Sample records for mo georgia ga

  1. ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY M.A. Contreras, 2

    E-Print Network [OSTI]

    Sites, James R.

    of the deposition rate control. Figure 1. Total-area current-voltage data for MgF2/ZnO/ZnS(O,OH)/CIGS/Mo solar cellZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY 1 M.A. Contreras, 2 T. Nakada, 2 M of 18.6% for Cu(In,Ga)Se2 solar cells that incorporate a ZnS(O,OH) buffer layer as an alternative to Cd

  2. Forestry Policies (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia's Forests are managed by the Georgia Forestry Commission. In 2009 the Commission completed a statewide assessment of biomass resources:

  3. Georgia Hazardous Site Response Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Hazardous Site Response Act is Georgia’s version of Superfund. The Act provides for graduated fees on the disposal of hazardous waste, a trust fund to enable the EPD to clean up or plan...

  4. Georgia Radiation Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Radiation Control Act is designed to prevent any associated harmful effects upon the environment or the health and safety of the public through the institution and maintenance of a...

  5. Georgia Geriatric Education Center

    E-Print Network [OSTI]

    Arnold, Jonathan

    Georgia Geriatric Education Center © Photography courtesy of the U.S. Administration on Aging. Georgia Geriatric Education Center Latestresourcesandtrainingforbestpracticesingerontologyandgeriatrics. The Georgia Geriatric Education Center (GGEC) is a statewide effort designed to help you access the latest

  6. Georgia Water Quality Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Water Quality Control Act (WQCA) is a set of environmental regulations and permitting requirements that comply with the federal Clean Water Act. The Georgia Water Quality Control Act...

  7. Georgia Erosion and Sedimentation Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Erosion and Sedimentation Act (GESA) is designed to protect vegetated buffers. GESA establishes a minimum undisturbed, vegetated buffer of 25 feet for all streams in Georgia (measured...

  8. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    , and lake associations. At the national level, GWRI has collaborative efforts with the California Energy with support from the U.S. Agency for International Development, World Bank, Food and Agriculture Organization Prices in Georgia" USGS 104B/GWRI Project, Susanna Ferriera # 2011GA275B #1266663 (3) Impact of Upstream

  9. Georgia Underground Storage Tank Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Underground Storage Act (GUST) provides a comprehensive program to prevent, detect, and correct releases from underground storage tanks (“USTs”) of “regulated substances” other than...

  10. Cu(In,Ga)Se{sub 2} absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

    SciTech Connect (OSTI)

    Leonard, E.; Arzel, L.; Tomassini, M.; Barreau, N., E-mail: nicolas.barreau@univ-nantes.fr [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Zabierowski, P. [Faculty of Physics, Warsaw University of Technology, Koszykowa 75, PL 00-662 Warsaw (Poland); Fuertes Marrón, D. [Instituto de Energía Solar–ETSIT, Technical University of Madrid, Ciudad Universitaria s.n., 28040 Madrid (Spain)

    2014-08-21T23:59:59.000Z

    Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se{sub 2} (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5??m-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.

  11. Georgia Tech Dangerous Gas

    E-Print Network [OSTI]

    Sherrill, David

    1 Georgia Tech Dangerous Gas Safety Program March 2011 #12;Georgia Tech Dangerous Gas Safety.......................................................................................................... 5 6. DANGEROUS GAS USAGE REQUIREMENTS................................................. 7 6.1. RESTRICTED PURCHASE/ACQUISITION RULES: ................................................ 7 7. FLAMMABLE GAS

  12. Georgia Air Quality Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Air Quality Control Act (AQCA) is a set of environmental regulations, permitting requirements, and air quality standards that control the amount of pollutants emitted and who emits them...

  13. Georgia Surface Mining Act of 1968 (Georgia)

    Broader source: Energy.gov [DOE]

    This law regulates all surface mining in Georgia, including the coastal zone. It includes provisions to “advance the protection of fish and wildlife and the protection and restoration of land,...

  14. Georgia Safe Dams Act of 1978 (Georgia)

    Broader source: Energy.gov [DOE]

    The purpose of the Georgia Safe Dams Act is to provide regulation, inspection and permitting of dams to the State. The Director of the Environmental Protection Division (EPD) is responsible for...

  15. Shore Protection Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Shore Protection Act is the primary legal authority for protection and management of Georgia's shoreline features including sand dunes, beaches, sandbars, and shoals, collectively known as the...

  16. Georgia Underground Gas Storage Act of 1972 (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Underground Gas Storage Act, which permits the building of reserves for withdrawal in periods of peak demand, was created to promote the economic development of the State of Georgia and...

  17. Michael J. Poston Atlanta, GA 30307

    E-Print Network [OSTI]

    Orlando, Thomas

    Page | 1 Michael J. Poston Atlanta, GA 30307 Michael.Poston@gatech.edu Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR ­ Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J

  18. University of Georgia 2020 Strategic Plan

    E-Print Network [OSTI]

    Arnold, Jonathan

    ......................................................................34 Appendix E. University of Georgia Funding Source Trend Summary..........................................35University of Georgia 2020 Strategic Plan Building on Excellence October 30, 2012 #12;Building...............................................................................................................................................1 The Mission of the University of Georgia

  19. Georgia Oil and Gas Deep Drilling act of 1975 (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia's Oil and Gas and Deep Drilling Act regulates oil and gas drilling activities to provide protection of underground freshwater supplies and certain "environmentally sensitive" areas. The...

  20. Georgia Comprehensive Solid Waste Management Act of 1990 (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Comprehensive Solid Waste Management Act (SWMA) of 1990 was implemented in order to improve solid waste management procedures, permitting processes and management throughout the state. ...

  1. Georgia Hazardous Waste Management Act

    Broader source: Energy.gov [DOE]

    The Georgia Hazardous Waste Management Act (HWMA) describes a comprehensive, Statewide program to manage hazardous wastes through regulating hazardous waste generation, transportation, storage,...

  2. 2014 Race to Zero Student Design Competition: Georgia Institute...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia...

  3. Georgia Biofuel Directory A directory of Georgia industries that use biofuels.

    E-Print Network [OSTI]

    Georgia Biofuel Directory · A directory of Georgia industries that use biofuels. · Completed in May _________________________________________________________________ 3 Biofuels_____________________________________________________________________ 4 Biofuel Use in Georgia that Burn Self-Generated Biofuels as of May 2003__ 4 Chart 1.0 Biofuel Use from Contacted

  4. Georgia Cities Foundation- Green Communities Revolving Loan Fund (Georgia)

    Broader source: Energy.gov [DOE]

    The Green Communities Fund is a revolving loan fund providing low-interest loans to businesses located within the city limits of any city in Georgia. Loans are available for existing as well as new...

  5. Georgia Interfaith Power and Light- Energy Improvement Grants (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia Interfaith Power and Light (GIPL) offers grants of up to $10,000 to congregations or faith-based communities, including faith-based schools. Grant funds may be used for energy conservation...

  6. Georgia Power- Solar Buyback Program

    Broader source: Energy.gov [DOE]

    Georgia Power, the state's largest utility, has established a green power program, that allows the company to purchase limited solar generation at a premium price based on other customers volunta...

  7. Georgia Power- Advanced Solar Initiative

    Broader source: Energy.gov [DOE]

    Note: According to Georgia Power's website, the Advanced Solar Initiative's final program guidelines are due to be published on June 25th and the bidding period for is expected to open on July 10,...

  8. A climatology, synoptic assessment, and thermodynamic evaluation for cloud-to-ground lightning in Georgia: a study for the 1996 Summer Olympics

    E-Print Network [OSTI]

    Livingston, Eric Scott

    1995-01-01T23:59:59.000Z

    flash density within 50 km of Savannah, Georgia for the month of August from 1986 to 1993. . . . . . . . . 35 Average ground flash density within 50 km of the Ocoee River in Tennessee for the month of July from 1986 to 1993.... LATITUDE LONGITUDE Ol ic Rin Columbus, GA Con ers, GA Athens, GA Ocoee River, TN Stone Mtn. , GA Wolf Creek, GA Savannah, GA Gainesville, GA 33. 74 32. 52 33. 67 33. 95 35. 07 33. 80 33. 67 32. 13 34. 32 84. 40 84. 95 83. 97 83. 32...

  9. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    dissemination, and works collaboratively with various local, state, and federal agencies. These include #35334). (5) Tidal Streams: A Renewable Energy Source for Georgia , Kevin Haas, Georgia Institute, environmental organizations, lake associations, California Energy Commission, California Department of Water

  10. Georgia Green Loans Save and Sustain Program

    Broader source: Energy.gov [DOE]

    Georgia Green Loans, a non-profit microlending agency, offers funding to "green" businesses using funding from a Georgia Environmental Finance Authority (GEFA) grant. The GEFA grant is based on...

  11. Georgia Southern University Information Technology

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Information Technology Organization Chart 2013-2014 FINAL: September 18, 2013 R\\Work\\Common:\\OrgCharts\\Rev2014\\ Information Technology \\CIO Produced: Strategic Research of the groups of units reporting there. President Vice President for Information Technology and Chief

  12. Georgia Tech Vehicle Acquisition and

    E-Print Network [OSTI]

    1 2012 Georgia Tech 10/10/2012 Vehicle Acquisition and Disposition Manual #12;2 Vehicle Procedures Regardless of value, all vehicles should be included in this process. Acquisition of a Vehicle 1. Contact Fleet Coordinator to guide the departments in the purchasing process for all vehicles. 2. Fill out

  13. MO. REV. MO. MAGNETIC CLEANLINESS GUIDELINES

    E-Print Network [OSTI]

    Rathbun, Julie A.

    MO. REV. MO. ATM-865 MAGNETIC CLEANLINESS GUIDELINES PAGE 1 Of 3 DATE 4/6/70 The purpose of this ATM is to update the ALSEP Magnetic Cleanliness Guidelines as delineated in A TM-294, dated 1 June. ATM-865 MAGNETIC CLEANLINESS GUIDELINES PAGE 2 OF 3 DATE 4/6/70 A review of the ALSEP Magnetic

  14. Updated 11/1/2012 GEORGIA INSTITUTE OF TECHNOLOGY

    E-Print Network [OSTI]

    Li, Mo

    Updated 11/1/2012 GEORGIA INSTITUTE OF TECHNOLOGY OFFICE OF FINANCIAL SERVICES ADMINSTRATION Cash/Investment Management Debt Management Georgia Tech Facilities, Inc. Georgia Advanced Technology Ventures, Inc. Project Accounting Cost Accounting Rate Studies Negotiations Salary, Planning

  15. GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY

    E-Print Network [OSTI]

    Das, Suman

    GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY Ratified by the Institute Council on Environmental Health and Safety August 2008 POLICY Georgia Institute of Technology (Georgia environmental health and safety laws and regulations; and Demonstrating leadership in pollution prevention

  16. Renewable and Non-Renewable Resources Tariff RNR-7 (Georgia)

    Broader source: Energy.gov [DOE]

    The Renewable and Non-Renewable Resource tariff is authorized by the Georgia Public Service Commission (PSC), which requires that the investor owned utility, Georgia Power Company, purchase...

  17. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia...

    Office of Environmental Management (EM)

    Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking October...

  18. GEORGIA RECOVERY ACT SNAPSHOT | Department of Energy

    Energy Savers [EERE]

    ACT SNAPSHOT Georgia has substantial natural resources, including biomass and hydroelectric power .The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  19. Qualifying RPS State Export Markets (Georgia)

    Broader source: Energy.gov [DOE]

    This entry lists the states with Renewable Portfolio Standard (RPS) policies that accept generation located in Georgia as eligible sources towards their RPS targets or goals. For specific...

  20. Petroleum Pipeline Eminent Domain Permit Procedures (Georgia)

    Broader source: Energy.gov [DOE]

    The Petroleum Pipeline Eminent Domain Permit Procedures serve to protect Georgia's natural and environmental resources by requiring permits be issued by the Director of the Environmental Protection...

  1. Wood Fired Steam Plants in Georgia 

    E-Print Network [OSTI]

    Bulpitt, W. S.

    1983-01-01T23:59:59.000Z

    . Shortly after that time, Georgia Tech and the Georgia Forestry Commission embarked on a number of projects directed toward providing the use of wood as an industrial energy source. This paper will present an overview of these programs with an emphasis...

  2. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    ) INFORM: Integrated Forecast and Reservoir Management System for Northern California, Aris Georgakakos PI Water Resources Institute GWRI mission is to help improve water resources management in Georgia, the US planning and management framework for Georgia. The GWRI planning tools are used to (i) determine flow

  3. Central Georgia EMC- Photovoltaic Rebate Program

    Broader source: Energy.gov [DOE]

    In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

  4. Alternative Fuels Data Center: Georgia Information

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    production facilities in Georgia, use the TransAtlas interactive mapping tool or use BioFuels Atlas to show the use and potential production of biofuels throughout the U.S. and...

  5. NOTICE OF FACULTY VACANCY IN ART EDUCATION The Lamar Dodd School of Art at The University of Georgia invites applications for the

    E-Print Network [OSTI]

    Arnold, Jonathan

    NOTICE OF FACULTY VACANCY IN ART EDUCATION The Lamar Dodd School of Art at The University Education Search Committee Lamar Dodd School of Art The University of Georgia 270 River Rd. Athens, Ga in regard to both outdoor and urban activities (www.exploregeorgia.org). The Lamar Dodd School of Art

  6. The University of Georgia Center for Agribusiness and Economic Development

    E-Print Network [OSTI]

    Scott, Robert A.

    and Environmental Sciences An Evaluation of Direct and Indirect Economic Losses Incurred by Georgia FruitThe University of Georgia Center for Agribusiness and Economic Development College of Agricultural ............................................................................................................................................................ 3 Economic Consequences

  7. Sensible Solar Fueling Energy Revolution in Georgia | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Sensible Solar Fueling Energy Revolution in Georgia Sensible Solar Fueling Energy Revolution in Georgia May 14, 2010 - 3:35pm Addthis Joshua DeLung During his recent commencement...

  8. atlanta georgia usa: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    values SECURING AMERICA'S FUTURE 12;0 1Georgia Tech Research Institute Annual Report Bennett, Gisele 9 School of Biology Atlanta, Georgia 30332-0230 USA Biology and Medicine...

  9. Cu(In,Ga)Se2based Photovoltaics: Challenges and Opportunities

    E-Print Network [OSTI]

    Firestone, Jeremy

    % Different companies, processes, substrates Substrate Mo Cu(InGa)Se2 buffer TCO Cu(InGa)Se2 Solar Cells #12-evaporation using 3-stage process (ZSW, NREL) Reaction of sputtered precursors (Solar Frontier) From pilot; High optical absorption Unique properties for solar cells Compositional tolerance Cu(InGa)Se2 Thin

  10. Georgia Tech / Honeywell 4GCNVKOG%QQRGTCVKXG$GJCXKQTHQT

    E-Print Network [OSTI]

    Georgia Tech / Honeywell 4GCNVKOG%QQRGTCVKXG$GJCXKQTHQT 6CEVKECN/QDKNG4QDQV6GCOU and #12;Georgia Tech / Honeywell 6GEJPQNQI[6JTWUV#TGCU 3 Fault-tolerant reactive group behaviors 3 Communication analysis and management #12;Georgia Tech / Honeywell /KUUKQP.CD Problem Statement ­ Constructing robot

  11. Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin "lms

    E-Print Network [OSTI]

    Rockett, Angus

    Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin, As ngstro( m Solar Center, P.O. Box 534, SE-751 21 Uppsala, Sweden Department of Materials Science Mo thin "lms used as back contacts for Cu(In,Ga)Se solar cells. The samples were analysed

  12. Comparison of Georgia and US Per Capita Fruit, Vegetable, Livestock, and Poultry Consumption, 2011 Estimated 2011 Georgia

    E-Print Network [OSTI]

    Scott, Robert A.

    Comparison of Georgia and US Per Capita Fruit, Vegetable, Livestock, and Poultry Consumption, 2011 Capita) Data System 4 Value= Per capita consumption (column 3) multiplied by Georgia Population (9 Estimated 2011 Georgia Population (9,687,653)1 2011 Farm Gate Production (lbs)2 2010 Per Capita US

  13. Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualPropertyd8c-a9ae-f8521cbb8489InformationFrenchtown,JumpValleyTopicsGeorgia/WindGeorgia:

  14. Georgia Power- Residential Solar and Heat Pump Water Heater Rebate (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia Power customers may be eligible for rebates up to $250 each toward the installation costs of a 50 gallon or greater solar water heater or heat pump water heater. The solar water heater or...

  15. Georgia Southern University Business and Finance

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Business and Finance Organization Chart 2013-2014 FINAL: September 18, 2013 R:\\Work\\Common\\Org Charts\\Rev2014\\ Business & Finance Produced: Strategic Research & Analysis/KBM President Vice President for Business and Finance Associate Vice President for Finance Associate Vice

  16. Georgia Tech Profiling Overconsolidation Ratio in

    E-Print Network [OSTI]

    Mayne, Paul W.

    Properties: M = 6 sin'/(3-sin') ' = effective stress friction angle Cc = compression index Cs = swelling index . 1 ­ Cs/Cc IR = G/su = Undrained Rigidity Index G = shear modulus su = undrained shear strength vovot I qM OCR #12;Georgia Tech Determine Undrained Rigidity Index = shear stress= shear stress ss

  17. IEEE Energy2030 Atlanta, Georgia, USA

    E-Print Network [OSTI]

    Ratnasamy, Sylvia

    an innovative electric power architecture, rooted in lessons learned from the Internet and microgrids, whichIEEE Energy2030 Atlanta, Georgia, USA 17-18 November 2008 An Architecture for Local Energy-disruptive incremental adoption. Such a system, which we term a "LoCal" grid, is controlled by intelligent power switches

  18. The University of Georgia Senior Vice President

    E-Print Network [OSTI]

    Arnold, Jonathan

    directly to the Senior Vice President. In Summer 2011--in response to the recent development to the University of Georgia). These factors included, among others: decreasing state support; increased demands historic campus; and hiring, retention, compression and morale issues compounded by the inability

  19. The University of Georgia Teaching Academy

    E-Print Network [OSTI]

    Arnold, Jonathan

    The University of Georgia Teaching Academy Mission Statement The mission of the Academy is to promote and celebrate excellence in teaching and to foster learning through inquiry. Goals The Academy Engineering David S. Williams, Honors Program Teaching Academy Induction Dinner and Ceremony Membership Class

  20. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    and Wildlife Service. GWRI also has a significant international involvement in Europe, Africa, China, and South-based Hydrologic Forecasts, Aris Georgakakos PI, Georgia Institute of Technology, sponsored by NOAA OGP Climate graduate education, applied research, and technology transfer in the areas of water, energy

  1. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    associations. At the national level, GWRI collaborative efforts with the California Energy Commission program in Europe, Africa, China, Middle East, and South America with support from the U.S. Agency of Georgia, sponsored by USGS under grant #1266663 (Fund R7113). (5) Operational Multi-scale Forecast

  2. Ethanol Conversion on Cyclic (MO3)3 (M = Mo, W) Clusters. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Conversion on Cyclic (MO3)3 (M Mo, W) Clusters. Ethanol Conversion on Cyclic (MO3)3 (M Mo, W) Clusters. Abstract: Oxides of molybdenum and tungsten are an important class of...

  3. Seth Marder Title: Regent's Professor, Georgia Power Chair in Energy Efficiency

    E-Print Network [OSTI]

    Garmestani, Hamid

    Seth Marder Title: Regent's Professor, Georgia Power Chair in Energy Efficiency University's Professor, the Georgia Power Chair of Energy Efficiency, and Professor of Chemistry and Materials Science

  4. Georgia Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Act State Memo Georgia has substantial natural resources, including biomass and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  5. Central Georgia EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes.  This year,...

  6. GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI-Accredited Standards Developer Clarification of Intent: SEP energy management standards Administrator: Holly Grell-Lawe...

  7. atlanta georgia metropolitan: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of 2004. Five notable plumes of SO2, apparently from coal-fired power plants, were Weber, Rodney 12 ACI Spring Convention Atlanta Georgia Engineering Websites Summary:...

  8. EA-1963: Elba Liquefaction Project, Savannah, Georgia

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERC’s eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

  9. The Gerontology Institute at Georgia State University invites applications for

    E-Print Network [OSTI]

    Arnold, Jonathan

    to external funding. Georgia State University is the Southeast's leading urban research institution. More thanThe Gerontology Institute at Georgia State University invites applications for a tenure. This position is affiliated with the University's Partnership in Urban Health Research (http

  10. URBAN/INDUSTRIAL LAND PRIVATIZATION The Republic of Georgia

    E-Print Network [OSTI]

    Onsrud, Harlan J.

    reviewed overall market reform prospects in the Republic of Georgia. The findings indicate that Georgia's market reform lags behind several other New Independent State (NIS) countries. This is largely due' support for market reform initiatives. With the ethnic conflict under control, the USAID assessment team

  11. Energy Incentive Programs, Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the YouTube|6721 Federal RegisterHydrogenDistributionFact SheetColoradoGeorgia Energy

  12. Gordon, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, search OpenEI ReferenceJump to: navigation, searchGoodyear, Arizona:Georgia:

  13. Ailey, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapersWindeySanta2004) |Agawam,Ahmeek, Michigan:County,Ailey, Georgia:

  14. Categorical Exclusion Determinations: Georgia | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO OverviewAttachments EnergyFebruary3 Categorical ExclusionCalifornia|Georgia Categorical

  15. Abbeville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcat 1AMEE Jump to: navigation, search40Georgia: Energy Resources

  16. Panthersville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall,Missouri:EnergyOssian, NewPalisades Park,Panthersville, Georgia: Energy

  17. Dunwoody, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOE FacilityDimondale,South, New Jersey:JumpOregon: EnergyDunnDunwoody, Georgia:

  18. Milton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville, Ohio:Menomonee|Mililani Town,Millinocket,Milo, Maine: EnergyGeorgia:

  19. Tucker, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTri Global Energy LLC Place: Dallas, Texas Zip:HillsTucker, Georgia: Energy

  20. Americus, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcat Place:Alvan Blanch GreenAmerenSamoa: EnergyAWSAmericus, Georgia:

  1. GEORGIA GENERAL ASSEMBLY 4/2010

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbell isOklahoma City,GENERAL TERMS &GEORGIA

  2. Rochelle, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to: navigation,MazeOhio: EnergyTennessee:Rochelle, Georgia: Energy

  3. Roswell, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to:Roscommon County, Michigan: EnergyRosendaleRossie,Roswell, Georgia:

  4. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  5. Georgia: Data Center and Historic Municipal Building Go Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can consume 100 to 200 times more...

  6. EECBG Success Story: Georgia County Turning Industrial and Farm...

    Broader source: Energy.gov (indexed) [DOE]

    Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook EECBG Success Story: Atlanta Suburb Greases the Path to Savings...

  7. Agricultural Zoning as a Farmland Protection Tool in Georgia

    E-Print Network [OSTI]

    Rosemond, Amy Daum

    Agricultural Zoning as a Farmland Protection Tool in Georgia Prepared by: Emily Franzen, Staff Attorney UGA River Basin Center 706-583-0282 emilyf@uga.edu Table of Contents Introduction to Agricultural Exclusive Agricultural Zoning

  8. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Broader source: Energy.gov (indexed) [DOE]

    D.C. - U.S. Secretary of Energy Secretary Steven Chu will visit the Vogtle nuclear power plant in Waynesboro, Georgia, and Oak Ridge National Laboratory on Wednesday,...

  9. Jackson EMC- Residential Energy Efficiency Rebate Program (Georgia)

    Broader source: Energy.gov [DOE]

    Jackson Electric Membership Corporation (EMC) is an electric cooperative that serves 194,000 customers in 10 counties in northeast Georgia. To encourage its residential customers to adopt energy...

  10. U.S. Hydropower Resource Assessment - Georgia

    SciTech Connect (OSTI)

    A. M. Conner; B. N. Rinehart; J. E. Francfort

    1998-10-01T23:59:59.000Z

    The U.S. Department of Energy is developing an estimate of the undeveloped hydropower potential in the United States. For this purpose, the Idaho National Engineering and Environmental Laboratory developed a computer model called Hydropower Evaluation Software (HES). HES measures the undeveloped hydropower resources available in the United States, using uniform criteria for measurement. The software was developed and tested using hydropower information and data provided by the Southwestern Power Administration. It is a menu-driven program that allows the personal computer user to assign environmental attributes to potential hydropower sites, calculate development suitability factors for each site based on the environmental attributes present, and generate reports based on these suitability factors. This report describes the resource assessment results for the State of Georgia.

  11. Sustaining School Reform: Lessons from Georgia Education Policy and Evaluation Center, College of Education, University of Georgia

    E-Print Network [OSTI]

    Scott, Robert A.

    Sustaining School Reform: Lessons from Georgia Education Policy and Evaluation Center, College addressing lessons learned from two years of evaluation of Comprehensive School Reform (CSR) grant recipients implementing reform initiatives, in general. Background The Comprehensive School Reform (CSR) Program began

  12. Electrodeposition of high Mo content Ni-Mo alloys under forced convection

    SciTech Connect (OSTI)

    Podlaha, E.J.; Matlosz, M.; Landolt, D. (Ecole Polytechnique Federale de Lausanne, Lausanee (Switzerland). Dept. des materiaux)

    1993-10-01T23:59:59.000Z

    Bright, compact, adherent, metallic Ni-Mo alloys, containing over 48 wt % Mo have been electrodeposited from an aqueous solution. The Mo content, which is the highest achieved so far in induced codeposition of Ni-Mo, was determined by X-ray fluorescence spectroscopy. The absence of oxygen was verified by Auger electron spectroscopy. Electrodeposition experiments were performed on rotating cylinder electrodes and demonstrate that the Mo content of the alloy is strongly influenced by convective transport.

  13. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    household (2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to...

  14. State of Georgia CERTIFICATE OF EXEMPTION OF LOCAL HOTEL/MOTEL EXCISE TAX

    E-Print Network [OSTI]

    Teskey, Robert O.

    AND MOTEL OPERATORS: Effective April 2, 1987, Act Number 621 amending Official Code of Georgia Annotated for exemption of the local hotel/motel excise tax under Official Code of Georgia Annotated Chapter 48-13 (as Section 48-13-51 provides that Georgia state or local government officials or employees traveling

  15. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN

  16. Jefferson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtelInterias SolarJane Capital PartnersGeorgia: EnergyGeorgia: Energy

  17. US WNC MO Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1Stocks Nov-14TotalThe Outlook269,023Year69,023USWNC MO Site

  18. POLICY REGARDING SERVICE ANIMAL ACCESS TO UNIVERSITY OF GEORGIA FACILITIES,

    E-Print Network [OSTI]

    Arnold, Jonathan

    POLICY REGARDING SERVICE ANIMAL ACCESS TO UNIVERSITY OF GEORGIA FACILITIES, PROGRAMS, SERVICES AND ACTIVITIES This policy ("Policy") is to implement federal and state laws regarding access for service animals, for purposes of this Policy, "Service Animals" are collectively defined to include those that are defined

  19. Shipping and Receiving Dangerous Goods at Georgia Tech

    E-Print Network [OSTI]

    Shipping and Receiving Dangerous Goods at Georgia Tech Contacts: Biological Shipments: Shane://industry.gatech.edu/researchers/forms) GENERAL: The transportation of dangerous goods is regulated by a number of national and international of Dangerous Goods (Flash). PROCESS: 1) All shipments must have a Document Id number as well as a People

  20. Ambient habitat noise and vibration at the Georgia Aquarium

    E-Print Network [OSTI]

    Johnson, Michael T.

    Ambient habitat noise and vibration at the Georgia Aquarium P. M. Scheifele Department significant levels of background noise due to pumps and motors. This noise, together with pool architecture to quantify the ambient noise levels in the water from machine vibration and from in-air performance speaker

  1. Pulp and Paper Corrosion Symposium Georgia Tech Renewable Bioproducts Institute

    E-Print Network [OSTI]

    Das, Suman

    1 Pulp and Paper Corrosion Symposium Georgia Tech Renewable Bioproducts Institute November 2014 Digester Corrosion Margaret Gorog Federal Way, WA 2 · Chips plus a mixture of white and black liquor · The pulp is then blown from the bottom of the vessel into a blow tank · Corrosion occurs during filling

  2. School of Earth and Atmospheric Sciences Georgia Institute of Technology

    E-Print Network [OSTI]

    Weber, Rodney

    School of Earth and Atmospheric Sciences Georgia Institute of Technology Strategic Plan March 1 opportunities. Vision The vision of the School of Earth and Atmospheric Sciences is: To lead in innovative research and educate the future leaders in earth and atmospheric sciences for the 21st century, within

  3. GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT

    E-Print Network [OSTI]

    GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT Project No Members"). Section 2. Payment; Fixed Price Amount. 2.1 COMPANY agrees to pay GTRC $______ ("Fixed Price%) of the Fixed Price Amount to GTRC upon signing this Agreement. The advance payment will be applied against

  4. Li (Lily) Wang Address: 223 Statistics Building, University of Georgia, Athens, GA 30602-7952

    E-Print Network [OSTI]

    Wang, Lily

    ). A nonparametric analysis on the environmental Kuznets curve. Environmetrics, 22(3), 420­430. [9] Liu, X., Wang, L

  5. alvos contendo mo: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CaMoO4 crystal scintillators. A high sensitivity experiment to search for neutrinoless double beta decay of 100-Mo by using CaMoO4 scintillators is discussed. Annenkov, A N;...

  6. University of Georgia College of Agricultural and Environmental Sciences Alumni Association 2012 Nomination Form

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia College of Agricultural and Environmental Sciences Alumni Association 2012 in the College of Agricultural and Environmental Sciences Activity Center. To be displayed in an attractive

  7. adults georgia 2006-2007: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology, automatically supersede the contents of this manual. A GTA is a temporary Bennett, Gisele 3 Georgia Tech : Catalog 2006 2007 : Home 2006 -2007 General Catalog...

  8. Coweta-Fayette EMC- Residential Solar Water Heater Rebate Program (Georgia)

    Broader source: Energy.gov [DOE]

    Coweta-Fayette Electric Membership Corporation (EMC) provides electric and natural gas service to 58,000 customers in Georgia's Coweta, Fayette, Meriwether, Heard, Troop and Fulton counties.

  9. EcoCAR Challenge Georgia Institute of Technology

    E-Print Network [OSTI]

    Houston, Paul L.

    =rss&utm_source=feedburner&utm_medium=feed&utm_ca mpaign=Feed%3A+fastcompany%2Fheadlines+%28Fast+Company+H eadlines%29 October (10) BNET http://www.bnet.com/blog/electric-cars-formula-racing/ Green Beat http://venturebeat.com/2010/10/07/bad-news-for-electric-cars-people- dont-understand- them1 EcoCAR Challenge Georgia Institute of Technology Outreach Report - Appendix Date: 11/09/2010 #12

  10. Case Study: Georgia-Pacific Reduces Outside Fuel Costs and Increases Process Efficiency with Insulation Upgrade Program

    E-Print Network [OSTI]

    Jackson, D.

    A Georgia-Pacific plywood plant located in Madison, Georgia recently decided to insulate their steam lines for energy conservation, improved process efficiency and personnel protection. The goal of the project was to eliminate dependency...

  11. Assistant Professor of Gerontology The Gerontology Institute at Georgia State University invites applications for a tenure-track assistant

    E-Print Network [OSTI]

    Arnold, Jonathan

    lead to external funding. Georgia State University is the Southeast's leading urban researchAssistant Professor of Gerontology The Gerontology Institute at Georgia State University invites faculty representing numerous disciplines across the University. Further information about the Gerontology

  12. MoS2 Nanoribbons Thermoelectric Generators

    E-Print Network [OSTI]

    Arab, Abbas

    2015-01-01T23:59:59.000Z

    In this work, we have designed and simulated new thermoelectric generator based on monolayer and few-layer MoS2 nanoribbons. The proposed thermoelectric generator is composed of thermocouples made of both n-type and p-type MoS2 nanoribbon legs. Density Functional Tight-Binding Non-Equilibrium Green's Function (DFTB-NEGF) method has been used to calculate the transmission spectrum of MoS2 armchair and zigzag nanoribbons. Phonon transmission spectrum are calculated based on parameterization of Stillinger-Weber potential. Thermoelectric figure of merit, ZT, is calculated using these electronic and phonon transmission spectrum. Monolayer and bilayer MoS2 armchair nanoribbons are found to have the highest ZT value for p-type and n-type legs, repectively. Moreover, we have compared the thermoelectric current of doped monolayer MoS2 armchair nanoribbons and SZi thin films. Results indicate that thermoelectric current of MoS2 monolayer nanoribbons is several orders of magnitude higher than that of Si thin films.

  13. Archway Education Professional The University of Georgia is seeking a qualified candidate to serve as the Archway Education Professional in

    E-Print Network [OSTI]

    Arnold, Jonathan

    Archway Education Professional The University of Georgia is seeking a qualified candidate to serve as the Archway Education Professional in Dalton-Whitfield County, Georgia. The Archway Partnership was initiated with the University of Georgia. The Archway Education Professional is a UGA Public Service (Public Service Assistant

  14. EcoCAR by Georgia Tech efficiency through design and innovation

    E-Print Network [OSTI]

    Houston, Paul L.

    engineering competition sponsored by the Department of Energy and General Motors EcoCAR by Georgia Tech engineering competition sponsored by the Department of Energy and General Motors #12;GT EcoCAR GOALS: Increase by the Department of Energy and General Motors EcoCAR by Georgia Tech efficiency through design and innovation

  15. POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition in Licensing

    E-Print Network [OSTI]

    Arnold, Jonathan

    POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition the interests of the company over their responsibilities to UGARF and the University of Georgia. This Policy with this Policy. II. Policy In the course of intellectual property licensing, UGARF, through the work of TCO, may

  16. University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program Program Description As part of the University of Georgia (UGA) / University of Liverpool Partnership, we are providing for ongoing sponsored funding to continue the collaborations. Eligibility Criteria To be eligible

  17. Efficiency of Surveying, Baiting, and Trapping Wild Pigs at Fort Benning, Georgia Brian Lee Williams

    E-Print Network [OSTI]

    Ditchkoff, Steve

    Efficiency of Surveying, Baiting, and Trapping Wild Pigs at Fort Benning, Georgia by Brian Lee surveys, trapping efficiency, Fort Benning Copyright 2010 by Brian Lee Williams Approved by Stephen S This study, conducted at Fort Benning, Georgia, sought to develop more efficient ways of surveying

  18. INTRODUCTION TO SMART GRID Weichao Wang (UNCC), Yi Pan (Georgia State),

    E-Print Network [OSTI]

    Wang, Weichao

    INTRODUCTION TO SMART GRID Weichao Wang (UNCC), Yi Pan (Georgia State), Wenzhan Song (Georgia State) and Le Xie (Texas A&M) NSF SFS Project Team on "Integrated Learning Environment for Smart Grid Security" #12; Objective of National Power Grid Modernization Architecture of Smart Grid What is Smart Grid

  19. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  20. Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures

    E-Print Network [OSTI]

    Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing

  1. Ultra low resistance, non-alloyed ohmic contacts to n-InGaAs Ashish K. Baraskar1

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    Ultra low resistance, non-alloyed ohmic contacts to n-InGaAs Ashish K. Baraskar1 , Mark A. Wistey1 and fmax [1], [2]. Here we report the ultra-low specific contact resistivity (c) of non-alloyed in duration. These data indicate that the in-situ Mo gives ultra low Ohmic contacts, probably due

  2. Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors 

    E-Print Network [OSTI]

    Sinova, Jairo; Jungwirth, T.; Liu, X.; Sasaki, Y.; Furdyna, JK; Atkinson, WA; MacDonald, AH.

    2004-01-01T23:59:59.000Z

    description of ferromagnetism in many diluted magnetic semiconductors ~DMS?s!, ~Ga,M- n!As in particular.2,3 Exchange-coupling between local mo- ments and itinerant electrons should also contribute signifi- 0163-1829/2004/69~8!/085209~6!/$22.50 69 085209... suggests g contributes significantly to the damping rate of the g the theoretical Gilbert coefficient with the values typical critical current for spin-transfer magnetization s low as ;105 A cm22. PACS number~s!: 73.20.Mf, 73.40.2c, 85.75.2d curate...

  3. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  4. Prompt {gamma}-ray spectroscopy of the {sup 104}Mo and {sup 108}Mo fission fragments

    SciTech Connect (OSTI)

    Guessous, A.; Schulz, N.; Bentaleb, M.; Lubkiewicz, E. [Centre de Recherches Nucleaires, Institut National de Physique Nucleaire et de Physique des Particules, Centre National de la Recherche Scientifique, Universite Louis Pasteur, 67037 Strasbourg (France)] [Centre de Recherches Nucleaires, Institut National de Physique Nucleaire et de Physique des Particules, Centre National de la Recherche Scientifique, Universite Louis Pasteur, 67037 Strasbourg (France); Durell, J.L.; Pearson, C.J.; Phillips, W.R.; Shannon, J.A.; Urban, W.; Varley, B.J. [Department of Physics, University of Manchester, M13 9PL (United Kingdom)] [Department of Physics, University of Manchester, M13 9PL (United Kingdom); Ahmad, I.; Lister, C.J.; Morss, L.R.; Nash, K.L.; Williams, C.W. [Argonne National Laboratory, Argonne, Illinois 60439 (United States)] [Argonne National Laboratory, Argonne, Illinois 60439 (United States); Khazrouni, S. [Laboratoire de Physique Nucleaire Appliquee, Faculte des Sciences, Kenitra, Maroc (France)] [Laboratoire de Physique Nucleaire Appliquee, Faculte des Sciences, Kenitra, Maroc (France)

    1996-03-01T23:59:59.000Z

    The level structures of the neutron-rich {sup 104}Mo and {sup 108}Mo nuclei have been investigated by observing prompt {gamma} rays emitted in the spontaneous fission of {sup 248}Cm with the EUROGAM spectrometer. Levels with spins up to 12{h_bar} have been observed and {gamma} branching obtained. The data can be satisfactorily described when {sup 104,108}Mo are considered as axially symmetric nuclei: in {sup 104}Mo, rotational bands based on the ground state, the one-phonon and the two-phonon {gamma}-vibrational states and a quasiparticle state have been observed, whereas in {sup 108}Mo the information is limited to the yrast band and the one phonon {gamma} band. {copyright} {ital 1996 The American Physical Society.}

  5. Tunable MoS{sub 2} bandgap in MoS{sub 2}-graphene heterostructures

    SciTech Connect (OSTI)

    Ebnonnasir, Abbas [Department of Mechanical Engineering and Materials Science Program, Colorado School of Mines, Golden, Colorado 80401 (United States); Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States); Narayanan, Badri; Ciobanu, Cristian V., E-mail: cciobanu@mines.edu, E-mail: kodambaka@ucla.edu [Department of Mechanical Engineering and Materials Science Program, Colorado School of Mines, Golden, Colorado 80401 (United States); Kodambaka, Suneel, E-mail: cciobanu@mines.edu, E-mail: kodambaka@ucla.edu [Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States)

    2014-07-21T23:59:59.000Z

    Using density functional theory calculations with van der Waals corrections, we investigated how the interlayer orientation affects the structure and electronic properties of MoS{sub 2}-graphene bilayer heterostructures. Changing the orientation of graphene with respect to MoS{sub 2} strongly influences the type and the value of the electronic bandgap in MoS{sub 2}, while not significantly altering the binding energy between the layers or the interlayer spacing. We show that the physical origin of this tunable bandgap arises from variations in the S–S interplanar distance (MoS{sub 2} thickness) with the interlayer orientation, variations which are caused by electron transfer away from the Mo–S bonds.

  6. Lee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:Landowners and Wind EnergyIndiana: EnergyLands inLechee,Georgia: Energy

  7. Liberty County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:Landowners and Wind EnergyIndiana:NewJumpLiberia: Energy ResourcesGeorgia:

  8. Macon County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:LandownersLuther, Oklahoma:EnergyECO AugerMaanGeorgia: Energy Resources Jump

  9. Madison County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:LandownersLuther, Oklahoma:EnergyECOFlorida: Energy Resources Jump to:Georgia:

  10. Georgia/Wind Resources/Full Version | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualPropertyd8c-a9ae-f8521cbb8489InformationFrenchtown,JumpValleyTopicsGeorgia/Wind

  11. Burke County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomassSustainable andBucoda,Burke County, Georgia: Energy Resources Jump to:

  12. Calhoun County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomassSustainableCSL Gas Recovery Biomass16 2013 Next »Georgia: Energy Resources

  13. Lighting Up Georgia Convenience Stores | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't YourTransport(FactDepartment ofLetterEconomy and Emissions Estimates |Park ServiceUp Georgia

  14. Carroll County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  15. City of Covington, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

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  16. Sandy Springs, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  17. Georgia: Data Center and Historic Municipal Building Go Green | Department

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed off Energy.gov.Energy02.pdf7 OPAM Flash2011-37 OPAM DOEof Energy Georgia: Data Center and

  18. Jeff Davis County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtelInterias SolarJane Capital PartnersGeorgia: Energy Resources Jump to:

  19. Harris County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG| OpenInformation Handbook forHansungHarneyHarrah,County, Georgia:

  20. Heard County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG|Information OpenEIHas BeenLegalHeard County, Georgia: Energy

  1. Worth County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy ResourcesWoodsCenters JumpGeorgia: Energy Resources

  2. Pine Lake, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal PwerPerkins County, Nebraska: Energy ResourcesPicketGeothermal ProjectLake, Georgia: Energy

  3. Pine Mountain, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal PwerPerkins County, Nebraska: Energy ResourcesPicketGeothermal ProjectLake, Georgia:

  4. Georgia: Data Center and Historic Municipal Building Go Green | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdf Flash2006-52.pdf0.pdfDepartmentCounsel Law Studentof Energy Georgia: Data Center

  5. Central Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof EnergyInnovation inOpenadd: China DatangCentral El tricaCentral Georgia El Member

  6. City of Barnesville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof EnergyInnovationin Urban Transport |City of Ames,Barnesville, Georgia (Utility

  7. City of East Point, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof EnergyInnovationin Urban Transport |CityCity of Dayton,City of East Point, Georgia

  8. Georgia Department of Natural Resources (GDNR) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2,AUDIT REPORTEnergyFarms A SUK Place:Georgia Department of Natural

  9. Greene County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG ContractingGreenOrder Jump to:Greenburgh, New York:Georgia: Energy

  10. Gwinnett County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG| Open EnergyGuntersville Electric BoardGwinnett County, Georgia:

  11. Stephens County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt LtdShawangunk,SoutheastSt.Steep Gradient Flume Jump to:HIFStep-by-StepGeorgia:

  12. Stone Mountain, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  13. Echols County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazel Crest, Illinois: EnergyEastport, Maine:Eau ClaireEchols County, Georgia:

  14. Effingham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazel Crest, Illinois:Edinburgh University aka WaveKansas:New York:Georgia:

  15. Oconee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall,Missouri: EnergyExcellence SeedNunn,andOasysOchiltree County, Texas:Georgia:

  16. Marion County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:LandownersLuther,Jemez PuebloManteca,Marana,MariesWave)Georgia: Energy

  17. Miller County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  18. Mitchell County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville,Missoula, Montana: Energy ResourcesMitchell County, Georgia: Energy

  19. Crisp County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew|CoreCp Holdings LlcCrenshawCrete,Crisp County, Georgia:

  20. Decatur County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOE Facility Database DataDatatechnicNewDeaf Smith County, Texas:DearbornGeorgia:

  1. Thomas County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries PvtStratosolarTharaldson Ethanol LLCEnergyo Jump to:Thermosolar JumpGeorgia: Energy

  2. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurTheBrookhaven NationalRegionalsResearch »Funding OpportunityGalleryGenomeGeorgia

  3. Middle Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup |JilinLu anMicrogreen Polymers Inc Jump to:Jump to:Middle Georgia El

  4. Atkinson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcatAntrimArkansasAshford,AsotinAstonInformation Georgia

  5. Workplace Charging Challenge Partner: Georgia Institute of Technology |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: SinceDevelopment | Department ofPartnershipsAngieTerriDepartmentDepartment of Energy Georgia

  6. City of Monroe, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty EditCalifornia:PowerCER.png El CER esDatasetCity of Holyoke,Monroe, Georgia (Utility

  7. Morgan County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville,Missoula,Monterey County,Monticello,Oklahoma:In EnergyGeorgia: Energy

  8. Mountain Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville,Missoula,MontereyHill,Spurr Geothermal Project JumpPark, Georgia:

  9. Bacon County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomass Conversions Inc JumpIM 2011-003 Jump to: JumpBPLColorado:Georgia: Energy

  10. Baker County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomass Conversions Inc JumpIM 2011-003 Jump to:Bahamas:Georgia: Energy Resources

  11. Baldwin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  12. Barrow County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  13. Bartow County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  14. Bleckley County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  15. Quitman County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  16. Randolph County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  17. Rockdale County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  18. Floyd County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump to:ar-80m.pdfFillmoreGabbs Valley Area (DOE GTP)TheFloyd County, Georgia:

  19. Franklin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  20. Georgia's 10th congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump1946865°,Park,2005) | OpenInformation Georgia's 10th congressional

  1. Georgia's 11st congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump1946865°,Park,2005) | OpenInformation Georgia's 10th

  2. Georgia's 11th congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump1946865°,Park,2005) | OpenInformation Georgia's 10thInformation

  3. Georgia's 12th congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump1946865°,Park,2005) | OpenInformation Georgia's

  4. Georgia's 13th congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump1946865°,Park,2005) | OpenInformation Georgia'sInformation

  5. Twiggs County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown of Ladoga, IndianaTurtle Airships Jump to:Twiggs County, Georgia: Energy

  6. Clarke County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformation SmyrnaNew York: EnergyWashington: Energy Resources3Georgia:

  7. Clinch County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformation SmyrnaNewClayClearSpotYork:TrustClinch County, Georgia:

  8. Coffee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew York: EnergyCoeur d Alene Fiber Fuels Inc akaGeorgia:

  9. Elevated Temperature Tensile Tests on DU–10Mo Rolled Foils

    SciTech Connect (OSTI)

    Jason Schulthess

    2014-09-01T23:59:59.000Z

    Tensile mechanical properties for uranium-10 wt.% molybdenum (U–10Mo) foils are required to support modeling and qualification of new monolithic fuel plate designs. It is expected that depleted uranium-10 wt% Mo (DU–10Mo) mechanical behavior is representative of the low enriched U–10Mo to be used in the actual fuel plates, therefore DU-10Mo was studied to simplify material processing, handling, and testing requirements. In this report, tensile testing of DU-10Mo fuel foils prepared using four different thermomechanical processing treatments were conducted to assess the impact of foil fabrication history on resultant tensile properties.

  10. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  11. GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

    SciTech Connect (OSTI)

    Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

  12. Wetting of metals and glasses on Mo

    SciTech Connect (OSTI)

    Saiz, Eduardo; Tomsia, Antoni P.; Saiz, Eduardo; Lopez-Esteban, Sonia; Benhassine, Mehdi; de Coninck, Joel; Rauch, Nicole; Ruehle, Manfred

    2008-01-08T23:59:59.000Z

    The wetting of low melting point metals and Si-Ca-Al-Ti-O glasses on molybdenum has been investigated. The selected metals (Au, Cu, Ag) form a simple eutectic with Mo. Metal spreading occurs under nonreactive conditions without interdiffusion or ridge formation. The metals exhibit low (non-zero) contact angles on Mo but this requires temperatures higher than 1100 C in reducing atmospheres in order to eliminate a layer of adsorbed impurities on the molybdenum surface. By controlling the oxygen activity in the furnace, glass spreading can take place under reactive or nonreactive conditions. We have found that in the glass/Mo system the contact angle does not decrease under reactive conditions. In all cases, adsorption from the liquid seems to accelerate the diffusivity on the free molybdenum surface.

  13. Oxidation, Reduction, and Condensation of Alcohols over (MO3)3 (M=Mo, W) Nanoclusters

    SciTech Connect (OSTI)

    Fang, Zongtang; Li, Zhenjun; Kelley, Matthew S.; Kay, Bruce D.; Li, Shenggang; Hennigan, Jamie M.; Rousseau, Roger J.; Dohnalek, Zdenek; Dixon, David A.

    2014-10-02T23:59:59.000Z

    The reactions of deuterated methanol, ethanol, 1-propanol, 1-butanol, 2-propanol, 2-butanol and t-butanol over cyclic (MO3)3 (M = Mo, W) clusters were studied experimentally with temperature programmed desorption (TPD) and theoretically with coupled cluster CCSD(T) theory and density functional theory. The reactions of two alcohols per M3O9 cluster are required to provide agreement with experiment for D2O release, dehydrogenation and dehydration. The reaction begins with the elimination of water by proton transfers and forms an intermediate dialkoxy species which can undergo further reaction. Dehydration proceeds by a ? hydrogen transfer to a terminal M=O. Dehydrogenation takes place via an ? hydrogen transfer to an adjacent MoVI = O atom or a WVI metal center with redox involved for M = Mo and no redox for M = W. The two channels have comparable activation energies. H/D exchange to produce alcohols can take place after olefin is released or via the dialkoxy species depending on the alcohol and the cluster. The Lewis acidity of the metal center with WVI being larger than MoVI results in the increased reactivity of W3O9 over Mo3O9 for dehydrogenation and dehydration.

  14. Air Quality and Road Emission Results for Fort Stewart, Georgia

    SciTech Connect (OSTI)

    Kirkham, Randy R.; Driver, Crystal J.; Chamness, Mickie A.; Barfuss, Brad C.

    2004-02-02T23:59:59.000Z

    The Directorate of Public Works Environmental & Natural Resources Division (Fort Stewart /Hunter Army Airfield) contracted with the Pacific Northwest National Laboratory (PNNL) to monitor particulate matter (PM) concentrations on Fort Stewart, Georgia. The purpose of this investigation was to establish a PM sampling network using monitoring equipment typically used in U.S. Environmental Protection Agency (EPA) ''saturation sampling'', to determine air quality on the installation. In this initial study, the emphasis was on training-generated PM, not receptor PM loading. The majority of PM samples were 24-hr filter-based samples with sampling frequency ranging from every other day, to once every six days synchronized with the EPA 6th day national sampling schedule. Eight measurement sites were established and used to determine spatial variability in PM concentrations and evaluate whether fluctuations in PM appear to result from training activities and forest management practices on the installation. Data collected to date indicate the average installation PM2.5 concentration is lower than that of nearby urban Savannah, Georgia. At three sites near the installation perimeter, analyses to segregate PM concentrations by direction of air flow across the installation boundary indicate that air (below 80 ft) leaving the installation contains less PM2.5 than that entering the installation. This is reinforced by the observation that air near the ground is cleaner on average than the air at the top of the canopy.

  15. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  16. sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage

    SciTech Connect (OSTI)

    Waddell, Michael

    2014-09-30T23:59:59.000Z

    This study focuses on evaluating the feasibility and suitability of using the Jurassic/Triassic (J/TR) sediments of the South Georgia Rift basin (SGR) for CO2 storage in southern South Carolina and southern Georgia The SGR basin in South Carolina (SC), prior to this project, was one of the least understood rift basin along the east coast of the U.S. In the SC part of the basin there was only one well (Norris Lightsey #1) the penetrated into J/TR. Because of the scarcity of data, a scaled approach used to evaluate the feasibility of storing CO2 in the SGR basin. In the SGR basin, 240 km (~149 mi) of 2-D seismic and 2.6 km2 3-D (1 mi2) seismic data was collected, process, and interpreted in SC. In southern Georgia 81.3 km (~50.5 mi) consisting of two 2-D seismic lines were acquired, process, and interpreted. Seismic analysis revealed that the SGR basin in SC has had a very complex structural history resulting the J/TR section being highly faulted. The seismic data is southern Georgia suggest SGR basin has not gone through a complex structural history as the study area in SC. The project drilled one characterization borehole (Rizer # 1) in SC. The Rizer #1 was drilled but due to geologic problems, the project team was only able to drill to 1890 meters (6200 feet) instead of the proposed final depth 2744 meters (9002 feet). The drilling goals outlined in the original scope of work were not met. The project was only able to obtain 18 meters (59 feet) of conventional core and 106 rotary sidewall cores. All the conventional core and sidewall cores were in sandstone. We were unable to core any potential igneous caprock. Petrographic analysis of the conventional core and sidewall cores determined that the average porosity of the sedimentary material was 3.4% and the average permeability was 0.065 millidarcy. Compaction and diagenetic studies of the samples determined there would not be any porosity or permeability at depth in SC. In Georgia there appears to be porosity in the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

  17. Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation...

    Broader source: Energy.gov (indexed) [DOE]

    Ga. - Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help...

  18. Mo Supply Chain for Nuclear Medicine Ladimer S. Nagurney

    E-Print Network [OSTI]

    Nagurney, Anna

    The 99 Mo Supply Chain for Nuclear Medicine Ladimer S. Nagurney Department of Electrical November 13, 2012 #12;Nuclear Medicine: Meeting Patient Needs with 99 Mo Ladimer S. Nagurney The 99 Mo Supply Chain #12;Background and Motivation Study of Nuclear Medicine Supply Chains is a combination

  19. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAs­InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  20. Capacity and Energy Payments to Small Power Producers and Cogenerators Under PURPA Docket (Georgia)

    Broader source: Energy.gov [DOE]

    Docket No. 4822 was enacted by the Georgia Public Service Commission in accordance with The Public Utility Regulatory Policies Act of 1978 (PURPA) that was enacted to promote conservation and to...

  1. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia

    SciTech Connect (OSTI)

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01T23:59:59.000Z

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

  2. UMass INFORMSProfessor Anna Nagurney Dr. Garrow is an Associate Professor at the Georgia Institute of

    E-Print Network [OSTI]

    Nagurney, Anna

    at the Georgia Institute of Technology. She earned her Ph.D. at Northwestern University, with an emphasis. The study considers extensions of this methodology to Generalized Extreme Value (GEV) discrete choice models Management Models with Censored Data" " #12;

  3. Sales Tax Exemption for Energy-Efficient Products (Sales Tax Holiday) (Georgia))

    Broader source: Energy.gov [DOE]

    Georgia allows an annual state and local sales tax exemption on Energy Star products of $1,500 or less per product, purchased for non-commercial home or personal use.The 100% exemption from the...

  4. EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

  5. Why Should I Study Engineering? Georgia Southern offers three engineering disciplines Civil, Electrical and Mechanical.

    E-Print Network [OSTI]

    Hutcheon, James M.

    , Electrical and Mechanical. Engineers plan, design, develop, test and analyze infrastructure components (CivilWhy Should I Study Engineering? Georgia Southern offers three engineering disciplines ­ Civil), electronic systems (Electrical), and systems with moving parts (Mechanical) that affect and improve people

  6. GEORGIA INSTITUTE OF TECHNOLOGY COLLEGE OF ENGINEERING 1 College of Engineering

    E-Print Network [OSTI]

    Li, Mo

    Electrical and Computer Engineering Industrial and Systems Engineering Materials Science and Engineering and Biomolecular Engineering Civil and Environmental Engineering Electrical and Computer Engineering IndustrialGEORGIA INSTITUTE OF TECHNOLOGY · COLLEGE OF ENGINEERING 1 College of Engineering Aerospace

  7. Energy Conservation Recommendations, Implementation Costs, and Projected Paybacks for Georgia's Targeted Schools and Hospitals Conservation Program

    E-Print Network [OSTI]

    Brown, M. L.; Moore, D. M.

    1988-01-01T23:59:59.000Z

    During the past year the Georgia Tech Research Institute performed technical assistance studies on over 100 school and hospital buildings under a program funded by the Governor's Office of Energy Resources. This program is known as the Targeted...

  8. Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel Funds

    E-Print Network [OSTI]

    Sherrill, David

    Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel funds may be used to meet any remaining costs not covered by the research advisor, GSF award___________________________________________________ Dates of Conference_____________________________________________________ Total estimated costs

  9. GEORGIA INSTITUTE OF TECHNOLOGY FABRICATED PROPERTY REPORT Revised 07-2014

    E-Print Network [OSTI]

    Li, Mo

    GEORGIA INSTITUTE OF TECHNOLOGY FABRICATED PROPERTY REPORT Revised 07-2014 TO: Property Control: ____________________________________________ Phone: _______________ COST OF PROPERTY Materials or Component Parts $ _______________ External Labor Costs $ _______________ Transportation $ _______________ Other Costs (explain on back

  10. Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel Funds

    E-Print Network [OSTI]

    Sherrill, David

    Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel funds may be used to meet any remaining costs not covered by the research advisor, SGA award_____________________________________________________ Total estimated costs for attending conference Transportation $_______________ Other Travel

  11. Synthesis of a jojoba bean disaccharide Alexander Kornienko, Georgia Marnera, Marc d'Alarcao *

    E-Print Network [OSTI]

    d'Alarcao, Marc

    Note Synthesis of a jojoba bean disaccharide Alexander Kornienko, Georgia Marnera, Marc d 1998 Abstract A synthesis of the disaccharide recently isolated from jojoba beans, 2-O Science Ltd. All rights reserved Keywords: chiro-Inositol; Jojoba beans; Glycosylation; Synthesis

  12. Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report

    SciTech Connect (OSTI)

    SC Energy Office: Southern Alliance for Clean Energy

    2013-02-12T23:59:59.000Z

    This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

  13. Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates

    SciTech Connect (OSTI)

    Hu, Prof Pingan [Harbin Institute of Technology; Wang, Lifeng [Harbin Institute of Technology; Yoon, Mina [ORNL; Zhang, Jia [Harbin Institute of Technology; Feng, Wei [Harbin Institute of Technology; Wang, Xiaona [Harbin Institute of Technology; Wen, Zhenzhong [Harbin Institute of Technology; Idrobo Tapia, Juan C [ORNL; Miyamoto, Yoshiyuki [National Institute of Advanced Industrial Science and Technology, Japan; Geohegan, David B [ORNL; Xiao, Kai [ORNL

    2013-01-01T23:59:59.000Z

    The first GaS nanosheet-based photodetectors are demonstrated on both mechanically rigid and flexible substrates. Highly-crystalline, exfoliated GaS nanosheets are promising for optoelectronics due to strong absorption in the UV-visible wavelength region. Photocurrent measurements of GaS nanosheet photodetectors made on SiO2/Si substrates and flexible polyethylene terephthalate (PET) substrates exhibit a photo-responsivity at 254nm up to 4.2 AW-1 and 19.2 AW-1, respectively, which exceeds that of graphene, MoS2, or other 2D materials-based devices. Additionally, the linear dynamic range of the devices on SiO2/Si and PET substrates are 97.7dB and 78.73 dB, respectively. Both surpass that of currently-exploited InGaAs photodetectors (66 dB). Theoretical modeling of the electronic structures indicates that the reduction of the effective mass at the valence band maximum (VBM) with decreasing sheet thickness enhances the carrier mobility of the GaS nanosheets, contributing to the high photocurrents. Double-peak VBMs are theoretically predicted for ultrathin GaS nanosheets (thickness less than 5 monolayers), which is found to promote photon absorption. These theoretical and experimental results show that GaS nanosheets are promising materials for high performance photodetectors on both conventional silicon and flexible substrates.

  14. Role of SrMoO{sub 4} in Sr{sub 2}MgMoO{sub 6} synthesis

    SciTech Connect (OSTI)

    Vasala, S.; Yamauchi, H. [Laboratory of Inorganic Chemistry, Department of Chemistry, School of Chemical Technology, Aalto University, P.O. Box 16100, FI-00076 Aalto (Finland); Karppinen, M., E-mail: maarit.karppinen@aalto.f [Laboratory of Inorganic Chemistry, Department of Chemistry, School of Chemical Technology, Aalto University, P.O. Box 16100, FI-00076 Aalto (Finland)

    2011-05-15T23:59:59.000Z

    Here we investigate the elemental and phase compositions during the solid-state synthesis of the promising SOFC-anode material, Sr{sub 2}MgMoO{sub 6}, and demonstrate that molybdenum does not notably evaporate under the normal synthesis conditions with temperatures up to 1200 {sup o}C due to the formation of SrMoO{sub 4} as an intermediate product at low temperatures, below 600 {sup o}C. However, partial decomposition of the Sr{sub 2}MgMoO{sub 6} phase becomes evident at the higher temperatures ({approx}1500 {sup o}C). The effect of SrMoO{sub 4} on the electrical conductivity of Sr{sub 2}MgMoO{sub 6} is evaluated by preparing a series of Sr{sub 2}MgMoO{sub 6} samples with different amounts of additional SrMoO{sub 4}. Under the reducing operation conditions of an SOFC anode the insulating SrMoO{sub 4} phase is apparently reduced to the highly conductive SrMoO{sub 3} phase. Percolation takes place with 20-30 wt% of SrMoO{sub 4} in a Sr{sub 2}MgMoO{sub 6} matrix, with a notable increase in electrical conductivity after reduction. Conductivity values of 14, 60 and 160 S/cm are determined at 800 {sup o}C in 5% H{sub 2}/Ar for the Sr{sub 2}MgMoO{sub 6} samples with 30, 40 and 50 wt% of added SrMoO{sub 4}, respectively. -- Graphical abstract: SrMoO{sub 4} is formed at low temperatures during the synthesis of Sr{sub 2}MgMoO{sub 6}, which prevents the volatilization of Mo from typical precursor mixtures of this promising SOFC anode material. SrMoO{sub 4} is insulating and it is often found as an impurity in Sr{sub 2}MgMoO{sub 6} samples. It is however readily reduced to highly conducting SrMoO{sub 3}. Composites of Sr{sub 2}MgMoO{sub 6} and SrMoO{sub 3} show increased electrical conductivities compared to pure Sr{sub 2}MgMoO{sub 6} under the reductive operation conditions of an SOFC anode. Display Omitted Highlights: {yields} Sr{sub 2}MgMoO{sub 6} is a promising SOFC anode material. {yields} During the Sr{sub 2}MgMoO{sub 6} synthesis SrMoO{sub 4} is formed at low temperatures. {yields} Formation of SrMoO{sub 4} effectively prevents volatilization of Mo at high temperatures. {yields} Insulating SrMoO{sub 4} reduces to highly conductive SrMoO{sub 3} under SOFC-anode conditions. {yields} Composites of Sr{sub 2}MgMoO{sub 6} and SrMoO{sub 3} show high electrical conductivities.

  15. Development of CaMoO4 crystal scintillators for double beta decay experiment with 100-Mo

    E-Print Network [OSTI]

    A. N. Annenkov; O. A. Buzanov; F. A. Danevich; A. Sh. Georgadze; S. K. Kim; H. J. Kim; Y. D. Kim; V. V. Kobychev; V. N. Kornoukhov; M. Korzhik; J. I. Lee; O. Missevitch; V. M. Mokina; S. S. Nagorny; A. S. Nikolaiko; D. V. Poda; R. B. Podviyanuk; D. J. Sedlak; O. G. Shkulkova; J. H. So; I. M. Solsky; V. I. Tretyak; S. S. Yurchenko

    2007-07-10T23:59:59.000Z

    Energy resolution, alpha/beta ratio, pulse-shape discrimination for gamma rays and alpha particles, temperature dependence of scintillation properties, and radioactive contamination were studied with CaMoO4 crystal scintillators. A high sensitivity experiment to search for neutrinoless double beta decay of 100-Mo by using CaMoO4 scintillators is discussed.

  16. State of Georgia quarterly AIP Implementation Report: October--December 1995

    SciTech Connect (OSTI)

    NONE

    1996-01-19T23:59:59.000Z

    The objective of this report is to ensure the citizens of Georgia that health, safety and the environment are being protected through existing DOE programs at the Savannah River Site (SRS), through a vigorous program of independent monitoring and oversight by Georgia officials. SRS emergency plans will be annually reviewed and updated. Environmental monitoring will be conducted of surface water and related media, ground water, air, crops, milk, drinking water, soils and vegetation.

  17. Georgia Institute of Technology chilled water system evaluation and master plan

    SciTech Connect (OSTI)

    NONE

    1996-05-15T23:59:59.000Z

    As the host of the Olympic Village for the 1996 Atlanta Olympics, Georgia Tech has experienced a surge in construction activities over the last three years. Over 1.3 million square feet of new buildings have been constructed on the Georgia Tech campus. This growth has placed a strain on the Georgia Tech community and challenged the facilities support staff charged with planning and organizing utility services. In concert with Olympic construction, utility planners have worked to ensure long term benefits for Georgia Tech facilities while meeting the short term requirements of the Olympic Games. The concentration of building construction in the northwest quadrant of the campus allowed planners to construct a satellite chilled water plant to serve the needs of this area and provide the opportunity to integrate this section of the campus with the main campus chilled water system. This assessment and master plan, funded in part by the US Department of Energy, has evaluated the chilled water infrastructure at Georgia Tech, identified ongoing problems and made recommendations for long term chilled water infrastructure development and efficiency improvements. The Georgia Tech office of Facilities and RDA Engineering, Inc. have worked together to assemble relevant information and prepare the recommendations contained in this document.

  18. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect

  19. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    E-Print Network [OSTI]

    Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

    2010-08-24T23:59:59.000Z

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  20. Re Effects on Phase Stability and Mechanical Properties of MoSS+Mo3Si+Mo5SiB2 alloys

    SciTech Connect (OSTI)

    Yang, Ying [ORNL; Bei, Hongbin [ORNL; George, Easo P [ORNL; Tiley, Jaimie [Air Force Research Laboratory, Wright-Patterson AFB, OH

    2013-01-01T23:59:59.000Z

    Because of their high melting points and good oxidation resistance Mo-Si-B alloys are of interest as potential ultrahigh-temperature structural materials. But their major drawbacks are poor ductility and fracture toughness at room temperature. Since alloying with Re has been suggested as a possible solution, we investigate here the effects of Re additions on the microstructure and mechanical properties of a ternary alloy with the composition Mo-12.5Si-8.5B (at.%). This alloy has a three-phase microstructure consisting of Mo solid-solution (MoSS), Mo3Si, and Mo5SiB2 and our results show that up to 8.4 at.% Re can be added to it without changing its microstructure or forming any brittle phase at 1600 C. Three-point bend tests using chevron-notched specimens showed that Re did not improve fracture toughness of the three-phase alloy. Nanoindentation performed on the MoSS phase in the three-phase alloy showed that Re increases Young s modulus, but does not lower hardness as in some Mo solid solution alloys. Based on our thermodynamic calculations and microstructural analyses, the lack of a Re softening effect is attributed to the increased Si levels in the Re-containing MoSS phase since Si is known to increase its hardness. This lack of softening is possibly why there is no Re-induced improvement in fracture toughness.

  1. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  2. Case Study: Georgia-Pacific Reduces Outside Fuel Costs and Increases Process Efficiency with Insulation Upgrade Program 

    E-Print Network [OSTI]

    Jackson, D.

    1997-01-01T23:59:59.000Z

    on purchased fuel. Georgia-Pacific realized immediate and significant results and reduced fuel cost by about one third over a one year period....

  3. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1

    E-Print Network [OSTI]

    Nabben, Reinhard

    Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence

  4. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  5. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01T23:59:59.000Z

    T. Henderson, “High- Speed InGaP/GaAs HBT’s Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite

  6. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  7. Structural and energy characteristics of native vacancy-type defects in the biaxially stressed GaN lattice

    SciTech Connect (OSTI)

    Bez'yazychnaya, T. V.; Zelenkovskii, V. M.; Gurskii, A. L.; Ryabtsev, G. I. [National Academy of Sciences of Belarus, Stepanov Institute of Physics (Belarus)], E-mail: ryabtsev@dragon.bas-net.by

    2008-11-15T23:59:59.000Z

    For biaxially stressed GaN clusters, the structure, charges, and energies of the formation of intrinsic Ga and N vacancies are calculated by the quantum-chemical method in the SCF MO LCAO approximation taking into account relaxation of the crystalline surroundings. It is established that the use of substrates introducing compressive or tensile stresses into the epitaxial layer affects the concentrations of intrinsic vacancy-type point defects. This effect most clearly manifests itself in the nitrogen sublattice in the GaN crystal lattice, especially in the case of its tension, i.e., during the epitaxial grown of GaN on the Si substrate. Redistribution of the electron density in the defect region in the case of lattice compression or tension can be the cause of variation in the location of electronic levels of defects in the band gap of the crystal.

  8. Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta

    E-Print Network [OSTI]

    Svane, Axel Torstein

    69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure

  9. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region

  10. Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA tpalacios@mit.edu; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors

  11. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  12. Coordinator of Operations The University of Georgia is seeking a qualified candidate to serve as the Coordinator of Operations with the

    E-Print Network [OSTI]

    Arnold, Jonathan

    with the University of Georgia. The Archway Partnership has received funding from the Board of Regents to continueCoordinator of Operations The University of Georgia is seeking a qualified candidate to serve to bring the University of Georgia's expertise to communities and to facilitate community interaction

  13. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    to Georgia soils. Soil test phosphorous level by itself is not adequate to determine environmental risk by applying less manure, adding buffers or applying other management procedures. Sources of Risk and Transport and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2004 COMMERCIAL EGG TIP... GEORGIA'S PHOSPHOROUS INDEX

  14. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    to Georgia soils. Soil test phosphorous level by itself is not adequate to determine environmental risk by applying less litter, adding buffers or applying other management procedures. Sources of Risk and Transport and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2004 BROILER TIP... GEORGIA'S PHOSPHOROUS INDEX

  15. Beta decay of Ga-62 

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

  16. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  17. Upcoming Management and Operating (M&O) Contract Competition...

    National Nuclear Security Administration (NNSA)

    Upcoming Management and Operating (M&O) Contract Competition | National Nuclear Security Administration Facebook Twitter Youtube Flickr RSS People Mission Managing the Stockpile...

  18. MoRu/Be multilayers for extreme ultraviolet applications

    DOE Patents [OSTI]

    Bajt, Sasa C. (Livermore, CA); Wall, Mark A. (Stockton, CA)

    2001-01-01T23:59:59.000Z

    High reflectance, low intrinsic roughness and low stress multilayer systems for extreme ultraviolet (EUV) lithography comprise amorphous layers MoRu and crystalline Be layers. Reflectance greater than 70% has been demonstrated for MoRu/Be multilayers with 50 bilayer pairs. Optical throughput of MoRu/Be multilayers can be 30-40% higher than that of Mo/Be multilayer coatings. The throughput can be improved using a diffusion barrier to make sharper interfaces. A capping layer on the top surface of the multilayer improves the long-term reflectance and EUV radiation stability of the multilayer by forming a very thin native oxide that is water resistant.

  19. Interdiffusion between Zr Diffusion Barrier and U-Mo Alloy

    SciTech Connect (OSTI)

    K. Huang; Y. Park; Y. H. Sohn

    2012-12-01T23:59:59.000Z

    U-Mo alloys are being developed as low enrichment uranium fuels under the Reduced Enrichment for Research and Test Reactor (RERTR) program. Significant reactions have been observed between U-Mo fuels and Al or Al alloy matrix. Refractory metal Zr has been proposed as barrier material to reduce the interactions. In order to investigate the compatibility and barrier effects between U-Mo alloy and Zr, solid-to-solid U-10wt.%Mo vs. Zr diffusion couples were assembled and annealed at 600, 700, 800, 900 and 1000 °C for various times. The microstructures and concentration profiles due to interdiffusion and reactions were examined via scanning electron microscopy and electron probe microanalysis, respectively. Intermetallic phase Mo2Zr was found at the interface and its population increased when annealing temperature decreased. Diffusion paths were also plotted on the U-Mo-Zr ternary phase diagrams with good consistency. The growth rate of interdiffusion zone between U-10wt.%Mo and Zr was also calculated under the assumption of parabolic diffusion, and was determined to be about 103 times lower than the growth rate of diffusional interaction layer found in diffusion couples U-10wt.%Mo vs. Al or Al-Si alloy. Other desirable physical properties of Zr as barrier material, such as neutron adsorption rate, melting point and thermal conductivity are presented as supplementary information to demonstrate the great potential of Zr as the diffusion barrier for U-Mo fuel systems in RERTR.

  20. PhD Graduate Opportunity: Ecology of Juvenile Desert Tortoises Agency/Organization: University of Georgia's Savannah River Ecology Lab

    E-Print Network [OSTI]

    Georgia, University of

    of Georgia's Savannah River Ecology Lab Location: UGA (Athens, Georgia) / Mojave National Preserve research at Mojave National Preserve, California. Preference will be given to those applicants who qualify about Dr. Tuberville's lab, including people and publications, can be found at: http

  1. Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and Use of Data Policy

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and Use of Data Policy Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and the NACElink Network to provide student with Eagle Career Net. Eagle Career Net is our online system

  2. Observations of short-circuiting flow paths within a free-surface wetland in Augusta, Georgia, U.S.A.

    E-Print Network [OSTI]

    Licciardi, Joseph M.

    constructed treatment wetland in Augusta, Georgia were used to quantify the size, distribution, velocity). In treatment wetlands, such heterogeneity nearly always results in reduced contaminant removal (WoObservations of short-circuiting flow paths within a free-surface wetland in Augusta, Georgia, U

  3. Energy conserving site design case study: Shenandoah, Georgia. Final report

    SciTech Connect (OSTI)

    Not Available

    1980-01-01T23:59:59.000Z

    The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

  4. Mo Year Report Period: EIA ID NUMBER:

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin:DeploymentSite Name:24,High824 2.839 2.8352.747 2.759 2.699Mo

  5. Catalytic Properties of Supported MoO3 Catalysts for Oxidative Dehydrogenation of Propane

    E-Print Network [OSTI]

    Iglesia, Enrique

    Catalytic Properties of Supported MoO3 Catalysts for Oxidative Dehydrogenation of Propane Kaidong The effects of MoOx structure on propane oxidative dehydrogenation (ODH) rates and selectivity were examined with those obtained on MoOx/ZrO2. On MoOx/Al2O3 catalysts, propane turnover rate increased with increasing Mo

  6. Design and performance of the Georgia Tech Aquatic Center photovoltaic system. Final report

    SciTech Connect (OSTI)

    Rohatgi, A.; Begovic, M.; Long, R.; Ropp, M.; Pregelj, A.

    1996-12-31T23:59:59.000Z

    A building-integrated DC PV array has been constructed on the Georgia Tech campus. The array is mounted on the roof of the Georgia Tech Aquatic Center (GTAC), site of the aquatic events during the 1996 Paralympic and Olympic Games in Atlanta. At the time of its construction, it was the world`s largest roof-mounted photovoltaic array, comprised of 2,856 modules and rates at 342 kW. This section describes the electrical and physical layout of the PV system, and the associated data acquisition system (DAS) which monitors the performance of the system and collects measurements of several important meteorological parameters.

  7. Neutron Hole States of Mo-93,95

    E-Print Network [OSTI]

    Bindal, P. K.; Youngblood, David H.; Kozub, R. L.

    1977-01-01T23:59:59.000Z

    - topes but less than half is observed for '"Mo. The hole strength distributions for l =1 and 4 are displayed in Fig. 10 for all the Mo isotopes. It is apparent from this figure that the states corres- ponding to lgg/2 2Py/2 and 2P, /, orbitals, which...

  8. Neutrino scattering off the stable even-even Mo isotopes

    SciTech Connect (OSTI)

    Balasi, K. G.; Kosmas, T. S.; Divari, P. C. [Theoretical Physics Section, University of Ioannina, GR 45110 Ioannina (Greece)

    2009-11-09T23:59:59.000Z

    Inelastic neutrino-nucleus reaction cross sections are studied focusing on the neutral current processes. Particularly, we investigate the angular and initial neutrino-energy dependence of the differential and integrated cross sections for low and intermediate energies of the incoming neutrino. The nuclear wave functions for the initial and final nuclear states are constructed in the context of the quasi-particle random phase approximation (QRPA) tested on the reproducibility of the low-lying energy spectrum. The results presented here refer to the isotopes Mo{sup 92}, Mo{sup 94}, Mo{sup 96}, Mo{sup 98} and Mo{sup 100}. These isotopes could play a significant role in supernova neutrino detection in addition to their use in double-beta and neutrinoless double-beta decay experiments (e.g. MOON, NEMO III)

  9. Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

    E-Print Network [OSTI]

    Coldren, Larry A.

    Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. © 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous

  10. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23T23:59:59.000Z

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  11. Demonstration of resonant photopumping of Mo VII by Mo XII for a VUV laser near 600 {Angstrom}

    SciTech Connect (OSTI)

    Ilcisin, K.J.; Aumayr, F.; Schwob, J.L.; Suckewer, S.

    1993-09-01T23:59:59.000Z

    We present data of experiments on the resonant photopumping of Mo VII by Mo XII as a method of generating a coherent VUV source near 600 {angstrom}. The experiment is based on a scheme proposed by Feldman and Reader in which the 4p{sup 6} -- 4p{sup 5}6s transition in Mo VII in resonantly photopumped by the 5s {sup 2}S{sub 1/2} -- 4p {sup 2}P{sub 1/2} transition in Mo XII. Results of the laser produced plasma experiments show the successful enhancement of the population of the Mo VII 4p{sup 5}6s upper lasing level when pumped by an adjacent Mo VII plasma. No enhancement was seen in a control experiment where the Mo VII plasma was pumped by a Zr X plasma. Improvements of the intensity of the Mo XII pump source, achieved using an additional pump laser, lead to the generation of a population inversion for the VUV transition.

  12. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01T23:59:59.000Z

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  13. Municipal Electric Authority of Georgia | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, searchOfRose BendMiasoleTremor(Question) | OpenGA References: SGIC[1] This

  14. AlGaAs/InGaAs/AlGaAs Double Barrier

    E-Print Network [OSTI]

    Perera, A. G. Unil

    -state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due

  15. Fe-CYCLE BACTERIA FROM INDUSTRIAL CLAYS MINED IN GEORGIA, USA EVGENYA S. SHELOBOLINA

    E-Print Network [OSTI]

    Lovley, Derek

    Fe-CYCLE BACTERIA FROM INDUSTRIAL CLAYS MINED IN GEORGIA, USA EVGENYA S. SHELOBOLINA 1, *,{, SAM M are major discoloring impurities in mined commercial white kaolin clay. In order to evaluate the potential influence of Fe-cycle bacteria on Fe cycling during post- depositional clay-weathering alteration, Fe

  16. Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Comparative Anatomy of Vertebrates

    E-Print Network [OSTI]

    Carrington, Emily

    Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Syllabus Comparative Anatomy of Vertebrates Biology 453 Tentative: Autumn Quarter 2014 Course Web Page: http://courses'll want to cover your eyes with safety glasses or wear glasses on dissection lab days. Goals My course

  17. Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Comparative Anatomy of Vertebrates

    E-Print Network [OSTI]

    Carrington, Emily

    Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Syllabus Comparative Anatomy of Vertebrates Biology 453 Winter Quarter 2014 Course Web Page: http://courses.washington.edu/chordate/hmpg-biol453.html glasses on dissection lab days. Goals My course goals begin with learning the vocabulary of anatomy; you

  18. Adopted Version 1 Georgia Tech's "BuzzPort" Portal Usage Policy

    E-Print Network [OSTI]

    Li, Mo

    Adopted Version 1 Georgia Tech's "BuzzPort" Portal Usage Policy v. 7.1 1.0 PURPOSE This Policy are highly valued and sensitive Institute resources. This Policy establishes an acceptable usage framework.0 SCOPE This Policy applies to all authorized BuzzPort usage from any location at all times

  19. Georgia Institute of Technology Ventilation System Testing Effective Date 04/01/02

    E-Print Network [OSTI]

    Georgia Institute of Technology Ventilation System Testing Effective Date 04/01/02 Revised 05 for measuring ventilation system performance. 2. Sash Positions a. Vertical rising sashes will be surveyed traverse measurements will be performed per the procedures described in Industrial Ventilation. b. Static

  20. Georgia researchers uncover new ways to meet America's alternative energy needs. By Kathy Brister

    E-Print Network [OSTI]

    Nair, Sankar

    -up companies. State economic developers attracted more than $3 billion in commercial green-energy projects over-edge" biofuel projects. Here's a look at some of the bioenergy innovations under way in Georgia, Tapping Timber bioenergy company Range Fuels plans to crank up what's being billed as the United States' first commercial

  1. This article was downloaded by: [University of Georgia] On: 04 February 2014, At: 13:21

    E-Print Network [OSTI]

    Georgia, University of

    b a Savannah River National Laboratory, Savannah River Site, Aiken, SC 29808, USA b Savannah River. Fletcherb and Andrew M. Grosseb,y a Savannah River National Laboratory, Savannah River Site, Aiken, SC 29808, USA; b Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29808, USA (Received 30

  2. Color Removal from Pulp Mill Effluent Using Coal Ash Produced from Georgia Coal Combustion Power Plants

    E-Print Network [OSTI]

    Hutcheon, James M.

    permits. To improve the aesthetic qualities of the effluent, coal ash (from local power plants_mill_discharge.jpg 2. Coal Power Plant http://www.csmonitor.com/var/ezflow_site/storage/images/media/images/2008Color Removal from Pulp Mill Effluent Using Coal Ash Produced from Georgia Coal Combustion Power

  3. Board of Regents University System of Georgia Architecture and Engineering Design Standards

    E-Print Network [OSTI]

    Board of Regents University System of Georgia Architecture and Engineering Design Standards your pointer on the section title and pick/select. #12;010000 - ARCHITECTURAL 7 010001- General Requirements 7 013515 LEED and Sustainable Design 42 013516 Sustainable Design Reporting 47 015713- Temporary

  4. An Experimental Study of Microfabricated Nickel Spark Plug Georgia Institute of technology

    E-Print Network [OSTI]

    electrodeposition through polymer molds. The nickel spark plugs are tested at 20 Hz using spark energies of 5 mAn Experimental Study of Microfabricated Nickel Spark Plug Georgia Institute of technology Atlanta presents experimental. results of the erosion and wear characteristics of micromachined nickel spark plugs

  5. Space Physics in Greece: Experience and Future Prospects Ioannis A. Daglis, Anastasios Anastasiadis and Georgia Tsiropoula

    E-Print Network [OSTI]

    Anastasiadis, Anastasios

    Space Physics in Greece: Experience and Future Prospects Ioannis A. Daglis, Anastasios Anastasiadis and Georgia Tsiropoula National Observatory of Athens, Institute of Ionospheric and Space Research, Penteli Engineering, Xanthi, Greece Abstract. Space Physics was born with the launch of the first artifi­ cial

  6. Habitat for Humanity: La Grange, Georgia, 2003 Jimmy Carter Work Project

    SciTech Connect (OSTI)

    Not Available

    2005-06-01T23:59:59.000Z

    The Troup-Chambers Habitat for Humanity built a Habitat house to ENERGY STAR standards in LaGrange, Georgia, in 2003. The project was so successfully that all Troup-Chambers houses will now be built to ENERGY STAR standards.

  7. A novel three dimensional semimetallic MoS{sub 2}

    SciTech Connect (OSTI)

    Tang, Zhen-Kun [Beijing Computational Science Research Center, Beijing 100084 (China); Departments of Physics and Electronics, Hengyang Normal University, Hengyang 421008 (China); Zhang, Hui; Liu, Li-Min, E-mail: limin.liu@csrc.ac.cn [Beijing Computational Science Research Center, Beijing 100084 (China); Liu, Hao [Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan 610207 (China); Lau, Woon-Ming [Beijing Computational Science Research Center, Beijing 100084 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan 610207 (China)

    2014-05-28T23:59:59.000Z

    Transition metal dichalcogenides (TMDs) have many potential applications, while the performances of TMDs are generally limited by the less surface active sites and the poor electron transport efficiency. Here, a novel three-dimensional (3D) structure of molybdenum disulfide (MoS{sub 2}) with larger surface area was proposed based on first-principle calculations. 3D layered MoS{sub 2} structure contains the basal surface and joint zone between the different nanoribbons, which is thermodynamically stable at room temperature, as confirmed by first principles molecular dynamics calculations. Compared the two-dimensional layered structures, the 3D MoS{sub 2} not only owns the large surface areas but also can effectively avoid the aggregation. Interestingly, although the basal surface remains the property of the intrinsic semiconductor as the bulk MoS{sub 2}, the joint zone of 3D MoS{sub 2} exhibits semimetallic, which is derived from degenerate 3d orbitals of the Mo atoms. The high stability, large surface area, and high conductivity make 3D MoS{sub 2} have great potentials as high performance catalyst.

  8. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...

  9. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

    2010-10-14T23:59:59.000Z

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  10. PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS

    E-Print Network [OSTI]

    McCluskey, Matthew

    -µm thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-µm GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied

  11. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  12. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.1­4 The growth of high-performance InGaP/ GaAs and InGaAs/InP single

  13. Diffusion Barrier Selection from Refractory Metals (Zr, Mo and Nb) via Interdiffusion Investigation for U-Mo RERTR Fuel Alloy

    SciTech Connect (OSTI)

    K. Huang; C. Kammerer; D. D. Keiser, Jr.; Y. H. Sohn

    2014-04-01T23:59:59.000Z

    U-Mo alloys are being developed as low enrichment monolithic fuel under the Reduced Enrichment for Research and Test Reactor (RERTR) Program. Diffusional interactions between the U-Mo fuel alloy and Al-alloy cladding within the monolithic fuel plate construct necessitate incorporation of a barrier layer. Fundamentally, a diffusion barrier candidate must have good thermal conductivity, high melting point, minimal metallurgical interaction, and good irradiation performance. Refractory metals, Zr, Mo, and Nb are considered based on their physical properties, and the diffusion behavior must be carefully examined first with U-Mo fuel alloy. Solid-to-solid U-10wt.%Mo vs. Mo, Zr, or Nb diffusion couples were assembled and annealed at 600, 700, 800, 900 and 1000 degrees C for various times. The interdiffusion microstructures and chemical composition were examined via scanning electron microscopy and electron probe microanalysis, respectively. For all three systems, the growth rate of interdiffusion zone were calculated at 1000, 900 and 800 degrees C under the assumption of parabolic growth, and calculated for lower temperature of 700, 600 and 500 degrees C according to Arrhenius relationship. The growth rate was determined to be about 10 3 times slower for Zr, 10 5 times slower for Mo and 10 6 times slower for Nb, than the growth rates reported for the interaction between the U-Mo fuel alloy and pure Al or Al-Si cladding alloys. Zr, however was selected as the barrier metal due to a concern for thermo- mechanical behavior of UMo/Nb interface observed from diffusion couples, and for ductile-to-brittle transition of Mo near room temperature.

  14. Effect of Mo Dispersion Size and Water Vapor on Oxidation of Two-Phase Directionally Solidified NiAl-9Mo In-Situ Composites

    SciTech Connect (OSTI)

    Brady, Michael P [ORNL] [ORNL; Bei, Hongbin [ORNL] [ORNL; Meisner, Roberta Ann [ORNL] [ORNL; Lance, Michael J [ORNL] [ORNL; Tortorelli, Peter F [ORNL] [ORNL

    2014-01-01T23:59:59.000Z

    Oxidation of two-phase NiAl-9Mo eutectics with 3 different growth rates/2nd phase Mo dispersion sizes were investigated at 900 C in air and air with 10% water vapor. Good oxidation resistance via alumina formation was observed in dry air, with Mo volatilization loss minimized by fine submicron Mo dispersions. However, extensive Mo volatilization and in-place internal oxidation of prior Mo phase regions was observed in wet air oxidation. Ramifications of this phenomenon for the development of multi-phase high-temperature alloys are discussed

  15. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)

    2000-04-17T23:59:59.000Z

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  16. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-10T23:59:59.000Z

    The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

  17. c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering.

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    c° Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School. If the MOSFET is in the pinch-off region, the following equations for ID hold: ID = K (VGS - VT H)2 (5) 2 #12

  18. Georgia Southern University Career Services Williams Center (912) 478-5197 www.georgiasouthern.edu/career/ Explore. Experience. Excel.

    E-Print Network [OSTI]

    Hutcheon, James M.

    · Enterprise Resource Planning Sys. (SAP) · Accounting Information Systems · Business Application Development Developers · Project Analysts · Technical Consultant · Systems Programmer · Internet Developers · Application System Managers · Project Managers What Can I Do With A Major In . . . INFORMATION SYSTEMS #12;Georgia

  19. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect (OSTI)

    Not Available

    2011-05-01T23:59:59.000Z

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  20. Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

    E-Print Network [OSTI]

    Sirenko, Andrei

    Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced

  1. GaN0.011P0.989–GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  2. Fracture and fatigue resistance of MoSiB alloys for ultrahigh-temperature structural applications

    E-Print Network [OSTI]

    Ritchie, Robert

    Fracture and fatigue resistance of Mo­Si­B alloys for ultrahigh-temperature structural applications­Mo3Si­Mo5SiB2 alloys, which utilize a continuous a-Mo matrix to achieve unprecedented room. Introduction For applications such as aerospace engines and power generation, future advancements are limited

  3. Oxidation, Reduction, and Condensation of Alcohols over (MO3...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Alcohols over (MO3)3 (MMo, W) Nanoclusters . Abstract: The reactions of deuterated methanol, ethanol, 1-propanol, 1-butanol, 2-propanol, 2-butanol and t-butanol over cyclic...

  4. Co-Mo Electric Cooperative- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Co-Mo Electric Cooperative provides rebates to residential and commercial members who install air source, dual fuel, and/or geothermal heat pumps, and certain energy efficient appliances. The...

  5. 9 Cr-- 1 Mo steel material for high temperature application

    DOE Patents [OSTI]

    Jablonski, Paul D; Alman, David; Dogan, Omer; Holcomb, Gordon; Cowen, Christopher

    2012-11-27T23:59:59.000Z

    One or more embodiments relates to a high-temperature, titanium alloyed, 9 Cr-1 Mo steel exhibiting improved creep strength and oxidation resistance at service temperatures up to 650.degree. C. The 9 Cr-1 Mo steel has a tempered martensite microstructure and is comprised of both large (0.5-3 .mu.m) primary titanium carbides and small (5-50 nm) secondary titanium carbides in a ratio of. from about 1:1.5 to about 1.5:1. The 9 Cr-1 Mo steel may be fabricated using exemplary austenizing, rapid cooling, and tempering steps without subsequent hot working requirements. The 9 Cr-1 Mo steel exhibits improvements in total mass gain, yield strength, and time-to-rupture over ASTM P91 and ASTM P92 at the temperature and time conditions examined.

  6. Q value of the 100Mo Double-Beta Decay

    E-Print Network [OSTI]

    S. Rahaman; V. -V. Elomaa; T. Eronen; J. Hakala; A. Jokinen; J. Julin; A. Kankainen; A. Saastamoinen; J. Suhonen; C. Weber; J. Äystö

    2007-12-20T23:59:59.000Z

    Penning trap measurements using mixed beams of 100Mo - 100Ru and 76Ge - 76Se have been utilized to determine the double-beta decay Q-values of 100Mo and 76Ge with uncertainties less than 200 eV. The value for 76Ge, 2039.04(16) keV is in agreement with the published SMILETRAP value. The new value for 100Mo, 3034.40(17) keV is 30 times more precise than the previous literature value, sufficient for the ongoing neutrinoless double-beta decay searches in 100Mo. Moreover, the precise Q-value is used to calculate the phase-space integrals and the experimental nuclear matrix element of double-beta decay.

  7. Ethanol Conversion on Cyclic (MO3)3 (M = Mo, W) Clusters

    SciTech Connect (OSTI)

    Li, Zhenjun; Fang, Zongtang; Kelley, Matthew S.; Kay, Bruce D.; Rousseau, Roger J.; Dohnalek, Zdenek; Dixon, David A.

    2014-03-06T23:59:59.000Z

    Oxides of molybdenum and tungsten are an important class of catalytic materials with applications ranging from isomerization of alkanes and alkenes, partial oxidation of alcohols, selective reduction of nitric oxide and metathesis of alkeness.[1-10] While many studies have focused on the structure - function relationships, the nature of high catalytic activity is still being extensively investigated. There is a general agreement that the activity of supported MOx (M = W, Mo) catalysts is correlated with the presence of acidic sites, where the catalytic activity is strongly affected by the type of oxide support, delocalization of electron density, structures of tungsten oxide domains and presence of protons

  8. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-11T23:59:59.000Z

    The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

  9. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2012-08-27T23:59:59.000Z

    In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

  10. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

    1997-03-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

  11. An EnergyDriven Approach to Linkage Unfolding Jason H. Cantarella # Erik D. Demaine + Hayley N. Iben # James F. O'Brien

    E-Print Network [OSTI]

    Demaine, Erik

    . This mo­ tion is piecewise­linear (the simplest possible type of # University of Georgia, cantarel

  12. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  13. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic

  14. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    E-Print Network [OSTI]

    Saadat, Omair I

    2010-01-01T23:59:59.000Z

    This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

  15. Invited Paper GaN HEMT reliability

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier

  16. MoSe2 thin films synthesized by solid state reactions between Mo and Se J. Pouzet (1) and J. C. Bernede (2)

    E-Print Network [OSTI]

    Boyer, Edmond

    807 MoSe2 thin films synthesized by solid state reactions between Mo and Se thin films J. Pouzet (1 reaction, induced by annealing, between the Mo and Se constituents in thin films form. The films have been thin films annealed under selenium pressure at only 770 K are well crystallized. The electrical

  17. 1128 IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 11, NOVEMBER 2009 In0.53Ga0.47As Channel MOSFETs With Self-Aligned

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    .48Al0.52As back confinement layer and the n++ source/drain junctions do not extend below the 5-nm With Self-Aligned InAs Source/Drain Formed by MEE Regrowth Uttam Singisetti, Mark A. Wistey, Gregory J Abstract--We report Al2O3/In0.53Ga0.47As MOSFETs hav- ing both self-aligned in situ Mo source/drain ohmic

  18. Coated U(Mo) Fuel: As-Fabricated Microstructures

    SciTech Connect (OSTI)

    Emmanuel Perez; Dennis D. Keiser, Jr.; Ann Leenaers; Sven Van den Berghe; Tom Wiencek

    2014-04-01T23:59:59.000Z

    As part of the development of low-enriched uranium fuels, fuel plates have recently been tested in the BR-2 reactor as part of the SELENIUM experiment. These fuel plates contained fuel particles with either Si or ZrN thin film coating (up to 1 µm thickness) around the U-7Mo fuel particles. In order to best understand irradiation performance, it is important to determine the starting microstructure that can be observed in as-fabricated fuel plates. To this end, detailed microstructural characterization was performed on ZrN and Si-coated U-7Mo powder in samples taken from AA6061-clad fuel plates fabricated at 500°C. Of interest was the condition of the thin film coatings after fabrication at a relatively high temperature. Both scanning electron microscopy and transmission electron microscopy were employed. The ZrN thin film coating was observed to consist of columns comprised of very fine ZrN grains. Relatively large amounts of porosity could be found in some areas of the thin film, along with an enrichment of oxygen around each of the the ZrN columns. In the case of the pure Si thin film coating sample, a (U,Mo,Al,Si) interaction layer was observed around the U-7Mo particles. Apparently, the Si reacted with the U-7Mo and Al matrix during fuel plate fabrication at 500°C to form this layer. The microstructure of the formed layer is very similar to those that form in U-7Mo versus Al-Si alloy diffusion couples annealed at higher temperatures and as-fabricated U-7Mo dispersion fuel plates with Al-Si alloy matrix fabricated at 500°C.

  19. Computers and nautical archaeology: characterization of the C.S.S. Georgia wreck site

    E-Print Network [OSTI]

    Baker, James Graham

    1982-01-01T23:59:59.000Z

    , Texas A&N University's Cultural Resource Laboratory contracted with the Corps of Engineers to perform this characterization. Conditions at the Wreck Site The environment of the wreck is determined by the Savannah river. The sediment load is so heavy..., Savannah District, to investigate, characterize, and make recommendations regarding the wreck site of a Civil War period Confederate ironclad vessel, the C. S. S. GEORGIA. The survey proved to be difficult, since visibility in the Savannah River around...

  20. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  1. SEMI-AUTOMATED LAB-ON-A-CHIP FOR DISPENSING GA-68 RADIOTRACERS

    SciTech Connect (OSTI)

    Weinberg, Irving

    2014-03-12T23:59:59.000Z

    We solved a technical problem that is hindering American progress in molecular medicine, and restricting US citizens from receiving optimal diagnostic care. Specifically, the project deals with a mother/daughter generator of positron-emitting radiotracers (Ge-68/Ga-68). These generator systems are approved in Europe but cannot be used in the USA, because of safety issues related to possible breakthrough of long-lived Ge-68 (mother) atoms. Europeans have demonstrated abilities of Ga-68-labeled radiotracers to image cancer foci with high sensitivity and specificity, and to use such methods to effectively plan therapy. The USA Food and Drug Administration (FDA) and Nuclear Regulatory Commission (NRC) have taken the position that every patient administration of Ga-68 should be preceded by an assay demonstrated that Ge-68 breakthrough is within acceptable limits. Breakthrough of parent elements is a sensitive subject at the FDA, as evidenced by the recent recall of Rb-82 generators due to inadvertent administrations of Sr-82. Commercially, there is no acceptable rapid method for assaying breakthrough of Ge-68 prior to each human administration. The gamma emissions of daughter Ga-68 have higher energies than the parent Ge-68, so that the shielding assays typically employed for Mo-99/Tc-99m generators cannot be applied to Ga-68 generators. The half-life of Ga-68 is 68 minutes, so that the standard 10-half-life delay (used to assess breakthrough in Sr-82/Rb-82 generators) cannot be applied to Ga-68 generators. As a result of the aforementioned regulatory requirements, Ga-68 generators are sold in the USA for animal use only. The American clinical community’s inability to utilize Ga-68 generators impairs abilities to treat patients domestically, and puts the USA at a disadvantage in developing exportable products. The proposed DOE project aimed to take advantage of recent technological advances developed for lab-on-a-chip (LOC) applications. Based on our experiences constructing such devices, the proposed microfluidics-based approach could provide cost-effective validation of breakthrough compliance in minutes.

  2. InAs=InGaP=GaAs heterojunction power Schottky rectifiers

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier

  3. Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN

  4. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

    E-Print Network [OSTI]

    Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112¯2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd­Scuseria­ Ernzerhof

  5. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    GaN/AlGaN heterojunction infrared detector responding in 8­14 and 20­70 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1s­2p± transition of Si donors in GaN

  6. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  7. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

    SciTech Connect (OSTI)

    Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-03-16T23:59:59.000Z

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

  8. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources

  9. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  10. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  11. In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a

    E-Print Network [OSTI]

    Yang, Kyounghoon

    205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN

  12. A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate

  13. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,

    E-Print Network [OSTI]

    Boyer, Edmond

    Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR

  14. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  15. Landscape influences on headwater streams on Fort Stewart, Georgia, USA

    SciTech Connect (OSTI)

    Jager, Yetta [ORNL; Bevelhimer, Mark S [ORNL; al., et. [Various Institutes

    2011-01-01T23:59:59.000Z

    Military landscapes represent a mixture of undisturbed natural ecosystems, developed areas, and lands that support different types and intensities of military training. Research to understand water-quality influences of military landscapes usually involves intensive sampling in a few watersheds. In this study, we developed a survey design of accessible headwater watersheds intended to improve our ability to distinguish land water relationships in general, and training influences, in particular, on Fort Stewart, GA. We sampled and analyzed water from watershed outlets. We successfully developed correlative models for total suspended solids (TSS), total nitrogen (TN), organic carbon (OC), and organic nitrogen (ON), which dominated in this blackwater ecosystem. TSS tended to be greater in samples after rainfall and during the growing season, and models that included %Wetland suggested a build-and-flush relationship. We also detected a positive association between TSS and tank-training, which suggests a need to intercept sediment-laden runoff from training areas. Models for OC showed a negative association with %Grassland. TN and ON both showed negative associations with %Grassland, %Wetland, and %Forest. Unexpected positive associations were observed between OC and equipmenttraining activity and between ON and %Bare ground ? Roads. Future studies that combine our survey-based approach with more intensive monitoring of the timing and intensity of training would be needed to better understand the mechanisms for these empirical relationships involving military training. Looking beyond local effects on Fort Stewart streams, we explore questions about how exports of OC and nitrogen from coastal military installations ultimately influence estuaries downstream.

  16. High efficiency InGaP solar cells for InGaP/GaAs tandem cell application

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.

    1994-12-31T23:59:59.000Z

    In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.

  17. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  18. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates

    E-Print Network [OSTI]

    Manfra, Michael J.

    PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth

  19. ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown

  20. Multiphonon resonant Raman scattering in MoS{sub 2}

    SciTech Connect (OSTI)

    Go?asa, K., E-mail: Katarzyna.Golasa@fuw.edu.pl; Grzeszczyk, M.; Wysmo?ek, A.; Babi?ski, A. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warszawa (Poland); Leszczy?ski, P.; Faugeras, C.; Nicolet, A. A. L.; Potemski, M. [Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble (France)

    2014-03-03T23:59:59.000Z

    Optical emission spectrum of a resonantly (??=?632.8?nm) excited molybdenum disulfide (MoS{sub 2}) is studied at liquid helium temperature. More than 20 peaks in the energy range spanning up to 1400?cm{sup ?1} from the laser line, which are related to multiphonon resonant Raman scattering processes, are observed. The attribution of the observed lines involving basic lattice vibrational modes of MoS{sub 2} and both the longitudinal (LA(M)) and the transverse (TA(M) and/or ZA(M)) acoustic phonons from the vicinity of the high-symmetry M point of the MoS{sub 2} Brillouin zone is proposed.

  1. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)

    2014-03-10T23:59:59.000Z

    The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.

  2. Identification of phases in the interaction layer between U-Mo-Zr/Al and U-Mo-Zr/Al-Si

    SciTech Connect (OSTI)

    Varela, C.L. Komar; Arico, S.F.; Mirandou, M.; Balart, S.N. [Departamento Materiales, GIDAT, GAEN, CNEA, Avda. Gral Paz 1499, B1650KNA, San Martin (Argentina); Gribaudo, L.M. [Departamento Materiales, GIDAT, GAEN, CNEA, Avda. Gral Paz 1499, B1650KNA, San Martin (Argentina); CONICET, Avda. Rivadavia 1917, C1033AAJ, Buenos Aires (Argentina)

    2008-07-15T23:59:59.000Z

    Out-of-pile diffusion experiments were performed between U-7wt.% Mo-1wt.% Zr and Al or Al A356 (7,1wt.% Si) at 550 deg. C. In this work morphological characterization and phase identification on both interaction layer are presented. They were carried out by the use of different techniques: optical and scanning electron microscopy, X-Ray diffraction and WDS microanalysis. In the interaction layer U-7wt.% Mo-1wt.% Zr/Al, the phases UAl{sub 3}, UAl{sub 4}, Al{sub 20}Mo{sub 2}U and Al{sub 43}Mo{sub 4}U{sub 6} were identified. In the interaction layer U-7wt.% Mo-1wt.% Zr/Al A356, the phases U(Al, Si) with 25at.% Si and Si{sub 5}U{sub 3} were identified. This last phase, with a higher Si concentration, was identified with XRD Synchrotron radiation performed at the National Synchrotron Light Laboratory (LNLS), Campinas, Brasil. (author)

  3. Hydrotreatment of Athabasca bitumen derived gas oil over Ni-Mo, Ni-W, and Co-Mo catalysts

    SciTech Connect (OSTI)

    Diaz-Real, R.A.; Mann, R.S.; Sambi, I.S. (Univ. of Ottawa, Ontario (Canada). Dept. of Chemical Engineering)

    1993-07-01T23:59:59.000Z

    The hydrotreatment of Athabasca bitumen derived heavy gas oil containing 4.08% S and 0.49% N was carried out in a trickle bed reactor over Ni-W, Ni-Mo, and Co-Mo catalysts supported on zeolite-alumina-silica at 623-698 K, LHSV of 1-4, gas flow rate 890 m[sup 3][sub H2]/m[sup 3][sub oil] (5,000 sef/bbl), and pressure of 6.89 MPa. Analyses for viscosity, density, aniline point, ASTM mid boiling point distillation, C/H ratio, and percentage of N and S in the final product were carried out to characterize the product oil. The amounts of N and S removed indicated the hydrodenitrogenation and hydrodesulfurization activity of the catalysts. Results of zeolite-alumina-silica-supported catalysts are compared to those obtained with commercially available Ni-Mo, Ni-W, and Co-Mo on [gamma]-alumina. Ni-Mo supported on zeolite-alumina-silica was most active and could remove as much as 99 % S and 89% N present in the oil at 698 K. The data for HDN and HDS fitted the pseudo first order model. The kinetic model is described in detail.

  4. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  5. Review of Multi-Person Exposure Calls to a Regional Poison Control Center

    E-Print Network [OSTI]

    Morgan, Brent W; Skinner, Carl G; Kleiman, Richard J; Geller, Robert J; Chang, Arthur S

    2010-01-01T23:59:59.000Z

    Exposure Calls to a Regional Poison Control Center Brent W.Medicine and the Georgia Poison Center, Atlanta, GA †of Pediatrics and the Georgia Poison Center, Atlanta, GA

  6. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others

    1997-12-31T23:59:59.000Z

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  7. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20T23:59:59.000Z

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  8. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

    SciTech Connect (OSTI)

    Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)

    2011-10-17T23:59:59.000Z

    We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

  9. Pre-Natural Resources (Two-year) Transfer Program Georgia Southern University, in cooperation with the Warnell School of Forestry and

    E-Print Network [OSTI]

    Hutcheon, James M.

    with the Warnell School of Forestry and Natural Resources, University of Georgia, offers a joint program of study, soil and water resources, environmental assessment, or forestry. Students selecting pre of Georgia, Warnell School of Forestry and Natural Resources must complete an application which is separate

  10. SUPPORTED BY THE UGA OFFICE OF THE VICE PRESIDENT FOR INSTRUCTION OVPI.UGA.EDU The University of Georgia hosts the

    E-Print Network [OSTI]

    Arnold, Jonathan

    , the Assessment Institute and Advising Research Seminar. She co-authored two articles in Academic advising: New NACADA Georgia Drive-in Conference The University of Georgia Academic Advising Coordinating Council #12 to undergraduate education, student success and retention, academic advising, curriculum and policy development

  11. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  12. September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer

    E-Print Network [OSTI]

    Pala, Nezih

    0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 ­ Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN

  13. Structure And Radiation Damage Behavior Of Epitaxial CrxMo1-x...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    And Radiation Damage Behavior Of Epitaxial CrxMo1-x Alloy Thin Films On MgO. Structure And Radiation Damage Behavior Of Epitaxial CrxMo1-x Alloy Thin Films On MgO. Abstract:...

  14. Adsorption of Potassium on the MoS2(100) Surface: A First-Principles...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Potassium on the MoS2(100) Surface: A First-Principles Investigation. Adsorption of Potassium on the MoS2(100) Surface: A First-Principles Investigation. Abstract: Periodic density...

  15. High Capacity MoO3 Nanoparticle Li-Ion Battery Anode

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    energy functional were employed.) 10 AccomplishmentStatus Theoretical changes in Li-ion intercalated -MoO 3 Mo Li O * Four Li inserted in a theoretical nanoparticle. * 9 ps...

  16. Domestic production of medical isotope Mo-99 moves a step closer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Domestic production of medical isotope Mo-99 Domestic production of medical isotope Mo-99 moves a step closer Irradiated uranium fuel has been recycled and reused for molybdenum-99...

  17. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X

  18. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial p­i­n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1Àx N/GaN undoped QW system is coated over both

  19. High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors

    SciTech Connect (OSTI)

    Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)

    1998-11-01T23:59:59.000Z

    The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.

  20. Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates

    E-Print Network [OSTI]

    Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we

  1. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method

    E-Print Network [OSTI]

    Okamoto, Koichi

    Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized

  2. Corrosion report for the U-Mo fuel concept

    SciTech Connect (OSTI)

    Henager, Jr., Charles H. [Pacific Northwest National Laboratory (PNNL), Richland, WA (US); Bennett, Wendy D. [Pacific Northwest National Laboratory (PNNL), Richland, WA (US); Doherty, Ann L. [Pacific Northwest National Laboratory (PNNL), Richland, WA (US); Fuller, E. S. [Pacific Northwest National Laboratory (PNNL), Richland, WA (US); Hardy, John S. [Pacific Northwest National Laboratory (PNNL), Richland, WA (US); Omberg, Ronald P. [Pacific Northwest National Laboratory (PNNL), Richland, WA (US)

    2014-08-28T23:59:59.000Z

    The Fuel Cycle Research and Development (FCRD) program of the Office of Nuclear Energy (NE) has implemented a program to develop a Uranium-Molybdenum (U-Mo) metal fuel for Light Water Reactors (LWR)s. Uranium-Molybdenum fuel has the potential to provide superior performance based on its thermo-physical properties, which includes high thermal conductivity for less stored heat energy. With sufficient development, it may be able to provide the Light Water industry with a melt-resistant accident tolerant fuel with improved safety response. However, the corrosion of this fuel in reactor water environments needs to be further explored and optimized by additional alloying. The Pacific Northwest National Laboratory has been tasked with performing ex-reactor corrosion testing to characterize the performance of U-Mo fuel. This report documents the results of the effort to characterize and develop the U-Mo metal fuel concept for LWRs with regard to corrosion testing. The results of a simple screening test in buffered water at 30°C using surface alloyed U-10Mo is documented and discussed. The screening test was used to guide the selection of several potential alloy improvements that were found and are recommended for further testing in autoclaves to simulate PWR water conditions more closely.

  3. MO"BIUS-INVARIANT KNOT ENERGIES R.B. KUSNER

    E-Print Network [OSTI]

    Sullivan, John M.

    for divergence-free vector fields which arise in modeling incompressible fluid flow.6,7These new knot energies MO"BIUS-INVARIANT KNOT ENERGIES R.B. KUSNER, Urbana, IL, USA 61801-2975 There has been recent interest in knot energies among mathematicians

  4. MO"BIUS-INVARIANT KNOT ENERGIES R.B. KUSNER

    E-Print Network [OSTI]

    for divergence-free vector fields which arise in modeling incompressible fluid flow.? These new knot energies may MO"BIUS-INVARIANT KNOT ENERGIES R.B. KUSNER, Urbana, IL, USA 61801-2975 There has been recent interest in knot energies among mathematicians

  5. Introduction THE YERINGTON DISTRICT, Nevada, contains porphyry Cu(Mo),

    E-Print Network [OSTI]

    Barton, Mark D.

    55 Introduction THE YERINGTON DISTRICT, Nevada, contains porphyry Cu(Mo), Cu skarn, Fe oxide with the Jurassic Yerington batholith, which serves as either host rock or as source for heat and ma- terials of the Yerington Porphyry Copper District: Magmatic to Nonmagmatic Sources of Hydrothermal Fluids, Their Flow Paths

  6. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

    E-Print Network [OSTI]

    Chung, Jinwook

    We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...

  7. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...

  8. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  9. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  10. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21T23:59:59.000Z

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  11. High current gain InGaN=GaN HBTs with C operating temperature

    E-Print Network [OSTI]

    Asbeck, Peter M.

    with an $20 nm low-temperature (Tg ¼ 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cmÀ3 Buffer GaN 2.5 mm ­ Substrate Sapphire ­ ­ HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung

  12. Atkinson County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcatAntrimArkansasAshford,AsotinAstonInformation Georgia ASHRAE

  13. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  14. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  15. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  16. Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

    SciTech Connect (OSTI)

    Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru; Mushnikov, Nikolai V., E-mail: kleinerman@imp.uran.ru; Stashkova, Liudmila A., E-mail: kleinerman@imp.uran.ru [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)

    2014-10-27T23:59:59.000Z

    Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mössbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mössbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)

  17. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  18. Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots

    E-Print Network [OSTI]

    Fonoberov, Vladimir

    Excitonic properties of strained wurtzite and zinc-blende GaNÕAlxGa1ÀxN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.1­8 Molecu- lar beam epitaxial growth in the Stranski­Krastanov mode of wurtzite WZ Ga

  19. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    E-Print Network [OSTI]

    Feenstra, Randall

    Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP

  20. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have

  1. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates

    E-Print Network [OSTI]

    Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.2­0.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication

  2. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  3. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C

  4. High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop

    E-Print Network [OSTI]

    Itoh, Tatsuo

    High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies

  5. The growth and characterization of LiGd?(Mo0?)? single crystals

    E-Print Network [OSTI]

    Reimund, James Allyn

    1981-01-01T23:59:59.000Z

    ' C/second 37 Pyroelectric Current vs. Temperature dT/dt = 30' C/second 180' Domains (Gd (MoO ) ) 37 39 INTRODUCTION This thesis discusses the growth and some single crystalline properties of lithium-gadolinium-molybdate of the type LiGd (Mo...O ) 3 45' This compound is one of the three thus far discovered compounds of the lithium ? gadolinium-molybdate (LGMO) system. In general, this system can be expressed as Li2Mo04. XGd2(Mo04)3, where LiGd3(MoO, )5 4 5 single crystals synthesize when X...

  6. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)

    2014-08-11T23:59:59.000Z

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  7. Georgia Southern's Student Sustainability Fee Funds $238,000 in Sustainability Projects STATESBORO, GA, May 10, 2014 -Georgia Southern University's Center for Sustainability is pleased to announce that the

    E-Print Network [OSTI]

    Hutcheon, James M.

    Supervisor, Department of Mechanical Engineering. Nanofiber Based Carbon Capture Technology to Reduce the CO2

  8. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

    E-Print Network [OSTI]

    Peale, Robert E.

    of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored

  9. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  10. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

    2014-05-05T23:59:59.000Z

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3?×?10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  11. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency

  12. Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.

    1985-03-01T23:59:59.000Z

    Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

  13. The Future Computing Environments (FCE) Group at Georgia Tech is a collection of faculty and students that

    E-Print Network [OSTI]

    Abowd, Gregory D.

    , are discussed in [2]. THE GROUP: HISTORY AND EXPERTISE There are now seven full-time College of ComputingABSTRACT The Future Computing Environments (FCE) Group at Georgia Tech is a collection of faculty) Group mission is to invent and better understand what constitutes an effective, everyday partnership

  14. c Copywright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering.

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    c° Copywright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School mode or the saturation region when vDS vGS - VTO, where VTO is the threshold or pinch-off voltage parameter which accounts for the change in with drain-source voltage. Because iG ' 0 in the pinch

  15. Prioritizing Areas of the Conasauga River Sub-basin in Georgia and Tennessee for Preservation and Restoration

    E-Print Network [OSTI]

    Rosemond, Amy Daum

    controversial (Simon et al., 2007). Here we define restoration to mean direct modification of stream channels. Because both land preservation and stream restoration are expensive tools, there is a general public and Restoration SETH J. WENGER1,*, MEGAN M. HAGLER2, AND BYRON J. FREEMAN3 1University of Georgia River Basin

  16. Georgia Southern University Career Services Williams Center (912) 478-5197 www.georgiasouthern.edu/career/ Explore. Experience. Excel.

    E-Print Network [OSTI]

    Hutcheon, James M.

    · Consulting Engineering Firms · Utility Companies · Private Laboratories · Industrial Firms · Manufacturing.thegeorgiaengineer.com/ · American Council of Engineering Companies www.acec.org · Georgia Chamber of Commerce www://www.aeecenter.org/ · American Solar Energy Society http://www.ases.org/ · American Nuclear Society http://www.new.ans.org/ GSU

  17. Materials in Extreme Dynamic Environments Georgia Tech has a unique combination of experimental facilities and modeling and

    E-Print Network [OSTI]

    Li, Mo

    response of materials at various critical length and time scales emphasizes both highMaterials in Extreme Dynamic Environments Georgia Tech has a unique combination of experimental facilities and modeling and simulation capabilities to explore the behavior of materials subjected to high

  18. Digital Media Tenure Track Position Georgia Tech's School of Literature, Media, and Communication (LMC), which provides diverse

    E-Print Network [OSTI]

    Li, Mo

    Digital Media Tenure Track Position Georgia Tech's School of Literature, Media, and Communication Digital Media tenure track position at the rank of Assistant Professor, beginning in the fall of 2013. We's Computational Media and Digital Media programs. A Ph.D. in an appropriate field is required (e.g. digital media

  19. NEGLIGIBLE CREEP CONDITIONS FOR MOD 9 CR 1 MO STEEL

    SciTech Connect (OSTI)

    Ren, Weiju [ORNL; Riou, Bernard [AREVA Group; Escaravage, Claude [AREVA Group; Swindeman, Robert W [ORNL; Cabrillat, Marie-Th?r?se [CEA Cadarache, St. Paul lex Durance, France; Allais, Lucien [CEA, Saclay, France

    2006-01-01T23:59:59.000Z

    Mod 9 Cr 1 Mo Steel (grade 91) is one of the materials envisaged for the Reactor Pressure Vessel of Very High Temperature Reactors. To avoid the implementation of a surveillance program covering the monitoring of the creep damage throughout the whole life of the reactor, it is recommended to operate the Reactor Pressure Vessel in the negligible creep regime. In this paper, the background of negligible creep criteria available in nuclear Codes is first recalled and their limitations were analyzed. Then, guidance for deriving criteria more appropriate for mod 9 Cr 1 Mo steel is provided. Finally, R&D actions in the U. S. and France to support the new approaches are discussed and recommended.

  20. Dislocations With Edge Components in Nanocrystalline bcc Mo

    SciTech Connect (OSTI)

    G. M. Cheng; W. Z. Xu; W. W. Jian; H. Yuan; M. H. Tsai; Y. T. Zhu; Y. F. Zhang; Paul C. Millett

    2013-07-01T23:59:59.000Z

    We report high-resolution transmission electron microscopy (HRTEM) observation of a high density of dislocations with edge components (approximately 1016 m-2) in nanocrystalline (NC) body-centered cubic (bcc) Mo prepared by high-pressure torsion. We also observed for the first time of the 1/2 <111> and <001> pure edge dislocations in NC Mo. Crystallographic analysis and image simulations reveal that the best way using HRTEM to study dislocations with edge components in bcc systems is to take images along <110> zone axis, from which it is possible to identify 1/2 <111> pure edge dislocations, and edge components of 1/2 <111> and <001> mixed dislocations. The <001> pure edge dislocations can only be identified from <100> zone axis. The high density of dislocations with edge components is believed to play a major role in the reduction of strain rate sensitivity in NC bcc metals and alloys.

  1. Charge and magnetic states of Mn-, Fe-, and Co-doped monolayer MoS{sub 2}

    SciTech Connect (OSTI)

    Lin, Xianqing [State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100084 (China); Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023 (China); Ni, Jun, E-mail: junni@mail.tsinghua.edu.cn [State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100084 (China)

    2014-07-28T23:59:59.000Z

    First-principles calculations have been performed to investigate the electronic and magnetic properties of monolayer MoS{sub 2} substitutionally doped with Mn, Fe, and Co in possible charge states (q). We find that the Mn, Fe, and Co dopants substituting for a Mo atom in monolayer MoS{sub 2} (Mn@Mo, Fe@Mo, and Co@Mo) are all magnetic in their neutral and charge states except in the highest positive charge states. Mn@Mo, Fe@Mo, and Co@Mo have the same highest negative charge states of q=?2 for chemical potential of electron just below the conduction band minimum, which corresponds to the electron doping. In the q=?2 state, Mn@Mo has a much larger magnetic moment than its neutral state with the antiferromagnetic coupling between the Mn dopant and its neighboring S atoms maintained, while Fe@Mo and Co@Mo have equal or smaller magnetic moments than their neutral states. The possible charge states of Mn@Mo, Fe@Mo, and Co@Mo and the variation of the magnetic moments for different dopants and charge states are due to the change of the occupation and energy of the anti-bonding defect levels in the band gap. The rich magnetic properties of the neutral and charge states suggest possible realization of the substitutionally Mn-, Fe-, and Co-doped monolayer MoS{sub 2} as dilute magnetic semiconductors.

  2. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  3. NO. REV. MO. _ ALSEP/LCRU EMC Test Results

    E-Print Network [OSTI]

    Rathbun, Julie A.

    NO. REV. MO. ATM 1050 _ ALSEP/LCRU EMC Test Results PAGE 1 OF 10 DATE 19 August 1971 The results of the ALSEP/LCRU EMC test are reported in this ATM. C~.·--~ s--·~e'Jn~,__')!).Prepared by:__~~~"f--.;;.~-------- Approved by: ~JM.MD. ithian #12;NO. RIV. NO. ATM 1050 ALSEP/LCRU EMC Test Results 2 10PAGE OF Aall

  4. AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh

    E-Print Network [OSTI]

    Itoh, Tatsuo

    AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: ykchung@ee.ucla.edu Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d

  5. Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    1999-01-01T23:59:59.000Z

    Microcalorimetric measurements of small absorption coefficients have been performed on thin GaN­AlGaN quantum wells in GaN­AlGaN quantum wells Axel Go¨ldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily

  6. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors

  7. Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

    SciTech Connect (OSTI)

    Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others

    1995-12-31T23:59:59.000Z

    This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.

  8. Long-term corrosion of Cr-Mo steels in superheated steam at 482 and 538/sup 0/C. [21/4 Cr-1 Mo; 9 Cr-1 Mo; Sumitomo 9 Cr-2 Mo; Sandvik HT-9

    SciTech Connect (OSTI)

    Griess, J.C.; DeVan, J.H.; Maxwell, W.A.

    1980-01-01T23:59:59.000Z

    The corrosion of several Cr-Mo ferritic steels was investigated in superheated steam at an operating power plant. Tests were conducted at 482 and 538/sup 0/C (900 and 1000/sup 0/F) in a once-through loop for times up to 28,000 h. Chromium concentrations ranged from 2.0 to 11.3%, and the effect of surface preparation on corrosion was investigated. Only one of many specimens showed evidence of exfoliation at 482/sup 0/C, but at 538/sup 0/C exfoliation occurred on at least some of the specimens of most materials; the exceptions were the alloy with the highest chromium content (Sandvik HT-9), one heat of 9 Cr-1 Mo steel with the highest silicon content, and Sumitomo 9 Cr-2 Mo steel, which was in test for only 19,000 h. Parabolic oxidation kinetics adequately described the corrosion process for about the first year, after which corrosion rates were constant and lower than predicted from extrapolation of the initial part of the penetration versus time curves. With chromium concentrations between 2 and 9%, corrosion behavior was independent of chromium content, and corrosion was only slightly less with Sandvik HT-9. Corrosion was nearly independent of surface preparation, but in two cases the presence of mill scale on the surface prior to steam exposure seemed to retard oxidation in steam. 11 figures, 5 tables.

  9. IRRADIATION PERFORMANCE OF U-Mo MONOLITHIC FUEL

    SciTech Connect (OSTI)

    M.K. Meyer; J. Gan; J.-F. Jue; D.D. Keiser; E. Perez; A. Robinson; D.M. Wachs; N. Woolstenhulme; G.L. Hofman; Y.-S. Kim

    2014-04-01T23:59:59.000Z

    High-performance research reactors require fuel that operates at high specific power to high fission density, but at relatively low temperatures. Research reactor fuels are designed for efficient heat rejection, and are composed of assemblies of thin-plates clad in aluminum alloy. The development of low-enriched fuels to replace high-enriched fuels for these reactors requires a substantially increased uranium density in the fuel to offset the decrease in enrichment. Very few fuel phases have been identified that have the required combination of very-high uranium density and stable fuel behavior at high burnup. UMo alloys represent the best known tradeoff in these properties. Testing of aluminum matrix U-Mo aluminum matrix dispersion fuel revealed a pattern of breakaway swelling behavior at intermediate burnup, related to the formation of a molybdenum stabilized high aluminum intermetallic phase that forms during irradiation. In the case of monolithic fuel, this issue was addressed by eliminating, as much as possible, the interfacial area between U-Mo and aluminum. Based on scoping irradiation test data, a fuel plate system composed of solid U-10Mo fuel meat, a zirconium diffusion barrier, and Al6061 cladding was selected for development. Developmental testing of this fuel system indicates that it meets core criteria for fuel qualification, including stable and predictable swelling behavior, mechanical integrity to high burnup, and geometric stability. In addition, the fuel exhibits robust behavior during power-cooling mismatch events under irradiation at high power.

  10. Results of a baseflow tritium survey of surface water in Georgia across from the Savannah River Site

    SciTech Connect (OSTI)

    Nichols, R.L.

    1993-03-03T23:59:59.000Z

    In October 1991 the Georgia Department of Natural Resources (GDNR) issued a press release notifying the public that tritium had been measured in elevated levels (1,200 - 1,500 pCi/1) in water samples collected from drinking water wells in Georgia across from the Savannah River Site in Aiken Co. South Carolina. None of the elevated results were above the Primary Drinking Water Standard for tritium of 20,000 pCi/l. The GDNR initiated 2 surveys to determine the source and extent of elevated tritium: (1) baseflow survey of surface water quality, and (2) well evaluation program. Results from the 2 surveys indicate that the tritium measured in groundwater wells in Georgia is not the result of a groundwater flow from South Carolina under the Savannah River and into Georgia. Atmospheric transport and consequent rainout and infiltration has resulted in an increase of tritium in the water-table aquifer in the vicinity. Water samples collected from drinking water wells believed to have been installed in the aquifer beneath the water-table aquifer were actually from the shallower water-table aquifer. Water samples collected from the wells contain the amount of tritium expected for the water-table aquifer in the sample area. The measured tritium levels in the well samples and baseflow samples do not exceed Primary Drinking Water Standards. Tritium levels in the water-table in Georgia will decline as the atmospheric releases from SRS decline, tritium undergoes natural decay, and infiltration water with less tritium flushes through the subsurface.

  11. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  12. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

    E-Print Network [OSTI]

    in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using

  13. High-efficiency radiation-resistant InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)

    1997-12-31T23:59:59.000Z

    A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.

  14. Single Phase Melt Processed Powellite (Ba,Ca) MoO{sub 4} For The Immobilization Of Mo-Rich Nuclear Waste

    SciTech Connect (OSTI)

    Brinkman, Kyle [Savannah River Site (SRS), Aiken, SC (United States); Marra, James [Savannah River Site (SRS), Aiken, SC (United States); Fox, Kevin [Savannah River Site (SRS), Aiken, SC (United States); Reppert, Jason [Savannah River Site (SRS), Aiken, SC (United States); Crum, Jarrod [Paci fic Northwest National Laboratory , Richland, WA (United States); Tang, Ming [Los Alamos National Laboratory , Los Alamos, NM (United States)

    2012-09-17T23:59:59.000Z

    Crystalline and glass composite materials are currently being investigated for the immobilization of combined High Level Waste (HLW) streams resulting from potential commercial fuel reprocessing scenarios. Several of these potential waste streams contain elevated levels of transition metal elements such as molybdenum (Mo). Molybdenum has limited solubility in typical silicate glasses used for nuclear waste immobilization. Under certain chemical and controlled cooling conditions, a powellite (Ba,Ca)MoO{sub 4} crystalline structure can be formed by reaction with alkaline earth elements. In this study, single phase BaMoO{sub 4} and CaMoO{sub 4} were formed from carbonate and oxide precursors demonstrating the viability of Mo incorporation into glass, crystalline or glass composite materials by a melt and crystallization process. X-ray diffraction, photoluminescence, and Raman spectroscopy indicated a long range ordered crystalline structure. In-situ electron irradiation studies indicated that both CaMoO{sub 4} and BaMoO{sub 4} powellite phases exhibit radiation stability up to 1000 years at anticipated doses with a crystalline to amorphous transition observed after 1 X 10{sup 13} Gy. Aqueous durability determined from product consistency tests (PCT) showed low normalized release rates for Ba, Ca, and Mo (<0.05 g/m{sup 2}).

  15. An APFIM and TEM study of Ni{sub 4}Mo precipitation in a commercial Ni-28% Mo-1.4% Fe-0.4% Cr wt. % alloy

    SciTech Connect (OSTI)

    Thomson, R.C.; Brown, N.; Bates, J.S. [Loughborough Univ. (United Kingdom). Inst. of Polymer Technology and Materials Engineering; Russell, K.F.; Miller, M.K. [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.

    1998-02-01T23:59:59.000Z

    Ni-Mo alloys containing at least 26 wt.% Mo have a negligible corrosion rate in boiling 10% hydrochloric acid and are therefore used in corrosive environments. A series of commercial Ni-Mo alloys has been developed with subtle variations in chemical composition. These alloys usually contain {approximately} 28 wt.% Mo with additions of up to 5% Fe and Cr. A significant amount of research has been performed to understand the microstructure and properties of these alloys, although most of the effort has concentrated on the Ni-Mo binary system. In some alloys with low Fe and Cr contents, a severe embrittlement problem has been observed due to the formation of the Ni{sub 4}Mo (D1{sub a}-ordered) phase within the microstructure. This research focuses on a commercial alloy with nominal composition Ni-28% Mo-1.4% Fe-0.4% Cr-0.1% Mn-0.003 wt.% C. The material supplied was a heat treatment coupon which had been attached to a large vessel during fabrication. Assessment of the chemical analysis of the alloy suggested that detrimental phases could be present or might appear during subsequent repair work. Therefore, it was important to assess the microstructural condition of the vessel, and in particular the kinetics of precipitation of Ni{sub 4}Mo.

  16. Sampling and Quality Assurance Plan Little Commissioner Creek, Wilkinson County Georgia

    E-Print Network [OSTI]

    Rosemond, Amy Daum

    ) 946-4394 fsenn@wilkinsoncounty.net Kenneth L. Turner Mayor City of Gordon PO Box 387 Gordon, GA 31031) 946-1122 Fax (478) 946-4394 Paul Vendrell UGA Feed and Environmental Water Lab Agricultural Services

  17. High-performance MoS{sub 2} transistors with low-resistance molybdenum contacts

    SciTech Connect (OSTI)

    Kang, Jiahao; Liu, Wei; Banerjee, Kaustav, E-mail: kaustav@ece.ucsb.edu [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2014-03-03T23:59:59.000Z

    In this Letter, molybdenum (Mo) is introduced and evaluated as an alternative contact metal to atomically-thin molybdenum disulphide (MoS{sub 2}), and high-performance field-effect transistors are experimentally demonstrated. In order to understand the physical nature of the interface and highlight the role of the various factors contributing to the Mo-MoS{sub 2} contacts, density functional theory (DFT) simulations are employed, which reveal that Mo can form high quality contact interface with monolayer MoS{sub 2} with zero tunnel barrier and zero Schottky barrier under source/drain contact, as well as an ultra-low Schottky barrier (0.1?eV) at source/drain-channel junction due to strong Fermi level pinning. In agreement with the DFT simulations, high mobility, high ON-current, and low contact resistance are experimentally demonstrated on both monolayer and multilayer MoS{sub 2} transistors using Mo contacts. The results obtained not only reveal the advantages of using Mo as a contact metal for MoS{sub 2} but also highlight the fact that the properties of contacts with 2-dimensional materials cannot be intuitively predicted by solely considering work function values and Schottky theory.

  18. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  19. Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with ½1210InGaN//½1210GaN and ½0001InGaN//½0001GaN epitaxial

  20. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  1. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: jhtsai@nknucc.nknu.edu.tw; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)

    2009-07-15T23:59:59.000Z

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  2. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  3. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  4. InGaN/GaN single-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2012-06-11T23:59:59.000Z

    We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

  5. Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona

    E-Print Network [OSTI]

    Anderson, Timothy J.

    be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP

  6. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  7. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  8. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    work force.. The University of Georgia Cooperative Extension Service College of Agricultural BY REDUCING HEAT LOSSES The winter months pose numerous problems and stresses on poultry growers. Rising fuel costs coupled with increased fuel consumption particularly can pose economic hardships

  9. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  10. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  11. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  12. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  13. Over 30{percent} efficient InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)

    1997-01-01T23:59:59.000Z

    A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}

  14. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  15. Effects of the Georgia flood of `94 on Lake Blackshear Dam

    SciTech Connect (OSTI)

    Findlay, R.C.; Northrop, J.H. [Northrop, Devine & Tarbell, Inc., Portland, ME (United States); Crisp, R.L. Jr. [and others

    1995-12-31T23:59:59.000Z

    Tropical Storm Alberto produced record rainfall in central Georgia in early July, 1994. The area drains into Lake Blackshear, formed in the Flint River by Lake Blackshear Dam. The level of the lake rose 3.5 m (11.5 ft) above normal and caused the worst flooding of the area in recorded history. The north embankment of the dam was overtopped, causing a 215 m (700 ft) breach. Prior to the breach, a few concentrated boils were observed in the tailwater downstream of the non-breached portion of the dam. This portion remained intact through the flood, but the presence of the boils raised questions regarding its integrity. The effects of the flood on the north embankment are discussed, as well as the geotechnical investigation conducted to assess subsurface conditions at the breach and intact portions and the plan for remediation.

  16. Attir Khalid William Singhose

    E-Print Network [OSTI]

    Singhose, William

    Department of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0405 David Frakes 4

  17. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  18. Simple Molybdenum(IV) Olefin Complexes of the Type Mo(NR)(X)(Y)(olefin)

    E-Print Network [OSTI]

    Marinescu, Smaranda C.

    Exposure of heptane solutions of Mo(NAr)(CHCMe2Ph)(Me2Pyr)(OAr) (1a; Ar = 2,6-diisopropylphenyl), Mo(NAr)(CHCMe3)(Me2Pyr)[OCMe(CF3)2] (1b), and Mo(NAr)(CHCMe2Ph)(Me2Pyr)(OSiPh3) (1c) to one atmosphere of ethylene for 12 h ...

  19. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    with the active thermoelectric cooling implemented on the same material system can improve the device performance, for the pro- posed cooling system should also be based on GaN. To real- ize this, the high-efficiency Ga,6 Great progress has been achieved in GaN-based microwave technology. GaN transistors with very high

  20. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01T23:59:59.000Z

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  1. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 1. Introduction, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimization based

  2. InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    °C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

  3. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer K.M. Groom, B fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement-doped InGaP current blocking layer that also provides optical confinement. This tech- nology relies

  4. GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization

    E-Print Network [OSTI]

    Wetzel, Christian M.

    GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical 12180-3590, U.S.A. ABSTRACT The wide bandgap polar semiconductors GaN and ZnO and their related alloys fields, and surface terminations. With a small lattice mismatch of ~1.8 % between GaN and Zn

  5. Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

    E-Print Network [OSTI]

    Nabben, Reinhard

    Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates: time-resolved photoluminescence, quantum dots, InGaN, Si substrate There exists a strong continuous expensive and are limited in size. Thus, heteroepitaxial growth of GaN on silicon substrates seems

  6. Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    -emitting diodes LEDs on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate an ideal substrate for homoepitaxial growth. Here we study the microstructural properties of green GaInN/GaN-Koehler force10 resulting from a macroscopic relaxation of strain. II. CRYSTAL GROWTH c plane bulk GaN substrate

  7. Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire of GaN-based blue and green LEDs grown on sapphire and GaN substrates using micro-Raman spectroscopy

  8. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

    E-Print Network [OSTI]

    Nabben, Reinhard

    . The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate-grown heterostructures can drastically be reduced by using a template of MOVPE-GaN on the sapphire substrate, which leadsCorrelation between structural properties and optical amplification in InGaN/GaN heterostructures

  9. Experimental activities supporting commercial U.S. accelerator production of 99-Mo

    SciTech Connect (OSTI)

    Dale, Gregory E [Los Alamos National Laboratory; Chemerisov, Sergey D [ANL; Vandegrift, George F [ANL

    2010-01-01T23:59:59.000Z

    {sup 99m}Tc, the daughter product of {sup 99}Mo, is the most commonly used radioisotope for nuclear medicine in the U.S. Experiments are being performed at Los Alamos National Laboratory and Argonne National Laboratory to demonstrate production of {sup 99}Mo using accelerators. The {sup 100}Mo({gamma},n){sup 99}Mo reaction in an enriched {sup 100}Mo target is currently under investigation. Three scaled low-power production experiments using a 20-MeV electron linac at Argonne have been performed to date. Two of these experiments used natural Mo targets and produced a total of 613 {mu}C of {sup 99}Mo. The third experiment used an enriched {sup 100}Mo target and produced 10.5 mCi of {sup 99}Mo. Following irradiation the targets were dissolved and the low specific activity solution was processed through an ARSII generator from NorthStar Medical Radioisotopes. Yields of {sup 99m}Tc >95% have been observed.

  10. Conceptual design of a new homogeneous reactor for medical radioisotope Mo-99/Tc-99m production

    SciTech Connect (OSTI)

    Liem, Peng Hong [Nippon Advanced Information Service (NAIS Co., Inc.) Scientific Computational Division, 416 Muramatsu, Tokaimura, Ibaraki (Japan); Tran, Hoai Nam [Chalmers University of Technology, Dept. of Applied Physics, Div. of Nuclear Engineering, SE-412 96 Gothenburg (Sweden); Sembiring, Tagor Malem [National Nuclear Energy Agency (BATAN), Center for Reactor Technology and Nuclear Safety, Kawasan Puspiptek, Serpong, Tangerang Selatan, Banten (Indonesia); Arbie, Bakri [PT MOTAB Technology, Kedoya Elok Plaza Blok DA 12, Jl. Panjang, Kebun Jeruk, Jakarta Barat (Indonesia)

    2014-09-30T23:59:59.000Z

    To partly solve the global and regional shortages of Mo-99 supply, a conceptual design of a nitrate-fuel-solution based homogeneous reactor dedicated for Mo-99/Tc-99m medical radioisotope production is proposed. The modified LEU Cintichem process for Mo-99 extraction which has been licensed and demonstrated commercially for decades by BATAN is taken into account as a key design consideration. The design characteristics and main parameters are identified and the advantageous aspects are shown by comparing with the BATAN's existing Mo-99 supply chain which uses a heterogeneous reactor (RSG GAS multipurpose reactor)

  11. Greenfield Alternative Study LEU-Mo Fuel Fabrication Facility

    SciTech Connect (OSTI)

    Washington Division of URS

    2008-07-01T23:59:59.000Z

    This report provides the initial “first look” of the design of the Greenfield Alternative of the Fuel Fabrication Capability (FFC); a facility to be built at a Greenfield DOE National Laboratory site. The FFC is designed to fabricate LEU-Mo monolithic fuel for the 5 US High Performance Research Reactors (HPRRs). This report provides a pre-conceptual design of the site, facility, process and equipment systems of the FFC; along with a preliminary hazards evaluation, risk assessment as well as the ROM cost and schedule estimate.

  12. Phase transitions in the adsorption system Li/Mo(112)

    E-Print Network [OSTI]

    Fedorus, A.; Kolthoff, D.; Koval, V.; Lyuksyutov, Igor F.; Naumovets, AG; Pfnur, H.

    2000-01-01T23:59:59.000Z

    limit can be quasi-one-dimensional. Such model systems are formed upon submonolayer adsorption on surfaces with strongly an- PRB 620163-1829/2000/62~4!/2852~10!/$15.00 n system Li?Mo?112? ,1,3 A. G. Naumovets,1 and H. Pfnu?r2,* , Prospect Nauki 46... W/Re thermocouple and was con- trolled by a computerized feedback circuit with a resolution of 0.01 K. The source of lithium was constructed and outgassed as PRB 62 PHASE TRANSITIONS IN TH described in Ref. 6. The LEED patterns have been taken...

  13. Recovery of Mo/Si multilayer coated optical substrates

    DOE Patents [OSTI]

    Baker, Sherry L. (Pleasanton, CA); Vernon, Stephen P. (Pleasanton, CA); Stearns, Daniel G. (Los Altos, CA)

    1997-12-16T23:59:59.000Z

    Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO.sub.2 overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.

  14. Recovery of Mo/Si multilayer coated optical substrates

    DOE Patents [OSTI]

    Baker, S.L.; Vernon, S.P.; Stearns, D.G.

    1997-12-16T23:59:59.000Z

    Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO{sub 2} overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates. 5 figs.

  15. DOE - Office of Legacy Management -- Petrolite Corp - MO 08

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling Corp - CTOregonPetrolite Corp - MO 08 FUSRAP

  16. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04T23:59:59.000Z

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  17. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

    SciTech Connect (OSTI)

    Mezdrogina, M. M., E-mail: Margaret.M@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kozhanova, Yu. V. [St. Petersburg State Polytechnical University (Russian Federation)

    2013-04-15T23:59:59.000Z

    Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu{sup 3+} and Sm{sup 3+}. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>10{sup 23} photons cm{sup -2} s{sup -1}) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

  18. Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper Science and Technology; Georgia Institute of Technology, Atlanta, GA.

    E-Print Network [OSTI]

    Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper lignocellulosics to biodiesel fuel Feedstocks ABSTRACT This poster examines the potential of utilizing waste paper CelluloseHemicelluloseLigninResource Cracking and Refining of Polysaccharides Bio-Diesel Substitutes

  19. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    on metamorphic growth of InGaP layers on GaP substrates, astemperature amber photoluminescence from InGaP QWs, grownon a metamorphic InGaP layer. References: Fred Shubert E. ,

  20. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06T23:59:59.000Z

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  1. ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures Duc-Phuong Nguyen, France We show that the large band offsets between GaN and InN and the heavy carrier effec- tive masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga1-xInxN/GaN

  2. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS Omkar Jani1 with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN.4 eV. InGaN has the appropriate optical properties and has been well demonstrated for light

  3. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

    E-Print Network [OSTI]

    Boyer, Edmond

    AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD R. Meunier1 , A, 38054 Grenoble Cedex 9, France 2 LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France AlGaN /GaN behavior. Those trapped charges can be associated to the carbon contamination of the AlGaN surface

  4. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

    E-Print Network [OSTI]

    Bowers, John

    Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth S for publication 5 January 1999 The emission mechanisms of bulk GaN and InGaN quantum wells QWs were studied suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN

  5. Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

    E-Print Network [OSTI]

    Boyer, Edmond

    , transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compareComparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities SAs and GaN microcavities. PACS numbers: 78.67.-n, 71.36.+c, 78.20.Ci, 78.55.Cr, 78.55.Et Keywords: polariton

  6. Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells

    E-Print Network [OSTI]

    As, Donat Josef

    molecular beam epitaxy on free standing 3C-SiC 001 substrates. During growth of Al0.15Ga0.85N/GaN quantum growth of the quantum structures an 800 nm thick GaN buffer layer was deposited on the 3C-SiC substrate. The buffer and the c-AlGaN/GaN quantum wells were grown at a substrate temperature of 720 °C. The layers were

  7. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    SciTech Connect (OSTI)

    Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2005-12-19T23:59:59.000Z

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  8. AlGaN/GaN HEMT With 300-GHz fmax

    E-Print Network [OSTI]

    Chung, Jinwook W.

    We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage ...

  9. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

    E-Print Network [OSTI]

    Piner, Edwin L.

    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...

  10. High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

    E-Print Network [OSTI]

    Hartono, Haryono

    The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...

  11. Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

  12. Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques

    SciTech Connect (OSTI)

    Devaraju, G.; Sathish, N.; Pathak, A. P. [School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India); Dhamodaran, S. [Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India); Gaca, J.; Wojcik, M. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw (Poland); Arora, B. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2009-03-10T23:59:59.000Z

    Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.

  13. Hydrocarbon geochemistry of the strait of Georgia: Modification of a Fraser River dominated regime by ocean dumping

    SciTech Connect (OSTI)

    Yunker, M.B.; Macdonald, R.W.; Paton, D. [Inst. of Ocean Sciences, Sidney, British Columbia (Canada)] [and others

    1996-12-31T23:59:59.000Z

    Despite the presence of Canada`s third largest city and of the largest river reaching the west coast of Canada, the study of the environmental and geochemical aspects of hydrocarbon distributions in the lower Fraser River and adjacent Strait of Georgia has not progressed beyond the cataloguing of environmental concentrations. Hence hydrocarbon distributions in the lower Fraser River are only poorly understood and very little is known about either the role that the Fraser River plays in defining the hydrocarbon geochemistry of the Strait of Georgia or how hydrocarbon distributions in the strait are being modified by shipping or dredging activities associated with the port of Vancouver. This report describes the results of analysis from sediments and particulate samples.

  14. Georgia Waste Control Law (Georgia)

    Broader source: Energy.gov [DOE]

    The Waste Control Law makes it unlawful to dump waste in any lakes, streams or surfaces waters of the State or on any private property without consent of the property owner. Waste is very broadly...

  15. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  16. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  17. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  18. Identification of single nucleotides in MoS2 nanopores

    E-Print Network [OSTI]

    Jiandong Feng; Ke Liu; Roman D. Bulushev; Sergey Khlybov; Dumitru Dumcenco; Andras Kis; Aleksandra Radenovic

    2015-05-07T23:59:59.000Z

    Ultrathin membranes have drawn much attention due to their unprecedented spatial resolution for DNA nanopore sequencing. However, the high translocation velocity (3000-50000 nt/ms) of DNA molecules moving across such membranes limits their usability. To this end, we have introduced a viscosity gradient system based on room-temperature ionic liquids (RTILs) to control the dynamics of DNA translocation through a nanometer-size pore fabricated in an atomically thin MoS2 membrane. This allows us for the first time to statistically identify all four types of nucleotides with solid state nanopores. Nucleotides are identified according to the current signatures recorded during their transient residence in the narrow orifice of the atomically thin MoS2 nanopore. In this novel architecture that exploits high viscosity of RTIL, we demonstrate single-nucleotide translocation velocity that is an optimal speed (1-50 nt/ms) for DNA sequencing, while keeping the signal to noise ratio (SNR) higher than 10. Our findings pave the way for future low-cost and rapid DNA sequencing using solid-state nanopores.

  19. Characterization of U-Mo Foils for AFIP-7

    SciTech Connect (OSTI)

    Edwards, Danny J.; Ermi, Ruby M.; Schemer-Kohrn, Alan L.; Overman, Nicole R.; Henager, Charles H.; Burkes, Douglas; Senor, David J.

    2012-11-07T23:59:59.000Z

    Twelve AFIP in-process foil samples, fabricated by either Y-12 or LANL, were shipped from LANL to PNNL for potential characterization using optical and scanning electron microscopy techniques. Of these twelve, nine different conditions were examined to one degree or another using both techniques. For this report a complete description of the results are provided for one archive foil from each source of material, and one unirradiated piece of a foil of each source that was irradiated in the Advanced Test Reactor. Additional data from two other LANL conditions are summarized in very brief form in an appendix. The characterization revealed that all four characterized conditions contained a cold worked microstructure to different degrees. The Y-12 foils exhibited a higher degree of cold working compared to the LANL foils, as evidenced by the highly elongated and obscure U-Mo grain structure present in each foil. The longitudinal orientations for both of the Y-12 foils possesses a highly laminar appearance with such a distorted grain structure that it was very difficult to even offer a range of grain sizes. The U-Mo grain structure of the LANL foils, by comparison, consisted of a more easily discernible grain structure with a mix of equiaxed and elongated grains. Both materials have an inhomogenous grain structure in that all of the characterized foils possess abnormally coarse grains.

  20. Supercapacitor behavior of ?-MnMoO{sub 4} nanorods on different electrolytes

    SciTech Connect (OSTI)

    Purushothaman, K.K., E-mail: purushoth_gri@yahoo.co.in [Department of Physics, TRP Engineering College (SRM Group), Irungalur, Trichy, Tamilnadu (India); Cuba, M. [Department of Physics, Gandhigram Rural Institute – Deemed University, Gandhigram, Tamilnadu (India)] [Department of Physics, Gandhigram Rural Institute – Deemed University, Gandhigram, Tamilnadu (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute – Deemed University, Gandhigram, Tamilnadu (India)

    2012-11-15T23:59:59.000Z

    Graphical abstract: SEM image of ?-MnMoO{sub 4} nanorods on FTO substrate. Highlights: ? Synthesis of ?-MnMoO{sub 4} nanorods by spin coating method. ? First study on the effect of electrolyte on the pseudocapacitance behavior. ? ?-MnMoO{sub 4} nanorods exhibit maximum specific capacitance of 998 F/g. ? At higher scan rates p-TSA electrolyte exhibits superior capacitive behavior. -- Abstract: ?-MnMoO{sub 4} nanorods were prepared on conducting glass substrate via sol–gel spin coating method at the optimum doping level. The effect of electrolyte on the pseudocapacitance behavior of the ?-MnMoO{sub 4} nanorods was studied using para toluene sulfonic acid (p-TSA), sulfuric acid (H{sub 2}SO{sub 4}) and hydrochloric acid (HCl) as electrolytes. X-ray diffraction analysis reveals the formation of ?-MnMoO{sub 4} in monoclinic phase. FTIR spectra contain vibrational bands associated with Mo=O, M–O and Mo–O–Mo bonds. SEM image reveals the formation of nanorods. Supercapacitor behavior has been studied using cyclic voltammetry (CV) analysis. ?-MnMoO{sub 4} nanorods exhibit maximum specific capacitance of 998 F/g at a scan rate of 5 mV/s in H{sub 2}SO{sub 4} electrolyte while a specific capacitance of 784 F/g and 530 F/g have been obtained using p-TSA and HCl electrolytes, respectively. At higher scan rates p-TSA electrolyte exhibits superior capacitive behavior than H{sub 2}SO{sub 4}.

  1. Landesque capital as an alternative to food storage in Melanesia: irrigated taro terraces in New Georgia, Solomon Islands

    E-Print Network [OSTI]

    Bayliss-Smith, Tim; Hviding, Edvard

    2014-11-07T23:59:59.000Z

    from streams (Bayliss-Smith and Hviding 2012, 2014). By controlling the flow of water through pondfields high yields of taro can be achieved, enabling a large energy surplus to be accumulated in the form of a growing crop (Spriggs 1982, 1990; Kirch... , we chart its prehistoric rise and post-colonial fall, and we outline the factors that constrained its long-term expansion. Key words: landesque capital, New Georgia, Solomon Islands, taro, terraces, irrigation 2 Ways to achieve food...

  2. Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian Kindel, Sven Rodt, Andr Strittmatter et al.

    E-Print Network [OSTI]

    Nabben, Reinhard

    Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hönig, Christian transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko,a Gerald Hönig, Christian Kindel, Sven

  3. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu et al.

    E-Print Network [OSTI]

    Gilchrist, James F.

    Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r- sapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple

  4. Quantum confinement in GaP nanoclusters

    SciTech Connect (OSTI)

    Laurich, B.K.; Smith, D.C.; Healy, M.D.

    1994-06-01T23:59:59.000Z

    We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

  5. Fe3O4-LiMo3Se3 Nanoparticle Clusters as Superparamagnetic Nanocompasses

    E-Print Network [OSTI]

    Osterloh, Frank

    -iodopropionic acid treated LiMo3Se3 nanowire bundles with oleic acid-stabilized Fe3O4 nanoparticles of 2.8, 5Fe3O4-LiMo3Se3 Nanoparticle Clusters as Superparamagnetic Nanocompasses Frank E. Osterloh,*, Hiroki A scaleable chemical approach to functional nanoscale analogues of the magnetic compasses in magnetotactic

  6. Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,,

    E-Print Network [OSTI]

    Javey, Ali

    Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,, Xingtian Yin,,,§, Maxwell Laboratory, Xi'an Jiaotong University, Xi'an, 710049 Shaanxi, People's Republic of China Joint Center/silicon solar cell with a power conversion efficiency of 14.3%. While MoOx is commonly considered

  7. MoIAC Pre-Audit Form Ways to submit this form

    E-Print Network [OSTI]

    Noble, James S.

    information: #12;MoIAC Pre-Audit Form Major Energy Consuming Equipment: Please provide informationMoIAC Pre-Audit Form Ways to submit this form: 1. Fill up the form and fax it to 573-882-2693 Attn: Dr. Bin Wu 2. Print and return this form by mail to: Dr. Bin Wu University of Missouri

  8. Adsorption studies of Mo and V onto ferrihydrite *, L. G. BENNING

    E-Print Network [OSTI]

    Benning, Liane G.

    Adsorption studies of Mo and V onto ferrihydrite L. BRINZA 1, *, L. G. BENNING 1 AND P. J. STATHAM-sorbate experiments, 100% adsorption was observed at pH values below 6 and 8, respectively. Above the point of zero charge (PZC = 7.97) of FHY, the adsorption efficiency for Mo dropped dramatically (20% at pH 8) while V

  9. Stability of Graphene doping with MoO_3 and I_2

    E-Print Network [OSTI]

    D’Arsié, Lorenzo; Esconjauregui, Santiago; Weatherup, Robert; Guo, Yuzheng; Bhardwaj, Sunil; Centeno, Alba; Zurutuza, Amaia; Cepek, Cinzia; Robertson, John

    2014-09-08T23:59:59.000Z

    We dope graphene by evaporation of MoO_3 or by solution-deposition of I_2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that Mo...

  10. Student Financial Aid 11 Jesse Hall University of Missouri Columbia Columbia, MO 65211-1600

    E-Print Network [OSTI]

    Taylor, Jerry

    Student Financial Aid 11 Jesse Hall University of Missouri ­ Columbia Columbia, MO 65211-1600 PHONE;Student Financial Aid 11 Jesse Hall University of Missouri ­ Columbia Columbia, MO 65211-1600 PHONE (573 ________________________________________________________________________________________________________________________ Name of Host Institution (College or University you will be attending or taking additional classes

  11. Ligand Conjugation of Chemically Exfoliated MoS2 Stanley S. Chou,+

    E-Print Network [OSTI]

    Huang, Jiaxing

    Ligand Conjugation of Chemically Exfoliated MoS2 Stanley S. Chou,+ Mrinmoy De,+ Jaemyung Kim,+ Segi and chemical properties. Here, we demonstrate ligand conjugation of chemically exfoliated MoS2 using thiol-nitrilotriacetic acid chelation.13 However, colloidal sur- face modification of water dispersible, chemically exfoliated

  12. Characterization of Single-Walled Carbon Nanotubes (SWNTs) Produced by CO Disproportionation on Co-Mo

    E-Print Network [OSTI]

    Resasco, Daniel

    Characterization of Single-Walled Carbon Nanotubes (SWNTs) Produced by CO Disproportionation on Co Received November 15, 2001. Revised Manuscript Received February 6, 2002 The disproportionation of CO over Co-Mo/SiO2 catalysts with low Co/Mo ratios results in a high selectivity to single-walled carbon

  13. Corrosion Behavior of Solution-Annealed CoCrMo Medical Implant

    E-Print Network [OSTI]

    Shull, Kenneth R.

    ! ! ! Corrosion Behavior of Solution- Annealed CoCrMo Medical Implant Alloys Pooja Panigrahi University June 6, 2011 #12;! ! ""! Corrosion Behavior of Solution-Annealed CoCrMo Medical Implant Alloys and Applied Sciences Northwestern University June 6, 2011 Abstract Corrosion behavior of solution annealed

  14. Double beta decays and solar neutrinos with 100 MOON(Mo Observatory Of Neutrinos)

    E-Print Network [OSTI]

    Washington at Seattle, University of

    nuclear laboratory for spectroscopic studies of neutrinos Neutrinos are key particles for new frontiers) are sensitive and realistic experiments for studying the Majorana nature of the neutrino and the absolute massDouble beta decays and solar neutrinos with 100 Mo ­MOON(Mo Observatory Of Neutrinos)­ May 24, 2005

  15. Posting type Advisory Subject Shifts in Mo-anode XRF element calibration factors

    E-Print Network [OSTI]

    Fischer, Emily V.

    Posting type Advisory Subject Shifts in Mo-anode XRF element calibration factors Module/Species A@crocker.ucdavis.edu Supporting information A molybdenum-anode XRF instrument is used to analyze the heavier elements (Ni, Cu, Zn with lighter deposits were acquired and used in the Mo-anode XRF system. The new calibration foils resulted

  16. UID-GaN doping1016 cm-3 2 m 5 m2 m

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    2 µm Drain Silicon UID-GaN ­ doping1016 cm-3 1.1 µm 2 µm GateSource 2 µm 5 µm2 µm AirAir Al0.25GaN ­ doping1015 cm-3 30 nm Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Drain Silicon UID-GaN GateSource AirAir AlxGaN Gate (a) (b) (c) Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Gate (d) P-GaN P-GaN 30

  17. Photo-oxidation method using MoS2 nanocluster materials

    DOE Patents [OSTI]

    Wilcoxon, Jess P. (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    A method of photo-oxidizing a hydrocarbon compound is provided by dispersing MoS.sub.2 nanoclusters in a solvent containing a hydrocarbon compound contaminant to form a stable solution mixture and irradiating the mixture to photo-oxide the hydrocarbon compound. Hydrocarbon compounds of interest include aromatic hydrocarbon and chlorinated hydrocarbons. MoS.sub.2 nanoclusters with an average diameter less than approximately 10 nanometers are shown to be effective in decomposing potentially toxic aromatic and chlorinated hydrocarbons, such as phenol, pentachlorophenol, chlorinated biphenols, and chloroform, into relatively non-toxic compounds. The irradiation can occur by exposing the MoS.sub.2 nanoclusters and hydrocarbon compound mixture with visible light. The MoS.sub.2 nanoclusters can be introduced to the toxic hydrocarbons as either a MoS.sub.2 solution or deposited on a support material.

  18. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect (OSTI)

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

    2013-05-28T23:59:59.000Z

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  19. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    SciTech Connect (OSTI)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01T23:59:59.000Z

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  20. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  1. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  2. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09T23:59:59.000Z

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  3. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    SciTech Connect (OSTI)

    Koblmueller, G. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany); Chu, R. M.; Raman, A.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2010-02-15T23:59:59.000Z

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  4. Phase transformation of ZnMoO{sub 4} by localized thermal spike

    SciTech Connect (OSTI)

    Agarwal, D. C.; Avasthi, D. K.; Kabiraj, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Varma, S. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Kremer, Felipe; Ridgway, M. C. [Australian National University, Canberra ACT 0200 (Australia)

    2014-04-28T23:59:59.000Z

    We show that ZnMoO{sub 4} remains in stable phase under thermal annealing up to 1000?°C, whereas it decomposes to ZnO and MoO{sub 3} under transient thermal spike induced by 100?MeV Ag irradiation. The transformation is evidenced by X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Thin films of ZnMoO{sub 4} were synthesized by thermal evaporation and subsequent annealing in oxygen ambient at 600?°C for 4?h. XRD results show that as the irradiation fluence increases, the peak related to ZnMoO{sub 4} decreases gradually and eventually disappear, whereas peaks related to ZnO grow steadily up to fluence of 3?×?10{sup 12} ions/cm{sup 2} and thereafter remain stable till highest fluence. This indicates that polycrystalline ZnMoO{sub 4} film has transformed to polycrystalline ZnO thin film. The Raman lines related to ZnMoO{sub 4} are observed to have disappeared with increasing irradiation fluence. XPS results show modification in bonding and depletion of Mo from near surface region after the ion irradiation. Cross-sectional transmission electron microscopy result shows the formation of ion track of diameter 12–16?nm. These results demonstrate that ion beam methods provide the means to control phase splitting of ZnMoO{sub 4} to ZnO and MoO{sub 3} within nanometric dimension along the ion track. The observation of phase splitting and Mo loss are explained in the framework of ion beam induced thermal spike formalism.

  5. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  6. PHYSICAL REVIEW B 85, 045319 (2012) Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

    E-Print Network [OSTI]

    Vuckovic, Jelena

    2012-01-01T23:59:59.000Z

    in materials systems, including InP/InGaP,6­9 InP/GaP,10,11 InP/AlGaInP,12,13 GaInP/GaP,14 InAs/GaP,15 and Al have been observed only in the InP/InGaP and InP/AlGaInP systems. GaP-based materials, by contrastP compared to InGaP is preferable for on-chip frequency downconversion to telecom wavelengths. Recently,17

  7. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

    2013-12-04T23:59:59.000Z

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  8. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

    SciTech Connect (OSTI)

    Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

    2014-01-06T23:59:59.000Z

    The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

  9. Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

    SciTech Connect (OSTI)

    Kandaswamy, P. K.; Monroy, E. [CEA/CNRS group 'Nanophysique et semiconducteurs', INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Machhadani, H.; Sakr, S.; Tchernycheva, M.; Julien, F. H. [Photis, Institut d'Electronique Fondamentale, Universite Paris-Sud, 91405 Orsay Cedex (France); Bougerol, C. [CEA/CNRS group 'Nanophysique et semiconducteurs', Institut Neel, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2009-10-05T23:59:59.000Z

    We report on the observation of midinfrared intersubband absorption in Si-doped GaN/AlGaN superlattices grown by plasma-assisted molecular-beam epitaxy on semi-insulating GaN-on-Si(111) templates. TM-polarized absorption attributed to transition between the first two electronic levels in the quantum wells peaked in the range from 2 to 9 {mu}m. The relative spectral width remains around 20% in the whole midinfrared spectral range. Doping is predicted to have a large influence on the intersubband absorption energy due to screening of polarization-induced internal electric field.

  10. Water and Methanol Adsorption on MgO(100)/Mo(100) Studied by Electron Spectroscopies and Thermal Programmed Desorption

    E-Print Network [OSTI]

    Goodman, Wayne

    Water and Methanol Adsorption on MgO(100)/Mo(100) Studied by Electron Spectroscopies and Thermal, 2000 The adsorption of methanol (CH3OH) and water (D2O) on the MgO(100)/Mo(100) surface at 100 K has covered MgO(100)/Mo(100) surface. On the other hand, the formation of a methanol multilayer desorption

  11. Influence of Co/Mo Ratio on Synthesis of Single-Walled Carbon Nanotubes from Carbon Monoxide

    E-Print Network [OSTI]

    Maruyama, Shigeo

    Influence of Co/Mo Ratio on Synthesis of Single-Walled Carbon Nanotubes from Carbon Monoxide, Bunkyo-ku, Tokyo 113-8656 Co and Mo are often used as catalysts for the catalytic chemical vapor in synthesizing random, vertical and parallel aligned SWNTs on Co and Mo dip-coated quartz substrates from carbon

  12. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01T23:59:59.000Z

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  13. Degradation mechanisms of GaN high electron mobility transistors

    E-Print Network [OSTI]

    Joh, Jungwoo

    2007-01-01T23:59:59.000Z

    In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. ...

  14. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

    2014-08-20T23:59:59.000Z

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  15. TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen fur

    E-Print Network [OSTI]

    Schubart, Christoph

    TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen f¨ur optoelektronische Anwendungen . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 5.1.2 Versetzungen bei Homoapitaxie auf GaN-Substraten . . . . 79 5.2 Versetzungsreduktion durch

  16. GaN Nanopore Arrays: Fabrication and Characterization

    E-Print Network [OSTI]

    Wang, Yadong

    GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

  17. Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

    The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

  18. Community Energy Systems and the Law of Public Utilities. Volume Twelve. Georgia

    SciTech Connect (OSTI)

    Feurer, D A; Weaver, C L

    1981-01-01T23:59:59.000Z

    A detailed description of the laws and programs of the State of Georgia governing the regulation of public energy utilities, the siting of energy generating and transmission facilities, the municipal franchising of public energy utilities, and the prescription of rates to be charged by utilities including attendant problems of cost allocations, rate base and operating expense determinations, and rate of return allowances. These laws and programs are analyzed to identify impediments which they may present to the implementation of Integrated Community Energy Systems (ICES). This report is one of fifty-one separate volumes which describe such regulatory programs at the Federal level and in each state as background to the report entitled Community Energy Systems and the Law of Public Utilities - Volume One: An Overview. This report also contains a summary of a strategy described in Volume One - An Overview for overcoming these impediments by working within the existing regulatory framework and by making changes in the regulatory programs to enhance the likelihood of ICES implementation.

  19. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

    SciTech Connect (OSTI)

    Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-09-01T23:59:59.000Z

    GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

  20. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...