Sample records for metal oxide semiconductor

  1. Metal Oxide Semiconductor Nanoparticles Open the Door to New...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovations Technology available for licensing: novel nanometer-sized metal oxide semiconductors that allow targeting, initiating and control of in vitro and in vivo chemical...

  2. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P. (Knoxville, TN)

    2001-01-01T23:59:59.000Z

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  3. Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capaci

    E-Print Network [OSTI]

    Stemmer, Susanne

    2011-01-01T23:59:59.000Z

    MOS (Metal Oxide Semiconductor) Phys- ics and Technologywas funded by the Semiconductor Re- search Corporation0.47 As metal-oxide-semiconductor capacitors Yoontae Hwang,

  4. Electrical characterization of native-oxide InAlPGaAs metal-oxide-semiconductor heterostructures using

    E-Print Network [OSTI]

    Electrical characterization of native-oxide InAlPÕGaAs metal-oxide-semiconductor heterostructures 8 December 2003; accepted 20 January 2004 InAIP native oxide/GaAs metal-oxide-semiconductor MOS of Schottky gates can lead to excessive gate leakage current and also restrict the forward gate bias to only

  5. active complementary metal-oxide-semiconductor: Topics by E-print...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Metal Oxide Semiconductor (CMOS) tech- Corresponding author. Email address: antonio 465 Tycho Brahe CCD CMOS Physics Websites Summary: 12;12;12;117 Tycho Brahe 20 19 70 CCD...

  6. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  7. HIGH-K-INAS METAL-OXIDE-SEMICONDUCTOR CAPACITORS FORMED BY ATOMIC-LAYER DEPOSITION

    E-Print Network [OSTI]

    -k-InAs metal-oxide-semiconductor capacitors. Devices are formed using various substrate pretreatments, film by the Terman method to be in the 1013 cm-2 -eV-1 range at midgap. TEM and XPS data suggest the high trap

  8. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect (OSTI)

    Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

    1998-10-14T23:59:59.000Z

    GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

  9. Hydrocarbon reaction with HF-cleaned Si(lOQ) and effects on metal-oxide-semiconductor device quality

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Hydrocarbon reaction with HF-cleaned Si(lOQ) and effects on metal-oxide-semiconductor device-cleaned Si( 100) towards hydrocarbon adsorption is examined by surface analysis; most hydrocarbons adsorb oxidation after HF treatment.4'5 In this letter, passivation against hydrocarbon contamination is studied

  10. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  11. Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film

    SciTech Connect (OSTI)

    Singh, Fouran; Kumar, Vinod [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Chaudhary, Babloo [Centre of Excellence in Material Sciences and Nanomaterials, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh, U.P. 202001 (India); Singh, R. G. [Department of Electronic Science, Maharaja Agrasen College, University of Delhi, New Delhi 110096 (India); Kumar, Sanjeev [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Department of Electronic Science, University of Delhi South Campus, New Delhi 110023 (India); Kapoor, A. [Department of Electronic Science, University of Delhi South Campus, New Delhi 110023 (India)

    2012-10-01T23:59:59.000Z

    This paper report on the disorder induced semiconductor to metal transition (SMT) and modifications of grain boundaries in nanocrystalline zinc oxide thin film. Disorder is induced using energetic ion irradiation. It eliminates the possibility of impurities induced transition. However, it is revealed that some critical concentration of defects is needed for inducing such kind of SMT at certain critical temperature. Above room temperature, the current-voltage characteristics in reverse bias attributes some interesting phenomenon, such as electric field induced charge transfer, charge trapping, and diffusion of defects. The transition is explained by the defects induced disorder and strain in ZnO crystallites created by high density of electronic excitations.

  12. Intrazeolite metal carbonyl phototopotaxy: From Tungsten(VI) oxide quantum dots to a zero-dimensional semiconductor quantum supralattice

    SciTech Connect (OSTI)

    Ozin, G.A.; Oezkar, S. (Univ. of Toronto, Ontario (Canada))

    1990-09-20T23:59:59.000Z

    Attention is focused on the use of simple binary metal carbonyls for the nucleation, growth, and stabilization of intrazeolite semiconductor quantum nanostructures. The rationale for selecting this particular group of precursor molecules relates to their volatility, molecular dimensions, ease of purification, availability, and facile and quantitative conversion to the respective metal oxide materials with minimal contamination by carbon. In this study the intrazeolite photooxidation chemistry of {alpha}-cage encapsulated hexacarbonyltungsten(0) in Na{sub 56}Y and H{sub 56}Y, n(W(CO){sub 6})-Na{sub 56}Y(H{sub 56}Y), with O{sub 2} provides a novel synthetic pathway to {alpha}-cage-located tungsten(VI) oxide n(WO{sub 3})-Na{sub 56}Y(H{sub 56}Y) intrazeolite quantum dots and a zero-dimensional semiconductor quantum supralattice (where n = 0-32), which might find applications as new solid-state materials for use in quantum electronic and nonlinear optic devices.

  13. Study of gate oxide traps in HfO[subscript 2]/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

    E-Print Network [OSTI]

    Sun, X.

    We introduce an ac-transconductance method to profile the gate oxide traps in a HfO[subscript 2] gated AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) that can exchange carriers with metal ...

  14. Characterization of Amorphous Zinc Tin Oxide Semiconductors....

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amorphous Zinc Tin Oxide Semiconductors. Characterization of Amorphous Zinc Tin Oxide Semiconductors. Abstract: Amorphous zinc tin oxide (ZTO) was investigated to determine the...

  15. Ballistic performance comparison of monolayer transition metal dichalcogenide MX{sub 2} (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors

    SciTech Connect (OSTI)

    Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K. [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

    2014-02-28T23:59:59.000Z

    We study the transport properties of monolayer MX{sub 2} (M?=?Mo, W; X?=?S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX{sub 2} MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX{sub 2} MOSFETs.

  16. Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron

    E-Print Network [OSTI]

    Ye, Peide "Peter"

    Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors the results of self-heating simulations of the GaN-based MOS-HEMTs, including hot electron and quantum effects of the gate and source/drain extension lengths on both the output performance and self-heating is discussed

  17. Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Siâ?â??xGex/Si virtual substrates

    E-Print Network [OSTI]

    Lee, Minjoo L.

    We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ??.â??Geâ??.â?? virtual substrates. The poor interface between silicon dioxide (SiOâ??) and the Ge channel ...

  18. Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

    SciTech Connect (OSTI)

    Kim, SangHyeon, E-mail: dadembyora@mosfet.t.u-tokyo.ac.jp, E-mail: sh-kim@kist.re.kr; Yokoyama, Masafumi; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko [Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan)

    2014-06-30T23:59:59.000Z

    We have investigated effects of the vertical scaling on electrical properties in extremely thin-body InAs-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs). It is found that the body thickness (T{sub body}) scaling provides better short channel effect (SCE) control, whereas the T{sub body} scaling also causes the reduction of the mobility limited by channel thickness fluctuation (?T{sub body}) scattering (?{sub fluctuation}). Also, in order to achieve better SCEs control, the thickness of InAs channel layer (T{sub channel}) scaling is more favorable than the thickness of MOS interface buffer layer (T{sub buffer}) scaling from a viewpoint of a balance between SCEs control and ?{sub fluctuation} reduction. These results indicate necessity of quantum well channel structure in InAs-OI MOSFETs and these should be considered in future transistor design.

  19. Chemical dynamics and bonding at gas/semiconductor and oxide/semiconductor interfaces

    E-Print Network [OSTI]

    Bishop, Sarah R.

    2010-01-01T23:59:59.000Z

    applied to alternative semiconductor materials to determinephase oxides and semiconductor surfaces. Both experimentalunderstanding of the oxide/semiconductor interface. The

  20. Direct observation of both contact and remote oxygen scavenging of GeO{sub 2} in a metal-oxide-semiconductor stack

    SciTech Connect (OSTI)

    Fadida, S., E-mail: sivanfa@tx.technion.ac.il; Shekhter, P.; Eizenberg, M. [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa (Israel); Cvetko, D. [Laboratorio TASC/IOM-CNR, Area di ricerca, Trieste (Italy); Department of Physics, Faculty of Mathematics and Physics, University of Ljubljana, Ljubljana (Slovenia); Floreano, L.; Verdini, A. [Laboratorio TASC/IOM-CNR, Area di ricerca, Trieste (Italy); Nyns, L.; Van Elshocht, S. [Imec, Kapeldreef 75, B-3001 Leuven (Belgium); Kymissis, I. [Department of Electrical Engineering, Columbia University, New York, New York 10027 (United States)

    2014-10-28T23:59:59.000Z

    In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al{sub 2}O{sub 3} layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

  1. Magnetization dynamics and spin diffusion in semiconductors and metals

    E-Print Network [OSTI]

    Cywi?ski, ?ukasz

    2007-01-01T23:59:59.000Z

    to (III,Mn)V ferromagnetic semiconductors . . . . . . . . .semiconductors . . . . . . . . . . . . . . . . . .Spin di?usion in semiconductors and metals: a general

  2. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect (OSTI)

    Szyszka, A., E-mail: szyszka@ihp-microelectronics.com, E-mail: adam.szyszka@pwr.wroc.pl [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Lupina, L.; Lupina, G.; Schubert, M. A.; Zaumseil, P. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Haeberlen, M.; Storck, P.; Thapa, S. B. [Siltronic, Hanns-Seidel-Platz 4, 81737 München (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus-Senftenberg, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

    2014-08-28T23:59:59.000Z

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  3. Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

    SciTech Connect (OSTI)

    Liu, Siyang; Zhang, Chunwei; Sun, Weifeng, E-mail: swffrog@seu.edu.cn [National ASIC System Engineering Research Center, Southeast University, Nanjing 210096 (China); Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu [CSMC Technologies Corporation, Wuxi 214061 (China)

    2014-04-14T23:59:59.000Z

    Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic.

  4. An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal–oxide–semiconductor integration

    SciTech Connect (OSTI)

    Roldán, A., E-mail: amroldan@ugr.es; Roldán, J. B. [Department of Electronics and Computer Technology, University of Granada (Spain); Reig, C. [Department of Electronic Engineering, University of Valencia (Spain); Cardoso, S. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); Instituto Superior Técnico (IST), Av. Rovisco Pais, 1000-029 Lisbon (Portugal); Cardoso, F. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); Ferreira, R. [International Iberian Nanotechnology Laboratory, Braga (Portugal); Freitas, P. P. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); International Iberian Nanotechnology Laboratory, Braga (Portugal)

    2014-05-07T23:59:59.000Z

    Full instrumentation bridges based on spin valve of giant magnetoresistance and magnetic tunnel junction devices have been microfabricated and experimentally characterized from the DC and noise viewpoint. A more realistic model of these devices was obtained in this work, an electrical and thermal model previously developed have been improved in such a way that noise effects are also included. We have implemented the model in a circuit simulator and reproduced the experimental measurements accurately. This provides a more realistic and complete tool for circuit design where magnetoresistive elements are combined with well-known complementary metal–oxide–semiconductor modules.

  5. Strained Sistrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor

    E-Print Network [OSTI]

    Strained SiÕstrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility By growing heterostructures that combine a surface strained Si layer with a buried strained Ge layer on Si0.5Ge0.5 , we have fabricated metal-oxide-semiconductor field-effect transistors with mobility

  6. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition...

  7. Metal oxide films on metal

    DOE Patents [OSTI]

    Wu, Xin D. (Los Alamos, NM); Tiwari, Prabhat (Los Alamos, NM)

    1995-01-01T23:59:59.000Z

    A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

  8. Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in. beta. -SiC thin films

    SciTech Connect (OSTI)

    Palmour, J.W.; Kong, H.S.; Davis, R.F.

    1988-08-15T23:59:59.000Z

    Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on ..beta..-SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (Al) p-type ..beta..-SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type ..beta..-SiC(111) thin films grown on the Si(0001) face of a 6H ..cap alpha..-SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperature up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion-mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.

  9. Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

    SciTech Connect (OSTI)

    Kim, SangHyeon, E-mail: dadembyora@mosfet.t.u-tokyo.ac.jp, E-mail: sh-kim@kist.re.kr; Yokoyama, Masafumi; Ikku, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko [Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan)

    2014-03-17T23:59:59.000Z

    In this paper, we fabricated asymmetrically tensile-strained In{sub 0.53}Ga{sub 0.47}As-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs) using a lateral strain relaxation technique. A stripe-like line structure, fabricated in biaxially strained In{sub 0.53}Ga{sub 0.47}As-OI can lead to the lateral strain relaxation and asymmetric strain configuration in In{sub 0.53}Ga{sub 0.47}As-OI with the channel width of 100?nm. We have found that the effective mobility (?{sub eff}) enhancement in In{sub 0.53}Ga{sub 0.47}As-OI MOSFETs with uniaxial-like asymmetric strain becomes smaller than that in In{sub 0.53}Ga{sub 0.47}As-OI MOSFETs with biaxial strain. We have clarified from a systematic analysis between the strain values and the ?{sub eff} characteristics that this mobility behavior can be understood by the change of the energy level of the conduction band minimum due to the lateral strain relaxation.

  10. Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO{sub 2} gate dielectrics

    SciTech Connect (OSTI)

    Samanta, Piyas, E-mail: piyas@vcfw.org [Department of Physics, Vidyasagar College for Women, 39 Sankar Ghosh Lane, Kolkata 700 006 (India); Huang, Heng-Sheng; Chen, Shuang-Yuan [Institute of Mechatronic Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan (China); Liu, Chuan-Hsi [Department of Mechatronic Technology, National Taiwan Normal University, No. 162, Sec. 1, He-Ping E. Rd., Taipei 106, Taiwan (China); Cheng, Li-Wei [Central R and D Division, United Microelectronics Corporation, No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan (China)

    2014-02-21T23:59:59.000Z

    We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO{sub 2} gate stack in n{sup +}-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric degradation is a composite effect of electron trapping in as-fabricated as well as newly generated neutral traps, resulting a significant amount of stress-induced leakage current and generation of surface states at the Si/SiO{sub 2} interface. Although, a significant amount of interface states are created during PBTS, the threshold voltage (V{sub T}) instability of the HfSiON based pMOS devices is primarily caused by electron trapping and detrapping. It is also shown that PBTS creates both acceptor- and donor-like interface traps via different depassivation mechanisms of the Si{sub 3}???SiH bonds at the Si/SiO{sub 2} interface in pMOS devices. However, the number of donor-like interface traps ?N{sub it}{sup D} is significantly greater than that of acceptor-like interface traps ?N{sup A}{sub it}, resulting the PBTS induced net interface traps as donor-like.

  11. Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10?nm devices

    SciTech Connect (OSTI)

    Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au; Jolley, G.; Umana-Membreno, G. A.; Antoszewski, J.; Faraone, L. [Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009 (Australia)

    2014-08-28T23:59:59.000Z

    Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10?nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10?nm regime.

  12. Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator MetalOxideSemiconductor Field-Effect-Transistors

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    ) and the back-gate oxide (tb) thickness is 2 nm. The doping in the p-type body and n+ source/drain regions­Oxide­Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential M. Jagadesh KUMAR Ã and G. Venkateshwar surface potential profile at the back gate of an asymmetrical double gate (DG) silicon-on-insulator (SOI

  13. L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

    SciTech Connect (OSTI)

    Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

    2014-04-21T23:59:59.000Z

    In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7?nm technology node and/or beyond.

  14. A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

    SciTech Connect (OSTI)

    Ettisserry, D. P., E-mail: deva@umd.edu; Goldsman, N. [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742 (United States); Lelis, A. [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)

    2014-03-14T23:59:59.000Z

    In this paper, we present a methodology for the identification and quantification of defects responsible for low channel mobility in 4H-Silicon Carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs). To achieve this, we use an algorithm based on 2D-device simulations of a power MOSFET, density functional simulations, and measurement data. Using physical modeling of carrier mobility and interface traps, we reproduce the experimental I-V characteristics of a 4H-SiC doubly implanted MOSFET through drift-diffusion simulation. We extract the position of Fermi level and the occupied trap density as a function of applied bias and temperature. Using these inputs, our algorithm estimates the number of possible trap types, their energy levels, and concentrations at 4H-SiC/SiO{sub 2} interface. Subsequently, we use density functional theory (DFT)-based ab initio simulations to identify the atomic make-up of defects causing these trap levels. We study silicon vacancy and carbon di-interstitial defects in the SiC side of the interface. Our algorithm indicates that the D{sub it} spectrum near the conduction band edge (3.25?eV) is composed of three trap types located at 2.8–2.85?eV, 3.05?eV, and 3.1–3.2?eV, and also calculates their densities. Based on DFT simulations, this work attributes the trap levels very close to the conduction band edge to the C di-interstitial defect.

  15. Sample size requirements for estimating effective dose from computed tomography using solid-state metal-oxide-semiconductor field-effect transistor dosimetry

    SciTech Connect (OSTI)

    Trattner, Sigal [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States)] [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States); Cheng, Bin [Department of Biostatistics, Columbia University Mailman School of Public Health, New York, New York 10032 (United States)] [Department of Biostatistics, Columbia University Mailman School of Public Health, New York, New York 10032 (United States); Pieniazek, Radoslaw L. [Center for Radiological Research, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States)] [Center for Radiological Research, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States); Hoffmann, Udo [Department of Radiology, Massachusetts General Hospital and Harvard Medical School, Boston, Massachusetts 02114 (United States)] [Department of Radiology, Massachusetts General Hospital and Harvard Medical School, Boston, Massachusetts 02114 (United States); Douglas, Pamela S. [Department of Medicine, Division of Cardiology, Duke University, Durham, North Carolina 27715 (United States)] [Department of Medicine, Division of Cardiology, Duke University, Durham, North Carolina 27715 (United States); Einstein, Andrew J., E-mail: andrew.einstein@columbia.edu [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York and Department of Radiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York (United States)

    2014-04-15T23:59:59.000Z

    Purpose: Effective dose (ED) is a widely used metric for comparing ionizing radiation burden between different imaging modalities, scanners, and scan protocols. In computed tomography (CT), ED can be estimated by performing scans on an anthropomorphic phantom in which metal-oxide-semiconductor field-effect transistor (MOSFET) solid-state dosimeters have been placed to enable organ dose measurements. Here a statistical framework is established to determine the sample size (number of scans) needed for estimating ED to a desired precision and confidence, for a particular scanner and scan protocol, subject to practical limitations. Methods: The statistical scheme involves solving equations which minimize the sample size required for estimating ED to desired precision and confidence. It is subject to a constrained variation of the estimated ED and solved using the Lagrange multiplier method. The scheme incorporates measurement variation introduced both by MOSFET calibration, and by variation in MOSFET readings between repeated CT scans. Sample size requirements are illustrated on cardiac, chest, and abdomen–pelvis CT scans performed on a 320-row scanner and chest CT performed on a 16-row scanner. Results: Sample sizes for estimating ED vary considerably between scanners and protocols. Sample size increases as the required precision or confidence is higher and also as the anticipated ED is lower. For example, for a helical chest protocol, for 95% confidence and 5% precision for the ED, 30 measurements are required on the 320-row scanner and 11 on the 16-row scanner when the anticipated ED is 4 mSv; these sample sizes are 5 and 2, respectively, when the anticipated ED is 10 mSv. Conclusions: Applying the suggested scheme, it was found that even at modest sample sizes, it is feasible to estimate ED with high precision and a high degree of confidence. As CT technology develops enabling ED to be lowered, more MOSFET measurements are needed to estimate ED with the same precision and confidence.

  16. Extracting metals directly from metal oxides

    DOE Patents [OSTI]

    Wai, C.M.; Smart, N.G.; Phelps, C.

    1997-02-25T23:59:59.000Z

    A method of extracting metals directly from metal oxides by exposing the oxide to a supercritical fluid solvent containing a chelating agent is described. Preferably, the metal is an actinide or a lanthanide. More preferably, the metal is uranium, thorium or plutonium. The chelating agent forms chelates that are soluble in the supercritical fluid, thereby allowing direct removal of the metal from the metal oxide. In preferred embodiments, the extraction solvent is supercritical carbon dioxide and the chelating agent is selected from the group consisting of {beta}-diketones, halogenated {beta}-diketones, phosphinic acids, halogenated phosphinic acids, carboxylic acids, halogenated carboxylic acids, and mixtures thereof. In especially preferred embodiments, at least one of the chelating agents is fluorinated. The method provides an environmentally benign process for removing metals from metal oxides without using acids or biologically harmful solvents. The chelate and supercritical fluid can be regenerated, and the metal recovered, to provide an economic, efficient process. 4 figs.

  17. Extracting metals directly from metal oxides

    DOE Patents [OSTI]

    Wai, Chien M. (Moscow, ID); Smart, Neil G. (Moscow, ID); Phelps, Cindy (Moscow, ID)

    1997-01-01T23:59:59.000Z

    A method of extracting metals directly from metal oxides by exposing the oxide to a supercritical fluid solvent containing a chelating agent is described. Preferably, the metal is an actinide or a lanthanide. More preferably, the metal is uranium, thorium or plutonium. The chelating agent forms chelates that are soluble in the supercritical fluid, thereby allowing direct removal of the metal from the metal oxide. In preferred embodiments, the extraction solvent is supercritical carbon dioxide and the chelating agent is selected from the group consisting of .beta.-diketones, halogenated .beta.-diketones, phosphinic acids, halogenated phosphinic acids, carboxylic acids, halogenated carboxylic acids, and mixtures thereof. In especially preferred embodiments, at least one of the chelating agents is fluorinated. The method provides an environmentally benign process for removing metals from metal oxides without using acids or biologically harmful solvents. The chelate and supercritical fluid can be regenerated, and the metal recovered, to provide an economic, efficient process.

  18. Lattice matched semiconductor growth on crystalline metallic substrates

    DOE Patents [OSTI]

    Norman, Andrew G; Ptak, Aaron J; McMahon, William E

    2013-11-05T23:59:59.000Z

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

  19. Band gap engineering at a semiconductor - crystalline oxide interface

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Moghadam, Jahangir-Moghadam; Shen, Xuan; Chrysler, Matthew; Ahmadi-Majlan, Kamyar; Su, Dong; Ngai, Joseph H.

    2015-03-01T23:59:59.000Z

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO? and Ge, in which the band gap of the former is enhanced with Zr content x. We presentmore »structural and electrical characterization of SrZrxTi1-xO?-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

  20. Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

    DOE Patents [OSTI]

    Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji Won; Rondinone, Adam J.; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

    2014-06-24T23:59:59.000Z

    The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

  1. A Low Temperature Fully Lithographic Process For Metal–Oxide Field-Effect Transistors

    E-Print Network [OSTI]

    Sodini, Charles G.

    We report a low temperature ( ~ 100à °C) lithographic method for fabricating hybrid metal oxide/organic field-effect transistors (FETs) that combine a zinc-indium-oxide (ZIO) semiconductor channel and organic, parylene, ...

  2. Electrochemical lithiation and delithiation for control of magnetic properties of nanoscale transition metal oxides

    E-Print Network [OSTI]

    Sivakumar, Vikram

    2008-01-01T23:59:59.000Z

    Transition metal oxides comprise a fascinating class of materials displaying a variety of magnetic and electronic properties, ranging from half-metallic ferromagnets like CrO2, ferrimagnetic semiconductors like Fey's, and ...

  3. Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force

    SciTech Connect (OSTI)

    Sakaike, Kohei; Akazawa, Muneki; Nakamura, Shogo [Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-3-1, Higashihiroshima, Hiroshima 739-8530 (Japan)] [Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-3-1, Higashihiroshima, Hiroshima 739-8530 (Japan); Higashi, Seiichiro [Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-3-1, Higashihiroshima, Hiroshima 739-8530 (Japan) [Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-3-1, Higashihiroshima, Hiroshima 739-8530 (Japan); Research Institute for Nanodevice and Bio Systems, Hiroshima University, Kagamiyama 1-4-2, Higashihiroshima, Hiroshima 739-8527 (Japan)

    2013-12-02T23:59:59.000Z

    A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a meniscus force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a meniscus force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 10{sup 8} and a high field-effect mobility of 609 cm{sup 2} V{sup ?1} s{sup ?1}.

  4. High-Temperature Thermoelectric Characterization of IIIV Semiconductor Thin Films by Oxide Bonding

    E-Print Network [OSTI]

    High-Temperature Thermoelectric Characterization of III­V Semiconductor Thin Films by Oxide Bonding and measurement method utilizing a SiO2­SiO2 covalent bonding technique is presented for high-temperature surface passivation, and metallization with a Ti-W-N diffusion barrier. A thermoelectric material, thin

  5. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

    SciTech Connect (OSTI)

    Dargis, Rytis, E-mail: dargis@translucentinc.com; Clark, Andrew; Erdem Arkun, Fevzi [Translucent, Inc., 952 Commercial St., Palo Alto, California 94303 (United States); Grinys, Tomas; Tomasiunas, Rolandas [Institute of Applied Research, Vilnius University, Sauletekio al. 10, LT-10223 Vilnius (Lithuania); O'Hara, Andy; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, 2515 Speedway, C1600, Austin, Texas 78712 (United States)

    2014-07-01T23:59:59.000Z

    Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

  6. Impact of GaN cap on charges in Al?O?/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

    SciTech Connect (OSTI)

    ?apajna, M., E-mail: milan.tapajna@savba.sk; Jurkovi?, M.; Válik, L.; Haš?ík, Š.; Gregušová, D.; Kuzmík, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Brunner, F.; Cho, E.-M. [Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Hashizume, T. [Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, 060-0814 Sapporo, Japan and JST-CREST, 102-0075 Tokyo (Japan)

    2014-09-14T23:59:59.000Z

    Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al?O?/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (?5–8?×?10¹²eV?¹?cm?²) was found at trap energies ranging from EC-0.5 to 1?eV for structure with GaN cap compared to that (D{sub it}???2–3?×?10¹²eV?¹?cm?²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV?¹?cm?²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about EC-0.6?eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al?O? thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

  7. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    DOE Patents [OSTI]

    Ren, Zhifeng (Newton, MA); Chen, Gang (Carlisle, MA); Poudel, Bed (West Newton, MA); Kumar, Shankar (Newton, MA); Wang, Wenzhong (Beijing, CN); Dresselhaus, Mildred (Arlington, MA)

    2009-09-08T23:59:59.000Z

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  8. Catalyzed Water Oxidation by Solar Irradiation of Band-Gap-Narrowed Semiconductors (Part 1. Overview).

    SciTech Connect (OSTI)

    Fujita,E.; Khalifah, P.; Lymar, S.; Muckerman, J.T.; Rodgriguez, J.

    2008-03-18T23:59:59.000Z

    The objectives of this report are: (1) Investigate the catalysis of water oxidation by cobalt and manganese hydrous oxides immobilized on titania or silica nanoparticles, and dinuclear metal complexes with quinonoid ligands in order to develop a better understanding of the critical water oxidation chemistry, and rationally search for improved catalysts. (2) Optimize the light-harvesting and charge-separation abilities of stable semiconductors including both a focused effort to improve the best existing materials by investigating their structural and electronic properties using a full suite of characterization tools, and a parallel effort to discover and characterize new materials. (3) Combine these elements to examine the function of oxidation catalysts on Band-Gap-Narrowed Semiconductor (BGNSC) surfaces and elucidate the core scientific challenges to the efficient coupling of the materials functions.

  9. Multiple percolation tunneling staircase in metal-semiconductor nanoparticle composites

    SciTech Connect (OSTI)

    Mukherjee, Rupam; Huang, Zhi-Feng; Nadgorny, Boris [Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201 (United States)

    2014-10-27T23:59:59.000Z

    Multiple percolation transitions are observed in a binary system of RuO{sub 2}-CaCu{sub 3}Ti{sub 4}O{sub 12} metal-semiconductor nanoparticle composites near percolation thresholds. Apart from a classical percolation transition, associated with the appearance of a continuous conductance path through RuO{sub 2} metal oxide nanoparticles, at least two additional tunneling percolation transitions are detected in this composite system. Such behavior is consistent with the recently emerged picture of a quantum conductivity staircase, which predicts several percolation tunneling thresholds in a system with a hierarchy of local tunneling conductance, due to various degrees of proximity of adjacent conducting particles distributed in an insulating matrix. Here, we investigate a different type of percolation tunneling staircase, associated with a more complex conductive and insulating particle microstructure of two types of non-spherical constituents. As tunneling is strongly temperature dependent, we use variable temperature measurements to emphasize the hierarchical nature of consecutive tunneling transitions. The critical exponents corresponding to specific tunneling percolation thresholds are found to be nonuniversal and temperature dependent.

  10. Metal oxide nanostructures with hierarchical morphology

    DOE Patents [OSTI]

    Ren, Zhifeng (Newton, MA); Lao, Jing Yu (Saline, MI); Banerjee, Debasish (Ann Arbor, MI)

    2007-11-13T23:59:59.000Z

    The present invention relates generally to metal oxide materials with varied symmetrical nanostructure morphologies. In particular, the present invention provides metal oxide materials comprising one or more metallic oxides with three-dimensionally ordered nanostructural morphologies, including hierarchical morphologies. The present invention also provides methods for producing such metal oxide materials.

  11. METAL OXIDE NANOPARTICLES

    SciTech Connect (OSTI)

    FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

    2007-10-01T23:59:59.000Z

    This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

  12. amorphous oxide semiconductor: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: alloy of composition correspond- ing to the metallic components of the superconduct- ing oxides respectivement. Abstract. - Previous quenching experiments on 2212...

  13. Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Donev, E. U.; Suh, J. Y.; Lopez, R.; Feldman, L. C.; Haglund, R. F.

    2008-01-01T23:59:59.000Z

    We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model.more »The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.« less

  14. Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

    SciTech Connect (OSTI)

    Shin, H. S. [Department of Electronics Engineering, Chungnam National University, Daejeon (Korea, Republic of) [Department of Electronics Engineering, Chungnam National University, Daejeon (Korea, Republic of); SEMATECH, 2706 Montopolis Dr., Austin, Texas 78741 (United States); The University of Texas, Austin, Texas 78758 (United States); Yum, J. H. [SEMATECH, 2706 Montopolis Dr., Austin, Texas 78741 (United States) [SEMATECH, 2706 Montopolis Dr., Austin, Texas 78741 (United States); The University of Texas, Austin, Texas 78758 (United States); Johnson, D. W. [SEMATECH, 2706 Montopolis Dr., Austin, Texas 78741 (United States) [SEMATECH, 2706 Montopolis Dr., Austin, Texas 78741 (United States); Texas A and M University College Station, Texas 77843 (United States); Harris, H. R. [Texas A and M University College Station, Texas 77843 (United States)] [Texas A and M University College Station, Texas 77843 (United States); Hudnall, Todd W. [Texas State University, 601 University Drive, San Marcos, Texas 78666 (United States)] [Texas State University, 601 University Drive, San Marcos, Texas 78666 (United States); Oh, J. [Yonsei University, Incheon, 406-840 (Korea, Republic of)] [Yonsei University, Incheon, 406-840 (Korea, Republic of); Kirsch, P.; Wang, W.-E. [SEMATECH, 2706 Montopolis Dr., Austin, Texas 78741 (United States)] [SEMATECH, 2706 Montopolis Dr., Austin, Texas 78741 (United States); Bielawski, C. W.; Banerjee, S. K.; Lee, J. C. [The University of Texas, Austin, Texas 78758 (United States)] [The University of Texas, Austin, Texas 78758 (United States); Lee, H. D. [Department of Electronics Engineering, Chungnam National University, Daejeon (Korea, Republic of)] [Department of Electronics Engineering, Chungnam National University, Daejeon (Korea, Republic of)

    2013-11-25T23:59:59.000Z

    In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.

  15. Metal-sensing layer-semiconductor and metal-sensing layer-metal heterostructure gas sensors

    SciTech Connect (OSTI)

    O'Leary, M.; Li, Zheng; Fonash, S.J.

    1987-01-01T23:59:59.000Z

    Extremely sensitive gas sensors can be fabricated using heterostructures of the form metal-sensing layer-semiconductor or metal-sensing layer-metal. These structures are heterostructure diodes which have the barrier controlling transport at least partially located in the sensing layer. In the presence of the gas species to be detected, the electrical properties of the sensing layer evolve, resulting in a modification of the barrier to electric current transport and, hence, resulting in detection due to changes in the current-voltage characteristics of the device. This type of sensor structure is demonstrated using the Pd/Ti-O/sub x/Ti heterostructure hydrogen detector.

  16. Lithium metal reduction of plutonium oxide to produce plutonium metal

    DOE Patents [OSTI]

    Coops, Melvin S. (Livermore, CA)

    1992-01-01T23:59:59.000Z

    A method is described for the chemical reduction of plutonium oxides to plutonium metal by the use of pure lithium metal. Lithium metal is used to reduce plutonium oxide to alpha plutonium metal (alpha-Pu). The lithium oxide by-product is reclaimed by sublimation and converted to the chloride salt, and after electrolysis, is removed as lithium metal. Zinc may be used as a solvent metal to improve thermodynamics of the reduction reaction at lower temperatures. Lithium metal reduction enables plutonium oxide reduction without the production of huge quantities of CaO--CaCl.sub.2 residues normally produced in conventional direct oxide reduction processes.

  17. Preparation of uniform nanoparticles of ultra-high purity metal oxides, mixed metal oxides, metals, and metal alloys

    DOE Patents [OSTI]

    Woodfield, Brian F.; Liu, Shengfeng; Boerio-Goates, Juliana; Liu, Qingyuan; Smith, Stacey Janel

    2012-07-03T23:59:59.000Z

    In preferred embodiments, metal nanoparticles, mixed-metal (alloy) nanoparticles, metal oxide nanoparticles and mixed-metal oxide nanoparticles are provided. According to embodiments, the nanoparticles may possess narrow size distributions and high purities. In certain preferred embodiments, methods of preparing metal nanoparticles, mixed-metal nanoparticles, metal oxide nanoparticles and mixed-metal nanoparticles are provided. These methods may provide tight control of particle size, size distribution, and oxidation state. Other preferred embodiments relate to a precursor material that may be used to form nanoparticles. In addition, products prepared from such nanoparticles are disclosed.

  18. NANO - "Green" metal oxides ... | ornl.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    "Green" metal oxides ... Water and nano-sized particles isolated from trees, plants and algae are the ingredients of a new recipe for low-cost metal oxides that are widely used in...

  19. Implications of mercury interactions with band-gap semiconductor oxides

    SciTech Connect (OSTI)

    Granite, E.J.; King, W.P.; Stanko, D.C.; Pennline, H.W.

    2008-09-01T23:59:59.000Z

    Titanium dioxide is a well-known photooxidation catalyst. It will oxidize mercury in the presence of ultraviolet light from the sun and oxygen and/or moisture to form mercuric oxide. Several companies manufacture self-cleaning windows. These windows have a transparent coating of titanium dioxide. The titanium dioxide is capable of destroying organic contaminants in air in the presence of ultraviolet light from the sun, thereby keeping the windows clean. The commercially available self-cleaning windows were used to sequester mercury from oxygen–nitrogen mixtures. Samples of the self-cleaning glass were placed into specially designed photo-reactors in order to study the removal of elemental mercury from oxygen–nitrogen mixtures resembling air. The possibility of removing mercury from ambient air with a self-cleaning glass apparatus is examined. The intensity of 365-nm ultraviolet light was similar to the natural intensity from sunlight in the Pittsburgh region. Passive removal of mercury from the air may represent an option in lieu of, or in addition to, point source clean-up at combustion facilities. There are several common band-gap semiconductor oxide photocatalysts. Sunlight (both the ultraviolet and visible light components) and band-gap semiconductor particles may have a small impact on the global cycle of mercury in the environment. The potential environmental consequences of mercury interactions with band-gap semiconductor oxides are discussed. Heterogeneous photooxidation might impact the global transport of elemental mercury emanating from flue gases.

  20. Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

    DOE Patents [OSTI]

    McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN); Chisholm, Matthew F. (Oak Ridge, TN)

    2000-01-01T23:59:59.000Z

    A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

  1. Fabrication and characterization of metal-semiconductor-metal nanorod using template synthesis

    SciTech Connect (OSTI)

    Kim, Kyohyeok; Kwon, Namyong; Hong, Junki; Chung, Ilsub [Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Sungkyunkwan University Advanced Institute of Nanotechnology and Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2009-07-15T23:59:59.000Z

    The authors attempted to fabricate and characterize one dimensional metal-semiconductor-metal (MSM) nanorod using a template. Cadmium selenide (CdSe) and polypyrrole (Ppy) were chosen as n-type and p-type semiconductor materials, respectively, whereas Au was chosen as a metal electrode. The fabrication of the nanorod was achieved by ''template synthesis'' method using polycarbonate membrane. The structure of the fabricated nanorod was analyzed using scanning electron microscopy and energy dispersive spectroscopy. In addition, the electrical properties of MSM nanorods were characterized using scanning probe microscopy (Seiko Instruments, SPA 300 HV) by probing with a conductive cantilever. I-V characteristics as a function of the temperature give the activation energy, as well as the barrier height of a metal-semiconductor contact, which is useful to understand the conduction mechanism of MSM nanorods.

  2. Conduction properties of metal/organic monolayer/semiconductor heterostructures

    SciTech Connect (OSTI)

    Li, D.; Bishop, A.; Gim, Y.; Shi, X.B.; Fitzsimmons, M.R.; Jia, Q.X. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    1998-11-01T23:59:59.000Z

    We have fabricated and characterized rectifying devices made of metal/organic monolayer/semiconductor heterostructures. The devices consist of an organic barrier layer sandwiched between an aluminum (Al) metal contact and a {ital p}-type Si semiconductor. The barrier materials were chosen from three types of self-assembled monolayers (SAMs) with different electronic properties: (1) wide-band gap poly(diallydimethyl ammonium) chloride (PDDA), (2) narrow-band gap PDDA/NiPc (nickel phthalocyanine tetrasulfonate), and (3) donor type PDDA/PPP (poly {ital p}-quaterphenylene-disulfonic-dicarboxylic acid). From current{endash}voltage (I{endash}V) measurements at room temperature, we have found the turn-on voltage of the devices can be tuned by varying the structure, hence electronic properties, of the organic monolayers, and that there exists a power-law dependence of {ital I} on V, I{proportional_to}V{sup {alpha}}, with the exponent {alpha}=2.2 for PDDA, 2.7 for PDDA/NiPc, and 1.44 for PDDA/PPP as the barrier layer, respectively. Our results imply that the transport properties are controlled by both the electronic properties of the SAMs and those of the metal and semiconductor, as indicated by the power-law dependence of the I{endash}V characteristics. {copyright} {ital 1998 American Institute of Physics.}

  3. Spectroscopic studies of metal growth on oxides

    E-Print Network [OSTI]

    Luo, Kai

    2000-01-01T23:59:59.000Z

    : Chemistry SPECTROSCOPIC STUDIES OF METAL GROWTH ON OXIDES A Thesis by KAI LUO Submitted to Texas A&M University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE Approved as to style a d content by: avid W. Goodman.... , Jilin University, P. R. China Chair of Advisory Committee: Dr, David W. Goodman Metal/oxide chemistry and metal cluster growth on oxides are fundamental to our understanding of the catalytic activity and selectivity of metal catalysts, thus...

  4. Nanostructured transition metal oxides useful for water oxidation catalysis

    DOE Patents [OSTI]

    Frei, Heinz M; Jiao, Feng

    2013-12-24T23:59:59.000Z

    The present invention provides for a composition comprising a nanostructured transition metal oxide capable of oxidizing two H.sub.2O molecules to obtain four protons. In some embodiments of the invention, the composition further comprises a porous matrix wherein the nanocluster of the transition metal oxide is embedded on and/or in the porous matrix.

  5. Method for producing metal oxide nanoparticles

    DOE Patents [OSTI]

    Phillips, Jonathan (Santa Fe, NM); Mendoza, Daniel (Santa Fe, NM); Chen, Chun-Ku (Albuquerque, NM)

    2008-04-15T23:59:59.000Z

    Method for producing metal oxide nanoparticles. The method includes generating an aerosol of solid metallic microparticles, generating plasma with a plasma hot zone at a temperature sufficiently high to vaporize the microparticles into metal vapor, and directing the aerosol into the hot zone of the plasma. The microparticles vaporize in the hot zone into metal vapor. The metal vapor is directed away from the hot zone and into the cooler plasma afterglow where it oxidizes, cools and condenses to form solid metal oxide nanoparticles.

  6. Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same

    DOE Patents [OSTI]

    Abraham, Marvin M. (Oak Ridge, TN); Chen, Yok (Oak Ridge, TN); Kernohan, Robert H. (Oak Ridge, TN)

    1981-01-01T23:59:59.000Z

    This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.

  7. Photocatalytic Oxidation of Aqueous Organic Contaminants by Semiconductors using Visible Light Radiation

    E-Print Network [OSTI]

    Meyers, Steven D.

    Photocatalytic Oxidation of Aqueous Organic Contaminants by Semiconductors using Visible Light semiconductor, InVO4, mechanically alloyed to TiO2, to shift photo-initiation into the visible range. 3, the ratio of semiconductors had no significant impact on the reaction rate. Long term goal - develop

  8. EEE 6397 Semiconductor Device Theory (Fall, 2014, 5th

    E-Print Network [OSTI]

    Fang, Yuguang "Michael"

    1 EEE 6397 Semiconductor Device Theory (Fall, 2014, 5th period MWF, BEN328) Goals: (1) Develop fundamental understanding on the device physics of the most important semiconductor devices, such as PN junctions, metal-semiconductor contacts, metal-oxide-semiconductor capacitors, and field-effect transistors

  9. Polarization dependence of the temporal response of metal-semiconductor-metal photodetectors

    E-Print Network [OSTI]

    Van Driel, Henry M.

    of MSM-PD effi- ciency when the electrode period ( ) is comparable to the wavelength of the incident-semiconductor-metal photodetector temporal response is shown to be significant, and largest for devices with electrode periods less insensitive devices require special electrode patterning7 or . When used as a polarization analyzer/ detector

  10. Reduction of Metal Oxide to Metal using Ionic Liquids

    SciTech Connect (OSTI)

    Dr. Ramana Reddy

    2012-04-12T23:59:59.000Z

    A novel pathway for the high efficiency production of metal from metal oxide means of electrolysis in ionic liquids at low temperature was investigated. The main emphasis was to eliminate the use of carbon and high temperature application in the reduction of metal oxides to metals. The emphasis of this research was to produce metals such as Zn, and Pb that are normally produced by the application of very high temperatures. The reduction of zinc oxide to zinc and lead oxide to lead were investigated. This study involved three steps in accomplishing the final goal of reduction of metal oxide to metal using ionic liquids: 1) Dissolution of metal oxide in an ionic liquid, 2) Determination of reduction potential using cyclic voltammetry (CV) and 3) Reduction of the dissolved metal oxide. Ionic liquids provide additional advantage by offering a wide potential range for the deposition. In each and every step of the process, more than one process variable has been examined. Experimental results for electrochemical extraction of Zn from ZnO and Pb from PbO using eutectic mixtures of Urea ((NH2)2CO) and Choline chloride (HOC2H4N(CH3)3+Cl-) or (ChCl) in a molar ratio 2:1, varying voltage and temperatures were carried out. Fourier Transform Infra-Red (FTIR) spectroscopy studies of ionic liquids with and without metal oxide additions were conducted. FTIR and induction coupled plasma spectroscopy (ICPS) was used in the characterization of the metal oxide dissolved ionic liquid. Electrochemical experiments were conducted using EG&G potentiostat/galvanostat with three electrode cell systems. Cyclic voltammetry was used in the determination of reduction potentials for the deposition of metals. Chronoamperometric experiments were carried out in the potential range of -0.6V to -1.9V for lead and -1.4V to -1.9V for zinc. The deposits were characterized using XRD and SEM-EDS for phase, morphological and elemental analysis. The results showed that pure metal was deposited on the cathode. Successful extraction of metal from metal oxide dissolved in Urea/ChCl (2:1) was accomplished. The current efficiencies were relatively high in both the metal deposition processes with current efficiency greater than 86% for lead and 95% for zinc. This technology will advance the metal oxide reduction process by increasing the process efficiency and also eliminate the production of CO2 which makes this an environmentally benign technology for metal extraction.

  11. Nanocomposite of graphene and metal oxide materials

    DOE Patents [OSTI]

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2013-10-15T23:59:59.000Z

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10 C.

  12. Nanocomposite of graphene and metal oxide materials

    DOE Patents [OSTI]

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2012-09-04T23:59:59.000Z

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10C.

  13. Methods of producing adsorption media including a metal oxide

    DOE Patents [OSTI]

    Mann, Nicholas R; Tranter, Troy J

    2014-03-04T23:59:59.000Z

    Methods of producing a metal oxide are disclosed. The method comprises dissolving a metal salt in a reaction solvent to form a metal salt/reaction solvent solution. The metal salt is converted to a metal oxide and a caustic solution is added to the metal oxide/reaction solvent solution to adjust the pH of the metal oxide/reaction solvent solution to less than approximately 7.0. The metal oxide is precipitated and recovered. A method of producing adsorption media including the metal oxide is also disclosed, as is a precursor of an active component including particles of a metal oxide.

  14. Method of producing adherent metal oxide coatings on metallic surfaces

    DOE Patents [OSTI]

    Lane, Michael H. (Clifton Park, NY); Varrin, Jr., Robert D. (McLean, VA)

    2001-01-01T23:59:59.000Z

    Provided is a process of producing an adherent synthetic corrosion product (sludge) coating on metallic surfaces. The method involves a chemical reaction between a dry solid powder mixture of at least one reactive metal oxide with orthophosphoric acid to produce a coating in which the particles are bound together and the matrix is adherent to the metallic surface.

  15. Three-Electrode Metal Oxide Reduction Cell

    DOE Patents [OSTI]

    Dees, Dennis W. (Downers Grove, IL); Ackerman, John P. (Downers Grove, IL)

    2005-06-28T23:59:59.000Z

    A method of electrochemically reducing a metal oxide to the metal in an electrochemical cell is disclosed along with the cell. Each of the anode and cathode operate at their respective maximum reaction rates. An electrolyte and an anode at which oxygen can be evolved, and a cathode including a metal oxide to be reduced are included as is a third electrode with independent power supplies connecting the anode and the third electrode and the cathode and the third electrode.

  16. Three-electrode metal oxide reduction cell

    DOE Patents [OSTI]

    Dees, Dennis W. (Downers Groves, IL); Ackerman, John P. (Downers Grove, IL)

    2008-08-12T23:59:59.000Z

    A method of electrochemically reducing a metal oxide to the metal in an electrochemical cell is disclosed along with the cell. Each of the anode and cathode operate at their respective maximum reaction rates. An electrolyte and an anode at which oxygen can be evolved, and a cathode including a metal oxide to be reduced are included as is a third electrode with independent power supplies connecting the anode and the third electrode and the cathode and the third electrode.

  17. Method for making monolithic metal oxide aerogels

    DOE Patents [OSTI]

    Droege, M.W.; Coronado, P.R.; Hair, L.M.

    1995-03-07T23:59:59.000Z

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The present invention is especially advantageous for making metal oxides other than silica that are prone to forming opaque, cracked aerogels. 6 figs.

  18. Method for making monolithic metal oxide aerogels

    DOE Patents [OSTI]

    Droege, Michael W. (Livermore, CA); Coronado, Paul R. (Livermore, CA); Hair, Lucy M. (Livermore, CA)

    1995-01-01T23:59:59.000Z

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The present invention is especially advantageous for making metal oxides other than silica that are prone to forming opaque, cracked aerogels.

  19. Direct electrochemical reduction of metal-oxides

    DOE Patents [OSTI]

    Redey, Laszlo I. (Downers Grove, IL); Gourishankar, Karthick (Downers Grove, IL)

    2003-01-01T23:59:59.000Z

    A method of controlling the direct electrolytic reduction of a metal oxide or mixtures of metal oxides to the corresponding metal or metals. A non-consumable anode and a cathode and a salt electrolyte with a first reference electrode near the non-consumable anode and a second reference electrode near the cathode are used. Oxygen gas is produced and removed from the cell. The anode potential is compared to the first reference electrode to prevent anode dissolution and gas evolution other than oxygen, and the cathode potential is compared to the second reference electrode to prevent production of reductant metal from ions in the electrolyte.

  20. Nanocomposite of graphene and metal oxide materials | OSTI, US...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanocomposite of graphene and metal oxide materials Re-direct Destination: Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The...

  1. Monolithic Metal Oxide based Composite Nanowire Lean NOx Emission...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Monolithic Metal Oxide based Composite Nanowire Lean NOx Emission Control Catalysts Monolithic Metal Oxide based Composite Nanowire Lean NOx Emission Control Catalysts Presents...

  2. Structure and magnetism of transition-metal implanted dilute magnetic semiconductors

    E-Print Network [OSTI]

    Pereira, Lino; Temst, K; Araújo, JP; Wahl, U

    The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics. Among the many types of DMS materials which have been investigated, the current research interest can be narrowed down to two main classes of materials: (1) narrow-gap III-V semiconductors, mostly GaAs and InAs, doped with Mn; (2) wide-gap oxides and nitrides doped with 3d transition metals, mostly Mn- and Co-doped ZnO and Mn-doped GaN. With a number of interesting functionalities deriving from the carrier-mediated ferromagnetism and demonstrated in various proof-of-concept devices, Mn-doped GaAs has become, among DMS materials, one of the best candidates for technological application. However, despite major developments over the last 15 years, the maximum Curie temperature (185 K) remains well below room temperature. On the other hand, wide-gap DMS materials appear to exhibit ferromagnetic behavior...

  3. Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters

    SciTech Connect (OSTI)

    Lee, Kyu-Tae; Seo, Sungyong; Yong Lee, Jae; Jay Guo, L., E-mail: guo@umich.edu [Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-06-09T23:59:59.000Z

    We present transmission visible wavelength filters based on strong interference behaviors in an ultrathin semiconductor material between two metal layers. The proposed devices were fabricated on 2?cm?×?2?cm glass substrate, and the transmission characteristics show good agreement with the design. Due to a significantly reduced light propagation phase change associated with the ultrathin semiconductor layer and the compensation in phase shift of light reflecting from the metal surface, the filters show an angle insensitive performance up to ±70°, thus, addressing one of the key challenges facing the previously reported photonic and plasmonic color filters. This principle, described in this paper, can have potential for diverse applications ranging from color display devices to the image sensors.

  4. High surface area, electrically conductive nanocarbon-supported metal oxide

    DOE Patents [OSTI]

    Worsley, Marcus A; Han, Thomas Yong-Jin; Kuntz, Joshua D; Cervanted, Octavio; Gash, Alexander E; Baumann, Theodore F; Satcher, Jr., Joe H

    2014-03-04T23:59:59.000Z

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust.

  5. Synthesis and characterization of nanostructured transition metal oxides for energy storage devices

    E-Print Network [OSTI]

    Kim, Jong Woung

    2012-01-01T23:59:59.000Z

    nanostructured transition metal oxides for energy storage devicesnanostructured transition metal oxides for energy storage devices

  6. Lithium metal oxide electrodes for lithium batteries

    DOE Patents [OSTI]

    Thackeray, Michael M. (Naperville, IL); Kim, Jeom-Soo (Naperville, IL); Johnson, Christopher S. (Naperville, IL)

    2008-01-01T23:59:59.000Z

    An uncycled electrode for a non-aqueous lithium electrochemical cell including a lithium metal oxide having the formula Li.sub.(2+2x)/(2+x)M'.sub.2x/(2+x)M.sub.(2-2x)/(2+x)O.sub.2-.delta., in which 0.ltoreq.x<1 and .delta. is less than 0.2, and in which M is a non-lithium metal ion with an average trivalent oxidation state selected from two or more of the first row transition metals or lighter metal elements in the periodic table, and M' is one or more ions with an average tetravalent oxidation state selected from the first and second row transition metal elements and Sn. Methods of preconditioning the electrodes are disclosed as are electrochemical cells and batteries containing the electrodes.

  7. Process for etching mixed metal oxides

    DOE Patents [OSTI]

    Ashby, C.I.H.; Ginley, D.S.

    1994-10-18T23:59:59.000Z

    An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

  8. Process for etching mixed metal oxides

    DOE Patents [OSTI]

    Ashby, Carol I. H. (Edgewood, NM); Ginley, David S. (Evergreen, CO)

    1994-01-01T23:59:59.000Z

    An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

  9. Mesoscopic pointlike defects in semiconductors: Deep-level energies D. D. Nolte

    E-Print Network [OSTI]

    Nolte, David D.

    -semiconductor heterostructures to include metal-semiconductor,1 insulator-semiconductor, and superconductor-semiconductor

  10. Lattice mismatched compound semiconductors and devices on silicon

    E-Print Network [OSTI]

    Yang, Li, Ph. D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and ...

  11. Method for making monolithic metal oxide aerogels

    SciTech Connect (OSTI)

    Coronado, Paul R. (Livermore, CA)

    1999-01-01T23:59:59.000Z

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The containment vessel is enclosed within an aqueous atmosphere that is above the supercritical temperature and pressure of the solvent of the metal alkoxide solution.

  12. Self-Assembled Metal/Molecule/Semiconductor Nanostructures for Electronic Device

    E-Print Network [OSTI]

    Woodall, Jerry M.

    565 Self-Assembled Metal/Molecule/Semiconductor Nanostructures for Electronic Device and Contact attracted interest for electronic device and ma- terials applications. The first class involves the for-assembled semiconductor structures, the electronic device functionality has been limited by the difficulty in achieving

  13. Superatoms and Metal-Semiconductor Motifs for Cluster Materials

    SciTech Connect (OSTI)

    Castleman, A. W.

    2013-10-11T23:59:59.000Z

    A molecular understanding of catalysis and catalytically active materials is of fundamental importance in designing new substances for applications in energy and fuels. We have performed reactivity studies and ultrafast ionization and coulomb explosion studies on a variety of catalytically-relevant materials, including transition metal oxides of Fe, Co, Ni, Cu, Ti, V, Nb, and Ta. We demonstrate that differences in charge state, geometry, and elemental composition of clusters of such materials determine chemical reactivity and ionization behavior, crucial steps in improving performance of catalysts.

  14. PLUTONIUM METAL: OXIDATION CONSIDERATIONS AND APPROACH

    SciTech Connect (OSTI)

    Estochen, E.

    2013-03-20T23:59:59.000Z

    Plutonium is arguably the most unique of all metals when considered in the combined context of metallurgical, chemical, and nuclear behavior. Much of the research in understanding behavior and characteristics of plutonium materials has its genesis in work associated with nuclear weapons systems. However, with the advent of applications in fuel materials, the focus in plutonium science has been more towards nuclear fuel applications, as well as long term storage and disposition. The focus of discussion included herein is related to preparing plutonium materials to meet goals consistent with non-proliferation. More specifically, the emphasis is on the treatment of legacy plutonium, in primarily metallic form, and safe handling, packaging, and transport to meet non-proliferation goals of safe/secure storage. Elevated temperature oxidation of plutonium metal is the treatment of choice, due to extensive experiential data related to the method, as the oxide form of plutonium is one of only a few compounds that is relatively simple to produce, and stable over a large temperature range. Despite the simplicity of the steps required to oxidize plutonium metal, it is important to understand the behavior of plutonium to ensure that oxidation is conducted in a safe and effective manner. It is important to understand the effect of changes in environmental variables on the oxidation characteristics of plutonium. The primary purpose of this report is to present a brief summary of information related to plutonium metal attributes, behavior, methods for conversion to oxide, and the ancillary considerations related to processing and facility safety. The information provided is based on data available in the public domain and from experience in oxidation of such materials at various facilities in the United States. The report is provided as a general reference for implementation of a simple and safe plutonium metal oxidation technique.

  15. Lithium metal oxide electrodes for lithium batteries

    DOE Patents [OSTI]

    Thackeray, Michael M.; Johnson, Christopher S.; Amine, Khalil; Kang, Sun-Ho

    2010-06-08T23:59:59.000Z

    An uncycled preconditioned electrode for a non-aqueous lithium electrochemical cell including a lithium metal oxide having the formula xLi.sub.2-yH.sub.yO.xM'O.sub.2.(1-x)Li.sub.1-zH.sub.zMO.sub.2 in which 0metal ion with an average trivalent oxidation state selected from two or more of the first row transition metals or lighter metal elements in the periodic table, and M' is one or more ions with an average tetravalent oxidation state selected from the first and second row transition metal elements and Sn. The xLi.sub.2-yH.sub.y.xM'O.sub.2.(1-x)Li.sub.1-zH.sub.zMO.sub.2 material is prepared by preconditioning a precursor lithium metal oxide (i.e., xLi.sub.2M'O.sub.3.(1-x)LiMO.sub.2) with a proton-containing medium with a pH<7.0 containing an inorganic acid. Methods of preparing the electrodes are disclosed, as are electrochemical cells and batteries containing the electrodes.

  16. Toward Photochemical Water Splitting Using Band-Gap-Narrowed Semiconductors and Transition-Metal Based Molecular Catalysts

    SciTech Connect (OSTI)

    Muckerman,J.T.; Rodriguez, J.A.; Fujita, E.

    2009-06-07T23:59:59.000Z

    We are carrying out coordinated theoretical and experimental studies of toward photochemical water splitting using band-gap-narrowed semiconductors (BGNSCs) with attached multi-electron molecular water oxidation and hydrogen production catalysts. We focus on the coupling between the materials properties and the H{sub 2}O redox chemistry, with an emphasis on attaining a fundamental understanding of the individual elementary steps in the following four processes: (1) Light-harvesting and charge-separation of stable oxide or oxide-derived semiconductors for solar-driven water splitting, including the discovery and characterization of the behavior of such materials at the aqueous interface; (2) The catalysis of the four-electron water oxidation by dinuclear hydroxo transition-metal complexes with quinonoid ligands, and the rational search for improved catalysts; (3) Transfer of the design principles learned from the elucidation of the DuBois-type hydrogenase model catalysts in acetonitrile to the rational design of two-electron hydrogen production catalysts for aqueous solution; (4) Combining these three elements to examine the function of oxidation catalysts on BGNSC photoanode surfaces and hydrogen production catalysts on cathode surfaces at the aqueous interface to understand the challenges to the efficient coupling of the materials functions.

  17. Reduction of metal oxides through mechanochemical processing

    DOE Patents [OSTI]

    Froes, Francis H. (Moscow, ID); Eranezhuth, Baburaj G. (Moscow, ID); Senkov, Oleg N. (Moscow, ID)

    2000-01-01T23:59:59.000Z

    The low temperature reduction of a metal oxide using mechanochemical processing techniques. The reduction reactions are induced mechanically by milling the reactants. In one embodiment of the invention, titanium oxide TiO.sub.2 is milled with CaH.sub.2 to produce TiH.sub.2. Low temperature heat treating, in the range of 400.degree. C. to 700.degree. C., can be used to remove the hydrogen in the titanium hydride.

  18. Metal-insulator-semiconductor structures on p-type GaAs with low interface state density

    E-Print Network [OSTI]

    Chen, Zhi

    Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

  19. Metal sulfide initiators for metal oxide sorbent regeneration

    DOE Patents [OSTI]

    Turk, B.S.; Gupta, R.P.

    1999-06-22T23:59:59.000Z

    A process of regenerating a sulfided sorbent is provided. According to the process of the invention, a substantial portion of the energy necessary to initiate the regeneration reaction is provided by the combustion of a particulate metal sulfide additive. In using the particulate metal sulfide additive, the oxygen-containing gas used to regenerate the sulfided sorbent can be fed to the regeneration zone without heating or at a lower temperature than used in conventional processes wherein the regeneration reaction is initiated only by heating the oxygen-containing gas. The particulate metal sulfide additive is preferably an inexpensive mineral ore such as iron pyrite which does not adversely affect the regeneration or corresponding desulfurization reactions. The invention further includes a sorbent composition comprising the particulate metal sulfide additive in admixture with an active metal oxide sorbent capable of removing one or more sulfur compounds from a sulfur-containing gas stream. 1 fig.

  20. Pressure-Induced Electronic Phase Transitions Transition Metal Oxides and Rare Earth Metals

    E-Print Network [OSTI]

    Islam, M. Saif

    Pressure-Induced Electronic Phase Transitions in Transition Metal Oxides and Rare Earth Metals Metal Oxides and Rare Earth Metals by Brian Ross Maddox Electron correlation can affect profound changes transition in a transition metal monoxide. iv #12;The lanthanides (the 4f metals also known as rare-earths

  1. Coherent ExcitonSurface-Plasmon-Polariton Interaction in Hybrid Metal-Semiconductor Nanostructures

    E-Print Network [OSTI]

    Oldenburg, Carl von Ossietzky Universität

    Coherent Exciton­Surface-Plasmon-Polariton Interaction in Hybrid Metal-Semiconductor Nanostructures 2008; published 8 September 2008) We report measurements of a coherent coupling between surface plasmon when placed close to a metallic nanostructure due to its coupling to surface plasmon polaritons (SPPs

  2. Metal-supported solid oxide fuel cells

    SciTech Connect (OSTI)

    Villarreal, I.; Jacobson, C.; Leming, A.; Matus, Y.; Visco, S.; De Jonghe, L.

    2003-01-07T23:59:59.000Z

    Low cost, colloidal deposition methods have been utilized to produce novel solid oxide fuel cell structures on metal alloy support electrodes. YSZ films were deposited on iron-chrome supports on top of a thin Ni/YSZ catalytic layer, and sintered at 1350 degrees C, in a reducing atmosphere. Dense, 20??m YSZ electrolyte films were obtained on highly porous stainless steel substrates.

  3. Reactor process using metal oxide ceramic membranes

    DOE Patents [OSTI]

    Anderson, M.A.

    1994-05-03T23:59:59.000Z

    A reaction vessel for use in photoelectrochemical reactions includes as its reactive surface a metal oxide porous ceramic membrane of a catalytic metal such as titanium. The reaction vessel includes a light source and a counter electrode. A provision for applying an electrical bias between the membrane and the counter electrode permits the Fermi levels of potential reaction to be favored so that certain reactions may be favored in the vessel. The electrical biasing is also useful for the cleaning of the catalytic membrane. Also disclosed is a method regenerating a porous metal oxide ceramic membrane used in a photoelectrochemical catalytic process by periodically removing the reactants and regenerating the membrane using a variety of chemical, thermal, and electrical techniques. 2 figures.

  4. Method for producing nanostructured metal-oxides

    DOE Patents [OSTI]

    Tillotson, Thomas M.; Simpson, Randall L.; Hrubesh, Lawrence W.; Gash, Alexander

    2006-01-17T23:59:59.000Z

    A synthetic route for producing nanostructure metal-oxide-based materials using sol-gel processing. This procedure employs the use of stable and inexpensive hydrated-metal inorganic salts and environmentally friendly solvents such as water and ethanol. The synthesis involves the dissolution of the metal salt in a solvent followed by the addition of a proton scavenger, which induces gel formation in a timely manner. Both critical point (supercritical extraction) and atmospheric (low temperature evaporation) drying may be employed to produce monolithic aerogels and xerogels, respectively. Using this method synthesis of metal-oxide nanostructured materials have been carried out using inorganic salts, such as of Fe3+, Cr3+, Al3+, Ga3+, In3+, Hf4+, Sn4+, Zr4+, Nb5+, W6+, Pr3+, Er3+, Nd3+, Ce3+, U3+ and Y3+. The process is general and nanostructured metal-oxides from the following elements of the periodic table can be made: Groups 2 through 13, part of Group 14 (germanium, tin, lead), part of Group 15 (antimony, bismuth), part of Group 16 (polonium), and the lanthanides and actinides. The sol-gel processing allows for the addition of insoluble materials (e.g., metals or polymers) to the viscous sol, just before gelation, to produce a uniformly distributed nanocomposites upon gelation. As an example, energetic nanocomposites of FexOy gel with distributed Al metal are readily made. The compositions are stable, safe, and can be readily ignited to thermitic reaction.

  5. Thermal barrier and overlay coating systems comprising composite metal/metal oxide bond coating layers

    DOE Patents [OSTI]

    Goedjen, John G. (Oviedo, FL); Sabol, Stephen M. (Orlando, FL); Sloan, Kelly M. (Longwood, FL); Vance, Steven J. (Orlando, FL)

    2001-01-01T23:59:59.000Z

    The present invention generally describes multilayer coating systems comprising a composite metal/metal oxide bond coat layer. The coating systems may be used in gas turbines.

  6. Metal oxide and metal fluoride nanostructures and methods of making same

    DOE Patents [OSTI]

    Wong, Stanislaus S. (Stony Brook, NY); Mao, Yuanbing (Los Angeles, CA)

    2009-08-18T23:59:59.000Z

    The present invention includes pure single-crystalline metal oxide and metal fluoride nanostructures, and methods of making same. These nanostructures include nanorods and nanoarrays.

  7. Hydrous metal oxide catalysts for oxidation of hydrocarbons

    SciTech Connect (OSTI)

    Miller, J.E.; Dosch, R.G.; McLaughlin, L.I. [Sandia National Labs., Albuquerque, NM (United States). Process Research Dept.

    1993-07-01T23:59:59.000Z

    This report describes work performed at Sandia under a CRADA with Shell Development of Houston, Texas aimed at developing hydrous metal oxide (HMO) catalysts for oxidation of hydrocarbons. Autoxidation as well as selective oxidation of 1-octene was studied in the presence of HMO catalysts based on known oxidation catalysts. The desired reactions were the conversion of olefin to epoxides, alcohols, and ketones, HMOs seem to inhibit autoxidation reactions, perhaps by reacting with peroxides or radicals. Attempts to use HMOs and metal loaded HMOs as epoxidation catalysts were unsuccessful, although their utility for this reaction was not entirely ruled out. Likewise, alcohol formation from olefins in the presence of HMO catalysts was not achieved. However, this work led to the discovery that acidified HMOs can lead to carbocation reactions of hydrocarbons such as cracking. An HMO catalyst containing Rh and Cu that promotes the reaction of {alpha}-olefins with oxygen to form methyl ketones was identified. Although the activity of the catalyst is relatively low and isomerization reactions of the olefin simultaneously occur, results indicate that these problems may be addressed by eliminating mass transfer limitations. Other suggestions for improving the catalyst are also made. 57 refs.

  8. Versatile Applications of Nanostructured Metal Oxides

    E-Print Network [OSTI]

    Li, Li

    2014-05-29T23:59:59.000Z

    and technological fields, in- cluding catalysis, sensors, energy devices (batteries, solar cells and fuel cells), optics and biomedicine.[11] Nanoporous metal oxides have therefore gained tremendous in- terest during the past decades. They show greatly improved... 1998, 396, 152. [4] S. Guldin, S. Hüttner, M. Kolle, M. E. Welland, P. Müller-Buschbaum, R. H. Friend, U. Steiner, N. Tétreault, Dye-sensitized solar cell based on a three- dimensional photonic crystal, Nano Lett. 2010, 10, 2303. [5] R. L. Puurunen...

  9. Method for producing metal oxide aerogels

    SciTech Connect (OSTI)

    Tillotson, Thomas M. (Tracy, CA); Poco, John F. (Livermore, CA); Hrubesh, Lawrence W. (Pleasanton, CA); Thomas, Ian M. (Livermore, CA)

    1995-01-01T23:59:59.000Z

    A two-step hydrolysis-condensation method was developed to form metal oxide aerogels of any density, including densities of less than 0.003g/cm.sup.3 and greater than 0.27g/cm.sup.3. High purity metal alkoxide is reacted with water, alcohol solvent, and an additive to form a partially condensed metal intermediate. All solvent and reaction-generated alcohol is removed, and the intermediate is diluted with a nonalcoholic solvent. The intermediate can be stored for future use to make aerogels of any density. The aerogels are formed by reacting the intermediate with water, nonalcoholic solvent, and a catalyst, and extracting the nonalcoholic solvent directly. The resulting monolithic aerogels are hydrophobic and stable under atmospheric conditions, and exhibit good optical transparency, high clarity, and homogeneity. The aerogels have high thermal insulation capacity, high porosity, mechanical strength and stability, and require shorter gelation times than aerogels formed by conventional methods.

  10. Method for producing metal oxide aerogels

    SciTech Connect (OSTI)

    Tillotson, T.M.; Poco, J.F.; Hrubesh, L.W.; Thomas, I.M.

    1995-04-25T23:59:59.000Z

    A two-step hydrolysis-condensation method was developed to form metal oxide aerogels of any density, including densities of less than 0.003g/cm{sup 3} and greater than 0.27g/cm{sup 3}. High purity metal alkoxide is reacted with water, alcohol solvent, and an additive to form a partially condensed metal intermediate. All solvent and reaction-generated alcohol is removed, and the intermediate is diluted with a nonalcoholic solvent. The intermediate can be stored for future use to make aerogels of any density. The aerogels are formed by reacting the intermediate with water, nonalcoholic solvent, and a catalyst, and extracting the nonalcoholic solvent directly. The resulting monolithic aerogels are hydrophobic and stable under atmospheric conditions, and exhibit good optical transparency, high clarity, and homogeneity. The aerogels have high thermal insulation capacity, high porosity, mechanical strength and stability, and require shorter gelation times than aerogels formed by conventional methods. 8 figs.

  11. Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

    E-Print Network [OSTI]

    Pereira, LMC; Wahl, U

    Scientic findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last few ...

  12. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

    DOE Patents [OSTI]

    Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palto Alto, CA)

    2002-01-01T23:59:59.000Z

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  13. Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    , and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, University of South Carolina, Columbia, South Carolina 29208 Received 22 January 2001; accepted American Institute of Physics. DOI: 10.1063/1.1372364 I. INTRODUCTION A recent report on GaN highly doped

  14. Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

    DOE Patents [OSTI]

    Warren, W.L.; Vanheusden, K.J.R.; Schwank, J.R.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.

    1998-07-28T23:59:59.000Z

    A method is disclosed for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer. 5 figs.

  15. Nonadiabatic electron transfer at the nanoscale tin-oxide semiconductor/aqueous solution interface

    E-Print Network [OSTI]

    published as an Advance Article on the web 28th January 2004 Photo-excitation of chromophoric metal forward and back electron transfer reactions involving molecular dyes and wide bandgap semiconductors words, electro- nic coupling rather than nuclear motion appears to govern the reaction dynamics

  16. High temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding

    E-Print Network [OSTI]

    Bowers, John

    bonding Je-Hyeong Bahka) , Gehong Zenga) , Joshua M. O. Zide b) , Hong Luc) , Rajeev Singhd) , Di Lianga bonding technique is developed for high temperature thermoelectric characterization of the thin film III-W-N diffusion barrier. A thermoelectric material, thin film ErAs:InGaAlAs metal/semiconductor nanocomposite

  17. Polymer-assisted aqueous deposition of metal oxide films

    DOE Patents [OSTI]

    Li, DeQuan (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM)

    2003-07-08T23:59:59.000Z

    An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

  18. Slag Metal Reactions in Binary CaF2-Metal Oxide Welding Fluxes

    E-Print Network [OSTI]

    Eagar, Thomas W.

    ) Slag Metal Reactions in Binary CaF2-Metal Oxide Welding Fluxes Some otherwise chemically stable fluxes may decompose into suboxides in the presence of welding arcs, thereby providing higher levels of 0 2 in weld metal than those oxides which do not form suboxides ABSTRACT. The stability of metal

  19. Transition metal oxide improves overall efficiency and maintains performance with inexpensive metals.

    E-Print Network [OSTI]

    Transition metal oxide improves overall efficiency and maintains performance with inexpensive that inserting a transition metal oxide (TMO) between the lead sulfide (PbS) quantum dot (QD) layer and the metal-Yu Chen; Octavi E. Semonin; Arthur J. Nozik; Randy J. Ellingson; Matthew C. Beard."n-Type Transition Metal

  20. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, C.H.; Evans, J.T. Jr.

    1998-11-24T23:59:59.000Z

    A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

  1. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, Carleton H. (1304 Onava Ct., NE., Albuquerque, NM 87112); Evans, Jr., Joseph Tate (13609 Verbena Pl., NE., Albuquerque, NM 87112)

    1998-01-01T23:59:59.000Z

    A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

  2. Near room temperature lithographically processed metal-oxide transistors

    E-Print Network [OSTI]

    Tang, Hui, M. Eng. Massachusetts Institute of Technology

    2008-01-01T23:59:59.000Z

    A fully lithographic process at near-room-temperature was developed for the purpose of fabricating transistors based on metal-oxide channel materials. The combination of indium tin oxide (ITO) as the source/drain electrodes, ...

  3. Surface Oxidation and Dissolution of Metal Nanocatalysts in Acid Medium 

    E-Print Network [OSTI]

    Callejas-Tovar, Juan

    2012-10-19T23:59:59.000Z

    the main features of the oxidation phenomena observed experimentally, it is concluded that the dissolution mechanism of metal atoms involves: 1) Surface segregation of alloy atoms, 2) oxygen absorption into the subsurface of the catalyst, and 3) metal...

  4. Method of producing solution-derived metal oxide thin films

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM); Ingersoll, David (Albuquerque, NM)

    2000-01-01T23:59:59.000Z

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  5. Hydrogen in semiconductors and insulators

    E-Print Network [OSTI]

    Van de Walle, Chris G.

    2007-01-01T23:59:59.000Z

    level in two different semiconductors, illustrating the06-01999R1 Hydrogen in semiconductors and insulators SpecialA. oxide materials; A. semiconductors; C. electronic

  6. Solder for oxide layer-building metals and alloys

    DOE Patents [OSTI]

    Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

    1992-01-01T23:59:59.000Z

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  7. Solder for oxide layer-building metals and alloys

    DOE Patents [OSTI]

    Kronberg, J.W.

    1992-09-15T23:59:59.000Z

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  8. Oxidized film structure and method of making epitaxial metal oxide structure

    DOE Patents [OSTI]

    Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

    2003-02-25T23:59:59.000Z

    A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

  9. Metal Oxide Semiconductor Nanoparticles Pave the Way for Medical Innovation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighand Retrievals from aRod EggertMercuryAdvanced MaterialsPortal-

  10. Activation of flue gas nitrogen oxides by transition metal complexes

    SciTech Connect (OSTI)

    Miller, M.E.; Finseth, D.H.; Pennline, H.W.

    1987-01-01T23:59:59.000Z

    Sulfur and nitrogen oxides are major flue gas pollutants released by coal-fired electric power plants. In the atmosphere these oxides are converted to sulfuric and nitric acids, which contribute to the acid rain problem. Most of the nitrogen oxides (90%-95%) present in coal-derived flue gas exist as the relatively inert and water-insoluble nitric oxide (NO), thus presenting a difficult removal problem. A practical strategy for nitrogen oxides removal might utilize a solid support that has been impregnated with an active transition metal complex. Some supported transition metals are expected to remove NO/sub x/ by sorption, with regeneration of the sorbent being a necessary property. Others catalyze NO oxidation to the more soluble NO/sub 2/ and N/sub 2/O/sub 5/, which has been demonstrated for certain transition metal species. These activated nitrogen oxides can be more efficiently removed along with SO/sub 2/ in conventional scrubbing or spray-drying processes, in which an aqueous slurry of sorbent, such as hydrated lime, is injected into the hot flue gas. We present here preliminary studies intended to establish basic homogeneous chemistry of transition metal complexes with nitrogen oxides. The transition metals considered in this work are volatile carbonyl complexes. This work is the first step in the development of supported metal species for enhanced nitrogen oxides removal.

  11. Reduction of spalling in mixed metal oxide desulfurization sorbents by addition of a large promoter metal oxide

    DOE Patents [OSTI]

    Poston, J.A.

    1997-12-02T23:59:59.000Z

    Mixed metal oxide pellets for removing hydrogen sulfide from fuel gas mixes derived from coal are stabilized for operation over repeated cycles of desulfurization and regeneration reactions by addition of a large promoter metal oxide such as lanthanum trioxide. The pellets, which may be principally made up of a mixed metal oxide such as zinc titanate, exhibit physical stability and lack of spalling or decrepitation over repeated cycles without loss of reactivity. The lanthanum oxide is mixed with pellet-forming components in an amount of 1 to 10 weight percent.

  12. Reduction of spalling in mixed metal oxide desulfurization sorbents by addition of a large promoter metal oxide

    DOE Patents [OSTI]

    Poston, James A. (Star City, WV)

    1997-01-01T23:59:59.000Z

    Mixed metal oxide pellets for removing hydrogen sulfide from fuel gas mixes derived from coal are stabilized for operation over repeated cycles of desulfurization and regeneration reactions by addition of a large promoter metal oxide such as lanthanum trioxide. The pellets, which may be principally made up of a mixed metal oxide such as zinc titanate, exhibit physical stability and lack of spalling or decrepitation over repeated cycles without loss of reactivity. The lanthanum oxide is mixed with pellet-forming components in an amount of 1 to 10 weight percent.

  13. Optical limiting of layered transition metal dichalcogenide semiconductors

    E-Print Network [OSTI]

    Dong, Ningning; Feng, Yanyan; Zhang, Saifeng; Zhang, Xiaoyan; Chang, Chunxia; Fan, Jintai; Zhang, Long; Wang, Jun

    2015-01-01T23:59:59.000Z

    Nonlinear optical property of transition metal dichalcogenide (TMDC) nanosheet dispersions, including MoS2, MoSe2, WS2, and WSe2, was performed by using Z-scan technique with ns pulsed laser at 1064 nm and 532 nm. The results demonstrate that the TMDC dispersions exhibit significant optical limiting response at 1064 nm due to nonlinear scattering, in contrast to the combined effect of both saturable absorption and nonlinear scattering at 532 nm. Selenium compounds show better optical limiting performance than that of the sulfides in the near infrared. A liquid dispersion system based theoretical modelling is proposed to estimate the number density of the nanosheet dispersions, the relationship between incident laser fluence and the size of the laser generated micro-bubbles, and hence the Mie scattering-induced broadband optical limiting behavior in the TMDC dispersions.

  14. 1/f noise in semiconductor and metal nanocrystal solids

    SciTech Connect (OSTI)

    Liu, Heng, E-mail: leophy@gmail.com; Lhuillier, Emmanuel, E-mail: emmanuel.lhuillier@espci.fr; Guyot-Sionnest, Philippe [James Franck Institute, The University of Chicago, 929 E 57th Street, Chicago, Illinois 60637 (United States)

    2014-04-21T23:59:59.000Z

    Electrical 1/f noise is measured in thin films of CdSe, CdSe/CdS, ZnO, HgTe quantum dots and Au nanocrystals. The 1/f noise, normalized per nanoparticle, shows no systematic dependence on the nanoparticle material and the coupling material. However, over 10 orders of magnitude, it correlates well with the nearest neighbor conductance suggesting some universal magnitude of the 1/f noise in these granular conductors. In the hopping regime, the main mechanism of 1/f noise is determined to be mobility fluctuated. In the metallic regime obtained with gold nanoparticle films, the noise drops to a similar level as bulk gold films and with a similar temperature dependence.

  15. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    SciTech Connect (OSTI)

    Richard T. Scalettar; Warren E. Pickett

    2005-08-02T23:59:59.000Z

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (i) Mott transitions in transition metal oxides, (ii) magnetism in half-metallic compounds, and (iii) large volume-collapse transitions in f-band metals.

  16. Formation of metal oxides by cathodic arc deposition

    SciTech Connect (OSTI)

    Anders, S.; Anders, A.; Rubin, M.; Wang, Z.; Raoux, S.; Kong, F.; Brown, I.G.

    1995-03-01T23:59:59.000Z

    Metal oxide thin films are of interest for a number of applications. Cathodic arc deposition, an established, industrially applied technique for formation of nitrides (e.g. TiN), can also be used for metal oxide thin film formation. A cathodic arc plasma source with desired cathode material is operated in an oxygen atmosphere, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on ALS components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Tantalum oxide films are of interest for replacing polymer electrolytes. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized multilayers of Al{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/AI{sub 2}O{sub 3}/Si as possible basic structures for passive optoelectronic integrated circuits, and Al{sub 2-x}Er{sub x}O{sub 3} thin films with a variable Er concentration which is a potential component layer for the production of active optoelectronic integrated devices such as amplifiers or lasers at a wavelength of 1.53 {mu}m. Aluminum and chromium oxide films have been deposited on a number of substrates to impart improved corrosion resistance at high temperature. Titanium sub-oxides which are electrically conductive and corrosion resistant and stable in a number of aggressive environments have been deposited on various substrates. These sub-oxides are of great interest for use in electrochemical cells.

  17. NREL Demonstrates Efficient Solar Water Splitting by Metal Oxide Photoabsorber (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-01-01T23:59:59.000Z

    New development demonstrates that inexpensive and robust metal oxide photoabsorbers hold great promise as photoanodes for water oxidation.

  18. Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D0{sub 3}-type Heusler alloys

    SciTech Connect (OSTI)

    Gao, G. Y., E-mail: guoying-gao@mail.hust.edu.cn; Yao, Kai-Lun, E-mail: klyao@mail.hust.edu.cn [School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)] [School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2013-12-02T23:59:59.000Z

    High-spin-polarization materials are desired for the realization of high-performance spintronic devices. We combine recent experimental and theoretical findings to theoretically design several high-spin-polarization materials in binary D0{sub 3}-type Heusler alloys: gapless (zero-gap) half-metallic ferrimagnets of V{sub 3}Si and V{sub 3}Ge, half-metallic antiferromagnets of Mn{sub 3}Al and Mn{sub 3}Ga, half-metallic ferrimagnets of Mn{sub 3}Si and Mn{sub 3}Ge, and a spin gapless semiconductor of Cr{sub 3}Al. The high spin polarization, zero net magnetic moment, zero energy gap, and slight disorder compared to the ternary and quaternary Heusler alloys make these binary materials promising candidates for spintronic applications. All results are obtained by the electronic structure calculations from first-principles.

  19. Method for converting uranium oxides to uranium metal

    DOE Patents [OSTI]

    Duerksen, Walter K. (Norris, TN)

    1988-01-01T23:59:59.000Z

    A process is described for converting scrap and waste uranium oxide to uranium metal. The uranium oxide is sequentially reduced with a suitable reducing agent to a mixture of uranium metal and oxide products. The uranium metal is then converted to uranium hydride and the uranium hydride-containing mixture is then cooled to a temperature less than -100.degree. C. in an inert liquid which renders the uranium hydride ferromagnetic. The uranium hydride is then magnetically separated from the cooled mixture. The separated uranium hydride is readily converted to uranium metal by heating in an inert atmosphere. This process is environmentally acceptable and eliminates the use of hydrogen fluoride as well as the explosive conditions encountered in the previously employed bomb-reduction processes utilized for converting uranium oxides to uranium metal.

  20. Antiferromagnetic exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

    E-Print Network [OSTI]

    Olejnik, K.

    2010-01-01T23:59:59.000Z

    exchange bias of a magnetic semiconductor by a magneticexchange bias in the magnetic semiconductor. The shape and

  1. Catalysis using hydrous metal oxide ion exchangers

    DOE Patents [OSTI]

    Dosch, R.G.; Stephens, H.P.; Stohl, F.V.

    1983-07-21T23:59:59.000Z

    In a process which is catalyzed by a catalyst comprising an active metal on a carrier, said metal being active as a catalyst for the process, an improvement is provided wherein the catalyst is a hydrous, alkali metal or alkaline earth metal titanate, zirconate, niobate or tantalate wherein alkali or alkaline earth metal cations have been exchanged with a catalytically effective amount of cations of said metal.

  2. Aerosol chemical vapor deposition of metal oxide films

    DOE Patents [OSTI]

    Ott, Kevin C. (4745 Trinity Dr., Los Alamos, NM 87544); Kodas, Toivo T. (5200 Noreen Dr. NE., Albuquerque, NM 87111)

    1994-01-01T23:59:59.000Z

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  3. Disordered electronic and magnetic systems - transition metal (Mn) and rare earth (Gd) doped amorphous group IV semiconductors (C, Si, Ge)

    E-Print Network [OSTI]

    Zeng, Li

    2007-01-01T23:59:59.000Z

    1.1 Magnetic Semiconductors . . . . . . . . . . . . . . .Semiconductors . . . . . . . . . . . . . . . . . . . 1.3in Semiconductors . . . . . . . . . . . . . . . . . . 1.3.5

  4. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J., E-mail: james.bullock@anu.edu.au; Cuevas, A.; Yan, D. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Micro Engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory PVLab, Maladière 71b, CH-200 Neuchâtel (Switzerland)

    2014-10-28T23:59:59.000Z

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ?1.55?nm, achieve the best carrier-selectivity producing a contact resistivity ?{sub c} of ?3 m? cm{sup 2} and a recombination current density J{sub 0c} of ?40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350?°C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  5. Charge, orbital and magnetic ordering in transition metal oxides 

    E-Print Network [OSTI]

    Senn, Mark Stephen

    2013-06-29T23:59:59.000Z

    Neutron and x-ray diffraction has been used to study charge, orbital and magnetic ordering in some transition metal oxides. The long standing controversy regarding the nature of the ground state (Verwey structure) of the ...

  6. Magnetic Properties of Mesoporous and Nano-particulate Metal Oxides 

    E-Print Network [OSTI]

    Hill, Adrian H

    2009-01-01T23:59:59.000Z

    The magnetic properties of the first row transition metal oxides are wide and varied and have been studied extensively since the 1930’s. Observations that the magnetic properties of these material types change with the ...

  7. area metal oxide: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Science Websites Summary: have generated considerable interest for applications such as thin film displays with improved color of a metal oxide-based QD-LED structure10 injection...

  8. Noble metal catalysts for oxidation of mercury in flue gas

    SciTech Connect (OSTI)

    Presto, A.A.; Granite, E.J.

    2008-04-01T23:59:59.000Z

    The use of precious metals and platinum group metals as catalysts for oxidation of mercury in flue gas is an active area of study. To date, field studies have recently focused on gold and palladium catalysts installed at pilot-scale. In this work, we introduce bench-scale results for gold, platinum, and palladium catalysts tested in realistic simulated flue gas. Initial results reveal intriguing characteristics of catalytic mercury oxidation and provide insight for future research.

  9. Plutonium metal and oxide container weld development and qualification

    SciTech Connect (OSTI)

    Fernandez, R.; Horrell, D.R.; Hoth, C.W.; Pierce, S.W.; Rink, N.A.; Rivera, Y.M.; Sandoval, V.D.

    1996-01-01T23:59:59.000Z

    Welds were qualified for a container system to be used for long-term storage of plutonium metal and oxide. Inner and outer containers are formed of standard tubing with stamped end pieces gas-tungsten-arc (GTA) welded onto both ends. The weld qualification identified GTA parameters to produce a robust weld that meets the requirements of the Department of Energy standard DOE-STD-3013-94, ``Criteria for the Safe Storage of Plutonium Metals and Oxides.``

  10. Production of pulsed, mass-selected beams of metal and semiconductor clusters

    SciTech Connect (OSTI)

    Kamalou, Omar; Rangama, Jimmy; Ramillon, Jean-Marc; Guinement, Patrick; Huber, Bernd A. [CIMAP, CEA-CNRS-ENSICaen-UCBN, Bv. Henry Becquerel (B.P. 5133), F-14070 Caen Cedex 05 (France)

    2008-06-15T23:59:59.000Z

    We report on the development of a beam line for mass-selected metal and semiconductor clusters. The cluster source combines the principles of plasma sputtering and gas condensation. Both techniques together allow to produce clusters in a wide size range. With the aid of a time-of-flight system, small clusters (i.e., Cu{sub n}{sup +}, n<100) are selected and pure beams containing only one cluster size are provided. For large clusters (containing several thousands of atoms), a beam with a narrow size distribution is obtained. A 90 deg. quadrupole deviator is used to separate charged clusters from neutral ones.

  11. Displacement method and apparatus for reducing passivated metal powders and metal oxides

    DOE Patents [OSTI]

    Morrell; Jonathan S. (Knoxville, TN), Ripley; Edward B. (Knoxville, TN)

    2009-05-05T23:59:59.000Z

    A method of reducing target metal oxides and passivated metals to their metallic state. A reduction reaction is used, often combined with a flux agent to enhance separation of the reaction products. Thermal energy in the form of conventional furnace, infrared, or microwave heating may be applied in combination with the reduction reaction.

  12. Activation of flue gas nitrogen oxides by transition metal complexes

    SciTech Connect (OSTI)

    Miller, M.E.; Finseth, D.H.; Pennline, H.W.

    1987-01-01T23:59:59.000Z

    Sulfur and nitrogen oxides are major flue gas pollutants released by coal-fired electric power plants. In the atmosphere these oxides are converted to sulfuric and nitric acids, which contribute to the acid rain problem. Most of the nitrogen oxides present in coal-derived flue gas exist as the relatively inert and water-insoluble nitric oxide (NO), thus presenting a difficult removal problem. We present preliminary studies intended to establish basic homogeneous chemistry of transition metal complexes with nitrogen oxides. The transition metals considered in this work are volatile carbonyl complexes. The metal carbonyls took up nitric oxide homogeneously in the gas phase. Iron required uv light for reaction with NO, but the same result is expected with the application of heat. Metal carbonyls also reacted with nitrogen dioxide but produced polynuclear metal species. Oxygen did not attack the carbonyl or nitrosyl complexes. Results indicate high potential for NO/sub x/ removal from stack gases by sorption onto supported metal carbonyl complexes. The solid form allows ease in separation from the flue gas. Regeneration of the sorbent might be achieved by treating with CO to liberate NO/sub x/ by displacement or by heating to decompose and drive off NO/sub x/.

  13. Enhanced Half-Metallicity in Edge-Oxidized Zigzag Graphene

    E-Print Network [OSTI]

    Hod, Oded

    Enhanced Half-Metallicity in Edge-Oxidized Zigzag Graphene Nanoribbons Oded Hod,* Vero´nica Barone theoretical study of the electronic properties and relative stabilities of edge-oxidized zigzag graphene with nanometer scale dimen- sions. Recently, a new type of graphene-based material was experimentally realized.12

  14. Metal-oxide-based energetic materials and synthesis thereof

    DOE Patents [OSTI]

    Tillotson, Thomas M. (Tracy, CA), Simpson; Randall L. (Livermore, CA); Hrubesh, Lawrence W. (Pleasanton, CA)

    2006-01-17T23:59:59.000Z

    A method of preparing energetic metal-oxide-based energetic materials using sol-gel chemistry has been invented. The wet chemical sol-gel processing provides an improvement in both safety and performance. Essentially, a metal-oxide oxidizer skeletal structure is prepared from hydrolyzable metals (metal salts or metal alkoxides) with fuel added to the sol prior to gelation or synthesized within the porosity metal-oxide gel matrix. With metal salt precursors a proton scavenger is used to destabilize the sol and induce gelation. With metal alkoxide precursors standard well-known sol-gel hydrolysis and condensation reactions are used. Drying is done by standard sol-gel practices, either by a slow evaporation of the liquid residing within the pores to produce a high density solid nanocomposite, or by supercritical extraction to produce a lower density, high porous nanocomposite. Other ingredients may be added to this basic nanostructure to change physical and chemical properties, which include organic constituents for binders or gas generators during reactions, burn rate modifiers, or spectral emitters.

  15. First principles study of Fe in diamond: A diamond-based half metallic dilute magnetic semiconductor

    SciTech Connect (OSTI)

    Benecha, E. M. [Department of Physics, University of South Africa, P.O. Box 392, UNISA 0003 Pretoria (South Africa); Lombardi, E. B., E-mail: lombaeb@unisa.ac.za [College of Graduate Studies, University of South Africa, P.O. Box 392, UNISA 0003 Pretoria (South Africa)

    2013-12-14T23:59:59.000Z

    Half-metallic ferromagnetic ordering in semiconductors, essential in the emerging field of spintronics for injection and transport of highly spin polarised currents, has up to now been considered mainly in III–V and II–VI materials. However, low Curie temperatures have limited implementation in room temperature device applications. We report ab initio Density Functional Theory calculations on the properties of Fe in diamond, considering the effects of lattice site, charge state, and Fermi level position. We show that the lattice sites and induced magnetic moments of Fe in diamond depend strongly on the Fermi level position and type of diamond co-doping, with Fe being energetically most favorable at the substitutional site in p-type and intrinsic diamond, while it is most stable at a divacancy site in n-type diamond. Fe induces spin polarized bands in the band gap, with strong hybridization between Fe-3d and C-2s,2p bands. We further consider Fe-Fe spin interactions in diamond and show that substitutional Fe{sup +1} in p-type diamond exhibits a half-metallic character, with a magnetic moment of 1.0??{sub B} per Fe atom and a large ferromagnetic stabilization energy of 33?meV, an order of magnitude larger than in other semiconductors, with correspondingly high Curie temperatures. These results, combined with diamond's unique properties, demonstrate that Fe doped p-type diamond is likely to be a highly suitable candidate material for spintronics applications.

  16. Aerosol chemical vapor deposition of metal oxide films

    DOE Patents [OSTI]

    Ott, K.C.; Kodas, T.T.

    1994-01-11T23:59:59.000Z

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

  17. Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

    E-Print Network [OSTI]

    Heo, Jaeyeong

    We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, ...

  18. Atomic and electronic structures of oxides on III-V semiconductors :

    E-Print Network [OSTI]

    Shen, Jian

    2010-01-01T23:59:59.000Z

    and passivation of a compound semiconductor surface duringIn 2 O and SiO/III-V Semiconductor Interface, in press with2 O and SiO/III-V Semiconductor Interface, ECS Transaction (

  19. Methods of making metal oxide nanostructures and methods of controlling morphology of same

    DOE Patents [OSTI]

    Wong, Stanislaus S; Hongjun, Zhou

    2012-11-27T23:59:59.000Z

    The present invention includes a method of producing a crystalline metal oxide nanostructure. The method comprises providing a metal salt solution and providing a basic solution; placing a porous membrane between the metal salt solution and the basic solution, wherein metal cations of the metal salt solution and hydroxide ions of the basic solution react, thereby producing a crystalline metal oxide nanostructure.

  20. Ethanol oxidation on metal oxide-supported platinum catalysts

    SciTech Connect (OSTI)

    L. M. Petkovic 090468; Sergey N. Rashkeev; D. M. Ginosar

    2009-09-01T23:59:59.000Z

    Ethanol is a renewable fuel that can be used as an additive to gasoline (or its substitute) with the advantage of octane enhancement and reduced carbon monoxide exhaust emissions. However, on Ethanol is a renewable fuel that can be used as an additive to gasoline (or its substitute) with the advantage of octane enhancement and reduced carbon monoxide exhaust emissions. However, on the standard three-way catalysts, the conversion of unburned ethanol is low because both ethanol and some of its partially oxidized derivatives are highly resistant to oxidation. A combination of first-principles density-functional theory (DFT) based calculations and in-situ diffuse reflectance infrared spectroscopy (DRIFTS) analysis was applied to uncover some of the fundamental phenomena associated with ethanol oxidation on Pt containing catalysts. In particular, the objective was to analyze the role of the oxide (i.e., ?-Al2O3 or SiO2) substrate on the ethanol oxidation activity. The results showed that Pt nanoparticles trap and accumulate oxygen at their surface and perimeter sites and play the role of “stoves” that burn ethanol molecules and their partially oxidized derivatives to the “final” products. The ?-Al2O3 surfaces provided higher mobility of the fragments of ethanol molecules than the SiO2 surface and hence increased the supply rate of these objects to the Pt particles. This will in turn produce a higher conversion rate of unburned ethanol.and some of its partially oxidized derivatives are highly resistant to oxidation. A combination of first-principles density-functional theory (DFT) based calculations and in-situ diffuse reflectance infrared spectroscopy (DRIFTS) analysis was applied to uncover some of the fundamental phenomena associated with ethanol oxidation on Pt containing catalysts. In particular, the objective was to analyze the role of the oxide (i.e., ?-Al2O3 or SiO2) substrate on the ethanol oxidation activity. The results showed that Pt nanoparticles trap and accumulate oxygen at their surface and perimeter sites and play the role of “stoves” that burn ethanol molecules and their partially oxidized derivatives to the “final” products. The ?-Al2O3 surfaces provided higher mobility of the fragments of ethanol molecules than the SiO2 surface and hence increased the supply rate of these objects to the Pt particles. This will in turn produce a higher conversion rate of unburned ethanol.

  1. Stoichiometry determined exchange interactions in amorphous ternary transition metal oxides: Theory and experiment

    SciTech Connect (OSTI)

    Hu, Shu-jun; Yan, Shi-shen, E-mail: shishenyan@sdu.edu.cn; Zhang, Yun-peng; Zhao, Ming-wen; Kang, Shi-shou; Mei, Liang-mo [School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

    2014-07-28T23:59:59.000Z

    Amorphous transition metal oxides exhibit exotic transport and magnetic properties, while the absence of periodic structure has long been a major obstacle for the understanding of their electronic structure and exchange interaction. In this paper, we have formulated a theoretical approach, which combines the melt-quench approach and the spin dynamic Monte-Carlo simulations, and based on it, we explored amorphous Co{sub 0.5}Zn{sub 0.5}O{sub 1?y} ternary transition metal oxides. Our theoretical results reveal that the microstructure, the magnetic properties, and the exchange interactions of Co{sub 0.5}Zn{sub 0.5}O{sub 1?y} are strongly determined by the oxygen stoichiometry. In the oxygen-deficient sample (y?>?0), we have observed the long-range ferromagnetic spin ordering which is associated with the non-stoichiometric cobalt-rich region rather than metallic clusters. On the other hand, the microstructure of stoichiometric sample takes the form of continuous random networks, and no long-range ferromagnetism has been observed in it. Magnetization characterization of experimental synthesized Co{sub 0.61}Zn{sub 0.39}O{sub 1?y} films verifies the relation between the spin ordering and the oxygen stoichiometry. Furthermore, the temperature dependence of electrical transport shows a typical feature of semiconductors, in agreement with our theoretical results.

  2. Controlling Graphene Ultrafast Hot Carrier Response from Metal-like to Semiconductor-like by Electrostatic Gating

    E-Print Network [OSTI]

    Zettl, Alex

    with dry nitrogen during the measurement. Sample preparation We grow single layer graphene on copper foil1 Controlling Graphene Ultrafast Hot Carrier Response from Metal-like to Semiconductor electro-optic sampling.2 The focused THz beam at our graphene sample has a diameter of 1 mm. For optical

  3. Super-Resolution Mapping of Photogenerated Electron and Hole Separation in Single Metal-Semiconductor Nanocatalysts

    SciTech Connect (OSTI)

    Ha, Ji Won [Ames Laboratory; Ruberu, T. Purnima A. [Ames Laboratory; Han, Rui [Ames Laboratory; Dong, Bin [Ames Laboratory; Vela, Javier [Ames Laboratory; Fang, Ning [Ames Laboratory

    2014-01-12T23:59:59.000Z

    Metal–semiconductor heterostructures are promising visible light photocatalysts for many chemical reactions. Here, we use high-resolution superlocalization imaging to reveal the nature and photocatalytic properties of the surface reactive sites on single Au–CdS hybrid nanocatalysts. We experimentally reveal two distinct, incident energy-dependent charge separation mechanisms that result in completely opposite photogenerated reactive sites (e– and h+) and divergent energy flows on the hybrid nanocatalysts. We find that plasmon-induced hot electrons in Au are injected into the conduction band of the CdS semiconductor nanorod. The specifically designed Au-tipped CdS heterostructures with a unique geometry (two Au nanoparticles at both ends of each CdS nanorod) provide more convincing high-resolution single-turnover mapping results and clearly prove the two charge separation mechanisms. Engineering the direction of energy flow at the nanoscale can provide an efficient way to overcome important challenges in photocatalysis, such as controlling catalytic activity and selectivity. These results bear enormous potential impact on the development of better visible light photocatalysts for solar-to-chemical energy conversion.

  4. Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

    SciTech Connect (OSTI)

    Lyons, J. L.; Janotti, A.; Van de Walle, C. G. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2014-01-07T23:59:59.000Z

    We examine how hole localization limits the effectiveness of substitutional acceptors in oxide and nitride semiconductors and explain why p-type doping of these materials has proven so difficult. Using hybrid density functional calculations, we find that anion-site substitutional impurities in AlN, GaN, InN, and ZnO lead to atomic-like states that localize on the impurity atom itself. Substitution with cation-site impurities, on the other hand, triggers the formation of polarons that become trapped on nearest-neighbor anions, generally leading to large ionization energies for these acceptors. Unlike shallow effective-mass acceptors, these two types of deep acceptors couple strongly with the lattice, significantly affecting the optical properties and severely limiting prospects for achieving p-type conductivity in these wide-band-gap materials.

  5. Criteria for safe storage of plutonium metals and oxides

    SciTech Connect (OSTI)

    Not Available

    1994-12-01T23:59:59.000Z

    This standard establishes safety criteria for safe storage of plutonium metals and plutonium oxides at DOE facilities; materials packaged to meet these criteria should not need subsequent repackaging to ensure safe storage for at least 50 years or until final disposition. The standard applied to Pu metals, selected alloys (eg., Ga and Al alloys), and stabilized oxides containing at least 50 wt % Pu; it does not apply to Pu-bearing liquids, process residues, waste, sealed weapon components, or material containing more than 3 wt % {sup 238}Pu. Requirements for a Pu storage facility and safeguards and security considerations are not stressed as they are addressed in detail by other DOE orders.

  6. Sharp semiconductor-to-metal transition of VO{sub 2} thin films on glass substrates

    SciTech Connect (OSTI)

    Jian, Jie; Chen, Aiping [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States); Zhang, Wenrui [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Wang, Haiyan, E-mail: wangh@ece.tamu.edu [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States); Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States)

    2013-12-28T23:59:59.000Z

    Outstanding phase transition properties of vanadium dioxide (VO{sub 2}) thin films on amorphous glass were achieved and compared with the ones grown on c-cut sapphire and Si (111) substrates, all by pulsed laser deposition. The films on glass substrate exhibit a sharp semiconductor-to-metal transition (?4.3?°C) at a near bulk transition temperature of ?68.4?°C with an electrical resistance change as high as 3.2?×?10{sup 3} times. The excellent phase transition properties of the films on glass substrate are correlated with the large grain size and low defects density achieved. The phase transition properties of VO{sub 2} films on c-cut sapphire and Si (111) substrates were found to be limited by the high defect density.

  7. Strongly modified four-wave mixing in a coupled semiconductor quantum dot-metal nanoparticle system

    SciTech Connect (OSTI)

    Paspalakis, Emmanuel, E-mail: paspalak@upatras.gr [Materials Science Department, School of Natural Sciences, University of Patras, 265 04 Patras (Greece); Evangelou, Sofia [Materials Science Department, School of Natural Sciences, University of Patras, 265 04 Patras (Greece); Department of Materials Science and Engineering, University of Ioannina, Ioannina 45110 (Greece); Kosionis, Spyridon G.; Terzis, Andreas F. [Department of Physics, School of Natural Sciences, University of Patras, 265 04 Patras (Greece)

    2014-02-28T23:59:59.000Z

    We study the four-wave mixing effect in a coupled semiconductor quantum dot-spherical metal nanoparticle structure. Depending on the values of the pump field intensity and frequency, we find that there is a critical distance that changes the form of the spectrum. Above this distance, the four-wave mixing spectrum shows an ordinary three-peaked form and the effect of controlling its magnitude by changing the interparticle distance can be obtained. Below this critical distance, the four-wave mixing spectrum becomes single-peaked; and as the interparticle distance decreases, the spectrum is strongly suppressed. The behavior of the system is explained using the effective Rabi frequency that creates plasmonic metaresonances in the hybrid structure. In addition, the behavior of the effective Rabi frequency is explained via an analytical solution of the density matrix equations.

  8. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOE Patents [OSTI]

    Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

    2010-07-13T23:59:59.000Z

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  9. Proton-induced transient effects in a metal-semiconductor-metal (MSM) photodetector for optical-based data transfer

    SciTech Connect (OSTI)

    Marshall, C.J. [NASA/GSFC, Greenbelt, MD (United States)] [NASA/GSFC, Greenbelt, MD (United States); [NRL, Washington, DC (United States); Marshall, P.W.; Carts, M.A. [NRL, Washington, DC (United States)] [NRL, Washington, DC (United States); [SFA, Largo, MD (United States); Reed, R.A.; LaBel, K.A. [NASA/GSFC, Greenbelt, MD (United States)] [NASA/GSFC, Greenbelt, MD (United States)

    1998-12-01T23:59:59.000Z

    The authors present a study of proton transient effects in metal-semiconductor-metal (MSM) photodetectors, which demonstrates their inherent advantage for minimizing Single Event Effects (SEEs) in proton environments. Upset mechanisms are characterized for 830 nm GaAs and 1300 nm InGaAs detectors. Only protons incident at grazing angles are likely to cause a bit errors by direct ionization. The MSM technology appears to be a more robust to single bit errors than thicker 1300 nm p-i-n diode structures which the authors have previously shown to be susceptible to errors from direct ionization events at all angles, and also are relatively high optical powders. For a given receiver, the relative contributions of direct ionization and nuclear reaction upset mechanisms at a specific data rate and optical power are determined by the geometry of the charge collection volume of the detector. The authors show that state-of-the-art p-i-n detectors can also display a reduced sensitivity to direct ionization by incident protons except at grazing angles.

  10. Synthesis and characterization of nanostructured transition metal oxides for energy storage devices

    E-Print Network [OSTI]

    Kim, Jong Woung

    2012-01-01T23:59:59.000Z

    Figure 1.1. Ragone plot of various energy storage systems [metal oxides for energy storage devices A dissertationmetal oxides for energy storage devices by Jong Woung Kim

  11. Temperature dependent junction capacitance-voltage characteristics of Ni embedded TiN/SiO{sub 2}/p-Si metal–insulator–semiconductor structure

    SciTech Connect (OSTI)

    Panda, J.; Nath, T. K., E-mail: tnath@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Chattopadhyay, S. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Amity Institute of Nano Technology, Amity University, Sector-125, Noida, Uttar Pradesh 201313 (India)

    2013-12-14T23:59:59.000Z

    This work presents the junction capacitance–voltage characteristics of highly textured/epitaxial Ni nanoparticle embedded in TiN matrix (TiN(Ni)) metal-insulator-semiconductor TiN(Ni)/SiO{sub 2}/p-Si (100) heterojunction in the temperature range of 10–300?K. This heterojunction behaves as metal-semiconductor junction with unavoidable leakage through native oxide SiO{sub 2} layer. The clockwise hysteresis loop has been observed in the capacitance-voltage characteristics measured at various frequencies mainly due to presence of trap centers at the TiN(Ni)/SiO{sub 2} interface and these are temperature dependent. The spin-dependent trap charge effect at the interface influences the quadratic nature of the capacitance with magnetic field. The junction magnetocapacitance (JMC) is observed to be dependent on both temperature and frequency. The highest JMC of this heterojunction has been observed at 200?K at higher frequencies (100?kHz–1?MHz). It is found that there is not much effect of band structure modification under magnetic field causing the JMC.

  12. Metal current collect protected by oxide film

    DOE Patents [OSTI]

    Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); DeJonghe, Lutgard C. (Lafayette, CA)

    2004-05-25T23:59:59.000Z

    Provided are low-cost, mechanically strong, highly electronically conductive current collects and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical devices having as current interconnects a ferritic steel felt or screen coated with a protective oxide film.

  13. EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes

    E-Print Network [OSTI]

    EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes and Technology Clear Water Bay, Kowloon, Hong Kong Abstract Indium-tin oxide anodes capped with certain oxides-emitting diodes (OLEDs). The oxides of tin, zinc, praseodymium, yttrium, gallium, terbium and titanium have been

  14. Modeling and experimental studies of oxide covered metal surfaces: TiO{sub 2}/Ti a model system. Progress report

    SciTech Connect (OSTI)

    Smyrl, W.H.

    1991-12-31T23:59:59.000Z

    Prior work in our laboratories at the Corrosion Research Center has shown that thin, anodic TiO{sub 2} films formed by the Slow Growth Mode (SGM) on polycrystalline titanium and microcrystalline with a texture that varies from one metal grain to another. Furthermore, the underlying metal grains are mapped by the photoelectrochemical response of the oxide. The same characteristics have also been demonstrated in our laboratory for ZnO grown on Zn. The TiO{sub 2}/Ti system has been chosen for study both because of its importance in energy systems, and because it can serve as a model system for other metal-metal oxide couples. The investigations of anodic TiO{sub 2} films on Ti have shown that the properties of thin films are consistent with the rutile form of the oxide. Both experimental data and theoretical calculations show the close resemblance to results on single crystal TiO{sub 2}. Furthermore, the modeling studies reveal that the optical transitions near the bandedge arise from the bulk band structure. The photoelectrochemical properties of anodic TiO{sub 2} films have now been shown to obey the simple Gaertner-Butler model for the semiconductor-electrolyte interface, with a few modifications. The most important deviation has now been shown to be a result of multiple internal reflections in the oxide film.

  15. Modeling and experimental studies of oxide covered metal surfaces: TiO sub 2 /Ti a model system

    SciTech Connect (OSTI)

    Smyrl, W.H.

    1991-01-01T23:59:59.000Z

    Prior work in our laboratories at the Corrosion Research Center has shown that thin, anodic TiO{sub 2} films formed by the Slow Growth Mode (SGM) on polycrystalline titanium and microcrystalline with a texture that varies from one metal grain to another. Furthermore, the underlying metal grains are mapped by the photoelectrochemical response of the oxide. The same characteristics have also been demonstrated in our laboratory for ZnO grown on Zn. The TiO{sub 2}/Ti system has been chosen for study both because of its importance in energy systems, and because it can serve as a model system for other metal-metal oxide couples. The investigations of anodic TiO{sub 2} films on Ti have shown that the properties of thin films are consistent with the rutile form of the oxide. Both experimental data and theoretical calculations show the close resemblance to results on single crystal TiO{sub 2}. Furthermore, the modeling studies reveal that the optical transitions near the bandedge arise from the bulk band structure. The photoelectrochemical properties of anodic TiO{sub 2} films have now been shown to obey the simple Gaertner-Butler model for the semiconductor-electrolyte interface, with a few modifications. The most important deviation has now been shown to be a result of multiple internal reflections in the oxide film.

  16. All-alkoxide synthesis of strontium-containing metal oxides

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    A method for making strontium-containing metal-oxide ceramic thin films from a precursor liquid by mixing a strontium neo-pentoxide dissolved in an amine solvent and at least one metal alkoxide dissolved in a solvent, said at least one metal alkoxide selected from the group consisting of alkoxides of calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium, zirconium, yttrium, lanthanum, antimony, chromium and thallium, depositing a thin film of the precursor liquid on a substrate, and heating the thin film in the presence of oxygen at between 550 and 700.degree. C.

  17. Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study

    E-Print Network [OSTI]

    Ceder, Gerbrand

    a promising gate oxide material to replace silicon dioxide in metal-oxide- semiconductor devices. Using-earth-doped lasers. Recently, Y2O3 has re- ceived attention as a promising candidate for replacing sili- con dioxide SiO2 as a gate dielectric material in metal- oxide-semiconductor MOS transistors.1­10 The continual

  18. Metal complexes of substituted Gable porphyrins as oxidation catalysts

    DOE Patents [OSTI]

    Lyons, J.E.; Ellis, P.E. Jr.; Wagner, R.W.

    1996-01-02T23:59:59.000Z

    Transition metal complexes of Gable porphyrins are disclosed having two porphyrin rings connected through a linking group, and having on the porphyrin rings electron-withdrawing groups, such as halogen, nitro or cyano. These complexes are useful as catalysts for the oxidation of organic compounds, e.g. alkanes.

  19. Metal complexes of substituted Gable porphyrins as oxidation catalysts

    DOE Patents [OSTI]

    Lyons, James E. (Wallingford, PA); Ellis, Jr., Paul E. (Downingtown, PA); Wagner, Richard W. (Murrysville, PA)

    1996-01-01T23:59:59.000Z

    Transition metal complexes of Gable porphyrins having two porphyrin rings connected through a linking group, and having on the porphyrin rings electron-withdrawing groups, such as halogen, nitro or cyano. These complexes are useful as catalysts for the oxidation of organic compounds, e.g. alkanes.

  20. Stability and Aggregation of Metal Oxide Nanoparticles in Natural

    E-Print Network [OSTI]

    Cardinale, Bradley J.

    dispersed three different metal oxide nanoparticles (TiO2, ZnO and CeO2) in samples taken from eight,river,andgroundwater,andmeasuredtheirelectrophoretic mobility, state of aggregation, and rate of sedimentation.g., sunscreens, paints, coatings, catalysts). A simplified con- ceptual model of a typical nanoparticle life

  1. Volatile organometallic complexes suitable for use in chemical vapor depositions on metal oxide films

    DOE Patents [OSTI]

    Giolando, Dean M.

    2003-09-30T23:59:59.000Z

    Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

  2. Production of Oxygen Gas and Liquid Metal by Electrochemical Decomposition of Molten Iron Oxide

    E-Print Network [OSTI]

    Wang, Dihua

    Molten oxide electrolysis (MOE) is the electrolytic decomposition of a metal oxide, most preferably into liquid metal and oxygen gas. The successful deployment of MOE hinges upon the existence of an inert anode capable of ...

  3. Electrical excitation of colloidally synthesized quantum dots in metal oxide structures

    E-Print Network [OSTI]

    Wood, Vanessa Claire

    2010-01-01T23:59:59.000Z

    This thesis develops methods for integrating colloidally synthesized quantum dots (QDs) and metal oxides in optoelectronic devices, presents three distinct light emitting devices (LEDs) with metal oxides surrounding a QD ...

  4. Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance. Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for...

  5. Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom

    DOE Patents [OSTI]

    Christen, David K. (Oak Ridge, TN); He, Qing (Bloomington, MN)

    2003-04-29T23:59:59.000Z

    The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

  6. Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom

    DOE Patents [OSTI]

    Christen, David K. (Oak Ridge, TN); He, Qing (Bloomington, MN)

    2001-01-01T23:59:59.000Z

    The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

  7. Solubility Behavior and Phase Stability of Transition Metal Oxides in Alkaline Hydrothermal Environments

    SciTech Connect (OSTI)

    S.E. Ziemniak

    2000-05-18T23:59:59.000Z

    The solubility behavior of transition metal oxides in high temperature water is interpreted by recognizing three types of chemical reaction equilibria: metal oxide hydration/dehydration, metal oxide dissolution and metal ion hydroxocomplex formation. The equilibria are quantified using thermodynamic concepts and the thermochemical properties of the metal oxides/ions representative of the most common constituents of construction metal alloys, i.e., element shaving atomic numbers between Z = 22 (Ti) and Z = 30 (Zn), are summarized on the basis of metal oxide solubility studies conducted in the laboratory. Particular attention is devoted to the uncharged metal ion hydrocomplex, M{sup Z}(OH){sub Z}(aq), since its thermochemical properties define minimum solubilities of the metal oxide at a given temperature. Experimentally-extracted values of standard partial molal entropy (S{sup 0}) for the transition metal ion neutral hydroxocomplex are shown to be influenced by ligand field stabilization energies and complex symmetry.

  8. Finding Room for Improvement in Transition Metal Oxides Cathodes for Lithium-ion Batteries

    E-Print Network [OSTI]

    Kam, Kinson

    2012-01-01T23:59:59.000Z

    Metal Oxides Cathodes for Lithium-ion Batteries Kinson C.storage using rechargeable lithium-ion batteries has become

  9. Linker-Induced Anomalous Emission of Organic-Molecule Conjugated Metal-Oxide Nanoparticles

    SciTech Connect (OSTI)

    Turkowski, Volodymyr; Babu, Suresh; Le, Duy; Kumar, Amit; Haldar, Manas K.; Wagh, Anil V.; Hu, Zhongjian; Karakoti, Ajay S.; Gesquiere, Andre J.; Law, Benedict; Mallik, Sanku; Rahman, Talat S.; Leuenberger, Michael N.; Seal, Sudipta

    2012-06-26T23:59:59.000Z

    Semiconductor nanoparticles conjugated with organic- and dye-molecules to yield high efficiency visible photoluminescence (PL) hold great potential for many future technological applications. We show that folic acid (FA)-conjugated to nanosize TiO2 and CeO2 particles demonstrates a dramatic increase of photoemission intensity at wavelengths between 500 and 700 nm when derivatized using aminopropyl trimethoxysilane (APTMS) as spacer-linker molecules between the metal oxide and FA. Using density-functional theory (DFT) and time-dependent DFT calculations we demonstrate that the strong increase of the PL can be explained by electronic transitions between the titania surface oxygen vacancy (OV) states and the low-energy excited states of the FA/APTMS molecule anchored onto the surface oxygen bridge sites in close proximity to the OVs. We suggest this scenario to be a universal feature for a wide class of metal oxide nanoparticles, including nanoceria, possessing a similar band gap (3 eV) and with a large surface-vacancy-related density of electronic states. We demonstrate that the molecule-nanoparticle linker can play a crucial role in tuning the electronic and optical properties of nanosystems by bringing optically active parts of the molecule and of the surface close to each other.

  10. Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts

    SciTech Connect (OSTI)

    Islam, Raisul, E-mail: raisul@stanford.edu; Shine, Gautam; Saraswat, Krishna C. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2014-11-03T23:59:59.000Z

    We report the experimental demonstration of Fermi level depinning using nickel oxide (NiO) as the insulator material in metal-insulator-semiconductor (M-I-S) contacts. Using this contact, we show less than 0.1?eV barrier height for holes in platinum/NiO/silicon (Pt/NiO/p-Si) contact. Overall, the pinning factor was improved from 0.08 (metal/Si) to 0.26 (metal/NiO/Si). The experimental results show good agreement with that obtained from theoretical calculation. NiO offers high conduction band offset and low valence band offset with Si. By reducing Schottky barrier height, this contact can be used as a carrier selective contact allowing hole transport but blocking electron transport, which is important for high efficiency in photonic applications such as photovoltaics and optical detectors.

  11. Stable surface passivation process for compound semiconductors

    DOE Patents [OSTI]

    Ashby, Carol I. H. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

  12. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01T23:59:59.000Z

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1?xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x?more »has been extended to x?xSc1?xN alloys show moderate direct bandgap bowing with a bowing parameter, B?=?1.41?±?0.19?eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70?±?0.20?eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1?xN alloys enable high quality epitaxial rocksalt metal/AlxSc1?xN superlattices with a wide range of accessible metamaterials properties.« less

  13. Catalytic oxidation of CO by platinum group metals: from ultrahigh vacuum to elevated pressures

    E-Print Network [OSTI]

    Goodman, Wayne

    oxidation over platinum group metals has been investigated for some eight decades by many researchersCatalytic oxidation of CO by platinum group metals: from ultrahigh vacuum to elevated pressures A Catalytic oxidation of CO over platinum group metals (Pt, Ir, Rh and Pd) has been the subject of many

  14. Nanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes

    E-Print Network [OSTI]

    Nair, Sankar

    made from metal oxides -- work that could lead to a technique for precisely conNanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes Science their diameter and length. Based on metal oxides in combination with silicon and germanium, such single

  15. Production of Oxygen Gas and Liquid Metal by Electrochemical Decomposition of Molten Iron Oxide

    E-Print Network [OSTI]

    Sadoway, Donald Robert

    on the moon and on Mars for the generation of oxygen along with the production of structural metalsProduction of Oxygen Gas and Liquid Metal by Electrochemical Decomposition of Molten Iron Oxide) is the electrolytic decomposition of a metal oxide, most preferably into liquid metal and oxygen gas. The successful

  16. Cyclic catalytic upgrading of chemical species using metal oxide materials

    DOE Patents [OSTI]

    White, James H; Schutte, Erick J; Rolfe, Sara L

    2013-05-07T23:59:59.000Z

    Processes are disclosure which comprise alternately contacting an oxygen-carrying catalyst with a reducing substance, or a lower partial pressure of an oxidizing gas, and then with the oxidizing gas or a higher partial pressure of the oxidizing gas, whereby the catalyst is alternately reduced and then regenerated to an oxygenated state. In certain embodiments, the oxygen-carrying catalyst comprises at least one metal oxide-containing material containing a composition having the following formulas: (a) Ce.sub.xB.sub.yB'.sub.zB''O.sub..delta., wherein B=Ba, Sr, Ca, or Zr; B'=Mn, Co, and/or Fe; B''=Cu; 0.01metal oxides.

  17. Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices

    DOE Patents [OSTI]

    Horn, Kevin M.

    2013-07-09T23:59:59.000Z

    A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

  18. Influence of uranium hydride oxidation on uranium metal behaviour

    SciTech Connect (OSTI)

    Patel, N.; Hambley, D. [National Nuclear Laboratory (United Kingdom); Clarke, S.A. [Sellafield Ltd (United Kingdom); Simpson, K.

    2013-07-01T23:59:59.000Z

    This work addresses concerns that the rapid, exothermic oxidation of active uranium hydride in air could stimulate an exothermic reaction (burning) involving any adjacent uranium metal, so as to increase the potential hazard arising from a hydride reaction. The effect of the thermal reaction of active uranium hydride, especially in contact with uranium metal, does not increase in proportion with hydride mass, particularly when considering large quantities of hydride. Whether uranium metal continues to burn in the long term is a function of the uranium metal and its surroundings. The source of the initial heat input to the uranium, if sufficient to cause ignition, is not important. Sustained burning of uranium requires the rate of heat generation to be sufficient to offset the total rate of heat loss so as to maintain an elevated temperature. For dense uranium, this is very difficult to achieve in naturally occurring circumstances. Areas of the uranium surface can lose heat but not generate heat. Heat can be lost by conduction, through contact with other materials, and by convection and radiation, e.g. from areas where the uranium surface is covered with a layer of oxidised material, such as burned-out hydride or from fuel cladding. These rates of heat loss are highly significant in relation to the rate of heat generation by sustained oxidation of uranium in air. Finite volume modelling has been used to examine the behaviour of a magnesium-clad uranium metal fuel element within a bottle surrounded by other un-bottled fuel elements. In the event that the bottle is breached, suddenly, in air, it can be concluded that the bulk uranium metal oxidation reaction will not reach a self-sustaining level and the mass of uranium oxidised will likely to be small in relation to mass of uranium hydride oxidised. (authors)

  19. Synthesis of metal-metal oxide catalysts and electrocatalysts using a metal cation adsorption/reduction and adatom replacement by more noble ones

    DOE Patents [OSTI]

    Adzic, Radoslav; Vukmirovic, Miomir; Sasaki, Kotaro

    2010-04-27T23:59:59.000Z

    The invention relates to platinum-metal oxide composite particles and their use as electrocatalysts in oxygen-reducing cathodes and fuel cells. The invention particularly relates to methods for preventing the oxidation of the platinum electrocatalyst in the cathodes of fuel cells by use of these platinum-metal oxide composite particles. The invention additionally relates to methods for producing electrical energy by supplying such a fuel cell with an oxidant, such as oxygen, and a fuel source, such as hydrogen. The invention also relates to methods of making the metal-metal oxide composites.

  20. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

    SciTech Connect (OSTI)

    Liu, J. W., E-mail: liu.jiangwei@nims.go.jp [International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Liao, M. Y.; Imura, M. [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Watanabe, E.; Oosato, H. [Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Koide, Y., E-mail: koide.yasuo@nims.go.jp [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-08-25T23:59:59.000Z

    A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO{sub 3} layer and a thin atomic-layer-deposited Al{sub 2}O{sub 3} buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be ?40.7?mA·mm{sup ?1}, 13.2?±?0.1?mS·mm{sup ?1}, and ?3.1?±?0.1?V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to ?10.0?V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

  1. For cermet inert anode containing oxide and metal phases useful for the electrolytic production of metals

    DOE Patents [OSTI]

    Ray, Siba P. (Murrysville, PA); Liu, Xinghua (Monroeville, PA); Weirauch, Douglas A. (Murrysville, PA)

    2002-01-01T23:59:59.000Z

    A cermet inert anode for the electrolytic production of metals such as aluminum is disclosed. The inert anode comprises a ceramic phase including an oxide of Ni, Fe and M, where M is at least one metal selected from Zn, Co, Al, Li, Cu, Ti, V, Cr, Zr, Nb, Ta, W, Mo, Hf and rare earths, preferably Zn and/or Co. Preferred ceramic compositions comprise Fe.sub.2 O.sub.3, NiO and ZnO or CoO. The cermet inert anode also comprises a metal phase such as Cu, Ag, Pd, Pt, Au, Rh, Ru, Ir and/or Os. A preferred metal phase comprises Cu and Ag. The cermet inert anodes may be used in electrolytic reduction cells for the production of commercial purity aluminum as well as other metals.

  2. Strengthening of metallic alloys with nanometer-size oxide dispersions

    DOE Patents [OSTI]

    Flinn, John E. (Idaho Falls, ID); Kelly, Thomas F. (Madison, WI)

    1999-01-01T23:59:59.000Z

    Austenitic stainless steels and nickel-base alloys containing, by wt. %, 0.1 to 3.0% V, 0.01 to 0.08% C, 0.01 to 0.5% N, 0.05% max. each of Al and Ti, and 0.005 to 0.10% O, are strengthened and ductility retained by atomization of a metal melt under cover of an inert gas with added oxygen to form approximately 8 nanometer-size hollow oxides within the alloy grains and, when the alloy is aged, strengthened by precipitation of carbides and nitrides nucleated by the hollow oxides. Added strengthening is achieved by nitrogen solid solution strengthening and by the effect of solid oxides precipitated along and pinning grain boundaries to provide temperature-stabilization and refinement of the alloy grains.

  3. Lithium metal oxide electrodes for lithium cells and batteries

    DOE Patents [OSTI]

    Thackeray, Michael M.; Johnson, Christopher S.; Amine, Khalil; Kim, Jaekook

    2006-11-14T23:59:59.000Z

    A lithium metal oxide positive electrode for a non-aqueous lithium cell is disclosed. The cell is prepared in its initial discharged state and has a general formula xLiMO2.(1-x)Li2M'O3 in which 0oxidation state and with at least one ion being Ni, and where M' is one or more ions with an average tetravalent oxidation state. Complete cells or batteries are disclosed with anode, cathode and electrolyte as are batteries of several cells connected in parallel or series or both.

  4. Lithium Metal Oxide Electrodes For Lithium Cells And Batteries

    DOE Patents [OSTI]

    Thackeray, Michael M. (Naperville, IL); Johnson, Christopher S. (Naperville, IL); Amine, Khalil (Downers Grove, IL); Kim, Jaekook (Naperville, IL)

    2004-01-20T23:59:59.000Z

    A lithium metal oxide positive electrode for a non-aqueous lithium cell is disclosed. The cell is prepared in its initial discharged state and has a general formula xLiMO.sub.2.(1-x)Li.sub.2 M'O.sub.3 in which 0oxidation state and with at least one ion being Mn or Ni, and where M' is one or more ion with an average tetravalent oxidation state. Complete cells or batteries are disclosed with anode, cathode and electrolyte as are batteries of several cells connected in parallel or series or both.

  5. Lithium metal oxide electrodes for lithium cells and batteries

    DOE Patents [OSTI]

    Thackeray, Michael M. (Naperville, IL); Johnson, Christopher S. (Naperville, IL); Amine, Khalil (Oakbrook, IL)

    2008-12-23T23:59:59.000Z

    A lithium metal oxide positive electrode for a non-aqueous lithium cell is disclosed. The cell is prepared in its initial discharged state and has a general formula xLiMO.sub.2.(1-x)Li.sub.2M'O.sub.3 in which 0oxidation state and with at least one ion being Mn or Ni, and where M' is one or more ion with an average tetravalent oxidation state. Complete cells or batteries are disclosed with anode, cathode and electrolyte as are batteries of several cells connected in parallel or series or both.

  6. Strengthening of metallic alloys with nanometer-size oxide dispersions

    DOE Patents [OSTI]

    Flinn, J.E.; Kelly, T.F.

    1999-06-01T23:59:59.000Z

    Austenitic stainless steels and nickel-base alloys containing, by wt. %, 0.1 to 3.0% V, 0.01 to 0.08% C, 0.01 to 0.5% N, 0.05% max. each of Al and Ti, and 0.005 to 0.10% O, are strengthened and ductility retained by atomization of a metal melt under cover of an inert gas with added oxygen to form approximately 8 nanometer-size hollow oxides within the alloy grains and, when the alloy is aged, strengthened by precipitation of carbides and nitrides nucleated by the hollow oxides. Added strengthening is achieved by nitrogen solid solution strengthening and by the effect of solid oxides precipitated along and pinning grain boundaries to provide temperature-stabilization and refinement of the alloy grains. 20 figs.

  7. Performance of metal and oxide fuels during accidents in a large liquid metal cooled reactor

    SciTech Connect (OSTI)

    Cahalan, J.; Wigeland, R. (Argonne National Lab., IL (USA)); Friedel, G. (Internationale Atomreaktorbau GmbH (INTERATOM), Bergisch Gladbach (Germany, F.R.)); Kussmaul, G.; Royl, P. (Kernforschungszentrum Karlsruhe GmbH (Germany, F.R.)); Moreau, J. (CEA Centre d'Etudes Nucleaires de Cadarache, 13 - Saint-Paul-lez-Durance (France)); Perks, M. (UKAEA Risley Nuclear Power Development Establishment (UK)

    1990-01-01T23:59:59.000Z

    In a cooperative effort among European and US analysts, an assessment of the comparative safety performance of metal and oxide fuels during accidents in a large (3500 MWt), pool-type, liquid-metal-cooled reactor (LMR) was performed. The study focused on three accident initiators with failure to scram: the unprotected loss-of-flow (ULOF), the unprotected transient overpower (UTOP), and the unprotected loss-of-heat-sink (ULOHS). Emphasis was placed on identification of design features that provide passive, self-limiting responses to upset conditions, and quantification of relative safety margins. The analyses show that in ULOF and ULOHS sequences, metal-fueled LMRs with pool-type primary systems provide larger temperature margins to coolant boiling than oxide-fueled reactors of the same design. 3 refs., 4 figs.

  8. Hydrocracking and hydroisomerization of long-chain alkanes and polyolefins over metal-promoted anion-modified transition metal oxides

    SciTech Connect (OSTI)

    Venkatesh, Koppampatti R.; Hu, Jianli; Tierney, John W.; Wender, Irving

    1996-12-01T23:59:59.000Z

    A method is described for cracking a feedstock by contacting the feedstock with a metal-promoted anion-modified metal oxide catalyst in the presence of hydrogen gas. The metal oxide of the catalyst is one or more of ZrO{sub 2}, HfO{sub 2}, TiO{sub 2} and SnO{sub 2}, and the feedstock is principally chains of at least 20 carbon atoms. The metal-promoted anion-modified metal oxide catalyst contains one or more of Pt, Ni, Pd, Rh, Ir, Ru, (Mn and Fe) or mixtures of them present between about 0.2% to about 15% by weight of the catalyst. The metal-promoted anion-modified metal oxide catalyst contains one or more of SO{sub 4}, WO{sub 3}, or mixtures of them present between about 0.5% to about 20% by weight of the catalyst.

  9. Metal/metal oxide doped oxide catalysts having high deNOx selectivity for lean NOx exhaust aftertreatment systems

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-16T23:59:59.000Z

    A lean NOx catalyst and method of preparing the same is disclosed. The lean NOx catalyst includes a ceramic substrate, an oxide support material, preferably .gamma.-alumina, deposited on the substrate and a metal promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium, cerium, vanadium, oxides thereof, and combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between about 80 to 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  10. Universal alignment of hydrogen levels in semiconductors and insulators

    E-Print Network [OSTI]

    Van de Walle, C G

    2006-01-01T23:59:59.000Z

    including nitride semiconductors and transparent oxides.and C. G. Van de Walle, in Hydrogen in SemiconductorsII, Semiconductors and Semimetals Vol. 61, edited by N. H.

  11. Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals

    SciTech Connect (OSTI)

    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Fruchart, D.; Hlil, E. K. [CNRS, Institute Neel (France); Gladyshevskii, R. E. [Ivan Franko Lviv National University (Ukraine); Gignoux, D. [CNRS, Institute Neel (France); Romaka, V. V.; Kuzhel, B. S. [Ivan Franko Lviv National University (Ukraine); Krayjvskii, R. V. [Lvivska Politechnika National University (Ukraine)

    2010-03-15T23:59:59.000Z

    The crystal structure, density of electron states, electron transport, and magnetic characteristics of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals (R) have been studied in the ranges of temperatures 1.5-400 K, concentrations of rare-earth metal 9.5 x 10{sup 19}-9.5 x 10{sup 21} cm{sup -3}, and magnetic fields H {<=} 15 T. The regions of existence of Zr{sub 1-x}R{sub x}NiSn solid solutions are determined, criteria for solubility of atoms of rare-earth metals in ZrNiSn and for the insulator-metal transition are formulated, and the nature of 'a priori doping' of ZrNiSn is determined as a result of redistribution of Zr and Ni atoms at the crystallographic sites of Zr. Correlation between the concentration of the R impurity, the amplitude of modulation of the bands of continuous energies, and the degree of occupation of potential wells of small-scale fluctuations with charge carriers is established. The results are discussed in the context of the Shklovskii-Efros model of a heavily doped and compensated semiconductor.

  12. Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials

    E-Print Network [OSTI]

    Wheeler, Damon Andreas

    2013-01-01T23:59:59.000Z

    and Photoelectrochemical Properties of Hydrogen-treated TiO2Photoelectrochemical Properties of Hydrogen-Treated TiO 2and ultrafast properties of hydrogen-treated TiO 2 ( H:TiO

  13. Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials

    E-Print Network [OSTI]

    Wheeler, Damon Andreas

    2013-01-01T23:59:59.000Z

    W. Mourad; M. Rophael, Applied Catalysis B: Environmental,M. F. ; Takahashi, T. Applied Catalysis B: Self-assembledreactivity of TiO2. Applied Catalysis B: Environmental Doan,

  14. Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials

    E-Print Network [OSTI]

    Wheeler, Damon Andreas

    2013-01-01T23:59:59.000Z

    electron storage, electrochromic, and photoelectrochromicV. Thin Solid Films Electrochromic and photoelectrochemical

  15. Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials

    E-Print Network [OSTI]

    Wheeler, Damon Andreas

    2013-01-01T23:59:59.000Z

    purity hydrogen gas (Praxair). 5.3.3 Electron Microscopy (purity hydrogen gas (Praxair). 6.3.3 UV-Vis, Electron

  16. Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials

    E-Print Network [OSTI]

    Wheeler, Damon Andreas

    2013-01-01T23:59:59.000Z

    Yang, Z. ; Zhang, R. ; Cheng, Z. ; Elliot, A. M. ; Stafford,C. ; Wei, Z. G. ; Xie, S. G. ; Cheng, Z. J. ; Xiao, C. M. ,

  17. Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials

    E-Print Network [OSTI]

    Wheeler, Damon Andreas

    2013-01-01T23:59:59.000Z

    in hematite derived from goethite. 1979, 29, Li, D. ; Teoh,of Anion Adsorption on Goethite. 1987, 51, 54-56. (126)Amorphous Silica, and Goethite Surfaces. (136) Thimsen, E. ;

  18. Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials

    E-Print Network [OSTI]

    Wheeler, Damon Andreas

    2013-01-01T23:59:59.000Z

    Solar Absorption for Photocatalysis with Black Hydrogenatedof physical Chemistry C Photocatalysis of Ag-Loaded TiO 2Lu, G. ; Yates, J. T. , Photocatalysis on TiO2 Surfaces:

  19. Enzyme Mediated Synthesis of a Semiconducting Metal Oxide

    E-Print Network [OSTI]

    Johnson, John Michael

    2012-01-01T23:59:59.000Z

    Semiconductor photocatalysis………………………………………..…5 Figure 2.1cost photovoltaics and photocatalysis. The motivation behindsensing 2 , heterogeneous photocatalysis 3 , and electrodes

  20. Enhanced Semiconductor Nanocrystal Conductance via Solution Grown Contacts

    E-Print Network [OSTI]

    Sheldon, Matthew T.

    2010-01-01T23:59:59.000Z

    G. ; Avouris, P. , Metal-semiconductor nanocontacts: SiliconIndividual Colloidal Semiconductor Nanorods. Nano Lett 2008,Physical Chemistry of Semiconductor Nanocrystals. J. Phys.

  1. Mechanistic Studies of Charge Injection from Metallic Electrodes into Organic Semiconductors Mediated by Ionic Functionalities: Final Report

    SciTech Connect (OSTI)

    Nguyen, Thuc-Quyen [UCSB; Bazan, Guillermo [UCSB; Mikhailovsky, Alexander [UCSB

    2014-04-15T23:59:59.000Z

    Metal-organic semiconductor interfaces are important because of their ubiquitous role in determining the performance of modern electronics such as organic light emitting diodes (OLEDs), fuel cells, batteries, field effect transistors (FETs), and organic solar cells. Interfaces between metal electrodes required for external wiring to the device and underlying organic structures directly affect the charge carrier injection/collection efficiency in organic-based electronic devices primarily due to the mismatch between energy levels in the metal and organic semiconductor. Environmentally stable and cost-effective electrode materials, such as aluminum and gold typically exhibit high potential barriers for charge carriers injection into organic devices leading to increased operational voltages in OLEDs and FETs and reduced charge extraction in photovoltaic devices. This leads to increased power consumption by the device, reduced overall efficiency, and decreased operational lifetime. These factors represent a significant obstacle for development of next generation of cheap and energy-efficient components based on organic semiconductors. It has been noticed that introduction of organic materials with conjugated backbone and ionic pendant groups known as conjugated poly- and oligoelectrolytes (CPEs and COEs), enables one to reduce the potential barriers at the metal-organic interface and achieve more efficient operation of a device, however exact mechanisms of the phenomenon have not been understood. The goal of this project was to delineate the function of organic semiconductors with ionic groups as electron injection layers. The research incorporated a multidisciplinary approach that encompassed the creation of new materials, novel processing techniques, examination of fundamental electronic properties and the incorporation of the resulting knowledgebase into development of novel organic electronic devices with increased efficiency, environmental stability, and reduced cost. During the execution of the project, main efforts were focused on the synthesis of new charge-bearing organic materials, such as CPEs and COEs, and block copolymers with neutral and ionic segments, studies of mechanisms responsible for the charge injection modulation in devices with ionic interlayers, and use of naturally occurring charged molecules for creation of enhanced devices. The studies allowed PIs to demonstrate the usefulness of the proposed approach for the improvement of operational parameters in model OLED and FET systems resulting in increased efficiency, decreased contact resistance, and possibility to use stable metals for fabrication of device electrodes. The successful proof-of-the-principle results potentially promise development of light-weight, low fabrication cost devices which can be used in consumer applications such as displays, solar cells, and printed electronic devices. Fundamental mechanisms responsible for the phenomena observed have been identified thus advancing the fundamental knowledgebase.

  2. Cyclic catalytic upgrading of chemical species using metal oxide materials

    DOE Patents [OSTI]

    White, James H. (Boulder, CO); Schutte, Erick J. (Thornton, CO); Rolfe, Sara L. (Loveland, CO)

    2010-11-02T23:59:59.000Z

    Processes are disclosure which comprise alternately contacting an oxygen-carrying catalyst with a reducing substance, or a lower partial pressure of an oxidizing gas, and then with the oxidizing gas or a higher partial pressure of the oxidizing gas, whereby the catalyst is alternately reduced and then regenerated to an oxygenated state. In certain embodiments, the oxygen-carrying catalyst comprises at least one metal oxide-containing material containing a composition having one of the following formulas: (a) Ce.sub.xB.sub.yB'.sub.zB''O.sub..delta., wherein B=Ba, Sr, Ca, or Zr; B'=Mn, Co, or Fe; B''=Cu; 0.01

  3. THE MICROSTRUCTURAL LOCATION OF THE INTERGRANULAR METAL OXIDE PHASE IN A ZINC OXIDE VARISTOR

    E-Print Network [OSTI]

    Clarke, D. E

    2011-01-01T23:59:59.000Z

    OXIDE PHASE IN A ZINC OXIDE VARISTOR MICROSI'RUCTIJRALMETAL OXIDE PHASE IN A ZINC OXIDE VARISTOR David R. Clarke

  4. Dilute magnetic semiconductor and half-metal behaviour mediated by 3d transition-metal doped in black/blue phosphorene

    E-Print Network [OSTI]

    Yu, Weiyang; Niu, Chun-Yao; Li, Chong; Cho, Jun-Hyung; Jia, Yu

    2015-01-01T23:59:59.000Z

    Using first-principles calculations, we present a theoretical study of the structural, electronic and magnetic properties of 3d transition metal (TM) atoms interacting with phosphorus monovacancies in two-dimensional black/blue phosphorene. We pay special attention to the magnetic properties of these substitutional impurities and find that they can be fully understood by a simple model based on the Hund's rule. For TM-doped black phosphorene, the calculated band structures of substitutional Ti, Cr, Mn, Fe and Ni impurities show dilute magnetic semiconductor (DMS) properties while those of substitutional Sc, V and Co impurities show nonmagnetic property. For TM-doped blue phosphorene, the calculated band structures of substitutional V, Cr, Mn and Fe impurities show DMS properties, and those of substitutional Ti and Ni impurities show half-metal properties, while Sc and V impurities show nonmagnetic property. We identify three different regimes associated with the occupation of different phosphorus-metal hybrid...

  5. Lithium metal oxide electrodes for lithium cells and batteries

    DOE Patents [OSTI]

    Thackeray, Michael M. (Naperville, IL); Johnson, Christopher S. (Naperville, IL); Amine, Khalil (Downers Grove, IL); Kim, Jaekook (Naperville, IL)

    2004-01-13T23:59:59.000Z

    A lithium metal oxide positive electrode for a non-aqueous lithium cell is disclosed. The cell is prepared in its initial discharged state and has a general formula xLiMO.sub.2.(1-x)Li.sub.2 M'O.sub.3 in which 0

  6. Optical and dielectric characteristics of the rare-earth metal oxide Lu{sub 2}O{sub 3}

    SciTech Connect (OSTI)

    Ordin, S. V., E-mail: stas_ordin@mail.ru; Shelykh, A. I. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2010-05-15T23:59:59.000Z

    The characteristics of the Lu{sub 2}O{sub 3} oxide and their variations controlled by compositional defects are studied. The defects are anion vacancies produced on partial reduction of the oxide. Such defects exhibit features typical of quantum objects and have a profound effect on the optical transmittance spectrum, the character of conduction (insulator or semiconductor properties) and the order of magnitude of the permittivity {epsilon} (capable of varying from 11.2 to 125). The structural features of vacancies in the oxides are considered, and the effect of vacancies on the polarization, conductivity, and lattice vibrations is studied. The studies are carried out in the temperature range 200-900 K, the wavelength range 0.03-50 {mu}m, and the current frequency range 10{sup 2}-10{sup 5} Hz. The rare-earth metal oxides attract interest for applications in microelectronics due to their high permittivity (several times higher than the permittivity of SiO{sub 2}) and, hence, the prospects for use of these oxides instead of SiO{sub 2}.

  7. Inorganic Chemistry Solutions to Semiconductor Nanocrystal Problems

    SciTech Connect (OSTI)

    Alvarado, Samuel R. [Ames Laboratory; Guo, Yijun [Ames Laboratory; Ruberu, T. Purnima A. [Ames Laboratory; Tavasoli, Elham [Ames Laboratory; Vela, Javier [Ames Laboratory

    2014-03-15T23:59:59.000Z

    The optoelectronic and chemical properties of semiconductor nanocrystals heavily depend on their composition, size, shape and internal structure, surface functionality, etc. Available strategies to alter these properties through traditional colloidal syntheses and ligand exchange methods place a premium on specific reaction conditions and surfactant combinations. In this invited review, we apply a molecular-level understanding of chemical precursor reactivity to reliably control the morphology, composition and intimate architecture (core/shell vs. alloyed) of semiconductor nanocrystals. We also describe our work aimed at achieving highly selective, low-temperature photochemical methods for the synthesis of semiconductor–metal and semiconductor–metal oxide photocatalytic nanocomposites. In addition, we describe our work on surface modification of semiconductor nanocrystal quantum dots using new approaches and methods that bypass ligand exchange, retaining the nanocrystal's native ligands and original optical properties, as well as on spectroscopic methods of characterization useful in determining surface ligand organization and chemistry. Using recent examples from our group and collaborators, we demonstrate how these efforts have lead to faster, wider and more systematic application of semiconductor nanocrystal-based materials to biological imaging and tracking, and to photocatalysis of unconventional substrates. We believe techniques and methods borrowed from inorganic chemistry (including coordination, organometallic and solid state chemistry) have much to offer in reaching a better understanding of the synthesis, functionalization and real-life application of such exciting materials as semiconductor nanocrystals (quantum dots, rods, tetrapods, etc.).

  8. Compositional Tuning of Ultrathin Surface Oxides on Metal and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    that the native oxide on 5%Ni-Al alloy is primarily composed of aluminum oxide with no nickel oxide whereas the photon-assisted oxide comprises of both aluminum oxide and nickel...

  9. NANOSTRUCTURED METAL OXIDE CATALYSTS VIA BUILDING BLOCK SYNTHESES

    SciTech Connect (OSTI)

    Craig E. Barnes

    2013-03-05T23:59:59.000Z

    A broadly applicable methodology has been developed to prepare new single site catalysts on silica supports. This methodology requires of three critical components: a rigid building block that will be the main structural and compositional component of the support matrix; a family of linking reagents that will be used to insert active metals into the matrix as well as cross link building blocks into a three dimensional matrix; and a clean coupling reaction that will connect building blocks and linking agents together in a controlled fashion. The final piece of conceptual strategy at the center of this methodology involves dosing the building block with known amounts of linking agents so that the targeted connectivity of a linking center to surrounding building blocks is obtained. Achieving targeted connectivities around catalytically active metals in these building block matrices is a critical element of the strategy by which single site catalysts are obtained. This methodology has been demonstrated with a model system involving only silicon and then with two metal-containing systems (titanium and vanadium). The effect that connectivity has on the reactivity of atomically dispersed titanium sites in silica building block matrices has been investigated in the selective oxidation of phenols to benezoquinones. 2-connected titanium sites are found to be five times as active (i.e. initial turnover frequencies) than 4-connected titanium sites (i.e. framework titanium sites).

  10. High-Performance Solution-Processed Amorphous-Oxide-Semiconductor TFTs with Organic Polymeric Gate Dielectrics

    E-Print Network [OSTI]

    Pecunia, Vincenzo; Banger, Kulbinder; Sirringhaus, Henning

    2015-01-13T23:59:59.000Z

    energy offsets (? 1 eV) between the conduction/valence bands of the semiconductor and the gate dielectric are needed to confine the charge carriers at the active interface and minimize undesirable charge injection from the semiconductor into the gate... in solution, all the other polymers came in the form of pellets or powder and were dissolved in suitable anhydrous organic solvents: P?MS was dissolved in xylene at a concentration of 60 mg mL-1; SAN in butyronitrile at 40 mg mL-1; PC in 1,2-dichlorobenzene...

  11. Stabilization of Electrocatalytic Metal Nanoparticles at Metal...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electrocatalytic Metal Nanoparticles at Metal-Metal Oxide-Graphene Triple Junction Points. Stabilization of Electrocatalytic Metal Nanoparticles at Metal-Metal Oxide-Graphene...

  12. Vehicle Technologies Office Merit Review 2015: Metal Oxide Nano-Array Catalysts for Low Temperature Diesel Oxidation

    Broader source: Energy.gov [DOE]

    Presentation given by U. Conn at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about metal oxide nano-array catalysts for...

  13. Disordered electronic and magnetic systems - transition metal (Mn) and rare earth (Gd) doped amorphous group IV semiconductors (C, Si, Ge)

    E-Print Network [OSTI]

    Zeng, Li

    2007-01-01T23:59:59.000Z

    magnetic semiconductors: the europium chalcogenides. Phys.Classic examples are europium chalcogenides [3], Gd 3?x ? xmagnetic semiconductor europium chalcogenides, where the

  14. Oxidation catalysts comprising metal exchanged hexaaluminate wherein the metal is Sr, Pd, La, and/or Mn

    DOE Patents [OSTI]

    Wickham, David (Boulder, CO); Cook, Ronald (Lakewood, CO)

    2008-10-28T23:59:59.000Z

    The present invention provides metal-exchanged hexaaluminate catalysts that exhibit good catalytic activity and/or stability at high temperatures for extended periods with retention of activity as combustion catalysts, and more generally as oxidation catalysts, that make them eminently suitable for use in methane combustion, particularly for use in natural gas fired gas turbines. The hexaaluminate catalysts of this invention are of particular interest for methane combustion processes for minimization of the generation of undesired levels (less than about 10 ppm) of NOx species. Metal exchanged hexaaluminate oxidation catalysts are also useful for oxidation of volatile organic compounds (VOC), particularly hydrocarbons. Metal exchanged hexaaluminate oxidation catalysts are further useful for partial oxidation, particularly at high temperatures, of reduced species, particularly hydrocarbons (alkanes and alkenes).

  15. Methane-to-Methanol Conversion by Gas-Phase Transition Metal Oxide Cations: Experiment and Theory

    E-Print Network [OSTI]

    Metz, Ricardo B.

    Methane-to-Methanol Conversion by Gas-Phase Transition Metal Oxide Cations: Experiment and Theory-phase transition metal oxide cations can convert methane to methanol. Methane activation by MO+ is discussed such as methanol has attracted great experimental and theoretical interest due to its importance as an industrial

  16. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    SciTech Connect (OSTI)

    Liu, Jun; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2014-09-16T23:59:59.000Z

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  17. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOE Patents [OSTI]

    Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2013-10-22T23:59:59.000Z

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  18. Method of dissolving metal oxides with di- or polyphosphonic acid and a redundant

    DOE Patents [OSTI]

    Horwitz, Earl P. (Argonne, IL); Chiarizia, Renato (Argonne, IL)

    1996-01-01T23:59:59.000Z

    A method of dissolving metal oxides using a mixture of a di- or polyphosphonic acid and a reductant wherein each is present in a sufficient amount to provide a synergistic effect with respect to the dissolution of metal oxides and optionally containing corrosion inhibitors and pH adjusting agents.

  19. Superconductors and Complex Transition Metal Oxides for Tunable THz Plasmonic Metamaterials

    SciTech Connect (OSTI)

    Singh, Ranjan [Los Alamos National Laboratory; Xiong, Jie [Los Alamos National Laboratory; Azad, Md A. [Los Alamos National Laboratory; Yang, Hao [Los Alamos National Laboratory; Trugman, Stuart A. [Los Alamos National Laboratory; Jia, Quanxi [Los Alamos National Laboratory; Taylor, Antoinette [Los Alamos National Laboratory; Chen, Houtong [Los Alamos National Laboratory

    2012-07-13T23:59:59.000Z

    The outline of this presentation are: (1) Motivation - Non-tunability of metal metamaterials; (2) Superconductors for temperature tunable metamaterials; (3) Ultrafast optical switching in superconductor metamaterials; (4) Controlling the conductivity with infrared pump beam; (5) Complex metal oxides as active substrates - Strontium Titanate; and (6) Conclusion. Conclusions are: (1) High Tc superconductors good for tunable and ultrafast metamaterials; (2) Large frequency and amplitude tunability in ultrathin superconductor films; (3) Such tunable properties cannot be accessed using metals; (4) Complex metal oxides can be used as active substrates - large tunability; (5) Complex oxides fail to address the issue of radiation losses in THz metamaterials.

  20. Surface phases and their influence on metal-oxide interfaces. Progress report

    SciTech Connect (OSTI)

    Blakely, J.

    1993-01-01T23:59:59.000Z

    This project is concerned with adsorbed monolayers on metal surfaces and their effects on oxidation kinetics and metal-oxide adhesion; proposed work is a study of metallurgy of 2-dimensional systems with emphasis on binary adsorbed layers. Experimental techniques which can be used include electron diffraction, atomic force and tunneling microscopy, environmental SEM, and secondary electron spectroscopies. Intention is to try to extract information on adsorbate interactions through comparison with model predictions; initially simple pair interaction potentials will be used. Atomic steps on single crystal surfaces, which affect nucleation/growth of overlayers, will be extended to metal oxide systems to form atomic step arrays as preferential sites for surface nucleation of oxides etc. Adsorbed (or segregated) monolayers at metal/oxide interfaces also affect adhesion and further oxidation. S and O adsorption on Ni and NiFe alloy surfaces were studied and are discussed.

  1. Transition metal-catalyzed oxidation of atmospheric sulfur: Global implications for the sulfur budget

    E-Print Network [OSTI]

    Alexander, Becky

    processes, volca- noes) or produced within the atmosphere by oxidation of re- duced sulfur speciesTransition metal-catalyzed oxidation of atmospheric sulfur: Global implications for the sulfur importance of sulfate production by Fe(III)- and Mn(II)-catalyzed oxidation of S(IV) by O2. We scale

  2. ECE 609 Semiconductor Devices Department of Electrical and Computer Engineering

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    ECE 609 ­ Semiconductor Devices Department of Electrical and Computer Engineering University. ________________________________________________________________________ Preliminary Course Outline 1. Overview of Semiconductor Physics 1.1 Semiconductor Materials-V Characteristics, Nonideal Behavior) 2.2 Metal Semiconductor Junctions (Schottky Barriers, Ohmic Contacts) 2

  3. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor-and solar-

    E-Print Network [OSTI]

    Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor- and solar- grade silicon) produced in the United States in 2009 was $470 million. Four companies produced silicon materials in six plants. Of those companies, three produced ferrosilicon in four plants. Metallurgical

  4. 2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012

    SciTech Connect (OSTI)

    GLASER, EVAN

    2012-08-17T23:59:59.000Z

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  5. Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors

    SciTech Connect (OSTI)

    Han, Jaeheon [Department of Electronic Engineering, Kangnam University, 111 Gugal-dong, Giheung-gu, Yongin-city, Gyeonggi-do, Korea 446-702 (Korea, Republic of)

    2011-12-23T23:59:59.000Z

    Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

  6. Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

    SciTech Connect (OSTI)

    Leahu, G. L., E-mail: roberto.livoti@uniroma1.it; Li Voti, R., E-mail: roberto.livoti@uniroma1.it; Larciprete, M. C., E-mail: roberto.livoti@uniroma1.it; Belardini, A., E-mail: roberto.livoti@uniroma1.it; Mura, F., E-mail: roberto.livoti@uniroma1.it; Sibilia, C.; Bertolotti, M. [Dipartimento di Scienze di Base ed Applicate per l'Ingegneria, Sapienza Università di Roma, Via A. Scarpa 16 00161 Roma (Italy); Fratoddi, I. [Dipartimento di Chimica, Sapienza Università di Roma, Piazzale A. Moro, Roma (Italy)

    2014-06-19T23:59:59.000Z

    We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. We have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures.

  7. Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors

    SciTech Connect (OSTI)

    Devynck, M.; Rostirolla, B.; Watson, C. P.; Taylor, D. M., E-mail: d.m.taylor@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean Street, Bangor, Gwynedd LL57 1UT (United Kingdom)

    2014-11-03T23:59:59.000Z

    Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

  8. Regenerable MgO promoted metal oxide oxygen carriers for chemical looping combustion

    DOE Patents [OSTI]

    Siriwardane, Ranjani V.; Miller, Duane D.

    2014-08-19T23:59:59.000Z

    The disclosure provides an oxygen carrier comprised of a plurality of metal oxide particles in contact with a plurality of MgO promoter particles. The MgO promoter particles increase the reaction rate and oxygen utilization of the metal oxide when contacting with a gaseous hydrocarbon at a temperature greater than about 725.degree. C. The promoted oxide solid is generally comprised of less than about 25 wt. % MgO, and may be prepared by physical mixing, incipient wetness impregnation, or other methods known in the art. The oxygen carrier exhibits a crystalline structure of the metal oxide and a crystalline structure of MgO under XRD crystallography, and retains these crystalline structures over subsequent redox cycles. In an embodiment, the metal oxide is Fe.sub.2O.sub.3, and the gaseous hydrocarbon is comprised of methane.

  9. Production of crystalline refractory metal oxides containing colloidal metal precipitates and useful as solar-effective absorbers

    DOE Patents [OSTI]

    Narayan, Jagdish (Knoxville, TN); Chen, Yok (Oak Ridge, TN)

    1983-01-01T23:59:59.000Z

    This invention is a new process for producing refractory crystalline oxides having improved or unusual properties. The process comprises the steps of forming a doped-metal crystal of the oxide; exposing the doped crystal in a bomb to a reducing atmosphere at superatmospheric pressure and a temperature effecting precipitation of the dopant metal in the crystal lattice of the oxide but insufficient to effect net diffusion of the metal out of the lattice; and then cooling the crystal. Preferably, the cooling step is effected by quenching. The process forms colloidal precipitates of the metal in the oxide lattice. The process may be used, for example, to produce thermally stable black MgO crystalline bodies containing magnetic colloidal precipitates consisting of about 99% Ni. The Ni-containing bodies are solar-selective absorbers, having a room-temperature absorptivity of about 0.96 over virtually all of the solar-energy spectrum and exhibiting an absorption edge in the region of 2 .mu.m. The process parameters can be varied to control the average size of the precipitates. The process can produce a black MgO crystalline body containing colloidal Ni precipitates, some of which have the face-centered-cubic structure and others of which have the body-centered cubic structure. The products of the process are metal-precipitate-containing refractory crystalline oxides which have improved or unique optical, mechanical, magnetic, and/or electronic properties.

  10. Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures

    DOE Patents [OSTI]

    Sunkara, Mahendra Kumar (Louisville, KY); Vaddiraju, Sreeram (Mountain View, CA); Mozetic, Miran (Ljubljan, SI); Cvelbar, Uros (Idrija, SI)

    2009-09-22T23:59:59.000Z

    A process for the rapid synthesis of metal oxide nanoparticles at low temperatures and methods which facilitate the fabrication of long metal oxide nanowires. The method is based on treatment of metals with oxygen plasma. Using oxygen plasma at low temperatures allows for rapid growth unlike other synthesis methods where nanomaterials take a long time to grow. Density of neutral oxygen atoms in plasma is a controlling factor for the yield of nanowires. The oxygen atom density window differs for different materials. By selecting the optimal oxygen atom density for various materials the yield can be maximized for nanowire synthesis of the metal.

  11. Low temperature production of large-grain polycrystalline semiconductors

    DOE Patents [OSTI]

    Naseem, Hameed A. (Fayetteville, AR); Albarghouti, Marwan (Loudonville, NY)

    2007-04-10T23:59:59.000Z

    An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

  12. Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films

    SciTech Connect (OSTI)

    Sagunova, I. V., E-mail: pcfme@miee.ru; Shevyakov, V. I.; Gavrilov, S. A.; Belov, A. N. [Moscow Institute of Electronic Technology (Technical University) (Russian Federation)

    2010-12-15T23:59:59.000Z

    The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation.

  13. Alkane oxidation with porphyrins and metal complexes thereof having haloalkyl side chains

    DOE Patents [OSTI]

    Wijesekera, T.; Lyons, J.E.; Ellis, P.E. Jr.; Bhinde, M.V.

    1998-06-23T23:59:59.000Z

    Transition metal complexes of meso-haloalkylporphyrins are disclosed, wherein the haloalkyl groups contain 2 to 8 carbon atoms have been found to be highly effective catalysts for oxidation of alkanes and for the decomposition of hydroperoxides. 7 figs.

  14. Alkane oxidation with porphyrins and metal complexes thereof having haloalkyl side chains

    DOE Patents [OSTI]

    Wijesekera, Tilak (Glen Mills, PA); Lyons, James E. (Wallingford, PA); Ellis, Jr., Paul E. (Downingtown, PA); Bhinde, Manoj V. (Boothwyn, PA)

    1998-01-01T23:59:59.000Z

    Transition metal complexes of meso-haloalkylporphyrins, wherein the haloalkyl groups contain 2 to 8 carbon atoms have been found to be highly effective catalysts for oxidation of alkanes and for the decomposition of hydroperoxides.

  15. Thermal and Physical Properties of Plutonium Dioxide Produced from the Oxidation of Metal: a Data Summary

    SciTech Connect (OSTI)

    Wayne, David M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2014-01-13T23:59:59.000Z

    The ARIES Program at the Los Alamos National Laboratory removes plutonium metal from decommissioned nuclear weapons, and converts it to plutonium dioxide in a specially-designed Direct Metal Oxidation furnace. The plutonium dioxide is analyzed for specific surface area, particle size distribution, and moisture content. The purpose of these analyses is to certify that the plutonium dioxide powder meets or exceeds the specifications of the end-user, and the specifications for the packaging and transport of nuclear materials. Analytical results from plutonium dioxide from ARIES development activities, from ARIES production activities, from muffle furnace oxidation of metal, and from metal that was oxidized over a lengthy time interval in air at room temperature, are presented. The processes studied produce plutonium dioxide powder with distinct differences in measured properties, indicating the significant influence of oxidation conditions on physical properties.

  16. Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films

    E-Print Network [OSTI]

    Osedach, Timothy P.

    We demonstrate a near-infrared photodetector that consists of a thin film of the J-aggregating cyanine dye, U3, and transparent metal-oxide charge transport layers. The high absorption coefficient of the U3 film, combined ...

  17. Investigation of zinc oxide doped with metal impurities for use as thin film conductive phosphors

    E-Print Network [OSTI]

    Evatt, Steven R.

    1994-01-01T23:59:59.000Z

    . Illustration of planar field emission diode developed by Weichold et al. . . . . . 48 Fig. 29. I-V data from vacuum field emission light emitting diode structure, after Williams, 1994. . . . . . . . . . 49 Fig. 30. Illustration of the oxidized porous silicon... carriers into a forward biased p-n junction will result in light emission if radiative transitions take place [3]. These semiconductors find applications in light emitting diodes. Other phosphors will produce light emission when they are placed...

  18. Light induced instability mechanism in amorphous InGaZn oxide semiconductors

    SciTech Connect (OSTI)

    Robertson, John; Guo, Yuzheng [Department of Engineering, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

    2014-04-21T23:59:59.000Z

    A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation.

  19. Synthesis of high T.sub.C superconducting coatings and patterns by melt writing and oxidation of metallic precursor alloys

    DOE Patents [OSTI]

    Gao, Wei (Somerville, MA); Vander Sande, John B. (Newbury, MA)

    1998-01-01T23:59:59.000Z

    A method is provided for fabrication of superconducting oxides and superconducting oxide composites and for joining superconductors to other materials. A coating of a molten alloy containing the metallic elements of the oxide is applied to a substrate surface and oxidized to form the superconducting oxide. A material can be contacted to the molten alloy which is subsequently oxidized joining the material to the resulting superconducting oxide coating. Substrates of varied composition and shape can be coated or joined by this method.

  20. Surfactant Organic Molecules Restore Magnetism in Metal-Oxide Nanoparticle Surfaces

    E-Print Network [OSTI]

    Pennycook, Steve

    acid and the nanoparticles would prevent further oxidation to Fe2O3, which could be detrimental functional calculations, we establish the key role of the nonmagnetic organic acid cappiSurfactant Organic Molecules Restore Magnetism in Metal-Oxide Nanoparticle Surfaces Juan Salafranca

  1. ERDC/ELTR-11-9 Evaluation of Metals Release from Oxidation

    E-Print Network [OSTI]

    US Army Corps of Engineers

    ERDC/ELTR-11-9 Evaluation of Metals Release from Oxidation of Fly Ash during Dredging of the Emory Oxidation of Fly Ash during Dredging of the Emory River, TN Jeffery A. Steevens, Anthony J. Bednar, Mark A 22, 2008 and the subsequent dredging operations to remove the fly ash from the Emory River. Fly ash

  2. Analytica Chimica Acta 573574 (2006) 913 Metal oxide thin films as sensing layers for ozone detection

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    Analytica Chimica Acta 573­574 (2006) 9­13 Metal oxide thin films as sensing layers for ozone. Their structural, electrical and ozone sensing properties were analyzed. Structural investigations carried out with ultraviolet light and subsequent oxidation in ozone atmosphere at room temperature. © 2006 Elsevier B.V. All

  3. PHYSICAL REVIEW B 83, 115329 (2011) Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001)

    E-Print Network [OSTI]

    Garfunkel, Eric

    PHYSICAL REVIEW B 83, 115329 (2011) Diffusion and interface growth in hafnium oxide and silicate­oxide­semiconductor (CMOS) technology necessary.1,2 Transition metal (Hf, Zr, La) oxides, silicates, and ternary Hf to be desirable to have at least one monolayer of SiO2 at the dielectric/Si interface. The Hf oxide (silicate

  4. Oxide-based method of making compound semiconductor films and making related electronic devices

    DOE Patents [OSTI]

    Kapur, Vijay K. (Tarzana, CA); Basol, Bulent M. (Manhattan Beach, CA); Leidholm, Craig R. (Woodland Hills, CA); Roe, Robert A. (Glendale, CA)

    2000-01-01T23:59:59.000Z

    A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The oxide-containing particles may include a dopant, as may the compound film. Compound films including a Group IIB-IVA-VA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

  5. Calculation of semiconductor band gaps with the M06-L density functional Yan Zhao and Donald G. Truhlara

    E-Print Network [OSTI]

    Truhlar, Donald G

    2009 The performance of the M06-L density functional has been tested for band gaps in seven,13 that is designed for main group thermo- chemistry, transition metal bonding, thermochemical kinet- ics in group-4, group 3­5, and metal oxide semiconductors. In Sec. II, we describe the test sets

  6. Electronically conducting metal oxide nanoparticles and films for optical sensing applications

    SciTech Connect (OSTI)

    Ohodnicki, Jr., Paul R.; Wang, Congjun; Andio, Mark A

    2014-09-16T23:59:59.000Z

    The disclosure relates to a method of detecting a change in a chemical composition by contacting a conducting oxide material with a monitored stream, illuminating the conducting oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The conducting metal oxide has a carrier concentration of at least 10.sup.17/cm.sup.3, a bandgap of at least 2 eV, and an electronic conductivity of at least 10.sup.-1 S/cm, where parameters are specified at the gas stream temperature. The optical response of the conducting oxide materials is proposed to result from the high carrier concentration and electronic conductivity of the conducting metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration and electronic conductivity. These changes in effective carrier densities and electronic conductivity of conducting metal oxide films and nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary conducting metal oxides include but are not limited to Al-doped ZnO, Sn-doped In.sub.2O.sub.3, Nb-doped TiO.sub.2, and F-doped SnO.sub.2.

  7. Plasmonic transparent conducting metal oxide nanoparticles and films for optical sensing applications

    DOE Patents [OSTI]

    Ohodnicki, Jr., Paul R; Wang, Congjun; Andio, Mark A

    2014-01-28T23:59:59.000Z

    The disclosure relates to a method of detecting a change in a chemical composition by contacting a doped oxide material with a monitored stream, illuminating the doped oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The doped metal oxide has a carrier concentration of at least 10.sup.18/cm.sup.3, a bandgap of at least 2 eV, and an electronic conductivity of at least 10.sup.1 S/cm, where parameters are specified at a temperature of 25.degree. C. The optical response of the doped oxide materials results from the high carrier concentration of the doped metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration. These changes in effective carrier densities of conducting metal oxide nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary doped metal oxides include but are not limited to Al-doped ZnO, Sn-doped In.sub.2O.sub.3, Nb-doped TiO.sub.2, and F-doped SnO.sub.2.

  8. Metal oxide/organic interface investigations for photovoltaic devices

    E-Print Network [OSTI]

    Pachoumi, Olympia

    2014-10-07T23:59:59.000Z

    organic photovoltaics is investigated. We show that using these ternary oxides can lead to superior devices by: prevent- ing a dipole forming between the oxide and the active organic layer in a model ZnMO / P3HT:PCBM OPV as well as lead to improved surface...

  9. Method of nitriding, carburizing, or oxidizing refractory metal articles using microwaves

    DOE Patents [OSTI]

    Holcombe, Cressie E. (Knoxville, TN); Dykes, Norman L. (Oak Ridge, TN); Tiegs, Terry N. (Lenoir City, TN)

    1992-01-01T23:59:59.000Z

    A method of nitriding an article of refractory-nitride-forming metal or metalloids. A consolidated metal or metalloid article is placed inside a microwave oven and nitrogen containing gas is introduced into the microwave oven. The metal or metalloid article is heated to a temperature sufficient to react the metal or metalloid with the nitrogen by applying a microwave energy within the microwave oven. The metal or metalloid article is maintained at that temperature for a period of time sufficient to convert the article of metal or metalloid to an article of refractory nitride. in addition, a method of applying a coating, such as a coating of an oxide, a carbide, or a carbo-nitride, to an article of metal or metalloid by microwave heating.

  10. Fabrication of superconducting metal-oxide textiles by heating impregnated polymeric material in a weakly oxidizing atmosphere

    SciTech Connect (OSTI)

    Van den Sype, J.S.

    1993-07-13T23:59:59.000Z

    A process is described for producing crystalline fibers, textiles or shapes comprised of YBa[sub 2]Cu[sub 3]O[sub 7[minus]x] where x varies from about 0 to about 0.4, said process comprising: (a) impregnating a preformed organic polymeric material with three metal compounds to provide metal elements in said material in substantially the atomic ratio occurring in said YBa[sub 2]Cu[sub 3]O[sub 7[minus]x]; (b) heating said impregnated material in a weakly oxidizing atmosphere containing from about 0.05% to about 2% oxygen by volume to a temperature sufficiently high to at least partially pyrolize and oxidize said organic material and at least partially oxidize said metal compounds substantially without ignition of said organic material and without formation of a molten phase or reaching a decomposition temperature of said YBa[sub 2]Cu[sub 3]O[sub 7[minus]x]; and (c) cooling the resulting material in at least a moderately oxidizing atmosphere to room temperature so as to obtain said fibers, textiles or shapes.

  11. Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films

    E-Print Network [OSTI]

    Cascales, J P; Diaz, D; Rodrigo, J A; Aliev, F G

    2014-01-01T23:59:59.000Z

    The time dependent transient lateral photovoltaic e?ect has been studied with us time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21 nm thick, 5, 10 and 20 um wide and 1500 um long Co lines grown over naturally passivated p-type Si (100). We have observed a nearly linear dependence of the transitorial response with the laser spot position. A transitorial response with a sign change in the laser-off stage has been corroborated by numerical simulations. A qualitative explanation suggests a modi?cation of the drift-diffusion model by including the in uence of a local inductance. Our ?ndings indicate that the microstructuring of position sensitive detectors could improve their space-time resolution.

  12. area metal-oxide-semiconductor electron: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    scale resolution. Parallel data capture can lead to real Marks, Laurence D. 122 tight environment high radiation area Physics Websites Summary: , no active electronics ...

  13. Anodic Aluminum Oxide Templated Channel Electrodes via Atomic Layer A. B. F. Martinsona,b

    E-Print Network [OSTI]

    60439, USA Dye-sensitized solar cells (DSSCs) utilize high surface area metal oxide sintered particle aluminum oxide membranes via atomic layer deposition. Introduction Dye sensitized solar cells (DSSCs) These photoelectrochemical cells use molecular dyes to sensitize high area, wide band gap semiconductor oxide photoanodes

  14. Surface Oxidation and Dissolution of Metal Nanocatalysts in Acid Medium

    E-Print Network [OSTI]

    Callejas-Tovar, Juan

    2012-10-19T23:59:59.000Z

    to study the degradation and dealloying in nanocatalysts. The results on the degradation of Pt nanoparticles under different potential regimes demonstrate that the dissolution depends on the potential path to which the nanocatalyst is exposed. Metal atoms...

  15. Band gap tuning in transition metal oxides by site-specific substitution

    DOE Patents [OSTI]

    Lee, Ho Nyung; Chisholm, Jr., Matthew F; Jellison, Jr., Gerald Earle; Singh, David J; Choi, Woo Seok

    2013-12-24T23:59:59.000Z

    A transition metal oxide insulator composition having a tuned band gap includes a transition metal oxide having a perovskite or a perovskite-like crystalline structure. The transition metal oxide includes at least one first element selected form the group of Bi, Ca, Ba, Sr, Li, Na, Mg, K, Pb, and Pr; and at least one second element selected from the group of Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Hf, Ta, W, Re, Os, Ir, and Pt. At least one correlated insulator is integrated into the crystalline structure, including REMO.sub.3, wherein RE is at least one Rare Earth element, and wherein M is at least one element selected from the group of Co, V, Cr, Ni, Mn, and Fe. The composition is characterized by a band gap of less of 4.5 eV.

  16. Mesoporous metal oxide microsphere electrode compositions and their methods of making

    DOE Patents [OSTI]

    Parans Paranthaman, Mariappan; Bi, Zhonghe; Bridges, Craig A; Brown, Gilbert M

    2014-12-16T23:59:59.000Z

    Compositions and methods of making are provided for treated mesoporous metal oxide microspheres electrodes. The compositions comprise (a) microspheres with an average diameter between 200 nanometers (nm) and 10 micrometers (.mu.m); (b) mesopores on the surface and interior of the microspheres, wherein the mesopores have an average diameter between 1 nm and 50 nm and the microspheres have a surface area between 50 m.sup.2/g and 500 m.sup.2/g, and wherein the composition has an electrical conductivity of at least 1.times.10.sup.-7 S/cm at 25.degree. C. and 60 MPa. The methods of making comprise forming a mesoporous metal oxide microsphere composition and treating the mesoporous metal oxide microspheres by at least one method selected from the group consisting of: (i) annealing in a reducing atmosphere, (ii) doping with an aliovalent element, and (iii) coating with a coating composition.

  17. Determination of Interfacial Adhesion Strength between Oxide Scale and Substrate for Metallic SOFC Interconnects

    SciTech Connect (OSTI)

    Sun, Xin; Liu, Wenning N.; Stephens, Elizabeth V.; Khaleel, Mohammad A.

    2008-01-21T23:59:59.000Z

    The interfacial adhesion strength between the oxide scale and the substrate is crucial to the reliability and durability of metallic interconnects in SOFC operating environments. It is necessary, therefore, to establish a methodology to quantify the interfacial adhesion strength between the oxide scale and the metallic interconnect substrate, and furthermore to design and optimize the interconnect material as well as the coating materials to meet the design life of an SOFC system. In this paper, we present an integrated experimental/analytical methodology for quantifying the interfacial adhesion strength between oxide scale and a ferritic stainless steel interconnect. Stair-stepping indentation tests are used in conjunction with subsequent finite element analyses to predict the interfacial strength between the oxide scale and Crofer 22 APU substrate.

  18. Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy

    DOE Patents [OSTI]

    Chambers, Scott A.

    2006-02-21T23:59:59.000Z

    A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fluxes are individually controlled at the substrate so as to grow the spinel-structured metal oxide on the substrate and the metal oxide is substantially in a thermodynamically stable state during the growth of the metal oxide. A particular embodiment of the present invention encompasses a method of making a spinel-structured binary ferrite, including Co ferrite, without the need of a post-growth anneal to obtain the desired equilibrium state.

  19. Structure formation upon reactive direct current magnetron sputtering of transition metal oxide films

    SciTech Connect (OSTI)

    Ngaruiya, J.M.; Kappertz, O.; Mohamed, S.H.; Wuttig, M. [I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen, Germany and Jomo Kenyatta University of Agriculture and Technology, Box 62000 Nairobi (Kenya); I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen (Germany)

    2004-08-02T23:59:59.000Z

    A comparative study of reactive direct current magnetron sputtering for different transition metal oxides reveals crystalline films at room temperature for group 4 and amorphous films for groups 5 and 6. This observation cannot be explained by the known growth laws and is attributed to the impact of energetic particles, originating from the oxidized target, on the growing film. This scenario is supported by measured target characteristics, the evolution of deposition stress of the films, and the observed backsputtering.

  20. Noble Metal Catalysts for Mercury Oxidation in Utility Flue Gas: Gold, Palladium and Platinum Formulations

    SciTech Connect (OSTI)

    Presto, A.A.; Granite, E.J

    2008-07-01T23:59:59.000Z

    The use of noble metals as catalysts for mercury oxidation in flue gas remains an area of active study. To date, field studies have focused on gold and palladium catalysts installed at pilot scale. In this article, we introduce bench-scale experimental results for gold, palladium and platinum catalysts tested in realistic simulated flue gas. Our initial results reveal some intriguing characteristics of catalytic mercury oxidation and provide insight for future research into this potentially important process.

  1. OPTI 240: Semiconductor Physics and Lasers Instructor: Mahmoud Fallahi

    E-Print Network [OSTI]

    Arizona, University of

    OPTI 240: Semiconductor Physics and Lasers Instructor: Mahmoud Fallahi fallahi@optics.arizona.edu Spring Semester Introduction to Semiconductor Optoelectronic Introduction to quantum mechanics: Energy exclusion principle Metal, Insulator, Semiconductor Conduction band, valance band, energy gap Electrons

  2. Low temperature formation of electrode having electrically conductive metal oxide surface

    DOE Patents [OSTI]

    Anders, Simone (Albany, CA); Anders, Andre (Albany, CA); Brown, Ian G. (Berkeley, CA); McLarnon, Frank R. (Orinda, CA); Kong, Fanping (Berkeley, CA)

    1998-01-01T23:59:59.000Z

    A low temperature process is disclosed for forming metal suboxides on substrates by cathodic arc deposition by either controlling the pressure of the oxygen present in the deposition chamber, or by controlling the density of the metal flux, or by a combination of such adjustments, to thereby control the ratio of oxide to metal in the deposited metal suboxide coating. The density of the metal flux may, in turn, be adjusted by controlling the discharge current of the arc, by adjusting the pulse length (duration of on cycle) of the arc, and by adjusting the frequency of the arc, or any combination of these parameters. In a preferred embodiment, a low temperature process is disclosed for forming an electrically conductive metal suboxide, such as, for example, an electrically conductive suboxide of titanium, on an electrode surface, such as the surface of a nickel oxide electrode, by such cathodic arc deposition and control of the deposition parameters. In the preferred embodiment, the process results in a titanium suboxide-coated nickel oxide electrode exhibiting reduced parasitic evolution of oxygen during charging of a cell made using such an electrode as the positive electrode, as well as exhibiting high oxygen overpotential, resulting in suppression of oxygen evolution at the electrode at full charge of the cell.

  3. Metal regeneration of iron chelates in nitric oxide scrubbing

    DOE Patents [OSTI]

    Chang, Shih-Ger (El Cerrito, CA); Littlejohn, David (Oakland, CA); Shi, Yao (Berkeley, CA)

    1997-08-19T23:59:59.000Z

    The present invention relates to a process of using metal particles to reduce NO to NH.sub.3. More specifically, the invention concerns an improved process to regenerate iron (II) (CHELATE) by reduction of iron (II) (CHELATE) (NO) complex, which process comprises: a) contacting an aqueous solution containing iron (II) (CHELATE) (NO) with metal particles at between about 20.degree. and 90.degree. C. to reduce NO present, produce ammonia or an ammonium ion, and produce free iron (II) (CHELATE) at a pH of between about 3 and 8. The process is useful to remove NO from flue gas and reduce pollution.

  4. Metal regeneration of iron chelates in nitric oxide scrubbing

    DOE Patents [OSTI]

    Chang, S.G.; Littlejohn, D.; Shi, Y.

    1997-08-19T23:59:59.000Z

    The present invention relates to a process of using metal particles to reduce NO to NH{sub 3}. More specifically, the invention concerns an improved process to regenerate iron (II) (CHELATE) by reduction of iron (II) (CHELATE) (NO) complex, which process comprises: (a) contacting an aqueous solution containing iron (II) (CHELATE) (NO) with metal particles at between about 20 and 90 C to reduce NO present, produce ammonia or an ammonium ion, and produce free iron (II) (CHELATE) at a pH of between about 3 and 8. The process is useful to remove NO from flue gas and reduce pollution. 34 figs.

  5. Novel application of the CORAL software to model cytotoxicity of metal oxide nanoparticles to bacteria Escherichia coli

    E-Print Network [OSTI]

    Gini, Giuseppina

    Novel application of the CORAL software to model cytotoxicity of metal oxide nanoparticles 39217, USA h i g h l i g h t s " The CORAL software for the building up of QSPR/QSAR models is suggested. " The CORAL model for cytotoxicity of metal oxide nanoparticles is demonstrated. " The model is a mathematical

  6. Tuning the Bias Sensing Layer: A New Way to Greatly Improve Metal-Oxide Gas Sensors Selectivity

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    layer of resistive Metal-Oxide (MOX) sensors toward gases have been investigated. The behavior of a WO3 is kept constant, it has been found that tuning the polarization of the MOX layer induces changes on its the selectivity of MOX sensors. Keywords : Gas Sensor, Metal Oxide, Temperature-modulated, Bias-modulated I

  7. Process for making surfactant capped metal oxide nanocrystals, and products produced by the process

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Rockenberger, Joerg

    2006-01-10T23:59:59.000Z

    Disclosed is a process for making surfactant capped nanocrystals of metal oxides which are dispersable in organic solvents. The process comprises decomposing a metal cupferron complex of the formula MXCupX, wherein M is a metal, and Cup is a N-substituted N-Nitroso hydroxylamine, in the presence of a coordinating surfactant, the reaction being conducted at a temperature ranging from about 150 to about 400.degree. C., for a period of time sufficient to complete the reaction. Also disclosed are compounds made by the process.

  8. Metal-semiconductor-transition observed in Bi{sub 2}Ca(Sr, Ba){sub 2}Co{sub 2}O{sub 8+?} single crystals

    SciTech Connect (OSTI)

    Dong, Song-Tao [National Laboratory of Solid State Microstructures and Department of Material Science and Engineering, Nanjing University, Nanjing 210093 (China); Institute of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003 (China); Zhang, Bin-Bin; Zhang, Lun-Yong; Yao, Shu-Hua, E-mail: ybchen@nju.edu.cn, E-mail: shyao@nju.edu.cn; Zhou, Jian; Zhang, Shan-Tao; Gu, Zheng-Bin; Chen, Yan-Feng [National Laboratory of Solid State Microstructures and Department of Material Science and Engineering, Nanjing University, Nanjing 210093 (China); Chen, Y. B., E-mail: ybchen@nju.edu.cn, E-mail: shyao@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

    2014-07-28T23:59:59.000Z

    Electrical property evolution of Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+?} single crystals (AE?=?Ca, Sr and Ba) is systematically explored. When AE changes from Ca to Ba, the electrical property of Bi{sub 2}Ca{sub 2}Co{sub 2}O{sub 8+?} and Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+?} demonstrates semiconductor-like properties. But Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} shows the metallic behavior. Analysis of temperature-dependent resistance substantiates that from metallic Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} to semiconductor-like Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+?} can be attributed to Anderson localization. However the semiconductor behaviour of Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+?} and Bi{sub 2}Ca{sub 2}Co{sub 2}O{sub 8+?} is related to electronic correlations effect that is inferred by large negative magnetoresistance (?70%). The theoretical electronic structures and valence X-ray photoemission spectroscopy substantiate that there is a relative large density of state around Fermi level in Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} compared with other two compounds. It suggests that Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+?} is more apt to be metal in this material system.

  9. Mercury Removal from Aqueous Systems Using Commercial and Laboratory Prepared Metal Oxide Nanoparticles 

    E-Print Network [OSTI]

    Desai, Ishan

    2010-10-12T23:59:59.000Z

    Five commercial metal oxide nanoparticles (CuO, SiO2, Fe2O3, TiO2 and Al2O3) have been individually screened for mercury removal in a batch reactor under bicarbonate buffered and non-buffered aqueous solutions (DI water). ...

  10. AC conductivity of nanoporous metal-oxide photoanodes for solar energy conversion

    E-Print Network [OSTI]

    Konezny, Steven J.

    AC conductivity of nanoporous metal-oxide photoanodes for solar energy conversion Steven J. Konezny% solar-to-electric energy conversion efficiency) exploited the large surface area of nanoporous thin for solar photoconversion is analyzed using a model based on fluctuation-induced tunneling conduction (FITC

  11. Electrochromic nickel oxide simultaneously doped with lithium and a metal dopant

    DOE Patents [OSTI]

    Gillaspie, Dane T; Weir, Douglas G

    2014-04-01T23:59:59.000Z

    An electrochromic device comprising a counter electrode layer comprised of lithium metal oxide which provides a high transmission in the fully intercalated state and which is capable of long-term stability, is disclosed. Methods of making an electrochromic device comprising such a counter electrode are also disclosed.

  12. Solution-mediated strategies for synthesizing metal oxides, borates and phosphides using nanocrystals as reactive precursors

    E-Print Network [OSTI]

    Henkes, Amanda Erin

    2009-05-15T23:59:59.000Z

    and phosphides using nanocrystalline precursors and solution-mediated techniques. Broadly, the strategies involve either 1) the formation of a nano-sized precursor in solution which is post-annealed after isolation to form a target metal oxide or borate or 2...

  13. Evaluation of Novel Ceria-Supported Metal Oxides As Oxygen Carriers for Chemical-Looping Combustion

    E-Print Network [OSTI]

    Azad, Abdul-Majeed

    for copper-based materials, and at 950 °C for iron- and manganese-based materials. Methane or syngas (50% COEvaluation of Novel Ceria-Supported Metal Oxides As Oxygen Carriers for Chemical-Looping Combustion of Chemical and Biological Engineering, Chalmers University of Technology, SE-412 96 Goteborg, Sweden

  14. High density adsorbed oxygen on Rh,,111... and enhanced routes to metallic oxidation using atomic oxygen

    E-Print Network [OSTI]

    Sibener, Steven

    High density adsorbed oxygen on Rh,,111... and enhanced routes to metallic oxidation using atomic oxygen K. D. Gibson, Mark Viste, Errol C. Sanchez, and S. J. Sibener The James Franck Institute; accepted 30 November 1998 Exposure of Rh 111 to atomic oxygen leads to the facile formation of a full

  15. ANALYSIS OF THE ELECTRON EXCITATION SPECTRA IN HEAVY RARE EARTH METALS, HYDRIDES AND OXIDES

    E-Print Network [OSTI]

    Boyer, Edmond

    397 ANALYSIS OF THE ELECTRON EXCITATION SPECTRA IN HEAVY RARE EARTH METALS, HYDRIDES AND OXIDES C thin evaporated foils of heavy rare earths (Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) in three different chemical of high energy incident electrons (75 keV) transmitted through thin foils of yttric rare earth elements

  16. Oxidative stress in pied flycatcher (Ficedula hypoleuca) nestlings from metal contaminated environments in northern Sweden

    SciTech Connect (OSTI)

    Berglund, A.M.M. [Department of Ecology and Environmental Science, Umea University, SE-901 87 Umea (Sweden)], E-mail: asa.berglund@emg.umu.se; Sturve, J.; Foerlin, L. [Department of Zoology, Goeteborg University, Box 463, SE-405 30 Gothenburg (Sweden); Nyholm, N.E.I. [Department of Ecology and Environmental Science, Umea University, SE-901 87 Umea (Sweden)

    2007-11-15T23:59:59.000Z

    Metals have been shown to induce oxidative stress in animals. One of the most metal polluted terrestrial environments in Sweden is the surroundings of a sulfide ore smelter plant located in the northern part of the country. Pied flycatcher nestlings (Ficedula hypoleuca) that grew up close to the industry had accumulated amounts of arsenic, cadmium, mercury, lead, iron and zinc in their liver tissue. The aim of this study was to investigate if pied flycatcher nestlings in the pollution gradient of the industry were affected by oxidative stress using antioxidant molecules and enzyme activities. The antioxidant assays were also evaluated in search for useful biomarkers in pied flycatchers. This study indicated that nestlings in metal contaminated areas showed signs of oxidative stress evidenced by up regulated hepatic antioxidant defense given as increased glutathione reductase (GR) and catalase (CAT) activities and slightly but not significantly elevated lipid peroxidation and glutathione-S-transferase (GST) activities. Stepwise linear regression indicated that lipid peroxidation and CAT activities were influenced mostly by iron, but iron and lead influenced the CAT activity to a higher degree. Positive relationships were found between GST and lead as well as GR activities and cadmium. We conclude that GR, CAT, GST activities and lipid peroxidation levels may function as useful biomarkers for oxidative stress in free-living pied flycatcher nestlings exposed to metal contaminated environments.

  17. Criteria for Preparing and Packaging Plutonium Metals and Oxides for Long-Term Storage

    SciTech Connect (OSTI)

    NONE

    1994-12-01T23:59:59.000Z

    This Standard provides criteria for packaging of plutonium metals and stabilized oxides for storage periods of at least 50 years. To meet the criteria, plutonium-bearing materials must be in stable forms and be packaged in containers designed to maintain their integrity both under normal storage conditions and during anticipated handling accidents.

  18. Ternary Self-Assembly of Ordered Metal Oxide Graphene Nanocomposites for

    E-Print Network [OSTI]

    Aksay, Ilhan A.

    Ternary Self-Assembly of Ordered Metal Oxide Graphene Nanocomposites for Electrochemical Energy-assembled nanostructures, but success has been lim- ited to two-phase organic/inorganic hybrid materials, nanoparticles, or polymer-based nanocomposites.4,5,16,17 Recently, a range of nanoscale building blocks, including carbon

  19. Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO{sub 2} thin films

    SciTech Connect (OSTI)

    Brassard, D.; Fourmaux, S.; Jean-Jacques, M.; Kieffer, J.C.; El Khakani, M. A. [Institut National de la Recherche Scientifique, INRS-Energie, Materiaux et Telecommunications, 1650, Boulevard Lionel-Boulet, C.P. 1020, Varennes, Quebec, J3X 1S2 (Canada)

    2005-08-01T23:59:59.000Z

    Single-phase vanadium dioxide (VO{sub 2}) thin films have been grown on Si{sub 3}N{sub 4}/Si substrates by means of a well-controlled magnetron sputtering process. The deposited VO{sub 2} films were found to exhibit a semiconductor-to-metal transition (SMT) at {approx}69 deg. C with a resistivity change as high as 3.2 decades. A direct and clear-cut correlation is established between the SMT characteristics (both amplitude and abruptness of the transition) of the VO{sub 2} films and their crystallite size.

  20. Inorganic metal oxide/organic polymer nanocomposites and method thereof

    DOE Patents [OSTI]

    Gash, Alexander E.; Satcher, Joe H.; Simpson, Randy

    2004-03-30T23:59:59.000Z

    A synthetic method for preparation of hybrid inorganic/organic energetic nanocomposites is disclosed herein. The method employs the use of stable metal inorganic salts and organic solvents as well as an organic polymer with good solubility in the solvent system to produce novel nanocomposite energetic materials. In addition, fuel metal powders (particularly those that are oxophillic) can be incorporated into composition. This material has been characterized by thermal methods, energy-filtered transmission electron microscopy (EFTEM), N.sub.2 adsoprtion/desorption methods, and Fourier-Transform (FT-IR) spectroscopy. According to these characterization methods the organic polymer phase fills the nanopores of the composite material, providing superb mixing of the component phases in the energetic nanocomposite.

  1. Inorganic Metal Oxide/Organic Polymer Nanocomposites And Method Thereof

    DOE Patents [OSTI]

    Gash, Alexander E. (Livermore, CA); Satcher, Joe H. (Patterson, CA); Simpson, Randy (Livermore, CA)

    2004-11-16T23:59:59.000Z

    A synthetic method for preparation of hybrid inorganic/organic energetic nanocomposites is disclosed herein. The method employs the use of stable metal in organic salts and organic solvents as well as an organic polymer with good solubility in the solvent system to produce novel nanocomposite energetic materials. In addition, fuel metal powders (particularly those that are oxophilic) can be incorporated into composition. This material has been characterized by thermal methods, energy-filtered transmission electron microscopy (EFTEM), N.sub.2 adsoprtion/desorption methods, and Fourier-Transform (FT-IR) spectroscopy. According to these characterization methods the organic polymer phase fills the nanopores of the material, providing superb mixing of the component phases in the energetic nanocomposite.

  2. Synthesis of high {Tc} superconducting coatings and patterns by melt writing and oxidation of metallic precursor alloys

    DOE Patents [OSTI]

    Gao, W.; Vander Sande, J.B.

    1998-07-28T23:59:59.000Z

    A method is provided for fabrication of superconducting oxides and superconducting oxide composites and for joining superconductors to other materials. A coating of a molten alloy containing the metallic elements of the oxide is applied to a substrate surface and oxidized to form the superconducting oxide. A material can be contacted to the molten alloy which is subsequently oxidized joining the material to the resulting superconducting oxide coating. Substrates of varied composition and shape can be coated or joined by this method. 5 figs.

  3. Disordered electronic and magnetic systems - transition metal (Mn) and rare earth (Gd) doped amorphous group IV semiconductors (C, Si, Ge)

    E-Print Network [OSTI]

    Zeng, Li

    2007-01-01T23:59:59.000Z

    various transition or rare-earth metals provide a rich ?eldTransition Metal (Mn) and Rare Earth (Gd) Doped AmorphousTransition Metal (Mn) and Rare Earth (Gd) Doped Amorphous

  4. Electrospun and oxidized cellulose materials for environmental remediation of heavy metals in groundwater

    SciTech Connect (OSTI)

    Han, Dong [Stony Brook University (SUNY); Halada, Gary P. [Stony Brook University (SUNY); Spalding, Brian Patrick [ORNL; Brooks, Scott C [ORNL

    2009-12-01T23:59:59.000Z

    This chapter focuses on the use of modified cellulosic materials in the field of environmental remediation. Two different chemical methods were involved in fabricating oxidized cellulose (OC), which has shown promise as a metal ion chelator in environmental applications. Electrospinning was utilized to introduce a more porous structure into an oxidized cellulose matrix. FTIR and Raman spectroscopy were used to study both the formation of OC and its surface complexation with metal ions. IR and Raman spectroscopic data demonstrate the formation of characteristic carboxylic groups in the structure of the final products and the successful formation of OC-metal complexes. Subsequent field tests at the Field Research Site at Oak Ridge National Laboratory confirmed the value of OC for sorption of both U and Th ions.

  5. Investigation of some new hydro(solvo)thermal synthesis routes to nanostructured mixed-metal oxides

    SciTech Connect (OSTI)

    Burnett, David L.; Harunsani, Mohammad H. [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom); Kashtiban, Reza J. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Playford, Helen Y. [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom); Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); ISIS Facility, Rutherford Appleton Laboratory, Didcot OX11 0QX (United Kingdom); Sloan, Jeremy [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Hannon, Alex C. [ISIS Facility, Rutherford Appleton Laboratory, Didcot OX11 0QX (United Kingdom); Walton, Richard I., E-mail: r.iwalton@warwick.ac.uk [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2014-06-01T23:59:59.000Z

    We present a study of two new solvothermal synthesis approaches to mixed-metal oxide materials and structural characterisation of the products formed. The solvothermal oxidation of metallic gallium by a diethanolamine solution of iron(II) chloride at 240 °C produces a crystalline sample of a spinel-structured material, made up of nano-scale particles typically 20 nm in dimension. XANES spectroscopy at the K-edge shows that the material contains predominantly Fe{sup 2+} in an octahedral environment, but that a small amount of Fe{sup 3+} is also present. Careful analysis using transmission electron microscopy and powder neutron diffraction shows that the sample is actually a mixture of two spinel materials: predominantly (>97%) an Fe{sup 2+} phase Ga{sub 1.8}Fe{sub 1.2}O{sub 3.9}, but with a minor impurity phase that is iron-rich. In contrast, the hydrothermal reaction of titanium bis(ammonium lactato)dihydroxide in water with increasing amounts of Sn(IV) acetate allows nanocrystalline samples of the SnO{sub 2}–TiO{sub 2} solid solution to be prepared directly, as proved by powder XRD and Raman spectroscopy. - Graphical abstract: New solvothermal synthesis approaches to spinel and rutile mixed-metal oxides are reported. - Highlights: • Solvothermal oxidation of gallium metal in organic iron(II) solution gives a novel iron gallate spinel. • Hydrothermal reaction of titanium(IV) complex and tin(IV) acetate produces the complete SnO{sub 2}–TiO{sub 2} solid solution. • Nanostructured mixed-metal oxide phases are produced directly from solution.

  6. Metal Current Collector Protected by Oxide Film - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighand Retrievals from aRod EggertMercuryAdvanced Materials AdvancedMetal

  7. Catalytic hydrocarbon reactions over supported metal oxides. Progress report, April 1, 1994--January 31, 1995

    SciTech Connect (OSTI)

    Ekerdt, J.G.

    1995-01-31T23:59:59.000Z

    Oxide catalysis plays a central role in hydrocarbon processing and improvements in catalytic activity or selectivity are of great technological importance because these improvements will translate directly into more efficient utilization of hydrocarbon supplies and lower energy consumption in separation processes. An understanding of the relationships between surface structure and catalytic properties is needed to describe and improve oxide catalysts. Our approach has been to prepare supported oxides that have a specific structure and oxidation state and then employ these structures in reaction studies. Our current research program is focused on studying the fundamental relationships between structure and reactivity for two important reactions that are present in many oxide-catalyzed processes, partial oxidation and carbon-carbon bond formation. Oxide catalysis can be a complex process with both metal cation and oxygen anions participating in the chemical reactions. From an energy perspective carbon-carbon bond formation is particularly relevant to CO hydrogenation in isosynthesis. Hydrogenolysis and hydrogenation form the basis for heteroatom removal in fuels processing. Understanding the catalysis of these processes (and others) requires isolating reaction steps in the overall cycle and determining how structure and composition influence the individual reaction steps. Specially designed oxides, such as we use, permit one to study some of the steps in oxidation, carbon-carbon coupling and heteroatom removal catalysis. During the course of our studies we have: (1) developed methods to form and stabilize various Mo and W oxide structures on silica; (2) studied C-H abstraction reactions over the fully oxidized cations; (3) studied C-C bond coupling by methathesis and reductive coupling of aldehydes and ketones over reduced cation structures; and (4) initiated a study of hydrogenation and hydrogenolysis over reduced cation structures.

  8. Pressure-driven semiconductor-metal transition in intermediate-valence TmSe sub 1 minus x Te sub x and the concept of an excitonic insulator

    SciTech Connect (OSTI)

    Neuenschwander, J.; Wachter, P. (Laboratorium fuer Festkoerperphysik, Eidgenoessische Technische Hochschule Zuerich, CH-8093 Zuerich (Switzerland))

    1990-06-15T23:59:59.000Z

    This work studies the pressure-induced semiconductor-to-metal transition (SMT) in the TmSe-TmTe alloy system. This SMT is accompanied by a valence instability of the Tm ions. Single-crystalline semiconducting TmSe{sub 1{minus}{ital x}}Te{sub {ital x}} alloys are investigated under high pressure at low temperatures. Measurements of electrical resistivity, magnetic susceptibility, neutron diffraction, and optical properties are presented and discussed. A very unusual peak structure in the resistivity-pressure relation is observed at low temperatures. A discussion of the novel feature involves the concept of an excitonic insulator and {ital f}-{ital d} hybridization. The magnetic behavior of the compounds is significantly influenced by the SMT. This is thought to be mainly due to the additional coupling between the magnetic moments of Tm via free carriers which are present in the metallic state.

  9. Interaction of Pu(IV,VI) hydroxides/oxides with metal hydroxides/oxides in alkaline media

    SciTech Connect (OSTI)

    Fedoseev, A.M.; Krot, N.N.; Budantseva, N.A.; Bessonov, A.A.; Nikonov, M.V.; Grigoriev, M.S.; Garnov, A.Y.; Perminov, V.P.; Astafurova, L.N. [Russian Academy of Sciences, Moscow (Russian Federation). Inst. of Physical Chemistry

    1998-08-01T23:59:59.000Z

    The primary goal of this investigation was to obtain data on the possibility, extent, and characteristics of interaction of Pu(IV) and (VI) with hydroxides and oxides of d-elements and other metals [Al(III), LA(III), and U(VI)] in alkaline media. Such information is important in fundamental understanding of plutonium disposition and behavior in Hanford Site radioactive tank waste sludge. These results supply essential data for determining criticality safety and in understanding transuranic waste behavior in storage, retrieval, and treatment of Hanford Site tank waste.

  10. Electrical conductivity in oxygen-deficient phases of transition metal oxides from first-principles calculations.

    SciTech Connect (OSTI)

    Bondi, Robert James; Desjarlais, Michael Paul; Thompson, Aidan Patrick; Brennecka, Geoffrey L.; Marinella, Matthew

    2013-09-01T23:59:59.000Z

    Density-functional theory calculations, ab-initio molecular dynamics, and the Kubo-Greenwood formula are applied to predict electrical conductivity in Ta2Ox (0x5) as a function of composition, phase, and temperature, where additional focus is given to various oxidation states of the O monovacancy (VOn; n=0,1+,2+). Our calculations of DC conductivity at 300K agree well with experimental measurements taken on Ta2Ox thin films and bulk Ta2O5 powder-sintered pellets, although simulation accuracy can be improved for the most insulating, stoichiometric compositions. Our conductivity calculations and further interrogation of the O-deficient Ta2O5 electronic structure provide further theoretical basis to substantiate VO0 as a donor dopant in Ta2O5 and other metal oxides. Furthermore, this dopant-like behavior appears specific to neutral VO cases in both Ta2O5 and TiO2 and was not observed in other oxidation states. This suggests that reduction and oxidation reactions may effectively act as donor activation and deactivation mechanisms, respectively, for VO0 in transition metal oxides.

  11. Secondary cell with orthorhombic alkali metal/manganese oxide phase active cathode material

    DOE Patents [OSTI]

    Doeff, M.M.; Peng, M.Y.; Ma, Y.; Visco, S.J.; DeJonghe, L.C.

    1996-09-24T23:59:59.000Z

    An alkali metal manganese oxide secondary cell is disclosed which can provide a high rate of discharge, good cycling capabilities, good stability of the cathode material, high specific energy (energy per unit of weight) and high energy density (energy per unit volume). The active material in the anode is an alkali metal and the active material in the cathode comprises an orthorhombic alkali metal manganese oxide which undergoes intercalation and deintercalation without a change in phase, resulting in a substantially linear change in voltage with change in the state of charge of the cell. The active material in the cathode is an orthorhombic structure having the formula M{sub x}Z{sub y}Mn{sub (1{minus}y)}O{sub 2}, where M is an alkali metal; Z is a metal capable of substituting for manganese in the orthorhombic structure such as iron, cobalt or titanium; x ranges from about 0.2 in the fully charged state to about 0.75 in the fully discharged state, and y ranges from 0 to 60 atomic %. Preferably, the cell is constructed with a solid electrolyte, but a liquid or gelatinous electrolyte may also be used in the cell. 11 figs.

  12. Secondary cell with orthorhombic alkali metal/manganese oxide phase active cathode material

    DOE Patents [OSTI]

    Doeff, Marca M. (Hayward, CA); Peng, Marcus Y. (Cupertino, CA); Ma, Yanping (Albany, CA); Visco, Steven J. (Berkeley, CA); DeJonghe, Lutgard C. (Lafayette, CA)

    1996-01-01T23:59:59.000Z

    An alkali metal manganese oxide secondary cell is disclosed which can provide a high rate of discharge, good cycling capabilities, good stability of the cathode material, high specific energy (energy per unit of weight) and high energy density (energy per unit volume). The active material in the anode is an alkali metal and the active material in the cathode comprises an orthorhombic alkali metal manganese oxide which undergoes intercalation and deintercalation without a change in phase, resulting in a substantially linear change in voltage with change in the state of charge of the cell. The active material in the cathode is an orthorhombic structure having the formula M.sub.x Z.sub.y Mn.sub.(1-y) O.sub.2, where M is an alkali metal; Z is a metal capable of substituting for manganese in the orthorhombic structure such as iron, cobalt or titanium; x ranges from about 0.2 in the fully charged state to about 0.75 in the fully discharged state, and y ranges from 0 to 60 atomic %. Preferably, the cell is constructed with a solid electrolyte, but a liquid or gelatinous electrolyte may also be used in the cell.

  13. Metal oxide coating of carbon supports for supercapacitor applications.

    SciTech Connect (OSTI)

    Boyle, Timothy J.; Tribby, Louis, J (University of New Mexico, Albuquerque, NM); Lakeman, Charles D. E. (TPL, Inc., Albuquerque, NM); Han, Sang M. (University of New Mexico, Albuquerque, NM); Lambert, Timothy N.; Fleig, Patrick F. (TPL, Inc., Albuquerque, NM)

    2008-07-01T23:59:59.000Z

    The global market for wireless sensor networks in 2010 will be valued close to $10 B, or 200 M units. TPL, Inc. is a small Albuquerque based business that has positioned itself to be a leader in providing uninterruptible power supplies in this growing market with projected revenues expected to exceed $26 M in 5 years. This project focused on improving TPL, Inc.'s patent-pending EnerPak{trademark} device which converts small amounts of energy from the environment (e.g., vibrations, light or temperature differences) into electrical energy that can be used to charge small energy storage devices. A critical component of the EnerPak{trademark} is the supercapacitor that handles high power delivery for wireless communications; however, optimization and miniaturization of this critical component is required. This proposal aimed to produce prototype microsupercapacitors through the integration of novel materials and fabrication processes developed at New Mexico Technology Research Collaborative (NMTRC) member institutions. In particular, we focused on developing novel ruthenium oxide nanomaterials and placed them into carbon supports to significantly increase the energy density of the supercapacitor. These improvements were expected to reduce maintenance costs and expand the utility of the TPL, Inc.'s device, enabling New Mexico to become the leader in the growing global wireless power supply market. By dominating this niche, new customers were expected to be attracted to TPL, Inc. yielding new technical opportunities and increased job opportunities for New Mexico.

  14. Chemistry of Sulfur Oxides on Transition Metals. II. Thermodynamics of Sulfur Oxides on Platinum(111)

    E-Print Network [OSTI]

    Lin, Xi

    J/mol from temperature-programmed desorption (TPD) experiments.4 Having some energetic data or, moreover, having substantial data on the thermodynamics of adsorption and interconversion of sulfur oxide species obtained several new vibrational features by pretreating the Pt(111) surface with the gas-phase oxygen

  15. Final Report: Catalytic Hydrocarbon Reactions over Supported Metal Oxides, August 1, 1995 - July 31, 1999

    SciTech Connect (OSTI)

    Ekerdt, John G.

    1999-07-31T23:59:59.000Z

    The research program focused on the catalysis of hydrodesulfurization (HDS) over molybdenum-based catalysts and how catalyst composition, redox ability, structure and neighboring sites control the catalytic properties of metal oxides. We sought to understand the catalytic features/sites that control hydrogenation, hydrogenolysis, and isomerization during HDS. Unprompted silica-supported molybdenum oxides and molybdenum sulfides were studied. Model catalyst systems were prepared from organometallic precursors or cluster compounds to generate supported structures that feature Mo(II) and Mo(IV) cations that are isolated or in ensembles and that have either Mo-O or Mo-S bonds. Conventional MOS{sub 2} catalysts, which contain both edge and rim sites, were be studied. Finally, single-layer MOS{sub 2} structures were also prepared from 2H-MoS{sub 2} powder so that the model systems could be compared against a disulfide catalyst that only involves rim sites. Catalytic reactions for thiophene and tetrahydrothione were studied over the various catalysts. Oxidation states were determined using X-ray photoelectron spectroscopy. X-ray crystallography was used to characterize and follow changes in the MOS{sub 2} structures. The program on metal oxides prepared supported oxides that have a specific structure and oxidation state to serve as model templates for the more complex commercial catalysts and then employed these structures in reaction studies. This focus area examined the relationships between structure and cation redox characteristics in oxidation catalysis. Infrared and Raman spectroscopy were used to characterize the cations and reaction intermediates.

  16. Tubular solid oxide fuel cells with porous metal supports and ceramic interconnections

    DOE Patents [OSTI]

    Huang, Kevin (Export, PA); Ruka, Roswell J. (Pittsburgh, PA)

    2012-05-08T23:59:59.000Z

    An intermediate temperature solid oxide fuel cell structure capable of operating at from 600.degree. C. to 800.degree. C. having a very thin porous hollow elongated metallic support tube having a thickness from 0.10 mm to 1.0 mm, preferably 0.10 mm to 0.35 mm, a porosity of from 25 vol. % to 50 vol. % and a tensile strength from 700 GPa to 900 GPa, which metallic tube supports a reduced thickness air electrode having a thickness from 0.010 mm to 0.2 mm, a solid oxide electrolyte, a cermet fuel electrode, a ceramic interconnection and an electrically conductive cell to cell contact layer.

  17. Composite materials with metal oxide attached to lead chalcogenide nanocrystal quantum dots with linkers

    DOE Patents [OSTI]

    Fuke, Nobuhiro; Koposov, Alexey Y; Sykora, Milan; Hoch, Laura

    2014-12-16T23:59:59.000Z

    Composite materials useful for devices such as photoelectrochemical solar cells include a substrate, a metal oxide film on the substrate, nanocrystalline quantum dots (NQDs) of lead sulfide, lead selenide, and lead telluride, and linkers that attach the NQDs to the metal oxide film. Suitable linkers preserve the 1s absorption peak of the NQDs. A suitable linker has a general structure A-B-C where A is a chemical group adapted for binding to a MO.sub.x and C is a chemical group adapted for binding to a NQD and B is a divalent, rigid, or semi-rigid organic spacer moiety. Other linkers that preserve the 1s absorption peak may also be used.

  18. Synthesis of Low-Melting Metal Oxide and Sulfide Nanowires and Nanobelts

    E-Print Network [OSTI]

    Daraio, Chiara

    such as oxygen/hydrogen mixture for oxides and H2S for sulfides. In the case of b-Ga2O3 and SnO2, a change with the sulfide nanowires suggest that H2S reacts directly at the molten metal surface to form gallium sulfide to either oxygen or H2S at an elevated temperature. EXPERIMENTAL The synthesis of the nanowires

  19. Process for producing chalcogenide semiconductors

    DOE Patents [OSTI]

    Noufi, R.; Chen, Y.W.

    1985-04-30T23:59:59.000Z

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  20. Process for producing chalcogenide semiconductors

    DOE Patents [OSTI]

    Noufi, Rommel (Westminster, CO); Chen, Yih-Wen (Omaha, NE)

    1987-01-01T23:59:59.000Z

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  1. Oxidation Resistant, Cr Retaining, Electrically Conductive Coatings on Metallic Alloys for SOFC Interconnects

    SciTech Connect (OSTI)

    Vladimir Gorokhovsky

    2008-03-31T23:59:59.000Z

    This report describes significant results from an on-going, collaborative effort to enable the use of inexpensive metallic alloys as interconnects in planar solid oxide fuel cells (SOFCs) through the use of advanced coating technologies. Arcomac Surface Engineering, LLC, under the leadership of Dr. Vladimir Gorokhovsky, is investigating filtered-arc and filtered-arc plasma-assisted hybrid coating deposition technologies to promote oxidation resistance, eliminate Cr volatility, and stabilize the electrical conductivity of both standard and specialty steel alloys of interest for SOFC metallic interconnect (IC) applications. Arcomac has successfully developed technologies and processes to deposit coatings with excellent adhesion, which have demonstrated a substantial increase in high temperature oxidation resistance, stabilization of low Area Specific Resistance values and significantly decrease Cr volatility. An extensive matrix of deposition processes, coating compositions and architectures was evaluated. Technical performance of coated and uncoated sample coupons during exposures to SOFC interconnect-relevant conditions is discussed, and promising future directions are considered. Cost analyses have been prepared based on assessment of plasma processing parameters, which demonstrate the feasibility of the proposed surface engineering process for SOFC metallic IC applications.

  2. Semiconductor films on flexible iridium substrates

    DOE Patents [OSTI]

    Goyal, Amit

    2005-03-29T23:59:59.000Z

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  3. Thin films of metal oxide nanoparticles deposited on substrates find applications in various technologies such as sensors, heterogeneous

    E-Print Network [OSTI]

    oven, which restrict the choice of substrates (metal, glass) and can negatively affects their performances (stress induction, oxidation, substrate warping). VALUE PROPOSITION This novel process offers key+ hours in traditional ovens (including ramp up & down) Delivers equal or superior optoelectronic

  4. An Atomic Perspective of a Doped Metal-Oxide Interface, E. A. A. Jarvis and E. A. Carter*

    E-Print Network [OSTI]

    Carter, Emily A.

    An Atomic Perspective of a Doped Metal-Oxide Interface, E. A. A. Jarvis and E. A. Carter interactions. The past two decades marked an explosion of experimental and theoretical advances in treating gas

  5. Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu 2O) thin-films

    E-Print Network [OSTI]

    Siah, Sin Cheng

    Forming low-resistivity contacts on cuprous oxide (Cu[subscript 2]O) is an essential step toward demonstrating its suitability as a candidate solar cell material. We measure the contact resistivity of three noble metals ...

  6. Modelling of thermo-mechanical and irradiation behavior of metallic and oxide fuels for sodium fast reactors

    E-Print Network [OSTI]

    Karahan, Aydin

    2009-01-01T23:59:59.000Z

    A robust and reliable code to model the irradiation behavior of metal and oxide fuels in sodium cooled fast reactors is developed. Modeling capability was enhanced by adopting a non-empirical mechanistic approach to the ...

  7. Effect of electron collecting metal oxide layer in normal and inverted structure polymer solar cells

    SciTech Connect (OSTI)

    Ng, A.; Liu, X.; Sun, Y. C.; Djuriši?, A. B. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. (China); Ng, A. M. C. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China and Nanostructure Institute for Energy and Environmental Research, Division of Physical Sciences, South University of Science and Technology of China, Shenzhen (China); Chan, W. K. [Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. (China)

    2013-12-04T23:59:59.000Z

    We performed a systematic study of the effect of electron collecting metal oxide layer on the performance of P3HT: PCBM solar cells. Zinc oxide (ZnO) or titanium dioxide (TiO{sub 2}) buffer layers were prepared by either e-beam evaporation or solution processing method. We also compared the photovoltaic performance of inserting the buffer layer between indium tin oxide (ITO) and the polymer layer for the inverted structure (ITO/ ZnO or TiO{sub 2}/P3HT:PCBM/V{sub 2}O{sub 5}/Au) as well as inserting the buffers layers between the polymer and the aluminum electrode for the conventional structure (ITO/V{sub 2}O{sub 5}/P3HT:PCBM/ZnO or TiO{sub 2}/Al). The results are shown in detail.

  8. Protective coating on positive lithium-metal-oxide electrodes for lithium batteries

    DOE Patents [OSTI]

    Johnson, Christopher S.; Thackeray, Michael M.; Kahaian, Arthur J.

    2006-05-23T23:59:59.000Z

    A positive electrode for a non-aqueous lithium cell comprising a LiMn2-xMxO4 spinel structure in which M is one or more metal cations with an atomic number less than 52, such that the average oxidation state of the manganese ions is equal to or greater than 3.5, and in which 0.ltoreq.x.ltoreq.0.15, having one or more lithium spine oxide LiM'2O4 or lithiated spinel oxide Li1+yM'2O4 compounds on the surface thereof in which M' are cobalt cations and in which 0.ltoreq.y.ltoreq.1.

  9. Surface effects and phase stability in metal oxides nanoparticles under visible irradiation

    SciTech Connect (OSTI)

    Ricci, Pier Carlo, E-mail: carlo.ricci@dsf.unica.it; Carbonaro, C. M., E-mail: carlo.ricci@dsf.unica.it; Corpino, R., E-mail: carlo.ricci@dsf.unica.it; Chiriu, D., E-mail: carlo.ricci@dsf.unica.it; Stagi, L., E-mail: carlo.ricci@dsf.unica.it [Dipartimento di Fisica, Universitá degli Studi di Cagliari, S.P. Monserrato-Sestu Km 0,700, 09042 Monserrato (Canada) (Italy)

    2014-10-21T23:59:59.000Z

    The light induced phase transformation between stable phases of metal oxides nanoparticles is analyzed. The surrounding atmosphere as well as the defect density at the surface play a fundamental role. It has been found that in oxygen poor chamber atmosphere the phase transformation is favored, while the phase transition cannot be achieved if the defects at the surface are properly passivated. The phase transition is activated by intragap irradiation, able to activate the F- center at the surface connected to oxygen vacancies, and promoting the activation of the surface and the nucleation of neighboring crystallites. The phase transition was studied in Titanium oxide (TiO{sub 2}) and in Iron oxide (Fe{sub 2}O{sub 3}): Maghemite is subjected to a phase transformation to ??Fe{sub 2}O{sub 3} (hematite), Anatase nanoparticles converts to Rutile. The general mechanism of the phase transition and, more in general, the possibility to optically control the surface activity of metal oxides is discussed.

  10. Evaluation of the thermodynamic properties of hydrated metal oxide nanoparticles by INS techniques

    SciTech Connect (OSTI)

    Spencer, Elinor [Virginia Polytechnic Institute and State University] [Virginia Polytechnic Institute and State University; Ross, Dr. Nancy [Virginia Polytechnic Institute and State University] [Virginia Polytechnic Institute and State University; Parker, Stewart F. [ISIS Facility, Rutherford Appleton Laboratory (ISIS)] [ISIS Facility, Rutherford Appleton Laboratory (ISIS); Kolesnikov, Alexander I [ORNL] [ORNL

    2013-01-01T23:59:59.000Z

    In this contribution we will present a detailed methodology for the elucidation of the following aspects of the thermodynamic properties of hydrated metal oxide nanoparticles from high-resolution, low-temperature inelastic neutron scattering (INS) data: (i) the isochoric heat capacity and entropy of the hydration layers both chemi- and physisorbed to the particle surface; (ii) the magnetic contribution to the heat capacity of the nanoparticles. This will include the calculation of the vibrational density of states (VDOS) from the raw INS spectra, and the subsequent extraction of the thermodynamic data from the VDOS. This technique will be described in terms of a worked example namely, cobalt oxide (Co3O4 and CoO). To complement this evaluation of the physical properties of metal oxide nanoparticle systems, we will emphasise the importance of high-resolution, high-energy INS for the determination of the structure and dynamics of the water species, namely molecular (H2O) and dissociated water (OH, hydroxyl), confined to the oxide surfaces. For this component of the chapter we will focus on INS investigations of hydrated isostructural rutile (a-TiO2) and cassiterite (SnO2) nanoparticles. We will complete this discussion of nanoparticle analysis by including an appraisal of the INS instrumentation employed in such studies with particular focus on TOSCA [ISIS, Rutherford Appleton Laboratory (RAL), U.K.] and the newly developed spectrometer SEQUOIA [SNS, Oak Ridge National Laboratory (ORNL), U.S.A].

  11. DOI: 10.1002/adma.200601787 Microsolidics: Fabrication of Three-Dimensional Metallic

    E-Print Network [OSTI]

    Prentiss, Mara

    in flexible sensors and displays has fueled the development of polymer­metal composites. Re- search in this field includes composites of metal in PDMS with optical functions,[21] conductive PDMS­carbon nanotube oxide semiconductor field-effect transistors,[26] and flexible gold­polymer nano- composites as passive

  12. Low trap states in in situ SiN{sub x}/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Lu, Xing; Ma, Jun; Jiang, Huaxing; Liu, Chao; Lau, Kei May, E-mail: eekmlau@ust.hk [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-09-08T23:59:59.000Z

    We report the use of SiN{sub x} grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiN{sub x}/AlN interface exhibits remarkably low trap state densities in the range of 10{sup 11}–10{sup 12?}cm{sup ?2}eV{sup ?1}. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiN{sub x} layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiN{sub x} as an effective gate dielectric for AlN/GaN MIS devices.

  13. Respiration of metal (hydr)oxides by Shewanella and Geobacter: a key role for multihaem c-type cytochromes

    SciTech Connect (OSTI)

    Shi, Liang; Squier, Thomas C.; Zachara, John M.; Fredrickson, Jim K.

    2007-07-01T23:59:59.000Z

    Dissimilatory reduction of metal (e.g. Fe, Mn) (hydr)oxides represents a challenge for microorganisms, as their cell envelopes are impermeable to metal (hydr)oxides that are poorly soluble in water. To overcome this physical barrier, the Gram-negative bacteria Shewanella oneidensis MR-1 and Geobactersulfurreducens have developed electron transfer (ET) strategies that require multihaem c-type cytochromes (c-Cyts). In S. oneidensis MR-1, multihaem c-Cyts CymA and MtrA are believed to transfer electrons from the inner membrane quinone/quinol pool through the periplasm to the outer membrane. The type II secretion system of S. oneidensis MR-1 has been implicated in the reduction of metal (hydr)oxides, most likely by translocating decahaem c-Cyts MtrC and OmcA across outer membrane to the surface of bacterial cells where they form a protein complex. The extracellular MtrC and OmcA can directly reduce solid metal (hydr)oxides. Likewise, outer membrane multihaem c-Cyts OmcE and OmcS of G. sulfurreducens are suggested to transfer electrons from outer membrane to type IV pili that are hypothesized to relay the electrons to solid metal (hydr)oxides. Thus, multihaem c-Cyts play critical roles in S. oneidensis MR-1-and G. sulfurreducens-mediated dissimilatory reduction of solid metal (hydr)oxides by facilitating ET across the bacterial cell envelope.

  14. Synthesis and structural, magnetic, thermal, and transport properties of several transition metal oxides and aresnides

    SciTech Connect (OSTI)

    Das, Supriyo

    2010-05-16T23:59:59.000Z

    Oxide compounds containing the transition metal vanadium (V) have attracted a lot of attention in the field of condensed matter physics owing to their exhibition of interesting properties including metal-insulator transitons, structural transitions, ferromagnetic and antiferromagnetic orderings, and heavy fermion behavior. Binary vanadium oxides V{sub n}O{sub 2n-1} where 2 {le} n {le} 9 have triclinic structures and exhibit metal-insulator and antiferromagnetic transitions. The only exception is V{sub 7}O{sub 13} which remains metallic down to 4 K. The ternary vanadium oxide LiV{sub 2}O{sub 4} has the normal spinel structure, is metallic, does not undergo magnetic ordering and exhibits heavy fermion behavior below 10 K. CaV{sub 2}O{sub 4} has an orthorhombic structure with the vanadium spins forming zigzag chains and has been suggested to be a model system to study the gapless chiral phase. These provide great motivation for further investigation of some known vanadium compounds as well as to explore new vanadium compounds in search of new physics. This thesis consists, in part, of experimental studies involving sample preparation and magnetic, transport, thermal, and x-ray measurements on some strongly correlated eletron systems containing the transition metal vanadium. The compounds studied are LiV{sub 2}O{sub 4}, YV{sub 4}O{sub 8}, and YbV{sub 4}O{sub 8}. The recent discovery of superconductivity in RFeAsO{sub 1-x}F{sub x} (R = La, Ce, Pr, Gd, Tb, Dy, Sm, and Nd), and AFe{sub 2}As{sub 2} (A = Ba, Sr, Ca, and Eu) doped with K, Na, or Cs at the A site with relatively high T{sub c} has sparked tremendous activities in the condensed matter physics community and a renewed interest in the area of superconductivity as occurred following the discovery of the layered cuprate high T{sub c} superconductors in 1986. To discover more superconductors with hopefully higher T{sub c}'s, it is extremely important to investigate compounds having crystal structures related to the compounds showing high T{sub c} superconductivity. Along with the vanadium oxide compounds described before, this thesis describes our investigations of magnetic, structural, thermal and transport properties of EuPd{sub 2}Sb{sub 2} single crystals which have a crystal structure closely related to the AFe{sub 2}As{sub 2} compounds and also a study of the reaction kinetics of the formation of LaFeAsO{sub 1-x}F{sub x}.

  15. CO Oxidation on Pt-Group Metals from Ultrahigh Vacuum to Near Atmospheric Pressures. 2. Palladium and Platinum

    E-Print Network [OSTI]

    Goodman, Wayne

    CO Oxidation on Pt-Group Metals from Ultrahigh Vacuum to Near Atmospheric Pressures. 2. PalladiumVed: NoVember 3, 2008 CO oxidation on Pd(100), -(111), -(110), and Pt(110) single crystals was studied compositions. At low pressures the reaction fell into two regimes, one with a CO-dominant surface where the CO2

  16. Anomalous optical switching and thermal hysteresis during semiconductor-metal phase transition of VO{sub 2} films on Si substrate

    SciTech Connect (OSTI)

    Leahu, G.; Li Voti, R., E-mail: roberto.livoti@uniroma1.it; Sibilia, C.; Bertolotti, M. [Dipartimento di Scienze di Base ed Applicate per l'Ingegneria, Sapienza Università di Roma, via A. Scarpa 16, 00161 Roma (Italy)] [Dipartimento di Scienze di Base ed Applicate per l'Ingegneria, Sapienza Università di Roma, via A. Scarpa 16, 00161 Roma (Italy)

    2013-12-02T23:59:59.000Z

    We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO{sub 2}) film deposited on silicon wafer. The VO{sub 2} phase transition is studied in the mid-infrared region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The reflectance has been measured in two configurations: from the side of the VO{sub 2} film and from that of Si wafer. The results show a strong asymmetry between the emissivity in the two configurations, and the fact that the emissivity dynamic range from the silicon side is twice as large than that from the VO{sub 2} side. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO{sub 2}, which has been explained by applying the Maxwell Garnett effective medium approximation theory.

  17. CO oxidation trends on Pt-group metals from ultrahigh vacuum to near atmospheric pressures: A combined in situ PM-IRAS and reaction kinetics study

    E-Print Network [OSTI]

    Goodman, Wayne

    CO oxidation trends on Pt-group metals from ultrahigh vacuum to near atmospheric pressures Accepted for publication 14 October 2008 Available online 5 November 2008 Keywords: Pt-group metals CO a c t The CO oxidation reaction on Pt-group metals (Pt, Rh, and Pd) has been investigated at low (610À

  18. Variation of the shape and morphological properties of silica and metal oxide powders by electro homogeneous precipitation

    DOE Patents [OSTI]

    Harris, Michael T. (Knoxville, TN); Basaran, Osman A. (Oak Ridge, TN); Sisson, Warren G. (Oak Ridge, TN); Brunson, Ronald R. (Lenoir City, TN)

    1997-01-01T23:59:59.000Z

    The present invention provides a method for preparing irreversible linear aggregates (fibrils) of metal oxide powders by utilizing static or pulsed DC electrical fields across a relatively non-conducting liquid solvent in which organometal compounds or silicon alkoxides have been dissolved. The electric field is applied to the relatively non-conducting solution throughout the particle formation and growth process promoting the formation of either linear aggregates (fibrils) or spherical shaped particles as desired. Thus the present invention provides a physical method for altering the size, shape and porosity of precursor hydrous metal oxide or hydrous silicon oxide powders for the development of advanced ceramics with improved strength and insulating capacity.

  19. Isotopically controlled semiconductors

    E-Print Network [OSTI]

    Haller, Eugene E.

    2006-01-01T23:59:59.000Z

    16 Isotopically Controlled Semiconductors Eugene E. Hallerof isotopically engineered semiconductors; for outstandingisotopically controlled semiconductor crystals. This article

  20. Correlation effects in (111) bilayers of perovskite transition-metal oxides

    SciTech Connect (OSTI)

    Okamoto, Satoshi [ORNL] [ORNL; Zhu, Wenguang [University of Science and Technology of China] [University of Science and Technology of China; Nomura, Yusuke [University of Tokyo, Japan] [University of Tokyo, Japan; Arita, R. [University of Tokyo, Japan] [University of Tokyo, Japan; Xiao, Di [Carnegie Mellon University (CMU)] [Carnegie Mellon University (CMU); Nagaosa, Naoto [University of Tokyo, Japan] [University of Tokyo, Japan

    2014-01-01T23:59:59.000Z

    We investigate the correlation-induced Mott, magnetic, and topological phase transitions in artificial (111) bilayers of perovskite transition-metal oxides LaAuO3 and SrIrO3 for which the previous density-functional theory calculations predicted topological insulating states. Using the dynamical-mean-field theory with realistic band structures and Coulomb interactions, LaAuO3 bilayer is shown to be far away from a Mott insulating regime, and a topological-insulating state is robust. On the other hand, SrIrO3 bilayer is on the verge of an orbital-selective topological Mott transition and turns to a trivial insulator by an antiferromagnetic ordering. Oxide bilayers thus provide a novel class of topological materials for which the interplay between the spin-orbit coupling and electron-electron interactions is a fundamental ingredient.

  1. Rapid thermal cycling of metal-supported solid oxide fuel cellmembranes

    SciTech Connect (OSTI)

    Matus, Yuriy B.; De Jonghe, Lutgard C.; Jacobson, Craig P.; Visco, Steven J.

    2004-01-02T23:59:59.000Z

    Solid oxide fuel cell (SOFC) membranes were developed in which zirconia-based electrolyte thin films were supported by a composite metal/ceramic electrode, and were subjected to rapid thermal cycling between 200 and 800 C. The effects of this cycling on membrane performance were evaluated. The membranes, not yet optimized for performance, showed a peak power density of 350mW/cm2at 900 C in laboratory-sized SOFCs that was not affected by the thermal cycling. This resistance to cycling degradation is attributed to the close matching of thermal expansion coefficient of the cermet support electrode with that of the zirconia electrolyte.

  2. High-temperature stable W/GaAs interface and application to metal--semiconductor field-effect transistors and digital circuits

    SciTech Connect (OSTI)

    Josefowicz, J.Y.; Rensch, D.B.

    1987-11-01T23:59:59.000Z

    The thermal stability of the physical, chemical, and electrical properties of W thin films sputter deposited on GaAs were investigated. A variety of characterization methods, including thin film stress analysis, Auger analysis, Rutherford backscattering spectrometry (RBS) analysis, and Schottky barrier measurements showed that the W/GaAs interface remains stable after high-temperature furnace annealing at 900 /sup 0/C for 15 min or rapid-lamp annealing at 1000 /sup 0/C for 11 s. Some refractory metal compounds were also investigated, including, WSi, WN/sub x/, and TaSi/sub x/. Pure W films produced the best Schottky diode characteristics. The average Schottky barrier height was 0.70 +- 0.009 V across a 2-in wafer after furnace annealing at 800 /sup 0/C/15 min. Pure W self-aligned gate (SAG) metal-semiconductor field-effect transistors (MESFET) and digital circuits were also fabricated. Transconductances as high as 300 mS/mm (L/sub g/ = 1.0 ..mu..m) were measured for enhancement mode SAG MESFET's. Circuits were fabricated with SAG MESFET enhancement-resistor mode logic using pure W gates, including ring oscillators, with gate delay as low as 25 ps and divide-by-eight circuits that functioned at a frequency >1 GHz.

  3. Characterization of a Fe/Y[subscript 2]O[subscript 3] metal/oxide interface using neutron and x-ray scattering

    E-Print Network [OSTI]

    Watkins, E. B.

    The structure of metal/oxide interfaces is important to the radiation resistance of oxide dispersion-strengthened steels. We find evidence of gradual variations in stoichiometry and magnetization across a Fe/Y[subscript ...

  4. Speciation and Fate of Trace Metals in Estuarine Sediments Under Reduced and Oxidized Conditions, Seaplane Lagoon, Alameda Naval Air Station

    SciTech Connect (OSTI)

    Carroll, S A; Day, P A; Esser, B; Randall, S

    2002-10-18T23:59:59.000Z

    We have identified important chemical reactions that control the fate of metal-contaminated estuarine sediments if they are left undisturbed (in situ) or if they are dredged. We combined information on the molecular bonding of metals in solids from X-ray absorption spectroscopy (XAS) with thermodynamic and kinetic driving forces obtained from dissolved metal concentrations to deduce the dominant reactions under reduced and oxidized conditions. We evaluated the in situ geochemistry of metals (cadmium, chromium, iron, lead, manganese and zinc) as a function of sediment depth (to 100 cm) from a 60-year record of contamination at the Alameda Naval Air Station, California. Results from XAS and thermodynamic modeling of porewaters show that cadmium and most of the zinc form stable sulfide phases, and that lead and chromium are associated with stable carbonate, phosphate, phyllosilicate, or oxide minerals. Therefore, there is minimal risk associated with the release of these trace metals from the deeper sediments contaminated prior to the Clean Water Act (1975) as long as reducing conditions are maintained. Increased concentrations of dissolved metals with depth were indicative of the formation of metal HS- complexes. The sediments also contain zinc, chromium, and manganese associated with detrital iron-rich phyllosilicates and/or oxides. These phases are recalcitrant at near-neutral pH and do not undergo reductive dissolution within the 60-year depositional history of sediments at this site. The fate of these metals during dredging was evaluated by comparing in situ geochemistry with that of sediments oxidized by seawater in laboratory experiments. Cadmium and zinc pose the greatest hazard from dredging because their sulfides were highly reactive in seawater. However, their dissolved concentrations under oxic conditions were limited eventually by sorption to or co-precipitation with an iron (oxy)hydroxide. About 50% of the reacted CdS and 80% of the reacted ZnS were bonded to an oxide-substrate at the end of the 90-day oxidation experiment. Lead and chromium pose a minimal hazard from dredging because they are bonded to relatively insoluble carbonate, phosphate, phyllosilicate, or oxide minerals that are stable in seawater. These results point out the specific chemical behavior of individual metals in estuarine sediments, and the need for direct confirmation of metal speciation in order to constrain predictive models that realistically assess the fate of metals in urban harbors and coastal sediments.

  5. Effect of pre-oxidation and environmental aging on the seal strength of a novel high-temperature solid oxide fuel cell (SOFC) sealing glass with metallic interconnect

    SciTech Connect (OSTI)

    Chou, Y. S.; Stevenson, Jeffry W.; Singh, Prabhakar

    2008-09-15T23:59:59.000Z

    A novel high-temperature alkaline-earth silicate sealing glass was developed for solid oxide fuel cell (SOFC) applications. The glass was used to join two ferritic stainless steel coupons for strength evaluation. The steel coupons were pre-oxidized at elevated temperatures to promote thick oxide layers to simulate long-term exposure conditions. In addition, seals to as-received metal coupons were also tested after aging in oxidizing or reducing environments to simulate the actual SOFC environment. Room temperature tensile testing showed strength degradation when using pre-oxidized coupons, and more extensive degradation after aging in air. Fracture surface and microstructural analysis confirmed that the cause of degradation was formation of SrCrO4 at the outer sealing edges exposed to air.

  6. Study of microstructure and semiconductor to metallic conductivity transition in solid state sintered Li{sub 0.5}Mn{sub 0.5}Fe{sub 2}O{sub 4??} spinel ferrite

    SciTech Connect (OSTI)

    Bhowmik, R. N., E-mail: rnbhowmik.phy@pondiuni.edu.in; Vijayasri, G. [Department of Physics, Pondicherry University, R. Venkataraman Nagar, Kalapet, Puducherry-605 014 (India)

    2013-12-14T23:59:59.000Z

    Li{sub 0.5}Mn{sub 0.5}Fe{sub 2}O{sub 4} ferrite has been prepared by solid state sintering route. XRD pattern showed single phased cubic spinel structure. The samples exhibited typical character of plastoferrite with ring shaped surface microstructure. New feature observed in the present ferrite is the frequency activated conductivity transition from semiconductor to metallic state above 800?K. The increase of conductivity with frequency in the semiconducting regime follows Jonscher power law, while decrease of conductivity in metallic regime obeys Drude equation. The conductivity in semiconductor regime has been understood by hopping mechanism of localized charge carriers among the cations in B sites of cubic spinel structure. At higher temperatures, overlapping of electronic orbitals from neighbouring ions and free particle like motion of lighter Li{sup +} ions among interstitial lattices contributed metallic conductivity. The samples provided evidence of localized nature of the charge carriers at lower temperatures and increasing delocalized character with the increase of measurement temperature. From application point of view, such ferrites behave as semiconductor at low temperature and allow electromagnetic wave to pass through, but transform into a metallic reflector with negative dielectric constant at high temperature.

  7. On the State of the Art of Metal Interconnects for SOFC Application

    SciTech Connect (OSTI)

    Jablonski@netl.doe.gov

    2011-02-27T23:59:59.000Z

    One of the recent developments for Solid Oxide Fuel Cells (SOFC) is oxide component materials capable of operating at lower temperatures such as 700-800C. This lower temperature range has provided for the consideration of metallic interconnects which have several advantages over ceramic interconnects: low cost, ease in manufacturing, and high conductivity. Most metals and alloys will oxidize under both the anode and cathode conditions within an SOFC, thus a chief requirement is that the base metal oxide scale must be electrically conductive since this constitutes the majority of the electrical resistance in a metallic interconnect. Common high temperature alloys form scales that contain chrome, silicon and aluminum oxides among others. Under SOFC operating conditions chrome oxide is a semi-conductor while silicon and aluminum oxides are insulators. In this talk we will review the evolution in candidate alloys and surface modifications which constitute an engineered solution for SOFC interconnect applications.

  8. Ab initio study of lithium intercalation in metal oxides and metal dichalcogenides M. K. Aydinol, A. F. Kohan, and G. Ceder

    E-Print Network [OSTI]

    Ceder, Gerbrand

    -metal-oxides due to their application potential as rechargeable battery electrodes1 and electrochromic displays.2. In electrochromic applications, band filling is used to adjust the electronic and optical properties.3 Figure 1-potential difference between cathode and anode is desirable as this leads to a high OCV. For electrochromic

  9. Controlled growth of semiconductor crystals

    DOE Patents [OSTI]

    Bourret-Courchesne, E.D.

    1992-07-21T23:59:59.000Z

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  10. Controlled growth of semiconductor crystals

    DOE Patents [OSTI]

    Bourret-Courchesne, Edith D. (Richmond, CA)

    1992-01-01T23:59:59.000Z

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  11. Catalytic hydrogenation and gas permeation properties of metal-containing poly(phenylene oxide) and polysulfone

    SciTech Connect (OSTI)

    Hanrong Gao; Yun Xu; Shijian Liao; Ren Liu; Daorong Yu (Chinese Academy of Sciences, Dalian (China). Dalian Inst. of Chemical Physics)

    1993-11-10T23:59:59.000Z

    Metal-containing polymers, PPL-DPP-Pd, PPO-CPA-Pd, PSF-DPP-Pd, PSF-CPA-Pd (PDD = diphenylphosphinyl, CPA = o-carboxy phenyl amino), PPO-M (M = Pd,Cu,Co,Ni), and PSF-Pd, were prepared by incorporating metal chloride with either modified or unmodified poly(2,6-dimethyl-1,4-phenylene oxide) (PPO) and polysulfone (PSF). The Pd-containing polymers exhibit catalytic activity in the hydrogenation of cyclopentadiene under mild conditions both in alcohol solution and in the gas phase. The selectivity in the hydrogenation of diene to monoene in the gas phase can be controlled by adjusting the hydrogen partial pressure. The metal-containing polymers, PPL-M and PSF-Pd, can be cast easily into the membranes. The H[sub 2]/N[sub 2] permselectivity for PPO-M is higher than that for unmodified PPO, whereas the permeability of H[sub 2] changes slightly. The H[sub 2] permeability and H[sub 2]/N[sub 2] permselectivity for the PPO-Pd membrane are up to 67.5 barrers and 135, respectively.

  12. Method and apparatus for preparation of spherical metal carbonates and lithium metal oxides for lithium rechargeable batteries

    DOE Patents [OSTI]

    Kang, Sun-Ho (Naperville, IL); Amine, Khalil (Downers Grove, IL)

    2008-10-14T23:59:59.000Z

    A number of materials with the composition Li.sub.1+xNi.sub..alpha.Mn.sub..beta.Co.sub..gamma.M'.sub..delta.O.sub.2-- zF.sub.z (M'=Mg,Zn,Al,Ga,B,Zr,Ti) for use with rechargeable batteries, wherein x is between about 0 and 0.3, .alpha. is between about 0.2 and 0.6, .beta. is between about 0.2 and 0.6, .gamma. is between about 0 and 0.3, .delta. is between about 0 and 0.15, and z is between about 0 and 0.2. Adding the above metal and fluorine dopants affects capacity, impedance, and stability of the layered oxide structure during electrochemical cycling. Another aspect of the invention includes materials with the composition Li.sub.1+xNi.sub..alpha.Co.sub..beta.Mn.sub..gamma.M'.sub..delta.O.sub.yF- .sub.z (M'=Mg,Zn,Al,Ga,B,Zr,Ti), where the x is between 0 and 0.2, the .alpha. between 0 and 1, the .beta. between 0 and 1, the .gamma. between 0 and 2, the .delta. between about 0 and about 0.2, the y is between 2 and 4, and the z is between 0 and 0.5.

  13. Design Principles for Oxygen-Reduction Activity on Perovskite Oxide Catalysts for Fuel Cells and Metal-air Batteries

    SciTech Connect (OSTI)

    J Suntivich; H Gasteiger; N Yabuuchi; H Nakanishi; J Goodenough; Y Shao-Horn

    2011-12-31T23:59:59.000Z

    The prohibitive cost and scarcity of the noble-metal catalysts needed for catalysing the oxygen reduction reaction (ORR) in fuel cells and metal-air batteries limit the commercialization of these clean-energy technologies. Identifying a catalyst design principle that links material properties to the catalytic activity can accelerate the search for highly active and abundant transition-metal-oxide catalysts to replace platinum. Here, we demonstrate that the ORR activity for oxide catalysts primarily correlates to {sigma}*-orbital (e{sub g}) occupation and the extent of B-site transition-metal-oxygen covalency, which serves as a secondary activity descriptor. Our findings reflect the critical influences of the {sigma}* orbital and metal-oxygen covalency on the competition between O{sub 2}{sup 2-}/OH{sup -} displacement and OH{sup -} regeneration on surface transition-metal ions as the rate-limiting steps of the ORR, and thus highlight the importance of electronic structure in controlling oxide catalytic activity.

  14. A microstructural approach toward the effect of thickness on semiconductor-to-metal transition characteristics of VO{sub 2} epilayers

    SciTech Connect (OSTI)

    Molaei, R., E-mail: rmolaei@ncsu.edu; Wu, F.; Narayan, J. [Department of Materials Science and Engineering, North Carolina State University, EB-1, Raleigh, North Carolina 27695-7907 (United States); Bayati, R. [Intel Corporation, IMO-SC, SC2, Santa Clara, California 95054 (United States)

    2014-04-28T23:59:59.000Z

    We report the control of semiconductor to metal transition in VO{sub 2}(010) epilayers integrated with Si(100) substrates buffered with an NiO[111]/YSZ[100] intermediate layer. VO{sub 2} epitaxial thin films were grown at different thicknesses varying from 10 to 200?nm using pulsed laser deposition technique. An epitaxial relationship of VO{sub 2}(010)?NiO(111)? YSZ(001)?Si(001) and VO{sub 2}[100]?NiO[110]? YSZ[100]?Si[100] was established at room temperature. The crystallographic alignment across the VO{sub 2}/NiO interface changes to VO{sub 2}(100)?NiO(111) and VO{sub 2}[001]?NiO[110] at the temperature of growth giving rise to a misfit strain of about 33.5% and 3.0% along two orthogonal in-plane orientations. The transition temperature was observed to vary from about 353 to 341?K, the transition amplitude increased by about five orders of magnitude, and the hysteresis decreased to about 3?K, as the thickness of VO{sub 2} layers increased from about 10 to 200?nm. These observations were explained based on strain characteristics, overall defect content and grain boundaries, and phenomenological thermodynamic models.

  15. Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

    SciTech Connect (OSTI)

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2012-07-23T23:59:59.000Z

    AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) structure is analyzed by using capacitance-frequency-temperature (C-f-T) mapping. Applying sputtering-deposited AlN, we attained AlN/AlGaN/GaN MIS heterostructure field-effect transistors with much suppressed gate leakage currents, but exhibiting frequency dispersion in C-V characteristics owing to high-density AlN/AlGaN interface states. In order to investigate the interface states deteriorating the device performance, we measured temperature-dependent frequency dispersion in the C-V characteristics. As a result, we obtained C-f-T mapping, whose analysis gives the activation energies of electron trapping, namely the interface state energy levels, for a wide range of the gate biases. This analysis method is auxiliary to the conventional conductance method, serving as a valuable tool for characterization of wide-bandgap devices with deep interface states. From the analysis, we can directly evaluate the gate-control efficiency of the devices.

  16. Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: A comparison with Schottky devices

    SciTech Connect (OSTI)

    Le, Son Phuong; Nguyen, Tuan Quy; Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu, E-mail: tosikazu@jaist.ac.jp [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2014-08-07T23:59:59.000Z

    We have systematically investigated low-frequency noise (LFN) in AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) devices, where the AlN gate insulator layer was sputtering-deposited on the AlGaN surface, in comparison with LFN in AlGaN/GaN Schottky devices. By measuring LFN in ungated two-terminal devices and heterojunction field-effect transistors (HFETs), we extracted LFN characteristics in the intrinsic gated region of the HFETs. Although there is a bias regime of the Schottky-HFETs in which LFN is dominated by the gate leakage current, LFN in the MIS-HFETs is always dominated by only the channel current. Analyzing the channel-current-dominated LFN, we obtained Hooge parameters ? for the gated region as a function of the sheet electron concentration n{sub s} under the gate. In a regime of small n{sub s}, both the MIS- and Schottky-HFETs exhibit ??n{sub s}{sup ?1}. On the other hand, in a middle n{sub s} regime of the MIS-HFETs, ? decreases rapidly like n{sub s}{sup ??} with ????2-3, which is not observed for the Schottky-HFETs. In addition, we observe strong increase in ??n{sub s}{sup 3} in a large n{sub s} regime for both the MIS- and Schottky-HFETs.

  17. Oxidation/corrosion of metallic and ceramic materials in an aluminum remelt furnace. [For fluidized bed waste heat recovery systems

    SciTech Connect (OSTI)

    Federer, J.I.; Jones, P.J.

    1985-12-01T23:59:59.000Z

    Both metallic alloys and ceramic materials are candidates for the distributor plate and other components of fluidized bed waste heat recovery (FBWHR) systems. Eleven Fe-, Ni-, and Co-base alloys were exposed to air at elevated temperatures in laboratory furnaces and to flue gases in an aluminum remelt furnace to assess their resistance to oxidation and corrosion. Four SiC ceramics and two oxide ceramics were also tested in the aluminum remelt furnace. Some alloys were coated with aluminum or SiO2 by commercial processes in an effort to enhance their oxidation and corrosion resistance.

  18. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, Xiaonan (Golden, CO); Sheldon, Peter (Lakewood, CO)

    1998-01-01T23:59:59.000Z

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  19. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, X.; Sheldon, P.

    1998-01-27T23:59:59.000Z

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  20. Heterojunction thin films based on multifunctional metal oxides for photovoltaic application

    SciTech Connect (OSTI)

    Prabhu, M.; Soundararajan, N.; Ramachandran, K. [School of Physics, Madurai Kamaraj University, Madurai - 625021 (India); Marikkannan, M.; Mayandi, J. [School of Chemistry, Madurai Kamaraj University, Madurai - 625021 (India)

    2014-04-24T23:59:59.000Z

    Metal oxides based multifunctional heterojunction thin films of ZnO/SnO{sub 2} and ZnO/SnO{sub 2}/CuO QDs were prepared by spin-coating technique. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The optical absorption studies revealed that the film thickness has considerable effect on the band gap values and is found to be in the range of 3.73–3.48 eV. The photoluminescence spectra showed several weak visible emission peaks related to the deep level defects (450-575 nm). Finally, the current density-voltage (J-V) characteristic of ZnO/SnO{sub 2}/CuO QDs (ZSCI) based heterojunction thin film coated on ITO is also reported.

  1. Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

    SciTech Connect (OSTI)

    Xiao, Di [ORNL; Zhu, Wenguang [University of Tennessee, Knoxville (UTK); Ran, Ying [Boston College, Chestnut Hill; Nagaosa, Naoto [University of Tokyo, Tokyo, Japan; Okamoto, Satoshi [ORNL

    2011-01-01T23:59:59.000Z

    Topological insulators (TIs) are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of TIs, material realization is indispensable. Here we predict, based on tight-binding modeling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional TIs. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO$_3$ bilayers have a topologically non-trivial energy gap of about 0.15~eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in $e_g$ systems are also discussed.

  2. HEU to LEU conversion and blending facility: Metal blending alternative to produce LEU oxide for disposal

    SciTech Connect (OSTI)

    NONE

    1995-09-01T23:59:59.000Z

    US DOE is examining options for disposing of surplus weapons-usable fissile materials and storage of all weapons-usable fissile materials. The nuclear material is converted to a form more proliferation- resistant than the original form. Blending HEU (highly enriched uranium) with less-enriched uranium to form LEU has been proposed as a disposition option. Five technologies are being assessed for blending HEU. This document provides data to be used in environmental impact analysis for the HEU-LEU disposition option that uses metal blending with an oxide waste product. It is divided into: mission and assumptions, conversion and blending facility descriptions, process descriptions and requirements, resource needs, employment needs, waste and emissions from plant, hazards discussion, and intersite transportation.

  3. Method for producing metal oxide aerogels having densities less than 0. 02 g/cc

    DOE Patents [OSTI]

    Tillotson, T.M.; Poco, J.F.; Hrubesh, L.W.; Thomas, I.M.

    1994-01-04T23:59:59.000Z

    A two-step method is described for making transparent aerogels which have a density of less than 0.003 g/cm[sup 3] to those with a density of more than 0.8 g/cm[sup 3], by a sol/gel process and supercritical extraction. Condensed metal oxide intermediate made with purified reagents can be diluted to produce stable aerogels with a density of less than 0.02 g/cm[sup 3]. High temperature, direct supercritical extraction of the liquid phase of the gel produces hydrophobic aerogels which are stable at atmospheric moisture conditions. Monolithic, homogeneous silica aerogels with a density of less than 0.02 to higher than 0.8 g/cm[sup 3], with high thermal insulation capacity, improved mechanical strength and good optical transparency, are described. 7 figures.

  4. Method for producing metal oxide aerogels having densities less than 0.02 g/cc

    DOE Patents [OSTI]

    Tillotson, Thomas M. (Tracy, CA); Poco, John F. (Livermore, CA); Hrubesh, Lawrence W. (Pleasanton, CA); Thomas, Ian M. (Livermore, CA)

    1994-01-01T23:59:59.000Z

    A two-step method is described for making transparent aerogels which have a density of less than 0.003 g/cm.sup.3 to those with a density of more than 0.8 g/cm.sup.3, by a sol/gel process and supercritical extraction. Condensed metal oxide intermediate made with purified reagents can be diluted to produce stable aerogels with a density of less than 0.02 g/cm.sup.3. High temperature, direct supercritical extraction of the liquid phase of the gel produces hydrophobic aerogels which are stable at atmospheric moisture conditions. Monolithic, homogeneous silica aerogels with a density of less than 0.02 to higher than 0.8 g/cm.sup.3, with high thermal insulation capacity, improved mechanical strength and good optical transparency, are described.

  5. Transition Metal Dopants Essential for Producing Ferromagnetism...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Metal Dopants Essential for Producing Ferromagnetism in Metal Oxide Nanoparticles. Transition Metal Dopants Essential for Producing Ferromagnetism in Metal Oxide Nanoparticles....

  6. TECHNOLOGICAL IMPROVEMENTS OF A METAL OXIDE GAS MULTI-SENSOR BASED ON A MICRO-HOTPLATE STRUCTURE AND INKJET DEPOSI-

    E-Print Network [OSTI]

    (CO-100ppm, NO2-0.2ppm, NH3- 5ppm and C2H4O-2ppm). Keywords: Gas Sensors, Metal Oxides (MOX), Micro on the fact that the current/voltage characteristic of MOX films exhibits a non-linear behavior [7]. More presented here aims at presenting and characterizing an optimized MOX multi-sensor struc- ture developed

  7. Pressure-Volume-Temperature Studies of Metal-Oxide Pairs [1] Cottrell E. et al. (2007) This meeting.

    E-Print Network [OSTI]

    Campbell, Andrew

    2007-01-01T23:59:59.000Z

    for the two phases. fO2 Buffers at High Pressure For the general metal-oxide reaction M + x/2 O2 = MOx, the fO2 is related to the Gibbs energies (G) by x/2 RT ln fO2 = G(MOx) ­ G(M). The pressure effect

  8. Fast photoreactions of ethanol and MTBE on tropospheric metal oxide particles

    SciTech Connect (OSTI)

    Idriss, H.; Seebauer, E.G. [Univ. of Illinois, Urbana, IL (United States)

    1995-12-31T23:59:59.000Z

    Ethanol (EtOH) and tert-Butyl methyl ether (MTBE) are both finding increased use as oxygenated additives to fuels. However, the environmental fate in the troposphere of these species is unclear when they escape as fugitive emissions. In several locations there are reports of human illness in response to MTBE in particular. Volatile organic compounds (VOC`s) such as these are generally thought to react by a variety of homogeneous free-radical mechanisms, usually beginning with attack by OH radical. However, we show by laboratory kinetic studies that the heterogeneous photoreaction on solid suspended metal-oxide particulates such as fly ash proceeds with a comparable rate, especially in urban environments. EtOH reacts to form acetaldehyde, and EtOH forms isobutene, methanol, and formaldehyde. Our work appears to be the first-ever demonstration that VOC`s can react as fast by a heterogeneous mechanism as by a homogeneous one in the atmosphere. Experiments by various optical and kinetic techniques show that the active phases in fly ash are Fe oxides, which are fairly abundant in other atmospheric particulates as well.

  9. PHYSICAL REVIEW B 87, 184433 (2013) Mean-field simulation of metal oxide antiferromagnetic films and multilayers

    E-Print Network [OSTI]

    Hellman, Frances

    2013-01-01T23:59:59.000Z

    a lightly doped semiconductor, in a new type of magnetic semiconductor.19 The findings of that work-coupled multilayers of magnetic semiconductors with uncompensated AFM films. The magnetizat

  10. Variation of the shape and morphological properties of silica and metal oxide powders by electro homogeneous precipitation

    DOE Patents [OSTI]

    Harris, M.T.; Basaran, O.A.; Sisson, W.G.; Brunson, R.R.

    1997-02-18T23:59:59.000Z

    The present invention provides a method for preparing irreversible linear aggregates (fibrils) of metal oxide powders by utilizing static or pulsed DC electrical fields across a relatively non-conducting liquid solvent in which organometal compounds or silicon alkoxides have been dissolved. The electric field is applied to the relatively non-conducting solution throughout the particle formation and growth process promoting the formation of either linear aggregates (fibrils) or spherical shaped particles as desired. Thus the present invention provides a physical method for altering the size, shape and porosity of precursor hydrous metal oxide or hydrous silicon oxide powders for the development of advanced ceramics with improved strength and insulating capacity. 3 figs.

  11. Comparison of monolith-supported metals for the direct oxidation of methane of syngas

    SciTech Connect (OSTI)

    Torniainen, P.M.; Chu, X.; Schmidt, L.D. (Univ. of Minnesota, Minneapolis (United States))

    1994-03-01T23:59:59.000Z

    The partial oxidation of CH[sub 4] in O[sub 2] near atmospheric pressure to produce syngas was investigated on monolith-supported Rh, Ni, Pt, Ir, Pd, Pd-La[sub 2]O[sub 3], Fe, Co, Re, and Ru catalysts in an autothermal flow reactor at residence times of [approximately]10 msec (GHSV [approximately] 100,000 hr[sup [minus]1]). Optimal CH[sub 4] conversion and CO and H[sub 2] selectivities of 0.89, 0.95, and 0.90, respectively, were achieved on Rh at 1000[angstrom]C with no loss in activity over many hours. Ni showed similar conversion and selectivities but deactivated. Experiments with up to 25 vol% H[sub 2]O added to the feed showed little evidence of the occurrence of steam reforming and water-gas shift reactions. Pt and Ir sustained stable reaction but a lower selectivities and conversion than Rh or Ni. Pd, Pd-La[sub 2]O[sub 3], and Co deactivated rapidly, while Re, Ru, and Fe would not sustain autothermal reaction. Ni and Re deactivated by volatilization and metal loss, while Pd-La[sub 2]O[sub 3] deactivated by carbon formation, and Pd deactivated by a combination of metal loss and carbon formation. Pd produced up to 14% selectivity to C[sub 2]H[sub 4] and C[sub 2]H[sub 4] and C[sub 2]H[sub 6], Pd-La[sub 2]O[sub 3] up to 5%, Pt [approximately] 1%, and other metals less than 0.2%. 10 refs., 5 figs., 1 tab.

  12. Wide band gap semiconductor templates

    DOE Patents [OSTI]

    Arendt, Paul N. (Los Alamos, NM); Stan, Liliana (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); DePaula, Raymond F. (Santa Fe, NM); Usov, Igor O. (Los Alamos, NM)

    2010-12-14T23:59:59.000Z

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  13. SEMICONDUCTOR DETECTORS - AN INTRODUCTION

    E-Print Network [OSTI]

    Goulding, F.S.

    2011-01-01T23:59:59.000Z

    infrinfc primely owned dtfiw. SEMICONDUCTOR DETECTORS - ANi) LBL-7282 I. History Semiconductor detectors appeared onof alpha particles by semiconductor diodes several years

  14. Isotopically controlled semiconductors

    E-Print Network [OSTI]

    Haller, E.E.

    2004-01-01T23:59:59.000Z

    and phonons in semiconductors,” J. Non-Cryst. Solids 141 (LVM) Spectroscopy of Semiconductors,” Mat. Res. Soc. Symp.Isotopically Engineered Semiconductors – New Media for the

  15. Isotopically controlled semiconductors

    E-Print Network [OSTI]

    Haller, Eugene E.

    2001-01-01T23:59:59.000Z

    Transmutation Doping of Semiconductor Materials, NationalTransmutation Doping of Semiconductor Materials, NationalProperties of Doped Semiconductors , Solid State Series,

  16. Semiconductor Nanowires: What's Next?

    E-Print Network [OSTI]

    Yang, Peidong

    2011-01-01T23:59:59.000Z

    Semiconductor nanowires, what’s next? Peidong Yang, Ruoxuelater research into semiconductor whiskers with nanoscalewere popularized as semiconductor nanowires in the following

  17. Energetics of Electron Transfer at the Nanocrystalline Titanium Dioxide Semiconductor/ Aqueous Solution Interface: pH Invariance of the Metal-Based Formal Potential of a

    E-Print Network [OSTI]

    Energetics of Electron Transfer at the Nanocrystalline Titanium Dioxide Semiconductor/ Aqueous,4-(CH2PO3)-2,2-bipyridine)3 10-, bound to a nanocrystalline titanium dioxide film shows energy (ECB) of the underlying semiconductor electrode in response to the same environmental

  18. Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Arenas, D. J. [Univ. of North Florida, Jacksonville, FL (United States); Shim, Dongha [Univ. of Florida, Gainesville, FL (United States); Koukis, D. I. [Univ. of Florida, Gainesville, FL (United States); Seok, Eunyoung [Univ. of Florida, Gainesville, FL (United States); Texas Instruments, Dallas, TX (United States); Tanner, D. B. [Univ. of Florida, Gainesville, FL (United States); O, Kenneth K. [Univ. of Texas, Dallas, TX (United States)

    2011-01-01T23:59:59.000Z

    Optical methods for measuring of the emission spectra of oscillator circuits operating in the 400-600 GHz range are described. The emitted power from patch antennas included in the circuits is measured by placing the circuit in the source chamber of a Fourier-transform interferometric spectrometer. The results show that this optical technique is useful for measuring circuits pushing the frontier in operating frequency. The technique also allows the characterization of the circuit by measuring the power radiated in the fundamental and in the harmonics. This capability is useful for oscillator architectures designed to cancel the fundamental and use higher harmonics. The radiated power was measured using two techniques: direct measurement of the power by placing the device in front of a bolometer of known responsivity, and by comparison to the estimated power from blackbody sources. The latter technique showed that these circuits have higher emission than blackbody sources at the operating frequencies, and, therefore, offer potential spectroscopy applications.

  19. Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Arenas, D. J.; Shim, Dongha; Koukis, D. I.; Seok, Eunyoung; Tanner, D. B.; O, Kenneth K.

    2011-01-01T23:59:59.000Z

    Optical methods for measuring of the emission spectra of oscillator circuits operating in the 400-600 GHz range are described. The emitted power from patch antennas included in the circuits is measured by placing the circuit in the source chamber of a Fourier-transform interferometric spectrometer. The results show that this optical technique is useful for measuring circuits pushing the frontier in operating frequency. The technique also allows the characterization of the circuit by measuring the power radiated in the fundamental and in the harmonics. This capability is useful for oscillator architectures designed to cancel the fundamental and use higher harmonics. Themore »radiated power was measured using two techniques: direct measurement of the power by placing the device in front of a bolometer of known responsivity, and by comparison to the estimated power from blackbody sources. The latter technique showed that these circuits have higher emission than blackbody sources at the operating frequencies, and, therefore, offer potential spectroscopy applications.« less

  20. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S. [Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-11, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); Kodera, T., E-mail: kodera.t.ac@m.titech.ac.jp [Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-11, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-NE-25, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Takeda, K.; Obata, T. [Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Tarucha, S. [Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); RIKEN, Center for Emergent Matter Science (CEMS), 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan)

    2014-05-28T23:59:59.000Z

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  1. Selective Chemistry of Metal Oxide Atomic Layer Deposition on Si Based Substrate Surfaces

    E-Print Network [OSTI]

    Guo, Lei

    2015-01-01T23:59:59.000Z

    Solar Energy Materials and Solar Cells, 2010. 94(12): p.and prospects for solar cell manufacturing. SemiconductorShuttles in Dye-Sensitized Solar Cells. Journal of Physical

  2. MICROSTRUCTURE-PROPERTY RELATIONSHIPS OF A ZINC OXIDE VARISTOR MATERIAL

    E-Print Network [OSTI]

    Williama, Pamela Louise

    2011-01-01T23:59:59.000Z

    RELATIONSHIPS OF A ZINC OXIDE VARISTOR MATERIAL Pamelaresistors, and zinc oxide varistors are semiconductorRELATIONSHIPS OF A ZINC OXIDE VARISTOR MATERIAL CONTENTS

  3. High-Temperature Zirconia Oxygen Sensor with Sealed Metal/Metal...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    High-Temperature Zirconia Oxygen Sensor with Sealed MetalMetal Oxide Internal Reference High-Temperature Zirconia Oxygen Sensor with Sealed MetalMetal Oxide Internal Reference...

  4. Probing the structural dependency of photoinduced properties of colloidal quantum dots using metal-oxide photo-active substrates

    SciTech Connect (OSTI)

    Patty, Kira; Campbell, Quinn; Hamilton, Nathan; West, Robert G. [Department of Physics, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States); Sadeghi, Seyed M., E-mail: seyed.sadeghi@uah.edu [Department of Physics, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States); Nano and Micro Device Center, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States); Mao, Chuanbin [Department of Chemistry and Biochemistry, Stephenson Life Sciences Research Center, University of Oklahoma, Norman, Oklahoma 73019 (United States)

    2014-09-21T23:59:59.000Z

    We used photoactive substrates consisting of about 1 nm coating of a metal oxide on glass substrates to investigate the impact of the structures of colloidal quantum dots on their photophysical and photochemical properties. We showed during irradiation these substrates can interact uniquely with such quantum dots, inducing distinct forms of photo-induced processes when they have different cores, shells, or ligands. In particular, our results showed that for certain types of core-shell quantum dot structures an ultrathin layer of a metal oxide can reduce suppression of quantum efficiency of the quantum dots happening when they undergo extensive photo-oxidation. This suggests the possibility of shrinking the sizes of quantum dots without significant enhancement of their non-radiative decay rates. We show that such quantum dots are not influenced significantly by Coulomb blockade or photoionization, while those without a shell can undergo a large amount of photo-induced fluorescence enhancement via such blockade when they are in touch with the metal oxide.

  5. Fluorescence-based detection methodologies for nitric oxide using transition metal scaffolds

    E-Print Network [OSTI]

    Hilderbrand, Scott A. (Scott Alan), 1976-

    2004-01-01T23:59:59.000Z

    Chapter 1. Fluorescence-Based Detection Methodologies for Nitric Oxide: A Review. Chapter 2. Cobalt Chemistry with Mixed Aminotroponimine Salicylaldimine Ligands: Synthesis, Characterization, and Nitric Oxide Reactivity. ...

  6. Photodeposition of Pt on Colloidal CdS and CdSe/CdS Semiconductor Nanostructures

    SciTech Connect (OSTI)

    Dukovic, Gordana; Merkle, Maxwell G.; Nelson, James H.; Hughes, Steven M.; Alivisatos, A. Paul

    2008-08-06T23:59:59.000Z

    Semiconductor photocatalysis has been identified as a promising avenue for the conversion of solar energy into environmentally friendly fuels, most notably by the production of hydrogen from water.[1-5] Nanometer-scale materials in particular have attracted considerable scientific attention as the building blocks for light-harvesting applications.[6,7] Their desirable attributes include tunability of the optical properties with size, amenability to relatively inexpensive low-temperature processing, and a high degree of synthetic sophistication leading to increasingly complex and multi-functional architectures. For photocatalysis in particular, the high surface-to-volume ratios in nanoscale materials should lead to an increased availability of carriers for redox reactions on the nanoparticle surface. Recombination of photoexcited carriers directly competes with photocatalytic activity.[3] Charge separation is often achieved with multi-component heterostructures. An early example is the case of TiO2 powders functionalized with Pt and RuO2 particles, where photoexcited electrons are transferred to Pt (the reduction site) and holes to RuO2 (the oxidation site).[8] More recently, many colloidally synthesized nanometer-scale metal-semiconductor heterostructures have been reported.[7,9,10] A majority of these structures are made by thermal methods.[7,10] We have chosen to study photochemical formation of metal-semiconductor heterostructures. The detailed understanding of the mechanisms involved in photodeposition of metals on nanometer-scale semiconductors is necessary to enable a high degree of synthetic control. At the same time, because the results of metal deposition can be directly observed by electron microscopy, it can be used to understand how factors such as nanocrystal composition, shape, carrier dynamics, and surface chemistry influence the photochemical properties of semiconductor nanocrystals. In this communication, we report on the photodeposition of Pt on colloidal CdS and CdSe/CdS core/shell nanocrystals. Among the II-VI semiconductors, CdS is of particular interest because it has the correct band alignment for water photolysis[2] and has been demonstrated to be photocatalytically active.[11-16] We have found that the photoexcitation of CdS and CdSe/CdS in the presence of an organometallic Pt precursor leads to deposition of Pt nanoparticles on the semiconductor surface. Stark differences are observed in the Pt nanoparticle location on the two substrates, and the photodeposition can be completely inhibited by the modification of the semiconductor surface. Our results suggest that tuning of the semiconductor band structure, spatial organization and surface chemistry should be crucial in the design of photocatalytic nanostructures.

  7. Ultra-stable Molecule-Surface Architectures at Metal Oxides: Structure, Bonding, and Electron-transfer Processes

    SciTech Connect (OSTI)

    Hamers, Robert John

    2013-12-07T23:59:59.000Z

    Research funded by this project focused on the development of improved strategies for functionalization of metal oxides to enhance charge?transfer processes relevant to solar energy conversion. Initial studies included Fe2O3, WO3, TiO2, SnO2, and ZnO as model oxide systems; these systems were chosen due to differences in metal oxidation state and chemical bonding types in these oxides. Later studies focused largely on SnO2 and ZnO, as these materials show particularly promising surface chemistry, have high electron mobility, and can be readily grown in both spherical nanoparticles and as elongated nanorods. New molecules were synthesized that allowed the direct chemical assembly of novel nanoparticle ?dyadic? structures in which two different oxide materials are chemically joined, leading to an interface that enhances the separation of of charge upon illumination. We demonstrated that such junctions enhance photocatalytic efficiency using model organic compounds. A separate effort focused on novel approaches to linking dye molecules to SnO2 and ZnO as a way to enhance solar conversion efficiency. A novel type of surface binding through

  8. REFORMULATION OF COAL-DERIVED TRANSPORTATION FUELS: SELECTIVE OXIDATION OF CARBON MONOXIDE ON METAL FOAM CATALYSTS

    SciTech Connect (OSTI)

    Mr. Paul Chin; Dr. Xiaolei Sun; Professor George W. Roberts; Professor James J. Spivey; Mr. Amornmart Sirijarhuphan; Dr. James G. Goodwin, Jr.; Dr. Richard W. Rice

    2002-12-31T23:59:59.000Z

    Several different catalytic reactions must be carried out in order to convert hydrocarbons (or alcohols) into hydrogen for use as a fuel for polyelectrolyte membrane (PEM) fuel cells. Each reaction in the fuel-processing sequence has a different set of characteristics, which influences the type of catalyst support that should be used for that particular reaction. A wide range of supports are being evaluated for the various reactions in the fuel-processing scheme, including porous and non-porous particles, ceramic and metal straight-channel monoliths, and ceramic and metal monolithic foams. These different types of support have distinctly different transport characteristics. The best choice of support for a given reaction will depend on the design constraints for the system, e.g., allowable pressure drop, and on the characteristics of the reaction for which the catalyst is being designed. Three of the most important reaction characteristics are the intrinsic reaction rate, the exothermicity/endothermicity of the reaction, and the nature of the reaction network, e.g., whether more than one reaction takes place and, in the case of multiple reactions, the configuration of the network. Isotopic transient kinetic analysis was used to study the surface intermediates. The preferential oxidation of low concentrations of carbon monoxide in the presence of high concentrations of hydrogen (PROX) is an important final step in most fuel processor designs. Data on the behavior of straight-channel monoliths and foam monolith supports will be presented to illustrate some of the factors involved in choosing a support for this reaction.

  9. Doped palladium containing oxidation catalysts

    DOE Patents [OSTI]

    Mohajeri, Nahid

    2014-02-18T23:59:59.000Z

    A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

  10. Time-Resolved XAFS Spectroscopic Studies of B-H and N-H Oxidative Addition to Transition Metal Catalysts Relevant to Hydrogen Storage

    SciTech Connect (OSTI)

    Bitterwolf, Thomas E. [University of Idaho

    2014-12-09T23:59:59.000Z

    Successful catalytic dehydrogenation of aminoborane, H3NBH3, prompted questions as to the potential role of N-H oxidative addition in the mechanisms of these processes. N-H oxidative addition reactions are rare, and in all cases appear to involve initial dative bonding to the metal by the amine lone pairs followed by transfer of a proton to the basic metal. Aminoborane and its trimethylborane derivative block this mechanism and, in principle, should permit authentic N-H oxidative attrition to occur. Extensive experimental work failed to confirm this hypothesis. In all cases either B-H complexation or oxidative addition of solvent C-H bonds dominate the chemistry.

  11. Close-To-Practice Assessment Of Meat Freshness With Metal Oxide Sensor Microarray Electronic Nose

    SciTech Connect (OSTI)

    Musatov, V. Yu.; Sysoev, V. V. [Saratov State Technical University, ul. Polytechnicheskaya 77, 410054 Saratov (Russian Federation); Sommer, M.; Kiselev, I. [Forschungszentrum Karlsruhe, IMT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2009-05-23T23:59:59.000Z

    In this report we estimate the ability of KAMINA e-nose, based on a metal oxide sensor (MOS) microarray and Linear Discriminant Analysis (LDA) pattern recognition, to evaluate meat freshness. The received results show that, 1) one or two exposures of standard meat samples to the e-nose are enough for the instrument to recognize the fresh meat prepared by the same supplier with 100% probability; 2) the meat samples of two kinds, stored at 4 deg. C and 25 deg. C, are mutually recognized at early stages of decay with the help of the LDA model built independently under the e-nose training to each kind of meat; 3) the 3-4 training cycles of exposure to meat from different suppliers are necessary for the e-nose to build a reliable LDA model accounting for the supplier factor. This study approves that the MOS e-nose is ready to be currently utilised in food industry for evaluation of product freshness. The e-nose performance is characterized by low training cost, a confident recognition power of various product decay conditions and easy adjustment to changing conditions.

  12. Interaction of coal-derived synthesis gas impurities with solid oxide fuel cell metallic components

    SciTech Connect (OSTI)

    Marina, Olga A.; Pederson, Larry R.; Coyle, Christopher A.; Edwards, Danny J.; Chou, Y. S.; Cramer, Carolyn N.

    2010-05-28T23:59:59.000Z

    Chromium-containing iron-based alloys Crofer22 APU and SS 441 and nickel-based alloy Inconel600, all commonly used in a solid oxide fuel cell (SOFC) stack as interconnect materials, heat exchanger and gas feeding pipes, were exposed at 700-850oC to a synthetic coal gas containing ?2 ppm phosphine, arsine, sulfur and antimony. Samples were characterized by SEM/EDS and XRD to monitor the secondary phase formation. Exposure of ferritic stainless steels to P led to the formation of surface Cr-Mn-P-O and Fe-P-O compounds and increased temperatures accelerated the rate of interactions. Fewer interactions were observed after exposures to As and Sb. No sulfur containing compounds were found. Nickel-based alloy exhibited much stronger interactions with As and P in comparison with ferritic steels and the arsenic interactions were particularly strong. The difference between the iron- and nickel-based alloys is explained by the different chemistry and morphology of the scales grown on the alloy surfaces in coal gas. While P and As interactions with the metallic parts in the SOFC are likely to mitigate the nickel/zirconia anode poisoning, the other degradation mechanisms should be taken into consideration to avoid potential stack failures. Manganese spinels were found to be effective as phosphorus getters and could be used in coal gas cleanup.

  13. Synthesis of Metal Oxide Nanomaterials for Chemical Sensors by Molecular Beam Epitaxy

    SciTech Connect (OSTI)

    Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai

    2013-12-01T23:59:59.000Z

    Since the industrial revolution, detection and monitoring of toxic matter, chemical wastes, and air pollutants has become an important environmental issue. Thus, it leads to the development of chemical sensors for various environmental applications. The recent disastrous oil spills over the near-surface of ocean due to the offshore drilling emphasize the use of chemical sensors for prevention and monitoring of the processes that might lead to these mishaps.1, 2 Chemical sensors operated on a simple principle that the sensing platform undergoes a detectable change when exposed to the target substance to be sensed. Among all the types of chemical sensors, solid state gas sensors have attracted a great deal of attention due to their advantages such as high sensitivity, greater selectivity, portability, high stability and low cost.3, 4 Especially, semiconducting metal oxides such as SnO2, TiO2, and WO3 have been widely used as the active sensing platforms in solid state gas sensors.5 For the enhanced properties of solid state gas sensors, finding new sensing materials or development of existing materials will be needed. Thus, nanostructured materials such as nanotubes,6-8 nanowires,9-11 nanorods,12-15 nanobelts,16, 17 and nano-scale thin films18-23 have been synthesized and studied for chemical sensing applications.

  14. Final LDRD report : metal oxide films, nanostructures, and heterostructures for solar hydrogen production.

    SciTech Connect (OSTI)

    Kronawitter, Coleman X. [Lawrence Berkeley National Laboratory, Berkeley, CA; Antoun, Bonnie R.; Mao, Samuel S. [Lawrence Berkeley National Laboratory, Berkeley, CA

    2012-01-01T23:59:59.000Z

    The distinction between electricity and fuel use in analyses of global power consumption statistics highlights the critical importance of establishing efficient synthesis techniques for solar fuels-those chemicals whose bond energies are obtained through conversion processes driven by solar energy. Photoelectrochemical (PEC) processes show potential for the production of solar fuels because of their demonstrated versatility in facilitating optoelectronic and chemical conversion processes. Tandem PEC-photovoltaic modular configurations for the generation of hydrogen from water and sunlight (solar water splitting) provide an opportunity to develop a low-cost and efficient energy conversion scheme. The critical component in devices of this type is the PEC photoelectrode, which must be optically absorptive, chemically stable, and possess the required electronic band alignment with the electrochemical scale for its charge carriers to have sufficient potential to drive the hydrogen and oxygen evolution reactions. After many decades of investigation, the primary technological obstacle remains the development of photoelectrode structures capable of efficient conversion of light with visible frequencies, which is abundant in the solar spectrum. Metal oxides represent one of the few material classes that can be made photoactive and remain stable to perform the required functions.

  15. Improved layered mixed transition metal oxides for Li-ion batteries

    SciTech Connect (OSTI)

    Doeff, Marca M.; Conry, Thomas; Wilcox, James

    2010-03-05T23:59:59.000Z

    Recent work in our laboratory has been directed towards development of mixed layered transition metal oxides with general composition Li[Ni, Co, M, Mn]O2 (M=Al, Ti) for Li ion battery cathodes. Compounds such as Li[Ni1/3Co1/3Mn1/3]O2 (often called NMCs) are currently being commercialized for use in consumer electronic batteries, but the high cobalt content makes them too expensive for vehicular applications such as electric vehicles (EV), plug-in hybrid electric vehicles (PHEVs), or hybrid electric vehicles (HEVs). To reduce materials costs, we have explored partial or full substitution of Co with Al, Ti, and Fe. Fe substitution generally decreases capacity and results in poorer rate and cycling behavior. Interestingly, low levels of substitution with Al or Ti improve aspects of performance with minimal impact on energy densities, for some formulations. High levels of Al substitution compromise specific capacity, however, so further improvements require that the Ni and Mn content be increased and Co correspondingly decreased. Low levels of Al or Ti substitution can then be used offset negative effects induced by the higher Ni content. The structural and electrochemical characterization of substituted NMCs is presented in this paper.

  16. Investigation of Some Transparent Metal Oxides as Damp Heat Protective Coating for CIGS Solar Cells: Preprint

    SciTech Connect (OSTI)

    Pern, F. J.; Yan, F.; Zaaunbrecher, B.; To, B.; Perkins, J.; Noufi, R.

    2012-10-01T23:59:59.000Z

    We investigated the protective effectiveness of some transparent metal oxides (TMO) on CIGS solar cell coupons against damp heat (DH) exposure at 85oC and 85% relative humidity (RH). Sputter-deposited bilayer ZnO (BZO) with up to 0.5-um Al-doped ZnO (AZO) layer and 0.2-um bilayer InZnO were used as 'inherent' part of device structure on CdS/CIGS/Mo/SLG. Sputter-deposited 0.2-um ZnSnO and atomic layer deposited (ALD) 0.1-um Al2O3 were used as overcoat on typical BZO/CdS/CIGS/Mo/SLG solar cells. The results were all negative -- all TMO-coated CIGS cells exhibited substantial degradation in DH. Combining the optical photographs, PL and EL imaging, SEM surface micro-morphology, coupled with XRD, I-V and QE measurements, the causes of the device degradations are attributed to hydrolytic corrosion, flaking, micro-cracking, and delamination induced by the DH moisture. Mechanical stress and decrease in crystallinity (grain size effect) could be additional degrading factors for thicker AZO grown on CdS/CIGS.

  17. Wafer-fused semiconductor radiation detector

    DOE Patents [OSTI]

    Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

    2002-01-01T23:59:59.000Z

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  18. Trending: Metal Oxo Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing...

  19. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, Rex (Livermore, CA); Pocha, Michael D. (Livermore, CA)

    1994-01-01T23:59:59.000Z

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  20. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, R.; Pocha, M.D.

    1994-08-23T23:59:59.000Z

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  1. Nanoparticles as Reactive Precursors: Synthesis of Alloys, Intermetallic Compounds, and Multi-Metal Oxides Through Low-Temperature Annealing and Conversion Chemistry 

    E-Print Network [OSTI]

    Bauer, John C.

    2010-07-14T23:59:59.000Z

    Alloys, intermetallic compounds and multi-metal oxides are generally made by traditional solid-state methods that often require melting or grinding/pressing powders followed by high temperature annealing (> 1000 degrees ...

  2. Geochemical, metagenomic and metaproteomic insights into trace metal utilization by methane-oxidizing microbial consortia in sulfidic marine sediments

    SciTech Connect (OSTI)

    Glass, DR. Jennifer [California Institute of Technology, Pasadena; Yu, DR. Hang [California Institute of Technology, Pasadena; Steele, Joshua [California Institute of Technology, Pasadena; Dawson, Katherine [California Institute of Technology, Pasadena; Sun, S [University of California, San Diego; Chourey, Karuna [ORNL; Hettich, Robert {Bob} L [ORNL; Orphan, V [California Institute of Technology, Pasadena

    2014-01-01T23:59:59.000Z

    Microbes have obligate requirements for trace metals in metalloenzymes that catalyze important biogeochemical reactions. In anoxic methane- and sulfide-rich environments, microbes may have unique adaptations for metal acquisition and utilization due to decreased bioavailability as a result of metal sulfide precipitation. However, micronutrient cycling is largely unexplored in cold ( 10 C) and sulfidic (>1 mM H2S) deep-sea methane seep ecosystems. We investigated trace metal geochemistry and microbial metal utilization in methane seeps offshore Oregon and California, USA, and report dissolved concentrations of nickel (0.5-270 nM), cobalt (0.5-6 nM), molybdenum (10-5,600 nM) and tungsten (0.3-8 nM) in Hydrate Ridge sediment porewaters. Despite low levels of cobalt and tungsten, metagenomic and metaproteomic data suggest that microbial consortia catalyzing anaerobic oxidation of methane utilize both scarce micronutrients in addition to nickel and molybdenum. Genetic machinery for cobalt-containing vitamin B12 biosynthesis was present in both anaerobic methanotrophic archaea (ANME) and sulfate-reducing bacteria (SRB). Proteins affiliated with the tungsten-containing form of formylmethanofuran dehydrogenase were expressed in ANME from two seep ecosystems, the first evidence for expression of a tungstoenzyme in psychrotolerant microorganisms. Finally, our data suggest that chemical speciation of metals in highly sulfidic porewaters may exert a stronger influence on microbial bioavailability than total concentration

  3. New sol-gel synthetic route to transition and main-group metal oxide aerogels using inorganic salt precursors

    SciTech Connect (OSTI)

    Gash, A E; Tillotson, T M; Satcher Jr, J H; Hrubesh, L W; Simpson, R L

    2000-09-12T23:59:59.000Z

    We have developed a new sol-gel route to synthesize several transition and main-group metal oxide aerogels. The approach is straightforward, inexpensive, versatile, and it produces monolithic microporous materials with high surface areas. Specifically, we report the use of epoxides as gelation agents for the sol-gel synthesis of chromia aerogels and xerogels from simple Cr(III) inorganic salts. The dependence of both gel formation and its rate was studied by varying the solvent used, the Cr(III) precursor salt, the epoxide/Cr(III) ratio, as well as the type of epoxide employed. All of these variables were shown to affect the rate of gel formation and provide a convenient control of this parameter. Dried chromia aerogels were characterized by high-resolution transmission electron microscopy (HRTEM) and nitrogen adsorption/desorption analyses, results of which will be presented. Our studies have shown that rigid monolithic gels can be prepared from many different metal ions salts, provided the formal oxidation state of the metal ion is greater than or equal to +3. Conversely, when di-valent transition metal salts are used precipitated solids are the products.

  4. Synthesis of Functionalized Superparamagnetic Iron Oxide Nanoparticles from a Common Precursor and their Application as Heavy Metal and Actinide Sorbents

    SciTech Connect (OSTI)

    Warner, Marvin G.; Warner, Cynthia L.; Addleman, Raymond S.; Droubay, Timothy C.; Engelhard, Mark H.; Davidson, Joseph D.; Cinson, Anthony D.; Nash, Michael A.; Yantasee, Wassana

    2009-10-12T23:59:59.000Z

    We describe the use of a simple and versatile technique to generate a series of ligand stabilized iron oxide nanoparticles containing different ? functionalities with specificities toward heavy metals and actinides at the periphery of the stabilizing ligand shell from a common, easy to synthesize precursor nanoparticle. The resulting nanoparticles are designed to contain affinity ligands that make them excellent sorbent materials for a variety of heavy metals from contaminated aqueous systems such as river water and ground water as well as actinides from clinical samples such as blood and urine. Functionalized superparamagnetic nanoparticles make ideal reagents for extraction of heavy metal and actinide contaminants from environmental and clinical samples since they are easily removed from the media once bound to the contaminant by simply applying a magnetic field. In addition, these engineered nanomaterials have an inherently high active surface area (often > 100 m2/g) making them ideal sorbent materials for these types of applications

  5. High Activity of Ce1-xNixO2-y for H2 Production through Ethanol Steam Reforming: Tuning Catalytic Performance through Metal-Oxide Interactions

    SciTech Connect (OSTI)

    G Zhou; L Barrio; S Agnoli; S Senanayake; J Evans; A Kubacka; M Estrella; J Hanson; A Martinez-Arias; et al.

    2011-12-31T23:59:59.000Z

    The importance of the oxide: Ce{sub 0.8}Ni{sub 0.2}O{sub 2-y} is an excellent catalyst for ethanol steam reforming. Metal-oxide interactions perturb the electronic properties of the small particles of metallic nickel present in the catalyst under the reaction conditions and thus suppress any methanation activity. The nickel embedded in ceria induces the formation of O vacancies, which facilitate cleavage of the OH bonds in ethanol and water.

  6. Finding Room for Improvement in Transition Metal Oxides Cathodes for Lithium-ion Batteries

    E-Print Network [OSTI]

    Kam, Kinson

    2012-01-01T23:59:59.000Z

    Oxides Cathodes for Lithium-ion Batteries Kinson C. Kam andusing rechargeable lithium-ion batteries has become an

  7. First principles analysis of the initial oxidation of Si(001) and Si(111) surfaces terminated with H and CH3

    E-Print Network [OSTI]

    Wu, Zhigang

    ) Positive or negative gain: Role of thermal capture cross sections in impurity photovoltaic effect J. Appl in photovoltaics and micro-electronics research for over half a century. For example, precise control in metal-oxide semiconductor field effect transistors.1 In solar cells composed of crystalline Si, post

  8. In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques

    E-Print Network [OSTI]

    George, Steven M.

    -type semiconductor metal oxide that has many applications in various fields due to its special optical, electrical capacity anode for next gen- eration lithium ion batteries.3,4 SnO2 can also be used as a catalyst typically around 10-2 cm. The adsorp- tion of O2 from air removes the electron charge carriers from

  9. Removal of metal oxide defects through improved semi-anisotropic wet etching process

    E-Print Network [OSTI]

    Dave, Neha H. (Neha Hemang)

    2012-01-01T23:59:59.000Z

    Data recently collected from an industrial thin film manufacturer indicate that almost 8% of devices are rejected due to excess metal, or unwanted metal on the device surface. Experimentation and analysis suggest that ...

  10. Detecting Hazardous Gas Analytes Using Porous Silicon Sensors Coated with Metal Oxide Nanoparticles Eddie Goude, University of Florida Georgia Tech SURF 2011

    E-Print Network [OSTI]

    Li, Mo

    Detecting Hazardous Gas Analytes Using Porous Silicon Sensors Coated with Metal Oxide Nanoparticles oxide coatings and the Hard-Soft Acid-Base concept. This sensor is proposed to be a new, nanotechnology for this experiment, p-type and n-type. The wafers were first coated with silicon carbide and then etched with a mask

  11. Oxidation of Methanol on 2nd and 3rd Row Group VIII Transition Metals (Pt, Ir, Os, Pd, Rh, and Ru): Application to Direct Methanol

    E-Print Network [OSTI]

    Goddard III, William A.

    Oxidation of Methanol on 2nd and 3rd Row Group VIII Transition Metals (Pt, Ir, Os, Pd, Rh, and Ru): Application to Direct Methanol Fuel Cells Jeremy Kua and William A. Goddard III* Contribution from functional theory (B3LYP)], we calculated the 13 most likely intermediate species for methanol oxidation

  12. E-Print Network 3.0 - alkali metal oxides Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    , sodium carbide, turpentine, finely divided metals Calcium water, carbon dioxide, carbon tetrachloride... , and chlorinated hydrocarbons Carbon, activated calcium...

  13. Support shape effect in metal oxide catalysis: ceria nanoshapes supported vanadia catalysts for oxidative dehydrogenation of iso-butane

    SciTech Connect (OSTI)

    Wu, Zili [ORNL; Schwartz, Viviane [ORNL; Li, Meijun [ORNL; Rondinone, Adam Justin [ORNL; Overbury, Steven {Steve} H [ORNL

    2012-01-01T23:59:59.000Z

    The activation energy of VOx/CeO2 catalysts in oxidative dehydrogenation of iso-butane was found dependent on the shape of ceria support: rods < octahedra, closely related to the surface oxygen vacancy formation energy and defects amount of the two ceria supports with different crystallographic surface planes.

  14. Hydrolysis of Naptalam and Structurally Related Amides: Inhibition by Dissolved Metal Ions and Metal (Hydr)Oxide Surfaces

    E-Print Network [OSTI]

    Huang, Ching-Hua

    . INTRODUCTION Several important classes of agrochemicals possess amide and anilide functional groups. Naptalam). Agrochemicals often possess functional groups in the vicinity of amide and anilide linkages; participation and anilide agrochemicals. Granados et al. (1995) reported no significant effects of dissolved divalent metal

  15. Oxidation energies of transition metal oxides within the GGA+U framework Lei Wang, Thomas Maxisch, and Gerbrand Ceder*

    E-Print Network [OSTI]

    Ceder, Gerbrand

    is computed using the generalized gradient approach GGA and GGA+U methods. Two substantial contributions, combustion, metal refining, electrochemical energy generation and storage, photosynthesis, and metabolism and generalized gradient approxima- tion GGA , two standard approximations to density func- tional theory DFT

  16. Compositional Control of Surface Oxides on Metal Alloys using Photons: Dynamic Simulations and Experiments

    SciTech Connect (OSTI)

    Chang, C.; Sankaranarayanan, S; Ruzmetov, D; Engelhard, M; Kaxiras, E; Ramanathan, S

    2010-01-01T23:59:59.000Z

    We report on the ability to modify the structure and composition of ultrathin oxides grown on Ni and Ni-Al alloy surfaces at room temperature utilizing photon illumination. We find that the nickel-oxide formation is enhanced in the case of oxidation under photo-excitation. The enhanced oxidation kinetics of nickel in 5% Ni-Al alloy is corroborated by experimental and simulation studies of natural and photon-assisted oxide growth on pure Ni(100) surfaces. In case of pure Ni substrates, combined x-ray photoelectron spectroscopy analysis, and atomic force microscope current mapping support the deterministic role of the structure of nickel passive-oxide films on their nanoscale corrosion resistance. Atomistic simulations involving dynamic charge transfer predict that the applied electric field overcomes the activation-energy barrier for ionic migration, leading to enhanced oxygen incorporation into the oxide, enabling us to tune the mixed-oxide composition at atomic length scales. Atomic scale control of ultrathin oxide structure and morphology in the case of pure substrates as well as compositional tuning of complex oxide in the case of alloys leads to excellent passivity as verified from potentiodynamic polarization experiments.

  17. Novel lanthanide-labeled metal oxide nanoparticles improve the measurement of in vivo clearance and translocation

    E-Print Network [OSTI]

    Abid, Aamir D; Anderson, Donald S; Das, Gautom K; Van Winkle, Laura S; Kennedy, Ian M

    2013-01-01T23:59:59.000Z

    and translocation of europium-doped gadolinium oxideemission from the lanthanide Europium ion, and has a similarcorrespond to monoclinic europium oxide (PDF 00-034-0072). [

  18. X-ray absorption spectroscopy study of the local structure of heavy metal ions incorporated into electrodeposited nickel oxide films

    SciTech Connect (OSTI)

    Balasubramanian, M.; Melendres, C.A. [Argonne National Lab., IL (United States). Chemical Technology Div.] [Argonne National Lab., IL (United States). Chemical Technology Div.; Mansour, A.N. [Naval Surface Warfare Center, Bethesda, MD (United States). Carderock Div.] [Naval Surface Warfare Center, Bethesda, MD (United States). Carderock Div.

    1999-02-01T23:59:59.000Z

    The incorporation of heavy metal ions into simulated corrosion films has been investigated using spectroscopic and electrochemical techniques. The films were formed by electrodeposition of the appropriate oxide (hydroxide) onto a graphite substrate. Synchrotron X-ray absorption spectroscopy (XAS) was used to determine the structure and composition of the host oxide film, as well as the local structure of the impurity ion. Results on the incorporation of Ce and Sr into surface films of Ni(OH){sub 2} and NiOOH are reported. Cathodically deposited Ni(OH){sub 2} was found to be mainly in the alpha form while anodically prepared NiOOH showed the presence of Ni{sup +2} and Ni{sup +4}. Cerium incorporated into Ni(OH){sub 2} exists as mixed Ce{sup +3} and Ce{sup +4} phases; a Ce{sup +4} species was found when Ce was codeposited with NiOOH. The structure of the Ce{sup +4} phase in anodic films appears similar to a Ce(OH){sub 4} standard. However, XAS, X-ray diffraction, and laser Raman measurements indicate that the latter chemical formulation is probably incorrect and that the material is really a disordered form of hydrous cerium oxide. The local structure of this material is similar to CeO{sub 2} but has much higher structural disorder. The significance of this finding on the question of the structure of Ce-based corrosion inhibitors in aluminum oxide films is pointed out. Moreover, the authors found it possible to form pure Ce oxide (hydroxide) films on graphite by both cathodic and anodic electrodeposition; their structures have also been elucidated. Strontium incorporated into nickel oxide films consists of Sr{sup +2} which is coordinated to oxygen atoms and is likely to exist as small domains of coprecipitated material.

  19. alkaline-earth metal oxides: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Berkeley. FOM Institute for Plasma Physics Cohen, Ronald C. 2 Liquid metal batteries : ambipolar electrolysis and alkaline earth electroalloying cells MIT - DSpace...

  20. A micromechanical model of oxidation effects in SiC/Ti metal matrix composites

    E-Print Network [OSTI]

    Wittig, Laurrie Ann

    1993-01-01T23:59:59.000Z

    representative volume element (RVE) for a single ply continuous fiber SiC/Ti-15V-3A]-3Sn-3Cr (Ti-15-3) composite system. Thermoelastic material models are assumed for the matrix, oxide layer, and fiber. The analysis shows that the oxide layer, when formed...

  1. Catalytic hydrocarbon reactions over supported metal oxides. Final report, August 1, 1986--July 31, 1995

    SciTech Connect (OSTI)

    Ekerdt, J.G.

    1995-10-20T23:59:59.000Z

    Oxide catalysis plays a central role in hydrocarbon processing and improvements in catalytic activity or selectivity are of great technological importance because these improvements will translate directly into more efficient utilization of hydrocarbon supplies and lower energy consumption in separation processes. An understanding of the relationships between surface structure and catalytic properties is needed to describe and improve oxide catalysts. The approach has been to prepare supported oxides that have a specific structure and oxidation state and then employ these structures in reaction studies. The current research program is focused on studying the fundamental relationships between structure and reactivity for two important reactions that are present in many oxide-catalyzed processes, partial oxidation and carbon-carbon bond formation. During the course of these studies the author has: (1) developed methods to form and stabilize various Mo and W oxide structures on silica; (2) studied C-H abstraction reactions over the fully oxidized cations; (3) studied C-C bond coupling by metathesis and reductive coupling of aldehydes and ketones over reduced cation structures; and (4) initiated a study of hydrogenation and hydrogenolysis over reduced cation structures.

  2. Life-cycle Assessment of Semiconductors

    E-Print Network [OSTI]

    Boyd, Sarah B.

    2009-01-01T23:59:59.000Z

    SemiconductorThe Semiconductor Industry: Size, Growth andSemiconductor Life-cycle Environmental Impacts . . . . . . .

  3. Method for forming metal contacts

    DOE Patents [OSTI]

    Reddington, Erik; Sutter, Thomas C; Bu, Lujia; Cannon, Alexandra; Habas, Susan E; Curtis, Calvin J; Miedaner, Alexander; Ginley, David S; Van Hest, Marinus Franciscus Antonius Maria

    2013-09-17T23:59:59.000Z

    Methods of forming metal contacts with metal inks in the manufacture of photovoltaic devices are disclosed. The metal inks are selectively deposited on semiconductor coatings by inkjet and aerosol apparatus. The composite is heated to selective temperatures where the metal inks burn through the coating to form an electrical contact with the semiconductor. Metal layers are then deposited on the electrical contacts by light induced or light assisted plating.

  4. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, James W. (Aiken, SC)

    1998-01-01T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

  5. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

    1996-01-01T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

  6. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1996-08-20T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

  7. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1998-06-30T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

  8. Mechanism of oxygen reduction reaction on transition metal oxide catalysts for high temperature fuel cells

    E-Print Network [OSTI]

    La O', Gerardo Jose Cordova

    2008-01-01T23:59:59.000Z

    The solid oxide fuel cell (SOFC) with its high energy conversion efficiency, low emissions, silent operation and its ability to utilize commercial fuels has the potential to create a large impact on the energy landscape. ...

  9. Beyond the Lone-Pair Model for Structurally Distorted Metal Oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    possibilities inherent in Nature's imperfections. Top: In the low-temperature phase of lead oxide (-PbO), each lead atom (blue) forms a tetragon with four oxygen nearest...

  10. The detection of nitric oxide and its reactivity with transition metal thiolate complexes

    E-Print Network [OSTI]

    Tennyson, Andrew Gregory

    2008-01-01T23:59:59.000Z

    Nitric oxide (NO) is a molecule that is essential for life and regulates both beneficial and harmful processes. Because this gaseous radical influences many aspects of health and disease, we wish to explore the relationship ...

  11. Interplay between electronic structure and catalytic activity in transition metal oxide model system

    E-Print Network [OSTI]

    Suntivich, Jin

    2012-01-01T23:59:59.000Z

    The efficiency of many energy storage and conversion technologies, such as hydrogen fuel cells, rechargeable metal-air batteries, and hydrogen production from water splitting, is limited by the slow kinetics of the oxygen ...

  12. Engineering Escherichia coli for molecularly defined electron transfer to metal oxides and electrodes

    E-Print Network [OSTI]

    Jensen, Heather Marie

    2013-01-01T23:59:59.000Z

    A mediator-less microbial fuel cell using a metal reducingExperiments on a Microbial Fuel Cell. Science 1962, 137,from a miniature microbial fuel cell using Shewanella

  13. 6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002

    E-Print Network [OSTI]

    Del Alamo, Jesus

    The physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS ...

  14. Photo-oxidation catalysts

    DOE Patents [OSTI]

    Pitts, J. Roland (Lakewood, CO); Liu, Ping (Irvine, CA); Smith, R. Davis (Golden, CO)

    2009-07-14T23:59:59.000Z

    Photo-oxidation catalysts and methods for cleaning a metal-based catalyst are disclosed. An exemplary catalyst system implementing a photo-oxidation catalyst may comprise a metal-based catalyst, and a photo-oxidation catalyst for cleaning the metal-based catalyst in the presence of light. The exposure to light enables the photo-oxidation catalyst to substantially oxidize absorbed contaminants and reduce accumulation of the contaminants on the metal-based catalyst. Applications are also disclosed.

  15. Characterization of a Fe/Y{sub 2}O{sub 3} metal/oxide interface using neutron and x-ray scattering

    SciTech Connect (OSTI)

    Watkins, E. B.; Majewski, J., E-mail: demkowicz@mit.edu, E-mail: jarek@lanl.gov [Lujan Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Kashinath, A. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Computational Modeling Technology, Aramco Research Center—Boston, Cambridge, Massachusetts 02139 (United States); Wang, P. [Lujan Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Intel Corporation, Hillsboro, Oregon, 97006 (United States); Baldwin, J. K. [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Demkowicz, M. J., E-mail: demkowicz@mit.edu, E-mail: jarek@lanl.gov [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-07-28T23:59:59.000Z

    The structure of metal/oxide interfaces is important to the radiation resistance of oxide dispersion-strengthened steels. We find evidence of gradual variations in stoichiometry and magnetization across a Fe/Y{sub 2}O{sub 3} metal/oxide heterophase interface using neutron and x-ray reflectometry. These findings suggest that the Fe/Y{sub 2}O{sub 3} interface is a transitional zone approximately ?64?Å-thick containing mixtures or compounds of Fe, Y, and O. Our results illustrate the complex chemical and magnetic nature of Fe/oxide interfaces and demonstrate the utility of combined neutron and x-ray techniques as tools for characterizing them.

  16. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon metal and alloys (excluding semiconductor-grade silicon)

    E-Print Network [OSTI]

    metal: Brazil, 37%; South Africa, 25%; Canada, 14%; Norway, 6%; and other, 18%. Total: Brazil, 20%; China, 16%; South Africa, 13%; Canada, 12%; and other, 39%. Tariff: Item Number Normal Trade Relations energy costs. Demand for silicon metal comes primarily from the aluminum and chemical industries

  17. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2013-03-26T23:59:59.000Z

    Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  18. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Scher, Erik C. (San Francisco, CA); Manna, Liberato (Lecce, IT)

    2010-12-14T23:59:59.000Z

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  19. Infrared spectroscopy of novel semiconductors /

    E-Print Network [OSTI]

    Chapler, Brian Caleb

    2014-01-01T23:59:59.000Z

    dilute magnetic semiconductor . . . . . . . . 1 1.1.1in the topological semiconductors Bi2Te3 and Mn—dopedM. Fundamentals of semiconductors. Springer-Verlag, Berlin,

  20. Novel room temperature ferromagnetic semiconductors

    E-Print Network [OSTI]

    Gupta, Amita

    2004-01-01T23:59:59.000Z

    Spin Related Phenomena in Semiconductors, (27-28 Jan 1997,FERROMAGNETIC SEMICONDUCTORS Amita Gupta Stockholm, Junedata are processed by semiconductor chips, and stored in the

  1. Synthesis and characterization of some metal oxide nanocrystals by microwave irradiation

    SciTech Connect (OSTI)

    Rashad, M.; Gaber, A.; Abdelrahim, M. A.; Abdel-Baset, A. M. [Physics Department, Faculty of Science, Assiut University, 71516 Assiut (Egypt); Moharram, A. H. [Physics Dept., College of Science and Arts, King Abdulaziz Univ., Rabigh 21911 (Saudi Arabia)

    2013-12-16T23:59:59.000Z

    Copper oxide and cobalt oxide (CuO, Co3O4) nanocrystals (NCs) have been successfully prepared in a short time using microwave irradiation. The resulted powders of nanocrystals (NCs) were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Thermogravimetric analysis (TGA) measurements are also studied. Fourier-transform infrared (FT-IR) and UV–visible absorption spectroscopy of both kind of nanoparticels are illustrated. Optical absorption analysis indicated the direct band gap for both kinds of nanocrystals.

  2. The design of new ligands and transition metal compounds for the oxidation of organic compounds

    E-Print Network [OSTI]

    Grill, Joseph Michael

    2009-06-02T23:59:59.000Z

    ........................................................................................... 108 APPENDIX B............................................................................................ 215 APPENDIX C............................................................................................ 225 VITA..., oxidation of manganese (III) to manganese (V) occurs, followed by addition of an olefin to form a C-O bond and a carbon radical. Collapse of the radical species t 12 then gives the epoxide (Scheme 1.8). 38 This mechanism allows for the possibility...

  3. Method of producing highly oxidized superconductors containing barium, copper, and a third metal

    DOE Patents [OSTI]

    Morris, Donald E. (Kensington, CA)

    1996-01-01T23:59:59.000Z

    Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known syntheses in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed.

  4. Method of producing highly oxidized superconductors containing barium, copper, and a third metal

    DOE Patents [OSTI]

    Morris, D.E.

    1996-02-20T23:59:59.000Z

    Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known syntheses in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed. 16 figs.

  5. Uniformly Embedded Metal Oxide Nanoparticles in Vertically Aligned Carbon Nanotube Forests as Pseudocapacitor Electrodes for

    E-Print Network [OSTI]

    Lin, Liwei

    applications. A vacuum-assisted, in situ electrodeposition process has been used to achieve the three-dimensional functionalization of CNT forests with inserted nickel nanoparticles as pseudocapacitor electrodes. Experimental CNT forest samples, and the oxidized nickel nanoparticle/CNT supercapacitor retained 94.2% of its

  6. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani

    2006-04-04T23:59:59.000Z

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  7. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani; Manivannan, Venkatesan

    2004-07-13T23:59:59.000Z

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  8. Use of impure inert gases in the controlled heating and cooling of mixed conducting metal oxide materials

    DOE Patents [OSTI]

    Carolan, Michael Francis (Allentown, PA); Bernhart, John Charles (Fleetwood, PA)

    2012-08-21T23:59:59.000Z

    Method for processing an article comprising mixed conducting metal oxide material. The method comprises contacting the article with an oxygen-containing gas and either reducing the temperature of the oxygen-containing gas during a cooling period or increasing the temperature of the oxygen-containing gas during a heating period; during the cooling period, reducing the oxygen activity in the oxygen-containing gas during at least a portion of the cooling period and increasing the rate at which the temperature of the oxygen-containing gas is reduced during at least a portion of the cooling period; and during the heating period, increasing the oxygen activity in the oxygen-containing gas during at least a portion of the heating period and decreasing the rate at which the temperature of the oxygen-containing gas is increased during at least a portion of the heating period.

  9. Noble Metal-Free Reduced Graphene Oxide-ZnxCd1-xS Nanocomposite with Enhanced Solar Photocatalytic H2Production

    E-Print Network [OSTI]

    Gong, Jian Ru

    Noble Metal-Free Reduced Graphene Oxide-ZnxCd1-xS Nanocomposite with Enhanced Solar Photocatalytic and Environmental Engineering, Wuhan University of Technology, Wuhan 430070, People's Republic of China National of China § Department of Chemistry, Kent State University, Kent, Ohio 44242, United States *S Supporting

  10. Molybdenum-based additives to mixed-metal oxides for use in hot gas cleanup sorbents for the catalytic decomposition of ammonia in coal gases

    DOE Patents [OSTI]

    Ayala, Raul E. (Clifton Park, NY)

    1993-01-01T23:59:59.000Z

    This invention relates to additives to mixed-metal oxides that act simultaneously as sorbents and catalysts in cleanup systems for hot coal gases. Such additives of this type, generally, act as a sorbent to remove sulfur from the coal gases while substantially simultaneously, catalytically decomposing appreciable amounts of ammonia from the coal gases.

  11. Methane Activation by Transition-Metal Oxides, MOx (M ) Cr, Mo, W; x ) 1, 2, 3) Xin Xu,# Francesco Faglioni, and William A. Goddard, III*

    E-Print Network [OSTI]

    Goddard III, William A.

    The efficient catalytic conversion of methane to petrochemical feedstocks and liquid fuels is a great technicalMethane Activation by Transition-Metal Oxides, MOx (M ) Cr, Mo, W; x ) 1, 2, 3) Xin Xu,# Francesco, 2002 Recent experiments on the dehydrogenation-aromatization of methane (DHAM) to form benzene using

  12. A micromechanical model of oxidation effects in SiC/Ti metal matrix composites 

    E-Print Network [OSTI]

    Wittig, Laurrie Ann

    1993-01-01T23:59:59.000Z

    , continuous, thermodynamically stable (with a slow growth rate), and adherent during thermal cycles. Before one does an analysis of oxidation, the material mechanisms should be well defined. Therefore, representative experiments must be performed... on the environmental temperature and pressure [29, 32]. Adding more complication, the Ti-0 phase diagram shows the resulting compounds have narrow homogeneity and can co-exist as phase mixtures over a wide range of oxygen content [32]. However, under operating...

  13. Design and construction of a radiation resistant quadrupole using metal oxide insulated CICC

    SciTech Connect (OSTI)

    Albert F. Zeller

    2012-12-28T23:59:59.000Z

    The construction of a engineering test model of a radiation resistant quadrupole is described. The cold-iron quadrupole uses coils fabricated from metal-oixide (synthetic spinel) insulated Cable-In-Conduit-Conductor (CICC). The superconductor is NbTi in a copper matrix. The quadrupole is designed to produce a pole-tip field of 2 T with an operating current of 7,000 A.

  14. INL Internship:Modification of Metal Contaminants on Oxide Surfaces Modified by Laser Irradiation

    SciTech Connect (OSTI)

    Michael J. Hansen; Robert Fox; Les Manner

    2006-08-01T23:59:59.000Z

    This project focuses on obtaining the optimal laser parameters needed for enhancing metal contaminants on cement, granite, and marble. The various parameters of the laser tested include the fluence, wavelength, and frequency. A chelating study was also performed in order to increase the volatility of cobalt. In the following paper each experiment is described in detail. No results are included in this report because their release is not approved and they could eventually become classified.

  15. Method for improving the oxidation-resistance of metal substrates coated with thermal barrier coatings

    DOE Patents [OSTI]

    Thompson, Anthony Mark (Niskayuna, NY); Gray, Dennis Michael (Delanson, NY); Jackson, Melvin Robert (Niskayuna, NY)

    2002-01-01T23:59:59.000Z

    A method for providing a protective coating on a metal-based substrate is disclosed. The method involves the application of an aluminum-rich mixture to the substrate to form a discontinuous layer of aluminum-rich particles, followed by the application of a second coating over the discontinuous layer of aluminum-rich particles. Aluminum diffuses from the aluminum-rich layer into the substrate, and into any bond coat layer which is subsequently applied. Related articles are also described.

  16. Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere

    SciTech Connect (OSTI)

    Luna, H.; Franceschini, D. F.; Prioli, R.; Guimaraes, R. B.; Sanchez, C. M.; Canal, G. P.; Barbosa, M. D. L.; Galvao, R. M. O. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Cx. Postal 68528, Rio de Janeiro, RJ 21941-972 (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Rua Marques de Sao Vicente 225, 22453-970, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Departamento de Fisica Nuclear, Universidade de Sao Paulo, Caixa Postal 66328, 05315-970, Sao Paulo, SP (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil)

    2010-09-15T23:59:59.000Z

    Nanostrucured europium oxide and hydroxide films were obtained by pulsed Nd:YAG (532 nm) laser ablation of a europium metallic target, in the presence of a 1 mbar helium buffer atmosphere. Both the produced film and the ambient plasma were characterized. The plasma was monitored by an electrostatic probe, for plume expansion in vacuum or in the presence of the buffer atmosphere. The time evolution of the ion saturation current was obtained for several probe to substrate distances. The results show the splitting of the plume into two velocity groups, being the lower velocity profile associated with metal cluster formation within the plume. The films were obtained in the presence of helium atmosphere, for several target-to-substrate distances. They were analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and atomic force microscopy, for as-deposited and 600 deg. C treated-in-air samples. The results show that the as-deposited samples are amorphous and have chemical composition compatible with europium hydroxide. The thermally treated samples show x-ray diffraction peaks of Eu{sub 2}O{sub 3}, with chemical composition showing excess oxygen. Film nanostructuring was shown to be strongly correlated with cluster formation, as shown by velocity splitting in probe current versus time plots.

  17. Understanding Atom Probe Tomography of Oxide-Supported Metal Nanoparticles by Correlation with Atomic Resolution Electron Microscopy and Field Evaporation Simulation

    SciTech Connect (OSTI)

    Devaraj, Arun; Colby, Robert J.; Vurpillot, F.; Thevuthasan, Suntharampillai

    2014-03-26T23:59:59.000Z

    Metal-dielectric composite materials, specifically metal nanoparticles supported on or embedded in metal oxides, are widely used in catalysis. The accurate optimization of such nanostructures warrants the need for detailed three-dimensional characterization. Atom probe tomography is uniquely capable of generating sub-nanometer structural and compositional data with part-per-million mass sensitivity, but there are reconstruction artifacts for composites containing materials with strongly differing fields of evaporation, as for oxide-supported metal nanoparticles. By correlating atom probe tomography with scanning transmission electron microscopy for Au nanoparticles embedded in an MgO support, deviations from an ideal topography during evaporation are demonstrated directly, and correlated with compositional errors in the reconstructed data. Finite element simulations of the field evaporation process confirm that protruding Au nanoparticles will evolve on the tip surface, and that evaporation field variations lead to an inaccurate assessment of the local composition, effectively lowering the spatial resolution of the final reconstructed dataset. Cross-correlating the experimental data with simulations results in a more detailed understanding of local evaporation aberrations during APT analysis of metal-oxide composites, paving the way towards a more accurate three-dimensional characterization of this technologically important class of materials.

  18. Impurity gettering in semiconductors

    DOE Patents [OSTI]

    Sopori, B.L.

    1995-06-20T23:59:59.000Z

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  19. Impurity gettering in semiconductors

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    1995-01-01T23:59:59.000Z

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  20. MEMSNANO-2005 International conference on MEMS and Semiconductor Nanotechnology

    E-Print Network [OSTI]

    Mishra, Prabhat

    in place of polycrystalline metal oxide lead to large increase of free surface energy which in turn leads-22,2005,IIT Kharagpur,India MEMS BASED NANOCRYSTALLINE METAL OXIDE GAS SENSORS FOR COALMINE ENVIRONMENT P Metal Oxide gas sensors commonly used for sensing inflammable hydrocarbon gases and other toxic gases

  1. Abstract--The electrical properties of the PVD AlN have been investigated by means of metal-insulator-semiconductor

    E-Print Network [OSTI]

    Technische Universiteit Delft

    to reduce the self-heating in silicon-on-glass bipolar junction transistors [15]. These devicesAbstract--The electrical properties of the PVD AlN have been investigated by means of metal silicon. In this paper the electrical properties of the PVD AlN when deposited on silicon have been

  2. Preparation of III-V semiconductor nanocrystals

    DOE Patents [OSTI]

    Alivisatos, A.P.; Olshavsky, M.A.

    1996-04-09T23:59:59.000Z

    Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

  3. Preparation of III-V semiconductor nanocrystals

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Berkeley, CA); Olshavsky, Michael A. (Brunswick, OH)

    1996-01-01T23:59:59.000Z

    Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

  4. Helicon wave excitation to produce energetic electrons for manufacturing semiconductors

    DOE Patents [OSTI]

    Molvik, Arthur W. (Livermore, CA); Ellingboe, Albert R. (Fremont, CA)

    1998-01-01T23:59:59.000Z

    A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18-0.35 mm or less.

  5. Helicon wave excitation to produce energetic electrons for manufacturing semiconductors

    DOE Patents [OSTI]

    Molvik, A.W.; Ellingboe, A.R.

    1998-10-20T23:59:59.000Z

    A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18--0.35 mm or less. 16 figs.

  6. Development of carbon-metal oxide supercapacitors from sol-gel derived carbon-ruthenium xerogels

    SciTech Connect (OSTI)

    Lin, C.; Ritter, J.A.; Popov, B.N.

    1999-09-01T23:59:59.000Z

    There has been increasing interest in electrochemical capacitors as energy storage systems because of their high power density and long cycle life, compared to battery devices. According to the mechanism of energy storage, there are two types of electrochemical capacitors. One type is based on double layer (dl) formation due to charge separation, and the other type is based on a faradaic process due to redox reactions. Sol-gel derived high surface area carbon-ruthenium xerogels were prepared from carbonized resorcinol-formaldehyde resins containing an electrochemically active form of ruthenium oxide. The electrochemical capacitance of these materials increased with an increase in the ruthenium content indicating the presence of pseudocapacitance associated with the ruthenium oxide undergoing reversible faradaic redox reactions. A specific capacitance of 256 F/g (single electrode) was obtained from a carbon xerogel containing 14 wt% Ru, which corresponded to more than 50% utilization of the ruthenium. The double layer accounted for 40% of this capacitance. This material was also electrochemically stable, showing no change in a cyclic voltammogram for over 2,000 cycles.

  7. Method For Improving The Oxidation Resistance Of Metal Substrates Coated With Thermal Barrier Coatings

    DOE Patents [OSTI]

    Thompson, Anthony Mark (Niskayuna, NY); Gray, Dennis Michael (Delanson, NY); Jackson, Melvin Robert (Niskayuna, NY)

    2003-05-13T23:59:59.000Z

    A method for providing a protective coating on a metal-based substrate is disclosed. The method involves the application of an aluminum-rich mixture to the substrate to form a discontinuous layer of aluminum-rich particles, followed by the application of a second coating over the discontinuous layer of aluminum-rich particles. Aluminum diffuses from the aluminum-rich layer into the substrate, and into any bond coat layer which is subsequently applied. Related articles are also described. A method for providing a protective coating on a metal-based substrate is disclosed. The method involves the application of an aluminum-rich mixture to the substrate to form a discontinuous layer of aluminum-rich particles, followed by the application of a second coating over the discontinuous layer of aluminum-rich particles. Aluminum diffuses from the aluminum-rich layer into the substrate, and into any bond coat layer which is subsequently applied. Related articles are also described.

  8. Unitary lens semiconductor device

    DOE Patents [OSTI]

    Lear, Kevin L. (Albuquerque, NM)

    1997-01-01T23:59:59.000Z

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  9. Mismatched semiconductor nanowires: growth and characterization

    E-Print Network [OSTI]

    Yim, Joanne Wing Lan

    2011-01-01T23:59:59.000Z

    SemiconductorFundamentals of Semiconductors: Physics and MaterialsDilute III-V Nitride Semiconductors and Material Systems (

  10. High Performance Ceramic Interconnect Material for Solid Oxide Fuel Cells (SOFCs): Ca- and Transition Metal-doped Yttrium Chromite

    SciTech Connect (OSTI)

    Yoon, Kyung J.; Stevenson, Jeffry W.; Marina, Olga A.

    2011-10-15T23:59:59.000Z

    The effect of transition metal substitution on thermal and electrical properties of Ca-doped yttrium chromite was investigated in relation to use as a ceramic interconnect in high temperature solid oxide fuel cells (SOFCs). 10 at% Co, 4 at% Ni, and 1 at% Cu substitution on B-site of 20 at% Ca-doped yttrium chromite led to a close match of thermal expansion coefficient (TEC) with that of 8 mol% yttria-stabilized zirconia (YSZ), and a single phase Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 remained stable between 25 and 1100 degree C over a wide oxygen partial pressure range. Doping with Cu significantly facilitated densification of yttrium chromite. Ni dopant improved both electrical conductivity and dimensional stability in reducing environments, likely through diminishing the oxygen vacancy formation. Substitution with Co substantially enhanced electrical conductivity in oxidizing atmosphere, which was attributed to an increase in charge carrier density and hopping mobility. Electrical conductivity of Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 at 900 degree C is 57 S/cm in air and 11 S/cm in fuel (pO2=5×10^-17 atm) environments. Chemical compatibility of doped yttrium chromite with other cell components was verified at the processing temperatures. Based on the chemical and dimensional stability, sinterability, and thermal and electrical properties, Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 is suggested as a promising SOFC ceramic interconnect to potentially overcome technical limitations of conventional acceptor-doped lanthanum chromites.

  11. Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

    SciTech Connect (OSTI)

    Lagger, P., E-mail: peter.lagger@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria); Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Wien (Austria); Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Ostermaier, C. [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria); Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J. [Fraunhofer IPMS-CNT, Königsbrücker Straße 178, 01099 Dresden (Germany); Pogany, D. [Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Wien (Austria)

    2014-07-21T23:59:59.000Z

    The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ?V{sub th}, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness t{sub D} and barrier thickness t{sub B}, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ?N{sub it}, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ?N{sub it} is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

  12. Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment

    SciTech Connect (OSTI)

    Steven Brandt, E.; Grace, Jeremy M. [Eastman Kodak Company, 1999 Lake Avenue, Rochester, New York 14650-2022 (United States)

    2012-01-15T23:59:59.000Z

    The role of surface hydroxyl content in atomic layer deposition (ALD) of aluminum oxide (AO) on polymers is demonstrated by performing an atomic layer deposition of AO onto a variety of polymer types, before and after pretreatment in a plasma struck in water vapor. The treatment and deposition reactions are performed in situ in a high vacuum chamber that is interfaced to an x-ray photoelectron spectrometer to prevent adventitious exposure to atmospheric contaminants. X-ray photoelectron spectroscopy is used to follow the surface chemistries of the polymers, including theformation of surface hydroxyls and subsequent growth of AO by ALD. Using dimethyl aluminum isopropoxide and water as reactants, ALD is obtained for water-plasma-treated poly(styrene) (PS), poly(propylene) (PP), poly(vinyl alcohol) (PVA), and poly(ethylene naphthalate) (PEN). For PS, PP, and PEN, initial growth rates of AO on the native (untreated) polymers are at least an order of magnitude lower than on the same polymer surface following the plasma treatment. By contrast, native PVA is shown to initiate ALD of AO as a result of the presence of intrinsic surface hydroxyls that are derived from the repeat unit of this polymer.

  13. STUDY MAGNETIC EXCITATIONS IN DOPED TRANSITION METAL OXIDES USING INELASTIC NEUTRON SCATTERING

    SciTech Connect (OSTI)

    Dai, Pengcheng

    2014-02-18T23:59:59.000Z

    Understanding the interplay between magnetism and superconductivity continues to be a “hot” topic in modern condensed matter physics. The discovery of high-temperature superconductivity in iron-based materials in 2008 provided an unique opportunity to compare and contrast these materials with traditional high-Tc copper oxide superconductors. Neutron scattering plays an important role in determining the dynamical spin properties in these materials. This proposal is a continuation of previous DOE supported proposal. This report summarizes the final progress we have made over from May 2005 till Aug. 2013. Overall, we continue to carry out extensive neutron scattering experiments on Fe-based materials, focusing on understanding their magnetic properties. In addition, we have established a materials laboratory at UT that has allowed us to grow these superconductors. Because neutron scattering typically demands a large amount of samples, by growing these materials in our own laboratory, we can now pursuit neutron scattering experiments over the entire electronic phase diagram, focusing on regions of interests. The material synthesis laboratory at UT was established entirely with the support of DOE funding. This not only allowed us to carry out neutron scattering experiments, but also permit us to provide samples to other US/International collaborators for studying these materials.

  14. Characterization of illuminated semiconductor/solid-electrolyte junctions. photoelectrochemical investigation of a poly(ethylene oxide) cell. Interim technical report 1 Mar-30 Apr 83

    SciTech Connect (OSTI)

    Sammells, A.F.; Ang, P.G.P.

    1983-05-01T23:59:59.000Z

    Photoelectrochemical effects have been observed with solid-state cells using a poly(ethylene oxide) .NaSCN solid polymer electrolyte containing a Na2S/S redox couple. Photoeffects were observed at the interface of this electrolyte with p-InP, n-GaAs, and in a two-photoelectrode cell of configuration p-InP/PEO-NaSCN, Na2S,S/n-CdS. In this latter cell, photopotentials of 540 mV were generated using 100 mW/cm2 quartz iodine illumination.

  15. Comparative study of the reactions of metal oxides with H sub 2 S and SO sub 2

    SciTech Connect (OSTI)

    Sotirchos, S.V.

    1991-10-01T23:59:59.000Z

    The primary objective of this project is the investigation of the effects of pore structure on the capacity of porous metal oxides for removal of gaseous pollutants from flue gases of power plants (SO{sub 2}) and hot coal gas (primarily H{sub 2}A). Specifically, we intend to appropriately exploit the differences of the sulfidation and sulfation reactions (for instance, different molar volumes of solid products) to elucidate the dependence of the sorptive capacity of a porous sorbent on its physical microstructure. The following tasks have been identified in the proposed project: (1) Literature survey and identification of solids to be used in experimental studies. (2) Experimental study of the reaction of the chosen solids with SO{sub 2} and/or H{sub 2}S. (3) Experimental study of the evolution of the structure of the solids during reaction with SO{sub 2} and/or H{sub 2}S using pore structure analysis and effective diffusivity measurements. (4) Model testing and validation using the obtained experimental data.

  16. Impact of Fission Products Impurity on the Plutonium Content of Metal- and Oxide- Fuels in Sodium Cooled Fast Reactors

    SciTech Connect (OSTI)

    Hikaru Hiruta; Gilles Youinou

    2013-09-01T23:59:59.000Z

    This short report presents the neutronic analysis to evaluate the impact of fission product impurity on the Pu content of Sodium-cooled Fast Reactor (SFR) metal- and oxide- fuel fabrication. The similar work has been previously done for PWR MOX fuel [1]. The analysis will be performed based on the assumption that the separation of the fission products (FP) during the reprocessing of UOX spent nuclear fuel assemblies is not perfect and that, consequently, a certain amount of FP goes into the Pu stream used to fabricate SFR fuels. Only non-gaseous FPs have been considered (see the list of 176 isotopes considered in the calculations in Appendix 1 of Reference 1). Throughout of this report, we define the mixture of Pu and FPs as PuFP. The main objective of this analysis is to quantify the increase of the Pu content of SFR fuels necessary to maintain the same average burnup at discharge independently of the amount of FP in the Pu stream, i.e. independently of the PuFP composition. The FP losses are considered element-independent, i.e., for example, 1% of FP losses mean that 1% of all non-gaseous FP leak into the Pu stream.

  17. In-situ X-ray photoelectron spectroscopy studies of water on metals and oxides at ambient conditions

    SciTech Connect (OSTI)

    Salmeron, Miquel; Yamamoto, S.; Bluhm, H.; Andersson, K.; Ketteler, G.; Ogasawara, H.; Salmeron, M.; Nilsson, A.

    2007-10-29T23:59:59.000Z

    X-ray photoelectron spectroscopy (XPS) is a powerful tool for surface and interface analysis, providing the elemental composition of surfaces and the local chemical environment of adsorbed species. Conventional XPS experiments have been limited to ultrahigh vacuum (UHV) conditions due to a short mean free path of electrons in a gas phase. The recent advances in instrumentation coupled with third-generation synchrotron radiation sources enables in-situ XPS measurements at pressures above 5 Torr. In this review, we describe the basic design of the ambient pressure XPS setup that combines differential pumping with an electrostatic focusing. We present examples of the application of in-situ XPS to studies of water adsorption on the surface of metals and oxides including Cu(110), Cu(111), TiO2(110) under environmental conditions of water vapor pressure. On all these surfaces we observe a general trend where hydroxyl groups form first, followed by molecular water adsorption. The importance of surface OH groups and their hydrogen bonding to water molecules in water adsorption on surfaces is discussed in detail.

  18. Comparative study of the reactions of metal oxides with H{sub 2}S and SO{sub 2}

    SciTech Connect (OSTI)

    Sotirchos, S.V.

    1992-12-31T23:59:59.000Z

    Primary objective was to investigate the effects of pore structure on capacity of porous metal oxides for removal of SO{sub 2} from power plant fuel gas and H{sub 2}S from hot coal gas. During this period, a comparative study was carried out on the direct reaction with H{sub 2}S and SO{sub 2} of the three limestones used as CaO precursors: Greer limestone, Georgia marble, and Iceland spar calcite. Sulfation was carried out at 750 and 850 C in a thermogravimetric analysis system under simulated high pressure (enough CO{sub 2} to prevent decomposition of CaCO{sub 3}). Results are presented as conversion vs time graphs. Mercury penetration and gas adsorption were used to analyze the structure. Activation energies and effective diffusivities were determined. A variable diffusivity shrinking-core model was used to analyze the data. In the future, this limestone study will be completed, and a study on supported CuO sorbent will be started.

  19. Comparative study of the reactions of metal oxides with H[sub 2]S and SO[sub 2

    SciTech Connect (OSTI)

    Sotirchos, S.V.

    1992-01-01T23:59:59.000Z

    Primary objective was to investigate the effects of pore structure on capacity of porous metal oxides for removal of SO[sub 2] from power plant fuel gas and H[sub 2]S from hot coal gas. During this period, a comparative study was carried out on the direct reaction with H[sub 2]S and SO[sub 2] of the three limestones used as CaO precursors: Greer limestone, Georgia marble, and Iceland spar calcite. Sulfation was carried out at 750 and 850 C in a thermogravimetric analysis system under simulated high pressure (enough CO[sub 2] to prevent decomposition of CaCO[sub 3]). Results are presented as conversion vs time graphs. Mercury penetration and gas adsorption were used to analyze the structure. Activation energies and effective diffusivities were determined. A variable diffusivity shrinking-core model was used to analyze the data. In the future, this limestone study will be completed, and a study on supported CuO sorbent will be started.

  20. Solubility of, and hydrogen ion adsorption on, some metal oxides in aqueous solutions to high temperatures

    SciTech Connect (OSTI)

    Palmer, D.A.; Benezeth, P.; Wesolowski, D.J.; Anovitz, L.M. [Oak Ridge National Lab., TN (United States); Machesky, M.L. [Illinois State Water Survey, Champaign, IL (United States); Hayashi, Ken-ichiro [Tohoku Univ., Sendai (Japan). Inst. of Mineralogy, Petrology and Economic Geology; Hyde, K.E. [State Univ. of New York, Oswego, NY (United States). Dept. of Chemistry

    1997-08-01T23:59:59.000Z

    Solubility of boehmite (AlOOH), ferrous hydroxide (Fe(OH)2)/magnetite (Fe3O4), zincite (ZnO), and brucite (Mg(OH)2) were measured over a range of temperatures (AlOOH, 100-290 C; Fe(OH)2/Fe3O4, 100-250 C; ZnO, 50-290 C; Mg(OH)2, 60-200 C) using in situ pH measurements. A hydrogen-electrode concentration cell was used; the pH range depended on the oxide. The solubility results for boehmite mainly demonstrate the method viability, while those for zincite are mainly restricted to mildly acidic to neutral pH where Zn{sup 2+} predominates in solution. The magnetite (presumably coated with Fe(OH)2) solubilities extend from pHs > 5 and, because of relevance to water/steam cycles of power plants, are compared in detail with previous studies. The same cell was used to investigate the surface adsorption-desorption thermodynamics of H ions on rutile (TiO2) and zincite to 290 C. Behavior of pH at zero-point-of-charge as function of temperature and application of the Stern-3-layer model were determined for this solid. The zincite study is still incomplete; preliminary results show trends that can be rationalized only qualitatively now with the zero- point-of-charge being apparently affected by hydration of the surface in basic solutions and specific adsorption of Na ions under the same conditions.

  1. Mössbauer study of metallic iron and iron oxide nanoparticles having environmental purifying ability

    SciTech Connect (OSTI)

    Kubuki, Shiro, E-mail: kubuki@tmu.ac.jp; Watanabe, Yuka, E-mail: kubuki@tmu.ac.jp; Akiyama, Kazuhiko, E-mail: kubuki@tmu.ac.jp [Department of Chemistry, Graduate School of Science and Engineering, Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachi-Oji, Tokyo 192-0397 (Japan); Risti?, Mira; Krehula, Stjepko [Division of Materials Chemistry, Ru?er Boškovi? Institute, P. O. Box 180, Zagreb 10002 (Croatia); Homonnay, Zoltán; Kuzmann, Ern? [Institute of Chemistry, Eötvös Loránd University, P.O. Box 32, 1512 Budapest (Hungary); Nishida, Tetsuaki [Department of Biological and Environmental Chemistry, Faculty of Humanity-Oriented Science and Engineering, Kinki University, 11-6 Kayanomori, Iizuka, Fukuoka 820-8555 (Japan)

    2014-10-27T23:59:59.000Z

    A relationship between local structure and methylene blue (MB) decomposing ability of nanoparticles (NPs) of metallic iron (Fe{sup 0}) and maghemite (??Fe{sub 2}O{sub 3}) was investigated by {sup 57}Fe Mössbauer spectroscopy, X-ray diffractometry and UV-visible light absorption spectroscopy. ??Fe{sub 2}O{sub 3} NPs were successfully prepared by mixing (NH{sub 4}){sub 2}Fe(SO{sub 4}){sub 2}?6H{sub 2}O (Mohr's salt) and (NH{sub 4}){sub 3}Fe(C{sub 2}O{sub 4}){sub 3}?3H{sub 2}O aqueous solution at 30 °C for 1 h, while those of Fe{sup 0} were obtained by the reduction of Mohr's salt with NaBH{sub 4}. From the Scherrer's equation, the smallest crystallite sizes of ??Fe{sub 2}O{sub 3} NPs and Fe{sup 0} NPs were determined to be 9.7 and 1.5 nm, respectively. {sup 57}Fe Mössbauer spectrum of ??Fe{sub 2}O{sub 3} NPs consists of a relaxed sextet with isomer shift (?) of 0.33{sub ±0.01} mm s{sup ?1}, internal magnetic field (H{sub int}) of 25.8{sub ±0.5} T, and linewidth (?) of 0.62{sub ±0.04} mm s{sup ?1}. {sup 57}Fe Mössbauer spectrum of Fe{sup 0} NP is mainly composed of a sextet having ?, ?, and H{sub int} of 0.00{sub ±0.01} mm s{sup ?1} 0.45{sub ±0.01} mm s{sup ?1}, and 22.8{sub ±0.1} T, respectively. A bleaching test of the mixture of Fe{sup 0} and ??Fe{sub 2}O{sub 3} NPs (3:7 ratio, 100 mg) in MB aqueous solution (20 mL) for 6 h showed a remarkable decrease of MB concentration with the first-order rate constant (k{sub MB}) of 6.7 × 10{sup ?1} h{sup ?1}. This value is larger than that obtained for the bleaching test using bulk Fe{sup 0}+??Fe{sub 2}O{sub 3} (3:7) mixture (k{sub MB}?=?6.5×10{sup ?3}h{sup ?1}). These results prove that MB decomposing ability is enhanced by the NPs mixture of Fe{sub 0} and ??Fe{sub 2}O{sub 3}.

  2. Compositional Tuning of Ultrathin Surface Oxides on Metal and Alloy Substrates Using Photons: Dynamic Simulations and Experiments

    SciTech Connect (OSTI)

    Chang, Chia-Lin; Sankaranarayanan, Subramanian; Ruzmetov, Dmitry; Engelhard, Mark H.; Kaxiras, Efthimios; Ramanathan, Shriram

    2010-02-02T23:59:59.000Z

    Oxide synthesis with controlled functional properties is desirable for a plethora of applications but is elusive due to oxide growth kinetics. Here, we report on the ability to modify the structure and composition of ultra-thin oxides grown on Ni-Al alloy surfaces at room temperature utilizing photon illumination. Atomistic simulations that take into account dynamic charge transfer predict that the electric field produced across an oxide film in photon-assisted synthesis overcomes the activation energy barrier for ionic migration, leading to enhanced oxidation kinetics and oxygen incorporation into the oxide, enabling us to control the oxide composition at atomic length scales. Experiments (near-edge x-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy) indicate that the native oxide on 5%Ni-Al alloy is primarily composed of aluminum oxide with no nickel oxide whereas the photon-assisted oxide comprises of both aluminum oxide and nickel oxide. The ability to tune the composition at the atomic scale of the ultra-thin oxide films leads to excellent passivity as verified from polarization experiments.

  3. Interconnected semiconductor devices

    DOE Patents [OSTI]

    Grimmer, Derrick P. (White Bear Lake, MN); Paulson, Kenneth R. (North St. Paul, MN); Gilbert, James R. (St. Paul, MN)

    1990-10-23T23:59:59.000Z

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  4. Semiconductor bridge (SCB) detonator

    DOE Patents [OSTI]

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19T23:59:59.000Z

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  5. Semiconductor bridge (SCB) detonator

    DOE Patents [OSTI]

    Bickes, Jr., Robert W. (Albuquerque, NM); Grubelich, Mark C. (Albuquerque, NM)

    1999-01-01T23:59:59.000Z

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  6. Total-dose response of silicon-on-insulator (soi) metal-oxide- semiconductor field-effect transistor's (mosfet's). Master's thesis

    SciTech Connect (OSTI)

    Biwer, M.C.

    1988-06-01T23:59:59.000Z

    Total-dose response of both NMOS and PMOS FET's fabricated on SIMOX and ZMR substrates was studied. Two types of back-channel leakage currents were identified for the SIMOX devices. A back channel leakage due to MOSFET action uses the substrate bias as the gate bias. The other component is due to soft reverse characteristics of the body-drain junction. The back-channel leakage due to MOSFET action varies with the substrate bias and thus varies with irradiation due to threshold-voltage shift. The soft reverse current is a function of drain-body voltage and hence varies with substrate bias and irradiation. The threshold-voltage, I-V characteristics, and subthreshold currents of both front and back channels as a function of total dose were obtained.

  7. Hole mobility enhancements in strained SiSi1yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed

    E-Print Network [OSTI]

    -effect transistors grown on relaxed Si1ÀxGex ,,xËy... virtual substrates C. W. Leitz,a) M. T. Currie, M. L. Lee, Z.-Y. Cheng, D. A. Antoniadis,b) and E. A. Fitzgerald Department of Materials Science and Engineering

  8. CO Oxidation on Pt-Group Metals from Ultrahigh Vacuum to Near Atmospheric Pressures. F. Gao, Y. Cai, K. K. Gath, Y. Wang, M. S. Chen, Q. L. Guo, and D. W. Goodman*

    E-Print Network [OSTI]

    Goodman, Wayne

    CO Oxidation on Pt-Group Metals from Ultrahigh Vacuum to Near Atmospheric Pressures. 1. Rhodium FVised Manuscript ReceiVed: NoVember 3, 2008 The CO oxidation reaction on Rh(111) was studied both at low pressures reactor at various gaseous reactant compositions. Surface CO and O coverages were determined using

  9. Matrix photooxidation of the metal carbonyls M(CO)/sub 6/ (M = Cr, W) by the isoelectronic molecules carbon dioxide and nitrous oxide

    SciTech Connect (OSTI)

    Almond, M.J.; Downs, A.J.; Perutz, R.N.

    1985-01-30T23:59:59.000Z

    Photolysis of the hexacarbonyl molecules M(CO)/sub 6/ (M = Cr or W) in the presence of either CO/sub 2/ or N/sub 2/O has been explored by examining the IR, Raman, and UV-visible spectra of solid argon or methane matrices at ca. 20 K. Hence it has been established that the hexacarbonyl undergoes photooxidation at the hands of CO/sub 2/ or N/sub 2/O, the reaction proceeding in three stages. First, photolysis gives rise to a complex of the type XO-M(CO)/sub 5/ (X = OC or N/sub 2/), which is photochromic, being readily converted to Y-M(CO)/sub 5/ (Y = Ar, CH/sub 4/) and M(CO)/sup 6/ with the release of CO/sub 2/ or N/sub 2/O. Second, complexing activates the CO/sub 2/ or N/sub 2/O molecule to photodissociation at wavelengths far in excess of the normal thresholds, so that continued UV photolysis leads to oxidation of the metal carbonyl to oxo-metal carbonyl intermediates O/sub x/M(CO)/sub y/ containing M=O groups, e.g. trans-O/sub 2/W(CO)/sub 4/; there is simultaneous reduction of CO/sub 2/ to CO and of N/sub 2/O to N/sub 2/. In addition, Cr(CO)/sub 6/ but not W(CO)/sub 6/ gives what is believed to be a binuclear intermediate incorporating CO/sub 2/. Finally, after prolonged UV photolysis, oxidation of the metal carbonyls affords the binary metal oxide molecules CrO/sub 2/ and WO/sub 3/. 44 references, 6 figures, 3 tables.

  10. Conductive layer for biaxially oriented semiconductor film growth

    DOE Patents [OSTI]

    Findikoglu, Alp T. (Los Alamos, NM); Matias, Vladimir (Santa Fe, NM)

    2007-10-30T23:59:59.000Z

    A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

  11. Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

    SciTech Connect (OSTI)

    Baek, Seung-heon Chris; Seo, Yu-Jin; Oh, Joong Gun; Albert Park, Min Gyu; Bong, Jae Hoon; Yoon, Seong Jun; Lee, Seok-Hee, E-mail: seokheelee@ee.kaist.ac.kr [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Seo, Minsu; Park, Seung-young [Division of Materials Science, Korea Basic Science Institute (KBSI), 169-148 Daehak-ro, Yuseong-gu, Daejeon 305-333 (Korea, Republic of); Park, Byong-Guk [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

    2014-08-18T23:59:59.000Z

    In this paper, we report the alleviation of the Fermi-level pinning on metal/n-germanium (Ge) contact by the insertion of multiple layers of single-layer graphene (SLG) at the metal/n-Ge interface. A decrease in the Schottky barrier height with an increase in the number of inserted SLG layers was observed, which supports the contention that Fermi-level pinning at metal/n-Ge contact originates from the metal-induced gap states at the metal/n-Ge interface. The modulation of Schottky barrier height by varying the number of inserted SLG layers (m) can bring about the use of Ge as the next-generation complementary metal-oxide-semiconductor material. Furthermore, the inserted SLG layers can be used as the tunnel barrier for spin injection into Ge substrate for spin-based transistors.

  12. Influence of surface defects and local structure on acid/base properties and oxidation pathways over metal oxide surfaces. Final report, June 1990--January 1997

    SciTech Connect (OSTI)

    Cox, D.F.

    1997-12-31T23:59:59.000Z

    This final report covers work done during project period one and project period two. All the work in project period one was focused on the selective oxidation of oxygenated hydrocarbons over the SnO{sub 2}(110) single crystal surface. In project period two, the emphasis was on the acid/base properties of SnO{sub 2}(110) as well as two different Cu{sub 2}O single crystal surfaces. Prior to the summary of results, a description of these different surfaces is given as background information. Results are described for the dissociation and reaction of Bronsted acids (methanol, formic acid, water, formaldehyde, acetone, propene, acetic acid, and carbon monoxide). Results from project period two include: ammonia adsorption, CO{sub 2} adsorption, propene adsorption and oxidation, with tin oxides; complimentary work with copper oxides; and STM investigations.

  13. Actinide metal processing

    DOE Patents [OSTI]

    Sauer, N.N.; Watkin, J.G.

    1992-03-24T23:59:59.000Z

    A process for converting an actinide metal such as thorium, uranium, or plutonium to an actinide oxide material by admixing the actinide metal in an aqueous medium with a hypochlorite as an oxidizing agent for sufficient time to form the actinide oxide material and recovering the actinide oxide material is described together with a low temperature process for preparing an actinide oxide nitrate such as uranyl nitrate. Additionally, a composition of matter comprising the reaction product of uranium metal and sodium hypochlorite is provided, the reaction product being an essentially insoluble uranium oxide material suitable for disposal or long term storage.

  14. Actinide metal processing

    DOE Patents [OSTI]

    Sauer, Nancy N. (Los Alamos, NM); Watkin, John G. (Los Alamos, NM)

    1992-01-01T23:59:59.000Z

    A process of converting an actinide metal such as thorium, uranium, or plnium to an actinide oxide material by admixing the actinide metal in an aqueous medium with a hypochlorite as an oxidizing agent for sufficient time to form the actinide oxide material and recovering the actinide oxide material is provided together with a low temperature process of preparing an actinide oxide nitrate such as uranyl nitrte. Additionally, a composition of matter comprising the reaction product of uranium metal and sodium hypochlorite is provided, the reaction product being an essentially insoluble uranium oxide material suitable for disposal or long term storage.

  15. Durable metallized polymer mirror

    DOE Patents [OSTI]

    Schissel, Paul O. (Golden, CO); Kennedy, Cheryl E. (Lafayette, CO); Jorgensen, Gary J. (Pine, CO); Shinton, Yvonne D. (Northglenn, CO); Goggin, Rita M. (Englewood, CO)

    1994-01-01T23:59:59.000Z

    A metallized polymer mirror construction having improved durability against delamination and tunneling, comprising: an outer layer of polymeric material; a metal oxide layer underlying the outer layer of polymeric material; a silver reflective layer underneath the metal oxide layer; and a layer of adhesive attaching the silver layer to a substrate.

  16. Durable metallized polymer mirror

    DOE Patents [OSTI]

    Schissel, P.O.; Kennedy, C.E.; Jorgensen, G.J.; Shinton, Y.D.; Goggin, R.M.

    1994-11-01T23:59:59.000Z

    A metallized polymer mirror construction is disclosed having improved durability against delamination and tunneling, comprising: an outer layer of polymeric material; a metal oxide layer underlying the outer layer of polymeric material; a silver reflective layer underneath the metal oxide layer; and a layer of adhesive attaching the silver layer to a substrate. 6 figs.

  17. Reducible oxide based catalysts

    DOE Patents [OSTI]

    Thompson, Levi T.; Kim, Chang Hwan; Bej, Shyamal K.

    2010-04-06T23:59:59.000Z

    A catalyst is disclosed herein. The catalyst includes a reducible oxide support and at least one noble metal fixed on the reducible oxide support. The noble metal(s) is loaded on the support at a substantially constant temperature and pH.

  18. Adsorption of propane, isopropyl, and hydrogen on cluster models of the M1 phase of Mo-V-Te-Nb-O mixed metal oxide catalyst

    SciTech Connect (OSTI)

    Govindasamy, Agalya [University of Cincinnati; Muthukumar, Kaliappan [University of Cincinnati; Yu, Junjun [University of Cincinnati; Xu, Ye [ORNL; Guliants, Vadim V. [University of Cincinnati

    2010-01-01T23:59:59.000Z

    The Mo-V-Te-Nb-O mixed metal oxide catalyst possessing the M1 phase structure is uniquely capable of directly converting propane into acrylonitrile. However, the mechanism of this complex eight-electron transformation, which includes a series of oxidative H-abstraction and N-insertion steps, remains poorly understood. We have conducted a density functional theory study of cluster models of the proposed active and selective site for propane ammoxidation, including the adsorption of propane, isopropyl (CH{sub 3}CHCH{sub 3}), and H which are involved in the first step of this transformation, that is, the methylene C-H bond scission in propane, on these active site models. Among the surface oxygen species, the telluryl oxo (Te=O) is found to be the most nucleophilic. Whereas the adsorption of propane is weak regardless of the MO{sub x} species involved, isopropyl and H adsorption exhibits strong preference in the order of Te=O > V=O > bridging oxygens > empty Mo apical site, suggesting the importance of TeO{sub x} species for H abstraction. The adsorption energies of isopropyl and H and consequently the reaction energy of the initial dehydrogenation of propane are strongly dependent on the number of ab planes included in the cluster, which points to the need to employ multilayer cluster models to correctly capture the energetics of surface chemistry on this mixed metal oxide catalyst.

  19. In situ X-ray absorption fine structure studies of foreign metal ions in nickel hydrous oxide electrodes in alkaline electrolytes

    SciTech Connect (OSTI)

    Kim, Sunghyun; Tryk, D.A.; Scherson, D. (Case Western Reserve Univ., Cleveland, OH (United States)); Antonio, M.R. (Argonne National Lab., IL (United States)); Carr, R. (Stanford Synchrotron Radiation Lab., CA (United States))

    1994-10-06T23:59:59.000Z

    Aspects of the structural and electronic properties of hydrous oxide films of composite (9:1) Ni/Co and (9:1) Ni/Fe, prepared by electrodeposition, have been examined in alkaline electrolytes using in situ X-ray absorption fine structure (XAFS). An analysis of the X-ray absorption near the edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) for the Co and Fe K-edges of these composite hydrous oxides revealed that, regardless of the oxidation state of nickel sites in the films, the guest metal ions are present as Co[sup 3+] and Fe[sup 3+] and that the cobalt-oxygen distance d(Co-O) = 1.9 [+-] 0.02 [angstrom] and d(Fe-O) = 1.92 [+-] 0.02 [angstrom]. The latter values are in excellent agreement with d(Me-O) (Me = Co or Fe) in CoOOH and [beta]- and [gamma]-FeOOH, respectively, determined by conventional X-ray diffraction. Two clearly defined Me-Ni first coordination shells could be observed in the Fourier transforms (FT) of the K-edge EXAFS of the guest metal recorded at a potential at which both Ni[sup 2+] and Ni[sup 3+] sites are expected to be present. 28 refs., 10 figs., 3 tabs.

  20. Method for synthesis of high T[sub c] superconducting materials by oxidation and press coating of metallic precursor alloys

    DOE Patents [OSTI]

    Gao, W.; Vander Sande, J.B.

    1993-01-19T23:59:59.000Z

    A superconductor oxide composite is prepared using a press coating technique. The coated layers on various substrates exhibit good adhesion, textured microstructure, and improved J[sub c].