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Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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1

ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY M.A. Contreras, 2  

E-Print Network [OSTI]

) photovoltaic technology is motivated primarily by the potential to enhance solar cell current generationZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY 1 M.A. Contreras, 2 T. Nakada, 2 M of 18.6% for Cu(In,Ga)Se2 solar cells that incorporate a ZnS(O,OH) buffer layer as an alternative to Cd

Sites, James R.

2

Forestry Policies (Georgia)  

Broader source: Energy.gov [DOE]

Georgia's Forests are managed by the Georgia Forestry Commission. In 2009 the Commission completed a statewide assessment of biomass resources:

3

Georgia Hazardous Site Response Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Hazardous Site Response Act is Georgia’s version of Superfund. The Act provides for graduated fees on the disposal of hazardous waste, a trust fund to enable the EPD to clean up or plan...

4

Georgia Groundwater Use Act (Georgia)  

Broader source: Energy.gov [DOE]

The purpose of the Georgia Groundwater Use Act is to establish procedures to be followed to obtain a permit to withdraw, obtain or utilize groundwater and for the submission of information...

5

Georgia Radiation Control Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Radiation Control Act is designed to prevent any associated harmful effects upon the environment or the health and safety of the public through the institution and maintenance of a...

6

Georgia Utility Facility Protection Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Utility Facility Protection Act (GUFPA) was established to protect the underground utility infrastructure of Georgia. GUFPA mandates that, before starting any mechanized digging or...

7

Georgia Geriatric Education Center  

E-Print Network [OSTI]

Georgia Geriatric Education Center © Photography courtesy of the U.S. Administration on Aging. Georgia Geriatric Education Center Latestresourcesandtrainingforbestpracticesingerontologyandgeriatrics. The Georgia Geriatric Education Center (GGEC) is a statewide effort designed to help you access the latest

Arnold, Jonathan

8

Table 2 -Lime use and practices on Corn, major producing states, 2001 CO GA IL IN IA KS KY MI MN MO NE NY NC ND OH PA SD TX WI Area  

E-Print Network [OSTI]

Table 2 - Lime use and practices on Corn, major producing states, 2001 CO GA IL IN IA KS KY MI MN.7 Table 2 - Lime use and practices on Corn, major producing states, 2000 CO IL IN IA KS KY MI MN MO NE NY use and practices on Corn, major producing states, 1999 CO IL IN IA KS KY MI MN MO NE NC OH SD TX WI

Kammen, Daniel M.

9

Georgia Erosion and Sedimentation Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Erosion and Sedimentation Act (GESA) is designed to protect vegetated buffers. GESA establishes a minimum undisturbed, vegetated buffer of 25 feet for all streams in Georgia (measured...

10

Georgia Water Quality Control Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Water Quality Control Act (WQCA) is a set of environmental regulations and permitting requirements that comply with the federal Clean Water Act. The Georgia Water Quality Control Act...

11

Georgia Nuclear Energy Financing Act (Georgia)  

Broader source: Energy.gov [DOE]

The “Georgia Nuclear Energy Financing Act,” amends existing Georgia law to allow a utility to recover from its customers the costs of financing associated with the construction of a nuclear plant...

12

Georgia Water Resources Institute Annual Technical Report  

E-Print Network [OSTI]

, and lake associations. At the national level, GWRI has collaborative efforts with the California Energy with support from the U.S. Agency for International Development, World Bank, Food and Agriculture Organization Prices in Georgia" USGS 104B/GWRI Project, Susanna Ferriera # 2011GA275B #1266663 (3) Impact of Upstream

13

Georgia Underground Storage Tank Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Underground Storage Act (GUST) provides a comprehensive program to prevent, detect, and correct releases from underground storage tanks (“USTs”) of “regulated substances” other than...

14

Georgia Tech Dangerous Gas  

E-Print Network [OSTI]

1 Georgia Tech Dangerous Gas Safety Program March 2011 #12;Georgia Tech Dangerous Gas Safety.......................................................................................................... 5 6. DANGEROUS GAS USAGE REQUIREMENTS................................................. 7 6.1. RESTRICTED PURCHASE/ACQUISITION RULES: ................................................ 7 7. FLAMMABLE GAS

Sherrill, David

15

Cu(In,Ga)Se{sub 2} absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics  

SciTech Connect (OSTI)

Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se{sub 2} (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5??m-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.

Leonard, E.; Arzel, L.; Tomassini, M.; Barreau, N., E-mail: nicolas.barreau@univ-nantes.fr [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Zabierowski, P. [Faculty of Physics, Warsaw University of Technology, Koszykowa 75, PL 00-662 Warsaw (Poland); Fuertes Marrón, D. [Instituto de Energía Solar–ETSIT, Technical University of Madrid, Ciudad Universitaria s.n., 28040 Madrid (Spain)

2014-08-21T23:59:59.000Z

16

Georgia Safe Dams Act of 1978 (Georgia)  

Broader source: Energy.gov [DOE]

The purpose of the Georgia Safe Dams Act is to provide regulation, inspection and permitting of dams to the State. The Director of the Environmental Protection Division (EPD) is responsible for...

17

Georgia Surface Mining Act of 1968 (Georgia)  

Broader source: Energy.gov [DOE]

This law regulates all surface mining in Georgia, including the coastal zone. It includes provisions to “advance the protection of fish and wildlife and the protection and restoration of land,...

18

Georgia Air Quality Control Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Air Quality Control Act (AQCA) is a set of environmental regulations, permitting requirements, and air quality standards that control the amount of pollutants emitted and who emits them...

19

Shore Protection Act (Georgia)  

Broader source: Energy.gov [DOE]

The Shore Protection Act is the primary legal authority for protection and management of Georgia's shoreline features including sand dunes, beaches, sandbars, and shoals, collectively known as the...

20

Protection of Tidewaters (Georgia)  

Broader source: Energy.gov [DOE]

The Protection of Tidewaters Act establishes the State of Georgia as the owner of the beds of all tidewaters within the State, except where title by a private party can be traced to a valid British...

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Georgia Underground Gas Storage Act of 1972 (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Underground Gas Storage Act, which permits the building of reserves for withdrawal in periods of peak demand, was created to promote the economic development of the State of Georgia and...

22

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2011 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements of Georgia Research Foundation, Inc. Athens, Georgia Compliance We have audited the University of Georgia

Hall, Daniel

23

Georgia Comprehensive Solid Waste Management Act of 1990 (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Comprehensive Solid Waste Management Act (SWMA) of 1990 was implemented in order to improve solid waste management procedures, permitting processes and management throughout the state. ...

24

Georgia Oil and Gas Deep Drilling act of 1975 (Georgia)  

Broader source: Energy.gov [DOE]

Georgia's Oil and Gas and Deep Drilling Act regulates oil and gas drilling activities to provide protection of underground freshwater supplies and certain "environmentally sensitive" areas. The...

25

University of Georgia 2020 Strategic Plan  

E-Print Network [OSTI]

......................................................................34 Appendix E. University of Georgia Funding Source Trend Summary..........................................35University of Georgia 2020 Strategic Plan Building on Excellence October 30, 2012 #12;Building...............................................................................................................................................1 The Mission of the University of Georgia

Arnold, Jonathan

26

Georgia Hazardous Waste Management Act  

Broader source: Energy.gov [DOE]

The Georgia Hazardous Waste Management Act (HWMA) describes a comprehensive, Statewide program to manage hazardous wastes through regulating hazardous waste generation, transportation, storage,...

27

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2010 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements Foundation, Inc. Athens, Georgia Compliance We have audited the University of Georgia Research Foundation

Hall, Daniel

28

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2009 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements of Directors University of Georgia Research Foundation, Inc. Athens, Georgia Compliance We have audited

Hall, Daniel

29

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2010 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents Page Report of Independent Auditors 2 of Georgia Research Foundation, Inc. Athens, Georgia We have audited the accompanying statement of net assets

Hall, Daniel

30

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2011 #12;2 UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents Page Report of Independent Auditors of Directors University of Georgia Research Foundation, Inc. Athens, Georgia We have audited the accompanying

Arnold, Jonathan

31

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2012 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements Circular A-133 To the Board of Directors University of Georgia Research Foundation, Inc. Athens, Georgia

Hall, Daniel

32

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2012 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents 2 Page Report of Independent Auditors of Directors University of Georgia Research Foundation, Inc. Athens, Georgia We have audited the accompanying

Arnold, Jonathan

33

2014 Race to Zero Student Design Competition: Georgia Institute...  

Broader source: Energy.gov (indexed) [DOE]

Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia...

34

GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges  

E-Print Network [OSTI]

, Georgia State University, Atlanta, Georgia 30303 S. G. Matsik NDP Optronics LLC, Mableton, Georgia 30126 A

Perera, A. G. Unil

35

Georgia Cities Foundation- Green Communities Revolving Loan Fund (Georgia)  

Broader source: Energy.gov [DOE]

The Green Communities Fund is a revolving loan fund providing low-interest loans to businesses located within the city limits of any city in Georgia. Loans are available for existing as well as new...

36

Georgia Interfaith Power and Light- Energy Improvement Grants (Georgia)  

Broader source: Energy.gov [DOE]

Georgia Interfaith Power and Light (GIPL) offers grants of up to $10,000 to congregations or faith-based communities, including faith-based schools. Grant funds may be used for energy conservation...

37

Marketers' Certificate of Authority (Georgia)  

Broader source: Energy.gov [DOE]

The Marketers' Certificate of Authority is mandated by the Georgia Public Service Commission (PSC), and is a part of the Natural Gas Competition and Reregulation Act. It requires that any company...

38

Georgia politics, 1732-1775  

E-Print Network [OSTI]

1733 law forbade the "Visit, frequent haunt, Trade to Traffick or Barter" with the Indians of Georgia unless duly licensed by the Georgia covernment. Prescribed punishment for violators of the law was a one hundred pounds sterling fine. Goods... perfected his chinaware for sale. Everyone, including Stephens, wished him well in his new production, if for no other reason than it would be of benefit to the prosperity of the struggling colony. Writing to the Trustees, however, Stephens ex- pressed...

Dennis, Joseph Lloyd

1967-01-01T23:59:59.000Z

39

Georgia Green Loans Save and Sustain Program  

Broader source: Energy.gov [DOE]

Georgia Green Loans, a non-profit microlending agency, offers funding to "green" businesses using funding from a Georgia Environmental Finance Authority (GEFA) grant. The GEFA grant is based on...

40

BIOLOGY GRADUATE STUDENT SOURCEBOOK GEORGIA SOUTHERN UNIVERSITY  

E-Print Network [OSTI]

1 BIOLOGY GRADUATE STUDENT SOURCEBOOK GEORGIA SOUTHERN UNIVERSITY GENERAL TABLE OF CONTENTS Chapter 1: Introduction to the Biology Department.............................................5 Chapter 2 #12;2 BIOLOGY GRADUATE STUDENT SOURCEBOOK GEORGIA SOUTHERN UNIVERSITY DETAILED TABLE OF CONTENTS

Hutcheon, James M.

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Georgia Water Resources Institute Annual Technical Report  

E-Print Network [OSTI]

dissemination, and works collaboratively with various local, state, and federal agencies. These include #35334). (5) Tidal Streams: A Renewable Energy Source for Georgia , Kevin Haas, Georgia Institute, environmental organizations, lake associations, California Energy Commission, California Department of Water

42

MO. REV. MO. MAGNETIC CLEANLINESS GUIDELINES  

E-Print Network [OSTI]

in the ALSEP Systems Engineering Magnetic Cleanliness File. #12;NO. REV. NO. ATM-865 MAGNETIC CLEANLINESS Engineering Magnetic Cleanliness File. #12;MO. REV. MO. ATM-865 MAGNETIC CLEANLINESS GUIDELINES PAGE 1 Of 3 DATE 4/6/70 The purpose

Rathbun, Julie A.

43

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. COMPLIANCE REPORTS For the Year Ended June 30, 2013 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. TABLE OF CONTENTS Financial Statements Foundation, Inc. Athens, Georgia Report on Compliance for Each Major Federal Program We have audited

Arnold, Jonathan

44

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2009 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents Page Report of Independent Auditors 2 Standards 45 #12;Report of Independent Auditors Board of Directors University of Georgia Research Foundation

Hall, Daniel

45

Georgia gulf widens the loop  

SciTech Connect (OSTI)

In describing Georgia Gulf's experience with Responsible Care, president and CEO Jerry Satrum turns first to the pollution prevention code. Noting that the $838-million/year commodities and vinyl resins producer is not on the list of companies with the highest reportable emissions, Satrum says that Georgia Gulf has, nonetheless, reduced emissions from 4.5 million tons in 1987 to 1 million tons. The waste minimization element of pollution prevention has also had a profound effect on a compelling challenge to the company - getting its smaller operations into the loop on Responsible Care. It also brings to bear the product stewardship code - waste and materials management programs at Georgia Gulf's three vinyl compounding operations address waste issues for suppliers and customers.

Mullin, R.

1992-12-09T23:59:59.000Z

46

Terahertz absorption in AlGaAs films and detection using heterojunctions  

E-Print Network [OSTI]

a Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA b NDP Optronics, LLC-mail address: uperera@gsu.edu (A.G.U. Perera). 1 Also at NDP Optronics LLC. Infrared Physics & Technology 47

Perera, A. G. Unil

47

Georgia Southern University Information Technology  

E-Print Network [OSTI]

Georgia Southern University Information Technology Organization Chart 2013-2014 FINAL: September 18, 2013 R\\Work\\Common:\\OrgCharts\\Rev2014\\ Information Technology \\CIO Produced: Strategic Research of the groups of units reporting there. President Vice President for Information Technology and Chief

Hutcheon, James M.

48

Georgia Tech Vehicle Acquisition and  

E-Print Network [OSTI]

1 2012 Georgia Tech 10/10/2012 Vehicle Acquisition and Disposition Manual #12;2 Vehicle Procedures Regardless of value, all vehicles should be included in this process. Acquisition of a Vehicle 1. Contact Fleet Coordinator to guide the departments in the purchasing process for all vehicles. 2. Fill out

49

Livestock & Poultry --The Largest Segment of Georgia Agriculture  

E-Print Network [OSTI]

Crops* 40% Poultry 52% Livestock & Dairy 8% Poultry -- The Largest Segment of Georgia Agriculture Percent Total by Commodity Prepared by: Georgia Poultry Federation Source: University of Georgia, 2010 Pounds Produced: 1970 ­ 2011 Prepared by: Georgia Poultry Federation From: Georgia Agricultural

Navara, Kristen

50

Georgia Biofuel Directory A directory of Georgia industries that use biofuels.  

E-Print Network [OSTI]

Georgia Biofuel Directory · A directory of Georgia industries that use biofuels. · Completed in May _________________________________________________________________ 3 Biofuels_____________________________________________________________________ 4 Biofuel Use in Georgia that Burn Self-Generated Biofuels as of May 2003__ 4 Chart 1.0 Biofuel Use from Contacted

51

Petroleum Pipeline Eminent Domain Permit Procedures (Georgia)  

Broader source: Energy.gov [DOE]

The Petroleum Pipeline Eminent Domain Permit Procedures serve to protect Georgia's natural and environmental resources by requiring permits be issued by the Director of the Environmental Protection...

52

Georgia Power- Commercial Energy Efficiency Program  

Broader source: Energy.gov [DOE]

Georgia Power offers rebates to business customers who pay taxes and non-tax paying commercial customers. Incentives are available for lighting, HVAC, food service equipment, refrigeration...

53

Renewable and Non-Renewable Resources Tariff RNR-7 (Georgia)  

Broader source: Energy.gov [DOE]

The Renewable and Non-Renewable Resource tariff is authorized by the Georgia Public Service Commission (PSC), which requires that the investor owned utility, Georgia Power Company, purchase...

54

Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...  

Energy Savers [EERE]

Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee Laboratory to Highlight Administration Support for Nuclear Energy Energy Secretary to Visit Georgia Nuclear...

55

Sec. Moniz to Georgia, Energy Department Scheduled to Close on...  

Energy Savers [EERE]

to Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close...

56

Georgia Water Resources Institute Annual Technical Report  

E-Print Network [OSTI]

) INFORM: Integrated Forecast and Reservoir Management System for Northern California, Aris Georgakakos PI Water Resources Institute GWRI mission is to help improve water resources management in Georgia, the US planning and management framework for Georgia. The GWRI planning tools are used to (i) determine flow

57

Articulated Swimming Creatures Georgia Institute of Technology  

E-Print Network [OSTI]

to swim straight and stay within a given energy budget. Our creatures can perform path following by firstArticulated Swimming Creatures Jie Tan Georgia Institute of Technology Yuting Gu Greg Turk Georgia to creating realistic swimming be- havior for a given articulated creature body. The two main com- ponents

Turk, Greg

58

Recovery Act State Memos Georgia  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L dDepartment ofList?Department09 SectionGeorgia For questions about

59

Synthesis and properties of green phosphor SrGa2S4:Eu2 emission displays by an environmentally clean technique  

E-Print Network [OSTI]

by an environmentally clean technique Y.D. Jianga , G. Villalobosa , J.C. Souriaua , H. Parisa , C.J. Summersa , Z.L. Wangb,* a Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA b School of Materials Science and Engineering, Georgia

Wang, Zhong L.

60

Capacitance hysteresis in GaN/AlGaN heterostructures L. E. Byrum,1  

E-Print Network [OSTI]

Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA 2 NDP Optronics

Matsik, Steven G.

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Maintenance expo................... 3 Georgia visitors....................... 3  

E-Print Network [OSTI]

Inside · Maintenance expo................... 3 · Georgia visitors....................... 3 · Fluid Power Center ................ 4 · CTS services Web page .......... 4 A monthly report on transportation transformation of nation's transportation policy The results of a 13-month study led by David Kittelson

Minnesota, University of

62

Central Georgia EMC- Photovoltaic Rebate Program  

Broader source: Energy.gov [DOE]

In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

63

Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors  

E-Print Network [OSTI]

, Georgia State University, Atlanta, Georgia 30303, USA; bNDP Optronics LLC, Mableton, Georgia 30126, USA; c

Dietz, Nikolaus

64

E-Print Network 3.0 - atlanta georgia metropolitan Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: University; Atlanta, Georgia September 1996 - Assistant Professor of Political Science Emory University... ; Atlanta, Georgia September 1993 - August 1996 On...

65

NOTICE OF FACULTY VACANCY IN ART EDUCATION The Lamar Dodd School of Art at The University of Georgia invites applications for the  

E-Print Network [OSTI]

NOTICE OF FACULTY VACANCY IN ART EDUCATION The Lamar Dodd School of Art at The University Education Search Committee Lamar Dodd School of Art The University of Georgia 270 River Rd. Athens, Ga in regard to both outdoor and urban activities (www.exploregeorgia.org). The Lamar Dodd School of Art

Arnold, Jonathan

66

atlanta georgia usa: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

values SECURING AMERICA'S FUTURE 12;0 1Georgia Tech Research Institute Annual Report Bennett, Gisele 9 School of Biology Atlanta, Georgia 30332-0230 USA Biology and Medicine...

67

The University of Georgia Center for Agribusiness and Economic Development  

E-Print Network [OSTI]

and Environmental Sciences An Evaluation of Direct and Indirect Economic Losses Incurred by Georgia FruitThe University of Georgia Center for Agribusiness and Economic Development College of Agricultural ............................................................................................................................................................ 3 Economic Consequences

Scott, Robert A.

68

Sensible Solar Fueling Energy Revolution in Georgia | Department...  

Broader source: Energy.gov (indexed) [DOE]

Sensible Solar Fueling Energy Revolution in Georgia Sensible Solar Fueling Energy Revolution in Georgia May 14, 2010 - 3:35pm Addthis Joshua DeLung During his recent commencement...

69

GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY  

E-Print Network [OSTI]

and safety hazards, and encourage the reporting of hazards and safety-related incidents; work cooperativelyGEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY Ratified by the Institute Council on Environmental Health and Safety August 2008 POLICY Georgia Institute of Technology (Georgia

Das, Suman

70

Comparison of Georgia and US Per Capita Fruit, Vegetable, Livestock, and Poultry Consumption, 2011 Estimated 2011 Georgia  

E-Print Network [OSTI]

Comparison of Georgia and US Per Capita Fruit, Vegetable, Livestock, and Poultry Consumption, 2011 Capita) Data System 4 Value= Per capita consumption (column 3) multiplied by Georgia Population (9 Estimated 2011 Georgia Population (9,687,653)1 2011 Farm Gate Production (lbs)2 2010 Per Capita US

Scott, Robert A.

71

Georgia Power- Residential Solar and Heat Pump Water Heater Rebate (Georgia)  

Broader source: Energy.gov [DOE]

Georgia Power customers may be eligible for rebates up to $250 each toward the installation costs of a 50 gallon or greater solar water heater or heat pump water heater. The solar water heater or...

72

Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin "lms  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin, As ngstro( m Solar Center, P.O. Box 534, SE-751 21 Uppsala, Sweden Department of Materials Science Mo thin "lms used as back contacts for Cu(In,Ga)Se solar cells. The samples were analysed

Rockett, Angus

73

Georgia Southern University Business and Finance  

E-Print Network [OSTI]

Georgia Southern University Business and Finance Organization Chart 2013-2014 FINAL: September 18, 2013 R:\\Work\\Common\\Org Charts\\Rev2014\\ Business & Finance Produced: Strategic Research & Analysis/KBM President Vice President for Business and Finance Associate Vice President for Finance Associate Vice

Hutcheon, James M.

74

The University of Georgia Teaching Academy  

E-Print Network [OSTI]

The University of Georgia Teaching Academy Mission Statement The mission of the Academy is to promote and celebrate excellence in teaching and to foster learning through inquiry. Goals The Academy Engineering David S. Williams, Honors Program Teaching Academy Induction Dinner and Ceremony Membership Class

Arnold, Jonathan

75

The University of Georgia Senior Vice President  

E-Print Network [OSTI]

directly to the Senior Vice President. In Summer 2011--in response to the recent development to the University of Georgia). These factors included, among others: decreasing state support; increased demands historic campus; and hiring, retention, compression and morale issues compounded by the inability

Arnold, Jonathan

76

2013 GEORGIA PEST MANAGEMENT HANDBOOK Commercial Edition  

E-Print Network [OSTI]

Pathology The University of Georgia Cooperative Extension College of Agricultural and Environmental Sciences, application, and safe use of pest control chemicals. The Handbook has recommendations for pest control information on control of insects, plant diseases, and weeds is available in bulletins and circulars published

Arnold, Jonathan

77

Georgia Water Resources Institute Annual Technical Report  

E-Print Network [OSTI]

the sponsorship of the US EPA, GWRI performed technical analysis of a draft ACT compact. Assessment results were of Engineers, and Southeastern Power Administration) and the ACT-ACF Federal Commissioner. Assessment resultsGeorgia Water Resources Institute Annual Technical Report FY 2000 Introduction In Fiscal Year 2000

78

IEEE Energy2030 Atlanta, Georgia, USA  

E-Print Network [OSTI]

(IPS), and can consist of loads, energy sources, and energy storage. The desired result of the proposed architecture is to produce a grid network designed for distributed renewable energy, prevalent energy storageIEEE Energy2030 Atlanta, Georgia, USA 17-18 November 2008 An Architecture for Local Energy

Ratnasamy, Sylvia

79

EA-1963: Elba Liquefaction Project, Savannah, Georgia  

Broader source: Energy.gov [DOE]

The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERC’s eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

80

Georgia Institute of Technology Fire Watch Procedures  

E-Print Network [OSTI]

-385-1000) Area II (404-385-2000) Area III (404-385-3000) Area IV (404-385-4000) Area V (404-385-5000) II. Fire Marshal 404-894-2990 2. Georgia Tech Police Department 404-894-2500 3. Facilities-Area 1 (404 the fire watch is in effect. 2. Patrol the entire area affected by the service outage every 30 minutes

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Alternative Fuels Data Center: Georgia Information  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data Center Home Page onAlternativeConnecticutEthanolNatural GasFloridaGeorgia

82

Central Georgia EMC- Residential Energy Efficiency Rebate Program  

Broader source: Energy.gov [DOE]

Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes. This year,...

83

Seth Marder Title: Regent's Professor, Georgia Power Chair in Energy Efficiency  

E-Print Network [OSTI]

Seth Marder Title: Regent's Professor, Georgia Power Chair in Energy Efficiency University's Professor, the Georgia Power Chair of Energy Efficiency, and Professor of Chemistry and Materials Science

Garmestani, Hamid

84

The Gerontology Institute at Georgia State University invites applications for  

E-Print Network [OSTI]

to external funding. Georgia State University is the Southeast's leading urban research institution. More thanThe Gerontology Institute at Georgia State University invites applications for a tenure. This position is affiliated with the University's Partnership in Urban Health Research (http

Arnold, Jonathan

85

URBAN/INDUSTRIAL LAND PRIVATIZATION The Republic of Georgia  

E-Print Network [OSTI]

reviewed overall market reform prospects in the Republic of Georgia. The findings indicate that Georgia's market reform lags behind several other New Independent State (NIS) countries. This is largely due' support for market reform initiatives. With the ethnic conflict under control, the USAID assessment team

Onsrud, Harlan J.

86

Water Management Laws in Georgia Ciannat M. Howett  

E-Print Network [OSTI]

for the Northern District of Georgia (see State of Georgia v. United States Army Corps of Engineers et al., 2.01-CV Sharing Agreements/Interstate Compacts: The Example of the Tri-state Water Negotiations As water resources, states across the nation ­ even on the relatively water-rich east coast ­ have been focusing more

Rosemond, Amy Daum

87

Environmental radionuclide distribution in Georgia after the Chernobyl accident  

SciTech Connect (OSTI)

Atmospheric Chernobyl-released radioactivity, assessed at about 2 x 10{sup 18} Bq, caused global environmental contamination. Contaminated air masses appeared in the Transcaucasian region in early May, 1986. Rains that month promoted intense radionuclide deposition all over Georgia. The contamination level of western Georgia considerably exceeded the contamination level of eastern Georgia. The Black Sea coast of Georgia suffered from the Chernobyl accident as much as did strongly contaminated areas of the Ukraine and Belarus`. Unfortunately, governmental decrees on countermeasures against the consequences of the Chernobyl accident at that time did not even refer to the coast of Georgia. The authors observed the first increase in radioactivity background in rainfall samples collected on May 2, 1986, in Tbilisi. {gamma}-Spectrometric measurements of aerosol filters, vegetation, food stuffs, and other objects, in addition to rainfall, persistently confirmed the occurrence of short-lived radionuclides, including {sup 131}I. At first, this fact seemed unbelievable, because the Chernobyl accident had occurred only 4-5 days earlier and far from Georgia. However, these arguments proved to be faulty. Soon, environmental monitoring of radiation in Georgia became urgent. Environmental radionuclide distribution in Georgia shortly after the Chernobyl accident, as well as the methods of analysis, are reported in this paper.

Mosulishvili, L.M.; Shoniya, N.I.; Katamadze, N.M. [Institute of Physics, Tbilisi, Georgia (Russian Federation)] [and others

1994-01-01T23:59:59.000Z

88

Categorical Exclusion Determinations: Georgia | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-Up fromDepartmentTie Ltd:JuneNovember 26, 20149 CategoricalColoradoof EnergyGeorgia

89

Alamo, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectricEnergy InformationTuri BiomassWheeler County, Georgia. It falls under

90

GEORGIA GENERAL ASSEMBLY 4/2010  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor's note:ComputingFusionSan Ramon,GlobalU.S.GEORGIA

91

Adel, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 East 300 SouthWaterBrasil Jump to:Iowa ASHRAEAddis, LA) JumpAddress (SmartGeorgia:

92

Americus, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 East 300Algoil JumpAltergy SystemsAmerican EnergyAmericus, Georgia: Energy Resources

93

Chamblee, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Information on PV2009 |Chamblee, Georgia: Energy Resources Jump to:

94

U.S. Hydropower Resource Assessment - Georgia  

SciTech Connect (OSTI)

The U.S. Department of Energy is developing an estimate of the undeveloped hydropower potential in the United States. For this purpose, the Idaho National Engineering and Environmental Laboratory developed a computer model called Hydropower Evaluation Software (HES). HES measures the undeveloped hydropower resources available in the United States, using uniform criteria for measurement. The software was developed and tested using hydropower information and data provided by the Southwestern Power Administration. It is a menu-driven program that allows the personal computer user to assign environmental attributes to potential hydropower sites, calculate development suitability factors for each site based on the environmental attributes present, and generate reports based on these suitability factors. This report describes the resource assessment results for the State of Georgia.

A. M. Conner; B. N. Rinehart; J. E. Francfort

1998-10-01T23:59:59.000Z

95

Diverse Power- Energy Efficient Existing Homes Rebate Program (Georgia)  

Broader source: Energy.gov [DOE]

Diverse Power is a member-owned electric cooperative that provides electric service to customers in Troup, Harris, Heard, Meriwether, Muscogee and Coweta counties in Georgia. Diverse Power offers a...

96

Georgia: Data Center and Historic Municipal Building Go Green...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can consume 100 to 200 times more...

97

Jackson EMC- Residential Energy Efficiency Rebate Program (Georgia)  

Broader source: Energy.gov [DOE]

Jackson Electric Membership Corporation (EMC) is an electric cooperative that serves 194,000 customers in 10 counties in northeast Georgia. To encourage its residential customers to adopt energy...

98

EECBG Success Story: Georgia County Turning Industrial and Farm...  

Broader source: Energy.gov (indexed) [DOE]

Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook EECBG Success Story: Atlanta Suburb Greases the Path to Savings...

99

EcoCAR Challenge Georgia Institute of Technology  

E-Print Network [OSTI]

EcoCAR Challenge Georgia Institute of Technology Outreach Report Date: 11/09/2010 #12;11/9/2010 2 plan on leveraging our media contacts, GM sponsors, and Atlanta Clean Cities sponsors to potentially

Houston, Paul L.

100

City of Ellaville, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company) JumpDoerun, GeorgiaElectra Place:Ellaville, Georgia

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Mo-Si-B Alloy Development  

SciTech Connect (OSTI)

Mo-Si-B silicides consisting of the phases {alpha}-Mo (Mo solid solution), Mo{sub 3}Si, and Mo{sub 5}SiB{sub 2} have melting points on the order of 2000 C and have potential as ultra-high temperature structural materials. Mo-Si-B alloys can be processed such that the {alpha}-Mo is present in the form of isolated particles in a silicide matrix, or as a continuous matrix ''cementing'' individual silicide particles together. The latter microstructure is similar to that of WC-Co hard metals. This paper focuses on the relationship between the topology as well as scale of the microstructure of Mo-Mo{sub 3}Si-Mo{sub 5}SiB{sub 2} alloys, and their creep strength and fracture toughness. For example, the creep strength of Mo-Si-B alloys is improved by reducing the {alpha}-Mo volume fraction and by making the {alpha}-Mo phase discontinuous. The fracture toughness is improved by increasing the {alpha}-Mo volume fraction and by making the {alpha}-Mo phase continuous. Room temperature stress intensity factors as high as 21 MPa m{sup 1/2} were obtained. The room temperature fracture toughness of Mo-Si-B alloys can also be improved by microalloying with Zr. The room temperature ductility of Mo itself can be improved by adding MgAl{sub 2}O{sub 4} spinel particles suggesting yet another way to improve the ductile phase toughening of Mo-Si-B alloys.

Schneibel, J.H.; Kruzie, J.J.; Ritchie, R.O.

2003-04-24T23:59:59.000Z

102

Connect, Collaborate, Commercialize There are many different opportunities for engagement and technology transfer at Georgia  

E-Print Network [OSTI]

and technology transfer at Georgia Tech. Working together we can tailor a relationship unique to your company

Garmestani, Hamid

103

UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA  

E-Print Network [OSTI]

UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA APPLICATION TO MAKE LATE's Office UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA APPLICATION TO MAKE LATE's Office UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA APPLICATION TO MAKE LATE

Arnold, Jonathan

104

A Spatial Simulation Model of Land Use Changes in a Piedmont County in Georgia  

E-Print Network [OSTI]

A Spatial Simulation Model of Land Use Changes in a Piedmont County in Georgia Monica Goigel Turner* Institute of Ecology University of Georgia Athens, Georgia ABSTRACT A spatial simulation model was developed be explicitly included in simulation models to gain an understanding of landscape level phenomena, and at least

Turner, Monica G.

105

Electrodeposition of high Mo content Ni-Mo alloys under forced convection  

SciTech Connect (OSTI)

Bright, compact, adherent, metallic Ni-Mo alloys, containing over 48 wt % Mo have been electrodeposited from an aqueous solution. The Mo content, which is the highest achieved so far in induced codeposition of Ni-Mo, was determined by X-ray fluorescence spectroscopy. The absence of oxygen was verified by Auger electron spectroscopy. Electrodeposition experiments were performed on rotating cylinder electrodes and demonstrate that the Mo content of the alloy is strongly influenced by convective transport.

Podlaha, E.J.; Matlosz, M.; Landolt, D. (Ecole Polytechnique Federale de Lausanne, Lausanee (Switzerland). Dept. des materiaux)

1993-10-01T23:59:59.000Z

106

E-Print Network 3.0 - atlanta ga usa Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Physics and Astronomy, Georgia State University, Atlanta, Georgia... 30303, USA 3 NDP Optronics, Mableton, Georgia 30126, USA *Corresponding author: wzshen... -band imaging device,...

107

Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 EastMaine: Energy Resources JumpAspen Aerogels05. It is640623°Atlanta, GA) Jump to:

108

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

household (2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to...

109

Pulp and Paper Corrosion Symposium Georgia Tech Renewable Bioproducts Institute  

E-Print Network [OSTI]

1 Pulp and Paper Corrosion Symposium Georgia Tech Renewable Bioproducts Institute November 2014 Digester Corrosion Margaret Gorog Federal Way, WA 2 · Chips plus a mixture of white and black liquor · The pulp is then blown from the bottom of the vessel into a blow tank · Corrosion occurs during filling

Das, Suman

110

POLICY REGARDING SERVICE ANIMAL ACCESS TO UNIVERSITY OF GEORGIA FACILITIES,  

E-Print Network [OSTI]

POLICY REGARDING SERVICE ANIMAL ACCESS TO UNIVERSITY OF GEORGIA FACILITIES, PROGRAMS, SERVICES AND ACTIVITIES This policy ("Policy") is to implement federal and state laws regarding access for service animals, for purposes of this Policy, "Service Animals" are collectively defined to include those that are defined

Arnold, Jonathan

111

School of Earth and Atmospheric Sciences Georgia Institute of Technology  

E-Print Network [OSTI]

School of Earth and Atmospheric Sciences Georgia Institute of Technology Strategic Plan March 1 opportunities. Vision The vision of the School of Earth and Atmospheric Sciences is: To lead in innovative research and educate the future leaders in earth and atmospheric sciences for the 21st century, within

Weber, Rodney

112

Ambient habitat noise and vibration at the Georgia Aquarium  

E-Print Network [OSTI]

Ambient habitat noise and vibration at the Georgia Aquarium P. M. Scheifele Department significant levels of background noise due to pumps and motors. This noise, together with pool architecture to quantify the ambient noise levels in the water from machine vibration and from in-air performance speaker

Johnson, Michael T.

113

Georgia Institute of Technology For more information contact  

E-Print Network [OSTI]

, 2007) -- We feel it at the pump. Fuel prices are at record highs and so is the demand for alternative Biofuels, the Georgia Research Alliance and one of the U.S. Department of Energy's new BioEnergy Research in the United States, but concerns exist about the future price and availability of corn as a food crop if it

Nair, Sankar

114

North Druid Hills, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy ResourcesLoading map...(Utility Company) Jump to:City)Norristown,BraddockDruid Hills, Georgia: Energy

115

Gresham Park, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio:Greer County is a county in Oklahoma. Its FIPSGresham Park, Georgia:

116

Henry County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio:Greer CountyCorridorPartImages JumpHendryHenry County, Georgia

117

Middle Georgia El Member Corp | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar Powerstories onFocus Area Energy Efficiency, RenewableMiddle Georgia El Member

118

Monroe County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 -Energieprojekte3 Climate Zone Subtype A. Places in Monroe County, Georgia Culloden,

119

Meriwether County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 -Energieprojekte GmbH Jump to: navigation, search Name: MeridianCounty, Georgia:

120

Georgia - Seds - U.S. Energy Information Administration (EIA)  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:SeadovCooperativeA2. World liquids consumptionEmail:PlantshortshortlongGeorgia - Seds -

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Putnam County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: EnergyPotentialUrbanUtilityScalePVCapacityPulaski County, Kentucky:County, Georgia: Energy Resources Jump to:

122

Quitman County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: EnergyPotentialUrbanUtilityScalePVCapacityPulaski County, Kentucky:County, Georgia:Quay9159785°Quioque,

123

City of Acworth, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpenWendeGuoCatalystPathways CalculatorinAcworth, Georgia (Utility

124

City of Adel, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpenWendeGuoCatalystPathways CalculatorinAcworth, Georgia

125

City of Doerun, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company) JumpDoerun, Georgia (Utility Company) Jump to:

126

City of Fairburn, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company) JumpDoerun, GeorgiaElectraElsmore,

127

City of Griffin, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company)Galion, OhioInformation Cove, TexasGriffin, Georgia

128

City of Hogansville, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company)Galion,Harrisonville,HickmanHogansville, Georgia

129

City of Moultrie, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (UtilityHolyrood,Martinsville,Moultrie, Georgia (Utility Company) Jump

130

City of Washington, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhioOglesby,Sullivan, Missouri (UtilityUnionWahoo, NebraskaMinnesotaGeorgia

131

City of Quitman, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (UtilityGeorgiaArkansas References: EIA Form

132

E-Print Network 3.0 - airfield savannah georgia Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering Alliance Students Summary: You must be in good academic standing at Armstrong to cross-register at Georgia Tech Savannah (GTS... .gatech.educalendar-events...

133

E-Print Network 3.0 - area waynesboro georgia Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Wildlife Habitat Conservation Summary: landowners in priority areas, has increased. Cherokee Rock Village, Walker County, Georgia Nate... , and public access to recreation areas....

134

University of Georgia College of Agricultural and Environmental Sciences Alumni Association 2012 Nomination Form  

E-Print Network [OSTI]

University of Georgia College of Agricultural and Environmental Sciences Alumni Association 2012 in the College of Agricultural and Environmental Sciences Activity Center. To be displayed in an attractive

Arnold, Jonathan

135

adults georgia 2006-2007: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Technology, automatically supersede the contents of this manual. A GTA is a temporary Bennett, Gisele 3 Georgia Tech : Catalog 2006 2007 : Home 2006 -2007 General Catalog...

136

Coweta-Fayette EMC- Residential Solar Water Heater Rebate Program (Georgia)  

Broader source: Energy.gov [DOE]

Coweta-Fayette Electric Membership Corporation (EMC) provides electric and natural gas service to 58,000 customers in Georgia's Coweta, Fayette, Meriwether, Heard, Troop and Fulton counties.

137

Assistant Professor of Gerontology The Gerontology Institute at Georgia State University invites applications for a tenure-track assistant  

E-Print Network [OSTI]

lead to external funding. Georgia State University is the Southeast's leading urban researchAssistant Professor of Gerontology The Gerontology Institute at Georgia State University invites faculty representing numerous disciplines across the University. Further information about the Gerontology

Arnold, Jonathan

138

Case Study: Georgia-Pacific Reduces Outside Fuel Costs and Increases Process Efficiency with Insulation Upgrade Program  

E-Print Network [OSTI]

A Georgia-Pacific plywood plant located in Madison, Georgia recently decided to insulate their steam lines for energy conservation, improved process efficiency and personnel protection. The goal of the project was to eliminate dependency...

Jackson, D.

139

Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1  

E-Print Network [OSTI]

, USA 2 NDP Optronics LLC, Mableton, Georgia 30126, USA 3 School of Electrical and Computer Engineering

Dietz, Nikolaus

140

Thermophysical Properties of U-10MO Alloy  

SciTech Connect (OSTI)

This report provides an overview of thermophysical properties of unirradiated uranium alloyed with ten weight percent molybdenum (U 10Mo), with particular focus on those material properties needed for modeling of new fuels for HPRRs (High Performance Research Reactors). The report contains both historical data available in the literature on U-10Mo, as well as more recent results conducted by the Global Threat Reduction Initiative fuel development program. The main use of the report is intended as a standard U-10Mo alloy properties reference for reactor models and simulations.

A. M. Phillips; G. S. Mickum; D. E. Burkes

2010-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Archway Education Professional The University of Georgia is seeking a qualified candidate to serve as the Archway Education Professional in  

E-Print Network [OSTI]

Archway Education Professional The University of Georgia is seeking a qualified candidate to serve as the Archway Education Professional in Dalton-Whitfield County, Georgia. The Archway Partnership was initiated with the University of Georgia. The Archway Education Professional is a UGA Public Service (Public Service Assistant

Arnold, Jonathan

142

University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program  

E-Print Network [OSTI]

University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program Program Description As part of the University of Georgia (UGA) / University of Liverpool Partnership, we are providing for ongoing sponsored funding to continue the collaborations. Eligibility Criteria To be eligible

Arnold, Jonathan

143

POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition in Licensing  

E-Print Network [OSTI]

POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition the interests of the company over their responsibilities to UGARF and the University of Georgia. This Policy with this Policy. II. Policy In the course of intellectual property licensing, UGARF, through the work of TCO, may

Arnold, Jonathan

144

EcoCAR by Georgia Tech efficiency through design and innovation  

E-Print Network [OSTI]

engineering competition sponsored by the Department of Energy and General Motors EcoCAR by Georgia Tech engineering competition sponsored by the Department of Energy and General Motors #12;GT EcoCAR GOALS: Increase by the Department of Energy and General Motors EcoCAR by Georgia Tech efficiency through design and innovation

Houston, Paul L.

145

INTRODUCTION TO SMART GRID Weichao Wang (UNCC), Yi Pan (Georgia State),  

E-Print Network [OSTI]

INTRODUCTION TO SMART GRID Weichao Wang (UNCC), Yi Pan (Georgia State), Wenzhan Song (Georgia State) and Le Xie (Texas A&M) NSF SFS Project Team on "Integrated Learning Environment for Smart Grid Security" #12; Objective of National Power Grid Modernization Architecture of Smart Grid What is Smart Grid

Wang, Weichao

146

May 14-16, 2009 Young Harris College, Young Harris, Georgia  

E-Print Network [OSTI]

May 14-16, 2009 Young Harris College, Young Harris, Georgia Master Beekeeper levels: · Certified · Journeyman · Master · Master Craftsman Young Harris College and the University of Georgia are offering, candles, section comb honey, mead, and beekeeping gadgets. We urge students to participate

Delaplane, Keith S.

147

Newton County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy ResourcesLoading map...(Utility Company) Jump to:City) Jump to:Newmarket, NewNewstead, NewGeorgia

148

Echols County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address:011-DNA Jump37. It is classified asThis articleEastborough,Eaton,Echols County, Georgia:

149

Upson County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformation UC 19-6-401Upson County, Georgia: Energy Resources Jump to:

150

Washington County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformationSEDS dataIndiana: EnergyWasco County,Washington County,Georgia:

151

Wayne County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformationSEDSWawarsing, New York: Energy Resources JumpGeorgia: Energy

152

Butts County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin: EnergyBoston Areais aBurkittsville,Bushyhead,Butts County, Georgia: Energy

153

Georgia Recovery Act State Memo | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in3.pdf Flash2006-53.pdf0.pdfCost SavingsEnergyDepartment ofGeneralFutureElectricGeorgia

154

White County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:SeadovCooperative Jump to:Westview, Florida:WheatleyWheeler,Georgia: Energy Resources Jump

155

Wilkinson County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:SeadovCooperative Jump to:Westview,GeothermalHawaii:Sage grouseWilkinson County, Georgia:

156

Sandy Springs, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, searchVirginiaRooseveltVI SolarisSandusky County, Ohio: EnergySandyGeorgia:

157

DeKalb County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision has beenFfe2fb55-352f-473b-a2dd-50ae8b27f0a6 No revision has been approved forDayton is aCounty, Georgia:

158

Camden County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin: EnergyBoston Areais3:InformationCamden County, Georgia: Energy Resources

159

City of Camilla, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy InformationLake SouthChromaIowaCamilla, Georgia (Utility Company)

160

City of Cartersville, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy InformationLake SouthChromaIowaCamilla, Georgia (UtilityCartersville,

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
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161

City of Mansfield, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (Utility Company)Livingston Place:Mansfield, Georgia (Utility

162

City of Monticello, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (UtilityGeorgia (Utility Company) Jump to: navigation, search

163

City of Palmetto, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (UtilityGeorgia (UtilityNewburgOrrville, OhioOxford,Palmetto

164

City of Thomaston, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy NebraskaStanhope, Iowa (Utility Company)Thomaston Place: Georgia

165

Clinch County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:EnergyWisconsin: Energy ResourcesInformation istypeClinch County, Georgia:

166

Talbot County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,Ltd Jump to: navigation,Open EnergyFacilityTEPCounty, Georgia: Energy

167

Tift County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,Ltd Jump JumpAl., 1978) |Thrall,Tibagi EnergeticaTift County, Georgia:

168

Turner County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,LtdInformationTulsa, Oklahoma:EnergyTurner County, Georgia: Energy

169

Georgia Regions | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched5 IndustrialIsadoreConnecticut Regions National Science2Gcreport BiologicalGeorgia

170

GaN/AlGaN ultraviolet/infrared dual-band detector G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, and A. G. U. Pereraa  

E-Print Network [OSTI]

, Atlanta, Georgia 30303 S. G. Matsik NDP Optronics, Mableton, Georgia 30126 A. Asghar and I. T. Ferguson

Perera, A. G. Unil

171

Prompt {gamma}-ray spectroscopy of the {sup 104}Mo and {sup 108}Mo fission fragments  

SciTech Connect (OSTI)

The level structures of the neutron-rich {sup 104}Mo and {sup 108}Mo nuclei have been investigated by observing prompt {gamma} rays emitted in the spontaneous fission of {sup 248}Cm with the EUROGAM spectrometer. Levels with spins up to 12{h_bar} have been observed and {gamma} branching obtained. The data can be satisfactorily described when {sup 104,108}Mo are considered as axially symmetric nuclei: in {sup 104}Mo, rotational bands based on the ground state, the one-phonon and the two-phonon {gamma}-vibrational states and a quasiparticle state have been observed, whereas in {sup 108}Mo the information is limited to the yrast band and the one phonon {gamma} band. {copyright} {ital 1996 The American Physical Society.}

Guessous, A.; Schulz, N.; Bentaleb, M.; Lubkiewicz, E. [Centre de Recherches Nucleaires, Institut National de Physique Nucleaire et de Physique des Particules, Centre National de la Recherche Scientifique, Universite Louis Pasteur, 67037 Strasbourg (France)] [Centre de Recherches Nucleaires, Institut National de Physique Nucleaire et de Physique des Particules, Centre National de la Recherche Scientifique, Universite Louis Pasteur, 67037 Strasbourg (France); Durell, J.L.; Pearson, C.J.; Phillips, W.R.; Shannon, J.A.; Urban, W.; Varley, B.J. [Department of Physics, University of Manchester, M13 9PL (United Kingdom)] [Department of Physics, University of Manchester, M13 9PL (United Kingdom); Ahmad, I.; Lister, C.J.; Morss, L.R.; Nash, K.L.; Williams, C.W. [Argonne National Laboratory, Argonne, Illinois 60439 (United States)] [Argonne National Laboratory, Argonne, Illinois 60439 (United States); Khazrouni, S. [Laboratoire de Physique Nucleaire Appliquee, Faculte des Sciences, Kenitra, Maroc (France)] [Laboratoire de Physique Nucleaire Appliquee, Faculte des Sciences, Kenitra, Maroc (France)

1996-03-01T23:59:59.000Z

172

Tunable MoS{sub 2} bandgap in MoS{sub 2}-graphene heterostructures  

SciTech Connect (OSTI)

Using density functional theory calculations with van der Waals corrections, we investigated how the interlayer orientation affects the structure and electronic properties of MoS{sub 2}-graphene bilayer heterostructures. Changing the orientation of graphene with respect to MoS{sub 2} strongly influences the type and the value of the electronic bandgap in MoS{sub 2}, while not significantly altering the binding energy between the layers or the interlayer spacing. We show that the physical origin of this tunable bandgap arises from variations in the S–S interplanar distance (MoS{sub 2} thickness) with the interlayer orientation, variations which are caused by electron transfer away from the Mo–S bonds.

Ebnonnasir, Abbas [Department of Mechanical Engineering and Materials Science Program, Colorado School of Mines, Golden, Colorado 80401 (United States); Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States); Narayanan, Badri; Ciobanu, Cristian V., E-mail: cciobanu@mines.edu, E-mail: kodambaka@ucla.edu [Department of Mechanical Engineering and Materials Science Program, Colorado School of Mines, Golden, Colorado 80401 (United States); Kodambaka, Suneel, E-mail: cciobanu@mines.edu, E-mail: kodambaka@ucla.edu [Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States)

2014-07-21T23:59:59.000Z

173

Ga nanoparticle-enhanced photoluminescence of GaAs  

SciTech Connect (OSTI)

We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-09-02T23:59:59.000Z

174

sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage  

SciTech Connect (OSTI)

This study focuses on evaluating the feasibility and suitability of using the Jurassic/Triassic (J/TR) sediments of the South Georgia Rift basin (SGR) for CO2 storage in southern South Carolina and southern Georgia The SGR basin in South Carolina (SC), prior to this project, was one of the least understood rift basin along the east coast of the U.S. In the SC part of the basin there was only one well (Norris Lightsey #1) the penetrated into J/TR. Because of the scarcity of data, a scaled approach used to evaluate the feasibility of storing CO2 in the SGR basin. In the SGR basin, 240 km (~149 mi) of 2-D seismic and 2.6 km2 3-D (1 mi2) seismic data was collected, process, and interpreted in SC. In southern Georgia 81.3 km (~50.5 mi) consisting of two 2-D seismic lines were acquired, process, and interpreted. Seismic analysis revealed that the SGR basin in SC has had a very complex structural history resulting the J/TR section being highly faulted. The seismic data is southern Georgia suggest SGR basin has not gone through a complex structural history as the study area in SC. The project drilled one characterization borehole (Rizer # 1) in SC. The Rizer #1 was drilled but due to geologic problems, the project team was only able to drill to 1890 meters (6200 feet) instead of the proposed final depth 2744 meters (9002 feet). The drilling goals outlined in the original scope of work were not met. The project was only able to obtain 18 meters (59 feet) of conventional core and 106 rotary sidewall cores. All the conventional core and sidewall cores were in sandstone. We were unable to core any potential igneous caprock. Petrographic analysis of the conventional core and sidewall cores determined that the average porosity of the sedimentary material was 3.4% and the average permeability was 0.065 millidarcy. Compaction and diagenetic studies of the samples determined there would not be any porosity or permeability at depth in SC. In Georgia there appears to be porosity in the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

Waddell, Michael

2014-09-30T23:59:59.000Z

175

Wetting of metals and glasses on Mo  

SciTech Connect (OSTI)

The wetting of low melting point metals and Si-Ca-Al-Ti-O glasses on molybdenum has been investigated. The selected metals (Au, Cu, Ag) form a simple eutectic with Mo. Metal spreading occurs under nonreactive conditions without interdiffusion or ridge formation. The metals exhibit low (non-zero) contact angles on Mo but this requires temperatures higher than 1100 C in reducing atmospheres in order to eliminate a layer of adsorbed impurities on the molybdenum surface. By controlling the oxygen activity in the furnace, glass spreading can take place under reactive or nonreactive conditions. We have found that in the glass/Mo system the contact angle does not decrease under reactive conditions. In all cases, adsorption from the liquid seems to accelerate the diffusivity on the free molybdenum surface.

Saiz, Eduardo; Tomsia, Antoni P.; Saiz, Eduardo; Lopez-Esteban, Sonia; Benhassine, Mehdi; de Coninck, Joel; Rauch, Nicole; Ruehle, Manfred

2008-01-08T23:59:59.000Z

176

Domestic production of medical isotope Mo-99 moves a step closer  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mo-99 Domestic production of medical isotope Mo-99 moves a step closer Irradiated uranium fuel has been recycled and reused for molybdenum-99 (Mo-99) production, with...

177

Oxidation, Reduction, and Condensation of Alcohols over (MO3)3 (M=Mo, W) Nanoclusters  

SciTech Connect (OSTI)

The reactions of deuterated methanol, ethanol, 1-propanol, 1-butanol, 2-propanol, 2-butanol and t-butanol over cyclic (MO3)3 (M = Mo, W) clusters were studied experimentally with temperature programmed desorption (TPD) and theoretically with coupled cluster CCSD(T) theory and density functional theory. The reactions of two alcohols per M3O9 cluster are required to provide agreement with experiment for D2O release, dehydrogenation and dehydration. The reaction begins with the elimination of water by proton transfers and forms an intermediate dialkoxy species which can undergo further reaction. Dehydration proceeds by a ? hydrogen transfer to a terminal M=O. Dehydrogenation takes place via an ? hydrogen transfer to an adjacent MoVI = O atom or a WVI metal center with redox involved for M = Mo and no redox for M = W. The two channels have comparable activation energies. H/D exchange to produce alcohols can take place after olefin is released or via the dialkoxy species depending on the alcohol and the cluster. The Lewis acidity of the metal center with WVI being larger than MoVI results in the increased reactivity of W3O9 over Mo3O9 for dehydrogenation and dehydration.

Fang, Zongtang; Li, Zhenjun; Kelley, Matthew S.; Kay, Bruce D.; Li, Shenggang; Hennigan, Jamie M.; Rousseau, Roger J.; Dohnalek, Zdenek; Dixon, David A.

2014-10-02T23:59:59.000Z

178

AlGaN/GaN-based power semiconductor switches  

E-Print Network [OSTI]

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

179

Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia  

SciTech Connect (OSTI)

Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

2013-11-01T23:59:59.000Z

180

GEORGIA INSTITUTE OF TECHNOLOGY COLLEGE OF ENGINEERING 1 College of Engineering  

E-Print Network [OSTI]

Electrical and Computer Engineering Industrial and Systems Engineering Materials Science and Engineering and Biomolecular Engineering Civil and Environmental Engineering Electrical and Computer Engineering IndustrialGEORGIA INSTITUTE OF TECHNOLOGY · COLLEGE OF ENGINEERING 1 College of Engineering Aerospace

Li, Mo

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

SAVANNAH HARBOR EXPANSION PROJECT CHATHAM COUNTY, GEORGIA AND JASPER COUNTY, SOUTH CAROLINA  

E-Print Network [OSTI]

SAVANNAH HARBOR EXPANSION PROJECT CHATHAM COUNTY, GEORGIA AND JASPER COUNTY, SOUTH CAROLINA 22 (Kings Island Turning Basin at Stations 98+500 to 100+500) 5 feet deeper (to an authorized navigation #12

US Army Corps of Engineers

182

Energy Conservation Recommendations, Implementation Costs, and Projected Paybacks for Georgia's Targeted Schools and Hospitals Conservation Program  

E-Print Network [OSTI]

During the past year the Georgia Tech Research Institute performed technical assistance studies on over 100 school and hospital buildings under a program funded by the Governor's Office of Energy Resources. This program is known as the Targeted...

Brown, M. L.; Moore, D. M.

1988-01-01T23:59:59.000Z

183

Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report  

SciTech Connect (OSTI)

This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

SC Energy Office: Southern Alliance for Clean Energy

2013-02-12T23:59:59.000Z

184

An Evaluation of Georgia's Institutional Conservation Program Preliminary Report - June 1989  

E-Print Network [OSTI]

The Institutional Conservation Program (ICP) has been active in Georgia since 1980 and has distributed over $20 million in matching funds for conservation measures and energy studies. The purpose of the ICP is to reduce energy consumption in schools...

Brown, M. L.; Downing, C.

1989-01-01T23:59:59.000Z

185

Capacity and Energy Payments to Small Power Producers and Cogenerators Under PURPA Docket (Georgia)  

Broader source: Energy.gov [DOE]

Docket No. 4822 was enacted by the Georgia Public Service Commission in accordance with The Public Utility Regulatory Policies Act of 1978 (PURPA) that was enacted to promote conservation and to...

186

Sales Tax Exemption for Energy-Efficient Products (Sales Tax Holiday) (Georgia))  

Broader source: Energy.gov [DOE]

Georgia allows an annual state and local sales tax exemption on Energy Star products of $1,500 or less per product, purchased for non-commercial home or personal use.The 100% exemption from the...

187

EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia  

Broader source: Energy.gov [DOE]

This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

188

Georgia Champions Energy Efficiency Savings: Weatherization Assistance Close-Up Fact Sheet  

SciTech Connect (OSTI)

Georgia demonstrates its commitment to technology and efficiency through the Weatherization Program. Weatherization uses advanced technologies and techniques to reduce energy costs for low-income families by increasing the energy efficiency of their homes.

D& R International

2001-10-10T23:59:59.000Z

189

Computers and nautical archaeology: characterization of the C.S.S. Georgia wreck site  

E-Print Network [OSTI]

COMPUTERS AND NAUTICAL ARCHAEOLOGY: CHARACTERIZATION OF THE C. S. S. GEORGIA NRECK SITE A Thesis by JAMES GRAHAM BAKER Submitted to the Graduate College of Texas ASM University in partial fulfillment of the requirements for the degree... of MASTER OF ARTS December 19HZ Major Subject: Anthropology COMPUTERS IN NAUTICAL ARCHAEOLOGY: CHARACTERIZATION OF THE C. S. S, GEORGIA WRECK SITE A Thesis by JAMES GRAHAM BAKER Approved as to style and content by: Frederick H. van Doorninck, Jr...

Baker, James Graham

1982-01-01T23:59:59.000Z

190

Accelerator Production Options for 99MO  

SciTech Connect (OSTI)

Shortages of {sup 99}Mo, the most commonly used diagnostic medical isotope, have caused great concern and have prompted numerous suggestions for alternate production methods. A wide variety of accelerator-based approaches have been suggested. In this paper we survey and compare the various accelerator-based approaches.

Bertsche, Kirk; /SLAC

2010-08-25T23:59:59.000Z

191

Georgia Institute of Technology chilled water system evaluation and master plan  

SciTech Connect (OSTI)

As the host of the Olympic Village for the 1996 Atlanta Olympics, Georgia Tech has experienced a surge in construction activities over the last three years. Over 1.3 million square feet of new buildings have been constructed on the Georgia Tech campus. This growth has placed a strain on the Georgia Tech community and challenged the facilities support staff charged with planning and organizing utility services. In concert with Olympic construction, utility planners have worked to ensure long term benefits for Georgia Tech facilities while meeting the short term requirements of the Olympic Games. The concentration of building construction in the northwest quadrant of the campus allowed planners to construct a satellite chilled water plant to serve the needs of this area and provide the opportunity to integrate this section of the campus with the main campus chilled water system. This assessment and master plan, funded in part by the US Department of Energy, has evaluated the chilled water infrastructure at Georgia Tech, identified ongoing problems and made recommendations for long term chilled water infrastructure development and efficiency improvements. The Georgia Tech office of Facilities and RDA Engineering, Inc. have worked together to assemble relevant information and prepare the recommendations contained in this document.

NONE

1996-05-15T23:59:59.000Z

192

Georgia Newspaper Coverage Discovering Conventional Practices of the 'Cherokee Question': Prelude to the Removal, 1828-1832.  

E-Print Network [OSTI]

??This thesis analyzes the specific journalistic conventional practices of newspapers in Georgia as they focused on the “Cherokee Question” in 1828-1832, the critical period during… (more)

Hobgood, Jr., James Hollister

2008-01-01T23:59:59.000Z

193

Development of CaMoO4 crystal scintillators for double beta decay experiment with 100-Mo  

E-Print Network [OSTI]

Energy resolution, alpha/beta ratio, pulse-shape discrimination for gamma rays and alpha particles, temperature dependence of scintillation properties, and radioactive contamination were studied with CaMoO4 crystal scintillators. A high sensitivity experiment to search for neutrinoless double beta decay of 100-Mo by using CaMoO4 scintillators is discussed.

A. N. Annenkov; O. A. Buzanov; F. A. Danevich; A. Sh. Georgadze; S. K. Kim; H. J. Kim; Y. D. Kim; V. V. Kobychev; V. N. Kornoukhov; M. Korzhik; J. I. Lee; O. Missevitch; V. M. Mokina; S. S. Nagorny; A. S. Nikolaiko; D. V. Poda; R. B. Podviyanuk; D. J. Sedlak; O. G. Shkulkova; J. H. So; I. M. Solsky; V. I. Tretyak; S. S. Yurchenko

2007-07-10T23:59:59.000Z

194

Processing, Microstructure, and Properties of Multiphase Mo Silicide Alloys  

SciTech Connect (OSTI)

Multiphase Mo silicide alloys containing T2 (Mo{sub 5}SiB{sub 2}), Mo{sub 3}Si and Mo phases where prepared by both melting and casting (M and C) and powder metallurgical (PM) processes. Glassy phases are observed in PM materials but not in M and C materials. Microstructural studies indicate that the primary phase is Mo-rich solid solution in alloys containing {le}(9.4Si+13.8B, at. %) and T2 in alloys with {ge}(9.8Si+14.6B). An eutectic composition is estimated to be close to Mo-9.6Si-14.2B. The mechanical properties of multiphase silicide alloys were determined by hardness, tensile and bending tests at room temperature. The multiphase alloy MSB-18 (Mo-9.4Si-13.8B) possesses a flexure strength distinctly higher than that of MoSi{sub 2} and other Mo{sub 5}Si{sub 3} silicide alloys containing no Mo particles. Also, MSB-18 is tougher than MoSi{sub 2} by a factor of 4.

Heatherly, L.; Liu, C.T.; Schneibel, J.H.

1998-11-30T23:59:59.000Z

195

Energy conserving site design case study: Shenandoah, Georgia. Final report  

SciTech Connect (OSTI)

The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

Not Available

1980-01-01T23:59:59.000Z

196

Coordinator of Operations The University of Georgia is seeking a qualified candidate to serve as the Coordinator of Operations with the  

E-Print Network [OSTI]

with the University of Georgia. The Archway Partnership has received funding from the Board of Regents to continueCoordinator of Operations The University of Georgia is seeking a qualified candidate to serve to bring the University of Georgia's expertise to communities and to facilitate community interaction

Arnold, Jonathan

197

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

to Georgia soils. Soil test phosphorous level by itself is not adequate to determine environmental risk by applying less manure, adding buffers or applying other management procedures. Sources of Risk and Transport and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2004 COMMERCIAL EGG TIP... GEORGIA'S PHOSPHOROUS INDEX

Navara, Kristen

198

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

to Georgia soils. Soil test phosphorous level by itself is not adequate to determine environmental risk by applying less litter, adding buffers or applying other management procedures. Sources of Risk and Transport and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2004 BROILER TIP... GEORGIA'S PHOSPHOROUS INDEX

Navara, Kristen

199

Investigation of the GaN-on-GaAs interface for vertical power device applications  

SciTech Connect (OSTI)

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07T23:59:59.000Z

200

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

The University of Georgia is committed to principles of equal opportunity and affirmative action. 06/10-15391 BANQUET MENUS  

E-Print Network [OSTI]

. The client will be billed for the total number prepared for. BanqueT Food service It is the policy banquet space within the Georgia Center must be furnished by Georgia Center Food Services. Below to assist you. Planning Timeline In order to provide you with excellent customer service, we must have your

Arnold, Jonathan

202

Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and Use of Data Policy  

E-Print Network [OSTI]

Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and Use of Data Policy Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and the NACElink Network to provide student with Eagle Career Net. Eagle Career Net is our online system

Hutcheon, James M.

203

FACULTY POSITION UNIVERSITY OF GEORGIA The Department of Poultry Science in the College of Agriculture and the Poultry  

E-Print Network [OSTI]

FACULTY POSITION ­ UNIVERSITY OF GEORGIA The Department of Poultry Science in the College of Agriculture and the Poultry Diagnostic and Research Center in the Department of Population Health in the area of poultry health and production. Georgia is the leading poultry producing state in the US

Navara, Kristen

204

Observations of short-circuiting flow paths within a free-surface wetland in Augusta, Georgia, U.S.A.  

E-Print Network [OSTI]

constructed treatment wetland in Augusta, Georgia were used to quantify the size, distribution, velocity). In treatment wetlands, such heterogeneity nearly always results in reduced contaminant removal (WoObservations of short-circuiting flow paths within a free-surface wetland in Augusta, Georgia, U

Licciardi, Joseph M.

205

Neutron Hole States of Mo-93,95  

E-Print Network [OSTI]

I I I0 IO 20 3040 50 60 0 I I I I I I IO 20 30 40 5Q 60 IO 2- 0 I I I lo 20 X) 40 50 60 I j I I I l 0 lo 20 30 4050 60 8, .(deg) 8,~. (deg) {deg) {deg) FIG. 2. Angular distributions for the +Mo(P, d)93Mo reaction. The errors sho....20 l X=2 0.769 2=4 0.8l6 2=2 Mo(d, t) Mo l IGO= P IQ IO? IG 10 IQ 10 IGO? IQ I I I I l.092 2=2+4 = IO IQ)- l.674 All the angular distributions obtained along mith the D%'BA fits for the states analyzed in the "Mo(d, t)9'Mo...

Bindal, P. K.; Youngblood, David H.; Kozub, R. L.

1977-01-01T23:59:59.000Z

206

Design and performance of the Georgia Tech Aquatic Center photovoltaic system. Final report  

SciTech Connect (OSTI)

A building-integrated DC PV array has been constructed on the Georgia Tech campus. The array is mounted on the roof of the Georgia Tech Aquatic Center (GTAC), site of the aquatic events during the 1996 Paralympic and Olympic Games in Atlanta. At the time of its construction, it was the world`s largest roof-mounted photovoltaic array, comprised of 2,856 modules and rates at 342 kW. This section describes the electrical and physical layout of the PV system, and the associated data acquisition system (DAS) which monitors the performance of the system and collects measurements of several important meteorological parameters.

Rohatgi, A.; Begovic, M.; Long, R.; Ropp, M.; Pregelj, A.

1996-12-31T23:59:59.000Z

207

Mo Year Report Period: EIA ID NUMBER:  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"Click worksheet9,1,50022,3,,,,6,1,,781 2,328 2,683DieselValuesEIA-782A and EIA-782B:0 U.S. Energy1‹Mo

208

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets  

SciTech Connect (OSTI)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

2013-08-19T23:59:59.000Z

209

MoRu/Be multilayers for extreme ultraviolet applications  

DOE Patents [OSTI]

High reflectance, low intrinsic roughness and low stress multilayer systems for extreme ultraviolet (EUV) lithography comprise amorphous layers MoRu and crystalline Be layers. Reflectance greater than 70% has been demonstrated for MoRu/Be multilayers with 50 bilayer pairs. Optical throughput of MoRu/Be multilayers can be 30-40% higher than that of Mo/Be multilayer coatings. The throughput can be improved using a diffusion barrier to make sharper interfaces. A capping layer on the top surface of the multilayer improves the long-term reflectance and EUV radiation stability of the multilayer by forming a very thin native oxide that is water resistant.

Bajt, Sasa C. (Livermore, CA); Wall, Mark A. (Stockton, CA)

2001-01-01T23:59:59.000Z

210

Catalytic Properties of Supported MoO3 Catalysts for Oxidative Dehydrogenation of Propane  

E-Print Network [OSTI]

Catalytic Properties of Supported MoO3 Catalysts for Oxidative Dehydrogenation of Propane Kaidong The effects of MoOx structure on propane oxidative dehydrogenation (ODH) rates and selectivity were examined with those obtained on MoOx/ZrO2. On MoOx/Al2O3 catalysts, propane turnover rate increased with increasing Mo

Iglesia, Enrique

211

BLACK POLITICAL THEOLOGY Spring 2010 // Georgia State University // Directed Reading Graduate Course  

E-Print Network [OSTI]

BLACK POLITICAL THEOLOGY Spring 2010 // Georgia State University // Directed Reading Graduate in "political theology" in the humanities. The term comes from the German jurist Carl Schmitt who suggested in his book of that title that "all significant political concepts of the modern theory of the state

Doyle, Robert

212

Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia Institute of Technology  

E-Print Network [OSTI]

Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia or organization) DOT - $92,292.15 Total Project Cost $92,292.15 Agency ID or Contract Number DTRT13-G-UTC29 Start and End Dates November 2013 - June 2015 Brief Description of Research Project Local governments are using

California at Davis, University of

213

e-mailed 07/22/2013 TO: Georgia Tech PCard Coordinators & Pcard holders  

E-Print Network [OSTI]

: Business Services Subject: Policy Change for Food Purchases using the PCard Effective August 1, 2013, monthly bottled water service ­ use account 714350 (food/beverage off the shelf). 2. Caterer invoice less, Georgia Tech's policy exemption from Department of Administrative Services will no longer be in effect

Jacobs, Laurence J.

214

U.S. EPA State Carbon Emissions Goals Georgia Fact Sheet  

E-Print Network [OSTI]

on economic cost and benefits estimates, a set of five very specific carbon abatement measures were selected. New renewable electrical energy sources, e.g., solar, wind, etc. 5. Reducing electric consumption Shelton, PhD Strategic Energy Institute Georgia Tech The U.S. EPA has published

Das, Suman

215

This article was downloaded by: [University of Georgia] On: 04 February 2014, At: 13:21  

E-Print Network [OSTI]

b a Savannah River National Laboratory, Savannah River Site, Aiken, SC 29808, USA b Savannah River. Fletcherb and Andrew M. Grosseb,y a Savannah River National Laboratory, Savannah River Site, Aiken, SC 29808, USA; b Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29808, USA (Received 30

Georgia, University of

216

Georgia researchers uncover new ways to meet America's alternative energy needs. By Kathy Brister  

E-Print Network [OSTI]

-up companies. State economic developers attracted more than $3 billion in commercial green-energy projects over-edge" biofuel projects. Here's a look at some of the bioenergy innovations under way in Georgia, Tapping Timber bioenergy company Range Fuels plans to crank up what's being billed as the United States' first commercial

Nair, Sankar

217

An Experimental Study of Microfabricated Nickel Spark Plug Georgia Institute of technology  

E-Print Network [OSTI]

electrodeposition through polymer molds. The nickel spark plugs are tested at 20 Hz using spark energies of 5 mAn Experimental Study of Microfabricated Nickel Spark Plug Georgia Institute of technology Atlanta presents experimental. results of the erosion and wear characteristics of micromachined nickel spark plugs

218

Space Physics in Greece: Experience and Future Prospects Ioannis A. Daglis, Anastasios Anastasiadis and Georgia Tsiropoula  

E-Print Network [OSTI]

Space Physics in Greece: Experience and Future Prospects Ioannis A. Daglis, Anastasios Anastasiadis and Georgia Tsiropoula National Observatory of Athens, Institute of Ionospheric and Space Research, Penteli Engineering, Xanthi, Greece Abstract. Space Physics was born with the launch of the first artifi­ cial

Anastasiadis, Anastasios

219

Our History Steeped in history and tradition, the University of Georgia Hotel and Conference Center has  

E-Print Network [OSTI]

........................................................................................................ $4.95 Chopped salad tossed with eggs, cucumbers, tomatoes, and avocado ranch dressing. Topped witnessed "the dressing of the dog" in a Georgia jersey ­ a scene included in his book "Midnight.95 Crisp Green Beans battered and fried to golden perfection served with a cool side of Avocado Ranch

Arnold, Jonathan

220

Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Comparative Anatomy of Vertebrates  

E-Print Network [OSTI]

Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Syllabus Comparative Anatomy of Vertebrates Biology 453 Tentative: Autumn Quarter 2014 Course Web Page: http://courses'll want to cover your eyes with safety glasses or wear glasses on dissection lab days. Goals My course

Carrington, Emily

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Comparative Anatomy of Vertebrates  

E-Print Network [OSTI]

Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Syllabus Comparative Anatomy of Vertebrates Biology 453 Winter Quarter 2014 Course Web Page: http://courses.washington.edu/chordate/hmpg-biol453.html glasses on dissection lab days. Goals My course goals begin with learning the vocabulary of anatomy; you

Carrington, Emily

222

Adopted Version 1 Georgia Tech's "BuzzPort" Portal Usage Policy  

E-Print Network [OSTI]

Adopted Version 1 Georgia Tech's "BuzzPort" Portal Usage Policy v. 7.1 1.0 PURPOSE This Policy are highly valued and sensitive Institute resources. This Policy establishes an acceptable usage framework.0 SCOPE This Policy applies to all authorized BuzzPort usage from any location at all times

Li, Mo

223

Habitat for Humanity: La Grange, Georgia, 2003 Jimmy Carter Work Project  

SciTech Connect (OSTI)

The Troup-Chambers Habitat for Humanity built a Habitat house to ENERGY STAR standards in LaGrange, Georgia, in 2003. The project was so successfully that all Troup-Chambers houses will now be built to ENERGY STAR standards.

Not Available

2005-06-01T23:59:59.000Z

224

School of Architecture College of Architecture Georgia Institute of Technology M.S. IN URBAN DESIGN  

E-Print Network [OSTI]

1 School of Architecture College of Architecture Georgia Institute of Technology M.S. IN URBAN and richly interdisciplinary experience, with required courses in urban design, architecture and city planning, with additional opportunities in civil and environmental engineering, real estate development

225

The University of Georgia Job Search Strategies | Resume | Cover Letter | Interviewing | Social Media  

E-Print Network [OSTI]

The University of Georgia Job Search Strategies | Resume | Cover Letter | Interviewing | Social Fair 6 Reference/Recommendation Guidelines 7 Resume Guidelines 8 Sample Resumes 9-13 Power Verbs 14 a Major · Choosing a Career · Resumes · Cover Letters · Mock Interviews · The Job Search · Personal

Arnold, Jonathan

226

Mo Supply Chain for Nuclear Medicine Ladimer S. Nagurney  

E-Print Network [OSTI]

November 13, 2012 #12;Nuclear Medicine: Meeting Patient Needs with 99 Mo Ladimer S. Nagurney The 99 Mo of Physics Chemistry Biology Operations Research with some Biomedical Engineering thrown in at each step;Challenges Reactors are old nearing their end of life. Planned and unplanned shutdowns have created spot

Nagurney, Anna

227

Neutrino scattering off the stable even-even Mo isotopes  

SciTech Connect (OSTI)

Inelastic neutrino-nucleus reaction cross sections are studied focusing on the neutral current processes. Particularly, we investigate the angular and initial neutrino-energy dependence of the differential and integrated cross sections for low and intermediate energies of the incoming neutrino. The nuclear wave functions for the initial and final nuclear states are constructed in the context of the quasi-particle random phase approximation (QRPA) tested on the reproducibility of the low-lying energy spectrum. The results presented here refer to the isotopes Mo{sup 92}, Mo{sup 94}, Mo{sup 96}, Mo{sup 98} and Mo{sup 100}. These isotopes could play a significant role in supernova neutrino detection in addition to their use in double-beta and neutrinoless double-beta decay experiments (e.g. MOON, NEMO III)

Balasi, K. G.; Kosmas, T. S.; Divari, P. C. [Theoretical Physics Section, University of Ioannina, GR 45110 Ioannina (Greece)

2009-11-09T23:59:59.000Z

228

Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011  

SciTech Connect (OSTI)

This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

Not Available

2011-05-01T23:59:59.000Z

229

Supplemental Guide for Seasonal High Water Table Indicators in Georgia's Onsite Wastewater Manual Section C: Flatwoods Region  

E-Print Network [OSTI]

1 Supplemental Guide for Seasonal High Water Table Indicators in Georgia's Onsite Wastewater Manual) are part of the Atlantic Coast Flatwoods that run along the eastern shore of the US. They fall within

Ma, Lena

230

A novel three dimensional semimetallic MoS{sub 2}  

SciTech Connect (OSTI)

Transition metal dichalcogenides (TMDs) have many potential applications, while the performances of TMDs are generally limited by the less surface active sites and the poor electron transport efficiency. Here, a novel three-dimensional (3D) structure of molybdenum disulfide (MoS{sub 2}) with larger surface area was proposed based on first-principle calculations. 3D layered MoS{sub 2} structure contains the basal surface and joint zone between the different nanoribbons, which is thermodynamically stable at room temperature, as confirmed by first principles molecular dynamics calculations. Compared the two-dimensional layered structures, the 3D MoS{sub 2} not only owns the large surface areas but also can effectively avoid the aggregation. Interestingly, although the basal surface remains the property of the intrinsic semiconductor as the bulk MoS{sub 2}, the joint zone of 3D MoS{sub 2} exhibits semimetallic, which is derived from degenerate 3d orbitals of the Mo atoms. The high stability, large surface area, and high conductivity make 3D MoS{sub 2} have great potentials as high performance catalyst.

Tang, Zhen-Kun [Beijing Computational Science Research Center, Beijing 100084 (China); Departments of Physics and Electronics, Hengyang Normal University, Hengyang 421008 (China); Zhang, Hui; Liu, Li-Min, E-mail: limin.liu@csrc.ac.cn [Beijing Computational Science Research Center, Beijing 100084 (China); Liu, Hao [Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan 610207 (China); Lau, Woon-Ming [Beijing Computational Science Research Center, Beijing 100084 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan 610207 (China)

2014-05-28T23:59:59.000Z

231

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

232

AlGaAs emitter/GaAs barrier terahertz detector with a 2.3 THz threshold M. B. M. Rinzan and A. G. U. Pereraa  

E-Print Network [OSTI]

NDP Optronics LLC, 236 St. Martins Drive, Mableton, Georgia 30126 H. C. Liu, Z. R. Wasilewski, and M

Perera, A. G. Unil

233

Effect of Mo Dispersion Size and Water Vapor on Oxidation of Two-Phase Directionally Solidified NiAl-9Mo In-Situ Composites  

SciTech Connect (OSTI)

Oxidation of two-phase NiAl-9Mo eutectics with 3 different growth rates/2nd phase Mo dispersion sizes were investigated at 900 C in air and air with 10% water vapor. Good oxidation resistance via alumina formation was observed in dry air, with Mo volatilization loss minimized by fine submicron Mo dispersions. However, extensive Mo volatilization and in-place internal oxidation of prior Mo phase regions was observed in wet air oxidation. Ramifications of this phenomenon for the development of multi-phase high-temperature alloys are discussed

Brady, Michael P [ORNL] [ORNL; Bei, Hongbin [ORNL] [ORNL; Meisner, Roberta Ann [ORNL] [ORNL; Lance, Michael J [ORNL] [ORNL; Tortorelli, Peter F [ORNL] [ORNL

2014-01-01T23:59:59.000Z

234

Ethanol Conversion on Cyclic (MO3)3 (M = Mo, W) Clusters  

SciTech Connect (OSTI)

Oxides of molybdenum and tungsten are an important class of catalytic materials with applications ranging from isomerization of alkanes and alkenes, partial oxidation of alcohols, selective reduction of nitric oxide and metathesis of alkeness.[1-10] While many studies have focused on the structure - function relationships, the nature of high catalytic activity is still being extensively investigated. There is a general agreement that the activity of supported MOx (M = W, Mo) catalysts is correlated with the presence of acidic sites, where the catalytic activity is strongly affected by the type of oxide support, delocalization of electron density, structures of tungsten oxide domains and presence of protons

Li, Zhenjun; Fang, Zongtang; Kelley, Matthew S.; Kay, Bruce D.; Rousseau, Roger J.; Dohnalek, Zdenek; Dixon, David A.

2014-03-06T23:59:59.000Z

235

Co-Mo Electric Cooperative- Residential Energy Efficiency Rebate Program  

Broader source: Energy.gov [DOE]

Co-Mo Electric Cooperative provides rebates to residential and commercial members who install air source, dual fuel, and/or geothermal heat pumps, and certain energy efficient appliances. The...

236

Q value of the 100Mo Double-Beta Decay  

E-Print Network [OSTI]

Penning trap measurements using mixed beams of 100Mo - 100Ru and 76Ge - 76Se have been utilized to determine the double-beta decay Q-values of 100Mo and 76Ge with uncertainties less than 200 eV. The value for 76Ge, 2039.04(16) keV is in agreement with the published SMILETRAP value. The new value for 100Mo, 3034.40(17) keV is 30 times more precise than the previous literature value, sufficient for the ongoing neutrinoless double-beta decay searches in 100Mo. Moreover, the precise Q-value is used to calculate the phase-space integrals and the experimental nuclear matrix element of double-beta decay.

S. Rahaman; V. -V. Elomaa; T. Eronen; J. Hakala; A. Jokinen; J. Julin; A. Kankainen; A. Saastamoinen; J. Suhonen; C. Weber; J. Äystö

2007-12-20T23:59:59.000Z

237

9 Cr-- 1 Mo steel material for high temperature application  

DOE Patents [OSTI]

One or more embodiments relates to a high-temperature, titanium alloyed, 9 Cr-1 Mo steel exhibiting improved creep strength and oxidation resistance at service temperatures up to 650.degree. C. The 9 Cr-1 Mo steel has a tempered martensite microstructure and is comprised of both large (0.5-3 .mu.m) primary titanium carbides and small (5-50 nm) secondary titanium carbides in a ratio of. from about 1:1.5 to about 1.5:1. The 9 Cr-1 Mo steel may be fabricated using exemplary austenizing, rapid cooling, and tempering steps without subsequent hot working requirements. The 9 Cr-1 Mo steel exhibits improvements in total mass gain, yield strength, and time-to-rupture over ASTM P91 and ASTM P92 at the temperature and time conditions examined.

Jablonski, Paul D; Alman, David; Dogan, Omer; Holcomb, Gordon; Cowen, Christopher

2012-11-27T23:59:59.000Z

238

Hating the Bear? : Root Causes of Perceived anti-Russian Slant in Western News Coverage of the 2008 Russia-Georgia War  

E-Print Network [OSTI]

In Person Interview. Moscow, Russia. 27 March 2010. Harding,In Person Interview. Moscow, Russia. 25 March 2010.Group (Organization). Russia & Georgia: The Fallout. 22

Spivakovsky-Gonzalez, Pedro

2011-01-01T23:59:59.000Z

239

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

240

1 Mo 1 Do 1 Sa 1 Di 1 Fr 1 Fr 1 Mo 1 Mi 1 Sa 1 Mo 1 Do 1 So 2 Di 2 Fr 2 So 2 Mi 2 Sa 2 Sa 2 Di 2 Do 2 So 2 Di 2 Fr 2 Mo  

E-Print Network [OSTI]

1 Mo 1 Do 1 Sa 1 Di 1 Fr 1 Fr 1 Mo 1 Mi 1 Sa 1 Mo 1 Do 1 So 2 Di 2 Fr 2 So 2 Mi 2 Sa 2 Sa 2 Di 2 Do 2 So 2 Di 2 Fr 2 Mo 3 Mi 3 Sa 3 Mo 3 Do 3 So 3 So 3 Mi 3 Fr 3 Mo 3 Mi 3 Sa 3 Di 4 Do 4 So 4 Di 4 Fr 4 Mo 4 Mo 4 Do 4 Sa 4 Di 4 Do P StAU4 So 4 Mi 5 Fr 5 Mo 5 Mi 5 Sa 5 Di 5 Di 5 Fr 5 So 5 Mi 5 Fr 5 Mo

Mayberry, Marty

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

GA Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:GA-Solar

242

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

243

Native point defects in GaSb  

SciTech Connect (OSTI)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

2014-10-14T23:59:59.000Z

244

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

245

Coated U(Mo) Fuel: As-Fabricated Microstructures  

SciTech Connect (OSTI)

As part of the development of low-enriched uranium fuels, fuel plates have recently been tested in the BR-2 reactor as part of the SELENIUM experiment. These fuel plates contained fuel particles with either Si or ZrN thin film coating (up to 1 µm thickness) around the U-7Mo fuel particles. In order to best understand irradiation performance, it is important to determine the starting microstructure that can be observed in as-fabricated fuel plates. To this end, detailed microstructural characterization was performed on ZrN and Si-coated U-7Mo powder in samples taken from AA6061-clad fuel plates fabricated at 500°C. Of interest was the condition of the thin film coatings after fabrication at a relatively high temperature. Both scanning electron microscopy and transmission electron microscopy were employed. The ZrN thin film coating was observed to consist of columns comprised of very fine ZrN grains. Relatively large amounts of porosity could be found in some areas of the thin film, along with an enrichment of oxygen around each of the the ZrN columns. In the case of the pure Si thin film coating sample, a (U,Mo,Al,Si) interaction layer was observed around the U-7Mo particles. Apparently, the Si reacted with the U-7Mo and Al matrix during fuel plate fabrication at 500°C to form this layer. The microstructure of the formed layer is very similar to those that form in U-7Mo versus Al-Si alloy diffusion couples annealed at higher temperatures and as-fabricated U-7Mo dispersion fuel plates with Al-Si alloy matrix fabricated at 500°C.

Emmanuel Perez; Dennis D. Keiser, Jr.; Ann Leenaers; Sven Van den Berghe; Tom Wiencek

2014-04-01T23:59:59.000Z

246

Beta decay of Ga-62  

E-Print Network [OSTI]

from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

247

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

248

SUPPORTED BY THE UGA OFFICE OF THE VICE PRESIDENT FOR INSTRUCTION OVPI.UGA.EDU The University of Georgia hosts the  

E-Print Network [OSTI]

, the Assessment Institute and Advising Research Seminar. She co-authored two articles in Academic advising: New NACADA Georgia Drive-in Conference The University of Georgia Academic Advising Coordinating Council #12 to undergraduate education, student success and retention, academic advising, curriculum and policy development

Arnold, Jonathan

249

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

in the prices paid for energy in recent years. In the last 10 years electrical costs have ranged from $0.07 per costs associated with the live production of broilers on farms in Georgia and the United States. HeatingPUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U

Navara, Kristen

250

Pre-Natural Resources (Two-year) Transfer Program Georgia Southern University, in cooperation with the Warnell School of Forestry and  

E-Print Network [OSTI]

School of Forest Resources to complete a Bachelor of Science in Forest Resources (BSFR). A limited numberPre-Natural Resources (Two-year) Transfer Program Georgia Southern University, in cooperation with the Warnell School of Forestry and Natural Resources, University of Georgia, offers a joint program of study

Hutcheon, James M.

251

Production of Mo-99 using low-enriched uranium silicide  

SciTech Connect (OSTI)

Over the last several years, uranium silicide fuels have been under development as low-enriched uranium (LEU) targets for Mo-99. The use of LEU silicide is aimed at replacing the UAl{sub x} alloy in the highly-enriched uranium dissolution process. A process to recover Mo-99 from low-enriched uranium silicide is being developed at Argonne National Laboratory. The uranium silicide is dissolved in alkaline hydrogen peroxide. Experiments performed to determine the optimum dissolution procedure are discussed, and the results of dissolving a portion of a high-burnup (>40%) U{sub 3}Si{sub 2} miniplate are presented. Future work related to Mo-99 separation and waste disposal are also discussed.

Hutter, J. C.; Srinivasan, B.; Vicek, M.; Vandegrift, G. F.

1994-09-01T23:59:59.000Z

252

Multiphonon resonant Raman scattering in MoS{sub 2}  

SciTech Connect (OSTI)

Optical emission spectrum of a resonantly (??=?632.8?nm) excited molybdenum disulfide (MoS{sub 2}) is studied at liquid helium temperature. More than 20 peaks in the energy range spanning up to 1400?cm{sup ?1} from the laser line, which are related to multiphonon resonant Raman scattering processes, are observed. The attribution of the observed lines involving basic lattice vibrational modes of MoS{sub 2} and both the longitudinal (LA(M)) and the transverse (TA(M) and/or ZA(M)) acoustic phonons from the vicinity of the high-symmetry M point of the MoS{sub 2} Brillouin zone is proposed.

Go?asa, K., E-mail: Katarzyna.Golasa@fuw.edu.pl; Grzeszczyk, M.; Wysmo?ek, A.; Babi?ski, A. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warszawa (Poland); Leszczy?ski, P.; Faugeras, C.; Nicolet, A. A. L.; Potemski, M. [Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble (France)

2014-03-03T23:59:59.000Z

253

Identification of phases in the interaction layer between U-Mo-Zr/Al and U-Mo-Zr/Al-Si  

SciTech Connect (OSTI)

Out-of-pile diffusion experiments were performed between U-7wt.% Mo-1wt.% Zr and Al or Al A356 (7,1wt.% Si) at 550 deg. C. In this work morphological characterization and phase identification on both interaction layer are presented. They were carried out by the use of different techniques: optical and scanning electron microscopy, X-Ray diffraction and WDS microanalysis. In the interaction layer U-7wt.% Mo-1wt.% Zr/Al, the phases UAl{sub 3}, UAl{sub 4}, Al{sub 20}Mo{sub 2}U and Al{sub 43}Mo{sub 4}U{sub 6} were identified. In the interaction layer U-7wt.% Mo-1wt.% Zr/Al A356, the phases U(Al, Si) with 25at.% Si and Si{sub 5}U{sub 3} were identified. This last phase, with a higher Si concentration, was identified with XRD Synchrotron radiation performed at the National Synchrotron Light Laboratory (LNLS), Campinas, Brasil. (author)

Varela, C.L. Komar; Arico, S.F.; Mirandou, M.; Balart, S.N. [Departamento Materiales, GIDAT, GAEN, CNEA, Avda. Gral Paz 1499, B1650KNA, San Martin (Argentina); Gribaudo, L.M. [Departamento Materiales, GIDAT, GAEN, CNEA, Avda. Gral Paz 1499, B1650KNA, San Martin (Argentina); CONICET, Avda. Rivadavia 1917, C1033AAJ, Buenos Aires (Argentina)

2008-07-15T23:59:59.000Z

254

Hydrotreatment of Athabasca bitumen derived gas oil over Ni-Mo, Ni-W, and Co-Mo catalysts  

SciTech Connect (OSTI)

The hydrotreatment of Athabasca bitumen derived heavy gas oil containing 4.08% S and 0.49% N was carried out in a trickle bed reactor over Ni-W, Ni-Mo, and Co-Mo catalysts supported on zeolite-alumina-silica at 623-698 K, LHSV of 1-4, gas flow rate 890 m[sup 3][sub H2]/m[sup 3][sub oil] (5,000 sef/bbl), and pressure of 6.89 MPa. Analyses for viscosity, density, aniline point, ASTM mid boiling point distillation, C/H ratio, and percentage of N and S in the final product were carried out to characterize the product oil. The amounts of N and S removed indicated the hydrodenitrogenation and hydrodesulfurization activity of the catalysts. Results of zeolite-alumina-silica-supported catalysts are compared to those obtained with commercially available Ni-Mo, Ni-W, and Co-Mo on [gamma]-alumina. Ni-Mo supported on zeolite-alumina-silica was most active and could remove as much as 99 % S and 89% N present in the oil at 698 K. The data for HDN and HDS fitted the pseudo first order model. The kinetic model is described in detail.

Diaz-Real, R.A.; Mann, R.S.; Sambi, I.S. (Univ. of Ottawa, Ontario (Canada). Dept. of Chemical Engineering)

1993-07-01T23:59:59.000Z

255

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents [OSTI]

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

256

Policy Flash 2013-71 AL 2013-11 NON M&O CONTRACTOR BUSINESS SYSTEMS...  

Broader source: Energy.gov (indexed) [DOE]

1 AL 2013-11 NON M&O CONTRACTOR BUSINESS SYSTEMS CLAUSES FOR SECTION H Policy Flash 2013-71 AL 2013-11 NON M&O CONTRACTOR BUSINESS SYSTEMS CLAUSES FOR SECTION H Policy Flash - AL...

257

Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography: Comparison Of Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films...

258

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

259

MO"BIUS-INVARIANT KNOT ENERGIES R.B. KUSNER  

E-Print Network [OSTI]

for divergence-free vector fields which arise in modeling incompressible fluid flow.6,7These new knot energies MO"BIUS-INVARIANT KNOT ENERGIES R.B. KUSNER, Urbana, IL, USA 61801-2975 There has been recent interest in knot energies among mathematicians

Sullivan, John M.

260

MO"BIUS-INVARIANT KNOT ENERGIES R.B. KUSNER  

E-Print Network [OSTI]

for divergence-free vector fields which arise in modeling incompressible fluid flow.? These new knot energies may MO"BIUS-INVARIANT KNOT ENERGIES R.B. KUSNER, Urbana, IL, USA 61801-2975 There has been recent interest in knot energies among mathematicians

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Phase transitions in the adsorption system Li/Mo(112)  

E-Print Network [OSTI]

Experimental studies of the phase transitions in the adsorption system Li/Mo(112) are presented. This system is a model system for highly anisotropic interactions. From measurements of the half-widths of the low-energy electron diffraction spot...

Fedorus, A.; Kolthoff, D.; Koval, V.; Lyuksyutov, Igor F.; Naumovets, AG; Pfnur, H.

2000-01-01T23:59:59.000Z

262

Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs  

E-Print Network [OSTI]

AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

Gao, Feng, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

263

Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA  

E-Print Network [OSTI]

Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

McGaughey, Alan

264

Influence of Mo on the Fe:Mo:C nanocatalyst thermodynamics for single-walled carbon nanotube growth  

E-Print Network [OSTI]

ternary phases, such as the Fe,Mo 23C6 type carbides.37 The way in which carbon interacts with transition of metal carbide formation. Although relating C solubility and catalytic ability of metal catalysts,23 , metals which form carbides ca

Curtarolo, Stefano

265

Phonon and elastic instabilities in MoC and MoN Gus L. W. Hart* and Barry M. Klein  

E-Print Network [OSTI]

illustrating the rich behavior of carbo-nitride materials. The early transition metal carbides and nitrides high transition temperatures. We show that the elastic instability in B1-structure MoN, demonstrated the calculations re- ported here were performed with the linear-augmented- plane-wave method.2­4 The B1 carbides

Hart, Gus

266

QUICK FACTS The University of Georgia Gwinnett Campus seeks to be a highly accessible and vibrant center  

E-Print Network [OSTI]

Master's Degrees FY10 1,213 142 4 Educational Specialist Degrees FY11 1,316 254 3 Doctoral Programs FY UGA Center for Continuing Education Age range: 22-60 Certificate Programs Average # of hours enrolled and northeast Georgia by: Increasing access to graduate degree programs, post-baccalaureate certificates

Arnold, Jonathan

267

Digital Media Tenure Track Position Georgia Tech's School of Literature, Media, and Communication (LMC), which provides diverse  

E-Print Network [OSTI]

Digital Media Tenure Track Position Georgia Tech's School of Literature, Media, and Communication Digital Media tenure track position at the rank of Assistant Professor, beginning in the fall of 2013. We's Computational Media and Digital Media programs. A Ph.D. in an appropriate field is required (e.g. digital media

Li, Mo

268

Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia  

E-Print Network [OSTI]

Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia Tech campus. The mission of the department is to maintain a beautiful and parking lots as per schedule. · Operate and maintain Calsense Irrigation Systems to water landscape

269

Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia  

E-Print Network [OSTI]

Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia Tech's 426 acre campus. The mission of the department is to maintain landscape and Couch Park. · Install and maintain traffic signs, crosswalks, street signs, etc. · Plant

270

Prioritizing Areas of the Conasauga River Sub-basin in Georgia and Tennessee for Preservation and Restoration  

E-Print Network [OSTI]

controversial (Simon et al., 2007). Here we define restoration to mean direct modification of stream channels. Because both land preservation and stream restoration are expensive tools, there is a general public and Restoration SETH J. WENGER1,*, MEGAN M. HAGLER2, AND BYRON J. FREEMAN3 1University of Georgia River Basin

Rosemond, Amy Daum

271

Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation Exercise  

Broader source: Energy.gov [DOE]

COVINGTON, Ga. – Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help them prepare for an actual incident.

272

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network [OSTI]

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Boyer, Edmond

273

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

274

Results of a baseflow tritium survey of surface water in Georgia across from the Savannah River Site  

SciTech Connect (OSTI)

In October 1991 the Georgia Department of Natural Resources (GDNR) issued a press release notifying the public that tritium had been measured in elevated levels (1,200 - 1,500 pCi/1) in water samples collected from drinking water wells in Georgia across from the Savannah River Site in Aiken Co. South Carolina. None of the elevated results were above the Primary Drinking Water Standard for tritium of 20,000 pCi/l. The GDNR initiated 2 surveys to determine the source and extent of elevated tritium: (1) baseflow survey of surface water quality, and (2) well evaluation program. Results from the 2 surveys indicate that the tritium measured in groundwater wells in Georgia is not the result of a groundwater flow from South Carolina under the Savannah River and into Georgia. Atmospheric transport and consequent rainout and infiltration has resulted in an increase of tritium in the water-table aquifer in the vicinity. Water samples collected from drinking water wells believed to have been installed in the aquifer beneath the water-table aquifer were actually from the shallower water-table aquifer. Water samples collected from the wells contain the amount of tritium expected for the water-table aquifer in the sample area. The measured tritium levels in the well samples and baseflow samples do not exceed Primary Drinking Water Standards. Tritium levels in the water-table in Georgia will decline as the atmospheric releases from SRS decline, tritium undergoes natural decay, and infiltration water with less tritium flushes through the subsurface.

Nichols, R.L.

1993-03-03T23:59:59.000Z

275

Scintillating bolometers based on ZnMoO$_4$ and Zn$^{100}$MoO$_4$ crystals to search for 0$\  

E-Print Network [OSTI]

The technology of scintillating bolometers based on zinc molybdate (ZnMoO$_4$) crystals is under development within the LUMINEU project to search for 0$\

Poda, D V; Arnaud, Q; Augier, C; Benoît, A; Bergé, L; Boiko, R S; Bergmann, T; Blümer, J; Broniatowski, A; Brudanin, V; Camus, P; Cazes, A; Censier, B; Chapellier, M; Charlieux, F; Chernyak, D M; Coron, N; Coulter, P; Cox, G A; Danevich, F A; de Boissière, T; Decourt, R; De Jesus, M; Devoyon, L; Drillien, A -A; Dumoulin, L; Eitel, K; Enss, C; Filosofov, D; Fleischmann, A; Fourches, N; Gascon, J; Gastaldo, L; Gerbier, G; Giuliani, A; Gros, M; Hehn, L; Henry, S; Hervé, S; Heuermann, G; Humbert, V; Ivanov, I M; Juillard, A; Kéfélian, C; Kleifges, M; Kluck, H; Kobychev, V V; Koskas, F; Kozlov, V; Kraus, H; Kudryavtsev, V A; Sueur, H Le; Loidl, M; Magnier, P; Makarov, E P; Mancuso, M; de Marcillac, P; Marnieros, S; Marrache-Kikuchi, C; Menshikov, A; Nasonov, S G; Navick, X-F; Nones, C; Olivieri, E; Pari, P; Paul, B; Penichot, Y; Pessina, G; Piro, M C; Plantevin, O; Redon, T; Robinson, M; Rodrigues, M; Rozov, S; Sanglard, V; Schmidt, B; Shlegel, V N; Siebenborn, B; Strazzer, O; Tcherniakhovski, D; Tenconi, M; Torres, L; Tretyak, V I; Vagneron, L; Vasiliev, Ya V; Velazquez, M; Viraphong, O; Walker, R J; Weber, M; Yakushev, E; Zhang, X; Zhdankov, V N

2015-01-01T23:59:59.000Z

276

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

277

TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer  

SciTech Connect (OSTI)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

2008-01-01T23:59:59.000Z

278

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

279

NO. REV. MO. _ ALSEP/LCRU EMC Test Results  

E-Print Network [OSTI]

NO. REV. MO. ATM 1050 _ ALSEP/LCRU EMC Test Results PAGE 1 OF 10 DATE 19 August 1971 The results of the ALSEP/LCRU EMC test are reported in this ATM. C~.·--~ s--·~e'Jn~,__')!).Prepared by:__~~~"f--.;;.~-------- Approved by: ~JM.MD. ithian #12;NO. RIV. NO. ATM 1050 ALSEP/LCRU EMC Test Results 2 10PAGE OF Aall

Rathbun, Julie A.

280

Missouri Department of National Resources Energy Center Mo DNR | Open  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 -Energieprojekte GmbHMilo, Maine:Energy Information Energy Center Mo DNR Jump

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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281

IRRADIATION PERFORMANCE OF U-Mo MONOLITHIC FUEL  

SciTech Connect (OSTI)

High-performance research reactors require fuel that operates at high specific power to high fission density, but at relatively low temperatures. Research reactor fuels are designed for efficient heat rejection, and are composed of assemblies of thin-plates clad in aluminum alloy. The development of low-enriched fuels to replace high-enriched fuels for these reactors requires a substantially increased uranium density in the fuel to offset the decrease in enrichment. Very few fuel phases have been identified that have the required combination of very-high uranium density and stable fuel behavior at high burnup. UMo alloys represent the best known tradeoff in these properties. Testing of aluminum matrix U-Mo aluminum matrix dispersion fuel revealed a pattern of breakaway swelling behavior at intermediate burnup, related to the formation of a molybdenum stabilized high aluminum intermetallic phase that forms during irradiation. In the case of monolithic fuel, this issue was addressed by eliminating, as much as possible, the interfacial area between U-Mo and aluminum. Based on scoping irradiation test data, a fuel plate system composed of solid U-10Mo fuel meat, a zirconium diffusion barrier, and Al6061 cladding was selected for development. Developmental testing of this fuel system indicates that it meets core criteria for fuel qualification, including stable and predictable swelling behavior, mechanical integrity to high burnup, and geometric stability. In addition, the fuel exhibits robust behavior during power-cooling mismatch events under irradiation at high power.

M.K. Meyer; J. Gan; J.-F. Jue; D.D. Keiser; E. Perez; A. Robinson; D.M. Wachs; N. Woolstenhulme; G.L. Hofman; Y.-S. Kim

2014-04-01T23:59:59.000Z

282

Long-term corrosion of Cr-Mo steels in superheated steam at 482 and 538/sup 0/C. [21/4 Cr-1 Mo; 9 Cr-1 Mo; Sumitomo 9 Cr-2 Mo; Sandvik HT-9  

SciTech Connect (OSTI)

The corrosion of several Cr-Mo ferritic steels was investigated in superheated steam at an operating power plant. Tests were conducted at 482 and 538/sup 0/C (900 and 1000/sup 0/F) in a once-through loop for times up to 28,000 h. Chromium concentrations ranged from 2.0 to 11.3%, and the effect of surface preparation on corrosion was investigated. Only one of many specimens showed evidence of exfoliation at 482/sup 0/C, but at 538/sup 0/C exfoliation occurred on at least some of the specimens of most materials; the exceptions were the alloy with the highest chromium content (Sandvik HT-9), one heat of 9 Cr-1 Mo steel with the highest silicon content, and Sumitomo 9 Cr-2 Mo steel, which was in test for only 19,000 h. Parabolic oxidation kinetics adequately described the corrosion process for about the first year, after which corrosion rates were constant and lower than predicted from extrapolation of the initial part of the penetration versus time curves. With chromium concentrations between 2 and 9%, corrosion behavior was independent of chromium content, and corrosion was only slightly less with Sandvik HT-9. Corrosion was nearly independent of surface preparation, but in two cases the presence of mill scale on the surface prior to steam exposure seemed to retard oxidation in steam. 11 figures, 5 tables.

Griess, J.C.; DeVan, J.H.; Maxwell, W.A.

1980-01-01T23:59:59.000Z

283

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

of operation of the AFO. CNMPs for permitted AFOs require assessment of risks related to phosphorous application. In Georgia, the use of a P-Index will be used to assess site-specific risks for phosphorous

Navara, Kristen

284

E-Print Network 3.0 - atlanta Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Gas Light, Bellsouth, Georgia Power, Atlanta Water, and cable. Updated 102008 ELECTRIC & FIBER Source: Li, Mo - School of Materials Science and Engineering, Georgia...

285

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

286

Enrichment of trace elements in rare-metal bearing pegmatites of the muscovite class: Examples from the Jasper, Thomaston-Barnesville, Troup and Cherokee-Pickens districts in Georgia  

SciTech Connect (OSTI)

Pegmatites from four important mining districts in Georgia: the Cherokee-Pickens district (mica and beryl), the Thomaston-Barnesville (mica), Troup (beryl), and Jasper County (feldspar) districts, generally contain quartz, muscovite, K-feldspar and oligoclase and can be included in the muscovite class of pegmatites. No source intrusions are known for any of these pegmatite districts. The Thomaston-Barnesville district covers about 2,000 km[sup 2] compared to the < 100 km[sup 2] of the other three districts and includes 3--4 times as many pegmatites as each of the other districts. The more highly fractionated pegmatites represent 42 to 48 % of the total number of pegmatites sampled in each district except for the Thomaston-Barnesville district in which only 7 % are more highly fractionated. Muscovites from the more highly fractionated pegmatites in these districts contain mean trace element values of 1,118--1,732 ppm Rb, 1,867--3,083 ppm F, 91--278 ppm Li, 7.7-31 ppm Be, 122--147 ppm Ga, 122--315 ppm Nb, and 137--254 ppm Zn. These pegmatites have mean Ba/Rb and Rb/K[sub 2]O ratios of 0.01--0.21 and 129--177 ppm. Mean Ba is 19--234 ppm. Mean trace element values of muscovites from the least fractionated pegmatites are 381--675 ppm Rb, 748--1,622 ppm F, 33--221 ppm Li, 4:8--20.6 ppm Be, 56--80 ppm Ga, 32--152 ppm Nb, and 59--113 ppm Zn. These pegmatites have mean Ba/Rb and Rb/K[sub 2]O ratios of 0.44--2.83 and 39--76. Mean Ba is 218--857 ppm. In each district, the more highly fractionated pegmatites contain beryl or are in the vicinity of beryl-bearing pegmatites.

Cocker, M.D. (Georgia Geologic Survey, Atlanta, GA (United States))

1992-01-01T23:59:59.000Z

287

1 Di Neujahr 1 Fr 1 Fr 1 Mo Ostermontag 2 Mi 2 Sa 2 Sa 2 Di  

E-Print Network [OSTI]

1 Di Neujahr 1 Fr 1 Fr 1 Mo Ostermontag 2 Mi 2 Sa 2 Sa 2 Di 3 Do 3 So 3 So 3 Mi 4 Fr 4 Mo 4 Mo 4 Do 5 Sa 5 Di 5 Di 5 Fr 6 So 6 Mi 6 Mi 6 Sa 7 Mo 7 Do 7 Do 7 So 8 Di 8 Fr 8 Fr 8 Mo 9 Mi 9 Sa 9 Sa 9 Di 10 Do 10 So 10 So 10 Mi 11 Fr 11 Mo 11 Mo 11 Do 12 Sa 12 Di 12 Di 12 Fr 13 So 13 Mi 13 Mi Power

Grübel, Rudolf

288

Single Phase Melt Processed Powellite (Ba,Ca) MoO{sub 4} For The Immobilization Of Mo-Rich Nuclear Waste  

SciTech Connect (OSTI)

Crystalline and glass composite materials are currently being investigated for the immobilization of combined High Level Waste (HLW) streams resulting from potential commercial fuel reprocessing scenarios. Several of these potential waste streams contain elevated levels of transition metal elements such as molybdenum (Mo). Molybdenum has limited solubility in typical silicate glasses used for nuclear waste immobilization. Under certain chemical and controlled cooling conditions, a powellite (Ba,Ca)MoO{sub 4} crystalline structure can be formed by reaction with alkaline earth elements. In this study, single phase BaMoO{sub 4} and CaMoO{sub 4} were formed from carbonate and oxide precursors demonstrating the viability of Mo incorporation into glass, crystalline or glass composite materials by a melt and crystallization process. X-ray diffraction, photoluminescence, and Raman spectroscopy indicated a long range ordered crystalline structure. In-situ electron irradiation studies indicated that both CaMoO{sub 4} and BaMoO{sub 4} powellite phases exhibit radiation stability up to 1000 years at anticipated doses with a crystalline to amorphous transition observed after 1 X 10{sup 13} Gy. Aqueous durability determined from product consistency tests (PCT) showed low normalized release rates for Ba, Ca, and Mo (<0.05 g/m{sup 2}).

Brinkman, Kyle [Savannah River Site (SRS), Aiken, SC (United States); Marra, James [Savannah River Site (SRS), Aiken, SC (United States); Fox, Kevin [Savannah River Site (SRS), Aiken, SC (United States); Reppert, Jason [Savannah River Site (SRS), Aiken, SC (United States); Crum, Jarrod [Paci fic Northwest National Laboratory , Richland, WA (United States); Tang, Ming [Los Alamos National Laboratory , Los Alamos, NM (United States)

2012-09-17T23:59:59.000Z

289

Georgia Waste Control Law (Georgia)  

Broader source: Energy.gov [DOE]

The Waste Control Law makes it unlawful to dump waste in any lakes, streams or surfaces waters of the State or on any private property without consent of the property owner. Waste is very broadly...

290

E-Print Network 3.0 - area glare sources Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

...2 C. Cherokee County, Georgia's Outdoor Lighting and Road Glare Ordinance... County, Ga., Outdoor...

291

High-performance MoS{sub 2} transistors with low-resistance molybdenum contacts  

SciTech Connect (OSTI)

In this Letter, molybdenum (Mo) is introduced and evaluated as an alternative contact metal to atomically-thin molybdenum disulphide (MoS{sub 2}), and high-performance field-effect transistors are experimentally demonstrated. In order to understand the physical nature of the interface and highlight the role of the various factors contributing to the Mo-MoS{sub 2} contacts, density functional theory (DFT) simulations are employed, which reveal that Mo can form high quality contact interface with monolayer MoS{sub 2} with zero tunnel barrier and zero Schottky barrier under source/drain contact, as well as an ultra-low Schottky barrier (0.1?eV) at source/drain-channel junction due to strong Fermi level pinning. In agreement with the DFT simulations, high mobility, high ON-current, and low contact resistance are experimentally demonstrated on both monolayer and multilayer MoS{sub 2} transistors using Mo contacts. The results obtained not only reveal the advantages of using Mo as a contact metal for MoS{sub 2} but also highlight the fact that the properties of contacts with 2-dimensional materials cannot be intuitively predicted by solely considering work function values and Schottky theory.

Kang, Jiahao; Liu, Wei; Banerjee, Kaustav, E-mail: kaustav@ece.ucsb.edu [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-03-03T23:59:59.000Z

292

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

293

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures  

SciTech Connect (OSTI)

In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

2014-01-13T23:59:59.000Z

294

Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire  

SciTech Connect (OSTI)

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-08T23:59:59.000Z

295

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

296

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

297

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

298

Georgia Tech offers an NIH graduate training program for the rational design of integrative biomaterials (GTBioMAT). This interdisciplinary program will train the next generation of predoctoral students in the inter-disciplinary field of  

E-Print Network [OSTI]

Georgia Tech offers an NIH graduate training program for the rational design of integrative information. NIH INTERDISCIPLINARY TRAINING PROGRAM IN BIOMATERIALS Graduate Training for Rationally Designed

Li, Mo

299

Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper Science and Technology; Georgia Institute of Technology, Atlanta, GA.  

E-Print Network [OSTI]

Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper lignocellulosics to biodiesel fuel Feedstocks ABSTRACT This poster examines the potential of utilizing waste paper CelluloseHemicelluloseLigninResource Cracking and Refining of Polysaccharides Bio-Diesel Substitutes

300

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
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301

InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall  

E-Print Network [OSTI]

°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

Woodall, Jerry M.

302

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network [OSTI]

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

303

2011 Planning Committee Roster 15thAnnualGeorgiaTechFaultandDisturbanceAnalysisConference  

E-Print Network [OSTI]

Tucker GA 30084-5336 770-270-7737 (phone) 404-226-7803 (cell) marlin.browning@gatrans.com Phillip L.m@gatech.edu Tony Napikoski United Illuminating 6 Armstrong Road Shelton, CT 06484 203-926-4618 (phone) 203

Bennett, Gisele

304

Simple Molybdenum(IV) Olefin Complexes of the Type Mo(NR)(X)(Y)(olefin)  

E-Print Network [OSTI]

Exposure of heptane solutions of Mo(NAr)(CHCMe2Ph)(Me2Pyr)(OAr) (1a; Ar = 2,6-diisopropylphenyl), Mo(NAr)(CHCMe3)(Me2Pyr)[OCMe(CF3)2] (1b), and Mo(NAr)(CHCMe2Ph)(Me2Pyr)(OSiPh3) (1c) to one atmosphere of ethylene for 12 h ...

Marinescu, Smaranda C.

305

Greenfield Alternative Study LEU-Mo Fuel Fabrication Facility  

SciTech Connect (OSTI)

This report provides the initial “first look” of the design of the Greenfield Alternative of the Fuel Fabrication Capability (FFC); a facility to be built at a Greenfield DOE National Laboratory site. The FFC is designed to fabricate LEU-Mo monolithic fuel for the 5 US High Performance Research Reactors (HPRRs). This report provides a pre-conceptual design of the site, facility, process and equipment systems of the FFC; along with a preliminary hazards evaluation, risk assessment as well as the ROM cost and schedule estimate.

Washington Division of URS

2008-07-01T23:59:59.000Z

306

Structural Insights into FeMo Cofactor Biosynthesis  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administrationcontroller systemsBiSiteNeutronStrategic PlanStructuralMethodologyInsights into FeMo

307

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

308

Conceptual design of a new homogeneous reactor for medical radioisotope Mo-99/Tc-99m production  

SciTech Connect (OSTI)

To partly solve the global and regional shortages of Mo-99 supply, a conceptual design of a nitrate-fuel-solution based homogeneous reactor dedicated for Mo-99/Tc-99m medical radioisotope production is proposed. The modified LEU Cintichem process for Mo-99 extraction which has been licensed and demonstrated commercially for decades by BATAN is taken into account as a key design consideration. The design characteristics and main parameters are identified and the advantageous aspects are shown by comparing with the BATAN's existing Mo-99 supply chain which uses a heterogeneous reactor (RSG GAS multipurpose reactor)

Liem, Peng Hong [Nippon Advanced Information Service (NAIS Co., Inc.) Scientific Computational Division, 416 Muramatsu, Tokaimura, Ibaraki (Japan); Tran, Hoai Nam [Chalmers University of Technology, Dept. of Applied Physics, Div. of Nuclear Engineering, SE-412 96 Gothenburg (Sweden); Sembiring, Tagor Malem [National Nuclear Energy Agency (BATAN), Center for Reactor Technology and Nuclear Safety, Kawasan Puspiptek, Serpong, Tangerang Selatan, Banten (Indonesia); Arbie, Bakri [PT MOTAB Technology, Kedoya Elok Plaza Blok DA 12, Jl. Panjang, Kebun Jeruk, Jakarta Barat (Indonesia)

2014-09-30T23:59:59.000Z

309

Oxidation Behavior of Mo-Si-B Alloys in Wet Air  

SciTech Connect (OSTI)

Multiphase composite alloys based on the Mo-Si-B system are candidate materials for ultra-high temperature applications. In non load-bearing uses such as thermal barrier coatings or heat exchangers in fossil fuel burners, these materials may be ideally suited. The present work investigated the effect of water vapor on the oxidation behavior of Mo-Si-B phase assemblages. Three alloys were studied: Alloy 1 = Mo{sub 5}Si{sub 3}B{sub x} (T1)- MoSi{sub 2}- MoB, Alloy 2 = T1- Mo{sub 5}SiB{sub 2} (T2)- Mo{sub 3}Si, and Alloy 3 = Mo- T2- Mo{sub 3}Si. Tests were conducted at 1000 and 1100C in controlled atmospheres of dry air and wet air nominally containing 18, 55, and 150 Torr H{sub 2}O. The initial mass loss of each alloy was approximately independent of the test temperature and moisture content of the atmosphere. The magnitude of these initial losses varied according to the Mo content of the alloys. All alloys formed a continuous, external silica scale that protected against further mass change after volatilization of the initially formed MoO{sub 3}. All alloys experienced a small steady state mass change, but the calculated rates cannot be quantitatively compared due to statistical uncertainty in the individual mass measurements. Of particular interest is that Alloy 3, which contains a significant volume fraction of Mo metal, formed a protective scale. All alloys formed varying amounts of subscale Mo and MoO{sub 2}. This implies that oxygen transport through the external silica scale has been significantly reduced. For all alloys, water vapor accelerated the growth of a multiphase interlayer at the silica scale/unoxidized alloy interface. This interlayer is likely composed of fine Mo and MoO{sub 2} that is dispersed within a thin silica matrix. Alloy 3 was particularly sensitive to water accelerated growth of this interlayer. At 1100 C, the scale thickness after 300 hours increased from about 20 mm in dry air to nearly 100 mm in wet air.

M. Kramer; A. Thom; O. Degirmen; V. Behrani; M. Akinc

2002-04-22T23:59:59.000Z

310

Experimental activities supporting commercial U.S. accelerator production of 99-Mo  

SciTech Connect (OSTI)

{sup 99m}Tc, the daughter product of {sup 99}Mo, is the most commonly used radioisotope for nuclear medicine in the U.S. Experiments are being performed at Los Alamos National Laboratory and Argonne National Laboratory to demonstrate production of {sup 99}Mo using accelerators. The {sup 100}Mo({gamma},n){sup 99}Mo reaction in an enriched {sup 100}Mo target is currently under investigation. Three scaled low-power production experiments using a 20-MeV electron linac at Argonne have been performed to date. Two of these experiments used natural Mo targets and produced a total of 613 {mu}C of {sup 99}Mo. The third experiment used an enriched {sup 100}Mo target and produced 10.5 mCi of {sup 99}Mo. Following irradiation the targets were dissolved and the low specific activity solution was processed through an ARSII generator from NorthStar Medical Radioisotopes. Yields of {sup 99m}Tc >95% have been observed.

Dale, Gregory E [Los Alamos National Laboratory; Chemerisov, Sergey D [ANL; Vandegrift, George F [ANL

2010-01-01T23:59:59.000Z

311

Reaction propagation physics of AL/Mo0? nanocomposite thermites.  

SciTech Connect (OSTI)

Recent advances in the field of nmo-technology have focused intense interest on developing nano-scale energetic materials with potentially new and technologically useful characteristics. Despite the growing importance of nano-scale energetic materials, however, general combustion chmcteristics of ithese materials are not yet well characterized or understood. This study experimentally examines the mechanisms and phenomena that govern thermal and chemical proce!;ses associated with nano-structured energetic material combustion. Specifically, the general combusticm behavior of nanocornposite Al/MoO3 samples was observed. The composite material was prepared fiom nano-scale aluminum and molybdenum trioxide. Open combustion and confined burning were considered. Ai/Mo03 powder or pellet samples were ignited at one end in an open burxi tway and a high-speed imaging system recorded the flame propagation. Reaction behaviors were characterized from this photographic data. The goal was to obtain an improved understanding of flow pattenis (e.g., flame propagation mechanisms) associated with nano-structured energetic materials. These materials are shown to propagate at very high rates (>I 00 ids). E3ulk density effects on propagation rate iri these materials were found to be significant. Results from this study, and continuing work, could have an impact on the handling and application of nano-scala mergetic materials, and will eventually lead to a significantly improved understanding of this class of materials.

Asay, B. W. (Blaine W.); Busse, J. R. (James R.); Jorgensen, B. S. (Betty S.); Bockmon, B. (Bryan); Pantoya, M. (Michelle); Son, S. F. (Steven F.)

2001-01-01T23:59:59.000Z

312

Characterization of U-Mo Foils for AFIP-7  

SciTech Connect (OSTI)

Twelve AFIP in-process foil samples, fabricated by either Y-12 or LANL, were shipped from LANL to PNNL for potential characterization using optical and scanning electron microscopy techniques. Of these twelve, nine different conditions were examined to one degree or another using both techniques. For this report a complete description of the results are provided for one archive foil from each source of material, and one unirradiated piece of a foil of each source that was irradiated in the Advanced Test Reactor. Additional data from two other LANL conditions are summarized in very brief form in an appendix. The characterization revealed that all four characterized conditions contained a cold worked microstructure to different degrees. The Y-12 foils exhibited a higher degree of cold working compared to the LANL foils, as evidenced by the highly elongated and obscure U-Mo grain structure present in each foil. The longitudinal orientations for both of the Y-12 foils possesses a highly laminar appearance with such a distorted grain structure that it was very difficult to even offer a range of grain sizes. The U-Mo grain structure of the LANL foils, by comparison, consisted of a more easily discernible grain structure with a mix of equiaxed and elongated grains. Both materials have an inhomogenous grain structure in that all of the characterized foils possess abnormally coarse grains.

Edwards, Danny J.; Ermi, Ruby M.; Schemer-Kohrn, Alan L.; Overman, Nicole R.; Henager, Charles H.; Burkes, Douglas; Senor, David J.

2012-11-07T23:59:59.000Z

313

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires  

SciTech Connect (OSTI)

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14T23:59:59.000Z

314

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template  

SciTech Connect (OSTI)

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-12-19T23:59:59.000Z

315

REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based  

E-Print Network [OSTI]

the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit), metal oxide varistor (MOV), and transient voltage suppressor (TVS) diodes are the state-of-the- artREGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal­Semiconductor­Metal

Chow, Lee

316

Supercapacitor behavior of ?-MnMoO{sub 4} nanorods on different electrolytes  

SciTech Connect (OSTI)

Graphical abstract: SEM image of ?-MnMoO{sub 4} nanorods on FTO substrate. Highlights: ? Synthesis of ?-MnMoO{sub 4} nanorods by spin coating method. ? First study on the effect of electrolyte on the pseudocapacitance behavior. ? ?-MnMoO{sub 4} nanorods exhibit maximum specific capacitance of 998 F/g. ? At higher scan rates p-TSA electrolyte exhibits superior capacitive behavior. -- Abstract: ?-MnMoO{sub 4} nanorods were prepared on conducting glass substrate via sol–gel spin coating method at the optimum doping level. The effect of electrolyte on the pseudocapacitance behavior of the ?-MnMoO{sub 4} nanorods was studied using para toluene sulfonic acid (p-TSA), sulfuric acid (H{sub 2}SO{sub 4}) and hydrochloric acid (HCl) as electrolytes. X-ray diffraction analysis reveals the formation of ?-MnMoO{sub 4} in monoclinic phase. FTIR spectra contain vibrational bands associated with Mo=O, M–O and Mo–O–Mo bonds. SEM image reveals the formation of nanorods. Supercapacitor behavior has been studied using cyclic voltammetry (CV) analysis. ?-MnMoO{sub 4} nanorods exhibit maximum specific capacitance of 998 F/g at a scan rate of 5 mV/s in H{sub 2}SO{sub 4} electrolyte while a specific capacitance of 784 F/g and 530 F/g have been obtained using p-TSA and HCl electrolytes, respectively. At higher scan rates p-TSA electrolyte exhibits superior capacitive behavior than H{sub 2}SO{sub 4}.

Purushothaman, K.K., E-mail: purushoth_gri@yahoo.co.in [Department of Physics, TRP Engineering College (SRM Group), Irungalur, Trichy, Tamilnadu (India); Cuba, M. [Department of Physics, Gandhigram Rural Institute – Deemed University, Gandhigram, Tamilnadu (India)] [Department of Physics, Gandhigram Rural Institute – Deemed University, Gandhigram, Tamilnadu (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute – Deemed University, Gandhigram, Tamilnadu (India)

2012-11-15T23:59:59.000Z

317

Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors  

SciTech Connect (OSTI)

Metglas{sup TM} 2826MB foils of 25-30 {mu}m thickness with the composition of Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18} have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of {approx}3 {mu}m thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum (Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magnetic properties of FeNi is also observed as the Mo dopant level increases. The coercivity of FeNi films doped with Mo decreases to a value less than one third of the value without dopant. Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropy properties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The film material that is fabricated using an optimized process is magnetically as soft as amorphous Metglas{sup TM} 2826MB with a coercivity of less than 40 Am{sup -1}. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin film materials on their magnetic properties.

Liang Cai; Gooneratne, Chinthaka; Cha, Dongkyu; Chen Long; Kosel, Jurgen [Computer Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, 4700 KAUST, Thuwal 23955 (Saudi Arabia); Gianchandani, Yogesh [Department of Electrical Engineering and Computer Science, 1301 Beal Ave., University of Michigan, Ann Arbor, Michigan 48109 (United States)

2012-12-01T23:59:59.000Z

318

Community Energy Systems and the Law of Public Utilities. Volume Twelve. Georgia  

SciTech Connect (OSTI)

A detailed description of the laws and programs of the State of Georgia governing the regulation of public energy utilities, the siting of energy generating and transmission facilities, the municipal franchising of public energy utilities, and the prescription of rates to be charged by utilities including attendant problems of cost allocations, rate base and operating expense determinations, and rate of return allowances. These laws and programs are analyzed to identify impediments which they may present to the implementation of Integrated Community Energy Systems (ICES). This report is one of fifty-one separate volumes which describe such regulatory programs at the Federal level and in each state as background to the report entitled Community Energy Systems and the Law of Public Utilities - Volume One: An Overview. This report also contains a summary of a strategy described in Volume One - An Overview for overcoming these impediments by working within the existing regulatory framework and by making changes in the regulatory programs to enhance the likelihood of ICES implementation.

Feurer, D A; Weaver, C L

1981-01-01T23:59:59.000Z

319

Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

320

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets  

SciTech Connect (OSTI)

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

2014-09-21T23:59:59.000Z

322

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

323

Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)  

SciTech Connect (OSTI)

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2013-12-02T23:59:59.000Z

324

Quantum confinement in GaP nanoclusters  

SciTech Connect (OSTI)

We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

Laurich, B.K.; Smith, D.C.; Healy, M.D.

1994-06-01T23:59:59.000Z

325

Corrosion Behavior of Solution-Annealed CoCrMo Medical Implant  

E-Print Network [OSTI]

! ! ! Corrosion Behavior of Solution- Annealed CoCrMo Medical Implant Alloys Pooja Panigrahi University June 6, 2011 #12;! ! ""! Corrosion Behavior of Solution-Annealed CoCrMo Medical Implant Alloys and Applied Sciences Northwestern University June 6, 2011 Abstract Corrosion behavior of solution annealed

Shull, Kenneth R.

326

Posting type Advisory Subject Shifts in Mo-anode XRF element calibration factors  

E-Print Network [OSTI]

Posting type Advisory Subject Shifts in Mo-anode XRF element calibration factors Module/Species A@crocker.ucdavis.edu Supporting information A molybdenum-anode XRF instrument is used to analyze the heavier elements (Ni, Cu, Zn with lighter deposits were acquired and used in the Mo-anode XRF system. The new calibration foils resulted

Fischer, Emily V.

327

Kinetic, Mechanistic, and Spectroscopic Studies of the Mo/Cu Containing CO dehydrogenase of Oligotropha carboxidovorans  

E-Print Network [OSTI]

et. al. where active site models [Tp iPr MoO(OAr)(?-S)Cu(triazacyclononane) (Tp iPr ) = hydrotris(3-isopropylpyrazol-of CO dehydrogenase: [Tp iPr Mo (V) (O)(OAr)(?-S)Cu (I) (Me

Wilcoxen, Jarett Michael

2013-01-01T23:59:59.000Z

328

Ligand Conjugation of Chemically Exfoliated MoS2 Stanley S. Chou,+  

E-Print Network [OSTI]

Ligand Conjugation of Chemically Exfoliated MoS2 Stanley S. Chou,+ Mrinmoy De,+ Jaemyung Kim,+ Segi and chemical properties. Here, we demonstrate ligand conjugation of chemically exfoliated MoS2 using thiol-nitrilotriacetic acid chelation.13 However, colloidal sur- face modification of water dispersible, chemically exfoliated

Huang, Jiaxing

329

MoIAC Pre-Audit Form Ways to submit this form  

E-Print Network [OSTI]

information: #12;MoIAC Pre-Audit Form Major Energy Consuming Equipment: Please provide informationMoIAC Pre-Audit Form Ways to submit this form: 1. Fill up the form and fax it to 573-882-2693 Attn: Dr. Bin Wu 2. Print and return this form by mail to: Dr. Bin Wu University of Missouri

Noble, James S.

330

Stability of Graphene doping with MoO_3 and I_2  

E-Print Network [OSTI]

We dope graphene by evaporation of MoO_3 or by solution-deposition of I_2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that Mo...

D’Arsié, Lorenzo; Esconjauregui, Santiago; Weatherup, Robert; Guo, Yuzheng; Bhardwaj, Sunil; Centeno, Alba; Zurutuza, Amaia; Cepek, Cinzia; Robertson, John

2014-09-08T23:59:59.000Z

331

Student Financial Aid 11 Jesse Hall University of Missouri Columbia Columbia, MO 65211-1600  

E-Print Network [OSTI]

Student Financial Aid 11 Jesse Hall University of Missouri ­ Columbia Columbia, MO 65211-1600 PHONE;Student Financial Aid 11 Jesse Hall University of Missouri ­ Columbia Columbia, MO 65211-1600 PHONE (573 ________________________________________________________________________________________________________________________ Name of Host Institution (College or University you will be attending or taking additional classes

Taylor, Jerry

332

Development of LEU targets for {sup 99}Mo production and their chemical processing status 1993  

SciTech Connect (OSTI)

Most of the world`s supply of {sup 99m}{Tc} for medical purposes is currently produced from {sup 99}Mo derived from the fastening of high enriched uranium (HEU). Substitution of low enriched uranium (LEU) silicide fuel for the HEU alloy and aluminide fuels used in current target designs will allow equivalent {sup 99}Mo yields with little change in target geometries. Substitution of uranium metal for uranium oxide films in other target designs will also allow the substitution of LEU for HEU. In 1993, DOE renewed funding that was terminated in 1990 for development of LEU targets for {sup 99}Mo production. During the past year, our efforts were to (1) renew contact with {sup 99}Mo producers, (2) define the means to test our process for recovering {sup 99}Mo from irradiated LEU-silicide targets, and (3) begin to test our process on spent LEU-silicide miniplates stored at ANL from past fuel development studies.

Vandegrift, G.F.; Hutter, J.C.; Srinivasan, B.; Matos, J.E.; Snelgrove, J.L.

1993-10-01T23:59:59.000Z

333

Electrical properties of a-C:Mo films produced by dual-cathode filtered cathodic arc plasma deposition  

E-Print Network [OSTI]

and Related Materials Electrical properties of a-C:Mo filmsNo. DE-AC02-05CH11231. Electrical properties of a-C:Mo filmsair. Film resistivity and electrical activation energy were

Sansongsiri, Sakon

2008-01-01T23:59:59.000Z

334

Electronic Structure Description of the Cis-MoOS Unit in Models for Molybdenum Hydroxylases  

SciTech Connect (OSTI)

The molybdenum hydroxylases catalyze the oxidation of numerous aromatic heterocycles and simple organics and, unlike other hydroxylases, utilize water as the source of oxygen incorporated into the product. The electronic structures of the cis-MoOS units in CoCp{sub 2}[Tp{sup iPr}Mo{sup V}OS(OPh)] and Tp{sup iPr}Mo{sup VI}OS(OPh) (Tp{sup iPr} = hydrotris(3-isopropylpyrazol-1-yl)borate), new models for molybdenum hydroxylases, have been studied in detail using S K-edge X-ray absorption spectroscopy, vibrational spectroscopy, and detailed bonding calculations. The results show a highly delocalized Mo {double_bond} S {pi}* LUMO redox orbital that is formally Mo(d{sub xy}) with {approx}35% sulfido ligand character. Vibrational spectroscopy has been used to quantitate Mo-S{sub sulfido} bond order changes in the cis-MoOS units as a function of redox state. Results support a redox active molecular orbital that has a profound influence on MoOS bonding through changes to the relative electro/nucleophilicity of the terminal sulfido ligand accompanying oxidation state changes. The bonding description for these model cis-MoOS systems supports enzyme mechanisms that are under orbital control and dominantly influenced by the unique electronic structure of the cis-MoOS site. The electronic structure of the oxidized enzyme site is postulated to play a role in polarizing a substrate carbon center for nucleophilic attack by metal activated water and acting as an electron sink in the two-electron oxidation of substrates.

Doonan, C.J.; Rubie, N.D.; Peariso, K.; Harris, H.H.; Knottenbelt, S.Z.; George, G.N.; Young, C.G.; Kirk, M.L.; /New Mexico U. /Melbourne U. /SLAC, SSRL

2009-04-29T23:59:59.000Z

335

Phase transformation of ZnMoO{sub 4} by localized thermal spike  

SciTech Connect (OSTI)

We show that ZnMoO{sub 4} remains in stable phase under thermal annealing up to 1000?°C, whereas it decomposes to ZnO and MoO{sub 3} under transient thermal spike induced by 100?MeV Ag irradiation. The transformation is evidenced by X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Thin films of ZnMoO{sub 4} were synthesized by thermal evaporation and subsequent annealing in oxygen ambient at 600?°C for 4?h. XRD results show that as the irradiation fluence increases, the peak related to ZnMoO{sub 4} decreases gradually and eventually disappear, whereas peaks related to ZnO grow steadily up to fluence of 3?×?10{sup 12} ions/cm{sup 2} and thereafter remain stable till highest fluence. This indicates that polycrystalline ZnMoO{sub 4} film has transformed to polycrystalline ZnO thin film. The Raman lines related to ZnMoO{sub 4} are observed to have disappeared with increasing irradiation fluence. XPS results show modification in bonding and depletion of Mo from near surface region after the ion irradiation. Cross-sectional transmission electron microscopy result shows the formation of ion track of diameter 12–16?nm. These results demonstrate that ion beam methods provide the means to control phase splitting of ZnMoO{sub 4} to ZnO and MoO{sub 3} within nanometric dimension along the ion track. The observation of phase splitting and Mo loss are explained in the framework of ion beam induced thermal spike formalism.

Agarwal, D. C.; Avasthi, D. K.; Kabiraj, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Varma, S. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Kremer, Felipe; Ridgway, M. C. [Australian National University, Canberra ACT 0200 (Australia)

2014-04-28T23:59:59.000Z

336

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

337

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

338

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

339

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots  

SciTech Connect (OSTI)

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06T23:59:59.000Z

340

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes  

SciTech Connect (OSTI)

We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

2013-12-04T23:59:59.000Z

342

On strongly GA-convex functions and stochastic processes  

SciTech Connect (OSTI)

In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

2014-08-20T23:59:59.000Z

343

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

344

Georgia Power`s Plant Yates CT-121 demonstration performance results  

SciTech Connect (OSTI)

The Chiyoda CT-121 demonstration project, being conducted at Georgia Power`s Plant Yates` 100 MWe Unit 1, is an evaluation of a unique wet-limestone, forced-oxidized FGD process and is a part of the Innovative Clean Coal Technology (ICCT) program. The CT-121 process uses a single unique absorber vessel made entirely of fiberglass reinforced plastics called a jet bubbling reactor (JBR). The JBR allows concurrent completion of all the necessary reactions to remove sulfur dioxide from the flue gas and to precipitate a gypsum byproduct. This paper will discuss the results of the low-particulate test phase, including the effects of higher-sulfur coal, as well as initial results from the high-particulate test phase (existing electrostatic precipitator deenergized). DOE-sponsored air toxics testing has also been conducted, but final results were not available at the time of this writing. A discussion of limestone selection and its impact on the dewatering properties of the CT-121 gypsum byproduct is also included. Performance results emphasize the efficiency, reliability, and flexibility of the CT-121 process. Preliminary testing of the CT-121 process at Plant Yates has produced excellent performance results. The process has proven itself capable of exceeding its design SO{sub 2} removal efficiency specification of 90%, both with and without the ESP in service. The process has also achieved SO{sub 2} removal efficiencies of greater than 98%. Particulate measurements, conducted with the ESP deenergized, have established the capability of the CT-121 process to remove over 99% of the boiler`s particulate emissions at 100% boiler load.

Burford, D.P. [Southern Co. Services, Inc., Birmingham, AL (United States); Pearl, I.G. [Radian Corp., Tucker, GA (United States)

1994-12-31T23:59:59.000Z

345

Solar energy system performance evaluation: final report for Honeywell OTS 41, Shenandoah (Newnan), Georgia  

SciTech Connect (OSTI)

The operation and technical performance of the Solar Operational Test Site (OTS 41) located at Shenandoah, Georgia, are described, based on the analysis of data collected between January and August 1981. The following topics are discussed: system description, performance assessment, operating energy, energy savings, system maintenance, and conclusions. The solar energy system at OTS 41 is a hydronic heating and cooling system consisting of 702 square feet of liquid-cooled flat-plate collectors; a 1000-gallon thermal storage tank; a 3-ton capacity organic Rankine-cycle-engine-assisted air conditioner; a water-to-air heat exchanger for solar space heating; a finned-tube coil immersed in the storage tank to preheat water for a gas-fired hot water heater; and associated piping, pumps, valves, and controls. The solar system has six basic modes of operation and several combination modes. The system operation is controlled automatically by a Honeywell-designed microprocessor-based control system, which also provides diagnostics. Based on the instrumented test data monitored and collected during the 7 months of the Operational Test Period, the solar system collected 53 MMBtu of thermal energy of the total incident solar energy of 219 MMBtu and provided 11.4 MMBtu for cooling, 8.6 MMBtu for heating, and 8.1 MMBtu for domestic hot water. The projected net annual energy savings due to the solar system were approximately 50 MMBtu of fossil energy (49,300 cubic feet of natural gas) and a loss of 280 kWh(e) of electrical energy.

Mathur, A K; Pederson, S

1982-08-01T23:59:59.000Z

346

Landesque capital as an alternative to food storage in Melanesia: irrigated taro terraces in New Georgia, Solomon Islands  

E-Print Network [OSTI]

the Lapita littoral fringe, New Georgia, Solomon Islands, pp. 123-40 in Bedford, S., Sand, C. and Connaughton, S.P. (eds.), Oceanic Explorations: Lapita and Western Pacific Settlement. Canberra: Terra Australia 26, ANU E Press. Gollifer, D.E. and Booth... , and the ruta survey team from Mase (Rendol Reke, Leeman Piano, Antony Tupiti and Presah Koba). We are also grateful to Kylie Moloney and Bernadette Hince for their assistance with archival work in Canberra, and Philip Stickler (Cambridge) for his help...

Bayliss-Smith, Tim; Hviding, Edvard

2014-11-07T23:59:59.000Z

347

Engineering Study for a Full Scale Demonstration of Steam Reforming Black Liquor Gasification at Georgia-Pacific's Mill in Big Island, Virginia  

SciTech Connect (OSTI)

Georgia-Pacific Corporation performed an engineering study to determine the feasibility of installing a full-scale demonstration project of steam reforming black liquor chemical recovery at Georgia-Pacific's mill in Big Island, Virginia. The technology considered was the Pulse Enhanced Steam Reforming technology that was developed and patented by Manufacturing and Technology Conversion, International (MTCI) and is currently licensed to StoneChem, Inc., for use in North America. Pilot studies of steam reforming have been carried out on a 25-ton per day reformer at Inland Container's Ontario, California mill and on a 50-ton per day unit at Weyerhaeuser's New Bern, North Carolina mill.

Robert De Carrera; Mike Ohl

2002-03-19T23:59:59.000Z

348

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network [OSTI]

Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

Carroll, James Mason

2012-06-07T23:59:59.000Z

349

Height stabilization of GaSb/GaAs quantum dots by Al-rich capping  

SciTech Connect (OSTI)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-09-01T23:59:59.000Z

350

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates  

SciTech Connect (OSTI)

The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

2013-05-07T23:59:59.000Z

351

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

352

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network [OSTI]

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

353

AlGaAs/GaAs photovoltaic converters for high power narrowband radiation  

SciTech Connect (OSTI)

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

2014-09-26T23:59:59.000Z

354

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

355

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

356

Investigation of the optical properties of MoS{sub 2} thin films using spectroscopic ellipsometry  

SciTech Connect (OSTI)

Spectroscopic ellipsometry (SE) characterization of layered transition metal dichalcogenide (TMD) thin films grown by vapor phase sulfurization is reported. By developing an optical dispersion model, the extinction coefficient and refractive index, as well as the thickness of molybdenum disulfide (MoS{sub 2}) films, were extracted. In addition, the optical band gap was obtained from SE and showed a clear dependence on the MoS{sub 2} film thickness, with thinner films having a larger band gap energy. These results are consistent with theory and observations made on MoS{sub 2} flakes prepared by exfoliation, showing the viability of vapor phase derived TMDs for optical applications.

Yim, Chanyoung; O'Brien, Maria; Winters, Sinéad [School of Chemistry, Trinity College Dublin, Dublin 2 (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); McEvoy, Niall [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Mirza, Inam; Lunney, James G. [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Duesberg, Georg S., E-mail: duesberg@tcd.ie [School of Chemistry, Trinity College Dublin, Dublin 2 (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Advanced Materials and BioEngineering Research (AMBER) Centre, Trinity College Dublin, Dublin 2 (Ireland)

2014-03-10T23:59:59.000Z

357

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

358

Determination of Mass Attenuation Coefficients for CuInSe2 and CuGaSe2 Semiconductors  

SciTech Connect (OSTI)

This work presents mass attenuation coefficients values of CuInSe2 and CuGaSe2 semiconductor thin films commonly used in photovoltaic devices. The mass attenuation coefficients were measured at different energies from 11.9 to 37.3 keV by using the secondary excitation method. Monochromatic photons were obtained using the Br, Sr, Mo, Cd, Te, Ba and Nd secondary targets. 59.5 keV gamma rays emitted from an annular Am-241 radioactive source were used to excite secondary targets. Characteristic X-rays emitted from secondary target were counted by a Si(Li) detector with a resolution of 0.16 keV at 5.9 keV. The measured values were compared with theoretical values calculated using WinXCOM program.

Celik, Ahmet; Cevik, Ugur; Baltas, Hasan; Bacaksiz, Emin [Department of Physics, Faculty of Arts and Sciences, Karadeniz Technical University, 61080 Trabzon (Turkey)

2007-04-23T23:59:59.000Z

359

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

360

Density functional theory investigation of the electronic structure and thermoelectric properties of layered MoS{sub 2}, MoSe{sub 2} and their mixed-layer compound  

SciTech Connect (OSTI)

First principles density functional theory calculations were carried out for the 2H-MoQ{sub 2} (Q=S and Se) and their hypothetical mixed-layer compound. Due to the different electronegativities of S and Se atoms on MoQ{sub 2}, the band gap size could be adjusted in mixed-layer compound MoS{sub 2}/MoSe{sub 2}. Also, the indirect band gap in pure MoQ{sub 2} compounds is changed to the pseudo direct band gap in mixed-layer MoS{sub 2}/MoSe{sub 2} which is similar to the monolayer compound. The layer mixing enhances the thermoelectric properties because of the increased density of states around the Fermi level and the decreased band gap size. Therefore, we suggest that this layer mixing approach should be regarded as a useful way to modulate their electronic structures and to improve their thermoelectric properties. -- Graphical abstract: On the basis of density functional calculations we predict that the mixed-layer compounds 2H-MoS{sub 2}/2H-MoSe{sub 2}, in which two different layers 2H-MoS{sub 2} and 2H-MoSe{sub 2}, have enhanced thermoelectric properties because of the increased density of states around the Fermi level and the decreased band gap size. Highlights: • We explored a way of improving TE properties of 2H-MoQ{sub 2} on DFT methods. • The mixed-layer compounds MoS{sub 2}/MoSe{sub 2} have enhanced thermoelectric properties. • This is caused by modulated electronic structure of mixed layer compound. • Layer mixing approach should be regarded as a useful way to improve TE properties.

Lee, Changhoon; Hong, Jisook [Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Lee, Wang Ro [Faculty of Liberal Education, Chonbuk National University, Jeonju, Jeonbuk 561-756 (Korea, Republic of); Kim, Dae Yeon [Agency for Defense Development (ADD), Chinhae, Kyungnam 645-600 (Korea, Republic of); Shim, Ji Hoon, E-mail: jhshim@postech.ac.kr [Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Divisions of Advanced Nuclear Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

2014-03-15T23:59:59.000Z

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

High damage-resistant Mo mirror for high-power TEA CO/sub 2/ laser systems  

SciTech Connect (OSTI)

A high-purity molybdenum (Mo) mirror was developed by an electron-beam melting method (e.b.m. Mo mirror). For high-power TEA CO/sub 2/ laser, the e.b.m. Mo mirror has two to four times higher surface damage threshold than that of an Au-coated glass mirror and three times longer lifetime than that of a powder metallurgy Mo mirror (p.m. Mo mirror) when laser energy density lower than 60 J/cm/sup 2/ was irradiated with a 0.5-pps repetition rate. It was found that the difference between the e.b.m. Mo mirror and the p.m. Mo mirror at the laser-damage threshold was due to the five surface without voids and the small amount of impurities.

Ichikawa, Y.; Yoshida, K.; Tsunawaki, Y.; Yamanaka, M.; Yamanaka, T.; Yamanaka, C.; Okamoto, H.; Matsusue, N.; Kitajima, K.

1987-09-01T23:59:59.000Z

362

Aboveground test of an advanced Li$_2$MoO$_4$ scintillating bolometer to search for neutrinoless double beta decay of $^{100}$Mo  

E-Print Network [OSTI]

Large lithium molybdate (Li$_2$MoO$_4$) crystal boules were produced by using the low thermal gradient Czochralski growth technique from deeply purified molybdenum. A small sample from one of the boules was preliminary characterized in terms of X-ray-induced and thermally-excited luminescence. A large cylindrical crystalline element (with a size of $\\oslash 40\\times40$ mm) was used to fabricate a scintillating bolometer, which was operated aboveground at $\\sim 15$ mK by using a pulse-tube cryostat housing a high-power dilution refrigerator. The excellent detector performance in terms of energy resolution and $\\alpha$ background suppression along with preliminary positive indications on the radiopurity of this material show the potentiality of Li$_2$MoO$_4$ scintillating bolometers for low-counting experiment to search for neutrinoless double beta decay of $^{100}$Mo.

T. B. Bekker; N. Coron; F. A. Danevich; V. Ya. Degoda; A. Giuliani; V. D. Grigorieva; N. V. Ivannikova; M. Mancuso; P. de Marcillac; I. M. Moroz; C. Nones; E. Olivieri; G. Pessina; D. V. Poda; V. N. Shlegel; V. I. Tretyak; M. Velazquez

2014-12-17T23:59:59.000Z

363

Aboveground test of an advanced Li$_2$MoO$_4$ scintillating bolometer to search for neutrinoless double beta decay of $^{100}$Mo  

E-Print Network [OSTI]

Large lithium molybdate (Li$_2$MoO$_4$) crystal boules were produced by using the low thermal gradient Czochralski growth technique from deeply purified molybdenum. A small sample from one of the boules was preliminary characterized in terms of X-ray-induced and thermally-excited luminescence. A large cylindrical crystalline element (with a size of $\\oslash 40\\times40$ mm) was used to fabricate a scintillating bolometer, which was operated aboveground at $\\sim 15$ mK by using a pulse-tube cryostat housing a high-power dilution refrigerator. The excellent detector performance in terms of energy resolution and $\\alpha$ background suppression along with preliminary positive indications on the radiopurity of this material show the potentiality of Li$_2$MoO$_4$ scintillating bolometers for low-counting experiment to search for neutrinoless double beta decay of $^{100}$Mo.

Bekker, T B; Danevich, F A; Degoda, V Ya; Giuliani, A; Grigorieva, V D; Ivannikova, N V; Mancuso, M; de Marcillac, P; Moroz, I M; Nones, C; Olivieri, E; Pessina, G; Poda, D V; Shlegel, V N; Tretyak, V I; Velazquez, M

2014-01-01T23:59:59.000Z

364

First bolometric measurement of the two neutrino double beta decay of $^{100}$Mo with a ZnMoO$_4$ crystals array  

E-Print Network [OSTI]

The large statistics collected during the operation of a ZnMoO$_4$ array, for a total exposure of 1.3 kg $\\cdot$ day of $^{100}$Mo, allowed the first bolometric observation of the two neutrino double beta decay of $^{100}$Mo. The observed spectrum of each crystal was reconstructed taking into account the different background contributions due to environmental radioactivity and internal contamination. The analysis of coincidences between the crystals allowed the assignment of constraints to the intensity of the different background sources, resulting in a reconstruction of the measured spectrum down to an energy of $\\sim$300 keV. The half-life extracted from the data is T$_{1/2}^{2\

L. Cardani; L. Gironi; N. Ferreiro Iachellini; L. Pattavina; J. W. Beeman; F. Bellini; N. Casali; O. Cremonesi; I. Dafinei; S. Di Domizio; F. Ferroni; E. Galashov; C. Gotti; S. Nagorny; F. Orio; G. Pessina; G. Piperno; S. Pirro; E. Previtali; C. Rusconi; C. Tomei; M. Vignati

2014-04-30T23:59:59.000Z

365

Precipitation behavior of Ni-Cr-22 Fe-18 Mo (Hastelloy-X) and Ni-Cr-22 Co-12 Mo (Inconel-617) after isothermal aging  

SciTech Connect (OSTI)

The precipitation behavior of the nickel-base alloys Ni-Cr-22Fe-18Mo (Hastelloy-X) and Ni-Cr-22Co12Mo (Inconel-617) has been investigated as a function of aging temperature. Hastelloy-X shows that M/sub 6/C and TiN are primary precipitates and M/sub 12/C, A/sub 3/B/sub 2/ (approx. = Fe/sub 3/Mo/sub 2/), and M/sub 23/C/sub 6/ are secondary precipitates, while Inconel-617 also has M/sub 6/C and TiN as primary precipitates and M/sub 23/C/sub 6/, M/sub 12/C, and Ni/sub 3/AlTi as secondary precipitates. The characterization has been carried out by metallographic and transmission electron microscopy investigations and by x-ray examinations of electrochemical isolated precipitates.

Kirchhofer, H.; Nickel, H.; Schubert, F.

1984-07-01T23:59:59.000Z

366

Electrochemical Testing of Ni-Cr-Mo-Gd Alloys  

SciTech Connect (OSTI)

The waste package site recommendation design specified a boron-containing stainless steel, Neutronit 976/978, for fabrication of the internal baskets that will be used as a corrosion-resistant neutron-absorbing material. Recent corrosion test results gave higher-than-expected corrosion rates for this material. The material callout for these components has been changed to a Ni-Cr-Mo-Gd alloy (ASTM-B 932-04, UNS N06464) that is being developed at the Idaho National Laboratory. This report discusses the results of initial corrosion testing of this material in simulated in-package environments that could contact the fuel baskets after breach of the waste package outer barrier. The corrosion test matrix was executed using the potentiodynamic and potentiostatic electrochemical test techniques. The alloy performance shows low rates of general corrosion after initial removal of a gadolinium-rich second phase that intersects the surface. The high halide-containing test solutions exhibited greater tendencies toward initiation of crevice corrosion.

T. E. Lister; R. E. Mizia; H. Tian

2005-10-01T23:59:59.000Z

367

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents [OSTI]

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

368

Guidelines: Advance of Funds on Foreign Subcontracts Modified 12/10/10 In general, it is the University of Georgia's policy to deny advance payments to  

E-Print Network [OSTI]

for the University. However, in exceptional circumstances, it may be necessary to advance funds to subcontractors to ensure that all unspent funds are returned to the University of Georgia's Contracts and Grants DivisionGuidelines: Advance of Funds on Foreign Subcontracts Modified 12/10/10 Background In general

Arnold, Jonathan

369

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

and Environmental Sciences / Athens, Georgia 30602-4356 NOVEMBER 2006 COMMERCIAL EGG TIP . . . BIOFUELS AND POULTRY PRODUCTION The generation of biofuels using current technology (ethanol from the fermentation of corn gain. As the production of biofuels has become established public policy, it is not surprising

Navara, Kristen

370

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

of surface waters, and can lead to changes in species composition within land and water ecosystems. AmmoniaPUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S to the formation of acid rain, which can damage sensitive ecosystems. In areas where nitrogen is a limiting

Navara, Kristen

371

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

work force.. The University of Georgia Cooperative Extension Service College of Agricultural floor with a couple of rows of concrete blocks forming the base of the wall will help prevent rodents brings in oxygen while excess moisture, ammonia, heat and CO2 are removed as the air exits the house

Navara, Kristen

372

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

work force.. The University of Georgia Cooperative Extension Service College of Agricultural birds include depressed appetite, incoordination, leg weakness, dark skin lesions coupled with edema) Disinfectants and heat: When outbreaks occur, bacteria load can be reduced between flocks by removing old litter

Navara, Kristen

373

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

work force.. The University of Georgia Cooperative Extension Service College of Agricultural begins long before the birds enter the facility. Proper management of chickens in the field, coupled of food at night and not as much during the heat of the day, which throws off their feed withdrawal

Navara, Kristen

374

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

.S. Department of Agriculture and counties of the state cooperating. The Cooperative Extension service officers work force.. The University of Georgia Cooperative Extension Service College of Agricultural of electives to tailor their educational program to their specific needs. Students are encouraged to obtain

Navara, Kristen

375

Proceedings of the Sixteenth Annual Conference of the Cognitive Science Society, 1994. Atlanta, Georgia, August 13-16, 876-881.  

E-Print Network [OSTI]

, Georgia, August 13-16, 876-881. Simulated Perceptual Grouping: An Application to Human-Computer are explained. Keywords: Perceptual grouping, gestalt perception, multi-modal, simulation, human-computer. This paper describes a general computational model of perceptual grouping and discusses its use in human-computer

Thórisson, Kristinn Rúnar

376

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

educational programs, assistance and materials to all people without regard to race, color, national origin and Environmental Sciences / Athens, Georgia 30602-4356 NOVEMBER 2002 BROILER TIP . . . COST-SHARE ASSISTANCE CAN to ensure that adequate water will always be available, especially in hot weather. Having a backup source

Navara, Kristen

377

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

educational programs, assistance and materials to all people without regard to race, color, national origin FLOCK IN COLD WEATHER Because of the long, hot, humid summers we experience in Georgia, it is natural. By contrast, when winter weather is reasonably clear and dry, poultry feed is much more stable. However

Navara, Kristen

378

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

educational programs, assistance and materials to all people without regard to race, color, national origin and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2007 BROILER TIP . . . KEEPING BIRDS COOL IN HOT WEATHER. As warmer weather approaches, the threat of heat stress increases. Poultry producers need to anticipate

Navara, Kristen

379

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

educational programs, assistance and materials to all people without regard to race, color, national origin and Environmental Sciences / Athens, Georgia 30602-4356 MARCH 2007 BACKYARD FLOCK TIP . . . LIGHTING PROGRAMS. Much of this is Mother Nature's way of ensuring that the chicks would be reared in warmer weather

Navara, Kristen

380

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

in soils and risk of water contamination is complex. For nutrient management planning, a simple calculation Characteristics, Site Transport Characteristics, and Best Management Practices. Site Source Characteristics and Environmental Sciences / Athens, Georgia 30602-4356 JULY 2000 COMMERCIAL EGG TIP... THE PHOSPHOROUS INDEX

Navara, Kristen

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

selected based on importance of legal risk, potential cost, or environmental damage. In order to meet and Environmental Sciences / Athens, Georgia 30602-4356 JULY 2002 BROILER TIP . . . AGRICULTURAL ENVIRONMENTAL MANAGEMENT SYSTEMS In this age of expanding environmental scrutiny, management strategies that have

Navara, Kristen

382

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

383

E-Print Network 3.0 - aceros al cr-mo-v Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

G. F. Janssens, Dierk Raabe, Ernst Kozeschnik, Mark A. Miodownik, Summary: , ,,Dissimilar 2.25Cr-9Cr and 2Cr-0.5CrMoV steel welds, I. Characterisation of the weld zone and...

384

Growth and crystal structure of binary molybdate CsFe(MoO{sub 4}){sub 2}  

SciTech Connect (OSTI)

CsFe(MoO{sub 4}){sub 2} single crystals have been grown by solution-melt crystallization with a charge-to-solvent ratio of 1: 3 (with Cs{sub 2}Mo{sub 3}O{sub 10} used as a solvent). The crystal structure of this compound has been refined by X-ray diffraction (X8 APEX automatic diffractometer, MoK{sub {alpha}} radiation, 356 F(hkl), R = 0.0178). The trigonal unit cell has the following parameters: a = b = 5.6051(2) A, c = 8.0118(4) A, V = 217.985(15) A{sup 3}, Z = 1, {rho}{sub calc} = 3.875 g/cm{sup 3}, and sp. gr. P3-barm1. The structure is composed of alternating layers of FeO{sub 6} octahedra (with MoO{sub 4} tetrahedra attached by sharing vertices) and CsO{sub 12} icosahedra.

Bazarov, B. G., E-mail: jbaz@binm.bscnet.ru; Namsaraeva, T. V. [Russian Academy of Sciences, Baikal Institute of Nature Management, Siberian Branch (Russian Federation); Klevtsova, R. F., E-mail: klev@che.nsk.su; Anshits, A. G. [Russian Academy of Sciences, Institute of Inorganic Chemistry, Siberian Branch (Russian Federation); Vereshchagina, T. A. [Russian Academy of Sciences, Institute of Chemistry and Chemical Technology, Siberian Branch (Russian Federation); Glinskaya, L. A. [Russian Academy of Sciences, Institute of Inorganic Chemistry, Siberian Branch (Russian Federation); Fedorov, K. N.; Bazarova, Zh. G. [Russian Academy of Sciences, Baikal Institute of Nature Management, Siberian Branch (Russian Federation)

2010-07-15T23:59:59.000Z

385

Combining sedimentological, trace metal (Mn, Mo) and molecular evidence for reconstructing past water-column  

E-Print Network [OSTI]

Combining sedimentological, trace metal (Mn, Mo) and molecular evidence for reconstructing past online 22 June 2013 Abstract Here, we present sedimentological, trace metal, and molecular evidence underscores the value of combining sedimentological, geochemical, and microbiological approaches

Wehrli, Bernhard

386

Monolayers of MoS{sub 2} as an oxidation protective nanocoating material  

SciTech Connect (OSTI)

First-principle calculations are employed to investigate the interaction of oxygen with ideal and defective MoS{sub 2} monolayers. Our calculations show that while oxygen atoms are strongly bound on top of sulfur atoms, the oxygen molecule only weakly interacts with the surface. The penetration of oxygen atoms and molecules through a defect-free MoS{sub 2} monolayer is prevented by a very high diffusion barrier indicating that MoS{sub 2} can serve as a protective layer for oxidation. The analysis is extended to WS{sub 2} and similar coating characteristics are obtained. Our calculations indicate that ideal and continuous MoS{sub 2} and WS{sub 2} monolayers can improve the oxidation and corrosion-resistance of the covered surface and can be considered as an efficient nanocoating material.

Sen, H. Sener [UNAM-National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey); Sahin, H.; Peeters, F. M. [Department of Physics, University of Antwerp, 2610 Antwerp (Belgium); Durgun, E., E-mail: durgun@unam.bilkent.edu.tr [UNAM-National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey)

2014-08-28T23:59:59.000Z

387

Electronic structure and conductivity of nanocomposite metal (Au,Ag,Cu,Mo)-containing amorphous carbon films  

E-Print Network [OSTI]

dual-cathode arc deposition (PDC-FCVA) source containingand metal cathodes [2]. The PDC-FCVA system in combinationCu,Mo) incorporation in a-C by PDC-FCVA. The modification of

Endrino, Jose L.

2010-01-01T23:59:59.000Z

388

Atomistic simulation of the electronic states of adatoms in monolayer MoS{sub 2}  

SciTech Connect (OSTI)

Using an ab initio density functional theory based electronic structure method, we study the effects of adatoms on the electronic properties of monolayer transition metal dichalcogenide Molybdenum-disulfide (MoS{sub 2}). We consider the 1st (Li, Na, K) and 7th (F, Cl, Br) column atoms and metals (Sc, Ti, Ta, Mo, Pd, Pt, Ag, Au). Three high symmetry sites for the adatom on the surface of monolayer MoS{sub 2} are examined as starting points to search for the most energetically stable configuration for each adatom-monolayer MoS{sub 2} system, as well as the type of associated bonding. For the most stable adatom positions, we characterize the emergence of adatom-induced electronic states including any dopant states.

Chang, Jiwon; Larentis, Stefano; Tutuc, Emanuel; Register, Leonard F.; Banerjee, Sanjay K. [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

2014-04-07T23:59:59.000Z

389

AB INITIO Modeling of Thermomechanical Properties of Mo-Based Alloys for Fossil Energy Conversion  

SciTech Connect (OSTI)

In this final scientific/technical report covering the period of 3.5 years started on July 1, 2011, we report the accomplishments on the study of thermo-mechanical properties of Mo-based intermetallic compounds under NETL support. These include computational method development, physical properties investigation of Mo-based compounds and alloys. The main focus is on the mechanical and thermo mechanical properties at high temperature since these are the most crucial properties for their potential applications. In particular, recent development of applying ab initio molecular dynamic (AIMD) simulations to the T1 (Mo{sub 5}Si{sub 3}) and T2 (Mo{sub 5}SiB{sub 2}) phases are highlighted for alloy design in further improving their properties.

Ching, Wai-Yim

2013-12-31T23:59:59.000Z

390

Enhanced absorption of monolayer MoS{sub 2} with resonant back reflector  

SciTech Connect (OSTI)

The optical absorption of monolayer MoS{sub 2} on top of one-dimensional photonic crystal (1DPC) or metal films with spacer layers is theoretically investigated by extracting the permittivity of monolayer MoS{sub 2} from existing experimental results [K. F. Mak et al., Phys. Rev. Lett. 105, 136805 (2010)]. The absorption of graphene with 1DPC across a broad spectral range is substantially enhanced because of the photonic localization at the optical micro-cavity on top of the 1DPC or metal films. The absorption of monolayer MoS{sub 2} can be tuned by varying either the distance between the monolayer MoS{sub 2} and the back reflector or the thickness of the cover layers.

Liu, Jiang-Tao, E-mail: jtliu@semi.ac.cn; Liu, Nian-Hua [Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031 (China); Department of Physics, Nanchang University, Nanchang 330031 (China); Wang, Tong-Biao [Department of Physics, Nanchang University, Nanchang 330031 (China); Li, Xiao-Jing [College of Physics and Energy, Fujian Normal University, Fuzhou 350007 (China)

2014-05-21T23:59:59.000Z

391

Mo{sub 5}Si{sub 3} single crystals: Physical properties and mechanical behavior  

SciTech Connect (OSTI)

The materials processing, physical properties and mechanical behavior of an ultra-high temperature structural silicide, Mo{sub 5}Si{sub 3}, have been studied. High purity single crystals of Mo{sub 5}Si{sub 3} have been synthesized by both optical floating zone and Czochralski methods. The thermal and elastic properties of the MO{sub 5}Si{sub 3} single crystals were experimentally measured. Results show that Mo{sub 5}Si{sub 3} has significant thermal expansion anisotropy along the a and c directions with {alpha}{sub c}/{alpha}{sub a} = 2.2. Single crystal elastic moduli of Mo{sub 5}Si{sub 3} indicate that it has less elastic anisotropy and lower shear moduli than transition metal disilicides. Tensile stresses of up to 1.8 GPa can develop at grain boundaries after cooling from the melting point due to the thermal expansion mismatch in Mo{sub 5}Si{sub 3}, causing grain boundary cracking during processing of polycrystals. Room temperature Vickers indentation tests on (100) and (001) planes have been performed with different indenter diagonal orientations. The orientation dependence of hardness and fracture toughness of Mo{sub 5}Si{sub 3} single crystals have been obtained. The corresponding deformation and fracture modes have been revealed by microscopy studies. A comparison of Mo{sub 5}Si{sub 3} with other high temperature structural silicides, e.g., C11{sub b} and C40 transition metal disilicides, is discussed.

Chu, F.; Thoma, D.J.; McClellan, K.J.; Peralta, P.

1998-12-01T23:59:59.000Z

392

Description of coordinatively unsaturated sites regeneration over MoS2-based HDS catalysts using 35  

E-Print Network [OSTI]

envisaged. Moreover, on the sulfur edge the H2S release activation energy is too high (~ 13.5 kcal.mol-1 likely to occur on the MoS2 metallic edge through the departure of an H2S molecule. In the present paper, we aimed at examining the H2S departure from MoS2 catalysts promoted with Co and Ni. The [35 S

Boyer, Edmond

393

Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure  

SciTech Connect (OSTI)

Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

2014-03-21T23:59:59.000Z

394

Soft zone formation in dissimilar welds between two Cr-Mo steels  

SciTech Connect (OSTI)

Two dissimilar weldments between 9Cr-1Mo and 2.25Cr-1Mo ferritic steels have been characterized for their microstructural stability during various postweld heat treatments (PWHTs). The samples for the investigation were extracted from bead-on-plate weldments made by depositing 2.25Cr-1Mo weld metal on 9Cr-1Mo base plate and vice versa. Subsequent application of PWHT resulted in the formation of a soft zone in the low Cr ferritic steel weld or base plate. A carbide-rich hard zone, adjoining the soft zone, was also detected in the high Cr side of the weldment. Unmixed zones in the weld metal provided additional soft and hard zones in the weld metals. The migration of carbon from low-Cr steel to high-Cr steel, driven by the carbon activity gradient, has been shown to be responsible for the formation of soft and hard zones. A carbon activity diagram for 2.25Cr-1Mo/9Cr-1Mo weldments has been proposed to aid in the selection of welding consumables for reducing or preventing the soft zone formation.

Albert, S.K.; Gill, T.P.S.; Tyagi, A.K.; Mannan, S.L.; Rodriguez, P. [Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Kulkarni, S.D. [Indian Inst. of Tech., Bombay (India)

1997-03-01T23:59:59.000Z

395

Food and Drug Administration process validation activities to support 99Mo production at Sandia National Laboratories  

SciTech Connect (OSTI)

Prior to 1989 {sup 99}Mo was produced in the US by a single supplier, Cintichem Inc., Tuxedo, NY. Because of problems associated with operating its facility, in 1989 Cintichem elected to decommission the facility rather than incur the costs for repair. The demise of the {sup 99}Mo capability at Cintichem left the US totally reliant upon a single foreign source, Nordion International, located in Ottawa Canada. In 1992 the DOE purchased the Cintichem {sup 99}Mo Production Process and Drug Master File (DMF). In 1994 the DOE funded Sandia National Laboratories (SNL) to produce {sup 99}Mo. Although Cintichem produced {sup 99}Mo and {sup 99m}Tc generators for many years, there was no requirement for process validation which is now required by the Food and Drug Administration (FDA). In addition to the validation requirement, the requirements for current Good manufacturing Practices were codified into law. The purpose of this paper is to describe the process validation being conducted at SNL for the qualification of SNL as a supplier of {sup 99}Mo to US pharmaceutical companies.

McDonald, M.J.; Bourcier, S.C.; Talley, D.G.

1997-07-01T23:59:59.000Z

396

MoS{sub 2} nanotube exfoliation as new synthesis pathway to molybdenum blue  

SciTech Connect (OSTI)

Graphical abstract: . Display Omitted Highlights: ? New synthesis approach to obtaining molybdenum blue via exfoliated MoS{sub 2} nanotubes. ? Material is prone to self assembly and is stable in high vacuum. ? Molecules are as small as 2 nm and their clusters are up to tens of nanometers. ? Change in absorption and oxidation states from the precursor MoS{sub 2}. -- Abstract: Molybdenum blue-type materials are usually obtained by partially reducing Mo{sup VI+} in acidic solutions, while in the presented method it is formed in ethanol solution of exfoliated MoS{sub 2} nanotubes, where the MoS{sub 2} flakes are the preferential location for their growth. Material was investigated by means of scanning electron and atomic force microscopy, showing the structure and self assembly, while also confirming that it is stable in high vacuum with molecules as small as 1.6 nm and the agglomerates of few tens of nanometres. The ultraviolet–visible and photoelectron spectrometry show the change in absorption properties and oxidation states from MoS{sub 2} structure to molybdenum blue, while the presence of sulphur suggests that this is a new type of molybdenum blue material.

Visic, B., E-mail: bojana.visic@ijs.si [Jozef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana (Slovenia); Gunde, M. Klanjsek [National Institute of Chemistry, Hajdrihova 19, SI-1000 Ljubljana (Slovenia)] [National Institute of Chemistry, Hajdrihova 19, SI-1000 Ljubljana (Slovenia); Kovac, J.; Iskra, I. [Jozef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana (Slovenia)] [Jozef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana (Slovenia); Jelenc, J.; Remskar, M. [Jozef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana (Slovenia) [Jozef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana (Slovenia); Centre of Excellence Namaste, Jamova cesta 39, SI-1000 Ljubljana (Slovenia)

2013-02-15T23:59:59.000Z

397

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

398

Enriched Zn$^{100}$MoO$_4$ scintillating bolometers to search for $0 ? 2?$ decay of $^{100}$Mo with the LUMINEU experiment  

E-Print Network [OSTI]

The LUMINEU project aims at performing a demonstrator underground experiment searching for the neutrinoless double beta decay of the isotope $^{100}$Mo embedded in zinc molybdate (ZnMoO$_4$) scintillating bolometers. In this context, a zinc molybdate crystal boule enriched in $^{100}$Mo to 99.5\\% with a mass of 171 g was grown for the first time by the low-thermal-gradient Czochralski technique. The production cycle provided a high yield (the crystal boule mass was 84\\% of initial charge) and an acceptable level -- around 4\\% -- of irrecoverable losses of the costy enriched material. Two crystals of 59 g and 63 g, obtained from the enriched boule, were tested aboveground at milli-Kelvin temperature as scintillating bolometers. They showed a high detection performance, equivalent to that of previously developed natural ZnMoO$_4$ detectors. These results pave the way to future sensitive searches based on the LUMINEU technology, capable to approach and explore the inverted hierarchy region of the neutrino mass pattern.

A. S. Barabash; D. M. Chernyak; F. A. Danevich; A. Giuliani; I. M. Ivanov; E. P. Makarov; M. Mancuso; S. Marnieros; S. G. Nasonov; C. Nones; E. Olivieri; G. Pessina; D. V. Poda; V. N. Shlegel; M. Tenconi; V. I. Tretyak; Ya. V. Vasiliev; M. Velazquez; V. N. Zhdankov

2014-07-05T23:59:59.000Z

399

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells  

SciTech Connect (OSTI)

In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-01-07T23:59:59.000Z

400

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

402

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

403

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

404

Wavelength limits for InGaN quantum wells on GaN  

SciTech Connect (OSTI)

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

2013-06-17T23:59:59.000Z

405

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

1992-01-01T23:59:59.000Z

406

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

1992-08-01T23:59:59.000Z

407

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces  

SciTech Connect (OSTI)

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-08-12T23:59:59.000Z

408

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots  

SciTech Connect (OSTI)

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-15T23:59:59.000Z

409

AlGaAs/GaAs quantum well infrared detectors and modulators  

E-Print Network [OSTI]

to the quantum well. This optical transition wavelength lies in the mid infrared region of the spectrum. To get a more realistic picture of the optical transition in a 1-D quantum well, the non-parabolicity of the conduction band of GaAs is taken... into consideration. Further it is seen that with the change in temperature and doping concentration the width and peak of the absorption curve also changes. Based on the above calculations and results an AIGaAs/GaAs quantum well infrared photodetector...

Dave, Digant Praful

1990-01-01T23:59:59.000Z

410

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

411

Control of absorption of monolayer MoS$_{2}$ thin-film transistor in one-dimensional defective photonic crystal  

E-Print Network [OSTI]

The light absorption and transmission of monolayer MoS$_{2}$ in a one-dimensional defective photonic crystal (d-1DPC) is theoretically investigated. The study shows that the strong interference effect decreases photon density in particular areas of the microcavity. The d-1DPC can reduce light absorption of monolayer MoS$_{2}$ and enhance light transmission. The impact of monolayer MoS$_{2}$ light absorption on the localization effect of photon is investigated when monolayer MoS$_{2}$ and the organic light-emitting diode are located in the same microcavity. However, monolayer MoS$_{2}$ does not reduce the localization effect of light by regulating the position of monolayer MoS$_{2}$ in the microcavity.

Yang, Fang-Fang; Xiao, Wen-bo; Liu, Jiang-Tao; Liu, Nian-Hua

2014-01-01T23:59:59.000Z

412

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

413

Beta. -MoO sub 3 produced from a novel freeze drying route  

SciTech Connect (OSTI)

Powdered samples of {beta}-MoO{sub 3} have been produced by the gentle heat treatment of freeze-dried molybdic acid at 350{degree}C for 1 hr. The samples, yellow-green in appearance, contained varying amounts of the thermodynamically stable {alpha}-MoO{sub 3}, depending upon the time and temperature of heat treatment. Neutron diffraction data were collected at 300 K. all peaks, not attributable to {alpha}-MoO{sub 3}, were indexed on the basis of a monoclinic cell, P2{sub 1}/c, {alpha} = 7.1228(7), b = 5.3660(6), c = 5.5665(6), {beta} = 92.01(1){degree}, V = 212.62(6){angstrom}{sup 3}. The structure, which is related to ReO{sub 3}, contains two crystallographically independent octahedra. Both show evidence of disorder at the Mo and O sites. Two distinct orientations of a short mo-O distance, suggestive of the type of molybdenyl bond observed in both the {alpha} and {beta}{prime}-forms, are primarily responsible for the observed disordering.

Parise, J.B. (State Univ. of New York, Stony Brook (United States)); McCarron, E.M. III (E.I. Dupont de Nemours and Co., Inc., Wilmington, DE (United States)); Von Dreele, R.; Goldstone, J.A. (Los Alamos National Lab., NM (United States))

1991-07-01T23:59:59.000Z

414

Oxidation and creep behavior of Mo*5*Si*3* based materials  

SciTech Connect (OSTI)

Mo{sub 5}Si{sub 3} shows promise as a high temperature creep resistant material. The high temperature oxidation resistance of Mo{sub 5}Si{sub 3} has been found to be poor, however, limiting its use in oxidizing atmospheres. Undoped Mo{sub 5}Si{sub 3} exhibits mass loss in the temperature range 800{degrees}-1200{degrees}C due to volatilization of molybdenum oxide, indicating that the silica scale does not provide a passivating layer. The addition of boron results in protective scale formation and parabolic oxidation kinetics in the temperature range of 1050{degrees}-1300{degrees}C. The oxidation rate of Mo{sub 5}Si{sub 3} was decreased by 5 orders of magnitude at 1200{degrees}C by doping with less than two weight percent boron. Boron doping eliminates catastrophic {open_quote}pest{close_quote} oxidation at 800{degrees}C. The mechanism for improved oxidation resistance of boron doped Mo{sub 5}Si{sub 3} is due to scale modification by boron.

Meyer, M.

1995-06-19T23:59:59.000Z

415

TEM Characterization of High Burn-up Microstructure of U-7Mo Alloy  

SciTech Connect (OSTI)

As an essential part of global nuclear non-proliferation effort, the RERTR program is developing low enriched U-Mo fuels (< 20% U-235) for use in research and test reactors that currently employ highly enriched uranium fuels. One type of fuel being developed is a dispersion fuel plate comprised of U-7Mo particles dispersed in Al alloy matrix. Recent TEM characterizations of the ATR irradiated U-7Mo dispersion fuel plates include the samples with a local fission densities of 4.5, 5.2, 5.6 and 6.3 E+21 fissions/cm3 and irradiation temperatures of 101-136?C. The development of the irradiated microstructure of the U-7Mo fuel particles consists of fission gas bubble superlattice, large gas bubbles, solid fission product precipitates and their association to the large gas bubbles, grain subdivision to tens or hundreds of nanometer size, collapse of bubble superlattice, and amorphisation. This presentation will describe the observed microstructures specifically focusing on the U-7Mo fuel particles. The impact of the observed microstructure on the fuel performance and the comparison of the relevant features with that of the high burn-up UO2 fuels will be discussed.

Jian Gan; Brandon Miller; Dennis Keiser; Adam Robinson; James Madden; Pavel Medvedev; Daniel Wachs

2014-04-01T23:59:59.000Z

416

Elementary Steps of Syngas Reactions on Mo2C(001): Adsorption Thermochemistry and Bond Dissociation  

SciTech Connect (OSTI)

Density functional theory (DFT) and ab initio thermodynamics are applied in order to investigate the most stable surface and subsurface terminations of Mo{sub 2}C(001) as a function of chemical potential and in the presence of syngas. The Mo-terminated (001) surface is then used as a model surface to evaluate the thermochemistry and energetic barriers for key elementary steps in syngas reactions. Adsorption energy scaling relations and Broensted-Evans-Polanyi relationships are established and used to place Mo{sub 2}C into the context of transition metal surfaces. The results indicate that the surface termination is a complex function of reaction conditions and kinetics. It is predicted that the surface will be covered by either C{sub 2}H{sub 2} or O depending on conditions. Comparisons to transition metals indicate that the Mo-terminated Mo{sub 2}C(001) surface exhibits carbon reactivity similar to transition metals such as Ru and Ir, but is significantly more reactive towards oxygen.

Medford, Andrew

2012-02-16T23:59:59.000Z

417

Method for the production of {sup 99m}Tc compositions from {sup 99}Mo-containing materials  

DOE Patents [OSTI]

An improved method is described for producing {sup 99m}Tc compositions from {sup 99}Mo compounds. {sup 100}Mo metal or {sup 100}MoO{sub 3} is irradiated with photons in a particle (electron) accelerator to ultimately produce {sup 99}MoO{sub 3}. This composition is then heated in a reaction chamber to form a pool of molten {sup 99}MoO{sub 3} with an optimum depth of 0.5--5 mm. A gaseous mixture thereafter evolves from the molten {sup 99}MoO{sub 3} which contains vaporized {sup 99}MoO{sub 3}, vaporized {sup 99m}TcO{sub 3}, and vaporized {sup 99m}TcO{sub 2}. This mixture is then combined with an oxidizing gas (O{sub 2(g)}) to generate a gaseous stream containing vaporized {sup 99m}Tc{sub 2}O{sub 7} and vaporized {sup 99}MoO{sub 3}. Next, the gaseous stream is cooled in a primary condensation stage in the reaction chamber to remove vaporized {sup 99}MoO{sub 3}. Cooling is undertaken at a specially-controlled rate to achieve maximum separation efficiency. The gaseous stream is then cooled in a sequential secondary condensation stage to convert vaporized {sup 99m}Tc{sub 2}O{sub 7} into a condensed {sup 99m}Tc-containing reaction product which is collected. 1 fig.

Bennett, R.G.; Christian, J.D.; Grover, S.B.; Petti, D.A.; Terry, W.K.; Yoon, W.Y.

1998-09-01T23:59:59.000Z

418

Method for the production of .sup.99m Tc compositions from .sup.99 Mo-containing materials  

DOE Patents [OSTI]

An improved method for producing .sup.99m Tc compositions from .sup.99 Mo compounds. .sup.100 Mo metal or .sup.100 MoO.sub.3 is irradiated with photons in a particle (electron) accelerator to ultimately produce .sup.99 MoO.sub.3. This composition is then heated in a reaction chamber to form a pool of molten .sup.99 MoO.sub.3 with an optimum depth of 0.5-5 mm. A gaseous mixture thereafter evolves from the molten .sup.99 MoO.sub.3 which contains vaporized .sup.99 MoO.sub.3, vaporized .sup.99m TcO.sub.3, and vaporized .sup.99m TcO.sub.2. This mixture is then combined with an oxidizing gas (O.sub.2(g)) to generate a gaseous stream containing vaporized .sup.99m Tc.sub.2 O.sub.7 and vaporized .sup.99 MoO.sub.3. Next, the gaseous stream is cooled in a primary condensation stage in the reaction chamber to remove vaporized .sup.99 MoO.sub.3. Cooling is undertaken at a specially-controlled rate to achieve maximum separation efficiency. The gaseous stream is then cooled in a sequential secondary condensation stage to convert vaporized .sup.99m Tc.sub.2 O.sub.7 into a condensed .sup.99m Tc-containing reaction product which is collected.

Bennett, Ralph G. (Idaho Falls, ID); Christian, Jerry D. (Idaho Falls, ID); Grover, S. Blaine (Idaho Falls, ID); Petti, David A. (Idaho Falls, ID); Terry, William K. (Idaho Falls, ID); Yoon, Woo Y. (Idaho Falls, ID)

1998-01-01T23:59:59.000Z

419

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

420

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network [OSTI]

information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

Hyman, Bruce Carl

1999-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

General Atomics (GA) | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsorGeneral Atomics (GA)

422

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:

423

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

424

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat  

E-Print Network [OSTI]

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

Shepelyansky, Dima

425

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Broader source: Energy.gov (indexed) [DOE]

current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

426

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

427

Highly conducting SrMoO{sub 3} thin films for microwave applications  

SciTech Connect (OSTI)

We have measured the microwave resistance of highly conducting perovskite oxide SrMoO{sub 3} thin film coplanar waveguides. The epitaxial SrMoO{sub 3} thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3?nm. Layer-by-layer growth could be achieved for film thicknesses up to 400?nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29???·cm between 0.1 and 20?GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO{sub 3} is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.

Radetinac, Aldin, E-mail: aldin@oxide.tu-darmstadt.de; Mani, Arzhang; Ziegler, Jürgen; Alff, Lambert; Komissinskiy, Philipp, E-mail: komissinskiy@oxide.tu-darmstadt.de [Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany); Melnyk, Sergiy; Nikfalazar, Mohammad; Zheng, Yuliang; Jakoby, Rolf [Institute for Microwave Engineering and Photonics, TU Darmstadt, Merckstraße 25, 64283 Darmstadt (Germany)

2014-09-15T23:59:59.000Z

428

The development of uranium foil farication technology utilizing twin roll method for Mo-99 irradiation target  

E-Print Network [OSTI]

MDS Nordion in Canada, occupying about 75% of global supply of Mo-99 isotope, has provided the irradiation target of Mo-99 using the rod-type UAl sub x alloys with HEU(High Enrichment Uranium). ANL (Argonne National Laboratory) through co-operation with BATAN in Indonesia, leading RERTR (Reduced Enrichment for Research and Test Reactors) program substantially for nuclear non-proliferation, has designed and fabricated the annular cylinder of uranium targets, and successfully performed irradiation test, in order to develop the fabrication technology of fission Mo-99 using LEU(Low Enrichment Uranium). As the uranium foils could be fabricated in laboratory scale, not in commercialized scale by hot rolling method due to significant problems in foil quality, productivity and economic efficiency, attention has shifted to the development of new technology. Under these circumstances, the invention of uranium foil fabrication technology utilizing twin-roll casting method in KAERI is found to be able to fabricate LEU or...

Kim, C K; Park, H D

2002-01-01T23:59:59.000Z

429

Progress in chemical processing of LEU targets for {sup 99}Mo production -- 1997  

SciTech Connect (OSTI)

Presented here are recent experimental results of the continuing development activities associated with converting current processes for producing fission-product {sup 99}Mo from targets using high-enriched uranium (HEU) to low-enriched uranium (LEU). Studies were focused in four areas: (1) measuring the chemical behavior of iodine, rhodium, and silver in the LEU-modified Cintichem process, (2) performing experiments and calculations to assess the suitability of zinc fission barriers for LEU metal foil targets, (3) developing an actinide separations method for measuring alpha contamination of the purified {sup 99}Mo product, and (4) developing a cooperation with Sandia National Laboratories and Los Alamos National Laboratory that will lead to approval by the US Federal Drug Administration for production of {sup 99}Mo from LEU targets. Experimental results continue to show the technical feasibility of converting current HEU processes to LEU.

Vandegrift, G.F.; Conner, C.; Sedlet, J.; Wygmans, D.G. [Argonne National Lab., IL (United States); Wu, D. [Univ. of Illinois, Urbana, IL (United States); Iskander, F.; Landsberger, S. [Univ. of Texas, Austin, TX (United States)

1997-10-01T23:59:59.000Z

430

Atomistic full-band simulations of monolayer MoS{sub 2} transistors  

SciTech Connect (OSTI)

We study the transport properties of deeply scaled monolayer MoS{sub 2} n-channel metal-oxide-semiconductor field effect transistors (MOSFETs), using full-band ballistic quantum transport simulations, with an atomistic tight-binding Hamiltonian obtained from density functional theory. Our simulations suggest that monolayer MoS{sub 2} MOSFETs can provide near-ideal subthreshold slope, suppression of drain-induced barrier lowering, and gate-induced drain leakage. However, these full-band simulations exhibit limited transconductance. These ballistic simulations also exhibit negative differential resistance (NDR) in the output characteristics associated with the narrow width in energy of the lowest conduction band, but this NDR may be substantially reduced or eliminated by scattering in MoS{sub 2}.

Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K. [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)] [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

2013-11-25T23:59:59.000Z

431

Time exposure performance of Mo-Au Gibbsian segregating alloys for extreme ultraviolet collector optics  

SciTech Connect (OSTI)

Successful implementation of extreme ultraviolet (EUV) lithography depends on research and progress toward minimizing collector optics degradation from intense plasma erosion and debris deposition. Thus studying the surface degradation process and implementing innovative methods, which could enhance the surface chemistry causing the mirrors to suffer less damage, is crucial for this technology development. A Mo-Au Gibbsian segregation (GS) alloy is deposited on Si using a dc dual-magnetron cosputtering system and the damage is investigated as a result of time dependent exposure in an EUV source. A thin Au segregating layer is maintained through segregation during exposure, even though overall erosion in the Mo-Au sample is taking place in the bulk. The reflective material, Mo, underneath the segregating layer is protected by this sacrificial layer, which is lost due to preferential sputtering. In addition to theoretical work, experimental results are presented on the effectiveness of the GS alloys to be used as potential EUV collector optics material.

Qiu Huatan; Srivastava, Shailendra N.; Thompson, Keith C.; Neumann, Martin J.; Ruzic, David N

2008-05-01T23:59:59.000Z

432

DENSITY-FUNCTIONAL STUDY OF U-Mo AND U-Zr ALLOYS  

SciTech Connect (OSTI)

Density-functional theory previously used to describe phase equilibria in U-Zr alloys [A. Landa, P. Soederlind, P.E.A. Turchi, J. Alloys Comp. 478 (2009) 103-110] is extended to investigate the ground-state properties of U-Mo solid solutions. We discuss how the heat of formation in both alloys correlates with the charge transfer between the alloy components, and how the specific behavior of the density of states in the vicinity of the Fermi level promotes the stabilization of the U{sub 2}Mo compound. Our calculations prove that, due to the existence of a single {gamma}-phase over the typical fuel operation temperatures, {gamma}-U-Mo alloys should indeed have much lower constituent redistribution than {gamma}-U-Zr alloys for which binodal decomposition causes a high degree of constituent redistribution.

Landa, A; Soderlind, P; Turchi, P A

2010-11-01T23:59:59.000Z

433

The design, construction, and monitoring of photovoltaic power system and solar thermal system on the Georgia Institute of Technology Aquatic Center. Volume 1  

SciTech Connect (OSTI)

This is a report on the feasibility study, design, and construction of a PV and solar thermal system for the Georgia Tech Aquatic Center. The topics of the report include a discussion of site selection and system selection, funding, design alternatives, PV module selection, final design, and project costs. Included are appendices describing the solar thermal system, the SAC entrance canopy PV mockup, and the PV feasibility study.

Long, R.C.

1996-12-31T23:59:59.000Z

434

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

" FL Water Law Regulated Riparianism "Heavy" Admin Water Law ? #12;Comprehensive Water Resource Study Supply a. Water Allocation ­ Withdrawal Permit Program b. Water Storage & Delivery c. Interbasin TransferThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

435

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

436

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures  

E-Print Network [OSTI]

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

Luryi, Serge

437

Toughness of Cr-Mo-V steels for steam-turbine rotors  

SciTech Connect (OSTI)

Cr-Mo-V steels are used extensively as the rotor material in the High Pressure and Intermediate Pressure Sections of modern steam turbines. The toughness of these rotors has a major influence on the reliability and efficiency of the turbine and the overall economy of operation and maintenance of the plant. The metallurgical factors affecting the toughness of the rotors and the methods to improve the toughness are now understood better than ever before. This paper will present a broad overview of the materials and design aspects of the toughness of Cr-Mo-V rotors with emphasis on the salient results of recent research programs aimed at improving their toughness.

Viswanathan, R.; Jaffee, R.I.

1982-04-01T23:59:59.000Z

438

Mo-99 production at the Annular Core Research Reactor - recent calculative results  

SciTech Connect (OSTI)

Significant progress has been made over the past year in understanding the chemistry and processing challenges associated with {sup 99}Mo production using Cintichem type targets. Targets fabricated at Los Alamos National Laboratory have been successfully irradiated in fuel element locations at the Annular Core Research Reactor (ACRR) and processed at the Sandia Hot Cell Facility. The next goal for the project is to remove the central cavity experiment tube from the reactor core, allowing for the irradiation of up to 37 targets. After the in-core work is complete, the reactor will be capable of producing significant quantities of {sup 99}Mo.

Parma, E.J.

1997-11-01T23:59:59.000Z

439

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

440

Elastic properties of Pu metal and Pu-Ga alloys  

SciTech Connect (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

442

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach  

E-Print Network [OSTI]

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

Itoh, Tatsuo

443

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

444

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network [OSTI]

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

445

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

446

Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip  

E-Print Network [OSTI]

by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsÕAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving

Hohls, Frank

447

OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT  

E-Print Network [OSTI]

on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

Honsberg, Christiana

448

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

449

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

450

Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study  

E-Print Network [OSTI]

Diffusion of a Ga adatom on the GaAs(001)c(4×4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features

Khare, Sanjay V.

451

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields  

E-Print Network [OSTI]

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. © 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has

Demir, Hilmi Volkan

452

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a)  

E-Print Network [OSTI]

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a) M. Patrini,1 G; accepted 5 May 2011; published online 20 June 2011) The effect of hydrogen irradiation on the optical for fiber optic communications. These promising results in view of the development of waveguides deserve

453

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

454

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network [OSTI]

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

455

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers  

E-Print Network [OSTI]

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

Wetzel, Christian M.

456

Materials Science and Engineering A261 (1999) 4452 Mo5Si3 single crystals: physical properties and mechanical behavior  

E-Print Network [OSTI]

. Among these phases, refractory metal silicides appear to be more attractive because of their ultra-high melting temperatures [1]. Among the refractory metal silicides, the silicides in the Mo­Si system show processing, physical properties and mechanical behavior of an ultrahigh temperature structural silicide, Mo5

457

11/04/02 G. W. Rubloff AVS 2002 MS MoA5 1 Spatially Programmable Reactor Design  

E-Print Network [OSTI]

optimization is constrained by fixed reactor design manufacturing #12;11/04/02 G. W. Rubloff ­ AVS 2002 ­ MS Mo spatial conditions in programmable reactor Uniformity unacceptable Produce high uniformity with optimal11/04/02 G. W. Rubloff ­ AVS 2002 ­ MS MoA5 1 Spatially Programmable Reactor Design: Toward a New

Rubloff, Gary W.

458

Giant Two-Photon Absorption Coefficient and Frequency Up-Converted Luminescence in Monolayer MoS2  

E-Print Network [OSTI]

Strong two-photon absorption (TPA) in monolayer MoS2 is demonstrated in contrast to saturable absorption (SA) in multilayer MoS2 under the excitation of femtosecond laser pulses in the near infrared region. MoS2 in the forms of monolayer single crystal and multilayer triangular islands are grown on either quartz or SiO2/Si by employing the seeding method through chemistry vapor deposition. The nonlinear transmission measurements reveal that monolayer MoS2 possesses a giant nonsaturation TPA coefficient, larger than that of conventional semiconductors. As a result of TPA, two-photon pumped frequency up-converted luminescence is observed directly in the monolayer MoS2. For the multilayer MoS2, the SA response is demonstrated with the ratio of the excited-state absorption cross section to ground-state cross section of 0.18. In addition, the laser damage threshold of the monolayer MoS2 is 97 GW/cm2, larger than that of the multilayer MoS2 of 78 GW/cm2.

Li, Yuanxin; Zhang, Saifeng; Zhang, Xiaoyan; Feng, Yanyan; Wang, Kangpeng; Zhang, Long; Wang, Jun

2015-01-01T23:59:59.000Z

459

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings  

SciTech Connect (OSTI)

The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-28T23:59:59.000Z

460

Single photon emission from site-controlled InGaN/GaN quantum dots  

SciTech Connect (OSTI)

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2013-11-04T23:59:59.000Z

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

462

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

463

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

464

Processing and characterization of nanocrystalline molybdenum disilicide (MoSi{sub 2}) consolidated by hot isostatic pressing (HIP)  

SciTech Connect (OSTI)

This work studied the effect nanocrystalline processing may have on mechanical properties of MoSi{sub 2} and the ease with which MoSi{sub 2} powder can be processed into a bulk shape. (MoSi{sub 2} presently is limited by poor strength above 1000 C and brittleness below DBTT.) This work studied cold and hot isostatic pressing (CIP, HIP). The attrited, CIPed, and HIPed samples were characterized by chemical analysis, XRD, SEM, microhardness, optical microscopy, and quantitative metallography (porosity, density). Fracture toughness of the nanocrystalline MoSi{sub 2} was found to be a factor of two higher than conventional MoSi{sub 2} and the hardness of 1500 C-HIPed compacts were higher, as well. Modulus test showed the calculated elastic constants to be higher than the original Cerac material.

Haji-Mahmood, M.S.

1995-02-10T23:59:59.000Z

465

Single-layer MoS{sub 2} roughness and sliding friction quenching by interaction with atomically flat substrates  

SciTech Connect (OSTI)

We experimentally study the surface roughness and the lateral friction force in single-layer MoS{sub 2} crystals deposited on different substrates: SiO{sub 2}, mica, and hexagonal boron nitride (h-BN). Roughness and sliding friction measurements are performed by atomic force microscopy. We find a strong dependence of the MoS{sub 2} roughness on the underlying substrate material, being h-BN the substrate which better preserves the flatness of the MoS{sub 2} crystal. The lateral friction also lowers as the roughness decreases, and attains its lowest value for MoS{sub 2} flakes on h-BN substrates. However, it is still higher than for the surface of a bulk MoS{sub 2} crystal, which we attribute to the deformation of the flake due to competing tip-to-flake and flake-to-substrate interactions.

Quereda, J. [Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid E-28049 (Spain); Castellanos-Gomez, A. [Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft (Netherlands); Agraït, N. [Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid E-28049 (Spain); Instituto Madrileño de Estudios Avanzados en Nanociencia, IMDEA-Nanociencia, E-28049 Madrid (Spain); Instituto de Ciencia de Materiales Nicolás Cabrera, Campus de Cantoblanco, E-28049 Madrid (Spain); Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Rubio-Bollinger, G., E-mail: gabino.rubio@uam.es [Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid E-28049 (Spain); Instituto de Ciencia de Materiales Nicolás Cabrera, Campus de Cantoblanco, E-28049 Madrid (Spain); Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

2014-08-04T23:59:59.000Z

466

High blue-near ultraviolet photodiode response of vertically stacked graphene-MoS{sub 2}-metal heterostructures  

SciTech Connect (OSTI)

We present a study on the photodiode response of vertically stacked graphene/MoS{sub 2}/metal heterostructures in which MoS{sub 2} layers are doped with various plasma species. In comparison with undoped heterostructures, such doped ones exhibit significantly improved quantum efficiencies in both photovoltaic and photoconductive modes. This indicates that plasma-doping-induced built-in potentials play an important role in photocurrent generation. As compared to indium-tin-oxide/ MoS{sub 2}/metal structures, the presented graphene/MoS{sub 2}/metal heterostructures exhibit greatly enhanced quantum efficiencies in the blue-near ultraviolet region, which is attributed to the low density of recombination centers at graphene/MoS{sub 2} heterojunctions. This work advances the knowledge for making photo-response devices based on layered materials.

Wi, Sungjin; Chen, Mikai; Nam, Hongsuk; Liu, Amy C.; Meyhofer, Edgar; Liang, Xiaogan, E-mail: xiaoganl@umich.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-06-09T23:59:59.000Z

467

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well  

SciTech Connect (OSTI)

The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.

Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

2010-06-15T23:59:59.000Z

468

Low Cost Inkjet-printing Paper-Based Modules for RFID Sensing and Wireless Applications  

E-Print Network [OSTI]

of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USA 1 arida

Tentzeris, Manos

469

1080 IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, VOL. 9, 2010 Integrated Wideband 2-D and 3-D Transitions  

E-Print Network [OSTI]

are with the Electrical Engineering Department, Georgia Institute of Technology, Atlanta, GA 30332 USA (e-mail: arida

Tentzeris, Manos

470

Choice Based Revenue Management for Parallel Flights  

E-Print Network [OSTI]

Mar 6, 2014 ... We formulate corresponding deterministic (fluid) optimization ... and Systems Engineering, Georgia Institute of Technology, Atlanta, GA ...

Jim Dai

2014-03-06T23:59:59.000Z

471

Incremental Development for Automotive Software in AutoMoDe Andreas Bauer1  

E-Print Network [OSTI]

Incremental Development for Automotive Software in AutoMoDe Andreas Bauer1 Jan Romberg1 Bernhard Validas AG 3 ETAS GmbH 4 PMSF IT Consulting 5 Robert Bosch GmbH Abstract Automotive software development. To facilitate the design and evolution of heterogeneous automotive software, suitable views for each level

Braun, Peter

472

Standards as InterdependentArtifacts: the Case of the Internet Mo-Han Hsieh  

E-Print Network [OSTI]

Standards as InterdependentArtifacts: the Case of the Internet by Mo-Han Hsieh B.S. Civil Systems Chair, Engineer ystems Division Education Committee #12;1 #12;Standards as Interdependent in Engineering Systems ABSTRACT This thesis has explored a new idea: viewing standards as interdependent

de Weck, Olivier L.

473

Synthesis Gas Conversion to Aliphatic Alcohols: Study of MoS2 catalytic systems  

E-Print Network [OSTI]

by sulfidation of ammonium thiomolybate and acetate salts of co-promoters. Several catalyst formulations were prepared by calcination, followed by doping with alkali promoters. Solid state modifications were made in some cases to dilute the active MoS2 material...

Baksh, Faisal

2010-04-19T23:59:59.000Z

474

Investigation of Double Beta Decay of 100Mo to Excited States of 100Ru  

SciTech Connect (OSTI)

Double beta decay of 100Mo to the excited states of daughter nuclei has been studied using a 600 cm3 low-background HPGe detector and an external source consisting of 2588 g of 97.5% enriched metallic 100Mo, which was formerly inside the NEMO-3 detector and used for the NEMO-3 measurements of 100Mo. The half-life for the two-neutrino double beta decay of 100Mo to the excited View the MathML source state in 100Ru is measured to be T1/2=[7.5±0.6(stat)±0.6(syst)]·1020 yr. For other (0?+2?) transitions to the View the MathML source, View the MathML source, View the MathML source, View the MathML source and View the MathML source levels in 100Ru, limits are obtained at the level of ~(0.25–1.1)·1022 yr.

A. J. Caffrey; The NEMO-3 Collaboration

2014-05-01T23:59:59.000Z

475

Spectroscopy of low energy solar neutrinos by MOON -Mo Observatory Of Neutrinos-  

E-Print Network [OSTI]

Spectroscopy of low energy solar neutrinos by MOON -Mo Observatory Of Neutrinos- R. Hazamaa , P Be solar 's. The present status of MOON for the low energy solar experiment is briefly discussed the pp solar flux with good accuracy. 1. INTRODUCTION Realtime studies of the high-energy component of 8

Washington at Seattle, University of

476

Statistical Mechanics, CHEM 6481, Fall MWF 10:05-10:55am, MoSE 1224  

E-Print Network [OSTI]

Statistical Mechanics, CHEM 6481, Fall MWF 10:05-10:55am, MoSE 1224 Course website: T" are considered background material. Required Text: "Introduction to Modern Statistical Mechanics," David Chandler (Oxford, New York, 1982) Recommended Text: "Statistical Mechanics," Donald McQuarrie (HarperCollins, New

Sherrill, David

477

Rejection of randomly coinciding events in ZnMoO$_4$ scintillating bolometers  

E-Print Network [OSTI]

Random coincidence of events (particularly from two neutrino double beta decay) could be one of the main sources of background in the search for neutrinoless double beta decay with cryogenic bolometers due to their poor time resolution. Pulse-shape discrimination by using front edge analysis, mean-time and $\\chi^2$ methods was applied to discriminate randomly coinciding events in ZnMoO$_4$ cryogenic scintillating bolometers. These events can be effectively rejected at the level of 99% by the analysis of the heat signals with rise-time of about 14 ms and signal-to-noise ratio of 900, and at the level of 92% by the analysis of the light signals with rise-time of about 3 ms and signal-to-noise ratio of 30, under the requirement to detect 95% of single events. These rejection efficiencies are compatible with extremely low background levels in the region of interest of neutrinoless double beta decay of $^{100}$Mo for enriched ZnMoO$_4$ detectors, of the order of $10^{-4}$ counts/(y keV kg). Pulse-shape parameters have been chosen on the basis of the performance of a real massive ZnMoO$_4$ scintillating bolometer. Importance of the signal-to-noise ratio, correct finding of the signal start and choice of an appropriate sampling frequency are discussed.

D. M. Chernyak; F. A. Danevich; A. Giuliani; M. Mancuso; C. Nones; E. Olivieri; M. Tenconi; V. I. Tretyak

2014-04-04T23:59:59.000Z

478

TURBO EQUALIZATIONWITH AN UNKNOWN CHANNEL SeongwookSong', Andrew C. Singer2,Koeng-MoSun?  

E-Print Network [OSTI]

TURBO EQUALIZATIONWITH AN UNKNOWN CHANNEL SeongwookSong', Andrew C. Singer2,Koeng-MoSun? l t 2Univ the method of turbo equalization originally de- veloped by Douillard, et al. [3]. In its original form, turbo and without training data. The resultingjoint channeland data estimator is shown to outperform standard turbo

Singer, Andrew C

479

On the Higher-Order MoM-PO Electromagnetic Modeling of Vehicles  

E-Print Network [OSTI]

vehicles (cars, airplanes, helicopters, spacecraft, etc.). From the electromagnetic point of view and accurate higher-order, large-domain hybrid computational technique based on the method of moments (Mo the efficiency and accuracy of the hybrid higher-order computational technique and its advantages over

Notaros, Branislav M.

480

ZnMoO4: a promising bolometer for neutrinoless double beta decay searches  

E-Print Network [OSTI]

We investigate the performances of two ZnMoO4 scintillating crystals operated as bolometers, in view of a next generation experiment to search the neutrinoless double beta decay of Mo-100. We present the results of the alpha vs beta/gamma discrimination, obtained through the scintillation light as well as through the study of the shape of the thermal signal alone. The discrimination capability obtained at the 2615 keV line of Tl-208 is 8 sigma, using the heat-light scatter plot, while it exceeds 20 sigma using the shape of the thermal pulse alone. The achieved FWHM energy resolution ranges from 2.4 keV (at 238 keV) to 5.7 keV (at 2615 keV). The internal radioactive contaminations of the ZnMoO4 crystals were evaluated through a 407 hours background measurement. The obtained limit is < 32 microBq/kg for Th-228 and Ra-226. These values were used for a Monte Carlo simulation aimed at evaluating the achievable background level of a possible, future array of enriched ZnMoO4 crystals.

J. W. Beeman; F. Bellini; S. Capelli; L. Cardani; N. Casali; I. Dafinei; S. Di Domizio; F. Ferroni; E. N. Galashov; L. Gironi; F. Orio; L. Pattavina; G. Pessina; G. Piperno; S. Pirro; V. N. Shlegel; Ya. V. Vasilyev; C. Tomei; M. Vignati

2012-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "mo georgia ga" from the National Library of EnergyBeta (NLEBeta).
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481

EIS-0475: Disposition of the Bannister Federal Complex, Kansas City, MO  

Broader source: Energy.gov [DOE]

NNSA/DOE announces its intent to prepare an EIS for the disposition of the Bannister Federal Complex, Kansas City, MO. NNSA previously decided in a separate NEPA review (EA-1592) to relocate its operations from the Bannister Federal Complex to a newly constructed industrial campus eight miles from the current location.

482

TheElectronMicroscopyCore(EMC) UniversityofMissouriColumbia,MO65211  

E-Print Network [OSTI]

TheElectronMicroscopyCore(EMC) UniversityofMissouriColumbia,MO65211 The. The EMC houses two field emission SEM's, a Hitachi cold-field SEM (S-4700) and a FEI thermal FE SEM imaging and chemical analysis from their SEM/EDS systems. AdditionalSupportby: FormoreInformationortoregistergoto:http://www.emc

Noble, James S.

483

Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,,  

E-Print Network [OSTI]

Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,, Xingtian Yin,,,§, Maxwell, University of California, Berkeley, California 94720, United States Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States § Electronic Materials Research

Javey, Ali

484

This is MoFo. Scientific/Technical Patent Analysts/Agents  

E-Print Network [OSTI]

This is MoFo. Scientific/Technical Patent Analysts/Agents (Los Angeles, CA; McLean, VA; Palo Alto level patent analysts/agents for our Los Angeles, Palo Alto, San Diego and San Francisco offices of business strategies. Patent analysts/agents participate in domestic and foreign patent prosecution

Straight, Aaron

485

2008 IEEE Swarm Intelligence Symposium St. Louis MO USA, September 21-23, 2008  

E-Print Network [OSTI]

2008 IEEE Swarm Intelligence Symposium St. Louis MO USA, September 21-23, 2008 Roach Infestation of the PSO algorithm, entitled Roach Infestation Optimization (RIO), that is inspired by recent discoveries discoveries in the behavior of cockroaches are the inspiration for our proposed algorithm, Roach Infestation

Havens, Timothy

486

Microstructural Analysis of Irradiated U-Mo Fuel Plates: Recent Results  

SciTech Connect (OSTI)

Microstructural characterization of irradiated dispersion and monolithic RERTR fuel plates using scanning electron microscopy (SEM) is being performed in the Electron Microscopy Laboratory at the Idaho National Laboratory. The SEM analysis of samples from U-Mo dispersion fuel plates focuses primarily on the behavior of the Si that has been added to the Al matrix to improve the irradiation performance of the fuel plate and on the overall behavior of fission gases (e.g., Xe and Kr) that develop as bubbles in the fuel microstructure. For monolithic fuel plates, microstructural features of interest, include those found in the U-Mo foil and at the U-Mo/Zr and Zr/6061 Al cladding interfaces. For both dispersion and monolithic fuel plates, samples have been produced using an SEM equipped with a Focused Ion Beam (FIB). These samples are of very high quality and can be used to uncover some very unique microstructural features that are typically not observed when characterizing samples produced using more conventional techniques. Overall, for the dispersion fuel plates with matrices that contained Si, narrower fuel/matrix interaction layers are typically observed compared to the fuel plates with pure Al matrix, and for the monolithic fuel plates microstructural features have been observed in the U-10Mo foil that are similar to what have been observed in the fuel particles found in U-Mo dispersion fuels. Most recently, more prototypic monolithic fuel samples have been characterized and this paper describes the microstructures that have been observed in these samples.

D. D. Keiser, Jr.; J. Jue; B. D. Miller; J. Gan; A. B. Robinson; P. V. Medvedev

2012-03-01T23:59:59.000Z

487

Novel Processing of mo-si-b Intermetallics for improved efficiency of power systems  

SciTech Connect (OSTI)

Multiphase composite alloys based on the Mo-Si-B system are candidate materials for ultra-high temperature applications. In non load-bearing applications such as thermal barrier coatings or heat exchangers in fossil fuel burners, these materials may be ideally suited. Alloys based on the Mo{sub 5}Si{sub 3}B{sub x} phase (Tl phase) possess excellent oxidation resistance to at least 1600 C in synthetic air atmospheres. However, the ability of Tl-based alloys to resist aggressive combustion environments has not yet been determined. The present work seeks to investigate the resistance of these Mo-Si-B alloys to simulated combustion atmospheres. Material was pre-alloyed by combustion synthesis, and samples for testing were prepared by classic powder metallurgical processing techniques. Precursor material synthesized by self-heating-synthesis was sintered to densities exceeding 98% in an argon atmosphere at 1800 C. The approximate phase assemblage of the material was 57% Tl, 29% MoB, 14% MoSi{sub 2} (wt%). The alloy was oxidized from 1000-1100 C in flowing air containing water vapor at 18 Torr. At 1000 C the material achieved a steady state mass loss, and at 1100 C the material undergoes a steady state mass gain. The oxidation rate of these alloys in this temperature regime was accelerated by the presence of water vapor compared to oxidation in dry air. The results of microstructural analysis of the tested alloys will be discussed. Techniques and preliminary results for fabricating near-net-shaped parts will also be presented.

M.J. Kramer; O. Degirmen; A.J. Thom; M. Akinc

2004-09-30T23:59:59.000Z

488

Modeling of Interaction Layer Growth Between U-Mo Particles and an Al Matrix  

SciTech Connect (OSTI)

Interaction layer growth between U-Mo alloy fuel particles and Al in a dispersion fuel is a concern due to the volume expansion and other unfavorable irradiation behavior of the interaction product. To reduce interaction layer (IL) growth, a small amount of Si is added to the Al. As a result, IL growth is affected by the Si content in the Al matrix. In order to predict IL growth during fabrication and irradiation, empirical models were developed. For IL growth prediction during fabrication and any follow-on heating process before irradiation, out-of-pile heating test data were used to develop kinetic correlations. Two out-of-pile correlations, one for the pure Al matrix and the other for the Al matrix with Si addition, respectively, were developed, which are Arrhenius equations that include temperature and time. For IL growth predictions during irradiation, the out-of-pile correlations were modified to include a fission-rate term to consider fission enhanced diffusion, and multiplication factors to incorporate the Si addition effect and the effect of the Mo content. The in-pile correlation is applicable for a pure Al matrix and an Al matrix with the Si content up to 8 wt%, for fuel temperatures up to 200 degrees C, and for Mo content in the range of 6 – 10wt%. In order to cover these ranges, in-pile data were included in modeling from various tests, such as the US RERTR-4, -5, -6, -7 and -9 tests and Korea’s KOMO-4 test, that were designed to systematically examine the effects of the fission rate, temperature, Si content in Al matrix, and Mo content in U-Mo particles. A model converting the IL thickness to the IL volume fraction in the meat was also developed.

Yeon Soo Kim; G. L. Hofman; Ho Jin Ryu; Jong Man Park; A. B. Robinson; D. M. Wachs

2013-12-01T23:59:59.000Z

489

The center for plant and microbial complex carbohydrates at the University of Georgia Complex Carbohydrate Research Center  

SciTech Connect (OSTI)

Research from the Complex Carbohydrates Research Center at the University of Georgia is presented. Topics include: Structural determination of soybean isoflavones which specifically induce Bradyrhizobium japonicum nodD1 but not the nodYABCSUIJ operon; structural analysis of the lipopolysaccharides (LPSs) from symbiotic mutants of Bradyrhizobium japonicum; structural characterization of lipooligosaccharides from Bradyrhizobium japonicum that are required for the specific nodulation of soybean; structural characterization of the LPSs from R. Leguminosarum biovar phaseoli, the symbiont of bean; characterization of bacteroid-specific LPS epitopes in R. leguminosarum biovar viciae; analysis of the surface polysaccharides of Rhizobium meliloti mutants whose lipopolysaccharides and extracellular polysaccharides can have the same function in symbiosis; characterization of a polysaccharide produced by certain Bradyrhizobium japonicum strains within soybean nodules; structural analysis of a streptococcal adhesin polysaccharide receptor; conformational studies of xyloglucan, the role of the fucosylated side chain in surface-specific cellulose-xyloglucan interactions; the structure of an acylated glucosamine oligosaccharide signal molecule (nod factor) involved in the symbiosis of Rhizobium leguminosarum biovar viciae with its host Vicia sativa; investigating membrane responses induced by oligogalacturonides in cultured cells; the polygalacturonase inhibitor protein; characterization of the self-incompatability glycoproteins from Petunia hybrida; investigation of the cell wall polysaccharide structures of Arabidopsis thaliana; and the glucan inhibition of virus infection of tabacco.

Albersheim, P.; Darvill, A.

1991-08-01T23:59:59.000Z

490

Field dependent emission rates in radiation damaged GaAs  

SciTech Connect (OSTI)

We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

2014-07-07T23:59:59.000Z

491

First-principles study of the interfacial adhesion between SiO2 and MoSi2 D. E. Jiang1 and Emily A. Carter2  

E-Print Network [OSTI]

the energy efficiency and per- formance of gas turbine engines requires structural materials able to operate on MoSi2, a potential high-temperature coating material for metals. This silica scale protects MoSi2 the potential of MoSi2 as a high-temperature structural material and coating. DOI: 10.1103/PhysRevB.72

Carter, Emily A.

492

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

SciTech Connect (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

493

Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint  

SciTech Connect (OSTI)

We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 ?m to a modest 0.50 ?m over an underlying 0.10-?m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 ?m/3 ?m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-07-01T23:59:59.000Z

494

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

495

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs  

SciTech Connect (OSTI)

The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

2013-11-15T23:59:59.000Z

496

Electrical spin injection using GaCrN in a GaN based spin light emitting diode  

SciTech Connect (OSTI)

We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2013-12-09T23:59:59.000Z

497

MoS{sub 2}@ZnO nano-heterojunctions with enhanced photocatalysis and field emission properties  

SciTech Connect (OSTI)

The molybdenum disulfide (MoS{sub 2})@ZnO nano-heterojunctions were successfully fabricated through a facile three-step synthetic process: prefabrication of the ZnO nanoparticles, the synthesis of MoS{sub 2} nanoflowers, and the fabrication of MoS{sub 2}@ZnO heterojunctions, in which ZnO nanoparticles were uniformly self-assembled on the MoS{sub 2} nanoflowers by utilizing polyethyleneimine as a binding agent. The photocatalytic activities of the composite samples were evaluated by monitoring the photodegradation of methylene blue (MB). Compared with pure MoS{sub 2} nanoflowers, the composites show higher adsorption capability in dark and better photocatalytic efficiency due to the increased specific surface area and improved electron-hole pair separation. After irradiation for 100?min, the remaining MB in solution is about 7.3%. Moreover, the MoS{sub 2}@ZnO heterojunctions possess enhanced field emission properties with lower turn-on field of 3.08?V ?m{sup ?1}and lower threshold field of 6.9?V ?m{sup ?1} relative to pure MoS{sub 2} with turn-on field of 3.65?V ?m{sup ?1} and threshold field of 9.03?V ?m{sup ?1}.

Tan, Ying-Hua; Yu, Ke, E-mail: yk5188@263.net; Li, Jin-Zhu; Fu, Hao; Zhu, Zi-Qiang [Key Laboratory of Polar Materials and Devices (Ministry of Education of China), Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China)

2014-08-14T23:59:59.000Z

498

Beta-decay branching ratios of 62Ga  

E-Print Network [OSTI]

Beta-decay branching ratios of 62Ga have been measured at the IGISOL facility of the Accelerator Laboratory of the University of Jyvaskyla. 62Ga is one of the heavier Tz = 0, 0+ -> 0+ beta-emitting nuclides used to determine the vector coupling constant of the weak interaction and the Vud quark-mixing matrix element. For part of the experimental studies presented here, the JYFLTRAP facility has been employed to prepare isotopically pure beams of 62Ga. The branching ratio obtained, BR= 99.893(24)%, for the super-allowed branch is in agreement with previous measurements and allows to determine the ft value and the universal Ft value for the super-allowed beta decay of 62Ga.

A. Bey; B. Blank; G. Canchel; C. Dossat; J. Giovinazzo; I. Matea; V. Elomaa; T. Eronen; U. Hager; M. Hakala; A. Jokinen; A. Kankainen; I. Moore; H. Penttila; S. Rinta-Antila; A. Saastamoinen; T. Sonoda; J. Aysto; N. Adimi; G. De France; J. C. Thomas; G. Voltolini; T. Chaventré

2008-04-17T23:59:59.000Z

499

Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot  

SciTech Connect (OSTI)

In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

Emre Kavruk, Ahmet, E-mail: aekavruk@selcuk.edu.tr, E-mail: aekavruk@gmail.com; Koc, Fatih [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Sciences and Nanotechnology Engineering, Abdullah Gul University, Kayseri (Turkey)

2013-11-14T23:59:59.000Z

500

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z