Sample records for membership corporation ga

  1. Gibson Electric Membership Corporation- Energy Efficiency Rebates

    Broader source: Energy.gov [DOE]

    Gibson Electric Membership Corporation, in collaboration with the Tennessee Valley Authority, promotes energy efficient building design through its [http://www.energyright.com/ ''energy right'']...

  2. Alternative Energy Projects by Rural Electric Membership Corporations (Indiana)

    Broader source: Energy.gov [DOE]

    This legislation encourages the development of alternative energy projects using clean or renewable resources by rural electric membership corporations. The section establishes the Office of...

  3. Central Electric Membership Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, click here.Telluric Survey asWest, NewCenterville, Ohio: EnergyMembership

  4. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  5. Gibson Electric Membership Corporation- Residential Energy Efficient Water Heater Loan Program

    Broader source: Energy.gov [DOE]

    Gibson Electric Membership Corporation provides loans to its residential customers to finance new, energy efficient water heaters. The loans are interest-free and can be paid off in as many as 3...

  6. BJ's Wholesale Club Welcomes you! Thank you for participating in our Corporate Membership program by renewing or

    E-Print Network [OSTI]

    Reuter, Martin

    BJ's Wholesale Club Welcomes you! Thank you for participating in our Corporate Membership program by renewing or purchasing your BJ's Wholesale Club Membership. BJ's is unlike any shopping club you have ever of the negatives that wholesale shoppers have become all too familiar with. BJ's Application Form Read over

  7. Membership Criteria: Better Buildings Residential Network | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Membership Criteria: Better Buildings Residential Network Membership Criteria: Better Buildings Residential Network Membership Criteria: Better Buildings Residential Network...

  8. Free membership Agriculture Alzheimer Astronomy

    E-Print Network [OSTI]

    Lovley, Derek

    Membership Free membership signup! Categories Agriculture Alzheimer Astronomy Astrophysics Bacteria that was released to the environment as a result of ore milling, nuclear fuel fabrication or processing activities

  9. Sawnee Electric Membership Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to:RoscommonSBYSaltonSprings,Sardinia,Sawasdee Sabaidee JumpSawnee

  10. Sawnee Electric Membership Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f < RAPID‎ |Rippey JumpAir Jump to: navigation, search Name: SaveSawnee

  11. Hypertrapezoidal fuzzy membership functions

    E-Print Network [OSTI]

    Painter, John H.; Kelly, W. E. III

    1996-09-08T23:59:59.000Z

    version of fuzzy logic which requires that set membership sum to one. The fuzzy partitioning which stems from the presented method is parameterized by M+1 values, yielding an efficient mechanism for designing complex fuzzy systems....

  12. Electricity Advisory Committee (EAC) 2013 Membership Roster:...

    Energy Savers [EERE]

    3 Membership Roster: December 15, 2013 Electricity Advisory Committee (EAC) 2013 Membership Roster: December 15, 2013 2013 Membership roster for the Electricity Advisory Committee...

  13. Better Buildings Residential Network Membership Form | Department...

    Energy Savers [EERE]

    Membership Form Better Buildings Residential Network Membership Form Membership form from the U.S. Department of Energy's Better Buildings Residential Network Recommended...

  14. Hypertrapezoidal fuzzy membership functions

    E-Print Network [OSTI]

    Painter, John H.; Kelly, W. E. III

    1996-09-08T23:59:59.000Z

    , the use of one-dimensional membership yi??? Figure 1. Typical 1 D membership functions. 0-7803-3645-3196 $5 .OOO 1996 IEEE functions has proved to be inadequate in practical situations involving comlplex systems. In particular, previous work... University. Downloaded on February 16,2010 at 15:03:24 EST from IEEE Xplore. Restrictions apply. : "Correlated" model - Two variable composition 8 (i.e. IF Si and Sj, THEN ...) rint sf fuzzy set w For systems with correlation between two variables, x...

  15. Electricity Advisory Committee (EAC) 2014 Membership Roster:...

    Energy Savers [EERE]

    December 4, 2014 Electricity Advisory Committee (EAC) 2014 Membership Roster: December 4, 2014 2014 Membership roster for the Electricity Advisory Committee as of December 4,...

  16. Electricity Advisory Committee (EAC) 2014 Membership Roster:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    June 10, 2014 Electricity Advisory Committee (EAC) 2014 Membership Roster: June 10, 2014 2014 Membership roster for the Electricity Advisory Committee as of June 10, 2014. 2014...

  17. Blue Ridge Mountain Electric Membership Corporation- Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Blue Ridge Mountain EMC and TVA, its power supplier, offer the Energy Rightand TVA E-Score rebates to qualified members. To qualify for water heater rebates provided by the Energy Right program, a...

  18. Blue Ridge Mountain Electric Membership Corporation- Water Heater Rebate Program

    Broader source: Energy.gov [DOE]

    Blue Ridge Mountain EMC and TVA, its power supplier, offer the Energy Right and In Home Energy Evaluation programs to qualified members. To qualify for water heater rebates provided by the Energy...

  19. Tri State Electric Membership Corporation Smart Grid Project | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlin Baxin Hydropower StationTown ofTownNote-BangladeshTri

  20. Cobb Electric Membership Corporation Smart Grid Project | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew York: Energy ResourcesCoastalCobb Electric

  1. Better Buildings Residential Network Membership Form

    Energy Savers [EERE]

    Membership Form BETTER BUILDINGS RESIDENTIAL NETWORK Type of Organization (Check all that apply) ConsultantAdvisor Manufacturer ContractorTrade ally Nonprofit organization...

  2. Membership

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighand Retrievals from aRod Eggert ImageMeetings MembersMembers

  3. Electricity Advisory Committee (EAC) 2012-2013 Membership Roster...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    December 20, 2012 Electricity Advisory Committee (EAC) 2012-2013 Membership Roster: December 20, 2012 2012-2013 Membership roster for the Electricity Advisory Committee as of...

  4. The Department of Energy Announces New Membership for the Electricity...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    New Membership for the Electricity Advisory Committee The Department of Energy Announces New Membership for the Electricity Advisory Committee September 23, 2010 - 3:13pm Addthis...

  5. DTC DATA MINING CONSORTIUM MEMBERSHIP BENEFITS

    E-Print Network [OSTI]

    Minnesota, University of

    DTC DATA MINING CONSORTIUM MEMBERSHIP BENEFITS I Collaboration with leading companies I BEHAVIORAL ECOLOGY DRUG DISCOVERY BUSINESS SALES & MARKETING AUTOMOTIVE CRM GOVERNMENT CYBER SECURITY Creation Analysis Optimization Scalable Database Mining Auto-Mining Agents CUTTING-EDGE CAPABILITIES

  6. Hoisting and Rigging Technical Advisory Committee Membership...

    Broader source: Energy.gov (indexed) [DOE]

    Advisory Committee Membership Roster NAME ORGANIZATION E-MAIL PHONE Abramson, Doug DOE, NNSA, NA-3.6 doug.abramson@hq.doe.gov (301) 903-7328 Aponte, Xavier NNSA, Nevada Site Office...

  7. Business Membership Program Institute for Ethical Leadership

    E-Print Network [OSTI]

    Lin, Xiaodong

    Business Membership Program Institute for Ethical Leadership at Rutgers Business School business businesses are being scrutinized from every angle. The Institute for Ethical Leadership at Rutgers Business identification, leadership development, ethical leadership, decision-making skills, business best practices

  8. Corporate Affiliate Event Details

    E-Print Network [OSTI]

    Shahriar, Selim

    Corporation Tampa Bay Lightning Tenneco Inc. TreeHouse Foods, Inc. Attendee Profile 2013 Corporate Counsel

  9. Leadership & Service through an AIAS Chapter MembershipAIAS Chapter Membership

    E-Print Network [OSTI]

    Maxwell, Bruce D.

    Leadership & Service through an AIAS Chapter MembershipAIAS Chapter Membership Participating in a l d h d Participating in a l d h d Administrative timeAdministrative time leadership and service related AIAS event leadership and service related AIAS event A lecture Administrative time spent

  10. Sandia Corporation

    Office of Environmental Management (EM)

    Corporation Sandia National Laboratories P.O. Box 5800, MS 0101 Albuquerque, New Mexico 87185-0101 WEL-2012-01 Dear Dr. Hommert: The Office of Health, Safety and Security's...

  11. Electricity Advisory Committee (EAC) 2014-2015 Membership Roster...

    Broader source: Energy.gov (indexed) [DOE]

    4-2015 Membership roster for the Electricity Advisory Committee as of September 9, 2014. EAC 2014-2015 Membership Roster as of September 9. 2014 More Documents & Publications...

  12. Electricity Advisory Committee (EAC) 2012-2013 Membership Roster...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    August 3, 2012 Electricity Advisory Committee (EAC) 2012-2013 Membership Roster: August 3, 2012 2012-2013 Membership roster for the Electricity Advisory Committee as of August 3,...

  13. Corporate Governance and Taxation

    E-Print Network [OSTI]

    Dyck, Alexander

    2004-01-01T23:59:59.000Z

    Accounting and Corporate Governance, Journal of Accounting1997) A Survey of Corporate Governance Journal of FinanceCorporate Governance and Taxation Mihir A. Desai* Harvard

  14. Supporting Non-membership Proofs with Bilinear-map Accumulators

    E-Print Network [OSTI]

    Supporting Non-membership Proofs with Bilinear-map Accumulators Ivan Damg°ard Nikos Triandopoulos an extension of Nguyen's bilinear-map based accumulator scheme [8] to support non-membership witnesses and corresponding non-membership proofs, i.e., cryptographic proofs that an element has not been accumulated

  15. Retirement Benefits Scheme Benefiting from membership

    E-Print Network [OSTI]

    Mumby, Peter J.

    7 Temporary absence 8 Part-time employment 8 Normal retirement 8 Late retirement 9 Early retirementRetirement Benefits Scheme Benefiting from membership: Your guide to the Scheme www 9 Incapacity retirement 10 Cash sum options 10 Pension increases 10 Paymeny of pension 10 Leaving

  16. GA Tech Campus Emergency Response Team STANDARD OPERATING PROCEDURE

    E-Print Network [OSTI]

    GA Tech Campus Emergency Response Team GT-CERT STANDARD OPERATING PROCEDURE 09/29/2010 #12;2 Table as a condition for the appointment and continuing maintenance of membership. GT-CERT members operate for and to respond to emergency/disaster situations. 2.0 Purpose To establish procedures for the activation

  17. Law and Corporate Governance

    E-Print Network [OSTI]

    Fligstein, Neil; Choo, Jennifer

    2005-01-01T23:59:59.000Z

    1997. A survey of corporate governance. J. Finan. 52(2):737-1999. Employees and Corporate Governance. Washington, DC:structural change in corporate governance. J. Law Soc. 27(

  18. Membership Information | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA groupTubahq.na.govSecurityMaintaining the StockpileNational NuclearMembership

  19. Cobb Electric Membership Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew York: Energy ResourcesCoastalCobb Electric Membership

  20. Colquitt Electric Membership Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew York:Governor s EnergyColquitt Electric Membership Corp

  1. Division of Human Resources Retirement Renewed Membership & Reemployment Restrictions

    E-Print Network [OSTI]

    Meyers, Steven D.

    Division of Human Resources Retirement Renewed Membership & Reemployment Restrictions Questions employer after you have been retired for 12 calendar months. #12;Division of Human Resources Retirement Renewed Membership & Reemployment Restrictions Questions (813) 974-2970 Rev. 02/2012 If you are reemployed

  2. Oklahoma 4-H Alumni Association Membership Form Name Maiden Name

    E-Print Network [OSTI]

    Balasundaram, Balabhaskar "Baski"

    Oklahoma 4-H Alumni Association Membership Form Name Maiden Name Home County County Residing Awards/Trips Your membership in the Oklahoma 4-H Alumni Association is an investment in the future of Oklahoma 4-H. Half of your dues will be invested in maintaining the 4-H Alumni Association and the 4-H

  3. BEAN IMPROVEMENT COOPERATIVE 2014 BIC Invoice (US $) and Membership Information

    E-Print Network [OSTI]

    BEAN IMPROVEMENT COOPERATIVE 2014 BIC Invoice (US $) and Membership Information 2014 Dues (Volume ISSN # = 0084-7747] INVOICE 2014 BEAN IMPROVEMENT COOPERATIVE MEMBERSHIP If paying by check, please make payable to the "BEAN IMPROVEMENT COOPERATIVE", and mail to: Dr. Phillip N. Miklas, USDA-ARS, 24106

  4. IP Profiling via Service Cluster Membership Vectors

    SciTech Connect (OSTI)

    Bartoletti, A

    2009-02-23T23:59:59.000Z

    This study investigates the feasibility of establishing and maintaining a system of compact IP behavioral profiles as a robust means of computer anomaly definition and detection. These profiles are based upon the degree to which a system's (IP's) network traffic is distributed among stable characteristic clusters derived of the aggregate session traffic generated by each of the major network services. In short, an IP's profile represents its degree of membership in these derived service clusters. The goal is to quantify and rank behaviors that are outside of the statistical norm for the services in question, or present significant deviation from profile for individual client IPs. Herein, we establish stable clusters for accessible features of common session traffic, migrate these clusters over time, define IP behavior profiles with respect to these clusters, migrate individual IP profiles over time, and demonstrate the detection of IP behavioral changes in terms of deviation from profile.

  5. THE CONTENT OF CORPORATE FEDERALISM

    E-Print Network [OSTI]

    Bratton, William W.

    2004-01-01T23:59:59.000Z

    Federalism in Corporate Governance: Protecting ShareholderCollaborative Corporate Governance: Listing Standards, Stateof Care Stadanrd in Corporate Governance 75 Iowa L. Rev. 1,

  6. INDUSTRY LIAISON PROGRAM MEMBERSHIP AGREEMENT This MEMBERSHIP AGREEMENT (hereinafter the "Agreement") with the Center for Advanced

    E-Print Network [OSTI]

    Gilchrist, James F.

    approaches and results, ongoing CAMN research, and future research plans. 2) Access to contacts the "Effective Date"), is by and between ___________________________________________ [COMPANY NAME], a _________________________________________________[indicate state of formation and company structure (corporation/ limited liability company/ partnership

  7. DOE Announces Membership of New Electricity Advisory Committee...

    Broader source: Energy.gov (indexed) [DOE]

    will serve one or two year terms and include some of the nation's top public and private sector leaders in electricity policy, planning and operations. DOE Announces Membership of...

  8. Distributed multicast tree generation with dynamic group membership Frank Adelsteina

    E-Print Network [OSTI]

    Richard III, Golden G.

    Distributed multicast tree generation with dynamic group membership Frank Adelsteina , Golden G. Another distinguishing character- istic for tree generation algorithms is centralized versus distributed, efficient network utilization becomes a growing concern. Multicast transmission may use network bandwidth

  9. Our Corporate Residents...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the quality and variety of the Corporate Residents who call ETTP home. From young start-ups to Fortune 500 corporations, Heritage Center's resources and assets are being fully...

  10. Essays on corporate bonds

    E-Print Network [OSTI]

    Bao, Jack (Jack C.)

    2009-01-01T23:59:59.000Z

    This thesis consists of three empirical essays on corporate bonds, examining the role of both credit risk and liquidity. In the first chapter, I test the ability of structural models of default to price corporate bonds in ...

  11. Corporate sustainability assessment methodology

    E-Print Network [OSTI]

    Pinchuk, Natallia

    2011-01-01T23:59:59.000Z

    Sustainability is a vague concept specifically in the context of a corporate world. There are numerous definitions for corporate sustainability and just as many ways of evaluating it. This work attempts to define, structure ...

  12. Yubing Wang EMC Corporation

    E-Print Network [OSTI]

    Claypool, Mark

    Yubing Wang EMC Corporation Hopkinton, MA 01748, USA wang_yubing@emc.com Mark Claypool Computer@cs.wpi.edu Zheng Zuo EMC Corporation Hopkinton, MA 01748, USA zuo_zheng@emc.com Abstract--The tremendous increase

  13. Indianapolis Public Transportation Corporation

    SciTech Connect (OSTI)

    Not Available

    2004-12-01T23:59:59.000Z

    Fact sheet describes the National Renewable Energy Laboratory's evaluation of Indianapolis Public Transportation Corporation's (IndyGo's) hybrid electric buses.

  14. CORPORATIONS APAC Tennessee Incorporated

    E-Print Network [OSTI]

    Dasgupta, Dipankar

    Business Resources Breast Cancer Eradication Initiative Incorporated Brother International Corporation Resources Incorporated ETI Corporation Corporate and Foundation Giving The University of Memphis is grateful Family of Companies KPMG Peat Marwick LLP Knox Music Incorporated Frank Ricks/Looney Ricks Kiss Lane

  15. Automotive Fuel Cell Corporation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Automotive Fuel Cell Corporation n SNL researcher Cy Fujimoto demonstrates his new flexible hydrocarbon polymer electrolyte mem- brane, which could be a key factor in realizing a...

  16. Census: Location-Aware Membership Management for Large-Scale Distributed Systems

    E-Print Network [OSTI]

    Cowling, James Alexander

    We present Census, a platform for building large-scale distributed applications. Census provides a membership service and a multicast mechanism. The membership service provides every node with a consistent view of the ...

  17. Corporate Headquarters 317 Route 104

    E-Print Network [OSTI]

    Firestone, Jeremy

    Sustainable Energy Developments, Inc. is a New York Corporation Founded April 2002 Visualization Phone: (978) 422 7744 Sustainable Energy Developments, Inc. is a New York Corporation Founded Energy Developments, Inc. is a New York Corporation Founded April 2002

  18. Corporate and Business Plan

    E-Print Network [OSTI]

    Corporate and Business Plan 2010-2011 #12;Main addresses Forest Research Alice Holt Lodge Farnham Research's Business Plan 2010-2011 ..........................12 Table Contents Table 1 - Income This Corporate and Business Plan sets out FR's aims and strategic objectives. It describes the Key Performance

  19. Corporate Information & Computing Services

    E-Print Network [OSTI]

    Martin, Stephen John

    Corporate Information & Computing Services High Performance Computing Report March 2008 Author The University of Sheffield's High Performance Computing (HPC) facility is provided by CiCS. It consists of both Graduate Students and Staff. #12;Corporate Information & Computing Services High Performance Computing

  20. Finance Committee Terms of Reference, Membership and Operating Procedures

    E-Print Network [OSTI]

    Botea, Adi

    95/2012 Finance Committee Terms of Reference, Membership and Operating Procedures Principles 1 on, or pose any reasonable risk to, the University's finances and operations" section 18(4)(d). 3. Council has established a Finance Committee as a committee of Council. 4. The broad purpose of the Finance

  1. Risk Management Steering Committee Membership 2014/15

    E-Print Network [OSTI]

    Victoria, University of

    Risk Management Steering Committee Membership 2014/15 NAME TITLE / DEPARTMENT Gayle Gorrill (Chair, Facilities Management Kane Kilbey Associate Vice-President, Human Resources and EOC Coordinator Kristi Emergency Planner Andrew Coward Assistant Treasurer Ben McAllister Risk and Insurance Analyst Adrian Round

  2. Smith & Franklin Academic Publishing Corporation

    E-Print Network [OSTI]

    Tong, Liang

    Smith & Franklin Academic Publishing Corporation www.smithandfranklin.com Science, Religion | Pages 23 Smith & Franklin Academic Publishing Corporation www.smithandfranklin.com ic origin, meant

  3. ISSUANCE 2015-06-08: Solicitation of Nominations for Membership on the Appliance Standards and Rulemaking Federal Advisory Committee

    Broader source: Energy.gov [DOE]

    Solicitation of Nominations for Membership on the Appliance Standards and Rulemaking Federal Advisory Committee

  4. Rutgers Business School Corporate Finance

    E-Print Network [OSTI]

    Lin, Xiaodong

    Rutgers Business School Corporate Finance Fall 2014 Instructor: Vikram Nanda Office: 5186 to the basic and current research questions and methods theoretical and empirical in corporate finance areas in corporate finance. Among these: Tirole, Corporate Finance Finance Handbooks such as: Jarrow

  5. Corporate Energy Management Process

    E-Print Network [OSTI]

    Geiger, T.

    2013-01-01T23:59:59.000Z

    . May 21-24, 2013 Corporate Energy Management Process 2 ?Brief introduction to BASF ? BASF Corporate Energy Management ? Management Support ? Goals ? Continuous Improvement ? Best Practices ? Recognition ?Summary ESL-IE-13-05-25 Proceedings...-value products ? Intelligent, sustainable system solutions ? 2012 Sales: ?72.1 Billion ? Employees: 110,000 Company overview BASF ? The Chemical Company ESL-IE-13-05-25 Proceedings of the Thrity-Fifth Industrial Energy Technology Conference New Orleans, LA...

  6. Membership Probability via Control Field Colour-Magnitude Decontamination

    E-Print Network [OSTI]

    Corradi, Wagner J B; Santos, Joao F C

    2009-01-01T23:59:59.000Z

    The open clusters fundamental physical parameters are important tools to understand the formation and evolution of the Galactic disk and as grounding tests for star formation and evolution models. However only a small fraction of the known open clusters in the Milky Way has precise determination of distance, reddening, age, metallicity, radial velocity and proper motion. One of the major problems in determining these parameters lies on the difficulty to separate cluster members from field stars and to assign membership. We propose a decontamination method by employing 2MASS data in the encircling region of the clusters NGC1981, NGC2516, NGC6494 and M11. We present a decontaminated CMD of these objects showing the membership probabilities and structural parameters as derived from King profile fitting.

  7. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  8. Statement by Harvard Corporation Committee on Shareholder Responsibility (CCSR) Regarding Stock in China Petroleum and Chemical Corporation (Sinopec Corporation)

    E-Print Network [OSTI]

    Corporation and its closely affiliated parent company, China Petrochemical Corporation (Sinopec Group listed company in which a dominant (68 percent) interest is held by China Petrochemical Corporation

  9. Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

    SciTech Connect (OSTI)

    ERTEN ESER

    2012-01-22T23:59:59.000Z

    The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

  10. Corporate Law's Current-Owner Bias

    E-Print Network [OSTI]

    Fried, Jesse M.

    2005-01-01T23:59:59.000Z

    Owner Bias in Corporate Governance Jesse Fried * Boalt Hallmy conclusion that corporate governance arrangements choseninterventions in corporate governance through the securities

  11. Corporate Law's Current-Owner Bias

    E-Print Network [OSTI]

    Fried, Jesse M.

    2006-01-01T23:59:59.000Z

    Owner Bias in Corporate Governance Jesse Fried * Boalt Hallmy conclusion that corporate governance arrangements choseninterventions in corporate governance through the securities

  12. Corporate Governance, the Environment, and the Internet

    E-Print Network [OSTI]

    Andrew, Jane

    2003-01-01T23:59:59.000Z

    contemporary society: Corporate governance at a crossroads.R. (1997). A survey of corporate governance. The Journal ofCorporate Governance, the Environment, and the Internet Jane

  13. Lesson from Fiascos in Russian Corporate Governance

    E-Print Network [OSTI]

    Fox, Merritt; Heller, Michael

    2000-01-01T23:59:59.000Z

    Cause Corporate Governance Failures . . . . . . . . . 1.understanding of how corporate governance works. See Heller,Shareholders in Corporate Governance (1999) (mimeo on file

  14. Lesson from Fiascos in Russian Corporate Governance

    E-Print Network [OSTI]

    Fox, Merritt B.; Heller, Michael A.

    1999-01-01T23:59:59.000Z

    Cause Corporate Governance Failures . . . . . . . . . 1.understanding of how corporate governance works. See Heller,Shareholders in Corporate Governance (1999) (mimeo on file

  15. Capital Structure Implications for Corporate Governance

    E-Print Network [OSTI]

    Rajan, Nishanth

    2012-01-01T23:59:59.000Z

    A. Roell, 2002, Corporate governance and control, ECGI-Enjoying the quiet life? Corporate governance and managerialGrinstein, 2007, Corporate governance and firm value: The

  16. Corporate Law, Social Norms and Belief Systems

    E-Print Network [OSTI]

    Eisenberg, Melvin

    1999-01-01T23:59:59.000Z

    fiduciary duties, corporate governance, and takeovers (Partinvestors in corporate governance. Often, the operation ofthe ALIs Principles of Corporate Governance provides that a

  17. Quality Assurance Corporate Board | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Assurance Corporate Board Quality Assurance Corporate Board The Office of Environmental Management (EM) Quality Assurance Corporate Board is an executive board that includes both...

  18. Essays in Behavioral Corporate Finance

    E-Print Network [OSTI]

    Zheng, Hui

    2012-01-01T23:59:59.000Z

    and practice of corporate finance: evidence from the field,Journal of Applied Corporate Finance 15, 823. 18. Graham,governance, Journal of Finance 63, 27372784. 21. Hackbarth,

  19. Corporate governance and insider trading

    E-Print Network [OSTI]

    Rozanov, Konstantin A

    2008-01-01T23:59:59.000Z

    I investigate the relation between corporate governance and insider trading by corporate executives. Despite the general view that trade on non-public information adversely affects capital market participants, the impact ...

  20. Corporate governance and banking regulation

    E-Print Network [OSTI]

    Alexander, Kern

    The globalisation of banking markets has raised important issues regarding corporate governance regulation for banking institutions. This research paper addresses some of the major issues of corporate governance as it relates to banking regulation...

  1. 3M Corporation Abbott Laboratories

    E-Print Network [OSTI]

    Napier, Terrence

    . Agilent Technologies, Inc. Air Products Foundation Alaska Airlines Albemarle Corporation Alcoa Foundation Energy Group, Inc. Corning Incorporated Foundation Crayola, LLC Deloitte Foundation Delta Air Lines3M Corporation Abbott Laboratories Adage Capital Management, LP Adams Electric Cooperative, Inc

  2. Better Buildings Residential Network Membership Form | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China U.S. Department ofJune 2, 2015Energyon23264Compare energyMembership form from

  3. Forestry Commission England Corporate Plan

    E-Print Network [OSTI]

    Forestry Commission England Corporate Plan 2011-15 This is the Corporate Plan for the Forestry Commission in England. It is one of a suite of plans including those for Forestry Commission (GB) and Forest Research. Page 1Forestry Commission England Corporate Plan 2011-15 #12;Page 2Forestry Commission England

  4. Press Release Corporate Communications

    E-Print Network [OSTI]

    Haller-Dintelmann, Robert

    Page: 1/2 Press Release Corporate Communications Karolinenplatz 5 D-64289 Darmstadt Germany Your.ch@pvw.tu- darmstadt.de Internet: http://www.tu- darmstadt.de/presse e-mail: presse@tu-darmstadt.de On Cloud Nine TU). She intends to use the funding for basic research into the programming of software that will be fit

  5. Antecedents of corporate volunteerism

    E-Print Network [OSTI]

    Henning, Jaime Blaine

    2009-05-15T23:59:59.000Z

    LIST OF FIGURES FIGURE Page 1 Hypothesized relationships between the perceived locus of causality, functional motives, and theory of planned behavior variables ....................... 41 2 Significant... engages in, independent of work, with or without the support of the employer, whereas corporate volunteerism (CV) requires some form of knowledge and support for the volunteering on the part of the employer (Graff, 2004; Lukka, 2000; Seel, 1995...

  6. Maximum stellar mass versus cluster membership number revisited

    E-Print Network [OSTI]

    Th. Maschberger; C. J. Clarke

    2008-09-05T23:59:59.000Z

    We have made a new compilation of observations of maximum stellar mass versus cluster membership number from the literature, which we analyse for consistency with the predictions of a simple random drawing hypothesis for stellar mass selection in clusters. Previously, Weidner and Kroupa have suggested that the maximum stellar mass is lower, in low mass clusters, than would be expected on the basis of random drawing, and have pointed out that this could have important implications for steepening the integrated initial mass function of the Galaxy (the IGIMF) at high masses. Our compilation demonstrates how the observed distribution in the plane of maximum stellar mass versus membership number is affected by the method of target selection; in particular, rather low n clusters with large maximum stellar masses are abundant in observational datasets that specifically seek clusters in the environs of high mass stars. Although we do not consider our compilation to be either complete or unbiased, we discuss the method by which such data should be statistically analysed. Our very provisional conclusion is that the data is not indicating any striking deviation from the expectations of random drawing.

  7. Application as new OSMC Organizational Member [An organizational OSMC membership application should contain approximately the following:

    E-Print Network [OSTI]

    Zhao, Yuxiao

    should contain approximately the following:] Date. yyyy-month-day To: Open Source Modelica Consortium number or equivalent if available Application for Organizational Membership in the Open Source Modelica Consortium (OSMC) Organization-name hereby applies for membership in the Open Source Modelica Consortium

  8. Fuzzy membership function optimization for system identification using an extended Kalman filter

    E-Print Network [OSTI]

    Simon, Dan

    Fuzzy membership function optimization for system identification using an extended Kalman filter an extended Kalman filter to optimize the membership functions for system modeling, or system identification is that the proposed system acts as a noise-reducing filter. We demonstrate that the extended Kalman filter can

  9. Home Meetings Publications Membership Career Central Advertise / Exhibit About MRS Advocacy Store

    E-Print Network [OSTI]

    Lin, Zhiqun

    Home Meetings Publications Membership Career Central Advertise / Exhibit About MRS Advocacy Store the formation of multiwalled carbon nanotube (MWNT) rings (i.e., directed self-assembly). Specifically, a drop MRS Access technical papers FREE View Membership Directory Enjoy Member-Only discounts Sign up

  10. Japanese Corporate Governance: The Hidden Problems of the Corporate Law and Their Solutions

    E-Print Network [OSTI]

    Shishido, Zenichi

    1999-01-01T23:59:59.000Z

    norm. Japanese Corporate Governance: The Hidden Problems ofsame time. Arguments on corporate governance can be dividedinto two types: corporate governance in the narrow sense and

  11. Benchmarking Corporate Energy Management

    E-Print Network [OSTI]

    Norland, D. L.

    BENCHMARKING CORPORATE ENERGY MANAGEMENT Dr. Douglas L. Norland Director of Research and Industrial Programs Alliance to Save Energy Washington, DC ABSTRACT There is growing interest among energy managers in finding out how their company...'s energy management procedures and perfonnance compare to that of other companies. Energy management involves everything from setting goals and targets to implementing best maintenance practices. This paper, however, discusses benchmarking energy...

  12. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN

  13. Gender Diversity in Corporate Leadership

    E-Print Network [OSTI]

    McLean, Lindsey

    2011-01-01T23:59:59.000Z

    ceiling and attain top leadership positions has positivehierarchy. Thus, changing leadership may be a mechanism toDiversity in Corporate Leadership RECENTLY RELEASED WORKING

  14. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling7 AugustAFRICAN3uj: ;;I : T' j-jE: i tCORPORATION

  15. LANL named 2010 top corporate volunteer organization

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2010 top corporate volunteer organization LANL named 2010 top corporate volunteer organization The Laboratory ranked ahead of dozens of other qualifying companies with 10,000 or...

  16. Implementing a Corporate Energy Management System

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Implementing a Corporate Energy Management System" Steve Schultz Corporate Energy Manager 3M Presented at the U.S. Department of Energy Industrial Technologies Program June 3, 2010...

  17. A Latent Mixed Membership Model for Relational Data Edoardo Airoldi, David Blei, Eric Xing

    E-Print Network [OSTI]

    Murphy, Robert F.

    A Latent Mixed Membership Model for Relational Data Edoardo Airoldi, David Blei, Eric Xing School of Computer Science Carnegie Mellon University {eairoldi,blei,xing}@cs.cmu.edu Stephen Fienberg Department

  18. The University of Texas at Dallas 2014-2015 Academic Senate Membership

    E-Print Network [OSTI]

    O'Toole, Alice J.

    -Dhahir Zalman Balanov Poras Balsara Karen Baynham Kurt Beron Adam Brackin Judd Bradbury Gail Breen Matthew Brown-2015 Academic Senate Membership Yulia Gel Lev Gelb Jennifer Holmes M. Ali Hooshyar M. Ishak-Boushaki Joe Izen

  19. redMaPPer IV: Photometric Membership Identification of Cluster Galaxies with 1% Precision

    E-Print Network [OSTI]

    Rozo, Eduardo; Becker, Matthew; Reddick, Rachel M; Wechsler, Risa H

    2014-01-01T23:59:59.000Z

    In order to study the galaxy population of galaxy clusters with photometric data one must be able to accurately discriminate between cluster members and non-members. The redMaPPer cluster finding algorithm treats this problem probabilistically. Here, we utilize SDSS and GAMA spectroscopic membership rates to validate the redMaPPer membership probability estimates for clusters with $z\\in[0.1,0.3]$. We find small - but correctable - biases, sourced by three different systematics. The first two were expected a priori, namely blue cluster galaxies and correlated structure along the line of sight. The third systematic is new: the redMaPPer template fitting exhibits a non-trivial dependence on photometric noise, which biases the original redMaPPer probabilities when utilizing noisy data. After correcting for these effects, we find exquisite agreement ($\\approx 1\\%$) between the photometric probability estimates and the spectroscopic membership rates, demonstrating that we can robustly recover cluster membership est...

  20. Corporate Jobs Tax Credit (Louisiana)

    Broader source: Energy.gov [DOE]

    Corporate Jobs Tax Credit is a one-time tax credit ranging from up to $225 for each net new permanent job created as the result of a new business start-up or the expansion of an existing one. ...

  1. Power Reliability at BASF Corporation

    E-Print Network [OSTI]

    Theising, T. R.

    2011-01-01T23:59:59.000Z

    Power Reliability at BASF Corporation Thomas R. Theising Energy Systems Manager BASF Corporation ABSTRACT: Quality is defined not as what the supplier puts into the product but what the customer gets out and is willing to pay for. Power.... INTRODUCTION: BASF often identifies its? power quality by the effects it has on its ability to manufacture products. Improvements are made to remedy the power quality problems either through the elimination of the problems or through some means...

  2. Power Reliability at BASF Corporation

    E-Print Network [OSTI]

    Theising, T. R.

    2012-01-01T23:59:59.000Z

    Power Reliability at BASF Corporation Thomas R. Theising Energy Systems Manager BASF Corporation ABSTRACT: Quality is defined not as what the supplier puts into the product but what the customer gets out and is willing to pay for. Power.... INTRODUCTION: BASF often identifies its? power quality by the effects it has on its ability to manufacture products. Improvements are made to remedy the power quality problems either through the elimination of the problems or through some means...

  3. Karnataka Power Corporation Limited and National Thermal Power...

    Open Energy Info (EERE)

    Limited and National Thermal Power Corporation JV Jump to: navigation, search Name: Karnataka Power Corporation Limited and National Thermal Power Corporation JV Place: India...

  4. Culture, Law, and Finance: Cultural Dimensions of Corporate Governance Laws

    E-Print Network [OSTI]

    Licht, Amir N.; Goldschmidt, Chanan; Schwartz, Shalom H.

    2001-01-01T23:59:59.000Z

    Protection and Corporate Governance, 58 J. Fin. Econ.the legal approach to corporate governance by presenting newlegal rules of corporate governance. 5 The need to take

  5. Corporate Governance, State-Contingent Control Rights, and Financial Distress

    E-Print Network [OSTI]

    Rasmussen, Robert K.

    2004-01-01T23:59:59.000Z

    20-6:00 pm, Boalt 13 Corporate Governance, State-ContingentRobert K. Rasmussen Corporate Governance, State-ContingentTraditional accounts of corporate governance focus on how

  6. U.S. Style Corporate Governance in Korea's Largest Companies

    E-Print Network [OSTI]

    Ehrlich, Craig; Kang, Dae-Seob

    2000-01-01T23:59:59.000Z

    E.g. , D. Gordon Smith, Corporate Governance and ManagerialPrinciples of Corporate Governance, http://www.oecd.orgdaf/Bank/OECD Global Corporate Governance Forum, Washington

  7. Corporate Social Responsibility as a Conflict Between Owners

    E-Print Network [OSTI]

    Rubin, Amir

    2005-01-01T23:59:59.000Z

    Metrick, 2003, Corporate governance and equity prices,to link CSR with corporate governance. Arguably this linkexpenditure and good corporate governance mechanisms are to

  8. How Big a Problem is U.S. Corporate Governance?

    E-Print Network [OSTI]

    Kaplan, Steve

    2007-01-01T23:59:59.000Z

    suggests that poor corporate governance or managerial powertheories argue that corporate governance deteriorated in thestealing CEOs or poor corporate governance cannot possibly

  9. Choice as Regulatory Reform: The Case of Japanese Corporate Governance

    E-Print Network [OSTI]

    Milhaupt, Curtis

    2004-01-01T23:59:59.000Z

    Globalization of Corporate Governance: Convergence of Formthe idea that U.S. corporate governance was a model for AsiaWoochan Kim, Does Corporate Governance Predict Firms Market

  10. Nuclear Safety Enforcement Letter issued to Sandia Corporation...

    Broader source: Energy.gov (indexed) [DOE]

    Enforcement Letter issued to Sandia Corporation Nuclear Safety Enforcement Letter issued to Sandia Corporation 9222014 Enforcement Letter, Sandia Corporation, September 22, 2014...

  11. abolishes corporate income: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5, 2014 12;Corporate Affiliates Chairman: Mark Ambrose San Diego Site Executive, Raytheon 12;Corporate Affiliates Program Welcome New CAP Members 12;Corporate Affiliates...

  12. agua corporal total: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5, 2014 12;Corporate Affiliates Chairman: Mark Ambrose San Diego Site Executive, Raytheon 12;Corporate Affiliates Program Welcome New CAP Members 12;Corporate Affiliates...

  13. abolishing corporate income: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5, 2014 12;Corporate Affiliates Chairman: Mark Ambrose San Diego Site Executive, Raytheon 12;Corporate Affiliates Program Welcome New CAP Members 12;Corporate Affiliates...

  14. Steffes Corporation Smart Grid RFI: Addressing Policy and Logistical...

    Energy Savers [EERE]

    Steffes Corporation Smart Grid RFI: Addressing Policy and Logistical Challenges Steffes Corporation Smart Grid RFI: Addressing Policy and Logistical Challenges Steffes Corporation...

  15. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  16. Matching Gift Companies LEHIGH UNIVERSITY 1 3M Corporation

    E-Print Network [OSTI]

    Gilchrist, James F.

    Corporation Foundation The Eaton Charitable Fund Electroline Corporation Eli Lilly and Company FoundationMatching Gift Companies LEHIGH UNIVERSITY 1 3M Corporation Abbott Laboratories Accenture Foundation Technologies, Inc. Air Products Air Products Foundation Albemarle Corporation Alcoa Foundation Alliance Capital

  17. Corporate Headquarters Tax Credit (West Virginia)

    Broader source: Energy.gov [DOE]

    The Corporate Headquarters Tax Credit is available to companies who relocate their corporate headquarters to West Virginia and create 15 new jobs. The credit can offset up to 100% of the tax...

  18. Corporate decision analysis : an engineering approach

    E-Print Network [OSTI]

    Tang, Victor, Ph.D. Massachusetts Institute of Technology

    2006-01-01T23:59:59.000Z

    We explore corporate decisions and their solutions under uncertainty using engineering methods. Corporate decisions tend to be complex; they are interdisciplinary and defy programmable solutions. To address these challenges, ...

  19. Corporate governance : the case for Asian REITs

    E-Print Network [OSTI]

    Tan, Denise, S.M. Massachusetts Institute of Technology

    2009-01-01T23:59:59.000Z

    At the entity level, the design of sound corporate governance mechanisms is critical for REITs that are preparing to go public. At the industry level, issues of transparency and corporate governance are consequential to ...

  20. The Market for Borrowing Corporate Bonds

    E-Print Network [OSTI]

    Asquith, Paul

    This paper describes the market for borrowing corporate bonds using a comprehensive data set from a major lender. The cost of borrowing corporate bonds is comparable to the cost of borrowing stock, between 10 and 20 basis ...

  1. Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures

    E-Print Network [OSTI]

    Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing

  2. Corporate Real Estate and Facilities Cost Reduction IBM Corporation | December 2, 2009 Page 1 of 7

    E-Print Network [OSTI]

    Corporate Real Estate and Facilities Cost Reduction IBM Corporation | December 2, 2009 Page 1 of 7 - Internal distribution only Corporate Real Estate and Facilities Cost Reduction Summary By moving and facilities costs by 15-20%, whilst still improving services. Successful cost reduction in corporate real

  3. Mastermind Session: Wisconsin Energy Conservation Corporation...

    Energy Savers [EERE]

    Corporation Better Buildings Neighborhood Program Peer Exchange Call: Program Sustainability Mastermind Session, featuring host Brian Driscoll, Wisconsin Energy Conservation...

  4. Essays on the Market for Corporate Control

    E-Print Network [OSTI]

    Kim, Hyunjung

    2011-02-22T23:59:59.000Z

    corporate governance play its role during this process? And why do managers often resist takeovers? The agency model this paper develops is compatible with existing theories on takeovers including neoclassical, inefficient stock market, and the free cash... .............................................................................................................. 72 IV CORPORATE GOVERNANCE DRIVEN TAKEOVERS ........................................... 82 1. The basic setting ................................................................................................. 82 2. Corporate...

  5. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  6. Hydrocarbon Signatures of Egg Maternity, Caste Membership and Reproductive Status in the Common Wasp

    E-Print Network [OSTI]

    Wenseleers, Tom

    Hydrocarbon Signatures of Egg Maternity, Caste Membership and Reproductive Status in the Common-laid and worker-laid eggs has never been investigated. Our aim, therefore, was to investigate if hydrocarbons on the surface of newly-laid eggs, and that there are pronounced quantitative differences in the hydrocarbon

  7. Network with the Geothermal Industries Finest. Important Note About All Memberships

    E-Print Network [OSTI]

    Heat Pump Association: Membership means effective promotion of ground source heat pump systems. Our about your special benefits Promotes the use of ground source heat pump systems internationally priveleges for designate member A free copy of Closed-Loop/Ground-Source Heat Pump Systems Installation

  8. Genetic algorithms for tuning fuzzy membership functions in flight control software

    E-Print Network [OSTI]

    Harral, Vance Quinton

    1995-01-01T23:59:59.000Z

    such as "Takeoff' and "Cruise" are defined in a rulebase file, along with fuzzy membership functions (MBFs) which map the flight modes to expected partitions of the aircraft state space. The FMI uses a fuzzy logic inference engine to determine the current flight...

  9. IEEE TRANSACTIONS ON FUZZY SYSTEMS, VOL. 11, NO. 2, APRIL 2003 173 Modeling Proportional Membership in

    E-Print Network [OSTI]

    Mirkin, Boris

    , pattern recognition and fuzzy modeling. The best known approach to fuzzy clustering is the method of fuzzyIEEE TRANSACTIONS ON FUZZY SYSTEMS, VOL. 11, NO. 2, APRIL 2003 173 Modeling Proportional Membership for mining typological structures based on a fuzzy clustering model of how the data are generated from

  10. Internship opportunity with URS Corporation

    E-Print Network [OSTI]

    Internship opportunity with URS Corporation URS is the largest global engineering design firm of undergraduate studies to participate in an internship program with the School of Ocean & Earth Science & Technology (SOEST) at the University of Hawaii. The intent of the internship is two-fold: · To establish

  11. Hindawi Publishing Corporation Prostate Cancer

    E-Print Network [OSTI]

    Ahn, Hongshik

    Hindawi Publishing Corporation Prostate Cancer Volume 2011, Article ID 176164, 7 pages doi:10.1155/2011/176164 Clinical Study Effect of Zoledronic Acid on Bone Mineral Density in Men with Prostate Cancer Receiving cancer is well recognized. We assessed the effects of quarterly infusion of zoledronic acid on bone

  12. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  13. GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

    SciTech Connect (OSTI)

    Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

  14. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  15. Corporate Security and Conflict Outcomes

    E-Print Network [OSTI]

    Tkach, Benjamin K

    2013-10-21T23:59:59.000Z

    militaries (Avant 2000). Existing research has shown a steady increase in the number and employment of private security firms (PSFs) over the last five decades due to expansion of global market demand for private security (Avant 2005; Dunigan 2011; Singer... prominent role in international aviation security (Abrahamsen and Williams 2011). Because PSFs are based largely on corporate profit motivations, contract fulfillment and reputation are critical for firms to secure market share. The international market...

  16. BASF Corporate Energy Management Process

    E-Print Network [OSTI]

    Geiger, T.

    2014-01-01T23:59:59.000Z

    Process 2 2 ? Brief introduction to BASF ? BASF Corporate Energy Management ? Management Support ? Goals ? Continuous Improvement ? Knowledge Sharing ? Recognition ESL-IE-14-05-30 Proceedings of the Thrity-Sixth Industrial Energy Technology Conference... 2013 Sales: 74 Billion Employees: 112,000 Company overview BASF The Chemical Company 3 ESL-IE-14-05-30 Proceedings of the Thrity-Sixth Industrial Energy Technology Conference New Orleans, LA. May 20-23, 2014 Structure of BASFs segments...

  17. Singapore's Economic Balancing Act: How a Company's Collapse Challenged the Country's New Corporate Governance Regime

    E-Print Network [OSTI]

    Roseme, Sam

    2007-01-01T23:59:59.000Z

    THE COUNTRY'S NEW CORPORATE GOVERNANCE REGIME Sam RosemeON SINGAPORE'S CORPORATE GOVERNANCE REGIME . A.CORPORATE GOVERNANCE .. B. CHINA'S

  18. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  19. Edoardo M. Airoldi, David, M. Blei, Elena A. Erosheva, and Stephen E. Fienberg Handbook of Mixed Membership

    E-Print Network [OSTI]

    Airoldi, Edoardo "Edo"

    Edoardo M. Airoldi, David, M. Blei, Elena A. Erosheva, and Stephen E. Fienberg Handbook of Mixed Introduction to Mixed Membership Models and Methods 3 Edoardo M. Airoldi, David M. Blei, Elena A. Erosheva

  20. Of Enterprise Principles & Corporate Groups: Does Corporate Law Reach Human Rights?

    E-Print Network [OSTI]

    Harper Ho, Virginia E.

    2013-03-01T23:59:59.000Z

    conduct by remote affiliates and business partners of vast multinational corporate organizations. Corporate law, in contrast, governs the "internal affairs" of discrete legal entities within a given jurisdiction, each protected by a limited liability...

  1. North American Electric Reliability Corporation (NERC): Reliability...

    Office of Environmental Management (EM)

    (NERC): Reliability Considerations from the Integration of Smart Grid North American Electric Reliability Corporation (NERC): Reliability Considerations from the Integration of...

  2. Panasonic Corporation Energy Company formerly Matsushita Battery...

    Open Energy Info (EERE)

    to: navigation, search Name: Panasonic Corporation Energy Company (formerly Matsushita Battery Industrial Co) Place: Moriguchi, Osaka, Japan Zip: 570-8511 Product: Producer of...

  3. Duro Corporation: Proposed Penalty (2014-CE-23009)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that Duro Corporation failed to certify cooking products as compliant with the applicable energy conservation standards.

  4. Resources, real options, and corporate strategy

    E-Print Network [OSTI]

    Bernardo, Antonio; Chowdhry, Bhagwan

    1998-01-01T23:59:59.000Z

    211234 Resources, real options, and corporate strategy $D83; G30; G31 Keywords: Real options; Valuation; Corporateparticipants at the Real Options Conference at Northwestern

  5. PRELIMINARY SURVEY OF WESTINGHOUSE ELECTRIC CORPORATION EAST...

    Office of Legacy Management (LM)

    OAK RIDGE NATIONAL LABORATORY operated by UNION CARBIDE CORPORATION for the DEPARTMENT OF ENERGY as part of the Formerly Utilized Sites-- Remedial Action Program WESTINGHOUSE...

  6. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect

  7. Corporate Plan Page 1Forestry Commission England Corporate Plan 2011-15

    E-Print Network [OSTI]

    Corporate Plan 2011-15 Page 1Forestry Commission England Corporate Plan 2011-15 Welcome This is the Corporate Plan for the Forestry Commission in England. It is one of a suite of plans including those for Forestry Commission (GB) and Forest Research. This document has been optimised for on-screen reading

  8. Information GRID in the Corporate World Information GRID in the Corporate World

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Information GRID in the Corporate World Information GRID in the Corporate World .Bogonikolos Zeus Ontology Grid) project, an EU project funded under the Information Society Technologies programme and EAI Tools is discussed. The COG (Corporate Ontology Grid) project addresses the problem of accessing

  9. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    E-Print Network [OSTI]

    Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

    2010-08-24T23:59:59.000Z

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  10. Carbona Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomassSustainableCSL GasPermitsGreen BioEnergy LLC JumpCarbona Corporation Jump to:

  11. JYT Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2,AUDIT REPORTEnergyFarmsPower Co LtdTN LLC Jump to:PtyJYT Corporation Jump

  12. Kirmart Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2,AUDIT REPORTEnergyFarmsPower Co LtdTN LLCKirmart Corporation Jump to:

  13. Vairex Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTri Global EnergyUtility Rate Home >Vairex Corporation Jump to:

  14. AES Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcat 1 WindtheEnergySulfonate asAEE Solar Jump to:AES Corporation

  15. Powerex Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroupPerfectenergyInformation toPower and ElectricityPowerex Corporation

  16. ISE Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, search OpenEIHesperia,IDGWP Wind Farm Jump to:ILab IncubatorISE Corporation Jump

  17. Pemery Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall,Missouri:EnergyOssian,Parle BiscuitsPemery Corporation Jump to: navigation,

  18. Emcore Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazel Crest,Energy Information ElkhornElwood,Emcore Corporation Jump to:

  19. Epco Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazel Crest,EnergySerranopolisEnviroMission LtdEnvisolar JumpEpco Corporation

  20. Corporate Depreciation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew|Core Analysis At Geysers|Cornwall,Corporate Depreciation

  1. Corporate Exemption | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew|Core Analysis At Geysers|Cornwall,Corporate

  2. Sinosteel Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with form HistoryRistmaSinosteel Corporation Jump to: navigation, search Name:

  3. Sojitz Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with form HistoryRistmaSinosteel CorporationSocovoltaic SystemsSoitec SA

  4. corporate | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron4 Self-Scrubbing:,, , ., ..., ,+ . :,2013constantconvertCorporate

  5. Ryokuseisha Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to:Roscommon County,Vermont:Kentucky:Wisconsin:Ryokuseisha Corporation

  6. EXAR Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualPropertyd8c-a9ae-f8521cbb8489 No revision| Open Jump to:(RES-AEI) | OpenEUHYFISEXAR Corporation

  7. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  8. Fact #870: April 27, 2015 Corporate Average Fuel Economy Progress...

    Office of Environmental Management (EM)

    Fact 870: April 27, 2015 Corporate Average Fuel Economy Progress, 1978-2014 Fact 870: April 27, 2015 Corporate Average Fuel Economy Progress, 1978-2014 The Corporate Average Fuel...

  9. Law, Politics and Markets of Corporate Governance: Institutional Investors' Influence

    E-Print Network [OSTI]

    Carniglia, Stephen Davis

    2013-01-01T23:59:59.000Z

    S. , The State of Corporate Governance Research, 23 R.What Matters in Corporate Governance? , 22 R. Fin. StudiesLegitimacy and Corporate Governance, 32 Del. J. Corp. L.

  10. Measuring Efficiency in Corporate Law: The Role of Shareholder Primacy

    E-Print Network [OSTI]

    Fisch, Jill

    2004-01-01T23:59:59.000Z

    17 Empirical studies of corporate governance reforms such asDirectors as a Corporate Governance Mechanism: Theories andMeans and Ends of Corporate Governance, 97 N W .U. L. R EV .

  11. Preliminary Notice of Violation, Safety and Ecology Corporation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Safety and Ecology Corporation - EA-2005-03 Preliminary Notice of Violation, Safety and Ecology Corporation - EA-2005-03 June 14, 2005 Issued to Safety and Ecology Corporation...

  12. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1

    E-Print Network [OSTI]

    Nabben, Reinhard

    Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence

  13. Corporate Training On-Site Online Global

    E-Print Network [OSTI]

    Barrett, Jeffrey A.

    MAKE THE RIGHT MOVE Corporate Training On-Site Online Global IMPROVE YOUR COMPETITIVE ADVANTAGE WITH WORLD-CLASS ON-SITE AND ONLINE SOLUTIONS TAILORED TO MEET YOUR BUSINESS AND EMPLOYEE TRAINING NEEDS a competitive advantage depends on how well your staff executes. UCIrvineExtension's Corporate Training helps

  14. QUESTIONING THE RELEVANCE OF CORPORATE SOCIAL PERFORMANCE

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    on the limits of the concept of Corporate Social Performance (CSP) and its instrumentation in the form on Corporate Social Performance (CSP) and its instrumentation in the form of models for measuring form, the BSC reduces its search for balance to three essential Stakeholders: employees, customers

  15. Is Sustainability Attractive for Corporate Real Estate

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Is Sustainability Attractive for Corporate Real Estate Decisions ? Research Center ESSEC Working Is Sustainability Attractive for Corporate Real Estate Decisions? Ingrid Nappi-Choulet Professor ESSEC BUSINESS SCHOOL Real Estate and Sustainable Development Chair nappi@essec.fr Aurlien Dcamps Researcher ESSEC

  16. Corporate Political Donations: Investment or Agency?

    E-Print Network [OSTI]

    Aggarwal, Rajesh K.; Meschke, Felix; Wang, Tracy Yue

    2012-04-01T23:59:59.000Z

    are negatively correlated with returns. A $10,000 increase in donations is associated with a reduction in annual excess returns of 7.4 basis points. Worse corporate governance is associated with larger donations. Even after controlling for corporate governance...

  17. 2011 IBM Corporation Computer system energy management

    E-Print Network [OSTI]

    Shi, Weisong

    level EnergyScale Microcontroller IBM Systems Director Policy management Power & performance 2011 IBM Corporation Computer system energy management Charles Lefurgy 28 July 2011 #12; 2011 IBM Corporation2 Outline A short history of server power management POWER7 EnergyScale AMESTER power

  18. Corporate Venture Capital (CVC) Seeking Innovation and

    E-Print Network [OSTI]

    , Technology Innovation Program, National Institute of Standards and Technology #12;Corporate Venture Capital, Deputy Director Technology Innovation Program Marc G. Stanley, Director #12;ii Acknowledgments T his policymakers in the role of corporate venture capital (CVC) in technology innovation. The research included

  19. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  20. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01T23:59:59.000Z

    T. Henderson, High- Speed InGaP/GaAs HBTs Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite

  1. Sandia National Laboratories: ECIS-Automotive Fuel Cell Corporation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ClimateECAbout ECFacilitiesCRFECIS-Automotive Fuel Cell Corporation: Hydrocarbon Membrane Fuels the Success of Future Generation Vehicles ECIS-Automotive Fuel Cell Corporation:...

  2. Comments of New England Electric Transmission Corporation on...

    Broader source: Energy.gov (indexed) [DOE]

    out of time and comments of New England Electric Transmission Corporation, New England Hydro-Transmission Electric Company, Inc. and New England Hydro-Transmission Corporation and...

  3. EA-1727: AE Polysilicon Corporation Polysilicon Production Facility...

    Office of Environmental Management (EM)

    7: AE Polysilicon Corporation Polysilicon Production Facility in Fairless Hills, PA EA-1727: AE Polysilicon Corporation Polysilicon Production Facility in Fairless Hills, PA...

  4. New York State Electric & Gas Corporation Smart Grid Demonstration...

    Open Energy Info (EERE)

    Electric & Gas Corporation Smart Grid Demonstration Project Jump to: navigation, search Project Lead New York State Electric & Gas Corporation Country United States Headquarters...

  5. IT Capital Planning Corporate Management Improvement Program (CMIP)

    Broader source: Energy.gov [DOE]

    The Corporate Management Improvement Program (CMIP) was initiated by the Department in recognition of the fact that corporate legacy systems that support administrative functions were nearing the...

  6. Trony Solar Corporation formerly Shenzhen Trony Science Technology...

    Open Energy Info (EERE)

    Trony Solar Corporation formerly Shenzhen Trony Science Technology Development Co Ltd Jump to: navigation, search Name: Trony Solar Corporation (formerly Shenzhen Trony Science &...

  7. EA-1631: Beacon Power Corporation Frequency Regulation Facility...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1: Beacon Power Corporation Frequency Regulation Facility in Stephentown, NY EA-1631: Beacon Power Corporation Frequency Regulation Facility in Stephentown, NY February 2, 2009...

  8. Shenyang Huachuang Wind Energy Corporation HCWE aka China Creative...

    Open Energy Info (EERE)

    Shenyang Huachuang Wind Energy Corporation HCWE aka China Creative Wind Energy Co Ltd Jump to: navigation, search Name: Shenyang Huachuang Wind Energy Corporation (HCWE) (aka China...

  9. Testimonials - Partnerships in R&D - Capstone Turbine Corporation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    R&D - Capstone Turbine Corporation Testimonials - Partnerships in R&D - Capstone Turbine Corporation Addthis Text Version The words Office of Energy Efficiency and Renewable Energy...

  10. Integration of the EM Corporate QA Performance Metrics With Performanc...

    Office of Environmental Management (EM)

    Integration of the EM Corporate QA Performance Metrics With Performance Analysis Process Integration of the EM Corporate QA Performance Metrics With Performance Analysis Process...

  11. Application for Associate Membership at CERN by the Government of the Islamic Republic of Pakistan Report by the fact-finding Task Force

    E-Print Network [OSTI]

    2014-01-01T23:59:59.000Z

    Application for Associate Membership at CERN by the Government of the Islamic Republic of Pakistan Report by the fact-finding Task Force

  12. Temperature measurement in the Intel Efraim Rotem Mobile Platform Group, Intel corporation

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    , Intel corporation Jim Hermerding Mobile platform Group, Intel corporation Cohen Aviad - Microprocessor

  13. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  14. Performance Assessment and Recommendations for Rejuvenation of a Permeable Reactive Barrier: Cotter Corporations Caon City, Colorado, Uranium Mill

    Broader source: Energy.gov [DOE]

    Performance Assessment and Recommendations for Rejuvenation of a Permeable Reactive Barrier: Cotter Corporations Canon City, Colorado, Uranium Mill (April 2005)

  15. Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta

    E-Print Network [OSTI]

    Svane, Axel Torstein

    69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure

  16. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region

  17. Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    del Alamo, Jess A.

    Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA tpalacios@mit.edu; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors

  18. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  19. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

  20. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  1. A Multiple Network Approach to Corporate Governance

    E-Print Network [OSTI]

    Bonacina, Fausto; Moretto, Enrico; Stefani, Silvana; Torriero, Anna

    2014-01-01T23:59:59.000Z

    In this work, we consider Corporate Governance ties among companies from a multiple network perspective. Such a structurenaturally arises from the close interrelation between the Shareholding Network and the Board of Directors network. Inorder to capture the simultaneous effects on both networks on Corporate Governance, we propose to model the Corporate Governance multiple network structure via tensor analysis. In particular, we consider the TOPHITS model, based on the PARAFAC tensor decomposition, to show that tensor techniques can be successfully applied in this context. After providing some empirical results from the Italian financial market in the univariate case, we will show that a tensor-based multiple network approach can reveal important information.

  2. Daiwa House Industry Co., Ltd. Asahi Kasei Amidas Corporation Sompo Japan Insurance Inc. Nihon Shokken Holdings Co., Ltd. Sysmex Corporation NS Solutions Corporation Fujitsu Research Institute Rakuten Inc. Nomura Research Institute, Ltd. Toray Industries,

    E-Print Network [OSTI]

    Banbara, Mutsunori

    Daiwa House Industry Co., Ltd. Asahi Kasei Amidas Corporation Sompo Japan Insurance Inc. Nihon Shokken Holdings Co., Ltd. Sysmex Corporation NS Solutions Corporation Fujitsu Research Institute Corporation Kawasaki Heavy Industries, Ltd. All Nippon Airways Co., Ltd. Lotteria Co., Ltd. Kao

  3. SPP Membership

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Western Area Power Administration (Western) Transmission and Ancillary Services Formula Rates for Pick-Sloan Missouri Basin Program--Eastern Division (P-SMBP--ED ) was...

  4. Membership Finland

    ScienceCinema (OSTI)

    None

    2011-04-25T23:59:59.000Z

    Le DG C.Rubbia et la vice prsidente du conseil du Cern souhaite la bienvenue l'adhsion de la Finlande, comme 15me membre du Cern depuis le 1. janvier 1991 en prsence du secrtaire generale et de l'ambassadeur

  5. Current Membership

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution4 Department ofDepartment

  6. Modeling Temporal Behavior in Large Networks: A Dynamic Mixed-Membership Model

    SciTech Connect (OSTI)

    Rossi, R; Gallagher, B; Neville, J; Henderson, K

    2011-11-11T23:59:59.000Z

    Given a large time-evolving network, how can we model and characterize the temporal behaviors of individual nodes (and network states)? How can we model the behavioral transition patterns of nodes? We propose a temporal behavior model that captures the 'roles' of nodes in the graph and how they evolve over time. The proposed dynamic behavioral mixed-membership model (DBMM) is scalable, fully automatic (no user-defined parameters), non-parametric/data-driven (no specific functional form or parameterization), interpretable (identifies explainable patterns), and flexible (applicable to dynamic and streaming networks). Moreover, the interpretable behavioral roles are generalizable, computationally efficient, and natively supports attributes. We applied our model for (a) identifying patterns and trends of nodes and network states based on the temporal behavior, (b) predicting future structural changes, and (c) detecting unusual temporal behavior transitions. We use eight large real-world datasets from different time-evolving settings (dynamic and streaming). In particular, we model the evolving mixed-memberships and the corresponding behavioral transitions of Twitter, Facebook, IP-Traces, Email (University), Internet AS, Enron, Reality, and IMDB. The experiments demonstrate the scalability, flexibility, and effectiveness of our model for identifying interesting patterns, detecting unusual structural transitions, and predicting the future structural changes of the network and individual nodes.

  7. UAW Local 2865 Membership Election Form UAW Local 2865 is the Union representing academic student employees (ASEs) at the University of California

    E-Print Network [OSTI]

    Barrett, Jeffrey A.

    07/24/12 UAW Local 2865 Membership Election Form UAW Local 2865 is the Union representing academic student employees (ASEs) at the University of California (UC). As the exclusive representative, the Union representatives, and otherwise participate in the Union. Or I decline membership in UAW Local 2865. As a non

  8. Essays on consumption cycles and corporate finance

    E-Print Network [OSTI]

    Issler, Paulo Floriano

    2013-01-01T23:59:59.000Z

    In: The Journal of Finance 41.1, pp. 1937. Flannery, Markand practice of corporate finance: evidence from the field.Issues. In: Journal of Finance 51.5, pp. 180933. Hamilton,

  9. Corporate Analysis of DOE Safety Performance

    Broader source: Energy.gov [DOE]

    The Office of Environment, Health, Safety and Security (EHSS), Office of Analysis develops analysis tools and performance dashboards, and conducts analysis of DOE safety performance corporately and on a variety of specific environment, safety and health topics.

  10. 3M's Corporate Approach to Energy Management

    E-Print Network [OSTI]

    Schultz, S. C.; Bingham, P. R.

    number of companies have recognized the benefits of developing structured approaches to improving their energy efficiency through means that are also compatible with being environmentally responsible. 3M has long been recognized as a corporate...

  11. Law as Economy: Convention, Corporation, Currency

    E-Print Network [OSTI]

    Barrett, Jeffrey A.

    1015 Law as Economy: Convention, Corporation, Currency Ritu Birla* I. Law as Economy: Nomos. Law Inside/Outside Economy of an orthodox faith in economy as universal law, that is, in the free market as the law of the universe

  12. Refundable Clean Heating Fuel Tax Credit (Corporate)

    Broader source: Energy.gov [DOE]

    The state of New York began offering a corporate income tax credit for biodiesel purchases used for residential space heating and water heating beginning in 2006. The original credit was authorized...

  13. Alternative Energy Development Incentive (Corporate) (Utah)

    Broader source: Energy.gov [DOE]

    The Alternative Energy Development Incentive (AEDI) is a post-performance non-refundable tax credit for 75% of new state tax revenues (including, state, corporate, sales and withholding taxes) over...

  14. Selecting Financing Strategies to Overcome Corporate Barriers

    E-Print Network [OSTI]

    Michaelson, M. L.

    1984-01-01T23:59:59.000Z

    , or longer than the list of presentations at this year's Industrial Energy Conservation Conference. This paper will focus on two of the many potential answers. First, the corporate decision making process in industrial firms presents many obstacles to a final...

  15. Managing preventative maintenance activities at Intel Corporation

    E-Print Network [OSTI]

    Fearing, Rebecca Cassler

    2006-01-01T23:59:59.000Z

    The work for this thesis was completed at Intel Corporation in Colorado Springs, Colorado at Fab 23, a semiconductor fabrication facility making flash memory. The project focused on evaluating and managing preventative ...

  16. Renewable Energy Production Tax Credit (Corporate)

    Broader source: Energy.gov [DOE]

    Enacted in 2002, the New Mexico Renewable Energy Production Tax Credit provides a tax credit against the corporate income tax of one cent per kilowatt-hour for companies that generate electricity...

  17. IBM Software Group Copyright IBM Corporation 2007

    E-Print Network [OSTI]

    Componentization of existing code Assembler programs repackaged as reusable objects Breaks monolithic code base Copyright IBM Corporation 2007Page 4 z/TPF fits into your Services Centric Plug and Play Strategy Transport

  18. Energy Conservation in China North Industries Corporation

    E-Print Network [OSTI]

    You, W. T.; De, C. H.; Chu, J. X.; Fu, L. R.

    . In some plants which have stable steam consumption we have established small scale power and steam cogeneration. This has improved boilers' efficiencies and utilization of energy. For further reduction oil firing, we have been studying on alternative... ENERGY CONSERVATION IN CHINA NORTH INDUSTRIES CORPORATION Wang Tian You, Chen Hua De, Jing Xing Chu, Ling Rui Fu, China North Industries Corporation Beijing, People's Republic of China ABSTRACT This paper describes an overview of the energy...

  19. Corporate social responsibility (CSR) : responsibility or Innovation? : an analysis of the feedback between CSR activities and the expectations placed upon corporations

    E-Print Network [OSTI]

    Rodriguez, Adrian Xavier

    2010-01-01T23:59:59.000Z

    This thesis uses case study and interview data to present a framework for analyzing corporate behavior in order to define corporate social responsibility (CSR). It answers the question: Can corporations tie corporate social ...

  20. Investor Sentiment and Antitrust Law as Determinants of Corporate Ownership Structure: The great Merger Wave of 1897 to 1903

    E-Print Network [OSTI]

    Cheffins, Brian R.

    2002-01-01T23:59:59.000Z

    for Corporate Control: Corporate Governance and EconomicCurrent Trends in Corporate Governance: Going From London toon international corporate governance. This paper retrieves

  1. Investor Sentiment and Antitrust Law as Determinants of Corporate Ownership Structure: The Great Merger Wave of 1897 to 1903

    E-Print Network [OSTI]

    Cheffins, Brian

    2002-01-01T23:59:59.000Z

    for Corporate Control: Corporate Governance and EconomicCurrent Trends in Corporate Governance: Going From London toon international corporate governance. This paper retrieves

  2. Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

    E-Print Network [OSTI]

    Coldren, Larry A.

    Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous

  3. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23T23:59:59.000Z

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  4. Page 1Forestry Commission England Corporate Plan 2012-13 Corporate Plan

    E-Print Network [OSTI]

    Page 1Forestry Commission England Corporate Plan 2012-13 Corporate Plan 2012-13 #12;Page 2Forestry the environment and supporting a strong green economy, and the Forestry Commission is well placed to contribute toward this. The recent report from the Forestry Regulation Task Force highlighted the need to make

  5. Forthcoming in the inaugural issue of Journal of Chinese Economic and Business Studies China's Economic Growth After WTO Membership

    E-Print Network [OSTI]

    Forthcoming in the inaugural issue of Journal of Chinese Economic and Business Studies China's Economic Growth After WTO Membership Jeffrey D. Sachs Earth Institute, Columbia University 405 Low Library, MC 4335 535 West 116th Street New York, NY 10027 sachs@columbia.edu and Wing Thye Woo Economics

  6. Power Networks Demonstration Centre Membership Award Scheme The University of Strathclyde's Power Networks Demonstration Centre (PNDC) is

    E-Print Network [OSTI]

    Mottram, Nigel

    the adoption of new `smart' technologies, from advanced power grids to electric cars and household appliances, accelerate the development and deployment of innovative technologies and provide a testbed for new smart grid planning to establish one can also submit an application for Tier 2 membership (visit http

  7. Other Federal/Multi-agency/State Committee Memberships, Eddie N. Bernard, Chairman, National Tsunami Hazard Mitigation Program, 1997-2004

    E-Print Network [OSTI]

    and Communications Committee, 2003-present. James E. Overland, US Marine Mammal Commission 2007-present James E Other Federal/Multi-agency/State Committee Memberships, 2004-2008 Eddie N. Bernard, Chairman and Communications Steering Committee for the US Integrated Ocean Observing System (IOOS/DMAC), 2002-2005 Steven C

  8. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01T23:59:59.000Z

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  9. Australian Efforts to Promote Corporate Social Responsibility: Can Disclosure Alone Suffice?

    E-Print Network [OSTI]

    von Nessen, Paul

    2009-01-01T23:59:59.000Z

    they comply with the ASX Corporate Governance Principles andAUSTRALIAN EFFORTS Corporate Governance Principles, isand Gary O'Donovan, Corporate Governance and Environmental

  10. Comparative Corporate Governance: Findings from a Workshop, March 14-15, 2008

    E-Print Network [OSTI]

    Huberty, Mark; Newsome, Akasemi; Street, Alex; Ziegler, J. Nicholas

    2008-01-01T23:59:59.000Z

    of Chicago, Corporate Governance: History withoutComparative Corporate Governance Findings from a Workshopon Comparative Corporate Governance, March 14-15, 2008

  11. The Maximands of Corporate Governance: A Theory of Values and Cognitive Style

    E-Print Network [OSTI]

    Licht, Amir

    2004-01-01T23:59:59.000Z

    roots of American corporate governance. See Mark J. Roe, Aover the maximands of corporate governance. 4 My goal ison the maximands of corporate governance, that identifies

  12. Firm Value and Corporate Governance: How the Former Determines the Latter

    E-Print Network [OSTI]

    Hermalin, Benjamin E.

    2008-01-01T23:59:59.000Z

    The Econometrics of Corporate Governance Studies, Cambridge,Firm Value and Corporate Governance: How the FormerAbstract A model of corporate governance must explain (i)

  13. Changes in Japanese Corporate Law and Governance: Revisiting the Convergence Debate

    E-Print Network [OSTI]

    Shishido, Zenichi

    2004-01-01T23:59:59.000Z

    of Path Dependence in Corporate Governance and Ownership.Convergence in Corporate Governance and Its Implicatins.2001). Globalizing Corporate Governance: Convergence of Form

  14. Imitate or Differentiate? Evaluating the validity of corporate social responsibility ratings

    E-Print Network [OSTI]

    Chatterji, Aaron K; Levine, David I. I.

    2008-01-01T23:59:59.000Z

    and A. Metrick Corporate Governance and Equity Prices. investors on corporate governance and social http://it focuses directly on corporate governance and is much more

  15. Corporate Governance from a Comparative Perspective: Specific Applications of the Duty of Loyalty in Korea

    E-Print Network [OSTI]

    Kwon, Jae Yeol

    2004-01-01T23:59:59.000Z

    transaction. Kon S. Kim, Corporate Governance in Korea, 8 J.ARTICLES CORPORATE GOVERNANCE FROM A COMPARATIVEof Care Standard in Corporate Governance, 75 IOWA L. REV. 1,

  16. The Role of Boards of Directors in Corporate Governance: A Conceptual Framework & Survey

    E-Print Network [OSTI]

    Adams, Renee; Hermalin, Benjamin E.; Weisbach, Michael S.

    2008-01-01T23:59:59.000Z

    Era of Heightened Corporate Governance, New York UniversityThe Emergence of Corporate Governance from Wall St. to MainAnna, ed. , Corporate Governance and Firm Organization,

  17. AlGaAs/InGaAs/AlGaAs Double Barrier

    E-Print Network [OSTI]

    Perera, A. G. Unil

    -state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due

  18. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...

  19. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

    2010-10-14T23:59:59.000Z

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  20. PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS

    E-Print Network [OSTI]

    McCluskey, Matthew

    -m thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-m GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied

  1. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  2. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.14 The growth of high-performance InGaP/ GaAs and InGaAs/InP single

  3. Hydra Fuel Cell Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtel JumpCounty, Texas: EnergyHy9 CorporationHydra Fuel Cell Corporation

  4. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)

    2000-04-17T23:59:59.000Z

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  5. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-10T23:59:59.000Z

    The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

  6. Fact #624: May 24, 2010 Corporate Average Fuel Economy Standards...

    Energy Savers [EERE]

    4: May 24, 2010 Corporate Average Fuel Economy Standards, Model Years 2012-2016 Fact 624: May 24, 2010 Corporate Average Fuel Economy Standards, Model Years 2012-2016 The final...

  7. Fact #870: April 27, 2015 Corporate Average Fuel Economy Progress...

    Energy Savers [EERE]

    70: April 27, 2015 Corporate Average Fuel Economy Progress, 1978-2014 - Dataset Fact 870: April 27, 2015 Corporate Average Fuel Economy Progress, 1978-2014 - Dataset Excel file...

  8. Corporate Energy Management: A Survey of Large Manufacturing Companies

    E-Print Network [OSTI]

    Norland, D. L.; Lind, L.

    Corporate practices regarding energy management vary substantially from one company to another. Some companies pay close attention to energy use throughout the corporation while others pay scant attention. This paper first describes what we call...

  9. DOE and Calpine Corporation Tap Geothermal Energy from Abandoned...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE and Calpine Corporation Tap Geothermal Energy from Abandoned Steam Wells DOE and Calpine Corporation Tap Geothermal Energy from Abandoned Steam Wells April 9, 2015 - 3:48pm...

  10. THE INTERFACE BETWEEN ENVIRONMENTAL ASSESSMENT AND CORPORATE RESPONSIBILITY: THE

    E-Print Network [OSTI]

    THE INTERFACE BETWEEN ENVIRONMENTAL ASSESSMENT AND CORPORATE RESPONSIBILITY: THE VICTOR DIAMOND Report No: 436 Title of Research Project: The Interface Between Environmental Assessment and Corporate: ___________________________________________ #12;iii ABSTRACT The environmental assessment and sustainable development literature recognizes

  11. Fitting In: Extreme Corporate Wellness and Organizational Communication

    E-Print Network [OSTI]

    James, Eric Preston

    2014-07-31T23:59:59.000Z

    In this dissertation I examine the intersection of organizational communication and what I name extreme corporate wellness. I define extreme corporate wellness as the push towards more radical fitness and workplace health promotion via the exercise...

  12. Copyright 2011 Northrop Grumman Corporation Northrop Grumman Information Systems (NGIS)

    E-Print Network [OSTI]

    from unattended sensors Space vulnerabilities and survivability Cyber security/informationCopyright 2011 Northrop Grumman Corporation Northrop Grumman Information Systems (NGIS Northrop Grumman Corporation Page 2 1. Overview Information Sponsor Northrop Grumman Information Systems

  13. Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

    E-Print Network [OSTI]

    Sirenko, Andrei

    Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced

  14. GaN0.011P0.989GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  15. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-11T23:59:59.000Z

    The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

  16. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2012-08-27T23:59:59.000Z

    In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

  17. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

    1997-03-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

  18. Rutgers Business School Professor Simi Kedia Corporate Finance

    E-Print Network [OSTI]

    Lin, Xiaodong

    Rutgers Business School Professor Simi Kedia Corporate Finance Office: WP - 1132 26:390:572 Phone Objectives: The objective of this course is to introduce doctoral students to research in corporate finance of capital, corporation finance and the theory of investment, American Economic Review. ***S. Myers and N

  19. CORPORATE: RECORDING Moderator: N/A

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Dredging Program Regulations Webinar, Mr. Joe Wilson. CORPORATE: RECORDING May 29, 2013 Julie Marcy: Okay to the first in our Dredging Operations Technical Support or DOTS Summer Webinar Meeting Series. This series of meetings is intended to share topics of concern about the National Dredging Program. And the meetings

  20. Hindawi Publishing Corporation International Journal of Hypertension

    E-Print Network [OSTI]

    Gleeson, Joseph G.

    Hindawi Publishing Corporation International Journal of Hypertension Volume 2012, Article ID 405892 of Hypertension: The Experience of the Cardiovascular Health Program in Chilean Primary Health Care Centers. To assess the blood pressure control and cardiovascular risk factors (CVRFs) in a population of hypertensive

  1. SUMMER PLACEMENT REPORT International Corporate Leadership Programme

    E-Print Network [OSTI]

    Berzins, M.

    SUMMER PLACEMENT REPORT International Corporate Leadership Programme Name: Faisal M. Khan Year lime product suitable for flue gas treatment. 2. Methods and Results Analytical Methods Used: Research:\\Faculty-of-Engineering\\Keyworth\\Projects\\ICLP\\Private\\2007\\Case Studies\\Faisal Khan - Singleton Birch.doc #12;Business Case: The potential market

  2. DOW CORNING CORPORATION Material Safety Data Sheet

    E-Print Network [OSTI]

    Garmestani, Hamid

    -88-3 Toluene The above components are hazardous as defined in 29 CFR 1910.1200. 3. HAZARDS or water spray. Water can be used to cool fire exposed containers. Fire Fighting Measures: Self to keep fire exposed containers cool. #12;DOW CORNING CORPORATION Material Safety Data Sheet Page: 3 of 8

  3. Senior projectS corporate Sponsored

    E-Print Network [OSTI]

    Stuart, Josh

    --Professor, Computer Engineering | http://users.soe.ucsc. edu/~larrabee/Site/Professor_Tracy_Larrabee.html Charlie McSenior projectS program corporate Sponsored Partner's Day May 31, 2012 Baskin School of Engineering earning their engineering degree and fulfilling this capstone design sequence. Our students who have

  4. Hindawi Publishing Corporation Advances in Multimedia

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Hindawi Publishing Corporation Advances in Multimedia Volume 2010, Article ID 386035, 17 pages doi:10.1155/2010/386035 Research Article MMSA: Metamodel Multimedia Software Architecture Makhlouf with heterogeneous multimedia components. It enables the description of the software architectures as a collection

  5. Hindawi Publishing Corporation Advances in Multimedia

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Hindawi Publishing Corporation Advances in Multimedia Volume 2013, Article ID 175064, 22 pages http camera is a challenge that multimedia community is facing with the proliferation of such sensors posed to the Multimedia research community earlier. For instance, visual lifelogs can record daily

  6. Hindawi Publishing Corporation Comparative and Functional Genomics

    E-Print Network [OSTI]

    Newcastle upon Tyne, University of

    Hindawi Publishing Corporation Comparative and Functional Genomics Volume 2007, Article ID 47304, 7 pages doi:10.1155/2007/47304 Meeting Report eGenomics: Cataloguing Our Complete Genome Collection III, Michigan State University, East Lansing, MI 48824, USA 3 The Institute for Genomic Research, 9712 Medical

  7. Libraries Reference Copyright 1996 -2003 Intel Corporation

    E-Print Network [OSTI]

    Fossati, Giovanni

    Intel Fortran Libraries Reference Copyright 1996 - 2003 Intel Corporation All Rights Reserved PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustain- ing applications. This Intel Fortran Libraries Reference as well as the software described in it is furnished

  8. Hindawi Publishing Corporation Journal of Sensors

    E-Print Network [OSTI]

    Calgary, University of

    Hindawi Publishing Corporation Journal of Sensors Volume 2010, Article ID 967245, 10 pages doi:10 artificial magnetic perturbations introduced close to the sensor on the host platform and without additional landmarks, like mountains or stones that early men could easily recognize and remember during their travels

  9. Hindawi Publishing Corporation Advances in Artificial Intelligence

    E-Print Network [OSTI]

    Hexmoor, Henry

    Coulomb's Law Pejman Kamkarian1 and Henry Hexmoor2 1 Electrical and Computer Engineering Department, supervisors can guide people to safety. In this paper, we combine Coulomb's electrical law, graph theoryHindawi Publishing Corporation Advances in Artificial Intelligence Volume 2012, Article ID 340615

  10. Hindawi Publishing Corporation International Journal of Ecology

    E-Print Network [OSTI]

    Rieseberg, Loren

    Hindawi Publishing Corporation International Journal of Ecology Volume 2012, Article ID 939862, 17 pages doi:10.1155/2012/939862 Review Article Parallel Ecological Speciation in Plants? Katherine L speciation, known as parallel ecological speciation, is one of several forms of evidence for ecology's role

  11. URANIUM MILLING ACTIVITIES AT SEQUOYAH FUELS CORPORATION

    E-Print Network [OSTI]

    unknown authors

    Sequoyah Fuels Corporation (SFC) describes previous operations at its Gore, Oklahoma, uranium conversion facility as: (1) the recovery of uranium by concentration and purification processes; and (2) the conversion of concentrated and purified uranium ore into uranium hexafluoride (UF 6), or the reduction of depleted uranium tetrafluoride (UF 4) to UF 6. SFC contends that these

  12. Researcher at Cerner Corporation Cerner Overview

    E-Print Network [OSTI]

    Jornsten, Rebecka

    Researcher at Cerner Corporation Cerner Overview Cerner is the leading U.S. supplier of healthcare Qualifications Minimum Qualifications: · Master's degree in biostatistics, epidemiology, MIS or related field. Preferred Qualifications: · Intermediate knowledge of both traditional statistical methods and modern

  13. Hindawi Publishing Corporation Journal of Nanotechnology

    E-Print Network [OSTI]

    Wang, Yan Alexander

    Hindawi Publishing Corporation Journal of Nanotechnology Volume 2010, Article ID 801789, 42 pages a general interest in both fundamental and practical nanotechnology. Over the past 20 years, research's -orbital axis vector (POAV) #12;2 Journal of Nanotechnology (0,0) (1,0) (2,0) (3,0) (4,0) (5,0) (1,1) (2

  14. Journal of Machine Learning Research 9 (2008) 1981-2014 Submitted 5/07; Revised 6/08; Published 9/08 Mixed Membership Stochastic Blockmodels

    E-Print Network [OSTI]

    Needleman, Daniel

    2008-01-01T23:59:59.000Z

    /08 Mixed Membership Stochastic Blockmodels Edoardo M. Airoldi EAIROLDI@PRINCETON.EDU David M. Blei BLEI M. Blei, Stephen E. Fienberg and Eric P. Xing. #12;AIROLDI, BLEI, FIENBERG AND XING the degree

  15. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  16. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic

  17. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    E-Print Network [OSTI]

    Saadat, Omair I

    2010-01-01T23:59:59.000Z

    This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

  18. Invited Paper GaN HEMT reliability

    E-Print Network [OSTI]

    del Alamo, Jess A.

    Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier

  19. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  20. InAs=InGaP=GaAs heterojunction power Schottky rectifiers

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier

  1. Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN

  2. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

    E-Print Network [OSTI]

    Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112¯2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd­Scuseria­ Ernzerhof

  3. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1s2p transition of Si donors in GaN

  4. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  5. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

    SciTech Connect (OSTI)

    Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-03-16T23:59:59.000Z

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

  6. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources

  7. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  8. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  9. In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a

    E-Print Network [OSTI]

    Yang, Kyounghoon

    205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN

  10. A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate

  11. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,

    E-Print Network [OSTI]

    Boyer, Edmond

    Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR

  12. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  13. HTS wire development at Intermagnetic General Corporation

    SciTech Connect (OSTI)

    Haldar, P. [Intermagnetics General Corp., Latham, NY (United States)

    1994-07-29T23:59:59.000Z

    The HTS wire development program at Intermagnetics General Corporation is outlined. Technical achievements in the Bi-2223, Tl-1223 and Tl-based conductor program are summarized. Long lengths of Tl-based HTS tapes with uniform transport properties have been fabricated. Multifilament samples of Tl-based HTS tapes have been fabricated for the first time. Optimization of thermomechanical processing is ongoing and weak links is still a major problem in P-I-T tapes. Future work is summarized.

  14. Corporate Information Systems | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative FuelsNovember 13, 2014Contributing Data Contributing DataCorporate Information Systems

  15. The Olympus Scandal and Corporate Governance Reform: Can Japan Find a Middle Ground between the Board Monitoring Model and Management Model

    E-Print Network [OSTI]

    Aronson, Bruce E.

    2012-01-01T23:59:59.000Z

    OLYMPUS SCANDAL AND CORPORATE GOVERNANCE REFORM: CAN JAPANScandal and Corporate Governance Issues A. Background of theunder Japan's Corporate Governance System ..

  16. High efficiency InGaP solar cells for InGaP/GaAs tandem cell application

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.

    1994-12-31T23:59:59.000Z

    In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.

  17. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  18. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates

    E-Print Network [OSTI]

    Manfra, Michael J.

    PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth

  19. ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown

  20. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)

    2014-03-10T23:59:59.000Z

    The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.

  1. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  2. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others

    1997-12-31T23:59:59.000Z

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  3. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20T23:59:59.000Z

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  4. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

    SciTech Connect (OSTI)

    Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)

    2011-10-17T23:59:59.000Z

    We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

  5. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  6. The Shareholder Derivative Action and Good Corporate Governance in China: Why the Excitement is Actually for Nothing

    E-Print Network [OSTI]

    Zhang, Zhong

    2011-01-01T23:59:59.000Z

    Noack & Dirk Zetzsche, Corporate Governance Reform in Ger-Protection Seriously? Corporate Governance in the UnitedDonald C. Clarke, Corporate Governance in China: An Overview

  7. On the Export of U.S.-Style Corporate Fiduciary Duties to Other Cultures: Can A Transplant Take?

    E-Print Network [OSTI]

    Stout, Lynn A.

    2005-01-01T23:59:59.000Z

    able to evolve corporate governance patterns that resemble2002. How To Fix Corporate Governance, Business Week 69-78 (Cultural Theory of Corporate Governance Systems, Delaware

  8. September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer

    E-Print Network [OSTI]

    Pala, Nezih

    0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN

  9. "Enlightened Shareholder Value": Corporate Governance Beyond the Shareholder - Stakeholder Divide

    E-Print Network [OSTI]

    Harper Ho, Virginia E.

    2010-01-01T23:59:59.000Z

    Ho FINAL.docx Do Not Delete 11/15/2010 4:38 PM Enlightened Shareholder Value: Corporate Governance Beyond the Shareholder-Stakeholder Divide Virginia Harper Ho* I. INTRODUCTION... on Risk Management and Corporate Governance, Oct. 2009, for their generous comments on earlier drafts. All remaining errors are mine alone. Ho FINAL.docx Do Not Delete 11/15/2010 4:38 PM 60 The Journal of Corporation Law [Vol. 36:1 1. The Enlightened...

  10. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X

  11. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial pin multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1x N/GaN undoped QW system is coated over both

  12. High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors

    SciTech Connect (OSTI)

    Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)

    1998-11-01T23:59:59.000Z

    The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.

  13. arinc research corporation: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    examines how firm-level corporate expenditure represented by R&D, capital expenditure (CAPEX) and selling, general and administrative (SGA) costs responds to stock price...

  14. STATEMENT OF CONSIDERATIONS REQUEST BY MARTIN MARIETTA CORPORATION...

    Broader source: Energy.gov (indexed) [DOE]

    MARTIN MARIETTA CORPORATION (MMC) FORMERLY KNOWN AS GENERAL DYNAMICS - SPACE SYSTEMS DIVISION (GD- SSD) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE...

  15. Corporate Clean Energy Investment Trends in Brazil, China, India...

    Open Energy Info (EERE)

    Jump to: navigation, search Name Corporate Clean Energy Investment Trends in Brazil, China, India and South Africa AgencyCompany Organization Carbon Disclosure Project...

  16. Corn Belt Energy Corporation- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Corn Belt Energy Corporation (CBEC), in association with the Wabash Valley Power Association, provides its customers with the "Power Moves" energy efficiency rebate program. Through this program,...

  17. Microsoft Word - EM QA Corporate Board Meeting Minutes - Oct...

    Office of Environmental Management (EM)

    th Environmental Management Quality Assurance Corporate Board Meeting Minutes October 27, 2014 - Nevada Site Office Page 1 of 10 Voting Board Members in Attendance: Randy Kay -...

  18. 2008_Transition_Corporate_Overview_Book_One.pdf | Department...

    Broader source: Energy.gov (indexed) [DOE]

    2008TransitionCorporateOverviewBookOne.pdf More Documents & Publications DOE Transition Documents - 2008 DOE Organization Chart - May 2, 2014 DOE Organization Chart - October...

  19. Electric, Street Railway, and Gas Corporations (South Dakota)

    Broader source: Energy.gov [DOE]

    This legislation contains provisions pertaining to a corporation formed for the purpose of constructing, maintaining and operating a street railway or railways; generating, transmitting or...

  20. Southwest Gas Corporation- Combined Heat and Power Program

    Broader source: Energy.gov [DOE]

    Southwest Gas Corporation (SWG) offers incentives to qualifying commercial and industrial facilities who install efficient Combined Heat and Power systems (CHP). CHP systems produce localized, on...

  1. Southwest Gas Corporation- Residential and Builder Efficiency Rebate Program (Arizona)

    Broader source: Energy.gov [DOE]

    Southwest Gas Corporation (SWG) offers rebates to residential customers in Arizona who purchase and install energy efficient natural gas tankless water heaters, clothes dryers, windows, attic...

  2. Citizens Electric Corporation- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Citizens Electric Corporation offers rebates and price reductions to its residential customers for purchasing and installing energy efficient equipment. Eligible equipment and measures include a...

  3. Southwest Gas Corporation- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Southwest Gas Corporation (SWG) offers rebates to residential customers in Nevada who purchase energy efficient natural gas tankless water heaters, clothes dryers, windows and smart low-flow...

  4. EERE Partner Testimonials- Robert Gleason, Capstone Turbine Corporation

    Broader source: Energy.gov [DOE]

    Robert Gleason, Senior Vice President of Product Development for Capstone Turbine Corporation describes the benefits of a strategic partnership with the U.S. Department of Energy.

  5. azure dynamics corporation: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Coverage of Students on Medically Necessary Leave of Absence 116 Navneet Gulati Eaton Corporation, Engineering Websites Summary: autonomy to human-scale power-comparable...

  6. EERE Partner Testimonials- Darren Jamison, Capstone Turbine Corporation

    Broader source: Energy.gov [DOE]

    Darren Jamison, President and CEO of Capstone Turbine Corporation, shares his experience of partnering with the U.S. Department of Energy.

  7. Mainzer taps Gendron, Ehli to lead Power and Corporate Strategy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mainzer-taps-Gendron-Ehli-to-lead-Power-and-Corporate-Strategy Sign In About | Careers | Contact | Investors | bpa.gov Search News & Us Expand News & Us Projects & Initiatives...

  8. Preliminary Notice of Violation, Fluor Daniel Fernald Corporation...

    Broader source: Energy.gov (indexed) [DOE]

    July 29, 1997 Issued to Fluor Daniel Fernald Corporation related to Corrective Actions Implementation Deficiencies at the Fernald Environmental Management Project, (EA-97-05) On...

  9. Testimonials- Partnerships in Battery Technologies- Capstone Turbine Corporation

    Broader source: Energy.gov [DOE]

    Robert Gleason, Senior Vice President of Product Development for Capstone Turbine Corporation describes the benefits of a strategic partnership with the U.S. Department of Energy.

  10. Testimonials- Partnerships in R&D- Capstone Turbine Corporation

    Broader source: Energy.gov [DOE]

    Darren Jamison, President and CEO of Capstone Turbine Corporation, shares his experience of partnering with the U.S. Department of Energy.

  11. Microsoft Word - EM QA Corporate Board Meeting Minutes - February...

    Office of Environmental Management (EM)

    th Environmental Management Quality Assurance Corporate Board Meeting Minutes February 11, 2014 - Teleconference Page 1 of 8 Voting Board Members in Attendance: Randy Kay - Idaho...

  12. Southwest Gas Corporation- Commercial Energy Efficient Equipment Rebate Program

    Broader source: Energy.gov [DOE]

    Southwest Gas Corporation (SWG) offers rebates to commercial customers in Nevada who purchase energy efficient natural gas equipment. Eligible equipment includes clothes washers, storage water...

  13. Southwest Gas Corporation- Commercial High-Efficiency Equipment Rebate Program

    Broader source: Energy.gov [DOE]

    Southwest Gas Corporation (SWG) offers rebates to commercial customers in Arizona who purchase energy efficient natural gas equipment. Eligible equipment includes natural gas storage and tankless...

  14. Accounting for Taste: Board Member Preferences and Corporate Policy Choices

    E-Print Network [OSTI]

    Richardson, Scott

    2003-05-23T23:59:59.000Z

    This paper explores whether firms that share common directors also pursue similar corporate policies. Using a sample of 885 U.S. firms with common directors, we find ...

  15. Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates

    E-Print Network [OSTI]

    Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we

  16. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method

    E-Print Network [OSTI]

    Okamoto, Koichi

    Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized

  17. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

    E-Print Network [OSTI]

    Chung, Jinwook

    We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...

  18. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...

  19. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  20. Corporate social responsibility and its impact on the corporate decision-making process for university undergraduate research fellows

    E-Print Network [OSTI]

    Bain, Joseph E

    2013-02-22T23:59:59.000Z

    corporations can have a detrimental effect by allowing the pilfering of societal resources by greedy corporate executives. On the other hand, limited economic resources disallow the corporation to meet every demand of society without infringing on its... stakeholders are perceived to be stakeholders whom the firm depends on to operate efficiently; while, normative stakeholders possess moral claims on the firm but do not exercise a substantive influence over the firm's operations. Welcomer (2002) argues, "the...

  1. Chapter 2Chapter 2 A Complete CorporateA Complete Corporate

    E-Print Network [OSTI]

    Schubart, Christoph

    average cost of capital (WACC) Estimate expected future free cash flows (FCF)(FCF) Find value of company investors called the weightedinvestors--called the weighted average cost of capital (WACC) DES Chapter 2 13 #12;Steps in the corporate value model Determine weighted average cost of capitalDetermine weighted

  2. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21T23:59:59.000Z

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN strain-balanced multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the green gap..

  3. High current gain InGaN=GaN HBTs with C operating temperature

    E-Print Network [OSTI]

    Asbeck, Peter M.

    with an $20 nm low-temperature (Tg 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cm3 Buffer GaN 2.5 mm Substrate Sapphire HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung

  4. Developing a Corporate Water Management Strategy

    E-Print Network [OSTI]

    Tutterow, V.

    2015-01-01T23:59:59.000Z

    stream_source_info ESL-IE-15-06-22.pdf.txt stream_content_type text/plain stream_size 21539 Content-Encoding UTF-8 stream_name ESL-IE-15-06-22.pdf.txt Content-Type text/plain; charset=UTF-8 Developing a Corporate Water... Management Strategy Vestal Tutterow Senior Technical Consultant Jackson Stubbs Senior Analyst Project Performance Company McLean, VA Eoin ODriscoll, PhD Energy Analyst ABSTRACT Industrial facilities universally rely on water as a raw...

  5. Special features of corporation accounting in Texas

    E-Print Network [OSTI]

    Davis, Garnett Stant

    1943-01-01T23:59:59.000Z

    ') Excess of Depletion Reserve over Leasehold Costs. The analysis of changes in taxable capital consists of a combined income and surplus statement, together with any additions or deductions from capital stock that may have taken place withLn the year... Forfeited Stock To record forfeitup of stock and previous payments. 500. 00 200i00 500. 00 200. 00 300. 00 200 00 tchell v. Porter, Tex. Civ. App. , 223 S. S. 1/7. Hildebrand, Texas Corporations, Vol. 1, p. 111. Broad, Some Comments on Surplus...

  6. First Gen Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualPropertyd8c-a9ae-f8521cbb8489 NoEuropeStrat.pdfInactive Jump to:FinnishFireballGen Corporation

  7. Corporate Culture | National Nuclear Security Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisitingContract Management Fermi Site Office (FSO)Corporate Culture | National

  8. Corporate Fellows Council | ornl.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisitingContract Management Fermi Site Office (FSO)Corporate Culture |

  9. Environmental Credit Corporation ECC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluating A PotentialJump to:EmminolEntergy ArkansasEnvironmental Credit Corporation

  10. GainSpan Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluating A PotentialJumpGermanFifeGEXA Corp. (New Jersey)GainSpan Corporation Jump to:

  11. Corporate Operating Experience Program | Department of Energy

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613PortsmouthBartlesvilleAbout » Contact Us ContactPractices in IndianDebate thCorporate

  12. Wanxiang America Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown ofNationwide Permit webpageWalthall County,Wanxiang America Corporation Jump

  13. China Technology Development Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, click here.TelluricPower International New Energy Holding Ltd Place:Corporation

  14. Sierra Energy Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt LtdShawangunk, New York:SiG Solar GmbH Jump to:Sierra Energy Corporation Place:

  15. Fastcap Systems Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazelPennsylvania: EnergyExolisFairway,FarmersFastcap Systems Corporation Jump

  16. Wisconsin Energy Conservation Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcat 1 Wind Project Jump to:WilsonIIaEnergy Conservation Corporation

  17. LANL named 2010 top corporate volunteer organization

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated Codes |Is Your Home as ReadyAppointedKyungmin2010 top corporate volunteer

  18. NewPage Corporation | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO2:Introduction toManagement ofConverDynNet-ZeroNew Wave Power ProjectTomNewPage Corporation

  19. Project Resources Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation,Pillar Group BV Jump to: navigation,PowerInformationOpenProeInyoCorporation

  20. Iosil Energy Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtelInterias Solar Energy Jump to:IESIntervalIosil Energy Corporation Jump

  1. IST Energy Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, search OpenEIHesperia,IDGWP Wind Farm Jump to:ILab IncubatorISE Corporation

  2. Hy9 Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtel JumpCounty, Texas: EnergyHy9 Corporation Jump to: navigation, search

  3. Corporate Tax Credit | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof EnergyInnovationinConcentratingEnergyCoosa Valley ElectricCornwall LightCorporate

  4. StarSolar Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt LtdShawangunk,SoutheastSt. Francis(Redirected fromStarSolar Corporation Jump

  5. Corporate International Operations | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew|Core Analysis At Geysers|Cornwall,CorporateInternational

  6. Covanta Holding Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew|Core AnalysisCouncil, Idaho: EnergyCovantaIncCorporation

  7. Sumco Techxiv Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with formSoutheastern IL ElecStrategicStories HomeSumco Techxiv Corporation Jump

  8. Apollo Energy Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcatAntrim County, Michigan: EnergySalient of Normal FaultCorporation

  9. ArchRock Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcatAntrim County,Delhi (NCT),Arborview CapitalArchRock Corporation

  10. ClimeCo Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty EditCalifornia:PowerCER.png El CER esDatasetCityFund JumpClimeCo Corporation Jump to:

  11. BioJet Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomass ConversionsSouth Carolina:EnergyPark,BioJet Corporation Jump to: navigation,

  12. Ruihao Corporation Group | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to:Roscommon County,Vermont: Energy ResourcesRuihao Corporation Group

  13. Ruihua Construction Corporation RHC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to:Roscommon County,Vermont: Energy ResourcesRuihao Corporation

  14. Arrowhead Research Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof EnergyInnovation in Carbon Capture andsoftware andSolarResearch Corporation Place:

  15. Tax Savings as a Provision of Corporate Welfare is a State-Corporate Crime When it Becomes Socially Injurious

    E-Print Network [OSTI]

    Nery, Annebelle

    2010-01-01T23:59:59.000Z

    From their definition and further research, the theory wasTraditional Definitions of Crime Criminology Theory: Theintegrated theory of state corporate crime, definitions of

  16. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  17. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  18. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  19. Software & Services Group Developer Products Division Copyright 2011, Intel Corporation. All rights reserved.

    E-Print Network [OSTI]

    California at Berkeley, University of

    Software & Services Group Developer Products Division Copyright 2011, Intel Corporation. All & Services Group Developer Products Division Copyright 2011, Intel Corporation. All rights reserved. *Other Division Copyright 2011, Intel Corporation. All rights reserved. *Other brands and names are the property

  20. Dead Hand and No Hand Pills: Precommitment Strategies in Corporate Law

    E-Print Network [OSTI]

    Bainbridge, Stephen M

    2003-01-01T23:59:59.000Z

    Decisionmaking in Corporate Governance, 55 V AND . L. R EV .Dooley, Two Models of Corporate Governance, 47 B US . L AW .resurgence of the corporate governance issues that dominated

  1. The Shareholder As Ulysses: Some Empirical Evidence on Why Investors in Public Corporations Tolerate Board Governance

    E-Print Network [OSTI]

    Stout, Lynn A.

    2003-01-01T23:59:59.000Z

    default rules of corporate governance at all, they almostThe Means and Ends of Corporate Governance, 97 N W . U. L. Rof the way modern corporate governance actually works. In

  2. Anglo-American Corporate Taxation: Tracing the Common Roots of Divergent Approaches

    E-Print Network [OSTI]

    Bank, Steven A.

    2013-01-01T23:59:59.000Z

    History and the Global Corporate Governance Revolution: Thelength structure of corporate governance, the U.K. continuedarms-length form of corporate governance in the U.K. was

  3. Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

    SciTech Connect (OSTI)

    Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru; Mushnikov, Nikolai V., E-mail: kleinerman@imp.uran.ru; Stashkova, Liudmila A., E-mail: kleinerman@imp.uran.ru [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)

    2014-10-27T23:59:59.000Z

    Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mssbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mssbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)

  4. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  5. Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots

    E-Print Network [OSTI]

    Fonoberov, Vladimir

    Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.18 Molecu- lar beam epitaxial growth in the StranskiKrastanov mode of wurtzite WZ Ga

  6. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    E-Print Network [OSTI]

    Feenstra, Randall

    Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP

  7. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have

  8. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates

    E-Print Network [OSTI]

    Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.20.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication

  9. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  10. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C

  11. High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop

    E-Print Network [OSTI]

    Itoh, Tatsuo

    High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies

  12. Abstract,,,Abstract,,,Abstract,,,Abstract,,, This study is concerned to look into the topic of the competent authority to decide the validity of the membership of the House of Representatives in the Hashemite kingdom of

    E-Print Network [OSTI]

    of the competent authority to decide the validity of the membership of the House of Representatives, the search in the legal jurisdiction of the membership in House of Representatives need to re of Representatives is a litigant or party in this dispute. #12;

  13. Aurora Organic Dairy Phase III: Corporate Sustainability Report

    E-Print Network [OSTI]

    Edwards, Paul N.

    Aurora Organic Dairy Phase III: Corporate Sustainability Report Rosemary Lapka, Neesha Modi, Lauren Start and David Weinglass Report No. CSS11-07 April 19, 2011 #12;Aurora Organic Dairy Phase III Keoleian, Professor #12;Document Description AURORA ORGANIC DAIRY PHASE III: CORPORATE SUSTAINABILITY

  14. Industrial Engineering 361 Six Sigma Making Corporations and

    E-Print Network [OSTI]

    Vardeman, Stephen B.

    Industrial Engineering 361 Six Sigma ­ Making Corporations and Stockholders... Kim Knuth Grant in the late 1980's. The term "Six Sigma" came to identify a popular form of corporate improvement://www.public.iastate.edu/~vardeman/stat531/sixsigma.pdf). Before we began research, we questioned the importance of Six Sigma and were

  15. The Earth Institute I Corporate Circle Spring 2011

    E-Print Network [OSTI]

    Khatiwala, Samar

    ,000 in unrestricted support, to be renewed once a year Support the on-going sustainable development work on strategic plans, metrics, operations as relates to energy, water, sustainable food systems, etc. Corporate #12;The Earth Institute I Corporate Circle Indicative examples Global: PepsiCo: water & energy

  16. Classifying Web content for a corporate digital library Ian Thurlow

    E-Print Network [OSTI]

    Haddadi, Hamed

    Classifying Web content for a corporate digital library Ian Thurlow BT Abstract: The integration of relevant Web content into corporate digital libraries is expected to be of significant benefit when tools. The integration of Web content into a digital library, however, raises some concerns with regard

  17. Nolij Corporation Proprietary & Confidential Information Release Notes for Nolij Web

    E-Print Network [OSTI]

    Escher, Christine

    Nolij Corporation Proprietary & Confidential Information Release Notes for Nolij Web Release 6.3.x Web Release 6.3.x Copyright 2010 - 2011, Nolij Corporation. All rights reserved. Revised 02Release Notes for Nolij Web Release 6.3.x Introduction These release notes provide information about new

  18. Copyright 1997 by Rational Software Corporation Analysis and Design

    E-Print Network [OSTI]

    Mylopoulos, John

    Page 1 Copyright © 1997 by Rational Software Corporation Analysis and Design with UML Page 2 Copyright © 1997 by Rational Software Corporation Agenda n Benefits of Visual Modeling n History of the UML n Visual Modeling with UML n The Rational Iterative Development Process #12;Page 3 Copyright © 1997

  19. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)

    2014-08-11T23:59:59.000Z

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  20. Michael J. Poston Atlanta, GA 30307

    E-Print Network [OSTI]

    Orlando, Thomas

    Page | 1 Michael J. Poston Atlanta, GA 30307 Michael.Poston@gatech.edu Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J

  1. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

    E-Print Network [OSTI]

    Peale, Robert E.

    of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored

  2. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  3. Corporate governance reform in a developing country : the case of Bangladesh

    E-Print Network [OSTI]

    Sobhan, Md. Abdus

    2014-07-02T23:59:59.000Z

    Bangladesh reformed its corporate governance by adopting Bangladesh Corporate Governance Guidelines-2006 (the BCGG-2006 hereafter) due to pressures from international financial institutions (IFIs). However, there is huge ...

  4. IS THE TAIL WAGGING THE DOG? AN EMPIRICAL ANALYSIS OF CORPORATE CARBON FOOTPRINTS AND FINANCIAL PERFORMANCE

    E-Print Network [OSTI]

    Delmas, Magali A; Nairn-Birch, Nicholas S.

    2011-01-01T23:59:59.000Z

    The importance of carbon footprint estimation boundaries.ANALYSIS OF CORPORATE CARBON FOOTPRINTS AND FINANCIALANALYSIS OF CORPORATE CARBON FOOTPRINTS AND FINANCIAL

  5. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

    2014-05-05T23:59:59.000Z

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  6. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency

  7. 12/2/08 11:41 AMOpen Membership -Rise of College Club Teams Creates a Whole New Level of Success -NYTimes.com Page 1 of 5http://www.nytimes.com/2008/12/02/sports/02club.html?_r=1&th=&emc=th&pagewanted=print

    E-Print Network [OSTI]

    Bradley, Elizabeth

    12/2/08 11:41 AMOpen Membership - Rise of College Club Teams Creates a Whole New Level of Success Membership - Rise of College Club Teams Creates a Whole New Level of Success - NYTimes.com Page 2 of 5http=&emc=th&pagewanted=print Open Membership Playing for the Love of the Sport December 2, 2008 OPEN MEMBERSHIP Rise of College Club

  8. The effect of a corporate name change related to a change in corporate image upon a firm's stock price

    E-Print Network [OSTI]

    DeFanti, Mark P.

    2009-06-02T23:59:59.000Z

    primary research questions. First, what is the effect of a CNC related to a change in corporate image, as opposed to a change in corporate entity (e.g., acquisition), on a firms stock price? Second, what is the effect of a major change versus a minor...

  9. Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.

    1985-03-01T23:59:59.000Z

    Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

  10. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  11. AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh

    E-Print Network [OSTI]

    Itoh, Tatsuo

    AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: ykchung@ee.ucla.edu Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d

  12. Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    1999-01-01T23:59:59.000Z

    Microcalorimetric measurements of small absorption coefficients have been performed on thin GaNAlGaN quantum wells in GaNAlGaN quantum wells Axel Goldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily

  13. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors

  14. Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

    SciTech Connect (OSTI)

    Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others

    1995-12-31T23:59:59.000Z

    This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.

  15. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  16. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

    E-Print Network [OSTI]

    in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using

  17. High-efficiency radiation-resistant InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)

    1997-12-31T23:59:59.000Z

    A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.

  18. North American Reciprocal Museum List Members from the de Saisset Museum, who present a membership card validated with a gold North American Reciprocal

    E-Print Network [OSTI]

    Schwarz, Thomas

    North American Reciprocal Museum List Members from the de Saisset Museum, who present a membership at participating museums: Free/member admission during regular museum hours, member discounts at museum shops, and discounts. on concert/lecture tickets. Please note: Some museums restrict benefits. Please see notes

  19. Journal of Machine Learning Research 9 (2008) 1823-1856 Submitted 5/07; Revised 6/08; Published 8/08 Mixed Membership Stochastic Blockmodels

    E-Print Network [OSTI]

    Blei, David M.

    2008-01-01T23:59:59.000Z

    /08 Mixed Membership Stochastic Blockmodels Edoardo M. Airoldi EAIROLDI@PRINCETON.EDU David M. Blei BLEI Genomics. . Also in the School of Computer Science. c 2008 Edoardo M. Airoldi, David M. Blei, Stephen E. Fienberg and Eric P. Xing. #12;AIROLDI, BLEI, FIENBERG AND XING from individual objects, relational data

  20. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  1. Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with 1210InGaN//1210GaN and 0001InGaN//0001GaN epitaxial

  2. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  3. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: jhtsai@nknucc.nknu.edu.tw; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)

    2009-07-15T23:59:59.000Z

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  4. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  5. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  6. InGaN/GaN single-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2012-06-11T23:59:59.000Z

    We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

  7. Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona

    E-Print Network [OSTI]

    Anderson, Timothy J.

    be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP

  8. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  9. AlGaN/GaN field effect transistors for power electronicsEffect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  10. Comment submitted by Whirlpool Corporation regarding the Energy Star Verification Testing Program

    Broader source: Energy.gov [DOE]

    This document is a comment submitted by Whirlpool Corporation regarding the Energy Star Verification Testing Program

  11. QER- Comment of GenConn Energy on behalf of UIL Holdings Corporation

    Broader source: Energy.gov [DOE]

    Provided are comments of UIL Holdings Corporation on New England Regional Infrastructure Constraints.

  12. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  13. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  14. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  15. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  16. Over 30{percent} efficient InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)

    1997-01-01T23:59:59.000Z

    A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}

  17. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  18. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  19. STATEMENT OF CONSIDERATIONS REQUEST BY ABENGOA BIOENERGY CORPORATION...

    Broader source: Energy.gov (indexed) [DOE]

    ABENGOA BIOENERGY CORPORATION FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER A DOE COOPERATIVE AGREEMENT INITIALLY IDENTIFIED AS GOV WORKS NO. 04-03- CA-79759...

  20. Information Environment and the Investment Decisions of Multinational Corporations

    E-Print Network [OSTI]

    Shroff, Nemit

    This paper examines how the external information environment in which foreign subsidiaries operate affects the investment decisions of multinational corporations (MNCs). We hypothesize and find that the investment decisions ...

  1. Creating an incentive for investor intermediaries to improve corporate governance

    E-Print Network [OSTI]

    Gershkowitz, Todd M

    2006-01-01T23:59:59.000Z

    At the end of the 1980s, there was some speculation that leveraged buyouts (LBOs) would lead to the demise of the public company in favor of privately owned companies after a decade of the market for corporate control ...

  2. Corporate Governance & The UK Split Capital Investment Trust Crisis

    E-Print Network [OSTI]

    Adams, Andrew T; Angus, Robin

    2005-01-01T23:59:59.000Z

    of corporate governance issues. This paper draws on the results of a survey of investment trust directors and other investment professionals connected with the investment trust industry to examine the lessons to be learned from the crisis. The regulatory...

  3. Board independence and corporate governance: evidence from director resignations

    E-Print Network [OSTI]

    Gupta, Manu

    2005-08-29T23:59:59.000Z

    As evident from recent changes in NYSE and Nasdaq listing requirements, board independence is considered an important constituent of firms?? corporate governance structures. However, the empirical evidence regarding the impact of board structure...

  4. Corporate governance and long-term stock returns

    E-Print Network [OSTI]

    Moorman, Theodore Clark

    2005-08-29T23:59:59.000Z

    Extant literature finds that long-term abnormal stock returns are generated by a strategy based on corporate governance index values (Gompers, Ishii, and Metrick 2003). The result is inconsistent with efficient markets and suggests that information...

  5. Buildings and corporate strategy : towards a management system model

    E-Print Network [OSTI]

    Brana, Rodrigo

    1985-01-01T23:59:59.000Z

    This thesis focuses on buildings as a subject of attention and inquiry in a corporate setting. It attempts to draw implications for the design of a management system to deal with the special nature of buildings as a resource. ...

  6. LEE-0153- In the Matter of Martin Petroleum Corporation

    Broader source: Energy.gov [DOE]

    On August 17, 1994, Martin Petroleum Corporation (Martin) of Ft. Lauderdale, Florida, filed an Application for Exception with the Office of Hearings and Appeals of the Department of Energy. In its...

  7. Hindawi Publishing Corporation Science and Technology of Nuclear Installations

    E-Print Network [OSTI]

    Demazire, Christophe

    Hindawi Publishing Corporation Science and Technology of Nuclear Installations Volume 2013, Article Department of Nuclear Chemistry, Chalmers University of Technology, 412 96 Gothenburg, Sweden 2 Department of Nuclear Engineering, Chalmers University of Technology, 412 96 Gothenburg, Sweden Correspondence should

  8. Uncertain Growth Cycles, Corporate Investment, and Dynamic Hedging

    E-Print Network [OSTI]

    Yonce, Adam

    2010-01-01T23:59:59.000Z

    Chowdhry. Resources, real options, and corporate strategy.not exist in standard real option models: When invest- mentIn the theory of real options, uncertainty plays a crucial

  9. Corporate budgeting In practice : driving strategic focus and performance

    E-Print Network [OSTI]

    Briggman, Chandra A. (Chandra Alisa)

    2014-01-01T23:59:59.000Z

    This paper identifies insights and methods used in practice to address two weaknesses in the traditional corporate budgeting process. One point of failure is the weak linkage between organizational strategy and budgeting ...

  10. VBZ-0028- In the Matter of Sandia Corporation

    Broader source: Energy.gov [DOE]

    This decision considers a Motion to Dismiss filed by the Sandia Corporation (Sandia) on August 24, 1999. In its Motion, Sandia seeks judgment on the record of Complaint filed by Dr. Jiunn Yu (Yu)...

  11. STATEMENT OF CONSIDERATIONS REQUEST BY EATON CORPORATION FOR...

    Broader source: Energy.gov (indexed) [DOE]

    EATON CORPORATION FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC26-04NT42263; W(A)-04-074, CH-1252 The Petitioner, Eaton...

  12. REQUEST BY EATON CORPORATION FOR AN ADVANCE WAIVER OF DOMESTIC...

    Broader source: Energy.gov (indexed) [DOE]

    DOE CONTRACT NO. DE-AC05-840R21400; DOE WAIVER DOCKET W(A)-94-011 ORO-578 The Eaton Corporation (Eaton) has made a timely request for an advance waiver to worldwide...

  13. STATEMENT OF CONSIDERATIONS REQUEST BY EATON CORPORATION FOR...

    Broader source: Energy.gov (indexed) [DOE]

    EATON CORPORATION FOR AN ADVANCE WAIVER OF PATENT RIGHTS UNDER SUBCONTRACT NO. NREL-ZCL-2-32060-01 ENTITLED "ADVANCED HEAVY HYBRID PROPULSION SYSTEMS FOR INCREASE FUEL EFFICIENCY...

  14. REQUEST BY EATON CORPORATION FOR ADVANCE WAIVER OF DOMESTIC AND...

    Broader source: Energy.gov (indexed) [DOE]

    AND OPERATING CONTRACT NO. DE-AC05-840R21400; DOE WAIVER DOCKET W(A)-93-003 0RO-548 Eaton Corporation (Eaton) has made a timely request for an advance waiver to worldwide...

  15. UNDERSTANDING POSTAL PRIVATIZATION: CORPORATIONS, UNIONS AND "THE PUBLIC INTEREST"

    E-Print Network [OSTI]

    1 UNDERSTANDING POSTAL PRIVATIZATION: CORPORATIONS, UNIONS AND "THE PUBLIC INTEREST" BY SARAH F Relations Written under the direction of Professor Adrienne Eaton and approved by ___________[Jeffrey Keefe]_____________ ____________[Dorothy Sue Cobble]____________ ____________[Adrienne Eaton]_____________ New Brunswick, New Jersey

  16. STATEMENT OF CONSIDERATIONS REQUEST BY EATON CORPORATION FOR...

    Broader source: Energy.gov (indexed) [DOE]

    FR IPL DOE CH 630 252 2779 TO RGCP-HO P.02-03 * * STATEMENT OF CONSIDERATIONS REQUEST BY EATON CORPORATION FOR AN ADVANCE WAIVER OF PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT...

  17. Essays on banking and corporate finance in developing countries

    E-Print Network [OSTI]

    Gormley, Todd A

    2006-01-01T23:59:59.000Z

    This dissertation consists of three essays that examine banking and corporate finance in developing countries. Specifically, it explores the theoretical and empirical implications of open capital markets, foreign bank ...

  18. THREE ESSAYS ON MONITORING OF FINANCIAL REPORTING BY CORPORATE DIRECTORS

    E-Print Network [OSTI]

    Xu, Yang

    2012-08-31T23:59:59.000Z

    Recent high-profile financial scandals and increasing instances of restatements focus public attention on the role of audit committees, auditors and CFOs in maintaining the integrity and quality of corporate financial ...

  19. Corporate serial acquisitions: An empirical test of the learning hypothesis

    E-Print Network [OSTI]

    Nesterov, Yurii

    2007/23 Corporate serial acquisitions: An empirical test of the learning hypothesis Nihat Aktas: An empirical test of the learning hypothesis Nihat AKTAS1, Eric DE BODT2 and Richard ROLL3 March2007 Abstract

  20. Logistics barriers for multinational corporations doing business in China

    E-Print Network [OSTI]

    Luo, Manqin, 1976-

    2004-01-01T23:59:59.000Z

    With rapid economic growth, China attracts many multinational corporations (MNCs) as a manufacturing center with both its cheap labor cost and a huge consumer market. While doing business in China, most MNCs have faced ...

  1. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    with the active thermoelectric cooling implemented on the same material system can improve the device performance, for the pro- posed cooling system should also be based on GaN. To real- ize this, the high-efficiency Ga,6 Great progress has been achieved in GaN-based microwave technology. GaN transistors with very high

  2. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01T23:59:59.000Z

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  3. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 1. Introduction, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimization based

  4. InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

  5. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer K.M. Groom, B fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement-doped InGaP current blocking layer that also provides optical confinement. This tech- nology relies

  6. GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization

    E-Print Network [OSTI]

    Wetzel, Christian M.

    GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical 12180-3590, U.S.A. ABSTRACT The wide bandgap polar semiconductors GaN and ZnO and their related alloys fields, and surface terminations. With a small lattice mismatch of ~1.8 % between GaN and Zn

  7. Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

    E-Print Network [OSTI]

    Nabben, Reinhard

    Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates: time-resolved photoluminescence, quantum dots, InGaN, Si substrate There exists a strong continuous expensive and are limited in size. Thus, heteroepitaxial growth of GaN on silicon substrates seems

  8. Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    -emitting diodes LEDs on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate an ideal substrate for homoepitaxial growth. Here we study the microstructural properties of green GaInN/GaN-Koehler force10 resulting from a macroscopic relaxation of strain. II. CRYSTAL GROWTH c plane bulk GaN substrate

  9. Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire of GaN-based blue and green LEDs grown on sapphire and GaN substrates using micro-Raman spectroscopy

  10. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

    E-Print Network [OSTI]

    Nabben, Reinhard

    . The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate-grown heterostructures can drastically be reduced by using a template of MOVPE-GaN on the sapphire substrate, which leadsCorrelation between structural properties and optical amplification in InGaN/GaN heterostructures

  11. Corporate governance under stress : an institutional perspective on the transformation of corporate governance in France and Germany

    E-Print Network [OSTI]

    Goyer, Michel, 1964-

    2004-01-01T23:59:59.000Z

    This work contributes to the study of comparative political economy by examining the impact of financial deregulation on corporate governance in the two main continental European economies, France and Germany. It investigates ...

  12. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04T23:59:59.000Z

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  13. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

    SciTech Connect (OSTI)

    Mezdrogina, M. M., E-mail: Margaret.M@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kozhanova, Yu. V. [St. Petersburg State Polytechnical University (Russian Federation)

    2013-04-15T23:59:59.000Z

    Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu{sup 3+} and Sm{sup 3+}. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>10{sup 23} photons cm{sup -2} s{sup -1}) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

  14. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    on metamorphic growth of InGaP layers on GaP substrates, astemperature amber photoluminescence from InGaP QWs, grownon a metamorphic InGaP layer. References: Fred Shubert E. ,

  15. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06T23:59:59.000Z

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  16. ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures Duc-Phuong Nguyen, France We show that the large band offsets between GaN and InN and the heavy carrier effec- tive masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga1-xInxN/GaN

  17. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS Omkar Jani1 with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN.4 eV. InGaN has the appropriate optical properties and has been well demonstrated for light

  18. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

    E-Print Network [OSTI]

    Boyer, Edmond

    AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD R. Meunier1 , A, 38054 Grenoble Cedex 9, France 2 LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France AlGaN /GaN behavior. Those trapped charges can be associated to the carbon contamination of the AlGaN surface

  19. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

    E-Print Network [OSTI]

    Bowers, John

    Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth S for publication 5 January 1999 The emission mechanisms of bulk GaN and InGaN quantum wells QWs were studied suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN

  20. Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

    E-Print Network [OSTI]

    Boyer, Edmond

    , transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compareComparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities SAs and GaN microcavities. PACS numbers: 78.67.-n, 71.36.+c, 78.20.Ci, 78.55.Cr, 78.55.Et Keywords: polariton

  1. Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells

    E-Print Network [OSTI]

    As, Donat Josef

    molecular beam epitaxy on free standing 3C-SiC 001 substrates. During growth of Al0.15Ga0.85N/GaN quantum growth of the quantum structures an 800 nm thick GaN buffer layer was deposited on the 3C-SiC substrate. The buffer and the c-AlGaN/GaN quantum wells were grown at a substrate temperature of 720 C. The layers were

  2. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    SciTech Connect (OSTI)

    Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2005-12-19T23:59:59.000Z

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  3. AlGaN/GaN HEMT With 300-GHz fmax

    E-Print Network [OSTI]

    Chung, Jinwook W.

    We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage ...

  4. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

    E-Print Network [OSTI]

    Piner, Edwin L.

    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...

  5. High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

    E-Print Network [OSTI]

    Hartono, Haryono

    The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...

  6. Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

  7. Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques

    SciTech Connect (OSTI)

    Devaraju, G.; Sathish, N.; Pathak, A. P. [School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India); Dhamodaran, S. [Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India); Gaca, J.; Wojcik, M. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw (Poland); Arora, B. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2009-03-10T23:59:59.000Z

    Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.

  8. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [LNESS and Dipartimento di Scienza dei Materiali, Universit di Milano Bicocca, Via Cozzi 55, I20125 Milano (Italy); Fedorov, Alexey [LNESS and CNRIFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nanodisks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.310.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(2.11) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III adatoms on IIIV crystal surfaces and the fabrication of designable nanostructures.

  9. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  10. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  11. Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian Kindel, Sven Rodt, Andr Strittmatter et al.

    E-Print Network [OSTI]

    Nabben, Reinhard

    Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko,a Gerald Hnig, Christian Kindel, Sven

  12. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu et al.

    E-Print Network [OSTI]

    Gilchrist, James F.

    Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r- sapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple

  13. Quantum confinement in GaP nanoclusters

    SciTech Connect (OSTI)

    Laurich, B.K.; Smith, D.C.; Healy, M.D.

    1994-06-01T23:59:59.000Z

    We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

  14. Korea's Newly Enacted Unified Bankruptcy Act: The Role of the New Act in Facilitating (or Discouraging) the Transfer of Corporate Control

    E-Print Network [OSTI]

    Ko, Haksoo

    2007-01-01T23:59:59.000Z

    perspective of corporate governance, the decision whether toefforts to implement corporate governance reforms and otherthe weakness of the corporate governance mechanism in Korea,

  15. U. S. forms uranium enrichment corporation

    SciTech Connect (OSTI)

    Seltzer, R.

    1993-07-12T23:59:59.000Z

    After almost 40 years of operation, the federal government is withdrawing from the uranium enrichment business. On July 1, the Department of Energy turned over to a new government-owned entity--the US Enrichment Corp. (USEC)--both the DOE enrichment plants at Paducah, Ky., and Portsmouth, Ohio, and domestic and international marketing of enriched uranium from them. Pushed by the inability of DOE's enrichment operations to meet foreign competition, Congress established USEC under the National Energy Policy Act of 1992, envisioning the new corporation as the first step to full privatization. With gross revenues of $1.5 billion in fiscal 1992, USEC would rank 275th on the Fortune 500 list of top US companies. USEC will lease from DOE the Paducah and Portsmouth facilities, built in the early 1950s, which use the gaseous diffusion process for uranium enrichment. USEC's stock is held by the US Treasury, to which it will pay annual dividends. Martin Marietta Energy Systems, which has operated Paducah since 1984 and Portsmouth since 1986 for DOE, will continue to operate both plants for USEC. Closing one of the two facilities will be studied, especially in light of a 40% world surplus of capacity over demand. USEC also will consider other nuclear-fuel-related ventures. USEC will produce only low-enriched uranium, not weapons-grade material. Indeed, USEC will implement a contract now being completed under which the US will purchase weapons-grade uranium from dismantled Russian nuclear weapons and convert it into low-enriched uranium for power reactor fuel.

  16. --ibm corporate responsibility report--The IBM Corporate Responsibility Report represents the information reported in various categories on IBM's Corporate Responsibility Web site.

    E-Print Network [OSTI]

    Thomas, Harvard Business School The Future of Work: an interview with Thomas Malone, MIT Sloan School Corporate Governance · Leadership · External Audits Management System · Objectives · Business Conduct Guidelines · Policies · Internal Audits · Personal Business Commitments Relationships · Business Partners

  17. UID-GaN doping1016 cm-3 2 m 5 m2 m

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    2 m Drain Silicon UID-GaN doping1016 cm-3 1.1 m 2 m GateSource 2 m 5 m2 m AirAir Al0.25GaN doping1015 cm-3 30 nm Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Drain Silicon UID-GaN GateSource AirAir AlxGaN Gate (a) (b) (c) Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Gate (d) P-GaN P-GaN 30

  18. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect (OSTI)

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

    2013-05-28T23:59:59.000Z

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  19. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    SciTech Connect (OSTI)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01T23:59:59.000Z

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  20. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.