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1

Metalorganic chemical vapor deposition of carbon-free ZnO using...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor. Metalorganic chemical vapor deposition of carbon-free...

2

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular  

E-Print Network [OSTI]

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections Tevye widths of 15-200 nm. Transmission electron microscopy confirmed that the wires were single as a carrier gas, was percolated through the TMG precursor and coupled with a second nitrogen line to give

Yang, Peidong

3

Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs  

Science Journals Connector (OSTI)

Disilane (Si2H6) is presented as a new silicon doping source in the metalorganic chemical vapor deposition of GaAs together with comparison results obtained using the conventional silane (SiH4) doping source. The dopingcharacteristics of disilane were studied over a wide range of growth conditions: temperature gas phase stoichiometry and disilane concentration in the growth ambient. Silicon incorporation by means of disilane pyrolysis showed no temperature dependence in sharp contrast to the strong temperature activated dependence found when employing silane. The decomposition reaction of disilane proved to be very efficient reducing the amount of dopant gas required by about two orders of magnitude at the lower growth temperatures. Electrical measurements on disilane?doped GaAs yield the same high mobilities as obtained in silane?doped GaAs films indicative of low compensation.

T. F. Kuech; B. S. Meyerson; E. Veuhoff

1984-01-01T23:59:59.000Z

4

Pressure dependence of phonons and excitons in InSe films prepared by metal-organic chemical vapor deposition  

Science Journals Connector (OSTI)

The pressure dependence of the Raman spectra of phase-pure InSe thin films prepared by the low-pressure metal-organic chemical vapor deposition technique has been studied using a diamond-anvil high-pressure cell. Enhancement in the intensities of the Raman modes has been observed as a result of pressure-induced “tuning” of the energy of the M1-type hyperbolic exciton in InSe at ?2.54 eV through discrete incident laser photon energies. The pressure coefficients of the phonon modes and of the hyperbolic exciton in InSe have been determined.

In-Hwan Choi and Peter Y. Yu

2003-10-27T23:59:59.000Z

5

Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) images show that the CdTe domains are 30 degrees orientated from each other.

GIARE, C [Rensselaer Polytechnic Institute (RPI); RAO, S [Rensselaer Polytechnic Institute (RPI); RILEY, M [Rensselaer Polytechnic Institute (RPI); CHEN, L [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; BHAT, I [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI); WANG, G [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

6

The growth of CdTe/GaAs heteroepitaxial films by metal–organic chemical vapor deposition  

Science Journals Connector (OSTI)

A process for the growth of CdTe/GaAs heteroepitaxialfilms using metal–organic chemical vapor deposition(MOCVD) has been developed. The initial results of the determination of the deposition mechanism are reported. A pilot production demonstration using experimentally determined operating conditions has been completed. This is the first reported pilot production of CdTe/GaAs using 2 in. diam GaAs substrates in a multiple slice commercially manufactured MOCVD system. The results reported therein demonstrate that MOCVD is a reliable reproducible production worthy process for preparation of CdTe/GaAs heterostructures. These results are applicable to a wide variety of CdTe based device technologies including IR detection fiber optics solar cells and others.

Philip L. Anderson

1986-01-01T23:59:59.000Z

7

Thermal treatment induced change of diluted oxygen doped ZnTe films grown by metal-organic chemical vapor deposition  

Science Journals Connector (OSTI)

In this paper the authors report the growth of diluted oxygen doped ZnTe films (ZnTe:O) by metal-organic chemical vapor deposition (MOCVD). The effect of a post thermal annealing on the properties of the highly mismatched films has been investigated. It is found that the in-situ doping leads to an effective incorporation of oxygen into ZnTe films with different occupation configurations either on Zn or on Te site. The subsequent annealing process in a vacuum ambient leads to an enhancement of the oxygen incorporation into the ZnTe:O films due to the diffusion of the residual oxygen while the annealing with the same as-grown sample covered on top of the surface (denoted as “face-to-face” annealing in the text) is beneficial to the improvement of the film quality with manifest intermediate band emission at around 1.9?eV as revealed by the low-temperature photoluminescence. This study indicates that the mass-productive MOCVD technique may be suitable for the growth of highly mismatched ZnTe:O films for the application of the intermediate band solar cell.

2014-01-01T23:59:59.000Z

8

The optimization of interfaces in InAsSb/InGaAs strained-layer superlattices grown by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

We have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) under a variety of conditions. Presence of an InGaAsSb interface layer is indicated by x-ray diffraction patterns. Optimized growth conditions involved the use of low pressure, short purge times, and no reactant flow during the purges. MOCVD was used to prepare an optically pumped, single heterostructure InAsSb/InGaAs SLS/InPSb laser which emitted at 3.9 {mu}m with a maximum operating temperature of approximately 100 K.

Biefeld, R.M.; Baucom, K.C.; Kurtz, S.R.

1993-12-31T23:59:59.000Z

9

Growth of magnesium oxide thin lms using single molecular precursors by metalorganic chemical vapor deposition  

E-Print Network [OSTI]

Growth of magnesium oxide thin ®lms using single molecular precursors by metal±organic chemical precursors; Silicon; Sapphire 1. Introduction Magnesium oxide (MgO) thin ®lms have attracted much attention MgO ®lms on Si(100) above 6508C by thermal CVD. Murayama and Shionoya [12] used magnesium 2

Boo, Jin-Hyo

10

Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters  

SciTech Connect (OSTI)

We have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) by metal-organic chemical vapor deposition using a variety of growth conditions. Presence of an InGaAsSb interface layer was indicated by x-ray diffraction. This interface effect was minimized by optimizing the purge times, reactant flows, and growth conditions. The optimized growth conditions involved the use of low pressure, short purge times between the growth of the layers, and no reactant flow during the purges. Electron diffraction indicates that CuPt-type compositional ordering occurs in InAs{sub 1{minus}x}Sb{sub x} alloys and SLSs which explains an observed bandgap reduction from previously accepted alloy values.

Biefeld, R.M.; Baucom, K.C.; Follstaedt, D.M.; Kurtz, S.R.

1994-08-01T23:59:59.000Z

11

Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical  

E-Print Network [OSTI]

rf plasma-assisted metalorganic chemical vapor deposition G. C. Chen, D.-C. Lim, S.-B. Lee, and J-derived plasma-assisted metalorganic chemical vapor deposition MOCVD , and have studied the electrical compounds have become promising functional materials for integrated circuits, flash memories, and solar

Boo, Jin-Hyo

12

Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.  

SciTech Connect (OSTI)

The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was granted on this program, an additional more 'liquid-like' Sc precursor was evaluated and the nitridation of Sc metals on GaN were investigated. Using the Sc precursor, dopant level quantities of Sc were incorporated into GaN, thereby concluding the growth of ScGaN and YGaN films. Our remaining time during the no-cost extension was focused on pulsed laser deposition of Sc metal films on GaN, followed by nitridation in the MOCVD reactor to form ScN. Finally, GaN films were deposited on the ScN thin films in order to study possible GaN dislocation reduction.

Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

2009-07-01T23:59:59.000Z

13

Substrate effect on CdTe layers grown by metalorganic vapor phase N. V. Sochinskiia),b)  

E-Print Network [OSTI]

Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy N. V. Sochinskiia for publication 30 December 1996 CdTe layers were grown by metalorganic vapor phase epitaxy MOVPE on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C

Viña, Luis

14

Chemical vapor deposition sciences  

SciTech Connect (OSTI)

Chemical vapor deposition (CVD) is a widely used method for depositing thin films of a variety of materials. Applications of CVD range from the fabrication of microelectronic devices to the deposition of protective coatings. New CVD processes are increasingly complex, with stringent requirements that make it more difficult to commercialize them in a timely fashion. However, a clear understanding of the fundamental science underlying a CVD process, as expressed through computer models, can substantially shorten the time required for reactor and process development. Research scientists at Sandia use a wide range of experimental and theoretical techniques for investigating the science of CVD. Experimental tools include optical probes for gas-phase and surface processes, a range of surface analytic techniques, molecular beam methods for gas/surface kinetics, flow visualization techniques and state-of-the-art crystal growth reactors. The theoretical strategy uses a structured approach to describe the coupled gas-phase and gas-surface chemistry, fluid dynamics, heat and mass transfer of a CVD process. The software used to describe chemical reaction mechanisms is easily adapted to codes that model a variety of reactor geometries. Carefully chosen experiments provide critical information on the chemical species, gas temperatures and flows that are necessary for model development and validation. This brochure provides basic information on Sandia`s capabilities in the physical and chemical sciences of CVD and related materials processing technologies. It contains a brief description of the major scientific and technical capabilities of the CVD staff and facilities, and a brief discussion of the approach that the staff uses to advance the scientific understanding of CVD processes.

NONE

1992-12-31T23:59:59.000Z

15

The influence of prestrained metalorganic vapor phase epitaxial gallium-nitride templates on hydride vapor phase epitaxial growth  

Science Journals Connector (OSTI)

We have varied the strain situation in metalorganic vapor phase epitaxial (MOVPE) grown gallium-nitride (GaN) by exchanging the nucleation layer and by inserting a submono-Si x N y -interlayer in the first few hundred nanometers of growth on sapphire substrates. The influence on the MOVPE template and subsequent hydride vapor phase epitaxial (HVPE) growth could be shown by in-situ measurements of the sample curvature. Using the results of these investigations we have established a procedure to confine the curvature development in MOVPE and HVPE growth to a minimum. By increasing the layer thickness in HVPE we could create self-separated freestanding GaN layers with small remaining curvature.

2014-01-01T23:59:59.000Z

16

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy  

E-Print Network [OSTI]

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor have observed photoluminescence of Al1 xInxN films. The films were grown on GaN by atmospheric pressure-temperature deposited AlN buffer layer. Photoluminescence, absorption, and x-ray diffraction measurements have shown

Wetzel, Christian M.

17

Growth of vertical-cavity surface emitting lasers by metalorganic vapor phase epitaxy  

SciTech Connect (OSTI)

We present growth and characterization of visible and near-infrared vertical-cavity surface emitting lasers (VCSELs) grown by metalorganic vapor phase epitaxy. Discussions on the growth issue of VCSEL materials include growth rate and composition control using an {ital in}{ital situ} normal-incidence reflectometer, comprehensive p- and n-type doping study in AlGaAs by CCl{sub 4} and Si{sub 2}H{sub 6} over the entire composition range, and optimization of ultra-high material uniformity. We also demonstrate our recent achievements of all-AlGaAs VCSELs which include the first room-temperature continuous- wave demonstration of 700-nm red VCSELs and high-efficiency and low- threshold voltage 850-nm VCSELs.

Hou, H.Q.; Hammons, B.E.; Crawford, M.H.; Lear, K.L.; Choquette, K.D.

1996-10-01T23:59:59.000Z

18

Chemical vapor deposition of functionalized isobenzofuran polymers  

E-Print Network [OSTI]

This thesis develops a platform for deposition of polymer thin films that can be further tailored by chemical surface modification. First, we explore chemical vapor deposition of functionalized isobenzofuran films using ...

Olsson, Ylva Kristina

2007-01-01T23:59:59.000Z

19

Aerogel composites using chemical vapor infiltration  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Aerogel composites using chemical vapor infiltration Aerogel composites using chemical vapor infiltration Title Aerogel composites using chemical vapor infiltration Publication Type Journal Article Year of Publication 1995 Authors Hunt, Arlon J., Michael R. Ayers, and Wanqing Cao Journal Journal of Non-Crystalline Solids Volume 185 Pagination 227-232 Abstract A new method to produce novel composite materials based on the use of aerogels as a starting material is described. Using chemical vapor infiltration, a variety of solid materials were thermally deposited into the open pore structure of aerogel. The resulting materials possess new and unusual properties including photoluminescence, magnetism and altered optical properties. An important characteristic of this preparation process is the very small size of the deposits that gives rise to new behaviors. Silicon deposits exhibit photoluminescence, indicating quantum confinement. Two or more phases may be deposited simultaneously and one or both chemically or thermally reacted to produce new structures.

20

Hydrogen-Bond Acidic Polymers for Chemical Vapor Sensing. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Acidic Polymers for Chemical Vapor Sensing. Hydrogen-Bond Acidic Polymers for Chemical Vapor Sensing. Abstract: A review with 171 references. Hydrogen-bond acidic polymers for...

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Chemical vapor detection using nanomechanical platform  

Science Journals Connector (OSTI)

For high sensitive and multiplexed chemical analysis, an opto-mechanical detection platform has been built. To check the performance of the platform, we performed water vapor response measurements for ... sensors...

S. H. Lim

2007-11-01T23:59:59.000Z

22

Corrosion resistance of artificial passivation films of Fe[sub 2]O[sub 3]-Cr[sub 2]O[sub 3]-NiO formed by metalorganic chemical vapor deposition  

SciTech Connect (OSTI)

A series of thin Fe[sub 2]O[sub 3]-Cr[sub 2]O[sub 3]-NiO films were formed on Pt by an MOCVD technique using Fe(III), Cr(III), and Ni(II) acetylacetonate. The corrosion resistance of the films was examined in H[sub 2]SO[sub 4] and HCl by measuring the film thickness using ellipsometry and the chemical analysis of test solutions with ICPS. The dissolution rate of Fe[sub 2]O[sub 3]-Cr[sub 2]O[sub 3] composite films decreases exponentially with an increase in the cationic mass fraction of Cr[sup 3+] ions, X[sub Cr], of the films, and at the values of X[sub Cr] larger than 0.7 it becomes two orders of magnitude lower than that of Fe[sub 2]O[sub 3] films. The same type of changes in the dissolution rate with X[sub Cr] was observed for the NiO-Cr[sub 2]O[sub 3] composite films. Therefore, the addition of Cr[sub 2]O[sub 3] to Fe[sub 2]O[sub 3] and NiO films effectively improves the corrosion resistance. The addition of NiO to Fe[sub 2]O[sub 3]-Cr[sub 2]O[sub 3] composite films containing an adequate amount of Cr[sub 2]O[sub 3] does not bring an effective improvement in corrosion resistance. Therefore, the corrosion resistance of Fe[sub 2]O[sub 3]-Cr[sub 2]O[sub 3]-NiO composite films is determined primarily by the Cr[sub 2]O[sub 3] content of the films.

Sugimoto, Katsuhisa; Seto, Masahiro; Tanaka, Shigeaki; Hara, Nobuyoshi (Tohoku Univ., Sendai (Japan). Dept. of Metallurgy)

1993-06-01T23:59:59.000Z

23

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy  

SciTech Connect (OSTI)

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In{sub x}Ga{sub 1-x}As (x{approx}0.20) inserts with thicknesses from 36 to 220 nm with {+-}10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L. [Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2010-12-13T23:59:59.000Z

24

Stress-induced chemical detection using flexible metal-organic frameworks.  

SciTech Connect (OSTI)

In this work we demonstrate the concept of stress-induced chemical detection using metal-organic frameworks (MOFs) by integrating a thin film of the MOF HKUST-1 with a microcantilever surface. The results show that the energy of molecular adsorption, which causes slight distortions in the MOF crystal structure, can be efficiently converted to mechanical energy to create a highly responsive, reversible, and selective sensor. This sensor responds to water, methanol, and ethanol vapors, but yields no response to either N{sub 2} or O{sub 2}. The magnitude of the signal, which is measured by a built-in piezoresistor, is correlated with the concentration and can be fitted to a Langmuir isotherm. Furthermore, we show that the hydration state of the MOF layer can be used to impart selectivity to CO{sub 2}. We also report the first use of surface-enhanced Raman spectroscopy to characterize the structure of a MOF film. We conclude that the synthetic versatility of these nanoporous materials holds great promise for creating recognition chemistries to enable selective detection of a wide range of analytes. A force field model is described that successfully predicts changes in MOF properties and the uptake of gases. This model is used to predict adsorption isotherms for a number of representative compounds, including explosives, nerve agents, volatile organic compounds, and polyaromatic hydrocarbons. The results show that, as a result of relatively large heats of adsorption (> 20 kcal mol{sup -1}) in most cases, we expect an onset of adsorption by MOF as low as 10{sup -6} kPa, suggesting the potential to detect compounds such as RDX at levels as low as 10 ppb at atmospheric pressure.

Allendorf, Mark D.; Hesketh, Peter J. (Georgia Institute of Technology, Atlanta, GA); Gall, Kenneth A. (Georgia Institute of Technology, Atlanta, GA); Choudhury, A. (Georgia Institute of Technology, Atlanta, GA); Pikarsky, J. (Georgia Institute of Technology, Atlanta, GA); Andruszkiewicz, Leanne (Georgia Institute of Technology, Atlanta, GA); Houk, Ronald J. T.; Talin, Albert Alec (National Institute of Standards & Technology, Gaithersburg, MD)

2009-09-01T23:59:59.000Z

25

Investigations of chemical vapor deposition of GaN using synchrotron radiation  

SciTech Connect (OSTI)

The authors apply synchrotron x-ray analysis techniques to probe the surface structure of GaN films during synthesis by metal-organic chemical vapor deposition (MOCVD). Their approach is to observe the evolution of surface structure and morphology in real time using grazing incidence x-ray scattering (GIXS). This technique combines the ability of x-rays to penetrate the chemical vapor deposition environment for in situ measurements, with the sensitivity of GIXS to atomic scale structure. In this paper they present examples from some of their studies of growth modes and surface evolution as a function of process conditions that illustrate the capabilities of synchrotron x-ray analysis during MOCVD growth. They focus on studies of the homoepitaxial growth mode, island coarsening dynamics, and effects of impurities.

Thompson, C.; Stephenson, G. B.; Eastman, J. A.; Munkholm, A.; Auciello, O.; Murty, M. V. R.; Fini, P.; DenBaars, S. P.; Speck, J. S.

2000-05-25T23:59:59.000Z

26

Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition  

Science Journals Connector (OSTI)

Vertically aligned ZnO films were deposited on n-InP by metalorganic chemical vapour deposition. X-ray diffraction, field emission scanning electron microscopy and photoluminescence measurements demonstrated that the ZnO films had good quality. By evaporating AuZn electrodes on both ZnO and InP surfaces, a ZnO-based light emitting device was fabricated. Under forward voltage, weak green emissions can be observed in darkness.

Huichao Zhu; Baolin Zhang; Xiangping Li; Xin Dong; Wancheng Li; Hesong Guan; Yongguo Cui; Xiaochuan Xia; Tianpeng Yang; Yuchun Chang; Guotong Du

2007-01-01T23:59:59.000Z

27

Chemical vapor deposition of epitaxial silicon  

DOE Patents [OSTI]

A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

Berkman, Samuel (Florham Park, NJ)

1984-01-01T23:59:59.000Z

28

Chemical vapor deposition of group IIIB metals  

DOE Patents [OSTI]

Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

Erbil, A.

1989-11-21T23:59:59.000Z

29

Laser techniques for studying chemical vapor deposition  

SciTech Connect (OSTI)

Chemical vapor deposition (CVD) is widely used to produce thin films for microelectronics, protective coatings and other materials processing applications. Despite the large number of applications, however, little is known about the fundamental chemistry and physics of most CVD processes. CVD recipes have generally been determined empirically, but as process requirements become more stringent, a more basic understanding will be needed to improve reactor design and speed process optimization. In situ measurements of the reacting gas are important steps toward gaining such an understanding, both from the standpoint of characterizing the reactor and testing models of a CVD process. Our work, a coordinated program of experimental and theoretical research in the fundamental mechanisms of CVD, illustrates the application of laser techniques to the understanding of a CVD system. We have used a number of laser-based techniques to probe CVD systems and have compared our measurements with predictions from computer models, primarily for the silane CVD system. The silane CVD model solves the two-dimensional, steady-state boundary layer equations of fluid flow coupled to 26 elementary chemical reactions describing the thermal decomposition of silane and the subsequent reactions of intermediate species that result in the deposition of a silicon film.

Ho, P.; Breiland, W.G.; Coltrin, M.E.

1990-01-01T23:59:59.000Z

30

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

31

All graphene electromechanical switch fabricated by chemical vapor deposition  

E-Print Network [OSTI]

We demonstrate an electromechanical switch comprising two polycrystalline graphene films; each deposited using ambient pressure chemical vapor deposition. The top film is pulled into electrical contact with the bottom film ...

Milaninia, Kaveh M.

32

The chemical vapor deposition of zirconium carbide onto ceramic substrates  

SciTech Connect (OSTI)

Zirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system.

Glass, John A, Jr.; Palmisiano, Nick, Jr.; Welsh, R. Edward

1999-07-01T23:59:59.000Z

33

X-ray determination of threading dislocation densities in GaN/Al{sub 2}O{sub 3}(0001) films grown by metalorganic vapor phase epitaxy  

SciTech Connect (OSTI)

Densities of a- and a+c-type threading dislocations for a series of GaN films grown in different modes by metalorganic vapor phase epitaxy are determined from the x-ray diffraction profiles in skew geometry. The reciprocal space maps are also studied. Theory of x-ray scattering from crystals with dislocations is extended in order to take into account contribution from both threading and misfit dislocations. The broadening of the reciprocal space maps along the surface normal and the rotation of the intensity distribution ellipse is attributed to misfit dislocations at the interface. We find that the presence of a sharp AlN/GaN interface leads to an ordering of misfit dislocations and reduces strain inhomogeneity in GaN films.

Kopp, Viktor S., E-mail: victor.kopp@pdi-berlin.de; Kaganer, Vladimir M. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany); Baidakova, Marina V.; Lundin, Wsevolod V.; Nikolaev, Andrey E.; Verkhovtceva, Elena V.; Yagovkina, Maria A. [Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St.-Petersburg (Russian Federation); Cherkashin, Nikolay [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse (France)

2014-02-21T23:59:59.000Z

34

Chemical vapor deposition of amorphous semiconductor films. Final subcontract report  

SciTech Connect (OSTI)

Chemical vapor deposition (CVD) from higher order silanes has been studied for fabricating amorphous hydrogenated silicon thin-film solar cells. Intrinsic and doped a-Si:H films were deposited in a reduced-pressure, tubular-flow reactor, using disilane feed-gas. Conditions for depositing intrinsic films at growth rates up to 10 A/s were identified. Electrical and optical properties, including dark conductivity, photoconductivity, activation energy, optical absorption, band-gap and sub-band-gap absorption properties of CVD intrinsic material were characterized. Parameter space for depositing intrinsic and doped films, suitable for device analysis, was identified.

Rocheleau, R.E.

1984-12-01T23:59:59.000Z

35

Combustion chemical vapor deposited coatings for thermal barrier coating systems  

SciTech Connect (OSTI)

The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings. In this report, the evaluation of alumina and ceria coatings on a nickel-chromium alloy is described.

Hampikian, J.M.; Carter, W.B. [Georgia Institute of Technology, Atlanta, GA (United States). School of Materials Science and Engineering

1995-12-31T23:59:59.000Z

36

Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition  

SciTech Connect (OSTI)

We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

Nam, Youngwoo, E-mail: youngwoo.nam@chalmers.se [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Sun, Jie; Lindvall, Niclas; Yurgens, August [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Jae Yang, Seung; Rae Park, Chong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of); Woo Park, Yung [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

2014-01-13T23:59:59.000Z

37

Chemical vapor deposition of hydrogenated amorphous silicon from disilane  

SciTech Connect (OSTI)

The authors describe hydrogenated amorphous silicon (a-Si:H) thin films deposited at growth rates of 1 to 30 A/s by chemical vapor deposition (CVD) from disilane source gas at 24 torr total pressure in a tubular reactor. The effects of substrate temperature and gas holding time (flow rate) on film growth rate and effluent gas composition were measured at temperatures ranging from 360{sup 0} to 485{sup 0}C and gas holding times from 3 to 62s. Effluent gases determined by gas chromatography included silane, disilane and other higher order silanes. A chemical reaction engineering model, based on a silylene (SiH/sub 2/) insertion gas phase reaction network and film growth from both SiH/sub 2/ and high molecular weight silicon species, Si/sub n/H/sub 2n/, was developed. The model predictions were in good agreement with experimentally determined growth rates and effluent gas compositions.

Bogaert, R.J.; Russell, T.W.F.; Klein, M.T. (Delaware Univ., Newark, DE (USA). Dept. of Chemical Engineering); Rocheleau, R.E.; Baron, B.N. (Delaware Univ., Newark, DE (USA). Inst. of Energy Conversion)

1989-10-01T23:59:59.000Z

38

Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition  

DOE Patents [OSTI]

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

Han, Jung (Woodbridge, CT); Su, Jie (New Haven, CT)

2008-08-05T23:59:59.000Z

39

Synthesis and Characterization of Magnetic Nanowires Prepared by Chemical Vapor Deposition.  

E-Print Network [OSTI]

??Various metal silicide and germanide magnetic nanowires were synthesized using a home-built CVD [chemical vapor deposition] system. The morphology, composition, and magnetic properties of the… (more)

Tang, Siwei

2014-01-01T23:59:59.000Z

40

Chemical vapor deposition of boron-doped hydrogenated amorphous silicon  

SciTech Connect (OSTI)

Deposition conditions and film properties for a variety of boron-doped hydrogenated amorphous silicon films and silicon-carbon films produced by chemical vapor deposition (CVD) are discussed. Deposition gases include monosilane, disilane, trisilane, and acetylene. Two types of optically wide band-gap p layers are obtained. One of these window p layers (without carbon) has been extensively tested in photovoltaic devices. Remarkably, this p layer can be deposited between about 200 to 300 /sup 0/C. A typical open circuit voltage in an all CVD p-i-n device is 0.70--0.72 V, and in a hybrid device where the i and n layers are deposited by glow discharge, 0.8--0.83 V.

Ellis F.B. Jr.; Delahoy, A.E.

1985-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Strain relaxation in graphene grown by chemical vapor deposition  

SciTech Connect (OSTI)

The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27?cm{sup ?1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

Troppenz, Gerald V., E-mail: gerald.troppenz@helmholtz-berlin.de; Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin (Germany)

2013-12-07T23:59:59.000Z

42

Field emission properties of chemical vapor deposited individual graphene  

SciTech Connect (OSTI)

Here, we report field emission (FE) properties of a chemical vapor deposited individual graphene investigated by in-situ transmission electron microscopy. Free-standing bilayer graphene is mounted on a cathode microprobe and FE processes are investigated varying the vacuum gap of cathode and anode. The threshold field for 10?nA current were found to be 515, 610, and 870?V/?m for vacuum gap of 400, 300, and 200?nm, respectively. It is observed that the structural stability of a high quality bilayer graphene is considerably stable during emission process. By contacting the nanoprobe with graphene and applying a bias voltage, structural deformation and buckling are observed with significant rise in temperature owing to Joule heating effect. The finding can be significant for practical application of graphene related materials in emitter based devices as well as understanding the contact resistance influence and heating effect.

Zamri Yusop, Mohd [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Department of Materials, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan)

2014-03-03T23:59:59.000Z

43

Iron (III) Chloride doping of large-area chemical vapor deposition graphene  

E-Print Network [OSTI]

Chemical doping is an effective method of reducing the sheet resistance of graphene. This thesis aims to develop an effective method of doping large area Chemical Vapor Deposition (CVD) graphene using Iron (III) Chloride ...

Song, Yi, S.M. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

44

CO-CATALYTIC ABSORPTION LAYERS FOR CONTROLLED LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF CARBON NANOTUBES  

E-Print Network [OSTI]

The concept of co-catalytic layer structures for controlled laser-induced chemical vapor deposition of carbon nanotubes is established, in which a thin Ta support layer chemically aids the initial Fe catalyst reduction. This enables a significant...

Michaelis, F.B.; Weatherup, R.S.; Bayer, B.C.; Bock, M.C.D; Sugime, H.; Caneva, S.; Robertson, J.; Baumberg, J.J.; Hofmann, S.

2014-02-24T23:59:59.000Z

45

Tunneling characteristics in chemical vapor deposited graphene hexagonal boron nitride graphene junctions  

E-Print Network [OSTI]

1 Tunneling characteristics in chemical vapor deposited graphene ­ hexagonal boron nitride ­ graphene junctions T. Roy1 , L. Liu2 , S. de la Barrera,3 B. Chakrabarti1,4 , Z. R. Hesabi1 , C. A. Joiner1 Abstract: Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate

Feenstra, Randall

46

Computational Analysis and Optimization of a Chemical Vapor Deposition Reactor with  

E-Print Network [OSTI]

Computational Analysis and Optimization of a Chemical Vapor Deposition Reactor with Large and optimization of a three- dimensional model of a horizontal chemical vapor deposition (CVD) reactor used National Laboratories February 9, 2004 Abstract A computational analysis and optimization is presented

47

Optimization of the chemical vapor deposition process for carbon nanotubes fabrication  

E-Print Network [OSTI]

Optimization of the chemical vapor deposition process for carbon nanotubes fabrication M. Grujicica-phase chemistry and surface chemistry model is developed to analyze, at the reactor length scale, chemical vapor (carrier gas) in the presence of cobalt catalytic particles in a cylindrical reactor. The model allows

Grujicic, Mica

48

On the optimization of a dc arcjet diamond chemical vapor deposition reactor  

E-Print Network [OSTI]

On the optimization of a dc arcjet diamond chemical vapor deposition reactor S. W. Reevea) and W. A precursor in our dc arcjet reactor.1 Based on conclusions drawn from that work, an optimization strategy diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing

Dandy, David

49

Chemical vapor deposition of amorphous silicon films from disilane  

SciTech Connect (OSTI)

Amorphous silicon films for fabrication of solar cells have been deposited by thermal chemical vapor deposition (CVD) from disilane (Si/sub 2/H/sub 6/) using a tubular flow reactor. A mathematical description for the CVD reactor was developed and solved by a numerical procedure. The proposed chemical reaction network for the model is based on silylene (SiH/sub 2/) insertion in the gas phase and film growth from SiH/sub 2/ and silicon polymers (Si/sub n/N/sub 2n/, n approx. 10). Estimates of the rate constants have been obtained for trisilane decomposition, silicon polymer formation, and polymer dehydrogenation. The silane unimolecular decomposition rate constants were corrected for pressure effects. The model behavior is compared to the experimental results over the range of conditions: reactor temperature (360 to 485/sup 0/C), pressures (2 to 48 torr), and gas holding time (1 to 70 s). Within the above range of conditions, film growth rate varies from 0.01 to 30 A/s. Results indicate that silicon polymers are the main film precursors for gas holding times greater than 3 s. Film growth by silylene only becomes important at short holding times, large inert gas dilution, and positions near the beginning of the reactor hot zone.

Bogaert, R.J.

1986-01-01T23:59:59.000Z

50

Growth of graphene underlayers by chemical vapor deposition  

SciTech Connect (OSTI)

We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa)] [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)] [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

2013-11-15T23:59:59.000Z

51

Charged impurity-induced scatterings in chemical vapor deposited graphene  

SciTech Connect (OSTI)

We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.

Li, Ming-Yang; Tang, Chiu-Chun [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ling, D. C. [Department of Physics, Tamkang University, Tamsui Dist., New Taipei 25137, Taiwan (China); Li, L. J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 11529, Taiwan (China); Chi, C. C.; Chen, Jeng-Chung [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2013-12-21T23:59:59.000Z

52

Nickel catalyst faceting in plasma-enhanced direct current chemical vapor deposition of carbon nanofibers  

E-Print Network [OSTI]

1 Nickel catalyst faceting in plasma-enhanced direct current chemical vapor deposition of carbon vapor deposition with Ni catalysts on the top of nanofibers. Transmission electron microscopy was used to study the morphology and crystallography of Ni catalysts, which are essential for the nucleation

Paris-Sud XI, Université de

53

Chem. Mater. 1995, 7, 2269-2272 2269 Water Vapor Adsorption on Chemically Treated  

E-Print Network [OSTI]

Chem. Mater. 1995, 7, 2269-2272 2269 Water Vapor Adsorption on Chemically Treated Activated Carbon August 25, 1995@ Water vapor adsorption on activated carbon cloth (ACCBO)which has been oxidized% Cl), and ACCBO (4% N), exhibits sigmoidal isotherms with hysteresis loops of varying magnitudes

Cal, Mark P.

54

OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR  

E-Print Network [OSTI]

OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR K.J. BACHMANN of computer simulations as an optimal design tool which lessens the costs in time and effort in experimental vapor deposition (HPOMCVD) reactor for use in thin film crystal growth. The advantages of such a reactor

55

Properties of hydrogenated amorphous silicon prepared by chemical vapor deposition  

SciTech Connect (OSTI)

Hydrogenated amorphous silicon (a-Si:H) films were prepared by chemical vapor deposition (CVD) from mixtures of silane, disilane, trisilane, and higher polysilanes in hydrogen carrier gas at 1 atm total pressure, at substrate temperatures from 420--530 /sup 0/C. Experimental parameters are explained and properties as a function of these parameters are shown. The measurements include hydrogen content (by IR), optical, electrical, and photovoltaic properties of the material. In most respects, the CVD material closely resembles the a-Si:H usually prepared by glow discharge. The following differences have been noted: (1) the CVD a-Si:H shows no IR absorption at 840--850 cm/sup -1/, which is consistent with the expected better thermal stability of the CVD material because of the much higher substrate temperatures in the CVD process than in the glow discharge process. (2) The band gap of CVD a-Si:H is lower by about 0.1 eV than glow discharge a-Si:H of the same hydrogen content. Thus, the band gap of CVD a-Si:H is better matched to the solar spectrum than is glow discharge a-Si:H. (3) All three IR absorption bands due to hydrogen are about 20% narrower in the CVD a-Si:H, suggesting a simpler structure. (4) The temperature dependence of the dark conductivity of CVD a-Si:H fits a curve for a single activation energy, in contrast to the more complicated temperature dependence often found in glow discharge a-Si:H, in which two different activation energies are seen at high and low temperatures. This suggests that the conduction mechanism is also simpler in the CVD a-Si:H.

Ellis, F.B. Jr.; Gordon, R.G.; Paul, W.; Yacobi, B.G.

1984-06-15T23:59:59.000Z

56

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

57

Oxidative chemical vapor deposition of conductive polymers for use in novel photovoltaic device architectures  

E-Print Network [OSTI]

The conductive polymer poly(3,4-ethylenedioxythiophene), (PEDOT), deposited via oxidative chemical vapor deposition (oCVD) has been investigated for use in organic electronic devices. The oCVD process as well as the ...

Howden, Rachel M. (Rachel Mary)

2013-01-01T23:59:59.000Z

58

Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel  

E-Print Network [OSTI]

An ambient pressure chemical vapor deposition (APCVD) process is used to fabricate graphene based films consisting of one to several graphene layers across their area. Polycrystalline Ni thin films are used and the graphene ...

Reina Ceeco, Alfonso

2010-01-01T23:59:59.000Z

59

Plasma Enhanced Chemical Vapor Deposition on Living Substrates: Development, Characterization, and Biological Applications  

E-Print Network [OSTI]

This dissertation proposed the idea of “plasma-enhanced chemical vapor deposition on living substrates (PECVD on living substrates)” to bridge the gap between the thin film deposition technology and the biological and living substrates. This study...

Tsai, Tsung-Chan 1982-

2012-12-05T23:59:59.000Z

60

Understanding the Nanotube Growth Mechanism: A Strategy to Control Nanotube Chirality during Chemical Vapor Deposition Synthesis  

E-Print Network [OSTI]

during chemical vapor deposition synthesis must focus on controlling the structure of the nucleated nanotube seeds. DFT and RMD simulations demonstrate the viability of using the structures of catalyst particles over which nanotube growth proceeds...

Gomez Gualdron, Diego Armando 1983-

2012-10-26T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Bilayer graphene growth by low pressure chemical vapor deposition on copper foil  

E-Print Network [OSTI]

Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer ...

Fang, Wenjing, S.M. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

62

Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia  

E-Print Network [OSTI]

pressure chemical vapor deposition. Experiments were conducted in a belt furnace; static experiments, in particular, is used for tool coating, solar-control films, and micro- electronic applications. Optically

63

Advanced Chemical Heat Pumps Using Liquid-Vapor Reactions  

E-Print Network [OSTI]

ically feasible systems have significant potential advantage over conventional tech nology. An electric drive reactive heat pump can use smaller heat exchangers and compressor than a vapor-compression machine, and have more flexible operating... are discussed, and performance is bounded. A discussion on liquid-vapor equilibria is included as introduction to the systems I- considered. The electric drive heat pump and TA are promising systems; the TA has potential for higher COP than absorption...

Kirol, L.

64

Electrochemistry of chemical vapor deposited tungsten films with relevance to chemical mechanical polishing  

SciTech Connect (OSTI)

The electrochemical behavior of chemically vapor deposited tungsten films in solutions of interest to tungsten chemical mechanical polishing has been investigated using dc potentiodynamic polarization, linear polarization, and Tafel methods. It was found that in the absence of an oxidizer, the tungsten surface was passivated most effectively at acidic pH values. At pH 2 or 4, a WO{sub 2}/WO{sub 3} duplex oxide layer of less than 50 A thickness was detected over the tungsten layer by X-ray photoelectron spectroscopy. The oxide layer formed at pH 2 was much thicker, and had better passivity compared to the oxide formed at pH 4. Addition of H{sub 2}O{sub 2} at pH 2 or 4 resulted in a dramatic increase in tungsten dissolution.

Kneer, E.A.; Raghunath, C.; Raghavan, S. [Univ. of Arizona, Tucson, AZ (United States). Dept. of Materials Science and Engineering; Jeon, J.S. [Advanced Micro Devices Inc., Sunnyvale, CA (United States)

1996-12-01T23:59:59.000Z

65

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers  

SciTech Connect (OSTI)

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y. [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)] [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)

2013-10-28T23:59:59.000Z

66

Pulsed chemical vapor deposition of Cu{sub 2}S into a porous TiO{sub 2} matrix  

SciTech Connect (OSTI)

Chalcocite (Cu{sub 2}S) has been deposited via pulsed chemical vapor deposition (PCVD) into a porous TiO{sub 2} matrix using hydrogen sulfide and a metal-organic precursor. The precursor used is similar to the more common Cu(hfac)(tmvs) precursor, but it is fluorine free and exhibits increased thermal stability. The simultaneous exposure of the substrate to the copper precursor and hydrogen sulfide resulted in nonuniform Cu{sub 2}S films with a temperature independent deposition rate implying gas phase reaction kinetics. The exposure of mesoporous TiO{sub 2} and planar ZnO to alternating cycles of the copper precursor and hydrogen sulfide resulted in a PCVD film that penetrated fully into the porous TiO{sub 2} layer with a constant deposition rate of 0.08 nm/cycle over a temperature range of 150-400 deg. C The chalcocite (Cu{sub 2}S) stoichiometry was confirmed with extended x-ray absorption fine structure measurements (EXAFS) and x-ray photoelectron spectroscopy. Calculations of the EXAFS spectrum for different Cu{sub x}S phases show that EXAFS is sensitive to the different phase stoichiometries. Optical absorption measurements of CVD thin films using photothermal deflection spectroscopy show the presence of a metallic copper-poor phase for gas phase nucleated films less than 100 nm thick and a copper-rich semiconducting phase for thicknesses greater than 100 nm with a direct band gap of 1.8 eV and an indirect bandgap of 1.2 eV.

Carbone, I.; Zhou, Q.; Vollbrecht, B.; Yang, L.; Medling, S.; Bezryadina, A.; Bridges, F.; Alers, G. B.; Norman, J. T.; Kinmen, T. [Department of Physics, University of California at Santa Cruz, 1156 High St., Santa Cruz, California 95064 (United States); Air Products Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011 (United States); Department of Physics, Colorado School of Mines, 1500 Illinois St., Golden, Colorado 80401 (United States)

2011-09-15T23:59:59.000Z

67

Chemical vapor detection with a multispectral thermal imager  

E-Print Network [OSTI]

military programs to adapt the FLIR for chemical de- tection.25 A navy FLIR has been deployed for chemical sensing.4 It is a standard common module FLIR modified with bandpass spectral filters. Agent detection

Chang, Chein-I

68

Solar-induced chemical vapor deposition of diamond-type carbon films  

DOE Patents [OSTI]

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

1994-09-13T23:59:59.000Z

69

Solar-induced chemical vapor deposition of diamond-type carbon films  

DOE Patents [OSTI]

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

Pitts, J. Roland (Lakewood, CO); Tracy, C. Edwin (Golden, CO); King, David E. (Lakewood, CO); Stanley, James T. (Beaverton, OR)

1994-01-01T23:59:59.000Z

70

Chemical-vapor deposition of complex oxides: materials and process development  

SciTech Connect (OSTI)

This is the final report of a six-month, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL) part of the Advanced Materials Laboratory (AML). The demand for higher performance and lower cost in electronics is driving the need for advanced materials and consequent process integration. Ceramic thin-film technology is becoming more important in the manufacture of microelectronic devices, photovoltaics, optoelectronics, magneto-optics, sensors, microwave, and radio frequency communication devices, and high-Tc superconducting tapes. A flexible processing approach for potential large-scale manufacturing of novel electronic ceramic thin films is desirable. Current thin- film deposition technologies based on physical vapor-deposition techniques are limited in scale potential and have limited control of processing parameters. The lack of control over multiple process parameters inhibits the versatility and reproducibility of the physical vapor deposition processes applied to complex oxides. Chemical vapor deposition is emerging as a viable approach for large- scale manufacturing of electronic materials. Specifically, the ability to control more processing parameters with chemical vapor deposition than with other processing techniques provides the reliability and material property reproducibility required by manufacturing. This project sought to investigate the chemical vapor deposition of complex oxides.

Muenchausen, R.

1996-11-01T23:59:59.000Z

71

Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor: Experimental measurements, model  

E-Print Network [OSTI]

Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor-wafer, lamp-heated chemical vapor deposition system were used to study the wafer temperature response to gas composition. A physically based simulation procedure for the process gas and wafer temperature was developed

Rubloff, Gary W.

72

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION  

E-Print Network [OSTI]

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION Barbara Terheiden,1* Thomas Kunz,2 Ingo Burkert2 , Renate Horbelt,1, D-91058 Erlangen, Germany ABSTRACT: Convection assisted chemical vapor deposition (CoCVD) is applied

73

Pulsed plasma-Used injection sources for remote plasma activated chemical vapor deposition  

E-Print Network [OSTI]

Pulsed plasma- Used injection sources for remote plasma activated chemical vapor deposition Mark J, Urbana, Illinois 61801 (Received 21 October 1992; accepted for publication 12 January 1993) Remote plasma the substrate is immersed in the plasma. This selectivity can be compromised if the deposition gases, which

Kushner, Mark

74

Cobalt Ultrathin Film Catalyzed Ethanol Chemical Vapor Deposition of Single-Walled Carbon Nanotubes  

E-Print Network [OSTI]

Cobalt Ultrathin Film Catalyzed Ethanol Chemical Vapor Deposition of Single-Walled Carbon Nanotubes (SWNTs) using a cobalt ultrathin film (1 nm) as the catalyst and ethanol as carbon feedstock flow during the growth. The trace amount of self-contained water (0.2-5 wt %) in ethanol may act

Hone, James

75

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire  

E-Print Network [OSTI]

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films Cedex 9, France (Dated: 15 March 2011) Uniform single layer graphene was grown on single-crystal Ir. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown

Boyer, Edmond

76

Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition  

E-Print Network [OSTI]

Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor) In this letter we demonstrate the use of oxygen as a dopant in silicon to create semi-insulating, crystalline of the films exhibit classical characteristics of space-charge-limited current associated with insulators

77

An atomic-scale analysis of catalytically-assisted chemical vapor deposition of carbon nanotubes  

E-Print Network [OSTI]

An atomic-scale analysis of catalytically-assisted chemical vapor deposition of carbon nanotubes M Growth of carbon nanotubes during transition-metal particles catalytically-assisted thermal decomposition of various nanotube surface and edge reactions (e.g. adsorption of hydrocarbons and hydrogen onto the surface

Grujicic, Mica

78

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma  

E-Print Network [OSTI]

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency Semiconductor, Eden Prairie, MN, USA Received 10 July 2002; accepted 14 July 2002 Abstract Silicon carbide films; Nanomaterials; Silicon carbide; Thermal plasmas; Thin films; Si tetrachlorine precursor Silicon carbide has

Zachariah, Michael R.

79

Initiated chemical vapor deposition of fluoropolymer coatings for the surface modification of complex geometries  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) is a one-step, soventless process that can be used to produce polymeric thin films. The iCVD technique has been used to polymerize a wide variety of vinyl monomers such as glycidyl ...

Gupta, Malancha, 1980-

2007-01-01T23:59:59.000Z

80

Z .Thin Solid Films 392 2001 231 235 Atmospheric pressure chemical vapor deposition of  

E-Print Network [OSTI]

of electrochromic tungsten oxide films Roy G. Gordona,U , Sean Barryb , Jeffrey T. Bartona , Randy N.R. Broomhall oxide, WO , is a coloring layer commonly used in electrochromic windows and displays. Successful: Chemical vapor deposition; Tungsten; Oxides; Electrochromism 1. Introduction Tungsten oxide is a key

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films  

E-Print Network [OSTI]

. Published April 28, 2010. Metal silicides such as TiSi2 and CoSi2 have been commonly used as the contactsFormation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride as the intermediate for subsequent conversion into nickel silicide NiSi , which is a key material for source, drain

82

Low temperature junction growth using hot-wire chemical vapor deposition  

DOE Patents [OSTI]

A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

2014-02-04T23:59:59.000Z

83

Chemical vapor deposition of W-Si-N and W-B-N  

DOE Patents [OSTI]

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

1999-06-29T23:59:59.000Z

84

Parallel Reacting Flow Calculations for Chemical Vapor Deposition Reactor Design 1  

E-Print Network [OSTI]

National Laboratories Albuquerque, NM 87185­1111 (To be published in Proceedings of the International at the synthesis of two important research areas: 3D flow and transport modeling of reactors and the simulationParallel Reacting Flow Calculations for Chemical Vapor Deposition Reactor Design 1 Andrew G

Devine, Karen

85

Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene  

E-Print Network [OSTI]

Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene a scalable method to produce large-area graphene, CVD-grown graphene has heretofore exhibited inferior of CVD-grown graphene in which two important sources of disorder, namely grain boundaries and processing

Hone, James

86

Compensator Control For Chemical Vapor Deposition Film Growth Using Reduced Order Design Models  

E-Print Network [OSTI]

in a high pressure chemical vapor deposition (HPCVD) reactor that in­ cludes multiple species and controls optoelectronic integrated circuits. This can sometimes be addressed, in part, through open­loop optimization [7 reactor with real­time sensing and control as an innovative feature of this proto­ type reactor. Previous

87

Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol  

E-Print Network [OSTI]

carbide,8 to chemical vapor deposition (CVD) of hydrocarbon precursors on transition metals,9-13 economic up to wafer scale,14,15 nickel and copper are the two most commonly used metal substrates. DueC) restricts the growth of graphene to the metal surface.12,17 The uniformity and high quality of the resultant

Maruyama, Shigeo

88

A tunable MWIR laser remote sensor for chemical vapor detection  

Science Journals Connector (OSTI)

The Air Force vision for Global Virtual Presence suggests a need for active remote sensing systems that provide both global coverage and the ability to detect multiple gaseous chemical species at low concentration from a significant standoff distance. The system will need to have acceptable weight volume and power characteristics as well as a long operating lifetime for integration with various surveillance platforms. Laser based remote sensing systems utilizing the differential absorption lidar (DIAL) technique are promising for long range chemical sensing applications. Recent advancements in pulsed diode pumped solid state laser (DPSSL) technology and in tunable optical parametric oscillators (OPO) make broadly tunable laser transmitters possible for the DIAL system. Also the characteristic narrow spectral bandwidth of these laser devices provides high measurement sensitivity and spectral selectivity with the potential to avoid interfering species. Rocketdyne has built and tested a tunable midwave infrared (MWIR) DIAL system using DPSSL/OPO technology. The key to the system is a novel tuning and line narrowing technology developed for the OPO. The tuning system can quickly adjust to the desired wavelength and precisely locate a narrow spectral feature of interest. Once the spectral feature is located a rapid dither tuning technique is employed. The laser pulses are tuned “on” and “off” the spectral resonance of a molecule with precise and repeatable performance as required to make the DIAL measurement. To date the breadboard system has been tested by measuring methane ethane and sulfur dioxide in a calibrated gas cell at a range of 60 meters.

Thomas L. Bunn; Patricia M. Noblett; William D. Otting

1998-01-01T23:59:59.000Z

89

The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition  

SciTech Connect (OSTI)

InGaAsN alloys are a promising material for increasing the efficiency of multi-junction solar cells now used for satellite power systems. However, the growth of these dilute N containing alloys has been challenging with further improvements in material quality needed before the solar cell higher efficiencies are realized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and poor surface morphologies. The growth rate was found to depend on not only the total group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon tetrachloride and dimethylzinc were effective for p-type doping. Disilane was not an effective n-type dopant while SiCl4 did result in n-type material but only a narrow range of electron concentrations (2-5e17cm{sup -3}) were achieved.

ALLERMAN,ANDREW A.; BANKS,JAMES C.; GEE,JAMES M.; JONES,ERIC D.; KURTZ,STEVEN R.

1999-09-16T23:59:59.000Z

90

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors  

SciTech Connect (OSTI)

Two schemes of nucleation and growth of gallium nitride on Si(111) substrates are investigated and the structural and electrical properties of the resulting films are reported. Gallium nitride films grown using a 10{endash}500 nm-thick AlN buffer layer deposited at high temperature ({similar_to}1050{degree}C) are found to be under 260{endash}530 MPa of tensile stress and exhibit cracking, the origin of which is discussed. The threading dislocation density in these films increases with increasing AlN thickness, covering a range of 1.1 to {gt}5.8{times}10{sup 9}cm{sup {minus}2}. Films grown using a thick, AlN-to-GaN graded buffer layer are found to be under compressive stress and are completely crack free. Heterojunction field effect transistors fabricated on such films result in well-defined saturation and pinch-off behavior with a saturated current of {similar_to}525 mA/mm and a transconductance of {similar_to}100 mS/mm in dc operation. {copyright} 2001 American Institute of Physics.

Marchand, H.; Zhao, L.; Zhang, N.; Moran, B.; Coffie, R.; Mishra, U. K.; Speck, J. S.; DenBaars, S. P.; Freitas, J. A.

2001-06-15T23:59:59.000Z

91

Proposed Occupational Exposure Limits for Non-Carcinogenic Hanford Waste Tank Vapor Chemicals  

SciTech Connect (OSTI)

A large number of volatile chemicals have been identified in the headspaces of tanks used to store mixed chemical and radioactive waste at the U.S. Department of Energy (DOE) Hanford Site, and there is concern that vapor releases from the tanks may be hazardous to workers. Contractually established occupational exposure limits (OELs) established by the Occupational Safety and Health Administration (OSHA) and American Conference of Governmental Industrial Hygienists (ACGIH) do not exist for all chemicals of interest. To address the need for worker exposure guidelines for those chemicals that lack OSHA or ACGIH OELs, a procedure for assigning Acceptable Occupational Exposure Limits (AOELs) for Hanford Site tank farm workers has been developed and applied to a selected group of 57 headspace chemicals.

Poet, Torka S.; Timchalk, Chuck

2006-03-24T23:59:59.000Z

92

Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications  

SciTech Connect (OSTI)

Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2010, and the LHC upgrades expected in 2015, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed and operational in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

Rainer Wallny

2012-10-15T23:59:59.000Z

93

Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications  

SciTech Connect (OSTI)

Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2013, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

Harris Kagan; K.K. Gan; Richard Kass

2009-03-31T23:59:59.000Z

94

Metal organic chemical vapor deposition of 111-v compounds on silicon  

DOE Patents [OSTI]

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Vernon, Stanley M. (Wellesley, MA)

1986-01-01T23:59:59.000Z

95

The growth characteristics of microcrystalline Si thin film deposited by atmospheric pressure plasma-enhanced chemical vapor deposition  

Science Journals Connector (OSTI)

Microcrystalline silicon thin film was grown by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) ... with a cylindrical rotary electrode supplied with 150 MHz very-high-frequency power. T...

Jung-Dae Kwon

2013-11-01T23:59:59.000Z

96

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)  

Science Journals Connector (OSTI)

Hydrogenated microcrystalline silicon (?c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition ra...

BingQing Zhou; MeiFang Zhu; FengZhen Liu…

2008-04-01T23:59:59.000Z

97

Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy  

SciTech Connect (OSTI)

The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6-0.8 eV are observed at temperatures of T = 77 and 300 K. The photoelectric, current-voltage, and capacitance characteristics of these heterostructures are studied in detail. The photosensitivity is examined with photodetectors operating in the photovoltaic mode in the spectral range of 0.9-2.0 {mu}m. The sensitivity maximum at room temperature is observed at a wavelength of 1.55 {mu}m. The quantum efficiency, detectivity, and response time of the photodetectors were estimated. The quantum efficiency and detectivity at the peak of the photosensitivity spectrum are as high as {eta} = 0.6-0.7 and D{sub {lambda}max}{sup *} = (5-7) Multiplication-Sign 10{sup 10} cm Hz{sup 1/2} W{sup -1}, respectively. The photodiode response time determined as the rise time of the photoresponse pulse from 0.1 to the level 0.9 is 100-200 ps. The photodiode transmission bandwidth is 2-3 GHz. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.

Mikhailova, M. P.; Andreev, I. A., E-mail: igor@iropt9.ioffe.ru; Ivanov, E. V.; Konovalov, G. G.; Grebentshikova, E. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Hulicius, E.; Hospodkova, A.; Pangrac, Y. [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)] [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)

2013-08-15T23:59:59.000Z

98

Electronic parameters and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs by metalorganic vapor phase epitaxy  

Science Journals Connector (OSTI)

We report a comprehensive study of the optical and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs substrates by metalorganic vapor phase epitaxy which allowed the determination of the electronic parameters appropriate for such quantum wells. High-resolution x-ray diffractometry studies indicate an excellent crystal quality and good periodicity for the multiquantum wells and provided their structural parameters accurately. The photoreflectance spectra exhibit all the allowed and almost all the weakly allowed optical transitions between the confined hole and electron states. From an analysis of the photoreflectance spectra it is shown that the quantum well interfaces have an abruptness better than ±1 ML. Photoluminescence spectroscopy was also performed to evaluate independently the roughness of the interfaces and multiquantum well period reproducibility. For a 25-period multiquantum well structure with a well width of 55 Å, a photoluminescence linewidth of 12.5 meV, which corresponds to a combined well-width fluctuation and interface roughness of less than ±1 monolayer over the 25 periods, proves the achievement of heterointerfaces with excellent interfacial quality. From a detailed analysis of the high-order transitions observed in the photoreflectance spectra we determined key quantum well electronic parameters, such as, the heavy-hole valence-band offset Qv=0.33±0.02, the transverse GaAs heavy-hole effective mass mhh=(0.95±0.02)m0, and the light-hole effective mass mlh=0.08m0 in ?111? directions, for ?111?-oriented GaAs/AlxGa1-xAs quantum well structures.

Soohaeng Cho; A. Sanz-Hervás; A. Majerfeld; B. W. Kim

2003-07-10T23:59:59.000Z

99

Continuous growth of single-wall carbon nanotubes using chemical vapor deposition  

DOE Patents [OSTI]

The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Grigorian, Leonid (Raymond, OH); Hornyak, Louis (Evergreen, CO); Dillon, Anne C (Boulder, CO); Heben, Michael J (Denver, CO)

2008-10-07T23:59:59.000Z

100

Continuous growth of single-wall carbon nanotubes using chemical vapor deposition  

DOE Patents [OSTI]

The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

2014-09-23T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Electrochromic properties of iron oxide thin films prepared by chemical vapor deposition  

SciTech Connect (OSTI)

Iron oxide thin films were prepared by chemical vapor deposition. The source material was iron (III) acetylacetonate. The Fe{sub 2}O{sub 3} films were produced at a substrate temperature above 200 C. The films deposited at a substrate temperature above 300 C were polycrystalline {beta}-Fe{sub 2}O{sub 3}. Reduction and oxidation of the amorphous films in a 0.3 M LiClO{sub 4} propylene carbonate solution caused desirable changes in optical absorption. Coulometry indicated that the coloration efficiency was 6.0 to 6.5 cm{sup 2}/C.

Maruyama, Toshiro; Kanagawa, Tetsuya [Kyoto Univ. (Japan). Dept. of Chemical Engineering

1996-05-01T23:59:59.000Z

102

Improved process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition  

DOE Patents [OSTI]

A specially designed apparatus provides a steep thermal gradient across the thickness of fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

Lackey, W.J. Jr.; Caputo, A.J.

1984-09-07T23:59:59.000Z

103

Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions  

SciTech Connect (OSTI)

Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.

Roy, T.; Hesabi, Z. R.; Joiner, C. A.; Vogel, E. M. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Liu, L.; Gu, G. [Department of Electrical Engineering and Computer Science, University of Tennessee, 1520 Middle Drive, Knoxville, Tennessee 37996 (United States); Barrera, S. de la; Feenstra, R. M. [Department of Physics, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States); Chakrabarti, B. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Rd., Richardson, Texas 75080 (United States)

2014-03-24T23:59:59.000Z

104

Characterization and tribological application of diamond-like carbon (DLC) films prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique  

Science Journals Connector (OSTI)

Diamond-like carbon (DLC) films were successfully prepared on glass substrates and surfaces of selenium drums via radio frequency plasma enhanced chemical vapor deposition method. The...

Ning Cao; Zhen-yi Fei; Yong-xin Qi; Wen-wen Chen…

2009-12-01T23:59:59.000Z

105

Doping of gallium nitride using disilane  

Science Journals Connector (OSTI)

Keywords: disilane, gallium nitride, metalorganic chemical vapor deposition, organometallic vapor phase epitaxy, silicon doping

A. E. Wickenden; L. B. Rowland; K. Doverspike; D. K. Gaskill; J. A. Freitas, Jr.; D. S. Simons; P. H. Chi

1995-11-01T23:59:59.000Z

106

Selective deposition of silicon and silicon-germanium alloys by rapid thermal chemical vapor deposition  

SciTech Connect (OSTI)

Selective deposition of SiGe alloys by rapid thermal deposition has been studied using a commercially available Rapid Thermal Chemical Vapor Deposition (RTCVD) cluster tool. The precursors used in this work were dichlorosilane and germane diluted in either hydrogen or argon. An initial characterization was performed to find the appropriate temperature and GeH{sub 4} flow ranges to deposit epitaxial layers with low surface roughness. For layers with higher germanium concentration lower deposition temperatures are required to minimize surface roughness. The effects of the dilutant gas on the deposition were examined. An H{sub 2} dilutant affects the deposition by consuming chlorine released by the SiCl{sub 2}H{sub 2} and forming HCl. When Ar is used as the dilutant, more chlorine is available for other reactions that can result in etching of the silicon surface. Finally, the effects of pre-deposition treatment were determined. When compared to a wet HF dip, a gas/vapor phase HF/methanol native oxide removal treatment appears to increase the initiation time for the epitaxial deposition reaction. This is most likely due to increased fluorine termination of the surface. When a wet HF or HF/methanol native oxide removal is followed by a UV-Cl{sub 2} process, the deposition reaction initiation time is reduced. The UV-Cl{sub 2} process was also found to etch silicon through the native oxide.

Grant, J.M.; Ang, M.; Allen, L.R. [Sharp Microelectronics Technology, Inc., Camas, WA (United States)

1996-12-01T23:59:59.000Z

107

Gas-phase silicon atom densities in the chemical vapor deposition of silicon from silane  

SciTech Connect (OSTI)

Silicon atom number density profiles have been measured using laser-induced fluorescence during the chemical vapor deposition of silicon from silane. Measurements were obtained in a rotating-disk reactor as a function of silane partial pressure and the amount of hydrogen added to the carrier gas. Absolute number densities were obtained using an atomic absorption technique. Results were compared with calculated density profiles from a model of the coupled fluid flow, gas-phase and surface chemistry for an infinite-radius rotating disk. An analysis of the reaction mechanism showed that the unimolecular decomposition of SiH{sub 2} is not the dominant source of Si atoms. Profile shapes and positions, and all experimental trends are well matched by the calculations. However, the calculated number density is up to 100 times smaller than measured.

Coltrin, M.E.; Breiland, W.G.; Ho, P.

1993-12-31T23:59:59.000Z

108

Characterization of Chemically Vapor Deposited Silicon Nitride Films from Disilane and Ammonia  

Science Journals Connector (OSTI)

Amorphous silicon nitride films a:SiNx were prepared by low pressure chemical vapor deposition (LPCVD) from disilane ( Si2H6) and ammonia ( NH3). Most of the depositions were performed at 600° C with various NH3/Si2H6 gas ratios ranging from 4 to 50. Different deposits with composition (x= N/Si) ranging from silicon-rich to stoichiometric silicon nitride were characterized by means of infrared spectroscopy (FTIR), ellipsometry, electron energy loss spectroscopy (EELS), and their structure analysed by transmission electron microscopy (TEM). Transmission infrared measurements showed low hydrogen content (x= N/Si) and density of the films were correlated with their refractive index and discussed.

Redhouane Henda; Larbi Laanab; Emmanuel Scheid; Robert Fourmeaux

1995-01-01T23:59:59.000Z

109

Selective charge doping of chemical vapor deposition-grown graphene by interface modification  

SciTech Connect (OSTI)

The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11}?cm{sup ?2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.

Wang, Shengnan, E-mail: wang.shengnan@lab.ntt.co.jp; Suzuki, Satoru; Furukawa, Kazuaki; Orofeo, Carlo M.; Takamura, Makoto; Hibino, Hiroki [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)] [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

2013-12-16T23:59:59.000Z

110

In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition  

SciTech Connect (OSTI)

Due to its unique electronic properties and wide spectrum of promising applications, graphene has attracted much attention from scientists in various fields. Control and engineering of graphene’s semiconducting properties is considered to be the key of its applications in electronic devices. Here, we report a novel method to prepare in situ nitrogen-doped graphene by microwave plasma assisted chemical vapor deposition (CVD) using PDMS (Polydimethylsiloxane) as a solid carbon source. Based on this approach, the concentration of nitrogen-doping can be easily controlled via the flow rate of nitrogen during the CVD process. X-ray photoelectron spectroscopy results indicated that the nitrogen atoms doped into graphene lattice were mainly in the forms of pyridinic and pyrrolic structures. Moreover, first-principles calculations show that the incorporated nitrogen atoms can lead to p-type doping of graphene. This in situ approach provides a promising strategy to prepare graphene with controlled electronic properties.

Wang, Chundong; Zhou, Yungang; He, Lifang; Ng, Tsz-Wai; Hong, Guo; Wu, Qi-Hui; Gao, Fei; Lee, Chun-Sing; Zhang, Wenjun

2013-01-21T23:59:59.000Z

111

Structure control of carbon nanotubes using radio-frequency plasma enhanced chemical vapor deposition  

Science Journals Connector (OSTI)

Carbon nanotube structures such as tube diameter, growth site, and formation density are controlled using radio-frequency (RF, 13.56 MHz) plasma enhanced chemical vapor deposition (RF-PECVD) method. We have produced uniformly well-aligned multi-walled carbon nanotubes (MWNTs) grown over the large scale area and linearly arrayed \\{MWNTs\\} grown in a selected area without any highly-sophisticated patterning process. In our RF-PECVD experiment, furthermore, individually grown single-walled carbon nanotubes (SWNTs) or their thin bundles are synthesized for the first time within the scope of the PECVD methods. These results indicate that PECVD method provides the high potential for the further development of nano-technology.

T. Kato; G.-H. Jeong; T. Hirata; R. Hatakeyama

2004-01-01T23:59:59.000Z

112

Capillary - Discharge Based Hand-Held Detector For Chemical Vapor Monitoring  

DOE Patents [OSTI]

A handheld/portable detector for chemical vapor monitoring includes a housing and a discharge chamber that is established therein. The plasma discharge has a relatively small volume, e.g., in the micro-liter range. A first electrode and a second electrode are disposed within the discharge chamber and a discharge gap is established therebetween. A sample gas tube is in fluid communication with the discharge chamber and provides a sample gas to the discharge chamber. Also, a plasma gas tube is in fluid communication with the discharge chamber and provides a plasma gas thereto. Accordingly, the plasma gas can be used to maintain microplasma discharge between the electrodes and the sample gas can be introduced into the microplasma discharge. A spectrometer optically connected to the handheld/portable detector is used to measure the radiation emitted by the sample gas when subjected to the microplasma discharge.

Duan, Yixiang (White Rock, NM)

2005-05-31T23:59:59.000Z

113

Life cycle cost study for coated conductor manufacture by metal organic chemical vapor deposition  

SciTech Connect (OSTI)

The purpose of this report is to calculate the cost of producing high temperature superconducting wire by the Metal Organic Chemical Vapor Deposition (MOCVD) process. The technology status is reviewed from the literature and a plant conceptual design is assumed for the cost calculation. The critical issues discussed are the high cost of the metal organic precursors, the material utilization efficiency and the capability of the final product as measured by the critical current density achieved. Capital, operating and material costs are estimated and summed as the basis for calculating the cost per unit length of wire. Sensitivity analyses of key assumptions are examined to determine their effects on the final wire cost. Additionally, the cost of wire on the basis of cost per kiloampere per meter is calculated for operation at lower temperatures than the liquid nitrogen boiling temperature. It is concluded that this process should not be ruled out on the basis of high cost of precursors alone.

Chapman, J.N.

1999-07-13T23:59:59.000Z

114

Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers  

SciTech Connect (OSTI)

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

1998-09-22T23:59:59.000Z

115

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time  

E-Print Network [OSTI]

; accepted 14 June 2005; published 18 July 2005 Gallium nitride and its alloys promise to be key materials.1116/1.1993616 I. INTRODUCTION In recent years, gallium-nitride GaN - and aluminum- gallium-nitride AlGaN -based are grown at high temperatures e.g., up to 1100 °C using large concentrations of H2 carrier and NH3 N source

Rubloff, Gary W.

116

Synthesis of carbon nanotubes on diamond-like carbon by the hot filament plasma-enhanced chemical vapor deposition method  

E-Print Network [OSTI]

by laser ablation of carbon rods, direct current arc-discharge between electrodes, or by chemical vapor emission scanning electron microscopy (FE-SEM), high resolution transmission scanning electron micro- scopy natural oxide. The synthesis of the DLC films was carried out using 13.56 MHz RF-PECVD. Prior to the DLC

Hong, Byungyou

117

Growth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from `silacycllobutane  

E-Print Network [OSTI]

, and TPS resulted in single crystal layer" on Si ( 111) only up to a thickness of 2000 h;. Highly orientedGrowth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from grown by SCB at a temperature of 800 "C. The progress of SiC/Si heterojunction devices has been C3HsSiH2

Steckl, Andrew J.

118

Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia  

Science Journals Connector (OSTI)

Polycrystalline Fe3N films have been grown via chemical vapor deposition (CVD) on 50-?m thick polycrystalline Ti substrates using iron acetylacetonate (IAA) and anhydrous ammonia (NH3) in a cold-wall vertical pancake-style reactor. X-ray diffraction data indicated that single phase Fe3N was present in films deposited at and above 600°C; below this temperature no deposition occurred. The composition of the Fe3N films did not vary with changes in the deposition temperature, the NH3 flow rate or the deposition rate at a constant deposition pressure of 100 Torr. The surface macrostructure of the as-deposited films was independent of the deposition temperature and was very similar to that of the uncoated Ti substrate. The microstructure of the films was porous with a thickness variation of ?1 ?m across the surface of the films. Larger grains were produced at 600 and 800°C, while smaller and more uniform grains were produced at 700°C. Energy dispersive X-ray data indicated that films deposited at and above 600°C contained low levels of both carbon and oxygen.

S.L. Roberson; D. Finello; A.D. Banks; R.F. Davis

1998-01-01T23:59:59.000Z

119

Chemical vapor deposition of amorphous semiconductor films. Semiannual report, 1 May 1984-31 October 1984  

SciTech Connect (OSTI)

This report describes the results of research done by the Institute of Energy Conversion for the Solar Energy Research Institute in 1984 on high-efficiency, stable, amorphous silicon solar cells, fabricated by chemical vapor deposition (CVD) from disilane at high growth rates. The kinetics of CVD with higher order silanes were modelled for a tubular reactor with static substrates. A gas-phase reaction network was adopted, based on published silylene insertion and decomposition pathways. Mass balances for hydrogen and all saturated silanes through octasilane were derived. Boron-doped a-Si:H p-layers were deposited by CVD at 200/sup 0/ to 250/sup 0/C. Band gap and conductivity depended strongly on the diborane fraction in the feed gas, independent of substrate temperature. The effects of intrinsic layer deposition temperature and growth rate on material properties and device performance were studied. Cell parameters of p-i-n cells were correlated with i-layer deposition temperature and growth rate. Fill factor and short-circuit current depended on deposition conditions, while open-circuit voltage did not. Effects of diborane additions to the feed gas during i-layer deposition were studied. Experimental evidence and calculations indicate high resistance at the back contact.

Baron, B.N.; Rocheleau, R.E.; Hegedus, S.S.

1985-06-01T23:59:59.000Z

120

Gas-phase reaction study of disilane pyrolysis: Applications to low pressure chemical vapor deposition  

SciTech Connect (OSTI)

The gas-phase thermal reactions during disilane decomposition at low pressure chemical vapor deposition conditions were studied from 300 to 1,000 K using resonance enhanced multiphoton ionization (REMPI) and multiphoton ionization (MPI). REMPI of gas-phase Si, mass 28, was detected from 640 to 840 K and 1 to 10 Torr, with a maximum signal intensity between 700 to 720 K. During disilane decomposition, no SiH (427.8 nm), SiH[sub 2] (494-515 nm), or SiH[sub 3] (419.0 nm) was detected. MPI of higher silanes, silenes, and silylenes were detected through mass fragments 2, 32, and 60; these species reached a maximum signal intensity 20 degrees prior to the mass-28 maximum. Modeling studies that included a detailed low pressure gas-phase kinetic scheme predict relative gas-phase partial pressures generated during disilane pyrolysis. The model predicted experimental trends in the Si partial pressure and the higher silane, silene, and silylene partial pressures.

Johannes, J.E.; Ekerdt, J.G. (Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering)

1994-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
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121

Hydrogenated amorphous silicon films produced by chemical vapor deposition: Final report  

SciTech Connect (OSTI)

Hydrogenated amorphous silicon (a-Si:H) is a technologically important semiconductor, well-suited for solar photovoltaic energy conversion and thin film device applications. While the glow discharge technique is widely used for the deposition of a-Si:H films, this work is focused on the use of the chemical vapor deposition (CVD) technique, i.e., the thermal decomposition of disilane and higher silanes, for the deposition of a-Si:H films. A simple technique for the preparation of disilane and higher silanes by using an electric discharge in monosilane under atmospheric pressure has been developed, and the discharge product can be used directly for the deposition process. The important parameters of the CVD process including the substrate temperature, the composition and flow rate of the reaction mixture, and the nature of the diluent gas for disilane, have also been investigated. The deposition rate of a-Si:H films in a helium atmosphere is considerably higher than that in a hydrogen atmosphere, and the CVD process in a helium atmosphere is well-suited for the deposition of thick a-Si:H films. The a-Si:H films deposited under various conditions have been characterized by the photoconductivity, dissolution rate, optical absorption, mechanical stress, gap state density, minority carrier diffusion length, and stability measurements. On the basis of these measurements, a-Si:H films deposited by the thermal decomposition of disilane in a helium atmosphere exhibit better structural and electronic properties than those deposited in a hydrogen atmosphere.

Not Available

1987-04-01T23:59:59.000Z

122

Cooperative Island Growth of Large Area Single-Crystal Graphene by Chemical Vapor Deposition on Cu  

SciTech Connect (OSTI)

We describe a two-step approach for suppressing nucleation of graphene on Cu using chemical vapor deposition. In the first step, as received Cu foils are oxidized in air at temperatures up to 500 C to remove surface impurities and to induce the regrowth of Cu grains during subsequent annealing in H2 flow at 1040 C prior to graphene growth. In the second step, transient reactant cooling is performed by using a brief Ar pulse at the onset of growth to induce collisional deactivation of the carbon growth species. The combination of these two steps results in a three orders of magnitude reduction in the graphene nucleation density, enabling the growth of millimeter-size single crystal graphene grains. A kinetic model shows that suppressing nucleation promotes a cooperative island growth mode that favors the formation of large area single crystal graphene, and it is accompanied by a roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random nucleation growth.

Regmi, Murari [Oak Ridge National Laboratory (ORNL); Rouleau, Christopher [Oak Ridge National Laboratory (ORNL); Puretzky, Alexander A [ORNL; Ivanov, Ilia N [ORNL; Geohegan, David B [ORNL; Chen, Jihua [ORNL; Eastman, Jeffrey [Argonne National Laboratory (ANL); Eres, Gyula [ORNL

2014-01-01T23:59:59.000Z

123

Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition  

SciTech Connect (OSTI)

We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO{sub 2} substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12 000 {mu}C/cm{sup 2}) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.

Iqbal, M. Z.; Kumar Singh, Arun; Iqbal, M. W.; Seo, Sunae; Eom, Jonghwa [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

2012-04-15T23:59:59.000Z

124

High-temperature stress measurement on chemical-vapor-deposited tungsten silicide and tungsten films  

SciTech Connect (OSTI)

Stresses in chemical-vapor-deposited tungsten silicide and tungsten films at high temperatures were measured. Tungsten silicide films were formed from WF/sub 6/ and SiH/sub 4/ or Si/sub 2/H/sub 6/. Tungsten films were formed from WF/sub 6/ and H/sub 2/. The stress in tungsten silicide films is tensile and in the order of 10/sup 9/--10/sup 10/ dynes/cm/sup 2/. For a composition ratio of Si/Wless than or equal to2.6, the stress of a film of more than 1000 A has a maximum at about 500 /sup 0/C. On the other hand, for a composition Si/W>2.9, the stress has no maximum. The maximum of the stress is caused by crystallization of the film. The stress has two components. One component is related to the difference of the thermal expansion coefficients between the film and the Si substrate. Another is related to the film crystallization. It was found that the stress concentrates in the portion of the film nearest the substrate. The stress in tungsten films also reaches a maximum at 550 /sup 0/C, similar to the tungsten silicide films. However, the cause of this behavior is not clear.

Shioya, Y.; Ikegami, K.; Maeda, M.; Yanagida, K.

1987-01-15T23:59:59.000Z

125

Delta-doping of boron atoms by photoexcited chemical vapor deposition  

SciTech Connect (OSTI)

Boron delta-doped structures in Si crystals were fabricated by means of photoexcited chemical vapor deposition (CVD). Core electronic excitation with high-energy photons ranging from vacuum ultraviolet to soft x rays decomposes B{sub 2}H{sub 6} molecules into fragments. Combined with in situ monitoring by spectroscopic ellipsometry, limited number of boron hydrides can be delivered onto a Si(100) surface by using the incubation period before the formation of a solid boron film. The boron-covered surface is subsequently embedded in a Si cap layer by Si{sub 2}H{sub 6} photo-excited CVD. The crystallinity of the Si cap layer depended on its thickness and the substrate temperature. The evaluation of the boron depth profile by secondary ion mass spectroscopy revealed that boron atoms were confined within the delta-doped layer at a concentration of 2.5 x 10{sup 20} cm{sup -3} with a full width at half maximum of less than 9 nm, while the epitaxial growth of a 130-nm-thick Si cap layer was sustained at 420 deg. C.

Akazawa, Housei [NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

2012-03-15T23:59:59.000Z

126

Reactor design for uniform chemical vapor deposition-grown films without substrate rotation  

SciTech Connect (OSTI)

A reactor vessel is described for chemical vapor deposition of a uniform semiconductor film on a substrate, comprising: a generally cylindrical reaction chamber for receiving a substrate and a flow of reaction gas capable of depositing a film on the substrate under the conditions of the chamber, the chamber having upper and lower portion and being oriented about a vertical axis; a supporting means having a substrate support surface generally perpendicular to the vertical axis for carrying the substrate within the lower portion of the reaction chamber in a predetermined relative position with respect to the upper portion of the reaction chamber, the upper portion including a cylindrically shaped confinement chamber. The confinement chamber has a smaller diameter than the lower portion of the reaction chamber and is positioned above the substrate support surface; and a means for introducing a reaction gas into the confinement chamber in a nonaxial direction so as to direct the reaction gas into the lower portion of the reaction chamber with a non-axial flow having a rotational component with respect to the vertical axis. In this way the reaction gas defines an inward vortex flow pattern with respect to the substrate surface.

Wanlass, M.

1987-03-17T23:59:59.000Z

127

As-deposited low-strain LPCVD (low-pressure, chemical-vapor-deposition) polysilicon  

SciTech Connect (OSTI)

As-deposited polysilicon films with very low residual strain (lower than 5 x 10/sup -5/) are obtained by a low-pressure, chemical-vapor-deposition (LPCVD) process. Straight polysilicon bridges 300 ..mu..m long, 1.2 ..mu..m thick, and 2 to 20 ..mu..m wide, made using this process. No buckling has been observed in any of the nearly one thousand bridges of this type made in two separate process runs. In addition, no problems of sticking between the bridges and the substrate were encountered with these structures. The polysilicon films from which the beams were fabricated were deposited by pyrolyzing silane at 605/degree/C on a phosphosilicate-glass (PSG) layer (8 wt % P). The PSG layer serves as a sacrificial layer to be subsequently etched away to free the bridge. Our research is aimed at obtaining an understanding of these relationships through consideration of the role of interfacial stresses and the kinetics of initial crystalline nucleation. The technique for producing these low-strain films is significant, however, because no high-temperature annealing steps are required to produce them. 4 refs., 4 figs.

Fan, L.S.; Muller, R.S.

1988-08-01T23:59:59.000Z

128

Simple method for preparing hydrogenated amorphous silicon films by chemical vapor deposition at atmospheric pressure  

SciTech Connect (OSTI)

An inexpensive one-step method is presented for fabricating hydrogenated amorphous silicon (a-Si:H) films with good photovoltaic properties using chemical vapor deposition (CVD) from a mixture of silane, disilane, trisilane, and higher polysilanes in hydrogen at one atmosphere total pressure. The gas mixture is generated by the action of dilute acid on magnesium silicide and used immediately in the CVD process. Thus, elaborate techniques for handling, transporting or storing the pyrophoric polysilanes are avoided. In addition, the method requires no expensive vacuum or electrical equipment. The conditions necessary for high (approx. =10%) hydrogen incorporation and very high deposition rates (50-100 A/sec) are explained. Experimental parameters are explained and properties as a function of these parameters are shown. The measurements include hydrogen content, optical, electrical and photovoltaic properties of the a-Si:H films. A chemical kinetic model is presented for this and other silane and polysilane CVD systems between about 400 and 600/sup 0/C. Both homogeneous and heterogeneous reactions are considered. The model is derived from homogeneous gas-phase silane and polysilane chemistry and predicts, in agreement with our experiments, that the homogeneous gas-phase chemistry determines the a-Si:H film growth rate under a variety of conditions. The model is sufficiently predictive to be useful in determining appropriate experimental conditions. Stable solar cells are proposed for a-Si:H and fluorine doped tin oxide which can be produced by CVD at very high deposition rates. The unstable a-Si:H/tin oxide interface is eliminated by a very thin layer of titanium nitride and oxide between the a-Si:H and tin oxide.

Ellis, F.B. Jr.

1983-01-01T23:59:59.000Z

129

Towards improved spinnability of chemical vapor deposition generated multi-walled carbon nanotubes  

E-Print Network [OSTI]

P. J. F. 1999 Carbon nanotubes and related structures: newof vapor grown carbon nanotubes and single wall nanotubes, Eto Carbon Materials in Carbon Nanotubes: Preparation and

McKee, Gregg Sturdivant Burke

2008-01-01T23:59:59.000Z

130

On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.  

SciTech Connect (OSTI)

Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are reached concerning the factors affecting the growth rate in on-line APCVD reactors. In addition, a substantial body of data was generated that can be used to model many different industrial tin oxide coating processes. These data include the most extensive compilation of thermochemistry for gas-phase tin-containing species as well as kinetic expressions describing tin oxide growth rates over a wide range of temperatures, pressures, and reactant concentrations.

Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

2006-11-01T23:59:59.000Z

131

Formation of Nickel Silicide from Direct-liquid-injection Chemical-vapor-deposited Nickel Nitride Films  

SciTech Connect (OSTI)

Smooth, continuous, and highly conformal nickel nitride (NiN{sub x}) films were deposited by direct liquid injection (DLI)-chemical vapor deposition (CVD) using a solution of bis(N,N{prime}-di-tert-butylacetamidinato)nickel(II) in tetrahydronaphthalene as the nickel (Ni) source and ammonia (NH{sub 3}) as the coreactant gas. The DLI-CVD NiNx films grown on HF-last (100) silicon and on highly doped polysilicon substrates served as the intermediate for subsequent conversion into nickel silicide (NiSi), which is a key material for source, drain, and gate contacts in microelectronic devices. Rapid thermal annealing in the forming gas of DLI-CVD NiNx films formed continuous NiSi films at temperatures above 400 C. The resistivity of the NiSi films was 15{mu}{Omega} cm, close to the value for bulk crystals. The NiSi films have remarkably smooth and sharp interfaces with underlying Si substrates, thereby producing contacts for transistors with a higher drive current and a lower junction leakage. Resistivity and synchrotron X-ray diffraction in real-time during annealing of NiNx films showed the formation of a NiSi film at about 440 C, which is morphologically stable up to about 650 C. These NiSi films could find applications in future nanoscale complementary metal oxide semiconductor devices or three-dimensional metal-oxide-semiconductor devices such as Fin-type field effect transistors for the 22 nm technology node and beyond.

Li, Z.; Gordon, R; Li, H; Shenai, D; Lavoie, C

2010-01-01T23:59:59.000Z

132

Room-temperature high radio-frequency source power effects on silicon nitride films deposited by using a plasma-enhanced chemical vapor deposition  

Science Journals Connector (OSTI)

Silicon nitride films were deposited at room temperature using a plasma-enhanced chemical vapor deposition system. In this study, the effects of radio frequency (RF) source power ranging from 200 W to ... charact...

Byungwhan Kim; Suyeon Kim

2008-10-01T23:59:59.000Z

133

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network [OSTI]

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

Nominanda, Helinda

2012-06-07T23:59:59.000Z

134

The influence of convective heat transfer on flow stability in rotating disk chemical vapor deposition reactors  

SciTech Connect (OSTI)

Flow and heat transfer of NH{sub 3} and He were studied in a rotating disk system with applications to chemical vapor deposition reactors. Flow field and disk heat flux were obtained over a range of operating conditions. Comparisons of disk convective heat transfer were made to infinite rotating disk results to appraise uniformity of transport to the disk. Important operating variables include disk spin rate, disk and enclosure temperatures, flow rate, composition, pressure, and gas mixture temperature at the reactor inlet. These variables were studied over ranges of the spin Reynolds number, Re{omega}; disk mixed convection parameter, MCP{sub w}; and wall mixed convection parameter, MCP{sub w}. Results obtained for NH{sub 3} show that increasing Re{omega} from 314.5 to 3145 increases the uniformity of rotating disk heat flux and results in thinner thermal boundary layers at the disk surface. At Re{omega}=314.5, increasing MCP{sub d} to 15 leads to significant departure from the infinite disk result with nonuniform disk heat fluxes and recirculating flow patterns; flow becomes increasingly complex at larger values of MCP{sub d}. At Re{omega} of 3145, results are closer to the infinite disk for MCP{sub d} up to 15. For large negative (hot walls) and positive (cold walls) values of MCP{sub w}, flow recirculates and there is significant deviation from the infinite disk result; nonuniformities occur at both values of Re{omega}. The influence of MCP{sub w} on flow stability is increased at larger MCP{sub d} and lower Re{omega}. To determine the influence of viscosity and thermal conductivity variation with temperature, calculations were made with He and NH{sub 3}; He transport property variation is low relative to NH{sub 3}. Results show that the flow of NH{sub 3} is less stable than that of He as MCP{sub d} is increased for MCP{sub w}=0 and Re{omega}=314.5. 16 refs., 15 figs., 1 tab.

Winters, W.S.; Evans, G.H. [Sandia National Labs., Livermore, CA (United States); Grief, R. [Univ. of California, Berkeley, CA (United States). Mechanical Engineering Dept.

1997-06-01T23:59:59.000Z

135

Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor deposition  

SciTech Connect (OSTI)

Si and Ge films can be prepared under ultrahigh vacuum conditions by chemical vapor deposition using disilane and digermane as source gases. These gases offer a high sticking probability, and are suitable for atomic layer epitaxy. Using synchrotron radiation photoemission spectroscopy and scanning tunneling microscopy, we have examined the surface processes associated with the heteroepitaxial growth of Ge/Si. The measured surface-induced shifts and chemical shifts of the Si 2p and Ge 3d core levels allow us to identify the surface species and to determine the surface chemical composition, and this information is correlated with the atomic features observed by scanning tunneling microscopy. Issues related to precursor dissociation, attachment to dangling bonds, diffusion, surface segregation, growth morphology, and pyrolytic reaction pathways will be discussed. {copyright} {ital 1997 American Vacuum Society.}

Lin, D. [Institute of Physics, National Chiao-Tung University, Hsinchu, Taiwan, Republic of (China)] [Institute of Physics, National Chiao-Tung University, Hsinchu, Taiwan, Republic of (China); Miller, T.; Chiang, T. [Department of Physics and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)] [Department of Physics and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

1997-05-01T23:59:59.000Z

136

GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition  

SciTech Connect (OSTI)

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300?°C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.

Xu, Kun; Xu, Chen, E-mail: xuchen58@bjut.edu.cn; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China)] [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Xie, Yiyang [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Jie, E-mail: jie.sun@chalmers.se [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China) [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Mikroteknologi och Nanovetenskap, Chalmers Tekniska Högskola AB, Göteborg 41296 (Sweden)

2013-11-25T23:59:59.000Z

137

Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study  

SciTech Connect (OSTI)

By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO{sub 3}) layer. After doping, both the hole and electron mobility of CVD graphene are nearly retained, resulting in significant enhancement of graphene conductivity. With coating of 10 nm MoO{sub 3}, the conductivity of CVD graphene can be increased by about 7 times, showing promising application for graphene based electronics and transparent, conducting, and flexible electrodes.

Han, Cheng [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China) [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Lin, Jiadan; Xiang, Du [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)] [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Wang, Chaocheng; Wang, Li [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China)] [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore) [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

2013-12-23T23:59:59.000Z

138

Identification of vapor-phase chemical warfare agent simulants and rocket fuels using laser-induced breakdown spectroscopy  

SciTech Connect (OSTI)

Application of laser-induced breakdown spectroscopy (LIBS) to the identification of security threats is a growing area of research. This work presents LIBS spectra of vapor-phase chemical warfare agent simulants and typical rocket fuels. A large dataset of spectra was acquired using a variety of gas mixtures and background pressures and processed using partial least squares analysis. The five compounds studied were identified with a 99% success rate by the best method. The temporal behavior of the emission lines as a function of chamber pressure and gas mixture was also investigated, revealing some interesting trends that merit further study.

Stearns, Jaime A.; McElman, Sarah E.; Dodd, James A.

2010-05-01T23:59:59.000Z

139

In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum  

E-Print Network [OSTI]

IPA is chosen as the oxygen source for the ALD in the MOCVD. Second, IPA will not react precursor pulse time. b Dependence of ALD Al2O3 growth rate on temperature. The pulse time for TMA and IPA

140

SUPPRESSION OF ANTIPHASE DISORDER IN GaAs GROWN ON RELAXED GeSi BUFFERS BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION  

E-Print Network [OSTI]

. Fitzgerald, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139. ABSTRACT Due of high-efficiency III-V solar cells. By effectively bridging the gap between the Ge and Si lattice

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Growth of highly tensile-strained Ge on relaxed InxGa1-xAs by metal-organic chemical vapor deposition  

E-Print Network [OSTI]

American Institute of Physics. DOI: 10.1063/1.3142386 In the past decade, optoelectronic devices based and near ultraviolet.10,11 For optoelectronic devices, one important physical feature is the radiative

142

Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby  

DOE Patents [OSTI]

A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

Zhang, Ji-Guang (Golden, CO); Tracy, C. Edwin (Golden, CO); Benson, David K. (Golden, CO); Turner, John A. (Littleton, CO); Liu, Ping (Lakewood, CO)

2000-01-01T23:59:59.000Z

143

E-Print Network 3.0 - aerosol chemical vapor Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

chemical and microphysical properties influence aerosol optical properties and radiative effects... distribution of aerosol extensive and intensive properties will aid ......

144

Calibrated vapor generator source  

DOE Patents [OSTI]

A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

1995-09-26T23:59:59.000Z

145

Volatilities of Actinide and Lanthanide N,NDimethylaminodiboranate Chemical Vapor Deposition  

E-Print Network [OSTI]

, Supercomputing Institute, and Chemical Theory Center, University of Minnesota, 207 Pleasant Street SE, Switzerland § The School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 South Mathews for technological applications such as capacitors, field effect transistors, displays, thermoelectric devices, light

Girolami, Gregory S.

146

In situ mass spectrometric study of pyrite (FeS{sub 2}) thin film deposition with metallorganic chemical vapor deposition  

SciTech Connect (OSTI)

Pyrite, FeS{sub 2}, thin films have been prepared by metallorganic chemical vapor deposition using tert-butyl disulfide (TBDS) and iron(III) acetylacetonate [Fe(acac){sub 3}] as the precursors and H{sub 2} as co-reactant. The reaction mechanism is studied with in situ mass spectrometry. The thermal decomposition of TBDS and Fe(acac){sub 3} has been investigated, as well as the synthesis of FeS{sub 2}. A complicated gas-phase reaction chain occurs in the deposition reaction. In the first 1--2 cm of the deposition zone, thick rough films are formed, but further downstream in the reactor a smooth FeS{sub 2} film is deposited. This remarkable change in morphology is accounted for in the proposed reaction mechanism.

Reijnen, L.; Meester, B.; Goossens, A.; Schoonman, J.

2000-05-01T23:59:59.000Z

147

Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine  

Science Journals Connector (OSTI)

We have successfully deposited SiNx:H films at temperatures as low as 350°C by the chemical-vapor-deposition (CVD) method using hexachloro-disilane (Si2Cl6) and hydrazine (N2H4). The atomic ratio (N/Si) of the film deposited at 400°C was 1.26 with a total hydrogen content of about 30 at.%. The breakdown-field strength was 5.3 MV/cm at a leakage-current density of 1 µA/cm2, and the low-field resistivity was more than 1015 ?cm. Amorphous-silicon thin-film transistors equipped with this film as the gate dielectric showed clear transfer characteristics.

Wen-Chang Yeh; Ryoichi Ishihara; Shunsuke Morishita; Masakiyo Matsumura

1996-01-01T23:59:59.000Z

148

Photoluminescence microscopy of carbon nanotubes grown by chemical vapor deposition: Influence of external dielectric screening on optical transition energies  

Science Journals Connector (OSTI)

Photoluminescence (PL) laser microscopy was applied to determine optical transition energies E11 and E22 of individual semiconducting single-walled carbon nanotubes (SWNTs) suspended on top of carbon nanotube “forests,” grown by chemical vapor deposition (CVD) on silicon substrates. A uniform increase of E11 and E22 energies by 40–55 and 24–48meV, respectively, was found for 19 different (n,m) nanotube species suspended in air or a vacuum—relative to SWNTs in a reference water-surfactant dispersion. CVD-grown SWNTs embedded in paraffin oil and 1-methylnaphthalene show nearly the same PL peak positions as SWNTs in aqueous dispersion, indicating similar dielectric screening of excitons in SWNTs in these media.

Oliver Kiowski; Sergei Lebedkin; Frank Hennrich; Sharali Malik; Harald Rösner; Katharina Arnold; Christoph Sürgers; Manfred M. Kappes

2007-02-23T23:59:59.000Z

149

Plasma-enhanced chemical vapor deposition of graphene on copper substrates  

SciTech Connect (OSTI)

A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO{sub 2} substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm{sup 2}. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

Woehrl, Nicolas, E-mail: nicolas.woehrl@uni-due.de; Schulz, Stephan [Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Straße 199, 47057 Duisburg (Germany)] [Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Straße 199, 47057 Duisburg (Germany); Ochedowski, Oliver; Gottlieb, Steven [Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstraße 1, 47057 Duisburg (Germany)] [Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstraße 1, 47057 Duisburg (Germany); Shibasaki, Kosuke [Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)] [Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

2014-04-15T23:59:59.000Z

150

Metal-Organic Heat Carrier Nanofluids  

SciTech Connect (OSTI)

Nanofluids, dispersions of metal or oxide nanoparticles in a base working fluid, are being intensively studied due to improvements they offer in thermal properties of the working fluid. However, these benefits have been erratically demonstrated and proven impacts on thermal conductivity are modest and well described from long-established effective medium theory. In this paper, we describe a new class of metal-organic heat carrier (MOHC) nanofluid that offers potential for a larger performance boost in thermal vapor-liquid compression cycles. MOHCs are nanophase porous coordination solids designed to reversibly uptake the working fluid molecules in which the MOHCs are suspended. Additional heat can be extracted in a heat exchanger or solar collector from the endothermic enthalpy of desorption, which is then released as the nanofluid transits through a power generating device such as a turboexpander. Calculations for an R123 MOHC nanofluid indicated potential for up to 15% increase in power output. Capillary tube experiments show that liquid-vapor transitions occur without nanoparticle deposition on the tube walls provided entrance Reynolds number exceeds approximately 100.

McGrail, B. Peter; Thallapally, Praveen K.; Blanchard, Jeremy; Nune, Satish K.; Jenks, Jeromy WJ; Dang, Liem X.

2013-09-01T23:59:59.000Z

151

Thermal Stability and Substitutional Carbon Incorporation far above Solid-Solubility in Si1-xCx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition  

E-Print Network [OSTI]

Cx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition using Disilane M. S. Carroll*, J. C. Sturm on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane source gas and disilane is known to produce higher silicon epitaxial growth rates for similar partial

152

Implications of the toxicity of tetramethyltin, dimethyl tin dichloride, and tin tetrachloride in selecting a suitable tin precursor in the chemical vapor deposition of tin oxide  

Science Journals Connector (OSTI)

Potential health hazards in the chemical vapor deposition of tin oxide films from tetramethylin dimethylin dichloride and tin tetrachloride have to be balanced against the benefits to solar cell fabrication. Concerns regarding the toxicity costs and physical properties of and the quality of the tin oxide films produced with these tin precursors are outlined. (AIP)

Roy G. Gordon; James W. Prescia

1988-01-01T23:59:59.000Z

153

Germania-glass-core silica-glass-cladding modified chemical-vapor deposition optical fibers: optical losses, photorefractivity, and Raman amplification  

Science Journals Connector (OSTI)

Germania-glass-core silica-glass-cladding single-mode fibers (?n as great as 0.143) with a minimum loss of 20 dB/km at 1.85 µm were fabricated by modified chemical-vapor...

Mashinsky, V M; Neustruev, V B; Dvoyrin, V V; Vasiliev, S A; Medvedkov, O I; Bufetov, I A; Shubin, A V; Dianov, E M; Guryanov, A N; Khopin, V F; Salgansky, M Yu

2004-01-01T23:59:59.000Z

154

Surface roughening in low-pressure chemical vapor deposition Jason T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang  

E-Print Network [OSTI]

Surface roughening in low-pressure chemical vapor deposition Jason T. Drotar, Y.-P. Zhao, T.-M. Lu September 2001 We examine, using (2 1)-dimensional Monte Carlo simulations, the roughening behavior roughens logarithmically with time and that the scaling exponents are, for most sets of conditions, close

Wang, Gwo-Ching

155

Optimization of the Catalytic Chemical Vapor Deposition Synthesis of Multiwall Carbon Nanotubes on FeCo(Ni)/SiO2 Aerogel Catalysts by Statistical Design of Experiments  

Science Journals Connector (OSTI)

We report on optimizing the catalytic chemical vapor deposition synthesis of multiwall carbon nanotubes (MWCNTs) from ethene over supported transition metal SiO2 nanocomposite aerogels using the statistical design of experiments (DOE) approach. ... The NIST/SEMATECH e-Handbook of Statistical Methods, http://www.itl.nist.gov/div898/handbook/ is acknowledged for DoE-related information. ...

László Vanyorek; Danilo Loche; Hajnalka Katona; Maria Francesca Casula; Anna Corrias; Zoltán Kónya; Ákos Kukovecz; Imre Kiricsi

2011-03-10T23:59:59.000Z

156

A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical vapor deposition  

E-Print Network [OSTI]

A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical February 2005 Available online 7 April 2005 Abstract The presence of thin silicon carbide intermediate of carbon atoms into the silicon carbide layer and the morphology and orientation of the diamond film

Dandy, David

157

Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials  

Science Journals Connector (OSTI)

The atmospheric pressure plasmachemical vapor deposition(CVD) system has been developed to fabricate functional thin films at very high deposition rate. The atmospheric pressure plasma in which high-density radicals are created has been effectively used to depositthin films. Combination of the newly designed rotary electrode and the 150 MHz very high frequency power supply makes it possible not only to generate the high-density atmospheric pressure plasma but also to avoid ion bombardment against the film. By virtue of these noble characteristics of the system high quality films can be fabricated at an unprecedented high deposition rate. In order to demonstrate the effectiveness of the atmospheric pressure plasmaCVD system hydrogenated amorphous silicon (a- Si:H ) films were prepared in gas mixtures containing He H 2 and SiH 4 . The results showed that homogeneous a- Si:H films grew when substrates were heated at 200?°C. Extremely high deposition rate which was more than 100 times faster than that of the conventional low-pressure plasma CVD technique was realized.

Y. Mori; K. Yoshii; H. Kakiuchi; K. Yasutake

2000-01-01T23:59:59.000Z

158

Quantum Chemical Simulations Reveal Acetylene-Based Growth Mechanisms in the Chemical Vapor Deposition Synthesis of Carbon Nanotubes  

SciTech Connect (OSTI)

Nonequilibrium quantum chemical molecular dynamics (QM/MD) simulation of early stages in the nucleation process of carbon nanotubes from acetylene feedstock on an Fe38 cluster was performed based on the density-functional tight-binding (DFTB) potential. Representative chemical reactions were studied by complimentary static DFTB and density functional theory (DFT) calculations. Oligomerization and cross-linking reactions between carbon chains were found as the main reaction pathways similar to that suggested in previous experimental work. The calculations highlight the inhibiting effect of hydrogen for the condensation of carbon ring networks, and a propensity for hydrogen disproportionation, thus enriching the hydrogen content in already hydrogen-rich species and abstracting hydrogen content in already hydrogen-deficient clusters. The ethynyl radical C2H was found as a reactive, yet continually regenerated species, facilitating hydrogen transfer reactions across the hydrocarbon clusters. The nonequilibrium QM/MD simulations show the prevalence of a pentagon-first nucleation mechanism where hydrogen may take the role of one arm of an sp2 carbon Y-junction. The results challenge the importance of the metal carbide formation for SWCNT cap nucleation in the VLS model and suggest possible alternative routes following hydrogen-abstraction acetylene addition (HACA)-like mechanisms commonly discussed in combustion synthesis.

Eres, Gyula [ORNL] [ORNL; Wang, Ying [Nagoya University, Japan] [Nagoya University, Japan; Gao, Xingfa [Institute of High Energy Physics, Chinese Academy of Sciences, China] [Institute of High Energy Physics, Chinese Academy of Sciences, China; Qian, Hu-Jun [Jilin University, Changchun] [Jilin University, Changchun; Ohta, Yasuhito [Fukui Institute of Fundamental Chemistry, Kyoto University, Kyoto 606-8103, Japan] [Fukui Institute of Fundamental Chemistry, Kyoto University, Kyoto 606-8103, Japan; Wu, Xiaona [Nagoya University, Japan] [Nagoya University, Japan; Morokuma, Keiji [Fukui Institute of Fundamental Chemistry, Kyoto University, Kyoto 606-8103, Japan] [Fukui Institute of Fundamental Chemistry, Kyoto University, Kyoto 606-8103, Japan; Irle, Stephan [WPI-Institute of Transformative Bio-Molecules and Department of Chemistry, Nagoya University, Japan] [WPI-Institute of Transformative Bio-Molecules and Department of Chemistry, Nagoya University, Japan

2014-01-01T23:59:59.000Z

159

Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane  

Science Journals Connector (OSTI)

Amorphous silicon layers have been deposited by low pressure chemical vapour deposition at 450°C using disilane as the only source gas. Simple inverted staggered thin-film transistors were made with thermal silicon dioxide as the gate insulator. Field-effect mobilities for electrons and holes were 1.4 cm2/V s and 0.1 cm2/V s, respectively. In order to obtain these high mobilities the transistor structures were carefully annealed in a hydrogen-radical rich ambient.

Paul A. Breddels; Hiroshi Kanoh; Osamu Sugiura; Masakiyo Matsumura

1990-01-01T23:59:59.000Z

160

Diameter and wall number control of carbon nanotubes by chemical vapor deposition  

SciTech Connect (OSTI)

We analyze the relationship between the average wall number (N) and the diameter (d) for carbon nanotubes (CNTs) grown by chemical vapour deposition. It is found that N depends linearly on d for diameters in the range of 2.5–10?nm, while single wall nanotubes predominate for diameters under about 2.1?nm. The linear relationship is found to depend somewhat on the growth conditions. It is also verified that the mean diameter depends on the diameter of the originating catalyst nanoparticle, and thus on the initial catalyst thickness where a thin film catalyst is used. This simplifies the characterisation of CNTs by electron microscopy. We also find a linear relationship between nanotube diameter and initial catalyst film thickness.

Xie, Rongsi; Zhong, Guofang, E-mail: gz222@cam.ac.uk; Zhang, Can; Chen, Bingan; Santiago Esconjauregui, C.; Robertson, John [Department of Engineering, University of Cambridge, Cambridge CB2 1PZ (United Kingdom)

2013-12-28T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Data for First Responder Use of Photoionization Detectors for Vapor Chemical Constituents  

SciTech Connect (OSTI)

First responders need appropriate measurement technologies for evaluating incident scenes. This report provides information about photoionization detectors (PIDs), obtained from manufacturers and independent laboratory tests, and the use of PIDs by first responders, obtained from incident commanders in the United States and Canada. PIDs are valued for their relatively low cost, light weight, rapid detection response, and ease of use. However, it is clear that further efforts are needed to provide suitable instruments and decision tools to incident commanders and first responders for assessing potential hazardous chemical releases. Information provided in this report indicates that PIDs should always be part of a decision-making context in which other qualitative and more definitive tests and instruments are used to confirm a finding. Possible amelioratory actions ranging from quick and relatively easy fixes to those requiring significant additional effort are outlined in the report.

Keith A. Daum; Matthew G. Watrous; M. Dean Neptune; Daniel I. Michael; Kevin J. Hull; Joseph D. Evans

2006-11-01T23:59:59.000Z

162

Laser-induced fluorescence measurements and kinetic analysis of Si atom formation in a rotating disk chemical vapor deposition reactor  

SciTech Connect (OSTI)

An extensive set of laser-induced fluorescence (LIF) measurements of Si atoms during the chemical vapor deposition (CVD) of silicon from silane and disilane in a research rotating disk reactor are presented. The experimental results are compared in detail with predictions from a numerical model of CVD from silane and disilane that treats the fluid flow coupled to gas-phase and gas-surface chemistry. The comparisons showed that the unimolecular decomposition of SiH[sub 2] could not account for the observed gas-phase Si atom density profiles. The H[sub 3]SiSiH [leftrightarrow] Si + SiH[sub 4] and H[sub 3]SiSiH + SiH[sub 2] [leftrightarrow] Si + Si[sub 2]H[sub 6] reactions are proposed as the primary Si atom production routes. The model is in good agreement with the measured shapes of the Si atom profiles and the trends in Si atom density with susceptor temperature, pressure, and reactant gas mixture. 33 refs., 12 figs., 3 tabs.

Ho, P.; Coltrin, M.E.; Breiland, W.G. (Sandia National Lab., Albuquerque, NM (United States))

1994-10-06T23:59:59.000Z

163

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.  

SciTech Connect (OSTI)

The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250°C, the temperature may reach 1600°C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

2013-08-01T23:59:59.000Z

164

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC  

SciTech Connect (OSTI)

The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ?10?nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ?190???m for step height h{sub S}?=?10?nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications.

Ciuk, Tymoteusz [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Cakmakyapan, Semih; Ozbay, Ekmel [Department of Electrical and Electronics Engineering, Department of Physics, Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Caban, Piotr; Grodecki, Kacper; Pasternak, Iwona; Strupinski, Wlodek, E-mail: wlodek.strupinski@itme.edu.pl [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Krajewska, Aleksandra [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Optoelectronics, Military University of Technology, Gen. S. Kaliskiego 2, 00-908 Warsaw (Poland); Szmidt, Jan [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

2014-09-28T23:59:59.000Z

165

Thermal Decomposition of Molecules Relevant to Combustion and Chemical Vapor Deposition by Flash Pyrolysis Time-of-Flight Mass Spectrometry  

E-Print Network [OSTI]

of Small Molecules by Flash Pyrolysis, University ofwas performed using flash pyrolysis vacuum-ultraviolet time-Vapor Deposition by Flash Pyrolysis Time-of-Flight Mass

Lemieux, Jessy Mario

2013-01-01T23:59:59.000Z

166

Chemical vapor deposition of amorphous semiconductor films. Semiannual report, 1 May 1983-31 October 1984  

SciTech Connect (OSTI)

This report presents an analysis of intrinsic and phosphorus-doped n-type amorphous silicon films deposited by LPCVD from disilane in a laminar flow tubular reactor. These films were analyzed using SIMs, ESR measurements, optical absorption, and conductivity in light and dark. CVD deposited i layers were used to make platinum Schottky barrier devices and hybrid cells utilizing glow discharge deposited layers in both the ITO/nip/Mo and ITO/pin/Mo configurations. The highest efficiency of hybrid cells with the ITO/ni(CVD)/p(GD)/Mo structure was approximately 1.5%. The highest efficiencies were obtained with thin i layers. The highest efficiency for the ITO/p(GD)/in(CVD)/Mo configuration was 4.0%. A chemical model was developed describing the gas phase reactions and film growth; the model quantitatively describes the effluent composition when the measured growth rate is input. Kinetic rate expressions and constants for growth from higher silanes are being determined for a wide range of reaction conditions.

Not Available

1984-03-01T23:59:59.000Z

167

Real-time optical diagnostics of graphene growth induced by pulsed chemical vapor deposition  

SciTech Connect (OSTI)

The kinetics and mechanisms of graphene growth on Ni films at 720 -880 C have been measured using fast pulses of acetylene and real-time optical diagnostics. In situ UV-Raman spectroscopy was used to unambiguously detect isothermal graphene growth at high temperatures, measure the growth kinetics with ~ 1s temporal resolution, and estimate the fractional precipitation upon cooldown for the first time. Optical reflectivity and videography provided much faster temporal resolution. Both the growth kinetics and the fractional isothermal precipitation were found to be governed by the C2H2 partial pressure in the CVD pulse for a given film thickness and temperature, with up to ~ 94% of graphene growth occurring isothermally within 1 second at 800 C at high partial pressures. At lower partial pressures, isothermal graphene growth is shown to continue 10 seconds after the gas pulse. These flux-dependent growth kinetics are described in the context of a dissolution/precipitation model, where carbon rapidly dissolves into the Ni film and later precipitates driven by gradients in the chemical potential. The combination of pulsed-CVD and real-time optical diagnostics opens new opportunities to understand and control the fast, sub-second growth of graphene on various substrates at high temperatures.

Puretzky, Alexander A [ORNL; Geohegan, David B [ORNL; Pannala, Sreekanth [ORNL; Rouleau, Christopher M [ORNL; Regmi, Murari [Oak Ridge National Laboratory (ORNL); Thonnard, Norbert [ORNL; Eres, Gyula [ORNL

2013-01-01T23:59:59.000Z

168

Crystallography of metal-organic frameworks  

Science Journals Connector (OSTI)

Recent advances in the crystallography of metal-organic frameworks (MOFs) are reviewed, including crystal growth, structural elucidation, in-situ and non-ambient crystallography.

G?ndara, F.

2014-10-28T23:59:59.000Z

169

Magnetism in metal-organic capsules  

E-Print Network [OSTI]

Quantum Spin Chains in Magnetism: Molecules to Materials, J.Magnetism in metal-organic capsules Jerry L. Atwood,* a Euan

Atwood, Jerry L.

2010-01-01T23:59:59.000Z

170

Metal-Organic Heat Carrier Nanofluids. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Organic Heat Carrier Nanofluids. Metal-Organic Heat Carrier Nanofluids. Abstract: Nanofluids, dispersions of metal or oxide nanoparticles in a base working fluid, are being...

171

Performance and analysis of amorphous silicon p-i-n solar cells made by chemical-vapor deposition from disilane  

SciTech Connect (OSTI)

The photovoltaic performance of amorphous silicon p-i-n solar cells made by chemical-vapor deposition (CVD) from disilane is reported and analyzed. Intrinsic layers were deposited at rates from 0.2 to 50 A/s at temperatures from 380 to 460 /sup 0/C with and without boron doping. Device performance was insensitive to substantial differences in disilane purity. A cell efficiency of 4% was achieved. The primary limitation to higher efficiency was low fill factor (<50%) due to high series resistance (>18 ..cap omega.. cm/sup 2/). Analysis of the series resistance indicated a contact-related resistance of 4--12 ..cap omega.. cm/sup 2/ and a photoconductive resistance composed of intrinsic layer thickness-independent (10 ..cap omega.. cm/sup 2/) and thickness-dependent terms. Analysis of the voltage dependence of the current collection indicated a fill factor of 60% would be expected in the absence of series resistance. The maximum short-circuit current of 12.5 mA/cm/sup 2/ (normalized to 100 mW/cm/sup 2/) resulted with a boron-doped i layer deposited at 440 /sup 0/C at 3.3 A/s. Modeling of the collection efficiency indicated collection widths up to 0.33 ..mu..m for boron-doped and 0.24 ..mu..m for undoped p-i-n devices. In order to achieve high-efficiency cells using CVD from disilane, the limitations imposed by low photoconductivity, a high density of states, and restricted cell design imposed by the high deposition temperatures would have to be overcome.

Hegedus, S.S.; Rocheleau, R.E.; Buchanan, W.; Baron, B.N.

1987-01-01T23:59:59.000Z

172

Mat. Res. Soc. Symp. Proc. Vol. 612 2000 Materials Research Society VOLATILE LIQUID PRECURSORS FOR THE CHEMICAL VAPOR DEPOSITION  

E-Print Network [OSTI]

. These tungsten oxide films can be used as part of electrochromic windows, mirrors or displays. Physical in microelectronics.5 CVD using both W(CO)6 vapor and oxygen gas, O2, has produced electrochromic films of tungsten

173

An in situ investigation of Si[sub x]Ge[sub 1-x] chemical vapor deposition by differential reflectance  

SciTech Connect (OSTI)

An investigation of the surface kinetic processes of low pressure chemical vapor deposition (LPCVD) of Si, Ge, and Si[sub x]Ge[sub 1[minus]x] was carried out using time-resolved differential reflectance measurements. The source gas (disilane, digermane, or mixtures of these two diluted in a helium carrier) was delivered to a heated substrate by a fast-acting modulated molecular jet valve. Thin film growth was studied in the range of 400-500[degrees]C on Si and Ge (001) substrates. The kinetics of chemisorption and of by-product desorption were determined from the surface differential reflectance signal obtained using p-polarized, high-stability HeNe probe laser. Both chemisorption and by-product desorption were fond to obey first-order kinetics. Chemisorption of the parent molecules was found to be relatively efficient and weakly temperature dependent. For pure Si and Ge, by-product desorption occurred through a single first-order reaction. Two first-order desorption steps were inferred for the Si[sub x]Ge[sub 1[minus]x] alloy surfaces. These reactions are believed to be H[sub 2] desorption from Si-like and Ge-like surface sites. However, the activation energy of the more rapid of these two steps actually decreases as the Si content of the film increases. Generally, the films were of high crystalline quality and were very well aligned with the substrate. Preferential incorporation of digermane into the film produced an alloy composition that was Ge-rich relative to the gas composition. The primary accomplishment of this work is the demonstration that the active surface layer of the Si[sub x]Ge[sub 1[minus]x] system can be monitored in situ by an optical probe under typical LPCVD conditions. The results indicate that the rate-limiting step in Si or Ge LPCVD obeys simple first-order kinetics. Further work is needed to understand fully the rate-limiting surface reaction in Si[sub x]Ge[sub 1[minus]x] LPCVD.

Sharp, J.W.

1992-01-01T23:59:59.000Z

174

Development of nanodiamond foils for H- stripping to Support the Spallation Neutron Source (SNS) using hot filament chemical vapor deposition  

SciTech Connect (OSTI)

Thin diamond foils are needed in many particle accelerator experiments regarding nuclear and atomic physics, as well as in some interdisciplinary research. Particularly, nanodiamond texture is attractive for this purpose as it possesses a unique combination of diamond properties such as high thermal conductivity, mechanical strength and high radiation hardness; therefore, it is a potential material for energetic ion beam stripper foils. At the ORNL Spallation Neutron Source (SNS), the installed set of foils must be able to survive a nominal five-month operation period, without the need for unscheduled costly shutdowns and repairs. Thus, a small foil about the size of a postage stamp is critical to the operation of SNS and similar sources in U.S. laboratories and around the world. We are investigating nanocrystalline, polycrystalline and their admixture films fabricated using a hot filament chemical vapor deposition (HFCVD) system for H- stripping to support the SNS at Oak Ridge National Laboratory. Here we discuss optimization of process variables such as substrate temperature, process gas ratio of H2/Ar/CH4, substrate to filament distance, filament temperature, carburization conditions, and filament geometry to achieve high purity diamond foils on patterned silicon substrates with manageable intrinsic and thermal stresses so that they can be released as free standing foils without curling. An in situ laser reflectance interferometry tool (LRI) is used for monitoring the growth characteristics of the diamond thin film materials. The optimization process has yielded free standing foils with no pinholes. The sp3/sp2 bonds are controlled to optimize electrical resistivity to reduce the possibility of surface charging of the foils. The integrated LRI and HFCVD process provides real time information on the growth of films and can quickly illustrate growth features and control film thickness. The results are discussed in the light of development of nanodiamond foils that will be able to withstand a few MW proton beam and hopefully will be able to be used after possible future upgrades to the SNS to greater than a 3MW beam.

Vispute, R D [Blue Wave Semiconductors; Ermer, Henry K [Blue Wave Semiconductors; Sinsky, Phillip [Blue Wave Semiconductors; Seiser, Andrew [Blue Wave Semiconductors; Shaw, Robert W [ORNL; Wilson, Leslie L [ORNL

2014-01-01T23:59:59.000Z

175

Defining the Proton Topology of the Zr6Based Metal-Organic Framework NU-1000  

E-Print Network [OSTI]

,16-19 heavy metal capture,20,21 sensing,12 ionic conductivity,22 toxic industrial chemical capture,23Defining the Proton Topology of the Zr6Based Metal-Organic Framework NU-1000 Nora Planas,, Joseph E of Science, King Abdulaziz University, Jeddah, Saudi Arabia *S Supporting Information ABSTRACT: Metal

176

Role of gas phase reactions in subatmospheric chemical-vapor deposition ozone/TEOS processes for oxide deposition  

E-Print Network [OSTI]

-vapor deposition. Our results for oxide deposition show optimum process window around 200 Torr for producing films a po- tentially optimum process window in which film properties, deposition rates, film uniformity requires high quality dielectric films that can be deposited rapidly and conformally on high aspect ratio

Rubloff, Gary W.

177

Vapor deposition of tantalum and tantalum compounds  

SciTech Connect (OSTI)

Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition.

Trkula, M. [Los Alamos National Lab., NM (United States). Materials Science and Technology Div.

1996-04-01T23:59:59.000Z

178

Low-pressure chemical vapor deposition of amorphous silicon photovoltaic devices. Annual technical progress report, 1 May 1984-30 April 1985  

SciTech Connect (OSTI)

Intrinsic and doped a-Si:H films were deposited by low pressure chemical vapor deposition (CVD) for disilane. Intrinsic layers were deposited at growth rates as high as 50 A/s. A chemical reaction engineering model that quantitatively describes the CVD reactor behavior has been developed. CVD intrinsic material was characterized by measurements of impurities, optical band gap, photoconductivity, activation energy, diffusion length, and density of states. Photovoltaic cells of the p-i-n type with efficiencies of 4% and 3.6% were fabricated using CVD intrinsic layers deposited at 1 A/s and 9 A/s, respectively. A maximum short-circuit current of 11 mA/cm/sup 2/ under 87.5 MW/cm/sup 2/ ELH illumination was obtained with boron-compensated CVD intrinsic material. Efficiency-limiting mechanisms in CVD cells were quantitatively analyzed and related to fundamental properties.

Baron, B.N.; Rocheleau, R.E.; Hegedus, S.S.

1986-02-01T23:59:59.000Z

179

Magnetism in metal-organic capsules  

SciTech Connect (OSTI)

Nickel and cobalt seamed metal-organic capsules have been isolated and studied using structural, magnetic and computational approaches. Antiferromagnetic exchange in the Ni capsule results from coordination environments enforced by the capsule framework.

Atwood, Jerry L.; Brechin, Euan K; Dalgarno, Scott J.; Inglis, Ross; Jones, Leigh F.; Mossine, Andrew; Paterson, Martin J.; Power, Nicholas P.; Teat, Simon J.

2010-01-07T23:59:59.000Z

180

Screening values for Non-Carcinogenic Hanford Waste Tank Vapor Chemicals that Lack Established Occupational Exposure Limits  

SciTech Connect (OSTI)

Over 1,500 different volatile chemicals have been reported in the headspaces of tanks used to store high-level radioactive waste at the U.S. Department of Energy's Hanford Site. Concern about potential exposure of tank farm workers to these chemicals has prompted efforts to evaluate their toxicity, identify chemicals that pose the greatest risk, and incorporate that information into the tank farms industrial hygiene worker protection program. Established occupation exposure limits for individual chemicals and petroleum hydrocarbon mixtures have been used elsewhere to evaluate about 900 of the chemicals. In this report headspace concentration screening values were established for the remaining 600 chemicals using available industrial hygiene and toxicological data. Screening values were intended to be more than an order of magnitude below concentrations that may cause adverse health effects in workers, assuming a 40-hour/week occupational exposure. Screening values were compared to the maximum reported headspace concentrations.

Poet, Torka S.; Mast, Terryl J.; Huckaby, James L.

2006-02-06T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


181

Metal-Organic Frameworks with Precisely Designed Interior for...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Metal-Organic Frameworks with Precisely Designed Interior for Carbon Dioxide Capture in the Presence of Water...

182

Amorphous silicon photovoltaic devices prepared by chemical and photochemical vapor deposition of higher order silanes. Technical progress report, 1 September 1984-28 February 1985  

SciTech Connect (OSTI)

This report describes the preparation of hydrogenated amorphous silicon (a-Si:H) films and photovoltaic devices by chemical vapor deposition (CVD) from higher order silanes, and the properties of such films and devices. The research is directed at exploring new, improved deposition techniques to produce a-Si:H. The improvement could stem from ease of deposition (lower cost and/or better reproducibility), from material improvement (higher efficiency and/or better stability under illumination), or from innovative materials that improve device performance. Research efforts have focused, therefore, on photo-CVD techniques; thermal CVD has been emphasized. This report summarizes the properties of the experimental thermal CVD films and the reasons for terminating the research in this area. In addition, the results for deposition by mercury-sensitized decomposition of disilane are presented. These results indicate that this technique is a very promising alternative to the glow-discharge method.

Delahoy, A.E.; Ellis, F.B. Jr.

1985-05-01T23:59:59.000Z

183

Amorphous silicon photovoltaic devices prepared by chemical and photochemical vapor deposition of higher order silanes. Annual subcontract progress report, 1 September 1984-31 August 1985  

SciTech Connect (OSTI)

This report describes the preparation of hydrogenated amorphous silicon (a-Si:H) films and photovoltaic devices by chemical vapor deposition (CVD) from higher order silanes and the properties of such films and devices. The research explored new deposition techniques that could produce a-Si:H superior to that achieved by the glow-discharge method. For example, the improvement could stem from ease of deposition (lower cost and/or better reproducibility), from material improvement (higher efficiency and/or better stability under illumination), or from innovative materials that improve device performance. Research focused on photo-CVD techniques; thermal CVD deemphasized. This report presents results for deposition by mercury-sensitized decomposition of disilane. These results indicate that this technique is a very promising alternative to the glow-discharge method.

Delahoy, A.E.; Ellis, F.B. Jr.

1985-11-01T23:59:59.000Z

184

Properties of chemical vapor deposited tungsten silicide films using reaction of WF/sub 6/ and Si/sub 2/H/sub 6/  

SciTech Connect (OSTI)

Tungsten silicide films were formed by the chemical vapor deposition method using the reaction WF/sub 6/ and Si/sub 2/H/sub 6/. The deposition rate, resistivity, composition, stress, crystal structure, and content of impurities were studied and compared with tungsten silicide films deposited by reaction of WF/sub 6/ and SiH/sub 4/. The tungsten silicide films made using Si/sub 2/H/sub 6/ have a higher deposition rate and higher Si concentration than those made by using SiH/sub 4/ at the same substrate temperature. For these reasons, the tungsten silicide films made by using Si/sub 2/H/sub 6/ were found to have a resistivity that is a little higher and, after annealing, a stress that is smaller than that made by SiH/sub 4/.

Shioya, Y.; Ikegami, K.; Kobayashi, I.; Maeda, M.

1987-05-01T23:59:59.000Z

185

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition  

SciTech Connect (OSTI)

We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

Michon, A.; Vezian, S.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Ouerghi, A. [CNRS-LPN, Route de Nozay, 91460 Marcoussis (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

2010-10-25T23:59:59.000Z

186

Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits  

SciTech Connect (OSTI)

Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 M?/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10?k?/sq (of the order of its initial value). Moreover, the maximum current density of ?1.2?×?10{sup 7?}A/cm{sup 2} has been obtained for SLG (1?×?2.5??m{sup 2}) on SiO{sub 2}/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

Prasad, Neetu, E-mail: neetu.prasad@south.du.ac.in, E-mail: neetu23686@gmail.com; Kumari, Anita; Bhatnagar, P. K.; Mathur, P. C. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Bhatia, C. S. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2014-09-15T23:59:59.000Z

187

The relationship between structural evolution and electrical percolation of the initial stages of tungsten chemical vapor deposition on polycrystalline TiN  

SciTech Connect (OSTI)

This paper presents experimental results and a geometric model of the evolution of sheet resistance and surface morphology during the transition from nucleation to percolation of tungsten chemical vapor deposition over ultrathin polycrystalline titanium nitride (TiN). We observed two mechanisms of reduction in sheet resistance. At deposition temperatures higher than 310 deg. C, percolation effect is formed at {approx}35% of surface coverage, {theta}, and characterized with a sharp drop in resistance. At temperature below 310 deg. C, a reduction in resistance occurs in two steps. The first step occurs when {theta} = 35% and the second step at {theta} = 85%. We suggest a geometric model in which the electrical percolation pass is modulated by the thickness threshold of the islands at the instant of collision.

Rozenblat, A. [Micron Semiconductors Israel Ltd., Qiryat-Gat 82109 (Israel); Department of Physical Electronics, Electrical Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Haimson, S. [Material Science Program, Tel Aviv University, Tel Aviv 69978 (Israel); Shacham-Diamand, Y. [Department of Physical Electronics, Electrical Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Horvitz, D. [Micron Semiconductors Israel Ltd., Qiryat-Gat 82109 (Israel)

2012-01-16T23:59:59.000Z

188

Copolymerization of divinylbenzene and 4-vinylpyridine using initiated chemical vapor deposition for surface modification and its applications  

E-Print Network [OSTI]

This research investigates the copolymerization of divinylbenzene and 4- vinylpyridine into organic thin films that exhibit conformal, stable, and uniform surface properties. Thin films were grown using initiated chemical ...

Martinez, Ernesto, S.B. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

189

Chemical beam epitaxy for high efficiency photovoltaic devices  

SciTech Connect (OSTI)

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes recent results on PV devices and demonstrates the strength of this new technology.

Bensaoula, A.; Freundlich, A.; Vilela, M. F.; Medelci, N.; Renaud, P.

1994-09-01T23:59:59.000Z

190

Silicon nucleation and film evolution on silicon dioxide using disilane: Rapid thermal chemical vapor deposition of very smooth silicon at high deposition rates  

SciTech Connect (OSTI)

An investigation of Si{sub 2}H{sub 6} and H{sub 2} for rapid thermal chemical vapor deposition (RTCVD) of silicon on SiO{sub 2} has been performed at temperatures ranging from 590 to 900 C and pressures ranging from 0.1 to 1.5 Torr. Deposition at 590 C yields amorphous silicon films with the corresponding ultrasmooth surface with a deposition rate of 68 nm/min. Cross-sectional transmission electron microscopy of a sample deposited at 625 C and 1 Torr reveals a bilayer structure which is amorphous at the growth surface and crystallized at the oxide interface. Higher temperatures yield polycrystalline films where the surface roughness depends strongly on both deposition pressure and temperature. Silane-based amorphous silicon deposition in conventional systems yields the expected ultrasmooth surfaces, but at greatly reduced deposition rates unsuitable for single-wafer processing. However, disilane, over the process window considered here, yields growth rates high enough to be appropriate for single-wafer manufacturing, thus providing a viable means for deposition of very smooth silicon films on SiO{sub 2} in a single-wafer environment.

Violette, K.E.; Oeztuerk, M.C.; Christensen, K.N.; Maher, D.M. [North Carolina State Univ., Raleigh, NC (United States)

1996-02-01T23:59:59.000Z

191

Raman and electron microscopic studies of Si{sub 1-x}Ge{sub x} alloy nanowires grown by chemical vapor deposition  

SciTech Connect (OSTI)

Si{sub 1-x}Ge{sub x} alloy nanowires (SiGeNWs) were grown by Au-catalyzed chemical vapor deposition and studied by Raman spectroscopy, transmission electron microscopy (TEM), and energy-dispersive x-ray spectroscopy (EDS) in TEM (TEM-EDS). The relationship between the growth parameters and the structure of the SiGeNWs was clarified by systematically changing the growth conditions over a wide range. Raman and TEM-EDS results demonstrated that the SiGeNWs consist of a lower Ge composition core and a higher Ge composition shell epitaxially grown on the surface of the core. The effects of oxidation on the structure of the SiGeNWs were studied. It was found that oxidation leads to segregation of the Ge atoms at the interface between the SiGeNWs and SiO{sub 2}, which in turn results in a large inhomogeneity in Ge composition. Oxidation at a very low rate in a diluted oxygen gas atmosphere is required to avoid the formation of Ge particles and minimize the inhomogeneity.

Kawashima, Takahiro; Imamura, Goh; Fujii, Minoru; Hayashi, Shinji; Saitoh, Tohru; Komori, Kazunori [Advanced Devices Development Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501 (Japan); Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan); Image Devices Development Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501 (Japan)

2007-12-15T23:59:59.000Z

192

Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects  

SciTech Connect (OSTI)

100-nm-thick nanocrystalline silicon (nano-Si)-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 5–6 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL) measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ? 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.

Kosemura, Daisuke, E-mail: d-kose@isc.meiji.ac.jp; Mizukami, Yuki; Takei, Munehisa; Numasawa, Yohichiroh; Ogura, Atsushi [School of Science and Technology, Meiji University, Kawasaki 214-8571 (Japan)] [School of Science and Technology, Meiji University, Kawasaki 214-8571 (Japan); Ohshita, Yoshio [Toyota Technological Institute, Nagoya 468-8511 (Japan)] [Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-01-15T23:59:59.000Z

193

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition  

SciTech Connect (OSTI)

Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6{radical}3 Multiplication-Sign 6{radical}3)-R30 Degree-Sign reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.

Michon, A.; Vezian, S.; Roudon, E.; Lefebvre, D.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France)] [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)] [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

2013-05-28T23:59:59.000Z

194

Epitaxial growth of Si1 ? xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating  

Science Journals Connector (OSTI)

Abstract By using electron-cyclotron-resonance (ECR) Ar-plasma chemical vapor deposition (CVD) without substrate heating, the epitaxial growth process of Si1 ? xGex alloy and Ge films deposited directly on dilute-HF-treated Si(100) was investigated. From the reflection high energy electron diffraction patterns of the deposited Si1 ? xGex alloy (x = 0.50, 0.75) and Ge films on Si(100), it is confirmed that epitaxial growth can be realized without substrate heating, and that crystallinity degradation at larger film thickness is observed. The X-ray diffraction peak of the epitaxial films reveals the existence of large compressive strain, which is induced by lattice matching with the Si(100) substrate at smaller film thicknesses, as well as strain relaxation behavior at larger film thicknesses. The Ge fraction of Si1 ? xGex thin film is in good agreement with the normalized GeH4 partial pressure. The Si1 ? xGex deposition rate increases with an increase of GeH4 partial pressure. The GeH4 partial pressure dependence of partial deposition rates [(Si or Ge fraction) × (Si1 ? xGex thickness) / (deposition time)] shows that the Si partial deposition rate is slightly enhanced by the existence of Ge. From these results, it is proposed that the ECR-plasma CVD process can be utilized for Ge fraction control in highly-strained heterostructure formation of group IV semiconductors.

Naofumi Ueno; Masao Sakuraba; Junichi Murota; Shigeo Sato

2014-01-01T23:59:59.000Z

195

Stepwise Synthesis of Robust Metal-Organic Frameworks via Postsyntheti...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Stepwise Synthesis of Robust Metal-Organic Frameworks via Postsynthetic Metathesis and Oxidation of Metal Nodes in a Single-Crystal to Single-Crystal Transformation Previous Next...

196

High Throughput Combinatorial Screening of Biometic Metal-Organic...  

Broader source: Energy.gov (indexed) [DOE]

Throughput Combinatorial Screening of Biometic Metal-Organic Materials for Military Hydrogen-Storage Materials (New Joint Miami UNREL DoDDLA Project) (presentation) High...

197

Photochromic Metal-Organic Frameworks: Reversible Control of...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Photochromic Metal-Organic Frameworks: Reversible Control of Singlet Oxygen Generation Previous Next List Jihye Park, Dawei Feng, Shuai Yuan and Hong-Cai Zhou, Angew. Chem. Int....

198

Hydrocarbon Separations in Metal–Organic Frameworks  

Science Journals Connector (OSTI)

Given the large differences in the physical properties of methane and C2 hydrocarbons, both size selective effects and metal–hydrocarbon interactions can be tuned to achieve a high selectivity within a metal–organic framework. ... Polycyclic aromatic hydrocarbons, or PAHs, are carcinogenic byproducts of incomplete combustion of organic matter such as fossil fuels. ... data and the heats of adsorption were found to fit well to a small group of mol. ...

Zoey R. Herm; Eric D. Bloch; Jeffrey R. Long

2013-11-22T23:59:59.000Z

199

Use of SiBN and SiBON films prepared by plasma enhanced chemical vapor deposition from borazine as interconnection dielectrics  

SciTech Connect (OSTI)

Thin films of silicon boron nitride (SiBN) of typical composition Si{sub 0.09}B{sub 0.39}N{sub 0.51} and silicon boron oxynitride (SiBON) of typical composition Si{sub 0.16}B{sub 0.29}O{sub 0.41}N{sub 0.14} were prepared by plasma enhanced chemical vapor deposition and the properties of these films were evaluated with respect to their suitability as interconnection dielectrics in microelectronic fabrication. Films were deposited on 125 mm silicon substrates in a parallel-plate reactor at a substrate temperature of 400 C and a plasma power of 0.5 W/cm{sup 2}. Boron nitride, for comparison of electrical properties, was deposited from borazine (B{sub 3}N{sub 3}H{sub 6}); silicon boron nitride was deposited from borazine, disilane (Si{sub 2}H{sub 6}), and ammonia (NH{sub 3}); silicon boron oxynitride was deposited from borazine, disilane, ammonia, and nitrous oxide (N{sub 2}O). Metal-insulator-metal capacitors were fabricated and electrical measurements indicated that all three films had excellent dielectric properties with dielectric constants of 4.1, 4.7, and 3.9 for BN, SiBN, and SiBON, respectively. Tests of conformality indicated that deposition into trenches with an aspect ratio of 4:1 gave conformality greater than 70%. Silicon boron oxynitride was shown to be an excellent barrier to the diffusion of copper. A planar, single level metal-insulator structure was constructed using a SiBN/SiBON insulator with copper metallization.

Kane, W.F.; Cohen, S.A.; Hummel, J.P.; Luther, B. [IBM Research Div., Yorktown Heights, NY (United States). T.J. Watson Research Center; Beach, D.B. [Oak Ridge National Lab., TN (United States). Chemical and Analytical Sciences Div.

1997-02-01T23:59:59.000Z

200

The Progress on Low-Cost, High-Quality, High-Temperature Superconducting Tapes Deposited by the Combustion Chemical Vapor Deposition Process  

SciTech Connect (OSTI)

The innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. Over 100 meter lengths of both Ni and Ni-W (3 at. Wt.%) substrates with a surface roughness of 12-18 nm were produced. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. Buffer layer architecture of strontium titanate (SrTiO{sub 3}) and ceria (CeO{sub 2}) have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with a J{sub c} of 1.1 MA/cm{sup 2} at 77 K and self-field. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm{sup 2}. In addition, superconducting YBCO films with an I{sub c} of 60 A/cm-width (J{sub c} = 1.5 MA/cm{sup 2}) were grown on ORNL RABiTS (CeO{sub 2}/YSZ/Y{sub 2}O{sub 3}/Ni/Ni-3W) using CCVD process.

Shoup, S.S.; White, M.K.; Krebs, S.L.; Darnell, N.; King, A.C.; Mattox, D.S.; Campbell, I.H.; Marken, K.R.; Hong, S.; Czabaj, B.; Paranthaman, M.; Christen, H.M.; Zhai, H.-Y. Specht, E.

2008-06-24T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Carbon Dioxide Capture in Metal-Organic Frameworks | Center for...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Carbon Dioxide Capture in Metal-Organic Frameworks Previous Next List Kenji Sumida , David L. Rogow , Jarad A. Mason , Thomas M. McDonald , Eric D. Bloch , Zoey R. Herm , Tae-Hyun...

202

A versatile metal-organic framework for carbon dioxide capture...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

versatile metal-organic framework for carbon dioxide capture and cooperative catalysis Previous Next List Jinhee Park, Jian-Rong Li, Ying-Pin Chen, Jiamei Yu, Andrey A. Yakovenko,...

203

Metal-Organic Frameworks as Adsorbents for Hydrogen Purification...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Metal-Organic Frameworks as Adsorbents for Hydrogen Purification and Precombustion Carbon Dioxide Capture Previous Next List Z. R. Herm, J. A. Swisher, B. Smit, R. Krishna, and J....

204

Design and synthesis of nucleobase-incorporated metal-organic...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Design and synthesis of nucleobase-incorporated metal-organic materials Previous Next List Muwei Zhang, Weigang Lu, Jian-Rong Li, Mathieu Bosch, Ying-Pin Chen, Tian-Fu Liu,...

205

Functional Mesoporous Metal-Organic Frameworks for the Capture...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Functional Mesoporous Metal-Organic Frameworks for the Capture of Heavy Metal Ions and Size-Selective Catalysis Previous Next List Qian-Rong Fang, Da-Qian Yuan, Julian Sculley,...

206

Recent advances as materials of functional metal-organic frameworks  

Science Journals Connector (OSTI)

Metal-organic frameworks (MOFs), also known as hybrid inorganic-organic materials, represent an emerging class of materials that have attracted the imagination of solid-state chemists because MOFs combine unprecedented levels of porosity with a range ...

Xiao-Lan Tong; Hai-Lu Lin; Jian-Hua Xin; Fen Liu; Min Li; Xia-Ping Zhu

2013-01-01T23:59:59.000Z

207

Metal binding in an aluminum based metal-organic framework for...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Metal binding in an aluminum based metal-organic framework for carbon dioxide capture Link to article...

208

Microporous Metal-Organic Frameworks Incorporating 1,4-Benzeneditetrazolate: Syntheses, Structures, and  

E-Print Network [OSTI]

@berkeley.edu Abstract: The potential of tetrazolate-based ligands for forming metal-organic frameworks of utility

209

Low-band-gap, amorphous-silicon-based alloys by chemical vapor deposition: Annual subcontract report, 1 October 1985-31 January 1986  

SciTech Connect (OSTI)

This research was conducted to determine the potential of photochemical vapor deposition (photo-CVD) for producing high-quality, low-band-gap amorphous silicon germanium alloys for use in high-efficiency, multijunction, thin-film photovoltaic solar cells. A photo-CVD reactor for mercury-sensitized photolysis of silane-germane and disilane-germane mixtures was developed. Alloy thin films of undoped a-Si/sub 1-x/Ge/sub x/:H were deposited using mercury vapor mixed with SiH/sub 4/ or Si/sub 2/H/sub 6/, GeH/sub 4/, and diluent gas of Ar, He, or H/sub 2/. Materials properties were characterized by measurements of Ge content, optical transmission and reflection, and dark and photo-conductivity. Opto-electronic properties of photo-CVD a-Si/sub 1-x/Ge/sub x/:H were found to be comparable to glow discharge and sputtered materials. Moreover, p-i-n solar cells with low-band-gap i-layers were able to be fabricated by photo-CVD.

Baron, B.N.; Jackson, S.C.

1986-12-01T23:59:59.000Z

210

LNG fire and vapor control system technologies  

SciTech Connect (OSTI)

This report provides a review of fire and vapor control practices used in the liquefied natural gas (LNG) industry. Specific objectives of this effort were to summarize the state-of-the-art of LNG fire and vapor control; define representative LNG facilities and their associated fire and vapor control systems; and develop an approach for a quantitative effectiveness evaluation of LNG fire and vapor control systems. In this report a brief summary of LNG physical properties is given. This is followed by a discussion of basic fire and vapor control design philosophy and detailed reviews of fire and vapor control practices. The operating characteristics and typical applications and application limitations of leak detectors, fire detectors, dikes, coatings, closed circuit television, communication systems, dry chemicals, water, high expansion foam, carbon dioxide and halogenated hydrocarbons are described. Summary descriptions of a representative LNG peakshaving facility and import terminal are included in this report together with typical fire and vapor control systems and their locations in these types of facilities. This state-of-the-art review identifies large differences in the application of fire and vapor control systems throughout the LNG industry.

Konzek, G.J.; Yasutake, K.M.; Franklin, A.L.

1982-06-01T23:59:59.000Z

211

ARM Water Vapor IOP  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ARM Water Vapor IOP The SGP CART site will host the third ARM water vapor IOP on September 18-October 8, 2000. The CART site is home to a powerful array of instruments capable of...

212

The Chemistry and Applications of Metal-Organic Frameworks  

Science Journals Connector (OSTI)

...Anson C. E. Powell A. K. , Iron(II) formate [Fe...carbon dioxide capture in an iron-based sodalite-type...IRMOF-3 with a manganese(II) acetylacetonate complex . Chem. Commun. 47...Postsynthetic modifications of iron-carboxylate nanoscale metal-organic...

Hiroyasu Furukawa; Kyle E. Cordova; Michael O’Keeffe; Omar M. Yaghi

2013-08-30T23:59:59.000Z

213

Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997  

SciTech Connect (OSTI)

This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (required annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.

Anderson, T.

1999-10-20T23:59:59.000Z

214

Hydrogen Storage in Metal-Organic Frameworks  

SciTech Connect (OSTI)

Conventional storage of large amounts of hydrogen in its molecular form is difficult and expensive because it requires employing either extremely high pressure gas or very low temperature liquid. Because of the importance of hydrogen as a fuel, the DOE has set system targets for hydrogen storage of gravimetric (5.5 wt%) and volumetric (40 g L-1) densities to be achieved by 2015. Given that these are system goals, a practical material will need to have higher capacity when the weight of the tank and associated cooling or regeneration system is considered. The size and weight of these components will vary substantially depending on whether the material operates by a chemisorption or physisorption mechanism. In the latter case, metal-organic frameworks (MOFs) have recently been identified as promising adsorbents for hydrogen storage, although little data is available for their sorption behavior. This grant was focused on the study of MOFs with these specific objectives. (1) To examine the effects of functionalization, catenation, and variation of the metal oxide and organic linkers on the low-pressure hydrogen adsorption properties of MOFs. (2) To develop a strategy for producing MOFs with high surface area and porosity to reduce the dead space and increase the hydrogen storage capacity per unit volume. (3) To functionalize MOFs by post synthetic functionalization with metals to improve the adsorption enthalpy of hydrogen for the room temperature hydrogen storage. This effort demonstrated the importance of open metal sites to improve the adsorption enthalpy by the systematic study, and this is also the origin of the new strategy, which termed isoreticular functionalization and metalation. However, a large pore volume is still a prerequisite feature. Based on our principle to design highly porous MOFs, guest-free MOFs with ultrahigh porosity have been experimentally synthesized. MOF-210, whose BET surface area is 6240 m2 g-1 (the highest among porous solids), takes up 15 wt% of total H2 uptake at 80 bar and 77 K. More importantly, the total H2 uptake by MOF-210 was 2.7 wt% at 80 bar and 298 K, which is the highest number reported for physisorptive materials.

Omar M. Yaghi

2012-04-26T23:59:59.000Z

215

THz Quantum Cascade Lasers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy  

Science Journals Connector (OSTI)

A terahertz quantum cascade laser (QCL) has been successfully grown by low-pressure MOVPE. Very high quality semiconductor interfaces are demonstrated as well as very promising lasing...

Sirigu, Lorenzo; Rudra, Alok; Amanti, Maria I; Scalari, Giacomo; Fischer, Milan; Giovannini, Marcella; Faist, Jerome; Kapon, Eli

216

Microwave Plasma Chemical Vapor Deposition of Carbon Coatings on LiNi1/3Co1/3Mn1/3O2 for Li-Ion Battery Composite Cathodes  

SciTech Connect (OSTI)

In this paper, we report results of a novel synthesis method of thin film conductive carbon coatings on LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} cathode active material powders for lithium-ion batteries. Thin layers of graphitic carbon were produced from a solid organic precursor, anthracene, by a one-step microwave plasma chemical vapor deposition (MPCVD) method. The structure and morphology of the carbon coatings were examined using SEM, TEM, and Raman spectroscopy. The composite LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} electrodes were electrochemically tested in lithium half coin cells. The composite cathodes made of the carbon-coated LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} powder showed superior electrochemical performance and increased capacity compared to standard composite LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} electrodes.

Doeff, M.M.; Kostecki, R.; Marcinek, M.; Wilcoc, J.D.

2008-12-10T23:59:59.000Z

217

Characterization of photoluminescent (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3} thin-films prepared by metallorganic chemical vapor deposition  

SciTech Connect (OSTI)

Europium doped yttrium oxide, (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3}, thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y{sub 2}O{sub 3}, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y{sub 2}O{sub 3}:Eu{sup 3+} was observed in x-ray diffraction for deposition temperatures {ge}600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra.

McKittrick, J.; Bacalski, C.F.; Hirata, G.A. [Univ. of California, San Diego, La Jolla, CA (United States); Hubbard, K.M.; Pattillo, S.G.; Salazar, K.V.; Trkula, M. [Los Alamos National Lab., NM (United States). Materials Science and Technology Div.

1998-12-01T23:59:59.000Z

218

Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating  

Science Journals Connector (OSTI)

Abstract Characteristics of B-doped Si epitaxial growth on Si(100) by using electron-cyclotron-resonance Ar plasma enhanced chemical vapor deposition without substrate heating in a SiH4–B2H6–H2–Ar gas mixture were investigated. B concentration in the deposited films increases with decreasing microwave power for plasma generation. At the microwave power of 125 W, the B concentration increases up to 5 × 1021 cm? 3. Deposition rate of the B-doped Si tends to be enhanced at the higher B2H6 partial pressure. Resistivity of the B-doped Si film tends to increase with decreasing the microwave power. Referring Irvin curve, in the case of 200 W, the carrier concentration is estimated to be at least about 1017 cm? 3 at the B concentration of 1021 cm? 3. After heat treatment in N2 atmosphere at 200 °C and 300 °C for 2 h, the resistivity drastically decreases to the value which corresponds to carrier concentration of around 1019 cm? 3. From Fourier transform infrared spectroscopy measurement, it is found that hydrogen incorporated in the as-deposited film desorbed by the heat treatment.

Yusuke Abe; Masao Sakuraba; Junichi Murota

2014-01-01T23:59:59.000Z

219

Vapor spill monitoring method  

DOE Patents [OSTI]

Method for continuous sampling of liquified natural gas effluent from a spill pipe, vaporizing the cold liquified natural gas, and feeding the vaporized gas into an infrared detector to measure the gas composition. The apparatus utilizes a probe having an inner channel for receiving samples of liquified natural gas and a surrounding water jacket through which warm water is flowed to flash vaporize the liquified natural gas.

Bianchini, Gregory M. (Livermore, CA); McRae, Thomas G. (Livermore, CA)

1985-01-01T23:59:59.000Z

220

ARM - Water Vapor  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Water Vapor Outreach Home Room News Publications Traditional Knowledge Kiosks Barrow, Alaska Tropical Western Pacific Site Tours Contacts Students Study Hall About ARM Global...

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Enabling integration of vapor-deposited polymer thin films  

E-Print Network [OSTI]

Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

Petruczok, Christy D. (Christy Danielle)

2014-01-01T23:59:59.000Z

222

Measurement and modeling of Ar ? H 2 ? C H 4 arc jet discharge chemical vapor deposition reactors II: Modeling of the spatial dependence of expanded plasma parameters and species number densities  

Science Journals Connector (OSTI)

Detailed methodology and results are presented for a two-dimensional ( r z ) computer model applicable to dc arc jet reactors operating on argon/hydrogen/hydrocarbon gas mixtures and used for chemical vapor deposition of micro- and nanocrystalline diamond and diamondlike carbon films. The model incorporates gas activation expansion into the low pressure reactor chamber and the chemistry of the neutral and charged species. It predicts the spatial variation of temperature flow velocities and number densities of 25 neutral and 14 charged species and the dependence of these parameters on the operating conditions of the reactor such as flows of H 2 and C H 4 and input power. Selected outcomes of the model are compared with experimental data in the accompanying paper [C. J. Rennick et al. J. Appl. Phys.102 063309 (2007)]. Two-dimensional spatial maps of the number densities of key radical and molecular species in the reactor derived from the model provide a summary of the complicated chemical processing that occurs. In the vortex region beyond the plume the key transformations are C H 4 ? C H 3 ? C 2 H 2 ? large hydrocarbons; in the plume or the transition zone to the cooler regions the chemical processing involves C 2 H x ? ( C H y and C H z ) C 3 H x ? ( C H y and C 2 H z ) ( C 2 H y and C 2 H z ) ? C 4 H x ? ( C H y and C 3 H z ) . Depending on the local gas temperature T g and the H ? H 2 ratio the equilibria of H-shifting reactions favor C CH and C 2 species (in the hot H-rich axial region of the plume) or C H 2 C 2 H and C 2 H 2 species (at the outer boundary of the transition zone). Deductions are drawn about the most abundant C-containing radical species incident on the growing diamond surface (C atoms and CH radicals) within this reactor and the importance of chemistry involving charged species is discussed. Modifications to the boundary conditions and model reactor geometry allow its application to a lower power arc jet reactor operated and extensively studied by Jeffries and co-workers at SRI International and comparisons are drawn with the reported laser induced fluorescence data from these studies.

Yu. A. Mankelevich; M. N. R. Ashfold; A. J. Orr-Ewing

2007-01-01T23:59:59.000Z

223

E-Print Network 3.0 - atomic vapor deposited Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Articles Surfactant-Catalyzed Chemical Vapor Deposition of Copper Thin Films Eui Seong Hwang... and demonstrated for deposition of copper thin films from ... Source:...

224

E-Print Network 3.0 - acoustic wave vapor Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(6). While previous systems have demonstrated success in chemical... striking visual identification of a range of ligating vapors (including alcohols, amines, ethers... ,...

225

Gas chromatographic-mass spectrometric characterization of an oil aerosol-vapor microbial disinfectant .  

E-Print Network [OSTI]

??"This thesis focuses on chemical characterization studies of disinfectant vapors generated from thermal oxidation of mineral oil and biogenic oil esters. The disinfection technique holds… (more)

Wadhwa, Prakash, 1980-

2005-01-01T23:59:59.000Z

226

Delivered by Ingenta to: Sung Kyun Kwan University  

E-Print Network [OSTI]

-Carbon Layer on Silicon Carbide Nanowires by a Gold Catalyst-Supported Metal-Organic Chemical Vapor Deposition of Chemistry, Sungkyunkwan University, Suwon, 440-746, Korea Silicon carbide (SiC) nano-structures would as a single molecular precur- sor through a metal-organic chemical vapor deposition (MOCVD) method

Boo, Jin-Hyo

227

Chemical vapor deposition of aluminum oxide  

DOE Patents [OSTI]

An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

Gordon, Roy (Cambridge, MA); Kramer, Keith (Cleveland, OH); Liu, Xinye (Cambridge, MA)

2000-01-01T23:59:59.000Z

228

Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis  

E-Print Network [OSTI]

spectroscopy for chemical analysis K. Horiba, Y. Nakamura, N. Nagamura, S. Toyoda, H. Kumigashira et al-level alignment at noble metal/organic interfaces Appl. Phys. Lett. 99, 183302 (2011) Note: Heated sample platform three-dimensional spatial-resolved electron spectroscopy for chemical analysis K. Horiba,1,2,3,a) Y

Miyashita, Yasushi

229

Isomerism in Metal–Organic Frameworks: “Framework Isomers”  

Science Journals Connector (OSTI)

His research interest focuses on the controlled formation, and eventual design, of metal–organic frameworks for application in gas storage for clean energy technologies. ... After that, he completed his M.Sc. in Applied Chemistry at New Mexico Highlands University where he worked on X-ray structure determination of low-melting organic materials and their complexes with mercury-organic compounds. ... This was observed upon heating Cd(abdc)bipy-1 under pressure to generate Cd(abdc)bipy-3, and exposing Cd(abdc)bipy-3 to air to reform Cd(abdc)bipy-1. ...

Trevor A. Makal; Andrey A. Yakovenko; Hong-Cai Zhou

2011-06-28T23:59:59.000Z

230

Optofluidic ring resonator sensors for rapid DNT vapor detection Greg Frye-Mason,b  

E-Print Network [OSTI]

(OFRR) chemical vapor sensor as a promising platform for explosive detection with the capability and chemical sensing platform.23­27 As illustrated in Fig. 1(A), the OFRR is a thin-walled fused silica shows that the OFRR vapor sensor is a promising platform for the development of a rapid, low

Fan, Xudong "Sherman"

231

Synthetic Design of New Metal-Organic Framework Materials for Hydrogen Storage - DOE Hydrogen and Fuel Cells Program FY 2012 Annual Progress Report  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

9 9 FY 2012 Annual Progress Report DOE Hydrogen and Fuel Cells Program Pingyun Feng (Primary Contact), Qipu Lin, Xiang Zhao Department of Chemistry University of California Riverside, CA 92521 Phone: (951) 827-2042 Email: pingyun.feng@ucr.edu DOE Program Officer: Dr. Michael Sennett Phone: (301) 903-6051 Email: Michael.Sennett@science.doe.gov Objectives Design and * synthesize new metal-organic framework materials using lightweight chemical elements to help improve gravimetric hydrogen storage capacity. Develop new synthetic strategies to generate novel * active binding sites on metal ions and ligands to enhance solid-gas interactions for increased uptake near ambient conditions.

232

Gasoline vapor recovery  

SciTech Connect (OSTI)

In a gasoline distribution network wherein gasoline is drawn from a gasoline storage tank and pumped into individual vehicles and wherein the gasoline storage tank is refilled periodically from a gasoline tanker truck, a method of recovering liquid gasoline from gasoline vapor that collects in the headspace of the gasoline storage tank as the liquid gasoline is drawn therefrom, said method comprising the steps of: (a) providing a source of inert gas; (b) introducing inert gas into the gasoline storage tank as liquid gasoline is drawn therefrom so that liquid gasoline drawn from the tank is displaced by inert gas and gasoline vapor mixes with the inert gas in the headspace of the tank; (c) collecting the inert gas/gasoline vapor mixture from the headspace of the gasoline storage tank as the tank is refilled from a gasoline tanker truck; (d) cooling the inert gas/gasoline vapor mixture to a temperature sufficient to condense the gasoline vapor in the mixture to liquid gasoline but not sufficient to liquify the inert gas in the mixture; (e) separating the condensed liquid gasoline from the inert gas; and delivering the condensed liquid gasoline to a remote location for subsequent use.

Lievens, G.; Tiberi, T.P.

1993-06-22T23:59:59.000Z

233

Symmetry-Guided Synthesis of Highly Porous Metal-Organic Frameworks...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Symmetry-Guided Synthesis of Highly Porous Metal-Organic Frameworks with Fluorite Topology Previous Next List Muwei Zhang, Ying-Pin Chen, Mathieu Bosch, Thomas Gentle III, Kecheng...

234

Cation exchange at the secondary building units of metal–organic frameworks  

E-Print Network [OSTI]

Cation exchange is an emerging synthetic route for modifying the secondary building units (SBUs) of metal–organic frameworks (MOFs). This technique has been used extensively to enhance the properties of nanocrystals and ...

Brozek, Carl Kavanaugh

235

Neutron powder diffraction of metal-organic frameworks for hydrogen storage  

Science Journals Connector (OSTI)

We review recent structural studies that we have undertaken aimed at elucidating the fundamental properties of metal-organic framework materials and their interactions with hydrogen. We have shown that exposin...

Craig M. Brown; Yun Liu; Dan A. Neumann

2008-10-01T23:59:59.000Z

236

Electrolyte vapor condenser  

DOE Patents [OSTI]

A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well. 3 figs.

Sederquist, R.A.; Szydlowski, D.F.; Sawyer, R.D.

1983-02-08T23:59:59.000Z

237

Electrolyte vapor condenser  

DOE Patents [OSTI]

A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well.

Sederquist, Richard A. (Newington, CT); Szydlowski, Donald F. (East Hartford, CT); Sawyer, Richard D. (Canton, CT)

1983-01-01T23:59:59.000Z

238

Organic vapor jet printing system  

SciTech Connect (OSTI)

An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

Forrest, Stephen R

2012-10-23T23:59:59.000Z

239

Metal-organic frameworks for Xe/Kr separation  

DOE Patents [OSTI]

Metal-organic framework (MOF) materials are provided and are selectively adsorbent to xenon (Xe) over another noble gas such as krypton (Kr) and/or argon (Ar) as a result of having framework voids (pores) sized to this end. MOF materials having pores that are capable of accommodating a Xe atom but have a small enough pore size to receive no more than one Xe atom are desired to preferentially adsorb Xe over Kr in a multi-component (Xe--Kr mixture) adsorption method. The MOF material has 20% or more, preferably 40% or more, of the total pore volume in a pore size range of 0.45-0.75 nm which can selectively adsorb Xe over Kr in a multi-component Xe--Kr mixture over a pressure range of 0.01 to 1.0 MPa.

Ryan, Patrick J.; Farha, Omar K.; Broadbelt, Linda J.; Snurr, Randall Q.; Bae, Youn-Sang

2013-08-27T23:59:59.000Z

240

Metal-organic frameworks for Xe/Kr separation  

DOE Patents [OSTI]

Metal-organic framework (MOF) materials are provided and are selectively adsorbent to xenon (Xe) over another noble gas such as krypton (Kr) and/or argon (Ar) as a result of having framework voids (pores) sized to this end. MOF materials having pores that are capable of accommodating a Xe atom but have a small enough pore size to receive no more than one Xe atom are desired to preferentially adsorb Xe over Kr in a multi-component (Xe--Kr mixture) adsorption method. The MOF material has 20% or more, preferably 40% or more, of the total pore volume in a pore size range of 0.45-0.75 nm which can selectively adsorb Xe over Kr in a multi-component Xe--Kr mixture over a pressure range of 0.01 to 1.0 MPa.

Ryan, Patrick J.; Farha, Omar K.; Broadbelt, Linda J.; Snurr, Randall Q.; Bae, Youn-Sang

2014-07-22T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Mercury Vapor | Open Energy Information  

Open Energy Info (EERE)

Mercury Vapor Mercury Vapor Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: Mercury Vapor Details Activities (23) Areas (23) Regions (0) NEPA(0) Exploration Technique Information Exploration Group: Lab Analysis Techniques Exploration Sub Group: Fluid Lab Analysis Parent Exploration Technique: Fluid Lab Analysis Information Provided by Technique Lithology: Stratigraphic/Structural: Anomalously high concentrations can indicate high permeability or conduit for fluid flow Hydrological: Field wide soil sampling can generate a geometrical approximation of fluid circulation Thermal: High concentration in soils can be indicative of active hydrothermal activity Dictionary.png Mercury Vapor: Mercury is discharged as a highly volatile vapor during hydrothermal

242

Stratified vapor generator  

DOE Patents [OSTI]

A stratified vapor generator (110) comprises a first heating section (H.sub.1) and a second heating section (H.sub.2). The first and second heating sections (H.sub.1, H.sub.2) are arranged so that the inlet of the second heating section (H.sub.2) is operatively associated with the outlet of the first heating section (H.sub.1). A moisture separator (126) having a vapor outlet (164) and a liquid outlet (144) is operatively associated with the outlet (124) of the second heating section (H.sub.2). A cooling section (C.sub.1) is operatively associated with the liquid outlet (144) of the moisture separator (126) and includes an outlet that is operatively associated with the inlet of the second heating section (H.sub.2).

Bharathan, Desikan (Lakewood, CO); Hassani, Vahab (Golden, CO)

2008-05-20T23:59:59.000Z

243

Vapor Barriers or Vapor Diffusion Retarders | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Home Air Sealing for New Home Construction Insulation Types of Insulation Insulation and Air Sealing Products and Services External Resources Find a Local AirVapor Barrier...

244

Vapor spill pipe monitor  

DOE Patents [OSTI]

The invention is a method and apparatus for continually monitoring the composition of liquefied natural gas flowing from a spill pipe during a spill test by continually removing a sample of the LNG by means of a probe, gasifying the LNG in the probe, and sending the vaporized LNG to a remote ir gas detector for analysis. The probe comprises three spaced concentric tubes surrounded by a water jacket which communicates with a flow channel defined between the inner and middle, and middle and outer tubes. The inner tube is connected to a pump for providing suction, and the probe is positioned in the LNG flow below the spill pipe with the tip oriented partly downward so that LNG is continuously drawn into the inner tube through a small orifice. The probe is made of a high thermal conductivity metal. Hot water is flowed through the water jacket and through the flow channel between the three tubes to provide the necessary heat transfer to flash vaporize the LNG passing through the inner channel of the probe. The gasified LNG is transported through a connected hose or tubing extending from the probe to a remote ir sensor which measures the gas composition.

Bianchini, G.M.; McRae, T.G.

1983-06-23T23:59:59.000Z

245

Chemical Treatment Fosters Zero Discharge by Making Cooling Water Reusable  

E-Print Network [OSTI]

mechanical methods in this category are lime-soda side stream softening and vapor compression blowdown evaporation. Another approach is chemical treatment to promote scale inhibition and dispersion....

Boffardi, B. P.

246

High-resolution terahertz atmospheric water vapor continuum measurements  

E-Print Network [OSTI]

High-resolution terahertz atmospheric water vapor continuum measurements David M. Slocum,* Thomas M such as pollution monitoring and the detection of energetic chemicals using remote sensing over long path lengths through the atmosphere. Although there has been much attention to atmospheric effects over narrow

Massachusetts at Lowell, University of

247

Vapor-liquid critical and interfacial properties of square-well fluids in slit pores  

E-Print Network [OSTI]

Jayant K. Singh,1,a and Sang Kyu Kwak2 1 Department of Chemical Engineering, Indian Institute and the shift of the vapor-liquid critical point. Nevertheless, in recent years, with the discovery of well

Singh, Jayant K.

248

Response of passive organic vapor dosimeters to a mixed gas exposure  

E-Print Network [OSTI]

of Advisory Comm1ttee: Dr. Richard B. Konzen The effects of the sampling order of two chemicals adsorbed onto a DuPont Pro-Tek Organic Vapor Dosimeters were investigated. The dosimeters were exposed to varying known concentrations of methyl methacrylate...-powered pump to draw a known volume of air through a charcoal packed tube. The charcoal adsorbs the organic vapors and separates the small amount of vapor from a large amount of air. The organic vapors are then desorbed and analyzed by means of gas...

Anderson, Scott Merritt

2012-06-07T23:59:59.000Z

249

Hydrogen Cars and Water Vapor  

E-Print Network [OSTI]

. This cycle is currently under way with hydrogen fuel cells. As fuel cell cars are suggested as a solutionHydrogen Cars and Water Vapor D.W.KEITHANDA.E.FARRELL'S POLICY FORUM "Rethinking hydrogen cars" (18 misidentified as "zero-emissions vehicles." Fuel cell vehicles emit water vapor. A global fleet could have

Colorado at Boulder, University of

250

Fuel vapor control device  

SciTech Connect (OSTI)

A fuel vapor control device is described having a valve opening and closing a passage connecting a carburetor and a charcoal canister according to a predetermined temperature. A first coil spring formed by a ''shape memory effect'' alloy is provided to urge the valve to open the passage when the temperature is high. A second coil spring urges the valve to close the passage. A solenoid is provided to urge an armature against the valve to close the passage against the force of the first coil spring when the engine is running. The solenoid heats the first coil spring to generate a spring force therein when the engine is running. When the engine is turned off, the solenoid is deactivated, and the force of the first spring overcomes the force of the second spring to open the passage until such time as the temperature of the first spring drops below the predetermined temperature.

Ota, I.; Nishimura, Y.; Nishio, S.; Yogo, K.

1987-10-20T23:59:59.000Z

251

Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy  

E-Print Network [OSTI]

Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride to examine the effects of carbon tetrachloride concentration and temperature on the morphology of carbon with increasing carbon tetrachloride concentration. Step bunching and pinning was observed at a IV/III ratio

Li, Lian

252

The Dust Settles on Water Vapor Feedback  

Science Journals Connector (OSTI)

...To understand water vapor feedback...shifts in the atmospheric circulation...caused a positive water vapor feedback...temperature. Condensation, evaporation...shifts in the atmospheric circulation...caused a positive water vapor feedback...temperature. Condensation, evaporation...

Anthony D. Del Genio

2002-04-26T23:59:59.000Z

253

Desorption efficiencies of toluene and n-butanol in an organic vapor monitor  

E-Print Network [OSTI]

&jards has become one of the most important industrial hygiene f unct i one e The levei of exposure to many organic vapor;=, is det r- mined by co' lecting the chemical on some type o solid sor- bent. Of the various adsorbents available {silica gel... two of these paramet rs) ~ The objective of this re, . earch wa, . to investigate the effe ts of chemical phase (liquid or vapor) on the desorp- tion efficiencies of toluene and n-buta?ol adsorbed on acti- vated charcoal in organic vapor monitors...

Heaney, Mary Ann

2012-06-07T23:59:59.000Z

254

Category:Mercury Vapor | Open Energy Information  

Open Energy Info (EERE)

search GEOTHERMAL ENERGYGeothermal Home Geothermalpower.jpg Looking for the Mercury Vapor page? For detailed information on Mercury Vapor as exploration techniques,...

255

Growth of manganese filled carbon nanofibers in the vapor phase  

Science Journals Connector (OSTI)

We report the vapor phase growth of partially filled graphitic fibers, 20-30 nm in diameter and up to a micron in length, during a manganese catalyzed carbon electric arc discharge. The fiber morphology resembles that of catalytic chemical vapor deposited carbon filaments but the inside hollow contains intermittent precipitates and continuous filling of Mn that at times occupy >50% of fiber lengths. Transmission electron microscopy and electron energy loss line spectra show that the fillings form as solid cores and may correspond to pure metal.

P. M. Ajayan; C. Colliex; J. M. Lambert; P. Bernier; L. Barbedette; M. Tence; O. Stephan

1994-03-14T23:59:59.000Z

256

Doctoral Defense "Carbon Dioxide Capture on Elastic Layered Metal-Organic  

E-Print Network [OSTI]

Doctoral Defense "Carbon Dioxide Capture on Elastic Layered Metal-Organic Framework Adsorbents requires drastic modifications to the current energy infrastructure. Thus, carbon capture and sequestration for use as carbon capture adsorbents. Ideal adsorbed solution theory (IAST) estimates of CO2 selectivity

Kamat, Vineet R.

257

Highly efficient separation of carbon dioxide by a metal-organic framework replete with  

E-Print Network [OSTI]

Highly efficient separation of carbon dioxide by a metal-organic framework replete with open metal capture of CO2, which is essential for natural gas purifi- cation and CO2 sequestration, has been reported media. carbon dioxide capture dynamic adsorption reticular chemistry Selective removal of CO2 from

Yaghi, Omar M.

258

Methane Storage in Metal-Organic Frameworks: Current Records, Surprise Findings, and Challenges  

E-Print Network [OSTI]

bridging fuel to a low- carbon energy future. Methane delivers roughly twice the energy of coal in terms of the amount of carbon dioxide released. In contrast to coal, methane does so without dissipating mercuryMethane Storage in Metal-Organic Frameworks: Current Records, Surprise Findings, and Challenges

259

Metal-Organic Framework Thin Films Composed of Free-Standing Acicular Nanorods Exhibiting Reversible Electrochromism  

E-Print Network [OSTI]

Reversible Electrochromism Chung-Wei Kung, Timothy Chiaan Wang, Joseph E. Mondloch, David Fairen electrochromic switching between yellow and deep blue by means of a one-electron redox reaction at its pyrene and rapid switching rate. KEYWORDS: electrochromism, metal-organic frameworks, one-dimensional nanorods

260

Theoretical Limits of Hydrogen Storage in Metal-Organic Frameworks: Opportunities and Trade-Offs  

E-Print Network [OSTI]

technologies has highlighted the need for high- density energy storage.1 In the case of fuel cell vehicles (FCVTheoretical Limits of Hydrogen Storage in Metal-Organic Frameworks: Opportunities and Trade predict the hydrogen storage properties of these compounds. Approximately 20 000 candidate compounds were

Cafarella, Michael J.

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Published on Web 12/23/2007 Matrix Isolation Chemistry in a Porous Metal-Organic Framework  

E-Print Network [OSTI]

Published on Web 12/23/2007 Matrix Isolation Chemistry in a Porous Metal-Organic Framework, during which time the colorless solid turned dark red, indicating the attachment of Cr(CO)3 units. Upon

262

Synthesis and Characterization of Films and Membranes of Metal-Organic Framework (MOF) for Gas Separation Applications  

E-Print Network [OSTI]

Metal-Organic Frameworks (MOFs) are nanoporous framework materials with tunable pore size and functionality, and hence attractive for gas separation membrane applications. Zeolitic Imidazolate Frameworks (ZIFs), a subclass of MOFs, are known...

Shah, Miral Naresh 1987-

2012-12-12T23:59:59.000Z

263

Vapor deposition of hardened niobium  

DOE Patents [OSTI]

A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

Blocher, Jr., John M. (Columbus, OH); Veigel, Neil D. (Columbus, OH); Landrigan, Richard B. (Columbus, OH)

1983-04-19T23:59:59.000Z

264

Selective Hydrogenation of Biomass Based 5-Hydroxymethylfurfural over Catalyst of Palladium Immobilized on Amine-Functionalized Metal–Organic Frameworks  

Science Journals Connector (OSTI)

Selective Hydrogenation of Biomass Based 5-Hydroxymethylfurfural over Catalyst of Palladium Immobilized on Amine-Functionalized Metal–Organic Frameworks ... A catalyst of palladium [Pd/MIL-101(Al)-NH2] supported on amine-functionalized Metal–Organic Frameworks (MOFs) allows selective hydrogenation of biomass-based 5-hydroxymethylfurfural (HMF) to 2,5-dihydroxymethyl-tetrahydrofuran (DHMTHF) with 2,5-dihydroxymethylfuran (DHMF) as an observed “intermediate”. ...

Jinzhu Chen; Ruliang Liu; Yuanyuan Guo; Limin Chen; Hui Gao

2014-12-16T23:59:59.000Z

265

Molecular Simulation of Henry's Constant at Vapor-Liquid and Liquid-Liquid Phase Richard J. Sadus  

E-Print Network [OSTI]

coexistence. 1. Introduction Henry's constant is a well-known measure of a solute's solubility in a particularMolecular Simulation of Henry's Constant at Vapor-Liquid and Liquid-Liquid Phase Boundaries Richard to determine Henry's constant from the residual chemical potential at infinite dilution at the vapor-liquid

266

The Vaporization Enthalpies and Vapor Pressures of Some Primary Amines of Pharmaceutical Importance by Correlation Gas  

E-Print Network [OSTI]

by Correlation Gas Chromatography Chase Gobble, Nigam Rath, and James Chickos* Department of Chemistry Information ABSTRACT: Vapor pressures, vaporization, and sublimation enthalpies of several pharmaceuticals and boiling temperatures when available. Sublimation enthalpies and vapor pressures are also evaluated for 1

Chickos, James S.

267

pubs.acs.org/cm Published on Web 06/25/2010 r 2010 American Chemical Society 4120 Chem. Mater. 2010, 22, 41204122  

E-Print Network [OSTI]

pubs.acs.org/cm Published on Web 06/25/2010 r 2010 American Chemical Society 4120 Chem. Mater. 2010 the solvated metal-organic framework as a dark red precipitate. X-ray powder diffraction data show the solid

268

VAPORIZATION THERMODYNAMICS OF KCl. COMBINING VAPOR PRESSURE AND GRAVIMETRIC DATA  

E-Print Network [OSTI]

.B. Department of Chemistry, Moscow State University, Moscow, 119899, Russia Bonnell D.W., Hastie J.W. National temperature chemistry situations, vapor pressures are typically less than 100 kPa. The molar volume is p = 101325 Pa). The subscript trs denotes that the changeisfor a transition, typically sublimation

Rudnyi, Evgenii B.

269

Vacuum vapor deposition gun assembly  

DOE Patents [OSTI]

A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

Zeren, Joseph D. (Boulder, CO)

1985-01-01T23:59:59.000Z

270

LNG Vaporizer Utilizing Vacuum Steam Condensing  

Science Journals Connector (OSTI)

This report concerns the field test results of a new type of peak-shaving LNG vaporizer (VSV) whose heat source is ... heat of vacuum steam to vaporize and superheat LNG within heat transfer tubes. Prior to the.....

Y. Miyata; M. Hanamure; H. Kujirai; Y. Sato…

1991-01-01T23:59:59.000Z

271

Running-Film Vaporizer for LNG  

Science Journals Connector (OSTI)

Advances in welding technology and steel fabrication techniques have permitted the development of a new concept in cryogenic vaporizers—the running-film plate vaporizer. Although similar in heat transfer philosop...

H. H. West; G. L. Puckett

1975-01-01T23:59:59.000Z

272

Vapor Retarder Classification- Building America Top Innovation  

Broader source: Energy.gov [DOE]

This Building America Innovations profile describes research in vapor retarders. Since 2006 the IRC has permitted Class III vapor retarders like latex paint (see list above) in all climate zones under certain conditions thanks to research by Building America teams.

273

Vapor phase modifiers for oxidative coupling  

DOE Patents [OSTI]

Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

Warren, Barbara K. (Charleston, WV)

1991-01-01T23:59:59.000Z

274

Vapor Pressures and Heats of Vaporization of Primary Coal Tars  

Office of Scientific and Technical Information (OSTI)

/ PC92544-18 / PC92544-18 VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS FINAL REPORT Grant Dates: August, 1992 - November, 1996 Principal Authors: Eric M. Suuberg (PI) and Vahur Oja Report Submitted: April, 1997 Revised: July, 1997 Grant Number: DE-FG22-92PC92544 Report Submitted by: ERIC M. SUUBERG DIVISION OF ENGINEERING BROWN UNIVERSITY PROVIDENCE, RI 02912 TEL. (401) 863-1420 Prepared For: U. S. DEPT. OF ENERGY FEDERAL ENERGY TECHNOLOGY CENTER P.O. BOX 10940 PITTSBURGH, PA 15236 DR. KAMALENDU DAS, FETC, MORGANTOWN , WV TECHNICAL PROJECT OFFICER "US/DOE Patent Clearance is not required prior to the publication of this document" ii United States Government Disclaimer This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any

275

VAPORIZATION OF TUNGSTEN-METAL IN STEAM AT HIGH TEMPERATURES.  

SciTech Connect (OSTI)

The vaporization of tungsten from the APT spallation target dominates the radiological source term for unmitigated target overheating accidents. Chemical reactions of tungsten with steam which persist to tungsten temperatures as low as 800 C result in the formation of a hydrated tungsten-oxide which has a high vapor pressure and is readily convected in a flowing atmosphere. This low-temperature vaporization reaction essentially removes the oxide film that forms on the tungsten-metal surface as soon as it forms, leaving behind a fresh metallic surface for continued oxidation and vaporization. Experiments were conducted to measure the oxidative vaporization rates of tungsten in steam as part of the effort to quantify the MT radiological source term for severe target accidents. Tests were conducted with tungsten rods (1/8 inch diameter, six inches long) heated to temperatures from approximately 700 C to 1350 C in flowing steam which was superheated to 140 C. A total of 19 experiments was conducted. Fifteen tests were conducted by RF induction heating of single tungsten rods held vertical in a quartz glass retort. Four tests were conducted in a vertically-mounted tube furnace for the low temperature range of the test series. The aerosol which was generated and transported downstream from the tungsten rods was collected by passing the discharged steam through a condenser. This procedure insured total collection of the steam along with the aerosol from the vaporization of the rods. The results of these experiments revealed a threshold temperature for tungsten vaporization in steam. For the two tests at the lowest temperatures which were tested, approximately 700 C, the tungsten rods were observed to oxidize without vaporization. The remainder of the tests was conducted over the temperature range of 800 C to 1350 C. In these tests, the rods were found to have lost weight due to vaporization of the tungsten and the missing weight was collected in the downstream condensate system. The aerosol formed a fine white smoke of tungsten-oxide which was visible to the eye as it condensed in the laminar boundary layer of steam which flowed along the surface of the rod. The aerosol continued to flow as a smoke tube downstream of the rod, flowing coaxially along the centerline axis of the quartz glass tube and depositing by impaction along the outside of a bend and at sudden area contractions in the piping. The vaporization rate data from the 17 experiments which exceeded the vaporization threshold temperature are shown in Figure 5 in the form of vaporization rates (g/cm{sup 2} s) vs. inverse temperature (K{sup {minus}1}). Two correlations to the present data are presented and compared to a published correlation by Kilpatrick and Lott. The differences are discussed.

GREENE,G.A.; FINFROCK,C.C.

2000-10-01T23:59:59.000Z

276

Prediction of blast damage from vapor cloud explosions  

SciTech Connect (OSTI)

The process industries handle a wide range of different materials and use them in different types of chemical reaction. Of particular concern is the prospect of damage and injury affecting the general public outside the boundary wall of the chemical plant. It is not wise to permit the construction of homes, schools or hospitals so close to chemical plants that they, and the people within, might be damaged or injured should there be an accidental explosion in the plant. The major hazard outside the plant is over-pressure, a consequence of an accidental explosion in a cloud of flammable gas or vapor (Vapor Cloud Explosion or VCE). It is the responsibility of plant management to ensure that any such accidental explosion is not so large as to endanger the public, and of the local planning authorities to ensure that homes, schools or hospitals are not sited so close to chemical plants that they may be endangered by accidental explosion. A vital tool for such authorities is a simple method of assessing the possible consequences of an accidental VCE. In this paper those methods of assessing the consequences are examined.

Phillips, H. [Phillips (H.), Buxton (United Kingdom)

1995-12-31T23:59:59.000Z

277

Means and method for vapor generation  

DOE Patents [OSTI]

A liquid, in heat transfer contact with a surface heated to a temperature well above the vaporization temperature of the liquid, will undergo a multiphase (liquid-vapor) transformation from 0% vapor to 100% vapor. During this transition, the temperature driving force or heat flux and the coefficients of heat transfer across the fluid-solid interface, and the vapor percentage influence the type of heating of the fluid--starting as "feedwater" heating where no vapors are present, progressing to "nucleate" heating where vaporization begins and some vapors are present, and concluding with "film" heating where only vapors are present. Unstable heating between nucleate and film heating can occur, accompanied by possibly large and rapid temperature shifts in the structures. This invention provides for injecting into the region of potential unstable heating and proximate the heated surface superheated vapors in sufficient quantities operable to rapidly increase the vapor percentage of the multiphase mixture by perhaps 10-30% and thereby effectively shift the multiphase mixture beyond the unstable heating region and up to the stable film heating region.

Carlson, Larry W. (Oswego, IL)

1984-01-01T23:59:59.000Z

278

Effect of residual gases in high vacuum on the energy-level alignment at noble metal/organic interfaces  

SciTech Connect (OSTI)

The energy-level alignment at metal/organic interfaces has traditionally been studied using ultraviolet photoelectron spectroscopy (UPS) in ultra-high vacuum (UHV). However, since most devices are fabricated in high vacuum (HV), these studies do not accurately reflect the interfaces in real devices. We demonstrate, using UPS measurements of samples prepared in HV and UHV and current-voltage measurements of devices prepared in HV, that the small amounts of residual gases that are adsorbed on the surface of clean Cu, Ag, and Au (i.e., the noble metals) in HV can significantly alter the energy-level alignment at metal/organic interfaces.

Helander, M. G.; Wang, Z. B.; Lu, Z. H.

2011-10-31T23:59:59.000Z

279

An 8-{mu}m quantum cascade laserproduced by the metalorganic vapour phase epitaxy method  

SciTech Connect (OSTI)

An 8-{mu}m quantum cascade laser is fabricated by the metalorganic vapour phase epitaxy method. A scheme of vertical transitions in a structure consisting of three quantum wells is used. The laser operates in a pulsed regime at temperatures up to 250 K. The threshold current density was about 3 kA cm{sup -2} and increased up to 6 kA cm{sup -2} at 250 K. The 1-{mu}s pulse power in the multimode regime was 45 mW at 77 K.

Zasavitskii, I I; Pashkeev, D A [P N Lebedev Physical Institute, Russian Academy of Sciences, Moscow (Russian Federation); Marmalyuk, Aleksandr A; Ryaboshtan, Yu L [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation); Mikaelyan, G T [OJSC Research and Manufacturing Enterprise 'Inject', Saratov (Russian Federation)

2010-02-28T23:59:59.000Z

280

Metal?organic frameworks for the storage and delivery of biologically active hydrogen sulfide  

SciTech Connect (OSTI)

Hydrogen sulfide is an extremely toxic gas that is also of great interest for biological applications when delivered in the correct amount and at the desired rate. Here we show that the highly porous metal-organic frameworks with the CPO-27 structure can bind the hydrogen sulfide relatively strongly, allowing the storage of the gas for at least several months. Delivered gas is biologically active in preliminary vasodilation studies of porcine arteries, and the structure of the hydrogen sulfide molecules inside the framework has been elucidated using a combination of powder X-ray diffraction and pair distribution function analysis.

Allan, Phoebe K.; Wheatley, Paul S.; Aldous, David; Mohideen, M. Infas; Tang, Chiu; Hriljac, Joseph A.; Megson, Ian L.; Chapman, Karena W.; De Weireld, Guy; Vaesen, Sebastian; Morris, Russell E. (St Andrews)

2012-04-02T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Noncatalytic synthesis of carbon nanotubes by chemical vapor deposition  

SciTech Connect (OSTI)

A new method is proposed to obtain uniform arrays of multiwall carbon nanotubes without catalysts. Nanotubes have been formed by carbon condensation from a hydrogen-methane gas mixture activated by a dc discharge. Structural and morphological investigations of the obtained material were performed by Raman spectroscopy, scanning and transmission electron microscopy, energy-dispersive X-ray analysis, and electron energy loss spectroscopy. It is shown that the obtained nanotubes contain no impurities that could act as catalysts. Based on these experimental data, it is concluded that the nanotube synthesis under study is noncatalytic. Possible mechanisms of this synthesis are considered.

Ismagilov, R. R., E-mail: ismagil@polly.phys.msu.ru; Shvets, P. V.; Kharin, A. Yu.; Obraztsov, A. N. [Moscow State University (Russian Federation)

2011-03-15T23:59:59.000Z

282

Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials  

E-Print Network [OSTI]

image in Figure 2.17(c) (FLIR® A320 Camera, the emissivitysame from the IR camera (FLIR® A320) and the thermal couple.thermal cameras (for example, FLIR® systems). However, the

Zhou, Qin

2011-01-01T23:59:59.000Z

283

Graphene growth with giant domains using chemical vapor deposition  

E-Print Network [OSTI]

N. Martensson, Controlling graphene corrugation on lattice-in patterned epitaxial graphene, Science, 2006, 312(5777), 92009, 4(6), 17 A. K. Geim, Graphene: Status and Prospects,

Yong, Virginia; Hahn, H. Thomas

2011-01-01T23:59:59.000Z

284

Air-gap sacrificial materials by initiated chemical vapor deposition  

E-Print Network [OSTI]

P(neopentyl methacrylate-co-ethylene glycol dimethacrylate) copolymer, abbreviated as P(npMAco-EGDA), was selected as the potential air-gap sacrificial material among possible combination of twenty monomers and four ...

Lee, Long Hua

2007-01-01T23:59:59.000Z

285

Formation of amorphous metal alloys by chemical vapor deposition  

DOE Patents [OSTI]

Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

Mullendore, A.W.

1988-03-18T23:59:59.000Z

286

Aerosol chemical vapor deposition of metal oxide films  

DOE Patents [OSTI]

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

Ott, K.C.; Kodas, T.T.

1994-01-11T23:59:59.000Z

287

Direct chemical vapor deposition of graphene on dielectric surfaces  

DOE Patents [OSTI]

A substrate is provided that has a metallic layer on a substrate surface of a substrate. A film made of a two dimensional (2-D) material, such as graphene, is deposited on a metallic surface of the metallic layer. The metallic layer is dewet and/or removed to provide the film on the substrate surface.

Zhang, Yuegang; Ismach, Ariel

2014-04-29T23:59:59.000Z

288

Solution-gated graphene transistors for chemical and biological sensing applications  

E-Print Network [OSTI]

Various fabrication processes were developed in order to make graphene-based chemical and biological sensors on different substrates. Single-layer graphene is grown by chemical vapor deposition and then transferred to ...

Mailly, Benjamin

2013-01-01T23:59:59.000Z

289

Chemical Looping | Open Energy Information  

Open Energy Info (EERE)

Looping Looping Jump to: navigation, search Contents 1 Introduction 2 Process Description 3 Benefits 4 Oxygen Carriers 5 Multimedia 6 Patents 7 References 8 External Links Introduction Chemical looping or chemical looping combustion (CLC) is a novel technology that could provide the means to convert fossil fuels to electricity and provide carbon capture without significant efficiency or cost penalties. Chemical looping combustion is very similar to oxy-fuel combustion where there is no direct contact between air and fuel.[1] Oxygen is extracted from air, then the oxygen is reacted with the hydrocarbon fuel producing an exhaust gas composed of carbon dioxide and water vapor.[2] The water vapor is condensed out of the gas resulting in near 100% carbon dioxide stream that could be sequestered in the ground.

290

Wick for metal vapor laser  

DOE Patents [OSTI]

An improved wick for a metal vapor laser is made of a refractory metal cylinder, preferably molybdenum or tungsten for a copper laser, which provides the wicking surface. Alternately, the inside surface of the ceramic laser tube can be metalized to form the wicking surface. Capillary action is enhanced by using wire screen, porous foam metal, or grooved surfaces. Graphite or carbon, in the form of chunks, strips, fibers or particles, is placed on the inside surface of the wick to reduce water, reduce metal oxides and form metal carbides.

Duncan, David B. (Livermore, CA)

1992-01-01T23:59:59.000Z

291

Non-Vapor Compression HVAC Technologies Report  

Broader source: Energy.gov [DOE]

While vapor-compression technologies have served heating, ventilation, and air-conditioning (HVAC) needs very effectively, and have been the dominant HVAC technology for close to 100 years, the conventional refrigerants used in vapor-compression equipment contribute to global climate change when released to the atmosphere. The Building Technologies Office is evaluating low-global warming potential (GWP) alternatives to vapor-compression technologies.

292

Metal-Organic Frameworks with Precisely Designed Interior for Carbon Dioxide Capture in the Presence of Water  

E-Print Network [OSTI]

Metal-Organic Frameworks with Precisely Designed Interior for Carbon Dioxide Capture preservation of the IRMOF structure. Carbon dioxide capture from combustion sources such as flue gas in power this carbon capture challenge. The preferred method for measuring the efficiency of a given material

Yaghi, Omar M.

293

Porous Metal-Organic Framework with Coordinatively Unsaturated MnII Sites:Sorption Properties for Various Gases  

E-Print Network [OSTI]

Porous Metal-Organic Framework with Coordinatively Unsaturated MnII Sites:Sorption Properties solid [Mn(NDC)]n (2), which contains coordinatively unsaturated MnII sites, reveals remarkable sorption capabilities for N2, H2, CO2, and CH4 gases and exhibits type I sorption behavior indicative of permanent

Paik Suh, Myunghyun

294

Mercury Vapor (Kooten, 1987) | Open Energy Information  

Open Energy Info (EERE)

Mercury Vapor (Kooten, 1987) Mercury Vapor (Kooten, 1987) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor (Kooten, 1987) Exploration Activity Details Location Unspecified Exploration Technique Mercury Vapor Activity Date Usefulness useful DOE-funding Unknown Notes Surface soil-mercury surveys are an inexpensive and useful exploration tool for geothermal resources. ---- Surface geochemical surveys for mercury were conducted in 16 areas in 1979-1981 by ARCO Oil and Gas Company as part of its geothermal evaluation program. Three techniques used together have proved satisfactory in evaluating surface mercury data. These are contouring, histograms and cumulative frequency plots of the data. Contouring geochemical data and constructing histograms are standard

295

Vapor phase modifiers for oxidative coupling  

DOE Patents [OSTI]

Volatilized metal compounds are described which are capable of retarding vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

Warren, B.K.

1991-12-17T23:59:59.000Z

296

Dosimeter for monitoring vapors and aerosols of organic compounds  

DOE Patents [OSTI]

A dosimeter is provided for collecting and detecting vapors and aerosols of organic compounds. The dosimeter comprises a lightweight, passive device that can be conveniently worn by a person as a badge or placed at a stationary location. The dosimeter includes a sample collector comprising a porous web treated with a chemical for inducing molecular displacement and enhancing phosphorescence. Compounds are collected onto the web by molecular diffusion. The web also serves as the sample medium for detecting the compounds by a room temperature phosphorescence technique. 7 figs.

Vo-Dinh, T.

1987-07-14T23:59:59.000Z

297

Near real time vapor detection and enhancement using aerosol adsorption  

SciTech Connect (OSTI)

A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

Novick, Vincent J.; Johnson, Stanley A.

1997-12-01T23:59:59.000Z

298

Near real time vapor detection and enhancement using aerosol adsorption  

DOE Patents [OSTI]

A vapor sample detection method is described where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample. 13 figs.

Novick, V.J.; Johnson, S.A.

1999-08-03T23:59:59.000Z

299

Near real time vapor detection and enhancement using aerosol adsorption  

DOE Patents [OSTI]

A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

Novick, Vincent J. (Downers Grove, IL); Johnson, Stanley A. (Countryside, IL)

1999-01-01T23:59:59.000Z

300

Adsorption of NaCl Vapor at Elevated Temperature on Mineral Adsorbents  

Science Journals Connector (OSTI)

All adsorbents were crunched and sieved to ?1.00–1.25 mm adsorbent granularity used in the experiments. ... NaCl vapor was adsorbed at 1123 K for 5 h by each adsorbent. ... In the presence of chemical adsorption Na+ and Cl? would selectively adsorb and Na+ and Cl? would exist with a different molecule. ...

Yili Li; Jian Li; Shuiyuan Cheng; Wenjun Liang; Yuquan Jin; Youqing Wu; Jinsheng Gao

2007-09-21T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Vapor Deposition of Ruthenium from an Amidinate Precursor Huazhi Li,a  

E-Print Network [OSTI]

Vapor Deposition of Ruthenium from an Amidinate Precursor Huazhi Li,a Damon B. Farmer,b Roy G. Gordon* ,a Youbo Lin,b Joost Vlassakb a Department of Chemistry and Chemical Biology and b School and potential applications. They can be used as electrodes for capacitors, in which their high work function

302

Program plan for the resolution of tank vapor issues  

SciTech Connect (OSTI)

Since 1987, workers at the Hanford Site waste tank farms in Richland, Washington, have reported strong odors emanating from the large, underground high-level radioactive waste storage tanks. Some of these workers have complained of symptoms (e.g., headaches, nausea) related to the odors. In 1992, the U.S. Department of Energy, which manages the Hanford Site, and Westinghouse Hanford Company determined that the vapor emissions coming from the tanks had not been adequately characterized and represented a potential health risk to workers in the immediate vicinity of the tanks. At that time, workers in certain areas of the tank farms were required to use full-face, supplied-breathing-air masks to reduce their exposure to the fugitive emissions. While use of supplied breathing air reduced the health risks associated with the fugitive emissions, it introduced other health and safety risks (e.g., reduced field of vision, air-line tripping hazards, and heat stress). In 1992, an aggressive program was established to assure proper worker protection while reducing the use of supplied breathing air. This program focuses on characterization of vapors inside the tanks and industrial hygiene monitoring in the tank farms. If chemical filtration systems for mitigation of fugitive emissions are deemed necessary, the program will also oversee their design and installation. This document presents the plans for and approach to resolving the Hanford Site high-level waste tank vapor concerns. It is sponsored by the Department of Energy Office of Environmental Restoration and Waste Management.

Osborne, J.W.; Huckaby, J.L.

1994-05-01T23:59:59.000Z

303

G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value-Added Product  

SciTech Connect (OSTI)

The G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) value-added product (VAP) computes precipitable water vapor using neural network techniques from data measured by the GVR. The GVR reports time-series measurements of brightness temperatures for four channels located at 183.3 ± 1, 3, 7, and 14 GHz.

Koontz, A; Cadeddu, M

2012-12-05T23:59:59.000Z

304

Quantitative organic vapor-particle sampler  

DOE Patents [OSTI]

A quantitative organic vapor-particle sampler for sampling semi-volatile organic gases and particulate components. A semi-volatile organic reversible gas sorbent macroreticular resin agglomerates of randomly packed microspheres with the continuous porous structure of particles ranging in size between 0.05-10 .mu.m for use in an integrated diffusion vapor-particle sampler.

Gundel, Lara (Berkeley, CA); Daisey, Joan M. (Walnut Creek, CA); Stevens, Robert K. (Cary, NC)

1998-01-01T23:59:59.000Z

305

Vapor-Particle Separation Using Microporous Metallic Membrane in Crossflow Filtration  

SciTech Connect (OSTI)

Simultaneous separation of vapor and particles in industrial processes could be a key step toward manufacturing of high-quality goods. The separation is critical for successful measurement of volatile or semi-volatile aerosol particles, which no reliable technique exists. We have developed a technique for separation of vapor and particles simultaneously using a specialty microporous metallic membrane. The separator allows the thermally denuded particles traverse straight through the membrane tube, while the vapor molecules permeate through the membrane, separate from the particles and are removed subsequently. The separation technique virtually eliminates the possibility of contamination by vapor re- condensation. We tested the prototype of the vapor-particle separator (VPS) using aerosols prepared from sodium chloride to represent non-volatile aerosols. Chemical like dioctyl phthalate was chosen to represent volatile particles. The test aerosol particles were generated by an atomizer followed by a tandem differential mobility analyser to produce a stream of monodisperse particles in the size range of 10 to 100 nm. In real world particles, we tested the VPS using diesel engine particles that is a mixture of complex chemical composition. Number concentration of the nonvolatile particles reduced as the temperature increased, but the mode diameter of the aerosol population remained unchanged. Number concentration of the volatile particles was also reduced as the temperature increased, but their mode diameters became smaller as particles shrunk in diameter. Differences in the thermal behaviour of the particles were attributed to its transition energy barrier and evaporation rate. Mass balance analysis suggests the separation of vapor and test particles was reasonably complete. Thus, we conclude the VPS could provide an effective means for quantitative characterization of aerosol volatility and separation of vapors from particles.

Cheng, Mengdawn [ORNL] [ORNL

2013-01-01T23:59:59.000Z

306

ARM - Field Campaign - Water Vapor IOP  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

govCampaignsWater Vapor IOP govCampaignsWater Vapor IOP Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Water Vapor IOP 2000.09.18 - 2000.10.08 Lead Scientist : Henry Revercomb Data Availability Yes For data sets, see below. Description Scientific hypothesis: 1. Microwave radiometer (MWR) observations of the 22 GHz water vapor line can accurately constrain the total column amount of water vapor (assuming a calibration accuracy of 0.5 degC or better, which translates into 0.35 mm PWV). 2. Continuous profiling by Raman lidar provides a stable reference for handling sampling problems and observes a fixed column directly above the site only requiring a single height- independent calibration factor. 3. Agreement between the salt-bath calibrated in-situ probes, chilled

307

Nano-chemo-mechanical sensor array platform for high-throughput chemical analysis  

Science Journals Connector (OSTI)

We have developed a 2-D multiplexed cantilever array platform for high-throughput nanomechanical chemical sensing and analysis. After coating the cantilevers with alkane thiols having different functional end groups, we have performed vapor phase chemical sensing experiments with toluene and water vapor as targets. To overcome non-uniform responses caused by fabrication and imaging issues, the chemical response of each cantilever is self-calibrated using the thermal response of each cantilever. From these experiments, we could observe chemically induced nanoscale motion of cantilevers for various humidity or vapor concentration levels, and response differentiation with different functional end groups of thiols.

Si-Hyung ”Shawn” Lim; Digvijay Raorane; Srinath Satyanarayana; Arunava Majumdar

2006-01-01T23:59:59.000Z

308

Energy balance in laser-irradiated vaporizing droplets  

Science Journals Connector (OSTI)

The interactions of vaporizing aerosols with a high energy laser beam are analyzed in the diffusive vaporization regime. This is the regime in which diffusive mass transport and...

Zardecki, Andrew; Armstrong, Robert L

1988-01-01T23:59:59.000Z

309

Ground Gravity Survey At Cove Fort Area - Vapor (Warpinski, Et...  

Open Energy Info (EERE)

Vapor (Warpinski, Et Al., 2004) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Ground Gravity Survey At Cove Fort Area - Vapor (Warpinski, Et...

310

CORRELATIONS BETWEEN VAPOR SATURATION, FLUID COMPOSITION, AND WELL DECLINE IN LARDERELLO  

SciTech Connect (OSTI)

A large body of field data from Larderello shows striking temporal correlations between decline of well flow-rate, produced gas/steam ratio, chloride concentration and produced vapor fraction. The latter is inferred from measured concentrations of non-condensible gases in samples of well fluid, using chemical phase equilibrium principles. Observed temporal changes in the vapor fractions can be interpreted in term of a ''multiple source'' model, as suggested by D'Amore and Truesdell (1979). This provides clues to the dynamics of reservoir depletion, and to the evaluation of well productivity and longevity.

D'Amore, F.; Pruess, K.

1985-01-22T23:59:59.000Z

311

New metal-organic nanomaterials synthesized by laser irradiation of organic liquids  

SciTech Connect (OSTI)

A new type of metal-organic composition consisting of clusters of nanoparticles has been synthesised by laser irradiation of metallocene/benzene solutions. The metallocene molecules in this reaction become the source of the metal. Exposure to high-energy femtosecond laser pulses dehydrogenate benzene molecules and initiate the high-temperature high-pressure conditions that results in the synthesis of new materials. Irradiation experiments have been carried out on ferrocene/benzene and on other solutions. With ferrocene the synthesis of a new compound has been confirmed by X-ray powder diffraction as the peaks detected do not correspond to any known substance in the Crystallography Open Database. Theoretical simulation of the periodic structure of this new carbide predicts that it has hexagonal symmetry and a unit cell with a = 3.2A and c =2.8A. The exact structure is still uncertain but may be determined from scanning tunneling microscope (STM) studies.

Kuzmin, Stanislav L.; Wesolowski, Michal J.; Duley, Walter W. [Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, ON N2L 3G1 (Canada)

2014-03-31T23:59:59.000Z

312

System and method for generating and/or screening potential metal-organic frameworks  

DOE Patents [OSTI]

A system and method for systematically generating potential metal-organic framework (MOFs) structures given an input library of building blocks is provided herein. One or more material properties of the potential MOFs are evaluated using computational simulations. A range of material properties (surface area, pore volume, pore size distribution, powder x-ray diffraction pattern, methane adsorption capability, and the like) can be estimated, and in doing so, illuminate unidentified structure-property relationships that may only have been recognized by taking a global view of MOF structures. In addition to identifying structure-property relationships, this systematic approach to identify the MOFs of interest is used to identify one or more MOFs that may be useful for high pressure methane storage.

Wilmer, Christopher E; Leaf, Michael; Snurr, Randall Q; Farha, Omar K; Hupp, Joseph T

2014-12-02T23:59:59.000Z

313

Enhancement of CO2/N2 selectivity in a metal-organic framework by cavity modification  

E-Print Network [OSTI]

electricity is a major source of CO2 in the atmosphere, but the capture and sequestration of CO2 from flue gas two-thirds), CO2, water vapor, oxygen, and minor components such as carbon monoxide, nitrogen oxides

314

Recovering hydrocarbons from hydrocarbon-containing vapors  

DOE Patents [OSTI]

Values are recovered from a hydrocarbon-containing vapor by contacting the vapor with quench liquid consisting essentially of hydrocarbons to form a condensate and a vapor residue, the condensate and quench fluid forming a combined liquid stream. The combined liquid stream is mixed with a viscosity-lowering liquid to form a mixed liquid having a viscosity lower than the viscosity of the combined liquid stream to permit easy handling of the combined liquid stream. The quench liquid is a cooled portion of the mixed liquid. Viscosity-lowering liquid is separated from a portion of the mixed liquid and cycled to form additional mixed liquid.

Mirza, Zia I. (La Verne, CA); Knell, Everett W. (Los Alamitos, CA); Winter, Bruce L. (Danville, CA)

1980-09-30T23:59:59.000Z

315

Chemical heat pump  

DOE Patents [OSTI]

A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to faciliate installation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

1984-01-01T23:59:59.000Z

316

Chemical heat pump  

DOE Patents [OSTI]

A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to facilitate installation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

1984-01-01T23:59:59.000Z

317

Chemical heat pump  

DOE Patents [OSTI]

A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to facilitate intallation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

1984-01-01T23:59:59.000Z

318

Chemical heat pump  

DOE Patents [OSTI]

A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to facilitate installation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

1981-01-01T23:59:59.000Z

319

APPLICATION OF STIR BAR SORPTIVE EXTRACTION TO ANALYSIS OF VOLATILE AND SEMIVOLATILE ORGANIC CHEMICALS OF POTENTIAL CONCERN IN SOLIDS AND AQUEOUS SAMPLES FROM THE HANFORD SITE  

SciTech Connect (OSTI)

Stir bar sorptive extraction was applied to aqueous and solid samples for the extraction and analysis of organic compounds from the Hanford chemicals of potential concern list, as identified in the vapor data quality objectives. The 222-S Laboratory analyzed these compounds from vapor samples on thermal desorption tubes as part of the Hanford Site industrial hygiene vapor sampling effort.

FRYE JM; KUNKEL JM

2009-03-05T23:59:59.000Z

320

A simple grand canonical approach to compute the vapor pressure of bulk and finite size systems  

SciTech Connect (OSTI)

In this article we introduce a simple grand canonical screening (GCS) approach to accurately compute vapor pressures from molecular dynamics or Monte Carlo simulations. This procedure entails a screening of chemical potentials using a conventional grand canonical scheme, and therefore it is straightforward to implement for any kind of interface. The scheme is validated against data obtained from Gibbs ensemble simulations for water and argon. Then, it is applied to obtain the vapor pressure of the coarse-grained mW water model, and it is shown that the computed value is in excellent accord with the one formally deduced using statistical thermodynamics arguments. Finally, this methodology is used to calculate the vapor pressure of a water nanodroplet of 94 molecules. Interestingly, the result is in perfect agreement with the one predicted by the Kelvin equation for a homogeneous droplet of that size.

Factorovich, Matías H.; Scherlis, Damián A. [Departamento de Química Inorgánica, Analítica y Química Física/INQUIMAE, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pab. II, Buenos Aires C1428EHA (Argentina)] [Departamento de Química Inorgánica, Analítica y Química Física/INQUIMAE, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pab. II, Buenos Aires C1428EHA (Argentina); Molinero, Valeria [Department of Chemistry, University of Utah, 315 South 1400 East, Salt Lake City, Utah 84112-0850 (United States)] [Department of Chemistry, University of Utah, 315 South 1400 East, Salt Lake City, Utah 84112-0850 (United States)

2014-02-14T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Vapor Power Systems MAE 4263 Final Exam  

E-Print Network [OSTI]

Vapor Power Systems MAE 4263 Final Exam Wednesday, May 5, 2004 Prof. P.M. Moretti Key Instructions, then think, then write! 1. What is the dewpoint of the exhaust of your car, if the gasoline consists2 so that the mole fraction of water vapor is yH2 O = 9 9 + 8 + 47 = 0:14063 pH2 O = 0:14063 14

322

Optical monitor for water vapor concentration  

DOE Patents [OSTI]

A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma. 5 figs.

Kebabian, P.

1998-06-02T23:59:59.000Z

323

Optical monitor for water vapor concentration  

DOE Patents [OSTI]

A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma.

Kebabian, Paul (Acton, MA)

1998-01-01T23:59:59.000Z

324

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and  

E-Print Network [OSTI]

InN material lattice-matched to GaN will also be useful as cladding layer in laser structure. Specifically, Al) for solid state light- ing [1­19], visible diode lasers for both display and biosensing [20GaN and AlGaN in III-nitride based applications for LEDs [40­42] and laser diode (LD) [20­26], solar

Gilchrist, James F.

325

Vapor Pressures and Vaporization, Sublimation, and Fusion Enthalpies of Some Fatty Acids  

E-Print Network [OSTI]

Vapor Pressures and Vaporization, Sublimation, and Fusion Enthalpies of Some Fatty Acids Joe A. Wilson and James S. Chickos* Department of Chemistry and Biochemistry, University of MissouriSt. Louis, St. Louis, Missouri 63121, United States *S Supporting Information ABSTRACT: Sublimation enthalpies

Chickos, James S.

326

Vapor Pressures and Vaporization Enthalpies of a Series of Dialkyl Phthalates by Correlation Gas Chromatography  

E-Print Network [OSTI]

Chromatography Chase Gobble and James Chickos* Department of Chemistry and Biochemistry University of Missouri-St. Louis, St. Louis Missouri 63121, United States Sergey P. Verevkin Department of Physical Chemistry: Experimental vapor pressures, vaporization, fusion and sublimation enthalpies of a number of dialkyl

Chickos, James S.

327

ARM - Field Campaign - Water Vapor IOP  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

govCampaignsWater Vapor IOP govCampaignsWater Vapor IOP Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Water Vapor IOP 1996.09.10 - 1996.09.30 Lead Scientist : Henry Revercomb For data sets, see below. Summary SCHEDULE This IOP will be conducted from September 10 - 30, 1996 (coincident with the Fall ARM-UAV IOP). Instruments that do not require supervision will be operated continuously during this period. Instruments that do require supervision are presently planned to be operated for 8-hour periods each day. Because it is necessary to cover as broad a range of environmental conditions as possible, the daily 8-hour period will be shifted across the diurnal cycle as deemed appropriate during the IOP (but will be maintained as a contiguous 8-hour block).

328

atmospheric water vapor | OpenEI  

Open Energy Info (EERE)

atmospheric water vapor atmospheric water vapor Dataset Summary Description (Abstract): Monthly Average Solar Resource for 2-axis tracking concentrating collectors for Mexico, Central America, and the Caribbean Islands. (Purpose): Provide information on the solar resource potential for the data domain. The insolation values represent the average solar energy available to a concentrating collector, such as a dish collector, which tracks the sun continuously. Source NREL Date Released July 31st, 2006 (8 years ago) Date Updated October 30th, 2007 (7 years ago) Keywords atmospheric water vapor Carribean Islands Central America DNI GIS Mexico NREL GEF solar SWERA UNEP Data application/zip icon Download Shapefile (zip, 247.8 KiB) text/csv icon Download Data (csv, 370.6 KiB) Quality Metrics Level of Review Some Review

329

atmoshperic water vapor | OpenEI  

Open Energy Info (EERE)

atmoshperic water vapor atmoshperic water vapor Dataset Summary Description (Abstract): Monthly Average Solar Resource for flat-plate collectors tilted at latitude for China. Source NREL Date Released April 12th, 2005 (9 years ago) Date Updated October 30th, 2007 (7 years ago) Keywords atmoshperic water vapor China GEF GIS NREL solar SWERA TILT UNEP Data application/zip icon Download Shapefile (zip, 625.6 KiB) text/csv icon Download Data (csv, 704.1 KiB) Quality Metrics Level of Review Some Review Comment Temporal and Spatial Coverage Frequency Time Period 01/01/1985 - 12/31/1991 License License Open Data Commons Public Domain Dedication and Licence (PDDL) Comment Rate this dataset Usefulness of the metadata Average vote Your vote Usefulness of the dataset Average vote Your vote Ease of access

330

Design and Synthesis of Novel Porous Metal-Organic Frameworks (MOFs) Toward High Hydrogen Storage Capacity  

SciTech Connect (OSTI)

Statement of Objectives: 1. Synthesize viable porous MOFs for high H2 storage at ambient conditions to be assessed by measuring H2 uptake. 2. Develop a better understanding of the operative interactions of the sorbed H2 with the organic and inorganic constituents of the sorbent MOF by means of inelastic neutron scattering (INS, to characterize the H2-MOF interactions) and computational studies (to interpret the data and predict novel materials suitable for high H2 uptake at moderate temperatures and relatively low pressures). 3. Synergistically combine the outcomes of objectives 1 and 2 to construct a made-to-order inexpensive MOF that is suitable for super H2 storage and meets the DOE targets - 6% H2 per weight (2kWh/kg) by 2010 and 9% H2 per weight (3kWh/kg) by 2015. The ongoing research is a collaborative experimental and computational effort focused on assessing H2 storage and interactions with pre-selected metal-organic frameworks (MOFs) and zeolite-like MOFs (ZMOFs), with the eventual goal of synthesizing made-to-order high H2 storage materials to achieve the DOE targets for mobile applications. We proposed in this funded research to increase the amount of H2 uptake, as well as tune the interactions (i.e. isosteric heats of adsorption), by targeting readily tunable MOFs:

Mohamed, Eddaoudi [USF; Zaworotko, Michael [USF; Space, Brian [USF; Eckert, Juergen [USF

2013-05-08T23:59:59.000Z

331

Vapor characterization of Tank 241-C-103  

SciTech Connect (OSTI)

The Westinghouse Hanford Company Tank Vapor Issue Resolution Program has developed, in cooperation with Northwest Instrument Systems, Inc., Oak Ridge National Laboratory, Oregon Graduate Institute of Science and Technology, Pacific Northwest Laboratory, and Sandia National Laboratory, the equipment and expertise to characterize gases and vapors in the high-level radioactive waste storage tanks at the Hanford Site in south central Washington State. This capability has been demonstrated by the characterization of the tank 241-C-103 headspace. This tank headspace is the first, and for many reasons is expected to be the most problematic, that will be characterized (Osborne 1992). Results from the most recent and comprehensive sampling event, sample job 7B, are presented for the purpose of providing scientific bases for resolution of vapor issues associated with tank 241-C-103. This report is based on the work of Clauss et al. 1994, Jenkins et al. 1994, Ligotke et al. 1994, Mahon et al. 1994, and Rasmussen and Einfeld 1994. No attempt has been made in this report to evaluate the implications of the data presented, such as the potential impact of headspace gases and vapors to tank farm workers health. That and other issues will be addressed elsewhere. Key to the resolution of worker health issues is the quantitation of compounds of toxicological concern. The Toxicology Review Panel, a panel of Pacific Northwest Laboratory experts in various areas, of toxicology, has chosen 19 previously identified compounds as being of potential toxicological concern. During sample job 7B, the sampling and analytical methodology was validated for this preliminary list of compounds of toxicological concern. Validation was performed according to guidance provided by the Tank Vapor Conference Committee, a group of analytical chemists from academic institutions and national laboratories assembled and commissioned by the Tank Vapor Issue Resolution Program.

Huckaby, J.L. [Westinghouse Hanford Co., Richland, WA (United States); Story, M.S. [Northwest Instrument Systems, Inc. Richland, WA (United States)

1994-06-01T23:59:59.000Z

332

Chemically assisted mechanical refrigeration process  

DOE Patents [OSTI]

There is provided a chemically assisted mechanical refrigeration process including the steps of: mechanically compressing a refrigerant stream which includes vaporized refrigerant; contacting the refrigerant with a solvent in a mixer at a pressure sufficient to promote substantial dissolving of the refrigerant in the solvent in the mixer to form a refrigerant-solvent solution while concurrently placing the solution in heat exchange relation with a working medium to transfer energy to the working medium, said refrigerant-solvent solution exhibiting a negative deviation from Raoult's Law; reducing the pressure over the refrigerant-solvent solution in an evaporator to allow the refrigerant to vaporize and substantially separate from the solvent while concurrently placing the evolving refrigerant-solvent solution in heat exchange relation with a working medium to remove energy from the working medium to thereby form a refrigerant stream and a solvent stream; and passing the solvent and refrigerant stream from the evaporator. 5 figs.

Vobach, A.R.

1987-11-24T23:59:59.000Z

333

Chemically assisted mechanical refrigeration process  

DOE Patents [OSTI]

There is provided a chemically assisted mechanical refrigeration process including the steps of: mechanically compressing a refrigerant stream which includes vaporized refrigerant; contacting the refrigerant with a solvent in a mixer at a pressure sufficient to promote substantial dissolving of the refrigerant in the solvent in the mixer to form a refrigerant-solvent solution while concurrently placing the solution in heat exchange relation with a working medium to transfer energy to the working medium, said refrigerant-solvent solution exhibiting a negative deviation from Raoult's Law; reducing the pressure over the refrigerant-solvent solution in an evaporator to allow the refrigerant to vaporize and substantially separate from the solvent while concurrently placing the evolving refrigerant-solvent solution in heat exchange relation with a working medium to remove energy from the working medium to thereby form a refrigerant stream and a solvent stream; and passing the solvent and refrigerant stream from the evaporator. 5 figs.

Vobach, A.R.

1987-06-23T23:59:59.000Z

334

Thermal electric vapor trap arrangement and method  

DOE Patents [OSTI]

A technique for trapping vapor within a section of a tube is disclosed herein. This technique utilizes a conventional, readily providable thermal electric device having a hot side and a cold side and means for powering the device to accomplish this. The cold side of this device is positioned sufficiently close to a predetermined section of the tube and is made sufficiently cold so that any condensable vapor passing through the predetermined tube section is condensed and trapped, preferably within the predetermined tube section itself. 4 figs.

Alger, T.

1988-03-15T23:59:59.000Z

335

Diode pumped alkali vapor fiber laser  

DOE Patents [OSTI]

A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

2006-07-26T23:59:59.000Z

336

Diode pumped alkali vapor fiber laser  

DOE Patents [OSTI]

A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

2007-10-23T23:59:59.000Z

337

Metal-organic frameworks with high capacity and selectivity for harmful gases  

Science Journals Connector (OSTI)

...sulfur dioxide, ammonia, chlorine, tetrahydrothiophene, benzene, dichloromethane, ethylene...dioxide, dichloromethane, and tetrahydrothiophene. We sample a wide range of size, acidity, vapor...001 0.036 0.092 0.190 1.76 Tetrahydrothiophene 0.001 0.007 0.090 <0.001...

David Britt; David Tranchemontagne; Omar M. Yaghi

2008-01-01T23:59:59.000Z

338

Subscriber access provided by MIT Nano Letters is published by the American Chemical Society. 1155 Sixteenth  

E-Print Network [OSTI]

(UHV) anneal- ing of single-crystal SiC (0001),13,15 UHV chemical vapor deposition (CVD) on single substrate material. Furthermore, the high cost of the single crystal substrates and the UHV conditions

339

Distribution of binding energies of a water molecule in the water liquid-vapor interface  

SciTech Connect (OSTI)

Distributions of binding energies of a water molecule in the water liquid-vapor interface are obtained on the basis of molecular simulation with the SPC/E model of water. These binding energies together with the observed interfacial density profile are used to test a minimally conditioned Gaussian quasi-chemical statistical thermodynamic theory. Binding energy distributions for water molecules in that interfacial region clearly exhibit a composite structure. A minimally conditioned Gaussian quasi-chemical model that is accurate for the free energy of bulk liquid water breaks down for water molecules in the liquid-vapor interfacial region. This breakdown is associated with the fact that this minimally conditioned Gaussian model would be inaccurate for the statistical thermodynamics of a dilute gas. Aggressive conditioning greatly improves the performance of that Gaussian quasi-chemical model. The analogy between the Gaussian quasi-chemical model and dielectric models of hydration free energies suggests that naive dielectric models without the conditioning features of quasi-chemical theory will be unreliable for these interfacial problems. Multi-Gaussian models that address the composite nature of the binding energy distributions observed in the interfacial region might provide a mechanism for correcting dielectric models for practical applications.

Chempath, Shaji [Los Alamos National Laboratory; Pratt, Lawrence R [TULANE UNIV

2008-01-01T23:59:59.000Z

340

Environmental Chemistry at Vapor/Water Interfaces  

E-Print Network [OSTI]

Environmental Chemistry at Vapor/Water Interfaces: Insights from Vibrational Sum Frequency Generation Spectroscopy Aaron M. Jubb, Wei Hua, and Heather C. Allen Department of Chemistry, The Ohio State/0505-0107$20.00 Keywords salts, lipids, atmospheric chemistry, ion binding, oxidation Abstract The chemistry that occurs

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Advancing Explosives Detection Capabilities: Vapor Detection  

ScienceCinema (OSTI)

A new, PNNL-developed method provides direct, real-time detection of trace amounts of explosives such as RDX, PETN and C-4. The method selectively ionizes a sample before passing the sample through a mass spectrometer to detect explosive vapors. The method could be used at airports to improve aviation security.

Atkinson, David

2014-07-24T23:59:59.000Z

342

Program performs vapor-liquid equilibrium calculations  

SciTech Connect (OSTI)

A program designed for the Hewlett-Packard HP-41CV or 41C calculators solves basic vapor-liquid equilibrium problems, including figuring the dewpoint, bubblepoint, and equilibrium flash. The algorithm uses W.C. Edmister's method for predicting ideal-solution K values.

Rice, V.L.

1982-06-28T23:59:59.000Z

343

Synchroton X-Ray Studies of Liquid-Vapor Interfaces  

Science Journals Connector (OSTI)

The variation of density across the liquid-vapor interface from essentially zero density far out in the vapor phase to a homogeneous density deep in the liquid phase can be determined by X-ray reflectivity mea...

J. Als-Nielsen

1988-01-01T23:59:59.000Z

344

Vapor intrusion modeling : limitations, improvements, and value of information analyses  

E-Print Network [OSTI]

Vapor intrusion is the migration of volatile organic compounds (VOCs) from a subsurface source into the indoor air of an overlying building. Vapor intrusion models, including the Johnson and Ettinger (J&E) model, can be ...

Friscia, Jessica M. (Jessica Marie)

2014-01-01T23:59:59.000Z

345

Estimating the Atmospheric Water Vapor Content from Sun Photometer Measurements  

Science Journals Connector (OSTI)

The differential absorption technique for estimating columnar water vapor values from the analysis of sunphotometric measurements with wide- and narrowband interferential filters centered near 0.94 ?m is discussed and adapted. Water vapor line ...

Artemio Plana-Fattori; Michel Legrand; Didier Tanré; Claude Devaux; Anne Vermeulen; Philippe Dubuisson

1998-08-01T23:59:59.000Z

346

OPTIMIZATION OF INJECTION INTO VAPOR-DOMINATED GEOTHERMAL  

E-Print Network [OSTI]

given by U.S. Department of Energy, Geothermal Division. #12;vii Table of Contents ABSTRACTOPTIMIZATION OF INJECTION INTO VAPOR-DOMINATED GEOTHERMAL RESERVOIRS CONSIDERING ADSORPTION governing the behavior of vapor- dominated geothermal reservoirs. These mechanisms affect both

Stanford University

347

Detection of concealed and buried chemicals by using multifrequency excitations  

SciTech Connect (OSTI)

In this paper, we present a new type of concealed and buried chemical detection system by stimulating and enhancing spectroscopic signatures with multifrequency excitations, which includes a low frequency gradient dc electric field, a high frequency microwave field, and higher frequency infrared (IR) radiations. Each excitation frequency plays a unique role. The microwave, which can penetrate into the underground and/or pass through the dielectric covers with low attenuation, could effectively transform its energy into the concealed and buried chemicals and increases its evaporation rate from the sample source. Subsequently, a gradient dc electric field, generated by a Van De Graaff generator, not only serves as a vapor accelerator for efficiently expediting the transportation process of the vapor release from the concealed and buried chemicals but also acts as a vapor concentrator for increasing the chemical concentrations in the detection area, which enables the trace level chemical detection. Finally, the stimulated and enhanced vapors on the surface are detected by the IR spectroscopic fingerprints. Our theoretical and experimental results demonstrate that more than sixfold increase in detection signal can be achieved by using this proposed technology. The proposed technology can also be used for standoff detection of concealed and buried chemicals by adding the remote IR and/or thermal spectroscopic and imaging detection systems.

Gao Yaohui; Chen, Meng-Ku; Yang, Chia-En; Chang, Yun-Ching; Yao, Jim; Cheng Jiping; Yin, Stuart [Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Hui Rongqing [Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, Kansas 66045 (United States); Ruffin, Paul; Brantley, Christina; Edwards, Eugene [US Army Aviation and Missile Research Development and Engineering Center Redstone Arsenal, Alabama 35898 (United States); Luo, Claire [General Opto Solutions, LLC State College, Pennsylvania 16803 (United States)

2010-08-15T23:59:59.000Z

348

Apparent Temperature Dependence on Localized Atmospheric Water Vapor  

E-Print Network [OSTI]

Apparent Temperature Dependence on Localized Atmospheric Water Vapor Matthew Montanaroa, Carl), hence water vapor is the primary constituent of concern. The tower generates a localized water vapor, Office B108, Aiken, SC, USA ABSTRACT The atmosphere is a critical factor in remote sensing. Radiance from

Salvaggio, Carl

349

Advanced Membrane Systems: Recovering Wasteful and Hazardous Fuel Vapors at the Gasoline Tank  

Broader source: Energy.gov [DOE]

Case study covering Compact Membrane Systems, Inc. and its membrane vapor processor that recovers fuel vapors from gasoline refueling.

350

Capture of Carbon Dioxide from Air and Flue Gas in the Alkylamine-Appended Metal-Organic Framework mmen-Mg2(dobpdc)  

E-Print Network [OSTI]

Capture of Carbon Dioxide from Air and Flue Gas in the Alkylamine- Appended Metal-Organic Framework, stationary sources like coal-fired power plants, carbon capture and sequestration (CCS) has been proposed.4 viable absorbents for carbon capture under the aforementioned conditions, and they are presently used

351

Magnetic properties of a metal-organic network Fe,,N3...2,,4,4 -bpy... Tan Yuen and C. L. Lin  

E-Print Network [OSTI]

Magnetic properties of a metal-organic network Fe,,N3...2,,4,4 -bpy... Tan Yuen and C. L. Lin of Chemistry, Rutgers University, Camden, New Jersey 08102 The results of magnetic susceptibility, isothermal magnetization, and heat capacity measurements on a newly discovered iron complex with mixed ligands Fe(N3

Li, Jing

352

WATER VAPOR IN THE PROTOPLANETARY DISK OF DG Tau  

SciTech Connect (OSTI)

Water is key in the evolution of protoplanetary disks and the formation of comets and icy/water planets. While high-excitation water lines originating in the hot inner disk have been detected in several T Tauri stars (TTSs), water vapor from the outer disk, where most water ice reservoirs are stored, was only reported in the nearby TTS TW Hya. We present spectrally resolved Herschel/HIFI observations of the young TTS DG Tau in the ortho- and para-water ground-state transitions at 557 and 1113 GHz. The lines show a narrow double-peaked profile, consistent with an origin in the outer disk, and are {approx}19-26 times brighter than in TW Hya. In contrast, CO and [C II] lines are dominated by emission from the envelope/outflow, which makes H{sub 2}O lines a unique tracer of the disk of DG Tau. Disk modeling with the thermo-chemical code ProDiMo indicates that the strong UV field, due to the young age and strong accretion of DG Tau, irradiates a disk upper layer at 10-90 AU from the star, heating it up to temperatures of 600 K and producing the observed bright water lines. The models suggest a disk mass of 0.015-0.1 M{sub Sun }, consistent with the estimated minimum mass of the solar nebula before planet formation, and a water reservoir of {approx}10{sup 2}-10{sup 3} Earth oceans in vapor and {approx}100 times larger in the form of ice. Hence, this detection supports the scenario of ocean delivery on terrestrial planets by the impact of icy bodies forming in the outer disk.

Podio, L.; Dougados, C.; Thi, W.-F.; Menard, F.; Pinte, C. [UJF-Grenoble 1/CNRS-INSU, Institut de Planetologie et d'Astrophysique de Grenoble (IPAG) UMR 5274, F-38041 Grenoble (France); Kamp, I.; Meijerink, R.; Spaans, M.; Aresu, G. [Kapteyn Astronomical Institute, University of Groningen, Landleven 12, 9747 AD Groningen (Netherlands); Codella, C. [INAF-Osservatorio Astrofisico di Arcetri, Largo E. Fermi 5, I-50125 Florence (Italy); Cabrit, S. [LERMA, UMR 8112 du CNRS, Observatoire de Paris, Ecole Normale Superieure, Universite Pierre et Marie Curie, Universite de Cergy-Pontoise, 61 Av. de l'Observatoire, F-75014 Paris (France); Nisini, B. [INAF-Osservatorio Astronomico di Roma, via di Frascati 33, I-00040 Monte Porzio Catone (Italy); Sandell, G. [SOFIA-USRA, NASA Ames Research Center, MS 232-12, Building N232, Rm. 146, P.O. Box 1, Moffett Field, CA 94035-0001 (United States); Williams, J. P. [Institute for Astronomy (IfA), University of Hawaii, 2680 Woodlawn Dr., Honolulu, HI 96822 (United States); Testi, L. [European Southern Observatory, Karl-Schwarzschild-Strasse 2, D-85748 Garching (Germany); Woitke, P. [SUPA, School of Physics and Astronomy, University of St. Andrews, KY16 9SS (United Kingdom)

2013-03-20T23:59:59.000Z

353

Precision micro drilling with copper vapor lasers  

SciTech Connect (OSTI)

The authors have developed a copper vapor laser based micro machining system using advanced beam quality control and precision wavefront tilting technologies. Micro drilling has been demonstrated through percussion drilling and trepanning using this system. With a 30 W copper vapor laser running at multi-kHz pulse repetition frequency, straight parallel holes with size varying from 500 microns to less than 25 microns and with aspect ratio up to 1:40 have been consistently drilled on a variety of metals with good quality. For precision trepanned holes, the hole-to-hole size variation is typically within 1% of its diameter. Hole entrance and exit are both well defined with dimension error less than a few microns. Materialography of sectioned holes shows little (sub-micron scale) recast layer and heat affected zone with surface roughness within 1--2 microns.

Chang, J.J.; Martinez, M.W.; Warner, B.E.; Dragon, E.P.; Huete, G.; Solarski, M.E.

1994-09-02T23:59:59.000Z

354

Copper vapor laser modular packaging assembly  

DOE Patents [OSTI]

A modularized packaging arrangement for one or more copper vapor lasers and associated equipment is disclosed herein. This arrangement includes a single housing which contains the laser or lasers and all their associated equipment except power, water and neon, and means for bringing power, water, and neon which are necessary to the operation of the lasers into the container for use by the laser or lasers and their associated equipment.

Alger, Terry W. (Tracy, CA); Ault, Earl R. (Dublin, CA); Moses, Edward I. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

355

Solubility properties of siloxane polymers for chemical sensors  

SciTech Connect (OSTI)

This paper discusses the factors governing the sorption of vapors by organic polymers. The principles have been applied in the past for designing and selecting polymers for acoustic wave sensors; however they apply equally well to sorption of vapors by polymers used on optical chemical sensors. A set of solvation parameters (a table is presented for various organic vapors) have been developed that describe the particular solubility properties of individual solute molecules; they are used in linear solvation energy relationships (LSER) that model the sorption process. LSER coefficients are tabulated for five polysiloxanes; so are individual interaction terms for each of the 5 polymers. Dispersion interactions play a major role in determining overall partition coefficients; the log L{sup 16} (gas-liquid partition coefficient of solute on hexadecane) value of vapors are important in determining overall sorption. For the detection of basic vapors such as organophosphates, a hydrogen-bond acidic polymers will be most effective at sorbing them. Currently, fiber optic sensors are being developed where the cladding serves as a sorbent layer to collect and concentrate analyte vapors, which will be detected and identified spectroscopically. These solubility models will be used to design the polymers for the cladding for particular vapors.

Grate, J.W. [Pacific Northwest Lab., Richland, WA (United States); Abraham, M.H. [University College, London (United Kingdom)

1995-05-01T23:59:59.000Z

356

Veeco Develops a Tool to Reduce Epitaxy Costs and Increase LED Brightness  

Broader source: Energy.gov [DOE]

With the help of DOE funding, Veeco is working on reducing epitaxy costs and increasing LED efficiency by developing a physical vapor deposition (PVD) tool for depositing aluminum nitride buffer layers on LED substrates. PVD, also known as "sputtering," is an alternative to metal-organic chemical vapor deposition (MOCVD). PVD is a purely physical process that involves plasma sputter bombardment rather than a chemical reaction at the surface to be coated, as in MOCVD.

357

Chemical heat pump and chemical energy storage system  

DOE Patents [OSTI]

A chemical heat pump and storage system employs sulfuric acid and water. In one form, the system includes a generator and condenser, an evaporator and absorber, aqueous acid solution storage and water storage. During a charging cycle, heat is provided to the generator from a heat source to concentrate the acid solution while heat is removed from the condenser to condense the water vapor produced in the generator. Water is then stored in the storage tank. Heat is thus stored in the form of chemical energy in the concentrated acid. The heat removed from the water vapor can be supplied to a heat load of proper temperature or can be rejected. During a discharge cycle, water in the evaporator is supplied with heat to generate water vapor, which is transmitted to the absorber where it is condensed and absorbed into the concentrated acid. Both heats of dilution and condensation of water are removed from the thus diluted acid. During the discharge cycle the system functions as a heat pump in which heat is added to the system at a low temperature and removed from the system at a high temperature. The diluted acid is stored in an acid storage tank or is routed directly to the generator for reconcentration. The generator, condenser, evaporator, and absorber all are operated under pressure conditions specified by the desired temperature levels for a given application. The storage tanks, however, can be maintained at or near ambient pressure conditions. In another form, the heat pump system is employed to provide usable heat from waste process heat by upgrading the temperature of the waste heat.

Clark, Edward C. (Woodinville, WA); Huxtable, Douglas D. (Bothell, WA)

1985-08-06T23:59:59.000Z

358

Chemical deposition methods using supercritical fluid solutions  

DOE Patents [OSTI]

A method for depositing a film of a desired material on a substrate comprises dissolving at least one reagent in a supercritical fluid comprising at least one solvent. Either the reagent is capable of reacting with or is a precursor of a compound capable of reacting with the solvent to form the desired product, or at least one additional reagent is included in the supercritical solution and is capable of reacting with or is a precursor of a compound capable of reacting with the first reagent or with a compound derived from the first reagent to form the desired material. The supercritical solution is expanded to produce a vapor or aerosol and a chemical reaction is induced in the vapor or aerosol so that a film of the desired material resulting from the chemical reaction is deposited on the substrate surface. In an alternate embodiment, the supercritical solution containing at least one reagent is expanded to produce a vapor or aerosol which is then mixed with a gas containing at least one additional reagent. A chemical reaction is induced in the resulting mixture so that a film of the desired material is deposited.

Sievers, Robert E. (Boulder, CO); Hansen, Brian N. (Boulder, CO)

1990-01-01T23:59:59.000Z

359

CHEMICAL MARKETING  

Science Journals Connector (OSTI)

CHEMICAL MARKETING ... The reason, I believe, is that the chemical industry has been blind (until very recently) to the need for paying attention to marketing. ... Its marketing needs are now like those of a mature—no longer a growing—industry. ...

1960-12-19T23:59:59.000Z

360

Energy Transfer from Quantum Dots to Metal-Organic Frameworks for Enhanced Light Harvesting  

E-Print Network [OSTI]

and photosynthesis-like ensembles for solar energy conversion. A few important studies demonstrating the promise applications of MOFs in gas storage,5 sensing,6 chemical separation,7 drug delivery,8 and so on. In addition of MOFs for conversion of solar energy to electrical or chemical energy have been reported previously.9

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Chemical Scientist Hendrik Bluhm Receives Bessel Research Award  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Chemical Scientist Hendrik Bluhm Chemical Scientist Hendrik Bluhm Receives Bessel Research Award Chemical Scientist Hendrik Bluhm Receives Bessel Research Award Print Friday, 24 May 2013 00:00 Hendrik Bluhm of the Lab's Chemical Sciences Division is the recipient of the Friedrich Wilhelm Bessel Research award, bestowed by Germany's Alexander von Humboldt Foundation. Award winners are honored for their outstanding research record and invited to spend a period of up to one year cooperating on a long-term research project with specialist colleagues at a research institution in Germany. Bluhm works on beamline 11.0.2 at the Advanced Light Source, investigating solid/vapor and liquid/vapor interfaces under realistic conditions of pressure and temperature, using photoelectron spectroscopy and scanning probe microscopy

362

ARM - Field Campaign - Fall 1997 Water Vapor IOP  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Water Vapor IOP Water Vapor IOP Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Fall 1997 Water Vapor IOP 1997.09.15 - 1997.10.05 Lead Scientist : Henry Revercomb For data sets, see below. Summary The Water Vapor IOP was conducted as a follow-up to a predecessor IOP on water vapor held in September 1996. This IOP relied heavily on both ground-based guest and CART instrumentation and in-situ aircraft and tethered sonde/kite measurements. Primary operational hours were from 6 p.m. Central until at least midnight, with aircraft support normally from about 9 p.m. until midnight when available. However, many daytime measurements were made to support this IOP. The first Water Vapor IOP primarily concentrated on the atmosphere's lowest

363

G-Band Vapor Radiometer Profiler (GVRP) Handbook  

SciTech Connect (OSTI)

The G-Band Vapor Radiometer Profiler (GVRP) provides time-series measurements of brightness temperatures from 15 channels between 170 and 183.310 GHz. Atmospheric emission in this spectral region is primarily due to water vapor, with some influence from liquid water. Channels between 170.0 and 176.0 GHz are particularly sensitive to the presence of liquid water. The sensitivity to water vapor of the 183.31-GHz line is approximately 30 times higher than at the frequencies of the two-channel microwave radiometer (MWR) for a precipitable water vapor (PWV) amount of less than 2.5 mm. Measurements from the GVRP instrument are therefore especially useful during low-humidity conditions (PWV < 5 mm). In addition to integrated water vapor and liquid water, the GVRP can provide low-resolution vertical profiles of water vapor in very dry conditions.

Caddeau, MP

2010-06-23T23:59:59.000Z

364

Vapor port and groundwater sampling well  

DOE Patents [OSTI]

A method and apparatus has been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing.

Hubbell, Joel M. (Idaho Falls, ID); Wylie, Allan H. (Idaho Falls, ID)

1996-01-01T23:59:59.000Z

365

Storing images in warm atomic vapor  

E-Print Network [OSTI]

Reversible and coherent storage of light in atomic medium is a key-stone of future quantum information applications. In this work, arbitrary two-dimensional images are slowed and stored in warm atomic vapor for up to 30 $\\mu$s, utilizing electromagnetically induced transparency. Both the intensity and the phase patterns of the optical field are maintained. The main limitation on the storage resolution and duration is found to be the diffusion of atoms. A techniqueanalogous to phase-shift lithography is employed to diminish the effect of diffusion on the visibility of the reconstructed image.

M. Shuker; O. Firstenberg; R. Pugatch; A. Ron; N. Davidson

2008-06-17T23:59:59.000Z

366

Recovery of benzene in an organic vapor monitor  

E-Print Network [OSTI]

solid adsorbents available (silica gel, activated alumina, etc. ), activated charcoal is most frequently utilized. Activated charcoal has retentivity for sorbed vapors several times that of silica gel and it displays a selectivity for organic vapors... (diffusion rate) of the vapor molecules to the sur- face of the adsorbent. The adsorption process determine how effective the adsorbent collects and holds the contam- inant on the surface of the activated charcoal. Recovery of the contaminant from...

Krenek, Gregory Joel

2012-06-07T23:59:59.000Z

367

Chemical Kinetics for Modeling Silicon Epitaxy from Chlorosilanes  

SciTech Connect (OSTI)

A reaction mechanism has been developed that describes the gas-phas 0971 and surface reactions involved in the chemical vapor deposition of Si from chlorosilanes. Good agreement with deposition rate data from a single wafer reactor with no wafer rotation has been attained over a range of gas mixtures, total flow rates, and reactor temperatures.

Balakrishna, A.; Chacin, J.M.; Comita, P.B.; Haas, B.; Ho, P.; Thilderkvist, A.

1998-11-24T23:59:59.000Z

368

Mercury Vapor At Haleakala Volcano Area (Thomas, 1986) | Open Energy  

Open Energy Info (EERE)

Mercury Vapor At Haleakala Volcano Area (Thomas, 1986) Mercury Vapor At Haleakala Volcano Area (Thomas, 1986) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Haleakala Volcano Area (Thomas, 1986) Exploration Activity Details Location Haleakala Volcano Area Exploration Technique Mercury Vapor Activity Date Usefulness not indicated DOE-funding Unknown Notes The field survey program on the northwest rift zone consisted of soil mercury and radon emanometry surveys, groundwater temperature and chemistry studies, Schlumberger resistivity soundings and self-potential profiles. Geophysical and geochemical surveys along this rift (southwest) were limited by difficult field conditions and access limitations. The geophysical program consisted of one Schlumberger sounding, one

369

Mercury Vapor At Vale Hot Springs Area (Varekamp & Buseck, 1983...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Vale Hot Springs Area (Varekamp & Buseck, 1983) Exploration Activity Details...

370

Mercury Vapor At Breitenbush Hot Springs Area (Varekamp & Buseck...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Breitenbush Hot Springs Area (Varekamp & Buseck, 1983) Exploration Activity...

371

Mercury Vapor At Mickey Hot Springs Area (Varekamp & Buseck,...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Mickey Hot Springs Area (Varekamp & Buseck, 1983) Exploration Activity...

372

Mercury Vapor At Desert Peak Area (Varekamp & Buseck, 1983) ...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Desert Peak Area (Varekamp & Buseck, 1983) Exploration Activity Details...

373

Mercury Vapor At Socorro Mountain Area (Kooten, 1987) | Open...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Socorro Mountain Area (Kooten, 1987) Exploration Activity Details Location...

374

Mercury Vapor At Lassen Volcanic National Park Area (Varekamp...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Lassen Volcanic National Park Area (Varekamp & Buseck, 1983) Exploration...

375

Thermal Performance of a Double-Tube Type Lng Vaporizer  

Science Journals Connector (OSTI)

This report concerns the confirmed test results and method of analysis of the thermal performance of a double-tube type LNG vaporizer (DTV). The DTV is a...

Y. Miyata; T. Miura; S. Kasahara; H. Shohtani…

1994-01-01T23:59:59.000Z

376

Optimal Control of Vapor Extraction of Heavy Oil.  

E-Print Network [OSTI]

??Vapor extraction (Vapex) process is an emerging technology for viscous oil recovery that has gained much attention in the oil industry. However, the oil production… (more)

Muhamad, Hameed (Author)

2012-01-01T23:59:59.000Z

377

Geographic Information System At Cove Fort Area - Vapor (Nash...  

Open Energy Info (EERE)

navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Geographic Information System At Cove Fort Area - Vapor (Nash, Et Al., 2002) Exploration Activity Details...

378

Raman Lidar Measurements of Aerosols and Water Vapor During the...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

modifications reduced but could not eliminate these adverse effects. The Raman lidar water vapor (aerosol extinction) measurements produced by these modified algorithms were,...

379

Thermal Gradient Holes At Cove Fort Area - Vapor (Warpinski,...  

Open Energy Info (EERE)

Warpinski, Et Al., 2004) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Thermal Gradient Holes At Cove Fort Area - Vapor (Warpinski, Et Al.,...

380

Ground Magnetics At Cove Fort Area - Vapor (Warpinski, Et Al...  

Open Energy Info (EERE)

Vapor (Warpinski, Et Al., 2004) Exploration Activity Details Location Cove Fort Geothermal Area Exploration Technique Ground Magnetics Activity Date Usefulness useful DOE-funding...

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Spray structures and vaporizing characteristics of a GDI fuel spray  

Science Journals Connector (OSTI)

The spray structures and distribution characteristics of liquid and vapor phases in non-evaporating and evaporating Gasoline Direct Injection (GDI) fuel sprays were investigated using Laser Induced...

Dong-Seok Choi; Gyung-Min Choi; Duck-Jool Kim

2002-07-01T23:59:59.000Z

382

A description of the vapor phase in the lithium thionyl chloride battery  

E-Print Network [OSTI]

A DESCRIPTION OF TIIE YAPOP, PHASE IN THF. LITHIUM THIONYI. CHLORIDE BATTERY A Thesis by RODOLFO MORALES, JR. Submitted to the Graduate College of Texas AEzM University in partial fulfrHment of the requirement for the degree oi' MASTER... OF SCIENCE August 1988 Major Subject: Chemical Engineering A DESCRIPTION OF THE VAPOR PHASE IN THE LITHIUM THIONYL CHLORIDE BATTERY A Thesis bv RODOLFO 'vIORALES, JR. Approved as to style and content by: Ralph E. White (Chairman of Committee) James...

Morales, Rodolfo

1988-01-01T23:59:59.000Z

383

Data Quality Issues Associated with the Presence of Chlorinated Hydrocarbons in Tank Vapor Samples  

SciTech Connect (OSTI)

Characterization data for the gases and vapors in the Hanford Site high-level radioactive waste tank headspaces are compiled and available via the TWINS interface (TWINS 2006). A recent re-examination of selected data from TWINS has shown a number of anomalies with respect to compounds that are (1) not expected to be present in the tank based on operational knowledge and (2) not found consistently in the same tank by alternative analysis methods or repeat sampling. Numerous results for two chemicals in particular, cis- and trans-1,2-dichloropropane, are determined here to be suspect based on evidence that they were laboratory contaminants.

Evans, John C.; Huckaby, James L.

2006-02-13T23:59:59.000Z

384

Anomalous nonlinear photoresponse in a InGaNGaN heterostructure J. Zeller,* W. Rudolph, and M. Sheik-Bahae  

E-Print Network [OSTI]

and nonlinear carrier transport phenomena. The same model also explains the observed subpicosecond. Design guidelines for GaN-based nonlinear photodetectors used in autocorrelation measurements ) and 5.5 m silicon doped n-GaN (nSi 1017 cm 3 ). This structure was grown by metal-organic chemical vapor

Sheik-Bahae, Mansoor

385

Effects of Mg composition on open circuit voltage of Cu2OMgxZn1xO heterojunction solar cells  

E-Print Network [OSTI]

(ZnO) Cuprous oxide (Cu2O) Solar cells Electrodeposition MOCVD (metal-organic chemical vapor solar cells, where Ag and FTO are used as top and bottom electrodes, respectively. An enhancement on the MgxZn1�xO (x¼10%) based solar cell. & 2011 Elsevier B.V. All rights reserved. 1. Introduction Zn

Garfunkel, Eric

386

Home About UsContributeBookstore Advertising Subscribe for Free NOW!  

E-Print Network [OSTI]

.05As for the solar cells. The MESFET device membranes were transferred to glass substrates coated://www.semiconductor-today.com/news_items/2010/MAY/UOI_190510.htm #12;News 19 May 2010 Multi-story production of optoelectronics from Ga gallium arsenide (AlGaAs) layers on GaAs substrates using metal-organic chemical vapor deposition (MOCVD

Rogers, John A.

387

Solid State Communications 143 (2007) 437441 www.elsevier.com/locate/ssc  

E-Print Network [OSTI]

for nanoscopic research and various applications including gas sensors [5], solar cells [6], optical waveguide deposition, metalorganic chemical vapor deposition and sputtering, solution-liquid­solid growth in organic and modeling impurity distribution in the end product -- nanorods and mesoporous films [8]. Resonant Raman

Chow, Lee

388

Journal of Electronic Materials, Vol. 19, No, 4, 1990 Carbon Tetrachloride Doped AIxGa_xAS  

E-Print Network [OSTI]

Journal of Electronic Materials, Vol. 19, No, 4, 1990 Carbon Tetrachloride Doped AIx been shown to be a suitable carbon doping source for obtaining p-type GaAs grown by metalorganic chemical vapor deposition (MOCVD) with carbon acceptor concentrations in excess of 1 x 1019cm-3

Cunningham, Brian

389

Determining the exchange parameters of spin-1 metal-organic molecular magnets in pulsed magnetic fields  

SciTech Connect (OSTI)

We nave measured the high-field magnetization of a number of Ni-based metal-organic molecular magnets. These materials are self-assembly coordination polymers formed from transition metal ions and organic ligands. The chemistry of the compounds is versatile allowing many structures with different magnetic properties to be formed. These studies follow on from previous measurements of the Cu-based analogues in which we showed it was possible to extract the exchange parameters of low-dimensional magnets using pulsed magnetic fields. In our recent experiments we have investigated the compound (Ni(HF{sub 2})(pyz){sub 2})PF{sub 6}, where pyz = pyrazine, and the Ni-ions are linked in a quasi-two-dimensional (Q2D) square lattice via the pyrazine molecules, with the layers held together by HF{sub 2} ligands. We also investigated Ni(NCS){sub 2}(pyzdo){sub 2}, where pyzdo = pyrazine dioxide. The samples are grown at Eastern Washington University using techniques described elsewhere. Measurements are performed at the pulsed magnetic field laboratory in Los Alamos. The magnetization of powdered samples is determined using a compensated coil magnetometer in a 65 T short pulse magnet. Temperatures as low as 500 mK are achievable using a {sup 3}He cryostat. The main figure shows the magnetization of the spin-1 [Ni(HF{sub 2})(pyz){sub 2}]PF{sub 6} compound at 1.43 K. The magnetization rises slowly at first, achieving a rounded saturation whose midpoint is around 19 T. A small anomaly is also seen in the susceptibility at low fields ({approx}3 T), which might be attributed to a spin-flop transition. In contrast, the spin-1/2 [Cu(HF{sub 2})(pyz){sub 2}]PF{sub 6} measured previously has a saturation magnetization of 35.5 T and a strongly concave form of M(B) below this field. This latter compound was shown to be a good example of a Q2D Heisenberg antiferromagnet with the strong exchange coupling (J{sub 2D} = 12.4 K, J{sub {perpendicular}}/J{sub 2D} {approx} 10{sup -2}) directed along the Cu-pyz-Cu directions. The structure of the two compounds is similar, but in the case of the Cu-compound the Cu-Cu pathways are linear, whereas in the Ni-compound they are kinked. The pulsed-field data combined with information from temperature-dependent susceptibility, muon-spin rotation, electron-spin resonance and ligand-field calculations suggest that, far from being magnetically Q2D, the Ni-compound is fairly one-dimensional with the dominant exchange (J{sub 1D} = 3.1 K and J{sub {perpendicular}}/J{sub 1D} = 0.63) directed along the Ni-FHF-Ni direction. Ni(NCS){sub 2}(pyzdo){sub 2} was also investigated. Previous ultra-high field measurements using the 100 T magnet have shown that this compound has a saturation field close to 80 T. The purpose of the present studies is to map out the phase diagram of this material at mid-range fields. The data are shown in the inset to the figure. This continuing project probes the ability of organic ligands to mediate magnetic exchange, the link between structure, dimensionality and bulk magnetic properties, as well as the role of spin number in quantum magnets. Ultimately the investigations aim to determine to what extent it is possible to produce self-assembly molecular materials with tailor-made magnetic characteristics.

Mcdonald, Ross D [Los Alamos National Laboratory; Singleton, John [Los Alamos National Laboratory; Lancaster, Tom [OXFORD UNIV.; Goddard, Paul [OXFORD UNIV.; Manson, Jamie [EASTERN WASHINGTON UNIV.

2011-01-14T23:59:59.000Z

390

Integration of Global Positioning System and Scanning Water Vapor Radiometers for Precipitable Water Vapor and Cloud Liquid Path Estimates  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Integration of Global Positioning System and Scanning Integration of Global Positioning System and Scanning Water Vapor Radiometers for Precipitable Water Vapor and Cloud Liquid Path Estimates V. Mattioli and P. Basili Department of Electronic and Information Engineering University of Perugia Perugia, Italy E. R. Westwater Cooperative Institute for Research in Environmental Sciences University of Colorado National Oceanic and Atmospheric Administration Environmental Technology Laboratory Boulder, Colorado Introduction In recent years the Global Positioning System (GPS) has proved to be a reliable instrument for measuring precipitable water vapor (PWV) (Bevis et al. 1992), offering an independent source of information on water vapor when compared with microwave radiometers (MWRs), and/or radiosonde

391

Vapor and gas sampling of Single-Shell Tank 241-T-111 using the vapor sampling system  

SciTech Connect (OSTI)

This document presents sampling data resulting from the January 20, 1995, sampling of SST 241-T-111 using the vapor sampling system.

Caprio, G.S.

1995-09-01T23:59:59.000Z

392

Vapor and gas sampling of single-shell tank 241-BY-112 using the vapor sampling system  

SciTech Connect (OSTI)

This document presents sampling data from the November 18, 1994, sampling of SST 241-BY-112 using the vapor sampling system.

Caprio, G.S.

1995-09-20T23:59:59.000Z

393

Environmentally focused patterning and processing of polymer thin films by initiated chemical vapor deposition (iCVD) and oxidative chemical vapor deposition (oCVD)  

E-Print Network [OSTI]

The new millennium has brought fourth many technological innovations made possible by the advancement of high speed integrated circuits. The materials and energy requirements for a microchip is orders of magnitude higher ...

Trujillo, Nathan J. (Nathan Jeffrey)

2010-01-01T23:59:59.000Z

394

Informal Report . VAPOR DETECTION OF TRAFFICKING OF CONTRABAND MONEY-  

E-Print Network [OSTI]

I BNL- 62834 Informal Report . VAPOR DETECTION OF TRAFFICKING OF CONTRABAND MONEY-· [D VAPOR DETECTION OF TRAFFICKING OF CONTRABAND MONEY- A DISCUSSION OF TECHNICAL FEASIBILITY Concept MONEY --A DISCUSSION OF TECHNICAL FEASffiILITY Russell N. Dietz, Head Tracer Technology Center

395

RESONANT FARADAY ROTATION IN A HOT LITHIUM VAPOR  

E-Print Network [OSTI]

RESONANT FARADAY ROTATION IN A HOT LITHIUM VAPOR By SCOTT RUSSELL WAITUKAITIS A Thesis Submitted: #12;Abstract I describe a study of Faraday rotation in a hot lithium vapor. I begin by dis- cussing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 The Lithium Oven and Solenoid . . . . . . . . . . . . . . . . . 7 3 Theoretical Framework

Cronin, Alex D.

396

FLAMMABILITY CHARACTERISTICS OF COMBUSTIBLE GASES AND VAPORS  

Office of Scientific and Technical Information (OSTI)

Bulletin 627 Bulletin 627 BUREAU o b MINES FLAMMABILITY CHARACTERISTICS OF COMBUSTIBLE GASES AND VAPORS By Michael G. Zabetakis DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency Thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement,

397

New Regenerative Cycle for Vapor Compression Refrigeration  

Office of Scientific and Technical Information (OSTI)

SCIENTIFIC REPORT SCIENTIFIC REPORT Title Page Project Title: New Regenerative Cycle for Vapor Compression Refrigeration DOE Award Number: DE-FG36-04GO14327 Document Title: Final Scientific Report Period Covered by Report: September 30, 2004 to September 30, 2005 Name and Address of Recipient Organization: Magnetic Development, Inc., 68 Winterhill Road, Madison, CT 06443, phone: 203-214-7247, fax: 203-421-7948, e-mail: mjb1000@aol.com Contact Information: Mark J. Bergander, Ph.D., P.E., Principal Investigator, phone: 203-214-7247, fax: 203-421-7948, e-mail: mjb1000@aol.com Project Objective (as stated in the proposal): The main objective of this project is to confirm on a well-instrumented prototype the theoretically derived claims of higher efficiency and coefficient

398

Kinetics of wet sodium vapor complex plasma  

SciTech Connect (OSTI)

In this paper, we have investigated the kinetics of wet (partially condensed) Sodium vapor, which comprises of electrons, ions, neutral atoms, and Sodium droplets (i) in thermal equilibrium and (ii) when irradiated by light. The formulation includes the balance of charge over the droplets, number balance of the plasma constituents, and energy balance of the electrons. In order to evaluate the droplet charge, a phenomenon for de-charging of the droplets, viz., evaporation of positive Sodium ions from the surface has been considered in addition to electron emission and electron/ion accretion. The analysis has been utilized to evaluate the steady state parameters of such complex plasmas (i) in thermal equilibrium and (ii) when irradiated; the results have been graphically illustrated. As a significant outcome irradiated, Sodium droplets are seen to acquire large positive potential, with consequent enhancement in the electron density.

Mishra, S. K., E-mail: nishfeb@rediffmail.com [Institute for Plasma Research (IPR), Gandhinagar 382428 (India); Sodha, M. S. [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)] [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)

2014-04-15T23:59:59.000Z

399

Photo-Electric Ionization of Caesium Vapor  

Science Journals Connector (OSTI)

Measurement of photo-electric ionization in gases.—The current from a filament, normally limited by space change, is increased by the presence of positive ions. As shown by Kingdon this effect may be greatly magnified if a small cathode is practically enclosed by the anode so that the ions are imprisoned. This method was used for the detection of photo-electric ionization. Besides possessing extreme sensitivity it is unaffected by photo-electric emission from the electrodes.Photo-electric effect in caesium vapor.—The change in thermionic current with the unresolved radiation from a mercury arc was measured as functions of the applied voltage, filament temperature, and vapor pressure. Then the photo-electric effect as a function of wave-length was studied using a monochromatic illuminator to disperse light from the arc or a Mazda lamp. The ionization per unit flux was found to increase with increasing wave-length to a sharp maximum at the limit 1s=3184A of the principal series, as is required by the Bohr theory. For longer wave-lengths the ionization decreased to about 10 percent at 3400A. Photo-excitation. The simple theory does not admit of ionization by wave-lengths greater than 3184A but the data are in qualitative agreement with the hypothesis that such radiation produces excited atoms which upon collision with other atoms acquire sufficient additional energy to become ionized. Hence, unlike an x-ray limit, the photo-ionization effect for a valence electron is not sharply discontinuous at the true threshold for direct ionization.Photo-ionization photometer and intensitometer. A tube of the type described, with suitable gases for the range of wave-length involved, may be used as a photometer or may be calibrated to measure intensity of radiation directly.

Paul D. Foote and F. L. Mohler

1925-08-01T23:59:59.000Z

400

Gas Separation Using Organic-Vapor-Resistent Membranes In Conjunctin With Organic-Vapor-Selective Membranes  

DOE Patents [OSTI]

A process for treating a gas mixture containing at least an organic compound gas or vapor and a second gas, such as natural gas, refinery off-gas or air. The process uses two sequential membrane separation steps, one using membrane selective for the organic compound over the second gas, the other selective for the second gas over the organic vapor. The second-gas-selective membranes use a selective layer made from a polymer having repeating units of a fluorinated polymer, and demonstrate good resistance to plasticization by the organic components in the gas mixture under treatment, and good recovery after exposure to liquid aromatic hydrocarbons. The membrane steps can be combined in either order.

Baker, Richard W. (Palo Alto, CA); Pinnau, Ingo (Palo Alto, CA); He, Zhenjie (Fremont, CA); Da Costa, Andre R. (Menlo Park, CA); Daniels, Ramin (San Jose, CA); Amo, Karl D. (Mountain View, CA); Wijmans, Johannes G. (Menlo Park, CA)

2003-06-03T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Hybrid Vapor Compression Adsorption System: Thermal Storage Using Hybrid Vapor Compression Adsorption System  

SciTech Connect (OSTI)

HEATS Project: UTRC is developing a new climate-control system for EVs that uses a hybrid vapor compression adsorption system with thermal energy storage. The targeted, closed system will use energy during the battery-charging step to recharge the thermal storage, and it will use minimal power to provide cooling or heating to the cabin during a drive cycle. The team will use a unique approach of absorbing a refrigerant on a metal salt, which will create a lightweight, high-energy-density refrigerant. This unique working pair can operate indefinitely as a traditional vapor compression heat pump using electrical energy, if desired. The project will deliver a hot-and-cold battery that provides comfort to the passengers using minimal power, substantially extending the driving range of EVs.

None

2012-01-04T23:59:59.000Z

402

Chemical Occurrences  

Broader source: Energy.gov [DOE]

Classification of Chemical Occurrence Reports into the following four classes: Occurrences characterized by serious energy release, injury or exposure requiring medical treatment, or severe environmental damage, Occurrences characterized by minor injury or exposure, or reportable environmental release, Occurrences that were near misses including notable safety violations and Minor occurrences.

403

E-Print Network 3.0 - atomic vapor laser Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with the exception of pagination. IEEE TRANSACTIONS ON PLASMA SCIENCE 1 Summary: vapor, atomic physics and vapor ionization, absorption reflection in a heated plasma layer, and...

404

E-Print Network 3.0 - atom vapor cells Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

rotation in the vapor cell due to inten- sity-induced birefringence in the rubidium atomic vapor. While... Super efficient absorption filter for quantum memory using atomic...

405

r XXXX American Chemical Society A dx.doi.org/10.1021/ac201626b |Anal. Chem. XXXX, XXX, 000000 pubs.acs.org/ac  

E-Print Network [OSTI]

proposed as a platform for miniaturized chemical sen- sor systems. However, only a few systems achieve massr XXXX American Chemical Society A dx.doi.org/10.1021/ac201626b |Anal. Chem. XXXX, XXX, 000­000 ARTICLE pubs.acs.org/ac Chemical Vapor Detection Using a Capacitive Micromachined Ultrasonic Transducer

Khuri-Yakub, Butrus T. "Pierre"

406

Preliminary assessment of halogenated alkanes as vapor-phase tracers  

SciTech Connect (OSTI)

New tracers are needed to evaluate the efficiency of injection strategies in vapor-dominated environments. One group of compounds that seems to meet the requirements for vapor-phase tracing are the halogenated alkanes (HCFCs). HCFCs are generally nontoxic, and extrapolation of tabulated thermodynamic data indicate that they will be thermally stable and nonreactive in a geothermal environment. The solubilities and stabilities of these compounds, which form several homologous series, vary according to the substituent ratios of fluorine, chlorine, and hydrogen. Laboratory and field tests that will further define the suitability of HCFCs as vapor-phase tracers are under way.

Adams, Michael C.; Moore, Joseph N.; Hirtz, Paul

1991-01-01T23:59:59.000Z

407

Mercury Vapor At Medicine Lake Area (Kooten, 1987) | Open Energy  

Open Energy Info (EERE)

Kooten, 1987) Kooten, 1987) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Medicine Lake Area (Kooten, 1987) Exploration Activity Details Location Medicine Lake Area Exploration Technique Mercury Vapor Activity Date Usefulness could be useful with more improvements DOE-funding Unknown References Gerald K. Van Kooten (1987) Geothermal Exploration Using Surface Mercury Geochemistry Retrieved from "http://en.openei.org/w/index.php?title=Mercury_Vapor_At_Medicine_Lake_Area_(Kooten,_1987)&oldid=386431" Category: Exploration Activities What links here Related changes Special pages Printable version Permanent link Browse properties 429 Throttled (bot load) Error 429 Throttled (bot load) Throttled (bot load) Guru Meditation:

408

Salinity Gradient Power: Utilizing Vapor Pressure Differences  

Science Journals Connector (OSTI)

...for re-verse electrodialysis (6). The difficulties...desalination, salt water is evaporated in...for their reverse electrodialysis model, in which...dissolved in the water: power is needed...chamber. Chemical treatment for sus-pended...reversing the fresh water and the brine in...

MARK OLSSON; GERALD L. WICK; JOHN D. ISAACS

1979-10-26T23:59:59.000Z

409

Chemical Accelerators The phrase "chemical accelerators"  

E-Print Network [OSTI]

Meetings Chemical Accelerators The phrase "chemical accelerators" is scarcely older than for one or two dozen people grew to include nearly a hundred. Chemical accelerators is a name sug- gested-volt region. Thus chemical accelerators can provide the same type of information for elemen- tary chemical

Zare, Richard N.

410

Catalytic Reactor For Oxidizing Mercury Vapor  

DOE Patents [OSTI]

A catalytic reactor (10) for oxidizing elemental mercury contained in flue gas is provided. The catalyst reactor (10) comprises within a flue gas conduit a perforated corona discharge plate (30a, b) having a plurality of through openings (33) and a plurality of projecting corona discharge electrodes (31); a perforated electrode plate (40a, b, c) having a plurality of through openings (43) axially aligned with the through openings (33) of the perforated corona discharge plate (30a, b) displaced from and opposing the tips of the corona discharge electrodes (31); and a catalyst member (60a, b, c, d) overlaying that face of the perforated electrode plate (40a, b, c) opposing the tips of the corona discharge electrodes (31). A uniformly distributed corona discharge plasma (1000) is intermittently generated between the plurality of corona discharge electrode tips (31) and the catalyst member (60a, b, c, d) when a stream of flue gas is passed through the conduit. During those periods when corona discharge (1000) is not being generated, the catalyst molecules of the catalyst member (60a, b, c, d) adsorb mercury vapor contained in the passing flue gas. During those periods when corona discharge (1000) is being generated, ions and active radicals contained in the generated corona discharge plasma (1000) desorb the mercury from the catalyst molecules of the catalyst member (60a, b, c, d), oxidizing the mercury in virtually simultaneous manner. The desorption process regenerates and activates the catalyst member molecules.

Helfritch, Dennis J. (Baltimore, MD)

1998-07-28T23:59:59.000Z

411

ARM - Field Campaign - Arctic Winter Water Vapor IOP  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

govCampaignsArctic Winter Water Vapor IOP govCampaignsArctic Winter Water Vapor IOP Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Arctic Winter Water Vapor IOP 2004.03.09 - 2004.04.09 Lead Scientist : Ed Westwater Data Availability http://www.etl.noaa.gov/programs/2004/wviop/data will contain quicklooks of all of the data. For data sets, see below. Summary During the IOP, the Ground-based Scanning Radiometer of NOAA/ETL, and the ARM MicroWave Radiometer and Microwave Profiler, yielded excellent data over a range of conditions. In all, angular-scanned and calibrated radiometric data from 22.345 to 380 GHz were taken. The Precipitable Water Vapor varied about an order of magnitude from 1 to 10 mm, and surface temperatures varied from about -10 to -40 deg. Celcius. Vaisala RS90

412

Overview of the ARM/FIRE Water Vapor Experiment (AFWEX)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Overview of the ARM/FIRE Water Vapor Overview of the ARM/FIRE Water Vapor Experiment (AFWEX) D. C. Tobin, H. E. Revercomb, and D. D. Turner University of Wisconsin-Madison Madison, Wisconsin Introduction An overview of the ARM/FIRE Water Vapor Experiment (AFWEX) is given. This field experiment was conducted during November-December 2000 near the central ground-based Atmospheric Radiation Measurement (ARM) site in north central Oklahoma, and was sponsored jointly by the ARM, the National Aeronautics and Space Administration (NASA) First ISCCP Regional Experiment (FIRE), and the National Polar-orbiting Operational Environmental Satellite System (NPOESS) programs. Its primary goal was to collect accurate measurements of upper-level (~8 to 12 km) water vapor near the ground-based ARM site. These data are being used to determine the accuracy of measurements that are

413

Low Level Heat Recovery Through Heat Pumps and Vapor Recompression  

E-Print Network [OSTI]

The intent of this paper is to examine the methods and economics of recovering low level heat through heat pumps and vapor recompression. Actual commercially available equipment is considered to determine the near-term and future economic viability...

Gilbert, J.

1980-01-01T23:59:59.000Z

414

Applications of Mechanical Vapor Recompression to Evaporation and Crystallization  

E-Print Network [OSTI]

there is no boiler plant available or when electrical power is priced competitively in comparison to steam. Vapor recompression is accomplished using centrifugal, axial-flow, or positive displacement compressors and these compressors can be powered by electricity...

Outland, J. S.

415

Hyperfine Studies of Lithium Vapor using Saturated Absorption Spectroscopy  

E-Print Network [OSTI]

the frequency of a laser with respect to an atomic spectral feature.[20] As such, saturated absorptionHyperfine Studies of Lithium Vapor using Saturated Absorption Spectroscopy? . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.3 Broadening Mechanisms . . . . . . . . . . . . . . . . . . . . . 15 3.4 Saturated Absorption

Cronin, Alex D.

416

Systems and methods for generation of hydrogen peroxide vapor  

DOE Patents [OSTI]

A system according to one embodiment includes a moisture trap for drying air; at least one of a first container and a second container; and a mechanism for at least one of: bubbling dried air from the moisture trap through a hydrogen peroxide solution in the first container for producing a hydrogen peroxide vapor, and passing dried air from the moisture trap into a headspace above a hydrogen peroxide solution in the second container for producing a hydrogen peroxide vapor. A method according one embodiment includes at least one of bubbling dried air through a hydrogen peroxide solution in a container for producing a first hydrogen peroxide vapor, and passing dried air from the moisture trap into a headspace above the hydrogen peroxide solution in a container for producing a second hydrogen peroxide vapor. Additional systems and methods are also presented.

Love, Adam H; Eckels, Joel Del; Vu, Alexander K; Alcaraz, Armando; Reynolds, John G

2014-12-02T23:59:59.000Z

417

Optical Precursors in Rubidium Vapor and Their Relation to Superradiance  

E-Print Network [OSTI]

Optical precursor is the sharp optical pulse front that does not show delay in absorptive media. In this thesis, optical precursor behavior in rubidium (Rb) vapor was investigated in the picoseconds regime. An amplified femtosecond laser was shaped...

Yang, Wenlong

2012-10-19T23:59:59.000Z

418

Photocoupling of Methane in Water Vapor to Saturated Hydrocarbons  

Science Journals Connector (OSTI)

Methane can be converted into alkanes (from C2 to C6) continuously by ultraviolet (185 nm) irradiation in the presence of water vapor. The products from this reaction are alkanes, which is different from the comp...

JunePyo Oh; Taketoshi Matsumoto; Junji Nakamura

2008-08-01T23:59:59.000Z

419

Mercury Vapor At Kawaihae Area (Thomas, 1986) | Open Energy Information  

Open Energy Info (EERE)

Mercury Vapor At Kawaihae Area (Thomas, 1986) Mercury Vapor At Kawaihae Area (Thomas, 1986) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Kawaihae Area (Thomas, 1986) Exploration Activity Details Location Kawaihae Area Exploration Technique Mercury Vapor Activity Date Usefulness not useful DOE-funding Unknown Notes The soil geochemistry yielded quite complex patterns of mercury concentrations and radonemanation rates within the survey area (Cox and Cuff, 1981c). Mercury concentrations (Fig. 38) showed a general minimum along the Kawaihae-Waimea roads and a broad trend of increasing mercury concentrations toward both the north and south. There is no correlation apparent between the mercury patterns and either the resistivity sounding data or the surface geology in the area. The radon emanometry data (Fig.

420

Mercury Vapor At Lualualei Valley Area (Thomas, 1986) | Open Energy  

Open Energy Info (EERE)

Mercury Vapor At Lualualei Valley Area (Thomas, 1986) Mercury Vapor At Lualualei Valley Area (Thomas, 1986) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Lualualei Valley Area (Thomas, 1986) Exploration Activity Details Location Lualualei Valley Area Exploration Technique Mercury Vapor Activity Date Usefulness useful DOE-funding Unknown Notes Soil mercury and radon emanation surveys were performed over much of the accessible surface of Lualualei Valley (Cox and Thomas, 1979). The results of these surveys (Figs 7 and 8) delineated several areas in which soil mercury concentrations or radon emanation rates were substantially above normal background values. Some of these areas were apparently coincident with the mapped fracture systems associated with the caldera boundaries.

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

D/sup -/ production by charge transfer in metal vapors  

SciTech Connect (OSTI)

Fast D/sup -/ ions can be produced from D/sup +/ by multiple charge-transfer collisions in a metal-vapor target. Experimental cross sections and thick-target D/sup -/ yields are presented and discussed. The high D/sup -/ yield experimentally observed from charge transfer in cesium vapor is consistent with recent low-energy cross-section calculations and measurements.

Schlachter, A.S.

1980-10-01T23:59:59.000Z

422

Injection locked oscillator system for pulsed metal vapor lasers  

DOE Patents [OSTI]

An injection locked oscillator system for pulsed metal vapor lasers is disclosed. The invention includes the combination of a seeding oscillator with an injection locked oscillator (ILO) for improving the quality, particularly the intensity, of an output laser beam pulse. The present invention includes means for matching the first seeder laser pulses from the seeding oscillator to second laser pulses of a metal vapor laser to improve the quality, and particularly the intensity, of the output laser beam pulse.

Warner, Bruce E. (Livermore, CA); Ault, Earl R. (Dublin, CA)

1988-01-01T23:59:59.000Z

423

Tank 241-S-102 headspace gas and vapor characterization results for samples collected in March 1995  

SciTech Connect (OSTI)

Significant changes have been made to all of the original vapor characterization reports. This report documents specific headspace gas and vapor characterization results for all vapor sampling events to date. In addition, changes have been made to the original vapor reports to qualify the data based on quality assurance issues associated with the performing laboratories

Huckaby, J.L. [Pacific Northwest Lab., Richland, WA (United States); Bratzel, D.R. [Westinghouse Hanford Co., Richland, WA (United States)

1995-09-26T23:59:59.000Z

424

investigating the source, transport, and isotope fractionation of water vapor in the atmospheric boundary layer  

E-Print Network [OSTI]

investigating the source, transport, and isotope fractionation of water vapor in the atmospheric cospectral similarity for temperature and water vapor isotope fluxes. mixing ratio generator Routine field use in water vapor isotope research. The unit generates a stable water vapor mixing ratio by measuring

Minnesota, University of

425

Calculating the vapor pressure of water from the second law of thermodynamics  

Science Journals Connector (OSTI)

Calculating the vapor pressure of water from the second law of thermodynamics ... Thermodynamics ...

M. H. Everdell

1969-01-01T23:59:59.000Z

426

The growth of vapor bubble and relaxation between two-phase bubble flow  

Science Journals Connector (OSTI)

This paper presents the behavior of the bubble growth and relaxation between vapor and superheated...

S. Mohammadein; Rama Subba Reddy Gorla

2003-01-01T23:59:59.000Z

427

Tank Vapor Characterization Project: Annual status report for FY 1996  

SciTech Connect (OSTI)

In Fiscal Year 1996, staff at the Vapor Analytical Laboratory at Pacific Northwest National Laboratory performed work in support of characterizing the vapor composition of the headspaces of radioactive waste tanks at the Hanford Site. Work performed included support for technical issues and sampling methodologies, upgrades for analytical equipment, analytical method development, preparation of unexposed samples, analyses of tank headspaces samples, preparation of data reports, and operation of the tank vapor database. Progress made in FY 1996 included completion and issuance of 50 analytical data reports. A sampling system comparison study was initiated and completed during the fiscal year. The comparison study involved the vapor sampling system (VSS), a truck-based system, and the in situ vapor sampling system (ISVS), a cart-based system. Samples collected during the study were characterized for inorganic, permanent gases, total non-methane organic compounds and organic speciation by SUMMA{trademark} and TST methods. The study showed comparable sampling results between the systems resulting in the program switching from the VSS to the less expensive ISVS methodology in late May 1996. A temporal study was initiated in January 1996 in order to understand the influences seasonal temperatures changes have on the vapors in the headspace of Hanford waste tanks. A holding time study was initiated in the fourth quarter of FY 1996. Samples were collected from tank S-102 and rushed to the laboratory for time zero analysis. Additional samples will be analyzed at 1, 2, 4, 8, 16, and 32 weeks.

Silvers, K.L.; Fruchter, J.S.; Huckaby, J.L.; Almeida, T.L.; Evans, J.C. Jr.; Pool, K.H.; Simonen, C.A.; Thornton, B.M.

1997-01-01T23:59:59.000Z

428

Chemical Science  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Chemical Science Chemical Science Compton double ionization of helium in the region of the cross-section maximum B. Krässig, R.W. Dunford, D.S. Gemmell, S. Hasegawa, E.P. Kanter, H. Schmidt-Böcking, W. Schmitt, S.H. Southworth, Th. Weber, and L. Young Crystal structure analysis of microporous Na16Nb12.8Ti3.2O44.8(OH)3.2l8H2O and Na/Nb/Zr/O/H2O phases A. Tripathi, J. Parise, M. Nyman, T.M. Nenoff, and W. Harrison Double K-photoionization of heavy atoms R.W. Dunford, D.S. Gemmell, E.P. Kanter, B. Krässig, and S.H. Southworth Forward-backward asymmetries of atomic photoelectrons S.H. Southworth, B. Krässig, E.P. Kanter, J.C. Bilheux, R.W. Dunford, D.S. Gemmell, S. Hasegawa, and L. Young In situreduction of various iron oxides to form high-surface-area Fe-metal catalysts as studied by high-resolution powder diffraction

429

Oxidation of Slurry Aluminide Coatings on Cast Stainless Steel Alloy CF8C-Plus at 800oC in Water Vapor  

SciTech Connect (OSTI)

A new, cast austenitic stainless steel, CF8C-Plus, has been developed for a wide range of high temperature applications, including diesel exhaust components, turbine casings and turbocharger housings. CF8C-Plus offers significant improvements in creep rupture life and creep rupture strength over standard CF8C steel. However, at higher temperatures and in more aggressive environments, such as those containing significant water vapor, an oxidation-resistant protective coating will be necessary. The oxidation behavior of alloys CF8C and CF8C-Plus with various aluminide coatings were compared at 800oC in air plus 10 vol% water vapor. Due to their affordability, slurry aluminides were the primary coating system of interest, although chemical vapor deposition (CVD) and pack cementation coatings were also compared. Additionally, a preliminary study of the low cycle fatigue behavior of aluminized CF8C-Plus was conducted at 800oC. Each type of coating provided substantial improvements in oxidation behavior, with simple slurry aluminides showing very good oxidation resistance after 4,000 h testing in water vapor. Preliminary low cycle fatigue results indicated that thicker aluminide coatings degraded high temperature fatigue properties of CF8C-Plus, whereas thinner coatings did not. Results suggest that appropriately designed slurry aluminide coatings are a viable option for economical, long-term oxidation protection of austenitic stainless steels in water vapor.

Haynes, James A [ORNL; Armstrong, Beth L [ORNL; Dryepondt, Sebastien N [ORNL; Kumar, Deepak [ORNL; Zhang, Ying [Tennessee Technological University

2013-01-01T23:59:59.000Z

430

Transmission electron microscopy and Monte Carlo simulations of ordering in Au-Cu clusters produced in a laser vaporization source  

Science Journals Connector (OSTI)

Au-Cu bimetallic alloy clusters are produced in a laser vaporization source starting from Au-Cu alloy targets with different stoichiometric compositions. The clusters are deposited on two different substrates—amorphous carbon and crystalline MgO—and are characterized by electron diffraction and high-resolution electron microscopy. The experiments show that the overall chemical composition in the clusters is the same as the chemical composition of the target material; but the crystal structure of the Au-Cu alloy clusters differs from their known bulk crystal structure. Electron microscopy experiments provide evidence that no chemical ordering exists between Au and Cu atoms and that the clusters are solid solutions. Monte Carlo simulations using the second moment tight-binding approximation, however, predict Cu3Au clusters ordered in the core but with a disordered mantle. The possible origins of the differences between experiment and Monte Carlo simulations are discussed.

B. Pauwels; G. Van Tendeloo; E. Zhurkin; M. Hou; G. Verschoren; L. Theil Kuhn; W. Bouwen; P. Lievens

2001-03-27T23:59:59.000Z

431

Preparation and Analysis of Cyclodextrin-Based Metal–Organic Frameworks: Laboratory Experiments Adaptable for High School through Advanced Undergraduate Students  

Science Journals Connector (OSTI)

First-Year Undergraduate/General; Second-Year Undergraduate; Upper-Division Undergraduate; Laboratory Instruction; Inorganic Chemistry; High School/Introductory Chemistry; Hands-On Learning/Manipulatives; Materials Science; Crystals/Crystallography; Green Chemistry ... The authors gratefully acknowledge financial support from Wesleyan University and the National Science Foundation CAREER program (award CHE-1352239). ... (a) Furukawa, H.; Cordova, K. E.; O’Keeffe, M.; Yaghi, O. M.The Chemistry and Applications of Metal-Organic Frameworks Science 2013, 341 ( 6149) 974– 986 ...

Merry K. Smith; Samantha R. Angle; Brian H. Northrop

2014-11-06T23:59:59.000Z

432

Measurements of water vapor adsorption on the Geysers rocks  

SciTech Connect (OSTI)

The ORNL high temperature isopiestic apparatus was adapted for adsorption measurements. The quantity of water retained by rock samples taken from three different wells of The Geysers was measured at 150 °C and at 200 °C as a function of pressure in the range 0.00 ? p/p0 ? 0.98, where p0 is the saturated water vapor pressure. The rocks were crushed and sieved into three fractions of different grain sizes (with different specific surface areas). Both adsorption (increasing pressure) and desorption (decreasing pressure) runs were made in order to investigate the nature and extent of the hysteresis. Additionally, BET surface area analyses were performed by Porous Materials Inc. on the same rock samples using nitrogen or krypton adsorption measurements at 77 K. Specific surface areas and pore volumes were determined. These parameters are important in estimating water retention capability of a porous material. The same laboratory also determined the densities of the samples by helium pycnometry. Their results were then compared with our own density values obtained by measuring the effect of buoyancy in compressed argon. One of the goals of this project is to determine the dependence of the water retention capacity of the rocks as a function of temperature. The results show a significant dependence of the adsorption and desorption isotherms on the grain size of the sample. The increase in the amount of water retained with temperature observed previously (Shang et al., 1994a, 1994b, 1995) between 90 and 130°C for various reservoir rocks from The Geysers may be due to the contribution of slow chemical adsorption and may be dependent on the time allowed for equilibration. In contrast with the results of Shang et al. (1994a, 1994b, 1995), some closed and nearly closed hysteresis loops on the water adsorption/desorption isotherms (with closing points at p/p0 ? 0.6) were obtained in this study. In these cases the effects of activated processes were not present, and no increase in water adsorption with temperature was observed

Gruszkiewicz, Miroslaw S.; Horita, Juske; Simonson, John M.; Mesmer, Robert E.

1996-01-24T23:59:59.000Z

433

Strong CO2 Binding in a Water-Stable, Triazolate-Bridged Metal-Organic Framework Functionalized with Ethylenediamine  

E-Print Network [OSTI]

as analogues of known tetrazolate-bridged structures8 with enhanced chemical and thermal stability as a result

434

Mercury Source Zone Identification using Soil Vapor Sampling and Analysis  

SciTech Connect (OSTI)

Development and demonstration of reliable measurement techniqes that can detect and help quantify the nature and extent of elemental mercury (Hg(0)) in the subsurface are needed to reduce certainties in the decision making process and increase the effectiveness of remedial actions. We conducted field tests at the Y-12 National Security Complex (NSC) in Oak Ridge, TN, to determine if sampling and analysis of Hg(0) vapors in the shallow subsurface (<0.3 m depth) can be used to as an indicator of the location and extent of Hg(0) releases in the subsurface. We constructed a rigid PVC pushprobe assembly, which was driven into the ground. Soil gas samples were collected through a sealed inner tube of the assembly and analyzed immediately in the field with a Lumex and/or Jerome Hg(0) analyzer. Time-series sampling showed that Hg vapor concentrations were fairly stable over time suggesting that the vapor phase Hg(0) was not being depleted and that sampling results were not dependent on the soil gas purge volume. Hg(0) vapor data collected at over 200 pushprobe locations at 3 different release sites correlated well to areas of known Hg(0) contamination. Vertical profiling of Hg(0) vapor concentrations conducted at 2 locations provided information on the vertical distribution of Hg(0) contamination in the subsurface. We concluded from our studies that soil gas sampling and analysis can be conducted rapidly and inexpensively at a large scale to help identify areas contaminated with Hg(0).

Watson, David B [ORNL] [ORNL; Miller, Carrie L [ORNL] [ORNL; Lester, Brian P [ORNL] [ORNL; Lowe, Kenneth Alan [ORNL] [ORNL; Southworth, George R [ORNL] [ORNL; Bogle, Mary Anna [ORNL] [ORNL; Liang, Liyuan [ORNL] [ORNL; Pierce, Eric M [ORNL] [ORNL

2014-01-01T23:59:59.000Z

435

Vapor etching of nuclear tracks in dielectric materials  

DOE Patents [OSTI]

A process involving vapor etching of nuclear tracks in dielectric materials for creating high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes in dielectric materials that have been exposed to high-energy atomic particles. The process includes cleaning the surface of the tracked material and exposing the cleaned surface to a vapor of a suitable etchant. Independent control of the temperatures of the vapor and the tracked materials provide the means to vary separately the etch rates for the latent track region and the non-tracked material. As a rule, the tracked regions etch at a greater rate than the non-tracked regions. In addition, the vapor-etched holes can be enlarged and smoothed by subsequent dipping in a liquid etchant. The 20-1000 nm diameter holes resulting from the vapor etching process can be useful as molds for electroplating nanometer-sized filaments, etching gate cavities for deposition of nano-cones, developing high-aspect ratio holes in trackable resists, and as filters for a variety of molecular-sized particles in virtually any liquid or gas by selecting the dielectric material that is compatible with the liquid or gas of interest.

Musket, Ronald G. (Danville, CA); Porter, John D. (Berkeley, CA); Yoshiyama, James M. (Fremont, CA); Contolini, Robert J. (Lake Oswego, OR)

2000-01-01T23:59:59.000Z

436

Porous GaN nanowires synthesized using thermal chemical vapor deposition  

E-Print Network [OSTI]

Seo a , Jeunghee Park a,*, Hyunik Yang b , Bongsoo Kim c a Department of Chemistry, Korea University-791, Republic of Korea c Department of Chemistry, Korea Advanced Institute of Science and Technology, Daejeon nanotube-confined reaction [4], arc discharge [5], laser ablation [6], sublimation [7], pyrolysis [8

Kim, Bongsoo

437

Unsteady mixed convection in horizontal ducts with applications to chemical vapor deposition processes  

SciTech Connect (OSTI)

Mixed convection in a horizontal rectangular duct of aspect ratio 4 heated from below with cold side walls was studied numerically for a non-Boussinesq fluid. Results are presented for a reduced temperature of 2.33 and a Rayleigh number of 130,700. The resulting flow field at Re = 25 consisted of four steady longitudinal vortices, symmetric about the duct centerline, with a leading transverse roll cell. A reduction to Re = 10 resulted in the introduction of traveling transverse waves. A further reduction Re = 5 resulted in a loss of symmetry about the duct centerline plane. Further work is underway to verify the Re = 5 results.

Spall, R.E. [Univ. of South Alabama, Mobile, AL (United States). Dept. of Mechanical Engineering] [Univ. of South Alabama, Mobile, AL (United States). Dept. of Mechanical Engineering

1996-01-01T23:59:59.000Z

438

Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane  

E-Print Network [OSTI]

- iane SiH4 to disilane Si2H6 , to trisilane, Si3H8 2 leads to increased epitaxy growth rates at the same growth rate was 0.6 nm/min, and the disilane growth rate was 8 nm/min. In this work, we explored the use

439

Light-emitting nanocrystalline silicon by low-pressure chemical-vapor deposition of disilane  

Science Journals Connector (OSTI)

Porous silicon is an attractive material for silicon optoelectronics. The great advantage of porous silicon lies on the simple way of production which makes silicon nanostructures easily available. After sever...

C. Manfredotti; F. Fizzotti; G. Amato

1996-10-01T23:59:59.000Z

440

Forced convection and transport effects during hyperbaric laser chemical vapor deposition  

SciTech Connect (OSTI)

This work explores mass transport processes during HP-LCYD, including the transverse forced-flow of precursor gases through a nozzle to enhance fiber growth rates. The use of laser trapping and suspension of nano-scale particles in the precursor flow is also described, providing insights into the nature of the gas flow, including jetting from the fiber tip and thermodiffusion processes near the reaction zone. The effects of differing molecular-weight buffer gases is also explored in conjunction with the Soret effect, and it is found that nucleation at the deposit surface (and homogeneous nucleation in the gas phase) can be enhanced/ retarded, depending on the buffer gas molecular weight. To demonstrate that extensive microstructures can be grown simultaneously, three-dimensional fiber arrays are also grown in-parallel using diffractive optics--without delatory effects from neighboring reaction sites.

Maxwell, James L [Los Alamos National Laboratory; Chavez, Craig A [Los Alamos National Laboratory; Espinoza, Miguel [Los Alamos National Laboratory; Black, Marcie [Los Alamos National Laboratory; Maskaly, Karlene [Los Alamos National Laboratory; Boman, Mats [UPPSALA UNIV

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Laser photochemical growth of amorphous silicon at low temperatures and comparison with thermal chemical vapor deposition  

SciTech Connect (OSTI)

Pulsed ArF (193 nm) excimer laser radiation has been used to dissociate disilane (Si/sub 2/H/sub 6/, resulting in photochemically controlled deposition of amorphous Si thin films. A high stability HeNe (6328 A) laser was used for precise in situ monitoring of film deposition rates, under varying deposition conditions. A helium window purge nearly eliminated Si film deposition on the chamber windows. With the excimer laser beam parallel to the substrate, deposition of amorphous Si can be controlled entirely by the photon fluence (negligible background thermal growth) at temperatures from room temperature up to /approximately/400/degree/C. Reasonable photolytic deposition rate (>1 A/sec) are combined with 'digital' control of film thickness (/approx gt/0.02 A/laser pulse). Activation energies of 1.50 (+-0.1) eV and 0.09 (+-0.02) eV were found for pyrolytic and photolytic deposition, respectively. 15 refs., 3 figs.

Eres, D.; Lowndes, D.H.; Geohegan, D.B.; Mashburn, D.N.

1987-01-01T23:59:59.000Z

442

Chemical Vapor Deposition Epitaxy of Silicon-based Materials using Neopentasilane  

E-Print Network [OSTI]

of dichlorosilane, silane, disilane, and neopentasilane vs. inverse temperature observed in our lab on Si(100 dichlorosilane is not observable, and that for silane and disilane were 0.6 and 8 ECS Transactions, 16 (10) 799 sources of dichlorosilane (DCS), silane, disilane and neopentasilane (NPS) precursor on (100) silicon

443

Plasma-enriched chemical vapor deposition of silicon nitride on silicon carbide fibers  

SciTech Connect (OSTI)

Near stoichiometric Si:N coatings were deposited by means of PECVD on SCS-6 SiC fibers which contained a carbon-rich coating. Weight loss associated with oxidation of the outer carbon-rich coating of the as-received SiC fibers was greatly reduced for the Si:N coated SiC fibers even after 10 h heat-treatment in oxygen at 800{degrees}C. Auger Electron Spectroscopy (AES) was used to obtain elemental compositions of the as-received and Si:N coated SiC fibers after heat-treatment. Negligible amounts of oxygen were found at the carbon-rich coating of the heat-treated Si:N coated SiC fiber. These results clearly prove the effectiveness of PECVD silicon nitride coating as an oxygen diffusion barrier.

Stinespring, C.D.; Collazos, D.F.; Gupta, R.K. [West Virginia Univ., Morgantown, WV (United States)] [and others

1994-12-31T23:59:59.000Z

444

Highly Efficient Field Emission from Carbon Nanotube?Nanohorn Hybrids Prepared by Chemical Vapor Deposition  

Science Journals Connector (OSTI)

§ Research and Development Department, NEC Lighting, Ltd., 3-1 Nichiden, Minakuchi, Koga, 528-8501, Japan ... However, the poor dispersibility of CNTs in solutions due to entanglement and bundling results in inhomogeneous distribution of CNTs in the electrodes, leading to patchy light emission. ... (25, 26) Their potential applications as catalyst supports,(25, 26) capacitor electrodes,(27) and drug carriers(28, 29) in medical fields have also been studied. ...

Ryota Yuge; Jin Miyawaki; Toshinari Ichihashi; Sadanori Kuroshima; Tsutomu Yoshitake; Tetsuya Ohkawa; Yasushi Aoki; Sumio Iijima; Masako Yudasaka

2010-11-10T23:59:59.000Z

445

Oxidative and initiated chemical vapor deposition for application to organic electronics  

E-Print Network [OSTI]

Since the first discovery of polymeric conductors in 1977, the research area of "organic electronics" has grown dramatically. However, methods for forming thin films comprised solely of conductive polymers are limited by ...

Im, Sung Gap

2009-01-01T23:59:59.000Z

446

Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition  

E-Print Network [OSTI]

Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and ...

Keast, Craig L.

447

Current Issues and Problems in the Chemical Vapor Deposition of Diamond  

Science Journals Connector (OSTI)

...FOR DIAMOND COATINGS, JOURNAL...TO DIAMOND COATINGS, THIN SOLID...SAVVIDES, N, OPTICAL-CONSTANTS...DIAMOND CERAMIC COATING OF THE FUTURE...AND THEIR APPLICATION AS OVERCOATS ON THIN-FILM MEDIA FOR...EFFECT IN THE CVD GROWTH OF...

Walter A. Yarbrough; Russell Messier

1990-02-09T23:59:59.000Z

448

Low Temperature Chemical Vapor Deposition of Zirconium Nitride in a Fluidized Bed  

E-Print Network [OSTI]

thick) on uranium-molybdenum (UMo) particulate fuel. Plate-type fuel with U-xMo (x = 3 to 10 wt.%) particle fuel dispersed in an aluminum matrix is under development at Idaho National Laboratory (INL) for the Reduced Enrichment for Research and Test...

Arrieta, Marie

2012-10-19T23:59:59.000Z

449

Oxidative chemical vapor deposition of semiconducting polymers and their use In organic photovoltaics  

E-Print Network [OSTI]

Organic photovoltaics (OPVs) have received significant interest for their potential low cost, high mechanical flexibility, and unique functionalities. OPVs employing semiconducting polymers in the photoactive layer have ...

Borrelli, David Christopher

2014-01-01T23:59:59.000Z

450

E-Print Network 3.0 - assisted chemical vapor Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Tetrakis(dimethylamino)titanium(IV) P-6331 Date: February 2005 Copyright 2005, Praxair Technology, Inc. Page 1 of 8 Summary: Technology, Inc. Page 1 of 8 All rights...

451

JOURNAL OF MATERIALS SCIENCE 34 (1999) 7 20 Atomistic simulation of chemical vapor  

E-Print Network [OSTI]

decade [1­3]. The gas mixture is typically heated using hot fila- ments, plasmas, combustion flames gas mixture containing a small amount of hydrocarbon (usually methane CH4, acetylene C2H2, and so on, and formation of various hydrocarbon radicals. Although under standard CVD processing conditions graphite

Grujicic, Mica

452

Growing carbon nanotubes by microwave plasma-enhanced chemical vapor deposition  

E-Print Network [OSTI]

observed from multiwalled carbon nanotubes produced by arc discharge.6 Recent experimental studies have of nanocarbon on large scales ever since it was first observed at the cathode in an electric arc evaporation experi- ment where the anode had been consumed.1 In addition to the refinement of the arc discharge

Qin, Lu-Chang

453

Towards improved spinnability of chemical vapor deposition generated multi-walled carbon nanotubes  

E-Print Network [OSTI]

for electric fields, such as those present in arc- dischargeelectric field during synthesis, such as that present in the arc-discharge

McKee, Gregg Sturdivant Burke

2008-01-01T23:59:59.000Z

454

Electrical optimization of plasma-enhanced chemical vapor deposition chamber cleaning plasmas  

Science Journals Connector (OSTI)

Fluorinated gas discharges are widely used by the semiconductor industry in etching and chamber cleaning applications but the performance of these discharges varies in unpredictable ways for unknown reasons believed to be electrical in origin. To investigate possible mechanisms for this behavior we have measured the electrical characteristics of NF 3 /Ar CF 4 /O 2 /Ar and C 2 F 6 /O 2 /Ar chamber cleaning plasmas at 6.7–267 Pa in a 13.56 MHz capacitively coupled parallel-plate reactor using radio-frequency current and voltage probes and optical emission spectroscopy. From the measurements power losses in the external circuitry surrounding the discharge were determined. Furthermore using the measurements and equivalent circuit models the mechanisms by which power was absorbed within the discharge itself were investigated. Power was absorbed most efficiently at particular values of the discharge impedance. These optimal impedances occur in the middle of a transition from capacitive impedances at low pressures to resistive impedances at high pressures. These results illustrate that the plasma impedance is a useful parameter for monitoring and optimizing plasma processes in highly electronegative gases.

M. A. Sobolewski; J. G. Langan; B. S. Felker

1998-01-01T23:59:59.000Z

455

Improved sensor selectivity for chemical vapors using organic thin-film transistors  

E-Print Network [OSTI]

2011). B. D. Rihter, M. E. Kenney, W. E. Ford, and M. A. J.2008). B. D. Rihter, M. E. Kenney, W. E. Ford, and M. A. J.

Royer, James Edward

2012-01-01T23:59:59.000Z

456

Solar-Grade Silicon from Metallurgical-Grade Silicon Via Iodine Chemical Vapor Transport Purification: Preprint  

SciTech Connect (OSTI)

This conference paper describes the atmospheric-pressure in an ''open'' reactor, SiI2 transfers from a hot (>1100C) Si source to a cooler (>750C) Si substrate and decomposes easily via 2SiI2 Si+ SiI4 with up to 5?m/min deposition rate. SiI4 returns to cyclically transport more Si. When the source is metallurgical-grade Si, impurities can be effectively removed by three mechanisms: (1) differing free energies of formation in forming silicon and impurity iodides; (2) distillation; and (3) differing standard free energies of formation during deposition. Distillation has been previously reported. Here, we focused on mechanisms (1) and (3). We made feedstock, analyzed the impurity levels, grew Czochralski single crystals, and evaluated crystal and photovoltaic properties. Cell efficiencies of 9.5% were obtained. Incorporating distillation (step 2) should increase this to a viable level.

Ciszek, T. F.; Wang, T. H.; Page, M. R.; Bauer, R. E.; Landry, M. D.

2002-05-01T23:59:59.000Z

457

Chemical vapor deposition of conjugated polymeric thin films for photonic and electronic applications  

E-Print Network [OSTI]

(cont.) Conjugated polymers have delocalized electrons along the backbone, facilitating electrical conductivity. As thin films, they are integral to organic semiconductor devices emerging in the marketplace, such as flexible ...

Lock, John P

2005-01-01T23:59:59.000Z

458

Chem. Mater. 1994, 6, 2279-2287 2279 Chemical Vapor Deposition of Zinc from Diallyl Zinc  

E-Print Network [OSTI]

-containingmaterials such as the 11-VI compound semiconductors used in the manufac- ture of light emitting diodes and solar cell. The organic byproducts generated under CVD conditions are 1,5- hexadiene (76 mol %), 2-methyl-1,Cpentadiene (14 mol %), and propene (10 mol %); except for the pentadiene product, analogous hydrocarbons

Girolami, Gregory S.

459

Low Temperature Direct Growth of Graphene Films on Transparent Substrates by Chemical Vapor Deposition  

E-Print Network [OSTI]

graphene in fields like electronics and optoelectronics.useful for electronics, optoelectronics and photovoltaic

Antoine, Geoffrey Sandosh Jeffy

2013-01-01T23:59:59.000Z

460

Prevention of biofouling in seawater desalination via initiated chemical vapor deposition (iCVD)  

E-Print Network [OSTI]

Biofouling, the undesirable settlement and growth of organisms, occurs immediately when a clean surface is immersed in natural seawater. It is a universal problem and the bottleneck for seawater desalination, which reduces ...

Yang, Rong, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Reactor design for uniform chemical vapor deposition-grown films without substrate rotation  

DOE Patents [OSTI]

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

Wanlass, Mark (Golden, CO)

1987-01-01T23:59:59.000Z

462

Reactor design for uniform chemical vapor deposition-grown films without substrate rotation  

DOE Patents [OSTI]

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

Wanlass, M.

1985-02-19T23:59:59.000Z

463

In-situ observations during chemical vapor deposition of hexagonal boron nitride on polycrystalline copper  

E-Print Network [OSTI]

-characterised the Cu catalyst exposed to ammonia (NH3, i.e. a nitrogen and hydrogen source without B) instead of borazine under similar pressures. For this ammonia exposure no expansion in the Cu lattice constant is found. As ammonia is known to dissociate on Cu... 1s (Figure 5a,b,c) and valence band (Supporting Figure S4) regions.12 We find that before CVD the as loaded Cu foil surface is heavily oxidized due to storage and transportation in ambient air (before step 1).12 Following an anneal (step 2) in H2...

Kidambi, Piran R.; Blume, Raoul; Kling, Jens; Wagner, Jakob B.; Baehtz, Carsten; Weatherup, Robert S.; Schlögl, Robert; Bayer, Bernhard C.; Hofmann, Stephan

2014-10-20T23:59:59.000Z

464

Formation of Polycyanoacrylate?Silica Nanocomposites by Chemical Vapor Deposition of Cyanoacrylates on Aerogels  

Science Journals Connector (OSTI)

While an improvement over untreated aerogels was observed, it is likely that the low molecular weights of the polycyanoacrylate making up the coating limited improvement in mechanical strength relative to the unmodified aerogel. ... Sol?gel preparations, CVD apparatus, NMR spectrum of solid state CVD coated aerogel, and data table of results from coatings (PDF). ...

Dylan J. Boday; Kimberly A. DeFriend; Kennard V. Wilson, Jr.; David Coder; Douglas A. Loy

2008-04-02T23:59:59.000Z

465

Current Issues and Problems in the Chemical Vapor Deposition of Diamond  

Science Journals Connector (OSTI)

...SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND SILICON-CARBIDE...FROM METHANE HYDROGEN WATER MIXED GAS-USING A MICROWAVE...diamond and cubic boron nitride (c-BN; Bora-zon...be related to a high solubility or mobility for C on...

Walter A. Yarbrough; Russell Messier

1990-02-09T23:59:59.000Z

466

Selective Chemical Vapor Deposition of Manganese Self-Aligned Capping Layer for Cu Interconnections  

E-Print Network [OSTI]

could not be broken apart. This Mn-enhanced binding strength of Cu to insulators is observed for all and nitrides. An adhesive tape is usually sufficient to remove copper films from these surfaces. Quantitative reliability because cobalt on the dielectric can increase leakage and lower the breakdown voltage.4 Cobalt

467

Direct Spinning of Carbon Nanotube Fibers from Chemical Vapor Deposition Synthesis  

Science Journals Connector (OSTI)

...types of fiber and to the spin coating of rotating objects in general...high-purity nanotubes to form an aerogel (19) in the furnace hot zone...macroscopic objects by spin coating differently shaped formers...nanotubes and the thickness of the coatings can be reasonably controlled...

Ya-Li Li; Ian A. Kinloch; Alan H. Windle

2004-04-09T23:59:59.000Z

468

Step-coverage simulation for tetraethoxysilane and ozone atmospheric pressure chemical vapor deposition  

SciTech Connect (OSTI)

A simulation model for atmospheric pressure (AP) CVD has bee developed using one-dimensional diffusion and mass conservation equations. The model was applied to trench step-coverage of the tetraethoxysilane (TEOS) and O[sub 3] CVD, in which it was not necessary to consider lateral diffusion because of narrow (and deep) trenches. For nondoped silicate glass (NSG), the step-coverage of a 4.5 aspect ratio trench showed a good fit if a sticking probability of 0.0039 was assumed for the 0.6% ozone (in oxygen) deposition and of 0.0026 for the 6% ozone deposition (both 400 C). The reaction rate constant was compared with the diffusion mass-transfer coefficient, and the reaction proved to be limited by diffusion of the reactant, TEOS, which directly participated in the CVD reaction. For the 2 m/o phosphosilicate glass (PSG) step-coverage, which had a slight overhang, the model matched the obtained results well only when an active growth species with a high sticking probability of 1.0 was added to the growth species of nondoped oxide. This analytical simulation method satisfactorily explains the experimental data.

Fujino, K. (Semiconductor Process Lab., Toyko (Japan)); Egashira, Y.; Shimogaki, Y.; Komiyama, H. (Univ. of Tokyo, (Japan). Dept. of Chemical Engineering)

1993-08-01T23:59:59.000Z

469

Titanium Diboride Thin Films by Low-Temperature Chemical Vapor Deposition from the Single Source Precursor  

E-Print Network [OSTI]

metallic ceramic whose properties surpass those of transition metal nitride and carbide counterparts:1, and excellent corrosion resistance toward molten metals. In addition, it has a low electrical resistivity of 6 µ

Girolami, Gregory S.

470

A critical comparison of ionospheric depletion chemicals  

SciTech Connect (OSTI)

Six chemicals, H{sub 2}, H{sub 2}O, CO{sub 2}, SF{sub 6}, CF{sub 3}BR, and Ni(CO){sub 4}, are considered as ionospheric modification agents. Each of these species reacts in the F region to produce localized plasma depletions. The first three interact with O{sup +} and yield polyatomic ions which dissociatively recombine with electrons to give neutrals. The last three dissociatively attach electrons to produce heavy negative ions which become mutually neutralized by reactions with O{sup +}. The effectiveness of these chemicals depends on the amount which goes into the vapor state upon release. Thermodynamic calculations show that H{sub 2}O has the lowest vapor yield of about 20% from a heated, pressurized tank. Over 60% of the other substances should be vented in gaseous form. Based on estimates of plasma density reduction and airglow stimulation, nickel carbonyl is the most efficient of the six species for modifying the nighttime ionosphere. During the daytime, CF{sub 3}BR and SF{sub 6} provide the largest depletions.

Bernhardt, P.A. (Los Alamos National Lab., NM (United States))

1987-05-01T23:59:59.000Z

471

One-pot synthesis of a metal–organic framework as an anode for Li-ion batteries with improved capacity and cycling stability  

SciTech Connect (OSTI)

Metal–organic framework is a kind of novel electrode materials for lithium ion batteries. Here, a 3D metal–organic framework Co{sub 2}(OH){sub 2}BDC (BDC=1,4-benzenedicarboxylate) was synthesized for the first time by the reaction of Co{sup 2+} with a bio-inspired renewable organic ligand 1,4-benzenedicarboxylic acid through a solvothermal method. As an anode material for lithium ion batteries, this material exhibited an excellent cyclic stability as well as a large reversible capacity of ca. 650 mA h g{sup ?1} at a current density of 50 mA g{sup ?1} after 100 cycles within the voltage range of 0.02–3.0 V, higher than that of other BDC based anode. - Graphical abstract: The PXRD pattern and the cycleability curves (inset) of Co{sub 2}(OH){sub 2}BDC. Display Omitted - Highlights: • Co{sub 2}(OH){sub 2}BDC was synthesized through a one pot solvothermal process. • The solvent had a great effect on the purity of this material. • This material was used as anode material for lithium ion batteries for the first time. • Co{sub 2}(OH){sub 2}BDC showed improved capacity and cycling stability.

Gou, Lei, E-mail: Leigou@chd.edu.cn; Hao, Li-Min; Shi, Yong-Xin; Ma, Shou-Long; Fan, Xiao-Yong; Xu, Lei; Li, Dong-Lin, E-mail: dlli@chd.edu.cn; Wang, Kang

2014-02-15T23:59:59.000Z

472

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

473

Validation of TES Temperature and Water Vapor Retrievals with ARM  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Validation of TES Temperature and Water Vapor Retrievals with ARM Validation of TES Temperature and Water Vapor Retrievals with ARM Observations Cady-Pereira, Karen Atmospheric and Environmental Research, Inc. Shephard, Mark Atmospheric and Environmental Research, Inc. Clough, Shepard Atmospheric and Environmental Research Mlawer, Eli Atmospheric & Environmental Research, Inc. Turner, David University of Wisconsin-Madison Category: Atmospheric State and Surface The primary objective of the TES (Tropospheric Emission Spectrometer) instrument on the Aura spacecraft is the retrieval of trace gases, especially water vapor and ozone. The TES retrievals extremely useful for global monitoring of the atmospheric state, but they must be validated. The ARM sites are well instrumented and provide continuous measurements, which

474

Phase effects for electrons in liquid water and water vapor  

SciTech Connect (OSTI)

The objective of these studies is to compare transport, energy loss, and other phenomena for electrons in water in the liquid and vapor phases. Understanding the differences and similarities is an interesting physics problem in its own right. It is also important for applying the relatively large body of experimental data available for the vapor to the liquid, which is of greater relevance in radiobiology. This paper presents a summary of results from a series of collaborative studies carried out by the authors at Oak Ridge National Laboratory (ORNL) and the Gesellschaft fuer Strahlen- und Umweltforschung (GSF). 14 figs.

Turner, J.E.; Paretzke, H.G.; Wright, H.A.; Hamm, R.N.; Ritchie, R.H.

1988-01-01T23:59:59.000Z

475

The development of a passive dosimeter for airborne aniline vapors  

E-Print Network [OSTI]

passive sampl1ng dosimeter was designed to measure concen- trat1ons of aniline vapor in air. Diffus1on tubes of 1. 5, 3. 0 and 4. 5 cm lengths were tested under controlled conditions of relative humid1ty, air temperature and vapor concentrations. A... of Measured vs Calculated Concentrations APPENDIX D-Student-t Test on Slopes of Measured vs Calculated Data . APPENDIX E-Statistical Analysis of Four Hour Time- Weighted Average Study on 3. 0 cm Dosimeter VITA ~pa e 42 45 48 59 62 63 65 70 73...

Campbell, James Evan

1977-01-01T23:59:59.000Z

476

Solid–Liquid–Vapor Equilibrium Models for Cryogenic Biogas Upgrading  

Science Journals Connector (OSTI)

In cryogenic upgrading processes involving dry ice formation, accurate predictions of solid–liquid, solid–vapor, and solid–liquid–vapor equilibria are fundamental for a correct design of the heat exchanger surface in order to achieve the desired biomethane purity. ... Moreover, the liquefied biogas production process, particularly interesting for cryogenic upgrading processes due to the low temperature of the obtained biomethane, requires an accurate knowledge of carbon dioxide solubility in liquid methane to avoid solid deposition. ... For some applications demanding a high energy content gas, namely vehicle fuels and injection in the natural gas grid, the biogas has to be upgraded into biomethane. ...

Mauro Riva; Marco Campestrini; Joseph Toubassy; Denis Clodic; Paolo Stringari

2014-10-13T23:59:59.000Z

477

21 June 1997 ELSEVIER Chemical Physics Letters 272 (1997) 178-182  

E-Print Network [OSTI]

The synthesis and characterization of carbon fibers have been topical for many years [l-4]. The discov- ery recently developed a method using chemical vapor deposition catalyzed by iron nanoparticles embedded deposition. A deeply car- bonized tungsten filament was used to dissociate the introduced gases and generate

Wang, Zhong L.

478

Journal of the American Chemical Society 2012, volume 134, pages 8646-8654  

E-Print Network [OSTI]

301586m Diffusion Mechanism of Lithium Ion through Basal Plane of Layered Graphene Fei Yao,a,d Fethullah Shen Xie,a and Young Hee Lee,a a Department of Energy Science, BK21 Physics Division, Graphene Center diffusion mechanism. In this report, two types of graphene samples were prepared by chemical vapor

Boyer, Edmond

479

A FIRST ORDER PROJECTION-BASED TIME-SPLITTING SCHEME FOR COMPUTING CHEMICALLY REACTING FLOWS  

E-Print Network [OSTI]

factors, Ej the activation energies, R0 the universal gas constant, and Ci the concentrations, i, surface catalytic reactors for methane to methanol conversion and chemical vapor deposition (CVD) process, mass and energy. If we consider a bounded domain Rd, d = 2;3 where the reactive ow

480

CAMD Cleanroom Chemical List  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

CAMD Cleanroom Chemical List Chemicals on this list are routine use chemicals in the CAMD Cleanroom and are available to users for general use. All others (*) are approved for use...

Note: This page contains sample records for the topic "metalorganic chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

UNCORRECTEDPROOF 2 Vaporization, fusion and sublimation enthalpies of the  

E-Print Network [OSTI]

UNCORRECTEDPROOF 2 Vaporization, fusion and sublimation enthalpies of the 3 dicarboxylic acids from of Chemistry and Biochemistry, University of Missouri-St. Louis, 8001 Natural Bridge, St. Louis, MO 63121, USA observed previously in the sublimation enthalpies of these compounds. The results are dis- 16 cussed

Chickos, James S.

482

Vapor-side corrosion in thermal desalination plants  

SciTech Connect (OSTI)

This article reports the results of vapor-size corrosion monitoring studies carried out in multistage flash (MSF) desal unit No. 100 of Al-Khafji power and Desalination Plant in Saudi Arabia. Corrosion behavior of 70/30 Cu-Ni alloy, carbon steel (CS), and type 316L stainless steel (SS) was studied in vents and in the vapor size of distillers for 2,000, 4,000, and 9,000 h. Analyses of the experimental data indicated that in addition to O{sub 2}, S-containing compounds evolved during flashing of seawater reacted more with Cu-Ni alloy than with CS and type 316L SS. Explanations for comparatively higher corrosion of alloys exposed to the vapors of the first three (1 to 3) and middle (11 to 13) stages of the MSF plant are given with experimental results. Type 316L SS was found to be the alloy most resistant to vapor-side corrosion in all stages of distillers.

Asrar, N.; Malik, A.U.; Ahmed, S. [Saline Water Conversion Corp. (Saudi Arabia); Al-Khalidi, M.; Al-Moaili, K. [Al-Khafji Desalination Plant (Saudi Arabia)

1999-04-01T23:59:59.000Z

483

Fatigue Resistance of Asphalt Mixtures Affected by Water Vapor Movement  

E-Print Network [OSTI]

This dissertation has two key objectives: the first objective is to develop a method of predicting and quantifying the amount of water that can enter into a pavement system by vapor transport; the second objective is to identify to which extent...

Tong, Yunwei

2013-11-08T23:59:59.000Z

484

A transient model for a cesium vapor thermionic converter. [Cs  

SciTech Connect (OSTI)

This paper presents an analytical model for simulating the transient and steady-state operation of cesium vapor thermionic converters. A parametric analysis is performed to assess the transient response of the converter to changes in fission power and width of interelectrode gap. The model optimizes the converter performance for maximum electric power to the load.(AIP)

El-Genk, M.S.; Murray, C.S.; Chaudhuri, S. (Institute for Space Nuclear Power Studies, Department of Chemical and Nuclear Engineering, The University of New Mexico, Albuquerque, New Mexico (USA))

1991-01-10T23:59:59.000Z

485

Experimental Study of Water Vapor Adsorption on Geothermal  

E-Print Network [OSTI]

Geothermal Program under Department of Energy Grant No. DE-FG07-90IDI2934,and by the Department of PetroleumSGP-TR-148 Experimental Study of Water Vapor Adsorption on Geothermal Reservoir Rocks Shubo Shang Engineering, Stanford University Stanford Geothermal Program Interdisciplinary Research in Engineering

Stanford University

486

CVD CNT CNT (Vapor-grown carbon fiber, VGCF)  

E-Print Network [OSTI]

CNT CNT CVD CNT CNT (Vapor-grown carbon fiber, VGCF) 10001300 CNT CVD Smalley CO 24 CCVD 1 #12; 27 mm 3% 200 sccm 800 10 10 Torr 300 sccm Ethanol tank Hot bath boat Ar/H2 Ar or Ethanol tank Hot bath Ethanol tank Hot bath Pressure gauge Maindraintube Subdraintube

Maruyama, Shigeo

487

Method for removing metal vapor from gas streams  

DOE Patents [OSTI]

A process for cleaning an inert gas contaminated with a metallic vapor, such as cadmium, involves withdrawing gas containing the metallic contaminant from a gas atmosphere of high purity argon; passing the gas containing the metallic contaminant to a mass transfer unit having a plurality of hot gas channels separated by a plurality of coolant gas channels; cooling the contaminated gas as it flows upward through the mass transfer unit to cause contaminated gas vapor to condense on the gas channel walls; regenerating the gas channels of the mass transfer unit; and, returning the cleaned gas to the gas atmosphere of high purity argon. The condensing of the contaminant-containing vapor occurs while suppressing contaminant particulate formation, and is promoted by providing a sufficient amount of surface area in the mass transfer unit to cause the vapor to condense and relieve supersaturation buildup such that contaminant particulates are not formed. Condensation of the contaminant is prevented on supply and return lines in which the contaminant containing gas is withdrawn and returned from and to the electrorefiner and mass transfer unit by heating and insulating the supply and return lines.

Ahluwalia, R. K. (6440 Hillcrest Dr., Burr Ridge, IL 60521); Im, K. H. (925 Lehigh Cir., Naperville, IL 60565)

1996-01-01T23:59:59.000Z

488

Sorption and Diffusion of Organic Vapors in Two Fluoroelastomers  

E-Print Network [OSTI]

Sorption and Diffusion of Organic Vapors in Two Fluoroelastomers PING WANG,* NATHANIEL S. SCHNEIDER of II in polar liquids: over 100% (wt/wt) in two ketones and a phosphate ester. Sorption isotherms deter determined from sorption kinetics, corrected for nonisothermal effects, and converted to solvent self

Wang, Ping

489

High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy  

SciTech Connect (OSTI)

Solar cells based on dc magnetron sputtered indium tin oxide onto epitaxially grown films of p-InP have been fabricated and analyzed. The best cells had a global efficiency of 18.4% and an air mass zero (AMO) efficiency of 16.0%. The principal fabrication variable considered was the constituency of the sputtering gas and both argon/hydrogen and argon/oxygen mixtures have been used. The former cells have the higher efficiencies, are apparently stable, and exhibit almost ideal junction characteristics. The latter cells are relatively unstable and exhibit much higher ideality factors and reverse saturation current densities. The temperature dependence of the reverse saturation current indicates totally different charge transfer mechanisms in the two cases.

Li, X.; Wanlass, M.W.; Gessert, T.A.; Emery, K.A.; Coutts, T.J.

1989-05-01T23:59:59.000Z

490

Method and apparatus to measure vapor pressure in a flow system  

DOE Patents [OSTI]

The present invention is directed to a method for determining, by a condensation method, the vapor pressure of a material with a known vapor pressure versus temperature characteristic, in a flow system particularly in a mercury isotope enrichment process.

Grossman, Mark W. (Belmont, MA); Biblarz, Oscar (Swampscott, MA)

1991-01-01T23:59:59.000Z

491

Tropical Water Vapor and Cloud Feedbacks in Climate Models: A Further Assessment Using Coupled Simulations  

Science Journals Connector (OSTI)

By comparing the response of clouds and water vapor to ENSO forcing in nature with that in Atmospheric Model Intercomparison Project (AMIP) simulations by some leading climate models, an earlier evaluation of tropical cloud and water vapor ...

De-Zheng Sun; Yongqiang Yu; Tao Zhang

2009-03-01T23:59:59.000Z

492

pubs.acs.org/crystal Published on Web 09/22/2009 r 2009 American Chemical Society DOI: 10.1021/cg900531x  

E-Print Network [OSTI]

to the high thermal and chemical stability.14 A number of metal silicide nanowires, including TaSi2, TiSi2900531x 2009, Vol. 9 4514­4518 Cobalt Silicide Nanostructures: Synthesis, Electron Transport, and Field: Cobalt silicide nanostructures have been synthesized by a spontaneous chemical vapor transport

Wang, Zhong L.

493

chemical analysis | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

chemical analysis chemical analysis Leads No leads are available at this time. Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide. Abstract: As a...

494

TRENDS in Chemical Marketing  

Science Journals Connector (OSTI)

TRENDS in Chemical Marketing ... BEFORE any chemical sales organization, can meet or establish new trends in marketing, it must be completely aware of the problem it faces. ...

W. M. RUSSELL

1955-08-29T23:59:59.000Z

495

Economic and Technical Tradeoffs Between Open and Closed Cycle Vapor Compression Evaporators  

E-Print Network [OSTI]

and solute. Evaporation tends to be a very energy intensive process. Approximately 1000 BTUs of energy are required to vaporize one pound of water. Many techniques have been developed to reuse energy Within an evaporation system so as to vaporize... Recompression A schematic of an open cycle vapor recompression evaporator is shown in Figure 2. This method uses the vapor in an open cycle for both heating and cooling. Rather than being condensed after the last effect, steam is compressed to a slightly...

Timm, M. L.

496

Chemical Safety Program  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Program Program Home Chemical Safety Topical Committee Library Program Contacts Related Links Site Map Tools 2013 Chemical Safety Workshop Archived Workshops Contact Us Health and Safety HSS Logo Chemical Safety Program logo The Department of Energy's (DOE's) Chemical Safety web pages provide a forum for the exchange of best practices, lessons learned, and guidance in the area of chemical management. This page is supported by the Chemical Safety Topical Committee which was formed to identify chemical safety-related issues of concern to the DOE and pursue solutions to issues identified. Noteworthy products are the Chemical Management Handbooks and the Chemical Lifecycle Cost Analysis Tool, found under the TOOLS menu. Chemical Management Handbook Vol (1) Chemical Management Handbook Vol (2)

497

Quantitative Analysis of Ternary Vapor Mixtures Using a Microcantilever-Based Electronic Nose  

SciTech Connect (OSTI)

The authors report the identification and quantification of the components of a ternary vapor mixture using a microcantilever-based electronic nose. An artificial neural network was used for pattern recognition. Dimethyl methyl phosphonate vapor in ppb concentrations and water and ethanol vapors in ppm concentrations were quantitatively identified either individually or in binary and ternary mixtures at varying concentrations.

Pinnaduwage, Lal A [ORNL; Zhao, Weichang [ORNL; Gehl, Anthony C [ORNL; Allman, Steve L [ORNL

2007-01-01T23:59:59.000Z

498

Sample Vapor Introduction Techniques for Use with Cryofocusing GC Inlet Systems  

Science Journals Connector (OSTI)

......the vapor generator was operated at atmospheric pressure for...condensed water. Other studies...Because the water vapor was...tail of the water peak. Thus...obtained from an atmospheric pressure source...the vapor generator over a 1......

Christine L. Rankin; Richard D. Sacks

1994-01-01T23:59:59.000Z

499

Measurements of atmospheric water vapor above Mauna Kea using an infrared radiometer  

E-Print Network [OSTI]

Measurements of atmospheric water vapor above Mauna Kea using an infrared radiometer David A in atmospheric water vapor that distort the phase coherence of incoming celestial signals. The signal received water vapor, this paper presents results obtained with a second generation IRMA operating at the James

Naylor, David A.

500

High Throughput Combinatorial Screening of Biometic Metal-Organic Materials for Military Hydrogen-Storage Materials (New Joint Miami U/NREL DoD/DLA Project) (presentation)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Miami University/NREL DoD/DLA Project Miami University/NREL DoD/DLA Project High throughput combinatorial screening of biomimetic metal-organic materials for military hydrogen-storage applications Philip Parilla - NREL Joe Zhou, Dan Zhao - Miami U, Ohio Jeff Blackburn, Kevin O'Neill, Lin Simpson, Mike Heben - NREL Outline * Miami/NREL Project - Synthesis (Miami) - High Throughput Characterization (NREL) - Other Characterization * Other High Throughput Activities (NREL) - Parallel Sieverts - Parallel Gravimetric * Final Comments Overview of Miami/NREL Project * Goals - Development of H 2 storage materials based on MOFs, targeting 15 kJ/mole binding energy and high density of H 2 sites - Development of optical-based detection of adsorbed H 2 allowing rapid screening of samples * Approach - Combinatorial MOFs synthesis involving 8