National Library of Energy BETA

Sample records for microscopy lithography surface

  1. "A Novel Objective for EUV Microscopy and EUV Lithography" Inventors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Novel Objective for EUV Microscopy and EUV Lithography" Inventors ..--.. Manfred Bitter, Kenneth Hill, Philip Efthimion. This invention is a new x-ray scheme for stigmatic...

  2. Objective for EUV microscopy, EUV lithography, and x-ray imaging

    DOE Patents [OSTI]

    Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

    2016-05-03

    Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

  3. Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy

    SciTech Connect (OSTI)

    Iberi, Vighter O.; Vlassiouk, Ivan V.; Zhang, X. -G.; Matola, Brad R.; Linn, Allison R.; Joy, David Charles; Adam Justin Rondinone

    2015-07-07

    The remarkable mechanical and electronic properties of graphene make it an ideal candidate for next generation nanoelectronics. With the recent development of commercial-level single-crystal graphene layers, the potential for manufacturing household graphene-based devices has improved, but significant challenges still remain with regards to patterning the graphene into devices. In the case of graphene supported on a substrate, traditional nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene nanoribbons but the multi-step processes they require can result in contamination of the graphene with resists and solvents. In this letter, we report the utility of scanning helium ion lithography for fabricating functional graphene nanoconductors that are supported directly on a silicon dioxide layer, and we measure the minimum feature size achievable due to limitations imposed by thermal fluctuations and ion scattering during the milling process. Further we demonstrate that ion beams, due to their positive charging nature, may be used to observe and test the conductivity of graphene-based nanoelectronic devices in situ.

  4. Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Iberi, Vighter O.; Vlassiouk, Ivan V.; Zhang, X. -G.; Matola, Brad R.; Linn, Allison R.; Joy, David Charles; Adam Justin Rondinone

    2015-07-07

    The remarkable mechanical and electronic properties of graphene make it an ideal candidate for next generation nanoelectronics. With the recent development of commercial-level single-crystal graphene layers, the potential for manufacturing household graphene-based devices has improved, but significant challenges still remain with regards to patterning the graphene into devices. In the case of graphene supported on a substrate, traditional nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene nanoribbons but the multi-step processes they require can result in contamination of the graphene with resists and solvents. In this letter, we report the utility of scanning helium ionmore » lithography for fabricating functional graphene nanoconductors that are supported directly on a silicon dioxide layer, and we measure the minimum feature size achievable due to limitations imposed by thermal fluctuations and ion scattering during the milling process. Further we demonstrate that ion beams, due to their positive charging nature, may be used to observe and test the conductivity of graphene-based nanoelectronic devices in situ.« less

  5. Maskless lithography

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Stulen, Richard H. (Livermore, CA)

    1999-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  6. Maskless lithography

    DOE Patents [OSTI]

    Sweatt, W.C.; Stulen, R.H.

    1999-02-09

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.

  7. Localized surface plasmon assisted contrast microscopy for ultrathin transparent specimens

    SciTech Connect (OSTI)

    Wei, Feifei; Lu, Dylan; Aguinaldo, Ryan; Ma, Yicong; Sinha, Sunil K.; Liu, Zhaowei

    2014-10-20

    We demonstrate a high contrast imaging technique, termed localized surface plasmon assisted contrast microscopy, by combining localized surface plasmon resonances (LSPR) and dark-field microscopy technique. Due to the sensitive response of LSPR to the refractive index of the surrounding media, this technique is capable of converting a small refractive index difference to a change in scattering intensity, resulting in a high-contrast, diffraction limited image of a thin unstained specimen with small, gradual refractive-index variation.

  8. Ion beam lithography system

    DOE Patents [OSTI]

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  9. Intermodulation electrostatic force microscopy for imaging surface photo-voltage

    SciTech Connect (OSTI)

    Borgani, Riccardo Forchheimer, Daniel; Thorn, Per-Anders; Haviland, David B.; Bergqvist, Jonas; Ingans, Olle

    2014-10-06

    We demonstrate an alternative to Kelvin Probe Force Microscopy for imaging surface potential. The open-loop, single-pass technique applies a low-frequency AC voltage to the atomic force microscopy tip while driving the cantilever near its resonance frequency. Frequency mixing due to the nonlinear capacitance gives intermodulation products of the two drive frequencies near the cantilever resonance, where they are measured with high signal to noise ratio. Analysis of this intermodulation response allows for quantitative reconstruction of the contact potential difference. We derive the theory of the method, validate it with numerical simulation and a control experiment, and we demonstrate its utility for fast imaging of the surface photo-voltage on an organic photo-voltaic material.

  10. VUV lithography

    DOE Patents [OSTI]

    George, E.V.; Oster, Y.; Mundinger, D.C.

    1990-12-25

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

  11. VUV lithography

    DOE Patents [OSTI]

    George, Edward V.; Oster, Yale; Mundinger, David C.

    1990-01-01

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

  12. Method for maskless lithography

    DOE Patents [OSTI]

    Sweatt, William C.; Stulen, Richard H.

    2000-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  13. Advances in Lithography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advances in Lithography Advances in Lithography Print Tuesday, 16 December 2014 11:40 Work featured on Applied Optics cover from ALS Beamline 11.3.2. Field-dependent wavefront aberration distribution of an extreme ultraviolet single-lens zone-plate microscope, recovered by the gradient descent algorithm customized for partially coherent imaging and targeted for fast and accurate retrieval. For information, see Yamazoe et al., pp. B34-B43, part of the Applied Optics-JOSA A cohosted feature,

  14. Maskless, resistless ion beam lithography

    SciTech Connect (OSTI)

    Ji, Qing

    2003-03-10

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O{sub 2}{sup +}, BF{sub 2}{sup +}, P{sup +} etc., for surface modification and doping applications. With optimized source condition, around 85% of BF{sub 2}{sup +}, over 90% of O{sub 2}{sup +} and P{sup +} have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He{sup +} beam is as high as 440 A/cm{sup 2} {center_dot} Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O{sub 2}{sup +} ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O{sub 2}{sup +} ions with the dose of 10{sup 15} cm{sup -2}. The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features

  15. Facile method to stain the bacterial cell surface for super-resolution fluorescence microscopy

    SciTech Connect (OSTI)

    Gunsolus, Ian L.; Hu, Dehong; Mihai, Cosmin; Lohse, Samuel E.; Lee, Chang-Soo; Torelli, Marco; Hamers, Robert J.; Murphy, Catherine; Orr, Galya; Haynes, Christy L.

    2014-01-01

    A method to fluorescently stain the surfaces of both Gram-negative and Gram-positive bacterial cells compatible with super-resolution fluorescence microscopy is presented. This method utilizes a commercially-available fluorescent probe to label primary amines at the surface of the cell. We demonstrate efficient staining of two bacterial strains, the Gram-negative Shewanella oneidensis MR-1 and the Gram-positive Bacillus subtilis 168. Using structured illumination microscopy and stochastic optical reconstruction microscopy, which require high quantum yield or specialized dyes, we show that this staining method may be used to resolve the bacterial cell surface with sub-diffraction-limited resolution. We further use this method to identify localization patterns of nanomaterials, specifically cadmium selenide quantum dots, following interaction with bacterial cells.

  16. ATOMIC FORCE LITHOGRAPHY OF NANO MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING IN AQUEOUS SOLUTIONS

    SciTech Connect (OSTI)

    Torres, R.; Mendez-Torres, A.; Lam, P.

    2011-06-09

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  17. ATOMIC FORCE LITHOGRAPHY OF NANO/MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING OF AQUEOUS SOLUTIONS

    SciTech Connect (OSTI)

    Mendez-Torres, A.; Torres, R.; Lam, P.

    2011-07-15

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  18. Cement paste surface roughness analysis using coherence scanning interferometry and confocal microscopy

    SciTech Connect (OSTI)

    Apedo, K.L.; Munzer, C.; He, H.; Montgomery, P.; Serres, N.; Fond, C.; Feugeas, F.

    2015-02-15

    Scanning electron microscopy and scanning probe microscopy have been used for several decades to better understand the microstructure of cementitious materials. Very limited work has been performed to date to study the roughness of cementitious materials by optical microscopy such as coherence scanning interferometry (CSI) and chromatic confocal sensing (CCS). The objective of this paper is to better understand how CSI can be used as a tool to analyze surface roughness and topography of cement pastes. Observations from a series of images acquired using this technique on both polished and unpolished samples are described. The results from CSI are compared with those from a STIL confocal microscopy technique (SCM). Comparison between both optical techniques demonstrates the ability of CSI to measure both polished and unpolished cement pastes. - Highlights: • Coherence scanning interferometry (CSI) was used to analyze cement paste surfaces. • The results from the CSI were compared with those from a confocal microscopy. • 3D roughness parameters were obtained using the window resizing method. • Polished and unpolished cement pastes were studied.

  19. Defect tolerant transmission lithography mask

    DOE Patents [OSTI]

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  20. Imaging of the surface resistance of an SRF cavity by low-temperature laser scanning microscopy

    SciTech Connect (OSTI)

    G. Ciovati, S.M. Anlage, A.V. Gurevich

    2013-06-01

    Temperature mapping of the outer surface of a superconducting radio-frequency cavity is a technique that is often used to identify lossy areas on the cavity surface. In this contribution, we present 2-D images of the superconducting state surface resistance R{sub s} of the inner surface of a superconducting radio-frequency (SRF) cavity obtained by low-temperature laser scanning microscopy. This technique, which is applied for the first time to study lossy regions in an operating SRF cavity, allows identifying 'hotspots' with about one order of magnitude better spatial resolution ( ~2 mm) than by thermometry. The R{sub s}-resolution is of the order of 1 {micro}{Ohm} at 3.3 GHz. Surface resistance maps with different laser power and optical images of the cavity surface are discussed in this contribution. It is also shown that the thermal gradient on the niobium surface created by the laser beam can move some of the hotspots, which are identified as locations of trapped bundle of fluxoids. The prospects for this microscope to identify defects that limit the performance of SRF cavities will also be discussed.

  1. Topography and Mechanical Property Mapping of International Simple Glass Surfaces with Atomic Force Microscopy

    SciTech Connect (OSTI)

    Pierce, Eric M

    2014-01-01

    Quantitative Nanomechanical Peak Force (PF-QNM) TappingModeTM atomic force microscopy measurements are presented for the first time on polished glass surfaces. The PF-QNM technique allows for topography and mechanical property information to be measured simultaneously at each pixel. Results for the international simple glass which represents a simplified version of SON68 glass suggests an average Young s modulus of 78.8 15.1 GPa is within the experimental error of the modulus measured for SON68 glass (83.6 2 GPa) with conventional approaches. Application of the PF-QNM technique will be extended to in situ glass corrosion experiments with the goal of gaining atomic-scale insights into altered layer development by exploiting the mechanical property differences that exist between silica gel (e.g., altered layer) and pristine glass surface.

  2. Programmable imprint lithography template

    DOE Patents [OSTI]

    Cardinale, Gregory F.; Talin, Albert A.

    2006-10-31

    A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

  3. HDL surface lipids mediate CETP binding as revealed by electron microscopy and molecular dynamics simulation

    SciTech Connect (OSTI)

    Zhang, Meng; Charles, River; Tong, Huimin; Zhang, Lei; Patel, Mili; Wang, Francis; Rames, Matthew J.; Ren, Amy; Rye, Kerry-Anne; Qiu, Xiayang; Johns, Douglas G.; Charles, M. Arthur; Ren, Gang

    2015-03-04

    Cholesteryl ester transfer protein (CETP) mediates the transfer of cholesterol esters (CE) from atheroprotective high-density lipoproteins (HDL) to atherogenic low-density lipoproteins (LDL). CETP inhibition has been regarded as a promising strategy for increasing HDL levels and subsequently reducing the risk of cardiovascular diseases (CVD). Although the crystal structure of CETP is known, little is known regarding how CETP binds to HDL. Here, we investigated how various HDL-like particles interact with CETP by electron microscopy and molecular dynamics simulations. Results showed that CETP binds to HDL via hydrophobic interactions rather than protein-protein interactions. The HDL surface lipid curvature generates a hydrophobic environment, leading to CETP hydrophobic distal end interaction. This interaction is independent of other HDL components, such as apolipoproteins, cholesteryl esters and triglycerides. Thus, disrupting these hydrophobic interactions could be a new therapeutic strategy for attenuating the interaction of CETP with HDL.

  4. HDL surface lipids mediate CETP binding as revealed by electron microscopy and molecular dynamics simulation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Meng; Charles, River; Tong, Huimin; Zhang, Lei; Patel, Mili; Wang, Francis; Rames, Matthew J.; Ren, Amy; Rye, Kerry-Anne; Qiu, Xiayang; et al

    2015-03-04

    Cholesteryl ester transfer protein (CETP) mediates the transfer of cholesterol esters (CE) from atheroprotective high-density lipoproteins (HDL) to atherogenic low-density lipoproteins (LDL). CETP inhibition has been regarded as a promising strategy for increasing HDL levels and subsequently reducing the risk of cardiovascular diseases (CVD). Although the crystal structure of CETP is known, little is known regarding how CETP binds to HDL. Here, we investigated how various HDL-like particles interact with CETP by electron microscopy and molecular dynamics simulations. Results showed that CETP binds to HDL via hydrophobic interactions rather than protein-protein interactions. The HDL surface lipid curvature generates a hydrophobicmore » environment, leading to CETP hydrophobic distal end interaction. This interaction is independent of other HDL components, such as apolipoproteins, cholesteryl esters and triglycerides. Thus, disrupting these hydrophobic interactions could be a new therapeutic strategy for attenuating the interaction of CETP with HDL.« less

  5. Atomic-scale electrochemistry on the surface of a manganite by scanning tunneling microscopy

    SciTech Connect (OSTI)

    Vasudevan, Rama K. Tselev, Alexander; Baddorf, Arthur P.; Gianfrancesco, Anthony G.

    2015-04-06

    The doped manganese oxides (manganites) have been widely studied for their colossal magnetoresistive effects, for potential applications in oxide spintronics, electroforming in resistive switching devices, and are materials of choice as cathodes in modern solid oxide fuel cells. However, little experimental knowledge of the dynamics of the surfaces of perovskite manganites at the atomic scale exists. Here, through in-situ scanning tunneling microscopy (STM), we demonstrate atomic resolution on samples of La{sub 0.625}Ca{sub 0.375}MnO{sub 3} grown on (001) SrTiO{sub 3} by pulsed laser deposition. Furthermore, by applying triangular DC waveforms of increasing amplitude to the STM tip, and measuring the tunneling current, we demonstrate the ability to both perform and monitor surface electrochemical processes at the atomic level, including formation of oxygen vacancies and removal and deposition of individual atomic units or clusters. Our work paves the way for better understanding of surface oxygen reactions in these systems.

  6. Extreme ultraviolet lithography machine

    DOE Patents [OSTI]

    Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  7. Mapping of Proteomic Composition on the Surfaces of Bacillus spores by Atomic Force Microscopy-based Immunolabeling

    SciTech Connect (OSTI)

    Plomp, M; Malkin, A J

    2008-06-02

    Atomic force microscopy provides a unique capability to image high-resolution architecture and structural dynamics of pathogens (e.g. viruses, bacteria and bacterial spores) at near molecular resolution in native conditions. Further development of atomic force microscopy in order to enable the correlation of pathogen protein surface structures with specific gene products is essential to understand the mechanisms of the pathogen life cycle. We have applied an AFM-based immunolabeling technique for the proteomic mapping of macromolecular structures through the visualization of the binding of antibodies, conjugated with nanogold particles, to specific epitopes on Bacillus spore surfaces. This information is generated while simultaneously acquiring the surface morphology of the pathogen. The immunospecificity of this labeling method was established through the utilization of specific polyclonal and monoclonal antibodies that target spore coat and exosporium epitopes of Bacillus atrophaeus and Bacillus anthracis spores.

  8. Maskless, reticle-free, lithography

    DOE Patents [OSTI]

    Ceglio, Natale M. (Livermore, CA); Markle, David A. (Saratoga, CA)

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

  9. Maskless, reticle-free, lithography

    DOE Patents [OSTI]

    Ceglio, N.M.; Markle, D.A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

  10. Decal transfer lithography

    DOE Patents [OSTI]

    Nuzzo, Ralph G.; Childs, William R.; Motala, Michael J.; Lee, Keon Jae

    2010-02-16

    A method of making a microstructure includes selectively activating a portion of a surface of a silicon-containing elastomer, contacting the activated portion with a substance, and bonding the activated portion and the substance, such that the activated portion of the surface and the substance in contact with the activated portion are irreversibly attached. The selective activation may be accomplished by positioning a mask on the surface of the silicon-containing elastomer, and irradiating the exposed portion with UV radiation.

  11. Membrane projection lithography

    DOE Patents [OSTI]

    Burckel, David Bruce; Davids, Paul S; Resnick, Paul J; Draper, Bruce L

    2015-03-17

    The various technologies presented herein relate to a three dimensional manufacturing technique for application with semiconductor technologies. A membrane layer can be formed over a cavity. An opening can be formed in the membrane such that the membrane can act as a mask layer to the underlying wall surfaces and bottom surface of the cavity. A beam to facilitate an operation comprising any of implantation, etching or deposition can be directed through the opening onto the underlying surface, with the opening acting as a mask to control the area of the underlying surfaces on which any of implantation occurs, material is removed, and/or material is deposited. The membrane can be removed, a new membrane placed over the cavity and a new opening formed to facilitate another implantation, etching, or deposition operation. By changing the direction of the beam different wall/bottom surfaces can be utilized to form a plurality of structures.

  12. Solvent Immersion Imprint Lithography

    SciTech Connect (OSTI)

    Vasdekis, Andreas E.; Wilkins, Michael J.; Grate, Jay W.; Kelly, Ryan T.; Konopka, Allan; Xantheas, Sotiris S.; Chang, M. T.

    2014-06-21

    The mechanism of polymer disolution was explored for polymer microsystem prototyping, including microfluidics and optofluidics. Polymer films are immersed in a solvent, imprinted and finally brought into contact with a non-modified surface to permanently bond. The underlying polymer-solvent interactions were experimentally and theoretically investigated, and enabled rapid polymer microsystem prototyping. During imprinting, small molecule integration in the molded surfaces was feasible, a principle applied to oxygen sensing. Polystyrene (PS) was employed for microbiological studies at extreme environmental conditions. The thermophile anaerobe Clostridium Thermocellum was grown in PS pore-scale micromodels, revealing a double mean generation lifetime than under ideal culture conditions. Microsystem prototyping through directed polymer dissolution is simple and accessible, while simultaneous patterning, bonding, and surface/volume functionalization are possible in less than one minute.

  13. X-ray lithography source

    DOE Patents [OSTI]

    Piestrup, M.A.; Boyers, D.G.; Pincus, C.

    1991-12-31

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

  14. X-ray lithography source

    DOE Patents [OSTI]

    Piestrup, Melvin A.; Boyers, David G.; Pincus, Cary

    1991-01-01

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

  15. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Investigating Extreme Ultraviolet Lithography Mask Defects Print Wednesday, 28 July 2010 00:00 Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using

  16. Interferometric Lithography Patterned Pyrolytic Carbon. (Conference...

    Office of Scientific and Technical Information (OSTI)

    Title: Interferometric Lithography Patterned Pyrolytic Carbon. Abstract not provided. Authors: Burckel, David Bruce ; Polsky, Ronen ; Washburn, Cody M. ; Wheeler, David Roger ; ...

  17. Nanopatterning of ultrananocrystalline diamond thin films via block copolymer lithography.

    SciTech Connect (OSTI)

    Ramanathan, M.; Darling, S. B.; Sumant, A. V.; Auciello, O.

    2010-07-01

    Nanopatterning of diamond surfaces is critical for the development of diamond-based microelectromechanical system/nanoelectromechanical system (MEMS/NEMS), such as resonators or switches. Micro-/nanopatterning of diamond materials is typically done using photolithography or electron beam lithography combined with reactive ion etching (RIE). In this work, we demonstrate a simple process, block copolymer (BCP) lithography, for nanopatterning of ultrananocrystalline diamond (UNCD) films to produce nanostructures suitable for the fabrication of NEMS based on UNCD. In BCP lithography, nanoscale self-assembled polymeric domains serve as an etch mask for pattern transfer. The authors used thin films of a cylinder-forming organic-inorganic BCP, poly(styrene-block-ferrocenyldimethylsilane), PS-b-PFS, as an etch mask on the surface of UNCD films. Orientational control of the etch masking cylindrical PFS blocks is achieved by manipulating the polymer film thickness in concert with the annealing treatment. We have observed that the surface roughness of UNCD layers plays an important role in transferring the pattern. Oxygen RIE was used to etch the exposed areas of the UNCD film underneath the BCP. Arrays of both UNCD posts and wirelike structures have been created using the same starting polymeric materials as the etch mask.

  18. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E.; Kubiak, Glenn D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  19. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (727 Clara St., Livermore, Alameda County, CA 94550); Kubiak, G. D. (475 Maple St., Livermore, Alameda County, CA 94550)

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  20. X-ray lithography using holographic images

    DOE Patents [OSTI]

    Howells, Malcolm R.; Jacobsen, Chris

    1995-01-01

    A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

  1. Fabrication of moth-eye structures on silicon by direct six-beam laser interference lithography

    SciTech Connect (OSTI)

    Xu, Jia; Zhang, Ziang; Weng, Zhankun; Wang, Zuobin Wang, Dapeng

    2014-05-28

    This paper presents a new method for the generation of cross-scale laser interference patterns and the fabrication of moth-eye structures on silicon. In the method, moth-eye structures were produced on a surface of silicon wafer using direct six-beam laser interference lithography to improve the antireflection performance of the material surface. The periodic dot arrays of the moth-eye structures were formed due to the ablation of the irradiance distribution of interference patterns on the wafer surface. The shape, size, and distribution of the moth-eye structures can be adjusted by controlling the wavelength, incidence angles, and exposure doses in a direct six-beam laser interference lithography setup. The theoretical and experimental results have shown that direct six-beam laser interference lithography can provide a way to fabricate cross-scale moth-eye structures for antireflection applications.

  2. Low-cost method for producing extreme ultraviolet lithography optics

    DOE Patents [OSTI]

    Folta, James A.; Montcalm, Claude; Taylor, John S.; Spiller, Eberhard A.

    2003-11-21

    Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

  3. Self-cleaning optic for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Klebanoff, Leonard E.; Stulen, Richard H.

    2003-12-16

    A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

  4. Micropatterning of metal substrate by adhesive force lithography

    SciTech Connect (OSTI)

    Seo, Soon-min; Park, Jeong-yong; Lee, Hong H.

    2005-03-28

    We introduce adhesive force lithography (AFL), a detachment-based method for patterning metal surface. In this method, all the polymer layer except for the desired pattern gets lifted up from the metal surface. The craze microstructure unique to thin polymer films on the order of 10{sup 2} nm is utilized for this AFL along with a difference in adhesive force at two interfaces. Poly(urethaneacrylate) mold, which has a high enough work of adhesion with polymer, makes AFL effective. This technique is purely additive, fast ({approx}10 s contact time), and applicable to large area patterning (10 cmx10 cm)

  5. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    blemishes. In lithography, the complex process used to create computer chips, a six-inch glass plate called a mask carries one layer of a circuit pattern-the image of which is...

  6. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  7. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  8. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  9. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  10. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  11. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  12. Extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C.; Sweeney, Donald W.; Shafer, David; McGuire, James

    2001-01-01

    Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

  13. Holographic illuminator for synchrotron-based projection lithography systems

    DOE Patents [OSTI]

    Naulleau, Patrick P.

    2005-08-09

    The effective coherence of a synchrotron beam line can be tailored to projection lithography requirements by employing a moving holographic diffuser and a stationary low-cost spherical mirror. The invention is particularly suited for use in an illuminator device for an optical image processing system requiring partially coherent illumination. The illuminator includes: (1) a synchrotron source of coherent or partially coherent radiation which has an intrinsic coherence that is higher than the desired coherence, (2) a holographic diffuser having a surface that receives incident radiation from said source, (3) means for translating the surface of the holographic diffuser in two dimensions along a plane that is parallel to the surface of the holographic diffuser wherein the rate of the motion is fast relative to integration time of said image processing system; and (4) a condenser optic that re-images the surface of the holographic diffuser to the entrance plane of said image processing system.

  14. SYSTEM CONSIDERATIONS FOR MASKLESS LITHOGRAPHY

    SciTech Connect (OSTI)

    Karnowski, Thomas Paul; Joy, David; Allard Jr, Lawrence Frederick; Clonts, Lloyd G

    2004-01-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting problems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-off switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devices are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  15. Method for the protection of extreme ultraviolet lithography optics

    DOE Patents [OSTI]

    Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

    2010-06-22

    A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

  16. Vitreous carbon mask substrate for X-ray lithography

    DOE Patents [OSTI]

    Aigeldinger, Georg; Skala, Dawn M.; Griffiths, Stewart K.; Talin, Albert Alec; Losey, Matthew W.; Yang, Chu-Yeu Peter

    2009-10-27

    The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

  17. Sequential Infiltration Synthesis for Enhancing Advanced Lithography |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Argonne National Laboratory Advanced Lithography Technology available for licensing: The invention is a plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. Benefits: The plasma etch resist

  18. Photothermal imaging scanning microscopy

    DOE Patents [OSTI]

    Chinn, Diane; Stolz, Christopher J.; Wu, Zhouling; Huber, Robert; Weinzapfel, Carolyn

    2006-07-11

    Photothermal Imaging Scanning Microscopy produces a rapid, thermal-based, non-destructive characterization apparatus. Also, a photothermal characterization method of surface and subsurface features includes micron and nanoscale spatial resolution of meter-sized optical materials.

  19. Nanoimprint-lithography Patterned Epitaxial Fe Nanowire Arrays...

    Office of Scientific and Technical Information (OSTI)

    epitaxial Fe nanowire arrays on MgO(001) substrates by nanoimprint lithography with a direct metallization of epitaxial materials through a metallic mask, which avoided the...

  20. Analysis of passivated A-286 stainless steel surfaces for mass spectrometer inlet systems by Auger electron and X-ray photoelectron spectroscopy and scanning electron microscopy

    SciTech Connect (OSTI)

    Ajo, Henry; Blankenship, Donnie; Clark, Elliot

    2014-07-25

    In this study, various commercially available surface treatments are being explored for use on stainless steel components in mass spectrometer inlet systems. Type A-286 stainless steel coupons, approximately 12.5 mm in diameter and 3 mm thick, were passivated with one of five different surface treatments; an untreated coupon served as a control. The surface and near-surface microstructure and chemistry of the coupons were investigated using sputter depth profiling using Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy (SEM). All the surface treatments studied appeared to change the surface morphology dramatically, as evidenced by lack of tool marks on the treated samples in SEM images. In terms of the passivation treatment, Vendors A-D appeared to have oxide layers that were very similar in thickness to each other (0.7–0.9 nm thick), as well as to the untreated samples (the untreated sample oxide layers appeared to be somewhat larger). Vendor E’s silicon coating appears to be on the order of 200 nm thick.

  1. Analysis of passivated A-286 stainless steel surfaces for mass spectrometer inlet systems by Auger electron and X-ray photoelectron spectroscopy and scanning electron microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ajo, Henry; Blankenship, Donnie; Clark, Elliot

    2014-07-25

    In this study, various commercially available surface treatments are being explored for use on stainless steel components in mass spectrometer inlet systems. Type A-286 stainless steel coupons, approximately 12.5 mm in diameter and 3 mm thick, were passivated with one of five different surface treatments; an untreated coupon served as a control. The surface and near-surface microstructure and chemistry of the coupons were investigated using sputter depth profiling using Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy (SEM). All the surface treatments studied appeared to change the surface morphology dramatically, as evidenced by lack of tool marks onmore » the treated samples in SEM images. In terms of the passivation treatment, Vendors A-D appeared to have oxide layers that were very similar in thickness to each other (0.7–0.9 nm thick), as well as to the untreated samples (the untreated sample oxide layers appeared to be somewhat larger). Vendor E’s silicon coating appears to be on the order of 200 nm thick.« less

  2. Plasma formed ion beam projection lithography system

    DOE Patents [OSTI]

    Leung, Ka-Ngo; Lee, Yung-Hee Yvette; Ngo, Vinh; Zahir, Nastaran

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  3. Efficient Coupling and Transport of a Surface Plasmon at 780 nm in a Gold Nanostructure

    SciTech Connect (OSTI)

    Gong, Yu; Joly, Alan G.; El-Khoury, Patrick Z.; Hess, Wayne P.

    2015-08-28

    We studied plasmonic nanostructures in single-crystal gold with scanning electron and femtosecond photoemission electron microscopies. We designed an integrated laser coupling and nanowire waveguide structure by focused ion beam lithography in single-crystal gold flakes. The photoemission results show that the laser field is efficiently coupled into a propagating surface plasmon by a simple hole structure and propagates efficiently in an adjacent nano-bar waveguide. A strong local field is created by the propagating surface plasmon at the nano-bar tip. A similar structure, with a decreased waveguide width and thickness, displayed significantly more intense photoemission indicating enhanced local electric field at the sharper tip.

  4. Real time nanoscale structural evaluation of gold structures on Si (100) surface using in-situ transmission electron microscopy

    SciTech Connect (OSTI)

    Rath, A. E-mail: ashutosh.phy@gmail.com E-mail: pvsatyam22@gmail.com; Juluri, R. R.; Satyam, P. V. E-mail: ashutosh.phy@gmail.com E-mail: pvsatyam22@gmail.com

    2014-05-14

    Transport behavior of gold nanostructures on Si(100) substrate during annealing under high vacuum has been investigated using in-situ real time transmission electron microscopy (TEM). A comparative study has been done on the morphological changes due to annealing under different vacuum environments. Au thin films of thickness ∼2.0 nm were deposited on native oxide covered silicon substrate by using thermal evaporation system. In-situ real time TEM measurements at 850 °C showed the isotropic growth of rectangular/square shaped gold-silicon alloy structures. During the growth, it is observed that the alloying occurs in liquid phase followed by transformation into the rectangular shapes. For similar system, ex-situ annealing in low vacuum (10{sup −2} millibars) at 850 °C showed the spherical gold nanostructures with no Au-Si alloy formation. Under low vacuum annealing conditions, the rate of formation of the oxide layer dominates the oxide desorption rate, resulting in the creation of a barrier layer between Au and Si, which restricts the inter diffusion of Au in to Si. This work demonstrates the important role of interfacial oxide layer on the growth of nanoscale Au-Si alloy structures during the initial growth. The time dependent TEM images are presented to offer a direct insight into the fundamental dynamics of the sintering process at the nanoscale.

  5. Compact multi-bounce projection system for extreme ultraviolet projection lithography

    DOE Patents [OSTI]

    Hudyma, Russell M.

    2002-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four optical elements providing five reflective surfaces for projecting a mask image onto a substrate. The five optical surfaces are characterized in order from object to image as concave, convex, concave, convex and concave mirrors. The second and fourth reflective surfaces are part of the same optical element. The optical system is particularly suited for ring field step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width, which effectively minimizes dynamic distortion.

  6. The structures and dynamics of atomic and molecular adsorbates on metal surfaces by scanning tunneling microscopy and low energy electron diffraction

    SciTech Connect (OSTI)

    Yoon, Hyungsuk Alexander

    1996-12-01

    Studies of surface structure and dynamics of atoms and molecules on metal surfaces are presented. My research has focused on understanding the nature of adsorbate-adsorbate and adsorbate-substrate interactions through surface studies of coverage dependency and coadsorption using both scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). The effect of adsorbate coverage on the surface structures of sulfur on Pt(111) and Rh(111) was examined. On Pt(111), sulfur forms p(2x2) at 0.25 ML of sulfur, which transforms into a more compressed ({radical}3x{radical}3)R30{degrees} at 0.33 ML. On both structures, it was found that sulfur adsorbs only in fcc sites. When the coverage of sulfur exceeds 0.33 ML, it formed more complex c({radical}3x7)rect structure with 3 sulfur atoms per unit cell. In this structure, two different adsorption sites for sulfur atoms were observed - two on fcc sites and one on hcp site within the unit cell.

  7. Potassium-induced effect on structure and chemical activity of CuxO/Cu(111) (x≤2) surface: A combined scanning tunneling microscopy and density functional theory study

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Ping; An, Wei; Stacchiola, Dario; Xu, Fang

    2015-10-16

    Potassium (K) plays an essential role in promoting catalytic reaction in many established industrial catalytic processes. Here, we report a combined study using scanning tunneling microscopy (STM) and density functional theory (DFT) in understanding the effect of depositing K on the atomic and electronic structures as well as chemical activities of CuxO/Cu(111) (x≤2). The DFT calculations observe a pseudomorphic growth of K on CuxO/Cu(111) up to 0.19 monolayer (ML) of coverage, where K binds the surface via strong ionic interaction with chemisorbed oxygen and the relatively weak electrostatic interactions with copper ions, lower and upper oxygen on the CuxO rings.more » The simulated STM pattern based on the DFT results agrees well with the experimental observations. The deposited K displays great impact on the surface electronic structure of CuxO/Cu(111), which induces significant reduction in work function and leads to a strong electron polarization on the surface. The promotion of K on the surface binding properties is selective. It varies depending on the nature of adsorbates. According to our results, K has little effect on surface acidity, while it enhances the surface basicity significantly. As a consequence, the presence of K does not help for CO adsorption on CuxO/Cu(111), but being able to accelerate the activation of CO2. Thus, such promotion strongly depends on the combinations from both geometric and electronic effects. Our results highlight the origin of promoting effect of alkalis in the design of catalysts for the complex reactions.« less

  8. Graphene nanoribbon superlattices fabricated via He ion lithography

    SciTech Connect (OSTI)

    Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Canado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

    2014-05-12

    Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel defect lines of ?1??m length and ?5?nm width were written to form nanoribbon gratings down to 20?nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ? 2 smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

  9. Photoresist composition for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (Alameda County, CA); Kubiak, G. D. (Alameda County, CA)

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  10. Properites of ultrathin films appropriate for optics capping layers in extreme ultraviolet lithography (EUVL)

    SciTech Connect (OSTI)

    Bajt, S; Edwards, N V; Madey, T E

    2007-06-25

    The contamination of optical surfaces by irradiation shortens optics lifetime and is one of the main concerns for optics used in conjunction with intense light sources, such as high power lasers, 3rd and 4th generation synchrotron sources or plasma sources used in extreme ultraviolet lithography (EUVL) tools. This paper focuses on properties and surface chemistry of different materials, which as thin layers, could be used as capping layers to protect and extend EUVL optics lifetime. The most promising candidates include single element materials such as ruthenium and rhodium, and oxides such as TiO{sub 2} and ZrO{sub 2}.

  11. Cavity-enhanced single photon emission from site-controlled In(Ga)As quantum dots fabricated using nanoimprint lithography

    SciTech Connect (OSTI)

    Tommila, J.; Hakkarainen, T. V.; Schramm, A. Guina, M.; Belykh, V. V.; Sibeldin, N. N.; Heinonen, E.

    2014-05-26

    We report on the emission dynamics of single In(Ga)As quantum dots formed in etched GaAs pits and integrated into micropillar cavities. The site-controlled quantum dots were fabricated by molecular beam epitaxy on nanoimprint lithography patterned GaAs(001) surfaces. Triggered single photon emission confirmed by photon autocorrelation measurements is demonstrated. Time-resolved photoluminescence experiments clearly show an effect of the cavity on the spontaneous emission rate of the quantum dot.

  12. Microphotonic parabolic light directors fabricated by two-photon lithography

    SciTech Connect (OSTI)

    Atwater, Jackson H; Spinelli, P.; Kosten, Emily D; Parsons, J.; Van Lare, C; Van de Groep, J; Garcia de Abajo, J.; Polman, Albert; Atwater, Harry A.

    2011-01-01

    We have fabricated microphotonic parabolic light directors using two-photon lithography, thin-film processing, and aperture formation by focused ion beam lithography. Optical transmission measurements through upright parabolic directors 22 ?m high and 10 ?m in diameter exhibit strong beam directivity with a beam divergence of 5.6, in reasonable agreement with ray-tracing and full-field electromagnetic simulations. The results indicate the suitability of microphotonic parabolic light directors for producing collimated beams for applications in advanced solar cell and light-emitting diode designs.

  13. Electron Microscopy Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electron Microscopy Center Argonne Home > EMC > EMC Home Electron Microscopy Center Web Site has moved This page has moved to http:www.anl.govcnmgroupelectron-microscopy-cente...

  14. Diffractive element in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C.; Ray-Chaudhurl, Avijit K.

    2000-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  15. Diffractive element in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C.; Ray-Chaudhuri, Avijit

    2001-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  16. Condenser for extreme-UV lithography with discharge source

    DOE Patents [OSTI]

    Sweatt, William C.; Kubiak, Glenn D.

    2001-01-01

    Condenser system, for use with a ringfield camera in projection lithography, employs quasi grazing-incidence collector mirrors that are coated with a suitable reflective metal such as ruthenium to collect radiation from a discharge source to minimize the effect of contaminant accumulation on the collecting mirrors.

  17. Ultratech Develops an Improved Lithography Tool for LED Wafer Manufacturing

    Broader source: Energy.gov [DOE]

    Ultratech modified an existing lithography tool used for semiconductor manufacturing to better meet the cost and performance targets of the high-brightness LED manufacturing industry. The goal was to make the equipment compatible with the wide range of substrate diameters and thicknesses prevalent in the industry while reducing the capital cost and the overall cost of ownership (COO).

  18. Composite patterning devices for soft lithography

    DOE Patents [OSTI]

    Rogers, John A.; Menard, Etienne

    2007-03-27

    The present invention provides methods, devices and device components for fabricating patterns on substrate surfaces, particularly patterns comprising structures having microsized and/or nanosized features of selected lengths in one, two or three dimensions. The present invention provides composite patterning devices comprising a plurality of polymer layers each having selected mechanical properties, such as Young's Modulus and flexural rigidity, selected physical dimensions, such as thickness, surface area and relief pattern dimensions, and selected thermal properties, such as coefficients of thermal expansion, to provide high resolution patterning on a variety of substrate surfaces and surface morphologies.

  19. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System

    SciTech Connect (OSTI)

    Jiang, Ximan

    2006-05-18

    have been studied. The dependence of the throughput with the exposure field size and the speed of the mechanical stage has been investigated. In order to perform maskless lithography, different micro-fabricated pattern generators have been developed for the MMRL system. Ion beamlet switching has been successfully demonstrated on the MMRL system. A positive bias voltage around 10 volts is sufficient to switch off the ion current on the micro-fabricated pattern generators. Some unexpected problems, such as the high-energy secondary electron radiations, have been discovered during the experimental investigation. Thermal and structural analysis indicates that the aperture displacement error induced by thermal expansion can satisfy the 3{delta} CD requirement for lithography nodes down to 25 nm. The cross-talking effect near the surface and inside the apertures of the pattern generator has been simulated in a 3-D ray-tracing code. New pattern generator design has been proposed to reduce the cross-talking effect. In order to eliminate the surface charging effect caused by the secondary electrons, a new beam-switching scheme in which the switching electrodes are immersed in the plasma has been demonstrated on a mechanically fabricated pattern generator.

  20. True atomic-scale imaging of a spinel Li{sub 4}Ti{sub 5}O{sub 12}(111) surface in aqueous solution by frequency-modulation atomic force microscopy

    SciTech Connect (OSTI)

    Kitta, Mitsunori, E-mail: m-kitta@aist.go.jp; Kohyama, Masanori [Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Onishi, Hiroshi [Department of Chemistry, Graduate School of Science, Kobe University 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)

    2014-09-15

    Spinel-type lithium titanium oxide (LTO; Li{sub 4}Ti{sub 5}O{sub 12}) is a negative electrode material for lithium-ion batteries. Revealing the atomic-scale surface structure of LTO in liquid is highly necessary to investigate its surface properties in practical environments. Here, we reveal an atomic-scale image of the LTO(111) surface in LiCl aqueous solution using frequency-modulation atomic force microscopy. Atomically flat terraces and single steps having heights of multiples of 0.5?nm were observed in the aqueous solution. Hexagonal bright spots separated by 0.6?nm were also observed on the flat terrace part, corresponding to the atomistic contrast observed in the ultrahigh vacuum condition, which suggests that the basic atomic structure of the LTO(111) surface is retained without dramatic reconstruction even in the aqueous solution.

  1. Fourier plane imaging microscopy

    SciTech Connect (OSTI)

    Dominguez, Daniel Peralta, Luis Grave de; Alharbi, Nouf; Alhusain, Mdhaoui; Bernussi, Ayrton A.

    2014-09-14

    We show how the image of an unresolved photonic crystal can be reconstructed using a single Fourier plane (FP) image obtained with a second camera that was added to a traditional compound microscope. We discuss how Fourier plane imaging microscopy is an application of a remarkable property of the obtained FP images: they contain more information about the photonic crystals than the images recorded by the camera commonly placed at the real plane of the microscope. We argue that the experimental results support the hypothesis that surface waves, contributing to enhanced resolution abilities, were optically excited in the studied photonic crystals.

  2. Etched-multilayer phase shifting masks for EUV lithography

    DOE Patents [OSTI]

    Chapman, Henry N.; Taylor, John S.

    2005-04-05

    A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

  3. Maskless micro-ion-beam reduction lithography system

    DOE Patents [OSTI]

    Leung, Ka-Ngo; Barletta, William A.; Patterson, David O.; Gough, Richard A.

    2005-05-03

    A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.

  4. Low Cost Lithography Tool for High Brightness LED Manufacturing

    SciTech Connect (OSTI)

    Andrew Hawryluk; Emily True

    2012-06-30

    The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

  5. Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography

    DOE Patents [OSTI]

    Chapman, Henry N.; Nugent, Keith A.

    2001-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated beam at grazing incidence. The ripple plate comprises a plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  6. Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography

    DOE Patents [OSTI]

    Chapman, Henry N.; Nugent, Keith A.

    2002-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated or converging beam at grazing incidence. The ripple plate comprises a flat or curved plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  7. Resolution Limits of Electron-beam Lithography Pushed Towards the Atomic

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scale | MIT-Harvard Center for Excitonics Resolution Limits of Electron-beam Lithography Pushed Towards the Atomic Scale 10.22.2013

  8. X-ray lithography using holographic images

    DOE Patents [OSTI]

    Howells, M.S.; Jacobsen, C.

    1997-03-18

    Methods for forming X-ray images having 0.25 {micro}m minimum line widths on X-ray sensitive material are presented. A holographic image of a desired circuit pattern is projected onto a wafer or other image-receiving substrate to allow recording of the desired image in photoresist material. In one embodiment, the method uses on-axis transmission and provides a high flux X-ray source having modest monochromaticity and coherence requirements. A layer of light-sensitive photoresist material on a wafer with a selected surface is provided to receive the image(s). The hologram has variable optical thickness and variable associated optical phase angle and amplitude attenuation for transmission of the X-rays. A second embodiment uses off-axis holography. The wafer receives the holographic image by grazing incidence reflection from a hologram printed on a flat metal or other highly reflecting surface or substrate. In this second embodiment, an X-ray beam with a high degree of monochromaticity and spatial coherence is required. 15 figs.

  9. X-ray lithography using holographic images

    DOE Patents [OSTI]

    Howells, Malcolm S.; Jacobsen, Chris

    1997-01-01

    Methods for forming X-ray images having 0.25 .mu.m minimum line widths on X-ray sensitive material are presented. A holgraphic image of a desired circuit pattern is projected onto a wafer or other image-receiving substrate to allow recording of the desired image in photoresist material. In one embodiment, the method uses on-axis transmission and provides a high flux X-ray source having modest monochromaticity and coherence requirements. A layer of light-sensitive photoresist material on a wafer with a selected surface is provided to receive the image(s). The hologram has variable optical thickness and variable associated optical phase angle and amplitude attenuation for transmission of the X-rays. A second embodiment uses off-axis holography. The wafer receives the holographic image by grazing incidence reflection from a hologram printed on a flat metal or other highly reflecting surface or substrate. In this second embodiment, an X-ray beam with a high degree of monochromaticity and spatial coherence is required.

  10. Imaging the surface morphology, chemistry and conductivity of LiNi 1/3 Fe 1/3 Mn 4/3 O 4 crystalline facets using scanning transmission X-ray microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, Jigang; Wang, Jian; Cutler, Jeffrey; Hu, Enyuan; Yang, Xiao-Qing

    2016-07-26

    We have employed scanning transmission X-ray microscopy (STXM) using the X-ray fluorescence mode in order to elucidate the chemical structures at Ni, Fe, Mn and O sites from the (111) and (100) facets of micron-sized LiNi1/3Fe1/3Mn4/3O4 energy material particles. Furthermore, STXM imaging using electron yield mode has mapped out the surface conductivity of the crystalline particles. Our study presents a novel approach that visualizes local element segregation, chemistry and conductivity variation among different crystal facets, which will assist further tailoring of the morphology and surface structure of this high voltage spinel lithium ion battery cathode material.

  11. High numerical aperture projection system for extreme ultraviolet projection lithography

    DOE Patents [OSTI]

    Hudyma, Russell M.

    2000-01-01

    An optical system is described that is compatible with extreme ultraviolet radiation and comprises five reflective elements for projecting a mask image onto a substrate. The five optical elements are characterized in order from object to image as concave, convex, concave, convex, and concave mirrors. The optical system is particularly suited for ring field, step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width which effectively minimizes dynamic distortion. The present invention allows for higher device density because the optical system has improved resolution that results from the high numerical aperture, which is at least 0.14.

  12. NREL: Measurements and Characterization - Scanning Probe Microscopy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scanning Probe Microscopy Photo of NREL researcher using scanning probe microscope. Capability of use with ultra-high vacuum makes NREL Scanning Probe Microscopy particularly valuable for certain applications. Scanning probe microscopy (SPM) provides surface images at up to atomic scale and other valuable high-resolution data. SPM encompasses a group of techniques that use very sharp tips that scan extremely closely (several nm) to or in contact with the material being analyzed. The interaction

  13. Nanoscale effects in the characterization of viscoelastic materials with atomic force microscopy: Coupling of a quasi-three-dimensional standard linear solid model with in-plane surface interactions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Solares, Santiago D.

    2016-04-15

    Significant progress has been accomplished in the development of experimental contact-mode and dynamic-mode atomic force microscopy (AFM) methods designed to measure surface material properties. However, current methods are based on one-dimensional (1D) descriptions of the tip-sample interaction forces, thus neglecting the intricacies involved in the material behavior of complex samples (such as soft viscoelastic materials) as well as the differences in material response between the surface and the bulk. In order to begin to address this gap, a computational study is presented where the sample is simulated using an enhanced version of a recently introduced model that treats the surfacemore » as a collection of standard-linear-solid viscoelastic elements. The enhanced model introduces in-plane surface elastic forces that can be approximately related to a two-dimensional (2D) Young's modulus. Relevant cases are discussed for single-and multifrequency intermittent-contact AFM imaging, with focus on the calculated surface indentation profiles and tip-sample interaction force curves, as well as their implications with regards to experimental interpretation. A variety of phenomena are examined in detail, which highlight the need for further development of more physically accurate sample models that are specifically designed for AFM simulation. As a result, a multifrequency AFM simulation tool based on the above sample model is provided as supporting information.« less

  14. Potassium-induced effect on structure and chemical activity of CuxO/Cu(111) (x≤2) surface: A combined scanning tunneling microscopy and density functional theory study

    SciTech Connect (OSTI)

    Liu, Ping; An, Wei; Stacchiola, Dario; Xu, Fang

    2015-10-16

    Potassium (K) plays an essential role in promoting catalytic reaction in many established industrial catalytic processes. Here, we report a combined study using scanning tunneling microscopy (STM) and density functional theory (DFT) in understanding the effect of depositing K on the atomic and electronic structures as well as chemical activities of CuxO/Cu(111) (x≤2). The DFT calculations observe a pseudomorphic growth of K on CuxO/Cu(111) up to 0.19 monolayer (ML) of coverage, where K binds the surface via strong ionic interaction with chemisorbed oxygen and the relatively weak electrostatic interactions with copper ions, lower and upper oxygen on the CuxO rings. The simulated STM pattern based on the DFT results agrees well with the experimental observations. The deposited K displays great impact on the surface electronic structure of CuxO/Cu(111), which induces significant reduction in work function and leads to a strong electron polarization on the surface. The promotion of K on the surface binding properties is selective. It varies depending on the nature of adsorbates. According to our results, K has little effect on surface acidity, while it enhances the surface basicity significantly. As a consequence, the presence of K does not help for CO adsorption on CuxO/Cu(111), but being able to accelerate the activation of CO2. Thus, such promotion strongly depends on the combinations from both geometric and electronic effects. Our results highlight the origin of promoting effect of alkalis in the design of catalysts for the complex reactions.

  15. Soft x-ray reduction camera for submicron lithography

    DOE Patents [OSTI]

    Hawryluk, A.M.; Seppala, L.G.

    1991-03-26

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm[sup 2]. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics. 9 figures.

  16. Soft x-ray reduction camera for submicron lithography

    DOE Patents [OSTI]

    Hawryluk, Andrew M.; Seppala, Lynn G.

    1991-01-01

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm.sup.2. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics.

  17. Critical illumination condenser for x-ray lithography

    DOE Patents [OSTI]

    Cohen, S.J.; Seppala, L.G.

    1998-04-07

    A critical illumination condenser system is disclosed, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 {micro}m source and requires a magnification of 26. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth. 6 figs.

  18. Critical illumination condenser for x-ray lithography

    DOE Patents [OSTI]

    Cohen, Simon J.; Seppala, Lynn G.

    1998-01-01

    A critical illumination condenser system, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 .mu.m source and requires a magnification of 26.times.. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth.

  19. Development of ion sources for ion projection lithography

    SciTech Connect (OSTI)

    Lee, Y.; Gough, R.A.; Kunkel, W.B.; Leung, K.N.; Perkins, L.T.

    1996-05-01

    Multicusp ion sources are capable of generating ion beams with low axial energy spread as required by the Ion Projection Lithography (IPL). Longitudinal ion energy spread has been studied in two different types of plasma discharge: the filament discharge ion source characterized by its low axial energy spread, and the RF-driven ion source characterized by its long source lifetime. For He{sup +} ions, longitudinal ion energy spreads of 1-2 eV were measured for a filament discharge multicusp ion source which is within the IPL device requirements. Ion beams with larger axial energy spread were observed in the RF-driven source. A double-chamber ion source has been designed which combines the advantages of low axial energy spread of the filament discharge ion source with the long lifetime of the RF-driven source. The energy spread of the double chamber source is lower than that of the RF-driven source.

  20. Experimental demonstration of line-width modulation in plasmonic lithography using a solid immersion lens-based active nano-gap control

    SciTech Connect (OSTI)

    Lee, Won-Sup; Kim, Taeseob; Choi, Guk-Jong; Lim, Geon; Joe, Hang-Eun; Gang, Myeong-Gu; Min, Byung-Kwon; Park, No-Cheol; Moon, Hyungbae; Kim, Do-Hyung; Park, Young-Pil

    2015-02-02

    Plasmonic lithography has been used in nanofabrication because of its utility beyond the diffraction limit. The resolution of plasmonic lithography depends on the nano-gap between the nanoaperture and the photoresist surface—changing the gap distance can modulate the line-width of the pattern. In this letter, we demonstrate solid-immersion lens based active non-contact plasmonic lithography, applying a range of gap conditions to modulate the line-width of the pattern. Using a solid-immersion lens-based near-field control system, the nano-gap between the exit surface of the nanoaperture and the media can be actively modulated and maintained to within a few nanometers. The line-widths of the recorded patterns using 15- and 5-nm gaps were 47 and 19.5 nm, respectively, which matched closely the calculated full-width at half-maximum. From these results, we conclude that changing the nano-gap within a solid-immersion lens-based plasmonic head results in varying line-width patterns.

  1. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

    DOE Patents [OSTI]

    Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

    1998-06-02

    Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

  2. Four-mirror extreme ultraviolet (EUV) lithography projection system

    DOE Patents [OSTI]

    Cohen, Simon J; Jeong, Hwan J; Shafer, David R

    2000-01-01

    The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures. The convex spherical mirror is positioned on the optical axis, and has a substantially or perfectly spherical shape. The spherical concave mirror is positioned substantially on the opposite side of the optical axis from the hyperbolic and elliptical mirrors. Because it is positioned off-axis to a degree, the spherical concave mirror has some asphericity to counter aberrations. The spherical concave mirror forms a relatively large, uniform field on the wafer substrate. The mirrors can be tilted or decentered slightly to achieve further increase in the field size.

  3. Fundamentals of embossing nanoimprint lithography in polymer substrates.

    SciTech Connect (OSTI)

    Simmons, Blake Alexander; King, William P.

    2011-02-01

    The convergence of micro-/nano-electromechanical systems (MEMS/NEMS) and biomedical industries is creating a need for innovation and discovery around materials, particularly in miniaturized systems that use polymers as the primary substrate. Polymers are ubiquitous in the microelectronics industry and are used as sensing materials, lithography tools, replication molds, microfluidics, nanofluidics, and biomedical devices. This diverse set of operational requirements dictates that the materials employed must possess different properties in order to reduce the cost of production, decrease the scale of devices to the appropriate degree, and generate engineered devices with new functional properties at cost-competitive levels of production. Nanoscale control of polymer deformation at a massive scale would enable breakthroughs in all of the aforementioned applications, but is currently beyond the current capabilities of mass manufacturing. This project was focused on developing a fundamental understanding of how polymers behave under different loads and environments at the nanoscale in terms of performance and fidelity in order to fill the most critical gaps in our current knowledgebase on this topic.

  4. Lithography with MeV Energy Ions for Biomedical Applications: Accelerator Considerations

    SciTech Connect (OSTI)

    Sangyuenyongpipat, S.; Whitlow, H. J.; Nakagawa, S. T.; Yoshida, E.

    2009-03-10

    MeV ion beam lithographies are very powerful techniques for 3D direct writing in positive or negative photoresist materials. Nanometer-scale rough structures, or clear areas with straight vertical sidewalls as thin as a few 10's of nm in a resist of a few nm to 100 {mu}m thickness can be made. These capabilities are particularly useful for lithography in cellular- and sub-cellular level biomedical research and technology applications. It can be used for tailor making special structures such as optical waveguides, biosensors, DNA sorters, spotting plates, systems for DNA, protein and cell separation, special cell-growth substrates and microfluidic lab-on-a-chip devices. Furthermore MeV ion beam lithography can be used for rapid prototyping, and also making master stamps and moulds for mass production by hot embossing and nanoimprint lithography. The accelerator requirements for three different high energy ion beam lithography techniques are overviewed. We consider the special requirements placed on the accelerator and how this is achieved for a commercial proton beam writing tool.

  5. Nonlinear vibrational microscopy

    DOE Patents [OSTI]

    Holtom, Gary R.; Xie, Xiaoliang Sunney; Zumbusch, Andreas

    2000-01-01

    The present invention is a method and apparatus for microscopic vibrational imaging using coherent Anti-Stokes Raman Scattering or Sum Frequency Generation. Microscopic imaging with a vibrational spectroscopic contrast is achieved by generating signals in a nonlinear optical process and spatially resolved detection of the signals. The spatial resolution is attained by minimizing the spot size of the optical interrogation beams on the sample. Minimizing the spot size relies upon a. directing at least two substantially co-axial laser beams (interrogation beams) through a microscope objective providing a focal spot on the sample; b. collecting a signal beam together with a residual beam from the at least two co-axial laser beams after passing through the sample; c. removing the residual beam; and d. detecting the signal beam thereby creating said pixel. The method has significantly higher spatial resolution then IR microscopy and higher sensitivity than spontaneous Raman microscopy with much lower average excitation powers. CARS and SFG microscopy does not rely on the presence of fluorophores, but retains the resolution and three-dimensional sectioning capability of confocal and two-photon fluorescence microscopy. Complementary to these techniques, CARS and SFG microscopy provides a contrast mechanism based on vibrational spectroscopy. This vibrational contrast mechanism, combined with an unprecedented high sensitivity at a tolerable laser power level, provides a new approach for microscopic investigations of chemical and biological samples.

  6. Soft X-ray Lithography Beamline at the Siam Photon Laboratory

    SciTech Connect (OSTI)

    Klysubun, P.; Chomnawang, N.; Songsiriritthigul, P.

    2007-01-19

    Construction of a soft x-ray lithography beamline utilizing synchrotron radiation generated by one of the bending magnets at the Siam Photon Laboratory is finished and the beamline is currently in a commissioning period. The beamline was modified from the existing monitoring beamline and is intended for soft x-ray lithographic processing and radiation biological research. The lithography exposure station with a compact one-dimensional scanning mechanism was constructed and assembled in-house. The front-end of the beamline has been modified to allow larger exposure area. The exposure station for studying radiation effects on biological samples will be set up in tandem with the lithography station, with a Mylar window for isolation. Several improvements to both the beamline and the exposure stations, such as improved scanning speed and the ability to adjust the exposure spectrum by means of low-Z filters, are planned and will be implemented in the near future.

  7. Dynamic Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Evans, James E.; Jungjohann, K. L.; Browning, Nigel D.

    2012-10-12

    Dynamic transmission electron microscopy (DTEM) combines the benefits of high spatial resolution electron microscopy with the high temporal resolution of ultrafast lasers. The incorporation of these two components into a single instrument provides a perfect platform for in situ observations of material processes. However, previous DTEM applications have focused on observing structural changes occurring in samples exposed to high vacuum. Therefore, in order to expand the pump-probe experimental regime to more natural environmental conditions, in situ gas and liquid chambers must be coupled with Dynamic TEM. This chapter describes the current and future applications of in situ liquid DTEM to permit time-resolved atomic scale observations in an aqueous environment, Although this chapter focuses mostly on in situ liquid imaging, the same research potential exists for in situ gas experiments and the successful integration of these techniques promises new insights for understanding nanoparticle, catalyst and biological protein dynamics with unprecedented spatiotemporal resolution.

  8. NREL: Measurements and Characterization - Atomic Force Microscopy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Force Microscopy Atomic Force Microscopy (AFM) operates in several modes. In contact mode, a tip that is attached to a cantilever is scanned over the sample surface, while the force between tip and sample is measured. While the tip is scanned laterally, the force is kept constant by moving the cantilever/tip assembly up and down, so that the deflection of the cantilever is kept constant. The vertical movement of the cantilever/tip assembly is recorded and used to generate an image of the

  9. Lithography process for patterning HgI2 photonic devices

    DOE Patents [OSTI]

    Mescher, Mark J.; James, Ralph B.; Hermon, Haim

    2004-11-23

    A photolithographic process forms patterns on HgI.sub.2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI.sub.2 surfaces and for producing trenches in HgI.sub.2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.

  10. Extreme-UV lithography vacuum chamber zone seal

    DOE Patents [OSTI]

    Haney, Steven J.; Herron, Donald Joe; Klebanoff, Leonard E.; Replogle, William C.

    2003-04-15

    Control of particle contamination on the reticle and carbon contamination of optical surfaces in photolithography systems can be achieved by the establishment of multiple pressure zones in the photolithography systems. The different zones will enclose the reticle, projection optics, wafer, and other components of system. The system includes a vacuum apparatus that includes: a housing defining a vacuum chamber; one or more metrology trays situated within the vacuum chamber each of which is supported by at least one support member, wherein the tray separates the vacuum chamber into a various compartments that are maintained at different pressures; and conductance seal devices for adjoining the perimeter of each tray to an inner surface of the housing wherein the tray is decoupled from vibrations emanating from the inner surface of the housing.

  11. Extreme-UV lithography vacuum chamber zone seal

    DOE Patents [OSTI]

    Haney, Steven J.; Herron, Donald Joe; Klebanoff, Leonard E.; Replogle, William C.

    2001-01-01

    Control of particle contamination on the reticle and carbon contamination of optical surfaces in photolithography systems can be achieved by the establishment of multiple pressure zones in the photolithography systems. The different zones will enclose the reticle, projection optics, wafer, and other components of system. The system includes a vacuum apparatus that includes: a housing defining a vacuum chamber; one or more metrology trays situated within the vacuum chamber each of which is supported by at least one support member, wherein the tray separates the vacuum chamber into a various compartments that are maintained at different pressures; and conductance seal devices for adjoining the perimeter of each tray to an inner surface of the housing wherein the tray is decoupled from vibrations emanating from the inner surface of the housing.

  12. Extreme-UV lithography vacuum chamber zone seal

    DOE Patents [OSTI]

    Haney, Steven J.; Herron, Donald Joe; Klebanoff, Leonard E.; Replogle, William C.

    2003-04-08

    Control of particle contamination on the reticle and carbon contamination of optical surfaces in photolithography systems can be achieved by the establishment of multiple pressure zones in the photolithography systems. The different zones will enclose the reticle, projection optics, wafer, and other components of system. The system includes a vacuum apparatus that includes: a housing defining a vacuum chamber; one or more metrology trays situated within the vacuum chamber each of which is supported by at least one support member, wherein the tray separates the vacuum chamber into a various compartments that are maintained at different pressures; and conductance seal devices for adjoining the perimeter of each tray to an inner surface of the housing wherein the tray is decoupled from vibrations emanating from the inner surface of the housing.

  13. Lithography-free large-area metamaterials for stable thermophotovoltaic energy conversion

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Coppens, Zachary J.; Kravchenko, Ivan I.; Valentine, Jason G.

    2016-02-08

    A large-area metamaterial thermal emitter is fabricated using facile, lithography-free techniques. The device is composed of conductive oxides, refractory ceramics, and noble metals and shows stable, selective emission after exposure to 1173 K for 22 h in oxidizing and inert atmospheres. Lastly, the results indicate that the metamaterial can be used to achieve high-performance thermophotovoltaic devices for applications such as portable power generation.

  14. Microscopy of photoionisation processes

    SciTech Connect (OSTI)

    Aseyev, S A; Mironov, B N; Minogin, V G; Cherkun, Aleksandr P; Chekalin, Sergei V

    2013-04-30

    A method is demonstrated which combines the ionisation of free molecules by a sharply focused femtosecond laser beam and projection microscopy in a divergent electric field. The electric field is produced in vacuum between a metallic tip and a flat positionsensitive charged particle detector. The method enables investigation of photoionisation processes in low-density gases with a subdiffraction spatial resolution and can be used as well in profile measurements for sharply focused, intense laser beams. In a demonstration experiment, a femtosecond laser beam with a peak intensity of {approx}10{sup 14} W cm{sup -2} was focused to a 40-{mu}m-diameter waist in vacuum near a millimetre-size tip and {approx}2-{mu}m spatial resolution was achieved. According to our estimates, the use of a sharper tip will ensure a submicron spatial resolution, which is a crucial condition for the spatial diagnostics of sharply focused short-wavelength VUV radiation and X-rays. (extreme light fields and their applications)

  15. Ultrafast scanning probe microscopy

    DOE Patents [OSTI]

    Weiss, S.; Chemla, D.S.; Ogletree, D.F.; Botkin, D.

    1995-05-16

    An ultrafast scanning probe microscopy method is described for achieving subpicosecond-temporal resolution and submicron-spatial resolution of an observation sample. In one embodiment of the present claimed invention, a single short optical pulse is generated and is split into first and second pulses. One of the pulses is delayed using variable time delay means. The first pulse is then directed at an observation sample located proximate to the probe of a scanning probe microscope. The scanning probe microscope produces probe-sample signals indicative of the response of the probe to characteristics of the sample. The second pulse is used to modulate the probe of the scanning probe microscope. The time delay between the first and second pulses is then varied. The probe-sample response signal is recorded at each of the various time delays created between the first and second pulses. The probe-sample response signal is then plotted as a function of time delay to produce a cross-correlation of the probe sample response. In so doing, the present invention provides simultaneous subpicosecond-temporal resolution and submicron-spatial resolution of the sample. 6 Figs.

  16. Ultrafast scanning probe microscopy

    DOE Patents [OSTI]

    Weiss, Shimon; Chemla, Daniel S.; Ogletree, D. Frank; Botkin, David

    1995-01-01

    An ultrafast scanning probe microscopy method for achieving subpicosecond-temporal resolution and submicron-spatial resolution of an observation sample. In one embodiment of the present claimed invention, a single short optical pulse is generated and is split into first and second pulses. One of the pulses is delayed using variable time delay means. The first pulse is then directed at an observation sample located proximate to the probe of a scanning probe microscope. The scanning probe microscope produces probe-sample signals indicative of the response of the probe to characteristics of the sample. The second pulse is used to modulate the probe of the scanning probe microscope. The time delay between the first and second pulses is then varied. The probe-sample response signal is recorded at each of the various time delays created between the first and second pulses. The probe-sample response signal is then plotted as a function of time delay to produce a cross-correlation of the probe sample response. In so doing, the present invention provides simultaneous subpicosecond-temporal resolution and submicron-spatial resolution of the sample.

  17. The Future of Electron Microscopy

    SciTech Connect (OSTI)

    Zheng, Haimei

    2015-05-06

    Berkeley Lab scientist Haimei Zheng discusses the future of electron microscopy and her breakthrough research into examining liquids using an electron microscope.

  18. Low thermal distortion extreme-UV lithography reticle

    DOE Patents [OSTI]

    Gianoulakis, Steven E.; Ray-Chaudhuri, Avijit K.

    2001-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  19. Low thermal distortion extreme-UV lithography reticle

    DOE Patents [OSTI]

    Gianoulakis, Steven E.; Ray-Chaudhuri, Avijit K.

    2002-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  20. Low thermal distortion Extreme-UV lithography reticle and method

    DOE Patents [OSTI]

    Gianoulakis, Steven E.; Ray-Chaudhuri, Avijit K.

    2002-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  1. Chemical Effect of Dry and Wet Cleaning of the Ru Protective Layer of the Extreme ultraviolet (EUV) Lithography Reflector

    SciTech Connect (OSTI)

    Belau, Leonid; Park, Jeong Y.; Liang, Ted; Seo, Hyungtak; Somorjai, Gabor A.

    2009-04-10

    The authors report the chemical influence of cleaning of the Ru capping layer on the extreme ultraviolet (EUV) reflector surface. The cleaning of EUV reflector to remove the contamination particles has two requirements: to prevent corrosion and etching of the reflector surface and to maintain the reflectivity functionality of the reflector after the corrosive cleaning processes. Two main approaches for EUV reflector cleaning, wet chemical treatments [sulfuric acid and hydrogen peroxide mixture (SPM), ozonated water, and ozonated hydrogen peroxide] and dry cleaning (oxygen plasma and UV/ozone treatment), were tested. The changes in surface morphology and roughness were characterized using scanning electron microscopy and atomic force microscopy, while the surface etching and change of oxidation states were probed with x-ray photoelectron spectroscopy. Significant surface oxidation of the Ru capping layer was observed after oxygen plasma and UV/ozone treatment, while the oxidation is unnoticeable after SPM treatment. Based on these surface studies, the authors found that SPM treatment exhibits the minimal corrosive interactions with Ru capping layer. They address the molecular mechanism of corrosive gas and liquid-phase chemical interaction with the surface of Ru capping layer on the EUV reflector.

  2. Atomically resolved force microscopy at room temperature

    SciTech Connect (OSTI)

    Morita, Seizo

    2014-04-24

    Atomic force microscopy (AFM) can now not only image individual atoms but also construct atom letters using atom manipulation method even at room temperature (RT). Therefore, the AFM is the second generation atomic tool following the scanning tunneling microscopy (STM). However the AFM can image even insulating atoms, and also directly measure/map the atomic force and potential at the atomic scale. Noting these advantages, we have been developing a bottom-up nanostructuring system at RT based on the AFM. It can identify chemical species of individual atoms and then manipulate selected atom species to the predesigned site one-by-one to assemble complex nanostructures consisted of multi atom species at RT. Here we introduce our results toward atom-by-atom assembly of composite nanostructures based on the AFM at RT including the latest result on atom gating of nano-space for atom-by-atom creation of atom clusters at RT for semiconductor surfaces.

  3. Wafer chamber having a gas curtain for extreme-UV lithography

    DOE Patents [OSTI]

    Kanouff, Michael P.; Ray-Chaudhuri, Avijit K.

    2001-01-01

    An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

  4. Multilayer mirror with enhanced spectral selectivity for the next generation extreme ultraviolet lithography

    SciTech Connect (OSTI)

    Medvedev, V. V. Kruijs, R. W. E. van de; Yakshin, A. E.; Novikova, N. N.; Krivtsun, V. M.; Louis, E.; Bijkerk, F.; MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede ; Yakunin, A. M.

    2013-11-25

    We have demonstrated a hybrid extreme ultraviolet (EUV) multilayer mirror for 6.x nm radiation that provides selective suppression for infrared (IR) radiation. The mirror consists of an IR-transparent LaN∕B multilayer stack which is used as EUV-reflective coating and antireflective (AR) coating to suppress IR. The AR coating can be optimized to suppress CO{sub 2} laser radiation at the wavelength of 10.6 μm, which is of interest for application in next-generation EUV lithography systems.

  5. Diffraction spectral filter for use in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C.; Tichenor, Daniel A.; Bernardez, Luis J.

    2002-01-01

    A condenser system for generating a beam of radiation includes a source of radiation light that generates a continuous spectrum of radiation light; a condenser comprising one or more first optical elements for collecting radiation from the source of radiation light and for generating a beam of radiation; and a diffractive spectral filter for separating first radiation light having a particular wavelength from the continuous spectrum of radiation light. Cooling devices can be employed to remove heat generated. The condenser system can be used with a ringfield camera in projection lithography.

  6. In Situ Transmission Electron Microscopy

    Office of Scientific and Technical Information (OSTI)

    ... Nanofactory Atomic Force Microscopy (AFM) Stage * Measures force interactions on samples with higher sensitivity than the NanoIndentation stage * Load range between 10 - 2,000 nN * ...

  7. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    SciTech Connect (OSTI)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-07-07

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6 through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  8. Development characteristics of polymethyl methacrylate in alcohol/water mixtures. A lithography and Raman spectroscopy study

    SciTech Connect (OSTI)

    Ocola, Leonidas E.; Costales, Maya; Gosztola, David J.

    2015-12-10

    Poly methyl methacrylate (PMMA) is the most widely used resist in electron beam lithography. This paper reports on a lithography and Raman spectroscopy study of development characteristics of PMMA in methanol, ethanol and isopropanol mixtures with water as developers. We have found that ethanol/water mixtures at a 4:1 volume ratio are an excellent, high resolution, non-toxic, developer for exposed PMMA. We also have found that the proper methodology to use so that contrast data can be compared to techniques used in polymer science is not to rinse the developed resist but to immediately dry with nitrogen. Our results show how powerful simple lithographic techniques can be used to study ternary polymer solvent solutions when compared to other techniques used in the literature. Raman data shows that there both tightly bonded –OH groups and non-hydrogen bonded –OH groups play a role in the development of PMMA. Tightly hydrogen bonded –OH groups show pure Lorentzian Raman absorption only in the concentration ranges where ethanol/water and IPA/water mixtures are effective developers of PMMA. The impact of the understanding these interactions may open doors to a new developers of other electron beam resists that can reduce the toxicity of the waste stream.

  9. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    SciTech Connect (OSTI)

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven Reitzenstein, Stephan; Strittmatter, André

    2015-07-15

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  10. Soft holographic interference lithography microlens for enhanced organic light emitting diode light extraction

    SciTech Connect (OSTI)

    Park, Joong-Mok; Gan, Zhengqing; Leung, Wai Y.; Liu, Rui; Ye, Zhuo; Constant, Kristen; Shinar, Joseph; Shinar, Ruth; Ho, Kai-Ming

    2011-06-06

    Very uniform 2 {micro}m-pitch square microlens arrays ({micro}LAs), embossed on the blank glass side of an indium-tin-oxide (ITO)-coated 1.1 mm-thick glass, are used to enhance light extraction from organic light-emitting diodes (OLEDs) by {approx}100%, significantly higher than enhancements reported previously. The array design and size relative to the OLED pixel size appear to be responsible for this enhancement. The arrays are fabricated by very economical soft lithography imprinting of a polydimethylsiloxane (PDMS) mold (itself obtained from a Ni master stamp that is generated from holographic interference lithography of a photoresist) on a UV-curable polyurethane drop placed on the glass. Green and blue OLEDs are then fabricated on the ITO to complete the device. When the {mu}LA is {approx}15 x 15 mm{sup 2}, i.e., much larger than the {approx}3 x 3 mm{sup 2} OLED pixel, the electroluminescence (EL) in the forward direction is enhanced by {approx}100%. Similarly, a 19 x 25 mm{sup 2} {mu}LA enhances the EL extracted from a 3 x 3 array of 2 x 2 mm{sup 2} OLED pixels by 96%. Simulations that include the effects of absorption in the organic and ITO layers are in accordance with the experimental results and indicate that a thinner 0.7 mm thick glass would yield a {approx}140% enhancement.

  11. Visualizing Individual Carbon Nanotubes with Optical Microscopy...

    Office of Scientific and Technical Information (OSTI)

    Published Article: Visualizing Individual Carbon Nanotubes with Optical Microscopy Title: Visualizing Individual Carbon Nanotubes with Optical Microscopy Authors: Novak, Michael A. ...

  12. Electron Microscopy Catalysis Projects: Success Stories from...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electron Microscopy Catalysis Projects: Success Stories from the High Temperature Materials Laboratory (HTML) User Program Electron Microscopy Catalysis Projects: Success Stories ...

  13. Reflected beam illumination microscopy using a microfluidics...

    Office of Scientific and Technical Information (OSTI)

    Reflected beam illumination microscopy using a microfluidics device - progress report 6152014. Citation Details In-Document Search Title: Reflected beam illumination microscopy ...

  14. Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

    SciTech Connect (OSTI)

    Nath, A., E-mail: anath@gmu.edu; Rao, M. V. [George Mason University, 4400 University Dr., Fairfax, Virginia 22030 (United States); Koehler, A. D.; Jernigan, G. G.; Wheeler, V. D.; Hite, J. K.; Hernndez, S. C.; Robinson, Z. R.; Myers-Ward, R. L.; Eddy, C. R.; Gaskill, D. K. [U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, D.C. 20375 (United States); Garces, N. Y. [Sotera Defense Solutions, 2200 Defense Hwy. Suite 405, Crofton, Maryland 21114 (United States)

    2014-06-02

    It is well-known that the performance of graphene electronic devices is often limited by extrinsic scattering related to resist residue from transfer, lithography, and other processes. Here, we report a polymer-assisted fabrication procedure that produces a clean graphene surface following device fabrication by a standard lithography process. The effectiveness of this improved lithography process is demonstrated by examining the temperature dependence of epitaxial graphene-metal contact resistance using the transfer length method for Ti/Au (10?nm/50?nm) metallization. The Landauer-Buttiker model was used to explain carrier transport at the graphene-metal interface as a function of temperature. At room temperature, a contact resistance of 140 ?-?m was obtained after a thermal anneal at 523?K for 2?hr under vacuum, which is comparable to state-of-the-art values.

  15. The future of electron microscopy

    SciTech Connect (OSTI)

    Zhu, Yimei; Durr, Hermann

    2015-04-01

    Seeing is believing. So goes the old adage and seen evidence is undoubtedly satisfying because it can be interpreted easily, though not always correctly. For centuries, humans have developed such instruments as telescopes that observe the heavens and microscopes that reveal bacteria and viruses. The 2014 Nobel Prize in Chemistry was awarded to Eric Betzig, Stefan Hell, and William Moerner for their foundational work on superresolution fluorescence microscopy in which they overcame the Abbe diffraction limit for the resolving power of conventional light microscopes. (See Physics Today, December 2014, page 18.) That breakthrough enabled discoveries in biological research and testifies to the importance of modern microscopy.

  16. The future of electron microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yimei; Durr, Hermann

    2015-04-01

    Seeing is believing. So goes the old adage and seen evidence is undoubtedly satisfying because it can be interpreted easily, though not always correctly. For centuries, humans have developed such instruments as telescopes that observe the heavens and microscopes that reveal bacteria and viruses. The 2014 Nobel Prize in Chemistry was awarded to Eric Betzig, Stefan Hell, and William Moerner for their foundational work on superresolution fluorescence microscopy in which they overcame the Abbe diffraction limit for the resolving power of conventional light microscopes. (See Physics Today, December 2014, page 18.) That breakthrough enabled discoveries in biological research and testifiesmore » to the importance of modern microscopy.« less

  17. Exploring Local Electrostatic Effects with Scanning Probe Microscopy: Implications for Piezoresponse Force Microscopy and Triboelectricity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Balke, Nina; Maksymovych, Petro; Jesse, Stephen; Kravchenko, Ivan I.; Li, Qian; Kalinin, Sergei V.

    2014-09-25

    The implementation of contact mode Kelvin probe force microscopy (KPFM) utilizes the electrostatic interactions between tip and sample when the tip and sample are in contact with each other. Surprisingly, the electrostatic forces in contact are large enough to be measured even with tips as stiff as 4.5 N/m. As for traditional non-contact KPFM, the signal depends strongly on electrical properties of the sample, such as the dielectric constant, and the tip-properties, such as the stiffness. Since the tip is in contact with the sample, bias-induced changes in the junction potential between tip and sample can be measured with highermore » lateral and temporal resolution compared to traditional non-contact KPFM. Significant and reproducible variations of tip-surface capacitance are observed and attributed to surface electrochemical phenomena. Lastly, observations of significant surface charge states at zero bias and strong hysteretic electromechanical responses at non-ferroelectric surface have significant implications for fields such as triboelectricity and piezoresponse force microscopy.« less

  18. Window-assisted nanosphere lithography for vacuum micro-nano-electronics

    SciTech Connect (OSTI)

    Li, Nannan; Pang, Shucai; Yan, Fei; Chen, Lei; Jin, Dazhi; Xiang, Wei; Zhang, De; Zeng, Baoqing

    2015-04-15

    Development of vacuum micro-nano-electronics is quite important for combining the advantages of vacuum tubes and solid-state devices but limited by the prevailing fabricating techniques which are expensive, time consuming and low-throughput. In this work, window-assisted nanosphere lithography (NSL) technique was proposed and enabled the low-cost and high-efficiency fabrication of nanostructures for vacuum micro-nano-electronic devices, thus allowing potential applications in many areas. As a demonstration, we fabricated high-density field emitter arrays which can be used as cold cathodes in vacuum micro-nano-electronic devices by using the window-assisted NSL technique. The details of the fabricating process have been investigated. This work provided a new and feasible idea for fabricating nanostructure arrays for vacuum micro-nano-electronic devices, which would spawn the development of vacuum micro-nano-electronics.

  19. Study of nano imprinting using soft lithography on Krafty glue and PVDF polymer thin films

    SciTech Connect (OSTI)

    Sankar, M. S. Ravi, E-mail: rameshg.phy@pondiuni.edu; Gangineni, Ramesh Babu, E-mail: rameshg.phy@pondiuni.edu [Department of Physics, Pondicherry University, R. V. Nagar, Kalapet, Puducherry - 605014 (India)

    2014-04-24

    The present work reveals soft lithography strategy based on self assembly and replica molding for carrying out micro and nanofabrication. It provides a convenient, effective and very low cost method for the formation and manufacturing of micro and nano structures. Al-layer of compact disc (sony CD-R) used as a stamp with patterned relief structures to generate patterns and structures with pattern size of 100nm height, 1.7 ?m wide. In literature, PDMS (Polydimethylsiloxane) solution is widely used to get negative copy of the Al-layer. In this work, we have used inexpensive white glue (Polyvinylacetate + water), 15gm (?5) and PVDF (Polyvinylidene difluoride) spin coated films and successfully transferred the nano patterns of Al layer on to white glue and PVDF films.

  20. Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.

    2004-11-23

    A method is provided for repairing defects in a multilayer coating layered onto a reticle blank used in an extreme ultraviolet lithography (EUVL) system. Using high lateral spatial resolution, energy is deposited in the multilayer coating in the vicinity of the defect. This can be accomplished using a focused electron beam, focused ion beam or a focused electromagnetic radiation. The absorbed energy will cause a structural modification of the film, producing a localized change in the film thickness. The change in film thickness can be controlled with sub-nanometer accuracy by adjusting the energy dose. The lateral spatial resolution of the thickness modification is controlled by the localization of the energy deposition. The film thickness is adjusted locally to correct the perturbation of the reflected field. For example, when the structural modification is a localized film contraction, the repair of a defect consists of flattening a mound or spreading out the sides of a depression.

  1. Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

    DOE Patents [OSTI]

    Sweatt, William C.; Christenson, Todd R.

    2005-04-05

    A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

  2. Combined frequency modulated atomic force microscopy and scanning tunneling microscopy detection for multi-tip scanning probe microscopy applications

    SciTech Connect (OSTI)

    Morawski, Ireneusz; Spiegelberg, Richard; Korte, Stefan; Voigtländer, Bert

    2015-12-15

    A method which allows scanning tunneling microscopy (STM) tip biasing independent of the sample bias during frequency modulated atomic force microscopy (AFM) operation is presented. The AFM sensor is supplied by an electronic circuit combining both a frequency shift signal and a tunneling current signal by means of an inductive coupling. This solution enables a control of the tip potential independent of the sample potential. Individual tip biasing is specifically important in order to implement multi-tip STM/AFM applications. An extensional quartz sensor (needle sensor) with a conductive tip is applied to record simultaneously topography and conductivity of the sample. The high resonance frequency of the needle sensor (1 MHz) allows scanning of a large area of the surface being investigated in a reasonably short time. A recipe for the amplitude calibration which is based only on the frequency shift signal and does not require the tip being in contact is presented. Additionally, we show spectral measurements of the mechanical vibration noise of the scanning system used in the investigations.

  3. SURFACE COATING EFFECTS ON THE ASSEMBLY OF GOLD NANOSPHERES ...

    Office of Scientific and Technical Information (OSTI)

    SILICA; SUBSTRATES; MICROSPHERES; ORGANIC POLYMERS Nanoscale; assembly; tip; nanoparticles; microscopy; total internal reflection; dimer; tribological; shear; surface ...

  4. NREL: Measurements and Characterization - Analytical Microscopy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Analytical Microscopy Analytical microscopy uses various high-resolution techniques to obtain information about materials on the atomic scale. It is one of the most powerful tools available for understanding a material's basic structure, chemistry, and morphology. We use two complementary types of analytical microscopy - electron microscopy and scanning probe microscopy - together with a variety of state-of-the-art imaging and analytical tools to capture data about photovoltaic (PV) materials

  5. Dynamic imaging with electron microscopy

    ScienceCinema (OSTI)

    Campbell, Geoffrey; McKeown, Joe; Santala, Melissa

    2014-05-30

    Livermore researchers have perfected an electron microscope to study fast-evolving material processes and chemical reactions. By applying engineering, microscopy, and laser expertise to the decades-old technology of electron microscopy, the dynamic transmission electron microscope (DTEM) team has developed a technique that can capture images of phenomena that are both very small and very fast. DTEM uses a precisely timed laser pulse to achieve a short but intense electron beam for imaging. When synchronized with a dynamic event in the microscope's field of view, DTEM allows scientists to record and measure material changes in action. A new movie-mode capability, which earned a 2013 R&D 100 Award from R&D Magazine, uses up to nine laser pulses to sequentially capture fast, irreversible, even one-of-a-kind material changes at the nanometer scale. DTEM projects are advancing basic and applied materials research, including such areas as nanostructure growth, phase transformations, and chemical reactions.

  6. Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy

    DOE Patents [OSTI]

    Thomas, Clarence E.; Baylor, Larry R.; Voelkl, Edgar; Simpson, Michael L.; Paulus, Michael J.; Lowndes, Douglas H.; Whealton, John H.; Whitson, John C.; Wilgen, John B.

    2002-12-24

    Systems and methods are described for addressable field emission array (AFEA) chips. A method of operating an addressable field-emission array, includes: generating a plurality of electron beams from a pluralitly of emitters that compose the addressable field-emission array; and focusing at least one of the plurality of electron beams with an on-chip electrostatic focusing stack. The systems and methods provide advantages including the avoidance of space-charge blow-up.

  7. Thermal expansion recovery microscopy: Practical design considerations

    SciTech Connect (OSTI)

    Mingolo, N. Martnez, O. E.

    2014-01-15

    A detailed study of relevant parameters for the design and operation of a photothermal microscope technique recently introduced is presented. The technique, named thermal expansion recovery microscopy (ThERM) relies in the measurement of the defocusing introduced by a surface that expands and recovers upon the heating from a modulated source. A new two lens design is presented that can be easily adapted to commercial infinite conjugate microscopes and the sensitivity to misalignment is analyzed. The way to determine the beam size by means of a focus scan and the use of that same scan to verify if a thermoreflectance signal is overlapping with the desired ThERM mechanism are discussed. Finally, a method to cancel the thermoreflectance signal by an adequate choice of a nanometric coating is presented.

  8. Variable temperature electrochemical strain microscopy of Sm-doped ceria

    SciTech Connect (OSTI)

    Jesse, Stephen; Morozovska, A. N.; Kalinin, Sergei V; Eliseev, E. A.; Yang, Nan; Doria, Sandra; Tebano, Antonello

    2013-01-01

    Variable temperature electrochemical strain microscopy has been used to study the electrochemical activity of Sm-doped ceria as a function of temperature and bias. The electrochemical strain microscopy hysteresis loops have been collected across the surface at different temperatures and the relative activity at different temperatures has been compared. The relaxation behavior of the signal at different temperatures has been also evaluated to relate kinetic process during bias induced electrochemical reactions with temperature and two different kinetic regimes have been identified. The strongly non-monotonic dependence of relaxation behavior on temperature is interpreted as evidence for water-mediated mechanisms.

  9. Visual-servoing optical microscopy

    DOE Patents [OSTI]

    Callahan, Daniel E.; Parvin, Bahram

    2011-05-24

    The present invention provides methods and devices for the knowledge-based discovery and optimization of differences between cell types. In particular, the present invention provides visual servoing optical microscopy, as well as analysis methods. The present invention provides means for the close monitoring of hundreds of individual, living cells over time; quantification of dynamic physiological responses in multiple channels; real-time digital image segmentation and analysis; intelligent, repetitive computer-applied cell stress and cell stimulation; and the ability to return to the same field of cells for long-term studies and observation. The present invention further provides means to optimize culture conditions for specific subpopulations of cells.

  10. Visual-servoing optical microscopy

    DOE Patents [OSTI]

    Callahan, Daniel E; Parvin, Bahram

    2013-10-01

    The present invention provides methods and devices for the knowledge-based discovery and optimization of differences between cell types. In particular, the present invention provides visual servoing optical microscopy, as well as analysis methods. The present invention provides means for the close monitoring of hundreds of individual, living cells over time; quantification of dynamic physiological responses in multiple channels; real-time digital image segmentation and analysis; intelligent, repetitive computer-applied cell stress and cell stimulation; and the ability to return to the same field of cells for long-term studies and observation. The present invention further provides means to optimize culture conditions for specific subpopulations of cells.

  11. Visual-servoing optical microscopy

    DOE Patents [OSTI]

    Callahan, Daniel E.; Parvin, Bahram

    2009-06-09

    The present invention provides methods and devices for the knowledge-based discovery and optimization of differences between cell types. In particular, the present invention provides visual servoing optical microscopy, as well as analysis methods. The present invention provides means for the close monitoring of hundreds of individual, living cells over time: quantification of dynamic physiological responses in multiple channels; real-time digital image segmentation and analysis; intelligent, repetitive computer-applied cell stress and cell stimulation; and the ability to return to the same field of cells for long-term studies and observation. The present invention further provides means to optimize culture conditions for specific subpopulations of cells.

  12. A simplified method for generating periodic nanostructures by interference lithography without the use of an anti-reflection coating

    SciTech Connect (OSTI)

    Kapon, Omree; Muallem, Merav; Palatnik, Alex; Aviv, Hagit; Tischler, Yaakov R.

    2015-11-16

    Interference lithography has proven to be a useful technique for generating periodic sub-diffraction limited nanostructures. Interference lithography can be implemented by exposing a photoresist polymer to laser light using a two-beam arrangement or more simply a one beam configuration based on a Lloyd's Mirror Interferometer. For typical photoresist layers, an anti-reflection coating must be deposited on the substrate to prevent adverse reflections from cancelling the holographic pattern of the interfering beams. For silicon substrates, such coatings are typically multilayered and complex in composition. By thinning the photoresist layer to a thickness well below the quarter wavelength of the exposing beam, we demonstrate that interference gratings can be generated without an anti-reflection coating on the substrate. We used ammonium dichromate doped polyvinyl alcohol as the positive photoresist because it provides excellent pinhole free layers down to thicknesses of 40 nm, and can be cross-linked by a low-cost single mode 457 nm laser, and can be etched in water. Gratings with a period of 320 nm and depth of 4 nm were realized, as well as a variety of morphologies depending on the photoresist thickness. This simplified interference lithography technique promises to be useful for generating periodic nanostructures with high fidelity and minimal substrate treatments.

  13. Combining Quantitative Electrochemistry and Electron Microscopy...

    Office of Scientific and Technical Information (OSTI)

    Conference: Combining Quantitative Electrochemistry and Electron Microscopy to Study ... Resource Relation: Conference: Proposed for presentation at the Materials Research Society ...

  14. Scanning magnetoresistance microscopy of atom chips

    SciTech Connect (OSTI)

    Volk, M.; Whitlock, S.; Wolff, C. H.; Hall, B. V.; Sidorov, A. I.

    2008-02-15

    Surface based geometries of microfabricated wires or patterned magnetic films can be used to magnetically trap and manipulate ultracold neutral atoms or Bose-Einstein condensates. We investigate the magnetic properties of such atom chips using a scanning magnetoresistive (MR) microscope with high spatial resolution and high field sensitivity. By comparing MR scans of a permanent magnetic atom chip to field profiles obtained using ultracold atoms, we show that MR sensors are ideally suited to observe small variations of the magnetic field caused by imperfections in the wires or magnetic materials which ultimately lead to fragmentation of ultracold atom clouds. Measurements are also provided for the magnetic field produced by a thin current-carrying wire with small geometric modulations along the edge. Comparisons of our measurements with a full numeric calculation of the current flow in the wire and the subsequent magnetic field show excellent agreement. Our results highlight the use of scanning MR microscopy as a convenient and powerful technique for precisely characterizing the magnetic fields produced near the surface of atom chips.

  15. Full information acquisition in piezoresponse force microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Somnath, Suhas; Belianinov, Alex; Jesse, Stephen; Kalinin, Sergei V.

    2015-12-28

    The information flow from the tip-surface junction to the detector electronics during the piezoresponse force microscopy (PFM) imaging is explored using the recently developed general mode (G-mode) detection. Information-theory analysis suggests that G-mode PFM in the non-switching regime, close to the first resonance mode, contains a relatively small (100 - 150) number of components containing significant information. The first two primary components are similar to classical PFM images, suggesting that classical lock-in detection schemes provide high veracity information in this case. At the same time, a number of transient components exhibit contrast associated with surface topography, suggesting pathway to separatemore » the two. The number of significant components increases considerably in the non-linear and switching regimes and approaching to cantilever resonances, precluding the use of classical lock-in detection and necessitating the use of band excitation or G-mode detection schemes. As a result, the future prospects of full information imaging in SPM are discussed.« less

  16. Complete information acquisition in scanning probe microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Belianinov, Alex; Kalinin, Sergei V.; Jesse, Stephen

    2015-03-13

    In the last three decades, scanning probe microscopy (SPM) has emerged as a primary tool for exploring and controlling the nanoworld. A critical part of the SPM measurements is the information transfer from the tip-surface junction to a macroscopic measurement system. This process reduces the many degrees of freedom of a vibrating cantilever to relatively few parameters recorded as images. Similarly, the details of dynamic cantilever response at sub-microsecond time scales of transients, higher-order eigenmodes and harmonics are averaged out by transitioning to millisecond time scale of pixel acquisition. Hence, the amount of information available to the external observer ismore » severely limited, and its selection is biased by the chosen data processing method. Here, we report a fundamentally new approach for SPM imaging based on information theory-type analysis of the data stream from the detector. This approach allows full exploration of complex tip-surface interactions, spatial mapping of multidimensional variability of material s properties and their mutual interactions, and SPM imaging at the information channel capacity limit.« less

  17. Full information acquisition in piezoresponse force microscopy

    SciTech Connect (OSTI)

    Somnath, Suhas; Belianinov, Alex; Jesse, Stephen; Kalinin, Sergei V.

    2015-12-28

    The information flow from the tip-surface junction to the detector electronics during the piezoresponse force microscopy (PFM) imaging is explored using the recently developed general mode (G-mode) detection. Information-theory analysis suggests that G-mode PFM in the non-switching regime, close to the first resonance mode, contains a relatively small (100 - 150) number of components containing significant information. The first two primary components are similar to classical PFM images, suggesting that classical lock-in detection schemes provide high veracity information in this case. At the same time, a number of transient components exhibit contrast associated with surface topography, suggesting pathway to separate the two. The number of significant components increases considerably in the non-linear and switching regimes and approaching to cantilever resonances, precluding the use of classical lock-in detection and necessitating the use of band excitation or G-mode detection schemes. As a result, the future prospects of full information imaging in SPM are discussed.

  18. Complete information acquisition in scanning probe microscopy

    SciTech Connect (OSTI)

    Belianinov, Alex; Kalinin, Sergei V; Jesse, Stephen

    2015-01-01

    In the last three decades, scanning probe microscopy (SPM) has emerged as a primary tool for exploring and controlling the nanoworld. A critical part of the SPM measurements is the information transfer from the tip-surface junction to a macroscopic measurement system. This process reduces the many degrees of freedom of a vibrating cantilever to relatively few parameters recorded as images. Similarly, the details of dynamic cantilever response at sub-microsecond time scales of transients, higher-order eigenmodes and harmonics are averaged out by transitioning to millisecond time scale of pixel acquisition. Hence, the amount of information available to the external observer is severely limited, and its selection is biased by the chosen data processing method. Here, we report a fundamentally new approach for SPM imaging based on information theory-type analysis of the data stream from the detector. This approach allows full exploration of complex tip-surface interactions, spatial mapping of multidimensional variability of material s properties and their mutual interactions, and SPM imaging at the information channel capacity limit.

  19. Kelvin Probe Force Microscopy in liquid using Electrochemical Force Microscopy

    SciTech Connect (OSTI)

    Collins, Liam; Jesse, Stephen; Kilpatrick, J.; Tselev, Alexander; Okatan, Mahmut Baris; Kalinin, Sergei V.; Rodriguez, Brian

    2015-01-01

    Conventional closed loop-Kelvin probe force microscopy (KPFM) has emerged as a powerful technique for probing electric and transport phenomena at the solid-gas interface. The extension of KPFM capabilities to probe electrostatic and electrochemical phenomena at the solid–liquid interface is of interest for a broad range of applications from energy storage to biological systems. However, the operation of KPFM implicitly relies on the presence of a linear lossless dielectric in the probe-sample gap, a condition which is violated for ionically-active liquids (e.g., when diffuse charge dynamics are present). Here, electrostatic and electrochemical measurements are demonstrated in ionically-active (polar isopropanol, milli-Q water and aqueous NaCl) and ionically-inactive (non-polar decane) liquids by electrochemical force microscopy (EcFM), a multidimensional (i.e., bias- and time-resolved) spectroscopy method. In the absence of mobile charges (ambient and non-polar liquids), KPFM and EcFM are both feasible, yielding comparable contact potential difference (CPD) values. In ionically-active liquids, KPFM is not possible and EcFM can be used to measure the dynamic CPD and a rich spectrum of information pertaining to charge screening, ion diffusion, and electrochemical processes (e.g., Faradaic reactions). EcFM measurements conducted in isopropanol and milli-Q water over Au and highly ordered pyrolytic graphite electrodes demonstrate both sample- and solvent-dependent features. Finally, the feasibility of using EcFM as a local force-based mapping technique of material-dependent electrostatic and electrochemical response is investigated. The resultant high dimensional dataset is visualized using a purely statistical approach that does not require a priori physical models, allowing for qualitative mapping of electrostatic and electrochemical material properties at the solid–liquid interface.

  20. Kelvin Probe Force Microscopy in liquid using Electrochemical Force Microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Collins, Liam; Jesse, Stephen; Kilpatrick, J.; Tselev, Alexander; Okatan, Mahmut Baris; Kalinin, Sergei V.; Rodriguez, Brian

    2015-01-01

    Conventional closed loop-Kelvin probe force microscopy (KPFM) has emerged as a powerful technique for probing electric and transport phenomena at the solid-gas interface. The extension of KPFM capabilities to probe electrostatic and electrochemical phenomena at the solid–liquid interface is of interest for a broad range of applications from energy storage to biological systems. However, the operation of KPFM implicitly relies on the presence of a linear lossless dielectric in the probe-sample gap, a condition which is violated for ionically-active liquids (e.g., when diffuse charge dynamics are present). Here, electrostatic and electrochemical measurements are demonstrated in ionically-active (polar isopropanol, milli-Q watermore » and aqueous NaCl) and ionically-inactive (non-polar decane) liquids by electrochemical force microscopy (EcFM), a multidimensional (i.e., bias- and time-resolved) spectroscopy method. In the absence of mobile charges (ambient and non-polar liquids), KPFM and EcFM are both feasible, yielding comparable contact potential difference (CPD) values. In ionically-active liquids, KPFM is not possible and EcFM can be used to measure the dynamic CPD and a rich spectrum of information pertaining to charge screening, ion diffusion, and electrochemical processes (e.g., Faradaic reactions). EcFM measurements conducted in isopropanol and milli-Q water over Au and highly ordered pyrolytic graphite electrodes demonstrate both sample- and solvent-dependent features. Finally, the feasibility of using EcFM as a local force-based mapping technique of material-dependent electrostatic and electrochemical response is investigated. The resultant high dimensional dataset is visualized using a purely statistical approach that does not require a priori physical models, allowing for qualitative mapping of electrostatic and electrochemical material properties at the solid–liquid interface.« less

  1. A Molecular- and Nano-Electronics Test (MONET) platform fabricated using extreme ultraviolet lithography.

    SciTech Connect (OSTI)

    Dentinger, Paul M.; Cardinale, Gregory F.; Hunter, Luke L.; Talin, Albert Alec

    2003-12-01

    We describe the fabrication and characterization of an electrode array test structure, designed for electrical probing of molecules and nanocrystals. We use Extreme Ultraviolet Lithography (EUVL) to define the electrical test platform features. As fabricated, the platform includes nominal electrode gaps of 0 nm, 40 nm, 60 nm, and 80 nm. Additional variation in electrode gap is achieved by controlling the exposure conditions, such as dose and focus. To enable EUVL based nanofabrication, we develop a novel bi-level photoresist process. The bi-level photoresist consists of a combination of a commercially available polydimethylglutarimide (PMGI) bottom layer and an experimental EUVL photoresist top (imaging) layer. We measure the sensitivity of PMGI to EUV exposure dose as a function of photoresist pre-bake temperature, and using this data, optimize a metal lift-off process. Reliable fabrication of 700 Angstrom thick Au structures with sub-1000 Angstrom critical dimensions is achieved, even without the use of a Au adhesion layer, such as Ti. Several test platforms are used to characterize electrical properties of organic molecules deposited as self assembled monolayers.

  2. Electrostrictive and electrostatic responses in contact mode voltage modulated Scanning Probe Microscopies

    SciTech Connect (OSTI)

    Eliseev, E. A.; Morozovska, A. N.; Ievlev, Anton; Balke, Nina; Maksymovych, Petro; Tselev, Alexander; Kalinin, Sergei V

    2014-01-01

    Electromechanical response of solids underpins image formation mechanism of several scanning probe microscopy techniques including the piezoresponse force microscopy (PFM) and electrochemical strain microscopy (ESM). While the theory of linear piezoelectric and ionic responses are well developed, the contributions of quadratic effects including electrostriction and capacitive tip-surface forces to measured signal remain poorly understood. Here we analyze the electrostrictive and capacitive contributions to the PFM and ESM signals and discuss the implications of the dielectric tip-surface gap on these interactions.

  3. Scanning probe microscopy competency development

    SciTech Connect (OSTI)

    Hawley, M.E.; Reagor, D.W.; Jia, Quan Xi

    1998-12-31

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The project collaborators developed an ultra-high vacuum scanning tunneling microscope (UHV-STM) capability, integrated it with existing scanning probe microscopes, and developed new, advanced air-based scanning force techniques (SPMs). Programmatic, basic, and industrially related laboratory research requires the existence of SPMs, as well as expertise capable of providing local nano-scale information. The UHV-STM capability, equipped with load-lock system and several surface science techniques, will allow introduction, examination, and reaction of surfaces prepared under well-controlled vacuum conditions, including the examination of morphology and local bonding associated with the initial stages of film growth under controlled growth conditions. The resulting capabilities will enable the authors to respond to a variety of problems requiring local characterization of conducting and nonconducting surfaces in liquids, air, and UHV.

  4. Band Excitation Method Applicable to Scanning Probe Microscopy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    force microscopy, atomic force acoustic microscopy, and piezoresponse force microscopy. It is relevant to all SPM manufacturers and can yield data about a sample's electrical, ...

  5. Record-Setting Microscopy Illuminates Energy Storage Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Record-Setting Microscopy Illuminates Energy Storage Materials Record-Setting Microscopy Illuminates Energy Storage Materials Print Thursday, 22 January 2015 12:10 X-ray microscopy...

  6. NREL: Measurements and Characterization - Scanning Electron Microscopy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electron Microscopy Researcher using field-emission scanning electron microscope. Field emission scanning electron microscope (FE-SEM) JEOL 6320F. This FE-SEM equipped with a cold field-emission source and in-lens detectors is designed for ultra-high resolution at low accelerating voltage. Compositional mapping by energy-dispersive microscopy and Electron Backscattered Diffraction are available. In basic scanning electron microscopy (SEM), a beam of highly energetic (0.1-50 keV) electrons is

  7. Electron Microscopy Center | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electron Microscopy Center Electron Microscopy Center The Electron Microscopy Center Group (EMC) develops and maintains unique capabilities for electron beam characterization and applies those capabilities to solve materials challenges. EMC emphasizes three major areas: materials research, experimental technique and instrumentation development, and operation of unique and state-of-the-art instrumentation. The goals of EMC materials research are closely aligned with those of our user community.

  8. Radiation-thermoacoustic microscopy of condensed media

    SciTech Connect (OSTI)

    Lyamshev, L.M.; Chelnokov, B.I.

    1984-07-01

    Possibilities are discussed for the application of scanning radiation-thermoacoustic microscopy, using different types of radiation, for microstructure analysis. (AIP)

  9. Reflected beam illumination microscopy using a microfluidics...

    Office of Scientific and Technical Information (OSTI)

    using a microfluidics device - progress report 6152014. Citation Details In-Document Search Title: Reflected beam illumination microscopy using a microfluidics device - ...

  10. Microscopy (XSD-MIC) | Advanced Photon Source

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    microdiffraction, fluorescence tomography, coherent diffraction, and synchrotron x-ray scanning tunneling microscopy (SX-STM) This website is intended to provide useful...

  11. Piezoresponse Force Microscopy: A Window into Electromechanical...

    Office of Scientific and Technical Information (OSTI)

    Behavior at the Nanoscale Citation Details In-Document Search Title: Piezoresponse Force Microscopy: A Window into Electromechanical Behavior at the Nanoscale Authors: Bonnell, ...

  12. X-Ray Microscopy | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    X-Ray Microscopy X-Ray Microscopy This group exploits the unique capabilities of hard X-ray microscopy to visualize and understand the structure and behavior of hybrid, energy-related, and tailored nanomaterials The Hard X-Ray Nanoprobe, located at Sector 26 of the Advanced Photon Source (APS) and operated by our group and APS, is the only dedicated X-ray microscopy beamline within the portfolios of the nation's Nanoscale Science Research Centers. Our scientific program seeks to understand

  13. X-ray microscopy. Beyond ensemble averages

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ice, Gene E.; Budai, John D.

    2015-06-23

    This work exemplifies emerging tools to characterize local materials structure and dynamics, made possible by powerful X-ray synchrotron and transmission electron microscopy methods.

  14. Variable temperature electrochemical strain microscopy of Sm...

    Office of Scientific and Technical Information (OSTI)

    Sponsoring Org: SC USDOE - Office of Science (SC) Country of Publication: United States Language: English Subject: Solid-oxide fuel cells (SOFC); Electrochemical Strain Microscopy ...

  15. Scientific Achievement Analytical Transmission Electron Microscopy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Analytical Transmission Electron Microscopy (TEM) method was developed to determine thickness and wrinkles in electron beam sensitive 2-dimensional (2D) MFI nanosheets....

  16. Amplified spontaneous emission in active channel waveguides produced by electron-beam lithography in LiF crystals

    SciTech Connect (OSTI)

    Montereali, R. M.; Piccinini, M.; Burattini, E.

    2001-06-25

    In this letter we report the observation of amplified spontaneous emission of the red light from LiF:F{sub 2} centers in active channel waveguides realized by electron-beam lithography in lithium fluoride crystals. Low pumping power densities have been used in quasi-continuous-wave regime at room temperature; the appreciable values of the gain coefficients, 4.67 cm{minus}1 with an exciting power density of 0.31 W/cm2 at 458 nm, make this material a good candidate for the realization of active integrated optical devices. {copyright} 2001 American Institute of Physics.

  17. Microscopy & microanalysis 2016 in Columbus, Ohio

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Michael, Joseph R.

    2016-01-08

    The article provides information about an upcoming conference from the program chair. The Microscopy Society of America (MSA), the Microanalysis Society (MAS), and the International Metallographic Society (IMS) invite participation in Microscopy & Microanalysis 2016 in Columbus, Ohio, July 24 through July 28, 2016.

  18. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    SciTech Connect (OSTI)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides.

  19. Demonstration of electronic pattern switching and 10x pattern demagnification in a maskless micro-ion beam reduction lithography system

    SciTech Connect (OSTI)

    Ngo, V.V.; Akker, B.; Leung, K.N.; Noh, I.; Scott, K.L.; Wilde, S.

    2002-05-31

    A proof-of-principle ion projection lithography (IPL) system called Maskless Micro-ion beam Reduction Lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory (LBNL) for future integrated circuits (ICs) manufacturing and thin film media patterning [1]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [2] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp RF plasma generator, a multi-beamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on PMMA and Shipley UVII-HS resists using 75 keV H+ are presented in this paper. Proof-of-principle electronic pattern switching together with 10x reduction ion optics (using a pattern generator made of nine 50-{micro}m switchable apertures) has been performed and is reported in this paper. In addition, the fabrication of a micro-fabricated pattern generator [3] on an SOI membrane is also presented.

  20. Microscopy with slow electrons: from LEEM to XPEEM

    ScienceCinema (OSTI)

    Bauer, Ernst [Arizona State University, Phoenix, Arizona, United States

    2010-01-08

    The short penetration and escape depth of electrons with energies below 1 keV make them ideally suited for the study of surfaces and ultrathin films. The combination of the low energy electrons and the high lateral resolution of a microscope produces a powerful method for the characterization of nanostructures on bulk samples, in particular if the microscope is equipped with an imaging energy filter and connected to a synchrotron radiation source. Comprehensive characterization by imaging, diffraction, and spectroscope of the structural, chemical, and magnetic properties is then possible. The Talk will describe the various imaging techniques in using reflected and emitted electrons in low-energy electron microscopy (LEEM) and x-ray photoemission electron microscopy (XPEEM), with an emphasis on magnetic materials with spin-polarized LEEM and x-ray magnetic circular dichroism PEEM. The talk with end with an outlook on future possibilities.

  1. Tuning the interaction between propagating and localized surface plasmons for surface enhanced Raman scattering in water for biomedical and environmental applications

    SciTech Connect (OSTI)

    Shioi, Masahiko; Jans, Hilde; Lodewijks, Kristof; Van Dorpe, Pol; Lagae, Liesbet; Kawamura, Tatsuro

    2014-06-16

    With a view to biomedical and environmental applications, we investigate the plasmonic properties of a rectangular gold nanodisk array in water to boost surface enhanced Raman scattering (SERS) effects. To control the resonance wavelengths of the surface plasmon polariton and the localized surface plasmon, their dependence on the array period and diameter in water is studied in detail using a finite difference time domain method. A good agreement is obtained between calculated resonant wavelengths and those of gold nanodisk arrays fabricated using electron beam lithography. For the optimized structure, a SERS enhancement factor of 7.8 × 10{sup 7} is achieved in water experimentally.

  2. New Microscopy Patent Awarded | The Ames Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Microscopy Patent Awarded Congratulations to former Ames Laboratory staff Ning Fang and Wei Sun for being awarded a new patent, "Auto-calibrated scanning-angle prism-type total...

  3. Ultrafast Optical Microscopy of Single Monolayer Molybdenum Disulfide Flakes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Seo, Minah; Yamaguchi, Hisato; Mohite, Aditya D.; Boubanga-Tombet, Stephane; Blancon, Jean-Christophe; Najmaei, Sina; Ajayan, Pulickel M.; Lou, Jun; Taylor, Antoinette J.; Prasankumar, Rohit P.

    2016-02-15

    We performed ultrafast optical microscopy on single flakes of atomically thin CVD-grown molybdenum disulfide, using non-degenerate femtosecond pump-probe spectroscopy to excite and probe carriers above and below the indirect and direct band gaps. These measurements reveal the influence of layer thickness on carrier dynamics when probing near the band gap. Furthermore, fluence-dependent measurements indicate that carrier relaxation is primarily influenced by surface-related defect and trap states after above-bandgap photoexcitation. Furthermore, the ability to probe femtosecond carrier dynamics in individual flakes can thus give much insight into light-matter interactions in these two-dimensional nanosystems.

  4. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

    SciTech Connect (OSTI)

    Jha, Smita; Liu, C.-C.; Nealey, P. F.; Kuech, T. F.; Kuan, T. S.; Babcock, S. E.; Park, J. H.; Mawst, L. J.

    2009-08-10

    Defect reduction in the large lattice mismatched system of GaSb on GaAs, {approx}7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of {approx}20 nm holes on {approx}40 nm centers in a 20 nm SiO{sub 2} layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO{sub 2} layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.

  5. Biomass Surface Characterization Laboratory (Fact Sheet), NREL...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    microscopy and Raman microscopy * Transmission electron microscopy and tomography * Scanning electron microscopy and energy dispersive spectroscopy * Atomic force microscopy. ...

  6. Surface-Plasmon Enhanced Transparent Electrodes in Organic Photovoltaics

    SciTech Connect (OSTI)

    Reilly III, T. H.; van de Lagemaat, J.; Tenent, R. C.; Morfa, A. J.; Rowlen, K. L.

    2008-01-01

    Random silver nanohole films were created through colloidal lithography techniques and metal vapor deposition. The transparent electrodes were characterized by uv-visible spectroscopy and incorporated into an organic solar cell. The test cells were evaluated for solar power-conversion efficiency and incident photon-to-current conversion efficiency. The incident photon-to-current conversion efficiency spectra displayed evidence that a nanohole film with 92 nm diameter holes induces surface-plasmon-enhanced photoconversion. The nanohole silver films demonstrate a promising route to removing the indium tin oxide transparent electrode that is ubiquitous in organic optoelectronics.

  7. Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

    DOE Patents [OSTI]

    Kalinin, Sergei V.; Baddorf, Arthur P.; Lee, Ho Nyung; Shin, Junsoo; Gruverman, Alexei L.; Karapetian, Edgar; Kachanov, Mark

    2007-11-06

    A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

  8. Seeing through walls at the nanoscale: Microwave microscopy of...

    Office of Scientific and Technical Information (OSTI)

    Seeing through walls at the nanoscale: Microwave microscopy of enclosed objects and ... Title: Seeing through walls at the nanoscale: Microwave microscopy of enclosed objects and ...

  9. Ultra-High Resolution Electron Microscopy for Catalyst Characterizatio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    High Resolution Electron Microscopy for Catalyst Characterization Ultra-High Resolution Electron Microscopy for Catalyst Characterization 2011 DOE Hydrogen and Fuel Cells Program, ...

  10. Ultra-high Resolution Electron Microscopy for Catalyst Characterizatio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    high Resolution Electron Microscopy for Catalyst Characterization Ultra-high Resolution Electron Microscopy for Catalyst Characterization 2009 DOE Hydrogen Program and Vehicle ...

  11. In-Situ Electron Microscopy of Electrical Energy Storage Materials...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications In-Situ Electron Microscopy of Electrical Energy Storage Materials In-Situ Electron Microscopy of Electrical Energy Storage Materials Investigations ...

  12. In-Situ Electron Microscopy of Electrical Energy Storage Materials...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications In-Situ Electron Microscopy of Electrical Energy Storage Materials In-Situ Electron Microscopy of Electrical Energy Storage Materials In-situ ...

  13. High-Resolution Photocurrent Microscopy Using Near-FieldCathodolumine...

    Office of Scientific and Technical Information (OSTI)

    High-Resolution Photocurrent Microscopy Using Near-Field Cathodoluminescence of Quantum Dots. Citation Details In-Document Search Title: High-Resolution Photocurrent Microscopy ...

  14. In Situ Transmission Electron Microscopy. (Conference) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    In Situ Transmission Electron Microscopy. Citation Details In-Document Search Title: In Situ Transmission Electron Microscopy. Abstract not provided. Authors: Jungjohann, Katherine ...

  15. Record-Setting Microscopy Illuminates Energy Storage Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Record-Setting Microscopy Illuminates Energy Storage Materials Print X-ray microscopy is ... removed the resolution limit imposed by the characteristics of the x-ray optics. ...

  16. Subangstrom Edge Relaxations Probed by Electron Microscopy in...

    Office of Scientific and Technical Information (OSTI)

    Subangstrom Edge Relaxations Probed by Electron Microscopy in Hexagonal Boron Nitride Title: Subangstrom Edge Relaxations Probed by Electron Microscopy in Hexagonal Boron Nitride ...

  17. Ultra-High Resolution Electron Microscopy for Catalyst Characterizatio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    pm029allard2010p.pdf More Documents & Publications Ultra-High Resolution Electron Microscopy for Catalyst Characterization Ultra-high Resolution Electron Microscopy for Catalyst...

  18. Orientation imaging microscopy of polycrystalline sodium chloride

    SciTech Connect (OSTI)

    Staiger, M.P.; Kolbeinsson, I.; Newman, J.; Woodfield, T.; Sato, T.

    2010-04-15

    A novel preparation technique is described that makes possible grain size analysis of polycrystalline NaCl using orientation imaging microscopy via electron backscatter diffraction (EBSD). The preparation methodology is specifically developed to overcome difficulties in preparing microporous NaCl for microscopy. The grain size and crystallographic texture of polycrystalline NaCl samples, prepared via solution pressure and sintered in the range of 650-780 deg. C, were able to be measured successfully with EBSD. The limitations of the preparation technique for EBSD analysis of NaCl are also discussed.

  19. Fidelity imaging for atomic force microscopy

    SciTech Connect (OSTI)

    Ghosal, Sayan Salapaka, Murti

    2015-01-05

    Atomic force microscopy is widely employed for imaging material at the nanoscale. However, real-time measures on image reliability are lacking in contemporary atomic force microscopy literature. In this article, we present a real-time technique that provides an image of fidelity for a high bandwidth dynamic mode imaging scheme. The fidelity images define channels that allow the user to have additional authority over the choice of decision threshold that facilitates where the emphasis is desired, on discovering most true features on the sample with the possible detection of high number of false features, or emphasizing minimizing instances of false detections. Simulation and experimental results demonstrate the effectiveness of fidelity imaging.

  20. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell; Shafer, David R.

    2001-01-01

    An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first convex mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receive a chief ray at an incidence angle of less than substantially 9.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 14.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than substantially 16 .mu.m.

  1. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell

    2000-01-01

    An all-refelctive optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six refelecting surfaces has an aspheric departure of less than 16.0 .mu.m.

  2. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell

    2001-01-01

    An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than 16.0 .mu.m.

  3. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell; Shafer, David

    2001-01-01

    An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first convex mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 9.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 14.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than substantially 16 .mu.m.

  4. Environmental cell assembly for use in for use in spectroscopy and microscopy applications

    DOE Patents [OSTI]

    Stowe, Ashley Clinton; Smyrl, Norman; Hallman, Jr., Russell L.

    2014-09-02

    An environmental cell assembly for use in microscopy and spectroscopy applications, including: an environmentally sealed body assembly configured to selectively hold and contain a sample; a plurality of ports manufactured into one or more surfaces of the body assembly for one or more of evacuating the body assembly and injecting a gas into or removing a gas from the body assembly; a port manufactured into a surface of the body assembly for receiving a translating stage configured to move the sample within the body assembly; and a port manufactured into a surface of the body assembly for receiving one or more lenses utilized in a microscopy or spectroscopy application; wherein the one or more lenses are disposed adjacent the sample without intervening structures disposed there between. The cell assembly also includes a port manufactured into a surface of the body assembly for retaining a window and providing visualization of the sample.

  5. Frontiers of in situ electron microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zheng, Haimei; Zhu, Yimei; Meng, Shirley Ying

    2015-01-01

    In situ transmission electron microscopy (TEM) has become an increasingly important tool for materials characterization. It provides key information on the structural dynamics of a material during transformations and the correlation between structure and properties of materials. With the recent advances in instrumentation, including aberration corrected optics, sample environment control, the sample stage, and fast and sensitive data acquisition, in situ TEM characterization has become more and more powerful. In this article, a brief review of the current status and future opportunities of in situ TEM is included. It also provides an introduction to the six articles covered by inmore » this issue of MRS Bulletin explore the frontiers of in situ electron microscopy, including liquid and gas environmental TEM, dynamic four-dimensional TEM, nanomechanics, ferroelectric domain switching studied by in situ TEM, and state-of-the-art atomic imaging of light elements (i.e., carbon atoms) and individual defects.« less

  6. Impact of polymer film thickness and cavity size on polymer flow during embossing : towards process design rules for nanoimprint lithography.

    SciTech Connect (OSTI)

    Schunk, Peter Randall; King, William P. (Georgia Institute of Technology, Atlanta, GA); Sun, Amy Cha-Tien; Rowland, Harry D.

    2006-08-01

    This paper presents continuum simulations of polymer flow during nanoimprint lithography (NIL). The simulations capture the underlying physics of polymer flow from the nanometer to millimeter length scale and examine geometry and thermophysical process quantities affecting cavity filling. Variations in embossing tool geometry and polymer film thickness during viscous flow distinguish different flow driving mechanisms. Three parameters can predict polymer deformation mode: cavity width to polymer thickness ratio, polymer supply ratio, and Capillary number. The ratio of cavity width to initial polymer film thickness determines vertically or laterally dominant deformation. The ratio of indenter width to residual film thickness measures polymer supply beneath the indenter which determines Stokes or squeeze flow. The local geometry ratios can predict a fill time based on laminar flow between plates, Stokes flow, or squeeze flow. Characteristic NIL capillary number based on geometry-dependent fill time distinguishes between capillary or viscous driven flows. The three parameters predict filling modes observed in published studies of NIL deformation over nanometer to millimeter length scales. The work seeks to establish process design rules for NIL and to provide tools for the rational design of NIL master templates, resist polymers, and process parameters.

  7. Calibration of fluorescence resonance energy transfer in microscopy

    DOE Patents [OSTI]

    Youvan, Dougalas C.; Silva, Christopher M.; Bylina, Edward J.; Coleman, William J.; Dilworth, Michael R.; Yang, Mary M.

    2003-12-09

    Imaging hardware, software, calibrants, and methods are provided to visualize and quantitate the amount of Fluorescence Resonance Energy Transfer (FRET) occurring between donor and acceptor molecules in epifluorescence microscopy. The MicroFRET system compensates for overlap among donor, acceptor, and FRET spectra using well characterized fluorescent beads as standards in conjunction with radiometrically calibrated image processing techniques. The MicroFRET system also provides precisely machined epifluorescence cubes to maintain proper image registration as the sample is illuminated at the donor and acceptor excitation wavelengths. Algorithms are described that pseudocolor the image to display pixels exhibiting radiometrically-corrected fluorescence emission from the donor (blue), the acceptor (green) and FRET (red). The method is demonstrated on samples exhibiting FRET between genetically engineered derivatives of the Green Fluorescent Protein (GFP) bound to the surface of Ni chelating beads by histidine-tags.

  8. Calibration of fluorescence resonance energy transfer in microscopy

    DOE Patents [OSTI]

    Youvan, Douglas C.; Silva, Christopher M.; Bylina, Edward J.; Coleman, William J.; Dilworth, Michael R.; Yang, Mary M.

    2002-09-24

    Imaging hardware, software, calibrants, and methods are provided to visualize and quantitate the amount of Fluorescence Resonance Energy Transfer (FRET) occurring between donor and acceptor molecules in epifluorescence microscopy. The MicroFRET system compensates for overlap among donor, acceptor, and FRET spectra using well characterized fluorescent beads as standards in conjunction with radiometrically calibrated image processing techniques. The MicroFRET system also provides precisely machined epifluorescence cubes to maintain proper image registration as the sample is illuminated at the donor and acceptor excitation wavelengths. Algorithms are described that pseudocolor the image to display pixels exhibiting radiometrically-corrected fluorescence emission from the donor (blue), the acceptor (green) and FRET (red). The method is demonstrated on samples exhibiting FRET between genetically engineered derivatives of the Green Fluorescent Protein (GFP) bound to the surface of Ni chelating beads by histidine-tags.

  9. Electron microscopy of Mg/TiO{sub 2} photocatalyst morphology for deep desulfurization of diesel

    SciTech Connect (OSTI)

    Yin, Yee Cia; Kait, Chong Fai Fatimah, Hayyiratul Wilfred, Cecilia

    2015-07-22

    A series of Mg/TiO{sub 2} photocatalysts were prepared and characterized using Field Emission Scanning Electron Microscopy (FESEM) and High-Resolution Transmission Electron Microscopy (HRTEM). The average particle sizes of the photocatalysts were ranging from 25.7 to 35.8 nm. Incorporation of Mg on TiO{sub 2} did not lead to any surface lattice distortion to TiO{sub 2}. HRTEM data indicated the presence of MgO and Mg(OH){sub 2} mixture at low Mg loading while at higher Mg loading, the presence of lamellar Mg-oxyhydroxide intermediates and Mg(OH){sub 2}.

  10. Multifrequency imaging in the intermittent contact mode of atomic force microscopy: beyond phase imaging

    SciTech Connect (OSTI)

    Guo, Senli; Santiago, Solares D; Mochalin, Vadym; Neitzel, Ioannis; Gogotsi, Yury G.; Kalinin, Sergei V; Jesse, Stephen

    2012-01-01

    Force-based scanning probe microscopies have emerged as a mainstay for probing structural and mechanical properties of materials on the nanometer and molecular scales. Despite tremendous progress achieved to date, the cantilever dynamics in single frequency scanning probe microscopies (SPM) is undefined due to having only two output variables. Here we demonstrate on diamond nanoparticles with different functionalization layers that the use of broad band detection by multiple frequency SPM allows complete information on tip-surface interactions in intermittent contact SPM to be acquired. The obtained data allows sub-3nm resolution even in ambient environment. By tuning the strength of tip-surface interaction, the information on surface state can be obtained.

  11. Low temperature laser scanning microscopy of a superconducting radio-frequency cavity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ciovati, G.; Anlage, Steven M.; Baldwin, C.; Cheng, G.; Flood, R.; Jordan, K.; Kneisel, P.; Morrone, M.; Nemes, G.; Turlington, L.; et al

    2012-03-16

    An apparatus was created to obtain, for the first time, 2D maps of the surface resistance of the inner surface of an operating superconducting radio-frequency niobium cavity by a low-temperature laser scanning microscopy technique. This allows identifying non-uniformities of the surface resistance with a spatial resolution of about one order of magnitude better than with earlier methods. A signal-to-noise ratio of about 10 dB was obtained with 240 mW laser power and 1 Hz modulation frequency. The various components of the apparatus, the experimental procedure and results are discussed in details in this contribution.

  12. Spatially resolved quantitative mapping of thermomechanical properties and phase transition temperatures using scanning probe microscopy

    DOE Patents [OSTI]

    Jesse, Stephen; Kalinin, Sergei V; Nikiforov, Maxim P

    2013-07-09

    An approach for the thermomechanical characterization of phase transitions in polymeric materials (polyethyleneterephthalate) by band excitation acoustic force microscopy is developed. This methodology allows the independent measurement of resonance frequency, Q factor, and oscillation amplitude of a tip-surface contact area as a function of tip temperature, from which the thermal evolution of tip-surface spring constant and mechanical dissipation can be extracted. A heating protocol maintained a constant tip-surface contact area and constant contact force, thereby allowing for reproducible measurements and quantitative extraction of material properties including temperature dependence of indentation-based elastic and loss moduli.

  13. Surface figure control for coated optics

    DOE Patents [OSTI]

    Ray-Chaudhuri, Avijit K.; Spence, Paul A.; Kanouff, Michael P.

    2001-01-01

    A pedestal optical substrate that simultaneously provides high substrate dynamic stiffness, provides low surface figure sensitivity to mechanical mounting hardware inputs, and constrains surface figure changes caused by optical coatings to be primarily spherical in nature. The pedestal optical substrate includes a disk-like optic or substrate section having a top surface that is coated, a disk-like base section that provides location at which the substrate can be mounted, and a connecting cylindrical section between the base and optics or substrate sections. The optic section has an optical section thickness.sup.2 /optical section diameter ratio of between about 5 to 10 mm, and a thickness variation between front and back surfaces of less than about 10%. The connecting cylindrical section may be attached via three spaced legs or members. However, the pedestal optical substrate can be manufactured from a solid piece of material to form a monolith, thus avoiding joints between the sections, or the disk-like base can be formed separately and connected to the connecting section. By way of example, the pedestal optical substrate may be utilized in the fabrication of optics for an extreme ultraviolet (EUV) lithography imaging system, or in any optical system requiring coated optics and substrates with reduced sensitivity to mechanical mounts.

  14. Electron Microscopy Center Capabilities | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electron Microscopy Center Capabilities ACAT: Argonne Chromatic Aberration-corrected TEM This FEI Titan 80-300 ST has a CEOS Cc/Cs corrector on the imaging side of the column to correct both spherical and chromatic aberrations. The Cc/Cs corrector also provides greatly-improved resolution and signal for energy filtered imaging and EELS. FEI Tecnai F20ST TEM/STEM This premier analytical transmission electron microscope (AEM) has specialized accessories including an energy-dispersive x-ray

  15. Fast electron microscopy via compressive sensing

    DOE Patents [OSTI]

    Larson, Kurt W; Anderson, Hyrum S; Wheeler, Jason W

    2014-12-09

    Various technologies described herein pertain to compressive sensing electron microscopy. A compressive sensing electron microscope includes a multi-beam generator and a detector. The multi-beam generator emits a sequence of electron patterns over time. Each of the electron patterns can include a plurality of electron beams, where the plurality of electron beams is configured to impart a spatially varying electron density on a sample. Further, the spatially varying electron density varies between each of the electron patterns in the sequence. Moreover, the detector collects signals respectively corresponding to interactions between the sample and each of the electron patterns in the sequence.

  16. Three axis vector magnet set-up for cryogenic scanning probe microscopy

    SciTech Connect (OSTI)

    Galvis, J. A.; Herrera, E.; Buendía, A.; Guillamón, I.; Vieira, S.; Suderow, H.; Azpeitia, J.; Luccas, R. F.; Munuera, C.; García-Hernandez, M.; and others

    2015-01-15

    We describe a three axis vector magnet system for cryogenic scanning probe microscopy measurements. We discuss the magnet support system and the power supply, consisting of a compact three way 100 A current source. We obtain tilted magnetic fields in all directions with maximum value of 5T along z-axis and of 1.2T for XY-plane magnetic fields. We describe a scanning tunneling microscopy-spectroscopy (STM-STS) set-up, operating in a dilution refrigerator, which includes a new high voltage ultralow noise piezodrive electronics and discuss the noise level due to vibrations. STM images and STS maps show atomic resolution and the tilted vortex lattice at 150 mK in the superconductor β-Bi{sub 2}Pd. We observe a strongly elongated hexagonal lattice, which corresponds to the projection of the tilted hexagonal vortex lattice on the surface. We also discuss Magnetic Force Microscopy images in a variable temperature insert.

  17. Biological Imaging by Soft X-Ray Diffraction Microscopy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Biological Imaging by Soft X-Ray Diffraction Microscopy Biological Imaging by Soft X-Ray Diffraction Microscopy Print Wednesday, 30 November 2005 00:00 Electron and x-ray...

  18. Record-Setting Microscopy Illuminates Energy Storage Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Record-Setting Microscopy Illuminates Energy Storage Materials Print X-ray microscopy is powerful in that it can probe large volumes of material at high spatial resolution with...

  19. Printability and inspectability of programmed pit defects on teh masks in EUV lithography

    SciTech Connect (OSTI)

    Kang, I.-Y.; Seo, H.-S.; Ahn, B.-S.; Lee, D.-G.; Kim, D.; Huh, S.; Koh, C.-W.; Cha, B.; Kim, S.-S.; Cho, H.-K.; Mochi, I.; Goldberg, K. A.

    2010-03-12

    Printability and inspectability of phase defects in ELlVL mask originated from substrate pit were investigated. For this purpose, PDMs with programmed pits on substrate were fabricated using different ML sources from several suppliers. Simulations with 32-nm HP L/S show that substrate pits with below {approx}20 nm in depth would not be printed on the wafer if they could be smoothed by ML process down to {approx}1 nm in depth on ML surface. Through the investigation of inspectability for programmed pits, minimum pit sizes detected by KLA6xx, AIT, and M7360 depend on ML smoothing performance. Furthermore, printability results for pit defects also correlate with smoothed pit sizes. AIT results for pattemed mask with 32-nm HP L/S represents that minimum printable size of pits could be {approx}28.3 nm of SEVD. In addition, printability of pits became more printable as defocus moves to (-) directions. Consequently, printability of phase defects strongly depends on their locations with respect to those of absorber patterns. This indicates that defect compensation by pattern shift could be a key technique to realize zero printable phase defects in EUVL masks.

  20. Scanning Photocurrent Microscopy of Si and Ge nanowires (Conference...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CATALYSTS; DIFFUSION LENGTH; MICROSCOPY; PHOTOCURRENTS; ...

  1. Surfaces of Intermetallics: Quasicrystals and Beyond

    SciTech Connect (OSTI)

    Yuen, Chad

    2012-10-26

    The goal of this work is to characterize surfaces of intermetallics, including quasicrystals. In this work, surface characterization is primarily focused on composition and structure using X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) performed under ultrahigh vacuum (UHV) conditions.

  2. Surface-structure sensitivity of CeO2 nanocrystals in photocatalysis...

    Office of Scientific and Technical Information (OSTI)

    heterogeneous (photo)catalysis. In this study, using aberration-corrected scanning transmission electron microscopy (STEM), the atomic surface structures of well-defined...

  3. Transmission electron microscopy analysis of corroded metal waste forms.

    SciTech Connect (OSTI)

    Dietz, N. L.

    2005-04-15

    This report documents the results of analyses with transmission electron microscopy (TEM) combined with energy dispersive X-ray spectroscopy (EDS) and selected area electron diffraction (ED) of samples of metallic waste form (MWF) materials that had been subjected to various corrosion tests. The objective of the TEM analyses was to characterize the composition and microstructure of surface alteration products which, when combined with other test results, can be used to determine the matrix corrosion mechanism. The examination of test samples generated over several years has resulted in refinements to the TEM sample preparation methods developed to preserve the orientation of surface alteration layers and the underlying base metal. The preservation of microstructural spatial relationships provides valuable insight for determining the matrix corrosion mechanism and for developing models to calculate radionuclide release in repository performance models. The TEM results presented in this report show that oxide layers are formed over the exposed steel and intermetallic phases of the MWF during corrosion in aqueous solutions and humid air at elevated temperatures. An amorphous non-stoichiometric ZrO{sub 2} layer forms at the exposed surfaces of the intermetallic phases, and several nonstoichiometric Fe-O layers form over the steel phases in the MWF. These oxide layers adhere strongly to the underlying metal, and may be overlain by one or more crystalline Fe-O phases that probably precipitated from solution. The layer compositions are consistent with a corrosion mechanism of oxidative dissolution of the steel and intermetallic phases. The layers formed on the steel and intermetallic phases form a continuous layer over the exposed waste form, although vertical splits in the layer and corrosion in pits and crevices were seen in some samples. Additional tests and analyses are needed to verify that these layers passivate the underlying metals and if passivation can break

  4. Method and apparatus for detecting the presence and thickness of carbon and oxide layers on EUV reflective surfaces

    DOE Patents [OSTI]

    Malinowski, Michael E.

    2005-01-25

    The characteristics of radiation that is reflected from carbon deposits and oxidation formations on highly reflective surfaces such as Mo/Si mirrors can be quantified and employed to detect and measure the presence of such impurities on optics. Specifically, it has been shown that carbon deposits on a Mo/Si multilayer mirror decreases the intensity of reflected HeNe laser (632.8 nm) light. In contrast, oxide layers formed on the mirror should cause an increase in HeNe power reflection. Both static measurements and real-time monitoring of carbon and oxide surface impurities on optical elements in lithography tools should be achievable.

  5. Imaging and quantitative data acquisition of biological cell walls with Atomic Force Microscopy and Scanning Acoustic Microscopy

    SciTech Connect (OSTI)

    Tittmann, B. R.; Xi, X.

    2014-09-01

    This chapter demonstrates the feasibility of Atomic Force Microscopy (AFM) and High Frequency Scanning Acoustic Microscopy (HF-SAM) as tools to characterize biological tissues. Both the AFM and the SAM have shown to provide imaging (with different resolution) and quantitative elasticity measuring abilities. Plant cell walls with minimal disturbance and under conditions of their native state have been examined with these two kinds of microscopy. After descriptions of both the SAM and AFM, their special features and the typical sample preparation is discussed. The sample preparation is focused here on epidermal peels of onion scales and celery epidermis cells which were sectioned for the AFM to visualize the inner surface (closest to the plasma membrane) of the outer epidermal wall. The nm-wide cellulose microfibrils orientation and multilayer structure were clearly observed. The microfibril orientation and alignment tend to be more organized in older scales compared with younger scales. The onion epidermis cell wall was also used as a test analog to study cell wall elasticity by the AFM nanoindentation and the SAM V(z) feature. The novelty in this work was to demonstrate the capability of these two techniques to analyze isolated, single layered plant cell walls in their natural state. AFM nanoindentation was also used to probe the effects of Ethylenediaminetetraacetic acid (EDTA), and calcium ion treatment to modify pectin networks in cell walls. The results suggest a significant modulus increase in the calcium ion treatment and a slight decrease in EDTA treatment. To complement the AFM measurements, the HF-SAM was used to obtain the V(z) signatures of the onion epidermis. These measurements were focused on documenting the effect of pectinase enzyme treatment. The results indicate a significant change in the V(z) signature curves with time into the enzyme treatment. Thus AFM and HF-SAM open the door to a systematic nondestructive structure and mechanical property

  6. Note: Fabrication and characterization of molybdenum tips for scanning tunneling microscopy and spectroscopy

    SciTech Connect (OSTI)

    Carrozzo, P.; Tumino, F.; Facibeni, A.; Passoni, M.; Casari, C. S.; Li Bassi, A.

    2015-01-15

    We present a method for the preparation of bulk molybdenum tips for Scanning Tunneling Microscopy and Spectroscopy and we assess their potential in performing high resolution imaging and local spectroscopy by measurements on different single crystal surfaces in UHV, namely, Au(111), Si(111)-7 × 7, and titanium oxide 2D ordered nanostructures supported on Au(111). The fabrication method is versatile and can be extended to other metals, e.g., cobalt.

  7. The development of optical microscopy techniques for the advancement of single-particle studies

    SciTech Connect (OSTI)

    Marchuk, Kyle

    2013-05-15

    Single particle orientation and rotational tracking (SPORT) has recently become a powerful optical microscopy tool that can expose many molecular motions. Unfortunately, there is not yet a single microscopy technique that can decipher all particle motions in all environmental conditions, thus there are limitations to current technologies. Within, the two powerful microscopy tools of total internal reflection and interferometry are advanced to determine the position, orientation, and optical properties of metallic nanoparticles in a variety of environments. Total internal reflection is an optical phenomenon that has been applied to microscopy to produce either fluorescent or scattered light. The non-invasive far-field imaging technique is coupled with a near-field illumination scheme that allows for better axial resolution than confocal microscopy and epi-fluorescence microscopy. By controlling the incident illumination angle using total internal reflection fluorescence (TIRF) microscopy, a new type of imaging probe called non-blinking quantum dots (NBQDs) were super-localized in the axial direction to sub-10-nm precision. These particles were also used to study the rotational motion of microtubules being propelled by the motor protein kinesin across the substrate surface. The same instrument was modified to function under total internal reflection scattering (TIRS) microscopy to study metallic anisotropic nanoparticles and their dynamic interactions with synthetic lipid bilayers. Utilizing two illumination lasers with opposite polarization directions at wavelengths corresponding to the short and long axis surface plasmon resonance (SPR) of the nanoparticles, both the in-plane and out-of-plane movements of many particles could be tracked simultaneously. When combined with Gaussian point spread function (PSF) fitting for particle super-localization, the binding status and rotational movement could be resolved without degeneracy. TIRS microscopy was also used to

  8. X-ray optics for scanning fluorescence microscopy and other applications

    SciTech Connect (OSTI)

    Ryon, R.W.; Warburton, W.K.

    1992-05-01

    Scanning x-ray fluorescence microscopy is analogous to scanning electron microscopy. Maps of chemical element distribution are produced by scanning with a very small x-ray beam. Goal is to perform such scanning microscopy with resolution in the range of <1 to 10 {mu}m, using standard laboratory x-ray tubes. We are investigating mirror optics in the Kirkpatrick-Baez (K-B) configuration. K-B optics uses two curved mirrors mounted orthogonally along the optical axis. The first mirror provides vertical focus, the second mirror provides horizontal focus. We have used two types of mirrors: synthetic multilayers and crystals. Multilayer mirrors are used with lower energy radiation such as Cu K{alpha}. At higher energies such as Ag K{alpha}, silicon wafers are used in order to increase the incidence angles and thereby the photon collection efficiency. In order to increase the surface area of multilayers which reflects x-rays at the Bragg angle, we have designed mirrors with the spacing between layers graded along the optic axis in order to compensate for the changing angle of incidence. Likewise, to achieve a large reflecting surface with silicon, the wafers are placed on a specially designed lever arm which is bent into a log spiral by applying force at one end. In this way, the same diffracting angle is maintained over the entire surface of the wafer, providing a large solid angle for photon collection.

  9. An In Situ Study of the Martensitic Transformation in Shape Memory Alloys Using Photoemission Electron Microscopy

    SciTech Connect (OSTI)

    Cai, Mingdong; Langford, Stephen C.; Dickinson, J. T.; Xiong, Gang; Droubay, Timothy C.; Joly, Alan G.; Beck, Kenneth M.; Hess, Wayne P.

    2007-04-15

    Thermally-induced martensitic phase transformations in polycrystalline CuZnAl and thin-film NiTiCu shape memory alloys were probed using photoemission electron microscopy (PEEM). Ultra-violet photoelectron spectroscopy shows a reversible change in the apparent work function during transformation, presumably due to the contrasting surface electronic structures of the martensite and austenite phases. In situ PEEM images provide information on the spatial distribution of these phases and the evolution of the surface microstructure during transformation. PEEM offers considerable potential for improving our understanding of martensitic transformations in shape memory alloys in real time.

  10. Probing hot-electron effects in wide area plasmonic surfaces using X-ray photoelectron spectroscopy

    SciTech Connect (OSTI)

    Ayas, Sencer; Cupallari, Andi; Dana, Aykutlu

    2014-12-01

    Plasmon enhanced hot carrier formation in metallic nanostructures increasingly attracts attention due to potential applications in photodetection, photocatalysis, and solar energy conversion. Here, hot-electron effects in nanoscale metal-insulator-metal (MIM) structures are investigated using a non-contact X-ray photoelectron spectroscopy based technique using continuous wave X-ray and laser excitations. The effects are observed through shifts of the binding energy of the top metal layer upon excitation with lasers of 445, 532, and 650?nm wavelength. The shifts are polarization dependent for plasmonic MIM grating structures fabricated by electron beam lithography. Wide area plasmonic MIM surfaces fabricated using a lithography free route by the dewetting of evaporated Ag on HfO{sub 2} exhibit polarization independent optical absorption and surface photovoltage. Using a simple model and making several assumptions about the magnitude of the photoemission current, the responsivity and external quantum efficiency of wide area plasmonic MIM surfaces are estimated as 500?nA/W and 11 10{sup ?6} for 445?nm illumination.

  11. Stimulation Emission Depletion (STED) microscopy | The Ames Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stimulation Emission Depletion (STED) microscopy What is STED? Stimulation Emission Depletion (STED) microscopy is a super resolution microscopy tool that captures super resolution images on a nanometer scale. A donut-shaped red light switches off surrounding molecules, allowing only those in the center to fluoresce. At the nanoscale, light microscopes cannot tell features apart. Because light moves as waves and the particles of light are so close together, the lens used cannot focus all of the

  12. Record-Setting Microscopy Illuminates Energy Storage Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Record-Setting Microscopy Illuminates Energy Storage Materials Record-Setting Microscopy Illuminates Energy Storage Materials Print Thursday, 22 January 2015 12:10 X-ray microscopy is powerful in that it can probe large volumes of material at high spatial resolution with exquisite chemical, electronic, and bond orientation contrast. The development of diffraction-based methods such as ptychography has, in principle, removed the resolution limit imposed by the characteristics of the x-ray optics.

  13. Electron Microscopy > Analytical Resources > Research > The Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Center at Cornell Analytical Resources In This Section Differential Electrochemical Mass Spectroscopy (DEMS) Electron Microscopy X-Ray Diffraction Electron Microscopy Aberration-Corrected Electron Microscope Facility Electron microscopy provides atomic-resolution images of the structure, composition and bonding of our fuel cells and their components. Three-dimensional images of catalyst particles and their support materials are constructed using electron tomography - a similar

  14. Atomic force microscopy investigation of the giant mimivirus

    SciTech Connect (OSTI)

    Kuznetsov, Yuri G.; Xiao Chuan; Sun Siyang; Raoult, Didier; Rossmann, Michael; McPherson, Alexander

    2010-08-15

    Mimivirus was investigated by atomic force microscopy in its native state following serial degradation by lysozyme and bromelain. The 750-nm diameter virus is coated with a forest of glycosylated protein fibers of lengths about 140 nm with diameters 1.4 nm. Fibers are capped with distinctive ellipsoidal protein heads of estimated Mr = 25 kDa. The surface fibers are attached to the particle through a layer of protein covering the capsid, which is in turn composed of the major capsid protein (MCP). The latter is organized as an open network of hexagonal rings with central depressions separated by 14 nm. The virion exhibits an elaborate apparatus at a unique vertex, visible as a star shaped depression on native particles, but on defibered virions as five arms of 50 nm width and 250 nm length rising above the capsid by 20 nm. The apparatus is integrated into the capsid and not applied atop the icosahedral lattice. Prior to DNA release, the arms of the star disengage from the virion and it opens by folding back five adjacent triangular faces. A membrane sac containing the DNA emerges from the capsid in preparation for fusion with a membrane of the host cell. Also observed from disrupted virions were masses of distinctive fibers of diameter about 1 nm, and having a 7-nm periodicity. These are probably contained within the capsid along with the DNA bearing sac. The fibers were occasionally observed associated with toroidal protein clusters interpreted as processive enzymes modifying the fibers.

  15. In situ transmission electron microscopy investigation of the...

    Office of Scientific and Technical Information (OSTI)

    In situ transmission electron microscopy investigation of the interfacial reaction between Ni and Al during rapid heating in a nanocalorimeter Grapes, Michael D. Department of...

  16. In situ transmission electron microscopy investigation of the...

    Office of Scientific and Technical Information (OSTI)

    Published Article: In situ transmission electron microscopy investigation of the interfacial reaction between Ni and Al during rapid heating in a nanocalorimeter Title: In situ...

  17. Simultaneous cryo X-ray ptychographic and fluorescence microscopy...

    Office of Scientific and Technical Information (OSTI)

    Accepted Manuscript: Simultaneous cryo X-ray ptychographic and fluorescence microscopy of green algae Prev Next Title: Simultaneous cryo X-ray ptychographic and fluorescence ...

  18. X-Ray Microscopy Reveals How Crystal Mechanics Drive Battery...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    X-Ray Microscopy Reveals How Crystal Mechanics Drive Battery Performance Print ... are one of the best performing battery electrode materials, able to repeatedly ...

  19. Simultaneous cryo X-ray ptychographic and fluorescence microscopy...

    Office of Scientific and Technical Information (OSTI)

    and fluorescence microscopy of green algae Citation Details In-Document Search ... Visit OSTI to utilize additional information resources in energy science and technology. A ...

  20. Optoacoustic Microscopy for Investigation of MaterialNanostructures...

    Office of Scientific and Technical Information (OSTI)

    be used for quantitative imaging of nanoscale material features - including features that may be buried so as to be inaccessible to conventional lightwave or electron microscopies. ...

  1. Ultrasonic-Based Mode-Synthesizing Atomic Force Microscopy -...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Only ultrasonic-based atomic force microscopy in the industry Sufficiently flexible for compatibility with spectroscopic approaches such as Raman spectroscopy Easily adaptable to ...

  2. A Sealed Liquid Cell for In Situ Transmission Electron Microscopy...

    Office of Scientific and Technical Information (OSTI)

    A Sealed Liquid Cell for In Situ Transmission Electron Microscopy of Controlled Electrochemical Processes Citation Details In-Document Search Title: A Sealed Liquid Cell for In ...

  3. Simultaneous cryo X-ray ptychographic and fluorescence microscopy...

    Office of Scientific and Technical Information (OSTI)

    ptychographic and fluorescence microscopy of green algae You are accessing a document from the Department of Energy's (DOE) Public Access Gateway for Energy & Science (PAGES). ...

  4. Modulated microwave microscopy and probes used therewith (Patent...

    Office of Scientific and Technical Information (OSTI)

    Citation Details In-Document Search Title: Modulated microwave microscopy and probes used therewith A microwave microscope including a probe tip electrode vertically positionable ...

  5. Half-harmonic Kelvin probe force microscopy with transfer function...

    Office of Scientific and Technical Information (OSTI)

    Using linear and half-harmonic BE enables quantitative correction of the cantilever transfer function. Half-harmonic band excitation Kelvin probe force microscopy (HBE KPFM) thus ...

  6. NEAR-IR TWO PHOTON MICROSCOPY IMAGING OF SILICA NANOPARTICLES...

    Office of Scientific and Technical Information (OSTI)

    NANOPARTICLES FUNCTIONALIZED WITH ISOLATED SENSITIZED Yb(III) CENTERS Citation Details In-Document Search Title: NEAR-IR TWO PHOTON MICROSCOPY IMAGING OF SILICA NANOPARTICLES ...

  7. X-Ray Diffraction Microscopy of Magnetic Structures (Journal...

    Office of Scientific and Technical Information (OSTI)

    Prev Next Title: X-Ray Diffraction Microscopy of Magnetic Structures Authors: Turner, Joshua J. ; Huang, Xiaojing ; Krupin, Oleg ; Seu, Keoki A. ; Parks, Daniel ; Kevan,...

  8. Characterization of LiMn2O4 cathodes by electrochemical strain microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Alikin, D. O.; Ievlev, A. V.; Luchkin, S. Yu.; Turygin, A. P.; Shur, V. Ya.; Kalinin, S. V.; Kholkin, A. L.

    2016-03-15

    Electrochemical strain microscopy (ESM) is a scanning probe microscopy(SPM) method in which the local electrodiffusion is probed via application of AC voltage to the SPM tip and registration of resulting electrochemical strain. In this study, we implemented ESM to measure local strain in bulk LiMn2O4 cathodes of a commercial Li-battery in different states of charge to investigate distribution of Li-ion mobility and concentration. Ramped AC ESM imaging and voltage spectroscopy were used to find the most reliable regime of measurements allowing separating and diminishing different contributions to ESM. This is not a trivial task due to complex geometry of themore » sample and various obstacles resulting in less predictable contributions of different origins into ESM response: electrostatic tip–surface interactions, charge injection, electrostriction, and flexoelectricity. Finally, understanding and control of these contributions is an important step towards quantitative interpretation of ESM data.« less

  9. Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mazet, Lucie; Jesse, Stephen; Niu, Gang; Schroeder, Thomas; Schamm-Chardon, Sylvie; Dubourdieu, Catherine; Baddorf, Arthur P.; Kalinin, Sergei V.; Yang, Sang Mo; Okatan, M. Baris

    2016-06-20

    Here, all scanning probe microscopies are subjected to topographic cross-talk, meaning the topography-related contrast in functional images. Here, we investigate the signatures of indirect topographic cross-talk in piezoresponse force microscopy (PFM) imaging and spectroscopy and its decoupling using band excitation (BE) method in ferroelectric BaTiO3 deposited on the Si substrates with free standing nanopillars of diameter 50 nm. Comparison between the single-frequency PFM and BE-PFM results shows that the measured signal can be significantly distorted by topography-induced shifts in the contact resonance frequency and cantilever transfer function. However, with proper correction, such shifts do not affect PFM imaging and hysteresismore » loop measurements. This suggests the necessity of an advanced approach, such as BE-PFM, for detection of intrinsic sample piezoresponse on the topographically non-uniform surfaces.« less

  10. Scanning Transmission X-ray Microscopy: Applications in Atmospheric Aerosol Research

    SciTech Connect (OSTI)

    Moffet, Ryan C.; Tivanski, Alexei V.; Gilles, Mary K.

    2011-01-20

    Scanning transmission x-ray microscopy (STXM) combines x-ray microscopy and near edge x-ray absorption fine structure spectroscopy (NEXAFS). This combination provides spatially resolved bonding and oxidation state information. While there are reviews relevant to STXM/NEXAFS applications in other environmental fields (and magnetic materials) this chapter focuses on atmospheric aerosols. It provides an introduction to this technique in a manner approachable to non-experts. It begins with relevant background information on synchrotron radiation sources and a description of NEXAFS spectroscopy. The bulk of the chapter provides a survey of STXM/NEXAFS aerosol studies and is organized according to the type of aerosol investigated. The purpose is to illustrate the current range and recent growth of scientific investigations employing STXM-NEXAFS to probe atmospheric aerosol morphology, surface coatings, mixing states, and atmospheric processing.