11. Apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel (San Jose, CA)

    1986-05-20

    Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  12. Single crystal metal wedges for surface acoustic wave propagation

    DOE Patents [OSTI]

    Fisher, Edward S. (Wheaton, IL)

    1982-01-01

    An ultrasonic testing device has been developed to evaluate flaws and inhomogeneities in the near-surface region of a test material. A metal single crystal wedge is used to generate high frequency Rayleigh surface waves in the test material surface by conversion of a slow velocity, bulk acoustic mode in the wedge into a Rayleigh wave at the metal-wedge test material interface. Particular classes of metals have been found to provide the bulk acoustic modes necessary for production of a surface wave with extremely high frequency and angular collimation. The high frequency allows flaws and inhomogeneities to be examined with greater resolution. The high degree of angular collimation for the outgoing ultrasonic beam permits precision angular location of flaws and inhomogeneities in the test material surface.

  13. Single crystal metal wedges for surface acoustic wave propagation

    DOE Patents [OSTI]

    Fisher, E.S.

    1980-05-09

    An ultrasonic testing device has been developed to evaluate flaws and inhomogeneities in the near-surface region of a test material. A metal single crystal wedge is used to generate high frequency Rayleigh surface waves in the test material surface by conversion of a slow velocity, bulk acoustic mode in the wedge into a Rayleigh wave at the metal-wedge test material interface. Particular classes of metals have been found to provide the bulk acoustic modes necessary for production of a surface wave with extremely high frequency and angular collimation. The high frequency allows flaws and inhomogeneities to be examined with greater resolution. The high degree of angular collimation for the outgoing ultrasonic beam permits precision angular location of flaws and inhomogeneities in the test material surface.

  14. Shock compression experiments on Lithium Deuteride single crystals.

    SciTech Connect (OSTI)

    Knudson, Marcus D.; Desjarlais, Michael P.; Lemke, Raymond W.

    2014-10-01

    S hock compression exper iments in the few hundred GPa (multi - Mabr) regime were performed on Lithium Deuteride (LiD) single crystals . This study utilized the high velocity flyer plate capability of the Sandia Z Machine to perform impact experiments at flyer plate velocities in the range of 17 - 32 km/s. Measurements included pressure, density, and temperature between ~200 - 600 GPa along the Principal Hugoniot - the locus of end states achievable through compression by large amplitude shock waves - as well as pressure and density of re - shock states up to ~900 GPa . The experimental measurements are compared with recent density functional theory calculations as well as a new tabular equation of state developed at Los Alamos National Labs.

  15. Mapping mesoscale heterogeneity in the plastic deformation of a copper single crystal

    E-Print Network [OSTI]

    Magid, K. R.

    2009-01-01

    1 Introduction Crystal plasticity is a heterogeneousmodeling of crystal plasticity promise significant advancesthe mechanisms of plasticity in single crystal copper. The

  16. Growth and characterization of diammonium copper disulphate hexahydrate single crystal

    SciTech Connect (OSTI)

    Siva Sankari, R.; Perumal, Rajesh Narayana

    2014-03-01

    Graphical abstract: Diammonium copper disulphate hexahydrate (DACS) is one of the most promising inorganic dielectric crystals with exceptional mechanical properties. Good quality crystals of DACS were grown by using solution method in a period of 30 days. The grown crystals were subjected to single crystal X-ray diffraction analysis in order to establish their crystalline nature. Thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis were performed for the crystal. Several solid state physical parameters have been determined for the grown crystals. The dielectric constant and the dielectric loss and AC conductivity of the grown crystal were studied as a function of frequency and temperature has been calculated and plotted. - Highlights: • Diammonium copper disulphate is grown for the first time and CCDC number obtained. • Thermal analysis is done to see the stability range of the crystals. • Band gap and UV cut off wavelength of the crystal are determined to be 2.4 eV and 472.86 nm, respectively. • Dielectric constant, dielectric loss and AC conductivity are plotted as a function of applied field. - Abstract: Diammonium copper disulphate hexahydrate is one of the most promising inorganic crystals with exceptional dielectric properties. A good quality crystal was harvested in a 30-day period using solution growth method. The grown crystal was subjected to various characterization techniques like single crystal X-ray diffraction analysis, thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis. Unit cell dimensions of the grown crystal have been identified from XRD studies. Functional groups of the title compounds have been identified from FTIR studies. Thermal stability of the samples was checked by TG/DTA studies. Band gap of the crystal was calculated. The dielectric constant and dielectric loss were studied as a function of frequency of the applied field. AC conductivity was plotted as a function of temperature.

  17. Orientation dependence of plastic deformation in nickel-based single crystal superalloys: Discretecontinuous model simulations

    E-Print Network [OSTI]

    Devincre, Benoit

    Orientation dependence of plastic deformation in nickel-based single crystal superalloys: Discrete of single-crystal nickel-based superalloys is simulated. At 1123 K, two uniaxial tensile loading cases though no cubic slip systems are activated. In the [001] case, the plastic flow is distributed more

  18. Nanoscale Anisotropic Plastic Deformation in Single Crystal Aragonite C. Kearney,1

    E-Print Network [OSTI]

    Nanoscale Anisotropic Plastic Deformation in Single Crystal Aragonite C. Kearney,1 Z. Zhao,2 B. J; published 30 June 2006) The nanoscale anisotropic elastic-plastic behavior of single-crystal aragonite coaxial to the c axis exhibited load plateaus indicative of dislocation nucleation events. Plasticity

  19. A LIFETIME PREDICTION MODEL FOR SINGLE CRYSTAL SUPERALLOYS SUBJECTED TO THERMOMECHANICAL

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    materials tensile, creep and LCF test data at different temperatures. Some parameters, independentA LIFETIME PREDICTION MODEL FOR SINGLE CRYSTAL SUPERALLOYS SUBJECTED TO THERMOMECHANICAL CREEP for Single Crystal Superalloys operated at high temperatures and subjected to creep, fatigue and oxidation

  20. Fracture of colloidal single-crystal films fabricated by controlled vertical drying deposition Ding Lan,1,*,

    E-Print Network [OSTI]

    Volinsky, Alex A.

    Fracture of colloidal single-crystal films fabricated by controlled vertical drying deposition He was used to make high-quality single crystal close-packed colloidal films formed of different radii the last few years colloidal crystals have attracted researchers' attention due to their potential

  1. Single Crystal Diamond Beam Position Monitors with Radiofrequency Electronic Readout

    SciTech Connect (OSTI)

    Solar, B.; Graafsma, H.; Potdevin, G.; Trunk, U. [Hasylab, Deutsches Elektronen Synchroton, Hamburg (Germany); Morse, J.; Salome, M. [Instrumentation Services and Development Division, European Synchroton Radiation Facility, Grenoble (France)

    2010-06-23

    Over the energy range 5{approx}30 keV a suitably contacted, thin ({approx}100 {mu}m) diamond plate can be operated in situ as a continuous monitor of X-ray beam intensity and position as the diamond absorbs only a small percentage of the incident beam. Single crystal diamond is a completely homogeneous material showing fast (ns), spatially uniform signal response and negligible (

  2. DEVELOPMENT OF PROTECTIVE COATINGS FOR SINGLE CRYSTAL TURBINE BLADES

    SciTech Connect (OSTI)

    Amarendra K. Rai

    2006-12-04

    Turbine blades in coal derived syngas systems are subject to oxidation and corrosion due to high steam temperature and pressure. Thermal barrier coatings (TBCs) are developed to address these problems. The emphasis is on prime-reliant design and a better coating architecture, having high temperature and corrosion resistance properties for turbine blades. In Phase I, UES Inc. proposed to develop, characterize and optimize a prime reliant TBC system, having smooth and defect-free NiCoCrAlY bond layer and a defect free oxide sublayer, using a filtered arc technology. Phase I work demonstrated the deposition of highly dense, smooth and defect free NiCoCrAlY bond coat on a single crystal CMSX-4 substrate and the deposition of alpha-alumina and yttrium aluminum garnet (YAG) sublayer on top of the bond coat. Isothermal and cyclic oxidation test and pre- and post-characterization of these layers, in Phase I work, (with and without top TBC layer of commercial EB PVD YSZ) revealed significant performance enhancement.

  3. Radiation tolerance of piezoelectric bulk single-crystal aluminum nitride

    SciTech Connect (OSTI)

    David A. Parks; Bernhard R. Tittmann

    2014-07-01

    For practical use in harsh radiation environments, we pose selection criteria for piezoelectric materials for nondestructive evaluation (NDE) and material characterization. Using these criteria, piezoelectric aluminum nitride is shown to be an excellent candidate. The results of tests on an aluminumnitride-based transducer operating in a nuclear reactor are also presented. We demonstrate the tolerance of single-crystal piezoelectric aluminum nitride after fast and thermal neutron fluences of 1.85 × 1018 neutron/cm2 and 5.8 × 1018 neutron/cm2, respectively, and a gamma dose of 26.8 MGy. The radiation hardness of AlN is most evident from the unaltered piezoelectric coefficient d33, which measured 5.5 pC/N after a fast and thermal neutron exposure in a nuclear reactor core for over 120 MWh, in agreement with the published literature value. The results offer potential for improving reactor safety and furthering the understanding of radiation effects on materials by enabling structural health monitoring and NDE in spite of the high levels of radiation and high temperatures, which are known to destroy typical commercial ultrasonic transducers.

  4. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; Parashchuk, T. O.; Freik, D. M.; Panchuk, O. E.; James, R. B.; Gorichok, I. V.

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10? Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²?Cd, Cd²?i, V²?Te, Te²?i), and substitutional ones (Br?Te, Br?Te), as well as complexes of point defects, i.e., (Br?Te V²?Cd)? and (2Br?Te V²?Cd)?. We established the concentration dependence between free charge carriers and themore »parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br?Te and (2Br?Te V²?Cd)?. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.« less

  5. The Defect Energies and Deformation Mechanisms of Single Crystal Superalloys

    E-Print Network [OSTI]

    Hillier, Graham Stewart

    1985-01-29

    Element Nimonic 75 Nimonic 80 A Mar-M 002 Mar-M 200 SRR 99 Ni 76.0 70.7 60.5 59.5 66.5 Ai 2.7 12.2 11.2 12.1 Ti 0.5 2.9 1.9 2.5 2.7 Cr 21.8 20.8 10.2 10.4 9.7 Co 1.1 10.0 10.2 4.6 W 3.2 4.1 3.0 Ta 0.8 0.9 Nb 0.7 Mn 0.1 0.1 Si 1.4 1.4 C 0.3 0.3 0.7 0.7 <0... MECHANISMS OF SINGLE CRYSTAL SUPERALLOYS by Graham Stewart Hillier, B.Met. st. John's College Cambridge A dissertation submitted for the degree. of Philosophiae Doctor at the University of Cambridge September 1984 Dedicated to my Mum and Dad PREFACE...

  6. Broadband energy-efficient optical modulation by hybrid integration of silicon nanophotonics and organic electro-optic polymer

    E-Print Network [OSTI]

    Zhang, Xingyu; Subbaraman, Harish; Luo, Jingdong; Jen, Alex K -Y; Chung, Chi-jui; Yan, Hai; Pan, Zeyu; Nelson, Robert L; Chen, Ray T

    2015-01-01

    Silicon-organic hybrid integrated devices have emerging applications ranging from high-speed optical interconnects to photonic electromagnetic-field sensors. Silicon slot photonic crystal waveguides (PCWs) filled with electro-optic (EO) polymers combine the slow-light effect in PCWs with the high polarizability of EO polymers, which promises the realization of high-performance optical modulators. In this paper, a broadband, power-efficient, low-dispersion, and compact optical modulator based on an EO polymer filled silicon slot PCW is presented. A small voltage-length product of V{\\pi}*L=0.282Vmm is achieved, corresponding to an unprecedented record-high effective in-device EO coefficient (r33) of 1230pm/V. Assisted by a backside gate voltage, the modulation response up to 50GHz is observed, with a 3-dB bandwidth of 15GHz, and the estimated energy consumption is 94.4fJ/bit at 10Gbit/s. Furthermore, lattice-shifted PCWs are utilized to enhance the optical bandwidth by a factor of ~10X over other modulators bas...

  7. Luminescence Properties of ScPO{sub 4} Single Crystals

    SciTech Connect (OSTI)

    Boatner, L.A.; Trukhin, A.N.

    1999-08-16

    Flux-grown ScPO{sub 4} single crystals exhibit a number of luminescence bands in their x-ray-excited luminescence spectra - including sharp lines arising from rare-earth elements plus a number of broad bands at 5.6 cV, 4.4 eV, and 3 eV. The band at 5.6 eV was attributed to a self-trapped exciton (STE) [l], and it could be excited at 7 eV and higher energies. This luminescence is strongly polarized (P = 70 %) along the optical axes of the crystal and exhibits a kinetic decay time constant that varies from several ns at room temperature to {approximately}10 {micro}s at 60 K and up to {approximately}1 ms at 10 K. It is assumed that the STE is localized on the SC ions. The band at 3 eV can be excited in the range of the ScPO{sub 4} crystal transparency (decay time = 3 to 4 {micro}s.) This band is attributed to a lead impurity that creates different luminescence centers. At high temperatures, the band at 4.4 eV is dominant in the x-ray-excited TSL and afterglow spectra. Its intensity increases with irradiation time beginning at zero at the initial irradiation time. The 4.4 eV band does not appear in a fast process under a pulsed electron beam, showing that accumulation is necessary for its observation. A sample of ScPO{sub 4} doped with vanadium exhibited a prevalent band at 4.4 eV at T = 480 K.

  8. Tantalum Shear Modulus from Homogenization of Single Crystal Data

    SciTech Connect (OSTI)

    Becker, R

    2007-09-14

    Elastic constants for tantalum single crystals have been calculated by Orlikowski, et al. [1] for a broad range of temperatures and pressures. These moduli can be utilized directly in continuum crystal simulations or dislocation dynamics calculations where the individual grains of the polycrystalline material are explicitly represented. For simulations on a larger size scale, the volume of material represented by the quadrature points of the simulation codes includes many grains, and average moduli are needed. Analytic bounding and averaging schemes exist, but since these do not account for nonuniform stress and strain within the interacting grains, the upper and lower bounds tend to diverge as the crystal anisotropy increases. Local deformation and stress equilibrium accommodate the anisotropic response of the individual grains. One method of including grain interactions in shear modulus averaging calculations is through a highly-descretized finite element model of a polycrystal volume. This virtual test sample (VTS) can be probed to determine the average response of the polycrystal. The desire to obtain isotropic moduli imposes attributes on the VTS. The grains should be equiax and the crystal orientation distribution function should be random. For these simulations, a cube, 300 {micro}m on a side, was discretized with 1 million finite elements on a regular rectangular mesh. The mesh was seeded with 1000 grains generated using a constrained-random placement algorithm, Figure 1. Since the orientations were simply painted in the mesh, the grain boundaries are irregular. The orientation distribution function is shown as pole figure in Figure 2. It has the appearance of being random. Analysis of the simulation results will be used to determine if the randomness of the texture and number of grains are adequate.

  9. Growth and properties of Lithium Salicylate single crystals

    SciTech Connect (OSTI)

    Zaitseva, N; Newby, J; Hull, G; Saw, C; Carman, L; Cherepy, N; Payne, S

    2009-02-13

    An attractive feature of {sup 6}Li containing fluorescence materials that determines their potential application in radiation detection is the capture reaction with slow ({approx}< 100 keV) neutrons: {sup 6}Li + n = {sup 4}He + {sup 3}H + 4.8MeV. The use of {sup 6}Li-salicylate (LiSal, LiC{sub 6}H{sub 5}O{sub 3}) for thermal neutron detection was previously studied in liquid and polycrystalline scintillators. The studies showed that both liquid and polycrystalline LiSal scintillators could be utilized in pulse shape discrimination (PSD) techniques that enable separation of neutrons from the background gamma radiation. However, it was found that the efficiency of neutron detection using LiSal in liquid solutions was severely limited by its low solubility in commonly used organic solvents like, for example, toluene or xylene. Better results were obtained with neutron detectors containing the compound in its crystalline form, such as pressed pellets, or microscopic-scale (7-14 micron) crystals dispersed in various media. The expectation drown from these studies was that further improvement of pulse height, PSD, and efficiency characteristics could be reached with larger and more transparent LiSal crystals, growth of which has not been reported so far. In this paper, we present the first results on growth and characterization of relatively large, a cm-scale size, single crystals of LiSal with good optical quality. The crystals were grown both from aqueous and anhydrous (methanol) media, mainly for neutron detection studies. However, the results on growth and structural characterization may be interesting for other fields where LiSal, together with other alkali metal salicylates, is used for biological, medical, and chemical (as catalyst) applications.

  10. Research on stable, high-efficiency amorphous silicon multijunction modules. Final subcontract report, 1 January 1991--31 August 1994

    SciTech Connect (OSTI)

    Guha, S.

    1994-10-01

    The principal objective of this program is to conduct research on semiconductor materials and non-semiconductor materials to enhance the performance of multibandgap, multijunction, large-area amorphous silicon-based alloy modules. The goal for this program is to demonstrate stabilized module efficiency of 12% for multijunction modules of area greater than 900 cm{sup 2}. Double-junction and triple-junction cells are made on Ag/ZnO back reflector deposited on stainless steel substrates. The top cell uses a-Si alloy; a-SiGe alloy is used for the i layer in the middle and the bottom cells. After evaporation of antireflection coating, silver grids and bus bars are put on the top surface, and the panel is encapsulated in an ethylene vinyl acetate (EVA)/Tefzel structure to make a one-square-foot monolithic module.

  11. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    SciTech Connect (OSTI)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2005-11-01

    This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

  12. Hydrothermal growth of single crystals of the quantum magnets: Clinoatacamite, paratacamite, and herbertsmithite

    E-Print Network [OSTI]

    Müller, Peter

    In this report, we describe crystal growth technology and characterizations of clinoata- camite, paratacamiteHydrothermal growth of single crystals of the quantum magnets: Clinoatacamite, paratacamite and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2 Department

  13. Synthesis and single crystal x-ray diffraction study of a Schiff...

    Office of Scientific and Technical Information (OSTI)

    single crystal x-ray diffraction study of a Schiff base derived from 4-acylpyrazolone and 2-aminophenol Re-direct Destination: The title compound, (Z)-1-(3-chlorophenyl)-41((2hydr...

  14. Testing and Analysis for Lifetime Prediction of Crystalline Silicon PV Modules Undergoing Degradation by System Voltage Stress: Preprint

    SciTech Connect (OSTI)

    Hacke, P.; Smith, R.; Terwiliger, K.; Glick, S.; Jordan, D.; Johnston, S.; Kempe, M.; Kurtz, S.

    2012-07-01

    Acceleration factors are calculated for crystalline silicon PV modules under system voltage stress by comparing the module power during degradation outdoors to that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined, and the probability of module failure at an arbitrary temperature is predicted. To obtain statistical data for multiple modules over the course of degradation in-situ of the test chamber, dark I-V measurements are obtained and transformed using superposition, which is found well suited for rapid and quantitative evaluation of potential-induced degradation. It is determined that shunt resistance measurements alone do not represent the extent of power degradation. This is explained with a two-diode model analysis that shows an increasing second diode recombination current and ideality factor as the degradation in module power progresses. Failure modes of the modules stressed outdoors are examined and compared to those stressed in accelerated tests.

  15. Process and apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel (San Jose, CA)

    1988-06-28

    Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  16. Research on stable, high-efficiency amorphous silicon multijunction modules. Semiannual subcontract report, 1 March 1993--30 November 1993

    SciTech Connect (OSTI)

    Guha, S.

    1994-03-01

    This report describes the progress made during the first half of Phase III of the R&D program to obtain high-efficiency amorphous silicon alloy multijunction modules. The highlight of the work includes (1) demonstration of the world`s highest initial module efficiency (area of 0.09 m{sup 2}) of 11.4% as confirmed by NREL, and (2) demonstration of stable module efficiency of 9.5% after 1-sun light soaking for 1000 h at 50{degrees}C. In addition, fundamental studies were carried out to improve material properties of the component cells of the multijunction structure and to understand the optical losses associated with the back reflector.

  17. Mechanical Dissipation in Silicon Flexures

    E-Print Network [OSTI]

    S. Reid; G. Cagnoli; D. R. M. Crooks; J. Hough; P. Murray; S. Rowan; M. M. Fejer; R. Route; S. Zappe

    2005-10-28

    The thermo-mechanical properties of silicon make it of significant interest as a possible material for mirror substrates and suspension elements for future long-baseline gravitational wave detectors. The mechanical dissipation in 92um thick single-crystal silicon cantilevers has been observed over the temperature range 85 K to 300 K, with dissipation approaching levels down to phi = 4.4E-7.

  18. Carousel Trackers with 1-Sun or 3-Sun Modules for Commercial Building Rooftops

    SciTech Connect (OSTI)

    Gehl, Anthony C; Maxey, L Curt; Fraas, Dr. Lewis; Avery, James E.; Minkin, Leonid M; Huang, H,

    2008-01-01

    The goal is lower cost solar electricity. Herein, two evolutional steps are described toward achieving this goal. The first step is to follow the sun with a solar tracker. Herein, a carousel tracker is described for mounting on commercial building flat rooftops in order to produce more kWh per kW relative to fixed PV modules. The second evolutionary improvement is to produce lower cost 3-sun CPV modules where two thirds of the expensive single crystal silicon material is replaced by less expensive mirror material. This paper describes the performance and durability of two prototype installations demonstrating these evolutionary innovations. In the first case, the installation and operation of 2 carousels equipped with traditional flat plate modules is described. In the second case, the operation of a carousel equipped with new 3-sun CPV modules is described. Both systems have been operating as expected for several months through the winter of 2007.

  19. High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003

    SciTech Connect (OSTI)

    Rand, J. A.; Culik, J. S.

    2005-10-01

    The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

  20. Research on stable, high-efficiency amorphous silicon multijunction modules. Annual subcontract report, 1 December 1991--31 October 1992

    SciTech Connect (OSTI)

    Ghosh, M.; DelCueto, J.: Kampas, F.; Xi, J.

    1993-02-01

    This report describes results from the first phase of a three-phase contract for the development of stable, high-efficiency, same-band-gap, amorphous silicon (a-Si) multijunction photovoltaic (PV) modules. The program involved improving the properties of individual layers of semiconductor and non-semiconductor materials and small-area single-junction and multijunction devices, as well as the multijunction modules. The semiconductor materials research was performed on a-Si p, i, and n layers, and on microcrystalline silicon n layers. These were deposited using plasma-enhanced chemical vapor deposition. The non-semiconductor materials studied were tin oxide, for use as a transparent-conducting-oxide (TCO), and zinc oxide, for use as a back reflector and as a buffer layer between the TCO and the semiconductor layers. Tin oxide was deposited using atmospheric-pressure chemical vapor deposition. Zinc oxide was deposited using magnetron sputtering. The research indicated that the major challenge in the fabrication of a-Si multijunction PV modules is the contact between the two p-i-n cells. A structure that has low optical absorption but that also facilitates the recombination of electrons from the first p-i-n structure with holes from the second p-i-n structure is required. Non-semiconductor layers and a-Si semiconductor layers were tested without achieving the desired result.

  1. Effective lifetimes exceeding 300 ?s in gettered p-type epitaxial kerfless silicon for photovoltaics

    E-Print Network [OSTI]

    Powell, D. M.

    We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low ...

  2. Surface Binding and Organization of Sensitizing Dyes on Metal Oxide Single Crystal Surfaces

    SciTech Connect (OSTI)

    Parkinson, Bruce

    2010-06-04

    Even though investigations of dye-sensitized nanocrystalline semiconductors in solar cells has dominated research on dye-sensitized semiconductors over the past two decades. Single crystal electrodes represent far simpler model systems for studying the sensitization process with a continuing train of studies dating back more than forty years. Even today single crystal surfaces prove to be more controlled experimental models for the study of dye-sensitized semiconductors than the nanocrystalline substrates. We analyzed the scientific advances in the model sensitized single crystal systems that preceded the introduction of nanocrystalline semiconductor electrodes. It then follows the single crystal research to the present, illustrating both their striking simplicity of use and clarity of interpretation relative to nanocrystalline electrodes. Researchers have employed many electrochemical, photochemical and scanning probe techniques for studying monolayer quantities of sensitizing dyes at specific crystallographic faces of different semiconductors. These methods include photochronocoulometry, electronic spectroscopy and flash photolysis of dyes at potential-controlled semiconductor electrodes and the use of total internal reflection methods. In addition, we describe the preparation of surfaces of single crystal SnS2 and TiO2 electrodes to serve as reproducible model systems for charge separation at dye sensitized solar cells. This process involves cleaving the SnS2 electrodes and a photoelectrochemical surface treatment for TiO2 that produces clean surfaces for sensitization (as verified by AFM) resulting in near unity yields for electron transfer from the molecular excited dyes into the conduction band.

  3. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    SciTech Connect (OSTI)

    Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne

    2014-06-17

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  4. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    University of Illinois (Urbana, IL)

    2009-04-21

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  5. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Sun, Yugang (Naperville, IL); Menard, Etienne (Durham, NC)

    2012-06-12

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  6. Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  7. Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  8. Electrodynamic Properties of Single-Crystal and Thin-Film Strontium Titanate

    SciTech Connect (OSTI)

    Findikoglu, A.T.; Jia, Q.; Reagor, D.W.; Kwon, C.; Rasmussen, K.O.

    1999-05-13

    The authors present a comparative study of broadband electrodynamic properties of coplanar waveguides made from nonlinear dielectric single-crystal and thin-film SrTiO{sub 3} (STO) with high-temperature superconducting thin-film YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} electrodes. The waveguides that use single-crystal STO exhibit a monotonic increase in refractive index, dielectric nonlinearity, and dissipation with decreasing temperature (from 80 K to 20 K), whereas those based on thin-film STO show similar but weaker effects with increasing temperature. Under dc bias, both types of waveguides show reduced refractive index, but dissipation increases in the case of single-crystal STO, while it decreases in the case of STO thin-films.

  9. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2008-09-01

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  10. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

    DOE Patents [OSTI]

    Charache, Greg W. (Clifton Park, NY); Baldasaro, Paul F. (Clifton Park, NY); Nichols, Greg J. (Burnt Hills, NY)

    1998-01-01

    A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eVsingle crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers.

  11. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2005-11-01

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  12. Performance of 3-Sun Mirror Modules on Sun Tracking Carousels on Flat Roof Buildings

    SciTech Connect (OSTI)

    Fraas, Dr. Lewis; Avery, James E.; Minkin, Leonid M; Maxey, L Curt; Gehl, Anthony C; Hurt, Rick A; Boehm, Robert F

    2008-01-01

    Commercial buildings represent a near term market for cost competitive solar electric power provided installation costs and solar photovoltaic module costs can be reduced. JX Crystals has developed a carousel sun tracker that is prefabricated and can easily be deployed on building flat roof tops without roof penetration. JX Crystals is also developing 3-sun PV mirror modules where less expensive mirrors are substituted for two-thirds of the expensive single crystal silicon solar cell surface area. Carousels each with four 3-sun modules have been set up at two sites, specifically at Oak Ridge National Lab and at the University of Nevada in Las Vegas. The test results for these systems are presented.

  13. Transport and superconducting properties of RNi2B2C (R=Y, Lu) single crystals 

    E-Print Network [OSTI]

    Rathnayaka, KDD; Bhatnagar, AK; Parasiris, A.; Naugle, Donald G.

    1997-01-01

    linearly with temperature near room temperature (RT) but shows nearly quadratic behavior in temperature at low temperatures. The YNi2B2C and LuNi2B2C single-crystal samples exhibit large transverse magnetoresistance (approximate to 6-8% at 45 kOe) in the ab...

  14. Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire

    E-Print Network [OSTI]

    Boyer, Edmond

    Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films 2004, there has been an increasing effort in developing efficient methods for preparing graphene graphene can be prepared, which is favorable for the achievement of high quality graphene; it is also known

  15. Irradiated cubic single crystal SiC as a high temperature sensor Alex A. Volinsky

    E-Print Network [OSTI]

    Volinsky, Alex A.

    Irradiated cubic single crystal SiC as a high temperature sensor Alex A. Volinsky University the temperature of irradiation. Based on this effect the original technology of maximum temperature measurement on the phenomenon of SiC crystal lattice expansion as a result of irradiation [3] and consequently relieving

  16. Alcohol chemical vapor deposition growth of millimeter-sized single-crystal of graphene

    E-Print Network [OSTI]

    Maruyama, Shigeo

    Alcohol chemical vapor deposition growth of millimeter-sized single-crystal of graphene Sungjin Kim@photon,t,u-tokyo.ac.jp Abstract: The growth of large-sized single crystalline graphene with mono layer is necessary for large-scale integration of graphene devices. Ethanol as a precursor has proven effective in the chemical vapor deposition

  17. Thermodynamics of strained vanadium dioxide single crystals Yijia Gu,1,a

    E-Print Network [OSTI]

    Wu, Junqiao

    Thermodynamics of strained vanadium dioxide single crystals Yijia Gu,1,a Jinbo Cao,2 Junqiao Wu,2 condition plays an important role. To investigate the strain contribution, a phenomenological thermodynamic films. In order to control and manipulate the MIT, it is necessary to understand the thermodynamics

  18. Orientation dependence of electromechanical properties of relaxor based ferroelectric single crystals

    E-Print Network [OSTI]

    Cao, Wenwu

    Orientation dependence of electromechanical properties of relaxor based ferroelectric single of electromechan- ical properties of relaxor based ferroelectric single crystals Pb(Zn1/3Nb2/3)O3­(6­7)%PbTiO3 that the enhanced electromechanical performance is not limited to [001]c poled crystals. Viehland et al. have found

  19. Effective symmetry and physical properties of twinned perovskite ferroelectric single crystals

    E-Print Network [OSTI]

    Cao, Wenwu

    Effective symmetry and physical properties of twinned perovskite ferroelectric single crystals Jirí properties of twinned ferroelectric crystals with perovskite structure were analyzed. The twins or twinbands perovskite structure. When a single fer- roelectric crystal is poled along [001] of the cubic coor- dinates

  20. Chemical Vapor Deposition Growth of 5 mm Hexagonal Single-Crystal Graphene from Ethanol

    E-Print Network [OSTI]

    Maruyama, Shigeo

    Chemical Vapor Deposition Growth of 5 mm Hexagonal Single-Crystal Graphene from Ethanol Xiao Chen1 as large as 5 mm can be synthesized from ethanol via chemical vapor deposition (CVD). Key conditions for the successful reduction in nucleation density are extremely low partial pressure of ethanol vapor and pre

  1. Point defects and high temperature creep of NiO single crystals (*) J. Cabrera-Cano

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    durations between 1 h and 18 h have been used, depending on temperature creep test, with no influence on mL-119 Point defects and high temperature creep of NiO single crystals (*) J. Cabrera MPa-150 MPa. Oxygen partial pressures were varied between 10-5 atm. and air. The steady state creep

  2. Deformation by dissolution and plastic flow of a single crystal sodium chloride indenter: An experimental study under the confocal

    E-Print Network [OSTI]

    Einat, Aharonov

    Deformation by dissolution and plastic flow of a single crystal sodium chloride indenter. H. Scholz (2008), Deformation by dissolution and plastic flow of a single crystal sodium chloride is undercutting dissolution that reduces the area of the contact, and the second is probably plastic flow

  3. Dislocation-Source Shutdown and the Plastic Behavior of Single-Crystal Micropillars K. W. Schwarz,2

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Dislocation-Source Shutdown and the Plastic Behavior of Single-Crystal Micropillars H. Tang,1 K. W to study the stress-strain response of single-crystal micropillars containing initial dislocation networks, when such networks are loaded, they exhibit periods of plastic deformation, caused by the operation

  4. SPATIAL AND DIRECTIONAL DISTRIBUTION OF CRACKS IN SILICON PV MODULES AFTER UNIFORM MECHANICAL LOADS

    E-Print Network [OSTI]

    Sarah Kajari-Schröder, Iris Kunze, Ulrich Eitner and Marc Köntges Institute for Solar Energy Research photovoltaic modules are subjected to a variety of mechanical loads. During the manufacturing of the module, materials with different thermal expansion coefficients are bonded (e.g. soldering, lamination). This leads

  5. Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo bandwidth have been demonstrated [4]. 2. Quantum well design Ge is an indirect band gap material, but it has. In order to have good quantum confinement, SiGe barriers are used since Si and Ge have a very high direct

  6. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2006-08-01

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  7. Fergusonite-type CeNbO{sub 4+?}: Single crystal growth, symmetry revision and conductivity

    SciTech Connect (OSTI)

    Bayliss, Ryan D. [Department of Materials, Imperial College London, Prince Consort Road, London, SW7 2BP (United Kingdom); Pramana, Stevin S.; An, Tao; Wei, Fengxia; Kloc, Christian L. [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore); White, Andrew J.P. [Chemical Crystallography Laboratory, Department of Chemistry, Imperial College London, Exhibition Road, London, SW7 2AZ (United Kingdom); Skinner, Stephen J. [Department of Materials, Imperial College London, Prince Consort Road, London, SW7 2BP (United Kingdom); White, Timothy J. [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore); Baikie, Tom, E-mail: tbaikie@ntu.edu.sg [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore)

    2013-08-15

    Large fergusonite-type (ABO{sub 4}, A=Ce, B=Nb) oxide crystals, a prototype electrolyte composition for solid oxide fuel cells (SOFC), were prepared for the first time in a floating zone mirror furnace under air or argon atmospheres. While CeNbO{sub 4} grown in air contained CeNbO{sub 4.08} as a minor impurity that compromised structural analysis, the argon atmosphere yielded a single phase crystal of monoclinic CeNbO{sub 4}, as confirmed by selected area electron diffraction, powder and single crystal X-ray diffraction. The structure was determined in the standard space group setting C12/c1 (No. 15), rather than the commonly adopted I12/a1. AC impedance spectroscopy conducted under argon found that stoichiometric CeNbO{sub 4} single crystals showed lower conductivity compared to CeNbO{sub 4+?} confirming interstitial oxygen can penetrate through fergusonite and is responsible for the higher conductivity associated with these oxides. - Graphical abstract: Large fergusonite-type CeNbO{sub 4} crystals were prepared for the first time in a floating zone mirror furnace. Crystal growth in an argon atmosphere yielded a single phase monoclinic CeNbO4, as confirmed by selected area electron diffraction, powder and single crystal X-ray diffraction. The structure was determined in the standard space group setting C12/c1 (No. 15), rather than the commonly adopted I12/a1. AC impedance spectroscopy found CeNbO{sub 4} single crystals showed lower conductivity compared to CeNbO{sub 4+?} confirming interstitial oxygen can penetrate through fergusonite and is responsible for the higher conductivity associated with these oxides. Highlights: • Preparation of single crystals of CeNbO{sub 4} using a floating zone mirror furnace. • Correction to the crystal symmetry of the monoclinic form of CeNbO{sub 4}. • Report the conductivity of a single crystal of CeNbO{sub 4}.

  8. Enhancement of Thermoelectric Properties by Modulation-Doping in Silicon Germanium Alloy Nanocomposites

    E-Print Network [OSTI]

    Yu, Bo

    Modulation-doping was theoretically proposed and experimentally proved to be effective in increasing the power factor of nanocomposites (Si[subscript 80]Ge[subscript 20])[subscript 70](Si[subscript 100]B[subscript 5])[subscript ...

  9. Polycrystalline silicon resistor trimming by laser annealing 

    E-Print Network [OSTI]

    Crowley, Robert Terrence

    1989-01-01

    . ~ The single crystal band structure of silicon is applicable inside each grain. ~ Carrier trapping sites exist at the grain boundary with an area density of qq cm . These traps are filled with a density of n, cm ~ The traps are monovalent and located..., and (b) Kelvin resistors. luminum Top oxide Polysilicon Initial oxide ubstrate 26 Fig. 7. Cross sectional view of test cell. an oxidized silicon wafer. The polysilicon was oxidized for passivation, and contact windows were etched for the metal...

  10. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    DOE Patents [OSTI]

    Vertes, Akos (Reston, VA); Walker, Bennett N. (Washington, DC)

    2012-02-07

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  11. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    DOE Patents [OSTI]

    Vertes, Akos; Walker, Bennett N.

    2013-09-10

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  12. Investigation on crystalline perfection, mechanical, piezoelectric and ferroelectric properties of L-tartaric acid single crystal

    SciTech Connect (OSTI)

    Murugan, G. Senthil, E-mail: nanosen@gmail.com; Ramasamy, P., E-mail: nanosen@gmail.com [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam, Tamilnadu - 603110 (India)

    2014-04-24

    Polar organic nonlinear optical material, L-tartaric acid single crystals have been grown from slow evaporation solution growth technique. Single crystal X-ray diffraction study indicates that the grown crystal crystallized in monoclinic system with space group P2{sub 1}. Crystalline perfection of the crystal has been evaluated by high resolution X-ray diffraction technique and it reveals that the crystal quality is good and free from structural grain boundaries. Mechanical stability of the crystal has been analyzed by Vickers microhardness measurement and it exhibits reverse indentation size effect. Piezoelectric d{sub 33} co-efficient for the crystal has been examined and its value is 47 pC/N. The ferroelectric behaviour of the crystal was analyzed by polarization-electric field hysteresis loop measurement.

  13. Short communication Single crystal X-ray characterization of the incommensurate mod-

    E-Print Network [OSTI]

    Boyer, Edmond

    in the high Tc superconductor Bi2Sr2CaCu2O8. P.-A. Albouy(1) , R. Moret(1) , M. Potel(2) ,P.Gougeon(2), J, Classification Physics Abstracts 61.50 - 74.70V Since the discovery of the bismuth based high Tc superconductors-cooled to room temperature. Single crystals separated from the melt were found to be superconductors with zero

  14. Precise orientation of single crystals by a simple x-ray diffraction rocking curve method

    SciTech Connect (OSTI)

    Doucette, L.D.; Pereira da Cunha, M.; Lad, R.J.

    2005-03-01

    A simple method has been developed for accurately measuring the crystallographic orientation of a single crystal boule, employing a conventional four-circle x-ray diffraction arrangement in the rocking curve mode which relaxes the need for precise instrument and/or reference alignment. By acquiring a total of eight rocking curve measurements at specific orientations about the specimen azimuth, the absolute miscut angle between a crystal surface and the desired crystallographic plane can be resolved to within {+-}0.01 deg.

  15. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, H.; Lei, H.; Klobes, B.; Warren, J. B.; Hermann, R. P.; Petrovic, C.

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  16. Dependence of dynamic fracture resistance on crack velocity in tungsten: Pt. 1. Single crystals

    SciTech Connect (OSTI)

    Liv, J.M.; Shen, B.W.

    1984-06-01

    The dependence of dynamic fracture resistance on crack propagation velocity on (100) in tungsten has been examined. A correlation is obtained between the measured local crack velocity with the surfac and subsurface deformations. Based on the experimental results on one pass, two passes, and prestrained, electron beam zone refined single crystals, a discussion is given on the slip modes activated at the crack tip, the contributions to the dynamic fracture resistance from dislocations and surface features and from the preexisting deformed microstructure.

  17. Synthesis, Growth, Spectral and Optical Properties of Glycinyl Urea Single Crystal

    SciTech Connect (OSTI)

    Shanthi, N. Theresita [Department of Physics, V. V. College of engineering, Thisaiyanvilai-627 657, Tamilnadu (India); Selvarajan, P. [Department of Physics, Aditanar College of Arts and Science, Tiruchendur-628 216, Tamilnadu (India); Rose, A. S. J. Lucia [Department of Physics, St. Mary's College, Thoothukudi-628 001, Tamilnadu (India)

    2011-10-20

    Single crystals of Glycinyl Urea were grown from aqueous solution by slow evaporation technique at room temperature. The cell parameters of the grown crystals were estimated by Single X-ray diffraction studies. The functional groups present in the grown crystals were ascertained using FTIR spectrum analysis. UV-visible transmittance spectrum was recorded to study the optical transparency of the grown crystal. The non-linear optical property has been tested by Kurtz powder technique.

  18. Enhancing Ionic Conductivity of Bulk Single Crystal Yttria-Stabilized Zirconia by Tailoring Dopant Distribution

    E-Print Network [OSTI]

    Lee, Eunseok; Cai, Wei

    2010-01-01

    We present an ab-initio based kinetic Monte Carlo model for ionic conductivity in single crystal yttria-stabilized zirconia. Ionic interactions are taken into account by combining density functional theory calculations and the cluster expansion method and are found to be essential in reproducing the effective activation energy observed in experiments. The model predicts that the effective energy barrier can be reduced by 0.15-0.25 eV by arranging the dopant ions into a super-lattice.

  19. Enhancing ionic conductivity of bulk single-crystal yttria-stabilized zirconia by tailoring dopant distribution

    SciTech Connect (OSTI)

    Lee, E.; Prinz, F. B.; Cai, W.

    2011-02-11

    We present an ab initio–based kinetic Monte Carlo model for ionic conductivity in single-crystal yttria-stabilized zirconia. Ionic interactions are taken into account by combining density functional theory calculations and the cluster expansion method and are found to be essential in reproducing the effective activation energy observed in experiments. The model predicts that the effective energy barrier can be reduced by 0.15–0.25 eV by arranging the dopant ions into a superlattice.

  20. Recent progress in large grain/single crystal high RRR niobium

    SciTech Connect (OSTI)

    Ganapati Rao Myneni; Peter Kneisel; Tadeu Carneiro; S.R. Agnew; F. Stevie

    2005-11-07

    High RRR bulk niobium Superconducting Radio Frequency (SRF) cavity technology is chosen for the International Linear Collider (ILC). The SRF community was convinced until now that fine grain polycrystalline RRR niobium sheets obtained via forging and cross rolling are essential for forming the SRF Cavities. However, it was recently discovered under a joint Reference Metals Company, Inc., - JLAB CRADA that large grain/single crystal RRR niobium sliced directly from ingots is highly ductile reaching 100 percent elongation. This discovery led to the successful fabrication of several SRF single and/or multi cell structures, formed with sliced RRR discs from the ingots, operating at 2.3, 1.5 and 1.3 GHz. This new exciting development is expected to offer high performance accelerator structures not only at reduced costs but also with simpler fabrication and processing conditions. As a result there is a renewed interest in the evaluation and understanding of the large grain and single crystal niobium with respect to their mechanical & physical properties as well as the oxidation behavior and the influence of impurities such as hydrogen and Ta. In this paper the results of many collaborative studies on large grain and single crystal high RRR niobium between JLAB, Universities and Industry are presented.

  1. Investigations of Residual Stresses and Mechanical Properties of Single Crystal Niobium for SRF Cavities

    SciTech Connect (OSTI)

    Thomas Gnäupel-Herold; Ganapati Rao Myneni; Richard E. Ricker

    2007-06-01

    This work investigates properties of large grained, high purity niobium with respect to the forming of superconducting radio frequency (SRF) cavities from such large grained sheets. The yield stresses were examined using tensile specimens that were essentially single crystals in orientations evenly distributed in the standard projection triangle. No distinct yield anisotropy was found, however, vacuum annealing increased the yield strength by a factor 2..3. The deep drawing forming operation of the half cells raises the issues of elastic shape changes after the release of the forming tool (springback) and residual stresses, both of which are indicated to be negligible. This is a consequence of the low yield stress (< 100 MPa) and the large thickness (compared to typical thicknesses in sheet metal forming). However, the significant anisotropy of the transversal plastic strains after uniaxial deformation points to potentially critical thickness variations for large grained / single crystal half cells, thus raising the issue of controlling grain orientation or using single crystal sheet material.

  2. Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Paulauskas, I. E.; Jellison, G. E.; Boatner, L. A.; Brown, G. M.

    2011-01-01

    The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with themore »significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.« less

  3. Cubic Single Crystal Representations in Classical and Size-dependent Couple Stress Elasticity

    E-Print Network [OSTI]

    Dipanshu Bansal; Gary F. Dargush; Amjad J. Aref; Ali R. Hadjesfandiari

    2015-09-27

    Beginning with Cosserat theory in the early 20th century, there have been several different formulations for size-dependent elastic response. In this paper, we concentrate on the application of classical Cauchy theory and the recent parsimonious consistent couple stress theory to model a homogeneous linear elastic solid, exemplified by a pure single crystal with cubic structure. The focus is on an examination of elastodynamic response based upon wave velocities from ultrasonic excitation and phonon dispersion curves, along with adiabatic bulk moduli measurements. In particular, we consider in detail elastic parameter estimation within classical elasticity and consistent couple stress theory for four different cubic single crystals (NaCl, KCl, Cu, CuZn). The classical theory requires the estimation of three independent material parameters, while only one additional parameter relating skew-symmetric mean curvature to skew-symmetric couple-stress is needed for the size-dependent consistent couple stress theory. This additional parameter can be defined for cubic crystals in terms of a material length scale, which is found to be on the order of tens of microns for the four materials studied here. Furthermore, a detailed statistical investigation provides strong to very strong evidence that couple stress theory is superior to classical Cauchy elasticity for representing the wave velocities and adiabatic bulk moduli for all four single crystals.

  4. Development of large Grain/Single Crystal Niobium Cavity Technology at Jefferson Lab

    SciTech Connect (OSTI)

    Peter Kneisel; J. Sekutowicz; T. Carneiro; G. Ciovati

    2006-10-31

    Approximately two years ago we started to develop high performance niobium accelerating cavities based on large grain or single crystal high purity niobium. We have fabricated and tested 15 single cell cavities of various shapes and frequencies between 1300 MHz and 2300 MHz using material from a total of 9 different very large grain niobium ingots from four niobium suppliers. The materials differed not only in grain sizes, but also in RRR ? value and in the amount of Ta contained in the material. In one ingot supplied by CBMM the central grain exceeded 7 inches in diameter and this was used to fabricate two 2.2 GHz cavities. A single crystal 1300 MHz mono-cell cavity was also produced at DESY by rolling out a single crystal to the size required for this cavity. It was sent to Jlab for surface treatment and testing. In addition, we have fabricated three 7-cell cavities: two of the Jlab high gradient (HG) shape and one of the ILC Low Loss shape. Two 9-cell TESLA shape cavities are presently in fabrication at Jlab and are close to completion.

  5. Single crystal neutron diffraction study of the magnetic structure of TmNi{sub 2}B{sub 2}C

    SciTech Connect (OSTI)

    Sternlieb, B.; Shapiro, S.; Stassis, C.; Goldman, A.I.; Canfield, P.

    1997-02-01

    Neutron diffraction techniques have been used to study the magnetic structure of single crystals of the magnetic superconductor (T{sub c} {congruent} 11K) TmNi{sub 2}B{sub 2}C. We find that below approximately 1.5K the magnetic moments order in an incommensurate spin wave with propagation vector q{sub m} = q{sub m} (a* +b*) (or q{sub m} = q{sub m} (a* + b*)) with q{sub m} = 0.094 {+-} 0.001. The spin wave is transverse with the moments aligned along the c-axis, and the observation of relatively intense higher order harmonics shows that the modulation is not purely sinusoidal but considerably squared. This incommensurate magnetic structure, which coexists with superconductivity below T{sub N} {congruent} 1.5K, is quite different from those observed in the magnetic superconductors HoNi{sub 2}B{sub 2}C and ErNi{sub 2}B{sub 2}C. The origin of diffraction peaks observed in scans parallel to a* is briefly discussed.

  6. Electrical and mechanical studies of high purity aluminum single crystals at 4.2 K under cyclic strain 

    E-Print Network [OSTI]

    Zou, Hong

    1995-01-01

    The objective of this research is to investigate the effects of orientation on strain hardening and resistivity degradation in high purity aluminum single crystals resulting from uniaxial cyclic strain at 4.2 K. Aluminum crystals with various...

  7. Millimeter size single crystals of superconducting YBa.sub.2 Cu.sub.3 O.sub .

    DOE Patents [OSTI]

    Damento, Michael A. (Ames, IA); Gschneidner, Jr., Karl A. (Ames, IA)

    1989-04-25

    A method of growing large, up to 1 mm size single crystals of superconducting YBa.sub.2 Cu.sub.3 O.sub.x, wherein x equals from 6.5 to 7.2.

  8. Millimeter size single crystals of superconducting YBa[sub 2]Cu[sub 3]O[sub x

    DOE Patents [OSTI]

    Damento, M.A.; Gschneidner, K.A. Jr.

    1989-04-25

    A method of growing large, up to 1 mm size single crystals of superconducting YBa[sub 2]Cu[sub 3]O[sub x], wherein x equals from 6.5 to 7.2 is disclosed.

  9. Irradiation damage of single crystal, coarse-grained, and nanograined copper under helium bombardment at 450 °C

    E-Print Network [OSTI]

    Han, Weizhong

    The irradiation damage behaviors of single crystal (SC), coarse-grained (CG), and nanograined (NG) copper (Cu) films were investigated under Helium (He) ion implantation at 450 °C with different ion fluences. In irradiated ...

  10. In-Situ Measurement of Crystalline Silicon Modules Undergoing Potential-Induced Degradation in Damp Heat Stress Testing for Estimation of Low-Light Power Performance

    SciTech Connect (OSTI)

    Hacke, P.; Terwilliger, K.; Kurtz, S.

    2013-08-01

    The extent of potential-induced degradation of crystalline silicon modules in an environmental chamber is estimated using in-situ dark I-V measurements and applying superposition analysis. The dark I-V curves are shown to correctly give the module power performance at 200, 600 and 1,000 W/m2 irradiance conditions, as verified with a solar simulator. The onset of degradation measured in low light in relation to that under one sun irradiance can be clearly seen in the module design examined; the time to 5% relative degradation measured in low light (200 W/m2) was 28% less than that of full sun (1,000 W/m2 irradiance). The power of modules undergoing potential-induced degradation can therefore be characterized in the chamber, facilitating statistical analyses and lifetime forecasting.

  11. In situ atomic-scale imaging of electrochemical lithiation in silicon

    E-Print Network [OSTI]

    Zhu, Ting

    -dependent mobility of the interfaces. L ithium-ion batteries are increasingly being used as energy storage devicesIn situ atomic-scale imaging of electrochemical lithiation in silicon Xiao Hua Liu1 *, Jiang Wei the dynamic lithiation process of single-crystal silicon with atomic resolution. We observe a sharp interface

  12. Calculations of single crystal elastic constants for yttria partially stabilised zirconia from powder diffraction data

    SciTech Connect (OSTI)

    Lunt, A. J. G. Xie, M. Y.; Baimpas, N.; Korsunsky, A. M.; Zhang, S. Y.; Kabra, S.; Kelleher, J.; Neo, T. K.

    2014-08-07

    Yttria Stabilised Zirconia (YSZ) is a tough, phase-transforming ceramic that finds use in a wide range of commercial applications from dental prostheses to thermal barrier coatings. Micromechanical modelling of phase transformation can deliver reliable predictions in terms of the influence of temperature and stress. However, models must rely on the accurate knowledge of single crystal elastic stiffness constants. Some techniques for elastic stiffness determination are well-established. The most popular of these involve exploiting frequency shifts and phase velocities of acoustic waves. However, the application of these techniques to YSZ can be problematic due to the micro-twinning observed in larger crystals. Here, we propose an alternative approach based on selective elastic strain sampling (e.g., by diffraction) of grain ensembles sharing certain orientation, and the prediction of the same quantities by polycrystalline modelling, for example, the Reuss or Voigt average. The inverse problem arises consisting of adjusting the single crystal stiffness matrix to match the polycrystal predictions to observations. In the present model-matching study, we sought to determine the single crystal stiffness matrix of tetragonal YSZ using the results of time-of-flight neutron diffraction obtained from an in situ compression experiment and Finite Element modelling of the deformation of polycrystalline tetragonal YSZ. The best match between the model predictions and observations was obtained for the optimized stiffness values of C11?=?451, C33?=?302, C44?=?39, C66?=?82, C12?=?240, and C13?=?50 (units: GPa). Considering the significant amount of scatter in the published literature data, our result appears reasonably consistent.

  13. Advances in the growth of alkaline-earth halide single crystals for scintillator detectors

    SciTech Connect (OSTI)

    Boatner, Lynn A; Ramey, Joanne Oxendine; Kolopus, James A; Neal, John S; Cherepy, Nerine; Payne, Stephen A.; Beck, P; Burger, Arnold; Rowe, E; Bhattacharya, P.

    2014-01-01

    Alkaline-earth scintillators such as strontium iodide and other alkaline-earth halides activated with divalent europium represent some of the most efficient and highest energy resolution scintillators for use as gamma-ray detectors in a wide range of applications. These applications include the areas of nuclear nonproliferation, homeland security, the detection of undeclared nuclear material, nuclear physics and materials science, medical diagnostics, space physics, high energy physics, and radiation monitoring systems for first responders, police, and fire/rescue personnel. Recent advances in the growth of large single crystals of these scintillator materials hold the promise of higher crystal yields and significantly lower detector production costs. In the present work, we describe new processing protocols that, when combined with our molten salt filtration methods, have led to advances in achieving a significant reduction of cracking effects during the growth of single crystals of SrI2:Eu2+. In particular, we have found that extended pumping on the molten crystal-growth charge under vacuum for time periods extending up to 48 hours is generally beneficial in compensating for variations in the alkaline-earth halide purity and stoichiometry of the materials as initially supplied by commercial sources. These melt-pumping and processing techniques are now being applied to the purification of CaI2:Eu2+ and some mixed-anion europium-doped alkaline-earth halides prior to single-crystal growth by means of the vertical Bridgman technique. The results of initial studies of the effects of aliovalent doping of SrI2:Eu2+ on the scintillation characteristics of this material are also described.

  14. Future advances: Stretchable silicon-based electronics http://www.whatistheword.com/story/SciTech_418.html 1 of 1 12/21/2005 5:57 PM

    E-Print Network [OSTI]

    Rogers, John A.

    Future advances: Stretchable silicon-based electronics http://www.whatistheword.com/story/SciTech_418.html 1 of 1 12/21/2005 5:57 PM Future advances: Stretchable silicon-based electronics WASHINGTON a stretchable form of "single-crystal silicon with micron-sized, wave-like geometries" meaning that future

  15. The effect of interelement dipole coupling in patterned ultrathin single crystal Fe square arrays

    SciTech Connect (OSTI)

    Sun Li; Zhai Ya; Wong Pingkwanj; Zhang Wen; Xu Yongbing; Zou Xiao; Wu Jing; Luo Linqiang; Zhai Hongru

    2011-02-01

    The correlation between the magnetic properties and the interelement separation in patterned arrays of ultrathin single crystal Fe films of 12 monolayers (ML) grown on GaAs(100) has been studied. The critical condition to form single domain remanent states in the square elements was found to be 10 {mu}m in size and 20 {mu}m for the interelement separation. The coercivity was also found to increase with the increasing interelement separation in the patterned arrays. These results are attributed to the competition between the large in-plane uniaxial anisotropy, the demagnetizing field, and interelement dipole coupling as determined semiqualitatively by the ferromagnetic resonance measurements.

  16. Single crystal growth and characterization of ilmenite, FeTiO?, for electronic applications 

    E-Print Network [OSTI]

    Gries, Brian Leonard

    1988-01-01

    unit cell (Figure1) with the corundum structure (AI203) and is similar to the perovskite structure represented by ABoa (1, 6). This structure consists of alternating layers of Fe2+ and Ti4+ iona separated by hexagonally stacked layers of oxygen ions... as a source of raw materials and possibly as a source of semiconductor materials for a lunar base. 44 REFERENCES 1. R. K. Pandey and B. A. Baird, Single Crystal Growth and Characterization of Fe-Ti- Oxide Compounds, Proceedings of NASA Symposium...

  17. Electronic band structure imaging of three layer twisted graphene on single crystal Cu(111)

    SciTech Connect (OSTI)

    Marquez Velasco, J.; Department of Physics, National Technical University of Athens, Athens ; Kelaidis, N.; Xenogiannopoulou, E.; Tsoutsou, D.; Tsipas, P.; Speliotis, Th.; Pilatos, G.; Likodimos, V.; Falaras, P.; Dimoulas, A.; Raptis, Y. S.

    2013-11-18

    Few layer graphene (FLG) is grown on single crystal Cu(111) by Chemical Vapor Deposition, and the electronic valence band structure is imaged by Angle-Resolved Photo-Emission Spectroscopy. It is found that graphene essentially grows polycrystalline. Three nearly ideal Dirac cones are observed along the Cu ?{sup ¯}K{sup ¯} direction in k-space, attributed to the presence of ?4° twisted three layer graphene with negligible interlayer coupling. The number of layers and the stacking order are compatible with Raman data analysis demonstrating the complementarity of the two techniques for a more accurate characterization of FLG.

  18. Comparative study of broadband electrodynamic properties of single-crystal and thin-film strontium titanate

    SciTech Connect (OSTI)

    Findikoglu, A. T.; Jia, Q. X.; Kwon, C.; Reagor, D. W.; Kaduchak, G.; Rasmussen, K. Oe.; Bishop, A. R.

    1999-12-27

    We have used a coplanar waveguide structure to study broadband electrodynamic properties of single-crystal and thin-film strontium titanate. We have incorporated both time- and frequency-domain measurements to determine small-signal effective refractive index and loss tangent as functions of frequency (up to 4 GHz), dc bias (up to 10{sup 6} V/m), and cryogenic temperature (17 and 60 K). The large-signal impulse response of the devices and the associated phenomenological nonlinear wave equation illustrate how dissipation and nonlinearity combine to produce the overall response in the large-signal regime. (c) 1999 American Institute of Physics.

  19. Chaotic magnetization dynamics in single-crystal thin-film structures

    SciTech Connect (OSTI)

    Shutyi, A. M., E-mail: shuty@mail.ru; Sementsov, D. I. [Ulyanovsk State University (Russian Federation)

    2009-01-15

    The nonlinear dynamics of homogeneously precessing magnetization in perpendicularly magnetized single-crystal films has been investigated in a wide range of ac field frequencies on the basis of a numerical solution to the Landau-Lifshitz equation and construction of the spectrum of Lyapunov exponents. The conditions for implementing and specific features of chaotic dynamic modes are revealed for films of three basic crystallographic orientations: (100), (110), and (111). It is shown that chaotic precession modes can be controlled using external magnetic fields. Time analogs of the Poincare section of chaotic mode trajectories are considered.

  20. Metal oxide superconducting powder comprised of flake-like single crystal particles

    DOE Patents [OSTI]

    Capone, D.W.; Dusek, J.

    1994-10-18

    Powder of a ceramic superconducting material is synthesized such that each particle of the powder is a single crystal having a flake-like, nonsymmetric morphology such that the c-axis is aligned parallel to the short dimension of the flake. Nonflake powder is synthesized by the normal methods and is pressed into pellets or other shapes and fired for excessive times to produce a coarse grained structure. The fired products are then crushed and ground producing the flake-like powder particles which exhibit superconducting characteristics when aligned with the crystal lattice. 3 figs.

  1. Giant increase in critical current density of KxFe2-ySe? single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lei, Hechang; Petrovic, C.

    2011-12-28

    The critical current density Jabc of KxFe2-ySe? single crystals can be enhanced by more than one order of magnitude, up to ~2.1×10? A/cm² by the post annealing and quenching technique. A scaling analysis reveals the universal behavior of the normalized pinning force as a function of the reduced field for all temperatures, indicating the presence of a single vortex pinning mechanism. The main pinning sources are three-dimensional (3D) point-like normal cores. The dominant vortex interaction with pinning centers is via spatial variations in critical temperature Tc (“?Tc pinning”).

  2. Creep property and microstructure evolution of a nickel-base single crystal superalloy in [011] orientation

    SciTech Connect (OSTI)

    Han, G.M., E-mail: gmhan@imr.ac.cn; Yu, J.J.; Hu, Z.Q.; Sun, X.F.

    2013-12-15

    The creep property and microstructure evolution of a single crystal superalloy with [011] orientation were investigated at the temperatures of 700 °C, 900 °C and 1040 °C. It is shown that there exist stages of primary, steady-state, and tertiary creep under the lower temperature 700 °C. As the temperature increases to high temperatures of 900 °C and 1040 °C, steady-state creep stage is reduced or disappears and the shape of creep curves is dominated by an extensive tertiary stage. The minimum creep strain rate exhibits power law dependence on the applied stress; the stress exponents at 700 °C, 900 °C and 1040 °C are 28, 13 and 6.5, respectively. Microstructure observation shows that the morphologies of ?? phase almost keep original shape at the lower temperature 700 °C and high applied stress. With the increasing creep temperature, ?? precipitates tend to link together and form lamellar structure at an angle of 45° inclined to the applied stress. Transmission electron microscopy (TEM) investigations reveal that multiple < 110 > (111) slip systems gliding in the matrix channels and shearing ?? precipitates by stacking faults or bending dislocation pairs are the main deformation mechanism at the lower temperature of 700 °C. At the high temperatures of 900 °C and 1040 °C, dislocation networks are formed at ?/?? interfaces and the ?? rafts are sheared by dislocation pairs. - Highlights: • Creep properties of < 011 >-oriented single crystal superalloys were investigated. • ?? phases become rafting at an angle of 45° inclined to the applied stress. • Creep deformation mechanisms depend on temperature and stress.

  3. Diffraction Profiles of Elasticity Bent Single Crystals with Constant Strain Gradients

    SciTech Connect (OSTI)

    Yan,H.; Kalenci, O.; Noyan, I.

    2007-01-01

    This work presents a set of equations that can be used to predict the dynamical diffraction profile from a non-transparent single crystal with a constant strain gradient examined in Bragg reflection geometry with a spherical incident X-ray beam. In agreement with previous work, the present analysis predicts two peaks: a primary diffraction peak, which would have still been observed in the absence of the strain gradient and which exits the specimen surface at the intersection point of the incident beam with the sample surface, and a secondary (mirage) peak, caused by the deflection of the wavefield within the material, which exits the specimen surface further from this intersection point. The integrated intensity of the mirage peak increases with increasing strain gradient, while its separation from the primary reflection peak decreases. The directions of the rays forming the mirage peak are parallel to those forming the primary diffraction peak. However, their spatial displacement might cause (fictitious) angular shifts in diffractometers equipped with area detectors or slit optics. The analysis results are compared with experimental data from an Si single-crystal strip bent in cantilever configuration, and the implications of the mirage peak for Laue analysis and high-precision diffraction measurements are discussed.

  4. Flux growth and magnetic properties of FeVO{sub 4} single crystals

    SciTech Connect (OSTI)

    He Zhangzhen Yamaura, Jun-Ichi; Ueda, Yutaka

    2008-09-15

    FeVO{sub 4} (I) single crystals are grown by the flux method using V{sub 2}O{sub 5} as the self-flux. The grown crystals exhibit a characteristic morphology with natural facets. The quality of the crystals is confirmed by X-ray diffraction and EPMA techniques. Magnetic properties are investigated by means of magnetic susceptibility, magnetization, and heat capacity measurements. Two magnetic phase transitions are observed at {approx}13 and {approx}20 K. Such unusual magnetic behaviors are suggested to originate from two different Fe ligand environments of octahedral FeO{sub 6} and trigonal bipyramidal FeO{sub 5} in a six-column doubly bent chain. - Graphical abstract: FeVO{sub 4} (I) single crystals are grown by the flux method using V{sub 2}O{sub 5} as the self-flux. Magnetic properties are investigated by means of magnetic susceptibility, magnetization, and heat capacity measurements, showing two magnetic phase transitions at {approx}13 and {approx}20 K.

  5. Cooperative Island Growth of Large Area Single-Crystal Graphene by Chemical Vapor Deposition on Cu

    SciTech Connect (OSTI)

    Regmi, Murari [Oak Ridge National Laboratory (ORNL); Rouleau, Christopher [Oak Ridge National Laboratory (ORNL); Puretzky, Alexander A [ORNL; Ivanov, Ilia N [ORNL; Geohegan, David B [ORNL; Chen, Jihua [ORNL; Eastman, Jeffrey [Argonne National Laboratory (ANL); Eres, Gyula [ORNL

    2014-01-01

    We describe a two-step approach for suppressing nucleation of graphene on Cu using chemical vapor deposition. In the first step, as received Cu foils are oxidized in air at temperatures up to 500 C to remove surface impurities and to induce the regrowth of Cu grains during subsequent annealing in H2 flow at 1040 C prior to graphene growth. In the second step, transient reactant cooling is performed by using a brief Ar pulse at the onset of growth to induce collisional deactivation of the carbon growth species. The combination of these two steps results in a three orders of magnitude reduction in the graphene nucleation density, enabling the growth of millimeter-size single crystal graphene grains. A kinetic model shows that suppressing nucleation promotes a cooperative island growth mode that favors the formation of large area single crystal graphene, and it is accompanied by a roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random nucleation growth.

  6. The local structure and ferromagnetism in Fe-implanted SrTiO? single crystals

    SciTech Connect (OSTI)

    Lobacheva, O. Chavarha, M.; Yiu, Y. M.; Sham, T. K.; Goncharova, L. V.

    2014-07-07

    We report a connection between the local structure of low-level Fe impurities and vacancies as the cause of ferromagnetic behavior observed in strontium titanate single crystals (STO), which were implanted with Fe and Si ions at different doses then annealed in oxygen. The effects of Fe doping and post-implantation annealing of STO were studied by X-ray Absorption Near Edge Structure (XANES) spectroscopy and Superconducting Quantum Interference Device magnetometry. XANES spectra for Fe and Ti K- and L-edge reveal the changes in the local environment of Fe and Ti following the implantation and annealing steps. The annealing in oxygen atmosphere partially healed implantation damages and changed the oxidation state of the implanted iron from metallic Fe? to Fe²?/Fe³? oxide. The STO single crystals were weak ferromagnets prior to implantation. The maximum saturation moment was obtained after our highest implantation dose of 2×10¹? Fe atom/cm², which could be correlated with the metallic Fe? phases in addition to the presence of O/Ti vacancies. After recrystallization annealing, the ferromagnetic response disappears. Iron oxide phases with Fe²? and Fe³? corresponding to this regime were identified and confirmed by calculations using Real Space Multiple Scattering program (FEFF9).

  7. In-situ TEM observation of dislocation evolution in Kr-irradiated UO2 single crystal

    SciTech Connect (OSTI)

    Lingfeng He; Mahima Gupta; Clarissa A. Yablinsky; Jian Gan; Marquis A. Kirk; Xian-Ming Bai; Janne Pakarinen; Todd R. Allen

    2013-11-01

    In-situ transmission electron microscopy (TEM) observation of UO2 single crystal irradiated with Kr ions at high temperatures was conducted to understand the dislocation evolution due to high-energy radiation. The dislocation evolution in UO2 single crystal is shown to occur as nucleation and growth of dislocation loops at low-irradiation doses, followed by transformation to extended dislocation segments and networks at high doses, as well as shrinkage and annihilation of some loops and dislocations due to high temperature annealing. Generally the trends of dislocation evolution in UO2 are similar under Kr irradiation at different ion energies and temperatures (150 keV at 600 degrees C and 1 MeV at 800 degrees C) used in this work, although the specific dislocation loop size and density are quite different. Interstitial-type dislocation loops with Burgers vector along <110> were observed in the Kr-irradiated UO2.The irradiated specimens were denuded of dislocation loops near the surface.

  8. Physical model construction for electrical anisotropy of single crystal zinc oxide micro/nanobelt using finite element method

    SciTech Connect (OSTI)

    Yu, Guangbin [The Higher Educational Key Laboratory for Measuring and Control Technology and Instrumentations of Heilongjiang Province, Harbin University of Science and Technology, Harbin 150080 (China); Tang, Chaolong [Department of Metallurgical and Materials Engineering, Center for Materials for Information Technology (MINT), University of Alabama, Tuscaloosa, Alabama 35487 (United States); Song, Jinhui, E-mail: jhsong@eng.ua.edu, E-mail: wqlu@cigit.ac.cn [The Higher Educational Key Laboratory for Measuring and Control Technology and Instrumentations of Heilongjiang Province, Harbin University of Science and Technology, Harbin 150080 (China); Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714 (China); Department of Metallurgical and Materials Engineering, Center for Materials for Information Technology (MINT), University of Alabama, Tuscaloosa, Alabama 35487 (United States); Lu, Wenqiang, E-mail: jhsong@eng.ua.edu, E-mail: wqlu@cigit.ac.cn [Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714 (China)

    2014-04-14

    Based on conductivity characterization of single crystal zinc oxide (ZnO) micro/nanobelt (MB/NB), we further investigate the physical mechanism of nonlinear intrinsic resistance-length characteristic using finite element method. By taking the same parameters used in experiment, a model of nonlinear anisotropic resistance change with single crystal MB/NB has been deduced, which matched the experiment characterization well. The nonlinear resistance-length comes from the different electron moving speed in various crystal planes. As the direct outcome, crystallography of the anisotropic semiconducting MB/NB has been identified, which could serve as a simple but effective method to identify crystal growth direction of single crystal semiconducting or conductive nanomaterial.

  9. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

    E-Print Network [OSTI]

    Luise Poley; Ingo Bloch; Sam Edwards; Conrad Friedrich; Ingrid Gregor; Heiko Lacker; Simon Pyatt; Laura Rehnisch; Dennis Sperlich; John Wilson

    2015-08-25

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives. Results from electrical tests of first prototype modules constructed using these glues are presented.

  10. Single shot ultrafast dynamic ellipsometry (UDE) of laser-driven shocks in single crystal explosives

    SciTech Connect (OSTI)

    Whitley, Von H; Mcgrane, Shawn D; Moore, David S; Eakins, Dan E; Bolme, Cindy A

    2009-01-01

    We report on the first experiments to measure states in shocked energetic single crystals with dynamic ellipsometry. We demonstrate that these ellipsometric techniques can produce reasonable Hugoniot values using small amounts of crystalline RDX and PETN. Pressures, particle velocities and shock velocities obtained using shocked ellipsometry are comparable to those found using gas-gun flyer plates and molecular dynamics calculations. The adaptation of the technique from uniform thin films of polymers to thick non-perfect crystalline materials was a significant achievement. Correct sample preparation proved to be a crucial component. Through trial and error, we were able to resolve polishing issues, sample quality problems, birefringence effects and mounting difficulties that were not encountered using thin polymer films.

  11. Anisotropic shock sensitivity and detonation temperature of pentaerythritol tetranitrate single crystal

    SciTech Connect (OSTI)

    Yoo, C. S.; Holmes, N. C.; Souers, P. C.; Wu, C. J.; Ree, F. H.; Dick, J. J.

    2000-07-01

    Shock temperatures of pentaerythritol tetranitrate (PETN) single crystals have been measured by using a nanosecond time-resolved spectropyrometric system operated at six discrete wavelengths between 350 and 700 nm. The results show that the shock sensitivity of PETN is strongly dependent on the crystal orientation: Sensitive along the shock propagation normal to the (110) plane, but highly insensitive normal to the (100) plane. The detonation temperature of PETN is, however, independent from the crystal orientation and is determined to be 4140 ({+-}70) K. The time-resolved data yielding the detonation velocity 8.28 ({+-}0.10) mm/{mu}s can be interpreted in the context of a modified thermal explosion model. (c) 2000 American Institute of Physics.

  12. Summary Report of Summer Work: High Purity Single Crystal Growth & Microstructure of Ferritic-Martensitic Steels

    SciTech Connect (OSTI)

    Pestovich, Kimberly Shay

    2015-08-18

    Harnessing the power of the nuclear sciences for national security and to benefit others is one of Los Alamos National Laboratory’s missions. MST-8 focuses on manipulating and studying how the structure, processing, properties, and performance of materials interact at the atomic level under nuclear conditions. Within this group, single crystal scintillators contribute to the safety and reliability of weapons, provide global security safeguards, and build on scientific principles that carry over to medical fields for cancer detection. Improved cladding materials made of ferritic-martensitic alloys support the mission of DOE-NE’s Fuel Cycle Research and Development program to close the nuclear fuel cycle, aiming to solve nuclear waste management challenges and thereby increase the performance and safety of current and future reactors.

  13. Fabrication of Fe nanowires on yittrium-stabilized zirconia single crystal substrates by thermal CVD methods

    SciTech Connect (OSTI)

    Kawahito, A.; Yanase, T.; Endo, T.; Nagahama, T.; Shimada, T.

    2015-05-07

    Magnetic nanowires (NWs) are promising as material for use in spintronics and as the precursor of permanent magnets because they have unique properties due to their high aspect ratio. The growth of magnetic Fe whiskers was reported in the 1960s, but the diameter was not on a nanoscale level and the growth mechanism was not fully elucidated. In the present paper, we report the almost vertical growth of Fe NWs on a single crystal yttrium-stabilized zirconia (Y{sub 0.15}Zr{sub 0.85}O{sub 2}) by a thermal CVD method. The NWs show a characteristic taper part on the bottom growing from a trigonal pyramidal nucleus. The taper angle and length can be controlled by changing the growth condition in two steps, which will lead to obtaining uniformly distributed thin Fe NWs for applications.

  14. Photo-transport properties of Pb{sub 2}CrO{sub 5} single crystals

    SciTech Connect (OSTI)

    Mondal, P. S.; Okazaki, R. Taniguchi, H.; Terasaki, I.

    2014-11-21

    We report photo-thermoelectric transport phenomena in Pb{sub 2}CrO{sub 5} single crystals. Without illumination, this material exhibits an insulating behavior characterized by an activation-type temperature variation of the electrical conductivity. The Seebeck coefficient contrastingly shows a crossover from high-temperature insulating to low-temperature metallic behavior, which is attributed to degenerate carriers in a donor level. We have found that under illumination, both the conductivity and the Seebeck coefficient increase in magnitude with increasing photon flux density in the degenerate-conduction regime. This result is difficult to understand within a simple photo-doping effect, which usually leads to a decrease in the Seebeck coefficient under illumination. The observed phenomenon is discussed in terms of a two-carrier contribution to the transport properties.

  15. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Harris Kagan; K.K. Gan; Richard Kass

    2009-03-31

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2013, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  16. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Rainer Wallny

    2012-10-15

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2010, and the LHC upgrades expected in 2015, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed and operational in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  17. Detailed Surface Analysis Of Incremental Centrifugal Barrel Polishing (CBP) Of Single-Crystal Niobium Samples

    SciTech Connect (OSTI)

    Palczewski, Ari D.; Hui Tian; Trofimova, Olga; Reece, Charles E.

    2011-07-01

    We performed Centrifugal Barrel Polishing (CBP) on single crystal niobium samples/coupons housed in a stainless steel sample holder following the polishing recipe developed at Fermi Lab (FNAL) in 2011 \\cite{C. A. Cooper 2011}. Post CBP, the sample coupons were analyzed for surface roughness, crystal composition and structure, and particle contamination. Following the initial analysis each coupon was high pressure rinsed (HRP) and analyzed for the effectiveness of contamination removal. We were able to obtain the mirror like surface finish after the final stage of tumbling, although some defects and embedded particles remained. In addition, standard HPR appears to have little effect on removing embedded particles which remain after each tumbling step, although final polishing media removal was partially affected by standard/extended HPR.

  18. A Systematic Study of the Formation of Nano-Tips on Silicon Thin Films by Excimer Laser Irradiation

    E-Print Network [OSTI]

    Avrutsky, Ivan

    A Systematic Study of the Formation of Nano-Tips on Silicon Thin Films by Excimer Laser Irradiation cone is formed when a single-crystal silicon film on an insulator substrate is irradiated in air of the laser fluence, the film thickness, and the diameter of the irradiated spot. Atomic force microscopy

  19. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect (OSTI)

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  20. PHYSICAL REVIEW B 83, 104511 (2011) Superconducting energy gap in MgCNi3 single crystals: Point-contact spectroscopy

    E-Print Network [OSTI]

    Boyer, Edmond

    2011-01-01

    PHYSICAL REVIEW B 83, 104511 (2011) Superconducting energy gap in MgCNi3 single crystals: Point Center for Superconductivity, Sogang University, Seoul 100-611, Republic of Korea (Received 14 December that a superconducting energy gap is fully open on the whole Fermi surface, in agreement with our previous magnetic

  1. Three-Dimensional (3D) Bicontinuous Hierarchically Porous Mn?O? Single Crystals for High Performance Lithium-Ion Batteries

    E-Print Network [OSTI]

    Huang, Shao-Zhuan; Jin, Jun; Cai, Yi; Li, Yu; Deng, Zhao; Zeng, Jun-Yang; Liu, Jing; Wang, Chao; Hasan, Tawfique; Su, Bao-Lian

    2015-10-06

    Bicontinuous hierarchically porous Mn?O? single crystals (BHP-Mn?O?-SCs) with uniform parallelepiped geometry and tunable sizes have been synthesized and used as anode materials for lithium-ion batteries (LIBs). The monodispersed BHP-Mn?O?-SCs...

  2. Face shear piezoelectric properties of relaxor-PbTiO3 single crystals Shujun Zhang,1,a

    E-Print Network [OSTI]

    Cao, Wenwu

    Face shear piezoelectric properties of relaxor-PbTiO3 single crystals Shujun Zhang,1,a Fei Li,1TiO3 crystals, piezoelectric d36 coefficients were determined to be in the range of 2000­2500 p-frequency-transducer applications. © 2011 American Institute of Physics. doi:10.1063/1.3584851 The excellent electromechanical

  3. Fabrication and optical properties of single-crystal YAG fiber optics Brian.T. Laustsen and James A. Harrington

    E-Print Network [OSTI]

    . In this method a CO2 laser is used to melt the tip of a crystalline source rod and a fiber is pulled upward from reservoir. In one method a high temperature crucible usually made of tungsten is used to contain the meltFabrication and optical properties of single-crystal YAG fiber optics Brian.T. Laustsen and James A

  4. PHYSICAL REVIEW B 83, 052301 (2011) Enhancing ionic conductivity of bulk single-crystal yttria-stabilized zirconia

    E-Print Network [OSTI]

    Cai, Wei

    2011-01-01

    -stabilized zirconia by tailoring dopant distribution Eunseok Lee, Friedrich B. Prinz, and Wei Cai Department in single-crystal yttria- stabilized zirconia. Ionic interactions are taken into account by combining.1103/PhysRevB.83.052301 PACS number(s): 66.30.-h, 82.45.Gj, 82.20.Wt, 82.47.Ed Yttria-stablized zirconia

  5. X-ray Diffraction of Photonic Colloidal Single Crystals Willem L. Vos,*, Mischa Megens, Carlos M. van Kats,, and Peter Bosecke,|

    E-Print Network [OSTI]

    Vos, Willem L.

    X-ray Diffraction of Photonic Colloidal Single Crystals Willem L. Vos,*, Mischa Megens, Carlos M of Bragg peaks of photonic colloidal single crystals by synchrotron small angle X-ray scattering (SAXS). We find that charge-stabilized colloids form face-centered cubic crystals at all densities up to 60 vol

  6. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

    E-Print Network [OSTI]

    Poley, Luise; Edwards, Sam; Friedrich, Conrad; Gregor, Ingrid; Lacker, Heiko; Pyatt, Simon; Rehnisch, Laura; Sperlich, Dennis; Wilson, John

    2015-01-01

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigatio...

  7. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  8. Evaluation of scuffing behavior of single-crystal zirconia ceramic materials.

    SciTech Connect (OSTI)

    Lorenzo-Martin, C.; Ajayi, O. O.; Singh, D.; Routbort, J. L.; Energy Systems

    2007-09-10

    Scuffing, described as sudden catastrophic failure of lubricated sliding surfaces, is usually characterized by a sudden rapid increase in friction, temperature, and noise, and is an important failure mode on sliding surfaces. In metallic materials, scuffing results in severe plastic deformation of surfaces in contact. This study evaluated the scuffing behavior of two variants of zirconia (ZrO{sub 2}) ceramic. Using a block-on-ring contact configuration and unformulated polyalphaolefin (PAO) lubricant, step-load-increase scuffing tests were conducted with single crystals of cubic ZrO{sub 2}-9.5% Y{sub 2}O{sub 3} and tetragonal ZrO{sub 2}-3% Y{sub 2}O{sub 3}. Phenomenological 'scuffing', characterized by a sudden rise in friction coefficient and noise, was observed in the cubic material. For this material, 'scuffing' occurred by sudden fracture at the end of test. The tetragonal material underwent no sudden failure (scuffing). This lack of scuffing is attributed to the sequential operation of three plastic deformation mechanisms: ferroelastic domain switching, tetragonal-to-monoclinic phase transformation, and dislocation slip as the frictional stress and energy dissipation pathway.

  9. Prediction method of basic domain structure in Fe3%Si(110) single crystal with grooved surface

    SciTech Connect (OSTI)

    Iwata, K., E-mail: iwata.24h.keiji@jp.nssmc.com [Advanced Technology Research Laboratories, Nippon Steel and Sumitomo Metal Corporation, Futtsu, Chiba 293-8511 (Japan); Research Institute of Electrical Communication, Tohoku University, Aoba, Sendai 980-8577 (Japan); Fujikura, M. [Yawata R and D Laboratories, Nippon Steel and Sumitomo Metal Corporation, Tobata, Kitakyushu, Fukuoka 804-8501 (Japan); Arai, S. [Steel Research Laboratories, Nippon Steel and Sumitomo Metal Corporation, Futtsu, Chiba 293-8511 (Japan); Ishiyama, K. [Research Institute of Electrical Communication, Tohoku University, Aoba, Sendai 980-8577 (Japan)

    2014-05-07

    This paper proposes the method to accurately predict the 180° basic domain width (D{sub w}) in demagnetized states of the grooved Fe3%Si(110) single crystal with the tilt angle of [001] out of the sheet surface (?). The evaluation of D{sub w} enables the estimation of the anomalous eddy current losses. In this paper, D{sub w} is optimized to minimize the magnetic Gibbs free energy represented by vector potentials using the finite element method and the conjugate gradient method. The ?*-method is adopted to approximate the magnetization relaxation. The stray field energy generated by the magnetic charges occurring on both grooves cross section and sheet surfaces is considered in our proposed method. The validity of the proposed method was confirmed by comparison with the observed D{sub w}. As a result, we could reveal the ? dependence of D{sub w} against the groove depth. Moreover, the theoretical threshold of the domain refinement due to the grooves has been suggested.

  10. Elastic-plastic and phase transition of zinc oxide single crystal under shock compression

    SciTech Connect (OSTI)

    Liu, Xun; Mashimo, Tsutomu Li, Wei; Zhou, Xianming; Sekine, Toshimori

    2015-03-07

    The Hugoniot data for zinc oxide (ZnO) single crystals were measured up to 80?GPa along both the ?112{sup ¯}0? (a-axis) and ?0001? (c-axis) directions using a velocity interferometer system for any reflector and inclined-mirror method combined with a powder gun and two-stage light gas gun. The Hugoniot-elastic limits of ZnO were determined to be 10.5 and 11.5?GPa along the a- and c-axes, respectively. The wurtzite (B4) to rocksalt (B1) phase transition pressures along the a- and c-axes are 12.3 and 14.4?GPa, respectively. Shock velocity (U{sub s}) versus particle velocity (U{sub p}) relation of the final phase is given by the following relationship: U{sub s} (km/s)?=?2.76?+?1.51U{sub p} (km/s). Based on the Debye-Grüneisen model and Birch-Murnaghan equation of state (EOS), we discuss the EOS of the B1 phase ZnO. The bulk modulus (K{sub 0}) and its pressure derivative (K{sub 0}?) are estimated to be K{sub 0}?=?174?GPa and K{sub 0}??=?3.9, respectively.

  11. Laser annealing induced ferromagnetism in SrTiO{sub 3} single crystal

    SciTech Connect (OSTI)

    Rao, S. S., E-mail: ssingam@ncsu.edu; Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Lee, Y. F.; Narayan, J. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Smirnov, A. I. [Department of Chemistry, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-28

    The appearance of ferromagnetic order up to 400?K upon KrF (248?nm) laser irradiation is reported in un-doped SrTiO{sub 3} (STO) single crystal. The high resolution x-ray photo emission spectroscopy (XPS) measurements reveal a strong shift of Sr-, Ti-, and O-related peaks. X-ray diffraction of laser annealed STO does not reveal a signature of either secondary magnetic or amorphous phases. 300?K X-band (?9.543?GHz) angle-dependent electron paramagnetic resonance (EPR) measurements showed no evidence of additional magnetic peaks upon laser irradiation. XPS and EPR data did not provide a strong evidence of Ti{sup 3+} formation upon laser annealing. No differences in the visible 300?K Raman spectra of pristine and laser annealed STO are noticed. Interestingly, the magnetic moment is decreased by almost 10-fold upon oxygen annealing of laser annealed STO, inferring that oxygen vacancies play an important role in establishing the observed ferromagnetism.

  12. Superconductivity and Physical Properties of CaPd2Ge2 Single Crystals

    SciTech Connect (OSTI)

    Anand, V K; Kim, Hyunsoo; Tanatar, Makariy A; Prozorov, Ruslan; Johnston, David C

    2014-10-08

    We present the superconducting and normal state properties of CaPd2Ge2 single crystals investigated by magnetic susceptibility ?, isothermal magnetization M, heat capacity Cp, in-plane electrical resistivity ? and London penetration depth ? versus temperature T and magnetic field H measurements. Bulk superconductivity is inferred from the ?(T) and Cp(T) data. The ?(T) data exhibit metallic behavior and a superconducting transition with Tc onset = 1.98 K and zero resistivity at Tc 0 = 1.67 K. The ?(T) reveals the onset of superconductivity at 2.0 K. For T > 2.0 K, the ?(T) and M(H) are weakly anisotropic paramagnetic with ?ab > ?c. The Cp(T) data confirm the bulk superconductivity below Tc = 1.69(3) K. The superconducting state electronic heat capacity is analyzed within the framework of a single-band ?-model of BCS superconductivity and various normal and superconducting state parameters are estimated. Within the ?-model, the Cp(T) data and the ab plane ?(T) data consistently indicate a moderately anisotropic s-wave gap with ?(0)/kBTc ? 1.6, somewhat smaller than the BCS value of 1.764. The relationship of the heat capacity jump at Tc and the penetration depth measurement to the anisotropy in the s-wave gap is discussed.

  13. Effect of dislocation trapping on deuterium diffusion in deformed, single-crystal Pd

    SciTech Connect (OSTI)

    Heuser, B.J.; King, J.S.

    1998-06-01

    Small-angle neutron scattering (SANS) has been used to characterize deuterium trapping at dislocations in deformed, single-crystal Pd during in situ gas evolution experiments. Two methods of deformation were employed--cold rolling and hydride cycling--which create different dislocation arrangements or substructures in Pd. The reduction of the trapped deuterium concentration at dislocations during evolution was directly monitored with SANS. Exponential decay rates of the trapped concentration were observed for both sample types, as is expected in a bulk diffusion process modified by the dislocation trapping interaction. The deuterium concentration reduction proceeded 1.2 to 1.4 times faster in the cold-rolled sample material than in the cycled material. This is attributed to the presence of a smaller number of dislocation trapping sites in the cold-rolled material. The binding energy of deuterium at dislocations was determined by applying a diffusion-based model. A binding energy of 0.20 eV was found to characterize the trapping interaction in both cold-rolled and hydride-cycled Pd.

  14. Elastic properties of Pd-hydrogen, Pd-deuterium, and Pd-tritium single crystals

    SciTech Connect (OSTI)

    Schwarz, R.B. . E-mail: rxzs@lanl.gov; Bach, H.T.; Harms, U.; Tuggle, D.

    2005-02-01

    We used a resonant-ultrasound-spectroscopy technique to measure the three independent elastic constants of PdH{sub x}, PdD{sub x}, and PdT{sub x} single crystals at 300 K. For 0.1x0.62 our PdH{sub x} crystals are two-phase mixtures of coherent {alpha} and {beta} hydride phases. For increasing x in this range, C{sub 44} decreases monotonically whereas C'=12(C11-C12) has a concave parabolic dependence. This difference is because C' is softened by an anelastic relaxation resulting from acoustic-stress-induced changes in the shape of the coherent lenticular-shape precipitates ({beta}-hydride precipitates in {alpha}-hydride matrix and {alpha}-hydride precipitates in {beta}-hydride matrix). In the {beta}-phase C' and C{sub 44} decrease with increasing hydrogen (or deuterium or tritium) content. Furthermore, C' exhibits a strong isotope effect whereas C{sub 44} does not. This effect is attributed to differences in the excitation of optical phonons in Pd-H, Pd-D and Pd-T.

  15. Oxidation of methanol on single crystal platinum electrodes in alkaline solution

    SciTech Connect (OSTI)

    Tripkovic, A.V.; Marinkovic, N.; Adzic, R.R.

    1995-10-01

    Methanol oxidation has been studied on three low-index single crystal Pt electrodes and four stepped surfaces, vicinal to the (111) and (100) orientations in alkaline solutions. Considering the onset of the reaction, it appears that the activity decreases in the sequence Pt(100), Pt(110) and Pt(111). This can also be inferred from the quasi-steady-state measurements. The current peaks, observed at different potentials, show the highest activity of Pt(111). The steps cause increase of the surface activity, but are prone to a fast poisoning. The reaction involves a formation of a small amount of CO on Pt(100) but a negligible amount on Pt(111). This was inferred from the in situ FTIR measurements. Two different reaction mechanisms were identified for the Pt(111) and Pt(100). The data clearly show that a large difference of the activity of Pt for methanol oxidation in acid and alkaline solutions originates in a smaller or negligible poisoning effects in alkaline solutions.

  16. Growth of single-crystal {alpha}-MnO{sub 2} nanorods on multi-walled carbon nanotubes

    SciTech Connect (OSTI)

    Chen Yong; Liu Chenguang; Liu Chang; Lu Gaoqing; Cheng Huiming

    2007-11-06

    Single-crystal {alpha}-MnO{sub 2} nanorods were grown on multi-walled carbon nanotubes (MWNTs) in H{sub 2}SO{sub 4} aqueous solution. The morphology and microstructure of the composites were examined by transmission electron microscopy, high-resolution transmission electron microscopy (HRTEM), X-ray diffractometry and energy dispersive spectroscopy (EDS). The results show that {alpha}-MnO{sub 2} single-crystal nanorods with a mean diameter of 15 nm were densely grown on the surface of MWNTs. Those MWNTs/MnO{sub 2} composites were used as an electrode material for supercapacitors, and it was found that the supercapacitor performance using MWNTs/MnO{sub 2} composites was improved largely compared to that using pure MWNTs and {alpha}-MnO{sub 2} nanorod mechanically mixed with MWNTs.

  17. One-dimensional SANS employing bent-single crystal optics: Theory and demonstration

    SciTech Connect (OSTI)

    Heuser, B.J.; Popovici, M.; Berliner, R.

    1995-12-31

    A recent small-angle neutron scattering (SANS) instrumentation development at the University of Missouri Research Reactor Center (MURR) using bent, double Si crystal diffraction is presented. Neutron rocking curves of flat single crystals are only a few seconds of arc with correspondingly low integrated intensities. The rocking curve can be significantly broadened if the crystals are bent. However, the phase-space acceptance and emergence windows of two bent crystals in parallel can be matched only if the reflecting planes have different d-spacing. The authors have used a combination of the Si(111) and (220) reflections in the work presented here. The peak intensity of the rocking curve with this configuration was approximately 2.5 {times} 10{sup 5} neutrons per second over a 5 cm{sup 2} area of sample at 1.5 {angstrom}. The rocking curve wings fell sharply (approximately as Q{sup {minus}11}), permitting accurate scattered intensity measurements down to a minimum Q value of 0.005 1/{angstrom} at a Q resolution of 0.003 1/{angstrom}. The technique also offers the possibility of variable resolution without too much difficulty; changes up to a factor of 2 can be made by adjusting the sample-to-analyzer crystal distance, while changes of a factor of 10 can be made by using different Si reflections. Since the incident neutron wavelength can be tuned to the peak of the leakage spectrum, this technique is ideal for low-flux reactors, which otherwise cannot be used for SANS research. The usefulness of one-dimensional SANS is demonstrated by measurements of Portland cement.

  18. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    SciTech Connect (OSTI)

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of charge carriers is known to evolve as the carrier concentration increases, due to the presence of intrinsic disorder in organic semiconductors. Thus, a complementary question is: how does the nature of charge transport change as a function of carrier concentration?

  19. Crystallographic, electronic, thermal, and magnetic properties of single-crystal SrCo2As2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pandey, Abhishek [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Quirinale, D. G. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Jayasekara, W. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Sapkota, A. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Kim, M. G. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Dhaka, R. S. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Lee, Y. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Heitmann, T. W. [Univ. of Missouri, Columbia, MO (United States). Missouri Research Reactor; Stephens, P. W. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Ogloblichev, V. [Russian Academy of Sciences, Urals Div., Ekaterinburg (Russian Federation). Inst. of Metal Physics; Kreyssig, A. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; McQueeney, R. J. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Goldman, A. I. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Kaminski, Adam [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Harmon, B. N. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Furukawa, Y. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Johnston, D. C. [Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy

    2013-07-01

    In tetragonal SrCo2As2 single crystals, inelastic neutron scattering measurements demonstrated that strong stripe-type antiferromagnetic (AFM) correlations occur at a temperature T = 5 K [W. Jayasekara et al., arXiv:1306.5174] that are the same as in the isostructural AFe2As2 (A = Ca, Sr, Ba) parent compounds of high-Tc superconductors. This surprising discovery suggests that SrCo2As2 may also be a good parent compound for high-Tc superconductivity. Here, structural and thermal expansion, electrical resistivity ?, angle-resolved photoemission spectroscopy (ARPES), heat capacity Cp, magnetic susceptibility ?, 75As NMR and neutron diffraction measurements of SrCo2As2 crystals are reported together with LDA band structure calculations that shed further light on this fascinating material. The c-axis thermal expansion coefficient ?c is negative from 7 to 300 K, whereas ?a is positive over this T range. The ?(T) shows metallic character. The ARPES measurements and band theory confirm the metallic character and in addition show the presence of a flat band near the Fermi energy EF. The band calculations exhibit an extremely sharp peak in the density of states D(EF) arising from a flat dx2-y2 band. A comparison of the Sommerfeld coefficient of the electronic specific heat with ?(T ? 0) suggests the presence of strong ferromagnetic itinerant spin correlations which on the basis of the Stoner criterion predicts that SrCo2As2 should be an itinerant ferromagnet, in conflict with the magnetization data. The ?(T) does have a large magnitude, but also exhibits a broad maximum at 115 K suggestive of dynamic short-range AFM spin correlations, in agreement with the neutron scattering data. The measurements show no evidence for any type of phase transition between 1.3 and 300 K and we propose that metallic SrCo2As2 has a gapless quantum spin-liquid ground state.

  20. Tetracene air-gap single-crystal field-effect transistors Yu Xia, Vivek Kalihari, and C. Daniel Frisbiea

    E-Print Network [OSTI]

    Rogers, John A.

    Tetracene air-gap single-crystal field-effect transistors Yu Xia, Vivek Kalihari, and C. Daniel FETs utilizing an air or vacuum gap as the gate dielectric. The linear mobility of the device can be as high as 1.6 cm2 /V s in air, with a subthreshold slope lower than 0.5 V nF/decade cm2 . By changing

  1. The crystal structure of {pi}-ErBO{sub 3}: New single-crystal data for an old problem

    SciTech Connect (OSTI)

    Pitscheider, Almut [Institut fuer Allgemeine, Anorganische und Theoretische Chemie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria); Kaindl, Reinhard [Institut fuer Mineralogie und Petrographie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52, A-6020 Innsbruck (Austria); Oeckler, Oliver [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen, Butenandtstrasse 5-13, D-81377 Muenchen (Germany); Huppertz, Hubert, E-mail: Hubert.Huppertz@uibk.ac.a [Institut fuer Allgemeine, Anorganische und Theoretische Chemie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria)

    2011-01-15

    Single crystals of the orthoborate {pi}-ErBO{sub 3} were synthesized from Er{sub 2}O{sub 3} and B{sub 2}O{sub 3} under high-pressure/high-temperature conditions of 2 GPa and 800 {sup o}C in a Walker-type multianvil apparatus. The crystal structure was determined on the basis of single-crystal X-ray diffraction data, collected at room temperature. The title compound crystallizes in the monoclinic pseudowollastonite-type structure, space group C2/c, with the lattice parameters a=1128.4(2) pm, b=652.6(2) pm, c=954.0(2) pm, and {beta}=112.8(1){sup o} (R{sub 1}=0.0124 and wR{sub 2}=0.0404 for all data). -- graphical abstract: The first satisfying single-crystal structure determination of {pi}-ErBO{sub 3} sheds light on the extensively discussed structure of {pi}-orthoborates. The application of light pressure during the solid state synthesis yielded in high-quality crystals, due to pressure-induced crystallization. Research highlights: {yields} High-quality single crystals of {pi}-ErBO{sub 3} were prepared via high-pressure-induced crystallization. {yields} At least five different space groups for the rare-earth {pi}-orthoborates are reported. {yields} {pi}-ErBO{sub 3} is isotypic to the pseudowollastonite-type CaSiO{sub 3}. {yields} Remaining ambiguities regarding the structure of the rare-earth {pi}-orthoborates are resolved.

  2. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

    SciTech Connect (OSTI)

    Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A.; Grazianetti, C.; Fanciulli, M.; Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, I-20126, Milano ; Chiappe, D.; Molle, A.

    2013-12-16

    Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

  3. EPR investigation of defects in Bi12GeO20:Cr single crystal irradiated by high energy uranium ions

    E-Print Network [OSTI]

    Stefaniuk, I; Rogalska, I; Wróbel, D

    2013-01-01

    The results of investigations of EPR spectra of chromium doped $Bi_{12} GeO_{20} (BGO)$ single crystals are presented. The crystals were studied before and after irradiation by the $^{235}U$ ions with energy 9.47 MeV/u and fluency $5 \\cdot 10^{2} cm^{-2}$. The effect of heating irradiated samples in air on the EPR spectra is also studied.

  4. Graphene arch gate SiO2 shell silicon nanowire core field effect transistors

    E-Print Network [OSTI]

    Hwang, Sung Woo

    graphene into more complementary metal oxide semiconductor (CMOS)-friendly architectures. FurthermoreGraphene arch gate SiO2 shell silicon nanowire core field effect transistors J. E. Jin, J. H. Lee) metal-semiconductor field-effect transistors on single-crystal -Ga2O3 (010) substrates Appl. Phys. Lett

  5. Crystallographic, electronic, thermal, and magnetic properties of single-crystal SrCo2As2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pandey, Abhishek; Quirinale, D. G.; Jayasekara, W.; Sapkota, A.; Kim, M. G.; Dhaka, R. S.; Lee, Y.; Heitmann, T. W.; Stephens, P. W.; Ogloblichev, V.; et al

    2013-07-01

    In tetragonal SrCo2As2 single crystals, inelastic neutron scattering measurements demonstrated that strong stripe-type antiferromagnetic (AFM) correlations occur at a temperature T = 5 K [W. Jayasekara et al., arXiv:1306.5174] that are the same as in the isostructural AFe2As2 (A = Ca, Sr, Ba) parent compounds of high-Tc superconductors. This surprising discovery suggests that SrCo2As2 may also be a good parent compound for high-Tc superconductivity. Here, structural and thermal expansion, electrical resistivity ?, angle-resolved photoemission spectroscopy (ARPES), heat capacity Cp, magnetic susceptibility ?, 75As NMR and neutron diffraction measurements of SrCo2As2 crystals are reported together with LDA band structure calculations thatmore »shed further light on this fascinating material. The c-axis thermal expansion coefficient ?c is negative from 7 to 300 K, whereas ?a is positive over this T range. The ?(T) shows metallic character. The ARPES measurements and band theory confirm the metallic character and in addition show the presence of a flat band near the Fermi energy EF. The band calculations exhibit an extremely sharp peak in the density of states D(EF) arising from a flat dx2-y2 band. A comparison of the Sommerfeld coefficient of the electronic specific heat with ?(T ? 0) suggests the presence of strong ferromagnetic itinerant spin correlations which on the basis of the Stoner criterion predicts that SrCo2As2 should be an itinerant ferromagnet, in conflict with the magnetization data. The ?(T) does have a large magnitude, but also exhibits a broad maximum at 115 K suggestive of dynamic short-range AFM spin correlations, in agreement with the neutron scattering data. The measurements show no evidence for any type of phase transition between 1.3 and 300 K and we propose that metallic SrCo2As2 has a gapless quantum spin-liquid ground state.« less

  6. Method of bonding single crystal quartz by field-assisted bonding

    DOE Patents [OSTI]

    Curlee, R.M.; Tuthill, C.D.; Watkins, R.D.

    1991-04-23

    The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals. 2 figures.

  7. THIS IS A PRE-PRINT OF PAPER PUBLISHED IN SENSORS AND ACTUATORS A: PHYSICAL, VOL. 120(1), PP. 64-70 , 29 APRIL 2005. 1 Nonlinear Mechanical Effects in Silicon

    E-Print Network [OSTI]

    Kaajakari, Ville

    energy storage density than flexural res- onators [2]. Moreover, the measured nonlinear vibrations have-70 , 29 APRIL 2005. 1 Nonlinear Mechanical Effects in Silicon Longitudinal Mode Beam Resonators Ville effects in micromachined single-crystal silicon resonators are investigated. Longitudinal mode beam

  8. Single crystal diamond detector measurements of deuterium-deuterium and deuterium-tritium neutrons in Joint European Torus fusion plasmas

    SciTech Connect (OSTI)

    Cazzaniga, C., E-mail: carlo.cazzaniga@mib.infn.it; Gorini, G.; Nocente, M. [Department of Physics “G. Occhialini,” University of Milano Bicocca, Piazza della Scienza 3, Milano (Italy) [Department of Physics “G. Occhialini,” University of Milano Bicocca, Piazza della Scienza 3, Milano (Italy); Istituto di Fisica del Plasma, Associazione EURATOM-ENEA-CNR, via Roberto Cozzi 53, Milano (Italy); Sundén, E. Andersson; Binda, F.; Ericsson, G. [Department of Physics and Astronomy, EURATOM-VR Association, Uppsala University, Uppsala (Sweden)] [Department of Physics and Astronomy, EURATOM-VR Association, Uppsala University, Uppsala (Sweden); Croci, G.; Grosso, G.; Cippo, E. Perelli; Tardocchi, M. [Istituto di Fisica del Plasma, Associazione EURATOM-ENEA-CNR, via Roberto Cozzi 53, Milano (Italy)] [Istituto di Fisica del Plasma, Associazione EURATOM-ENEA-CNR, via Roberto Cozzi 53, Milano (Italy); Giacomelli, L.; Rebai, M. [Department of Physics “G. Occhialini,” University of Milano Bicocca, Piazza della Scienza 3, Milano (Italy)] [Department of Physics “G. Occhialini,” University of Milano Bicocca, Piazza della Scienza 3, Milano (Italy); Griesmayer, E. [Atominstitut, Vienna University of Technology (Austria)] [Atominstitut, Vienna University of Technology (Austria); Kaveney, G.; Syme, B. [Culham Centre for Fusion Energy, Culham OX143DB (United Kingdom)] [Culham Centre for Fusion Energy, Culham OX143DB (United Kingdom); Collaboration: JET-EFDA Contributors

    2014-04-15

    First simultaneous measurements of deuterium-deuterium (DD) and deuterium-tritium neutrons from deuterium plasmas using a Single crystal Diamond Detector are presented in this paper. The measurements were performed at JET with a dedicated electronic chain that combined high count rate capabilities and high energy resolution. The deposited energy spectrum from DD neutrons was successfully reproduced by means of Monte Carlo calculations of the detector response function and simulations of neutron emission from the plasma, including background contributions. The reported results are of relevance for the development of compact neutron detectors with spectroscopy capabilities for installation in camera systems of present and future high power fusion experiments.

  9. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  10. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    SciTech Connect (OSTI)

    Roberts, J.G.

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  11. PII S0016-7037(01)00802-X Volatilization kinetics of silicon carbide in reducing gases: An experimental study with

    E-Print Network [OSTI]

    PII S0016-7037(01)00802-X Volatilization kinetics of silicon carbide in reducing gases August 21, 2001) Abstract--The volatilization kinetics of single crystal -SiC, polycrystalline -Si in terrestrial rocks (Bauer et al., 1963; Marshint- sev et al., 1982; Leung, 1990; Filippidis, 1993), although

  12. 4765Federal Register / Vol. 77, No. 20 / Tuesday, January 31, 2012 / Notices 1 See Crystalline Silicon Photovoltaic Cells,

    E-Print Network [OSTI]

    Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China

  13. NREL Core Program (NCPV), Session: Film Silicon (Presentation)

    SciTech Connect (OSTI)

    Branz, H. M.

    2008-04-01

    This project supports the Solar America Initiative by: R and D that contributes to goal of grid parity by 2015; research to fill the industry R and D pipeline for next-generation low-cost scalable products; development of industry collaborative research; and improvement of NREL tools and capabilities for film silicon research. The project addresses both parts of film silicon roadmap: (1) amorphous-silicon-based thin film PV--amorphous and nanocrystalline materials, present '2nd generation' technology, 4% of world PV sales in 2007; (2) advanced R and D toward film crystal silicon--definition, large-grained or single-crystal silicon < 100 {micro}m thick; 3-8 year horizon; and goal of reaching 15% cells at area costs approaching thin films.

  14. Experimental and theoretical investigations of non-centrosymmetric 8-hydroxyquinolinium dibenzoyl-(L)-tartrate methanol monohydrate single crystal

    SciTech Connect (OSTI)

    Sudharsana, N.; Krishnakumar, V.; Nagalakshmi, R.

    2015-01-15

    Graphical abstract: ORTEP diagram of HQDBT. - Highlights: • Single crystal XRD and NMR studies confirm the formation of the title compound. • SHG efficiency was found to be 0.6 times that of KDP. • First-order hyperpolarizability (?) was calculated using HF and B3LYP methods. - Abstract: A novel 8-hydroxyquinolinium dibenzoyl-(L)-tartrate methanol monohydrate crystal has been grown by slow evaporation technique. The single crystal X-ray diffraction analysis has been done for the title compound and is found to crystallize in orthorhombic space group P2{sub 1}2{sub 1}2{sub 1}. The optical absorption cut-off wavelength is found to be 440 nm. The vibrational analysis has been carried out to assess the functional groups present in the title compound. The molecular structure of the title compound has been confirmed by nuclear magnetic resonance spectroscopy. Thermogravimetric, differential scanning calorimetric and differential thermal analyses reveal the melting point and thermal stability of the title compound. The second harmonic generation efficiency is confirmed by Kurtz–Perry powder technique. Further quantum chemical calculations are performed using Gaussian 03 software.

  15. The effect of substrate temperature and growth rate on the doping efficiency of single crystal boron doped diamond

    SciTech Connect (OSTI)

    Demlow, SN; Rechenberg, R; Grotjohn, T

    2014-10-01

    The substrate growth temperature dependence of the plasma gas-phase to solid-phase doping efficiency in single crystal, boron doped diamond (BDD) deposition is investigated. Single crystal diamond (SCD) is grown by microwave plasma assisted chemical vapor deposition (MPACVD) on high pressure, high temperature (HPHT) type Ib substrates. Samples are grown at substrate temperatures of 850-950 degrees C for each of five doping concentration levels, to determine the effect of the growth temperature on the doping efficiency and defect morphology. The substrate temperature during growth is shown to have a significant effect on the grown sample defect morphology, and a temperature dependence of the doping efficiency is also shown. The effect of the growth rate on the doping efficiency is discussed, and the ratio of the boron concentration in the gas phase to the flux of carbon incorporated into the solid diamond phase is shown to be a more predictive measure of the resulting boron concentration than the gas phase boron to carbon ratio that is more commonly reported. (C) 2014 Elsevier B.V. All rights reserved.

  16. Large single crystal quaternary alloys of IB-IIIA-Se/sub 2/ and methods of synthesizing the same

    DOE Patents [OSTI]

    Ciszek, T.F.

    1986-07-15

    New alloys of Cu/sub x/Ag/sub (1-x)/InSe/sub 2/ (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIn/sub y/Ga/sub (1-y)/Se/sub 2/ (where y ranges between 0 and 1 and preferably has a value of about 0.90) in the form of single crystals with enhanced structure perfection, which crystals are substantially free of fissures, are disclosed. Processes are disclosed for preparing the new alloys of Cu/sub x/Ag/sub (1-x)/InSe/sub 2/. The process includes placing stoichiometric quantities of a Cu, Ag, In, and Se reaction mixture or stoichiometric quantities of a Cu, In, Ga, and Se reaction mixture in a refractory crucible in such a manner that the reaction mixture is surrounded by B/sub 2/O/sub 3/, placing the thus loaded crucible in a chamber under a high pressure atmosphere of inert gas to confine the volatile Se to the crucible, and heating the reaction mixture to its melting point. The melt can then be cooled slowly to form, by direct solidification, a single crystal with enhanced structure perfection, which crystal is substantially free of fissures.

  17. Investigations on the electrical, thermal and optical properties of the nonlinear optical allylthiourea mercury chloride single crystals

    SciTech Connect (OSTI)

    Sreekanth, G. [Department of Physics, St. Thomas College Pala, Kottayam 686574, Kerala (India)] [Department of Physics, St. Thomas College Pala, Kottayam 686574, Kerala (India); Chandralingam, S. [Department of Physics, Jawaharlal Nehru Technological University, Hyderabad 500085 (India)] [Department of Physics, Jawaharlal Nehru Technological University, Hyderabad 500085 (India); Philip, Jacob; Jayalakshmy, M.S. [Department of instrumentation, Cochin University of Science and Technology, Cochin, Kerala (India)] [Department of instrumentation, Cochin University of Science and Technology, Cochin, Kerala (India); Philip, Reji; Sridharan, Kishore [Raman research institute, Bangalore, Karnataka 560080 (India)] [Raman research institute, Bangalore, Karnataka 560080 (India); Santhosh Kumar, R. [Department of Physics, St. George's College Aruvithura, Kottayam 686122, Kerala (India)] [Department of Physics, St. George's College Aruvithura, Kottayam 686122, Kerala (India); Joseph, Ginson P., E-mail: ginsonpj@gmail.com [Department of Physics, St. Thomas College Pala, Kottayam 686574, Kerala (India)

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ? The single crystals of dimension 10 × 5 × 5 mm{sup 3} of allylthiourea mercury chloride are synthesized using slow evaporation technique. ? The bandgap of allylthiourea mercury chloride crystal is found to be about 3.18 eV. ? The optical nonlinearity of the crystal sample are studied using the open aperture Z-scan technique employing a nanosecond laser at 532 nm, and three photon absorption effect has been found. ? An improved photo pyroelectric is used to find the thermal parameters of the crystal. ? The piezoelectric charge coefficient is determined. -- Abstract: Single crystals of dimension 10 × 5 × 5 mm{sup 3} of allylthiourea mercury chloride were synthesized from aqueous solution using slow evaporation technique at ambient temperature. The grown crystals are confirmed by elemental analysis. The band gap of Allylthiourea mercury chloride crystal was found to be about 3.18 eV. The optical nonlinearity of the crystal sample was studied using the open aperture Z-scan technique employing a nanosecond laser at 532 nm, and a three-photon absorption effect has been found. The electrical properties such as dielectric constant, dielectric loss and ac conductivity of the sample were carried out by Agillent E 4980 A LCR meter at different temperatures. An improved photopyroelectric technique was used to find the thermal parameters of the crystal. The piezo electric charge coefficient is also determined.

  18. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    SciTech Connect (OSTI)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  19. Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and methods of synthesizing the same

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1988-01-01

    New alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2 (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIn.sub.y Ga.sub.(1-y) Se.sub.2 (where y ranges between 0 and 1 and preferably has a value of about 0.90) in the form of single crystals with enhanced structure perfection, which crystals are substantially free of fissures are disclosed. Processes are disclosed for preparing the new alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2. The process includes placing stoichiometric quantities of a Cu, Ag, In, and Se reaction mixture or stoichiometric quantities of a Cu, In, Ga, and Se reaction mixture in a refractory crucible in such a manner that the reaction mixture is surrounded by B.sub.2 O.sub.3, placing the thus loaded crucible in a chamber under a high pressure atmosphere of inert gas to confine the volatile Se to the crucible, and heating the reaction mixture to its melting point. The melt can then be cooled slowly to form, by direct solidification, a single crystal with enhanced structure perfection, which crystal is substantially free of fissures.

  20. Effects of composition and temperature on the large field behavior of [011]{sub C} relaxor ferroelectric single crystals

    SciTech Connect (OSTI)

    Gallagher, John A.; Lynch, Christopher S., E-mail: cslynch@seas.ucla.edu [Department of Mechanical and Aerospace Engineering, University of California Los Angeles, 420 Westwood Plaza, Los Angeles, California 90095 (United States); Tian, Jian [H. C. Materials Corporation, 479 Quadrangle Dr., Suite-E, Bolingbrook, Illinois 60440 (United States)

    2014-08-04

    The large field behavior of [011]{sub C} cut relaxor ferroelectric lead indium niobate–lead magnesium niobate–lead titanate, xPb(In{sub 1/2}Nb{sub 1/2})O{sub 3}-(1-x-y)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-yPbTiO{sub 3}, single crystals was experimentally characterized in the piezoelectric d{sub 322}-mode configuration under combined mechanical, electrical, and thermal loading. Increasing the concentration of lead indium niobate and decreasing the concentration of lead titanate in compositions near the morphotropic phase boundary resulted in a decrease of mechanical compliance, dielectric permittivity, and piezoelectric coefficients as well as a shift from a continuous to a discontinuous transformation.

  1. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

    SciTech Connect (OSTI)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

    2013-12-04

    The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

  2. Synthesis and single crystal x-ray diffraction study of a Schiff base derived from 4-acylpyrazolone and 2-aminophenol

    SciTech Connect (OSTI)

    Sharma, Naresh; Kant, Rajni Gupta, Vivek K.; Jadeja, R. N.

    2014-04-24

    The title compound, (Z)-1-(3-chlorophenyl)-4[1((2hydroxyphenyl)amino)propylidene] -3-methyl-1H-pyrazol-5(4H)-one was synthesized by refluxing compound 1-(m-chlorophenyl)-3-methyl-4-propionyl-5-pyrazolone, with 2-aminophenol in ethanol. The compound crystallizes in the orthorhombic crystal system with space group Pca2{sub 1} having unit cell parameters: a = 26.2993(8), b = 7.0724(2) and c = 18.7170(5)Å. The structure contains two crystallographically independent molecules, A, and, B, in the asymmetric unit cell. The crystal structure was solved by direct method using single crystal X-ray diffraction data collected at room temperature and refined by full-matrix least-squares procedures to a final R- value of 0.049 for 5207 observed reflections.

  3. Insulating and metallic spin glass in Ni-doped KxFe2-ySe? single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Abeykoon, Milinda; Wang, Kefeng; Lei, Hechang; Lazarevic, N.; Warren, J. B.; Bozin, E. S.; Popovic, Z. V.; Petrovic, C.

    2015-05-04

    We report electron doping effects by Ni in KxFe2-?-yNiySe? (0.06 ? y ? 1.44) single crystal alloys. A rich ground state phase diagram is observed. A small amount of Ni (~ 4%) suppressed superconductivity below 1.8 K, inducing insulating spin glass magnetic ground state for higher Ni content. With further Ni substitution, metallic resistivity is restored. For high Ni concentration in the lattice the unit cell symmetry is high symmetry I4/mmm with no phase separation whereas both I4/m + I4/mmm space groups were detected in the phase separated crystals when concentration of Ni more »with the absence of crystalline Fe vacancy order.« less

  4. Phase transition in bulk single crystals and thin films of VO2 by nanoscale infrared spectroscopy and imaging

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Mengkun; Sternbach, Aaron J.; Wagner, Martin; Slusar, Tetiana V.; Kong, Tai; Bud'ko, Sergey L.; Kittiwatanakul, Salinporn; Qazilbash, M. M.; McLeod, Alexander; Fei, Zhe; et al

    2015-06-29

    We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO2 with sub-grain-size spatial resolution (~20nm), we show that epitaxial strain in VO2 thin films not only triggers spontaneous local phase separations, but leads to intermediate electronic and lattice states that are intrinsically different from those found in bulk. Generalized rules of strain- and symmetry-dependent mesoscopic phase inhomogeneity are also discussed. Furthermore, these results set the stage for a comprehensive understanding ofmore »complex energy landscapes that may not be readily determined by macroscopic approaches.« less

  5. Growth, structural and optical characterization of L-histidine 4-nitrophenolate (LHPNP) single crystals for NLO applications

    SciTech Connect (OSTI)

    Mahadevan, M., E-mail: devanphysics@gmail.com [Department of Physics, Adhiparasakthi Engineering College, Melmaruvathur - 603319 (India); Ramachandran, K., E-mail: ramach76@yahoo.com [Department of Physics, SRM University - Vadapalani Campus, Chennai -600026 (India); Anandan, P., E-mail: anandantcet@gmail.com [Department of Physics, Thiruvalluvar College of Engineering and Technology, Vandavasi-604 505, India and Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu 432-8011 (Japan); Arivanandhan, M., E-mail: arivucz@gmail.com, E-mail: royhaya@ipc.shizuoka.ac.jp; Hayakawa, Y., E-mail: arivucz@gmail.com, E-mail: royhaya@ipc.shizuoka.ac.jp [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu 432-8011 (Japan)

    2014-10-15

    Using slow evaporation solution growth technique, single crystals of L-histidine-4-nitro phenolate has been grown from the solution. Structural analyses were carried out by powder x-ray diffraction, FT-Raman, Fourier Transform Infrared and Nuclear Magnetic Resonance spectral methods to conform the grown crystals. Thermal stability of the grown crystals was studied by thermo-gravimetric (TG) and differential thermal analyses (DTA). UV-Vis spectral analysis has been carried out to find the transparency of the grown crystal. Nonlinear optical property has been confirmed by Kurtz powder technique. The PL measurements were carried out in Perkin Elmer LS 55 Luminescence spectrometer using 410 nm as excitation wavelength. The observed properties have confirmed that the grown crystal is suitable for nonlinear optical applications.

  6. Single crystal growth of Yb doped NaGd(WO{sub 4}){sub 2} and structural and spectroscopic studies

    SciTech Connect (OSTI)

    Singh, S. G.; Singh, A. K.; Desai, D. G.; Tiwari, B.; Tyagi, M. [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai-400085 (India)

    2014-04-24

    High quality single crystals of NaGd(WO{sub 4}){sub 2} doped with 5 mol % Yb and oriented along <001> have been grown by the Czochralski technique in Ar atmosphere. The tetragonal space group I41/a accounts for all the reflections observed in the powder X-ray diffraction analysis. Polarized optical spectroscopy at room temperature revealed a direction dependence of absorption at different wavelength. As a novel uniaxial laser host for Yb{sup 3+}, NaGd(WO{sub 4}){sub 2} is characterized with respect to its transparency and band-edge. The emission spectrum of Yb{sup 3+} (excitation: 980-990 nm diode laser) was also recorded.

  7. Insulating and metallic spin glass in Ni-doped K x Fe 2 - y Se 2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Abeykoon, Milinda; Wang, Kefeng; Lei, Hechang; Lazarevic, N.; Warren, J. B.; Bozin, E. S.; Popovic, Z. V.; Petrovic, C.

    2015-05-01

    We report electron doping effects by Ni in KxFe2-?-yNiySe?(0.06?y?1.44) single-crystal alloys. A rich ground-state phase diagram is observed. A small amount of Ni (~4%) suppressed superconductivity below 1.8 K, inducing insulating spin-glass magnetic ground state for higher Ni content. With further Ni substitution, metallic resistivity is restored. For high Ni concentration in the lattice the unit cell symmetry is high symmetry I4/mmm with no phase separation whereas both I4/m+I4/mmm space groups were detected in the phase separated crystals when concentration of Ni < Fe. The absence of superconductivity coincides with the absence of crystalline Fe vacancy order.

  8. Catalytic hydrodechlorination of CFC-114a (CF{sub 3}-CFCl{sub 2}) over palladium single crystals

    SciTech Connect (OSTI)

    Gerken, C.A.; Rupprechter, G.; Ribeiro, F.H.; Somorjai, G.A.

    1997-12-31

    As the chlorofluorocarbons (CFC`s) are being phased out, their most promising replacements are the hydrofluorocarbons (HFC`s). In particular, CFC-12 (CF{sub 2}Cl{sub 2}), widely used as a refrigerant, for example, is being replaced by HFC-134a CF{sub 3}-CFH{sub 2}. One possible route to HFC-134a is the hydrodechlorination of CFC-114a (CF{sub 3}CFCl{sub 2}) over palladium catalysts. We report results using single crystal palladium catalysts and compare the reactivity of the low Miller index planes and a polycrystalline foil. We correlate these results with parallel UHV surface science experiments. Deuterium isotope studies (D{sub 2} rather than H{sub 2}) will also be presented and discussed. Of particular interest is an observed sample history-dependent inverse isotope effect.

  9. Single-crystal epitaxial thin films of SrFeO{sub 2} with FeO{sub 2} 'infinite layers'

    SciTech Connect (OSTI)

    Inoue, Satoru; Kawai, Masanori; Shimakawa, Yuichi [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Mizumaki, Masaichiro; Kawamura, Naomi [Japan Synchrotron Radiation Research Institute/SPring-8, Sayo, Hyogo 679-5198 (Japan); Watanabe, Takashi; Tsujimoto, Yoshihiro; Kageyama, Hiroshi; Yoshimura, Kazuyoshi [Department of Chemistry, Graduate School of Science, Kyoto University, Sakyo, Kyoto 606-8502 (Japan)

    2008-04-21

    Single-crystal thin films of SrFeO{sub 2}, which is an oxygen-deficient perovskite with ''infinite layers'' of Fe{sup 2+}O{sub 2}, were prepared by using CaH{sub 2} for low-temperature reduction of epitaxial SrFeO{sub 2.5} single-crystal films deposited on KTaO{sub 3} substrates. This reduction process, removing oxygen ions from the perovskite structure framework and causing rearrangements of oxygen ions, topotactically transforms the brownmillerite SrFeO{sub 2.5} to the c-axis oriented SrFeO{sub 2}.

  10. Piezoelectric and ferroelectric properties of lead-free niobium-rich potassium lithium tantalate niobate single crystals

    SciTech Connect (OSTI)

    Li, Jun, E-mail: lijuna@hit.edu.cn [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Li, Yang [Department of chemistry, Harbin Institute of Technology, Harbin 150001 (China); Zhou, Zhongxiang [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Guo, Ruyan; Bhalla, Amar S. [Multifunctional Electronic Materials and Device Research Lab, Department of Electrical and Computer Engineering, The University of Texas at San Antonio, San Antonio 78249 (United States)

    2014-01-01

    Graphical abstract: - Highlights: • Lead-free K{sub 0.95}Li{sub 0.05}Ta{sub 1?x}Nb{sub x}O{sub 3} single crystals were grown using the top-seeded melt growth method. • The piezoelectric and ferroelectric properties of as-grown crystals were systematically investigated. • The piezoelectric properties are very attractive, e.g. for x = 0.60 composition, k{sub t} ? 70%, k{sub 31} ? 70%, k{sub 33} ? 77%, d{sub 31} ? 230 pC/N, d{sub 33} ? 600 pC/N. • The coercive fields of P–E hysteresis loops are quite small, about or less than 1 kV/mm. - Abstract: Lead-free potassium lithium tantalate niobate single crystals with the composition of K{sub 0.95}Li{sub 0.05}Ta{sub 1?x}Nb{sub x}O{sub 3} (abbreviated as KLTN, x = 0.51, 0.60, 0.69, 0.78) were grown using the top-seeded melt growth method. Their piezoelectric and ferroelectric properties in as-grown crystals have been systematically investigated. The phase transitions and Curie temperatures were determined from dielectric and pyroelectric measurements. Piezoelectric coefficients and electromechanical coupling factors in thickness mode, length-extensional mode and longitudinal mode were obtained. The piezoelectric properties are very attractive, e.g. for x = 0.60 composition, k{sub t} ? 70%, k{sub 31} ? 70%, k{sub 33} ? 77%, d{sub 31} ? 230 pC/N, d{sub 33} ? 600 pC/N are comparable to the lead-based PZT composition. The polarization versus electric field hysteresis loops show saturated shapes. In short, lead-free niobium-rich KLTN system possesses comparable properties to those in important lead-based piezoelectric material nowadays.

  11. High-pressure single-crystal elasticity study of CO{sub 2} across phase I-III transition

    SciTech Connect (OSTI)

    Zhang, Jin S. Bass, Jay D.; Shieh, Sean R.; Dera, Przemyslaw; Prakapenka, Vitali

    2014-04-07

    Sound velocities and elastic moduli of solid single-crystal CO{sub 2} were measured at pressures up to 11.7(3) GPa by Brillouin spectroscopy. The aggregate adiabatic bulk modulus (K{sub S}), shear modulus (G), and their pressure derivatives for CO{sub 2} Phase I are K{sub S0}?=?3.4(6) GPa, G{sub 0}?=?1.8(2) GPa, (dK{sub S}/dP){sub 0}?=?7.8(3), (dG/dP){sub 0}?=?2.5(1), (d{sup 2}K{sub S}/dP{sup 2}){sub 0}?=??0.23(3) GPa{sup ?1}, and (d{sup 2}G/dP{sup 2}){sub 0}?=??0.10(1) GPa{sup ?1}. A small increase of elastic properties was observed between 9.8(1) and 10.5(3) GPa, in agreement with the CO{sub 2} I-III transition pressure determined from previous x-ray diffraction experiments. Above the transition pressure P{sub T}, we observed a mixture dominated by CO{sub 2}-I, with minor CO{sub 2}-III. The CO{sub 2}-I + III mixture shows slightly increased sound velocities compared to pure CO{sub 2}-I. Elastic anisotropy calculated from the single-crystal elasticity tensor exhibits a decrease with pressure beginning at 7.9(1) GPa, which is lower than P{sub T}. Our results coincide with recent X-ray Raman observations, suggesting that a pressure-induced electronic transition is related to local structural and optical changes.

  12. Van der Waals Epitaxial Growth of Single-Crystal Two-Dimensional GaSe on Graphene

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Basile, Leonardo; Huang, Bing; Ma, Cheng; Lee, Jaekwang; Vlassiouk, Ivan V.; Puretzky, Alexander A.; Lin, Ming-Wei; Chi, Miaofang; Idrobo Tapia, Juan Carlos; et al

    2015-07-22

    Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigationsmore »of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E21g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.« less

  13. Laser-induced damage threshold of silicon in millisecond, nanosecond, and picosecond regimes

    SciTech Connect (OSTI)

    Wang, X.; Shen, Z. H.; Lu, J.; Ni, X. W. [School of Science, Nanjing University of Science and Technology, Nanjing 210094 (China)

    2010-08-15

    Millisecond, nanosecond, and picosecond laser pulse induced damage thresholds on single-crystal are investigated in this study. The thresholds of laser-induced damage on silicon are calculated theoretically for three pulse widths based on the thermal damage model. An axisymmetric mathematical model is established for the transient temperature field of the silicon. Experiments are performed to test the damage thresholds of silicon at various pulse widths. The results indicate that the damage thresholds obviously increase with the increasing of laser pulse width. Additionally, the experimental results agree well with theoretical calculations and numerical simulation results.

  14. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  15. Proc. IEEE Workshop on Micro Electro Mechanical Structures (MEMS), San Diego, CA, February 1996. SINGLECRYSTAL SILICON ACTUATOR ARRAYS FOR MICRO MANIPULATION TASKS

    E-Print Network [OSTI]

    Donald, Bruce Randall

    Proc. IEEE Workshop on Micro Electro Mechanical Structures (MEMS), San Diego, CA, February 1996. SINGLE­CRYSTAL SILICON ACTUATOR ARRAYS FOR MICRO MANIPULATION TASKS Karl­Friedrich B¨ohringer Bruce and Department of Computer Science Cornell Nanofabrication Facility Cornell University, Ithaca, NY 14853 URL http://www.cs.cornell.edu/Info/People/karl/Micro

  16. A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals

    E-Print Network [OSTI]

    Raychaudhuri, Pratap

    and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Rd., Colaba, Mumbai 400 005, India 2 Excel Instruments, 28, Sarvodaya Industrial Premises, Off Mahakali Caves Road, Andheri (East), Mumbai resolution imaging and spectroscopy on NbSe2 single crystal and spec- troscopic maps obtained

  17. Anisotropic magnetoresistance of single-crystal HoNi2B2C and the interplay of magnetic and superconducting order 

    E-Print Network [OSTI]

    Rathnayaka, KDD; Naugle, Donald G.; Cho, BK; Canfield, PC.

    1996-01-01

    The in-plane resistivity and magnetization measurements as a function of the magnitude and direction of the magnetic field and the temperature are reported for single-crystal samples of the HoNi2B2C magnetic superconductor. Features corresponding...

  18. Torque magnetometry study of metamagnetic transitions in single-crystal HoNi(2)B(2)C at T approximate to 1.9 K 

    E-Print Network [OSTI]

    Rathnayaka, K. D. D.; Belevtsev, B. I.; Naugle, Donald G.

    2007-01-01

    Metamagnetic transitions in single-crystal rare-earth nickel borocarbide HoNi(2)B(2)C have been studied at T approximate to 1.9 K with a Quantum Design torque magnetometer. This compound is highly anisotropic with a variety of metamagnetic states...

  19. In situ transmission electron microscopy study of electric-field-induced microcracking in single crystal Pb,,Mg13Nb23...O3 PbTiO3

    E-Print Network [OSTI]

    Chen, Haydn H.

    In situ transmission electron microscopy study of electric-field-induced microcracking in single March 2000; accepted for publication 2 May 2000 In this letter, we report in situ transmission electron microscopy TEM study of effect of a cyclic electric field on microcracking in a single crystal piezoelectric

  20. System and method for liquid silicon containment

    SciTech Connect (OSTI)

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2014-06-03

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  1. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2013-05-28

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  2. Antiferromagnetism in EuCu2As2 and EuCu1.82Sb2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anand, V. K.; Johnston, D. C.

    2015-05-07

    Single crystals of EuCu2As2 and EuCu2Sb2 were grown from CuAs and CuSb self-flux, respectively. The crystallographic, magnetic, thermal, and electronic transport properties of the single crystals were investigated by room-temperature x-ray diffraction (XRD), magnetic susceptibility ? versus temperature T, isothermal magnetization M versus magnetic field H, specific heat Cp(T), and electrical resistivity ?(T) measurements. EuCu2As2 crystallizes in the body-centered tetragonal ThCr2Si2-type structure (space group I4/mmm), whereas EuCu2Sb2 crystallizes in the related primitive tetragonal CaBe2Ge2-type structure (space group P4/nmm). The energy-dispersive x-ray spectroscopy and XRD data for the EuCu2Sb2 crystals showed the presence of vacancies on the Cu sites, yielding themore »actual composition EuCu1.82Sb2. The ?(T) and Cp(T) data reveal metallic character for both EuCu2As2 and EuCu1.82Sb2. Antiferromagnetic (AFM) ordering is indicated from the ?(T),Cp(T), and ?(T) data for both EuCu2As2 (TN = 17.5 K) and EuCu1.82Sb2 (TN = 5.1 K). In EuCu1.82Sb2, the ordered-state ?(T) and M(H) data suggest either a collinear A-type AFM ordering of Eu+2 spins S = 7/2 or a planar noncollinear AFM structure, with the ordered moments oriented in the tetragonal ab plane in either case. This ordered-moment orientation for the A-type AFM is consistent with calculations with magnetic dipole interactions. As a result, the anisotropic ?(T) and isothermal M(H) data for EuCu2As2, also containing Eu+2 spins S = 7/2, strongly deviate from the predictions of molecular field theory for collinear AFM ordering and the AFM structure appears to be both noncollinear and noncoplanar.« less

  3. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOE Patents [OSTI]

    Vernon, Stanley M. (Wellesley, MA)

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  4. Thermal chemistry of copper(I)-N,N '-di-sec-butylacetamidinate on Cu(110) single-crystal surfaces

    SciTech Connect (OSTI)

    Ma Qiang; Zaera, Francisco; Gordon, Roy G.

    2012-01-15

    The surface chemistry of copper(I)-N,N'-di-sec-butylacetamidinate on Cu(110) single-crystal surfaces has been characterized under ultrahigh vacuum by temperature programmed desorption (TPD) and X-ray photoelectron spectroscopy. A series of thermal stepwise conversions were identified, starting with the partial dissociative adsorption of the copper acetamidinate dimers into a mixture of monomers and dimers on the surface. An early dissociation of a C-N bond leads to the production of N-sec-butylacetamidine, which is detected in TPD experiments in three temperature regimes, the last one centered around 480 K. Butene, and a small amount of butane, is also detected above approximately 500 K, and hydrogen production, an indication of dehydrogenation of surface fragments, is observed at 460, 550 and 670 K. In total, only about 10% of the initial copper(I)-N,N'-di-sec-butylacetamidinate adsorbed monolayer decomposes, and only about {approx}3% of carbon is left behind on the surface after heating to high temperatures. The implications of this surface chemistry to the design of chemical film growth processes using copper acetamidinates as precursors are discussed.

  5. Superconducting gap evolution in overdoped BaFe?(As1-xPx)? single crystals through nanocalorimetry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Campanini, D.; Diao, Z.; Fang, L.; Kwok, W.-K.; Welp, U.; Rydh, A.

    2015-06-01

    We report on specific heat measurements on clean overdoped BaFe?(As1-xPx)? single crystals performed with a high resolution membrane-based nanocalorimeter. A nonzero residual electronic specific heat coefficient at zero temperature ?r=C/T|T?0 is seen for all doping compositions, indicating a considerable fraction of the Fermi surface ungapped or having very deep minima. The remaining superconducting electronic specific heat is analyzed through a two-band s-wave ? model in order to investigate the gap structure. Close to optimal doping we detect a single zero-temperature gap of ??~5.3 me V, corresponding to ??/kBTc ~ 2.2. Increasing the phosphorus concentration x, the main gap reduces till a value of ?? ~ 1.9 meV for x = 0.55 and a second weaker gap becomes evident. From the magnetic field effect on ?r, all samples however show similar behavior [?r(H) - ?r (H = 0)? Hn, with n between 0.6 and 0.7]. This indicates that, despite a considerable redistribution of the gap weights, the total degree of gap anisotropy does not change drastically with doping.

  6. A statistical model approximation for perovskite solid-solutions: a Raman study of lead-zirconate- titanate single crystal

    SciTech Connect (OSTI)

    Frantti, Johannes [Aalto University, Finland; Fujioka, Y [Aalto University, Finland; Puretzky, Alexander A [ORNL; Xie, Y [Simon Fraser University, Canada; Glazer, A [Clarendon Laboratory, Department of Physics, University of Oxford

    2013-01-01

    Lead titanate (PbTiO3) is a classical example of a ferroelectric perovskite oxide illustrating a displacive phase transition accompanied by a softening of a symmetry-breaking mode. The underlying assumption justifying the soft-mode theory is that the crystal is macroscopically sufficiently uniform so that a meaningful free energy function can be formed. In contrast to PbTiO3, experimental studies show that the phase transition behaviour of lead-zirconate-titanate solid solution (PZT) is far more subtle. Most of the studies on the PZT system have been dedicated to ceramic or powder samples, in which case an unambiguous soft-mode study is not possible, as modes with different symmetries appear together. Our Raman scattering study on titanium-rich PZT single crystal shows that the phase transitions in PZT cannot be described by a simple soft-mode theory. In strong contrast to PbTiO3, splitting of transverse E-symmetry modes reveals that there are different locally-ordered regions. The role of crystal defects, random distribution of Ti and Zr at the B- cation site and Pb ions shifted away from their ideal positions, dictates the phase transition mechanism. A statistical model explaining the observed peak splitting and phase transformation to a complex state with spatially varying local order in the vicinity of the morphotropic phase boundary is given.

  7. Radiation damage by light- and heavy-ion bombardment of single-crystal LiNbO?

    SciTech Connect (OSTI)

    Huang, Hsu-Cheng [Columbia Univ., New York, NY (United States); Zhang, Lihua [Brookhaven National Lab. (BNL), Upton, NY (United States); Malladi, Girish [SUNY Polytechnic Inst., Albany, NY (United States); Dadap, Jerry I. [Columbia Univ., New York, NY (United States); Manandhar, Sandeep [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kisslinger, Kim [Brookhaven National Lab. (BNL), Upton, NY (United States); Vemuri, Rama Sesha R. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Shutthanandan, Vaithiyalingam [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Bakhru, Hassaram [SUNY Polytechnic Inst., Albany, NY (United States); Osgood, Jr., Richard M. [Columbia Univ., New York, NY (United States)

    2015-01-01

    In this work, a battery of analytical methods including in situ RBS/C, confocal micro-Raman, TEM/STEM, EDS, AFM, and optical microscopy were used to provide a comparative investigation of light- and heavy-ion radiation damage in single-crystal LiNbO?. High (~MeV) and low (~100s keV) ion energies, corresponding to different stopping power mechanisms, were used and their associated damage events were observed. In addition, sequential irradiation of both ion species was also performed and their cumulative depth-dependent damage was determined. It was found that the contribution from electronic stopping by high-energy heavy ions gave rise to a lower critical fluence for damage formation than for the case of low-energy irradiation. Such energy-dependent critical fluence of heavy-ion irradiation is two to three orders of magnitude smaller than that for the case of light-ion damage. In addition, materials amorphization and collision cascades were seen for heavy-ion irradiation, while for light ion, crystallinity remained at the highest fluence used in the experiment. The irradiation-induced damage is characterized by the formation of defect clusters, elastic strain, surface deformation, as well as change in elemental composition. In particular, the presence of nanometric-scale damage pockets results in increased RBS/C backscattered signal and the appearance of normally forbidden Raman phonon modes. The location of the highest density of damage is in good agreement with SRIM calculations. (author)

  8. Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

    SciTech Connect (OSTI)

    Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-04-01

    FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe{sub 50}Co{sub 50} alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal.

  9. Preparation and structural characterization of FeCo epitaxial thin films on insulating single-crystal substrates

    SciTech Connect (OSTI)

    Nishiyama, Tsutomu; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    FeCo epitaxial films were prepared on MgO(111), SrTiO{sub 3}(111), and Al{sub 2}O{sub 3}(0001) single-crystal substrates by ultrahigh vacuum molecular beam epitaxy. The effects of insulating substrate material on the film growth process and the structures were investigated. FeCo(110){sub bcc} films grow on MgO substrates with two type domains, Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS) relationships. On the contrary, FeCo films grown on SrTiO{sub 3} and Al{sub 2}O{sub 3} substrates include FeCo(111){sub bcc} crystal in addition to the FeCo(110){sub bcc} crystals with NW and KS relationships. The FeCo(111){sub bcc} crystal consists of two type domains whose orientations are rotated around the film normal by 180 deg. each other. The out-of-plane and the in-plane lattice spacings of FeCo(110){sub bcc} and FeCo(111){sub bcc} crystals formed on the insulating substrates are in agreement with those of the bulk Fe{sub 50}Co{sub 50} (at. %) crystal with small errors ranging between +0.2% and +0.4%, showing that the strains in the epitaxial films are very small.

  10. Superconducting gap evolution in overdoped BaFe?(As1-xPx)? single crystals through nanocalorimetry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Campanini, D.; Diao, Z.; Fang, L.; Kwok, W.-K.; Welp, U.; Rydh, A.

    2015-06-01

    We report on specific heat measurements on clean overdoped BaFe?(As1-xPx)? single crystals performed with a high resolution membrane-based nanocalorimeter. A nonzero residual electronic specific heat coefficient at zero temperature ?r=C/T|T?0 is seen for all doping compositions, indicating a considerable fraction of the Fermi surface ungapped or having very deep minima. The remaining superconducting electronic specific heat is analyzed through a two-band s-wave ? model in order to investigate the gap structure. Close to optimal doping we detect a single zero-temperature gap of ??~5.3 me V, corresponding to ??/kBTc ~ 2.2. Increasing the phosphorus concentration x, the main gap reduces tillmore »a value of ?? ~ 1.9 meV for x = 0.55 and a second weaker gap becomes evident. From the magnetic field effect on ?r, all samples however show similar behavior [?r(H) - ?r (H = 0)? Hn, with n between 0.6 and 0.7]. This indicates that, despite a considerable redistribution of the gap weights, the total degree of gap anisotropy does not change drastically with doping.« less

  11. Dentritic morphology and microsegregation in directionally solidified superalloy, PWA-1480, single crystal: Effect of gravity; center director's discretionary fund report

    SciTech Connect (OSTI)

    Tewari, S.N.; Kumar, M.V.; Lee, J.E.; Curreri, P.A.

    1990-11-01

    Primary dendrite spacings, secondary dendrite spacings, and microsegregation have been examined in PWA-1480 single crystal specimens which were directionally solidified during parabolic maneuvers on the KC-135 aircraft. Experimentally observed growth rate and thermal gradient dependence of primary dendrite spacings are in good agreement with predictions from dendrite growth models for binary alloys. Secondary dendrite coarsening kinetics show a reasonable fit with the predictions from an analytical model proposed by Kirkwood for a binary alloy. The partition coefficients of tantalum, titanium, and aluminum are observed to be less than unity, while that for tungsten and cobalt are greater than unity. This is qualitatively similar to the nickel base binaries. Microsegregation profiles experimentally observed for PWA-1480 superalloy show a good fit with Bower, Brody, and Flemings model developed for binary alloys. Transitions in gravity levels do not appear to affect primary dendrite spacings. A trend of decreased secondary arm spacings with transition from high gravity to the low gravity period was observed at a growth speed of 0.023 cm s(exp -1). However, definite conclusions can only be drawn by experiments at lower growth speeds which make it possible to examine the side-branch coarsening kinetics over a longer duration. Such experiments, not possible due to the insufficient low-gravity time of the KC-135, may be carried out in the low-gravity environment of space.

  12. Boost the electron mobility of solution-grown organic single crystals via reducing the amount of polar solvent residues

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xue, Guobiao; Xin, Huolin L.; Wu, Jiake; Fan, Congcheng; Liu, Shuang; Huang, Zhuoting; Liu, Yujing; Shan, Bowen; Miao, Qian; Chen, Hongzheng; et al

    2015-10-29

    Enhancing electron transport to match with the development in hole transport is critical for organic electronics in the future. As electron motion is susceptible to extrinsic factors, seeking these factors and avoiding their negative effects have become the central challenge. Here, the existence of polar solvent residues in solution-grown single-crystals of 6,13-bis(triisopropylsilylethynyl)-5,7,12,14-tetraazapentacene is identified as a factor detrimental to electron motion. Field-effect transistors of the crystals exhibit electron mobility boosted by about 60% after the residues are removed. The average electron mobility reaches up to 8.0 ± 2.2 cm2 V–1 s–1 with a highest value of 13.3 cm2 V–1 s–1;more »these results are significantly higher than those obtained previously for the same molecule (1.0–5.0 cm2 V–1 s–1). Furthermore, the achieved mobility is also higher than the maximum reported electron mobility for organic materials (11 cm2 V–1 s–1). As a result, this work should greatly accelerate the advancement of organic electron-transporting materials.« less

  13. A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

    SciTech Connect (OSTI)

    Mokuno, Yoshiaki Kato, Yukako; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Yamada, Hideaki; Shikata, Shinichi

    2014-06-23

    A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400?cm{sup ?2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

  14. A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals

    SciTech Connect (OSTI)

    Kamlapure, Anand; Saraswat, Garima; Ganguli, Somesh Chandra; Bagwe, Vivas; Raychaudhuri, Pratap; Pai, Subash P.

    2013-12-15

    We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350 mK and in magnetic fields up to 9 T, with thin film deposition and in situ single crystal cleaving capabilities. The main focus lies on the simple design of STM head and a sample holder design that allows us to get spectroscopic data on superconducting thin films grown in situ on insulating substrates. Other design details on sample transport, sample preparation chamber, and vibration isolation schemes are also described. We demonstrate the capability of our instrument through the atomic resolution imaging and spectroscopy on NbSe{sub 2} single crystal and spectroscopic maps obtained on homogeneously disordered NbN thin film.

  15. From micro- to nano-scale molding of metals : size effect during molding of single crystal Al with rectangular strip punches.

    SciTech Connect (OSTI)

    Chen, K.; Meng, W. J.; Mei, F.; Hiller, J.; Miller, D. J. (Materials Science Division); (Louisiana State Univ.); (Enervana Tech. LLC)

    2011-02-01

    A single crystal Al specimen was molded at room temperature with long, rectangular, strip diamond punches. Quantitative molding response curves were obtained at a series of punch widths, ranging from 5 {micro}m to 550 nm. A significant size effect was observed, manifesting itself in terms of significantly increasing characteristic molding pressure as the punch width decreases to 1.5 {micro}m and below. A detailed comparison of the present strip punch molding results was made with Berkovich pyramidal indentation on the same single crystal Al specimen. The comparison reveals distinctly different dependence of the characteristic pressure on corresponding characteristic length. The present results show the feasibility of micro-/nano-scale compression molding as a micro-/nano-fabrication technique, and offer an experimental test case for size-dependent plasticity theories.

  16. Radiation damage by light- and heavy-ion bombardment of single-crystal LiNbO?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Huang, Hsu-Cheng; Zhang, Lihua; Malladi, Girish; Dadap, Jerry I.; Manandhar, Sandeep; Kisslinger, Kim; Vemuri, Rama Sesha R.; Shutthanandan, Vaithiyalingam; Bakhru, Hassaram; Osgood, Jr., Richard M.

    2015-04-14

    In this work, a battery of analytical methods including in situ RBS/C, confocal micro-Raman, TEM/STEM, EDS, AFM, and optical microscopy were used to provide a comparative investigation of light- and heavy-ion radiation damage in single-crystal LiNbO?. High (~MeV) and low (~100s keV) ion energies, corresponding to different stopping power mechanisms, were used and their associated damage events were observed. In addition, sequential irradiation of both ion species was also performed and their cumulative depth-dependent damage was determined. It was found that the contribution from electronic stopping by high-energy heavy ions gave rise to a lower critical fluence for damage formationmore »than for the case of low-energy irradiation. Such energy-dependent critical fluence of heavy-ion irradiation is two to three orders of magnitude smaller than that for the case of light-ion damage. In addition, materials amorphization and collision cascades were seen for heavy-ion irradiation, while for light ion, crystallinity remained at the highest fluence used in the experiment. The irradiation-induced damage is characterized by the formation of defect clusters, elastic strain, surface deformation, as well as change in elemental composition. In particular, the presence of nanometric-scale damage pockets results in increased RBS/C backscattered signal and the appearance of normally forbidden Raman phonon modes. The location of the highest density of damage is in good agreement with SRIM calculations. (author)« less

  17. Improved performance rhenium containing single crystal alloy turbine blades utilizing ppm levels of the highly reactive elements lanthanum and yttrium

    SciTech Connect (OSTI)

    Ford, D.A.; Fullagar, K.P.L.; Bhangu, H.K. [Rolls-Royce PLC, Bristol (United Kingdom); Thomas, M.C.; Burkholder, P.S.; Korinko, P.S. [Allison Engine Co., Indianapolis, IN (United States); Harris, K.; Wahl, J.B. [Cannon-Muskegon Corp., MI (United States)

    1999-01-01

    Turbine inlet temperatures have now approached 1650 C at maximum power for the latest large commercial turbofan engines, resulting in high fuel efficiency and thrust levels approaching or exceeding 445 kN (100,000 lbs.). High reliability and durability must be intrinsically designed into these turbine engines to meet operating economic targets and ETOPS certification requirements. Re additions to cast airfoil superalloys not only improve creep and thermomechanical fatigue strength but also environmental properties, including coating performance. It is now known that sulfur (S) at levels <10 ppm but >0.2 ppm in these alloys reduces the adherence of {alpha} alumina protective scales on these materials or their coatings by weakening the Van der Waal`s bond between the scale and the alloy substrate. A team approach has been used to develop an improvement to CMSX-4 alloy which contains 3% Re, by reducing S and phosphorus (P) levels in the alloy to <2 ppm, combined with residual additions of lanthanum (La) + yttrium (Y) in the range 10--30 ppm. Results from cyclic, burner rig dynamic oxidation testing at 1093 C show thirteen times the number of cycles to initial alumina scale spallation for CMSX-4 [La + Y] compared to standard CMSX-4. The La assists with ppm chemistry control of the Y throughout the single crystal turbine blade castings through the formation of a continuous lanthanum oxide film between the molten and solidifying alloy and the ceramic core and prime coat of the shell mold. Y and La tie up the M2 ppm but >0.2 ppm residual S in the alloy as very stable Y and La sulfides and oxysulfides, thus preventing diffusion of the S atoms to the alumina scale layer under high temperature, cyclic oxidizing conditions. La also forms a stable phosphide. CMSX-4 (ULS) (La + Y) HP shroudless turbine blades will commence engine testing in May 1998.

  18. Synthesis, structure, growth and characterization of a novel organic NLO single crystal: Morpholin-4-ium p-aminobenzoate

    SciTech Connect (OSTI)

    Shanmugam, G.; Ravi Kumar, K.; Sridhar, B.; Brahadeeswaran, S.

    2012-09-15

    Highlights: ? A new organic NLO crystal morpholin-4-ium p-aminobenzoate has been grown for the first time. ? The structure is reported for the first time in the literature. ? Thermal, optical and SHG studies suggest its suitability for various NLO applications. -- Abstract: The title compound, morpholin-4-ium p-aminobenzoate (MPABA)(C{sub 4}H{sub 10}NO{sup +},C{sub 7}H{sub 6}NO{sub 2}{sup ?}), has been synthesized for the first time by the addition of morpholine with 4-aminobenzoic acid in equi-molar ratio and good quality single crystals have been grown by solution growth technique using methanol as a solvent. The molecular structure of the compound was solved and refined by Direct Methods using SHELXS97 and full-matrix least-squares technique using SHELXL97, respectively. MPABA crystallizes in a monoclinic system with unit cell parameters, a = 5.948(5) ?, b = 18.033(4) ?, c = 10.577(5) ?, ? = 90.40(1)° and non-centrosymmetric space group Cc. The experimentally measured density and chemical compositions were found to be in good agreement with the theoretical values. The phases and functional groups of MPABA have been identified and confirmed through powder X-ray diffraction and Fourier transform infrared (FTIR) studies, respectively. The thermal stability and decomposition details were studied through TG/DTA thermograms. The UV–visible transmission spectra were recorded for the grown crystal and its NLO characteristic was explored by powder second harmonic generation (SHG) studies.

  19. Dissolution-induced surface modifications and permeability changes associated with fluid flow through an abraded saw-cut in single crystal quartz 

    E-Print Network [OSTI]

    Bowman, James Albert

    1992-01-01

    DISSOLUTION-INDUCED SURFACE MODIFICATIONS AND PERMEABILITY CHANGES ASSOCIATED WITH FLUID FLOW THROUGH AN ABRADED SAW-CUT IN SINGLE CRYSTAL QUARTZ A Thesis by JAlvlES ALBERT BOWMAN, JR, Submined to the Oflice of Graduate Studies of Texas A8r...M University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE Xiay I992 Major Subject: Geology DISSOLUTION-INDUCED SURFACE MODIFICATIONS AND PERMEABILITY CHANGES ASSOCIATED WITH FLUID FLOW THROUGH AN ABRADED SAW...

  20. Shock wave compression of hexagonal-close-packed metal single crystals: Time-dependent, anisotropic elastic-plastic response of beryllium

    SciTech Connect (OSTI)

    Winey, J. M.; Gupta, Y. M.

    2014-07-21

    Understanding and modeling the response of hcp metals to high stress impulsive loading is challenging because the lower crystal symmetry, compared to cubic metals, results in a significantly more complex material response. To gain insight into the inelastic deformation of hcp metals subjected to high dynamic stresses, shock wave compression of single crystals provides a useful approach because different inelastic deformation mechanisms can be examined selectively by shock compression along different crystal orientations. As a representative example, we report, here, on wave propagation simulations for beryllium (Be) single crystals shocked along the c-axis, a-axis, and several low-symmetry directions to peak stresses reaching 7?GPa. The simulations utilized a time-dependent, anisotropic material model that incorporated dislocation dynamics, deformation twinning, and shear cracking based descriptions of inelastic deformation. The simulation results showed good overall agreement with measured wave profiles for all the different crystal orientations examined [Pope and Johnson, J. Appl. Phys. 46, 720 (1975)], including features arising from wave mode coupling due to the highly anisotropic inelastic response of Be. This good agreement demonstrates that the measured profiles can be understood in terms of dislocation slip along basal, prismatic, and pyramidal planes, together with deformation twinning along (101{sup ¯}2) planes. Our results show that the response of shocked Be single crystals involves the simultaneous operation of multiple, distinct inelastic deformation mechanisms for all orientations except the c-axis. For shocked c-axis Be, the measured wave profiles do not provide good discrimination between pyramidal slip and other inelastic deformation mechanisms, such as shear cracking. The findings presented here provide insight into the complex inelastic deformation response of shocked Be single crystals and are expected to be useful for other hcp crystals. More broadly, the present work demonstrates the potential of shock wave propagation along low-symmetry directions to examine, and discriminate between, different inelastic deformation mechanisms in crystalline solids.

  1. Measurement of the Young's modulus and internal friction of single crystal and polycrystalline copper, and copper-graphite composites as a function of temperature and orientation 

    E-Print Network [OSTI]

    Wickstrom, Steven Norman

    1988-01-01

    MEASUREMENT OF THE YOUNG'S MODULUS AND INTERNAL FRICTION OF SINGLE CRYSTAL AND POLYCRYSTALLINE COPPER, AND COPPER- GRAPHITE COMPOSITES AS A FUNCTION OF TEMPERATURE AND ORIENTATION A Thesis by S teven Norman Wicks trom Submitted... AND POLYCRYSTALLINE COPPER, AND COPPER- GRAPHITE COMPOSITES AS A FUNCTION OF TEMPERATURE AND ORIENTATION A Thesis by Steven Norman Wickstrom Approved as to style and content by: A(J ~a Alan Wolfenden (Chairman of Committee) Don E. Bray (Member) Donald G...

  2. Resolution of the discrepancy between the variation of the physical properties of Ce1-xYbxCoIn5 single crystals and thin films with Yb composition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jang, S.; White, B. D.; Lum, I. K.; Kim, H.; Tanatar, M. A.; Straszheim, W. E.; Prozorov, R.; Keiber, T.; Bridges, F.; Shu, L.; et al

    2014-11-18

    The extraordinary electronic phenomena including an Yb valence transition, a change in Fermi surface topology, and suppression of the heavy fermion quantum critical field at a nominal concentration 0.2 have been found in the system. These phenomena have no discernable effect on the unconventional superconductivity and normal-state non-Fermi liquid behaviour that occur over a broad range of up to 0.8. However, the variation of the coherence temperature and the superconducting critical temperature with nominal Yb concentration for bulk single crystals is much weaker than that of thin films. To determine whether differences in the actual Yb concentration of bulk singlemore »crystals and thin film samples might be responsible for these discrepancies, we employed Vegard’s law and the spectroscopically determined values of the valences of Ce and Yb as a function of to determine the actual composition of bulk single crystals. This analysis is supported by energy-dispersive X-ray spectroscopy, wavelength-dispersive X-ray spectroscopy, and transmission X-ray absorption edge spectroscopy measurements. The actual composition is found to be about one-third of the nominal concentration up to 0.5, and resolves the discrepancy between the variation of the physical properties of single crystals and thin films with Yb concentration.« less

  3. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 13, NO. 5, OCTOBER 2004 715 Nonlinear Limits for Single-Crystal

    E-Print Network [OSTI]

    Kaajakari, Ville

    with the focus on mechanical nonlinearities. The bulk acoustic wave (BAW) resonators are shown to have orders-of-magnitude higher energy storage capability than flex- ural beam resonators. The bifurcation point for the silicon material limit. The importance of nonlinearities in setting the limit for vibration energy storage

  4. Powerful, Efficient Electric Vehicle Chargers: Low-Cost, Highly-Integrated Silicon Carbide (SiC) Multichip Power Modules (MCPMs) for Plug-In Hybrid Electric

    SciTech Connect (OSTI)

    2010-09-14

    ADEPT Project: Currently, charging the battery of an electric vehicle (EV) is a time-consuming process because chargers can only draw about as much power from the grid as a hair dryer. APEI is developing an EV charger that can draw as much power as a clothes dryer, which would drastically speed up charging time. APEI's charger uses silicon carbide (SiC)-based power transistors. These transistors control the electrical energy flowing through the charger's circuits more effectively and efficiently than traditional transistors made of straight silicon. The SiC-based transistors also require less cooling, enabling APEI to create EV chargers that are 10 times smaller than existing chargers.

  5. Floating Silicon Method

    SciTech Connect (OSTI)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  6. A silicon electromechanical photodetector

    E-Print Network [OSTI]

    Tallur, Siddharth

    2013-01-01

    Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon micro-resonator, which converts near-IR optical intensity modulation at 174.2MHz and 1.198GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors.

  7. Electronic stiffness of a superconducting niobium nitride single crystal under pressure Xiao-Jia Chen, Viktor V. Struzhkin, Zhigang Wu, Ronald E. Cohen, Simon Kung,* Ho-kwang Mao, and Russell J. Hemley

    E-Print Network [OSTI]

    Wu, Zhigang

    Electronic stiffness of a superconducting niobium nitride single crystal under pressure Xiao report a quantitative study of pressure effects on the superconducting transition temperature Tc transition temperatures Tc's of materials, pur- suing new classes of superconductors and shedding light

  8. High sensitivity gravimetric sensor made of carbon fiber epoxy composite on Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystal substrate

    E-Print Network [OSTI]

    Cao, Wenwu

    in liquids and gases for biochemical applications and gas contamination detections.1,2 It is known that Love-PT piezoelectric single crystal materials have been developed, including Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) single crystals, whose piezoelectric effect is five times as high as that of Pb(Ti,Zr)O3 (PZT) piezoelectric

  9. Memory effect in 001 poled 0.92Pb,,Zn1/3Nb2/3...O30.08PbTiO3 single crystals

    E-Print Network [OSTI]

    Cao, Wenwu

    Memory effect in 001 poled 0.92Pb,,Zn1/3Nb2/3...O3­0.08PbTiO3 single crystals Mingrong Shen and pyroelectric measurements in 001 poled rhombohedral phase 0.92Pb Zn1/3Nb2/3 O3­0.08PbTiO3 single crystals from room temperature to 250 °C. An interesting poling history dependence has been revealed from

  10. Complete set of elastic, dielectric, and piezoelectric coefficents of 0.93Pb,,Zn1/3Nb2/3...O30.07PbTiO3 single crystal poled along 011

    E-Print Network [OSTI]

    Cao, Wenwu

    ­0.07PbTiO3 single crystal poled along 011 Rui Zhang Department of Physics, Harbin Institute of Technology, and piezoelectric coefficients of rhomboheral phase 0.93Pb Zn1/3Nb2/3 O3­0.07PbTiO3 single crystal poled along 011 boundary MPB exhibit superior electromechani- cal properties at room temperature when being poled along

  11. In situ dehydration behavior of zeolite-like pentagonite: A single-crystal X-ray study

    SciTech Connect (OSTI)

    Danisi, Rosa Micaela; Armbruster, Thomas; Lazic, Biljana

    2013-01-15

    The structural modifications upon heating of pentagonite, Ca(VO)(Si{sub 4}O{sub 10}){center_dot}4H{sub 2}O (space group Ccm2{sub 1}, a=10.3708(2), b=14.0643(2), c=8.97810(10) A, V=1309.53(3) A{sup 3}) were investigated by in situ temperature dependent single-crystal X-ray structure refinements. Diffraction data of a sample from Poona district (India) have been measured in steps of 25 up to 250 Degree-Sign C and in steps of 50 Degree-Sign C between 250 and 400 Degree-Sign C. Pentagonite has a porous framework structure made up by layers of silicate tetrahedra connected by V{sup 4+}O{sub 5} square pyramids. Ca and H{sub 2}O molecules are extraframework occupants. Room temperature diffraction data allowed refinement of H positions. The hydrogen-bond system links the extraframework occupants to the silicate layers and also interconnects the H{sub 2}O molecules located inside the channels. Ca is seven-fold coordinated forming four bonds to O of the tetrahedral framework and three bonds to extraframework H{sub 2}O. The H{sub 2}O molecule at O9 showing a high displacement parameter is not bonded to Ca. The dehydration in pentagonite proceeds in three steps. At 100 Degree-Sign C the H{sub 2}O molecule at O8 was released while O9 moved towards Ca. As a consequence the displacement parameter of H{sub 2}O at O9 halved compared to that at room temperature. The unit-cell volume decreased to 1287.33(3) A{sup 3} leading to a formula with 3H{sub 2}O per formula unit (pfu). Ca remained seven-fold coordinated. At 175 Degree-Sign C Ca(VO)(Si{sub 4}O{sub 10}){center_dot}3H{sub 2}O transformed into a new phase with 1H{sub 2}O molecule pfu characterized by doubling of the c axis and the monoclinic space group Pn. Severe bending of specific T--O--T angles led to contraction of the porous three-dimensional framework. In addition, H{sub 2}O at O9 was expelled while H{sub 2}O at O7 approached a position in the center of the channel. The normalized volume decreased to 1069.44(9) A{sup 3}. The Ca coordination reduced from seven- to six-fold. At 225 Degree-Sign C a new anhydrous phase with space group Pna2{sub 1} but without doubling of c had formed. Release of H{sub 2}O at O7 caused additional contraction of T--O--T angles and volume reduction (V=1036.31(9) A{sup 3}). Ca adopted five-fold coordination. During heating excursion up to 400 Degree-Sign C this anhydrous phase remained preserved. Between room temperature and 225 Degree-Sign C the unit-cell volume decreased by 21% due to dehydration. The dehydration steps compare well with the thermo-gravimetric data reported in the literature. - Graphical abstract: Pentagonite structure at room temperature and at 225 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer We investigate the relationship between the removal of H{sub 2}O molecules and structural modifications of the framework of pentagonite. Black-Right-Pointing-Pointer Pentagonite undergoes phase transitions upon heating. Black-Right-Pointing-Pointer We analyze similarities and differences between pentagonite and related structures.

  12. Rabi Waves and Peculiarities of Raman Scattering in Carbon Nanotubes, Produced by High Energy Ion Beam Modification of Diamond Single Crystals

    E-Print Network [OSTI]

    Dmitry Yearchuck; Alla Dovlatova

    2011-03-06

    QED-model for multichain coupled qubit system, proposed in \\cite{Part1}, was confirmed by Raman scattering studies of carbon zigzag-shaped nanotubes, produced by high energy ion beam modification of natural diamond single crystals. New quantum optics phenomenon - Rabi waves - has been experimentally identified for the first time. Raman spectra in perfect quasi-1D carbon nanotubes are quite different in comparison with well known Raman spectra in 2D carbon nanotubes of larger diameter. They characterized by vibronic mode of Su-Schriffer-Heeger $\\sigma$-polaron lattice and its revival part in frequency representation, which is the consequence of Rabi wave packet formation.

  13. Epitaxial growth of fcc-Co{sub x}Ni{sub 100-x} thin films on MgO(110) single-crystal substrates

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-12-15

    Co{sub x}Ni{sub 100-x} (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co{sub x}Ni{sub 100-x} film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co{sub x}Ni{sub 100-x} films are in agreement within +-0.5% with the values of the respective bulk Co{sub x}Ni{sub 100-x} crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110){sub fcc} film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

  14. Magnetic Field Induced Phase Transitions in Gd5(Si1.95Ge2.05)Single Crystal and the Anisotropic Magnetocaloric Effect

    SciTech Connect (OSTI)

    H. Tang; V.K. Pecharsky; A.O. Pecharsky; D.L. Schlagel; T.A. Lograsso; K.A. Gschneidner,jr.

    2004-09-30

    The magnetization measurements using a Gd{sub 5}(Si{sub 1.95}Ge{sub 2.05}) single crystal with the magnetic field applied along three crystallographic directions, [001], [010] and [100], were carried out as function of applied field (0-56 kOe) at various temperatures ({approx}5-320 K). The magnetic-field induced phase transformations at temperature above the zero-field critical temperature, i.e. the paramagnetic (PM) {leftrightarrow} ferromagnetic (FM) transitions with application or removal of magnetic field, are found to be temperature dependent and hysteretic. The corresponding critical fields increase with increasing temperature. The magnetic field (H)-temperature (T) phase diagrams have been constructed for the Gd{sub 5}(Si{sub 1.95}Ge{sub 2.05}) single crystal with field along the three directions. A small anisotropy has been observed. The magnetocaloric effect (MCE) has been calculated from the isothermal magnetization data, and the observed anisotropy correlates with H-T phase diagrams. The results are discussed in connection with the magnetic-field induced martensitic-like structural transition observed in the Gd{sub 5}(Si{sub 2}Ge{sub 2})-type compounds.

  15. A Successful Synthesis of the CoCrFeNiAl{sub 0.3} Single-Crystal, High-Entropy Alloy by Bridgman Solidification

    SciTech Connect (OSTI)

    Ma, S. G.; Zhang, S. F.; Gao, M. C.; Liaw, P. K.; Zhang, Y.

    2013-12-01

    For the first time, a face-centered-cubic, single-crystal CoCrFeNiAl{sub 0.3} (designated as Al0.3), high-entropy alloy (HEA) was successfully synthesized by the Bridgman solidification (BS) method, at an extremely low withdrawal velocity through a constant temperature gradient, for which it underwent two BS steps. Specially, at the first BS step, the alloy sample underwent several morphological transitions accompanying the crystal growth from the melt. This microstructure evolves from as-cast dendrites, to equiaxed grains, and then to columnar crystals, and last to the single crystal. In particular, at the equiaxed-grain region, some visible annealing twins were observed, which indicates a low stacking fault energy of the Al0.3 alloy. Although a body-centered- cubic CoCrFeNiAl (Al1) HEA was also prepared under the same conditions, only a single columnar-crystal structure with instinctively preferential crystallographic orientations was obtained by the same procedure. A similar morphological transition from dendrites to equiaxed grains occurred at the equiaxed-grain region in Al1 alloy, but the annealing twins were not observed probably because a higher Al addition leads to a higher stacking fault energy for this alloy.

  16. Modeling and analysis of high-speed electro-optic modulation in high confinement silicon waveguides using metal-oxide-semiconductor

    E-Print Network [OSTI]

    Lipson, Michal

    Engineering, Cornell University, Ithaca, New York 14853 (Received 22 June 2004; accepted 16 September 2004) We modulation. The main methods to alter the refractive index in Si are the thermo-optic effect and the plasma not exhibit linear electro-optic (Pockels) effect and the refractive index changes due to the Franz

  17. Light Emission in Silicon from Carbon Nanotubes

    E-Print Network [OSTI]

    Gaufrès, Etienne; Noury, Adrien; Roux, Xavier Le; Rasigade, Gilles; Beck, Alexandre; Vivien, Laurent

    2015-01-01

    The use of optics in microelectronic circuits to overcome the limitation of metallic interconnects is more and more considered as a viable solution. Among future silicon compatible materials, carbon nanotubes are promising candidates thanks to their ability to emit, modulate and detect light in the wavelength range of silicon transparency. We report the first integration of carbon nanotubes with silicon waveguides, successfully coupling their emission and absorption properties. A complete study of this coupling between carbon nanotubes and silicon waveguides was carried out, which led to the demonstration of the temperature-independent emission from carbon nanotubes in silicon at a wavelength of 1.3 {\\mu}m. This represents the first milestone in the development of photonics based on carbon nanotubes on silicon.

  18. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    SciTech Connect (OSTI)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450?°C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18??m long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  19. Search for WW and WZ production in lepton, neutrino plus jets final states at CDF Run II and Silicon module production and detector control system for the ATLAS SemiConductor Tracker

    SciTech Connect (OSTI)

    Sfyrla, Anna; /Geneva U.

    2008-03-01

    In the first part of this work, we present a search for WW and WZ production in charged lepton, neutrino plus jets final states produced in p{bar p} collisions with {radical}s = 1.96 TeV at the Fermilab Tevatron, using 1.2 fb{sup -1} of data accumulated with the CDF II detector. This channel is yet to be observed in hadron colliders due to the large singleWplus jets background. However, this decay mode has a much larger branching fraction than the cleaner fully leptonic mode making it more sensitive to anomalous triple gauge couplings that manifest themselves at higher transverse W momentum. Because the final state is topologically similar to associated production of a Higgs boson with a W, the techniques developed in this analysis are also applicable in that search. An Artificial Neural Network has been used for the event selection optimization. The theoretical prediction for the cross section is {sigma}{sub WW/WZ}{sup theory} x Br(W {yields} {ell}{nu}; W/Z {yields} jj) = 2.09 {+-} 0.14 pb. They measured N{sub Signal} = 410 {+-} 212(stat) {+-} 102(sys) signal events that correspond to a cross section {sigma}{sub WW/WZ} x Br(W {yields} {ell}{nu}; W/Z {yields} jj) = 1.47 {+-} 0.77(stat) {+-} 0.38(sys) pb. The 95% CL upper limit to the cross section is estimated to be {sigma} x Br(W {yields} {ell}{nu}; W/Z {yields} jj) < 2.88 pb. The second part of the present work is technical and concerns the ATLAS SemiConductor Tracker (SCT) assembly phase. Although technical, the work in the SCT assembly phase is of prime importance for the good performance of the detector during data taking. The production at the University of Geneva of approximately one third of the silicon microstrip end-cap modules is presented. This collaborative effort of the university of Geneva group that lasted two years, resulted in 655 produced modules, 97% of which were good modules, constructed within the mechanical and electrical specifications and delivered in the SCT collaboration for assembly on the end-cap disks. The SCT end-caps and barrels consist of 4088 silicon modules, with a total of 6.3 million readout channels. The coherent and safe operation of the SCT during commissioning and subsequent operation is the essential task of the Detector Control System (DCS). The main building blocks of the DCS are the cooling system, the power supplies and the environmental system. The DCS has been initially developed for the SCT assembly phase and this system is described in the present work. Particular emphasis is given in the environmental hardware and software components, that were my major contributions. Results from the DCS testing during the assembly phase are also reported.

  20. Module Handbook Module title

    E-Print Network [OSTI]

    . Students learn about selected topics from inorganic chemistry, biochemistry, materials chemistryModule Handbook Module title Module title in English Credits Degree of compulsion Level Learning Theory of Functional Materials 6 Compulsory Basic A systematic foundation for quantum physics

  1. Station for X-ray structural analysis of materials and single crystals (including nanocrystals) on a synchrotron radiation beam from the wiggler at the Siberia-2 storage ring

    SciTech Connect (OSTI)

    Kheiker, D. M. Kovalchuk, M. V.; Korchuganov, V. N.; Shilin, Yu. N.; Shishkov, V. A.; Sulyanov, S. N.; Dorovatovskii, P. V.; Rubinsky, S. V.; Rusakov, A. A.

    2007-11-15

    The design of the station for structural analysis of polycrystalline materials and single crystals (including nanoobjects and macromolecular crystals) on a synchrotron radiation beam from the superconducting wiggler of the Siberia-2 storage ring is described. The wiggler is constructed at the Budker Institute of Nuclear Physics of the Siberian Division of the Russian Academy of Sciences. The X-ray optical scheme of the station involves a (1, -1) double-crystal monochromator with a fixed position of the monochromatic beam and a sagittal bending of the second crystal, segmented mirrors bent by piezoelectric motors, and a (2{theta}, {omega}, {phi}) three-circle goniometer with a fixed tilt angle. Almost all devices of the station are designed and fabricated at the Shubnikov Institute of Crystallography of the Russian Academy of Sciences. The Bruker APEX11 two-dimensional CCD detector will serve as a detector in the station.

  2. Single crystal plastic behavior of a single-phase, face-center-cubic-structured, equiatomic FeNiCrCo alloy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, Zhenggang; Gao, Y. F.; Bei, Hongbin

    2015-07-25

    To understand the fundamental deformation mechanisms of compositionally complex alloys, single crystals of a multi-component equiatomic FeNiCoCr alloy with face-centered cubic (FCC) structure were grown for mechanical studies. Similarly to typical FCC pure metals, slip trace analyses indicate that dislocation slips take place on (1 1 1) planes along [11¯0] directions. The critical resolved shear stress (CRSS) obeys the Schmid law at both 77 and 293 K, and tension–compression asymmetry is not observed. Although this material slips in a normal FCC manner both at 293 and 77 K, compared to typical FCC metals the CRSS’s strong temperature dependence is abnormal.

  3. Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shen, Xuan; Yamada, Tomoaki; Lin, Ruoqian; Kamo, Takafumi; Funakubo, Hiroshi; Wu, Di; Xin, Huolin L.; Su, Dong

    2015-10-08

    In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO3 films grown on (111)-oriented SrTiO3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a comprised of a misfit dislocation along , and threading dislocations along or . The misfit dislocation with Burgers vector of a can dissociate into two ½ a partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrievedmore »the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba0.7Sr0.3)TiO3 films.« less

  4. Insulating and metallic spin glass in KxFe2-?-yNiySe2 (0.06 ? y ? 1.44 ) single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Abeykoon, Milinda; Wang, Kefeng; Lei, Hechang; Lazarevic, N.; Warren, J. B.; Bozin, E. S.; Popovic, Z. V.; Petrovic, C.

    2015-05-04

    We report electron doping effects by Ni in KxFe2-?-yNiySe? (0.06 ? y ? 1.44) single crystal alloys. A rich ground state phase diagram is observed. Thus, a small amount of Ni (~ 4%) suppressed superconductivity below 1.8 K, inducing insulating spin glass magnetic ground state for higher Ni content. With further Ni substitution, metallic resistivity is restored. For high Ni concentration in the lattice the unit cell symmetry is high symmetry I4/mmm with no phase separation whereas both I4/m + I4/mmm space groups were detected in the phase separated crystals when concentration of Ni more »coincides with the absence of crystalline Fe vacancy order.« less

  5. Bridgman Growth of Large SrI2:Eu2+ Single Crystals: A High-performance Scintillator for Radiation Detection Applications

    SciTech Connect (OSTI)

    Boatner, Lynn A; Ramey, Joanne Oxendine; Kolopus, James A; Hawrami, Rastgo; Higgins, William; Van Loef, Edgar; Glodo, J.; Shah, Kanai; Bhattacharya, P.; Tupitsyn, E; Groza, Michael; Burger, Arnold

    2013-01-01

    Single-crystal strontium iodide (SrI2) doped with relatively high levels (e.g., 3 - 6 %) of Eu2+ exhibits characteristics that make this material superior, in a number of respects, to other scintillators that are currently used for radiation detection. Specifically, SrI2:Eu2+ has a light yield that is significantly higher than LaBr3:Ce3+ -a currently employed commercial high-performance scintillator. Additionally, SrI2:Eu2+ is characterized by an energy resolution as high as 2.6% at the 137Cs gamma-ray energy of 662 keV, and there is no radioactive component in SrI2:Eu2+ - unlike LaBr3:Ce3+ that contains 138La. The Ce3+-doped LaBr3 decay time is, however, faster (30 nsec) than the 1.2 sec decay time of SrI2:Eu2+. Due to the relatively low melting point of strontium iodide (~515 oC), crystal growth can be carried out in quartz crucibles by the vertical Bridgman technique. Materials-processing and crystal-growth techniques that are specific to the Bridgman growth of europium-doped strontium iodide scintillators are described here. These techniques include the use of a porous quartz frit to physically filter the molten salt from a quartz antechamber into the Bridgman growth crucible and the use of a bent or bulb grain selector design to suppress multiple grain growth. Single crystals of SrI2:Eu2+ scintillators with good optical quality and scintillation characteristics have been grown in sizes up to 5.0 cm in diameter by applying these techniques. Other aspects of the SrI2:Eu2+ crystal-growth methods and of the still unresolved crystal-growth issues are described here.

  6. Nonlinear-optical and structural properties of nanocrystalline silicon carbide films

    SciTech Connect (OSTI)

    Brodyn, M. S.; Volkov, V. I. Lyakhovetskii, V. R.; Rudenko, V. I.; Puzilkov, V. M.; Semenov, A. V.

    2012-02-15

    The aim of this study is to investigate the nonlinearity of refraction in nanostructured silicon carbide films depending on their structural features (synthesis conditions for such films, substrate temperature during their deposition, concentration of the crystalline phase in the film, Si/C ratio of atomic concentrations in the film, and size of SiC nanocrystals formed in the film). The corresponding dependences are obtained, as well as the values of nonlinear-optical third-order susceptibility {chi}{sup (3)}({omega}; {omega}, -{omega}, {omega}) for various silicon polytypes (3C, 21R, and 27R) which exceed the value of {chi}{sup (3)} in bulk silicon carbide single crystals by four orders of magnitude.

  7. Seventh workshop on the role of impurities and defects in silicon device processing

    SciTech Connect (OSTI)

    NONE

    1997-08-01

    This workshop is the latest in a series which has looked at technological issues related to the commercial development and success of silicon based photovoltaic (PV) modules. PV modules based on silicon are the most common at present, but face pressure from other technologies in terms of cell performance and cell cost. This workshop addresses a problem which is a factor in the production costs of silicon based PV modules.

  8. Reciprocal space analysis of the microstructure of luminescent and nonluminescent porous silicon films

    SciTech Connect (OSTI)

    Lee, S.R.; Barbour, J.C.; Medernach, J.W.; Stevenson, J.O.; Custer, J.S.

    1994-12-31

    The microstructure of anodically prepared porous silicon films was determined using a novel X-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive X- ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p{sup {minus}} porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n{sup +} and p{sup +} porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure.

  9. PHONON DISPERSION CURVES OF ORDERED PHASES OF T.B.B.A. Abstract. --The lattice dynamics of a deuterated single crystal of T.B.B.A. have been measured

    E-Print Network [OSTI]

    Boyer, Edmond

    of a deuterated single crystal of T.B.B.A. have been measured by mean of inelastic neutron scattering of the molecules. Previous neutron inelastic scattering measurements have been done on non-deuterated single of a melting of the terminal aliphatic chains. So neutron coherent inelastic scattering measure- ments have

  10. Electromechanical coupling coefficient of 0.70Pb,,Mg1/3Nb2/3...O30.30PbTiO3 single crystal resonator with arbitrary aspect ratio

    E-Print Network [OSTI]

    Cao, Wenwu

    Electromechanical coupling coefficient of 0.70Pb,,Mg1/3Nb2/3...O3­0.30PbTiO3 single crystal Based on mode coupling theory and the fundamental energy ratio definition of the electromechanical coupling coefficient, a unified formula has been derived to calculate the effective electromechanical

  11. Micro benchtop optics by bulk silicon micromachining

    DOE Patents [OSTI]

    Lee, Abraham P. (Walnut Creek, CA); Pocha, Michael D. (Livermore, CA); McConaghy, Charles F. (Livermore, CA); Deri, Robert J. (Pleasanton, CA)

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  12. Germanium-rich silicon-germanium materials for field-effect modular application

    E-Print Network [OSTI]

    Jongthammanurak, Samerkhae

    2008-01-01

    The development of electric-field-induced optical modulation in the materials capable of monolithically integrated on silicon (Si) substrates offer the possibility of high-speed modulation in a pico second timeframe as ...

  13. Heteroepitaxy of single-crystal LaLuO3 on GaAs,,111...A by atomic layer Yiqun Liu,1

    E-Print Network [OSTI]

    lutetium oxide LaLuO3 has been widely studied as an alternative gate dielectric to replace silicon di from the precursors including lanthanum tris N,N -diisopropylformamidinate , lutetium tris N

  14. Intermolecular effects on the radiogenic formation of electron-capture phosphorus-centered radicals. A single-crystal ESR study of diastereoisomeric precursors

    SciTech Connect (OSTI)

    Aagaard, O.M.; Janssen, R.A.J.; de Waal, B.F.M.; Buck, H.M. )

    1990-01-31

    ESR experiments on X-irradiated single crystals of the 2R,4S,5R and 2S,4S,5R diastereoisomers of 2-chloro-3,4-dimethyl-5-phenyl-1,3,2-oxazaphospholidine 2-sulfide reveal that the yield of radiogenic electron-capture reactions in the solid state strongly depends on intermolecular interactions in the crystal. In the present case a high yield of P-Cl three-electron-bond phosphoranyl radical anions is found in crystals of the 2R,4S,5R isomer, whereas no radical formation can be detected for the 2S,4S,5R isomer. An analysis of nonbonded interactions with neighboring molecules reveals that the geometry relaxation necessary for the radical stabilization is easily accommodated in crystals of the 2R,4S,SR isomer but not in the 2S,4S,5R isomer, explaining the observed difference in electron-capture efficiency. Experiments on radical formation in a MeTHF host matrix give further insight into the importance of the environment on radiogenic radical formation. The possible concurrent effect of the matrix on the electronic configuration and spin density distribution of the resulting phosphoranyl radical is discussed.

  15. Octahedral distortion induced magnetic anomalies in LaMn{sub 0.5}Co{sub 0.5}O{sub 3} single crystals

    SciTech Connect (OSTI)

    Manna, Kaustuv Elizabeth, Suja; Anil Kumar, P. S.; Bhadram, Venkata Srinu; Narayana, Chandrabhas

    2014-07-28

    Single crystals of LaMn{sub 0.5}Co{sub 0.5}O{sub 3} belonging to the ferromagnetic-insulator and distorted perovskite class were grown using a four-mirror optical float zone furnace. The as-grown crystal crystallizes into an orthorhombic Pbnm structure. The spatially resolved 2D Raman scan reveals a strain-induced distribution of transition metal (TM)–oxygen (O) octahedral deformation in the as-grown crystal. A rigorous annealing process releases the strain, thereby generating homogeneous octahedral distortion. The octahedra tilt by reducing the bond angle TM-O-TM, resulting in a decline of the exchange energy in the annealed crystal. The critical behavior is investigated from the bulk magnetization. It is found that the ground state magnetic behavior assigned to the strain-free LaMn{sub 0.5}Co{sub 0.5}O{sub 3} crystal is of the 3D Heisenberg kind. Strain induces mean field-like interaction in some sites, and consequently, the critical exponents deviate from the 3D Heisenberg class in the as-grown crystal. The temperature-dependent Raman scattering study reveals strong spin-phonon coupling and the existence of two magnetic ground states in the same crystal.

  16. Multiphoton photoluminescence contrast in switched Mg:LiNbO{sub 3} and Mg:LiTaO{sub 3} single crystals

    SciTech Connect (OSTI)

    Reichenbach, P., E-mail: philipp.reichenbach@iapp.de; Kämpfe, T.; Thiessen, A.; Haußmann, A.; Eng, L. M. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01069 Dresden (Germany); Woike, T. [Institut für Strukturphysik, Technische Universität Dresden, Zellescher Weg 16, 01069 Dresden (Germany)

    2014-09-22

    We observed a multiphoton luminescence contrast between virgin and single-switched domains in Mg-doped LiNbO{sub 3} (LNO) and LiTaO{sub 3} (LTO) single crystals with different doping levels of 0–7?mol. % and 0–8?mol. %, respectively. A luminescence contrast in the range of 3% was measured between as-grown and electrically inverted domain areas in Mg:LNO samples, while the contrast reaches values of up to 30% for the Mg:LTO case. Under annealing, an exponential decay of the domain contrast was observed. The activation energy of about 1?eV being determined for the decay allowed a comparison with reported activation energies of associated defects, clearly illustrating a strong connection between thermal contrast decay and the H{sup +} and Li{sup +}-ion mobility. Finally, performing similar experiments on oxidized samples undoubtedly demonstrated that the origin of the reported luminescence contrast is strongly connected with lithium ions.

  17. SILICON PHOTONIC MICRORING LINKS FOR HIGH-BANDWIDTH-DENSITY,

    E-Print Network [OSTI]

    Bergman, Keren

    /O ................................................................................................................................................................................................................... SILICON PHOTONIC MICRORINGS HAVE DRAWN INTEREST IN RECENT YEARS AS POTENTIAL BUILDING BLOCKS FOR HIGH HIGHLIGHT KEY DEVICE ATTRIBUTES THAT REQUIRE SIGNIFICANT ADVANCEMENT TO REALIZE SUB-PJ/BIT SCALE OPTICAL envelope.1 Researchers have touted silicon microring modulators as ultra-low-power wavelength- division

  18. Thermoelectric performance of silicon nanowires Gang Zhang,1,a

    E-Print Network [OSTI]

    Li, Baowen

    Thermoelectric performance of silicon nanowires Gang Zhang,1,a Qingxin Zhang,1 Cong-Tinh Bui,2 Guo, the thermoelectric performance of silicon nanowires SiNWs is studied. Large cooling temperature is observed which.6 103 W/cm2 is achieved which is about 600 times larger than that of commercial thermoelectric modules

  19. Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    of the photovoltaics market. Currently, the best efficiency of commercial silicon solar modules is around 17Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic://jap.aip.org/authors #12;Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic

  20. Upper critical fields and thermally-activated transport of Nd(0.7Fe0.3) FeAs single crystal

    SciTech Connect (OSTI)

    Balakirev, Fedor F; Jaroszynski, J; Hunte, F; Balicas, L; Jo, Youn - Jung; Raicevic, I; Gurevich, A; Larbalestier, D C; Fang, L; Cheng, P; Jia, Y; Wen, H H

    2008-01-01

    We present measurements of the resistivity and the upper critical field H{sub c2} of Nd(O{sub 0.7}F{sub 0.3})FeAs single crystals in strong DC and pulsed magnetic fields up to 45 T and 60 T, respectively. We found that the field scale of H{sub c2} is comparable to {approx}100 T of high T{sub c} cuprates. H{sub c2}(T) parallel to the c-axis exhibits a pronounced upward curvature similar to what was extracted from earlier measurements on polycrystalline samples. Thus this behavior is indeed an intrinsic feature of oxypnictides, rather than manifestation of vortex lattice melting or granularity. The orientational dependence of H{sub c2} shows deviations from the one-band Ginzburg-Landau scaling. The mass anisotropy decreases as T decreases, from 9.2 at 44K to 5 at 34K. Spin dependent magnetoresistance and nonlinearities in the Hall coefficient suggest contribution to the conductivity from electron-electron interactions modified by disorder reminiscent that of diluted magnetic semiconductors. The Ohmic resistivity measured below T{sub c} but above the irreversibility field exhibits a clear Arrhenius thermally activated behavior over 4--5 decades. The activation energy has very different field dependencies for H{parallel}ab and H{perpendicular}ab. We discuss to what extent different pairing scenarios can manifest themselves in the observed behavior of H{sub c2}, using the two-band model of superconductivity. The results indicate the importance of paramagnetic effects on H{sub c2}(T), which may significantly reduce H{sub c2}(0) as compared to H{sub c2}(0) {approx}200--300 T based on extrapolations of H{sub c2}(T) near T{sub c} down to low temperatures.

  1. Quantum Critical Behavior in the Heavy Fermion Single Crystal Ce(Ni0.935Pd0.065)2Ge2

    SciTech Connect (OSTI)

    Wang, Cuihuan [ORNL; Lawrence, J M [University of California, Irvine; Christianson, Andrew D [ORNL; Chang, S [NIST Center for Neutron Research (NCRN), Gaithersburg, MD; Bauer, E D [Los Alamos National Laboratory (LANL); Gofryk, K [Los Alamos National Laboratory (LANL); Ronning, F [Los Alamos National Laboratory (LANL); Thompson, J D [Los Alamos National Laboratory (LANL); McClellan, K J [Los Alamos National Laboratory (LANL); Rodriguez-Rivera, J A [NCNR and University of Maryland; Lynn, J W [NIST Center for Neutron Research (NCRN), Gaithersburg, MD

    2011-01-01

    We have performed magnetic susceptibility, specific heat, resistivity, and inelastic neutron scattering measurements on a single crystal of the heavy Fermion compound Ce(Ni{sub 0.935}Pd{sup 0.065}){sub 2}Ge{sub 2}, which is believed to be close to a quantum critical point (QCP) at T = 0. At lowest temperature (1.8--3.5 K), the magnetic susceptibility behaves as {chi}(T)-{chi} (0) {proportional_to} T{sup -1/6} with {chi} (0) = 0.032 x 10{sup -6} m{sup 3}/mole (0.0025 emu/mole). For T < 1 K, the specific heat can be fit to the formula {Delta} C/T = {gamma}{sub 0} - T{sup 1/2} with {gamma}{sub 0} of order 700 mJ/mole-K{sup 2}. The resistivity behaves as {rho} = {rho}{sub 0} + AT{sup 3/2} for temperatures below 2 K. This low temperature behavior for {gamma} (T) and {rho} (T) is in accord with the SCR theory of Moriya and Takimoto. The inelastic neutron scattering spectra show a broad peak near 1.5 meV that appears to be independent of Q; we interpret this as Kondo scattering with T{sub K} = 17 K. In addition, the scattering is enhanced near Q=(1/2, 1/2, 0) with maximum scattering at {Delta} E = 0.45 meV{sup -}; we interpret this as scattering from antiferromagnetic fluctuations near the antiferromagnetic QCP.

  2. Metal-semiconductor-transition observed in Bi{sub 2}Ca(Sr, Ba){sub 2}Co{sub 2}O{sub 8+?} single crystals

    SciTech Connect (OSTI)

    Dong, Song-Tao [National Laboratory of Solid State Microstructures and Department of Material Science and Engineering, Nanjing University, Nanjing 210093 (China); Institute of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003 (China); Zhang, Bin-Bin; Zhang, Lun-Yong; Yao, Shu-Hua, E-mail: ybchen@nju.edu.cn, E-mail: shyao@nju.edu.cn; Zhou, Jian; Zhang, Shan-Tao; Gu, Zheng-Bin; Chen, Yan-Feng [National Laboratory of Solid State Microstructures and Department of Material Science and Engineering, Nanjing University, Nanjing 210093 (China); Chen, Y. B., E-mail: ybchen@nju.edu.cn, E-mail: shyao@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

    2014-07-28

    Electrical property evolution of Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+?} single crystals (AE?=?Ca, Sr and Ba) is systematically explored. When AE changes from Ca to Ba, the electrical property of Bi{sub 2}Ca{sub 2}Co{sub 2}O{sub 8+?} and Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+?} demonstrates semiconductor-like properties. But Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} shows the metallic behavior. Analysis of temperature-dependent resistance substantiates that from metallic Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} to semiconductor-like Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+?} can be attributed to Anderson localization. However the semiconductor behaviour of Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+?} and Bi{sub 2}Ca{sub 2}Co{sub 2}O{sub 8+?} is related to electronic correlations effect that is inferred by large negative magnetoresistance (?70%). The theoretical electronic structures and valence X-ray photoemission spectroscopy substantiate that there is a relative large density of state around Fermi level in Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} compared with other two compounds. It suggests that Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} is more apt to be metal in this material system.

  3. Symmetry of piezoelectric (1–x)Pb(Mg1/3Nb2/3)O?-xPbTiO? (x=0.31) single crystal at different length scales in the morphotropic phase boundary region

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, Kyou-Hyun; Payne, David A.; Zuo, Jian-Min

    2012-11-29

    We use probes of three different length scales to examine symmetry of (1–x)Pb(Mg1/3Nb2/3)O?-xPbTiO? (PMN-xPT) single crystals in the morphotropic phase boundary (MPB) region at composition x = 0.31 (PMN-31% PT). On the macroscopic scale, x-ray diffraction (XRD) shows a mixture of strong and weak diffraction peaks of different widths. The closest match to XRD peak data is made with monoclinic Pm (MC) symmetry. On the local scale of a few nanometers, convergent beam electron diffraction (CBED) studies, with a 1.6-nm electron probe, reveal no obvious symmetry. These CBED experimental patterns can be approximately matched with simulations based on monoclinic symmetry,more »which suggests locally distorted monoclinic structure. A monoclinic Cm (MA or MB)-like symmetry could also be obtained from certain regions of the crystal by using a larger electron probe size of several tens of nanometers in diameter. Thus the monoclinic symmetry of single crystal PMN-31%PT is developed only in parts of the crystal by averaging over locally distorted structure on the scale of few tens of nanometers. The macroscopic symmetry observed by XRD is a result of averaging from the local structure in PMN-31%PT single crystal. The lack of local symmetry at a few nanometers scale suggests that the polarization switching results from a change in local displacements, which are not restricted to specific symmetry planes or directions.« less

  4. Versatile module for experiments with focussing neutron guides

    SciTech Connect (OSTI)

    Adams, T.; Pfleiderer, C.; Böni, P. [Physik-Department, Technische Universität München, D-85748 Garching (Germany); Brandl, G.; Chacon, A.; Wagner, J. N.; Rahn, M.; Mühlbauer, S.; Georgii, R. [Physik-Department, Technische Universität München, D-85748 Garching (Germany); Heinz Maier-Leibnitz Zentrum, FRM II, Technische Universität München, D-85748 Garching (Germany)

    2014-09-22

    We report the development of a versatile module that permits fast and reliable use of focussing neutron guides under varying scattering angles. A simple procedure for setting up the module and neutron guides is illustrated by typical intensity patterns to highlight operational aspects as well as typical parasitic artefacts. Combining a high-precision alignment table with separate housings for the neutron guides on kinematic mounts, the change-over between neutron guides with different focussing characteristics requires no readjustments of the experimental setup. Exploiting substantial gain factors, we demonstrate the performance of this versatile neutron scattering module in a study of the effects of uniaxial stress on the domain populations in the transverse spin density wave phase of single crystal Cr.

  5. Advances in amorphous silicon photovoltaic technology

    SciTech Connect (OSTI)

    Carlson, D.E.; Rajan, K.; Arya, R.R.; Willing, F.; Yang, L.

    1998-10-01

    With the advent of new multijunction thin film solar cells, amorphous silicon photovoltaic technology is undergoing a commercial revival with about 30 megawatts of annual capacity coming on-line in the next year. These new {ital a}{endash}Si multijunction modules should exhibit stabilized conversion efficiencies on the order of 8{percent}, and efficiencies over 10{percent} may be obtained in the next several years. The improved performance results from the development of amorphous and microcrystalline silicon alloy films with improved optoelectronic properties and from the development of more efficient device structures. Moreover, the manufacturing costs for these multijunction modules using the new large-scale plants should be on the order of {dollar_sign}1 per peak watt. These new modules may find widespread use in solar farms, photovoltaic roofing, as well as in traditional remote applications. {copyright} {ital 1998 Materials Research Society.}

  6. Crystallographic, electronic, thermal, and magnetic properties of single-crystal SrCo2As2

    SciTech Connect (OSTI)

    Pandey, Abhishek; Quirinale, D. G.; Jayasekara, W.; Sapkota, A.; Kim, M. G.; Dhaka, R. S.; Lee, Y.; Heitmann, T. W.; Stephens, P. W.; Ogloblichev, V.; Kreyssig, A.; McQueeney, R. J.; Goldman, A. I.; Kaminski, Adam; Harmon, B. N.; Furukawa, Y.; Johnston, D. C.

    2013-07-01

    In tetragonal SrCo2As2 single crystals, inelastic neutron scattering measurements demonstrated that strong stripe-type antiferromagnetic (AFM) correlations occur at a temperature T = 5 K [W. Jayasekara et al., arXiv:1306.5174] that are the same as in the isostructural AFe2As2 (A = Ca, Sr, Ba) parent compounds of high-Tc superconductors. This surprising discovery suggests that SrCo2As2 may also be a good parent compound for high-Tc superconductivity. Here, structural and thermal expansion, electrical resistivity ?, angle-resolved photoemission spectroscopy (ARPES), heat capacity Cp, magnetic susceptibility ?, 75As NMR and neutron diffraction measurements of SrCo2As2 crystals are reported together with LDA band structure calculations that shed further light on this fascinating material. The c-axis thermal expansion coefficient ?c is negative from 7 to 300 K, whereas ?a is positive over this T range. The ?(T) shows metallic character. The ARPES measurements and band theory confirm the metallic character and in addition show the presence of a flat band near the Fermi energy EF. The band calculations exhibit an extremely sharp peak in the density of states D(EF) arising from a flat dx2-y2 band. A comparison of the Sommerfeld coefficient of the electronic specific heat with ?(T ? 0) suggests the presence of strong ferromagnetic itinerant spin correlations which on the basis of the Stoner criterion predicts that SrCo2As2 should be an itinerant ferromagnet, in conflict with the magnetization data. The ?(T) does have a large magnitude, but also exhibits a broad maximum at 115 K suggestive of dynamic short-range AFM spin correlations, in agreement with the neutron scattering data. The measurements show no evidence for any type of phase transition between 1.3 and 300 K and we propose that metallic SrCo2As2 has a gapless quantum spin-liquid ground state.

  7. Valence-band UPS, 6p core-level XPS, and LEED of a uranium (001) single crystal C. P. Opeil, R. K. Schulze, M. E. Manley, J. C. Lashley, W. L. Hults, R. J. Hanrahan, Jr., and J. L. Smith

    E-Print Network [OSTI]

    Mihaila, Bogdan

    Valence-band UPS, 6p core-level XPS, and LEED of a uranium (001) single crystal C. P. Opeil, R. K energy electron diffraction LEED for the 001 surface, we find a well-ordered orthorhombic

  8. Single crystalline mesoporous silicon nanowires

    E-Print Network [OSTI]

    Hochbaum, A.I.

    2010-01-01

    effects in highly porous crystalline silicon, Nature 1991,J. , Fabrication of single-crystalline silicon nanowires bySingle crystalline mesoporous silicon nanowires Allon I.

  9. Single crystalline mesoporous silicon nanowires

    E-Print Network [OSTI]

    Hochbaum, Allon

    2010-01-01

    Quantum Dots: A General crystalline silicon, Nature 1991,1998, 31, 1927-1949. single-crystalline silicon nanowires byof their facilities. Single crystalline mesoporous silicon

  10. Purified silicon production system

    DOE Patents [OSTI]

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  11. Process for producing silicon

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Carleton, Karen L. (Boulder, CO)

    1984-01-01

    A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  12. Process for producing silicon

    DOE Patents [OSTI]

    Olson, J.M.; Carleton, K.L.

    1982-06-10

    A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  13. Electrodeposition of molten silicon

    DOE Patents [OSTI]

    De Mattei, Robert C. (Sunnyvale, CA); Elwell, Dennis (Palo Alto, CA); Feigelson, Robert S. (Saratoga, CA)

    1981-01-01

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

  14. Epitaxial single-crystal thin films of MnxTi1-xO2-? grown on (rutile)TiO2 substrates with pulsed laser deposition: Experiment and theory

    SciTech Connect (OSTI)

    Ilton, Eugene S.; Droubay, Timothy C.; Chaka, Anne M.; Kovarik, Libor; Varga, Tamas; Arey, Bruce W.; Kerisit, Sebastien N.

    2015-02-01

    Epitaxial rutile-structured single-crystal MnxTi1-xO2-? films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400oC and PO2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or tetrahedral interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the ?-MnO2 lattice parameters to those of TiO2-rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways.

  15. Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-23

    The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

  16. Glass-silicon column

    DOE Patents [OSTI]

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  17. ZnO buffer layer for metal films on silicon substrates

    SciTech Connect (OSTI)

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  18. Determination of W boson helicity fractions in top quark decays in p anti-p collisions at CDF Run II and production of endcap modules for the ATLAS Silicon Tracker

    SciTech Connect (OSTI)

    Moed, Shulamit; /Geneva U.

    2007-01-01

    The thesis presented here includes two parts. The first part discusses the production of endcap modules for the ATLAS SemiConductor Tracker at the University of Geneva. The ATLAS experiment is one of the two multi-purpose experiments being built at the LHC at CERN. The University of Geneva invested extensive efforts to create an excellent and efficient module production site, in which 655 endcap outer modules were constructed. The complexity and extreme requirements for 10 years of LHC operation with a high resolution, high efficiency, low noise tracking system resulted in an extremely careful, time consuming production and quality assurance of every single module. At design luminosity about 1000 particles will pass through the tracking system each 25 ns. In addition to requiring fast tracking techniques, the high particle flux causes significant radiation damage. Therefore, modules have to be constructed within tight and accurate mechanical and electrical specification. A description of the ATLAS experiment and the ATLAS Semiconductor tracker is presented, followed by a detailed overview of the module production at the University of Geneva. My personal contribution to the endcap module production at the University of Geneva was taking part, together with other physicists, in selecting components to be assembled to a module, including hybrid reception tests, measuring the I-V curve of the sensors and the modules at different stages of the production, thermal cycling the modules and performing electrical readout tests as an initial quality assurance of the modules before they were shipped to CERN. An elaborated description of all of these activities is given in this thesis. At the beginning of the production period the author developed a statistics package which enabled us to monitor the rate and quality of the module production. This package was then used widely by the ATLAS SCT institutes that built endcap modules of any type, and kept being improved and updated. The production monitoring and summary using this package is shown in this thesis. The second part of the thesis reports a measurement of the fraction of longitudinal and right-handed helicity states of W bosons in top quark decays. This measurement was done using 955 pb{sup -1} of data collected with the CDF detector at the TEvatron, where protons and anti-protons are collided with a center-of-mass energy of 1.96 TeV. the helicity fraction measurements take advantage of the fact that the angular distribution of the W boson decay products depends on the helicity state of the W which they originate from. They analyze t{bar t} events in the 'lepton+jets' channel and look at the leptonic side of decay. They construct templates for the distribution of cos{theta}*, the angle between the charged lepton and the W flight direction in the rest frame of the top quark. Using Monte Carlo techniques, they construct probability distributions ('templates') for cos{theta}* in the case of left-handed, longitudinal and right-handed Ws and a template for the background model. They extract the W helicity fractions using an unbinned likelihood fitter based on the information of these templates. The Standard Model predicts the W helicity fractions to be about 70% longitudinal and 30% left-handed, while the fraction of right-handed W bosons in top decays is highly suppressed and vanishes when neglecting the mass of the b quark.

  19. Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells

    E-Print Network [OSTI]

    Powell, Douglas M. (Douglas Michael)

    2014-01-01

    Reducing material use is a major driver for cost reduction of crystalline silicon photovoltaic modules. The dominant wafer fabrication process employed in the industry today, ingot casting & sawing, wastes approximately ...

  20. Preparation of silicon substrates for gallium-arsenide solar cells by electron-beam-pulse processing. Annual technical report, March 15, 1980-March 15, 1981

    SciTech Connect (OSTI)

    Tobin, S.P.

    1981-05-01

    In the past year a process has been developed for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency GaAs solar cells on low-cost silicon substrates in an economical manner. Thin (less than or equal to 1 ..mu..m) layers of Ge have been deposited on Si wafers by chemical vapor deposition (CVD) in single-crystal form or by vacuum evaporation in amorphous or polycrystalline form. The CVD films have given the best results, with good crystallinity and electrical properties as deposited. A persistent problem with surface roughness in the as-deposited films has been overcome by pulsed electron beam melting of the near-surface region in time periods on the order of a microsecond. The brief molten period smooths the surface features without compromising the crystallinity, electrical properties, or interfacial abruptness of the Ge film. These layers are of a quality suitable for further evaluation by GaAs growth and cell processing in the next phase of the program. Pulsed electron beam processing also serves a vital function for the evaporated Ge films, which are melted by the beam and recrystallized on the Si substrates, epitaxial single crystal Ge layers result from amorphous or polycrystalline starting films. To date results have not been as satisfactory as for CVD films; contamination from several sources has been identified as a problem. Many of these sources have been eliminated, so that a decision on the intrinsic limitations of the evaporated film approach should be made in the near future.

  1. Silicon rich nitride for silicon based laser devices

    E-Print Network [OSTI]

    Yi, Jae Hyung

    2008-01-01

    Silicon based light sources, especially laser devices, are the key components required to achieve a complete integrated silicon photonics system. However, the fundamental physical limitation of the silicon material as light ...

  2. Silicon micro-mold

    DOE Patents [OSTI]

    Morales, Alfredo M. (Livermore, CA)

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  3. High field magnetotransport and point contact Andreev reflection measurements on CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br—Degenerate magnetic semiconductor single crystals

    SciTech Connect (OSTI)

    Borisov, K. Coey, J. M. D.; Stamenov, P.; Alaria, J.

    2014-05-07

    Single crystals of the metallically degenerate fully magnetic semiconductors CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br have been prepared by the Chemical Vapour Transport method, using either Se or Br as transport agents. The high-quality, millimetre-sized, octahedrally faceted, needle- and platelet-shaped crystals are characterised by means of high field magnetotransport (?{sub 0}H? 14?T) and Point Contact Andreev Reflection. The relatively high spin polarisation observed |P|>0.56, together with the relatively low minority carrier effective mass of 0.25 m{sub e}, and long scattering time  10{sup ?13}?s, could poise these materials for integration in low- and close-to-room temperature minority injection bipolar heterojunction transistor demonstrations.

  4. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, Robert A. (Albuquerque, NM); Seager, Carleton H. (Albuquerque, NM)

    1996-01-01

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  5. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, R.A.; Seager, C.H.

    1996-12-10

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  6. Etching high aspect ratio (110) silicon grooves in CsOH

    SciTech Connect (OSTI)

    Yao, S.; Hesketh, P.J.; Macrander, A.T.

    1995-02-01

    In a previous study the authors developed a fabrication process for a single-crystal silicon X-ray analyzer for use at the Advanced Photon Source, a 6 GeV synchrotron accelerator ring under construction at Argonne National Laboratories. The bent silicon crystal will be used as an analyzer to collect and focus a monochromatic beam of X-rays by Bragg reflection with an energy resolution better than 10 meV for the (hhh) planes (H>6) for diffraction near backscattering. The cross-sectional geometry produced by anisotropic etching high aspect ratio (height/width = 115) silicon grooves with CSOH was studied as a function of the solution concentration. At 50 weight percent (w/o) CSOH straight sidewalls are produced, but at 15 and 25 w/o re-entrant tapered profiles are produced. The etch rates are increased in the groove by 25--100% indicating diffusion effects. The etch rate of the surface was in agreement with previous studies of CSOH etching, but unable to predict the dimensional changes in the grooves.

  7. Module Configuration

    DOE Patents [OSTI]

    Oweis, Salah (Ellicott City, MD); D'Ussel, Louis (Bordeaux, FR); Chagnon, Guy (Cockeysville, MD); Zuhowski, Michael (Annapolis, MD); Sack, Tim (Cockeysville, MD); Laucournet, Gaullume (Paris, FR); Jackson, Edward J. (Taneytown, MD)

    2002-06-04

    A stand alone battery module including: (a) a mechanical configuration; (b) a thermal management configuration; (c) an electrical connection configuration; and (d) an electronics configuration. Such a module is fully interchangeable in a battery pack assembly, mechanically, from the thermal management point of view, and electrically. With the same hardware, the module can accommodate different cell sizes and, therefore, can easily have different capacities. The module structure is designed to accommodate the electronics monitoring, protection, and printed wiring assembly boards (PWAs), as well as to allow airflow through the module. A plurality of modules may easily be connected together to form a battery pack. The parts of the module are designed to facilitate their manufacture and assembly.

  8. Experimental verification of electro-refractive phase modulation in graphene

    E-Print Network [OSTI]

    Mohsin, Muhammad; Schall, Daniel; Otto, Martin; Matheisen, Christopher; Giesecke, Anna Lena; Sagade, Abhay A; Kurz, Heinrich

    2015-01-01

    Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating a gated graphene layer in a silicon-waveguide based Mach-Zehnder interferometer, the key parameters of a phase modulator like change in effective refractive index, insertion loss and absorption change are extracted. These experimentally obtained values are well reproduced by simulations and design guidelines are provided to make graphene devices competitive to contemporary silicon based phase modulators for on-chip applications.

  9. Measuring Speedy Electrons in Silicon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser, Supercomputer Measure Speedy Electrons in Silicon Laser, Supercomputer Measure Speedy Electrons in Silicon Simulations at NERSC Help Illuminate Attosecond Laser Experiment...

  10. Electric field geometries dominate quantum transport coupling in silicon nanoring

    SciTech Connect (OSTI)

    Lee, Tsung-Han, E-mail: askaleeg@gmail.com, E-mail: sfhu.hu@gmail.com; Hu, Shu-Fen, E-mail: askaleeg@gmail.com, E-mail: sfhu.hu@gmail.com [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China)

    2014-03-28

    Investigations on the relation between the geometries of silicon nanodevices and the quantum phenomenon they exhibit, such as the Aharonov–Bohm (AB) effect and the Coulomb blockade, were conducted. An arsenic doped silicon nanoring coupled with a nanowire by electron beam lithography was fabricated. At 1.47?K, Coulomb blockade oscillations were observed under modulation from the top gate voltage, and a periodic AB oscillation of ?B?=?0.178?T was estimated for a ring radius of 86?nm under a high sweeping magnetic field. Modulating the flat top gate and the pointed side gate was performed to cluster and separate the many electron quantum dots, which demonstrated that quantum confinement and interference effects coexisted in the doped silicon nanoring.

  11. Radiation Emission by Electrons Channeling in Bent Silicon Crystals

    E-Print Network [OSTI]

    Polozkov, R G; Sushko, G B; Korol, Andrey V; Solov'yov, Andrey V

    2014-01-01

    Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron channeling along Si(110) crystallographic planes is studied for the projectile energy 855 MeV.

  12. Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,

    E-Print Network [OSTI]

    Fan, Shanhui

    ABSTRACT: Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices solar cell. Additionally, about 26% of the module cost comes from the fabrication processes of a SiHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

  13. Silicone-containing composition

    DOE Patents [OSTI]

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  14. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  15. Performance Testing using Silicon Devices - Analysis of Accuracy: Preprint

    SciTech Connect (OSTI)

    Sengupta, M.; Gotseff, P.; Myers, D.; Stoffel, T.

    2012-06-01

    Accurately determining PV module performance in the field requires accurate measurements of solar irradiance reaching the PV panel (i.e., Plane-of-Array - POA Irradiance) with known measurement uncertainty. Pyranometers are commonly based on thermopile or silicon photodiode detectors. Silicon detectors, including PV reference cells, are an attractive choice for reasons that include faster time response (10 us) than thermopile detectors (1 s to 5 s), lower cost and maintenance. The main drawback of silicon detectors is their limited spectral response. Therefore, to determine broadband POA solar irradiance, a pyranometer calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under clear-sky conditions with respect to a broadband reference radiometer. The pyranometer is then used for various scenarios including varying airmass, panel orientation and atmospheric conditions. This would not be an issue if all irradiance wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately, the scattering and absorption signature varies widely with wavelength and the calibration factor for the silicon photodiode pyranometer is not appropriate for other conditions. This paper reviews the issues that will arise from the use of silicon detectors for PV performance measurement in the field based on measurements from a group of pyranometers mounted on a 1-axis solar tracker. Also we will present a comparison of simultaneous spectral and broadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.

  16. A complete set of material properties of single domain 0.26Pb,,In1/2Nb1/2...O30.46Pb,,Mg1/3Nb2/3...O30.28PbTiO3 single crystals

    E-Print Network [OSTI]

    Cao, Wenwu

    to two reasons: first, for prac- tical applications, ultrahigh piezoelectric behavior only oc- curs that the physical origin of the ultrahigh piezoelectric properties mainly come from orientation effect. © 2010 PMN-PT single crystals has triggered revolution- ary changes in piezoelectric devices, particularly

  17. Complete matrix properties of [001]c and [011]c poled 0.33Pb(In1/2Nb1/2)O30.38Pb(Mg1/3Nb2/3)O30.29PbTiO3 single crystals

    E-Print Network [OSTI]

    Cao, Wenwu

    ­0.29PbTiO3 single crystals Enwei Sun a , Rui Zhang a , Fengmin Wu a , Wenwu Cao a,b, a Condensed Matter-grown crystal was oriented by the Laue machine with an accuracy of ±0.5°. Each sample was cut and polished

  18. Characterizing the effects of free carriers in fully-etched, dielectric-clad silicon waveguides

    E-Print Network [OSTI]

    Sharma, Rajat; Lin, Hung-Hsi; Vallini, Felipe; Fainman, Yeshaiahu

    2015-01-01

    We theoretically characterize the free-carrier plasma dispersion effect in fully-etched silicon waveguides, with various dielectric material claddings, due to fixed and interface charges at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage (C-V) characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain (FDTD) method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively-driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

  19. Hybrid silicon evanescent approach to optical interconnects

    E-Print Network [OSTI]

    2009-01-01

    Big Island, HI, USA, 2006 Hybrid silicon evanescent approach10.1007/s00339-009-5118-1 Hybrid silicon evanescent approachthe recently developed hybrid silicon evanescent platform (

  20. Crystalline Silicon Photovoltaics Research

    Broader source: Energy.gov [DOE]

    DOE supports crystalline silicon photovoltaic (PV) research and development efforts that lead to market-ready technologies. Below are a list of the projects, summary of the benefits, and discussion...

  1. Investigation into the evolution of the structure of K{sub 1-x}Li{sub x}Ta{sub 1-y}Nb{sub y}O{sub 3} single crystals under variations in temperature

    SciTech Connect (OSTI)

    Borisov, S. A.; Vakhrushev, S. B.; Koroleva, E. Yu.; Naberezhnov, A. A. Syrnikov, P. P.; Simkin, V. G.; Kutnjak, Z.; Egami, T.; Dmowski, W.; Piekarz, P.

    2007-05-15

    The evolution of the structure of K{sub 1-x}Li{sub x}Ta{sub 1-y}Nb{sub y}O{sub 3} single crystals with x = 0.001, y = 0.026, and 1900 ppm Cu (KLTN277) and with x = 0.0014 and y = 0.024 (KLTN123), which exhibit an extremely high permittivity (up to 4 x 10{sup 5} in the quasi-static regime for the KLTN277 crystal), is investigated in the range from room temperature to 20 K. It is demonstrated that, upon cooling to the lowest temperatures, both crystals retain their cubic structure, but the lattice parameters pass through a minimum at the temperature of the observed anomalies of the dielectric response ({approx}50 K). In the neutron diffraction pattern of the KLTN123 sample, satellites appear in the vicinity of the (hhh) reflections at temperatures below {approx}50 K. These satellites can be associated with the nucleation of the rhombohedral phase.

  2. Temperature dependence of structural parameters in oxide-ion-conducting Nd{sub 9.33}(SiO{sub 4}){sub 6}O{sub 2}: single crystal X-ray studies from 295 to 900K

    SciTech Connect (OSTI)

    Okudera, Hiroki [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, DE-70569 Stuttgart (Germany)]. E-mail: h.okudera@fkf.mpg.de; Yoshiasa, Akira [Department of Earth and Space Science, Graduate School of Science, Osaka University, 1-1 Machikaneyama-cho, Toyonaka, Osaka 560-0043 (Japan); Masubuchi, Yuuji [Material Science and Engineering, Graduate School of Engineering, Hokkaido University, N13, W8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan); Higuchi, Mikio [Material Science and Engineering, Graduate School of Engineering, Hokkaido University, N13, W8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan); Kikkawa, Shinichi [Material Science and Engineering, Graduate School of Engineering, Hokkaido University, N13, W8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan)

    2004-12-01

    Crystallographic space group, structural parameters and their thermal changes in oxide-ion-conducting Nd{sub 9.33}(SiO{sub 4}){sub 6}O{sub 2} were investigated using high-temperature single-crystal X-ray diffraction experiments in the temperature range of 295=

  3. Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal

    SciTech Connect (OSTI)

    Shen, Xuan; Yamada, Tomoaki; Lin, Ruoqian; Kamo, Takafumi; Funakubo, Hiroshi; Wu, Di; Xin, Huolin L.; Su, Dong

    2015-10-08

    In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO3 films grown on (111)-oriented SrTiO3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a<110> comprised of a misfit dislocation along <112>, and threading dislocations along <110> or <100>. The misfit dislocation with Burgers vector of a <110> can dissociate into two ½ a <110> partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba0.7Sr0.3)TiO3 films.

  4. Hydrogen in polar intermetallics: Syntheses and structures of the ternary Ca5Bi3D0.93, Yb5Bi3Hx, and Sm5Bi3H~1 by powder neutron or single crystal X-ray diffraction

    SciTech Connect (OSTI)

    Leon-Escamilla, E. Alejandro; Dervenagas, Panagiotis; Stasis, Constantine; Corbett, John D.

    2010-01-01

    The syntheses of the title compounds are described in detail. Structural characterizations from refinements of single crystal X-ray diffraction data for Yb{sub 5}Bi{sub 3}H{sub x} and Sm{sub 5}Bi{sub 3}H{sub 1} and of powder neutron diffraction data for Ca{sub 5}Bi{sub 3}D{sub 0.93(3)} are reported. These confirm that all three crystallize with the heavy atom structure type of {beta}-Yb{sub 5}Sb{sub 3}, and the third gives the first proof that the deuterium lies in the center of nominal calcium tetrahedra, isostructural with the Ca{sub 5}Sb{sub 3}F-type structure. These Ca and Yb phases are particularly stable with respect to dissociation to Mn{sub 5}Si{sub 3}-type product plus H{sub 2}. Some contradictions in the literature regarding Yb{sub 5}Sb{sub 3} and Yb{sub 5}Sb{sub 3}H{sub x} phases are considered in terms of adventitious hydrogen impurities that are generated during reactions in fused silica containers at elevated temperatures.

  5. Fabrication and properties of microporous silicon 

    E-Print Network [OSTI]

    Shao, Jianzhong

    1994-01-01

    structure as the wafer from which it was fabricated. Oxidization at 800'C converts the porous silicon totally to amorphous silicon dioxide. Oxidation at 600'C produces a mixture of crystalline silicon and amorphous silicon dioxide. The pore structure...

  6. Laminated photovoltaic modules using back-contact solar cells

    DOE Patents [OSTI]

    Gee, James M. (Albuquerque, NM); Garrett, Stephen E. (Albuquerque, NM); Morgan, William P. (Albuquerque, NM); Worobey, Walter (Albuquerque, NM)

    1999-09-14

    Photovoltaic modules which comprise back-contact solar cells, such as back-contact crystalline silicon solar cells, positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The module designs allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  7. Results of I-V Curves and Visual Inspection of PV Modules Deployed at TEP Solar Test Yard (Poster)

    SciTech Connect (OSTI)

    McNutt, P.; Wohlgemuth, J.; Miller, D.; Stoltenberg, B.

    2014-02-01

    The purpose of the PV Service Life Prediction project is to examine and report on how solar modules are holding up after being in the field for 5 or more years. This poster presents the common problems crystalline-silicon and thin-film modules exhibit, including details of modules from three manufactures that were tested January 13-16, 2014.

  8. Thermionic modules

    DOE Patents [OSTI]

    King, Donald B. (Albuquerque, NM); Sadwick, Laurence P. (Salt Lake City, UT); Wernsman, Bernard R. (Clairton, PA)

    2002-06-18

    Modules of assembled microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures manufactured using MEMS manufacturing techniques including chemical vapor deposition. The MTCs incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices and modules can be fabricated at modest costs.

  9. Enhanced ferroelectric properties and thermal stability of nonstoichiometric 0.92(Na{sub 0.5}Bi{sub 0.5})TiO{sub 3}-0.08(K{sub 0.5}Bi{sub 0.5})TiO{sub 3} single crystals

    SciTech Connect (OSTI)

    Zhang, Haiwu E-mail: hsluo@mail.sic.ac.cn; Chen, Chao; Deng, Hao; Li, Long; Graduate University of Chinese Academy of Sciences, Beijing 100049 ; Zhao, Xiangyong; Lin, Di; Li, Xiaobing; Ren, Bo; Luo, Haosu E-mail: hsluo@mail.sic.ac.cn; Yan, Jun

    2013-11-18

    Bi deficient, Mn doped 0.92(Na{sub 0.5}Bi{sub 0.5})TiO{sub 3}-0.08(K{sub 0.5}Bi{sub 0.5})TiO{sub 3} single crystals were grown by carefully controlled top-seeded solution growth method. Local structures were investigated by transmission electron microscopy. The site occupation and valence state of manganese were characterized by electron paramagnetic resonance spectrum. The leakage current density in the as-grown single crystals is effectively depressed. The introduced defect complexes suppress the temperature induced phase transformation, increasing the depolarization temperature (165?°C) and thermal stability of ferroelectric properties.

  10. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    SciTech Connect (OSTI)

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  11. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, John W. (Albuquerque, NM)

    1994-01-01

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  12. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, J.W.

    1994-01-11

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  13. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to...

  14. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in platinum. Exploring metals that catalyze other important reactions-such as palladium, silver, copper, rhodium, iron, and cobalt-might also help researchers determine...

  15. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in detail because reaction conditions in the lab-near-vacuum pressures and near-freezing temperatures to achieve high coverage of adsorbates-do not produce results that...

  16. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Improving Industrial Catalysts Catalysts-substances that speed up the rates of chemical reactions without themselves being chemically changed-are used to initiate...

  17. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    automobile catalytic converters, and the degradation of platinum electrodes in hydrogen fuel cells. As the carbon monoxide coverage of the platinum surfaces increased, the...

  18. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The next steps will be to determine whether other adsorbed reactants, such as oxygen or hydrogen, also result in the creation of nanoclusters in platinum. Exploring metals that...

  19. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| DepartmentPeerFederal FleetUpSmallHydrocarbonPlasticsPlatinum

  20. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| DepartmentPeerFederal

  1. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| DepartmentPeerFederalPlatinum Nanoclusters Out-Perform Single

  2. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| DepartmentPeerFederalPlatinum Nanoclusters Out-Perform

  3. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| DepartmentPeerFederalPlatinum Nanoclusters Out-PerformPlatinum

  4. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| DepartmentPeerFederalPlatinum Nanoclusters

  5. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| DepartmentPeerFederalPlatinum NanoclustersPlatinum Nanoclusters

  6. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| DepartmentPeerFederalPlatinum NanoclustersPlatinum

  7. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesseworkSURVEYI/OPerformancePi Day Pi Day Pi DayPlasma technology forPlatinum

  8. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesseworkSURVEYI/OPerformancePi Day Pi Day Pi DayPlasma technology

  9. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesseworkSURVEYI/OPerformancePi Day Pi Day Pi DayPlasma technologyPlatinum

  10. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesseworkSURVEYI/OPerformancePi Day Pi Day Pi DayPlasma

  11. Module No: 420244International Humanitarian Module Title

    E-Print Network [OSTI]

    Module No: 420244International Humanitarian law Module Title: Co-requisite:public international law 1Pre-requisite: Module Type: specialization requirementModule level: Second year Evening Study-mailOffice Number Office Phone Academic rank Instructor Name E-mailOffice Number Office Phone Academic rank Module

  12. module.h

    E-Print Network [OSTI]

    /* OS-9 module header definitions */ /* Executable memory module */ typedef struct { unsigned m_sync, /* sync bytes ($87cd) */ m_size, /* module size ...

  13. Fabrication of porous silicon membranes 

    E-Print Network [OSTI]

    Yue, Wing Kong

    1988-01-01

    . Porous silicon layer is formed by the local dissolution which is initiated by the surface layer and is promoted by the hindrance layers composed of the silicic acid. Local etching or local dissolution is the cause of forming porous structure... of pores were 25 to 45 A with a mean value of 38 A. Microstructure of porous silicon studied by Besle et al. showed two distinct 17 patterns: the structure pattern of porous silicon film on heavily doped silicon and that on slightly doped silicon [26...

  14. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  15. Development of a Test System for the Quality Assurance of Silicon Microstrip Detectors for the Inner Tracking System of the CMS Experiment

    E-Print Network [OSTI]

    Axer, Markus

    2003-01-01

    The inner tracking system of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC) which is being built at the European Laboratory for Particle Physics CERN (Geneva, Switzerland) will be equipped with two different technologies of silicon detectors. While the innermost tracker will be composed of silicon pixel detectors, silicon microstrip detectors are envisaged for the outer tracker architecture. The silicon microstrip tracker will house about 15,000 single detector modules each composed of a set of silicon sensors, the readout electronics (front end hybrid), and a support frame. It will provide a total active area of 198 m2 and ten million analogue channels read out at the collider frequency of 40 MHz. This large number of modules to be produced and integrated into the tracking system is an unprecedented challenge involving industrial companies and various research institutes from many different countries. This thesis deals with the physics of silicon sensors and the preparation of ...

  16. Thermoelectric module

    DOE Patents [OSTI]

    Kortier, William E. (Columbus, OH); Mueller, John J. (Columbus, OH); Eggers, Philip E. (Columbus, OH)

    1980-07-08

    A thermoelectric module containing lead telluride as the thermoelectric mrial is encapsulated as tightly as possible in a stainless steel canister to provide minimum void volume in the canister. The lead telluride thermoelectric elements are pressure-contacted to a tungsten hot strap and metallurgically bonded at the cold junction to iron shoes with a barrier layer of tin telluride between the iron shoe and the p-type lead telluride element.

  17. A solar module fabrication process for HALE solar electric UAVs

    SciTech Connect (OSTI)

    Carey, P.G.; Aceves, R.C.; Colella, N.J.; Williams, K.A.; Sinton, R.A.; Glenn, G.S.

    1994-12-12

    We describe a fabrication process used to manufacture high power-to-weight-ratio flexible solar array modules for use on high-altitude-long-endurance (HALE) solar-electric unmanned air vehicles (UAVs). These modules have achieved power-to-weight ratios of 315 and 396 W/kg for 150{mu}m-thick monofacial and 110{mu}m-thick bifacial silicon solar cells, respectively. These calculations reflect average module efficiencies of 15.3% (150{mu}m) and 14.7% (110{mu}m) obtained from electrical tests performed by Spectrolab, Inc. under AMO global conditions at 25{degrees}C, and include weight contributions from all module components (solar cells, lamination material, bypass diodes, interconnect wires, and adhesive tape used to attach the modules to the wing). The fabrication, testing, and performance of 32 m{sup 2} of these modules will be described.

  18. In-situ Studies of the Reactions of Bifunctional and Heterocyclic Molecules over Noble Metal Single Crystal and Nanoparticle Catalysts Studied with Kinetics and Sum-Frequency Generation Vibrational Spectroscopy

    SciTech Connect (OSTI)

    Kliewer, Christopher J.

    2009-06-30

    Sum frequency generation surface vibrational spectroscopy (SFG-VS) in combination with gas chromatography (GC) was used in-situ to monitor surface bound reaction intermediates and reaction selectivities for the hydrogenation reactions of pyrrole, furan, pyridine, acrolein, crotonaldehyde, and prenal over Pt(111), Pt(100), Rh(111), and platinum nanoparticles under Torr reactant pressures and temperatures of 300K to 450K. The focus of this work is the correlation between the SFG-VS observed surface bound reaction intermediates and adsorption modes with the reaction selectivity, and how this is affected by catalyst structure and temperature. Pyrrole hydrogenation was investigated over Pt(111) and Rh(111) single crystals at Torr pressures. It was found that pyrrole adsorbs to Pt(111) perpendicularly by cleaving the N-H bond and binding through the nitrogen. However, over Rh(111) pyrrole adsorbs in a tilted geometry binding through the {pi}-aromatic orbitals. A surface-bound pyrroline reaction intermediate was detected over both surfaces with SFG-VS. It was found that the ring-cracking product butylamine is a reaction poison over both surfaces studied. Furan hydrogenation was studied over Pt(111), Pt(100), 10 nm cubic platinum nanoparticles and 1 nm platinum nanoparticles. The product distribution was observed to be highly structure sensitive and the acquired SFG-VS spectra reflected this sensitivity. Pt(100) exhibited more ring-cracking to form butanol than Pt(111), while the nanoparticles yielded higher selectivities for the partially saturated ring dihydrofuran. Pyridine hydrogenation was investigated over Pt(111) and Pt(100). The {alpha}-pyridyl surface adsorption mode was observed with SFG-VS over both surfaces. 1,4-dihydropyridine was seen as a surface intermediate over Pt(100) but not Pt(111). Upon heating the surfaces to 350K, the adsorbed pyridine changes to a flat-lying adsorption mode. No evidence was found for the pyridinium cation. The hydrogenation of the {alpha},{beta}-unsaturated aldehydes acrolein, crotonaldehyde, and prenal were investigated over Pt(111) and Pt(100). The selectivity for the hydrogenation of the C=C bond was found to depend on the number of methyl groups added to the bond. The adsorption modes of the three aldehydes were determined. The hydrogenation of crotonaldehyde was found to be nearly structure insensitive as the TOF and selectivity were very close to the same over Pt(111) and Pt(100). SFG-VS indicated identical surface intermediates over the two crystal faces during crotonaldehyde hydrogenation.

  19. Photovoltaic module and module arrays

    DOE Patents [OSTI]

    Botkin, Jonathan; Graves, Simon; Lenox, Carl J. S.; Culligan, Matthew; Danning, Matt

    2013-08-27

    A photovoltaic (PV) module including a PV device and a frame, The PV device has a PV laminate defining a perimeter and a major plane. The frame is assembled to and encases the laminate perimeter, and includes leading, trailing, and side frame members, and an arm that forms a support face opposite the laminate. The support face is adapted for placement against a horizontal installation surface, to support and orient the laminate in a non-parallel or tilted arrangement. Upon final assembly, the laminate and the frame combine to define a unitary structure. The frame can orient the laminate at an angle in the range of 3.degree.-7.degree. from horizontal, and can be entirely formed of a polymeric material. Optionally, the arm incorporates integral feature(s) that facilitate interconnection with corresponding features of a second, identically formed PV module.

  20. Photovoltaic module and module arrays

    DOE Patents [OSTI]

    Botkin, Jonathan (El Cerrito, CA); Graves, Simon (Berkeley, CA); Lenox, Carl J. S. (Oakland, CA); Culligan, Matthew (Berkeley, CA); Danning, Matt (Oakland, CA)

    2012-07-17

    A photovoltaic (PV) module including a PV device and a frame. The PV device has a PV laminate defining a perimeter and a major plane. The frame is assembled to and encases the laminate perimeter, and includes leading, trailing, and side frame members, and an arm that forms a support face opposite the laminate. The support face is adapted for placement against a horizontal installation surface, to support and orient the laminate in a non-parallel or tilted arrangement. Upon final assembly, the laminate and the frame combine to define a unitary structure. The frame can orient the laminate at an angle in the range of 3.degree.-7.degree. from horizontal, and can be entirely formed of a polymeric material. Optionally, the arm incorporates integral feature(s) that facilitate interconnection with corresponding features of a second, identically formed PV module.

  1. Multicolored Vertical Silicon Nanowires

    SciTech Connect (OSTI)

    Seo, Kwanyong; Wober, Munib; Steinvurzel, P.; Schonbrun, E.; Dan, Yaping; Ellenbogen, T.; Crozier, K. B.

    2011-04-13

    We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental data to the results of finite difference time domain simulations to elucidate the physical mechanisms behind the phenomena we observe. The nanowires are fabricated as arrays, but the vivid colors arise not from scattering or diffractive effects of the array, but from the guided mode properties of the individual nanowires. Each nanowire can thus define its own color, allowing for complex spatial patterning. We anticipate that the color filter effect we demonstrate could be employed in nanoscale image sensor devices.

  2. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  3. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  4. Making silicon stronger.

    SciTech Connect (OSTI)

    Boyce, Brad Lee

    2010-11-01

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

  5. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  6. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  7. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  8. Lightweight photovoltaic module development for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Nowlan, M.J.; Maglitta, J.C.; Lamp, T.R.

    1998-07-01

    Lightweight photovoltaic modules are being developed for powering high altitude unmanned aerial vehicles (UAVs). Terrestrial crystalline silicon solar cell and module technologies are being applied to minimize module cost, with modifications to improve module specific power (W/kg) and power density (W/m{sup 2}). New module processes are being developed for assembling standard thickness (320 mm) and thin (125 mm) solar cells, thin (50 to 100 mm) encapsulant films, and thin (25 mm) cover films. In comparison, typical terrestrial modules use 300 to 400 mm thick solar cells, 460 mm thick encapsulants, and 3.2 mm thick glass covers. The use of thin, lightweight materials allows the fabrication of modules with specific powers ranging from 120 to 200 W/kg, depending on cell thickness and efficiency, compared to 15 W/kg or less for conventional terrestrial modules. High efficiency designs based on ultra-thin (5 mm) GaAs cells have also been developed, with the potential for achieving substantially higher specific powers. Initial design, development, and module assembly work is completed. Prototype modules were fabricated in sizes up to 45 cm x 99 cm. Module materials and processes are being evaluated through accelerated environmental testing, including thermal cycling, humidity-freeze cycling, mechanical cycling, and exposure to UV and visible light.

  9. Vertical silicon nanowire arrays for gas sensing

    E-Print Network [OSTI]

    Zhao, Hangbo

    2014-01-01

    The goal of this research was to fabricate and characterize vertically aligned silicon nanowire gas sensors. Silicon nanowires are very attractive for gas sensing applications and vertically aligned silicon nanowires are ...

  10. AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION

    E-Print Network [OSTI]

    Deng, Xunming

    improved, which may make them suitable for encapsulating solar cells once again. We have recently of terrestrial solar cells. It is well known that EVA turns yellow upon extended exposure to ultraviolet light-based polymers (silicones) may not show this effect. Although silicones were used to encapsulate solar cells

  11. Adhesion Impact of Silicone Contamination during Encapsulation...

    Office of Scientific and Technical Information (OSTI)

    Adhesion Impact of Silicone Contamination during Encapsulation. Citation Details In-Document Search Title: Adhesion Impact of Silicone Contamination during Encapsulation. Abstract...

  12. Supported PV module assembly

    SciTech Connect (OSTI)

    Mascolo, Gianluigi; Taggart, David F.; Botkin, Jonathan D.; Edgett, Christopher S.

    2013-10-15

    A supported PV assembly may include a PV module comprising a PV panel and PV module supports including module supports having a support surface supporting the module, a module registration member engaging the PV module to properly position the PV module on the module support, and a mounting element. In some embodiments the PV module registration members engage only the external surfaces of the PV modules at the corners. In some embodiments the assembly includes a wind deflector with ballast secured to a least one of the PV module supports and the wind deflector. An array of the assemblies can be secured to one another at their corners to prevent horizontal separation of the adjacent corners while permitting the PV modules to flex relative to one another so to permit the array of PV modules to follow a contour of the support surface.

  13. Module Embedding Atanas Radenski

    E-Print Network [OSTI]

    Radenski, Atanas

    Module Embedding 1 Atanas Radenski Computer Science Department UNC-WSSU, P. O. Box 19479 Winston module embedding that enables the building of new modules from existing ones through inheritance for this mechanism. Module embedding is beneficial when modules and classes are used in combination and need

  14. Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide

    SciTech Connect (OSTI)

    Jiang, Weilin; Jung, Hee Joon; Kovarik, Libor; Wang, Zhaoying; Roosendaal, Timothy J.; Zhu, Zihua; Edwards, Danny J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2015-01-01

    As a candidate material for fusion reactor applications, silicon carbide (SiC) undergoes transmutation reactions under high-energy neutron irradiation with magnesium as the major metallic transmutant; the others include aluminum, beryllium and phosphorus in addition to helium and hydrogen gaseous species. The impact of these transmutants on SiC structural stability is currently unknown. This study uses ion implantation to introduce Mg into SiC. Multiaxial ion-channeling analysis of the as-produced damage state suggests that there are preferred Si <100> interstitial splits. The microstructure of the annealed sample was examined using high-resolution scanning transmission electron microscopy. The results show a high concentration of likely non-faulted tetrahedral voids and possible stacking fault tetrahedra near the damage peak. In addition to lattice distortion, dislocations and intrinsic and extrinsic stacking faults are also observed. Magnesium in 3C-SiC prefers to substitute for Si and it forms precipitates of cubic Mg2Si and tetragonal MgC2. The diffusion coefficient of Mg in 3C-SiC single crystal at 1573 K has been determined to be 3.8±0.4×10e-19 m2/sec.

  15. 17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating

    SciTech Connect (OSTI)

    Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

    2011-01-01

    In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon `black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in `black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

  16. Beam Test of a Large Area nonn Silicon Strip Detector with Fast Binary Readout Electronics

    E-Print Network [OSTI]

    Beam Test of a Large Area n­on­n Silicon Strip Detector with Fast Binary Readout Electronics Y test was carried out for the non­irradiated and the irradiated detector modules. Efficiency, noise occupancy and performance in the edge regions were analyzed using the beam test data. High efficiency

  17. Beam Test of a Large Area nonn Silicon Strip Detector with Fast Binary Readout Electronics

    E-Print Network [OSTI]

    Beam Test of a Large Area n­on­n Silicon Strip Detector with Fast Binary Readout Electronics Y modules was irradiated with protons to a fluence of 1.2 × 10 14 p/cm 2 . A beam test was carried out in the edge regions were analyzed using the beam test data. High efficiency both for the non

  18. Fundamentals of phase-only liquid crystal on silicon (LCOS) devices

    E-Print Network [OSTI]

    Zhang, Zichen; You, Zheng; Chu, Daping

    2014-10-24

    as possible to maximize the depth of phase modulation. In practice, a 26 surface pre-tilt is obtained by rubbing the polyimide alignment layer on both the glass cover and silicon backplane substrates in a nematic LCOS device.53 Moreover, no polarzation...

  19. Amorphous silicon research. Annual subcontract report, October 1, 1994--September 30, 1995

    SciTech Connect (OSTI)

    Arya, R.R.; Bennett, M.; Bradley, D.

    1996-02-01

    The major effort in this program is to develop cost-effective processes which satisfy efficiency, yield, and material usage criteria for mass production of amorphous silicon-based multijunction modules. New and improved processes were developed for the component cells and a more robust rear contact was developed for better long term stability.

  20. Working with Modules within Python

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using Modules within Python The EnvironmentModules python package gives access to the module system from within python. The EnvironmentModules python package has a single...

  1. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA)

    1980-01-01

    An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

  2. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  3. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Mendez, Victor P. (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  4. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  5. Cordierite silicon nitride filters

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B. ); Duiven, R.; Berger, M. ); Cleveland, J.; Ferri, J. )

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  6. Amorphous silicon/crystalline silicon heterojunctions: The future of high-efficiency silicon solar cells

    E-Print Network [OSTI]

    Firestone, Jeremy

    ;5 Record efficiencies #12;6 Diffused-junction solar cells Diffused-junction solar cell Chemical passivation to ~650 mV #12;7 Silicon heterojunction solar cells a-Si:H provides excellent passivation of c-Si surface Heterojunction solar cell Chemical passivation Chemical passivation #12;8 Voc and silicon heterojunction solar

  7. The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon

    E-Print Network [OSTI]

    The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon@ise.fhg.de Keywords: crystalline silicon, Czochralski, boron-oxygen defect, silicon interstitial Abstract. Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier

  8. Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using

    E-Print Network [OSTI]

    Tentzeris, Manos

    Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using grade silicon wafer (poxide layer have been developed using on a CMOS grade silicon substrate ( ~ 4 . 0 1Cl-cm) with an embedded thick silicon oxide layer using

  9. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01

    and Photovoltaic Performance . . . . . . . . . . . . . . .Amorphous Silicon as a Photovoltaic Material 2.1.2ii Photovoltaic Model . . . . . . . . . . .

  10. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

    1996-01-01

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  11. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  12. Investigations on optoelectronic transition mechanisms of silicon nanoporous pillar array by using surface photovoltage spectroscopy and photoluminescence spectroscopy

    SciTech Connect (OSTI)

    Hu, Zhen-Gang, E-mail: huzhengang@zzu.edu.cn; Tian, Yong-Tao; Li, Xin-Jian [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450001 (China)

    2014-03-28

    We report the electronic transition mechanisms for hydrothermally prepared silicon nanoporous pillar array (Si-NPA), investigated by surface photovoltage (SPV) spectroscopy and photoluminescence (PL) spectroscopy. By comparing the SPV spectra of single crystal silicon (sc-Si) with that of Si-NPA, the silicon nano-crystallites (nc-Si)/SiO{sub x} nanostructure in the Si-NPA could produce SPV in the wavelength range of 300–580?nm. And 580?nm (?2.14?eV) was considered as the absorption edge of the nc-Si/SiO{sub x} nanostructure. After the sample was annealed and oxidized in air at different temperatures, both the SPV in the wavelength range of 300–580?nm and the PL emission band around 690?nm from the nc-Si/SiO{sub x} nanostructure weakened and disappeared as the annealing temperature increased from 100 to 500?°C. But both the red-infrared PL band (>710?nm) and the violet-blue PL band were enhanced by increasing the annealing temperature. After 2 years of natural oxidation in air, the SPV features for sc-Si disappeared completely, and the SPV characteristics of the nc-Si/SiO{sub x} nanostructure could be clearly observed. After analysis, the Si–O structure related localized states at the nc-Si/SiO{sub x} interface dominated the electronic transitions during the red PL emission and the SPV for the nc-Si/SiO{sub x} nanostructure in Si-NPA, the red–infrared PL was due to the Si=O structure related electronic transitions, and the violet-blue PL emission could attribute to the oxygen-related defect related recombination of the photo induced carriers.

  13. Ballasted photovoltaic module and module arrays

    DOE Patents [OSTI]

    Botkin, Jonathan (El Cerrito, CA); Graves, Simon (Berkeley, CA); Danning, Matt (Oakland, CA)

    2011-11-29

    A photovoltaic (PV) module assembly including a PV module and a ballast tray. The PV module includes a PV device and a frame. A PV laminate is assembled to the frame, and the frame includes an arm. The ballast tray is adapted for containing ballast and is removably associated with the PV module in a ballasting state where the tray is vertically under the PV laminate and vertically over the arm to impede overt displacement of the PV module. The PV module assembly can be installed to a flat commercial rooftop, with the PV module and the ballast tray both resting upon the rooftop. In some embodiments, the ballasting state includes corresponding surfaces of the arm and the tray being spaced from one another under normal (low or no wind) conditions, such that the frame is not continuously subjected to a weight of the tray.

  14. Ultraviolet selective silicon photodiode 

    E-Print Network [OSTI]

    Chintapalli, Koteswara Rao

    1992-01-01

    (' silicon surfa&(& that n&ost of t h&) phologeneraied hole-el( & tron pairs are k&st by surface rccornbinai ion before being nolle&. trxl hy a pr). jun?i, ion. The major cause of surl'a&. e re?omhination is probably due Io lifetim(. shortening ol' Lhe...Luation degrades by &legr(es during (xposure Io high-cncrgy photo(&s such as in ultraviolet light. The second approa?h is a S&:hottky-b))rricr Iype. ol' photodiodc consisting of a iranspar()nt, thin metal film [I I]. ln I. his d(vi?e, ii, is dif%?ult to a...

  15. Shield Module Design Considerations

    E-Print Network [OSTI]

    McDonald, Kirk

    Shield Module Design Considerations Adam Carroll Van Graves July 3, 2014 #12;2 Managed by UT-Battelle for the U.S. Department of Energy Shield Module Design Considerations 3 July 2014 Overview · Capability to remotely remove and reinstall the shield modules is required · Shield module concept is He-cooled tungsten

  16. Polarization manipulation in silicon photonics

    E-Print Network [OSTI]

    Su, Zhan, S.M. Massachusetts Institute of Technology

    2013-01-01

    Silicon photonics is moving fast toward industrialization. It satisfies the increasing demand for higher speed, larger bandwidth communication. Thus it has a wide range of applications including high-performance computing, ...

  17. Direct Production of Silicones From Sand

    SciTech Connect (OSTI)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  18. Silicon-integrated thin-film structure for electro-optic applications

    DOE Patents [OSTI]

    McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

    2000-01-01

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  19. Silicon Tetrafluoride on Io

    E-Print Network [OSTI]

    Laura Schaefer; Bruce Fegley Jr

    2005-06-01

    Silicon tetrafluoride (SiF4) is observed in terrestrial volcanic gases and is predicted to be the major F - bearing species in low temperature volcanic gases on Io (Schaefer and Fegley, 2005b). SiF4 gas is also a potential indicator of silica-rich crust on Io. We used F/S ratios in terrestrial and extraterrestrial basalts, and gas/lava enrichment factors for F and S measured at terrestrial volcanoes to calculate equilibrium SiF4/SO2 ratios in volcanic gases on Io. We conclude that SiF4 can be produced at levels comparable to the observed NaCl/SO2 gas ratio. We also considered potential loss processes for SiF4 in volcanic plumes and in Io's atmosphere including ion-molecule reactions, electron chemistry, photochemistry, reactions with the major atmospheric constituents, and condensation. Photochemical destruction (tchem ~ 266 days) and/or condensation as Na2SiF6 (s) appear to be the major sinks for SiF4. We recommend searching for SiF4 with infrared spectroscopy using its 9.7 micron band as done on Earth.

  20. Module Handbook Specialisation Photovoltaics

    E-Print Network [OSTI]

    Habel, Annegret

    solar cell Real solar cells Silicon solar cells: crystalline, multicrystalline, amorphous Cells: CdTe and CIGS technologies. Organic solar cells. Part 2: Fabrication Methods Crystal defects Theory Fabrication methods Solar cell properties Cell research and pilot productions facilities

  1. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  2. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA)

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  3. Hybrid Silicon Photonic Integrated Circuit Technology

    E-Print Network [OSTI]

    2013-01-01

    and J. E. Bowers, “Hybrid silicon evanescent devices,”and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescentColdren, and J. E. Bowers, “Hybrid III/V sili- con photonic

  4. Hybrid Silicon Photonics for Optical Interconnects

    E-Print Network [OSTI]

    2011-01-01

    Promising Technology for the hybrid silicon laser in 2007.Electrically pumped hybrid AlGaInAs-silicon evanescentA. Yariv, “Electrically pumped hybrid evanescent Si/InGaAsP

  5. Design of a silicon waver breaker

    E-Print Network [OSTI]

    Mukaddam, Kabir James, 1983-

    2005-01-01

    Usually multiple MEMS or IC devices are fabricated on a single silicon wafer. Manually separating the components from each other involves scribing and fracturing the silicon. This thesis presents a design for a tool to aid ...

  6. Nucleation and solidification of silicon for photovoltaics

    E-Print Network [OSTI]

    Appapillai, Anjuli T. (Anjuli Tara)

    2010-01-01

    The majority of solar cells produced today are made with crystalline silicon wafers, which are typically manufactured by growing a large piece of silicon and then sawing it into ~200 pm wafers, a process which converts ...

  7. 17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating: Preprint

    SciTech Connect (OSTI)

    Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

    2011-07-01

    In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon 'black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in 'black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

  8. Optical properties of silicon carbide for astrophysical applications I. New laboratory infrared reflectance spectra and optical constants

    E-Print Network [OSTI]

    K. M. Pitman; A. M. Hofmeister; A. B. Corman; A. K. Speck

    2008-03-10

    Silicon Carbide (SiC) optical constants are fundamental inputs for radiative transfer models of astrophysical dust environments. However, previously published values contain errors and do not adequately represent the bulk physical properties of the cubic (beta) SiC polytype usually found around carbon stars. We provide new, uncompromised optical constants for beta- and alpha-SiC derived from single-crystal reflectance spectra and investigate quantitatively whether there is any difference between alpha- and beta-SiC that can be seen in infrared spectra and optical functions. Previous optical constants for SiC do not reflect the true bulk properties, and they are only valid for a narrow grain size range. The new optical constants presented here will allow narrow constraints to be placed on the grain size and shape distribution that dominate in astrophysical environments. In addition, our calculated absorption coefficients are much higher than laboratory measurements, which has an impact on the use of previous data to constrain abundances of these dust grains.

  9. Silicon crystal growing by oscillating crucible technique

    DOE Patents [OSTI]

    Schwuttke, G.H.; Kim, K.M.; Smetana, P.

    1983-08-03

    A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.

  10. Copper doped polycrystalline silicon solar cell

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

    1981-01-01

    Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

  11. Birefringence Measurements on Crystalline Silicon

    E-Print Network [OSTI]

    Krüger, Christoph; Khalaidovski, Alexander; Steinlechner, Jessica; Nawrodt, Ronny; Schnabel, Roman; Lück, Harald

    2015-01-01

    Crystalline silicon has been proposed as a new test mass material in third generation gravitational wave detectors such as the Einstein Telescope (ET). Birefringence can reduce the interferometric contrast and can produce dynamical disturbances in interferometers. In this work we use the method of polarisation-dependent resonance frequency analysis of Fabry-Perot-cavities containing silicon as a birefringent medium. Our measurements show a birefringence of silicon along the (111) axis of the order of $\\Delta\\, n \\approx 10^{-7}$ at a laser wavelength of 1550nm and room temperature. A model is presented that explains the results of different settings of our measurements as a superposition of elastic strains caused by external stresses in the sample and plastic strains possibly generated during the production process. An application of our theory on the proposed ET test mass geometry suggests no critical effect on birefringence due to elastic strains.

  12. Silicon Photonics: The Inside Story

    E-Print Network [OSTI]

    Jalali, Bahram

    2008-01-01

    The electronic chip industry embodies the height of technological sophistication and economics of scale. Fabricating inexpensive photonic components by leveraging this mighty manufacturing infrastructure has fueled intense interest in silicon photonics. If it can be done economically and in an energy efficient manner, empowering silicon with optical functionality will bring optical communications to the realm of computers where limitations of metallic interconnects are threatening the industry's future. The field is making stunning progress and stands to have a bright future, as long as the community recognizes the real challenges, and maintains an open mind with respect to its applications. This talk will review recent 'game changing' developments and discuss promising applications beyond data communication. It will conclude with recent observation of extreme-value statistical behavior in silicon photonics, a powerful example of how scientific discoveries can unexpectedly emerge in the course of technology d...

  13. Modulating lignin in plants

    DOE Patents [OSTI]

    Apuya, Nestor; Bobzin, Steven Craig; Okamuro, Jack; Zhang, Ke

    2013-01-29

    Materials and methods for modulating (e.g., increasing or decreasing) lignin content in plants are disclosed. For example, nucleic acids encoding lignin-modulating polypeptides are disclosed as well as methods for using such nucleic acids to generate transgenic plants having a modulated lignin content.

  14. Tandem junction amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  15. SILICON--1999 681 By Thomas S. Jones

    E-Print Network [OSTI]

    SILICON--1999 681 SILICON By Thomas S. Jones Domestic survey data and tables were prepared by Lisa in the foreign trade statistics. For 1999, an overall domestic silicon production of 423,000 metric tons (t led to ongoing legal actions. In the first part of 1999, of three domestic producers involved in civil

  16. Process of preparing tritiated porous silicon

    DOE Patents [OSTI]

    Tam, S.W.

    1997-02-18

    A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

  17. Progress towards CLEO III the silicon tracker and the LiF-TEA Ring Imaging Cherenkov Detector

    E-Print Network [OSTI]

    Artuso, M

    1998-01-01

    We describe the two major components of CLEO III: the Silicon Vertex Detector and the Ring Imaging Cherenkov Detector (RICH). The Silicon Vertex Detector is a four layer barrel-style device which spans the radial distance from 2.5 cm to 10.1 cm and covers 93% of the solid angle. It is being constructed using double-sided silicon sensors read out by front end electronics devices especially designed for this application. The RICH system consists of LiF radiators and multiwire proportional chambers containing a mixture of CH4 and TEA gases. The radiators are both flat and "sawtooth." Results from a test beam run of final CLEO III RICH modules will be presented, as well as test beam data on sensors to be employed in the Silicon Vertex Tracker.

  18. Progress towards CLEO III: the silicon tracker and the LiF-TEA Ring Imaging Cherenkov Detector

    E-Print Network [OSTI]

    Marina Artuso

    1998-11-18

    We describe the two major components of CLEO III: the Silicon Vertex Detector and the Ring Imaging Cherenkov Detector (RICH). The Silicon Vertex Detector is a four layer barrel-style device which spans the radial distance from 2.5 cm to 10.1 cm and covers 93% of the solid angle. It is being constructed using double-sided silicon sensors read out by front end electronics devices especially designed for this application. The RICH system consists of LiF radiators and multiwire proportional chambers containing a mixture of CH4 and TEA gases. The radiators are both flat and "sawtooth." Results from a test beam run of final CLEO III RICH modules will be presented, as well as test beam data on sensors to be employed in the Silicon Vertex Tracker.

  19. Segmented scintillation detectors with silicon photomultiplier readout for measuring antiproton annihilations

    SciTech Connect (OSTI)

    Sótér, A., E-mail: anna.soter@mpq.mpg.de [Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Strasse 1, D-85748 Garching (Germany); Todoroki, K.; Kobayashi, T. [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)] [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Barna, D. [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan) [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Wigner Research Center of Physics, H-1525 Budapest (Hungary); Horváth, D. [Wigner Research Center of Physics, H-1525 Budapest (Hungary)] [Wigner Research Center of Physics, H-1525 Budapest (Hungary); Hori, M. [Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Strasse 1, D-85748 Garching (Germany) [Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Strasse 1, D-85748 Garching (Germany); Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

    2014-02-15

    The Atomic Spectroscopy and Collisions Using Slow Antiprotons experiment at the Antiproton Decelerator (AD) facility of CERN constructed segmented scintillators to detect and track the charged pions which emerge from antiproton annihilations in a future superconducting radiofrequency Paul trap for antiprotons. A system of 541 cast and extruded scintillator bars were arranged in 11 detector modules which provided a spatial resolution of 17 mm. Green wavelength-shifting fibers were embedded in the scintillators, and read out by silicon photomultipliers which had a sensitive area of 1 × 1 mm{sup 2}. The photoelectron yields of various scintillator configurations were measured using a negative pion beam of momentum p ? 1 GeV/c. Various fibers and silicon photomultipliers, fiber end terminations, and couplings between the fibers and scintillators were compared. The detectors were also tested using the antiproton beam of the AD. Nonlinear effects due to the saturation of the silicon photomultiplier were seen at high annihilation rates of the antiprotons.

  20. SILANE SAFETY IN AMORPHOUS SILICON AND SILICON NITRIDE OPERATIONS

    E-Print Network [OSTI]

    industries in Europe, the United States, and Japan. As PV manufacturing is scaled-up to meet a growing demand) and amorphous silicon (a-Si). In this paper, we review established methods for using this gas safely; they include risk-prevention strategies, passive and active protection systems, outdoor storage, and adequate

  1. The ternary system cerium-palladium-silicon

    SciTech Connect (OSTI)

    Lipatov, Alexey [Institute of Physical Chemistry, University of Vienna, Waehringerstrasse 42, A-1090 Wien (Austria); Materials Science Department of the Moscow State University, Leninskie Gory, GSP-1, 119991 Moscow (Russian Federation); Gribanov, Alexander [Institute of Physical Chemistry, University of Vienna, Waehringerstrasse 42, A-1090 Wien (Austria); Chemistry Department of the Moscow State University, Leninskie Gory, GSP-1, 119991 Moscow (Russian Federation); Grytsiv, Andriy [Institute of Physical Chemistry, University of Vienna, Waehringerstrasse 42, A-1090 Wien (Austria); Rogl, Peter, E-mail: peter.franz.rogl@univie.ac.a [Institute of Physical Chemistry, University of Vienna, Waehringerstrasse 42, A-1090 Wien (Austria); Murashova, Elena; Seropegin, Yurii [Chemistry Department of the Moscow State University, Leninskie Gory, GSP-1, 119991 Moscow (Russian Federation); Giester, Gerald [Institute of Mineralogy and Crystallography, University of Vienna, Althanstrasse 14, A-1090 Wien (Austria); Kalmykov, Konstantin [Chemistry Department of the Moscow State University, Leninskie Gory, GSP-1, 119991 Moscow (Russian Federation)

    2009-09-15

    Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of tau{sub 8}-Ce{sub 3}Pd{sub 4}Si{sub 4} (U{sub 3}Ni{sub 4}Si{sub 4}-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), tau{sub 16}-Ce{sub 2}Pd{sub 14}Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for tau{sub 18}-CePd{sub 1-x}Si{sub x} (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of tau{sub 5}-Ce{sub 3}PdSi{sub 3} (Ba{sub 3}Al{sub 2}Ge{sub 2}-type, Immm; a=0.41207(1), b=0.43026(1), c=1.84069(4) nm) and tau{sub 13}-Ce{sub 3-x}Pd{sub 20+x}Si{sub 6} (0<=x<=1, Co{sub 20}Al{sub 3}B{sub 6}-type, Fm3-barm; a=1.21527(2) nm). The ternary compound Ce{sub 2}Pd{sub 3}Si{sub 3} (structure-type Ce{sub 2}Rh{sub 1.35}Ge{sub 4.65}, Pmmn; a=0.42040(1), b=0.42247(1), c=1.72444(3) nm) was detected as a high-temperature compound, however, does not participate in the equilibria at 800 deg. C. Phase equilibria in Ce-Pd-Si are characterized by the absence of cerium solubility in palladium silicides. Mutual solubility among cerium silicides and cerium-palladium compounds are significant whereby random substitution of the almost equally sized atom species palladium and silicon is reflected in extended homogeneous regions at constant Ce-content such as for tau{sub 2}-Ce(Pd{sub x}Si{sub 1-x}){sub 2} (AlB{sub 2}-derivative type), tau{sub 6}-Ce(Pd{sub x}Si{sub 1-x}){sub 2} (ThSi{sub 2}-type) and tau{sub 7}-CePd{sub 2-x}Si{sub 2+x}. The crystal structures of compounds tau{sub 4}-Ce{sub a}pprox{sub 8}Pd{sub a}pprox{sub 46}Si{sub a}pprox{sub 46}, tau{sub 12}-Ce{sub a}pprox{sub 29}Pd{sub a}pprox{sub 49}Si{sub a}pprox{sub 22}, tau{sub 15}-Ce{sub a}pprox{sub 22}Pd{sub a}pprox{sub 67}Si{sub a}pprox{sub 11}, tau{sub 17}-Ce{sub a}pprox{sub 5}Pd{sub a}pprox{sub 77}Si{sub a}pprox{sub 18} and tau{sub 18}-CePd{sub 1-x}Si{sub x} (xapprox0.1) are still unknown. - Abstract: Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction, metallography, SEM and EMPA techniques on about 130 alloys. 18 ternary compounds were observed. Display Omitted

  2. Alignment of the Pixel and SCT Modules for the 2004 ATLAS Combined Test Beam

    SciTech Connect (OSTI)

    ATLAS Collaboration; Ahmad, A.; Andreazza, A.; Atkinson, T.; Baines, J.; Barr, A.J.; Beccherle, R.; Bell, P.J.; Bernabeu, J.; Broklova, Z.; Bruckman de Renstrom, P.A.; Cauz, D.; Chevalier, L.; Chouridou, S.; Citterio, M.; Clark, A.; Cobal, M.; Cornelissen, T.; Correard, S.; Costa, M.J.; Costanzo, D.; Cuneo, S.; Dameri, M.; Darbo, G.; de Vivie, J.B.; Di Girolamo, B.; Dobos, D.; Drasal, Z.; Drohan, J.; Einsweiler, K.; Elsing, M.; Emelyanov, D.; Escobar, C.; Facius, K.; Ferrari, P.; Fergusson, D.; Ferrere, D.; Flick,, T.; Froidevaux, D.; Gagliardi, G.; Gallas, M.; Gallop, B.J.; Gan, K.K.; Garcia, C.; Gavrilenko, I.L.; Gemme, C.; Gerlach, P.; Golling, T.; Gonzalez-Sevilla, S.; Goodrick, M.J.; Gorfine, G.; Gottfert, T.; Grosse-Knetter, J.; Hansen, P.H.; Hara, K.; Hartel, R.; Harvey, A.; Hawkings, R.J.; Heinemann, F.E.W.; Henss, T.; Hill, J.C.; Huegging, F.; Jansen, E.; Joseph, J.; Unel, M. Karagoz; Kataoka, M.; Kersten, S.; Khomich, A.; Klingenberg, R.; Kodys, P.; Koffas, T.; Konstantinidis, N.; Kostyukhin, V.; Lacasta, C.; Lari, T.; Latorre, S.; Lester, C.G.; Liebig, W.; Lipniacka, A.; Lourerio, K.F.; Mangin-Brinet, M.; Marti i Garcia, S.; Mathes, M.; Meroni, C.; Mikulec, B.; Mindur, B.; Moed, S.; Moorhead, G.; Morettini, P.; Moyse, E.W.J.; Nakamura, K.; Nechaeva, P.; Nikolaev, K.; Parodi, F.; Parzhitskiy, S.; Pater, J.; Petti, R.; Phillips, P.W.; Pinto, B.; Poppleton, A.; Reeves, K.; Reisinger, I.; Reznicek, P.; Risso, P.; Robinson, D.; Roe, S.; Rozanov, A.; Salzburger, A.; Sandaker, H.; Santi, L.; Schiavi, C.; Schieck, J.; Schultes, J.; Sfyrla, A.; Shaw, C.; Tegenfeldt, F.; Timmermans, C.J.W.P.; Toczek, B.; Troncon, C.; Tyndel, M.; Vernocchi, F.; Virzi, J.; Anh, T. Vu; Warren, M.; Weber, J.; Weber, M.; Weidberg, A.R.; Weingarten, J.; Wellsf, P.S.; Zhelezkow, A.

    2008-06-02

    A small set of final prototypes of the ATLAS Inner Detector silicon tracking system(Pixel Detector and SemiConductor Tracker), were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated using the known momenta of the beam particles and were shown to yield consistent results among the different alignment approaches. From the residual distributions, it is concluded that the precision attained in the alignmentof the silicon modules is of the order of 5 mm in their most precise coordinate.

  3. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

    1997-01-01

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  4. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  5. Design, microstructure, and high-temperature behavior of silicon nitride sintered with rate-earth oxides

    SciTech Connect (OSTI)

    Ciniculk, M.K. (California Univ., Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering)

    1991-08-01

    The processing-microstructure-property relations of silicon nitride ceramics sintered with rare-earth oxide additives have been investigated with the aim of improving their high-temperature behavior. The additions of the oxides of Y, Sm, Gd, Dy, Er, or Yb were compositionally controlled to tailor the intergranular phase. The resulting microstructure consisted of {beta}-Si{sub 3}N{sub 4} grains and a crystalline secondary phase of RE{sub 2}Si{sub 2}O{sub 7}, with a thin residual amorphous phase present at grain boundaries. The lanthanide oxides were found to be as effective as Y{sub 2}O{sub 3} in densifying Si{sub 3}N{sub 4}, resulting in identical microstructures. The crystallization behavior of all six disilicates was similar, characterized by a limited nucleation and rapid growth mechanism resulting in large single crystals. Complete crystallization of the intergranular phase was obtained with the exception of a residual amorphous, observed at interfaces and believed to be rich in impurities, the cause of incomplete devitrification. The low resistance to oxidation of these materials was attributed to the minimization of amorphous phases via devitrification to disilicates, compatible with SiO{sub 2}, the oxidation product of Si{sub 3}N{sub 4}. The strength retention of these materials at 1300{degrees}C was found to be between 80% and 91% of room-temperature strength, due to crystallization of the secondary phase and a residual but refractory amorphous grain-boundary phase. The creep behavior was found to be strongly dependent on residual amorphous phase viscosity as well as on the oxidation behavior, as evidenced by the nonsteady-state creep rates of all materials. 122 refs., 51 figs., 12 tabs.

  6. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

    1998-08-11

    A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

  7. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, D.S.; Basore, P.A.; Schubert, W.K.

    1998-08-11

    A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

  8. Dispersion toughened silicon carbon ceramics

    DOE Patents [OSTI]

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  9. Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals

    E-Print Network [OSTI]

    Sushko, G B; Greiner, Walter; Solov'yov, A V

    2013-01-01

    Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195--855 MeV.

  10. Effects of neutron radiation on power silicon diodes at low temperatures 

    E-Print Network [OSTI]

    English, Kevin Joseph

    1991-01-01

    as opposed to lightly doped. Since the primary mechanism of conduction in the base region is injected carrier modulation, this last assumption should not cause a noticeable variation between these computations and the actual diodes. L/W 200 150 ----- I...EFFECIS OF NEUTRON RADIATION ON POWER SILICON DIODES AT LOW TEMPERATURES A Thesis by KEVIN JOSEPH ENGLISH Submitted to the Office of Graduate Studies Texas A&M University in partial fulfillment of the requirements for the degree of MASTER...

  11. Narrow band gap amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  12. Epitaxial growth of silicon for layer transfer

    DOE Patents [OSTI]

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  13. Bracket for photovoltaic modules

    DOE Patents [OSTI]

    Ciasulli, John; Jones, Jason

    2014-06-24

    Brackets for photovoltaic ("PV") modules are described. In one embodiment, a saddle bracket has a mounting surface to support one or more PV modules over a tube, a gusset coupled to the mounting surface, and a mounting feature coupled to the gusset to couple to the tube. The gusset can have a first leg and a second leg extending at an angle relative to the mounting surface. Saddle brackets can be coupled to a torque tube at predetermined locations. PV modules can be coupled to the saddle brackets. The mounting feature can be coupled to the first gusset and configured to stand the one or more PV modules off the tube.

  14. Module No: 410336Personal Statutes for Non-Module Title

    E-Print Network [OSTI]

    Module No: 410336Personal Statutes for Non- Muslims Module Title: Co-requisite:Introduction of Islamic Jurisprudence Pre-requisite: Module Type: specialization requirementModule level: Third Year Academic rank Module coordinator 307384Assistant Professor Dr. Fuad Sartawi ResearchTutorial Guidance

  15. Module No: 410319Copyrights and Neighboring Module Title

    E-Print Network [OSTI]

    Module No: 410319Copyrights and Neighboring Rights Module Title: Co-requisite:Effects of ObligationsPre-requisite: Module Type: specialization elective requirementModule level: Third Year Evening Academic rank Module coordinator e-bataineh@philadelphia.edu.joAssistant Professor Dr. Iyad Bataineh

  16. Amorphous silicon passivated contacts for diffused junction silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J. Yan, D.; Wan, Y.; Cuevas, A.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-04-28

    Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

  17. Approved Module Information for PD2003, 2014/5 Module Title/Name: Engineering Principles 2 Module Code: PD2003

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for PD2003, 2014/5 Module Title/Name: Engineering Principles 2 Module Code: PD2003 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module? No Module Dependancies Pre-requisites: Engineering Principles (PD1803). Co-requisites: None Specified Module

  18. Approved Module Information for BF2210, 2014/5 Module Title/Name: Making Managerial Decisions Module Code: BF2210

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for BF2210, 2014/5 Module Title/Name: Making Managerial Decisions Module Code: BF2210 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 20 Module Management Information Module Leader Name Florian Gebreiter Email Address gebreif1

  19. Approved Module Information for LPM040, 2014/5 Module Title/Name: Rethinking European Integration Module Code: LPM040

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LPM040, 2014/5 Module Title/Name: Rethinking European Integration Module Code: LPM040 School: Languages and Social Sciences Module Type: Standard Module New Module? Yes Module Credits: 20 Module Management Information Module Leader Name Nathaniel Copsey Email Address n

  20. Approved Module Information for LEM039, 2014/5 Module Title/Name: Grammar Module Code: LEM039

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LEM039, 2014/5 Module Title/Name: Grammar Module Code: LEM039 School: Languages and Social Sciences Module Type: Standard Module New Module? Not Specified Module Credits: 20 Module Management Information Module Leader Name Urszula Clark Email Address u

  1. Approved Module Information for LS3006, 2014/5 Module Title/Name: Hispanic Film Module Code: LS3006

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LS3006, 2014/5 Module Title/Name: Hispanic Film Module Code: LS3006 School: Languages and Social Sciences Module Type: Standard Module New Module? Not Specified Module Credits: 10 Module Management Information Module Leader Name Raquel Medina Email Address r

  2. Approved Module Information for LT2102, 2014/5 Module Title/Name: Inventory Control Module Code: LT2102

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LT2102, 2014/5 Module Title/Name: Inventory Control Module Code: LT2102 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name James Stone Email Address j

  3. Approved Module Information for PY2217, 2014/5 Module Title/Name: Personality Practical (JH) Module Code: PY2217

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for PY2217, 2014/5 Module Title/Name: Personality Practical (JH) Module Code: PY2217 School: Life and Health Sciences Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Ed Walford Email Address e

  4. Approved Module Information for BS3347, 2014/5 Module Title/Name: Economics of Entrepreneurship Module Code: BS3347

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for BS3347, 2014/5 Module Title/Name: Economics of Entrepreneurship Module Code: BS3347 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Anna Rebmann Email Address rebmanna

  5. Approved Module Information for PY3351, 2014/5 Module Title/Name: Child Development Module Code: PY3351

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for PY3351, 2014/5 Module Title/Name: Child Development Module Code: PY3351 School: Life and Health Sciences Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Claire Farrow Email Address farrowc

  6. Approved Module Information for CE2110, 2014/5 Module Title/Name: Process Laboratory Module Code: CE2110

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for CE2110, 2014/5 Module Title/Name: Process Laboratory Module Code: CE2110 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name John Brammer Email Address brammejg

  7. Approved Module Information for LK2004, 2014/5 Module Title/Name: Global Society Module Code: LK2004

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LK2004, 2014/5 Module Title/Name: Global Society Module Code: LK2004 School: Languages and Social Sciences Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Demelza Jones Email Address jonesd4@aston

  8. Approved Module Information for CH3117, 2014/5 Module Title/Name: Literature Research Project Module Code: CH3117

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for CH3117, 2014/5 Module Title/Name: Literature Research Project Module Code: CH3117 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Andrew James Sutherland Email Address

  9. Approved Module Information for LE1008, 2014/5 Module Title/Name: Grammar & Meaning Module Code: LE1008

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LE1008, 2014/5 Module Title/Name: Grammar & Meaning Module Code: LE1008 School: Languages and Social Sciences Module Type: Standard Module New Module? Not Specified Module Credits: 10 Module Management Information Module Leader Name Jack Grieve Email Address grievej1

  10. Approved Module Information for BN3385, 2014/5 Module Title/Name: Effective Project Delivery Module Code: BN3385

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for BN3385, 2014/5 Module Title/Name: Effective Project Delivery Module Code: BN3385 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 20 Module Management Information Module Leader Name Panagiotis Petridis Email Address petridip

  11. Approved Module Information for BS1163, 2014/5 Module Title/Name: Introduction to Microeconomics Module Code: BS1163

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for BS1163, 2014/5 Module Title/Name: Introduction to Microeconomics Module Code: BS1163 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name David Morris Email Address morrisd5@aston

  12. Approved Module Information for LEM016, 2014/5 Module Title/Name: Methodology Module Code: LEM016

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LEM016, 2014/5 Module Title/Name: Methodology Module Code: LEM016 School: Languages and Social Sciences Module Type: Standard Module New Module? No Module Credits: 20 Module Management Information Module Leader Name Muna Morris-Adams Email Address adamsmm

  13. Approved Module Information for BF2251, 2014/5 Module Title/Name: Financial Management Module Code: BF2251

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for BF2251, 2014/5 Module Title/Name: Financial Management Module Code: BF2251 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 20 Module Management Information Module Leader Name Colin Chapman Email Address chapmac1@aston

  14. Approved Module Information for LT2315, 2014/5 Module Title/Name: Rail Transport Module Code: LT2315

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LT2315, 2014/5 Module Title/Name: Rail Transport Module Code: LT2315 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name P Connor Email Address connorp

  15. Approved Module Information for ME2018, 2014/5 Module Title/Name: Quality Engineering Module Code: ME2018

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for ME2018, 2014/5 Module Title/Name: Quality Engineering Module Code: ME2018 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name David Upton Email Address uptondp

  16. Approved Module Information for LI2008, 2014/5 Module Title/Name: Communication across Cultures Module Code: LI2008

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LI2008, 2014/5 Module Title/Name: Communication across Cultures Module Code: LI2008 School: Languages and Social Sciences Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Olga Castro Email Address o

  17. Approved Module Information for CE4018, 2014/5 Module Title/Name: Advanced Particle Processing Module Code: CE4018

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for CE4018, 2014/5 Module Title/Name: Advanced Particle Processing Module Code: CE4018 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Mark Leaper Email Address m

  18. Approved Module Information for SE4031, 2014/5 Module Title/Name: Extended Integrative Option Module Code: SE4031

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for SE4031, 2014/5 Module Title/Name: Extended Integrative Option Module Code: SE4031 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 30 Module Management Information Module Leader Name Trevor Oliver Email Address t

  19. Approved Module Information for LT1312, 2014/5 Module Title/Name: Literature Review Project Module Code: LT1312

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LT1312, 2014/5 Module Title/Name: Literature Review Project Module Code: LT1312 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name David Carpenter Email Address d

  20. Approved Module Information for LS2017, 2014/5 Module Title/Name: Contemporary Latin America Module Code: LS2017

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LS2017, 2014/5 Module Title/Name: Contemporary Latin America Module Code: LS2017 School: Languages and Social Sciences Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Stephanie Panichelli-Batalla Email Address

  1. Approved Module Information for CE3013, 2014/5 Module Title/Name: Particle Processing Module Code: CE3013

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for CE3013, 2014/5 Module Title/Name: Particle Processing Module Code: CE3013 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Mark Leaper Email Address m

  2. Approved Module Information for LE2057, 2014/5 Module Title/Name: Computer Mediated Communication Module Code: LE2057

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LE2057, 2014/5 Module Title/Name: Computer Mediated Communication Module Code: LE2057 School: Languages and Social Sciences Module Type: Standard Module New Module? Not Specified Module Credits: 20 Module Management Information Module Leader Name Nur Hooton Email Address n

  3. Approved Module Information for BS3325, 2014/5 Module Title/Name: Competition Policy -Theory Module Code: BS3325

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for BS3325, 2014/5 Module Title/Name: Competition Policy - Theory Module Code: BS3325 School: Aston Business School Module Type: Standard Module New Module? Yes Module Credits: 10 Module Management Information Module Leader Name Matt Olczak Email Address olczakm

  4. Approved Module Information for BL1179, 2014/5 Module Title/Name: Accounting for Law Module Code: BL1179

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for BL1179, 2014/5 Module Title/Name: Accounting for Law Module Code: BL1179 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Angela Stanhope Email Address a

  5. Approved Module Information for BFM120, 2014/5 Module Title/Name: Investment Management Module Code: BFM120

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    Neirotti, Juan Pablo

    Approved Module Information for BFM120, 2014/5 Module Title/Name: Investment Management Module Code: BFM120 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 15 Module Management Information Module Leader Name Colin Chapman Email Address chapmac1@aston

  6. Approved Module Information for PY2216, 2014/5 Module Title/Name: Neuroscience Practicals Module Code: PY2216

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    Approved Module Information for PY2216, 2014/5 Module Title/Name: Neuroscience Practicals Module Code: PY2216 School: Life and Health Sciences Module Type: Standard Module New Module? Yes Module Credits: 10 Module Management Information Module Leader Name Ed Walford Email Address e

  7. Approved Module Information for BHM348, 2014/5 Module Title/Name: Employee Relations & Counselling Module Code: BHM348

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    Approved Module Information for BHM348, 2014/5 Module Title/Name: Employee Relations & Counselling Module Code: BHM348 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 15 Module Management Information Module Leader Name M Carter Email Address cartermr

  8. Approved Module Information for LT1307, 2014/5 Module Title/Name: Principles of Economics Module Code: LT1307

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    Approved Module Information for LT1307, 2014/5 Module Title/Name: Principles of Economics Module Code: LT1307 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name David Carpenter Email Address d

  9. Approved Module Information for ME2050, 2014/5 Module Title/Name: Dynamics and Control Module Code: ME2050

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    Approved Module Information for ME2050, 2014/5 Module Title/Name: Dynamics and Control Module Code: ME2050 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Xianghong Ma Email Address max

  10. Approved Module Information for BHM328, 2014/5 Module Title/Name: Strategic Business Sustainability Module Code: BHM328

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    Approved Module Information for BHM328, 2014/5 Module Title/Name: Strategic Business Sustainability Module Code: BHM328 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 15 Module Management Information Module Leader Name H Borland Email Address borlanhm

  11. Approved Module Information for BF2244, 2014/5 Module Title/Name: Strategic Finance Module Code: BF2244

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    Neirotti, Juan Pablo

    Approved Module Information for BF2244, 2014/5 Module Title/Name: Strategic Finance Module Code: BF2244 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Colin Chapman Email Address chapmac1@aston

  12. Approved Module Information for CE3102, 2014/5 Module Title/Name: Reaction Engineering Module Code: CE3102

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    Approved Module Information for CE3102, 2014/5 Module Title/Name: Reaction Engineering Module Code: CE3102 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Feroz Kabir Email Address kabirf

  13. Approved Module Information for LE2053, 2014/5 Module Title/Name: Variations of English Module Code: LE2053

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    Neirotti, Juan Pablo

    Approved Module Information for LE2053, 2014/5 Module Title/Name: Variations of English Module Code: LE2053 School: Languages and Social Sciences Module Type: Standard Module New Module? Not Specified Module Credits: 20 Module Management Information Module Leader Name Jack Grieve Email Address grievej1

  14. Approved Module Information for BF3314, 2014/5 Module Title/Name: Derivatives Module Code: BF3314

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    Approved Module Information for BF3314, 2014/5 Module Title/Name: Derivatives Module Code: BF3314 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Winifred Huang-Meier Email Address w

  15. Approved Module Information for PY3472, 2014/5 Module Title/Name: Autistic Spectrum Module Code: PY3472

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    Approved Module Information for PY3472, 2014/5 Module Title/Name: Autistic Spectrum Module Code: PY3472 School: Life and Health Sciences Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Gina Rippon Email Address rippong@aston.ac.uk Telephone

  16. Approved Module Information for CE3112, 2014/5 Module Title/Name: Nanomaterials Module Code: CE3112

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    Approved Module Information for CE3112, 2014/5 Module Title/Name: Nanomaterials Module Code: CE3112 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Qingchun Yuan Email Address q.yuan@aston.ac.uk Telephone

  17. Approved Module Information for CE1002, 2014/5 Module Title/Name: Design and Build Module Code: CE1002

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    Neirotti, Juan Pablo

    Approved Module Information for CE1002, 2014/5 Module Title/Name: Design and Build Module Code: CE1002 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Paul Andrew Tack Email Address tackpa

  18. Approved Module Information for LG2018, 2014/5 Module Title/Name: Metropolis Berlin Module Code: LG2018

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    Neirotti, Juan Pablo

    Approved Module Information for LG2018, 2014/5 Module Title/Name: Metropolis Berlin Module Code: LG2018 School: Languages and Social Sciences Module Type: Standard Module New Module? Not Specified Module Credits: 10 Module Management Information Module Leader Name Uwe Schütte Email Address u

  19. Approved Module Information for PD2002, 2014/5 Module Title/Name: Commercial Practice Module Code: PD2002

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    Neirotti, Juan Pablo

    Approved Module Information for PD2002, 2014/5 Module Title/Name: Commercial Practice Module Code: PD2002 School: Engineering and Applied Science Module Type: Standard Module New Module? No Module Credits: 20 Module Management Information Module Leader Name Jon Hewitt Email Address Not Specified

  20. Approved Module Information for BN2290, 2014/5 Module Title/Name: Operational Research Techniques Module Code: BN2290

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    Neirotti, Juan Pablo

    Approved Module Information for BN2290, 2014/5 Module Title/Name: Operational Research Techniques Module Code: BN2290 School: Aston Business School Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Ozren Despic Email Address o