National Library of Energy BETA

Sample records for membership corporation ga

  1. Central Electric Membership Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR Jump to:RAPIDCavallo EnergyOhio: Energy ResourcesMembership

  2. Hypertrapezoidal fuzzy membership functions 

    E-Print Network [OSTI]

    Painter, John H.; Kelly, W. E. III

    1996-09-08

    The authors present a method for representing N-dimensional fuzzy membership functions. The proposed method is a generalization of the one-dimensional trapezoidal membership function commonly used in fuzzy systems. The issue of correlation between...

  3. Electricity Advisory Committee: 2008 Membership Roster | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electricity Advisory Committee: 2008 Membership Roster Electricity Advisory Committee: 2008 Membership Roster Membership Roster of the 2008 Electricity Advisory Committee....

  4. Sawnee Electric Membership Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/ColoradoRemsenburg-Speonk,Sage ResourcesFlorida:Satcon JumpSawmill, Arizona: EnergySawnee

  5. Sawnee Electric Membership Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS Report UrlNM-bRenewableSMUD WindISave Energy at Home Tool Jump

  6. Electricity Advisory Committee (EAC) 2014 Membership Roster:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electricity Advisory Committee (EAC) 2014 Membership Roster: December 4, 2014 Electricity Advisory Committee (EAC) 2014 Membership Roster: December 4, 2014 2014 Membership roster...

  7. Electricity Advisory Committee (EAC) 2012 Membership Roster ...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electricity Advisory Committee (EAC) 2012 Membership Roster Electricity Advisory Committee (EAC) 2012 Membership Roster 2012 Membership roster for the Electricity Advisory...

  8. Electricity Advisory Committee (EAC) 2014 Membership Roster:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electricity Advisory Committee (EAC) 2014 Membership Roster: June 10, 2014 Electricity Advisory Committee (EAC) 2014 Membership Roster: June 10, 2014 2014 Membership roster for the...

  9. Electricity Advisory Committee (EAC) 2013 Membership Roster:...

    Office of Environmental Management (EM)

    3 Membership Roster: December 15, 2013 Electricity Advisory Committee (EAC) 2013 Membership Roster: December 15, 2013 2013 Membership roster for the Electricity Advisory Committee...

  10. Electricity Advisory Committee (EAC) 2014 Membership Roster:...

    Energy Savers [EERE]

    December 4, 2014 Electricity Advisory Committee (EAC) 2014 Membership Roster: December 4, 2014 2014 Membership roster for the Electricity Advisory Committee as of December 4,...

  11. Electricity Advisory Committee (EAC) 2014 Membership Roster:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    June 10, 2014 Electricity Advisory Committee (EAC) 2014 Membership Roster: June 10, 2014 2014 Membership roster for the Electricity Advisory Committee as of June 10, 2014. 2014...

  12. Electricity Advisory Committee (EAC) 2012-2013 Membership Roster...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Committee (EAC) 2012-2013 Membership Roster: December 20, 2012 Electricity Advisory Committee (EAC) 2012-2013 Membership Roster: December 20, 2012 2012-2013 Membership roster for...

  13. Electricity Advisory Committee (EAC) 2014-2015 Membership Roster...

    Energy Savers [EERE]

    4-2015 Membership Roster: September 9, 2014 Electricity Advisory Committee (EAC) 2014-2015 Membership Roster: September 9, 2014 2014-2015 Membership roster for the Electricity...

  14. Distributed Systems Group Membership and View

    E-Print Network [OSTI]

    Guerraoui, Rachid

    Synchrony (vs). Uses: GroupMembership (gmp). TerminatingReliableBroadcast(trb). BestEffortBroadcast(beb). #12

  15. Privacy Impact Assessment Development and Membership Information

    E-Print Network [OSTI]

    Mathis, Wayne N.

    1 Privacy Impact Assessment Development and Membership Information I. System Identification 1. IT System Name: Development and Membership Information System (DMIS) 2. Mission Sponsor: Virginia Clark and membership. II. Privacy Assessment 1. What information is being (or will be) collected. The Development

  16. Tri State Electric Membership Corporation Smart Grid Project | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (Utility Company) Jump to: navigation,Power Systems Inc Jump

  17. Cobb Electric Membership Corporation Smart Grid Project | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company) JumpIowa: Energy ResourcesCreek,Coastal ZoneInformation

  18. Blue Ridge Mountain Electric Membership Corporation - Energy Efficiency

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l De pEnergy Industrial LocalApril 15,

  19. DTC DATA MINING CONSORTIUM MEMBERSHIP BENEFITS

    E-Print Network [OSTI]

    Minnesota, University of

    DTC DATA MINING CONSORTIUM MEMBERSHIP BENEFITS I Collaboration with leading companies I Creation Analysis Optimization Scalable Database Mining Auto-Mining Agents CUTTING-EDGE CAPABILITIES

  20. Electricity Advisory Committee (EAC) 2014-2015 Membership Roster...

    Office of Environmental Management (EM)

    Electricity Advisory Committee (EAC) 2014-2015 Membership Roster: September 9, 2014 Electricity Advisory Committee (EAC) 2014-2015 Membership Roster: September 9, 2014 2014-2015...

  1. Electricity Advisory Committee (EAC) 2012-2013 Membership Roster...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electricity Advisory Committee (EAC) 2012-2013 Membership Roster: August 3, 2012 Electricity Advisory Committee (EAC) 2012-2013 Membership Roster: August 3, 2012 2012-2013...

  2. DOE Announces Membership of New Electricity Advisory Committee...

    Energy Savers [EERE]

    DOE Announces Membership of New Electricity Advisory Committee, April 17, 2008 DOE Announces Membership of New Electricity Advisory Committee, April 17, 2008 DOE Press Release...

  3. MEMBERSHIPS WITH A TAX FREE MEAL PLAN

    E-Print Network [OSTI]

    Boonstra, Rudy

    MEAL PLAN MEMBERSHIPS WITH A TAX FREE MEAL PLAN MEAL PLAN BENEFITS... WHERE MEAL PLANS ARE ACCEPTED. . . ELLESMERE ROAD ELLESMERE ROAD M ILITARY TRAIL N NR NR NR NR CC SL AA SW SY HW BV AC SRC JF SR SR SR SR SR SR, all Meal Plan Memberships are refundable but are subject to taxes (if applicable) and administration

  4. Membership

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELINGMeetings HighAdvisory2015

  5. Current Committee Membership Radiation Protection, Committee on

    E-Print Network [OSTI]

    Polz, Martin

    Current Committee Membership Radiation Protection, Committee on The Committee on Radiation Protection is responsible for the establishment and continuing review of an adequate radiation protection's compliance with radiation protection regulations promulgated by state, federal, and local agencies

  6. AOML Employee Memberships in Science Organizations

    E-Print Network [OSTI]

    American Society of Agronomy Xiaolan Huang, Member Crop Science Society of America Xiaolan HuangAOML Employee Memberships in Science Organizations Cooperative Institute for Climate and Ocean) Mark Powell, Fellow Cooperative Institute of Marine and Atmospheric Science Silvia Garzoli

  7. HARVARD FILM ARCHIVE MEMBERSHIP FORM Individual/Dual Membership $55/$100

    E-Print Network [OSTI]

    Schrag, Daniel

    HARVARD FILM ARCHIVE MEMBERSHIP FORM Individual/Dual Membership $55/$100 Members receive $6 Members receive an individual admission pass for an entire year, a free one-year subscription to Film subscription to Film Comment magazine, subscription to the program calendar, and reserved tickets for special

  8. Electricity Advisory Committee (EAC) 2012-2013 Membership Roster...

    Broader source: Energy.gov (indexed) [DOE]

    2012-2013 Membership roster for the Electricity Advisory Committee as of August 3, 2012. This is superceded by the December 20, 2012 version. 2012-2013 EAC Membership Roster as of...

  9. Electricity Advisory Committee (EAC) 2012-2013 Membership Roster...

    Broader source: Energy.gov (indexed) [DOE]

    2012-2013 Membership roster for the Electricity Advisory Committee as of December 20, 2012. 2012-2013 EAC Membership Roster as of December 20, 2012 More Documents & Publications...

  10. Choosing Membership Functions of Linguistic Terms

    E-Print Network [OSTI]

    Garibaldi, Jon

    such as aircraft flight control, robot control, car speed control, power systems, nuclear reactor control, fuzzy based on what might loosely be called `fuzzy control principles'. The paper highlights a number of membership functions that de- velopers of fuzzy systems outside the paradigm of fuzzy control may consider

  11. Biomedical Sciences Graduate Program Faculty Membership Application

    E-Print Network [OSTI]

    Gleeson, Joseph G.

    Rev 9/14 Biomedical Sciences Graduate Program Faculty Membership Application The mission of the Biomedical Sciences Graduate Program (http://biomedsci.ucsd.edu) at UCSD is to provide outstanding graduate training competitive with the best graduate programs in biomedical sciences worldwide. The program consists

  12. Union Electric Membership Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (Utility Company) JumpGTZ Climate OrientedUnion Electric Membership Corp

  13. Membership Information | National Nuclear Security Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELINGMeetings HighAdvisory2015Membership

  14. Oklahoma 4-H Alumni Association Membership Form Name Maiden Name

    E-Print Network [OSTI]

    Balasundaram, Balabhaskar "Baski"

    Oklahoma 4-H Alumni Association Membership Form Name Maiden Name Home County County Residing Awards/Trips Your membership in the Oklahoma 4-H Alumni Association is an investment in the future of Oklahoma 4-H. Half of your dues will be invested in maintaining the 4-H Alumni Association and the 4-H

  15. Inversion of wurtzite GaN(0001) by exposure to V. Ramachandran and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    in the growth rate of GaN on different crystallographic planes [8], pointing to a surfactant effect of Mg on Ga in these films and the carrier concentration was therefore very low [1,2]; dopant activa- tion can be achieved of Mg at GaN growth temperatures is an issue and dopant in- corporation may be rather inefficient [5

  16. Corporate sustainability assessment methodology

    E-Print Network [OSTI]

    Pinchuk, Natallia

    2011-01-01

    Sustainability is a vague concept specifically in the context of a corporate world. There are numerous definitions for corporate sustainability and just as many ways of evaluating it. This work attempts to define, structure ...

  17. Essays on corporate bonds

    E-Print Network [OSTI]

    Bao, Jack (Jack C.)

    2009-01-01

    This thesis consists of three empirical essays on corporate bonds, examining the role of both credit risk and liquidity. In the first chapter, I test the ability of structural models of default to price corporate bonds in ...

  18. Indianapolis Public Transportation Corporation

    SciTech Connect (OSTI)

    Not Available

    2004-12-01

    Fact sheet describes the National Renewable Energy Laboratory's evaluation of Indianapolis Public Transportation Corporation's (IndyGo's) hybrid electric buses.

  19. CORPORATIONS APAC Tennessee Incorporated

    E-Print Network [OSTI]

    Dasgupta, Dipankar

    Business Resources Breast Cancer Eradication Initiative Incorporated Brother International Corporation Resources Incorporated ETI Corporation Corporate and Foundation Giving The University of Memphis is grateful Family of Companies KPMG Peat Marwick LLP Knox Music Incorporated Frank Ricks/Looney Ricks Kiss Lane

  20. INDUSTRY LIAISON PROGRAM MEMBERSHIP AGREEMENT This MEMBERSHIP AGREEMENT (hereinafter the "Agreement") with the Center for Advanced

    E-Print Network [OSTI]

    Gilchrist, James F.

    approaches and results, ongoing CAMN research, and future research plans. 2) Access to contacts the "Effective Date"), is by and between ___________________________________________ [COMPANY NAME], a _________________________________________________[indicate state of formation and company structure (corporation/ limited liability company/ partnership

  1. Data Mining Group VNG Corporation

    E-Print Network [OSTI]

    Shahabi, Cyrus

    Data Mining Group VNG Corporation Data Mining Group_VNG Corporation 1 #12;Data Mining Group_VNG Corporation 2 1 ·Introduction 2 ·Edge Rank 3 ·Parameter Estimate 4 ·Conclusion #12;Data Mining Group_VNG Corporation 3 #12;Data Mining Group_VNG Corporation 4 #12; User's self activity Update status Write blogs

  2. Corporate Headquarters 317 Route 104

    E-Print Network [OSTI]

    Firestone, Jeremy

    Sustainable Energy Developments, Inc. is a New York Corporation Founded April 2002 Visualization Phone: (978) 422 7744 Sustainable Energy Developments, Inc. is a New York Corporation Founded Energy Developments, Inc. is a New York Corporation Founded April 2002

  3. Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

    SciTech Connect (OSTI)

    ERTEN ESER

    2012-01-22

    The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

  4. Risk Management Steering Committee Membership 2014/15

    E-Print Network [OSTI]

    Victoria, University of

    Risk Management Steering Committee Membership 2014/15 NAME TITLE / DEPARTMENT Gayle Gorrill (Chair, Facilities Management Kane Kilbey Associate Vice-President, Human Resources and EOC Coordinator Kristi Emergency Planner Andrew Coward Assistant Treasurer Ben McAllister Risk and Insurance Analyst Adrian Round

  5. I/UCRC Industrial Membership Agreement Small Business

    E-Print Network [OSTI]

    Kavi, Krishna

    1 I/UCRC Industrial Membership Agreement Small Business Industry/University Cooperative Research to as "ACADEMIC MEMBERS") in a cooperative effort to support an Industry/University Cooperative Research Center will be supported jointly by industrial firms, federal laboratories, the National Science Foundation (NSF

  6. Design Advisory Board (2012-13 Charge/Membership)

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    Design Advisory Board (2012-13 Charge/Membership) The Design Advisory Board has responsibility for assisting the campus in the achievement of planning coherence and high design standards for the campus as a whole--building siting, building arrangement, building design, landscape (both natural and modified

  7. The Friends of Aberdeen University Library Membership Application

    E-Print Network [OSTI]

    Neri, Peter

    Road, Aberdeen, AB24 3AA I wish to be enrolled as a member of the Friends of Aberdeen University Road, Aberdeen, AB24 3AA #12;The Friends of Aberdeen University Library Membership Application Gift Aid an amount of income tax and/or capital gains tax at least equal to the tax that the Charity reclaims on your

  8. Center for Fuel Cells I/UCRC Membership Agreement

    E-Print Network [OSTI]

    Almor, Amit

    Center for Fuel Cells I/UCRC Membership Agreement This agreement is made this _____ day of Proton Exchange Membrane Fuel Cells (PEMFCs) by performing research in (1) fuel cell design; (2) fuel for hydrogen production and the fuel cell electrodes; and (5) motor design and power conditioning

  9. Campus Planning Committee 2014-2015 Position Name Membership Terms

    E-Print Network [OSTI]

    Victoria, University of

    Campus Planning Committee 2014-2015 Position Name Membership Terms Vice President Finance Planning Katy Mateer Ex Officio, term n/a Dean (nominated by Dean's Council) Thomas Tiedje, Dean ENG Term Member (selected from Planning and Priorities Committee) Faculty Member (selected by Senate

  10. Finance Committee Terms of Reference, Membership and Operating Procedures

    E-Print Network [OSTI]

    Botea, Adi

    95/2012 Finance Committee ­ Terms of Reference, Membership and Operating Procedures Principles 1 on, or pose any reasonable risk to, the University's finances and operations" section 18(4)(d). 3. Council has established a Finance Committee as a committee of Council. 4. The broad purpose of the Finance

  11. Rutgers Business School Corporate Finance

    E-Print Network [OSTI]

    Lin, Xiaodong

    Rutgers Business School Corporate Finance Fall 2014 Instructor: Vikram Nanda Office: 5186 to the basic and current research questions and methods ­ theoretical and empirical ­ in corporate finance areas in corporate finance. Among these: · Tirole, Corporate Finance · Finance Handbooks such as: Jarrow

  12. ISSUANCE 2015-06-08: Solicitation of Nominations for Membership on the Appliance Standards and Rulemaking Federal Advisory Committee

    Broader source: Energy.gov [DOE]

    Solicitation of Nominations for Membership on the Appliance Standards and Rulemaking Federal Advisory Committee

  13. Antecedents of corporate volunteerism 

    E-Print Network [OSTI]

    Henning, Jaime Blaine

    2009-05-15

    with volunteering in general, few studies have examined variables beyond simple demographics, and fewer still have examined antecedents of corporate volunteering. In the current study, the theory of planned behavior, functional motives for volunteering...

  14. Island Wide Management Corporation

    Office of Legacy Management (LM)

    9 1986 Island Wide Management Corporation 3000 Marcus Avenue Lake Success, New York 11042 Dear Sir or Madam: I am sending you this letter and the enclosed information as you have...

  15. Implementing a Corporate Energy Management System | Department...

    Office of Environmental Management (EM)

    Implementing a Corporate Energy Management System Implementing a Corporate Energy Management System This presentation discusses 3M's experience with implementing a corporate energy...

  16. 2009 IBM Corporation 2009 IBM Corporation IMS and Java

    E-Print Network [OSTI]

    1 © 2009 IBM Corporation© 2009 IBM Corporation IMS and Java for Application Modernization Barbara November 4-5, 2009 This presentation discusses use of IMS and Java to modernize your applications. #12;2 2 IMS © 2009 IBM Corporation Agenda Java basics IMS Java basics IMS Java Applications IMS Database

  17. Essays in Behavioral Corporate Finance

    E-Print Network [OSTI]

    Zheng, Hui

    2012-01-01

    and practice of corporate finance: evidence from the field,Journal of Applied Corporate Finance 15, 8–23. 18. Graham,governance, Journal of Finance 63, 2737–2784. 21. Hackbarth,

  18. EEE 4263 & 5263 Corporate Entrepreneurship

    E-Print Network [OSTI]

    5) Innovation at 3M Corporation, HBS 9-699-012 July 2002 6) IDEO Product Development, HBS 2007 9 of the overall corporate strategy to renew a company's product lines or services, or offer totally new products.H, Kuratko, D.F, and Covin, J.G., 2010 Corporate Entrepreneurship & Innovation, 3rd Edition, Cengage Learning

  19. IBM Research 2006 IBM Corporation

    E-Print Network [OSTI]

    Chen, Yuanzhu Peter

    IBM Research © 2006 IBM Corporation Who is the customer? Dinesh Verma IBM Thomas J Watson Research Center #12;IBM Research © 2006 IBM Corporation2 IWQoS 2006 Introduction QoS Research has been going is the customer for QoS? #12;IBM Research © 2006 IBM Corporation3 IWQoS 2006 QoS is the Answer- So What

  20. Press Release Corporate Communications

    E-Print Network [OSTI]

    Reggelin, Michael

    Page: 1/2 Press Release Corporate Communications Karolinenplatz 5 D-64289 Darmstadt Germany Your.ch@pvw.tu- darmstadt.de Internet: http://www.tu- darmstadt.de/presse e-mail: presse@tu-darmstadt.de Winner. Press contact: Dr. Miriam Ronzoni Tel.: +49-(0)152­266­04064 e-mail: ronzoni@soz.uni-frankfurt.de PR

  1. High Level Waste Corporate Board Charter

    Office of Environmental Management (EM)

    actionable recommendations to senior EM management. Membership The following are standing Members of the Board: * Deputy Assistant Secretary (DAS) for Engineering and...

  2. Mixed Membership Models for Rank Data: Investigating Structure in Irish Voting Data

    E-Print Network [OSTI]

    Wolfe, Patrick J.

    the population. Thus, mixed membership models provide a method for model-based soft clustering of data. The mixed21 Mixed Membership Models for Rank Data: Investigating Structure in Irish Voting Data Isobel ........................................................................ 444 21.3.1 The Plackett-Luce Model for Rank Data ............................................ 445 21

  3. Benchmarking Corporate Energy Management 

    E-Print Network [OSTI]

    Norland, D. L.

    2001-01-01

    CORPORATE ENERGY MANAGEMENT Dr. Douglas L. Norland Director of Research and Industrial Programs Alliance to Save Energy Washington, DC ABSTRACT There is growing interest among energy managers in finding out how their company's energy management... procedures and perfonnance compare to that of other companies. Energy management involves everything from setting goals and targets to implementing best maintenance practices. This paper, however, discusses benchmarking energy management practices...

  4. Industrial Analytics Corporation

    SciTech Connect (OSTI)

    Industrial Analytics Corporation

    2004-01-30

    The lost foam casting process is sensitive to the properties of the EPS patterns used for the casting operation. In this project Industrial Analytics Corporation (IAC) has developed a new low voltage x-ray instrument for x-ray radiography of very low mass EPS patterns. IAC has also developed a transmitted visible light method for characterizing the properties of EPS patterns. The systems developed are also applicable to other low density materials including graphite foams.

  5. Corporate Environmental Performance and Lobbying

    E-Print Network [OSTI]

    Delmas, Magali A; Lim, Jinghui; Nairn-Birch, Nicholas

    2015-01-01

    Corporate America and environmental policy: How often doesfailure and the environmental policies of firms: Economicexemplified in the environmental policy context, where the

  6. Corporate Environmental Performance and Lobbying

    E-Print Network [OSTI]

    Delmas, Magali A; Lim, Jinghui; Nairn-Birch, Nicholas

    2015-01-01

    Corporate America and environmental policy: How often doesfailure and the environmental policies of firms: EconomicReview of Environmental Economics and Policy, 2: 240–260.

  7. Corporate Environmental Performance and Lobbying

    E-Print Network [OSTI]

    Delmas, Magali A; Lim, Jinghui; Nairn-Birch, Nicholas

    2015-01-01

    political activities on climate change. Business & Society,E. P. 2012. Influencing climate change policy: The effect ofvisibility on corporate climate change disclosure. Journal

  8. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700, 1. .&. ' , c 1 1; -.ll 1 ' 1CORPORATION

  9. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700, 1. .&. ' , c 1 1; -.ll 1 ' 1CORPORATION1

  10. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700, 1. .&. ' , c 1 1; -.ll 1 'CORPORATION

  11. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700, 1. .&. ' , c 1 1; -.ll 1 'CORPORATION53

  12. IBM Research 2005 IBM Corporation

    E-Print Network [OSTI]

    Cascaval, Calin

    IBM Research © 2005 IBM Corporation HPC Challenge 2005 Awards Competition: UPC on BlueGene/L C. Cacaval, C. Barton, G. Almási, Y. Zheng, M. Farreras, P. Luk, R. Mak IBM Research and IBM SWG Toronto #12;IBM Research © 2005 IBM Corporation2 HPC Challenge Awards Competition Class 2 Nov. 15, 2005

  13. 2002 IBM Corporation IBM Research

    E-Print Network [OSTI]

    1 © 2002 IBM Corporation IBM Research High-performance computing techniques for neuro-image analysis A. Ravishankar Rao IBM T.J. Watson Research Center Yorktown Heights, NY #12;IBM Research © 2008 IBM Corporation 2 Acknowledgements Guillermo Cecchi, IBM Research Marcelo Magnasco, Rockefeller

  14. Shanghai Aerospace Industrial General Corporation aka Shanghai...

    Open Energy Info (EERE)

    Aerospace Industrial General Corporation aka Shanghai Academy of Spaceflight Technology Jump to: navigation, search Name: Shanghai Aerospace Industrial General Corporation (aka...

  15. LANL named 2010 top corporate volunteer organization

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2010 top corporate volunteer organization LANL named 2010 top corporate volunteer organization The Laboratory ranked ahead of dozens of other qualifying companies with 10,000 or...

  16. AmpluseCorporation.pdf | Department of Energy

    Office of Environmental Management (EM)

    AmpluseCorporation.pdf AmpluseCorporation.pdf More Documents & Publications BattelleVentures.pdf Commercializing Department of Energy Technologies: Success...

  17. Preliminary Notice of Violation, International Technology Corporation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Technology Corporation - EA-1999-01 Preliminary Notice of Violation, International Technology Corporation - EA-1999-01 February 26, 1999 Issued to International Technology...

  18. Pacific Fuel Cell Corporation | Open Energy Information

    Open Energy Info (EERE)

    Fuel Cell Corporation Jump to: navigation, search Name: Pacific Fuel Cell Corporation Address: 26985 Lakeland Blvd. Place: Euclid, Ohio Zip: 44132 Sector: Buildings, Efficiency,...

  19. PROJECT PROFILE: Vermont Energy Investment Corporation (Solar...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vermont Energy Investment Corporation (Solar Market Pathways) PROJECT PROFILE: Vermont Energy Investment Corporation (Solar Market Pathways) Title: Vermont Solar Development Plan...

  20. I/UCRC Industrial Membership Agreement Industry/University Cooperative Research Center

    E-Print Network [OSTI]

    Kavi, Krishna

    1 I/UCRC Industrial Membership Agreement Industry/University Cooperative Research to as "ACADEMIC MEMBERS") as an INDUSTRY MEMBER in a cooperative effort to support an Industry/University Cooperative Research Center for Net- centric and Cloud Software

  1. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  2. The Farm and Ranch Corporation

    E-Print Network [OSTI]

    Brints, Norman; Sartin, Marvin

    1980-01-01

    ......................................................... 12 Liquidation ................................................................ 12 The Farm and Ranch Corporation Norman Brints and Marvin Sartin* As the family farm or ranch grows in size and complexity, many farm operators are examining...

  3. Renewable Energy Tax Credit (Corporate)

    Broader source: Energy.gov [DOE]

    In addition, Kentucky corporate taxpayers may take a credit equal to $3 per watt (DC) of rated capacity for the installation of a photovoltaic (PV) system. Solar and wind technologies have a maxi...

  4. Karnataka Power Corporation Limited and National Thermal Power...

    Open Energy Info (EERE)

    Karnataka Power Corporation Limited and National Thermal Power Corporation JV Jump to: navigation, search Name: Karnataka Power Corporation Limited and National Thermal Power...

  5. Steffes Corporation Smart Grid RFI: Addressing Policy and Logistical...

    Office of Environmental Management (EM)

    Steffes Corporation Smart Grid RFI: Addressing Policy and Logistical Challenges Steffes Corporation Smart Grid RFI: Addressing Policy and Logistical Challenges Steffes Corporation...

  6. Chemical Tagging of FGK Stars: Testing Membership to Young Stellar Kinematics Groups

    E-Print Network [OSTI]

    Montes, D; Hernandez, J I Gonzalez

    2015-01-01

    In this contribution talk we summarize the results of our ongoing project of detailed analysis of the chemical content (chemical tagging) as a promising powerful method to provide clear constraints on the membership of FGK kinematic candidates to stellar kinematic groups of different ages that can be used as an alternative or complementary to the methods that use kinematics, photometry or age indicators. This membership information is very important to better understand the star formation history in the solar neighborhood discerning between field-like stars (associated with dynamical resonances (bar) or spiral structure) and real physical structures of coeval stars with a common origin (debris of star-forming aggregates in the disk). We have already applied the chemical tagging method to constrain the membership of FGK candidate stars to the Hyades supercluster and the Ursa Major moving group and in this contribution we present the preliminary results of our study of the Castor moving group.

  7. The Sealion Corporation- 2011 Project

    Broader source: Energy.gov [DOE]

    The Sea Lion Corporation (SLC), an Alaska Native Claims Settlement Act village corporation, is to conduct an energy efficiency feasibility study with the goal to create jobs by providing funding to train staff to be energy raters as well as weatherization/energy conservation technicians that specialize in building construction and energy savings technologies; and to conduct a feasibility study that demonstrates a 30% reduction in residential/commercial energy usage and identify the economic benefits of implementing energy efficiency measures to the tribe.

  8. Verenium Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJThin FilmUnitedVairex CorporationVerenium Corporation Jump to:

  9. The Market for Borrowing Corporate Bonds

    E-Print Network [OSTI]

    Asquith, Paul

    This paper describes the market for borrowing corporate bonds using a comprehensive data set from a major lender. The cost of borrowing corporate bonds is comparable to the cost of borrowing stock, between 10 and 20 basis ...

  10. Corporate decision analysis : an engineering approach

    E-Print Network [OSTI]

    Tang, Victor, Ph.D. Massachusetts Institute of Technology

    2006-01-01

    We explore corporate decisions and their solutions under uncertainty using engineering methods. Corporate decisions tend to be complex; they are interdisciplinary and defy programmable solutions. To address these challenges, ...

  11. Beyond Compliance: Integrating Nonproliferation into Corporate Sustainability

    SciTech Connect (OSTI)

    Hund, Gretchen; Kurzrok, Andrew J.

    2013-06-01

    This paper investigates nonproliferation as a potential corporate sustainability value. It reviews the history of corporate sustainability, builds the case for nonproliferation as a sustainability value, and develops recommendations for the integration of nonproliferation into the frameworks of sustainability.

  12. Developing a Corporate Water Management Strategy 

    E-Print Network [OSTI]

    Tutterow, V.

    2015-01-01

    MANAGEMENT STRATEGY Vestal Tutterow Senior Technical Consultant (o) 703.748.7248 Vestal.tutterow@ppc.com June 4, 2015 PPC | Developing a Corporate Water Management Strategy 1 PRESENTATION OUTLINE PPC | Developing a Corporate Water Management Strategy 2...

  13. Corporate governance : the case for Asian REITs

    E-Print Network [OSTI]

    Tan, Denise, S.M. Massachusetts Institute of Technology

    2009-01-01

    At the entity level, the design of sound corporate governance mechanisms is critical for REITs that are preparing to go public. At the industry level, issues of transparency and corporate governance are consequential to ...

  14. Corporate Real Estate and Facilities Cost Reduction IBM Corporation | December 2, 2009 Page 1 of 7

    E-Print Network [OSTI]

    Corporate Real Estate and Facilities Cost Reduction © IBM Corporation | December 2, 2009 Page 1 of 7 - Internal distribution only Corporate Real Estate and Facilities Cost Reduction Summary By moving and facilities costs by 15-20%, whilst still improving services. Successful cost reduction in corporate real

  15. Energy Conservation in China North Industries Corporation 

    E-Print Network [OSTI]

    You, W. T.; De, C. H.; Chu, J. X.; Fu, L. R.

    1985-01-01

    IN CHINA NORTH INDUSTRIES CORPORATION Wang Tian You, Chen Hua De, Jing Xing Chu, Ling Rui Fu, China North Industries Corporation Beijing, People's Republic of China ABSTRACT This paper describes an overview of the energy conservation in China... North Industries Corporation. It shows how the corporation improves energy effi ciencies and how it changes constitution of fuel-- converting oil consumption to coal. Energy management organization, energy balance in plants and several specific...

  16. Mastermind Session: Wisconsin Energy Conservation Corporation...

    Broader source: Energy.gov (indexed) [DOE]

    Peer Exchange Call: Program Sustainability Mastermind Session, featuring host Brian Driscoll, Wisconsin Energy Conservation Corporation. Call Slides and Discussion Summary,...

  17. Product Information Management 2004 IBM Corporation

    E-Print Network [OSTI]

    Brock, David

    Product Information Management © 2004 IBM Corporation Intelligent Networks MIT Smart World 2004 Center © 2004 IBM Corporation2 Networks are both clusters of computers and clusters of people! We now use © 2004 IBM Corporation3 Three looks into Intelligent Networks Global Data Synchronization Electronic

  18. Corporate Headquarters 317 Route 104

    E-Print Network [OSTI]

    Firestone, Jeremy

    utilizing wind industry best practices, setbacks from residential and/or sensitive environmental areas areas to evaluate the shadow flicker impacts from the UD wind turbine. The receptors are representative@sed-net.com Sustainable Energy Developments, Inc. is a New York Corporation Founded April 2002 Shadow Flicker Analysis

  19. Hindawi Publishing Corporation Prostate Cancer

    E-Print Network [OSTI]

    Ahn, Hongshik

    Hindawi Publishing Corporation Prostate Cancer Volume 2011, Article ID 176164, 7 pages doi:10.1155/2011/176164 Clinical Study Effect of Zoledronic Acid on Bone Mineral Density in Men with Prostate Cancer Receiving cancer is well recognized. We assessed the effects of quarterly infusion of zoledronic acid on bone

  20. Fuzzy membership function optimization for system identification using an extended Kalman filter

    E-Print Network [OSTI]

    Simon, Dan

    dynamic system of a permanent magnet synchronous motor. The other interesting observation made dynamic system of a permanent magnet stepper motor. It is shown that the Kalman filter identifies: The generation of membership functions for fuzzy systems is a challenging problem. In this paper, we use

  1. Submitted to Risk Analysis The Roles of Group Membership, Beliefs, and Norms in Ecological

    E-Print Network [OSTI]

    Submitted to Risk Analysis The Roles of Group Membership, Beliefs, and Norms in Ecological Risk WORDS: Ecological risk; factor analysis; individual differences; New Environmental Paradigm@rand.org. #12;2 Willis & DeKay Submitted to Risk Analysis 1. INTRODUCTION Many variables influence people

  2. CAST RESEARCH COMMITTEE Membership: 7 appointed faculty and the CAST Associate Dean for Research

    E-Print Network [OSTI]

    Branoff, Theodore J.

    CAST RESEARCH COMMITTEE Membership: 7 appointed faculty and the CAST Associate Dean for Research and experience researcher. The Associate Dean for Research chairs the Committee and serves an ex officio member board to the Associate Dean for Research in the evaluation and formation of CAST policies related

  3. India Task Force Recommendations Membership: Venugopal Mendu (CASNR), Costica Bradatan (Honors), Rajesh Khara

    E-Print Network [OSTI]

    Rock, Chris

    India Task Force Recommendations Membership: Venugopal Mendu (CASNR), Costica Bradatan (Honors from India. Consider involving current Indian students at TTU and their home institutions or other with interests or connections to schools in India and a roster on TTU faculty travel to India for conferences

  4. Hydrocarbon Signatures of Egg Maternity, Caste Membership and Reproductive Status in the Common Wasp

    E-Print Network [OSTI]

    Wenseleers, Tom

    Hydrocarbon Signatures of Egg Maternity, Caste Membership and Reproductive Status in the Common-laid and worker-laid eggs has never been investigated. Our aim, therefore, was to investigate if hydrocarbons on the surface of newly-laid eggs, and that there are pronounced quantitative differences in the hydrocarbon

  5. Application for Public Health Membership of The University of Manchester Library

    E-Print Network [OSTI]

    Abrahams, I. David

    Application for Public Health Membership of The University of Manchester Library Public Health Health Care Libraries Unit 1 General Information PLEASE PRINT IN BLOCK CAPITALS Surname: ............................................................. Email: Have you previously had a card from this University or Library? YES/NO Previous Library card

  6. Current Committee Membership COUHES (Use of Humans as Experimental Subjects, Committee on

    E-Print Network [OSTI]

    Polz, Martin

    Current Committee Membership COUHES (Use of Humans as Experimental Subjects, Committee on the) The Committee on the Use of Humans as Experimental Subjects is responsible for reviewing every research project utilizing humans as research subjects, and for devising effective procedures to ensure the adequate review

  7. BASF Corporate Energy Management Process 

    E-Print Network [OSTI]

    Geiger, T.

    2014-01-01

    North America 6 ESL-IE-14-05-30 Proceedings of the Thrity-Sixth Industrial Energy Technology Conference New Orleans, LA. May 20-23, 2014 7Management Commitment Assess Performance & Set Goals Implement Action Plan Create Action Plan Recognize... Optimization (EM) 2009 Compressed Air Optimization (EM) 2009 Energy Efficiency Program (EM) Recognition: American Chemistry Council Responsible Care® Energy Efficiency Awards 2009 Corporate Energy Efficiency Improvement Goal 2010 Geismar Ethylene Oxide Plant...

  8. Corporate Exemption | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)| Open(Evans,Oregon:Volcano, HawaiiCorporate Depreciation

  9. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  10. NEC Corporation Volkswagen Group of America

    E-Print Network [OSTI]

    FELLOWS Cisco Intel NEC Corporation Volkswagen Group of America RESEARCH CONTRACTS AND SPECIAL Univision Viacom Volkswagen Group of America, Inc. VSP Global Welspun ENDOWMENT AND NAMING GRANTS Asahi

  11. BARNSTEAD|THERMOLYNE CORPORATION High Temperature

    E-Print Network [OSTI]

    Walker, D. Greg

    1 BARNSTEAD|THERMOLYNE CORPORATION High Temperature Muffle Furnace OPERATION MANUAL AND PARTS LIST ....................................................................................................................................................13 Furnace Connection: .........................................................................................................................13 General Operation of Furnace

  12. Resources, real options, and corporate strategy

    E-Print Network [OSTI]

    Bernardo, Antonio; Chowdhry, Bhagwan

    1998-01-01

    211–234 Resources, real options, and corporate strategy $D83; G30; G31 Keywords: Real options; Valuation; Corporateparticipants at the Real Options Conference at Northwestern

  13. Comments of North American Electric Reliability Corporation ...

    Office of Environmental Management (EM)

    RFI. North American Electric Reliability Corporation (NERC) More Documents & Publications City Utilities of Springfield Missouri Comments on Smart Grid RFI: Addressing Policy and...

  14. Corporate Performance Measures Definitions | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Corporate Performance Measures Plutonium Metal or Oxide packaged for long-term storage (number of containers): Certified DOE storagetreatmentdisposal (STD) 3013 containers (or...

  15. PPP Equipment Corporation | Open Energy Information

    Open Energy Info (EERE)

    PPP Equipment Corporation Sector: Solar Product: PPP-E designs, produces and markets Chemical Vapor Deposition (CVD) reactors and converter systems producing high-purity...

  16. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  17. BASF Corporate Energy Management Process 

    E-Print Network [OSTI]

    Geiger, T.

    2015-01-01

    .E.M Vice President, Energy and Verbund Management Industrial Energy Technology Conference June 4, 2015 1 Proceedings of the Thrity-Seventh Industrial Energy Technology Conference New Orleans, LA. June 2-4, 2015 ESL-IE-15-06-42 150 years Corporate Energy... Technology Conference New Orleans, LA. June 2-4, 2015 ESL-IE-15-06-42 150 years • The world’s leading chemical company • Serves all major industries • 380 production facilities including six Verbund sites • World-class, innovative, high-value products...

  18. Terrawatt Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al., 2013) | Opensource HistoryTerraWatt Power JumpCorporation Jump to:

  19. Emcore Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH JumpEllenville, New York: EnergyElyria, Ohio: EnergyEmcore Corporation

  20. Ennovate Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH JumpEllenville, NewLtdEnergypedia JumpEnhancedEnnovate Corporation

  1. Itochu Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy ResourcesOrder at 8,Open EnergyIssaquah, Washington:Itochu Corporation Jump

  2. Octillion Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPI VenturesNewSt. Louis,EnergyOctillion Corporation Jump to: navigation, search

  3. Odyne Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPI VenturesNewSt. Louis,EnergyOctillion Corporation Jump to:Odessa,

  4. Pemery Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio Program |ViewIllinois: EnergyPelham, NewPemery Corporation Jump to:

  5. Ember Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:of theClimateElgin, Illinois: EnergyEllergreenCorporation

  6. Arzeda Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to: navigation,Summaries |AreteArianeEnergyArzeda Corporation

  7. Kirmart Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavyAgency (IRENA) Jump to: navigation,WindJustKirmart Corporation

  8. Arete Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to: navigation,Summaries |Arete Corporation Jump to:

  9. Liquafaction Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervarLeeds, UnitedLiberty PowerLineLiquafaction Corporation Jump

  10. NEO Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to: navigation,Mereg GmbHMontebalitoMtMxEnergyDatabaseNEO Corporation

  11. Hilti Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA JumpDuimen River PowerHeckertHidrotermica JumpPowerHilti Corporation

  12. Ryuseki Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg,EnergyEastCarbon Development | Open EnergyRyuseki Corporation

  13. Tokuyama Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc JumpHeterInformation PolicyTinna Group Jump to:Tokuyama Corporation Place:

  14. Sipex Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS ReportEurope GmbH Jump to:Idaho-Utah |Renovables SCRSipex Corporation

  15. Synapsense Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS ReportEuropeEnergySustainabilitySynapsense Corporation Jump to:

  16. TDK Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS ReportEuropeEnergySustainabilitySynapsenseSyracuse,TDK Corporation

  17. Ultralife Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJThin Film SolarTown(LECBP)BioGen LLCANDUltimate Best BuyCorporation

  18. Vairex Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJThin FilmUnitedVairex Corporation Jump to: navigation, search Name:

  19. Carbona Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,Cammack Village, Arkansas:Fund for Spanish FirmsCarbona Corporation Jump

  20. Corporate Depreciation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)| Open(Evans,Oregon:Volcano, HawaiiCorporate Depreciation Jump

  1. ISE Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View NewGuam:on Openei | Open Energy2010) |OutlookINDEXISE Corporation

  2. ZTEK Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (UtilityMichigan) JumpZhuyuan Electric Development Co LtdZZTEK Corporation

  3. CDI Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County, California: Energy Resources Jump to:Information72CDI Corporation

  4. corporate | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLos AlamosSimulation Initiative7 BoundarycontainersconvertCorporate

  5. Kenetech Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavyAgency (IRENA) Jump to: navigation,WindJust WindCorporation Jump

  6. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  7. Statement by Harvard Corporation Committee on Shareholder Responsibility (CCSR) Regarding Stock in China Petroleum and Chemical Corporation (Sinopec Corporation)

    E-Print Network [OSTI]

    , Petrodar announced that its first shipment of crude oil would be shipped from Sudan in January 2006Statement by Harvard Corporation Committee on Shareholder Responsibility (CCSR) Regarding Stock the Harvard Corporation's decision to direct Harvard Management Company (HMC) to divest itself of stock held

  8. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  9. EA-356 J.P. Morgan Commodities Canada Corporation | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EA-356 J.P. Morgan Commodities Canada Corporation EA-356 J.P. Morgan Commodities Canada Corporation Order authorizing J.P. Morgan Commodities Canada Corporation to export electric...

  10. Is Sustainability Attractive for Corporate Real Estate

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Is Sustainability Attractive for Corporate Real Estate Decisions ? Research Center ESSEC Working Is Sustainability Attractive for Corporate Real Estate Decisions? Ingrid Nappi-Choulet Professor ESSEC BUSINESS SCHOOL Real Estate and Sustainable Development Chair nappi@essec.fr Aurélien Décamps Researcher ESSEC

  11. 2011 IBM Corporation Computer system energy management

    E-Print Network [OSTI]

    Shi, Weisong

    © 2011 IBM Corporation Computer system energy management Charles Lefurgy 28 July 2011 #12;© 2011 IBM Corporation2 Outline A short history of server power management POWER7 EnergyScale AMESTER power management 2010: POWER7 uses DDR3 self-refresh mode POWER7 with Turbo mode Partition-aware power capping 2011

  12. Corporate Training On-Site Online Global

    E-Print Network [OSTI]

    Barrett, Jeffrey A.

    MAKE THE RIGHT MOVE Corporate Training On-Site · Online · Global IMPROVE YOUR COMPETITIVE ADVANTAGE WITH WORLD-CLASS ON-SITE AND ONLINE SOLUTIONS TAILORED TO MEET YOUR BUSINESS AND EMPLOYEE TRAINING NEEDS a competitive advantage depends on how well your staff executes. UCIrvineExtension's Corporate Training helps

  13. The MITRE Corporation 7515 Colshire Drive

    E-Print Network [OSTI]

    Tritium JASON The MITRE Corporation 7515 Colshire Drive McLean, Virginia 22102-7508 (703) 983 ORGANIZATION REPORT NUMBER The MITRE Corporation JASON Program Office 7515 Colshire Drive McLean, Virginia of tritium per year of operation which must be bred as part of the overall reactor cycle. Traditionally

  14. Comments of New England Electric Transmission Corporation on...

    Office of Environmental Management (EM)

    out of time and comments of New England Electric Transmission Corporation, New England Hydro-Transmission Electric Company, Inc. and New England Hydro-Transmission Corporation and...

  15. EA-1631: Beacon Power Corporation Frequency Regulation Facility...

    Office of Environmental Management (EM)

    1: Beacon Power Corporation Frequency Regulation Facility in Stephentown, NY EA-1631: Beacon Power Corporation Frequency Regulation Facility in Stephentown, NY February 2, 2009...

  16. IT Capital Planning Corporate Management Improvement Program (CMIP)

    Broader source: Energy.gov [DOE]

    The Corporate Management Improvement Program (CMIP) was initiated by the Department in recognition of the fact that corporate legacy systems that support administrative functions were nearing the...

  17. Sylvania Corporation, Hicksville, NY and Bayside, NY - Addendum...

    Energy Savers [EERE]

    NY - Addendum to July 8, 2004 Sylvania Corporation, Hicksville, NY and Bayside, NY - Addendum to July 8, 2004 Sylvania Corporation, Hicksville, NY and Bayside, NY - Addendum to...

  18. Trony Solar Corporation formerly Shenzhen Trony Science Technology...

    Open Energy Info (EERE)

    Trony Solar Corporation formerly Shenzhen Trony Science Technology Development Co Ltd Jump to: navigation, search Name: Trony Solar Corporation (formerly Shenzhen Trony Science &...

  19. New York State Electric & Gas Corporation Smart Grid Demonstration...

    Open Energy Info (EERE)

    New York State Electric & Gas Corporation Smart Grid Demonstration Project Jump to: navigation, search Project Lead New York State Electric & Gas Corporation Country United States...

  20. EA-1727: AE Polysilicon Corporation Polysilicon Production Facility...

    Office of Environmental Management (EM)

    7: AE Polysilicon Corporation Polysilicon Production Facility in Fairless Hills, PA EA-1727: AE Polysilicon Corporation Polysilicon Production Facility in Fairless Hills, PA...

  1. Shenyang Huachuang Wind Energy Corporation HCWE aka China Creative...

    Open Energy Info (EERE)

    Shenyang Huachuang Wind Energy Corporation HCWE aka China Creative Wind Energy Co Ltd Jump to: navigation, search Name: Shenyang Huachuang Wind Energy Corporation (HCWE) (aka China...

  2. Performance Assessment and Recommendations for Rejuvenation of a Permeable Reactive Barrier: Cotter Corporation’s Cañon City, Colorado, Uranium Mill

    Broader source: Energy.gov [DOE]

    Performance Assessment and Recommendations for Rejuvenation of a Permeable Reactive Barrier: Cotter Corporation’s Canon City, Colorado, Uranium Mill (April 2005)

  3. Application for Associate Membership at CERN by the Government of the Islamic Republic of Pakistan Report by the fact-finding Task Force

    E-Print Network [OSTI]

    2014-01-01

    Application for Associate Membership at CERN by the Government of the Islamic Republic of Pakistan Report by the fact-finding Task Force

  4. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  5. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  6. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  7. 1 1999 Rational Software Corporation The View from the Front

    E-Print Network [OSTI]

    Demurjian, Steven A.

    1 ©1999 Rational Software Corporation 3/7/99 R UML The View from the Front James Rumbaugh 9 March 1999 Rational Software Corporation #12; 2 ©1999 Rational Software Corporation 3/7/99 R Evolution Start 1/95 UML 1.3 RTF report 4/99 OMG feedback #12; 3 ©1999 Rational Software Corporation 3/7/99 R UML

  8. IBM Research Zurich 2010 IBM Corporation

    E-Print Network [OSTI]

    & Computational Science: Business Optimization, Computational Sciences, Data Analytics Systems: Server Technology: Semiconductors, Systems, Beyond the Transistor, Nanotechnology, Biotechnology Computer Science: SecurityIBM Research ­ Zurich © 2010 IBM Corporation IBM Research Zurich A Strategy of Open Innovation Dr

  9. Refundable Clean Heating Fuel Tax Credit (Corporate)

    Broader source: Energy.gov [DOE]

    The state of New York began offering a corporate income tax credit for biodiesel purchases used for residential space heating and water heating beginning in 2006. The original credit was authorized...

  10. Alternative Energy Development Incentive (Corporate) (Utah)

    Broader source: Energy.gov [DOE]

    The Alternative Energy Development Incentive (AEDI) is a post-performance non-refundable tax credit for 75% of new state tax revenues (including, state, corporate, sales and withholding taxes) over...

  11. Harvard University Corporation Committee on Shareholder Responsibility

    E-Print Network [OSTI]

    Schrag, Daniel

    environmental practices (including company efforts to address global warming); human rights; equal employment shareholders. Shareholder proposals addressing corporate governance matters are decided by the Harvard to issues of social responsibility. New topics addressed in 2011 included the environmental risks

  12. Essays on the Market for Corporate Control 

    E-Print Network [OSTI]

    Kim, Hyunjung

    2011-02-22

    This dissertation examines the relative importance of the information effect on corporate takeover in total takeover gains. It develops the measure of information effect based on the residual income valuation model with ...

  13. ArchRock Corporation | Open Energy Information

    Open Energy Info (EERE)

    Arch Rock is a systems and software company that builds products and technology for wireless sensor networks. References: ArchRock Corporation1 This article is a stub. You can...

  14. 3M's Corporate Approach to Energy Management 

    E-Print Network [OSTI]

    Schultz, S. C.; Bingham, P. R.

    2000-01-01

    number of companies have recognized the benefits of developing structured approaches to improving their energy efficiency through means that are also compatible with being environmentally responsible. 3M has long been recognized as a corporate...

  15. Spreadsheet Programming Robin Abraham, Microsoft Corporation

    E-Print Network [OSTI]

    Erwig, Martin

    Spreadsheet Programming Robin Abraham, Microsoft Corporation Margaret Burnett, Oregon State University Martin Erwig, Oregon State University Spreadsheets are among the most widely used programming first discuss how spreadsheet programs are actually functional programs. We then describe concepts

  16. Essays on consumption cycles and corporate finance

    E-Print Network [OSTI]

    Issler, Paulo Floriano

    2013-01-01

    In: The Journal of Finance 41.1, pp. 19–37. Flannery, Markand practice of corporate finance: evidence from the field”.Issues”. In: Journal of Finance 51.5, pp. 1809–33. Hamilton,

  17. Corporate Analysis of DOE Safety Performance

    Broader source: Energy.gov [DOE]

    The Office of Environment, Health, Safety and Security (EHSS), Office of Analysis develops analysis tools and performance dashboards, and conducts analysis of DOE safety performance corporately and on a variety of specific environment, safety and health topics.

  18. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  19. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  20. Corporate Reporting of Boiler MACT Energy Assessments 

    E-Print Network [OSTI]

    McClain, C.

    2013-01-01

    , but not recordkeeping and reporting costs. Estimating/projected number of affected units Summary of Total Capital and Annual Cost for the New and Existing Sources for the Final Amended Rule Federal Register Volume 78 No. 21 January 31, 2013 40 CFR Part 63 EPA... Orleans, LA. May 21-24, 2013 What are the benefits of Corporate Management? Benefits of Corporate Management EMRS and Boiler MACT Implementation ? Scarce resource management ? Mill Scheduling ? Uniform implementation ? Uniform reporting ESL-IE-13...

  1. Corporate social responsibility (CSR) : responsibility or Innovation? : an analysis of the feedback between CSR activities and the expectations placed upon corporations

    E-Print Network [OSTI]

    Rodriguez, Adrian Xavier

    2010-01-01

    This thesis uses case study and interview data to present a framework for analyzing corporate behavior in order to define corporate social responsibility (CSR). It answers the question: Can corporations tie corporate social ...

  2. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  3. De Morgan House, 57-58 Russell Square, London WC1B 4HS Tel: +44 (0)20 7637 3686 Fax: +44 (0)20 7323 3655 Email: membership@lms.ac.uk

    E-Print Network [OSTI]

    3655 Email: membership@lms.ac.uk Registered with the Charity Commissioners, no. 252660 December 2014 Dear LMS Member, I write to remind you that subscriptions, including payments for periodicals a direct debit or contact the Membership Department for further details (email: membership@lms.ac.uk, phone

  4. Modeling Temporal Behavior in Large Networks: A Dynamic Mixed-Membership Model

    SciTech Connect (OSTI)

    Rossi, R; Gallagher, B; Neville, J; Henderson, K

    2011-11-11

    Given a large time-evolving network, how can we model and characterize the temporal behaviors of individual nodes (and network states)? How can we model the behavioral transition patterns of nodes? We propose a temporal behavior model that captures the 'roles' of nodes in the graph and how they evolve over time. The proposed dynamic behavioral mixed-membership model (DBMM) is scalable, fully automatic (no user-defined parameters), non-parametric/data-driven (no specific functional form or parameterization), interpretable (identifies explainable patterns), and flexible (applicable to dynamic and streaming networks). Moreover, the interpretable behavioral roles are generalizable, computationally efficient, and natively supports attributes. We applied our model for (a) identifying patterns and trends of nodes and network states based on the temporal behavior, (b) predicting future structural changes, and (c) detecting unusual temporal behavior transitions. We use eight large real-world datasets from different time-evolving settings (dynamic and streaming). In particular, we model the evolving mixed-memberships and the corresponding behavioral transitions of Twitter, Facebook, IP-Traces, Email (University), Internet AS, Enron, Reality, and IMDB. The experiments demonstrate the scalability, flexibility, and effectiveness of our model for identifying interesting patterns, detecting unusual structural transitions, and predicting the future structural changes of the network and individual nodes.

  5. SPP Membership

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Western Area Power Administration (Western) Transmission and Ancillary Services Formula Rates for Pick-Sloan Missouri Basin Program--Eastern Division (P-SMBP--ED ) was...

  6. Membership Finland

    ScienceCinema (OSTI)

    None

    2011-04-25

    Le DG C.Rubbia et la vice présidente du conseil du Cern souhaite la bienvenue à l'adhésion de la Finlande, comme 15me membre du Cern depuis le 1. janvier 1991 en présence du secrétaire generale et de l'ambassadeur

  7. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  8. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  9. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  10. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  11. EnerVault Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH JumpEllenville, New York:CorporationEnerGeneticsEnerVault Corporation

  12. An Analytical Study of a Structured Overlay in the presence of Dynamic Membership

    E-Print Network [OSTI]

    Krishnamurthy, Supriya; Aurell, Erik; Haridi, Seif

    2007-01-01

    In this paper we present an analytical study of dynamic membership (aka churn) in structured peer-to-peer networks. We use a fluid model approach to describe steady-state or transient phenomena, and apply it to the Chord system. For any rate of churn and stabilization rates, and any system size, we accurately account for the functional form of the probability of network disconnection as well as the fraction of failed or incorrect successor and finger pointers. We show how we can use these quantities to predict both the performance and consistency of lookups under churn. All theoretical predictions match simulation results. The analysis includes both features that are generic to structured overlays deploying a ring as well as Chord-specific details, and opens the door to a systematic comparative analysis of, at least, ring-based structured overlay systems under churn.

  13. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  14. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  15. Corporate Energy Management: A Survey of Large Manufacturing Companies 

    E-Print Network [OSTI]

    Norland, D. L.; Lind, L.

    2000-01-01

    Corporate practices regarding energy management vary substantially from one company to another. Some companies pay close attention to energy use throughout the corporation while others pay scant attention. This paper first describes what we call...

  16. Corporate Entrepreneurship programs : practices and their implications in developing economies

    E-Print Network [OSTI]

    Teran, Marco (Marco A. Teran Aguilar)

    2012-01-01

    Corporate Entrepreneurship is driven by external demands and internal leadership. However, this process is difficult to implement in firms because it often conflicts with the core of corporate activities and the accumulated ...

  17. Copyright 2011 Northrop Grumman Corporation Northrop Grumman Information Systems (NGIS)

    E-Print Network [OSTI]

    from unattended sensors · Space vulnerabilities and survivability · Cyber security/informationCopyright © 2011 Northrop Grumman Corporation Northrop Grumman Information Systems (NGIS Northrop Grumman Corporation Page 2 1. Overview Information Sponsor ­Northrop Grumman Information Systems

  18. THE INTERFACE BETWEEN ENVIRONMENTAL ASSESSMENT AND CORPORATE RESPONSIBILITY: THE

    E-Print Network [OSTI]

    THE INTERFACE BETWEEN ENVIRONMENTAL ASSESSMENT AND CORPORATE RESPONSIBILITY: THE VICTOR DIAMOND Report No: 436 Title of Research Project: The Interface Between Environmental Assessment and Corporate: ___________________________________________ #12;iii ABSTRACT The environmental assessment and sustainable development literature recognizes

  19. 2011 Corporate Headquarters: An Analysis of Immediate Communities 

    E-Print Network [OSTI]

    Conti, Serena Nicole

    2013-04-25

    While the Bay Area’s history has shaped today’s culture, there is little written about how corporations affect their immediate communities. This thesis focuses on the largest corporations in the Bay Area to determine if ...

  20. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  1. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  2. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  3. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  4. May 21, 2004 2004 IBM Corporation Panel Discussion WWW 2004

    E-Print Network [OSTI]

    May 21, 2004 © 2004 IBM Corporation Panel Discussion WWW 2004 Kamal Bhattacharya IBM T. J. Watson Research Center Yorktown Heights, NY 10598 kamalb@us.ibm.com #12;© 2004 IBM Corporation Some Observations as low a possible #12;© 2004 IBM Corporation Some Observations (cont.) § The business owners define

  5. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion IntelCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo 6300 SPECfp

  6. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion IntelCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo SPEC CINT2006 ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la

  7. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion IntelCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo 6300 SPECfp2006

  8. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo 6300 SPECint2006://www.spec.org/ Page 2 SPEC CINT2006 ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias

  9. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel2006 ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo 6300 SPECfp2006 = Not Run SPECfp

  10. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion IntelCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo2006 ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion

  11. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo 6300 SPECfp2006://www.spec.org/ Page 3 SPEC CFP2006 ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de

  12. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo 6300 SPECint2006 = Not Run SPECint_base2006://www.spec.org/ Page 2 SPEC CINT2006 ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias

  13. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel2006 ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo 6300 SPECfp2006

  14. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo 6300 SPECint2006 = Not Run SPECint SPEC CINT2006 ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la

  15. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo 6300 SPECint2006 = Not Run SPECint://www.spec.org/ Page 2 SPEC CINT2006 ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias

  16. Standard Performance Evaluation Corporation info@spec.org

    E-Print Network [OSTI]

    Llanos, Diego R.

    ResultCopyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo 6300 SPECint2006 = Not Run SPECint_base2006Copyright 2006 Standard Performance Evaluation Corporation Sti Tecnologias de la Informacion Intel Core 2 Duo

  17. Corporate social responsibility and its impact on the corporate decision-making process for university undergraduate research fellows 

    E-Print Network [OSTI]

    Bain, Joseph E

    2013-02-22

    This study seeks to answer the question, "How does corporate social responsibility (CSR) influence corporate decision making?" It does so in two steps. The first step is the building of a theoretical framework in order ...

  18. Of Enterprise Principles & Corporate Groups: Does Corporate Law Reach Human Rights?

    E-Print Network [OSTI]

    Harper Ho, Virginia E.

    2013-03-01

    In recent years, a number of international and cross-sectoral initiatives have attempted to respond to the human rights impacts of corporations. Foremost among these is the United Nations’ 2008 “Protect, Respect, and Remedy” ...

  19. Hindawi Publishing Corporation Comparative and Functional Genomics

    E-Print Network [OSTI]

    Newcastle upon Tyne, University of

    Hindawi Publishing Corporation Comparative and Functional Genomics Volume 2007, Article ID 47304, 7 pages doi:10.1155/2007/47304 Meeting Report eGenomics: Cataloguing Our Complete Genome Collection III, Michigan State University, East Lansing, MI 48824, USA 3 The Institute for Genomic Research, 9712 Medical

  20. Corporate Venture Capital (CVC) Seeking Innovation and

    E-Print Network [OSTI]

    Corporate Venture Capital (CVC) Seeking Innovation and Strategic Growth Recent patterns in CVCRoberts, Professor of Management of Technology, Sloan School of Management, Massachusetts Institute of Technology ValLivada, Research Fellow, Sloan School of Management, Massachusetts Institute of Technology AndrewWang, Economist

  1. Hindawi Publishing Corporation Journal of Nanotechnology

    E-Print Network [OSTI]

    Wang, Yan Alexander

    Hindawi Publishing Corporation Journal of Nanotechnology Volume 2010, Article ID 801789, 42 pages a general interest in both fundamental and practical nanotechnology. Over the past 20 years, research's -orbital axis vector (POAV) #12;2 Journal of Nanotechnology (0,0) (1,0) (2,0) (3,0) (4,0) (5,0) (1,1) (2

  2. Structural Models and Endogeneity in Corporate Finance: The Link Between Managerial Ownership and Corporate Performance

    E-Print Network [OSTI]

    Coles, Jeffrey L.; Lemmon, Michael L.; Meschke, Felix

    2012-01-01

    Jeffrey L. Coles Arizona State University (ASU) - Finance Department Michael L. Lemmon University of Utah - Department of Finance Felix Meschke University of Kansas - Finance Area This version: April 14, 2011 Paper citation: Jeffrey L.... Coles, Michael L. Lemmon, J. Felix Meschke, Structural models and endogeneity in corporate finance: The link between managerial ownership and corporate performance, Journal of Financial Economics, Volume 103, Issue 1, January 2012, Pages 149-168, ISSN...

  3. Nano Science and Technology Institute search Go Home | Subscribe | Site Map ABOUT | COURSES | EVENTS | PUBLICATIONS | MEMBERSHIP | LEADERSHIP | OUTREACH | NEWS | PRESS | JOBS Nanotechnology Solutions

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    | EVENTS | PUBLICATIONS | MEMBERSHIP | LEADERSHIP | OUTREACH | NEWS | PRESS | JOBS Nanotechnology Solutions - Bionics, Biochips, Nanotechnology and MEMS Business are Just Some Topics to Discuss PRWEB - January 10 in the field. Bionics, Biochips, Drug Delivery, Biosensors, Energy Scavengers, RF MEMS, Nanotechnology, Bio

  4. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  5. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  6. Limited Liability Companies and Corporate Business Structures 

    E-Print Network [OSTI]

    Thompson, Bill; Polk, Wade; Hayenga, Wayne

    2009-01-07

    is also a key ad- vantage of incorporating. One disadvantage to incorporation is the potential for double taxation. Earnings that are taxed at the corporate level will be taxed a second time if disbursed as dividends or upon liquida- tion.... St. Louis, Missouri: Doanes Agricultural Services Co. Kole, Glenn A. and Sherrill B. Nott. 2001. Farm Organization Options. Staff Paper, pp. 2001- 43. Department of Agricultural Economics, Michigan State University, East Lansing. Thompson, William...

  7. The Corporate Headquarters for Alabama Power Company 

    E-Print Network [OSTI]

    Reardon, J. G.; Penuel, K. M.

    1987-01-01

    management systems are a prime objective f the company. Considerable attention has been give to the public information aspects during the desi n phase. The original equipment room layout and floor 478 ESL-IE-87-09-75 Proceedings from the Ninth Annual... tech nologies which are of mutual benefit to customer and utility. INTRODUCTION In order to consolidate all corporate head quarters personnel into a single facility, Alabama Power Company management initiated the design and construction of a...

  8. Financing energy efficiency via the Mortgage Corporation

    SciTech Connect (OSTI)

    Schaefer, M.L.

    1980-07-01

    Residential housing in the United States consumes more than 20% of all the energy used nationally each year. Home-mortgage lenders are in a position to assist homeowners in reducing this high level of energy consumption by taking advantage of a variety of financing methods now available to them. The Federal Home Loan Mortgage Corporation has taken several innovative steps to help support lenders' efforts to aid the homeowners of America in their quest to make their properties more energy-efficient.

  9. First Analysis Securities Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable Urban Transport Jump to: navigation, searchSecurities Corporation Jump

  10. Sekisui Jushi Corporation SJC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/ColoradoRemsenburg-Speonk,SageScheucoSedco Hills, California:Sekisui Jushi Corporation SJC

  11. Siemens Corporate Technology CT | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity for LowInformationShoshone County,SiCorporate Technology CT

  12. PowerSat Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975) |Texas:PottawattamiePowerSat Corporation Jump to: navigation,

  13. Colusa Biomass Energy Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)| Open EnergyColoradoBiomass Energy Corporation Jump to:

  14. Corporate International Operations | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)| Open(Evans,Oregon:Volcano, HawaiiCorporate

  15. Corporate Operating Experience Program | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data Center HomeVehicleDepartment of EnergyContacts for ServicesCorporate

  16. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  17. Hindawi Publishing Corporation International Journal of Photoenergy

    E-Print Network [OSTI]

    Chow, Lee

    GaAs triple junction solar cell has been proposed and carried out. With the same illumination area is properly cited. A complex solar unit with microcrystalline silicon solar cells placed around the centered and intensity, the total resultant power shows that the excess microcrystalline silicon solar cells increase

  18. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  19. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  20. EA-296-B Rainbow Energy Marketing Corporation | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Marketing Corporation Order authorizing Rainbow Energy to export electric energy to Canada. EA-296-B Rainbow Energy (CN).pdf More Documents & Publications RECORD of Categorical...

  1. Citizens Electric Corporation- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Citizens Electric Corporation offers rebates and price reductions to its residential customers for purchasing and installing energy efficient equipment. Eligible equipment and measures include a...

  2. Ambient Corporation's Reply comments to DOE RFI: Addressing Policy...

    Broader source: Energy.gov (indexed) [DOE]

    communications will play ineneabling utilities to deploy cost-effective long-term smart grid benefits. Ambient Corporation's Reply comments to DOE RFI: Addressing Policy and...

  3. PRELIMINARY SURVEY OF SYLVANIA-CORNING NUCLEAR CORPORATION METALLURGIC...

    Office of Legacy Management (LM)

    Corporaion Metallurgical Laboratory in Bayside, New York THE FORMER SYLVANIA-CORNING NUCLEAR CORPORATION, INC. METALLURGICAL LABORATORY Bayside, New York Site Function late...

  4. High-Level Waste Corporate Board Presentation Archive | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Triay High-Level Waste Corporate Board, Mark Gilbertson EM Engineering & Technology Roadmap and Major Technology Demonstrations Office of River Protection Idaho National...

  5. Federal Power Act section 202(c) - Mirant Corporation, August...

    Broader source: Energy.gov (indexed) [DOE]

    On August 24, 2005 in response to a decision by Mirant Corporation to cease generation of electricity at its Potomac River generating station, the District of Columbia Public...

  6. Testimonials- Partnerships in Battery Technologies- Capstone Turbine Corporation

    Broader source: Energy.gov [DOE]

    Robert Gleason, Senior Vice President of Product Development for Capstone Turbine Corporation describes the benefits of a strategic partnership with the U.S. Department of Energy.

  7. Testimonials- Partnerships in R&D- Capstone Turbine Corporation

    Broader source: Energy.gov [DOE]

    Darren Jamison, President and CEO of Capstone Turbine Corporation, shares his experience of partnering with the U.S. Department of Energy.

  8. Sandia Energy - ECIS-Automotive Fuel Cell Corporation: Hydrocarbon...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ECIS-Automotive Fuel Cell Corporation: Hydrocarbon Membrane Fuels the Success of Future Generation Vehicles Home Energy Transportation Energy CRF Partnership Energy Efficiency...

  9. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  10. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  11. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  12. Utica Corporation Plant-Wide Energy Assessment Report Final Summary (Entrance to Utica Corporation's Whitesboro Plant)

    SciTech Connect (OSTI)

    2002-03-01

    Utica Corporation conducted a plant-wide energy assessment of the manufacturing processes and utilities at its facility in Whiteboro, NY. As a result of the assessment, the company is now implementing six energy conservation projects that will result in significant cost savings and efficiency improvements.

  13. Corporate Social Responsibility Practices and Financial Performance over Time for Selected U.S. Corporations 

    E-Print Network [OSTI]

    Phelan Ribera, Kelli Catherine

    2011-10-21

    .......................................................................................................... 71 5 Descriptive Statistics of CSR Variable, Product, from 1991-2002 ......... 71 6 Descriptive Statistics of CSR Variable, Corporate Governance, from 1991... of Price Volatility Analysis ............................................................ 121 44 Summary of Between Groups Main Effects Analysis for Level of Price Volatility...

  14. Trexa Motor Corporation TMC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al., 2013)OpenEnergyTrail CanyonsourceRiver Solar |Trexa Motor Corporation

  15. SunLink Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing CapacityVectren)Model for theSunLan Solar Co Ltd Jump to:SunLink Corporation

  16. Hydra Fuel Cell Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy Resources JumpNewTexas: EnergyHunterdonHutto,Fuel Cell Corporation Jump to:

  17. GreenShift Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia:Oregon:Corp JumpGreen2V JumpGreenShift Corporation

  18. Global Electric Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable UrbanKentucky:BoreOpenGilliamOhio:Change | Open EnergyChange:Corporation

  19. Empire Natural Gas Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH JumpEllenville, New York:Corporation Jump to: navigation, search Name:

  20. EnerTeck Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH JumpEllenville, New York:CorporationEnerGenetics

  1. Sierra Energy Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity for LowInformationShoshone County,SiCorporateSiemensNewEnergy

  2. MSC Power Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma,Information MHKMHK5 < MHKKemblaSolar Jump to: navigation,Corporation

  3. Intan Carbon Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy ResourcesOrder at 8, 13 (Vt.InfinifuelInova EnergyIntan Carbon Corporation

  4. Premium Power Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975)Energy Technology Jump to: navigation,New MexicoCorporation

  5. National Energy Resource Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPI Ventures Ltd Jump to: navigation,Naples,Development andResource Corporation

  6. New Energy Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPI Ventures LtdNeville, Ohio: Energy ResourcesCorporation Jump to: navigation,

  7. Dongfang Electric Corporation DEC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:of the National Climate Change PolicyCorporation DEC Jump

  8. Lite On Technology Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervarLeeds, UnitedLibertyLite On Technology Corporation Jump to:

  9. Protonex Technology Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg,Energy LLCALLETE Inc dEA EISProjectProtected PlanetCorporation

  10. Holy Technology Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA JumpDuimen River PowerHeckertHidrotermicaPowerHochtiefCorporation

  11. Suryachakra Power Corporation Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc JumpHeter BatterySolarfinMarketMember CorpSunvie SASand PowerPower Corporation

  12. Solar Sentry Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS ReportEurope GmbH JumpSloughInfra Inc JumpSentry Corporation Jump to:

  13. Soshin Electric Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS ReportEurope GmbHSolo Energy JumpSoshin Electric Corporation Jump to:

  14. Catamount Energy Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,Cammack Village,8199089°, -86.3376761°Anadromous FishesCorporation Jump

  15. Catamount Resources Corporation CRC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,Cammack Village,8199089°, -86.3376761°Anadromous FishesCorporation

  16. China Technology Development Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR JumpMaine:WestTexas: EnergyExport PartnersCorporation Jump to:

  17. Free Flow Power Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePowerEdistoWhiskeyFootprint Ventures JumpIndiana:BuildingPower Corporation

  18. Composite Technology Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePower Ventures JumpCommercial Jump to:Technology Corporation Jump to:

  19. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  20. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  1. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  2. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  3. Design of a GaAs/Ge solar array for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Scheiman, D.A.; Colozza, A.J.; Brinker, D.J.; Bents, D.J.

    1994-12-31

    Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

  4. Design of a GaAs/Ge solar array for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Scheiman, D.A.; Brinker, D.J.; Bents, D.J.; Colozza, A.J.

    1995-03-01

    Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

  5. EA-137 NYSEG New York State Electric and Gas Corporation | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EA-137 NYSEG New York State Electric and Gas Corporation EA-137 NYSEG New York State Electric and Gas Corporation Order authorizing New York State Electric and Gas Corporation to...

  6. Classifying Web content for a corporate digital library Ian Thurlow

    E-Print Network [OSTI]

    Haddadi, Hamed

    Classifying Web content for a corporate digital library Ian Thurlow BT Abstract: The integration of relevant Web content into corporate digital libraries is expected to be of significant benefit when tools. The integration of Web content into a digital library, however, raises some concerns with regard

  7. Industrial Engineering 361 Six Sigma Making Corporations and

    E-Print Network [OSTI]

    Vardeman, Stephen B.

    Industrial Engineering 361 Six Sigma ­ Making Corporations and Stockholders... Kim Knuth Grant in the late 1980's. The term "Six Sigma" came to identify a popular form of corporate improvement://www.public.iastate.edu/~vardeman/stat531/sixsigma.pdf). Before we began research, we questioned the importance of Six Sigma and were

  8. Corporate social responsibility: learning from the BP oil spill

    E-Print Network [OSTI]

    . "The only thing that actually matters is corporate activity...if it's doing something real missions to combat climate change, give back to local communities, and communicate in an age of Facebook" program. This digital breed of corporate responsibility­building a "transparent" narrative on Facebook, 9

  9. Nolij Corporation Proprietary & Confidential Information Release Notes for Nolij Web

    E-Print Network [OSTI]

    Escher, Christine

    Nolij Corporation Proprietary & Confidential Information Release Notes for Nolij Web Release 6.3.x Web Release 6.3.x Copyright © 2010 - 2011, Nolij Corporation. All rights reserved. Revised 02Release Notes for Nolij Web Release 6.3.x Introduction These release notes provide information about new

  10. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  11. Fuel Cell Installation Improves Reliability and Saves Energy at a Corporate Data Center

    SciTech Connect (OSTI)

    2002-05-01

    In 2002, Chevron Energy Solutions implemented a fuel cell installation project at the corporate data center of Chevron Texaco's corporate headquarters in San Ramon, California.

  12. IS THE TAIL WAGGING THE DOG? AN EMPIRICAL ANALYSIS OF CORPORATE CARBON FOOTPRINTS AND FINANCIAL PERFORMANCE

    E-Print Network [OSTI]

    Delmas, Magali A; Nairn-Birch, Nicholas S.

    2011-01-01

    The importance of carbon footprint estimation boundaries.ANALYSIS OF CORPORATE CARBON FOOTPRINTS AND FINANCIALANALYSIS OF CORPORATE CARBON FOOTPRINTS AND FINANCIAL

  13. Corporate governance reform in a developing country : the case of Bangladesh 

    E-Print Network [OSTI]

    Sobhan, Md. Abdus

    2014-07-02

    Bangladesh reformed its corporate governance by adopting Bangladesh Corporate Governance Guidelines-2006 (the BCGG-2006 hereafter) due to pressures from international financial institutions (IFIs). However, there is huge ...

  14. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  15. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  16. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  17. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  18. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  19. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  20. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  1. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  2. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  3. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  4. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  5. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  6. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  7. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  8. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  9. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  10. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  11. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  12. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  13. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  14. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  15. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  16. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  17. QER- Comment of GenConn Energy on behalf of UIL Holdings Corporation

    Broader source: Energy.gov [DOE]

    Provided are comments of UIL Holdings Corporation on New England Regional Infrastructure Constraints.

  18. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  19. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  20. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  1. Fact #870: April 27, 2015 Corporate Average Fuel Economy Progress...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Progress, 1978-2014 The Corporate Average Fuel Economy (CAFE) is the sales-weighted harmonic mean fuel economy of a manufacturer's fleet of new cars or light trucks in a certain...

  2. Logistics barriers for multinational corporations doing business in China

    E-Print Network [OSTI]

    Luo, Manqin, 1976-

    2004-01-01

    With rapid economic growth, China attracts many multinational corporations (MNCs) as a manufacturing center with both its cheap labor cost and a huge consumer market. While doing business in China, most MNCs have faced ...

  3. 15.997 Advanced Corporate Risk Management, Spring 2007

    E-Print Network [OSTI]

    Parsons, John E.

    Opportunity for group study by graduate students on current topics related to management not otherwise included in curriculum. From the course home page: Course Description This is a course on how corporations make use of ...

  4. How to apply entrepreneurial tools to corporations, easily!

    E-Print Network [OSTI]

    Kamm, Lucia Tseng

    2015-01-01

    Corporations can benefit from leveraging commonly used emerging entrepreneurial tools such as hackathons and accelerators to achieve their innovation goals, but the answer of how to do so is not as simple as they wish. ...

  5. GEORGIA TECH RESEARCH CORPORATION BASIC RESEARCH MASTER AGREEMENT

    E-Print Network [OSTI]

    Li, Mo

    1 GEORGIA TECH RESEARCH CORPORATION BASIC RESEARCH MASTER AGREEMENT Effective Date: ________________ Basic Research Master Agreement Number: ______________ THIS BASIC RESEARCH MASTER AGREEMENT is made that authorizes performance of specific research under this Master Agreement. Task Orders shall use the sample

  6. GEORGIA TECH RESEARCH CORPORATION APPLIED RESEARCH MASTER AGREEMENT

    E-Print Network [OSTI]

    Li, Mo

    1 GEORGIA TECH RESEARCH CORPORATION APPLIED RESEARCH MASTER AGREEMENT Effective Date: ________________ Applied Research Master Agreement Number: ______________ THIS APPLIED RESEARCH MASTER AGREEMENT this Master Agreement. Task Order shall use the sample format provided in Attachment A and will include

  7. Consent Order, Mason & Hanger Corporation - EA-2000-07 | Department...

    Broader source: Energy.gov (indexed) [DOE]

    June 21, 2000 Issued to Mason & Hanger Corporation related to Fire Suppression System Issues at the Pantex Plant, (EA-2000-07) This letter refers to the Department of Energy's...

  8. INNOVATIVE CAPABILITIES, OPERATIONS PRIORITIES AND CORPORATE PERFORMANCE IN MANUFACTURING FIRMS

    E-Print Network [OSTI]

    Yanikoglu, Berrin

    , Turkey 3 Faculty of Management, Gebze Institute of Technology, Kocaeli, Turkey ABSTRACT The purposeINNOVATIVE CAPABILITIES, OPERATIONS PRIORITIES AND CORPORATE PERFORMANCE IN MANUFACTURING FIRMS Management, Kocaeli, Turkey 2 Faculty of Engineering and Natural Sciences, Sabanci University, Istanbul

  9. Buildings and corporate strategy : towards a management system model

    E-Print Network [OSTI]

    Brana, Rodrigo

    1985-01-01

    This thesis focuses on buildings as a subject of attention and inquiry in a corporate setting. It attempts to draw implications for the design of a management system to deal with the special nature of buildings as a resource. ...

  10. Information Environment and the Investment Decisions of Multinational Corporations

    E-Print Network [OSTI]

    Shroff, Nemit

    This paper examines how the external information environment in which foreign subsidiaries operate affects the investment decisions of multinational corporations (MNCs). We hypothesize and find that the investment decisions ...

  11. Preliminary Notice of Violation, Safety and Ecology Corporation...

    Broader source: Energy.gov (indexed) [DOE]

    June 14, 2005 Issued to Safety and Ecology Corporation related to a 10 CFR Part 708 Violation at the Portsmouth Gaseous Diffusion Project On June 14, 2005, the U.S. Department of...

  12. Uncertain Growth Cycles, Corporate Investment, and Dynamic Hedging

    E-Print Network [OSTI]

    Yonce, Adam

    2010-01-01

    Chowdhry. Resources, real options, and corporate strategy.not exist in standard real option models: When invest- mentIn the theory of real options, uncertainty plays a crucial

  13. Hindawi Publishing Corporation Science and Technology of Nuclear Installations

    E-Print Network [OSTI]

    Demazière, Christophe

    Hindawi Publishing Corporation Science and Technology of Nuclear Installations Volume 2013, Article Department of Nuclear Chemistry, Chalmers University of Technology, 412 96 Gothenburg, Sweden 2 Department of Nuclear Engineering, Chalmers University of Technology, 412 96 Gothenburg, Sweden Correspondence should

  14. LEE-0153- In the Matter of Martin Petroleum Corporation

    Broader source: Energy.gov [DOE]

    On August 17, 1994, Martin Petroleum Corporation (Martin) of Ft. Lauderdale, Florida, filed an Application for Exception with the Office of Hearings and Appeals of the Department of Energy. In its...

  15. High Level Waste Corporate Board Newsletter - 06/03/08

    Office of Environmental Management (EM)

    3 June 2008 UPCOMING EVENTS: Next High-Level Waste Corporate Board meeting will be held at DOE-ID on 24 July 2008. Meeting details will be presented here and e-mailed to those...

  16. High Level Waste Corporate Board Newsletter - 06/03/09

    Office of Environmental Management (EM)

    UPCOMING EVENTS: Tank Waste Corporate Board Oak Ridge National Laboratory Oak Ridge, Tennessee 28 - 29 July 2009 The Board meeting will be preceded by a tour of the Radiochemical...

  17. Security Risks and Modern Cyber Security Technologies for Corporate Networks

    E-Print Network [OSTI]

    Gharibi, Wajeb

    2011-01-01

    This article aims to highlight current trends on the market of corporate antivirus solutions. Brief overview of modern security threats that can destroy IT environment is provided as well as a typical structure and features of antivirus suits for corporate users presented on the market. The general requirements for corporate products are determined according to the last report from av-comparatives.org [1]. The detailed analysis of new features is provided based on an overview of products available on the market nowadays. At the end, an enumeration of modern trends in antivirus industry for corporate users completes this article. Finally, the main goal of this article is to stress an attention about new trends suggested by AV vendors in their solutions in order to protect customers against newest security threats.

  18. VBZ-0028- In the Matter of Sandia Corporation

    Broader source: Energy.gov [DOE]

    This decision considers a “Motion to Dismiss” filed by the Sandia Corporation (Sandia) on August 24, 1999. In its Motion, Sandia seeks judgment on the record of Complaint filed by Dr. Jiunn Yu (Yu)...

  19. Corporate budgeting In practice : driving strategic focus and performance

    E-Print Network [OSTI]

    Briggman, Chandra A. (Chandra Alisa)

    2014-01-01

    This paper identifies insights and methods used in practice to address two weaknesses in the traditional corporate budgeting process. One point of failure is the weak linkage between organizational strategy and budgeting ...

  20. Creating an incentive for investor intermediaries to improve corporate governance

    E-Print Network [OSTI]

    Gershkowitz, Todd M

    2006-01-01

    At the end of the 1980s, there was some speculation that leveraged buyouts (LBOs) would lead to the demise of the public company in favor of privately owned companies after a decade of the market for corporate control ...

  1. The Economics and Corporate Culture of Energy Conservation 

    E-Print Network [OSTI]

    Gilbert, J. S.

    1984-01-01

    five points and conservative here, you will probably find that 3, 4, or even 5 year payback items get approved. SUMMARY AND CONCLUSIONS Recognizing your manager's style and corporate pos ture as well as timing your conservation sug gestions...

  2. Board independence and corporate governance: evidence from director resignations 

    E-Print Network [OSTI]

    Gupta, Manu

    2005-08-29

    ) May 2005 Major Subject: Finance iii ABSTRACT Board Independence and Corporate Governance: Evidence from Director Resignations. (May 2005) Manu Gupta, B.E., South Gujarat University; M.I.B., Indian Institute of Foreign Trade Chair...

  3. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  4. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  5. Assessing human rights impacts in corporate development projects

    SciTech Connect (OSTI)

    Salcito, Kendyl; University of Basel, P.O. Box, CH-4003 Basel; NomoGaia, 1900 Wazee Street, Suite 303, Denver, CO 80202; NewFields, LLC, Denver, CO 80202 ; Utzinger, Jürg; University of Basel, P.O. Box, CH-4003 Basel ; Weiss, Mitchell G.; Münch, Anna K.; Singer, Burton H.; Krieger, Gary R.; Wielga, Mark; NewFields, LLC, Denver, CO 80202

    2013-09-15

    Human rights impact assessment (HRIA) is a process for systematically identifying, predicting and responding to the potential impact on human rights of a business operation, capital project, government policy or trade agreement. Traditionally, it has been conducted as a desktop exercise to predict the effects of trade agreements and government policies on individuals and communities. In line with a growing call for multinational corporations to ensure they do not violate human rights in their activities, HRIA is increasingly incorporated into the standard suite of corporate development project impact assessments. In this context, the policy world's non-structured, desk-based approaches to HRIA are insufficient. Although a number of corporations have commissioned and conducted HRIA, no broadly accepted and validated assessment tool is currently available. The lack of standardisation has complicated efforts to evaluate the effectiveness of HRIA as a risk mitigation tool, and has caused confusion in the corporate world regarding company duties. Hence, clarification is needed. The objectives of this paper are (i) to describe an HRIA methodology, (ii) to provide a rationale for its components and design, and (iii) to illustrate implementation of HRIA using the methodology in two selected corporate development projects—a uranium mine in Malawi and a tree farm in Tanzania. We found that as a prognostic tool, HRIA could examine potential positive and negative human rights impacts and provide effective recommendations for mitigation. However, longer-term monitoring revealed that recommendations were unevenly implemented, dependent on market conditions and personnel movements. This instability in the approach to human rights suggests a need for on-going monitoring and surveillance. -- Highlights: • We developed a novel methodology for corporate human rights impact assessment. • We piloted the methodology on two corporate projects—a mine and a plantation. • Human rights impact assessment exposed impacts not foreseen in ESIA. • Corporations adopted the majority of findings, but not necessarily immediately. • Methodological advancements are expected for monitoring processes.

  6. Aspects of Exxon Mobil Corporation's Acquisition of XTO Energy Inc

    Reports and Publications (EIA)

    2009-01-01

    A summary presentation to inform discussion of the recently announced acquisition of XTO Energy Inc. by Exxon Mobil Corporation, a transaction which is reportedly $41 billion in value. "Aspects of Exxon Mobil Corporation's Acquisition of XTO Energy Inc" presents non-proprietary company-level oil and gas production and reserve data and the relevant U.S. aggregate data published by the Energy Information Administration.

  7. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  8. The effect of a corporate name change related to a change in corporate image upon a firm's stock price 

    E-Print Network [OSTI]

    DeFanti, Mark P.

    2009-06-02

    This dissertation utilizes the event study methodology from the modern theory of finance to examine corporate name changes (CNCs). Data sources include press releases and articles announcing CNCs compiled by Lexis Nexis, ...

  9. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  10. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  11. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  12. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  13. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  14. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  15. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  16. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  17. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  18. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  19. U. S. forms uranium enrichment corporation

    SciTech Connect (OSTI)

    Seltzer, R.

    1993-07-12

    After almost 40 years of operation, the federal government is withdrawing from the uranium enrichment business. On July 1, the Department of Energy turned over to a new government-owned entity--the US Enrichment Corp. (USEC)--both the DOE enrichment plants at Paducah, Ky., and Portsmouth, Ohio, and domestic and international marketing of enriched uranium from them. Pushed by the inability of DOE's enrichment operations to meet foreign competition, Congress established USEC under the National Energy Policy Act of 1992, envisioning the new corporation as the first step to full privatization. With gross revenues of $1.5 billion in fiscal 1992, USEC would rank 275th on the Fortune 500 list of top US companies. USEC will lease from DOE the Paducah and Portsmouth facilities, built in the early 1950s, which use the gaseous diffusion process for uranium enrichment. USEC's stock is held by the US Treasury, to which it will pay annual dividends. Martin Marietta Energy Systems, which has operated Paducah since 1984 and Portsmouth since 1986 for DOE, will continue to operate both plants for USEC. Closing one of the two facilities will be studied, especially in light of a 40% world surplus of capacity over demand. USEC also will consider other nuclear-fuel-related ventures. USEC will produce only low-enriched uranium, not weapons-grade material. Indeed, USEC will implement a contract now being completed under which the US will purchase weapons-grade uranium from dismantled Russian nuclear weapons and convert it into low-enriched uranium for power reactor fuel.

  20. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  1. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  2. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  3. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  4. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  5. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  6. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  7. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  8. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  9. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  10. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  11. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  12. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  13. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  14. 2014 Corporate Counsel Institute Contact: Peter Skrabacz (312) 503-4213 or peter.skrabacz@law.northwestern.edu AFFILIATE PROPOSAL

    E-Print Network [OSTI]

    Ottino, Julio M.

    management, and M&A Represented companies include: Ball Corporation Baxter International Inc. Biomet, Inc Investments, Inc. MillerCoors LLC Sara Lee Corporation Sonic Corp. SP Plus Corporation Tampa Bay Lightning

  15. 2014 Corporate Counsel Institute Contact: Peter Skrabacz (312) 503-4213 or peter.skrabacz@law.northwestern.edu FIRM AFFILIATE

    E-Print Network [OSTI]

    Ottino, Julio M.

    management, and M&A Represented companies include: Ball Corporation Baxter International Inc. Biomet, Inc Investments, Inc. MillerCoors LLC Sara Lee Corporation Sonic Corp. SP Plus Corporation Tampa Bay Lightning

  16. A corporate fitness center : an example for the reuse of the Empire Stores, Brooklyn, N.Y.

    E-Print Network [OSTI]

    Georgopulos, Diane Theodora

    1982-01-01

    The proliferation of over 500 fitness programs for the employees of American corporations marks a turning point for the way American corporations regard employee and corporate health. Typically, sports facilities were the ...

  17. Development of the SEA Corporation Powergrid{trademark} photovoltaic concentrator

    SciTech Connect (OSTI)

    Kaminar, N.; Curchod, D.; Daroczi, S.; Walpert, M.; Sahagian, J.; Pepper, J. [Photovoltaics International, LLC, Sunnyvale, CA (United States)

    1998-03-01

    This report covers the three phase effort to bring the SEA Corporation`s Powergrid{trademark} from the concept stage to pilot production. The three phases of this contract covered component development, prototype module development, and pilot line production. The Powergrid is a photovoltaic concentrator that generates direct current electricity directly from sunlight using a linear Fresnel lens. Analysis has shown that the Powergrid has the potential to be very low cost in volume production. Before the start of the project, only proof of concept demonstrations of the components had been completed. During the project, SEA Corporation developed a low cost extruded Fresnel lens, a low cost receiver assembly using one sun type cells, a low cost plastic module housing, a single axis tracking system and frame structure, and pilot production equipment and techniques. In addition, an 800 kW/yr pilot production rate was demonstrated and two 40 kW systems were manufactured and installed.

  18. Recovery Act: Waste Energy Project at AK Steel Corporation Middletown

    SciTech Connect (OSTI)

    Joyce, Jeffrey

    2012-06-30

    In 2008, Air Products and Chemicals, Inc. (“Air Products”) began development of a project to beneficially utilize waste blast furnace “topgas” generated in the course of the iron-making process at AK Steel Corporation’s Middletown, Ohio works. In early 2010, Air Products was awarded DOE Assistance Agreement DE-EE002736 to further develop and build the combined-cycle power generation facility. In June 2012, Air Products and AK Steel Corporation terminated work when it was determined that the project would not be economically viable at that time nor in the foreseeable future. The project would have achieved the FOA-0000044 Statement of Project Objectives by demonstrating, at a commercial scale, the technology to capture, treat, and convert blast furnace topgas into electric power and thermal energy.

  19. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  20. On the Corporate Vote and their relation with Daisy Models

    E-Print Network [OSTI]

    Saldaña, H Hernández

    2008-01-01

    The distribution of votes of one of the corporate parties in Mexico during elections of 2000,2003 and 2006 is analyzed. After proper normalization and unfolding the agreement of the votes distributions with those of daisy models of several ranks is good. These models are generated by retaining each $r+1$ level in a sequence which follows a Poisson distribution.Beyond the fact that rank 2 daisy model resembles the distribution of the quasi-optimal distances for the Traveling Salesman Problem no clear explanation exists for this behavior,but the agreement is not fortuitous and the possibility of a universal phenomena for corporate vote is discussed.

  1. Project Reports for The Sealion Corporation- 2011 Project

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Sea Lion Corporation (SLC), an Alaska Native Claims Settlement Act village corporation, is to conduct an energy efficiency feasibility study with the goal to create jobs by providing funding to train staff to be energy raters as well as weatherization/energy conservation technicians that specialize in building construction and energy savings technologies; and to conduct a feasibility study that demonstrates a 30% reduction in residential/commercial energy usage and identify the economic benefits of implementing energy efficiency measures to the tribe.

  2. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  3. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  4. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  5. THE EFFECTIVENESS OF THE WHISTLEBLOWER PROTECTION UNDER SARBANES-OXLEY SECTION 806 IN CORPORATE GOVERNANCE

    E-Print Network [OSTI]

    Yeh, Yu-Hao

    2011-05-31

    Section 806 to prevent employees who make the disclosure from being retaliated against by companies, and to enhance the function of Section 806 to deter corporate corruption. The introduction describes how whistleblowing promotes corporate governance...

  6. EA-356-A J.P. Morgan Commodities Canada Corporation | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EA-356-A J.P. Morgan Commodities Canada Corporation EA-356-A J.P. Morgan Commodities Canada Corporation Order authorizing JPMCCC to export electric energy to Canada. EA-356-A J.P....

  7. A.O. Smith Corporation Response to Preliminary Plan for Retrospective...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    A.O. Smith Corporation Response to Preliminary Plan for Retrospective Analysis of A.O. Smith Corporation Response to Preliminary Plan for Retrospective Analysis of A.O. Smith...

  8. Changing Structure of Electric Power Industry 1999: Mergers and Other Corporate Combinations, The

    Reports and Publications (EIA)

    1999-01-01

    Presents data about corporate combinations involving investor-owned utilities in the United States, discusses corporate objectives for entering into such combinations, and assesses their cumulative effects on the structure of the electric power industry.

  9. State Participation and the Corporate Value of Natural Resource Economic Rents 

    E-Print Network [OSTI]

    Kretzschmar, Gavin Lee

    2007-01-01

    The asset participation relationship between the state and the corporate entity is an essential determinant of corporate value in the natural resource sector. Natural resources deplete, with the result that oil reserve ...

  10. How do CSR rating schemes influence corporate behavior? : lessons from the utility industry

    E-Print Network [OSTI]

    Rutledge, Elisabeth Lea

    2015-01-01

    Ninety-three percent of the world's largest 250 companies report data to voluntary corporate social responsibility (CSR) rating schemes, and over 380 CSR rating schemes exist to assess companies' corporate actions. While ...

  11. Comment submitted by CertainTeed Corporation regarding the Energy Star Verification Testing Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    This document is a comment submitted by CertainTeed Corporation regarding the Energy Star Verification Testing Program

  12. Comment submitted by A. O. Smith Corporation regarding the Energy Star Verification Testing Program

    Broader source: Energy.gov [DOE]

    This document is a comment submitted by A. O. Smith Corporation regarding the Energy Star Verification Testing Program

  13. WIYN open cluster study. LIX. Radial velocity membership of the evolved population of the old open cluster NGC 6791

    SciTech Connect (OSTI)

    Tofflemire, Benjamin M.; Gosnell, Natalie M.; Mathieu, Robert D.; Platais, Imants E-mail: imants@pha.jhu.edu

    2014-10-01

    The open cluster NGC 6791 has been the focus of much recent study due to its intriguing combination of old age and high metallicity (?8 Gyr, [Fe/H] = +0.30), as well as its location within the Kepler field. As part of the WIYN Open Cluster Study, we present precise (? = 0.38 km s{sup –1}) radial velocities for proper motion candidate members of NGC 6791 from Platais et al. Our survey, extending down to g' ? 16.8, is comprised of the evolved cluster population, including blue stragglers, giants, and horizontal branch stars. Of the 280 proper-motion-selected stars above our magnitude limit, 93% have at least one radial velocity measurement and 79% have three measurements over the course of at least 200 days, sufficient for secure radial-velocity-determined membership of non-velocity-variable stars. The Platais et al. proper motion catalog includes 12 anomalous horizontal branch candidates blueward of the red clump, of which we find only 4 to be cluster members. Three fall slightly blueward of the red clump and the fourth is consistent with being a blue straggler. The cleaned color-magnitude diagram shows a richly populated red giant branch and a blue straggler population. Half of the blue stragglers are in binaries. From our radial velocity measurement distribution, we find the cluster's radial velocity dispersion to be ? {sub c} = 0.62 ± 0.10 km s{sup –1}. This corresponds to a dynamical mass of ?4600 M {sub ?}.

  14. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  15. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  16. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  17. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  18. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  19. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  20. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  1. Does Corporate Social Responsibility Affect the Cost of Capital? * Sadok El Ghoul

    E-Print Network [OSTI]

    Saskatchewan, University of

    Does Corporate Social Responsibility Affect the Cost of Capital? * Sadok El Ghoul University the effect of corporate social responsibility (CSR) on the cost of equity capital for a large sample of U of Capital? Abstract We examine the effect of corporate social responsibility (CSR) on the cost of equity

  2. 2004 The MITRE Corporation. All rights reservedFor Internal MITRE Use Human Systems Integration

    E-Print Network [OSTI]

    Cummings, Mary "Missy"

    © 2004 The MITRE Corporation. All rights reservedFor Internal MITRE Use Human Systems Integration (781) 271-2640 lboiney@mitre.org #12;© 2004 The MITRE Corporation. All rights reserved · Objectivity Attributes #12;© 2004 The MITRE Corporation. All rights reserved MITRE partners with DOD, FAA and IRS FAA

  3. The Earth Institute I Corporate Circle The latest information, tools and networks to achieve sustainability

    E-Print Network [OSTI]

    The Earth Institute I Corporate Circle Fall 2009 The latest information, tools and networks to achieve sustainability #12;The Earth Institute I Corporate Circle STRATEGIC OPPORTUNITIES GOAL Engage and allow for flexibility in the nature and extent of engagement. The Earth Institute I Corporate Circle #12

  4. A structural analysis of vehicle design responses to Corporate Average Fuel Economy policy

    E-Print Network [OSTI]

    Michalek, Jeremy J.

    A structural analysis of vehicle design responses to Corporate Average Fuel Economy policy Ching 2009 Accepted 29 August 2009 Keywords: Corporate Average Fuel Economy Energy policy Oligopolistic market Game theory Vehicle design a b s t r a c t The US Corporate Average Fuel Economy (CAFE

  5. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  6. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  7. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  8. Hindawi Publishing Corporation International Journal of Plant Genomics

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    Hindawi Publishing Corporation International Journal of Plant Genomics Volume 2008, Article ID 412875, 7 pages doi:10.1155/2008/412875 Research Article TreeGenes: A Forest Tree Genome Database Jill L are to (1) provide a comprehensive resource for forest tree genomics data to facilitate gene discovery

  9. Fitting In: Extreme Corporate Wellness and Organizational Communication 

    E-Print Network [OSTI]

    James, Eric Preston

    2014-07-31

    program known as CrossFit. I argue that a discourse of extreme corporate wellness furthers a social-Darwinian viewpoint of “survival of the fittest” not only in the workplace, but also in an employee’s personal and home life. This study combined...

  10. Welcome to the Car Rental Dashboard Corporate Discount #

    E-Print Network [OSTI]

    Welcome to the Car Rental Dashboard Corporate Discount # The information contained in this document and Enterprise National Car rental and Enterprise rent-a-Car: Your Business Is Our Business. Welcome to the Car Rental Dashboard, where you can find all the details you need regarding your company's car rental program

  11. UAV Development and History at Northrop Grumman Corporation

    E-Print Network [OSTI]

    UAV Development and History at Northrop Grumman Corporation Ryan Aeronautical Center Norman S. Sakamoto norm.sakamoto@ngc.com 619.203.5726 File Name.1 As of (date) SI4000 SUMMER 2004 UAV Brief #12;File Name.2 As of (date) UAV Family Tree Historically, no single, universally accepted definition has

  12. Corporate Social Responsibility How Global Business is Getting

    E-Print Network [OSTI]

    ­ sustainability, labor and human rights, governance (corruption and transparency) and community engagement.AtameetinginthemarginsoftheUNClimate Change negotiations in Cancun, Mexico in December 2010, a number these businesses, including Unilever countries. Improved governance means greater transparency and less corruption to western corporations

  13. Rutgers Business School Professor Simi Kedia Corporate Finance

    E-Print Network [OSTI]

    . 3. Final: 50%. 1. Capital Structure ***Franco Modigliani and Merton Miller, 1958, The cost of capital, corporation finance and the theory of investment, American Economic Review. ***S. Myers and N not have, Journal of Financial Economics, 13, 187-221 ***S. Myers, The capital structure puzzle, Journal

  14. Rutgers Business School Professor Simi Kedia Corporate Finance

    E-Print Network [OSTI]

    . Capital Structure ***Franco Modigliani and Merton Miller, 1958, The cost of capital, corporation finance (30% of grade): This will be in class written exam. #12;Students should have reviewed Capital., Meckling, 1976, Theory of the Firm, Managerial Behavior, Agency Costs and Ownerhsip Structure, Journal

  15. Chinese Home Appliance Manufacturing: A Case Study of TCL Corporation

    E-Print Network [OSTI]

    Brock, David

    Chinese Home Appliance Manufacturing: A Case Study of TCL Corporation Ping Wang The Ohio State of the Chinese economy. In general, it is hard to correlate the contribution of effective logistics systems the year 2020. Complicating matters, Chinese statistics show that for 2000 nearly 14.6 billion passengers

  16. IBM Haifa Research Lab 2010 IBM Corporation Query Performance Prediction

    E-Print Network [OSTI]

    Kurland, Oren

    IBM Haifa Research Lab © 2010 IBM Corporation Query Performance Prediction for IR David Carmel, IBM Haifa Research Lab Oren Kurland, Technion SIGIR Tutorial Portland Oregon, August 12, 2012 IBM Labs. David Carmel Research Staff Member at the Information Retrieval group at IBM Haifa Research Lab Ph

  17. Hindawi Publishing Corporation Advances in High Energy Physics

    E-Print Network [OSTI]

    Mcdonough, William F.

    Hindawi Publishing Corporation Advances in High Energy Physics Volume 2012, Article ID 235686, 34 under the Creative Commons Attribution License, which permits unrestricted use, distribution . The initial hot state 4.5 billion years ago was a result of gravitational energy of accretion and global

  18. Hindawi Publishing Corporation EURASIP Journal on Advances in Signal Processing

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    and Mohammad B. Shamsollahi1 1 Biomedical Signal and Image Processing Laboratory (BiSIPL), School of ElectricalHindawi Publishing Corporation EURASIP Journal on Advances in Signal Processing Volume 2007 pregnancies. The applicability of the model for the evaluation of signal processing algorithms is illustrated

  19. Hindawi Publishing Corporation International Journal of Biomedical Imaging

    E-Print Network [OSTI]

    Wang, Ge

    Hindawi Publishing Corporation International Journal of Biomedical Imaging Volume 2007, Article ID Yu and Ge Wang Biomedical Imaging Division, VT-WFU School of Biomedical Engineering and Science of Biomedical Imaging, vol. 2006, Article ID 10427, 9 pages, 2006. [2] H. Yu, Y. Wei, Y. Ye, and G. Wang

  20. Hindawi Publishing Corporation International Journal of Biomedical Imaging

    E-Print Network [OSTI]

    Wang, Ge

    Hindawi Publishing Corporation International Journal of Biomedical Imaging Volume 2008, Article ID of Biomedical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China 2 Biomedical Imaging Division, VT-WFU School of Biomedical Engineering and Sciences, Blacksburg, VA 24061, USA Correspondence should

  1. Hindawi Publishing Corporation International Journal of Biomedical Imaging

    E-Print Network [OSTI]

    Wang, Ge

    Hindawi Publishing Corporation International Journal of Biomedical Imaging Volume 2006, Article ID that have brought biomedical imaging to a paramount sta- tus in the life sciences. As a prominent example, the Na- tional Institute for Biomedical Imaging and Bioengineer- ing (NIBIB) was established in 2000

  2. GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT

    E-Print Network [OSTI]

    GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT Project No Members"). Section 2. Payment; Fixed Price Amount. 2.1 COMPANY agrees to pay GTRC $______ ("Fixed Price%) of the Fixed Price Amount to GTRC upon signing this Agreement. The advance payment will be applied against

  3. Hindawi Publishing Corporation EURASIP Journal on Applied Signal Processing

    E-Print Network [OSTI]

    Xie, Yao

    Hindawi Publishing Corporation EURASIP Journal on Applied Signal Processing Volume 2006, Article ID of Information Technology, Systems and Control Division, Uppsala University, P. O. Box 337, 75105 Uppsala, Sweden imaging (MRI) and Positron emission tomography (PET) have led to an increase in the identification

  4. Hindawi Publishing Corporation International Journal of Rotating Machinery

    E-Print Network [OSTI]

    Mahesh, Krishnan

    Hindawi Publishing Corporation International Journal of Rotating Machinery Volume 2012, Article ID, and reproduction in any medium, provided the original work is properly cited. Propulsor crashback is an off-design)-propulsor rotational speed () plane as shown in Figure 1(a). The design operating condition is forward (U > 0, > 0

  5. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  6. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  7. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  8. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  9. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  10. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  11. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  12. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  13. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  14. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  15. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  16. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  17. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  18. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  19. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  20. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  1. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  2. Clean Kinematic Samples in Dwarf Spheroidals: An Algorithm for Evaluating Membership and Estimating Distribution Parameters When Contamination is Present

    E-Print Network [OSTI]

    Matthew G. Walker; Mario Mateo; Edward W. Olszewski; Bodhisattva Sen; Michael Woodroofe

    2008-11-12

    (abridged) We develop an algorithm for estimating parameters of a distribution sampled with contamination, employing a statistical technique known as ``expectation maximization'' (EM). Given models for both member and contaminant populations, the EM algorithm iteratively evaluates the membership probability of each discrete data point, then uses those probabilities to update parameter estimates for member and contaminant distributions. The EM approach has wide applicability to the analysis of astronomical data. Here we tailor an EM algorithm to operate on spectroscopic samples obtained with the Michigan-MIKE Fiber System (MMFS) as part of our Magellan survey of stellar radial velocities in nearby dwarf spheroidal (dSph) galaxies. These samples are presented in a companion paper and contain discrete measurements of line-of-sight velocity, projected position, and Mg index for ~1000 - 2500 stars per dSph, including some fraction of contamination by foreground Milky Way stars. The EM algorithm quantifies both dSph and contaminant distributions, returning maximum-likelihood estimates of the means and variances, as well as the probability that each star is a dSph member. Applied to our MMFS data, the EM algorithm identifies more than 5000 probable dSph members. We test the performance of the EM algorithm on simulated data sets that represent a range of sample size, level of contamination, and amount of overlap between dSph and contaminant velocity distributions. The simulations establish that for samples ranging from large (N ~3000) to small (N~30), the EM algorithm distinguishes members from contaminants and returns accurate parameter estimates much more reliably than conventional methods of contaminant removal (e.g., sigma clipping).

  3. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  4. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  5. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  6. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  7. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  8. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  9. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  10. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing, E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Chen, Weixi [State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ding, Ying, E-mail: Ying.Ding@glasgow.ac.uk [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  11. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  12. Electrical degradation mechanisms of RF power GaAs PHEMTs

    E-Print Network [OSTI]

    Villanueva, Anita A. (Anita Ariel), 1978-

    2007-01-01

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability ...

  13. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  14. Disclosure of asset valuations in corporate annual reports 

    E-Print Network [OSTI]

    Ponder, Charles Bedford

    1955-01-01

    DISCLOSURE OF ASSET VALUATIONS IN CORPORATE ANNUAL REPORTS A Thesis Charles 3. Ponder Approved as to style and content by: Head of Department and Chairman of Committee January 1955 Ll!3RARY A A M COLLEGE OF TEXAS DISCLOSURE OF ASSET... January 1955 Ma)or Subject: Accounting DISCXDSEm OP A88ET VAWATIONS IN COllPQRATE ANNSAI REPORTS IXI Nature of the Probles Xmnmtories Marbetable Seoarities Xavestseuts PAGE 15 V PixeA Assets VII Iataugible Assets Concise isa Bibliograyhy...

  15. Preliminary Notice of Violation, Sandia Corporation | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy Bills andOrderNATIONAL CHAIRS MEETINGof EnergyCorporation Preliminary

  16. Primus Power Corporation Wind Firming EnergyFarm

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergyInterested PartiesBuildingBudget | Department Primus Power Corporation Wind Firming

  17. QA Corporate Board Meeting - February 2011 | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergyInterested PartiesBuildingBudget || DepartmentPutting Solar Panels to the1 QA Corporate

  18. QA Corporate Board Meeting - March 2008 | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergyInterested PartiesBuildingBudget || DepartmentPutting Solar Panels to the18 QA Corporate

  19. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  20. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  1. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  2. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    SciTech Connect (OSTI)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to ?190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from ?20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  3. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  4. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01

    assuming the material growth technology allows for all ofand a relatively immature growth technology, as well as theof the art for InGaN growth technology. Epitaxial growth of

  5. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Sztein, Alexander, E-mail: asztein@umail.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9?W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  6. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors 

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31

    production is projected to consume ~100,000 wafers per year by 2015 (Yole Development, “Power GaN – 2012 Edition”), this manufacturing breakthrough represents potential savings of ~$17 million per year....

  7. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  8. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigör, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  9. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  10. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  11. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  12. Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

    E-Print Network [OSTI]

    Jalali. Bahram

    Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

  13. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high-power Traveling Wave Power Amplifier circuit (TWPA)[1][2] for realization of wideband power amplifiersWE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J

  14. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  15. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a

    E-Print Network [OSTI]

    Haller, Gary L.

    . INTRODUCTION Triple-junction metamorphic solar cells have reached ef- ficiencies as high as 41.1% by combiningMetamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a S. Tomasulo,1 P-yP solar cells. Tensile-strained GaAsxP1-x buffers grown on GaAs using unoptimized conditions

  16. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS RobynAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising

  17. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  18. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  19. Edinburgh Research Explorer Corporate coalitions and policy making in the European Union

    E-Print Network [OSTI]

    Vijayakumar, Sethu

    `Better Regulation' Short title: Corporate Coalitions and `Better Regulation' Authors: Smith, Katherine E. Corresponding author: Smith, Katherine E. Address: Global Public Health Unit, Social Policy, School of Social

  20. This work was sponsored by Intel Corporation through the Colorado Power Electronics Center.

    E-Print Network [OSTI]

    This work was sponsored by Intel Corporation through the Colorado Power Electronics Center Process Tony Carosa, Regan Zane and Dragan Maksimovic Colorado Power Electronics Center Department

  1. Chrome Deposit Corporation and the University of Delaware IAC: Another Energy Efficiency Success Story

    Broader source: Energy.gov [DOE]

    Following an Energy Savings Assessment conducted by the University of Delaware's Industrial Assessment Center, Chrome Deposit Corporation's Newark, DE plant is seeing significant energy savings.

  2. Ohio Valley Gas Corporation- Residential and Small Commercial Natural Gas Incentive Program

    Broader source: Energy.gov [DOE]

    Ohio Valley Gas Corporation (OVG) offers rebates to its residential and small commercial customers for the purchase of energy efficient equipment and appliances. The program's rebate offering...

  3. Refining and Extending the Business Model with Information Technology: Dell Computer Corporation

    E-Print Network [OSTI]

    Kraemer, Kenneth L; Dedrick, Jason; Yamashiro, Sandra

    1999-01-01

    SAP implementation was dubbed the Genesis Project, and involved a 140 member staff pulled together from corporate and regional information systems

  4. High-Level Waste Corporate Board, Dr. In??s Triay

    Office of Environmental Management (EM)

    Office of Environmental Management High-Level Waste Corporate Board April 1, 2008 safety v performance v cleanup v closure M E Environmental Management Environmental Management...

  5. Energy Productivity is the Best Medicine Medicine: Corporate Energy Management at Merck & Co., Inc.

    SciTech Connect (OSTI)

    2010-06-25

    Alliance to Save Energy case study on corporate energy management at Merck & Co., Inc. sponsored by the U.S. Department of Energy Industrial Technologies Program.

  6. MeMbership P

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Board and Director. At this level of participation, you will be required to sign CMI's Master Non-disclosure Agreement and the Intellectual Property Management Plan (IPMP)....

  7. Current Membership 3MCompany

    E-Print Network [OSTI]

    in 2011 to accelerate the development and deployment of new, lower cost carbon fiber composite materials new, lower cost fibers and more efficient compositing techniques will enable the market to grow evenInternational · Hills,Inc. · InnovationValleyInc. · Innventia · INOACUSA · LignolInnovations · Materials

  8. Membership Contact Us

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    in the Media· Blog Categories Cleantech Economic News Electric Energy EPA Green Economy Cyber Security LED

  9. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  10. Metal contacts on ZnSe and GaN

    SciTech Connect (OSTI)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  11. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

    SciTech Connect (OSTI)

    Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07

    The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

  12. Levan Town Corporation (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona: EnergyLebanonTexas: Energy ResourcesLetcherLevan Town Corporation

  13. Intellon Corporation Smart Grid Project | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy ResourcesOrder at 8, 13 (Vt.InfinifuelInovaEnergyCorporation Smart Grid

  14. Property:NumberOfNonCorporateOrganizations | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo,AltFuelVehicle2 Jump to:NumberOfNonCorporateOrganizations Jump to: navigation, search This

  15. EA-145-B Powerex Corporation | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy A plug-in electricLaboratoryofNotices |Dynegy Power Marketing,Powerex Corporation to

  16. EA-145-C Powerex Corporation | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy A plug-in electricLaboratoryofNotices |Dynegy Power Marketing,Powerex Corporation

  17. National Thermal Power Corporation NTPC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavyAgency (IRENA) JumpLiteratureMengdongDNRThermal Power Corporation

  18. Nongqishi Electric Power Industrial Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg, Oregon: EnergyNongqishi Electric Power Industrial Corporation

  19. Fillmore City Corporation (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:ofEnia SpA JumpGmbHFerrisFillmore City Corporation (Utility

  20. Gujarat State Electricity Corporation Ltd GSECL | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA JumpDuimen River Power Co Ltd JumpGuanhYuefengEnergyCorporation Ltd