Sample records for micron-sized thin-film structures

  1. Geometric shape control of thin film ferroelectrics and resulting structures

    DOE Patents [OSTI]

    McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

    2000-01-01T23:59:59.000Z

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  2. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15T23:59:59.000Z

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  3. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31T23:59:59.000Z

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  4. Carbon nanotube thin films with ordered structures Chunsheng Du,a

    E-Print Network [OSTI]

    Pan, Ning

    Carbon nanotube thin films with ordered structures Chunsheng Du,a Jeff Yehb and Ning Pan*a Received December 2004 DOI: 10.1039/b414682d Carbon nanotube thin films with ordered structures have been developed properties, carbon nanotubes have aroused a great deal of research interest, and a wider range of potential

  5. Plasticity contributions to interface adhesion in thin-film interconnect structures

    E-Print Network [OSTI]

    Vainchtein, Anna

    Plasticity contributions to interface adhesion in thin-film interconnect structures Michael Lanea of plasticity in thin copper layers on the interface fracture resistance in thin-film interconnect structures yield properties together with a plastic flow model for the metal layers were used to predict

  6. Structural, magnetic, and optical properties of orthoferrite thin films

    E-Print Network [OSTI]

    Supplee, William Wagner

    2007-01-01T23:59:59.000Z

    Pulsed laser deposition was used to create thin films of Ce-Fe-O and Y-Fe-O systems. Deposition temperature and ambient oxygen pressure were varied systematically between samples to determine which deposition conditions ...

  7. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  8. Structure-property Relationships in Pure and Doped Epitaxial Tungsten Trioxide Thin Films

    E-Print Network [OSTI]

    Structure-property Relationships in Pure and Doped Epitaxial Tungsten Trioxide Thin Films Principal-property relationships of well- defined epitaxial tungsten trioxide (WO3) films with and without dopants, and thereby

  9. Integrated photonic structures for light trapping in thin-film Si solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

  10. Silicon-integrated thin-film structure for electro-optic applications

    DOE Patents [OSTI]

    McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

    2000-01-01T23:59:59.000Z

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  11. Dopant Ion Size and Electronic Structure Effects on Transparent Conducting Oxides. Sc-Doped CdO Thin Films

    E-Print Network [OSTI]

    Medvedeva, Julia E.

    -doped CdO (CSO) thin films have been grown on both amorphous glass and single-crystal MgO(100) substrates metallic conductivities, and relatively simple crystal structures.2,4-7 Sn doping of CdO thin films grown with the highest carrier mobilities grown to date.7 In addition, Cd2SnO4, CdIn2O4, and CdO-ZnO thin films have been

  12. Low cost and high performance light trapping structure for thin-film solar cells

    E-Print Network [OSTI]

    Wang, DongLin; Su, Gang

    2015-01-01T23:59:59.000Z

    Nano-scaled dielectric and metallic structures are popular light tapping structures in thin-film solar cells. However, a large parasitic absorption in those structures is unavoidable. Most schemes based on such structures also involve the textured active layers that may bring undesirable degradation of the material quality. Here we propose a novel and cheap light trapping structure based on the prism structured SiO2 for thin-film solar cells, and a flat active layer is introduced purposefully. Such a light trapping structure is imposed by the geometrical shape optimization to gain the best optical benefit. By examining our scheme, it is disclosed that the conversion efficiency of the flat a-Si:H thin-film solar cell can be promoted to exceed the currently certified highest value. As the cost of SiO2-based light trapping structure is much cheaper and easier to fabricate than other materials, this proposal would have essential impact and wide applications in thin-film solar cells.

  13. Ferroelectric Thin-Film Active Sensors for Structural Health , Victor Giurgiutiu1

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    , Structural health monitoring 1. INTRODUCTION 1.1 Background Piezoelectric wafer active sensors have beenFerroelectric Thin-Film Active Sensors for Structural Health Monitoring Bin Lin1 , Victor laboratory, Penn State University, University Park, PA 16802 ABSTRACT Piezoelectric wafer active sensors

  14. Effect of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films

    SciTech Connect (OSTI)

    Nongjai, R.; Khan, S.; Ahmad, H.; Khan, I. [Department of Applied Physics, Zakir Hussain College of Engineering and Technology, A.M.U., Aligarh (India); Asokan, K. [Material Science Division, Inter University Accelerator Centre, New Delhi (India)

    2013-06-03T23:59:59.000Z

    We present the influence of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films. Thin films of Co ferrite were deposited by rf sputtering on Si (100) substrate and characterized by X - Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Vibrating Sample Magnetometer (VSM). The XRD patterns showed the formation of crystalline single phase of the films. The particle size and surface roughness of the films were strongly influence by gas pressure. Hysteresis loops measured at room temperature showed the enhancement of magnetic properties with the increase of gas pressure which is attributed to the decrease of particle size.

  15. STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY

    E-Print Network [OSTI]

    Romeo, Alessandro

    STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

  16. Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009

    SciTech Connect (OSTI)

    Heske, C.

    2009-09-01T23:59:59.000Z

    Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

  17. Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

  18. Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

    SciTech Connect (OSTI)

    Nomenyo, K.; Kostcheev, S.; Lérondel, G. [Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Gadallah, A.-S. [Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, Cairo University, Giza (Egypt); Rogers, D. J. [Nanovation, 8, route de Chevreuse, 78117 Châteaufort (France)

    2014-05-05T23:59:59.000Z

    Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

  19. Electronic Structure and Chemical Bonding of Amorphous Chromium Carbide Thin Films

    E-Print Network [OSTI]

    Magnuson, Martin; Lu, Jun; Hultman, Lars; Jansson, Ulf; 10.1088/0953-8984/24/22/225004

    2012-01-01T23:59:59.000Z

    The microstructure, electronic structure, and chemical bonding of chromium carbide thin films with different carbon contents have been investigated with high-resolution transmission electron microscopy, electron energy loss spectroscopy and soft x-ray absorption-emission spectroscopies. Most of the films can be described as amorphous nanocomposites with non-crystalline CrCx in an amorphous carbon matrix. At high carbon contents, graphene-like structures are formed in the amorphous carbon matrix. At 47 at% carbon content, randomly oriented nanocrystallites are formed creating a complex microstructure of three components. The soft x-ray absorption-emission study shows additional peak structures exhibiting non-octahedral coordination and bonding.

  20. Enhancement in figure-of-merit with superlattices structures for thin-film thermoelectric devices

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; Colpitts, T.

    1997-07-01T23:59:59.000Z

    Thin-film superlattice (SL) structures in thermoelectric materials are shown to be a promising approach to obtaining an enhanced figure-of-merit, ZT, compared to conventional, state-of-the-art bulk alloyed materials. In this paper the authors describe experimental results on Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures, relevant to thermoelectric cooling and power conversion, respectively. The short-period Bi{sub 2}Te{sub 3} and Si/Ge SL structures appear to indicate reduced thermal conductivities compared to alloys of these materials. From the observed behavior of thermal conductivity values in the Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} SL structures, a distinction is made where certain types of periodic structures may correspond to an ordered alloy rather than an SL, and therefore, do not offer a significant reduction in thermal conductivity values. The study also indicates that SL structures, with little or weak quantum-confinement, also offer an improvement in thermoelectric power factor over conventional alloys. They present power factor and electrical transport data in the plane of the SL interfaces to provide preliminary support for the arguments on reduced alloy scattering and impurity scattering in Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures. These results, though tentative due to the possible role of the substrate and the developmental nature of the 3-{omega} method used to determine thermal conductivity values, suggest that the short-period SL structures potentially offer factorial improvements in the three-dimensional figure-of-merit (ZT3D) compared to current state-of-the-art bulk alloys. An approach to a thin-film thermoelectric device called a Bipolarity-Assembled, Series-Inter-Connected Thin-Film Thermoelectric Device (BASIC-TFTD) is introduced to take advantage of these thin-film SL structures.

  1. Structure of Molecular Thin Films for Organic Electronics | Stanford

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatus TomAbout » Staff125,849| OSTI,Structure of

  2. All-thin-film multilayered multiferroic structures with a slot-line for spin-electromagnetic wave devices

    SciTech Connect (OSTI)

    Nikitin, Andrey A.; Ustinov, Alexey B. [Department of Physical Electronics and Technology, St. Petersburg Electrotechnical University, St. Petersburg 197376 (Russian Federation); Department of Mathematics and Physics, Lappeenranta University of Technology, Lappeenranta 53850 Finland (Finland); Semenov, Alexander A.; Kalinikos, Boris A. [Department of Physical Electronics and Technology, St. Petersburg Electrotechnical University, St. Petersburg 197376 (Russian Federation); Lähderanta, E. [Department of Mathematics and Physics, Lappeenranta University of Technology, Lappeenranta 53850 Finland (Finland)

    2014-03-03T23:59:59.000Z

    Spin-electromagnetic waves propagating in thin-film multilayered multiferroic structures containing a slot transmission line have been investigated both experimentally and theoretically. The thin-film structure was composed of a ferrite film, a ferroelectric film, and a slot-line. It was shown that the spectrum of the spin-electromagnetic wave was formed as a result of hybridization of the spin wave in the ferrite film with the electromagnetic wave in the slot-line and was electrically and magnetically tunable. For the experimental investigations, a microwave phase shifter based on the multiferroic structure has been fabricated. Performance characteristics are presented.

  3. Structure and dielectric properties of La{sub x}Hf{sub (1?x)}O{sub y} thin films: The dependence of components

    SciTech Connect (OSTI)

    Qi, Zeming, E-mail: zmqi@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Cheng, Xuerui [Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou, Henan 450002 (China); Zhang, Guobin [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Li, Tingting [Institute of Microelectronics of Chinese Academy of Science, Beijing 100029 (China); Wang, Yuyin; Shao, Tao; Li, Chengxiang; He, Bo [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China)

    2013-07-15T23:59:59.000Z

    Graphical abstract: - Highlights: • La{sub x}Hf{sub (1?x)}O{sub y} thin films were grown by pulse laser deposition method. • The thin film with 10% La/(La + Hf) atom ratio forms a cubic HfO{sub 2} phase. • The amorphous thin films due to more La introduced have almost same local structure. • The main infrared phonon modes move to lower frequency for the amorphous thin films. • The static dielectric constants of the amorphous thin films increase with La content. - Abstract: La{sub x}Hf{sub (1?x)}O{sub y} (x = 0, 0.1, 0.3, 0.5, 0.7, y=2?(1/2)x) thin films were grown by pulsed laser deposition (PLD) method. The component dependence of the structure and vibration properties of these thin films is studied by combining X-ray diffraction, X-ray absorption fine structure (XAFS) and infrared spectroscopy. The thin film with 10% La/(La + Hf) atom ratio forms a cubic HfO{sub 2} phase and it has the largest static dielectric constant. More La atoms introduced cause amorphous phase formed and the static dielectric constants increase with the La content. Although XAFS indicates that these amorphous thin films have almost same local structures, the infrared phonon modes with most contribution to the static dielectric constant move to lower frequency, which results in the component dependence of the dielectric constant.

  4. Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

    SciTech Connect (OSTI)

    Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Yanmin; Hu, Ran; Ren, Naifei [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2013-11-14T23:59:59.000Z

    Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.

  5. Structural and magnetic properties of NiZn and Zn ferrite thin films obtained by laser ablation deposition

    E-Print Network [OSTI]

    McHenry, Michael E.

    Structural and magnetic properties of NiZn and Zn ferrite thin films obtained by laser ablation ferrite structures. Our investigations were performed on NiZn and Zn ferrite films deposited on silicon of the blocking temperature in both NiZn and Zn ferrite systems. © 2005 American Institute of Physics. DOI: 10

  6. Epitaxial thin films

    DOE Patents [OSTI]

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25T23:59:59.000Z

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  7. Structural, optical and photocatalytic properties of ZnO thin films and

    E-Print Network [OSTI]

    emitting diodes, gas sensors and transparent conducting thin films for solar cells. In this work, Zn an electronic furnace. Fig. 1. Grain size (black) and RMS variations (blue) of 1-6 layered ZnO films vs

  8. Influence of Boron doping on the structural, optical and electrical properties of CdO thin films by spray pyrolysis technique

    SciTech Connect (OSTI)

    Velusamy, P., E-mail: rampap2k@yahoo.co.in; Babu, R. Ramesh, E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Films Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli- 620024, Tamil Nadu (India); Ramamurthi, K. [Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur - 603203, Tamil Nadu (India)

    2014-04-24T23:59:59.000Z

    Cadmium oxide and Boron (B) doped Cadmium oxide thin films were deposited using spray pyrolysis technique. The structural, morphological, electrical and optical properties of undoped and B doped CdO films are analyzed by varying the dopant concentration in the solution. The structural study shows the polycrystalline nature and cubic structure of undoped and B doped CdO thin films. Surface morphological study reveals that the grains are spherical in shape. Optical and electrical studies showed n-type semiconducting nature and optical band gap of 2.44 eV of deposited thin films.

  9. Electronic structure of fully epitaxial Co2TiSn thin films

    SciTech Connect (OSTI)

    Meinert, Markus; Schmalhorst, Jan; Wulfmeier, Hendrik; Reiss, Gunter; Arenholz, Elke; Graf, Tanja; Felser, Claudia

    2010-10-28T23:59:59.000Z

    In this article we report on the properties of thin films of the full Heusler compound Co{sub 2}TiSn prepared by DC magnetron co-sputtering. Fully epitaxial, stoichiometric films were obtained by deposition on MgO (001) substrates at substrate temperatures above 600 C. The films are well ordered in the L2{sub 1} structure, and the Curie temperature exceeds slightly the bulk value. They show a significant, isotropic magnetoresistance and the resistivity becomes strongly anomalous in the paramagnetic state. The films are weakly ferrimagnetic, with nearly 1 {mu}{sub B} on the Co atoms, and a small antiparallel Ti moment, in agreement with theoretical expectations. From comparison of x-ray absorption spectra on the Co L{sub 3,2} edges, including circular and linear magnetic dichroism, with ab initio calculations of the x-ray absorption and circular dichroism spectra we infer that the electronic structure of Co{sub 2}TiSn has essentially non-localized character. Spectral features that have not been explained in detail before, are explained here in terms of the final state band structure.

  10. Femtosecond laser-induced periodic surface structure on the Ti-based nanolayered thin films

    SciTech Connect (OSTI)

    Petrovi?, Suzana M.; Gakovi?, B.; Peruško, D. [Institute of Nuclear Science—Vin?a, University of Belgrade, POB 522, 11001 Belgrade (Serbia)] [Institute of Nuclear Science—Vin?a, University of Belgrade, POB 522, 11001 Belgrade (Serbia); Stratakis, E. [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, P.O. Box 1527, Gr-711 10 Heraklion (Greece) [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, P.O. Box 1527, Gr-711 10 Heraklion (Greece); Department of Materials Science and Technology, University of Crete, 710 03 Heraklion, Crete (Greece); Bogdanovi?-Radovi?, I. [Ru?er Boškovi? Institute, P.O. Box 180, 10002 Zagreb (Croatia)] [Ru?er Boškovi? Institute, P.O. Box 180, 10002 Zagreb (Croatia); ?ekada, M. [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia)] [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Fotakis, C. [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, P.O. Box 1527, Gr-711 10 Heraklion (Greece) [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, P.O. Box 1527, Gr-711 10 Heraklion (Greece); Department of Physics, University of Crete, 714 09 Heraklion, Crete (Greece); Jelenkovi?, B. [Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia)] [Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia)

    2013-12-21T23:59:59.000Z

    Laser-induced periodic surface structures (LIPSSs) and chemical composition changes of Ti-based nanolayered thin films (Al/Ti, Ni/Ti) after femtosecond (fs) laser pulses action were studied. Irradiation is performed using linearly polarized Ti:Sapphire fs laser pulses of 40 fs pulse duration and 800 nm wavelength. The low spatial frequency LIPSS (LSFL), oriented perpendicular to the laser polarization with periods slightly lower than the irradiation wavelength, was typically formed at elevated laser fluences. On the contrary, high spatial frequency LIPSS (HSFL) with uniform period of 155 nm, parallel to the laser light polarization, appeared at low laser fluences, as well as in the wings of the Gaussian laser beam distribution for higher used fluence. LSFL formation was associated with the material ablation process and accompanied by the intense formation of nanoparticles, especially in the Ni/Ti system. The composition changes at the surface of both multilayer systems in the LSFL area indicated the intermixing between layers and the substrate. Concentration and distribution of all constitutive elements in the irradiated area with formed HSFLs were almost unchanged.

  11. Engineering domain structures in nanoscale magnetic thin films via strain Jia-Mian Hu, T. N. Yang, L. Q. Chen, and C. W. Nan

    E-Print Network [OSTI]

    Chen, Long-Qing

    Engineering domain structures in nanoscale magnetic thin films via strain Jia-Mian Hu, T. N. Yang://scitation.aip.org/termsconditions. Downloaded to ] IP: 146.186.211.66 On: Thu, 09 Jan 2014 19:48:21 #12;Engineering domain structures in nanoscale magnetic thin films via strain Jia-Mian Hu,1,a) T. N. Yang,2 L. Q. Chen,1,2 and C. W. Nan1,a) 1

  12. A study of structural transition in nanocrystalline titania thin films by X-ray diffraction Rietveld method

    SciTech Connect (OSTI)

    Murugesan, S. [Materials Synthesis and Structural Characterisation Section, Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)] [Materials Synthesis and Structural Characterisation Section, Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Padhy, N. [Corrosion Science and Technology Division, Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)] [Corrosion Science and Technology Division, Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Kuppusami, P., E-mail: pk@igcar.gov.in [Materials Synthesis and Structural Characterisation Section, Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Mudali, U. Kamachi [Corrosion Science and Technology Division, Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)] [Corrosion Science and Technology Division, Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Mohandas, E. [Materials Synthesis and Structural Characterisation Section, Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)] [Materials Synthesis and Structural Characterisation Section, Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)

    2010-12-15T23:59:59.000Z

    Structural and microstructural analyses of nanocrystalline titania thin films prepared by pulsed laser deposition have been carried out. At lower oxygen partial pressures ({<=}10{sup -4} mbar), rutile films were formed, whereas at 1.2 x 10{sup -3} mbar of oxygen partial pressure, the thin films contained both rutile and anatase phases. At 0.04 and 0.05 mbar of oxygen partial pressure, the film was purely anatase. Addition of oxygen has also shown a profound influence on the surface morphology of the as deposited titania films. Modified Rietveld method has been used to determine crystallite size, root mean square strain and fractional coordinates of oxygen of the anatase films. The influence of crystallite size and strain on the rutile to anatase phase transition is investigated.

  13. Structural and magnetic properties of NiZn-ferrite thin films prepared by radio frequency magnetron sputtering

    SciTech Connect (OSTI)

    Liu Yingli; Li Yuanxun; Zhang Huaiwu; Chen Daming; Mu Chunhong [State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2011-04-01T23:59:59.000Z

    Polycrystalline NiZn-ferrite thin films were deposited on Si(100) substrate by rf magnetron sputtering, using targets with a nominal composition of Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4}. The effects of substrate condition, sputtering pressure, and postannealing on the structure and magnetic properties of thin films have been investigated. Our results show that the preferred orientation of the NiZn spinel film changed from (311) to (400) with increasing the Ar pressure from 0.8 to 1.6 Pa, meanwhile, the grain size also increased. Atomic force microscopy analysis indicates that perfect surface morphology of the film can be obtained at a relatively lower sputtering pressure of 1.0 Pa. The relative percentage of residual oxygen increases significantly on a condition of lower sputtering pressure, and plays an important role in film structure due to the strong molecular adsorption tendency of oxygen on the film surface during the deposition process. A thin film with a typical thickness of 1 {mu}m, a saturation magnetization of 150 emu/cm{sup 3}, and a coercivity of 8.8 kA/m has been obtained after annealing at 800 deg. C, which has the potential application in magnetic integrated circuits.

  14. Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction

    SciTech Connect (OSTI)

    Buergi, J.; Molleja, J. Garcia; Feugeas, J. [Instituto de Fisica Rosario (CONICET-UNR), Bv. 27 de Febrero 210 bis, S2000EZP Rosario (Argentina); Neuenschwander, R. [Laboratorio Nacional Luz Sincrotron (LNLS), Caixa Postal 6192, CEP13083-970 Campinas (Brazil); Kellermann, G. [Departamento de Fisica (Universidade Federal do Parana), Caixa Postal 19044, CEP81531-990 Curitiba (Brazil); Craievich, A. F. [Instituto de Fisica (Universidade de Sao Paulo), Rua do Matao Travessa R 187, CEP05508-090 Sao Paulo (Brazil)

    2013-01-15T23:59:59.000Z

    The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, {theta}-2{theta} scanning, fixed {alpha}-2{theta} scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and X-ray reflectivity. The chamber was mounted on a standard four-circle diffractometer located in a synchrotron beam line and first used for a preliminary X-ray diffraction analysis of AlN thin films during their growth on the surface of a (100) silicon wafer.

  15. Homogeneous, dual layer, solid state, thin film deposition for structural and/or electrochemical characteristics

    DOE Patents [OSTI]

    Pitts, J. Roland; Lee, Se-Hee; Tracy, C. Edwin; Li, Wenming

    2014-04-08T23:59:59.000Z

    Solid state, thin film, electrochemical devices (10) and methods of making the same are disclosed. An exemplary device 10 includes at least one electrode (14) and an electrolyte (16) deposited on the electrode (14). The electrolyte (16) includes at least two homogenous layers of discrete physical properties. The two homogenous layers comprise a first dense layer (15) and a second porous layer (16).

  16. Enhanced efficiency of thin film solar cells using a shifted dual grating plasmonic structure

    E-Print Network [OSTI]

    Levy, Uriel

    .5403) Plasmonics; (310.2790) Guided waves. References and links 1. O. Morton, "Solar energy: A new day dawning Society of America OCIS codes: (350.6050) Solar energy; (050.2770) Gratings; (310.0310) Thin films; (250? Silicon valley sunrise," Nature 443(7107), 19­22 (2006). 2. M. A. Green and S. Pillai, "Harnessing

  17. Magnetic domain structure in nanocrystalline Ni-Zn-Co spinel ferrite thin films using off-axis electron holography

    SciTech Connect (OSTI)

    Zhang, D., E-mail: dzhang28@asu.edu [School of Engineering for Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287-6106 (United States); Ray, N. M.; Petuskey, W. T. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Smith, D. J.; McCartney, M. R. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

    2014-08-28T23:59:59.000Z

    We report a study of the magnetic domain structure of nanocrystalline thin films of nickel-zinc ferrite. The ferrite films were synthesized using aqueous spin-spray coating at low temperature (?90?°C) and showed high complex permeability in the GHz range. Electron microscopy and microanalysis revealed that the films consisted of columnar grains with uniform chemical composition. Off-axis electron holography combined with magnetic force microscopy indicated a multi-grain domain structure with in-plane magnetization. The correlation between the magnetic domain morphology and crystal structure is briefly discussed.

  18. Growth, structure and electrical properties of epitaxial thulium silicide thin films on silicon

    SciTech Connect (OSTI)

    Travlos, A.; Salamouras, N.; Boukos, N. [Institute of Materials Science, National Centre for Scientific Research Demokritos, Athens, (Greece) 15310] [Institute of Materials Science, National Centre for Scientific Research Demokritos, Athens, (Greece) 15310

    1997-02-01T23:59:59.000Z

    Thulium silicide thin films were grown on (100) and (111) Si by evaporation of Tm metal and Si layers and annealing in a vacuum. Electron microscopy and x-ray diffraction results showed that the TmSi{sub 2{minus}x} layers are of high crystalline quality grown epitaxially on Si. Electrical resistivity measurements showed that TmSi{sub 2{minus}x} layers are metallic exhibiting magnetic ordering below 3 K. {copyright} {ital 1997 American Institute of Physics.}

  19. X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

    SciTech Connect (OSTI)

    Siah, Sin Cheng, E-mail: siahsincheng@gmail.com, E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio, E-mail: siahsincheng@gmail.com, E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Lee, Sang Woon; Gordon, Roy G. [Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States); Heo, Jaeyeong [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Shibata, Tomohiro; Segre, Carlo U. [Physics Department and CSRRI, Illinois Institute of Technology, Chicago, Illinois 606016 (United States)

    2014-06-16T23:59:59.000Z

    We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field- and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes.

  20. Structural characterization and novel optical properties of defect chalcopyrite ZnGa{sub 2}Te{sub 4} thin films

    SciTech Connect (OSTI)

    Fouad, S.S., E-mail: icgegypt@link.net [Department of Physics, Faculty of Education, Ain Shams University, Cairo (Egypt); Sakr, G.B., E-mail: gamalsaker@yahoo.com [Department of Physics, Faculty of Education, Ain Shams University, Cairo (Egypt); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Department of Physics, Faculty of Education, Ain Shams University, Cairo (Egypt); Basset, D.M. Abdel, E-mail: dalia.physics@gmail.com [Department of Physics, Faculty of Education, Ain Shams University, Cairo (Egypt)] [Department of Physics, Faculty of Education, Ain Shams University, Cairo (Egypt)

    2011-11-15T23:59:59.000Z

    Highlights: {yields} Preparation and characterization of ZnGa{sub 2}Te{sub 4} in powder and thin film forms. {yields} Structure properties such as XRD and EDX. {yields} Optical constant of the as-deposited ZnGa{sub 2}Te{sub 4} for the first time. {yields} Extraction of the optical parameters of the studied films. -- Abstract: Stoichiometric thin film samples of the ternary ZnGa{sub 2}Te{sub 4} defect chalcopyrite compound were prepared and characterized by X-ray diffraction technique. The elemental chemical composition of the prepared bulk material as well as of the as-deposited film was determined by energy-dispersive X-ray spectrometry. ZnGa{sub 2}Te{sub 4} thin films were deposited, by conventional thermal evaporation technique onto highly cleaned glass substrates. The X-ray and electron diffraction studies revealed that the as-deposited and the annealed ZnGa{sub 2}Te{sub 4} films at annealing temperature t{sub a} {<=} 548 K are amorphous, while those annealed at t{sub a} {>=} 573 K (for 1 h), are polycrystalline. The optical properties of the as-deposited films have been investigated for the first time at normal incidence in the spectral range from 500 to 2500 nm. The refractive index dispersion in the transmission and low absorption region is adequately described by the Wemple-DiDomenico single oscillator model, whereby, the values of the oscillator parameters have been calculated. The analysis of the optical absorption coefficient revealed an in-direct optical transition with energy of 1.33 eV for the as-deposited sample. This work suggested that ZnGa{sub 2}Te{sub 4} is a good candidate in solar cell devices as an absorbing layer.

  1. Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007

    SciTech Connect (OSTI)

    Yelundur, V.; Hegedus, S.; Rohatgi, A.; Birkmire, R.

    2008-11-01T23:59:59.000Z

    GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.

  2. Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications

    E-Print Network [OSTI]

    Boyer, Edmond

    1 Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films, 35042 Rennes Cedex, France Abstract Amorphous chalcogenide and alumino-silicate thin films were (As40Se60/Ge25Sb5S70) and mixed chalcogenide-oxide layers (As40Se60/alumino-silicate and Ga10Ge15Te75

  3. x-ray resonant magnetic reflectivity of stratified magnetic structures: eigen-wave formalism and application to a Fe thin film

    E-Print Network [OSTI]

    x-ray resonant magnetic reflectivity of stratified magnetic structures: eigen-wave formalism regime up to soft and hard x-rays. The originality of the present formalism lies in the use of eigen-waves throughout the treatment. An application to a Fe thin film illustrates the methodology. I. INTRODUCTION X-ray

  4. Bulge testing of single and dual layer thin films Dryver R. Huston*ab

    E-Print Network [OSTI]

    Huston, Dryver R.

    to a thin film window. By comparing the pressure- displacement relation with a mechanical model, the elastic structures, such as the thin film windows that are used in Next Generation Lithography masks and certain MEMS it in a thin film window. Thin film windows are fabricated by removing the thick substrate out from underneath

  5. Magnetron Plasma Sputtered Nanocomposite Thin Films: Structural Surface Studies by In Vacuo Photoelectron Spectroscopy

    SciTech Connect (OSTI)

    Videnovic, Ivan R. [Faculty of Physics, University of Belgrade, P.O. Box 368, 11000 Belgrade (Serbia and Montenegro); Institut fuer Physik, Universitaet Basel, Klingelbergstr. 82, CH-4056 Basel (Switzerland)

    2004-12-01T23:59:59.000Z

    The experimental system that enables thin film deposition by chemical vapor deposition combined with magnetron sputtering and sample surface characterization by photoelectron spectroscopy (PES), without breaking the vacuum between the deposition and the characterization stage, is described. The particular goal of this work was study of the surface arrangement of embedded metallic nanoclusters of 1B group (Au, Ag, and Cu) in amorphous hydrogenated carbon (a-C:H). From the range of applied material characterization tools, we present here the results of several PES-based experiments used to reveal cluster properties at the surface: as-deposited sample PES measurements, off-normal take-off angle XPS, and in situ in-depth XPS profiling by Ar+ ion etching. Clear distinction in all PES results of the samples deposited on the grounded substrates from those deposited on -150 V dc biased ones is obtained, revealing that keeping the substrate grounded during deposition results in topmost metallic clusters covered with a very thin layer of a-C:H, while applying negative bias voltage to the substrate results in partially bald clusters on the surface.

  6. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23T23:59:59.000Z

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  7. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

    1999-01-01T23:59:59.000Z

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  8. Defect Structure of Epitaxial CrxV1 ? x Thin Films on MgO(001)

    SciTech Connect (OSTI)

    Kaspar, Tiffany C.; Bowden, Mark E.; Wang, Chong M.; Shutthanandan, V.; Manandhar, Sandeep; Van Ginhoven, Renee M.; Wirth, Brian D.; Kurtz, Richard J.

    2014-01-01T23:59:59.000Z

    Epitaxial thin films of CrxV1-x over the entire composition range were deposited on MgO(001) by molecular beam epitaxy. The films exhibited the expected 45° in-plane rotation with no evidence of phase segregation or spinodal decomposition. Pure Cr, with the largest lattice mismatch to MgO, exhibited full relaxation and cubic lattice parameters. As the lattice mismatch decreased with alloy composition, residual epitaxial strain was observed. For 0.2 ? x ? 0.4 the films were coherently strained to the substrate with associated tetragonal distortion; near the lattice-matched composition of x = 0.33, the films exhibited strain-free pseudomorphic matching to MgO. Unusually, films on the Cr-rich side of the lattice-matched composition exhibited more in-plane compression than expected from the bulk lattice parameters; this result was confirmed with both x-ray diffraction and Rutherford backscattering spectrometry channeling measurements. Although thermal expansion mismatch in the heterostructure may play a role, the dominant mechanism for this phenomenon is still unknown. High resolution transmission electron microscopy was utilized to characterize the misfit dislocation network present at the film/MgO interface. Dislocations were found to be present with a non-uniform distribution, which is attributed to the Volmer-Weber growth mode of the films. The CrxV1-x / MgO(001) system can serve as a model system to study both the fundamentals of defect formation in bcc films and the interplay between nanoscale defects such as dislocations and radiation damage.

  9. Stress evolution during growth and atomic-scale surface structure effects in transition-metal thin films

    E-Print Network [OSTI]

    Friesen, Cody A. (Cody Alden), 1978-

    2004-01-01T23:59:59.000Z

    Thin films are defined by an extremely high ratio of the in-plane dimensions to the thickness, resulting in very high surface-to-volume ratios. For this reason, the surface characteristics of a film play an important role ...

  10. Thin Film Photovoltaics Research

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy (DOE) supports research and development of four thin-film technologies on the path to achieving cost-competitive solar energy, including:

  11. Investigation of Temperature Dependent Optical Modes in GexAs35-xSe65 Thin Films: Structure Specific Raman, FIR and Optical Absorption Spectroscopy

    E-Print Network [OSTI]

    Khan, Pritam; Joshy, Abin; Sathe, Vasant; Deshpande, Uday; Adarsh, K V

    2015-01-01T23:59:59.000Z

    In this article, we present a comprehensive study of temperature and composition dependent Raman spectroscopy of GexAs35-xSe65 thin films to understand different structural units responsible for optical properties. Strikingly, our experimental results uncover the ratio of GeSe4/2 tetrahedral and AsSe3/2 pyramidal units in GexAs35-xSe65 thin films and their linear scaling relationship with temperature and x. An important notable outcome of our study is the formation of Se8 rings at lower temperatures. Our experimental results further provide interesting optical features, thermally and compositionally tunable optical absorption spectra. Detailed structure specific FIR data at room temperature also present direct information on the structural units in consistent with Raman data. We foresee that our studies are useful in determining the lightinduced response of these films and also for their potential applications in optics and optoelectronics.

  12. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    SciTech Connect (OSTI)

    Ruffner, Judith A. (Albuquerque, NM); Bullington, Jeff A. (Albuquerque, NM); Clem, Paul G. (Albuquerque, NM); Warren, William L. (Albuquerque, NM); Brinker, C. Jeffrey (Albuquerque, NM); Tuttle, Bruce A. (Albuquerque, NM); Schwartz, Robert W. (Seneca, SC)

    1999-01-01T23:59:59.000Z

    A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

  13. Rechargeable thin film battery and method for making the same

    DOE Patents [OSTI]

    Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

    2006-01-03T23:59:59.000Z

    A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

  14. Structure of epitaxial (Fe,N) codoped rutile TiO2 thin films...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    No evidence of structural disorder associated with a high concentration of oxygen vacancies is observed. Substitution of Fe for Ti could not be confirmed, although secondary...

  15. Thin Film Reliability SEMICONDUCTORS

    E-Print Network [OSTI]

    Thin Film Reliability SEMICONDUCTORS Our goal is to develop new ways to evaluate the reliability $250 billion per year. As semiconductor devices become ultra miniaturized, reliability testing becomes-world conditions as possible will enable product designers to better balance performance and reliability

  16. Thin film photovoltaic cell

    DOE Patents [OSTI]

    Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

    1982-01-01T23:59:59.000Z

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  17. Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

    E-Print Network [OSTI]

    Yu, Edward T.

    applications. However, one of the most persistent issues in solar cell design continues to be how to most and integration of active and passive media in solar cells. Myriad photonic structures containing sub of semiconductor nanostructures have inspired a host of new solar cell structures, including designs based

  18. Heteroepitaxial growth and surface structure of L1{sub 0}-MnGa(111) ultra-thin films on GaN(0001)

    SciTech Connect (OSTI)

    Mandru, Andrada-Oana; Wang, Kangkang; Cooper, Kevin; Ingram, David C.; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)] [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Garcia Diaz, Reyes; Takeuchi, Noboru [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States) [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autónoma de México, Apartado Postal 14, Ensenada Baja California, Codigo Postal 22800 (Mexico); Haider, Muhammad [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States) [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran, 31261 (Saudi Arabia)

    2013-10-14T23:59:59.000Z

    L1{sub 0}-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

  19. Structure, Magnetism, and Transport of CuCr2Se4 Thin Films

    E-Print Network [OSTI]

    2008-01-01T23:59:59.000Z

    Structure, Magnetism, and Transport of CuCr 2 Se 4 Thindichroism shows that the magnetism persists to the surfacesuch as the nature of magnetism at surfaces and interfaces.

  20. Thin-film optical initiator

    DOE Patents [OSTI]

    Erickson, Kenneth L. (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  1. 3-D photo-patterning of refractive index structures in photosensitive thin film materials

    DOE Patents [OSTI]

    Potter, Jr., Barrett George (Albuquerque, NM); Potter, Kelly Simmons (Albuquerque, NM)

    2002-01-01T23:59:59.000Z

    A method of making a three-dimensional refractive index structure in a photosensitive material using photo-patterning. The wavelengths at which a photosensitive material exhibits a change in refractive index upon exposure to optical radiation is first determined and then a portion of the surface of the photosensitive material is optically irradiated at a wavelength at which the photosensitive material exhibits a change in refractive index using a designed illumination system to produce a three-dimensional refractive index structure. The illumination system can be a micro-lenslet array, a macroscopic refractive lens array, or a binary optic phase mask. The method is a single-step, direct-write procedure to produce a designed refractive index structure.

  2. Structural and Magnetic Properties of Co-Mn-Sb Thin films

    SciTech Connect (OSTI)

    Meinert, M.; Schmalhorst, J.-M.; Ebke, D.; Liu, N. N.; Thomas, A.; Reiss, G.; Kanak, J.; Stobiecki, T.; Arenholz, E.

    2009-12-17T23:59:59.000Z

    Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counterelectrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by x-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co-Mn-Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magnetoresistance ratio of up to 24% at 13 K was found and indicates that Co-Mn-Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties.

  3. The design and manufacture of a novel thin-film microelectronic vacuum diode structure

    E-Print Network [OSTI]

    Mason, Mark E.

    2012-06-07T23:59:59.000Z

    as an alternative to the silicon transistor. To date, these approaches have been plagued with design-related problems that have retarded their acceptance as a viable technology. This work proposes a new vacuum diode structure, novel in its design. It can...

  4. Geometric and Electronic Structure of Templated C60 on Diindenoperylene Thin Films

    E-Print Network [OSTI]

    Schreiber, Frank

    -domains with the (111) plane parallel to the substrate and a significant increase of the coherent in-plane island size process has a large impact on electrical properties, inter alia charge carrier generation, and transport planes and their distribution or alignment. C60 was shown to grow with low structural order on several

  5. Characterization of LiNi?.?Mn?.?O? Thin Film Cathode Prepared by Pulsed Laser Deposition

    E-Print Network [OSTI]

    Xia, Hui

    LiNi?.?Mn?.?O? thin films have been grown by pulsed laser deposition (PLD) on stainless steel (SS) substrates. The crystallinity and structure of thin films were investigated by X-ray diffraction (XRD). Microstructure and ...

  6. Thin film buried anode battery

    DOE Patents [OSTI]

    Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

    2009-12-15T23:59:59.000Z

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  7. Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells

    E-Print Network [OSTI]

    Romeo, Alessandro

    (In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu; Chemical bath deposition; CdS buffer 1. Introduction The highest efficiencies for thin film solar cells

  8. Manipulating hybrid structures of polymer/a-Si for thin film solar cells

    SciTech Connect (OSTI)

    Peng, Ying; He, Zhiqun, E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk; Zhang, Zhi; Liang, Chunjun [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Diyaf, Adel; Ivaturi, Aruna; Wilson, John I. B., E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk [SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

    2014-03-10T23:59:59.000Z

    A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200?nm)/i-Si(450?nm)/n-Si(200?nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

  9. Strain induced electronic structure changes in magnetic transition metal oxides thin films

    SciTech Connect (OSTI)

    van der Laan, G.; Chopdekar, R.V.; Suzuki, Y.; Arenholz, E.

    2010-07-08T23:59:59.000Z

    We show that the angular dependence of x-ray magnetic circular dichroism (XMCD) is strongly sensitive to strain-induced electronic structure changes in magnetic transition metal oxides. We observe a pronounced dependence of the XMCD spectral shape on the experimental geometry as well as nonvanishing XMCD with distinct spectral features in transverse geometry in compressively strained MnCr{sub 2}O{sub 4} films. The angular dependent XMCD can be described as a sum over an isotropic and anisotropic contribution, the latter linearly proportional to the axial distortion due to strain. The XMCD spectra are well reproduced by atomic multiplet calculations.

  10. Structural Studies of Al:ZnO Powders and Thin Films | Stanford Synchrotron

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatus TomAbout » Staff125,849| OSTI, US AboutStructural

  11. Non-equilibrium structure and dynamics in a microscopic model of thin film active gels

    E-Print Network [OSTI]

    D. A. Head; W. J. Briels; G. Gompper

    2014-02-26T23:59:59.000Z

    In the presence of ATP, molecular motors generate active force dipoles that drive suspensions of protein filaments far from thermodynamic equilibrium, leading to exotic dynamics and pattern formation. Microscopic modelling can help to quantify the relationship between individual motors plus filaments to organisation and dynamics on molecular and supra-molecular length scales. Here we present results of extensive numerical simulations of active gels where the motors and filaments are confined between two infinite parallel plates. Thermal fluctuations and excluded-volume interactions between filaments are included. A systematic variation of rates for motor motion, attachment and detachment, including a differential detachment rate from filament ends, reveals a range of non-equilibrium behaviour. Strong motor binding produces structured filament aggregates that we refer to as asters, bundles or layers, whose stability depends on motor speed and differential end-detachment. The gross features of the dependence of the observed structures on the motor rate and the filament concentration can be captured by a simple one-filament model. Loosely bound aggregates exhibit super-diffusive mass transport, where filament translocation scales with lag time with non-unique exponents that depend on motor kinetics. An empirical data collapse of filament speed as a function of motor speed and end-detachment is found, suggesting a dimensional reduction of the relevant parameter space. We conclude by discussing the perspectives of microscopic modelling in the field of active gels.

  12. Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films

    SciTech Connect (OSTI)

    Agarwal, Khushboo; Mehta, B. R., E-mail: brmehta@physics.iitd.ac.in [Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)

    2014-08-28T23:59:59.000Z

    In this study, the effect of the presence of secondary phases on the structural, electrical, and thermoelectric properties of nanocomposite Bi{sub 2}Te{sub 3} films prepared by co-sputtering of silicon and carbon with Bi{sub 2}Te{sub 3} has been investigated. Growth temperature and the presence of Si and C phase are observed to have a strong effect on the topography and orientation of crystallites. X-ray diffraction study demonstrates that Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}:C samples have preferred (0 0 15) orientation in comparison to Bi{sub 2}Te{sub 3}:Si sample, which have randomly oriented crystallites. Atomic force, conducting atomic force, and scanning thermal microscopy analysis show significant differences in topographical, electrical, and thermal conductivity contrasts in Bi{sub 2}Te{sub 3}:Si and Bi{sub 2}Te{sub 3}:C samples. Due to the randomly oriented crystallites and the presence of Si along the crystallite boundaries, appreciable Seebeck coefficient, higher electrical conductivity, and lower thermal conductivity is achieved resulting in relatively higher value of power factor (3.71 mW K{sup ?2} m{sup ?1}) for Bi{sub 2}Te{sub 3}:Si sample. This study shows that by incorporating a secondary phase along crystallite boundaries, microstructural, electrical, and thermoelectric properties of the composite samples can be modified.

  13. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films

    SciTech Connect (OSTI)

    Ferri, F. A.; Zanatta, A. R.; Chambouleyron, I. [Instituto de Fisica de Sao Carlos-USP, Sao Carlos 13560-250, Sao Paulo (Brazil); Instituto de Fisica Gleb Wataghin-UNICAMP, Campinas 13083-970, Sao Paulo (Brazil)

    2006-11-01T23:59:59.000Z

    The mechanisms of silicon nanocrystal structure formation in amorphous Si films have been studied for a relative Ni impurity content varying between 0.1 and 10 at. %, i.e., from a Ni doping range to the Si-Ni alloy phase. The films, deposited by the cosputtering technique at 200 deg. C, were submitted to isochronal (15 min) annealing cycles up to 800 deg. C. Four different substrates were used to deposit the studied films: crystalline (c-) quartz, c-Si, c-Ge, and glass. Both the two orders of magnitude impurity concentration range variation and the very short annealing times were selected on purpose to investigate the first steps of the mechanism leading to the appearance of crystal seeds. The conclusions of this work are the following: (a) Ni impurity induces the low-temperature crystallization of amorphous silicon; (b) the NiSi{sub 2} silicide phase mediates, at the surface or in the bulk of the film, the crystallization process; and (c) the onset of crystallization and the crystalline fraction of the samples at each temperature depend not only on the Ni impurity concentration, but also on the nature of the substrate.

  14. Biomimetic thin film deposition

    SciTech Connect (OSTI)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01T23:59:59.000Z

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  15. Thin film composite electrolyte

    DOE Patents [OSTI]

    Schucker, Robert C. (The Woodlands, TX)

    2007-08-14T23:59:59.000Z

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  16. Enhanced Thin Film Organic Photovoltaic Devices

    Energy Innovation Portal (Marketing Summaries) [EERE]

    2014-01-10T23:59:59.000Z

    A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. The waveguided structure permits reduction of the active layer thickness, resulting in enhanced charge collection and extraction, leading to improved power conversion efficiency compared to standard OPV devices....

  17. Electronic and atomic structures of Ti{sub 1-x}Al{sub x}N thin films related to their damage behavior

    SciTech Connect (OSTI)

    Tuilier, M.-H.; Pac, M.-J.; Girleanu, M.; Covarel, G.; Arnold, G.; Louis, P. [Laboratoire de Mecanique, Materiaux et Procedes de Fabrication, Universite de Haute Alsace, 61 rue Albert Camus, F-68093 Mulhouse cedex (France); Rousselot, C. [Institut FEMTO-ST (UMR CNRS 6174), Universite de Franche-Comte, BP 71427, F-25211 Montbeliard cedex (France); Flank, A.-M. [CNRS--UR1 SOLEIL, F-91192 Gif sur Yvette cedex (France)

    2008-04-15T23:59:59.000Z

    Ti and Al K-edge x-ray absorption spectroscopy is used to investigate the electronic structure of Ti{sub 1-x}Al{sub x}N thin films deposited by reactive magnetron sputtering. The experimental near edge spectra of TiN and AlN are interpreted in the light of unoccupied density of state band structure calculations. The comparison of the structural parameters derived from x-ray absorption fine structure and x-ray diffraction reveals segregation between Al-rich and Ti-rich domains within the Ti{sub 1-x}Al{sub x}N films. Whereas x-ray diffraction probes only the crystallized domains, the structural information derived from extended x-ray absorption fine structure analysis turns on both crystalline and grain boundaries. The results are discussed by considering the damage behavior of the films depending on the composition.

  18. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, A.W.; Bhushan, M.

    1982-08-03T23:59:59.000Z

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  19. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

    1982-01-01T23:59:59.000Z

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  20. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

    1994-01-01T23:59:59.000Z

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  1. Thin film ion conducting coating

    DOE Patents [OSTI]

    Goldner, Ronald B. (Lexington, MA); Haas, Terry (Sudbury, MA); Wong, Kwok-Keung (Watertown, MA); Seward, George (Arlington, MA)

    1989-01-01T23:59:59.000Z

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  2. The limits of ultrahigh-resolution x-ray mapping: estimating uncertainties in thin-film and interface structures determined by phase retrieval methods

    SciTech Connect (OSTI)

    Zhou H.; Pindak R.; Clarke, R.; Steinberg, D.NM.; Yacoby, Y.

    2012-04-25T23:59:59.000Z

    Capturing subtle details at the sub-Angstrom level is key to understanding the structural basis of many intriguing interfacial phenomena in epitaxial thin films and nanostructures. X-ray phase retrieval methods are ideally suited to this task but the usual approaches for determination of uncertainties, based on refining a parametrized model, are not applicable in this case. Here we describe a method to estimate the uncertainties of the system electron density, obtained by phase retrieval, and of parameters of interest obtained from it. The method is based on the bootstrap approach and it can be generally applied to surface x-ray scattering data. Several examples are given which illustrate the method's utility in determining uncertainties arising from random and systematic errors. The approach also provides a quantitative measure of the validity of structural solutions obtained by phase retrieval methods.

  3. Nanostructured thin films for solid oxide fuel cells

    E-Print Network [OSTI]

    Yoon, Jongsik

    2009-05-15T23:59:59.000Z

    The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes...

  4. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22T23:59:59.000Z

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  5. Structural, chemical, and electronic state on La[subscript 0.7]Sr[subscript 0.3]MnO[subscript 3] dense thin-film surfaces at high temperature - Surface segregation

    E-Print Network [OSTI]

    Jalili, Helia

    The evolution of the surface topographic and electronic structure and chemical state of the La0.7Sr0.3MnO3 (LSMO) thin films were probed using Scanning Tunneling microscopy and X-ray photoelectron spectroscopy to identify ...

  6. Vertically Aligned Nanocomposite Thin Films

    E-Print Network [OSTI]

    Bi, Zhenxing

    2012-07-16T23:59:59.000Z

    and epitaxial growth ability on given substrates. In the present work, we investigated unique epitaxial two-phase VAN (BiFeO3)x:(Sm2O3)1-x and (La0.7Sr0.3MnO3)x:(Mn3O4)1-x thin film systems by pulsed laser deposition. These VAN thin films exhibit a highly...

  7. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01T23:59:59.000Z

    of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

  8. Studies of Block Copolymer Thin Films and Mixtures with an Ionic Liquid

    E-Print Network [OSTI]

    Virgili, Justin

    2009-01-01T23:59:59.000Z

    identification of structure and domain size in block copolymer thin films using RSoXS enables a quantitative comparison of the bulk

  9. Epitaxial Thin Film XRD | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series toESnet4:Epitaxial Thin Film XRD Epitaxial Thin Film XRD Systems

  10. Semiconductor-nanocrystal/conjugated polymer thin films

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

    2010-08-17T23:59:59.000Z

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  11. Low work function, stable thin films

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2000-01-01T23:59:59.000Z

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  12. Combustion characteristics of fuel droplets with addition of nano and micron-sized aluminum particles

    E-Print Network [OSTI]

    Qiao, Li

    Combustion characteristics of fuel droplets with addition of nano and micron-sized aluminum Aluminum nanoparticles Microexplosion Particle aggregation a b s t r a c t The burning characteristics of fuel droplets containing nano and micron-sized aluminum particles were investigated. Particle size

  13. Structural characterisation of BaTiO{sub 3} thin films deposited on SrRuO{sub 3}/YSZ buffered silicon substrates and silicon microcantilevers

    SciTech Connect (OSTI)

    Colder, H.; Jorel, C., E-mail: corentin.jorel@unicaen.fr; Méchin, L. [GREYC, UMR 6072, CNRS, ENSICAEN, UCBN, 6 bd du Maréchal Juin, 14050 Caen Cedex (France); Domengès, B. [LAMIPS, CRISMAT-NXP Semiconductors-Presto Engineering laboratory, CNRS-UMR 6508, ENSICAEN, UCBN, 2 rue de la Girafe, 14 000 Caen (France); Marie, P.; Boisserie, M. [CIMAP, UMR 6252, CNRS, ENSICAEN, UCBN, CEA, 6 bd du Maréchal Juin, 14050 Caen Cedex (France); Guillon, S.; Nicu, L. [LAAS, CNRS, Univ de Toulouse, 7 avenue du Colonel Roche, 31400 Toulouse (France); Galdi, A. [GREYC, UMR 6072, CNRS, ENSICAEN, UCBN, 6 bd du Maréchal Juin, 14050 Caen Cedex (France); Department of Industrial Engineering, CNR-SPIN Salerno, Università di Salerno, 84084 Fisciano, Salerno (Italy)

    2014-02-07T23:59:59.000Z

    We report on the progress towards an all epitaxial oxide layer technology on silicon substrates for epitaxial piezoelectric microelectromechanical systems. (101)-oriented epitaxial tetragonal BaTiO{sub 3} (BTO) thin films were deposited at two different oxygen pressures, 5.10{sup ?2} mbar and 5.10{sup ?3} mbar, on SrRuO{sub 3}/Yttria-stabilized zirconia (YSZ) buffered silicon substrates by pulsed laser deposition. The YSZ layer full (001) orientation allowed the further growth of a fully (110)-oriented conductive SrRuO{sub 3} electrode as shown by X-ray diffraction. The tetragonal structure of the BTO films, which is a prerequisite for the piezoelectric effect, was identified by Raman spectroscopy. In the BTO film deposited at 5.10{sup ?2} mbar strain was mostly localized inside the BTO grains whereas at 5.10{sup ?3} mbar, it was localized at the grain boundaries. The BTO/SRO/YSZ layers were finally deposited on Si microcantilevers at an O{sub 2} pressure of 5.10{sup ?3} mbar. The strain level was low enough to evaluate the BTO Young modulus. Transmission electron microscopy (TEM) was used to investigate the epitaxial quality of the layers and their epitaxial relationship on plain silicon wafers as well as on released microcantilevers, thanks to Focused-Ion-Beam TEM lamella preparation.

  14. Evolution of structural and optical properties of photocatalytic Fe doped TiO{sub 2} thin films prepared by RF magnetron sputtering

    SciTech Connect (OSTI)

    Nair, Prabitha B., E-mail: thomaspv-15@yahoo.com; Maneeshya, L. V., E-mail: thomaspv-15@yahoo.com; Justinvictor, V. B., E-mail: thomaspv-15@yahoo.com; Daniel, Georgi P., E-mail: thomaspv-15@yahoo.com; Joy, K., E-mail: thomaspv-15@yahoo.com; Thomas, P. V., E-mail: thomaspv-15@yahoo.com [Thin Film Lab, Post Graduate and Research Department of Physics, Mar Ivanios College, Nalanchira, Thiruvananthapuram 695015, Kerala (India)

    2014-01-28T23:59:59.000Z

    Undoped and Fe doped TiO{sub 2} thin films have been prepared by RF magnetron sputtering. Pure TiO{sub 2} thin film exhibited an amorphous-like nature. With increase in iron concentration (0–0.1 at%), the films exhibited better crystallization to anatase phase . Red shift of absorption edge was observed in the UV-vis transmittance spectra . At higher Fe concentration (0.5 at%), onset of phase transformation to rutile is noticed. Photocatalytic properties of pure and 0.1 at% Fe doped TiO{sub 2} thin films were investigated by degradation of methylene blue in UV light, visible light and light from Hg vapor lamp. 70% degradation of methylene blue was observed in the presence of Fe doped film in comparison with 3% degradation in presence of pure TiO{sub 2} film when irradiated using visible light for 2 h.

  15. Thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, Dora K. (1554 Rosalba St. NE., Albuquerque, Bernalillo County, NM 87112); Arnold, Jr., Charles (3436 Tahoe, NE., Albuquerque, Bernalillo County, NM 87111); Delnick, Frank M. (9700 Fleming Rd., Dexter, MI 48130)

    1996-01-01T23:59:59.000Z

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  16. Thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31T23:59:59.000Z

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  17. Impact of Lattice Mismatch and Stoichiometry on the Structure and Bandgap of (Fe,Cr)2O3 Epitaxial Thin Films

    SciTech Connect (OSTI)

    Kaspar, Tiffany C.; Chamberlin, Sara E.; Bowden, Mark E.; Colby, Robert J.; Shutthanandan, V.; Manandhar, Sandeep; Wang, Yong; Sushko, Petr; Chambers, Scott A.

    2014-03-13T23:59:59.000Z

    The structural properties of high-quality epitaxial (Fe1-xCrx)2O3 thin films are investigated across the composition range. Epitaxial films are deposited on a-Al2O3(0001) substrates by oxygen-plasma-assisted molecular beam epitaxy. Corundum (Fe1-xCrx)2O3 supercells relaxed by density functional theory confirm that the non-linear behavior of the bulk lattice parameters originates in the magnetic structure of the alloy films. High-resolution x-ray diffraction reveals the degree of epitaxial strain relaxation in the films, with Cr-rich films remaining partially strained to the Al2O3 substrate. For intermediate compositions, a lattice expansion and non-Poisson-like tetragonal distortion are found. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal a columnar grain structure in the films, with uniform mixing of cations on the nanometer scale. Oxygen non-stoichiometry is quantified by non-Rutherford resonant elastic scattering measurements utilizing 3.04 MeV He+. Intermediate-composition films are found to be slightly over-stoichiometric, resulting in the observed lattice expansion. Cr-rich films, in contrast, appear to be slightly oxygen deficient. A model is proposed to explain these results based on the energetics of oxygen defect formation and rate of oxygen diffusion in the corundum lattice. Compressive biaxial strain is found to reduce the bandgap of epitaxial Cr2O3 relative to the bulk value. The relationships which are elucidated between epitaxial film structure and optical properties can be applied to bandgap optimization in the (Fe,Cr)2O3 system.

  18. Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell

    E-Print Network [OSTI]

    Li, Tong; Jiang, Chun

    2010-01-01T23:59:59.000Z

    We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

  19. Structural Evolution and Alignment of Cylinder-Forming PS-b-PEP Thin Films in Confinement Studied by Time-Lapse Atomic Force Microscopy

    E-Print Network [OSTI]

    Sibener, Steven

    ultimately lead to the essentially perfect alignment of cylindrical microdomains. INTRODUCTION The generation in trough 30 cylinders on crest 1 µm Figure 1. AFM image showing macroscopic alignment of in-plane cylindrical copolymer microdomains. In the thin film region, copolymers align inside nanochannels, whereas

  20. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    SciTech Connect (OSTI)

    Ruffner, J.A.; Clem, P.G.; Tuttle, B.A. [and others

    1998-01-01T23:59:59.000Z

    Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs.

  1. Nuclear reaction analysis profiling as direct evidence for lithium ion mass transport in thin film rocking-chair'' structures

    SciTech Connect (OSTI)

    Goldner, R.B.; Haas, T.E.; Arntz, F.O.; Slaven, S.; Wong, K.K. (Electro-Optics Technology Center, Tufts University, Medford, Massachusetts 02155 (United States)); Wilkens, B. (Bellcore, Red Bank, New Jersey 07001-7040 (United States)); Shepard, C.; Lanford, W. (Accelerator Laboratory, Physics Department, State University of New York at Albany, Albany, New York 12222 (United States))

    1993-04-05T23:59:59.000Z

    A nuclear reaction analysis technique using the [ital p],[gamma] reaction, [sup 7]Li([ital p],[gamma])[sup 8]Be, occurring at approximately 440 keV, (half-width[approx]12 keV), has been utilized to determine the lithium concentration profiles in multilayer electrochromic window ( smart window'')/rechargeable battery cells when in their colored''/charged and bleached''/discharged states. The lithium profiles have been observed to shift according to the cells' states, thereby providing direct experimental evidence for the so-called rocking-chair model for such structures.

  2. Structure of epitaxial (Fe,N) codoped rutile TiO2 thin films by x-ray

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administrationcontroller systemsBiSiteNeutronStrategicOurStructure ofRepresenting a Novelabsorption.

  3. Magnetic properties of epitaxial Co-doped anatase TiO2 thin films with excellent structural quality

    SciTech Connect (OSTI)

    Kaspar, Tiffany C.; Droubay, Timothy C.; McCready, David E.; Nachimuthu, Ponnusamy; Heald, Steve M.; Wang, Chong M.; Lea, Alan S.; Shutthanandan, V.; Chambers, Scott A.; Toney, Michael F.

    2006-07-26T23:59:59.000Z

    The heteroepitaxy of Co-doped anatase TiO2 on LaAlO3(001) has been refined with the goal of determining the relationship between structural quality and magnetic ordering. By significantly reducing the deposition rate and substrate temperature, well-ordered Co:TiO2 films with unprecedented crystalline quality were obtained by oxygen-plasma-assisted molecular beam epitaxy, as characterized by x-ray diffraction. These films exhibit uniform Co doping, with no evidence of Co segregation or secondary phases throughout the film depth or on the surface. Despite the improvement in crystalline quality and Co distribution, the films exhibit negligible ferromagnetism, with saturation moments of only ~0.1 ?B/Co. This loss of ferromagnetism is in stark contrast to faster-grown Co:TiO2 films, where a higher growth rate and substrate temperature typically result in lower crystalline quality, a highly non-uniform Co distribution, and average saturation moments of ~1.2 ?B/Co. The presence of ferromagnetism in faster-grown Co:TiO2 does not appear to arise from intrinsic point defects present in the bulk material, such as charge-compensating oxygen vacancies, but is instead attributed to the presence of extended structural defects.

  4. Black Silicon Solar Thin-film Microcells Integrating Top Nanocone Structures for Broadband and Omnidirectional Light-Trapping

    E-Print Network [OSTI]

    Xu, Zhida; Brueckner, Eric P; Li, Lanfang; Jiang, Jing; Nuzzo, Ralph G; Liu, Gang L

    2014-01-01T23:59:59.000Z

    Recently developed classes of monocrystalline silicon solar microcells (u-cell) can be assembled into modules with characteristics (i.e., mechanically flexible forms, compact concentrator designs, and high-voltage outputs) that would be impossible to achieve using conventional, wafer-based approaches. In this paper, we describe a highly dense, uniform and non-periodic nanocone forest structure of black silicon (bSi) created on optically-thin (30 um) u-cells for broadband and omnidirectional light-trapping with a lithography-free and high-throughput plasma texturizing process. With optimized plasma etching conditions and a silicon nitride passivation layer, black silicon u-cells, when embedded in a polymer waveguiding layer, display dramatic increases of as much as 65.7% in short circuit current, as compared to a bare silicon device. The conversion efficiency increases from 8% to 11.5% with a small drop in open circuit voltage and fill factor.

  5. Thin film solar energy collector

    DOE Patents [OSTI]

    Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

    1983-11-22T23:59:59.000Z

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  6. Thin-film Lithium Batteries

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe1 MembersStability| EMSLforThin Thin-Film

  7. Thin films of mixed metal compounds

    DOE Patents [OSTI]

    Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

    1985-01-01T23:59:59.000Z

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  8. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Measurement of Oxygen Incorporation into Thin Film Oxides at Room Temperature Upon Ultraviolet Phton Irradiation. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

  9. Rechargeable thin-film electrochemical generator

    DOE Patents [OSTI]

    Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

    2000-09-15T23:59:59.000Z

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  10. Earth abundant materials for high efficiency heterojunction thin film solar cells

    E-Print Network [OSTI]

    Buonassisi, Tonio

    We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure ...

  11. Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer

    E-Print Network [OSTI]

    Lu, Tianlin

    2012-07-16T23:59:59.000Z

    Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

  12. Processing and properties of ytterbium-erbium silicate thin film gain media

    E-Print Network [OSTI]

    Kimerling, Lionel C.

    The structural and photoluminescence properties of ytterbium-erbium silicate thin films have been investigated. The films were fabricated by RF-magnetron co-sputtering of Er[subscript 2]O[subscript 3], Yb[subscript ...

  13. BDS thin film damage competition

    SciTech Connect (OSTI)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24T23:59:59.000Z

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  14. Strain mapping on gold thin film buckling and siliconblistering

    SciTech Connect (OSTI)

    Goudeau, P.; Tamura, N.; Parry, G.; Colin, J.; Coupeau, C.; Cleymand, F.; Padmore, H.

    2005-09-01T23:59:59.000Z

    Stress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.

  15. Structural, magnetic, and electronic properties of GdTiO{sub 3} Mott insulator thin films grown by pulsed laser deposition

    SciTech Connect (OSTI)

    Grisolia, M. N.; Bruno, F. Y.; Sando, D.; Jacquet, E.; Barthélémy, A.; Bibes, M., E-mail: manuel.bibes@thalesgroup.com [Unité Mixte de Physique, CNRS-Thales, 1 Av. Augustin Fresnel, Campus de l'Ecole Polytechnique, 91120 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France); Zhao, H. J. [Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Chen, X. M. [Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Bellaiche, L. [Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

    2014-10-27T23:59:59.000Z

    We report on the optimization process to synthesize epitaxial thin films of GdTiO{sub 3} on SrLaGaO{sub 4} substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie temperature T{sub C}?=?31.8?K with a saturation magnetization of 4.2??{sub B} per formula unit at 10?K. Transport measurements reveal an insulating response, as expected. Optical spectroscopy indicates a band gap of ?0.7?eV, comparable to the bulk value. Our work adds ferrimagnetic orthotitanates to the palette of perovskite materials for the design of emergent strongly correlated states at oxide interfaces using a versatile growth technique such as pulsed laser deposition.

  16. Visible spectrometer utilizing organic thin film absorption

    E-Print Network [OSTI]

    Tiefenbruck, Laura C. (Laura Christine)

    2004-01-01T23:59:59.000Z

    In this thesis, I modeled and developed a spectrometer for the visible wavelength spectrum, based on absorption characteristics of organic thin films. The device uses fundamental principles of linear algebra to reconstruct ...

  17. Solid State Thin Film Lithium Microbatteries

    E-Print Network [OSTI]

    Shi, Z.

    Solid state thin film lithium microbatteries fabricated by pulsed-laser deposition (PLD) are suggested. During deposition the following process parameters must be considered, which are laser energy and fluence, laser pulse ...

  18. Ion Beam Deposition of Thin Films: Growth Processes and Nanostructure Formation

    SciTech Connect (OSTI)

    Hofsaess, Hans C. [II. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund-Platz 1, D-37077 Goettingen (Germany)

    2004-12-01T23:59:59.000Z

    Ion beam deposition is a process far from thermodynamic equilibrium and is in particular suited to grow metastable thin films with diamond-like properties, such as tetrahedral amorphous carbon (ta-C) and cubic boron nitride (c-BN). In this contribution the atomistic description of the deposition and growth processes are reviewed and compared to experimental results, obtained from mass selected ion beam deposition. The focus will be set to the nucleation and growth processes of boron nitride as a model system for ion based thin film formation. Furthermore, recent examples for nanostructure formation in ion deposited compound thin films will be presented. Ion beam deposited metal-carbon nano-composite thin films exhibit a variety of different morphologies such as rather homogeneous nanocluster distributions embedded in an a-C matrix, but also the self-organized formation of nanoscale multilayer structures.

  19. Method for making surfactant-templated, high-porosity thin films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    An evaporation-induced self-assembly method to prepare a surfactant-templated thin film by mixing a silica sol, a surfactant, and a hydrophobic polymer and then evaporating a portion of the solvent during coating onto a substrate and then heating to form a liquid-phase, thin film material with a porosity greater than approximately 50 percent. The high porosity thin films can have dielectric constants less than 2 to be suitable for applications requiring low-dielectric constants. An interstitial compound can be added to the mixture, with the interstitial compound either covalently bonded to the pores or physically entrapped within the porous structure. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  20. Investigation into the growth and structure of thin-film solid solutions of iron-based superconductors in the FeSe{sub 0.92}-FeSe{sub 0.5}Te{sub 0.5} system

    SciTech Connect (OSTI)

    Stepantsov, E. A., E-mail: stepantsov@ns.cryst.ras.ru [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Kazakov, S. M.; Belikov, V. V. [Moscow State University (Russian Federation)] [Moscow State University (Russian Federation); Makarova, I. P. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)] [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Arpaia, R.; Gunnarsson, R.; Lombardi, F. [Chalmers University of Technology, Department of Microtechnology and Nanoscience (Sweden)] [Chalmers University of Technology, Department of Microtechnology and Nanoscience (Sweden)

    2013-09-15T23:59:59.000Z

    Thin films of FeSe{sub 0.92} and FeSe{sub 0.5}Te{sub 0.5} iron chalcogenide superconductors and solid solutions containing these components in different ratios have been grown on the surface of LaAlO{sub 3} (10 1-bar 2) crystals by pulsed laser deposition. Films of solid solutions have been deposited by simultaneous laser ablation from two targets of the FeSe{sub 0.92} and FeSe{sub 0.5}Te{sub 0.5} stoichiometric compositions onto one substrate. An X-ray diffraction study of the film structure shows that the films grown are epitaxial and their lattice parameters regularly vary with the ratio of the deposited components, which was controllably varied by changing the ablation intensities from the targets.

  1. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

    1998-10-06T23:59:59.000Z

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

  2. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

    1998-10-06T23:59:59.000Z

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

  3. Optical Constants ofOptical Constants of Uranium Nitride Thin FilmsUranium Nitride Thin Films

    E-Print Network [OSTI]

    Hart, Gus

    Optical Constants ofOptical Constants of Uranium Nitride Thin FilmsUranium Nitride Thin FilmsDelta--Beta Scatter Plot at 220 eVBeta Scatter Plot at 220 eV #12;Why Uranium Nitride?Why Uranium Nitride? UraniumUranium, uranium,Bombard target, uranium, with argon ionswith argon ions Uranium atoms leaveUranium atoms leave

  4. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOE Patents [OSTI]

    Brinker, Charles Jeffrey (Albuquerque, NM); Prakash, Sai Sivasankaran (Minneapolis, MN)

    1999-01-01T23:59:59.000Z

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  5. Controlled nanostructuration of polycrystalline tungsten thin films

    SciTech Connect (OSTI)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l'Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d'Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07T23:59:59.000Z

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  6. Influence of different sulfur to selenium ratios on the structural and electronic properties of Cu(In,Ga)(S,Se){sub 2} thin films and solar cells formed by the stacked elemental layer process

    SciTech Connect (OSTI)

    Mueller, B. J., E-mail: bjm.mueller@web.de [Robert Bosch GmbH, Corporate Research and Advance Engineering, Advanced Functional Materials and Microsystems, D-70839 Gerlingen (Germany); Institute of Micro- and Nanomaterials, University of Ulm, D-89081 Ulm (Germany); Zimmermann, C.; Haug, V., E-mail: veronika.haug@de.bosch.com; Koehler, T.; Zweigart, S. [Robert Bosch GmbH, Corporate Research and Advance Engineering, Advanced Functional Materials and Microsystems, D-70839 Gerlingen (Germany); Hergert, F. [Bosch Solar CISTech GmbH, D-14772 Brandenburg (Germany); Herr, U., E-mail: ulrich.herr@uni-ulm.de [Institute of Micro- and Nanomaterials, University of Ulm, D-89081 Ulm (Germany)

    2014-11-07T23:59:59.000Z

    In this study, we investigate the effect of different elemental selenium to elemental sulfur ratios on the chalcopyrite phase formation in Cu(In,Ga)(S,Se){sub 2} thin films. The films are formed by the stacked elemental layer process. The structural and electronic properties of the thin films and solar cells are analyzed by means of scanning electron microscopy, glow discharge optical emission spectrometry, X-ray diffraction, X-ray fluorescence, Raman spectroscopy, spectral photoluminescence as well as current-voltage, and quantum efficiency measurements. The influence of different S/(S+Se) ratios on the anion incorporation and on the Ga/In distribution is investigated. We find a homogenous sulfur concentration profile inside the film from the top surface to the bottom. External quantum efficiency measurements show that the band edge of the solar cell device is shifted to shorter wavelength, which enhances the open-circuit voltages. The relative increase of the open-circuit voltage with S/(S+Se) ratio is lower than expected from the band gap energy trend, which is attributed to the presence of S-induced defects. We also observe a linear decrease of the short-circuit current density with increasing S/(S+Se) ratio which can be explained by a reduced absorption. Above a critical S/(S+Se) ratio of around 0.61, the fill factor drops drastically, which is accompanied by a strong series resistance increase which may be attributed to changes in the back contact or p-n junction properties.

  7. A study on dependence of the structural, optical and electrical properties of cadmium lead sulphide thin films on Cd/Pb ratio

    SciTech Connect (OSTI)

    Nair, Sinitha B., E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Abraham, Anitha, E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Philip, Rachel Reena, E-mail: reenatara@rediffmail.com [Thin film research Lab, U.C. College, Aluva, Kerala (India); Pradeep, B., E-mail: bp@cusat.ac.in [Solid State Physics Laboratory, Cochin University of science and Technology, Cochin (India); Shripathi, T., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com; Ganesan, V., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com [UGC-DAE CSR, Khandwa Road, Indore, 452001, Madhya Pradesh (India)

    2014-10-15T23:59:59.000Z

    Cadmium Lead Sulphide thin films with systematic variation in Cd/Pb ratio are prepared at 333K by CBD, adjusting the reagent-molarity, deposition time and pH. XRD exhibits crystalline-amorphous transition as Cd% exceeds Pb%. AFM shows agglomeration of crystallites of size ?50±5 nm. EDAX assess the composition whereas XPS ascertains the ternary formation, with binding energies of Pb4f{sub 7/2} and 4f{sub 5/2}, Cd3d{sub 5/2} and 3d{sub 3/2} and S2p at 137.03, 141.606, 404.667, 412.133 and 160.218 eV respectively. The optical absorption spectra reveal the variance in the direct allowed band gaps, from 1.57eV to 2.42 eV as Cd/Pb ratio increases from 0.2 to 2.7, suggesting possibility of band gap engineering in the n-type films.

  8. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect (OSTI)

    Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Mete, Tayfun; Ellmer, Klaus [Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)

    2014-04-21T23:59:59.000Z

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w???d{sub f}{sup ?}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent ? is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ? increases with film thickness also with a power law according to ????d{sub f}{sup z} with exponents z?=?0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2?+?1 dimensions is discussed for the ITO growth in this work.

  9. Deformation Behavior of Sub-micron and Micron Sized Alumina Particles in Compression.

    SciTech Connect (OSTI)

    Sarobol, Pylin; Chandross, Michael E.; Carroll, Jay; Mook, William; Boyce, Brad; Kotula, Paul G.; McKenzie, Bonnie B.; Bufford, Daniel Charles; Hall, Aaron Christopher.

    2014-09-01T23:59:59.000Z

    The ability to integrate ceramics with other materials has been limited due to high temperature (>800degC) ceramic processing. Recently, researchers demonstrated a novel process , aerosol deposition (AD), to fabricate ceramic films at room temperature (RT). In this process, sub - micro n sized ceramic particles are accelerated by pressurized gas, impacted on the substrate, plastically deformed, and form a dense film under vacuum. This AD process eliminates high temperature processing thereby enabling new coatings and device integration, in which ceramics can be deposited on metals, plastics, and glass. However, k nowledge in fundamental mechanisms for ceramic particle s to deform and form a dense ceramic film is still needed and is essential in advancing this novel RT technology. In this wo rk, a combination of experimentation and atomistic simulation was used to determine the deformation behavior of sub - micron sized ceramic particle s ; this is the first fundamental step needed to explain coating formation in the AD process . High purity, singl e crystal, alpha alumina particles with nominal size s of 0.3 um and 3.0 um were examined. Particle characterization, using transmission electron microscopy (TEM ), showed that the 0.3 u m particles were relatively defect - free single crystals whereas 3.0 u m p articles were highly defective single crystals or particles contained low angle grain boundaries. Sub - micron sized Al 2 O 3 particles exhibited ductile failure in compression. In situ compression experiments showed 0.3um particles deformed plastically, fractured, and became polycrystalline. Moreover, dislocation activit y was observed within the se particles during compression . These sub - micron sized Al 2 O 3 particles exhibited large accum ulated strain (2 - 3 times those of micron - sized particles) before first fracture. I n agreement with the findings from experimentation , a tomistic simulation s of nano - Al 2 O 3 particles showed dislocation slip and significant plastic deformation during compressi on . On the other hand, the micron sized Al 2 O 3 particles exhibited brittle f racture in compression. In situ compression experiments showed 3um Al 2 O 3 particles fractured into pieces without observable plastic deformation in compression. Particle deformation behaviors will be used to inform Al 2 O 3 coating deposition parameters and particle - particle bonding in the consolidated Al 2 O 3 coatings.

  10. MEMS-based thin-film fuel cells

    DOE Patents [OSTI]

    Jankowksi, Alan F.; Morse, Jeffrey D.

    2003-10-28T23:59:59.000Z

    A micro-electro-mechanical systems (MEMS) based thin-film fuel cells for electrical power applications. The MEMS-based fuel cell may be of a solid oxide type (SOFC), a solid polymer type (SPFC), or a proton exchange membrane type (PEMFC), and each fuel cell basically consists of an anode and a cathode separated by an electrolyte layer. Additionally catalyst layers can also separate the electrodes (cathode and anode) from the electrolyte. Gas manifolds are utilized to transport the fuel and oxidant to each cell and provide a path for exhaust gases. The electrical current generated from each cell is drawn away with an interconnect and support structure integrated with the gas manifold. The fuel cells utilize integrated resistive heaters for efficient heating of the materials. By combining MEMS technology with thin-film deposition technology, thin-film fuel cells having microflow channels and full-integrated circuitry can be produced that will lower the operating temperature an will yield an order of magnitude greater power density than the currently known fuel cells.

  11. Thin film absorber for a solar collector

    DOE Patents [OSTI]

    Wilhelm, William G. (Cutchogue, NY)

    1985-01-01T23:59:59.000Z

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  12. Thin film dielectric composite materials

    DOE Patents [OSTI]

    Jia, Quanxi (Los Alamos, NM); Gibbons, Brady J. (Los Alamos, NM); Findikoglu, Alp T. (Los Alamos, NM); Park, Bae Ho (Los Alamos, NM)

    2002-01-01T23:59:59.000Z

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  13. Tungsten-doped thin film materials

    DOE Patents [OSTI]

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09T23:59:59.000Z

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  14. Thin Film Transistors On Plastic Substrates

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

    2004-01-20T23:59:59.000Z

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  15. Vibration welding system with thin film sensor

    DOE Patents [OSTI]

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18T23:59:59.000Z

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  16. The interplay between spatially separated ferromagnetic and superconducting thin films

    E-Print Network [OSTI]

    Sullivan, Isaac John

    2013-02-22T23:59:59.000Z

    Ferromagnetic thin films have been grown via physical vapor deposition utilizing the technique of flash evaporation and characterized by measuring magnetization as a function of magnetic field. An Al thin film was evaporated atop the ferromagnetic...

  17. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Guided Self-Assembly of Gold Thin Films Print Wednesday, 21 November 2012 12:18 Nanoparticles-man-made atoms with unique optical,...

  18. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-plasma-assisted Molecular Beam Epitaxy. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by...

  19. aluminium thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 21 Thin-Film Metamaterials called Sculptured Thin Films CERN Preprints Summary: Morphology...

  20. Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells

    E-Print Network [OSTI]

    Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

    2013-01-01T23:59:59.000Z

    We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

  1. SINGLE AND DUAL LAYER THIN FILM BULGE TESTING

    E-Print Network [OSTI]

    Huston, Dryver R.

    film windows that are used in Next Generation Lithography masks and certain MEMS devices. The bulge testing method measures the mechanical properties of a thin film by isolating it in a thin film window of the system. Figure 6 Dual Layer Thin Film Membrane Window For a dual layer membrane the effective total

  2. THIN FILM MECHANICS BULGING AND Ph.D Dissertation

    E-Print Network [OSTI]

    Huston, Dryver R.

    for the intensive effort in research in materials and processing techniques. Thin film windows are window underneath. The thin film window has such a small thickness to span ratio that it can usually be considered and precision-stretching of thin film windows are examined. Bulge Testing is a method used to evaluate

  3. NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES

    E-Print Network [OSTI]

    Suresh, Subra

    NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

  4. US polycrystalline thin film solar cells program

    SciTech Connect (OSTI)

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L. (Solar Energy Research Inst., Golden, CO (USA)) [Solar Energy Research Inst., Golden, CO (USA)

    1989-11-01T23:59:59.000Z

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  5. Effect of defects on long-pulse laser-induced damage of two kinds of optical thin films

    SciTech Connect (OSTI)

    Wang Bin; Qin Yuan; Ni Xiaowu; Shen Zhonghua; Lu Jian

    2010-10-10T23:59:59.000Z

    In order to study the effect of defects on the laser-induced damage of different optical thin films, we carried out damage experiments on two kinds of thin films with a 1ms long-pulse laser. Surface-defect and subsurface-defect damage models were used to explain the damage morphology. The two-dimensional finite element method was applied to calculate the temperature and thermal-stress fields of these two films. The results show that damages of the two films are due to surface and subsurface defects, respectively. Furthermore, the different dominant defects for thin films of different structures are discussed.

  6. Hierarchical Assemblies of Block-Copolymer-Based Supramolecules in Thin Films

    SciTech Connect (OSTI)

    Tung, Shih-Huang; Kalarickal, Nisha C.; Mays, Jimmy W.; Xu, Ting (UCB); (ORNL)

    2009-09-08T23:59:59.000Z

    The hierarchical assemblies of supramolecules, which consisted of polystyrene-b-poly(4-vinylpyridine) (PS-b-P4VP) with 3-pentadecylphenol (PDP) hydrogen-bonded to the 4VP, were investigated in thin films after solvent annealing in a chloroform atmosphere. The synergistic coassembly of PS-b-P4VP and PDP was utilized to generate oriented hierarchical structures in thin films. Hierarchical assemblies, including lamellae-within-lamellae and cylinders-within-lamellae, were simultaneously ordered and oriented from a few to several tens of nanometers over macroscopic length scales. The macroscopic orientation of supramolecular assembly depends on the P4VP(PDP) fraction and can be tailored by varying the PDP to P4VP ratio without interfering with the supramolecular morphologies. The lamellar and cylindrical microdomains, with a periodicity of {approx}40 nm, could be oriented normal to the surface, while the assembly of comb blocks, P4VP(PDP), with a periodicity of {approx}4 nm, were oriented parallel to the surface. Furthermore, using one PS-b-P4VP copolymer, thin films with different hierarchical structures, i.e., lamellae-within-lamellae and cylinders-within-lamellae, were obtained by varying the ratio of PDP to 4VP units. The concepts described in these studies can be potentially applied to other BCP-based supramolecular thin films, thus creating an avenue to functional, hierarchically ordered thin films.

  7. Thin film solar cell including a spatially modulated intrinsic layer

    DOE Patents [OSTI]

    Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

    1989-03-28T23:59:59.000Z

    One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

  8. Durable silver thin film coating for diffraction gratings

    DOE Patents [OSTI]

    Wolfe, Jesse D. (Discovery Bay, CA); Britten, Jerald A. (Oakley, CA); Komashko, Aleksey M. (San Diego, CA)

    2006-05-30T23:59:59.000Z

    A durable silver film thin film coated non-planar optical element has been developed to replace Gold as a material for fabricating such devices. Such a coating and resultant optical element has an increased efficiency and is resistant to tarnishing, can be easily stripped and re-deposited without modifying underlying grating structure, improves the throughput and power loading of short pulse compressor designs for ultra-fast laser systems, and can be utilized in variety of optical and spectrophotometric systems, particularly high-end spectrometers that require maximized efficiency.

  9. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect (OSTI)

    Seo, Won-Oh; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 136-713 (Korea, Republic of); Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol [Radiation Integrated System Research Division, Korea Atomic Energy Research Institute (KAERI), Daejeon 305-353 (Korea, Republic of); Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2014-08-25T23:59:59.000Z

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2?MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  10. Niobium thin film deposition studies on copper surfaces for superconducting radio frequency cavity applications

    SciTech Connect (OSTI)

    W. M. Roach, D. B. Beringer, J. R. Skuza, W. A. Oliver, C. Clavero, C. E. Reece, R. A. Lukaszew

    2012-06-01T23:59:59.000Z

    Thin film coatings have the potential to increase both the thermal efficiency and accelerating gradient in superconducting radio frequency accelerator cavities. However, before this potential can be realized, systematic studies on structure-property correlations in these thin films need to be carried out since the reduced geometry, combined with specific growth parameters, can modify the physical properties of the materials when compared to their bulk form. Here, we present our systematic studies of Nb thin films deposited onto Cu surfaces to clarify possible reasons for the limited success that this process exhibited in previous attempts. We compare these films with Nb grown on other surfaces. In particular, we study the crystal structure and surface morphology and their effect on superconducting properties, such as critical temperature and lower critical field. We found that higher deposition temperature leads to a sharper critical temperature transition, but also to increased roughness indicating that there are competing mechanisms that must be considered for further optimization.

  11. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    SciTech Connect (OSTI)

    Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati - 517 502, A.P, India and Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India); Hymavathi, B.; Rao, T. Subba [Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India)

    2014-01-28T23:59:59.000Z

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2? = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (?E) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, ?. The value of n and k increases with the increase of substrate temperature.

  12. Polycrystalline thin films FY 1992 project report

    SciTech Connect (OSTI)

    Zweibel, K. [ed.

    1993-01-01T23:59:59.000Z

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  13. Electrostatic thin film chemical and biological sensor

    DOE Patents [OSTI]

    Prelas, Mark A. (Columbia, MO); Ghosh, Tushar K. (Columbia, MO); Tompson, Jr., Robert V. (Columbia, MO); Viswanath, Dabir (Columbia, MO); Loyalka, Sudarshan K. (Columbia, MO)

    2010-01-19T23:59:59.000Z

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  14. Thin film photovoltaic panel and method

    DOE Patents [OSTI]

    Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

    1991-06-11T23:59:59.000Z

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  15. Packaging material for thin film lithium batteries

    DOE Patents [OSTI]

    Bates, John B. (116 Baltimore Dr., Oak Ridge, TN 37830); Dudney, Nancy J. (11634 S. Monticello Rd., Knoxville, TN 37922); Weatherspoon, Kim A. (223 Wadsworth Pl., Oak Ridge, TN 37830)

    1996-01-01T23:59:59.000Z

    A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

  16. Annealed CVD molybdenum thin film surface

    DOE Patents [OSTI]

    Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

    1984-01-01T23:59:59.000Z

    Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

  17. Method of preparing high-temperature-stable thin-film resistors

    DOE Patents [OSTI]

    Raymond, L.S.

    1980-11-12T23:59:59.000Z

    A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

  18. Investigations of CuInSe sub 2 thin films and contacts

    SciTech Connect (OSTI)

    Nicolet, M.A. (California Inst. of Tech., Pasadena, CA (United States))

    1991-10-01T23:59:59.000Z

    This report describes research into electrical contacts for copper indium diselenide (CuInSe{sub 2}) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CuInSe{sub 2} thin films for photovoltaic cells, a second part of the program investigated how the morphologies, phases, and reactions of pre-selenization Cu-In structures are affected by the deposition process and heat treatments. 7 refs., 6 figs.

  19. Method of preparing high-temperature-stable thin-film resistors

    DOE Patents [OSTI]

    Raymond, Leonard S. (Tucson, AZ)

    1983-01-01T23:59:59.000Z

    A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

  20. Solar Energy Materials & Solar Cells 91 (2007) 17261732 Optical and structural properties of Ta2O5CeO2 thin films

    E-Print Network [OSTI]

    Thirumalai, Devarajan

    Solar Energy Materials & Solar Cells 91 (2007) 1726­1732 Optical and structural properties of Ta2O5

  1. Sputter deposition for multi-component thin films

    DOE Patents [OSTI]

    Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

    1990-01-01T23:59:59.000Z

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  2. Sputter deposition for multi-component thin films

    DOE Patents [OSTI]

    Krauss, A.R.; Auciello, O.

    1990-05-08T23:59:59.000Z

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  3. Vapor deposition of thin films

    DOE Patents [OSTI]

    Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

    1992-01-01T23:59:59.000Z

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  4. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01T23:59:59.000Z

    Research, Thin-Film Photovoltaic (PV) Cells Market Analysiscost of photovoltaic systems (such as solar cells) due tosolar cells are created by depositing layers of photovoltaic

  5. Institute of Photo Electronic Thin Film Devices and Technology...

    Open Energy Info (EERE)

    Technology of Nankai University Place: Tianjin Municipality, China Zip: 300071 Sector: Solar Product: A thin-film solar cell research institute in China. References: Institute...

  6. applications thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nikolay 27 Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application Engineering Websites Summary: Solvent-enhanced dye diffusion in...

  7. Low-Cost Light Weigh Thin Film Solar Concentrators

    Broader source: Energy.gov (indexed) [DOE]

    Light Weight Thin Film Solar Concentrators PI: Gani B. Ganapathi (JPLCaltech) Other Contributors: L'Garde: Art Palisoc, Gyula Greschik, Koorosh Gidanian JPL: Bill Nesmith,...

  8. antibacterial thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Skovlin, Dean Oliver 2012-06-07 138 Uncooled Thin Film Pyroelectric IR Detector with Aerogel Thermal Isolation CiteSeer Summary: Uncooled pyroelectric IR imaging systems, such...

  9. acid thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  10. almgb14 thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  11. aggase2 thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  12. ablation thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  13. aln thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    deposited by the reactive dc magnetron sputtering technique at room, amorphous and polycrystalline GaN thin films have been deposited using the magnetron sputtering...

  14. anatase thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  15. area thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  16. aluminide thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  17. antiferroelectric thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  18. ain thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  19. advanced thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  20. arsenide thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  1. Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High temperature oxygen sensors are widely used for exhaust gas monitoring in automobiles. This particular study explores the use of thin film single crystalline samaria...

  2. In situ Raman spectroscopy of lanthanum-strontium-cobaltite thin films

    E-Print Network [OSTI]

    Breucop, Justin Daniel

    2012-01-01T23:59:59.000Z

    Raman spectroscopy is used to probe the structural change of Lanthanum Strontium Cobaltite (La1.xSrxCoO 3 -8) thin films across change in composition (0%-60% strontium) and temperature (30*C-520°C). Raman shift peaks were ...

  3. Optimisation of masked ion irradiation damage profiles in YBCO thin films by Monte Carlo simulation

    E-Print Network [OSTI]

    Webb, Roger P.

    Optimisation of masked ion irradiation damage profiles in YBCO thin films by Monte Carlo simulation production with a given mask structure. The results suggest that minimum ion scattering broadening tails with beam energy up to a few hundred keV, though the throughput is intrinsically low [1]. A combination

  4. Angular behavior of the absorption limit in thin film silicon solar cells

    E-Print Network [OSTI]

    Naqavi, Ali; Söderström, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

    2013-01-01T23:59:59.000Z

    We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

  5. Thin film photovoltaic device with multilayer substrate

    DOE Patents [OSTI]

    Catalano, Anthony W. (Rushland, PA); Bhushan, Manjul (Wilmington, DE)

    1984-01-01T23:59:59.000Z

    A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

  6. Dynamical scaling properties of nanoporous undoped and Sb-doped SnO{sub 2} supported thin films during tri- and bidimensional structure coarsening

    SciTech Connect (OSTI)

    Santilli, C. V.; Rizzato, A. P.; Pulcinelli, S. H.; Craievich, A. F. [Instituto de Quimica/UNESP, P.O. Box 355, Araraquara, Sao Paulo 14800-900 (Brazil); Instituto de Fisica/USP, P.O. Box 66318, Sao Paulo, Sao Paulo 05315-970, (Brazil)

    2007-05-15T23:59:59.000Z

    The coarsening of the nanoporous structure developed in undoped and 3% Sb-doped SnO{sub 2} sol-gel dip-coated films deposited on a mica substrate was studied by time-resolved small-angle x-ray scattering (SAXS) during in situ isothermal treatments at 450 and 650 deg. C. The time dependence of the structure function derived from the experimental SAXS data is in reasonable agreement with the predictions of the statistical theory of dynamical scaling, thus suggesting that the coarsening process in the studied nanoporous structures exhibits dynamical self-similar properties. The kinetic exponents of the power time dependence of the characteristic scaling length of undoped SnO{sub 2} and 3% Sb-doped SnO{sub 2} films are similar ({alpha}{approx_equal}0.09), this value being invariant with respect to the firing temperature. In the case of undoped SnO{sub 2} films, another kinetic exponent, {alpha}{sup '}, corresponding to the maximum of the structure function was determined to be approximately equal to three times the value of the exponent {alpha}, as expected for the random tridimensional coarsening process in the dynamical scaling regime. Instead, for 3% Sb-doped SnO{sub 2} films fired at 650 deg. C, we have determined that {alpha}{sup '}{approx_equal}2{alpha}, thus suggesting a bidimensional coarsening of the porous structure. The analyses of the dynamical scaling functions and their asymptotic behavior at high q (q being the modulus of the scattering vector) provided additional evidence for the two-dimensional features of the pore structure of 3% Sb-doped SnO{sub 2} films. The presented experimental results support the hypotheses of the validity of the dynamic scaling concept to describe the coarsening process in anisotropic nanoporous systems.

  7. Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics

    E-Print Network [OSTI]

    Chung, Choong-Heui

    2012-01-01T23:59:59.000Z

    nanowire networks as window layers in thin film solar cells.window layer for fully solution-deposited thin filmITO) thin films by silver nanowire composite window layers

  8. Synthesis and application perspective of advanced plasma polymerized organic thin films

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    Synthesis and application perspective of advanced plasma polymerized organic thin films I.-S. Bae a November 2005 Abstract Plasma polymerized cyclohexane and ethylcyclohexane organic thin films were rights reserved. Keywords: Plasma polymerization; Ethylcyclohexane and cyclohexane organic thin films

  9. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, B.E.; McLean, W. II

    1996-02-13T23:59:59.000Z

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  10. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, Bruce E. (Pleasanton, CA); McLean, II, William (Oakland, CA)

    1996-01-01T23:59:59.000Z

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  11. Rechargeable thin-film lithium batteries

    SciTech Connect (OSTI)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

    1993-09-01T23:59:59.000Z

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

  12. STRESSES AND FAILURE MODES IN THIN FILMS AND MULTILAYERS

    E-Print Network [OSTI]

    Hutchinson, John W.

    Stressesin a Thin Film 4 2.3 Stresses in a Multilayer: Layer by Layer Deposition and Release from of the Interface a Bilayer under Residual Stress 30 5.2 Delamination of a Bilayer by Layer Cracking Parallel FOR THIN FILMS UNDER RESIDUAL COMPRESSION 36 6.1 Straight-sided Blisters 36 6.2 Circular Blisters 40 6

  13. CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS

    E-Print Network [OSTI]

    Hart, Gus

    CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS by David T. Oliphant. Woolley Dean, College of Physical and Mathematical Sciences #12;ABSTRACT CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS David T. Oliphant Department of Physics and Astronomy

  14. Avalanches through windows: Multiscale visualization in magnetic thin films

    E-Print Network [OSTI]

    Sethna, James P.

    Avalanches through windows: Multiscale visualization in magnetic thin films Alessandro Magni, Cornell University, Ithaca, NY 14853-2501 Abstract--The dynamics of domain walls motion in thin films dynamics, but are strongly dependent on the size of the windows chosen. Here we investigate how to properly

  15. Fracture patterns in thin films and multilayers Alex A. Volinsky

    E-Print Network [OSTI]

    Volinsky, Alex A.

    Fracture patterns in thin films and multilayers Alex A. Volinsky University of South Florida, excessive residual and externally applied stresses cause film fracture. In the case of tensile stress is the key for causing thin film fracture, either in tension, or compression, it is the influence

  16. APPLIED PHYSICS REVIEWS Erbium implanted thin film photonic materials

    E-Print Network [OSTI]

    Polman, Albert

    , phosphosilicate, borosilicate, and soda-lime glasses , ceramic thin films Al2O3, Y2O3, LiNbO3 , and amorphous. Phosphosilicate glass. . . . . . . . . . . . . . . . . . . . . . 7 C. Soda-lime silicate glass Er-doped thin film photonic materials is described. It focuses on oxide glasses pure SiO2

  17. A survey of thin-film solar photovoltaic industry & technologies

    E-Print Network [OSTI]

    Grama, Sorin

    2007-01-01T23:59:59.000Z

    A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

  18. Wave propagation in highly inhomogeneous thin films: exactly solvable models

    E-Print Network [OSTI]

    Boyer, Edmond

    Wave propagation in highly inhomogeneous thin films: exactly solvable models Guillaume Petite(1 of wave propagation in some inhomogeneous thin films with highly space- dependent dielectric constant will show that depending on the type of space dependence, an incident wave can either propagate or tunnel

  19. E-Print Network 3.0 - alumina thin films Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    constant in RF devices. Some unique features of thin-film silica and alumina aerogels have been... aerogel thin films, silica and alumina aerogel cantilevers were...

  20. Surface Patterns of Tetragonal Phase FePt Thin Films from Pt{at}Fe2O3 Core-Shell Nanoparticles Using Combined Langmuir-Blodgett and Soft Lithographic Techniques

    SciTech Connect (OSTI)

    Guo, Q.; Teng, X.; Yang, H.

    2003-09-30T23:59:59.000Z

    OAK B204 We present the fabrication of micron-sized patterns of FePt thin films from Pt{at}Fe2O3 core-shell nanoparticles. In a typical procedure, Pt@Fe2O3 core-shell nanoparticles were spread and formed a Langmuir film using water as the subphase. This film was lifted onto polydimethylsiloxane (PDMS) stamps with micron-sized patterns of lines, dots and wells, and transferred onto silicon wafers using microcontact printing (u-CP). The patterns of Pt@Fe2O3 core-shell nanoparticles were converted into face-centered tetragonal phase FePt alloy at enhanced temperatures in the presence of 5% hydrogen. Scanning electron microscopy (SEM), atomic force microscopy (AFM), powder X-ray diffraction (PXRD) and superconducting quantum interference device (SQUID) magnetometer were used to characterize the patterns and the properties of the final FePt alloy films.

  1. Characterization of sputter deposited thin film scandate cathodes for miniaturized thermionic converter applications

    SciTech Connect (OSTI)

    Zavadil, K.R.; Ruffner, J.H.; King, D.B. [Sandia National Laboratories, Materials Processing Sciences Center, Albuquerque, New Mexico 87185-0340 (United States)

    1999-01-01T23:59:59.000Z

    We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work function, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a Sc{sub 2}O{sub 3} matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA{center_dot}cm{sup {minus}2} at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson{close_quote}s constant, A{sup {asterisk}}) of 36 mA{center_dot}cm{sup {minus}2}{center_dot}K{sup {minus}2}. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties. {copyright} {ital 1999 American Institute of Physics.}

  2. Characterization of Sputter Deposited Thin Film Scandate Cathodes for Miniaturized Thermionic Converter Applications

    SciTech Connect (OSTI)

    King, D.B.; Ruffner, J.H.; Zavadil, K.R.

    1998-12-14T23:59:59.000Z

    We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work fimction, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a SqOq matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA.cm-2 at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson's constant, A*) of 36 mA.cm-2.K-2. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties.

  3. Equiatomic CoPt thin films with extremely high coercivity

    SciTech Connect (OSTI)

    Varghese, Binni; Piramanayagam, S. N., E-mail: Prem-SN@dsi.a-star.edu.sg; Yang, Yi; Kai Wong, Seng; Khume Tan, Hang; Kiat Lee, Wee [Data Storage Institute, (A-STAR) Agency for Science, Technology and Research, DSI Building, 5, Engineering Drive 1, Singapore 117608 (Singapore); Okamoto, Iwao [Western Digital Corporation, Singapore 638552 (Singapore)

    2014-05-07T23:59:59.000Z

    In this paper, magnetic and structural properties of near-equiatomic CoPt thin films, which exhibited a high coercivity in the film-normal direction—suitable for perpendicular magnetic recording media applications—are reported. The films exhibited a larger coercivity of about 6.5 kOe at 8?nm. The coercivity showed a monotonous decrease as the film thickness was increased. The transmission electron microscopy images indicated that the as fabricated CoPt film generally consists of a stack of magnetically hard hexagonal-close-packed phase, followed by stacking faults and face-centred-cubic phase. The thickness dependent magnetic properties are explained on the basis of exchange-coupled composite media. Epitaxial growth on Ru layers is a possible factor leading to the unusual observation of magnetically hard hcp-phase at high concentrations of Pt.

  4. Isothermal dehydration of thin films of water and sugar solutions

    SciTech Connect (OSTI)

    Heyd, R. [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France)] [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France); Rampino, A. [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France) [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France); Laboratory of Physical and Macromolecular Chemistry, University of Trieste, Via Giorgieri 1, 34127 Trieste (Italy); Bellich, B.; Elisei, E. [Laboratory of Physical and Macromolecular Chemistry, University of Trieste, Via Giorgieri 1, 34127 Trieste (Italy)] [Laboratory of Physical and Macromolecular Chemistry, University of Trieste, Via Giorgieri 1, 34127 Trieste (Italy); Cesàro, A. [Laboratory of Physical and Macromolecular Chemistry, University of Trieste, Via Giorgieri 1, 34127 Trieste (Italy) [Laboratory of Physical and Macromolecular Chemistry, University of Trieste, Via Giorgieri 1, 34127 Trieste (Italy); Elettra Sincrotrone Trieste, Area Science Park, I-34149 Trieste (Italy); Saboungi, M.-L. [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France) [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France); Institut de Minéralogie, de Physique des Matériaux, et de Cosmochimie (IMPMC), Sorbonne Univ-UPMC, Univ Paris 06, UMR CNRS 7590, Museum National d’Histoire Naturelle, IRD UMR 206, 4 Place Jussieu, F-75005 Paris (France)

    2014-03-28T23:59:59.000Z

    The process of quasi-isothermal dehydration of thin films of pure water and aqueous sugar solutions is investigated with a dual experimental and theoretical approach. A nanoporous paper disk with a homogeneous internal structure was used as a substrate. This experimental set-up makes it possible to gather thermodynamic data under well-defined conditions, develop a numerical model, and extract needed information about the dehydration process, in particular the water activity. It is found that the temperature evolution of the pure water film is not strictly isothermal during the drying process, possibly due to the influence of water diffusion through the cellulose web of the substrate. The role of sugar is clearly detectable and its influence on the dehydration process can be identified. At the end of the drying process, trehalose molecules slow down the diffusion of water molecules through the substrate in a more pronounced way than do the glucose molecules.

  5. Photoconductivity in reactively evaporated copper indium selenide thin films

    SciTech Connect (OSTI)

    Urmila, K. S., E-mail: urmilaks7@gmail.com; Asokan, T. Namitha, E-mail: urmilaks7@gmail.com; Pradeep, B., E-mail: urmilaks7@gmail.com [Solid State Physics Laboratory, Cochin University of Science and Technology, Kochi, Kerala (India); Jacob, Rajani; Philip, Rachel Reena [Thin Film Research Laboratory, Union Christian College, Aluva, Kerala (India)

    2014-01-28T23:59:59.000Z

    Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup ?5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (?) of 10{sup 6} cm{sup ?1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

  6. Graphite aerogels and the formation mechanism of unusual micron-sized rod and helical structures .

    E-Print Network [OSTI]

    Wisner, Clarissa Ann

    2014-01-01T23:59:59.000Z

    ??"Pyrolysis at 800 ºC under argon has shown that polyimide (PI), polyacrylonitrile (PAN), polydicyclopentadiene (DCPD) and polybenzoxazine (PBO) aerogels are all viable alternatives to traditional… (more)

  7. Metallophthalocyanine thin films : structure and physical properties

    E-Print Network [OSTI]

    Colesniuc, Corneliu Nicolai

    2011-01-01T23:59:59.000Z

    organic spintronics, optoelectronics and photonics have seenin spintronics, optoelectronics, and photonics. Organic

  8. Structures for dense, crack free thin films

    DOE Patents [OSTI]

    Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

    2011-03-08T23:59:59.000Z

    The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

  9. Metallophthalocyanine thin films : structure and physical properties

    E-Print Network [OSTI]

    Colesniuc, Corneliu Nicolai

    2011-01-01T23:59:59.000Z

    palladium (Pd/MPc/Pd) electrodes, and using both CuPc andPd devices with different organic layer thickness. Positive bias was applied on the bottom electrode. (Pd devices with different organic layer thickness. Positive bias was ix applied on the bottom electrode. (

  10. Glow discharge plasma deposition of thin films

    DOE Patents [OSTI]

    Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

    1984-05-29T23:59:59.000Z

    A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

  11. Thin films of mixed metal compounds

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11T23:59:59.000Z

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  12. Thin Film Femtosecond Laser Damage Competition

    SciTech Connect (OSTI)

    Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

    2009-11-14T23:59:59.000Z

    In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

  13. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jamer M.; Sterbinsky G.; Assaf, B.; Arena, D.; Heiman, D.

    2014-12-07T23:59:59.000Z

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value. (auth)

  14. Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    , biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active for electron holography of a thin film solar cell using conventional lift-out specimen preparation and a homeFocused ion beam specimen preparation for electron holography of electrically biased thin film

  15. DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

  16. Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films

    SciTech Connect (OSTI)

    Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana [Materials Physics Division, School of Advanced Sciences, VIT University, Vellore - 632 014 (India)

    2014-04-24T23:59:59.000Z

    Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

  17. Antimony-Doped Tin(II) Sulfide Thin Films

    E-Print Network [OSTI]

    Chakraborty, Rupak

    Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ...

  18. A Review of Thin Film Silicon for Solar Cell Applications

    E-Print Network [OSTI]

    A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

  19. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-06-01T23:59:59.000Z

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  20. Modeling of thin-film solar thermoelectric generators

    E-Print Network [OSTI]

    Weinstein, Lee Adragon

    Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

  1. Fluorination of amorphous thin-film materials with xenon fluoride

    DOE Patents [OSTI]

    Weil, R.B.

    1987-05-01T23:59:59.000Z

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  2. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-06-01T23:59:59.000Z

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  3. Multimonth controlled small molecule release from biodegradable thin films

    E-Print Network [OSTI]

    Hammond, Paula T.

    Long-term, localized delivery of small molecules from a biodegradable thin film is challenging owing to their low molecular weight and poor charge density. Accomplishing highly extended controlled release can facilitate ...

  4. amorphous thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amorphous Silicon Thin-Film Transistor Pixel.S.A. 1 LG Philips LCD Research and Development Center, An-Yang, 431-080, Korea (Received July 23, 2006; accepted October 31, 2006;...

  5. amorphous thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amorphous Silicon Thin-Film Transistor Pixel.S.A. 1 LG Philips LCD Research and Development Center, An-Yang, 431-080, Korea (Received July 23, 2006; accepted October 31, 2006;...

  6. Initiated chemical vapor deposition of functional polyacrylic thin films

    E-Print Network [OSTI]

    Mao, Yu, 1975-

    2005-01-01T23:59:59.000Z

    Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

  7. al thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    dalek@eee.hku.hk , C. Y. Kwong, T. W. Lau, L. S. M. Lam, and W. K 276 DEFECT-FREE THIN FILM MEMBRANES FOR H2 SEPARATION AND ISOLATION Energy Storage, Conversion and...

  8. al thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    dalek@eee.hku.hk , C. Y. Kwong, T. W. Lau, L. S. M. Lam, and W. K 276 DEFECT-FREE THIN FILM MEMBRANES FOR H2 SEPARATION AND ISOLATION Energy Storage, Conversion and...

  9. Monolithic integration of thin-film coolers with optoelectronic devices

    E-Print Network [OSTI]

    Monolithic integration of thin-film coolers with optoelectronic devices Christopher La Barbara, California 93106-9560 Abstract. Active refrigeration of optoelectronic components through the use manuscript received June 30, 2000; accepted for publication June 30, 2000. 1 Introduction Optoelectronic

  10. Role of Microstructural Phenomena in Magnetic Thin Films. Final Report

    SciTech Connect (OSTI)

    Laughlin, D. E.; Lambeth, D. N.

    2001-04-30T23:59:59.000Z

    Over the period of the program we systematically varied microstructural features of magnetic thin films in an attempt to better identify the role which each feature plays in determining selected extrinsic magnetic properties. This report summarizes the results.

  11. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema (OSTI)

    Sandia

    2009-09-01T23:59:59.000Z

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  12. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema (OSTI)

    None

    2010-01-08T23:59:59.000Z

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  13. Orientational Analysis of Molecules in Thin Films | Stanford...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Orientational Analysis of Molecules in Thin Films Monday, September 17, 2012 - 10:00am SSRL Bldg. 137, room 226 Daniel Kaefer The synchrotron-based X-ray absorption spectroscopy is...

  14. National High Magnetic Field Laboratory: Magnetic Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    recorded work with magnetic thin films took place in the 1880s and was carried out by German physicist August Kundt. Well known for his research on sound and optics, Kundts...

  15. Enabling integration of vapor-deposited polymer thin films

    E-Print Network [OSTI]

    Petruczok, Christy D. (Christy Danielle)

    2014-01-01T23:59:59.000Z

    Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

  16. Method for making surfactant-templated thin films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

    2010-08-31T23:59:59.000Z

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  17. Method for making surfactant-templated thin films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

    2002-01-01T23:59:59.000Z

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  18. Laser Induced Breakdown Spectroscopy and Applications Toward Thin Film Analysis

    E-Print Network [OSTI]

    Owens, Travis Nathan

    2011-01-01T23:59:59.000Z

    on the surface. Ultrafast laser pulses are shorter than thethe advantages of ultrafast laser pulses for thin film LIBS,each time. While ultrafast laser pulses are effective in

  19. ag thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MgO, Ref. 21 Marcon, Marco 2 Multi-level surface enhanced Raman scattering using AgOx thin film Physics Websites Summary: by applying laser-direct writing (LDW) technique on...

  20. Properties and sensor performance of zinc oxide thin films

    E-Print Network [OSTI]

    Min, Yongki, 1965-

    2003-01-01T23:59:59.000Z

    Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

  1. Functionalized multilayer thin films for protection against acutely toxic agents

    E-Print Network [OSTI]

    Krogman, Kevin Christopher

    2009-01-01T23:59:59.000Z

    The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

  2. Direct printing of lead zirconate titanate thin films

    E-Print Network [OSTI]

    Bathurst, Stephen, 1980-

    2008-01-01T23:59:59.000Z

    Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

  3. Thin-film solar cell fabricated on a flexible metallic substrate

    DOE Patents [OSTI]

    Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

    2006-05-30T23:59:59.000Z

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  4. Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

    DOE Patents [OSTI]

    Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

    2006-05-30T23:59:59.000Z

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  5. Recent technological advances in thin film solar cells

    SciTech Connect (OSTI)

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01T23:59:59.000Z

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  6. Nonlinear viscoelastic characterization of thin films using dynamic mechanical analysis

    E-Print Network [OSTI]

    Payne, Debbie Flowers

    1993-01-01T23:59:59.000Z

    NONLINEAR VISCOELASTIC CHARACTERIZATION OF THIN FILMS USING DYNAMIC MECHANICAL ANALYSIS A Thesis by DEBBIE FLOWERS PAYNE Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE AUGUST 1993 Major Subject: Aerospace Engineering NONLINEAR VISCOELASTIC CHARACTERIZATION OF THIN FILMS USING DYNAMIC MECHANICAL ANALYSIS A Thesis by DEBBIE FLOWERS PAYNE Approved as to style and content by: Thomas W...

  7. Synthesis, crystal structure and thermal decomposition of [La{sub 2}(CH{sub 3}CH{sub 2}COO){sub 6}.(H{sub 2}O){sub 3}].3.5H{sub 2}O precursor for high-k La{sub 2}O{sub 3} thin films deposition

    SciTech Connect (OSTI)

    Ciontea, L., E-mail: Lelia.Ciontea@chem.utcluj.ro [Materials Science Laboratory, Technical University of Cluj-Napoca, Str. C. Daicoviciu 15, Cluj-Napoca (Romania); Nasui, M.; Petrisor, T.; Mos, R.B.; Gabor, M.S. [Materials Science Laboratory, Technical University of Cluj-Napoca, Str. C. Daicoviciu 15, Cluj-Napoca (Romania)] [Materials Science Laboratory, Technical University of Cluj-Napoca, Str. C. Daicoviciu 15, Cluj-Napoca (Romania); Varga, R.A. [Faculty of Chemistry and Chemical Engineering, Babes-Bolyai University, Cluj-Napoca (Romania)] [Faculty of Chemistry and Chemical Engineering, Babes-Bolyai University, Cluj-Napoca (Romania); Petrisor, T. [Materials Science Laboratory, Technical University of Cluj-Napoca, Str. C. Daicoviciu 15, Cluj-Napoca (Romania)] [Materials Science Laboratory, Technical University of Cluj-Napoca, Str. C. Daicoviciu 15, Cluj-Napoca (Romania)

    2010-09-15T23:59:59.000Z

    Lanthanum acetylacetonate La(C{sub 5}H{sub 7}O{sub 2}){sub 3}.xH{sub 2}O has been used in the preparation of the precursor solution for the deposition of polycrystalline La{sub 2}O{sub 3} thin films on Si(1 1 1) single crystalline substrates. The precursor chemistry of the as-prepared coating solution, precursor powder and precursor single crystal have been investigated by Fourier Transformed Infrared Spectroscopy (FTIR), differential thermal analysis coupled with quadrupole mass spectrometry (TG-DTA-QMS) and X-ray diffraction. The FTIR and X-ray diffraction analyses have revealed the complex nature of the coating solution due to the formation of a lanthanum propionate complex. The La{sub 2}O{sub 3} thin films deposited by spin coating on Si(1 1 1) substrate exhibit good morphological and structural properties. The films heat treated at 800 {sup o}C crystallize in a hexagonal phase with the lattice parameters a = 3,89 A and c = 6.33 A, while at 900 {sup o}C the films contain both the hexagonal and cubic La{sub 2}O{sub 3} phase.

  8. Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

    SciTech Connect (OSTI)

    Bolat, S., E-mail: bolat@ee.bilkent.edu.tr, E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B. [Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800 (Turkey); UNAM, National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey); Ozgit-Akgun, C.; Biyikli, N. [UNAM, National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey); Okyay, A. K., E-mail: bolat@ee.bilkent.edu.tr, E-mail: aokyay@ee.bilkent.edu.tr [Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800 (Turkey); UNAM, National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey)

    2014-06-16T23:59:59.000Z

    We report GaN thin film transistors (TFT) with a thermal budget below 250?°C. GaN thin films are grown at 200?°C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3?nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3?V/decade. The entire TFT device fabrication process temperature is below 250?°C, which is the lowest process temperature reported for GaN based transistors, so far.

  9. Picoseconds-Laser Modification of Thin Films

    SciTech Connect (OSTI)

    Gakovic, Biljana; Trtica, Milan [Institute of Nuclear Sciences 'VINCA' 522, 11001 Belgrade (Serbia and Montenegro); Batani, Dimitri; Desai, Tara; Redaelli, Renato [Dipartimento di Fisica 'G. Occhialini', Universita' degli Studi Milano-Bicocca, Piazza della Scienza 3, Milan 20126 (Italy)

    2006-04-07T23:59:59.000Z

    The interaction of a Nd:YAG laser, pulse duration of 40 ps, with a titanium nitride (TiN) and tungsten-titanium (W-Ti) thin films deposited at silicon was studied. The peak intensity on targets was up to 1012 W/cm2. Results have shown that the TiN surface was modified, by the laser beam, with energy density of {>=}0.18 J/cm2 ({lambda}laser= 532 nm) as well as of 30.0 J/cm2 ({lambda}laser= 1064 nm). The W-Ti was surface modified with energy density of 5.0 J/cm2 ({lambda}laser= 532 nm). The energy absorbed from the Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects such as melting, vaporization of molten materials, dissociation and ionization of the vaporized material, appearance of plasma, etc. The following morphological changes of both targets were observed: (i) The appearance of periodic microstructures, in the central zone of the irradiated area, for laser irradiation at 532 nm. Accumulation of great number of laser pulses caused film ablation and silicon modification. (ii) Hole formation on the titanium nitride/silicon target was registered at 1064 nm. The process of the Nd:YAG laser interaction with both targets was accompanied by plasma formation above the target.

  10. Electrochromism in copper oxide thin films

    SciTech Connect (OSTI)

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15T23:59:59.000Z

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  11. Adhesion and Thin-Film Module Reliability

    SciTech Connect (OSTI)

    McMahon, T. J.; Jorgenson, G. J.

    2006-01-01T23:59:59.000Z

    Among the infrequently measured but essential properties for thin-film (T-F) module reliability are the interlayer adhesion and cohesion within a layer. These can be cell contact layers to glass, contact layers to the semiconductor, encapsulant to cell, glass, or backsheet, etc. We use an Instron mechanical testing unit to measure peel strengths at 90deg or 180deg and, in some cases, a scratch and tape pull test to evaluate inter-cell layer adhesion strengths. We present peel strength data for test specimens laminated from the three T-F technologies, before and after damp heat, and in one instance at elevated temperatures. On laminated T-F cell samples, failure can occur uniformly at any one of the many interfaces, or non-uniformly across the peel area at more than one interface. Some peel strengths are Lt1 N/mm. This is far below the normal ethylene vinyl acetate/glass interface values of >10 N/mm. We measure a wide range of adhesion strengths and suggest that adhesion measured under higher temperature and relative humidity conditions is more relevant for module reliability.

  12. Josephson junction in a thin film

    SciTech Connect (OSTI)

    Kogan, V. G.; Dobrovitski, V. V.; Clem, J. R.; Mawatari, Yasunori; Mints, R. G.

    2001-04-01T23:59:59.000Z

    The phase difference {phi}(y) for a vortex at a line Josephson junction in a thin film attenuates at large distances as a power law, unlike the case of a bulk junction where it approaches exponentially the constant values at infinities. The field of a Josephson vortex is a superposition of fields of standard Pearl vortices distributed along the junction with the line density {phi}'(y)/2{pi}. We study the integral equation for {phi}(y) and show that the phase is sensitive to the ratio l/{Lambda}, where l={lambda}{sub J}{sup 2}/{lambda}{sub L}, {Lambda}=2{lambda}{sub L}{sup 2}/d, {lambda}{sub L}, and {lambda}{sub J} are the London and Josephson penetration depths, and d is the film thickness. For l<<{Lambda}, the vortex ''core'' of the size l is nearly temperature independent, while the phase ''tail'' scales as l{Lambda}/y{sup 2}={lambda}{sub J}2{lambda}{sub L}/d/y{sup 2}; i.e., it diverges as T{yields}T{sub c}. For l>>{Lambda}, both the core and the tail have nearly the same characteristic length l{Lambda}.

  13. Epitaxial Ba{sub 2}IrO{sub 4} thin-films grown on SrTiO{sub 3} substrates by pulsed laser deposition

    SciTech Connect (OSTI)

    Nichols, J., E-mail: john.nichols@uky.edu; Korneta, O. B.; Terzic, J.; Cao, G.; Brill, J. W.; Seo, S. S. A. [Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506 (United States)

    2014-03-24T23:59:59.000Z

    We have synthesized epitaxial Ba{sub 2}IrO{sub 4} (BIO) thin-films on SrTiO{sub 3} (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metal-insulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr{sub 2}IrO{sub 4}. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting physical properties predicted in layered iridates.

  14. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

    SciTech Connect (OSTI)

    Cho, Byungsu [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741 (Korea, Republic of); Choi, Yonghyuk; Shin, Seokyoon [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Jeon, Heeyoung [Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Seo, Hyungtak, E-mail: hseo@ajou.ac.kr [Department of Materials Science and Engineering and Energy Systems Research, Ajou University, Suwon 443-739 (Korea, Republic of); Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2014-01-27T23:59:59.000Z

    We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

  15. Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings

    SciTech Connect (OSTI)

    Long, Rong, E-mail: rlongmech@gmail.com [Department of Mechanical Engineering, University of Alberta, Edmonton, Alberta T6G 2G8 (Canada); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Dunn, Martin L. [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Singapore University of Technology and Design, Singapore 138682 (Singapore)

    2014-06-21T23:59:59.000Z

    Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

  16. Nitrogen doped zinc oxide thin film

    SciTech Connect (OSTI)

    Li, Sonny X.

    2003-12-15T23:59:59.000Z

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  17. ZnO transparent thin films for gas sensor applications M. Suchea a,b,, S. Christoulakis a,b

    E-Print Network [OSTI]

    in solar cells and flat panel displays as well as for the fabrication of gratings in optoelectronic de analysis of thin films sputtered from a ceramic target has shown a completely different surface behavior of the earliest discovered metal oxide gas sensing materials. It is an n-type semiconductor of wurtzite structure

  18. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    SciTech Connect (OSTI)

    None

    2008-06-30T23:59:59.000Z

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

  19. Growth and characterization of Pt-protected Gd5Si4 thin films

    SciTech Connect (OSTI)

    Hadimani, R. L.; Mudryk, Y.; Prost, T. E.; Pecharsky, V. K.; Gschneidner, K. A.; Jiles, D. C.

    2014-05-07T23:59:59.000Z

    Successful growth and characterization of thin films of giant magnetocaloric Gd5(SixGe1?x)4 were reported in the literature with limited success. The inherent difficulty in producing this complex material makes it difficult to characterize all the phases present in the thin films of this material. Therefore, thin film of binary compound of Gd5Si4 was deposited by pulsed laser deposition. It was then covered with platinum on the top of the film to protect against any oxidation when the film was exposed to ambient conditions. The average film thickness was measured to be approximately 350?nm using a scanning electron microscopy, and the composition of the film was analyzed using energy dispersive spectroscopy. X-ray diffraction analysis indicates the presence of Gd5Si4 orthorhombic structure along with Gd5Si3 secondary phase. The transition temperature of the film was determined from magnetic moment vs. temperature measurement. The transition temperature was between 320 and 345?K which is close to the transition temperature of the bulk material. Magnetic moment vs. magnetic field measurement confirmed that the film was ferromagnetic below 342?K.

  20. Robustness and Versatility of Thin Films on Low Temperature Cofired Ceramic (LTCC)

    SciTech Connect (OSTI)

    Wolf, J. Ambrose; Vianco, P. T.; Johnson, M. H.; Goldammer, S.

    2011-10-09T23:59:59.000Z

    Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC). The ruggedness of a multipurpose Ti-Cu-Pt-Au stack has continued to benefit fabrication and reliability in state-of-theart modules. Space optimization is described, preserving miniaturization of critical spaces and component pads. Additional soldering details are also presented, including trends with solder-stop materials. Feature compensation becomes a simple step in the normal manufacturing flow which enables exact targeting of desired feature sizes. In addition, fine details of the manufacturing process, including ion milling, will be discussed. We will discuss full long-term aging results and structural details that reinforce the reliability and function. Different thin film materials for specific applications can be exploited for additional capabilities such as filters and other integral components. Cross sections verify the results shown. This successful integration of thin films on LTCC points to higher frequencies which require finer lines and spaces. Advancements of these applications become possible due to the associated progression of smaller skin depth and thinner metallic material.

  1. Nanostructured nickel doped ?-V{sub 2}O{sub 5} thin films for supercapacitor applications

    SciTech Connect (OSTI)

    Jeyalakshmi, K. [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India); Vijayakumar, S. [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India); Purushothaman, K.K. [Department of Physics, TRP Engineering College, Trichy (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India)

    2013-07-15T23:59:59.000Z

    Graphical abstract: - Highlights: • Nanorod with pores has been observed for 5 wt.% nickel doped ?-V{sub 2}O{sub 5} thin films. • Film with 5 wt.% of nickel exhibits a specific capacitance of 417 F g{sup ?1}. • These films exhibit high energy density. • The charge transfer resistance is 103 ?. - Abstract: Interesting thin film electrodes of nickel doped vanadium pentoxide with different levels of doping (2.5–10 wt.%) are prepared on FTO and glass substrate at 300 °C using sol–gel spin coating method. The structural and morphological studies are made to understand the nature of the surface of the thin films. The electrochemical characteristics have been investigated through cyclic voltammetry and ac impedance spectroscopy measurements. The doping of nickel with ?-V{sub 2}O{sub 5} has led to enhanced intercalation and deintercalation of ions. ?-V{sub 2}O{sub 5} films with 5 wt.% of Ni exhibit the maximum specific capacitance of 417 F/g at a scan rate of 5 mV/s, with a good cyclic stability making it a promising candidate for supercapacitor application.

  2. Electrochemical behavior of potentiodynamically deposited cobalt oxyhydroxide (CoOOH) thin films for supercapacitor application

    SciTech Connect (OSTI)

    Jagadale, A.D., E-mail: jagadaleajay99@gmail.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India); Dubal, D.P. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India)] [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India)

    2012-03-15T23:59:59.000Z

    Graphical abstract: Scanning electron micrograph (SEM) images of cobalt oxyhydroxide thin film at (a) 2000 Multiplication-Sign and (b) 10,000 Multiplication-Sign magnifications. Highlights: Black-Right-Pointing-Pointer Simple method for the synthesis of CoOOH thin films. Black-Right-Pointing-Pointer Supercapacitor with maximum specific capacitance of 449 F g{sup -1}. Black-Right-Pointing-Pointer High charge/discharge efficiency. -- Abstract: In the present study, we report, for the first time, the synthesis of cobalt oxyhydroxide thin films on inexpensive stainless steel substrate using potentiodynamic electrodeposition method. These films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM) techniques. The orthorhombic crystal structure was revealed by the X-ray diffraction study. The FT-IR spectrum confirmed the formation of cobalt oxyhydroxide. The SEM studies showed the nanoflakes-like morphology with an average thickness of 100 nm. The cyclic voltammetry study of the cobalt oxyhydroxide films in 1 M KOH showed maximum specific capacitance of 449 F g{sup -1} at scan rate of 5 mV s{sup -1}.

  3. Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films

    SciTech Connect (OSTI)

    Savara, Aditya, E-mail: savaraa@ornl.gov [Chemical Sciences Division, Oak Ridge National Lab, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States)

    2014-03-15T23:59:59.000Z

    Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ?15–30 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 × 10{sup ?7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defects—some of which are correlated with another phase that forms (“phase B”), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

  4. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    SciTech Connect (OSTI)

    Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Técnico (IST), 1049-001 Lisbon (Portugal)

    2013-11-14T23:59:59.000Z

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  5. Properties of zirconia thin films deposited by laser ablation

    SciTech Connect (OSTI)

    Cancea, V. N. [Department of Physics, University of Craiova, Craiova 200585 (Romania); Filipescu, M.; Colceag, D.; Dinescu, M. [Department of Lasers, National Institute for Laser, Plasma and Radiation Physics, Magurele 077125 (Romania); Mustaciosu, C. [Horia Hulubei National Institute of Physics and Nuclear Engineering, Magurele, Bucharest (Romania)

    2013-11-13T23:59:59.000Z

    Zirconia thin films have been deposited by laser ablation of a ceramic ZrO{sub 2} target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (?=193 nm, ?=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm{sup ?2}. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

  6. Polycrystalline thin-film solar cells and modules

    SciTech Connect (OSTI)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01T23:59:59.000Z

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  7. Polycrystalline thin-film solar cells and modules

    SciTech Connect (OSTI)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01T23:59:59.000Z

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  8. Shape variation of micelles in polymer thin films

    SciTech Connect (OSTI)

    Zhou, Jiajia, E-mail: zhou@uni-mainz.de; Shi, An-Chang, E-mail: shi@mcmaste.ca [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)] [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

    2014-01-14T23:59:59.000Z

    The equilibrium properties of block copolymer micelles confined in polymer thin films are investigated using self-consistent field theory. The theory is based on a model system consisting of AB diblock copolymers and A homopolymers. Two different methods, based on the radius of gyration tensor and the spherical harmonics expansion, are used to characterize the micellar shape. The results reveal that the morphology of micelles in thin films depends on the thickness of the thin films and the selectivity of the confining surfaces. For spherical (cylindrical) micelles, the spherical (cylindrical) symmetry is broken by the presence of the one-dimensional confinement, whereas the top-down symmetry is broken by the selectivity of the confining surfaces. Morphological transitions from spherical or cylindrical micelles to cylinders or lamella are predicted when the film thickness approaches the micellar size.

  9. Method of improving field emission characteristics of diamond thin films

    DOE Patents [OSTI]

    Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

    1999-01-01T23:59:59.000Z

    A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

  10. Method of improving field emission characteristics of diamond thin films

    DOE Patents [OSTI]

    Krauss, A.R.; Gruen, D.M.

    1999-05-11T23:59:59.000Z

    A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

  11. A comparison of thick film and thin film traffic stripes

    E-Print Network [OSTI]

    Keese, Charles J

    1952-01-01T23:59:59.000Z

    Striys. . . Pigmented Bitusmn Stripes . Asphalt %uilt-Upa Striye vith Pigmented Portland Cement Mortar Cover Course 38 . ~ 41 Thin Film Stripes Used for Comparison Results of Comparing Thick Film Stripes and Thin Film Paint Stripes . ~ ~ ~ ~ ~ 43... was aspbaltio oonorets. The pavement in Test Areas 2y 3p and 4 vas portland cesmnh ooncrete, Two test areas (3 and 4) vere located in such manner as to provide uninterrupted flow of traffic over tbs entire length of the test area. The other two test areas (1...

  12. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03T23:59:59.000Z

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  13. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

    1998-02-03T23:59:59.000Z

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  14. Study of Martensitic Phase transformation in a NiTiCu Thin Film...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Phase transformation in a NiTiCu Thin Film Shape Memory Alloy Using Photoelectron Emission Microscopy. Study of Martensitic Phase transformation in a NiTiCu Thin Film Shape...

  15. Tax Credits Give Thin-Film Solar a Big Boost | Department of...

    Broader source: Energy.gov (indexed) [DOE]

    Thin-Film Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSol will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery...

  16. The development of a thin-film rollforming process for pharmaceutical continuous manufacturing

    E-Print Network [OSTI]

    Slaughter, Ryan (Ryan R.)

    2013-01-01T23:59:59.000Z

    In this thesis, a continuous rollforming process for the folding of thin-films was proposed and studied as a key step in the continuous manufacturing of pharmaceutical tablets. HPMC and PEG based polymeric thin-films were ...

  17. PID Failure of c-Si and Thin-Film Modules and Possible Correlation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents...

  18. Epoxy/Single Walled Carbon Nanotube Nanocomposite Thin Films for Composites Reinforcement

    E-Print Network [OSTI]

    Warren, Graham

    2010-07-14T23:59:59.000Z

    This work is mainly focused upon the preparation, processing and evaluation of mechanical and material properties of epoxy/single walled carbon nanotube (SWCNT) nanocomposite thin films. B-staged epoxy/SWCNT nanocomposite thin films at 50% of cure...

  19. High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing

    E-Print Network [OSTI]

    Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

    2008-01-01T23:59:59.000Z

    One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

  20. Adsorption of iso-/n-butane on an Anatase Thin Film: A Molecular...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    iso-n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study. Adsorption of iso-n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study....

  1. Influence of samaria doping on the resistance of ceria thin films...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    doping on the resistance of ceria thin films and its implications to the planar oxygen sensing devices. Influence of samaria doping on the resistance of ceria thin films and...

  2. Generation of low work function, stable compound thin films by laser ablation

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  3. Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals Probed by Femtosecond Transient Absorption and Reflectivity. Carrier Dynamics in a-Fe2O3 (0001) Thin Films and...

  4. Two-color Laser Desorption of Nanostructured MgO Thin Films....

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two-color Laser Desorption of Nanostructured MgO Thin Films. Two-color Laser Desorption of Nanostructured MgO Thin Films. Abstract: Neutral magnesium atom emission from...

  5. Initiated chemical vapor deposition of polymeric thin films : mechanism and applications

    E-Print Network [OSTI]

    Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

    2005-01-01T23:59:59.000Z

    Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

  6. Iron Oxide-Gold Core-Shell Nanoparticles and Thin-Film Assembly...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oxide-Gold Core-Shell Nanoparticles and Thin-Film Assembly. Iron Oxide-Gold Core-Shell Nanoparticles and Thin-Film Assembly. Abstract: This paper reports findings of an...

  7. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

    SciTech Connect (OSTI)

    Gessert, T. A.

    2010-09-01T23:59:59.000Z

    Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

  8. Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film

    SciTech Connect (OSTI)

    Park, Seungil [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Yong Ji, Hyung; Jun Kim, Myeong; Hyeon Peck, Jong [Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Kim, Keunjoo, E-mail: kimk@chonbuk.ac.kr [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-02-17T23:59:59.000Z

    We investigated the growth mechanism of amorphous silicon thin films by implementing hot-wire chemical vapor deposition and fabricated thin film solar cell devices. The fabricated cells showed efficiencies of 7.5 and 8.6% for the samples without and with the rear-reflector decomposed by sputtering, respectively. The rear-reflector enhances the quantum efficiency in the infrared spectral region from 550 to 750?nm. The more stable quantum efficiency of the sample with the inclusion of a rear-reflector than the sample without the rear-reflector due to the bias effect is related to the enhancement of the short circuit current.

  9. Barium ferrite thin film media with perpendicular c-axis orientation and small grain size

    E-Print Network [OSTI]

    Laughlin, David E.

    Barium ferrite thin film media with perpendicular c-axis orientation and small grain size Zailong, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 Barium ferrite thin films with perpendicular c conditions. The c-axis orientation of barium ferrite thin films is most sensitive to the oxygen partial

  10. An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a)

    E-Print Network [OSTI]

    Chen, Ray

    An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a) Bulang Li, and Xinghua for publication 16 February 2000 We have demonstrated the operation of a thin-film thermo-optical beam deflector in a three-layer optical planar waveguide. The fabricated waveguide beam deflector consists of a thin-film Si

  11. Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

  12. Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*

    E-Print Network [OSTI]

    1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

  13. Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells

    E-Print Network [OSTI]

    Pulfrey, David L.

    Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells D.L. Pulfrey*, J. Dell): pulfrey@ece.ubc.ca ABSTRACT Cadmium telluride thin-film solar cells are now commercially available be attainable. 1. INTRODUCTION Thin film solar cells based on polycrystalline CdTe have been investigated

  14. EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Ceder, Gerbrand

    EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1; * Corresponding author: buonassisi@mit.edu; ABSTRACT We investigate earth abundant materials for thin- film solar cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar

  15. LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle

    E-Print Network [OSTI]

    Sites, James R.

    LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film

  16. Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells

    E-Print Network [OSTI]

    Van Stryland, Eric

    Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells Qiumei Bian in the fabrication and assembly of thin film solar cells. Using a femtosecond (fs) laser, we selectively removed a unique scheme to ablate the indium tin-oxide layer for the fabrication of thin film solar cells

  17. DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

  18. Plasmonic enhancement of thin-film solar cells using gold-black C.J. Fredricksena

    E-Print Network [OSTI]

    Peale, Robert E.

    Plasmonic enhancement of thin-film solar cells using gold-black coatings C.J. Fredricksena , D. R thin-film amorphous-silicon solar cells enhance the short-circuit current by 20% over a broad spectrum and locally enhance the field strength. Keywords: plasmonics, thin-film, solar cell, metallic nanoparticles

  19. Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell

    E-Print Network [OSTI]

    Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic­4]. In this context, a basic idea is to periodically texture the metallic back reflector of a thin-film solar cell

  20. DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME

    E-Print Network [OSTI]

    Hart, Gus

    DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME ULTRAVIOLET (1.6-35 NM deposition and characterization of reactively-sputtered uranium nitride thin films. I also report optical.1 Application 1 1.2 Optical Constants 2 1.3 Project Focus 7 2 Uranium Nitride Thin Films 8 2.1 Sputtering 8 2

  1. Josephson junction in a thin film V. G. Kogan, V. V. Dobrovitski, and J. R. Clem

    E-Print Network [OSTI]

    Mints, Roman G.

    Josephson junction in a thin film V. G. Kogan, V. V. Dobrovitski, and J. R. Clem Ames Laboratory The phase difference (y) for a vortex at a line Josephson junction in a thin film attenuates at large was normal to the film faces unlike traditional thin-film large- area Josephson junctions in which

  2. Metal-black scattering centers to enhance light harvesting by thin-film solar cells

    E-Print Network [OSTI]

    Peale, Robert E.

    Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

  3. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

    1993-01-01T23:59:59.000Z

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  4. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices

    SciTech Connect (OSTI)

    Martin U. Pralle; James E. Carey

    2010-07-31T23:59:59.000Z

    SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

  5. Stress and Moisture Effects on Thin Film Buckling Delamination

    E-Print Network [OSTI]

    Volinsky, Alex A.

    ­2 GPa compres- sive residual stresses were sputter deposited on top of thin (below 100 nm) copper superlayer with com- pressive residual stress was sputter deposited on top of the films in order to help Mechanics 2006 Abstract Deposition processes control the properties of thin films; they can also introduce

  6. Thin film cracking and ratcheting caused by temperature cycling

    E-Print Network [OSTI]

    Suo, Zhigang

    Thin film cracking and ratcheting caused by temperature cycling M. Huang and Z. Suo Mechanical caused by ratcheting in an adjacent ductile layer. For example, on a silicon die directly attached corners. Aided by cycling temperature, the shear stresses cause ratcheting in the aluminum pads

  7. Perovskite phase thin films and method of making

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

    2000-01-01T23:59:59.000Z

    The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

  8. Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films

    E-Print Network [OSTI]

    Shahriar, Selim

    MRSEC Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films NSF Grant # 1121262 A. U. Adler of varying oxygen partial pressure. Oxygen exchange was confirmed by 18O tracer diffusion (time of carrier content vs. pO2) analysis should be applicable for studying the underlying carrier generation

  9. Critical fields in ferromagnetic thin films: Identification of four regimes

    E-Print Network [OSTI]

    Otto, Felix

    Critical fields in ferromagnetic thin films: Identification of four regimes Rub´en Cantero­film elements is a paradigm for a multi­scale pattern­forming system. On one hand, there is a material length functional ceases to be positive definite. The degenerate subspace consists of the "unstable modes

  10. Method of preparing thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

    1997-01-01T23:59:59.000Z

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  11. Preparation and characterization of TL-based superconducting thin films

    E-Print Network [OSTI]

    Wang, Pingshu

    1995-01-01T23:59:59.000Z

    A simple method for growth of Tl-based superconducting thin films is described. In this method, the precursor was prepared in a vacuum chamber by deposition of Ba, Ca and Cu metals or a Ba-Ca alloy and Cu metal. The precursor was then oxidized...

  12. Method of preparing thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, D.K.; Arnold, C. Jr.

    1997-11-25T23:59:59.000Z

    Novel hybrid thin film electrolyte is described, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1}cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  13. Method for double-sided processing of thin film transistors

    DOE Patents [OSTI]

    Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

    2008-04-08T23:59:59.000Z

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  14. Front and backside processed thin film electronic devices

    DOE Patents [OSTI]

    Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI); Yuan, Hao-Chih (Lakewood, CO); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI)

    2012-01-03T23:59:59.000Z

    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  15. Front and backside processed thin film electronic devices

    DOE Patents [OSTI]

    Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

    2010-10-12T23:59:59.000Z

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  16. Chemical analysis of thin films at Sandia National Laboratories

    SciTech Connect (OSTI)

    Tallant, D.R.; Taylor, E.L.

    1980-05-01T23:59:59.000Z

    The characterization of thin films produced by chemical and physical vapor deposition requires special analytical techniques. When the average compositions of the films are required, dissolution of the thin films and measurement of the concentrations of the solubilized species is the appropriate analytical approach. In this report techniques for the wet chemical analysis of thin films of Si:Al, P/sub 2/O/sub 5/:SiO/sub 2/, B/sub 2/O/sub 3/:SiO/sub 2/, TiB/sub x/ and TaB/sub x/ are described. The analyses are complicated by the small total quantities of these analytes present in the films, the refractory characters of these analytes, and the possibility of interferences from the substrates on which the films are deposited. Etching conditions are described which dissolve the thin films without introducing interferences from the substrates. A chemical amplification technique and inductively coupled plasma atomic emission spectrometry are shown to provide the sensitivity required to measure the small total quantities (micrograms to milligrams) of analytes present. Also the chemical analysis data has been used to calibrate normal infrared absorption spectroscopy to give fast estimates of the phosphorus and/or boron dopant levels in thin SiO/sub 2/ films.

  17. Micromachined thin-film gas flow sensor for microchemical reactors

    E-Print Network [OSTI]

    Besser, Ronald S.

    Micromachined thin-film gas flow sensor for microchemical reactors W C Shin and R S Besser New applications not practical before such as highly compact, non-invasive pressure sensors, accelerometers and gas power consumption, fast response, and low-cost batch production [1-4]. Spurred by the development

  18. Thin Films and the Systems-Driven Approach

    SciTech Connect (OSTI)

    Zweibel, K.

    2005-01-01T23:59:59.000Z

    A systems-driven approach is used to discern tradeoffs between cost and efficiency improvements for various thin-film module technologies and designs. Prospects for reduced system cost via such strategies are enhanced as balance-of-systems costs decline, and some strategies are identified for greater research focus.

  19. Long-wave models of thin film fluid dynamics

    E-Print Network [OSTI]

    A. J. Roberts

    1994-11-04T23:59:59.000Z

    Centre manifold techniques are used to derive rationally a description of the dynamics of thin films of fluid. The derived model is based on the free-surface $\\eta(x,t)$ and the vertically averaged horizontal velocity $\\avu(x,t)$. The approach appears to converge well and has significant differences from conventional depth-averaged models.

  20. Polycrystalline thin-film technology: Recent progress in photovoltaics

    SciTech Connect (OSTI)

    Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

    1991-12-01T23:59:59.000Z

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  1. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Jamer M.; Sterbinsky G.; Assaf, B.; Arena, D.; Heiman, D.

    2014-12-07T23:59:59.000Z

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value. (auth)

  2. Low Cost Thin Film Building-Integrated Photovoltaic Systems

    SciTech Connect (OSTI)

    Dr. Subhendu Guha; Dr. Jeff Yang

    2012-05-25T23:59:59.000Z

    The goal of the program is to develop 'LOW COST THIN FILM BUILDING-INTEGRATED PV SYSTEMS'. Major focus was on developing low cost solution for the commercial BIPV and rooftop PV market and meet DOE LCOE goal for the commercial market segment of 9-12 cents/kWh for 2010 and 6-8 cents/kWh for 2015. We achieved the 2010 goal and were on track to achieve the 2015 goal. The program consists of five major tasks: (1) modules; (2) inverters and BOS; (3) systems engineering and integration; (4) deployment; and (5) project management and TPP collaborative activities. We successfully crossed all stage gates and surpassed all milestones. We proudly achieved world record stable efficiencies in small area cells (12.56% for 1cm2) and large area encapsulated modules (11.3% for 800 cm2) using a triple-junction amorphous silicon/nanocrystalline silicon/nanocrystalline silicon structure, confirmed by the National Renewable Energy Laboratory. We collaborated with two inverter companies, Solectria and PV Powered, and significantly reduced inverter cost. We collaborated with three universities (Syracuse University, University of Oregon, and Colorado School of Mines) and National Renewable Energy Laboratory, and improved understanding on nanocrystalline material properties and light trapping techniques. We jointly published 50 technical papers in peer-reviewed journals and International Conference Proceedings. We installed two 75kW roof-top systems, one in Florida and another in New Jersey demonstrating innovative designs. The systems performed satisfactorily meeting/exceeding estimated kWh/kW performance. The 50/50 cost shared program was a great success and received excellent comments from DOE Manager and Technical Monitor in the Final Review.

  3. The origin of white luminescence from silicon oxycarbide thin films

    SciTech Connect (OSTI)

    Nikas, V.; Gallis, S., E-mail: sgalis@us.ibm.com; Huang, M.; Kaloyeros, A. E. [College of Nanoscale Sciences and Engineering, State University of New York, Albany, New York 12203 (United States); Nguyen, A. P. D.; Stesmans, A.; Afanas'ev, V. V. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)

    2014-02-10T23:59:59.000Z

    Silicon oxycarbide (SiC{sub x}O{sub y}) is a promising material for achieving strong room-temperature white luminescence. The present work investigated the mechanisms for light emission in the visible/ultraviolet range (1.5–4.0?eV) from chemical vapor deposited amorphous SiC{sub x}O{sub y} thin films, using a combination of optical characterizations and electron paramagnetic resonance (EPR) measurements. Photoluminescence (PL) and EPR studies of samples, with and without post-deposition passivation in an oxygen and forming gas (H{sub 2} 5 at.?% and N{sub 2} 95 at.?%) ambient, ruled out typical structural defects in oxides, e.g., Si-related neutral oxygen vacancies or non-bridging oxygen hole centers, as the dominant mechanism for white luminescence from SiC{sub x}O{sub y}. The observed intense white luminescence (red, green, and blue emission) is believed to arise from the generation of photo-carriers by optical absorption through C-Si-O related electronic transitions, and the recombination of such carriers between bands and/or at band tail states. This assertion is based on the realization that the PL intensity dramatically increased at an excitation energy coinciding with the E{sub 04} band gaps of the material, as well as by the observed correlation between the Si-O-C bond density and the PL intensity. An additional mechanism for the existence of a blue component of the white emission is also discussed.

  4. Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10?nm devices

    SciTech Connect (OSTI)

    Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au; Jolley, G.; Umana-Membreno, G. A.; Antoszewski, J.; Faraone, L. [Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009 (Australia)

    2014-08-28T23:59:59.000Z

    Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10?nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10?nm regime.

  5. Buried anode lithium thin film battery and process for forming the same

    DOE Patents [OSTI]

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2004-10-19T23:59:59.000Z

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  6. Characterization Of Superconducting Samples With SIC System For Thin Film Developments: Status And Recent Results

    SciTech Connect (OSTI)

    Phillips, H. Lawrence [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Reece, Charles E. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Valente-Feliciano, Anne-Marie [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Xiao, Binping [Brookhaven National Lab, Upton, NY (United States); Eremeev, Grigory V. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

    2014-02-01T23:59:59.000Z

    Within any thin film development program directed towards SRF accelerating structures, there is a need for an RF characterization device that can provide information about RF properties of small samples. The current installation of the RF characterization device at Jefferson Lab is Surface Impedance Characterization (SIC) system. The data acquisition environment for the system has recently been improved to allow for automated measurement, and the system has been routinely used for characterization of bulk Nb, films of Nb on Cu, MgB{sub 2}, NbTiN, Nb{sub 3}Sn films, etc. We present some of the recent results that illustrate present capabilities and limitations of the system.

  7. Enhanced electrochromic property of nickel hydroxide thin films prepared by anodic deposition

    SciTech Connect (OSTI)

    Chigane, Masaya; Ishikawa, Masami (Osaka Municipal Technical Research Inst. (Japan). Dept. of Inorganic Chemistry)

    1994-12-01T23:59:59.000Z

    Nickel hydroxide and nickel oxide thin films have received much attention as electrochromic (EC) materials, particularly as the materials for a complementary counterlayer against an EC tungsten oxide layer in smart window systems. Nickel hydroxide thin films were prepared onto transparent conductive tin oxide (NESA) substrates by potentiostatic electrolysis of a nickel amine complex solution at various potentials (0.6 to 1.5 V vs. Ag/AgCl). Nickel hydroxide thin film (F0.7) obtained at relatively lower anodic potential (0.7 V) showed enhanced electrochromism between colorless and dark brown in a sodium borate buffer solution at pH 12; the absorption spectrum in the colored (oxidized) state was broadened in the visible and near-infrared region compared with the nickel hydroxide films prepared at the higher anodic potential (1.1 V). characterization of the films revealed that crystal structure of F0.7 is assigned to [alpha]-Ni(OH)[sub 2], and that its electrochromism is based on the reversible oxidation to hexagonal [gamma][sub 2]-2NiO[sub 2] [center dot] NiOOH structure. Composite nickel hydroxide film, i.e., by the electrolytic deposition at 1.1 V followed by that at 0.7 V, showed electrochromic property similar to F0.7 and its durability in repeated redox cycles were much improved in comparison with that of F0.7. Electrochromic properties in switching performance of this composite nickel hydroxide film were investigated.

  8. Diamond Thin Films Handbook David S. Dandy

    E-Print Network [OSTI]

    Dandy, David

    ..................................................................................10 A. Calculation of diamond surface structures and energetics .................................................................................................36 2. Reactor pressure ...........................................................................................48 VI. Reactor scale modeling

  9. Thin film battery and method for making same

    DOE Patents [OSTI]

    Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

    1994-01-01T23:59:59.000Z

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

  10. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1999-02-09T23:59:59.000Z

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  11. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1997-10-07T23:59:59.000Z

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  12. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1997-10-07T23:59:59.000Z

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  13. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1999-02-09T23:59:59.000Z

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  14. Thin-Film Reliability Trends Toward Improved Stability: Preprint

    SciTech Connect (OSTI)

    Jordan, D. C.; Kurtz, S. R.

    2011-07-01T23:59:59.000Z

    Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

  15. Thin film battery and method for making same

    DOE Patents [OSTI]

    Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

    1994-08-16T23:59:59.000Z

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

  16. TI--CR--AL--O thin film resistors

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solana Beach, CA)

    2000-01-01T23:59:59.000Z

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  17. Thin-Film Reliability Trends Toward Improved Stability

    SciTech Connect (OSTI)

    Jordan, D. C.; Kurtz, S. R.

    2011-01-01T23:59:59.000Z

    Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

  18. Scanning tunneling microscopy/spectroscopy of picene thin films formed on Ag(111)

    SciTech Connect (OSTI)

    Yoshida, Yasuo, E-mail: yyoshida@issp.u-tokyo.ac.jp; Yokosuka, Takuya; Hasegawa, Yukio, E-mail: hasegawa@issp.u-tokyo.ac.jp [The Institute of Solid State Physics, The University of Tokyo, Kashiwa 277-8581 (Japan); Yang, Hung-Hsiang [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Huang, Hsu-Sheng; Guan, Shu-You; Su, Wei-Bin; Chang, Chia-Seng [Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan (China); Yanagisawa, Susumu [Department of Physics and Earth Science Department, University of the Ryukyus, 1 Nishihara, Okinawa 903-0213 (Japan); Lin, Minn-Tsong [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Hoffmann, Germar [The Institute of Solid State Physics, The University of Tokyo, Kashiwa 277-8581 (Japan); Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2014-09-21T23:59:59.000Z

    Using ultrahigh-vacuum low-temperature scanning tunneling microscopy and spectroscopy combined with first principles density functional theory calculations, we have investigated structural and electronic properties of pristine and potassium (K)-deposited picene thin films formed in situ on a Ag(111) substrate. At low coverages, the molecules are uniformly distributed with the long axis aligned along the [112{sup ¯}] direction of the substrate. At higher coverages, ordered structures composed of monolayer molecules are observed, one of which is a monolayer with tilted and flat-lying molecules resembling a (11{sup ¯}0) plane of the bulk crystalline picene. Between the molecules and the substrate, the van der Waals interaction is dominant with negligible hybridization between their electronic states; a conclusion that contrasts with the chemisorption exhibited by pentacene molecules on the same substrate. We also observed a monolayer picene thin film in which all molecules were standing to form an intermolecular ? stacking. Two-dimensional delocalized electronic states are found on the K-deposited ? stacking structure.

  19. Preparation of redox polymer cathodes for thin film rechargeable batteries

    DOE Patents [OSTI]

    Skotheim, T.A.; Lee, H.S.; Okamoto, Yoshiyuki.

    1994-11-08T23:59:59.000Z

    The present invention relates to the manufacture of thin film solid state electrochemical devices using composite cathodes comprising a redox polymer capable of undergoing oxidation and reduction, a polymer solid electrolyte and conducting carbon. The polymeric cathode material is formed as a composite of radiation crosslinked polymer electrolytes and radiation crosslinked redox polymers based on polysiloxane backbones with attached organosulfur side groups capable of forming sulfur-sulfur bonds during electrochemical oxidation.

  20. Synthesis of thin films and materials utilizing a gaseous catalyst

    DOE Patents [OSTI]

    Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

    2013-10-29T23:59:59.000Z

    A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

  1. Optical sensors and multisensor arrays containing thin film electroluminescent devices

    DOE Patents [OSTI]

    Aylott, Jonathan W. (Ann Arbor, MI); Chen-Esterlit, Zoe (Ann Arbor, MI); Friedl, Jon H. (Ames, IA); Kopelman, Raoul (Ann Arbor, MI); Savvateev, Vadim N. (Ames, IA); Shinar, Joseph (Ames, IA)

    2001-12-18T23:59:59.000Z

    Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

  2. Fabrication and testing of thermoelectric thin film devices

    SciTech Connect (OSTI)

    Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

    1996-03-01T23:59:59.000Z

    Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

  3. Substrates suitable for deposition of superconducting thin films

    DOE Patents [OSTI]

    Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

    1993-01-01T23:59:59.000Z

    A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  4. Formation of thin-film resistors on silicon substrates

    DOE Patents [OSTI]

    Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

    1988-11-01T23:59:59.000Z

    The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

  5. Thin film adhesion by nanoindentation-induced superlayers. Final report

    SciTech Connect (OSTI)

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01T23:59:59.000Z

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  6. Study of Copper Diffusion Through Ruthenium Thin Film by Photoemission

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide Thin Films.AdministrationAerosol

  7. Electrical properties of quench-condensed thin film

    E-Print Network [OSTI]

    Lee, Kyoungjin

    2009-05-15T23:59:59.000Z

    cryopump is used for high vacuum pumping. Materials to be evaporated (evaporant) are held by evaporation sources, like a crucible, boat or wire coil. Tungsten wire is commonly used as an evaporation source for materials like aluminum, nickel, chromium... films were evaporated at room temperature with NRC 3114 commercial thermal evaporator. We deposited aluminum and nickel thin films in a form of bar with shadow mask. A commercial tungsten basket was used for the evaporation source. The evaporation...

  8. Comparative studies of optical and elastic properties of ZrO{sub 2} thin films prepared under normal and oblique incidence deposition geometries

    SciTech Connect (OSTI)

    Sarkar, P., E-mail: piyali.sarkar4@gmail.com; Tokas, R. B., E-mail: piyali.sarkar4@gmail.com; Jena, S., E-mail: piyali.sarkar4@gmail.com; Thakur, S., E-mail: piyali.sarkar4@gmail.com; Sahoo, N. K., E-mail: piyali.sarkar4@gmail.com [Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2014-04-24T23:59:59.000Z

    Oblique angle deposited optical thin films have attracted recent researcher’s interest because of their attractive optical, micro-structural, mechanical properties and more importantly because of their great potential in achieving tunability in refractive index. These properties in turn make it important in case of designing different optical devices. In the present work, ZrO{sub 2} thin films have been deposited on fused silica substrate by electron beam evaporation technique in normal as well as oblique angle deposition configurations. Optical properties, especially refractive index of the films have been estimated by fitting the measured transmission spectra with suitable theoretical dispersion models. Atomic force microscopy has been employed to characterize morphological properties of samples. The elastic properties of both the films are estimated by Atomic Force Acoustic Microscopy, a new and highly sensitive technique for thin films.

  9. Crystallization characteristics and chemical bonding properties of nickel carbide thin film nanocomposites

    E-Print Network [OSTI]

    Furlan, Andrej; Hultman, Lars; Jansson, Ulf; Magnuson, Martin

    2014-01-01T23:59:59.000Z

    The crystal structure and chemical bonding of magnetron-sputtering deposited nickel carbide Ni$_{1-x}$C$_{x}$ (0.05$\\leq$x$\\leq$0.62) thin films have been investigated by high-resolution X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and soft X-ray absorption spectroscopy. By using X-ray as well as electron diffraction, we found carbon-containing hcp-Ni (hcp-NiC$_{y}$ phase), instead of the expected rhombohedral-Ni$_{3}$C. At low carbon content (4.9 at\\%) the thin film consists of hcp-NiC$_{y}$ nanocrystallites mixed with a smaller amount of fcc-NiC$_{x}$. The average grain size is about 10-20 nm. With the increase of carbon content to 16.3 at\\%, the film contains single-phase hcp-NiC$_{y}$ nanocrystallites with expanded lattice parameters. With further increase of carbon content to 38 at\\%, and 62 at\\%, the films transform to X-ray amorphous materials with hcp-NiC$_{y}$ and fcc-NiC$_{x }$ nanodomain structures in an amorphous carbon-rich matrix. Ram...

  10. Uncooled thin film infrared imaging device with aerogel thermal isolation: Deposition and planarization techniques

    SciTech Connect (OSTI)

    Ruffner, J.A.; Clem, P.G.; Tuttle, B.A.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States); Sriram, C.S. [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Chemical and Nuclear Engineering; Bullington, J.A. [AMMPEC, Inc., Albuquerque, NM (United States)

    1998-04-01T23:59:59.000Z

    The authors have successfully integrated a thermally insulating silica aerogel thin film into a new uncooled monolithic thin film infrared (IR) imaging device. Compared to other technologies (bulk ceramic and microbridge), use of an aerogel layer provides superior thermal isolation of the pyroelectric imaging element from the relatively massive heat sinking integrated circuit. This results in significantly higher thermal and temporal resolutions. They have calculated noise equivalent temperature differences of 0.04--0.10 C from a variety of Pb{sub x}Zr{sub y}Ti{sub 1{minus}y}O{sub 3} (PZT) and Pb{sub x}La{sub 1{minus}x}Zr{sub y}Ti{sub 1{minus}y}O{sub 3} (PLZT) pyroelectric imaging elements in monolithic structures. In addition, use of aerogels results in an easier, less expensive fabrication process and a more robust device. Fabrication of these monolithic devices entails sol-gel deposition of the aerogel, sputter deposition of the electrodes, and solution chemistry deposition of the pyroelectric imaging elements. Uniform pyroelectric response is achieved across the device by use of appropriate planarization techniques. These deposition and planarization techniques are described. Characterization of the individual layers and monolithic structure using scanning electron microscopy, atomic force microscopy and Byer-Roundy techniques also is discussed.

  11. Subnanometer Porous Thin Films by the Co-assembly of Nanotube Subunits and Block Copolymers

    SciTech Connect (OSTI)

    Xu, Ting; Zhao, Nana; Ren, Feng; Hourani, Rami; Lee, Ming Tsang; Shu, Jessica Y; Mao, Samuel; Helms, Brett A

    2011-01-01T23:59:59.000Z

    Porous thin films containing subnanometer channels oriented normal to the surface exhibit unique transport and separation properties and can serve as selective membranes for separation and protective coatings. While molecularly defined nanoporous inorganic and organic materials abound, generating flexible nanoporous thin films with highly aligned channels over large areas has been elusive. Here, we developed a new approach where the growth of cyclic peptide nanotubes can be directed in a structural framework set by the self-assembly of block copolymers. By conjugating polymers to cyclic peptides, the subunit of an organic nanotube can be selectively solubilized in one copolymer microdomain. The conjugated polymers also mediate the interactions between nanotube and local medium and guide the growth of nanotubes in a confined geometry. This led to subnanometer porous membranes containing high-density arrays of through channels. This new strategy takes full advantage of nanoscopic assembly of BCPs and the reversibility of organic nanotube growth and circumvents impediments associated with aligning and organizing high aspect ratio nano-objects normal to the surface. Furthermore, the hierarchical coassembly strategy described demonstrates the feasibility of synchronizing multiple self-assembly processes to achieve hierarchically structured soft materials with molecular level control.

  12. Electrically Modulated Thin Film Dynamics Controlling Bubble Manipulation in Microfluidic Confinement

    E-Print Network [OSTI]

    Debapriya Chakraborty; Suman Chakraborty

    2014-12-03T23:59:59.000Z

    Thin film dynamics and associated instability mechanisms have triggered a wide range of scientific innovations, as attributed to their abilities of creating fascinating patterns over small scales. Here, we demonstrate a new thin film instability phenomenon governed by electro-mechanics and hydrodynamics over interfacial scales in a narrow fluidic confinement. We first bring out the essential physics of this instability mechanism, in consideration with the fact that under the action of axial electrical field in a confined microfluidic environment, perturbations may be induced on the interfaces of thin corner films formed adjacent to the walls of a microchannel, leading to the inception of ordered lateral structures. A critical electric field exists beyond which these structures from the walls of the confinement intermingle to evolve into localized gas pockets in the form of bubbles. These bubbles do not remain static with further changes in electric field, but undergo a sequence of elongation-deformation-breakup episode in a dynamically evolving manner. By elucidating the complex interplay of electro-hydrodynmic forces and surface tension, we offer further insights into a new paradigm of interfacial instability mediated controlled microbubble manipulation for on-chip applications, bearing far-ranging scientific and technological consequences in executing designed fluidic operations in confined miniaturized environment.

  13. Proof of Concept Thin Films and Multilayers Toward Enhanced Field Gradients in SRF Cavities

    SciTech Connect (OSTI)

    Lukaszew, R.A.; Beringer, D.; Roach, W.M.; Eremeev, G.V.; Valente-Feliciano, A-M.; Reece, C.E.; Xi, X.

    2013-09-01T23:59:59.000Z

    Due to the very shallow penetration depth of the RF fields, SRF properties are inherently a surface phenomenon involving a material thickness of less than 1 micron thus opening up the possibility of using thin film coatings to achieve a desired performance. The challenge has been to understand the dependence of the SRF properties on the detailed characteristics of real surfaces and then to employ appropriate techniques to tailor these surface properties for greatest benefit. Our aim is to achieve gradients >100 MV/m and no simple material is known to be capable of sustaining this performance. A theoretical framework has been proposed which could yield such behavior [1] and it requires creation of thin film layered structures. I will present our systematic studies on such proof-of-principle samples. Our overarching goal has been to build a basic understanding of key nano-scale film growth parameters for materials that show promise for SRF cavity multilayer coatings and to demonstrate the ability to elevate the barrier for vortex entry in such layered structures above the bulk value of Hc1 for type-II superconductors and thus to sustain higher accelerating fields.

  14. New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells

    E-Print Network [OSTI]

    Wang, DongLin

    2014-01-01T23:59:59.000Z

    Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-performance thin-film solar cells. In our strategy, a flat active layer is adopted for avoiding electrical degradation, and an optimization algorithm is applied to seek for an optimized light trapping structure for the best optical benefit. As an example, we show that the efficiency of a flat a-Si:H thin-film solar cell can be promoted close to the certified highest value. It is also pointed out that, by choosing appropriate dielectric materials with high refractive index (>3) and high transmissivity in wavelength region of 350nm-800nm, the conversion efficiency of solar cells can be further enhanced.

  15. Effect of annealing temperature on the supercapacitor behaviour of ?-V{sub 2}O{sub 5} thin films

    SciTech Connect (OSTI)

    Jeyalakshmi, K. [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India)] [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India); Vijayakumar, S.; Nagamuthu, S. [Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram 624302 (India)] [Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram 624302 (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram 624302 (India)

    2013-02-15T23:59:59.000Z

    Graphical abstract: Display Omitted Highlights: ? Structural, optical, supercapacitor properties of ?-V{sub 2}O{sub 5} thin films are reported. ? Influence of annealing temperature on ?-V{sub 2}O{sub 5} thin films have been studied. ? Film annealed at 300 °C exhibit lower charge transfer resistance. -- Abstract: Vanadium pentoxide thin films are prepared via sol–gel spin coating method. The films coated on FTO and glass substrates are treated at different temperatures ranging from 250 °C to 400 °C. The structural, optical and electrochemical investigations are made. X-ray diffraction analysis shows the film to be composed of V{sub 2}O{sub 5} in ?-phase up to annealing temperature of 350 °C and at 400 °C the structural transformation to ?-phase is observed. FTIR spectrum shows the formation of V-O bond. The SEM images reveal the formation of nanopores. Optical absorption studies indicate a band gap of 2.2–2.4 eV. The supercapacitor behaviour is studied using cyclic voltammetery technique and electrochemical impedance analysis. The vanadium pentoxide films annealed at 300 °C for an hour exhibits a maximum specific capacitance of 346 F g{sup ?1} at a scan rate of 5 mV s{sup ?1}.

  16. International Conference on Technological Advances of Thin Films & Surface Coatings (Thin Films 2008), Singapore, 13-16 July 2008

    E-Print Network [OSTI]

    Cirkva, Vladimir

    were examined by XRD, UV-Vis, AFM and SEM. Compared with pure titania, the UV-Vis spectra of some Mn by the degradation of mono-chloroacetic acid in a microwave field using mercury electrodeless discharge lamp. The degradation efficiency of MCAA on some Mn+ doped TiO2 was higher than those of pure TiO2. Thin Films 212 #12;

  17. Methods for fabricating thin film III-V compound solar cell

    DOE Patents [OSTI]

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09T23:59:59.000Z

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  18. Spin hall effect in paramagnetic thin films

    E-Print Network [OSTI]

    Xu, Huachun

    2009-05-15T23:59:59.000Z

    the principle of Light Emitting Diode, but changed the design to a coplanar structure with two p-n junctions. A Light-Emitting Diode [27] consists of a chip of semiconductor materials doped with impurities to create a p-n junction. When the LED is forward...

  19. Kinetics of CO adsorption on epitaxial (111)Cu on (111)Pd thin films

    SciTech Connect (OSTI)

    Oral, B.; Kothari, R.; Vook, R.W.

    1989-05-01T23:59:59.000Z

    CO adsorption has been studied on (111)Cu/Pd thin-film surfaces grown epitaxially on mica in UHV of base pressure 5 x 10/sup -11/ Torr. Auger electron spectroscopy investigations of the growth of Cu on (111)Pd films showed that layer growth occurred. The Kelvin probe, work function method was used to monitor the CO adsorption at 298 K as a function of Cu overlayer thickness. It was found that very thin Cu overlayers had a drastic effect on saturation CO coverage: one monolayer of copper reduced the saturation CO coverage by /similar to/95%. For the pure (111)Pd thin-film surface, the data showed that the rate of CO adsorption changes when the CO fractional coverage approaches /similar to/0.4. This result is most likely due to the previously reported change in CO superlattice structure that occurs with increasing coverage. The kinetic adsorption data for various bilayers were interpreted in terms of a first-order Kisliuk mobile precursor model.

  20. Nanoassembly control and optical absorption in CdTe-ZnO nanocomposite thin films

    SciTech Connect (OSTI)

    Potter, B. G. Jr. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Beal, R. J.; Allen, C. G. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States)

    2012-02-01T23:59:59.000Z

    The spatial distribution of CdTe nanoparticles within a ZnO thin-film matrix was manipulated using a dual-source, sequential radio-frequency (RF)-sputter deposition technique to produce nanocomposite materials with tuned spectral absorption characteristics. The relative substrate exposure time to each sputtering source was used to control the semiconductor phase connectivity, both within the film plane and along the film growth direction, to influence the degree of photocarrier confinement and the resulting optical transition energies exhibited by the CdTe phase. Significant changes (up to {Delta}E {approx_equal} 0.3 eV) in the absorption onset energy for the CdTe nanoparticle ensemble were produced through modification in the extended structure of the semiconductor phase. Raman spectroscopy, cross-sectional transmission electron microscopy, and x-ray diffraction were used to confirm the phase identity of the CdTe and ZnO and to characterize the nanostructures produced in these composite films. Isochronal annealing for 5 min at temperatures up to 800 deg. C further indicated the potential to improve film crystallinity as well as to establish the post-deposition thermal processing limits of stability for the semiconductor phase. The study highlights the significance of ensemble behavior as a means to influence quantum-scale semiconductor optical characteristics of import to the use of such materials as the basis for a variety of optoelectronic devices, including photosensitized heterojunction components in thin film photovoltaics.

  1. Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

    SciTech Connect (OSTI)

    Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it; Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Chikoidze, E.; Dumont, Y. [GEMaC, Université de Versailles St. Quentin en Yvelines-CNRS, Versailles (France); Fanciulli, M. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Milano (Italy)

    2014-05-07T23:59:59.000Z

    R-Fe-O (R?=?rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er{sub 2}O{sub 3} and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO{sub 3} and ErFe{sub 2}O{sub 4} phases develop following subsequent thermal annealing processes at 850?°C in air and N{sub 2}. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

  2. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

    SciTech Connect (OSTI)

    Kumar, Avishek, E-mail: avishek.kumar@nus.edu.sg, E-mail: dalapatig@imre.a-star.edu.sg [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Law, Felix; Widenborg, Per I. [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 (Singapore); Dalapati, Goutam K., E-mail: avishek.kumar@nus.edu.sg, E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Aberle, Armin G. [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 and Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

    2014-11-01T23:59:59.000Z

    n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30??m in width, and with high Hall mobility of about 71.5?cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18??m with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900?MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

  3. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26T23:59:59.000Z

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  4. Electrochemical kinetics of thin film vanadium pentoxide cathodes for lithium batteries

    E-Print Network [OSTI]

    Mui, Simon C., 1976-

    2005-01-01T23:59:59.000Z

    Electrochemical experiments were performed to investigate the processing-property-performance relations of thin film vanadium pentoxide cathodes used in lithium batteries. Variations in microstructures were achieved via ...

  5. E-Print Network 3.0 - active thin films Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Western Ontario a JOINT presentation of the Summary: and conducting thin films for optoelectronic applications from carbon nanotubes and graphene" ABSTRACT: Low... . The interest...

  6. Study of GaN:Eu3+ Thin Films Deposited by Metallorganic

    E-Print Network [OSTI]

    McKittrick, Joanna

    as an advantageous architecture for transparent electrodes in optoelectronic devices due primarily to high characteristics of electrodes in optoelectronic devices and in supercapactiors, we introduced oxide thin films

  7. Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics

    E-Print Network [OSTI]

    Ross, April Denise, 1977-

    2005-01-01T23:59:59.000Z

    Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and ...

  8. Synthesis of nanomesh, thin film nanocomposite, nanocomposite membranes and synthesis of potassium ion selective membrane electrodes

    E-Print Network [OSTI]

    Singh, Jayant K.

    Synthesis of nanomesh, thin film nanocomposite, nanocomposite membranes and synthesis of potassium and naofibers, which has potential use in protection of agricultural products from hailing. We developed

  9. abrasion-resistant thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  10. al-cu-fe thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  11. alendronate-hydroxyapatite thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  12. as2s3 thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  13. amorphous silicon thin-film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    amorphous silicon Kanicki, Jerzy 17 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  14. ag-in-se thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  15. Alta Devices Develops World Record Setting Thin-Film Solar Cell

    Office of Energy Efficiency and Renewable Energy (EERE)

    EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

  16. Phase Transitions and High-Voltage Electrochemical Behavior of LiCoO2 Thin Films Grown by Pulsed Laser Deposition

    E-Print Network [OSTI]

    Ceder, Gerbrand

    Laser Deposition H. Xia,a L. Lu,b,z Y. S. Meng,c and G. Cederc, * a Advanced Materials for Micro behavior of LiCoO2 thin-film cathodes prepared by pulsed laser deposition are studied for charging voltages- discharge curves. Ex situ X-ray diffraction measurements confirm structural changes and a phase transition

  17. Energetic condensation growth of Nb thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Krishnan, M.; Valderrama, E.; James, C.; Zhao, X.; Spradlin, J.; Feliciano, A-M Valente; Phillips, L.; Reece, C. E.; Seo, K.; Sung, Z. H.

    2012-03-01T23:59:59.000Z

    This paper describes energetic condensation growth of Nb films using a cathodic arc plasma, whose 60–120 eV ions penetrate a few monolayers into the substrate and enable sufficient surface mobility to ensure that the lowest energy state (crystalline structure with minimal defects) is accessible to the film. Heteroepitaxial films of Nb were grown on ?-plane sapphire and MgO crystals with good superconducting properties and crystal size (10??mm × 20??mm ) limited only by substrate size. The substrates were heated to temperatures of up to 700°C and coated at 125°C, 300°C, 500°C, and 700°C . Film thickness was varied from ?0.25???m to >3???m . Residual resistivity ratio (RRR) values (up to a record (RRR)=587 on MgO and (RRR)=328 on ?-sapphire) depend strongly on substrate annealing and deposition temperatures. X-ray diffraction spectra and pole figures reveal that RRR increases as the crystal structure of the Nb film becomes more ordered, consistent with fewer defects and, hence, longer electron mean-free path. A transition from Nb(110) to Nb(100) orientation on the MgO(100) lattice occurs at higher temperatures. This transition is discussed in light of substrate heating and energetic condensation physics. Electron backscattered diffraction and scanning electron microscope images complement the XRD data.

  18. Growth and characterization of Pt-protected Gd{sub 5}Si{sub 4} thin films

    SciTech Connect (OSTI)

    Hadimani, R. L., E-mail: hadimani@iastate.edu; Jiles, D. C. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Mudryk, Y.; Prost, T. E. [Materials and Engineering Physics Program, Ames Laboratory, U.S. Department of Energy, Ames, Iowa 50011 (United States); Pecharsky, V. K.; Gschneidner, K. A. [Materials and Engineering Physics Program, Ames Laboratory, U.S. Department of Energy, Ames, Iowa 50011 (United States); Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011 (United States)

    2014-05-07T23:59:59.000Z

    Successful growth and characterization of thin films of giant magnetocaloric Gd{sub 5}(Si{sub x}Ge{sub 1?x}){sub 4} were reported in the literature with limited success. The inherent difficulty in producing this complex material makes it difficult to characterize all the phases present in the thin films of this material. Therefore, thin film of binary compound of Gd{sub 5}Si{sub 4} was deposited by pulsed laser deposition. It was then covered with platinum on the top of the film to protect against any oxidation when the film was exposed to ambient conditions. The average film thickness was measured to be approximately 350?nm using a scanning electron microscopy, and the composition of the film was analyzed using energy dispersive spectroscopy. X-ray diffraction analysis indicates the presence of Gd{sub 5}Si{sub 4} orthorhombic structure along with Gd{sub 5}Si{sub 3} secondary phase. The transition temperature of the film was determined from magnetic moment vs. temperature measurement. The transition temperature was between 320 and 345?K which is close to the transition temperature of the bulk material. Magnetic moment vs. magnetic field measurement confirmed that the film was ferromagnetic below 342?K.

  19. Theoretical simulations of protective thin film Fabry-Pérot filters for integrated optical elements of diode pumped alkali lasers (DPAL)

    SciTech Connect (OSTI)

    Quarrie, L., E-mail: Lindsay.Quarrie@l-3com.com, E-mail: lindsay.o.quarrie@gmail.com [New Mexico Institute of Mining and Technology, Department of Materials Engineering, 801 LeRoy Place, Socorro, NM 87801 (United States); Air Force Research Laboratory, AFRL/RDLC Laser CoE, 3550 Aberdeen Avenue SE, Kirtland AFB, NM 87117-5776 (United States)

    2014-09-15T23:59:59.000Z

    The lifetime of Diode-Pumped Alkali Lasers (DPALs) is limited by damage initiated by reaction of the glass envelope of its gain medium with rubidium vapor. Rubidium is absorbed into the glass and the rubidium cations diffuse through the glass structure, breaking bridging Si-O bonds. A damage-resistant thin film was developed enhancing high-optical transmission at natural rubidium resonance input and output laser beam wavelengths of 780 nm and 795 nm, while protecting the optical windows of the gain cell in a DPAL. The methodology developed here can be readily modified for simulation of expected transmission performance at input pump and output laser wavelengths using different combination of thin film materials in a DPAL. High coupling efficiency of the light through the gas cell was accomplished by matching the air-glass and glass-gas interfaces at the appropriate wavelengths using a dielectric stack of high and low index of refraction materials selected to work at the laser energies and protected from the alkali metal vapor in the gain cell. Thin films as oxides of aluminum, zirconium, tantalum, and silicon were selected allowing the creation of Fabry-Perot optical filters on the optical windows achieving close to 100% laser transmission in a solid optic combination of window and highly reflective mirror. This approach allows for the development of a new whole solid optic laser.

  20. Diamond Magnetometry of Superconducting Thin Films

    E-Print Network [OSTI]

    A. Waxman; H. Schlussel; D. Groswasser; V. M. Acosta; L. -S. Bouchard; D. Budker; R. Folman

    2014-02-05T23:59:59.000Z

    In recent years diamond magnetometers based on the nitrogen-vacancy (NV) center have been of considerable interest for magnetometry applications at the nanoscale. An interesting application which is well suited for NV centers is the study of nanoscale magnetic phenomena in superconducting materials. We employ the magnetic sensitivity of NV centers in diamond to interrogate the magnetic properties of a thin-layer yttrium barium copper oxide (YBCO) superconductor. Using fluorescence-microscopy methods and samples integrated with an NV sensor on a microchip, we measure the temperature of phase transition in the layer to be 70.0(2) K, and the penetration field of vortices to be 46(4) G. We observe the pinning of the vortices in the layer at 65 K, and estimate their density after cooling the sample in a ~ 10 G field to be 0.45(1) \\mu m^{-2}. These measurements are done with a 10 nm thick NV layer, so that high spatial resolution may be enabled in the future. Based on these results, we anticipate that this magnetometer could be useful for imaging the structure and dynamics of vortices. As an outlook, we present a fabrication method for a superconductor chip designed for this purpose.

  1. B{sub 4}C thin films for neutron detection

    SciTech Connect (OSTI)

    Hoeglund, Carina [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Birch, Jens; Jensen, Jens; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Andersen, Ken; Hall-Wilton, Richard [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Bigault, Thierry; Buffet, Jean-Claude; Correa, Jonathan; Esch, Patrick van; Guerard, Bruno; Piscitelli, Francesco [Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Khaplanov, Anton [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Vettier, Christian [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); European Synchrotron Radiation Facility, BP 220, FR-380 43 Grenoble Cedex 9 (France); Vollenberg, Wilhelmus [Vacuum, Surfaces and Coatings Group (TE/VSC), CERN, CH-1211 Geneva 23 (Switzerland)

    2012-05-15T23:59:59.000Z

    Due to the very limited availability of {sup 3}He, new kinds of neutron detectors, not based on {sup 3}He, are urgently needed. Here, we present a method to produce thin films of {sup 10}B{sub 4}C, with maximized detection efficiency, intended to be part of a new generation of large area neutron detectors. B{sub 4}C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from {sup nat}B{sub 4}C and {sup 10}B{sub 4}C targets in an Ar discharge, using an industrial deposition system. The films were characterized with scanning electron microscopy, elastic recoil detection analysis, x-ray reflectivity, and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8 A/s and substrate temperature of 400 deg. C result in films with a density close to bulk values and good adhesion to film thickness above 3 {mu}m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m{sup 2} of 1 {mu}m thick {sup 10}B{sub 4}C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness, number of layers, neutron wavelength, and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas, which for a full-scale detector could be in total {approx}1000 m{sup 2} of two-side coated Al-blades with {approx}1 {mu}m thick {sup 10}B{sub 4}C films.

  2. Thin film reactions on alloy semiconductor substrates

    SciTech Connect (OSTI)

    Olson, D.A.

    1990-11-01T23:59:59.000Z

    The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

  3. Oriented niobate ferroelectric thin films for electrical and optical devices

    DOE Patents [OSTI]

    Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Chicago, IL)

    2001-01-01T23:59:59.000Z

    Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

  4. Control of magnetization reversal in oriented strontium ferrite thin films

    SciTech Connect (OSTI)

    Roy, Debangsu, E-mail: debangsu@physics.iisc.ernet.in; Anil Kumar, P. S. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India)

    2014-02-21T23:59:59.000Z

    Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al{sub 2}O{sub 3}(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

  5. Laser-induced metallic nanograined thin films processing

    SciTech Connect (OSTI)

    Tosa, Nicoleta, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro; Toadere, Florin, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro; Hojbota, Calin, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro; Tosa, Valer, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath., 400293 Cluj-Napoca (Romania)] [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath., 400293 Cluj-Napoca (Romania)

    2013-11-13T23:59:59.000Z

    A direct laser writing method for designing metallic nanograined thin films is presented. This method takes advantage of photon conversion within a chemical process localized at the focal point. A computer controlled positioning system allows the control of experimental parameters and spatial resolution of the pattern. Spectroscopic investigations reveal variable attenuation of the optical properties in UV-visible range and a spectral imaging processing algorithm simulated the functionality of these films in visible light. This could be an important step for obtaining neutral density attenuators.

  6. Electron cyclotron resonance microwave ion sources for thin film processing

    SciTech Connect (OSTI)

    Berry, L.A.; Gorbatkin, S.M.

    1990-01-01T23:59:59.000Z

    Plasmas created by microwave absorption at the electron cyclotron resonance (ECR) are increasingly used for a variety of plasma processes, including both etching and deposition. ECR sources efficiently couple energy to electrons and use magnetic confinement to maximize the probability of an electron creating an ion or free radical in pressure regimes where the mean free path for ionization is comparable to the ECR source dimensions. The general operating principles of ECR sources are discussed with special emphasis on their use for thin film etching. Data on source performance during Cl base etching of Si using an ECR system are presented. 32 refs., 5 figs.

  7. Photoresponse of Tb{sup 3+} doped phosphosilicate thin films

    SciTech Connect (OSTI)

    Lee, B.L.; Cao, Z. [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering] [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering; Sisk, W.N.; Hudak, J. [Univ. of North Carolina, Charlotte, NC (United States)] [Univ. of North Carolina, Charlotte, NC (United States); Samuels, W.D.; Exarhos, G.J. [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science] [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science

    1997-09-01T23:59:59.000Z

    Phosphosilicate ceramic was doped with Tb{sup 3+} using sol-gel technique to prepare thin films. The films were prepared by spin coating the phosphosilicate sols on SiO{sub x}/indium-tin-oxide/glass substrates. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of applied field and laser energy was linear and showed no sign of saturation. The films exhibited very stable photoresponse under a very high number of laser shots.

  8. Fractal-Mound Growth of Pentacene Thin Films

    E-Print Network [OSTI]

    Serkan Zorba; Yonathan Shapir; Yongli Gao

    2006-10-19T23:59:59.000Z

    The growth mechanism of pentacene film formation on SiO2 substrate was investigated with a combination of atomic force microscopy measurements and numerical modeling. In addition to the diffusion-limited aggregation (DLA) that has already been shown to govern the growth of the ordered pentacene thin films, it is shown here for the first time that the Schwoebel barrier effect steps in and disrupts the desired epitaxial growth for the subsequent layers, leading to mound growth. The terraces of the growing mounds have a fractal dimension of 1.6, indicating a lateral DLA shape. This novel growth morphology thus combines horizontal DLA-like growth with vertical mound growth.

  9. Thin-film electrochemical power cells. Final report

    SciTech Connect (OSTI)

    Owens, B.B.; Smyrl, W.H.

    1991-01-01T23:59:59.000Z

    Fundamental properties of research cells were correlated with the projected performance of full scale power sources, considering both battery and supercapacitor concepts. In addition to establishing the data base for modelling and performance projections, the program had the additional objective of identifying loss mechanisms and degradation reactions, especially those unique to polymer thin film cell designs. Because of the intrinsic high electrode/electrolyte interface areas, interfacial reactions must be understood. Many applications require power under extreme conditions, and low temperature performance needs to be improved.

  10. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr FlickrGuided Self-Assembly of Gold Thin Films Print

  11. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr FlickrGuided Self-Assembly of Gold Thin Films PrintGuided

  12. Chemical solution deposition derived (001)-oriented epitaxial BiFeO{sub 3} thin films with robust ferroelectric properties using stoichiometric precursors (invited)

    SciTech Connect (OSTI)

    Zhang, Qi; Valanoor, Nagarajan; Standard, Owen, E-mail: o.standard@unsw.edu.au [School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia)

    2014-08-14T23:59:59.000Z

    Phase pure bismuth ferrite (BiFeO{sub 3}) thin films with (001)-oriented epitaxial structure are realized on lanthanum strontium manganite (La{sub 0.67}Sr{sub 0.33}MnO{sub 3}) buffered (001)-SrTiO{sub 3} substrates by chemical solution deposition. The annealing process is optimized such that a stoichiometric precursor can be used to accurately control the Bi:Fe ratio. Ferroelectric, dielectric, and resistive switching behaviours are investigated for 40?nm, 70?nm, and 150?nm BFO thin films. While the thinnest film (40?nm) shows very leaky loops, square and fully saturated polarization hysteresis loops are shown for the thicker films. The highest remanent polarization (2P{sub r}?=?100??C/cm{sup 2}) and relative dielectric constant (?{sub r}?=?613) are obtained in the 150?nm BFO thin film. High cycle fatigue tests show that the thick films are resistant to polarization fatigue. Piezoresponse force microscopy results show that the domain structure varies with thickness. Resistive switching and polarization mediated diode effects are also observed. These robust properties suggest that chemical solution deposition derived BiFeO{sub 3} thin films can offer a viable low cost alternative.

  13. Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography: Comparison Of Experiments And Simulation

    SciTech Connect (OSTI)

    Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

    2014-11-21T23:59:59.000Z

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

  14. A non-resonant dielectric metamaterial for enhancement of thin-film solar cells

    E-Print Network [OSTI]

    Omelyanovich, Mikhail; Simovski, Constantin

    2014-01-01T23:59:59.000Z

    Recently, we have suggested dielectric metamaterial composed as an array of submicron dielectric spheres located on top of an amorphous thin-film solar cell. We have theoretically shown that this metamaterial can decrease the reflection and simultaneously can suppress the transmission through the photovoltaic layer because it transforms the incident plane wave into a set of focused light beams. This theoretical concept has been strongly developed and experimentally confirmed in the present paper. Here we consider the metamaterial for oblique angle illumination, redesign the solar cell and present a detailed experimental study of the whole structure. In contrast to our precedent theoretical study we show that our omnidirectional light-trapping structure may operate better than the optimized flat coating obtained by plasma-enhanced chemical vapor deposition.

  15. Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

    DOE Patents [OSTI]

    Wu, Xuanzhi (Golden, CO); Sheldon, Peter (Lakewood, CO)

    2000-01-01T23:59:59.000Z

    A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

  16. Effect of annealing atmosphere on phase formation and electrical characteristics of bismuth ferrite thin films

    SciTech Connect (OSTI)

    Simoes, A.Z., E-mail: alezipo@yahoo.com [Universidade Federal de Itajuba, UNIFEI - CAMPUS ITABIRA, Rua Sao Paulo, 377, Bairro Amazonas, CEP: 35900-373 Itabira, MG (Brazil); Riccardi, C.S.; Dos Santos, M.L. [Laboratorio Interdisciplinar em Ceramica, Departamento de Fisico-Quimica, Instituto de Quimica Universidade Estadual Paulista, Bairro: Quitandinha, CEP: 14800-900 Araraquara, SP (Brazil); Garcia, F. Gonzalez [Universidade Federal de Itajuba, UNIFEI - CAMPUS ITABIRA, Rua Sao Paulo, 377, Bairro Amazonas, CEP: 35900-373 Itabira, MG (Brazil); Longo, E.; Varela, J.A. [Laboratorio Interdisciplinar em Ceramica, Departamento de Fisico-Quimica, Instituto de Quimica Universidade Estadual Paulista, Bairro: Quitandinha, CEP: 14800-900 Araraquara, SP (Brazil)

    2009-08-05T23:59:59.000Z

    Bismuth ferrite thin films were deposited on Pt/Ti/SiO{sub 2}/Si substrates by a soft chemical method and spin-coating technique. The effect of annealing atmosphere (air, N{sub 2} and O{sub 2}) on the structure and electrical properties of the films are reported. X-ray diffraction analysis reveals that the film annealed in air atmosphere is a single-phase perovskite structure. The films annealed in air showed better crystallinity and the presence of a single BFO phase leading to lower leakage current density and superior ferroelectric hysteresis loops at room temperature. In this way, we reveal that BFO film crystallized in air atmosphere by the soft chemical method can be useful for practical applications, including nonvolatile digital memories, spintronics and data-storage media.

  17. Crystallization and phase transformations in amorphous NiTi thin films for microelectromechanical systems

    SciTech Connect (OSTI)

    Lee, Hoo-Jeong; Ramirez, Ainissa G. [Department of Mechanical Engineering, Yale University, New Haven, Connecticut 06520 (United States)

    2004-08-16T23:59:59.000Z

    Amorphous sputtered nickel-titanium thin films were deposited onto micromachined silicon-nitride membranes and subjected to heating and cooling conditions. Their associated microstructure was monitored directly and simultaneously with in situ transmission electron microscopy. These electron-transparent membranes constrained the NiTi films and rendered it possible for observation of the complete transformation cycle, which includes: the crystallization of the amorphous phase to austenite phase (cubic B2 structure) with heating; and the conversion of austenite (B2) to martensite (monoclinic B19{sup '} structure) with cooling. Electron micrographs show the nucleation and growth of grains occurs at a temperature of 470 deg. C and at a rate that indicates a polymorphic transformation. The onset of martensitic transformation occurs between 25 and 35 deg. C. Calorimetric measurements are consistent with the observed crystallization.

  18. Nonlinear Photoemission Electron Micrographs of Plasmonic Nanoholes in Gold Thin Films

    SciTech Connect (OSTI)

    Gong, Yu; Joly, Alan G.; El-Khoury, Patrick Z.; Hess, Wayne P.

    2014-11-06T23:59:59.000Z

    Nonlinear photoemission electron microscopy of isolated nanoholes in gold thin films map propagating surface plasmon polaritons (SPPs) launched from the lithographically patterned plasmonic structures. A damped sinusoidal elongated ring-like photoemission beat pattern is observed from the nanoholes, following low angle of incidence irradiation of these structures with sub-15 fs 780 nm laser pulses. A notable agreement between finite difference time domain simulations and experiment corroborates our assignment of the observed photoemission patterns to SPPs launched from isolated nanoholes and probed through nonlinear photoemission. We also demonstrate how the efficiency of coupling light waves into isolated plasmonic holes can be tuned by varying hole diameter. In this regard, a simple intuitive geometrical model, which accounts for the observed and simulated diameter dependent plasmonic response, is proposed. Overall, this study paves the way for designing nanohole assemblies where optical coupling and subsequent plasmon propagation can be rationally controlled through 2D SPP interferometry

  19. Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor

    E-Print Network [OSTI]

    Nominanda, Helinda

    2004-01-01T23:59:59.000Z

    The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

  20. Thin film deposition of barium strontium oxide by rf magnetron sputtering

    SciTech Connect (OSTI)

    Liu Yan; Day, Christopher M.; Little, Scott A.; Jin, Feng [Department of Physics and Astronomy, Ball State University, Muncie, Indiana 47306 (United States)

    2006-11-15T23:59:59.000Z

    Barium strontium oxide [(BaSr)O] thin films approximately 1 {mu}m in thickness were deposited on tungsten substrates using rf magnetron sputter deposition for thermionic cathode applications. Three substrate temperatures ranging from 25 to 700 deg. C were used in the deposition processes to create oxide films with different surface morphologies and crystalline structures. The films were characterized with scanning electron microscopy and their surface morphologies were correlated to their thermionic emission properties. The results showed that the surface morphology and crystalline structure of the oxide films strongly affected the emission properties. The oxide film deposited at the lowest substrate temperature of 25 deg. C showed a rough surface and a crystalline structure consisting of nanograins. At higher substrate temperatures, the oxide films exhibited smooth surfaces and close-packed crystalline structures with larger grains. The work function of the oxide films was reduced and the emission current density increased as a result of the increase in the growth temperature. The (BaSr)O film made at 700 deg. C exhibited the lowest work function of 1.57 eV and the largest emission current density of 1.60 A/cm{sup 2} at 1198 K under an electrical field of 0.88 V/{mu}m. The emission current density and the work function of the (BaSr)O thin film cathodes were stable over the testing period of 8 h. Compared to the traditional cathode fabrication process, which involves the coating of carbonates followed by an activation process, rf magnetron sputtering has a greater ability to control the deposition parameters, which makes it a valuable alternative technique to fabricate oxide cathodes.

  1. Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment

    SciTech Connect (OSTI)

    Trassinelli, M., E-mail: martino.trassinelli@insp.jussieu.fr; Marangolo, M.; Eddrief, M.; Etgens, V. H.; Gafton, V.; Hidki, S.; Lacaze, E.; Lamour, E.; Prigent, C.; Rozet, J.-P.; Steydli, S.; Zheng, Y.; Vernhet, D. [CNRS, UMR 7588, Institut des NanoSciences de Paris (INSP), F-75005 Paris (France); Sorbonne Universités, UPMC Univ. Paris 06, UMR 7588, INSP, F-75005 Paris (France)

    2014-02-24T23:59:59.000Z

    We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition, with a consequent suppression of thermal hysteresis without any significant perturbation on the other structural and magnetic properties. In particular, the irradiated film keeps the giant magnetocaloric effect at room temperature opening new perspective on magnetic refrigeration technology for everyday use.

  2. Residual Stress Relaxation and Microstructure in ZnO Thin Films Istem Ozena

    E-Print Network [OSTI]

    Yanikoglu, Berrin

    to be eliminated during deposition. Introduction In this study, the decay of the residual stressesResidual Stress Relaxation and Microstructure in ZnO Thin Films Istem Ozena and Mehmet Ali Gulgunb. a istem@sabanciuniv.edu b m-gulgun@sabanciuniv.edu Keywords: ZnO, thin films, residual stress

  3. NONLINEAR SAW PROPAGATION IN THIN-FILM SYSTEMS WITH RESIDUAL STRESS* R. E. Kumon

    E-Print Network [OSTI]

    harmonics. I. INTRODUCTION AND MOTIVATION The thin-film deposition process can create large residualNONLINEAR SAW PROPAGATION IN THIN-FILM SYSTEMS WITH RESIDUAL STRESS* R. E. Kumon National Institute is the residual stress. The effective elas- tic constants and density are given by Ceff ijkl = Cijkl(1 - eres

  4. Influence of Ba content on grain size and dynamics of crystallization in barium ferrite thin films

    E-Print Network [OSTI]

    Laughlin, David E.

    Influence of Ba content on grain size and dynamics of crystallization in barium ferrite thin films of the crystallization process, which ultimately determines the grain size, were studied in barium ferrite thin films. Rapid thermal annealing was used to crystallize the amorphous as-deposited barium ferrite films

  5. Study of lithium diffusion in RF sputtered Nickel/Vanadium mixed oxides thin films

    E-Print Network [OSTI]

    Artuso, Florinda

    Study of lithium diffusion in RF sputtered NickelÁ/Vanadium mixed oxides thin films F. Artuso a lithium insertion inside RF sputtered Ni/V mixed oxides thin films have been investigated employing, showed three steps clearly involved in the intercalation mechanism of lithium in the oxide films: (i

  6. Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave

    E-Print Network [OSTI]

    Afshari, Ehsan

    Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave School Micro Devices, Inc. Greensboro, North Carolina, USA Abstract--This paper presents Lithium Niobate (LN this platform, we demonstrate, on a black Y136 cut Lithium Niobate thin-film, one-port high-order width

  7. The effect of stress on the dielectric properties of barium strontium titanate thin films

    E-Print Network [OSTI]

    Suo, Zhigang

    The effect of stress on the dielectric properties of barium strontium titanate thin films T. M Barium strontium titanate thin films are being developed as capacitors in dynamic random access memories to their large permittivities, barium strontium titan- ate BST bulk ceramics have long been used to make high

  8. High tunability barium strontium titanate thin films for rf circuit applications

    E-Print Network [OSTI]

    York, Robert A.

    High tunability barium strontium titanate thin films for rf circuit applications N. K. Pervez,a) P) Large variations in the permittivity of rf magnetron sputtered thin-film barium strontium titanate have/cm. © 2004 American Institute of Physics. [DOI: 10.1063/1.1818724] Barium strontium titanate (BST) is a solid

  9. Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron

    E-Print Network [OSTI]

    York, Robert A.

    Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron Abstract-- Barium strontium titanate is a solid solution perovskite with a field-dependent permittivity.7 MV/cm. I. INTRODUCTION In recent years there has been much interest in thin-film barium strontium

  10. Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Fabrication, Characterization, and

    E-Print Network [OSTI]

    Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Raleigh, NC-27695-7914, USA. Email:jayeshnath@ieee.org Abstract -- Discrete Barium Strontium Titanate (BST, capacitors, BST, ferroelectric, thin-film, barium strontium titanate, bandpass filter, IP3, ACPR, temperature

  11. Self-similar solutions for a fractional thin film equation governing hydraulic fractures

    E-Print Network [OSTI]

    Boyer, Edmond

    Self-similar solutions for a fractional thin film equation governing hydraulic fractures C. Imbert equation governing hydraulic fractures are constructed. One of the boundary con- ditions, which accounts, 35R11, 35C06 Keywords: Hydraulic fractures, higher order equation, thin films, fractional Laplacian

  12. Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries

    E-Print Network [OSTI]

    Sadoway, Donald Robert

    Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries Patrick E. Trapa to be stable over a wide temperature range and voltage window. Solid-state, thin-film batteries comprised triflate-doped POEM-g-PDMS, which exhibited solid-like mechanical behavior, were nearly identical to those

  13. Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

    DOE Patents [OSTI]

    Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

    2013-06-11T23:59:59.000Z

    Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

  14. Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)

    SciTech Connect (OSTI)

    Ambrose Wolf; Ken Peterson; Matt O'Keefe; Wayne Huebner; Bill Kuhn

    2012-04-19T23:59:59.000Z

    Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti-Cu-Pt-Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor - a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti-Cu-Pt-Au), or a specially tailored thin film material (e.g. Ti-Cu-Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

  15. High temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding

    E-Print Network [OSTI]

    Bowers, John

    -W-N diffusion barrier. A thermoelectric material, thin film ErAs:InGaAlAs metal/semiconductor nanocomposite temperature to 840 K for this material and the results show the thermoelectric power factor multiplied material characterization of semiconductor thin films for thermoelectric power generation, photovoltaic

  16. High-Temperature Thermoelectric Characterization of IIIV Semiconductor Thin Films by Oxide Bonding

    E-Print Network [OSTI]

    -temperature thermoelectric charac- terization of thin-film III­V semiconductor materials that suffer from the side- effect-temperature surface passivation, and metallization with a Ti-W-N diffusion barrier. A thermoelectric material, thin-temperature material characterization of semiconductor thin films for thermoelectric power generation, photovoltaic

  17. Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films

    E-Print Network [OSTI]

    Walker, D. Greg

    Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films A. Bulusu and D. G. Walker1 Interdisciplinary Program in Material Science Vanderbilt University Nashville on device characteristics of 1D and 2D thin film superlattices whose applications include thermoelectric

  18. High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability For EmbeddedDecoupling

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability, the capacitance density would be much lower. Newer capacitor concepts such as supercapacitors can overcome and the suitability of the thin film supercapacitors for high-frequency decoupling applications will be discussed. 1

  19. LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin

    E-Print Network [OSTI]

    1 LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared, and readily scalable to larger substrates. Keywords: liquid phase deposition; electrochromic films; thin film

  20. Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells

    E-Print Network [OSTI]

    Fan, Shanhui

    Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells Nicholas P of solar energy conversion be- cause they use thin films of photoactive material and can be manufactured and photocurrent in flexible organic solar cells. We demonstrate that this enhancement is attributed to a broadband

  1. Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells

    E-Print Network [OSTI]

    Rockett, Angus

    Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

  2. Nano-photonic Light Trapping In Thin Film Solar Dennis M. Callahan Jr.

    E-Print Network [OSTI]

    Winfree, Erik

    Nano-photonic Light Trapping In Thin Film Solar Cells Thesis by Dennis M. Callahan Jr. In Partial. Jeremy Munday for helping me get started on the thin-film GaAs project and for all the time we spent to thank Dr. Jonathan Grandidier for working closely with me for a couple years on the nano sphere solar

  3. METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Peale, Robert E.

    METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS by DEEP R surface of thin-film solar cells to improve efficiency. The principle is that scattering, which film solar cell. The particular types of particles investigated here are known as "metal-black", well

  4. EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands

    E-Print Network [OSTI]

    EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands: `Single quote' = menu item, window, or icon "Double quote" = something you type = button you your sample, thin film up, on the dot of epoxy 4. Repeat until all samples are on the puck 5. Flip your

  5. Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films

    E-Print Network [OSTI]

    Ocko, Ben

    Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films Ting Xu, A. V Manuscript Received June 21, 2004 ABSTRACT: An electric field induced sphere-to-cylinder transition in thin. In the absence of an applied electric field, thin films of the asymmetric diblock copolymer consisted of layers

  6. Energy harvesting properties of all-thin-film multiferroic cantilevers Tiberiu-Dan Onuta,1,a)

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Energy harvesting properties of all-thin-film multiferroic cantilevers Tiberiu-Dan Onuta,1,a) Yi 18 November 2011) We have measured electromagnetic energy harvesting properties of all piezoelectric thin film. The harvested peak power at 1 Oe is 0.7 mW/cm3 (RMS) at the resonant frequency (3.8 k

  7. Measuring the fracture toughness of ultra-thin films with application to AlTa coatings

    E-Print Network [OSTI]

    1 Measuring the fracture toughness of ultra-thin films with application to AlTa coatings Yong Xiang Abstract An experimental technique is presented for measuring the fracture toughness of brittle thin films with a focused ion beam and the membranes are pressurized until rupture. The fracture stress of the membrane

  8. Mathematical Model of Charge and Density Distributions in Interfacial Polymerization of Thin Films

    E-Print Network [OSTI]

    Freger, Viatcheslav "Slava"

    Mathematical Model of Charge and Density Distributions in Interfacial Polymerization of Thin Films INTRODUCTION Interfacial polymerization (IP) as a method of prepa- ration of thin film composite (TFC, and waste treatment. IP is also highly suitable for manufacturing polymeric films, such as polyamides

  9. X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films

    E-Print Network [OSTI]

    X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films T. J. Richardsona@lbl.gov Abstract Mixed metal thin films containing magnesium and a first-row transition element exhibit very large and coordination of the magnesium and transition metal atoms during hydrogen absorption were studied using dynamic

  10. Extended light scattering model incorporating coherence for thin-film silicon solar cells

    E-Print Network [OSTI]

    Lenstra, Arjen K.

    Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non potential for light trapping in textured thin film silicon solar cells. VC 2011 American Institute

  11. Plasticity in Cu thin films: an experimental investigation of the effect of microstructure

    E-Print Network [OSTI]

    Plasticity in Cu thin films: an experimental investigation of the effect of microstructure A thesis Author Joost J. Vlassak Yong Xiang Plasticity in Cu thin films: an experimental investigation is constructed. The elastic-plastic behavior of Cu films is studied with emphasis on the effects

  12. High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams

    E-Print Network [OSTI]

    High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams Hyun-throughput residual stress measurements on thin films by means of micromachined cantilever beams and an array of parallel laser beams. In this technique, the film of interest is deposited onto a silicon substrate

  13. Bill Shafarman 1 May 15, 2013 Thin Film Photovoltaics Research at the

    E-Print Network [OSTI]

    Firestone, Jeremy

    Bill Shafarman 1 May 15, 2013 Thin Film Photovoltaics Research at the Institute of Energy of Photovoltaics 2. IEC: History and Capabilities 3. Current Research at IEC #12;Bill Shafarman 2 May 15, 2013 Concentrators #12;Bill Shafarman 5 May 15, 2013 Thin Film Photovoltaics Potential for low cost PV using " a

  14. Comparative study of the mechanical properties of nanostructured thin films on stretchable substrates

    SciTech Connect (OSTI)

    Djaziri, S. [Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Renault, P.-O.; Le Bourhis, E.; Goudeau, Ph., E-mail: Philippe.goudeau@univ-poitiers.fr [Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Faurie, D. [LSPM, (UPR 3407 CNRS), Université Paris 13, Institut Galilée, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Geandier, G. [Institut Jean Lamour (UMR 3079 CNRS), Université de Lorraine, Parc de Saurupt, CS 50840, 54011 NANCY Cedex (France); Mocuta, C.; Thiaudière, D. [Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France)

    2014-09-07T23:59:59.000Z

    Comparative studies of the mechanical behavior between copper, tungsten, and W/Cu nanocomposite based on copper dispersoïd thin films were performed under in-situ controlled tensile equi-biaxial loadings using both synchrotron X-ray diffraction and digital image correlation techniques. The films first deform elastically with the lattice strain equal to the true strain given by digital image correlation measurements. The Cu single thin film intrinsic elastic limit of 0.27% is determined below the apparent elastic limit of W and W/Cu nanocomposite thin films, 0.30% and 0.49%, respectively. This difference is found to be driven by the existence of as-deposited residual stresses. Above the elastic limit on the lattice strain-true strain curves, we discriminate two different behaviors presumably footprints of plasticity and fracture. The Cu thin film shows a large transition domain (0.60% true strain range) to a plateau with a smooth evolution of the curve which is associated to peak broadening. In contrast, W and W/Cu nanocomposite thin films show a less smooth and reduced transition domain (0.30% true strain range) to a plateau with no peak broadening. These observations indicate that copper thin film shows some ductility while tungsten/copper nanocomposites thin films are brittle. Fracture resistance of W/Cu nanocomposite thin film is improved thanks to the high compressive residual stress and the elimination of the metastable ?-W phase.

  15. Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer Encapsulation

    E-Print Network [OSTI]

    Javey, Ali

    Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer report hysteresis-free carbon nanotube thin-film transistors (CNT-TFTs) employing a fluorocarbon polymer (Teflon-AF) as an encapsulation layer. Such fluorocarbon encapsulation improves device uniformity

  16. Electrochemical Behavior and Li Diffusion Study of LiCoO? Thin Film Electrodes Prepared by PLD

    E-Print Network [OSTI]

    Xia, H.

    Preferred c-axis oriented LiCoO? thin films were prepared on the SiO?/Si (SOS) substrates by pulsed laser deposition (PLD). Thin film electrodes without carbon and binder are ideal samples to study the electrochemical ...

  17. HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa

    E-Print Network [OSTI]

    Romeo, Alessandro

    HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

  18. Nonreciprocal dispersion of spin waves in ferromagnetic thin films covered with a finite-conductivity metal

    SciTech Connect (OSTI)

    Mruczkiewicz, M.; Krawczyk, M. [Faculty of Physics, Adam Mickiewicz University in Poznan, Umultowska 85, Pozna? 61-614 (Poland)

    2014-03-21T23:59:59.000Z

    We study the effect of one-side metallization of a uniform ferromagnetic thin film on its spin-wave dispersion relation in the Damon–Eshbach geometry. Due to the finite conductivity of the metallic cover layer on the ferromagnetic film, the spin-wave dispersion relation may be nonreciprocal only in a limited wave-vector range. We provide an approximate analytical solution for the spin-wave frequency, discuss its validity, and compare it with numerical results. The dispersion is analyzed systematically by varying the parameters of the ferromagnetic film, the metal cover layer and the value of the external magnetic field. The conclusions drawn from this analysis allow us to define a structure based on a 30?nm thick CoFeB film with an experimentally accessible nonreciprocal dispersion relation in a relatively wide wave-vector range.

  19. Phase assembly and photo-induced current in CdTe-ZnO nanocomposite thin films

    SciTech Connect (OSTI)

    Beal, R. J.; Kana Kana, J. B. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); Potter, B. G. Jr. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States)

    2012-07-16T23:59:59.000Z

    Sequential radio-frequency sputtering was used to produce CdTe-ZnO nanocomposite thin films with varied semiconductor-phase extended structures. Control of the spatial distribution of CdTe nanoparticles within the ZnO embedding phase was used to influence the semiconductor phase connectivity, contributing to both changes in quantum confinement induced spectral absorption and carrier transport characteristics of the resulting nanocomposite. An increased number density of CdTe particles deposited along the applied field direction produced an enhancement in the photo-induced current observed. These results highlight the opportunity to employ long-range phase assembly as a means to control optoelectronic properties of significant interest for photovoltaic applications.

  20. Thermal annealing characteristics of Si and Mg-implanted GaN thin films

    SciTech Connect (OSTI)

    Chan, J.S.; Cheung, N.W. [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)] [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States); Schloss, L.; Jones, E.; Wong, W.S.; Newman, N.; Liu, X.; Weber, E.R. [Department of Material Science and Mineral Engineering, University of California, Berkeley, California 64720 (United States)] [Department of Material Science and Mineral Engineering, University of California, Berkeley, California 64720 (United States); Gassman, A.; Rubin, M.D. [Lawrence Berkeley Laboratory, 1 Cyclotron Road, University of California, Berkeley, California 64720 (United States)] [Lawrence Berkeley Laboratory, 1 Cyclotron Road, University of California, Berkeley, California 64720 (United States)

    1996-05-01T23:59:59.000Z

    In this letter, we report the results of ion implantation of GaN using {sup 28}Si and {sup 24}Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 10{sup 14} cm{sup {minus}2} Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690{degree}C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. {copyright} {ital 1996 American Institute of Physics.}

  1. Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy

    SciTech Connect (OSTI)

    Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

    2010-07-15T23:59:59.000Z

    The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

  2. Method for transferring thermal energy and electrical current in thin-film electrochemical cells

    DOE Patents [OSTI]

    Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

    2003-05-27T23:59:59.000Z

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  3. Electrochemical deposition and characterization of Ni-P alloy thin films

    SciTech Connect (OSTI)

    Mahalingam, T. [Department of Physics, Alagappa University, Karaikudi, 630 003 (India) and Department of Electrical and Computer Engineering, College of Information Technology, Ajou University, Suwon 443-749 (Korea, Republic of)]. E-mail: maha51@rediffmail.com; Raja, M. [Department of Physics, Alagappa University, Karaikudi, 630 003 (India); Thanikaikarasan, S. [Department of Physics, Alagappa University, Karaikudi, 630 003 (India); Sanjeeviraja, C. [Department of Physics, Alagappa University, Karaikudi, 630 003 (India); Velumani, S. [Departamento de Fisica, ITESM-Campus Monterrey, Nuevo Leon, C.P. 64849 (Mexico); Moon, Hosun [Department of Electrical and Computer Engineering, College of Information Technology, Ajou University, Suwon 443-749 (Korea, Republic of); Kim, Yong Deak [Department of Electrical and Computer Engineering, College of Information Technology, Ajou University, Suwon 443-749 (Korea, Republic of)

    2007-08-15T23:59:59.000Z

    Nickel phosphorus (Ni-P) alloy thin films were prepared by electrodeposition on pre-cleaned copper substrates using a potentiostatic cathodic electrodeposition method from sulfate electrolyte baths at various sodium hypophosphite (NaH{sub 2}PO{sub 2}) concentrations. X-ray diffraction studies reveal polycrystalline cubic alloys at low concentrations of phosphorus (< 13.5 at.%) and these transformed into amorphous alloys at higher concentrations. X-ray photoelectron spectra show the presence of Ni{sub 2}p and P{sub 2}p lines corresponding to their binding energies. Scanning electron microscopic studies reveal spherical shaped grains at low phosphorus contents and modules of cauliflower type morphology at higher phosphorus concentrations. The effects of phosphorus concentration on the crystal structure, composition and morphology are studied and discussed.

  4. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

    SciTech Connect (OSTI)

    Hanyu, Yuichiro, E-mail: y-hanyu@lucid.msl.titech.ac.jp; Domen, Kay [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan)] [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan)] [Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Hiramatsu, Hidenori; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan) [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)] [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan) [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)

    2013-11-11T23:59:59.000Z

    We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300?°C exhibit good operation characteristics; while those annealed at ?400?°C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430?°C. A plausible structural model is suggested.

  5. INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS

    E-Print Network [OSTI]

    Atwater, Harry

    INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

  6. Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a

    E-Print Network [OSTI]

    Alam, Muhammad A.

    Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

  7. Enhancement of optical absorption in thin-film organic solar cells through the excitation of plasmonic modes in metallic gratings

    E-Print Network [OSTI]

    Veronis, Georgios

    Enhancement of optical absorption in thin-film organic solar cells through the excitation 2010 We theoretically investigate the enhancement of optical absorption in thin-film organic solar.1063/1.3377791 Thin-film organic solar cells OSCs are a promising candidate for low-cost energy conversion.1­6 However

  8. THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

  9. Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High efficiency and junction property

    E-Print Network [OSTI]

    Wang, Wei Hua

    Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High-conductor-free organic lead iodide thin film solar cells have been fabricated with a sequential deposition method are comparable to that of the high-efficiency thin-film solar cells. VC 2014 AIP Publishing LLC. [http

  10. Growth of plasma-polymerized thin films by PECVD method and study on their surface and optical characteristics

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    Growth of plasma-polymerized thin films by PECVD method and study on their surface and optical properties of plasma-polymerized organic thin films with various RF power. AFM data showed that the plasma-polymerized. The surface and optical properties of as-grown plasma-polymerized thin films were analyzed by contact angle

  11. Coulomb impurity scattering in topological insulator thin films

    SciTech Connect (OSTI)

    Yin, Gen; Wickramaratne, Darshana; Lake, Roger K., E-mail: rlake@ee.ucr.edu [Department of Electrical Engineering, University of California, Riverside, California 92521 (United States); Zhao, Yuanyuan [Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204 (United States)

    2014-07-21T23:59:59.000Z

    Inter-surface coupling in thin-film topological insulators can reduce the surface state mobility by an order of magnitude in low-temperature transport measurements. The reduction is caused by a reduction in the group velocity and an increased s{sub z} component of the surface-state spin which weakens the selection rule against large-angle scattering. An intersurface potential splits the degenerate bands into a Rashba-like bandstructure. This reduces the intersurface coupling, it largely restores the selection rule against large angle scattering, and the ring-shaped valence band further reduces backscattering by requiring, on average, larger momentum transfer for backscattering events. The effects of temperature, Fermi level, and intersurface potential on the Coulomb impurity scattering limited mobility are analyzed and discussed.

  12. Studies on nickel-tungsten oxide thin films

    SciTech Connect (OSTI)

    Usha, K. S. [Department of Physics, Alagappa University, Karaikudi - 630 004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi - 630 004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi - 630 004 (India)

    2014-10-15T23:59:59.000Z

    Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup ?1} and 1100 cm{sup ?1} correspond to Ni-O vibration and the peak at 860 cm{sup ?1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

  13. Gain properties of dye-doped polymer thin films

    E-Print Network [OSTI]

    Gozhyk, I; Rabbani, H; Djellali, N; Forget, S; Chenais, S; Ulysse, C; Brosseau, A; Gauvin, S; Zyss, J; Lebental, M

    2014-01-01T23:59:59.000Z

    The demonstration of an electrically pumped organic laser remains a major issue of organic optoelectronics for several decades. Nowadays, hybrid pumping seems a promising compromise where the organic material is optically pumped by an electrically pumped inorganic device on chip. This technical solution requires therefore an optimization of the organic gain medium under optical pumping. Here, we report a detailed study of gain features of dye-doped polymer thin films, in particular we introduce the gain efficiency $K$, in order to facilitate comparison between material and experimental conditions. First, we measure the bulk gain by the means of a pump-probe setup, and then present in details several factors which modify the actual gain of the layer, namely the confinement factor, the pump polarization, the molecular anisotropy, and the re-absorption. The usual model to evaluate the gain leads to an overestimation by more than one order of magnitude, which stresses the importance to design the devices accordin...

  14. Room-temperature magnetoelectric multiferroic thin films and applications thereof

    DOE Patents [OSTI]

    Katiyar, Ram S; Kuman, Ashok; Scott, James F.

    2014-08-12T23:59:59.000Z

    The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

  15. Order on disorder: Copper phthalocyanine thin films on technical substrates

    SciTech Connect (OSTI)

    Peisert, H.; Schwieger, T.; Auerhammer, J. M.; Knupfer, M.; Golden, M. S.; Fink, J.; Bressler, P. R.; Mast, M.

    2001-07-01T23:59:59.000Z

    We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20{endash}50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. {copyright} 2001 American Institute of Physics.

  16. Improvement in electrochromic stability of electrodeposited nickel hydroxide thin film

    SciTech Connect (OSTI)

    Natarajan, C.; Matsumoto, H.; Nogami, G. [Kyushu Inst. of Tech., Kitakyushu (Japan). Dept. of Electrical Engineering

    1997-01-01T23:59:59.000Z

    The electrochromic nickel hydroxide thin film was anodically deposited from an aqueous solution. The effect of solution temperature, postheat-treatment temperature, and addition of cadmium on the electrochromic behavior (color/bleach durability cycle, response time, and coloration efficiency of the nickel hydroxide films in NaOH) were investigated. A significant increase in the color/bleach durability cycle from 500 (for the as-deposited film) to more than 5000 cycles (for the heat-treated film) was observed. The addition of cadmium increased the utilization of the active materials. It was found that the coloration efficiency was 40 cm{sup 2}/C and coloration and bleaching response time were 20 to 30 s and 8 to 10 s, respectively. The change in the electrochromic properties with heat-treatment temperature is discussed based on the physical and electrochemical analysis.

  17. Long-laser-pulse method of producing thin films

    DOE Patents [OSTI]

    Balooch, Mehdi (Berkeley, CA); Olander, Donald K. (Berkeley, CA); Russo, Richard E. (Walnut Creek, CA)

    1991-01-01T23:59:59.000Z

    A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

  18. Generation of mirage effect by heated carbon nanotube thin film

    SciTech Connect (OSTI)

    Tong, L. H. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Lim, C. W., E-mail: bccwlim@cityu.edu.hk [USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Department of Civil and Architectural Engineering, City University of Hong Kong, Kowloon, Hong Kong, People’s Republic of China and City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057 (China); Li, Y. C. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhang, Chuanzeng; Quoc Bui, Tinh [Department of Civil Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, D-57076 Siegen (Germany)

    2014-06-28T23:59:59.000Z

    Mirage effect, a common phenomenon in nature, is a naturally occurring optical phenomenon in which lights are bent due to the gradient variation of refraction in the temperature gradient medium. The theoretical analysis of mirage effect generated by heated carbon nanotube thin film is presented both for gas and liquid. Excellent agreement is demonstrated through comparing the theoretical prediction with published experimental results. It is concluded from the theoretical prediction and experimental observation that the mirage effect is more likely to happen in liquid. The phase of deflected optical beam is also discussed and the method for measurement of thermal diffusivity of medium is theoretically verified. Furthermore, a method for measuring the refractive index of gas by detecting optical beam deflection is also presented in this paper.

  19. Monitoring plasma treatment of thin films by surface plasmon resonance

    SciTech Connect (OSTI)

    Laha, Ranjit, E-mail: laharanjit@gmail.com [Department of Physics, National Institute of Technology Raipur, 492010 Raipur (India)] [Department of Physics, National Institute of Technology Raipur, 492010 Raipur (India); Manivannan, A. [US Department of Energy, National Energy Technology Laboratory, Morgantown, West Virginia 26507 (United States)] [US Department of Energy, National Energy Technology Laboratory, Morgantown, West Virginia 26507 (United States); Kasiviswanathan, S. [Department of Physics, Indian Institute of Technology Madras, 600036 Chennai (India)] [Department of Physics, Indian Institute of Technology Madras, 600036 Chennai (India)

    2014-03-15T23:59:59.000Z

    We report the surface plasmon resonance (SPR) measurements during plasma treatment of thin films by an indigenously designed setup. From the measurements on Al (6.3 nm)/Ag (38 nm) bi-layer at a pressure of 0.02 mbar, the SPR position was found to be shifted by ?20° after a plasma treatment of ?7 h. The formation of oxide layers during plasma oxidation was confirmed by glancing angle x-ray diffraction (GXRD) measurements. Combined analysis of GXRD and SPR data confirmed that while top Al layer enables controlling plasma oxidation of Ag, the setup enables monitoring the same. The setup designed is a first of its kind for in situ SPR studies where creation of low pressure is a prerequisite.

  20. Characterization of Field Exposed Thin Film Modules: Preprint

    SciTech Connect (OSTI)

    Wohlgemuth, J. H.; Sastry, O. S.; Stokes, A.; Singh, Y. K.; Kumar, M.

    2012-06-01T23:59:59.000Z

    Test arrays of thin film modules have been deployed at the Solar Energy Centre near New Delhi, India since 2002-2003. Performances of these arrays were reported by O.S. Sastry [1]. This paper reports on NREL efforts to support SEC by performing detailed characterization of selected modules from the array. Modules were selected to demonstrate both average and worst case power loss over the 8 years of outdoor exposure. The modules characterized included CdTe, CIS and three different types of a-Si. All but one of the a-Si types were glass-glass construction. None of the modules had edge seals. Detailed results of these tests are presented along with our conclusions about the causes of the power loss for each technology.

  1. Absorption of surface acoustic waves by topological insulator thin films

    SciTech Connect (OSTI)

    Li, L. L., E-mail: lllihfcas@foxmail.com [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Xu, W., E-mail: wenxu-issp@aliyun.com [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Department of Physics, Yunnan University, Kunming 650091 (China)

    2014-08-11T23:59:59.000Z

    We present a theoretical study on the absorption of the surface acoustic waves (SAWs) by Dirac electrons in topological insulator (TI) thin films (TITFs). We find that due to momentum and energy conservation laws, the absorption of the SAWs in TITFs can only be achieved via intra-band electronic transitions. The strong absorption can be observed up to sub-terahertz frequencies. With increasing temperature, the absorption intensity increases significantly and the cut-off frequency is blue-shifted. More interestingly, we find that the absorption of the SAWs by the TITFs can be markedly enhanced by the tunable subgap in the Dirac energy spectrum of the TI surface states. Such a subgap is absent in conventional two-dimensional electron gases (2DEGs) and in the gapless Dirac 2DEG such as graphene. This study is pertinent to the exploration of the acoustic properties of TIs and to potential application of TIs as tunable SAW devices working at hypersonic frequencies.

  2. Casimir effect for thin films from imperfect materials

    E-Print Network [OSTI]

    V. N. Markov; Yu. M. Pis'mak

    2006-06-04T23:59:59.000Z

    We propose an approach for investigation of interaction of thin material films with quantum electrodynamic fields. Using main principles of quantum electrodynamics (locality, gauge invariance, renormalizability) we construct a single model for Casimir-like phenomena arising near the film boundary on distances much larger then Compton wavelength of the electron where fluctuations of Dirac fields are not essential. In this model the thin film is presented by a singular background field concentrated on a 2-dimensional surface. All properties of the film material are described by one dimensionless parameter. For two parallel plane films we calculate the photon propagator and the Casimir force, which appears to be dependent on film material and can be both attractive and repulsive. We consider also an interaction of plane film with point charge and straight line current. Here, besides usual results of classical electrodynamics the model predicts appearance of anomalous electric and magnetic fields.

  3. Properties of ferroelectric/ferromagnetic thin film heterostructures

    SciTech Connect (OSTI)

    Chen, Daming, E-mail: chendaming1986@gmail.com [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 Sichuan (China); Harward, Ian; Linderman, Katie; Economou, Evangelos; Celinski, Zbigniew [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); Nie, Yan [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074 (China)

    2014-05-07T23:59:59.000Z

    Ferroelectric/ferromagnetic thin film heterostructures, SrBi{sub 2}Ta{sub 2}O{sub 9}/BaFe{sub 12}O{sub 19} (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

  4. Manipulating Josephson junctions in thin-films by nearby vortices

    SciTech Connect (OSTI)

    Kogan, V.G.; Mints, R.G.

    2014-07-01T23:59:59.000Z

    It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I-c(H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I-c(H) has zero at H = 0 instead of the traditional maximum of '0-type' junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction-vortex separation exceeds similar to W, the strip width, I-c(H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges. (C) 2014 Elsevier B.V. All rights reserved.

  5. Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films

    SciTech Connect (OSTI)

    Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P. [Department of Optoelectronics, University of Kerala, Kariyavattom, Thiruvananthapuram, Kerala 695581 (India); Reddy, V. R.; Ganesan, V. [UGC - DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhyapradesh (India)

    2012-12-01T23:59:59.000Z

    Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

  6. Ultrafast Magnetization Dynamics of SrRuO3 Thin Films

    SciTech Connect (OSTI)

    Langner, Matthew C

    2009-05-19T23:59:59.000Z

    Itinerant ferromagnet SrRuO3 has drawn interest from physicists due to its unusual transport and magnetic properties as well as from engineers due to its low resistivity and good lattice-matching to other oxide materials. The exact electronic structure remains a mystery, as well as details of the interactions between magnetic and electron transport properties. This thesis describes the use of time-resolved magneto-optical Kerr spectroscopy to study the ferromagnetic resonance of SrRuO3 thin films, where the ferromagnetic resonance is initiated by a sudden change in the easy axis direction in response to a pump pulse. The rotation of the easy axis is induced by laser heating, taking advantage of a temperature-dependent easy axis direction in SrRuO3 thin films. By measuring the change in temperature of the magnetic system in response to the laser pulse, we find that the specific heat is dominated by magnons up to unusually high temperature, ~;;100 K, and thermal diffusion is limited by a boundary resistance between the film and the substrate that is not consistent with standard phonon reflection and scattering models. We observe a high FMR frequency, 250 GHz, and large Gilbert damping parameter, alpha ~;; 1, consistent with strong spin-orbit coupling. We observe a time-dependent change in the easy axis direction on a ps time-scale, and we find that parameters associated with the change in easy axis, as well as the damping parameter, have a non-monotonic temperature dependence similar to that observed in anomalous Hall measurements.

  7. Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

    SciTech Connect (OSTI)

    Liang Cai; Gooneratne, Chinthaka; Cha, Dongkyu; Chen Long; Kosel, Jurgen [Computer Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, 4700 KAUST, Thuwal 23955 (Saudi Arabia); Gianchandani, Yogesh [Department of Electrical Engineering and Computer Science, 1301 Beal Ave., University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2012-12-01T23:59:59.000Z

    Metglas{sup TM} 2826MB foils of 25-30 {mu}m thickness with the composition of Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18} have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of {approx}3 {mu}m thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum (Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magnetic properties of FeNi is also observed as the Mo dopant level increases. The coercivity of FeNi films doped with Mo decreases to a value less than one third of the value without dopant. Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropy properties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The film material that is fabricated using an optimized process is magnetically as soft as amorphous Metglas{sup TM} 2826MB with a coercivity of less than 40 Am{sup -1}. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin film materials on their magnetic properties.

  8. Simulation of nanostructure-based and ultra-thin film solar cell devices beyond the classical picture

    E-Print Network [OSTI]

    Aeberhard, Urs

    2014-01-01T23:59:59.000Z

    In this paper, an optoelectronic device simulation framework valid for arbitrary spatial variation of electronic potentials and optical modes, and for transport regimes ranging from ballistic to diffusive, is used to study non-local photon absorption, photocurrent generation and carrier extraction in ultra-thin film and nanostructure-based solar cell devices at the radiative limit. Among the effects that are revealed by the microscopic approach and which are inaccessible to macroscopic models is the impact of structure, doping or bias induced nanoscale potential variations on the local photogeneration rate and the photocarrier transport regime.

  9. Growth direction of oblique angle electron beam deposited silicon monoxide thin films identified by optical second-harmonic generation

    SciTech Connect (OSTI)

    Vejling Andersen, Søren; Lund Trolle, Mads; Pedersen, Kjeld [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg Øst (Denmark)] [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg Øst (Denmark)

    2013-12-02T23:59:59.000Z

    Oblique angle deposited (OAD) silicon monoxide (SiO) thin films forming tilted columnar structures have been characterized by second-harmonic generation. It was found that OAD SiO leads to a rotationally anisotropic second-harmonic response, depending on the optical angle of incidence. A model for the observed dependence of the second-harmonic signal on optical angle of incidence allows extraction of the growth direction of OAD films. The optically determined growth directions show convincing agreement with cross-sectional scanning electron microscopy images. In addition to a powerful characterization tool, these results demonstrate the possibilities for designing nonlinear optical devices through SiO OAD.

  10. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOE Patents [OSTI]

    Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

    2010-07-13T23:59:59.000Z

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  11. High-field magnets using high-critical-temperature superconducting thin films

    DOE Patents [OSTI]

    Mitlitsky, F.; Hoard, R.W.

    1994-05-10T23:59:59.000Z

    High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

  12. Thin-film CdTe and CuInSe{sub 2} photovoltaic technologies

    SciTech Connect (OSTI)

    Ullal, H.S.; Zweibel, K.; von Roedern, B.G.

    1993-08-01T23:59:59.000Z

    Total-area conversion efficiency of 15%--15.8% have been achieved for thin-film CdTe and CIS solar cells. Modules with power output of 5--53 W have been demonstrated by several groups world-wide. Critical processes and reaction pathways for achieving excellent PV devices have been eluciated. Research, development and technical issues have been identified, which could result in potential improvements in device and module performance. A 1-kW thin-film CdTe array has been installed and is being tested. Multimegawatt thin-film CdTe manufacturing plants are expected to be completed in 1-2 years.

  13. High-field magnets using high-critical-temperature superconducting thin films

    DOE Patents [OSTI]

    Mitlitsky, Fred (Livermore, CA); Hoard, Ronald W. (Livermore, CA)

    1994-01-01T23:59:59.000Z

    High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

  14. Notes 08. Turbulence flow in thin film bearings : Characteristics and Modeling

    E-Print Network [OSTI]

    San Andres, Luis

    2009-01-01T23:59:59.000Z

    NOTES 8. TURBULENCE IN THIN FILM FLOWS. Dr. Luis San Andr?s ? 2009 1 Notes 8. Turbulence in Thin Film Flows Notes 8 detail the characteristics of turbulent flows and provide insight into the flow instabilities that precede transition from a... for averaging of turbulent flow velocities [s] NOTES 8. TURBULENCE IN THIN FILM FLOWS. Dr. Luis San Andr?s ? 2009 2 Ta 2 Re C R ?? ?? ?? . Taylor number ?? 1, 2, 3 i i u ? Components of velocity field [m/s] = ? ? ii uu?? ?? 1, 2, 3 , ii i uu...

  15. E-Print Network 3.0 - alloys thin films Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    au no 12, Tome 49, decembre 1988 Summary: film are not enough to use for thin film magnetic recording head 2, 31. On the other hand... that intermedi- ate alloy layer is...

  16. E-Print Network 3.0 - au thin films Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    nanoparticle assembly during dewetting and sublimation of a solid thin film. Metal... and surface tension causes hole spreading and film breakup. For Au on Xe we show that, as for...

  17. Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement

    E-Print Network [OSTI]

    Park, Yong Tae

    2012-07-16T23:59:59.000Z

    Transparent electrodes made from metal oxides suffer from poor flexibility and durability. Highly transparent and electrically conductive thin films based on carbon nanotubes (CNTs) were assembled as a potential indium tin oxide (ITO) replacement...

  18. Polymeric precursor derived nanocrystalline ZnO thin films using EDTA as chelating agent

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    properties, ZnO has plausible electro-optical applications, such as, solar cells [1, 2], light- emitting diodes [3, 4], UV lasers [5], thin film transistors [6,7], and UV photodetectors [8]. Besides

  19. Bi-Sr-Ca-Cu-O thin films grown by flash evaporation and pulsed laser deposition

    E-Print Network [OSTI]

    Ganapathy Subramanian, Santhana

    2004-09-30T23:59:59.000Z

    -phase 2212 films were grown on a MgO substrate using the pulsed laser deposition technique from commercially available 2212 powder. The effect of annealing on the thin films was also studied....

  20. Solid state thin film battery having a high temperature lithium alloy anode

    DOE Patents [OSTI]

    Hobson, David O. (Oak Ridge, TN)

    1998-01-01T23:59:59.000Z

    An improved rechargeable thin-film lithium battery involves the provision of a higher melting temperature lithium anode. Lithium is alloyed with a suitable solute element to elevate the melting point of the anode to withstand moderately elevated temperatures.

  1. Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1 N of epitaxial (001) barium strontium titanate (BST) films are computed as functions of composition, misfit

  2. Impurity and back contact effects on CdTe/CdS thin film solar cells.

    E-Print Network [OSTI]

    Zhao, Hehong

    2008-01-01T23:59:59.000Z

    ??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices… (more)

  3. Development of CdTe thin film solar cells on flexible foil substrates.

    E-Print Network [OSTI]

    Hodges, Deidra Ranel

    2009-01-01T23:59:59.000Z

    ??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption… (more)

  4. CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.

    E-Print Network [OSTI]

    Palekis, Vasilios

    2011-01-01T23:59:59.000Z

    ??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption… (more)

  5. Electron-reflector strategy for CdTe thin-film solar cells.

    E-Print Network [OSTI]

    Hsiao, Kuo-Jui

    2010-01-01T23:59:59.000Z

    ??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially… (more)

  6. Solid-state dewetting of continuous and patterned single crystal Ni thin films

    E-Print Network [OSTI]

    Ye, Jongpil

    2011-01-01T23:59:59.000Z

    Solid-state dewetting of thin films is a process through which continuous solid films agglomerate to form islands. This process is driven by capillary forces, often occurring via surface self-diffusion. Solid-state dewetting ...

  7. Antimicrobial Activity of Cationic Antiseptics in Layer-by-Layer Thin Film Assemblies

    E-Print Network [OSTI]

    Dvoracek, Charlene M.

    2010-07-14T23:59:59.000Z

    Layer-by-layer (LbL) assembly has proven to be a powerful technique for assembling thin films with a variety of properties including electrochromic, molecular sensing, oxygen barrier, and antimicrobial. LbL involves the deposition of alternating...

  8. Micro/nano devices fabricated from Cu-Hf thin films

    DOE Patents [OSTI]

    Luber, Erik J; Ophus, Colin; Mitlin, David; Olsen, Brian; Harrower, Christopher; Radmilovi, Velimir

    2013-06-04T23:59:59.000Z

    An all-metal microdevice or nanodevice such as an atomic force microscope probe is manufactured from a copper-hafnium alloy thin film having an x-ray amorphous microstructure.

  9. Analysis of potential applications for the templated dewetting of metal thin films

    E-Print Network [OSTI]

    Frantzeskakis, Emmanouil

    2005-01-01T23:59:59.000Z

    Thin films have a high surface-to-volume ratio and are therefore usually morphologically unstable. They tend to reduce their surface energy through transport of mass by diffusion. As a result, they decay into a collection ...

  10. Chemical vapor deposition of conjugated polymeric thin films for photonic and electronic applications

    E-Print Network [OSTI]

    Lock, John P

    2005-01-01T23:59:59.000Z

    (cont.) Conjugated polymers have delocalized electrons along the backbone, facilitating electrical conductivity. As thin films, they are integral to organic semiconductor devices emerging in the marketplace, such as flexible ...

  11. Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film

    E-Print Network [OSTI]

    Schmidt, Daniel J.

    This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly ...

  12. Metallic to insulating transition in disordered pulsed laser deposited silicide thin films.

    E-Print Network [OSTI]

    Abou Mourad, Houssam

    2005-01-01T23:59:59.000Z

    ??A metal-to-insulating transition has been observed in iron, iron oxide, iron silicide and cobalt silicide thin films when deposited on Si substrate with a native… (more)

  13. Lateral heterojunction photodetector consisting of molecular organic and colloidal quantum dot thin films

    E-Print Network [OSTI]

    exception being the dye- sensitized solar cell.3 Owing to its unique geometry, the present device also and that is sensitized across visible wavelengths by a thin film of colloidal CdSe nanocrystal quantum dots QDs . High

  14. Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials

    DOE Patents [OSTI]

    Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

    2014-02-04T23:59:59.000Z

    Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

  15. Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells

    E-Print Network [OSTI]

    Mailoa, Jonathan P

    2012-01-01T23:59:59.000Z

    Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

  16. Chemical vapor deposition thin films as biopassivation coatings and directly patternable dielectrics

    E-Print Network [OSTI]

    Pryce Lewis, Hilton G. (Hilton Gavin), 1973-

    2001-01-01T23:59:59.000Z

    Organosilicon thin films deposited by pulsed plasma-enhanced chemical vapor deposition (PPECVD) and hot-filament chemical vapor deposition (HFCVD) were investigated as potential biopassivation coatings for neural probes. ...

  17. Efficient Föster energy transfer : from phosphorescent organic molecules to J-aggregate thin film

    E-Print Network [OSTI]

    Shirasaki, Yasuhiro

    2008-01-01T23:59:59.000Z

    This thesis demonstrates the first ever use of Forster resonance energy transfer (FRET) to increase the quantum efficiency of a electrically pumped J-aggregate light emitting device (JLED). J-aggregate thin films are highly ...

  18. Integration of pentacene-based thin film transistors via photolithography for low and high voltage applications

    E-Print Network [OSTI]

    Smith, Melissa Alyson

    2012-01-01T23:59:59.000Z

    An organic thin film transistor (OTFT) technology platform has been developed for flexible integrated circuits applications. OTFT performance is tuned by engineering the dielectric constant of the gate insulator and the ...

  19. Apparatus for making cathodo- and photo- luminescent measurements of thin film phosphors

    E-Print Network [OSTI]

    Babuchna, Paul Michael

    1998-01-01T23:59:59.000Z

    the understanding of the thin film phosphor, tungsten doped zinc oxide. Principally, a vacuum system is constructed and provides for both photo-and cathode-phosphor excitations. A measurement capability is then included. Finally, additions are mentioned...

  20. Femtosecond pump-probe studies of reduced graphene oxide thin films

    E-Print Network [OSTI]

    Ruzicka, Brian Andrew; Werake, Lalani Kumari; Zhao, Hui; Wang, Shuai; Loh, Kian Ping

    2010-04-01T23:59:59.000Z

    The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each sample...