National Library of Energy BETA

Sample records for member corp ga

  1. Randolph Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/WaterEnergy Marketing CorpMember Corp Jump to: navigation,

  2. Sumter Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc JumpHeter BatterySolarfinMarketMember Corp Jump to: navigation, search Name:

  3. Halifax Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA JumpDuimen River Power Co LtdGuntherGreen PowerHipooIAEAMember Corp

  4. Jackson Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervar Hydro Jump to: navigation,Jump to:CorpJackson Electric

  5. Walton Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin,Village ofWaialua,Wallington, NewVermont: EnergyElectric Member

  6. Cumberland Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)|Alabama:Crofton,Developing andKentucky:Virginia:Elec Member

  7. United Rural Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (Utility Company) JumpGTZ ClimateFeed Jump to:Foods Jump to:Member Corp

  8. Cape Hatteras Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,Cammack Village, Arkansas: EnergyCounty,NewHatteras Elec Member Corp Jump

  9. Corps Improvement 

    E-Print Network [OSTI]

    Wythe, Kathy

    2007-01-01

    to mitigate environmental impacts of the proj- ect. The Corps? Fort Worth District and the City of Dallas are using an innovative approach to return floodplain value to the Trinity River, while improving flood damage reduction. Big Fossil Creek Watershed... flood damage; improve navigation channels and harbors; protect wetlands; and preserve, safeguard and enhance the environment. The Corps has been involved in the Trinity River Basin for more than 50 years, but the impetus for the current projects...

  10. Self-Stabilizing, Integrated, Hysteretic Boost DCDC Converter N. KESKAR, Student Member, IEEE, and G.A. RINCN-MORA, Senior Member, IEEE

    E-Print Network [OSTI]

    Rincon-Mora, Gabriel A.

    Self-Stabilizing, Integrated, Hysteretic Boost DC­DC Converter N. KESKAR, Student Member, IEEE to boost converters. This paper proposes a novel technique to harness voltage-mode hysteretic control in boost converters by controlling inductor current and output voltage through separate loops. The proposed

  11. Upson Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin, New York:Power CompanyCROSS-VALIDATIONSt.West

  12. Gibson Electric Members Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable UrbanKentucky:BoreOpen EnergyGermencikWorld Bank

  13. Excelsior Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH JumpEllenville,PowerEvaporative Coolers JumpinUSFS Preliminary

  14. Roanoke Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/ColoradoRemsenburg-Speonk, New York:Virginia:Riva,Maryland:City County, Virginia:Roanoke

  15. Brunswick Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC JumpBiossence

  16. Midwest Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to: navigation,Mereg GmbH Jump to:EC-LEDSMidAmerican EnergyMidvaleMidwest

  17. Mitchell Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to: navigation,Mereg GmbH JumpLLC JumpMissouri Ethanol LLC

  18. Oconee Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg, Oregon:OGE Energy Resources,

  19. Pataula Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg,Energy LLC Jump to:3 ofAltos del Voltoya SAPassive Solar

  20. Piedmont Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg,Energy LLC JumpPhono Solar Jump to:Information

  1. Planters Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg,Energy LLC JumpPhono Solar JumpMaunaPionics CoPlanETPlanters

  2. Hart Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA JumpDuimen River Power Co LtdGuntherGreensHareonYork: EnergyElectric

  3. Haywood Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA JumpDuimen River Power CoHawaii/Incentives < Hawaii

  4. Jefferson Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervar Hydro Jump to: navigation,JumpIAEAPvt Ltd JAPL

  5. Rutherford Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg,EnergyEast JumpInformationstandards

  6. Tideland Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc JumpHeterInformation Policy andInstituteTedaTianquanTide Technocrats

  7. Valley Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (Utility Company) JumpGTZUtility Rates API VersionVadiumNevada) JumpValley

  8. Albemarle Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAand DaltonSolarOpen5 -Telephone Co Jump to:ElecVirginia: Energy

  9. Amicalola Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAand DaltonSolarOpen5AllEnergyAmeriPowerLaboratory JumpAmherstOhio:

  10. Canoochee Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,Cammack Village, Arkansas: EnergyCounty, Tennessee: EnergyCanoochee

  11. Carroll Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,Cammack Village, Arkansas:Fund forCarnegieIndiana:NewCarroll Electric

  12. Coastal Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company) JumpIowa: Energy ResourcesCreek, Colorado:150-ICElectric

  13. Cumberland Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)|Alabama:Crofton,Developing andKentucky:Virginia:

  14. Altamaha Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowaWisconsin: EnergyYork Jump to: navigation, searchAlpena,II (Vestas)IV

  15. Walton Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (Utility Company)Idaho)Vossloh Kiepe Jump to:WKVWallenbornWallulaJump

  16. Washington Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (Utility Company)Idaho)Vossloh Kiepe JumpWarana Group ofDC Home LinkedElec

  17. Ocmulgee Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to:Information 3rd|Northfork ElectricName01988) |Oceano,

  18. 2013 AmeriCorps Summer Associate

    E-Print Network [OSTI]

    Almor, Amit

    designed specifically to fight poverty. Founded as Volunteers in Service to America in 1965 against poverty in America. Today, 6,500 AmeriCorps*VISTA members serve on over 1,000 projects throughout · Identify local poverty-related community needs · Facilitate programs that impact low-income populations

  19. Environment US Army Corps

    E-Print Network [OSTI]

    US Army Corps of Engineers

    competency in energy and sustainability across the Corps of Engineers initially and eventually with all its military customers. The new Regional Energy, Sustainable Design and Life Cycle Cost Analysis Centers the technical experience in energy and sustainability across the Corps of Engineers and develop a strategy

  20. US Army Corps of Engineers @

    E-Print Network [OSTI]

    US Army Corps of Engineers

    ............................... 32 Hydraulic Engineer .......................................... 34 Flood Control Dams and ChannelsUS Army Corps of Engineers @ Water Resources: Hydraulics and Hydrology Interview wjth Jacob H States Army Corps of Engineers significantly contributed to hydraulic and hydrologic engineering over

  1. Skilled Veterans Corps

    E-Print Network [OSTI]

    Hacker, Randi

    2011-08-31

    once and for all. A group of elders has volunteered to clean up the reactors damaged by the tsunami and earthquake. Calling itself the Skilled Veteran Corps, the group consists of engineers and other specialists over 60 who are able?and willing--to do a...

  2. Sunner Solar Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc JumpHeter BatterySolarfinMarketMember Corp JumpSunfilm AG Jump

  3. EA-376 Societe Generale Energy Corp | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Corp Order authorizing Societe Generale Energy Corp to export electric energy to Canada EA-376 Societe Generale Energy Corp More Documents & Publications Application to...

  4. Marine Corps Base Quantico Achieves 85% Savings in Parking Lighting...

    Energy Savers [EERE]

    Marine Corps Base Quantico Achieves 85% Savings in Parking Lighting Marine Corps Base Quantico Achieves 85% Savings in Parking Lighting Marine Corps Base Quantico (MCBQ) in...

  5. Three Notch Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al., 2013) |InformationThe2009)Thonotosassa,Thornwood,Lakes,

  6. Tri-State Electric Member Corp (Tennessee) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al., 2013)OpenEnergyTrail CanyonsourceRiver Solar |Trexa

  7. Tri-State Electric Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al., 2013)OpenEnergyTrail CanyonsourceRiver Solar |TrexaTri-State Electric

  8. Duck River Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstrumentsAreafor Geothermal Resources Rules

  9. Slash Pine Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity forSilicium de ProvenceSolar Jump to: navigation, searchSkåneSlash

  10. South River Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity forSiliciumEnergyHouston, Texas:588958°,

  11. Blue Ridge Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC JumpBiossence Jump to: navigation,Bloomer Electric &Ltd

  12. Central Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd Jump to: navigation,Cauvery HydroCentinelaCentralCoop,

  13. Little Ocmulgee El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervarLeeds, UnitedLibertyLite On Technology Corporation

  14. Lumbee River Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervarLeeds,Asia-Pacific DevelopingLower ValleyLudgateLumbee River

  15. Middle Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to: navigation,Mereg GmbH Jump to:EC-LEDSMidAmerican Energy CoMiddle

  16. Niobrara Valley El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg, Oregon: Energy ResourcesJiuyi Hydropower Co Ltd

  17. North Georgia Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg, Oregon: EnergyNongqishi ElectricElec Coop, IncElectricElec

  18. Okefenoke Rural El Member Corp (Florida) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg, Oregon:OGE Energy Resources,ElectricOglethorpeOhioOilFlorida)

  19. Okefenoke Rural El Member Corp | Open Energy Information

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  20. Pee Dee Electric Member Corp | Open Energy Information

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  1. Pitt & Greene Elec Member Corp | Open Energy Information

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  2. Pointe Coupee Elec Member Corp | Open Energy Information

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  3. Four County Elec Member Corp | Open Energy Information

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  4. French Broad Elec Member Corp (Tennessee) | Open Energy Information

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  5. French Broad Elec Member Corp | Open Energy Information

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  6. Jones-Onslow Elec Member Corp | Open Energy Information

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  7. Snapping Shoals El Member Corp | Open Energy Information

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  8. Tipmont Rural Elec Member Corp | Open Energy Information

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  9. Tri-County Elec Member Corp | Open Energy Information

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  10. Surry-Yadkin Elec Member Corp | Open Energy Information

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  11. Tri-County Elec Member Corp (Kentucky) | Open Energy Information

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  12. Tri-County Elec Member Corp (Tennessee) | Open Energy Information

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  13. Carteret-Craven El Member Corp | Open Energy Information

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  14. Black Warrior Elec Member Corp | Open Energy Information

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  15. EnergyUnited Elec Member Corp | Open Energy Information

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  16. Joe Wheeler Elec Member Corp | Open Energy Information

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  17. Baldwin County El Member Corp | Open Energy Information

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  18. North Carolina El Member Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to:Information 3rd| Open EnergyAndover, Massachusetts: EnergyPlantNorth

  19. EA-149 PacifiCorp | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    149 PacifiCorp EA-149 PacifiCorp Order authorizing PacifiCorp to export electric energy to Mexico. EA-149 PacifiCorp (MX).pdf More Documents & Publications EA-247-D Constellation...

  20. BOARD OF DIRECTORS UCHCFC CIRCLE ROAD CORP.

    E-Print Network [OSTI]

    was also notified that the IRS issued a determination that the Circle Road Corp was tax exempt underBOARD OF DIRECTORS OF THE UCHCFC CIRCLE ROAD CORP. MINUTES OF THE SEPTEMBER 29, 2014 MEETING BOARD

  1. US Army Corps of Engineers

    E-Print Network [OSTI]

    US Army Corps of Engineers

    for strength tests, analysis conditions, and factors of safety. The criteria in this EM are to be used.......................................................................2-6 2-12 Chapter 3 Design Criteria General...........................................................................................................US Army Corps of Engineers® ENGINEERING AND DESIGN EM 1110-2-1902 31 Oct 2003 Slope Stability

  2. " Best Practices Scorecard (c) GA Tech Research Corp.

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l De p u t y A s s i s t a n t S e c r e t1 = =.c.at I * Best

  3. Serveron Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity for Low Emission Development Strategies (EC-LEDS)Serveron Corp Jump

  4. Surprise Valley Electrification Corp. (Nevada) | Open Energy Information

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  5. Taiwan PolySilicon Corp TPSI | Open Energy Information

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  6. Elastomeric member

    DOE Patents [OSTI]

    Hoppie, L.O.

    1985-07-30

    An energy storage device is disclosed consisting of a stretched elongated elastomeric member disposed within a tubular housing, which elastomeric member is adapted to be torsionally stressed to store energy. The elastomeric member is configured in the relaxed state with a uniform diameter body section, and transition end sections, attached to rigid end piece assemblies of a lesser diameter. The profile and deflection characteristic of the transition sections are such that upon stretching of the elastomeric member, a substantially uniform diameter assembly results, to minimize the required volume of the surrounding housing. Each of the transition sections are received within and bonded to a woven wire mesh sleeve having helical windings at a particular helix angle to control the deflection of the transition section. Each sleeve also contracts with the contraction of the associated transition section to maintain the bond there between. During manufacture, the sleeves are forced against a forming surface and bonded to the associated transition section to provide the correct profile and helix angle. 12 figs.

  7. Elastomeric member

    DOE Patents [OSTI]

    Hoppie, Lyle O. (Birmingham, MI)

    1985-01-01

    An energy storage device (10) is disclosed consisting of a stretched elongated elastomeric member (16) disposed within a tubular housing (14), which elastomeric member (16) is adapted to be torsionally stressed to store energy. The elastomeric member (16) is configured in the relaxed state with a uniform diameter body section (74), and transition end sections (76, 78), attached to rigid end piece assemblies (22, 24) of a lesser diameter. The profile and deflection characteristic of the transition sections (76, 78) are such that upon stretching of the elastomeric member (16), a substantially uniform diameter assembly results, to minimize the required volume of the surrounding housing (14). Each of the transition sections (76, 78) are received within and bonded to a woven wire mesh sleeve (26, 28) having helical windings at a particular helix angle to control the deflection of the transition section. Each sleeve (26, 28) also contracts with the contraction of the associated transition section to maintain the bond therebetween. During manufacture, the sleeves (26, 28) are forced against a forming surface and bonded to the associated transition section (76, 78) to provide the correct profile and helix angle.

  8. Enerize Corp | Open Energy Information

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  9. Ferrotec Corp | Open Energy Information

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  10. Solexant Corp | Open Energy Information

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  11. Microsemi Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: Energy ResourcesDec 2005 WindPRO isMickey HotMicrosemi Corp Jump to:

  12. Zephyr Corp | Open Energy Information

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  13. Ambient Corp | Open Energy Information

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  14. MSK Corp | Open Energy Information

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  15. Qynergy Corp | Open Energy Information

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  16. Kyocera Corp | Open Energy Information

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  17. Ember Corp | Open Energy Information

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  18. Hohsen Corp | Open Energy Information

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  19. Kyungdong Photovoltaic Energy Corp KPE formerly Photon Semiconductor...

    Open Energy Info (EERE)

    Photovoltaic Energy Corp KPE formerly Photon Semiconductor Energy Jump to: navigation, search Name: Kyungdong Photovoltaic Energy Corp (KPE) (formerly Photon Semiconductor &...

  20. US Army Corps of Engineers PLANNING SMART

    E-Print Network [OSTI]

    US Army Corps of Engineers

    US Army Corps of Engineers PLANNING SMART BUILDING STRONG PCoP Panel Q&A Forum Today's Panel Sue the lack of detailed information available during the SMART Planning process? #12;BUILDING STRONG evaluation? #12;US Army Corps of Engineers PLANNING SMART BUILDING STRONG Thank You! Type questions

  1. , Member, IEEE , Member, IEEE , Student Member, IEEE , Fellow, IEEE

    E-Print Network [OSTI]

    Hajimiri, Ali

    , Member, IEEE , Member, IEEE , Student Member, IEEE , Fellow, IEEE Abstract-- Index Terms-- #12;et Measurements Under Stress #12;et al. IEEE J. Solid-State Circuits et al. IEEE J. Solid-State Circuits et al. IEEE A-SSCC Tech. Dig. IEEE J. Solid-State Circuits IEEE Int. Solid-State Circuits Conf. Tech. Dig

  2. DOE Cites Safety and Ecology Corp. for Violating Nuclear Safety...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    DOE Cites Safety and Ecology Corp. for Violating Nuclear Safety Rules DOE Cites Safety and Ecology Corp. for Violating Nuclear Safety Rules June 14, 2005 - 4:53pm Addthis...

  3. GEXA Corp. (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

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  4. TKX Corp | Open Energy Information

    Open Energy Info (EERE)

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  5. DEPARTMENT OF THE ARMY NEW YORK DISTRICT, CORPS OF ENGINEERS

    E-Print Network [OSTI]

    US Army Corps of Engineers

    DEPARTMENT OF THE ARMY NEW YORK DISTRICT, CORPS OF ENGINEERS JACOB K. JAVITS FEDERAL BUILDING NEW The U.S. Army Corps of Engineers, New York District (District) announces the availability of the Draft will be posted on the U.S. Army Corps of Engineers, New York District's website: http

  6. US Army Corps of Engineers BUILDING STRONG

    E-Print Network [OSTI]

    US Army Corps of Engineers

    . With sustainability as a guiding principle, our disciplined Corps team is working diligently to strengthen our nation is energizing America's economy by keeping shipping channels open for navigation to support the movement, toxic or radioactive waste and ordnance in an effort to sustain the environment. Environmental Sampling

  7. US Army Corps of Engineers BUILDING STRONG

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Reduction System Sod Industry Day Mike Park Chief Task Force Hope U.S. Army Corps of Engineers September 18, 2014 #12;Sod Industry Day Hurricane Katrina Aug 29, 2005 One of America's largest natural disasters Cat 3 strength at landfall 2 Hurricane Rita Sep 24, 2005 #12;Sod Industry Day Wave Overtopping Effects

  8. Readiness Review Training- Member

    Office of Energy Efficiency and Renewable Energy (EERE)

    Slides used for November 10, 2010 Readiness Review Member Training at the Idaho National Laboratory. Course provides tools and tips to be an effective readiness review team member.

  9. San Miguel Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/ColoradoRemsenburg-Speonk,Sage Resources JumpDimas,Rey, California:Martin,Corp Jump to:

  10. Rainbow Energy Marketing Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/WaterEnergy Marketing Corp Jump to: navigation, search Name:

  11. Lab-Corps Teams | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuelsof EnergyApril 2014 | International NuclearKarenUpdatesLab-Corps Teams

  12. April 13 2011 Webinar: A Guide to Using AmeriCorps NCCC Teams to Execute Your Mission

    Broader source: Energy.gov [DOE]

    April 13 2011 Webinar: A Guide to Using AmeriCorps NCCC Teams to Execute Your Mission; help with program implementating AmeriCorps’ National Civilian Community Corps.

  13. Vision Machine & Fabrication Corp. Named Top Small Business Subcontrac...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vision Machine & Fabrication Corp. Named Top Small Business Subcontractor at Jefferson Lab for FY 2014 NEWPORT NEWS, VA, Sept. 10, 2015 - Jefferson Science Associates, the...

  14. Sunflower Electric Power Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing CapacityVectren)Model for theSunLan Solar Co LtdSunbury,SunergicCounty,Corp

  15. Sunrise Solar Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing CapacityVectren)Model for theSunLan SolarKorea Jump to:SunrepsSolar Corp

  16. GS Yuasa Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable Urban TransportFortistarFuelCellsEtcSiliconGRR (Redirected fromCorp Jump

  17. Green Energy Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia:Oregon:Corp Jump to: navigation, search Name: Green

  18. Green Mountain Power Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia:Oregon:Corp Jump to:India Renewables(Redirected from

  19. Green Mountain Power Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia:Oregon:Corp Jump to:India Renewables(Redirected

  20. Environmental Power Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH JumpEllenville,Power Corp Jump to: navigation, search Name:

  1. Mitsubishi Electric Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: Energy ResourcesDec 2005MinnehahaElectric Coop,Mithril GmbH Jump to:Corp Jump

  2. Magnet Motor Corp | Open Energy Information

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  3. Jackson Energy Coop Corp | Open Energy Information

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  4. EXL III Group Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:of the NationalDynetek EuropeEPG| OpenEXL III Group Corp

  5. First Electric Coop Corp | Open Energy Information

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  6. GEXA Corp. (New Hampshire) | Open Energy Information

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  7. GEXA Corp. (New Jersey) | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:ofEnia SpAFlexStock Co LtdWiegandGEXA Corp. Place: NewGEXA

  8. GEXA Corp. (Pennsylvania) | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:ofEnia SpAFlexStock Co LtdWiegandGEXA Corp. Place:

  9. JFE Steel Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervar Hydro Jump to: navigation,Jump to:Corp Jump to: navigation,

  10. JM Energy Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervar Hydro Jump to: navigation,Jump to:Corp Jump to:ApproachJM

  11. Silicon Chemical Corp SCC | Open Energy Information

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  12. Union Electric Membership Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (Utility Company) JumpGTZ Climate OrientedUnion Electric Membership Corp

  13. SunPower Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS ReportEuropeEnergy Information Recent FlowNewSunErgy AE JumpCorp

  14. Upstate NY Power Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJThin FilmUnited States: EnergyUpper Cumberland E M CNY Power Corp

  15. West Central School Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJThinWarsaw, Poland:EnergyWe EnergyInformation AfricanSchool Corp

  16. Woodruff Electric Coop Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAand Dalton Jump to: navigation,Wood County Electric Coop, IncCoop Corp

  17. Arise Technologies Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex A S JumpArchuletaArise Technologies Corp Jump to: navigation,

  18. Beacon Power Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminexInformationArkansas:Information DeliHavenCorp Jump to:

  19. AFS Trinity Power Corp | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAand Dalton JumpProgram |RecentSulfonate as401 WaterADNRAEPAFC EnergyCorp

  20. GEXA Corp. (Delaware) | Open Energy Information

    Open Energy Info (EERE)

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  1. North Newton School Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to:Information 3rd| OpenInformation 9thNorthNewton School Corp Jump

  2. Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment and Recommendations Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment...

  3. ORSSAB Members | Department of Energy

    Office of Environmental Management (EM)

    Members ORSSAB Members Belinda Price Chair Read Bio Alfreda Cook Vice Chair Read Bio David Hemelright Secretary Read Bio Leon Baker Member Read Bio Richard...

  4. Tri-State Electric Member Corp (North Carolina) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al., 2013)OpenEnergyTrail CanyonsourceRiver Solar |Trexa MotorState

  5. Tri-County Elec Member Corp (North Carolina) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (Utility Company) Jump to: navigation,Power Systems Inc JumpNorth

  6. Acculturation in International Development: The Peace Corps in Costa Rica

    E-Print Network [OSTI]

    Tsatsoulis-Bonnekessen, Barbara

    1994-04-08

    In its thirty years of service, the Peace Corps has acquired a well founded international reputation for successful grassroots development assistance through the unpretentious lifestyle of American individuals living and ...

  7. ARMY, MARINE CORPS, NAVY, AIR FORCE MULTISERVICE TACTICS,

    E-Print Network [OSTI]

    US Army Corps of Engineers

    ARMY, MARINE CORPS, NAVY, AIR FORCE MULTISERVICE TACTICS, TECHNIQUES, AND PROCEDURES Development and Integration T. L. DAVISON THOMAS J. LOFTUS Captain, US Navy Major General, USAF, MC, CFS Acting Assistant Surgeon General Navy Warfare Development Command Health Care Operations Office

  8. Final Report Survey of Hazardous Trees on Marine Corps Depot

    E-Print Network [OSTI]

    Bolding, M. Chad

    1 Final Report Survey of Hazardous Trees on Marine Corps Depot Parris Island, South ............................................................................................................................... 10 Hazard Rating and Attributes ................................................................................................................... 26 #12;3 Abstract Surveying for hazardous trees is the first step

  9. Lab-Corps Program Helping to Accelerate Commercialization of...

    Office of Environmental Management (EM)

    into high-impact technologies in the marketplace. | Photo by Dennis SchroederNREL The Energy Department's Lab-Corps pilot program is a national network that aims to...

  10. U.S. Army Corps of Engineers New York District

    E-Print Network [OSTI]

    US Army Corps of Engineers

    U.S. Army Corps of Engineers New York District Harbor Inspection September 16, 2015p , Vision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Colonel David Caldwell, Commander, USACE New York District 0945 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Group Photo of Partners New York Harbor Harbor Operations Overview

  11. Marine Corps Leadership Lessons for the Workplace: A Case Study

    E-Print Network [OSTI]

    Wiechmann, Jeff R.

    2011-12-16

    The United States Marine Corps is a military organization and institution recognized for the past 236 years as the nation’s finest fighting force. Their structure, traditions, and approach to leadership are emulated worldwide as the model...

  12. Members | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergyInterested Parties - WAPAEnergy May 28 Webinar toMeeting theMegan SlackMemberMembers

  13. FEMP and U.S. Army Corps of Engineers Partner to Drive Down Federal...

    Energy Savers [EERE]

    FEMP and U.S. Army Corps of Engineers Partner to Drive Down Federal Energy Costs FEMP and U.S. Army Corps of Engineers Partner to Drive Down Federal Energy Costs March 26, 2015 -...

  14. Comment submitted by InterMetro Industries Corp. regarding the Energy Star Verification Testing Program

    Broader source: Energy.gov [DOE]

    This document is a comment submitted by InterMetro Industries Corp. regarding the Energy Star Verification Testing Program

  15. Taiwan Glass Industry Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc JumpHeter BatterySolarfinMarketMemberI P RuralTaiga Mistral Jump

  16. Tanaka Chemical Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc JumpHeter BatterySolarfinMarketMemberI P RuralTaigaValley E PTanaka Chemical

  17. Air Force | Army | Marine Corps Navy & Coast Guard General of the Air Force/Army

    E-Print Network [OSTI]

    Air Force | Army | Marine Corps Navy & Coast Guard O-10 General of the Air Force/Army (Reserved Corps Navy & Coast Guard WarrantOfficers No Warrant Officer Rank Warrant Officer 1 Chief Warrant Officer Warrant Officer 5 Air Force Army Marine Corps Navy & Coast Guard E-9 Chief Master Sergeant of the Air

  18. Peace Corps on the rise at Virginia Tech

    E-Print Network [OSTI]

    Tech Peace Corps recruiter Rachael Kennedy. Raised in a service-minded family, as a child Kennedy sang packed a lot of clothes, but once I got there I wore very few of them,"Kennedy says."I learned is learning new languages. For Kennedy, it was particularly demanding. She had to learn not only Uzbek

  19. US Army Corps of Engineers Engineer Research and Development Center

    E-Print Network [OSTI]

    (Electricity, Natural Gas, Water...) · Non Tactical Vehicles #12;FY06 DoD Energy Use Total Site.5% Commodity $13.6B Other 0.2% Coal 2% Steam 1% Auto Gas 1% Electricity 12% Fuel Oil 3% Natural Gas 8% Jet Fuel ­ Improve energy security #12;9 US Army Corps of Engineers® Engineer Research and Development Center 2006

  20. Shaping Environmental Awareness The United States Army Corps of Engineers

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Shaping Environmental Awareness The United States Army Corps of Engineers Environmental Advisory of Engineers Environmental Advisory Board 1970-1980 by Martin Reuss Historical Division Office of Administrative Services Office of the Chief of Engineers #12;Foreword In response to the growing environmental

  1. Science and Technology Roadmap Cooperative Research Program (CoRP)

    E-Print Network [OSTI]

    Kuligowski, Bob

    Science and Technology Roadmap Cooperative Research Program (CoRP) National Oceanic and Atmospheric.3.2 The Global Precipitation Climatology Project 5. SCIENCE AND TECHNOLOGY ROADMAP 6. PERFORMANCE TARGETS 6RP research capabilities are described along with a science roadmap for the next decade. This science

  2. The Department Of Energy Has Joined The Civilian Response Corps

    Broader source: Energy.gov [DOE]

    Secretaries Clinton and Chu announce that the Department of Energy has joined the Civilian Response Corps, the U.S. Government’s expeditionary, interagency civilian force dedicated to conflict prevention, response, and peacebuilding. The Office of Electricity Delivery and Energy Reliability will lead this effort for DOE.

  3. Wave Energy Test Site (WETS) Marine Corps Base Hawaii (MCBH)

    E-Print Network [OSTI]

    Wave Energy Test Site (WETS) Marine Corps Base Hawaii (MCBH) Alexandra DeVisser, NAVFAC-EXWC Brian June 10, 2013 #12;Wave Energy Test Site (WETS) Objective: Provide location for year-long in Cable, Sound & Sea Technology (SST) Luis A. Vega, HNEI-University of Hawaii Energy Ocean International

  4. Melt containment member

    DOE Patents [OSTI]

    Rieken, Joel R.; Heidloff, Andrew J.

    2014-09-09

    A tubular melt containment member for transient containment of molten metals and alloys, especially reactive metals and alloys, includes a melt-contacting layer or region that comprises an oxygen-deficient rare earth oxide material that is less reactive as compared to the counterpart stoichiometric rare earth oxide. The oxygen-deficient (sub-stoichiometric) rare earth oxide can comprise oxygen-deficient yttria represented by Y.sub.2O.sub.3-x wherein x is from 0.01 to 0.1. Use of the oxygen-deficient rare earth oxide as the melt-contacting layer or region material reduces reaction with the melt for a given melt temperature and melt contact time.

  5. 1988 National List of Plant Species that Occur in Wetlands The U.S. Army Corps of Engineers (Corps) as of 2006 has accepted the administrative responsibility for

    E-Print Network [OSTI]

    US Army Corps of Engineers

    1988 National List of Plant Species that Occur in Wetlands The U.S. Army Corps of Engineers (Corps) as of 2006 has accepted the administrative responsibility for the National Wetland Plant List from the U plant lists from their National Wetland Inventory (NWI) web site. The web pages and associated files

  6. Lab-Corps Fact Sheet | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuelsof EnergyApril 2014 | International NuclearKarenUpdates LPOLab-Corps Fact

  7. Graduate Curriculum Committee 20142015 Members

    E-Print Network [OSTI]

    Graduate Curriculum Committee 20142015 Members CHARGE: To address the issues formerly under each (8) of the academic college graduate curriculum committees selected by the curriculum committees

  8. Environmental Management Advisory Board Members | Department...

    Office of Environmental Management (EM)

    EMAB Board Member Read Bio Lessie B. Price EMAB Board Member Read Bio Beverly Ramsey EMAB Board Member Read Bio Timothy Runyon EMAB Board Member Read Bio David W....

  9. Peace Corps Volunteers and the Boundaries of Bottom-up Development

    E-Print Network [OSTI]

    Schuckman, Hugh Erik

    2012-01-01

    to have the most basic training modules such as instructionswelcome. Having basic training modules pre- packaged wouldmodules were already completed, however, the Peace Corps training

  10. Lab-Corps Initiative Moves High-Impact Innovations into the Marketplac...

    Energy Savers [EERE]

    Home About the Technology-to-Market Program Cleantech University Prize Energy Transition Initiative Lab-Corps Small Business Innovation Research Success Stories...

  11. Peace Corps Volunteers and the Boundaries of Bottom-up Development

    E-Print Network [OSTI]

    Schuckman, Hugh Erik

    2012-01-01

    and the Us Peace Corps." [Pamphlet] (1989). ———. "Looking atarchival resources such as pamphlets, reports, internalwild. They brought now pamphlets, brochures, movies, or any

  12. U.S. Marine Corps Base Camp Pendleton: Using The Sun For Hot Water And Electricity

    SciTech Connect (OSTI)

    2009-09-23

    Case study overview of integrated solar hot water/photovoltaic systems at the U.S. Marine Corps Camp Pendleton training pools.

  13. U.S. Marine Corps Stand at Forefront of Energy and Water Savings (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-12-01

    This fact sheet is an overview of the U.S. Marine Corps Beaufort Air Station's energy and water savings accomplishments.

  14. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  15. VeraSun Energy Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin, NewArkansas: EnergyVentnor City, New Jersey:VeraSun Energy Corp

  16. DOE - Office of Legacy Management -- Michigan Velsicol Chemical Corp - MI

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont,Manufacturing - OHSelling Corp - CTMill Site -

  17. DOE - Office of Legacy Management -- Mobil Oil Corp - VA 01

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont,Manufacturing - OHSelling Corp -Moab AEC OreMobil

  18. DOE - Office of Legacy Management -- Oliver Corp - MI 11

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont,Manufacturing -Nevada Test SiteNYOakOliver Corp -

  19. DOE - Office of Legacy Management -- Petrolite Corp - MO 08

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont,Manufacturing -NevadaCentralPetrolite Corp - MO 08

  20. DOE - Office of Legacy Management -- Star Cutter Corp - MI 15

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co - OHStar Cutter Corp - MI 15 FUSRAP

  1. DOE - Office of Legacy Management -- Sylvania Corning Nuclear Corp Inc

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co - OHStar Cutter Corp -Sutton

  2. DOE - Office of Legacy Management -- Vapofier Corp - IL 25

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co -VA 03 VirginiaVapofier Corp - IL

  3. Imara Corp formerly Lion Cells | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy Resources JumpNewTexas:HydrothermallyIFBIdea OneIllumitex JumpImara Corp

  4. GreenFuel Technologies Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia:Oregon:Corp JumpGreen2V Jump to:GreenFire Energy

  5. Marine Corps Base Quantico Achieves 85% Savings in Parking Lighting

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Financing Tool Fits the BillDepartmentSites |Strides to Boost theTECHNICAL8, 1979:8,Marine Corps

  6. Shandong Linuo New Material Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity for Low EmissionTianhong Silicon MaterialNew Material Corp Jump to:

  7. Pacific Fuel Cell Corp PFCE | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio Program | OpenWisconsin:NewOverPPSEnergyFuel Cell Corp PFCE Jump

  8. Bihar State Hydroelectric Power Corp BSHPC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to:Greece:BajoBelpower SrlHydroelectric Power Corp BSHPC Jump

  9. Central Hudson Gas & Elec Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd Jump to: navigation,CauveryGas & Elec Corp Jump to:

  10. Sky WindPower Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavyAgencyTendo New Energy Equipment Co LtdSimran WindWindPower Corp

  11. Nuclear Power Corp L T JV | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg, Oregon: EnergyNongqishiCleanAlincaUK LtdCorp L T JV Jump to:

  12. FirstEnergy Generation Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:ofEnia SpA JumpGmbHFerrisFillmoreChoiceGeneration Corp Jump

  13. Just Energy New York Corp. (New York) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervar Hydro JumpHuari Silicon MaterialJunco NovoNew York Corp.

  14. Liberty Power Corp. (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervarLeeds, UnitedLiberty Power Corp. Place: Rhode Island Website:

  15. Safe Harbor Water Power Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg,EnergyEastCarbon Development |SMCHarbor Water Power Corp Jump

  16. Silicon Genesis Corp SiGen | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS ReportEurope GmbH Jump to: navigation,ShowSikes Act JumpGenesis Corp

  17. U.S. Army Corps of Engineers | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJThin Film SolarTown(LECBP) | OpenTrackI WindU.S. Army Corps of

  18. ARMY, MARINE CORPS, NAVY, AIR FORCE MULTI-SERVICE TACTICS, TECHNIQUES, AND PROCEDURES

    E-Print Network [OSTI]

    US Army Corps of Engineers

    ARMY, MARINE CORPS, NAVY, AIR FORCE MULTI-SERVICE TACTICS, TECHNIQUES, AND PROCEDURES WENDI B. CARPENTER THOMAS J. LOFTUS Rear Admiral, US Navy Major General, USAF, MC, CFS Commander, Navy the US Marine Corps Web site (https://www.doctrine.usmc.mil); through the US Navy at Navy Knowledge

  19. Wetlands Research Program Technical Report Y-87-1 (on-line edition) Corps of Engineers

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Wetlands Research Program Technical Report Y-87-1 (on-line edition) Corps of Engineers Wetlands Research Program identify the area under which the report was prepared: Task Task CP Critical Processes RE;Wetlands Research Program Technical Report Y-87-1 January 1987 Corps of Engineers Wetlands Delineation

  20. Interim Tolerable Risk Guidelines for US Army Corps of Engineers Dams Dale F. Munger1

    E-Print Network [OSTI]

    Bowles, David S.

    1 Interim Tolerable Risk Guidelines for US Army Corps of Engineers Dams Dale F. Munger1 , David S , and Nathan Snorteland8 1 Assistant Team Leader, USACE Dam Safety Policy and Procedures Team, U.S. Army Corps of Engineers, Portland, OR. 2 Professor of Civil and Environmental Engineering and Director, Institute for Dam

  1. U S Army Corps of Engineers New York DistrictU.S. Army Corps of Engineers, New York District N Y k d N JN Y k d N JNew York and New JerseyNew York and New Jersey

    E-Print Network [OSTI]

    US Army Corps of Engineers

    U S Army Corps of Engineers New York DistrictU.S. Army Corps of Engineers, New York District N Y k d N JN Y k d N JNew York and New JerseyNew York and New Jersey Harbor InspectionHarbor Inspectionpp Fact Sheets | Presentation > #12;U.S. ARMY CORPS OF ENGINEERS ­ NEW YORK DISTRICT 26 FEDERAL PLAZA

  2. Members

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELINGMeetings HighAdvisory Board Director

  3. Members

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELINGMeetings HighAdvisory Board Director

  4. Definitions 4-H members will

    E-Print Network [OSTI]

    principles to achieve variety in design. The criteria for good design are found in the principlesDefinitions Objectives 4-H members will: · Learn definitions of terms used in designing. DESIGN TERMS Before we go into the individual fundamentals of construction for all design, it would help

  5. Application to Export Electric Energy OE Docket No. EA-296-B Rainbow Energy Marketing Corp: Federal Register Notice, Volume 77, No. 66- April 4, 2012

    Broader source: Energy.gov [DOE]

    Application from Rainbow Energy Marketing Corp to export electric energy to Canada. Federal Register Notice.

  6. EEOICPA Event- Augusta, GA

    Broader source: Energy.gov [DOE]

    The Advisory Board is a presidentially appointed board that advises the Secretary of Health and Human Services on a number of issues related to the EEOICPA Program including Special Exposure Cohort (SEC) Petitions. *Public comment sessions may end before the times indicated, following the last call for comments. Members of the public who wish to provide public comments should plan to attend public comment sessions at the start times listed.

  7. FTCP Members | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: AlternativeCommunication3-EDepartmentExerciseCarbon Capture andthe bestofAnnual PlanMembers FTCP

  8. Air Flow North America Corp. – FE Dkt. No. 14-53-LNG (Re-export)

    Broader source: Energy.gov [DOE]

    The Office of Fossil Energy (FE) of the Department of Energy (DOE) gives notice of receipt of an application filed on March 25, 2014, by Air Flow North America Corp. (AIR FLOW) requesting short...

  9. Air Flow North America Corp.- FE Dkt. No. 14-206-LNG

    Broader source: Energy.gov [DOE]

    The Office of Fossil Energy gives notice of receipt of an Application filed December 16, 2014, by Air Flow North America Corp. (Air Flow), seeking a long-term multi-contract authorization to export...

  10. ORSSAB Members | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy Bills and ReduceNovember 2014Marketing2014) |D D O OServices »AugustMembers

  11. Member Benefits | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergyInterested Parties - WAPAEnergy May 28 Webinar toMeeting theMegan SlackMember

  12. Optimize Storage Placement in Sensor Bo Sheng, Member, IEEE, Qun Li, Member, IEEE, and Weizhen Mao, Member, IEEE

    E-Print Network [OSTI]

    Mao, Weizhen

    1 Optimize Storage Placement in Sensor Networks Bo Sheng, Member, IEEE, Qun Li, Member, IEEE, and Weizhen Mao, Member, IEEE Abstract--Data storage has become an important issue in sensor networks as a large amount of collected data need to be archived for future information retrieval. Storage nodes

  13. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  14. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  15. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  16. Evaluating U.S. Army Corps of EngineersEvaluating U.S. Army Corps of Engineers water projects: aiding decisions with cost-water projects: aiding decisions with cost-

    E-Print Network [OSTI]

    Washington at Seattle, University of

    Evaluating U.S. Army Corps of EngineersEvaluating U.S. Army Corps of Engineers water projects: aiding decisions with cost-water projects: aiding decisions with cost- benefit analysisbenefit analysis into classanalysis, transitioned into class focused on this CRS projectfocused on this CRS project #12;Why Now

  17. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  18. IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 7, JULY 2012 967 Size-Dependent-Transport Study of In0.53Ga0.47As

    E-Print Network [OSTI]

    IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 7, JULY 2012 967 Size-Dependent-Transport Study of In0 Jiangjiang J. Gu, Student Member, IEEE, Heng Wu, Yiqun Liu, Adam T. Neal, Roy G. Gordon, and Peide D. Ye, Senior Member, IEEE Abstract--InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm

  19. Re: response to oil disaster; spoil islands and Army Corps Haze, Pam K, Gould, Rowan , Ashe, Dan,

    E-Print Network [OSTI]

    History: Re: response to oil disaster; spoil islands and Army Corps t Haze, Pam K, Gould, Rowan:59:082010 Subject: FW: response to oil disaster; spoil islands and Army Corps at sure who to ask abou this to so some dredging and fortify the Chandeleur Islands or other areas in the oil impact zone

  20. BUILDING STRONG US ARMY CORPS OF ENGINEERS | Jacksonville District Coraggio Maglio, PE, Jase D. Ousley, PG, Manny

    E-Print Network [OSTI]

    US Army Corps of Engineers

    BUILDING STRONG® US ARMY CORPS OF ENGINEERS | Jacksonville District Coraggio Maglio, PE, Jase D BUILDING STRONG® US ARMY CORPS OF ENGINEERS TRADITIONAL BEACH TEMPLATE VS CROSS SHORE SWASH ZONE (CSSZ) PLACEMENT METHODS AT EGMONT KEY, FL High Silt Content Beneficial Use Placement #12;BUILDING STRONG® Outline

  1. U.S. Army Corps of Engineers 2013 Independent External Peer Review of the USACE Dam Safety Program

    E-Print Network [OSTI]

    US Army Corps of Engineers

    ;#12;#12;#12;#12;#12;#12;#12;#12;#12;U.S. Army Corps of Engineers 2013 Independent External Peer Review of the USACE Dam Safety Program. Dan Corrigan #12;U.S. Army Corps of Engineers 2013 Independent External Peer Review of the USACE Dam All Rights Reserved FINAL REPORT: 2013 INDEPENDENT EXTERNAL PEER REVIEW USACE DAM SAFETY PROGRAM TABLE

  2. Predictions of leadership in Texas A&M University's Corps of Cadets 

    E-Print Network [OSTI]

    Henderson, Donald Raymond

    1974-01-01

    ) at Texas ASM University. He is responsible to the President of the University for the establishment of policy governing the function- ing and operations of the Corps of Cadets. Cont a t f ~ttm I sitni: An agreeme t the d t 'g with the United States...PREDICTIONS OF LEADERSHIP IN TEXAS AQ1 UNIVERSITY'S CORPS OF CADETS A Thesis by Donald R. Henderson Submitted to the Graduate College of Texas ASM University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE...

  3. Interagency Energy Management Task Force Members

    Broader source: Energy.gov [DOE]

    The Interagency Energy Management Task Force is led by the Federal Energy Management Program director. Members include energy and sustainability managers from federal agencies.

  4. SSRLUO 2007 Executive Committee Members | Stanford Synchrotron...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Committee Members Joy Andrews (Ex-Officio) California State University East Bay, Chemistry, 25800 Carlos Bee Blvd., Hayward, CA 94542 Professor in the Department of Chemistry...

  5. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  6. On Energy Security of Server Systems Zhenyu Wu, Member, IEEE, Mengjun Xie, Member, IEEE, and Haining Wang, Senior Member, IEEE

    E-Print Network [OSTI]

    Wang, Haining

    On Energy Security of Server Systems Zhenyu Wu, Member, IEEE, Mengjun Xie, Member, IEEE and achieve energy proportional computing. However, the security perspective of server power management has and evaluate its effectiveness. Index Terms--Energy attack, server security, energy-aware programming Ç 1

  7. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  8. Department of the Army U.S. Army Corps of Engineers

    E-Print Network [OSTI]

    US Army Corps of Engineers

    for obtaining the Secretary of the Army's approval td provide minimum facilities for future hydroelectric power adapted to possible future use in the development of hydroelectric power shall be installed in any dam Requirements. Hydroelectric power potential must be investigated, where feasible, in conjunction with all Corps

  9. Tjuly/august 2004 IEEE power & energy magazine 39 CORBIS CORP.

    E-Print Network [OSTI]

    Tesfatsion, Leigh

    Tjuly/august 2004 IEEE power & energy magazine 39 © CORBIS CORP. Modeling the Electricity Market as a Complex Adaptive System with an Agent-Based Approach by Vladimir S. Koritarov THE ELECTRIC POWER INDUSTRY for the modeling and simulation of electricity markets. Unlike conventional electric systems analysis tools

  10. Flood Plain Management Services Program U.S. ARMY CORPS OF ENGINEERS BUILDING STRONG

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Flood Plain Management Services Program U.S. ARMY CORPS OF ENGINEERS BUILDING STRONG® ® People that live and work in the flood plain need to know about the flood hazard and the actions that they can take to reduce property damage and to prevent the loss of life caused by flooding. The Flood Plain Management

  11. Planning Assistance to States U.S. ARMY CORPS OF ENGINEERS BUILDING STRONG

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Planning Assistance to States U.S. ARMY CORPS OF ENGINEERS BUILDING STRONG® ® States, local governments and Native American Tribes often have needs in planning for water and related resources-Federal entities, in the preparation of comprehensive plans for the development and conservation of water

  12. Bell Pirie Power Corp. (PHL) Energy Island Bell Pirie Ltd. (UK)

    E-Print Network [OSTI]

    unit endorsement · Environmental Compliance Certificate Secure Power Purchase Agreement · FeedBell Pirie Power Corp. (PHL) Energy Island Bell Pirie Ltd. (UK) Cabangan 10 MW OTEC Pilot Plant requirement by 2030: Luzon ­ 11,900 MW Visayas ­ 2,150 MW Mindanao ­ 2,500 MW Total: 16,550 MW Source: Power

  13. Ltourneau c. JTI-MacDonald Corp. 2015 QCCS 2382 SUPERIOR COURT

    E-Print Network [OSTI]

    Mullen, Kathy T.

    Létourneau c. JTI-MacDonald Corp. 2015 QCCS 2382 SUPERIOR COURT (Class Action Division) CANADA PROVINCE OF QUÉBEC DISTRICT OF MONTREAL N° : 500-06-000076-980 500-06-000070-983 DATE : June 9, 2015 ________________________________________________________________ PRESIDING: THE HONORABLE BRIAN RIORDAN, J.S.C

  14. U.S. Marine Corps Stand at Forefront of Energy and Water Savings

    SciTech Connect (OSTI)

    2012-12-01

    Located in the heart of South Carolina, the U.S. Marine Corps Air Station (MCAS) Beaufort is among the military’s most important installations. Located on 6,900 acres 70 miles southwest of Charleston, the installation has established an energy- and water-saving culture that explores and implements new strategies and management approaches aimed at surpassing presidential mandates.

  15. DEPARTMENT OF THE ARMY EM 1110-35-1 U.S. Army Corps of Engineers

    E-Print Network [OSTI]

    US Army Corps of Engineers

    DEPARTMENT OF THE ARMY EM 1110-35-1 U.S. Army Corps of Engineers CEMP-DE Washington, DC 20314-1000 Manual No. 1110-35-1 1 July 2005 Engineering and Design MANAGEMENT GUIDELINES FOR WORKING are not addressed except in passing reference to their component part of mixed waste. This manual supersedes EM 1110-35

  16. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  17. Conference Housing Team Member JOB SUMMARY

    E-Print Network [OSTI]

    Walker, Lawrence R.

    Conference Housing Team Member JOB SUMMARY The Conference Housing program exists to serve students with employment opportunities while supporting the University through housing external guests and university sponsored groups. The Conference Housing Team Member shall be responsible to the Conference Housing

  18. Managed Lane Choices by Carpools Comprised of Family Members Compared to Non-family Members 

    E-Print Network [OSTI]

    Pannu, Mandeep S.

    2011-02-22

    Carpools can be comprised of family members (fampools), non-family members (non-fampools) or a combination of both. Overall, carpool mode share has decreased during the 1980's and 1990's, even as the policies were in place ...

  19. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  20. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  1. Texas 4-H Member Achievement Plan 

    E-Print Network [OSTI]

    Lepley, Toby

    2000-08-07

    Achievement Plan (M.A.P.) will help 4-H members develop skills in record keeping and organization. Younger 4-H members are encouraged to record information directly on the form. Older 4-H members can use the M.A.P. as a reference for informa- tion that you... to hold on to your memories about each incredible year you have in 4-H. In a couple of years, you can look back on these journals and remem- ber what fun you had. Record keeping is also a great way to develop your skills in organizing your time, com...

  2. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  3. Elastomeric member for energy storage device

    DOE Patents [OSTI]

    Hoppie, Lyle O. (Birmingham, MI); Chute, Richard (Birmingham, MI)

    1985-01-01

    An energy storage device (10) is disclosed consisting of a stretched elongated elastomeric member (16), disposed within a tubular housing (14), which elastomeric member (16) is adapted to be torsionally stressed to store energy. The elastomeric member (16) is configured in the relaxed state with a uniform diameter body section, transition end sections, and is attached to rigid end piece assemblies (22, 24) of a lesser diameter. The profile and deflection characteristic of the transition sections (76, 78) are such that upon stretching of the member, a substantially uniform diameter assembly results to minimize the required volume of the surrounding housing (14). During manufacture, woven wire mesh sleeves (26, 28) are forced against a forming surface and bonded to the associated transition section (76, 78) to provide the correct profile and helix angle. Each sleeve (26, 28) contracts with the contraction of the associated transition section to maintain the bond therebetween.

  4. ConocoPhillips Alaska Natural Gas Corp. (ConocoPhillips)- EXPORT TO CANADA- FE DKT. 15-149-LNG

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Office of Fossil Energy gives notice of receipt of an Application filed September 28, 2015, by ConocoPhillips Alaska Natural Gas Corp. (ConocoPhillips), seeking a long-term multi-contract...

  5. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  6. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 ?m, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  7. KWIC [KWiCFinder homepage] [WebKWIC homepage] [WebCorp

    E-Print Network [OSTI]

    Sekine, Satoshi

    WEB KWIC WEB WEB KWIC [KWiCFinder homepage] [WebKWIC homepage] [WebCorp homepage] WEB KWIC [ 2003] WEB IDE 32 G KWIC 350G WEB 100 2 cdb 40 KWIC WEB WEB NTCIR Web Retrieval Task 100G 1100 [Eguchi et. al 2002] WEB WEB Yahoo! Japan UNIX GNU Wget WEB html,htm txt robots.txt 3500 1 G G 1 #12;KWIC ( ) 1 40 1TB

  8. Identification and Intervention Procedures for the Learning Disabled in the Earle C. Clements Job Corps Report

    E-Print Network [OSTI]

    Alley, Gordon R.; Brownlee, Jean E.; Deshler, Donald D.; White, Warren J.

    1982-08-01

    that the administrative arrangements did not stigmatize individual corpsmembers. Major Findings In order to address the two major research goals of the pr~ect, a broad array of research and implementation questions were addressed. The first set of questions relate... strategies intervention approach implemented at the Earle C. Clements Job Corps Center was based on several years of research and development 7 (Alley & Deshler, 1979). The program is designed to teach students how to cope with the broad array of academic...

  9. War dogs: the U.S. K-9 Corps in World War II 

    E-Print Network [OSTI]

    Whatley, Donald Alan

    1990-01-01

    the Marine Corps and Coast Guard also operated dog training facilities. Almost 80 percent of the animals served as sentries in the United States and the balance in combat zones. The canines proved most effective as sentries and silent scouts but the Army... as messengers and sentries during the Civil War. Legislation was intro- Documentation follows the of Militar Histor duced in Congress in 1917 to appropriate funds "for the purchase, train- ing, and maintenance of dogs for military purposes. " The bill died...

  10. Lab-Corps Pilot Accelerates Private-Sector Adoption of Game-Changing

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuelsof EnergyApril 2014 | International NuclearKarenUpdates LPOLab-Corps

  11. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  12. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  13. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  14. A Comparative Analysis of Mestizo and Indigenous Mayan Young Women in Guatemala: Attitudes and Knowledge of Sexual Reproduction and Health among Members of Children International's Youth Health Corps

    E-Print Network [OSTI]

    Trapp, Sarah Casement

    2011-04-21

    youth in Guatemala participate in the program together. In this comparative analysis of Kaqchikel Maya young women and non–indigenous young women in Guatemala, a written anonymous survey was administered to both groups of female participants to determine...

  15. Opportunistic control over shared wireless channels Konstantinos Gatsis, Student Member, IEEE, Miroslav Pajic, Member, IEEE, Alejandro Ribeiro, Member, IEEE,

    E-Print Network [OSTI]

    Pappas, George J.

    Opportunistic control over shared wireless channels Konstantinos Gatsis, Student Member, IEEE--We consider a wireless control architecture with multiple control loops over a shared wireless medium. A sched Terms--Scheduling, networked control systems, wireless fading channels, opportunistic adaptation, power

  16. Rare-earth chromium gallides RE{sub 4}CrGa{sub 12} (RE=Tb-Tm)

    SciTech Connect (OSTI)

    Slater, Brianna R.; Bie, Haiying; Stoyko, Stanislav S. [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada)] [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada); Bauer, Eric D.; Thompson, Joe D. [Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)] [Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Mar, Arthur, E-mail: arthur.mar@ualberta.ca [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada)] [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada)

    2012-12-15

    The ternary rare-earth-metal chromium gallides RE{sub 4}CrGa{sub 12} (RE=Tb-Tm) have been prepared by reactions of the elements at 1000 Degree-Sign C in the presence of excess gallium used as a self-flux. Their structures are derived by inserting Cr atoms into a quarter of the empty Ga{sub 6} octahedral clusters found in the parent binary gallides REGa{sub 3} (AuCu{sub 3}-type), although single-crystal X-ray diffraction studies suggest that complex superstructures may be adopted. An ideal ordered Y{sub 4}PdGa{sub 12}-type structure was successfully refined for a crystal of Dy{sub 4}CrGa{sub 12} (Pearson symbol cI34, space group Im3{sup Macron }m, Z=2, a=8.572(1) A). Magnetic measurements on single-crystal samples reveal ferromagnetic or possibly ferrimagnetic ordering for the Tb, Dy, and Er members (T{sub C}=22, 15, and 2.8 K, respectively) and antiferromagnetic ordering for the Ho member (T{sub N}=7.5 K). Band structure calculations on a hypothetical 'Y{sub 4}CrGa{sub 12}' model suggest that the Cr atoms carry no local magnetic moment. - Graphical abstract: RE{sub 4}CrGa{sub 12} is derived by inserting Cr atoms into empty Ga{sub 6} octahedral clusters present in the parent binary gallides REGa{sub 3}. Highlights: Black-Right-Pointing-Pointer RE{sub 4}MGa{sub 12} (previously known for M=Fe, Ni, Pd, Pt, Ag) has been extended to M=Cr. Black-Right-Pointing-Pointer RE{sub 4}CrGa{sub 12} compounds show predominantly ferromagnetic ordering. Black-Right-Pointing-Pointer Band structure calculations suggest that Cr atoms carry no local magnetic moment.

  17. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  18. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  19. State Monitoring in Cloud Datacenters Shicong Meng, Student Member, IEEE, Ling Liu, Senior Member, IEEE, and

    E-Print Network [OSTI]

    Liu, Ling

    State Monitoring in Cloud Datacenters Shicong Meng, Student Member, IEEE, Ling Liu, Senior Member application is a critical functionality for cloud datacenter management. State monitoring requires meeting two. Index Terms--State monitoring, datacenter, cloud, distributed, aggregation, tuning. Ç 1 INTRODUCTION

  20. Bootstrapping Ontologies for Web Services Aviv Segev, Member, IEEE, and Quan Z. Sheng, Member, IEEE

    E-Print Network [OSTI]

    Sheng, Michael

    Bootstrapping Ontologies for Web Services Aviv Segev, Member, IEEE, and Quan Z. Sheng, Member, IEEE textual sources, such as web services, must address the problem of multiple, largely unrelated concepts. In this paper, we propose an ontology bootstrapping process for web services. We exploit the advantage that web

  1. CESA-2010-Members-Report.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    A-2010-Members-Report.pdf CESA-2010-Members-Report.pdf More Documents & Publications Connecticut Fuel Cell Programs - From Demonstration to Deployment CESA-fuelcell-advancing-state...

  2. Global Nuclear Energy Partnership Steering Group Members Approve...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Steering Group Members Approve Transformation to the International Framework for Nuclear Energy Cooperation Global Nuclear Energy Partnership Steering Group Members Approve...

  3. Residential Network Members Impact More Than 42,000 Households...

    Energy Savers [EERE]

    Members Impact More Than 42,000 Households Photo of a row of townhomes. Eligible Better Buildings Residential Network members reported completing 27,563 home energy upgrades...

  4. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  5. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  6. U.S. Marine Corps Base Camp Pendleton: Using The Sun For Hot Water And Electricity, Federal Energy Management Program (FEMP) (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2009-09-01

    Case study overview of integrated solar hot water/photovoltaic systems at the U.S. Marine Corps Camp Pendleton training pools.

  7. US Synthetic Corp (TRL 4 Component)- The Development of Open, Water Lubricated Polycrystalline Diamond Thrust Bearings for use in Marine Hydrokinetic (MHK) Energy Machines

    Broader source: Energy.gov [DOE]

    US Synthetic Corp (TRL 4 Component) - The Development of Open, Water Lubricated Polycrystalline Diamond Thrust Bearings for use in Marine Hydrokinetic (MHK) Energy Machines

  8. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  9. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  10. November 2014 Biographies of EAGDA members

    E-Print Network [OSTI]

    Rambaut, Andrew

    directed the IFS research into consumption and savings (1992-1999), served as IFS Deputy Director (1997 Council on Bioethics, and a member of the Medical Research Council and the Human Genetics Advisory (1992-1999) and he was Chair in Genetic Epidemiology at the University of Leicester (1999

  11. Introduction Member Benefits Program of Work

    E-Print Network [OSTI]

    Linhardt, Robert J.

    that much of the early conservation measures have been implemented, LEA will work to identify effective new ways to save energy, quantify the savings, and support its members in implementation. LEA invites utilities, efficiency agencies, and ESCOs to join its efforts. The membership cost for the LEA is: · $30

  12. Service Members Aim High-- for Energy Savings

    Broader source: Energy.gov [DOE]

    Service members are helping reduce our dependency on oil, and saving taxpayers' money, with their energy-saving efforts. Operation Change Out has cut $26.3 million in total energy costs and helped prevent more than 396 lbs. of carbon dioxide.

  13. Elastomeric member and method of manufacture therefor

    DOE Patents [OSTI]

    Hoppie, Lyle O. (Birmingham, MI)

    1985-01-01

    An energy storage device (10) is disclosed consisting of a stretched elongated elastomeric member (16) disposed within a tubular housing (14), which elastomeric member (16) is adapted to be torsionally stressed to store energy. The elastomeric member (16) is configured in the relaxed state with a uniform diameter body section (74), and transition end sections (76, 78), attached to rigid end piece assemblies (22, 24) of a lesser diameter. The profile and deflection characteristic of the transition sections (76, 78) are such that upon stretching of the elastomeric member (16), a substantially uniform diameter assembly results, to minimize the required volume of the surrounding housing (14). Each of the transition sections (76, 78) are received within and bonded to a woven wire mesh sleeve (26, 28) having helical windings at a particular helix angle to control the deflection of the transition section. Each sleeve (26, 28) also contracts with the contraction of the associated transition section to maintain the bond therebetween. During manufacture, the sleeves (26, 28) are forced against a forming surface and bonded to the associated transition section (76, 78) to provide the correct profile and helix angle.

  14. Elastomeric member and method of manufacture therefor

    DOE Patents [OSTI]

    Hoppie, L.O.

    1985-12-10

    An energy storage device is disclosed consisting of a stretched elongated elastomeric member disposed within a tubular housing, which elastomeric member is adapted to be torsionally stressed to store energy. The elastomeric member is configured in the relaxed state with a uniform diameter body section, and transition end sections, attached to rigid end piece assemblies of a lesser diameter. The profile and deflection characteristic of the transition sections are such that upon stretching of the elastomeric member, a substantially uniform diameter assembly results, to minimize the required volume of the surrounding housing. Each of the transition sections are received within and bonded to a woven wire mesh sleeve having helical windings at a particular helix angle to control the deflection of the transition section. Each sleeve also contracts with the contraction of the associated transition section to maintain the bond therebetween. During manufacture, the sleeves are forced against a forming surface and bonded to the associated transition section to provide the correct profile and helix angle. 12 figs.

  15. Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment and Recommendations

    SciTech Connect (OSTI)

    Burman, K.; Kandt, A.; Lisell, L.; Booth, S.; Walker, A.; Roberts, J.; Falcey, J.

    2011-11-01

    DOD's U.S. Pacific Command has partnered with the U.S. Department of Energy's (DOE) National Renewable Energy Laboratory (NREL) to assess opportunities for increasing energy security through renewable energy and energy efficiency in Hawaii installations. NREL selected Marine Corps Base Hawaii (MCBH), Kaneohe Bay to receive technical support for net zero energy assessment and planning funded through the Hawaii Clean Energy Initiative (HCEI). NREL performed a comprehensive assessment to appraise the potential of MCBH Kaneohe Bay to achieve net zero energy status through energy efficiency, renewable energy, and electric vehicle integration. This report summarizes the results of the assessment and provides energy recommendations.

  16. DOE - Office of Legacy Management -- Eimco Corp - IL 0-01

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont, SouthLaboratoryDiv - NYCorp - NJEimco Corp - IL

  17. DOE - Office of Legacy Management -- Hydroblast Corp - IL 0-03

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont, SouthLaboratoryDivHarshawHydroblast Corp - IL

  18. DOE - Office of Legacy Management -- Metals Selling Corp - CT 0-01

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont,Manufacturing - OHSelling Corp - CT 0-01 FUSRAP

  19. DOE - Office of Legacy Management -- Metals and Controls Corp FSM Dept - MA

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont,Manufacturing - OHSelling Corp - CT 0-01

  20. DOE - Office of Legacy Management -- Oregon Metallurgical Corp - OR 0-02

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont,Manufacturing -Nevada Test SiteNYOakOliver Corp

  1. DOE - Office of Legacy Management -- United Nuclear Corp - MO 0-03

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co - OHStarTracerlab IncMinesNuclear Corp

  2. DOE - Office of Legacy Management -- Virginia-Carolina Chemical Corp - FL

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co -VA 03 VirginiaVapofier Corp -

  3. DOE - Office of Legacy Management -- Vitro Corp of America - NJ 02

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co -VA 03 VirginiaVapofier Corp -NJ 02

  4. DOE - Office of Legacy Management -- Vitro Corp of America - TN 04

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co -VA 03 VirginiaVapofier Corp -NJ

  5. ProtoFlex Corp formerly Alpha Optics Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGeneration Jump to:SpatialResolutionWidth (m)Power Pty LtdProtoFlex Corp

  6. Application to Export Electric Energy OE Docket No. EA-145-E Powerex Corp:

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l De p u tCorporation | Department of Energy Powerex CorpComment

  7. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  8. On the Capacity of k-MPR Wireless Networks Ming-Fei Guo, Member, IEEE, Xinbing Wang, Member, IEEE, Min-You Wu, Senior Member, IEEE

    E-Print Network [OSTI]

    Wang, Xinbing

    1 On the Capacity of k-MPR Wireless Networks Ming-Fei Guo, Member, IEEE, Xinbing Wang, Member, IEEE, Min-You Wu, Senior Member, IEEE Abstract--The capacity of wireless ad hoc networks is mainly the capacity of 2-D wireless networks wherein each node can decode at most k simultaneous transmis- sions

  9. Approaches to Creating and Controlling Motion in MRI Gregory S. Fischer, Member, IEEE, Gregory Cole, Student Member, IEEE and Hao Su, Student Member, IEEE

    E-Print Network [OSTI]

    Camesano, Terri

    Approaches to Creating and Controlling Motion in MRI Gregory S. Fischer, Member, IEEE, Gregory Cole, Student Member, IEEE and Hao Su, Student Member, IEEE Abstract-- Magnetic Resonance Imaging (MRI) can is complicated by factors including: the high magnetic field strength, the requirement that such devices should

  10. The United States Navy and Marine Corps rely far too much on petroleum, a dependency that degrades the strategic position of our country and the tactical

    E-Print Network [OSTI]

    The United States Navy and Marine Corps rely far too much on petroleum, a dependency that degrades the nation towards a clean energy economy, the Department of the Navy established the following five ambitious energy goals that will move the Navy and Marine Corps away from a reliance on petroleum

  11. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  12. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  13. ORDNANCE CORPS

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700 GJO-2003-411-TAC GJO-PIN~$ ., .,. ' e' ,

  14. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  15. CMI Team Members | Critical Materials Institute

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room News PublicationsAudits &Bradbury Science Museum6Materials3 CMI educationCMI Team Members

  16. Theme 1 Members | Photosynthetic Antenna Research Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.Week DayDr. Jeffrey publication of thetime it1 Members Theme

  17. Theme 2 Members | Photosynthetic Antenna Research Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.Week DayDr. Jeffrey publication of thetime it1 Members Theme2

  18. Theme 3 Members | Photosynthetic Antenna Research Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.Week DayDr. Jeffrey publication of thetime it1 Members

  19. Member Institutions | Photosynthetic Antenna Research Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCentermillion Measurement ofSchweglerfeed-imagelevelMember

  20. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  1. Multiple capillary biochemical analyzer with barrier member

    DOE Patents [OSTI]

    Dovichi, Norman J. (Edmonton, CA); Zhang, Jian Z. (Edmonton, CA)

    1996-01-01

    A multiple capillary biochemical analyzer for sequencing DNA and performing other analyses, in which a set of capillaries extends from wells in a microtiter plate into a cuvette. In the cuvette the capillaries are held on fixed closely spaced centers by passing through a sandwich construction having a pair of metal shims which squeeze between them a rubber gasket, forming a leak proof seal for an interior chamber in which the capillary ends are positioned. Sheath fluid enters the chamber and entrains filament sample streams from the capillaries. The filament sample streams, and sheath fluid, flow through aligned holes in a barrier member spaced close to the capillary ends, into a collection chamber having a lower glass window. The filament streams are illuminated above the barrier member by a laser, causing them to fluoresce. The fluorescence is viewed end-on by a CCD camera chip located below the glass window. The arrangement ensures an equal optical path length from all fluorescing spots to the CCD chip and also blocks scattered fluorescence illumination, providing more uniform results and an improved signal to noise ratio.

  2. Multiple capillary biochemical analyzer with barrier member

    DOE Patents [OSTI]

    Dovichi, N.J.; Zhang, J.Z.

    1996-10-22

    A multiple capillary biochemical analyzer is disclosed for sequencing DNA and performing other analyses, in which a set of capillaries extends from wells in a microtiter plate into a cuvette. In the cuvette the capillaries are held on fixed closely spaced centers by passing through a sandwich construction having a pair of metal shims which squeeze between them a rubber gasket, forming a leak proof seal for an interior chamber in which the capillary ends are positioned. Sheath fluid enters the chamber and entrains filament sample streams from the capillaries. The filament sample streams, and sheath fluid, flow through aligned holes in a barrier member spaced close to the capillary ends, into a collection chamber having a lower glass window. The filament streams are illuminated above the barrier member by a laser, causing them to fluoresce. The fluorescence is viewed end-on by a CCD camera chip located below the glass window. The arrangement ensures an equal optical path length from all fluorescing spots to the CCD chip and also blocks scattered fluorescence illumination, providing more uniform results and an improved signal-to-noise ratio. 12 figs.

  3. Cooperative Research between NREL and Solar Junction Corp: Cooperative Research and Development Final Report, CRADA Number CRD-08-306

    SciTech Connect (OSTI)

    Friedman, D.

    2015-03-01

    NREL and Solar Junction Corp. will perform cooperative research on materials and devices that are alternatives to standard approaches with the goal of improving solar cell efficiency while lowering cost. The general purpose of this work is to model the performance of a multi-junction concentrator cell of Solar Junction, Inc. design under normal concentrator operating conditions.

  4. U.S. ARMY CORPS OF ENGINEERS CONTRIBUTION TO PROGRESS REPORT FOR 2011-2012 IN COMPLIANCE WITH

    E-Print Network [OSTI]

    US Army Corps of Engineers

    addressed. For example, because the Corps is such a decentralized organization, many individuals in the field do not know whom to contact at HQ. This was solved simply by finding the source of organization charts and sending them out as they are updated. Other issues to be addressed in the near future include

  5. Global Nuclear Energy Partnership Members Convene in Jordan For...

    Energy Savers [EERE]

    Members Convene in Jordan For Second Steering Group Meeting Global Nuclear Energy Partnership Members Convene in Jordan For Second Steering Group Meeting May 15, 2008 - 12:00pm...

  6. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  7. NEJC Board Member Receives 2015 National Planning Excellence Award

    Broader source: Energy.gov [DOE]

    National Environmental Justice Conference, Inc. Board of Directors Member Receives American Planning Association 2015 National Planning Excellence Award

  8. Time Feature Selection for Identifying Active Household Members

    E-Print Network [OSTI]

    ]. The identification of active house- hold members, defined as the discrimination of which users from a given household

  9. NOAA Committee Memberships, 2004-2008 Eddie N. Bernard, Member, NOAA Tsunami Program Team, 2005-present

    E-Print Network [OSTI]

    . Koehn, Member, NOAA Science, Technology, and Infusion Program Team, 2003-2005 Mark P. Koehn, Member

  10. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  11. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  12. Automatically Detecting Members and Instrumentation of Music Bands via Web

    E-Print Network [OSTI]

    Widmer, Gerhard

    as new or modi- fied web pages incorporating the changes become available. Deriving (member, instrumentAutomatically Detecting Members and Instrumentation of Music Bands via Web Content Mining Markus to automatically de- tecting music band members and instrumentation using web content min- ing techniques

  13. Check list for new CNLD members updated 4 September 2014

    E-Print Network [OSTI]

    . #12;Research web pages: each member should write a research description for the CNLD web pages. See email for instructions on how to access your homepage. Also look at "How to update personal pages" on the "Members" page at chaos.utexas.edu Computer related issues: see the IT committee member who represents your

  14. Growth and characterization of liquid phase epitaxial GaP layers 

    E-Print Network [OSTI]

    Kao, Yung-Chung

    1982-01-01

    Z HSVHd aInbIq BO NOIIVZIHBIDVBVHD GNV KIMO'80 GROWTH AND CHARACTERIZATION OF LIQUID PHASE EPITAXIAL GaP LAYERS A Thesis by YUNG-CHUNG KAO Approved as to style and content by: 04 (Chairman of Comm' tee) (Member) ~a m. December 1982 ABSTRACT... GROWTH AND CHARACTERIZATION OF LIQUID PHASE EPITAXIAL Gap LAYERS. (December 1982) Yung-Chung Kao, B. S. , National Tsing-Hua University Chairman of Advisory Committee: Dr. Ohannes Eknoyan Gallium Phosphide, a compound semiconductor with wide energy...

  15. US Army Corps of Engineers Section 404: permitting of valley fills - red flag or red tape?

    SciTech Connect (OSTI)

    Thomas R. Johnston, Jr. [Skelly & Loy (United States)

    2009-03-15

    Since 2001 the US Army Corps of Engineers has been permitting most surface coal mines as Individual Permits rather than Nationwide Permits under the Section 404 program. This was shown in a survey by Skelly & Loy of permits published by Huntingdon Crops District and the state of Kentucky. Nationwide Permit 21 (NWP21) authorises the filling of waters of the United States associated with surface coal mining and reclamation operations already authorised or currently being processed as part of the integrated permit processing procedure. NWP21 has received much opposition and two noticeable court cases involving it, in West Virginia and Kentucy, are briefly reported. The article first appeared in Skelly & Loy's newsletter, Portal to the mining industry, Vol II, Issue 1. 4 photos.

  16. Electric Vehicle Preparedness: Task 1, Assessment of Fleet Inventory for Marine Corps Base Camp Lejeune

    SciTech Connect (OSTI)

    Schey, Stephen; Francfort, Jim

    2015-01-01

    Several U.S. Department of Defense-based studies were conducted to identify potential U.S. Department of Defense transportation systems that are strong candidates for introduction or expansion of plug-in electric vehicles (PEVs). Task 1 included a survey of the inventory of non-tactical fleet vehicles at the Marine Corps Base Camp Lejeune (MCBCL) to characterize the fleet. This information and characterization will be used to select vehicles for monitoring that takes place during Task 2. This monitoring involves data logging of vehicle operation in order to identify the vehicle’s mission and travel requirements. Individual observations of these selected vehicles provide the basis for recommendations related to PEV adoption. It also identifies whether a battery electric vehicle or plug-in hybrid electric vehicle (collectively referred to as PEVs) can fulfill the mission requirements and provides observations related to placement of PEV charging infrastructure.

  17. Variables influencing family members' decisions regarding continued placement of family members with mental disabilities in one state-operated institution 

    E-Print Network [OSTI]

    Colvin, Alex Don

    2009-05-15

    The purpose of the study is to identify variables influencing family members’ decisions regarding continued placement of family members with mental disabilities in state-operated mental retardation institutions. This study ...

  18. Early Identification of Violent Criminal Gang Members

    E-Print Network [OSTI]

    Shaabani, Elham; Shakarian, Paulo; Bertetto, John

    2015-01-01

    Gang violence is a major problem in the United States accounting for a large fraction of homicides and other violent crime. In this paper, we study the problem of early identification of violent gang members. Our approach relies on modified centrality measures that take into account additional data of the individuals in the social network of co-arrestees which together with other arrest metadata provide a rich set of features for a classification algorithm. We show our approach obtains high precision and recall (0.89 and 0.78 respectively) in the case where the entire network is known and out-performs current approaches used by law-enforcement to the problem in the case where the network is discovered overtime by virtue of new arrests - mimicking real-world law-enforcement operations. Operational issues are also discussed as we are preparing to leverage this method in an operational environment.

  19. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  20. Targeting Net Zero Energy at Marine Corps Base Hawaii, Kaneohe Bay: Preprint

    SciTech Connect (OSTI)

    Burman, K.; Kandt, A.; Lisell, L.; Booth, S.

    2012-05-01

    This paper summarizes the results of an NREL assessment of Marine Corps Base Hawaii (MCBH), Kaneohe Bay to appraise the potential of achieving net zero energy status through energy efficiency, renewable energy, and hydrogen vehicle integration. In 2008, the U.S. Department of Defense's U.S. Pacific Command partnered with the U.S. Department of Energy's (DOE's) National Renewable Energy Laboratory (NREL) to assess opportunities for increasing energy security through renewable energy and energy efficiency at Hawaii military installations. DOE selected Marine Corps Base Hawaii (MCBH), Kaneohe Bay, to receive technical support for net zero energy assessment and planning funded through the Hawaii Clean Energy Initiative (HCEI). NREL performed a comprehensive assessment to appraise the potential of MCBH Kaneohe Bay to achieve net zero energy status through energy efficiency, renewable energy, and hydrogen vehicle integration. This paper summarizes the results of the assessment and provides energy recommendations. The analysis shows that MCBH Kaneohe Bay has the potential to make significant progress toward becoming a net zero installation. Wind, solar photovoltaics, solar hot water, and hydrogen production were assessed, as well as energy efficiency technologies. Deploying wind turbines is the most cost-effective energy production measure. If the identified energy projects and savings measures are implemented, the base will achieve a 96% site Btu reduction and a 99% source Btu reduction. Using excess wind and solar energy to produce hydrogen for a fleet and fuel cells could significantly reduce energy use and potentially bring MCBH Kaneohe Bay to net zero. Further analysis with an environmental impact and interconnection study will need to be completed. By achieving net zero status, the base will set an example for other military installations, provide environmental benefits, reduce costs, increase energy security, and exceed its energy goals and mandates.

  1. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  2. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  3. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  4. Lab-Corps: Creating Market Pathways for Laboratory Research; U.S. Department of Energy (DOE), Energy Efficiency & Renewable Energy (EERE)

    SciTech Connect (OSTI)

    2015-08-01

    The Lab-Corps program is a specialized training curriculum aimed at accelerating the transfer of clean energy technologies from national laboratories into the commercial marketplace. Administered by the U.S. Department of Energy’s (DOE's) Office of Energy Efficiency and Renewable Energy, Lab-Corps is a new model of engagement as a part of the Lab Impact Initiative. In addition to Lab-Corps, the Lab Impact Initiative utilizes the Small Business Voucher and Technologist-in-Residence programs to increase and enhance laboratory-private sector relationships, streamline access to national laboratory capabilities, and demonstrate the value of laboratory-developed science and technology.

  5. Ashland oil, Inc. v. Sonford Products Corp., Kelley v. Tiscornia, and United States v. Fleet Factors Corp.: Upholding EPA`s lender liability rule

    SciTech Connect (OSTI)

    Evans, W.D. Jr. [San Francisco`s Graham & James, Washington, DC (United States)

    1993-12-31

    John Grisham`s novel The Firm relates the story of Mitchell McDeere, a young law school graduate who believes that he is joining a {open_quotes}white shoe{close_quotes} Memphis, Tennessee, firm but discovers that the firm is controlled by the Mob. A similar, but different, {open_quotes}surprise{close_quotes} has befallen banks as a result of toxic waste cleanup cost claims. When the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA or Superfund) was passed in 1980, banks had no cause for alarm because the Act provided an exemption from its ownership-based liability for any lender holding {open_quotes}indicia of ownership primarily to protect his security interest{close_quotes} in a hazardous waste facility. Based on the statutory language, it seemed reasonably clear that Congress did not intend to impose liability on secured creditors merely for securing a debt with a deed of trust or mortgage. Unfortunately, lender liability for CERCLA claims arose in the mid-1980s out of two lower federal court decisions and the Eleventh Circuit`s controversial, to say the least, 1990 decision in United States v. Fleet Factors Corp (Fleet Factors II). The major issues currently confronting lenders under CERCLA are (1) the extent to which a secured creditor may involve itself in the debtor`s operations, especially during a loan workout program, without becoming liable for cleanup costs as a CERCLA {open_quotes}owner or operator{close_quotes} and (2) whether a lender who forecloses on collateral and takes title is liable under CERCLA. 94 refs.

  6. Dual mode fuel injector with one piece needle valve member

    DOE Patents [OSTI]

    Lawrence, Keith E. (Peoria, IL); Hinrichsen, Michael H. (Goodfield, IL); Buckman, Colby (Bellville, MI)

    2005-01-18

    A fuel injector includes a homogenous charge nozzle outlet set and a conventional nozzle outlet set controlled respectively by inner and outer needle value members. The homogenous charged nozzle outlet set is defined by an outer needle value member that is moveably positioned in an injector body, which defines the conventional nozzle outlet set. The inner needle valve member is positioned in the outer needle valve member. The outer needle valve member is a piece component that includes at least one external guide surface, an external value surface and an internal valve seat.

  7. Mixed mode fuel injector with individually moveable needle valve members

    DOE Patents [OSTI]

    Stewart, Chris; Chockley, Scott A.; Ibrahim, Daniel R.; Lawrence, Keith; Tomaseki, Jay; Azam, Junru H.; Tian, Steven Ye; Shafer, Scott F.

    2004-08-03

    A fuel injector includes a homogenous charge nozzle outlet set and a conventional nozzle outlet set controlled respectively, by first and second needle valve members. One of the needle valve members moves to an open position while the other needle valve member remains stationary for a homogeneous charge injection event. The former needle valve member stays stationary while the other needle valve member moves to an open position for a conventional injection event. One of the needle valve members is at least partially positioned in the other needle valve member. Thus, the injector can perform homogeneous charge injection events, conventional injection events, or even a mixed mode having both types of injection events in a single engine cycle.

  8. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  9. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  10. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  11. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  12. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  13. The relationships among affective organizational commitment, transformational leadership style, and unit organizational effectiveness within the Corps of Cadets at Texas A&M University 

    E-Print Network [OSTI]

    Ekeland, Terry Paul

    2006-04-12

    race/ethnicity, unit membership, ROTC affiliation, scholarship/military contract status, or legacy affiliation? 2. What level of transformational leadership style (as indicated by the Multifactor Leadership Questionnaire) do cadets perceive... are practiced by unit leaders in the Corps of Cadets, and are there differences in perceived leadership styles based on corps classification, gender, race/ethnicity, unit membership, ROTC affiliation, scholarship/military contract status, or legacy...

  14. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  15. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  16. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  17. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  18. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  19. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  20. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  1. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  2. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  3. Testing and evaluation of grout repaired tubular members 

    E-Print Network [OSTI]

    Nunn, John Mansfield

    1992-01-01

    of Failed Weld Seam page 64 65 66 69 73 74 80 82 31 Ideahzed Tubular Dented Member for the Taby, Zhou, and the Parsanejad Methods. . . . . . . . . . . . . . , . 92 32 Dent Geometry for the Elhnas Method 96 33 Experimental Ultimate Capamty vs P... commonly used to repiur damaged tubular members. These include 1 ) welding a sleeve around the outside of the member in the location of the damage, 2 ) applying an externally grouted clamp, and 3 ) applying internal grout Ideally, the repair method...

  4. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  5. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  6. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  7. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  8. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  9. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  10. Better Buildings Residential Network All-Member Peer Exchange...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Better Buildings Residential Network Member Reporting and Benefits Overview Jonathan Cohen DOE Better Buildings Residential Network Benefits of Reporting IMPACT: Sharing the...

  11. The Critical Materials Institute announces two new industry members...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Critical Materials Institute announces two new industry members Contacts: For release: Aug. 18, 2015 Alex King, Director, Critical Materials Institute, (515) 296-4505 Laura...

  12. Critical Materials Institute signs new member United Technologies...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    signs new member United Technologies Research Center Contacts: For release: Aug. 18, 2015 Alex King, Director, Critical Materials Institute, (515) 296-4505 Laura Millsaps, Ames...

  13. California Member Connects Solar Adoption With Upgrades | Department...

    Energy Savers [EERE]

    adoption and energy upgrades by Better Buildings Residential Network member Center for Sustainable Energy (CSE) in California are helping solar companies realize that partnering...

  14. Secretary of Energy Advisory Board Public Meeting Committee Members...

    Broader source: Energy.gov (indexed) [DOE]

    public comment followed a discussion on recent SEAB task force reports on High Performance Computing and Technology Development for Environmental Management. The members then...

  15. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  16. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  17. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  18. Molecular mechanics calculations of five-membered and pseudo-four-membered rings 

    E-Print Network [OSTI]

    Cooper, Carol Rae

    1986-01-01

    . Jaan Laane Molecular mechanics calculations (MM2) were used to determine barriers to planarity and -pseudorotation in the five-membered rings, 1, 3-dioxolane and CsHsX, where X = CHz, CO, 0, S, SiHz. Energies for planar, twist (Cz) and bent (C... TO MODIFY EXiSTING MM2" FORCE FIELD VITA 76 92 ]01 109 122 128 132 134 134 138 146 163 166 LIST OF TABLES TABLE Page IH-1 Calculated components of steric energy for planar, C, and Cs conformations of cyclopentane. 20 III-2 Barriers...

  19. OXY (Occidental Petroleum Corp. ) units plan U. K. work worth $1. 5 billion

    SciTech Connect (OSTI)

    Not Available

    1980-09-15

    Occidental Refineries Ltd., an Occidental Petroleum Corp. subsidiary, plans to spend about $500,000 to build a 60,000 bbl/day hydrocracker on Canvey Island near London to produce aviation fuel, naphtha, and gasoline. Occidental hopes to deflect criticism by environmentalists, concerned about the concentration of petroleum facilities in the area, by installing a minimum amount of LPG storage and not using hydrogen sulfide on the site. During the 1970's, Occidental had prepared the site for the construction of a 125,000 bbl/day refinery, plans for which were scrapped after the demand for product compounds decreased. Occidental Chemical Co., another Occidental Petroleum subsidiary, plans to spend about $500,000 to build a 300,000 ton/yr ethylene plant at Peterhead, Scotl. The cracker would take part of the output from the de-ethanizer at the St. Fergus terminal for the proposed U.K. gas-gathering pipeline. Both projects would require about 3-4 yr to complete. Esso Chemical Ltd. will build a 550,000 ton/yr ethylene plant near the Mossmoran gas liquids plant in Fife, Scotl.

  20. Targeting Net Zero Energy at Marine Corps Air Station Miramar: Assessment and Recommendations

    SciTech Connect (OSTI)

    Booth, S.; Barnett, J.; Burman, K.; Hambrick, J.; Helwig, M.; Westby, R.

    2010-12-01

    The U.S. Department of Defense (DoD) is the largest energy consumer in the U.S. government. Present energy use impacts DoD global operations by constraining freedom of action and self-sufficiency, demanding enormous economic resources, and putting many lives at risk in logistics support for deployed environments. There are many opportunities for DoD to more effectively meet energy requirements through a combination of human actions, energy efficiency technologies, and renewable energy resources. In 2008, a joint initiative was formed between DoD and the U.S. Department of Energy (DOE) to address military energy use. This initiative created a task force comprised of representatives from each branch of the military, the Office of the Secretary of Defense (OSD), the Federal Energy Management Program (FEMP), and the National Renewable Energy Laboratory (NREL) to examine the potential for ultra high efficiency military installations. This report presents an assessment of Marine Corps Air Station (MCAS) Miramar, selected by the task force as the initial prototype installation based on its strong history of energy advocacy and extensive track record of successful energy projects.

  1. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  2. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  3. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  4. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  5. President's Message: thoughts of gratitude! Dear CBA Members

    E-Print Network [OSTI]

    Massicotte, Hugues

    President's Message: thoughts of gratitude! Dear CBA Members: As I write this, I can still feel the energy and enthusiasm of the joint SPNHC- CBA in Ottawa at the beginning of June. Blessed with beautiful, creativity, humanity and artistry. A note of appreciation should go to the 14 members of the SPHNC-CBA Local

  6. BEING SUPPORTIVE AS A FAMILY MEMBER OR FRIEND

    E-Print Network [OSTI]

    McQuade, D. Tyler

    BEING SUPPORTIVE AS A FAMILY MEMBER OR FRIEND Distributed by the University Counseling Center us on Facebook! Facebook.com/UCCFSU A family member or other loved one has been through a difficult to recover from the crisis. Structure and the company of others can provide predictability, comfort

  7. Response to: An Application by NSPI, NewPage Port Hawkesbury Corp. and

    E-Print Network [OSTI]

    Hughes, Larry

    energy and is a partner in the province's search for tidal energy (Emera 2009b). Most recently, NSP-Gen Ltd. ­ Review and Approval of a Proposed 60 MW Biomass Project (UARB P-172) Larry Hughes Energy.hughes@dal.ca 19 June 2009 Acknowledgements: The author would like to thank the following members of the Energy

  8. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  9. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  10. Faculty and Staff (cont.): Faculty and Staff Members Serving for 0 (mod 5) years

    E-Print Network [OSTI]

    Deng, Bo

    Offices: Rex Dieter, Member of Fedora Project Board Rex Dieter, Elected Member of KDE Steve Dunbar, MAA

  11. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  12. Energy-Aware MPEG-4 FGS Streaming Kihwan Choi, Member IEEE, Kwanho Kim, Member IEEE, and Massoud Pedram, Fellow IEEE

    E-Print Network [OSTI]

    Pedram, Massoud

    Energy-Aware MPEG-4 FGS Streaming Kihwan Choi, Member IEEE, Kwanho Kim, Member IEEE, and Massoud Pedram, Fellow IEEE Abstract -- In this paper, we propose an energy-aware MPEG-4 FGS video streaming-aware. Index Terms -- MPEG-4 FGS, video streaming, communication energy, computation energy. I. INTRODUCTION

  13. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  14. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  15. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  16. Method for brazing together planar and nonplanar metal members

    DOE Patents [OSTI]

    Hammersand, Fred G. (East Petersburg, PA); Witkowski, Anthony J. (Lancaster, PA)

    1985-01-01

    The invention relates to a method and apparatus for brazing two metal members together, at least one of which is nonplanar, in a brazing furnace using a substantially pure brazing material. The method comprises the steps of utilizing a brazing fixture to hold the two metal members in tangential relation to one another along a portion of each member so that a cavity is formed adjacent to the contacting portions. A braze material is then positioned within the cavity. The braze fixture, the metal members, and the braze material are then placed in a brazing furnace. A heat shield is then placed over the braze fixture, the metal members, and the braze material to shield the braze material from direct furnace radiation. The furnace temperature is linearly increased at a rate of about 180.degree. C. per hour until a temperature of 350.degree. C. is achieved. Heat is transferred by conduction from the metal members to the braze material to cause the braze material to melt. Some material from the metal members slowly diffuses into the braze material forming a braze joint. The furnace is rapidly cooled to room temperature using nitrogen gas. The brazed assemblies made according to this method are superior to assemblies formed by heliarc welding.

  17. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  18. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  19. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  20. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  1. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  2. Means to flexibly attach lens frames to temple members

    DOE Patents [OSTI]

    Smith, Harry D. (Richland, WA)

    1995-01-01

    The invention is a band hinge for flexibly connecting the temple member to the lens frame thereby preventing damage from inadvertent pressure or cyclic wear. A distinguishing feature of the invention is the use of a band hinge that holds together the temple member and the lens frame without the use of a pin or screw hinging mechanism. The invention allows for a high degree of freedom of movement for the temple member with respect to the lens frame which will prevent most forms of damages to the glasses from these types of events.

  3. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  4. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  5. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  6. Accessibility of Computer Science: A Reflection for Faculty Members

    E-Print Network [OSTI]

    O'Leary, Dianne P.

    Accessibility of Computer Science: A Reflection for Faculty Members Dianne P. O'Leary http O'Leary. Copyright Dianne P. O'Leary, 1999 Version 1: June 1999 1 Picture Yourself: You are male

  7. DOE appoints four new members to advisory board

    Broader source: Energy.gov [DOE]

    DOE has appointed four new members to its Environmental Management advisory board in Oak Ridge. Leon Baker, Richard Burroughs, Terri Likens and Ed Trujillo were introduced during the Oak Ridge Site Specific Advisory Board’s February meeting.

  8. Strategic Planning Committee Members Name School/College

    E-Print Network [OSTI]

    Arnold, Jonathan

    Strategic Planning Committee Members Name School/College William Vencill - Chair CAES Robert Hoyt ­ Vice-Chair Terry COB Lonnie Brown Law School Ron Walcott CAES Marsha Black Public Health Alison

  9. Actuator assembly including a single axis of rotation locking member

    DOE Patents [OSTI]

    Quitmeyer, James N.; Benson, Dwayne M.; Geck, Kellan P.

    2009-12-08

    An actuator assembly including an actuator housing assembly and a single axis of rotation locking member fixedly attached to a portion of the actuator housing assembly and an external mounting structure. The single axis of rotation locking member restricting rotational movement of the actuator housing assembly about at least one axis. The single axis of rotation locking member is coupled at a first end to the actuator housing assembly about a Y axis and at a 90.degree. angle to an X and Z axis providing rotation of the actuator housing assembly about the Y axis. The single axis of rotation locking member is coupled at a second end to a mounting structure, and more particularly a mounting pin, about an X axis and at a 90.degree. angle to a Y and Z axis providing rotation of the actuator housing assembly about the X axis. The actuator assembly is thereby restricted from rotation about the Z axis.

  10. Development of a failure prediction method for damaged tubular members 

    E-Print Network [OSTI]

    Ritter, James Edward

    1992-01-01

    DEVELOPMENT OF A FAILURE PREDICTION METHOD FOR DAMAGED TUBULAR MEMBERS A Thesis by ZAMES EDWARD RITTER Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree of MASTER... OF SCIENCE May 1992 Major Subject: Civil Engineering DEVELOPMEMT OF A FAILURE PREDICTION METHOD FOR DAMAGED TUBULAR MEMBER8 A Thesis by JAMES EDWARD RITTER Approved as to style and content by: T ry L. Kohutek (Chair of Committee) Loren D. Lutes...

  11. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  12. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  13. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  14. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  15. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  16. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  17. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  18. Robust Data-Driven State Estimation for Smart Grid Yang Weng, Student Member, IEEE, Rohit Negi, Member, IEEE, Christos Faloutsos, Member, IEEE, and

    E-Print Network [OSTI]

    Murphy, Robert F.

    1 Robust Data-Driven State Estimation for Smart Grid Yang Weng, Student Member, IEEE, Rohit Negi, a grand challenge to the newly built smart grid is how to "optimally" estimate the state with increasing in the volatile smart grid. Frequent topology changes, poor measurement accuracy, and malicious attack can further

  19. On the Power Management of Simultaneous Multithreading Ahmed Youssef, Student Member, IEEE, Mohamed Zahran, Senior Member, IEEE, Mohab Anis, Member, IEEE,

    E-Print Network [OSTI]

    Zahran, Mohamed M.

    1 On the Power Management of Simultaneous Multithreading Processors Ahmed Youssef, Student Member, straining the power budget of the processor. This increases not only the dynamic power consumption, but also the leakage power consumption due to the increased temperature. In this paper, a compari- son of the static

  20. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  1. Generalization Improvement in Multi-Objective Learning Lars Graning, Yaochu Jin, Senior Member, IEEE, and Bernhard Sendhoff, Senior Member, IEEE

    E-Print Network [OSTI]

    Jin, Yaochu

    Generalization Improvement in Multi-Objective Learning Lars Gr¨aning, Yaochu Jin, Senior Member to be learned. The main challenge here is the learning of a new task may cause Lars Gr¨aning, Yaochu Jin

  2. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  3. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  4. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  5. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  6. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  7. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  8. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  9. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  10. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  11. Vibration dampener for dampening vibration of a tubular member

    DOE Patents [OSTI]

    Obermeyer, Franklin D. (Pensacola, FL); Middlebrooks, Willis B. (Pensacola, FL); DeMario, Edmund E. (Columbia, SC)

    1994-01-01

    Vibration dampener for dampening vibration of a tubular member, such as an instrumentation tube of the type found in nuclear reactor pressure vessels. The instrumentation tube is received in an outer tubular member, such as a guide thimble tube. The vibration dampener comprises an annular sleeve which is attachable to the inside surface of the guide thimble tube and which is sized to surround the instrumentation tube. Dimples are attached to the interior wall of the sleeve for radially supporting the instrumentation tube. The wall of the sleeve has a flexible spring member, which is formed from the wall, disposed opposite the dimples for biasing the instrumentation tube into abutment with the dimples. Flow-induced vibration of the instrumentation tube will cause it to move out of contact with the dimples and further engage the spring member, which will flex a predetermined amount and exert a reactive force against the instrumentation tube to restrain its movement. The amount by which the spring member will flex is less than the unrestrained amplitude of vibration of the instrumentation tube. The reactive force exerted against the instrumentation tube will be sufficient to return it to its original axial position within the thimble tube. In this manner, vibration of the instrumentation tube is dampened so that in-core physics measurements are accurate and so that the instrumentation tube will not wear against the inside surface of the guide thimble tube.

  12. Vibration dampener for dampening vibration of a tubular member

    DOE Patents [OSTI]

    Obermeyer, F.D.; Middlebrooks, W.B.; DeMario, E.E.

    1994-10-18

    Vibration dampener for dampening vibration of a tubular member, such as an instrumentation tube of the type found in nuclear reactor pressure vessels is disclosed. The instrumentation tube is received in an outer tubular member, such as a guide thimble tube. The vibration dampener comprises an annular sleeve which is attachable to the inside surface of the guide thimble tube and which is sized to surround the instrumentation tube. Dimples are attached to the interior wall of the sleeve for radially supporting the instrumentation tube. The wall of the sleeve has a flexible spring member, which is formed from the wall, disposed opposite the dimples for biasing the instrumentation tube into abutment with the dimples. Flow-induced vibration of the instrumentation tube will cause it to move out of contact with the dimples and further engage the spring member, which will flex a predetermined amount and exert a reactive force against the instrumentation tube to restrain its movement. The amount by which the spring member will flex is less than the unrestrained amplitude of vibration of the instrumentation tube. The reactive force exerted against the instrumentation tube will be sufficient to return it to its original axial position within the thimble tube. In this manner, vibration of the instrumentation tube is dampened so that in-core physics measurements are accurate and so that the instrumentation tube will not wear against the inside surface of the guide thimble tube. 14 figs.

  13. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  14. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  15. Graphene Layer Growth: Collision of Migrating Five-MemberRings

    SciTech Connect (OSTI)

    Whitesides, Russell; Kollias, Alexander C.; Domin, Dominik; Lester Jr., William A.; Frenklach, Michael

    2005-12-02

    A reaction pathway is explored in which two cyclopenta groups combine on the zigzag edge of a graphene layer. The process is initiated by H addition to a five-membered ring, followed by opening of that ring and the formation of a six-membered ring adjacent to another five-membered ring. The elementary steps of the migration pathway are analyzed using density functional theory to examine the region of the potential energy surface associated with the pathway. The calculations are performed on a substrate modeled by the zigzag edge of tetracene. Based on the obtained energetics, the dynamics of the system are analyzed by solving the energy transfer master equations. The results indicate energetic and reaction-rate similarity between the cyclopenta combination and migration reactions. Also examined in the present study are desorption rates of migrating cyclopenta rings which are found to be comparable to cyclopenta ring migration.

  16. Exotensioned structural members with energy-absorbing effects

    DOE Patents [OSTI]

    Brockwell, Michael Ian

    2014-01-07

    Structural members having enhanced load bearing capacity per unit mass include a skeleton structure formed from strips of material. Notches may be placed on the strips and a weave of tensile material placed in the notches and woven around the skeleton structure. At least one pair of structural members can be jointed together to provide very strong joints due to a weave patterns of tensile material, such as Kevlar, that distributes stress throughout the structure, preventing stress from concentrating in one area. Methods of manufacturing such structural members include molding material into skeletons of desired cross section using a matrix of molding segments. Total catastrophic failures in composite materials are substantially avoided and the strength to weight ratio of structures can be increased.

  17. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  18. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  19. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  20. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  1. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  2. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  3. Members | ANSER Center | Argonne-Northwestern National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCentermillion Measurement ofSchweglerfeed-imagelevelMemberMembers

  4. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  5. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  6. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  7. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  8. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  9. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  10. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  11. Advanced Low Temperature Absorption Chiller Module Integrated with a CHP System at a Distributed Data Center- Presentation by Exergy Partners Corp., June 2011

    Broader source: Energy.gov [DOE]

    Presentation on Develop & Demonstrate an Advanced Low Temp Heat Recovery Absorption Chiller Module, given by Richard Sweetser of Exergy Partners Corp., at the U.S. DOE Industrial Distributed Energy Portfolio Review Meeting in Washington, D.C. on June 1-2, 2011.

  12. Hybrid Al/SiC Composite Optics for IFE Applications W. Kowbel, MER Corp., Tucson, AZ And M. Tillack, UCSD, La Jolla, CA

    E-Print Network [OSTI]

    Tillack, Mark

    Hybrid Al/SiC Composite Optics for IFE Applications W. Kowbel, MER Corp., Tucson, AZ And M. Tillack, UCSD, La Jolla, CA I. Introduction Inertial Fusion (IFE) optics presents a unique challenge. Ghoniem [1 laser optics. Figure 1. Current Design Concept for Al/SiC. MER has proposed a highly innovative solution

  13. Jock Conyngham is a Research Ecologist in the Environmental Laboratory of the Engineer Research and Development Center (ERDC), US Army Corps of

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Jock Conyngham is a Research Ecologist in the Environmental Laboratory of the Engineer Research and Development Center (ERDC), US Army Corps of Engineers. He received his bachelor's degree in anthropology and environmental studies from Dartmouth College and a Master in Forest Science and a Master of Philosophy from Yale

  14. design and development. The Corps is striving to be a leader in the sustainability movement, building to the USGBC Leadership in Energy and Environmental Design

    E-Print Network [OSTI]

    US Army Corps of Engineers

    of sustainability never before seen in Army facilities), reducing energy to comply with relevant federal energy.usace.army.mil https://casi.erdc.usace.army.mil/ Energy savings is a big part of the sustainability effortsdesign and development. The Corps is striving to be a leader in the sustainability movement

  15. S. Guha, J. Yang, A. Banerjee, K. Hoffman, S. Sugiyama, and J. Call United Solar Systems Corp., Troy, Michigan 48084 USA

    E-Print Network [OSTI]

    Deng, Xunming

    S. Guha, J. Yang, A. Banerjee, K. Hoffman, S. Sugiyama, and J. Call United Solar Systems Corp Conversion Devices, Inc., Troy, Michigan 48084 USA spectral-splitting, triple-junction a-S alloy solar cell deionized water rinsing baths, and an infrared drying oven. The clean, dry and dust-free web is next loaded

  16. Pollution prevention opportunity assessment of the United States Army Corps of Engineers Garrison Dam Hydroelectric Powerplant, Riverdale, North Dakota. Report for March-September 1994

    SciTech Connect (OSTI)

    Bowman, D.; Buschow, R.; Smith, J.

    1995-08-01

    The report describes the results of pollution prevention opportunity assessments conducted at a representative U.S. Army Corps of Engineers civil works dam and hydroelectric power plant. Recommended methods for reducing pollution resulting primarily from the operation of these facilities are addressed.

  17. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  18. Nominees for NSAC Members | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Nominations for NSAC Members Nuclear Science Advisory Committee (NSAC) NSAC Home Meetings Members ChargesReports Charter .pdf file (629KB) NP Committees of Visitors Federal...

  19. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  20. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  1. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  2. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  3. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  4. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  5. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  6. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  7. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  8. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  9. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  10. AQU 04 Portable Algae Flow Cytometer Team Members

    E-Print Network [OSTI]

    Soatto, Stefano

    AQU 04 Portable Algae Flow Cytometer Team Members · David Caron, Faculty · Han-Chieh Chang · Yu-Chong Tai, Faculty, PI* * Primary Contact Overview The portable algae flow cytometer is a project that aims to expedite research in algae biology using microfluid-based and state-of-the-art detection

  11. 2000: PUBLICATIONS WITH IRAM STAFF MEMBERS AS (CO-)AUTHORS

    E-Print Network [OSTI]

    RadioAstronomie Millimétrique, Institut de (IRAM)

    2000: PUBLICATIONS WITH IRAM STAFF MEMBERS AS (CO-)AUTHORS 815. NEW MOLECULES IN COMET C/1995 01, E. Gérard, B. Germain, M. Houde, D. Mehringer, R. Moreno, T.G. Paubert, H. Rauer 2000, A&A 353, 1101. Bachiller, S. Guilloteau, J.P. Maillard, A. Omont 2000, A&A 353, L25 817. CO DETECTION OF THE EXTREMELY RED

  12. ALPHABETICAL LISTING OF MEMBERS OF THE BOARD OF REGENTS

    E-Print Network [OSTI]

    Minnesota, University of

    Kellogg Davis 1874 - 1876 1883 - 1898 Anna O. Determan 1933 - 1935 Thomas W. Devine 2012 - Ronald S. Donaldson 1868 - 1871 Ignatius Donnelly 1860 - 1863 William B. Dosland 1979 - 1985 #12;ALPHABETICAL LISTING OF MEMBERS OF THE BOARD OF REGENTS June 8, 2015 Willis (Bill) K. Drake 1981 - 1987 Benjamin Du Bois 1937

  13. GIS and Spectral Soil Laboratory Key faculty member: Sabine Grunwald

    E-Print Network [OSTI]

    Ma, Lena

    GIS and Spectral Soil Laboratory Key faculty member: Sabine Grunwald Contact: Soil and Water information systems (GIS), geostatistical and statistical methods, space-time landscape modeling, remote laboratory. Available software include: MS Office Suite; MS SQL database; ArcGIS Suite (ESRI) including

  14. Independent Scientific Advisory Board: Member Resume David P. Philipp

    E-Print Network [OSTI]

    Independent Scientific Advisory Board: Member Resume David P. Philipp Appointed to Board: 1999. Claussen, and D. P. Philipp. Effect of population size structure on reproductive investment of male bluegill. North American Journal of Fisheries Management 17: 516-524. 1997 Philipp, D. P., C. A. Toline, D

  15. 2004: PUBLICATIONS WITH IRAM STAFF MEMBERS AS (CO-)AUTHORS

    E-Print Network [OSTI]

    RadioAstronomie Millimétrique, Institut de (IRAM)

    2004: PUBLICATIONS WITH IRAM STAFF MEMBERS AS (CO-)AUTHORS 1012. MASS-LOSS FROM DUSTY, LOW OUTFLOW. Cesaroni, L. Testi, C.M. Walmsley, S. Molinari, R. Neri, D. Shepherd, J. Brand, F. Palla, Q. Zhang 2004, A. Zuther, M. Krips, C. Straubmeier 2004, A&A 414, 497 1015. MOLECULAR GAS IN NUclei OF GAlaxies (NUGA) II

  16. Accessibility of Computer Science: A Reflection for Faculty Members

    E-Print Network [OSTI]

    O'Leary, Dianne P.

    Accessibility of Computer Science: A Reflection for Faculty Members Dianne P. O'Leary \\Lambda June. This document benefitted from helpful advice and references from Nora Sleumer and Timothy O'Leary. Copyright Dianne P. O'Leary, 1999 Version 1: June 1999 1 Picture Yourself: You are male, almost 20 years old, naive

  17. Login | Become a Member | Contact Us News Updates

    E-Print Network [OSTI]

    Elster, Charlotte

    Archives Announcements Contact APS News Physics Physics Today Capitol Hill Quarterly Other APS PublicationsLogin | Become a Member | Contact Us Journals APS News News Updates Issue Archives Features Email Print Share Physicists/Scientists This Month in Physics History Photo: Smithsonian Institution

  18. Study privately with members of Detroit Symphony Orchestra and

    E-Print Network [OSTI]

    Berdichevsky, Victor

    Study privately with members of Detroit Symphony Orchestra and Michigan Opera Theatre Orchestra Perform in the heart of Detroit's Midtown Cultural Center Qualify during your audition for talent campus is diverse. It's called Detroit. This program is for advanced performers who want intensive

  19. U.S. Nuclear Waste Technical Review Board Members

    E-Print Network [OSTI]

    Appendix A Appendix A U.S. Nuclear Waste Technical Review Board Members Jared L. Cohon, Ph.D.; Chairman On June 29, 1995, President Bill Clinton appointed Jared Cohon to the Nuclear Waste Technical, and Asia and on energy facil ity siting, including nuclear waste shipping and storage. In addition to his

  20. Agricultural Engineering and Socio-Economics Division Field Contents Member

    E-Print Network [OSTI]

    Banbara, Mutsunori

    Agricultural Engineering and Socio-Economics Division Field Contents Member Environmental Engineering for Water The main subjects in this research and educational field are as follows: hydrological cycle of river basin, characteristics of water environment with regard to water quantity and quality

  1. Work and Energy Simulation Name_______________________ Lab Worksheet Group member names__________________________________

    E-Print Network [OSTI]

    Winokur, Michael

    Work and Energy Simulation Name_______________________ Lab Worksheet Group member names://phet.colorado.edu, in a browser and click on the Go to the simulations button. Open Work, Energy, and Power on the left. This lab uses three of the simulations on this page, Masses and Springs, Energy Skate Park, and The Ramp. I

  2. NEW MARINE MEMBERS OF THE GENUS HEMISELMIS (CRYPTOMONADALES, CRYPTOPHYCEAE)1

    E-Print Network [OSTI]

    Lane, Chris

    NEW MARINE MEMBERS OF THE GENUS HEMISELMIS (CRYPTOMONADALES, CRYPTOPHYCEAE)1 Christopher E. Lane2 two species until 1967, when Butcher described seven new marine species mainly on the basis applying his classification and validating many of his species. As a result, marine strains are often

  3. NREL Furthers U.S. Marine Corps Air Station Miramar's Move Toward Net Zero Energy (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-02-01

    A 2008 report from the Defense Science Board concluded that critical missions at military bases are facing unacceptable risks from extended power losses. A first step in addressing this concern is to establish military bases that can produce as much energy as they use over the course of a year, a concept known as a "net zero energy installation" (NZEI). The National Renewable Energy Laboratory (NREL) has helped the U.S. Marine Corps Air Station (MCAS) Miramar, located north of San Diego, California, as it strives to achieve its NZE goal. In conjunction with the U.S. Department of Energy's Federal Energy Management Program (FEMP), NREL partnered with MCAS Miramar to standardize processes and create an NZEI template for widespread replication across the military.

  4. Packing in a tradition of recycling: Manufacturer-turned-recycler Free-Flow Packaging Corp. , Redwood City, Calif

    SciTech Connect (OSTI)

    White, K.M.

    1994-01-01

    Free-Flow Packaging Corp. recycles polystyrene. Loose-fill -- an industry name for expanded polystyrene (EPS) packaging modules, or what the public more commonly calls peanuts'' -- represents a material that can easily and economically be recycled over and over. The company manufactures a 100% recycled packaging peanut called FLO-PAK, as well as a variety of other EPS packaging products. Indeed, to date, Free-Flow Packaging has set up post-consumer EPS recycling operations at five of its 11 manufacturing facilities, both across the country and overseas. The corporation's original facility in Redwood City began this tradition when it first started processing industrial EPS scrap in 1978 and, later, pioneered the recycling of post-consumer EPS on site for use in its products in 1989. Now, only five years later, the result has produced a recycling operation that is truly successful, profitable, and closed-loop.

  5. Transcontinental Gas Pipeline Corp. v. Oil and Gas Board of Mississippi: the demise of state ratable-take requirements

    SciTech Connect (OSTI)

    Frankenburg, K.M.

    1988-01-01

    Natural gas was not widely used until the 1930s when the development of seamless pipe enabled gas to be delivered at high compression to markets far from the wellhead. Now the availability and relatively low cost of natural gas have resulted in its widespread use in both home heating and industry. Regulation of this important fuel is consequently a hotly debated issue. The scope and fundamental purpose of the Natural Gas and Policy Act of 1978 (NGPA) was recently the subject of the Supreme Court's opinion in Transcontinental Gas Pipeline Corp v. Oil and Gas Board of Mississippi (Transcontinental). In a five-to-four decision, the Court held that the NGPA pre-empted the enforcement of a state ratable-take requirement. This Note examines Justice Blackmun's majority opinion and the persuasive dissent presented by Justice Rehnquist in the court's decision. The effects of the decision, the Court's first interpretation of NPGA, will undoubtedly be quite significant.

  6. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  7. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  8. Standards-enabled Smart Grid for the Future Valeriy Vyatkin, Senior Member, IEEE, Gulnara Zhabelova, non-member,

    E-Print Network [OSTI]

    Ulieru, Mihaela

    . They will obtain direct financial benefits while promoting at the same time the growth of renewable energy sourcesWeb vision [2]. Since energy consumption by users and energy production by renewable energy sources1 Standards-enabled Smart Grid for the Future EnergyWeb Valeriy Vyatkin, Senior Member, IEEE

  9. Optimal Demand Response in DC Distribution Networks Hamed Mohsenian-Rad, Member, IEEE and Ali Davoudi, Member, IEEE

    E-Print Network [OSTI]

    Mohsenian-Rad, Hamed

    Optimal Demand Response in DC Distribution Networks Hamed Mohsenian-Rad, Member, IEEE and Ali first present an optimization-based foundation for demand response in DC distribution networks. Then, we devise a pricing mechanism to enforce optimal demand response in a distributed fashion. Simulation

  10. 617IEEE TRANSACTlONS ON MEDICAL IMAGING. YOL. 16. NO. S. OCTOBER 1997 Y. Ziya Ider,* Member,IEEE,and L. Tugan Muftuler, Member,IEEE

    E-Print Network [OSTI]

    Ider, Yusuf Ziya

    617IEEE TRANSACTlONS ON MEDICAL IMAGING. YOL. 16. NO. S. OCTOBER 1997 Y. Ziya Ider,* Member,IEEE,and L. Tugan Muftuler, Member,IEEE Abstract-Electric currents are applied to body in numerous

  11. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  12. Updated 24/02/2015 COURT AND COURT MEMBERS' REGISTER OF INTERESTS 2013/14

    E-Print Network [OSTI]

    Painter, Kevin

    - Pension trustee Director Molson Coors Brewing Company UK Executive team member to Wealth International TD

  13. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  14. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  15. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  16. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  17. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing, E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Chen, Weixi [State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ding, Ying, E-mail: Ying.Ding@glasgow.ac.uk [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  18. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  19. Electrical degradation mechanisms of RF power GaAs PHEMTs

    E-Print Network [OSTI]

    Villanueva, Anita A. (Anita Ariel), 1978-

    2007-01-01

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability ...

  20. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  1. Turbine blade squealer tip rail with fence members

    DOE Patents [OSTI]

    Little, David A

    2012-11-20

    A turbine blade includes an airfoil, a blade tip section, a squealer tip rail, and a plurality of chordally spaced fence members. The blade tip section includes a blade tip floor located at an end of the airfoil distal from the root. The blade tip floor includes a pressure side and a suction side joined together at chordally spaced apart leading and trailing edges of the airfoil. The squealer tip rail extends radially outwardly from the blade tip floor adjacent to the suction side and extends from a first location adjacent to the airfoil trailing edge to a second location adjacent to the airfoil leading edge. The fence members are located between the airfoil leading and trailing edges and extend radially outwardly from the blade tip floor and axially from the squealer tip rail toward the pressure side.

  2. Method for making an elastomeric member with end pieces

    DOE Patents [OSTI]

    Hoppie, L.O.; McNinch, J.H. Jr.; Nowell, G.C.

    1984-10-23

    A molding process is described for molding an elongated elastomeric member with wire mesh sleeves bonded to the ends. A molding preform of elastomeric material is positioned within a seamless mold cylinder, and the open ends of the wire mesh sleeves are mounted to end plug assemblies slidably received into the mold cylinder and positioned against the ends of the preform. A specialized profile is formed into surfaces of the respective end plug assemblies and by heating of the mold, the ends of the elastomeric preform are molded to the profile, as well as bonded to the reinforcing wire mesh sleeves. Vacuum is applied to the interior of the mold to draw outgassing vapors through relief spaces there through. The completed elastomeric member is removed from the mold cylinder by stretching, the consequent reduction in diameter enabling ready separation from the mold cylinder and removal thereof. 9 figs.

  3. Method for making an elastomeric member with end pieces

    DOE Patents [OSTI]

    Hoppie, Lyle O. (Birmingham, MI); McNinch, Jr., Joseph H. (Livonia, MI); Nowell, Gregory C. (Livonia, MI)

    1984-01-01

    A molding process for molding an elongated elastomeric member (60) with wire mesh sleeves (16) bonded to the ends (14). A molding preform (10) of elastomeric material is positioned within a seamless mold cylinder (26), and the open ends of the wire mesh sleeves (16) are mounted to end plug assemblies (30) slidably received into the mold cylinder (26) and positioned against the ends (14) of the preform (10). A specialized profile is formed into surfaces (44) of the respective end plug assemblies (30) and by heating of the mold (26), the ends (14) of the elastomeric preform (10) are molded to the profile, as well as bonded to the reinforcing wire mesh sleeves (16). Vacuum is applied to the interior of the mold to draw outgassing vapors through relief spaces therethrough. The completed elastomeric member (60) is removed from the mold cylinder (26) by stretching, the consequent reduction in diameter enabling ready separation from the mold cylinder (26) and removal thereof.

  4. Cyclooctanoid Natural Products Synthesis of eight-membered ring

    E-Print Network [OSTI]

    Stoltz, Brian M.

    Cyclooctanoid Natural Products Synthesis of eight-membered ring containing terpenoids Chris Henry Stoltz Group Literature Presentation June 15th, 2008 147 Noyes, 8:00 PM O O H H H plagiospirolide E Group Literature Group Meeting 2 April 2007 HO H OH O Br H O H O H OH OH H H O OH O O H O OH H OHH O O H

  5. URTAC Committee Members, 2007-2008 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCEDInstallers/ContractorsPhotovoltaicsStateofEnergy FuelFEDERALDepartment ofCommittee Members,

  6. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  7. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  8. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)

    SciTech Connect (OSTI)

    Yitamben, E.N.; Arena, D.; Lovejoy, T.C.; Pakhomov, A.B.; Heald, S.M.; Negusse, E.; Ohuchi, F.S.; Olmstead, M.A.

    2011-01-28

    Chromium-doped gallium sesquiselenide, Cr:Ga{sub 2}Se{sub 3}, is a member of a new class of dilute magnetic semiconductors exploiting intrinsic vacancies in the host material. The correlation among room-temperature ferromagnetism, surface morphology, electronic structure, chromium concentration, and local chemical and structural environments in Cr:Ga{sub 2}Se{sub 3} films grown epitaxially on silicon is investigated with magnetometry, scanning tunneling microscopy, photoemission spectroscopy, and x-ray absorption spectroscopy. Inclusion of a few percent chromium in Ga{sub 2}Se{sub 3} results in laminar, semiconducting films that are ferromagnetic at room temperature with a magnetic moment 4{micro}{sub B}/Cr. The intrinsic-vacancy structure of defected-zinc-blende {beta}-Ga{sub 2}Se{sub 3} enables Cr incorporation in a locally octahedral site without disrupting long-range order, determined by x-ray absorption spectroscopy, as well as strong overlap between Cr 3d states and the Se 4p states lining the intrinsic-vacancy rows, observed with photoemission. The highest magnetic moment per Cr is observed near the solubility limit of roughly one Cr per three vacancies. At higher Cr concentrations, islanded, metallic films result, with a magnetic moment that depends strongly on surface morphology. The effective valence is Cr{sup 3+} in laminar films, with introduction of Cr{sup 0} upon islanding. A mechanism is proposed for laminar films whereby ordered intrinsic vacancies mediate ferromagnetism.

  9. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  10. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    SciTech Connect (OSTI)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to ?190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from ?20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  11. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  12. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01

    assuming the material growth technology allows for all ofand a relatively immature growth technology, as well as theof the art for InGaN growth technology. Epitaxial growth of

  13. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Sztein, Alexander, E-mail: asztein@umail.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9?W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  14. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors 

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31

    production is projected to consume ~100,000 wafers per year by 2015 (Yole Development, “Power GaN – 2012 Edition”), this manufacturing breakthrough represents potential savings of ~$17 million per year....

  15. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  16. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigör, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  17. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  18. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  19. Lab-Corps: Creating Market Pathways for Laboratory Research (Fact Sheet), U.S. Department of Energy (DOE), Energy Efficiency & Renewable Energy (EERE)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuelsof EnergyApril 2014 | International NuclearKarenUpdatesLab-Corps

  20. MSC 2008 Research Conference Materials and Process Simulation Center (MSC)

    E-Print Network [OSTI]

    Goddard III, William A.

    , Aramco, Total, ENI Caltech Corporate Associates members 3M Company, Aerospace Corp., Amgen Inc, Astra