National Library of Energy BETA

Sample records for modules single-crystal silicon

  1. Solar cell structure incorporating a novel single crystal silicon material

    DOE Patents [OSTI]

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  2. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    SciTech Connect (OSTI)

    Ravi, T. S.

    2013-05-01

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  3. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect (OSTI)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  4. Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

    SciTech Connect (OSTI)

    Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schrder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk; Lu, M.; Stein, A.; Ruggiero, C. A.; Salzman, J.; Kalish, R.

    2014-11-24

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q?=?2.51??10{sup 6}) photonic crystal cavities with low mode volume (V{sub m}?=?1.062??(?/n){sup 3}), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05?dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q?=?3??10{sup 3}.

  5. Precision control of thermal transport in cryogenic single-crystal silicon devices

    SciTech Connect (OSTI)

    Rostem, K.; Chuss, D. T.; Colazo, F. A.; Crowe, E. J.; Denis, K. L.; Lourie, N. P.; Moseley, S. H.; Stevenson, T. R.; Wollack, E. J.

    2014-03-28

    We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1?K. It is shown that the phonon mean-free-path ? is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than ?, even when the surface is fairly smooth, 510?nm rms, and the peak thermal wavelength is 0.6??m. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30?nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order ?, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of 8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

  6. Rear surface spallation on single-crystal silicon in nanosecond laser micromachining

    SciTech Connect (OSTI)

    Ren, Jun; Orlov, Sergei S.; Hesselink, Lambertus

    2005-05-15

    Rear surface spallation of single-crystal silicon under 5-ns laser pulse ablation at intensities of 0.6-60 GW/cm{sup 2} is studied through postablation examination of the ablated samples. The spallation threshold energy and the spallation depth's dependences on the energy and target thickness are measured. From the linear relation between the spallation threshold energy and the target thickness, an estimation of the material spall strength around 1.4 GPa is obtained, in reasonable agreement with the spall strength estimation of 0.8-1.2 GPa at a strain rate of 10{sup 7} s{sup -1} using Grady's model for brittle materials. The experiment reveals the internal fracturing process over an extended zone in silicon, which is controlled by the competition between the shock pressure load and the laser ablation rate. The qualities of the laser microstructuring and micromachining results are greatly improved by using an acoustic impedance matching approach.

  7. Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells

    SciTech Connect (OSTI)

    Kopach, V. R.; Kirichenko, M. V. Khrypunov, G. S.; Zaitsev, R. V.

    2010-06-15

    It is shown that an increase in the efficiency and manufacturability of single-junction single-crystal silicon photoelectric converters of solar energy requires the use of a back-surface reflector based on conductive transparent indium-tin oxide (ITO) 0.25-2 {mu}m thick. To increase the efficiency and reduce the sensitivity to the angle of light incidence on the photoreceiving surface of multijunction photoelectric converters with vertical diode cells based on single-crystal silicon, ITO/Al reflectors with an ITO layer >1 {mu}m thick along vertical boundaries of diode cells should be fabricated. The experimental study of multijunction photoelectric converters with ITO/Al reflectors at diode cell boundaries shows the necessity of modernizing the used technology of ITO layers to achieve their theoretically calculated thickness.

  8. Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent

    DOE Patents [OSTI]

    Lundberg, Lynn B.

    1982-01-01

    A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330.degree. C. to about 1500.degree. C.

  9. Phosphorus and aluminum gettering - investigation of synergistic effects in single-crystal and multicrystalline silicon

    SciTech Connect (OSTI)

    Schubert, W.K.; Gee, J.M.

    1996-06-01

    Synergistic effects from simultaneous phosphorus-diffusion/aluminium alloy gettering are investigated in three different crystalline- silicon substrates. The silicon materials, experimental design, characterization, and analysis are presented. Some evidence for synergism is observed in the finished cells on all three substrates types. These results are combined with complementary observations of the effects of oxidation on bulk properties of previously gettered substrates to suggest a high volume, low cost, process implementation which could give up to 9% relative increase in efficiency.

  10. Single crystal neutron diffraction study of lattice and magnetic structures of 5M modulated Ni2Mn1.14Ga0.86

    SciTech Connect (OSTI)

    Pramanick, Abhijit; Wang, Xiaoping; An, Ke; Stoica, Alexandru Dan; Hoffmann, Christina; Wang, Xun-Li

    2012-01-01

    A comprehensive description of the crystal and magnetic structures of Ni-Mn-Ga magnetic shape memory alloys is important to understand the physical origins of their magnetoelastic properties. These structural details for an off-stoichiometric Ni2Mn1.14Ga0.86 alloy have been obtained from refinement of high-resolution single crystal neutron diffraction data following a (3+1)-dimensional superspace formalism. In particular, the structure adopts a P2/m( 0 )00 (3+1)-D superspace symmetry with the following fundamental lattice parameters: a=4.255(4) , b=5.613(4) , c=4.216(3) , a commensurate periodicity of 5M and a modulation wave vector of . The magnetic moments are aligned along the b-axis. The modulations for atomic site displacements, site occupancies and magnetic moments are elucidated from a (3+1)-D refinement of the neutron diffraction data. In addition to atomic displacements corresponding to shear waves along <110>, distortions of Ni-centric tetrahedra are also evident. Physical interpretations for the different structural distortions and their relationship with magnetic properties are discussed.

  11. Silicon photonic heater-modulator

    DOE Patents [OSTI]

    Zortman, William A.; Trotter, Douglas Chandler; Watts, Michael R.

    2015-07-14

    Photonic modulators, methods of forming photonic modulators and methods of modulating an input optical signal are provided. A photonic modulator includes a disk resonator having a central axis extending along a thickness direction of the disk resonator. The disk resonator includes a modulator portion and a heater portion. The modulator portion extends in an arc around the central axis. A PN junction of the modulator portion is substantially normal to the central axis.

  12. Epitaxial Single Crystal Nanostructures for Batteries & PVs ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for Lithium Sulfur Batteries Better Ham & Cheese: Enhanced Anodes and Cathodes for Fuel Cells Epitaxial Single Crystal Nanostructures for Batteries & PVs High Performance ...

  13. Ames Lab 101: Single Crystal Growth

    ScienceCinema (OSTI)

    Schlagel, Deborah

    2014-06-04

    Ames Laboratory scientist Deborah Schlagel talks about the Lab's research in growing single crystals of various metals and alloys. The single crystal samples are vital to researchers' understanding of the characteristics of a materials and what gives these materials their particular properties.

  14. Ultratough single crystal boron-doped diamond

    DOE Patents [OSTI]

    Hemley, Russell J [Carnegie Inst. for Science, Washington, DC ; Mao, Ho-Kwang [Carnegie Inst. for Science, Washington, DC ; Yan, Chih-Shiue [Carnegie Inst. for Science, Washington, DC ; Liang, Qi [Carnegie Inst. for Science, Washington, DC

    2015-05-05

    The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

  15. The reliability and stability of multijunction amorphous silicon PV modules

    SciTech Connect (OSTI)

    Carlson, D.E.

    1995-11-01

    Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies are about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.

  16. Measurement of thermal conductivity in proton irradiated silicon (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Measurement of thermal conductivity in proton irradiated silicon Citation Details In-Document Search Title: Measurement of thermal conductivity in proton irradiated silicon We investigate the influence of proton irradiation on thermal conductivity in single crystal silicon. We apply laser based modulated thermoreflectance technique to extract the change in conductivity of the thin layer damaged by proton irradiation. Unlike time domain thermoreflectance techniques

  17. Test-to-Failure of Crystalline Silicon Modules: Preprint

    SciTech Connect (OSTI)

    Hacke, P.; Terwilliger, K.; Glick, S.; Trudell, D.; Bosco, N.; Johnston, S.; Kurtz, S. R.

    2010-10-01

    Accelerated lifetime testing of five crystalline silicon module designs was carried out according to the Terrestrial Photovoltaic Module Accelerated Test-to-Failure Protocol. This protocol compares the reliability of various module constructions on a quantitative basis. The modules under test are subdivided into three accelerated lifetime testing paths: 85..deg..C/85% relative humidity with system bias, thermal cycling between ?40..deg..C and 85..deg..C, and a path that alternates between damp heat and thermal cycling. The most severe stressor is damp heat with system bias applied to simulate the voltages that modules experience when connected in an array. Positive 600 V applied to the active layer with respect to the grounded module frame accelerates corrosion of the silver grid fingers and degrades the silicon nitride antireflective coating on the cells. Dark I-V curve fitting indicates increased series resistance and saturation current around the maximum power point; however, an improvement in junction recombination characteristics is obtained. Shunt paths and cell-metallization interface failures are seen developing in the silicon cells as determined by electroluminescence, thermal imaging, and I-V curves in the case of negative 600 V bias applied to the active layer. Ability to withstand electrolytic corrosion, moisture ingress, and ion drift under system voltage bias are differentiated.

  18. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Platinum Nanoclusters Out-Perform Single Crystals Print Wednesday, 27 October 2010 00:00 When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences

  19. World's largest single crystal of gold verified at Los Alamos

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    World's largest single crystal of gold verified at Los Alamos World's largest single crystal of gold verified at Los Alamos The SCD instrument is used to determine the periodic atomic arrangement or crystal structure of single crystals, both natural and synthetic. April 7, 2014 Neutron diffraction data collected on the single-crystal diffraction (SCD) instrument at the Lujan Center, from the Venezuelan gold sample, indicate that the sample is a single crystal. Neutron diffraction data collected

  20. Neutron detection with single crystal organic scintillators

    SciTech Connect (OSTI)

    Zaitseva, N; Newby, J; Hamel, S; Carman, L; Faust, M; Lordi, V; Cherepy, N; Stoeffl, W; Payne, S

    2009-07-15

    Detection of high-energy neutrons in the presence of gamma radiation background utilizes pulse-shape discrimination (PSD) phenomena in organics studied previously only with limited number of materials, mostly liquid scintillators and single crystal stilbene. The current paper presents the results obtained with broader varieties of luminescent organic single crystals. The studies involve experimental tools of crystal growth and material characterization in combination with the advanced computer modeling, with the final goal of better understanding the relevance between the nature of the organic materials and their PSD properties. Special consideration is given to the factors that may diminish or even completely obscure the PSD properties in scintillating crystals. Among such factors are molecular and crystallographic structures that determine exchange coupling and exciton mobility in organic materials and the impurity effect discussed on the examples of trans-stilbene, bibenzyl, 9,10-diphenylanthracene and diphenylacetylene.

  1. World's largest single crystal of gold verified at Los Alamos

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    World's largest single crystal of gold verified at Los Alamos World's largest single crystal of gold verified at Los Alamos The SCD instrument is used to determine the periodic...

  2. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect (OSTI)

    Ghosh, M.; DelCueto, J.: Kampas, F.; Xi, J. )

    1993-02-01

    This report describes results from the first phase of a three-phase contract for the development of stable, high-efficiency, same-band-gap, amorphous silicon (a-Si) multijunction photovoltaic (PV) modules. The program involved improving the properties of individual layers of semiconductor and non-semiconductor materials and small-area single-junction and multijunction devices, as well as the multijunction modules. The semiconductor materials research was performed on a-Si p, i, and n layers, and on microcrystalline silicon n layers. These were deposited using plasma-enhanced chemical vapor deposition. The non-semiconductor materials studied were tin oxide, for use as a transparent-conducting-oxide (TCO), and zinc oxide, for use as a back reflector and as a buffer layer between the TCO and the semiconductor layers. Tin oxide was deposited using atmospheric-pressure chemical vapor deposition. Zinc oxide was deposited using magnetron sputtering. The research indicated that the major challenge in the fabrication of a-Si multijunction PV modules is the contact between the two p-i-n cells. A structure that has low optical absorption but that also facilitates the recombination of electrons from the first p-i-n structure with holes from the second p-i-n structure is required. Non-semiconductor layers and a-Si semiconductor layers were tested without achieving the desired result.

  3. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  4. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  5. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  6. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  7. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  8. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  9. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  10. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  11. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  12. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  13. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Platinum Nanoclusters Out-Perform Single Crystals Print When it comes to metal catalysts, platinum is the standard. However, at about $2,000 an ounce, the high cost of the raw material presents major challenges for the future wide-scale use of platinum in fuel cells. Berkeley Lab research suggests that one possible way to meet these challenges is to think small. Researchers from Berkeley Lab's Materials Sciences Division have found that under high pressure-comparable to the pressures at which

  14. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect (OSTI)

    Guha, S. )

    1991-12-01

    This report describes research to improve the understanding of amorphous silicon alloys and other relevant non-semiconductor materials for use in high-efficiency, large-area multijunction modules. The research produced an average subcell initial efficiency of 8.8% over a 1-ft{sup 2} area using same-band-gap, dual-junction cells deposited over a ZnO/AlSi back reflector. An initial efficiency of 9.6% was achieved using a ZnO/Ag back reflector over smaller substrates. A sputtering machine will be built to deposit a ZnO/Ag back reflector over a 1-ft{sup 2} area so that a higher efficiency can also be obtained on larger substrates. Calculations have been performed to optimize the grid pattern, bus bars, and cell interconnects on modules. With our present state of technology, we expect a difference of about 6% between the aperture-area and active-area efficiencies of modules. Preliminary experiments show a difference of about 8%. We can now predict the performance of single-junction cells after long-term light exposure at 50{degree}C by exposing cells to short-term intense light at different temperatures. We find that single-junction cells deposited on a ZnO/Ag back reflector show the highest stabilized efficiency when the thickness of the intrinsic layers is about 2000 {angstrom}. 8 refs.

  15. Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity Single Cell Cavity This single cell cavity was made from a single crystal of niobium. Made in the same shape as the low-loss design proposed as an improvement to the baseline for the International Linear Collider (ILC), this cavity performs much better than the ILC design goal. Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity May 18, 2005 Jefferson Lab's Institute for Superconducting

  16. Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity Single Cell Cavity This single cell cavity was made from a single crystal of niobium. Made in the same shape as the low-loss design proposed as an improvement to the baseline for the International Linear Collider (ILC), this cavity performs much better than the ILC design goal. Jefferson Lab Builds First Single Crystal Single Cell Accelerating Cavity Jefferson Lab's Institute for Superconducting Radiofrequency Science

  17. Perpendicular Magnetism Unparalleled Find in Single Crystal | The Ames

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laboratory Perpendicular Magnetism Unparalleled Find in Single Crystal Two distinct types of magnetism aligned perpendicular in a single crystal have been detailed in new measurements on single-crystal and powered samples composed of barium, potassium, manganese, and arsenic. Antiferromagnetism occurs with a checkerboard-style patterning of the total atomic magnetic moments due to the spins of the localized electrons of the manganese atoms (known as 'local-moment magnetism'). Aligning

  18. Ultratough CVD single crystal diamond and three dimensional growth thereof

    DOE Patents [OSTI]

    Hemley, Russell J.; Mao, Ho-kwang; Yan, Chih-shiue

    2009-09-29

    The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

  19. Preparation and characterization of single crystal samples for...

    Office of Scientific and Technical Information (OSTI)

    However, experiments on single crystals can yield data on a range of orientation dependent properties such as thermal and electrical conductivity, magnetic susceptibility, ...

  20. World's largest single crystal of gold verified by Los Alamos...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Los Alamos verifies largest single gold crystal World's largest single crystal of gold verified by Los Alamos instruments Using Lujan Center's HIPPO instrument, researchers probed...

  1. Highly efficient terahertz wave modulators by photo-excitation of organics/silicon bilayers

    SciTech Connect (OSTI)

    Yoo, Hyung Keun; Kang, Chul; Hwang, In-Wook; Yoon, Youngwoon; Lee, Kiejin; Kee, Chul-Sik; Lee, Joong Wook

    2014-07-07

    Using hybrid bilayer systems comprising a molecular organic semiconductor and silicon, we achieve optically controllable active terahertz (THz) modulators that exhibit extremely high modulation efficiencies. A modulation efficiency of 98% is achieved from thermally annealed C{sub 60}/silicon bilayers, due to the rapid photo-induced electron transfer from the excited states of the silicon onto the C{sub 60} layer. Furthermore, we demonstrate the broadband modulation of THz waves. The cut-off condition of the system that is determined by the formation of efficient charge separation by the photo-excitation is highly variable, changing the system from insulating to metallic. The phenomenon enables an extremely high modulation bandwidth and rates of electromagnetic waves of interest. The realization of near-perfect modulation efficiency in THz frequencies opens up the possibilities of utilizing active modulators for THz spectroscopy and communications.

  2. Preparation and characterization of single crystal samples for

    Office of Scientific and Technical Information (OSTI)

    high-pressure experiments (Journal Article) | SciTech Connect Journal Article: Preparation and characterization of single crystal samples for high-pressure experiments Citation Details In-Document Search Title: Preparation and characterization of single crystal samples for high-pressure experiments To date, most research utilizing the diamond anvil cell (DAC) has been conducted with polycrystalline samples, thus the results are limited to addressing average bulk properties. However,

  3. Single crystal Processing and magnetic properties of gadolinium nickel

    SciTech Connect (OSTI)

    Shreve, Andrew John

    2012-11-02

    GdNi is a rare earth intermetallic material that exhibits very interesting magnetic properties. Spontaneous magnetostriction occurs in GdNi at T{sub C}, on the order of 8000ppm strain along the c-axis and only until very recently the mechanism causing this giant magnetostriction was not understood. In order to learn more about the electronic and magnetic structure of GdNi, single crystals are required for anisotropic magnetic property measurements. Single crystal processing is quite challenging for GdNi though since the rare-earth transition-metal composition yields a very reactive intermetallic compound. Many crystal growth methods are pursued in this study including crucible free methods, precipitation growths, and specially developed Bridgman crucibles. A plasma-sprayed Gd{sub 2}O{sub 3} W-backed Bridgman crucible was found to be the best means of GdNi single crystal processing. With a source of high-quality single crystals, many magnetization measurements were collected to reveal the magnetic structure of GdNi. Heat capacity and the magnetocaloric effect are also measured on a single crystal sample. The result is a thorough report on high quality single crystal processing and the magnetic properties of GdNi.

  4. Cast polycrystalline silicon photovoltaic cell and module manufacturing technology improvements. Annual subcontract report, 1 December 1993--30 November 1994

    SciTech Connect (OSTI)

    Wohlgemuth, J.

    1995-09-01

    This report describes work performed under a 3-y contract to advance Solarex`s cast polycrystalline silicon manufacturing technology, reduce module production cost, increase module performance, and expand Solarex`s commercial production capacities. Specific objectives are to reduce manufacturing cost for polycrstalline silicon PV modules to less than $1.20/W and to increase manufacturing capacity by a factor of 3. Solarex is working on casting, wire saws, cell process, module assembly, frameless module development, and automated cell handling.

  5. OPTIMIZATION OF THE PARAMETERS IN THE RHIC SINGLE CRYSTAL HEAVY ION COLLIMATION.

    SciTech Connect (OSTI)

    BIRYUKOV,V.M.; CHESNOKOV,Y.A.; KOTOV,V.I.; TRBOJEVIC,D.; STEVENS,A.

    1999-03-29

    In the framework of the project to design and test a collimation system prototype using bent channeling crystal for cleaning of the RHIC heavy ion beam halo, we have studied the optimal length and bending angle of a silicon (110) single crystal proposed to be a primary element situated upstream of the traditional heavy amorphous collimator. Besides the matters of the channeling and collimation efficiency, we also looked into the impact the crystal may have on the non-channeled particles that go on circulating in the ring, so as to reduce the momentum offset of the particles scattered of the crystal.

  6. Elasticity of single-crystal olivine at high pressures and temperature...

    Office of Scientific and Technical Information (OSTI)

    Elasticity of single-crystal olivine at high pressures and temperatures Citation Details In-Document Search Title: Elasticity of single-crystal olivine at high pressures and ...

  7. 14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Summary of Discussion Sessions

    SciTech Connect (OSTI)

    Sopori, B.; Tan, T.; Sinton, R.; Swanson, D.

    2004-10-01

    The 14th Workshop discussion sessions addressed funding needs for Si research and for R&D to enhance U.S. PV manufacturing. The wrap-up session specifically addressed topics for the new university silicon program. The theme of the workshop, Crystalline Silicon Solar Cells: Leapfrogging the Barriers, was selected to reflect the astounding progress in Si PV technology during last three decades, despite a host of barriers and bottlenecks. A combination of oral, poster, and discussion sessions addressed recent advances in crystal growth technology, new cell structures and doping methods, silicon feedstock issues, hydrogen passivation and fire through metallization, and module issues/reliability. The following oral/discussion sessions were conducted: (1) Technology Update; (2) Defects and Impurities in Si/Discussion; (3) Rump Session; (4) Module Issues and Reliability/Discussion; (5) Silicon Feedstock/Discussion; (6) Novel Doping, Cells, and Hetero-Structure Designs/Discussion; (7) Metallization/Silicon Nitride Processing/Discussion; (8) Hydrogen Passivation/Discussion; (9) Characterization/Discussion; and (10) Wrap-Up. This year's workshop lasted three and a half days and, for the first time, included a session on Si modules. A rump session was held on the evening of August 8, which addressed efficiency expectations and challenges of c Si solar cells/modules. Richard King of DOE and Daren Dance of Wright Williams& Kelly (formerly of Sematech) spoke at two of the luncheon sessions. Eleven students received Graduate Student Awards from funds contributed by the PV industry.

  8. Growing intermetallic single crystals using in situ decanting

    SciTech Connect (OSTI)

    Petrovic, Cedomir; Canfield, Paul; Mellen, Jonathan

    2012-05-16

    High temperature metallic solution growth is one of the most successful and versatile methods for single crystal growth, and is particularly suited for exploratory synthesis. The method commonly utilizes a centrifuge at room temperature and is very successful for the synthesis of single crystal phases that can be decanted from the liquid below the melting point of the silica ampoule. In this paper, we demonstrate the extension of this method that enables single crystal growth and flux decanting inside the furnace at temperatures above 1200C. This not only extends the number of available metallic solvents that can be used in exploratory crystal growth but also can be particularly well suited for crystals that have a rather narrow exposed solidification surface in the equilibrium alloy phase diagram.

  9. Fuel Performance Experiments on the Atomistic Level, Studying Fuel Through Engineered Single Crystal UO2

    SciTech Connect (OSTI)

    Burgett, Eric; Deo, Chaitanya; Phillpot, Simon

    2015-05-08

    Fuel Performance Experiments on the Atomistic Level, Studying Fuel Through Engineered Single Crystal UO2

  10. Method for harvesting rare earth barium copper oxide single crystals

    DOE Patents [OSTI]

    Todt, Volker R.; Sengupta, Suvankar; Shi, Donglu

    1996-01-01

    A method of preparing high temperature superconductor single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals of the high temperature superconductor, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals of the high temperature superconductor on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals melted, allowing the wicking away of the peritectic liquid.

  11. Method for harvesting single crystals from a peritectic melt

    DOE Patents [OSTI]

    Todt, V.R.; Sengupta, S.; Shi, D.

    1996-08-27

    A method of preparing single crystals is disclosed. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals unmelted, allowing the wicking away of the peritectic liquid. 2 figs.

  12. Method for harvesting single crystals from a peritectic melt

    DOE Patents [OSTI]

    Todt, Volker R.; Sengupta, Suvankar; Shi, Donglu

    1996-01-01

    A method of preparing single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals unmelted, allowing the wicking away of the peritectic liquid.

  13. Synthesis, spectral characterization, and single crystal structure studies

    Office of Scientific and Technical Information (OSTI)

    of (2-nitro-ethene-1,1-diyl)-bis-((4-isopropyl-benzyl)sulfane) (Journal Article) | SciTech Connect Synthesis, spectral characterization, and single crystal structure studies of (2-nitro-ethene-1,1-diyl)-bis-((4-isopropyl-benzyl)sulfane) Citation Details In-Document Search Title: Synthesis, spectral characterization, and single crystal structure studies of (2-nitro-ethene-1,1-diyl)-bis-((4-isopropyl-benzyl)sulfane) The title compound (2-nitro-ethene-1,1-diyl)-bis-(4-isopropylbenzyl)sulfane)

  14. Apparatus And Method For Producing Single Crystal Metallic Objects

    DOE Patents [OSTI]

    Huang, Shyh-Chin; Gigliotti, Jr., Michael Francis X.; Rutkowski, Stephen Francis; Petterson, Roger John; Svec, Paul Steven

    2006-03-14

    A mold is provided for enabling casting of single crystal metallic articles including a part-defining cavity, a sorter passage positioned vertically beneath and in fluid communication with the part-defining cavity, and a seed cavity positioned vertically beneath and in fluid communication with the sorter passage. The sorter passage includes a shape suitable for encouraging a single crystal structure in solidifying molten metal. Additionally, a portion of the mold between the sorter passage and the part-defining cavity includes a notch for facilitating breakage of a cast article proximate the notch during thermal stress build-up, so as to prevent mold breakage or the inclusion of part defects.

  15. SINGLE CRYSTAL NIOBIUM TUBES FOR PARTICLE COLLIDERS ACCELERATOR CAVITIES

    SciTech Connect (OSTI)

    MURPHY, JAMES E

    2013-02-28

    The objective of this research project is to produce single crystal niobium (Nb) tubes for use as particle accelerator cavities for the Fermi laboratorys International Linear Collider project. Single crystal Nb tubes may have superior performance compared to a polycrystalline tubes because the absence of grain boundaries may permit the use of higher accelerating voltages. In addition, Nb tubes that are subjected to the high temperature, high vacuum crystallization process are very pure and well annealed. Any impurity with a significantly higher vapor pressure than Nb should be decreased by the relatively long exposure at high temperature to the high vacuum environment. After application of the single crystal process, the surfaces of the Nb tubes are bright and shiny, and the tube resembles an electro polished Nb tube. For these reasons, there is interest in single crystal Nb tubes and in a process that will produce single crystal tubes. To convert a polycrystalline niobium tube into a single crystal, the tube is heated to within a few hundred ?C of the melting temperature of niobium, which is 2477 ?C. RF heating is used to rapidly heat the tube in a narrow zone and after reaching the operating temperature, the hot zone is slowly passed along the length of the tube. For crystallization tests with Nb tubes, the traverse rate was in the range of 1-10 cm per hour. All the crystallization tests in this study were performed in a water-cooled, stainless steel chamber under a vacuum of 5 x10-6 torr or better. In earliest tests of the single crystal growth process, the Nb tubes had an OD of 1.9 cm and a wall thickness of 0.15 mm. With these relatively small Nb tubes, the single crystal process was always successful in producing single crystal tubes. In these early tests, the operating temperature was normally maintained at 2200 ?C, and the traverse rate was 5 cm per hour. In the next test series, the Nb tube size was increased to 3.8 cm OD and the wall thickness was increased 0.18 mm and eventually to 0.21 mm. Again, with these larger tubes, single crystal tubes were usually produced by the crystallization process. The power supply was generally operated at full output during these tests, and the traverse rate was 5 cm per hour. In a few tests, the traverse rate was increased to 10 cm per hour, and at the faster traverse rate, single crystal growth was not achieved. In these tests with a faster traverse rate, it was thought that the tube was not heated to a high enough temperature to achieve single crystal growth. In the next series of tests, the tube OD was unchanged at 3.8 cm and the wall thickness was increased to 0.30 mm. The increased wall thickness made it difficult to reach an operating temperature above 2,000 ?C, and although the single crystal process caused a large increase in the crystal grains, no single crystal tubes were produced. It was assumed that the operating temperature in these tests was not high enough to achieve single crystal growth. In FY 2012, a larger power supply was purchased and installed. With the new power supply, temperatures above the melting point of Nb were easily obtained regardless of the tube thickness. A series of crystallization tests was initiated to determine if indeed the operating temperature of the previous tests was too low to achieve single crystal growth. For these tests, the Nb tube OD remained at 3.8 cm and the wall thickness was 0.30 mm. The first test had an operating temperature of 2,000 ?C. and the operating temperature was increased by 50 ?C increments for each successive test. The final test was very near the Nb melting temperature, and indeed, the Nb tube eventually melted in the center of the tube. These tests showed that higher temperatures did yield larger grain sizes if the traverse rate was held constant at 5 cm per hour, but no single crystal tubes were produced even at the highest operating temperature. In addition, slowing the traverse rate to as low as 1 cm per hour did not yield a single crystal tube regardless of operating temperature. At this time, it

  16. Nonequilibrium quasiparticle relaxation dynamics in single crystals of

    Office of Scientific and Technical Information (OSTI)

    hole- and electron-doped BaFe2As2 (Journal Article) | SciTech Connect Nonequilibrium quasiparticle relaxation dynamics in single crystals of hole- and electron-doped BaFe2As2 Citation Details In-Document Search Title: Nonequilibrium quasiparticle relaxation dynamics in single crystals of hole- and electron-doped BaFe2As2 Authors: Torchinsky, Darius H. ; McIver, James W. ; Hsieh, David ; Chen, G. F. ; Luo, J. L. ; Wang, N. L. ; Gedik, Nuh Publication Date: 2011-09-13 OSTI Identifier: 1100755

  17. Superconducting properties in single crystals of the topological nodal

    Office of Scientific and Technical Information (OSTI)

    semimetal PbTaSe 2 (Journal Article) | SciTech Connect Superconducting properties in single crystals of the topological nodal semimetal PbTaSe 2 Citation Details In-Document Search This content will become publicly available on February 21, 2017 Title: Superconducting properties in single crystals of the topological nodal semimetal PbTaSe 2 Authors: Zhang, Cheng-Long ; Yuan, Zhujun ; Bian, Guang ; Xu, Su-Yang ; Zhang, Xiao ; Hasan, M. Zahid ; Jia, Shuang Publication Date: 2016-02-22 OSTI

  18. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  19. Degradation Analysis of Weathered Crystalline-Silicon PV Modules: Preprint

    SciTech Connect (OSTI)

    Osterwald, C. R.; Anderberg, A.; Rummel, S.; Ottoson, L.

    2002-05-01

    We present an analysis of the results of a solar weathering program that found a linear relationship between maximum power degradation and the total UV exposure dose for four different types of commercial crystalline Si modules. The average degradation rate for the four modules types was 0.71% per year. The analysis showed that losses of short-circuit current were responsible for the maximum power degradation. Judging by the appearance of the undegraded control modules, it is very doubtful that the short-circuit current losses were caused by encapsulation browning or obscuration. When we compared the quantum efficiency of a single cell in a degraded module to one from an unexposed control module, it appears that most of the degradation has occurred in the 800 - 1100 nm wave-length region, and not the short wavelength region.

  20. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    SciTech Connect (OSTI)

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  1. Outdoor performance stability and controlled light-soak testing of amorphous silicon multijunction modules at NREL

    SciTech Connect (OSTI)

    Mrig, L.; Burdick, J.; Luft, W.; Kroposki, B.

    1995-10-01

    The National Renewable Energy Laboratory (NREL) has been testing amorphous silicon (a-Si) Photovoltaic (PV) modules for more than a decade. NREL has been conducting controlled light-soak testing of multifunction a-Si modules to characterize their performance for stability evaluation as well as to benchmark the technology status. Some of the test modules, after controlled light-soak testing, have been installed outdoors. The authors have observed that under outdoor exposure, the modules further degrade in performance, possibly due to lower outdoor temperatures and varying spectra. The paper presents data on the light-induced degradation for the third controlled light-soak test on multijunction a-Si modules as well as outdoor performance data on single and multijunction modules under prevailing conditions.

  2. Outdoor performance stability and controlled light-soak testing of amorphous silicon multijunction modules at NREL

    SciTech Connect (OSTI)

    Mrig, L.; Burdick, J.; Luft, W.; Kroposki, B.

    1994-12-31

    The National Renewable Energy Laboratory (NREL) has been testing amorphous silicon (a-Si) Photovoltaic (PV) modules for more than a decade. NREL has been conducting controlled light-soak testing of multijunction a-Si modules to characterize their performance for stability evaluation as well as to benchmark the technology status. Some of the test modules, after controlled light-soak testing, have been installed outdoors. The authors have observed that under outdoor exposure, the modules further degrade in performance, possibly due to lower outdoor temperatures and varying spectra. The paper presents data on the light-induced degradation for the third controlled light-soak test on multijunction a-Si modules as well as outdoor performance data on single- and multijunction modules under prevailing conditions.

  3. High efficiency multijunction amorphous silicon alloy-based solar cells and modules

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.; Banerjeee, A.; Glatfelter, T.; Hoffman, K.; Xu, X. )

    1994-06-30

    We have achieved initial efficiency of 11.4% as confirmed by National Renewable Energy Laboratory (NREL) on a multijunction amorphous silicon alloy photovoltaic module of one-square-foot-area. [bold This] [bold is] [bold the] [bold highest] [bold initial] [bold efficiency] [bold confirmed] [bold by] [bold NREL] [bold for] [bold any] [bold thin] [bold film] [bold photovoltaic] [bold module]. After light soaking for 1000 hours at 50 [degree]C under one-sun illumination, a module with initial efficiency of 11.1% shows a stabilized efficiency of 9.5%. Key factors that led to this high performance are discussed.

  4. Method for harvesting rare earth barium copper oxide single crystals

    DOE Patents [OSTI]

    Todt, V.R.; Sengupta, S.; Shi, D.

    1996-04-02

    A method of preparing high temperature superconductor single crystals is disclosed. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals of the high temperature superconductor, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals of the high temperature superconductor on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals melted, allowing the wicking away of the peritectic liquid. 2 figs.

  5. Single-Crystal Structure of a Covalent Organic Framework

    SciTech Connect (OSTI)

    Zhang, YB; Su, J; Furukawa, H; Yun, YF; Gandara, F; Duong, A; Zou, XD; Yaghi, OM

    2013-11-06

    The crystal structure of a new covalent organic framework, termed COF-320, is determined by single-crystal 3D electron diffraction using the rotation electron diffraction (RED) method for data collection. The COF crystals are prepared by an imine condensation of tetra-(4-anilyl)methane and 4,4'-biphenyldialdehyde in 1,4-dioxane at 120 degrees C to produce a highly porous 9-fold interwoven diamond net. COF-320 exhibits permanent porosity with a Langmuir surface area of 2400 m(2)/g and a methane total uptake of 15.0 wt % (176 cm(3)/cm(3)) at 25 degrees C and 80 bar. The successful determination of the structure of COF-320 directly from single-crystal samples is an important advance in the development of COF chemistry.

  6. Growth and characterization of lithium yttrium borate single crystals

    SciTech Connect (OSTI)

    Singh, A. K.; Singh, S. G.; Tyagi, M.; Desai, D. G.; Sen, Shashwati

    2014-04-24

    Single crystals of 0.1% Ce doped Li{sub 6}Y(BO{sub 3}){sub 3} have been grown using the Czochralski technique. The photoluminescence study of these crystals shows a broad emission at ? 420 nm corresponding to Ce{sub 3+} emission from 5d?4f energy levels. The decay profile of this emission shows a fast response of ? 28 ns which is highly desirable for detector applications.

  7. Experiences in Large Grain-Single Crystal Cavity Fabrication

    SciTech Connect (OSTI)

    Pekeler, Michael; Schwellenbach, Johannes; Tradt, Marco

    2007-08-09

    At ACCEL instruments several single cell and 9-cell cavities have been produced out of large grain niobium sheets from different suppliers. The fabrication experience and difference to the production out of fine grain niobium sheets will be described. In addition two cavities were produced using single crystal niobium sheets. The final cavities showed no grain boundaries at all in the cavity cell, even not in the electron beam welding seam.

  8. Single crystal plasticity by modeling dislocation density rate behavior

    SciTech Connect (OSTI)

    Hansen, Benjamin L; Bronkhorst, Curt; Beyerlein, Irene; Cerreta, E. K.; Dennis-Koller, Darcie

    2010-12-23

    The goal of this work is to formulate a constitutive model for the deformation of metals over a wide range of strain rates. Damage and failure of materials frequently occurs at a variety of deformation rates within the same sample. The present state of the art in single crystal constitutive models relies on thermally-activated models which are believed to become less reliable for problems exceeding strain rates of 10{sup 4} s{sup -1}. This talk presents work in which we extend the applicability of the single crystal model to the strain rate region where dislocation drag is believed to dominate. The elastic model includes effects from volumetric change and pressure sensitive moduli. The plastic model transitions from the low-rate thermally-activated regime to the high-rate drag dominated regime. The direct use of dislocation density as a state parameter gives a measurable physical mechanism to strain hardening. Dislocation densities are separated according to type and given a systematic set of interactions rates adaptable by type. The form of the constitutive model is motivated by previously published dislocation dynamics work which articulated important behaviors unique to high-rate response in fcc systems. The proposed material model incorporates thermal coupling. The hardening model tracks the varying dislocation population with respect to each slip plane and computes the slip resistance based on those values. Comparisons can be made between the responses of single crystals and polycrystals at a variety of strain rates. The material model is fit to copper.

  9. Interfacial dislocation motion and interactions in single-crystal superalloys

    SciTech Connect (OSTI)

    Liu, B.; Raabe, D.; Roters, F.; Arsenlis, A.

    2014-10-01

    The early stage of high-temperature low-stress creep in single-crystal superalloys is characterized by the rapid development of interfacial dislocation networks. Although interfacial motion and dynamic recovery of these dislocation networks have long been expected to control the subsequent creep behavior, direct observation and hence in-depth understanding of such processes has not been achieved. Incorporating recent developments of discrete dislocation dynamics models, we simulate interfacial dislocation motion in the channel structures of single-crystal superalloys, and investigate how interfacial dislocation motion and dynamic recovery are affected by interfacial dislocation interactions and lattice misfit. Different types of dislocation interactions are considered: self, collinear, coplanar, Lomer junction, glissile junction, and Hirth junction. The simulation results show that strong dynamic recovery occurs due to the short-range reactions of collinear annihilation and Lomer junction formation. The misfit stress is found to induce and accelerate dynamic recovery of interfacial dislocation networks involving self-interaction and Hirth junction formation, but slow down the steady interfacial motion of coplanar and glissile junction forming dislocation networks. The insights gained from these simulations on high-temperature low-stress creep of single-crystal superalloys are also discussed.

  10. Ultrafast Dynamic Response of Single Crystal PETN and Beta-HMX...

    Office of Scientific and Technical Information (OSTI)

    Conference: Ultrafast Dynamic Response of Single Crystal PETN and Beta-HMX Citation Details In-Document Search Title: Ultrafast Dynamic Response of Single Crystal PETN and Beta-HMX...

  11. Single-Crystal Elasticity of the Deep-Mantle Magnesite at High...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Single-Crystal Elasticity of the Deep-Mantle Magnesite at High Pressure and Temperature Citation Details In-Document Search Title: Single-Crystal Elasticity of the ...

  12. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    SciTech Connect (OSTI)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  13. Electrical production testing of the D0 Silicon microstrip tracker detector modules

    SciTech Connect (OSTI)

    D0, SMT Production Testing Group; /Fermilab

    2006-03-01

    The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

  14. Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

    SciTech Connect (OSTI)

    Rao, Ashutosh; Patil, Aniket; Chiles, Jeff; Malinowski, Marcin; Novak, Spencer; Richardson, Kathleen; Rabiei, Payam; Fathpour, Sasan

    2015-08-20

    In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge23Sb7S70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 105 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scale dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.

  15. Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rao, Ashutosh; Patil, Aniket; Chiles, Jeff; Malinowski, Marcin; Novak, Spencer; Richardson, Kathleen; Rabiei, Payam; Fathpour, Sasan

    2015-08-20

    In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge23Sb7S70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 105 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scale dense on-chip integration ofmore » high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.« less

  16. Light-trapped, interconnected, Silicon-Film{trademark} modules. Final technical status report

    SciTech Connect (OSTI)

    Hall, R.B.; Rand, J.A.; Ford, D.H.; Ingram, A.E.

    1998-04-01

    AstroPower has continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected module. This report summarized work carried out over a 3-year, cost-shared contract. Key results accomplished during this phase include an NREL-verified conversion efficiency of 12.5% on a 0.47-cm{sup 2} device. The device structure used an insulating substrate and an active layer less than 100 {micro}m thick. A new metalization scheme was designed using insulating crossovers. This technology was demonstrated on a 36-segment, 321-cm{sup 2}, interconnected module. That module was tested at NREL with an efficiency of 9.79%. Further advances in metalization have led to an advanced single back-contact design that will offer low cost through ease of processing and higher performance through reduced shading.

  17. Field Experience with 3-Sun Mirror Module Systems

    SciTech Connect (OSTI)

    Fraas, Dr. Lewis; Avery, James E.; Huang, H,; Minkin, Leonid M; Fraas, J. X.; Maxey, L Curt; Gehl, Anthony C

    2008-01-01

    JX Crystals 3-sun PV mirror modules have now been operating in four separate systems in the field for up to 2 years. Two post-mounted 2-axis tracking arrays of 12 modules each were installed at the Shanghai Flower Park in April of 2006. Then 672 modules were installed in a 100 kW array on N-S horizontal beam trackers at the Shanghai Flower Port in November of 2006. Finally, sets of 4 modules were installed on azimuth-tracking carousels on buildings at the Oak Ridge National Lab and at the U. of Nevada in Las Vegas in late 2007. All of these modules in each of these systems are still operating at their initial power ratings. No degradation in performance has been observed. The benefit of these 3-sun PV mirror modules is that they use 1/3 of the silicon single-crystal cell material in comparison to traditional planar modules. Since aluminum mirrors are much cheaper than high-purity single-crystal silicon-cells, these modules and systems should be much lower in cost when manufactured in high volume.

  18. Shock response of He bubbles in single crystal Cu

    SciTech Connect (OSTI)

    Li, B.; Wang, L.; E, J. C.; Luo, S. N.; Ma, H. H.

    2014-12-07

    With large-scale molecular dynamics simulations, we investigate shock response of He nanobubbles in single crystal Cu. For sufficient bubble size or internal pressure, a prismatic dislocation loop may form around a bubble in unshocked Cu. The internal He pressure helps to stabilize the bubble against plastic deformation. However, the prismatic dislocation loops may partially heal but facilitate nucleation of new shear and prismatic dislocation loops. For strong shocks, the internal pressure also impedes internal jetting, while a bubble assists local melting; a high speed jet breaks a He bubble into pieces dispersed among Cu. Near-surface He bubbles may burst and form high velocity ejecta containing atoms and small fragments, while the ejecta velocities do not follow the three-dimensional Maxwell-Boltzmann distributions expected for thermal equilibrium. The biggest fragment size deceases with increasing shock strength. With a decrease in ligament thickness or an increase in He bubble size, the critical shock strength required for bubble bursting decreases, while the velocity range, space extension and average velocity component along the shock direction, increase. Small bubbles are more efficient in mass ejecting. Compared to voids and perfect single crystal Cu, He bubbles have pronounced effects on shock response including bubble/void collapse, Hugoniot elastic limit (HEL), deformation mechanisms, and surface jetting. HEL is the highest for perfect single crystal Cu with the same orientations, followed by He bubbles without pre-existing prismatic dislocation loops, and then voids. Complete void collapse and shear dislocations occur for embedded voids, as opposed to partial collapse, and shear and possibly prismatic dislocations for He bubbles. He bubbles lower the threshhold shock strength for ejecta formation, and increase ejecta velocity and ejected mass.

  19. Method for thermal processing alumina-enriched spinel single crystals

    DOE Patents [OSTI]

    Jantzen, Carol M.

    1995-01-01

    A process for age-hardening alumina-rich magnesium aluminum spinel to obtain the desired combination of characteristics of hardness, clarity, flexural strength and toughness comprises selection of the time-temperature pair for isothermal heating followed by quenching. The time-temperature pair is selected from the region wherein the precipitate groups have the characteristics sought. The single crystal spinel is isothermally heated and will, if heated long enough pass from its single phase through two pre-precipitates and two metastable precipitates to a stable secondary phase precipitate within the spinel matrix. Quenching is done slowly at first to avoid thermal shock, then rapidly.

  20. Method for thermal processing alumina-enriched spinel single crystals

    DOE Patents [OSTI]

    Jantzen, C.M.

    1995-05-09

    A process for age-hardening alumina-rich magnesium aluminum spinel to obtain the desired combination of characteristics of hardness, clarity, flexural strength and toughness comprises selection of the time-temperature pair for isothermal heating followed by quenching. The time-temperature pair is selected from the region wherein the precipitate groups have the characteristics sought. The single crystal spinel is isothermally heated and will, if heated long enough pass from its single phase through two pre-precipitates and two metastable precipitates to a stable secondary phase precipitate within the spinel matrix. Quenching is done slowly at first to avoid thermal shock, then rapidly. 12 figs.

  1. Acquisition of Single Crystal Growth and Characterization Equipment

    SciTech Connect (OSTI)

    Maple, M. Brian; Zocco, Diego A.

    2008-12-09

    Final Report for DOE Grant No. DE-FG02-04ER46178 'Acquisition of Single Crystal Growth and Characterization Equipment'. There is growing concern in the condensed matter community that the need for quality crystal growth and materials preparation laboratories is not being met in the United States. It has been suggested that there are too many researchers performing measurements on too few materials. As a result, many user facilities are not being used optimally. The number of proficient crystal growers is too small. In addition, insufficient attention is being paid to the enterprise of finding new and interesting materials, which is the driving force behind much of condensed matter research and, ultimately, technology. While a detailed assessment of this situation is clearly needed, enough evidence of a problem already exists to compel a general consensus that the situation must be addressed promptly. This final report describes the work carried out during the last four years in our group, in which a state-of-the-art single crystal growth and characterization facility was established for the study of novel oxides and intermetallic compounds of rare earth, actinide and transition metal elements. Research emphasis is on the physics of superconducting (SC), magnetic, heavy fermion (HF), non-Fermi liquid (NFL) and other types of strongly correlated electron phenomena in bulk single crystals. Properties of these materials are being studied as a function of concentration of chemical constituents, temperature, pressure, and magnetic field, which provide information about the electronic, lattice, and magnetic excitations at the root of various strongly correlated electron phenomena. Most importantly, the facility makes possible the investigation of material properties that can only be achieved in high quality bulk single crystals, including magnetic and transport phenomena, studies of the effects of disorder, properties in the clean limit, and spectroscopic and scattering studies through efforts with numerous collaborators. These endeavors will assist the effort to explain various outstanding theoretical problems, such as order parameter symmetries and electron-pairing mechanisms in unconventional superconductors, the relationship between superconductivity and magnetic order in certain correlated electron systems, the role of disorder in non-Fermi liquid behavior and unconventional superconductivity, and the nature of interactions between localized and itinerant electrons in these materials. Understanding the mechanisms behind strongly correlated electron behavior has important technological implications.

  2. Lithium niobate single-crystal and photo-functional device

    DOE Patents [OSTI]

    Gopalan, Venkatraman; Mitchell, Terrence E.; Kitamura, Kenji; Furukawa, Yasunori

    2001-01-01

    Provided are lithium niobate single-crystal that requires a low voltage of not larger than 10 kV/nm for its ferroelectric polarization inversion and of which the polarization can be periodically inverted with accuracy even at such a low voltage, and a photo-functional device comprising the crystal. The crystal has a molar fraction of Li.sub.2 O/(Nb.sub.2 O.sub.5 +Li.sub.2 O) of falling between 0.49 and 0.52. The photo-functional device can convert a laser ray being incident thereon.

  3. Single crystal metal wedges for surface acoustic wave propagation

    DOE Patents [OSTI]

    Fisher, E.S.

    1980-05-09

    An ultrasonic testing device has been developed to evaluate flaws and inhomogeneities in the near-surface region of a test material. A metal single crystal wedge is used to generate high frequency Rayleigh surface waves in the test material surface by conversion of a slow velocity, bulk acoustic mode in the wedge into a Rayleigh wave at the metal-wedge test material interface. Particular classes of metals have been found to provide the bulk acoustic modes necessary for production of a surface wave with extremely high frequency and angular collimation. The high frequency allows flaws and inhomogeneities to be examined with greater resolution. The high degree of angular collimation for the outgoing ultrasonic beam permits precision angular location of flaws and inhomogeneities in the test material surface.

  4. Single crystal metal wedges for surface acoustic wave propagation

    DOE Patents [OSTI]

    Fisher, Edward S.

    1982-01-01

    An ultrasonic testing device has been developed to evaluate flaws and inhomogeneities in the near-surface region of a test material. A metal single crystal wedge is used to generate high frequency Rayleigh surface waves in the test material surface by conversion of a slow velocity, bulk acoustic mode in the wedge into a Rayleigh wave at the metal-wedge test material interface. Particular classes of metals have been found to provide the bulk acoustic modes necessary for production of a surface wave with extremely high frequency and angular collimation. The high frequency allows flaws and inhomogeneities to be examined with greater resolution. The high degree of angular collimation for the outgoing ultrasonic beam permits precision angular location of flaws and inhomogeneities in the test material surface.

  5. Shock compression experiments on Lithium Deuteride single crystals.

    SciTech Connect (OSTI)

    Knudson, Marcus D.; Desjarlais, Michael P.; Lemke, Raymond W.

    2014-10-01

    S hock compression exper iments in the few hundred GPa (multi - Mabr) regime were performed on Lithium Deuteride (LiD) single crystals . This study utilized the high velocity flyer plate capability of the Sandia Z Machine to perform impact experiments at flyer plate velocities in the range of 17 - 32 km/s. Measurements included pressure, density, and temperature between ~200 - 600 GPa along the Principal Hugoniot - the locus of end states achievable through compression by large amplitude shock waves - as well as pressure and density of re - shock states up to ~900 GPa . The experimental measurements are compared with recent density functional theory calculations as well as a new tabular equation of state developed at Los Alamos National Labs.

  6. Growth and characterization of diammonium copper disulphate hexahydrate single crystal

    SciTech Connect (OSTI)

    Siva Sankari, R.; Perumal, Rajesh Narayana

    2014-03-01

    Graphical abstract: Diammonium copper disulphate hexahydrate (DACS) is one of the most promising inorganic dielectric crystals with exceptional mechanical properties. Good quality crystals of DACS were grown by using solution method in a period of 30 days. The grown crystals were subjected to single crystal X-ray diffraction analysis in order to establish their crystalline nature. Thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis were performed for the crystal. Several solid state physical parameters have been determined for the grown crystals. The dielectric constant and the dielectric loss and AC conductivity of the grown crystal were studied as a function of frequency and temperature has been calculated and plotted. - Highlights: • Diammonium copper disulphate is grown for the first time and CCDC number obtained. • Thermal analysis is done to see the stability range of the crystals. • Band gap and UV cut off wavelength of the crystal are determined to be 2.4 eV and 472.86 nm, respectively. • Dielectric constant, dielectric loss and AC conductivity are plotted as a function of applied field. - Abstract: Diammonium copper disulphate hexahydrate is one of the most promising inorganic crystals with exceptional dielectric properties. A good quality crystal was harvested in a 30-day period using solution growth method. The grown crystal was subjected to various characterization techniques like single crystal X-ray diffraction analysis, thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis. Unit cell dimensions of the grown crystal have been identified from XRD studies. Functional groups of the title compounds have been identified from FTIR studies. Thermal stability of the samples was checked by TG/DTA studies. Band gap of the crystal was calculated. The dielectric constant and dielectric loss were studied as a function of frequency of the applied field. AC conductivity was plotted as a function of temperature.

  7. Measurement of thermal conductivity in proton irradiated silicon

    SciTech Connect (OSTI)

    Marat Khafizov; Clarissa Yablinsky; Todd Allen; David Hurley

    2014-04-01

    We investigate the influence of proton irradiation on thermal conductivity in single crystal silicon. We apply laser based modulated thermoreflectance technique to extract the change in conductivity of the thin layer damaged by proton irradiation. Unlike time domain thermoreflectance techniques that require application of a metal film, we perform our measurement on uncoated samples. This provides greater sensitivity to the change in conductivity of the thin damaged layer. Using sample temperature as a parameter provides a means to deduce the primary defect structures that limit thermal transport. We find that under high temperature irradiation the degradation of thermal conductivity is caused primarily by extended defects.

  8. Advances in amorphous silicon alloy-based multijunction cells and modules

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.; Banerjee, A.; Glatfelter, T.; Xu, X. )

    1992-12-01

    Multijunction amorphous silicon alloy-based solar cells and modules offer the potential of obtaining high efficiency with long-term stability against light-induced degradation. We have studied the stability of the component cells of the multijunction devices prepared under different deposition conditions. We observe a definite correlation between the microstructure of the intrinsic material and initial and light-degraded performance of the cells. Using suitable deposition conditions and optimum matching of the component cells, we have fabricated double-junction dual-bandgap cells which show stabilized active-area efficiency of 11% after 600 hours of one-sun illumination at 50 [degree]C. Double-junction and triple-junction modules of 900 cm[sup 2] area have been fabricated, and the performance of these panels will be discussed.

  9. Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence

    Office of Scientific and Technical Information (OSTI)

    on magnetic shape memory effect (Journal Article) | SciTech Connect Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magnetic shape memory effect Citation Details In-Document Search Title: Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magnetic shape memory effect Enhanced magnetic hysteresis due to boron doping in combination with magnetic shape memory effect in Ni-Mn-Ga single crystal results in new interesting functionality of

  10. World's largest single crystal of gold verified by Los Alamos instruments

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Los Alamos verifies largest single gold crystal World's largest single crystal of gold verified by Los Alamos instruments Using Lujan Center's HIPPO instrument, researchers probed the specimen with neutrons to gather critical information December 22, 2014 World's largest single crystal of gold verified by Los Alamos instruments Neutron diffraction data collected on the single-crystal diffraction (SCD) instrument at the Lujan Center, from the Venezuelan gold sample, indicate that the sample is a

  11. Single Crystal Preparation for High-Pressure Experiments in the Diamond

    Office of Scientific and Technical Information (OSTI)

    Anvil Cell (Conference) | SciTech Connect Conference: Single Crystal Preparation for High-Pressure Experiments in the Diamond Anvil Cell Citation Details In-Document Search Title: Single Crystal Preparation for High-Pressure Experiments in the Diamond Anvil Cell Most research conducted in diamond anvil cells (DAC) is performed on polycrystalline samples. While data from polycrystalline samples are sufficient for determining the bulk properties, high-pressure experiments on single crystals

  12. Mechanism of relaxation polarization in lithium fluoride single crystals

    SciTech Connect (OSTI)

    Annenkov, Yu.M.; Boev, S.G.; Kozhemyakin, V.A.; Fursa, T.V.

    1988-12-01

    The authors have compared the thermally stimulated currents and the pulsed electromagnetic radiation of thermoelectrets and mechanoelectrets made from lithium fluoride single crystals grown without specially introduced impurities. The samples with platinum electrodes applied to the surface by cathodic sputtering were deformed along the largest face up to relative strain /var epsilon/ equal to 1.4%. Then the thermally stimulated currents were registered upon heating the samples at the rate of 3-4 deg/min. In other experiments, after deformation of the samples under analogous conditions they registered the pulsed electromagnetic signals for the samples upon nonisothermal annealing. Plane-parallel samples were polarized at the temperature 473 K and electric field intensity 5 kV/cm for 10-15 min. Since thermally stimulated currents and pulsed electromagnetic signals at 363-383 K decreased substantially over the course of several hours after polarization or deformation of the samples and were practically unregistered after one day, while the volume charge in LiF can be retained over the course of many months, they may conclude that the first relaxation maximum is not connected with disruption of the volume charge. It is possible due to localization of cationic vacancies on individual dislocations, while the second maximum may be due to such dislocation pile-ups.

  13. DEVELOPMENT OF PROTECTIVE COATINGS FOR SINGLE CRYSTAL TURBINE BLADES

    SciTech Connect (OSTI)

    Amarendra K. Rai

    2006-12-04

    Turbine blades in coal derived syngas systems are subject to oxidation and corrosion due to high steam temperature and pressure. Thermal barrier coatings (TBCs) are developed to address these problems. The emphasis is on prime-reliant design and a better coating architecture, having high temperature and corrosion resistance properties for turbine blades. In Phase I, UES Inc. proposed to develop, characterize and optimize a prime reliant TBC system, having smooth and defect-free NiCoCrAlY bond layer and a defect free oxide sublayer, using a filtered arc technology. Phase I work demonstrated the deposition of highly dense, smooth and defect free NiCoCrAlY bond coat on a single crystal CMSX-4 substrate and the deposition of alpha-alumina and yttrium aluminum garnet (YAG) sublayer on top of the bond coat. Isothermal and cyclic oxidation test and pre- and post-characterization of these layers, in Phase I work, (with and without top TBC layer of commercial EB PVD YSZ) revealed significant performance enhancement.

  14. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; Parashchuk, T. O.; Freik, D. M.; Panchuk, O. E.; James, R. B.; Gorichok, I. V.

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and themore » parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.« less

  15. Radiation tolerance of piezoelectric bulk single-crystal aluminum nitride

    SciTech Connect (OSTI)

    David A. Parks; Bernhard R. Tittmann

    2014-07-01

    For practical use in harsh radiation environments, we pose selection criteria for piezoelectric materials for nondestructive evaluation (NDE) and material characterization. Using these criteria, piezoelectric aluminum nitride is shown to be an excellent candidate. The results of tests on an aluminumnitride-based transducer operating in a nuclear reactor are also presented. We demonstrate the tolerance of single-crystal piezoelectric aluminum nitride after fast and thermal neutron fluences of 1.85 × 1018 neutron/cm2 and 5.8 × 1018 neutron/cm2, respectively, and a gamma dose of 26.8 MGy. The radiation hardness of AlN is most evident from the unaltered piezoelectric coefficient d33, which measured 5.5 pC/N after a fast and thermal neutron exposure in a nuclear reactor core for over 120 MWh, in agreement with the published literature value. The results offer potential for improving reactor safety and furthering the understanding of radiation effects on materials by enabling structural health monitoring and NDE in spite of the high levels of radiation and high temperatures, which are known to destroy typical commercial ultrasonic transducers.

  16. Light-trapped interconnected, Silicon-Film{trademark} modules. Annual technical status report, 18 November 1995--18 November 1996

    SciTech Connect (OSTI)

    Hall, R.B.; Rand, J.A.; Cotter, J.E.; Ford, D.H.

    1997-02-01

    AstroPower is developing a module-manufacturing technology based on a film-silicon technology. AstroPower, as a Technology Partner in the Thin-Film PV Partnership, is employing its Silicon-Film{trademark} technology to develop an advanced thin-silicon-based product. This module will combine the design and process features of the most advanced thin-silicon solar cells with light-trapping. These cells will be integrated into a low-cost interconnected array. During the second year of the 3-year project, AstroPower`s emphasis was on developing key submodule fabrication processes. Key results of the work include developing a new thin-film growth concept process based on attaching the low-cost substrate to the thin silicon layer after film growth; developing a new technique to achieve light-trapping in thin layers of silicon based on pigmented high-temperature glass materials; and developing key submodule fabrication processes, including contact grid design, subelement isolation, and screen-printed interconnection.

  17. Method of forming buried oxide layers in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  18. Arc-melting preparation of single crystal LaB.sub.6 cathodes

    DOE Patents [OSTI]

    Gibson, Edwin D.; Verhoeven, John D.

    1977-06-21

    A method for preparing single crystals of lanthanum hexaboride (LaB.sub.6) by arc melting a rod of compacted LaB.sub.6 powder. The method is especially suitable for preparing single crystal LaB.sub.6 cathodes for use in scanning electron microscopes (SEM) and scanning transmission electron microscopes (STEM).

  19. Apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel (San Jose, CA)

    1986-05-20

    Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  20. In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing: Preprint

    SciTech Connect (OSTI)

    Spataru, Sergiu; Hacke, Pater; Sera, Dezso

    2015-09-15

    We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. From the analysis we determine three main categories of failure modes associated with the module degradation consisting of: shunting, recombination losses, increased series resistance losses, and current mismatch losses associated with a decrease in photo-current generation by removal of some cell areas due to cell fractures. Based on the analysis, we propose an in-situ module power loss monitoring procedure that relies on dark current-voltage measurements taken during the stress test, and initial and final module flash testing, to determine the power degradation characteristic of the module.

  1. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    SciTech Connect (OSTI)

    Pickrell, Gary; Scott, Brian; Wang, Anbo; Yu, Zhihao

    2013-12-31

    This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier facility in Terre Haute, Indiana. Due to business conditions at industrial partner and several logistical problems, this field test was not successful. An alternative high-temperature sensing system using sapphire wafer-based extrinsic Fabry-Perot interferometry was then developed as a significant improvement over the BPDI solution. From June 2006 to June 2008, three consecutive field tests were performed with the new sapphire wafer sensors at the TECO coal gasifier in Tampa, Florida. One of the sensors survived in the industrial coal gasifier for 7 months, over which time the existing thermocouples were replaced twice. The outcome of these TECO field tests suggests that the sapphire wafer sensor has very good potential to be commercialized. However packaging and sensor protection issues need additional development. During Phase III, several major improvements in the design and fabrication process of the sensor have been achieved through experiments and theoretical analysis. Studies on the property of the key components in the sensor head, including the sapphire fiber and sapphire wafer, were also conducted, for a better understanding of the sensor behavior. A final design based on all knowledge and experience has been developed, free of any issues encountered during the entire research. Sensors with this design performed well as expected in lab long-term tests, and were deployed in the sensing probe of the final coal-gasifier field test. Sensor packaging and protection was improved through materials engineering through testing of packaging designs in two blank probe packaging tests at Eastman Chemical in Kingsport, TN. Performance analysis of the blank probe packaging resulted in improve package designs culminating in a 3rd generation probe packaging utilized for the full field test of the sapphire optical sensor and materials designed sensor packaging.

  2. Growth and properties of Lithium Salicylate single crystals

    SciTech Connect (OSTI)

    Zaitseva, N; Newby, J; Hull, G; Saw, C; Carman, L; Cherepy, N; Payne, S

    2009-02-13

    An attractive feature of {sup 6}Li containing fluorescence materials that determines their potential application in radiation detection is the capture reaction with slow ({approx}< 100 keV) neutrons: {sup 6}Li + n = {sup 4}He + {sup 3}H + 4.8MeV. The use of {sup 6}Li-salicylate (LiSal, LiC{sub 6}H{sub 5}O{sub 3}) for thermal neutron detection was previously studied in liquid and polycrystalline scintillators. The studies showed that both liquid and polycrystalline LiSal scintillators could be utilized in pulse shape discrimination (PSD) techniques that enable separation of neutrons from the background gamma radiation. However, it was found that the efficiency of neutron detection using LiSal in liquid solutions was severely limited by its low solubility in commonly used organic solvents like, for example, toluene or xylene. Better results were obtained with neutron detectors containing the compound in its crystalline form, such as pressed pellets, or microscopic-scale (7-14 micron) crystals dispersed in various media. The expectation drown from these studies was that further improvement of pulse height, PSD, and efficiency characteristics could be reached with larger and more transparent LiSal crystals, growth of which has not been reported so far. In this paper, we present the first results on growth and characterization of relatively large, a cm-scale size, single crystals of LiSal with good optical quality. The crystals were grown both from aqueous and anhydrous (methanol) media, mainly for neutron detection studies. However, the results on growth and structural characterization may be interesting for other fields where LiSal, together with other alkali metal salicylates, is used for biological, medical, and chemical (as catalyst) applications.

  3. Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its...

    Office of Scientific and Technical Information (OSTI)

    crystal and its influence on magnetic shape memory effect Citation Details In-Document Search Title: Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on ...

  4. Spin-orbit tuned metal-insulator transitions in single-crystal...

    Office of Scientific and Technical Information (OSTI)

    Title: Spin-orbit tuned metal-insulator transitions in single-crystal SrIr1-xRhxO (0x1) SrIrO is a magnetic insulator driven by spin-orbit interaction (SOI) ...

  5. Single-crystal X-ray diffraction at extreme conditions: a review (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Single-crystal X-ray diffraction at extreme conditions: a review Citation Details In-Document Search Title: Single-crystal X-ray diffraction at extreme conditions: a review Authors: Ballaran, Tiziana Boffa ; Kurnosov, Alexander ; Trots, Dmytro [1] + Show Author Affiliations (Bayreuth) [Bayreuth Publication Date: 2013-12-12 OSTI Identifier: 1107433 Resource Type: Journal Article Resource Relation: Journal Name: High Pressure Res.; Journal Volume: 33; Journal Issue:

  6. Solid-state syntheses and single-crystal characterizations of three

    Office of Scientific and Technical Information (OSTI)

    tetravalent thorium and uranium silicates (Journal Article) | DOE PAGES Publisher's Accepted Manuscript: Solid-state syntheses and single-crystal characterizations of three tetravalent thorium and uranium silicates This content will become publicly available on January 27, 2017 Title: Solid-state syntheses and single-crystal characterizations of three tetravalent thorium and uranium silicates Authors: Jin, Geng Bang ; Soderholm, L. Publication Date: 2015-01-01 OSTI Identifier: 1246691

  7. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    SciTech Connect (OSTI)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2005-11-01

    This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

  8. Research on stable, high-efficiency amorphous silicon multijunction modules. Final subcontract report, 1 January 1991--31 August 1994

    SciTech Connect (OSTI)

    Guha, S.

    1994-10-01

    The principal objective of this program is to conduct research on semiconductor materials and non-semiconductor materials to enhance the performance of multibandgap, multijunction, large-area amorphous silicon-based alloy modules. The goal for this program is to demonstrate stabilized module efficiency of 12% for multijunction modules of area greater than 900 cm{sup 2}. Double-junction and triple-junction cells are made on Ag/ZnO back reflector deposited on stainless steel substrates. The top cell uses a-Si alloy; a-SiGe alloy is used for the i layer in the middle and the bottom cells. After evaporation of antireflection coating, silver grids and bus bars are put on the top surface, and the panel is encapsulated in an ethylene vinyl acetate (EVA)/Tefzel structure to make a one-square-foot monolithic module.

  9. Testing and Analysis for Lifetime Prediction of Crystalline Silicon PV Modules Undergoing Degradation by System Voltage Stress: Preprint

    SciTech Connect (OSTI)

    Hacke, P.; Smith, R.; Terwiliger, K.; Glick, S.; Jordan, D.; Johnston, S.; Kempe, M.; Kurtz, S.

    2012-07-01

    Acceleration factors are calculated for crystalline silicon PV modules under system voltage stress by comparing the module power during degradation outdoors to that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined, and the probability of module failure at an arbitrary temperature is predicted. To obtain statistical data for multiple modules over the course of degradation in-situ of the test chamber, dark I-V measurements are obtained and transformed using superposition, which is found well suited for rapid and quantitative evaluation of potential-induced degradation. It is determined that shunt resistance measurements alone do not represent the extent of power degradation. This is explained with a two-diode model analysis that shows an increasing second diode recombination current and ideality factor as the degradation in module power progresses. Failure modes of the modules stressed outdoors are examined and compared to those stressed in accelerated tests.

  10. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    University of Illinois

    2009-04-21

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  11. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne

    2012-06-12

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  12. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    Rogers, John A.; Khang, Dahl -Young; Sun, Yugang; Menard, Etienne

    2015-08-11

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  13. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    SciTech Connect (OSTI)

    Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne

    2014-06-17

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  14. Research on stable, high-efficiency amorphous silicon multijunction modules. Semiannual subcontract report, 1 March 1993--30 November 1993

    SciTech Connect (OSTI)

    Guha, S.

    1994-03-01

    This report describes the progress made during the first half of Phase III of the R&D program to obtain high-efficiency amorphous silicon alloy multijunction modules. The highlight of the work includes (1) demonstration of the world`s highest initial module efficiency (area of 0.09 m{sup 2}) of 11.4% as confirmed by NREL, and (2) demonstration of stable module efficiency of 9.5% after 1-sun light soaking for 1000 h at 50{degrees}C. In addition, fundamental studies were carried out to improve material properties of the component cells of the multijunction structure and to understand the optical losses associated with the back reflector.

  15. Surface Binding and Organization of Sensitizing Dyes on Metal Oxide Single Crystal Surfaces

    SciTech Connect (OSTI)

    Parkinson, Bruce

    2010-06-04

    Even though investigations of dye-sensitized nanocrystalline semiconductors in solar cells has dominated research on dye-sensitized semiconductors over the past two decades. Single crystal electrodes represent far simpler model systems for studying the sensitization process with a continuing train of studies dating back more than forty years. Even today single crystal surfaces prove to be more controlled experimental models for the study of dye-sensitized semiconductors than the nanocrystalline substrates. We analyzed the scientific advances in the model sensitized single crystal systems that preceded the introduction of nanocrystalline semiconductor electrodes. It then follows the single crystal research to the present, illustrating both their striking simplicity of use and clarity of interpretation relative to nanocrystalline electrodes. Researchers have employed many electrochemical, photochemical and scanning probe techniques for studying monolayer quantities of sensitizing dyes at specific crystallographic faces of different semiconductors. These methods include photochronocoulometry, electronic spectroscopy and flash photolysis of dyes at potential-controlled semiconductor electrodes and the use of total internal reflection methods. In addition, we describe the preparation of surfaces of single crystal SnS2 and TiO2 electrodes to serve as reproducible model systems for charge separation at dye sensitized solar cells. This process involves cleaving the SnS2 electrodes and a photoelectrochemical surface treatment for TiO2 that produces clean surfaces for sensitization (as verified by AFM) resulting in near unity yields for electron transfer from the molecular excited dyes into the conduction band.

  16. Process and apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel (San Jose, CA)

    1988-06-28

    Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  17. High-silicon {sup 238}PuO{sub 2} fuel characterization study: Half module impact tests

    SciTech Connect (OSTI)

    Reimus, M.A.H.

    1997-01-01

    The General-Purpose Heat Source (GPHS) provides power for space missions by transmitting the heat of [sup 238]Pu decay to an array of thermoelectric elements. The modular GPHS design was developed to address both survivability during launch abort and return from orbit. Previous testing conducted in support of the Galileo and Ulysses missions documented the response of GPHSs to a variety of fragment- impact, aging, atmospheric reentry, and Earth-impact conditions. The evaluations documented in this report are part of an ongoing program to determine the effect of fuel impurities on the response of the heat source to conditions baselined during the Galileo/Ulysses test program. In the first two tests in this series, encapsulated GPHS fuel pellets containing high levels of silicon were aged, loaded into GPHS module halves, and impacted against steel plates. The results show no significant differences between the response of these capsules and the behavior of relatively low-silicon fuel pellets tested previously.

  18. High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003

    SciTech Connect (OSTI)

    Rand, J. A.; Culik, J. S.

    2005-10-01

    The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

  19. Electrodynamic Properties of Single-Crystal and Thin-Film Strontium Titanate

    SciTech Connect (OSTI)

    Findikoglu, A.T.; Jia, Q.; Reagor, D.W.; Kwon, C.; Rasmussen, K.O.

    1999-05-13

    The authors present a comparative study of broadband electrodynamic properties of coplanar waveguides made from nonlinear dielectric single-crystal and thin-film SrTiO{sub 3} (STO) with high-temperature superconducting thin-film YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} electrodes. The waveguides that use single-crystal STO exhibit a monotonic increase in refractive index, dielectric nonlinearity, and dissipation with decreasing temperature (from 80 K to 20 K), whereas those based on thin-film STO show similar but weaker effects with increasing temperature. Under dc bias, both types of waveguides show reduced refractive index, but dissipation increases in the case of single-crystal STO, while it decreases in the case of STO thin-films.

  20. Growth of large naphthalene and anthracene single-crystal sheets at the liquid–air interface

    SciTech Connect (OSTI)

    Postnikov, V. A.; Chertopalov, S. V.

    2015-07-15

    The growth of organic single crystals of naphthalene (C{sub 10}H{sub 8}) and anthracene (C{sub 14}H{sub 10}) at the liquid‒air interface from a mixture of solvents has been investigated. The growth technique used in the study makes it possible to obtain single-crystal sheets up to 10 mm in size for 24 h. The surface morphology and structure of the crystals have been analyzed by optical microscopy and X-ray diffraction. C{sub 10}H{sub 8} and C{sub 14}H{sub 10} single crystals grow coplanarly along the (001) plane. A thermodynamic model of the flat-crystal nucleus formation at the liquid‒air interface, based on the analysis of the change in the free Gibbs energy, is considered.

  1. Performance of a silicon photovoltaic module under enhanced illumination and selective filtration of incoming radiation with simultaneous cooling

    SciTech Connect (OSTI)

    Maiti, Subarna; Vyas, Kairavi; Ghosh, Pushpito K.

    2010-08-15

    A promising option to reduce the cost of silicon photovoltaic systems is to concentrate the sunlight incident on the solar cells to increase the output power. However, this leads to higher module temperatures which affects performance adversely and may also cause long term damage. Proper cooling is therefore necessary to operate the system under concentrated radiation. The present work was undertaken to circumvent the problem in practical manner. A suitable liquid, connected to a heat exchanger, was placed in the housing of the photovoltaic module and unwanted wavelengths of solar radiation were filtered out to minimise overheating of the cells. The selection of the liquid was based on factors such as boiling point, transparency towards visible radiation, absorption of infrared and ultraviolet radiation, stability, flow characteristics, heat transfer properties, and electrical nonconductivity. Using a square parabolic type reflector, more than two fold increase in output power was realised on a clear sunny day employing a 0.13 m{sup 2} silicon solar module. Without the cooling arrangement the panel temperature rose uncontrollably. (author)

  2. Research on stable, high-efficiency amorphous silicon multijunction modules. Annual subcontract report, 1 December 1991--31 October 1992

    SciTech Connect (OSTI)

    Ghosh, M.; DelCueto, J.: Kampas, F.; Xi, J.

    1993-02-01

    This report describes results from the first phase of a three-phase contract for the development of stable, high-efficiency, same-band-gap, amorphous silicon (a-Si) multijunction photovoltaic (PV) modules. The program involved improving the properties of individual layers of semiconductor and non-semiconductor materials and small-area single-junction and multijunction devices, as well as the multijunction modules. The semiconductor materials research was performed on a-Si p, i, and n layers, and on microcrystalline silicon n layers. These were deposited using plasma-enhanced chemical vapor deposition. The non-semiconductor materials studied were tin oxide, for use as a transparent-conducting-oxide (TCO), and zinc oxide, for use as a back reflector and as a buffer layer between the TCO and the semiconductor layers. Tin oxide was deposited using atmospheric-pressure chemical vapor deposition. Zinc oxide was deposited using magnetron sputtering. The research indicated that the major challenge in the fabrication of a-Si multijunction PV modules is the contact between the two p-i-n cells. A structure that has low optical absorption but that also facilitates the recombination of electrons from the first p-i-n structure with holes from the second p-i-n structure is required. Non-semiconductor layers and a-Si semiconductor layers were tested without achieving the desired result.

  3. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

    DOE Patents [OSTI]

    Charache, G.W.; Baldasaro, P.F.; Nichols, G.J.

    1998-06-23

    A thermophotovoltaic energy conversion device and a method for making the device are disclosed. The device includes a substrate formed from a bulk single crystal material having a bandgap (E{sub g}) of 0.4 eV < E{sub g} < 0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers. 12 figs.

  4. Single Crystal Preparation for High-Pressure Experiments in the Diamond

    Office of Scientific and Technical Information (OSTI)

    Anvil Cell (Conference) | SciTech Connect Conference: Single Crystal Preparation for High-Pressure Experiments in the Diamond Anvil Cell Citation Details In-Document Search Title: Single Crystal Preparation for High-Pressure Experiments in the Diamond Anvil Cell × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize

  5. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

    DOE Patents [OSTI]

    Charache, Greg W.; Baldasaro, Paul F.; Nichols, Greg J.

    1998-01-01

    A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eVsingle crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers.

  6. Iron-based composition for magnetocaloric effect (MCE) applications and method of making a single crystal

    DOE Patents [OSTI]

    Evans, III, Boyd Mccutchen; Kisner, Roger A.; Ludtka, Gail Mackiewicz; Ludtka, Gerard Michael; Melin, Alexander M.; Nicholson, Donald M.; Parish; , Chad M.; Rios, Orlando; Sefat, Athena S.; West, David L.; Wilgen, John B.

    2016-02-09

    A method of making a single crystal comprises heating a material comprising magnetic anisotropy to a temperature T sufficient to form a melt of the material. A magnetic field of at least about 1 Tesla is applied to the melt at the temperature T, where a magnetic free energy difference .DELTA.G.sub.m between different crystallographic axes is greater than a thermal energy kT. While applying the magnetic field, the melt is cooled at a rate of about 30.degree. C./min or higher, and the melt solidifies to form a single crystal of the material.

  7. Ultrafast Dynamic Response of Single Crystal PETN and Beta-HMX (Conference)

    Office of Scientific and Technical Information (OSTI)

    | SciTech Connect Conference: Ultrafast Dynamic Response of Single Crystal PETN and Beta-HMX Citation Details In-Document Search Title: Ultrafast Dynamic Response of Single Crystal PETN and Beta-HMX Authors: Zaug, J M ; Armstrong, M R ; Crowhurst, J C ; Feranti, L ; Swan, R ; Gross, R ; Teshlich, N E ; Wall, M ; Austin, R A ; Fried, L E Publication Date: 2014-06-30 OSTI Identifier: 1149550 Report Number(s): LLNL-CONF-656341 DOE Contract Number: DE-AC52-07NA27344 Resource Type: Conference

  8. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2008-09-01

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  9. Optical characteristics of ZnO single crystal grown by the hydrothermal method

    SciTech Connect (OSTI)

    Chen, G. Z.; Yin, J. G. E-mail: yjg@siom.ac.cn; Zhang, L. H.; Zhang, P. X.; Wang, X. Y.; Liu, Y. C.; Zhang, C. L.; Gu, S. L.; Hang, Y.

    2015-12-15

    ZnO single crystals have been grown by the hydrothermal method. Raman scattering and Photoluminescence spectroscopy (PL) have been used to study samples of ZnO that were unannealed or annealed in different ambient gases. It is suggested that the green emission may originate from defects related to copper in our samples.

  10. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2005-11-01

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  11. Carousel Trackers with 1-Sun or 3-Sun Modules for Commercial Building Rooftops

    SciTech Connect (OSTI)

    Gehl, Anthony C; Maxey, L Curt; Fraas, Dr. Lewis; Avery, James E.; Minkin, Leonid M; Huang, H,

    2008-01-01

    The goal is lower cost solar electricity. Herein, two evolutional steps are described toward achieving this goal. The first step is to follow the sun with a solar tracker. Herein, a carousel tracker is described for mounting on commercial building flat rooftops in order to produce more kWh per kW relative to fixed PV modules. The second evolutionary improvement is to produce lower cost 3-sun CPV modules where two thirds of the expensive single crystal silicon material is replaced by less expensive mirror material. This paper describes the performance and durability of two prototype installations demonstrating these evolutionary innovations. In the first case, the installation and operation of 2 carousels equipped with traditional flat plate modules is described. In the second case, the operation of a carousel equipped with new 3-sun CPV modules is described. Both systems have been operating as expected for several months through the winter of 2007.

  12. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Semiannual technical report, 1 January 1996--30 June 1996

    SciTech Connect (OSTI)

    Wohlgemuth, J.

    1997-01-01

    Two specific objectives of Solarex`s program are to reduce the manufacturing cost for polycrystalline silicon photovoltaic modules to less than $1.20/watt and to increase the manufacturing capacity by a factor of three. This report highlights accomplishments during the period of January 1 through June 30, 1996. Accomplishments include: began the conversion of production casting stations to increase ingot size; operated the wire saw in a production mode with higher yields and lower costs than achieved on the ID saws; developed and qualified a new wire guide coating material that doubles the wire guide lifetime and produces significantly less scatter in wafer thickness; completed a third pilot run of the cost-effective Al paste back-surface-field (BSF) process, verifying a 5% increase in cell efficiency and demonstrating the ability to process and handle the BSF paste cells; completed environmental qualification of modules using cells produced by an all-print metallization process; optimized the design of the 15.2-cm by 15.2-cm polycrystalline silicon solar cells; demonstrated the application of a high-efficiency process in making 15.2-cm by 15.2-cm solar cells; demonstrated that cell efficiency increases with decreasing wafer thickness for the Al paste BSF cells; qualified a vendor-supplied Tedlar/ethylene vinyl acetate (EVA) laminate to replace the combination of separate sheets of EVA and Tedlar backsheet; demonstrated the operation of a prototype unit to trim/lead attach/test modules; and demonstrated the operation of a wafer pull-down system for cassetting wet wafers.

  13. Silicon on insulator self-aligned transistors

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  14. Investigation on crystalline perfection, mechanical, piezoelectric and ferroelectric properties of L-tartaric acid single crystal

    SciTech Connect (OSTI)

    Murugan, G. Senthil Ramasamy, P.

    2014-04-24

    Polar organic nonlinear optical material, L-tartaric acid single crystals have been grown from slow evaporation solution growth technique. Single crystal X-ray diffraction study indicates that the grown crystal crystallized in monoclinic system with space group P2{sub 1}. Crystalline perfection of the crystal has been evaluated by high resolution X-ray diffraction technique and it reveals that the crystal quality is good and free from structural grain boundaries. Mechanical stability of the crystal has been analyzed by Vickers microhardness measurement and it exhibits reverse indentation size effect. Piezoelectric d{sub 33} co-efficient for the crystal has been examined and its value is 47 pC/N. The ferroelectric behaviour of the crystal was analyzed by polarization-electric field hysteresis loop measurement.

  15. Method for preparing homogeneous single crystal ternary III-V alloys

    DOE Patents [OSTI]

    Ciszek, Theodore F.

    1991-01-01

    A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition that would freeze into the desired crystal composition. The alloy of the floating crucilbe is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.

  16. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    DOE Patents [OSTI]

    Vertes, Akos; Walker, Bennett N.

    2012-02-07

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  17. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    DOE Patents [OSTI]

    Vertes, Akos; Walker, Bennett N

    2015-04-07

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  18. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    DOE Patents [OSTI]

    Vertes, Akos; Walker, Bennett N.

    2013-09-10

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  19. Precise orientation of single crystals by a simple x-ray diffraction rocking curve method

    SciTech Connect (OSTI)

    Doucette, L.D.; Pereira da Cunha, M.; Lad, R.J.

    2005-03-01

    A simple method has been developed for accurately measuring the crystallographic orientation of a single crystal boule, employing a conventional four-circle x-ray diffraction arrangement in the rocking curve mode which relaxes the need for precise instrument and/or reference alignment. By acquiring a total of eight rocking curve measurements at specific orientations about the specimen azimuth, the absolute miscut angle between a crystal surface and the desired crystallographic plane can be resolved to within {+-}0.01 deg.

  20. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, H.; Lei, H.; Klobes, B.; Warren, J. B.; Hermann, R. P.; Petrovic, C.

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  1. Growth and characterization of 4-chloro-3-nitrobenzophenone single crystals using vertical Bridgman technique

    SciTech Connect (OSTI)

    Aravinth, K. Babu, G. Anandha Ramasamy, P.

    2014-04-24

    4-chloro-3-nitrobenzophenone (4C3N) has been grown by using vertical Bridgman technique. The grown crystal was confirmed by Powder X-ray diffraction analysis. The crystalline perfection of the grown crystal was examined by high-resolution X-ray diffraction study. The fluorescence spectra of grown 4C3N single crystals exhibit emission peak at 575 nm. The micro hardness measurements were used to analyze the mechanical property of the grown crystal.

  2. Dependence of dynamic fracture resistance on crack velocity in tungsten: Pt. 1. Single crystals

    SciTech Connect (OSTI)

    Liv, J.M.; Shen, B.W.

    1984-06-01

    The dependence of dynamic fracture resistance on crack propagation velocity on (100) in tungsten has been examined. A correlation is obtained between the measured local crack velocity with the surfac and subsurface deformations. Based on the experimental results on one pass, two passes, and prestrained, electron beam zone refined single crystals, a discussion is given on the slip modes activated at the crack tip, the contributions to the dynamic fracture resistance from dislocations and surface features and from the preexisting deformed microstructure.

  3. Enhancing ionic conductivity of bulk single-crystal yttria-stabilized zirconia by tailoring dopant distribution

    SciTech Connect (OSTI)

    Lee, E.; Prinz, F. B.; Cai, W.

    2011-02-11

    We present an ab initiobased kinetic Monte Carlo model for ionic conductivity in single-crystal yttria-stabilized zirconia. Ionic interactions are taken into account by combining density functional theory calculations and the cluster expansion method and are found to be essential in reproducing the effective activation energy observed in experiments. The model predicts that the effective energy barrier can be reduced by 0.150.25 eV by arranging the dopant ions into a superlattice.

  4. Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Paulauskas, I. E.; Jellison, G. E.; Boatner, L. A.; Brown, G. M.

    2011-01-01

    The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with themore » significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.« less

  5. Mechanisms of High Temperature/Low Stress Creep of Ni-Based Superalloy Single Crystals

    SciTech Connect (OSTI)

    Michael J. Mills

    2009-03-05

    Cast nickel-based superalloys are used for blades in land-based, energy conversion and powerplant applications, as well as in aircraft gas turbines operating at temperatures up to 1100 C, where creep is one of the life-limiting factors. Creep of superalloy single crystals has been extensively studied over the last several decades. Surprisingly, only recently has work focused specifically on the dislocation mechanisms that govern high temperature and low stress creep. Nevertheless, the perpetual goal of better engine efficiency demands that the creep mechanisms operative in this regime be fully understood in order to develop alloys and microstructures with improved high temperature capability. At present, the micro-mechanisms controlling creep before and after rafting (the microstructure evolution typical of high temperature creep) has occurred have yet to be identified and modeled, particularly for [001] oriented single crystals. This crystal orientation is most interesting technologically since it exhibits the highest creep strength. The major goal of the program entitled ''Mechanisms of High Temperature/Low Stress Creep of Ni-Based Superalloy Single Crystals'' (DOE Grant DE-FG02-04ER46137) has been to elucidate these creep mechanisms in cast nickel-based superalloys. We have utilized a combination of detailed microstructure and dislocation substructure analysis combined with the development of a novel phase-field model for microstructure evolution.

  6. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2006-08-01

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  7. Considerations for a Standardized Test for Potential-Induced Degradation of Crystalline Silicon PV Modules (Presentation)

    SciTech Connect (OSTI)

    Hacke, P.

    2012-03-01

    Over the past decade, there have been observations of module degradation and power loss because of the stress that system voltage bias exerts. This results in part from qualification tests and standards note adequately evaluating for the durability of modules to the long-term effects of high voltage bias that they experience in fielded arrays. This talk deals with factors for consideration, progress, and information still needed for a standardized test for degradation due to system voltage stress.

  8. Solid-state syntheses and single-crystal characterizations of three tetravalent thorium and uranium silicates

    SciTech Connect (OSTI)

    Jin, Geng Bang Soderholm, L.

    2015-01-15

    Colorless crystals of ThSiO{sub 4} (huttonite) (1) and (Ca{sub 0.5}Na{sub 0.5}){sub 2}NaThSi{sub 8}O{sub 20} (2) have been synthesized by the solid-state reactions of ThO{sub 2}, CaSiO{sub 3}, and Na{sub 2}WO{sub 4} at 1073 K. Green crystals of (Ca{sub 0.5}Na{sub 0.5}){sub 2}NaUSi{sub 8}O{sub 20} (3) have been synthesized by the solid-state reactions of UO{sub 2}, CaSiO{sub 3}, and Na{sub 2}WO{sub 4} at 1003 K. All three compounds have been characterized by single-crystal X-ray diffraction. Compound 1 adopts a monazite-type three-dimensional condensed structure, which is built from edge- and corner-shared ThO{sub 9} polyhedra and SiO{sub 4} tetrahedra. Compounds 2 and 3 are isostructural and they crystallize in a steacyite-type structure. The structure consists of discrete pseudocubic [Si{sub 8}O{sub 20}]{sup 8−} polyanions, which are connected by An{sup 4+} cations into a three-dimensional framework. Each An atom coordinates to eight monodentate [Si{sub 8}O{sub 20}]{sup 8−} moieties in a square antiprismatic geometry. Na{sup +} and Ca{sup 2+} ions reside in the void within the framework. Raman spectra of 1, 2, and 3 were collected on single crystal samples. 1 displays more complex vibrational bands than thorite. Raman spectra of 2 and 3 are analogous with most of vibrational bands located at almost the same regions. - Graphical abstract: A Raman spectrum and crystal structures of (Ca{sub 0.5}Na{sub 0.5}){sub 2}NaAnSi{sub 8}O{sub 20} (An=Th, U), which contain pseudocubic [Si{sub 8}O{sub 20}]{sup 8−} polyanions and eight-coordinate An{sup 4+} cations. - Highlights: • Single crystal growth of three tetravalent actinide silicates from melts. • Single-crystal structures and Raman spectra of (Ca{sub 0.5}Na{sub 0.5}){sub 2}NaAnSi{sub 8}O{sub 20} (An=Th, U). • First report of Raman spectrum of huttonite on single crystal samples.

  9. Divalent Europium Doped and Un-doped Calcium Iodide Scintillators: Scintillator Characterization and Single Crystal Growth

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boatner, Lynn A; Ramey, Joanne Oxendine; Kolopus, James A; Neal, John S

    2015-01-01

    The alkaline-earth scintillator, CaI2:Eu2+, was initially discovered around 1964 by Hofstadter, Odell, and Schmidt. Serious practical problems quickly arose, however, that were associated with the growth of large monolithic single crystals of this material due to its lamellar, mica-like structure. As a result of its theoretically higher light yield, CaI2:Eu2+ has the potential to exceed the excellent scintillation performance of SrI2:Eu2+. In fact, theoretical predictions for the light yield of CaI2:Eu2+ scintillators suggested that an energy resolution approaching 2% at 662 keV could be achievable. As in the case of the early SrI2:Eu2+ scintillator, the performance of CaI2:Eu2+ scintillators hasmore » traditionally suffered due, at least in part, to outdated materials synthesis, component stoichiometry/purity, and single-crystal-growth techniques. Based on our recent work on SrI2:Eu2+ scintillators in single-crystal form, we have developed new techniques that are applied here to CaI2:Eu2+ and pure CaI2 with the goal of growing large un-cracked crystals and, potentially, realizing the theoretically predicted performance of the CaI2:Eu2+ form of this material. Calcium iodide does not adhere to modern glassy carbon Bridgman crucibles - so there should be no differential thermal-contraction-induced crystal/crucible stresses on cooling that would result in crystal cracking of the lamellar structure of CaI2. Here we apply glassy carbon crucible Bridgman growth, high-purity growth-charge compounds, our molten salt processing/filtration technique, and extended vacuum-melt-pumping methods to the growth of both CaI2:Eu2+ and un-doped CaI2. Large scintillating single crystals were obtained, and detailed characterization studies of the scintillation properties of CaI2:Eu2+ and pure CaI2 single crystals are presented that include studies of the effects of plastic deformation of the crystals on the scintillator performance.« less

  10. Performance of 3-Sun Mirror Modules on Sun Tracking Carousels on Flat Roof Buildings

    SciTech Connect (OSTI)

    Fraas, Dr. Lewis; Avery, James E.; Minkin, Leonid M; Maxey, L Curt; Gehl, Anthony C; Hurt, Rick A; Boehm, Robert F

    2008-01-01

    Commercial buildings represent a near term market for cost competitive solar electric power provided installation costs and solar photovoltaic module costs can be reduced. JX Crystals has developed a carousel sun tracker that is prefabricated and can easily be deployed on building flat roof tops without roof penetration. JX Crystals is also developing 3-sun PV mirror modules where less expensive mirrors are substituted for two-thirds of the expensive single crystal silicon solar cell surface area. Carousels each with four 3-sun modules have been set up at two sites, specifically at Oak Ridge National Lab and at the University of Nevada in Las Vegas. The test results for these systems are presented.

  11. Single crystal neutron diffraction study of the magnetic structure of TmNi{sub 2}B{sub 2}C

    SciTech Connect (OSTI)

    Sternlieb, B.; Shapiro, S.; Stassis, C.; Goldman, A.I.; Canfield, P.

    1997-02-01

    Neutron diffraction techniques have been used to study the magnetic structure of single crystals of the magnetic superconductor (T{sub c} {congruent} 11K) TmNi{sub 2}B{sub 2}C. We find that below approximately 1.5K the magnetic moments order in an incommensurate spin wave with propagation vector q{sub m} = q{sub m} (a* +b*) (or q{sub m} = q{sub m} (a* + b*)) with q{sub m} = 0.094 {+-} 0.001. The spin wave is transverse with the moments aligned along the c-axis, and the observation of relatively intense higher order harmonics shows that the modulation is not purely sinusoidal but considerably squared. This incommensurate magnetic structure, which coexists with superconductivity below T{sub N} {congruent} 1.5K, is quite different from those observed in the magnetic superconductors HoNi{sub 2}B{sub 2}C and ErNi{sub 2}B{sub 2}C. The origin of diffraction peaks observed in scans parallel to a* is briefly discussed.

  12. Millimeter size single crystals of superconducting YBa[sub 2]Cu[sub 3]O[sub x

    DOE Patents [OSTI]

    Damento, M.A.; Gschneidner, K.A. Jr.

    1989-04-25

    A method of growing large, up to 1 mm size single crystals of superconducting YBa[sub 2]Cu[sub 3]O[sub x], wherein x equals from 6.5 to 7.2 is disclosed.

  13. Millimeter size single crystals of superconducting YBa.sub.2 Cu.sub.3 O.sub .

    DOE Patents [OSTI]

    Damento, Michael A. (Ames, IA); Gschneidner, Jr., Karl A. (Ames, IA)

    1989-04-25

    A method of growing large, up to 1 mm size single crystals of superconducting YBa.sub.2 Cu.sub.3 O.sub.x, wherein x equals from 6.5 to 7.2.

  14. Shock compression modeling of metallic single crystals: comparison of finite difference, steady wave, and analytical solutions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lloyd, Jeffrey T.; Clayton, John D.; Austin, Ryan A.; McDowell, David L.

    2015-07-10

    Background: The shock response of metallic single crystals can be captured using a micro-mechanical description of the thermoelastic-viscoplastic material response; however, using a such a description within the context of traditional numerical methods may introduce a physical artifacts. Advantages and disadvantages of complex material descriptions, in particular the viscoplastic response, must be framed within approximations introduced by numerical methods. Methods: Three methods of modeling the shock response of metallic single crystals are summarized: finite difference simulations, steady wave simulations, and algebraic solutions of the Rankine-Hugoniot jump conditions. For the former two numerical techniques, a dislocation density based framework describes themore » rate- and temperature-dependent shear strength on each slip system. For the latter analytical technique, a simple (two-parameter) rate- and temperature-independent linear hardening description is necessarily invoked to enable simultaneous solution of the governing equations. For all models, the same nonlinear thermoelastic energy potential incorporating elastic constants of up to order 3 is applied. Results: Solutions are compared for plate impact of highly symmetric orientations (all three methods) and low symmetry orientations (numerical methods only) of aluminum single crystals shocked to 5 GPa (weak shock regime) and 25 GPa (overdriven regime). Conclusions: For weak shocks, results of the two numerical methods are very similar, regardless of crystallographic orientation. For strong shocks, artificial viscosity affects the finite difference solution, and effects of transverse waves for the lower symmetry orientations not captured by the steady wave method become important. The analytical solution, which can only be applied to highly symmetric orientations, provides reasonable accuracy with regards to prediction of most variables in the final shocked state but, by construction, does not provide insight into the shock structure afforded by the numerical methods.« less

  15. Calculations of single crystal elastic constants for yttria partially stabilised zirconia from powder diffraction data

    SciTech Connect (OSTI)

    Lunt, A. J. G. Xie, M. Y.; Baimpas, N.; Korsunsky, A. M.; Zhang, S. Y.; Kabra, S.; Kelleher, J.; Neo, T. K.

    2014-08-07

    Yttria Stabilised Zirconia (YSZ) is a tough, phase-transforming ceramic that finds use in a wide range of commercial applications from dental prostheses to thermal barrier coatings. Micromechanical modelling of phase transformation can deliver reliable predictions in terms of the influence of temperature and stress. However, models must rely on the accurate knowledge of single crystal elastic stiffness constants. Some techniques for elastic stiffness determination are well-established. The most popular of these involve exploiting frequency shifts and phase velocities of acoustic waves. However, the application of these techniques to YSZ can be problematic due to the micro-twinning observed in larger crystals. Here, we propose an alternative approach based on selective elastic strain sampling (e.g., by diffraction) of grain ensembles sharing certain orientation, and the prediction of the same quantities by polycrystalline modelling, for example, the Reuss or Voigt average. The inverse problem arises consisting of adjusting the single crystal stiffness matrix to match the polycrystal predictions to observations. In the present model-matching study, we sought to determine the single crystal stiffness matrix of tetragonal YSZ using the results of time-of-flight neutron diffraction obtained from an in situ compression experiment and Finite Element modelling of the deformation of polycrystalline tetragonal YSZ. The best match between the model predictions and observations was obtained for the optimized stiffness values of C11 = 451, C33 = 302, C44 = 39, C66 = 82, C12 = 240, and C13 = 50 (units: GPa). Considering the significant amount of scatter in the published literature data, our result appears reasonably consistent.

  16. Advances in the growth of alkaline-earth halide single crystals for scintillator detectors

    SciTech Connect (OSTI)

    Boatner, Lynn A; Ramey, Joanne Oxendine; Kolopus, James A; Neal, John S; Cherepy, Nerine; Payne, Stephen A.; Beck, P; Burger, Arnold; Rowe, E; Bhattacharya, P.

    2014-01-01

    Alkaline-earth scintillators such as strontium iodide and other alkaline-earth halides activated with divalent europium represent some of the most efficient and highest energy resolution scintillators for use as gamma-ray detectors in a wide range of applications. These applications include the areas of nuclear nonproliferation, homeland security, the detection of undeclared nuclear material, nuclear physics and materials science, medical diagnostics, space physics, high energy physics, and radiation monitoring systems for first responders, police, and fire/rescue personnel. Recent advances in the growth of large single crystals of these scintillator materials hold the promise of higher crystal yields and significantly lower detector production costs. In the present work, we describe new processing protocols that, when combined with our molten salt filtration methods, have led to advances in achieving a significant reduction of cracking effects during the growth of single crystals of SrI2:Eu2+. In particular, we have found that extended pumping on the molten crystal-growth charge under vacuum for time periods extending up to 48 hours is generally beneficial in compensating for variations in the alkaline-earth halide purity and stoichiometry of the materials as initially supplied by commercial sources. These melt-pumping and processing techniques are now being applied to the purification of CaI2:Eu2+ and some mixed-anion europium-doped alkaline-earth halides prior to single-crystal growth by means of the vertical Bridgman technique. The results of initial studies of the effects of aliovalent doping of SrI2:Eu2+ on the scintillation characteristics of this material are also described.

  17. The effect of interelement dipole coupling in patterned ultrathin single crystal Fe square arrays

    SciTech Connect (OSTI)

    Sun Li; Zhai Ya; Wong Pingkwanj; Zhang Wen; Xu Yongbing; Zou Xiao; Wu Jing; Luo Linqiang; Zhai Hongru

    2011-02-01

    The correlation between the magnetic properties and the interelement separation in patterned arrays of ultrathin single crystal Fe films of 12 monolayers (ML) grown on GaAs(100) has been studied. The critical condition to form single domain remanent states in the square elements was found to be 10 {mu}m in size and 20 {mu}m for the interelement separation. The coercivity was also found to increase with the increasing interelement separation in the patterned arrays. These results are attributed to the competition between the large in-plane uniaxial anisotropy, the demagnetizing field, and interelement dipole coupling as determined semiqualitatively by the ferromagnetic resonance measurements.

  18. Electronic band structure imaging of three layer twisted graphene on single crystal Cu(111)

    SciTech Connect (OSTI)

    Marquez Velasco, J.; Department of Physics, National Technical University of Athens, Athens ; Kelaidis, N.; Xenogiannopoulou, E.; Tsoutsou, D.; Tsipas, P.; Speliotis, Th.; Pilatos, G.; Likodimos, V.; Falaras, P.; Dimoulas, A.; Raptis, Y. S.

    2013-11-18

    Few layer graphene (FLG) is grown on single crystal Cu(111) by Chemical Vapor Deposition, and the electronic valence band structure is imaged by Angle-Resolved Photo-Emission Spectroscopy. It is found that graphene essentially grows polycrystalline. Three nearly ideal Dirac cones are observed along the Cu ?{sup }K{sup } direction in k-space, attributed to the presence of ?4 twisted three layer graphene with negligible interlayer coupling. The number of layers and the stacking order are compatible with Raman data analysis demonstrating the complementarity of the two techniques for a more accurate characterization of FLG.

  19. Magnetization Reversal Process of Single Crystal α-Fe Containing a Nonmagnetic Particle

    SciTech Connect (OSTI)

    Li, Yi; Xu, Ben; Hu, Shenyang Y.; Li, Yulan; Li, Qiu-Lin; Liu, Wei

    2015-09-25

    The magnetization reversal process and hysteresis loops in a single crystal α-iron with nonmagnetic particles are simulated in this work based on the Landau-Lifshitz–Gilbert equation. The evolutions of the magnetic domain morphology are studied, and our analyses show that the magnetization reversal process is affected by the interaction between the moving domain wall and the existing nonmagnetic particles. This interaction strongly depends on the size of the particles, and it is found that particles with a particular size contribute the most to magnetic hardening.

  20. Dielectric and magnetic investigations of GaFeO{sub 3} single crystals

    SciTech Connect (OSTI)

    Srimathy, B. Bhaumik, Indranil Ganesamoorthy, S. Karnal, A. K. Kumar, J.

    2014-04-24

    Structural, dielectric and magnetic properties have been investigated for the polar ferrimagnet, GaFeO{sub 3} single crystals grown by optical floating zone technique. Phase formation was confirmed from X-ray diffraction. Hopping conduction mechanism of Fe{sup 2+} ions and oxygen vacancies contribute to the electric polarization and dielectric constant of the material. Disorderness in the cation site gives rise to the magnetic ordering and the splitting in the zero field cooled (ZFC) and field cooled (FC) magnetization curves reveals the movement of the domain walls.

  1. Metal oxide superconducting powder comprised of flake-like single crystal particles

    DOE Patents [OSTI]

    Capone, Donald W.; Dusek, Joseph

    1994-01-01

    Powder of a ceramic superconducting material is synthesized such that each particle of the powder is a single crystal having a flake-like, nonsymmetric morphology such that the c-axis is aligned parallel to the short dimension of the flake. Nonflake powder is synthesized by the normal methods and is pressed into pellets or other shapes and fired for excessive times to produce a coarse grained structure. The fired products are then crushed and ground producing the flake-like powder particles which exhibit superconducting characteristics when aligned with the crystal lattice.

  2. Giant increase in critical current density of KxFe2-ySe₂ single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lei, Hechang; Petrovic, C.

    2011-12-28

    The critical current density Jabc of KxFe2-ySe₂ single crystals can be enhanced by more than one order of magnitude, up to ~2.1×10⁴ A/cm² by the post annealing and quenching technique. A scaling analysis reveals the universal behavior of the normalized pinning force as a function of the reduced field for all temperatures, indicating the presence of a single vortex pinning mechanism. The main pinning sources are three-dimensional (3D) point-like normal cores. The dominant vortex interaction with pinning centers is via spatial variations in critical temperature Tc (“δTc pinning”).

  3. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    SciTech Connect (OSTI)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides.

  4. Metal oxide superconducting powder comprised of flake-like single crystal particles

    DOE Patents [OSTI]

    Capone, D.W.; Dusek, J.

    1994-10-18

    Powder of a ceramic superconducting material is synthesized such that each particle of the powder is a single crystal having a flake-like, nonsymmetric morphology such that the c-axis is aligned parallel to the short dimension of the flake. Nonflake powder is synthesized by the normal methods and is pressed into pellets or other shapes and fired for excessive times to produce a coarse grained structure. The fired products are then crushed and ground producing the flake-like powder particles which exhibit superconducting characteristics when aligned with the crystal lattice. 3 figs.

  5. Comparative study of broadband electrodynamic properties of single-crystal and thin-film strontium titanate

    SciTech Connect (OSTI)

    Findikoglu, A. T.; Jia, Q. X.; Kwon, C.; Reagor, D. W.; Kaduchak, G.; Rasmussen, K. Oe.; Bishop, A. R.

    1999-12-27

    We have used a coplanar waveguide structure to study broadband electrodynamic properties of single-crystal and thin-film strontium titanate. We have incorporated both time- and frequency-domain measurements to determine small-signal effective refractive index and loss tangent as functions of frequency (up to 4 GHz), dc bias (up to 10{sup 6} V/m), and cryogenic temperature (17 and 60 K). The large-signal impulse response of the devices and the associated phenomenological nonlinear wave equation illustrate how dissipation and nonlinearity combine to produce the overall response in the large-signal regime. (c) 1999 American Institute of Physics.

  6. The local structure and ferromagnetism in Fe-implanted SrTiO? single crystals

    SciTech Connect (OSTI)

    Lobacheva, O. Chavarha, M.; Yiu, Y. M.; Sham, T. K.; Goncharova, L. V.

    2014-07-07

    We report a connection between the local structure of low-level Fe impurities and vacancies as the cause of ferromagnetic behavior observed in strontium titanate single crystals (STO), which were implanted with Fe and Si ions at different doses then annealed in oxygen. The effects of Fe doping and post-implantation annealing of STO were studied by X-ray Absorption Near Edge Structure (XANES) spectroscopy and Superconducting Quantum Interference Device magnetometry. XANES spectra for Fe and Ti K- and L-edge reveal the changes in the local environment of Fe and Ti following the implantation and annealing steps. The annealing in oxygen atmosphere partially healed implantation damages and changed the oxidation state of the implanted iron from metallic Fe? to Fe?/Fe? oxide. The STO single crystals were weak ferromagnets prior to implantation. The maximum saturation moment was obtained after our highest implantation dose of 210? Fe atom/cm, which could be correlated with the metallic Fe? phases in addition to the presence of O/Ti vacancies. After recrystallization annealing, the ferromagnetic response disappears. Iron oxide phases with Fe? and Fe? corresponding to this regime were identified and confirmed by calculations using Real Space Multiple Scattering program (FEFF9).

  7. Growth and characterization of new semiorganic nonlinear optical and piezoelectric lithium sulfate monohydrate oxalate single crystals

    SciTech Connect (OSTI)

    Yadav, Harsh; Sinha, Nidhi; Kumar, Binay

    2015-04-15

    Highlights: • A new semiorganic single crystal of LSO grown by slow evaporation technique. • Morphological studies of the LSO crystal deduced by BFDH law. • In the UV–vis spectrum wide transparent region and large band gap were found. • SHG is equal to KDP crystal and d{sub 33} was found to be equal to 6pC/N. • Grown crystal belongs to softer category. - Abstract: New semiorganic crystal of lithium sulfate monohydrate oxalate (LSO) for nonlinear application was synthesized by controlled slow evaporation method. The growth rate of various planes of the grown crystal was estimated by morphological study. Single crystal XRD analysis confirmed that the crystal belongs to triclinic lattice with space group P1. High transparency (∼95%) with large band gap (4.57 eV) was analyzed by UV–vis studies. FTIR and Raman spectroscopy were used to identify various functional groups present in the LSO crystal. SHG efficiency was found to be equal to the KDP crystal. Thermal stability (up to 117.54 °C) and melting point (242 °C) of the crystal were studied by TG-DTA. In dielectric measurements, the value of dielectric constant decreases with increase in frequency. Hardness studies confirmed soft nature of crystals. The piezoelectric coefficient was found to be 6pC/N along [0 0 1].

  8. Cooperative Island Growth of Large Area Single-Crystal Graphene by Chemical Vapor Deposition on Cu

    SciTech Connect (OSTI)

    Regmi, Murari [Oak Ridge National Laboratory (ORNL); Rouleau, Christopher [Oak Ridge National Laboratory (ORNL); Puretzky, Alexander A [ORNL; Ivanov, Ilia N [ORNL; Geohegan, David B [ORNL; Chen, Jihua [ORNL; Eastman, Jeffrey [Argonne National Laboratory (ANL); Eres, Gyula [ORNL

    2014-01-01

    We describe a two-step approach for suppressing nucleation of graphene on Cu using chemical vapor deposition. In the first step, as received Cu foils are oxidized in air at temperatures up to 500 C to remove surface impurities and to induce the regrowth of Cu grains during subsequent annealing in H2 flow at 1040 C prior to graphene growth. In the second step, transient reactant cooling is performed by using a brief Ar pulse at the onset of growth to induce collisional deactivation of the carbon growth species. The combination of these two steps results in a three orders of magnitude reduction in the graphene nucleation density, enabling the growth of millimeter-size single crystal graphene grains. A kinetic model shows that suppressing nucleation promotes a cooperative island growth mode that favors the formation of large area single crystal graphene, and it is accompanied by a roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random nucleation growth.

  9. Diffraction Profiles of Elasticity Bent Single Crystals with Constant Strain Gradients

    SciTech Connect (OSTI)

    Yan,H.; Kalenci, O.; Noyan, I.

    2007-01-01

    This work presents a set of equations that can be used to predict the dynamical diffraction profile from a non-transparent single crystal with a constant strain gradient examined in Bragg reflection geometry with a spherical incident X-ray beam. In agreement with previous work, the present analysis predicts two peaks: a primary diffraction peak, which would have still been observed in the absence of the strain gradient and which exits the specimen surface at the intersection point of the incident beam with the sample surface, and a secondary (mirage) peak, caused by the deflection of the wavefield within the material, which exits the specimen surface further from this intersection point. The integrated intensity of the mirage peak increases with increasing strain gradient, while its separation from the primary reflection peak decreases. The directions of the rays forming the mirage peak are parallel to those forming the primary diffraction peak. However, their spatial displacement might cause (fictitious) angular shifts in diffractometers equipped with area detectors or slit optics. The analysis results are compared with experimental data from an Si single-crystal strip bent in cantilever configuration, and the implications of the mirage peak for Laue analysis and high-precision diffraction measurements are discussed.

  10. Flux growth and magnetic properties of FeVO{sub 4} single crystals

    SciTech Connect (OSTI)

    He Zhangzhen Yamaura, Jun-Ichi; Ueda, Yutaka

    2008-09-15

    FeVO{sub 4} (I) single crystals are grown by the flux method using V{sub 2}O{sub 5} as the self-flux. The grown crystals exhibit a characteristic morphology with natural facets. The quality of the crystals is confirmed by X-ray diffraction and EPMA techniques. Magnetic properties are investigated by means of magnetic susceptibility, magnetization, and heat capacity measurements. Two magnetic phase transitions are observed at {approx}13 and {approx}20 K. Such unusual magnetic behaviors are suggested to originate from two different Fe ligand environments of octahedral FeO{sub 6} and trigonal bipyramidal FeO{sub 5} in a six-column doubly bent chain. - Graphical abstract: FeVO{sub 4} (I) single crystals are grown by the flux method using V{sub 2}O{sub 5} as the self-flux. Magnetic properties are investigated by means of magnetic susceptibility, magnetization, and heat capacity measurements, showing two magnetic phase transitions at {approx}13 and {approx}20 K.

  11. In-Situ Measurement of Crystalline Silicon Modules Undergoing Potential-Induced Degradation in Damp Heat Stress Testing for Estimation of Low-Light Power Performance

    SciTech Connect (OSTI)

    Hacke, P.; Terwilliger, K.; Kurtz, S.

    2013-08-01

    The extent of potential-induced degradation of crystalline silicon modules in an environmental chamber is estimated using in-situ dark I-V measurements and applying superposition analysis. The dark I-V curves are shown to correctly give the module power performance at 200, 600 and 1,000 W/m2 irradiance conditions, as verified with a solar simulator. The onset of degradation measured in low light in relation to that under one sun irradiance can be clearly seen in the module design examined; the time to 5% relative degradation measured in low light (200 W/m2) was 28% less than that of full sun (1,000 W/m2 irradiance). The power of modules undergoing potential-induced degradation can therefore be characterized in the chamber, facilitating statistical analyses and lifetime forecasting.

  12. Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

    DOE Patents [OSTI]

    Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

    1991-01-01

    A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

  13. Modules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    it's recommended to use the full version number, i.e. instead of doing "module load python" do "module load python2.7.6". This will preserve a record of the software version...

  14. Fabrication of Fe nanowires on yittrium-stabilized zirconia single crystal substrates by thermal CVD methods

    SciTech Connect (OSTI)

    Kawahito, A.; Yanase, T.; Endo, T.; Nagahama, T.; Shimada, T.

    2015-05-07

    Magnetic nanowires (NWs) are promising as material for use in spintronics and as the precursor of permanent magnets because they have unique properties due to their high aspect ratio. The growth of magnetic Fe whiskers was reported in the 1960s, but the diameter was not on a nanoscale level and the growth mechanism was not fully elucidated. In the present paper, we report the almost vertical growth of Fe NWs on a single crystal yttrium-stabilized zirconia (Y{sub 0.15}Zr{sub 0.85}O{sub 2}) by a thermal CVD method. The NWs show a characteristic taper part on the bottom growing from a trigonal pyramidal nucleus. The taper angle and length can be controlled by changing the growth condition in two steps, which will lead to obtaining uniformly distributed thin Fe NWs for applications.

  15. Single shot ultrafast dynamic ellipsometry (UDE) of laser-driven shocks in single crystal explosives

    SciTech Connect (OSTI)

    Whitley, Von H; Mcgrane, Shawn D; Moore, David S; Eakins, Dan E; Bolme, Cindy A

    2009-01-01

    We report on the first experiments to measure states in shocked energetic single crystals with dynamic ellipsometry. We demonstrate that these ellipsometric techniques can produce reasonable Hugoniot values using small amounts of crystalline RDX and PETN. Pressures, particle velocities and shock velocities obtained using shocked ellipsometry are comparable to those found using gas-gun flyer plates and molecular dynamics calculations. The adaptation of the technique from uniform thin films of polymers to thick non-perfect crystalline materials was a significant achievement. Correct sample preparation proved to be a crucial component. Through trial and error, we were able to resolve polishing issues, sample quality problems, birefringence effects and mounting difficulties that were not encountered using thin polymer films.

  16. Anisotropic shock sensitivity and detonation temperature of pentaerythritol tetranitrate single crystal

    SciTech Connect (OSTI)

    Yoo, C. S.; Holmes, N. C.; Souers, P. C.; Wu, C. J.; Ree, F. H.; Dick, J. J.

    2000-07-01

    Shock temperatures of pentaerythritol tetranitrate (PETN) single crystals have been measured by using a nanosecond time-resolved spectropyrometric system operated at six discrete wavelengths between 350 and 700 nm. The results show that the shock sensitivity of PETN is strongly dependent on the crystal orientation: Sensitive along the shock propagation normal to the (110) plane, but highly insensitive normal to the (100) plane. The detonation temperature of PETN is, however, independent from the crystal orientation and is determined to be 4140 ({+-}70) K. The time-resolved data yielding the detonation velocity 8.28 ({+-}0.10) mm/{mu}s can be interpreted in the context of a modified thermal explosion model. (c) 2000 American Institute of Physics.

  17. Effect of nitrogen on the growth of boron doped single crystal diamond

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Karna, Sunil; Vohra, Yogesh

    2013-11-18

    Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profilemore » of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.« less

  18. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Harris Kagan; K.K. Gan; Richard Kass

    2009-03-31

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2013, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  19. Optical properties of Eu{sup 2+} doped antipervoskite fluoride single crystals

    SciTech Connect (OSTI)

    Daniel, D. Joseph; Ramasamy, P.; Nithya, R.; Madhusoodanan, U.

    2013-02-05

    Single crystals of pure and Eu{sup 2+} doped LiBaF{sub 3} have been grown from melt by using a vertical Bridgman-Stockbarger method. Absorption and luminescence spectra for pure and rare-earth-doped LiBaF{sub 3} were studied. At ambient conditions the photoluminescence spectra consisted of sharp lines peaked at {approx}359 nm attributed to the {sup 6}P7/2{yields}{sup 8}S7/2 transitions in the 4f{sub 7} electronic configuration of Eu{sup 2+} and a broad band extending between 370 and 450 nm attributed to Eu{sup 2+} trapped exciton recombination. The effect of {sup 60}Co gamma irradiation has also been investigated.

  20. XRD micro-XANES EMPA and SIMS investigation on phlogopite single crystals from Mt. Vulture (Italy)

    SciTech Connect (OSTI)

    F Scordari; M Dyar; E Schingaro; M Lacalamita; L Ottolini

    2011-12-31

    Selected phlogopite flakes from Mt. Vulture in southern Italy were studied using a combination of single-crystal techniques: electron microprobe analysis (EMPA), secondary ion mass spectrometry (SIMS), single-crystal X-ray diffraction (SCXRD), and micro-X-ray absorption near-edge spectroscopy (XANES). The latter technique was employed to analyze the structure of the Fe-K absorption edge over the region from 7080-8100 eV and to determine Fe{sup 3+}/{Sigma}Fe at a micrometer scale, albeit with large error bars due to known effects of orientation on pre-edge energy. The annite component, Fe/(Mg+Fe), of the samples studied ranged from 0.16 to 0.31, the Ti content from 0.11 to 0.27 atoms per formula unit (apfu) and the Ba content from 0.03 to 0.09 apfu. SIMS analysis showed H{sub 2}O (wt%) = 1.81-3.30, F (wt%) = 0.44-1.29, and Li{sub 2}O (wt%) = 0.001-0.027. The intra single-crystal chemical variability for major/minor elements (Mg, Fe, Al, Ba, Ti, and K) was found particularly significant for samples VUT191{_}11 and PG5{_}1, less significant for the other samples of the set. SIMS data relative to crystals VUT187{_}24, VUT191{_}10, VUT191{_}11, and VUT187{_}28 showed a noteworthy variation in the concentrations of some light elements (H, Li, and F) with coefficient of variation CV (as 1{sigma}%) up to {approx}18% for H{sub 2}O. The analyzed micas belong to the 1M polytype. Structure refinements using anisotropic displacement parameters were performed in space group C2/m and converged at 3.08 {<=} R {<=} 3.63, 3.32 {<=} R{sub w} {<=} 3.98%. Micro-XANES results yielded Fe{sup 3+}/{Sigma}Fe from 51-93%. Previous Moessbauer data from powdered samples suggested Fe{sup 3+}/{Sigma}Fe values ranging from 49-87%. However, the Fe{sup 3+} content determined by both techniques is sometimes remarkably different, in part because of the large errors ({+-}10-15%) presently associated with the micro-XANES technique and in part because the Fe{sup 3+} content of a single crystal may significantly depart from the average value obtained from routine Moessbauer analysis. The combination of EMPA, SIMS, and micro-XANES resulted in the characterization of the samples at a comparable spatial scale. By means of in-situ data and the results of crystallographic investigations, the occurrence of different relative amounts of M{sup 3+}-oxy [{sup VI}M{sup 2+} + (OH){sup -} {leftrightarrow} {sup VI}M{sup 3+} + O{sup 2-} + {1/2}H{sub 2}{up_arrow}], Ti-oxy substitutions [{sup VI}M{sup 2+} + 2(OH){sup -} {leftrightarrow} {sup VI}Ti{sup 4+} + 2O{sup 2-} + H{sub 2}{up_arrow}], and Ti-vacancy ({open_square}) substitution (2{sup VI}M{sup 2+} {leftrightarrow} {sup VI}Ti{sup 4+} + {sup VI}{open_square}) was ascertained for the studied samples.

  1. Summary Report of Summer Work: High Purity Single Crystal Growth & Microstructure of Ferritic-Martensitic Steels

    SciTech Connect (OSTI)

    Pestovich, Kimberly Shay

    2015-08-18

    Harnessing the power of the nuclear sciences for national security and to benefit others is one of Los Alamos National Laboratory’s missions. MST-8 focuses on manipulating and studying how the structure, processing, properties, and performance of materials interact at the atomic level under nuclear conditions. Within this group, single crystal scintillators contribute to the safety and reliability of weapons, provide global security safeguards, and build on scientific principles that carry over to medical fields for cancer detection. Improved cladding materials made of ferritic-martensitic alloys support the mission of DOE-NE’s Fuel Cycle Research and Development program to close the nuclear fuel cycle, aiming to solve nuclear waste management challenges and thereby increase the performance and safety of current and future reactors.

  2. Single-crystal diamond refractive lens for focusing X-rays in two dimensions

    SciTech Connect (OSTI)

    Antipov, S.; Baryshev, Sergey; Butler, J. E.; Antipova, O.; Liu, Zunping; Stoupin, S.

    2016-01-01

    The fabrication and performance evaluation of single-crystal diamond refractive X-ray lenses of which the surfaces are paraboloids of revolution for focusing X-rays in two dimensions simultaneously are reported. The lenses were manufactured using a femtosecond laser micromachining process and tested using X-ray synchrotron radiation. Such lenses were stacked together to form a standard compound refractive lens (CRL). Owing to the superior physical properties of the material, diamond CRLs could become indispensable wavefront-preserving primary focusing optics for X-ray free-electron lasers and the next-generation synchrotron storage rings. They can be used for highly efficient refocusing of the extremely bright X-ray sources for secondary optical schemes with limited aperture such as nanofocusing Fresnel zone plates and multilayer Laue lenses.

  3. Nanosecond pump and probe observation of bimolecular exciton effects in rubrene single crystals

    SciTech Connect (OSTI)

    Ward, Kebra A.; Richman, Brittany R.; Biaggio, Ivan

    2015-06-01

    Transient grating pump and probe experiments are used to investigate excitonic processes on the nanosecond time scale in rubrene single crystals. We find that bimolecular interactions cause a photoinduced excited state density on the order of 0.5 × 10{sup 20 }cm{sup −3}—corresponding to an average distance of ∼3 nm between individual states—to decrease by a factor of 2 after 2 ns, following a typical power-law decay. We assign the observed power-law decays to high-density interactions between excited states. Because of the high efficiency singlet exciton fission observed in rubrene, these bimolecular interactions are likely those between triplet excitons or between coherent quantum superpositions of a singlet and a pair of triplet-excitons.

  4. Single crystal growth and characterization of the large-unit-cell compound Cu13Ba

    SciTech Connect (OSTI)

    Jesche, Anton; Budko, Serguei L.; Canfield, Paul C.

    2013-10-31

    Single crystals of Cu13Ba were successfully grown out of BaCu self flux. Temperature dependent magnetization, M (T ), electrical resistivity, ?(T)?(T), and specific heat, Cp(T)Cp(T), data are reported. Isothermal magnetization measurements, M(H)M(H), show clear de Haas-van Alphen oscillations at T = 2 K for applied fields as low as View the MathML source?0H=1T. An anomalous behavior of the magnetic susceptibility is observed up to T ? 50 K reflecting the effect of de Haas-van Alphen oscillations at fairly high temperatures. The field- and temperature-dependencies of the magnetization indicate the presence of diluted magnetic impurities with a concentration of the order of 0.01 at.%. Accordingly, the minimum and lower temperature rise observed in the electrical resistivity at and below T = 15 K is attributed to the Kondo-impurity effect.

  5. Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Asadchikov, Victor E.; Butashin, Andrey V.; Buzmakov, Alexey V.; Deryabin, Alexander N.; Kanevsky, Vladimir M.; Prokhorov, Igor A.; Roshchin, Boris S.; Volkov, Yuri O.; Zolotov, Dennis A.; Jafari, Atefeh; et al

    2016-03-22

    We report on the growth and characterization of several sapphire single crystals for the purpose of x-ray optics applications. Structural defects were studied by means of laboratory double-crystal X-ray diffractometry and white beam synchrotron-radiation topography. The investigations confirmed that the main defect types are dislocations. The best quality crystal was grown using the Kyropoulos technique with a dislocation density of 102-103 cm-2 and a small area with approximately 2*2 mm2 did not show dislocation contrast in many reflections and has suitable quality for application as a backscattering monochromator. As a result, a clear correlation between growth rate and dislocation densitymore » is observed, though growth rate is not the only parameter impacting the quality.« less

  6. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Rainer Wallny

    2012-10-15

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2010, and the LHC upgrades expected in 2015, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed and operational in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  7. Photo-transport properties of Pb{sub 2}CrO{sub 5} single crystals

    SciTech Connect (OSTI)

    Mondal, P. S.; Okazaki, R. Taniguchi, H.; Terasaki, I.

    2014-11-21

    We report photo-thermoelectric transport phenomena in Pb{sub 2}CrO{sub 5} single crystals. Without illumination, this material exhibits an insulating behavior characterized by an activation-type temperature variation of the electrical conductivity. The Seebeck coefficient contrastingly shows a crossover from high-temperature insulating to low-temperature metallic behavior, which is attributed to degenerate carriers in a donor level. We have found that under illumination, both the conductivity and the Seebeck coefficient increase in magnitude with increasing photon flux density in the degenerate-conduction regime. This result is difficult to understand within a simple photo-doping effect, which usually leads to a decrease in the Seebeck coefficient under illumination. The observed phenomenon is discussed in terms of a two-carrier contribution to the transport properties.

  8. Detailed Surface Analysis Of Incremental Centrifugal Barrel Polishing (CBP) Of Single-Crystal Niobium Samples

    SciTech Connect (OSTI)

    Palczewski, Ari D.; Hui Tian; Trofimova, Olga; Reece, Charles E.

    2011-07-01

    We performed Centrifugal Barrel Polishing (CBP) on single crystal niobium samples/coupons housed in a stainless steel sample holder following the polishing recipe developed at Fermi Lab (FNAL) in 2011 \\cite{C. A. Cooper 2011}. Post CBP, the sample coupons were analyzed for surface roughness, crystal composition and structure, and particle contamination. Following the initial analysis each coupon was high pressure rinsed (HRP) and analyzed for the effectiveness of contamination removal. We were able to obtain the mirror like surface finish after the final stage of tumbling, although some defects and embedded particles remained. In addition, standard HPR appears to have little effect on removing embedded particles which remain after each tumbling step, although final polishing media removal was partially affected by standard/extended HPR.

  9. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect (OSTI)

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  10. A study of the structure and scattering mechanisms of subterahertz phonons in lithium fluoride single crystals and optical ceramics

    SciTech Connect (OSTI)

    Khazanov, E. N. Taranov, A. V.; Gainutdinov, R. V.; Akchurin, M. Sh.; Basiev, T. T.; Konyushkin, V. A.; Fedorov, P. P.; Kuznetsov, S. V.; Osiko, V. V.

    2010-06-15

    The methods of optical, electron, and atomic force microscopy (AFM) are applied to the study of the real structure of optical lithium fluoride ceramic obtained by hot deformation of single crystals. A comparative analysis is carried out of the scattering mechanisms of weakly nonequilibrium thermal phonons at liquid helium temperatures in LiF single crystals and ceramics. It is demonstrated that the phonon scattering in the original single crystals is determined by the forced vibrations of dislocations in the stress field of an elastic plane wave (a phonon), i.e., by the flutter mechanism. As the degree of deformation of the original material increases, the ceramics exhibit a change in the plastic deformation mechanisms, which leads to a decrease in the average size of grains and to an ordered structure. In this case, the dominant scattering is that by intergrain boundaries. The thickness and the acoustic impedance of these boundaries are evaluated.

  11. Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magnetic shape memory effect

    SciTech Connect (OSTI)

    Heczko, O. Drahokoupil, J.; Straka, L.

    2015-05-07

    Enhanced magnetic hysteresis due to boron doping in combination with magnetic shape memory effect in Ni-Mn-Ga single crystal results in new interesting functionality of magnetic shape memory (MSM) alloys such as mechanical demagnetization. In Ni{sub 50.0}Mn{sub 28.5}Ga{sub 21.5} single crystal, the boron doping increased magnetic coercivity from few Oe to 270?Oe while not affecting the transformation behavior and 10?M martensite structure. However, the magnetic field needed for MSM effect also increased in doped sample. The magnetic behavior is compared to undoped single crystal of similar composition. The evidence from the X-ray diffraction, magnetic domain structure, magnetization loops, and temperature evolution of the magnetic coercivity points out that the enhanced hysteresis is caused by stress-induced anisotropy.

  12. Transistors using crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    1995-01-01

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

  13. A tale of two mechanisms. Strain-softening versus strain-hardening in single crystals under small stressed volumes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bei, Hongbin; Xia, Yuzhi; Barabash, Rozaliya; Gao, Y. F.

    2015-08-10

    Pre-straining defect-free single crystals will introduce heterogeneous dislocation nucleation sources that reduce the measured strength from the theoretical value, while pre-straining bulk samples will lead to strain hardening. Their competition is investigated by nanoindentation pop-in tests on variously pre-strained Mo single crystals with several indenter radii (~micrometer). Pre-straining primarily shifts deformation mechanism from homogeneous dislocation nucleation to a stochastic behavior, while strain hardening plays a secondary role, as summarized in a master plot of pop-in strength versus normalized indenter radius.

  14. NMR Search for the Spin Nematic State in a LaFeAsO Single Crystal (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect NMR Search for the Spin Nematic State in a LaFeAsO Single Crystal Citation Details In-Document Search Title: NMR Search for the Spin Nematic State in a LaFeAsO Single Crystal Authors: Fu, M. ; Torchetti, D. A. ; Imai, T. ; Ning, F. L. ; Yan, J.-Q. ; Sefat, A. S. Publication Date: 2012-12-10 OSTI Identifier: 1102497 Type: Publisher's Accepted Manuscript Journal Name: Physical Review Letters Additional Journal Information: Journal Volume: 109; Journal Issue: 24;

  15. Development of large-area monolithically integrated silicon-film{trademark} photovoltaic modules. Final subcontract report, May 1, 1991--December 31, 1994

    SciTech Connect (OSTI)

    Hall, R.B.; Rand, J.A.; Cotter, J.E.

    1995-04-01

    The objective of this program is to develop Silicon Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (<100 {mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achieved by the use of light trapping and passivated surfaces. This project focused on the development of five key technologies associated with the monolithic sub-module device structure: (1) development of the film deposition and growth processes; (2) development of the low-cost ceramic substrate; (3) development of a metallurgical barrier technology; (4) development of sub-element solar cell processing techniques; and (5) development of sub-module (isolation and interconnection) processes. This report covers the development approaches and results relating to these technologies. Significant progress has been made in the development of all of the related technologies. This is evidenced by the fabrication of a working 12.0 cm{sup 2} prototype sub-module consisting of 7 elements and testing with an open circuit voltage of 3.9 volts, a short circuit current of 35.2 mA and a fill factor of 63% and an overall efficiency of 7.3%. Another significant result achieved is a 13.4% (NREL verified), 1.0 cm{sup 2} solar cell fabricated from material deposited and grown on a graphite cloth substrate. The significant technological hurdle of the program was and remains the low quality of the photovoltaic layer which is caused by contamination of the photovoltaic layer from the low-cost ceramic substrate by trace impurities found in the substrate precursor materials. The ceramic substrate and metallurgical barrier are being developed specifically to solve this problem.

  16. Color tuning of light-emitting-diodes by modulating the concentration of red-emitting silicon nanocrystal phosphors

    SciTech Connect (OSTI)

    Barillaro, G. Strambini, L. M.

    2014-03-03

    Luminescent forms of nanostructured silicon have received significant attention in the context of quantum-confined light-emitting devices thanks to size-tunable emission wavelength and high-intensity photoluminescence, as well as natural abundance, low cost, and non-toxicity. Here, we show that red-emitting silicon nanocrystal (SiN) phosphors, obtained by electrochemical erosion of silicon, allow for effectively tuning the color of commercial light-emitting-diodes (LEDs) from blue to violet, magenta, and red, by coating the LED with polydimethylsiloxane encapsulating different SiN concentrations. High reliability of the tuning process, with respect to SiN fabrication and concentration, and excellent stability of the tuning color, with respect to LED bias current, is demonstrated through simultaneous electrical/optical characterization of SiN-modified commercial LEDs, thus envisaging exciting perspectives for silicon nanocrystals in the field of light-emitting applications.

  17. Effect of dislocation trapping on deuterium diffusion in deformed, single-crystal Pd

    SciTech Connect (OSTI)

    Heuser, B.J.; King, J.S.

    1998-06-01

    Small-angle neutron scattering (SANS) has been used to characterize deuterium trapping at dislocations in deformed, single-crystal Pd during in situ gas evolution experiments. Two methods of deformation were employed--cold rolling and hydride cycling--which create different dislocation arrangements or substructures in Pd. The reduction of the trapped deuterium concentration at dislocations during evolution was directly monitored with SANS. Exponential decay rates of the trapped concentration were observed for both sample types, as is expected in a bulk diffusion process modified by the dislocation trapping interaction. The deuterium concentration reduction proceeded 1.2 to 1.4 times faster in the cold-rolled sample material than in the cycled material. This is attributed to the presence of a smaller number of dislocation trapping sites in the cold-rolled material. The binding energy of deuterium at dislocations was determined by applying a diffusion-based model. A binding energy of 0.20 eV was found to characterize the trapping interaction in both cold-rolled and hydride-cycled Pd.

  18. Elastic properties of Pd-hydrogen, Pd-deuterium, and Pd-tritium single crystals

    SciTech Connect (OSTI)

    Schwarz, R.B. . E-mail: rxzs@lanl.gov; Bach, H.T.; Harms, U.; Tuggle, D.

    2005-02-01

    We used a resonant-ultrasound-spectroscopy technique to measure the three independent elastic constants of PdH{sub x}, PdD{sub x}, and PdT{sub x} single crystals at 300 K. For 0.1x0.62 our PdH{sub x} crystals are two-phase mixtures of coherent {alpha} and {beta} hydride phases. For increasing x in this range, C{sub 44} decreases monotonically whereas C'=12(C11-C12) has a concave parabolic dependence. This difference is because C' is softened by an anelastic relaxation resulting from acoustic-stress-induced changes in the shape of the coherent lenticular-shape precipitates ({beta}-hydride precipitates in {alpha}-hydride matrix and {alpha}-hydride precipitates in {beta}-hydride matrix). In the {beta}-phase C' and C{sub 44} decrease with increasing hydrogen (or deuterium or tritium) content. Furthermore, C' exhibits a strong isotope effect whereas C{sub 44} does not. This effect is attributed to differences in the excitation of optical phonons in Pd-H, Pd-D and Pd-T.

  19. Creep of CMSX-4 superalloy single crystals: Effects of rafting at high temperature

    SciTech Connect (OSTI)

    Reed, R.C.; Matan, N.; Cox, D.C.; Rist, M.A.; Rae, C.M.F.

    1999-09-29

    The creep performance of (001)-orientated CMSX-4 superalloy single crystals at temperatures beyond 1000 C is analyzed. Rafting of the {gamma}{prime} structure occurs rapidly, e.g., for the 1150 C/100 MPa tests rafting is completed within the first 10 h. At this stage and for a considerable time thereafter the creep strain rate decreases with increasing strain, implying a creep hardening effect which is absent at lower temperatures when the kinetics of rafting is less rapid. Once a critical strain {epsilon}* of (0.7 {+-} 0.3)% is reached, the creep strain increases dramatically and failure occurs within a few tens of hours. It is demonstrated that methods of interpretation which, assume a proportionality between the creep strain rate and creep strain, are unable to account for creep hardening which occurs as a consequence of rafting. A modification is proposed which accounts for the blocking of the glide/climb of {l{underscore}brace}111{r{underscore}brace}{l{underscore}angle}1{bar 1}0{r{underscore}angle} creep dislocations which occurs as the number of vertical {gamma} channels is reduced and cellular dislocation networks become stabilized. Consequently, failure must be taken to be associated with creep cavitation, which occurs predominantly around casting porosity. It is emphasized that more work is required to quantify the interaction between the various creep damage mechanisms.

  20. Anisotropic small-polaron hopping in W:BiVO{sub 4} single crystals

    SciTech Connect (OSTI)

    Rettie, Alexander J. E.; Chemelewski, William D.; Zhou, Jianshi; Lindemuth, Jeffrey; McCloy, John S.; Marshall, Luke G.; Emin, David; Mullins, C. Buddie

    2015-01-12

    DC electrical conductivity, Seebeck and Hall coefficients are measured between 300 and 450 K on single crystals of monoclinic bismuth vanadate that are doped n-type with 0.3% tungsten donors (W:BiVO{sub 4}). Strongly activated small-polaron hopping is implied by the activation energies of the Arrhenius conductivities (about 300 meV) greatly exceeding the energies characterizing the falls of the Seebeck coefficients' magnitudes with increasing temperature (about 50 meV). Small-polaron hopping is further evidenced by the measured Hall mobility in the ab-plane (10{sup −1 }cm{sup 2 }V{sup −1 }s{sup −1} at 300 K) being larger and much less strongly activated than the deduced drift mobility (about 5 × 10{sup −5 }cm{sup 2 }V{sup −1 }s{sup −1} at 300 K). The conductivity and n-type Seebeck coefficient is found to be anisotropic with the conductivity larger and the Seebeck coefficient's magnitude smaller and less temperature dependent for motion within the ab-plane than that in the c-direction. These anisotropies are addressed by considering highly anisotropic next-nearest-neighbor (≈5 Å) transfers in addition to the somewhat shorter (≈4 Å), nearly isotropic nearest-neighbor transfers.

  1. Terahertz probes of magnetic field induced spin reorientation in YFeO{sub 3} single crystal

    SciTech Connect (OSTI)

    Lin, Xian; Jiang, Junjie; Ma, Guohong; Jin, Zuanming; Wang, Dongyang; Tian, Zhen; Han, Jiaguang; Cheng, Zhenxiang

    2015-03-02

    Using the terahertz time-domain spectroscopy, we demonstrate the spin reorientation of a canted antiferromagnetic YFeO{sub 3} single crystal, by evaluating the temperature and magnetic field dependence of resonant frequency and amplitude for the quasi-ferromagnetic (FM) and quasi-antiferromagnetic modes (AFM), a deeper insight into the dynamics of spin reorientation in rare-earth orthoferrites is established. Due to the absence of 4f-electrons in Y ion, the spin reorientation of Fe sublattices can only be induced by the applied magnetic field, rather than temperature. In agreement with the theoretical predication, the frequency of FM mode decreases with magnetic field. In addition, an obvious step of spin reorientation phase transition occurs with a relatively large applied magnetic field of 4?T. By comparison with the family members of RFeO{sub 3} (R?=?Y{sup 3+} or rare-earth ions), our results suggest that the chosen of R would tailor the dynamical rotation properties of Fe ions, leading to the designable spin switching in the orthoferrite antiferromagnetic systems.

  2. Superconductivity and Physical Properties of CaPd2Ge2 Single Crystals

    SciTech Connect (OSTI)

    Anand, V K; Kim, Hyunsoo; Tanatar, Makariy A; Prozorov, Ruslan; Johnston, David C

    2014-10-08

    We present the superconducting and normal state properties of CaPd2Ge2 single crystals investigated by magnetic susceptibility ?, isothermal magnetization M, heat capacity Cp, in-plane electrical resistivity ? and London penetration depth ? versus temperature T and magnetic field H measurements. Bulk superconductivity is inferred from the ?(T) and Cp(T) data. The ?(T) data exhibit metallic behavior and a superconducting transition with Tc onset = 1.98 K and zero resistivity at Tc 0 = 1.67 K. The ?(T) reveals the onset of superconductivity at 2.0 K. For T > 2.0 K, the ?(T) and M(H) are weakly anisotropic paramagnetic with ?ab > ?c. The Cp(T) data confirm the bulk superconductivity below Tc = 1.69(3) K. The superconducting state electronic heat capacity is analyzed within the framework of a single-band ?-model of BCS superconductivity and various normal and superconducting state parameters are estimated. Within the ?-model, the Cp(T) data and the ab plane ?(T) data consistently indicate a moderately anisotropic s-wave gap with ?(0)/kBTc ? 1.6, somewhat smaller than the BCS value of 1.764. The relationship of the heat capacity jump at Tc and the penetration depth measurement to the anisotropy in the s-wave gap is discussed.

  3. Evaluation of scuffing behavior of single-crystal zirconia ceramic materials.

    SciTech Connect (OSTI)

    Lorenzo-Martin, C.; Ajayi, O. O.; Singh, D.; Routbort, J. L.; Energy Systems

    2007-09-10

    Scuffing, described as sudden catastrophic failure of lubricated sliding surfaces, is usually characterized by a sudden rapid increase in friction, temperature, and noise, and is an important failure mode on sliding surfaces. In metallic materials, scuffing results in severe plastic deformation of surfaces in contact. This study evaluated the scuffing behavior of two variants of zirconia (ZrO{sub 2}) ceramic. Using a block-on-ring contact configuration and unformulated polyalphaolefin (PAO) lubricant, step-load-increase scuffing tests were conducted with single crystals of cubic ZrO{sub 2}-9.5% Y{sub 2}O{sub 3} and tetragonal ZrO{sub 2}-3% Y{sub 2}O{sub 3}. Phenomenological 'scuffing', characterized by a sudden rise in friction coefficient and noise, was observed in the cubic material. For this material, 'scuffing' occurred by sudden fracture at the end of test. The tetragonal material underwent no sudden failure (scuffing). This lack of scuffing is attributed to the sequential operation of three plastic deformation mechanisms: ferroelastic domain switching, tetragonal-to-monoclinic phase transformation, and dislocation slip as the frictional stress and energy dissipation pathway.

  4. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Kagan, Harris; Kass, Richard; Gan, K.K.

    2014-01-23

    With the LHC upgrades in 2013, and further LHC upgrades scheduled in 2018, most LHC experiments are planning for detector upgrades which require more radiation hard technologies than presently available. At present all LHC experiments now have some form of diamond detector. As a result Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of all LHC experiments. Moreover CVD diamond is now being discussed as an alternative sensor material for tracking very close to the interaction region of the HL-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications. Our accomplishments include: Developed a two U.S.companies to produce electronic grade diamond, Worked with companies and acquired large area diamond pieces, Performed radiation hardness tests using various proton energies: 70 MeV (Cyric, Japan), 800 MeV (Los Alamos), and 24 GeV (CERN).

  5. Oxidation of methanol on single crystal platinum electrodes in alkaline solution

    SciTech Connect (OSTI)

    Tripkovic, A.V.; Marinkovic, N.; Adzic, R.R.

    1995-10-01

    Methanol oxidation has been studied on three low-index single crystal Pt electrodes and four stepped surfaces, vicinal to the (111) and (100) orientations in alkaline solutions. Considering the onset of the reaction, it appears that the activity decreases in the sequence Pt(100), Pt(110) and Pt(111). This can also be inferred from the quasi-steady-state measurements. The current peaks, observed at different potentials, show the highest activity of Pt(111). The steps cause increase of the surface activity, but are prone to a fast poisoning. The reaction involves a formation of a small amount of CO on Pt(100) but a negligible amount on Pt(111). This was inferred from the in situ FTIR measurements. Two different reaction mechanisms were identified for the Pt(111) and Pt(100). The data clearly show that a large difference of the activity of Pt for methanol oxidation in acid and alkaline solutions originates in a smaller or negligible poisoning effects in alkaline solutions.

  6. Elastic-plastic and phase transition of zinc oxide single crystal under shock compression

    SciTech Connect (OSTI)

    Liu, Xun; Mashimo, Tsutomu Li, Wei; Zhou, Xianming; Sekine, Toshimori

    2015-03-07

    The Hugoniot data for zinc oxide (ZnO) single crystals were measured up to 80 GPa along both the 〈112{sup ¯}0〉 (a-axis) and 〈0001〉 (c-axis) directions using a velocity interferometer system for any reflector and inclined-mirror method combined with a powder gun and two-stage light gas gun. The Hugoniot-elastic limits of ZnO were determined to be 10.5 and 11.5 GPa along the a- and c-axes, respectively. The wurtzite (B4) to rocksalt (B1) phase transition pressures along the a- and c-axes are 12.3 and 14.4 GPa, respectively. Shock velocity (U{sub s}) versus particle velocity (U{sub p}) relation of the final phase is given by the following relationship: U{sub s} (km/s) = 2.76 + 1.51U{sub p} (km/s). Based on the Debye-Grüneisen model and Birch-Murnaghan equation of state (EOS), we discuss the EOS of the B1 phase ZnO. The bulk modulus (K{sub 0}) and its pressure derivative (K{sub 0}′) are estimated to be K{sub 0} = 174 GPa and K{sub 0}′ = 3.9, respectively.

  7. Kelvin probe characterization of buried graphitic microchannels in single-crystal diamond

    SciTech Connect (OSTI)

    Bernardi, E. Battiato, A.; Olivero, P.; Vittone, E.; Picollo, F.

    2015-01-14

    In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of buried graphitic microchannels fabricated in single-crystal diamond by direct MeV ion microbeam writing. Metal deposition of variable-thickness masks was adopted to implant channels with emerging endpoints and high temperature annealing was performed in order to induce the graphitization of the highly-damaged buried region. When an electrical current was flowing through the biased buried channel, the structure was clearly evidenced by KPM maps of the electrical potential of the surface region overlying the channel at increasing distances from the grounded electrode. The KPM profiling shows regions of opposite contrast located at different distances from the endpoints of the channel. This effect is attributed to the different electrical conduction properties of the surface and of the buried graphitic layer. The model adopted to interpret these KPM maps and profiles proved to be suitable for the electronic characterization of buried conductive channels, providing a non-invasive method to measure the local resistivity with a micrometer resolution. The results demonstrate the potential of the technique as a powerful diagnostic tool to monitor the functionality of all-carbon graphite/diamond devices to be fabricated by MeV ion beam lithography.

  8. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  9. One-dimensional SANS employing bent-single crystal optics: Theory and demonstration

    SciTech Connect (OSTI)

    Heuser, B.J.; Popovici, M.; Berliner, R.

    1995-12-31

    A recent small-angle neutron scattering (SANS) instrumentation development at the University of Missouri Research Reactor Center (MURR) using bent, double Si crystal diffraction is presented. Neutron rocking curves of flat single crystals are only a few seconds of arc with correspondingly low integrated intensities. The rocking curve can be significantly broadened if the crystals are bent. However, the phase-space acceptance and emergence windows of two bent crystals in parallel can be matched only if the reflecting planes have different d-spacing. The authors have used a combination of the Si(111) and (220) reflections in the work presented here. The peak intensity of the rocking curve with this configuration was approximately 2.5 {times} 10{sup 5} neutrons per second over a 5 cm{sup 2} area of sample at 1.5 {angstrom}. The rocking curve wings fell sharply (approximately as Q{sup {minus}11}), permitting accurate scattered intensity measurements down to a minimum Q value of 0.005 1/{angstrom} at a Q resolution of 0.003 1/{angstrom}. The technique also offers the possibility of variable resolution without too much difficulty; changes up to a factor of 2 can be made by adjusting the sample-to-analyzer crystal distance, while changes of a factor of 10 can be made by using different Si reflections. Since the incident neutron wavelength can be tuned to the peak of the leakage spectrum, this technique is ideal for low-flux reactors, which otherwise cannot be used for SANS research. The usefulness of one-dimensional SANS is demonstrated by measurements of Portland cement.

  10. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    SciTech Connect (OSTI)

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of charge carriers is known to evolve as the carrier concentration increases, due to the presence of intrinsic disorder in organic semiconductors. Thus, a complementary question is: how does the nature of charge transport change as a function of carrier concentration?

  11. Growth of single-crystal {alpha}-MnO{sub 2} nanorods on multi-walled carbon nanotubes

    SciTech Connect (OSTI)

    Chen Yong; Liu Chenguang; Liu Chang; Lu Gaoqing; Cheng Huiming

    2007-11-06

    Single-crystal {alpha}-MnO{sub 2} nanorods were grown on multi-walled carbon nanotubes (MWNTs) in H{sub 2}SO{sub 4} aqueous solution. The morphology and microstructure of the composites were examined by transmission electron microscopy, high-resolution transmission electron microscopy (HRTEM), X-ray diffractometry and energy dispersive spectroscopy (EDS). The results show that {alpha}-MnO{sub 2} single-crystal nanorods with a mean diameter of 15 nm were densely grown on the surface of MWNTs. Those MWNTs/MnO{sub 2} composites were used as an electrode material for supercapacitors, and it was found that the supercapacitor performance using MWNTs/MnO{sub 2} composites was improved largely compared to that using pure MWNTs and {alpha}-MnO{sub 2} nanorod mechanically mixed with MWNTs.

  12. Optimization of Weld Conditions and Alloy Composition for Welding of Single-Crystal Nickel-Based Superalloys

    SciTech Connect (OSTI)

    Vitek, John Michael; David, Stan A; Babu, Sudarsanam S

    2007-01-01

    Calculations were carried out to identify optimum welding conditions and weld alloy compositions to avoid stray grain formation during welding of single-crystal nickel-based superalloys. The calculations were performed using a combination of three models: a thermal model to describe the weld pool shape and the local thermal gradient and solidification front velocity; a geometric model to identify the local active dendrite growth variant, and a nucleation and growth model to describe the extent of stray grain formation ahead of the advancing solidification front. Optimum welding conditions (low weld power, high weld speed) were identified from the model calculations. Additional calculations were made to determine potential alloy modifications that reduce the solidification temperature range while maintaining high gamma prime content. The combination of optimum weld conditions and alloy compositions should allow for weld repair of single-crystal nickel-based superalloys without sacrificing properties or performance.

  13. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

    SciTech Connect (OSTI)

    Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A.; Grazianetti, C.; Fanciulli, M.; Dipartimento di Scienza dei Materiali, Universit degli Studi di Milano Bicocca, I-20126, Milano ; Chiappe, D.; Molle, A.

    2013-12-16

    Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

  14. The crystal structure of {pi}-ErBO{sub 3}: New single-crystal data for an old problem

    SciTech Connect (OSTI)

    Pitscheider, Almut [Institut fuer Allgemeine, Anorganische und Theoretische Chemie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria); Kaindl, Reinhard [Institut fuer Mineralogie und Petrographie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52, A-6020 Innsbruck (Austria); Oeckler, Oliver [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen, Butenandtstrasse 5-13, D-81377 Muenchen (Germany); Huppertz, Hubert, E-mail: Hubert.Huppertz@uibk.ac.a [Institut fuer Allgemeine, Anorganische und Theoretische Chemie, Leopold-Franzens-Universitaet Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria)

    2011-01-15

    Single crystals of the orthoborate {pi}-ErBO{sub 3} were synthesized from Er{sub 2}O{sub 3} and B{sub 2}O{sub 3} under high-pressure/high-temperature conditions of 2 GPa and 800 {sup o}C in a Walker-type multianvil apparatus. The crystal structure was determined on the basis of single-crystal X-ray diffraction data, collected at room temperature. The title compound crystallizes in the monoclinic pseudowollastonite-type structure, space group C2/c, with the lattice parameters a=1128.4(2) pm, b=652.6(2) pm, c=954.0(2) pm, and {beta}=112.8(1){sup o} (R{sub 1}=0.0124 and wR{sub 2}=0.0404 for all data). -- graphical abstract: The first satisfying single-crystal structure determination of {pi}-ErBO{sub 3} sheds light on the extensively discussed structure of {pi}-orthoborates. The application of light pressure during the solid state synthesis yielded in high-quality crystals, due to pressure-induced crystallization. Research highlights: {yields} High-quality single crystals of {pi}-ErBO{sub 3} were prepared via high-pressure-induced crystallization. {yields} At least five different space groups for the rare-earth {pi}-orthoborates are reported. {yields} {pi}-ErBO{sub 3} is isotypic to the pseudowollastonite-type CaSiO{sub 3}. {yields} Remaining ambiguities regarding the structure of the rare-earth {pi}-orthoborates are resolved.

  15. Thermal-mechanical stability of single crystal oxide refractive concentrators for high-temperature solar thermal propulsion

    SciTech Connect (OSTI)

    Zhu, D.; Jacobson, S.; Miller, R.A.

    1999-07-01

    Single crystal oxides such as yttria-stabilized zirconia (Y{sub 2}O{sub 3}-ZrO{sub 2}), yttrium aluminum garnet (Y{sub 3}Al{sub 5}O{sub 12}, or YAG), magnesium oxide (MgO) and sapphire (Al{sub 2}O{sub 3}) are candidate refractive secondary concentrator materials for high temperature solar propulsion applications. However, thermo-mechanical reliability of these components in severe thermal environments during the space mission sun/shade transition is of great concern. Simulated mission tests are important for evaluating these candidate oxide materials under a variety of transient and steady-state heat flux conditions, and thus provide vital information for the component design. In this paper, a controlled heat flux thermal shock test approach is established for the single crystal oxide materials using a 3.0 kW continuous wave CO{sub 2} laser, with a wavelength 10.6 micron. Thermal fracture behavior and failure mechanisms of these oxide materials are investigated and critical temperature gradients are determined under various temperature and heating conditions. The test results show that single crystal sapphire is able to sustain the highest temperature gradient and heating-cooling rate, and thus exhibit the best thermal shock resistance, as compared to the yttria-stabilized zirconia, yttrium aluminum garnet and magnesium oxide.

  16. Method of bonding single crystal quartz by field-assisted bonding

    DOE Patents [OSTI]

    Curlee, Richard M.; Tuthill, Clinton D.; Watkins, Randall D.

    1991-01-01

    The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals.

  17. Method of bonding single crystal quartz by field-assisted bonding

    DOE Patents [OSTI]

    Curlee, R.M.; Tuthill, C.D.; Watkins, R.D.

    1991-04-23

    The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals. 2 figures.

  18. Performance Test of Amorphous Silicon Modules in Different Climates - Year Four: Progress in Understanding Exposure History Stabilization Effects; Preprint

    SciTech Connect (OSTI)

    Ruther, R.; Montenegro, A. A.; del Cueto, J.; Rummel, S.; Anderberg, A.; von Roedern, B.; Tamizh-Mani, G.

    2008-05-01

    The four-year experiment involved three identical sets of thin-film a-Si modules from various manufacturers deployed outdoors simultaneously in three sites with distinct climates. Each PV module set spent a one-year period at each site before a final period at the original site where it was first deployed.

  19. TH-C-19A-06: Measurements with a New Commercial Synthetic Single Crystal Diamond Detector

    SciTech Connect (OSTI)

    Laub, W; Crilly, R

    2014-06-15

    Purpose: A commercial version of a synthetic single crystal diamond detector in a Scottky diode configuration was recently released as the new type 60019 microDiamond detector (PTW-Freiburg). In this study we investigate the dosimetric properties of this detector and explore if the use of the microDiamond detector can be expanded to high energy photon beams of up to 15MV and to large field measurements. Methods: Energy dependency was investigated. Photon and electron depth-dose curves were measured. Photon PDDs were measured with the Semiflex type 31010, microLion type 31018, P-Diode type 60016, SRS Diode type 60018, and the microDiamond type 60019 detector. Electron depth-dose curves were measured with a Markus chamber type 23343, an E Diode type 60017 and the microDiamond type 60019 detector (all PTW-Freiburg). Profiles were measured with the E-Diode and microDiamond at dose maximum depths. Results: The microDiamond detector shows no energy dependence in high energy photon or electron dosimetry. Electron PDD measurements with the E-Diode and microDiamond are in good agreement except for the bremsstrahlungs region, where values are about 0.5 % lower with the microDiamond detector. Markus detector measurements agree with E-Diode measurements in this region. For depths larger than dmax, depth-dose curves of photon beams measured with the microDiamond detector are in close agreement to those measured with the microLion detector for small fields and with those measured with a Semiflex 0.125cc ionization chamber for large fields. For profile measurements, microDiamond detector measurements agree well with microLion and P-Diode measurements in the high-dose region and the penumbra region. For areas outside the open field, P-Diode measurements are about 0.5–1.0% higher than microDiamond and microLion measurements. Conclusion: The investigated diamond detector is suitable for a wide range of applications in high energy photon and electron dosimetry and is interesting for relative as well as absolute dosimetry.

  20. Intercalation of organic molecules into SnS{sub 2} single crystals

    SciTech Connect (OSTI)

    Toh, M.L.; Tan, K.J.; Wei, F.X.; Zhang, K.K.; Jiang, H.; Kloc, C.

    2013-02-15

    SnS{sub 2} is a layered semiconductor with a van der Waals gap separating the covalently bonded layers. In this study, post-synthesis intercalation of donor organic amine molecules, such as ethylenediamine (en), into tin disulfide and secondary intercalation of p-phenylenediamine (PPD) and 1, 5-naphthalenediamine (NDA) into SnS{sub 2e}n have been verified with X-ray diffraction. PPD and NDA did not intercalate directly even during prolonged annealing but replaced en readily if en was already present in the van der Waals gap. The c-lattice dilation is proportional to the intercalant size. Unit cell lattices of intercalated products were determined from the positions of the X-ray diffraction peaks. Optical images taken during the intercalation showed that intercalation progressed from the periphery towards the interior of the crystal. TEM diffraction patterns in the [0 0 1] direction of SnS{sub 2} after intercalation revealed defects and stacking mismatches among the SnS{sub 2} layers caused by the intercalation. UV-Vis absorption studies showed a red shift in the band edge of the SnS{sub 2} material after intercalation. The band edge was 2.2 eV for pristine SnS{sub 2}; after intercalation with en or PPD, the absorbance spectra band edges shifted to approximately 0.7 eV or 0.5 eV, respectively. - Graphical Abstract: SnS{sub 2} single crystals were intercalated with organic amine molecules such as ethylenediamine, phenylenediamine and naphthalenediamine. Absorption studies showed red shift of band edge after intercalation, which was consistent with optical observations. X-ray diffraction indicated lattice dilation in the c-lattice of SnS{sub 2} after intercalation. Highlights: Black-Right-Pointing-Pointer Organic molecules intercalated inhomogenously between covalently bonded SnS{sub 2} layers. Black-Right-Pointing-Pointer Ethylenediamine (en) intercalate directly into SnS{sub 2}. Black-Right-Pointing-Pointer Phenylenediamine (PPD) and naphthalenediamine (NDA) can be intercalated into SnS{sub 2} secondary. Black-Right-Pointing-Pointer In a secondary intercalation the bonds between layers are weakened by direct intercalation of (en). Black-Right-Pointing-Pointer The optical band gap of SnS{sub 2} is reduced due to intercalation.

  1. Crystallographic, electronic, thermal, and magnetic properties of single-crystal SrCo2As2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pandey, Abhishek; Quirinale, D. G.; Jayasekara, W.; Sapkota, A.; Kim, M. G.; Dhaka, R. S.; Lee, Y.; Heitmann, T. W.; Stephens, P. W.; Ogloblichev, V.; et al

    2013-07-01

    In tetragonal SrCo2As2 single crystals, inelastic neutron scattering measurements demonstrated that strong stripe-type antiferromagnetic (AFM) correlations occur at a temperature T = 5 K [W. Jayasekara et al., arXiv:1306.5174] that are the same as in the isostructural AFe2As2 (A = Ca, Sr, Ba) parent compounds of high-Tc superconductors. This surprising discovery suggests that SrCo2As2 may also be a good parent compound for high-Tc superconductivity. Here, structural and thermal expansion, electrical resistivity ρ, angle-resolved photoemission spectroscopy (ARPES), heat capacity Cp, magnetic susceptibility χ, 75As NMR and neutron diffraction measurements of SrCo2As2 crystals are reported together with LDA band structure calculations thatmore » shed further light on this fascinating material. The c-axis thermal expansion coefficient αc is negative from 7 to 300 K, whereas αa is positive over this T range. The ρ(T) shows metallic character. The ARPES measurements and band theory confirm the metallic character and in addition show the presence of a flat band near the Fermi energy EF. The band calculations exhibit an extremely sharp peak in the density of states D(EF) arising from a flat dx2-y2 band. A comparison of the Sommerfeld coefficient of the electronic specific heat with χ(T → 0) suggests the presence of strong ferromagnetic itinerant spin correlations which on the basis of the Stoner criterion predicts that SrCo2As2 should be an itinerant ferromagnet, in conflict with the magnetization data. The χ(T) does have a large magnitude, but also exhibits a broad maximum at 115 K suggestive of dynamic short-range AFM spin correlations, in agreement with the neutron scattering data. The measurements show no evidence for any type of phase transition between 1.3 and 300 K and we propose that metallic SrCo2As2 has a gapless quantum spin-liquid ground state.« less

  2. Method of forming crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, A.M.

    1995-03-21

    A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

  3. Method of forming crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    1995-01-01

    A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

  4. Method for fabricating transistors using crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    1997-01-01

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

  5. Light-trapped, interconnected, silicon-film {trademark} modules. Annual subcontract report, 18 November 1994--18 November 1995

    SciTech Connect (OSTI)

    Hall, R.B.; Rand, J.A.; Cotter, J.E.; Ford, D.H.

    1996-03-01

    This report describes the first year of work performed by AstroPower, Inc., of Newark, Delaware, under the Thin-Film PV Partnership Program. The work led to the development of a new barrier-coated substrate that has enabled high-quality thin-layer polycrystalline silicon to be grown on a low-cost substrate. High diffusion lengths were measured after external phosphorous gettering. This led to a confirmed efficiency for a 0.57cm{sup 2}, thin-layer solar cell grown on a low-cost substrate.

  6. The polarization trajectory of terahertz magnetic dipole radiation in (110)-oriented PrFeO{sub 3} single crystal

    SciTech Connect (OSTI)

    Song, Gaibei; Jin, Zuanming; Lin, Xian; Jiang, Junjie; Wang, Xinyan; Wu, Hailong; Ma, Guohong E-mail: sxcao@shu.edu.cn; Cao, Shixun E-mail: sxcao@shu.edu.cn

    2014-04-28

    By using the polarized terahertz (THz) time-domain spectroscopy, the macro-magnetization motion in (110)-oriented PrFeO{sub 3} single crystal was constructed. We emphasize that the trajectory of the emitted THz waveforms relies on not only the motion of macroscopic magnetization vector, but also the spin configuration in the ground state and the propagation of THz pulse. The azimuthal angle (the incident THz pulse polarization with respect to the crystal axes) enables us to control the polarization trajectories of the quasiferromagnetic and quasiantiferromagnetic mode radiations that can lead to further applications on multiple information storing and quantum processing.

  7. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    SciTech Connect (OSTI)

    Roberts, J.G.

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  8. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  9. Method for forming silicon on a glass substrate

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    1995-01-01

    A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

  10. Giant magnetocaloric effect and temperature induced magnetization jump in GdCrO{sub 3} single crystal

    SciTech Connect (OSTI)

    Yin, L. H.; Yang, J.; Kan, X. C.; Song, W. H.; Dai, J. M.; Sun, Y. P.

    2015-04-07

    We report on a systematic study of the single-crystal GdCrO{sub 3}, which shows various novel magnetic features, such as temperature-induced magnetization reversal (TMR), temperature-induced magnetization jump (TMJ), spin reorientation, and giant magnetocaloric effect (MCE). In the field-cooled cooling process with modest magnetic field along the c axis, GdCrO{sub 3} first shows a TMR at T{sub comp}∼120−130 K and then an abrupt TMJ with a sign change of magnetization at T{sub jump}∼52−120 K, and finally a spin reorientation at T{sub SR}∼4−7 K. Interestingly, the remarkable TMJ behavior, which was not reported ever before, persists at higher fields up to 10 kOe even when TMR disappears. In addition, giant MCE with the maximum value of magnetic entropy change reaching ∼31.6 J/kg K for a field change of 44 kOe was also observed in GdCrO{sub 3} single crystal, suggesting it could be a potential material for low-T magnetic refrigeration. A possible mechanism for these peculiar magnetic behaviors is discussed based on the various competing magnetic interactions between the 3d electrons of Cr{sup 3+} ions and 4f electrons of Gd{sup 3+} ions.

  11. Experimental and theoretical investigations of non-centrosymmetric 8-hydroxyquinolinium dibenzoyl-(L)-tartrate methanol monohydrate single crystal

    SciTech Connect (OSTI)

    Sudharsana, N.; Krishnakumar, V.; Nagalakshmi, R.

    2015-01-15

    Graphical abstract: ORTEP diagram of HQDBT. - Highlights: • Single crystal XRD and NMR studies confirm the formation of the title compound. • SHG efficiency was found to be 0.6 times that of KDP. • First-order hyperpolarizability (β) was calculated using HF and B3LYP methods. - Abstract: A novel 8-hydroxyquinolinium dibenzoyl-(L)-tartrate methanol monohydrate crystal has been grown by slow evaporation technique. The single crystal X-ray diffraction analysis has been done for the title compound and is found to crystallize in orthorhombic space group P2{sub 1}2{sub 1}2{sub 1}. The optical absorption cut-off wavelength is found to be 440 nm. The vibrational analysis has been carried out to assess the functional groups present in the title compound. The molecular structure of the title compound has been confirmed by nuclear magnetic resonance spectroscopy. Thermogravimetric, differential scanning calorimetric and differential thermal analyses reveal the melting point and thermal stability of the title compound. The second harmonic generation efficiency is confirmed by Kurtz–Perry powder technique. Further quantum chemical calculations are performed using Gaussian 03 software.

  12. Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and methods of synthesizing the same

    DOE Patents [OSTI]

    Ciszek, Theodore F.

    1988-01-01

    New alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2 (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIn.sub.y Ga.sub.(1-y) Se.sub.2 (where y ranges between 0 and 1 and preferably has a value of about 0.90) in the form of single crystals with enhanced structure perfection, which crystals are substantially free of fissures are disclosed. Processes are disclosed for preparing the new alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2. The process includes placing stoichiometric quantities of a Cu, Ag, In, and Se reaction mixture or stoichiometric quantities of a Cu, In, Ga, and Se reaction mixture in a refractory crucible in such a manner that the reaction mixture is surrounded by B.sub.2 O.sub.3, placing the thus loaded crucible in a chamber under a high pressure atmosphere of inert gas to confine the volatile Se to the crucible, and heating the reaction mixture to its melting point. The melt can then be cooled slowly to form, by direct solidification, a single crystal with enhanced structure perfection, which crystal is substantially free of fissures.

  13. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    SciTech Connect (OSTI)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  14. Large single crystal quaternary alloys of IB-IIIA-Se/sub 2/ and methods of synthesizing the same

    DOE Patents [OSTI]

    Ciszek, T.F.

    1986-07-15

    New alloys of Cu/sub x/Ag/sub (1-x)/InSe/sub 2/ (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIn/sub y/Ga/sub (1-y)/Se/sub 2/ (where y ranges between 0 and 1 and preferably has a value of about 0.90) in the form of single crystals with enhanced structure perfection, which crystals are substantially free of fissures, are disclosed. Processes are disclosed for preparing the new alloys of Cu/sub x/Ag/sub (1-x)/InSe/sub 2/. The process includes placing stoichiometric quantities of a Cu, Ag, In, and Se reaction mixture or stoichiometric quantities of a Cu, In, Ga, and Se reaction mixture in a refractory crucible in such a manner that the reaction mixture is surrounded by B/sub 2/O/sub 3/, placing the thus loaded crucible in a chamber under a high pressure atmosphere of inert gas to confine the volatile Se to the crucible, and heating the reaction mixture to its melting point. The melt can then be cooled slowly to form, by direct solidification, a single crystal with enhanced structure perfection, which crystal is substantially free of fissures.

  15. ThinSilicon | Open Energy Information

    Open Energy Info (EERE)

    ThinSilicon Place: California Product: US-based developer of thin-film PV module manufacturing technology. References: ThinSilicon1 This article is a stub. You can help OpenEI...

  16. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    SciTech Connect (OSTI)

    Maruska, P.

    1996-09-01

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  17. Transistors using crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, A.M.

    1995-05-09

    A method is disclosed for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.

  18. Phase transition in bulk single crystals and thin films of VO2 by nanoscale infrared spectroscopy and imaging

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Mengkun; Sternbach, Aaron J.; Wagner, Martin; Slusar, Tetiana V.; Kong, Tai; Bud'ko, Sergey L.; Kittiwatanakul, Salinporn; Qazilbash, M. M.; McLeod, Alexander; Fei, Zhe; et al

    2015-06-29

    We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO2 with sub-grain-size spatial resolution (~20nm), we show that epitaxial strain in VO2 thin films not only triggers spontaneous local phase separations, but leads to intermediate electronic and lattice states that are intrinsically different from those found in bulk. Generalized rules of strain- and symmetry-dependent mesoscopic phase inhomogeneity are also discussed. Furthermore, these results set the stage for a comprehensive understanding ofmore » complex energy landscapes that may not be readily determined by macroscopic approaches.« less

  19. Effects of composition and temperature on the large field behavior of [011]{sub C} relaxor ferroelectric single crystals

    SciTech Connect (OSTI)

    Gallagher, John A.; Lynch, Christopher S.; Tian, Jian

    2014-08-04

    The large field behavior of [011]{sub C} cut relaxor ferroelectric lead indium niobate–lead magnesium niobate–lead titanate, xPb(In{sub 1/2}Nb{sub 1/2})O{sub 3}-(1-x-y)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-yPbTiO{sub 3}, single crystals was experimentally characterized in the piezoelectric d{sub 322}-mode configuration under combined mechanical, electrical, and thermal loading. Increasing the concentration of lead indium niobate and decreasing the concentration of lead titanate in compositions near the morphotropic phase boundary resulted in a decrease of mechanical compliance, dielectric permittivity, and piezoelectric coefficients as well as a shift from a continuous to a discontinuous transformation.

  20. Catalytic hydrodechlorination of CFC-114a (CF{sub 3}-CFCl{sub 2}) over palladium single crystals

    SciTech Connect (OSTI)

    Gerken, C.A.; Rupprechter, G.; Ribeiro, F.H.; Somorjai, G.A.

    1997-12-31

    As the chlorofluorocarbons (CFC`s) are being phased out, their most promising replacements are the hydrofluorocarbons (HFC`s). In particular, CFC-12 (CF{sub 2}Cl{sub 2}), widely used as a refrigerant, for example, is being replaced by HFC-134a CF{sub 3}-CFH{sub 2}. One possible route to HFC-134a is the hydrodechlorination of CFC-114a (CF{sub 3}CFCl{sub 2}) over palladium catalysts. We report results using single crystal palladium catalysts and compare the reactivity of the low Miller index planes and a polycrystalline foil. We correlate these results with parallel UHV surface science experiments. Deuterium isotope studies (D{sub 2} rather than H{sub 2}) will also be presented and discussed. Of particular interest is an observed sample history-dependent inverse isotope effect.

  1. Sustained phase separation and spin glass in Co-doped KxFe2-ySe2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Wang, Kefeng; Opacic, M.; Lazarevic, N.; Warren, J. B.; Popovic, Z. V.; Bozin, Emil S.; Petrovic, C.

    2015-11-19

    We describe Co substitution effects in KxFe2-y-zCozSe2 (0.06 ≤ z ≤ 1.73) single crystal alloys. By 3.5% of Co doping superconductivity is suppressed whereas phase separation of semiconducting K2Fe4Se5 and superconducting/metallic KxFe2Se2 is still present. We show that the arrangement and distribution of superconducting phase (stripe phase) is connected with the arrangement of K, Fe and Co atoms. Semiconducting spin glass is found in proximity to superconducting state, persisting for large Co concentrations. At high Co concentrations ferromagnetic metallic state emerges above the spin glass. This is coincident with changes of the unit cell, arrangement and connectivity of stripemore » conducting phase.« less

  2. Growth, structural and optical characterization of L-histidine 4-nitrophenolate (LHPNP) single crystals for NLO applications

    SciTech Connect (OSTI)

    Mahadevan, M.; Ramachandran, K.; Anandan, P.; Arivanandhan, M. E-mail: royhaya@ipc.shizuoka.ac.jp; Hayakawa, Y. E-mail: royhaya@ipc.shizuoka.ac.jp

    2014-10-15

    Using slow evaporation solution growth technique, single crystals of L-histidine-4-nitro phenolate has been grown from the solution. Structural analyses were carried out by powder x-ray diffraction, FT-Raman, Fourier Transform Infrared and Nuclear Magnetic Resonance spectral methods to conform the grown crystals. Thermal stability of the grown crystals was studied by thermo-gravimetric (TG) and differential thermal analyses (DTA). UV-Vis spectral analysis has been carried out to find the transparency of the grown crystal. Nonlinear optical property has been confirmed by Kurtz powder technique. The PL measurements were carried out in Perkin Elmer LS 55 Luminescence spectrometer using 410 nm as excitation wavelength. The observed properties have confirmed that the grown crystal is suitable for nonlinear optical applications.

  3. First order magnetic transition in single crystal CaFe2As2 detected by 75As NMR

    SciTech Connect (OSTI)

    Baek, Seung Ho; Curro, Nicholas J

    2008-01-01

    We report {sup 75}As Nuclear Magnetic Resonance data in a single crystal of CaFe{sub 2}As{sub 2}. The Knight shift, the electric field gradient, and the spin lattice relaxation rate are strongly temperature dependent in the paramagnetic state, and change discontinuously at the structural transition temperature, T{sub S} = T{sub N} = 167 K. Immediately below, the NMR spectra reveal an internal field at the As site associated with the presence of a commensurate magnetic order. These results indicate that the structural and magnetic transitions in CaFe{sub 2}As{sub 2} are first order and strongly coupled, and that the electron density in the FeAs plane is highly sensitive to the out-of-plane structure.

  4. A 31?T split-pair pulsed magnet for single crystal x-ray diffraction at low temperature

    SciTech Connect (OSTI)

    Duc, F.; Frings, P.; Nardone, M.; Billette, J.; Zitouni, A.; Delescluse, P.; Bard, J.; Nicolin, J. P.; Rikken, G. L. J. A.; Fabrges, X.; Roth, T.; Detlefs, C.; Lesourd, M.; Zhang, L.

    2014-05-15

    We have developed a pulsed magnet system with panoramic access for synchrotron x-ray diffraction in magnetic fields up to 31?T and at low temperature down to 1.5?K. The apparatus consists of a split-pair magnet, a liquid nitrogen bath to cool the pulsed coil, and a helium cryostat allowing sample temperatures from 1.5 up to 250?K. Using a 1.15?MJ mobile generator, magnetic field pulses of 60?ms length were generated in the magnet, with a rise time of 16.5?ms and a repetition rate of 2 pulses/h at 31?T. The setup was validated for single crystal diffraction on the ESRF beamline ID06.

  5. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    SciTech Connect (OSTI)

    Fisher, Ian Randal

    2012-05-08

    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  6. Insulating and metallic spin glass in Ni-doped KxFe2-ySe? single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Abeykoon, Milinda; Wang, Kefeng; Lei, Hechang; Lazarevic, N.; Warren, J. B.; Bozin, E. S.; Popovic, Z. V.; Petrovic, C.

    2015-05-04

    We report electron doping effects by Ni in KxFe2-?-yNiySe? (0.06 ? y ? 1.44) single crystal alloys. A rich ground state phase diagram is observed. A small amount of Ni (~ 4%) suppressed superconductivity below 1.8 K, inducing insulating spin glass magnetic ground state for higher Ni content. With further Ni substitution, metallic resistivity is restored. For high Ni concentration in the lattice the unit cell symmetry is high symmetry I4/mmm with no phase separation whereas both I4/m + I4/mmm space groups were detected in the phase separated crystals when concentration of Ni morewith the absence of crystalline Fe vacancy order.less

  7. Synthesis and single crystal x-ray diffraction study of a Schiff base derived from 4-acylpyrazolone and 2-aminophenol

    SciTech Connect (OSTI)

    Sharma, Naresh; Kant, Rajni Gupta, Vivek K.; Jadeja, R. N.

    2014-04-24

    The title compound, (Z)-1-(3-chlorophenyl)-4[1((2hydroxyphenyl)amino)propylidene] -3-methyl-1H-pyrazol-5(4H)-one was synthesized by refluxing compound 1-(m-chlorophenyl)-3-methyl-4-propionyl-5-pyrazolone, with 2-aminophenol in ethanol. The compound crystallizes in the orthorhombic crystal system with space group Pca2{sub 1} having unit cell parameters: a = 26.2993(8), b = 7.0724(2) and c = 18.7170(5)Å. The structure contains two crystallographically independent molecules, A, and, B, in the asymmetric unit cell. The crystal structure was solved by direct method using single crystal X-ray diffraction data collected at room temperature and refined by full-matrix least-squares procedures to a final R- value of 0.049 for 5207 observed reflections.

  8. Ellipsometric characterization and density-functional theory analysis of anisotropic optical properties of single-crystal ?-SnS

    SciTech Connect (OSTI)

    Banai, R. E.; Brownson, J. R. S.; Burton, L. A.; Walsh, A.; Choi, S. G. To, B.; Hofherr, F.; Sorgenfrei, T.; Crll, A.

    2014-07-07

    We report on the anisotropic optical properties of single-crystal tin monosulfide (SnS). The components ?{sub a}, ?{sub b}, and ?{sub c} of the pseudodielectric-function tensor (?)=(??)+i(??) spectra are taken from 0.73 to 6.45 eV by spectroscopic ellipsometry. The measured (?) spectra are in a good agreement with the results of the calculated dielectric response from hybrid density functional theory. The (?) spectra show the direct band-gap onset and a total of eight above-band-gap optical structures that are associated with the interband-transition critical points (CPs). We obtain accurate CP energies by fitting analytic CP expressions to second-energy-derivatives of the (?) data. Their probable electronic origins and implications for photovoltaic applications are discussed.

  9. Insulating and metallic spin glass in Ni-doped K x Fe 2 - y Se 2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Abeykoon, Milinda; Wang, Kefeng; Lei, Hechang; Lazarevic, N.; Warren, J. B.; Bozin, E. S.; Popovic, Z. V.; Petrovic, C.

    2015-05-04

    We report electron doping effects by Ni in KxFe2-δ-yNiySe₂(0.06≤y≤1.44) single-crystal alloys. A rich ground-state phase diagram is observed. A small amount of Ni (~4%) suppressed superconductivity below 1.8 K, inducing insulating spin-glass magnetic ground state for higher Ni content. With further Ni substitution, metallic resistivity is restored. For high Ni concentration in the lattice the unit cell symmetry is high symmetry I4/mmm with no phase separation whereas both I4/m+I4/mmm space groups were detected in the phase separated crystals when concentration of Ni < Fe. The absence of superconductivity coincides with the absence of crystalline Fe vacancy order.

  10. Sustained phase separation and spin glass in Co-doped KxFe2?ySe2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Wang, Kefeng; Opacic, M.; Lazarevic, N.; Warren, J. B.; Popovic, Z. V.; Bozin, Emil S.; Petrovic, C.

    2015-11-19

    We describe Co substitution effects in KxFe2-y-zCozSe2 (0.06 ? z ? 1.73) single crystal alloys. By 3.5% of Co doping superconductivity is suppressed whereas phase separation of semiconducting K2Fe4Se5 and superconducting/metallic KxFe2Se2 is still present. We show that the arrangement and distribution of superconducting phase (stripe phase) is connected with the arrangement of K, Fe and Co atoms. Semiconducting spin glass is found in proximity to superconducting state, persisting for large Co concentrations. At high Co concentrations ferromagnetic metallic state emerges above the spin glass. This is coincident with changes of the unit cell, arrangement and connectivity of stripemoreconducting phase.less

  11. High-pressure single-crystal elasticity study of CO{sub 2} across phase I-III transition

    SciTech Connect (OSTI)

    Zhang, Jin S. Bass, Jay D.; Shieh, Sean R.; Dera, Przemyslaw; Prakapenka, Vitali

    2014-04-07

    Sound velocities and elastic moduli of solid single-crystal CO{sub 2} were measured at pressures up to 11.7(3) GPa by Brillouin spectroscopy. The aggregate adiabatic bulk modulus (K{sub S}), shear modulus (G), and their pressure derivatives for CO{sub 2} Phase I are K{sub S0}?=?3.4(6) GPa, G{sub 0}?=?1.8(2) GPa, (dK{sub S}/dP){sub 0}?=?7.8(3), (dG/dP){sub 0}?=?2.5(1), (d{sup 2}K{sub S}/dP{sup 2}){sub 0}?=??0.23(3) GPa{sup ?1}, and (d{sup 2}G/dP{sup 2}){sub 0}?=??0.10(1) GPa{sup ?1}. A small increase of elastic properties was observed between 9.8(1) and 10.5(3) GPa, in agreement with the CO{sub 2} I-III transition pressure determined from previous x-ray diffraction experiments. Above the transition pressure P{sub T}, we observed a mixture dominated by CO{sub 2}-I, with minor CO{sub 2}-III. The CO{sub 2}-I + III mixture shows slightly increased sound velocities compared to pure CO{sub 2}-I. Elastic anisotropy calculated from the single-crystal elasticity tensor exhibits a decrease with pressure beginning at 7.9(1) GPa, which is lower than P{sub T}. Our results coincide with recent X-ray Raman observations, suggesting that a pressure-induced electronic transition is related to local structural and optical changes.

  12. Van der Waals Epitaxial Growth of Single-Crystal Two-Dimensional GaSe on Graphene

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Basile, Leonardo; Huang, Bing; Ma, Cheng; Lee, Jaekwang; Vlassiouk, Ivan V.; Puretzky, Alexander A.; Lin, Ming-Wei; Chi, Miaofang; Idrobo Tapia, Juan Carlos; et al

    2015-07-22

    Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigationsmoreof interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E21g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.less

  13. Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers

    SciTech Connect (OSTI)

    Bodnar, I. V.; Ilchuk, G. A.; Petrus', R. Yu.; Rud', V. Yu.; Rud', Yu. V.; Serginov, M.

    2009-09-15

    In{sub 2}Se{sub 3} single crystals {approx}40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity ({sigma}) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In{sub 2}Se{sub 3} were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In{sub 2}Se{sub 3} structures, the nature of the interband transitions and band gap of In{sub 2}Se{sub 3} crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.

  14. Single-crystal epitaxial thin films of SrFeO{sub 2} with FeO{sub 2} 'infinite layers'

    SciTech Connect (OSTI)

    Inoue, Satoru; Kawai, Masanori; Shimakawa, Yuichi [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Mizumaki, Masaichiro; Kawamura, Naomi [Japan Synchrotron Radiation Research Institute/SPring-8, Sayo, Hyogo 679-5198 (Japan); Watanabe, Takashi; Tsujimoto, Yoshihiro; Kageyama, Hiroshi; Yoshimura, Kazuyoshi [Department of Chemistry, Graduate School of Science, Kyoto University, Sakyo, Kyoto 606-8502 (Japan)

    2008-04-21

    Single-crystal thin films of SrFeO{sub 2}, which is an oxygen-deficient perovskite with ''infinite layers'' of Fe{sup 2+}O{sub 2}, were prepared by using CaH{sub 2} for low-temperature reduction of epitaxial SrFeO{sub 2.5} single-crystal films deposited on KTaO{sub 3} substrates. This reduction process, removing oxygen ions from the perovskite structure framework and causing rearrangements of oxygen ions, topotactically transforms the brownmillerite SrFeO{sub 2.5} to the c-axis oriented SrFeO{sub 2}.

  15. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  16. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  17. Resolution of the discrepancy between the variation of the physical properties of Ce1-xYbxCoIn5 single crystals and thin films with Yb composition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jang, S.; White, B. D.; Lum, I. K.; Kim, H.; Tanatar, M. A.; Straszheim, W. E.; Prozorov, R.; Keiber, T.; Bridges, F.; Shu, L.; et al

    2014-11-18

    The extraordinary electronic phenomena including an Yb valence transition, a change in Fermi surface topology, and suppression of the heavy fermion quantum critical field at a nominal concentration x≈0.2 have been found in the Ce1-xYbxCoIn5 system. These phenomena have no discernable effect on the unconventional superconductivity and normal-state non-Fermi liquid behaviour that occur over a broad range of x up to ~0.8. However, the variation of the coherence temperature T* and the superconducting critical temperature Tc with nominal Yb concentration x for bulk single crystals is much weaker than that of thin films. To determine whether differences in the actualmore » Yb concentration of bulk single crystals and thin film samples might be responsible for these discrepancies, we employed Vegard’s law and the spectroscopically determined values of the valences of Ce and Yb as a function of x to determine the actual composition xact of bulk single crystals. This analysis is supported by energy-dispersive X-ray spectroscopy, wavelength-dispersive X-ray spectroscopy, and transmission X-ray absorption edge spectroscopy measurements. The actual composition xact is found to be about one-third of the nominal concentration x up to x~0.5, and resolves the discrepancy between the variation of the physical properties of Ce1-xYbxCoIn5 single crystals and thin films with Yb concentration.« less

  18. Antiferromagnetism in EuCu2As2 and EuCu1.82Sb2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anand, V. K.; Johnston, D. C.

    2015-05-07

    Single crystals of EuCu2As2 and EuCu2Sb2 were grown from CuAs and CuSb self-flux, respectively. The crystallographic, magnetic, thermal, and electronic transport properties of the single crystals were investigated by room-temperature x-ray diffraction (XRD), magnetic susceptibility χ versus temperature T, isothermal magnetization M versus magnetic field H, specific heat Cp(T), and electrical resistivity ρ(T) measurements. EuCu2As2 crystallizes in the body-centered tetragonal ThCr2Si2-type structure (space group I4/mmm), whereas EuCu2Sb2 crystallizes in the related primitive tetragonal CaBe2Ge2-type structure (space group P4/nmm). The energy-dispersive x-ray spectroscopy and XRD data for the EuCu2Sb2 crystals showed the presence of vacancies on the Cu sites, yielding themore » actual composition EuCu1.82Sb2. The ρ(T) and Cp(T) data reveal metallic character for both EuCu2As2 and EuCu1.82Sb2. Antiferromagnetic (AFM) ordering is indicated from the χ(T),Cp(T), and ρ(T) data for both EuCu2As2 (TN = 17.5 K) and EuCu1.82Sb2 (TN = 5.1 K). In EuCu1.82Sb2, the ordered-state χ(T) and M(H) data suggest either a collinear A-type AFM ordering of Eu+2 spins S = 7/2 or a planar noncollinear AFM structure, with the ordered moments oriented in the tetragonal ab plane in either case. This ordered-moment orientation for the A-type AFM is consistent with calculations with magnetic dipole interactions. As a result, the anisotropic χ(T) and isothermal M(H) data for EuCu2As2, also containing Eu+2 spins S = 7/2, strongly deviate from the predictions of molecular field theory for collinear AFM ordering and the AFM structure appears to be both noncollinear and noncoplanar.« less

  19. Development and turbine engine performance of three advanced rhenium containing superalloys for single crystal and directionally solidified blades and vanes

    SciTech Connect (OSTI)

    Broomfield, R.W.; Ford, D.A.; Bhangu, J.K.; Thomas, M.C.; Frasier, D.J.; Burkholder, P.S.; Harris, K.; Erickson, G.L.; Wahl, J.B.

    1998-07-01

    Turbine inlet temperatures over the next few years will approach 1,650 C (3,000 F) at maximum power for the latest large commercial turbofan engines, resulting in high fuel efficiency and thrust levels approaching 445 kN (100,000 lbs). High reliability and durability must be intrinsically designed into these turbine engines to meet operating economic targets and ETOPS certification requirements. This level of performance has been brought about by a combination of advances in air cooling for turbine blades and vanes, design technology for stresses and airflow, single crystal and directionally solidified casting process improvements, and the development and use of rhenium (Re) containing high {gamma}{prime} volume fraction nickel-base superalloys with advanced coatings, including full-airfoil ceramic thermal barrier coatings. Re additions to cast airfoil superalloys not only improves creep and thermo-mechanical fatigue strength, but also environmental properties including coating performance. Re dramatically slows down diffusion in these alloys at high operating temperatures. A team approach has been used to develop a family of two nickel-base single crystal alloys (CMSX-4 containing 3% Re and CMSX-10 containing 6% Re) and a directionally solidified, columnar grain nickel-base alloy (CM 186 LC containing 3% Re) for a variety of turbine engine applications. A range of critical properties of these alloys is reviewed in relation to turbine component engineering performance through engine certification testing and service experience. Industrial turbines are now commencing to use this aero developed turbine technology in both small and large frame units in addition to aero-derivative industrial engines. These applications are demanding, with high reliability required for turbine airfoils out to 25,000 hours, with perhaps greater than 50% of the time spent at maximum power. Combined cycle efficiencies of large frame industrial engines are scheduled to reach 60% in the US ATS program. Application experience to a total 1.3 million engine hours and 28,000 hours individual blade set service for CMSX-4 first stage turbine blades is reviewed for a small frame industrial engine.

  20. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    SciTech Connect (OSTI)

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  1. Thermal chemistry of copper(I)-N,N '-di-sec-butylacetamidinate on Cu(110) single-crystal surfaces

    SciTech Connect (OSTI)

    Ma Qiang; Zaera, Francisco; Gordon, Roy G.

    2012-01-15

    The surface chemistry of copper(I)-N,N'-di-sec-butylacetamidinate on Cu(110) single-crystal surfaces has been characterized under ultrahigh vacuum by temperature programmed desorption (TPD) and X-ray photoelectron spectroscopy. A series of thermal stepwise conversions were identified, starting with the partial dissociative adsorption of the copper acetamidinate dimers into a mixture of monomers and dimers on the surface. An early dissociation of a C-N bond leads to the production of N-sec-butylacetamidine, which is detected in TPD experiments in three temperature regimes, the last one centered around 480 K. Butene, and a small amount of butane, is also detected above approximately 500 K, and hydrogen production, an indication of dehydrogenation of surface fragments, is observed at 460, 550 and 670 K. In total, only about 10% of the initial copper(I)-N,N'-di-sec-butylacetamidinate adsorbed monolayer decomposes, and only about {approx}3% of carbon is left behind on the surface after heating to high temperatures. The implications of this surface chemistry to the design of chemical film growth processes using copper acetamidinates as precursors are discussed.

  2. Phase coexistence and transformations in field-cooled ternary piezoelectric single crystals near the morphotropic phase boundary

    SciTech Connect (OSTI)

    Luo, Chengtao; Wang, Yaojin Wang, Zhiguang; Ge, Wenwei; Li, Jiefang; Viehland, D.; Luo, Haosu

    2014-12-08

    Structural phase transformations in (100)-oriented Pb(In{sub 1/2}Nb{sub 1/2})O{sub 3}-Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} single crystals have been investigated by X-ray diffraction. A cubic (C) → tetragonal (T) → monoclinic-C (M{sub C}) transformation sequence was observed in the field-cooled condition. Two phase coexistence regions of C + T and T + M{sub C} were found. In addition to an increase in the C → T phase transition temperature and a decrease of the T → M{sub C} one, a broadening of the coexistence regions was also found with increasing field. This broadening can be explained by the presence of polar nano regions within the C, T, and M{sub C} phase regions.

  3. Dentritic morphology and microsegregation in directionally solidified superalloy, PWA-1480, single crystal: Effect of gravity; center director's discretionary fund report

    SciTech Connect (OSTI)

    Tewari, S.N.; Kumar, M.V.; Lee, J.E.; Curreri, P.A.

    1990-11-01

    Primary dendrite spacings, secondary dendrite spacings, and microsegregation have been examined in PWA-1480 single crystal specimens which were directionally solidified during parabolic maneuvers on the KC-135 aircraft. Experimentally observed growth rate and thermal gradient dependence of primary dendrite spacings are in good agreement with predictions from dendrite growth models for binary alloys. Secondary dendrite coarsening kinetics show a reasonable fit with the predictions from an analytical model proposed by Kirkwood for a binary alloy. The partition coefficients of tantalum, titanium, and aluminum are observed to be less than unity, while that for tungsten and cobalt are greater than unity. This is qualitatively similar to the nickel base binaries. Microsegregation profiles experimentally observed for PWA-1480 superalloy show a good fit with Bower, Brody, and Flemings model developed for binary alloys. Transitions in gravity levels do not appear to affect primary dendrite spacings. A trend of decreased secondary arm spacings with transition from high gravity to the low gravity period was observed at a growth speed of 0.023 cm s(exp -1). However, definite conclusions can only be drawn by experiments at lower growth speeds which make it possible to examine the side-branch coarsening kinetics over a longer duration. Such experiments, not possible due to the insufficient low-gravity time of the KC-135, may be carried out in the low-gravity environment of space.

  4. Boost the electron mobility of solution-grown organic single crystals via reducing the amount of polar solvent residues

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xue, Guobiao; Xin, Huolin L.; Wu, Jiake; Fan, Congcheng; Liu, Shuang; Huang, Zhuoting; Liu, Yujing; Shan, Bowen; Miao, Qian; Chen, Hongzheng; et al

    2015-10-29

    Enhancing electron transport to match with the development in hole transport is critical for organic electronics in the future. As electron motion is susceptible to extrinsic factors, seeking these factors and avoiding their negative effects have become the central challenge. Here, the existence of polar solvent residues in solution-grown single-crystals of 6,13-bis(triisopropylsilylethynyl)-5,7,12,14-tetraazapentacene is identified as a factor detrimental to electron motion. Field-effect transistors of the crystals exhibit electron mobility boosted by about 60% after the residues are removed. The average electron mobility reaches up to 8.0 ± 2.2 cm2 V–1 s–1 with a highest value of 13.3 cm2 V–1 s–1;more » these results are significantly higher than those obtained previously for the same molecule (1.0–5.0 cm2 V–1 s–1). Furthermore, the achieved mobility is also higher than the maximum reported electron mobility for organic materials (11 cm2 V–1 s–1). As a result, this work should greatly accelerate the advancement of organic electron-transporting materials.« less

  5. Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

    SciTech Connect (OSTI)

    Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-04-01

    FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe{sub 50}Co{sub 50} alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal.

  6. Preparation and structural characterization of FeCo epitaxial thin films on insulating single-crystal substrates

    SciTech Connect (OSTI)

    Nishiyama, Tsutomu; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    FeCo epitaxial films were prepared on MgO(111), SrTiO{sub 3}(111), and Al{sub 2}O{sub 3}(0001) single-crystal substrates by ultrahigh vacuum molecular beam epitaxy. The effects of insulating substrate material on the film growth process and the structures were investigated. FeCo(110){sub bcc} films grow on MgO substrates with two type domains, Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS) relationships. On the contrary, FeCo films grown on SrTiO{sub 3} and Al{sub 2}O{sub 3} substrates include FeCo(111){sub bcc} crystal in addition to the FeCo(110){sub bcc} crystals with NW and KS relationships. The FeCo(111){sub bcc} crystal consists of two type domains whose orientations are rotated around the film normal by 180 deg. each other. The out-of-plane and the in-plane lattice spacings of FeCo(110){sub bcc} and FeCo(111){sub bcc} crystals formed on the insulating substrates are in agreement with those of the bulk Fe{sub 50}Co{sub 50} (at. %) crystal with small errors ranging between +0.2% and +0.4%, showing that the strains in the epitaxial films are very small.

  7. Nature of red luminescence band in research-grade ZnO single crystals: A self-activated configurational transition

    SciTech Connect (OSTI)

    Chen, Y. N.; Xu, S. J. Zheng, C. C.; Ning, J. Q.; Ling, F. C. C.; Anwand, W.; Brauer, G.; Skorupa, W.

    2014-07-28

    By implanting Zn{sup +} ions into research-grade intentionally undoped ZnO single crystal for facilitating Zn interstitials (Zn{sub i}) and O vacancies (V{sub O}) which is revealed by precise X-Ray diffraction rocking curves, we observe an apparent broad red luminescence band with a nearly perfect Gaussian lineshape. This red luminescence band has the zero phonon line at ?2.4 eV and shows distinctive lattice temperature dependence which is well interpreted with the configurational coordinate model. It also shows a low kick out thermal energy and small thermal quenching energy. A self-activated optical transition between a shallow donor and the defect center of Zn{sub i}-V{sub O} complex or V{sub Zn}V{sub O} di-vacancies is proposed to be responsible for the red luminescence band. Accompanied with the optical transition, large lattice relaxation simultaneously occurs around the center, as indicated by the generation of multiphonons.

  8. AN INVESTIGATION INTO THE MECHANICS OF SINGLE CRYSTAL TURBINE BLADES WITH A VIEW TOWARDS ENHANCING GAS TURBINE EFFICIENCY

    SciTech Connect (OSTI)

    K.R. Rajagopal; I.J. Rao

    2006-05-05

    The demand for increased efficiency of gas turbines used in power generation and aircraft applications has fueled research into advanced materials for gas turbine blades that can withstand higher temperatures in that they have excellent resistance to creep. The term ''Superalloys'' describes a group of alloys developed for applications that require high performance at elevated temperatures. Superalloys have a load bearing capacity up to 0.9 times their melting temperature. The objective of the investigation was to develop a thermodynamic model that can be used to describe the response of single crystal superalloys that takes into account the microstructure of the alloy within the context of a continuum model. Having developed the model, its efficacy was to be tested by corroborating the predictions of the model with available experimental data. Such a model was developed and it is implemented in the finite element software ABAQUS/STANDARD through a user subroutine (UMAT) so that the model can be used in realistic geometries that correspond to turbine blades.

  9. Superconducting gap evolution in overdoped BaFe₂(As1-xPx)₂ single crystals through nanocalorimetry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Campanini, D.; Diao, Z.; Fang, L.; Kwok, W.-K.; Welp, U.; Rydh, A.

    2015-06-18

    We report on specific heat measurements on clean overdoped BaFe₂(As1-xPx)₂ single crystals performed with a high resolution membrane-based nanocalorimeter. A nonzero residual electronic specific heat coefficient at zero temperature γr=C/T|T→0 is seen for all doping compositions, indicating a considerable fraction of the Fermi surface ungapped or having very deep minima. The remaining superconducting electronic specific heat is analyzed through a two-band s-wave α model in order to investigate the gap structure. Close to optimal doping we detect a single zero-temperature gap of Δ₀~5.3 me V, corresponding to Δ₀/kBTc ~ 2.2. Increasing the phosphorus concentration x, the main gap reduces tillmore » a value of Δ₀ ~ 1.9 meV for x = 0.55 and a second weaker gap becomes evident. From the magnetic field effect on γr, all samples however show similar behavior [γr(H) - γr (H = 0)∝ Hn, with n between 0.6 and 0.7]. This indicates that, despite a considerable redistribution of the gap weights, the total degree of gap anisotropy does not change drastically with doping.« less

  10. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2014-06-03

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  11. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2013-05-28

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  12. Photochemical Grafting of Organic Alkenes to Single-Crystal TiO2 Surfaces: A Mechanistic Study

    SciTech Connect (OSTI)

    Franking, Ryan A.; Kim, Heesuk; Chambers, Scott A.; Mangham, Andrew N.; Hamers, Robert J.

    2012-08-21

    The UV-induced photochemical grafting of terminal alkenes has emerged as a versatile way to form molecular layers on semiconductor surfaces. Recent studies have shown that grafting reactions can be initiated by photoelectron emission into the reactant liquid as well as by excitation across the semiconductor bandgap, but the relative importance of these two processes is expected to depend on the nature of the semiconductor and the reactant alkene and the excitation wavelength. Here we report a study of the wavelength-dependent photochemical grafting of alkenes onto single-crystal TiO2 samples. Trifluoroacetamide-protected 10-aminododec-1-ene (TFAAD), 10-N-BOC-aminodec-1-ene (t-BOC) and 1-dodecene were used as model alkenes. On rutile(110), photons with energy above the bandgap but below the expected work function are not effective at inducing grafting, while photons with energy sufficient to induce electronic transitions from the TiO2 Fermi level to electronic acceptor states of the reactant molecules induce grafting. A comparison of rutile (110), rutile(001), anatase (001), and anatase(101) samples shows slightly enhanced grafting for rutile but no difference between crystal faces for a given crystal phase. Hydroxylation of the surface increases the reaction rate by lowering the work function and thereby facilitating photoelectron ejection into the adjacent alkene. These results demonstrate that photoelectron emission is the dominant mechanism responsible for grafting when using short-wavelength (~254 nm) light and suggest that photoemission events beginning on mid-gap states may play a crucial role.

  13. Synthesis, structure, growth and characterization of a novel organic NLO single crystal: Morpholin-4-ium p-aminobenzoate

    SciTech Connect (OSTI)

    Shanmugam, G.; Ravi Kumar, K.; Sridhar, B.; Brahadeeswaran, S.

    2012-09-15

    Highlights: ► A new organic NLO crystal morpholin-4-ium p-aminobenzoate has been grown for the first time. ► The structure is reported for the first time in the literature. ► Thermal, optical and SHG studies suggest its suitability for various NLO applications. -- Abstract: The title compound, morpholin-4-ium p-aminobenzoate (MPABA)(C{sub 4}H{sub 10}NO{sup +},C{sub 7}H{sub 6}NO{sub 2}{sup −}), has been synthesized for the first time by the addition of morpholine with 4-aminobenzoic acid in equi-molar ratio and good quality single crystals have been grown by solution growth technique using methanol as a solvent. The molecular structure of the compound was solved and refined by Direct Methods using SHELXS97 and full-matrix least-squares technique using SHELXL97, respectively. MPABA crystallizes in a monoclinic system with unit cell parameters, a = 5.948(5) Å, b = 18.033(4) Å, c = 10.577(5) Å, β = 90.40(1)° and non-centrosymmetric space group Cc. The experimentally measured density and chemical compositions were found to be in good agreement with the theoretical values. The phases and functional groups of MPABA have been identified and confirmed through powder X-ray diffraction and Fourier transform infrared (FTIR) studies, respectively. The thermal stability and decomposition details were studied through TG/DTA thermograms. The UV–visible transmission spectra were recorded for the grown crystal and its NLO characteristic was explored by powder second harmonic generation (SHG) studies.

  14. Radiation damage by light- and heavy-ion bombardment of single-crystal LiNbO?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Huang, Hsu-Cheng; Zhang, Lihua; Malladi, Girish; Dadap, Jerry I.; Manandhar, Sandeep; Kisslinger, Kim; Vemuri, Rama Sesha R.; Shutthanandan, Vaithiyalingam; Bakhru, Hassaram; Osgood, Jr., Richard M.

    2015-04-14

    In this work, a battery of analytical methods including in situ RBS/C, confocal micro-Raman, TEM/STEM, EDS, AFM, and optical microscopy were used to provide a comparative investigation of light- and heavy-ion radiation damage in single-crystal LiNbO?. High (~MeV) and low (~100s keV) ion energies, corresponding to different stopping power mechanisms, were used and their associated damage events were observed. In addition, sequential irradiation of both ion species was also performed and their cumulative depth-dependent damage was determined. It was found that the contribution from electronic stopping by high-energy heavy ions gave rise to a lower critical fluence for damage formationmorethan for the case of low-energy irradiation. Such energy-dependent critical fluence of heavy-ion irradiation is two to three orders of magnitude smaller than that for the case of light-ion damage. In addition, materials amorphization and collision cascades were seen for heavy-ion irradiation, while for light ion, crystallinity remained at the highest fluence used in the experiment. The irradiation-induced damage is characterized by the formation of defect clusters, elastic strain, surface deformation, as well as change in elemental composition. In particular, the presence of nanometric-scale damage pockets results in increased RBS/C backscattered signal and the appearance of normally forbidden Raman phonon modes. The location of the highest density of damage is in good agreement with SRIM calculations. (author)less

  15. Anisotropic superconducting and normal state magnetic properties of single crystals of RNi*2*B*2*C compounds (R = Y, Gd, Dy, Ho, Er, and Tm)

    SciTech Connect (OSTI)

    Cho, B.

    1995-11-01

    The interaction of superconductivity with magnetism has been one of the most interesting and important phenomena in solid state physics since the 1950`s when small amounts of magnetic impurities were incorporated in superconductors. The discovery of the magnetic superconductors RNi{sub 2}B{sub 2}C (R = rare earth, Y) offers a new system to study this interaction. The wide ranges of superconducting transition (T{sub c}) and antiferromagnetic (AF) ordering temperatures (T{sub N}) (0 K {le} T{sub c} {le} 16 K, 0 K {le} T{sub N} {le} 20 K) give a good opportunity to observe a variety of interesting phenomena. Single crystals of high quality with appropriate size and mass are crucial in examining the anisotropic intrinsic properties. Single crystals have been grown successfully by an unusual high temperature flux method and characterized thoroughly by X-ray, electrical transport, magnetization, neutron scattering, scanning electron microscopy, and other measurements.

  16. From micro- to nano-scale molding of metals : size effect during molding of single crystal Al with rectangular strip punches.

    SciTech Connect (OSTI)

    Chen, K.; Meng, W. J.; Mei, F.; Hiller, J.; Miller, D. J. (Materials Science Division); (Louisiana State Univ.); (Enervana Tech. LLC)

    2011-02-01

    A single crystal Al specimen was molded at room temperature with long, rectangular, strip diamond punches. Quantitative molding response curves were obtained at a series of punch widths, ranging from 5 {micro}m to 550 nm. A significant size effect was observed, manifesting itself in terms of significantly increasing characteristic molding pressure as the punch width decreases to 1.5 {micro}m and below. A detailed comparison of the present strip punch molding results was made with Berkovich pyramidal indentation on the same single crystal Al specimen. The comparison reveals distinctly different dependence of the characteristic pressure on corresponding characteristic length. The present results show the feasibility of micro-/nano-scale compression molding as a micro-/nano-fabrication technique, and offer an experimental test case for size-dependent plasticity theories.

  17. A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

    SciTech Connect (OSTI)

    Mokuno, Yoshiaki Kato, Yukako; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Yamada, Hideaki; Shikata, Shinichi

    2014-06-23

    A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400?cm{sup ?2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

  18. A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals

    SciTech Connect (OSTI)

    Kamlapure, Anand; Saraswat, Garima; Ganguli, Somesh Chandra; Bagwe, Vivas; Raychaudhuri, Pratap; Pai, Subash P.

    2013-12-15

    We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350 mK and in magnetic fields up to 9 T, with thin film deposition and in situ single crystal cleaving capabilities. The main focus lies on the simple design of STM head and a sample holder design that allows us to get spectroscopic data on superconducting thin films grown in situ on insulating substrates. Other design details on sample transport, sample preparation chamber, and vibration isolation schemes are also described. We demonstrate the capability of our instrument through the atomic resolution imaging and spectroscopy on NbSe{sub 2} single crystal and spectroscopic maps obtained on homogeneously disordered NbN thin film.

  19. Ultrafast free-carrier dynamics in Cu{sub 2}ZnSnS{sub 4} single crystals studied using femtosecond time-resolved optical spectroscopy

    SciTech Connect (OSTI)

    Phuong, L. Q.; Kanemitsu, Y.; Okano, M.; Yamada, Y.; Yamashita, G.; Morimoto, T.; Nagai, M.; Ashida, M.; Nagaoka, A.; Yoshino, K.

    2014-12-08

    We studied the dynamics of photogenerated carriers in Cu{sub 2}ZnSnS{sub 4} (CZTS) single crystals using femtosecond transient reflectivity (TR) and optical pump-THz probe transient absorption (THz-TA) spectroscopy. The TR and THz-TA decay dynamics consistently showed that free carriers have long lifetimes of up to a few nanoseconds. The excitation-photon-energy-dependent TR measurements revealed a slow picosecond energy relaxation of free carriers to the band edge in CZTS. The relaxation and recombination dynamics of free carriers were affected by nonradiative recombinations at the surface. Our results revealed a global feature of energy relaxation and recombination processes of free carriers in CZTS single crystals.

  20. Silicon Carbide JFET Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5kV Enhancement-Model Silicon Carbide JFET Switch The novel 6.5kV SiC device and power module represent the world's highest-voltage module based on reliable, normally-off SiC JFETs. It reduces switching losses over that of Si-IGBTs by a factor of 20 and exhibits the fastest turn- on and turn-off of any 6.5kV-rated power module. Another major aspect of what makes this product unique is USCi's development and manufacturing approach. JFETs are simple transistor switches, yet for SiC materials, a

  1. Shock wave compression of hexagonal-close-packed metal single crystals: Time-dependent, anisotropic elastic-plastic response of beryllium

    SciTech Connect (OSTI)

    Winey, J. M.; Gupta, Y. M.

    2014-07-21

    Understanding and modeling the response of hcp metals to high stress impulsive loading is challenging because the lower crystal symmetry, compared to cubic metals, results in a significantly more complex material response. To gain insight into the inelastic deformation of hcp metals subjected to high dynamic stresses, shock wave compression of single crystals provides a useful approach because different inelastic deformation mechanisms can be examined selectively by shock compression along different crystal orientations. As a representative example, we report, here, on wave propagation simulations for beryllium (Be) single crystals shocked along the c-axis, a-axis, and several low-symmetry directions to peak stresses reaching 7?GPa. The simulations utilized a time-dependent, anisotropic material model that incorporated dislocation dynamics, deformation twinning, and shear cracking based descriptions of inelastic deformation. The simulation results showed good overall agreement with measured wave profiles for all the different crystal orientations examined [Pope and Johnson, J. Appl. Phys. 46, 720 (1975)], including features arising from wave mode coupling due to the highly anisotropic inelastic response of Be. This good agreement demonstrates that the measured profiles can be understood in terms of dislocation slip along basal, prismatic, and pyramidal planes, together with deformation twinning along (101{sup }2) planes. Our results show that the response of shocked Be single crystals involves the simultaneous operation of multiple, distinct inelastic deformation mechanisms for all orientations except the c-axis. For shocked c-axis Be, the measured wave profiles do not provide good discrimination between pyramidal slip and other inelastic deformation mechanisms, such as shear cracking. The findings presented here provide insight into the complex inelastic deformation response of shocked Be single crystals and are expected to be useful for other hcp crystals. More broadly, the present work demonstrates the potential of shock wave propagation along low-symmetry directions to examine, and discriminate between, different inelastic deformation mechanisms in crystalline solids.

  2. Electron-hole diffusion lengths >175 μm in solution-grown CH3NH3PbI3 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dong, Qingfeng; Fang, Yanjun; Shao, Yuchuan; Mulligan, Padhraic; Qiu, Jie; Cao, Lei; Huang, Jinsong

    2015-02-27

    Long, balanced electron and hole diffusion lengths greater than 100 nanometers in the polycrystalline organolead trihalide compound CH3NH3PbI3 are critical for highly efficient perovskite solar cells. We found that the diffusion lengths in CH3NH3PbI3 single crystals grown by a solution-growth method can exceed 175 micrometers under 1 sun (100 mW cm–2) illumination and exceed 3 millimeters under weak light for both electrons and holes. The internal quantum efficiencies approach 100% in 3-millimeter-thick single-crystal perovskite solar cells under weak light. These long diffusion lengths result from greater carrier mobility, longer lifetime, and much smaller trap densities in the single crystals thanmore »in polycrystalline thin films. As a result, the long carrier diffusion lengths enabled the use of CH3NH3PbI3 in radiation sensing and energy harvesting through the gammavoltaic effect, with an efficiency of 3.9% measured with an intense cesium-137 source.« less

  3. Electron-hole diffusion lengths >175 μm in solution-grown CH3NH3PbI3 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dong, Qingfeng; Fang, Yanjun; Shao, Yuchuan; Mulligan, Padhraic; Qiu, Jie; Cao, Lei; Huang, Jinsong

    2015-02-27

    Long, balanced electron and hole diffusion lengths greater than 100 nanometers in the polycrystalline organolead trihalide compound CH3NH3PbI3 are critical for highly efficient perovskite solar cells. We found that the diffusion lengths in CH3NH3PbI3 single crystals grown by a solution-growth method can exceed 175 micrometers under 1 sun (100 mW cm–2) illumination and exceed 3 millimeters under weak light for both electrons and holes. The internal quantum efficiencies approach 100% in 3-millimeter-thick single-crystal perovskite solar cells under weak light. These long diffusion lengths result from greater carrier mobility, longer lifetime, and much smaller trap densities in the single crystals thanmore » in polycrystalline thin films. As a result, the long carrier diffusion lengths enabled the use of CH3NH3PbI3 in radiation sensing and energy harvesting through the gammavoltaic effect, with an efficiency of 3.9% measured with an intense cesium-137 source.« less

  4. System and method for liquid silicon containment (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The ...

  5. Development of large-area monolithically integrated Silicon-Film photovoltaic modules. Annual subcontract report, 16 November 1991--31 December 1992

    SciTech Connect (OSTI)

    Rand, J.A.; Cotter, J.E.; Ingram, A.E.; Ruffins, T.R.; Shreve, K.P.; Hall, R.B.; Barnett, A.M.

    1993-06-01

    This report describes work to develop Silicon-Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (< 100-{mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200-cm{sup 2}, 18%-efficient, monolithic array. The short-term objectives are to improve material quality and to fabricate 100 cm{sup 2} monolithically interconnected solar cell arrays. Low minority-carrier diffusion length in the silicon film and series resistance in the interconnected device structure are presently limiting device performance. Material quality is continually improving through reduced impurity contamination. Metallization schemes, such as a solder-dipped interconnection process, have been developed that will allow low-cost production processing and minimize R{sub s} effects. Test data for a nine-cell device (16 cm{sup 2}) indicated a V{sub oc} of 3.72 V. These first-reported monolithically interconnected multicrystalline silicon-on-ceramic devices show low shunt conductance (< 0.1 mA/cm{sup 2}) due to limited conduction through the ceramic and no process-related metallization shunts.

  6. SU-F-BRE-02: Characterization of a New Commercial Single Crystal Diamond Detector in Photon, Electron and Proton Beams

    SciTech Connect (OSTI)

    Akino, Y; Das, I

    2014-06-15

    Purpose: Diamond detectors even with superior characteristics have become obsolete due to poor design, selection of crystal and cost. Recently, microDiamond using synthetic single crystal diamond detector (SCDD) is commercially available which is characterized in various radiation beams in this study. Methods: The characteristics of a commercial SCDD model 60019 (PTW) to a 6- and 15-MV photon beams, 6- and 20-MeV electron beams, and 208 MeV proton beams were investigated and compared to the pre-characterized detectors: TN31010 (0.125 cm{sup 3}) and TN30006 (pinpoint) ionization chambers (PTW), EDGE detector (Sun Nuclear Corp), and SFD Stereotactic Dosimetry Diode Detector (IBA). The depth-dose and profiles data were collected for various field sizes and depths. The dose linearity and dose rate dependency were also evaluated. To evaluate the effects of the preirradiation, the diamond detector which had not been irradiated on the day was set up in the water tank and the response to 100 MU was measured every 20 s. The temperature dependency was tested for the range of 4–60 °C. Angular dependency was evaluated in water phantom by rotating the SCDD. Results: For all radiation types and field sizes, the depth-dose data of the diamond chamber showed identical curve to those of ionization chambers. The profile of the diamond detector was very similar to those of the Edge and SFD detectors, although the 0.125 cm{sup 3} and pinpoint chambers showed averaging effects in the penumbrae region. The temperature dependency was within 0.7% in the range of 4–41°C. A dose of 900 cGy and 1200 cGy were needed to stabilize the chamber to the level within 0.5% and 0.2%, respectively. Conclusion: The type 60019 SCDD detector showed suitable characteristics for depth-dose and profile measurements for wide range of field sizes. However, at least 1000 cGy of pre-irradiation is needed for accurate measurements.

  7. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOE Patents [OSTI]

    Vernon, Stanley M.

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  8. Powerful, Efficient Electric Vehicle Chargers: Low-Cost, Highly-Integrated Silicon Carbide (SiC) Multichip Power Modules (MCPMs) for Plug-In Hybrid Electric

    SciTech Connect (OSTI)

    2010-09-14

    ADEPT Project: Currently, charging the battery of an electric vehicle (EV) is a time-consuming process because chargers can only draw about as much power from the grid as a hair dryer. APEI is developing an EV charger that can draw as much power as a clothes dryer, which would drastically speed up charging time. APEI's charger uses silicon carbide (SiC)-based power transistors. These transistors control the electrical energy flowing through the charger's circuits more effectively and efficiently than traditional transistors made of straight silicon. The SiC-based transistors also require less cooling, enabling APEI to create EV chargers that are 10 times smaller than existing chargers.

  9. Method for fabricating transistors using crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, A.M.

    1997-09-02

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.

  10. Floating Silicon Method

    SciTech Connect (OSTI)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  11. In situ dehydration behavior of zeolite-like pentagonite: A single-crystal X-ray study

    SciTech Connect (OSTI)

    Danisi, Rosa Micaela; Armbruster, Thomas; Lazic, Biljana

    2013-01-15

    The structural modifications upon heating of pentagonite, Ca(VO)(Si{sub 4}O{sub 10}){center_dot}4H{sub 2}O (space group Ccm2{sub 1}, a=10.3708(2), b=14.0643(2), c=8.97810(10) A, V=1309.53(3) A{sup 3}) were investigated by in situ temperature dependent single-crystal X-ray structure refinements. Diffraction data of a sample from Poona district (India) have been measured in steps of 25 up to 250 Degree-Sign C and in steps of 50 Degree-Sign C between 250 and 400 Degree-Sign C. Pentagonite has a porous framework structure made up by layers of silicate tetrahedra connected by V{sup 4+}O{sub 5} square pyramids. Ca and H{sub 2}O molecules are extraframework occupants. Room temperature diffraction data allowed refinement of H positions. The hydrogen-bond system links the extraframework occupants to the silicate layers and also interconnects the H{sub 2}O molecules located inside the channels. Ca is seven-fold coordinated forming four bonds to O of the tetrahedral framework and three bonds to extraframework H{sub 2}O. The H{sub 2}O molecule at O9 showing a high displacement parameter is not bonded to Ca. The dehydration in pentagonite proceeds in three steps. At 100 Degree-Sign C the H{sub 2}O molecule at O8 was released while O9 moved towards Ca. As a consequence the displacement parameter of H{sub 2}O at O9 halved compared to that at room temperature. The unit-cell volume decreased to 1287.33(3) A{sup 3} leading to a formula with 3H{sub 2}O per formula unit (pfu). Ca remained seven-fold coordinated. At 175 Degree-Sign C Ca(VO)(Si{sub 4}O{sub 10}){center_dot}3H{sub 2}O transformed into a new phase with 1H{sub 2}O molecule pfu characterized by doubling of the c axis and the monoclinic space group Pn. Severe bending of specific T--O--T angles led to contraction of the porous three-dimensional framework. In addition, H{sub 2}O at O9 was expelled while H{sub 2}O at O7 approached a position in the center of the channel. The normalized volume decreased to 1069.44(9) A{sup 3}. The Ca coordination reduced from seven- to six-fold. At 225 Degree-Sign C a new anhydrous phase with space group Pna2{sub 1} but without doubling of c had formed. Release of H{sub 2}O at O7 caused additional contraction of T--O--T angles and volume reduction (V=1036.31(9) A{sup 3}). Ca adopted five-fold coordination. During heating excursion up to 400 Degree-Sign C this anhydrous phase remained preserved. Between room temperature and 225 Degree-Sign C the unit-cell volume decreased by 21% due to dehydration. The dehydration steps compare well with the thermo-gravimetric data reported in the literature. - Graphical abstract: Pentagonite structure at room temperature and at 225 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer We investigate the relationship between the removal of H{sub 2}O molecules and structural modifications of the framework of pentagonite. Black-Right-Pointing-Pointer Pentagonite undergoes phase transitions upon heating. Black-Right-Pointing-Pointer We analyze similarities and differences between pentagonite and related structures.

  12. Wanxiang Silicon Peak Electronics Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    silicon ingots and wafers and subsidiary of the Wanxiang Group which includes solar cell and module maker Wanxiang Solar. Coordinates: 29.140209, 118.405113 Show...

  13. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    SciTech Connect (OSTI)

    Ryu, H.; Lei, H.; Klobes, B.; Warren, J. B.; Hermann, R. P.; Petrovic, C.

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  14. Synthesis, spectral characterization, and single crystal structure studies of (2-nitro-ethene-1,1-diyl)-bis-((4-isopropyl-benzyl)sulfane)

    SciTech Connect (OSTI)

    Sakthikumar, L.; Mahalakshmy, R.; Bhargavi, G.; Srinivasan, N.

    2015-12-15

    The title compound (2-nitro-ethene-1,1-diyl)-bis-(4-isopropylbenzyl)sulfane) (5), was synthesised using a two step process. The structure of the product (5) was established by UV, FT-IR, {sup 1}H NMR, {sup 13}C NMR, C,H,N analysis, LC-MS and single crystal X-ray diffraction analysis. The single crystal of the title compound (5) was crystallized in Monoclinic with the space group of P21/c. The crystal exhibit the following unit cell parameters a = 12.8165(18), b = 6.1878(6), c = 27.082(4) Å, β = 90.705(17)°, V = 2147.6(5) A{sup 3}, Z = 4, D{sub x} = 1.242 Mg/m{sup 3} and the molecular formula of C{sub 22}H{sub 27}N{sub 1}O{sub 2}S{sub 2} was found. The final R value was 0.0776. The crystal structure is stabilized by an interesting intramolecular push and pull five membered electrocyclic interaction between the O1–N1–C2–C1–S1- and via the intermolecular H-bonding interaction between C2–H2···O2.

  15. A Successful Synthesis of the CoCrFeNiAl{sub 0.3} Single-Crystal, High-Entropy Alloy by Bridgman Solidification

    SciTech Connect (OSTI)

    Ma, S. G.; Zhang, S. F.; Gao, M. C.; Liaw, P. K.; Zhang, Y.

    2013-12-01

    For the first time, a face-centered-cubic, single-crystal CoCrFeNiAl{sub 0.3} (designated as Al0.3), high-entropy alloy (HEA) was successfully synthesized by the Bridgman solidification (BS) method, at an extremely low withdrawal velocity through a constant temperature gradient, for which it underwent two BS steps. Specially, at the first BS step, the alloy sample underwent several morphological transitions accompanying the crystal growth from the melt. This microstructure evolves from as-cast dendrites, to equiaxed grains, and then to columnar crystals, and last to the single crystal. In particular, at the equiaxed-grain region, some visible annealing twins were observed, which indicates a low stacking fault energy of the Al0.3 alloy. Although a body-centered- cubic CoCrFeNiAl (Al1) HEA was also prepared under the same conditions, only a single columnar-crystal structure with instinctively preferential crystallographic orientations was obtained by the same procedure. A similar morphological transition from dendrites to equiaxed grains occurred at the equiaxed-grain region in Al1 alloy, but the annealing twins were not observed probably because a higher Al addition leads to a higher stacking fault energy for this alloy.

  16. Epitaxial growth of fcc-Co{sub x}Ni{sub 100-x} thin films on MgO(110) single-crystal substrates

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-12-15

    Co{sub x}Ni{sub 100-x} (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co{sub x}Ni{sub 100-x} film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co{sub x}Ni{sub 100-x} films are in agreement within +-0.5% with the values of the respective bulk Co{sub x}Ni{sub 100-x} crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110){sub fcc} film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

  17. SunShot Initiative Workshop on Silicon Photovoltaics

    Broader source: Energy.gov [DOE]

    On July 29, 2015, the SunShot Initiative held a workshop on silicon photovoltaics research directions beyond 2020 in conjunction with the NREL workshop on crystalline silicon solar cells and modules. The purpose of this workshop was to discuss and survey the impactful research directions for silicon based photovoltiacs beyond the 2020 goal.

  18. Method for forming silicon on a glass substrate

    DOE Patents [OSTI]

    McCarthy, A.M.

    1995-03-07

    A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

  19. High field electron paramagnetic resonance spectroscopy under ultrahigh vacuum conditionsA multipurpose machine to study paramagnetic species on well defined single crystal surfaces

    SciTech Connect (OSTI)

    Rocker, J.; Cornu, D.; Kieseritzky, E.; Hnsel-Ziegler, W.; Freund, H.-J.; Seiler, A.; Bondarchuk, O.

    2014-08-01

    A new ultrahigh vacuum (UHV) electron paramagnetic resonance (EPR) spectrometer operating at 94 GHz to investigate paramagnetic centers on single crystal surfaces is described. It is particularly designed to study paramagnetic centers on well-defined model catalysts using epitaxial thin oxide films grown on metal single crystals. The EPR setup is based on a commercial Bruker E600 spectrometer, which is adapted to ultrahigh vacuum conditions using a home made Fabry Perot resonator. The key idea of the resonator is to use the planar metal single crystal required to grow the single crystalline oxide films as one of the mirrors of the resonator. EPR spectroscopy is solely sensitive to paramagnetic species, which are typically minority species in such a system. Hence, additional experimental characterization tools are required to allow for a comprehensive investigation of the surface. The apparatus includes a preparation chamber hosting equipment, which is required to prepare supported model catalysts. In addition, surface characterization tools such as low energy electron diffraction (LEED)/Auger spectroscopy, temperature programmed desorption (TPD), and infrared reflection absorption spectroscopy (IRAS) are available to characterize the surfaces. A second chamber used to perform EPR spectroscopy at 94 GHz has a room temperature scanning tunneling microscope attached to it, which allows for real space structural characterization. The heart of the UHV adaptation of the EPR experiment is the sealing of the Fabry-Perot resonator against atmosphere. To this end it is possible to use a thin sapphire window glued to the backside of the coupling orifice of the Fabry Perot resonator. With the help of a variety of stabilization measures reducing vibrations as well as thermal drift it is possible to accumulate data for a time span, which is for low temperature measurements only limited by the amount of liquid helium. Test measurements show that the system can detect paramagnetic species with a density of approximately 5 10{sup 11} spins/cm{sup 2}, which is comparable to the limit obtained for the presently available UHV-EPR spectrometer operating at 10 GHz (X-band). Investigation of electron trapped centers in MgO(001) films shows that the increased resolution offered by the experiments at W-band allows to identify new paramagnetic species, that cannot be differentiated with the currently available methodology.

  20. A study of the phase transition and magnetocaloric effect in multiferroic La{sub 2}MnNiO{sub 6} single crystals

    SciTech Connect (OSTI)

    Balli, M. Jandl, S.; Fournier, P.; Gospodinov, M. M.

    2014-05-07

    Magnetic and magnetocaloric properties of single crystal double perovskite La{sub 2}MnNiO{sub 6} have been investigated in details. Its ordered phase with a high Curie temperature (T{sub C} = 280 K) exhibits a significant refrigerant capacity around room temperature. A model based on the mean field theory approximation has been used in order to quantify the magnetic and magnetocaloric properties in the ordered La{sub 2}MnNiO{sub 6}. The magnetization and entropy changes were satisfactorily simulated as a function of temperature and magnetic field. On the other hand, the presence of cationic disorder in La{sub 2}MnNiO{sub 6} phases allows to shift the Curie point to low temperature without a significant change in the magnetocaloric performance.

  1. Station for X-ray structural analysis of materials and single crystals (including nanocrystals) on a synchrotron radiation beam from the wiggler at the Siberia-2 storage ring

    SciTech Connect (OSTI)

    Kheiker, D. M. Kovalchuk, M. V.; Korchuganov, V. N.; Shilin, Yu. N.; Shishkov, V. A.; Sulyanov, S. N.; Dorovatovskii, P. V.; Rubinsky, S. V.; Rusakov, A. A.

    2007-11-15

    The design of the station for structural analysis of polycrystalline materials and single crystals (including nanoobjects and macromolecular crystals) on a synchrotron radiation beam from the superconducting wiggler of the Siberia-2 storage ring is described. The wiggler is constructed at the Budker Institute of Nuclear Physics of the Siberian Division of the Russian Academy of Sciences. The X-ray optical scheme of the station involves a (1, -1) double-crystal monochromator with a fixed position of the monochromatic beam and a sagittal bending of the second crystal, segmented mirrors bent by piezoelectric motors, and a (2{theta}, {omega}, {phi}) three-circle goniometer with a fixed tilt angle. Almost all devices of the station are designed and fabricated at the Shubnikov Institute of Crystallography of the Russian Academy of Sciences. The Bruker APEX11 two-dimensional CCD detector will serve as a detector in the station.

  2. Structural state of a radiation-modified Ti{sub 50}Ni{sub 47}Fe{sub 3} single crystal

    SciTech Connect (OSTI)

    Parkhomenko, V. D. Dubinin, S. F.; Maksimov, V. I.

    2011-12-15

    The structural state of a Ti{sub 50}Ni{sub 47}Fe{sub 3} single crystal irradiated by fast neutrons (F = 2.5 Multiplication-Sign 10{sup 20} cm{sup -2}) at 340 K was studied by thermal neutron diffraction at 78 and 295 K. The melt of this composition was chosen with the purpose of designing a radiation-resistant material exhibiting a shape-memory effect. It was found that the melt remains crystalline after irradiation, whereas the Ti{sub 49}Ni{sub 51} crystal studied earlier becomes amorphous after an analogous irradiation. In spite of the fact that the main structural motif of the crystal remains unchanged after irradiation, martensitic transformations in the crystal do not occur and, consequently, the shape-memory effect is not retained. The radiation resistance of this class of crystals was estimated.

  3. Giant increase in critical current density of KxFe2-ySe? single crystals

    SciTech Connect (OSTI)

    Lei, Hechang; Petrovic, C.

    2011-12-28

    The critical current density Jabc of KxFe2-ySe? single crystals can be enhanced by more than one order of magnitude, up to ~2.110? A/cm by the post annealing and quenching technique. A scaling analysis reveals the universal behavior of the normalized pinning force as a function of the reduced field for all temperatures, indicating the presence of a single vortex pinning mechanism. The main pinning sources are three-dimensional (3D) point-like normal cores. The dominant vortex interaction with pinning centers is via spatial variations in critical temperature Tc (?Tc pinning).

  4. Suppression of the Critical Temperature of Superconducting NdFeAs(OF) Single Crystals by Kondo-Like Defect Sites Induced by {alpha}-Particle Irradiation

    SciTech Connect (OSTI)

    Tarantini, C.; Gurevich, A.; Larbalestier, D. C.; Putti, M.; Shen, Y.; Singh, R. K.; Rowell, J. M.; Newman, N.; Cheng Peng; Jia Ying; Wen Haihu

    2010-02-26

    We report the effect of {alpha}-particle irradiation on the reduction of the critical temperature T{sub c} of a NdFeAs(OF) single crystal. Our data indicate that irradiation defects cause both nonmagnetic and magnetic scattering, resulting in the Kondo-like excess resistance {Delta}{rho}(T)propor tolnT over 2 decades in temperatures above T{sub c}. The critical density of magnetic irradiation defects which suppresses T{sub c} is found to be much higher than those for cuprates and multiband BCS superconductors. We suggest that such anomalously weak pair breaking by irradiation defects indicates that magnetic scattering in pnictides is coupled with pairing interactions mediated by spin fluctuations.

  5. Single crystal plastic behavior of a single-phase, face-center-cubic-structured, equiatomic FeNiCrCo alloy

    SciTech Connect (OSTI)

    Wu, Zhenggang; Gao, Y. F.; Bei, Hongbin

    2015-07-25

    To understand the fundamental deformation mechanisms of compositionally complex alloys, single crystals of a multi-component equiatomic FeNiCoCr alloy with face-centered cubic (FCC) structure were grown for mechanical studies. Similarly to typical FCC pure metals, slip trace analyses indicate that dislocation slips take place on (1 1 1) planes along [110] directions. The critical resolved shear stress (CRSS) obeys the Schmid law at both 77 and 293 K, and tensioncompression asymmetry is not observed. Although this material slips in a normal FCC manner both at 293 and 77 K, compared to typical FCC metals the CRSSs strong temperature dependence is abnormal.

  6. Insulating and metallic spin glass in KxFe2-δ-yNiySe2 (0.06 ≤ y ≤ 1.44 ) single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Abeykoon, Milinda; Wang, Kefeng; Lei, Hechang; Lazarevic, N.; Warren, J. B.; Bozin, E. S.; Popovic, Z. V.; Petrovic, C.

    2015-05-04

    We report electron doping effects by Ni in KxFe2-δ-yNiySe₂ (0.06 ≤ y ≤ 1.44) single crystal alloys. A rich ground state phase diagram is observed. Thus, a small amount of Ni (~ 4%) suppressed superconductivity below 1.8 K, inducing insulating spin glass magnetic ground state for higher Ni content. With further Ni substitution, metallic resistivity is restored. For high Ni concentration in the lattice the unit cell symmetry is high symmetry I4/mmm with no phase separation whereas both I4/m + I4/mmm space groups were detected in the phase separated crystals when concentration of Ni < Fe. The absence of superconductivitymore » coincides with the absence of crystalline Fe vacancy order.« less

  7. Influence of Sn on the thermoelectric properties of (Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals

    SciTech Connect (OSTI)

    Kulbachinskii, V.A.; Kytin, V.G.; Kudryashov, A.A.; Lunin, R.A.

    2012-09-15

    The influence of tin on the thermoelectric properties of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. The temperature dependence of the Seebeck coefficient S, the electrical conductivity {sigma}, the heat conductivity k and the thermoelectric figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. By an increase the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The heat conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to the Sn doping, while the electrical conductivity {sigma} increases in the temperature interval about 200single crystals (x=0; 0.25; 0.5) has been investigated. Temperature dependence of Seebeck coefficient S, electrical conductivity {sigma}, thermal conductivity k and figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. Electrical conductivity increases in the temperature interval 150K

  8. Single crystal plastic behavior of a single-phase, face-center-cubic-structured, equiatomic FeNiCrCo alloy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, Zhenggang; Gao, Y. F.; Bei, Hongbin

    2015-07-25

    To understand the fundamental deformation mechanisms of compositionally complex alloys, single crystals of a multi-component equiatomic FeNiCoCr alloy with face-centered cubic (FCC) structure were grown for mechanical studies. Similarly to typical FCC pure metals, slip trace analyses indicate that dislocation slips take place on (1 1 1) planes along [11¯0] directions. The critical resolved shear stress (CRSS) obeys the Schmid law at both 77 and 293 K, and tension–compression asymmetry is not observed. Although this material slips in a normal FCC manner both at 293 and 77 K, compared to typical FCC metals the CRSS’s strong temperature dependence is abnormal.

  9. Formation mechanism of superconducting phase and its three-dimensional architecture in pseudo-single-crystal KxFe2-ySe2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Yong; Xing, Qingfeng; Straszheim, Warren E.; Marshman, Jeff; Pedersen, Pal; McLaughlin, Richard; Lograsso, Thomas A.

    2016-02-11

    Here, we report how the superconducting phase forms in pseudo-single-crystal KxFe2-ySe2. In situ scanning electron microscopy (SEM) observation reveals that, as an order-disorder transition occurs, on cooling, most of the high-temperature iron-vacancy-disordered phase gradually changes into the iron-vacancy-ordered phase whereas a small quantity of the high-temperature phase retains its structure and aggregates to the stripes with more iron concentration but less potassium concentration compared to the iron-vacancy-ordered phase. The stripes that are generally recognized as the superconducting phase are actually formed as a remnant of the high-temperature phase with a compositional change after an “imperfect” order-disorder transition. It should bemore » emphasized that the phase separation in pseudo-single-crystal KxFe2-ySe2 is caused by the iron-vacancy order-disorder transition. The shrinkage of the high-temperature phase and the expansion of the newly created iron-vacancy-ordered phase during the phase separation rule out the mechanism of spinodal decomposition proposed in an early report [Wang et al, Phys. Rev. B 91, 064513 (2015)]. Since the formation of the superconducting phase relies on the occurrence of the iron-vacancy order-disorder transition, it is impossible to synthesize a pure superconducting phase by a conventional solid state reaction or melt growth. By focused ion beam-scanning electron microscopy, we further demonstrate that the superconducting phase forms a contiguous three-dimensional architecture composed of parallelepipeds that have a coherent orientation relationship with the iron-vacancy-ordered phase.« less

  10. Bridgman Growth of Large SrI2:Eu2+ Single Crystals: A High-performance Scintillator for Radiation Detection Applications

    SciTech Connect (OSTI)

    Boatner, Lynn A; Ramey, Joanne Oxendine; Kolopus, James A; Hawrami, Rastgo; Higgins, William; Van Loef, Edgar; Glodo, J.; Shah, Kanai; Bhattacharya, P.; Tupitsyn, E; Groza, Michael; Burger, Arnold

    2013-01-01

    Single-crystal strontium iodide (SrI2) doped with relatively high levels (e.g., 3 - 6 %) of Eu2+ exhibits characteristics that make this material superior, in a number of respects, to other scintillators that are currently used for radiation detection. Specifically, SrI2:Eu2+ has a light yield that is significantly higher than LaBr3:Ce3+ -a currently employed commercial high-performance scintillator. Additionally, SrI2:Eu2+ is characterized by an energy resolution as high as 2.6% at the 137Cs gamma-ray energy of 662 keV, and there is no radioactive component in SrI2:Eu2+ - unlike LaBr3:Ce3+ that contains 138La. The Ce3+-doped LaBr3 decay time is, however, faster (30 nsec) than the 1.2 sec decay time of SrI2:Eu2+. Due to the relatively low melting point of strontium iodide (~515 oC), crystal growth can be carried out in quartz crucibles by the vertical Bridgman technique. Materials-processing and crystal-growth techniques that are specific to the Bridgman growth of europium-doped strontium iodide scintillators are described here. These techniques include the use of a porous quartz frit to physically filter the molten salt from a quartz antechamber into the Bridgman growth crucible and the use of a bent or bulb grain selector design to suppress multiple grain growth. Single crystals of SrI2:Eu2+ scintillators with good optical quality and scintillation characteristics have been grown in sizes up to 5.0 cm in diameter by applying these techniques. Other aspects of the SrI2:Eu2+ crystal-growth methods and of the still unresolved crystal-growth issues are described here.

  11. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    SciTech Connect (OSTI)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450?C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18??m long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  12. Expanding Lorentz and spectrum corrections to large volumes of reciprocal space, for single crystal TOF neutron diffraction

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Michels-Clark, Tara M; Savici, Andrei T; Lynch, Vickie E; Hoffmann, Christina; Wang, Xiaoping

    2016-01-01

    Evidence is mounting that potentially exploitable properties of technologically and chemically interesting crystalline materials are often attributed to local structure effects, which can be observed as modulated diffuse scattering (mDS) next to Bragg diffraction (BD). BD forms a regular, sparse grid of discrete points in diffraction space; traditionally, the information in each Bragg peak is extracted first by integration, followed by the application of the required corrections. In contrast, mDS covers expansive volumes of reciprocal space close to, or between, Bragg reflections. For a full measurement of the diffuse scattering, multiple instrument configurations might be required, and the same pointmore » might be measured multiple times. The common integration method is not sufficient and a new, inclusive correction-plus-intensity-extraction method is in demand. In this contribution we introduce a comprehensive data analysis approach to correct and scale the full volume of scattering data in one step. Hence, we explore data treatment and data correction that includes the complete, collected reciprocal space simultaneously, using neutron time of flight (TOF) or wavelength-resolved data, collected at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory.« less

  13. Silicon nitride/silicon carbide composite powders

    DOE Patents [OSTI]

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  14. Search for WW and WZ production in lepton, neutrino plus jets final states at CDF Run II and Silicon module production and detector control system for the ATLAS SemiConductor Tracker

    SciTech Connect (OSTI)

    Sfyrla, Anna; /Geneva U.

    2008-03-01

    In the first part of this work, we present a search for WW and WZ production in charged lepton, neutrino plus jets final states produced in p{bar p} collisions with {radical}s = 1.96 TeV at the Fermilab Tevatron, using 1.2 fb{sup -1} of data accumulated with the CDF II detector. This channel is yet to be observed in hadron colliders due to the large singleWplus jets background. However, this decay mode has a much larger branching fraction than the cleaner fully leptonic mode making it more sensitive to anomalous triple gauge couplings that manifest themselves at higher transverse W momentum. Because the final state is topologically similar to associated production of a Higgs boson with a W, the techniques developed in this analysis are also applicable in that search. An Artificial Neural Network has been used for the event selection optimization. The theoretical prediction for the cross section is {sigma}{sub WW/WZ}{sup theory} x Br(W {yields} {ell}{nu}; W/Z {yields} jj) = 2.09 {+-} 0.14 pb. They measured N{sub Signal} = 410 {+-} 212(stat) {+-} 102(sys) signal events that correspond to a cross section {sigma}{sub WW/WZ} x Br(W {yields} {ell}{nu}; W/Z {yields} jj) = 1.47 {+-} 0.77(stat) {+-} 0.38(sys) pb. The 95% CL upper limit to the cross section is estimated to be {sigma} x Br(W {yields} {ell}{nu}; W/Z {yields} jj) < 2.88 pb. The second part of the present work is technical and concerns the ATLAS SemiConductor Tracker (SCT) assembly phase. Although technical, the work in the SCT assembly phase is of prime importance for the good performance of the detector during data taking. The production at the University of Geneva of approximately one third of the silicon microstrip end-cap modules is presented. This collaborative effort of the university of Geneva group that lasted two years, resulted in 655 produced modules, 97% of which were good modules, constructed within the mechanical and electrical specifications and delivered in the SCT collaboration for assembly on the end-cap disks. The SCT end-caps and barrels consist of 4088 silicon modules, with a total of 6.3 million readout channels. The coherent and safe operation of the SCT during commissioning and subsequent operation is the essential task of the Detector Control System (DCS). The main building blocks of the DCS are the cooling system, the power supplies and the environmental system. The DCS has been initially developed for the SCT assembly phase and this system is described in the present work. Particular emphasis is given in the environmental hardware and software components, that were my major contributions. Results from the DCS testing during the assembly phase are also reported.

  15. Structurally-driven metal-insulator transition in Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} (0{<=}x<0.14): A single crystal X-ray diffraction study

    SciTech Connect (OSTI)

    Qi, T.F.; Ge, M.; Korneta, O.B.; Parkin, S.; De Long, L.E.; Cao, G.

    2011-04-15

    Correlation between structure and transport properties are investigated in high-quality single-crystals of Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} with 0single crystal X-ray diffraction and by electronic studies. The parent compound was known to exhibit an intriguing first-order structurally driven metal-insulator (MI) transition at 357 K. Upon chromium doping on the ruthenium site, the metal-insulator transition temperature (T{sub MI}) was drastically reduced, and is related to the competition between structural changes that occur upon Cr doping and with decreasing temperature. A strong suppression of structural distortions with increasing Cr substitution was identified. No clear T{sub MI} can be observed when x>13.5% and the system behaves as an insulator. Such a large, sharp metal-insulator transition and tuneable transition temperature may have potential applications in electronic devices. -- Graphical abstract: The metal-insulator transition temperature (T{sub MI}) was drastically reduced by Cr doping, and is closely related to the distortion of structure. Display Omitted Research highlights: {yields} The metal-insulator transition temperature (T{sub MI}) was drastically reduced by doping Cr into Ca{sub 2}RuO{sub 4} single crystal. {yields} Detailed single crystal structural analysis provided important insight into this structurally-driven metal-insulator transition. {yields} Negative Volume Thermal Expansion (NVTE) was observed with increasing temperature.

  16. Nonlinear-optical and structural properties of nanocrystalline silicon carbide films

    SciTech Connect (OSTI)

    Brodyn, M. S.; Volkov, V. I. Lyakhovetskii, V. R.; Rudenko, V. I.; Puzilkov, V. M.; Semenov, A. V.

    2012-02-15

    The aim of this study is to investigate the nonlinearity of refraction in nanostructured silicon carbide films depending on their structural features (synthesis conditions for such films, substrate temperature during their deposition, concentration of the crystalline phase in the film, Si/C ratio of atomic concentrations in the film, and size of SiC nanocrystals formed in the film). The corresponding dependences are obtained, as well as the values of nonlinear-optical third-order susceptibility {chi}{sup (3)}({omega}; {omega}, -{omega}, {omega}) for various silicon polytypes (3C, 21R, and 27R) which exceed the value of {chi}{sup (3)} in bulk silicon carbide single crystals by four orders of magnitude.

  17. Seventh workshop on the role of impurities and defects in silicon device processing

    SciTech Connect (OSTI)

    1997-08-01

    This workshop is the latest in a series which has looked at technological issues related to the commercial development and success of silicon based photovoltaic (PV) modules. PV modules based on silicon are the most common at present, but face pressure from other technologies in terms of cell performance and cell cost. This workshop addresses a problem which is a factor in the production costs of silicon based PV modules.

  18. Hydrogenation of the alpha,beta-Unsaturated Aldehydes Acrolein, Crotonaldehyde, and Prenal over Pt Single Crystals: A Kinetic and Sum-Frequency Generation Vibrational Spectroscopy Study

    SciTech Connect (OSTI)

    Kliewer, C.J.; Somorjai, G.A.

    2008-11-26

    Sum-frequency generation vibrational spectroscopy (SFG-VS) and kinetic measurements using gas chromatography have been used to study the surface reaction intermediates during the hydrogenation of three {alpha},{beta}-unsaturated aldehydes, acrolein, crotonaldehyde, and prenal, over Pt(111) at Torr pressures (1 Torr aldehyde, 100 Torr hydrogen) in the temperature range of 295K to 415K. SFG-VS data showed that acrolein has mixed adsorption species of {eta}{sub 2}-di-{sigma}(CC)-trans, {eta}{sub 2}-di-{sigma}(CC)-cis as well as highly coordinated {eta}{sub 3} or {eta}{sub 4} species. Crotonaldehyde adsorbed to Pt(111) as {eta}{sub 2} surface intermediates. SFG-VS during prenal hydrogenation also suggested the presence of the {eta}{sub 2} adsorption species, and became more highly coordinated as the temperature was raised to 415K, in agreement with its enhanced C=O hydrogenation. The effect of catalyst surface structure was clarified by carrying out the hydrogenation of crotonaldehyde over both Pt(111) and Pt(100) single crystals while acquiring the SFG-VS spectra in situ. Both the kinetics and SFG-VS showed little structure sensitivity. Pt(100) generated more decarbonylation 'cracking' product while Pt(111) had a higher selectivity for the formation of the desired unsaturated alcohol, crotylalcohol.

  19. Transition to collapsed tetragonal phase in CaFe2As2 single crystals as seen by 57Fe Mössbauer spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bud'ko, Sergey L.; Ma, Xiaoming; Tomić, Milan; Ran, Sheng; Valentí, Roser; Canfield, Paul C.

    2016-01-21

    Temperature dependent measurements of 57Fe Mössbauer spectra on CaFe2As2 single crystals in the tetragonal and collapsed tetragonal phases are reported. Clear features in the temperature dependencies of the isomer shift, relative spectra area, and quadrupole splitting are observed at the transition from the tetragonal to the collapsed tetragonal phase. From the temperature dependent isomer shift and spectral area data, an average stiffening of the phonon modes in the collapsed tetragonal phase is inferred. The quadrupole splitting increases by ~25% on cooling from room temperature to ~100 K in the tetragonal phase and is only weakly temperature dependent at low temperaturesmore » in the collapsed tetragonal phase, in agreement with the anisotropic thermal expansion in this material. In order to gain microscopic insight about these measurements, we perform ab initio density functional theory calculations of the electric field gradient and the electron density of CaFe2As2 in both phases. By comparing the experimental data with the calculations we are able to fully characterize the crystal structure of the samples in the collapsed-tetragonal phase through determination of the As z coordinate. Furthermore, based on the obtained temperature dependent structural data we are able to propose charge saturation of the Fe-As bond region as the mechanism behind the stabilization of the collapsed-tetragonal phase at ambient pressure.« less

  20. Boost the electron mobility of solution-grown organic single crystals via reducing the amount of polar solvent residues

    SciTech Connect (OSTI)

    Xue, Guobiao; Xin, Huolin L.; Wu, Jiake; Fan, Congcheng; Liu, Shuang; Huang, Zhuoting; Liu, Yujing; Shan, Bowen; Miao, Qian; Chen, Hongzheng; Li, Hanying

    2015-10-29

    Enhancing electron transport to match with the development in hole transport is critical for organic electronics in the future. As electron motion is susceptible to extrinsic factors, seeking these factors and avoiding their negative effects have become the central challenge. Here, the existence of polar solvent residues in solution-grown single-crystals of 6,13-bis(triisopropylsilylethynyl)-5,7,12,14-tetraazapentacene is identified as a factor detrimental to electron motion. Field-effect transistors of the crystals exhibit electron mobility boosted by about 60% after the residues are removed. The average electron mobility reaches up to 8.0 ± 2.2 cm2 V–1 s–1 with a highest value of 13.3 cm2 V–1 s–1; these results are significantly higher than those obtained previously for the same molecule (1.0–5.0 cm2 V–1 s–1). Furthermore, the achieved mobility is also higher than the maximum reported electron mobility for organic materials (11 cm2 V–1 s–1). As a result, this work should greatly accelerate the advancement of organic electron-transporting materials.

  1. Experimental determination of single-crystal halite thermal conductivity, diffusivity and specific heat from -75°C to 300°C

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Urquhart, Alexander; Bauer, Stephen

    2015-05-19

    The thermal properties of halite have broad practical importance, from design and long-term modeling of nuclear waste repositories to analysis and performance assessment of underground natural gas, petroleum and air storage facilities. Using a computer-controlled transient plane source method, single-crystal halite thermal conductivity, thermal diffusivity and specific heat were measured from -75°C to 300°C. These measurements reproduce historical high-temperature experiments and extend the lower temperature extreme into cryogenic conditions. Measurements were taken in 25-degree increments from -75°C to 300°C. Over this temperature range, thermal conductivity decreases by a factor of 3.7, from 9.975 to 2.699 W/mK , and thermal diffusivitymore » decreases by a factor of 3.6, from 5.032 to 1.396 mm²/s. Specific heat does not appear to be temperature dependent, remaining near 2.0 MJ/m³K at all temperatures. This work is intended to develop and expand the existing dataset of halite thermal properties, which are of particular value in defining the parameters of salt storage thermophysical models. The work was motivated by a need for thermal conductivity values in a mixture theory model used to determine bulk thermal conductivity of reconsolidating crushed salt.« less

  2. Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shen, Xuan; Yamada, Tomoaki; Lin, Ruoqian; Kamo, Takafumi; Funakubo, Hiroshi; Wu, Di; Xin, Huolin L.; Su, Dong

    2015-10-08

    In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO3 films grown on (111)-oriented SrTiO3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a<110> comprised of a misfit dislocation along <112>, and threading dislocations along <110> or <100>. The misfit dislocation with Burgers vector of a <110> can dissociate into two ½ a <110> partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrievedmore » the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba0.7Sr0.3)TiO3 films.« less

  3. Intermolecular effects on the radiogenic formation of electron-capture phosphorus-centered radicals. A single-crystal ESR study of diastereoisomeric precursors

    SciTech Connect (OSTI)

    Aagaard, O.M.; Janssen, R.A.J.; de Waal, B.F.M.; Buck, H.M. )

    1990-01-31

    ESR experiments on X-irradiated single crystals of the 2R,4S,5R and 2S,4S,5R diastereoisomers of 2-chloro-3,4-dimethyl-5-phenyl-1,3,2-oxazaphospholidine 2-sulfide reveal that the yield of radiogenic electron-capture reactions in the solid state strongly depends on intermolecular interactions in the crystal. In the present case a high yield of P-Cl three-electron-bond phosphoranyl radical anions is found in crystals of the 2R,4S,5R isomer, whereas no radical formation can be detected for the 2S,4S,5R isomer. An analysis of nonbonded interactions with neighboring molecules reveals that the geometry relaxation necessary for the radical stabilization is easily accommodated in crystals of the 2R,4S,SR isomer but not in the 2S,4S,5R isomer, explaining the observed difference in electron-capture efficiency. Experiments on radical formation in a MeTHF host matrix give further insight into the importance of the environment on radiogenic radical formation. The possible concurrent effect of the matrix on the electronic configuration and spin density distribution of the resulting phosphoranyl radical is discussed.

  4. Octahedral distortion induced magnetic anomalies in LaMn{sub 0.5}Co{sub 0.5}O{sub 3} single crystals

    SciTech Connect (OSTI)

    Manna, Kaustuv Elizabeth, Suja; Anil Kumar, P. S.; Bhadram, Venkata Srinu; Narayana, Chandrabhas

    2014-07-28

    Single crystals of LaMn{sub 0.5}Co{sub 0.5}O{sub 3} belonging to the ferromagnetic-insulator and distorted perovskite class were grown using a four-mirror optical float zone furnace. The as-grown crystal crystallizes into an orthorhombic Pbnm structure. The spatially resolved 2D Raman scan reveals a strain-induced distribution of transition metal (TM)oxygen (O) octahedral deformation in the as-grown crystal. A rigorous annealing process releases the strain, thereby generating homogeneous octahedral distortion. The octahedra tilt by reducing the bond angle TM-O-TM, resulting in a decline of the exchange energy in the annealed crystal. The critical behavior is investigated from the bulk magnetization. It is found that the ground state magnetic behavior assigned to the strain-free LaMn{sub 0.5}Co{sub 0.5}O{sub 3} crystal is of the 3D Heisenberg kind. Strain induces mean field-like interaction in some sites, and consequently, the critical exponents deviate from the 3D Heisenberg class in the as-grown crystal. The temperature-dependent Raman scattering study reveals strong spin-phonon coupling and the existence of two magnetic ground states in the same crystal.

  5. Experimental determination of single-crystal halite thermal conductivity, diffusivity and specific heat from -75°C to 300°C

    SciTech Connect (OSTI)

    Urquhart, Alexander; Bauer, Stephen

    2015-05-19

    The thermal properties of halite have broad practical importance, from design and long-term modeling of nuclear waste repositories to analysis and performance assessment of underground natural gas, petroleum and air storage facilities. Using a computer-controlled transient plane source method, single-crystal halite thermal conductivity, thermal diffusivity and specific heat were measured from -75°C to 300°C. These measurements reproduce historical high-temperature experiments and extend the lower temperature extreme into cryogenic conditions. Measurements were taken in 25-degree increments from -75°C to 300°C. Over this temperature range, thermal conductivity decreases by a factor of 3.7, from 9.975 to 2.699 W/mK , and thermal diffusivity decreases by a factor of 3.6, from 5.032 to 1.396 mm²/s. Specific heat does not appear to be temperature dependent, remaining near 2.0 MJ/m³K at all temperatures. This work is intended to develop and expand the existing dataset of halite thermal properties, which are of particular value in defining the parameters of salt storage thermophysical models. The work was motivated by a need for thermal conductivity values in a mixture theory model used to determine bulk thermal conductivity of reconsolidating crushed salt.

  6. Optical and magneto-optical properties of single crystals of RFe{sub 2} (R = Gd, Tb, Ho, and Lu) and GdCo{sub 2} intermetallic compounds

    SciTech Connect (OSTI)

    Lee, S.J.

    1999-02-12

    The author has studied the diagonal and off-diagonal optical conductivity of RFe{sub 2}(R = Gd, Tb, Ho, Lu) and GdCo{sub 2} single crystals grown by the flux method. Using spectroscopic ellipsometry the author has measured the dielectric function from 1.5 to 5.5 eV. The magneto-optical Kerr spectrometer at temperatures between 7 and 295 K and applied magnetic fields between 0.5 to 1.6 T. The apparatus and calibration method are described in detail. Using magneto-optical data and optical constants he derives the experimental value of the off-diagonal conductivity components. Theoretical calculations of optical conductivities and magneto-optical parameters were performed using the tight binding-linear muffin tin orbitals method within the local spin density approximation. He applied this TB-LMTO method to LuFe{sub 2}. The theoretical results obtained agree well with the experimental data. The oxidation effects on the diagonal part of the optical conductivity were considered using a three-phase model. The oxidation effects on the magneto-optical parameters were also considered by treating the oxide layer as a nonmagnetic thin transparent layer. These corrections change not only the magnitude but also the shape of the optical conductivity and the magneto-optical parameters.

  7. Multiphoton photoluminescence contrast in switched Mg:LiNbO{sub 3} and Mg:LiTaO{sub 3} single crystals

    SciTech Connect (OSTI)

    Reichenbach, P., E-mail: philipp.reichenbach@iapp.de; Kmpfe, T.; Thiessen, A.; Haumann, A.; Eng, L. M. [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Str. 1, 01069 Dresden (Germany); Woike, T. [Institut fr Strukturphysik, Technische Universitt Dresden, Zellescher Weg 16, 01069 Dresden (Germany)

    2014-09-22

    We observed a multiphoton luminescence contrast between virgin and single-switched domains in Mg-doped LiNbO{sub 3} (LNO) and LiTaO{sub 3} (LTO) single crystals with different doping levels of 07?mol. % and 08?mol. %, respectively. A luminescence contrast in the range of 3% was measured between as-grown and electrically inverted domain areas in Mg:LNO samples, while the contrast reaches values of up to 30% for the Mg:LTO case. Under annealing, an exponential decay of the domain contrast was observed. The activation energy of about 1?eV being determined for the decay allowed a comparison with reported activation energies of associated defects, clearly illustrating a strong connection between thermal contrast decay and the H{sup +} and Li{sup +}-ion mobility. Finally, performing similar experiments on oxidized samples undoubtedly demonstrated that the origin of the reported luminescence contrast is strongly connected with lithium ions.

  8. Reciprocal space analysis of the microstructure of luminescent and nonluminescent porous silicon films

    SciTech Connect (OSTI)

    Lee, S.R.; Barbour, J.C.; Medernach, J.W.; Stevenson, J.O.; Custer, J.S.

    1994-12-31

    The microstructure of anodically prepared porous silicon films was determined using a novel X-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive X- ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p{sup {minus}} porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n{sup +} and p{sup +} porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure.

  9. Micro benchtop optics by bulk silicon micromachining

    DOE Patents [OSTI]

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  10. Upper critical fields and thermally-activated transport of Nd(0.7Fe0.3) FeAs single crystal

    SciTech Connect (OSTI)

    Balakirev, Fedor F; Jaroszynski, J; Hunte, F; Balicas, L; Jo, Youn - Jung; Raicevic, I; Gurevich, A; Larbalestier, D C; Fang, L; Cheng, P; Jia, Y; Wen, H H

    2008-01-01

    We present measurements of the resistivity and the upper critical field H{sub c2} of Nd(O{sub 0.7}F{sub 0.3})FeAs single crystals in strong DC and pulsed magnetic fields up to 45 T and 60 T, respectively. We found that the field scale of H{sub c2} is comparable to {approx}100 T of high T{sub c} cuprates. H{sub c2}(T) parallel to the c-axis exhibits a pronounced upward curvature similar to what was extracted from earlier measurements on polycrystalline samples. Thus this behavior is indeed an intrinsic feature of oxypnictides, rather than manifestation of vortex lattice melting or granularity. The orientational dependence of H{sub c2} shows deviations from the one-band Ginzburg-Landau scaling. The mass anisotropy decreases as T decreases, from 9.2 at 44K to 5 at 34K. Spin dependent magnetoresistance and nonlinearities in the Hall coefficient suggest contribution to the conductivity from electron-electron interactions modified by disorder reminiscent that of diluted magnetic semiconductors. The Ohmic resistivity measured below T{sub c} but above the irreversibility field exhibits a clear Arrhenius thermally activated behavior over 4--5 decades. The activation energy has very different field dependencies for H{parallel}ab and H{perpendicular}ab. We discuss to what extent different pairing scenarios can manifest themselves in the observed behavior of H{sub c2}, using the two-band model of superconductivity. The results indicate the importance of paramagnetic effects on H{sub c2}(T), which may significantly reduce H{sub c2}(0) as compared to H{sub c2}(0) {approx}200--300 T based on extrapolations of H{sub c2}(T) near T{sub c} down to low temperatures.

  11. Quantum Critical Behavior in the Heavy Fermion Single Crystal Ce(Ni0.935Pd0.065)2Ge2

    SciTech Connect (OSTI)

    Wang, Cuihuan [ORNL; Lawrence, J M [University of California, Irvine; Christianson, Andrew D [ORNL; Chang, S [NIST Center for Neutron Research (NCRN), Gaithersburg, MD; Bauer, E D [Los Alamos National Laboratory (LANL); Gofryk, K [Los Alamos National Laboratory (LANL); Ronning, F [Los Alamos National Laboratory (LANL); Thompson, J D [Los Alamos National Laboratory (LANL); McClellan, K J [Los Alamos National Laboratory (LANL); Rodriguez-Rivera, J A [NCNR and University of Maryland; Lynn, J W [NIST Center for Neutron Research (NCRN), Gaithersburg, MD

    2011-01-01

    We have performed magnetic susceptibility, specific heat, resistivity, and inelastic neutron scattering measurements on a single crystal of the heavy Fermion compound Ce(Ni{sub 0.935}Pd{sup 0.065}){sub 2}Ge{sub 2}, which is believed to be close to a quantum critical point (QCP) at T = 0. At lowest temperature (1.8--3.5 K), the magnetic susceptibility behaves as {chi}(T)-{chi} (0) {proportional_to} T{sup -1/6} with {chi} (0) = 0.032 x 10{sup -6} m{sup 3}/mole (0.0025 emu/mole). For T < 1 K, the specific heat can be fit to the formula {Delta} C/T = {gamma}{sub 0} - T{sup 1/2} with {gamma}{sub 0} of order 700 mJ/mole-K{sup 2}. The resistivity behaves as {rho} = {rho}{sub 0} + AT{sup 3/2} for temperatures below 2 K. This low temperature behavior for {gamma} (T) and {rho} (T) is in accord with the SCR theory of Moriya and Takimoto. The inelastic neutron scattering spectra show a broad peak near 1.5 meV that appears to be independent of Q; we interpret this as Kondo scattering with T{sub K} = 17 K. In addition, the scattering is enhanced near Q=(1/2, 1/2, 0) with maximum scattering at {Delta} E = 0.45 meV{sup -}; we interpret this as scattering from antiferromagnetic fluctuations near the antiferromagnetic QCP.

  12. Erratum: Evolution of precipitate morphology during heat treatment and its implications for the superconductivity in KxFe1.6+ySe2 single crystals [Phys. Rev. B 86 , 144507 (2012)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Y.; Xing, Q.; Dennis, K. W.; McCallum, R. W.; Lograsso, T. A.

    2015-08-14

    In this article, we study the relationship between precipitate morphology and superconductivity in KxFe1.6+ySe2 single crystals grown by self-flux method. Scanning electron microscopy (SEM) measurements revealed that the superconducting phase forms a network in the samples quenched above iron vacancy order-disorder transition temperature Ts, whereas it aggregates into micrometer-sized rectangular bars and aligns as disconnected chains in the furnace-cooled samples.

  13. Resolution of the discrepancy between the variation of the physical properties of Ce1-xYbxCoIn5 single crystals and thin films with Yb composition

    SciTech Connect (OSTI)

    Jang, S.; White, B. D.; Lum, I. K.; Kim, H.; Tanatar, M. A.; Straszheim, W. E.; Prozorov, R.; Keiber, T.; Bridges, F.; Shu, L.; Baumbach, R. E.; Janoschek, M.; Maple, M. B.

    2014-11-18

    The extraordinary electronic phenomena including an Yb valence transition, a change in Fermi surface topology, and suppression of the heavy fermion quantum critical field at a nominal concentration x≈0.2 have been found in the Ce1-xYbxCoIn5 system. These phenomena have no discernable effect on the unconventional superconductivity and normal-state non-Fermi liquid behaviour that occur over a broad range of x up to ~0.8. However, the variation of the coherence temperature T* and the superconducting critical temperature Tc with nominal Yb concentration x for bulk single crystals is much weaker than that of thin films. To determine whether differences in the actual Yb concentration of bulk single crystals and thin film samples might be responsible for these discrepancies, we employed Vegard’s law and the spectroscopically determined values of the valences of Ce and Yb as a function of x to determine the actual composition xact of bulk single crystals. This analysis is supported by energy-dispersive X-ray spectroscopy, wavelength-dispersive X-ray spectroscopy, and transmission X-ray absorption edge spectroscopy measurements. The actual composition xact is found to be about one-third of the nominal concentration x up to x~0.5, and resolves the discrepancy between the variation of the physical properties of Ce1-xYbxCoIn5 single crystals and thin films with Yb concentration.

  14. Electron-hole diffusion lengths >175 μm in solution-grown CH3NH3PbI3 single crystals

    SciTech Connect (OSTI)

    Dong, Qingfeng; Fang, Yanjun; Shao, Yuchuan; Mulligan, Padhraic; Qiu, Jie; Cao, Lei; Huang, Jinsong

    2015-02-27

    Long, balanced electron and hole diffusion lengths greater than 100 nanometers in the polycrystalline organolead trihalide compound CH3NH3PbI3 are critical for highly efficient perovskite solar cells. We found that the diffusion lengths in CH3NH3PbI3 single crystals grown by a solution-growth method can exceed 175 micrometers under 1 sun (100 mW cm–2) illumination and exceed 3 millimeters under weak light for both electrons and holes. The internal quantum efficiencies approach 100% in 3-millimeter-thick single-crystal perovskite solar cells under weak light. These long diffusion lengths result from greater carrier mobility, longer lifetime, and much smaller trap densities in the single crystals than in polycrystalline thin films. As a result, the long carrier diffusion lengths enabled the use of CH3NH3PbI3 in radiation sensing and energy harvesting through the gammavoltaic effect, with an efficiency of 3.9% measured with an intense cesium-137 source.

  15. Crystallographic, electronic, thermal, and magnetic properties of single-crystal SrCo2As2

    SciTech Connect (OSTI)

    Pandey, Abhishek; Quirinale, D. G.; Jayasekara, W.; Sapkota, A.; Kim, M. G.; Dhaka, R. S.; Lee, Y.; Heitmann, T. W.; Stephens, P. W.; Ogloblichev, V.; Kreyssig, A.; McQueeney, R. J.; Goldman, A. I.; Kaminski, Adam; Harmon, B. N.; Furukawa, Y.; Johnston, D. C.

    2013-07-01

    In tetragonal SrCo2As2 single crystals, inelastic neutron scattering measurements demonstrated that strong stripe-type antiferromagnetic (AFM) correlations occur at a temperature T = 5 K [W. Jayasekara et al., arXiv:1306.5174] that are the same as in the isostructural AFe2As2 (A = Ca, Sr, Ba) parent compounds of high-Tc superconductors. This surprising discovery suggests that SrCo2As2 may also be a good parent compound for high-Tc superconductivity. Here, structural and thermal expansion, electrical resistivity ?, angle-resolved photoemission spectroscopy (ARPES), heat capacity Cp, magnetic susceptibility ?, 75As NMR and neutron diffraction measurements of SrCo2As2 crystals are reported together with LDA band structure calculations that shed further light on this fascinating material. The c-axis thermal expansion coefficient ?c is negative from 7 to 300 K, whereas ?a is positive over this T range. The ?(T) shows metallic character. The ARPES measurements and band theory confirm the metallic character and in addition show the presence of a flat band near the Fermi energy EF. The band calculations exhibit an extremely sharp peak in the density of states D(EF) arising from a flat dx2-y2 band. A comparison of the Sommerfeld coefficient of the electronic specific heat with ?(T ? 0) suggests the presence of strong ferromagnetic itinerant spin correlations which on the basis of the Stoner criterion predicts that SrCo2As2 should be an itinerant ferromagnet, in conflict with the magnetization data. The ?(T) does have a large magnitude, but also exhibits a broad maximum at 115 K suggestive of dynamic short-range AFM spin correlations, in agreement with the neutron scattering data. The measurements show no evidence for any type of phase transition between 1.3 and 300 K and we propose that metallic SrCo2As2 has a gapless quantum spin-liquid ground state.

  16. Purified silicon production system

    DOE Patents [OSTI]

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  17. Advances in amorphous silicon photovoltaic technology

    SciTech Connect (OSTI)

    Carlson, D.E.; Rajan, K.; Arya, R.R.; Willing, F.; Yang, L.

    1998-10-01

    With the advent of new multijunction thin film solar cells, amorphous silicon photovoltaic technology is undergoing a commercial revival with about 30 megawatts of annual capacity coming on-line in the next year. These new {ital a}{endash}Si multijunction modules should exhibit stabilized conversion efficiencies on the order of 8{percent}, and efficiencies over 10{percent} may be obtained in the next several years. The improved performance results from the development of amorphous and microcrystalline silicon alloy films with improved optoelectronic properties and from the development of more efficient device structures. Moreover, the manufacturing costs for these multijunction modules using the new large-scale plants should be on the order of {dollar_sign}1 per peak watt. These new modules may find widespread use in solar farms, photovoltaic roofing, as well as in traditional remote applications. {copyright} {ital 1998 Materials Research Society.}

  18. Symmetry of piezoelectric (1–x)Pb(Mg1/3Nb2/3)O₃-xPbTiO₃ (x=0.31) single crystal at different length scales in the morphotropic phase boundary region

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, Kyou-Hyun; Payne, David A.; Zuo, Jian-Min

    2012-11-29

    We use probes of three different length scales to examine symmetry of (1–x)Pb(Mg1/3Nb2/3)O₃-xPbTiO₃ (PMN-xPT) single crystals in the morphotropic phase boundary (MPB) region at composition x = 0.31 (PMN-31% PT). On the macroscopic scale, x-ray diffraction (XRD) shows a mixture of strong and weak diffraction peaks of different widths. The closest match to XRD peak data is made with monoclinic Pm (MC) symmetry. On the local scale of a few nanometers, convergent beam electron diffraction (CBED) studies, with a 1.6-nm electron probe, reveal no obvious symmetry. These CBED experimental patterns can be approximately matched with simulations based on monoclinic symmetry,more » which suggests locally distorted monoclinic structure. A monoclinic Cm (MA or MB)-like symmetry could also be obtained from certain regions of the crystal by using a larger electron probe size of several tens of nanometers in diameter. Thus the monoclinic symmetry of single crystal PMN-31%PT is developed only in parts of the crystal by averaging over locally distorted structure on the scale of few tens of nanometers. The macroscopic symmetry observed by XRD is a result of averaging from the local structure in PMN-31%PT single crystal. The lack of local symmetry at a few nanometers scale suggests that the polarization switching results from a change in local displacements, which are not restricted to specific symmetry planes or directions.« less

  19. Continuous cross-over from ferroelectric to relaxor state and piezoelectric properties of BaTiO{sub 3}-BaZrO{sub 3}-CaTiO{sub 3} single crystals

    SciTech Connect (OSTI)

    Benabdallah, F.; Veber, P. Prakasam, M.; Viraphong, O.; Maglione, M.; Shimamura, K.

    2014-04-14

    Optimal properties like piezoelectricity can be found in polarizable materials for which the structure changes sharply under small composition variations in the vicinity of their morphotropic phase boundary or the triple point in their isobaric temperature-composition phase diagram. In the latter, lead-free (Ba{sub 0.850}Ca{sub 0.150})(Ti{sub 0.900}Zr{sub 0.100})O{sub 3} ceramics exhibit outstanding piezoelectric coefficients. For the first time, we report the growth of piezoelectric lead-free single crystals in the BaTiO{sub 3}-BaZrO{sub 3}-CaTiO{sub 3} pseudo-ternary system. The stoichiometry control in the CaO-BaO-TiO{sub 2}-ZrO{sub 2} solid solution led to single crystals with various compositions ranging from (Ba{sub 0.857}Ca{sub 0.143})(Ti{sub 0.928}Zr{sub 0.072})O{sub 3} to (Ba{sub 0.953}Ca{sub 0.047})(Ti{sub 0.427}Zr{sub 0.573})O{sub 3}. We evidenced a continuous cross-over from a ferroelectric state at high titanium content to a relaxor one on increasing the zirconium content. Such a property tuning is rather seldom observed in lead-free ferroelectrics and confirms what was already reported for ceramics. Single crystal with (Ba{sub 0.838}Ca{sub 0.162})(Ti{sub 0.854}Zr{sub 0.146})O{sub 3} composition, which has been grown and oriented along [001] crystallographic direction, displayed electromechanical coefficients d{sub 31} and k{sub 31} of 93 pC.N{sup −1} and 0.18, respectively, near the room temperature (T = 305 K)

  20. Versatile module for experiments with focussing neutron guides

    SciTech Connect (OSTI)

    Adams, T.; Pfleiderer, C.; Bni, P. [Physik-Department, Technische Universitt Mnchen, D-85748 Garching (Germany); Brandl, G.; Chacon, A.; Wagner, J. N.; Rahn, M.; Mhlbauer, S.; Georgii, R. [Physik-Department, Technische Universitt Mnchen, D-85748 Garching (Germany); Heinz Maier-Leibnitz Zentrum, FRM II, Technische Universitt Mnchen, D-85748 Garching (Germany)

    2014-09-22

    We report the development of a versatile module that permits fast and reliable use of focussing neutron guides under varying scattering angles. A simple procedure for setting up the module and neutron guides is illustrated by typical intensity patterns to highlight operational aspects as well as typical parasitic artefacts. Combining a high-precision alignment table with separate housings for the neutron guides on kinematic mounts, the change-over between neutron guides with different focussing characteristics requires no readjustments of the experimental setup. Exploiting substantial gain factors, we demonstrate the performance of this versatile neutron scattering module in a study of the effects of uniaxial stress on the domain populations in the transverse spin density wave phase of single crystal Cr.

  1. The rare earth silicon phosphides LnSi{sub 2}P{sub 6} (Ln = La, Ce, Pr, and Nd)

    SciTech Connect (OSTI)

    Kaiser, P.; Jeitschko, W.

    1996-07-01

    The title compounds were prepared in well-crystallized form from a tin flux and their crystal structure was determined from single-crystal diffractometer data of LaSi{sub 2}P{sub 6}: Cmc2{sub 1}, a = 1012.9(3) pm, b = 2817.5(7) pm, c = 1037.4(5) pm, Z = 16, R = 0.034 for 3303 structure factors and 181 variable parameters. The structure of the isotypic compound CeSi{sub 2}P{sub 6} was also refined from single-crystal X-ray data: a = 1011.8(4) pm, b = 2803.1(8) pm, c = 1031.1(4) pm, R = 0.035 for 2132 F values and 181 variables. The silicon and the phosphorus atoms could be distinguished by comparing their occupancy parameters obtained from both structure refinements. The assignments agree with those deduced by structure-chemical arguments. These atoms form a three-dimensionally infinite framework polyanion, which accommodates four different kinds of rare earth atoms: three with nine and one with ten phosphorus neighbors. The silicon atoms are all in tetrahedral phosphorus coordination. There are phosphorus atoms which have only two rare earth and two silicon neighbors, but most phosphorus atoms have--in addition to the rare earth and silicon atoms--phosphorus neighbors, thus forming P{sub 3}, P{sub 4}, P{sub 5}, and P{sub 6} units. Using oxidation numbers, the compounds can be rationalized with the formulas Ln{sup 3+}(Si{sub 2}P{sub 6}){sub 3-} and Ln{sup 3+}(Si{sup 4+}){sub 2}(P{sub 6}){sup 11-}, where the octet rule is obeyed for the silicon and phosphorus atoms and two electrons are counted for each Si-P and P-P interaction.

  2. Process for producing silicon

    DOE Patents [OSTI]

    Olson, J.M.; Carleton, K.L.

    1982-06-10

    A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  3. Process for producing silicon

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Carleton, Karen L. (Boulder, CO)

    1984-01-01

    A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  4. Response measurement of single-crystal chemical vapor deposition diamond radiation detector for intense X-rays aiming at neutron bang-time and neutron burn-history measurement on an inertial confinement fusion with fast ignition

    SciTech Connect (OSTI)

    Shimaoka, T. Kaneko, J. H.; Tsubota, M.; Arikawa, Y.; Nagai, T.; Kojima, S.; Abe, Y.; Sakata, S.; Fujioka, S.; Nakai, M.; Shiraga, H.; Azechi, H.; Isobe, M.; Sato, Y.; Chayahara, A.; Umezawa, H.; Shikata, S.

    2015-05-15

    A neutron bang time and burn history monitor in inertial confinement fusion with fast ignition are necessary for plasma diagnostics. In the FIREX project, however, no detector attained those capabilities because high-intensity X-rays accompanied fast electrons used for plasma heating. To solve this problem, single-crystal CVD diamond was grown and fabricated into a radiation detector. The detector, which had excellent charge transportation property, was tested to obtain a response function for intense X-rays. The applicability for neutron bang time and burn history monitor was verified experimentally. Charge collection efficiency of 99.5% 0.8% and 97.1% 1.4% for holes and electrons were obtained using 5.486 MeV alpha particles. The drift velocity at electric field which saturates charge collection efficiency was 1.1 0.4 10{sup 7} cm/s and 1.0 0.3 10{sup 7} cm/s for holes and electrons. Fast response of several ns pulse width for intense X-ray was obtained at the GEKKO XII experiment, which is sufficiently fast for ToF measurements to obtain a neutron signal separately from X-rays. Based on these results, we confirmed that the single-crystal CVD diamond detector obtained neutron signal with good S/N under ion temperature 0.51 keV and neutron yield of more than 10{sup 9} neutrons/shot.

  5. Epitaxial single-crystal thin films of MnxTi1-xO2-? grown on (rutile)TiO2 substrates with pulsed laser deposition: Experiment and theory

    SciTech Connect (OSTI)

    Ilton, Eugene S.; Droubay, Timothy C.; Chaka, Anne M.; Kovarik, Libor; Varga, Tamas; Arey, Bruce W.; Kerisit, Sebastien N.

    2015-02-01

    Epitaxial rutile-structured single-crystal MnxTi1-xO2-? films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400oC and PO2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or tetrahedral interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the ?-MnO2 lattice parameters to those of TiO2-rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways.

  6. Electrodeposition of molten silicon

    DOE Patents [OSTI]

    De Mattei, Robert C.; Elwell, Dennis; Feigelson, Robert S.

    1981-01-01

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

  7. Glass-silicon column

    DOE Patents [OSTI]

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  8. Table 10.8 Photovoltaic Cell and Module Shipments by Type, Trade, and Prices, 1982-2010

    U.S. Energy Information Administration (EIA) Indexed Site

    Photovoltaic Cell and Module Shipments by Type, Trade, and Prices, 1982-2010 Year U.S. Companies Reporting Shipments Shipments Trade Prices 1 Crystalline Silicon Thin-Film Total 2 Imports Exports Cells Modules Cells and Modules Modules Only Cells and Modules Modules Only Cells and Modules Modules Only Cells and Modules Modules Only Cells and Modules Modules Only Number Peak Kilowatts 3 Dollars 4 per Peak Watt 3 1982 19 NA NA NA NA 6,897 NA NA NA NA NA NA NA 1983 18 NA NA NA NA 12,620 NA NA NA

  9. Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-23

    The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

  10. High field magnetotransport and point contact Andreev reflection measurements on CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}BrDegenerate magnetic semiconductor single crystals

    SciTech Connect (OSTI)

    Borisov, K. Coey, J. M. D.; Stamenov, P.; Alaria, J.

    2014-05-07

    Single crystals of the metallically degenerate fully magnetic semiconductors CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br have been prepared by the Chemical Vapour Transport method, using either Se or Br as transport agents. The high-quality, millimetre-sized, octahedrally faceted, needle- and platelet-shaped crystals are characterised by means of high field magnetotransport (?{sub 0}H? 14?T) and Point Contact Andreev Reflection. The relatively high spin polarisation observed |P|>0.56, together with the relatively low minority carrier effective mass of 0.25 m{sub e}, and long scattering time 10{sup ?13}?s, could poise these materials for integration in low- and close-to-room temperature minority injection bipolar heterojunction transistor demonstrations.

  11. Phase transition in bulk single crystals and thin films of VO2 by nanoscale infrared spectroscopy and imaging

    SciTech Connect (OSTI)

    Liu, Mengkun; Sternbach, Aaron J.; Wagner, Martin; Slusar, Tetiana V.; Kong, Tai; Bud'ko, Sergey L.; Kittiwatanakul, Salinporn; Qazilbash, M. M.; McLeod, Alexander; Fei, Zhe; Abreu, Elsa; Zhang, Jingdi; Goldflam, Michael; Dai, Siyuan; Ni, Guang -Xin; Lu, Jiwei; Bechtel, Hans A.; Martin, Michael C.; Raschke, Markus B.; Averitt, Richard D.; Wolf, Stuart A.; Kim, Hyun -Tak; Canfield, Paul C.; Basov, D. N.

    2015-06-29

    We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO2 with sub-grain-size spatial resolution (~20nm), we show that epitaxial strain in VO2 thin films not only triggers spontaneous local phase separations, but leads to intermediate electronic and lattice states that are intrinsically different from those found in bulk. Generalized rules of strain- and symmetry-dependent mesoscopic phase inhomogeneity are also discussed. Furthermore, these results set the stage for a comprehensive understanding of complex energy landscapes that may not be readily determined by macroscopic approaches.

  12. Intermediate valence in single crystals of (Lu{sub 1?x}Y b{sub x}){sub 3}Rh{sub 4}Ge{sub 13} (0 ? x ? 1)

    SciTech Connect (OSTI)

    Rai, Binod K.; Morosan, E.

    2015-04-01

    Single crystals of (Lu{sub 1?x}Y b{sub x}){sub 3}Rh{sub 4}Ge{sub 13} were characterized by magnetization, specific heat, and electrical resistivity measurements. Doping Yb into the non-magnetic Lu{sub 3}Rh{sub 4}Ge{sub 13} compound tunes this cubic systems properties from a superconductor with disordered metal normal state (x < 0.05) to a Kondo for 0.05 ? x ?0.2 and intermediate valence at the highest Yb concentrations. The evidence for intermediate Yb valence comes from a broad maximum in the magnetic susceptibility and X-ray photoelectron spectroscopy. Furthermore, the resistivity displays a local maximum at finite temperatures at intermediate compositions x, followed by apparent metallic behavior closest to the Yb end compound in the series.

  13. Second order phase transition temperature of single crystals of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hadimani, R. L.; Melikhov, Y.; Schlagel, D. L.; Lograsso, T. A.; Dennis, K. W.; McCallum, R. W.; Jiles, D. C.

    2015-01-30

    Gd5(SixGe1–x)4 has mixed phases in the composition range 0.32 < x < 0.41, which have not been widely studied. In this paper, we have synthesized and indexed single crystal samples of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6. In this study, we have investigated the first order and second order phase transition temperatures of these samples using magnetic moment vs. temperature and magnetic moment vs. magnetic field at different temperatures. We have used a modified Arrott plot technique that was developed and reported by us previously to determine the “hidden” second order phase transition temperature of the orthorhombic II phase.

  14. Insulating and metallic spin glass in KxFe2-?-yNiySe2 (0.06 ? y ? 1.44 ) single crystals

    SciTech Connect (OSTI)

    Ryu, Hyejin; Abeykoon, Milinda; Wang, Kefeng; Lei, Hechang; Lazarevic, N.; Warren, J. B.; Bozin, E. S.; Popovic, Z. V.; Petrovic, C.

    2015-05-04

    We report electron doping effects by Ni in KxFe2-?-yNiySe? (0.06 ? y ? 1.44) single crystal alloys. A rich ground state phase diagram is observed. Thus, a small amount of Ni (~ 4%) suppressed superconductivity below 1.8 K, inducing insulating spin glass magnetic ground state for higher Ni content. With further Ni substitution, metallic resistivity is restored. For high Ni concentration in the lattice the unit cell symmetry is high symmetry I4/mmm with no phase separation whereas both I4/m + I4/mmm space groups were detected in the phase separated crystals when concentration of Ni < Fe. The absence of superconductivity coincides with the absence of crystalline Fe vacancy order.

  15. Silicon micro-mold

    DOE Patents [OSTI]

    Morales, Alfredo M.

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  16. Expanding Lorentz and spectrum corrections to large volumes of reciprocal space for single-crystal time-of-flight neutron diffraction

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Michels-Clark, Tara M.; Savici, Andrei T.; Lynch, Vickie E.; Wang, Xiaoping; Hoffmann, Christina M.

    2016-03-01

    Evidence is mounting that potentially exploitable properties of technologically and chemically interesting crystalline materials are often attributable to local structure effects, which can be observed as modulated diffuse scattering (mDS) next to Bragg diffraction (BD). BD forms a regular sparse grid of intense discrete points in reciprocal space. Traditionally, the intensity of each Bragg peak is extracted by integration of each individual reflection first, followed by application of the required corrections. In contrast, mDS is weak and covers expansive volumes of reciprocal space close to, or between, Bragg reflections. For a representative measurement of the diffuse scattering, multiple sample orientationsmore » are generally required, where many points in reciprocal space are measured multiple times and the resulting data are combined. The common post-integration data reduction method is not optimal with regard to counting statistics. A general and inclusive data processing method is needed. In this contribution, a comprehensive data analysis approach is introduced to correct and merge the full volume of scattering data in a single step, while correctly accounting for the statistical weight of the individual measurements. Lastly, development of this new approach required the exploration of a data treatment and correction protocol that includes the entire collected reciprocal space volume, using neutron time-of-flight or wavelength-resolved data collected at TOPAZ at the Spallation Neutron Source at Oak Ridge National Laboratory.« less

  17. Thermally Oxidized Silicon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Illustration of the silicon positions near the Si-SiO2 interface for a 4° miscut projected onto the ( ) plane. The silicon atoms in the substrate are blue and those in the oxide are red. The small black spots represent the translated silicon positions in the absence of static disorder. The silicon atoms in the oxide have been randomly assigned a magnitude and direction based on the static disorder value at that position in the

  18. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, R.A.; Seager, C.H.

    1996-12-10

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  19. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, Robert A.; Seager, Carleton H.

    1996-01-01

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  20. ZnO buffer layer for metal films on silicon substrates

    DOE Patents [OSTI]

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  1. Silicone-containing composition

    DOE Patents [OSTI]

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  2. Module Configuration

    DOE Patents [OSTI]

    Oweis, Salah; D'Ussel, Louis; Chagnon, Guy; Zuhowski, Michael; Sack, Tim; Laucournet, Gaullume; Jackson, Edward J.

    2002-06-04

    A stand alone battery module including: (a) a mechanical configuration; (b) a thermal management configuration; (c) an electrical connection configuration; and (d) an electronics configuration. Such a module is fully interchangeable in a battery pack assembly, mechanically, from the thermal management point of view, and electrically. With the same hardware, the module can accommodate different cell sizes and, therefore, can easily have different capacities. The module structure is designed to accommodate the electronics monitoring, protection, and printed wiring assembly boards (PWAs), as well as to allow airflow through the module. A plurality of modules may easily be connected together to form a battery pack. The parts of the module are designed to facilitate their manufacture and assembly.

  3. A spin-wave logic gate based on a width-modulated dynamic magnonic crystal

    SciTech Connect (OSTI)

    Nikitin, Andrey A.; Ustinov, Alexey B.; Semenov, Alexander A.; Kalinikos, Boris A.; Chumak, Andrii V.; Serga, Alexander A.; Vasyuchka, Vitaliy I.; Hillebrands, Burkard; Lhderanta, Erkki

    2015-03-09

    An electric current controlled spin-wave logic gate based on a width-modulated dynamic magnonic crystal is realized. The device utilizes a spin-wave waveguide fabricated from a single-crystal Yttrium Iron Garnet film and two conducting wires attached to the film surface. Application of electric currents to the wires provides a means for dynamic control of the effective geometry of waveguide and results in a suppression of the magnonic band gap. The performance of the magnonic crystal as an AND logic gate is demonstrated.

  4. Method for producing silicon nitride/silicon carbide composite

    DOE Patents [OSTI]

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-07-23

    Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

  5. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  6. Etching high aspect ratio (110) silicon grooves in CsOH

    SciTech Connect (OSTI)

    Yao, S.; Hesketh, P.J.; Macrander, A.T.

    1995-02-01

    In a previous study the authors developed a fabrication process for a single-crystal silicon X-ray analyzer for use at the Advanced Photon Source, a 6 GeV synchrotron accelerator ring under construction at Argonne National Laboratories. The bent silicon crystal will be used as an analyzer to collect and focus a monochromatic beam of X-rays by Bragg reflection with an energy resolution better than 10 meV for the (hhh) planes (H>6) for diffraction near backscattering. The cross-sectional geometry produced by anisotropic etching high aspect ratio (height/width = 115) silicon grooves with CSOH was studied as a function of the solution concentration. At 50 weight percent (w/o) CSOH straight sidewalls are produced, but at 15 and 25 w/o re-entrant tapered profiles are produced. The etch rates are increased in the groove by 25--100% indicating diffusion effects. The etch rate of the surface was in agreement with previous studies of CSOH etching, but unable to predict the dimensional changes in the grooves.

  7. Silicon-film {trademark} photovoltaic manufacturing technology. Annual subcontract report, 1 January 1994--31 December 1994

    SciTech Connect (OSTI)

    Collins, S.R.; Hall, R.B.; Rand, J.A.

    1995-11-01

    The goal of AstroPower`s PVMaT-2A project is to develop an advanced, low-cost manufacturing process for a new utility-scale, flat-plate module. This process starts with the production of continuous sheets of thin-film polycrystalline silicon using the Silicon-Film {trademark} process. Our main product focus in PVMaT-2A has been a 240 cm{sup 2} solar cell. Continuous sheets of silicon are produced and cut into wafers that are 15.5 cm on a side. Both standard modules (36 solar cells) and a new 56 solar cell module were produced. The targeted high power module design is a 170 watt module, used in a twelve module array to generate 2 kW. The solar cells, modules, and array developed here are described.

  8. Electric field geometries dominate quantum transport coupling in silicon nanoring

    SciTech Connect (OSTI)

    Lee, Tsung-Han E-mail: sfhu.hu@gmail.com; Hu, Shu-Fen E-mail: sfhu.hu@gmail.com

    2014-03-28

    Investigations on the relation between the geometries of silicon nanodevices and the quantum phenomenon they exhibit, such as the Aharonov–Bohm (AB) effect and the Coulomb blockade, were conducted. An arsenic doped silicon nanoring coupled with a nanowire by electron beam lithography was fabricated. At 1.47 K, Coulomb blockade oscillations were observed under modulation from the top gate voltage, and a periodic AB oscillation of ΔB = 0.178 T was estimated for a ring radius of 86 nm under a high sweeping magnetic field. Modulating the flat top gate and the pointed side gate was performed to cluster and separate the many electron quantum dots, which demonstrated that quantum confinement and interference effects coexisted in the doped silicon nanoring.

  9. Testing Protocol for Module Encapsulant Creep (Presentation)

    SciTech Connect (OSTI)

    Kempe, M. D.; Miller, D. C.; Wohlgemuth, J. H.; Kurtz, S. R.; Moseley, J. M.; Shah, Q.; Tamizhmani, G.; Sakurai, K.; Inoue, M.; Doi, T.; Masuda, A.

    2012-02-01

    Recently there has been an interest in the use of thermoplastic encapsulant materials in photovoltaic modules to replace chemically crosslinked materials, e.g., ethylene-vinyl acetate. The related motivations include the desire to: reduce lamination time or temperature; use less moisture-permeable materials; or use materials with better corrosion characteristics. However, the use of any thermoplastic material in a high-temperature environment raises safety and performance concerns, as the standardized tests currently do not expose the modules to temperatures in excess of 85C, yet modules may experience temperatures above 100C in operation. Here we constructed eight pairs of crystalline-silicon modules and eight pairs of glass/encapsulation/glass mock modules using different encapsulation materials of which only two were designed to chemically crosslink. One module set was exposed outdoors with insulation on the back side in Arizona in the summer, and an identical set was exposed in environmental chambers. High precision creep measurements and performance measurements indicate that despite many of these polymeric materials being in the melt state at some of the highest outdoor temperatures achievable, very little creep was seen because of their high viscosity, temperature heterogeneity across the modules, and in the case of the crystalline-silicon modules, the physical restraint of the backsheet. These findings have very important implications for the development of IEC and UL qualification and safety standards, and in regards to the necessary level of cure during the processing of crosslinking encapsulants.

  10. Spectroscopic ellipsometry characterization of thin-film silicon nitride

    SciTech Connect (OSTI)

    Jellison, G.E. Jr.; Modine, F.A.; Doshi, P.; Rohatgi, A.

    1997-05-01

    We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

  11. Performance Testing using Silicon Devices - Analysis of Accuracy: Preprint

    SciTech Connect (OSTI)

    Sengupta, M.; Gotseff, P.; Myers, D.; Stoffel, T.

    2012-06-01

    Accurately determining PV module performance in the field requires accurate measurements of solar irradiance reaching the PV panel (i.e., Plane-of-Array - POA Irradiance) with known measurement uncertainty. Pyranometers are commonly based on thermopile or silicon photodiode detectors. Silicon detectors, including PV reference cells, are an attractive choice for reasons that include faster time response (10 us) than thermopile detectors (1 s to 5 s), lower cost and maintenance. The main drawback of silicon detectors is their limited spectral response. Therefore, to determine broadband POA solar irradiance, a pyranometer calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under clear-sky conditions with respect to a broadband reference radiometer. The pyranometer is then used for various scenarios including varying airmass, panel orientation and atmospheric conditions. This would not be an issue if all irradiance wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately, the scattering and absorption signature varies widely with wavelength and the calibration factor for the silicon photodiode pyranometer is not appropriate for other conditions. This paper reviews the issues that will arise from the use of silicon detectors for PV performance measurement in the field based on measurements from a group of pyranometers mounted on a 1-axis solar tracker. Also we will present a comparison of simultaneous spectral and broadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.

  12. Tangshan Silicon Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    search Name: Tangshan Silicon Co Ltd Place: Tangshan, Hebei Province, China Product: Chinese silicon producer developing a 1000t silicon plant in Tangshan, Hebei Province. It has...

  13. Photovoltaic Crystalline Silicon Cell Basics | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Crystalline Silicon Cell Basics Photovoltaic Crystalline Silicon Cell Basics August 20, ... To create an electric field within a crystalline silicon photovoltaic (PV) cell, two ...

  14. Enabling Thin Silicon Solar Cell Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45, -45, and ...

  15. Microelectromechanical pump utilizing porous silicon (Patent...

    Office of Scientific and Technical Information (OSTI)

    pump utilizing porous silicon Title: Microelectromechanical pump utilizing porous silicon A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region ...

  16. Longi Silicon Materials Corp | Open Energy Information

    Open Energy Info (EERE)

    Longi Silicon Materials Corp Jump to: navigation, search Name: Longi Silicon Materials Corp Place: Xi'an, Shaanxi Province, China Zip: 710065 Product: A monocrystalline silicon...

  17. Pyrrole Hydrogenation over Rh(111) and Pt(111) Single-Crystal Surfaces and Hydrogenation Promotion Mediated by 1-Methylpyrrole: A Kinetic and Sum-Frequency Generation Vibrational Spectroscopy Study

    SciTech Connect (OSTI)

    Kliewer, Christopher J.; Bieri, Marco; Somorjai, Gabor A.

    2008-03-04

    Sum-frequency generation (SFG) surface vibrational spectroscopy and kinetic measurements using gas chromatography have been used to study the adsorption and hydrogenation of pyrrole over both Pt(111) and Rh(111) single-crystal surfaces at Torr pressures (3 Torr pyrrole, 30 Torr H{sub 2}) to form pyrrolidine and the minor product butylamine. Over Pt(111) at 298 K it was found that pyrrole adsorbs in an upright geometry cleaving the N-H bond to bind through the nitrogen evidenced by SFG data. Over Rh(111) at 298 K pyrrole adsorbs in a tilted geometry relative to the surface through the p-aromatic system. A pyrroline surface reaction intermediate, which was not detected in the gas phase, was seen by SFG during the hydrogenation over both surfaces. Significant enhancement of the reaction rate was achieved over both metal surfaces by adsorbing 1-methylpyrrole before reaction. SFG vibrational spectroscopic results indicate that reaction promotion is achieved by weakening the bonding between the N-containing products and the metal surface because of lateral interactions on the surface between 1-methylpyrrole and the reaction species, reducing the desorption energy of the products. It was found that the ring-opening product butylamine was a reaction poison over both surfaces, but this effect can be minimized by treating the catalyst surfaces with 1-methylpyrrole before reaction. The reaction rate was not enhanced with elevated temperatures, and SFG suggests desorption of pyrrole at elevated temperatures.

  18. Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal

    SciTech Connect (OSTI)

    Shen, Xuan; Yamada, Tomoaki; Lin, Ruoqian; Kamo, Takafumi; Funakubo, Hiroshi; Wu, Di; Xin, Huolin L.; Su, Dong

    2015-10-08

    In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO3 films grown on (111)-oriented SrTiO3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a<110> comprised of a misfit dislocation along <112>, and threading dislocations along <110> or <100>. The misfit dislocation with Burgers vector of a <110> can dissociate into two ½ a <110> partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba0.7Sr0.3)TiO3 films.

  19. Investigation into the evolution of the structure of K{sub 1-x}Li{sub x}Ta{sub 1-y}Nb{sub y}O{sub 3} single crystals under variations in temperature

    SciTech Connect (OSTI)

    Borisov, S. A.; Vakhrushev, S. B.; Koroleva, E. Yu.; Naberezhnov, A. A. Syrnikov, P. P.; Simkin, V. G.; Kutnjak, Z.; Egami, T.; Dmowski, W.; Piekarz, P.

    2007-05-15

    The evolution of the structure of K{sub 1-x}Li{sub x}Ta{sub 1-y}Nb{sub y}O{sub 3} single crystals with x = 0.001, y = 0.026, and 1900 ppm Cu (KLTN277) and with x = 0.0014 and y = 0.024 (KLTN123), which exhibit an extremely high permittivity (up to 4 x 10{sup 5} in the quasi-static regime for the KLTN277 crystal), is investigated in the range from room temperature to 20 K. It is demonstrated that, upon cooling to the lowest temperatures, both crystals retain their cubic structure, but the lattice parameters pass through a minimum at the temperature of the observed anomalies of the dielectric response ({approx}50 K). In the neutron diffraction pattern of the KLTN123 sample, satellites appear in the vicinity of the (hhh) reflections at temperatures below {approx}50 K. These satellites can be associated with the nucleation of the rhombohedral phase.

  20. Hydrogen in polar intermetallics: Syntheses and structures of the ternary Ca5Bi3D0.93, Yb5Bi3Hx, and Sm5Bi3H~1 by powder neutron or single crystal X-ray diffraction

    SciTech Connect (OSTI)

    Leon-Escamilla, E. Alejandro; Dervenagas, Panagiotis; Stasis, Constantine; Corbett, John D.

    2010-01-01

    The syntheses of the title compounds are described in detail. Structural characterizations from refinements of single crystal X-ray diffraction data for Yb{sub 5}Bi{sub 3}H{sub x} and Sm{sub 5}Bi{sub 3}H{sub 1} and of powder neutron diffraction data for Ca{sub 5}Bi{sub 3}D{sub 0.93(3)} are reported. These confirm that all three crystallize with the heavy atom structure type of {beta}-Yb{sub 5}Sb{sub 3}, and the third gives the first proof that the deuterium lies in the center of nominal calcium tetrahedra, isostructural with the Ca{sub 5}Sb{sub 3}F-type structure. These Ca and Yb phases are particularly stable with respect to dissociation to Mn{sub 5}Si{sub 3}-type product plus H{sub 2}. Some contradictions in the literature regarding Yb{sub 5}Sb{sub 3} and Yb{sub 5}Sb{sub 3}H{sub x} phases are considered in terms of adventitious hydrogen impurities that are generated during reactions in fused silica containers at elevated temperatures.

  1. Incommensurate magnetic ordering in Cu{sub 2}Te{sub 2}O{sub 5}X{sub 2} (X=Cl,Br) studied by single crystal neutron diffraction

    SciTech Connect (OSTI)

    Zaharko, O.; Roennow, H.; Mesot, J.; Crowe, S. J.; Paul, D. McK.; Brown, P. J.; Daoud-Aladine, A.; Meents, A.; Wagner, A.; Prester, M.; Berger, H.

    2006-02-01

    Polarized and unpolarized neutron-diffraction studies have been carried out on single crystals of the coupled spin tetrahedra systems Cu{sub 2}Te{sub 2}O{sub 5}X{sub 2} (X=Cl,Br). A model of the magnetic structure associated with the propagation vectors k{sup '}{sub Cl}{approx_equal}(-0.150,0.422,(1/2)) and k{sup '}{sub Br}{approx_equal}(-0.172,0.356,(1/2)) and stable below T{sub N}=18 K for X=Cl and T{sub N}=11 K for X=Br is proposed. A feature of the model, common to both the bromide and chloride, is a canted coplanar motif for the four Cu{sup 2+} spins on each tetrahedron which rotates on a helix from cell to cell following the propagation vector. The Cu{sup 2+} magnetic moment determined for X=Br,0.395(5){mu}{sub B}, is significantly less than for X=Cl,0.88(1){mu}{sub B} at 2 K. The magnetic structure of the chloride associated with the wave vector k{sup '} differs from that determined previously for the wave vector k{approx_equal}(0.150,0.422,(1/2)) [O. Zaharko et al., Phys. Rev. Lett. 93, 217206(E) (2004)].

  2. Temperature dependence of structural parameters in oxide-ion-conducting Nd{sub 9.33}(SiO{sub 4}){sub 6}O{sub 2}: single crystal X-ray studies from 295 to 900K

    SciTech Connect (OSTI)

    Okudera, Hiroki [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, DE-70569 Stuttgart (Germany)]. E-mail: h.okudera@fkf.mpg.de; Yoshiasa, Akira [Department of Earth and Space Science, Graduate School of Science, Osaka University, 1-1 Machikaneyama-cho, Toyonaka, Osaka 560-0043 (Japan); Masubuchi, Yuuji [Material Science and Engineering, Graduate School of Engineering, Hokkaido University, N13, W8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan); Higuchi, Mikio [Material Science and Engineering, Graduate School of Engineering, Hokkaido University, N13, W8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan); Kikkawa, Shinichi [Material Science and Engineering, Graduate School of Engineering, Hokkaido University, N13, W8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan)

    2004-12-01

    Crystallographic space group, structural parameters and their thermal changes in oxide-ion-conducting Nd{sub 9.33}(SiO{sub 4}){sub 6}O{sub 2} were investigated using high-temperature single-crystal X-ray diffraction experiments in the temperature range of 295=

  3. The future of amorphous silicon photovoltaic technology

    SciTech Connect (OSTI)

    Crandall, R.; Luft, W.

    1995-06-01

    Amorphous silicon modules are commercially available. They are the first truly commercial thin-film photovoltaic (PV) devices. Well-defined production processes over very large areas (>1 m{sup 2}) have been implemented. There are few environmental issues during manufacturing, deployment in the field, or with the eventual disposal of the modules. Manufacturing safety issues are well characterized and controllable. The highest measured initial efficiency to date is 13.7% for a small triple-stacked cell and the highest stabilized module efficiency is 10%. There is a consensus among researchers, that in order to achieve a 15% stabilized efficiency, a triple-junction amorphous silicon structure is required. Fundamental improvements in alloys are needed for higher efficiencies. This is being pursued through the DOE/NREL Thin-Film Partnership Program. Cost reductions through improved manufacturing processes are being pursued under the National Renewable Energy Laboratory/US Department of Energy (NREL/DOE)-sponsored research in manufacturing technology (PVMaT). Much of the work in designing a-Si devices is a result of trying to compensate for the Staebler-Wronski effect. Some new deposition techniques hold promise because they have produced materials with lower stabilized defect densities. However, none has yet produced a high efficiency device and shown it to be more stable than those from standard glow discharge deposited material.

  4. Flat-Plate Photovoltaic Module Basics | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Module Basics Flat-Plate Photovoltaic Module Basics August 20, 2013 - 4:25pm Addthis Flat-plate photovoltaic (PV) modules are made of several components, including the front surface materials, encapsulant, rear surface, and frame. Front Surface Materials The front surface of a flat-plate PV module must have a high transmission in the wavelengths that can be used by the solar cells in the module. For example, for silicon solar cells, the top surface must have high transmission of light with

  5. Installations

    U.S. Energy Information Administration (EIA) Indexed Site

    Reporting companies, total number of: 81 Employment, full-time equivalent employees: 9,288 Module and/or cell manufacturing 33 Module or system design 23 Prototype module development 23 Prototype systems development 12 Wholesale distribution 42 Retail distribution 15 Installations 12 Other 8 90-100% 53 50-89% 6 10-49% 3 Less than 10% 19 Crystalline silicon: single-crystal modules 15 Crystalline silicon: cast modules 9 Thin-film: amorphous silicon modules 1 Thin-film: other modules 4

  6. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in platinum. Exploring metals that catalyze other important reactions-such as palladium, silver, copper, rhodium, iron, and cobalt-might also help researchers determine...

  7. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    automobile catalytic converters, and the degradation of platinum electrodes in hydrogen fuel cells. As the carbon monoxide coverage of the platinum surfaces increased, the...

  8. Synthesis, spectral characterization, and single crystal structure...

    Office of Scientific and Technical Information (OSTI)

    Citation Details In-Document Search Title: Synthesis, spectral ... Resource Type: Journal Article Resource Relation: Journal Name: Crystallography Reports; Journal Volume: ...

  9. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The next steps will be to determine whether other adsorbed reactants, such as oxygen or hydrogen, also result in the creation of nanoclusters in platinum. Exploring metals that...

  10. Perpendicular Magnetism Unparalleled Find in Single Crystal ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    order coexisting in a single sample. Article Title: Itinerant Ferromagnetism in the As 4p Conduction Band of Ba0.6K0.4Mn2As2 Identified by X-Ray Magnetic Circular Dichroism...

  11. Nonequilibrium quasiparticle relaxation dynamics in single crystals...

    Office of Scientific and Technical Information (OSTI)

    Publication Date: 2011-09-13 OSTI Identifier: 1100755 Type: Publisher's Accepted Manuscript Journal Name: Physical Review. B. Condensed Matter and Materials Physics Additional ...

  12. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    have found that under high pressure-comparable to the pressures at which many industrial technologies operate-platinum surfaces can change their structure dramatically in response...

  13. Platinum Nanoclusters Out-Perform Single Crystals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    could be replaced with less expensive alternatives, lowering the cost of the final products. Researchers have discovered that the presence of high densities of carbon...

  14. Year Modules

    U.S. Energy Information Administration (EIA) Indexed Site

    Annual photovoltaic module shipments, 2003-2013 (peak kilowatts) Year Modules 2003 80,062 2004 143,274 2005 204,996 2006 320,208 2007 494,148 2008 920,693 2009 1,188,879 2010 2,644,498 2011 3,772,075 2012 4,655,005 2013 4,984,881 Source: U.S. Energy Information Administration, Form EIA-63B, 'Annual Photovoltaic Cell/Module Shipments Report.' Note: Includes both U.S. Shipments and Exports.

  15. Year Modules

    U.S. Energy Information Administration (EIA) Indexed Site

    dollars per peak watt) Year Modules 2003 $3.17 2004 $2.99 2005 $3.19 2006 $3.50 2007 $3.37 2008 $3.49 2009 $2.79 2010 $1.96 2011 $1.59 2012 $1.15 2013 $0.75 Table 4. Average value of photovoltaic modules, 2003-2013 Source: U.S. Energy Information Administration, Form EIA-63B, 'Annual Photovoltaic Cell/Module Shipments Report.' Note: Dollars are not adjusted for inflation.

  16. Ultratough, Thermally Stable Polycrystalline Diamond/Silicon...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide Nanocomposites for Drill Bits Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide ...

  17. Fluoroethylene carbonate and %22silicon oxide%22 on silicon anodes:

    Office of Scientific and Technical Information (OSTI)

    modeling SEI reaction mechanisms. (Conference) | SciTech Connect Fluoroethylene carbonate and %22silicon oxide%22 on silicon anodes: modeling SEI reaction mechanisms. Citation Details In-Document Search Title: Fluoroethylene carbonate and %22silicon oxide%22 on silicon anodes: modeling SEI reaction mechanisms. Abstract not provided. Authors: Leung, Kevin Publication Date: 2013-05-01 OSTI Identifier: 1115631 Report Number(s): SAND2013-3743C 479901 DOE Contract Number: AC04-94AL85000 Resource

  18. Silicon Cells | Open Energy Information

    Open Energy Info (EERE)

    a low cost method of processing silicon to produce a new generation of high energy density batteries. References: Silicon Cells1 This article is a stub. You can help OpenEI...

  19. Electrostatically actuatable light modulating device

    DOE Patents [OSTI]

    Koehler, Dale R.

    1991-01-01

    The electrostatically actuatable light modulator utilizes an opaque substrate plate patterned with an array of aperture cells, the cells comprised of physically positionable dielectric shutters and electrostatic actuators. With incorporation of a light source and a viewing screen, a projection display system is effected. Inclusion of a color filter array aligned with the aperture cells accomplishes a color display. The system is realized in terms of a silicon based manufacturing technology allowing fabrication of a high resolution capability in a physically small device which with the utilization of included magnification optics allows both large and small projection displays.

  20. Hybrid metasurface for ultra-broadband terahertz modulation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Heyes, Jane E.; Withayachumnankul, Withawat; Grady, Nathaniel K.; Chowdhury, Dibakar Roy; Azad, Abul K.; Chen, Hou-Tong

    2014-11-05

    We demonstrate an ultra-broadband free-space terahertz modulator based on a semiconductor-integrated metasurface. The modulator is made of a planar array of metal cut-wires on a silicon-on-sapphire substrate, where the silicon layer functions as photoconductive switches. Without external excitation, the cut-wire array exhibits a Lorentzian resonant response with a transmission passband spanning dc up to the fundamental dipole resonance above 2 THz. Under photoexcitation with 1.55 eV near-infrared light, the silicon regions in the cut-wire gaps become highly conductive, causing a transition of the resonant metasurface to a wire grating with a Drude response. In effect, the low-frequency passband below 2more » THz evolves into a stopband for the incident terahertz waves. Experimental validations confirm a bandwidth of at least 100%, spanning 0.5 to 1.5 THz with -10 dB modulation depth. This modulation depth is far superior to -5 dB achievable from a plain silicon-on-sapphire substrate with effectively 25 times higher pumping energy. The proposed concept of ultra-broadband metasurface modulator can be readily extended to electrically controlled terahertz wave modulation.« less

  1. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, John W.

    1994-01-01

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  2. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, J.W.

    1994-01-11

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  3. Enhanced ferroelectric properties and thermal stability of nonstoichiometric 0.92(Na{sub 0.5}Bi{sub 0.5})TiO{sub 3}-0.08(K{sub 0.5}Bi{sub 0.5})TiO{sub 3} single crystals

    SciTech Connect (OSTI)

    Zhang, Haiwu E-mail: hsluo@mail.sic.ac.cn; Chen, Chao; Deng, Hao; Li, Long; Graduate University of Chinese Academy of Sciences, Beijing 100049 ; Zhao, Xiangyong; Lin, Di; Li, Xiaobing; Ren, Bo; Luo, Haosu E-mail: hsluo@mail.sic.ac.cn; Yan, Jun

    2013-11-18

    Bi deficient, Mn doped 0.92(Na{sub 0.5}Bi{sub 0.5})TiO{sub 3}-0.08(K{sub 0.5}Bi{sub 0.5})TiO{sub 3} single crystals were grown by carefully controlled top-seeded solution growth method. Local structures were investigated by transmission electron microscopy. The site occupation and valence state of manganese were characterized by electron paramagnetic resonance spectrum. The leakage current density in the as-grown single crystals is effectively depressed. The introduced defect complexes suppress the temperature induced phase transformation, increasing the depolarization temperature (165?C) and thermal stability of ferroelectric properties.

  4. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  5. Thermionic modules

    DOE Patents [OSTI]

    King, Donald B.; Sadwick, Laurence P.; Wernsman, Bernard R.

    2002-06-18

    Modules of assembled microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures manufactured using MEMS manufacturing techniques including chemical vapor deposition. The MTCs incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices and modules can be fabricated at modest costs.

  6. In-situ Studies of the Reactions of Bifunctional and Heterocyclic Molecules over Noble Metal Single Crystal and Nanoparticle Catalysts Studied with Kinetics and Sum-Frequency Generation Vibrational Spectroscopy

    SciTech Connect (OSTI)

    Kliewer, Christopher J.

    2009-06-30

    Sum frequency generation surface vibrational spectroscopy (SFG-VS) in combination with gas chromatography (GC) was used in-situ to monitor surface bound reaction intermediates and reaction selectivities for the hydrogenation reactions of pyrrole, furan, pyridine, acrolein, crotonaldehyde, and prenal over Pt(111), Pt(100), Rh(111), and platinum nanoparticles under Torr reactant pressures and temperatures of 300K to 450K. The focus of this work is the correlation between the SFG-VS observed surface bound reaction intermediates and adsorption modes with the reaction selectivity, and how this is affected by catalyst structure and temperature. Pyrrole hydrogenation was investigated over Pt(111) and Rh(111) single crystals at Torr pressures. It was found that pyrrole adsorbs to Pt(111) perpendicularly by cleaving the N-H bond and binding through the nitrogen. However, over Rh(111) pyrrole adsorbs in a tilted geometry binding through the {pi}-aromatic orbitals. A surface-bound pyrroline reaction intermediate was detected over both surfaces with SFG-VS. It was found that the ring-cracking product butylamine is a reaction poison over both surfaces studied. Furan hydrogenation was studied over Pt(111), Pt(100), 10 nm cubic platinum nanoparticles and 1 nm platinum nanoparticles. The product distribution was observed to be highly structure sensitive and the acquired SFG-VS spectra reflected this sensitivity. Pt(100) exhibited more ring-cracking to form butanol than Pt(111), while the nanoparticles yielded higher selectivities for the partially saturated ring dihydrofuran. Pyridine hydrogenation was investigated over Pt(111) and Pt(100). The {alpha}-pyridyl surface adsorption mode was observed with SFG-VS over both surfaces. 1,4-dihydropyridine was seen as a surface intermediate over Pt(100) but not Pt(111). Upon heating the surfaces to 350K, the adsorbed pyridine changes to a flat-lying adsorption mode. No evidence was found for the pyridinium cation. The hydrogenation of the {alpha},{beta}-unsaturated aldehydes acrolein, crotonaldehyde, and prenal were investigated over Pt(111) and Pt(100). The selectivity for the hydrogenation of the C=C bond was found to depend on the number of methyl groups added to the bond. The adsorption modes of the three aldehydes were determined. The hydrogenation of crotonaldehyde was found to be nearly structure insensitive as the TOF and selectivity were very close to the same over Pt(111) and Pt(100). SFG-VS indicated identical surface intermediates over the two crystal faces during crotonaldehyde hydrogenation.

  7. Laminated photovoltaic modules using back-contact solar cells

    DOE Patents [OSTI]

    Gee, James M.; Garrett, Stephen E.; Morgan, William P.; Worobey, Walter

    1999-09-14

    Photovoltaic modules which comprise back-contact solar cells, such as back-contact crystalline silicon solar cells, positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The module designs allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  8. Results of I-V Curves and Visual Inspection of PV Modules Deployed at TEP Solar Test Yard (Poster)

    SciTech Connect (OSTI)

    McNutt, P.; Wohlgemuth, J.; Miller, D.; Stoltenberg, B.

    2014-02-01

    The purpose of the PV Service Life Prediction project is to examine and report on how solar modules are holding up after being in the field for 5 or more years. This poster presents the common problems crystalline-silicon and thin-film modules exhibit, including details of modules from three manufactures that were tested January 13-16, 2014.

  9. Efficient Nanostructured Silicon (Black Silicon) PV Devices - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation Portal Efficient Nanostructured Silicon (Black Silicon) PV Devices National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary Antireflective (AR) coatings on solar cells increase the efficiency of the cells by suppressing reflection, which allows more photons to enter a silicon (Si) wafer and increases the flow of electricity. Traditional AR coatings however, add significant cost to the solar cell manufacturing process. NREL scientists

  10. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, Rishi; Baik, Sunggi

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  11. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, R.; Baik, S.

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  12. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    SciTech Connect (OSTI)

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  13. Making silicon stronger.

    SciTech Connect (OSTI)

    Boyce, Brad Lee

    2010-11-01

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

  14. Multicolored Vertical Silicon Nanowires

    SciTech Connect (OSTI)

    Seo, Kwanyong; Wober, Munib; Steinvurzel, P.; Schonbrun, E.; Dan, Yaping; Ellenbogen, T.; Crozier, K. B.

    2011-04-13

    We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental data to the results of finite difference time domain simulations to elucidate the physical mechanisms behind the phenomena we observe. The nanowires are fabricated as arrays, but the vivid colors arise not from scattering or diffractive effects of the array, but from the guided mode properties of the individual nanowires. Each nanowire can thus define its own color, allowing for complex spatial patterning. We anticipate that the color filter effect we demonstrate could be employed in nanoscale image sensor devices.

  15. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  16. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  17. Thermoelectric module

    DOE Patents [OSTI]

    Kortier, William E.; Mueller, John J.; Eggers, Philip E.

    1980-07-08

    A thermoelectric module containing lead telluride as the thermoelectric mrial is encapsulated as tightly as possible in a stainless steel canister to provide minimum void volume in the canister. The lead telluride thermoelectric elements are pressure-contacted to a tungsten hot strap and metallurgically bonded at the cold junction to iron shoes with a barrier layer of tin telluride between the iron shoe and the p-type lead telluride element.

  18. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N.; Lindemer, Terrence B.

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  19. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  20. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=58 GPa, T=1400K2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  1. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  2. Single crystalline mesoporous silicon nanowires

    SciTech Connect (OSTI)

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  3. Photovoltaic module and module arrays

    DOE Patents [OSTI]

    Botkin, Jonathan; Graves, Simon; Lenox, Carl J. S.; Culligan, Matthew; Danning, Matt

    2013-08-27

    A photovoltaic (PV) module including a PV device and a frame, The PV device has a PV laminate defining a perimeter and a major plane. The frame is assembled to and encases the laminate perimeter, and includes leading, trailing, and side frame members, and an arm that forms a support face opposite the laminate. The support face is adapted for placement against a horizontal installation surface, to support and orient the laminate in a non-parallel or tilted arrangement. Upon final assembly, the laminate and the frame combine to define a unitary structure. The frame can orient the laminate at an angle in the range of 3.degree.-7.degree. from horizontal, and can be entirely formed of a polymeric material. Optionally, the arm incorporates integral feature(s) that facilitate interconnection with corresponding features of a second, identically formed PV module.

  4. Photovoltaic module and module arrays

    DOE Patents [OSTI]

    Botkin, Jonathan; Graves, Simon; Lenox, Carl J. S.; Culligan, Matthew; Danning, Matt

    2012-07-17

    A photovoltaic (PV) module including a PV device and a frame. The PV device has a PV laminate defining a perimeter and a major plane. The frame is assembled to and encases the laminate perimeter, and includes leading, trailing, and side frame members, and an arm that forms a support face opposite the laminate. The support face is adapted for placement against a horizontal installation surface, to support and orient the laminate in a non-parallel or tilted arrangement. Upon final assembly, the laminate and the frame combine to define a unitary structure. The frame can orient the laminate at an angle in the range of 3.degree.-7.degree. from horizontal, and can be entirely formed of a polymeric material. Optionally, the arm incorporates integral feature(s) that facilitate interconnection with corresponding features of a second, identically formed PV module.

  5. Black Silicon Etching - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Return to Search Black Silicon Etching Award-winning, efficient, and inexpensive ... Black Silicon Etching has been proven to be 16.8% efficient for single-crystalline silicon ...

  6. Photovoltaic Silicon Cell Basics | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Silicon Cell Basics Photovoltaic Silicon Cell Basics August 20, 2013 - 2:19pm Addthis Silicon-used to make some the earliest photovoltaic (PV) devices-is still the most popular ...

  7. Flexible Thin-Film Silicon Solar Cells

    SciTech Connect (OSTI)

    Vijh, Aarohi; Cao, Simon; Mohring, Brad

    2014-01-11

    High fuel costs, environmental concerns and issues of national energy security have brought increasing attention to a distributed generation program for electricity based on solar technology. Rooftop photovoltaic (PV) systems provide distributed generation since the power is consumed at the point of production, thus eliminating the need for costly additional transmission lines. However, most current photovoltaic modules are heavy and require a significant amount of labor and accessory hardware such as mounting frames for installation on rooftops. This makes rooftop systems impractical or cost prohibitive in many instances. Under this project, Xunlight has advanced its manufacturing process for the production of lightweight, flexible thin-film silicon based photovoltaic modules, and has enhanced the reliability and performance of Xunlights products. These modules are easily unrolled and adhered directly to standard commercial roofs without mounting structures or integrated directly into roofing membrane materials for the lowest possible installation costs on the market. Importantly, Xunlight has now established strategic alliances with roofing material manufacturers and other OEMs for the development of building integrated photovoltaic roofing and other PV-enabled products, and has deployed its products in a number of commercial installations with these business partners.

  8. Longwei Silicon Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Silicon Co Ltd Place: Liancheng, Fujian Province, China Sector: Solar Product: A Chinese sillicon metal producer who also produce 4N-6N silicon for solar use. Coordinates:...

  9. Laser, Supercomputer Measure Speedy Electrons in Silicon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser, Supercomputer Measure Speedy Electrons in Silicon Laser, Supercomputer Measure Speedy Electrons in Silicon Simulations at NERSC Help Illuminate Attosecond Laser Experiment ...

  10. Silicon Crystals Inc | Open Energy Information

    Open Energy Info (EERE)

    Zip: 95742 Product: Supplier of semi-conductor grade silicon for applications that demand unusual shapes and sizes. References: Silicon Crystals Inc1 This article is a stub....

  11. Silicon Border Development LLC | Open Energy Information

    Open Energy Info (EERE)

    Silicon Border Development LLC Jump to: navigation, search Name: Silicon Border Development LLC Place: Poway, California Zip: 92064 Sector: Solar Product: US-based developer of...

  12. Ultralow-Power Silicon Microphotonic Communications Platform

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ultralow-Power Silicon Microphotonic Communications Platform 1 R&D 100 Entry Ultralow-Power Silicon Microphotonic Communications Platform 2 R&D 100 Entry Submitting Organization ...

  13. Silicon Chemical Corp SCC | Open Energy Information

    Open Energy Info (EERE)

    Corp SCC Jump to: navigation, search Name: Silicon Chemical Corp (SCC) Place: Vancouver, Washington State Zip: 98687 Product: US manufacturer of polysilicon and silicon chemical...

  14. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1996-01-30

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  15. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    1998-06-02

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  16. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    1996-01-01

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  17. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1998-06-02

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  18. Structure and physical properties of single crystal PrCr{sub 2}Al{sub 20} and CeM{sub 2}Al{sub 20} (M=V, Cr): A comparison of compounds adopting the CeCr{sub 2}Al{sub 20} structure type

    SciTech Connect (OSTI)

    Kangas, Michael J.; Schmitt, Devin C.; Sakai, Akito; Nakatsuji, Satoru; Institute of Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581 ; Chan, Julia Y.

    2012-12-15

    Crystal growth and full structure determination of compounds adopting the CeCr{sub 2}Al{sub 20} structure type, LnTi{sub 2}Al{sub 20} (Ln=La-Pr, Sm, and Yb), LnV{sub 2}Al{sub 20} (Ln=La-Pr, and Sm), and LnCr{sub 2}Al{sub 20} (Ln=La-Pr, Sm, and Yb), are reported. Resistivity, magnetic susceptibility, and heat capacity of flux grown single crystals of the nonmagnetic CeM{sub 2}Al{sub 20} (Ln=Ce, Yb; M=Ti, V) compounds are compared to PrCr{sub 2}Al{sub 20}. Of particular interest is PrCr{sub 2}Al{sub 20} which does not show any phase transition down to the lowest temperature of the measurement (400 mK in resistivity measurement and 1.8 K for magnetic susceptibility measurements) and exhibits Kondo behavior at low temperatures. - Graphical abstract: Crystal structure of SmV{sub 2}Al{sub 20} showing the interpenetrating diamond-like samarium network and pyrochlore-like vanadium network. Highlights: Black-Right-Pointing-Pointer Single crystals of LnM{sub 2}Al{sub 20} were grown from a molten aluminum flux. Black-Right-Pointing-Pointer Magnetic, electrical, and specific heat of single crystal LnM{sub 2}Al{sub 20} are presented. Black-Right-Pointing-Pointer PrCr{sub 2}Al{sub 20} exhibits evidence of Kondo effect.

  19. A solar module fabrication process for HALE solar electric UAVs

    SciTech Connect (OSTI)

    Carey, P.G.; Aceves, R.C.; Colella, N.J.; Williams, K.A.; Sinton, R.A.; Glenn, G.S.

    1994-12-12

    We describe a fabrication process used to manufacture high power-to-weight-ratio flexible solar array modules for use on high-altitude-long-endurance (HALE) solar-electric unmanned air vehicles (UAVs). These modules have achieved power-to-weight ratios of 315 and 396 W/kg for 150{mu}m-thick monofacial and 110{mu}m-thick bifacial silicon solar cells, respectively. These calculations reflect average module efficiencies of 15.3% (150{mu}m) and 14.7% (110{mu}m) obtained from electrical tests performed by Spectrolab, Inc. under AMO global conditions at 25{degrees}C, and include weight contributions from all module components (solar cells, lamination material, bypass diodes, interconnect wires, and adhesive tape used to attach the modules to the wing). The fabrication, testing, and performance of 32 m{sup 2} of these modules will be described.

  20. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  1. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  2. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Carlson, David E.

    1980-01-01

    An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

  3. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Devaud, Genevieve

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  4. Cordierite silicon nitride filters

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B. ); Duiven, R.; Berger, M. ); Cleveland, J.; Ferri, J. )

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  5. Lightweight photovoltaic module development for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Nowlan, M.J.; Maglitta, J.C.; Lamp, T.R.

    1998-07-01

    Lightweight photovoltaic modules are being developed for powering high altitude unmanned aerial vehicles (UAVs). Terrestrial crystalline silicon solar cell and module technologies are being applied to minimize module cost, with modifications to improve module specific power (W/kg) and power density (W/m{sup 2}). New module processes are being developed for assembling standard thickness (320 mm) and thin (125 mm) solar cells, thin (50 to 100 mm) encapsulant films, and thin (25 mm) cover films. In comparison, typical terrestrial modules use 300 to 400 mm thick solar cells, 460 mm thick encapsulants, and 3.2 mm thick glass covers. The use of thin, lightweight materials allows the fabrication of modules with specific powers ranging from 120 to 200 W/kg, depending on cell thickness and efficiency, compared to 15 W/kg or less for conventional terrestrial modules. High efficiency designs based on ultra-thin (5 mm) GaAs cells have also been developed, with the potential for achieving substantially higher specific powers. Initial design, development, and module assembly work is completed. Prototype modules were fabricated in sizes up to 45 cm x 99 cm. Module materials and processes are being evaluated through accelerated environmental testing, including thermal cycling, humidity-freeze cycling, mechanical cycling, and exposure to UV and visible light.

  6. Supported PV module assembly

    DOE Patents [OSTI]

    Mascolo, Gianluigi; Taggart, David F.; Botkin, Jonathan D.; Edgett, Christopher S.

    2013-10-15

    A supported PV assembly may include a PV module comprising a PV panel and PV module supports including module supports having a support surface supporting the module, a module registration member engaging the PV module to properly position the PV module on the module support, and a mounting element. In some embodiments the PV module registration members engage only the external surfaces of the PV modules at the corners. In some embodiments the assembly includes a wind deflector with ballast secured to a least one of the PV module supports and the wind deflector. An array of the assemblies can be secured to one another at their corners to prevent horizontal separation of the adjacent corners while permitting the PV modules to flex relative to one another so to permit the array of PV modules to follow a contour of the support surface.

  7. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot; Luthra, Krishan Lal

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  8. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  9. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOE Patents [OSTI]

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  10. Silicon nitride ceramic comprising samaria and ytterbia

    DOE Patents [OSTI]

    Yeckley, Russell L.

    1996-01-01

    This invention relates to a sintered silicon nitride ceramic comprising samaria and ytterbia for enhanced toughness.

  11. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R.; Brzezinski, Mark A.

    1996-01-01

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  12. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, D.R.; Brzezinski, M.A.

    1996-06-11

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidation state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  13. Amorphous silicon research. Annual subcontract report, October 1, 1994--September 30, 1995

    SciTech Connect (OSTI)

    Arya, R.R.; Bennett, M.; Bradley, D.

    1996-02-01

    The major effort in this program is to develop cost-effective processes which satisfy efficiency, yield, and material usage criteria for mass production of amorphous silicon-based multijunction modules. New and improved processes were developed for the component cells and a more robust rear contact was developed for better long term stability.

  14. High-temperature morphological evolution of lithographically introduced cavities in silicon carbide

    SciTech Connect (OSTI)

    Narushima, Takayuki; Glaeser, Andreas M.

    2000-12-01

    Internal cavities of controlled geometry and crystallography were introduced in 6H silicon carbide single crystals by combining lithographic methods, ion beam etching, and solid-state diffusion bonding. The morphological evolution of these internal cavities (negative crystals) in response to anneals of up to 128 h duration at 1900 degrees C was examined using optical microscopy. Surface energy anisotropy and faceting have a strong influence on both the geometric and kinetic characteristics of evolution. Decomposition of 12{bar 1}0 cavity edges into 101{bar 0} facets was observed after 16 h anneals, indicating that 12{bar 1}0 faces are not components of the Wulff shape. The shape evolution kinetics of penny-shaped cavities were also investigated. Experimentally observed evolution rates decreased much more rapidly with those predicted by a model in which surface diffusion is assumed to be rate-limiting. This suggests that the development of facets, and the associated loss of ledges and terraces during the initial stages of evolution results in an evolution process limited by the nucleation rate of attachment/detachment sites (ledges) on the facets.

  15. 17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating

    SciTech Connect (OSTI)

    Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

    2011-01-01

    In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon `black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in `black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

  16. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  17. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, Kurt H.; Sigmon, Thomas W.

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  18. BY SILICON CRYSTALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    c October 29, 1942 a 1 1 _MIGH aECTgFXCATIOH - BY SILICON CRYSTALS . . c .. I n. The excellent pesformmce of Brftieh "red dot" c r y s t a l s f e explained R R due t o the kgife edge contact i n a t A polfehod ~ X ' f l i C B o H i g h frequency m c t l f f c n t f o n 8ependre c r i t i c a l l y on the ape%e;y of the rectifytnc boundary layer o f the crystal, C, For hl#$ comvere~on e f f i c i e n c y , the product c d t h i ~ capacity m a o f ' t h e @forward" (bulk) re-.

  19. Microelectromechanical pump utilizing porous silicon (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Microelectromechanical pump utilizing porous silicon Title: Microelectromechanical pump utilizing porous silicon A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a

  20. NERSC Python Modules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NERSC Python Modules NERSC Python Modules Python Interpreter Modules To use the NERSC-built installation, type: module load python This loads the default version of the following useful core modules: python_base: Python 2.7.x module. numpy: Defines the numerical array and matrix type and basic operations on them. scipy: Uses numpy to do advanced math, signal processing, optimization, statistics and much more. matplotlib: Plotting/visualization library. ipython: Interactive python shell offering

  1. Huachang Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Huachang Silicon Material Co Ltd Jump to: navigation, search Name: Huachang Silicon Material Co Ltd Place: Jinzhou, Liaoning Province, China Product: A monocrystalline silicon...

  2. Jinzhou Huari Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Huari Silicon Material Co Ltd Jump to: navigation, search Name: Jinzhou Huari Silicon Material Co Ltd Place: China Product: Chinese manufacturer of mono-crystalline silicon ingot....

  3. Silicon-Film{trademark} photovoltaic manufacturing technology. Semiannual subcontract report, 15 October 1993--15 April 1994

    SciTech Connect (OSTI)

    Collins, S.R.; Hall, R.B.

    1994-09-01

    This report describes work to develop an advanced, low-cost manufacturing process for a now utility-scale, flat-plate module. This process starts with the production of continuous sheets of thin-film, polycrystalline silicon using the Silicon-Film{trademark} process. Sheets are cut into wafers that are nominally 15 cm on a side. Fifty-six of these wafers are then fabricated into solar cells that are strung together into a 170-W module. Twelve of these modules form a 2-kW array. The program has three main components: (1) development of a Silicon-Film{trademark} wafer machine that is capable of manufacturing waters that are 225 cm{sup 2} in size at a rate of 3.0 MW/yr, with a total product cost reduction of 70%; (2) development of an advanced solar cell manufacturing process that is capable of turning the Silicon-Film{trademark} wafer into a 3.25-W solar cell; and (3) development of an advanced module design based on these large-area silicon solar cells with an average power of 170 W for 56 solar cells and 113 W for 36 solar cells.

  4. Ballasted photovoltaic module and module arrays

    DOE Patents [OSTI]

    Botkin, Jonathan; Graves, Simon; Danning, Matt

    2011-11-29

    A photovoltaic (PV) module assembly including a PV module and a ballast tray. The PV module includes a PV device and a frame. A PV laminate is assembled to the frame, and the frame includes an arm. The ballast tray is adapted for containing ballast and is removably associated with the PV module in a ballasting state where the tray is vertically under the PV laminate and vertically over the arm to impede overt displacement of the PV module. The PV module assembly can be installed to a flat commercial rooftop, with the PV module and the ballast tray both resting upon the rooftop. In some embodiments, the ballasting state includes corresponding surfaces of the arm and the tray being spaced from one another under normal (low or no wind) conditions, such that the frame is not continuously subjected to a weight of the tray.

  5. Direct Production of Silicones From Sand

    SciTech Connect (OSTI)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  6. Module 4- Budgeting

    Broader source: Energy.gov [DOE]

    This module outlines basic costing concepts such as control accounts, work packages and planning packages.

  7. Modules Software Environment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Environment » Modules Environment Modules Software Environment NERSC uses the module utility to manage nearly all software. There are two huge advantages of the module approach: NERSC can provide many different versions and/or installations of a single software package on a given machine, including a default version as well as several older and newer versions; and Users can easily switch to different versions or installations without having to explicitly specify different paths. With modules,

  8. Final Report- 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Broader source: Energy.gov [DOE]

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process.

  9. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, James L.

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  10. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  11. Silicon-integrated thin-film structure for electro-optic applications

    DOE Patents [OSTI]

    McKee, Rodney A.; Walker, Frederick Joseph

    2000-01-01

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  12. Cermet layer for amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J.

    1979-01-01

    A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.

  13. Jiangshan Silicon Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    China Zip: 134700 Product: Chinese metal silicon producer who is doing R&D to purify its silicon to 6N by UMG method Coordinates: 42.088902, 127.218193 Show Map Loading...

  14. Becancour Silicon Inc BSI | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: Becancour Silicon Inc (BSI) Place: St. Laurent, Quebec, Canada Zip: H4M2M4 Sector: Solar Product: Canadian supplier of silicon metal for the...

  15. Copper doped polycrystalline silicon solar cell

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space; Koliwad, Krishna M.; Daud, Taher

    1981-01-01

    Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

  16. Ultratough, Thermally Stable Polycrystalline Diamond/Silicon...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Synthesis, Characterization, and Application of Nanostructured Diamond Silicon Carbide ... INDUSTRIAL TECHNOLOGIES PROGRAM Pathways This project is focusing on reducing synthesis ...

  17. Crystalline Silicon Photovoltaics Research | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Crystalline Silicon Photovoltaics Research Crystalline Silicon Photovoltaics Research DOE supports crystalline silicon photovoltaic (PV) research and development efforts that lead to market-ready technologies. Below are a list of the projects, summary of the benefits, and discussion on the production and manufacturing of this solar technology. Background Crystalline silicon PV cells are the most common solar cells used in commercially available solar panels, representing 87% of world PV cell

  18. Enabling Thin Silicon Solar Cell Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45°, -45°, and dendritic crack patterns. The effort to shift U.S. energy reliance from fossil fuels to renewable sources has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely adopted because it significantly reduces costs;

  19. Silicon nanocrystal inks, films, and methods

    DOE Patents [OSTI]

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  20. Silicon crystal growing by oscillating crucible technique

    DOE Patents [OSTI]

    Schwuttke, G.H.; Kim, K.M.; Smetana, P.

    1983-08-03

    A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.

  1. Laser wafering for silicon solar.

    SciTech Connect (OSTI)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  2. Prealloyed catalyst for growing silicon carbide whiskers

    DOE Patents [OSTI]

    Shalek, Peter D. (Los Alamos, NM); Katz, Joel D. (Niagara Falls, NY); Hurley, George F. (Los Alamos, NM)

    1988-01-01

    A prealloyed metal catalyst is used to grow silicon carbide whiskers, especially in the .beta. form. Pretreating the metal particles to increase the weight percentages of carbon or silicon or both carbon and silicon allows whisker growth to begin immediately upon reaching growth temperature.

  3. Tandem junction amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  4. Process of preparing tritiated porous silicon

    DOE Patents [OSTI]

    Tam, Shiu-Wing

    1997-01-01

    A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

  5. Process of preparing tritiated porous silicon

    DOE Patents [OSTI]

    Tam, S.W.

    1997-02-18

    A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

  6. The development of a porous silicon nitride crossflow filter; Final report, September 1988--September 1992

    SciTech Connect (OSTI)

    1992-09-01

    This report summarizes the work performed in developing a permeable form of silicon nitride for application to ceramic crossflow filters for use in advanced coal-fired electric power plants. The program was sponsored by the Department of Energy Morgantown Energy Technology Center and consisted of a design analysis and material development phase and a filter manufacture and demonstration phase. The crossflow filter design and operating requirements were defined. A filter design meeting the requirements was developed and thermal and stress analyses were performed. Material development efforts focused initially on reaction-bonded silicon nitride material. This approach was not successful, and the materials effort was refocused on the development of a permeable form of sintered silicon nitride (SSN). This effort was successful. The SSN material was used for the second phase of the program, filter manufacture and evaluation. Four half-scale SAN filter modules were fabricated. Three of the modules were qualified for filter performance tests. Tests were performed on two of the three qualified modules in the High-Temperature, High-Pressure facility at the Westinghouse Science and Technology Center. The first module failed on test when it expanded into the clamping device, causing dust leakage through the filter. The second module performed well for a cumulative 150-hr test. It displayed excellent filtration capability during the test. The blowback pulse cleaning was highly effective, and the module apparently withstood the stresses induced by the periodic pulse cleaning. Testing of the module resumed, and when the flow of combustion gas through the filter was doubled, cracks developed and the test was concluded.

  7. Methods for producing silicon carbide fibers

    DOE Patents [OSTI]

    Garnier, John E.; Griffith, George W.

    2016-03-01

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  8. Silicon carbide fibers and articles including same

    DOE Patents [OSTI]

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  9. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  10. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y. Simon; Landry, Marc D.; Pitts, John R.

    1997-01-01

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  11. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

    1998-08-11

    A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

  12. Microelectromechanical pump utilizing porous silicon

    DOE Patents [OSTI]

    Lantz, Jeffrey W.; Stalford, Harold L.

    2011-07-19

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  13. Dispersion toughened silicon carbon ceramics

    DOE Patents [OSTI]

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  14. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, D.S.; Basore, P.A.; Schubert, W.K.

    1998-08-11

    A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

  15. Module 8- Reporting

    Broader source: Energy.gov [DOE]

    This module illustrates and defines the different cost performance reports (CPR) available for reporting earned value information.

  16. Toward quantitative modeling of silicon phononic thermocrystals

    SciTech Connect (OSTI)

    Lacatena, V.; Haras, M.; Robillard, J.-F. Dubois, E.; Monfray, S.; Skotnicki, T.

    2015-03-16

    The wealth of technological patterning technologies of deca-nanometer resolution brings opportunities to artificially modulate thermal transport properties. A promising example is given by the recent concepts of 'thermocrystals' or 'nanophononic crystals' that introduce regular nano-scale inclusions using a pitch scale in between the thermal phonons mean free path and the electron mean free path. In such structures, the lattice thermal conductivity is reduced down to two orders of magnitude with respect to its bulk value. Beyond the promise held by these materials to overcome the well-known “electron crystal-phonon glass” dilemma faced in thermoelectrics, the quantitative prediction of their thermal conductivity poses a challenge. This work paves the way toward understanding and designing silicon nanophononic membranes by means of molecular dynamics simulation. Several systems are studied in order to distinguish the shape contribution from bulk, ultra-thin membranes (8 to 15 nm), 2D phononic crystals, and finally 2D phononic membranes. After having discussed the equilibrium properties of these structures from 300 K to 400 K, the Green-Kubo methodology is used to quantify the thermal conductivity. The results account for several experimental trends and models. It is confirmed that the thin-film geometry as well as the phononic structure act towards a reduction of the thermal conductivity. The further decrease in the phononic engineered membrane clearly demonstrates that both phenomena are cumulative. Finally, limitations of the model and further perspectives are discussed.

  17. The ternary system cerium-palladium-silicon

    SciTech Connect (OSTI)

    Lipatov, Alexey; Gribanov, Alexander; Grytsiv, Andriy; Rogl, Peter; Murashova, Elena; Seropegin, Yurii; Giester, Gerald; Kalmykov, Konstantin

    2009-09-15

    Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of tau{sub 8}-Ce{sub 3}Pd{sub 4}Si{sub 4} (U{sub 3}Ni{sub 4}Si{sub 4}-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), tau{sub 16}-Ce{sub 2}Pd{sub 14}Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for tau{sub 18}-CePd{sub 1-x}Si{sub x} (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of tau{sub 5}-Ce{sub 3}PdSi{sub 3} (Ba{sub 3}Al{sub 2}Ge{sub 2}-type, Immm; a=0.41207(1), b=0.43026(1), c=1.84069(4) nm) and tau{sub 13}-Ce{sub 3-x}Pd{sub 20+x}Si{sub 6} (0<=x<=1, Co{sub 20}Al{sub 3}B{sub 6}-type, Fm3-barm; a=1.21527(2) nm). The ternary compound Ce{sub 2}Pd{sub 3}Si{sub 3} (structure-type Ce{sub 2}Rh{sub 1.35}Ge{sub 4.65}, Pmmn; a=0.42040(1), b=0.42247(1), c=1.72444(3) nm) was detected as a high-temperature compound, however, does not participate in the equilibria at 800 deg. C. Phase equilibria in Ce-Pd-Si are characterized by the absence of cerium solubility in palladium silicides. Mutual solubility among cerium silicides and cerium-palladium compounds are significant whereby random substitution of the almost equally sized atom species palladium and silicon is reflected in extended homogeneous regions at constant Ce-content such as for tau{sub 2}-Ce(Pd{sub x}Si{sub 1-x}){sub 2} (AlB{sub 2}-derivative type), tau{sub 6}-Ce(Pd{sub x}Si{sub 1-x}){sub 2} (ThSi{sub 2}-type) and tau{sub 7}-CePd{sub 2-x}Si{sub 2+x}. The crystal structures of compounds tau{sub 4}-Ce{sub a}pprox{sub 8}Pd{sub a}pprox{sub 46}Si{sub a}pprox{sub 46}, tau{sub 12}-Ce{sub a}pprox{sub 29}Pd{sub a}pprox{sub 49}Si{sub a}pprox{sub 22}, tau{sub 15}-Ce{sub a}pprox{sub 22}Pd{sub a}pprox{sub 67}Si{sub a}pprox{sub 11}, tau{sub 17}-Ce{sub a}pprox{sub 5}Pd{sub a}pprox{sub 77}Si{sub a}pprox{sub 18} and tau{sub 18}-CePd{sub 1-x}Si{sub x} (xapprox0.1) are still unknown. - Abstract: Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction, metallography, SEM and EMPA techniques on about 130 alloys. 18 ternary compounds were observed. Display Omitted

  18. Modulating lignin in plants

    DOE Patents [OSTI]

    Apuya, Nestor; Bobzin, Steven Craig; Okamuro, Jack; Zhang, Ke

    2013-01-29

    Materials and methods for modulating (e.g., increasing or decreasing) lignin content in plants are disclosed. For example, nucleic acids encoding lignin-modulating polypeptides are disclosed as well as methods for using such nucleic acids to generate transgenic plants having a modulated lignin content.

  19. Integrating Module - NEMS Documentation

    Reports and Publications (EIA)

    2014-01-01

    Provides an overview of the complete National Energy Modeling System (NEMS) model, and includes brief descriptions of the modules with which the Integrating Module interacts. The emphasis and focus, however, is on the structure and function of the Integrating Module of NEMS.

  20. Epitaxial growth of silicon for layer transfer

    DOE Patents [OSTI]

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.