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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents [OSTI]

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

2

E-Print Network 3.0 - active complementary metal-oxide-semiconductor...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ion-implanted p and n dopants in germanium Summary: wavelength spectrum allowing optoelectronic integra- tion to enhance complementary-metal-oxide- semiconductor... lim- its in...

3

E-Print Network 3.0 - area metal-oxide-semiconductor electron...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

inversion layer mobility Joo-Hiuk Son,a) Seongtae... measured absorption of terahertz radiation pulses by metal-oxide-semiconductor MOS inversion layers... of the...

4

Designing Semiconductor Metal Oxides for Photoelectrochemical Energy Conversion  

Science Journals Connector (OSTI)

Innovative materials hold the key for renewable energy conversion. In this talk, we will introduce our recent progress in semiconducting metal oxides, which underpin a number of...

Wang, Lianzhou

5

Comparative study of polyoxometalates and semiconductor metal oxides as catalyst. Photochemical oxidative degradation of thioethers  

SciTech Connect (OSTI)

The photochemical degradation of thioether substrates catalyzed by representative semiconductor metal oxides and sulfides (anatase TiO{sub 2}, SnO{sub 2}, cubic WO{sub 3}, and CdS) and photoredox-active early-transition-metal polyometalates (W{sub 10}O{sub 32}{sup 4{minus}}, PMo{sub 12}O{sub 40}{sup 3{minus}}, PW{sub 12}O{sub 40}{sup 3{minus}}, SiMo{sub 12}O{sub 40}{sup 4{minus}}, PV{sub 2}Mo{sub 10}O{sub 10}{sup 5{minus}}, and P{sub 2}W{sub 18}O{sub 62}{sup 6{minus}}) have been examined under both anaerobic and aerobic conditions. Under anaerobic conditions, all the semiconductors are completely ineffective at photochemically oxidizing or degrading the exemplary thioether substrate tetrahydrothiophene (THT) in the oxidatively resistant solvent acetonitrile. In contrast, all the homogeneous polyoxometalate systems under the same reaction condition, except the neutral tetra-n-butylammonium (Q) salt of PW{sub 12}O{sub 40}{sup 3{minus}}, are quite effective. The latter systems generate products derived from the carbon-based radical {alpha} to the sulfur atom and not sulfoxide or sulfone, the usual products of thioether oxidation by oxometal species. The rate for the most active anaerobic system, that involving the photochemical degradation of THT by Q{sub 4}W{sub 10}O{sub 32}, under optically dilute conditions, is first order in W{sub 10}O{sub 32} {sup 4{minus}} and light intensity and variable order in THT substrate. A rate law consistent with these data is given. Upon addition of O{sub 2}, TiO{sub 2} (with or without Pt(O)) becomes highly active, SnO{sub 2} becomes active, but WO{sub 3} and CdS remain inactive. Reactivity in thioether oxidation is dominated by the interactions of the semiconductors with O{sub 2} and O{sub 2}-derived intermediates; there is no correlation between reactivity and semiconductor band gap. Upon addition of O{sub 2}, all the polyoxometalate systems become more active. 29 refs., 4 figs., 3 tabs.

Chambers, R.C.; Hill, C.L. (Emory Univ., Atlanta, GA (United States))

1991-06-26T23:59:59.000Z

6

Single-photon imaging in complementary metal oxide semiconductor processes  

Science Journals Connector (OSTI)

...integrated in new materials, e.g. germanium-on-silicon...implemented as an active or as passive...bias of the cathode or the anode...A review of active and passive...voltage at the cathode to follow an...semiconductor material with decreasing...region. The cathode (in this case...whereas active quenching is...

2014-01-01T23:59:59.000Z

7

Transition metal oxides on organic semiconductors Yongbiao Zhao a  

E-Print Network [OSTI]

semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including toward in simplifying the fabrication process of the organic optoelectronic devices. Ã? 2014 Elsevier B], have gained great attention because of their wide applications in optoelectronic devices composed

Demir, Hilmi Volkan

8

Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators  

SciTech Connect (OSTI)

The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

1985-04-01T23:59:59.000Z

9

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents [OSTI]

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2001-01-01T23:59:59.000Z

10

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents [OSTI]

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2002-01-01T23:59:59.000Z

11

Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems  

SciTech Connect (OSTI)

The Al{sub 2}O{sub 3}/GaAs and HfO{sub 2}/GaAs interfaces after atomic layer deposition are studied using in situ monochromatic x-ray photoelectron spectroscopy. Samples are deliberately exposed to atmospheric conditions and interfacial oxide re-growth is observed. The extent of this re-growth is found to depend on the dielectric material and the exposure temperature. Comparisons with previous studies show that ex situ characterization can result in misleading conclusions about the interface reactions occurring during the metal oxide deposition process.

McDonnell, S.; Dong, H.; Hawkins, J. M.; Brennan, B.; Milojevic, M.; Aguirre-Tostado, F. S.; Zhernokletov, D. M.; Hinkle, C. L.; Kim, J.; Wallace, R. M.

2012-04-02T23:59:59.000Z

12

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

13

Ultra-high vacuum fabrication and electrical characterization of environmentally sensitive metal oxide semiconductor capacitors  

SciTech Connect (OSTI)

We describe an integrated, ultra-high vacuum system for metal oxide semiconductor (MOS) device fabrication and characterization. Such a system is advantageous for electrical property measurements of electronic devices consisting of environmentally sensitive materials especially as device dimensions approach the nanoscale. Without exposure to atomosphere, MOS capacitors were fabricated by evaporating gate metal on molecular-beam-epitaxy (MBE) grown dielectrics on 3 inch-diameter substrates through a shadow mask in a UHV electrode-patterning chamber. The finished device is transferred in vacuum to an in-situ, UHV electrical characterization probe station that was designed with standard UHV coaxial feedthroughs and UHV-compatible, Kapton-insulated coaxial cable. The probe station also includes a heated sample stage that allows for annealing and measurements in a controlled ambient. We obtained excellent agreement between air-ambient ex-situ and in-situ probe station measurements utilizing a capacitor standard compatible with UHV based on single crystal sapphire as the dielectric. The measurements show less than 0.3 % dispersion for frequencies from 20 Hz to 1 MHz. We have successfully measured MOS capacitors and are sensitive to a density of interface states of 1x1010 states cm-2 eV-1. These measurements also show 0.5 % dispersion for measurement frequencies from 20 Hz to 1 kHz and less than 0.1 % from 1 kHz to 1 MHz. The integrated system presented here is one where complex, MBE-grown MOS heterostructures can be synthesized and tested rapidly to elucidate new field-effect-device physics and functionality.

Billman, Curt [Oak Ridge National Laboratory (ORNL); Walker, Frederick Joseph [ORNL

2007-01-01T23:59:59.000Z

14

Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector  

SciTech Connect (OSTI)

This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G. [Institute of Biophysics, Imaging and Optical Science, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom); Sharples, Steve D. [Applied Optics Group, Electrical Systems and Optics Research Division, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom)

2010-02-15T23:59:59.000Z

15

Metal Oxides  

Science Journals Connector (OSTI)

Metal oxides are the class of materials having the widest application in gas sensors. This chapter presents information related to the application of various metal oxides in gas sensors designed on different p...

Ghenadii Korotcenkov

2013-01-01T23:59:59.000Z

16

Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes  

SciTech Connect (OSTI)

A particular edge-dependent inversion current behavior of metal-oxide-semiconductor (MOS) tunneling diodes was investigated utilizing square and comb-shaped electrodes. The inversion tunneling current exhibits the strong dependence on the tooth size of comb-shaped electrodes and oxide thickness. Detailed illustrations of current conduction mechanism are developed by simulation and experimental measurement results. It is found that the electron diffusion current and Schottky barrier height lowering for hole tunneling current both contribute on inversion current conduction. In MOS tunneling photodiode applications, the photoresponse can be improved by decreasing SiO{sub 2} thickness and using comb-shaped electrodes with smaller tooth spacing. Meantime, the high and steady photosensitivity can also be approached by introducing HfO{sub 2} into dielectric stacks.

Lin, Chien-Chih; Hsu, Pei-Lun; Lin, Li; Hwu, Jenn-Gwo, E-mail: jghwu@ntu.edu.tw [Graduate Institute of Electronics Engineering, Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2014-03-28T23:59:59.000Z

17

Performance characterization of microtomography with complementary metal-oxide-semiconductor detectors for computer-aided defect inspection  

SciTech Connect (OSTI)

We developed a computer-aided defect inspection system based on computed tomography (CT). The system consists of a homemade small cone-beam CT (CBCT) system and a graphical toolbox, which is used to extract a computer-aided design (CAD) model from the CT data. In the small CBCT system, the x-ray imaging detector is based on a complementary metal-oxide-semiconductor photodiode array in conjunction with a scintillator. Imaging performance of the detector was evaluated in terms of modulation-transfer function, noise-power spectrum, and detective quantum efficiency. The tomographic imaging performance of the small CBCT system was evaluated in terms of signal-to-noise ratio and contrast-to-noise ratio. The graphical toolbox to support defect inspection incorporates various functional tools such as volume rendering, segmentation, triangular-mesh data generation, and data reduction. All the tools have been integrated in a graphical-user interface form. The developed system can provide rapid visual inspection as well as quantitative evaluation of defects by comparing the extracted CAD file with the original file, if available, of an object. The performance of the developed system is demonstrated with experimental CT volume data.

Kim, Ho Kyung; Yun, Seungman; Han, Jong Chul; Youn, Hanbean; Cho, Min Kook; Lim, Chang Hwy [School of Mechanical Engineering, Pusan National University, Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Heo, Sung Kyn; Shon, Cheol-Soon [Sensor Business Division, E-WOO Technology Co., Ltd., Bora-dong, Giheung, Gyeonggi-do 449-904 (Korea, Republic of); Kim, Seong-Sik; Cho, Bong Hae [School of Dentistry, Pusan National University, Ami-dong, Seo-gu, Busan 602-739 (Korea, Republic of); Achterkirchen, Thorsten Graeve [Rad-icon Imaging Corp., Belick Street, Santa Clara, CA 95054-2404 (United States)

2009-05-01T23:59:59.000Z

18

Ferromagnetism in Oxide Semiconductors  

SciTech Connect (OSTI)

In order to become a practical technology, semiconductor spintronics requires the discovery and utilization of ferromagnetic semiconductors which exhibit spin polarization in the majority carrier band at and above room temperature. Intrinsic remanent magnetization would allow spin polarized currents to be propagated in such materials without the need for a continuous magnetic field. However, the discovery and understanding of such materials is proving to be a grand challenge in solid-state science. Indeed, one of the 125 critical unanswered scientific questions recently posed in Science magazine asks, “Is it possible to create magnetic semiconductors that work at room temperature?”

Chambers, Scott A.; Droubay, Timothy C.; Wang, Chong M.; Rosso, Kevin M.; Heald, Steve M.; Schwartz, S. A.; Kittilstved, Kevin R.; Gamelin, Daniel R.

2006-11-01T23:59:59.000Z

19

Selective CO{sub 2} reduction conjugated with H{sub 2}O oxidation utilizing semiconductor/metal-complex hybrid photocatalysts  

SciTech Connect (OSTI)

We developed a new hybrid photocatalyst for CO{sub 2} reduction, which is composed of a semiconductor and a metal complex. In the hybrid photocatalyst, ?G between the position of conduction band minimum (E{sub CBM}) of the semiconductor and the CO{sub 2} reduction potential of the complex is an essential factor for realizing fast electron transfer from the conduction band of semiconductor to metal complex leading to high photocatalytic activity. On the basis of this concept, the hybrid photocatalyst InP/Ru-complex, which functions in aqueous media, was developed. The photoreduction of CO{sub 2} to formate using water as an electron donor and a proton source was successfully achieved as a Z-scheme system by functionally conjugating the InP/Ru-complex photocatalyst for CO{sub 2} reduction with a TiO{sub 2} photocatalyst for water oxidation. The conversion efficiency from solar energy to chemical energy was ca. 0.04%, which approaches that for photosynthesis in a plant. Because this system can be applied to many other inorganic semiconductors and metal-complex catalysts, the efficiency and reaction selectivity can be enhanced by optimization of the electron transfer process including the energy-band configurations, conjugation conformations, and catalyst structures. This electrical-bias-free reaction is a huge leap forward for future practical applications of artificial photosynthesis under solar irradiation to produce organic species.

Morikawa, T., E-mail: morikawa@mosk.tytlabs.co.jp; Sato, S., E-mail: morikawa@mosk.tytlabs.co.jp; Arai, T., E-mail: morikawa@mosk.tytlabs.co.jp; Uemura, K., E-mail: morikawa@mosk.tytlabs.co.jp; Yamanaka, K. I., E-mail: morikawa@mosk.tytlabs.co.jp; Suzuki, T. M., E-mail: morikawa@mosk.tytlabs.co.jp; Kajino, T., E-mail: morikawa@mosk.tytlabs.co.jp; Motohiro, T., E-mail: morikawa@mosk.tytlabs.co.jp [Toyota Central R and D Labs, Inc., Nagakute, Aichi 480-1192 (Japan)

2013-12-10T23:59:59.000Z

20

IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 10, NO. 3, MAY 2011 499 TiSi2 Nanocrystal Metal Oxide Semiconductor Field  

E-Print Network [OSTI]

IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 10, NO. 3, MAY 2011 499 TiSi2 Nanocrystal Metal Oxide memory window, faster writing and erasing, and longer retention lifetime as a result of the metallic property of the silicide NCs. Due to thermally stable, CMOS compatible properties, TiSi2 NCs are highly

Yang, Zheng

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Novel, band-controlled metal oxide compositions for semiconductor-mediated photocatalytic splitting of water to produce H{sub 2}  

SciTech Connect (OSTI)

Semiconductor-mediated photo-catalytic dissociation of water offers a unique opportunity for the production of H{sub 2}, a sustainable source of energy. More efficient and chemically stable photo-catalysts, however, remain a vital requirement for commercial viability of this process. The recent research in my group has focused on the synthesis of several new metal oxide (MO) photo-catalysts, such as: LaInO{sub 3}, GaFeO{sub 3}, InVO{sub 4}, In{sub 2}TiO{sub 5} and nanotubular TiO{sub 2}. These samples of controlled grain morphology have been synthesized by using different synthesis protocols and with and without coating of a noble metal co-catalyst. The doping of an impurity, either at cationic or at anionic lattice site, has helped in the tailoring of band structure and making these oxides visible-light-sensitive. Our study has revealed that the surface characteristics, grain morphology, band structure, and doping-induced lattice imperfections control the photo-physical properties and overall photo-catalytic water splitting activity of these metal/MO composites [1-6]. We have demonstrated that, besides promoting certain charge-transfer steps, metal-semiconductor interfaces influence the adsorption of water molecules and their subsequent interaction with photo-generated electron-hole pair at the catalyst surface. The role played by the above-mentioned micro-structural properties in photo-catalytic water splitting process will be discussed.

Gupta, Narendra M. [Catalysis Division, National Chemical Laboratory, Dr. Homi Bhabha Road, Pune - 411008 (India)

2013-02-05T23:59:59.000Z

22

Silicon metal-semiconductor-metal photodetector  

DOE Patents [OSTI]

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

23

Silicon metal-semiconductor-metal photodetector  

DOE Patents [OSTI]

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1995-01-01T23:59:59.000Z

24

Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces  

SciTech Connect (OSTI)

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200?°C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.

Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ohtake, Akihiro [National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Ichikawa, Masakazu [The University of Tokyo, Tokyo 113-8656 (Japan)

2014-06-09T23:59:59.000Z

25

Semiconductor-To-Metal Transitions in Transition-Metal Compounds  

Science Journals Connector (OSTI)

The theory presented in a previous paper is applied to the transition-metal compounds which are known to exhibit semiconductor-to-metal transitions. In particular, the predictions of the theory are compared with the experimental results of Feinleib and Paul on V2O3. Very good agreement is obtained for the magnitude of the energy gap and for its pressure and stress coefficients. The theory appears to be consistent with the available data on the other oxides of vanadium and titanium as well. Band models for all of these compounds are suggested. The effects of spin-disorder scattering and broadening, polaron formation, and non-stoichiometry are considered quantitatively.

David Adler; Julius Feinleib; Harvey Brooks; William Paul

1967-03-15T23:59:59.000Z

26

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition...

27

Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O  

Science Journals Connector (OSTI)

The exothermic nature of oxidation causes nearly all semiconductor applications in various fields like electronics, medicine, photonics, and sensor technology to acquire an oxidized semiconductor surface part during the application manufacturing. The significance of understanding and controlling the atomic scale properties of oxidized semiconductor surfaces is expected to increase even further with the development of nanoscale semiconductor crystals. The nature of oxidized semiconductor layers is, however, hard to predict and characterize as they are usually buried and amorphous. To shed light on these issues, we pursue a different approach based on oxidized III-V semiconductor layers that are crystalline. We present a comprehensive characterization of oxidized crystalline InSb(100)(1×2)-O layers by ab initio calculations, photoelectron spectroscopy, scanning tunneling microscopy, and spectroscopy, and demonstrate the electronic band structures of different oxidized phases of the semiconductor, which elucidate the previous contradictory semiconductor-oxidation effects. At 0.5 monolayer (ML) oxidation, oxygen atoms tend to occupy subsurface Sb sites, leading to metallic states in the semiconductor band gap, which arise from top dimers. When the oxidation is increased to the 1.0–2.0 ML concentration, oxygen occupies also interstitial sites, and the insulating band structure without gap states is stabilized with unusual occupied In dangling bonds. In contrast, the 2.5–3.0 ML oxide phases undergo significant changes toward a less ordered structure. The findings suggest a methodology for manipulating the electronic structure of oxidized semiconductor layers.

J. J. K. Lång; M. P. J. Punkkinen; M. Tuominen; H.-P. Hedman; M. Vähä-Heikkilä; V. Polojärvi; J. Salmi; V.-M. Korpijärvi; K. Schulte; M. Kuzmin; R. Punkkinen; P. Laukkanen; M. Guina; K. Kokko

2014-07-29T23:59:59.000Z

28

Metal oxide films on metal  

DOE Patents [OSTI]

A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

Wu, Xin D. (Los Alamos, NM); Tiwari, Prabhat (Los Alamos, NM)

1995-01-01T23:59:59.000Z

29

Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches  

Science Journals Connector (OSTI)

The robustness of data load of metal–oxide–semiconductor/magnetic tunnel junction (MOS/MTJ) hybrid latches at power-on is examined by using Monte Carlo simulation with the variations in magnetoresistances for MTJs and in threshold voltages for MOSFETs involved in 90?nm technology node. Three differential pair type spin-transfer-torque-magnetic random access memory cells (4T2MTJ 6T2MTJ and 8T2MTJ) are compared for their successful data load at power-on. It is found that the 4T2MTJ cell has the largest pass area in the shmoo plot in TMR ratio (tunnel magnetoresistance ratio) and Vdd in which a whole 256?kb cell array can be powered-on successfully. The minimum TMR ratio for the 4T2MTJ in 0.9?V?

S. Ikeda; T. Hanyu; H. Ohno

2014-01-01T23:59:59.000Z

30

Block Copolymer Templated Chemistry for the Formation of Metallic Nanoparticle Arrays on Semiconductor Surfaces  

Science Journals Connector (OSTI)

One of key ingredients for many future applications is the ability to precisely pattern nanoscale features on technologically relevant semiconductor surfaces such as silicon and germanium, as well as compound semiconductors such as gallium arsenide and indium phosphide. ... Deposition of these metals is possible presumably due to the water solubility of their oxides:? Ge oxide,14c As oxide,24 and P oxide25 are soluble in water. ...

Masato Aizawa; Jillian M. Buriak

2007-09-25T23:59:59.000Z

31

A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors  

SciTech Connect (OSTI)

In this paper, we present a methodology for the identification and quantification of defects responsible for low channel mobility in 4H-Silicon Carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs). To achieve this, we use an algorithm based on 2D-device simulations of a power MOSFET, density functional simulations, and measurement data. Using physical modeling of carrier mobility and interface traps, we reproduce the experimental I-V characteristics of a 4H-SiC doubly implanted MOSFET through drift-diffusion simulation. We extract the position of Fermi level and the occupied trap density as a function of applied bias and temperature. Using these inputs, our algorithm estimates the number of possible trap types, their energy levels, and concentrations at 4H-SiC/SiO{sub 2} interface. Subsequently, we use density functional theory (DFT)-based ab initio simulations to identify the atomic make-up of defects causing these trap levels. We study silicon vacancy and carbon di-interstitial defects in the SiC side of the interface. Our algorithm indicates that the D{sub it} spectrum near the conduction band edge (3.25?eV) is composed of three trap types located at 2.8–2.85?eV, 3.05?eV, and 3.1–3.2?eV, and also calculates their densities. Based on DFT simulations, this work attributes the trap levels very close to the conduction band edge to the C di-interstitial defect.

Ettisserry, D. P., E-mail: deva@umd.edu; Goldsman, N. [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742 (United States); Lelis, A. [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)

2014-03-14T23:59:59.000Z

32

Sample size requirements for estimating effective dose from computed tomography using solid-state metal-oxide-semiconductor field-effect transistor dosimetry  

SciTech Connect (OSTI)

Purpose: Effective dose (ED) is a widely used metric for comparing ionizing radiation burden between different imaging modalities, scanners, and scan protocols. In computed tomography (CT), ED can be estimated by performing scans on an anthropomorphic phantom in which metal-oxide-semiconductor field-effect transistor (MOSFET) solid-state dosimeters have been placed to enable organ dose measurements. Here a statistical framework is established to determine the sample size (number of scans) needed for estimating ED to a desired precision and confidence, for a particular scanner and scan protocol, subject to practical limitations. Methods: The statistical scheme involves solving equations which minimize the sample size required for estimating ED to desired precision and confidence. It is subject to a constrained variation of the estimated ED and solved using the Lagrange multiplier method. The scheme incorporates measurement variation introduced both by MOSFET calibration, and by variation in MOSFET readings between repeated CT scans. Sample size requirements are illustrated on cardiac, chest, and abdomen–pelvis CT scans performed on a 320-row scanner and chest CT performed on a 16-row scanner. Results: Sample sizes for estimating ED vary considerably between scanners and protocols. Sample size increases as the required precision or confidence is higher and also as the anticipated ED is lower. For example, for a helical chest protocol, for 95% confidence and 5% precision for the ED, 30 measurements are required on the 320-row scanner and 11 on the 16-row scanner when the anticipated ED is 4 mSv; these sample sizes are 5 and 2, respectively, when the anticipated ED is 10 mSv. Conclusions: Applying the suggested scheme, it was found that even at modest sample sizes, it is feasible to estimate ED with high precision and a high degree of confidence. As CT technology develops enabling ED to be lowered, more MOSFET measurements are needed to estimate ED with the same precision and confidence.

Trattner, Sigal [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States)] [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States); Cheng, Bin [Department of Biostatistics, Columbia University Mailman School of Public Health, New York, New York 10032 (United States)] [Department of Biostatistics, Columbia University Mailman School of Public Health, New York, New York 10032 (United States); Pieniazek, Radoslaw L. [Center for Radiological Research, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States)] [Center for Radiological Research, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States); Hoffmann, Udo [Department of Radiology, Massachusetts General Hospital and Harvard Medical School, Boston, Massachusetts 02114 (United States)] [Department of Radiology, Massachusetts General Hospital and Harvard Medical School, Boston, Massachusetts 02114 (United States); Douglas, Pamela S. [Department of Medicine, Division of Cardiology, Duke University, Durham, North Carolina 27715 (United States)] [Department of Medicine, Division of Cardiology, Duke University, Durham, North Carolina 27715 (United States); Einstein, Andrew J., E-mail: andrew.einstein@columbia.edu [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York and Department of Radiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York (United States)

2014-04-15T23:59:59.000Z

33

L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer  

SciTech Connect (OSTI)

In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7?nm technology node and/or beyond.

Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

2014-04-21T23:59:59.000Z

34

Contacts Between Metals and Between a Metal and a Semiconductor  

Science Journals Connector (OSTI)

The problem of contacts between metals and between a metal and a semiconductor is treated classically with the help of the results of wave mechanical theory of electron energy states in solids. The potential and electron density distributions in the two bodies near the contact are discussed. The bodies are assumed to be in immediate contact. The problem of a body in vacuum and the problem of two bodies separated by a gap are discussed qualitatively.

H. Y. Fan

1942-10-01T23:59:59.000Z

35

Impact of SF{sub 6} plasma treatment on performance of TaN-HfO{sub 2}-InP metal-oxide-semiconductor field-effect transistor  

SciTech Connect (OSTI)

In this work, the experimental impact of SF{sub 6} plasma treatment on the performance of InP metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into atomic layer deposited HfO{sub 2} via postgate SF{sub 6} plasma treatment. The decreased subthreshold swing, gate leakage (I{sub g}), and increased effective channel mobility ({mu}{sub eff}) indicate that better interface and bulk oxide quality have been achieved with SF{sub 6} plasma treatment due to the formation of stronger Hf-F bonds. Drive current (I{sub d}), transconductance (G{sub m}), and effective channel mobility ({mu}{sub eff}) are improved by 22.3%, 35%, and 35%, respectively, compared with those of control devices.

Wang Yanzhen; Chen Yenting; Zhao Han; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758 (United States)

2011-01-24T23:59:59.000Z

36

Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles  

DOE Patents [OSTI]

The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji Won; Rondinone, Adam J.; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

2014-06-24T23:59:59.000Z

37

Metal-semiconductor hybrid thin films in field-effect transistors  

SciTech Connect (OSTI)

Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number of aluminum dots in different diameters and arrangements are formed by electron beam lithography and employed for thin-film transistors (TFTs). Experimental and computational demonstrations systematically reveal that the field-effect mobility of the TFTs enhances but levels off as the dot density increases, which originates from variations of the effective channel length that strongly depends on the electric field distribution in a transistor channel.

Okamura, Koshi, E-mail: koshi.okamura@kit.edu; Dehm, Simone [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany)] [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); Hahn, Horst [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany) [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt, Petersenstr. 32, 64287 Darmstadt (Germany)

2013-12-16T23:59:59.000Z

38

A Low Temperature Fully Lithographic Process For Metal–Oxide Field-Effect Transistors  

E-Print Network [OSTI]

We report a low temperature ( ~ 100à °C) lithographic method for fabricating hybrid metal oxide/organic field-effect transistors (FETs) that combine a zinc-indium-oxide (ZIO) semiconductor channel and organic, parylene, ...

Sodini, Charles G.

39

Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics  

SciTech Connect (OSTI)

The principal goal in the field of high-Tc ferromagnetic semiconductors is the synthesis, characterization and utilization of semiconductors which exhibit substantial carrier spin polarization at and above room temperature. Such materials are of critical importance in the emerging field of semiconductor spintronics. The interaction leading to carrier spin polarization, exchange coupling between the dopant spins and the valence or conduction band, is known to be sufficiently weak in conventional semiconductors, such as GaAs and Si, that magnetic ordering above cryogenic temperatures is essentially impossible. Since the provocative theoretical predictions of Tc above ambient in p-Mn:ZnO and p-Mn:GaN (T. Dietl et al., Science 287 1019 (2000)), and the observation of room-temperature ferromagnetism in Co:TiO2 anatase (Y. Matsumoto et al., Science 291 854 (2001)), there has been a flurry of work in oxides and nitrides doped with transition metals with unpaired d electrons. It has even been claimed that room-temperature ferromagnetism can be obtained in certain d0 transition metals oxides without a dopant. In this Report, the field of transition metal doped oxides and nitrides is critically reviewed and assessed from a materials science perspective. Since much of the field centers around thin film growth, this Report focuses on films prepared not only by conventional vacuum deposition methods, but also by spin coating colloidal nanoparticles.

Chambers, Scott A.

2006-10-01T23:59:59.000Z

40

Low temperature lithographically patterned metal oxide transistors for large area electronics  

E-Print Network [OSTI]

Optically transparent, wide bandgap metal oxide semiconductors are a promising candidate for large-area electronics technologies that require lightweight, temperature-sensitive flexible substrates. Because these thin films ...

Wang, Annie I. (Annie I-Jen), 1981-

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

METAL OXIDE NANOPARTICLES  

SciTech Connect (OSTI)

This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

2007-10-01T23:59:59.000Z

42

Lithium metal reduction of plutonium oxide to produce plutonium metal  

DOE Patents [OSTI]

A method is described for the chemical reduction of plutonium oxides to plutonium metal by the use of pure lithium metal. Lithium metal is used to reduce plutonium oxide to alpha plutonium metal (alpha-Pu). The lithium oxide by-product is reclaimed by sublimation and converted to the chloride salt, and after electrolysis, is removed as lithium metal. Zinc may be used as a solvent metal to improve thermodynamics of the reduction reaction at lower temperatures. Lithium metal reduction enables plutonium oxide reduction without the production of huge quantities of CaO--CaCl.sub.2 residues normally produced in conventional direct oxide reduction processes.

Coops, Melvin S. (Livermore, CA)

1992-01-01T23:59:59.000Z

43

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO{sub 2} structure using fast I-V measurement  

SciTech Connect (OSTI)

This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO{sub 2} n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V{sub t}) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V{sub t} shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting Hf{sub x}Zr{sub 1?x}O{sub 2} as gate oxide, can reduce the charge/discharge effect.

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw; Lu, Ying-Hsin; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

2014-03-17T23:59:59.000Z

44

NANO - "Green" metal oxides ... | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NANO - "Green" metal oxides ... Water and nano-sized particles isolated from trees, plants and algae are the ingredients of a new recipe for low-cost metal oxides that are widely...

45

Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate  

DOE Patents [OSTI]

A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN); Chisholm, Matthew F. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

46

Metal Oxide Semiconductors for Solar Energy Harvesting.  

E-Print Network [OSTI]

??The correlation between energy consumption and human development illustrates the importance of this societal resource. We will consume more energy in the future. In light… (more)

Thimsen, Elijah

2009-01-01T23:59:59.000Z

47

Chemical Tuning of Metal-Semiconductor Interfaces  

Science Journals Connector (OSTI)

We report a study of the Schottky barrier for Pb films grown on Si surfaces terminated by various metals (Ag, In, Au, and Pb) to explore the atomic-scale physics of the interface barrier and a means to control the barrier height. Electronic confinement by the Schottky barrier results in quantum well states in the Pb films, which are measured by angle-resolved photoemission. The barrier height is determined from the atomic-layer-resolved energy levels and the line widths. A calculation based on the known interface chemistry and the electronegativity yields predicted barrier heights in good agreement with the experiment.

D. A. Ricci; T. Miller; T.-C. Chiang

2004-09-20T23:59:59.000Z

48

A 75 GHz silicon metal-semiconductor-metal Schottky photodiode Sotiris Alexandrou, Chia-Chi Wang, and Thomas Y. Hsiang  

E-Print Network [OSTI]

A 75 GHz silicon metal-semiconductor-metal Schottky photodiode Sotiris Alexandrou, Chia-Chi Wang-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long

49

Recent progress in transparent oxide semiconductors: Materials and device application  

Science Journals Connector (OSTI)

This paper reviews our recent research progress on new transparent conductive oxide (TCO) materials and electronic and optoelectronic devices based on these materials. First, described are the materials including p-type materials, deep-UV transparent TCO(?-Ga2O3), epitaxially grown ITO with atomically flat surface, transparent electrochromic oxide (NbO2F), amorphous TCOs, and nanoporous semiconductor 12CaO · 7Al2O3. Second, presented are TCO-based electronic/optoelectronic devices realized to date, UV/blue LED and UV-sensors based on transparent pn junction and high performance transparent TFT using n-type TCO as an n-channel. Finally, unique optoelectronic properties (p-type degenerate conduction, transfer doping of carriers, RT-stable exciton, and large optical nonlinearity) originating from 2D-electronic nature in p-type layered oxychalcogenides are summarized along with the fabrication method of epitaxial thin films of these materials.

Hideo Hosono

2007-01-01T23:59:59.000Z

50

Nanocomposite of graphene and metal oxide materials  

SciTech Connect (OSTI)

Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10C.

Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

2012-09-04T23:59:59.000Z

51

Methods of producing adsorption media including a metal oxide  

DOE Patents [OSTI]

Methods of producing a metal oxide are disclosed. The method comprises dissolving a metal salt in a reaction solvent to form a metal salt/reaction solvent solution. The metal salt is converted to a metal oxide and a caustic solution is added to the metal oxide/reaction solvent solution to adjust the pH of the metal oxide/reaction solvent solution to less than approximately 7.0. The metal oxide is precipitated and recovered. A method of producing adsorption media including the metal oxide is also disclosed, as is a precursor of an active component including particles of a metal oxide.

Mann, Nicholas R; Tranter, Troy J

2014-03-04T23:59:59.000Z

52

Three-Electrode Metal Oxide Reduction Cell  

DOE Patents [OSTI]

A method of electrochemically reducing a metal oxide to the metal in an electrochemical cell is disclosed along with the cell. Each of the anode and cathode operate at their respective maximum reaction rates. An electrolyte and an anode at which oxygen can be evolved, and a cathode including a metal oxide to be reduced are included as is a third electrode with independent power supplies connecting the anode and the third electrode and the cathode and the third electrode.

Dees, Dennis W. (Downers Grove, IL); Ackerman, John P. (Downers Grove, IL)

2005-06-28T23:59:59.000Z

53

Three-electrode metal oxide reduction cell  

DOE Patents [OSTI]

A method of electrochemically reducing a metal oxide to the metal in an electrochemical cell is disclosed along with the cell. Each of the anode and cathode operate at their respective maximum reaction rates. An electrolyte and an anode at which oxygen can be evolved, and a cathode including a metal oxide to be reduced are included as is a third electrode with independent power supplies connecting the anode and the third electrode and the cathode and the third electrode.

Dees, Dennis W. (Downers Groves, IL); Ackerman, John P. (Downers Grove, IL)

2008-08-12T23:59:59.000Z

54

Direct electrochemical reduction of metal-oxides  

DOE Patents [OSTI]

A method of controlling the direct electrolytic reduction of a metal oxide or mixtures of metal oxides to the corresponding metal or metals. A non-consumable anode and a cathode and a salt electrolyte with a first reference electrode near the non-consumable anode and a second reference electrode near the cathode are used. Oxygen gas is produced and removed from the cell. The anode potential is compared to the first reference electrode to prevent anode dissolution and gas evolution other than oxygen, and the cathode potential is compared to the second reference electrode to prevent production of reductant metal from ions in the electrolyte.

Redey, Laszlo I. (Downers Grove, IL); Gourishankar, Karthick (Downers Grove, IL)

2003-01-01T23:59:59.000Z

55

Graphene/metal Oxide Nanocomposites for Li-ion Batteries  

Science Journals Connector (OSTI)

Our work focuses on preparing the graphene/metal oxide nanocomposites by facile methold and exploring the graphene/metal oxide composites with unique structural or compositions for...

Liang, Junfei; Li, Lidong; Guo, Lin

56

Understanding Atom Probe Tomography of Oxide-Supported Metal...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Atom Probe Tomography of Oxide-Supported Metal Nanoparticles by Correlation with Atomic Resolution Electron Understanding Atom Probe Tomography of Oxide-Supported Metal...

57

Picosecond response of gallium-nitride metal–semiconductor–metal photodetectors  

Science Journals Connector (OSTI)

Metal–semiconductor–metal ultraviolet photodiodes fabricated on GaN were tested in the picosecond regime with an electro-optic sampling system. A device with a feature size of 1 ?m showed a response with 1.4 ps rise time and 3.5 ps full width at half maximum. The derived electron velocity 1.43×10 7 ? cm/s is in good agreement with independent photoexcitation measurements. A slower impulse response was observed in a device with smaller feature size of 0.5?? m .

Jianliang Li; Ying Xu; T. Y. Hsiang; W. R. Donaldson

2004-01-01T23:59:59.000Z

58

Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt  

SciTech Connect (OSTI)

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: 1. wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; 2. n-type semiconductors; 3.they exhibit well defined magnetic hysteresis loops and 4. their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A&M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of research by including investigations of Mn-FeTiO3, Mn-Fe2TiO5 and by producing a novel three terminal device capable of generating bipolar currents besides producing radiation resistant varistors and a magnetically switchable device. Furthermore we conclusively established the radiation hardness of the four modified iron titanates we studied. In all our publications, conference and seminar presentations, dissertations and theses sponsorship of DOE has been acknowledged

Dr. R. K. Pandey, Cudworth Endowed Professor (Professor Emeritus of The Unviersity of Alabama)

2008-11-24T23:59:59.000Z

59

Catalytic production of metal carbonyls from metal oxides  

DOE Patents [OSTI]

This invention relates to the formation of metal carbonyls from metal oxides and specially the formation of molybdenum carbonyl and iron carbonyl from their respective oxides. Copper is used here in admixed form or used in chemically combined form as copper molybdate. The copper/metal oxide combination or combined copper is utilized with a solvent, such as toluene and subjected to carbon monoxide pressure of 25 atmospheres or greater at about 150 to 260/sup 0/C. The reducing metal copper is employed in catalytic concentrations or combined concentrations as CuMoO/sub 4/ and both hydrogen and water present serve as promoters. It has been found that the yields by this process have been salutary and that additionally the catalytic metal may be reused in the process to good effect. 3 tables.

Sapienza, R.S.; Slegeir, W.A.; Foran, M.T.

1984-01-06T23:59:59.000Z

60

High surface area, electrically conductive nanocarbon-supported metal oxide  

DOE Patents [OSTI]

A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust.

Worsley, Marcus A; Han, Thomas Yong-Jin; Kuntz, Joshua D; Cervanted, Octavio; Gash, Alexander E; Baumann, Theodore F; Satcher, Jr., Joe H

2014-03-04T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Lithium metal oxide electrodes for lithium batteries  

DOE Patents [OSTI]

An uncycled electrode for a non-aqueous lithium electrochemical cell including a lithium metal oxide having the formula Li.sub.(2+2x)/(2+x)M'.sub.2x/(2+x)M.sub.(2-2x)/(2+x)O.sub.2-.delta., in which 0.ltoreq.x<1 and .delta. is less than 0.2, and in which M is a non-lithium metal ion with an average trivalent oxidation state selected from two or more of the first row transition metals or lighter metal elements in the periodic table, and M' is one or more ions with an average tetravalent oxidation state selected from the first and second row transition metal elements and Sn. Methods of preconditioning the electrodes are disclosed as are electrochemical cells and batteries containing the electrodes.

Thackeray, Michael M. (Naperville, IL); Kim, Jeom-Soo (Naperville, IL); Johnson, Christopher S. (Naperville, IL)

2008-01-01T23:59:59.000Z

62

Process for etching mixed metal oxides  

DOE Patents [OSTI]

An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

Ashby, Carol I. H. (Edgewood, NM); Ginley, David S. (Evergreen, CO)

1994-01-01T23:59:59.000Z

63

Lattice mismatched compound semiconductors and devices on silicon  

E-Print Network [OSTI]

III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and ...

Yang, Li, Ph. D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

64

Superatoms and Metal-Semiconductor Motifs for Cluster Materials  

SciTech Connect (OSTI)

A molecular understanding of catalysis and catalytically active materials is of fundamental importance in designing new substances for applications in energy and fuels. We have performed reactivity studies and ultrafast ionization and coulomb explosion studies on a variety of catalytically-relevant materials, including transition metal oxides of Fe, Co, Ni, Cu, Ti, V, Nb, and Ta. We demonstrate that differences in charge state, geometry, and elemental composition of clusters of such materials determine chemical reactivity and ionization behavior, crucial steps in improving performance of catalysts.

Castleman, A. W.

2013-10-11T23:59:59.000Z

65

Transition-metal silicides as materials for magnet-semiconductor heterostructures*  

E-Print Network [OSTI]

Transition-metal silicides as materials for magnet-semiconductor heterostructures* Peter Kratzer as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the 001 surface retains the half-metallic character of the bulk if a fully Mn

66

Metal-to-Semiconductor Transition in Hexagonal NiS  

Science Journals Connector (OSTI)

Recent electrical resistivity measurements have shown that the hexagonal form of stoichiometric NiS exhibits an abrupt metal-to-semiconductor transition at 264°K. Neutron diffraction studies have shown that a first-order paramagnetic-to-antiferromagnetic transition also occurs at 264°K. No crystal lattice distortion is observed at the transition nor detected at 4.2°K, suggesting that this may be a transition of the kind considered by Adler and Brooks. The measured magnetic moment at 4.2°K is 1.66±0.08 ?? and at 260°K it is 150.±0.10 ?? indicating that the sublattice magnetization is within 10% of saturation immediately upon ordering. The neutron data also shown that no more than about 1% of the Ni atoms migrate to tetragonal interstitial sites on warming from 4.2°K to room temperature. Thus, Ni atom migration apparently plays no part in this transition. The powder magnetic susceptibility is 2.24×10-6 emu/g at 300°K and is virtually temperature-independent above the transition. ? increases abruptly at 264°K by about 15% and exhibits some field-cooling effects. Studies on the compounds NiXS, for X=1.01, 0.99, 0.97, and 0.94 show that excess sulfur lowers the transition temperature.

JOSEPH T. SPARKS and TED KOMOTO

1968-10-01T23:59:59.000Z

67

Toward Photochemical Water Splitting Using Band-Gap-Narrowed Semiconductors and Transition-Metal Based Molecular Catalysts  

SciTech Connect (OSTI)

We are carrying out coordinated theoretical and experimental studies of toward photochemical water splitting using band-gap-narrowed semiconductors (BGNSCs) with attached multi-electron molecular water oxidation and hydrogen production catalysts. We focus on the coupling between the materials properties and the H{sub 2}O redox chemistry, with an emphasis on attaining a fundamental understanding of the individual elementary steps in the following four processes: (1) Light-harvesting and charge-separation of stable oxide or oxide-derived semiconductors for solar-driven water splitting, including the discovery and characterization of the behavior of such materials at the aqueous interface; (2) The catalysis of the four-electron water oxidation by dinuclear hydroxo transition-metal complexes with quinonoid ligands, and the rational search for improved catalysts; (3) Transfer of the design principles learned from the elucidation of the DuBois-type hydrogenase model catalysts in acetonitrile to the rational design of two-electron hydrogen production catalysts for aqueous solution; (4) Combining these three elements to examine the function of oxidation catalysts on BGNSC photoanode surfaces and hydrogen production catalysts on cathode surfaces at the aqueous interface to understand the challenges to the efficient coupling of the materials functions.

Muckerman,J.T.; Rodriguez, J.A.; Fujita, E.

2009-06-07T23:59:59.000Z

68

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network [OSTI]

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

69

ESS 2012 Peer Review - Engineered Gate Oxides for Wide Bandgap Semiconductor MOSFETs - Jon Ihlefeld, SNL  

Broader source: Energy.gov (indexed) [DOE]

-5 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -6 -4 -2 0 2 4 6 8 10 |J Leakage | (A-cm -2 ) Semiconductor Voltage (V) Engineered Gate Oxides for Wide Bandgap S emiconductor M OSFETs* Jon I hlefeld, M ichael B rumbach, S andeepan D asGupta, and Stanley AtciEy Sandia NaGonal Laboratories *Sponsored b y t he U .S. D epartment o f E nergy's O ffice o f E lectricity E nergy S torage Systems P rogram jihlefe@sandia.gov, 505---844---3162; s atciE@sandia.gov, 505---284---2701 Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND No. 2011-XXXXP Cooling Power electronics Energy storage Energy storage -V gate Low defect oxide Metal gate Wide

70

Reactor process using metal oxide ceramic membranes  

DOE Patents [OSTI]

A reaction vessel for use in photoelectrochemical reactions includes as its reactive surface a metal oxide porous ceramic membrane of a catalytic metal such as titanium. The reaction vessel includes a light source and a counter electrode. A provision for applying an electrical bias between the membrane and the counter electrode permits the Fermi levels of potential reaction to be favored so that certain reactions may be favored in the vessel. The electrical biasing is also useful for the cleaning of the catalytic membrane. Also disclosed is a method regenerating a porous metal oxide ceramic membrane used in a photoelectrochemical catalytic process by periodically removing the reactants and regenerating the membrane using a variety of chemical, thermal, and electrical techniques. 2 figures.

Anderson, M.A.

1994-05-03T23:59:59.000Z

71

Chapter 14 - Metal oxide nanopowder  

Science Journals Connector (OSTI)

Research into soft chemical techniques has gained an importance for the synthesis of high quality advanced nanosized materials with desired properties at the low crystallization temperature. The closer interaction between the material chemists and alkoxide chemists has led to the molecular design of more suitable precursors, for fabrication of functional material has resulted in synergetic developments in both the fields. Metal alkoxide is a versatile precursor and is used for the synthesis of functional gradient nanomaterials, and characterization of materials was carried out in term of composition, microstructure and specific surface area. The write-up provides simple and convenient routes to many building blocks for assembling the structure with novel properties and its functional use in nanotechnology.

Taimur Athar

2015-01-01T23:59:59.000Z

72

Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide  

E-Print Network [OSTI]

Scientic findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last few ...

Pereira, LMC; Wahl, U

73

Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication  

SciTech Connect (OSTI)

Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palto Alto, CA)

2002-01-01T23:59:59.000Z

74

Self-Assembled Metal/Molecule/Semiconductor Nanostructures for Electronic Device  

E-Print Network [OSTI]

565 Self-Assembled Metal/Molecule/Semiconductor Nanostructures for Electronic Device and Contact 27, 1999) Special Issue Paper 565 INTRODUCTION Self-assembly techniques provide a means to real- ize itself to the assembly of specific device structures or intercon- nected devices. For self-assembled

Woodall, Jerry M.

75

How to overcome the oxide barrier | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

oxide semiconductor Atomistic diagram for crystalline chromium metal (light blue) on strontium titanate(top), an equation that describes the transport process (middle), and an...

76

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 6, JUNE 2001 623 MetalSemiconductorMetal Traveling-Wave  

E-Print Network [OSTI]

in high-power distributed PD array or terahertz signal generation. Index Terms--Low-temperature-grown Ga­Semiconductor­Metal Traveling-Wave Photodetectors Jin-Wei Shi, Kian-Giap Gan, Yi-Jen Chiu, Yen-Hung Chen, Chi-Kuang Sun, Member-TWPD). Demonstrated devices were fabricated using low-temperature grown GaAs (LTG-GaAs). In order to achieve high

Bowers, John

77

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors  

Science Journals Connector (OSTI)

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (?-HfIZO) thin film transistors (TFTs). Co-sputtering-processed ?-HfIZO thin films have shown an amorphous phase in nature. ...

Sheng-Po Chang; San-Syong Shih

2012-01-01T23:59:59.000Z

78

Selective Alcohol Dehydrogenation and Hydrogenolysis with Semiconductor-Metal Photocatalysts: Toward Solar-to-Chemical Energy Conversion of Biomass-Relevant Substrates  

Science Journals Connector (OSTI)

Selective Alcohol Dehydrogenation and Hydrogenolysis with Semiconductor-Metal Photocatalysts: Toward Solar-to-Chemical Energy Conversion of Biomass-Relevant Substrates ... Coupled semiconductors of well-matched band energies are convenient to improve charge sepn. ...

T. Purnima A. Ruberu; Nicholas C. Nelson; Igor I. Slowing; Javier Vela

2012-09-13T23:59:59.000Z

79

Nano- sized strontium titanate metal oxide semiconductor oxygen gas sensors.  

E-Print Network [OSTI]

??The project focuses on strontium titanate (SrTiO3> material, a very important material for oxygen sensors. The advantages of the material are low cost and stability… (more)

Hu, Ying.

2008-01-01T23:59:59.000Z

80

Structure, adhesion, and stability of metal/oxide and oxide/oxide interfaces  

SciTech Connect (OSTI)

Studies of structural, electronic, and chemical properties of metal/oxide and oxide/oxide interfaces were performed on well-defined interfaces that created by depositing ultra-thin potassium and aluminum films and their oxides onto single crystal TiO[sub 2] and NiO surfaces. Work focused on determining the structure, growth mechanisms, and morphologies of metal and oxide films as they are deposited an single crystal oxide surfaces using RHEED and atomic force microscopy probing electronic structure, bonding and chemical interactions at the interfaces using x-ray and uv photoelectron spectroscopies (XPS, UPS) and Auger electron spectroscopy (AES), and understanding factors affecting stability and reactivity of the interface regions including the role of defects and impurities. Results indicate that kinetic effects have an important influence on interface structure and composition, and they also show that defects in the oxide substrate induce new electronic states at the interface which play a major role in cation-anion bonding and interface interactions. The results establish a link between electronic and chemical bonding properties and the interface structure and morphology, which is required to successfully manipulate the interfacial properties of advanced ceramic materials.

Lad, R.J.

1992-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Transition metal-promoted oxygen ion conductors as oxidation catalyst  

SciTech Connect (OSTI)

A novel metal oxide composite catalyst for the complete oxidation of carbon monoxide and hydrocarbons was prepared by combining oxygen ion conducting materials with active transition metals. The oxygen ion conductors used were typical fluorite-type oxides, such as ceria, zirconia, and others. Active base metal catalysts, such as copper, were used as additives to promote the catalytic properties of oxygen ion conductors. The intimate contact of the two kinds of materials gave rise to a highly active oxidation catalyst. On Cu-Ce-O composite catalysts, 95% of carbon monoxide was oxidized by air at {approximately} 100 C. Complete methane oxidation on the same catalyst took place at {approximately} 550 C. When the stoichiometric amount of sulfur dioxide was sued to oxidize carbon monoxide, 96% of sulfur dioxide was reduced to elemental sulfur at temperatures above 460 C with 99% of sulfur dioxide conversion. This type of composite catalyst also showed excellent resistance to water poisoning.

Liu, W.; Sarofim, A. [Massachusetts Inst. of Tech., Cambridge, MA (United States). Dept. of Chemical Engineering; Flytzani-Stephanopoulos, M. [Tufts Univ., Medford, MA (United States). Dept. of Chemical Engineering

1994-12-31T23:59:59.000Z

82

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism  

SciTech Connect (OSTI)

The electronic and magnetic properties of graphene nanoflakes (GNFs) can be tuned by patterned adsorption of hydrogen. Controlling the H coverage from bare GNFs to half hydrogenated and then to fully hydrogenated GNFs, the transformation of small-gap semiconductor {yields} half-metal {yields} wide-gap semiconductor occurs, accompanied by a magnetic {yields} magnetic {yields} nonmagnetic transfer and a nonmagnetic {yields} magnetic {yields} nonmagnetic transfer for triangular and hexagonal nanoflakes, respectively. The half hydrogenated GNFs, associated with strong spin polarization around the Fermi level, exhibit the unexpected large spin moment that is scaled squarely with the size of flakes. The induced spin magnetizations of these nanoflakes align parallel and lead to a substantial collective character, enabling the half hydrogenated GNFs to be spin-filtering flakes. These hydrogenation-dependent behaviors are then used to realize an attractive approach to engineer the transport properties, which provides a new route to facilitate the design of tunable spin devices.

Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Sun, Xin; Zu, Xiaotao; Gao, Fei

2012-03-08T23:59:59.000Z

83

Metal-insulator-semiconductor structure on low-temperature grown GaAs M. Young, W. Li, and T. P. Ma  

E-Print Network [OSTI]

Metal-insulator-semiconductor structure on low-temperature grown GaAs A. Chen,a M. Young, W. Li Received 28 July 2006; accepted 30 October 2006; published online 7 December 2006 The metal-insulator dielectrics and metal-insulator-semiconductor MIS structures; for ex- ample, in situ deposited Ga2O3 Gd2O3

Woodall, Jerry M.

84

Prospects and merits of metal-clad semiconductor lasers from nearly UV to far IR  

E-Print Network [OSTI]

Using metal-clad (or plasmonic) waveguide structures in semiconductor lasers carries a promise of reduced size, threshold, and power consumption. This promise is put to a rigorous theoretical test, that takes into account increased waveguide loss, Auger recombination, and Purcell enhancement of spontaneous recombination. The conclusion is that purported benefits of metal waveguides are small to nonexistent for all the band-to-band and intersubband lasers operating from UV to Mid-IR range, with a prominent exception of far-IR and THz quantum cascade lasers. For these devices, however, metal waveguides already represent the state of the art, and the guiding mechanism in them has far more in common with a ubiquitous transmission line than with plasmonics.

Khurgin, Jacob B

2015-01-01T23:59:59.000Z

85

Route to transition metal carbide nanoparticles through cyanamide and metal oxides  

SciTech Connect (OSTI)

We have designed an efficient route to the synthesis of transition metal carbide nanoparticles starting from an organic reagent cyanamide and transition metal oxides. Four technologically important metal carbide nanoparticles such as tungsten carbide, niobium carbide, tantalum carbide and vanadium carbide were synthesized successfully at moderate temperatures. It is found that cyanamide is an efficient carburization reagent and that the metal oxides are completely transmitted into the corresponding carbide nanoparticles. A possible mechanism is proposed to explain the results of the reaction between cyanamide and the metal oxides.

Li, P.G. [Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018 (China)], E-mail: peigangiphy@yahoo.com.cn; Lei, M.; Tang, W.H. [Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018 (China)

2008-12-01T23:59:59.000Z

86

Structure, adhesion, and stability of metal/oxide and oxide/oxide interfaces  

SciTech Connect (OSTI)

During the past six months, we have begun our studies of the fundamental properties of metal/oxide and oxide/oxide heterogeneous interfaces which are being prepared by epitaxial growth of ultra-thin-films on single crystal TiO{sub 2} and NiO surfaces. A new ultra-high vacuum film growth chamber was assembled and coupled to an existing surface analysis chamber; a sample transfer system, metal deposition sources, and a RHEED systems with microchannel plate detection were constructed and implemented. Atomic Force Microscopy was used to characterize and refine the preparation procedures for the single crystal surfaces. The electronic structure of stoichiometric, oxygen-deficient, and potassium-covered TiO{sub 2} (110) surfaces was investigated. Preliminary results on the Al/TiO{sub 2} (110) system have been obtained. Two graduate students have begun thesis research on the project. 6 figs.

Lad, R.J.

1991-01-01T23:59:59.000Z

87

Investigation of the semiconductor–oxide electrolyte interface in GaAs utilizing electrolyte electroreflectance  

Science Journals Connector (OSTI)

We have investigated the electrolyte electroreflectance (EER) spectra of N–GaAs in the vicinity of the E o transition (direct gap at k?=0). A pronounced interference phenomenon sensitive to the d c b i a s e l e c t r i c f i e l d has been observed which we identify with an exciton quenching effect within the semiconductor space–charge region (SCR). We have utilized this excitonic feature to interferometrically probe the dynamic and steady?state properties of the SCR during electrochemical anodization procedures. The same EER spectra also exhibit Franz–Keldysh oscillations the period of which is explicitly dependent on the a c e l e c t r i c f i e l d. Using these phenomena we have shown that the interfacial and oxide electric fields under steady?state conditions are just sufficient to continue growing the oxide in compensation for slow dissolution. If the dc bias voltage is suddenly reduced the SCR temporarily collapses due to transient effects which we attribute to very slow interface states in the oxide. These techniques are applicable to the study of the SCR in a variety of semiconductor–electrolyte systems as well as in the Schottky barrier configuration.

R. P. Silberstein; F. H. Pollak

1980-01-01T23:59:59.000Z

88

Method and apparatus for the production of metal oxide powder  

DOE Patents [OSTI]

The present invention provides a method for preparing metal oxide powder. A first solution, which is substantially organic, is prepared. A second solution, which is an aqueous solution substantially immiscible in the first solution, is prepared and delivered as drops to the first solution. The drops of the second solution are atomized by a pulsed electric field forming micro-drops of the second solution. Reagents in the first solution diffuse into and react with reactants in the micro-drops of the second solution forming metal hydroxide or oxalate particles. The metal hydroxide or metal oxalate particles are then recovered and dried to produce the metal oxide powder. An apparatus for preparing a metal oxide powder is also disclosed.

Harris, Michael T. (Knoxville, TN); Scott, Timothy C. (Knoxville, TN); Byers, Charles H. (Oak Ridge, TN)

1993-01-01T23:59:59.000Z

89

Method and apparatus for the production of metal oxide powder  

DOE Patents [OSTI]

The present invention provides a method for preparing metal oxide powder. A first solution, which is substantially organic, is prepared. A second solution, which is an aqueous solution substantially immiscible in the first solution, is prepared and delivered as drops to the first solution. The drops of the second solution are atomized by a pulsed electric field forming micro-drops of the second solution. Reagents in the first solution diffuse into and react with reactants in the micro-drops of the second solution forming metal hydroxide or oxalate particles. The metal hydroxide or metal oxalate particles are then recovered and dried to produce the metal oxide powder. An apparatus for preparing a metal oxide powder is also disclosed.

Harris, Michael T. (Knoxville, TN); Scott, Timothy C. (Knoxville, TN); Byers, Charles H. (Oak Ridge, TN)

1992-01-01T23:59:59.000Z

90

Method and apparatus for the production of metal oxide powder  

DOE Patents [OSTI]

The present invention provides a method for preparing metal oxide powder. A first solution, which is substantially organic, is prepared. A second solution, which is an aqueous solution substantially immiscible in the first solution, is prepared and delivered as drops to the first solution. The drops of the second solution are atomized by a pulsed electric field forming micro-drops of the second solution. Reagents in the first solution diffuse into and react with reactants in the micro-drops of the second solution forming metal hydroxide or oxalate particles. The metal hydroxide or metal oxalate particles are then recovered and dried to produce the metal oxide powder. An apparatus for preparing a metal oxide powder is also disclosed. 2 figs.

Harris, M.T.; Scott, T.C.; Byers, C.H.

1992-06-16T23:59:59.000Z

91

DOE/BES/NSET annual report on growth of metal and semiconductor nanostructures using localized photocatalysts.  

SciTech Connect (OSTI)

Our overall goal is to understand and develop a novel light-driven approach to the controlled growth of unique metal and semiconductor nanostructures and nanomaterials. In this photochemical process, bio-inspired porphyrin-based photocatalysts reduce metal salts in aqueous solutions at ambient temperatures to provide metal nucleation and growth centers. Photocatalyst molecules are pre-positioned at the nanoscale to control the location and morphology of the metal nanostructures grown. Self-assembly, chemical confinement, and molecular templating are some of the methods used for nanoscale positioning of the photocatalyst molecules. When exposed to light, the photocatalyst molecule repeatedly reduces metal ions from solution, leading to deposition and the synthesis of the new nanostructures and nanostructured materials. Studies of the photocatalytic growth process and the resulting nanostructures address a number of fundamental biological, chemical, and environmental issues and draw on the combined nanoscience characterization and multi-scale simulation capabilities of the new DOE Center for Integrated Nanotechnologies, the University of New Mexico, and Sandia National Laboratories. Our main goals are to elucidate the processes involved in the photocatalytic growth of metal nanomaterials and provide the scientific basis for controlled synthesis. The nanomaterials resulting from these studies have applications in nanoelectronics, photonics, sensors, catalysis, and micromechanical systems. The proposed nanoscience concentrates on three thematic research areas: (1) the creation of nanoscale structures for realizing novel phenomena and quantum control, (2) understanding nanoscale processes in the environment, and (3) the development and use of multi-scale, multi-phenomena theory and simulation. Our goals for FY03 have been to understand the role of photocatalysis in the synthesis of dendritic platinum nanostructures grown from aqueous surfactant solutions under ambient conditions. The research is expected to lead to highly nanoengineered materials for catalysis mediated by platinum, palladium, and potentially other catalytically important metals. The nanostructures made also have potential applications in nanoelectronics, nanophotonics, and nanomagnetic systems. We also expect to develop a fundamental understanding of the uses and limitations of biomimetic photocatalysis as a means of producing metal and semiconductor nanostructures and nanomaterials. The work has already led to a relationship with InfraSUR LLC, a small business that is developing our photocatalytic metal reduction processes for environmental remediation. This work also contributes to science education at a predominantly Hispanic and Native American university.

Haddad, Raid Edward; Brinker, C. Jeffrey; Shelnutt, John Allen; Yang, Yi; Nuttall, H. Eric; Watt, Richard K.; Singl, Anup K.; Challa, Sivakumar R.; Wang, Zhongchun; van Swol, Frank B.; Pereira, Eulalia; Qiu, Yan; Jiang, Ying-Bing; Xu, Huifang; Medforth, Craig J.; Song, Yujiang

2003-10-01T23:59:59.000Z

92

Plutonium metal and oxide container weld development and qualification  

SciTech Connect (OSTI)

Welds were qualified for a container system to be used for long-term storage of plutonium metal and oxide. Inner and outer containers are formed of standard tubing with stamped end pieces gas-tungsten-arc (GTA) welded onto both ends. The weld qualification identified GTA parameters to produce a robust weld that meets the requirements of the Department of Energy standard DOE-STD-3013-94, ``Criteria for the Safe Storage of Plutonium Metals and Oxides.``

Fernandez, R.; Horrell, D.R.; Hoth, C.W.; Pierce, S.W.; Rink, N.A.; Rivera, Y.M.; Sandoval, V.D.

1996-01-01T23:59:59.000Z

93

Inert electrode containing metal oxides, copper and noble metal  

DOE Patents [OSTI]

A cermet composite material is made by treating at an elevated temperature a mixture comprising a compound of iron and a compound of at least one other metal, together with an alloy or mixture of copper and a noble metal. The alloy or mixture preferably comprises particles having an interior portion containing more copper than noble metal and an exterior portion containing more noble metal than copper. The noble metal is preferably silver. The cermet composite material preferably includes alloy phase portions and a ceramic phase portion. At least part of the ceramic phase portion preferably has a spinel structure.

Ray, Siba P. (Murrysville, PA); Woods, Robert W. (New Kensington, PA); Dawless, Robert K. (Monroeville, PA); Hosler, Robert B. (Sarver, PA)

2001-01-01T23:59:59.000Z

94

Inert electrode containing metal oxides, copper and noble metal  

DOE Patents [OSTI]

A cermet composite material is made by treating at an elevated temperature a mixture comprising a compound of iron and a compound of at least one other metal, together with an alloy or mixture of copper and a noble metal. The alloy or mixture preferably comprises particles having an interior portion containing more copper than noble metal and an exterior portion containing more noble metal than copper. The noble metal is preferably silver. The cermet composite material preferably includes alloy phase portions and a ceramic phase portion. At least part of the ceramic phase portion preferably has a spinel structure.

Ray, Siba P. (Murrysville, PA); Woods, Robert W. (New Kensington, PA); Dawless, Robert K. (Monroeville, PA); Hosler, Robert B. (Sarver, PA)

2000-01-01T23:59:59.000Z

95

(Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor-and solar-  

E-Print Network [OSTI]

Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor- and solar- grade and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips%; Venezuela, 15%; Canada, 8%; and other, 8%. Silicon metal: Brazil, 38%; South Africa, 24%; Canada, 16

96

Enhanced Half-Metallicity in Edge-Oxidized Zigzag Graphene  

E-Print Network [OSTI]

Enhanced Half-Metallicity in Edge-Oxidized Zigzag Graphene Nanoribbons Oded Hod,* Vero´nica Barone theoretical study of the electronic properties and relative stabilities of edge-oxidized zigzag graphene with nanometer scale dimen- sions. Recently, a new type of graphene-based material was experimentally realized.12

Hod, Oded

97

Metal-oxide-based energetic materials and synthesis thereof  

DOE Patents [OSTI]

A method of preparing energetic metal-oxide-based energetic materials using sol-gel chemistry has been invented. The wet chemical sol-gel processing provides an improvement in both safety and performance. Essentially, a metal-oxide oxidizer skeletal structure is prepared from hydrolyzable metals (metal salts or metal alkoxides) with fuel added to the sol prior to gelation or synthesized within the porosity metal-oxide gel matrix. With metal salt precursors a proton scavenger is used to destabilize the sol and induce gelation. With metal alkoxide precursors standard well-known sol-gel hydrolysis and condensation reactions are used. Drying is done by standard sol-gel practices, either by a slow evaporation of the liquid residing within the pores to produce a high density solid nanocomposite, or by supercritical extraction to produce a lower density, high porous nanocomposite. Other ingredients may be added to this basic nanostructure to change physical and chemical properties, which include organic constituents for binders or gas generators during reactions, burn rate modifiers, or spectral emitters.

Tillotson, Thomas M. (Tracy, CA), Simpson; Randall L. (Livermore, CA); Hrubesh, Lawrence W. (Pleasanton, CA)

2006-01-17T23:59:59.000Z

98

Aerosol chemical vapor deposition of metal oxide films  

DOE Patents [OSTI]

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

Ott, K.C.; Kodas, T.T.

1994-01-11T23:59:59.000Z

99

Simple Way to Engineer Metal–Semiconductor Interface for Enhanced Performance of Perovskite Organic Lead Iodide Solar Cells  

Science Journals Connector (OSTI)

Simple Way to Engineer Metal–Semiconductor Interface for Enhanced Performance of Perovskite Organic Lead Iodide Solar Cells ... ‡ School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China ... However, ALD technique has the problems of strict working environment like vacuum and high cost precursors. ...

Yuzhuan Xu; Jiangjian Shi; Songtao Lv; Lifeng Zhu; Juan Dong; Huijue Wu; Yin Xiao; Yanhong Luo; Shirong Wang; Dongmei Li; Xianggao Li; Qingbo Meng

2014-04-01T23:59:59.000Z

100

Solar-driven electrochemically assisted semiconductor-catalyzed iodide ion oxidation. Enhanced efficiency by oxide mixtures  

Science Journals Connector (OSTI)

Oxidation of iodide ion from an air-saturated solution under natural sunlight (900±50 W m?2) on the surfaces of TiO2, ZnO, Fe2O3, MoO3 and CeO2 enhances by 6 to 12-fold on application of a cathodic bias of ?0.2 t...

Chockalingam Karunakaran; Premkumar Anilkumar

2009-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Sharp semiconductor-to-metal transition of VO{sub 2} thin films on glass substrates  

SciTech Connect (OSTI)

Outstanding phase transition properties of vanadium dioxide (VO{sub 2}) thin films on amorphous glass were achieved and compared with the ones grown on c-cut sapphire and Si (111) substrates, all by pulsed laser deposition. The films on glass substrate exhibit a sharp semiconductor-to-metal transition (?4.3?°C) at a near bulk transition temperature of ?68.4?°C with an electrical resistance change as high as 3.2?×?10{sup 3} times. The excellent phase transition properties of the films on glass substrate are correlated with the large grain size and low defects density achieved. The phase transition properties of VO{sub 2} films on c-cut sapphire and Si (111) substrates were found to be limited by the high defect density.

Jian, Jie; Chen, Aiping [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States); Zhang, Wenrui [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Wang, Haiyan, E-mail: wangh@ece.tamu.edu [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States); Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States)

2013-12-28T23:59:59.000Z

102

Metallic Materials in Solid Oxide Fuel Cells  

Science Journals Connector (OSTI)

Fe-Cr alloys with variations in chromium content and additions of different elements were studied for potential application in intermediate temperature Solid Oxide Fuel Cell (SOFC). Recently, a new type of FeC...

V. Shemet; J. Piron-Abellan; W.J. Quadakkers…

2005-01-01T23:59:59.000Z

103

Flame Synthesis of One-Dimensional Metal Oxide Nanomaterials  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Synthesis of One-Dimensional Metal Oxide Nanomaterials Synthesis of One-Dimensional Metal Oxide Nanomaterials Alexei V. Saveliev Dept. of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC 27695, USA Robust, scalable, and energy efficient methods of nanomaterial synthesis are needed to meet the demands of current and potential applications. Flames have been successfully applied for the synthesis of metal oxide and ceramic nanopowders largely composed of spherical particles and their aggregates. In recent years, premixed and diffusion flames have been employed for the synthesis of 1-D carbon nanoforms such as carbon fibers and carbon nanotubes. The extension of flame methods to gas phase and solid support synthesis of 1-D inorganic nanoforms is of great interest and significance. This talk presents

104

Temperature dependent junction capacitance-voltage characteristics of Ni embedded TiN/SiO{sub 2}/p-Si metal–insulator–semiconductor structure  

SciTech Connect (OSTI)

This work presents the junction capacitance–voltage characteristics of highly textured/epitaxial Ni nanoparticle embedded in TiN matrix (TiN(Ni)) metal-insulator-semiconductor TiN(Ni)/SiO{sub 2}/p-Si (100) heterojunction in the temperature range of 10–300?K. This heterojunction behaves as metal-semiconductor junction with unavoidable leakage through native oxide SiO{sub 2} layer. The clockwise hysteresis loop has been observed in the capacitance-voltage characteristics measured at various frequencies mainly due to presence of trap centers at the TiN(Ni)/SiO{sub 2} interface and these are temperature dependent. The spin-dependent trap charge effect at the interface influences the quadratic nature of the capacitance with magnetic field. The junction magnetocapacitance (JMC) is observed to be dependent on both temperature and frequency. The highest JMC of this heterojunction has been observed at 200?K at higher frequencies (100?kHz–1?MHz). It is found that there is not much effect of band structure modification under magnetic field causing the JMC.

Panda, J.; Nath, T. K., E-mail: tnath@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Chattopadhyay, S. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Amity Institute of Nano Technology, Amity University, Sector-125, Noida, Uttar Pradesh 201313 (India)

2013-12-14T23:59:59.000Z

105

Electron-Phonon Coupling and Thermal Conductance at a Metal-Semiconductor Interface: First-principles Analysis  

E-Print Network [OSTI]

The mechanism of heat transfer and the contribution of electron-phonon coupling to thermal conductance of a metal-semiconductor interface remains unclear in the present literature. We report ab initio simulations of a technologically important titanium silicide (metal) - silicon (semiconductor) interface to estimate the Schottky barrier height (SBH), and the strength of electron-phonon and phonon-phonon heat transfer across the interface. The electron and phonon dispersion relations of TiSi$_2$ with C49 structure and the TiSi$_2$-Si interface are obtained using first-principles calculations within the density functional theory (DFT) framework. These are used to estimate electron-phonon linewidths and the associated Eliashberg function that quantifies coupling. We show that the coupling strength of electrons with interfacial phonon modes is of the same order of magnitude as coupling of electrons to phonon modes in the bulk metal, and its contribution to electron-phonon interfacial conductance is comparable to ...

Sadasivam, Sridhar; Fisher, Timothy S

2015-01-01T23:59:59.000Z

106

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics  

SciTech Connect (OSTI)

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

Chu, L. K. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Merckling, C.; Dekoster, J.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Alian, A.; Heyns, M. [Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Hong, M. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2011-07-25T23:59:59.000Z

107

Metal current collect protected by oxide film  

DOE Patents [OSTI]

Provided are low-cost, mechanically strong, highly electronically conductive current collects and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical devices having as current interconnects a ferritic steel felt or screen coated with a protective oxide film.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); DeJonghe, Lutgard C. (Lafayette, CA)

2004-05-25T23:59:59.000Z

108

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof  

DOE Patents [OSTI]

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

2010-07-13T23:59:59.000Z

109

Nonprecious Metal Catalysts for Low Temperature Solid Oxide Fuel Cells  

Science Journals Connector (OSTI)

Nonprecious Metal Catalysts for Low Temperature Solid Oxide Fuel Cells ... Initial and final state geometries are found with standard geometry optimization, then a number of intermediate states are generated by interpolation of atomic positions. ... A special "metric" and a special "preconditioning" optimized for a plane-wave basis set will be introduced. ...

Timothy P. Holme; Fritz B. Prinz

2011-05-24T23:59:59.000Z

110

Metal complexes of substituted Gable porphyrins as oxidation catalysts  

DOE Patents [OSTI]

Transition metal complexes of Gable porphyrins having two porphyrin rings connected through a linking group, and having on the porphyrin rings electron-withdrawing groups, such as halogen, nitro or cyano. These complexes are useful as catalysts for the oxidation of organic compounds, e.g. alkanes.

Lyons, James E. (Wallingford, PA); Ellis, Jr., Paul E. (Downingtown, PA); Wagner, Richard W. (Murrysville, PA)

1996-01-01T23:59:59.000Z

111

Metal complexes of substituted Gable porphyrins as oxidation catalysts  

DOE Patents [OSTI]

Transition metal complexes of Gable porphyrins are disclosed having two porphyrin rings connected through a linking group, and having on the porphyrin rings electron-withdrawing groups, such as halogen, nitro or cyano. These complexes are useful as catalysts for the oxidation of organic compounds, e.g. alkanes.

Lyons, J.E.; Ellis, P.E. Jr.; Wagner, R.W.

1996-01-02T23:59:59.000Z

112

Metal Oxide Nanoparticles as Bactericidal Agents  

Science Journals Connector (OSTI)

8 Magnesium oxide prepared through an aerogel procedure (AP-MgO)9 yields square and polyhedral shaped nanoparticles with diameters varying slightly around 4 nm, arranged in an extensive porous structure with considerable pore volume. ... Approximately 106 CFU (colony forming units) of bacteria or spores were deposited on water filtration membranes with pore size 0.45 ?m (Millipore Corp.). ... The filters were dried at ambient conditions for 30 min and then completely covered with 0.25 g of AP-MgO/X2 (X = Cl, Br, none). ...

Peter K. Stoimenov; Rosalyn L. Klinger; George L. Marchin; Kenneth J. Klabunde

2002-07-04T23:59:59.000Z

113

Reduction of Metal Oxides by Microwave Heating of Multi-walled...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Reduction of Metal Oxides by Microwave Heating of Multi-walled Carbon Nanotubes Microwave heating of a metal oxide in the presence of multi-walled carbon nanotubes may result in...

114

Electrical excitation of colloidally synthesized quantum dots in metal oxide structures  

E-Print Network [OSTI]

This thesis develops methods for integrating colloidally synthesized quantum dots (QDs) and metal oxides in optoelectronic devices, presents three distinct light emitting devices (LEDs) with metal oxides surrounding a QD ...

Wood, Vanessa Claire

2010-01-01T23:59:59.000Z

115

Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices  

DOE Patents [OSTI]

A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

Horn, Kevin M.

2013-07-09T23:59:59.000Z

116

3D Assembly of Semiconductor and Metal Nanocrystals: Hybrid CdTe/Au Structures with Controlled Content  

Science Journals Connector (OSTI)

(3) Recently, attention was attracted by the possibility to create functional gels and aerogels via self-assembly of colloidal NCs(4) or clusters of metal chalcogenides,(5) which may open enormous opportunities for semiconductor technology, catalysis and photocatalysis, optoelectronics and photonics, sorbents and filters. ... A critical point drier (13200J-AB from Spi Supplies) was used for supercritical CO2 drying to prevent the fine nanostructures from collapsing and to obtain self-supporting aerogel monoliths. ...

Vladimir Lesnyak; André Wolf; Aliaksei Dubavik; Lars Borchardt; Sergei V. Voitekhovich; Nikolai Gaponik; Stefan Kaskel; Alexander Eychmüller

2011-07-21T23:59:59.000Z

117

The roadmap for downscaling and introducing new technologies in the semiconductor industry is well laid out for the next ten years2.  

E-Print Network [OSTI]

The roadmap for downscaling and introducing new technologies in the semiconductor industry is well in the International Technology Roadmap for Semiconductors, one- dimensional structures, such as carbon nanotubes an impact on future post-complementary metal- oxide-semiconductor (CMOS) technology depends on more factors

118

Cyclic catalytic upgrading of chemical species using metal oxide materials  

DOE Patents [OSTI]

Processes are disclosure which comprise alternately contacting an oxygen-carrying catalyst with a reducing substance, or a lower partial pressure of an oxidizing gas, and then with the oxidizing gas or a higher partial pressure of the oxidizing gas, whereby the catalyst is alternately reduced and then regenerated to an oxygenated state. In certain embodiments, the oxygen-carrying catalyst comprises at least one metal oxide-containing material containing a composition having the following formulas: (a) Ce.sub.xB.sub.yB'.sub.zB''O.sub..delta., wherein B=Ba, Sr, Ca, or Zr; B'=Mn, Co, and/or Fe; B''=Cu; 0.01metal oxides.

White, James H; Schutte, Erick J; Rolfe, Sara L

2013-05-07T23:59:59.000Z

119

Influence of uranium hydride oxidation on uranium metal behaviour  

SciTech Connect (OSTI)

This work addresses concerns that the rapid, exothermic oxidation of active uranium hydride in air could stimulate an exothermic reaction (burning) involving any adjacent uranium metal, so as to increase the potential hazard arising from a hydride reaction. The effect of the thermal reaction of active uranium hydride, especially in contact with uranium metal, does not increase in proportion with hydride mass, particularly when considering large quantities of hydride. Whether uranium metal continues to burn in the long term is a function of the uranium metal and its surroundings. The source of the initial heat input to the uranium, if sufficient to cause ignition, is not important. Sustained burning of uranium requires the rate of heat generation to be sufficient to offset the total rate of heat loss so as to maintain an elevated temperature. For dense uranium, this is very difficult to achieve in naturally occurring circumstances. Areas of the uranium surface can lose heat but not generate heat. Heat can be lost by conduction, through contact with other materials, and by convection and radiation, e.g. from areas where the uranium surface is covered with a layer of oxidised material, such as burned-out hydride or from fuel cladding. These rates of heat loss are highly significant in relation to the rate of heat generation by sustained oxidation of uranium in air. Finite volume modelling has been used to examine the behaviour of a magnesium-clad uranium metal fuel element within a bottle surrounded by other un-bottled fuel elements. In the event that the bottle is breached, suddenly, in air, it can be concluded that the bulk uranium metal oxidation reaction will not reach a self-sustaining level and the mass of uranium oxidised will likely to be small in relation to mass of uranium hydride oxidised. (authors)

Patel, N.; Hambley, D. [National Nuclear Laboratory (United Kingdom); Clarke, S.A. [Sellafield Ltd (United Kingdom); Simpson, K.

2013-07-01T23:59:59.000Z

120

Preparation and evaluation of novel hydrous metal oxide (HMO)-supported noble metal catalysts  

SciTech Connect (OSTI)

Hydrous Metal Oxides (HMOs) are chemically synthesized materials that, because of their high cation exchange capacity, possess a unique ability to allow the preparation of highly dispersed supported-metal catalyst precursors with high metal loadings. This study evaluates high weight loading Rh/HMO catalysts with a wide range of HMO support compositions, including hydrous titanium oxide (HTO), silica-doped hydrous titanium oxide (HTO:Si), hydrous zirconium oxide (HZO), and silica-doped hydrous zirconium oxide (HZO:Si), against conventional oxide-supported Rh catalysts with similar weight loadings and support chemistries. Catalyst activity measurements for a structure-sensitive model reaction (n-butane hydrogenolysis) as a function of catalyst activation conditions show superior activity and stability for the ZrO{sub 2}, HZO, and HZO:Si supports, although all of the Rh/HMO catalysts have high ethane selectivity indicative of high Rh dispersion. For the TiO{sub 2}-, HTO-, and HTO:Si supported Rh catalysts, a significant loss of both catalyst activity and Rh dispersion is observed at more aggressive activation conditions, consistent with TiO{sub x} migration associated with SMSI phenomena. Of all the Rh/HMO catalysts, the Rh/HZO:Si catalysts appear to offer the best tradeoff in terms of high Rh dispersion, high activity, and high selectivity.

Gardner, T.J.; McLaughlin, L.I.; Evans, L.R. [Sandia National Labs., Albuquerque, NM (United States). Catalysis and Chemical Technologies Dept.; Datye, A.K. [Univ. of New Mexico, Albuquerque, NM (United States)

1998-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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121

Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials  

E-Print Network [OSTI]

electron storage, electrochromic, and photoelectrochromicV. Thin Solid Films Electrochromic and photoelectrochemical

Wheeler, Damon Andreas

2013-01-01T23:59:59.000Z

122

Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials  

E-Print Network [OSTI]

cancer treatment, sensors, lasers, and solar cells. Onedetectors, solar energy conversion, sensors, and manydetectors, solar energy conversion, lasers, and sensors. A

Wheeler, Damon Andreas

2013-01-01T23:59:59.000Z

123

Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials  

E-Print Network [OSTI]

S. R. ; Cowan, A. J. ; Barroso, M. ; Sivula, K. ; Ye, J. ;3861. (167) Pendlebury, S. R. ; Barroso, M. ; Cowan, A. J. ;+. (199) Pendlebury, S. ; Barroso, M. ; Cowan, A. ; Sivula,

Wheeler, Damon Andreas

2013-01-01T23:59:59.000Z

124

Strengthening of metallic alloys with nanometer-size oxide dispersions  

DOE Patents [OSTI]

Austenitic stainless steels and nickel-base alloys containing, by wt. %, 0.1 to 3.0% V, 0.01 to 0.08% C, 0.01 to 0.5% N, 0.05% max. each of Al and Ti, and 0.005 to 0.10% O, are strengthened and ductility retained by atomization of a metal melt under cover of an inert gas with added oxygen to form approximately 8 nanometer-size hollow oxides within the alloy grains and, when the alloy is aged, strengthened by precipitation of carbides and nitrides nucleated by the hollow oxides. Added strengthening is achieved by nitrogen solid solution strengthening and by the effect of solid oxides precipitated along and pinning grain boundaries to provide temperature-stabilization and refinement of the alloy grains.

Flinn, John E. (Idaho Falls, ID); Kelly, Thomas F. (Madison, WI)

1999-01-01T23:59:59.000Z

125

Strengthening of metallic alloys with nanometer-size oxide dispersions  

DOE Patents [OSTI]

Austenitic stainless steels and nickel-base alloys containing, by wt. %, 0.1 to 3.0% V, 0.01 to 0.08% C, 0.01 to 0.5% N, 0.05% max. each of Al and Ti, and 0.005 to 0.10% O, are strengthened and ductility retained by atomization of a metal melt under cover of an inert gas with added oxygen to form approximately 8 nanometer-size hollow oxides within the alloy grains and, when the alloy is aged, strengthened by precipitation of carbides and nitrides nucleated by the hollow oxides. Added strengthening is achieved by nitrogen solid solution strengthening and by the effect of solid oxides precipitated along and pinning grain boundaries to provide temperature-stabilization and refinement of the alloy grains. 20 figs.

Flinn, J.E.; Kelly, T.F.

1999-06-01T23:59:59.000Z

126

Lithium Metal Oxide Electrodes For Lithium Cells And Batteries  

DOE Patents [OSTI]

A lithium metal oxide positive electrode for a non-aqueous lithium cell is disclosed. The cell is prepared in its initial discharged state and has a general formula xLiMO.sub.2.(1-x)Li.sub.2 M'O.sub.3 in which 0oxidation state and with at least one ion being Mn or Ni, and where M' is one or more ion with an average tetravalent oxidation state. Complete cells or batteries are disclosed with anode, cathode and electrolyte as are batteries of several cells connected in parallel or series or both.

Thackeray, Michael M. (Naperville, IL); Johnson, Christopher S. (Naperville, IL); Amine, Khalil (Downers Grove, IL); Kim, Jaekook (Naperville, IL)

2004-01-20T23:59:59.000Z

127

Lithium metal oxide electrodes for lithium cells and batteries  

DOE Patents [OSTI]

A lithium metal oxide positive electrode for a non-aqueous lithium cell is disclosed. The cell is prepared in its initial discharged state and has a general formula xLiMO.sub.2.(1-x)Li.sub.2M'O.sub.3 in which 0oxidation state and with at least one ion being Mn or Ni, and where M' is one or more ion with an average tetravalent oxidation state. Complete cells or batteries are disclosed with anode, cathode and electrolyte as are batteries of several cells connected in parallel or series or both.

Thackeray, Michael M. (Naperville, IL); Johnson, Christopher S. (Naperville, IL); Amine, Khalil (Oakbrook, IL)

2008-12-23T23:59:59.000Z

128

Mechanistic Studies of Charge Injection from Metallic Electrodes into Organic Semiconductors Mediated by Ionic Functionalities: Final Report  

SciTech Connect (OSTI)

Metal-organic semiconductor interfaces are important because of their ubiquitous role in determining the performance of modern electronics such as organic light emitting diodes (OLEDs), fuel cells, batteries, field effect transistors (FETs), and organic solar cells. Interfaces between metal electrodes required for external wiring to the device and underlying organic structures directly affect the charge carrier injection/collection efficiency in organic-based electronic devices primarily due to the mismatch between energy levels in the metal and organic semiconductor. Environmentally stable and cost-effective electrode materials, such as aluminum and gold typically exhibit high potential barriers for charge carriers injection into organic devices leading to increased operational voltages in OLEDs and FETs and reduced charge extraction in photovoltaic devices. This leads to increased power consumption by the device, reduced overall efficiency, and decreased operational lifetime. These factors represent a significant obstacle for development of next generation of cheap and energy-efficient components based on organic semiconductors. It has been noticed that introduction of organic materials with conjugated backbone and ionic pendant groups known as conjugated poly- and oligoelectrolytes (CPEs and COEs), enables one to reduce the potential barriers at the metal-organic interface and achieve more efficient operation of a device, however exact mechanisms of the phenomenon have not been understood. The goal of this project was to delineate the function of organic semiconductors with ionic groups as electron injection layers. The research incorporated a multidisciplinary approach that encompassed the creation of new materials, novel processing techniques, examination of fundamental electronic properties and the incorporation of the resulting knowledgebase into development of novel organic electronic devices with increased efficiency, environmental stability, and reduced cost. During the execution of the project, main efforts were focused on the synthesis of new charge-bearing organic materials, such as CPEs and COEs, and block copolymers with neutral and ionic segments, studies of mechanisms responsible for the charge injection modulation in devices with ionic interlayers, and use of naturally occurring charged molecules for creation of enhanced devices. The studies allowed PIs to demonstrate the usefulness of the proposed approach for the improvement of operational parameters in model OLED and FET systems resulting in increased efficiency, decreased contact resistance, and possibility to use stable metals for fabrication of device electrodes. The successful proof-of-the-principle results potentially promise development of light-weight, low fabrication cost devices which can be used in consumer applications such as displays, solar cells, and printed electronic devices. Fundamental mechanisms responsible for the phenomena observed have been identified thus advancing the fundamental knowledgebase.

Nguyen, Thuc-Quyen [UCSB; Bazan, Guillermo [UCSB; Mikhailovsky, Alexander [UCSB

2014-04-15T23:59:59.000Z

129

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution  

Science Journals Connector (OSTI)

Exotic features of a metal/oxide/metal sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwich exhibits a resistance that reversibly switches between two states: one is a highly resistive off state and the other is a conductive on state. Several distinct features were universally observed in these binary TMO sandwiches: namely, nonpolar switching, nonvolatile threshold switching, and current-voltage duality. From the systematic sample-size dependence of the resistance in on and off states, we conclude that the resistance switching is due to the formation of “electric faucet” at the interface, which shows up as a homogeneous to inhomogeneous transition of the current distribution.

I. H. Inoue; S. Yasuda; H. Akinaga; H. Takagi

2008-01-03T23:59:59.000Z

130

Transition metal oxides deposited on rhodium and platinum: Surface chemistry and catalysis  

SciTech Connect (OSTI)

The surface chemistry and catalytic reactivity of transition metal oxides deposited on Rh and Pt substrates has been examined in order to establish the role of oxide-metal interactions in influencing catalytic activity. The oxides investigated included titanium oxide (TiOx), vanadium oxide (VOx), iron oxide (FeOx), zirconium oxide (ZrOx), niobium oxide (NbOx), tantalum oxide (TaOx), and tungsten oxide (WOx). The techniques used to characterize the sample included AES, XPS, LEED, TPD, ISS, and STM. After characterization of the surface in UHV, the sample was enclosed in an atmospheric reaction cell to measure the influence of the oxide deposits on the catalytic activity of the pure metal for CO and CO{sub 2} hydrogenation. The oxide deposits were found to strongly enhance the reactivity of the Rh foil. The rates of methane formation were promoted by up to 15 fold with the maximum in rate enhancement occurring at oxide coverages of approximately 0.5 ML. TiOx TaOx, and NbOx were the most effective promoters and were stable in the highest oxidation states during both reactions (compared to VOx, WOx, and FeOx). The trend in promoter effectiveness was attributed to the direct relationship between oxidation state and Lewis acidity. Bonding at the metal oxide/metal interface between the oxygen end of adsorbed CO and the Lewis acidic oxide was postulated to facilitate C-O bond dissociation and subsequent hydrogenation. 192 refs.

Boffa, A.B. [Univ. of California, Berkeley, CA (United States). Dept. of Chemistry; [Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1994-07-01T23:59:59.000Z

131

Magnetic preferential orientation of metal oxide superconducting materials  

DOE Patents [OSTI]

A superconductor comprised of a polycrystalline metal oxide such as YBa[sub 2]Cu[sub 3]O[sub 7[minus]X] (where 0 < X < 0.5) exhibits superconducting properties and is capable of conducting very large current densities. By aligning the two-dimensional Cu-O layers which carry the current in the superconducting state in the a- and b-directions, i.e., within the basal plane, a high degree of crystalline axes alignment is provided between adjacent grains permitting the conduction of high current densities. The highly anisotropic diamagnetic susceptibility of the polycrystalline metal oxide material permits the use of an applied magnetic field to orient the individual crystals when in the superconducting state to substantially increase current transport between adjacent grains. In another embodiment, the anisotropic paramagnetic susceptibility of rare-earth ions substituted into the oxide material is made use of as an applied magnetic field orients the particles in a preferential direction. This latter operation can be performed with the material in the normal (non-superconducting) state. 4 figs.

Capone, D.W.; Dunlap, B.D.; Veal, B.W.

1990-07-17T23:59:59.000Z

132

Magnetic preferential orientation of metal oxide superconducting materials  

DOE Patents [OSTI]

A superconductor comprised of a polycrystalline metal oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-X (where 0metal oxide material permits the use of an applied magnetic field to orient the individual crystals when in the superconducting state to substantially increase current transport between adjacent grains. In another embodiment, the anisotropic paramagnetic susceptibility of rare-earth ions substituted into the oxide material is made use of as an applied magnetic field orients the particles in a preferential direction. This latter operation can be performed with the material in the normal (non-superconducting) state.

Capone, Donald W. (Bolingbrook, IL); Dunlap, Bobby D. (Bolingbrook, IL); Veal, Boyd W. (Downers Grove, IL)

1990-01-01T23:59:59.000Z

133

Electrodepositionof Metal Alloyand Mixed Oxide Films Usinga Single-PrecursorTetranuclearCopper-NickelComplex  

E-Print Network [OSTI]

Compositionally uniform mixed metals, metal oxides, and alloys are used extensively as corrosion protective and catalysts. I-~For example, nickel-containing oxides and alloys are used for oxidative protection of very. Although Cu-Ni alloy deposition has been stud- ied for many years, none of the previous approaches has led

Kounaves, Samuel P.

134

Cyclic catalytic upgrading of chemical species using metal oxide materials  

DOE Patents [OSTI]

Processes are disclosure which comprise alternately contacting an oxygen-carrying catalyst with a reducing substance, or a lower partial pressure of an oxidizing gas, and then with the oxidizing gas or a higher partial pressure of the oxidizing gas, whereby the catalyst is alternately reduced and then regenerated to an oxygenated state. In certain embodiments, the oxygen-carrying catalyst comprises at least one metal oxide-containing material containing a composition having one of the following formulas: (a) Ce.sub.xB.sub.yB'.sub.zB''O.sub..delta., wherein B=Ba, Sr, Ca, or Zr; B'=Mn, Co, or Fe; B''=Cu; 0.01

White, James H. (Boulder, CO); Schutte, Erick J. (Thornton, CO); Rolfe, Sara L. (Loveland, CO)

2010-11-02T23:59:59.000Z

135

Lithium metal oxide electrodes for lithium cells and batteries  

DOE Patents [OSTI]

A lithium metal oxide positive electrode for a non-aqueous lithium cell is disclosed. The cell is prepared in its initial discharged state and has a general formula xLiMO.sub.2.(1-x)Li.sub.2 M'O.sub.3 in which 0

Thackeray, Michael M. (Naperville, IL); Johnson, Christopher S. (Naperville, IL); Amine, Khalil (Downers Grove, IL); Kim, Jaekook (Naperville, IL)

2004-01-13T23:59:59.000Z

136

E-Print Network 3.0 - alkaline-earth metal oxides Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

differ in the nature of the angle... ). Weidner and Hamaya (1983) observed that the transition-metal oxides and the alkaline-earth oxides fail... ... Source: Price, G. David -...

137

Development of metallic substrate supported planar solid oxide fuel cells fabricated by atmospheric plasma spraying  

Science Journals Connector (OSTI)

A planar solid oxide fuel cell (SOFC) consisting of a cell supported with a porous metallic substrate and a metallic separator has been developed. In the fabrication of the cell, anodes and electrolytes were form...

Shunji Takenoiri; Naruaki Kadokawa; Kazuo Koseki

2000-09-01T23:59:59.000Z

138

Bipolar plating of metal contacts onto oxide interconnection for solid oxide electrochemical cell  

DOE Patents [OSTI]

Disclosed is a method of forming an adherent metal deposit on a conducting layer of a tube sealed at one end. The tube is immersed with the sealed end down into an aqueous solution containing ions of the metal to be deposited. An ionically conducting aqueous fluid is placed inside the tube and a direct current is passed from a cathode inside the tube to an anode outside the tube. Also disclosed is a multi-layered solid oxide fuel cell tube which consists of an inner porous ceramic support tube, a porous air electrode covering the support tube, a non-porous electrolyte covering a portion of the air electrode, a non-porous conducting interconnection covering the remaining portion of the electrode, and a metal deposit on the interconnection.

Isenberg, Arnold O. (Forest Hills Boro, PA)

1987-01-01T23:59:59.000Z

139

High-throughput synthesis and characterization of vanadium mixed metal oxide pigments using synchroton radiation.  

E-Print Network [OSTI]

??UNA range of inorganic vanadium mixed metal oxides, with potential applications as inorganic pigments, have been synthesised and characterised in terms of their crystal structure,… (more)

Russu, Sergio

2008-01-01T23:59:59.000Z

140

Project Profile: Thermochemical Heat Storage for CSP Based on Multivalent Metal Oxides  

Broader source: Energy.gov [DOE]

General Atomics (GA), under the Thermal Storage FOA, is developing a high-density thermochemical heat storage system based on solid metal oxides.

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Synergistic Metal–Metal Oxide Nanoparticles Supported Electrocatalytic Graphene for Improved Photoelectrochemical Glucose Oxidation  

Science Journals Connector (OSTI)

Panels a and b in Figure 1 depict the schematic representation of mechanism of glucose oxidation at the graphene–WO3–Au hybrid membrane modified with glucose oxidase (GOD) enzyme. ... The efficiency improvement seems to be due to (1) the enhancement of electron transport through the TiO2 layer by inter-particle necking of primary TiO2 particles and (2) an increase in the recombination resistance at TiO2/QD/electrolyte interfaces by healing the surface states or managing the oxygen vacancies upon N-ion doping. ...

Anitha Devadoss; P. Sudhagar; Santanu Das; Sang Yun Lee; C. Terashima; K. Nakata; A. Fujishima; Wonbong Choi; Yong Soo Kang; Ungyu Paik

2014-03-09T23:59:59.000Z

142

Enrichment of Fe and Ni at metal and oxide grain boundaries in corroded Zircaloy-2  

Science Journals Connector (OSTI)

Atom probe tomography has been used to study for the first time the metal–oxide interface region in Zircaloy-2. Segregation of Fe and Ni to both deformation-induced sub-grain boundaries in the metal and planar features in the oxide has been found. Apparently, the oxide inherits the chemistry of the sub-grain boundaries as the material oxidizes, which may have implications for the waterside corrosion kinetics of the alloy.

G. Sundell; M. Thuvander; H.-O. Andrén

2012-01-01T23:59:59.000Z

143

Total oxidation of carbon monoxide and methane over transition metal-fluorite oxide composite catalysts. I. Catalyst composition and activity  

SciTech Connect (OSTI)

A novel metal oxide composite catalyst for the total oxidation of carbon monoxide and methane was prepared by combining fluorite oxides with active transition metals. The fluorite oxides, such as ceria and zirconia, are oxygen-ion-conducting materials having catalytic properties usually at high temperatures. Active base metal catalysts, such as copper, were used as additives to promote the catalytic properties of these oxides. The contact of the two types of materials gave rise to a high active oxidation catalyst. At a space velocity of about 42,000 h{sup {minus}1}, complete carbon monoxide oxidation in air occurred at room temperature on the Au{sub 0.05}[Ce(La)]{sub 0.95}L{sub x} catalyst and at ca. 100{degrees}C on Cu-Ce-O composite catalysts. At the same space velocity, total oxidation of methane on the Cu-Ce-O catalyst doped with La{sub 2}O{sub 3} or SrO took place at ca. 550{degrees}C. The specific carbon monoxide oxidation activity of the Cu-Ce-O catalyst was several orders of magnitude higher than that of conventional copper-based catalysts and comparable or superior to platinum catalysts. This type of composite catalyst also showed excellent resistance to water vapor poisoning. The enhanced catalyst activity and stability resulted from strong interaction of the transition metal and fluorite oxide materials. 44 refs., 14 figs., 5 tabs.

Liu, W.; Flytzani-Stephanopoulos, F. [Tufts Univ., Medford, MA (United States)] [Tufts Univ., Medford, MA (United States)

1995-05-01T23:59:59.000Z

144

Metal silicide nanoelectromechanical relays for low power applications.  

E-Print Network [OSTI]

??ABSTRACT Scaling down the metal-oxide-semiconductor field effect transistor (MOSFET) has continuously brought lower cost, higher density and increased performance since the 1960s. However, as MOS… (more)

Stanford University, Dept. of Electrical; Engineering

2014-01-01T23:59:59.000Z

145

Studies on supported metal oxide-oxide support interactions (an incorporation model)  

SciTech Connect (OSTI)

XRD, XPS, SSIMS, LRS, and FT-IR are used to explore the valency, composition and structure of the dispersed metal oxide species on supports with different structures, i.e., on ceria and {gamma}-alumina. The results indicated that the dispersion of various ionic compounds are proceeded by the incorporation of the metal cations into the surface vacant sites on the support provided that the loading amounts of the compounds are not higher than their dispersion capacities. The key factors determining the dispersion capacities of the ionic compounds are: (1) the surface structure of the support which determines the size and number of the vacant sites available. (2) the valency of the dispersed ionic compound and the size of the anion, from which the shielding effect of the capping anion(s) can be evaluated, and (3) the sizes of the dispersed cations and the vacant sites on the surface, from which the sites can be used for incorporation can be identified. The Quantitative results deduced from the incorporation model and from the independent experiments are consistent, providing further evidence that the model captures the essentials of the interactions between the dispersed metal oxide and support.

Yi Chen; Lin Dong; Y.S. Jin; Bing Xu; Weijie Ji [Nanjing Univ. (China)

1996-12-31T23:59:59.000Z

146

Oxidation catalysts comprising metal exchanged hexaaluminate wherein the metal is Sr, Pd, La, and/or Mn  

DOE Patents [OSTI]

The present invention provides metal-exchanged hexaaluminate catalysts that exhibit good catalytic activity and/or stability at high temperatures for extended periods with retention of activity as combustion catalysts, and more generally as oxidation catalysts, that make them eminently suitable for use in methane combustion, particularly for use in natural gas fired gas turbines. The hexaaluminate catalysts of this invention are of particular interest for methane combustion processes for minimization of the generation of undesired levels (less than about 10 ppm) of NOx species. Metal exchanged hexaaluminate oxidation catalysts are also useful for oxidation of volatile organic compounds (VOC), particularly hydrocarbons. Metal exchanged hexaaluminate oxidation catalysts are further useful for partial oxidation, particularly at high temperatures, of reduced species, particularly hydrocarbons (alkanes and alkenes).

Wickham, David (Boulder, CO); Cook, Ronald (Lakewood, CO)

2008-10-28T23:59:59.000Z

147

Self assembled multi-layer nanocomposite of graphene and metal oxide materials  

DOE Patents [OSTI]

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2013-10-22T23:59:59.000Z

148

Self assembled multi-layer nanocomposite of graphene and metal oxide materials  

SciTech Connect (OSTI)

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Liu, Jun; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2014-09-16T23:59:59.000Z

149

Development of a Plasma Arc Manufacturing Process and Machine to Create Metal Oxide Particles in Water From Wire Feedstock.  

E-Print Network [OSTI]

??A plasma arc erosion process can be used to create metal and metal oxide particles in the ultra-fine size range (<70 um). An electric arc… (more)

George, Jonathan Alan 1983-

2010-01-01T23:59:59.000Z

150

Stabilization of Electrocatalytic Metal Nanoparticles at Metal...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electrocatalytic Metal Nanoparticles at Metal-Metal Oxide-Graphene Triple Junction Points. Stabilization of Electrocatalytic Metal Nanoparticles at Metal-Metal Oxide-Graphene...

151

Superconductors and Complex Transition Metal Oxides for Tunable THz Plasmonic Metamaterials  

SciTech Connect (OSTI)

The outline of this presentation are: (1) Motivation - Non-tunability of metal metamaterials; (2) Superconductors for temperature tunable metamaterials; (3) Ultrafast optical switching in superconductor metamaterials; (4) Controlling the conductivity with infrared pump beam; (5) Complex metal oxides as active substrates - Strontium Titanate; and (6) Conclusion. Conclusions are: (1) High Tc superconductors good for tunable and ultrafast metamaterials; (2) Large frequency and amplitude tunability in ultrathin superconductor films; (3) Such tunable properties cannot be accessed using metals; (4) Complex metal oxides can be used as active substrates - large tunability; (5) Complex oxides fail to address the issue of radiation losses in THz metamaterials.

Singh, Ranjan [Los Alamos National Laboratory; Xiong, Jie [Los Alamos National Laboratory; Azad, Md A. [Los Alamos National Laboratory; Yang, Hao [Los Alamos National Laboratory; Trugman, Stuart A. [Los Alamos National Laboratory; Jia, Quanxi [Los Alamos National Laboratory; Taylor, Antoinette [Los Alamos National Laboratory; Chen, Houtong [Los Alamos National Laboratory

2012-07-13T23:59:59.000Z

152

Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors  

SciTech Connect (OSTI)

Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

Han, Jaeheon [Department of Electronic Engineering, Kangnam University, 111 Gugal-dong, Giheung-gu, Yongin-city, Gyeonggi-do, Korea 446-702 (Korea, Republic of)

2011-12-23T23:59:59.000Z

153

Optical properties of metallic (III, Mn)V ferromagnetic semiconductors in the infrared to visible range  

E-Print Network [OSTI]

, Texas 77843-4242, USA 2Institute of Physics, ASCR, Cukrovarnick? 10, 162 53 Praha 6, Czech Republic 3Department of Physics, University of Texas, Austin, Texas 78712-0264, USA 4Institute of Physics, Polish Academy of Sciences, al. Lotnik?w 32/46, PL-02... of ferromagnetic semiconductors based on (III, Mn)V materials.1?4 These materials have been the focus of intensive research over the recent years after nonequilibrium growth procedures5,6 have demonstrated the ability to achieve a ferromagnetic phase...

Hankiewicz, EM; Jungwirth, T.; Dietl, T.; Timm, C.; Sinova, Jairo.

2004-01-01T23:59:59.000Z

154

Copper-induced oxidative stress in three-spined stickleback : relationship with hepatic metal levels  

E-Print Network [OSTI]

contamination of aquatic ecosystems by heavy metals. Among them, copper is a widespread pollutant found, 1999). Although this metal is a required element, high concentrations appear to be toxic to freshwater1 Copper-induced oxidative stress in three-spined stickleback : relationship with hepatic metal

Paris-Sud XI, Université de

155

Regenerable MgO promoted metal oxide oxygen carriers for chemical looping combustion  

DOE Patents [OSTI]

The disclosure provides an oxygen carrier comprised of a plurality of metal oxide particles in contact with a plurality of MgO promoter particles. The MgO promoter particles increase the reaction rate and oxygen utilization of the metal oxide when contacting with a gaseous hydrocarbon at a temperature greater than about 725.degree. C. The promoted oxide solid is generally comprised of less than about 25 wt. % MgO, and may be prepared by physical mixing, incipient wetness impregnation, or other methods known in the art. The oxygen carrier exhibits a crystalline structure of the metal oxide and a crystalline structure of MgO under XRD crystallography, and retains these crystalline structures over subsequent redox cycles. In an embodiment, the metal oxide is Fe.sub.2O.sub.3, and the gaseous hydrocarbon is comprised of methane.

Siriwardane, Ranjani V.; Miller, Duane D.

2014-08-19T23:59:59.000Z

156

Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium  

SciTech Connect (OSTI)

Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460?K for Zn{sub 0.97}Al{sub 0.03}O, 463?K for Zn{sub 0.94}Al{sub 0.03}Li{sub 0.03}O, and 503?K for Zn{sub 0.91}Al{sub 0.03}Li{sub 0.03}Mn{sub 0.03}O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.

Sivagamasundari, A.; Chandrasekar, S.; Pugaze, R.; Kannan, R., E-mail: kannan@pec.edu [Department of Physics, Pondicherry Engineering College, Puducherry 605 014 (India); Rajagopan, S. [Department of Chemistry, Pondicherry Engineering College, Puducherry 605 014 (India)

2014-03-07T23:59:59.000Z

157

Low temperature production of large-grain polycrystalline semiconductors  

DOE Patents [OSTI]

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Naseem, Hameed A. (Fayetteville, AR); Albarghouti, Marwan (Loudonville, NY)

2007-04-10T23:59:59.000Z

158

Reactivity of biogenic manganese oxide for metal sequestration and photochemistry: Computational solid state physics study  

SciTech Connect (OSTI)

Many microbes, including both bacteria and fungi, produce manganese (Mn) oxides by oxidizing soluble Mn(II) to form insoluble Mn(IV) oxide minerals, a kinetically much faster process than abiotic oxidation. These biogenic Mn oxides drive the Mn cycle, coupling it with diverse biogeochemical cycles and determining the bioavailability of environmental contaminants, mainly through strong adsorption and redox reactions. This mini review introduces recent findings based on quantum mechanical density functional theory that reveal the detailed mechanisms of toxic metal adsorption at Mn oxide surfaces and the remarkable role of Mn vacancies in the photochemistry of these minerals.

Kwon, K.D.; Sposito, G.

2010-02-01T23:59:59.000Z

159

Oxidative Dissolution of Nickel Metal in Hydrogenated Hydrothermal Solutions  

SciTech Connect (OSTI)

A platinum-lined, flowing autoclave facility is used to investigate the solubility behavior of metallic nickel in hydrogenated ammonia and sodium hydroxide solutions between 175 and 315 C. The solubility measurements were interpreted by means of an oxidative dissolution reaction followed by a sequence of Ni(II) ion hydrolysis reactions: Ni(s) + 2H+(aq) = Ni2+(aq) + H2(g) and Ni{sup 2+}(aq) + nH{sub 2}O = Ni(OH){sub n}{sup 2-n}(aq) + nH{sup +}(aq) where n = 1 and 2. Gibbs energies associated with these reaction equilibria were determined from a least-squares analysis of the data. The extracted thermochemical properties ({Delta}fG{sup 0}, {Delta}fH{sup 0} and S{sup 0}) for Ni2{sup +}(aq), Ni(OH){sup +}(aq) and Ni(OH){sub 2}(aq) were found to be consistent with those determined in a previous solubility study of NiO/Ni(OH){sub 2} conducted in our laboratory. The thermodynamic basis of the Ni/NiO phase boundary in aqueous solutions is examined to show that Ni(s) is stable relative to NiO(s) in solutions saturated at 25 C with 1 atm H{sub 2} for temperatures below 309 C.

Ziemniak SE, Guilmette PA, Turcotte RA, Tunison HM

2007-03-27T23:59:59.000Z

160

Oxide-based method of making compound semiconductor films and making related electronic devices  

DOE Patents [OSTI]

A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The oxide-containing particles may include a dopant, as may the compound film. Compound films including a Group IIB-IVA-VA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

Kapur, Vijay K. (Tarzana, CA); Basol, Bulent M. (Manhattan Beach, CA); Leidholm, Craig R. (Woodland Hills, CA); Roe, Robert A. (Glendale, CA)

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon.  

SciTech Connect (OSTI)

Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors.

Chu, Y.; Nagy, Z.; Parkhutik, V.; You, H.

1999-07-21T23:59:59.000Z

162

Alkane oxidation with porphyrins and metal complexes thereof having haloalkyl side chains  

DOE Patents [OSTI]

Transition metal complexes of meso-haloalkylporphyrins are disclosed, wherein the haloalkyl groups contain 2 to 8 carbon atoms have been found to be highly effective catalysts for oxidation of alkanes and for the decomposition of hydroperoxides. 7 figs.

Wijesekera, T.; Lyons, J.E.; Ellis, P.E. Jr.; Bhinde, M.V.

1998-06-23T23:59:59.000Z

163

Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films  

E-Print Network [OSTI]

We demonstrate a near-infrared photodetector that consists of a thin film of the J-aggregating cyanine dye, U3, and transparent metal-oxide charge transport layers. The high absorption coefficient of the U3 film, combined ...

Osedach, Timothy P.

164

Alkane oxidation with porphyrins and metal complexes thereof having haloalkyl side chains  

DOE Patents [OSTI]

Transition metal complexes of meso-haloalkylporphyrins, wherein the haloalkyl groups contain 2 to 8 carbon atoms have been found to be highly effective catalysts for oxidation of alkanes and for the decomposition of hydroperoxides.

Wijesekera, Tilak (Glen Mills, PA); Lyons, James E. (Wallingford, PA); Ellis, Jr., Paul E. (Downingtown, PA); Bhinde, Manoj V. (Boothwyn, PA)

1998-01-01T23:59:59.000Z

165

Emerging Applications of Liquid Metals Featuring Surface Oxides  

Science Journals Connector (OSTI)

Figure 4. 3D printing of free-standing liquid metal structures. ... Ladd, C.; So, J.-H.; Muth, J.; Dickey, M. D.3D Printing of Free Standing Liquid Metal Microstructures Adv. ... 3D Printing of Free Standing Liquid Metal Microstructures ...

Michael D. Dickey

2014-10-06T23:59:59.000Z

166

Characterization of metal oxide layers grown on CVD graphene  

SciTech Connect (OSTI)

Growth of a fully oxidized aluminum oxide layer with low surface roughness on graphene grown by chemical vapor deposition is demonstrated. This is accomplished by the deposition of a 0.2 nm thick titanium seed layer on the graphene prior to the deposition of the aluminum under ultra high vacuum conditions, which was subsequently oxidized. The stoichiometry and surface roughness of the oxide layers were measured for a range of titanium and aluminum depositions utilizing ex situ x-ray photoelectron spectrometry and atomic force microscopy. These fully oxidized films are expected to produce good dielectric layers for use in graphene based electronic devices.

Matsubayashi, Akitomo; Abel, Joseph; Prasad Sinha, Dhiraj; Lee, Ji Ung; LaBella, Vincent P. [College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203 (United States)

2013-03-15T23:59:59.000Z

167

Thermal resistance of contact with oxidized metal surfaces  

Science Journals Connector (OSTI)

A model of an elementary heat channel is analyzed which simulates the ... is derived which describes the increment of contact resistance due to the presence of an oxide...

V. M. Popov; A. I. Krasnoborod'ko

1973-10-01T23:59:59.000Z

168

Plasmonic transparent conducting metal oxide nanoparticles and films for optical sensing applications  

DOE Patents [OSTI]

The disclosure relates to a method of detecting a change in a chemical composition by contacting a doped oxide material with a monitored stream, illuminating the doped oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The doped metal oxide has a carrier concentration of at least 10.sup.18/cm.sup.3, a bandgap of at least 2 eV, and an electronic conductivity of at least 10.sup.1 S/cm, where parameters are specified at a temperature of 25.degree. C. The optical response of the doped oxide materials results from the high carrier concentration of the doped metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration. These changes in effective carrier densities of conducting metal oxide nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary doped metal oxides include but are not limited to Al-doped ZnO, Sn-doped In.sub.2O.sub.3, Nb-doped TiO.sub.2, and F-doped SnO.sub.2.

Ohodnicki, Jr., Paul R; Wang, Congjun; Andio, Mark A

2014-01-28T23:59:59.000Z

169

Electronically conducting metal oxide nanoparticles and films for optical sensing applications  

DOE Patents [OSTI]

The disclosure relates to a method of detecting a change in a chemical composition by contacting a conducting oxide material with a monitored stream, illuminating the conducting oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The conducting metal oxide has a carrier concentration of at least 10.sup.17/cm.sup.3, a bandgap of at least 2 eV, and an electronic conductivity of at least 10.sup.-1 S/cm, where parameters are specified at the gas stream temperature. The optical response of the conducting oxide materials is proposed to result from the high carrier concentration and electronic conductivity of the conducting metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration and electronic conductivity. These changes in effective carrier densities and electronic conductivity of conducting metal oxide films and nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary conducting metal oxides include but are not limited to Al-doped ZnO, Sn-doped In.sub.2O.sub.3, Nb-doped TiO.sub.2, and F-doped SnO.sub.2.

Ohodnicki, Jr., Paul R.; Wang, Congjun; Andio, Mark A

2014-09-16T23:59:59.000Z

170

Photoelectron Imaging Spectroscopic Investigations of Transition Metal Silicides and Oxides.  

E-Print Network [OSTI]

??This dissertation presents the experimental progress in the use of photoelectron imaging spectroscopy to probe the electronic structure of negatively charged transition metal silicides and… (more)

Gunaratne, K. Don

2012-01-01T23:59:59.000Z

171

Fully Integrated Complementary Metal Oxide Semiconductor (CMOS) Bio-Assay Platform  

E-Print Network [OSTI]

PON IVD platform, namely high bio- chemical sensitivity andthat this platform had the bio- chemical selectivityThe bio-chemical sensitivity of this platform was evaluated

Florescu, Octavian

2010-01-01T23:59:59.000Z

172

Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles  

Science Journals Connector (OSTI)

...particle and QD, respectively, e is the elementary charge, RQD and {epsilon}QD are the radius and dielectric...architectures designed to reduce grain boundary resistance (25, 46, 47). Although a full understanding of the relationship...theorem, the radial component of the electric field is D r ¼ 1 r2 Z r o x x2dx...

Kevin Tvrdy; Pavel A. Frantsuzov; Prashant V. Kamat

2011-01-01T23:59:59.000Z

173

Method of nitriding, carburizing, or oxidizing refractory metal articles using microwaves  

DOE Patents [OSTI]

A method of nitriding an article of refractory-nitride-forming metal or metalloids. A consolidated metal or metalloid article is placed inside a microwave oven and nitrogen containing gas is introduced into the microwave oven. The metal or metalloid article is heated to a temperature sufficient to react the metal or metalloid with the nitrogen by applying a microwave energy within the microwave oven. The metal or metalloid article is maintained at that temperature for a period of time sufficient to convert the article of metal or metalloid to an article of refractory nitride. in addition, a method of applying a coating, such as a coating of an oxide, a carbide, or a carbo-nitride, to an article of metal or metalloid by microwave heating.

Holcombe, C.E.; Dykes, N.L.; Tiegs, T.N.

1992-10-13T23:59:59.000Z

174

Method of nitriding, carburizing, or oxidizing refractory metal articles using microwaves  

DOE Patents [OSTI]

A method of nitriding an article of refractory-nitride-forming metal or metalloids. A consolidated metal or metalloid article is placed inside a microwave oven and nitrogen containing gas is introduced into the microwave oven. The metal or metalloid article is heated to a temperature sufficient to react the metal or metalloid with the nitrogen by applying a microwave energy within the microwave oven. The metal or metalloid article is maintained at that temperature for a period of time sufficient to convert the article of metal or metalloid to an article of refractory nitride. in addition, a method of applying a coating, such as a coating of an oxide, a carbide, or a carbo-nitride, to an article of metal or metalloid by microwave heating.

Holcombe, Cressie E. (Knoxville, TN); Dykes, Norman L. (Oak Ridge, TN); Tiegs, Terry N. (Lenoir City, TN)

1992-01-01T23:59:59.000Z

175

CHEMISTRY OF SO{sub 2} ON MODEL METAL AND OXIDE CATALYSTS: PHOTOEMISSION AND XANES STUDIES  

SciTech Connect (OSTI)

High-resolution synchrotron based photoemission and x-ray absorption spectroscopy have been used to study the interaction of SO{sub 2} with a series of metals and oxides. The chemistry of SO{sub 2} on metal surfaces is rich. At low coverages, the molecule fully decomposes into atomic S and O. At large coverages, the formation of SO{sub 3} and SO{sub 4} takes place. The following sequence was found for the reactivity of the metals towards SO{sub 2}: Pt {approx} Rh < Ru < Mo << Zn, Sn, Cs. Alloying can be useful for reducing the chemical affinity of a metal for SO{sub 2} and controlling S poisoning. Pd atoms bonded to Rh and Pt atoms bonded to Sn interact weakly with SO{sub 2}. In general, SO{sub 2} mainly reacts with the O centers of metal oxides. SO{sub 4} is formed on CeO{sub 2} and SO{sub 3} on ZnO. On these systems there is no decomposition of SO{sub 2}. Dissociation of the molecule is observed after introducing a large amount of Ce{sup 3+} sites in ceria, or after depositing Cu or alkali metals on the oxide surfaces. These promote the catalytic activity of the oxides during the destruction of SO{sub 2}.

RODRIGUEZ,J.A.; JIRSAK,T.; CHATURVEDI,S.; HRBEK,J.; FREITAG,A.; LARESE,J.Z.

2000-07-09T23:59:59.000Z

176

Fabrication of superconducting metal-oxide textiles by heating impregnated polymeric material in a weakly oxidizing atmosphere  

SciTech Connect (OSTI)

A process is described for producing crystalline fibers, textiles or shapes comprised of YBa[sub 2]Cu[sub 3]O[sub 7[minus]x] where x varies from about 0 to about 0.4, said process comprising: (a) impregnating a preformed organic polymeric material with three metal compounds to provide metal elements in said material in substantially the atomic ratio occurring in said YBa[sub 2]Cu[sub 3]O[sub 7[minus]x]; (b) heating said impregnated material in a weakly oxidizing atmosphere containing from about 0.05% to about 2% oxygen by volume to a temperature sufficiently high to at least partially pyrolize and oxidize said organic material and at least partially oxidize said metal compounds substantially without ignition of said organic material and without formation of a molten phase or reaching a decomposition temperature of said YBa[sub 2]Cu[sub 3]O[sub 7[minus]x]; and (c) cooling the resulting material in at least a moderately oxidizing atmosphere to room temperature so as to obtain said fibers, textiles or shapes.

Van den Sype, J.S.

1993-07-13T23:59:59.000Z

177

Perspectives on the metallic interconnects for solid oxide fuel cells  

Science Journals Connector (OSTI)

The various stages and progress in the development of interconnect materials for solid oxide fuel cells (SOFCs) over the last two decades are reviewed. The criteria for the application of materials as intercon...

Wei-zhong Zhu; Mi Yan

2004-12-01T23:59:59.000Z

178

Electrostatic Cooperativity of Hydroxyl Groups at Metal Oxide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Oxide Surfaces. Abstract: The O-H bond distribution of hydroxyl groups at the 110 goethite (R-FeOOH) surface was investigated by molecular dynamics. This distribution was...

179

Magnetism, half-metallicity and electrical transport properties of V- and Cr-doped semiconductor SnTe: A theoretical study  

SciTech Connect (OSTI)

This work presents results for the electronic structure, magnetic properties, and electrical resistivity of the semiconductor SnTe doped with 3d transition metals V and Cr. From the standpoint of potential application in spintronics, we look for half-metallic states and analyze their properties in both rock salt and zinc blende structures using ab initio electronic structure methods. In both cases, it is the Sn-sublattice that is doped with the transition metals, as has been the case with experiments performed so far. We find four half-metallic compounds at their optimized cell volumes. Results of exchange interactions and the Curie temperature are presented and analyzed for all the relevant cases. Resistivity calculation based on Kubo-Greenwood formalism shows that the resistivities of these alloys due to transition metal doping of the Sn-sublattice may vary, in most cases, from typical liquid metal or metallic glass value to 2–3 times higher. 25% V-doping of the Sn-sublattice in the rock salt structure gives a very high resistivity, which can be traced to high values of the lattice parameter resulting in drastically reduced hopping or diffusivity of the states at the Fermi level.

Liu, Y. [State Key laboratory of Metastable Materials Science and Technology and College of Science, Yanshan University, Qinhuangdao, Hebei 066004 (China); Bose, S. K. [Physics Department, Brock University, St. Catharines, Ontario L2S 3A1 (Canada); Kudrnovský, J. [Institute of Physics, Academy of the Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8 (Czech Republic)

2013-12-07T23:59:59.000Z

180

Structure, adhesion, and stability of metal/oxide and oxide/oxide interfaces. Technical progress report, August 1, 1992--July 31, 1993  

SciTech Connect (OSTI)

Studies of structural, electronic, and chemical properties of metal/oxide and oxide/oxide interfaces were performed on well-defined interfaces that created by depositing ultra-thin potassium and aluminum films and their oxides onto single crystal TiO{sub 2} and NiO surfaces. Work focused on determining the structure, growth mechanisms, and morphologies of metal and oxide films as they are deposited an single crystal oxide surfaces using RHEED and atomic force microscopy probing electronic structure, bonding and chemical interactions at the interfaces using x-ray and uv photoelectron spectroscopies (XPS, UPS) and Auger electron spectroscopy (AES), and understanding factors affecting stability and reactivity of the interface regions including the role of defects and impurities. Results indicate that kinetic effects have an important influence on interface structure and composition, and they also show that defects in the oxide substrate induce new electronic states at the interface which play a major role in cation-anion bonding and interface interactions. The results establish a link between electronic and chemical bonding properties and the interface structure and morphology, which is required to successfully manipulate the interfacial properties of advanced ceramic materials.

Lad, R.J.

1992-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Mesoporous metal oxide microsphere electrode compositions and their methods of making  

SciTech Connect (OSTI)

Compositions and methods of making are provided for treated mesoporous metal oxide microspheres electrodes. The compositions comprise (a) microspheres with an average diameter between 200 nanometers (nm) and 10 micrometers (.mu.m); (b) mesopores on the surface and interior of the microspheres, wherein the mesopores have an average diameter between 1 nm and 50 nm and the microspheres have a surface area between 50 m.sup.2/g and 500 m.sup.2/g, and wherein the composition has an electrical conductivity of at least 1.times.10.sup.-7 S/cm at 25.degree. C. and 60 MPa. The methods of making comprise forming a mesoporous metal oxide microsphere composition and treating the mesoporous metal oxide microspheres by at least one method selected from the group consisting of: (i) annealing in a reducing atmosphere, (ii) doping with an aliovalent element, and (iii) coating with a coating composition.

Parans Paranthaman, Mariappan; Bi, Zhonghe; Bridges, Craig A; Brown, Gilbert M

2014-12-16T23:59:59.000Z

182

Semiconductor nanowires DOI: 10.1002/smll.200500094  

E-Print Network [OSTI]

of a semiconductor Si nanowire, synthesized via the VLS pro- cess, into metallic nickel silicide through parameters. Anisotropic growth of a metal onto a semiconductor nanowire (or a semicon- ductor on a metal approach to prepare metal/semiconductor nano- wire heterostructures by transforming specific sections

Rogers, John A.

183

Determination of Interfacial Adhesion Strength between Oxide Scale and Substrate for Metallic SOFC Interconnects  

SciTech Connect (OSTI)

The interfacial adhesion strength between the oxide scale and the substrate is crucial to the reliability and durability of metallic interconnects in SOFC operating environments. It is necessary, therefore, to establish a methodology to quantify the interfacial adhesion strength between the oxide scale and the metallic interconnect substrate, and furthermore to design and optimize the interconnect material as well as the coating materials to meet the design life of an SOFC system. In this paper, we present an integrated experimental/analytical methodology for quantifying the interfacial adhesion strength between oxide scale and a ferritic stainless steel interconnect. Stair-stepping indentation tests are used in conjunction with subsequent finite element analyses to predict the interfacial strength between the oxide scale and Crofer 22 APU substrate.

Sun, Xin; Liu, Wenning N.; Stephens, Elizabeth V.; Khaleel, Mohammad A.

2008-01-21T23:59:59.000Z

184

Tar Reforming in Model Gasifier Effluents: Transition Metal/Rare Earth Oxide Catalysts  

Science Journals Connector (OSTI)

Tar Reforming in Model Gasifier Effluents: Transition Metal/Rare Earth Oxide Catalysts ... So in this work we investigated the action of transition metal oxides (TMOs) other than Ni (e.g., Fe, Mn) mixed with REOs for tar reforming, at a medium temperature range (923–1073 K) and under conditions where direct reforming would dominate. ... The heated gas mixture passed through a 1/2” stainless steel tube containing 0.2–1 g of catalyst (40–60 mesh size) diluted with mullite and positioned between beds of ?-Al2O3. ...

Rui Li; Amitava Roy; Joseph Bridges; Kerry M. Dooley

2014-04-24T23:59:59.000Z

185

Metal oxide coating on first mirror in fusion reactor with carbon wall  

Science Journals Connector (OSTI)

Abstract The lifetime of diagnostic equipment in a fusion reactor is typically very short. The first mirror used to reflect optical signals for diagnostics plays a crucial role in the reactor, and it is highly important to develop a more durable first mirror which can survive in the hostile environment. In this work, by conducting electron beam deposition on molybdenum substrates, metallic oxide mirrors are prepared and studied in the simulated environment. The multi-layered metal oxide mirror exhibits much higher reflectivity than the original molybdenum one and the in situ technique to monitor the performance of the first mirror is developed and described.

Xirui Hou; Zhengwei Wu; Paul K. Chu

2014-01-01T23:59:59.000Z

186

Chemicl-looping combustion of coal with metal oxide oxygen carriers  

SciTech Connect (OSTI)

The combustion and reoxidation properties of direct coal chemical-looping combustion (CLC) over CuO, Fe2O3, Co3O4, NiO, and Mn2O3 were investigated using thermogravimetric analysis (TGA) and bench-scale fixed-bed flow reactor studies. When coal is heated in either nitrogen or carbon dioxide (CO2), 50% of weight loss was observed because of partial pyrolysis, consistent with the proximate analysis. Among various metal oxides evaluated, CuO showed the best reaction properties: CuO can initiate the reduction reaction as low as 500 °C and complete the full combustion at 700 °C. In addition, the reduced copper can be fully reoxidized by air at 700 °C. The combustion products formed during the CLC reaction of the coal/metal oxide mixture are CO2 and water, while no carbon monoxide was observed. Multicycle TGA tests and bench-scale fixed-bed flow reactor tests strongly supported the feasibility of CLC of coal by using CuO as an oxygen carrier. Scanning electron microscopy (SEM) images of solid reaction products indicated some changes in the surface morphology of a CuO-coal sample after reduction/oxidation reactions at 800 °C. However, significant surface sintering was not observed. The interactions of fly ash with metal oxides were investigated by X-ray diffraction and thermodynamic analysis. Overall, the results indicated that it is feasible to develop CLC with coal by metal oxides as oxygen carriers.

Siriwardane, R.; Tian, H.; Richards, G.; Simonyi, T.; Poston, J.

2009-01-01T23:59:59.000Z

187

Metal oxide/organic interface investigations for photovoltaic devices  

E-Print Network [OSTI]

summarises work I have carried out as a PhD student of the Optoelectronics Group at Cavendish Laboratory of the University of Cambridge since October 2010. I am thankful to the Engineering and Physical Sciences Research Council and the A.G. Leventis... are often used in many other optoelectronic devices such as photovoltaics and light emitting diodes. Sufficiently conducting oxides with the appropriate electron affinities and ionisation potentials, can be employed as charge transport and injection layers...

Pachoumi, Olympia

2014-10-07T23:59:59.000Z

188

Transition metal oxide improves overall efficiency and maintains performance with inexpensive metals.  

E-Print Network [OSTI]

of a typical device (middle); schematic energy diagram of interfacial layers PbS/MoOx, indicating carrier metals. A research team at the National Renewable Energy Laboratory (NREL) has demonstrated the overall conversion efficiency. This allows for inexpensive metals such as Al to be employed without loss

189

Criteria for Preparing and Packaging Plutonium Metals and Oxides for Long-Term Storage  

SciTech Connect (OSTI)

This Standard provides criteria for packaging of plutonium metals and stabilized oxides for storage periods of at least 50 years. To meet the criteria, plutonium-bearing materials must be in stable forms and be packaged in containers designed to maintain their integrity both under normal storage conditions and during anticipated handling accidents.

NONE

1994-12-01T23:59:59.000Z

190

Understanding the NMR shifts in paramagnetic transition metal oxides using density functional theory calculations  

E-Print Network [OSTI]

obvious. In this paper, we show by means of density functional theory DFT calcula- tions that a rationalUnderstanding the NMR shifts in paramagnetic transition metal oxides using density functional functional theory DFT calculations in the generalized gradient approximation. For each compound, we calculate

Ceder, Gerbrand

191

Nanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes  

E-Print Network [OSTI]

Nanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes ScienceDaily (Aug. 29, 2007) -- Moving beyond carbon nanotubes, researchers are developing insights-walled inorganic nanotubes could be useful in a range of nanotechnology applications that require precise control

Nair, Sankar

192

Evaluation of Novel Ceria-Supported Metal Oxides As Oxygen Carriers for Chemical-Looping Combustion  

E-Print Network [OSTI]

Evaluation of Novel Ceria-Supported Metal Oxides As Oxygen Carriers for Chemical-Looping Combustion and examined as oxygen carrier materials for chemical-looping combustion (CLC). Unlike conventional support agglomeration. 1. INTRODUCTION 1.1. Chemical-Looping Combustion. Chemical-looping combustion (CLC

Azad, Abdul-Majeed

193

Methane-to-Methanol Conversion by Gas-Phase Transition Metal Oxide Cations: Experiment and Theory  

E-Print Network [OSTI]

Methane-to-Methanol Conversion by Gas-Phase Transition Metal Oxide Cations: Experiment and Theory Ricardo B. Metz Department of Chemistry, University of Massachusetts, Amherst, MA 01003 USA Abstract Gas such as methanol has attracted great experimental and theoretical interest due to its importance as an industrial

Metz, Ricardo B.

194

Transition metal-catalyzed oxidation of atmospheric sulfur: Global implications for the sulfur budget  

E-Print Network [OSTI]

of the oxygen-17 excess (D17 O) of sulfate in the Arctic to quantify the sulfate source from aqueous SO2 (S concentrations, respectively. The solubility and oxidation state of these metals is determined by cloud liquid discrepancies with surface SO2 and sulfate observations in Europe. Oxygen isotope measurements of sulfate

Alexander, Becky

195

Self-assembly of oxide-supported metal clusters into ring-like Kristoffer Meinander,  

E-Print Network [OSTI]

Self-assembly of oxide-supported metal clusters into ring-like structures Kristoffer Meinander, Kai, Finland Abstract Self-assembly is a phenomenon that continuously occurs at the nanoscale, as atoms form of these organized systems, but the precise mechanism, with which this self-assembly progresses, is seldom known

Nordlund, Kai

196

Electrochromic nickel oxide simultaneously doped with lithium and a metal dopant  

DOE Patents [OSTI]

An electrochromic device comprising a counter electrode layer comprised of lithium metal oxide which provides a high transmission in the fully intercalated state and which is capable of long-term stability, is disclosed. Methods of making an electrochromic device comprising such a counter electrode are also disclosed.

Gillaspie, Dane T; Weir, Douglas G

2014-04-01T23:59:59.000Z

197

AC conductivity of nanoporous metal-oxide photoanodes for solar energy conversion  

E-Print Network [OSTI]

AC conductivity of nanoporous metal-oxide photoanodes for solar energy conversion Steven J. Konezny% solar-to-electric energy conversion efficiency) exploited the large surface area of nanoporous thin of nanoporous thin films without increasing the recombination rate. To ensure efficient charge carrier

Konezny, Steven J.

198

Borohydride reduction: A technique to synthesize nanosize transition metal oxides and nanocomposites  

SciTech Connect (OSTI)

This paper summarizes recent studies of using borohydride reduction to synthesize W, transition metal oxides such as WO{sub 2} and MoO{sub 2}, and Fe-Al{sub x}B{sub y}O{sub z}

Zhu, Yuntian T.; Lowe, T.C.; Stout, M.G. [Los Alamos National Lab., NM (United States); Manthiram, A.; Guggilla, S. [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering

1996-06-01T23:59:59.000Z

199

High density adsorbed oxygen on Rh,,111... and enhanced routes to metallic oxidation using atomic oxygen  

E-Print Network [OSTI]

High density adsorbed oxygen on Rh,,111... and enhanced routes to metallic oxidation using atomic oxygen K. D. Gibson, Mark Viste, Errol C. Sanchez, and S. J. Sibener The James Franck Institute; accepted 30 November 1998 Exposure of Rh 111 to atomic oxygen leads to the facile formation of a full

Sibener, Steven

200

Surfactant Organic Molecules Restore Magnetism in Metal-Oxide Nanoparticle Surfaces  

E-Print Network [OSTI]

Surfactant Organic Molecules Restore Magnetism in Metal-Oxide Nanoparticle Surfaces Juan Salafranca, Nashville, Tennessee 37235, United States *S Supporting Information ABSTRACT: The properties of magnetic nanoparticles tend to be depressed by the unavoidable presence of a magnetically inactive surface layer. However

Pennycook, Steve

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Electrospun and oxidized cellulose materials for environmental remediation of heavy metals in groundwater  

SciTech Connect (OSTI)

This chapter focuses on the use of modified cellulosic materials in the field of environmental remediation. Two different chemical methods were involved in fabricating oxidized cellulose (OC), which has shown promise as a metal ion chelator in environmental applications. Electrospinning was utilized to introduce a more porous structure into an oxidized cellulose matrix. FTIR and Raman spectroscopy were used to study both the formation of OC and its surface complexation with metal ions. IR and Raman spectroscopic data demonstrate the formation of characteristic carboxylic groups in the structure of the final products and the successful formation of OC-metal complexes. Subsequent field tests at the Field Research Site at Oak Ridge National Laboratory confirmed the value of OC for sorption of both U and Th ions.

Han, Dong [Stony Brook University (SUNY); Halada, Gary P. [Stony Brook University (SUNY); Spalding, Brian Patrick [ORNL; Brooks, Scott C [ORNL

2009-12-01T23:59:59.000Z

202

ESS 2012 Peer Review - Architectural Diversity of Metal Oxide Nanostructures - Esther Takeuchi, Stony Brook University  

Broader source: Energy.gov (indexed) [DOE]

Architectural Diversity of Metal Oxide Nanostructures: Architectural Diversity of Metal Oxide Nanostructures: An Opportunity for the Rational Optimization of Group II Cation Based Batteries. Esther S. Takeuchi, Kenneth J. Takeuchi, Amy C. Marschilok esther.takeuchi@stonybrook.edu, kenneth.takeuchi.1@stonybrook.edu, amy.marschilok@stonybrook.edu Utilize earth abundant, low cost elements with minimal environmental impact as battery materials. Exploit magnesium due to air stability and ~1,000X higher natural abundance than lithium and ~5,000X higher abundance than lead. Cathode materials feature Mn, Fe or V metal centers. Strategy Results Results This project targets some of the unique needs of large scale power storage: 1) reduced cost 2) low environmental impact 3) scalability 4) reversibility

203

Evaluation of reaction mechanism of coal-metal oxide interactions in chemical-looping combustion  

SciTech Connect (OSTI)

The knowledge of reaction mechanism is very important in designing reactors for chemical-looping combustion (CLC) of coal. Recent CLC studies have considered the more technically difficult problem of reactions between abundant solid fuels (i.e. coal and waste streams) and solid metal oxides. A definitive reaction mechanism has not been reported for CLC reaction of solid fuels. It has often been assumed that the solid/solid reaction is slow and therefore requires that reactions be conducted at temperatures high enough to gasify the solid fuel, or decompose the metal oxide. In contrast, data presented in this paper demonstrates that solid/solid reactions can be completed at much lower temperatures, with rates that are technically useful as long as adequate fuel/metal oxide contact is achieved. Density functional theory (DFT) simulations as well as experimental techniques such as thermo-gravimetric analysis (TGA), flow reactor studies, in situ X-ray photo electron spectroscopy (XPS), in situ X-ray diffraction (XRD) and scanning electron microscopy (SEM) are used to evaluate how the proximal interaction between solid phases proceeds. The data indicate that carbon induces the Cu-O bond breaking process to initiate the combustion of carbon at temperatures significantly lower than the spontaneous decomposition temperature of CuO, and the type of reducing medium in the vicinity of the metal oxide influences the temperature at which the oxygen release from the metal oxide takes place. Surface melting of Cu and wetting of carbon may contribute to the solid-solid contacts necessary for the reaction. (author)

Siriwardane, Ranjani; Richards, George; Poston, James [US Department of Energy, National Energy Technology Laboratory, 3610 Collins Ferry Road, P.O. Box 880, Morgantown, WV 26507-0880 (United States); Tian, Hanjing; Miller, Duane; Simonyi, Thomas [US Department of Energy, National Energy Technology Laboratory, 3610 Collins Ferry Road, P.O. Box 880, Morgantown, WV 26507-0880 (United States); URS, 3610 Collins Ferry Road, Morgantown, WV 26505 (United States)

2010-11-15T23:59:59.000Z

204

Definition: Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Semiconductor Jump to: navigation, search Dictionary.png Semiconductor Any material that has a limited capacity for conducting an electric current. Certain semiconductors, including silicon, gallium arsenide, copper indium diselenide, and cadmium telluride, are uniquely suited to the photovoltaic conversion process.[1] View on Wikipedia Wikipedia Definition A semiconductor is a material which has electrical conductivity to a degree between that of a metal (such as copper) and that of an insulator (such as glass). Semiconductors are the foundation of modern solid state electronics, including transistors, solar cells, light-emitting diodes (LEDs), quantum dots and digital and analog integrated circuits. A semiconductor may have a number of unique properties, one of which is the

205

Metal oxide catalysts for the low temperature selective oxidation of propane to iso-propanol.  

E-Print Network [OSTI]

??A range of Ga203/Mo03 and C03O4 catalysts have been prepared and tested for the oxidative dehydrogenation of propane to propene. The Ga2(VMo03 physical mixture demonstrated… (more)

Davies, Thomas Edward.

2006-01-01T23:59:59.000Z

206

Abstract No. pan0505 Sorption of Heavy Metal Contaminants onto Hydrated Ferric Oxides: Mechanistic Modeling using X-ray  

E-Print Network [OSTI]

Abstract No. pan0505 Sorption of Heavy Metal Contaminants onto Hydrated Ferric Oxides: Mechanistic. Hence, to understand the mobility and bioavailability of these metal contaminants, these sorption suggesting that sorption of these metal ions onto ferrihydrite can be described by one average type of site

Sparks, Donald L.

207

The Velocity of Oxidation of the Metals and the Structure of Coloured Oxide Films  

Science Journals Connector (OSTI)

... The simplest explanation of these facts would appear to be that the treatment causes a roughening of the surface, whereby the effective area of the metal is increased. If this ...

D. H. BANGHAM; J. STAFFORD

1925-01-17T23:59:59.000Z

208

Method of making a catalytic metal oxide selective for the conversion of a gas and a coating system for the selective oxidation of hydrocarbons and carbon monoxide  

SciTech Connect (OSTI)

A method is described of making a catalytic metal oxide selective to catalyzing the conversion of given gas species, comprising: intimately supporting a solid film of catalytic metal oxide on an electrically conducting material, said film having an exposed outer surface spaced no greater than 1,000 angstroms from said conducting material and said conducting material being matched to the composition of said oxide to change the electron state of the exposed outer surface to promote a reaction between given gas species and said oxide, said metal oxide being selected from the group consisting of TiO[sub 2], SnO[sub 2], FeO, SrTiO[sub 3], and CoO, and said conducting material being selected from the group consisting of Au, Pt, TiN, Pd, Rh, Ni, and Co.

Logothetis, E.M.; Soltis, R.E.

1993-07-20T23:59:59.000Z

209

Process for producing chalcogenide semiconductors  

DOE Patents [OSTI]

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Noufi, R.; Chen, Y.W.

1985-04-30T23:59:59.000Z

210

Chemical-looping combustion of coal with metal oxide oxygen carriers  

SciTech Connect (OSTI)

The combustion and reoxidation properties of direct coal chemical-looping combustion (CLC) over CuO, Fe{sub 2}O{sub 3}, CO{sub 3}O{sub 4}, NiO, and Mn{sub 2}O{sub 3} were investigated using thermogravimetric analysis (TGA) and bench-scale fixed-bed flow reactor studies. When coal is heated in either nitrogen or carbon dioxide (CO{sub 2}), 50% of weight loss was observed because of partial pyrolysis, consistent with the proximate analysis. Among various metal oxides evaluated, CuO showed the best reaction properties: CuO can initiate the reduction reaction as low as 500{sup o}C and complete the full combustion at 700{sup o}C. In addition, the reduced copper can be fully reoxidized by air at 700{sup o}C. The combustion products formed during the CLC reaction of the coal/metal oxide mixture are CO{sub 2} and water, while no carbon monoxide was observed. Multicycle TGA tests and bench-scale fixed-bed flow reactor tests strongly supported the feasibility of CLC of coal by using CuO as an oxygen carrier. Scanning electron microscopy (SEM) images of solid reaction products indicated some changes in the surface morphology of a CuO-coal sample after reduction/oxidation reactions at 800 {sup o}C. However, significant surface sintering was not observed. The interactions of fly ash with metal oxides were investigated by X-ray diffraction and thermodynamic analysis. Overall, the results indicated that it is feasible to develop CLC with coal by metal oxides as oxygen carriers. 22 refs., 12 figs., 2 tabs.

Ranjani Siriwardane; Hanjing Tian; George Richards; Thomas Simonyi; James Poston [United States Department of Energy, Morgantown, WN (United States). National Energy Technology Laboratory

2009-08-15T23:59:59.000Z

211

Electrical conductivity in oxygen-deficient phases of transition metal oxides from first-principles calculations.  

SciTech Connect (OSTI)

Density-functional theory calculations, ab-initio molecular dynamics, and the Kubo-Greenwood formula are applied to predict electrical conductivity in Ta2Ox (0x5) as a function of composition, phase, and temperature, where additional focus is given to various oxidation states of the O monovacancy (VOn; n=0,1+,2+). Our calculations of DC conductivity at 300K agree well with experimental measurements taken on Ta2Ox thin films and bulk Ta2O5 powder-sintered pellets, although simulation accuracy can be improved for the most insulating, stoichiometric compositions. Our conductivity calculations and further interrogation of the O-deficient Ta2O5 electronic structure provide further theoretical basis to substantiate VO0 as a donor dopant in Ta2O5 and other metal oxides. Furthermore, this dopant-like behavior appears specific to neutral VO cases in both Ta2O5 and TiO2 and was not observed in other oxidation states. This suggests that reduction and oxidation reactions may effectively act as donor activation and deactivation mechanisms, respectively, for VO0 in transition metal oxides.

Bondi, Robert James; Desjarlais, Michael Paul; Thompson, Aidan Patrick; Brennecka, Geoffrey L.; Marinella, Matthew

2013-09-01T23:59:59.000Z

212

Secondary cell with orthorhombic alkali metal/manganese oxide phase active cathode material  

DOE Patents [OSTI]

An alkali metal manganese oxide secondary cell is disclosed which can provide a high rate of discharge, good cycling capabilities, good stability of the cathode material, high specific energy (energy per unit of weight) and high energy density (energy per unit volume). The active material in the anode is an alkali metal and the active material in the cathode comprises an orthorhombic alkali metal manganese oxide which undergoes intercalation and deintercalation without a change in phase, resulting in a substantially linear change in voltage with change in the state of charge of the cell. The active material in the cathode is an orthorhombic structure having the formula M.sub.x Z.sub.y Mn.sub.(1-y) O.sub.2, where M is an alkali metal; Z is a metal capable of substituting for manganese in the orthorhombic structure such as iron, cobalt or titanium; x ranges from about 0.2 in the fully charged state to about 0.75 in the fully discharged state, and y ranges from 0 to 60 atomic %. Preferably, the cell is constructed with a solid electrolyte, but a liquid or gelatinous electrolyte may also be used in the cell.

Doeff, Marca M. (Hayward, CA); Peng, Marcus Y. (Cupertino, CA); Ma, Yanping (Albany, CA); Visco, Steven J. (Berkeley, CA); DeJonghe, Lutgard C. (Lafayette, CA)

1996-01-01T23:59:59.000Z

213

Secondary cell with orthorhombic alkali metal/manganese oxide phase active cathode material  

DOE Patents [OSTI]

An alkali metal manganese oxide secondary cell is disclosed which can provide a high rate of discharge, good cycling capabilities, good stability of the cathode material, high specific energy (energy per unit of weight) and high energy density (energy per unit volume). The active material in the anode is an alkali metal and the active material in the cathode comprises an orthorhombic alkali metal manganese oxide which undergoes intercalation and deintercalation without a change in phase, resulting in a substantially linear change in voltage with change in the state of charge of the cell. The active material in the cathode is an orthorhombic structure having the formula M{sub x}Z{sub y}Mn{sub (1{minus}y)}O{sub 2}, where M is an alkali metal; Z is a metal capable of substituting for manganese in the orthorhombic structure such as iron, cobalt or titanium; x ranges from about 0.2 in the fully charged state to about 0.75 in the fully discharged state, and y ranges from 0 to 60 atomic %. Preferably, the cell is constructed with a solid electrolyte, but a liquid or gelatinous electrolyte may also be used in the cell. 11 figs.

Doeff, M.M.; Peng, M.Y.; Ma, Y.; Visco, S.J.; DeJonghe, L.C.

1996-09-24T23:59:59.000Z

214

Final Report: Catalytic Hydrocarbon Reactions over Supported Metal Oxides, August 1, 1995 - July 31, 1999  

SciTech Connect (OSTI)

The research program focused on the catalysis of hydrodesulfurization (HDS) over molybdenum-based catalysts and how catalyst composition, redox ability, structure and neighboring sites control the catalytic properties of metal oxides. We sought to understand the catalytic features/sites that control hydrogenation, hydrogenolysis, and isomerization during HDS. Unprompted silica-supported molybdenum oxides and molybdenum sulfides were studied. Model catalyst systems were prepared from organometallic precursors or cluster compounds to generate supported structures that feature Mo(II) and Mo(IV) cations that are isolated or in ensembles and that have either Mo-O or Mo-S bonds. Conventional MOS{sub 2} catalysts, which contain both edge and rim sites, were be studied. Finally, single-layer MOS{sub 2} structures were also prepared from 2H-MoS{sub 2} powder so that the model systems could be compared against a disulfide catalyst that only involves rim sites. Catalytic reactions for thiophene and tetrahydrothione were studied over the various catalysts. Oxidation states were determined using X-ray photoelectron spectroscopy. X-ray crystallography was used to characterize and follow changes in the MOS{sub 2} structures. The program on metal oxides prepared supported oxides that have a specific structure and oxidation state to serve as model templates for the more complex commercial catalysts and then employed these structures in reaction studies. This focus area examined the relationships between structure and cation redox characteristics in oxidation catalysis. Infrared and Raman spectroscopy were used to characterize the cations and reaction intermediates.

Ekerdt, John G.

1999-07-31T23:59:59.000Z

215

Evaluation by room?temperature electroreflectance of the 77 K dark?storage time of bulk mercury cadmium telluride measured on metal?insulator semiconductor devices  

Science Journals Connector (OSTI)

We have studied a set of 14 very carefully characterized samples by spectroscopicellipsometry electrolyte electroreflectance (EER) and other measurements and have measured the 77 K storage time ? of metal?insulator semiconductor (MIS)devices built on these samples. The measured storage times ranged from 6.8 to 130.8 ?s. Only the results of the EER measurements showed a correlation with the measured values of ?. We interpret our EER results in terms of a two?phase model consisting of bulk plus very thin highly defectuous regions possibly associated with subgrain boundaries. The observed correlation between the values of the incremental linewidth ?? of the thin defectuous regions and the values of the charge?storage lifetimes ? of the MISdevices is excellent and capable of predicting the values of ?. Furthermore the exact form of the observed correlation is shown to follow immediately from a simple physical model.Correlations between the values of ? and those of other parameters measured by EER were also observed. They suggest a possible simple physical picture for the primary origin of dark current in these devices. This is the first predictive quantitative correlation ever observed between the results of room?temperature optical characterizations of semiconductor materials and the low?temperature electrical performance of devices built on those materials.

Paul M. Raccah; James W. Garland; De Yang; Hisham Abad; Roger L. Strong; Matthew C. McNeill

1989-01-01T23:59:59.000Z

216

Study of metallic materials for solid oxide fuel cell interconnect applications.  

SciTech Connect (OSTI)

Metallic interconnect acts as a gas separator and a gas distributor and therefore, it needs to function adequately in two widely different environments. The interconnect material will be exposed to air on one side and natural gas or coal-derived synthesis gas on the other side. The viable material for the interconnect application must be resistant not only to oxidation but also carburization in hydrocarbon containing low-oxygen environments. In addition, the scales that develop on the exposed surfaces must possess adequate electrical conductivity for them to function as current leads over long service life of the fuel cell. This report addresses five topics of interest for the development of metallic interconnects with adequate performance in fuel cells for long service life. The research conducted over the years and the conclusions reached were used to identify additional areas of research on materials for improved performance of components, especially metallic interconnects, in the complex fuel cell environments. This report details research conducted in the following areas: measurement of area specific electrical resistivity, corrosion performance in dual gas environments by experiments using alloy 446, long term corrosion performance of ferritic and austenitic alloys in hydrogen and methane-reformed synthesis fuel-gas environments, approaches to reduce the area resistance of metallic interconnect, and reduction of electrical resistivity of alumina scales on metallic interconnect. Based on the key requirements for metallic interconnects and the data developed on the corrosion behavior of candidate materials in meeting those requirements, several areas are recommended for further research to develop metallic interconnects with acceptable and reliable long-term performance in solid oxide fuel cells.

Natesan, K.; Zeng, Z.; Nuclear Engineering Division

2009-04-24T23:59:59.000Z

217

Composite materials with metal oxide attached to lead chalcogenide nanocrystal quantum dots with linkers  

DOE Patents [OSTI]

Composite materials useful for devices such as photoelectrochemical solar cells include a substrate, a metal oxide film on the substrate, nanocrystalline quantum dots (NQDs) of lead sulfide, lead selenide, and lead telluride, and linkers that attach the NQDs to the metal oxide film. Suitable linkers preserve the 1s absorption peak of the NQDs. A suitable linker has a general structure A-B-C where A is a chemical group adapted for binding to a MO.sub.x and C is a chemical group adapted for binding to a NQD and B is a divalent, rigid, or semi-rigid organic spacer moiety. Other linkers that preserve the 1s absorption peak may also be used.

Fuke, Nobuhiro; Koposov, Alexey Y; Sykora, Milan; Hoch, Laura

2014-12-16T23:59:59.000Z

218

Inert anode containing oxides of nickel iron and cobalt useful for the electrolytic production of metals  

DOE Patents [OSTI]

An inert anode for the electrolytic production of metals such as aluminum is disclosed. The inert anode includes a ceramic oxide material preferably made from NiO, Fe.sub.2 O.sub.3 and CoO. The inert anode composition may comprise the following mole fractions of NiO, Fe.sub.2 O.sub.3 and CoO: 0.15 to 0.99 NiO; 0.0001 to 0.85 Fe.sub.2 O.sub.3 ; and 0.0001 to 0.45 CoO. The inert anode may optionally include other oxides and/or at least one metal phase, such as Cu, Ag, Pd, Pt, Au, Rh, Ru, Ir and/or Os. The Ni--Fe--Co--O ceramic material exhibits very low solubility in Hall cell baths used to produce aluminum.

Ray, Siba P. (Murrysville, PA); Liu, Xinghua (Monroeville, PA); Weirauch, Jr., Douglas A. (Murrysville, PA)

2002-01-01T23:59:59.000Z

219

Inert anode containing oxides of nickel, iron and zinc useful for the electrolytic production of metals  

DOE Patents [OSTI]

An inert anode for the electrolytic production of metals such as aluminum is disclosed. The inert anode includes a ceramic oxide material preferably made from NiO, Fe.sub.2 O.sub.3 and ZnO. The inert anode composition may comprise the following mole fractions of NiO, Fe.sub.2 O.sub.3 and ZnO: 0.2 to 0.99 NiO; 0.0001 to 0.8 Fe.sub.2 O.sub.3 ; and 0.0001 to 0.3 ZnO. The inert anode may optionally include other oxides and/or at least one metal phase, such as Cu, Ag, Pd, Pt, Au, Rh, Ru, Ir and/or Os. The Ni--Fe--Co--O ceramic material exhibits very low solubility in Hall cell baths used to produce aluminum.

Ray, Siba P. (Murrysville, PA); Weirauch, Jr., Douglas A. (Murrysville, PA); Liu, Xinghua (Monroeville, PA)

2002-01-01T23:59:59.000Z

220

Oxidative dehydrogenation (ODH) of ethane with O[subscript 2] as oxidant on selected transition metal-loaded zeolites  

SciTech Connect (OSTI)

Ni-, Cu-, and Fe-loaded acidic and basic Y zeolites were synthesized, and their catalytic properties for oxidative dehydrogenation of ethane (ODHE) to ethylene were characterized. Acidic Ni-loaded Y zeolite exhibits an ethylene productivity of up to 108 g{sub C{sub 2}H{sub 4}}g{sub cat}{sup -1} h{sup -1} with a selectivity of {approx}75%. Acidic Cu- and Fe-loaded Y zeolites have an ethylene productivity of up to 0.37 g{sub C{sub 2}H{sub 4}}g{sub cat}{sup -1} h{sup -1} and a selectivity of {approx}50%. For the same metal, the acidity of the zeolite favors both ODHE productivity and ethylene selectivity. Extended X-ray absorption fine structure (EXAFS) studies show that Ni, present in particles on Ni/HY during the ODHE catalytic process, contains both Ni-Ni and Ni-O bonds, and that the ratio of oxidized Ni versus metallic Ni increases with the temperature. The insights these studies provide into the ODHE reaction mechanism are discussed.

Lin, Xufeng; Hoel, Cathleen A.; Sachtler, Wolfgang M.H.; Poeppelmeier, Kenneth R.; Weitz, Eric; (NWU)

2009-09-14T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

The steady-state thermal-hydraulic performance of 3500 MWth metal and oxide fueled LMRs  

SciTech Connect (OSTI)

The thermal-hydraulic performance of a 3500 MWth metal and oxide fueled LMR is reported. Orifice zones are defined and coolant flowrates are given for use in safety analyses. The flux calculations were carried out in three-dimensional hexagonal-Z geometry using a finite differenced diffusion theory code. The heating calculations included the transport and deposition of gamma energy. The assembly temperature calculations were performed using a subchannel code.

Vilim, R.B.; Hill, R.N.

1989-03-01T23:59:59.000Z

222

Surface Science Letters Bulk-defect dependent adsorption on a metal oxide surface  

E-Print Network [OSTI]

-6028(01)01067-6 #12;Titanium dioxide is a wide-band gap semicon- ductor (Egap 3 eV) that can easily be reducedSurface Science Letters Bulk-defect dependent adsorption on a metal oxide surface: S/TiO2(1 1 0) E Abstract The adsorption of molecular sulfur on TiO2(1 1 0)(1 Ã? 1) has been studied with scanning tunneling

Diebold, Ulrike

223

The interactions between transition metal nanoparticles and their metal-oxide supports are often critical for heterogeneous metal nanoparticle  

E-Print Network [OSTI]

for selective hydrogenations (2, 3), oxidations (3­5), and the water-gas shift (WGS) reaction (3, 6). Several to saturation kinetics, with added water affecting the kinetics of the RDS. We explored potential mechanistic oxygen from the support (21, 27). Perhaps most importantly, as Fig. 1A shows, water dramatically

Napp, Nils

224

Evidence of the semiconductor-metal transition in V{sub 2}O{sub 5} thin films by the pulsed laser photoacoustic method  

SciTech Connect (OSTI)

In this work, the pulsed photoacoustic technique was used to investigate the semiconductor-metal transition of thin vanadium pentoxide films (V{sub 2}O{sub 5}) under increasing temperature. The V{sub 2}O{sub 5} thin films were simultaneously deposited by RF magnetron sputtering at room temperature, on corning glass and SnO{sub 2}:F/glass substrates, in order to compare the photoacoustic response. The elemental and structural analysis of the V{sub 2}O{sub 5} films was performed by Rutherford backscattering spectroscopy and X-ray diffraction. The optical transmission and band gap were determined using UV-Vis spectroscopy. The electrical properties were measured using four-point probe measurements with the Van der Pauw geometry.

Perez-Pacheco, A.; Acosta-Najarro, D. R.; Cruz-Manjarrez, H.; Rodriguez-Fernandez, L.; Pineda-Santamaria, J. C; Aguilar-Franco, M. [Instituto de Fisica-Universidad Nacional Autonoma de Mexico, Mexico DF (Mexico)] [Instituto de Fisica-Universidad Nacional Autonoma de Mexico, Mexico DF (Mexico); Castaneda-Guzman, R. [Laboratorio de Fotofisica y Peliculas Delgadas, CCADET-UNAM, Mexico DF (Mexico)] [Laboratorio de Fotofisica y Peliculas Delgadas, CCADET-UNAM, Mexico DF (Mexico)

2013-05-14T23:59:59.000Z

225

Beyond the Lone-Pair Model for Structurally Distorted Metal Oxides  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Beyond the Lone-Pair Model for Structurally Distorted Metal Oxides Print Beyond the Lone-Pair Model for Structurally Distorted Metal Oxides Print "Ferroelectricity," by analogy to ferromagnetism, is defined as the presence of spontaneous electrical polarization in a material, often arising from distortions in the material's crystal structure. In oxides of the metals lead and bismuth, such distortions were for many years attributed to the existence of "lone pair" electrons: pairs of chemically inert, nonbonding valence electrons in hybrid orbitals that leave noticeable voids in the crystal structure. At the ALS, researchers from the U.K., Ireland, and the U.S. have now obtained definitive experimental evidence that this lone-pair model must be revised. High-resolution x-ray photoemission spectroscopy (XPS) and soft x-ray emission spectroscopy (XES) have clarified the subtle electronic origins of the prototypical distortions in these crystal structures. The results have important implications for the tantalizing possibility of spintronic or superconducting devices combining ferroelectric and ferromagnetic properties.

226

Beyond the Lone-Pair Model for Structurally Distorted Metal Oxides  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Beyond the Lone-Pair Model for Structurally Distorted Metal Oxides Print Beyond the Lone-Pair Model for Structurally Distorted Metal Oxides Print "Ferroelectricity," by analogy to ferromagnetism, is defined as the presence of spontaneous electrical polarization in a material, often arising from distortions in the material's crystal structure. In oxides of the metals lead and bismuth, such distortions were for many years attributed to the existence of "lone pair" electrons: pairs of chemically inert, nonbonding valence electrons in hybrid orbitals that leave noticeable voids in the crystal structure. At the ALS, researchers from the U.K., Ireland, and the U.S. have now obtained definitive experimental evidence that this lone-pair model must be revised. High-resolution x-ray photoemission spectroscopy (XPS) and soft x-ray emission spectroscopy (XES) have clarified the subtle electronic origins of the prototypical distortions in these crystal structures. The results have important implications for the tantalizing possibility of spintronic or superconducting devices combining ferroelectric and ferromagnetic properties.

227

Oxidation Resistant, Cr Retaining, Electrically Conductive Coatings on Metallic Alloys for SOFC Interconnects  

SciTech Connect (OSTI)

This report describes significant results from an on-going, collaborative effort to enable the use of inexpensive metallic alloys as interconnects in planar solid oxide fuel cells (SOFCs) through the use of advanced coating technologies. Arcomac Surface Engineering, LLC, under the leadership of Dr. Vladimir Gorokhovsky, is investigating filtered-arc and filtered-arc plasma-assisted hybrid coating deposition technologies to promote oxidation resistance, eliminate Cr volatility, and stabilize the electrical conductivity of both standard and specialty steel alloys of interest for SOFC metallic interconnect (IC) applications. Arcomac has successfully developed technologies and processes to deposit coatings with excellent adhesion, which have demonstrated a substantial increase in high temperature oxidation resistance, stabilization of low Area Specific Resistance values and significantly decrease Cr volatility. An extensive matrix of deposition processes, coating compositions and architectures was evaluated. Technical performance of coated and uncoated sample coupons during exposures to SOFC interconnect-relevant conditions is discussed, and promising future directions are considered. Cost analyses have been prepared based on assessment of plasma processing parameters, which demonstrate the feasibility of the proposed surface engineering process for SOFC metallic IC applications.

Vladimir Gorokhovsky

2008-03-31T23:59:59.000Z

228

Plasmonic transparent conducting metal oxide nanoparticles and nanoparticle films for optical sensing applications  

SciTech Connect (OSTI)

The ability to monitor gas species selectively, sensitively, and reliably in extreme temperatures and harsh conditions is critically important for more efficient energy production using conventional fossil energy based production technologies, enabling advanced technologies for fossil based power plants of the future, and improving efficiency in domestic manufacturing industries. Optical waveguide based sensing platforms have become increasingly important but a need exists for materials that exhibit useful changes in optical properties in response to changing gas atmospheres at high temperatures. In this manuscript, the onset of a near-IR absorption associated with an increase in free carrier density in doped metal oxide nanoparticles to form so-called conducting metal oxides is discussed in the context of results obtained for undoped and Al-doped ZnO nanoparticle based films. Detailed film characterization results are presented along with measured changes in optical absorption resulting from various high temperature treatments in a range of gas atmospheres. Optical property changes are also discussed in the context of a simple model for optical absorption in conducting metal oxide nanoparticles and thin films. The combination of experimental results and theoretical modeling presented here suggests that such materials have potential for high temperature optical gas sensing applications. Simulated sensing experiments were performed at 500 °C and a useful, rapid, and reproducible near-IR optical sensing response to H{sub 2} confirms that this class of materials shows great promise for optical gas sensing.

Ohodnicki, Paul R., Jr.; Wang, Congjun; Andio, Mark

2013-07-31T23:59:59.000Z

229

Activation of Noble Metals on Metal-Carbide Surfaces: Novel Catalysts for CO Oxidation, Desulfurization and Hydrogenation Reactions  

SciTech Connect (OSTI)

This perspective article focuses on the physical and chemical properties of highly active catalysts for CO oxidation, desulfurization and hydrogenation reactions generated by depositing noble metals on metal-carbide surfaces. To rationalize structure-reactivity relationships for these novel catalysts, well-defined systems are required. High-resolution photoemission, scanning tunneling microscopy (STM) and first-principles periodic density-functional (DF) calculations have been used to study the interaction of metals of Groups 9, 10 and 11 with MC(001) (M = Ti, Zr, V, Mo) surfaces. DF calculations give adsorption energies that range from 2 eV (Cu, Ag, Au) to 6 eV (Co, Rh, Ir). STM images show that Au, Cu, Ni and Pt grow on the carbide substrates forming two-dimensional islands at very low coverage, and three-dimensional islands at medium and large coverages. In many systems, the results of DF calculations point to the preferential formation of admetal-C bonds with significant electronic perturbations in the admetal. TiC(001) and ZrC(001) transfer some electron density to the admetals facilitating bonding of the adatom with electron-acceptor molecules (CO, O{sub 2}, C{sub 2}H{sub 4}, SO{sub 2}, thiophene, etc.). For example, the Cu/TiC(001) and Au/TiC(001) systems are able to cleave both S-O bonds of SO{sub 2} at a temperature as low as 150 K, displaying a reactivity much larger than that of TiC(001) or extended surfaces of bulk copper and gold. At temperatures below 200 K, Au/TiC is able to dissociate O{sub 2} and perform the 2CO + O{sub 2} {yields} 2CO{sub 2} reaction. Furthermore, in spite of the very poor hydrodesulfurization performance of TiC(001) or Au(111), a Au/TiC(001) surface displays an activity for the hydrodesulfurization of thiophene higher than that of conventional Ni/MoS{sub x} catalysts. In general, the Au/TiC system is more chemically active than systems generated by depositing Au nanoparticles on oxide surfaces. Thus, metal carbides are excellent supports for enhancing the chemical reactivity of noble metals.

Rodriguez J. A.; Illas, F.

2012-01-01T23:59:59.000Z

230

Catalytic activity of tetravalent metal phosphates and phosphonates on the oxidation of (+)-3-carene  

Science Journals Connector (OSTI)

Tetravalent metal phosphates and phosphonates form highly insoluble inorganic polymers and can act as good catalysts in some oxidative reactions. In the present work, zirconium phosphate amorphous (ZrPA), scandium exchanged zirconium phosphate amorphous (ScZrPA), sodium exchanged zirconium phosphate amorphous (NaZrPA), potassium exchanged zirconium phosphate amorphous (KZrPA), zirconium phenylphosphonate amorphous (ZrPPA) and zirconium phenylphosphonate phosphate amorphous (ZrPA/ZrPPA), were prepared and evaluated as catalysts for the oxidation of 3,7,7-trimethylbicyclo[4.1.0]hept-3-ene [(+)-3-carene)] by hydrogen peroxide, in different solvents. It was found that the oxidation reaction of (+)-3-carene yielded three major products, namely ?-3,4-epoxycarane, carane-3?,4?-diol and 3?-acetoxycaran-4?-ol, depending on the catalyst and solvent conditions. No ?-3,4-epoxycarane was detected in the studied conditions.

Graça M.S.R.O. Rocha; Rui M.A. Domingues; Mário M.Q. Simões; Artur M.S. Silva

2009-01-01T23:59:59.000Z

231

Modelling of thermo-mechanical and irradiation behavior of metallic and oxide fuels for sodium fast reactors  

E-Print Network [OSTI]

A robust and reliable code to model the irradiation behavior of metal and oxide fuels in sodium cooled fast reactors is developed. Modeling capability was enhanced by adopting a non-empirical mechanistic approach to the ...

Karahan, Aydin

2009-01-01T23:59:59.000Z

232

Recent trends in the microwave-assisted synthesis of metal oxide nanoparticles supported on carbon nanotubes and their applications  

Science Journals Connector (OSTI)

The study of coating carbon nanotubes with metal/oxides nanoparticles is now becoming a promising and challenging area of research. To optimize the use of carbon nanotubes in various applications, it is necessary to attach functional groups or other ...

Sarah C. Motshekga; Sreejarani K. Pillai; Suprakas Sinha Ray; Kalala Jalama; Rui. W. M. Krause

2012-01-01T23:59:59.000Z

233

Synthesis and structural, magnetic, thermal, and transport properties of several transition metal oxides and aresnides  

SciTech Connect (OSTI)

Oxide compounds containing the transition metal vanadium (V) have attracted a lot of attention in the field of condensed matter physics owing to their exhibition of interesting properties including metal-insulator transitons, structural transitions, ferromagnetic and antiferromagnetic orderings, and heavy fermion behavior. Binary vanadium oxides V{sub n}O{sub 2n-1} where 2 {le} n {le} 9 have triclinic structures and exhibit metal-insulator and antiferromagnetic transitions. The only exception is V{sub 7}O{sub 13} which remains metallic down to 4 K. The ternary vanadium oxide LiV{sub 2}O{sub 4} has the normal spinel structure, is metallic, does not undergo magnetic ordering and exhibits heavy fermion behavior below 10 K. CaV{sub 2}O{sub 4} has an orthorhombic structure with the vanadium spins forming zigzag chains and has been suggested to be a model system to study the gapless chiral phase. These provide great motivation for further investigation of some known vanadium compounds as well as to explore new vanadium compounds in search of new physics. This thesis consists, in part, of experimental studies involving sample preparation and magnetic, transport, thermal, and x-ray measurements on some strongly correlated eletron systems containing the transition metal vanadium. The compounds studied are LiV{sub 2}O{sub 4}, YV{sub 4}O{sub 8}, and YbV{sub 4}O{sub 8}. The recent discovery of superconductivity in RFeAsO{sub 1-x}F{sub x} (R = La, Ce, Pr, Gd, Tb, Dy, Sm, and Nd), and AFe{sub 2}As{sub 2} (A = Ba, Sr, Ca, and Eu) doped with K, Na, or Cs at the A site with relatively high T{sub c} has sparked tremendous activities in the condensed matter physics community and a renewed interest in the area of superconductivity as occurred following the discovery of the layered cuprate high T{sub c} superconductors in 1986. To discover more superconductors with hopefully higher T{sub c}'s, it is extremely important to investigate compounds having crystal structures related to the compounds showing high T{sub c} superconductivity. Along with the vanadium oxide compounds described before, this thesis describes our investigations of magnetic, structural, thermal and transport properties of EuPd{sub 2}Sb{sub 2} single crystals which have a crystal structure closely related to the AFe{sub 2}As{sub 2} compounds and also a study of the reaction kinetics of the formation of LaFeAsO{sub 1-x}F{sub x}.

Das, Supriyo

2010-05-16T23:59:59.000Z

234

Modifications of the surface properties of metals by oxide overlayers: 1, Oxidized zirconium deposited on the Pt(100) single crystal surface  

SciTech Connect (OSTI)

Metallic zirconium was deposited on a single crystal Pt(100) surface by thermal evaporation in UHV conditions. The deposit was oxidized by exposure to oxygen immediately after deposition. Oxidized zirconium was found to grow on the platinum ace by the layer-by-layer mechanism. The adsorption of carbon monoxide on the surface was studied as a function of the zirconium coverage. The results show that oxidized zirconium forms a chemically inert layer which blocks the adsorptive sites of the underlying platinum substrate. The properties of the free Pt surface were unaffected by the presence of the oxidized zirconium layer.

Bardi, U.; Ross, P.N.

1986-06-01T23:59:59.000Z

235

Effect of the metal-semiconductor phase transition on the rate of hydrogen penetration into vanadium dioxide thin films  

Science Journals Connector (OSTI)

The rates of hydrogen penetration from an aqueous solution of glycerin into ... compared. It has been found that the rate of hydrogen penetration into the metal phase of vanadium dioxide ... order of magnitude hi...

V. N. Andreev; V. A. Klimov

2010-03-01T23:59:59.000Z

236

REFORMULATION OF COAL-DERIVED TRANSPORTATION FUELS: SELECTIVE OXIDATION OF CARBON MONOXIDE ON METAL FOAM CATALYSTS  

SciTech Connect (OSTI)

Uses for structured catalytic supports, such as ceramic straight-channel monoliths and ceramic foams, have been established for a long time. One of the most prominent examples is the washcoated ceramic monolith as a three-way catalytic converter for gasoline-powered automobiles. A distinct alternative to the ceramic monolith is the metal foam, with potential use in fuel cell-powered automobiles. The metal foams are characterized by their pores per inch (ppi) and density ({rho}). In previous research, using 5 wt% platinum (Pt) and 0.5 wt% iron (Fe) catalysts, washcoated metal foams, 5.08 cm in length and 2.54 cm in diameter, of both varying and similar ppi and {rho} were tested for their activity (X{sub CO}) and selectivity (S{sub CO}) on a CO preferential oxidation (PROX) reaction in the presence of a H{sub 2}-rich gas stream. The variances in these metal foams' activity and selectivity were much larger than expected. Other structured supports with 5 wt% Pt, 0-1 wt% Fe weight loading were also examined. A theory for this phenomenon states that even though these structured supports have a similar nominal catalyst weight loading, only a certain percentage of the Pt/Fe catalyst is exposed on the surface as an active site for CO adsorption. We will use two techniques, pulse chemisorption and temperature programmed desorption (TPD), to characterize our structured supports. Active metal count, metal dispersion, and other calculations will help clarify the causes for the activity and selectivity variations between the supports. Results on ceramic monoliths show that a higher Fe loading yields a lower dispersion, potentially because of Fe inhibition of the Pt surface for CO adsorption. This theory is used to explain the reason for activity and selectivity differences for varying ppi and {rho} metal foams; less active and selective metal foams have a lower Fe loading, which justifies their higher metal dispersion. Data on the CO desorption temperature and average metal crystallite size for TPD are also collected.

Paul Chin; George W. Roberts; James J. Spivey

2003-12-31T23:59:59.000Z

237

Chemical spray pyrolysis deposition and characterization of p-type CuCr1?xMgxO2 transparent oxide semiconductor thin films  

Science Journals Connector (OSTI)

A chemical spray pyrolysis technique for deposition of p-type Mg-doped CuCrO2 transparent oxide semiconductor thin films using metaloorganic precursors is described. As-deposited films contain mixed spinel CuCr2O4 and delafossite CuCrO2 structural phases. Reduction in spinel CuCr2O4 fraction and formation of highly crystalline films with single phase delafossite CuCrO2 structure is realized by annealing at temperatures ?700 °C in argon. A mechanism of synthesis of CuCrO2 films involving precursor decomposition, oxidation and reaction between constituent oxides in the spray deposition process is presented. Post-annealed CuCr0.93Mg0.07O2 thin films show high (?80%) visible transmittance and sharp absorption at band gap energy with direct and indirect optical band gaps 3.11 and 2.58 eV, respectively. Lower (?450 °C) substrate temperature formed films are amorphous and yield lower direct (2.96 eV) and indirect (2.23 eV) band gaps after crystallization. Electrical conductivity of CuCr0.93 Mg0.07O2 thin films ranged 0.6–1 S cm?1 and hole concentration ?2×1019 cm?3 determined from Seebeck analysis. Temperature dependence of conductivity exhibit activation energies ?0.11 eV in 300–470 K and ?0.23 eV in ?470 K region ascribed to activated conduction and grain boundary trap assisted conduction, respectively. Heterojunction diodes of the structure Au/n-(ZnO)/p-(CuCr0.93Mg0.07O2)/SnO2 (TCO) were fabricated which show potential for transparent wide band gap junction device.

S.H. Lim; Suma Desu; A.C. Rastogi

2008-01-01T23:59:59.000Z

238

Study of microstructure and semiconductor to metallic conductivity transition in solid state sintered Li{sub 0.5}Mn{sub 0.5}Fe{sub 2}O{sub 4??} spinel ferrite  

SciTech Connect (OSTI)

Li{sub 0.5}Mn{sub 0.5}Fe{sub 2}O{sub 4} ferrite has been prepared by solid state sintering route. XRD pattern showed single phased cubic spinel structure. The samples exhibited typical character of plastoferrite with ring shaped surface microstructure. New feature observed in the present ferrite is the frequency activated conductivity transition from semiconductor to metallic state above 800?K. The increase of conductivity with frequency in the semiconducting regime follows Jonscher power law, while decrease of conductivity in metallic regime obeys Drude equation. The conductivity in semiconductor regime has been understood by hopping mechanism of localized charge carriers among the cations in B sites of cubic spinel structure. At higher temperatures, overlapping of electronic orbitals from neighbouring ions and free particle like motion of lighter Li{sup +} ions among interstitial lattices contributed metallic conductivity. The samples provided evidence of localized nature of the charge carriers at lower temperatures and increasing delocalized character with the increase of measurement temperature. From application point of view, such ferrites behave as semiconductor at low temperature and allow electromagnetic wave to pass through, but transform into a metallic reflector with negative dielectric constant at high temperature.

Bhowmik, R. N., E-mail: rnbhowmik.phy@pondiuni.edu.in; Vijayasri, G. [Department of Physics, Pondicherry University, R. Venkataraman Nagar, Kalapet, Puducherry-605 014 (India)

2013-12-14T23:59:59.000Z

239

Correlation effects in (111) bilayers of perovskite transition-metal oxides  

SciTech Connect (OSTI)

We investigate the correlation-induced Mott, magnetic, and topological phase transitions in artificial (111) bilayers of perovskite transition-metal oxides LaAuO3 and SrIrO3 for which the previous density-functional theory calculations predicted topological insulating states. Using the dynamical-mean-field theory with realistic band structures and Coulomb interactions, LaAuO3 bilayer is shown to be far away from a Mott insulating regime, and a topological-insulating state is robust. On the other hand, SrIrO3 bilayer is on the verge of an orbital-selective topological Mott transition and turns to a trivial insulator by an antiferromagnetic ordering. Oxide bilayers thus provide a novel class of topological materials for which the interplay between the spin-orbit coupling and electron-electron interactions is a fundamental ingredient.

Okamoto, Satoshi [ORNL] [ORNL; Zhu, Wenguang [University of Science and Technology of China] [University of Science and Technology of China; Nomura, Yusuke [University of Tokyo, Japan] [University of Tokyo, Japan; Arita, R. [University of Tokyo, Japan] [University of Tokyo, Japan; Xiao, Di [Carnegie Mellon University (CMU)] [Carnegie Mellon University (CMU); Nagaosa, Naoto [University of Tokyo, Japan] [University of Tokyo, Japan

2014-01-01T23:59:59.000Z

240

Pt–metal oxide aerogel catalysts: X-ray photoemission investigation  

Science Journals Connector (OSTI)

X-ray photoemission spectroscopy was used to study Pt–metal oxide aerogel catalysts that have been developed to respond to increased NO x emissions of lean-burn engines. Lean-burn engines critical components of low and zero emission vehicles produce much higher levels of engine-out NO x and current three-way catalytic converters are not sufficient to meet Clean Air Act standards. Platinum catalysts were formed by the reaction of modified Pt coordination compounds with selected transition–metal alkoxides through sol–gel techniques into aerogels. Photoemission measurements of the Pt 4f Si 2p Ti 2p O 1s and C 1s core lines were used to evaluate the chemistry of the material after each processing step. Results indicate Pt–O bonding and reduced Pt disbursed in the aerogel. In addition Si 2p Ti 2p and O 1s binding energies indicate an oxo-bridged network structure.

A. J. Nelson; John G. Reynolds; R. D. Sanner; P. R. Coronado; L. M. Hair

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Strain induced electronic structure changes in magnetic transition metal oxides thin films  

SciTech Connect (OSTI)

We show that the angular dependence of x-ray magnetic circular dichroism (XMCD) is strongly sensitive to strain-induced electronic structure changes in magnetic transition metal oxides. We observe a pronounced dependence of the XMCD spectral shape on the experimental geometry as well as nonvanishing XMCD with distinct spectral features in transverse geometry in compressively strained MnCr{sub 2}O{sub 4} films. The angular dependent XMCD can be described as a sum over an isotropic and anisotropic contribution, the latter linearly proportional to the axial distortion due to strain. The XMCD spectra are well reproduced by atomic multiplet calculations.

van der Laan, G.; Chopdekar, R.V.; Suzuki, Y.; Arenholz, E.

2010-07-08T23:59:59.000Z

242

Atomic polar tensors and acid-base properties of metal-oxide building blocks  

SciTech Connect (OSTI)

The sensitivity of the atomic polar tensor to compositional substituents is reported for the alkali silicate series. Rotational invariants, effective atomic charge (GAPT) and charge normalized anisotropy and dipole ({alpha}{sub n} and {gamma}{sub n}) are used to characterize the charge distribution and chemical environment of the atomic sites. Comparison of {alpha}{sub n} and {gamma}{sub n} with a series of known Bronsted and Lewis acids and bases suggests that these rotational invariants may act as indicators for metal-oxide site acidities. Basis set and electron correlation particularly affect the determined effective charge, but show minimal effect on {alpha} and {gamma} quantities.

Ferris, K.F.

1993-02-01T23:59:59.000Z

243

Atomic polar tensors and acid-base properties of metal-oxide building blocks  

SciTech Connect (OSTI)

The sensitivity of the atomic polar tensor to compositional substituents is reported for the alkali silicate series. Rotational invariants, effective atomic charge (GAPT) and charge normalized anisotropy and dipole ([alpha][sub n] and [gamma][sub n]) are used to characterize the charge distribution and chemical environment of the atomic sites. Comparison of [alpha][sub n] and [gamma][sub n] with a series of known Bronsted and Lewis acids and bases suggests that these rotational invariants may act as indicators for metal-oxide site acidities. Basis set and electron correlation particularly affect the determined effective charge, but show minimal effect on [alpha] and [gamma] quantities.

Ferris, K.F.

1993-02-01T23:59:59.000Z

244

REFORMULATION OF COAL-DERIVED TRANSPORTATION FUELS: SELECTIVE OXIDATION OF CARBON MONOXIDE ON METAL FOAM CATALYSTS  

SciTech Connect (OSTI)

Hydrocarbon fuels must be reformed in a series of steps to provide hydrogen for use in proton exchange membrane fuel cells (PEMFCs). Preferential oxidation (PROX) is one method to reduce the CO concentration to less than 10 ppm in the presence of {approx}40% H{sub 2}, CO{sub 2}, and steam. This will prevent CO poisoning of the PEMFC anode. Structured supports, such as ceramic monoliths, can be used for the PROX reaction. Alternatively, metal foams offer a number of advantages over the traditional ceramic monolith.

Paul Chin; Xiaolei Sun; George W. Roberts; Amornmart Sirijarhuphan; Sourabh Pansare; James G. Goodwin Jr; Richard W. Rice; James J. Spivey

2005-06-01T23:59:59.000Z

245

Synthesis of transition metal nitride by nitridation of metastable oxide precursor  

SciTech Connect (OSTI)

Metastable transition metal oxides were used as precursors to synthesize transition metal nitrides at low temperature. Amorphous MoO{sub 2} was prepared by reduction of (NH{sub 4}){sub 6}Mo{sub 7}O{sub 24} solution with hydrazine. As-synthesized amorphous MoO{sub 2} was transformed into fcc {gamma}-Mo{sub 2}N at 400 Degree-Sign C and then into hexagonal {delta}-MoN by further increasing the temperature to 600 Degree-Sign C under a NH{sub 3} flow. The nitridation temperature employed here is much lower than that employed in nitridation of crystalline materials, and the amorphous materials underwent a unique nitridation process. Besides this, the bimetallic nitride Ni{sub 2}Mo{sub 3}N was also synthesized by nitridating amorphous bimetallic precursor. These results suggested that the nitridation of amorphous precursor possessed potential to be a general method for synthesizing many interstitial metallic compounds, such as nitrides and carbides at low temperature. - graphical abstract: Amorphous oxide was used as new precursor to prepare nitride at low temperature. Pure {gamma}-Mo{sub 2}N and {delta}-MoN were obtained at 400 Degree-Sign C and at 600 Degree-Sign C, respectively. Highlights: Black-Right-Pointing-Pointer We bring out a new method to synthesize transition metal nitrides at low temperature. Black-Right-Pointing-Pointer Both mono- and bimetallic molybdenum nitrides were synthesized at a mild condition. Black-Right-Pointing-Pointer The formation of two different molybdenum nitrides {gamma}-Mo{sub 2}N and {delta}-MoN can be controlled from the same metastable precursor. Black-Right-Pointing-Pointer The nitridation temperature was much lower than that reported from crystalline precursors. Black-Right-Pointing-Pointer The metastable precursor had different reaction process in comparison with crystalline precursor.

Wang, Huamin; Wu, Zijie; Kong, Jing [Key Laboratory of Advanced Energy Materials Chemistry (MOE), College of Chemistry, Nankai University, Tianjin 300071 (China)] [Key Laboratory of Advanced Energy Materials Chemistry (MOE), College of Chemistry, Nankai University, Tianjin 300071 (China); Wang, Zhiqiang, E-mail: zqwang@mail.nankai.edu.cn [Key Laboratory of Advanced Energy Materials Chemistry (MOE), College of Chemistry, Nankai University, Tianjin 300071 (China) [Key Laboratory of Advanced Energy Materials Chemistry (MOE), College of Chemistry, Nankai University, Tianjin 300071 (China); Tianjin Key Laboratory of Water Environment and Resources, Tianjin Normal University, No. 393 Binshui Road, Xiqing Dist., Tianjin 300387 (China); Zhang, Minghui, E-mail: zhangmh@nankai.edu.cn [Key Laboratory of Advanced Energy Materials Chemistry (MOE), College of Chemistry, Nankai University, Tianjin 300071 (China)] [Key Laboratory of Advanced Energy Materials Chemistry (MOE), College of Chemistry, Nankai University, Tianjin 300071 (China)

2012-10-15T23:59:59.000Z

246

Partial oxidation of lower alkanes by active lattice oxygen of metal oxide systems: 2. Synthesis of solid contacts and syngas production in a pilot plant with a riser reactor  

Science Journals Connector (OSTI)

Metal oxide systems with a high lattice-oxygen content, which exhibit reversibility of oxidationreduction transitions, have been synthesized and characterized. Oxidant Solid Contacts have been prepared using t...

I. M. Gerzeliev; N. Ya. Usachev; A. Yu. Popov; S. N. Khadzhiev

2012-09-01T23:59:59.000Z

247

Effect of pre-oxidation and environmental aging on the seal strength of a novel high-temperature solid oxide fuel cell (SOFC) sealing glass with metallic interconnect  

SciTech Connect (OSTI)

A novel high-temperature alkaline-earth silicate sealing glass was developed for solid oxide fuel cell (SOFC) applications. The glass was used to join two ferritic stainless steel coupons for strength evaluation. The steel coupons were pre-oxidized at elevated temperatures to promote thick oxide layers to simulate long-term exposure conditions. In addition, seals to as-received metal coupons were also tested after aging in oxidizing or reducing environments to simulate the actual SOFC environment. Room temperature tensile testing showed strength degradation when using pre-oxidized coupons, and more extensive degradation after aging in air. Fracture surface and microstructural analysis confirmed that the cause of degradation was formation of SrCrO4 at the outer sealing edges exposed to air.

Chou, Y. S.; Stevenson, Jeffry W.; Singh, Prabhakar

2008-09-15T23:59:59.000Z

248

Effect of hydrogen sulfide on chemical looping combustion of coal-derived synthesis gas over bentonite-supported metal-oxide oxygen carriers  

SciTech Connect (OSTI)

The effect of hydrogen sulfide (H{sub 2}S) on the chemical looping combustion of coal-derived synthesis gas with bentonite-supported metal oxides - such as iron oxide, nickel oxide, manganese oxide, and copper oxide - was investigated by thermogravimetric analysis, mass spectrometry, and X-ray photoelectron spectroscopy (XPS). During the reaction with synthesis gas containing H{sub 2}S, metal-oxide oxygen carriers were first reduced by carbon monoxide and hydrogen, and then interacted with H{sub 2}S to form metal sulfide, which resulted in a weight gain during the reduction/sulfidation step. The reduced/sulfurized compounds could be regenerated to form sulfur dioxide and oxides during the oxidation reaction with air. The reduction/oxidation capacities of iron oxide and nickel oxide were not affected by the presence of H{sub 2}S, but both manganese oxide and copper oxide showed decreased reduction/oxidation capacities. However, the rates of reduction and oxidation decreased in the presence of H{sub 2}S for all four metal oxides.

Tian, H.J.; Simonyi, T.; Poston, J.; Siriwardane, R. [US DOE, Morgantown, WV (United States). National Energy Technology Laboratory

2009-09-15T23:59:59.000Z

249

Water growth on metals and oxides: binding, dissociation and role of hydroxyl groups  

SciTech Connect (OSTI)

The authors discuss the role of the presence of dangling H bonds from water or from surface hydroxyl species on the wetting behavior of surfaces. Using Scanning Tunneling and Atomic Force Microscopies, and Photoelectron Spectroscopy, they have examined a variety of surfaces, including mica, oxides, and pure metals. They find that in all cases, the availability of free, dangling H-bonds at the surface is crucial for the subsequent growth of wetting water films. In the case of mica electrostatic forces and H-bonding to surface O atoms determine the water orientation in the first layer and also in subsequent layers with a strong influence in its wetting characteristics. In the case of oxides like TiO{sub 2}, Cu{sub 2}O, SiO{sub 2} and Al{sub 2}O{sub 3}, surface hydroxyls form readily on defects upon exposure to water vapor and help nucleate the subsequent growth of molecular water films. On pure metals, such as Pt, Pd, and Ru, the structure of the first water layer and whether or not it exhibits dangling H bonds is again crucial. Dangling H-bonds are provided by molecules with their plane oriented vertically, or by OH groups formed by the partial dissociation of water. By tying the two II atoms of the water molecules into strong H-bonds with pre-adsorbed O on Ru can also quench the wettability of the surface.

Salmeron, M.; Bluhm, H.; Tatarkhanov, M.; Ketteler, G.; Shimizu, T.K.; Mugarza, A.; Deng, Xingyi; Herranz, T.; Yamamoto, S.; Nilsson, A.

2008-09-01T23:59:59.000Z

250

Ab initio study of lithium intercalation in metal oxides and metal dichalcogenides M. K. Aydinol, A. F. Kohan, and G. Ceder  

E-Print Network [OSTI]

-metal-oxides due to their application potential as rechargeable battery electrodes1 and electrochromic displays.2. In electrochromic applications, band filling is used to adjust the electronic and optical properties.3 Figure 1-potential difference between cathode and anode is desirable as this leads to a high OCV. For electrochromic

Ceder, Gerbrand

251

Variable temperature semiconductor film deposition  

DOE Patents [OSTI]

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Li, X.; Sheldon, P.

1998-01-27T23:59:59.000Z

252

Disposition of Uranium -233 (sup 233U) in Plutonium Metal and Oxide at the Rocky Flats Environmental Technology Site  

SciTech Connect (OSTI)

This report documents the position that the concentration of Uranium-233 ({sup 233}U) in plutonium metal and oxide currently stored at the DOE Rocky Flats Environmental Technology Site (RFETS) is well below the maximum permissible stabilization, packaging, shipping and storage limits. The {sup 233}U stabilization, packaging and storage limit is 0.5 weight percent (wt%), which is also the shipping limit maximum. These two plutonium products (metal and oxide) are scheduled for processing through the Building 371 Plutonium Stabilization and Packaging System (PuSPS). This justification is supported by written technical reports, personnel interviews, and nuclear material inventories, as compiled in the ''History of Uranium-233 ({sup 233}U) Processing at the Rocky Flats Plant In Support of the RFETS Acceptable Knowledge Program'' RS-090-056, April 1, 1999. Relevant data from this report is summarized for application to the PuSPS metal and oxide processing campaigns.

Freiboth, Cameron J.; Gibbs, Frank E.

2000-03-01T23:59:59.000Z

253

Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si  

SciTech Connect (OSTI)

When metal electrodes are deposited on a high-{kappa} metal-oxide/SiO{sub 2}/Si stack, chemical interactions may occur both at the metal/high-{kappa} and the high-{kappa}/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO{sub 2}/SiO{sub 2}/Si stacks causes reduction of the SiO{sub 2} interfacial layer and (to a lesser extent) the HfO{sub 2} layer. Silicon atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for titanium-silicon interdiffusion through the high-{kappa} film in the presence of a titanium gate in crystalline HfO{sub 2} films is also reported.

Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny [Departments of Physics and Chemistry, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854 (United States); Lysaght, Pat S.; Bersuker, Gennadi I. [Sematech, Austin, Texas 78741 (United States)

2007-09-26T23:59:59.000Z

254

Method and apparatus for preparation of spherical metal carbonates and lithium metal oxides for lithium rechargeable batteries  

DOE Patents [OSTI]

A number of materials with the composition Li.sub.1+xNi.sub..alpha.Mn.sub..beta.Co.sub..gamma.M'.sub..delta.O.sub.2-- zF.sub.z (M'=Mg,Zn,Al,Ga,B,Zr,Ti) for use with rechargeable batteries, wherein x is between about 0 and 0.3, .alpha. is between about 0.2 and 0.6, .beta. is between about 0.2 and 0.6, .gamma. is between about 0 and 0.3, .delta. is between about 0 and 0.15, and z is between about 0 and 0.2. Adding the above metal and fluorine dopants affects capacity, impedance, and stability of the layered oxide structure during electrochemical cycling. Another aspect of the invention includes materials with the composition Li.sub.1+xNi.sub..alpha.Co.sub..beta.Mn.sub..gamma.M'.sub..delta.O.sub.yF- .sub.z (M'=Mg,Zn,Al,Ga,B,Zr,Ti), where the x is between 0 and 0.2, the .alpha. between 0 and 1, the .beta. between 0 and 1, the .gamma. between 0 and 2, the .delta. between about 0 and about 0.2, the y is between 2 and 4, and the z is between 0 and 0.5.

Kang, Sun-Ho (Naperville, IL); Amine, Khalil (Downers Grove, IL)

2008-10-14T23:59:59.000Z

255

Use of high-temperature gas-tight electrochemical cells to measure electronic transport and thermodynamics in metal oxides  

SciTech Connect (OSTI)

By using a gas-tight electrochemical cell, the authors can perform high-temperature coulometric titration and measure electronic transport properties to determine the electronic defect structure of metal oxides. This technique reduces the time and expense required for conventional thermogravimetric measurements. The components of the gas-tight coulometric titration cell are an oxygen sensor, Pt/yttria stabilized zirconia (YSZ)/Pt, and an encapsulated metal oxide sample. Based on cell design, both transport and thermodynamic measurements can be performed over a wide range of oxygen partial pressures (pO{sub 2} = 10{sup {minus}35} to 1 atm). This paper describes the high-temperature gas-tight electrochemical cells used to determine electronic defect structures and transport properties for pure and doped-oxide systems, such as YSZ, doped and pure ceria (Ca-CeO{sub 2} and CeO{sub 2}), copper oxides, and copper-oxide-based ceramic superconductors, transition metal oxides, SrFeCo{sub 0.5}O{sub x}, and BaTiO{sub 3}.

Park, J.H.; Ma, B.; Park, E.T. [Argonne National Lab., IL (United States). Energy Technology Div.

1997-10-01T23:59:59.000Z

256

Design Principles for Oxygen-Reduction Activity on Perovskite Oxide Catalysts for Fuel Cells and Metal-air Batteries  

SciTech Connect (OSTI)

The prohibitive cost and scarcity of the noble-metal catalysts needed for catalysing the oxygen reduction reaction (ORR) in fuel cells and metal-air batteries limit the commercialization of these clean-energy technologies. Identifying a catalyst design principle that links material properties to the catalytic activity can accelerate the search for highly active and abundant transition-metal-oxide catalysts to replace platinum. Here, we demonstrate that the ORR activity for oxide catalysts primarily correlates to {sigma}*-orbital (e{sub g}) occupation and the extent of B-site transition-metal-oxygen covalency, which serves as a secondary activity descriptor. Our findings reflect the critical influences of the {sigma}* orbital and metal-oxygen covalency on the competition between O{sub 2}{sup 2-}/OH{sup -} displacement and OH{sup -} regeneration on surface transition-metal ions as the rate-limiting steps of the ORR, and thus highlight the importance of electronic structure in controlling oxide catalytic activity.

J Suntivich; H Gasteiger; N Yabuuchi; H Nakanishi; J Goodenough; Y Shao-Horn

2011-12-31T23:59:59.000Z

257

Effect of hydrogen sulfide on chemical looping of coal-derived synthesis gas over bentonite-supported metal---oxide oxygen carriers  

SciTech Connect (OSTI)

The effect of hydrogen sulfide (H2S) on the chemical looping combustion of coal-derived synthesis gas with bentonite-supported metal oxidesssuch as iron oxide, nickel oxide, manganese oxide, and copper oxideswas investigated by thermogravimetric analysis, mass spectrometry, and X-ray photoelectron spectroscopy (XPS). During the reaction with synthesis gas containing H2S, metal-oxide oxygen carriers were first reduced by carbon monoxide and hydrogen, and then interacted with H2S to form metal sulfide, which resulted in a weight gain during the reduction/sulfidation step. The reduced/sulfurized compounds could be regenerated to form sulfur dioxide and oxides during the oxidation reaction with air. The reduction/oxidation capacities of iron oxide and nickel oxide were not affected by the presence of H2S, but both manganese oxide and copper oxide showed decreased reduction/oxidation capacities. However, the rates of reduction and oxidation decreased in the presence of H2S for all four metal oxides.

Tian, H.; Simonyi, T.; Poston, J.; Siriwardane, R.

2009-01-01T23:59:59.000Z

258

HEU to LEU conversion and blending facility: Metal blending alternative to produce LEU oxide for disposal  

SciTech Connect (OSTI)

US DOE is examining options for disposing of surplus weapons-usable fissile materials and storage of all weapons-usable fissile materials. The nuclear material is converted to a form more proliferation- resistant than the original form. Blending HEU (highly enriched uranium) with less-enriched uranium to form LEU has been proposed as a disposition option. Five technologies are being assessed for blending HEU. This document provides data to be used in environmental impact analysis for the HEU-LEU disposition option that uses metal blending with an oxide waste product. It is divided into: mission and assumptions, conversion and blending facility descriptions, process descriptions and requirements, resource needs, employment needs, waste and emissions from plant, hazards discussion, and intersite transportation.

NONE

1995-09-01T23:59:59.000Z

259

Performance and degradation of metal-supported solid oxide fuel cells with impregnated electrodes  

Science Journals Connector (OSTI)

Abstract Metal-supported solid oxide fuel cells (MS-SOFCs) containing porous 430L stainless steel supports, YSZ electrolytes and porous YSZ cathode backbones are fabricated by tape casting, laminating and co-firing in a reducing atmosphere. Nano-scale Ni and La0.6Sr0.4Fe0.9Sc0.1O3?? (LSFSc) coatings are impregnated onto the internal surfaces of porous 430L and YSZ, acting as the anode and the cathode catalysts, respectively. The resulting MS-SOFCs exhibit maximum power densities of 193, 418, 636 and 907 mW cm?2 at 650, 700, 750 and 800 °C, respectively. Nevertheless, a continuous degradation in the fuel cell performance is observed at 650 °C and 0.7 V during a 200-h durability measurement. Possible degradation mechanisms were discussed in detail.

Yucun Zhou; Xianshuang Xin; Junliang Li; Xiaofeng Ye; Changrong Xia; Shaorong Wang; Zhongliang Zhan

2014-01-01T23:59:59.000Z

260

Spectroscopic Studies of O-Vacancy Defects in Transition Metal Oxides  

SciTech Connect (OSTI)

Dielectrics comprised of nano-crystalline HfO{sub 2} in gate stacks with thin SiO{sub 2}/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO{sub 2} and other transition metal elemental oxides are assigned to O-atom divacancies clustered at internal grain boundaries of nano-crystalline films. Engineering solutions in which grain boundary defects are suppressed include: (i) ultra-thin, <2 nm, HfO{sub 2} fims, (ii) chemically phase separated high HfO2 content silicate films, and (iii) non-crystalline Zr/Hf Si oxynitride films.

Lucovsky, G.; Luning, J.; Fleming, L.B.; Ulrich, M.D.; Rowe, J.E.; Seo, H.; Lee, S.; Lysaght, P.; Bersuker, G.

2009-06-03T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Corrosion and Protection of Metallic Interconnects in Solid Oxide Fuel Cells  

SciTech Connect (OSTI)

Energy security and increased concern over environmental protection have spurred a dramatic world-wide growth in research and development of fuel cells, which electrochemically convert incoming fuel into electricity with no or low pollution. Fuel cell technology has become increasingly attractive to a number of sectors, including utility, automotive, and defense industries. Among the various types of fuel cells, solid oxide fuel cells (SOFCs) operate at high temperature (typically 650-1,000 C) and have advantages in terms of high conversion efficiency and the flexibility of using hydrocarbon fuels, in addition to hydrogen. The high temperature operation, however, can lead to increased mass transport and interactions between the surrounding environment and components that are required to be stable during a lifetime of thousands of hours and up to hundreds of thermal cycles. For stacks with relatively low operating temperatures (<800 C), the interconnects that are used to electrically connect a number of cells in series are typically made from cost-effective metals or alloys. The metallic interconnects must demonstrate excellent stability in a very challenging environment during SOFC operation, as they are simultaneously exposed to both an oxidizing (air) environment on the cathode side and a reducing environment (hydrogen or a reformed hydrocarbon fuel) on the anode side. Other challenges include the fact that water vapor is likely to be present in both of these environments, and the fuel is likely to contain impurities, such as sulfides. Since the fuel is usually a reformed hydrocarbon fuel, such as natural gas, coal gas, biogas, gasoline, etc., the interconnect is exposed to a wet carbonaceous environment at the anode side. Finally, the interconnect must be stable towards any adjacent components, such as electrodes, seals and electrical contact materials, with which it is in physical contact.

Yang, Z Gary; Stevenson, Jeffry W.; Singh, Prabhakar

2007-12-09T23:59:59.000Z

262

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design  

SciTech Connect (OSTI)

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45?nm × 45?nm round MTJs for the magnetic part and 28?nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

Jovanovi?, B., E-mail: bojan.jovanovic@lirmm.fr, E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L. [LIRMM—University of Montpellier 2/UMR CNRS 5506, 161 Rue Ada, 34095 Montpellier (France)

2014-04-07T23:59:59.000Z

263

Performance analysis of boron nitride embedded armchair graphene nanoribbon metal–oxide–semiconductor field effect transistor with Stone Wales defects  

SciTech Connect (OSTI)

We study the performance of a hybrid Graphene-Boron Nitride armchair nanoribbon (a-GNR-BN) n-MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p + 1, and 3p + 2 of a-GNR-BN with BN atoms embedded on either side (2, 4, and 6 BN) on the GNR. Material properties like band gap, effective mass, and density of states of these H-passivated structures are evaluated using the Density Functional Theory. Using these material parameters, self-consistent Poisson-Schrodinger simulations are carried out under the Non Equilibrium Green's Function formalism to calculate the ballistic n-MOSFET device characteristics. For a hybrid nanoribbon of width ?5?nm, the simulated ON current is found to be in the range of 265??A–280??A with an ON/OFF ratio 7.1 × 10{sup 6}–7.4 × 10{sup 6} for a V{sub DD}?=?0.68?V corresponding to 10?nm technology node. We further study the impact of randomly distributed Stone Wales (SW) defects in these hybrid structures and only 2.5% degradation of ON current is observed for SW defect density of 3.18%.

Chanana, Anuja; Sengupta, Amretashis; Mahapatra, Santanu [Nano Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560 012 (India)

2014-01-21T23:59:59.000Z

264

Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

Optical methods for measuring of the emission spectra of oscillator circuits operating in the 400–600 GHz range are described. The emitted power from patch antennas included in the circuits is measured by placing the circuit in the source chamber of a Fourier-transform interferometric spectrometer. The results show that this optical technique is useful for measuring circuits pushing the frontier in operating frequency. The technique also allows the characterization of the circuit by measuring the power radiated in the fundamental and in the harmonics. This capability is useful for oscillator architectures designed to cancel the fundamental and use higher harmonics. The radiated power was measured using two techniques: direct measurement of the power by placing the device in front of a bolometer of known responsivity, and by comparison to the estimated power from blackbody sources. The latter technique showed that these circuits have higher emission than blackbody sources at the operating frequencies, and, therefore, offer potential spectroscopy applications.

Arenas, D. J. [Univ. of North Florida, Jacksonville, FL (United States); Shim, Dongha [Univ. of Florida, Gainesville, FL (United States); Koukis, D. I. [Univ. of Florida, Gainesville, FL (United States); Seok, Eunyoung [Univ. of Florida, Gainesville, FL and Texas Instruments, Dallas, TX (United States); Tanner, D. B. [Univ. of Florida, Gainesville, FL (United States); O, Kenneth K. [Univ. of Texas, Dallas, TX (United States)

2011-10-24T23:59:59.000Z

265

High-temperature corrosion of metallic alloys in an oxidizing atmosphere containing NaCl  

SciTech Connect (OSTI)

A particular heat-exchanger application involved metallic alloys exposed to flue gases of an aluminum remelt furnace. Because the flue gases might contain NaCl and other halides, the corrosion behavior of the alloys was to be investigated. Planned direct exposure of candidate alloys to the flue gases, however, was not conducted because of premature termination of the project. Complementary laboratory testing was conducted on seven commercially available alloys and two nickel aluminides. These materials were exposed to an oxidizing atmosphere containing 0.06 wt % NaCl for 1100 h at 1000/degree/C. Most of the alloy exhibited grain-boundary attack, which resulted in complete oxidation of enveloped grains. The alloys Incoloy MA-956, Incoloy 800, Inconel 625, Inconel 601, Hastelloy X, Haynes 188, and nickel aluminide IC-50 were substantially more corroded than Alloy 214 and nickel aluminide IC-221. The latter two alloys, therefore, would probably be superior to the others in application involving flue gases containing NaCl. Strength fabricability, and weldability, which are briefly discussed, would also affect selection of materials. 8 refs., 12 figs., 5 tabs.

Federer, J.I.

1989-02-01T23:59:59.000Z

266

Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks  

SciTech Connect (OSTI)

The properties of high-{kappa} metal oxide gate stacks are often determined in the final processing steps following dielectric deposition. We report here results from medium energy ion scattering and x-ray photoelectron spectroscopy studies of oxygen and silicon diffusion and interfacial layer reactions in multilayer gate stacks. Our results show that Ti metallization of HfO{sub 2}/SiO{sub 2}/Si stacks reduces the SiO{sub 2} interlayer and (to a more limited extent) the HfO{sub 2} layer. We find that Si atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for Ti-Si interdiffusion through the high-{kappa} film in the presence of a Ti gate in the crystalline HfO{sub 2} films is also reported. This diffusion is likely to be related to defects in crystalline HfO{sub 2} films, such as grain boundaries. High-resolution transmission electron microscopy and corresponding electron energy loss spectroscopy scans show aggressive Ti-Si intermixing and oxygen diffusion to the outermost Ti layer, given high enough annealing temperature. Thermodynamic calculations show that the driving forces exist for some of the observed diffusion processes.

Goncharova, L. V.; Dalponte, M.; Gustafsson, T.; Celik, O.; Garfunkel, E.; Lysaght, P. S.; Bersuker, G. [Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, 136 Frelinghuysen Rd., Piscataway, New Jersey 08854 (United States); Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, 610 Taylor Rd., Piscataway, New Jersey 08854 (United States); SEMATECH, 2705 Montopolis Dr., Austin, Texas 78741 (United States)

2007-03-15T23:59:59.000Z

267

INFLUENCE OF OXIDE GROWTH AND METAL CREEP ON STRAIN DEVELOPMENT IN THE STEAM-SIDE OXIDE IN BOILER TUBES  

SciTech Connect (OSTI)

This effort is concerned with developing a quantitative description of the exfoliation behavior of oxide scales grown inside steam tubes in a pressure boiler. Consideration of the development of stress/strain in growing oxides has included expansion mismatch-induced strains during thermal cycling as well as inelastic mechanical effects from oxide/alloy creep phenomena and volume change from oxide growth. The magnitude of the parameters used has been closely matched to actual boiler operating practice. The creep model used was validated against published data. Representation of oxide growth-induced strain was found to be a difficult challenge because the processes involved are not fully understood. In addition to the traditional uniaxial (radial) and dilatational models, lateral growth models are discussed in the context of experimentally-derived criteria, such as the level of elastic strains involved in oxide exfoliation. It was found that strain variation in the oxide cannot be neglected.

Sabau, Adrian S [ORNL; Wright, Ian G [ORNL

2010-01-01T23:59:59.000Z

268

ADVERTISEMENT SEMICONDUCTORS  

E-Print Network [OSTI]

ADVERTISEMENT SEMICONDUCTORS: 07.14.2010 Nano-enabled Coating Makes Aircraft Invisible Humble paint... The oil-separating centrifuges will work, but they... MORE FROM IEEE SPECTRUM ROBOTICS: 06.16.2010 Robo.01.2006 Look Out, Beckham: Here Come the Robots At the "World Cup" for robots, the talk is that one day

Stryk, Oskar von

269

Sandia National Labs: PCNSC: Departments: Semiconductor and Optical  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Semiconductor & Optical Sciences Semiconductor & Optical Sciences > Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering Research Jeff Nelson Jerry A. Simmons Sr. Manager Idabelle Idabelle Courtney Admin. Asst. Departments Semiconductor and Optical Sciences The Semiconductor and Optical Sciences Department oversees the operations of the following departments providing new scientific knowledge that can lead to technology solutions in the areas of: Compound semiconductor optoelectronic materials and devices Chemical science to materials technologies, emphasizing the science and engineering of Metal Organic Chemical Vapor Deposition (MOCVD) Remote sensing and detection of WMD proliferation activities

270

Promises and problems with metallic interconnects for reduced temperature solid oxide fuel cells  

E-Print Network [OSTI]

Symposium on Solid Oxide Fuel Cells (SOFC-VI) ed. S. C.FOR REDUCED TEMPERATURE SOLID OXIDE FUEL CELLS Peggy Y. Hou,for low temperature solid oxide fuel cell is discussed in

Hou, Peggy Y.; Huang, Keqin; Bakker, Wate T.

1999-01-01T23:59:59.000Z

271

Rapid thermal cycling of metal-supported solid oxide fuel cell membranes  

E-Print Network [OSTI]

effect of pressure on solid oxide fuel cell performance," inand flat plate solid oxide fuel cells," in Proceedings ofSymposium on Solid Oxide Fuel Cells. Electrochem. Soc. 1993,

Matus, Yuriy B.; De Jonghe, Lutgard C.; Jacobson, Craig P.; Visco, Steven J.

2004-01-01T23:59:59.000Z

272

Development and Field-Scale Optimization of a Honeycomb Zeolite Rotor Concentrator/Recuperative Oxidizer for the Abatement of Volatile Organic Carbons from Semiconductor Industry  

Science Journals Connector (OSTI)

Also the developed rotor performance’s was evaluated in the field; (2) Direct Fired Thermal Oxidizer (DFTO), Recuperative Oxidizer (RO), Regenerative Thermal Oxidizer (RTO) and Regenerative Catalytic oxidizer (RCO) are the available incinerators and the RO was selected as the oxidizer in this work; (3) The overall performance of the developed rotor/oxidizer was explored in a field scale under varying conditions; (4) The energy saving strategy was fulfilled by reducing heat loss from the oxidizer and recovering heat from the exhaust gas. ... The available types of oxidizers include Direct Fired Thermal Oxidizer (DFTO), Recuperative Oxidizer (RO), Regenerative Thermal Oxidizer (RTO) and Regenerative Catalytic oxidizer (RCO). ... cost models were derived for recuperative thermal (TO) and regenerative thermal oxidizers (RTO). ...

Ji Yang; Yufeng Chen; Limei Cao; Yuling Guo; Jinping Jia

2011-11-17T23:59:59.000Z

273

Solution-mediated strategies for synthesizing metal oxides, borates and phosphides using nanocrystals as reactive precursors  

E-Print Network [OSTI]

substrates can be transformed into their corresponding phosphides. Furthermore, this strategy is applicable towards the conversion of supported metal nanocrystals into metal phosphides. Supported metal phosphides are used as hydrotreating catalysts...

Henkes, Amanda Erin

2009-05-15T23:59:59.000Z

274

Oxidation of Metals, Vol. 61, Nos. 3/4, April 2004 ( 2004) Thermal Conductivity, Phase Stability, and Oxidation  

E-Print Network [OSTI]

, and Oxidation Resistance of Y3Al5O12 (YAG)/Y2O3­ZrO2 (YSZ) Thermal-Barrier Coatings Y. J. Su, R. W. Trice,# K oxidation resistance while maintaining low thermal conductivity and good phase stability. Padture) is proposed. The objective of this work is to quantify the effect of YAG on thermal resistance, long

Trice, Rodney W.

275

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in  

E-Print Network [OSTI]

-abundant, non-toxic, and air-stable materials represent a promising class of photovoltaic (PV) devices for cost-effective manufacturing. Earth- abundant metal-oxide semiconductors comprise an attractive set of materials for photovoltaic applications, given their auspicious optoelec- tronic properties and chemical

276

Safety and core design of large liquid-metal cooled fast breeder reactors  

E-Print Network [OSTI]

Absorption Metal (Zr) Metal (Mo) Carbide Nitride Oxidef /? a k ? Metal (Zr) Metal (Mo) Carbide Nitride Oxide Table? a k ? Metal (Zr) Metal (Mo) Carbide Nitride Oxide CHAPTER

Qvist, Staffan Alexander

2013-01-01T23:59:59.000Z

277

Catalytic photooxidation of pentachlorophenol using semiconductor nanoclusters  

SciTech Connect (OSTI)

Pentachlorophenol (PCP) is a toxic chlorinated aromatic molecule widely used as fungicide, a bactericide and a wood preservation, and thus ubiquitous in the environment. The authors report photo-oxidation of PCP using a variety of nanosize semiconductor metal oxides and sulfides in both aqueous and polar organic solvents and compare the photo-oxidation kinetics of these nanoclusters to widely studied bulk powders like Degussa P-25 TiO{sub 2} and CdS. They study both the light intensity dependence of PCP photooxidation for nanosize SnO{sub 2} and the size dependence of PCP photooxidation for both nanosize SnO{sub 2} and MoS{sub 2}. They find an extremely strong size dependence for the latter which they attribute to its size-dependent band gap and the associated change in redox potentials due to quantum confinement of the hole-electron pair. The authors show that nanosize MoS{sub 2} with a diameter of d=3.0 nm and an absorbance edge of {approximately}450 nm is a very effective photooxidation catalyst for complete PCP mineralization, even when using only visible light irradiation.

WILCOXON,JESS P.

2000-04-17T23:59:59.000Z

278

High-Temperature Zirconia Oxygen Sensor with Sealed Metal/Metal...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

High-Temperature Zirconia Oxygen Sensor with Sealed MetalMetal Oxide Internal Reference High-Temperature Zirconia Oxygen Sensor with Sealed MetalMetal Oxide Internal Reference...

279

Improved layered mixed transition metal oxides for Li-ion batteries  

SciTech Connect (OSTI)

Recent work in our laboratory has been directed towards development of mixed layered transition metal oxides with general composition Li[Ni, Co, M, Mn]O2 (M=Al, Ti) for Li ion battery cathodes. Compounds such as Li[Ni1/3Co1/3Mn1/3]O2 (often called NMCs) are currently being commercialized for use in consumer electronic batteries, but the high cobalt content makes them too expensive for vehicular applications such as electric vehicles (EV), plug-in hybrid electric vehicles (PHEVs), or hybrid electric vehicles (HEVs). To reduce materials costs, we have explored partial or full substitution of Co with Al, Ti, and Fe. Fe substitution generally decreases capacity and results in poorer rate and cycling behavior. Interestingly, low levels of substitution with Al or Ti improve aspects of performance with minimal impact on energy densities, for some formulations. High levels of Al substitution compromise specific capacity, however, so further improvements require that the Ni and Mn content be increased and Co correspondingly decreased. Low levels of Al or Ti substitution can then be used offset negative effects induced by the higher Ni content. The structural and electrochemical characterization of substituted NMCs is presented in this paper.

Doeff, Marca M.; Conry, Thomas; Wilcox, James

2010-03-05T23:59:59.000Z

280

Final LDRD report : metal oxide films, nanostructures, and heterostructures for solar hydrogen production.  

SciTech Connect (OSTI)

The distinction between electricity and fuel use in analyses of global power consumption statistics highlights the critical importance of establishing efficient synthesis techniques for solar fuels-those chemicals whose bond energies are obtained through conversion processes driven by solar energy. Photoelectrochemical (PEC) processes show potential for the production of solar fuels because of their demonstrated versatility in facilitating optoelectronic and chemical conversion processes. Tandem PEC-photovoltaic modular configurations for the generation of hydrogen from water and sunlight (solar water splitting) provide an opportunity to develop a low-cost and efficient energy conversion scheme. The critical component in devices of this type is the PEC photoelectrode, which must be optically absorptive, chemically stable, and possess the required electronic band alignment with the electrochemical scale for its charge carriers to have sufficient potential to drive the hydrogen and oxygen evolution reactions. After many decades of investigation, the primary technological obstacle remains the development of photoelectrode structures capable of efficient conversion of light with visible frequencies, which is abundant in the solar spectrum. Metal oxides represent one of the few material classes that can be made photoactive and remain stable to perform the required functions.

Kronawitter, Coleman X. [Lawrence Berkeley National Laboratory, Berkeley, CA; Antoun, Bonnie R.; Mao, Samuel S. [Lawrence Berkeley National Laboratory, Berkeley, CA

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Degradation of solid oxide fuel cell metallic interconnects in fuels containing sulfur  

SciTech Connect (OSTI)

Hydrogen is the main fuel for all types of fuel cells except direct methanol fuel cells. Hydrogen can be generated from all manner of fossil fuels, including coal, natural gas, diesel, gasoline, other hydrocarbons, and oxygenates (e.g., methanol, ethanol, butanol, etc.). Impurities in the fuel can cause significant performance problems and sulfur, in particular, can decrease the cell performance of fuel cells, including solid oxide fuel cells (SOFC). In the SOFC, the high (800-1000°C) operating temperature yields advantages (e.g., internal fuel reforming) and disadvantages (e.g., material selection and degradation problems). Significant progress in reducing the operating temperature of the SOFC from ~1000 ºC to ~750 ºC may allow less expensive metallic materials to be used for interconnects and as balance of plant (BOP) materials. This paper provides insight on the material performance of nickel, ferritic steels, and nickel-based alloys in fuels containing sulfur, primarily in the form of H2S, and seeks to quantify the extent of possible degradation due to sulfur in the gas stream.

Ziomek-Moroz, M.; Hawk, Jeffrey A.

2005-01-01T23:59:59.000Z

282

Synthesis of Metal Oxide Nanomaterials for Chemical Sensors by Molecular Beam Epitaxy  

SciTech Connect (OSTI)

Since the industrial revolution, detection and monitoring of toxic matter, chemical wastes, and air pollutants has become an important environmental issue. Thus, it leads to the development of chemical sensors for various environmental applications. The recent disastrous oil spills over the near-surface of ocean due to the offshore drilling emphasize the use of chemical sensors for prevention and monitoring of the processes that might lead to these mishaps.1, 2 Chemical sensors operated on a simple principle that the sensing platform undergoes a detectable change when exposed to the target substance to be sensed. Among all the types of chemical sensors, solid state gas sensors have attracted a great deal of attention due to their advantages such as high sensitivity, greater selectivity, portability, high stability and low cost.3, 4 Especially, semiconducting metal oxides such as SnO2, TiO2, and WO3 have been widely used as the active sensing platforms in solid state gas sensors.5 For the enhanced properties of solid state gas sensors, finding new sensing materials or development of existing materials will be needed. Thus, nanostructured materials such as nanotubes,6-8 nanowires,9-11 nanorods,12-15 nanobelts,16, 17 and nano-scale thin films18-23 have been synthesized and studied for chemical sensing applications.

Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai

2013-12-01T23:59:59.000Z

283

Growth of monodisperse mesoscopic metal-oxide colloids under constant monomer supply  

Science Journals Connector (OSTI)

In closed systems, control over the size of monodisperse metal-oxide colloids is generally limited to submicrometric dimensions. To overcome this difficulty, we explore the formation and growth of silica particles under constant monomer supply. The monomer source is externally driven by the progressive addition into the system of one of the precursors. Monodisperse spherical particles are produced up to a mesoscopic size. We analyze their growth versus the monomer addition rate at different temperatures. Our results show that in the presence of a continuous monomer addition, growth is limited by diffusion over the investigated temporal window. Using the temperature variation of the growth rate, we prove that rescaling leads to a data reduction onto a single master curve. Contrary to the growth process, the final particle’s size reached after the end of the reagent supply strongly depends on the addition rate. The variation of the final particle size versus addition rate can be deduced from an analogy with crystal formation in jet precipitation. Within this framework, and using the temperature dependences of both the particle growth law and the final size, we determine the value of the molecular heat of dissolution associated to the silica solubility. These observations support the fact that classical theories of phase-ordering dynamics can be extended to the synthesis of inorganic particles. The emergence of a master behavior in the presence of continuous monomer addition also suggests the extension of these theories to open systems.

Koh Nozawa; Marie-Hélène Delville; Hideharu Ushiki; Pascal Panizza; Jean-Pierre Delville

2005-07-11T23:59:59.000Z

284

Doped palladium containing oxidation catalysts  

DOE Patents [OSTI]

A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

Mohajeri, Nahid

2014-02-18T23:59:59.000Z

285

Metallic Interconnects for Solid Oxide Fuel Cell: Performance of Reactive Element Oxide Coating During 10, 20 and 30 Months Exposure  

Science Journals Connector (OSTI)

One of challenges in improving the performance and cost-effectiveness of SOFCs (Solid Oxide Fuel Cells) is the development of suitable interconnect materials. Chromia-forming alloys and especially ferritic sta...

S. Fontana; S. Chevalier; G. Caboche

2012-12-01T23:59:59.000Z

286

Time-Resolved XAFS Spectroscopic Studies of B-H and N-H Oxidative Addition to Transition Metal Catalysts Relevant to Hydrogen Storage  

SciTech Connect (OSTI)

Successful catalytic dehydrogenation of aminoborane, H3NBH3, prompted questions as to the potential role of N-H oxidative addition in the mechanisms of these processes. N-H oxidative addition reactions are rare, and in all cases appear to involve initial dative bonding to the metal by the amine lone pairs followed by transfer of a proton to the basic metal. Aminoborane and its trimethylborane derivative block this mechanism and, in principle, should permit authentic N-H oxidative attrition to occur. Extensive experimental work failed to confirm this hypothesis. In all cases either B-H complexation or oxidative addition of solvent C-H bonds dominate the chemistry.

Bitterwolf, Thomas E. [University of Idaho

2014-12-09T23:59:59.000Z

287

Multilayered thermal insulation formed of zirconia bonded layers of zirconia fibers and metal oxide fibers and method for making same  

DOE Patents [OSTI]

A multilayered thermal insulating composite is formed of a first layer of zirconia-bonded zirconia fibers for utilization near the hot phase or surface of a furnace or the like. A second layer of zirconia-bonded metal oxide fibers is attached to the zirconia fiber layer by a transition layer formed of intermingled zirconia fibers and metal oxide fibers. The thermal insulation is fabricated by vacuum molding with the layers being sequentially applied from aqueous solutions containing the fibers to a configured mandrel. A portion of the solution containing the fibers forming the first layer is intermixed with the solution containing the fibers of the second layer for forming the layer of mixed fibers. The two layers of fibers joined together by the transition layer are saturated with a solution of zirconium oxynitrate which provides a zirconia matrix for the composite when the fibers are sintered together at their nexi.

Wrenn, Jr., George E. (Clinton, TN); Holcombe, Jr., Cressie E. (Farragut, TN)

1988-01-01T23:59:59.000Z

288

Electric pulse induced resistance change effect in manganites due to polaron localization at the metal-oxide interfacial region  

Science Journals Connector (OSTI)

Combining pulse-probe measurements as well as local transport measurements in an electron microscope system by a simultaneous monitoring of the structural changes, we show that the nonvolatile electric pulse induced resistance change in Ca-doped praseodymium manganite is related to a polaron order-disorder transition, modified by electronic band bending in the vicinity of an interface to a metallic electrode. A pronounced resistance change requires a critical distance between the two electrode and/or oxide interfaces to form an insulating incommensurate polaron-ordered phase during the initialization of the device. Based on these observations, a qualitative model for the electronic structure of the metal-oxide interface is developed.

Ch. Jooss, J. Hoffmann, J. Fladerer, M. Ehrhardt, T. Beetz, L. Wu, and Y. Zhu

2008-04-23T23:59:59.000Z

289

Scaling properties in the adsorption of ionic polymeric surfactants on generic nanoparticles of metallic oxides by mesoscopic simulation  

E-Print Network [OSTI]

We study the scaling of adsorption isotherms of polyacrylic dispersants on generic surfaces of metallic oxides $XnOm$ as a function of the number of monomeric units, using Electrostatic Dissipative Particle Dynamics simulations. The simulations show how the scaling properties in these systems emerge and how the isotherms rescale to a universal curve, reproducing reported experimental results. The critical exponent for these systems is also obtained, in perfect agreement with the scaling theory of deGennes. Some important applications are mentioned.

E. Mayoral; E. Nahmad-Achar

2014-02-11T23:59:59.000Z

290

Photocatalysis Using Semiconductor Nanoclusters  

SciTech Connect (OSTI)

We report on experiments using nanosize MoS{sub 2} to photo-oxidize organic pollutants in water using visible light as the energy source. We have demonstrated that we can vary the redox potentials and absorbance characteristics of these small semiconductors by adjusting their size, and our studies of the photooxidation of organic molecules have revealed that the rate of oxidation increases with increasing bandgap (i.e. more positive valence band and more negative conduction band potentials). Because these photocatalysis reactions can be performed with the nanoclusters fully dispersed and stable in solution, liquid chromatography can be used to determine both the intermediate reaction products and the state of the nanoclusters during the reaction. We have demonstrated that the MoS{sub 2} nanoclusters remain unchanged during the photooxidation process by this technique. We also report on studies of MoS{sub 2} nanoclusters deposited on TiO{sub 2} powder.

Thurston, T.R.; Wilcoxon,J.P.

1999-01-21T23:59:59.000Z

291

Geochemical, metagenomic and metaproteomic insights into trace metal utilization by methane-oxidizing microbial consortia in sulfidic marine sediments  

SciTech Connect (OSTI)

Microbes have obligate requirements for trace metals in metalloenzymes that catalyze important biogeochemical reactions. In anoxic methane- and sulfide-rich environments, microbes may have unique adaptations for metal acquisition and utilization due to decreased bioavailability as a result of metal sulfide precipitation. However, micronutrient cycling is largely unexplored in cold ( 10 C) and sulfidic (>1 mM H2S) deep-sea methane seep ecosystems. We investigated trace metal geochemistry and microbial metal utilization in methane seeps offshore Oregon and California, USA, and report dissolved concentrations of nickel (0.5-270 nM), cobalt (0.5-6 nM), molybdenum (10-5,600 nM) and tungsten (0.3-8 nM) in Hydrate Ridge sediment porewaters. Despite low levels of cobalt and tungsten, metagenomic and metaproteomic data suggest that microbial consortia catalyzing anaerobic oxidation of methane utilize both scarce micronutrients in addition to nickel and molybdenum. Genetic machinery for cobalt-containing vitamin B12 biosynthesis was present in both anaerobic methanotrophic archaea (ANME) and sulfate-reducing bacteria (SRB). Proteins affiliated with the tungsten-containing form of formylmethanofuran dehydrogenase were expressed in ANME from two seep ecosystems, the first evidence for expression of a tungstoenzyme in psychrotolerant microorganisms. Finally, our data suggest that chemical speciation of metals in highly sulfidic porewaters may exert a stronger influence on microbial bioavailability than total concentration

Glass, DR. Jennifer [California Institute of Technology, Pasadena; Yu, DR. Hang [California Institute of Technology, Pasadena; Steele, Joshua [California Institute of Technology, Pasadena; Dawson, Katherine [California Institute of Technology, Pasadena; Sun, S [University of California, San Diego; Chourey, Karuna [ORNL; Hettich, Robert {Bob} L [ORNL; Orphan, V [California Institute of Technology, Pasadena

2014-01-01T23:59:59.000Z

292

Product/metal ratio (PMR): A novel criterion for the evaluation of electrolytes on micro-arc oxidation (MAO) of Mg and its alloys  

Science Journals Connector (OSTI)

Product/metal ratio (PMR...) was introduced as a novel criterion for the evaluation of electrolytes on micro-arc oxidation (MAO) of Mg and its alloys....PBR), focused on the roles of electrolytes for the compactn...

LaiWen Song; YingWei Song; DaYong Shan; GuoYi Zhu…

2011-10-01T23:59:59.000Z

293

Single crystal flow reactor for studying reactivities on metal oxide model catalysts at atmospheric pressure to bridge the pressure gap to the adsorption properties determined under UHV conditions  

Science Journals Connector (OSTI)

A flow reactor for the investigation of heterogeneous catalytic reactions on single crystalline metal oxide model catalysts has been designed. It is located in a high pressure cell attached to an UHV analysis cha...

C. Kuhrs; M. Swoboda; W. Weiss

2001-01-01T23:59:59.000Z

294

High Activity of Ce1-xNixO2-y for H2 Production through Ethanol Steam Reforming: Tuning Catalytic Performance through Metal-Oxide Interactions  

SciTech Connect (OSTI)

The importance of the oxide: Ce{sub 0.8}Ni{sub 0.2}O{sub 2-y} is an excellent catalyst for ethanol steam reforming. Metal-oxide interactions perturb the electronic properties of the small particles of metallic nickel present in the catalyst under the reaction conditions and thus suppress any methanation activity. The nickel embedded in ceria induces the formation of O vacancies, which facilitate cleavage of the OH bonds in ethanol and water.

G Zhou; L Barrio; S Agnoli; S Senanayake; J Evans; A Kubacka; M Estrella; J Hanson; A Martinez-Arias; et al.

2011-12-31T23:59:59.000Z

295

Fabrication of Metal/Oxide Nanostructures by Anodization Processes for Biosensor, Drug Delivery and Supercapacitor Applications  

E-Print Network [OSTI]

applications of micro/nano structures; (2) novel processes to innovate anodic aluminum oxide nanotube template; (3) the supercapacitor applications of anodic titanium oxide. First, the extremely high surface area AAO coated microneedle and microneedle array...

Chen, Po-Chun

2014-01-13T23:59:59.000Z

296

Operation of mixed conducting metal oxide membrane systems under transient conditions  

DOE Patents [OSTI]

Method of operating an oxygen-permeable mixed conducting membrane having an oxidant feed side, an oxidant feed surface, a permeate side, and a permeate surface, which method comprises controlling the differential strain between the permeate surface and the oxidant feed surface at a value below a selected maximum value by varying the oxygen partial pressure on either or both of the oxidant feed side and the permeate side of the membrane.

Carolan, Michael Francis (Allentown, PA)

2008-12-23T23:59:59.000Z

297

Waste minimization in semiconductor processing  

SciTech Connect (OSTI)

The US semiconductor industry uses 5--7 thousand pounds of arsine annually. Fifty to eighty percent of the arsine used becomes a waste product, which requires abatement. Traditional methods of abatement are reviewed with an emphasis on dry chemical scrubbing. A variety of dry chemical scrubbing materials were evaluated for arsine capacity, using activated carbon as the baseline for comparison. Of the available technologies, dry chemical scrubbing is the most effective means of minimizing arsenic containing waste generated from semiconductor effluents. A copper oxide based media has been identified which has high capacity, high efficiency and treats the spectrum of gases used in MOCVD processes. Reclaim and recovery of spent scrubber media has the potential to drastically reduce arsenic waste from semiconductor manufacturing.

Hardwick, S.J.; Mailloux, J.C. [Novapure Corp., Danbury, CT (United States)

1994-12-31T23:59:59.000Z

298

E-Print Network 3.0 - alkali metal oxides Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

, sodium carbide, turpentine, finely divided metals Calcium water, carbon dioxide, carbon tetrachloride... , and chlorinated hydrocarbons Carbon, activated calcium...

299

Low Temperature Deposition of Metal Oxide Thin Films in Supercritical Carbon Dioxide using Metal-organic Precursors  

E-Print Network [OSTI]

and are driven by the energy provided by a heated substrate. Both these vacuum-based techniques require in the precursor adsorption, oxidation and by-product desorption. [5] Use of solvation energy may provide a viable. Pressurized CO2 was delivered using an ISCO 260D syringe pump through a high- pressure manifold. Resistive

Gougousi, Theodosia

300

In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques  

E-Print Network [OSTI]

-type semiconductor metal oxide that has many applications in various fields due to its special optical, electrical capacity anode for next gen- eration lithium ion batteries.3,4 SnO2 can also be used as a catalyst typically around 10-2 cm. The adsorp- tion of O2 from air removes the electron charge carriers from

George, Steven M.

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Hydrolysis of Naptalam and Structurally Related Amides: Inhibition by Dissolved Metal Ions and Metal (Hydr)Oxide Surfaces  

E-Print Network [OSTI]

. INTRODUCTION Several important classes of agrochemicals possess amide and anilide functional groups. Naptalam). Agrochemicals often possess functional groups in the vicinity of amide and anilide linkages; participation and anilide agrochemicals. Granados et al. (1995) reported no significant effects of dissolved divalent metal

Huang, Ching-Hua

302

Consistent LDA' + DMFT approach to the electronic structure of transition metal oxides: Charge transfer insulators and correlated metals  

SciTech Connect (OSTI)

We discuss the recently proposed LDA' + DMFT approach providing a consistent parameter-free treatment of the so-called double counting problem arising within the LDA + DMFT hybrid computational method for realistic strongly correlated materials. In this approach, the local exchange-correlation portion of the electron-electron interaction is excluded from self-consistent LDA calculations for strongly correlated electronic shells, e.g., d-states of transition metal compounds. Then, the corresponding double-counting term in the LDA' + DMFT Hamiltonian is consistently set in the local Hartree (fully localized limit, FLL) form of the Hubbard model interaction term. We present the results of extensive LDA' + DMFT calculations of densities of states, spectral densities, and optical conductivity for most typical representatives of two wide classes of strongly correlated systems in the paramagnetic phase: charge transfer insulators (MnO, CoO, and NiO) and strongly correlated metals (SrVO{sub 3} and Sr{sub 2}RuO{sub 4}). It is shown that for NiO and CoO systems, the LDA' + DMFT approach qualitatively improves the conventional LDA + DMFT results with the FLL type of double counting, where CoO and NiO were obtained to be metals. Our calculations also include transition-metal 4s-states located near the Fermi level, missed in previous LDA + DMFT studies of these monoxides. General agreement with optical and the X-ray experiments is obtained. For strongly correlated metals, the LDA' + DMFT results agree well with the earlier LDA + DMFT calculations and existing experiments. However, in general, LDA' + DMFT results give better quantitative agreement with experimental data for band gap sizes and oxygen-state positions compared to the conventional LDA + DMFT method.

Nekrasov, I. A., E-mail: nekrasov@iep.uran.ru; Pavlov, N. S.; Sadovskii, M. V. [Russian Academy of Sciences, Institute for Electrophysics, Ural Branch (Russian Federation)

2013-04-15T23:59:59.000Z

303

Synthesis of Mixed Metal Oxides for Hydrodeoxygenation of Pyrolysis Oil for Alternative Fuels Sarah McNew, Tiorra Ross and Carsten Sievers  

E-Print Network [OSTI]

· Flash pyrolysis on biomass [1] · Short residence times and flexible feed · Bio-oils produced are close to dissociate hydrogen Goal: synthesize metal free, sulfur free, catalysts for HDO Biomass Pyrolysis OilSynthesis of Mixed Metal Oxides for Hydrodeoxygenation of Pyrolysis Oil for Alternative Fuels Sarah

Das, Suman

304

Cu–Zn–Al mixed metal oxides derived from hydroxycarbonate precursors for H2S removal at low temperature  

Science Journals Connector (OSTI)

One series of Cu–Zn and two series of Cu–Zn–Al hydroxycarbonate precursors with varying metal molar ratios were prepared via co-precipitation or multi-precipitation method, and the mixed metal oxides obtained by calcination of the precursor materials were used as adsorbents for H2S removal in the range of 25–100 °C. The results of H2S adsorption tests showed that these mixed oxides, especially two series of Cu–Zn–Al mixed metal oxides exhibited markedly high breakthrough sulfur capacities (ranging from 4.4 to 25.7 g S/100 g-sorbent with increase of Cu/Zn molar ratio) at 40 °C. Incorporation Cu and/or Al decreased the mean crystalline sizes of ZnO and CuO species in the Cu–Zn and Cu–Zn–Al mixed metal oxide adsorbents by decreasing of mean crystalline sizes of hydroxycarbanate phases mainly including hydrozincite, aurichalcite and malachite, segregation of Al phase, etc. Higher breakthrough sulfur capacity of each adsorbent in two ternary series than that of the corresponding adsorbent in binary series should be ascribed to the enhancement of the dispersion of ZnO and/or CuO species with incorporation of aluminum, thereby increasing the overall rate of reaction between the adsorbent and H2S by reducing the thickness of potential sulfide shell on the outer layer of the oxide crystalline grains and increasing the area of the interface for the exchange of HS?/S2? and O2?. For each series of adsorbents, the breakthrough sulfur capacity increased with the increase of Cu/Zn molar ratio regardless of changes of the dispersion of CuO and/or ZnO. This phenomenon might be mainly attributed to faster rate of the lattice diffusion of HS?, S2? and O2? or exchange of HS?/S2? and O2? during the sulfidation of CuO than that during the sulfidation of ZnO due to less rearrangement of the anion lattice.

Dahao Jiang; Lianghu Su; Lei Ma; Nan Yao; Xiaoliang Xu; Haodong Tang; Xiaonian Li

2010-01-01T23:59:59.000Z

305

Control of differential strain during heating and cooling of mixed conducting metal oxide membranes  

DOE Patents [OSTI]

Method of operating an oxygen-permeable mixed conducting membrane having an oxidant feed side and a permeate side, which method comprises controlling the differential strain between the oxidant feed side and the permeate side by varying either or both of the oxygen partial pressure and the total gas pressure on either or both of the oxidant feed side and the permeate side of the membrane while changing the temperature of the membrane from a first temperature to a second temperature.

Carolan, Michael Francis (Allentown, PA)

2007-12-25T23:59:59.000Z

306

Molten Metal Anodes for Direct Carbon-Solid Oxide Fuel Cells.  

E-Print Network [OSTI]

??The aim of this thesis was to enable the direct utilization of solid carbonaceous fuels like coal and biomass, in solid oxide fuel cells (SOFC).… (more)

Jayakumar, Abhimanyu

2012-01-01T23:59:59.000Z

307

Experimental Study of Electron Transport through Nanometer-Scale Metal-Oxide Junctions  

E-Print Network [OSTI]

-annealing. The resistive bistability effect has been observed for all these materials, with particularly high switching, crested barrier, rapid thermal annealing, endurance, resistive bistability, reproducibility. #12;v List properties of Nb/Al/Nb junctions fabricated using thermal oxidation or rf-plasma oxidation at various

308

Metal-free mild oxidation of 5-hydroxymethylfurfural to 2,5-diformylfuran  

Science Journals Connector (OSTI)

The potential of 4-hydroxy-2,2,6,6-tetramethyl-piperidine-1-oxyl (4-hydroxy-TEMPO radical) as an oxidant with [bis(acetoxy)-iodo]benzene (BAIB) and acetic acid (CH3COOH) as co-oxidants to convert 5-hydroxymethylfurfural

Neha Mittal; Grace M. Nisola; Lenny B. Malihan…

2014-08-01T23:59:59.000Z

309

Life Prediction of Coated and Uncoated Metallic Interconnect for Solid Oxide Fuel Cell Applications  

SciTech Connect (OSTI)

Oxidation reaction of the ferritic stainless interconnects in a typical SOFC working environment is unavoidable and the thickness of the oxide scale will continue to grow with operating time, even with protective coatings. The interfacial strength of the various interfaces for the uncoated and coated ferritic interconnects is crucial to long term performance of SOFCs. In this paper, we employ an integrated experimental/modeling approach to quantify the interfacial strength and to further predict the life of Crofer 22 APU as SOFC interconnect under isothermal cooling condition. The life of Crofer 22 APU was predicted by comparing the predicted interfacial strength, interfacial stresses induced by the cooling process from the operating temperature to room temperature, together with the growth kinetics of oxide scale with and without spinel coating. It was found that the interfacial strength between the oxide scale and Crofer 22 APU substrate decreases with the growth of the oxide scale. The interfacial strength of the oxide scale and spinel coating is much higher than that of the oxide scale and Crofer 22 APU substrate. With the spinel coating, the predicted life of the Crofer 22 APU is significantly longer than that of the uncoated Crofer 22 APU.

Liu, Wenning N.; Sun, Xin; Stephens, Elizabeth V.; Khaleel, Mohammad A.

2009-04-15T23:59:59.000Z

310

(Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon metal and alloys (excluding semiconductor-grade silicon)  

E-Print Network [OSTI]

%; China, 16%; South Africa, 13%; Canada, 12%; and other, 39%. Tariff: Item Number Normal Trade Relations metal: Brazil, 37%; South Africa, 25%; Canada, 14%; Norway, 6%; and other, 18%. Total: Brazil, 20 energy costs. Demand for silicon metal comes primarily from the aluminum and chemical industries

311

Mechanism of oxygen reduction reaction on transition metal oxide catalysts for high temperature fuel cells  

E-Print Network [OSTI]

The solid oxide fuel cell (SOFC) with its high energy conversion efficiency, low emissions, silent operation and its ability to utilize commercial fuels has the potential to create a large impact on the energy landscape. ...

La O', Gerardo Jose Cordova

2008-01-01T23:59:59.000Z

312

Suitability of Metallic Materials for Interconnects in Solid Oxide Fuel Cells  

Science Journals Connector (OSTI)

FeCr model alloys with variation of chromium content, reactive element addition and spinel forming elements were studied in respect to oxidation resistance at 800°C. Additionally, in-situ studies were carried ...

W. J. Quadakkers; J. Piron-Abellan…

2002-01-01T23:59:59.000Z

313

Autothermal oxidative pyrolysis of biomass feedstocks over noble metal catalysts to liquid products.  

E-Print Network [OSTI]

??Two thermal processing technologies have emerged for processing biomass into renewable liquid products: pyrolysis and gasification/Fischer-Tropsch processing. The work presented here will demonstrate oxidative pyrolysis… (more)

Balonek, Christine Marie

2011-01-01T23:59:59.000Z

314

Nonlinear response of the surface electrostatic potential formed at metal oxide/electrolyte interfaces. A Monte Carlo simulation study  

SciTech Connect (OSTI)

An analysis of surface potential nonlinearity at metal oxide/electrolyte interfaces is presented. By using Grand Canonical Monte Carlo simulations of a simple lattice model of an interface, we show a correlation exists between ionic strength as well as surface site densities and the non-Nernstian response of a metal oxide electrode. We propose two approaches to deal with the 0-nonlinearity: one based on perturbative expansion of the Gibbs free energy and another based on assumption of the pH-dependence of surface potential slope. The theoretical anal ysis based on our new potential form gives excellent performance at extreme pH regions, where classical formulae based on the Poisson-Boltzmann equation fail. The new formula is general and independent of any underlying assumptions. For this reason, it can be directly applied to experimental surface potential measurements, including those for individual surfaces of single crystals, as we present for data reported by Kallay and Preocanin [Kallay, Preocanin J. Colloid and Interface20 Sci. 318 (2008) 290].

Zarzycki, Piotr P.; Rosso, Kevin M.

2010-01-01T23:59:59.000Z

315

High-temperature desulfurization of gasifier effluents with rare earth and rare earth/transition metal oxides  

SciTech Connect (OSTI)

We have improved the application of mixed rare-earth oxides (REOs) as hot gas desulfurization adsorbents by impregnating them on stable high surface area supports and by the inclusion of certain transition metal oxides. We report comparative desulfurization experiments at high temperature (900 K) using a synthetic biomass gasifier effluent containing 0.1 vol % H{sub 2}S, along with H{sub 2}, CO{sub 2}, and water. More complex REO sorbents outperform the simpler CeO{sub 2}/La{sub 2}O{sub 3} mixtures, in some cases significantly. Supporting REOs on Al{sub 2}O{sub 3} (?20 wt % REO) or ZrO{sub 2} actually increased the sulfur capacities found after several cycles on a total weight basis. Another major increase in sulfur capacity took place when MnO{sub x} or FeO{sub x} is incorporated. Apparently most of the Mn or Fe is dispersed on or near the surface of the mixed REOs because the capacities with REOs greatly exceeded those of Al{sub 2}O{sub 3}-supported MnO{sub x} or FeO{sub x} alone at these conditions. In contrast, incorporating Cu has little effect on sulfur adsorption capacities. Both the REO and transition metal/REO adsorbents could be regenerated completely using air for at least five repetitive cycles.

Dooley, Kerry M.; Kalakota, Vikram; Adusumilli, Sumana

2011-01-01T23:59:59.000Z

316

Interplay between electronic structure and catalytic activity in transition metal oxide model system  

E-Print Network [OSTI]

The efficiency of many energy storage and conversion technologies, such as hydrogen fuel cells, rechargeable metal-air batteries, and hydrogen production from water splitting, is limited by the slow kinetics of the oxygen ...

Suntivich, Jin

2012-01-01T23:59:59.000Z

317

Biomonitoring on Carcinogenic Metals and Oxidative DNA Damage in a Cross-Sectional Study  

Science Journals Connector (OSTI)

...result of human activities such as mining, smelting, fossil fuel combustion, and industrial application of metals. The highest...production of stainless steel, high-nickel alloys, Ni-Cd batteries, and electronic components. A major fraction of nickel absorbed...

Hiltrud Merzenich; Andrea Hartwig; Wolfgang Ahrens; Detmar Beyersmann; Regina Schlepegrell; Martin Scholze; Jürgen Timm; and Karl-Heinz Jöckel

2001-05-01T23:59:59.000Z

318

Ultrathin aluminum oxide films: Al-sublattice structure and the effect of substrate on ad-metal adhesion  

SciTech Connect (OSTI)

First principles density-functional slab calculations are used to study 5 {angstrom} (two O-layer) Al{sub 2}O{sub 3} films on Ru(0001) and Al(111). Using larger unit cells than in a recent study, it is found that the lowest energy stable film has an even mix of tetrahedral (t) and octahedral (o) site Al ions, and thus most closely resembles the {kappa}-phase of bulk alumina. Here, alternating zig-zag rows of t and o occur within the surface plane, resulting in a greater average lateral separation of the Al-ions than with pure t or o. A second structure with an even mix of t and o has also been found, consisting of alternating stripes. These patterns mix easily, can exist in three equivalent directions on basal substrates, and can also be displaced laterally, suggesting a mechanism for a loss of long-range order in the Al-sublattice. While the latter would cause the film to appear amorphous in diffraction experiments, local coordination and film density are little affected. On a film supported by rigid Ru(0001), overlayers of Cu, Pd, and Pt bind similarly as on bulk truncated {alpha}-Al{sub 2}O{sub 3}(0001). However, when the film is supported by soft Al(111), the adhesion of Cu, Pd, and Pt metal overlayers is significantly increased: Oxide-surface Al atoms rise so only they contact the overlayer, while substrate Al metal atoms migrate into the oxide film. Thus the binding energy of metal overlayers is strongly substrate dependent, and these numbers for the above Pd-overlayer systems bracket a recent experimentally derived value for a film on NiAl(110).

JENNISON,DWIGHT R.; BOGICEVIC,ALEXANDER

2000-03-06T23:59:59.000Z

319

INVESTIGATION OF MIXED METAL SORBENT/CATALYSTS FOR THE SIMULTANEOUS REMOVAL OF SULFUR AND NITROGEN OXIDES  

SciTech Connect (OSTI)

Simultaneous removal of SO{sub 2} and NO{sub x} using a regenerable solid sorbent will constitute an important improvement over the use of separate processes for the removal of these two pollutants from stack gases and possibly eliminate several shortcomings of the individual SO{sub 2} and NO{sub x} removal operations. The work done at PETC and the DOE-funded investigation of the investigators on the sulfation and regeneration of alumina-supported cerium oxide sorbents have shown that they can perform well at relatively high temperatures (823-900 K) as regenerable desulfurization sorbents. Survey of the recent literature shows that addition of copper oxide to ceria lowers the sulfation temperature of ceria down to 773 K, sulfated ceria-based sorbents can function as selective SCR catalysts even at elevated temperatures, SO{sub 2} can be directly reduced to sulfur by CO on CuO-ceria catalysts, and ceria-based catalysts may have a potential for selective catalytic reduction of NO{sub x} by methane. These observations indicate a possibility of developing a ceria-based sorbent/catalyst which can remove both SO{sub 2} and NO{sub x} from flue gases within a relatively wide temperature window, produce significant amounts of elemental sulfur during regeneration, and use methane for the selective catalytic reduction of NO{sub x}. The objective of this research is to conduct kinetic and parametric studies of the selective catalytic reduction of NO{sub x} with NH{sub 3} and CH{sub 4} over alumina-supported cerium oxide and copper oxide-cerium oxide sorbent/catalysts; investigate SO{sub 2} removal at lower temperatures by supported copper oxide-cerium oxide sorbents; and investigate the possibility of elemental sulfur production during regeneration with CO or with CH{sub 4}-air mixtures.

Ates Akyurtlu; Jale F. Akyurtlu

2000-04-10T23:59:59.000Z

320

INVESTIGATION OF MIXED METAL SORBENT/CATALYSTS FOR THE SIMULTANEOUS REMOVAL OF SULFUR AND NITROGEN OXIDES  

SciTech Connect (OSTI)

Simultaneous removal of SO{sub 2} and NO{sub x} using a regenerable solid sorbent will constitute an important improvement over the use of separate processes for the removal of these two pollutants from stack gases and possibly eliminate several shortcomings of the individual SO{sub 2} and NO{sub x} removal operations. The work done at PETC and the DOE-funded research of the investigators on the sulfation and regeneration of alumina-supported cerium oxide sorbents have shown that they can perform well at relatively high temperatures (823-900 K) as regenerable desulfurization sorbents. Survey of the recent literature shows that addition of copper oxide to ceria lowers the sulfation temperature of ceria down to 773 K, sulfated ceria-based sorbents can function as selective SCR catalysts even at elevated temperatures, SO{sub 2} can be directly reduced to sulfur by CO on CuO-ceria catalysts, and ceria-based catalysts may have a potential for selective catalytic reduction of NO{sub x} by methane. These observations indicate a possibility of developing a ceria-based sorbent/catalyst which can remove both SO{sub 2} and NO{sub x} from flue gases within a relatively wide temperature window, produce significant amounts of elemental sulfur during regeneration, and use methane for the selective catalytic reduction of NO{sub x}. The objective of this research is to conduct kinetic and parametric studies of the selective catalytic reduction of NO{sub x} with NH{sub 3} and CH{sub 4} over alumina-supported cerium oxide and copper oxide-cerium oxide sorbent/catalysts; investigate SO{sub 2} removal at lower temperatures by supported copper oxide-cerium oxide sorbents; and investigate the possibility of elemental sulfur production during regeneration with CO or with CH{sub 4} air mixtures.

Ates Akyurtlu; Jale F. Akyurtlu

1999-11-30T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
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321

Investigation of mixed metal sorbent/catalysts for the simultaneous removal of sulfur and nitrogen oxides  

SciTech Connect (OSTI)

Simultaneous removal of SO{sub 2} and NO{sub x} using a regenerable solid sorbent will constitute an important improvement over the use of separate processes for the removal of these two pollutants from stack gases and possibly eliminate several shortcomings of the individual SO{sub 2} and NO{sub x} removal operations. The work done at PETC and the DOE-funded investigation of the investigators on the sulfation and regeneration of alumina-supported cerium oxide sorbents have shown that they can perform well at relatively high temperatures (823-900 K) as regenerable desulfurization sorbents. Survey of the recent literature shows that addition of copper oxide to ceria lowers the sulfation temperature of ceria down to 773 K, sulfated ceria-based sorbents can function as selective SCR catalysts even at elevated temperatures, SO{sub 2} can be directly reduced to sulfur by CO on CuO-ceria catalysts, and ceria-based catalysts may have a potential for selective catalytic reduction of NO{sub x} by methane. These observations indicate a possibility of developing a ceria-based sorbent/catalyst which can remove both SO{sub 2} and NO{sub x} from flue gases within a relatively wide temperature window, produce significant amounts of elemental sulfur during regeneration, and use methane for the selective catalytic reduction of NO{sub x}. The objective of this research is to conduct kinetic and parametric studies of the selective catalytic reduction of NO{sub x} with NH{sub 3} and CH{sub 4} over alumina-supported cerium oxide and copper oxide-cerium oxide sorbent/catalysts; investigate SO{sub 2} removal at lower temperatures by supported copper oxide-cerium oxide sorbents; and investigate the possibility of elemental sulfur production during regeneration with CO or with CH{sub 4}-air mixtures.

Akyurtlu, A.; Akyurtlu, J.F.

1999-03-31T23:59:59.000Z

322

Laser Desorption/Ionization of Transition Metal Atoms and Oxides from Solid Argon Lester Andrews,*, Andreas Rohrbacher, Christopher M. Laperle, and Robert E. Continetti  

E-Print Network [OSTI]

, approximately 10% of the gas sample condensed on the 10K copper plate. For ablation a focused (10 cm f of the laser-ablated metal atoms and O2 in excess argon during condensation at 10 K, have been laser desorbed spectrometry. Adding the C6H5Br chromophore to the Ar/O2 gas mixture also enhanced the metal and oxide ion

Continetti, Robert E.

323

Electrostatic screening by semiconductors  

E-Print Network [OSTI]

Electrostatic screening by semiconductors is studied, hics. applying the Thomas-Fermi theory. The semiconductor is treated as a medium with dielectric constant e due to vocalizable atoms, with force charge due to electrons. Two models...

Krcmar, Maja

2012-06-07T23:59:59.000Z

324

Investigation of zinc oxide doped with metal impurities for use as thin film conductive phosphors  

E-Print Network [OSTI]

of a viable flat panel display, low voltage, conductive phosphors which emit blue, red, and green light will be required for the field emission technology. This thesis examines zinc oxide (ZnO) based thin ( ) phosphors for such an application. ZnO is a...

Evatt, Steven R.

1994-01-01T23:59:59.000Z

325

Method of producing highly oxidized superconductors containing barium, copper, and a third metal  

DOE Patents [OSTI]

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known syntheses in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed. 16 figs.

Morris, D.E.

1996-02-20T23:59:59.000Z

326

Decoupled catalytic hydrogen evolution from a molecular metal oxide redox mediator in water splitting  

Science Journals Connector (OSTI)

...system that uses a carbon cathode to reduce protons and a...SiW 12 O 40 ] at a carbon cathode. Alternatively, starting from the fully oxidized...Nanostructured nickel phosphide as an electrocatalyst for the hydrogen evolution reaction . J...electrocatalysis to stack development . Int. J. Hydrogen Energy...

Benjamin Rausch; Mark D. Symes; Greig Chisholm; Leroy Cronin

2014-09-12T23:59:59.000Z

327

Giant and switchable surface activity of liquid metal via surface oxidation  

Science Journals Connector (OSTI)

...recent developments . Adv Colloid Interface Sci 159 ( 2 ): 198 – 212 . 27 Ladd C So J-H Muth J Dickey MD ( 2013 ) 3D printing of free standing liquid metal microstructures . Adv Mater 25 ( 36 ): 5081 – 5085 . 28 Regan MJ ( 1997 ) X-ray reflectivity...

Mohammad Rashed Khan; Collin B. Eaker; Edmond F. Bowden; Michael D. Dickey

2014-01-01T23:59:59.000Z

328

Selective Separation of Thiols from a Model Fuel by Metal Oxides  

Science Journals Connector (OSTI)

These fossil fuels typically contain sulfur compounds on the order of a few percent. ... The authors have found that sulfur-loaded coals adsorb heavy metals in aqueous solutions. ... methods for fuel oils in relation to demand of low-sulfur fuel oils for air pollution control. ...

Yuuki Mochizuki; Katsuyasu Sugawara

2008-10-14T23:59:59.000Z

329

Functionalized Graphene Sheets as Molecular Templates for Controlled Nucleation and Self-Assembly of Metal Oxide-Graphene Nanocomposites  

SciTech Connect (OSTI)

Graphene sheets have been extensively studied as a key functional component of graphene-based nanocomposites for electronics, energy, catalysis,and sensing applications. However, fundamental understanding of the interfacial binding and nucleation processes at graphene surfaces remains lacking, and the range of controlled structures that can be produced are limited. Here, by using a combination of theoretical and experimental approaches, we demonstrate that functionalized graphene sheets (FGS) can function as a new class of molecular templates to direct nucleation and self-assembly and produce novel, three-dimensional nanocomposite materials. Two key aspects are demonstrated: First, the functional groups on FGS surface determine the nucleation energy, and thus control the nucleation sites and nucleation density, as well as the preferred crystalline phases. Second, FGS can function as a template to direct the self-assembly of surfactant micelles and produce ordered, mesoporous arrays of crystalline metal oxides and composites.

Li, Xiaolin; Qi, Wen N.; Mei, Donghai; Sushko, Maria L.; Aksay, Ilhan A.; Liu, Jun

2012-09-25T23:59:59.000Z

330

Use of impure inert gases in the controlled heating and cooling of mixed conducting metal oxide materials  

DOE Patents [OSTI]

Method for processing an article comprising mixed conducting metal oxide material. The method comprises contacting the article with an oxygen-containing gas and either reducing the temperature of the oxygen-containing gas during a cooling period or increasing the temperature of the oxygen-containing gas during a heating period; during the cooling period, reducing the oxygen activity in the oxygen-containing gas during at least a portion of the cooling period and increasing the rate at which the temperature of the oxygen-containing gas is reduced during at least a portion of the cooling period; and during the heating period, increasing the oxygen activity in the oxygen-containing gas during at least a portion of the heating period and decreasing the rate at which the temperature of the oxygen-containing gas is increased during at least a portion of the heating period.

Carolan, Michael Francis (Allentown, PA); Bernhart, John Charles (Fleetwood, PA)

2012-08-21T23:59:59.000Z

331

Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open Energy  

Open Energy Info (EERE)

Semiconductor formerly Bandwidth Semiconductor LLC Semiconductor formerly Bandwidth Semiconductor LLC Jump to: navigation, search Name Spire Semiconductor (formerly Bandwidth Semiconductor LLC) Place Hudson, New Hampshire Zip 3051 Product Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References Spire Semiconductor (formerly Bandwidth Semiconductor LLC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Spire Semiconductor (formerly Bandwidth Semiconductor LLC) is a company located in Hudson, New Hampshire . References ↑ "Spire Semiconductor (formerly Bandwidth Semiconductor LLC)" Retrieved from "http://en.openei.org/w/index.php?title=Spire_Semiconductor_formerly_Bandwidth_Semiconductor_LLC&oldid=351621"

332

Au/MxOy/TiO2 catalysts for CO oxidation: promotional effect of main-group, transition, and rare-earth metal oxide additives.  

SciTech Connect (OSTI)

Au/TiO2 catalysts are active for CO oxidation, but they suffer from high-temperature sintering of the gold particles, and few attempts have been made to promote or stabilize Au/TiO2. Our recent communication addressed these issues by loading gold onto Al2O3/TiO2 prepared via surface-sol-gel processing of Al(sec-OC4H9)3 on TiO2. In our current full paper, Au/Al2O3/TiO2 catalysts were prepared alternatively by thermal decomposition of Al(NO3)3 on TiO2 followed by loading gold, and the influences of the decomposition temperature and Al2O3 content were systematically surveyed. This facile method was subsequently extended to the preparation of a battery of metal oxide-modified Au/TiO2 catalysts virtually not reported. It was found that Au/TiO2 modified by CaO, NiO, ZnO, Ga2O3, Y2O3, ZrO2, La2O3, Pr2O3, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Dy2O3, Ho2O3, Er2O3, or Yb2O3 could retain significant activity at ambient temperature even after aging in O2-He at 500 C, whereas unmodified Au/TiO2 lost its activity. Moreover, some 200 C-calcined promoted catalysts showed high activity even at about -100 C. The deactivation and regeneration of some of these new catalysts were studied. This work furnished novel catalysts for further fundamental and applied research.

Ma, Zhen [ORNL; Overbury, Steven {Steve} H [ORNL; Dai, Sheng [ORNL

2007-01-01T23:59:59.000Z

333

Design and construction of a radiation resistant quadrupole using metal oxide insulated CICC  

SciTech Connect (OSTI)

The construction of a engineering test model of a radiation resistant quadrupole is described. The cold-iron quadrupole uses coils fabricated from metal-oixide (synthetic spinel) insulated Cable-In-Conduit-Conductor (CICC). The superconductor is NbTi in a copper matrix. The quadrupole is designed to produce a pole-tip field of 2 T with an operating current of 7,000 A.

Albert F. Zeller

2012-12-28T23:59:59.000Z

334

Method for improving the oxidation-resistance of metal substrates coated with thermal barrier coatings  

DOE Patents [OSTI]

A method for providing a protective coating on a metal-based substrate is disclosed. The method involves the application of an aluminum-rich mixture to the substrate to form a discontinuous layer of aluminum-rich particles, followed by the application of a second coating over the discontinuous layer of aluminum-rich particles. Aluminum diffuses from the aluminum-rich layer into the substrate, and into any bond coat layer which is subsequently applied. Related articles are also described.

Thompson, Anthony Mark (Niskayuna, NY); Gray, Dennis Michael (Delanson, NY); Jackson, Melvin Robert (Niskayuna, NY)

2002-01-01T23:59:59.000Z

335

Sorption Capacity of Mesoporous Metal Oxides for the Removal of MCPA from Polluted Waters  

Science Journals Connector (OSTI)

where qe and q are the amount of herbicide sorbed (?mol kg?1) at equilibrium and at time t, respectively, Ka is the rate constant of sorption (min?1) and t is the time (min). ... The sorbing capacity for Zn and Cu was strongly influenced by Cr(III), whereas the sorbing capacity of for(III) was not affected by the presence of the other two metals. ...

Veria Addorisio; Serena Esposito; Filomena Sannino

2010-03-24T23:59:59.000Z

336

Molybdenum-based additives to mixed-metal oxides for use in hot gas cleanup sorbents for the catalytic decomposition of ammonia in coal gases  

DOE Patents [OSTI]

This invention relates to additives to mixed-metal oxides that act simultaneously as sorbents and catalysts in cleanup systems for hot coal gases. Such additives of this type, generally, act as a sorbent to remove sulfur from the coal gases while substantially simultaneously, catalytically decomposing appreciable amounts of ammonia from the coal gases.

Ayala, Raul E. (Clifton Park, NY)

1993-01-01T23:59:59.000Z

337

PVP-functionalized nanometre scale metal oxide coatings for cathode materials: successful application to LiMn2O4 spinel nanoparticlesw  

E-Print Network [OSTI]

PVP-functionalized nanometre scale metal oxide coatings for cathode materials: successful-MnO2, may react with the electrolyte, leading to passivating structural changes of the active material retention compared to the bare counterpart. Spinel LiMn2O4 cathodes have been studied for possible use in Li

Cho, Jaephil

338

Noble Metal-Free Reduced Graphene Oxide-ZnxCd1-xS Nanocomposite with Enhanced Solar Photocatalytic H2Production  

E-Print Network [OSTI]

solar energy by production of hydrogen from water splitting is of great importance from both theoretical strategy for solving simultaneously the incoming energy and environmental problems.2 So far, numerousNoble Metal-Free Reduced Graphene Oxide-ZnxCd1-xS Nanocomposite with Enhanced Solar Photocatalytic

Gong, Jian Ru

339

Preparation of iron oxide thin film by metal organic deposition from Fe(III)-acetylacetonate: a study of photocatalytic properties  

Science Journals Connector (OSTI)

Iron oxide thin films have been deposited over fused quartz substrate by simple metal organic deposition from Fe-(III) acetylacetonate as the organic precursor. The decomposition of Fe-acetylacetonate is characterised by its distinct transition temperatures and thermogravimetric loss rates, which have been measured by thermal gravimetric analysis. As-deposited films were sintered in the temperature range 365–800°C and the structural changes of the iron oxide thin films as they transform into different crystalline phases have been studied by X-ray diffraction, Fourier transform infrared spectroscopy, ultraviolet-visible absorption spectroscopy and scanning electron microscopy techniques. Mainly amorphous ?-Fe2O3 is formed at an annealing temperature of approximately 365–400°C, which transforms to ?-Fe2O3 phase with a further increase (600–800°C) in sintering temperature. The film sintered at 800°C consists of mainly crystalline ?-Fe2O3 phase, which shows photocatalytic degradation of an oxygenated aqueous solution of phenol upon visible light illumination.

Bonamali Pal; Maheshwar Sharon

2000-01-01T23:59:59.000Z

340

Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere  

SciTech Connect (OSTI)

Nanostrucured europium oxide and hydroxide films were obtained by pulsed Nd:YAG (532 nm) laser ablation of a europium metallic target, in the presence of a 1 mbar helium buffer atmosphere. Both the produced film and the ambient plasma were characterized. The plasma was monitored by an electrostatic probe, for plume expansion in vacuum or in the presence of the buffer atmosphere. The time evolution of the ion saturation current was obtained for several probe to substrate distances. The results show the splitting of the plume into two velocity groups, being the lower velocity profile associated with metal cluster formation within the plume. The films were obtained in the presence of helium atmosphere, for several target-to-substrate distances. They were analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and atomic force microscopy, for as-deposited and 600 deg. C treated-in-air samples. The results show that the as-deposited samples are amorphous and have chemical composition compatible with europium hydroxide. The thermally treated samples show x-ray diffraction peaks of Eu{sub 2}O{sub 3}, with chemical composition showing excess oxygen. Film nanostructuring was shown to be strongly correlated with cluster formation, as shown by velocity splitting in probe current versus time plots.

Luna, H.; Franceschini, D. F.; Prioli, R.; Guimaraes, R. B.; Sanchez, C. M.; Canal, G. P.; Barbosa, M. D. L.; Galvao, R. M. O. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Cx. Postal 68528, Rio de Janeiro, RJ 21941-972 (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Rua Marques de Sao Vicente 225, 22453-970, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Departamento de Fisica Nuclear, Universidade de Sao Paulo, Caixa Postal 66328, 05315-970, Sao Paulo, SP (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil)

2010-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "metal oxide semiconductor" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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341

Life-cycle Assessment of Semiconductors  

E-Print Network [OSTI]

The international technology roadmap for semiconductors,The international technology roadmap for semiconductors:The international technology roadmap for semiconductors,

Boyd, Sarah B.

2009-01-01T23:59:59.000Z

342

Helicon wave excitation to produce energetic electrons for manufacturing semiconductors  

DOE Patents [OSTI]

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18-0.35 mm or less.

Molvik, Arthur W. (Livermore, CA); Ellingboe, Albert R. (Fremont, CA)

1998-01-01T23:59:59.000Z

343

Helicon wave excitation to produce energetic electrons for manufacturing semiconductors  

DOE Patents [OSTI]

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18--0.35 mm or less. 16 figs.

Molvik, A.W.; Ellingboe, A.R.

1998-10-20T23:59:59.000Z

344

Understanding Atom Probe Tomography of Oxide-Supported Metal Nanoparticles by Correlation with Atomic Resolution Electron Microscopy and Field Evaporation Simulation  

SciTech Connect (OSTI)

Metal-dielectric composite materials, specifically metal nanoparticles supported on or embedded in metal oxides, are widely used in catalysis. The accurate optimization of such nanostructures warrants the need for detailed three-dimensional characterization. Atom probe tomography is uniquely capable of generating sub-nanometer structural and compositional data with part-per-million mass sensitivity, but there are reconstruction artifacts for composites containing materials with strongly differing fields of evaporation, as for oxide-supported metal nanoparticles. By correlating atom probe tomography with scanning transmission electron microscopy for Au nanoparticles embedded in an MgO support, deviations from an ideal topography during evaporation are demonstrated directly, and correlated with compositional errors in the reconstructed data. Finite element simulations of the field evaporation process confirm that protruding Au nanoparticles will evolve on the tip surface, and that evaporation field variations lead to an inaccurate assessment of the local composition, effectively lowering the spatial resolution of the final reconstructed dataset. Cross-correlating the experimental data with simulations results in a more detailed understanding of local evaporation aberrations during APT analysis of metal-oxide composites, paving the way towards a more accurate three-dimensional characterization of this technologically important class of materials.

Devaraj, Arun; Colby, Robert J.; Vurpillot, F.; Thevuthasan, Suntharampillai

2014-03-26T23:59:59.000Z

345

Determining the Behavior of RuO(x) Nanoparticles in Mixed-Metal Oxides:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mechanism of Ethanol Synthesis from Syngas on Rh(111) Understanding of Mechanism of Ethanol Synthesis from Syngas on Rh(111) Understanding of ethanol decomposition on Rh(1 1 1) from density functional theory and kinetic Monte Carlo simulations Theoretical perspective of alcohol decomposition and synthesis from CO2 hydrogenation