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Sample records for mo georgia ga

  1. Georgia - Compare - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia Georgia

  2. Georgia - Rankings - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia Georgia

  3. Georgia - Search - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia Georgia

  4. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; et al

    2016-04-01

    Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between themore » two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

  5. Dalton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Georgia: Energy Resources (Redirected from Dalton, GA) Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.7698021, -84.9702228 Show Map Loading map......

  6. Workplace Charging Challenge Partner: Georgia Institute of Technology...

    Energy Savers [EERE]

    Workplace Charging Challenge Partner: Georgia Institute of Technology Joined the Challenge: February 2014 Headquarters: Atlanta, GA Charging Location: Atlanta, GA Domestic ...

  7. ,"Georgia Natural Gas Industrial Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    586-8800",,,"1292016 12:15:32 AM" "Back to Contents","Data 1: Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)" "Sourcekey","N3035GA3" "Date","Georgia...

  8. Newton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    in Newton County, Georgia Covington, Georgia Mansfield, Georgia Newborn, Georgia Oxford, Georgia Porterdale, Georgia Social Circle, Georgia Retrieved from "http:...

  9. Georgia and Arkansas Residential Energy Code Field Studies |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia and Arkansas Residential Energy Code Field Studies Lead Performer: Southeast Energy Efficiency Alliance - Atlanta, GA Partners: - Advanced Energy - Raleigh, NC - Arkansas ...

  10. Chatham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Georgia Bloomingdale, Georgia Garden City, Georgia Georgetown, Georgia Isle of Hope, Georgia Montgomery, Georgia Pooler, Georgia Port Wentworth, Georgia Savannah, Georgia...

  11. Ga-67 vs In-111-DTPA-anti-p97 monoclonal antibody (MoAb) for scintigraphic detection of metastatic melanoma

    SciTech Connect (OSTI)

    Neumann, R.D.; Kirkwood, J.M.; Zoghbi, S.S.; Ernstoff, M.S.; Cornelius, E.A.; Hoffer, P.B.; Gottschalk, A.

    1985-05-01

    The authors have initiated a prospective comparative evaluation of tomographic (Pho/Con) Ga-67 (10 mCi) scintigraphy versus computerized gamma camera radioimmunoscintigraphy using anti-p97 murine MoAb (5 mCi In-111-DTPA conjugated to 1 mg MoAb + 19 mgs ''cold'' MoAb) for detection of metastatic melanoma. To date 9 patients have had both a Ga-67 scan and an anti-p97 MoAb study within a 1 month interval. The 9 patients had 45 known sites of disease greater than 1 cm minimum diameter, located in skin, soft tissue, and/or viscea. In-111-anti-p97 scans were done 72 hrs after i.v. administration of the radiolabeled MoAb mixed together with the ''cold'' carrier MoAb. Ga-67 scans were done 48-72 hrs after injection. MoAb scans detected 30/45 known sites (sensitivity=67%) while the Ga-67 scans found 29/45 of these known sites (sensitivity=64%). Heterogeneity of metastases was evident with the detection of partly overlapping subsets of metastases by the two techniques, i.e. some mets were localized with both techniques while other mets were detected by only one of the two methods. Combined detection with both techniques improved sensitivity from 64-67% to 91%. These preliminary data suggest: 1) comparable sensitivities for Ga-67 and In-111-DTPA anti-p97 scans, 2) heterogeneity of metastases with regard to the localization of these two agents, and 3) improved sensitivity by combining both techniques.

  12. Liberty County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    A. Places in Liberty County, Georgia Allenhurst, Georgia Flemington, Georgia Fort Stewart, Georgia Gumbranch, Georgia Hinesville, Georgia Midway, Georgia Riceboro, Georgia...

  13. The Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

    SciTech Connect (OSTI)

    Jones, K. M.; Al-Jassim, M. M.; Hasoon, F. S.; Venkatasubramanian, R.

    1999-04-26

    The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4{micro}m range, while the deposition temperature was in the 650-825 C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions.

  14. Walton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Walton County, Georgia Between, Georgia Good Hope, Georgia Jersey, Georgia Loganville, Georgia Monroe, Georgia Social Circle, Georgia...

  15. Madison County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Madison County, Georgia Carlton, Georgia Colbert, Georgia Comer, Georgia Danielsville, Georgia Hull, Georgia Ila, Georgia Royston,...

  16. Gwinnett County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    BJ Gas Recovery Biomass Facility Places in Gwinnett County, Georgia Auburn, Georgia Berkeley Lake, Georgia Braselton, Georgia Buford, Georgia Dacula, Georgia Duluth, Georgia...

  17. Rabun County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Places in Rabun County, Georgia Clayton, Georgia Dillard, Georgia Mountain City, Georgia Sky Valley, Georgia Tallulah Falls, Georgia Tiger, Georgia Retrieved from "http:...

  18. Cherokee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Ball Ground, Georgia Canton, Georgia Holly Springs, Georgia Mountain Park, Georgia Nelson, Georgia Waleska, Georgia Woodstock, Georgia Retrieved from "http:en.openei.orgw...

  19. EECBG Success Story: In Savannah, Georgia, Even the Data is Green |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy In Savannah, Georgia, Even the Data is Green EECBG Success Story: In Savannah, Georgia, Even the Data is Green May 5, 2011 - 4:49pm Addthis The new energy efficient IT Data Center in Savannah, Georgia. | Courtesy of the City of Savannah, GA. The new energy efficient IT Data Center in Savannah, Georgia. | Courtesy of the City of Savannah, GA. Savannah, Georgia completed the relocation of its Information Technology (IT) Data Center to a high-efficiency chilled water

  20. City of Hampton, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    search Name: City of Hampton Place: Georgia Website: www.cityofhampton-ga.govservi Outage Hotline: 770-946-4306; after hours- 911 References: EIA Form EIA-861 Final Data...

  1. City of La Grange, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: City of La Grange Place: Georgia Phone Number: 706-883-2030 Website: www.lagrange-ga.orgUtilities. Outage Hotline: 706-883-2130 References: EIA...

  2. Houston County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Georgia Byron, Georgia Centerville, Georgia Perry, Georgia Robins AFB, Georgia Warner Robins, Georgia Retrieved from "http:en.openei.orgwindex.php?titleHoustonCounty,...

  3. Hart County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Hart County, Georgia Bowersville, Georgia Canon, Georgia Hartwell, Georgia Reed Creek, Georgia Royston, Georgia Retrieved from "http:...

  4. Meriwether County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Meriwether County, Georgia Gay, Georgia Greenville, Georgia Haralson, Georgia Lone Oak, Georgia Luthersville, Georgia...

  5. Harris County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Harris County, Georgia Hamilton, Georgia Pine Mountain, Georgia Shiloh, Georgia Waverly Hall, Georgia West Point, Georgia Retrieved from "http:en.openei.orgw...

  6. Middle Georgia Biofuels | Open Energy Information

    Open Energy Info (EERE)

    Georgia Biofuels Jump to: navigation, search Name: Middle Georgia Biofuels Place: East Dublin, Georgia Zip: 31027 Product: Georgia-based biodiesel producer. References: Middle...

  7. In Savannah, Georgia, Even the Data is Green | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    In Savannah, Georgia, Even the Data is Green In Savannah, Georgia, Even the Data is Green May 5, 2011 - 4:49pm Addthis The new energy efficient IT Data Center in Savannah, GA. | Courtesy of the City of Savannah, GA. The new energy efficient IT Data Center in Savannah, GA. | Courtesy of the City of Savannah, GA. John Johansen Savannah, Georgia just made a big move. It recently completed the relocation of its Information Technology (IT) Data Center from the Broughton Municipal Building to the

  8. Columbia County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Places in Columbia County, Georgia Evans, Georgia Grovetown, Georgia Harlem, Georgia Martinez, Georgia Retrieved from "http:en.openei.orgwindex.php?titleColumbiaCounty,Geor...

  9. Peach County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    A. Places in Peach County, Georgia Byron, Georgia Fort Valley, Georgia Perry, Georgia Warner Robins, Georgia Retrieved from "http:en.openei.orgwindex.php?titlePeachCounty,G...

  10. Upson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Upson County, Georgia Hannahs Mill, Georgia Lincoln Park, Georgia Salem, Georgia Sunset Village, Georgia Thomaston,...

  11. Franklin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 4 Climate Zone Subtype A. Places in Franklin County, Georgia Canon, Georgia Carnesville, Georgia Franklin Springs, Georgia Gumlog, Georgia Lavonia,...

  12. Appling County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Georgia Appling County Pellets Places in Appling County, Georgia Baxley, Georgia Graham, Georgia Surrency, Georgia Retrieved from "http:en.openei.orgw...

  13. Oconee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Oconee County, Georgia Bishop, Georgia Bogart, Georgia North High Shoals, Georgia Watkinsville, Georgia Retrieved...

  14. Terrell County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Terrell County, Georgia Bronwood, Georgia Dawson, Georgia Parrott, Georgia Sasser, Georgia Retrieved from "http:en.openei.orgw...

  15. fe0013961-GaTech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  16. BRMF Georgia Mountain Biofuels | Open Energy Information

    Open Energy Info (EERE)

    BRMF Georgia Mountain Biofuels Jump to: navigation, search Name: BRMFGeorgia Mountain Biofuels Place: Clayton, Georgia Product: Biodiesel plant developer in Georgia. References:...

  17. CONSENT-BASED SITING PUBLIC MEETING Georgia Tech Hotel and Conference...

    Office of Environmental Management (EM)

    Georgia Tech Hotel and Conference Center 800 Spring Street N.W. Atlanta, GA 30308 April 11, 2016 FULL TRANSCRIPT Mr. Jim Hamilton. Good afternoon, and to those in earlier time ...

  18. Effingham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 2 Climate Zone Subtype A. Places in Effingham County, Georgia Guyton, Georgia Rincon, Georgia Springfield, Georgia Retrieved from "http:en.openei.orgw...

  19. Glascock County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Zone Subtype A. Places in Glascock County, Georgia Edge Hill, Georgia Gibson, Georgia Mitchell, Georgia Retrieved from "http:en.openei.orgwindex.php?titleGlascockCounty,Geor...

  20. Wayne County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Zone Number 2 Climate Zone Subtype A. Places in Wayne County, Georgia Jesup, Georgia Odum, Georgia Screven, Georgia Retrieved from "http:en.openei.orgwindex.php?titleWayne...

  1. Jones County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    in Jones County, Georgia Alterra Bioenergy LLC Places in Jones County, Georgia Gray, Georgia Macon, Georgia Retrieved from "http:en.openei.orgwindex.php?titleJonesCo...

  2. Butts County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Butts County, Georgia Flovilla, Georgia Jackson, Georgia Jenkinsburg, Georgia Retrieved from "http:en.openei.orgw...

  3. Whitfield County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Zone Subtype A. Registered Energy Companies in Whitfield County, Georgia Wilson and Dalton Places in Whitfield County, Georgia Cohutta, Georgia Dalton, Georgia Tunnel Hill,...

  4. Pickens County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 4 Climate Zone Subtype A. Places in Pickens County, Georgia Jasper, Georgia Nelson, Georgia Talking Rock, Georgia Retrieved from "http:en.openei.orgw...

  5. Marietta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Act Smart Grid Projects in Marietta, Georgia Cobb Electric Membership Corporation Smart Grid Project Registered Energy Companies in Marietta, Georgia Atlanta Chemical...

  6. Georgia/Incentives | Open Energy Information

    Open Energy Info (EERE)

    Local Loan Program Yes Atlanta Gas Light - Energy Efficiency Incentive Program (Georgia) Utility Rebate Program No Biomass Sales and Use Tax Exemption (Georgia) Sales Tax...

  7. Energy Incentive Programs, Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia Energy Incentive Programs, Georgia Updated June 2015 Georgia utilities collectively budgeted over $60 million for energy efficiency and load management programs in 2014. What public-purpose-funded energy efficiency programs are available in my state? Georgia has no public-purpose-funded energy efficiency programs. What utility energy efficiency programs are available to me? Georgia Power, a subsidiary of the Southern Company, offers a variety of prescriptive incentives for

  8. Georgia's 8th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Georgia. Registered Energy Companies in Georgia's 8th congressional district Alterra Bioenergy Alterra Bioenergy LLC Biomass Energy Services Inc Middle Georgia Biofuels Retrieved...

  9. 2014 Race to Zero Student Design Competition: Georgia Institute...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia ...

  10. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    state, county, city, or district. For more information, please visit the Middle School Coach page. Georgia Region Middle School Regional Georgia Georgia Regional Middle School...

  11. Marion County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Marion County, Georgia Buena Vista, Georgia Retrieved from "http:en.openei.orgwindex.php?titleMarionCounty,Georgia...

  12. Sumter County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Registered Energy Companies in Sumter County, Georgia Habitat for Humanity Places in Sumter County, Georgia Americus, Georgia Andersonville,...

  13. Towns County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 4 Climate Zone Subtype A. Places in Towns County, Georgia Hiawassee, Georgia Young Harris, Georgia Retrieved from "http:en.openei.orgwindex.php?titleTownsCounty,G...

  14. Bryan County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 2 Climate Zone Subtype A. Places in Bryan County, Georgia Pembroke, Georgia Richmond Hill, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBryanCounty,Ge...

  15. Georgia Shore Assistance Act

    SciTech Connect (OSTI)

    Pendergrast, C.

    1984-01-01

    The Georgia General Assembly passed the Shore Assistance Act in 1979 in order to fill a regulatory gap in the state's management of its coastal resources. A review of its legislative history, purposes, applications, and effects in terms of the sand sharing system of sand dunes, beaches, sandbars, and shoals concludes that the Act is poorly drafted. In its application on the oceanfront, it betrays its intent and protects the oceanfront owner. It has failed to satisfy the requirements of the public trust in the tidal foreshore. Amendments to clarify its understanding of the functions and values of the sand-sharing system should also conform with the state's duties under the public trust. 139 references.

  16. Georgia Power- Advanced Solar Initiative

    Broader source: Energy.gov [DOE]

    Note: According to Georgia Power's website, the Advanced Solar Initiative's final program guidelines are due to be published on June 25th and the bidding period for is expected to open on July 10,...

  17. Georgia Power- Solar Buyback Program

    Broader source: Energy.gov [DOE]

    Georgia Power, the state's largest utility, has established a green power program, that allows the company to purchase limited solar generation at a premium price based on other customers volunta...

  18. Georgia Power | Open Energy Information

    Open Energy Info (EERE)

    An investor-owned utility that serves 2.25m customers in 155 counties of Georgia, USA. Coordinates: 33.748315, -84.391109 Show Map Loading map... "minzoom":false,"mappi...

  19. Mo-99

    National Nuclear Security Administration (NNSA)

    its project for domestic production of molybdenum-99 (Mo-99) without highly enriched uranium (HEU).

    Mo-99 is the parent isotope of technetium-99m, which is the most widely...

  20. Adrian, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    is a stub. You can help OpenEI by expanding it. Adrian is a city in Emanuel County and Johnson County, Georgia. It falls under Georgia's 12th congressional district.12...

  1. Camilla, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Map This article is a stub. You can help OpenEI by expanding it. Camilla is a city in Mitchell County, Georgia. It falls under Georgia's 2nd congressional district.12...

  2. Alamo, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Map This article is a stub. You can help OpenEI by expanding it. Alamo is a town in Wheeler County, Georgia. It falls under Georgia's 1st congressional district.12...

  3. Georgia Transmission Corp | Open Energy Information

    Open Energy Info (EERE)

    Corp Jump to: navigation, search Name: Georgia Transmission Corp Place: Georgia References: EIA Form EIA-861 Final Data File for 2010 - File1a1 EIA Form 861 Data Utility Id 7197...

  4. Chatsworth, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    This article is a stub. You can help OpenEI by expanding it. Chatsworth is a city in Murray County, Georgia. It falls under Georgia's 9th congressional district.12 Registered...

  5. Rome, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Rome is a city in Floyd County, Georgia. It falls under Georgia's 11st congressional district.12...

  6. Ailey, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Map This article is a stub. You can help OpenEI by expanding it. Ailey is a city in Montgomery County, Georgia. It falls under Georgia's 12th congressional district.12...

  7. Georgia Nonprofit Helps Homeowners Save Energy

    Broader source: Energy.gov [DOE]

    Residents in Georgia are living in more comfortable and energy-efficient homes because of this Savannah based weatherization program.

  8. Georgia Nuclear Profile - Power Plants

    U.S. Energy Information Administration (EIA) Indexed Site

    nuclear power plants, summer capacity and net generation, 2010" "Plant name/total reactors","Summer capacity (mw)","Net generation (thousand mwh)","Share of State nuclear net generation (percent)","Owner" "Edwin I Hatch Unit 1, Unit 2","1,759","13,902",41.5,"Georgia Power Co" "Vogtle Unit 1, Unit 2","2,302","19,610",58.5,"Georgia Power Co" "2 Plants 4

  9. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per

  10. Mo-99

    National Nuclear Security Administration (NNSA)

    NorthStar Medical Radioisotopes to further develop its technology to produce Mo-99 via neutron capture, bringing the total NNSA support to this project to the maximum of 25...

  11. McDuffie County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in McDuffie County, Georgia Dearing, Georgia Thomson, Georgia Retrieved from "http:en.openei.orgwindex.php?titleMcDuffieCounty,Geor...

  12. Bacon County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    169-2006 Climate Zone Number 2 Climate Zone Subtype A. Places in Bacon County, Georgia Alma, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBaconCounty,Georgia&o...

  13. File:USDA-CE-Production-GIFmaps-GA.pdf | Open Energy Information

    Open Energy Info (EERE)

    GA.pdf Jump to: navigation, search File File history File usage Georgia Ethanol Plant Locations Size of this preview: 776 600 pixels. Full resolution (1,650 1,275 pixels,...

  14. ,"Georgia Natural Gas LNG Storage Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  15. ,"Georgia Natural Gas LNG Storage Additions (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Additions (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  16. Chattahoochee Hill Country, Georgia: Energy Resources | Open...

    Open Energy Info (EERE)

    Hill Country, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.721548, -83.2599068 Show Map Loading map... "minzoom":false,"mappings...

  17. Georgia (country): Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Georgia Population Unavailable GDP Unavailable Energy Consumption 0.17 Quadrillion Btu 2-letter ISO code GE 3-letter ISO code GEO Numeric ISO...

  18. Americus, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    2nd congressional district.12 Registered Energy Companies in Americus, Georgia Habitat for Humanity References US Census Bureau Incorporated place and minor civil...

  19. Georgia/Wind Resources | Open Energy Information

    Open Energy Info (EERE)

    Guidebook >> Georgia Wind Resources WindTurbine-icon.png Small Wind Guidebook * Introduction * First, How Can I Make My Home More Energy Efficient? * Is Wind Energy Practical...

  20. Atlanta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Solarity Sustainable World Capital TCE Energy Corporation Waspa Wheego Electric Cars Energy Incentives for Atlanta, Georgia City of Atlanta - Sustainable Home Initiative in...

  1. Georgia Power- Small Commercial Energy Efficiency Program

    Broader source: Energy.gov [DOE]

    Georgia Power offers Small Commercial rebates to customers on qualifying rates. See program web site for additional details including eligibility information.

  2. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery...

  3. Georgia Tech School of Civil and Environmental Engineering |...

    Open Energy Info (EERE)

    School of Civil and Environmental Engineering Jump to: navigation, search Name: Georgia Tech School of Civil and Environmental Engineering Abbreviation: Georgia Tech School of CEE...

  4. City of Hogansville, Georgia (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    search Name: Hogansville City of Place: Georgia Website: www.cityofhogansville.org Facebook: https:www.facebook.comhogansville.georgia Outage Hotline: 706.637.6648...

  5. City of Oxford, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Oxford, Georgia (Utility Company) Jump to: navigation, search Name: Oxford City of Place: Georgia Phone Number: 770-786-7004 Website: www.oxfordgeorgia.org Outage Hotline:...

  6. Georgia Power Compnay Three 30 MW Renewable Projects

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Fort Stewart, and Fort Gordon 3 Project Description Fort Benning 374 acres near Columbus, Georgia 4 Fort Gordon 199 acres near Augusta, Georgia 5 Fort Stewart 227 acres ...

  7. Georgia - State Energy Profile Overview - U.S. Energy Information...

    U.S. Energy Information Administration (EIA) Indexed Site

    ... Georgia Environmental Finance Authority Georgia Energy Data Southeastern Power Administration more Play a short video to learn how to use this tool. Thank You. We welcome your ...

  8. City of Jackson, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Jackson, Georgia (Utility Company) Jump to: navigation, search Name: Jackson City of Place: Georgia Phone Number: 770-775-3858 Website: www.cityofjacksonga.com196El Facebook:...

  9. Atkinson County, Georgia ASHRAE 169-2006 Climate Zone | Open...

    Open Energy Info (EERE)

    Atkinson County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Atkinson County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  10. Georgia Tech Center for Innovative Fuel Cell and Battery Technologies...

    Open Energy Info (EERE)

    Innovative Fuel Cell and Battery Technologies Jump to: navigation, search Name: Georgia Tech Center for Innovative Fuel Cell and Battery Technologies Place: Georgia Product: The...

  11. Hancock County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Hancock County, Georgia Sparta, Georgia Retrieved from "http:en.openei.orgwindex.php?titleHancockCounty,Georgi...

  12. City of Adel, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Georgia (Utility Company) Jump to: navigation, search Name: City of Adel Place: Georgia Phone Number: (229) 896-3601 Website: www.cityofadel.usdepartments Outage Hotline: (229)...

  13. City of Lawrenceville, Georgia (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    Georgia (Utility Company) Jump to: navigation, search Name: City of Lawrenceville Place: Georgia Phone Number: 770.963.2414 Website: www.lawrencevillega.orggovern Outage Hotline:...

  14. GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI-Accredited Standards ... Georgia Tech Energy and Sustainability Services (GTESS) is an American National ...

  15. MO: ZL

    Office of Legacy Management (LM)

    II , --fsi2L /~YlO MO: ZL W./O -1 ;3UN 2 2 1984 DeLanr 6/W/f. NE-20 -24 Authorization for Remedial Action at the Seaway Industrial Park and Ashland 0 1 Co. (I) Sites at Tonawanda, 9 NY, and Mallinckrodt Chemical Co., St. Louis, MO Ba 1s J. LaGrone, Eianager Oak Ridge Operations Office 6/20/E We have determined that the subject sites are contaminated with residual NE-20 radioactive material as a result of the Manhattan Engineer District/Atomic ,/"/1. EnergyXommission operations at those

  16. SEP Success Story: Lighting Up Georgia Convenience Stores | Department of

    Energy Savers [EERE]

    Energy Lighting Up Georgia Convenience Stores SEP Success Story: Lighting Up Georgia Convenience Stores March 28, 2012 - 2:23pm Addthis One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. Convenience stores across Georgia are saving energy thanks to energy efficient lighting

  17. Alternative Fuels Data Center: Georgia Transportation Data for Alternative

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Fuels and Vehicles Georgia Transportation Data for Alternative Fuels and Vehicles to someone by E-mail Share Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Facebook Tweet about Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Twitter Bookmark Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Google Bookmark Alternative Fuels Data Center: Georgia

  18. Clean Cities: Clean Cities-Georgia

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atlanta was designated as the first Clean Cities coalition in the nation at the Georgia Dome in 1993. Prior to being elected as the coalition's executive director, Francis served...

  19. Georgia Renewable Electric Power Industry Statistics

    Gasoline and Diesel Fuel Update (EIA)

    Georgia Primary Renewable Energy Capacity Source Hydro ... Conventional 2,052 5.6 Solar - - Wind - - WoodWood ... Absolute percentage less than 0.05. - No data reported. ...

  20. Central Georgia EMC- Photovoltaic Rebate Program

    Broader source: Energy.gov [DOE]

    In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

  1. Fossil Energy | National Energy Technology Laboratory | Georgia...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering and an adjunct professor in the College of Computing and the Ernest J. Scheller College of Business. He served as a Vice President and Director of the Georgia Tech...

  2. Milton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Milton is a city in Fulton County, Georgia.1 References US Census Bureau Incorporated...

  3. Georgia Power- Energy Efficiency Home Improvement Rebates

    Broader source: Energy.gov [DOE]

    Georgia Power offers up to $2,575 in rebates to customers who choose to improve home performance with whole building BPI certified efficiency measures or up to $700 for individual improvements from...

  4. NNSA Awards Mo-99 Cooperative Agreement to General Atomics | National

    National Nuclear Security Administration (NNSA)

    Nuclear Security Administration Library / Press Releases NNSA Awards Mo-99 Cooperative Agreement to General Atomics September 30, 2015 WASHINGTON, DC - Today, the Department of Energy's National Nuclear Security Administration (DOE/NNSA) announced that it will award a cooperative agreement to General Atomics (GA) to support its project for domestic production of molybdenum-99 (Mo-99) without highly enriched uranium (HEU). Mo-99 is the parent isotope of technetium-99m, which is the most

  5. College Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. College Park is a city in Clayton County and Fulton County, Georgia. It falls under Georgia's 5th...

  6. Central Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    Central Georgia El Member Corp Place: Georgia Phone Number: 770-775-7857 Website: www.cgemc.com Twitter: @CentralGAEMC Outage Hotline: 770-775-7857 References: EIA Form EIA-861...

  7. Pine Mountain, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    article is a stub. You can help OpenEI by expanding it. Pine Mountain is a town in Harris County and Meriwether County, Georgia. It falls under Georgia's 3rd congressional...

  8. Middle Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    El Member Corp Place: Georgia Phone Number: 1-800-342-0144 Website: www.mgemc.com Facebook: https:www.facebook.comMiddleGeorgiaEMC Outage Hotline: 229-268-2671; 800-342-0144...

  9. McCaysville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Act Smart Grid Projects in McCaysville, Georgia Tri State Electric Membership Corporation Smart Grid Project Utility Companies in McCaysville, Georgia Tri-State Electric Member...

  10. Georgia's 2nd congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Energy Companies in Georgia's 2nd congressional district First United Ethanol LLC Habitat for Humanity Retrieved from "http:en.openei.orgwindex.php?titleGeorgia%27s2ndc...

  11. North Georgia Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: North Georgia Elec Member Corp Place: Georgia Phone Number: Dalton: (706) 259-9441; Fort Oglethorpe: (706) 866-2231; Calhoun: (706) 629-3160; Trion:...

  12. City of Commerce, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    City of Commerce, Georgia (Utility Company) Jump to: navigation, search Name: City of Commerce Place: Georgia Phone Number: (706) 335-4200 Website: www.commercega.orgContentDef...

  13. Ben Hill County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Ben Hill County, Georgia Fitzgerald, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBenHillCounty,Geo...

  14. Georgia State Historic Preservation Programmatic Agreement | Department of

    Energy Savers [EERE]

    Georgia Recovery Act State Memo Georgia Recovery Act State Memo Georgia has substantial natural resources, including biomass and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the nation's energy and environmental future. The Recovery Act investments in Georgia are supporting a broad range of clean energy projects, from energy efficiency and the smart grid to environmental cleanup and alternative fuels and vehicles. Through these

  15. 2014 Race to Zero Student Design Competition: Georgia Institute of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Technology Profile | Department of Energy Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile, from the U.S. Department of Energy. PDF icon rtz_georgia_profile.pdf More Documents & Publications 2014 Race to Zero Student Design Competition: Auburn University Profile 2014 Race to Zero Student Design Competition: University of

  16. Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    | Department of Energy Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System) Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System) PDF icon Proposed rate adjustment for the Georgia-Alabama-South Carolina System of Projects More Documents & Publications CX-001068: Categorical Exclusion Determination SOCO-4-E Wholesale Power Rate Schedule Regulation-1

  17. Analysis of natural gases, AL, AR, FL, GA, IL, IN, IA, KY, LA, MD, MI, MS, MO, NJ, NY, NC, OH, PA, TN, VA, and WV; 1951-1991 (for microcomputers). Data file

    SciTech Connect (OSTI)

    Not Available

    1991-01-01

    The U.S. Bureau of Mines diskette contains analysis and related source data for 2,357 natural gas samples collected from miscellaneous states, which include the following states: Alabama, Arkansas (except Arkoma Basin), Florida, Georgia, Illinois, Indiana, Iowa, Kentucky, Louisiana, Maryland, Michigan, Mississippi, Missouri, New Jersey, New York, North Carolina, Ohio, Pennsylvania, Tennessee, Virginia, and West Virginia. All samples were obtained and analyzed as part of the Bureau's investigations of occurrences of helium in natural gases of countries with free market economies. The survey has been conducted since 1917. The analysis contained on the diskette contain the full range of component analysis data. Five files are on the diskette: READ.ME, MISC.TXT, MISC.DBF, USHEANAL.DBF, and BASINCDE.TXT.

  18. Water-supply potential of the Upper Floridan aquifer in the vicinity of Savannah, Georgia

    SciTech Connect (OSTI)

    Garza, R.; Krause, R.E. )

    1993-03-01

    The Upper Floridan aquifer is the primary source of freshwater in coastal Georgia. Groundwater withdrawal in the area of Savannah and in the adjacent coastal areas in Georgia and South Carolina has resulted in large regional water-level declines and a reversal of the hydraulic gradient that existed prior to development. Changes in gradient and decreasing water levels are causing lateral encroachment of seawater into the Upper Floridan aquifer at the northern end of Hilton Head Island, SC, and vertical intrusion of saltwater into the Upper and Lower Floridan aquifers in the Brunswick, GA., area. Concerns about future water-supply demands prompted the US Geological Survey and the Chatham County-Savannah Metropolitan Planning Commission to undertake a cooperative study to evaluate the ground-water resources in the Savannah, GA, area. A numerical ground-water flow model was developed and used in conjunction with other previously calibrated models in the coastal areas of Georgia and South Carolina to simulate the effects of additional ground-water withdrawal on water levels. Based on model simulations and the constraint of preventing additional water-level declines at the locations of encroachment and intrusion, the potential of the Upper Floridan aquifer to supply additional water in the Savannah area is limited under present hydrologic conditions. The potential for additional withdrawal in the vicinity of Savannah, GA, ranges from less than 1 million gallons per day (Mgal/d) to about 5 Mgal/d. Because of the limited water-supply potential, hypothetical alternatives of ground-water withdrawal were simulated to determine the effects on water levels. These simulations indicate that reduction and redistribution of ground-water withdrawal would not adversely affect water levels at the locations of encroachment and intrusion.

  19. EA-1963: Elba Liquefaction Project, Savannah, Georgia

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERCs eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

  20. Georgia Green Loans Save & Sustain Program | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    technologies not identified Program Info Sector Name Non-Profit Administrator Georgia Green Loans Website http:www.georgiagreenloans.org Funding Source U.S. Small Business...

  1. sorbent-georgia-tech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rapid Temperature Swing Adsorption Using PolymerSupported Amine Composite Hollow Fibers Project No.: DE-FE0007804 Georgia Tech Research Corporation is developing, fabricating, and...

  2. Georgia Power Company (GPC), Oglethorpe Power Corporation (OPC...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia Power Company (GPC), Oglethorpe Power Corporation ... of the nation's next generation of advanced nuclear reactors. ... existing reactors, featuring advanced safety components. ...

  3. Mountain Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8442715, -84.1293605 Show Map Loading map... "minzoom":false,"mappingservice"...

  4. Gresham Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Gresham Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7034405, -84.3143682 Show Map Loading map... "minzoom":false,"mapping...

  5. Belvedere Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Belvedere Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 32.4606984, -84.9040969 Show Map Loading map... "minzoom":false,"mappi...

  6. Clay County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.6447931, -85.0025539 Show Map Loading map... "minzoom":false,"mappingservice":"goog...

  7. EA-1963: Elba Liquefaction Project, Savannah, Georgia | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Gas Terminal near Savannah, Georgia. Additional information is available at FERC's eLibrary website, elibrary.ferc.govidmwsdocketsearch.asp; search for docket number PF13-3....

  8. City of Mansfield, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    search Name: City of Mansfield Place: Georgia Website: www.mansfieldga.comutilities. Facebook: https:www.facebook.commansfieldga Outage Hotline: 770-710-8235 References: EIA...

  9. Georgia's 4th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Vega Biofuels Inc formerly Vega Promotional Systems Retrieved from "http:en.openei.orgwindex.php?titleGeorgia%27s4thcongressionaldistrict&oldid1854...

  10. Georgia-UNEP Risoe Technology Needs Assessment Program | Open...

    Open Energy Info (EERE)

    UNEP Risoe Technology Needs Assessment Program Jump to: navigation, search Name Georgia-UNEP Risoe-Technology Needs Assessment Program AgencyCompany Organization UNEP-Risoe...

  11. Building America Case Study: Savannah Gardens, Savannah, Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Savannah Gardens Savannah, Georgia PROJECT INFORMATION Construction: New home Type: Single-family, affordable Partners: Savannah Housing Department Chatham Home Builders Southface ...

  12. Georgia Department of Natural Resources (GDNR) | Open Energy...

    Open Energy Info (EERE)

    References Retrieved from "http:en.openei.orgwindex.php?titleGeorgiaDepartmentofNaturalResources(GDNR)&oldid765343" Categories: Organizations Oil and Gas State Oil and...

  13. Irwin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Irwin County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.5893221, -83.2934086 Show Map Loading map... "minzoom":false,"mapping...

  14. ,"Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)",1,"Annual",2012 ,"Release...

  15. ,"Georgia Natural Gas Imports Price All Countries (Dollars per...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet)",1,"Annual",2014...

  16. Sandy Springs, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Springs, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.9242688, -84.3785379 Show Map Loading map... "minzoom":false,"mappingservi...

  17. Polk County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Polk County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.0132398, -85.1479364 Show Map Loading map... "minzoom":false,"mappings...

  18. Pierce County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Pierce County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.343806, -82.1713632 Show Map Loading map... "minzoom":false,"mapping...

  19. Washington County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Washington County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 32.962702, -82.820974 Show Map Loading map... "minzoom":false,"mapp...

  20. Barrow County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Barrow County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.0142667, -83.6986568 Show Map Loading map... "minzoom":false,"mappin...

  1. Atkinson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Atkinson County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.2932161, -82.8640623 Show Map Loading map... "minzoom":false,"mapp...

  2. Georgia's 6th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Grid Project Registered Energy Companies in Georgia's 6th congressional district Atlanta Chemical Engineering LLC Cellnet Legacy Environmental Solutions Prenova Inc formerly...

  3. Georgia's 11th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Grid Project Registered Energy Companies in Georgia's 11th congressional district Atlanta Chemical Engineering LLC Prenova Inc formerly Service Resources Inc Sriya Innovations Inc...

  4. Georgia's 13th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Grid Project Registered Energy Companies in Georgia's 13th congressional district Atlanta Chemical Engineering LLC Prenova Inc formerly Service Resources Inc Sriya Innovations Inc...

  5. Cobb County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Smart Grid Project Registered Energy Companies in Cobb County, Georgia Atlanta Chemical Engineering LLC H I Solutions Inc Prenova Inc formerly Service Resources Inc...

  6. Georgia's 9th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Resource Solutions ECO Solutions LLC Greenleaf Environmental Solutions Wilson and Dalton Utility Companies in Georgia's 9th congressional district Tri-State Electric Member...

  7. EECBG Success Story: Georgia County Turning Industrial and Farm...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia County Turning Industrial and Farm Waste Into Big Energy Savings EECBG Success ... Learn more. Addthis Related Articles EECBG Success Story: County Aims to Save with ...

  8. Sakis Meliopoulos, Georgia Institute of Technology, PSERC webinar...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... He has received a number of awards, including the Georgia Tech Outstanding Continuing Education Award (2002 and 2014), the IEEE Richard Kaufman Award (2005), and the George ...

  9. Georgia-World Bank Climate Projects | Open Energy Information

    Open Energy Info (EERE)

    Projects Jump to: navigation, search Name Georgia-World Bank Climate Projects AgencyCompany Organization World Bank Focus Area Renewable Energy, Hydro Topics Background analysis...

  10. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    In Waynesboro, Secretary Chu will join Southern Company CEO Thomas A. Fanning, Georgia ... WHO: Steven Chu, U.S. Department of Energy Secretary Thomas A. Fanning, Southern Company, ...

  11. Hall County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hall County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.30778, -83.804868 Show Map Loading map... "minzoom":false,"mappingserv...

  12. Georgia Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the nation's energy and environmental future. The Recovery Act investments in Georgia are ...

  13. Stone Mountain, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Stone Mountain, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8081608, -84.170196 Show Map Loading map... "minzoom":false,"mappin...

  14. Dawson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Dawson County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.412912, -84.1435136 Show Map Loading map... "minzoom":false,"mapping...

  15. Georgia Renewable Electric Power Industry Statistics

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia Primary Renewable Energy Capacity Source Hydro Conventional Primary Renewable Energy Generation Source Hydro Conventional Capacity (megawatts) Value Percent of State Total Total Net Summer Electricity Capacity 36,636 100.0 Total Net Summer Renewable Capacity 2,689 7.3 Geothermal - - Hydro Conventional 2,052 5.6 Solar - - Wind - - Wood/Wood Waste 617 1.7 MSW/Landfill Gas 17 * Other Biomass 4 * Generation (thousand megawatthours) Total Electricity Net Generation 137,577 100.0 Total

  16. Georgia Renewable Electric Power Industry Statistics

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia" "Primary Renewable Energy Capacity Source","Hydro Conventional" "Primary Renewable Energy Generation Source","Hydro Conventional" "Capacity (megawatts)","Value","Percent of State Total" "Total Net Summer Electricity Capacity",36636,100 "Total Net Summer Renewable Capacity",2689,7.3 " Geothermal","-","-" " Hydro Conventional",2052,5.6 "

  17. GEORGIA GENERAL ASSEMBLY 4/2010

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GEORGIA GENERAL ASSEMBLY 4/2010 10 LC 94 2861 House Resolution 1823 By: Representatives Murphy of the 120 th , Harbin of the 118 th , Frazier of the 123 rd , Howard of the 121 st , Sims of the 119 th , and others A RESOLUTION Urging the United States Department of Energy, the United States Congress, and the current administration to continue the development of Yucca Mountain as the site for permanent storage of defense nuclear waste and commercial spent nuclear fuel and requesting that the

  18. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect (OSTI)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  19. Georgia Number of Natural Gas Consumers

    Gasoline and Diesel Fuel Update (EIA)

    Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2010 78 70 78 75 78 75 78 78 75 78 75 78 2011 93 84 93 90 93 90 93 93 90 93 90 93 2012 93 87 93 90 93 90 93 93 90 93 90 93 2013 85 77 85 82 85 82 85 85 82 85 82 85 2014 99 90 99 96 99 96 99 99 96 99 96 99 2015 105 95 105 102 105 92 99 99 96 99 96 99 2016 111 100

    Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6

  20. Evans County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Evans County is a county in Georgia. Its FIPS County Code is 109. It is classified as ASHRAE...

  1. Johnson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Johnson County is a county in Georgia. Its FIPS County Code is 167. It is classified as...

  2. Mitchell County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Mitchell County is a county in Georgia. Its FIPS County Code is 205. It is classified as...

  3. White County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. White County is a county in Georgia. Its FIPS County Code is 311. It is classified as ASHRAE...

  4. Webster County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Webster County is a county in Georgia. Its FIPS County Code is 307. It is classified as...

  5. Miller County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Miller County is a county in Georgia. Its FIPS County Code is 201. It is classified as ASHRAE...

  6. Wheeler County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Wheeler County is a county in Georgia. Its FIPS County Code is 309. It is classified as...

  7. Central Georgia EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes.  This year,...

  8. Taylor County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Taylor County is a county in Georgia. Its FIPS County Code is 269. It is classified as ASHRAE...

  9. Jackson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Jackson County is a county in Georgia. Its FIPS County Code is 157. It is classified as...

  10. Stewart County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Stewart County is a county in Georgia. Its FIPS County Code is 259. It is classified as...

  11. ,"Georgia Natural Gas Price Sold to Electric Power Consumers...

    U.S. Energy Information Administration (EIA) Indexed Site

    ,,"(202) 586-8800",,,"1292016 12:16:48 AM" "Back to Contents","Data 1: Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)"...

  12. Lee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Lee County is a county in Georgia. Its FIPS County Code is 177. It is classified as ASHRAE...

  13. Richmond County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Richmond County is a county in Georgia. Its FIPS County Code is 245. It is classified as...

  14. City of Palmetto, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Place: Georgia Phone Number: (770) 463-3322 Website: citypalmetto.comindex.aspx?ni Outage Hotline: (770) 463-3322 References: EIA Form EIA-861 Final Data File for 2010 -...

  15. Henry County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Henry County is a county in Georgia. Its FIPS County Code is 151. It is classified as ASHRAE...

  16. Murray County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Murray County is a county in Georgia. Its FIPS County Code is 213. It is classified as ASHRAE...

  17. Tift County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Its FIPS County Code is 277. It is classified as ASHRAE 169-2006 Climate Zone Number 3 Climate Zone Subtype A. Registered Energy Companies in Tift County, Georgia Biomass...

  18. Floyd County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Floyd County is a county in Georgia. Its FIPS County Code is 115. It is classified as ASHRAE...

  19. Montgomery County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Montgomery County is a county in Georgia. Its FIPS County Code is 209. It is classified as...

  20. Pike County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Pike County is a county in Georgia. Its FIPS County Code is 231. It is classified as ASHRAE...

  1. Georgia Heat Content of Natural Gas Deliveries to Consumers ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Heat Content of Natural Gas Deliveries to Consumers (BTU per Cubic Foot) Georgia Heat Content of Natural Gas Deliveries to Consumers (BTU per Cubic Foot) Year Jan Feb Mar Apr May ...

  2. Georgia Tech's Rohatgi Wins Second Annual Rappaport Award - News Releases |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NREL Georgia Tech's Rohatgi Wins Second Annual Rappaport Award December 10, 2003 Golden, Colo. - The U.S. Department of Energy's National Renewable Energy Laboratory (NREL) has presented the 2003 Paul Rappaport Renewable Energy and Energy Efficiency Award to Ajeet Rohatgi, founding director of the University Center of Excellence for Photovoltaics Research and Education at the Georgia Institute of Technology. "Dr. Rohatgi has for more than a quarter century focused his immense technical

  3. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  4. Bacon County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy...

    Open Energy Info (EERE)

    Bacon County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Bacon County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone Number...

  5. Ben Hill County, Georgia ASHRAE 169-2006 Climate Zone | Open...

    Open Energy Info (EERE)

    Ben Hill County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Ben Hill County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  6. Barrow County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy...

    Open Energy Info (EERE)

    Barrow County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Barrow County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone Number...

  7. Role of Ce4<mo>+> in the scintillation mechanism of codoped Gd3Ga3Al2O12<mo>:>Ce

    SciTech Connect (OSTI)

    Wu, Yuntao; Meng, Fang; Li, Qi; Koschan, Merry; Melcher, Charles L.

    2014-10-17

    To control the time-response performance of widely used cerium-activated scintillators in cutting-edge medical-imaging devices, such as time-of-flight positron-emission tomography, a comprehensive understanding of the role of Ce valence states, especially stable Ce4+, in the scintillation mechanism is essential. However, despite some progress made recently, an understanding of the physical processes involving Ce4+ is still lacking. The aim of this work is to clarify the role of Ce4+ in scintillators by studying Ca2+ codoped Gd3Ga3Al2O12?Ce?(GGAG?Ce). By using a combination of optical absorption spectra and x-ray absorption near-edge spectroscopies, the correlation between Ca2+codoping content and the Ce4+ fraction is seen. The energy-level diagrams of Ce3+ and Ce4+ in the Gd3Ga3Al2O12 host are established by using theoretical and experimental methods, which indicate a higher position of the 5d1 state of Ce4+ in the forbidden gap in comparison to that of Ce3+. Underlying reasons for the decay-time acceleration resulting from Ca2+ codoping are revealed, and the physical processes of the Ce4+-emission model are proposed and further demonstrated by temperature-dependent radioluminescence spectra under x-ray excitation.

  8. Georgia Natural Gas Underground Storage Withdrawals (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Withdrawals (Million Cubic Feet) Georgia Natural Gas Underground Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's 33 27 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016 Referring Pages: Withdrawals of Natural Gas from Underground Storage - All Operators Georgia Underground Natural Gas Storage -

  9. Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Vehicles Georgia Sets the Pace for Plug-In Electric Vehicles to someone by E-mail Share Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Facebook Tweet about Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Twitter Bookmark Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Google Bookmark Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Delicious

  10. US WNC MO Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    WNC MO Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US WNC MO Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 3,000 6,000 9,000 12,000 15,000 US WNC MO Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 US WNC MO Expenditures dollars ELECTRICITY ONLY average per household * Missouri households consume an average of 100 million Btu per year, 12% more than the U.S. average. * Average household energy costs in Missouri are slightly less

  11. GA-AL-SC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Area: PowerSouth Off-System System: Georgia-Alabama-South Carolina October 1, 2012 SOCO-3-E Wholesale Power Rate Schedule Area: MEAG, Dalton System: Georgia-Alabama-South Carolina ...

  12. Microsoft Word - DOE-ID-14-043 Georgia Institute of Tech. _1...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Georgia Institute of Technology will conduct laboratory scale research on metal ion adsorption from aqueous solutions to provide a better understanding of the performance of...

  13. 6,"Edwin I Hatch","Nuclear","Georgia Power Co",1759 7,"Thomas...

    U.S. Energy Information Administration (EIA) Indexed Site

    Power Co",1793 6,"Edwin I Hatch","Nuclear","Georgia Power Co",1759 7,"Thomas A Smith Energy Facility","Natural gas","Oglethorpe Power Corporation",1290 ...

  14. d::;":,",:::,, ST. LOUIS.7. MO,

    Office of Legacy Management (LM)

    i ,' CKRODT CHEMICAL d::;":,",:::,, ST. LOUIS.7. MO, PiARCH 14, ,jq;ll MR. H. L. PRICE, ... I AL PERAT I ONS DF MALL- INCKRODT ' CHEMICAL b:ORKS WOULD LIKE TO MAKE.APPLlCATlON ...

  15. Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia

    Broader source: Energy.gov [DOE]

    Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia.

  16. Georgia Natural Gas Input Supplemental Fuels (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Input Supplemental Fuels (Million Cubic Feet) Georgia Natural Gas Input Supplemental Fuels (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1960's 0 0 0 1970's 0 0 0 0 0 0 0 0 0 0 1980's 24 57 151 84 28 121 124 248 241 292 1990's 209 185 166 199 123 130 94 14 16 12 2000's 73 51 7 14 5 0 3 2 52 2010's 732 701 660 642 635 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data.

  17. Georgia Natural Gas Underground Storage Injections All Operators (Million

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) Underground Storage Injections All Operators (Million Cubic Feet) Georgia Natural Gas Underground Storage Injections All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's 123 366 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016 Referring Pages: Injections of Natural Gas into Underground

  18. Georgia Natural Gas Underground Storage Net Withdrawals All Operators

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Net Withdrawals All Operators (Million Cubic Feet) Georgia Natural Gas Underground Storage Net Withdrawals All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's -90 -339 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016 Referring Pages: Net Withdrawals of Natural Gas from

  19. Georgia Renewable Electric Power Industry Net Generation, by Energy Source

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Geothermal","-","-","-","-","-" "Hydro Conventional",2569,2236,2145,3260,3322 "Solar","-","-","-","-","-" "Wind","-","-","-","-","-" "Wood/Wood Waste",3362,3362,2660,2746,3054 "MSW Biogenic/Landfill Gas",25,16,31,51,83

  20. Georgia Total Electric Power Industry Net Generation, by Energy Source

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Fossil",100299,107165,99661,90634,97823 " Coal",86504,90298,85491,69478,73298 " Petroleum",834,788,742,650,641 " Natural Gas",12961,16079,13428,20506,23884 " Other Gases","-","-","-","-","-" "Nuclear",32006,32545,31691,31683,33512 "Renewables",5988,5652,4927,6085,6502 "Pumped

  1. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    Energy Consumption Survey www.eia.govconsumptionresidential Space heating Water heating Air conditioning Appliances, electronics, lighting Household Energy Use in Georgia ...

  2. EERE Success Story-Georgia: Data Center and Historic Municipal Building

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Go Green | Department of Energy Georgia: Data Center and Historic Municipal Building Go Green EERE Success Story-Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can consume 100 to 200 times more electricity than standard office spaces, making them prime candidates for energy-efficient designs that can save money and reduce electricity use. In Savannah, Georgia, energy savings from the greening of a data center and the retrofit of

  3. Remarks by Federal Blue Ribbon Commission J. David Jameson Atlanta, GA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Federal Blue Ribbon Commission J. David Jameson Atlanta, GA October 18, 2011 Good Morning. I am David Jameson. I am President and CEO of the Greater Aiken, South Carolina, Chamber of Commerce. I am here today in my capacity as current Chairman of the SRS Community Reuse Organization. The SRSCRO is a non-profit regional group supporting economic diversification and job creation in a five-county in Georgia and South Carolina near the Department of Energy's Savannah River Site. We are unique among

  4. Optimization of the Processing of Mo Disks

    SciTech Connect (OSTI)

    Tkac, Peter; Rotsch, David A.; Stepinski, Dominique; Makarashvili, Vakhtang; Harvey, James; Vandegrift, George F.

    2016-01-01

    The objective of this work is to decrease the processing time for irradiated disks of enriched Mo for the production of 99Mo. Results are given for the dissolution of nonirradiated Mo disks, optimization of the process for large-scale dissolution of sintered disks, optimization of the removal of the main side products (Zr and Nb) from dissolved targets, and dissolution of irradiated Mo disks.

  5. SSL Demonstration: Street Lighting, Kansas City, MO

    SciTech Connect (OSTI)

    2013-08-01

    GATEWAY program report brief summarizing an SSL street lighting demonstration at nine separate installations in Kansas City, MO.

  6. Georgia Natural Gas Imports from All Countries (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    from All Countries (Million Cubic Feet) Georgia Natural Gas Imports from All Countries (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 0 2000's 0 2,563 16,837 43,927 105,203 132,062 146,766 170,243 135,711 142,244 2010's 106,454 75,641 59,266 15,575 7,155 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016 Referring

  7. Georgia Natural Gas LNG Storage Additions (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Additions (Million Cubic Feet) Georgia Natural Gas LNG Storage Additions (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 20,484 1,508 1,555 1,024 678 1,834 1,942 1,150 1,702 2,930 1990's 2,779 1,969 1,573 1,855 3,788 3,746 6,523 3,221 1,760 607 2000's 3,241 6,772 3,426 5,422 5,570 5,971 7,705 2,817 4,372 3,182 2010's 2,693 3,306 2,097 1,385 7,130 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid

  8. Georgia Natural Gas LNG Storage Withdrawals (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Withdrawals (Million Cubic Feet) Georgia Natural Gas LNG Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 19,950 3,106 2,914 1,193 881 2,359 1,346 1,001 1,157 2,586 1990's 1,435 1,579 1,557 1,896 3,881 5,210 6,712 3,374 2,458 2,010 2000's 4,367 562 1,029 3,283 4,518 4,535 1,968 1,493 1,891 1,210 2010's 2,314 764 719 180 4,046 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure

  9. Georgia Natural Gas Number of Commercial Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Commercial Consumers (Number of Elements) Georgia Natural Gas Number of Commercial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 94 98,809 102,277 106,690 1990's 108,295 109,659 111,423 114,889 117,980 120,122 123,200 123,367 126,050 225,020 2000's 128,275 130,373 128,233 129,867 128,923 128,389 127,843 127,832 126,804 127,347 2010's 124,759 123,454 121,243 126,060 122,573 - = No Data Reported; -- = Not Applicable; NA = Not

  10. Georgia Natural Gas Number of Industrial Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Industrial Consumers (Number of Elements) Georgia Natural Gas Number of Industrial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 3 3,034 3,144 3,079 1990's 3,153 3,124 3,186 3,302 3,277 3,261 3,310 3,310 3,262 5,580 2000's 3,294 3,330 3,219 3,326 3,161 3,543 3,053 2,913 2,890 2,254 2010's 2,174 2,184 2,112 2,242 2,481 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual

  11. Georgia Natural Gas Number of Residential Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Residential Consumers (Number of Elements) Georgia Natural Gas Number of Residential Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 1,190 1,237,201 1,275,128 1,308,972 1990's 1,334,935 1,363,723 1,396,860 1,430,626 1,460,141 1,495,992 1,538,458 1,553,948 1,659,730 1,732,865 2000's 1,680,749 1,737,850 1,735,063 1,747,017 1,752,346 1,773,121 1,726,239 1,793,650 1,791,256 1,744,934 2010's 1,740,587 1,740,006 1,739,543 1,805,425

  12. Georgia Natural Gas Pipeline and Distribution Use (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Georgia Natural Gas Pipeline and Distribution Use (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 7,973 7,606 8,846 2000's 5,636 7,411 7,979 7,268 6,235 5,708 6,092 5,188 5,986 6,717 2010's 8,473 10,432 10,509 7,973 6,977 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016 Referring Pages:

  13. Georgia Natural Gas Total Consumption (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Total Consumption (Million Cubic Feet) Georgia Natural Gas Total Consumption (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 371,376 368,579 337,576 2000's 413,845 351,109 383,546 379,761 394,986 412,560 420,469 441,107 425,043 462,799 2010's 530,030 522,897 615,771 625,283 652,230 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release

  14. Georgia Natural Gas LNG Storage Net Withdrawals (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Net Withdrawals (Million Cubic Feet) Georgia Natural Gas LNG Storage Net Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 534 -1,598 -1,359 -169 -203 -525 596 149 545 343 1990's 1,345 390 16 -42 -94 -1,464 -189 -153 -698 -1,403 2000's -1,126 6,210 2,397 -2,138 -1,052 -1,436 -5,737 1,323 2,481 1,972 2010's 379 2,542 1,378 1,205 3,085 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure

  15. Georgia Natural Gas Vehicle Fuel Consumption (Million Cubic Feet)

    Gasoline and Diesel Fuel Update (EIA)

    Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 17,054 33,351 32,505 2000's 42,034 34,666 56,588 32,258 45,926 72,267 95,407 121,726 96,316 142,467 2010's 175,082 196,492 308,096 279,506 289,783 354,090 Feet)

    Price All Countries (Dollars per Thousand Cubic Feet) Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's -- 2000's -- 1.92

  16. sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage

    SciTech Connect (OSTI)

    Waddell, Michael

    2014-09-30

    This study focuses on evaluating the feasibility and suitability of using the Jurassic/Triassic (J/TR) sediments of the South Georgia Rift basin (SGR) for CO2 storage in southern South Carolina and southern Georgia The SGR basin in South Carolina (SC), prior to this project, was one of the least understood rift basin along the east coast of the U.S. In the SC part of the basin there was only one well (Norris Lightsey #1) the penetrated into J/TR. Because of the scarcity of data, a scaled approach used to evaluate the feasibility of storing CO2 in the SGR basin. In the SGR basin, 240 km (~149 mi) of 2-D seismic and 2.6 km2 3-D (1 mi2) seismic data was collected, process, and interpreted in SC. In southern Georgia 81.3 km (~50.5 mi) consisting of two 2-D seismic lines were acquired, process, and interpreted. Seismic analysis revealed that the SGR basin in SC has had a very complex structural history resulting the J/TR section being highly faulted. The seismic data is southern Georgia suggest SGR basin has not gone through a complex structural history as the study area in SC. The project drilled one characterization borehole (Rizer # 1) in SC. The Rizer #1 was drilled but due to geologic problems, the project team was only able to drill to 1890 meters (6200 feet) instead of the proposed final depth 2744 meters (9002 feet). The drilling goals outlined in the original scope of work were not met. The project was only able to obtain 18 meters (59 feet) of conventional core and 106 rotary sidewall cores. All the conventional core and sidewall cores were in sandstone. We were unable to core any potential igneous caprock. Petrographic analysis of the conventional core and sidewall cores determined that the average porosity of the sedimentary material was 3.4% and the average permeability was 0.065 millidarcy. Compaction and diagenetic studies of the samples determined there would not be any porosity or permeability at depth in SC. In Georgia there appears to be porosity in the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

  17. Georgia County Turning Industrial and Farm Waste Into Big Energy Savings

    Office of Energy Efficiency and Renewable Energy (EERE)

    Thanks to a Department of Energy Recovery Act grant, Gwinnett County, Georgia is taking some of the grossest stuff on earth and turning it into some of the greenest stuff on earth.

  18. Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report

    SciTech Connect (OSTI)

    SC Energy Office: Southern Alliance for Clean Energy

    2013-02-12

    This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

  19. EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

  20. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia

    SciTech Connect (OSTI)

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

  1. EECBG Success Story: Georgia County Turning Industrial and Farm Waste Into Big Energy Savings

    Broader source: Energy.gov [DOE]

    Gwinnett County, Georgia built a "Gas to Energy" system at the city water resources center that will reduce operational costs and sanitary sewer overflows, thanks to an Energy Efficiency and Conservation Block Grant (EECBG). Learn more.

  2. Microsoft Word - DOE-ID-14-045 Georgia Institute of Tech. ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Description Georgia Tech Research Corporation will develop a novel, high-performance, low-energy intensity, lower-cost zeolite membrane process for KrXe separation during spent...

  3. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    Energy Savers [EERE]

    Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 | Department of Energy Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S

  4. DOE - Office of Legacy Management -- Washington University - MO 07

    Office of Legacy Management (LM)

    Washington University - MO 07 FUSRAP Considered Sites Site: WASHINGTON UNIVERSITY (MO.07 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: St. Louis , Missouri MO.07-1 Evaluation Year: 1987 MO.07-1 Site Operations: Activities were limited to programs involving relatively small quantities of radionuclides and chemicals in a controlled environment. MO.07-3 MO.07-1 Site Disposition: Eliminated - Potential for contamination remote MO.07-1

  5. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect (OSTI)

    Wade, M.C. ); Billig, P. )

    1993-01-01

    Zone 1, Robins Air Force Base, Georgia, has been designated a National Priorities List Site by the US Environmental Protection Agency. The Remedial Investigation for Zone 1 recommended a quantitative analysis of ecological risk. To accomplish this task a characterization of the bottomland hardwood forest ecosystem present on the base was required. This ecological characterization included the study of hydrology, aquatic and wildlife biology, and wetlands ecology where potential impacts were in question. In addition, a suitable reference area was studied. The hydrologic investigation consisted primarily of the installation of water level recorders and staff gauges, collection of surface water data, installation of piezometers and collection of groundwater data, and the collection of rainfall data. The aquatic biology investigation centered around the sampling of benthic macroinvertebrate communities, bioassay toxicity tests for surface water and sediment, fish sampling, aquatic macrophyte collection, macrophyte collection, and emergent and free-floating plant collection. The wildlife biology investigation focused on a breeding bird survey. The wetlands ecology investigation comprised the collection of soil and vegetation samples and using the Wetland Evaluation Technique (WET) to assess the functions and values of the wetlands present.

  6. Georgia Natural Gas Pipeline and Distribution Use Price (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Pipeline and Distribution Use Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1960's 0.19 0.19 0.19 1970's 0.20 0.22 0.23 0.25 0.28 0.32 0.36 0.67 0.90 1.35 1980's 2.10 2.78 3.11 3.22 3.26 3.23 3.32 2.50 2.41 2.69 1990's 2.19 2.08 2.08 2.24 2.14 1.93 2.62 3.09 2.48 2.18 2000's 3.30 4.57 NA -- -- -- - = No Data Reported; -- = Not Applicable; NA

  7. Georgia Natural Gas % of Total Residential Deliveries (Percent)

    Gasoline and Diesel Fuel Update (EIA)

    Foot) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 1,014 1,015 1,016 1,015 1,014 1,015 1,016 1,019 1,017 1,016 1,017 1,017 2014 1,018 1,018 1,018 1,018 1,021 1,022 1,023 1,023 1,027 1,026 1,026 1,025 2015 1,025 1,026 1,025 1,026 1,028 1,031 1,030 1,028 1,029 1,028 1,026 1,027 2016 1,029 1,030

    % of Total Residential Deliveries (Percent) Georgia Natural Gas % of Total Residential Deliveries (Percent) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9

  8. Energy conserving site design case study: Shenandoah, Georgia. Final report

    SciTech Connect (OSTI)

    Not Available

    1980-01-01

    The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

  9. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  10. Mo99 Production Plant Layout

    SciTech Connect (OSTI)

    Woloshun, Keith Albert; Dale, Gregory E.; Naranjo, Angela Carol

    2015-06-25

    The NorthStar Medical Technologies 99Mo production facility configuration is envisioned to be 8 accelerator pairs irradiating 7 100Mo targets (one spare accelerator pair undergoing maintenance while the other 7 pairs are irradiating targets). The required shielding in every direction for the accelerators is initially estimated to be 10 feet of concrete. With the accelerator pairs on one (ground) level and spaced with the required shielding between adjacent pairs, the only practical path for target insertion and removal while minimizing floor space is vertical. The current scheme then requires a target vertical lift of nominally 10 feet through a shield stack. It is envisioned that the lift will be directly into a hot cell where an activated target can be removed from its holder and a new target attached and lowered. The hot cell is on a rail system so that a single hot cell can service all active target locations, as well as deliver the ready targets to the separations lab. On this rail system, coupled to the hot cell, will be a helium recovery and clean-up system. All helium coolant equipment is located on the upper level near to the target removal point.

  11. The Economic Impact of the Savannah River Site on the Adjacent Five Counties in South Carolina and Georgia

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Economic Impact of the Savannah River Site on Five Adjacent Counties in South Carolina and Georgia ____________________________________________________________________________________ i The Economic Impact of the Savannah River Site on Five Adjacent Counties in South Carolina and Georgia ____________________________________________________________________________________ ii ACKNOWLEDGEMENTS The O'Connell Center for Executive Development at the University of South Carolina-Aiken would like to

  12. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect (OSTI)

    Wade, M.; Billig, P.

    1993-05-01

    Landfill No. 4 and the sludge lagoon at Robins Air Force Base, Warner Robins, Georgia, were added to the United States Environmental Protection Agency (EPA) National Priorities List in 1987 because of highpotential for contaminant migration. Warner Robins is located approximately 90 miles southeast of Atlanta. In 1990 CH2M HILL conducted a Remedial Investigation at the base that recommended that further ecological assessment investigations be conducted (CH2M HILL 1990). The subject paper is the result of this recommendation. The ecological study was carried out by the Hazardous Waste Remedial Actions Program (HAZWRAP)Division of Martin Marietta Energy Systems, Inc., working jointly with its subcontractor CDM (CDM 1992a). The primary area of investigation (Zone 1) included the sludge lagoon, Landfill No. 4, the wetland area east of the landfill and west of Hannah Road (including two sewage treatment ponds), and the area between Hannah Road and Horse Creek (Fig. 1). The bottomland forest wetlands of Zone 1 extend from the landfill east to Horse Creek. Surface water and groundwater flow across Zone 1 is generally in an easterly direction toward Horse Creek. Horse Creek is a south-flowing tributary of the Ocmulgee River Floodplain. The objective of the study was to perform a quantitative analysis of ecological risk associated with the ecosystems present in Zone 1. This investigation was unique because the assessment was to be based upon many measurement endpoints resulting in both location-specific data and data that would assess the condition of the overall ecosystem. The study was segregated into five distinct field investigations: hydrology, surface water and sediment, aquatic biology, wetlands ecology, and wildlife biology.

  13. DOE - Office of Legacy Management -- Spencer Chemical Co - MO...

    Office of Legacy Management (LM)

    MO 0-01 FUSRAP Considered Sites Site: SPENCER CHEMICAL CO. (MO.0-01) Eliminated from ... Also see Documents Related to SPENCER CHEMICAL CO. MO.0-01-1 - Spencer Chemical Company ...

  14. DOE - Office of Legacy Management -- St Louis Airport - MO 01

    Office of Legacy Management (LM)

    Operations: Stored uranium process residues containing uranium, radium, and thorium for the MED and AEC. MO.01-2 MO.01-3 MO.01-4 Eligibility Determination: Eligible ...

  15. Sakis Meliopoulos, Georgia Institute of Technology, PSERC webinar, 2/16/2016

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Protection and Control of Systems with Converter Interfaced Generation Sakis Meliopoulos Georgia Power Distinguished Professor School of Electrical and Computer Engineering Georgia Institute of Technology sakis.m@gatech.edu PSERC Public Webinar February 16, 2016 2:00-3:00 p.m. Eastern Time (11:00-12:00 p.m. Pacific) If you plan to use the phone bridge, use the NEW number: 877-820-7831 (passcode: 965722#). Description: The protection of converter interfaced generation and associated circuits and

  16. Missouri Department of National Resources Energy Center Mo DNR...

    Open Energy Info (EERE)

    Department of National Resources Energy Center Mo DNR Jump to: navigation, search Name: Missouri Department of National Resources Energy Center (Mo DNR) Place: Jefferson City,...

  17. DOE - Office of Legacy Management -- United Nuclear Corp - MO...

    Office of Legacy Management (LM)

    Nuclear Corp - MO 0-03 FUSRAP Considered Sites Site: UNITED NUCLEAR CORP. (MO.0-03) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate ...

  18. Demonstration of LED Street Lighting in Kansas City, MO (Technical...

    Office of Scientific and Technical Information (OSTI)

    Demonstration of LED Street Lighting in Kansas City, MO Citation Details In-Document Search Title: Demonstration of LED Street Lighting in Kansas City, MO Nine different ...

  19. Update to M&O Contractor Model Subcontract entitled "Standard...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to M&O Contractor Model Subcontract entitled "Standard Research Subcontract (Educational Institution or Nonprofit Organization)" Update to M&O Contractor Model Subcontract entitled ...

  20. Tuning the electronic structure of monolayer graphene/ Mo S 2...

    Office of Scientific and Technical Information (OSTI)

    Tuning the electronic structure of monolayer graphene Mo S 2 van der Waals ... Title: Tuning the electronic structure of monolayer graphene Mo S 2 van der Waals ...

  1. DOE - Office of Legacy Management -- West Lake Landfill - MO...

    Office of Legacy Management (LM)

    Lake Landfill - MO 05 FUSRAP Considered Sites Site: West Lake Landfill (MO.05) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition:...

  2. Thermophysical Properties of U-10MO Alloy

    SciTech Connect (OSTI)

    A. M. Phillips; G. S. Mickum; D. E. Burkes

    2010-11-01

    This report provides an overview of thermophysical properties of unirradiated uranium alloyed with ten weight percent molybdenum (U 10Mo), with particular focus on those material properties needed for modeling of new fuels for HPRRs (High Performance Research Reactors). The report contains both historical data available in the literature on U-10Mo, as well as more recent results conducted by the Global Threat Reduction Initiative fuel development program. The main use of the report is intended as a standard U-10Mo alloy properties reference for reactor models and simulations.

  3. Effects of Zn additions to highly magnetoelastic FeGa alloys

    SciTech Connect (OSTI)

    Lograsso, Thomas A.; Jones, Nicholas J.; Wun-Fogle, Marilyn; Restorff, James B.; Schlagel, Deborah L.; Petculescu, Gabriela; Clark, Arthur E.; Hathaway, Kristl B.

    2015-05-07

    Fe{sub 1−x}M{sub x} (M = Ga, Ge, Si, Al, Mo and x ∼ 0.18) alloys offer an extraordinary combination of magnetoelasticity and mechanical properties. They are rare-earth-free, can be processed using conventional deformation techniques, have high magnetic permeability, low hysteresis, and low magnetic saturation fields, making them attractive for device applications such as actuators and energy harvesters. Starting with Fe-Ga as a reference and using a rigid-band-filling argument, Zhang et al. predicted that lowering the Fermi level by reducing the total number of electrons could enhance magnetoelasticity. To provide a direct experimental validation for Zhang's hypothesis, elemental additions with lower-than-Ga valence are needed. Of the possible candidates, only Be and Zn have sufficient solubility. Single crystals of bcc Fe-Ga-Zn have been grown with up to 4.6 at. % Zn in a Bridgman furnace under elevated pressure (15 bars) in order to overcome the high vapor pressure of Zn and obtain homogeneous crystals. Single-crystal measurements of magnetostriction and elastic constants allow for the direct comparison of the magnetoelastic coupling constants of Fe-Ga-Zn with those of other magnetoelastic alloys in its class. The partial substitution of Ga with Zn yields values for the magnetoelastic coupling factor, −b{sub 1}, comparable to those of the binary Fe-Ga alloy.

  4. Mo Year Report Period: EIA ID NUMBER:

    U.S. Energy Information Administration (EIA) Indexed Site

    Mo Year Report Period: EIA ID NUMBER: http:www.eia.govsurveyformeia14instructions.pdf Mailing Address: Secure File Transfer option available at: (e.g., PO Box, RR) https:...

  5. Release on M&O Selection Final

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Federal Services LLC, of Bethesda, Maryland) has been awarded a 1.3 billion contract for management and operating (M&O) at DOE's Waste Isolation Pilot Plant (WIPP) in Carlsbad,...

  6. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  7. EA-1865: Department of Energy Loan Guarantee to Kior, Inc., for Biorefinery Facilities in Georgia, Mississippi, and Texas

    Broader source: Energy.gov [DOE]

    This EA will evaluate the environmental impacts of a proposal to issue a Federal loan guarantee to Kior, Inc., for biorefinery facilities in Georgia, Mississippi, and Texas. This EA is on hold.

  8. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  9. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  10. Two-dimensional GaSe/MoSe2 Misfit Bilayer Heterojunctions by...

    Office of Scientific and Technical Information (OSTI)

    fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. ...

  11. Elevated Temperature Tensile Tests on DU–10Mo Rolled Foils

    SciTech Connect (OSTI)

    Schulthess, Jason

    2014-09-01

    Tensile mechanical properties for uranium-10 wt.% molybdenum (U–10Mo) foils are required to support modeling and qualification of new monolithic fuel plate designs. It is expected that depleted uranium-10 wt% Mo (DU–10Mo) mechanical behavior is representative of the low enriched U–10Mo to be used in the actual fuel plates, therefore DU-10Mo was studied to simplify material processing, handling, and testing requirements. In this report, tensile testing of DU-10Mo fuel foils prepared using four different thermomechanical processing treatments were conducted to assess the impact of foil fabrication history on resultant tensile properties.

  12. Oxidation, Reduction, and Condensation of Alcohols over (MO3)3 (M=Mo, W) Nanoclusters

    SciTech Connect (OSTI)

    Fang, Zongtang; Li, Zhenjun; Kelley, Matthew S.; Kay, Bruce D.; Li, Shenggang; Hennigan, Jamie M.; Rousseau, Roger J.; Dohnalek, Zdenek; Dixon, David A.

    2014-10-02

    The reactions of deuterated methanol, ethanol, 1-propanol, 1-butanol, 2-propanol, 2-butanol and t-butanol over cyclic (MO3)3 (M = Mo, W) clusters were studied experimentally with temperature programmed desorption (TPD) and theoretically with coupled cluster CCSD(T) theory and density functional theory. The reactions of two alcohols per M3O9 cluster are required to provide agreement with experiment for D2O release, dehydrogenation and dehydration. The reaction begins with the elimination of water by proton transfers and forms an intermediate dialkoxy species which can undergo further reaction. Dehydration proceeds by a ? hydrogen transfer to a terminal M=O. Dehydrogenation takes place via an ? hydrogen transfer to an adjacent MoVI = O atom or a WVI metal center with redox involved for M = Mo and no redox for M = W. The two channels have comparable activation energies. H/D exchange to produce alcohols can take place after olefin is released or via the dialkoxy species depending on the alcohol and the cluster. The Lewis acidity of the metal center with WVI being larger than MoVI results in the increased reactivity of W3O9 over Mo3O9 for dehydrogenation and dehydration.

  13. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  14. DOE - Office of Legacy Management -- Rogers Iron Works Co - MO...

    Office of Legacy Management (LM)

    of Ohio Analytical Data Sheet 9908; August 2, 1956 MO.10-2 - MemorandumChecklist, Williams to File; Subject: Rogers Iron; June 1, 1990 MO.10-3 - DOE Memorandum; Williams to the...

  15. DOE - Office of Legacy Management -- Latty Avenue Site - MO 04

    Office of Legacy Management (LM)

    MO.04-1 - DOE Letter; Keller to Jarboe; Subject: Agreement for Use of Property at 9200 Latty Avenue, Hazelwood, Missouri; November 22, 1983 MO.04-10 - DOE Report (ORNLRASA-857); ...

  16. Accelerator Production Options for 99MO

    SciTech Connect (OSTI)

    Bertsche, Kirk; /SLAC

    2010-08-25

    Shortages of {sup 99}Mo, the most commonly used diagnostic medical isotope, have caused great concern and have prompted numerous suggestions for alternate production methods. A wide variety of accelerator-based approaches have been suggested. In this paper we survey and compare the various accelerator-based approaches.

  17. MOED_of_the_Italian_Republic.PDF | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    MOED_of_the_Italian_Republic.PDF MOED_of_the_Italian_Republic.PDF PDF icon MOED_of_the_Italian_Republic.PDF More Documents & Publications Scanned_Agreement.pdf International_Agreements_January_2001_December_2004.pdf Implementing Arrangement Between DOE and METI on R&D Cooperation on Clean Energy Technology - April 2015

  18. Intermetallic phase formation and breakdown of Mo diffusion barriers in Ni-Mo-Cu and Ni-Mo-Monel 400 diffusion triads

    SciTech Connect (OSTI)

    Shueh, Y.

    1988-01-01

    The purpose of this research was to study the kinetics of compound formation and the interdiffusion behavior of a sacrificial type diffusion barrier in a model system. Ni-Mo diffusion couples were annealed in an inert atmosphere at 950-1050{degree}C for 5-300 hours. Ni-Mo-Cu and Ni-Mo-Monel 400 diffusion triads with varied thicknesses of Mo layers sandwiched by Ni and C or Monel 400 disks were annealed under the same conditions. Parabolic growth of the intermetallic phase, {beta}, was observed at 1000{degree}C and 1050{degree}C in the semi-infinite Ni-Mo diffusion couple an din the Ni-Mo-Cu diffusion triad when a finite thickness of the Mo layer remained. The {beta} phase exhibited more or less planar morphology except in the case of some extremely rugged interfaces which were associated with grain boundaries adjacent to these interfaces. Dissociation and recession of the compound layer in Ni-Mo-Cu diffusion triads initiated when the Mo layer was nearly consumed. The product phases of the dissociation reaction are consistent with those predicted from the Ni-Mo-Cu ternary phase diagram. Numerical methods based on a finite difference technique, and an analytical solution based on diffusion controlled parabolic growth and quasi-steady-state approximation in the {beta} phase region were used to analyze the results.

  19. Enhanced photocatalytic performance of Ga{sup 3+}-doped ZnO

    SciTech Connect (OSTI)

    Zhong, Jun Bo; Li, Jian Zhang; Zeng, Jun; He, Xi Yang; Hu, Wei; Shen, Yue Cheng

    2012-11-15

    Graphical abstract: In general, the strong SPS response corresponds to the high separation rate of photoinduced charge carriers on the basis of the SPS principle. The photovoltage of Ga{sup 3+}-doped ZnO is higher than that of ZnO, thus it can be confirmed that the Ga{sup 3+}-doped ZnO has a higher charge separation rate than the ZnO sample. Among these samples, 1%Ga has highest charge separation rate. Display Omitted Highlights: ► Ga{sup 3+} has been employed to dope ZnO photocatalyst. ► Ga{sup 3+} increases the BET surface area and changes the morphology of ZnO. ► The photoinduced charge separation rate has been enhanced. ► The photocatalytic activity has been greatly promoted. -- Abstract: ZnO and Ga{sup 3+}-doped ZnO with different molar ratio of Ga/Zn (1%, 2% and 3%) were prepared by a parallel flow precipitation method. The photocatalysts prepared were characterized by BET surface area, X-ray diffraction (XRD), UV/vis diffuse reflectance spectroscopy (DRS), scanning electron microscope (SEM) and surface photovoltage spectroscopy (SPS), respectively. The results show that doping Ga{sup 3+} into ZnO increases the BET surface area. The XRD spectra of the photocatalysts calcined at 573 K show only the characteristic peaks of wurtzite-type. Ga{sup 3+}-doped ZnO absorbs much more light than ZnO in the visible light region. Doping Ga{sup 3+} into ZnO greatly changes the morphology of ZnO and enhances the photoinduced charge separation rate. The photocatalytic activity of ZnO and Ga{sup 3+}-doped ZnO for decolorization of methyl orange (MO) solution was evaluated, of all the photocatalysts prepared, the Ga{sup 3+}-doped ZnO with 1% possesses the best photocatalytic activity and the possible reason was discussed.

  20. Role of SrMoO{sub 4} in Sr{sub 2}MgMoO{sub 6} synthesis

    SciTech Connect (OSTI)

    Vasala, S.; Yamauchi, H.; Karppinen, M.

    2011-05-15

    Here we investigate the elemental and phase compositions during the solid-state synthesis of the promising SOFC-anode material, Sr{sub 2}MgMoO{sub 6}, and demonstrate that molybdenum does not notably evaporate under the normal synthesis conditions with temperatures up to 1200 {sup o}C due to the formation of SrMoO{sub 4} as an intermediate product at low temperatures, below 600 {sup o}C. However, partial decomposition of the Sr{sub 2}MgMoO{sub 6} phase becomes evident at the higher temperatures ({approx}1500 {sup o}C). The effect of SrMoO{sub 4} on the electrical conductivity of Sr{sub 2}MgMoO{sub 6} is evaluated by preparing a series of Sr{sub 2}MgMoO{sub 6} samples with different amounts of additional SrMoO{sub 4}. Under the reducing operation conditions of an SOFC anode the insulating SrMoO{sub 4} phase is apparently reduced to the highly conductive SrMoO{sub 3} phase. Percolation takes place with 20-30 wt% of SrMoO{sub 4} in a Sr{sub 2}MgMoO{sub 6} matrix, with a notable increase in electrical conductivity after reduction. Conductivity values of 14, 60 and 160 S/cm are determined at 800 {sup o}C in 5% H{sub 2}/Ar for the Sr{sub 2}MgMoO{sub 6} samples with 30, 40 and 50 wt% of added SrMoO{sub 4}, respectively. -- Graphical abstract: SrMoO{sub 4} is formed at low temperatures during the synthesis of Sr{sub 2}MgMoO{sub 6}, which prevents the volatilization of Mo from typical precursor mixtures of this promising SOFC anode material. SrMoO{sub 4} is insulating and it is often found as an impurity in Sr{sub 2}MgMoO{sub 6} samples. It is however readily reduced to highly conducting SrMoO{sub 3}. Composites of Sr{sub 2}MgMoO{sub 6} and SrMoO{sub 3} show increased electrical conductivities compared to pure Sr{sub 2}MgMoO{sub 6} under the reductive operation conditions of an SOFC anode. Display Omitted Highlights: {yields} Sr{sub 2}MgMoO{sub 6} is a promising SOFC anode material. {yields} During the Sr{sub 2}MgMoO{sub 6} synthesis SrMoO{sub 4} is formed at low temperatures. {yields} Formation of SrMoO{sub 4} effectively prevents volatilization of Mo at high temperatures. {yields} Insulating SrMoO{sub 4} reduces to highly conductive SrMoO{sub 3} under SOFC-anode conditions. {yields} Composites of Sr{sub 2}MgMoO{sub 6} and SrMoO{sub 3} show high electrical conductivities.

  1. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  2. Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells

    SciTech Connect (OSTI)

    Shafarman, William N.

    2015-10-12

    This project “Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells”, completed by the Institute of Energy Conversion (IEC) at the University of Delaware in collaboration with the Department of Chemical Engineering at the University of Florida, developed the fundamental understanding and technology to increase module efficiency and improve the manufacturability of Cu(InGa)(SeS)2 films using the precursor reaction approach currently being developed by a number of companies. Key results included: (1) development of a three-step H2Se/Ar/H2S reaction process to control Ga distribution through the film and minimizes back contact MoSe2 formation; (2) Ag-alloying to improve precursor homogeneity by avoiding In phase agglomeration, faster reaction and improved adhesion to allow wider reaction process window; (3) addition of Sb, Bi, and Te interlayers at the Mo/precursor junction to produce more uniform precursor morphology and improve adhesion with reduced void formation in reacted films; (4) a precursor structure containing Se and a reaction process to reduce processing time to 5 minutes and eliminate H2Se usage, thereby increasing throughput and reducing costs. All these results were supported by detailed characterization of the film growth, reaction pathways, thermodynamic assessment and device behavior.

  3. Superfund at work: Hazardous waste cleanup efforts nationwide, Spring 1993 (Powersville site profile, Peach County, Georgia)

    SciTech Connect (OSTI)

    Not Available

    1993-01-01

    The US Environmental Protection Agency (EPA) encountered much more than a municipal landfill at the Powersville site in Peach County, Georgia. Contamination from improperly dumped hazardous wastes and pesticides tainted an old quarry used for household garbage. Chemicals migrating into area ground water threatened local drinking water supplies. To address these issues, EPA's Superfund program designed a cleanup strategy that included: negotiating with the county and chemical companies to contain the hazardous wastes on site underneath a protective cover; investigating reports of drinking water contamination and extending municipal water lines to affected residents; and conducting a tailored community relations program to inform and educate residents about the site.

  4. Georgia Renewable Electric Power Industry Net Summer Capacity, by Energy Source

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Geothermal","-","-","-","-","-" "Hydro Conventional",2027,2032,2041,2046,2052 "Solar","-","-","-","-","-" "Wind","-","-","-","-","-" "Wood/Wood Waste",450,621,591,587,617 "MSW/Landfill Gas",5,10,10,15,17 "Other

  5. Georgia Total Electric Power Industry Net Summer Capacity, by Energy Source

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Fossil",28238,28096,28078,28103,28087 " Coal",13438,13275,13256,13211,13230 " Petroleum",2182,2169,2187,2188,2189 " Natural Gas",12618,12652,12635,12705,12668 " Other Gases","-","-","-","-","-" "Nuclear",4060,3995,4061,4061,4061 "Renewables",2526,2706,2642,2648,2689 "Pumped

  6. ,"Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Price (Dollars per Thousand Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)",1,"Monthly","2/2016" ,"Release Date:","4/29/2016" ,"Next Release Date:","5/31/2016" ,"Excel File

  7. ,"Georgia Natural Gas LNG Storage Net Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    LNG Storage Net Withdrawals (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Net Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","4/29/2016" ,"Next Release Date:","5/31/2016" ,"Excel File

  8. ,"Georgia Natural Gas Vehicle Fuel Consumption (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Vehicle Fuel Consumption (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Vehicle Fuel Consumption (MMcf)",1,"Monthly","2/2016" ,"Release Date:","4/29/2016" ,"Next Release Date:","5/31/2016" ,"Excel File

  9. Appearance Results from MiniBooNE Georgia Karagiorgi Columbia University

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Appearance Results from MiniBooNE Georgia Karagiorgi Columbia University WIN'11 - Cape Town, South Africa 2 Outline of this talk: -- The LSND excess signal: Evidence for high-Δm 2 oscillations -- The MiniBooNE experiment -- MiniBooNE neutrino mode oscillation results: LSND signature refuted -- MiniBooNE antineutrino mode oscillation results: LSND signature confrmed ? -- Light sterile neutrino oscillations: Where we stand today -- Future searches: MiniBooNE, MicroBooNE 1993 -1998 1998 2001

  10. Density Profiles in Sputtered Molybdenum Thin Films and Their Effects on Sodium Diffusion in Cu(InxGa1-x)Se2 Photovoltaics

    SciTech Connect (OSTI)

    Li, J.; Glynn, S.; Mansfield, L.; Young, M.; Yan, Y.; Contreras, M.; Noufi, R.; Terry Jr., F. L.; Levi, D.

    2011-01-01

    Molybdenum (Mo) thin films were sputtered onto soda lime glass (SLG) substrates. The main variable in the deposition parameters, the argon (Ar) pressure p{sub Ar}, was varied in the range of 6-20 mTorr. Ex situ spectroscopic ellipsometry (SE) was performed to find out that the dielectric functions {var_epsilon} of the Mo films were strongly dependent on p{sub Ar}, indicating a consistent and significant decrease in the Mo film density {rho}{sub Mo} with increasing p{sub Ar}. This trend was confirmed by high-angle-annular-dark-field scanning transmission electron microscopy. {var_epsilon} of Mo was then found to be correlated with secondary ion mass spectroscopy profiles of Sodium (Na) in the Cu(In{sub x}Ga{sub 1-x})Se{sub 2} (CIGS) layer grown on top of Mo/SLG. Therefore, in situ optical diagnostics can be applied for process monitoring and optimization in the deposition of Mo for CIGS solar cells. Such capability is demonstrated with simulated optical transmission and reflectance of variously polarized incident light, using {var_epsilon} deduced from SE.

  11. Mo-99 | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    Mo-99 DOE/NNSA Successfully Establishes Uranium Lease and Takeback Program to Support Critical Medical Isotope Production In January 2016, the U.S. Department of Energy's National Nuclear Security Administration (DOE/NNSA) successfully established the Uranium Lease and Take-Back (ULTB) program, as directed in the American Medical Isotopes Production Act of 2012, to support the commercial production of the medical... NNSA's work aids in fight against cancer World Cancer Day encourages citizens

  12. General Atomics (GA) Fusion News: A New Spin on Understanding...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New ...

  13. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  14. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  15. MoRu/Be multilayers for extreme ultraviolet applications

    DOE Patents [OSTI]

    Bajt, Sasa C.; Wall, Mark A.

    2001-01-01

    High reflectance, low intrinsic roughness and low stress multilayer systems for extreme ultraviolet (EUV) lithography comprise amorphous layers MoRu and crystalline Be layers. Reflectance greater than 70% has been demonstrated for MoRu/Be multilayers with 50 bilayer pairs. Optical throughput of MoRu/Be multilayers can be 30-40% higher than that of Mo/Be multilayer coatings. The throughput can be improved using a diffusion barrier to make sharper interfaces. A capping layer on the top surface of the multilayer improves the long-term reflectance and EUV radiation stability of the multilayer by forming a very thin native oxide that is water resistant.

  16. DOE - Office of Legacy Management -- Petrolite Corp - MO 08

    Office of Legacy Management (LM)

    Materials Handled: Yes Primary Radioactive Materials Handled: Uranium Flouride & Thorium Oxide MO.08-2 Radiological Survey(s): None Indicated Site Status: Eliminated from ...

  17. Microsoft Word - chapter FeCrMo_ver2.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Low-Alloy Ferritic Steels Fe-Cr-Mo Tempered December 8, 2005 ... strength level, material processing, and heat treatment 1. ... yield strength, hydrogen gas pressure, and temperature. ...

  18. Demonstration of LED Street Lighting in Kansas City, MO Kinzey...

    Office of Scientific and Technical Information (OSTI)

    Street Lighting in Kansas City, MO Kinzey, Bruce R.; Royer, Michael P.; Hadjian, M.; Kauffman, Rick LED streetlighting; field illuminance measurement LED streetlighting; field...

  19. Predicting sigma formation in mo-bearing stainless steels. (Conference...

    Office of Scientific and Technical Information (OSTI)

    Title: Predicting sigma formation in mo-bearing stainless steels. No abstract prepared. Authors: Perricone, Matthew ; Dupont, John Neuman ; Anderson, T. D. 1 ; Robino, Charles ...

  20. Structure and electronic properties of Cu nanoclusters supported on Mo2C(001) and MoC(001) surfaces

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Posada-Pérez, Sergio; Viñes, Francesc; Rodríguez, José A.; Illas, Francesc

    2015-09-15

    In this study, the atomic structure and electronic properties of Cun nanoclusters (n = 4, 6, 7, and 10) supported on cubic nonpolar δ-MoC(001) and orthorhombic C- or Mo-terminated polar β-Mo2C(001) surfaces have been investigated by means of periodic density functional theory based calculations. The electronic properties have been analyzed by means of the density of states, Bader charges, and electron localization function plots. The Cu nanoparticles supported on β-Mo2C(001), either Mo- or C-terminated, tend to present a two-dimensional structure whereas a three-dimensional geometry is preferred when supported on δ-MoC(001), indicating that the Mo:C ratio and the surface polarity playmore » a key role determining the structure of supported clusters. Nevertheless, calculations also reveal important differences between the C- and Mo-terminated β-Mo2C(001) supports to the point that supported Cu particles exhibit different charge states, which opens a way to control the reactivity of these potential catalysts.« less

  1. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking

    Broader source: Energy.gov [DOE]

    SOPERTON, GA - U.S. Secretary of Energy Samuel W. Bodman today attended a groundbreaking ceremony for Range Fuels' biorefinery - one of the nation's first commercial-scale cellulosic ethanol...

  2. Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation Exercise

    Broader source: Energy.gov [DOE]

    COVINGTON, Ga. – Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help them prepare for an actual incident.

  3. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  4. SREL Reprint #3188

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 2Department of Environmental Health Science, University of Georgia, Athens, GA 30602,...

  5. Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Price All Countries (Dollars per Thousand Cubic Feet) Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's -- 2000's -- 1.92 3.51 5.12 6.47 9.18 7.03 6.79 9.71 3.73 2010's 4.39 4.20 2.78 3.36 4.33 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016

  6. Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 3.54 4.07 3.86 3.86 4.14 4.10 2000's -- -- 13.05 12.93 12.91 12.11 2010's 5.17 5.57 14.51 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016 Referring Pages:

  7. Georgia Natural Gas Delivered to Commercial Consumers for the Account of

    Gasoline and Diesel Fuel Update (EIA)

    Others (Million Cubic Feet) Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Georgia Natural Gas Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 1,067 3,418 5,176 1990's 5,721 6,395 6,389 5,487 4,304 3,663 3,646 6,211 9,078 16,996 2000's 48,726 40,531 38,395 39,611 44,025 42,112 38,204 38,967 41,555 43,845 2010's 49,157 46,512 42,971 46,494

  8. Semi-automated lab-on-a-chip for dispensing GA-68 radiotracers

    SciTech Connect (OSTI)

    Weinberg, Irving

    2014-03-12

    We solved a technical problem that is hindering American progress in molecular medicine, and restricting US citizens from receiving optimal diagnostic care. Specifically, the project deals with a mother/daughter generator of positron-emitting radiotracers (Ge-68/Ga-68). These generator systems are approved in Europe but cannot be used in the USA, because of safety issues related to possible breakthrough of long-lived Ge-68 (mother) atoms. Europeans have demonstrated abilities of Ga-68-labeled radiotracers to image cancer foci with high sensitivity and specificity, and to use such methods to effectively plan therapy.The USA Food and Drug Administration (FDA) and Nuclear Regulatory Commission (NRC) have taken the position that every patient administration of Ga-68 should be preceded by an assay demonstrated that Ge-68 breakthrough is within acceptable limits. Breakthrough of parent elements is a sensitive subject at the FDA, as evidenced by the recent recall of Rb-82 generators due to inadvertent administrations of Sr-82. Commercially, there is no acceptable rapid method for assaying breakthrough of Ge-68 prior to each human administration. The gamma emissions of daughter Ga-68 have higher energies than the parent Ge-68, so that the shielding assays typically employed for Mo-99/Tc-99m generators cannot be applied to Ga-68 generators. The half-life of Ga-68 is 68 minutes, so that the standard 10-half-life delay (used to assess breakthrough in Sr-82/Rb-82 generators) cannot be applied to Ga-68 generators. As a result of the aforementioned regulatory requirements, Ga-68 generators are sold in the USA for animal use only.The American clinical communitys inability to utilize Ga-68 generators impairs abilities to treat patients domestically, and puts the USA at a disadvantage in developing exportable products. The proposed DOE project aimed to take advantage of recent technological advances developed for lab-on-a-chip (LOC) applications. Based on our experiences constructing such devices, the proposed microfluidics-based approach could provide cost-effective validation of breakthrough compliance in minutes.

  9. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  10. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  11. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  12. Neutrino scattering off the stable even-even Mo isotopes

    SciTech Connect (OSTI)

    Balasi, K. G.; Kosmas, T. S.; Divari, P. C. [Theoretical Physics Section, University of Ioannina, GR 45110 Ioannina (Greece)

    2009-11-09

    Inelastic neutrino-nucleus reaction cross sections are studied focusing on the neutral current processes. Particularly, we investigate the angular and initial neutrino-energy dependence of the differential and integrated cross sections for low and intermediate energies of the incoming neutrino. The nuclear wave functions for the initial and final nuclear states are constructed in the context of the quasi-particle random phase approximation (QRPA) tested on the reproducibility of the low-lying energy spectrum. The results presented here refer to the isotopes Mo{sup 92}, Mo{sup 94}, Mo{sup 96}, Mo{sup 98} and Mo{sup 100}. These isotopes could play a significant role in supernova neutrino detection in addition to their use in double-beta and neutrinoless double-beta decay experiments (e.g. MOON, NEMO III)

  13. Fragile structural transition in Mo3Sb7

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yan, Jiaqiang -Q.; McGuire, Michael A; May, Andrew F; Parker, David S.; Mandrus, D. G.; Sales, Brian C.

    2015-01-01

    Mo3Sb7 single crystals lightly doped with Cr, Ru, or Te are studied in order to explore the interplay between superconductivity, magnetism, and the cubic-tetragonal structural transition. The structural transition at 53 K is extremely sensitive to Ru or Te substitution which introduces additional electrons, but robust against Cr substitution. We observed no sign of a structural transition in superconducting Mo2.91Ru0.09Sb7 and Mo3Sb6.975Te0.025. In contrast, 3 at.% Cr doping only slightly suppresses the structural transition to 48 K while leaving no trace of superconductivity above 1.8 K. Analysis of magnetic properties suggests that the interdimer interaction in Mo3Sb7 is near amore » critical value and essential for the structural transition. Futhermore, all dopants suppress the superconductivity of Mo3Sb7. The tetragonal structure is not necessary for superconductivity.« less

  14. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  15. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  16. Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial...

    Office of Scientific and Technical Information (OSTI)

    Rotationally Commensurate Growth of MoSsubscript 2 on Epitaxial Graphene Citation Details In-Document Search Title: Rotationally Commensurate Growth of MoSsubscript 2 on ...

  17. Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS{sub 2}

    SciTech Connect (OSTI)

    Wei, Xiaoxu; Yu, Zhihao; Cheng, Ying; Yu, Linwei; Wang, Junzhuan Wang, Xinran; Shi, Yi; Hu, Fengrui; Wang, Xiaoyong; Xiao, Min

    2014-12-15

    In this work, we report a strong photoluminescence (PL) enhancement of monolayer MoS{sub 2} under different treatments. We find that by simple ambient annealing treatment in the range of 200?C to 400?C, the PL emission can be greatly enhanced by a factor up to two orders of magnitude. This enhancement can be attributed to two factors: first, the formation of Mo-O bonds during ambient exposure introduces an effective p-doping in the MoS{sub 2} layer; second, localized electrons formed around Mo-O bonds related defective sites where the electrons can be effectively localized with higher binding energy resulting in efficient radiative excitons recombination. Time resolved PL decay measurement showed that longer lifetime of the treated sample consistent with the higher quantum efficiency in PL. These results give more insights to understand the luminescence properties of the MoS{sub 2}.

  18. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: Biedermann, Laura Butler ; Kaplar, Robert James ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2012-10-01 OSTI Identifier: 1111316 Report Number(s):

  19. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Conference: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: DasGupta, Sandeepan ; Biedermann, Laura Butler ; Kaplar, Robert ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2013-02-01 OSTI Identifier:

  20. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  1. EA-1963: Elba Liquefaction Project; Chatham, Hart, Jefferson, and Effingham Counties, Georgia, and Jasper County, South Carolina

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERC’s eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket numbers CP14-103-000 and CP14-115-000.

  2. Georgia-Pacific Palatka Plant Uses Thermal Pinch Analysis and Evaluates Water Reduction in Plant-Wide Energy Assessment

    SciTech Connect (OSTI)

    2002-12-01

    This OIT BestPractices Case Study describes the methods and results used in a plant-wide assessment at a Georgia-Pacific paper mill in Palatka, FL. Assessment personnel recommended several projects, which, if implemented, have the potential to save the plant more than 729,000 MMBtu per year and $2.9 million per year. In addition, the plant could reduce water use by 2,100 gallons per minute.

  3. Long-Term Need for New Nuclear Workers The SRS Community Reuse Organization (SRSCRO) Region of Georgia

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Long-Term Need for New Nuclear Workers The SRS Community Reuse Organization (SRSCRO) Region of Georgia and South Carolina has the most unique nuclear industry capabilities in the nation. This region is at the forefront of new nuclear power production, environmental stewardship, innovative technology and national security. In 2009, the SRSCRO commissioned a survey of eight area nuclear employers that concluded nearly 10,000 new workers will be needed in the next decade to support existing

  4. A novel three dimensional semimetallic MoS{sub 2}

    SciTech Connect (OSTI)

    Tang, Zhen-Kun; Zhang, Hui; Liu, Li-Min; Liu, Hao; Lau, Woon-Ming

    2014-05-28

    Transition metal dichalcogenides (TMDs) have many potential applications, while the performances of TMDs are generally limited by the less surface active sites and the poor electron transport efficiency. Here, a novel three-dimensional (3D) structure of molybdenum disulfide (MoS{sub 2}) with larger surface area was proposed based on first-principle calculations. 3D layered MoS{sub 2} structure contains the basal surface and joint zone between the different nanoribbons, which is thermodynamically stable at room temperature, as confirmed by first principles molecular dynamics calculations. Compared the two-dimensional layered structures, the 3D MoS{sub 2} not only owns the large surface areas but also can effectively avoid the aggregation. Interestingly, although the basal surface remains the property of the intrinsic semiconductor as the bulk MoS{sub 2}, the joint zone of 3D MoS{sub 2} exhibits semimetallic, which is derived from degenerate 3d orbitals of the Mo atoms. The high stability, large surface area, and high conductivity make 3D MoS{sub 2} have great potentials as high performance catalyst.

  5. Polystyrene/MoS{sub 2}@oleylamine nanocomposites

    SciTech Connect (OSTI)

    Altavilla, Claudia; Ciambelli, Paolo; Fedi, Filippo; Sorrentino, Andrea; Iannace, Salvatore

    2014-05-15

    The effects of adding different concentrations of MoS{sub 2}@oleylamine nano particles on the thermal and mechanical properties of polystyrene (PS) nanocomposites have been investigated. X-ray diffraction and optical microscopy were used to characterize the morphology of the resulting nanocomposites. The thermal stability of the nanocomposites has been characterized by thermogravimetric analysis. It has been found that the MoS{sub 2}@oleylamine nanoparticles have a good compatibility with the PS matrix forming homogeneous dispersion even at high concentrations. The PS/MoS{sub 2}@oleylamine nanocomposites showed enhanced thermal stability in comparison with neat polystyrene.

  6. Slow Mo Guys and Cold Spray | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Slow Mo Guys and Cold Spray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Slow Mo Guys and Cold Spray ) The Slow Mo Guys came to GE Global Research in Niskayuna to film our researchers demonstrate a process called "cold spray", in which metal powders are sprayed at high velocities to build a part or add

  7. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  8. Diffusion Barrier Selection from Refractory Metals (Zr, Mo and Nb) via Interdiffusion Investigation for U-Mo RERTR Fuel Alloy

    SciTech Connect (OSTI)

    K. Huang; C. Kammerer; D. D. Keiser, Jr.; Y. H. Sohn

    2014-04-01

    U-Mo alloys are being developed as low enrichment monolithic fuel under the Reduced Enrichment for Research and Test Reactor (RERTR) Program. Diffusional interactions between the U-Mo fuel alloy and Al-alloy cladding within the monolithic fuel plate construct necessitate incorporation of a barrier layer. Fundamentally, a diffusion barrier candidate must have good thermal conductivity, high melting point, minimal metallurgical interaction, and good irradiation performance. Refractory metals, Zr, Mo, and Nb are considered based on their physical properties, and the diffusion behavior must be carefully examined first with U-Mo fuel alloy. Solid-to-solid U-10wt.%Mo vs. Mo, Zr, or Nb diffusion couples were assembled and annealed at 600, 700, 800, 900 and 1000 degrees C for various times. The interdiffusion microstructures and chemical composition were examined via scanning electron microscopy and electron probe microanalysis, respectively. For all three systems, the growth rate of interdiffusion zone were calculated at 1000, 900 and 800 degrees C under the assumption of parabolic growth, and calculated for lower temperature of 700, 600 and 500 degrees C according to Arrhenius relationship. The growth rate was determined to be about 10 3 times slower for Zr, 10 5 times slower for Mo and 10 6 times slower for Nb, than the growth rates reported for the interaction between the U-Mo fuel alloy and pure Al or Al-Si cladding alloys. Zr, however was selected as the barrier metal due to a concern for thermo- mechanical behavior of UMo/Nb interface observed from diffusion couples, and for ductile-to-brittle transition of Mo near room temperature.

  9. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  10. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  11. M.O. Wascko, LSU NuInt05...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    O. Wascko, LSU NuInt05 26 September, 2005 MiniBooNE CC + CCQE Ratio M.O. Wascko, LSU J.R. Monroe, Columbia CC interactions Quasi-Elastic (CCQE) Inclusive Single +...

  12. 9 Cr-- 1 Mo steel material for high temperature application

    DOE Patents [OSTI]

    Jablonski, Paul D; Alman, David; Dogan, Omer; Holcomb, Gordon; Cowen, Christopher

    2012-11-27

    One or more embodiments relates to a high-temperature, titanium alloyed, 9 Cr-1 Mo steel exhibiting improved creep strength and oxidation resistance at service temperatures up to 650.degree. C. The 9 Cr-1 Mo steel has a tempered martensite microstructure and is comprised of both large (0.5-3 .mu.m) primary titanium carbides and small (5-50 nm) secondary titanium carbides in a ratio of. from about 1:1.5 to about 1.5:1. The 9 Cr-1 Mo steel may be fabricated using exemplary austenizing, rapid cooling, and tempering steps without subsequent hot working requirements. The 9 Cr-1 Mo steel exhibits improvements in total mass gain, yield strength, and time-to-rupture over ASTM P91 and ASTM P92 at the temperature and time conditions examined.

  13. Structural Insights into FeMo Cofactor Biosynthesis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a catalytic component and a specific reductase, which, in the standard system, are referred to as the MoFe protein and the Fe protein. At the active site of the...

  14. CO2ReMoVe | Open Energy Information

    Open Energy Info (EERE)

    of industrial, research and service organizations with experience in CO2 geological storage. References: CO2ReMoVe1 This article is a stub. You can help OpenEI by expanding...

  15. Co-Mo Electric Cooperative- Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Co-Mo Electric Cooperative provides rebates to its residential and commercial members who install air source, dual fuel, and/or geothermal heat pumps, and certain energy efficient appliances. Heat...

  16. Support effects on hydrotreating activity of NiMo catalysts

    SciTech Connect (OSTI)

    Dominguez-Crespo, M.A. Arce-Estrada, E.M.; Torres-Huerta, A.M.

    2007-10-15

    The effect of the gamma alumina particle size on the catalytic activity of NiMoS{sub x} catalysts prepared by precipitation method of aluminum acetate at pH = 10 was studied. The structural characterization of the supports was measured by using XRD, pyridine FTIR-TPD and nitrogen physisorption. NiMo catalysts were characterized during the preparation steps (annealing and sulfidation) using transmission electron microscopy (TEM). Hydrogen TPR studies of the NiMo catalysts were also carried out in order to correlate their hydrogenating properties and their catalytic functionality. Catalytic tests were carried out in a pilot plant at 613, 633 and 653 K temperatures. The results showed that the rate constants of hydrodesulfurization (HDS), hydrodenitrogenation (HDN) and hydrodearomatizing (HDA) at 613-653 K decreased in the following order: A > B > C corresponding to the increase of NiMoS particle size associated to these catalysts.

  17. Ethanol Conversion on Cyclic (MO3)3 (M = Mo, W) Clusters

    SciTech Connect (OSTI)

    Li, Zhenjun; Fang, Zongtang; Kelley, Matthew S.; Kay, Bruce D.; Rousseau, Roger J.; Dohnalek, Zdenek; Dixon, David A.

    2014-03-06

    Oxides of molybdenum and tungsten are an important class of catalytic materials with applications ranging from isomerization of alkanes and alkenes, partial oxidation of alcohols, selective reduction of nitric oxide and metathesis of alkeness.[1-10] While many studies have focused on the structure - function relationships, the nature of high catalytic activity is still being extensively investigated. There is a general agreement that the activity of supported MOx (M = W, Mo) catalysts is correlated with the presence of acidic sites, where the catalytic activity is strongly affected by the type of oxide support, delocalization of electron density, structures of tungsten oxide domains and presence of protons

  18. Microstructures in rapidly solidified Ni-Mo alloys

    SciTech Connect (OSTI)

    Jayaraman, N.; Tewari, S.N.; Hemker, K.J.; Glasgow, T.K.

    1985-01-01

    Ni-Mo alloys of compositions ranging from pure Ni to Ni-40 at % Mo were rapidly solidified by chill block melt spinning in vacuum and were examined by optical metallography, x-ray diffraction and transmission electron microscopy. Rapid solidification resulted in an extension of molybdenum solubility in nickel from 28 to 37.5 at %. A number of different phases and microstructures were seen at different depths (solidification conditions) from the quenched surface of the melt spun ribbons.

  19. Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

    The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

  20. Health-hazard evaluation report HETA 86-469-2189, James River Corporation, Newnan, Georgia

    SciTech Connect (OSTI)

    Sinks, T.

    1992-03-01

    In response to a request from OSHA, a possible cancer cluster was investigated at the James River Corporation (SIC-2657), Newnan, Georgia. The paperboard packaging facility had been in operation for over 30 years. A retrospective cohort mortality study of 2050 workers employed at the facility between 1957 and 1988 was conducted. As of the study date, 141 workers were deceased, 1705 were alive, and 204 had been lost to follow-up. Overall mortality was similar to that expected as was mortality from diseases of the heart, accidents, and violence. The Standardized Mortality Ratios for all cancers was less than expected. Three workers with bladder cancer and six with kidney cancer were identified. No increased risk of bladder cancer was determined. The risk of kidney cancer was increased. The excess risk was associated with overall duration of employment but was not limited to any single department or work process. The author concludes that workers at the facility had an increased rate of kidney cancer. The author recommends measures to reduce exposures to inks containing pigments made from aromatic amines. Personal protective equipment should not be considered a substitute for adequate engineering controls. Follow-up on the cohort should continue.

  1. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact ...

  2. Multiconfiguration Dirac-Fock calculations on multi-valence-electron systems: Benchmarks on Ga-like ions

    SciTech Connect (OSTI)

    Hu Feng; Yang Jiamin; Wang Chuanke; Jing Longfei; Chen Shubo; Jiang Gang; Liu Hao; Hao Lianghuan

    2011-10-15

    High-accuracy calculations of term energies and wavelengths of resonance lines in Ga-like ions have been performed as benchmarks in the request for accurate treatments of relativity, electron correction, and QED effects in multi-valence-electron systems. The calculated energy levels are in excellent agreement with the experimental results and the experimentally compiled energy values of the National Institute for Standards and Technology wherever available. The calculated values including core-valence correction are found to be in good agreement with other theoretical and experimental values for low- to medium-Z ions. On the basis of our calculations, some theoretical wavelengths for Ga-like Rb vii to Mo xii are also given. For higher-Z ions, computed wavelengths are compared well with the experimental results [E. Traebert, J. Clementson, P. Beiersdorfer, J. A. Santana, and Y. Ishikawa, Phys. Rev. A 82, 062519 (2010), I. N Draganicet al., J. Phys. B 44, 025001 (2011)].

  3. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  4. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  5. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  6. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  7. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  8. Coated U(Mo) Fuel: As-Fabricated Microstructures

    SciTech Connect (OSTI)

    Emmanuel Perez; Dennis D. Keiser, Jr.; Ann Leenaers; Sven Van den Berghe; Tom Wiencek

    2014-04-01

    As part of the development of low-enriched uranium fuels, fuel plates have recently been tested in the BR-2 reactor as part of the SELENIUM experiment. These fuel plates contained fuel particles with either Si or ZrN thin film coating (up to 1 µm thickness) around the U-7Mo fuel particles. In order to best understand irradiation performance, it is important to determine the starting microstructure that can be observed in as-fabricated fuel plates. To this end, detailed microstructural characterization was performed on ZrN and Si-coated U-7Mo powder in samples taken from AA6061-clad fuel plates fabricated at 500°C. Of interest was the condition of the thin film coatings after fabrication at a relatively high temperature. Both scanning electron microscopy and transmission electron microscopy were employed. The ZrN thin film coating was observed to consist of columns comprised of very fine ZrN grains. Relatively large amounts of porosity could be found in some areas of the thin film, along with an enrichment of oxygen around each of the the ZrN columns. In the case of the pure Si thin film coating sample, a (U,Mo,Al,Si) interaction layer was observed around the U-7Mo particles. Apparently, the Si reacted with the U-7Mo and Al matrix during fuel plate fabrication at 500°C to form this layer. The microstructure of the formed layer is very similar to those that form in U-7Mo versus Al-Si alloy diffusion couples annealed at higher temperatures and as-fabricated U-7Mo dispersion fuel plates with Al-Si alloy matrix fabricated at 500°C.

  9. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  10. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  11. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  12. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PDF icon 2015 BTO Peer Review Presentation - Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture More Documents & ...

  13. Structural Model of the Basement in the Central Savannah River Area, South Carolina and Georgia

    SciTech Connect (OSTI)

    Stephenson, D. [Westinghouse Savannah River Company, AIKEN, SC (United States); Stieve, A.

    1992-03-01

    Interpretation of several generations of seismic reflection data and potential field data suggests the presence of several crustal blocks within the basement beneath the Coastal Plain in the Central Savannah River Area (CSRA). The seismic reflection and refraction data include a grid of profiles that capture shallow and deep reflection events and traverse the Savannah River Site and vicinity. Potential field data includes aeromagnetic, ground magnetic surveys, reconnaissance and detailed gravity surveys. Subsurface data from recovered core are used to constrain the model.Interpretation of these data characteristically indicate a southeast dipping basement surface with some minor highs and lows suggesting an erosional pre-Cretaceous unconformity. This surface is interrupted by several basement faults, most of which offset only early Cretaceous sedimentary horizons overlying the erosional surface. The oldest fault is perhaps late Paleozoic because it is truncated at the basement/Coastal Plain interface. This fault is related in timing and mechanism to the underlying Augusta fault. The youngest faults deform Coastal Plain sediments of at least Priabonian age (40-36.6 Ma). One of these young faults is the Pen Branch faults, identified as the southeast dipping master fault for the Triassic Dunbarton basin. All the Cenozoic faults are probably related in time and mechanism to the nearby, well studied Belair fault.The study area thus contains a set of structures evolved from the Alleghanian orogeny through Mesozoic extension to Cenozoic readjustment of the crust. There is a metamorphosed crystalline terrane with several reflector/fault packages, a reactivated Triassic basin, a mafic terrane separating the Dunbarton basin from the large South Georgia basin to the southeast, and an overprint of reverse faults, some reactivated, and some newly formed.

  14. ,"Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)",1,"Monthly","2/2016" ,"Release Date:","4/29/2016" ,"Next Release

  15. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  16. Economic Benefits, Carbon Dioxide (CO2) Emissions Reduction, and Water Conservation Benefits from 1,000 Megawatts (MW) of New Wind Power in Georgia (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2008-06-01

    The U.S. Department of Energy's Wind Powering America Program is committed to educating state-level policy makers and other stakeholders about the economic, CO2 emissions, and water conservation impacts of wind power. This analysis highlights the expected impacts of 1000 MW of wind power in Georgia. We forecast the cumulative economic benefits from 1000 MW of development in Georgia to be $2.1 billion, annual CO2 reductions are estimated at 3.0 million tons, and annual water savings are 1,628 million gallons.

  17. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  18. Ligand Bridging-Angle-Driven Assembly of Molecular Architectures Based on Quadruply Bonded Mo-Mo Dimers

    SciTech Connect (OSTI)

    Li, Jian-Rong; Yakovenko, Andrey A; Lu, Weigang; Timmons, Daren J; Zhuang, Wenjuan; Yuan, Daqiang; Zhou, Hong-Cai

    2010-12-15

    A systematic exploration of the assembly of Mo?(O?C-)?-based metalorganic molecular architectures structurally controlled by the bridging angles of rigid organic linkers has been performed. Twelve bridging dicarboxylate ligands were designed to be of different sizes with bridging angles of 0, 60, 90, and 120 while incorporating a variety of nonbridging functional groups, and these ligands were used as linkers. These dicarboxylate linkers assemble with quadruply bonded MoMo clusters acting as nodes to give 13 molecular architectures, termed metalorganic polygons/polyhedra with metal cluster node arrangements of a linear shape, triangle, octahedron, and cuboctahedron/anti-cuboctahedron. The syntheses of these complexes have been optimized and their structures determined by single-crystal X-ray diffraction. The results have shown that the shape and size of the resulting molecular architecture can be controlled by tuning the bridging angle and size of the linker, respectively. Functionalization of the linker can adjust the solubility of the ensuing molecular assembly but has little or no effect on the geometry of the product. Preliminary gas adsorption, spectroscopic, and electrochemical properties of selected members were also studied. The present work is trying to enrich metal-containing supramolecular chemistry through the inclusion of well-characterized quadruply bonded MoMo units into the structures, which can widen the prospect of additional electronic functionality, thereby leading to novel properties.

  19. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  20. U-Mo Plate Blister Anneal Interim Report

    SciTech Connect (OSTI)

    Francine J. Rice; Daniel M. Wachs; Adam B. Robinson; Dennis D. Keiser Jr.; Jan-Fong Jue; Danielle M. Perez; Ross Finlay

    2010-10-01

    Blister thresholds in fuel elements have been a longstanding performance parameter for fuel elements of all types. This behavior has yet to be fully defined for the RERTR U-Mo fuel types. Blister anneal studies that began in 2007 have been expanded to include plates from more recent RERTR experiments. Preliminary data presented in this report encompasses the early generations of the U-Mo fuel systems and the most recent but still developing fuel system. Included is an overview of relevant dispersion fuel systems for the purposes of comparison.

  1. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  2. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  3. Transportation of foreign-owned enriched uranium from the Republic of Georgia. Environmental assessment for Project Partnership

    SciTech Connect (OSTI)

    1998-03-31

    The Department of Energy (DOE) Office of Nonproliferation and National Security (NN) has prepared a classified environmental assessment to evaluate the potential environmental impact for the transportation of 5.26 kilograms of enriched uranium-235 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom. The nuclear fuel consists of primarily fresh fuel, but also consists of a small quantity (less than 1 kilogram) of partially-spent fuel. Transportation of the enriched uranium fuel would occur via US Air Force military aircraft under the control of the Defense Department European Command (EUCOM). Actions taken in a sovereign nation (such as the Republic of Georgia and the United Kingdom) are not subject to analysis in the environmental assessment. However, because the action would involve the global commons of the Black Sea and the North Sea, the potential impact to the global commons has been analyzed. Because of the similarities in the two actions, the Project Sapphire Environmental Assessment was used as a basis for assessing the potential impacts of Project Partnership. However, because Project Partnership involves a small quantity of partially-spent fuel, additional analysis was conducted to assess the potential environmental impacts and to consider reasonable alternatives as required by NEPA. The Project Partnership Environmental Assessment found the potential environmental impacts to be well below those from Project Sapphire.

  4. CuAl{sub x}Ga{sub 1?x}Se{sub 2} thin films for photovoltaic applications: Optical and compositional analysis

    SciTech Connect (OSTI)

    Lpez-Garca, J.; Maffiotte, C.; Guilln, C.; Herrero, J.

    2013-03-15

    Highlights: ? Wide band gap CAGS thin films have been obtained by selenization of evaporated metallic precursors. ? Direct nonlinear dependence of the band gap energy with the Al/(Al + Ga) ratio is found. ? The bowing parameter decreases when the CAGS film thickness increases. ? The Cu at% remains constant in depth, together with some Al, Ga and Se gradients. ? Surface is strongly oxidized but the oxidation is relatively low in bulk. - Abstract: Wide-band gap chalcopyrite semiconductors have a great interest due to their potential application in multi-junction thin film solar cells or as window layers. Polycrystalline CuAl{sub x}Ga{sub 1?x}Se{sub 2} (CAGS) thin films have been prepared by selenization of evaporated metallic precursor layers on bare and Mo-coated soda lime glass substrates. The optical properties of CAGS films of 2 thicknesses have been analyzed by spectrophotometry in the visible-infrared (VIS-IR) and the compositional characteristics have been studied by energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy (XPS). The optical transmission increases and the band gap energy shifts toward higher values as the Al content increases, which indicates the partial substitution of Ga by Al. The dependence of the band gap with the composition has resulted to be nonlinear and a bowing parameter of b = 0.62 and b = 0.54 for 0.6 ?m and 1.1 ?m-CAGS samples, respectively, has been obtained. XPS data have shown an Al, Ga and Se composition gradient in depth and a surface strongly oxidized. However, XPS reveals that the Cu composition remains constant in depth and the oxidation is relatively low in bulk increasing slightly in the interface with Mo/SLG. Moreover, samples with high Al content reveal a higher contribution of CuO in depth.

  5. Policy Flash 2013-71 AL 2013-11 NON M&O CONTRACTOR BUSINESS SYSTEMS...

    Energy Savers [EERE]

    Policy Flash 2013-71 AL 2013-11 NON M&O CONTRACTOR BUSINESS SYSTEMS CLAUSES FOR SECTION H Policy Flash 2013-71 AL 2013-11 NON M&O CONTRACTOR BUSINESS SYSTEMS CLAUSES FOR SECTION H...

  6. Corrosion report for the U-Mo fuel concept

    SciTech Connect (OSTI)

    Henager, Jr., Charles H.; Bennett, Wendy D.; Doherty, Ann L.; Fuller, E. S.; Hardy, John S.; Omberg, Ronald P.

    2014-08-28

    The Fuel Cycle Research and Development (FCRD) program of the Office of Nuclear Energy (NE) has implemented a program to develop a Uranium-Molybdenum (U-Mo) metal fuel for Light Water Reactors (LWR)s. Uranium-Molybdenum fuel has the potential to provide superior performance based on its thermo-physical properties, which includes high thermal conductivity for less stored heat energy. With sufficient development, it may be able to provide the Light Water industry with a melt-resistant accident tolerant fuel with improved safety response. However, the corrosion of this fuel in reactor water environments needs to be further explored and optimized by additional alloying. The Pacific Northwest National Laboratory has been tasked with performing ex-reactor corrosion testing to characterize the performance of U-Mo fuel. This report documents the results of the effort to characterize and develop the U-Mo metal fuel concept for LWRs with regard to corrosion testing. The results of a simple screening test in buffered water at 30°C using surface alloyed U-10Mo is documented and discussed. The screening test was used to guide the selection of several potential alloy improvements that were found and are recommended for further testing in autoclaves to simulate PWR water conditions more closely.

  7. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  8. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  9. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  10. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  11. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  12. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  13. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  14. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  15. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  16. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  17. Tuning magnetism of monolayer MoS{sub 2} by doping vacancy and applying strain

    SciTech Connect (OSTI)

    Zheng, Huiling; Yang, Baishun; Han, Ruilin; Du, Xiaobo; Yan, Yu; Wang, Dingdi

    2014-03-31

    In view of important role of inducing and manipulating the magnetism in two-dimensional materials for the development of low-dimensional spintronic devices, the influences of strain on electronic structure and magnetic properties of commonly observed vacancies doped monolayer MoS{sub 2} are investigated using first-principles calculations. It is shown that unstrained V{sub S}, V{sub S2}, and V{sub MoS3} doped monolayer MoS{sub 2} systems are nonmagnetic, while the ground state of unstrained V{sub MoS6} doped system is magnetic and the magnetic moment is contributed mainly by six Mo atoms around V{sub MoS6}. In particular, tensile strain can induce magnetic moments in V{sub S}, V{sub S2}, and V{sub MoS3} doped monolayer MoS{sub 2} due to the breaking of Mo–Mo metallic bonds around the vacancies, while the magnetization induced by V{sub MoS6} can be effectively manipulated by equibiaxial strain due to the change of Mo–Mo metallic bonds around V{sub MoS6} under strains.

  18. Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ye, Gonglan; Gong, Yongji; Lin, Junhao; Li, Bo; He, Yongmin; Pantelides, Sokrates T.; Zhou, Wu; Vajtai, Robert; Ajayan, Pulickel M.

    2016-01-13

    MoS2 is a promising, low-cost material for electrochemical hydrogen production due to its high activity and stability during the reaction. Our work represents an easy method to increase the hydrogen production in electrochemical reaction of MoS2 via defect engineering, and helps to understand the catalytic properties of MoS2.

  19. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  20. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  1. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  2. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  3. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  4. DOE Selects Projects to Advance Technologies for the Co-Production...

    Energy Savers [EERE]

    ... Georgia Institute of Technology (Atlanta, Ga.)--Georgia Tech will team with the National Renewable Energy Laboratory in Golden, Colo., to obtain experimental reactor data and ...

  5. Lakes_Elec_You

    Office of Environmental Management (EM)

    ... Florida Jim Woodruff Preference Customers 115 Lincoln Drive Chattahoochee, FL 32324 850663-4475 Georgia Municipal Electric Authority of Georgia Atlanta, GA 30328-4640 770952-5445 ...

  6. Energy Department Advances Research on Methane Hydrates - the...

    Energy Savers [EERE]

    ... Energy Department Investment: 225,000Duration: 12 months Georgia Tech Research Corporation (Atlanta, Ga.) -- The research to be conducted by Georgia Tech will advance the ...

  7. SREL Reprint #3172

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802,...

  8. SREL Reprint #3120

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802,...

  9. Structure and electronic properties of Cu nanoclusters supported on Mo2C(001) and MoC(001) surfaces

    SciTech Connect (OSTI)

    Posada-Pérez, Sergio; Viñes, Francesc; Rodríguez, José A.; Illas, Francesc

    2015-09-15

    In this study, the atomic structure and electronic properties of Cun nanoclusters (n = 4, 6, 7, and 10) supported on cubic nonpolar δ-MoC(001) and orthorhombic C- or Mo-terminated polar β-Mo2C(001) surfaces have been investigated by means of periodic density functional theory based calculations. The electronic properties have been analyzed by means of the density of states, Bader charges, and electron localization function plots. The Cu nanoparticles supported on β-Mo2C(001), either Mo- or C-terminated, tend to present a two-dimensional structure whereas a three-dimensional geometry is preferred when supported on δ-MoC(001), indicating that the Mo:C ratio and the surface polarity play a key role determining the structure of supported clusters. Nevertheless, calculations also reveal important differences between the C- and Mo-terminated β-Mo2C(001) supports to the point that supported Cu particles exhibit different charge states, which opens a way to control the reactivity of these potential catalysts.

  10. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  11. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  12. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  13. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  14. Thermal transport properties of metal/MoS{sub 2} interfaces from first principles

    SciTech Connect (OSTI)

    Mao, Rui; Kong, Byoung Don; Kim, Ki Wook, E-mail: kwk@ncsu.edu [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911 (United States)

    2014-07-21

    Thermal transport properties at the metal/MoS{sub 2} interfaces are analyzed by using an atomistic phonon transport model based on the Landauer formalism and first-principles calculations. The considered structures include chemisorbed Sc(0001)/MoS{sub 2} and Ru(0001)/MoS{sub 2}, physisorbed Au(111)/MoS{sub 2}, as well as Pd(111)/MoS{sub 2} with intermediate characteristics. Calculated results illustrate a distinctive dependence of thermal transfer on the details of interfacial microstructures. More specifically, the chemisorbed case with a stronger bonding exhibits a generally smaller interfacial thermal resistance than the physisorbed. Comparison between metal/MoS{sub 2} and metal/graphene systems suggests that metal/MoS{sub 2} is significantly more resistive. Further examination of lattice dynamics identifies the presence of multiple distinct atomic planes and bonding patterns at the interface as the key origins of the observed large thermal resistance.

  15. Development of uranium metal targets for {sup 99}Mo production

    SciTech Connect (OSTI)

    Wiencek, T.C.; Hofman, G.L.

    1993-10-01

    A substantial amount of high enriched uranium (HEU) is used for the production of medical-grade {sup 99}Mo. Promising methods of producing irradiation targets are being developed and may lead to the reduction or elimination of this HEU use. To substitute low enriched uranium (LEU) for HEU in the production of {sup 99}Mo, the target material may be changed to uranium metal foil. Methods of fabrication are being developed to simplify assembly and disassembly of the targets. Removal of the uranium foil after irradiation without dissolution of the cladding is a primary goal in order to reduce the amount of liquid radioactive waste material produced in the process. Proof-of-concept targets have been fabricated. Destructive testing indicates that acceptable contact between the uranium foil and the cladding can be achieved. Thermal annealing tests, which simulate the cladding/uranium diffusion conditions during irradiation, are underway. Plans are being made to irradiate test targets.

  16. Undercooled and rapidly quenched Ni-Mo alloys

    SciTech Connect (OSTI)

    Tewari, S.N.; Glasgow, T.K.

    1986-01-01

    Hypoeutectic, eutectic, and hypereutectic nickel-molybdenum alloys were rapidly solidified by both bulk undercooling and melt spinning techniques. Alloys were undercooled in both electromagnetic levitation and differential thermal analysis equipment. The rate of recalescence depended upon the degree of initial undercooling and the nature (faceted or nonfaceted) of the primary nucleating phase. Alloy melts were observed to undercool more in the presence of primary Beta (NiMo intermetallic) phase than in gamma (fcc solid solution) phase. Melt spinning resulted in an extension of molybdenum solid solubility in gamma nickel, from 28 to 37.5 at % Mo. Although the microstructures observed by undercooling and melt spinning were similar the microsegregation pattern across the gamma dendries was different. The range of microstructures evolved was analyzed in terms of the nature of the primary phase to nucleate, its subsequent dendritic growth, coarsening and fragmentation, and final solidification of interfenderitic liquid.

  17. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  18. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  19. IRRADIATION PERFORMANCE OF U-Mo MONOLITHIC FUEL

    SciTech Connect (OSTI)

    M.K. Meyer; J. Gan; J.-F. Jue; D.D. Keiser; E. Perez; A. Robinson; D.M. Wachs; N. Woolstenhulme; G.L. Hofman; Y.-S. Kim

    2014-04-01

    High-performance research reactors require fuel that operates at high specific power to high fission density, but at relatively low temperatures. Research reactor fuels are designed for efficient heat rejection, and are composed of assemblies of thin-plates clad in aluminum alloy. The development of low-enriched fuels to replace high-enriched fuels for these reactors requires a substantially increased uranium density in the fuel to offset the decrease in enrichment. Very few fuel phases have been identified that have the required combination of very-high uranium density and stable fuel behavior at high burnup. UMo alloys represent the best known tradeoff in these properties. Testing of aluminum matrix U-Mo aluminum matrix dispersion fuel revealed a pattern of breakaway swelling behavior at intermediate burnup, related to the formation of a molybdenum stabilized high aluminum intermetallic phase that forms during irradiation. In the case of monolithic fuel, this issue was addressed by eliminating, as much as possible, the interfacial area between U-Mo and aluminum. Based on scoping irradiation test data, a fuel plate system composed of solid U-10Mo fuel meat, a zirconium diffusion barrier, and Al6061 cladding was selected for development. Developmental testing of this fuel system indicates that it meets core criteria for fuel qualification, including stable and predictable swelling behavior, mechanical integrity to high burnup, and geometric stability. In addition, the fuel exhibits robust behavior during power-cooling mismatch events under irradiation at high power.

  20. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  1. Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA

    Broader source: Energy.gov [DOE]

    On July 9, the U.S. Department of Energy will be holding the Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit at the Renaissance Atlanta Midtown Hotel in Atlanta, Georgia.

  2. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  3. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  4. Single Phase Melt Processed Powellite (Ba,Ca) MoO{sub 4} For The Immobilization Of Mo-Rich Nuclear Waste

    SciTech Connect (OSTI)

    Brinkman, Kyle; Marra, James; Fox, Kevin; Reppert, Jason; Crum, Jarrod; Tang, Ming

    2012-09-17

    Crystalline and glass composite materials are currently being investigated for the immobilization of combined High Level Waste (HLW) streams resulting from potential commercial fuel reprocessing scenarios. Several of these potential waste streams contain elevated levels of transition metal elements such as molybdenum (Mo). Molybdenum has limited solubility in typical silicate glasses used for nuclear waste immobilization. Under certain chemical and controlled cooling conditions, a powellite (Ba,Ca)MoO{sub 4} crystalline structure can be formed by reaction with alkaline earth elements. In this study, single phase BaMoO{sub 4} and CaMoO{sub 4} were formed from carbonate and oxide precursors demonstrating the viability of Mo incorporation into glass, crystalline or glass composite materials by a melt and crystallization process. X-ray diffraction, photoluminescence, and Raman spectroscopy indicated a long range ordered crystalline structure. In-situ electron irradiation studies indicated that both CaMoO{sub 4} and BaMoO{sub 4} powellite phases exhibit radiation stability up to 1000 years at anticipated doses with a crystalline to amorphous transition observed after 1 X 10{sup 13} Gy. Aqueous durability determined from product consistency tests (PCT) showed low normalized release rates for Ba, Ca, and Mo (<0.05 g/m{sup 2}).

  5. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  6. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  7. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  8. The design, construction, and monitoring of photovoltaic power system and solar thermal system on the Georgia Institute of Technology Aquatic Center. Volume 1

    SciTech Connect (OSTI)

    Long, R.C.

    1996-12-31

    This is a report on the feasibility study, design, and construction of a PV and solar thermal system for the Georgia Tech Aquatic Center. The topics of the report include a discussion of site selection and system selection, funding, design alternatives, PV module selection, final design, and project costs. Included are appendices describing the solar thermal system, the SAC entrance canopy PV mockup, and the PV feasibility study.

  9. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  10. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  11. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  12. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  13. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  14. Rapid microwave hydrothermal synthesis of ZnGa{sub 2}O{sub 4} with high photocatalytic activity toward aromatic compounds in air and dyes in liquid water

    SciTech Connect (OSTI)

    Sun Meng; Li Danzhen; Zhang Wenjuan; Chen Zhixin; Huang Hanjie; Li Wenjuan; He Yunhui; Fu Xianzhi

    2012-06-15

    ZnGa{sub 2}O{sub 4} was synthesized from Ga(NO{sub 3}){sub 3} and ZnCl{sub 2} via a rapid and facile microwave-assisted hydrothermal method. The photocatalytic properties of the as-prepared ZnGa{sub 2}O{sub 4} were evaluated by the degradation of pollutants in air and aqueous solution under ultraviolet (UV) light illumination. The results demonstrated that ZnGa{sub 2}O{sub 4} had exhibited efficient photocatalytic activities higher than that of commercial P25 (Degussa Co.) in the degradation of benzene, toluene, and ethylbenzene, respectively. In the liquid phase degradation of dyes (methyl orange, Rhodamine B, and methylene blue), ZnGa{sub 2}O{sub 4} has also exhibited remarkable activities higher than that of P25. After 32 min of UV light irradiation, the decomposition ratio of methyl orange (10 ppm, 150 mL) over ZnGa{sub 2}O{sub 4} (0.06 g) was up to 99%. The TOC tests revealed that the mineralization ratio of MO (10 ppm, 150 mL) was 88.1% after 90 min of reaction. A possible mechanism of the photocatalysis over ZnGa{sub 2}O{sub 4} was also proposed. - Graphical abstract: In the degradation of RhB under UV light irradiation, ZnGa{sub 2}O{sub 4} had exhibited efficient photo-activity, and after only 24 min of irradiation the decomposition ratio was up to 99.8%. Highlights: Black-Right-Pointing-Pointer A rapid and facile M-H method to synthesize ZnGa{sub 2}O{sub 4} photocatalyst. Black-Right-Pointing-Pointer The photocatalyst exhibits high activity toward benzene and dyes. Black-Right-Pointing-Pointer The catalyst possesses more surface hydroxyl sites than TiO{sub 2} (P25). Black-Right-Pointing-Pointer Deep oxidation of different aromatic compounds and dyes over catalyst.

  15. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  16. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  17. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  18. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  19. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  20. Bonding between graphene and MoS{sub 2} monolayers without and with Li

    Office of Scientific and Technical Information (OSTI)

    intercalation (Journal Article) | SciTech Connect Journal Article: Bonding between graphene and MoS{sub 2} monolayers without and with Li intercalation Citation Details In-Document Search Title: Bonding between graphene and MoS{sub 2} monolayers without and with Li intercalation We performed density functional theory (DFT) calculations for a bi-layered heterostructure combining a graphene layer with a MoS{sub 2} layer with and without intercalated Li atoms. Our calculations demonstrate the

  1. Characterization of modified 9 Cr-1 Mo steel extruded pipe

    SciTech Connect (OSTI)

    Sikka, V.K.; Hart, M.D.

    1985-04-01

    The fabrication of hot-extruded pipe of modified 9 Cr-1 Mo steel at Cameron Iron Works is described. The report also deals with the tempering response; tensile, Charpy impact, and creep properties; and microstructure of the hot-extruded pipe. The tensile properties of the pipe are compared with the average and average -1.65 standard error of estimate curves for various product forms of several commercial heats of this alloy. The creep-rupture properties are compared with the average curve for various product forms of the commercial heats.

  2. Recovery of Mo/Si multilayer coated optical substrates

    DOE Patents [OSTI]

    Baker, S.L.; Vernon, S.P.; Stearns, D.G.

    1997-12-16

    Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO{sub 2} overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates. 5 figs.

  3. Recovery of Mo/Si multilayer coated optical substrates

    DOE Patents [OSTI]

    Baker, Sherry L.; Vernon, Stephen P.; Stearns, Daniel G.

    1997-12-16

    Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO.sub.2 overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.

  4. Greenfield Alternative Study LEU-Mo Fuel Fabrication Facility

    SciTech Connect (OSTI)

    Washington Division of URS

    2008-07-01

    This report provides the initial “first look” of the design of the Greenfield Alternative of the Fuel Fabrication Capability (FFC); a facility to be built at a Greenfield DOE National Laboratory site. The FFC is designed to fabricate LEU-Mo monolithic fuel for the 5 US High Performance Research Reactors (HPRRs). This report provides a pre-conceptual design of the site, facility, process and equipment systems of the FFC; along with a preliminary hazards evaluation, risk assessment as well as the ROM cost and schedule estimate.

  5. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  6. Synthesis of molybdenum disulfide (MoS{sub 2}) for lithium ion battery applications

    SciTech Connect (OSTI)

    Feng Chuanqi; Ma Jun; Li Hua; Zeng Rong; Guo Zaiping; Liu Huakun

    2009-09-15

    This paper reports the use of a rheological phase reaction method for preparing MoS{sub 2} nanoflakes. The characterization by powder X-ray diffraction indicated that MoS{sub 2} had been formed. High resolution electron microscopy observation revealed that the as-prepared MoS{sub 2} nanoflakes had started to curve and partly form MoS{sub 2} nanotubes. The lithium intercalation/de-intercalation behavior of as-prepared MoS{sub 2} nanoflake electrode was also investigated. It was found that the MoS{sub 2} nanoflake electrode exhibited higher specific capacity, with very high cycling stability, compared to MoS{sub 2} nanoparticle electrode. The possible reasons for the high electrochemical performance of the nanoflakes electrodes are also discussed. The outstanding electrochemical properties of MoS{sub 2} nanoflakes obtained by this method make it possible for MoS{sub 2} to be used as a promising anode material.

  7. Solution-based thermodynamic modeling of the Ni-Al-Mo system using

    Office of Scientific and Technical Information (OSTI)

    first-principles calculations (Journal Article) | SciTech Connect Solution-based thermodynamic modeling of the Ni-Al-Mo system using first-principles calculations Citation Details In-Document Search Title: Solution-based thermodynamic modeling of the Ni-Al-Mo system using first-principles calculations A solution-based thermodynamic description of the ternary Ni-Al-Mo system is developed here, incorporating first-principles calculations and reported modeling of the binary Ni-Al, Ni-Mo and

  8. Improving Accident Tolerance of Nuclear Fuel with Coated Mo-alloy...

    Office of Scientific and Technical Information (OSTI)

    Improving Accident Tolerance of Nuclear Fuel with Coated Mo-alloy Cladding Citation Details In-Document Search Title: Improving Accident Tolerance of Nuclear Fuel with Coated ...

  9. Experimental activities supporting commercial U.S. accelerator production of 99-Mo

    SciTech Connect (OSTI)

    Dale, Gregory E [Los Alamos National Laboratory; Chemerisov, Sergey D [ANL; Vandegrift, George F [ANL

    2010-01-01

    {sup 99m}Tc, the daughter product of {sup 99}Mo, is the most commonly used radioisotope for nuclear medicine in the U.S. Experiments are being performed at Los Alamos National Laboratory and Argonne National Laboratory to demonstrate production of {sup 99}Mo using accelerators. The {sup 100}Mo({gamma},n){sup 99}Mo reaction in an enriched {sup 100}Mo target is currently under investigation. Three scaled low-power production experiments using a 20-MeV electron linac at Argonne have been performed to date. Two of these experiments used natural Mo targets and produced a total of 613 {mu}C of {sup 99}Mo. The third experiment used an enriched {sup 100}Mo target and produced 10.5 mCi of {sup 99}Mo. Following irradiation the targets were dissolved and the low specific activity solution was processed through an ARSII generator from NorthStar Medical Radioisotopes. Yields of {sup 99m}Tc >95% have been observed.

  10. Conceptual design of a new homogeneous reactor for medical radioisotope Mo-99/Tc-99m production

    SciTech Connect (OSTI)

    Liem, Peng Hong [Nippon Advanced Information Service (NAIS Co., Inc.) Scientific Computational Division, 416 Muramatsu, Tokaimura, Ibaraki (Japan); Tran, Hoai Nam [Chalmers University of Technology, Dept. of Applied Physics, Div. of Nuclear Engineering, SE-412 96 Gothenburg (Sweden); Sembiring, Tagor Malem [National Nuclear Energy Agency (BATAN), Center for Reactor Technology and Nuclear Safety, Kawasan Puspiptek, Serpong, Tangerang Selatan, Banten (Indonesia); Arbie, Bakri [PT MOTAB Technology, Kedoya Elok Plaza Blok DA 12, Jl. Panjang, Kebun Jeruk, Jakarta Barat (Indonesia)

    2014-09-30

    To partly solve the global and regional shortages of Mo-99 supply, a conceptual design of a nitrate-fuel-solution based homogeneous reactor dedicated for Mo-99/Tc-99m medical radioisotope production is proposed. The modified LEU Cintichem process for Mo-99 extraction which has been licensed and demonstrated commercially for decades by BATAN is taken into account as a key design consideration. The design characteristics and main parameters are identified and the advantageous aspects are shown by comparing with the BATAN's existing Mo-99 supply chain which uses a heterogeneous reactor (RSG GAS multipurpose reactor)

  11. Microsoft Word - chapter FeNiCrMo_ver4.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Low-Alloy Ferritic Steels Fe-Ni-Cr-Mo Tempered December 8, ... strength level, material processing, and heat treatment 1. ... steel composition, hydrogen gas pressure, and temperature. ...

  12. Domestic production of medical isotope Mo-99 moves a step closer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    partners, including Morgridge Institute for Research-SHINE Medical Technologies (MIR-SHINE), which proposes to use a particle accelerator to produce Mo-99 from a mildly...

  13. Acquisition Guide Chapter 7.3:Acquisition Planning in the M&O Environment

    Broader source: Energy.gov [DOE]

    Acquisition Letter 2013-03, Acquisition Planning Considerations for M&O Contracts, has been moved to the Acquisition Guide as chapter (7.3).

  14. Mechanically Activated Combustion Synthesis of MoSi2-Based Composites

    SciTech Connect (OSTI)

    Shafirovich, Evgeny

    2015-09-30

    The thermal efficiency of gas-turbine power plants could be dramatically increased by the development of new structural materials based on molybdenum silicides and borosilicides, which can operate at temperatures higher than 1300 °C with no need for cooling. A major challenge, however, is to simultaneously achieve high oxidation resistance and acceptable mechanical properties at high temperatures. One approach is based on the fabrication of MoSi2-Mo5Si3 composites that combine high oxidation resistance of MoSi2 and good mechanical properties of Mo5Si3. Another approach involves the addition of boron to Mo-rich silicides for improving their oxidation resistance through the formation of a borosilicate surface layer. In particular, materials based on Mo5SiB2 phase are promising materials that offer favorable combinations of high temperature mechanical properties and oxidation resistance. However, the synthesis of Mo-Si-B multi-phase alloys is difficult because of their extremely high melting temperatures. Mechanical alloying has been considered as a promising method, but it requires long milling times, leading to large energy consumption and contamination of the product by grinding media. In the reported work, MoSi2-Mo5Si3 composites and several materials based on Mo5SiB2 phase have been obtained by mechanically activated self-propagating high-temperature synthesis (MASHS). Short-term milling of Mo/Si mixture in a planetary mill has enabled a self-sustained propagation of the combustion front over the mixture pellet, leading to the formation of MoSi2-T1 composites. Combustion of Mo/Si/B mixtures for the formation of T2 phase becomes possible if the composition is designed for the addition of more exothermic reactions leading to the formation of MoB, TiC, or TiB2. Upon ignition, Mo/Si/B and Mo/Si/B/Ti mixtures exhibited spin combustion, but the products were porous, contained undesired secondary phases, and had low oxidation resistance. It has been shown that use of SHS compaction (quasi-isostatic pressing after combustion) significantly improves oxidation resistance of the obtained MoSi2-Mo5Si3 composites. The “chemical oven” technique has been successfully employed to fabricate low-porous Mo5SiB2–TiC, Mo5SiB2–TiB2, and Mo–Mo5SiB2–Mo3Si materials. Among them, Mo5SiB2–TiB2 material possesses good mechanical properties and simultaneously exhibits excellent oxidation resistance at temperatures up to 1500 °C.

  15. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  16. In-111 chelate conjugates of human transferrin (HTr) and mouse monoclonal anti human transferrin receptor antibody (. cap alpha. HTrR MoAb) for tumor imaging

    SciTech Connect (OSTI)

    Goodwin, D.A.; Meares, C.F.; Diamanti, C.I.; McCall, M.; McTigue, M.; Torti, F.; Martin, B.

    1984-01-01

    At least one of the major pathways of uptake of the commonly used tumor scanning agent Ga-67 is via the transferrin receptor. This suggested the use of stably radio-labeled HTr, and ..cap alpha..HTrR MoAb for tumor imaging in humans. HTr and mouse ..cap alpha..HTrR MoAb were alkylated with 1-(parabromacetamidobenzyl)-EDTA. The mM Alkylproteins, approx. =1 chelate/molecule were labeled with 1-3 mCi In-111 citrate pH/sub 5/ (Sp Act approx. = 100-300 Ci/m mole). Images were made 24 hours after 1 mCi IV and in some patients blood levels, urine excretion and digitized whole body scans were obtained at 1, 24,48 and 96 hours post injection. Ten patients with biopsy proven prostate cancer were studied with In-111 HTr, and four with In-111 ..cap alpha.. HTrR MoAb; all had positive mets on bone scan. In-111 HTr persisted in the circulation with a T1/2 of approx. = four days, approx. = 5%/day being excreted in the urine, to a total of approx. = 60% in 21 days. Nine of ten scans were false negative due to the high blood background. In-111 ..cap alpha..HTrR disappeared rapidly from the blood; with most in the bone marrow at 24 hours. ROI analysis of three patients showed whole body 94% at 24 hours, 89% at 48 hours, and 82% at 96 hours (T1/2 = 10.7 days); liver 19% at 1 hour, 25% at 24 hours, and 21% at 96 hours; spleen 3% at 1 hour, 8% at 24 hours, 7.3% at 48 hours, and 3% at 96 hours. The high bone marrow background allowed only a few of the bone mets seen as bone scan to be visualized. Other tumor types not located in bone may be more easily seen.

  17. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  18. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  19. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  20. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  1. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  2. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  3. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  4. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  5. Health assessment for Cedartown Industries, Cedartown, Polk County, Georgia, Region 4. CERCLIS No. GAD95840674. Preliminary report

    SciTech Connect (OSTI)

    Not Available

    1990-01-29

    The Cedartown Industries, Inc. site has been proposed for the National Priorities List (NPL) by the U.S. Environmental Protection Agency (EPA). The 7-acre site is located in Cedartown, Polk County, Georgia, in the northwest part of the State. In 1986, one sediment sample from an on-site impoundment and two soil samples (one background) were collected on-site and analyzed by EPD. Only Extraction Procedure (EP) Toxicity testing was performed on these samples. The test which measures the concentration of leachate generated from the soil showed leachate with lead concentrations up to 720 parts per million (ppm) and cadmium concentrations up to 1.4 ppm. Based on the information reviewed, ATSDR has concluded that the site is of potential public health concern because humans may be exposed to hazardous substances at concentrations that may result in adverse health effects. As noted in the Human Exposure Pathways Section above, human exposure to lead may occur via ingestion of, inhalation of, and dermal contact with surface water, sediments, soils, ground water, air, and food-chain entities.

  6. Characterization of U-Mo Foils for AFIP-7

    SciTech Connect (OSTI)

    Edwards, Danny J.; Ermi, Ruby M.; Schemer-Kohrn, Alan L.; Overman, Nicole R.; Henager, Charles H.; Burkes, Douglas; Senor, David J.

    2012-11-07

    Twelve AFIP in-process foil samples, fabricated by either Y-12 or LANL, were shipped from LANL to PNNL for potential characterization using optical and scanning electron microscopy techniques. Of these twelve, nine different conditions were examined to one degree or another using both techniques. For this report a complete description of the results are provided for one archive foil from each source of material, and one unirradiated piece of a foil of each source that was irradiated in the Advanced Test Reactor. Additional data from two other LANL conditions are summarized in very brief form in an appendix. The characterization revealed that all four characterized conditions contained a cold worked microstructure to different degrees. The Y-12 foils exhibited a higher degree of cold working compared to the LANL foils, as evidenced by the highly elongated and obscure U-Mo grain structure present in each foil. The longitudinal orientations for both of the Y-12 foils possesses a highly laminar appearance with such a distorted grain structure that it was very difficult to even offer a range of grain sizes. The U-Mo grain structure of the LANL foils, by comparison, consisted of a more easily discernible grain structure with a mix of equiaxed and elongated grains. Both materials have an inhomogenous grain structure in that all of the characterized foils possess abnormally coarse grains.

  7. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  8. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well

    Office of Scientific and Technical Information (OSTI)

    lasers on InP substrate (Journal Article) | SciTech Connect Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density

  9. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  10. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  11. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  12. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Citation Details In-Document Search Title: Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Abstract not provided. Authors: Ihlefeld, Jon ; Brumbach, Michael T. ; Allerman, Andrew A. ; Wheeler, David Roger ; Atcitty, Stanley Publication Date: 2015-01-01 OSTI Identifier: 1244879 Report Number(s): SAND2015-0073C 558329 DOE Contract Number: AC04-94AL85000 Resource

  13. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  14. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  15. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  16. Reduced Cu(InGa)Se2 Thickness in Solar Cells Using a Superstrate Configuration

    SciTech Connect (OSTI)

    Shafarman, William N.

    2015-03-30

    This project by the Institute of Energy Conversion (IEC) and the Department of Electrical and Computer Engineering at the University of Delaware sought to develop the technology and underlying science to enable reduced cost of Cu(InGa)Se2 manufacturing by reducing the thickness of the Cu(InGa)Se2 absorber layer by half compared to typical production. The approach to achieve this was to use the superstrate cell configuration in which light is incident on the cell through the glass. This structure facilitates optical enhancement approaches needed to achieve high efficiency with Cu(InGa)Se2 thicknesses less than 1 µm. The primary objective was to demonstrate a Cu(InGa)Se2 cell with absorber thickness 0.5 - 0.7 µm and 17% efficiency, along with a quantitative loss analysis to define a pathway to 20% efficiency. Additional objectives were the development of stable TCO and buffer layers or contact layers to withstand the Cu(InGa)Se2 deposition temperature and of advanced optical enhancement methods. The underlying fundamental science needed to effectively transition these outcomes to large scale was addressed by extensive materials and device characterization and by development of comprehensive optical models. Two different superstrate configurations have been investigated. A frontwall cell is illuminated through the glass to the primary front junction of the device. This configuration has been used for previous efforts on superstrate Cu(InGa)Se2 but performance has been limited by interdiffusion or reaction with CdS or other buffer layers. In this project, several approaches to overcome these limitations were explored using CdS, ZnO and ZnSe buffer layers. In each case, mechanisms that limit device performance were identified using detailed characterization of the materials and junctions. Due to the junction formation difficulties, efforts were concentrated on a new backwall configuration in which light is incident through the substrate into the back of the absorber layer. The primary junction is then formed after Cu(InGa)Se2 deposition. This allows the potential benefits of superstrate cells for optical enhancement while maintaining processing advantages of the substrate configuration and avoiding the harmful effects of high temperature deposition on p-n junction formation. Backwall devices have outperformed substrate cells at absorber thicknesses of 0.1-0.5 µm through enhanced JSC due to easy incorporation of a Ag reflector and, with light incident on the absorber, the elimination of parasitic absorption in the CdS buffer. An efficiency of 9.7% has been achieved for a backwall Cu(InGa)Se2 device with absorber thickness ~0.4 μm. A critical achievement that enabled implementation of the backwall cell was the development of a transparent back contact using MoO3 or WO3. Processes for controlled deposition of each material by reactive rf sputtering from metal targets were developed. These contacts have wide bandgaps making them well-suited for application as contacts for backwall devices as well as potential use in bifacial cells and as the top cell of tandem CuInSe2-based devices. Optical enhancement will be critical for further improvements. Wet chemical texturing of ZnO films has been developed for a simple, low cost light-trapping scheme for backwall superstrate devices to enhance long wavelength quantum efficiency. An aqueous oxalic acid etch was developed and found to strongly texture sputtered ZnO with high haze ≈ 0.9 observed across the whole spectrum. And finally, advanced optical models have been developed to assist the characterization and optimization of Cu(InGa)Se2 cells with thin absorbers

  17. New Generation of MoSx Based Solid Lubricant Coatings: Recent Developments and Applications

    SciTech Connect (OSTI)

    Haider, Julfikar; Hashmi, M. S. J.

    2011-01-17

    In recent times, there is a growing interest in applying Molybdenum disulphide (MoS{sub x}) solid lubricant coatings on components to improve the tribological performance (i.e. lower friction coefficient and wear rate). The tribological performance of MoS{sub x} coating is strongly dependent on coating properties and tribological environment. MoS{sub x} coatings are highly successful in certain applications such as in space/vacuum technology, but its effectiveness is questioned in other terrestrial applications such as in cutting tool industry due to its lower hardness and poor oxidation resistance leading to shorter life. In order to circumvent this drawback, the paper identifies that current research is being concentrated on developing MoS{sub x} based coatings using three different approaches: (1) Metal or compound addition in MoS{sub x} coating (2)MoS{sub x} layer on hard coating and (3)MoS{sub x} addition in hard coating matrix. Although the primary objective is same in all three cases, the third approach is considered to be more effective in improving the tribological properties of the coating. Finally, the potential applications of MoS{sub x} based coatings in different industrial sectors have been briefly outlined.

  18. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  19. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  20. Photo-oxidation method using MoS2 nanocluster materials

    DOE Patents [OSTI]

    Wilcoxon, Jess P.

    2001-01-01

    A method of photo-oxidizing a hydrocarbon compound is provided by dispersing MoS.sub.2 nanoclusters in a solvent containing a hydrocarbon compound contaminant to form a stable solution mixture and irradiating the mixture to photo-oxide the hydrocarbon compound. Hydrocarbon compounds of interest include aromatic hydrocarbon and chlorinated hydrocarbons. MoS.sub.2 nanoclusters with an average diameter less than approximately 10 nanometers are shown to be effective in decomposing potentially toxic aromatic and chlorinated hydrocarbons, such as phenol, pentachlorophenol, chlorinated biphenols, and chloroform, into relatively non-toxic compounds. The irradiation can occur by exposing the MoS.sub.2 nanoclusters and hydrocarbon compound mixture with visible light. The MoS.sub.2 nanoclusters can be introduced to the toxic hydrocarbons as either a MoS.sub.2 solution or deposited on a support material.

  1. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  2. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  3. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect (OSTI)

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  4. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  5. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  6. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  7. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  8. Synthesis and characterization of model MgO supported catalyst with Pt-Mo interactions.

    SciTech Connect (OSTI)

    Alexeev, O.; Kawi, S.; Gates, B.C. [Univ. of California, Davis, CA (United States)] [Univ. of California, Davis, CA (United States); Shelef, M. [Ford Motor Co., Dearborn, MI (United States)] [Ford Motor Co., Dearborn, MI (United States)

    1996-01-04

    MgO supported platinum and platinum-molybdenum catalysts were prepared from organometallic precursors and charaterized structurally to determine how the nature of the bimetallic precursors and the treatment conditions affected the interaction between the two metals. Samples were prepared from [PtCl{sub 2}(PhCN){sub 2}], [PtCl{sub 2}(PhCN){sub 2}] + [Mo(CO){sub 6}], and [C@Pt[Mo(CO){sub 3}(C{sub 5}H{sub 5})]{sub 2}(PhCN){sub 2}] BC@ characterized by infrared and extended X-ray absorption fine structure (EXAFS) spectroscopies, tranmission electron microscopy, and chemisorption of H{sub 2}, CO, and O{sub 2}. The samples were treated in H{sub 2} at 400{degree}C prior to most of the characterizatons. Incorporation of Mo reduced the chemisorption of CO and of H{sub 2}. EXAFS spectra measured at the Pt L{sub III} edge and at the Mo K edge showed substantial Pt-Mo contributions with a Pt-Mo cordination number of about 2 and an average distance of 2.63 A for the sample prepared from [C@Pt[Mo(CO){sub 3}(C{sub 5}H{sub 5})]{sub 2}(PhCN){sub 2}] BC@. In constract, no significant Pt-Mo contribution was observed for the sample prepared from [PtCl{sub 2}(PhCN){sub 2}]+ [Mo(CO){sub 6}]. Electron micrographs and EXAFS results show that interaction between Pt and Mo ions in the former sample helped to maintain the platinum in a highly dispersed form, with supported platinum clusters being smaller than about 10 A. 53 refs., 9 figs., 9 tabs.

  9. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    Patent: Reactive codoping of GaAlInP compound semiconductors Citation Details In-Document Search Title: Reactive codoping of GaAlInP compound semiconductors A GaAlInP compound ...

  10. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  11. Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A.; Geib, Kent M.; Briggs, Ronald D.; Beechem, Thomas E.; Shaffer, Ryan A.; Clevenger, Jascinda; Patrizi, Gary A.; Klem, John F.; et al

    2016-04-21

    Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less

  12. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  13. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect (OSTI)

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  14. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  15. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect (OSTI)

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  16. Surface Structures of Cubo-octahedral Pt-Mo Catalyst Nanoparticles from Monte Carlo Simulations

    SciTech Connect (OSTI)

    Wang, Guofeng; Van Hove, M.A.; Ross, P.N.; Baskes, M.I.

    2005-03-31

    The surface structures of cubo-octahedral Pt-Mo nanoparticles have been investigated using the Monte Carlo method and modified embedded atom method potentials that we developed for Pt-Mo alloys. The cubo-octahedral Pt-Mo nanoparticles are constructed with disordered fcc configurations, with sizes from 2.5 to 5.0 nm, and with Pt concentrations from 60 to 90 at. percent. The equilibrium Pt-Mo nanoparticle configurations were generated through Monte Carlo simulations allowing both atomic displacements and element exchanges at 600 K. We predict that the Pt atoms weakly segregate to the surfaces of such nanoparticles. The Pt concentrations in the surface are calculated to be 5 to 14 at. percent higher than the Pt concentrations of the nanoparticles. Moreover, the Pt atoms preferentially segregate to the facet sites of the surface, while the Pt and Mo atoms tend to alternate along the edges and vertices of these nanoparticles. We found that decreasing the size or increasing the Pt concentration leads to higher Pt concentrations but fewer Pt-Mo pairs in the Pt-Mo nanoparticle surfaces.

  17. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  18. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  19. Spectroscopic signatures of AA' and AB stacking of chemical vapor deposited bilayer MoS2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xia, Ming; Li, Bo; Yin, Kuibo; Capellini, Giovanni; Niu, Gang; Gong, Yongji; Zhou, Wu; Ajayan, Pulickel M.; Xie, Ya -Hong

    2015-11-04

    We discuss prominent resonance Raman and photoluminescence spectroscopic differences between AA'and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Also, resonance Raman and photoluminescence spectra of AA' and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom.

  20. New Insights Into a Functioning Mg-ion Cathode-Chevrel Phase Mo6S8 -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Joint Center for Energy Storage Research April 24, 2014, Research Highlights New Insights Into a Functioning Mg-ion Cathode-Chevrel Phase Mo6S8 An isosurface of the charge density difference between pristine Mo6S8 and the inclusion of a single Mg2+ intercalant (and accompanying 2 electrons). Colors: Yellow (cyan) indicates an increase (decrease) in electron density, the Mg atom is shown in orange, S yellow, Mo purple. Scientific Achievement First-principles analysis of the screening of Mg2+

  1. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect (OSTI)

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  2. Making it pay in Athens, GA

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  3. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  4. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  5. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  6. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect (OSTI)

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  7. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  8. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  9. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  10. Electrochemical Testing of Ni-Cr-Mo-Gd Alloys

    SciTech Connect (OSTI)

    T. E. Lister; R. E. Mizia; H. Tian

    2005-10-01

    The waste package site recommendation design specified a boron-containing stainless steel, Neutronit 976/978, for fabrication of the internal baskets that will be used as a corrosion-resistant neutron-absorbing material. Recent corrosion test results gave higher-than-expected corrosion rates for this material. The material callout for these components has been changed to a Ni-Cr-Mo-Gd alloy (ASTM-B 932-04, UNS N06464) that is being developed at the Idaho National Laboratory. This report discusses the results of initial corrosion testing of this material in simulated in-package environments that could contact the fuel baskets after breach of the waste package outer barrier. The corrosion test matrix was executed using the potentiodynamic and potentiostatic electrochemical test techniques. The alloy performance shows low rates of general corrosion after initial removal of a gadolinium-rich second phase that intersects the surface. The high halide-containing test solutions exhibited greater tendencies toward initiation of crevice corrosion.

  11. Thermo-physical Properties of DU-10 wt.% Mo Alloys

    SciTech Connect (OSTI)

    Douglas E. Burkes; Cynthia A. Papesch; Andrew P. Maddison; Thomas Hartmann; Francine J. Rice

    2010-08-01

    Low-enriched uranium alloyed with 10 wt% molybdenum is under consideration by the Global Threat Reduction Initiative reactor convert program as a very high density fuel to enable the conversion of high-performance research reactors away from highly-enriched uranium fuels. As with any fuel development program, the thermophysical properties of the fuel as a function of temperature are extremely important and must be well characterized in order to effectively model and predict fuel behavior under normal and off-normal irradiation conditions. For the alloy system under investigation, there is a lack of thermophysical property data, and in most cases, the data is relatively inconsistent and lacks sufficient explanation. Available literature on this alloy system comes mainly from studies done during the 1960s and 1970s, and often does not include sufficient information on fabrication history or conditions to draw conclusions for the current application. The current paper has investigated specific heat capacity, coefficient of linear thermal expansion, density, and thermal diffusivity that were then used to calculate alloy thermal conductivity as a function of temperature. The data obtained from this investigation was compared to available literature on similar U-Mo alloys, and in most cases are in good agreement.

  12. U.S. Energy Information Administration | Annual Coal Report 2014

    U.S. Energy Information Administration (EIA) Indexed Site

    5. Coal Consumers in the Manufacturing and Coke Sectors, 2014 Company Name Plant Location Top Ten Manufacturers American Crystal Sugar Co MN, ND Archer Daniels Midland IA, IL, MN, NE Carmeuse Lime Stone Inc AL, IN, KY, MI, OH, PA, TN, WI Cemex Inc AL, CA, CO, FL, GA, KY, OH, TN, TX Dakota Gasification Company ND Eastman Chemical Company TN Georgia-Pacific Consumer Products LP AL, GA, OK, VA, WI Holcim (US) Inc AL, CO, MD, MO, MT, OK, SC, TX, UT NewPage Corporation MD, MI, WI U S Steel

  13. Monolayers of MoS{sub 2} as an oxidation protective nanocoating material

    SciTech Connect (OSTI)

    Sen, H. Sener; Sahin, H.; Peeters, F. M.; Durgun, E.

    2014-08-28

    First-principle calculations are employed to investigate the interaction of oxygen with ideal and defective MoS{sub 2} monolayers. Our calculations show that while oxygen atoms are strongly bound on top of sulfur atoms, the oxygen molecule only weakly interacts with the surface. The penetration of oxygen atoms and molecules through a defect-free MoS{sub 2} monolayer is prevented by a very high diffusion barrier indicating that MoS{sub 2} can serve as a protective layer for oxidation. The analysis is extended to WS{sub 2} and similar coating characteristics are obtained. Our calculations indicate that ideal and continuous MoS{sub 2} and WS{sub 2} monolayers can improve the oxidation and corrosion-resistance of the covered surface and can be considered as an efficient nanocoating material.

  14. Microscopic origin of low frequency noise in MoS{sub 2} field-effect transistors

    SciTech Connect (OSTI)

    Ghatak, Subhamoy; Jain, Manish; Ghosh, Arindam; Mukherjee, Sumanta; Sarma, D. D.

    2014-09-01

    We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS{sub 2}) field-effect transistors in multiple device configurations including MoS{sub 2} on silicon dioxide as well as MoS{sub 2}-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO{sub 2} interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS{sub 2} contacts also play a significant role in determining noise magnitude in these devices.

  15. File:USDA-CE-Production-GIFmaps-MO.pdf | Open Energy Information

    Open Energy Info (EERE)

    MO.pdf Jump to: navigation, search File File history File usage Missouri Ethanol Plant Locations Size of this preview: 776 600 pixels. Full resolution (1,650 1,275 pixels,...

  16. Structure and Electronic Properties of MoVO type Mixed-metal...

    Office of Scientific and Technical Information (OSTI)

    and Theory Citation Details In-Document Search Title: Structure and Electronic Properties of MoVO type Mixed-metal Oxides a Combined View by Experiment and Theory Authors: ...

  17. NNSA Works to Establish a Reliable Supply of Mo-99 Produced Without...

    National Nuclear Security Administration (NNSA)

    DOENNSA's objective is to accelerate the establishment of a reliable, commercial Mo-99 supply network that avoids a single point of failure and does not use proliferation-sensitiv...

  18. Giant and tunable valley degeneracy splitting in MoTe 2 (Journal...

    Office of Scientific and Technical Information (OSTI)

    This content will become publicly available on September 7, 2016 Title: Giant and tunable valley degeneracy splitting in MoTe 2 Authors: Qi, Jingshan ; Li, Xiao ; Niu, Qian ; Feng, ...

  19. A pseudo binary y-Gd solidification diagram for Ni-Cr-Mo-Gd alloys...

    Office of Scientific and Technical Information (OSTI)

    Title: A pseudo binary y-Gd solidification diagram for Ni-Cr-Mo-Gd alloys. No abstract prepared. Authors: Dupont, John Neuman 1 ; Minicozzi, Michael J. 1 ; Robino, Charles ...

  20. Substrate interactions with suspended and supported monolayer MoS2: Angle-resolved photoemission spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jin, Wencan; Yeh, Po -Chun; Zaki, Nader; Zhang, Datong; Liou, Jonathan T.; Dadap, Jerry I.; Barinov, Alexey; Yablonskikh, Mikhail; Sadowski, Jerzy T.; Sutter, Peter; et al

    2015-03-17

    We report the directly measured electronic structure of exfoliated monolayer molybdenum disulfide (MoS₂) using micrometer-scale angle-resolved photoemission spectroscopy. Measurements of both suspended and supported monolayer MoS₂ elucidate the effects of interaction with a substrate. Thus, a suggested relaxation of the in-plane lattice constant is found for both suspended and supported monolayer MoS₂ crystals. For suspended MoS₂, a careful investigation of the measured uppermost valence band gives an effective mass at Γ¯ and Κ¯ of 2.00m₀ and 0.43m₀, respectively. We also measure an increase in the band linewidth from the midpoint of Γ¯Κ¯ to the vicinity of Κ¯ and briefly discussmore » its possible origin.« less

  1. AB INITIO Modeling of Thermomechanical Properties of Mo-Based Alloys for Fossil Energy Conversion

    SciTech Connect (OSTI)

    Ching, Wai-Yim

    2013-12-31

    In this final scientific/technical report covering the period of 3.5 years started on July 1, 2011, we report the accomplishments on the study of thermo-mechanical properties of Mo-based intermetallic compounds under NETL support. These include computational method development, physical properties investigation of Mo-based compounds and alloys. The main focus is on the mechanical and thermo mechanical properties at high temperature since these are the most crucial properties for their potential applications. In particular, recent development of applying ab initio molecular dynamic (AIMD) simulations to the T1 (Mo{sub 5}Si{sub 3}) and T2 (Mo{sub 5}SiB{sub 2}) phases are highlighted for alloy design in further improving their properties.

  2. High Quantum Efficiency AlGaN/InGaN Photodetectors

    SciTech Connect (OSTI)

    Buckley, James H; Leopold, Daniel

    2009-11-24

    High efficiency photon counting detectors in use today for high energy particle detection applications have a significant spectral mismatch with typical sources and have a number of practical problems compared with conventional bialkali photomultiplier tubes. Numerous high energy physics experiments that employ scintillation light detectors or Cherenkov detectors would benefit greatly from photomultipliers with higher quantum efficiencies. The need for extending the sensitivity of photon detectors to the blue and UV wavebands comes from the fact that both Cherenkov light and some scintillators have an emission spectrum which is peaked at short wavelengths. This research involves the development of high quantum efficiency, high gain, UV/blue photon counting detectors based on AlGaN/InGaN photocathode heterostructures grown by molecular beam epitaxy (MBE). The work could eventually lead to nearly ideal light detectors with a number of distinct advantages over existing technologies for numerous applications in high-energy physics and particle astrophysics. Potential advantages include much lower noise detection, better stability and radiation resistance than other cathode structures, very low radioactive background levels for deep underground experiments and high detection efficiency of individual UV-visible photons. We are also working on the development of photocathodes with intrinsic gain, initially improving the detection efficiency of hybrid semiconductor-vacuum tube devices, and eventually leading to an all-solid-state photomultiplier device.

  3. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect (OSTI)

    Lin, Chien-Hung Lee, Chien-Ping

    2014-10-21

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

  4. Improving Accident Tolerance of Nuclear Fuel with Coated Mo-alloy Cladding

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Improving Accident Tolerance of Nuclear Fuel with Coated Mo-alloy Cladding Citation Details In-Document Search Title: Improving Accident Tolerance of Nuclear Fuel with Coated Mo-alloy Cladding Authors: Cheng, Bo ; Kim, Young-Jin ; Chou, Peter Publication Date: 2016-02-01 OSTI Identifier: 1253199 Type: Published Article Journal Name: Nuclear Engineering and Technology Additional Journal Information: Journal Volume: 48; Journal Issue: 1; Related Information:

  5. Li Intercalation in MoS 2 : In Situ Observation of Its Dynamics and Tuning

    Office of Scientific and Technical Information (OSTI)

    Optical and Electrical Properties (Journal Article) | SciTech Connect Li Intercalation in MoS 2 : In Situ Observation of Its Dynamics and Tuning Optical and Electrical Properties Citation Details In-Document Search Title: Li Intercalation in MoS 2 : In Situ Observation of Its Dynamics and Tuning Optical and Electrical Properties Authors: Xiong, Feng ; Wang, Haotian ; Liu, Xiaoge ; Sun, Jie ; Brongersma, Mark ; Pop, Eric ; Cui, Yi Publication Date: 2015-10-14 OSTI Identifier: 1244610 DOE

  6. Climate Action Champions: Mid-America Regional Council, KS and MO |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Mid-America Regional Council, KS and MO Climate Action Champions: Mid-America Regional Council, KS and MO The Mid-America Regional Council (MARC) is a nonprofit association of city and county governments and the metropolitan planning organization for the bistate Kansas City region. They provide a forum for the region to work together to advance social, economic and environmental progress. MARC received the Climate Action Champion designation in consortium with the City

  7. Valence and metal/silicate partitioning of Mo: Implications for conditions

    Office of Scientific and Technical Information (OSTI)

    of Earth accretion and core formation (Journal Article) | SciTech Connect Valence and metal/silicate partitioning of Mo: Implications for conditions of Earth accretion and core formation Citation Details In-Document Search Title: Valence and metal/silicate partitioning of Mo: Implications for conditions of Earth accretion and core formation Authors: Righter, K. ; Danielson, L. R. ; Pando, K. M. ; Shofner, G. A. ; Sutton, S. R. ; Newville, M. ; Lee, C. -T. [1] ; UC) [2] ; Rice) [2] + Show

  8. Dynamic Structural Response and Deformations of Monolayer MoS 2 Visualized

    Office of Scientific and Technical Information (OSTI)

    by Femtosecond Electron Diffraction (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Dynamic Structural Response and Deformations of Monolayer MoS 2 Visualized by Femtosecond Electron Diffraction Citation Details In-Document Search Title: Dynamic Structural Response and Deformations of Monolayer MoS 2 Visualized by Femtosecond Electron Diffraction Authors: Mannebach, Ehren M. ; Li, Renkai ; Duerloo, Karel-Alexander ; Nyby, Clara ; Zalden, Peter ; Vecchione,

  9. U-EXTRACTION--IMPROVEMENTS IN ELIMINATION OF Mo BY USE OF FERRIC ION

    DOE Patents [OSTI]

    Clark, H.M.; Duffey, D.

    1958-06-10

    An improved solvent extraction process is described whereby U may be extracted by a water immiscible organic solvent from an aqueous solution of uranyl nitrate. It has been found that Mo in the presence of phosphate ions appears to form a complex with the phosphate which extracts along with the U. This extraction of Mo may be suppressed by providing ferric ion in the solution prior to the extraction step. The ferric ion is preferably provided in the form of ferric nitrate.

  10. Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial Graphene

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial Graphene Citation Details In-Document Search Title: Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial Graphene Authors: Liu, Xiaolong ; Balla, Itamar ; Bergeron, Hadallia ; Campbell, Gavin P. ; Bedzyk, Michael J. ; Hersam, Mark C. [1] + Show Author Affiliations NWU Publication Date: 2016-03-04 OSTI Identifier: 1240188 Resource Type: Journal Article Resource Relation: Journal

  11. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Lee, Ching-Sung; Lour, Wen-Shiung; Ma, Yung-Chun; Ye, Sheng-Shiun

    2011-05-15

    Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

  12. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect (OSTI)

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??GaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  13. High reflectance and low stress Mo2C/Be multilayers

    DOE Patents [OSTI]

    Bajt, Sasa; Barbee, Jr., Troy W.

    2001-01-01

    A material for extreme ultraviolet (EUV) multilayers that will reflect at about 11.3 nm, have a high reflectance, low stress, and high thermal and radiation stability. The material consists of alternating layers of Mo.sub.2 C and Be deposited by DC magnetron sputtering on a substrate, such as silicon. In one example a Mo.sub.2 C/Be multilayer gave 65.2% reflectance at 11.25 nm measured at 5 degrees off normal incidence angle, and consisted of 70 bilayers with a deposition period of 5.78 nm, and was deposited at 0.83 mTorr argon (Ar) sputtering pressure, with the first and last layers being Be. The stress of the multilayer is tensile and only +88 MPa, compared to +330 MPa of a Mo/Be multilayers of the same thickness. The Mo.sub.2 C/Be multilayer was capped with carbon which produced an increase in reflectivity of about 7% over a similar multilayer with no carbon capping material, thus raising the reflectivity from 58.3% to over 65%. The multilayers were formed using either Mo.sub.2 C or Be as the first and last layers, and initial testing has shown the formation of beryllium carbide at the interfaces between the layers which both stabilizes and has a smoothing effect, and appear to be smoother than the interfaces in Mo/Be multilayers.

  14. Thermal stability of intermetallic phases in Fe-rich Fe-Cr-Ni-Mo alloys

    SciTech Connect (OSTI)

    Yang, Ying; Tan, Lizhen; Busby, Jeremy T.

    2015-06-12

    Understanding the stability of precipitate phases in the Fe-rich Fe-Cr-Ni-Mo alloys is critical to the alloy design and application of Mo-containing Austenitic steels. Coupled with thermodynamic modeling, stability of the chi and Laves phases in two Fe-Cr-Ni-Mo alloys were investigated at 1000, 850 and 700 °C for different annealing time. The morphologies, compositions and crystal structures of the matrix and precipitate phases were carefully examined by Scanning Electron Microscopy, Electron Probe Microanalysis, X-ray diffraction and Transmission Electron Microscopy. The two key findings resulted from this work. One is that the chi phase is stable at high temperature and transformed into the Laves phase at low temperature. The other is that both the chi and Laves phases have large solubilites of Cr, Mo and Ni, among which the Mo solubility has a major role on the relative stability of the precipitate phases. The developed thermodynamic models were then applied to evaluating the Mo effect on the stability of precipitate phases in AISI 316 and NF709 alloys.

  15. Stability of precipitate phases in Fe-rich Fe-Cr-Ni-Mo alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Ying; Tan, Lizhen; Busby, Jeremy T

    2015-01-01

    Understanding the stability of precipitate phases in the Fe-rich Fe-Cr-Ni-Mo alloys is critical to the alloy design and application of Mo-containing Austenitic steels. Coupled with thermodynamic modeling, stability of the and phases in two Fe-Cr-Ni-Mo alloys were investigated at 1000, 850 and 700 C for different annealing time. The morphologies, compositions and crystal structures of the matrix and precipitate phases were carefully examined by Scanning Electron Microscopy, Electron Probe Microanalysis, X-ray diffraction and Transmission Electron Microscopy. Two key findings resulted from this work. One is that the phase is stable at high temperature and transformed into the phase at lowmoretemperature. The other is that both the and phases have large solubilites of Cr, Mo and Ni, among which the Mo solubility has a major role on the relative stability of the precipitate phases. The developed thermodynamic models were then applied to evaluating the Mo effect on the stability of precipitate phases in AISI 316 and NF709 alloys.less

  16. Thermal stability of intermetallic phases in Fe-rich Fe-Cr-Ni-Mo alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Ying; Tan, Lizhen; Busby, Jeremy T.

    2015-06-12

    Understanding the stability of precipitate phases in the Fe-rich Fe-Cr-Ni-Mo alloys is critical to the alloy design and application of Mo-containing Austenitic steels. Coupled with thermodynamic modeling, stability of the chi and Laves phases in two Fe-Cr-Ni-Mo alloys were investigated at 1000, 850 and 700 °C for different annealing time. The morphologies, compositions and crystal structures of the matrix and precipitate phases were carefully examined by Scanning Electron Microscopy, Electron Probe Microanalysis, X-ray diffraction and Transmission Electron Microscopy. The two key findings resulted from this work. One is that the chi phase is stable at high temperature and transformed intomore » the Laves phase at low temperature. The other is that both the chi and Laves phases have large solubilites of Cr, Mo and Ni, among which the Mo solubility has a major role on the relative stability of the precipitate phases. The developed thermodynamic models were then applied to evaluating the Mo effect on the stability of precipitate phases in AISI 316 and NF709 alloys.« less

  17. MoS{sub 2} nanotube exfoliation as new synthesis pathway to molybdenum blue

    SciTech Connect (OSTI)

    Visic, B.; Gunde, M. Klanjsek; Kovac, J.; Iskra, I.; Jelenc, J.; Remskar, M.; Centre of Excellence Namaste, Jamova cesta 39, SI-1000 Ljubljana

    2013-02-15

    Graphical abstract: . Display Omitted Highlights: ? New synthesis approach to obtaining molybdenum blue via exfoliated MoS{sub 2} nanotubes. ? Material is prone to self assembly and is stable in high vacuum. ? Molecules are as small as 2 nm and their clusters are up to tens of nanometers. ? Change in absorption and oxidation states from the precursor MoS{sub 2}. -- Abstract: Molybdenum blue-type materials are usually obtained by partially reducing Mo{sup VI+} in acidic solutions, while in the presented method it is formed in ethanol solution of exfoliated MoS{sub 2} nanotubes, where the MoS{sub 2} flakes are the preferential location for their growth. Material was investigated by means of scanning electron and atomic force microscopy, showing the structure and self assembly, while also confirming that it is stable in high vacuum with molecules as small as 1.6 nm and the agglomerates of few tens of nanometres. The ultravioletvisible and photoelectron spectrometry show the change in absorption properties and oxidation states from MoS{sub 2} structure to molybdenum blue, while the presence of sulphur suggests that this is a new type of molybdenum blue material.

  18. Effects of thermal treatment on the co-rolled U-Mo fuel foils

    SciTech Connect (OSTI)

    Dennis D. Keiser, Jr.; Tammy L. Trowbridge; Cynthia R. Breckenridge; Brady L. Mackowiak; Glenn A. Moore; Barry H. Rabin; Mitchell K. Meyer

    2014-11-01

    A monolithic fuel type is being developed to convert US high performance research and test reactors such as Advanced Test Reactor (ATR) at Idaho National Laboratory from highly enriched uranium (HEU) to low-enriched uranium (LEU). The interaction between the cladding and the U-Mo fuel meat during fuel fabrication and irradiation is known to have negative impacts on fuel performance, such as mechanical integrity and dimensional stability. In order to eliminate/minimize the direct interaction between cladding and fuel meat, a thin zirconium diffusion barrier was introduced between the cladding and U-Mo fuel meat through a co-rolling process. A complex interface between the zirconium and U-Mo was developed during the co-rolling process. A predictable interface between zirconium and U-Mo is critical to achieve good fuel performance since the interfaces can be the weakest link in the monolithic fuel system. A post co-rolling annealing treatment is expected to create a well-controlled interface between zirconium and U-Mo. A systematic study utilizing post co-rolling annealing treatment has been carried out. Based on microscopy results, the impacts of the annealing treatment on the interface between zirconium and U-Mo will be presented and an optima annealing treatment schedule will be suggested. The effects of the annealing treatment on the fuel performance will also be discussed.

  19. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  20. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN

    Office of Scientific and Technical Information (OSTI)

    Sandia National Laboratories Exceptional service in the national interest SAND2015-0073C Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN 22 January 2015 Jon Ihlefeld, Michael Brumbach, Andrew A. Allerman, David R. Wheeler, and Stanley Atcitty This work was supported by the U.S. Department of Energy's Office of Electricity Delivery and Energy Reliability Program managed by Dr. Imre Gyuk and the Laboratory Directed Research and Development Program at Sandia National