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Sample records for mo georgia ga

  1. Scientific Basis for Bacterial TMDLs in Georgia

    E-Print Network [OSTI]

    Radcliffe, David

    and Natural Resources University of Georgia, Athens, GA Atlanta, Georgia June 2006 Scientific Basis Advisory Committee as part of the Georgia Statewide Water Planning process. www.gadnr.org/gswp/Documents/info

  2. ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY M.A. Contreras, 2

    E-Print Network [OSTI]

    Sites, James R.

    ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY 1 M.A. Contreras, 2 T. Nakada, 2 M analysis between this type of solar cell and the slightly more efficient ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell for conversion efficiency above 20% in thin-film polycrystalline solar cells. It quantifies the gains in current

  3. Georgia and Arkansas Residential Energy Code Field Studies |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GA Partners: - Advanced Energy - Raleigh, NC - Arkansas Economic Development Commission, Energy Office - Little Rock, AR - Georgia Department of Community Affairs - Atlanta, GA -...

  4. The Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

    SciTech Connect (OSTI)

    Jones, K. M.; Al-Jassim, M. M.; Hasoon, F. S.; Venkatasubramanian, R.

    1999-04-26

    The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4{micro}m range, while the deposition temperature was in the 650-825 C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions.

  5. EECBG Success Story: In Savannah, Georgia, Even the Data is Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia, Even the Data is Green May 5, 2011 - 4:49pm Addthis The new energy efficient IT Data Center in Savannah, Georgia. | Courtesy of the City of Savannah, GA. The new energy...

  6. Timothy J. Bartness Departments of Biology and Center for Behavioral Neuroscience, Georgia State University, Atlanta, GA 30303. Gregory E. Demas Department of Biology and Program in Neural

    E-Print Network [OSTI]

    Demas, Greg

    University, Atlanta, GA 30303. Gregory E. Demas Department of Biology and Program in Neural Science, Indiana University, Bloomington, IN 47405. Neurobiology of Food and Fluid Intake, 2nd Ed., Volume 14 of Handbook, and from humans, many or most of the fundamental problems in ingestive behavior 423 #12;have not been

  7. Georgia Tech Dangerous Gas

    E-Print Network [OSTI]

    Li, Mo

    1 Georgia Tech Dangerous Gas Safety Program March 2011 #12;Georgia Tech Dangerous Gas Safety.......................................................................................................... 5 6. DANGEROUS GAS USAGE REQUIREMENTS................................................. 7 6.1. RESTRICTED PURCHASE/ACQUISITION RULES: ................................................ 7 7. FLAMMABLE GAS

  8. Library Abridged Georgia Legislative History

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Library Abridged Georgia Legislative History Georgia legislative history research entails looking databases. Print Sources for Georgia Legislative History at the GSU Law Library Journal of the Georgia House of Representatives o Official Account of the legislative history of the Georgia House

  9. Georgia Air Quality Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Air Quality Control Act (AQCA) is a set of environmental regulations, permitting requirements, and air quality standards that control the amount of pollutants emitted and who emits them...

  10. 1 University of Georgia University of Georgia

    E-Print Network [OSTI]

    Arnold, Jonathan

    th year 0 0 0 0 2nd year 0 6 6 2.6 3rd year 0 0 0 0 1st year 1 6 7 3.7 J.D. Attrition (prior academic1 University of Georgia University of Georgia Can first year start other than fall? No Application Semester The Basics Part-Time $ 0 $ 0 Tuition Guarantee Program No Tuition and Fees (academic year*) Full

  11. Georgia Tech Research Institute The Georgia Tech Research Institute (GTRI) is Georgia Tech's applied

    E-Print Network [OSTI]

    Li, Mo

    Georgia Tech Research Institute The Georgia Tech Research Institute (GTRI) is Georgia Tech general funds will further erode its ability to sustain its high level of external funding and its overall

  12. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  13. Mo-99

    National Nuclear Security Administration (NNSA)

    NorthStar Medical Radioisotopes to further develop its technology to produce Mo-99 via neutron capture, bringing the total NNSA support to this project to the maximum of 25...

  14. Georgia State University Library Handbook

    E-Print Network [OSTI]

    Frantz, Kyle J.

    of Public Health 2015-2016 www.library.gsu.edu #12;Georgia State University Library Research Handbook 2 #12Georgia State University Library Handbook for School of Nursing and Health Professions & School. Learning library skills will benefit you not just in a class while at Georgia State University

  15. Budgeting at Georgia Tech

    E-Print Network [OSTI]

    ­ general revenue from any of the sources below: o State o Tuition o Indirect cost recoveries o Student fees of Georgia Tech's Budget: - Capital Budget - Operating Budget #12;Capital Project Funding Methods Renovations Assembly approval) · Gifts through GT Foundation · Recoveries from sponsored projects · Capital Leases ­ GT

  16. Georgia Comprehensive Solid Waste Management Act of 1990 (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Comprehensive Solid Waste Management Act (SWMA) of 1990 was implemented in order to improve solid waste management procedures, permitting processes and management throughout the state. ...

  17. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    of Natural Resources, water and power utilities, environmental organizations and citizen groups, and lake in Water Resource Planning, Aris Georgakakos PI, Georgia Institute of Technology, sponsored by Georgia Assistance for Water Resources Planning in the State of Georgia, Aris Georgakakos PI, Georgia Institute

  18. 2014 Race to Zero Student Design Competition: Georgia Institute...

    Energy Savers [EERE]

    Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia...

  19. Georgia Biofuel Directory A directory of Georgia industries that use biofuels.

    E-Print Network [OSTI]

    Georgia Biofuel Directory · A directory of Georgia industries that use biofuels. · Completed in May _________________________________________________________________ 3 Biofuels_____________________________________________________________________ 4 Biofuel Use in Georgia that Burn Self-Generated Biofuels as of May 2003__ 4 Chart 1.0 Biofuel Use from Contacted

  20. Georgia Shore Assistance Act

    SciTech Connect (OSTI)

    Pendergrast, C.

    1984-01-01

    The Georgia General Assembly passed the Shore Assistance Act in 1979 in order to fill a regulatory gap in the state's management of its coastal resources. A review of its legislative history, purposes, applications, and effects in terms of the sand sharing system of sand dunes, beaches, sandbars, and shoals concludes that the Act is poorly drafted. In its application on the oceanfront, it betrays its intent and protects the oceanfront owner. It has failed to satisfy the requirements of the public trust in the tidal foreshore. Amendments to clarify its understanding of the functions and values of the sand-sharing system should also conform with the state's duties under the public trust. 139 references.

  1. Georgia Power- Solar Buyback Program

    Broader source: Energy.gov [DOE]

    Georgia Power, the state's largest utility, has established a green power program, that allows the company to purchase limited solar generation at a premium price based on other customers volunta...

  2. Georgia Southern University Academic Affairs

    E-Print Network [OSTI]

    Hutcheon, James M.

    for Academic Affairs College of Business Administration Information Systems Finance and Economics Logistics and Supply Chain Management College of Education Leadership, Technology, and Human Development Teaching Georgia Center History Institute for Public and Nonprofit Studies Foreign Languages Literature

  3. Georgia Power- Advanced Solar Initiative

    Broader source: Energy.gov [DOE]

    Note: According to Georgia Power's website, the Advanced Solar Initiative's final program guidelines are due to be published on June 25th and the bidding period for is expected to open on July 10,...

  4. University of Georgia 2020 Strategic Plan

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia 2020 Strategic Plan Building on Excellence October 30, 2012 #12;Building.......................................................................................1 Hallmarks of the 2020 Strategic Plan Sustainability.....27 Appendix A. University of Georgia Strategic Planning Committee 2009

  5. Georgia Nonprofit Helps Homeowners Save Energy

    Broader source: Energy.gov [DOE]

    Residents in Georgia are living in more comfortable and energy-efficient homes because of this Savannah based weatherization program.

  6. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Arnold, Jonathan

    the University of Georgia Research Foundation, Inc.'s (the "Foundation") compliance with the types of complianceUNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. COMPLIANCE REPORTS For the Year Ended June 30, 2014 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. TABLE OF CONTENTS Financial

  7. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Arnold, Jonathan

    the University of Georgia Research Foundation, Inc.'s (the "Foundation") compliance with the types of compliance UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. COMPLIANCE REPORTS For the Year Ended June 30, 2013 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. TABLE OF CONTENTS Financial Statements

  8. Georgia Southern University Information Technology

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Information Technology Organization Chart 2014-2015 FINAL: August 29, 2014 R:\\Common\\OrgCharts\\Rev 2015 Information Technology \\CIO Produced: Strategic Research & Analysis of the groups of units reporting there. President Vice President for Information Technology and Chief

  9. April 8, 2010 Savannah, Georgia

    E-Print Network [OSTI]

    * Current NCC/TTCC Participating States: 20 Region 1 (2) New York Pennsylvania Region 2 (4) Alabama Georgia-large ­ Tom VanDam, Applied Pavement Tech. (term expires 2010) FHWA ex-officio ­ Gina Ahlstrom, FHWA - DC #12;· State Report Coordinator ­ CP Tech Center · Meeting Notes Recorders and Coordinator ­ CP Tech Center

  10. Georgia State University Library Handbook

    E-Print Network [OSTI]

    Frantz, Kyle J.

    of Public Health 2014-2015 www.library.gsu.edu #12;#12;INTRODUCTION The ability to identify, locate Informatics, Nutrition, Physical Therapy, Public Health & Respiratory Therapy Library South, 5th floor, SuiteGeorgia State University Library Handbook for School of Nursing and Health Professions & School

  11. Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin "lms

    E-Print Network [OSTI]

    Rockett, Angus

    1999-01-01

    "lms during annealing Marika Bodega rd *, Karin Granath , Lars Stolt , Angus Rockett Uppsala University Mo thin "lms used as back contacts for Cu(In,Ga)Se solar cells. The samples were analysed glass substrate into the Mo "lm. The oxygen content of the rf diode sputtered Mo "lms was 8 at% as found

  12. GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY

    E-Print Network [OSTI]

    Li, Mo

    GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY Ratified by the Institute Council on Environmental Health and Safety August 2008 POLICY Georgia Institute of Technology (Georgia environmental health and safety laws and regulations; and Demonstrating leadership in pollution prevention

  13. Updated 11/1/2012 GEORGIA INSTITUTE OF TECHNOLOGY

    E-Print Network [OSTI]

    Li, Mo

    Updated 11/1/2012 GEORGIA INSTITUTE OF TECHNOLOGY OFFICE OF FINANCIAL SERVICES ADMINSTRATION Cash/Investment Management Debt Management Georgia Tech Facilities, Inc. Georgia Advanced Technology Ventures, Inc. Project Accounting Cost Accounting Rate Studies Negotiations Salary, Planning

  14. Rome folio, Georgia-Alabama 

    E-Print Network [OSTI]

    Hayes, C. W. (Charles Willard), 1859-1916.

    1902-01-01

    Consultant Director, corporate Energy Department Energy ~1anager Manager of Energy Conservation Director of Energy Conservation Manager, corporate Energy Conservation Corporate Energy Coordinator RESULTS During the early part of the study..., Georgia, achieved a payback of less than five months on a system to measure and control allotted natural gas usage (10). With close metering BFG uses less expensive natural gas right up to the allotted supply before switching over to propane...

  15. ,"Georgia Natural Gas LNG Storage Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  16. ,"Georgia Natural Gas LNG Storage Additions (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Additions (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  17. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to Visit Georgia Nuclear Reactor Site and Tennessee Laboratory to Highlight Administration Support for Nuclear Energy Energy Secretary to Visit Georgia Nuclear Reactor Site and...

  18. Sec. Moniz to Georgia, Energy Department Scheduled to Close on...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan...

  19. Renewable and Non-Renewable Resources Tariff RNR-7 (Georgia)

    Broader source: Energy.gov [DOE]

    The Renewable and Non-Renewable Resource tariff is authorized by the Georgia Public Service Commission (PSC), which requires that the investor owned utility, Georgia Power Company, purchase...

  20. Table 2 -Lime use and practices on Corn, major producing states, 2001 CO GA IL IN IA KS KY MI MN MO NE NY NC ND OH PA SD TX WI Area

    E-Print Network [OSTI]

    Kammen, Daniel M.

    MO NE NY NC ND OH PA SD TX WI Area Lime applied NR 85 81 85 67 16 72 55 27 65 10 57 53 NR 70 95 3 1 50 51 Lime (tons treated acre) NR 1.0 2.1 1.9 2.5 2.1 2.4 2.0 2.6 2.8 1.5 1.9 1.1 NR 1.9 1.7 NR 0.5 2 NC ND OH PA SD TX WI Area Lime applied NR 95 90 69 18 69 71 14 77 16 76 99 NR 82 80 NR 5 58 54 Lime

  1. Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange

    E-Print Network [OSTI]

    Wang, Zhong L.

    of Technology, Atlanta, GA 30332-0245, USA b School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA Received 17 March 2002; accepted 16 April 2002 by D. Van Dyck Abstract P exchange; D. Stranski­Krastanov (S­K) growth Self-assemble by exploiting the Stranski­Krastanov (S

  2. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    Water Resources Institute GWRI mission is to help improve water resources management in Georgia, the US, Georgia Tech, sponsored by NOAA, the California Energy Commission, and CalFed under grants #2006J04, #2006 and groups with objective facts and information useful in developing a sound and sustainable water resources

  3. Wood Fired Steam Plants in Georgia 

    E-Print Network [OSTI]

    Bulpitt, W. S.

    1983-01-01

    . Shortly after that time, Georgia Tech and the Georgia Forestry Commission embarked on a number of projects directed toward providing the use of wood as an industrial energy source. This paper will present an overview of these programs with an emphasis...

  4. New Georgia Tech Retirees You are invited to join the

    E-Print Network [OSTI]

    Li, Mo

    INVITATION for New Georgia Tech Retirees You are invited to join the SILVER JACKETS Georgia Tech Retiree Association Stay connected with your Georgia Tech colleagues and friends through meetings, email and special events. Help promote a strong voice for Georgia Tech retirees on issues of interest

  5. Central Georgia EMC- Photovoltaic Rebate Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

  6. Georgia Power- Energy Efficiency Home Improvement Rebates

    Broader source: Energy.gov [DOE]

    Georgia Power offers up to $2,575 in rebates to customers who choose to improve home performance with whole building BPI certified efficiency measures or up to $700 for individual improvements from...

  7. Georgia: Data Center and Historic Municipal Building Go Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia: Data Center and Historic Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can...

  8. Ellijay folio, Georgia-North Carolina-Tennessee 

    E-Print Network [OSTI]

    La Forge, Laurence, 1871-1954.; Phalen, William Clifton, 1877-1949.

    1913-01-01

    During the 1970's, Georgia industry experienced problems obtaining fuel for operations on several occasions. In particular, the very cold winter of 1976-77 resulted in natural gas curtailments which virtually shut down many of Georgia's industries...

  9. Georgia Southern University Organization Chart 2014-2015

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Organization Chart 2014-2015 FINAL: August 29, 2014 R:\\Common\\Org Charts\\Rev2014n\\Georgia Southern Produced: Strategic Research & Analysis/MP NOTE: College of Graduate

  10. Georgia Institute of Technology For more information contact

    E-Print Network [OSTI]

    Nair, Sankar

    as a necessary complement to conventional oil and gas. Biofuel research at Georgia Tech intensified in 2004 Corporation chose Georgia Tech as its first strategic research alliance partner, according to Rick Zalesky Biofuels, the Georgia Research Alliance and one of the U.S. Department of Energy's new BioEnergy Research

  11. URBAN/INDUSTRIAL LAND PRIVATIZATION The Republic of Georgia

    E-Print Network [OSTI]

    Onsrud, Harlan J.

    's economic transformation to a market economy. This is also true of Georgia. By securing title to their land reviewed overall market reform prospects in the Republic of Georgia. The findings indicate that Georgia's market reform lags behind several other New Independent State (NIS) countries. This is largely due

  12. School of Chemistry and Biochemistry Georgia Institute of Technology

    E-Print Network [OSTI]

    Sherrill, David

    Analytical Physical Advanced Labs Analytical Biochemistry Inorganic Organic 4. Indicate the two chemistrySchool of Chemistry and Biochemistry Georgia Institute of Technology Atlanta, Georgia 30332-0400 A Unit of the University System of Georgia TO: B.S. in Chemistry/B.S. in Biochemistry Degree Candidates

  13. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  14. Role of Ce4<mo>+> in the scintillation mechanism of codoped Gd3Ga3Al2O12<mo>:>Ce

    SciTech Connect (OSTI)

    Wu, Yuntao; Meng, Fang; Li, Qi; Koschan, Merry; Melcher, Charles L.

    2014-10-17

    To control the time-response performance of widely used cerium-activated scintillators in cutting-edge medical-imaging devices, such as time-of-flight positron-emission tomography, a comprehensive understanding of the role of Ce valence states, especially stable Ce4+, in the scintillation mechanism is essential. However, despite some progress made recently, an understanding of the physical processes involving Ce4+ is still lacking. The aim of this work is to clarify the role of Ce4+ in scintillators by studying Ca2+ codoped Gd3Ga3Al2O12?Ce?(GGAG?Ce). By using a combination of optical absorption spectra and x-ray absorption near-edge spectroscopies, the correlation between Ca2+codoping content and the Ce4+ fraction is seen. The energy-level diagrams of Ce3+ and Ce4+ in the Gd3Ga3Al2O12 host are established by using theoretical and experimental methods, which indicate a higher position of the 5d1 state of Ce4+ in the forbidden gap in comparison to that of Ce3+. Underlying reasons for the decay-time acceleration resulting from Ca2+ codoping are revealed, and the physical processes of the Ce4+-emission model are proposed and further demonstrated by temperature-dependent radioluminescence spectra under x-ray excitation.

  15. Georgia Southern University Electronic Thesis and

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Electronic Thesis and Dissertation (ETD) Student Guide to Preparation and dissertations should adhere to include the following. · The thesis or dissertation must be the original work of the student. · Students must conform to the most recent Thesis and Dissertation Guidelines published

  16. GEORGIA INSTITUTE OF TECHNOLOGY BIOSAFETY MANUAL

    E-Print Network [OSTI]

    Sherrill, David

    in the research facilities, and classrooms located at Georgia Institute of Technology and areas located off safety inspections of laboratories and support areas, provides fire safety services, processes and manages hazardous materials for proper disposal, provides emergency response for hazardous materials

  17. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    to address the need for interdisciplinary research, education, technology transfer, and information the Georgia Environmental Protection Division, water and power utilities, environmental organizations, lake Corps of Engineers, U.S. Geological Survey, U.S. Environmental Protection Agency, and U.S. Fish

  18. The University of Georgia Salary Administration & Guidelines

    E-Print Network [OSTI]

    Arnold, Jonathan

    The University of Georgia Salary Administration & Guidelines July 8, 2012 TABLE OF CONTENTS I, or to the salary ranges contained herein, must be submitted in writing to the Office of Human Resources and salary studies to insure that the University's pay structure is competitive and uniform. III. USE

  19. Georgia Tech Department of Housing Bicycle Policies

    E-Print Network [OSTI]

    Li, Mo

    Georgia Tech Department of Housing Bicycle Policies Bicycle Storage There are several options for storage of bicycles in and around Housing buildings: Bicycle storage lockers are available, in limited. Some residence halls have bicycle storage rooms within the building. Ask your staff member if your

  20. Rachel Andrews Georgia Institute of Technology

    E-Print Network [OSTI]

    Rachel Andrews Georgia Institute of Technology Oscar Franzese Energy & Transportation Science) are roller dynamometers currently used to measure CMV brake efficiency. During a PBBT test, the CMV driver. Acknowledgements: Gary Capps, Mary Beth Lascurain Energy & Transportation Science Division Zane Pannell Pellissippi

  1. MO. RIV. MO. ALSEP Array D Subpackages 1 & 2

    E-Print Network [OSTI]

    Rathbun, Julie A.

    are based upon mechanical vibration data recorded at the LM/ALSEP interface during the LTA-3DR acoustic~ ·:~: -~ ' ' ' MO. RIV. MO. ALSEP Array D Subpackages 1 & 2 Vibration Test Results ATM-993 PAGI 1 Of OATI 12-15-71 This technical memorandum represents the design limit level vibration test report

  2. Woodstock, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia:Illinois:Wizard Power Pty LtdWoodlawnWoodshedConnecticut:

  3. EA-1963: Elba Liquefaction Project, Savannah, Georgia

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERC’s eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

  4. Hapeville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynnMassachusetts: Energy ResourcesMaine:Park,HansonHapeville, Georgia:

  5. Doraville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstrumentsArea (DOEDixmont, Maine:Doraville, Georgia: Energy Resources

  6. Energy Incentive Programs, Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: AlternativeCommunication3-EDepartment ofArizona Energy Incentive Programs,Georgia Energy Incentive

  7. Sec. Moniz to Georgia, Energy Department Scheduled to Close on...

    Office of Environmental Management (EM)

    Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan...

  8. InfiniBand-Connected LNET Routers Wheaton College Georgia Institute...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scalability of InfiniBand-Connected LNET Routers Wheaton College Georgia Institute of Technology New Mexico Institute of Mining and Technology Susan Coulter David Bonnie...

  9. Central Georgia EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes.  This year,...

  10. ,"Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)",1,"Annual",2012 ,"Release...

  11. ,"Georgia Natural Gas Imports Price All Countries (Dollars per...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet)",1,"Annual",2014...

  12. Georgia Tech New Student Orientation Overview of Student Financial Aid

    E-Print Network [OSTI]

    Li, Mo

    Georgia Tech New Student Orientation Overview of Student Financial Aid and Paying Your GT Invoice to successfully navigating the financial aid process at Georgia Tech # 1 ­ Application process annual # 2 ­ Read (behind Tech Tower, beside Stadium) Office Hours: 8:30 am to 4:00 pm Monday-Friday Email: bursar

  13. Page 1 of 3 Georgia Drivers License and

    E-Print Network [OSTI]

    Hutcheon, James M.

    Page 1 of 3 Georgia Drivers License and U.S. Social Security Card Information for International Students Do I need a Georgia driver's license or Social Security card? What are the benefits? Generally speaking, a U.S. driver's license is the most common form of day-to-day identification in the U.S. because

  14. Georgia State University J. Mack Robinson College of Business

    E-Print Network [OSTI]

    Frantz, Kyle J.

    in premier journals, three research centers, as well as model business outreach programs. AdditionalGeorgia State University J. Mack Robinson College of Business Department of Marketing BCOM INSTRUCTOR The Marketing Department in the Robinson College of Business of Georgia State University invites

  15. Dalton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstruments Inc JumpIowa: Energy Resources Jump to: navigation,Georgia:

  16. Pineview, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975) | OpenBethlehem Biomass Facility JumpPineview, Georgia: Energy

  17. BRMF Georgia Mountain Biofuels | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to:Greece: EnergyMontana)District Office JumpBRMF Georgia

  18. Rome, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS Report UrlNM-bRenewable Energy|Gas andRofin SinarGeorgia: Energy

  19. Adel, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAand DaltonSolar Energy LLC JumpInformationAddingFrance)AddressGeorgia:

  20. Gordon, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages RecentPlantMagma EnergyGoogle lends support to theGeorgia:

  1. Marietta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource HistoryScenarios TowardsInformationMarietta, Georgia: Energy Resources Jump

  2. Acworth, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (UtilityMichigan)dataSuccessful SmartAcomita Lake,Acton,Georgia: Energy

  3. Adairsville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (UtilityMichigan)dataSuccessfulAdairsville, Georgia: Energy Resources Jump

  4. Camilla, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla, Georgia: Energy Resources Jump to: navigation, search

  5. Clayton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla,ThermalCubaParker,GeorgiaValley Geothermal Project Jump

  6. Norcross, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to:Information 3rd| Open Energy Information Lawyers' GuideGeorgia:

  7. In Savannah, Georgia, Even the Data is Green | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    in Savannah, GA. | Courtesy of the City of Savannah, GA. The new energy efficient IT Data Center in Savannah, GA. | Courtesy of the City of Savannah, GA. John Johansen...

  8. Scientific Basis for Bacterial TMDLs in Georgia

    E-Print Network [OSTI]

    Radcliffe, David

    , GA. Todd Rasmussen Professor, D.B. Warnell School of Forestry and Natural Resources University Water Planning process. www.gadnr.org/gswp/Documents/info_req.html David Radcliffe Professor, Crop

  9. ZnO Nanotubes Grown at Low Temperature Using Ga as Catalysts and Their Enhanced Photocatalytic Activities

    E-Print Network [OSTI]

    Wang, Zhong L.

    substantial reports on tubular nanostructures of various materials including GaN,12 MoS2,13 TiO2,14 SiO2,15 AlZnO Nanotubes Grown at Low Temperature Using Ga as Catalysts and Their Enhanced PhotocatalyticVed: April 8, 2009 We report the synthesis of ZnO nanotubes grown via the Ga-catalyzed vapor transport method

  10. ,{ MO. REV. NO. THERMAL DESIGN

    E-Print Network [OSTI]

    Rathbun, Julie A.

    ,{ MO. REV. NO. LRRR 300 THERMAL DESIGN FINAL REPORT ATM-931 PAGE i OF iv DATE 1 S Dec 1970 The results of thermal design/analyses performed on the 300 corner Laser Ranging Retro-Reflector (LRRR 300 performance profiles are contained herein, The entire LRRR thermal design effort is des- cribed commendng

  11. GEORGIA TECH RESEARCH CORPORATION BASIC RESEARCH MASTER AGREEMENT

    E-Print Network [OSTI]

    Li, Mo

    1 GEORGIA TECH RESEARCH CORPORATION BASIC RESEARCH MASTER AGREEMENT Effective Date: ________________ Basic Research Master Agreement Number: ______________ THIS BASIC RESEARCH MASTER AGREEMENT is made that authorizes performance of specific research under this Master Agreement. Task Orders shall use the sample

  12. GEORGIA TECH RESEARCH CORPORATION APPLIED RESEARCH MASTER AGREEMENT

    E-Print Network [OSTI]

    Li, Mo

    1 GEORGIA TECH RESEARCH CORPORATION APPLIED RESEARCH MASTER AGREEMENT Effective Date: ________________ Applied Research Master Agreement Number: ______________ THIS APPLIED RESEARCH MASTER AGREEMENT this Master Agreement. Task Order shall use the sample format provided in Attachment A and will include

  13. Media Contacts: Molecular Biology Initiative, Georgia Southern University

    E-Print Network [OSTI]

    Hutcheon, James M.

    (biotechnology, chemistry, physics, biology, forensics), including applicable technology and math skills. "This-ready workforce needed to fill these jobs and we applaud them for standing out as leaders in Georgia's educational

  14. EECBG Success Story: Georgia County Turning Industrial and Farm...

    Broader source: Energy.gov (indexed) [DOE]

    Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook EECBG Success Story: Atlanta Suburb Greases the Path to Savings...

  15. Georgia: Data Center and Historic Municipal Building Go Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can consume 100 to 200 times more...

  16. Energy Savings Performance Contract- Robins Air Force Base, Georgia 

    E-Print Network [OSTI]

    Edge, J. S.

    1998-01-01

    saving projects is through private sector financing, also known as Energy Savings Performance Contracting (ESPC). Robins Air Force Base, located in middle Georgia, has recently implemented such a contract. Using an Army Corps of Engineers area...

  17. GeorgiaSouthern.edu/factbook On the Cover

    E-Print Network [OSTI]

    Hutcheon, James M.

    and made-to-order pasta, Mongolian grill selections, a full bakery, an espresso/smoothie bar, and separate sustainability at the forefront of Georgia Southern's mission, Dining Commons was built as a Leadership in Energy

  18. Gordon County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia: Energy ResourcesIllinois:GoodCounty, Georgia:

  19. Population structure of Cylindrocladium parasiticum infecting peanuts (Arachis hypogaea) in Georgia, USA

    E-Print Network [OSTI]

    Population structure of Cylindrocladium parasiticum infecting peanuts (Arachis hypogaea) in Georgia Cylindrocladium parasiticum is an impor- tant pathogen of peanut (Arachis hypogaea) causing the disease associated with peanut in Georgia, USA. Ten polymorphic microsatellite markers were used to determine genetic

  20. Li (Lily) Wang Address: 223 Statistics Building, University of Georgia, Athens, GA 30602-7952

    E-Print Network [OSTI]

    Wang, Lily

    ). A nonparametric analysis on the environmental Kuznets curve. Environmetrics, 22(3), 420­430. [9] Liu, X., Wang, L

  1. Connect, Collaborate, Commercialize There are many different opportunities for engagement and technology transfer at Georgia

    E-Print Network [OSTI]

    Garmestani, Hamid

    and technology transfer at Georgia Tech. Working together we can tailor a relationship unique to your company

  2. 2015 Georgia Institute of Technology NIST Transactive Energy Challenge Preparatory Workshop

    E-Print Network [OSTI]

    control ­ Black Start ­ Etc. 7 #12;© 2015 Georgia Institute of Technology Architecture Summary The grid© 2015 Georgia Institute of Technology NIST Transactive Energy Challenge Preparatory Workshop March, 2015 Santiago Grijalva Georgia Institute of Technology Co-Simulation of Decentralized Grid Control

  3. 9/21/2004 University of Georgia Strategic Plan Update 2003

    E-Print Network [OSTI]

    Arnold, Jonathan

    9/21/2004 University of Georgia Strategic Plan Update 2003 1 "Building Georgia's World University the Vision to Reality Presented by: Office of the Associate Provost for Institutional Effectiveness #12;9/21/2004 as the guidepost #12;9/21/2004 University of Georgia Strategic Plan Update 2003 3 Three Strategic Directions

  4. your careerGeorgia Tech Evening MBA scheller.gatech.edu/mba

    E-Print Network [OSTI]

    Li, Mo

    . Take your career to new heights. "I chose Georgia Tech because of four key advantages: 1) a flexibletransform your careerGeorgia Tech Evening MBA #12;Business, Meet Tech. scheller.gatech.edu/mba Contents 3 Message from the Dean 6 Georgia Tech Advantages 7 MBA Curriculum 9 Learning Beyond the Classroom

  5. State of Georgia CERTIFICATE OF EXEMPTION OF LOCAL HOTEL/MOTEL EXCISE TAX

    E-Print Network [OSTI]

    Teskey, Robert O.

    AND MOTEL OPERATORS: Effective April 2, 1987, Act Number 621 amending Official Code of Georgia Annotated for exemption of the local hotel/motel excise tax under Official Code of Georgia Annotated Chapter 48-13 (as Section 48-13-51 provides that Georgia state or local government officials or employees traveling

  6. Model studies of hydrodesulfurization by Mo

    SciTech Connect (OSTI)

    Friend, C.M.

    1992-01-01

    Effects of surface modifiers (Co, S) on activity and selectivity of Mo(110) for desulfurization processes were studied. S generally increases the selectivity for desulfurization while decreasing overall reactivity. Co promots C-H activation processes on Mo(110). The Mo(110)-(9x2)-Co surface affects the desulfurization of 2,5- dihydrothiophene and methanethiol. Vibrational spectroscopy is being used for determining molecular orientation; vibrational frequencies were calculated for four labeled 2-propoxide isomers on Mo(110) and found to agree with experiment.

  7. Georgia - Search - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Informationmonthly gasoline price toStocks 2009 2010 2011 2012 2013 20147"10"GeorgiaGeorgia

  8. White County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland: EnergyWexfordSouthValleyCity, Oregon:Georgia:

  9. Whitfield County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland:Meadow Lake, NewWhiteside County,County, Georgia:

  10. Wilkes County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland:MeadowWikiSysop's blog HomeWildlifeWilhoit,Georgia:

  11. Greene County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia:Oregon:CorpGreenburgh, New York:Georgia: Energy

  12. Grady County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia: EnergyGorlitz AG JumpGeorgia: Energy Resources Jump

  13. City of Chickamauga, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley, IdahoChefornak, AlaskaChickamauga, Georgia

  14. Baldwin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuels Brasil JumpGeorgia:BalchAlabama:Georgia:

  15. City of West Point, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla,ThermalCubaParker,Georgia (Utility Company)West Point, Georgia

  16. School of Earth and Atmospheric Sciences Georgia Institute of Technology

    E-Print Network [OSTI]

    Wang, Yuhang

    in atmospheric chemistry/air quality and climate and a growing reputation in oceanography, geophysicsSchool of Earth and Atmospheric Sciences Georgia Institute of Technology Strategic Plan March 1 opportunities. Vision The vision of the School of Earth and Atmospheric Sciences is: To lead in innovative

  17. Shipping and Receiving Dangerous Goods at Georgia Tech

    E-Print Network [OSTI]

    Shipping and Receiving Dangerous Goods at Georgia Tech Contacts: Biological Shipments: Shane://industry.gatech.edu/researchers/forms) GENERAL: The transportation of dangerous goods is regulated by a number of national and international of Dangerous Goods (Flash). PROCESS: 1) All shipments must have a Document Id number as well as a People

  18. LCA-based Selection for XML Document Collections Georgia Koloniari

    E-Print Network [OSTI]

    Pitoura, Evaggelia

    LCA-based Selection for XML Document Collections Georgia Koloniari Department of Computer Science in the collection to the query. We consider keyword queries and support Lowest Common Ancestor (LCA) semantics of the LCA of those nodes in the XML docu- ment that contain the query keywords. To avoid evaluating queries

  19. Georgia Institute of Technology School of Materials Science and Engineering

    E-Print Network [OSTI]

    Li, Mo

    Georgia Institute of Technology School of Materials Science and Engineering Faculty Policy and Committee Handbook #12;Introduction The purpose of this handbook is to document the MSE School's policies. The committee will function as the faculty-elected entity for down-selecting committee members (and chairs

  20. THE SCHOOL OF CHEMISTRY AND BIOCHEMISTRY GEORGIA INSTITUTE OF TECHNOLOGY

    E-Print Network [OSTI]

    Sherrill, David

    THE SCHOOL OF CHEMISTRY AND BIOCHEMISTRY GEORGIA INSTITUTE OF TECHNOLOGY GRADUATE STUDENT HANDBOOK: REQUIRED FORMS A.1. Research Advisor Selection form (Chemistry and Biochemistry) A.2 Completion of Data of the program, you will complete courses that provide a bridge between introductory (undergraduate) material

  1. Reservoirs in Georgia: Meeting Water Supply Needs While

    E-Print Network [OSTI]

    Radcliffe, David

    listed in the National Inventory of Dams 2 2. Impoundments in a portion of the Upper Oconee River watershed 2 3. Water level fluctuations before and after construction of the Allatoona Dam 5 4. The series an overview of the number of reservoirs in Georgia and their impacts. Dams and reservoirs differ marked

  2. GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT

    E-Print Network [OSTI]

    GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT Project No Members"). Section 2. Payment; Fixed Price Amount. 2.1 COMPANY agrees to pay GTRC $______ ("Fixed Price%) of the Fixed Price Amount to GTRC upon signing this Agreement. The advance payment will be applied against

  3. Mo-98(p,d)mo-97 Reaction and Core Coupling in Mo-97 and Nb-97 

    E-Print Network [OSTI]

    Bindal, P. K.; Youngblood, David H.; Kozub, R. L.; Hoffmannpinther, P. H.

    1975-01-01

    . Hoffmann-Pinther Physics Department, Ohio University, Athens, Ohio 45701 Q,eceived 14 April 1975). The Mo(P, d)9 Mo reaction has been used at a bombarding energy of 38.6 MeV to popu- late neutron hole states of S~Mo. Excitation energies and angular... distributions were mea- sured for levels up to 4.5 MeV in excitation. A distorted-wave-Born-approximation analy- sis was used to make l assignments and to obtain spectroscopic factors. Three distinct groups of weakly excited levels, one corresponding to l=4...

  4. Neutron Hole States of Mo-99 

    E-Print Network [OSTI]

    Bindal, P. K.; Youngblood, David H.; Kozub, R. L.; Hoffmannpinther, P. H.

    1975-01-01

    V; measured o(0), 99Mo levels, deduced l, S; calculated J, 7(, 8, particle-core-coupling model. I. INTRODUCTION II. EXPERIMENTAL PROCEDURE AND RESULTS Recent studies of proton and neutron configura- tions of odd-A nuclei in the mass region of 90?100 have... of "'"'"Nb was obtained' ' using a quasiparticle core coupling model. Also, study of the ~'Mo(P, d)~Mo reaction' revealed three distinct groups of weakly excited neutron hole states, one corresponding to an l = 4 transf er and two corresponding...

  5. Mo Supply Chain for Nuclear Medicine Ladimer S. Nagurney

    E-Print Network [OSTI]

    Nagurney, Anna

    of considering waste management. Ladimer S. Nagurney The 99 Mo Supply Chain #12;Nuclear Medicine To createThe 99 Mo Supply Chain for Nuclear Medicine Ladimer S. Nagurney Department of Electrical November 13, 2012 #12;Nuclear Medicine: Meeting Patient Needs with 99 Mo Ladimer S. Nagurney The 99 Mo

  6. Fast-timing measurements in 95,96Mo

    E-Print Network [OSTI]

    S. Kisyov; S. Lalkovski; N. Marginean; D. Bucurescu; L. Atanasova; D. Balabanski; Gh. Cata-Danil; I. Cata-Danil; D. Deleanu; P. Detistov; D. Filipescu; D. Ghita; T. Glodariu; R. Marginean; C. Mihai; A. Negret; S. Pascu; T. Sava; L. Stroe; G. Suliman; N. V. Zamfir; M. Zhekova

    2012-01-12

    Half-lives of the 19/2+ and 21/2+ states in 95Mo and of the 8+ and 10+ states in 96Mo were measured. Matrix elements for yrast transitions in 95Mo and 96Mo are discussed.

  7. 100 E. Normal Street Kirksville, MO 63501

    E-Print Network [OSTI]

    Gering, Jon C.

    . Curran Prendergast Repertoire The 2015 Midwest Band Conductors' Symposium" and address to: Dr. Curran Prendergast, 100 East Normal St. Kirksville, MO 63501.truman.edu/mbcs Clinicians: Dr. Paul Popiel, Director of Bands, University of Kansas Dr. Curran

  8. Ultra low resistance, non-alloyed ohmic contacts to n-InGaAs Ashish K. Baraskar1

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    Ultra low resistance, non-alloyed ohmic contacts to n-InGaAs Ashish K. Baraskar1 , Mark A. Wistey1 and fmax [1], [2]. Here we report the ultra-low specific contact resistivity (c) of non-alloyed in duration. These data indicate that the in-situ Mo gives ultra low Ohmic contacts, probably due

  9. MoS2 Nanoribbons Thermoelectric Generators

    E-Print Network [OSTI]

    Arab, Abbas

    2015-01-01

    In this work, we have designed and simulated new thermoelectric generator based on monolayer and few-layer MoS2 nanoribbons. The proposed thermoelectric generator is composed of thermocouples made of both n-type and p-type MoS2 nanoribbon legs. Density Functional Tight-Binding Non-Equilibrium Green's Function (DFTB-NEGF) method has been used to calculate the transmission spectrum of MoS2 armchair and zigzag nanoribbons. Phonon transmission spectrum are calculated based on parameterization of Stillinger-Weber potential. Thermoelectric figure of merit, ZT, is calculated using these electronic and phonon transmission spectrum. Monolayer and bilayer MoS2 armchair nanoribbons are found to have the highest ZT value for p-type and n-type legs, repectively. Moreover, we have compared the thermoelectric current of doped monolayer MoS2 armchair nanoribbons and SZi thin films. Results indicate that thermoelectric current of MoS2 monolayer nanoribbons is several orders of magnitude higher than that of Si thin films.

  10. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  11. Webster County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: Energy Resources Jump to: navigation, search Equivalent URI

  12. Wheeler County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland: EnergyWexfordSouth Broward BiomassAFB,

  13. Wilcox County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland:MeadowWikiSysop's blog Home >Alabama:

  14. Wilkinson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland:MeadowWikiSysop's blogWilkin

  15. Worth County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia:Illinois:Wizard Power PtyOhio:Doing BusinessWiseUSA |

  16. Stewart County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing CapacityVectren) JumpandStereo Satellite ImageryWashington: EnergyGeorgia:

  17. Talbot County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing CapacityVectren)Model forTechnologies95Symerton,EEconomiesTakomaGeorgia:

  18. Floyd County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable Urban Transport JumpFlowood, Mississippi: Energy Resources JumpGeorgia:

  19. Glynn County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia: Energy Resources Jump to: navigation, search

  20. Douglas County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstrumentsArea (DOEDixmont, Maine:Doraville,Alabama:Georgia: Energy

  1. Schley County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/ColoradoRemsenburg-Speonk,SageScheuco International Jump to:Schley County, Georgia: Energy

  2. Mountain Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: EnergyInformationOliver, Pennsylvania: EnergyPark, Georgia: Energy

  3. Lowndes County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona:Oregon:Lowell Point, Alaska: Energy ResourcesAuthorityGeorgia:

  4. Lanier County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona: Energy Resources JumpColorado:NewLanier County, Georgia: Energy

  5. Lee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona: EnergyLebanon County, Pennsylvania:Georgia: Energy Resources Jump

  6. Randolph County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/WaterEnergy Marketing Corp JumpRamRandolph County,Georgia:

  7. City of East Point, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,ColumbusDurant,

  8. Crawford County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)|Alabama: Energy ResourcesVirginia:Georgia: Energy Resources

  9. Crisp County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)|Alabama: EnergyPennsylvania:CrestwoodCounty, Georgia: Energy

  10. City of Quitman, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurchFontanelle,InformationQuitman, Georgia (Utility

  11. Lighting Up Georgia Convenience Stores | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURING OFFICE INDUSTRIALU.S.Leadership on CleanUp Georgia Convenience Stores Lighting Up

  12. Best Practices for Rural Traffic Safety Georgia's Experience in Increasing Rural Safety Belt Use Rates

    E-Print Network [OSTI]

    Minnesota, University of

    Best Practices for Rural Traffic Safety Georgia's Experience in Increasing Rural Safety Belt Use Enforcement Efforts ­ Checkpoints ­ Messages regarding Seat Belts ­ Messages regarding Rural SB Use

  13. Tunable MoS{sub 2} bandgap in MoS{sub 2}-graphene heterostructures

    SciTech Connect (OSTI)

    Ebnonnasir, Abbas [Department of Mechanical Engineering and Materials Science Program, Colorado School of Mines, Golden, Colorado 80401 (United States); Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States); Narayanan, Badri; Ciobanu, Cristian V., E-mail: cciobanu@mines.edu, E-mail: kodambaka@ucla.edu [Department of Mechanical Engineering and Materials Science Program, Colorado School of Mines, Golden, Colorado 80401 (United States); Kodambaka, Suneel, E-mail: cciobanu@mines.edu, E-mail: kodambaka@ucla.edu [Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States)

    2014-07-21

    Using density functional theory calculations with van der Waals corrections, we investigated how the interlayer orientation affects the structure and electronic properties of MoS{sub 2}-graphene bilayer heterostructures. Changing the orientation of graphene with respect to MoS{sub 2} strongly influences the type and the value of the electronic bandgap in MoS{sub 2}, while not significantly altering the binding energy between the layers or the interlayer spacing. We show that the physical origin of this tunable bandgap arises from variations in the S–S interplanar distance (MoS{sub 2} thickness) with the interlayer orientation, variations which are caused by electron transfer away from the Mo–S bonds.

  14. A DISPLAY CONCEPT FOR STAYING AHEAD OF THE AIRPLANE Eric N. Johnson, Lockheed Martin Aeronautical Systems, Marietta, Georgia

    E-Print Network [OSTI]

    Johnson, Eric N.

    A DISPLAY CONCEPT FOR STAYING AHEAD OF THE AIRPLANE Eric N. Johnson, Lockheed Martin Aeronautical Systems, Marietta, Georgia David C. Hansen, Lockheed Martin Aeronautical Systems, Marietta, Georgia manner required for many aerospace applications. Considerably more data fusion, data prediction, alerting

  15. Subscriber access provided by Georgia Tech Library The Journal of Physical Chemistry C is published by the American Chemical

    E-Print Network [OSTI]

    Wang, Zhong L.

    and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, and Department of AdVanced Material, then put into a polypropylene centrifuge tube, which was filled with 5 mL sterile phosphate buffer solution

  16. Case Study: Georgia-Pacific Reduces Outside Fuel Costs and Increases Process Efficiency with Insulation Upgrade Program 

    E-Print Network [OSTI]

    Jackson, D.

    1997-01-01

    A Georgia-Pacific plywood plant located in Madison, Georgia recently decided to insulate their steam lines for energy conservation, improved process efficiency and personnel protection. The goal of the project was to eliminate dependency...

  17. Elevated Temperature Tensile Tests on DU–10Mo Rolled Foils

    SciTech Connect (OSTI)

    Schulthess, Jason

    2014-09-01

    Tensile mechanical properties for uranium-10 wt.% molybdenum (U–10Mo) foils are required to support modeling and qualification of new monolithic fuel plate designs. It is expected that depleted uranium-10 wt% Mo (DU–10Mo) mechanical behavior is representative of the low enriched U–10Mo to be used in the actual fuel plates, therefore DU-10Mo was studied to simplify material processing, handling, and testing requirements. In this report, tensile testing of DU-10Mo fuel foils prepared using four different thermomechanical processing treatments were conducted to assess the impact of foil fabrication history on resultant tensile properties.

  18. Simulation and management implications of feral horse grazing on Cumberland Island, Georgia

    E-Print Network [OSTI]

    Turner, Monica G.

    Simulation and management implications of feral horse grazing on Cumberland Island, Georgia MONICA GOIGEL TURNER Cumberiand Island National !&shore, Georgia,is inhabited by a population of feral horsea an acceptable population size of feral horses. Five-year shnulations indicated a threshold of 2,700 kg

  19. GEORGIA STATE UNIVERSITY: Robinson College of Business, Department of Risk Management & Insurance

    E-Print Network [OSTI]

    Frantz, Kyle J.

    GEORGIA STATE UNIVERSITY: Robinson College of Business, Department of Risk Management & Insurance effective fall 2015 in the Department of Risk Management and Insurance at the Robinson College of Business The mission of the Department of Risk Management and Insurance at Georgia State University is to better

  20. This article was downloaded by:[Georgia Technology Library] On: 27 July 2007

    E-Print Network [OSTI]

    Wang, Zhong L.

    This article was downloaded by:[Georgia Technology Library] On: 27 July 2007 Access Details 2007 #12;DownloadedBy:[GeorgiaTechnologyLibrary]At:17:0827July2007 Philosophical Magazine, Vol. 87, Nos cross-section and well-defined growth directions, with widths ranging from 30 nm to 2 mm, width

  1. BACTERIA TMDL IMPLEMENTATION CONTROL STRATEGIES OF THE SOUTHEAST: RECOMMENDATIONS FOR GEORGIA

    E-Print Network [OSTI]

    Radcliffe, David

    BACTERIA TMDL IMPLEMENTATION CONTROL STRATEGIES OF THE SOUTHEAST: RECOMMENDATIONS FOR GEORGIA implementation plans for bacteria in the state of Georgia. Methods include reviewing relevant literature, policy bacteria TMDL implementation plans; 2) showing control strategies in other states that could be implemented

  2. Tilefish off South Carolina and Georgia R. A. LOW, Jr., G. F. ULRICH, and F. BLUM

    E-Print Network [OSTI]

    Tilefish off South Carolina and Georgia R. A. LOW, Jr., G. F. ULRICH, and F. BLUM Introduction. Preliminary indications are that the 1981 commercial catch off South Carolina and Georgia was comparable and were primarily caught in a small area off southeastern Florida. In 1980, the South Carolina Wildlife

  3. Momentum flux estimates for South Georgia Island mountain waves in the stratosphere observed via satellite

    E-Print Network [OSTI]

    Alexander, M. Joan

    Momentum flux estimates for South Georgia Island mountain waves in the stratosphere observed via observations of mountain wave events in the stratosphere above South Georgia Island in the remote southern important drag forces on the circulation. Small island orography is generally neglected in mountain wave

  4. Ph.D in Economics at the Andrew Young School, Georgia State University

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Ph.D in Economics at the Andrew Young School, Georgia State University WHY Georgia State University's Department of Economics? We are part of one of America's best public affairs graduate schools: the Andrew in scholarly journals including Econometrica, American Economic Review, Journal of Political Economy, Quarterly

  5. Advertisement for Clinical Positions GEORGIA STATE UNIVERSITY invites applications for multiple non-tenure-track clinical

    E-Print Network [OSTI]

    Frantz, Kyle J.

    , demonstrated capability for and commitment to publishing research in refereed journals, and an earned Ph on University budget approval. Review of applications will begin immediately and will continue until positions-413-7378 Georgia State University a unit of the University System of Georgia, is an equal opportunity educational

  6. POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition in Licensing

    E-Print Network [OSTI]

    Arnold, Jonathan

    POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition the interests of the company over their responsibilities to UGARF and the University of Georgia. This Policy with this Policy. II. Policy In the course of intellectual property licensing, UGARF, through the work of TCO, may

  7. Mechanism for Job Creation in Georgia: Enterprise Innovation Institute (EI2

    E-Print Network [OSTI]

    , including such leaders as Suniva, which produces solar panels; CardioMEMS, a developer of implantableMechanism for Job Creation in Georgia: Enterprise Innovation Institute (EI2 ) Government's Enterprise Innovation Institute (EI2 ) plays a critical role in the growth of Georgia's econo- my. Through

  8. Oxidation, Reduction, and Condensation of Alcohols over (MO3)3 (M=Mo, W) Nanoclusters

    SciTech Connect (OSTI)

    Fang, Zongtang; Li, Zhenjun; Kelley, Matthew S.; Kay, Bruce D.; Li, Shenggang; Hennigan, Jamie M.; Rousseau, Roger J.; Dohnalek, Zdenek; Dixon, David A.

    2014-10-02

    The reactions of deuterated methanol, ethanol, 1-propanol, 1-butanol, 2-propanol, 2-butanol and t-butanol over cyclic (MO3)3 (M = Mo, W) clusters were studied experimentally with temperature programmed desorption (TPD) and theoretically with coupled cluster CCSD(T) theory and density functional theory. The reactions of two alcohols per M3O9 cluster are required to provide agreement with experiment for D2O release, dehydrogenation and dehydration. The reaction begins with the elimination of water by proton transfers and forms an intermediate dialkoxy species which can undergo further reaction. Dehydration proceeds by a ? hydrogen transfer to a terminal M=O. Dehydrogenation takes place via an ? hydrogen transfer to an adjacent MoVI = O atom or a WVI metal center with redox involved for M = Mo and no redox for M = W. The two channels have comparable activation energies. H/D exchange to produce alcohols can take place after olefin is released or via the dialkoxy species depending on the alcohol and the cluster. The Lewis acidity of the metal center with WVI being larger than MoVI results in the increased reactivity of W3O9 over Mo3O9 for dehydrogenation and dehydration.

  9. Eligibility for GT Housing All applicants must have been accepted to Georgia Tech and accepted their offer of admission

    E-Print Network [OSTI]

    Li, Mo

    Eligibility for GT Housing All applicants must have been accepted to Georgia Tech and accepted their offer of admission before they can apply for Georgia Tech Housing. Applicants must be at least 16 years of age on the date of application for Georgia Tech Housing. Applicants over 29 years of age must work

  10. Georgia - Rankings - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Informationmonthly gasoline price toStocks 2009 2010 2011 2012 2013 20147"10"Georgia

  11. Warren County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin,Village ofWaialua,Wallington,Solar CoFacility |FacilityGeorgia:

  12. Washington County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin,VillageWarren Park, Indiana:Open EnergyAlabama:Georgia: Energy

  13. Turner County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin, New York: Energy Resources Jump to:Georgia: Energy Resources

  14. Hall County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,SolarFERCInformationVirginia: EnergyHall County, Georgia:

  15. Franklin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable Urban TransportFortistar LLC Jumpwells, RaftArkansas: EnergyGeorgia:

  16. Echols County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH Jump to:Providence, RhodeEchols County, Georgia: Energy Resources Jump

  17. Effingham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH Jump to:Providence,New Mexico: EnergyEnergyCreek GeothermalNewGeorgia:

  18. Elbert County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH Jump to:Providence,New Mexico:Cerrito,Paso,Elaine, Arkansas:Georgia:

  19. Fayette County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbHFarinello Geothermal Power Station JumpFaroeFaulkFauquierGeorgia:

  20. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalterOptimizing(SC)FermiFundingGenome To LifeGeorgia

  1. Mitchell County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: Energy ResourcesDec 2005MinnehahaElectric Coop, Inc JumpInformationGeorgia:

  2. Macon County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma,Information MHKMHK5 < MHKKemblaSolar JumpMackGeorgia: Energy

  3. Lincoln County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona: EnergyLebanonTexas:Hill,Photovoltaic JumpLimestone,PowerGeorgia:

  4. Jefferson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy ResourcesOrder at 8,OpenKentucky:Jeanerette BiomassJefferson County, Georgia:

  5. Pickens County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975) | Open EnergyPhoenicia, New York:PianaccePiattGeorgia: Energy

  6. Pike County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975) | Open EnergyPhoenicia,Creek, Ohio: EnergyGeorgia: Energy

  7. Quitman County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGeneration JumpPublic UtilityQuintas Energy Jump to: navigation,Georgia:

  8. Newton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPI Ventures LtdNeville,InformationNewcastle,NewNewstead, NewGeorgia: Energy

  9. City of Acworth, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd Jump to:ChangingCNEInformationInformationGeorgia

  10. City of Adel, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (Utility Company) Jump to: navigation, search Name:

  11. City of Barnesville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (Utility Company)Arlington,City ofBardstown,City

  12. City of Blakely, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (UtilityBenham, KentuckyBigelow Place: IowaJump to:

  13. City of Buford, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (UtilityBenham,Bowie,TennesseeMinnesota

  14. City of Cairo, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley, Idaho (Utility Company) Jump

  15. City of Doerun, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,Columbus Place:Cuero,Dike, Iowa

  16. City of Elberton, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,ColumbusDurant,Rapids,Elba, Alabama

  17. City of Ellaville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,ColumbusDurant,Rapids,Elba,Point,Ellaville,

  18. City of Grantville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtdEllsworth, IowaGraettinger, Iowa (UtilityGrantville, Georgia

  19. City of Moultrie, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler, Iowa (Utility Company)Menasha,MonroeMoultrie, Georgia (Utility

  20. City of Thomasville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler, IowaScottsboro,Kansas (UtilityCity of Thomasville, Georgia

  1. Appling County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex A S Jump to:AngolaEnergy ManagementGeorgia: Energy Resources

  2. Baker County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuels Brasil JumpGeorgia: Energy Resources Jump to:

  3. Banks County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuelsOpen EnergyBanks County, Georgia: Energy

  4. Calhoun County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank, Maine:Kansas: EnergyCalendarCalhoun County, Alabama: EnergyGeorgia: Energy

  5. Bibb County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental JumpInformation BeaufortBentMichigan:Greece) JumpGeorgia: Energy Resources Jump

  6. Burke County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank, Maine: EnergyEnergyOhio: EnergyNorthInformationBurke County, Georgia:

  7. Coffee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company) JumpIowa: EnergyEnergy InformationGeorgia: Energy

  8. Cook County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)| Open(Evans, EtInformation ControlGeorgia: Energy

  9. Dade County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstruments Inc Jump to:67-2006-12Dabbrook Services Jump to:|Georgia:

  10. Chatham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR JumpMaine: Energy Resources JumpNebraska: EnergyGeorgia: Energy

  11. Cherokee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR JumpMaine: EnergyEnergyEnergyChengdu ChinaGeorgia: Energy

  12. City of Cartersville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurch Point,Blue Hill, NebraskaIllinoisCartersville, Georgia

  13. City of Covington, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurch Point,Blue Hill,MissouriClewiston,CityCity ofGeorgia

  14. City of Mansfield, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurchFontanelle, IowaIowaCity ofGeorgia (Utility Company) Jump

  15. Clayton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company) Jump to:New York:Clay County,NorthGeorgia: Energy Resources

  16. Fulton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePowerEdistoWhiskeyFootprint VenturesColorado:Georgia: Energy Resources Jump

  17. City of Washington, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla,ThermalCubaParker,Georgia (Utility Company) Jump to:

  18. Accelerator Production Options for 99MO

    SciTech Connect (OSTI)

    Bertsche, Kirk; /SLAC

    2010-08-25

    Shortages of {sup 99}Mo, the most commonly used diagnostic medical isotope, have caused great concern and have prompted numerous suggestions for alternate production methods. A wide variety of accelerator-based approaches have been suggested. In this paper we survey and compare the various accelerator-based approaches.

  19. Air Quality and Road Emission Results for Fort Stewart, Georgia

    SciTech Connect (OSTI)

    Kirkham, Randy R.; Driver, Crystal J.; Chamness, Mickie A.; Barfuss, Brad C.

    2004-02-02

    The Directorate of Public Works Environmental & Natural Resources Division (Fort Stewart /Hunter Army Airfield) contracted with the Pacific Northwest National Laboratory (PNNL) to monitor particulate matter (PM) concentrations on Fort Stewart, Georgia. The purpose of this investigation was to establish a PM sampling network using monitoring equipment typically used in U.S. Environmental Protection Agency (EPA) ''saturation sampling'', to determine air quality on the installation. In this initial study, the emphasis was on training-generated PM, not receptor PM loading. The majority of PM samples were 24-hr filter-based samples with sampling frequency ranging from every other day, to once every six days synchronized with the EPA 6th day national sampling schedule. Eight measurement sites were established and used to determine spatial variability in PM concentrations and evaluate whether fluctuations in PM appear to result from training activities and forest management practices on the installation. Data collected to date indicate the average installation PM2.5 concentration is lower than that of nearby urban Savannah, Georgia. At three sites near the installation perimeter, analyses to segregate PM concentrations by direction of air flow across the installation boundary indicate that air (below 80 ft) leaving the installation contains less PM2.5 than that entering the installation. This is reinforced by the observation that air near the ground is cleaner on average than the air at the top of the canopy.

  20. Role of SrMoO{sub 4} in Sr{sub 2}MgMoO{sub 6} synthesis

    SciTech Connect (OSTI)

    Vasala, S.; Yamauchi, H.; Karppinen, M.

    2011-05-15

    Here we investigate the elemental and phase compositions during the solid-state synthesis of the promising SOFC-anode material, Sr{sub 2}MgMoO{sub 6}, and demonstrate that molybdenum does not notably evaporate under the normal synthesis conditions with temperatures up to 1200 {sup o}C due to the formation of SrMoO{sub 4} as an intermediate product at low temperatures, below 600 {sup o}C. However, partial decomposition of the Sr{sub 2}MgMoO{sub 6} phase becomes evident at the higher temperatures ({approx}1500 {sup o}C). The effect of SrMoO{sub 4} on the electrical conductivity of Sr{sub 2}MgMoO{sub 6} is evaluated by preparing a series of Sr{sub 2}MgMoO{sub 6} samples with different amounts of additional SrMoO{sub 4}. Under the reducing operation conditions of an SOFC anode the insulating SrMoO{sub 4} phase is apparently reduced to the highly conductive SrMoO{sub 3} phase. Percolation takes place with 20-30 wt% of SrMoO{sub 4} in a Sr{sub 2}MgMoO{sub 6} matrix, with a notable increase in electrical conductivity after reduction. Conductivity values of 14, 60 and 160 S/cm are determined at 800 {sup o}C in 5% H{sub 2}/Ar for the Sr{sub 2}MgMoO{sub 6} samples with 30, 40 and 50 wt% of added SrMoO{sub 4}, respectively. -- Graphical abstract: SrMoO{sub 4} is formed at low temperatures during the synthesis of Sr{sub 2}MgMoO{sub 6}, which prevents the volatilization of Mo from typical precursor mixtures of this promising SOFC anode material. SrMoO{sub 4} is insulating and it is often found as an impurity in Sr{sub 2}MgMoO{sub 6} samples. It is however readily reduced to highly conducting SrMoO{sub 3}. Composites of Sr{sub 2}MgMoO{sub 6} and SrMoO{sub 3} show increased electrical conductivities compared to pure Sr{sub 2}MgMoO{sub 6} under the reductive operation conditions of an SOFC anode. Display Omitted Highlights: {yields} Sr{sub 2}MgMoO{sub 6} is a promising SOFC anode material. {yields} During the Sr{sub 2}MgMoO{sub 6} synthesis SrMoO{sub 4} is formed at low temperatures. {yields} Formation of SrMoO{sub 4} effectively prevents volatilization of Mo at high temperatures. {yields} Insulating SrMoO{sub 4} reduces to highly conductive SrMoO{sub 3} under SOFC-anode conditions. {yields} Composites of Sr{sub 2}MgMoO{sub 6} and SrMoO{sub 3} show high electrical conductivities.

  1. Development of CaMoO4 crystal scintillators for double beta decay experiment with 100-Mo

    E-Print Network [OSTI]

    A. N. Annenkov; O. A. Buzanov; F. A. Danevich; A. Sh. Georgadze; S. K. Kim; H. J. Kim; Y. D. Kim; V. V. Kobychev; V. N. Kornoukhov; M. Korzhik; J. I. Lee; O. Missevitch; V. M. Mokina; S. S. Nagorny; A. S. Nikolaiko; D. V. Poda; R. B. Podviyanuk; D. J. Sedlak; O. G. Shkulkova; J. H. So; I. M. Solsky; V. I. Tretyak; S. S. Yurchenko

    2007-07-10

    Energy resolution, alpha/beta ratio, pulse-shape discrimination for gamma rays and alpha particles, temperature dependence of scintillation properties, and radioactive contamination were studied with CaMoO4 crystal scintillators. A high sensitivity experiment to search for neutrinoless double beta decay of 100-Mo by using CaMoO4 scintillators is discussed.

  2. Microscale solar cells for high concentration on polycrystalline Cu(In,Ga)Se2 Myriam Paire,1,2,3,4,a)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    thin film solar cell material,7 and efficiencies over 20% were achieved recently. We study CIGS to decrease with illumination. The device described in this letter is a glass/Mo/CIGS/ CdS/ZnO solar cellMicroscale solar cells for high concentration on polycrystalline Cu(In,Ga)Se2 thin films Myriam

  3. sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage

    SciTech Connect (OSTI)

    Waddell, Michael

    2014-09-30

    This study focuses on evaluating the feasibility and suitability of using the Jurassic/Triassic (J/TR) sediments of the South Georgia Rift basin (SGR) for CO2 storage in southern South Carolina and southern Georgia The SGR basin in South Carolina (SC), prior to this project, was one of the least understood rift basin along the east coast of the U.S. In the SC part of the basin there was only one well (Norris Lightsey #1) the penetrated into J/TR. Because of the scarcity of data, a scaled approach used to evaluate the feasibility of storing CO2 in the SGR basin. In the SGR basin, 240 km (~149 mi) of 2-D seismic and 2.6 km2 3-D (1 mi2) seismic data was collected, process, and interpreted in SC. In southern Georgia 81.3 km (~50.5 mi) consisting of two 2-D seismic lines were acquired, process, and interpreted. Seismic analysis revealed that the SGR basin in SC has had a very complex structural history resulting the J/TR section being highly faulted. The seismic data is southern Georgia suggest SGR basin has not gone through a complex structural history as the study area in SC. The project drilled one characterization borehole (Rizer # 1) in SC. The Rizer #1 was drilled but due to geologic problems, the project team was only able to drill to 1890 meters (6200 feet) instead of the proposed final depth 2744 meters (9002 feet). The drilling goals outlined in the original scope of work were not met. The project was only able to obtain 18 meters (59 feet) of conventional core and 106 rotary sidewall cores. All the conventional core and sidewall cores were in sandstone. We were unable to core any potential igneous caprock. Petrographic analysis of the conventional core and sidewall cores determined that the average porosity of the sedimentary material was 3.4% and the average permeability was 0.065 millidarcy. Compaction and diagenetic studies of the samples determined there would not be any porosity or permeability at depth in SC. In Georgia there appears to be porosity in the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

  4. Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report

    SciTech Connect (OSTI)

    SC Energy Office: Southern Alliance for Clean Energy

    2013-02-12

    This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

  5. This article was downloaded by: [Georgia Tech Library] On: 10 April 2013, At: 14:09

    E-Print Network [OSTI]

    Wu, Jeff

    be independently verified with primary sources. The publisher shall not be liable for any loss, actions, claimsThis article was downloaded by: [Georgia Tech Library] On: 10 April 2013, At: 14:09 Publisher

  6. PLEASE SCROLL DOWN FOR ARTICLE This article was downloaded by: [Georgia Technology Library

    E-Print Network [OSTI]

    Lieuwen, Timothy C.

    doses should be independently verified with primary sources. The publisher shall not be liable for anyPLEASE SCROLL DOWN FOR ARTICLE This article was downloaded by: [Georgia Technology Library] On: 20

  7. GEORGIA INSTITUTE OF TECHNOLOGY COLLEGE OF ENGINEERING 1 College of Engineering

    E-Print Network [OSTI]

    Li, Mo

    Electrical and Computer Engineering Industrial and Systems Engineering Materials Science and Engineering and Biomolecular Engineering Civil and Environmental Engineering Electrical and Computer Engineering IndustrialGEORGIA INSTITUTE OF TECHNOLOGY · COLLEGE OF ENGINEERING 1 College of Engineering Aerospace

  8. University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program Program and scholarship between the two institutions. The two institutions are offering seed grants / pump-priming grants

  9. UMass INFORMSProfessor Anna Nagurney Dr. Garrow is an Associate Professor at the Georgia Institute of

    E-Print Network [OSTI]

    Nagurney, Anna

    at the Georgia Institute of Technology. She earned her Ph.D. at Northwestern University, with an emphasis and Logistics Society of INFORMS and Vice President of AGIFORS. Abstract: A new parameter estimation routine Management Models with Censored Data" " #12;

  10. Synthesis of galactosaminyl DD-chiro-inositols Georgia Marnera and Marc d'Alarcao*

    E-Print Network [OSTI]

    d'Alarcao, Marc

    Synthesis of galactosaminyl DD-chiro-inositols Georgia Marnera and Marc d'Alarcao* Michael Research.carres.2006.03.031 * Corresponding author. Tel.: +1 617 627 3686; fax: +1 617 627 3443; e-mail: marc

  11. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia

    SciTech Connect (OSTI)

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

  12. An Evaluation of Georgia's Institutional Conservation Program Preliminary Report - June 1989 

    E-Print Network [OSTI]

    Brown, M. L.; Downing, C.

    1989-01-01

    The Institutional Conservation Program (ICP) has been active in Georgia since 1980 and has distributed over $20 million in matching funds for conservation measures and energy studies. The purpose of the ICP is to reduce energy consumption in schools...

  13. EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

  14. Energy Conservation Recommendations, Implementation Costs, and Projected Paybacks for Georgia's Targeted Schools and Hospitals Conservation Program 

    E-Print Network [OSTI]

    Brown, M. L.; Moore, D. M.

    1988-01-01

    During the past year the Georgia Tech Research Institute performed technical assistance studies on over 100 school and hospital buildings under a program funded by the Governor's Office of Energy Resources. This program is known as the Targeted...

  15. Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel Funds

    E-Print Network [OSTI]

    Sherrill, David

    Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel funds may be used to meet any remaining costs not covered by the research advisor, GSF award___________________________________________________ Dates of Conference_____________________________________________________ Total estimated costs

  16. GEORGIA INSTITUTE OF TECHNOLOGY FABRICATED PROPERTY REPORT Revised 07-2014

    E-Print Network [OSTI]

    Li, Mo

    GEORGIA INSTITUTE OF TECHNOLOGY FABRICATED PROPERTY REPORT Revised 07-2014 TO: Property Control: ____________________________________________ Phone: _______________ COST OF PROPERTY Materials or Component Parts $ _______________ External Labor Costs $ _______________ Transportation $ _______________ Other Costs (explain on back

  17. Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel Funds

    E-Print Network [OSTI]

    Sherrill, David

    Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel funds may be used to meet any remaining costs not covered by the research advisor, SGA award_____________________________________________________ Total estimated costs for attending conference Transportation $_______________ Other Travel

  18. Computers and nautical archaeology: characterization of the C.S.S. Georgia wreck site 

    E-Print Network [OSTI]

    Baker, James Graham

    1982-01-01

    , Savannah District, to investigate, characterize, and make recommendations regarding the wreck site of a Civil War period Confederate ironclad vessel, the C. S. S. GEORGIA. The survey proved to be difficult, since visibility in the Savannah River around... than two hours per day. A study of the history of the C. S, S. GEORGIA left many questions unanswered, such as her length and breadth. In order to provide accu- rate information and a meaningful site assessment, a series of remote- sensing surveys...

  19. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  20. Catalytic Properties of Supported MoO3 Catalysts for Oxidative Dehydrogenation of Propane

    E-Print Network [OSTI]

    Iglesia, Enrique

    Catalytic Properties of Supported MoO3 Catalysts for Oxidative Dehydrogenation of Propane Kaidong The effects of MoOx structure on propane oxidative dehydrogenation (ODH) rates and selectivity were examined with those obtained on MoOx/ZrO2. On MoOx/Al2O3 catalysts, propane turnover rate increased with increasing Mo

  1. Demonstration of LED Street Lighting in Kansas City, MO Kinzey...

    Office of Scientific and Technical Information (OSTI)

    Street Lighting in Kansas City, MO Kinzey, Bruce R.; Royer, Michael P.; Hadjian, M.; Kauffman, Rick LED streetlighting; field illuminance measurement LED streetlighting; field...

  2. MoRu/Be multilayers for extreme ultraviolet applications

    DOE Patents [OSTI]

    Bajt, Sasa C. (Livermore, CA); Wall, Mark A. (Stockton, CA)

    2001-01-01

    High reflectance, low intrinsic roughness and low stress multilayer systems for extreme ultraviolet (EUV) lithography comprise amorphous layers MoRu and crystalline Be layers. Reflectance greater than 70% has been demonstrated for MoRu/Be multilayers with 50 bilayer pairs. Optical throughput of MoRu/Be multilayers can be 30-40% higher than that of Mo/Be multilayer coatings. The throughput can be improved using a diffusion barrier to make sharper interfaces. A capping layer on the top surface of the multilayer improves the long-term reflectance and EUV radiation stability of the multilayer by forming a very thin native oxide that is water resistant.

  3. Mo-99 | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal GasAdministration Medal of Honor recipients honored at Y-12CONTROLLEDStatements |Mo-99 |

  4. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  5. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  6. Structure and electronic properties of Cu nanoclusters supported on Mo2C(001) and MoC(001) surfaces

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Posada-Pérez, Sergio; Viñes, Francesc; Rodríguez, José A.; Illas, Francesc

    2015-09-15

    In this study, the atomic structure and electronic properties of Cun nanoclusters (n = 4, 6, 7, and 10) supported on cubic nonpolar ?-MoC(001) and orthorhombic C- or Mo-terminated polar ?-Mo2C(001) surfaces have been investigated by means of periodic density functional theory based calculations. The electronic properties have been analyzed by means of the density of states, Bader charges, and electron localization function plots. The Cu nanoparticles supported on ?-Mo2C(001), either Mo- or C-terminated, tend to present a two-dimensional structure whereas a three-dimensional geometry is preferred when supported on ?-MoC(001), indicating that the Mo:C ratio and the surface polarity playmore »a key role determining the structure of supported clusters. Nevertheless, calculations also reveal important differences between the C- and Mo-terminated ?-Mo2C(001) supports to the point that supported Cu particles exhibit different charge states, which opens a way to control the reactivity of these potential catalysts.« less

  7. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  8. Energy conserving site design case study: Shenandoah, Georgia. Final report

    SciTech Connect (OSTI)

    Not Available

    1980-01-01

    The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

  9. Fragile structural transition in Mo3Sb7

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yan, Jiaqiang -Q.; McGuire, Michael A; May, Andrew F; Parker, David S.; Mandrus, D. G.; Sales, Brian C.

    2015-08-10

    Mo3Sb7 single crystals lightly doped with Cr, Ru, or Te are studied in order to explore the interplay between superconductivity, magnetism, and the cubic-tetragonal structural transition. The structural transition at 53 K is extremely sensitive to Ru or Te substitution which introduces additional electrons, but robust against Cr substitution. We observed no sign of a structural transition in superconducting Mo2.91Ru0.09Sb7 and Mo3Sb6.975Te0.025. In contrast, 3 at.% Cr doping only slightly suppresses the structural transition to 48 K while leaving no trace of superconductivity above 1.8 K. Analysis of magnetic properties suggests that the interdimer interaction in Mo3Sb7 is near amore »critical value and essential for the structural transition. Futhermore, all dopants suppress the superconductivity of Mo3Sb7. The tetragonal structure is not necessary for superconductivity.« less

  10. Neutrino scattering off the stable even-even Mo isotopes

    SciTech Connect (OSTI)

    Balasi, K. G.; Kosmas, T. S.; Divari, P. C. [Theoretical Physics Section, University of Ioannina, GR 45110 Ioannina (Greece)

    2009-11-09

    Inelastic neutrino-nucleus reaction cross sections are studied focusing on the neutral current processes. Particularly, we investigate the angular and initial neutrino-energy dependence of the differential and integrated cross sections for low and intermediate energies of the incoming neutrino. The nuclear wave functions for the initial and final nuclear states are constructed in the context of the quasi-particle random phase approximation (QRPA) tested on the reproducibility of the low-lying energy spectrum. The results presented here refer to the isotopes Mo{sup 92}, Mo{sup 94}, Mo{sup 96}, Mo{sup 98} and Mo{sup 100}. These isotopes could play a significant role in supernova neutrino detection in addition to their use in double-beta and neutrinoless double-beta decay experiments (e.g. MOON, NEMO III)

  11. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  12. APS-DPP 2004, Savannah, Georgia 1 of 18T. Biewer, November 19th Edge Ion Heating by Launched High

    E-Print Network [OSTI]

    Biewer, Theodore

    Society Division of Plasma Physics Meeting Savannah, Georgia, 2004 #12;46th APS-DPP 2004, Savannah46th APS-DPP 2004, Savannah, Georgia 1 of 18T. Biewer, November 19th , 2004 Edge Ion Heating Physics Laboratory P.M. Ryan Oak Ridge National Laboratory and the NSTX Team 46th American Physical

  13. Ossabest: E-Exploration of Ossabaw Island for Students and Teachers: Information Technologies Education Meets Georgia Performance Standards

    E-Print Network [OSTI]

    Reed, Joy

    Ossabest: E-Exploration of Ossabaw Island for Students and Teachers: Information Technologies on a Georgia barrier island. Teaching and learning experiences are enhanced by educational materials designed to meet Georgia Performance Standards. A project web portal offers custom sub-systems created for defined

  14. 190 Ben Burton Road, Suite C Bogart, Georgia 30622 706.354.1800 Fax: 706.354.6867 www.geohydro.com

    E-Print Network [OSTI]

    Arnold, Jonathan

    ) The following table presents seismic design values interpolated from applicable seismic hazard maps from The University of Georgia 382 East Broad Street Athens, Georgia 30602 Revised Report of Probabilistic Seismic probabilistic seismic hazard analysis (PSHA) for the main campus of The University of Georgia in Athens

  15. Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS{sub 2}

    SciTech Connect (OSTI)

    Wei, Xiaoxu; Yu, Zhihao; Cheng, Ying; Yu, Linwei; Wang, Junzhuan Wang, Xinran; Shi, Yi; Hu, Fengrui; Wang, Xiaoyong; Xiao, Min

    2014-12-15

    In this work, we report a strong photoluminescence (PL) enhancement of monolayer MoS{sub 2} under different treatments. We find that by simple ambient annealing treatment in the range of 200?°C to 400?°C, the PL emission can be greatly enhanced by a factor up to two orders of magnitude. This enhancement can be attributed to two factors: first, the formation of Mo-O bonds during ambient exposure introduces an effective p-doping in the MoS{sub 2} layer; second, localized electrons formed around Mo-O bonds related defective sites where the electrons can be effectively localized with higher binding energy resulting in efficient radiative excitons recombination. Time resolved PL decay measurement showed that longer lifetime of the treated sample consistent with the higher quantum efficiency in PL. These results give more insights to understand the luminescence properties of the MoS{sub 2}.

  16. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect (OSTI)

    Wade, M. [Oak Ridge National Lab., TN (United States); Billig, P. [Camp Dresser and McKee, Inc., Denver, CO (United States)

    1993-05-01

    Landfill No. 4 and the sludge lagoon at Robins Air Force Base, Warner Robins, Georgia, were added to the United States Environmental Protection Agency (EPA) National Priorities List in 1987 because of highpotential for contaminant migration. Warner Robins is located approximately 90 miles southeast of Atlanta. In 1990 CH2M HILL conducted a Remedial Investigation at the base that recommended that further ecological assessment investigations be conducted (CH2M HILL 1990). The subject paper is the result of this recommendation. The ecological study was carried out by the Hazardous Waste Remedial Actions Program (HAZWRAP)Division of Martin Marietta Energy Systems, Inc., working jointly with its subcontractor CDM (CDM 1992a). The primary area of investigation (Zone 1) included the sludge lagoon, Landfill No. 4, the wetland area east of the landfill and west of Hannah Road (including two sewage treatment ponds), and the area between Hannah Road and Horse Creek (Fig. 1). The bottomland forest wetlands of Zone 1 extend from the landfill east to Horse Creek. Surface water and groundwater flow across Zone 1 is generally in an easterly direction toward Horse Creek. Horse Creek is a south-flowing tributary of the Ocmulgee River Floodplain. The objective of the study was to perform a quantitative analysis of ecological risk associated with the ecosystems present in Zone 1. This investigation was unique because the assessment was to be based upon many measurement endpoints resulting in both location-specific data and data that would assess the condition of the overall ecosystem. The study was segregated into five distinct field investigations: hydrology, surface water and sediment, aquatic biology, wetlands ecology, and wildlife biology.

  17. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  18. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  19. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  20. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  1. 9 Cr-- 1 Mo steel material for high temperature application

    DOE Patents [OSTI]

    Jablonski, Paul D; Alman, David; Dogan, Omer; Holcomb, Gordon; Cowen, Christopher

    2012-11-27

    One or more embodiments relates to a high-temperature, titanium alloyed, 9 Cr-1 Mo steel exhibiting improved creep strength and oxidation resistance at service temperatures up to 650.degree. C. The 9 Cr-1 Mo steel has a tempered martensite microstructure and is comprised of both large (0.5-3 .mu.m) primary titanium carbides and small (5-50 nm) secondary titanium carbides in a ratio of. from about 1:1.5 to about 1.5:1. The 9 Cr-1 Mo steel may be fabricated using exemplary austenizing, rapid cooling, and tempering steps without subsequent hot working requirements. The 9 Cr-1 Mo steel exhibits improvements in total mass gain, yield strength, and time-to-rupture over ASTM P91 and ASTM P92 at the temperature and time conditions examined.

  2. Q value of the 100Mo Double-Beta Decay

    E-Print Network [OSTI]

    S. Rahaman; V. -V. Elomaa; T. Eronen; J. Hakala; A. Jokinen; J. Julin; A. Kankainen; A. Saastamoinen; J. Suhonen; C. Weber; J. Äystö

    2007-12-20

    Penning trap measurements using mixed beams of 100Mo - 100Ru and 76Ge - 76Se have been utilized to determine the double-beta decay Q-values of 100Mo and 76Ge with uncertainties less than 200 eV. The value for 76Ge, 2039.04(16) keV is in agreement with the published SMILETRAP value. The new value for 100Mo, 3034.40(17) keV is 30 times more precise than the previous literature value, sufficient for the ongoing neutrinoless double-beta decay searches in 100Mo. Moreover, the precise Q-value is used to calculate the phase-space integrals and the experimental nuclear matrix element of double-beta decay.

  3. MO"BIUS-INVARIANT KNOT ENERGIES R.B. KUSNER

    E-Print Network [OSTI]

    Sullivan, John M.

    MO"BIUS-INVARIANT KNOT ENERGIES R.B. KUSNER, Urbana, IL, USA 61801-2975 There has been recent interest in knot energies among mathematicians and na* *tural scientists. When discretized, such energies can lead to effective algorith* *ms

  4. Co-Mo Electric Cooperative- Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Co-Mo Electric Cooperative provides rebates to its residential and commercial members who install air source, dual fuel, and/or geothermal heat pumps, and certain energy efficient appliances. Heat...

  5. Microstructures in rapidly solidified Ni-Mo alloys

    SciTech Connect (OSTI)

    Jayaraman, N.; Tewari, S.N.; Hemker, K.J.; Glasgow, T.K.

    1985-01-01

    Ni-Mo alloys of compositions ranging from pure Ni to Ni-40 at % Mo were rapidly solidified by chill block melt spinning in vacuum and were examined by optical metallography, x-ray diffraction and transmission electron microscopy. Rapid solidification resulted in an extension of molybdenum solubility in nickel from 28 to 37.5 at %. A number of different phases and microstructures were seen at different depths (solidification conditions) from the quenched surface of the melt spun ribbons.

  6. BYRDINE F. LEWIS SCHOOL OF NURSING AND HEALTH PROFESSIONS GEORGIA STATE UNIVERSITY

    E-Print Network [OSTI]

    Frantz, Kyle J.

    1 BYLAWS* BYRDINE F. LEWIS SCHOOL OF NURSING AND HEALTH PROFESSIONS GEORGIA STATE UNIVERSITY Professions: April 4, 2013 #12;2 ARTICLE I PURPOSE Section 1. To provide the essential framework governing Professions (BFLSNHP) that is composed of the School of Nursing, Departments of Nutrition, Physical Therapy

  7. Approved Program of Study for Undergraduate Minors Georgia Institute of Technology

    E-Print Network [OSTI]

    Sherrill, David

    of depth courses related to energy systems. A list of acceptable courses which meet the depth requirementApproved Program of Study for Undergraduate Minors Georgia Institute of Technology Office of the Registrar 2015-2016 Minor in Energy Systems (Track for Chemistry and Biochemistry Students) Please type

  8. Curriculum Innovation Award Center for the Enhancement of Teaching and Learning, Georgia Tech

    E-Print Network [OSTI]

    Gaucher, Eric

    Curriculum Innovation Award Center for the Enhancement of Teaching and Learning, Georgia Tech Nomination Packet for Dr. Tristan Utschig February 2015 Table of Contents Description of the Innovation . . . . . . 1 Problem or student learning issue it addresses 1 Objectives of the innovation 2 Learning outcomes

  9. Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia Institute of Technology

    E-Print Network [OSTI]

    California at Davis, University of

    Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia or organization) DOT - $92,292.15 Total Project Cost $92,292.15 Agency ID or Contract Number DTRT13-G-UTC29 Start and End Dates November 1, 2013 ­ June 30, 2015 Brief Description of Research Project Local governments

  10. Recommendations for Improving Fecal Coliform Pollution Control in Gwinnett County, Georgia

    E-Print Network [OSTI]

    Radcliffe, David

    Recommendations for Improving Fecal Coliform Pollution Control in Gwinnett County, Georgia Upper for Improving Fecal Coliform Pollution Control 2 1.0 BACKGROUND and INTRODUCTION The 1972 Amendments to the Federal Clean Water Act require the creation of a Total Maximum Daily Load (TMDL) for a body of water

  11. Color Removal from Pulp Mill Effluent Using Coal Ash Produced from Georgia Coal Combustion Power Plants

    E-Print Network [OSTI]

    Hutcheon, James M.

    Color Removal from Pulp Mill Effluent Using Coal Ash Produced from Georgia Coal Combustion Power color from pulp mill effluent using coal ash. Prevent coal ash adsorbent from leaching arsenic, chromium, lead, and zinc. Define a treatment procedure using coal ash that will result in the maximum

  12. The Georgia Tech Unmanned Aerial Research Vehicle: GTMax Eric N. Johnson* and Daniel P. Schrage

    E-Print Network [OSTI]

    Johnson, Eric N.

    The Georgia Tech Unmanned Aerial Research Vehicle: GTMax Eric N. Johnson* and Daniel P. Schrage This paper describes the design, development, and operation of a research Unmanned Aerial Vehicle (UAV be utilized. INTRODUCTION This paper presents the development of an open system Unmanned Aerial Vehicle (UAV

  13. Ethanol Conversion on Cyclic (MO3)3 (M = Mo, W) Clusters

    SciTech Connect (OSTI)

    Li, Zhenjun; Fang, Zongtang; Kelley, Matthew S.; Kay, Bruce D.; Rousseau, Roger J.; Dohnalek, Zdenek; Dixon, David A.

    2014-03-06

    Oxides of molybdenum and tungsten are an important class of catalytic materials with applications ranging from isomerization of alkanes and alkenes, partial oxidation of alcohols, selective reduction of nitric oxide and metathesis of alkeness.[1-10] While many studies have focused on the structure - function relationships, the nature of high catalytic activity is still being extensively investigated. There is a general agreement that the activity of supported MOx (M = W, Mo) catalysts is correlated with the presence of acidic sites, where the catalytic activity is strongly affected by the type of oxide support, delocalization of electron density, structures of tungsten oxide domains and presence of protons

  14. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  15. Semi-automated lab-on-a-chip for dispensing GA-68 radiotracers

    SciTech Connect (OSTI)

    Weinberg, Irving

    2014-03-12

    We solved a technical problem that is hindering American progress in molecular medicine, and restricting US citizens from receiving optimal diagnostic care. Specifically, the project deals with a mother/daughter generator of positron-emitting radiotracers (Ge-68/Ga-68). These generator systems are approved in Europe but cannot be used in the USA, because of safety issues related to possible breakthrough of long-lived Ge-68 (mother) atoms. Europeans have demonstrated abilities of Ga-68-labeled radiotracers to image cancer foci with high sensitivity and specificity, and to use such methods to effectively plan therapy.The USA Food and Drug Administration (FDA) and Nuclear Regulatory Commission (NRC) have taken the position that every patient administration of Ga-68 should be preceded by an assay demonstrated that Ge-68 breakthrough is within acceptable limits. Breakthrough of parent elements is a sensitive subject at the FDA, as evidenced by the recent recall of Rb-82 generators due to inadvertent administrations of Sr-82. Commercially, there is no acceptable rapid method for assaying breakthrough of Ge-68 prior to each human administration. The gamma emissions of daughter Ga-68 have higher energies than the parent Ge-68, so that the shielding assays typically employed for Mo-99/Tc-99m generators cannot be applied to Ga-68 generators. The half-life of Ga-68 is 68 minutes, so that the standard 10-half-life delay (used to assess breakthrough in Sr-82/Rb-82 generators) cannot be applied to Ga-68 generators. As a result of the aforementioned regulatory requirements, Ga-68 generators are sold in the USA for animal use only.The American clinical community’s inability to utilize Ga-68 generators impairs abilities to treat patients domestically, and puts the USA at a disadvantage in developing exportable products. The proposed DOE project aimed to take advantage of recent technological advances developed for lab-on-a-chip (LOC) applications. Based on our experiences constructing such devices, the proposed microfluidics-based approach could provide cost-effective validation of breakthrough compliance in minutes.

  16. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  17. Quadruply Bonded Dimetal Units Supported by 2,4,6-Triisopropylbenzoates MM(TiPB)4 (MM ) Mo2, MoW, and W2)

    E-Print Network [OSTI]

    Turro, Claudia

    Quadruply Bonded Dimetal Units Supported by 2,4,6-Triisopropylbenzoates MM(TiPB)4 (MM ) Mo2, Mo, and cyclic voltammetry) of the new compounds MM(TiPB)4, where MM ) MoW and W2 and TiPB ) 2 in the visible region of the spectrum that are assigned to MM to arylcarboxylate * transitions, 1 MLCT. Each

  18. Coated U(Mo) Fuel: As-Fabricated Microstructures

    SciTech Connect (OSTI)

    Emmanuel Perez; Dennis D. Keiser, Jr.; Ann Leenaers; Sven Van den Berghe; Tom Wiencek

    2014-04-01

    As part of the development of low-enriched uranium fuels, fuel plates have recently been tested in the BR-2 reactor as part of the SELENIUM experiment. These fuel plates contained fuel particles with either Si or ZrN thin film coating (up to 1 µm thickness) around the U-7Mo fuel particles. In order to best understand irradiation performance, it is important to determine the starting microstructure that can be observed in as-fabricated fuel plates. To this end, detailed microstructural characterization was performed on ZrN and Si-coated U-7Mo powder in samples taken from AA6061-clad fuel plates fabricated at 500°C. Of interest was the condition of the thin film coatings after fabrication at a relatively high temperature. Both scanning electron microscopy and transmission electron microscopy were employed. The ZrN thin film coating was observed to consist of columns comprised of very fine ZrN grains. Relatively large amounts of porosity could be found in some areas of the thin film, along with an enrichment of oxygen around each of the the ZrN columns. In the case of the pure Si thin film coating sample, a (U,Mo,Al,Si) interaction layer was observed around the U-7Mo particles. Apparently, the Si reacted with the U-7Mo and Al matrix during fuel plate fabrication at 500°C to form this layer. The microstructure of the formed layer is very similar to those that form in U-7Mo versus Al-Si alloy diffusion couples annealed at higher temperatures and as-fabricated U-7Mo dispersion fuel plates with Al-Si alloy matrix fabricated at 500°C.

  19. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  20. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  1. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  2. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  3. A Unit of the University System of Georgia An Equal Education and Employment Opportunity Institution Environmental Health and Safety

    E-Print Network [OSTI]

    Li, Mo

    A Unit of the University System of Georgia An Equal Education and Employment Opportunity Institution Environmental Health and Safety GT Fire Safety Office 955 Fowler Street, 3rd Floor Room 301A

  4. Georgia Southern University Career Services Williams Center (912) 478-5197 www.georgiasouthern.edu/career/ Explore. Experience. Excel.

    E-Print Network [OSTI]

    Hutcheon, James M.

    · Enterprise Resource Planning Sys. (SAP) · Accounting Information Systems · Business Application Development Developers · Project Analysts · Technical Consultant · Systems Programmer · Internet Developers · Application System Managers · Project Managers What Can I Do With A Major In . . . INFORMATION SYSTEMS #12;Georgia

  5. EA-1865: Department of Energy Loan Guarantee to Kior, Inc., for Biorefinery Facilities in Georgia, Mississippi, and Texas

    Broader source: Energy.gov [DOE]

    This EA will evaluate the environmental impacts of a proposal to issue a Federal loan guarantee to Kior, Inc., for biorefinery facilities in Georgia, Mississippi, and Texas. This EA is on hold.

  6. c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering.

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    c° Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School. If the MOSFET is in the pinch-off region, the following equations for ID hold: ID = K (VGS - VT H)2 (5) 2 #12

  7. Tuning magnetism of monolayer MoS{sub 2} by doping vacancy and applying strain

    SciTech Connect (OSTI)

    Zheng, Huiling; Yang, Baishun; Han, Ruilin; Du, Xiaobo; Yan, Yu; Wang, Dingdi

    2014-03-31

    In view of important role of inducing and manipulating the magnetism in two-dimensional materials for the development of low-dimensional spintronic devices, the influences of strain on electronic structure and magnetic properties of commonly observed vacancies doped monolayer MoS{sub 2} are investigated using first-principles calculations. It is shown that unstrained V{sub S}, V{sub S2}, and V{sub MoS3} doped monolayer MoS{sub 2} systems are nonmagnetic, while the ground state of unstrained V{sub MoS6} doped system is magnetic and the magnetic moment is contributed mainly by six Mo atoms around V{sub MoS6}. In particular, tensile strain can induce magnetic moments in V{sub S}, V{sub S2}, and V{sub MoS3} doped monolayer MoS{sub 2} due to the breaking of Mo–Mo metallic bonds around the vacancies, while the magnetization induced by V{sub MoS6} can be effectively manipulated by equibiaxial strain due to the change of Mo–Mo metallic bonds around V{sub MoS6} under strains.

  8. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  9. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  10. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  11. An EnergyDriven Approach to Linkage Unfolding Jason H. Cantarella # Erik D. Demaine + Hayley N. Iben # James F. O'Brien

    E-Print Network [OSTI]

    Demaine, Erik

    . This mo­ tion is piecewise­linear (the simplest possible type of # University of Georgia, cantarel

  12. Ligand Bridging-Angle-Driven Assembly of Molecular Architectures Based on Quadruply Bonded Mo-Mo Dimers

    SciTech Connect (OSTI)

    Li, Jian-Rong; Yakovenko, Andrey A; Lu, Weigang; Timmons, Daren J; Zhuang, Wenjuan; Yuan, Daqiang; Zhou, Hong-Cai

    2010-12-15

    A systematic exploration of the assembly of Mo?(O?C-)?-based metal–organic molecular architectures structurally controlled by the bridging angles of rigid organic linkers has been performed. Twelve bridging dicarboxylate ligands were designed to be of different sizes with bridging angles of 0, 60, 90, and 120° while incorporating a variety of nonbridging functional groups, and these ligands were used as linkers. These dicarboxylate linkers assemble with quadruply bonded Mo–Mo clusters acting as nodes to give 13 molecular architectures, termed metal–organic polygons/polyhedra with metal cluster node arrangements of a linear shape, triangle, octahedron, and cuboctahedron/anti-cuboctahedron. The syntheses of these complexes have been optimized and their structures determined by single-crystal X-ray diffraction. The results have shown that the shape and size of the resulting molecular architecture can be controlled by tuning the bridging angle and size of the linker, respectively. Functionalization of the linker can adjust the solubility of the ensuing molecular assembly but has little or no effect on the geometry of the product. Preliminary gas adsorption, spectroscopic, and electrochemical properties of selected members were also studied. The present work is trying to enrich metal-containing supramolecular chemistry through the inclusion of well-characterized quadruply bonded Mo–Mo units into the structures, which can widen the prospect of additional electronic functionality, thereby leading to novel properties.

  13. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  14. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  15. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  16. Landscape influences on headwater streams on Fort Stewart, Georgia, USA

    SciTech Connect (OSTI)

    Jager, Yetta [ORNL; Bevelhimer, Mark S [ORNL; al., et. [Various Institutes

    2011-01-01

    Military landscapes represent a mixture of undisturbed natural ecosystems, developed areas, and lands that support different types and intensities of military training. Research to understand water-quality influences of military landscapes usually involves intensive sampling in a few watersheds. In this study, we developed a survey design of accessible headwater watersheds intended to improve our ability to distinguish land water relationships in general, and training influences, in particular, on Fort Stewart, GA. We sampled and analyzed water from watershed outlets. We successfully developed correlative models for total suspended solids (TSS), total nitrogen (TN), organic carbon (OC), and organic nitrogen (ON), which dominated in this blackwater ecosystem. TSS tended to be greater in samples after rainfall and during the growing season, and models that included %Wetland suggested a build-and-flush relationship. We also detected a positive association between TSS and tank-training, which suggests a need to intercept sediment-laden runoff from training areas. Models for OC showed a negative association with %Grassland. TN and ON both showed negative associations with %Grassland, %Wetland, and %Forest. Unexpected positive associations were observed between OC and equipmenttraining activity and between ON and %Bare ground ? Roads. Future studies that combine our survey-based approach with more intensive monitoring of the timing and intensity of training would be needed to better understand the mechanisms for these empirical relationships involving military training. Looking beyond local effects on Fort Stewart streams, we explore questions about how exports of OC and nitrogen from coastal military installations ultimately influence estuaries downstream.

  17. Solution-based thermodynamic modeling of the Ni-Al-Mo system...

    Office of Scientific and Technical Information (OSTI)

    (Al,Mo,Ni)0.75(Al,Mo,Ni)0.25. Thus, -fcc and -Ni3Al are modeled with a single Gibbs free energy function with appropriate treatment of the chemical ordering contribution. In...

  18. One Jump Ahead: Interspecies Interations and Distribution of Jumping Spiders on Mo'orea

    E-Print Network [OSTI]

    Pena, Danielle L

    2009-01-01

    Unlike continents, an island system such as Mo’orea oftenflora and fauna. In island systems, these relationships can

  19. Scintillating bolometers based on ZnMoO$_4$ and Zn$^{100}$MoO$_4$ crystals to search for 0$?$2$?$ decay of $^{100}$Mo (LUMINEU project): first tests at the Modane Underground Laboratory

    E-Print Network [OSTI]

    D. V. Poda; E. Armengaud; Q. Arnaud; C. Augier; A. Benoît; A. Benoît; L. Bergé; R. S. Boiko; T. Bergmann; J. Blümer; A. Broniatowski; V. Brudanin; P. Camus; A. Cazes; B. Censier; M. Chapellier; F. Charlieux; D. M. Chernyak; N. Coron; P. Coulter; G. A. Cox; F. A. Danevich; T. de Boissière; R. Decourt; M. De Jesus; L. Devoyon; A. -A. Drillien; L. Dumoulin; K. Eitel; C. Enss; D. Filosofov; A. Fleischmann; N. Fourches; J. Gascon; L. Gastaldo; G. Gerbier; A. Giuliani; M. Gros; L. Hehn; S. Henry; S. Hervé; G. Heuermann; V. Humbert; I. M. Ivanov; A. Juillard; C. Kéfélian; M. Kleifges; H. Kluck; V. V. Kobychev; F. Koskas; V. Kozlov; H. Kraus; V. A. Kudryavtsev; H. Le Sueur; M. Loidl; P. Magnier; E. P. Makarov; M. Mancuso; P. de Marcillac; S. Marnieros; C. Marrache-Kikuchi; A. Menshikov; S. G. Nasonov; X-F. Navick; C. Nones; E. Olivieri; P. Pari; B. Paul; Y. Penichot; G. Pessina; M. C. Piro; O. Plantevin; T. Redon; M. Robinson; M. Rodrigues; S. Rozov; V. Sanglard; B. Schmidt; V. N. Shlegel; B. Siebenborn; O. Strazzer; D. Tcherniakhovski; M. Tenconi; L. Torres; V. I. Tretyak; L. Vagneron; Ya. V. Vasiliev; M. Velazquez; O. Viraphong; R. J. Walker; M. Weber; E. Yakushev; X. Zhang; V. N. Zhdankov

    2015-02-04

    The technology of scintillating bolometers based on zinc molybdate (ZnMoO$_4$) crystals is under development within the LUMINEU project to search for 0$\

  20. Running A Conference Justin Zobel # Alistair Mo#at +

    E-Print Network [OSTI]

    Zobel, Justin

    Running A Conference Justin Zobel # Alistair Mo#at + Last updated August 2003 1 Introduction Much of the research in computer science is published in conferences, often complex a#airs in­ cluding paper presentations, tutorials, workshops, invited speakers, and tours and entertainment. Even a small conference has

  1. ECE 1228 Electromagnetics Theory Instructor Name: Mo Mojahedi

    E-Print Network [OSTI]

    Mojahedi, Mohammad

    ECE 1228 Electromagnetics Theory Instructor Name: Mo Mojahedi Office Location: Room SF2001D Tel: 416-978-0908 Email: mojahedi@waves.utoronto.ca Course Name and number: Electromagnetics Theory, ECE in Electromagnetics and Photonics. It revisits and expands some of the more fundamental electromagnetic laws

  2. (Robert P. Biuk-Aghai), , , : robertb@umac.mo

    E-Print Network [OSTI]

    Biuk-Aghai, Robert P.

    1 * (Robert P. Biuk-Aghai), , , : robertb@umac.mo (GIS) TM 30 1111 (PC) (PDAs) (ITU) 2002 [1] (PDAs) (GIS) (GIS)- 2 34 5 * . #12;2 2222 2001 2002 (PDA) PalmOS Pocket Telecommunication Union, 2003. http://www.itu.org/. 2. Robert P. Biuk-Aghai. A mobile GIS application for heavily

  3. Corrosion report for the U-Mo fuel concept

    SciTech Connect (OSTI)

    Henager, Jr., Charles H.; Bennett, Wendy D.; Doherty, Ann L.; Fuller, E. S.; Hardy, John S.; Omberg, Ronald P.

    2014-08-28

    The Fuel Cycle Research and Development (FCRD) program of the Office of Nuclear Energy (NE) has implemented a program to develop a Uranium-Molybdenum (U-Mo) metal fuel for Light Water Reactors (LWR)s. Uranium-Molybdenum fuel has the potential to provide superior performance based on its thermo-physical properties, which includes high thermal conductivity for less stored heat energy. With sufficient development, it may be able to provide the Light Water industry with a melt-resistant accident tolerant fuel with improved safety response. However, the corrosion of this fuel in reactor water environments needs to be further explored and optimized by additional alloying. The Pacific Northwest National Laboratory has been tasked with performing ex-reactor corrosion testing to characterize the performance of U-Mo fuel. This report documents the results of the effort to characterize and develop the U-Mo metal fuel concept for LWRs with regard to corrosion testing. The results of a simple screening test in buffered water at 30°C using surface alloyed U-10Mo is documented and discussed. The screening test was used to guide the selection of several potential alloy improvements that were found and are recommended for further testing in autoclaves to simulate PWR water conditions more closely.

  4. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  5. NeMO 2004 Cruise Report R/V Thomas G. Thompson

    E-Print Network [OSTI]

    NeMO 2004 Cruise Report R/V Thomas G. Thompson Compiled by Shannon Ristau and Susan Merle TN 173 18: Pictures from ROPOS Dives............................................................3 Figure 1: NeMO 2004....................................................9 1.0 NeMO 2004 SCIENCE SUMMARY (Bill Chadwick)........................................11 1

  6. Georgia Tech Manufacturing Institute | 813 Ferst Drive, N.W. | Atlanta, GA 30332-0560 | (404) 894-9100 | www.manufacturing.gatech.edu Manufacturing is in Georgia Tech's DNA: GTMI Binds it Together

    E-Print Network [OSTI]

    Das, Suman

    -suited for the rapidly evolving world of manufacturing. Collaboration and Innovation are Core Strengths Among GTMI partners · Awarded a grant to develop and lead the Consortium for Accelerated Innovation and Insertion for electronics, solar energy, woodworking and precision machining industries that allow companies to easily work

  7. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  8. Scintillating bolometers based on ZnMoO$_4$ and Zn$^{100}$MoO$_4$ crystals to search for 0$\

    E-Print Network [OSTI]

    Poda, D V; Arnaud, Q; Augier, C; Benoît, A; Bergé, L; Boiko, R S; Bergmann, T; Blümer, J; Broniatowski, A; Brudanin, V; Camus, P; Cazes, A; Censier, B; Chapellier, M; Charlieux, F; Chernyak, D M; Coron, N; Coulter, P; Cox, G A; Danevich, F A; de Boissière, T; Decourt, R; De Jesus, M; Devoyon, L; Drillien, A -A; Dumoulin, L; Eitel, K; Enss, C; Filosofov, D; Fleischmann, A; Fourches, N; Gascon, J; Gastaldo, L; Gerbier, G; Giuliani, A; Gros, M; Hehn, L; Henry, S; Hervé, S; Heuermann, G; Humbert, V; Ivanov, I M; Juillard, A; Kéfélian, C; Kleifges, M; Kluck, H; Kobychev, V V; Koskas, F; Kozlov, V; Kraus, H; Kudryavtsev, V A; Sueur, H Le; Loidl, M; Magnier, P; Makarov, E P; Mancuso, M; de Marcillac, P; Marnieros, S; Marrache-Kikuchi, C; Menshikov, A; Nasonov, S G; Navick, X-F; Nones, C; Olivieri, E; Pari, P; Paul, B; Penichot, Y; Pessina, G; Piro, M C; Plantevin, O; Redon, T; Robinson, M; Rodrigues, M; Rozov, S; Sanglard, V; Schmidt, B; Shlegel, V N; Siebenborn, B; Strazzer, O; Tcherniakhovski, D; Tenconi, M; Torres, L; Tretyak, V I; Vagneron, L; Vasiliev, Ya V; Velazquez, M; Viraphong, O; Walker, R J; Weber, M; Yakushev, E; Zhang, X; Zhdankov, V N

    2015-01-01

    The technology of scintillating bolometers based on zinc molybdate (ZnMoO$_4$) crystals is under development within the LUMINEU project to search for 0$\

  9. Facile synthesis of MoS{sub 2} and Mo{sub x}W{sub 1-x}S{sub 2} triangular monolayers

    SciTech Connect (OSTI)

    Lin, Zhong; Thee, Michael T.; Elías, Ana Laura; Feng, Simin; Fujisawa, Kazunori; Perea-López, Néstor; Carozo, Victor [Department of Physics and Center for 2Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Zhou, Chanjing [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Terrones, Humberto [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 122180 (United States); Terrones, Mauricio, E-mail: mut11@psu.edu [Department of Physics and Center for 2Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-09-01

    Single- and few-layered transition metal dichalcogenides, such as MoS{sub 2} and WS{sub 2}, are emerging two-dimensional materials exhibiting numerous and unusual physico-chemical properties that could be advantageous in the fabrication of unprecedented optoelectronic devices. Here we report a novel and alternative route to synthesize triangular monocrystals of MoS{sub 2} and Mo{sub x}W{sub 1-x}S{sub 2} by annealing MoS{sub 2} and MoS{sub 2}/WO{sub 3} precursors, respectively, in the presence of sulfur vapor. In particular, the Mo{sub x}W{sub 1-x}S{sub 2} triangular monolayers show gradual concentration profiles of W and Mo whereby Mo concentrates in the islands’ center and W is more abundant on the outskirts of the triangular monocrystals. These observations were confirmed by atomic force microscopy, and high-resolution transmission electron microscopy, as well as Raman and photoluminescence spectroscopy. The presence of tunable PL signals depending on the Mo{sub x}W{sub 1-x}S{sub 2} stoichiometries in 2D monocrystals opens up a wide range of applications in electronics and optoelectronics.

  10. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  11. Atlanta, Georgia 30332-0205 U.S.A. Phone: 4048942300 web site: http://www.isye.gatech.edu Fax: 4048942301

    E-Print Network [OSTI]

    Gaucher, Eric

    : 404·894·2301 A Unit of the University System of Georgia An Equal Education and Employment Opportunity, 2014 Dear Members of the CETL Awards Committee, I am pleased to nominate Assistant Professor Kamran://www.isye.gatech.edu Fax: 404·894·2301 A Unit of the University System of Georgia An Equal Education and Employment

  12. t h e s c h e l l e r c o l l e g e o f b u s i n e s s Georgia Tech PhD Program

    E-Print Network [OSTI]

    Li, Mo

    're creating a new standard in business education. Sincerely, Steve Salbu Dean of Georgia Tech's Schellert h e s c h e l l e r c o l l e g e o f b u s i n e s s Georgia Tech PhD Program Accounting, Organizational Behavior, Strategic Management Application and Admission Frequently Asked Questions Georgia Tech

  13. Thermal transport properties of metal/MoS{sub 2} interfaces from first principles

    SciTech Connect (OSTI)

    Mao, Rui; Kong, Byoung Don; Kim, Ki Wook, E-mail: kwk@ncsu.edu [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911 (United States)

    2014-07-21

    Thermal transport properties at the metal/MoS{sub 2} interfaces are analyzed by using an atomistic phonon transport model based on the Landauer formalism and first-principles calculations. The considered structures include chemisorbed Sc(0001)/MoS{sub 2} and Ru(0001)/MoS{sub 2}, physisorbed Au(111)/MoS{sub 2}, as well as Pd(111)/MoS{sub 2} with intermediate characteristics. Calculated results illustrate a distinctive dependence of thermal transfer on the details of interfacial microstructures. More specifically, the chemisorbed case with a stronger bonding exhibits a generally smaller interfacial thermal resistance than the physisorbed. Comparison between metal/MoS{sub 2} and metal/graphene systems suggests that metal/MoS{sub 2} is significantly more resistive. Further examination of lattice dynamics identifies the presence of multiple distinct atomic planes and bonding patterns at the interface as the key origins of the observed large thermal resistance.

  14. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  15. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  16. A multicolor, broadband (520m), quaternary-capped InAs/GaAs quantum dot infrared photodetector

    E-Print Network [OSTI]

    Perera, A. G. Unil

    , Mumbai 400076, India 2 Department of Physics & Astronomy, Georgia State University, Atlanta, Georgia. Using strain field and multi-band k Á p theory, we map specific bound-to-bound and bound

  17. Baldwin County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuels Brasil JumpGeorgia:BalchAlabama:

  18. Undercooled and rapidly quenched Ni-Mo alloys

    SciTech Connect (OSTI)

    Tewari, S.N.; Glasgow, T.K.

    1986-01-01

    Hypoeutectic, eutectic, and hypereutectic nickel-molybdenum alloys were rapidly solidified by both bulk undercooling and melt spinning techniques. Alloys were undercooled in both electromagnetic levitation and differential thermal analysis equipment. The rate of recalescence depended upon the degree of initial undercooling and the nature (faceted or nonfaceted) of the primary nucleating phase. Alloy melts were observed to undercool more in the presence of primary Beta (NiMo intermetallic) phase than in gamma (fcc solid solution) phase. Melt spinning resulted in an extension of molybdenum solid solubility in gamma nickel, from 28 to 37.5 at % Mo. Although the microstructures observed by undercooling and melt spinning were similar the microsegregation pattern across the gamma dendries was different. The range of microstructures evolved was analyzed in terms of the nature of the primary phase to nucleate, its subsequent dendritic growth, coarsening and fragmentation, and final solidification of interfenderitic liquid.

  19. Does MoSE cope with inland tsunamis hazard?

    E-Print Network [OSTI]

    Panza, Giuliano Francesco; Romanelli, Fabio

    2014-01-01

    In this work we use morphostructural zonation and pattern recognition techniques to identify a potential seismic source located inland very near Venice, and then we evaluate how a tsunami wave generated from this source can affect the MoSE gates if they are standing up (closed) during the tsunami event. From our simulation we get both peaks and troughs as first arrivals: the behavior of the barriers in these two situations could be a very important design matter.

  20. IRRADIATION PERFORMANCE OF U-Mo MONOLITHIC FUEL

    SciTech Connect (OSTI)

    M.K. Meyer; J. Gan; J.-F. Jue; D.D. Keiser; E. Perez; A. Robinson; D.M. Wachs; N. Woolstenhulme; G.L. Hofman; Y.-S. Kim

    2014-04-01

    High-performance research reactors require fuel that operates at high specific power to high fission density, but at relatively low temperatures. Research reactor fuels are designed for efficient heat rejection, and are composed of assemblies of thin-plates clad in aluminum alloy. The development of low-enriched fuels to replace high-enriched fuels for these reactors requires a substantially increased uranium density in the fuel to offset the decrease in enrichment. Very few fuel phases have been identified that have the required combination of very-high uranium density and stable fuel behavior at high burnup. UMo alloys represent the best known tradeoff in these properties. Testing of aluminum matrix U-Mo aluminum matrix dispersion fuel revealed a pattern of breakaway swelling behavior at intermediate burnup, related to the formation of a molybdenum stabilized high aluminum intermetallic phase that forms during irradiation. In the case of monolithic fuel, this issue was addressed by eliminating, as much as possible, the interfacial area between U-Mo and aluminum. Based on scoping irradiation test data, a fuel plate system composed of solid U-10Mo fuel meat, a zirconium diffusion barrier, and Al6061 cladding was selected for development. Developmental testing of this fuel system indicates that it meets core criteria for fuel qualification, including stable and predictable swelling behavior, mechanical integrity to high burnup, and geometric stability. In addition, the fuel exhibits robust behavior during power-cooling mismatch events under irradiation at high power.

  1. An APFIM and TEM study of Ni{sub 4}Mo precipitation in a commercial Ni-28% Mo-1.4% Fe-0.4% Cr wt. % alloy

    SciTech Connect (OSTI)

    Thomson, R.C.; Brown, N.; Bates, J.S. [Loughborough Univ. (United Kingdom). Inst. of Polymer Technology and Materials Engineering; Russell, K.F.; Miller, M.K. [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.

    1998-02-01

    Ni-Mo alloys containing at least 26 wt.% Mo have a negligible corrosion rate in boiling 10% hydrochloric acid and are therefore used in corrosive environments. A series of commercial Ni-Mo alloys has been developed with subtle variations in chemical composition. These alloys usually contain {approximately} 28 wt.% Mo with additions of up to 5% Fe and Cr. A significant amount of research has been performed to understand the microstructure and properties of these alloys, although most of the effort has concentrated on the Ni-Mo binary system. In some alloys with low Fe and Cr contents, a severe embrittlement problem has been observed due to the formation of the Ni{sub 4}Mo (D1{sub a}-ordered) phase within the microstructure. This research focuses on a commercial alloy with nominal composition Ni-28% Mo-1.4% Fe-0.4% Cr-0.1% Mn-0.003 wt.% C. The material supplied was a heat treatment coupon which had been attached to a large vessel during fabrication. Assessment of the chemical analysis of the alloy suggested that detrimental phases could be present or might appear during subsequent repair work. Therefore, it was important to assess the microstructural condition of the vessel, and in particular the kinetics of precipitation of Ni{sub 4}Mo.

  2. Single Phase Melt Processed Powellite (Ba,Ca) MoO{sub 4} For The Immobilization Of Mo-Rich Nuclear Waste

    SciTech Connect (OSTI)

    Brinkman, Kyle; Marra, James; Fox, Kevin; Reppert, Jason; Crum, Jarrod; Tang, Ming

    2012-09-17

    Crystalline and glass composite materials are currently being investigated for the immobilization of combined High Level Waste (HLW) streams resulting from potential commercial fuel reprocessing scenarios. Several of these potential waste streams contain elevated levels of transition metal elements such as molybdenum (Mo). Molybdenum has limited solubility in typical silicate glasses used for nuclear waste immobilization. Under certain chemical and controlled cooling conditions, a powellite (Ba,Ca)MoO{sub 4} crystalline structure can be formed by reaction with alkaline earth elements. In this study, single phase BaMoO{sub 4} and CaMoO{sub 4} were formed from carbonate and oxide precursors demonstrating the viability of Mo incorporation into glass, crystalline or glass composite materials by a melt and crystallization process. X-ray diffraction, photoluminescence, and Raman spectroscopy indicated a long range ordered crystalline structure. In-situ electron irradiation studies indicated that both CaMoO{sub 4} and BaMoO{sub 4} powellite phases exhibit radiation stability up to 1000 years at anticipated doses with a crystalline to amorphous transition observed after 1 X 10{sup 13} Gy. Aqueous durability determined from product consistency tests (PCT) showed low normalized release rates for Ba, Ca, and Mo (<0.05 g/m{sup 2}).

  3. Review of Multi-Person Exposure Calls to a Regional Poison Control Center

    E-Print Network [OSTI]

    Morgan, Brent W; Skinner, Carl G; Kleiman, Richard J; Geller, Robert J; Chang, Arthur S

    2010-01-01

    Exposure Calls to a Regional Poison Control Center Brent W.Medicine and the Georgia Poison Center, Atlanta, GA †of Pediatrics and the Georgia Poison Center, Atlanta, GA

  4. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  5. Activity and structure of hydrotreating Ni, Mo, and Ni-Mo sulfide catalysts supported on {gamma}-Al{sub 2}O{sub 3}--USY zeolite

    SciTech Connect (OSTI)

    Li, D.; Nishijima, A.; Morris, D.E.; Guthrie, G.D.

    1999-11-15

    The catalytic hydrocracking (HC) of diphenylmethane (DPM) and hydrodesulfurization (HDS) of dibenzothiophene (DBT) over Ni, Mo, and Ni-Mo sulfide catalysts supported on a mixed ultrastable Y (USY) zeolite and gamma-Al{sub 2}O{sub 3} were studied. The catalysts were characterized using NH{sub 3} temperature-programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), UV-Vis-NIR diffuse reflectance spectroscopy (DRS), high-resolution transmission electron microscopy (HRTEM), and chemical composition analysis. Because addition of zeolite to a conventional alumina support improves acidity, Ni, Mo, and Ni-Mo catalysts supported on the combined supports had much higher HC activity. Ni was found to be uniformly distributed throughout the catalysts; however, Mo preferentially entered the structure of {gamma}-Al{sub 2}O{sub 3} or was accommodated as oxide aggregates on {gamma}-Al{sub 2}O{sub 3}, rather than associating with zeolite. Ni and Mo catalysts supported on {gamma}-Al{sub 2}O{sub 3}-USY zeolite were good HDS catalysts and showed a shallow maximum in catalytic activity at a NiO and MoO{sub 3} content of 5 mol%. The higher activity at this content occurred because Ni or Mo species had higher surface concentrations, higher dispersion, and were more easily sulfided. Ni-Mo catalysts supported on {gamma}-Al{sub 2}O{sub 3}-USY zeolite had high HDS activity, which showed a prominent maximum at a NiO/(NiO + MoO{sub 3}) ratio of about 0.4, because at this ratio the surface species of Ni and Mo were well dispersed and more easily sulfided to form a Ni-Mo-S phase responsible for the high HDS activity. The Ni-Mo catalysts supported on gamma-Al{sub 2}O{sub 3}-USY zeolite have slightly higher HDS activity than {gamma}-Al{sub 2}O{sub 3}-USY zeolite have slightly higher HDS activity than {gamma}-Al{sub 2}O{sub 3}-supported Ni-Mo catalysts.

  6. High-performance MoS{sub 2} transistors with low-resistance molybdenum contacts

    SciTech Connect (OSTI)

    Kang, Jiahao; Liu, Wei; Banerjee, Kaustav, E-mail: kaustav@ece.ucsb.edu [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2014-03-03

    In this Letter, molybdenum (Mo) is introduced and evaluated as an alternative contact metal to atomically-thin molybdenum disulphide (MoS{sub 2}), and high-performance field-effect transistors are experimentally demonstrated. In order to understand the physical nature of the interface and highlight the role of the various factors contributing to the Mo-MoS{sub 2} contacts, density functional theory (DFT) simulations are employed, which reveal that Mo can form high quality contact interface with monolayer MoS{sub 2} with zero tunnel barrier and zero Schottky barrier under source/drain contact, as well as an ultra-low Schottky barrier (0.1?eV) at source/drain-channel junction due to strong Fermi level pinning. In agreement with the DFT simulations, high mobility, high ON-current, and low contact resistance are experimentally demonstrated on both monolayer and multilayer MoS{sub 2} transistors using Mo contacts. The results obtained not only reveal the advantages of using Mo as a contact metal for MoS{sub 2} but also highlight the fact that the properties of contacts with 2-dimensional materials cannot be intuitively predicted by solely considering work function values and Schottky theory.

  7. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  8. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  9. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  10. 1Georgia Southern University Fact Book 2007--2008 I am pleased to present the 2007-08 edition of the Georgia Southern University Fact Book. This publication is the definitive

    E-Print Network [OSTI]

    Hutcheon, James M.

    1Georgia Southern University Fact Book 2007--2008 I am pleased to present the 2007-08 edition throughout the country and the world with the launch of our online degree programs. These programs enable- tinues to expand, adding high-tech facilities to our student-centered campus and new degree programs

  11. 1Georgia Southern University Fact Book 2006--2007 I am pleased to present the 2006-07 edition of the Georgia Southern University Fact Book. This publication is the definitive

    E-Print Network [OSTI]

    Hutcheon, James M.

    1Georgia Southern University Fact Book 2006--2007 I am pleased to present the 2006-07 edition, but new degree programs and outreach initiatives benefiting the people and economic development of our distinction to the institution through ongoing research, scholarship and community service. This edition

  12. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  13. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  14. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  15. Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation Exercise

    Broader source: Energy.gov [DOE]

    COVINGTON, Ga. – Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help them prepare for an actual incident.

  16. Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper Science and Technology; Georgia Institute of Technology, Atlanta, GA.

    E-Print Network [OSTI]

    Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper lignocellulosics to biodiesel fuel Feedstocks ABSTRACT This poster examines the potential of utilizing waste paper

  17. c Copywright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering.

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    c° Copywright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School mode or the saturation region when vDS vGS - VTO, where VTO is the threshold or pinch-off voltage parameter which accounts for the change in with drain-source voltage. Because iG ' 0 in the pinch

  18. Georgia Institute of Technology-Minor Degree in Chemistry Page 1 of 2 Date: February 12, 2013 IUCC approval

    E-Print Network [OSTI]

    Sherrill, David

    ) CHEM 4699 Undergraduate Research CHEM 4740 Atmospheric Chemistry (3 credits) CHEM 4775 Polymer Science and Eng. I (3 credits) CHEM 4776 Polymer Science and Engi. II (3 credits) CHEM 4803 Special Topics (withGeorgia Institute of Technology- Minor Degree in Chemistry Page 1 of 2 Date: February 12, 2013 IUCC

  19. Georgia Institute of Technology-Minor Degree in Chemistry Page 1 of 2 Date: January 14, 2014 IUCC approval

    E-Print Network [OSTI]

    Sherrill, David

    credits) CHEM 4775 Polymer Science and Eng. I (3 credits) CHEM 4776 Polymer Science and Engi. II (3Georgia Institute of Technology- Minor Degree in Chemistry Page 1 of 2 Date: January 14, 2014 IUCC of Technology- Minor Degree in Chemistry Page 2 of 2 Date: January 14, 2014 IUCC approval CHEM 3511 Survey

  20. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  1. NNSA NPO M&O Contract Placement Team receives DOE 2015 Secretary...

    National Nuclear Security Administration (NNSA)

    NPO M&O Contract Placement Team receives DOE 2015 Secretary's Achievement Award | National Nuclear Security Administration Facebook Twitter Youtube Flickr RSS People Mission...

  2. Model studies of hydrodesulfurization by Mo. Annual technical progress report, December 1, 1991--November 30, 1992

    SciTech Connect (OSTI)

    Friend, C.M.

    1992-11-01

    Effects of surface modifiers (Co, S) on activity and selectivity of Mo(110) for desulfurization processes were studied. S generally increases the selectivity for desulfurization while decreasing overall reactivity. Co promots C-H activation processes on Mo(110). The Mo(110)-(9x2)-Co surface affects the desulfurization of 2,5- dihydrothiophene and methanethiol. Vibrational spectroscopy is being used for determining molecular orientation; vibrational frequencies were calculated for four labeled 2-propoxide isomers on Mo(110) and found to agree with experiment.

  3. Origin of the high work function and high conductivity of MoO3

    E-Print Network [OSTI]

    Guo, Yuzheng; Robertson, John

    2014-12-04

    ) and organic photovoltaics (OPVs) [6-12], and as an anode or hole transfer dopant for graphene and MoS2 devices [10-15]. Given its high work function, band gap and defect induced conductivity, it is important to understand how these properties arise... functional. The partial DOS in Fig 2(b) shows that CBM consists of Mo d orbitals while the VBM consists of O p orbitals. This is because MoO3 is a standard closed shell d0 system. The Mo-O bonds are polar, resulting in a large band gap. We now discuss...

  4. Experimental activities supporting commercial U.S. accelerator production of 99-Mo

    SciTech Connect (OSTI)

    Dale, Gregory E [Los Alamos National Laboratory; Chemerisov, Sergey D [ANL; Vandegrift, George F [ANL

    2010-01-01

    {sup 99m}Tc, the daughter product of {sup 99}Mo, is the most commonly used radioisotope for nuclear medicine in the U.S. Experiments are being performed at Los Alamos National Laboratory and Argonne National Laboratory to demonstrate production of {sup 99}Mo using accelerators. The {sup 100}Mo({gamma},n){sup 99}Mo reaction in an enriched {sup 100}Mo target is currently under investigation. Three scaled low-power production experiments using a 20-MeV electron linac at Argonne have been performed to date. Two of these experiments used natural Mo targets and produced a total of 613 {mu}C of {sup 99}Mo. The third experiment used an enriched {sup 100}Mo target and produced 10.5 mCi of {sup 99}Mo. Following irradiation the targets were dissolved and the low specific activity solution was processed through an ARSII generator from NorthStar Medical Radioisotopes. Yields of {sup 99m}Tc >95% have been observed.

  5. Conceptual design of a new homogeneous reactor for medical radioisotope Mo-99/Tc-99m production

    SciTech Connect (OSTI)

    Liem, Peng Hong [Nippon Advanced Information Service (NAIS Co., Inc.) Scientific Computational Division, 416 Muramatsu, Tokaimura, Ibaraki (Japan); Tran, Hoai Nam [Chalmers University of Technology, Dept. of Applied Physics, Div. of Nuclear Engineering, SE-412 96 Gothenburg (Sweden); Sembiring, Tagor Malem [National Nuclear Energy Agency (BATAN), Center for Reactor Technology and Nuclear Safety, Kawasan Puspiptek, Serpong, Tangerang Selatan, Banten (Indonesia); Arbie, Bakri [PT MOTAB Technology, Kedoya Elok Plaza Blok DA 12, Jl. Panjang, Kebun Jeruk, Jakarta Barat (Indonesia)

    2014-09-30

    To partly solve the global and regional shortages of Mo-99 supply, a conceptual design of a nitrate-fuel-solution based homogeneous reactor dedicated for Mo-99/Tc-99m medical radioisotope production is proposed. The modified LEU Cintichem process for Mo-99 extraction which has been licensed and demonstrated commercially for decades by BATAN is taken into account as a key design consideration. The design characteristics and main parameters are identified and the advantageous aspects are shown by comparing with the BATAN's existing Mo-99 supply chain which uses a heterogeneous reactor (RSG GAS multipurpose reactor)

  6. Management and Operating (M&O) Contracts | U.S. DOE Office of...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Management and Operating (M&O) Contracts Integrated Support Center (ISC) ISC Home About Services Freedom of Information Act (FOIA) Privacy Act NEPA Documents Contact Information...

  7. Synthesis of molybdenum disulfide (MoS{sub 2}) for lithium ion battery applications

    SciTech Connect (OSTI)

    Feng Chuanqi; Ma Jun; Li Hua; Zeng Rong; Guo Zaiping; Liu Huakun

    2009-09-15

    This paper reports the use of a rheological phase reaction method for preparing MoS{sub 2} nanoflakes. The characterization by powder X-ray diffraction indicated that MoS{sub 2} had been formed. High resolution electron microscopy observation revealed that the as-prepared MoS{sub 2} nanoflakes had started to curve and partly form MoS{sub 2} nanotubes. The lithium intercalation/de-intercalation behavior of as-prepared MoS{sub 2} nanoflake electrode was also investigated. It was found that the MoS{sub 2} nanoflake electrode exhibited higher specific capacity, with very high cycling stability, compared to MoS{sub 2} nanoparticle electrode. The possible reasons for the high electrochemical performance of the nanoflakes electrodes are also discussed. The outstanding electrochemical properties of MoS{sub 2} nanoflakes obtained by this method make it possible for MoS{sub 2} to be used as a promising anode material.

  8. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  9. Greenfield Alternative Study LEU-Mo Fuel Fabrication Facility

    SciTech Connect (OSTI)

    Washington Division of URS

    2008-07-01

    This report provides the initial “first look” of the design of the Greenfield Alternative of the Fuel Fabrication Capability (FFC); a facility to be built at a Greenfield DOE National Laboratory site. The FFC is designed to fabricate LEU-Mo monolithic fuel for the 5 US High Performance Research Reactors (HPRRs). This report provides a pre-conceptual design of the site, facility, process and equipment systems of the FFC; along with a preliminary hazards evaluation, risk assessment as well as the ROM cost and schedule estimate.

  10. DOE - Office of Legacy Management -- Petrolite Corp - MO 08

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont,Manufacturing -NevadaCentralPetrolite Corp - MO 08

  11. DOE - Office of Legacy Management -- St Louis Airport - MO 01

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co - OH 51SavannahMillKSAirport - MO 01

  12. DOE - Office of Legacy Management -- Washington University - MO 07

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co -VA 03Washington University - MO 07

  13. DOE - Office of Legacy Management -- West Lake Landfill - MO 05

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co -VA 03WashingtonLake Landfill - MO

  14. Co-Mo Electric Coop Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company) JumpIowa: Energy Resources JumpCloverly,Hill,Mo Electric Coop

  15. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  16. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  17. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  18. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  19. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  20. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  1. Effects of the Georgia flood of `94 on Lake Blackshear Dam

    SciTech Connect (OSTI)

    Findlay, R.C.; Northrop, J.H. [Northrop, Devine & Tarbell, Inc., Portland, ME (United States); Crisp, R.L. Jr. [and others

    1995-12-31

    Tropical Storm Alberto produced record rainfall in central Georgia in early July, 1994. The area drains into Lake Blackshear, formed in the Flint River by Lake Blackshear Dam. The level of the lake rose 3.5 m (11.5 ft) above normal and caused the worst flooding of the area in recorded history. The north embankment of the dam was overtopped, causing a 215 m (700 ft) breach. Prior to the breach, a few concentrated boils were observed in the tailwater downstream of the non-breached portion of the dam. This portion remained intact through the flood, but the presence of the boils raised questions regarding its integrity. The effects of the flood on the north embankment are discussed, as well as the geotechnical investigation conducted to assess subsurface conditions at the breach and intact portions and the plan for remediation.

  2. Investigation of Interdiffusion Behavior in the Mo-Zr Binary System via Diffusion Couple Studies

    SciTech Connect (OSTI)

    A. Paz y Puente; J. Dickson; D.D. Keiser, Jr.; Y.H. Sohn

    2014-03-01

    Zirconium has recently garnered attention for use as a diffusion barrier between U–Mo metallic nuclear fuels and Al alloy cladding. In order to gain a fundamental understanding of the diffusional interactions, the interdiffusion behavior in the binary Mo–Zr system was investigated via solid-to-solid diffusion couples annealed in the temperature range of 750 to 1050 degrees C. A combination of scanning electron microscopy, X-ray energy dispersive spectroscopy, and electron probe microanalysis were used to examine the microstructure and concentration profiles across the interdiffusion zone. A large __-Zr (cI2) solid solution layer and a thin (approximately 1–2 um) layer of Mo2Zr (cF24) developed in all couples. Parabolic growth constants and concentration dependent interdiffusion coefficients were calculated for the Mo2Zr and Zr solid solution phases, respectively. The pre-exponential factor and activation energy for growth of the Mo2Zr phase were determined to be approximately 6.5 × 10- 15 m2/s and 90 kJ/mol, respectively. The interdiffusion coefficient in ___-Zr solid solution decreased with an increase in Mo concentration. Both the pre-exponential factors (2 × 10- 8 m2/s at 2 at.% Mo to near 5 × 10- 8 m2/s at 9 at.% Mo) and activation energies (140 kJ/mol at 2 at.% Mo to approximately 155 kJ/mol at 9 at.% Mo) of interdiffusion coefficients were determined to increase with an increase in Mo concentration.

  3. Characterization of U-Mo Foils for AFIP-7

    SciTech Connect (OSTI)

    Edwards, Danny J.; Ermi, Ruby M.; Schemer-Kohrn, Alan L.; Overman, Nicole R.; Henager, Charles H.; Burkes, Douglas; Senor, David J.

    2012-11-07

    Twelve AFIP in-process foil samples, fabricated by either Y-12 or LANL, were shipped from LANL to PNNL for potential characterization using optical and scanning electron microscopy techniques. Of these twelve, nine different conditions were examined to one degree or another using both techniques. For this report a complete description of the results are provided for one archive foil from each source of material, and one unirradiated piece of a foil of each source that was irradiated in the Advanced Test Reactor. Additional data from two other LANL conditions are summarized in very brief form in an appendix. The characterization revealed that all four characterized conditions contained a cold worked microstructure to different degrees. The Y-12 foils exhibited a higher degree of cold working compared to the LANL foils, as evidenced by the highly elongated and obscure U-Mo grain structure present in each foil. The longitudinal orientations for both of the Y-12 foils possesses a highly laminar appearance with such a distorted grain structure that it was very difficult to even offer a range of grain sizes. The U-Mo grain structure of the LANL foils, by comparison, consisted of a more easily discernible grain structure with a mix of equiaxed and elongated grains. Both materials have an inhomogenous grain structure in that all of the characterized foils possess abnormally coarse grains.

  4. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  5. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  6. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  7. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  8. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  9. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  10. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  11. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  12. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  13. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  14. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  15. Bis(?[subscript 2]-?[superscript 2]:?[superscript 2]-2,4,6-trimethylbenzonitrile)bis[(N-isopropyl-3,5-dimethylanilido)molybdenum(III)](Mo-Mo)

    E-Print Network [OSTI]

    Moroz, Yurii S.

    The title compound, [Mo[subscript 2](C[subscript 11]H[subscript 16]N)[subscript 4](C[subscript 10]H[subscript 11]N)[subscript 2

  16. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  17. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  18. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  19. Nucleosynthesis simulations for the production of the p-nuclei $^{\\text{92}}$Mo and $^{\\text{94}}$Mo in a Supernova type II model

    E-Print Network [OSTI]

    Göbel, Kathrin; Koloczek, Alexander; Pignatari, Marco; Reifarth, René; Schach, René; Sonnabend, Kerstin

    2015-01-01

    We present a nucleosynthesis sensitivity study for the $\\gamma$-process in a Supernova type II model within the NuGrid research platform. The simulations aimed at identifying the relevant local production and destruction rates for the p-nuclei of molybdenum and at determining the sensitivity of the final abundances to these rates. We show that local destruction rates strongly determine the abundance of $^{92}$Mo and $^{94}$Mo, and quantify the impact.

  20. Stability of Graphene doping with MoO_3 and I_2

    E-Print Network [OSTI]

    D’Arsié, Lorenzo; Esconjauregui, Santiago; Weatherup, Robert; Guo, Yuzheng; Bhardwaj, Sunil; Centeno, Alba; Zurutuza, Amaia; Cepek, Cinzia; Robertson, John

    2014-09-08

    We dope graphene by evaporation of MoO_3 or by solution-deposition of I_2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that Mo...

  1. Heme-Solvent Coupling: A Mo ssbauer Study of Myoglobin in Sucrose H. Lichtenegger,* W. Doster,#

    E-Print Network [OSTI]

    Lichtenegger, Helga C.

    Heme-Solvent Coupling: A Mo¨ ssbauer Study of Myoglobin in Sucrose H. Lichtenegger,* W. Doster,# T% sucrose/water, a protein-stabilizing solvent, to vibrational and diffusive modes of the heme iron of CO the iron is fully exposed in the same solvent. The temperature dependence of the Mo¨ ssbauer parameters

  2. AutoMoDe Notations, Methods, and Tools for Model-Based Development of Automotive Software

    E-Print Network [OSTI]

    Braun, Peter

    05AE-268 AutoMoDe ­ Notations, Methods, and Tools for Model-Based Development of Automotive describes the first results from the AutoMoDe project (Automotive Model-based Development), where an integrated methodology for model-based development of automotive control software is being developed

  3. New Generation of MoSx Based Solid Lubricant Coatings: Recent Developments and Applications

    SciTech Connect (OSTI)

    Haider, Julfikar; Hashmi, M. S. J.

    2011-01-17

    In recent times, there is a growing interest in applying Molybdenum disulphide (MoS{sub x}) solid lubricant coatings on components to improve the tribological performance (i.e. lower friction coefficient and wear rate). The tribological performance of MoS{sub x} coating is strongly dependent on coating properties and tribological environment. MoS{sub x} coatings are highly successful in certain applications such as in space/vacuum technology, but its effectiveness is questioned in other terrestrial applications such as in cutting tool industry due to its lower hardness and poor oxidation resistance leading to shorter life. In order to circumvent this drawback, the paper identifies that current research is being concentrated on developing MoS{sub x} based coatings using three different approaches: (1) Metal or compound addition in MoS{sub x} coating (2)MoS{sub x} layer on hard coating and (3)MoS{sub x} addition in hard coating matrix. Although the primary objective is same in all three cases, the third approach is considered to be more effective in improving the tribological properties of the coating. Finally, the potential applications of MoS{sub x} based coatings in different industrial sectors have been briefly outlined.

  4. Phase Transformations and Microstructural Evolution of Mo-Bearing Stainless Steels

    E-Print Network [OSTI]

    DuPont, John N.

    Phase Transformations and Microstructural Evolution of Mo-Bearing Stainless Steels T.D. ANDERSON, J Transformations and Microstructural Evolution of Mo-Bearing Stainless Steels T.D. ANDERSON, J.N. DUPONT, M.J. PERRICONE, and A.R. MARDER The good corrosion resistance of superaustenitic stainless steel (SASS) alloys

  5. Adsorption studies of Mo and V onto ferrihydrite *, L. G. BENNING

    E-Print Network [OSTI]

    Benning, Liane G.

    2 National Oceanography Centre, Southampton SO14 3ZH, UK ABSTRACT In this paper, the kinetics of Mo the availability of different ions in terrestrial environ- ments (Goldberg et al., 2002; Metz and Trefry 1988 for FHY surface sites. In addition, kinetic information about Mo and V adsorption as a function of pH were

  6. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  7. Electrical properties of a-C:Mo films produced by dual-cathode filtered cathodic arc plasma deposition

    E-Print Network [OSTI]

    Sansongsiri, Sakon

    2008-01-01

    and Related Materials Electrical properties of a-C:Mo filmsNo. DE-AC02-05CH11231. Electrical properties of a-C:Mo filmsair. Film resistivity and electrical activation energy were

  8. Photo-oxidation method using MoS2 nanocluster materials

    DOE Patents [OSTI]

    Wilcoxon, Jess P. (Albuquerque, NM)

    2001-01-01

    A method of photo-oxidizing a hydrocarbon compound is provided by dispersing MoS.sub.2 nanoclusters in a solvent containing a hydrocarbon compound contaminant to form a stable solution mixture and irradiating the mixture to photo-oxide the hydrocarbon compound. Hydrocarbon compounds of interest include aromatic hydrocarbon and chlorinated hydrocarbons. MoS.sub.2 nanoclusters with an average diameter less than approximately 10 nanometers are shown to be effective in decomposing potentially toxic aromatic and chlorinated hydrocarbons, such as phenol, pentachlorophenol, chlorinated biphenols, and chloroform, into relatively non-toxic compounds. The irradiation can occur by exposing the MoS.sub.2 nanoclusters and hydrocarbon compound mixture with visible light. The MoS.sub.2 nanoclusters can be introduced to the toxic hydrocarbons as either a MoS.sub.2 solution or deposited on a support material.

  9. Use of micromechanical exfoliation of bulk graphite and MoS2 to establish a graphene/MoS2 junction Rebecca Cioffi1, Geoff Musick2, Yunhao Cao3, Tu Hong3, Yaqiong Xu3

    E-Print Network [OSTI]

    . This will form a Schottky barrier between the graphene, a semimetal and MoS2, a p-type doped semiconductor processing and the semiconductor industry [1]. Two such promising 2-D materials are graphene and molybdenumUse of micromechanical exfoliation of bulk graphite and MoS2 to establish a graphene/MoS2 junction

  10. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  11. Synthesis and characterization of model MgO supported catalyst with Pt-Mo interactions.

    SciTech Connect (OSTI)

    Alexeev, O.; Kawi, S.; Gates, B.C. [Univ. of California, Davis, CA (United States)] [Univ. of California, Davis, CA (United States); Shelef, M. [Ford Motor Co., Dearborn, MI (United States)] [Ford Motor Co., Dearborn, MI (United States)

    1996-01-04

    MgO supported platinum and platinum-molybdenum catalysts were prepared from organometallic precursors and charaterized structurally to determine how the nature of the bimetallic precursors and the treatment conditions affected the interaction between the two metals. Samples were prepared from [PtCl{sub 2}(PhCN){sub 2}], [PtCl{sub 2}(PhCN){sub 2}] + [Mo(CO){sub 6}], and [C@Pt[Mo(CO){sub 3}(C{sub 5}H{sub 5})]{sub 2}(PhCN){sub 2}] BC@ characterized by infrared and extended X-ray absorption fine structure (EXAFS) spectroscopies, tranmission electron microscopy, and chemisorption of H{sub 2}, CO, and O{sub 2}. The samples were treated in H{sub 2} at 400{degree}C prior to most of the characterizatons. Incorporation of Mo reduced the chemisorption of CO and of H{sub 2}. EXAFS spectra measured at the Pt L{sub III} edge and at the Mo K edge showed substantial Pt-Mo contributions with a Pt-Mo cordination number of about 2 and an average distance of 2.63 A for the sample prepared from [C@Pt[Mo(CO){sub 3}(C{sub 5}H{sub 5})]{sub 2}(PhCN){sub 2}] BC@. In constract, no significant Pt-Mo contribution was observed for the sample prepared from [PtCl{sub 2}(PhCN){sub 2}]+ [Mo(CO){sub 6}]. Electron micrographs and EXAFS results show that interaction between Pt and Mo ions in the former sample helped to maintain the platinum in a highly dispersed form, with supported platinum clusters being smaller than about 10 A. 53 refs., 9 figs., 9 tabs.

  12. Application of Single Wall Carbon Nanotubes as Transparent Electrodes in Cu(In,Ga)Se2-Based Solar Cells: Preprint

    SciTech Connect (OSTI)

    Contreras, M.; Barnes, T.; van de Lagemaat, J.; Rumbles, G.; Coutts, T. J.; Weeks, C.; Glatkowski, P.; Levitsky, I.; Peltola, J.

    2006-05-01

    We present a new thin-film solar cell structure in which the traditional transparent conductive oxide electrode (ZnO) is replaced by a transparent conductive coating consisting of a network of bundled single-wall carbon nanotubes. Optical transmission properties of these coatings are presented in relation to their electrical properties (sheet resistance), along with preliminary solar cell results from devices made using CuIn1-xGaxSe2 thin-film absorber materials. Achieving an energy conversion efficiency of >12% and a quantum efficiency of {approx}80% demonstrate the feasibility of the concept. A discussion of the device structures will be presented considering the physical properties of the new electrodes comparing current-voltage results from the new solar cell structure and those from standard ZnO/CdS/Cu(In,Ga)Se2/Mo solar cells.

  13. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  14. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  15. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  16. Microstructure of cosputter-deposited metal-and oxide-MoS2 solid lubricant thin films

    E-Print Network [OSTI]

    Marks, Laurence D.

    Microstructure of cosputter-deposited metal- and oxide-MoS2 solid lubricant thin films M. R of cosputtering small amounts of Ni (3%, 9%) and SbOx (20%) on the final microstructure of MoS2 lubricant thin performance is discussed. I. INTRODUCTION Sputter-deposited films of MoS2 have been used as solid lubricants

  17. Catalytic pyrolysis of methane on Mo/H-ZSM5 with continuous hydrogen removal by permeation through dense oxide lms

    E-Print Network [OSTI]

    Iglesia, Enrique

    Catalytic pyrolysis of methane on Mo/H-ZSM5 with continuous hydrogen removal by permeation through ®lms, chain-limiting catalytic pyrolysis reactions on Mo/H-ZSM5, and CO2 co-reactants led to stable simulations in tubular reactors with permeable walls. KEY WORDS: methane pyrolysis; membrane reactors; Mo

  18. Water and Methanol Adsorption on MgO(100)/Mo(100) Studied by Electron Spectroscopies and Thermal Programmed Desorption

    E-Print Network [OSTI]

    Goodman, Wayne

    Water and Methanol Adsorption on MgO(100)/Mo(100) Studied by Electron Spectroscopies and Thermal, 2000 The adsorption of methanol (CH3OH) and water (D2O) on the MgO(100)/Mo(100) surface at 100 K has covered MgO(100)/Mo(100) surface. On the other hand, the formation of a methanol multilayer desorption

  19. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  20. Georgia-Pacific Palatka Plant Uses Thermal Pinch Analysis and Evaluates Water Reduction in Plant-Wide Energy Assessment

    SciTech Connect (OSTI)

    2002-12-01

    This OIT BestPractices Case Study describes the methods and results used in a plant-wide assessment at a Georgia-Pacific paper mill in Palatka, FL. Assessment personnel recommended several projects, which, if implemented, have the potential to save the plant more than 729,000 MMBtu per year and $2.9 million per year. In addition, the plant could reduce water use by 2,100 gallons per minute.

  1. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  2. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  3. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  4. Rapid microwave hydrothermal synthesis of ZnGa{sub 2}O{sub 4} with high photocatalytic activity toward aromatic compounds in air and dyes in liquid water

    SciTech Connect (OSTI)

    Sun Meng; Li Danzhen; Zhang Wenjuan; Chen Zhixin; Huang Hanjie; Li Wenjuan; He Yunhui; Fu Xianzhi

    2012-06-15

    ZnGa{sub 2}O{sub 4} was synthesized from Ga(NO{sub 3}){sub 3} and ZnCl{sub 2} via a rapid and facile microwave-assisted hydrothermal method. The photocatalytic properties of the as-prepared ZnGa{sub 2}O{sub 4} were evaluated by the degradation of pollutants in air and aqueous solution under ultraviolet (UV) light illumination. The results demonstrated that ZnGa{sub 2}O{sub 4} had exhibited efficient photocatalytic activities higher than that of commercial P25 (Degussa Co.) in the degradation of benzene, toluene, and ethylbenzene, respectively. In the liquid phase degradation of dyes (methyl orange, Rhodamine B, and methylene blue), ZnGa{sub 2}O{sub 4} has also exhibited remarkable activities higher than that of P25. After 32 min of UV light irradiation, the decomposition ratio of methyl orange (10 ppm, 150 mL) over ZnGa{sub 2}O{sub 4} (0.06 g) was up to 99%. The TOC tests revealed that the mineralization ratio of MO (10 ppm, 150 mL) was 88.1% after 90 min of reaction. A possible mechanism of the photocatalysis over ZnGa{sub 2}O{sub 4} was also proposed. - Graphical abstract: In the degradation of RhB under UV light irradiation, ZnGa{sub 2}O{sub 4} had exhibited efficient photo-activity, and after only 24 min of irradiation the decomposition ratio was up to 99.8%. Highlights: Black-Right-Pointing-Pointer A rapid and facile M-H method to synthesize ZnGa{sub 2}O{sub 4} photocatalyst. Black-Right-Pointing-Pointer The photocatalyst exhibits high activity toward benzene and dyes. Black-Right-Pointing-Pointer The catalyst possesses more surface hydroxyl sites than TiO{sub 2} (P25). Black-Right-Pointing-Pointer Deep oxidation of different aromatic compounds and dyes over catalyst.

  5. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  6. Inkjet-printed RF Energy Harvesting and Wireless Power Trasmission Devices on Paper Substrate

    E-Print Network [OSTI]

    Tentzeris, Manos

    of Electrical and Computer Engineeing, Georgia Institute of Technology, GA, USA Centre Tecnologic de

  7. Upscaling fluxes from tower to landscape: Overlaying flux footprints on high-resolution (IKONOS) images of vegetation cover

    E-Print Network [OSTI]

    Guo, Qinghua

    Laboratory for Environmental Physics, University of Georgia, Griffin, GA 30223-1797, USA d Department

  8. Redefinition and Global Estimation of Basal Ecosystem1 Respiration Rate2

    E-Print Network [OSTI]

    Leclerc, Monique Y.

    Sciences,52 University of Georgia, Griffin, GA 30223, USA53 26 Geobiosphere Science Centre, Physical

  9. Estimating nocturnal ecosystem respiration from the vertical turbulent flux and change in storage of CO2

    E-Print Network [OSTI]

    Chen, Jiquan

    of Georgia, Lab Environmental Physics, Griffin, GA, USA w Department of Physics, University of Helsinki

  10. Biogeosciences, 7, 36253636, 2010 www.biogeosciences.net/7/3625/2010/

    E-Print Network [OSTI]

    Leclerc, Monique Y.

    Laboratory for Environmental Physics, The University of Georgia, 1109 Experiment Street, Griffin, GA 30223

  11. Surface Structures of Cubo-octahedral Pt-Mo Catalyst Nanoparticles from Monte Carlo Simulations

    SciTech Connect (OSTI)

    Wang, Guofeng; Van Hove, M.A.; Ross, P.N.; Baskes, M.I.

    2005-03-31

    The surface structures of cubo-octahedral Pt-Mo nanoparticles have been investigated using the Monte Carlo method and modified embedded atom method potentials that we developed for Pt-Mo alloys. The cubo-octahedral Pt-Mo nanoparticles are constructed with disordered fcc configurations, with sizes from 2.5 to 5.0 nm, and with Pt concentrations from 60 to 90 at. percent. The equilibrium Pt-Mo nanoparticle configurations were generated through Monte Carlo simulations allowing both atomic displacements and element exchanges at 600 K. We predict that the Pt atoms weakly segregate to the surfaces of such nanoparticles. The Pt concentrations in the surface are calculated to be 5 to 14 at. percent higher than the Pt concentrations of the nanoparticles. Moreover, the Pt atoms preferentially segregate to the facet sites of the surface, while the Pt and Mo atoms tend to alternate along the edges and vertices of these nanoparticles. We found that decreasing the size or increasing the Pt concentration leads to higher Pt concentrations but fewer Pt-Mo pairs in the Pt-Mo nanoparticle surfaces.

  12. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  13. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  14. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  15. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  16. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  17. $?$-Decay Half-Life of the $rp$-Process Waiting Point Nuclide $^{84}$Mo

    E-Print Network [OSTI]

    J. B. Stoker; P. F. Mantica; D. Bazin; A. Becerril; J. S. Berryman; H. L. Crawford; A. Estrade; C. J. Guess; G. W. Hitt; G. Lorusso; M. Matos; K. Minamisono; F. Montes; J. Pereira; G. Perdikakis; H. Schatz; K. Smith; R. G. T. Zegers

    2009-01-08

    A half-life of 2.2 $\\pm$ 0.2 s has been deduced for the ground-state $\\beta$ decay of $^{84}$Mo, more than 1$\\sigma$ shorter than the previously adopted value. $^{84}$Mo is an even-even N = Z nucleus lying on the proton dripline, created during explosive hydrogen burning in Type I X-ray bursts in the rapid proton capture ($rp$) process. The effect of the measured half-life on $rp$-process reaction flow is explored. Implications on theoretical treatments of nuclear deformation in $^{84}$Mo are also discussed.

  18. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  19. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  20. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  1. Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

    The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

  2. Growth of nanocrystalline MoO{sub 3} on Au(111) studied by in situ scanning tunneling microscopy

    SciTech Connect (OSTI)

    Biener, Monika M.; Biener, Juergen; Schalek, Richard; Friend, Cynthia M. [Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138 (United States); Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Center for Imaging and Mesoscale Structures, Harvard University, Cambridge, Massachusetts 02138 (United States); Center for Imaging and Mesoscale Structures, Harvard University, Cambridge, Massachusetts 02138 (United States); Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138 (United States); Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)

    2004-12-15

    The growth of nanocrystalline MoO{sub 3} islands on Au(111) using physical vapor deposition of Mo has been studied by scanning tunneling microscopy and low energy electron diffraction. The growth conditions affect the shape and distribution of the MoO{sub 3} nanostructures, providing a means of preparing materials with different percentages of edge sites that may have different chemical and physical properties than atoms in the interior of the nanostructures. MoO{sub 3} islands were prepared by physical vapor deposition of Mo and subsequent oxidation by NO{sub 2} exposure at temperatures between 450 K and 600 K. They exhibit a crystalline structure with a c(4x2) periodicity relative to unreconstructed Au(111). While the atomic-scale structure is identical to that of MoO{sub 3} islands prepared by chemical vapor deposition, we demonstrate that the distribution of MoO{sub 3} islands on the Au(111) surface reflects the distribution of Mo clusters prior to oxidation although the growth of MoO{sub 3} involves long-range mass transport via volatile MoO{sub 3} precursor species. The island morphology is kinetically controlled at 450 K, whereas an equilibrium shape is approached at higher preparation temperatures or after prolonged annealing at the elevated temperature. Mo deposition at or above 525 K leads to the formation of a Mo-Au surface alloy as indicated by the observation of embedded MoO{sub 3} islands after oxidation by NO{sub 2}. Au vacancy islands, formed when Mo and Au dealloy to produce vacancies, are observed for these growth conditions.

  3. Aboveground test of an advanced Li$_2$MoO$_4$ scintillating bolometer to search for neutrinoless double beta decay of $^{100}$Mo

    E-Print Network [OSTI]

    Bekker, T B; Danevich, F A; Degoda, V Ya; Giuliani, A; Grigorieva, V D; Ivannikova, N V; Mancuso, M; de Marcillac, P; Moroz, I M; Nones, C; Olivieri, E; Pessina, G; Poda, D V; Shlegel, V N; Tretyak, V I; Velazquez, M

    2014-01-01

    Large lithium molybdate (Li$_2$MoO$_4$) crystal boules were produced by using the low thermal gradient Czochralski growth technique from deeply purified molybdenum. A small sample from one of the boules was preliminary characterized in terms of X-ray-induced and thermally-excited luminescence. A large cylindrical crystalline element (with a size of $\\oslash 40\\times40$ mm) was used to fabricate a scintillating bolometer, which was operated aboveground at $\\sim 15$ mK by using a pulse-tube cryostat housing a high-power dilution refrigerator. The excellent detector performance in terms of energy resolution and $\\alpha$ background suppression along with preliminary positive indications on the radiopurity of this material show the potentiality of Li$_2$MoO$_4$ scintillating bolometers for low-counting experiment to search for neutrinoless double beta decay of $^{100}$Mo.

  4. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  5. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  6. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  7. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  8. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  9. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  10. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  11. Microscopic origin of low frequency noise in MoS{sub 2} field-effect transistors

    SciTech Connect (OSTI)

    Ghatak, Subhamoy; Jain, Manish; Ghosh, Arindam; Mukherjee, Sumanta; Sarma, D. D.

    2014-09-01

    We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS{sub 2}) field-effect transistors in multiple device configurations including MoS{sub 2} on silicon dioxide as well as MoS{sub 2}-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO{sub 2} interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS{sub 2} contacts also play a significant role in determining noise magnitude in these devices.

  12. Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS[subscript 2

    E-Print Network [OSTI]

    Baugher, Britton W. H.

    We report electronic transport measurements of devices based on monolayers and bilayers of the transition-metal dichalcogenide MoS[subscript 2]. Through a combination of in situ vacuum annealing and electrostatic gating ...

  13. Monolayers of MoS{sub 2} as an oxidation protective nanocoating material

    SciTech Connect (OSTI)

    Sen, H. Sener; Sahin, H.; Peeters, F. M.; Durgun, E.

    2014-08-28

    First-principle calculations are employed to investigate the interaction of oxygen with ideal and defective MoS{sub 2} monolayers. Our calculations show that while oxygen atoms are strongly bound on top of sulfur atoms, the oxygen molecule only weakly interacts with the surface. The penetration of oxygen atoms and molecules through a defect-free MoS{sub 2} monolayer is prevented by a very high diffusion barrier indicating that MoS{sub 2} can serve as a protective layer for oxidation. The analysis is extended to WS{sub 2} and similar coating characteristics are obtained. Our calculations indicate that ideal and continuous MoS{sub 2} and WS{sub 2} monolayers can improve the oxidation and corrosion-resistance of the covered surface and can be considered as an efficient nanocoating material.

  14. Combining Formal Methods and Safety Analysis -The ForMoSA Approach

    E-Print Network [OSTI]

    Reif, Wolfgang

    and quantitative analysis. The For- MoSA approach combines these techniques to answer these safety rele- vant level of con- fidence formal methods from software engineering have been used. Safety rele- vant

  15. MO"BIUS ENERGIES FOR KNOTS AND LINKS, SURFACES AND SUBMANIFOLDS

    E-Print Network [OSTI]

    Kusner, Robert B.

    MO"BIUS ENERGIES FOR KNOTS AND LINKS, SURFACES AND SUBMANIFOLDS energies, especially those which are invariant under M"obius transforma- tions of space. We describe computer experiments with such energies, and discuss ways of extending these to energies

  16. AB INITIO Modeling of Thermomechanical Properties of Mo-Based Alloys for Fossil Energy Conversion

    SciTech Connect (OSTI)

    Ching, Wai-Yim

    2013-12-31

    In this final scientific/technical report covering the period of 3.5 years started on July 1, 2011, we report the accomplishments on the study of thermo-mechanical properties of Mo-based intermetallic compounds under NETL support. These include computational method development, physical properties investigation of Mo-based compounds and alloys. The main focus is on the mechanical and thermo mechanical properties at high temperature since these are the most crucial properties for their potential applications. In particular, recent development of applying ab initio molecular dynamic (AIMD) simulations to the T1 (Mo{sub 5}Si{sub 3}) and T2 (Mo{sub 5}SiB{sub 2}) phases are highlighted for alloy design in further improving their properties.

  17. Substrate interactions with suspended and supported monolayer MoS?: Angle-resolved photoemission spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jin, Wencan; Sadowski, Jerzy T.; Yeh, Po-Chun; Zaki, Nader; Zhang, Datong; Liou, Jonathan T.; Dadap, Jerry I.; Herman, Irving P.; Osgood, Jr., Richard M.; Sutter, Peter; et al

    2015-03-17

    We report the directly measured electronic structure of exfoliated monolayer molybdenum disulfide (MoS?) using micrometer-scale angle-resolved photoemission spectroscopy. Measurements of both suspended and supported monolayer MoS? elucidate the effects of interaction with a substrate. A suggested relaxation of the in-plane lattice constant is found for both suspended and supported monolayer MoS? crystals. For suspended MoS?, a careful investigation of the measured uppermost valence band gives an effective mass at ? and ? of 2.00m? and 0.43m?, respectively. We also measure an increase in the band linewidth from the midpoint of ?? to the vicinity of ? and briefly discuss itsmore »possible origin.« less

  18. Substrate interactions with suspended and supported monolayer MoS2: Angle-resolved photoemission spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jin, Wencan; Yeh, Po -Chun; Zaki, Nader; Zhang, Datong; Liou, Jonathan T.; Dadap, Jerry I.; Barinov, Alexey; Yablonskikh, Mikhail; Sadowski, Jerzy T.; Sutter, Peter; et al

    2015-03-17

    We report the directly measured electronic structure of exfoliated monolayer molybdenum disulfide (MoS?) using micrometer-scale angle-resolved photoemission spectroscopy. Measurements of both suspended and supported monolayer MoS? elucidate the effects of interaction with a substrate. Thus, a suggested relaxation of the in-plane lattice constant is found for both suspended and supported monolayer MoS? crystals. For suspended MoS?, a careful investigation of the measured uppermost valence band gives an effective mass at ?¯ and ?¯ of 2.00m? and 0.43m?, respectively. We also measure an increase in the band linewidth from the midpoint of ?¯?¯ to the vicinity of ?¯ and briefly discussmore »its possible origin.« less

  19. Combining sedimentological, trace metal (Mn, Mo) and molecular evidence for reconstructing past water-column

    E-Print Network [OSTI]

    Gilli, Adrian

    Combining sedimentological, trace metal (Mn, Mo) and molecular evidence for reconstructing past online 22 June 2013 Abstract Here, we present sedimentological, trace metal, and molecular evidence underscores the value of combining sedimentological, geochemical, and microbiological approaches

  20. Investigation of double beta decay of $^{100}$Mo to excited states of $^{100}$Ru

    E-Print Network [OSTI]

    R. Arnold; C. Augier; A. S. Barabash; . ..

    2014-02-28

    Double beta decay of $^{100}$Mo to the excited states of daughter nuclei has been studied using a 600 cm$^3$ low-background HPGe detector and an external source consisting of 2588 g of 97.5% enriched metallic $^{100}$Mo, which was formerly inside the NEMO-3 detector and used for the NEMO-3 measurements of $^{100}$Mo. The half-life for the two-neutrino double beta decay of $^{100}$Mo to the excited 0$^+_1$ state in $^{100}$Ru is measured to be $T_{1/2}=[7.5 \\pm{0.6}(stat) \\pm {0.6}(syst)]\\cdot 10^{20}$ yr. For other $(0\

  1. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  2. High Pressure Transformation of La4Cu3MoO12 to a Layered Perovskite

    E-Print Network [OSTI]

    Poeppelmeier, Kenneth R.

    High Pressure Transformation of La4Cu3MoO12 to a Layered Perovskite Douglas A. Vander Griend it stabilizes the perovskite structure. In this paper, we describe the HP synthesis of a new copper-rich layered perovskite, La4Cu3MoO12, which is isotypic with La2- CuSnO6.1 When synthesized at ambient pressure (AP

  3. MoS{sub 2} nanoribbons as promising thermoelectric materials

    SciTech Connect (OSTI)

    Fan, D. D.; Liu, H. J., E-mail: phlhj@whu.edu.cn; Cheng, L.; Jiang, P. H.; Shi, J. [Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Tang, X. F. [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

    2014-09-29

    The thermoelectric properties of MoS{sub 2} armchair nanoribbons with different width are studied by using first-principles calculations and Boltzmann transport theory, where the relaxation time is predicted from deformation potential theory. Due to the dangling bonds at the armchair edge, there is obvious structure reconstruction of the nanoribbons which plays an important role in governing the electronic and transport properties. The investigated armchair nanoribbons are found to be semiconducting with indirect gaps, which exhibit interesting width-dependent oscillation behavior. The smaller gap of nanoribbon with width N?=?4 (Here, N represents the number of dimer lines or zigzag chains across the ribbon width) leads to a much larger electrical conductivity at 300?K, which outweighs the relatively larger electronic thermal conductivity when compared with those of N?=?5, 6. As a result, the ZT values can be optimized to 3.4 (p-type) and 2.5 (n-type) at room temperature, which significantly exceed the performance of most laboratory results reported in the literature.

  4. Electrochemical Testing of Ni-Cr-Mo-Gd Alloys

    SciTech Connect (OSTI)

    T. E. Lister; R. E. Mizia; H. Tian

    2005-10-01

    The waste package site recommendation design specified a boron-containing stainless steel, Neutronit 976/978, for fabrication of the internal baskets that will be used as a corrosion-resistant neutron-absorbing material. Recent corrosion test results gave higher-than-expected corrosion rates for this material. The material callout for these components has been changed to a Ni-Cr-Mo-Gd alloy (ASTM-B 932-04, UNS N06464) that is being developed at the Idaho National Laboratory. This report discusses the results of initial corrosion testing of this material in simulated in-package environments that could contact the fuel baskets after breach of the waste package outer barrier. The corrosion test matrix was executed using the potentiodynamic and potentiostatic electrochemical test techniques. The alloy performance shows low rates of general corrosion after initial removal of a gadolinium-rich second phase that intersects the surface. The high halide-containing test solutions exhibited greater tendencies toward initiation of crevice corrosion.

  5. Thermo-physical Properties of DU-10 wt.% Mo Alloys

    SciTech Connect (OSTI)

    Douglas E. Burkes; Cynthia A. Papesch; Andrew P. Maddison; Thomas Hartmann; Francine J. Rice

    2010-08-01

    Low-enriched uranium alloyed with 10 wt% molybdenum is under consideration by the Global Threat Reduction Initiative reactor convert program as a very high density fuel to enable the conversion of high-performance research reactors away from highly-enriched uranium fuels. As with any fuel development program, the thermophysical properties of the fuel as a function of temperature are extremely important and must be well characterized in order to effectively model and predict fuel behavior under normal and off-normal irradiation conditions. For the alloy system under investigation, there is a lack of thermophysical property data, and in most cases, the data is relatively inconsistent and lacks sufficient explanation. Available literature on this alloy system comes mainly from studies done during the 1960s and 1970s, and often does not include sufficient information on fabrication history or conditions to draw conclusions for the current application. The current paper has investigated specific heat capacity, coefficient of linear thermal expansion, density, and thermal diffusivity that were then used to calculate alloy thermal conductivity as a function of temperature. The data obtained from this investigation was compared to available literature on similar U-Mo alloys, and in most cases are in good agreement.

  6. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  7. Stability of precipitate phases in Fe-rich Fe-Cr-Ni-Mo alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Ying; Tan, Lizhen; Busby, Jeremy T

    2015-01-01

    Understanding the stability of precipitate phases in the Fe-rich Fe-Cr-Ni-Mo alloys is critical to the alloy design and application of Mo-containing Austenitic steels. Coupled with thermodynamic modeling, stability of the and phases in two Fe-Cr-Ni-Mo alloys were investigated at 1000, 850 and 700 C for different annealing time. The morphologies, compositions and crystal structures of the matrix and precipitate phases were carefully examined by Scanning Electron Microscopy, Electron Probe Microanalysis, X-ray diffraction and Transmission Electron Microscopy. Two key findings resulted from this work. One is that the phase is stable at high temperature and transformed into the phase at lowmore »temperature. The other is that both the and phases have large solubilites of Cr, Mo and Ni, among which the Mo solubility has a major role on the relative stability of the precipitate phases. The developed thermodynamic models were then applied to evaluating the Mo effect on the stability of precipitate phases in AISI 316 and NF709 alloys.« less

  8. Thermal stability of intermetallic phases in Fe-rich Fe-Cr-Ni-Mo alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Ying; Tan, Lizhen; Busby, Jeremy T.

    2015-06-12

    Understanding the stability of precipitate phases in the Fe-rich Fe-Cr-Ni-Mo alloys is critical to the alloy design and application of Mo-containing Austenitic steels. Coupled with thermodynamic modeling, stability of the chi and Laves phases in two Fe-Cr-Ni-Mo alloys were investigated at 1000, 850 and 700 °C for different annealing time. The morphologies, compositions and crystal structures of the matrix and precipitate phases were carefully examined by Scanning Electron Microscopy, Electron Probe Microanalysis, X-ray diffraction and Transmission Electron Microscopy. The two key findings resulted from this work. One is that the chi phase is stable at high temperature and transformed intomore »the Laves phase at low temperature. The other is that both the chi and Laves phases have large solubilites of Cr, Mo and Ni, among which the Mo solubility has a major role on the relative stability of the precipitate phases. The developed thermodynamic models were then applied to evaluating the Mo effect on the stability of precipitate phases in AISI 316 and NF709 alloys.« less

  9. High reflectance and low stress Mo2C/Be multilayers

    DOE Patents [OSTI]

    Bajt, Sasa (Livermore, CA); Barbee, Jr., Troy W. (Palo Alto, CA)

    2001-01-01

    A material for extreme ultraviolet (EUV) multilayers that will reflect at about 11.3 nm, have a high reflectance, low stress, and high thermal and radiation stability. The material consists of alternating layers of Mo.sub.2 C and Be deposited by DC magnetron sputtering on a substrate, such as silicon. In one example a Mo.sub.2 C/Be multilayer gave 65.2% reflectance at 11.25 nm measured at 5 degrees off normal incidence angle, and consisted of 70 bilayers with a deposition period of 5.78 nm, and was deposited at 0.83 mTorr argon (Ar) sputtering pressure, with the first and last layers being Be. The stress of the multilayer is tensile and only +88 MPa, compared to +330 MPa of a Mo/Be multilayers of the same thickness. The Mo.sub.2 C/Be multilayer was capped with carbon which produced an increase in reflectivity of about 7% over a similar multilayer with no carbon capping material, thus raising the reflectivity from 58.3% to over 65%. The multilayers were formed using either Mo.sub.2 C or Be as the first and last layers, and initial testing has shown the formation of beryllium carbide at the interfaces between the layers which both stabilizes and has a smoothing effect, and appear to be smoother than the interfaces in Mo/Be multilayers.

  10. MoS{sub 2} nanotube exfoliation as new synthesis pathway to molybdenum blue

    SciTech Connect (OSTI)

    Visic, B.; Gunde, M. Klanjsek; Kovac, J.; Iskra, I.; Jelenc, J.; Remskar, M.; Centre of Excellence Namaste, Jamova cesta 39, SI-1000 Ljubljana

    2013-02-15

    Graphical abstract: . Display Omitted Highlights: ? New synthesis approach to obtaining molybdenum blue via exfoliated MoS{sub 2} nanotubes. ? Material is prone to self assembly and is stable in high vacuum. ? Molecules are as small as 2 nm and their clusters are up to tens of nanometers. ? Change in absorption and oxidation states from the precursor MoS{sub 2}. -- Abstract: Molybdenum blue-type materials are usually obtained by partially reducing Mo{sup VI+} in acidic solutions, while in the presented method it is formed in ethanol solution of exfoliated MoS{sub 2} nanotubes, where the MoS{sub 2} flakes are the preferential location for their growth. Material was investigated by means of scanning electron and atomic force microscopy, showing the structure and self assembly, while also confirming that it is stable in high vacuum with molecules as small as 1.6 nm and the agglomerates of few tens of nanometres. The ultraviolet–visible and photoelectron spectrometry show the change in absorption properties and oxidation states from MoS{sub 2} structure to molybdenum blue, while the presence of sulphur suggests that this is a new type of molybdenum blue material.

  11. Effects of thermal treatment on the co-rolled U-Mo fuel foils

    SciTech Connect (OSTI)

    Dennis D. Keiser, Jr.; Tammy L. Trowbridge; Cynthia R. Breckenridge; Brady L. Mackowiak; Glenn A. Moore; Barry H. Rabin; Mitchell K. Meyer

    2014-11-01

    A monolithic fuel type is being developed to convert US high performance research and test reactors such as Advanced Test Reactor (ATR) at Idaho National Laboratory from highly enriched uranium (HEU) to low-enriched uranium (LEU). The interaction between the cladding and the U-Mo fuel meat during fuel fabrication and irradiation is known to have negative impacts on fuel performance, such as mechanical integrity and dimensional stability. In order to eliminate/minimize the direct interaction between cladding and fuel meat, a thin zirconium diffusion barrier was introduced between the cladding and U-Mo fuel meat through a co-rolling process. A complex interface between the zirconium and U-Mo was developed during the co-rolling process. A predictable interface between zirconium and U-Mo is critical to achieve good fuel performance since the interfaces can be the weakest link in the monolithic fuel system. A post co-rolling annealing treatment is expected to create a well-controlled interface between zirconium and U-Mo. A systematic study utilizing post co-rolling annealing treatment has been carried out. Based on microscopy results, the impacts of the annealing treatment on the interface between zirconium and U-Mo will be presented and an optima annealing treatment schedule will be suggested. The effects of the annealing treatment on the fuel performance will also be discussed.

  12. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  13. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  14. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  15. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  16. Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 A G E N D A S P E A K E R B I O G R A P H I E S

    E-Print Network [OSTI]

    Das, Suman

    Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 A G E N D A · S P Next Generation Manufacturing of Printed and Flexible Electronics #12;#12;Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 Table of Contents Agenda - Pages 3-4 Speaker

  17. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  18. Mechanistic study of methanol synthesis from CO? and H? on a modified model Mo?S? cluster

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Cheng; Liu, Ping

    2015-01-12

    We report the methanol synthesis from CO? and H? on metal (M = K, Ti, Co, Rh, Ni, and Cu)-modified model Mo?S? catalyst using density functional theory (DFT). The results show that the catalytic behavior of a Mo?S? cluster is changed significantly due to the modifiers, via the electron transfer from M to Mo?S? and therefore the reduction of the Mo cation (ligand effect) and the direct participation of M in the reaction (ensemble effect) to promote some elementary steps. With the most positively charged modifier, the ligand effect in the case of K-Mo?S? is the most obvious among themore »systems studied; however it cannot compete with the ensemble effect, which plays a dominate role in determining activity via the electrostatic attraction in particular to stabilize the CHxOy species adsorbed at the Mo sites of Mo?S?. In comparison, the ligand effect is weaker and the ensemble effect is more important when the other modifiers are used. In addition, the modifiers also vary the optimal reaction pathway for methanol synthesis on Mo?S?, ranging from the reverse water-gas shift (RWGS) + CO hydrogenation as that of Mo?S? to the formate pathway. Finally, K is able to accelerate the methanol synthesis on Mo?S? the most; while the promotion by Rh is relatively small. Using the modifiers like Ti, Co, Ni, and Cu, the activity of Mo?S? is decreased instead. The relative stability between *HCOO and *HOCO is identified as a descriptor to capture the variation in mechanism and scales well with the estimated activity. Our study not only provides better understanding of the reaction mechanism and actives on the modified Mo?S?, but also predicts some possible candidates, which can be used a promoter to facilitate the CH?OH synthesis on Mo sulfides.« less

  19. Mechanistic study of methanol synthesis from CO? and H? on a modified model Mo?S? cluster

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Cheng [Yangzhou Univ., Yangzhou, Jiangsu (China); Liu, Ping [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2015-02-06

    We report the methanol synthesis from CO? and H? on metal (M = K, Ti, Co, Rh, Ni, and Cu)-modified model Mo?S? catalyst using density functional theory (DFT). The results show that the catalytic behavior of a Mo?S? cluster is changed significantly due to the modifiers, via the electron transfer from M to Mo?S? and therefore the reduction of the Mo cation (ligand effect) and the direct participation of M in the reaction (ensemble effect) to promote some elementary steps. With the most positively charged modifier, the ligand effect in the case of K-Mo?S? is the most obvious among the systems studied; however it cannot compete with the ensemble effect, which plays a dominate role in determining activity via the electrostatic attraction in particular to stabilize the CHxOy species adsorbed at the Mo sites of Mo?S?. In comparison, the ligand effect is weaker and the ensemble effect is more important when the other modifiers are used. In addition, the modifiers also vary the optimal reaction pathway for methanol synthesis on Mo?S?, ranging from the reverse water-gas shift (RWGS) + CO hydrogenation as that of Mo?S? to the formate pathway. Finally, K is able to accelerate the methanol synthesis on Mo?S? the most; while the promotion by Rh is relatively small. Using the modifiers like Ti, Co, Ni, and Cu, the activity of Mo?S? is decreased instead. The relative stability between *HCOO and *HOCO is identified as a descriptor to capture the variation in mechanism and scales well with the estimated activity. Our study not only provides better understanding of the reaction mechanism and actives on the modified Mo?S?, but also predicts some possible candidates, which can be used a promoter to facilitate the CH?OH synthesis on Mo sulfides.

  20. Microstructure evolution of Li uptake/removal in MoO{sub 2}@C nanoparticles with high lithium storage performance

    SciTech Connect (OSTI)

    Liu, Yulong; Zhang, Hong; Ouyang, Pan; Chen, Wenhao [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Li, Zhicheng, E-mail: zhchli@mail.csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)

    2014-02-01

    Highlights: • The carbon-coated MoO{sub 2} (MoO{sub 2}@C) ultra fine nanoparticles are synthesized by one-pot hydrothermal method. • MoO{sub 2}@C nanoparticles have high specific capacity, excellent cycling performance and rate performance. • Phase transformations for lithium ion uptake/removal are examined carefully by TEM. • Phase transformations are highly reversible during the redox process. - Abstract: A facile one pot strategy of a hydrothermal methodology was applied to synthesize the carbon coated MoO{sub 2} (MoO{sub 2}@C) nanostructured particles, which are composed of ultra fine nanoparticles with homogeneous carbon coating about several nanometers. As an electrode in lithium ion batteries, the MoO{sub 2}@C shows a high specific capacity and reversible capacity (730 mA h g{sup ?1} after 60 cycles). Microstructure investigations, by using a high resolution transmission electron microscopy, of the MoO{sub 2}@C based electrodes employed at various states during the first discharge/charge cycle were conducted to elucidate the lithium ion uptake/removal mechanism and cycling behavior. In the lithium uptake process, the original MoO{sub 2} phase transfers into Li{sub 0.98}MoO{sub 2} through an addition type reaction, and then nanosized metallic Mo emerges as a result of a conversion reaction. In turn, Mo could be oxidized to the intermediate Li{sub 0.98}MoO{sub 2} before converting to hyperfine MoO{sub 2} phase on upcoming lithium removal process.

  1. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  2. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  3. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  4. Structural Model of the Basement in the Central Savannah River Area, South Carolina and Georgia

    SciTech Connect (OSTI)

    Stephenson, D. [Westinghouse Savannah River Company, AIKEN, SC (United States); Stieve, A.

    1992-03-01

    Interpretation of several generations of seismic reflection data and potential field data suggests the presence of several crustal blocks within the basement beneath the Coastal Plain in the Central Savannah River Area (CSRA). The seismic reflection and refraction data include a grid of profiles that capture shallow and deep reflection events and traverse the Savannah River Site and vicinity. Potential field data includes aeromagnetic, ground magnetic surveys, reconnaissance and detailed gravity surveys. Subsurface data from recovered core are used to constrain the model.Interpretation of these data characteristically indicate a southeast dipping basement surface with some minor highs and lows suggesting an erosional pre-Cretaceous unconformity. This surface is interrupted by several basement faults, most of which offset only early Cretaceous sedimentary horizons overlying the erosional surface. The oldest fault is perhaps late Paleozoic because it is truncated at the basement/Coastal Plain interface. This fault is related in timing and mechanism to the underlying Augusta fault. The youngest faults deform Coastal Plain sediments of at least Priabonian age (40-36.6 Ma). One of these young faults is the Pen Branch faults, identified as the southeast dipping master fault for the Triassic Dunbarton basin. All the Cenozoic faults are probably related in time and mechanism to the nearby, well studied Belair fault.The study area thus contains a set of structures evolved from the Alleghanian orogeny through Mesozoic extension to Cenozoic readjustment of the crust. There is a metamorphosed crystalline terrane with several reflector/fault packages, a reactivated Triassic basin, a mafic terrane separating the Dunbarton basin from the large South Georgia basin to the southeast, and an overprint of reverse faults, some reactivated, and some newly formed.

  5. Economic Benefits, Carbon Dioxide (CO2) Emissions Reduction, and Water Conservation Benefits from 1,000 Megawatts (MW) of New Wind Power in Georgia (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2008-06-01

    The U.S. Department of Energy's Wind Powering America Program is committed to educating state-level policy makers and other stakeholders about the economic, CO2 emissions, and water conservation impacts of wind power. This analysis highlights the expected impacts of 1000 MW of wind power in Georgia. We forecast the cumulative economic benefits from 1000 MW of development in Georgia to be $2.1 billion, annual CO2 reductions are estimated at 3.0 million tons, and annual water savings are 1,628 million gallons.

  6. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  7. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  8. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  9. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  10. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  11. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  12. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  13. Doping against the native propensity of MoS?: Degenerate hole doping by cation substitution

    SciTech Connect (OSTI)

    Suh, Joonki; Park, Tae-Eon; Lin, Der-Yuh; Fu, Deyi; Park, Joonsuk; Jung, Hee Joon; Chen, Yabin; Ko, Changhyun; Jang, Chaun; Sun, Yinghui; Sinclair, Robert; Chang, Joonyeon; Tongay, Sefaattin; Wu, Junqiao

    2014-12-10

    Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, molybdenum disulfide (MoS?) is natively an n-type presumably due to omnipresent electron-donating sulfur vacancies, and stable/controllable p-type doping has not been achieved. The lack of p-type doping hampers the development of charge-splitting p–n junctions of MoS?, as well as limits carrier conduction to spin-degenerate conduction bands instead of the more interesting, spin-polarized valence bands. Traditionally, extrinsic p-type doping in TMDs has been approached with surface adsorption or intercalation of electron-accepting molecules. However, practically stable doping requires substitution of host atoms with dopants where the doping is secured by covalent bonding. In this work, we demonstrate stable p-type conduction in MoS? by substitutional niobium (Nb) doping, leading to a degenerate hole density of ~3 × 10¹? cm?³. Structural and X-ray techniques reveal that the Nb atoms are indeed substitutionally incorporated into MoS? by replacing the Mo cations in the host lattice. van der Waals p–n homojunctions based on vertically stacked MoS? layers are fabricated, which enable gate-tunable current rectification. A wide range of microelectronic, optoelectronic, and spintronic devices can be envisioned from the demonstrated substitutional bipolar doping of MoS?. From the miscibility of dopants with the host, it is also expected that the synthesis technique demonstrated here can be generally extended to other TMDs for doping against their native unipolar propensity.

  14. MCNPX-CINDER'90 Simulation of Photonuclear Mo-99 Production Experiments

    SciTech Connect (OSTI)

    Kelsey, Charles T. IV [Los Alamos National Laboratory; Chemerizov, Sergey D. [Argonne National Laboratory; Dale, Gregory E. [Los Alamos National Laboratory; Harvey, James T. [NorthStar Medical Radioisotopes; Tkac, Peter [Argonne National Laboratory; Vandegrift, George R III [Argonne National Laboratory

    2011-01-01

    The MCNPX and CINDER'90 codes were used to support design of experiments investigating Mo-99 production with a 20-MeV electron beam. Bremsstrahlung photons produced by the electron beam interacting with the target drive the desired Mo-100({gamma},n)Mo-99 reaction, as well as many undesired reactions important to accurate prediction of radiation hazards. MCNPX is a radiation transport code and CINDER'90 is a transmutation code. They are routinely used together for accelerator activation calculations. Low energy neutron fluxes and production rates for nonneutron and high energy neutron induced reactions computed using MCNPX are inputs to CINDER'90. CINDER'90 presently has only a neutron reaction cross section library up to 25 MeV and normally the other reaction rates come from MCNPX physics models. For this work MCNPX photon flux tallies modified by energy response functions prepared from evaluated photonuclear cross section data were used to tally the reaction rates for CINDER'90 input. The cross section evaluations do not provide isomer to ground state yield ratios so a spin based approximation was used. Post irradiation dose rates were calculated using MCNPX with CINDER'90 produced decay photon spectra. The sensitivity of radionuclide activities and dose rates to beam parameters including energy, position, and profile, as well as underlying isomer assumptions, was investigated. Three experimental production targets were irradiated, two natural Mo and one Mo-100 enriched. Natural Mo foils upstream of the targets were used to analyze beam position and profile by exposing Gafchromic film to the foils after each irradiation. Activation and dose rate calculations were rerun after the experiments using measured beam parameters for comparison with measured Mo-99 activities and dose rates.

  15. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  16. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  17. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  18. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  19. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  20. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  1. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  2. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  3. In Situ Time-Resolved Characterization of Ni-MoO2 Catalysts for the Water-Gas Shift Reaction

    SciTech Connect (OSTI)

    Wen,W.; Calderon, J.; Brito, J.; Marinkovic, N.; Hanson, J.; Rodriquez, J.

    2008-01-01

    Active catalysts for the water-gas shift (WGS, CO + H2O ? H2 + CO2) reaction were synthesized from nickel molybdates ({beta}-NiMoO4 and nH2O{center_dot}NiMoO4) as precursors, and their structural transformations were monitored using in situ time-resolved X-ray diffraction and X-ray absorption near-edge spectroscopy. In general, the nickel molybdates were not stable and underwent partial reduction in the presence of CO or CO/H2O mixtures at high temperatures. The interaction of {beta}-NiMoO4 with the WGS reactants at 500 C led to the formation of a mixture of Ni (24 nm particle size) and MoO2 (10 nm particle size). These Ni-MoO2 systems displayed good catalytic activity at 350, 400, and 500 C. At 350 and 400 C, catalytic tests revealed that the Ni-MoO2 system was much more active than isolated Ni (some activity) or isolated MoO2 (negligible activity). Thus, cooperative interactions between the admetal and oxide support were probably responsible for the high WGS activity of Ni-MoO2. In a second synthetic approach, the NiMoO4 hydrate was reduced to a mixture of metallic Ni, NiO, and amorphous molybdenum oxide by direct reaction with H2 gas at 350 C. In the first pass of the water-gas shift reaction, MoO2 appeared gradually at 500 C with a concurrent increase of the catalytic activity. For these catalysts, the particle size of Ni (4 nm) was much smaller than that of the MoO2 (13 nm). These systems were found to be much more active WGS catalysts than Cu-MoO2, which in turn is superior to commercial low-temperature Cu-ZnO catalysts.

  4. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  5. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  6. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  7. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  8. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  9. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  10. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  11. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  12. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  13. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  14. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  15. Method for the production of .sup.99m Tc compositions from .sup.99 Mo-containing materials

    DOE Patents [OSTI]

    Bennett, Ralph G. (Idaho Falls, ID); Christian, Jerry D. (Idaho Falls, ID); Grover, S. Blaine (Idaho Falls, ID); Petti, David A. (Idaho Falls, ID); Terry, William K. (Idaho Falls, ID); Yoon, Woo Y. (Idaho Falls, ID)

    1998-01-01

    An improved method for producing .sup.99m Tc compositions from .sup.99 Mo compounds. .sup.100 Mo metal or .sup.100 MoO.sub.3 is irradiated with photons in a particle (electron) accelerator to ultimately produce .sup.99 MoO.sub.3. This composition is then heated in a reaction chamber to form a pool of molten .sup.99 MoO.sub.3 with an optimum depth of 0.5-5 mm. A gaseous mixture thereafter evolves from the molten .sup.99 MoO.sub.3 which contains vaporized .sup.99 MoO.sub.3, vaporized .sup.99m TcO.sub.3, and vaporized .sup.99m TcO.sub.2. This mixture is then combined with an oxidizing gas (O.sub.2(g)) to generate a gaseous stream containing vaporized .sup.99m Tc.sub.2 O.sub.7 and vaporized .sup.99 MoO.sub.3. Next, the gaseous stream is cooled in a primary condensation stage in the reaction chamber to remove vaporized .sup.99 MoO.sub.3. Cooling is undertaken at a specially-controlled rate to achieve maximum separation efficiency. The gaseous stream is then cooled in a sequential secondary condensation stage to convert vaporized .sup.99m Tc.sub.2 O.sub.7 into a condensed .sup.99m Tc-containing reaction product which is collected.

  16. Method for the production of {sup 99m}Tc compositions from {sup 99}Mo-containing materials

    DOE Patents [OSTI]

    Bennett, R.G.; Christian, J.D.; Grover, S.B.; Petti, D.A.; Terry, W.K.; Yoon, W.Y.

    1998-09-01

    An improved method is described for producing {sup 99m}Tc compositions from {sup 99}Mo compounds. {sup 100}Mo metal or {sup 100}MoO{sub 3} is irradiated with photons in a particle (electron) accelerator to ultimately produce {sup 99}MoO{sub 3}. This composition is then heated in a reaction chamber to form a pool of molten {sup 99}MoO{sub 3} with an optimum depth of 0.5--5 mm. A gaseous mixture thereafter evolves from the molten {sup 99}MoO{sub 3} which contains vaporized {sup 99}MoO{sub 3}, vaporized {sup 99m}TcO{sub 3}, and vaporized {sup 99m}TcO{sub 2}. This mixture is then combined with an oxidizing gas (O{sub 2(g)}) to generate a gaseous stream containing vaporized {sup 99m}Tc{sub 2}O{sub 7} and vaporized {sup 99}MoO{sub 3}. Next, the gaseous stream is cooled in a primary condensation stage in the reaction chamber to remove vaporized {sup 99}MoO{sub 3}. Cooling is undertaken at a specially-controlled rate to achieve maximum separation efficiency. The gaseous stream is then cooled in a sequential secondary condensation stage to convert vaporized {sup 99m}Tc{sub 2}O{sub 7} into a condensed {sup 99m}Tc-containing reaction product which is collected. 1 fig.

  17. The effect of global warming scenarios on soybean and peanut yields in the Coastal Plain region of Georgia

    SciTech Connect (OSTI)

    Laitta, M.T.; Huebner, N.J. [Georgia State Univ., Atlanta, GA (United States)

    1996-09-01

    This study is an evaluation of peanut and soybean yield in the Coastal Plain of Georgia as a function of seasonal water deficit scenarios. An analytical model of the Thornthwaite water balance model, based on historical temperature and precipitation data, is used to evaluate the probable response of crop productivity to climate changes in selected counties in South Georgia. The input of temperature and precipitation values for each site is based on the results of three general circulation models (GCM), which were regionally tailored to the Southeastern United States. A regression analysis was preformed to establish a numerical relationship between historical yield and moisture deficits. This model, in association with projected GCM model deficits, was used to predict future crop yields. Our results showed that given all GCM models evaluated, deficit periods for the selected sites will increase both the intensity and duration droughts in the southeastern U.S. Of the two crops analyzed, it was found that soybeans showed a higher sensitivity to moisture deficits than did peanuts.

  18. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  19. TEM Characterization of High Burn-up Microstructure of U-7Mo Alloy

    SciTech Connect (OSTI)

    Jian Gan; Brandon Miller; Dennis Keiser; Adam Robinson; James Madden; Pavel Medvedev; Daniel Wachs

    2014-04-01

    As an essential part of global nuclear non-proliferation effort, the RERTR program is developing low enriched U-Mo fuels (< 20% U-235) for use in research and test reactors that currently employ highly enriched uranium fuels. One type of fuel being developed is a dispersion fuel plate comprised of U-7Mo particles dispersed in Al alloy matrix. Recent TEM characterizations of the ATR irradiated U-7Mo dispersion fuel plates include the samples with a local fission densities of 4.5, 5.2, 5.6 and 6.3 E+21 fissions/cm3 and irradiation temperatures of 101-136?C. The development of the irradiated microstructure of the U-7Mo fuel particles consists of fission gas bubble superlattice, large gas bubbles, solid fission product precipitates and their association to the large gas bubbles, grain subdivision to tens or hundreds of nanometer size, collapse of bubble superlattice, and amorphisation. This presentation will describe the observed microstructures specifically focusing on the U-7Mo fuel particles. The impact of the observed microstructure on the fuel performance and the comparison of the relevant features with that of the high burn-up UO2 fuels will be discussed.

  20. FeAl and Mo-Si-B Intermetallic Coatings Prepared by Thermal Spraying

    SciTech Connect (OSTI)

    Totemeier, T.C.; Wright, R.N.; Swank, W.D.

    2003-04-22

    FeAl and Mo-Si-B intermetallic coatings for elevated temperature environmental resistance were prepared using high-velocity oxy-fuel (HVOF) and air plasma spray (APS) techniques. For both coating types, the effect of coating parameters (spray particle velocity and temperature) on the microstructure and physical properties of the coatings was assessed. Fe-24Al (wt.%) coatings were prepared using HVOF thermal spraying at spray particle velocities varying from 540 m/s to 700 m/s. Mo-13.4Si-2.6B coatings were prepared using APS at particle velocities of 180 and 350 m/s. Residual stresses in the HVOF FeAl coatings were compressive, while stresses in the APS Mo-Si-B coatings were tensile. In both cases, residual stresses became more compressive with increasing spray particle velocity due to increased peening imparted by the spray particles. The hardness and elastic moduli of FeAl coatings also increased with increasing particle velocity, again due to an increased peening effect. For Mo-Si-B coatings, plasma spraying at 180 m/s resulted in significant oxidation of the spray particles and conversion of the T1 phase into amorphous silica and {alpha}-Mo. The T1 phase was retained after spraying at 350 m/s.