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1

INFOGRAPHIC: Wide Bandgap Semiconductors  

Office of Energy Efficiency and Renewable Energy (EERE)

Breakthrough material technology called wide bandgap (WBG) semiconductors can help reduce the amount of wasted heat, boost energy efficiency, improve reliability, reduce cost, and decrease system size in existing and future power electronics.

2

Photocell utilizing a wide-bandgap semiconductor material  

DOE Patents (OSTI)

A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.

Carlson, David E. (Yardley, PA); Williams, Brown F. (Princeton, NJ)

1984-06-05T23:59:59.000Z

3

Wide-Bandgap Semiconductors  

SciTech Connect

With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters. With the advent of the use of SiC devices it is imperative that models of these be made available in commercial simulators. This enables power electronic designers to simulate their designs for various test conditions prior to fabrication. To build an accurate transistor-level model of a power electronic system such as an inverter, the first step is to characterize the semiconductor devices that are present in the system. Suitable test beds need to be built for each device to precisely test the devices and obtain relevant data that can be used for modeling. This includes careful characterization of the parasitic elements so as to emulate the test setup as closely as possible in simulations. This report is arranged as follows: Chapter 2--The testing and characterization of several diodes and power switches is presented. Chapter 3--A 55-kW hybrid inverter (Si insulated gate bipolar transistor--SiC Schottky diodes) device models and test results are presented. A detailed description of the various test setups followed by the parameter extraction, modeling, and simulation study of the inverter performance is presented. Chapter 4--A 7.5-kW all-SiC inverter (SiC junction field effect transistors (JFET)--SiC Schottky diodes) was built and tested. The models built in Saber were validated using the test data and the models were used in system applications in the Saber simulator. The simulation results and a comparison of the data from the prototype tests are discussed in this chapter. Chapter 5--The duration test results of devices utilized in buck converters undergoing reliability testing are presented.

Chinthavali, M.S.

2005-11-22T23:59:59.000Z

4

Wide Bandgap Semiconductors: Pursuing the Promise  

Energy.gov (U.S. Department of Energy (DOE))

Wide bandgap semiconductor materials are more efficient than their silicon-based counterparts; making it possible to reduce weight, volume, and life-cycle costs in a wide range of power applications.

5

Opportunities for Wide Bandgap Semiconductor Power Electronics...  

Energy Savers (EERE)

Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen...

6

Wide Bandgap Semiconductors for Clean Energy Workshop  

Energy.gov (U.S. Department of Energy (DOE))

A workshop on Wide Bandgap (WBG) Semiconductors for Clean Energy (held July 25, 2012, in Chicago, Illinois) brought together stakeholders from industry and academia to discuss the technical status of WBG semiconductors. The workshop also explored emerging WBG market applications in clean energy and barriers to the development and widespread commercial use of WBG semiconductors. Improving the quality and reliability of WBG semiconductors—and reducing their manufacturing costs—could accelerate their use in automotive, power electronics, solid-state lighting, and other clean energy applications.

7

Wide Bandgap Semiconductors for Clean Energy Workshop Agenda  

Energy Savers (EERE)

Wide Bandgap Semiconductors for Clean Energy Workshop Wednesday, July 25, 2012 Hilton Rosemont O'Hare, Chicago, IL Introduction Wide bandgap (WBG) semiconductors operate at...

8

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronic...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for...

9

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronic...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power...

10

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications  

E-Print Network (OSTI)

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications with material composition over a range of 0.7 to 5 eV. This factor allows them to be used for optoelectronic. Improvement in growth quality and doping of GaN is needed to improve the performance of optoelectronics

Li, Mo

11

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications  

DOE Patents (OSTI)

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

2008-03-18T23:59:59.000Z

12

Wide Bandgap Semiconductors: Essential to Our Technology Future |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future January 15, 2014 - 8:00am Addthis Learn how wide bandgap semiconductors could impact clean energy technology and our daily lives. | Video by Sarah Gerrity and Matty Greene, Energy Department. Dr. Ernest Moniz Dr. Ernest Moniz Secretary of Energy What are the key facts? North Carolina State University will lead the Energy Department's new manufacturing innovation institute for the next generation of power electronics, focusing on wide bandgap (WBG) semiconductors. Building America's leadership in WBG semiconductor manufacturing while driving down the cost of the technology could lead to more affordable products for businesses and consumers, billions of dollars in energy

13

Sandia National Laboratories: wide-bandgap semiconductor  

NLE Websites -- All DOE Office Websites (Extended Search)

electroluminescence was first reported by H.J. Round in 1907, and the first light-emitting diode (LED) was reported by O.V. Losev in 1927. Not until the birth of semiconductor...

14

Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material  

DOE Patents (OSTI)

Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

Sopori, Bhushan; Rangappan, Anikara

2014-11-25T23:59:59.000Z

15

Electronic materials with a wide band gap: recent developments  

Science Journals Connector (OSTI)

Usually, semiconductors with a band gap Eg 3 eV or larger are called wide band gap materials. Their optical emission can span the whole of the visible spectrum, enabling the development of devices for solid-state lighting. In addition, a large Eg results in a high electrical breakthrough field, which is interesting for high-power electronics.

Klimm, D.

2014-08-29T23:59:59.000Z

16

Semiconductor Equipment and Materials International SEMI | Open Energy  

Open Energy Info (EERE)

Semiconductor Equipment and Materials International SEMI Semiconductor Equipment and Materials International SEMI Jump to: navigation, search Name Semiconductor Equipment and Materials International (SEMI) Place San Jose, California Zip 95134 2127 Product Global trade association, publisher and conference organiser representing the semiconductor and flat panel display equipment manufacturers. References Semiconductor Equipment and Materials International (SEMI)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor Equipment and Materials International (SEMI) is a company located in San Jose, California . References ↑ "Semiconductor Equipment and Materials International (SEMI)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_Equipment_and_Materials_International_SEMI&oldid=350739

17

Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications  

Energy.gov (U.S. Department of Energy (DOE))

Presentation slides from the DOE Fuel Cell Technologies Office webinar, Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications, held on October 21, 2014.

18

Semiconductor and Materials Company Inc SAMCO | Open Energy Information  

Open Energy Info (EERE)

and Materials Company Inc SAMCO and Materials Company Inc SAMCO Jump to: navigation, search Name Semiconductor and Materials Company Inc (SAMCO) Place Kyoto, Kyoto, Japan Zip 612-8443 Sector Solar Product Japanese manufactruer of semiconductor and solar manufacturing equipment such as etching, deposition and cleaning systems. References Semiconductor and Materials Company Inc (SAMCO)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor and Materials Company Inc (SAMCO) is a company located in Kyoto, Kyoto, Japan . References ↑ "Semiconductor and Materials Company Inc (SAMCO)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_and_Materials_Company_Inc_SAMCO&oldid=350738

19

Method for depositing high-quality microcrystalline semiconductor materials  

DOE Patents (OSTI)

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Guha, Subhendu (Bloomfield Hills, MI); Yang, Chi C. (Troy, MI); Yan, Baojie (Rochester Hills, MI)

2011-03-08T23:59:59.000Z

20

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications  

Energy.gov (U.S. Department of Energy (DOE))

Recording and text version of the Fuel Cell Technologies Office webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications," originally presented on October 21, 2014.

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications  

Energy.gov (U.S. Department of Energy (DOE))

The Energy Department will present a live webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications" on Tuesday, October 21, at 12:00 p...

22

System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors  

DOE Patents (OSTI)

A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

2013-10-22T23:59:59.000Z

23

Webinar October 21: Opportunities for Wide Bandgap Semiconductor...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

applications ranging from fuel cell powered material handling equipment to fuel cell electric vehicles for the consumer and mass transit sectors, as well as the development of...

24

Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide  

E-Print Network (OSTI)

Scientic findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last few ...

Pereira, LMC; Wahl, U

25

Webinar October 21: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications  

Energy.gov (U.S. Department of Energy (DOE))

The Energy Department will present a live webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications" on Tuesday, October 21, from 12:00 to 1:00 p.m. Eastern Daylight Time. Representatives of Cree Inc., leading innovators in the WBG electronics industry, will be presenting.

26

Recent progress in transparent oxide semiconductors: Materials and device application  

Science Journals Connector (OSTI)

This paper reviews our recent research progress on new transparent conductive oxide (TCO) materials and electronic and optoelectronic devices based on these materials. First, described are the materials including p-type materials, deep-UV transparent TCO(?-Ga2O3), epitaxially grown ITO with atomically flat surface, transparent electrochromic oxide (NbO2F), amorphous TCOs, and nanoporous semiconductor 12CaO · 7Al2O3. Second, presented are TCO-based electronic/optoelectronic devices realized to date, UV/blue LED and UV-sensors based on transparent pn junction and high performance transparent TFT using n-type TCO as an n-channel. Finally, unique optoelectronic properties (p-type degenerate conduction, transfer doping of carriers, RT-stable exciton, and large optical nonlinearity) originating from 2D-electronic nature in p-type layered oxychalcogenides are summarized along with the fabrication method of epitaxial thin films of these materials.

Hideo Hosono

2007-01-01T23:59:59.000Z

27

Neutron detection using boron gallium nitride semiconductor material  

SciTech Connect

In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

2014-03-01T23:59:59.000Z

28

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents (OSTI)

A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

Sopori, Bhushan L. (Denver, CO); Allen, Larry C. (Arvada, CO); Marshall, Craig (Littleton, CO); Murphy, Robert C. (Golden, CO); Marshall, Todd (Littleton, CO)

1998-01-01T23:59:59.000Z

29

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents (OSTI)

A method and apparatus are disclosed for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby. 44 figs.

Sopori, B.L.; Allen, L.C.; Marshall, C.; Murphy, R.C.; Marshall, T.

1998-05-26T23:59:59.000Z

30

ECE 344--Semiconductor Devices & Materials ECE Department, UMass Amherst  

E-Print Network (OSTI)

Topics: Fundamentals of Semiconductors; Theory of Electrical Conduction; Device Operations (See "Class

Massachusetts at Amherst, University of

31

ESS 2012 Peer Review - Engineered Gate Oxides for Wide Bandgap Semiconductor MOSFETs - Jon Ihlefeld, SNL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-5 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -6 -4 -2 0 2 4 6 8 10 |J Leakage | (A-cm -2 ) Semiconductor Voltage (V) Engineered Gate Oxides for Wide Bandgap S emiconductor M OSFETs* Jon I hlefeld, M ichael B rumbach, S andeepan D asGupta, and Stanley AtciEy Sandia NaGonal Laboratories *Sponsored b y t he U .S. D epartment o f E nergy's O ffice o f E lectricity E nergy S torage Systems P rogram jihlefe@sandia.gov, 505---844---3162; s atciE@sandia.gov, 505---284---2701 Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND No. 2011-XXXXP Cooling Power electronics Energy storage Energy storage -V gate Low defect oxide Metal gate Wide

32

System for characterizing semiconductor materials and photovoltaic device  

DOE Patents (OSTI)

Apparatus for detecting and mapping defects in the surfaces of polycrystalline material in a manner that distinguishes dislocation pits from grain boundaries includes a first laser of a first wavelength for illuminating a wide spot on the surface of the material, a second laser of a second relatively shorter wavelength for illuminating a relatively narrower spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate raster mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. A reflectance measurement of the piece of material is obtained by adding together the signals from the optical detection devices. In the case where the piece of material includes a photovoltaic device, the current induced in the device by the illuminating light can be measured with a current sensing amplifier after the light integrating sphere is moved away from the device. 22 figs.

Sopori, B.L.

1996-12-03T23:59:59.000Z

33

Compositions of doped, co-doped and tri-doped semiconductor materials  

DOE Patents (OSTI)

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

Lynn, Kelvin (Pullman, WA); Jones, Kelly (Colfax, WA); Ciampi, Guido (Watertown, MA)

2011-12-06T23:59:59.000Z

34

Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications  

Science Journals Connector (OSTI)

Materials for optoelectronics give a fascinating variety of issues to consider. Increasingly important are white light emitting diode (LED) and solar cell materials. Profound energy savings can be done by addressing new materials. White light emitting diodes are becoming common in our lighting scene. There is a great energy saving in the transition from the light bulb to white light emitting diodes via a transition of fluorescent light tubes. However, the white LEDs still suffer from a variety of challenges in order to be in our daily use. Therefore there is a great interest in alternative lighting solutions that could be part of our daily life. All materials create challenges in fabrication. Defects reduce the efficiency of optical transitions involved in the light emitting diode materials. The donor-acceptor co-doped SiC is a potential light converter for a novel monolithic all-semiconductor white LED. In spite of considerable research, the internal quantum efficiency is far less than theoretically predicted and is likely a fascinating scientific field for studying materials growth, defects and optical transitions. Still, efficient Si-based light source represents an ongoing research field in photonics that requires high efficiency at room temperature, wavelength tuning in a wide wavelength range, and easy integration in silicon photonic devices. In some of these devices, rare earth doped materials is considered as a potential way to provide luminescence spanning in a wide wavelength range. Divalent and trivalent oxidation states of Eu provide emitting centers in the visible region. In consideration, the use of Eu in photonics requires Eu doped thin films that are compatible with CMOS technology but for example faces material science issues like a low Eu solid solubility in silica. Therefore approaches aim to obtain efficient light emission from silicon oxycarbide which has a luminescence in the visible range and can be a host material for rare earth ions. The silicon oxycarbide material can provide potential applications of the Eu luminescent materials to challenging conditions like high temperatures or aggressive environments where the silica has weaknesses. In some approaches, silicon rich silicon oxide that contain silicon nanoclusters emit red to near infrared luminescence due to quantum confinement effects while luminescence at shorter wavelength is difficult due to the interplay of defects and quantum confinement effects. In addition it is applicable as low-k dielectric, etch-stop and passivation layers. It also has an optical band-gap that is smaller than that of SiO2 which may facilitate carrier injection at lower voltages that is suitable for optoelectronics. From materials perspective of emerging materials, it seems distant to consider system related issues. The future demands on communication and lighting devices require higher information flows in modernized optical devices, for example by replacing electrical interconnects with their optical counterparts and tunable backgrounds filters for integrated optics or photonics applications. However, there are materials issues related to such device performance, for example by a non-linearity, that provide the possibility for selective removal or addition of wavelengths using hetero structures in which one side of the structure enhances the light-to-dark sensitivity of long and medium wavelength channels and diminish others, and an opposite behavior in other face of the structure. Certainly materials may be applied in various innovative ways to provide new performances in devices and systems. In any materials and device evaluation, reliability issues in passivation and packaging of semiconductor device structures provide a base knowledge that may be used to evaluate new concepts. Fundamental aspects of dielectric constant, bandgap and band offsets between the valence and conduction band edges between the passivation layer and the semiconductor create a foundation for understanding the device performance. In relation to these, the surface pre-treatment and deposit

Peter Wellmann; Mikael Syv?j?rvi; Haiyan Ou

2014-01-01T23:59:59.000Z

35

Dopant type and/or concentration selective dry photochemical etching of semiconductor materials  

DOE Patents (OSTI)

Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p-type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Ashby, C.R.H.; Dishman, J.L.

1985-10-11T23:59:59.000Z

36

Dopant type and/or concentration selective dry photochemical etching of semiconductor materials  

DOE Patents (OSTI)

A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

1987-01-01T23:59:59.000Z

37

L-asparagine crystals with wide gap semiconductor features: Optical absorption measurements and density functional theory computations  

SciTech Connect

Results of optical absorption measurements are presented together with calculated structural, electronic, and optical properties for the anhydrous monoclinic L-asparagine crystal. Density functional theory (DFT) within the generalized gradient approximation (GGA) including dispersion effects (TS, Grimme) was employed to perform the calculations. The optical absorption measurements revealed that the anhydrous monoclinic L-asparagine crystal is a wide band gap material with 4.95 eV main gap energy. DFT-GGA+TS simulations, on the other hand, produced structural parameters in very good agreement with X-ray data. The lattice parameter differences ?a, ?b, ?c between theory and experiment were as small as 0.020, 0.051, and 0.022 Å, respectively. The calculated band gap energy is smaller than the experimental data by about 15%, with a 4.23 eV indirect band gap corresponding to Z???? and Z???? transitions. Three other indirect band gaps of 4.30 eV, 4.32 eV, and 4.36 eV are assigned to ?3 ???, ?1 ???, and ?2 ??? transitions, respectively. ?-sol computations, on the other hand, predict a main band gap of 5.00 eV, just 50 meV above the experimental value. Electronic wavefunctions mainly originating from O 2p–carboxyl, C 2p–side chain, and C 2p–carboxyl orbitals contribute most significantly to the highest valence and lowest conduction energy bands, respectively. By varying the lattice parameters from their converged equilibrium values, we show that the unit cell is less stiff along the b direction than for the a and c directions. Effective mass calculations suggest that hole transport behavior is more anisotropic than electron transport, but the mass values allow for some charge mobility except along a direction perpendicular to the molecular layers of L-asparagine which form the crystal, so anhydrous monoclinic L-asparagine crystals could behave as wide gap semiconductors. Finally, the calculations point to a high degree of optical anisotropy for the absorption and complex dielectric function, with more structured curves for incident light polarized along the 100 and 101 directions.

Zanatta, G.; Gottfried, C. [Departamento de Bioquímica, Universidade Federal do Rio Grande do Sul, 90035-003 Porto Alegre-RS (Brazil)] [Departamento de Bioquímica, Universidade Federal do Rio Grande do Sul, 90035-003 Porto Alegre-RS (Brazil); Silva, A. M. [Universidade Estadual do Piauí, 64260-000 Piripiri-Pi (Brazil)] [Universidade Estadual do Piauí, 64260-000 Piripiri-Pi (Brazil); Caetano, E. W. S., E-mail: ewcaetano@gmail.com [Instituto de Educação, Ciência e Tecnologia do Ceará, 60040-531 Fortaleza-CE (Brazil)] [Instituto de Educação, Ciência e Tecnologia do Ceará, 60040-531 Fortaleza-CE (Brazil); Sales, F. A. M.; Freire, V. N. [Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza-CE (Brazil)] [Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza-CE (Brazil)

2014-03-28T23:59:59.000Z

38

Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications  

Science Journals Connector (OSTI)

Electronic and photonic information technology and renewable energy alternatives, such as solar energy, fuel cells and batteries, have now reached an advanced stage in their development. Cost-effective improvements to current technological approaches have made great progress, but certain challenges remain. As feature sizes of the latest generations of electronic devices are approaching atomic dimensions, circuit speeds are now being limited by interconnect bottlenecks. This has prompted innovations such as the introduction of new materials into microelectronics manufacturing at an unprecedented rate and alternative technologies to silicon CMOS architectures. Despite the environmental impact of conventional fossil fuel consumption, the low cost of these energy sources has been a long-standing economic barrier to the development of alternative and more efficient renewable energy sources, fuel cells and batteries. In the face of mounting environmental concerns, interest in such alternative energy sources has grown. It is now widely accepted that nanotechnology offers potential solutions for securing future progress in information and energy technologies. The Canadian Semiconductor Technology Conference (CSTC) forum was established 25 years ago in Ottawa as an important symbol of the intrinsic strength of the Canadian semiconductor research and development community, and the Canadian semiconductor industry as a whole. In 2007, the 13th CSTC was held in Montreal, moving for the first time outside the national capital region. The first three meetings in the series of 'Nano and Giga Challenges in Electronics and Photonics'— NGCM2002 in Moscow, NGCM2004 in Krakow, and NGC2007 in Phoenix— were focused on interdisciplinary research from the fundamentals of materials science to the development of new system architectures. In 2009 NGC2009 and the 14th Canadian Semiconductor Technology Conference (CSTC2009) were held as a joint event, hosted by McMaster University (10–14 August, Hamilton, Ontario, Canada) and the scope was expanded to include renewable energy research and development. This special issue of Nanotechnology is devoted to a better understanding of the function and design of semiconductor devices that are relevant to information technology (both electronics and photonics based) and renewable energy applications. The papers contained in this special issue are selected from the NGC/CSTC2009 symposium. Among them is a report by Ray LaPierre from McMaster University and colleagues at the University of Waterloo in Canada on the ability to manipulate single spins in nanowire quantum bits. The paper also reports the development of a testbed of a few qubits for general quantum information processing tasks [1]. Lower cost and greater energy conversion efficiency compared with thin film devices have led to a high level of activity in nanowire research related to photovoltaic applications. This special issue also contains results from an impedance spectroscopy study of core–shell GaAs nanowires to throw light on the transport and recombination mechanisms relevant to solar cell research [2]. Information technology research and renewable energy sources are research areas of enormous public interest. This special issue addresses both theoretical and experimental achievements and provides a stimulating outlook for technological developments in these highly topical fields of research. References [1] Caram J, Sandoval C, Tirado M, Comedi D, Czaban J, Thompson D A and LaPierre R R 2101 Nanotechnology 21 134007 [2] Baugh J, Fung J S and LaPierre RR 2010 Nanotechnology 21 134018

Stephen Goodnick; Anatoli Korkin; Predrag Krstic; Peter Mascher; John Preston; Alex Zaslavsky

2010-01-01T23:59:59.000Z

39

Photons, Electrons and Holes: Fundamentals of Photocatalysis with Semiconductors  

Science Journals Connector (OSTI)

Although not all the heterogeneous photocatalysts are semiconductors, this type of solids represents, by far, the most representative and widely investigated photoactive materials. For that reason, the fundamentals

Juan Manuel Coronado

2013-01-01T23:59:59.000Z

40

Final Report: Laser-Material Interactions Relevant to Analytic Spectroscopy of Wide Band Gap Materials  

SciTech Connect

We summarize our studies aimed at developing an understanding of the underlying physics and chemistry in terms of laser materials interactions relevant to laser-based sampling and chemical analysis of wide bandgap materials. This work focused on the determination of mechanisms for the emission of electrons, ions, atoms, and molecules from laser irradiation of surfaces. We determined the important role of defects on these emissions, the thermal, chemical, and physical interactions responsible for matrix effects and mass-dependent transport/detection. This work supported development of new techniques and technology for the determination of trace elements contained such as nuclear waste materials.

Dickinson, J. T. [Washington State University] [Washington State University

2014-04-05T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Transition-metal silicides as materials for magnet-semiconductor heterostructures*  

E-Print Network (OSTI)

Transition-metal silicides as materials for magnet-semiconductor heterostructures* Peter Kratzer as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the 001 surface retains the half-metallic character of the bulk if a fully Mn

42

Superatoms and Metal-Semiconductor Motifs for Cluster Materials  

SciTech Connect

A molecular understanding of catalysis and catalytically active materials is of fundamental importance in designing new substances for applications in energy and fuels. We have performed reactivity studies and ultrafast ionization and coulomb explosion studies on a variety of catalytically-relevant materials, including transition metal oxides of Fe, Co, Ni, Cu, Ti, V, Nb, and Ta. We demonstrate that differences in charge state, geometry, and elemental composition of clusters of such materials determine chemical reactivity and ionization behavior, crucial steps in improving performance of catalysts.

Castleman, A. W.

2013-10-11T23:59:59.000Z

43

Complex-wide representation of material packaged in 3013 containers  

SciTech Connect

The DOE sites packaging plutonium oxide materials packaged according to Department of Energy 3013 Standard (DOE-STD-3013) are responsible for ensuring that the materials are represented by one or more samples in the Materials Identification and Surveillance (MIS) program. The sites categorized most of the materials into process groups, and the remaining materials were characterized, based on the prompt gamma analysis results. The sites issued documents to identify the relationships between the materials packaged in 3013 containers and representative materials in the MIS program. These “Represented” documents were then reviewed and concurred with by the MIS Working Group. However, these documents were developed uniquely at each site and were issued before completion of sample characterization, small-scale experiments, and prompt gamma analysis, which provided more detailed information about the chemical impurities and the behavior of the material in storage. Therefore, based on the most recent data, relationships between the materials packaged in 3013 containers and representative materials in the MIS program been revised. With the prompt gamma analysis completed for Hanford, Rocky Flats, and Savannah River Site 3013 containers, MIS items have been assigned to the 3013 containers for which representation is based on the prompt gamma analysis results. With the revised relationships and the prompt gamma analysis results, a Master “Represented” table has been compiled to document the linkages between each 3013 container packaged to date and its representative MIS items. This table provides an important link between the Integrated Surveillance Program database, which contains information about each 3013 container to the MIS items database, which contains the characterization, prompt gamma data, and storage behavior data from shelf-life experiments for the representative MIS items.

Narlesky, Joshua E.; Peppers, Larry G.; Friday, Gary P.

2009-06-01T23:59:59.000Z

44

Heterogeneous reaction mechanisms and kinetics relevant to the CVD of semiconductor materials  

SciTech Connect

This report documents the state of the art in experimental and theoretical techniques for determining reaction mechanisms and chemical kinetics of heterogeneous reactions relevant to the chemical vapor deposition of semiconductor materials. It summarizes the most common ultra-high vacuum experimental techniques that are used and the types of rate information available from each. Several case studies of specific chemical systems relevant to the microelectronics industry are described. Theoretical methods for calculating heterogeneous reaction rate constants are also summarized.

Creighton, J.R.; Coltrin, M.E.

1994-03-01T23:59:59.000Z

45

Generic tool for modelling and simulation of semiconductor intrabay material handling system  

Science Journals Connector (OSTI)

Semiconductor manufacturing facilities are migrating to 300 mm technology, necessitating the implementation of automated material handling systems (AMHS) for a variety of ergonomic and safety considerations. A predictive tool, such as software simulation, is needed at the planning stage to estimate the performance of these relatively new systems. Two forms of AMHS are in general use in industry one which handles material within a group of machines (a bay) and one which transfers material between bays. This paper presents a generic tool for modelling and simulation of an intrabay AMHS. The model utilises a library of different blocks representing the different components of any intrabay material handling system, providing a tool that allows rapid building and analysis of an AMHS under different operating conditions. The ease of use of the system means that inexpert users have the ability to generate good models.

K.S. El-Kilany; P. Young; M.A. El Baradie

2004-01-01T23:59:59.000Z

46

Wide-Area Thermal Processing of Light-Emitting Materials  

SciTech Connect

Silicon carbide based materials and devices have been successfully exploited for diverse electronic applications. However, they have not achieved the same success as Si technologies due to higher material cost and higher processing temperatures required for device development. Traditionally, SiC is not considered for optoelectronic applications because it has an indirect bandgap. However, AppliCote Associates, LLC has developed a laser-based doping process which enables light emission in SiC through the creation of embedded p-n junctions. AppliCote laser irradiation of silicon carbide allows two different interaction mechanisms: (1) Laser conversion or induced phase transformation which creates carbon rich regions that have conductive properties. These conductive regions are required for interconnection to the light emitting semiconducting region. (2) Laser doping which injects external dopant atoms into the substrate that introduces deep level transition states that emit light when electrically excited. The current collaboration with AppliCote has focused on the evaluation of ORNL's unique Pulse Thermal Processing (PTP) technique as a replacement for laser processing. Compared to laser processing, Pulse Thermal Processing can deliver similar energy intensities (20-50 kW/cm2) over a much larger area (up to 1,000 cm2) at a lower cost and much higher throughput. The main findings of our investigation; which are significant for the realization of SiC based optoelectronic devices, are as follows: (1) The PTP technique is effective in low thermal budget activation of dopants in SiC similar to the laser technique. The surface electrical conductivity of the SiC samples improved by about three orders of magnitude as a result of PTP processing which is significant for charge injection in the devices; (2) The surface composition of the SiC film can be modified by the PTP technique to create a carbon-rich surface (increased local C:Si ratio from 1:1 to 2.9:1). This is significant as higher thermal and electrical conductivities of the surface layer are critical for a successful development of integrated optoelectronic devices; and (3) PTP provides low thermal budget dopant activation with a controlled depth profile, which can be exploited for high performance device development with selective patterning of the substrate. This project has successfully demonstrated that a low thermal budget annealing technique, such as PTP, is critical to defining the path for low cost electronic devices integrated on glass or polymeric substrates. This project is complimentary to the goals of the Solid State Lighting Program within DOE. It involves new manufacturing techniques for light emitting materials that are potentially much lower cost and energy efficient than existing products. Significant opportunity exists for further exploration of AppliCote's material and device technology in combination with ORNL's PTP technique, modeling, and characterization capabilities.

Duty, C.; Quick, N. (AppliCote Associates, LLC) [AppliCote Associates, LLC

2011-09-30T23:59:59.000Z

47

Stretchable semiconductor elements and stretchable electrical circuits  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Menard, Etienne (Durham, NC)

2009-07-07T23:59:59.000Z

48

III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.  

SciTech Connect

The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

2003-12-01T23:59:59.000Z

49

Nanocomposites of Semimetallic ErAs Nanoparticles Epitaxially Embedded within InGaAlAs-based Semiconductors for Thermoelectric Materials  

E-Print Network (OSTI)

GaAlAs-based Semiconductors for Thermoelectric Materials J.M.O. Zide', G. Zeng2, J.H. Bahk2, W. Kim3, S. L. Singer3, D array based on these materials for thermoelectric power generation; a power density > 1 W/cm2 is demonstrated with a temperature gradient of 120°C. Solid-state thermionics Efficient thermoelectric materials

50

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

2009-11-24T23:59:59.000Z

51

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2013-05-14T23:59:59.000Z

52

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04T23:59:59.000Z

53

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

2011-07-19T23:59:59.000Z

54

Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use  

DOE Patents (OSTI)

Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)

2000-01-01T23:59:59.000Z

55

Wide Bandgap Extrinsic Photoconductive Switches  

SciTech Connect

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

Sullivan, J S

2012-01-17T23:59:59.000Z

56

Method and apparatus for electron-only radiation detectors from semiconductor materials  

DOE Patents (OSTI)

A system for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and Hgl.sub.2, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.

Lund, James C. (429 Warwick Ave., San Leandro, CA 94577)

2000-01-01T23:59:59.000Z

57

WebPhysics: Delivering curricular material using the World Wide Web  

Science Journals Connector (OSTI)

The advent of interactive World Wide Web (WWW) networking with the HyperText Transmission Protocol (HTTP) offers an opportunity to develop and publish curricular material which does not tie up class time is available around the clock and fosters collaborative exploratory learning experiences across college boundaries. If it finds acceptance by students and faculty it will constitute a new pedagogical tool. WebPhysics is a collaborative effort that was established in 1995 to promote the design distribution testing and sharing of this type of curricular material. Samples of material currently available including hypertext lessons video clips modeling software on-line tests quizzes and enrichment will be presented. In addition sample lessons from the Cockpit Physics project from the United States Air Force Academy a web-based set of thirty-two introductory physics lessons written expressly to take advantage of the WWW paradigm are presented. Preliminary student reaction to this technology including the potential for collaborative learning through the publication of student work will be discussed.

Wolfgang Christian; Gregor Novak; Evelyn T. Patterson

1997-01-01T23:59:59.000Z

58

Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials  

DOE Patents (OSTI)

An apparatus for measuring the minority carrier lifetime of a semiconductor sample using radio-frequency coupling. The measuring apparatus includes an antenna that is positioned a coupling distance from a semiconductor sample which is exposed to light pulses from a laser during sampling operations. A signal generator is included to generate high frequency, such as 900 MHz or higher, sinusoidal waveform signals that are split into a reference signal and a sample signal. The sample signal is transmitted into a sample branch circuit where it passes through a tuning capacitor and a coaxial cable prior to reaching the antenna. The antenna is radio-frequency coupled with the adjacent sample and transmits the sample signal, or electromagnetic radiation corresponding to the sample signal, to the sample and receives reflected power or a sample-coupled-photoconductivity signal back. To lower impedance and speed system response, the impedance is controlled by limiting impedance in the coaxial cable and the antenna reactance. In one embodiment, the antenna is a waveguide/aperture hybrid antenna having a central transmission line and an adjacent ground flange. The sample-coupled-photoconductivity signal is then transmitted to a mixer which also receives the reference signal. To enhance the sensitivity of the measuring apparatus, the mixer is operated to phase match the reference signal and the sample-coupled-photoconductivity signal.

Johnston, Steven W. (Golden, CO); Ahrenkiel, Richard K. (Lakewood, CO)

2002-01-01T23:59:59.000Z

59

Semiconductor bridge (SCB) detonator  

DOE Patents (OSTI)

The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

Bickes, Jr., Robert W. (Albuquerque, NM); Grubelich, Mark C. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

60

Semiconductor devices incorporating multilayer interference regions  

DOE Patents (OSTI)

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

E-Print Network 3.0 - area semiconductor laser Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

areas of semiconductor... for conducting research on wide bandgap semiconductor optoelectronics in my research group, within the Center... bandgap III-Nitride semiconductor...

62

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV�s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

63

Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods  

SciTech Connect

Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

LeToquin, Ronan P; Tong, Tao; Glass, Robert C

2014-12-30T23:59:59.000Z

64

Thin Film Solid-State Reactions Forming Carbides as Contact Materials for Carbon-Containing Semiconductors  

SciTech Connect

Metal carbides are good candidates to contact carbon-based semiconductors (SiC, diamond, and carbon nanotubes). Here, we report on an in situ study of carbide formation during the solid-state reaction between thin films. The solid-state reaction was examined between 11 transition metals (W, Mo, Fe, Cr, V, Nb, Mn, Ti, Ta, Zr, and Hf) and an amorphous carbon layer. Capping layers (C or TiN) of different thicknesses were applied to prevent oxidation. Carbide formation is evidenced for nine metals and the phases formed have been identified (for a temperature ranging from 100 to 1100 C). W first forms W{sub 2}C and then WC; Mo forms Mo{sub 2}C; Fe forms Fe{sub 3}C; Cr first forms metastable phases Cr{sub 2}C and Cr{sub 3}C{sub 2-x}, and finally forms Cr{sub 3}C{sub 2}; V forms VC{sub x}; Nb transforms into Nb{sub 2}C followed by NbC; Ti forms TiC; Ta first forms Ta{sub 2}C and then TaC; and Hf transforms into HfC. The activation energy for the formation of the various carbide phases has been obtained by in situ x-ray diffraction.

Leroy,W.; Detavernier, C.; Van Meirhaeghe, R.; Lavoie, C.

2007-01-01T23:59:59.000Z

65

Microstructural and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials  

Science Journals Connector (OSTI)

Highly conductive phases have been generated on different polytypes of SiC substrates using a laser direct-write technique. Incorporation of both n-type and p-type impurities into the SiC substrates was accomplis...

I. A. Salama; N. R. Quick; A. Kar

2005-08-01T23:59:59.000Z

66

Method of passivating semiconductor surfaces  

DOE Patents (OSTI)

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Wanlass, Mark W. (Golden, CO)

1990-01-01T23:59:59.000Z

67

The synthesis of inorganic semiconductor nanocrystalline materials for the purpose of creating hybrid organic/inorganic light-emitting devices  

E-Print Network (OSTI)

Colloidal semiconductor nanocrystals (NCs) or quantum dots (QDs) can be synthesized to efficiently emit light from the ultraviolet, across the entire visible spectrum, and into the near infrared. This is now possible due ...

Steckel, Jonathan S. (Jonathan Stephen)

2006-01-01T23:59:59.000Z

68

Ferromagnetism in Oxide Semiconductors  

SciTech Connect

In order to become a practical technology, semiconductor spintronics requires the discovery and utilization of ferromagnetic semiconductors which exhibit spin polarization in the majority carrier band at and above room temperature. Intrinsic remanent magnetization would allow spin polarized currents to be propagated in such materials without the need for a continuous magnetic field. However, the discovery and understanding of such materials is proving to be a grand challenge in solid-state science. Indeed, one of the 125 critical unanswered scientific questions recently posed in Science magazine asks, “Is it possible to create magnetic semiconductors that work at room temperature?”

Chambers, Scott A.; Droubay, Timothy C.; Wang, Chong M.; Rosso, Kevin M.; Heald, Steve M.; Schwartz, S. A.; Kittilstved, Kevin R.; Gamelin, Daniel R.

2006-11-01T23:59:59.000Z

69

Technical Program Maintaining Consistent Conditions over a Wide Range of Material  

E-Print Network (OSTI)

of Material Deposition Rates in Beam-Based Additive Manufacturing: Jack Beuth1; Shane Esola1; Raymond Walker2 consideration for additive manufacturing and repair applications in the aerospace industry. To be successful Effect of Process Parameters on Electron Beam Melted (EBM) Additively Manufactured Components in Ti-6Al-4

Zabaras, Nicholas J.

70

Time-resolved THz studies of carrier dynamics in semiconductors, superconductors, and strongly-correlated electron materials  

SciTech Connect

Perhaps the most important aspect of contemporary condensed matter physics involves understanding strong Coulomb interactions between the large number of electrons in a solid. Electronic correlations lead to the emergence of new system properties, such as metal-insulator transitions, superconductivity, magneto-resistance, Bose-Einstein condensation, the formation of excitonic gases, or the integer and fractional Quantum Hall effects. The discovery of high-Tc superconductivity in particular was a watershed event, leading to dramatic experimental and theoretical advances in the field of correlated-electron systems. Such materials often exhibit competition between the charge, lattice, spin, and orbital degrees of freedom, whose cause-effect relationships are difficult to ascertain. Experimental insight into the properties of solids is traditionally obtained by time-averaged probes, which measure e.g., linear optical spectra, electrical conduction properties, or the occupied band structure in thermal equilibrium. Many novel physical properties arise from excitations out of the ground state into energetically higher states by thermal, optical, or electrical means. This leads to fundamental interactions between the system's constituents, such as electron-phonon and electron-electron interactions, which occur on ultrafast timescales. While these interactions underlie the physical properties of solids, they are often only indirectly inferred from time-averaged measurements. Time-resolved spectroscopy, consequently, is playing an ever increasing role to provide insight into light-matter interaction, microscopic processes, or cause-effect relationships that determine the physics of complex materials. In the past, experiments using visible and near-infrared femtosecond pulses have been extensively employed, e.g. to follow relaxation and dephasing processes in metals and semiconductors. However, many basic excitations in strongly-correlated electron systems and nanoscale materials occur at lower energies. The terahertz (THz) regime is particularly rich in such fundamental resonances. This includes ubiquitous lattice vibrations and low-energy collective oscillations of conduction charges. In nanoscale materials, band structure quantization also yields novel infrared and THz transitions, including intersubband absorption in quantum wells. The formation of excitons in turn leads to low-energy excitations analogous to inter-level transitions in atoms. In transition-metal oxides, fundamental excitation gaps arise from charge pairing into superconducting condensates and other correlated states. This motivates the use of ultrafast THz spectroscopy as a powerful tool to study light-matter interactions and microscopic processes in nanoscale and correlated-electron materials.A distinct advantage of coherent THz pulses is that the amplitude and phase of the electric field can be measured directly, as the THz fields are coherent with the fs pulses from which they are generated. Using THz time-domain spectroscopy (THz-TDS), both the real and imaginary parts of the response functions (such as the dielectric function) are obtained directly without the need for Kramers?Kronig transforms. The THz response can also be expressed in terms of absorption and refractive index, or as the optical conductivity. The optical conductivity describes the current response of a many-body system to an electric field, an ideal tool to study conducting systems. A second important advantage is the ultrafast time resolution that results from the short temporal duration of the THz time-domain sources. In particular, optical-pump THz-probe spectroscopy enables a delicate probe of the transient THz conductivity after optical photoexcitation. These experiments can provide insight into quasiparticle interactions, phase transitions, or nonequilibrium dynamics. In this chapter we will provide many such examples. Since THz spectroscopy of solids is a quickly expanding field

Kaindl, Robert A.; Averitt, Richard D.

2006-11-14T23:59:59.000Z

71

Definition: Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Semiconductor Jump to: navigation, search Dictionary.png Semiconductor Any material that has a limited capacity for conducting an electric current. Certain semiconductors, including silicon, gallium arsenide, copper indium diselenide, and cadmium telluride, are uniquely suited to the photovoltaic conversion process.[1] View on Wikipedia Wikipedia Definition A semiconductor is a material which has electrical conductivity to a degree between that of a metal (such as copper) and that of an insulator (such as glass). Semiconductors are the foundation of modern solid state electronics, including transistors, solar cells, light-emitting diodes (LEDs), quantum dots and digital and analog integrated circuits. A semiconductor may have a number of unique properties, one of which is the

72

Spectroscopy of semiconductor materials  

NLE Websites -- All DOE Office Websites (Extended Search)

(CuAg) 3 VO 4 compounds and theoretically predicted that hole producers (CuAg- vacancies) will dominate hole killers (CuAg interstitials, O vacancies). We synthesized Cu 3...

73

Process for producing chalcogenide semiconductors  

DOE Patents (OSTI)

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Noufi, R.; Chen, Y.W.

1985-04-30T23:59:59.000Z

74

Variable temperature semiconductor film deposition  

DOE Patents (OSTI)

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Li, X.; Sheldon, P.

1998-01-27T23:59:59.000Z

75

Wide Bandgap Materials  

Energy.gov (U.S. Department of Energy (DOE))

2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

76

Wide Bandgap Materials  

Energy.gov (U.S. Department of Energy (DOE))

2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

77

Wide Bandgap Materials  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

proprietary, confidential, or otherwise restricted information 2011 U.S. DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer...

78

Wide Bandgap Materials  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

- Acquiring new prototype devices. - Building new gate drivers and test set- ups for power switches with fast switching times . * Total project funding - DOE 100% * FY08 - 432K...

79

Wide Bandgap Materials  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Program Targets WBG devices maybe the enabling technology to meet the VTP inverter targets: - 13.4 kWl, 3.3 kW and 14.1 kWkg * Industrial suppliers of SiC and GaN...

80

Wide Bandgap Materials  

Energy.gov (U.S. Department of Energy (DOE))

2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents (OSTI)

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2001-01-01T23:59:59.000Z

82

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents (OSTI)

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2002-01-01T23:59:59.000Z

83

Semiconductor-based optical refrigerator  

DOE Patents (OSTI)

Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

Epstein, Richard I. (Santa Fe, NM); Edwards, Bradley C. (Nekoosa, WI); Sheik-Bahae, Mansoor (Albuquerque, NM)

2002-01-01T23:59:59.000Z

84

Sandia National Labs: PCNSC: Research: Compound Semiconductor...  

NLE Websites -- All DOE Office Websites (Extended Search)

and chemistry foundations to advance the state-of-the-art compound semiconductor optoelectronic materials and devices. Our approach is based on a focused effort including...

85

Sandia National Labs: PCNSC: Departments: Semiconductor and Optical  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductor & Optical Sciences Semiconductor & Optical Sciences > Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering Research Jeff Nelson Jerry A. Simmons Sr. Manager Idabelle Idabelle Courtney Admin. Asst. Departments Semiconductor and Optical Sciences The Semiconductor and Optical Sciences Department oversees the operations of the following departments providing new scientific knowledge that can lead to technology solutions in the areas of: Compound semiconductor optoelectronic materials and devices Chemical science to materials technologies, emphasizing the science and engineering of Metal Organic Chemical Vapor Deposition (MOCVD) Remote sensing and detection of WMD proliferation activities

86

Opportunities for Wide Bandgap Semiconductor Power Electronics...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

cost components of the PEM electrolyzer system while catalyst is a key challenge for fuel cell stack cost. Fuel Cell Stack Cost* Cost Breakdown *For PEMFC Stack cost, 500,000...

87

Wide Bandgap Semiconductors: Pursuing the Promise  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

reducing losses by 50%. 2 Utility applications: WBG have the potential to reduce transformer size by a factor of ten or more. WBG-based power electronics could also accelerate...

88

Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical  

E-Print Network (OSTI)

rf plasma-assisted metalorganic chemical vapor deposition G. C. Chen, D.-C. Lim, S.-B. Lee, and J-derived plasma-assisted metalorganic chemical vapor deposition MOCVD , and have studied the electrical compounds have become promising functional materials for integrated circuits, flash memories, and solar

Boo, Jin-Hyo

89

Novel room temperature ferromagnetic semiconductors  

SciTech Connect

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

Gupta, Amita

2004-11-01T23:59:59.000Z

90

ADVERTISEMENT SEMICONDUCTORS  

E-Print Network (OSTI)

ADVERTISEMENT SEMICONDUCTORS: 07.14.2010 Nano-enabled Coating Makes Aircraft Invisible Humble paint... The oil-separating centrifuges will work, but they... MORE FROM IEEE SPECTRUM ROBOTICS: 06.16.2010 Robo.01.2006 Look Out, Beckham: Here Come the Robots At the "World Cup" for robots, the talk is that one day

Stryk, Oskar von

91

Tri-material multilayer coatings with high reflectivity and wide bandwidth for 25 to 50 nm extreme ultraviolet light  

SciTech Connect

Magnesium/silicon carbide (Mg/SiC) multilayers have been fabricated with normal incidence reflectivity in the vicinity of 40% to 50% for wavelengths in the 25 to 50 nm wavelength range. However many applications, for example solar telescopes and ultrafast studies using high harmonic generation sources, desire larger bandwidths than provided by high reflectivity Mg/SiC multilayers. We investigate introducing a third material, Scandium, to create a tri-material Mg/Sc/SiC multilayer allowing an increase the bandwidth while maintaining high reflectivity.

Aquila, Andrew; Salmassi, Farhad; Liu, Yanwei; Gullikson, Eric M.

2009-09-09T23:59:59.000Z

92

Peter Y. Yu, Manuel Cardona, Fundamentals of semiconductors; physics and materials properties, 3rd rev. and enlarged edn. (Advanced texts in physics).  

Science Journals Connector (OSTI)

Most of us consider semiconductors as a very technical subject, thinking of computer chips and all the electronic equipment in the lab and at home. ... some elaborate etching and deposition processes, but "Fundamentals

Walter Langel

2003-10-01T23:59:59.000Z

93

962 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 4, NO. 3, MAY 2014 Ultrabroadband and Wide-Angle Hybrid  

E-Print Network (OSTI)

962 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 4, NO. 3, MAY 2014 Ultrabroadband and Wide-Angle Hybrid) are essential to realizing efficiency gains for state-of- the-art multijunction photovoltaic devices approach. Index Terms--Biomimetics, optical films, photovoltaic cells, III­V semiconductor materials. I

Bowers, John

94

Preparation of a semiconductor thin film  

DOE Patents (OSTI)

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

95

Preparation of a semiconductor thin film  

DOE Patents (OSTI)

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

1998-01-27T23:59:59.000Z

96

Details in Semiconductors Gordon Conference, New London, NH, August 3-8, 2008  

SciTech Connect

Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in homogeneous and structured semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, with an increases emphasis on nanostructures as compared to previous conferences. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference deals with defects in a broad range of bulk and nanoscale electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and organic semiconductors. Presentations of state-of-the-art theoretical methods will contribute to a fundamental understanding of atomic-scale phenomena. The program consists of about twenty invited talks, with plenty of discussion time, and a number of contributed poster sessions. Because of the large amount of discussion time, the conference provides an ideal forum for dealing with topics that are new and/or controversial.

Shengbai Zhang and Nancy Ryan Gray

2009-09-16T23:59:59.000Z

97

Semiconductor wire array structures, and solar cells and photodetectors based on such structures  

DOE Patents (OSTI)

A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

2014-08-19T23:59:59.000Z

98

Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory  

SciTech Connect

Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

Mohanta, S. K.; Mishra, S. N. [Tata Institute of Fundamental Research (TIFR), Homi Bhabha Road, Mumbai 400005 (India)

2014-05-07T23:59:59.000Z

99

Semiconductor research capabilities at the Lawrence Berkeley Laboratory  

SciTech Connect

This document discusses semiconductor research capabilities (advanced materials, processing, packaging) and national user facilities (electron microscopy, heavy-ion accelerators, advanced light source). (DLC)

Not Available

1987-02-01T23:59:59.000Z

100

Holey Germanium - New Routes to Ordered Nanoporous Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

currently exploring a variety of applications for these materials, including nanoscale solar cells and adsorption based chemical sensors. Because the semiconductor surface is...

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

E-Print Network 3.0 - advanced semiconductor devices Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Northern Illinois University Collection: Engineering 39 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

102

Optical temperature indicator using thermochromic semiconductors  

DOE Patents (OSTI)

A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

Kronberg, J.W.

1995-01-01T23:59:59.000Z

103

Waste minimization in semiconductor processing  

SciTech Connect

The US semiconductor industry uses 5--7 thousand pounds of arsine annually. Fifty to eighty percent of the arsine used becomes a waste product, which requires abatement. Traditional methods of abatement are reviewed with an emphasis on dry chemical scrubbing. A variety of dry chemical scrubbing materials were evaluated for arsine capacity, using activated carbon as the baseline for comparison. Of the available technologies, dry chemical scrubbing is the most effective means of minimizing arsenic containing waste generated from semiconductor effluents. A copper oxide based media has been identified which has high capacity, high efficiency and treats the spectrum of gases used in MOCVD processes. Reclaim and recovery of spent scrubber media has the potential to drastically reduce arsenic waste from semiconductor manufacturing.

Hardwick, S.J.; Mailloux, J.C. [Novapure Corp., Danbury, CT (United States)

1994-12-31T23:59:59.000Z

104

106 nature materials | VOL 1 | OCTOBER 2002 | www.nature.com/naturematerials hereismuchcurrentinterestintheopticalpropertiesof semicon-  

E-Print Network (OSTI)

.Galliumnitride(GaN)isa wide-bandgap semiconductor of much practical interest, because it is widely used

Yang, Peidong

105

Optical temperature sensor using thermochromic semiconductors  

DOE Patents (OSTI)

Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

Kronberg, J.W.

1994-01-01T23:59:59.000Z

106

Web Growth of Semiconductors  

Science Journals Connector (OSTI)

A novel process for growth of diamond?lattice semiconductors is described and a model is proposed for the growth mechanism. For germanium the process yields extended thin flat sheets typically 1 cm wide and 0.1 mm thick of good crystalline quality and relatively flat {111} surfaces. The sheet or web freezes from a liquid film drawn up by surface tension between two coplanar dendrites which originate from a single seed and are grown from the melt simultaneously with the sheet. Resistivity throughout the sheet is quite uniform. Etching of germanium webs shows them to be essentially dislocation?free and does not reveal any microsegregation of impurities. Silicon and indium antimonide have also been grown in this manner.

S. O'Hara; A. I. Bennett

1964-01-01T23:59:59.000Z

107

Electrostatic screening by semiconductors  

E-Print Network (OSTI)

Electrostatic screening by semiconductors is studied, hics. applying the Thomas-Fermi theory. The semiconductor is treated as a medium with dielectric constant e due to vocalizable atoms, with force charge due to electrons. Two models...

Krcmar, Maja

2012-06-07T23:59:59.000Z

108

Semiconductor Nanowires for Energy Conversion Allon I. Hochbaum*,  

E-Print Network (OSTI)

Semiconductor Nanowires for Energy Conversion Allon I. Hochbaum*, and Peidong Yang* Department. Introduction: Role of Materials in Energy Conversion 527 2. Why Are Semiconductor Nanowires Special? 527 3 of Materials in Energy Conversion Between 2004 and 2030 the annual global consumption of energy is estimated

Wu, Zhigang

109

Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open Energy  

Open Energy Info (EERE)

Semiconductor formerly Bandwidth Semiconductor LLC Semiconductor formerly Bandwidth Semiconductor LLC Jump to: navigation, search Name Spire Semiconductor (formerly Bandwidth Semiconductor LLC) Place Hudson, New Hampshire Zip 3051 Product Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References Spire Semiconductor (formerly Bandwidth Semiconductor LLC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Spire Semiconductor (formerly Bandwidth Semiconductor LLC) is a company located in Hudson, New Hampshire . References ↑ "Spire Semiconductor (formerly Bandwidth Semiconductor LLC)" Retrieved from "http://en.openei.org/w/index.php?title=Spire_Semiconductor_formerly_Bandwidth_Semiconductor_LLC&oldid=351621"

110

Semiconductor radiation detector  

DOE Patents (OSTI)

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Bell, Zane W. (Oak Ridge, TN); Burger, Arnold (Knoxville, TN)

2010-03-30T23:59:59.000Z

111

Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors  

Science Journals Connector (OSTI)

In this chapter, it is first described how the surface science and engineering of the III–V compound semiconductors are relevant to developing the semiconductor-based materials, including bismuth (Bi) containi...

Pekka Laukkanen; Marko Punkkinen

2013-01-01T23:59:59.000Z

112

Life-cycle Assessment of Semiconductors  

E-Print Network (OSTI)

The international technology roadmap for semiconductors,The international technology roadmap for semiconductors:The international technology roadmap for semiconductors,

Boyd, Sarah B.

2009-01-01T23:59:59.000Z

113

Wide bandgap n-type and p-type semiconductor porous junction devices as photovoltaic cells This article has been downloaded from IOPscience. Please scroll down to see the full text article.  

E-Print Network (OSTI)

. Introduction Solar cells incorporating organic materials are interesting alternatives to conventional silicon solar cells because of their low production cost. Significant breakthroughs in solar cell performances artificial photovoltaic device. In a dye-sensitized solar cell the absorbing dye molecules lie at the large

114

Deposition method for producing silicon carbide high-temperature semiconductors  

DOE Patents (OSTI)

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

1987-01-01T23:59:59.000Z

115

Analysis of Lateritic Material from Cerro Impacto by Instrumental Neutron Activation Employing a Low-Energy Photon Semiconductor and a High-Energy Ge(Li) Detector  

Science Journals Connector (OSTI)

Nineteen elements were determined in four different grain size fractions of a bulk geological material from Cerro Impacto for a study of the physical (mechanical) concentration...

Labrecque, J J; Beusen, J M; Van Grieken, R E

1986-01-01T23:59:59.000Z

116

Materials  

NLE Websites -- All DOE Office Websites (Extended Search)

2 MAG LAB REPORTS Volume 18 No. 1 CONDENSED MATTER SCIENCE Technique development, graphene, magnetism & magnetic materials, topological insulators, quantum fl uids & solids,...

117

Laser Cooling of a Semiconductor by 40 Kelvin: An Optical Refrigerator Based on Cadmium Sulfide Nanoribbons  

E-Print Network (OSTI)

of semiconductors using CdS nanoribbons (or nanobelts) in this work. This net cooling effect is found: Optical refrigeration, Laser cooling of semiconductors, CdS nanobelts, anti-Stokes luminescence 1) doped crystals or glasses and direct bandgap semiconductors. Rare-earth doped materials were proposed

Xiong, Qihua

118

A High Through-put Combinatorial Growth Technique for Semiconductor Thin Film Search  

SciTech Connect

Conventional semiconductor material growth technique is costly and time-consuming. Here we developed a new method to growth semiconductor thin films using high through-put combinatorial technique. In this way, we have successfully fabricated tens of semiconductor libraries with high crystallinity and high product of {mu}{tau} for the purpose of radiation detection.

Ma, Z. X.; Hao, H. Y.; Xiao, P.; Oehlerking, L. J.; Liu, D. F.; Zhang, X. J.; Yu, K.-M.; Walukiewicz, W.; Mao, S. S. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Yu, P. Y. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States)

2011-12-23T23:59:59.000Z

119

Acoustoelectric Interactions in Piezoelectric Semiconductors  

Science Journals Connector (OSTI)

Piezoelectric semiconductors such as cadmium sulfide exhibit a strong coupling between conduction electrons that are present in the substance and acoustic waves that are propagated along certain directions in the material. This energy exchange mechanism is highly nonlinear, and thus the simultaneous introduction of several collinear acoustic waves into the substance generates new signals at the conbination (sum and difference) frequencies. A theoretical explanation of this interaction mechanism, based on consideration of the nonlinear cross term present in the current-density equation, has been developed, and the validity of this method of analysis has been tested and qualitatively confirmed through experimentation.

R. Mauro and W. C. Wang

1970-01-15T23:59:59.000Z

120

Semiconductor nanowires for photovoltaic and photoelectrochemical energy conversion  

SciTech Connect

Semiconductor nanowires (NW) possess several beneficial properties for efficient conversion of solar energy into electricity and chemical energy. Due to their efficient absorption of light, short distances for minority carriers to travel, high surface-to-volume ratios, and the availability of scalable synthesis methods, they provide a pathway to address the low cost-to-power requirements for wide-scale adaptation of solar energy conversion technologies. Here we highlight recent progress in our group towards implementation of NW components as photovoltaic and photoelectrochemical energy conversion devices. An emphasis is placed on the unique properties of these one-dimensional (1D) structures, which enable the use of abundant, low-cost materials and improved energy conversion efficiency compared to bulk devices.

Dasgupta, Neil; Yang, Peidong

2013-01-23T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

E-Print Network 3.0 - advanced electronic materials Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

University of Cambridge Collection: Materials Science 78 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

122

Invited paper History of Semiconductors  

E-Print Network (OSTI)

Abstract—The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and the theory of semiconductors up to the contemporary devices (SOI and multigate devices). Keywords—band theory, laser, Moore’s law, semiconductor, transistor.

Lidia ?ukasiak; Andrzej Jakubowski

123

Type-II quasi phase matching in periodically intermixed semiconductor superlattice waveguides  

E-Print Network (OSTI)

. Many semicon- ductors have nonlinear optical susceptibilities with values well in excess of conventional materials, such as lithium niobate. Semiconductors have an addi- tional advantage

124

E-Print Network 3.0 - ag-in-s ternary semiconductor Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Engineering 14 Semiconductor Materials S. K. Tewksbury Summary: and for optoelectronic devices. Optoelectronics has taken advantage of ternary and quaternary III-V...

125

Mixed Semiconductor Nanocrystal Compositions  

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Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors. Available for thumbnail of Feynman Center (505) 665-9090 Email Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors, wherein energy is transferred from the energy donor to the energy acceptor and wherein: the energy acceptor is a colloidal nanocrystal having a lower band gap energy than the energy donor; the energy donor and the energy acceptor are separated by a distance of 40 nm or less; wherein the average peak absorption energy of the acceptor is at least 20 meV greater than the average peak emission energy of the energy donor; and

126

Transition metal oxides on organic semiconductors Yongbiao Zhao a  

E-Print Network (OSTI)

semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including toward in simplifying the fabrication process of the organic optoelectronic devices. Ã? 2014 Elsevier B], have gained great attention because of their wide applications in optoelectronic devices composed

Demir, Hilmi Volkan

127

Sandia National Laboratories: Sandia Wide-Bandgap Semiconductor...  

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and Exhibition (EU PVSC) EC Top Publications Reference Model 5 (RM5): Oscillating Surge Wave Energy Converter Experimental Wave Tank Test for Reference Model 3 Floating- Point...

128

Materials  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Materials and methods are available as supplementary materials on Science Online. 16. W. Benz, A. G. W. Cameron, H. J. Melosh, Icarus 81, 113 (1989). 17. S. L. Thompson, H. S. Lauson, Technical Rep. SC-RR-710714, Sandia Nat. Labs (1972). 18. H. J. Melosh, Meteorit. Planet. Sci. 42, 2079 (2007). 19. S. Ida, R. M. Canup, G. R. Stewart, Nature 389, 353 (1997). 20. E. Kokubo, J. Makino, S. Ida, Icarus 148, 419 (2000). 21. M. M. M. Meier, A. Reufer, W. Benz, R. Wieler, Annual Meeting of the Meteoritical Society LXXIV, abstr. 5039 (2011). 22. C. B. Agnor, R. M. Canup, H. F. Levison, Icarus 142, 219 (1999). 23. D. P. O'Brien, A. Morbidelli, H. F. Levison, Icarus 184, 39 (2006). 24. R. M. Canup, Science 307, 546 (2005). 25. J. J. Salmon, R. M. Canup, Lunar Planet. Sci. XLIII, 2540 (2012). Acknowledgments: SPH simulation data are contained in tables S2 to S5 of the supplementary materials. Financial support

129

Emissivity Correcting Pyrometry of Semiconductor Growth  

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Emissivity Correcting Pyrometry of Semiconductor Growth Emissivity Correcting Pyrometry of Semiconductor Growth by W. G. Breiland, L. A. Bruskas, A. A. Allerman, and T. W. Hargett Motivation-Temperature is a critical factor in the growth of thin films by either chemical vapor deposition (CVD) or molecular beam epitaxy (MBE). It is particularly important in compound semiconductor growth because one is often challenged to grow materials with specific chemical compositions in order to maintain stringent lattice-matching conditions or to achieve specified bandgap values. Optical pyrometry can be used to measure surface temperatures, but the thin film growth causes significant changes in the emissivity of the surface, leading to severe errors in the pyrometer measurement. To avoid these errors, emissivity changes must be measured and

130

Thermal Conductivity of Polycrystalline Semiconductors and Ceramics  

E-Print Network (OSTI)

semiconductors and ceramics with desired thermalthermal conductivity of several polycrystalline semiconductors and ceramics,Thermal Conductivity of Polycrystalline Semiconductors and Ceramics

Wang, Zhaojie

2012-01-01T23:59:59.000Z

131

The construction industry is comprised of a wide range of businesses involved in engineering standards, building design, and the construction of various types of materials and  

E-Print Network (OSTI)

in engineering standards, building design, and the construction of various types of materials and structures-related impacts, such as high winds and flooding, influence the choice of site construction, building techniques completion timelines. A changing climate can lead contractors to build smarter structures that are more

132

Extracting hot carriers from photoexcited semiconductor nanocrystals  

SciTech Connect

This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

Zhu, Xiaoyang

2014-12-10T23:59:59.000Z

133

Center for Nanophase Materials Sciences (CNMS) - CNMS User Research  

NLE Websites -- All DOE Office Websites (Extended Search)

charge injection in organic semiconducting materials for improving the optoelectronic properties of organic semiconductor devices. Publication " Spin injection from...

134

Realization of Spin Gapless Semiconductors: The Heusler Compound Mn2CoAl  

Science Journals Connector (OSTI)

Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn2CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2?B. Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn2CoAl is not only suitable material for room temperature semiconductor spintronics, the robust spin polarization of the spin gapless semiconductors makes it very promising material for spintronics in general.

Siham Ouardi; Gerhard H. Fecher; Claudia Felser; Jürgen Kübler

2013-03-05T23:59:59.000Z

135

Modeling pulsed-laser melting of embedded semiconductor nanoparticles  

E-Print Network (OSTI)

Introduction Phase change materials are studied widely forsteps for possible phase change material applications. InPhase change applications require a method of reliably switching the material

Sawyer, C.A.

2012-01-01T23:59:59.000Z

136

Thermally robust semiconductor optical amplifiers and laser diodes  

DOE Patents (OSTI)

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Dijaili, Sol P. (Moraga, CA); Patterson, Frank G. (Danville, CA); Walker, Jeffrey D. (El Cerrito, CA); Deri, Robert J. (Pleasanton, CA); Petersen, Holly (Manteca, CA); Goward, William (Antioch, CA)

2002-01-01T23:59:59.000Z

137

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents (OSTI)

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

2014-01-28T23:59:59.000Z

138

Argonne licenses diamond semiconductor discoveries to AKHAN Technologies |  

NLE Websites -- All DOE Office Websites (Extended Search)

licenses diamond semiconductor discoveries to AKHAN Technologies licenses diamond semiconductor discoveries to AKHAN Technologies By Joseph Bernstein * By Jared Sagoff * March 4, 2013 Tweet EmailPrint LEMONT, Ill. - The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The Argonne-developed technology allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400 degrees Celsius. The combination of the Argonne's low-temperature diamond technology with AKHAN's Miraj Diamond(tm) process represents the state of the art in diamond semiconductor

139

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2013-03-12T23:59:59.000Z

140

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2010-09-21T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2011-10-18T23:59:59.000Z

142

Scientists seek nonlinear optical materials  

Science Journals Connector (OSTI)

Nonlinear optical materials seem about to do for light what semiconductors already have done for electricity. ... Successful development of these materials could mean big payoffs in telecommunications, data processing, nuclear fusion, and applications of lasers in commerce and industry generally. ...

1982-10-04T23:59:59.000Z

143

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof  

DOE Patents (OSTI)

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04T23:59:59.000Z

144

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

145

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

146

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

147

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

148

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

149

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

150

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

High Power Electronics Based on the 2-Dimensional Electron Gas in GaN High Power Electronics Based on the 2-Dimensional Electron Gas in GaN Heterostructures by S. R. Kurtz, A. A. Allerman, and D. Koleski Motivation-GaN-based electronics offer miniaturization potential of radical proportions for microwave power amplifiers. GaN's large bandgap, high breakdown field, high electron velocity, and excellent thermal properties have led to high electron mobility transistors (HEMT) with up to 10x the power density of GaAs and other traditional semiconductors at frequencies up to 20 GHz. Further contributing to the outstanding performance of GaN-based amplifiers is the highly conducting, 2-dimensional electron gas (2DEG) used for the HEMT channel. Intrinsic polarization and piezoelectric properties of GaN materials can produce a 2DEG at an

151

Kansas Advanced Semiconductor Project  

SciTech Connect

KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

2007-09-21T23:59:59.000Z

152

GaTe semiconductor for radiation detection  

DOE Patents (OSTI)

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

153

Center for Nanophase Materials Sciences (CNMS) - News  

NLE Websites -- All DOE Office Websites (Extended Search)

94720 6 Institute for Problems of Materials Science, National Academy of Science of Ukraine, Kiev, Ukraine 7 Institute of Semiconductor Physics, National Academy of Science of...

154

Single-photon imaging in complementary metal oxide semiconductor processes  

Science Journals Connector (OSTI)

...integrated in new materials, e.g. germanium-on-silicon...implemented as an active or as passive...bias of the cathode or the anode...A review of active and passive...voltage at the cathode to follow an...semiconductor material with decreasing...region. The cathode (in this case...whereas active quenching is...

2014-01-01T23:59:59.000Z

155

Semiconductor gamma radiation detectors: band structure effects in energy resolution  

E-Print Network (OSTI)

high precision and in a broad energy range, the number of created pairs N is just proportional (referred to as the pair excitation energy). For semiconductor materials the pair excitation energy becomes important in the search for materials with improved energy resolution. #12;Theoretical models used

Luryi, Serge

156

Methods of forming semiconductor devices and devices formed using such methods  

DOE Patents (OSTI)

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

2013-05-21T23:59:59.000Z

157

Semiconductor radiation detector  

DOE Patents (OSTI)

A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

Patt, Bradley E. (Sherman Oaks, CA); Iwanczyk, Jan S. (Los Angeles, CA); Tull, Carolyn R. (Orinda, CA); Vilkelis, Gintas (Westlake Village, CA)

2002-01-01T23:59:59.000Z

158

Freescale Semiconductor Successfully Implements an Energy Management System  

Energy.gov (U.S. Department of Energy (DOE))

This case study describes how Freescale Semiconductor implemented projects at its Oak Hill Fab plant in Austin, Texas, that reduced annual plant-wide energy consumption by 28 million kilowatt hours (kWh) of electricity and 26,000 million British thermal units (Btu) of natural gas between 2006 and 2009, saving more than $2 million each year.

159

Semiconductor P-I-N detector  

DOE Patents (OSTI)

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Sudharsanan, Rengarajan (53 Timber Line Dr., Nashua, NH 03062); Karam, Nasser H. (577 Lowell St., Lexington, MA 02173)

2001-01-01T23:59:59.000Z

160

High power semiconductor laser diode arrays  

Science Journals Connector (OSTI)

The cw optical power obtainable from semiconductor laser diodes has been extended to unprecedented levels in recent years through the use of multistripe arrays. By spreading out the optical power with more than 100 stripes single?facet cw output in exces of 5 Watts has been demonstrated and 500 mW cw is now commercially available. Recent improvements to array performance include: arrays up to 1 cm wide that generates quasi?cw (150 usec pulse) output in excesss of 11 Watts and a novel device structure which produces up to 215 mW cw in a single diffraction limited lobe.

Peter S. Cross

1986-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

High power semiconductor laser diode arrays  

SciTech Connect

The cw optical power obtainable from semiconductor laser diodes has been extended to unprecedented levels in recent years through the use of multistripe arrays. By spreading out the optical power with more than 100 stripes, single-facet, cw output in exces of 5 Watts has been demonstrated, and 500 mW cw is now commercially available. Recent improvements to array performance include: arrays up to 1 cm wide that generates quasi-cw (150 usec pulse) output in excesss of 11 Watts, and a novel device structure which produces up to 215 mW cw in a single diffraction limited lobe.

Cross, P.S.

1986-08-15T23:59:59.000Z

162

Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt  

SciTech Connect

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: 1. wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; 2. n-type semiconductors; 3.they exhibit well defined magnetic hysteresis loops and 4. their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A&M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of research by including investigations of Mn-FeTiO3, Mn-Fe2TiO5 and by producing a novel three terminal device capable of generating bipolar currents besides producing radiation resistant varistors and a magnetically switchable device. Furthermore we conclusively established the radiation hardness of the four modified iron titanates we studied. In all our publications, conference and seminar presentations, dissertations and theses sponsorship of DOE has been acknowledged

Dr. R. K. Pandey, Cudworth Endowed Professor (Professor Emeritus of The Unviersity of Alabama)

2008-11-24T23:59:59.000Z

163

Low temperature production of large-grain polycrystalline semiconductors  

DOE Patents (OSTI)

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Naseem, Hameed A. (Fayetteville, AR); Albarghouti, Marwan (Loudonville, NY)

2007-04-10T23:59:59.000Z

164

Theory and Design of Smith-Purcell Semiconductor Terahertz Sources  

E-Print Network (OSTI)

-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the “three-nitride” (III-N) family...-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the “three-nitride” (III-N) family...

Smith, Don DeeWayne

2013-12-06T23:59:59.000Z

165

Argonne CNM News: State-of-the-Art Diamond Semiconductor Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies, Inc., exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The method allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400°C, highly advantageous for integration with processed semiconductor electronic materials and resulting in the deposition of low-defect nanocrystalline diamond (NCD) thin films. The combination of CNM's low-temperature diamond technology with the AKHAN Miraj Diamond(tm) process represents the state of the art in diamond semiconductor thin-film technology.

166

Monte-Carlo simulations of light propagation in luminescent solar concentrators based on semiconductor nanoparticles  

E-Print Network (OSTI)

wavelengths, which can be more efficiently converted to electricity by a PV cell. To achieve this, most-remission events. This is also a big advantage over conventional single material semiconductor nanopar- ticles of semiconductor-based LSCs in detail we employ Monte Carlo simulations (see Sec. II) using the measured data

Ilan, Boaz

167

Fall-2003 PH-314 A. La Rosa I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR  

E-Print Network (OSTI)

Fall-2003 PH-314 A. La Rosa JUNCTIONS I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR of the JUNCTION V. FORWARD BIAS, REVERSE BIAS I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR MATERIALS Let III. CHEMICAL POTENTIAL (FERMI LEVEL) IV. COMPARISON of CHARGE-CARRIER POPULATION at EACH SIDE

La Rosa, Andres H.

168

Avalanche semiconductor radiation detectors  

SciTech Connect

Operation of novel avalanche semiconductor detector, produced on the basis of heterojunctions Si-SiC and Si-Si{sub x}O{sub y} is described. A uniform avalanche process with gain from 10{sup 3} to 10{sup 5} can be reached depending on the conductivity of SiC and Si{sub x}O{sub y} layers. Two types of avalanche photodetectors designed for applications in wavelength range 500--10,00 nm with quantum efficiency 60 {+-} 10% (650 nm) and 200--700 nm with quantum efficiency 60 {+-} 15% (450 nm) are presented.

Sadygov, Z.Y. [Joint Inst. for Nuclear Research, Dubna (Russian Federation)] [Joint Inst. for Nuclear Research, Dubna (Russian Federation); [Azerbaijan Academy of Sciences, Baku (Azerbaijan). Physics Inst.; Zheleznykh, I.M.; Kirillova, T.A. [Russian Academy of Sciences, Moscow (Russian Federation). Inst. for Nuclear Research] [Russian Academy of Sciences, Moscow (Russian Federation). Inst. for Nuclear Research; Malakhov, N.A.; Jejer, V.N. [Joint Inst. for Nuclear Research, Dubna (Russian Federation)] [Joint Inst. for Nuclear Research, Dubna (Russian Federation)

1996-06-01T23:59:59.000Z

169

Method for measuring the drift mobility in doped semiconductors  

DOE Patents (OSTI)

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

Crandall, R.S.

1982-03-09T23:59:59.000Z

170

Method Of Transferring Strained Semiconductor Structures  

NLE Websites -- All DOE Office Websites (Extended Search)

Of Transferring Strained Semiconductor Structures Of Transferring Strained Semiconductor Structures Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. June 25, 2013 Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having

171

Semiconductor Physics at the Optical Sciences Center  

Science Journals Connector (OSTI)

This talk reviews semiconductor physics experiments and theory at the Optical Sciences Center including optical bistability, femtosecond dynamics, as well as semiconductor laser...

Koch, Stephan W

172

Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study  

SciTech Connect

Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport mechanisms at the interface of graphene and semiconductors based on conventional semiconductor Schottky theory and a floating Fermi level of graphene. The contact barrier heights can be estimated through this model and be close to the values obtained from the experiments, which are lower than those of the metal/semiconductor contacts. A detailed analysis reveals that the barrier heights are as the function of the interface separations and dielectric constants, and are influenced by the interfacial states of semiconductors. Our calculations show how this behavior of lowering barrier heights arises from the Fermi level shift of graphene induced by the charge transfer owing to the unique linear electronic structure.

Zhong, Haijian; Liu, Zhenghui; Xu, Gengzhao; Shi, Lin; Fan, Yingmin; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Xu, Ke, E-mail: kxu2006@sinano.ac.cn; Wang, Jianfeng; Ren, Guoqiang [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-01-07T23:59:59.000Z

173

Semiconductor bridge: A plasma generator for the ignition of explosives  

SciTech Connect

Small metal bridgewires are commonly used to ignite energetic powders such as pyrotechnics, propellants, and primary or secondary explosives. In this paper we describe a new means for igniting explosive materials using a semiconductor bridge (SCB). When driven with a short (20 ..mu..s), low-energy pulse (less than 3.5 mJ), the SCB produces a hot plasma that ignites explosives. The SCB, a heavily n-doped silicon film, typically 100 ..mu..m long by 380 ..mu..m wide by 2 ..mu..m thick, is 30 times smaller in volume than a conventional bridgewire. SCB devices produce a usable explosive output in a few tens of microseconds and operate at one-tenth the input energy of metal bridgewires. In spite of the low energies for ignition, SCB devices are explosively safe. We describe SCB processing and experiments evaluating SCB operation. Also discussed are the SCB vaporization process, plasma formation, optical spectra from the discharge, heat transfer mechanisms from the SCB to the explosive powders, and SCB device applications.

Benson, D.A.; Larsen, M.E.; Renlund, A.M.; Trott, W.M.; Bickes R.W. Jr.

1987-09-01T23:59:59.000Z

174

Semiconductor bridge: A plasma generator for the ignition of explosives  

Science Journals Connector (OSTI)

Small metal bridgewires are commonly used to ignite energetic powders such as pyrotechnics propellants and primary or secondary explosives. In this paper we describe a new means for igniting explosive materials using a semiconductor bridge (SCB). When driven with a short (20 ?s) low?energy pulse (less than 3.5 mJ) the SCB produces a hot plasma that ignites explosives. The SCB a heavily n?doped silicon film typically 100 ?m long by 380 ?m wide by 2 ?m thick is 30 times smaller in volume than a conventional bridgewire. SCB devices produce a usable explosive output in a few tens of microseconds and operate at one?tenth the input energy of metal bridgewires. In spite of the low energies for ignition SCB devices are explosively safe. We describe SCB processing and experiments evaluating SCB operation. Also discussed are the SCB vaporization process plasma formation optical spectra from the discharge heat transfer mechanisms from the SCB to the explosive powders and SCB device applications.

D. A. Benson; M. E. Larsen; A. M. Renlund; W. M. Trott; R. W. Bickes Jr.

1987-01-01T23:59:59.000Z

175

Semiconductor bridge (SCB) igniter  

DOE Patents (OSTI)

In an explosive device comprising an explosive material which can be made to explode upon activation by activation means in contact therewith; electrical activation means adaptable for activating said explosive material such that it explodes; and electrical circuitry in operation association with said activation means; there is an improvement wherein said activation means is an electrical material which, at an elevated temperature, has a negative temperature coefficient of electrical resistivity and which has a shape and size and an area of contact with said explosive material sufficient that it has an electrical resistance which will match the resistance requirements of said associated electrical circuitry when said electrical material is operationally associated with said circuitry, and wherein said electrical material is polycrystalline; or said electrical material is crystalline and (a) is mounted on a lattice matched substrate or (b) is partially covered with an intimately contacting metallization area which defines its area of contact with said explosive material.

Bickes, Jr., Robert W. (Albuquerque, NM); Schwarz, Alfred C. (Albuquerque, NM)

1987-01-01T23:59:59.000Z

176

Photocatalysis Using Semiconductor Nanoclusters  

SciTech Connect

We report on experiments using nanosize MoS{sub 2} to photo-oxidize organic pollutants in water using visible light as the energy source. We have demonstrated that we can vary the redox potentials and absorbance characteristics of these small semiconductors by adjusting their size, and our studies of the photooxidation of organic molecules have revealed that the rate of oxidation increases with increasing bandgap (i.e. more positive valence band and more negative conduction band potentials). Because these photocatalysis reactions can be performed with the nanoclusters fully dispersed and stable in solution, liquid chromatography can be used to determine both the intermediate reaction products and the state of the nanoclusters during the reaction. We have demonstrated that the MoS{sub 2} nanoclusters remain unchanged during the photooxidation process by this technique. We also report on studies of MoS{sub 2} nanoclusters deposited on TiO{sub 2} powder.

Thurston, T.R.; Wilcoxon,J.P.

1999-01-21T23:59:59.000Z

177

Photoacoustic measurement of bandgaps of thermoelectric materials  

E-Print Network (OSTI)

Thermoelectric materials are a promising class of direct energy conversion materials, usually consisting of highly doped semiconductors. The key to maximizing their thermal to electrical energy conversion lies in optimizing ...

Ni, George (George Wei)

2014-01-01T23:59:59.000Z

178

Analysis of silicon carbide based semiconductor power devices and their application in power factor correction  

E-Print Network (OSTI)

cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. Material technologies superior to Si are needed for future power device developments. Silicon Carbide (SiC) based semiconductor devices...

Durrani, Yamin Qaisar

2005-11-01T23:59:59.000Z

179

Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor  

E-Print Network (OSTI)

We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this “old” semiconductor material used for the first transistor more than ...

Jifeng, Liu

180

Physics and simulation of transport processes in hybrid organic semiconductor devices  

E-Print Network (OSTI)

Organic semiconductors and nanomaterials promise to potentially form the basis for future efficient and cost-effective large area optoelectronic devices, such as lightemitting diodes and solar cells. Although these materials' ...

Rousseau, Ian Michael

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Toward a Unified Treatment of Electronic Processes in Organic Semiconductors  

SciTech Connect

A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: (1) the equilibrium free carrier density, nf, is a small fraction of the total charge density; (2) a superlinear increase in conductivity with doping density is universal; (3) nf increases with applied electric field; and (4) the carrier mobility is field-dependent regardless of crystallinity.

Gregg. B.A.

2005-01-01T23:59:59.000Z

182

Mathematical Modeling of Semiconductor Devices  

E-Print Network (OSTI)

fibers. · Optoelectronic emitters convert an electronic signal into light. Examples are light-emitting diodes (LED) used in displays and indication lambs and semiconductor lasers used in compact disk systems

Jüngel, Ansgar

183

Seebeck coefficient in organic semiconductors  

E-Print Network (OSTI)

Seebeck coefficient in organic semiconductors A dissertation submitted for the degree of Doctor of Philosophy Deepak Venkateshvaran Fitzwilliam College & Optoelectronics Group, Cavendish Laboratory University of Cambridge February 2014 “The end...

Venkateshvaran, Deepak

2014-07-01T23:59:59.000Z

184

Imaging of semiconductors using a flying laser spot scanning system  

E-Print Network (OSTI)

be obsezved in the wavelength vs. absorption coefficient curves shown in Figure 1 for both a direct and an indirect semiconductor material (gallium-arsenide and silicon). It is only in the direct absorption and subsequent generation of a hole electron pair... in wavelength of light used to generate carriers pro- vides some contzol over the depth of the material analyzed. Long wavelength energy (- 1 micrometer) penetrates deeply into silicon, while gallium phosphide is considered almost transparent for a typical...

Richardson, Thomas William

2012-06-07T23:59:59.000Z

185

Coated semiconductor devices for neutron detection  

DOE Patents (OSTI)

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

Klann, Raymond T. (Bolingbrook, IL); McGregor, Douglas S. (Whitmore Lake, MI)

2002-01-01T23:59:59.000Z

186

OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES  

SciTech Connect

This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

Grant, C D; Zhang, J Z

2007-09-28T23:59:59.000Z

187

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics  

DOE Patents (OSTI)

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

2014-05-20T23:59:59.000Z

188

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics  

DOE Patents (OSTI)

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Rogers, John A. (Champaign, IL); Meitl, Matthew (Raleigh, NC); Sun, Yugang (Naperville, IL); Ko, Heung Cho (Urbana, IL); Carlson, Andrew (Urbana, IL); Choi, Won Mook (Champaign, IL); Stoykovich, Mark (Dover, NH); Jiang, Hanqing (Urbana, IL); Huang, Yonggang (Glencoe, IL); Nuzzo, Ralph G. (Champaign, IL); Lee, Keon Jae (Tokyo, JP); Zhu, Zhengtao (Rapid City, SD); Menard, Etienne (Durham, NC); Khang, Dahl-Young (Seoul, KR); Kan, Seong Jun (Daejeon, KR); Ahn, Jong Hyun (Suwon, KR); Kim, Hoon-sik (Champaign, IL)

2012-07-10T23:59:59.000Z

189

Center for Nanophase Materials Sciences (CNMS) - CNMS User Research  

NLE Websites -- All DOE Office Websites (Extended Search)

3Lashkaryov Institute for Semiconductor Physics, National Academy of Science of Ukraine; 4Department of Materials Science and Engineering, Pennsylvania State University...

190

Center for Nanophase Materials Sciences (CNMS) - CNMS Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Ridge, TN, 37831 2 Institute of Semiconductor Physics, National Academy of Science of Ukraine,41, pr. Nauki, 03028 Kiev, Ukraine 3 Institute for Problems of Materials Science,...

191

Paul V. Braun and John A. Rogers Materials Research Laboratory...  

NLE Websites -- All DOE Office Websites (Extended Search)

epitaxy of high- performance III-V semiconductor materials. We have demonstrated optoelectronic functionality by fabricating a 3D photonic crystal LED, the rst- ever electrically...

192

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

0001 0001 Transport and Kinetic Processes in GaN Epitaxial Lateral Overgrowth M. E. Coltrin and C. C. Mitchell Motivation-GaN is a wide band gap semi- conductor with a broad range of potential appli- cations, e.g., high-temperature electronics, op- telectronics, chemical or biological sensors. GaN thin films usually have a high defect den- sity, leading to poor performance. Epitaxial Lat- eral Overgrowth (ELO) has been shown to greatly reduce defect densities, often by factors of 100 or more. We are conducting fundamental studies of GaN growth kinetics during ELO. Accomplishment-In ELO, a mask pattern of dielectric material is deposited on top of a GaN buffer layer. Further growth of GaN occurs se- lectively on exposed areas of the underlying buffer layer, and not on the dielectric material.

193

Nanostructured materials for hydrogen storage  

DOE Patents (OSTI)

A system for hydrogen storage comprising a porous nano-structured material with hydrogen absorbed on the surfaces of the porous nano-structured material. The system of hydrogen storage comprises absorbing hydrogen on the surfaces of a porous nano-structured semiconductor material.

Williamson, Andrew J. (Pleasanton, CA); Reboredo, Fernando A. (Pleasanton, CA)

2007-12-04T23:59:59.000Z

194

World Wide Chemistry  

Science Journals Connector (OSTI)

World Wide Chemistry ... Plutonium has been produced for the first time at Britain's Atomic Energy Research Establishment at Harwell. ... Indian Ore Reserves ...

G. ABRAHAMSON; RAFFAELE SANSONE

1949-04-11T23:59:59.000Z

195

Quasiferromagnetism in semiconductors  

SciTech Connect

Ferromagnetic hysteresis has been observed at room temperature in materials not consisting of elements commonly associated with ferromagnetism, such as Co, Ni, Fe, or Mn-containing alloys. In particular, we report on magnetic hysteresis seen in silicon prepared by two different techniques: ion implantation (Si and Ar) and neutron irradiation. Because the material investigated contains no ferromagnetic elements, we tentatively call it ''quasiferromagnetic.'' The paramagnetic defects present in these materials were investigated using electron paramagnetic resonance. We suggest that these defects are one of the factors responsible for the observed macroscopic magnetic hysteresis loop.

Dubroca, T.; Hack, J.; Hummel, R.E.; Angerhofer, A. [Department of Materials Science and Engineering, University of Florida, Rhines Hall room 106, Gainesville, Florida 32611 (United States); Department of Chemistry, University of Florida, P.O. Box 117200, Gainesville, Florida 32611 (United States)

2006-05-01T23:59:59.000Z

196

Method of making silicon on insalator material using oxygen implantation  

DOE Patents (OSTI)

The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

Hite, Larry R. (Dallas, TX); Houston, Ted (Richardson, TX); Matloubian, Mishel (Dallas, TX)

1989-01-01T23:59:59.000Z

197

Optical Properties and Potential Applications of Doped Semiconductor...  

NLE Websites -- All DOE Office Websites (Extended Search)

Optical Properties and Potential Applications of Doped Semiconductor Nanoparticles. Optical Properties and Potential Applications of Doped Semiconductor Nanoparticles. Abstract:...

198

Electromagnetic compatibility in semiconductor manufacturing  

SciTech Connect

Electromagnetic Interference (EMI) causes problems in semiconductor manufacturing facilities that range from nuisances to major disruptions of production. In many instances, these issues are addressed in a reactionary rather than proactive manner by individuals who do not have the experience or the equipment necessary to combat EMI problems in a timely, cost effective manner. This approach leads to expensive retrofits, reduced equipment availability, long recovery times, and in some cases, line yield impacts. The goal of electromagnetic compatibility (EMC) in semiconductor manufacturing is to ensure that semiconductor process, metrology, and support equipment operate as intended without being affected by electromagnetic disturbances either transmitted through air (radiated interference), or transferred into the equipment via a conductive media (conducted interference). Rather than being neglected until serious issues arise, EMC should be considered in the early stages of facility design, in order to gain the most benefit at the lowest cost.

Montoya, J.A. [Intel Corp., Hillsboro, OR (United States)

1995-12-31T23:59:59.000Z

199

Semiconductor nanocrystal-based phagokinetic tracking  

DOE Patents (OSTI)

Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

2014-11-18T23:59:59.000Z

200

Semiconductor electrode with improved photostability characteristics  

DOE Patents (OSTI)

An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

Frank, A.J.

1985-02-19T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Soft X-ray spectromicroscopy and its application to semiconductor microstructure characterization  

SciTech Connect

The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An ALS {mu}-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers.

Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z. [and others

1996-05-01T23:59:59.000Z

202

Semiconductor Radiation Detectors  

Science Journals Connector (OSTI)

...detector in which the material is not fully depleted. 284 SCIENCE, VOL. 170 (77 K), reduces...isotopes produced in fragmentation of uranium nuclei by 5-Gev protons as observed...staff of the U.S. De-partment of Health, Education, and Welfare National Air...

Fred S. Goulding; Yvonne Stone

1970-10-16T23:59:59.000Z

203

Monolayer Semiconductors Gilbert Arias  

E-Print Network (OSTI)

to be successfully and reliably isolated is graphene, which has received a lot of attention due to the fact, the electrical tunability and valley physics of these materials can be observed. 2 Monolayer Transistors 2 onto a tape, and then sticking this tape onto some kind of Silicon wafer. When the tape is peele

Washington at Seattle, University of - Department of Physics, Electroweak Interaction Research Group

204

the World Wide Web  

NLE Websites -- All DOE Office Websites (Extended Search)

technical report has been made electronically available on the World Wide Web through a contribution from Walter L. Warnick In honor of Enrico Fermi Leader of the first nuclear...

205

Hybrid high-temperature superconductor-semiconductor tunnel diode  

E-Print Network (OSTI)

We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+{\\delta} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal material junction, and similar to spectra obtained in scanning tunneling microscopy. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+{\\delta} combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials and quantum technology applications.

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

2013-01-09T23:59:59.000Z

206

Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode  

Science Journals Connector (OSTI)

We report the demonstration of hybrid high-Tc-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-Tc-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+? combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+? combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

2012-12-27T23:59:59.000Z

207

Mechanical scriber for semiconductor devices  

DOE Patents (OSTI)

A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

Lin, P.T.

1985-03-05T23:59:59.000Z

208

Wide Bandgap Power Electronics  

Office of Environmental Management (EM)

of WBG devices can significantly reduce cooling requirements. Reducing the 260 size of heat sinks, radiators, pumps and piping can result in cost savings from both a materials...

209

Catalytic photooxidation of pentachlorophenol using semiconductor nanoclusters  

SciTech Connect

Pentachlorophenol (PCP) is a toxic chlorinated aromatic molecule widely used as fungicide, a bactericide and a wood preservation, and thus ubiquitous in the environment. The authors report photo-oxidation of PCP using a variety of nanosize semiconductor metal oxides and sulfides in both aqueous and polar organic solvents and compare the photo-oxidation kinetics of these nanoclusters to widely studied bulk powders like Degussa P-25 TiO{sub 2} and CdS. They study both the light intensity dependence of PCP photooxidation for nanosize SnO{sub 2} and the size dependence of PCP photooxidation for both nanosize SnO{sub 2} and MoS{sub 2}. They find an extremely strong size dependence for the latter which they attribute to its size-dependent band gap and the associated change in redox potentials due to quantum confinement of the hole-electron pair. The authors show that nanosize MoS{sub 2} with a diameter of d=3.0 nm and an absorbance edge of {approximately}450 nm is a very effective photooxidation catalyst for complete PCP mineralization, even when using only visible light irradiation.

WILCOXON,JESS P.

2000-04-17T23:59:59.000Z

210

First-principles simulations of exciton diffusion in organic semiconductors  

Science Journals Connector (OSTI)

Exciton diffusion is crucial for the performance of organic semiconductors in photovoltaic and solid state lighting applications. We propose a first-principles approach that can predict exciton dynamics in organic semiconductors. The method is based on time-dependent density functional theory to describe the energy and many-body wave functions of excitons. Nonadiabatic ab initio molecular dynamics is used to calculate phonon-assisted transition rates between localized exciton states. Using Monte Carlo simulations, we determine the exciton diffusion length, lifetime, diffusivity, and harvesting efficiency in poly(3-hexylthiophene) polymers at different temperatures, which agree very well with the experiments. We find that exciton diffusion is primarily determined by the density of states of low-energy excitons. A widely speculated diffusion mechanism, namely an initial downhill migration followed by thermally activated migration, is confirmed and elucidated by the simulations. Some general guidelines for designing more efficient organic solar cells are obtained from the simulations.

Xu Zhang; Zi Li; Gang Lu

2011-12-22T23:59:59.000Z

211

Field of Expertise Materials Science  

E-Print Network (OSTI)

structure-property relationships through the characterisation of diverse materials to process optimisation and international research partners in order to keep Austrian high-technology industry, scientific production semiconductors Paper and physical chemistry principles of paper strength Metallic materials for energy applica

212

Joining of dissimilar materials  

DOE Patents (OSTI)

A method of joining dissimilar materials having different ductility, involves two principal steps: Decoration of the more ductile material's surface with particles of a less ductile material to produce a composite; and, sinter-bonding the composite produced to a joining member of a less ductile material. The joining method is suitable for joining dissimilar materials that are chemically inert towards each other (e.g., metal and ceramic), while resulting in a strong bond with a sharp interface between the two materials. The joining materials may differ greatly in form or particle size. The method is applicable to various types of materials including ceramic, metal, glass, glass-ceramic, polymer, cermet, semiconductor, etc., and the materials can be in various geometrical forms, such as powders, fibers, or bulk bodies (foil, wire, plate, etc.). Composites and devices with a decorated/sintered interface are also provided.

Tucker, Michael C; Lau, Grace Y; Jacobson, Craig P

2012-10-16T23:59:59.000Z

213

Fabrication of photonic band gap materials  

DOE Patents (OSTI)

A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microspheres, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microspheres therefrom. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microspheres may be polystyrene microspheres.

Constant, Kristen (Ames, IA); Subramania, Ganapathi S. (Ames, IA); Biswas, Rana (Ames, IA); Ho, Kai-Ming (Ames, IA)

2002-01-15T23:59:59.000Z

214

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents (OSTI)

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, R.B.

1987-05-01T23:59:59.000Z

215

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application  

DOE Patents (OSTI)

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Hansen, W.L.; Haller, E.E.

1980-09-19T23:59:59.000Z

216

PHYSICAL REVIEW B 90, 115415 (2014) Geometrically induced transitions between semimetal and semiconductor in graphene  

E-Print Network (OSTI)

and semiconductor in graphene Marc Dvorak and Zhigang Wu* Department of Physics, Colorado School of Mines, Golden of graphene remains an outstanding problem in nanoscience, which precludes the practical method of patterning graphene from being widely adopted for making graphene-based electronic and optoelectronic devices, because

Wu, Zhigang

217

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2012-08-07T23:59:59.000Z

218

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2011-10-11T23:59:59.000Z

219

E-Print Network 3.0 - advanced packaging materials Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

and Technology Council (WTERT) Collection: Renewable Energy 22 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

220

E-Print Network 3.0 - advanced materials development Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Laboratory Fossil Energy Program Collection: Fossil Fuels 84 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

E-Print Network 3.0 - advanced materials technology Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Center, University of Missouri-Rolla Collection: Engineering 16 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

222

E-Print Network 3.0 - advanced technological materials Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

Center, University of Missouri-Rolla Collection: Engineering 16 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

223

Photon Statistics of Semiconductor Light Sources.  

E-Print Network (OSTI)

??In recent years, semiconductor light sources have become more and more interesting in terms of applications due to their high efficiency and low cost. Advanced… (more)

Aßmann, Marc

2010-01-01T23:59:59.000Z

224

Earth-abundant semiconductors for photovoltaic applications ...  

NLE Websites -- All DOE Office Websites (Extended Search)

Earth-abundant semiconductors for photovoltaic applications Thin film photovoltaics (solar cells) has the potential to revolutionize our energy landscape by producing clean,...

225

Low Energy Ion Implantationin Semiconductor Manufacturing | U...  

Office of Science (SC) Website

Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Applications of Nuclear Science...

226

Climate VISION: Private Sector Initiatives: Semiconductors: Work...  

Office of Scientific and Technical Information (OSTI)

Plans The Semiconductor Industry Association has finalized its work plan with the collaboration of EPA. The plan describes actions the industry intends to take to achieve its...

227

CCEC Seminar Wireless Sensors for SemiconductorWireless Sensors for Semiconductor  

E-Print Network (OSTI)

CCEC Seminar Wireless Sensors for SemiconductorWireless Sensors for Semiconductor Manufacturing perhaps. In this talk, we describe our efforts in developing a new class of wireless sensors for use in semiconductor manufacturing. These sensors are fully self-contained with on board power, communications

Akhmedov, Azer

228

Hydrogen in semiconductors and insulators  

E-Print Network (OSTI)

type can be applied to hydrogen storage materials. Keywords:can be applied to hydrogen storage materials. Manuscript O-of the formalism to hydrogen storage materials. A partial

Van de Walle, Chris G.

2007-01-01T23:59:59.000Z

229

Visitors Far and Wide  

NLE Websites -- All DOE Office Websites (Extended Search)

4 4 Visitors Far and Wide From left: Minister Danilov-Daniljan, Evan Mills (Assistant Director, Center for Building Science), Victoria Mats (interpreter and Soviet energy analyst), and Len Grossman (PG&E Energy Center) tour the PG&E Energy Center in San Francisco. The Russian Minister of Ecology and Natural Resources, Victor I. Danilov-Daniljan, spent three days in California as the Center's guest. The Minister presented information on current Soviet energy and environmental dilemmas and participated in a day-long roundtable discussion with representatives of major utilities, manufacturers of energy-efficient technologies, energy regulators, nongovernmental organizations, and Center scientists. Julian Aizenberg, one of the former Soviet Union's (FSU) foremost lighting

230

Island Wide Management Corporation  

Office of Legacy Management (LM)

9 1986 9 1986 Island Wide Management Corporation 3000 Marcus Avenue Lake Success, New York 11042 Dear Sir or Madam: I am sending you this letter and the enclosed information as you have been identified by L. I. Trinin of Glick Construction Company as the representatives of the owners of the property that was formerly the site of the Sylvania-Corning Nuclear Corporation in Bayside, New York. The Department of Energy is evaluating the radiological condition of sites that were utilized under the Manhattan Engineer District and/or the Atomic Energy Commission in the early years of nuclear energy development to determine whether they need remedial action and whether the Department has authority to perform such action. As you may know, the former Sylvania-Corning Corporation Bayside site was identified as one such site.

231

Optic probe for semiconductor characterization  

DOE Patents (OSTI)

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

Sopori, Bhushan L. (Denver, CO); Hambarian, Artak (Yerevan, AM)

2008-09-02T23:59:59.000Z

232

Organic Semiconductors for Low—Cost Solar Cells  

Science Journals Connector (OSTI)

The current cost of solar electricity derived from silicon photovoltaics is about 30 to 40 cents per kilowatt—hour. This cost is similar to peak—power charges in California during the height of summer thus establishing a partial path to economic viability. However this competitiveness is not viable in other seasons and many other locations. This paper will discuss the basic theory and progress of a new class of photovoltaic semiconductors derived from organic polymer materials. These materials have obtained promising results with 5% conversion efficiency. In addition these materials can be manufactured relatively easily by using printing technologies and roll?to?roll coating machines similar to those used to make photographic film or newspapers. Solar cells made this way would not only be cheaper but could also be incorporated into roofing materials to reduce installation costs. Organic semiconductors can be dissolved in common solvents and sprayed or printed onto substrates so they are very promising candidates for the solar production of electricity.

Michael D. McGehee; Chiatzun Goh

2008-01-01T23:59:59.000Z

233

Charge-carrier transport in amorphous organic semiconductors  

E-Print Network (OSTI)

Since the first reports of efficient luminescence and absorption in organic semiconductors, organic light-emitting devices (OLEDs) and photovoltaics (OPVs) have attracted increasing interest. Organic semiconductors have ...

Limketkai, Benjie, 1982-

2008-01-01T23:59:59.000Z

234

Comments on the National Technology Roadmap for Semiconductors  

Science Journals Connector (OSTI)

The SIA National Technology Roadmap for Semiconductors (NTRS) [1] represents ... in defining a unified description of the semiconductor technology requirements for ensuring advancements in the performance ... an ...

James F. Freedman

1996-01-01T23:59:59.000Z

235

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal...  

NLE Websites -- All DOE Office Websites (Extended Search)

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition...

236

Engineering Density of States of Earth Abundant Semiconductors...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Density of States of Earth Abundant Semiconductors for Enhanced Thermoelectric Power Factor Engineering Density of States of Earth Abundant Semiconductors for Enhanced...

237

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Wednesday, 29 November 2006 00:00...

238

e! Science News Semiconductor manufacturing technique holds  

E-Print Network (OSTI)

arsenide chips manufactured in multilayer stacks: light sensors, high-speed transistors and solar cellse! Science News Semiconductor manufacturing technique holds promise for solar energy Published semiconductor manufacturing method pioneered at the University of Illinois, the future of solar energy just got

Rogers, John A.

239

Semiconductor heterojunction band offsets and charge neutrality  

E-Print Network (OSTI)

on semi- conductors A and B like Figure 3. 1, and commutativity of semiconductors A and B, i. e. , DEs(A ? B) = DE?(B ? A). (3. 33) We predict the charge neutrality levels &b, 4is and 4i, might align in semiconductors A, B and C as shown in Figure 3...

Lee, Chomsik

2012-06-07T23:59:59.000Z

240

Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors  

SciTech Connect

The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of charge carriers is known to evolve as the carrier concentration increases, due to the presence of intrinsic disorder in organic semiconductors. Thus, a complementary question is: how does the nature of charge transport change as a function of carrier concentration?

Zhu, Xiaoyang

2014-12-10T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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241

the World Wide Web  

Office of Scientific and Technical Information (OSTI)

technical report has been made technical report has been made electronically available on the World Wide Web through a contribution from Walter L. Warnick In honor of Enrico Fermi Leader of the first nuclear reactor, Nobel Prize winner, and visionary technologist Dr. Warnick is delighted to be the first sponsor for posting a Department of Energy technical report and making it broadly available Office of Scientific and Technical Information Office of Science U.S. Department of Energy September 2008 osti.gov U N I T E D S T A T E S A T O M I C E N E R G Y C O M M I S S I O N AECD-3269 EXPERIMENTAL PRODUCTION OF A DNERGENT CHAIN REACTION BY E. Fermi January 4, 1952 [TIS Issuance ate] [chicago University] - T e c h n i c a l I n f o r m a t i o n S e r v i c e , O a k Ridge, T e n n e s s e e r ABSTRACTS Description of the construction and operation of the chain

242

World Wide Web  

E-Print Network (OSTI)

Although great care has been taken to provide accurate and current information, neither the author(s) nor the publisher, nor anyone else associated with this publica-tion, shall be liable for any loss, damage, or liability directly or indirectly caused or alleged to be caused by this book. The material contained herein is not intended to provide specific advice or recommendations for any specific situation. Trademark notice: Product or corporate names may be trademarks or registered trademarks and are used only for identification and explanation without intent to infringe. Library of Congress Cataloging-in-Publication Data A catalog record for this book is available from the Library of Congress. ISBN: 0-8247-5625-8 This book is printed on acid-free paper.

Theodore E. Warkentin; Andreas Greinacher; Marcel Dekker Inc

243

Acoustic-phonon propagation in rectangular semiconductor nanowires with elastically dissimilar barriers  

E-Print Network (OSTI)

Engineering, University of California--Riverside, Riverside, California 92521, USA Received 15 February 2005 dissimilar materials. As example systems, we have considered GaN nanowires with AlN and plastic barrier­5 The modification of the acoustic phonon dispersion in semiconductor superlattices has been mostly studied, both

244

A Hybrid Life Cycle Inventory of Nano-Scale Semiconductor Manufacturing  

Science Journals Connector (OSTI)

A Hybrid Life Cycle Inventory of Nano-Scale Semiconductor Manufacturing ... There is a need to both quantify unit process emissions and the impacts of auxiliary equipment at the facility scale; (iii) There is a need for streamlined methodologies to assess upstream impacts of manufacturing chemicals, materials and equipment infrastructure. ...

Nikhil Krishnan; Sarah Boyd; Ajay Somani; Sebastien Raoux; Daniel Clark; David Dornfeld

2008-03-19T23:59:59.000Z

245

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films  

E-Print Network (OSTI)

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films A. Bulusu and D. G. Walker1 Interdisciplinary Program in Material Science Vanderbilt University Nashville on device characteristics of 1D and 2D thin film superlattices whose applications include thermoelectric

Walker, D. Greg

246

FY08 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)  

SciTech Connect

This is the annual report for an old project funded by NA22. The purpose of the project was to develop amorphous semiconductors for use as radiation detectors. The annual report contains information about the progress made in synthesizing, characterizing, and radiation response testing of these new materials.

Johnson, Bradley R.; Riley, Brian J.; Crum, Jarrod V.; Ryan, Joseph V.; Sundaram, S. K.; McCloy, John S.; Rockett, Angus

2009-02-01T23:59:59.000Z

247

Energy Management in Semiconductor Cleanrooms  

NLE Websites -- All DOE Office Websites (Extended Search)

6 6 Energy Management in Semiconductor Cleanrooms Cleanrooms are used extensively in the manufacturing of integrated circuits and in the biological and pharmaceutical industries. For particle concentrations to remain low, for example, less than 100 particles/ft3 at >0.5 micrometers (Class 100), the air in the cleanroom must be filtered. Typically, the air is circulated through high-efficiency particulate air (HEPA) filters at a very high rate, such as 400 to 600 room air volumes per hour, to maintain low particle concentrations. The combined effect of high recirculation and a high pressure drop through HEPA filters is higher power costs per unit floor area to operate the cleanroom than to ventilate a commercial building. Cleanrooms are usually ventilated constantly and

248

Boron doping a semiconductor particle  

DOE Patents (OSTI)

A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

Stevens, Gary Don (18912 Ravenglen Ct., Dallas, TX 75287); Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094); Brown, Louanne Kay (2530 Poplar Tr., Garland, TX 75042)

1998-06-09T23:59:59.000Z

249

Heating device for semiconductor wafers  

DOE Patents (OSTI)

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Vosen, Steven R. (Berkeley, CA)

1999-01-01T23:59:59.000Z

250

Heating device for semiconductor wafers  

DOE Patents (OSTI)

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

Vosen, S.R.

1999-07-27T23:59:59.000Z

251

Amorphous Silicon as Semiconductor Material for High Resolution LAPS  

E-Print Network (OSTI)

-08 3.E -08 0 200 400 600 800 displacem ent/µµµµm current/A 1000 2000 3000 4000 1000 2000 3000 4000-substrate Amorphous silicon -4 -2 0 2 4 0,2 0,4 0,6 0,8 1,0 photocurrenta.u. gate voltage/V 600µm x 600µm area scan

Moritz, Werner

252

Scanning probe characterization of novel semiconductor materials and devices  

E-Print Network (OSTI)

surf where q is the fundamental electronic charge magnitude,m * , where q is the fundamental electronic charge and m *

Zhou, Xiaotian

2007-01-01T23:59:59.000Z

253

AgBiS2 Semiconductor-Sensitized Solar Cells  

Science Journals Connector (OSTI)

AgBiS2 Semiconductor-Sensitized Solar Cells ... We present a new ternary semiconductor sensitizer-AgBiS2 for solar cells. ... Liquid-junction semiconductor-sensitized solar cells were fabricated from the synthesized AgBiS2 semiconductor. ...

Pen-Chi Huang; Wei-Chih Yang; Ming-Way Lee

2013-08-16T23:59:59.000Z

254

Transport Equations for Semiconductors Prof. Dr. Ansgar Jungel  

E-Print Network (OSTI)

- cations have been invented; for instance, semiconductor lasers, solar cells, light-emitting diodes (LED

Jüngel, Ansgar

255

Diluted magnetic semiconductor nanowires exhibiting magnetoresistance  

DOE Patents (OSTI)

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

Yang, Peidong (El Cerrito, CA); Choi, Heonjin (Seoul, KR); Lee, Sangkwon (Daejeon, KR); He, Rongrui (Albany, CA); Zhang, Yanfeng (El Cerrito, CA); Kuykendal, Tevye (Berkeley, CA); Pauzauskie, Peter (Berkeley, CA)

2011-08-23T23:59:59.000Z

256

Goal is to further development and manufacturing of wide bandgap semiconductors  

E-Print Network (OSTI)

enriched, pin-type fuel consisting of uranium dioxide pellets in zircaloy cladding. The fuel gives that will make high-power electronic chips and devices that are more energy-efficient possible. In June 1950

Young, R. Michael

257

SPECTROSCOPIE DE DEFAUTS -LUMINESCENCE I. THE ANALYSIS OF WIDE BAND GAP SEMICONDUCTORS  

E-Print Network (OSTI)

'impuretes donneurs, accepteurs et pieges isoelectroniques,et de leur extension a I'identification d'espkces chimiques of impurity, donors, acceptors and isoelectronic traps, and their extension to the identification of chemical junctions with quite heavy doping to provide the desired high bulk conduc- tivity, certainly in the 10'' cm

Boyer, Edmond

258

Title: Device Physics and Applications of Intersubband Transitions in Wide-Bandgap Nitride Semiconductors  

E-Print Network (OSTI)

interconnections are realized using integrated optoelectronic devices operating at wavelengths to which silicon silicon circuits. The thin film optoelectronic devices are bonded directly to the stacked layers. devices. These optoelectronic devices operate at wavelengths to which the silicon is transparent, thus

Van Veen, Barry D.

259

Defects in wide band gap semiconductors: magneto-optical double resonance studies  

Science Journals Connector (OSTI)

Recent results obtained in the investigation of shallow donors in GaN with optical detection of electron paramagnetic resonance via the so-called yellow luminescence are reviewed as well as recent results on the silicon vacancy in SiC using optical detection of electron paramagnetic resonance via the magnetic circular dichroism of the absorption. The power of these double resonance methods is illustrated. The possibility of electrical detection of electron paramagnetic resonance in the electrical conductivity is also briefly discussed as future development.

Johann-Martin Spaeth

2004-01-01T23:59:59.000Z

260

Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser  

E-Print Network (OSTI)

reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser powers [1,2]. However the poor thermal conductivity of III-V materials might prevent an efficient heat by bonding it to a material of high thermal conductivity and good optical quality [2,4,5]. In this work we

Boyer, Edmond

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Mospec Semiconductor Corp | Open Energy Information  

Open Energy Info (EERE)

Mospec Semiconductor Corp Mospec Semiconductor Corp Jump to: navigation, search Name Mospec Semiconductor Corp Place Tainan, Taiwan Sector Solar Product Taiwanese semiconductor products producer; offers monocrystalline silicon wafers and as of April 2008, ingots for the solar industry. Coordinates 22.99721°, 120.180862° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":22.99721,"lon":120.180862,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

262

Hemlock Semiconductor Corp HSC | Open Energy Information  

Open Energy Info (EERE)

Hemlock Semiconductor Corp HSC Hemlock Semiconductor Corp HSC Jump to: navigation, search Name Hemlock Semiconductor Corp (HSC) Place Hemlock, Michigan Zip 48626 Sector Solar Product US-based manufacturer polycrystalline silicon for semiconductor and solar industries. Coordinates 39.589497°, -82.153275° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.589497,"lon":-82.153275,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

263

Climate VISION: Private Sector Initiatives: Semiconductors  

Office of Scientific and Technical Information (OSTI)

Letters of Intent/Agreements Letters of Intent/Agreements The U.S. semiconductor industry, represented by the members of the Environmental Protection Agency's PFC Reduction/Climate Partnership for the Semiconductor Industry, has committed to reduce absolute perfluorocompound (PFC) emissions by 10% below the 1995 baseline level by the year 2010. Perfluorocompounds include the most potent and long-lived greenhouse gases such as perfluorocarbons (e.g., CF4, C2F6, C3F8), trifluoromethane (CHF3), nitrogen trifluoride (NF3), and sulfur hexafluoride (SF6). The Environmental Protection Agency's (EPA) voluntary semiconductor industry partnership was developed collaboratively with the Semiconductor Industry Association (SIA). EPA, SIA, and the Partner companies (listed below) are working to reduce industry greenhouse gas (GHG) emissions. EPA's

264

Narrow band gap amorphous silicon semiconductors  

DOE Patents (OSTI)

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Madan, A.; Mahan, A.H.

1985-01-10T23:59:59.000Z

265

ITRS: The International Technology Roadmap for Semiconductors  

Science Journals Connector (OSTI)

In a move singular for the world’s industry, the semiconductor industry established a quantitative strategy for its progress with the establishment of the ITRS. In its 17th year, it has been extended in 2009 t...

Bernd Hoefflinger

2012-01-01T23:59:59.000Z

266

Thermovoltaic semiconductor device including a plasma filter  

DOE Patents (OSTI)

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Baldasaro, Paul F. (Clifton Park, NY)

1999-01-01T23:59:59.000Z

267

Gaining creative control over semiconductor nanowires  

NLE Websites -- All DOE Office Websites (Extended Search)

Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Using a microfluidic reactor, Los Alamos researchers transformed the SLS process into a flow-based technique. September 26, 2013 Growth of nanowire precursors in a flowing carrier solvent Growth of nanowire precursors in a flowing carrier solvent The new "flow" solution-liquid-solid method allows scientists to slow down growth and thereby capture mechanistic details as the nanowires grow in solution. A Los Alamos research team has transformed the synthesis process of semiconductor nanowires for use in solar cells, batteries, electronics, sensors and photonics using a solution-liquid-solid (SLS) batch approach to achieve unprecedented control over growth rates, nanowire size and internal

268

Dynamics of excitons and charges in organic materials and semiconducto...  

NLE Websites -- All DOE Office Websites (Extended Search)

of excitons and charges in organic materials and semiconductor nanocrystals for optoelectronics December 5, 2014 at 3pmRLE Haus 36-428 Laurens D.A. Siebbeles Department of...

269

Semiconductor Nanowires: Opportunities and Challenges  

E-Print Network (OSTI)

Biosketch: Tim Sands holds a joint appointment in Materials Engineering and Electrical & Computer Engineering at Purdue University. Before joining the faculty ...

270

Predicted band structures of III-V semiconductors in the wurtzite phase  

SciTech Connect

While non-nitride III-V semiconductors typically have a zinc-blende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier ab initio calculations, and where experimental results are available (InP, InAs, and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may facilitate the development of spin-based devices.

De, A.; Pryor, Craig E. [Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242 (United States)

2010-04-15T23:59:59.000Z

271

All-optical logic gates based on vertical cavity semiconductor optical amplifiers  

E-Print Network (OSTI)

in International Technology Roadmap for Semiconductors 2007in International Technology Roadmap for Semiconductors 2007The 2007 International Technology Roadmap for Semiconductors

Gauss, Veronica Andrea

2009-01-01T23:59:59.000Z

272

Methods for manufacturing monocrystalline or near-monocrystalline cast materials  

DOE Patents (OSTI)

Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.

Stoddard, Nathan G

2014-04-29T23:59:59.000Z

273

Porous Diblock Copolymer Thin Films in High-Performance Semiconductor Microelectronics  

SciTech Connect

The engine fueling more than 40 years of performance improvements in semiconductor integrated circuits (ICs) has been industry's ability to pattern circuit elements at ever-higher resolution and with ever-greater precision. Steady advances in photolithography - the process wherein ultraviolet light chemically changes a photosensitive polymer resist material in order to create a latent image - have resulted in scaling of minimum printed feature sizes from tens of microns during the 1980s to sub-50 nanometer transistor gate lengths in today's state-of-the-art ICs. The history of semiconductor technology scaling as well as future technology requirements is documented in the International Technology Roadmap for Semiconductors (ITRS). The progression of the semiconductor industry to the realm of nanometer-scale sizes has brought enormous challenges to device and circuit fabrication, rendering performance improvements by conventional scaling alone increasingly difficult. Most often this discussion is couched in terms of field effect transistor (FET) feature sizes such as the gate length or gate oxide thickness, however these challenges extend to many other aspects of the IC, including interconnect dimensions and pitch, device packing density, power consumption, and heat dissipation. The ITRS Technology Roadmap forecasts a difficult set of scientific and engineering challenges with no presently-known solutions. The primary focus of this chapter is the research performed at IBM on diblock copolymer films composed of polystyrene (PS) and poly(methyl-methacrylate) (PMMA) (PS-b-PMMA) with total molecular weights M{sub n} in the range of {approx}60K (g/mol) and polydispersities (PD) of {approx}1.1. These materials self assemble to form patterns having feature sizes in the range of 15-20nm. PS-b-PMMA was selected as a self-assembling patterning material due to its compatibility with the semiconductor microelectronics manufacturing infrastructure, as well as the significant body of existing research on understanding its material properties.

Black, C.T.

2011-02-01T23:59:59.000Z

274

Sputter deposition of semiconductor superlattices for thermoelectric applications  

SciTech Connect

Theoretical dramatic improvement of the thermoelectric properties of materials by using quantum confinement in novel semiconductor nanostructures has lead to considerable interest in the thermoelectric community. Therefore, we are exploring the critical materials issues for fabrication of quantum confined structures by magnetron sputtering in the lead telluride and bismuth telluride families of materials. We have synthesized modulated structures from thermoelectric materials with bilayer periods of as little as 3.2 nm and shown that they are stable at deposition temperatures high enough to grow quality films. Issues critical to high quality film growth have been investigated such as nucleation and growth conditions and their effect on crystal orientation and growth morphology. These investigations show that nucleating the film at a temperature below the growth temperature of optimum electronic properties produces high quality films. Our work with sputter deposition, which is inherently a high rate deposition process, builds the technological base necessary to develop economical production of these advanced materials. High deposition rate is critical since, even if efficiencies comparable with CFC based refrigeration systems can be achieved, large quantities of quantum confined materials will be necessary for cost-competitive uses.

Wagner, A.V.; Foreman, R.J.; Farmer, J.C.; Barbee, T.W.

1996-11-01T23:59:59.000Z

275

Simulation and Experiment of Wide Bandgap Material Based Nonvolatile Memory  

E-Print Network (OSTI)

phase-change nonvolatile memories”, IEEE Transactions on Device and Materialsphase change phenomena of GST (Germanium-Antimony-Tellurium) materialmaterials and structures are developed to replace the floating gate memory. Phase change

LI, ZONGLIN

2012-01-01T23:59:59.000Z

276

Materials and Transportation Services | The Ames Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials and Transportation Services General Information: Materials and Transportation Services provides Ames Laboratory employees with a wide array of services and support...

277

Scanning Hall probe microscopy of a diluted magnetic semiconductor  

SciTech Connect

We have measured the micromagnetic properties of a diluted magnetic semiconductor as a function of temperature and applied field with a scanning Hall probe microscope built in our laboratory. The design philosophy for this microscope and some details are described. The samples analyzed in this work are Ga{sub 0.94}Mn{sub 0.06}As films grown by molecular beam epitaxy. We find that the magnetic domains are 2-4 mum wide and fairly stable with temperature. Magnetic clusters are observed above T{sub C}, which we ascribe to MnAs defects too small and sparse to be detected by a superconducting quantum interference device magnetometer.

Kweon, Seongsoo [Materials Science and Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Samarth, Nitin [Physics Department, Penn State University, University Park, Pennsylvania 16802 (United States); Lozanne, Alex de [Materials Science and Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States)

2009-05-01T23:59:59.000Z

278

Hydraulic Fracturing in Particulate Materials.  

E-Print Network (OSTI)

??For more than five decades, hydraulic fracturing has been widely used to enhance oil and gas production. Hydraulic fracturing in solid materials (e.g., rock) has… (more)

Chang, Hong

2004-01-01T23:59:59.000Z

279

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications  

SciTech Connect

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

2014-01-01T23:59:59.000Z

280

Light sources based on semiconductor current filaments  

DOE Patents (OSTI)

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Buttram, Malcolm T. (Sandia Park, NM); Mar, Alan (Albuquerque, NM); Helgeson, Wesley D. (Albuquerque, NM); O'Malley, Martin W. (Edgewood, NM); Hjalmarson, Harold P. (Albuquerque, NM); Baca, Albert G. (Albuquerque, NM); Chow, Weng W. (Cedar Crest, NM); Vawter, G. Allen (Albuquerque, NM)

2003-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Duck Young Chung - Argonne National Laboratories, Materials Sicence  

NLE Websites -- All DOE Office Websites (Extended Search)

EM > Duck Young Chung EM > Duck Young Chung Duck Young Chung Principal Materials Engineer Bldg. 223, C-233 Phone: 630-252-4907 This e-mail address is being protected from spambots. You need JavaScript enabled to view it. Biography Duck Young Chung is a staff scientist in the Emerging Materials Group. After receiving his B.A. from DanKook University in 1984, M.S. and Ph.D from Kyungpook National University in 1991, he joined the group of Prof. Kanatzidis as a postdoc at Michigan State University in 1992 where later he became a research faculty, then moved to Argonne in 2006. His expertise includes exploratory synthesis, crystal growth, and characterization of a wide variety of bulk materials as well as development of synthesis techniques and methods in the areas of chalcogenides, pnictides, and intermetallic alloys for thermoelectrics, superconductivity, topological insulators, and semiconducting materials with interesting electronic or magnetic properties. He is the author of 80 peer-reviewed articles and patents published. Notable achievements include discovery of high performance thermoelectric semiconductor, CsBi4Te6, which holds the record of figure of merit for low temperature cooling applications (Science, 2000) and synthesis of an unconventional superconductors Ba1-xKxFe2As2 characterized by inelastic neutron scattering (Nature, 2008).

282

Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics  

SciTech Connect

The principal goal in the field of high-Tc ferromagnetic semiconductors is the synthesis, characterization and utilization of semiconductors which exhibit substantial carrier spin polarization at and above room temperature. Such materials are of critical importance in the emerging field of semiconductor spintronics. The interaction leading to carrier spin polarization, exchange coupling between the dopant spins and the valence or conduction band, is known to be sufficiently weak in conventional semiconductors, such as GaAs and Si, that magnetic ordering above cryogenic temperatures is essentially impossible. Since the provocative theoretical predictions of Tc above ambient in p-Mn:ZnO and p-Mn:GaN (T. Dietl et al., Science 287 1019 (2000)), and the observation of room-temperature ferromagnetism in Co:TiO2 anatase (Y. Matsumoto et al., Science 291 854 (2001)), there has been a flurry of work in oxides and nitrides doped with transition metals with unpaired d electrons. It has even been claimed that room-temperature ferromagnetism can be obtained in certain d0 transition metals oxides without a dopant. In this Report, the field of transition metal doped oxides and nitrides is critically reviewed and assessed from a materials science perspective. Since much of the field centers around thin film growth, this Report focuses on films prepared not only by conventional vacuum deposition methods, but also by spin coating colloidal nanoparticles.

Chambers, Scott A.

2006-10-01T23:59:59.000Z

283

FY06 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)  

SciTech Connect

We describe progress in the development of new materials for portable, room-temperature, gamma-radiation detection at Pacific Northwest National Laboratory at the Hanford Site in Washington State. High Z, high resistivity, amorphous semiconductors are being designed for use as solid-state detectors at near ambient temperatures; principles of operation are analogous to single-crystal semiconducting detectors. Amorphous semiconductors have both advantages and disadvantages compared to single crystals, and this project is developing methods to mitigate technical problems and design optimized material for gamma detection. Several issues involved in the fabrication of amorphous semiconductors are described, including reaction thermodynamics and kinetics, the development of pyrolytic coating, and the synthesis of ingots. The characterization of amorphous semiconductors is described, including sectioning and polishing protocols, optical microscopy, X-ray diffraction, scanning electron microscopy, optical spectroscopy, particle-induced X-ram emission, Rutherford backscattering, and electrical testing. Then collaboration with the University of Illinois at Urbana-Champaign is discussed in the areas of Hall-effect measurements and current voltage data. Finally, we discuss the strategy for continuing the program.

Johnson, Bradley R.; Riley, Brian J.; Crum, Jarrod V.; Sundaram, S. K.; Henager, Charles H.; Zhang, Yanwen; Shutthanandan, V.

2007-01-01T23:59:59.000Z

284

Zecon Solar Semiconductor Inc | Open Energy Information  

Open Energy Info (EERE)

Zecon Solar Semiconductor Inc Zecon Solar Semiconductor Inc Jump to: navigation, search Name Zecon Solar & Semiconductor Inc Place Cupertino, California Zip 95014 Sector Solar Product Focused on large-scale solar building integrated PV systems. Coordinates 37.31884°, -122.029244° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.31884,"lon":-122.029244,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

285

Two-Photon Emission from Semiconductors  

E-Print Network (OSTI)

We report the first experimental observations of two-photon emission from semiconductors, to the best of our knowledge, and develop a corresponding theory for the room-temperature process. Spontaneous two-photon emission is demonstrated in optically-pumped bulk GaAs and in electrically-driven GaInP/AlGaInP quantum wells. Singly-stimulated two-photon emission measurements demonstrate the theoretically predicted two-photon optical gain in semiconductors - a necessary ingredient for any realizations of future two-photon semiconductor lasers. Photon-coincidence experiment validates the simultaneity of the electrically-driven GaInP/AlGaInP two-photon emission, limited only by detector's temporal resolution.

Alex Hayat; Pavel Ginzburg; Meir Orenstein

2007-10-25T23:59:59.000Z

286

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents (OSTI)

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1989-05-09T23:59:59.000Z

287

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents (OSTI)

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1987-10-23T23:59:59.000Z

288

Techniques for increasing output power from mode-locked semiconductor lasers  

SciTech Connect

Mode-locked semiconductor lasers have drawn considerable attention as compact, reliable, and relatively inexpensive sources of short optical pulses. Advances in the design of such lasers have resulted in vast improvements in pulsewidth and noise performance, at a very wide range of repetition rates. An attractive application for these lasers would be to serve as alternatives for large benchtop laser systems such as dye lasers and solid-state lasers. However, mode-locked semiconductor lasers have not yet approached the performance of such systems in terms of output power. Different techniques for overcoming the problem of low output power from mode-locked semiconductor lasers will be discussed. Flared and arrayed lasers have been used successfully to increase the pulse saturation energy limit by increasing the gain cross section. Further improvements have been achieved by use of the MOPA configuration, which utilizes a flared semiconductor amplifier s amplify pulses to energies of 120 pJ and peak powers of nearly 30W.

Mar, A.; Vawter, G.A.

1996-02-01T23:59:59.000Z

289

ROSAT wide field camera mirrors  

Science Journals Connector (OSTI)

The ROSAT wide field camera (WFC) is an XUV telescope operating in the 12–250-eV energy band. The mirror system utilizes Wolter-Schwarzschild type I (WS I) grazing incidence optics...

Willingale, R

1988-01-01T23:59:59.000Z

290

A New Cleanroom for a Next-Generation Semiconductor Research...  

NLE Websites -- All DOE Office Websites (Extended Search)

A New Cleanroom for a Next-Generation Semiconductor Research Tool A New Cleanroom for a Next-Generation Semiconductor Research Tool Print The new Sector 12 cleanroom under...

291

Lattice mismatched compound semiconductors and devices on silicon  

E-Print Network (OSTI)

III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and ...

Yang, Li, Ph. D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

292

Silicon Carbide Power Semiconductor Devices in the Cleanroom...  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Carbide Power Semiconductor Devices in the Cleanroom Silicon Carbide Power Semiconductor Devices in the Cleanroom Ron Olson 2012.10.04 I would like to introduce Zach Stum,...

293

DECENTRALIZING SEMICONDUCTOR CAPACITY PLANNING VIA INTERNAL MARKET COORDINATION  

E-Print Network (OSTI)

1 DECENTRALIZING SEMICONDUCTOR CAPACITY PLANNING VIA INTERNAL MARKET COORDINATION SULEYMAN KARABUK semiconductor manufacturer: marketing managers reserve capacity from manufacturing based on product demands, while attempting to maximize profit; manufacturing managers allocate capacity to competing marketing

Wu, David

294

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic  

E-Print Network (OSTI)

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic properties of optoelectronic properties of and uses for semi-insulating semiconductor heterostructures and thin films. The principal optical and optoelectronic properties of semi-insulating epilayers and heterostructures

Nolte, David D.

295

Taiwan Semiconductor Manufacturing Co Ltd TSMC | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Manufacturing Co Ltd TSMC Semiconductor Manufacturing Co Ltd TSMC Jump to: navigation, search Name Taiwan Semiconductor Manufacturing Co Ltd (TSMC) Place Hsinchu, Taiwan Zip 300 Sector Solar Product Taiwan-based semiconductor company. The firm is also venturing into solar and LED production. References Taiwan Semiconductor Manufacturing Co Ltd (TSMC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Taiwan Semiconductor Manufacturing Co Ltd (TSMC) is a company located in Hsinchu, Taiwan . References ↑ "Taiwan Semiconductor Manufacturing Co Ltd (TSMC)" Retrieved from "http://en.openei.org/w/index.php?title=Taiwan_Semiconductor_Manufacturing_Co_Ltd_TSMC&oldid=352012"

296

Method Of Transferring A Thin Crystalline Semiconductor Layer  

NLE Websites -- All DOE Office Websites (Extended Search)

Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure

297

Radioactive Waste Management Complex Wide Review | Department...  

Office of Environmental Management (EM)

Radioactive Waste Management Complex Wide Review Radioactive Waste Management Complex Wide Review The main goal of this complex-wide review was to obtain feedback from DOE sites...

298

Semiconductor nanowires DOI: 10.1002/smll.200500094  

E-Print Network (OSTI)

of a semiconductor Si nanowire, synthesized via the VLS pro- cess, into metallic nickel silicide through parameters. Anisotropic growth of a metal onto a semiconductor nanowire (or a semicon- ductor on a metal approach to prepare metal/semiconductor nano- wire heterostructures by transforming specific sections

Rogers, John A.

299

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents (OSTI)

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

300

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors  

DOE Patents (OSTI)

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Madan, A.

1984-12-10T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

High gain photoconductive semiconductor switch having tailored doping profile zones  

DOE Patents (OSTI)

A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

Baca, Albert G. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Mar, Alan (Albuquerque, NM); Zutavern, Fred J (Albuquerque, NM); Hjalmarson, Harold P. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Zipperian, Thomas E. (Edgewood, NM); O'Malley, Martin W. (Edgewood, NM); Helgeson, Wesley D. (Albuquerque, NM); Denison, Gary J. (Sandia Park, NM); Brown, Darwin J. (Albuquerque, NM); Sullivan, Charles T. (Albuquerque, NM); Hou, Hong Q. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

302

High-Frequency Conductivity of Degenerate Semiconductors  

Science Journals Connector (OSTI)

The problem of high-frequency conductivity of a degenerate semiconductor is investigated by a kinetic description. The finite duration of encounters is taken into account in a self-consistent fashion which properly includes collective effects. This treatment is an extension for quantum plasmas of the Dawson-Oberman method given for classical plasmas.

Amiram Ron and Narkis Tzoar

1963-09-01T23:59:59.000Z

303

Semiconductor Nanowire Optical Antenna Solar Absorbers  

E-Print Network (OSTI)

technology. KEYWORDS Solar cell, semiconductor nanowires, optical antennas, photon management, light trapping a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach to exhibit a strongly angle-dependent optical response and the resulting solar cells require bulky solar

Fan, Shanhui

304

Semiconductor detectors with proximity signal readout  

SciTech Connect

Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

Asztalos, Stephen J. [XIA, LLC, Hayward, CA (United States)

2014-01-30T23:59:59.000Z

305

Organic conductive films for semiconductor electrodes  

DOE Patents (OSTI)

According to the present invention, improved electrodes overcoated with conductive polymer films and preselected catalysts are provided. The electrodes typically comprise an inorganic semiconductor over-coated with a charge conductive polymer film comprising a charge conductive polymer in or on which is a catalyst or charge-relaying agent.

Frank, A.J.

1984-01-01T23:59:59.000Z

306

Defect Tolerant Semiconductors for Solar Energy Conversion  

Science Journals Connector (OSTI)

Defect Tolerant Semiconductors for Solar Energy Conversion ... He obtained his Ph.D. in Physics at Paris-Sud University where he modeled Hot Carrier Solar Cells by means of Ensemble Monte Carlo methods. ... These surface energies are significantly lower compared to 96 and 102 meV/Å2 for (1010) and (1120) low energy nonpolar GaN surfaces respectively. ...

Andriy Zakutayev; Christopher M. Caskey; Angela N. Fioretti; David S. Ginley; Julien Vidal; Vladan Stevanovic; Eric Tea; Stephan Lany

2014-03-13T23:59:59.000Z

307

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS  

E-Print Network (OSTI)

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS M.D. MCCLUSKEY* University) spectroscopy of hydrogen and deuterium in GaP, AlSb, ZnSe, and GaN has provided important information about the structures of dopant- hydrogen complexes and their interaction with the host lattice. In GaN:Mg, for example

McCluskey, Matthew

308

High resolution scintillation detector with semiconductor readout  

DOE Patents (OSTI)

A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

Levin, Craig S. (Santa Monica, CA); Hoffman, Edward J. (Los Angeles, CA)

2000-01-01T23:59:59.000Z

309

World Wide Web Information Servers  

NLE Websites -- All DOE Office Websites (Extended Search)

World Wide Web Information Servers World Wide Web Information Servers Lawrence Berkeley Laboratory recently announced a gopher and World Wide Web site. To get to the web site, telnet to www.lbl.gov, login: www. Access is provided to LBL's gopher, library catalog, and publication list. The Center is funding the implementation of a WWW network node for on-line access to publications, databases, and documents full of hypermedia links to other documents or information systems from the Energy & Environment Division. Full implementation is expected by May 1994, and will include access to a variety of information from all the research programs and centers. The technology transfer project calls for this newsletter to be published on WWW using the Mosaic interface under development at the National Center

310

Direct computation of the packing entropy of granular materials  

E-Print Network (OSTI)

of granular materials Daniel A. Asenjo-Andrews Summary Granular materials are the second most manipulated material in industry after water and their properties are of great importance for the pharmaceutical, food, mechanosynthesis and semiconductor industries... substance is dispersed in another and may be solid, liquid or gaseous. Granular materials are of particular interest as they are the second most manipulated material in industry after water and can be found in the form of powders in pharmaceutical, food...

Asenjo-Andrews, Daniel

2014-06-10T23:59:59.000Z

311

Wide field of view telescope  

DOE Patents (OSTI)

A wide field of view telescope having two concave and two convex reflective surfaces, each with an aspheric surface contour, has a flat focal plane array. Each of the primary, secondary, tertiary, and quaternary reflective surfaces are rotationally symmetric about the optical axis. The combination of the reflective surfaces results in a wide field of view in the range of approximately 3.8.degree. to approximately 6.5.degree.. The length of the telescope along the optical axis is approximately equal to or less than the diameter of the largest of the reflective surfaces.

Ackermann, Mark R. (Albuquerque, NM); McGraw, John T. (Placitas, NM); Zimmer, Peter C. (Albuquerque, NM)

2008-01-15T23:59:59.000Z

312

Enhanced von Weizsäcker Wang-Govind-Carter kinetic energy density functional for semiconductors  

SciTech Connect

We propose a new form of orbital-free (OF) kinetic energy density functional (KEDF) for semiconductors that is based on the Wang-Govind-Carter (WGC99) nonlocal KEDF. We enhance within the latter the semi-local von Weizsäcker KEDF term, which is exact for a single orbital. The enhancement factor we introduce is related to the extent to which the electron density is localized. The accuracy of the new KEDF is benchmarked against Kohn-Sham density functional theory (KSDFT) by comparing predicted energy differences between phases, equilibrium volumes, and bulk moduli for various semiconductors, along with metal-insulator phase transition pressures. We also compare point defect and (100) surface energies in silicon for a broad test of its applicability. This new KEDF accurately reproduces the exact non-interacting kinetic energy of KSDFT with only one additional adjustable parameter beyond the three parameters in the WGC99 KEDF; it exhibits good transferability between semiconducting to metallic silicon phases and between various III-V semiconductors without parameter adjustment. Overall, this KEDF is more accurate than previously proposed OF KEDFs (e.g., the Huang-Carter (HC) KEDF) for semiconductors, while the computational efficiency remains at the level of the WGC99 KEDF (several hundred times faster than the HC KEDF). This accurate, fast, and transferable new KEDF holds considerable promise for large-scale OFDFT simulations of metallic through semiconducting materials.

Shin, Ilgyou [Department of Chemistry, Princeton University, Princeton, New Jersey 08544-1009 (United States)] [Department of Chemistry, Princeton University, Princeton, New Jersey 08544-1009 (United States); Carter, Emily A., E-mail: eac@princeton.edu [Department of Mechanical and Aerospace Engineering, Program in Applied and Computational Mathematics, and Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544-5263 (United States)

2014-05-14T23:59:59.000Z

313

SETEC/Semiconductor Manufacturing Technologies Program: 1999 Annual and Final Report  

SciTech Connect

This report summarizes the results of work conducted by the Semiconductor Manufacturing Technologies Program at Sandia National Laboratories (Sandia) during 1999. This work was performed by one working group: the Semiconductor Equipment Technology Center (SETEC). The group's projects included Numerical/Experimental Characterization of the Growth of Single-Crystal Calcium Fluoride (CaF{sub 2}); The Use of High-Resolution Transmission Electron Microscopy (HRTEM) Imaging for Certifying Critical-Dimension Reference Materials Fabricated with Silicon Micromachining; Assembly Test Chip for Flip Chip on Board; Plasma Mechanism Validation: Modeling and Experimentation; and Model-Based Reduction of Contamination in Gate-Quality Nitride Reactor. During 1999, all projects focused on meeting customer needs in a timely manner and ensuring that projects were aligned with the goals of the National Technology Roadmap for Semiconductors sponsored by the Semiconductor Industry Association and with Sandia's defense mission. This report also provides a short history of the Sandia/SEMATECH relationship and a brief on all projects completed during the seven years of the program.

MCBRAYER,JOHN D.

2000-12-01T23:59:59.000Z

314

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism  

SciTech Connect

The electronic and magnetic properties of graphene nanoflakes (GNFs) can be tuned by patterned adsorption of hydrogen. Controlling the H coverage from bare GNFs to half hydrogenated and then to fully hydrogenated GNFs, the transformation of small-gap semiconductor {yields} half-metal {yields} wide-gap semiconductor occurs, accompanied by a magnetic {yields} magnetic {yields} nonmagnetic transfer and a nonmagnetic {yields} magnetic {yields} nonmagnetic transfer for triangular and hexagonal nanoflakes, respectively. The half hydrogenated GNFs, associated with strong spin polarization around the Fermi level, exhibit the unexpected large spin moment that is scaled squarely with the size of flakes. The induced spin magnetizations of these nanoflakes align parallel and lead to a substantial collective character, enabling the half hydrogenated GNFs to be spin-filtering flakes. These hydrogenation-dependent behaviors are then used to realize an attractive approach to engineer the transport properties, which provides a new route to facilitate the design of tunable spin devices.

Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Sun, Xin; Zu, Xiaotao; Gao, Fei

2012-03-08T23:59:59.000Z

315

Nanomaterials for Energy and Electronics Materials Science  

E-Print Network (OSTI)

crystalline silicon solar cells suffer from both high materials costs and energy-intensive production-sensitized solar cells (DSCs) based on oxide semiconductors and organic dyes have recently emerged as a promising Synthesis of ZnO Aggregates and Their Application in Dye-sensitized Solar Cells Nanomaterials for Energy

Cao, Guozhong

316

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

Development of Cantilever Epitaxy to Produce High Quality GaN with Reduced Development of Cantilever Epitaxy to Produce High Quality GaN with Reduced Threading Dislocation Densities by C. C. Mitchell, A. A. Allerman, C. I. H. Ashby, R. D. Briggs, D. M. Follstadt, S. L. Lee, D. D. Koleske Motivation-GaN grown on any currently available substrates has an inherent problem of having to overcome a large lattice mismatch with the substrate. As a result typical planar GaN includes anywhere from 10 8 - 10 10 threading dislocations per square centimeter. Cantilever epitaxy (CE) is a technique developed to produce areas of GaN with a reduced number of vertical threading dislocations (VTDs) over large areas. Low defect materials are required to reduce leakage and breakdown of both electronic and opto- electronic devices. Accomplishment-This

317

Organic semiconductors for the new millennium  

Science Journals Connector (OSTI)

...millennium 181 active material indiumtin oxide...electrode, or cathode, since the...func- tion materials are better...electron-injectors (cathodes), whereas high work function materials, such as ITO...non-phosphorescent active materials the...

2000-01-01T23:59:59.000Z

318

Method of transferring strained semiconductor structure  

DOE Patents (OSTI)

The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

Nastasi, Michael A. (Santa Fe, NM); Shao, Lin (College Station, TX)

2009-12-29T23:59:59.000Z

319

"Magnetically dead" surface layers on ferromagnetic semiconductors  

Science Journals Connector (OSTI)

We perform an exact model calculation for the conduction-band spin structure of ferromagnetic semiconductors. The purpose of this illustrative quasiatomic theory (which is an abstraction of our earlier general theory) is to demonstrate that the case T=0 (i.e., ferromagnetic saturation) exhibits vanishingly small spectral weights of certain quasiparticle or scattering states which, however, become manifest for T>0, and determine the electron-spin polarization. Hence T=0 results cannot be generalized to nonzero temperatures and should not be used to prove or disprove the existence of "magnetically dead" surface layers on ferromagnetic semiconductors. The existence of such dead layers has frequently been postulated to explain the electron-spin polarization in photoemission and field-emission experiments.

W. Nolting and B. Reihl

1983-10-01T23:59:59.000Z

320

Optical cavity furnace for semiconductor wafer processing  

DOE Patents (OSTI)

An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

Sopori, Bhushan L.

2014-08-05T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Semiconductor Manufacturing International Corp SMIC | Open Energy  

Open Energy Info (EERE)

Manufacturing International Corp SMIC Manufacturing International Corp SMIC Jump to: navigation, search Name Semiconductor Manufacturing International Corp (SMIC) Place Shanghai, Shanghai Municipality, China Zip 201203 Sector Solar Product Semiconductor group launching solar cell production from its recycled silicon wafers. Coordinates 31.247709°, 121.472618° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.247709,"lon":121.472618,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

322

A Markovian analysis of semiconductor manufacturing processes  

E-Print Network (OSTI)

) Karan L. Watson (Member) Martin A. Wortman (Member) ep Sastri (Member) o W. Howze (Head of Department) December 1991 ABSTRACT A Markovian Analysis of Semiconductor Manufacturing Processes. (December 1991) Kent Eugene Schultz, B. S. , Iowa... grateful to Dr. Martin Wortman, for his pa- tience and endless stream of examples to help me understand stochastic processes. I would also like to thank Dr. Tep Sastri for his patience and for always having a refer- ence available when I needed it...

Schultz, Kent Eugene

2012-06-07T23:59:59.000Z

323

Electrical Usage Characterization of Semiconductor Processing Tools  

E-Print Network (OSTI)

ELECTRICAL USAGE CHARACTERIZATION OF SEMICONDUCTOR PROCESSING TOOLS Scott R. Hinson Associate Engineer Radian Electronic Systems 15705 Long Vista Drive Austin, TX 78751 Abstract This paper presents the basic concepts in performing... be completed using as much detail as possible. The most often cited reason for aUditing process tools is the large discrepancy between the facilities requirements listed on the tool nameplate and the actual measured usage. I have measured systems...

Hinson, S. R.

324

Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors  

Science Journals Connector (OSTI)

Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism.

K.-J. Chao, Zhenyu Zhang, Ph. Ebert, and C. K. Shih

1999-08-15T23:59:59.000Z

325

Semiconductor electrochemistry of coal pyrite  

SciTech Connect

The kinetics of the formation of Fe(HS)[sup 2]-n[sub n,] the intermediate in the formation of FeS (from the reaction between aqueous sulfide ions and dissolved FE(II) salts) was studied with a stopped-flow spectrophotometric technique. As described in the previous report, the absorbance-time curve indicated that a black substance formed within the first few seconds of the reaction; this material subsequently decomposed gradually to give a lighter dark product within the following several minutes. It was proposed that an intermediate species, Fe(HS)[sup 2]-n[sub n], was formed initially from the reaction between Fe[sup 2+] and HS ions in aqueous solution and this intermediate was converted to FeS finally. The kinetic experiments showed that the rate of formation of Fe(HS)[sup 2]-n[sub n] was first order with respect to both Fe[sup 2+] and HS, with a rate constant of 103.81 (mol/l)[sup [minus]1]sec[sup [minus]1]. These results suggest that the black intermediate is FeHS[sup +].

Osseo-Asare, K.; Wei, D.

1992-01-01T23:59:59.000Z

326

Imaging of self-assembly and self-assembled materials P. V. Braun  

E-Print Network (OSTI)

Imaging of self-assembly and self-assembled materials P. V. Braun Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 Self-assembled materials have applications. Self-assembly has been proposed as a route to photonic band gap materials, semiconductor devices

Braun, Paul

327

LBL-37525 UC-404 Surface Recombination in Semiconductors J.M. Langer* and W. Walukiewicz**  

Office of Scientific and Technical Information (OSTI)

37525 37525 UC-404 Surface Recombination in Semiconductors J.M. Langer* and W. Walukiewicz** "Institute of Physics Polish Academy of Sciences Al. Lotnikow 32/46 02668 Warsaw, Poland **Center for Advanced Materials Materials Sciences Division Lawrence Berkeley National Laboratory University of California Berkeley, California 94720 July 1995 DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, make any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that

328

Optical properties of metallic (III, Mn)V ferromagnetic semiconductors in the infrared to visible range  

E-Print Network (OSTI)

, Texas 77843-4242, USA 2Institute of Physics, ASCR, Cukrovarnick? 10, 162 53 Praha 6, Czech Republic 3Department of Physics, University of Texas, Austin, Texas 78712-0264, USA 4Institute of Physics, Polish Academy of Sciences, al. Lotnik?w 32/46, PL-02... of ferromagnetic semiconductors based on (III, Mn)V materials.1?4 These materials have been the focus of intensive research over the recent years after nonequilibrium growth procedures5,6 have demonstrated the ability to achieve a ferromagnetic phase...

Hankiewicz, EM; Jungwirth, T.; Dietl, T.; Timm, C.; Sinova, Jairo.

2004-01-01T23:59:59.000Z

329

Solid-State Formation of Titanium Carbide and Molybdenum Carbide as Contcts for Carbon-Containing Semiconductors  

SciTech Connect

Metal carbides are good candidates to contact carbon-based semiconductors (SiC, diamond, and carbon nanotubes). Here, we report on an in situ study of carbide formation during the solid-state reaction between thin Ti or Mo films and C substrates. Titanium carbide (TiC) was previously reported as a contact material to diamond and carbon nanotubes. However, the present study shows two disadvantages for the solid-state reaction of Ti and C. First, because Ti reacts readily with oxygen, a capping layer should be included to enable carbide formation. Second, the TiC phase can exist over a wide range of composition (about 10%, i.e., from Ti{sub 0.5}C{sub 0.5} to Ti{sub 0.6}C{sub 0.4}), leading to significant variations in the properties of the material formed. The study of the Mo-C system suggests that molybdenum carbide (Mo{sub 2}C) is a promising alternative, since the phase shows a lower resistivity (about 45% lower than for TiC), the carbide forms below 900 {sup o}C, and its formation is less sensitive to oxidation as compared with the Ti-C system. The measured resistivity for Mo{sub 2}C is p=59 {mu}{Omega} cm, and from kinetic studies an activation energy for Mo{sub 2}C formation of E{sub a}=3.15+/-0.15 eV was obtained.

Leroy,W.; Detavernier, C.; van Meirhaeghe, R.; Kellock, A.; Lavoie, C.

2006-01-01T23:59:59.000Z

330

Novel Fabrication and Simple Hybridization of Exotic Material MEMS  

SciTech Connect

Work in materials other than silicon for MEMS applications has typically been restricted to metals and metal oxides instead of more ''exotic'' semiconductors. However, group III-V and II-VI semiconductors form a very important and versatile collection of material and electronic parameters available to the MEMS and MOEMS designer. With these materials, not only are the traditional mechanical material variables (thermal conductivity, thermal expansion, Young's modulus, etc.) available, but also chemical constituents can be varied in ternary and quaternary materials. This flexibility can be extremely important for both friction and chemical compatibility issues for MEMS. In addition, the ability to continually vary the bandgap energy can be particularly useful for many electronics and infrared detection applications. However, there are two major obstacles associated with alternate semiconductor material MEMS. The first issue is the actual fabrication of non-silicon devices and the second impediment is communicating with these novel devices. We will describe an essentially material independent fabrication method that is amenable to most group III-V and II-VI semiconductors. This technique uses a combination of non-traditional direct write precision fabrication processes such as diamond turning, ion milling, laser ablation, etc. This type of deterministic fabrication approach lends itself to an almost trivial assembly process. We will also describe in detail the mechanical, electrical, and optical self-aligning hybridization technique used for these alternate-material MEMS.

Datskos, P.G.; Rajic, S.

1999-11-13T23:59:59.000Z

331

Materialism and materiality  

Science Journals Connector (OSTI)

Accountants and auditors in recent financial scandals have been pictured as materialistic, simply calculating consequences and ignoring duties. This paper potentially explains this apparently materialistic behaviour in what has historically been a truthtelling profession. Materiality, which drives audit priorities, has been institutionalised in accounting and auditing standards. But a materiality focus inherently implies that all amounts that are not 'materially' misstated are equally true. This leads to habitual immaterial misstatements and promotes the view that auditors do not care about truth at all. Auditors' lack of commitment to truth undermines their claim to be professionals in the classic sense.

Michael K. Shaub

2005-01-01T23:59:59.000Z

332

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Semiconductor Industry Association (SIA) The Semiconductor Industry Association (SIA) is the premier trade association representing the U.S. semiconductor industry. Founded in 1977 by five microelectronics innovators, the SIA has grown to include over 100 companies that account for more than 83% of U.S.-based semiconductor production. The SIA provides a forum for domestic semiconductor companies to work collectively to advance the competitiveness of the $70 billion U.S. chip industry. Through its national and international network of chief executive officers and working committees, the SIA shapes public policy on issues important to the industry and provides a spectrum of services to help its members grow their businesses. World Semiconductor Council (WSC)

333

Physical properties and design of light-emitting devices based on organic materials and nanoparticles  

E-Print Network (OSTI)

This thesis presents the detailed experimental and theoretical characterization of light-emitting devices (LEDs) based on organic semiconductors and colloidal quantum dots (QDs). This hybrid material system has several ...

Anikeeva, Polina Olegovna

2009-01-01T23:59:59.000Z

334

Photoluminescence and Extended X-ray Absorption Fine Structure Studies on CdTe Material.  

E-Print Network (OSTI)

??The direct-band-gap semiconductor CdTe is an important material for fabricating high efficiency, polycrystalline thin-film solar cells in a heterojunction configuration. The outstanding physical properties of… (more)

Liu, Xiangxin

2006-01-01T23:59:59.000Z

335

Automated material handling systems: an approach to robust layout planning of AMHS  

Science Journals Connector (OSTI)

The simulation-based layout planning of automated material handling systems (AMHS) for microelectronics and semiconductor manufacturing demands adequate simulation models. An approach for measuring and quantifying the AMHS layout performance of alternative ...

Roland Sturm; Joachim Seidelmann; Johann Dorner; Kevin Reddig

2003-12-01T23:59:59.000Z

336

Electroluminescence from colloidal semiconductor CdSe nanoplatelets in hybrid organic–inorganic light emitting diode  

Science Journals Connector (OSTI)

Abstract We report on the fabrication of a hybrid light-emitting-diode based on colloidal semiconductor CdSe nanoplatelets as emitters and organic TAZ [3-(Biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole] and TPD [N, N?-bis (3-methylphenyl)-N, N?-bis (phenyl)-benzidine] materials as the electron and hole transporting layers. Electroluminescent and current–voltage characteristics of the developed hybrid device with the turn-on voltage of 5.5 V and the radiation wavelength of 515 nm have been obtained. Semiconductor nanoplatelets like CdSe are attractive for the fabrication of hybrid \\{LEDs\\} with low operating voltages, spectrally pure color and short-wavelength electroluminescence, which is required for RGB devices.

A.G. Vitukhnovsky; V.S. Lebedev; A.S. Selyukov; A.A. Vashchenko; R.B. Vasiliev; M.S. Sokolikova

2015-01-01T23:59:59.000Z

337

Method and system for powering and cooling semiconductor lasers  

DOE Patents (OSTI)

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Telford, Steven J; Ladran, Anthony S

2014-02-25T23:59:59.000Z

338

Hanford Site Wide Programs - Hanford Site  

NLE Websites -- All DOE Office Websites (Extended Search)

Decrease Font Size Hanford Site Wide Programs Hanford Safety Hanford Site Wide Programs Hanford Fire Department Health & Safety Exposition Hanford Traffic Safety Hanford...

339

X-ray microscopy: An emerging technique for semiconductor microstructure characterization  

SciTech Connect

The advent of third generation synchrotron radiation x-ray sources, such as the Advanced Light Source (ALS) at Berkeley have enabled the practical realization of a wide range of new techniques in which mature chemical or structural probes such as x-ray photoelectron spectroscopy (XPS) and x-ray diffraction are used in conjunction with microfocused x-ray beams. In this paper the characteristics of some of these new microscopes are described, particularly in reference to their applicability to the characterization of semiconductor microstructures.

Padmore, H.A.

1998-05-01T23:59:59.000Z

340

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Technical Information Technical Information Download Acrobat Reader Modeling China's Semiconductor Industry Fluorinated Compound Emissions and Drafting a Roadmap for Climate Protection. (PDF 101 KB) 14th Annual International Semiconductor Environment Safety & Health (ISESH) Conference in Jeju, Korea (June 2007) presentation by Scott Bartos, U.S. EPA. Estimating the Impact of Migration to Asian Foundry Production on Attaining the WSC 2010 PFC Reduction Goal. (PDF 458 KB) 11th Annual ISESH Conference in Makuhari, Japan (July 2004) presentation by Scott Bartos, U.S. EPA. Guidelines for Environmental Characterization of Semiconductor Equipment (PDF 361 KB) This document provides guidelines for suppliers of semiconductor processing and abatement equipment to characterize their equipment to meet

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

July 28, 2010, Guiding semiconductor research through collaborative engagement  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

The SRC ... The SRC ... Guiding semiconductor research through collaborative engagement Elizabeth J. Weitzman Exec. VP, SRC Exec. Director, Focus Center Research Program Semiconductor Research Corporation 2 ... Awarded Nat'l Medal of Technology Presidential Citation: "For building the world's largest and most successful university research force to support the ... semiconductor industry; For proving the concept of collaborative research as the first high-tech research consortium; and For creating the concept and methodology that evolved into the International Technology Roadmap for Semiconductors." 3 Key Attributes of SRC Research Entities 1. Accepted IP model. SRC's model has been

342

Semiconductor nanowires for photovoltaic and photoelectrochemical energy conversion  

Science Journals Connector (OSTI)

Semiconductor nanowires (NW) possess several beneficial properties for efficient conversion of solar energy into electricity and chemical energy. Due to their efficient absorption of light, short distances for...

Neil P. Dasgupta; Peidong Yang

2014-06-01T23:59:59.000Z

343

Method of transferring a thin crystalline semiconductor layer  

DOE Patents (OSTI)

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Nastasi, Michael A. (Sante Fe, NM); Shao, Lin (Los Alamos, NM); Theodore, N. David (Mesa, AZ)

2006-12-26T23:59:59.000Z

344

Multiplex Chaos Synchronization in Semiconductor Lasers with Multiple Optoelectronic Feedbacks  

E-Print Network (OSTI)

Secure chaos based multiplex communication system scheme is proposed utilizing globally coupled semiconductor lasers with multiple variable time delay optoelectronic feedbacks.

E. M. Shahverdiev; K. A. Shore

2011-11-06T23:59:59.000Z

345

Peltier cooling stage utilizing a superconductor-semiconductor junction  

SciTech Connect

This paper describes a Peltier cooling stack. It comprises: a first electrode; a superconducting layer electrically coupled to the first electrode; a semiconducting layer electrically coupled to the superconducting layer; and a second superconducting layer electrically coupled to the semiconductor layer; and a second electrode electrically coupled to the second superconducting layer, electrons flowing under an applied voltage from the first electrode through the first superconducting layer, semiconductor layer, second superconducting layer and second electrode, the electrical junction between the first superconducting layer and semiconductor providing Peltier cooling while the electrical junction between the semiconductor layer and the second superconducting layer providing Peltier heating, whereby a cryogenic Peltier cooling stack is provided.

Skertic, M.M.

1991-04-09T23:59:59.000Z

346

Coherence length tunable semiconductor laser with optical feedback  

Science Journals Connector (OSTI)

We report the experimental results to continuously tune the coherence length of a semiconductor laser using an optical feedback scheme. The coherence length can be controlled by...

Wang, Yuncai; Kong, Lingqin; Wang, Anbang; Fan, Linlin

2009-01-01T23:59:59.000Z

347

Organic Semiconductor Chemistry | MIT-Harvard Center for Excitonics  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic Semiconductor Chemistry December 13, 2012 at 3pm36-428 Seth Marder Department of ChemistryBiochemistry, Director, Center for Organic Photonics and Electronics, Georgia...

348

Exchange Coupling in the Ferromagnetic Semiconductor GaMnAs.  

E-Print Network (OSTI)

?? The study of ferromagnetic semiconductors (FMS) continues to be of great interest because of their potential for spintronic devices. While there has been much… (more)

Leiner, Jonathan Carl

2012-01-01T23:59:59.000Z

349

Exchange interaction studies in magnetic semiconductors by neutron scattering.  

E-Print Network (OSTI)

??Theories predict that making a dilute magnetic semiconductor strongly p -type would allow it to remain ferromagnetic at room temperature. This is of intrest as… (more)

Wiren, Zachary Quincy

2008-01-01T23:59:59.000Z

350

New materials and devices for thermoelectric applications  

SciTech Connect

The development of new, more efficient materials and devices is the key to expanding the range of application of thermoelectric generators and coolers. In the last couple of years, efforts to discover breakthrough thermoelectric materials have intensified, in particular in the US. Recent results on novel materials have already demonstrated that dimensionless figure of merit ZT values 40 to 50% larger than 1.0, the current limit, could be obtained in the 475 to 950 K temperature range. New terrestrial power generation applications have been recently described in the literature. There exists a wide range of heat source temperatures for these applications, from low grade waste heat, at 325--350 K, up to 850 to 1,100 K, such as in the heat recovery from a processing plant of combustible solid waste. The automobile industry has also recently developed a strong interest in a waste exhaust heat recovery power source operating in the 375--750 K temperature range to supplement or replace the alternator and thus decrease fuel consumption. Based on results achieved to date at the Jet Propulsion Laboratory (JPL) on novel materials, the performance of an advanced segmented generator design operating in a large 300--945 K temperature gradient is predicted to achieve about 15% conversion efficiency. This would be a very substantial improvement over state-of-the-art (SOA) thermoelectric power converters. Such a terrestrial power generator could be using waste heat or liquid fuels as a heat source. High performance radioisotope generators (RTG) are still of interest for deep space missions but the shift towards small, light spacecraft has developed a need for advanced power sources in the watt to milliwatt range. The powerstick concept would provide a study, compact, lightweight and low cost answer to this need. The development of thin film thermoelectric devices also offer attractive possibilities. The combination of semiconductor technology, thermoelectric films and high thermal conductivity materials could lead to the fabrication of light weight, high voltage devices with high cooling or high electrical power density characteristics. The use of microcoolers for the thermal management of power electronics is of particular interest.

Fleurial, J.P.; Borshchevsky, A.; Caillat, T.; Ewell, R. [California Inst. of Tech., Pasadena, CA (United States). Jet Propulsion Lab.

1997-12-31T23:59:59.000Z

351

Mismatched semiconductor nanowires: growth and characterization  

E-Print Network (OSTI)

of a prototypical phase change material, GeTe, by in-situprototypical phase change material, ger- manium telluride (an introduction to phase change materials as related to data

Yim, Joanne Wing Lan

2011-01-01T23:59:59.000Z

352

Photovoltaic Cell Material Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Material Basics Material Basics Photovoltaic Cell Material Basics August 19, 2013 - 4:43pm Addthis Although crystalline silicon cells are the most common type, photovoltaic (PV), or solar cells, can be made of many semiconductor materials. Each material has unique strengths and characteristics that influence its suitability for specific applications. For example, PV cell materials may differ based on their crystallinity, bandgap, absorbtion, and manufacturing complexity. Learn more about each of these characteristics below or learn about these solar cell materials: Silicon (Si)-including single-crystalline Si, multicrystalline Si, and amorphous Si Polycrystalline Thin Films-including copper indium diselenide (CIS), cadmium telluride (CdTe), and thin-film silicon Single-Crystalline Thin Films-including high-efficiency material

353

Reusing rinse wastewater at a semiconductor plant  

SciTech Connect

Two pilot rinse wastewater reuse projects were developed as part of a long-term water conservation program for a Motorola semiconductor manufacturing site in Phoenix, Ariz. The conceptual designs for the projects grew out of a detailed wastewater reuse study that characterized wastewater streams at their generation points. Both treatment techniques were specifically researched, bench-tested, and adapted to further water conservation efforts while ensuring 100 percent compliance with appropriate effluent regulations and industrial discharge permit conditions. Together, the pilot projects save the city of Phoenix approximately 45 mil gal (17 {times} 10{sup 4} m{sup 3}) of water annually.

Shah, A.R. [Motorola SCG, McDowell, MD (United States). Environmental, Safety, and Industrial Hygiene Dept.; Ploeser, J.H. [Phoenix Water Services Dept., AZ (United States). Water Conservation Office

1999-08-01T23:59:59.000Z

354

Transient Rayleigh scattering from single semiconductor nanowires  

SciTech Connect

Transient Rayleigh scattering spectroscopy is a new pump-probe technique to study the dynamics and cooling of photo-excited carriers in single semiconductor nanowires. By studying the evolution of the transient Rayleigh spectrum in time after excitation, one can measure the time evolution of the density and temperature of photo-excited electron-hole plasma (EHP) as they equilibrate with lattice. This provides detailed information of dynamics and cooling of carriers including linear and bimolecular recombination properties, carrier transport characteristics, and the energy-loss rate of hot electron-hole plasma through the emission of LO and acoustic phonons.

Montazeri, Mohammad; Jackson, Howard E.; Smith, Leigh M. [Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011 (United States); Yarrison-Rice, Jan M. [Department of Physics, Miami University, Oxford, OH 45056 (United States); Kang, Jung-Hyun; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

2013-12-04T23:59:59.000Z

355

Silicon metal-semiconductor-metal photodetector  

DOE Patents (OSTI)

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

356

Silicon metal-semiconductor-metal photodetector  

DOE Patents (OSTI)

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1995-01-01T23:59:59.000Z

357

Design Enablement and Design-Centric Assessment of Future Semiconductor Technologies  

E-Print Network (OSTI)

ITRa] International Technology Roadmap for Semiconductors,ITRb] International Technology Roadmap for Semiconductors,val- ues from ITRS technology roadmap [ITRb] and typical

Abou Ghaida, Rani

2012-01-01T23:59:59.000Z

358

Chemical and Engineering Materials | Neutron Science | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

and novel engineering materials. The user community takes advantage of capabilities of neutron scattering for measurements over wide ranges of experimental and operating...

359

On a mathematical model for hot carrier injection in semiconductors  

E-Print Network (OSTI)

On a mathematical model for hot carrier injection in semiconductors Naoufel Ben Abdallah (1) Pierre of a semiconductor device heavily depends on the injection mechanism of carriers into the active regions through by the relation V bi = U th log N + N \\Gamma ; where U th = kBT=q is the thermal voltage and N + ; N \\Gamma

Schmeiser, Christian

360

Magnetically and electrically tunable semiconductor quantum waveguide inverter  

E-Print Network (OSTI)

Magnetically and electrically tunable semiconductor quantum waveguide inverter M. J. Gilbert,a) R implementations. We present an electrically tunable semiconductor quantum waveguide implementation of an inverter. On the other hand, if a ``0'' is present in the control bit, then the qubit is inverted. In a recent study

Gilbert, Matthew

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Semiconductors 4-bit I2C LED dimmer  

E-Print Network (OSTI)

Philips Semiconductors PCA9533 4-bit I2C LED dimmer Product data sheet Supersedes data of 2003 Sep 19 2004 Oct 01 INTEGRATED CIRCUITS #12;Philips Semiconductors Product data sheet PCA95334-bit I2C LED dimmer 22004 Oct 01 FEATURES · 4 LED drivers (on, off, flashing at a programmable rate) · 2 selectable

Berns, Hans-Gerd

362

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic  

E-Print Network (OSTI)

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic feedback S. The Chaos in the single-mode semiconductor lasers is generated by means of an optoelectronic feedback with optoelectronic feedback has been demonstrated for quite slow data rates by using chaotic wavelength fluctuations

Illing, Lucas

363

Multistability in a semiconductor laser with optoelectronic feedback  

E-Print Network (OSTI)

Multistability in a semiconductor laser with optoelectronic feedback Guang-Qiong Xia1,2 , Sze with delayed optoelectronic feedback is observed experimentally. For a given delay time, the observed dynamical-oscillating semiconductor lasers subject to delayed optoelectronic mutual coupling," Phys. Rev. E 73, 047201-1-4 (2006) 8. G

Chan, Sze-Chun

364

Photonic switching devices based on semiconductor nanostructures  

E-Print Network (OSTI)

Focusing and guiding light into semiconductor nanostructures can deliver revolutionary concepts for photonic devices, which offer a practical pathway towards next-generation power-efficient optical networks. In this review, we consider the prospects for photonic switches using semiconductor quantum dots (QDs) and photonic cavities which possess unique properties based on their low dimensionality. The optical nonlinearity of such photonic switches is theoretically analyzed by introducing the concept of a field enhancement factor. This approach reveals drastic improvement in both power-density and speed, which is able to overcome the limitations that have beset conventional photonic switches for decades. In addition, the overall power consumption is reduced due to the atom-like nature of QDs as well as the nano-scale footprint of photonic cavities. Based on this theoretical perspective, the current state-of-the-art of QD/cavity switches is reviewed in terms of various optical nonlinearity phenomena which have been utilized to demonstrate photonic switching. Emerging techniques, enabled by cavity nonlinear effects such as wavelength tuning, Purcell-factor tuning and plasmonic effects are also discussed.

Chao-Yuan Jin; Osamu Wada

2014-02-26T23:59:59.000Z

365

Distributed Quantum Computation Architecture Using Semiconductor Nanophotonics  

E-Print Network (OSTI)

In a large-scale quantum computer, the cost of communications will dominate the performance and resource requirements, place many severe demands on the technology, and constrain the architecture. Unfortunately, fault-tolerant computers based entirely on photons with probabilistic gates, though equipped with "built-in" communication, have very large resource overheads; likewise, computers with reliable probabilistic gates between photons or quantum memories may lack sufficient communication resources in the presence of realistic optical losses. Here, we consider a compromise architecture, in which semiconductor spin qubits are coupled by bright laser pulses through nanophotonic waveguides and cavities using a combination of frequent probabilistic and sparse determinstic entanglement mechanisms. The large photonic resource requirements incurred by the use of probabilistic gates for quantum communication are mitigated in part by the potential high-speed operation of the semiconductor nanophotonic hardware. The system employs topological cluster-state quantum error correction for achieving fault-tolerance. Our results suggest that such an architecture/technology combination has the potential to scale to a system capable of attacking classically intractable computational problems.

Rodney Van Meter; Thaddeus D. Ladd; Austin G. Fowler; Yoshihisa Yamamoto

2009-09-17T23:59:59.000Z

366

More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging  

SciTech Connect

Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

None

2010-02-01T23:59:59.000Z

367

Mechanics of abrasive wear of elastomeric materials  

E-Print Network (OSTI)

Elastomeric materials are widely used as tire and sealing materials due to their ability to undergo large deformations and conform to the mating surface. However, their applications often result in repeated contact with ...

Qi, Hang, 1971-

2003-01-01T23:59:59.000Z

368

Materials Licenses Available | Tech Transfer | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Materials SHARE Materials 199600248 Thermally Conductive Graphite Foam (Related ID # 199600248, 199800445, 199900728, 199900722, 199900727, 200000788, 200000861, 200201063, 200000892) 199600248 Carbon or Graphite Foam Heating Element for Regulating Engine Fluids 199800555 Imprinting Method for Selective Mesoporous Sorbents 200000798 Method of Improving Surface Properties of Aluminum Alloys by Weld Overlay Cladding 200000831 Improved Gas Storage Carbon with Enhanced Thermal Conductivity 200000835 Humidifier for Fuel Cell Using High Conductivity Carbon Foam 200000842 Field Emission Devices with Carbon Nanofiber Emitters 200000850 A Structure, Method and Process for Controlling Band Offset and Alignment at a Crystalline Oxide on Semiconductor Interface

369

Materials Science  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Science Materials Science Materials Science1354608000000Materials ScienceSome of these resources are LANL-only and will require Remote Access./No/Questions? 667-5809library@lanl.gov Materials Science Some of these resources are LANL-only and will require Remote Access. Key Resources Data Sources Reference Organizations Journals Key Resources CINDAS Materials Property Databases video icon Thermophysical Properties of Matter Database (TPMD) Aerospace Structural Metals Database (ASMD) Damage Tolerant Design Handbook (DTDH) Microelectronics Packaging Materials Database (MPMD) Structural Alloys Handbook (SAH) Proquest Technology Collection Includes the Materials Science collection MRS Online Proceedings Library Papers presented at meetings of the Materials Research Society Data Sources

370

Clathrates as effective p-type and n-type tetrahedral carbon semiconductors  

Science Journals Connector (OSTI)

Based on ab initio calculations, we predict that a carbon clathrate compound (hexagonal C40) is suitable to be n doped by Li insertion and p doped by substitutional boron. This material represents an example of n- and p-type tetrahedral carbon semiconductor, alternative to the n-doped diamondlike films whose realization is still in progress. Although this compound has not been synthesized so far, its study can also provide insights into the properties of nanostructured carbon thin films, grown by supersonic cluster beam deposition techniques that display local morphologies similar to the channels and fullereniclike cages present in the system here investigated.

M. Bernasconi; S. Gaito; G. Benedek

2000-05-15T23:59:59.000Z

371

Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication  

SciTech Connect

Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palto Alto, CA)

2002-01-01T23:59:59.000Z

372

Unique Configuration of a Nitrogen-Doped Graphene Nanoribbon: Potential Applications to Semiconductor and Hydrogen Fuel Cell  

Science Journals Connector (OSTI)

Unique Configuration of a Nitrogen-Doped Graphene Nanoribbon: Potential Applications to Semiconductor and Hydrogen Fuel Cell ... Further examination on oxygen adsorption at NTSG reveals high electrocatalytic activity of NTSG in oxygen reduction reaction, indicating that this nitrogen-doped graphene material could be used as a potential catalyst for hydrogen fuel cells. ... (48) One recent theoretical work has also disclosed that the nitrogen-doped fullerene could be used as a potential catalyst for hydrogen fuel cells. ...

Hong Zheng; Jia-jia Zheng; Ling He; Xiang Zhao

2014-09-22T23:59:59.000Z

373

Proc. Fifteenth IEEE Semiconductor Thermal Measurement and Management Symposium, March 9-11, 1999, San Diego CA, IEEE # 99CH36306.  

E-Print Network (OSTI)

Proc. Fifteenth IEEE Semiconductor Thermal Measurement and Management Symposium, March 9-11, 1999, San Diego CA, IEEE # 99CH36306. 74 THERMAL MANAGEMENT USING "DRY" PHASE CHANGE MATERIALS R.A. Wirtz" PCM unit conductance D Heat sink depth htr Heat of transition H Fin height Hpcm PCM mass depth kal

Wirtz, Richard A.

374

Control of coherence resonance in semiconductor superlattices  

E-Print Network (OSTI)

We study the effect of time-delayed feedback control and Gaussian white noise on the spatio-temporal charge dynamics in a semiconductor superlattice. The system is prepared in a regime where the deterministic dynamics is close to a global bifurcation, namely a saddle-node bifurcation on a limit cycle ({\\it SNIPER}). In the absence of control, noise can induce electron charge front motion through the entire device, and coherence resonance is observed. We show that with appropriate selection of the time-delayed feedback parameters the effect of coherence resonance can either be enhanced or destroyed, and the coherence of stochastic domain motion at low noise intensity is dramatically increased. Additionally, the purely delay-induced dynamics in the system is investigated, and a homoclinic bifurcation of a limit cycle is found.

Johanne Hizanidis; Eckehard Schoell

2008-09-01T23:59:59.000Z

375

Hybrid Semiconductors for Hardier Electronics and Optoelectronics? |  

NLE Websites -- All DOE Office Websites (Extended Search)

Unveiling the Molecular Structure of the Target of Many Drugs Unveiling the Molecular Structure of the Target of Many Drugs A New Scenario for First Life on Earth Surface Orbital 'Roughness' in Colossal Magnetoresistive Oxide Different Roads Toward Quantum Criticality Orbital Reconstruction at a Complex Oxide Interface Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Hybrid Semiconductors for Hardier Electronics and Optoelectronics? DECEMBER 21, 2007 Bookmark and Share The crystal structure of β-ZnTe(en)0:5, determined by single-crystal x-ray diffraction. Two-monolayerthick ZnTe slabs are interconnected by ethylenediamine (C2N2H8) molecules bonded to zinc atoms. Zn-Green, Te-Red, N-Blue,and C-Gray. Hydrogen atoms are omitted for clarity.

376

Nonlinear Peltier effect in semiconductors Mona Zebarjadia  

E-Print Network (OSTI)

.1063/1.2785154 The Peltier coefficient plays an important role on how good a material is for thermoelectric solid thermoelectric transport in GaAs family of materials. The code is three dimensional both in k an an applied bias. Analytical results are in agreement with numerical simulations. Key material parameters

377

Reference Material  

NLE Websites -- All DOE Office Websites (Extended Search)

Reference Materials There are a variety of reference materials the NSSAB utilizes and have been made available on its website. Documents Fact Sheets - links to Department of Energy...

378

Materials Science  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Science science-innovationassetsimagesicon-science.jpg Materials Science National security depends on science and technology. The United States relies on Los Alamos...

379

Large-area semiconductor detectors of beta radiation  

SciTech Connect

This paper describes silicon semiconductor detectors with a diameter of 90 mm with hole-type conduction. The detectors had been grown with the Czochralski technique and had a specific resistivity lambda - 12 omega /SUP ./ cm and a carrier lifetime tau = 50 usec. In the case of semiconductor detectors for counting, silicon grown from a melt has its advantages because the distribution of the specific resistivity in low-resistivity semiconductor crystals is more homogeneous than in high-resistivity crystals in both longitudinal and transverse direactions relative to the axis of crystal growth.

Azimov, S.A.; Baizakov, B.B.; Karpov, V.S.; Muminov, R.A.

1986-08-01T23:59:59.000Z

380

DOE Announces Webinars on Zero Energy Ready Homes, Wide Bandgap Semiconductors for Fuel Cell Applications, and More  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE offers webinars to the public on a range of subjects, from adopting the latest energy efficiency and renewable energy technologies, to training for the clean energy workforce. Webinars are free; however, advanced registration is typically required. You can also watch archived webinars and browse previously aired videos, slides, and transcripts.

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Varian Semiconductor Equipment Associates Inc VSEA | Open Energy  

Open Energy Info (EERE)

Varian Semiconductor Equipment Associates Inc VSEA Varian Semiconductor Equipment Associates Inc VSEA Jump to: navigation, search Name Varian Semiconductor Equipment Associates Inc (VSEA) Place Gloucester, Massachusetts Zip 1930 Sector Services Product Massachusetts-based, designs, manufactures, and services semiconductor processing equipment used in the fabrication of integrated circuits. Coordinates 37.413962°, -76.526305° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.413962,"lon":-76.526305,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

382

Ramgraber Semiconductor Equipment GmbH | Open Energy Information  

Open Energy Info (EERE)

Ramgraber Semiconductor Equipment GmbH Ramgraber Semiconductor Equipment GmbH Jump to: navigation, search Name Ramgraber Semiconductor Equipment GmbH Place Brunnthal, Germany Zip 85649 Sector Solar Product Makes semiconductor processing equipment, including solar cell manufacturing lines. Coordinates 48.006898°, 11.684687° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":48.006898,"lon":11.684687,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

383

Generating dispatching rules for semiconductor manufacturing to minimize weighted tardiness  

Science Journals Connector (OSTI)

Dispatching rules play an important role especially in semiconductor manufacturing scheduling, because these fabrication facilities are characterized by high complexity and dynamics. The process of developing and adapting dispatching rules is currently ...

Christoph Pickardt; Jürgen Branke; Torsten Hildebrandt; Jens Heger; Bernd Scholz-Reiter

2010-12-01T23:59:59.000Z

384

Semiconductor Laser Lidar Wind Velocity Sensor for Turbine Control  

Science Journals Connector (OSTI)

A dual line-of-sight CW lidar that measures both wind speed and direction is presented. The wind lidar employs a semiconductor laser, which allows for inexpensive remote sensors geared...

Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

385

Review of the Semiconductor Industry and Technology Roadmap  

Science Journals Connector (OSTI)

The semiconductor industry operates in a constant state of deflation. It is vital to our survival and progress in this knowledge era. The industry is extremely competitive and requires ongoing technological advan...

Sameer Kumar; Nicole Krenner

2002-09-01T23:59:59.000Z

386

Translating semiconductor device physics into nanoparticle films for electronic applications  

E-Print Network (OSTI)

This thesis explores and quantifies some of the important device physics, parameters, and mechanisms of semiconductor nanocrystal quantum dot (QD) electronic devices, and photovoltaic devices in particular. This involves ...

Wanger, Darcy Deborah

2014-01-01T23:59:59.000Z

387

Improving reuse of semiconductor equipment through benchmarking, standardization, and automation  

E-Print Network (OSTI)

The 6D program at Intel® Corporation was set up to improve operations around capital equipment reuse, primarily in their semiconductor manufacturing facilities. The company was faced with a number of challenges, including ...

Silber, Jacob B. (Jacob Bradley)

2006-01-01T23:59:59.000Z

388

Planar graphene-narrow-gap semiconductor-graphene heterostructure  

Science Journals Connector (OSTI)

A planar heterostructure composed of two graphene films between which a narrow-gap semiconductor ... paradox is absent when conical points of the graphene Brillouin zone are in the band gap...

P. V. Ratnikov; A. P. Silin

2008-11-01T23:59:59.000Z

389

Energy Conservation Through Water Usage Reduction in the Semiconductor Industry  

E-Print Network (OSTI)

ENERGY CONSERVATION THROUGH WATER USAGE REDUCTION IN THE SEMICONDUCTOR INDUSTRY Laura Mendicino Kathy McCormack Sarah Gibson Bob Patton Dana Lyon Jeff Covington Engineer Engineer ESrn Manager Engineer Engineer Engineer Motorola Austin, TX...

Mendicino, L.; McCormack, K.; Gibson, S.; Patton, B.; Lyon, D.; Covington, J.

390

Facts and Artifacts in the Blinking Statistics of Semiconductor Nanocrystals  

Science Journals Connector (OSTI)

Since its initial discovery just over a decade ago, blinking of semiconductor nanocrystals has typically been described in terms of probability distributions for durations of bright, or “on,” states and dark, or “off,” states. These distributions are ...

Catherine H. Crouch; Orion Sauter; Xiaohua Wu; Robert Purcell; Claudia Querner; Marija Drndic; Matthew Pelton

2010-04-05T23:59:59.000Z

391

Data sheet acquired from Harris Semiconductor Buffered Inputs  

E-Print Network (OSTI)

1 Data sheet acquired from Harris Semiconductor SCHS121D Features · Buffered Inputs · Typical. The suffixes 96 and R denote tape and reel. The suffix T denotes a small-quantity reel of 250. CAUTION

Kretchmar, R. Matthew

392

Data sheet acquired from Harris Semiconductor Four Operating Modes  

E-Print Network (OSTI)

1 Data sheet acquired from Harris Semiconductor SCHS164F Features · Four Operating Modes - Shift Ld PDIP NOTE: When ordering, use the entire part number. The suffixes 96 and R denote tape and reel

Kretchmar, R. Matthew

393

Semiconductor Aspects of Organic Bulk Heterojunction Solar Cells  

Science Journals Connector (OSTI)

During the last few years organic solar cells have been discussed as a promising alternative to inorganic semiconductors for renewable energy production. These organic photovoltaic devices offer the possibility o...

Christoph J. Brabec

2003-01-01T23:59:59.000Z

394

Ultrafast nonlinear optical properties of passive and active semiconductor devices  

E-Print Network (OSTI)

Nonlinear optical properties and ultrafast carrier dynamics of slab-coupled optical waveguide amplifiers, silicon nanowaveguides, and III-V semiconductor saturable Bragg reflectors are studied. The limits imposed by two ...

Motamedi, Ali Reza

2011-01-01T23:59:59.000Z

395

Phenomenological band structure model of magnetic coupling in semiconductors  

E-Print Network (OSTI)

Phenomenological band structure model of magnetic coupling in semiconductors Gustavo M. Dalpian a,1­18]. Several models have been proposed to explain the phenomena, including the phenomenological Zener

Gong, Xingao

396

Enterprise-Wide Agreements | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Enterprise-Wide Enterprise-Wide Agreements Enterprise-Wide Agreements DOE's Office of the Chief Information Officer (OCIO) has designed the IT Acquisition: Enterprise-Wide Agreement (EWA) Program to develop and implement policies and procedures that support the identification, acquisition, oversight and compliance of enterprise licenses. EWAs are Department-wide acquisitions of widely used commercial software. The EWA Program has two core objectives to achieve the Program mission : Maximizing IT buying power and reducing total cost of ownership; Streamlining the IT total acquisition lifecycle. The EWA Program applies a centralized, cross-functional, strategic enterprise software solutions approach. The EWA Program leverages opportunities to create efficiencies and enhances the value of IT

397

Wide-gap a-Si:H fabricated by controlling voids  

SciTech Connect

High quality wide gap hydrogenated amorphous silicon has been prepared using the chemical annealing technique. It was possible to prepare materials with band gaps ranging 1.8 to 2.1 eV by varying the preparation parameters. Low defect densities less than (3--8) {times} 10{sup 15} cm{sup {minus}3} could be maintained over the entire band gap range. Improved stability for light soaking was also observed in the wide gap materials.

Yoshino, K.; Futako, W.; Wasai, Y.; Shimizu, I. [Tokyo Inst. of Tech., Yokohama (Japan). Graduate School

1996-12-31T23:59:59.000Z

398

DFAS Wide-Area Workflow Issues  

Energy.gov (U.S. Department of Energy (DOE))

Presentation covers the DFAS wide-area workflow issues and is given at the Spring 2011 Federal Utility Partnership Working Group (FUPWG) meeting.

399

Optical limiting materials  

DOE Patents (OSTI)

Optical limiting materials. Methanofullerenes, fulleroids and/or other fullerenes chemically altered for enhanced solubility, in liquid solution, and in solid blends with transparent glass (SiO.sub.2) gels or polymers, or semiconducting (conjugated) polymers, are shown to be useful as optical limiters (optical surge protectors). The nonlinear absorption is tunable such that the energy transmitted through such blends saturates at high input energy per pulse over a wide range of wavelengths from 400-1100 nm by selecting the host material for its absorption wavelength and ability to transfer the absorbed energy into the optical limiting composition dissolved therein. This phenomenon should be generalizable to other compositions than substituted fullerenes.

McBranch, Duncan W. (Santa Fe, NM); Mattes, Benjamin R. (Santa Fe, NM); Koskelo, Aaron C. (Los Alamos, NM); Heeger, Alan J. (Santa Barbara, CA); Robinson, Jeanne M. (Los Alamos, NM); Smilowitz, Laura B. (Los Alamos, NM); Klimov, Victor I. (Los Alamos, NM); Cha, Myoungsik (Goleta, CA); Sariciftci, N. Serdar (Santa Barbara, CA); Hummelen, Jan C. (Groningen, NL)

1998-01-01T23:59:59.000Z

400

8 - Ceramic materials  

Science Journals Connector (OSTI)

Ceramic materials, manufactured from fired clay, have been used in construction since at least 4000 BC in Egypt, and represent the earliest manufactured building materials. Whilst the strict definition of ceramics includes glass, stone and cement, this chapter deals only with the traditional ceramics based on clays. The variety of traditional ceramic products used within the building industry arises from the wide range of natural and blended clays used for their production. The roof of the spectacular Sydney Opera House (Fig. 8.1) is surfaced with white ceramic tiles which reflect the changing light associated with the time of day.

Arthur Lyons

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Installation of semiconductor crystal growth and processing facilities in the Building 166 addition at Lawrence Livermore National Laboratory  

SciTech Connect

A new addition has been constructed to Building 166 at Lawrence Livermore National Laboratory (LLNL). This addition is intended to contain facilities as described below. The Metalorganic Chemical Vapor Deposition (MOCVD) facility is a proposed facility for the growth of semiconductor crystals composed of various combinations of gallium, aluminum, indium, arsenic, phosphorous, antimony, silicon, and zinc. This facility will utilize hazardous metal hydride gases (arsine, silane, and disilane) and pyrophoric materials (metal alkyls). The MOCVD process has been intensively developed over the past 10 years and is being safetly utilized in over 75 locations worldwide in both research and manufacturing applications. All equipment in the LLNL MOCVD facility is commercially available and is typical of that used in similar facilities in both industry and academia. The Semiconductor Device Fabrication (SDF) facility is a proposed facility for the fabrication of semiconductor devices from crystals grown in the MOCVD facility. General laboratory chemicals and silane gas will be utilized in this facility. The remaining space in the building addition will consist of an optics laboratory and general purpose work area. The only hazardous materials to be used in these areas are small quantities of common laboratory solvents. For the purposes of this Environmental Assessment, these areas will be considered to be part of the SDF. 27 refs., 4 figs., 6 tabs.

Not Available

1990-08-01T23:59:59.000Z

402

Low-temperature Peltier heat of an itinerant electron in a ferromagnetic semiconductor  

SciTech Connect

The Peltier heat of a wide-band itinerant carrier in a ferromagnetic semiconductor has been calculated for temperatures below the Curie temperature. In this regime we treat the spin fluctuations within the spin-wave approximation. The coupling of the charge carrier to the local moments is via local intra-atomic (e.g., s-f or s-d) exchange. Taking the strength of the intra-atomic exchange interaction to be small compared with the carrier's electronic bandwidth, we treat the interaction between the carrier and the local moments perturbatively through second order. We use the perturbed energy to compute the free energy of the coupled electron-magnon system. From the carrier-induced change of the system's free energy we directly obtain the carrier's Peltier heat. The Peltier heat contains two terms of opposite sign which both increase in magnitude with increasing temperature. These two terms arise from the first- and second-order contributions to the energy of the coupled system. Except at very low temperatures, the first-order contribution dominates. Then the electron-magnon interaction provides a negative contribution to the Peltier heat of a ferromagnetic semiconductor. The magnitude of this contribution varies as T/sup 3/2/.

Liu, N.H.; Emin, D.

1985-08-15T23:59:59.000Z

403

Applied Materials Inc AMAT | Open Energy Information  

Open Energy Info (EERE)

Inc AMAT Inc AMAT Jump to: navigation, search Name Applied Materials Inc (AMAT) Place Santa Clara, California Zip 95052-8039 Sector Solar Product US-based manufacturer of equipment used in solar (silicon, thin-film, BIPV), semiconductor, and LCD markets. References Applied Materials Inc (AMAT)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Applied Materials Inc (AMAT) is a company located in Santa Clara, California . References ↑ "Applied Materials Inc (AMAT)" Retrieved from "http://en.openei.org/w/index.php?title=Applied_Materials_Inc_AMAT&oldid=342244" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes

404

Functional materials: electronics, information and sensors  

Science Journals Connector (OSTI)

Functional materials are those that have properties enabling them to preform a specific functional purpose, e.g. electrical, magnetic or optical. The rapid development of the technology of transistors and intergrated circuits will continue into the future with design incorporating new materials, notably gallium arsenide. Silica glass is finding increasing application in photonics, light emitting diodes and optical fibres for telephone cables. Optical-fibre technology depends on reliable and durable lasers which now use compound semiconductors such as indium-gallium-arsenide phosphide. It is anticipated that new materials application (indium-gallium-arsenide phosphide) will contribute towards progress in photovoltaics. Interest in superconducting material has heightened during 1980s with the promise that high-temperature superconductivity offers for more-efficient power generation and transmission. In future advantage will come from developing economic and reliable ways of producing functional materials to meet increasing demand.

Merton C. Flemings

1990-01-01T23:59:59.000Z

405

Production of films and powders for semiconductor device applications  

DOE Patents (OSTI)

A process is described for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu{sub x}Se{sub n}, wherein x=1--2 and n=1--3; (2) Cu{sub x}Ga{sub y}Se{sub n}, wherein x=1--2, y=0--1 and n=1--3; (3) Cu{sub x}In{sub y}Se{sub n}, wherein x=1--2.27, y=0.72--2 and n=1--3; (4) Cu{sub x}(InGa){sub y}Se{sub n}, wherein x=1--2.17, y=0.96--2 and n=1--3; (5) In{sub y}Se{sub n}, wherein y=1--2.3 and n=1--3; (6) Cu{sub x}S{sub n}, wherein x=1--2 and n=1--3; and (7) Cu{sub x}(InGa){sub y}(SeS){sub n}, wherein x=1--2, y=0.07--2 and n=0.663--3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes. 4 figs.

Bhattacharya, R.N.; Noufi, R.; Li Wang

1998-03-24T23:59:59.000Z

406

Novel silane and disilane precursors to amorphous semiconductors: Final subcontract report, May 1988  

SciTech Connect

This Final Report describes the preparation and characterization of amorphous fluorohydrogenated silicon thin films. The novel approach in this study lies in the use of fluorinated silanes as film precursors. The advantages of this method are well defined initial ratios of hydrogen and fluorine to silicon and greatly reduced hazards in the handling of the gas. Fluorine derivatives of both silane and disilane were synthesized. Both glow discharge (or plasma-enhanced CVD) and thermal (CVD) methods were employed to prepare amorphous silicon on glass and silicon wafers. The electrical characterization of the material prepared from difluorosilane showed that the a-Si:H:F films obtained are of solar-grade semiconductor quality and can be doped to p- and n-type materials with diborane and phosphine. 29 refs., 24 figs., 10 tabs.

Pernisz, U.C.; Sharp, K.G.

1988-09-01T23:59:59.000Z

407

Synthesis of thin films and materials utilizing a gaseous catalyst  

DOE Patents (OSTI)

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

408

Materializing energy  

Science Journals Connector (OSTI)

Motivated and informed by perspectives on sustainability and design, this paper draws on a diverse body of scholarly works related to energy and materiality to articulate a perspective on energy-as-materiality and propose a design approach of ... Keywords: design, design theory, energy, materiality, sustainability

James Pierce; Eric Paulos

2010-08-01T23:59:59.000Z

409

Nanocluster-based white-light-emitting material employing surface tuning  

DOE Patents (OSTI)

A method for making a nanocrystal-based material capable of emitting light over a sufficiently broad spectral range to appear white. Surface-modifying ligands are used to shift and broaden the emission of semiconductor nanocrystals to produce nanoparticle-based materials that emit white light.

Wilcoxon, Jess P. (Albuquerque, NM); Abrams, Billie L. (Albuquerque, NM); Thoma, Steven G. (Albuquerque, NM)

2007-06-26T23:59:59.000Z

410

Integrated NanoMaterials Core Facility California NanoSystems Institute at UCLA  

E-Print Network (OSTI)

development, renewable energy platforms, and more. INML Website: http://inml.cnsi.ucla.edu/pages/ Contact skills are required in MBE machine maintenance, III-V semiconductor epitaxy growth, and materials of dissimilar materials using epitaxial processes. Our mission is to offer our users world-class, highly

Jalali. Bahram

411

NREL: Photovoltaics Research - New Materials, Devices, and Processes for  

NLE Websites -- All DOE Office Websites (Extended Search)

New Materials, Devices, and Processes for Advanced Concepts New Materials, Devices, and Processes for Advanced Concepts Computational Science and Theory We can use high-performance computing tools in modeling and simulation studies of semiconductor and other solar materials. We also determine the performance of solar devices. Theoretical studies can help us understand underlying physical principles or predict useful chemical compositions and crystalline structures. Scientific Computing Experimental Materials Science Solid-State Theory. NREL has strong complementary research capabilities in organic photovoltaic (OPV) cells, transparent conducting oxides (TCOs), combinatorial (combi) methods, and atmospheric processing. From fundamental physical studies to applied research relating to solar industry needs, we are developing the

412

Agency-Wide Screening | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Agency-Wide Screening Agency-Wide Screening Agency-Wide Screening October 16, 2013 - 4:36pm Addthis Federal agencies face energy-related requirements on new construction projects and major renovations. These Federal requirements range from reductions in fossil-fuel use to specifying the use of certain renewable energy technologies. As some agencies have already found out, not all sites or construction projects are created equal. Because many of the requirements are agency-wide, an effective and efficient way to meet these requirements is to consider and identify appropriate locations for these technologies across all agency land and building assets. FEMP can help Federal agencies conduct a renewable energy screening at all of its sites, or just at all of its upcoming construction project

413

West Wide Programmatic Environmental Impact Statement Record...  

Open Energy Info (EERE)

LibraryAdd to library Legal Document- OtherOther: West Wide Programmatic Environmental Impact Statement Record of Decision (BLM)Legal Published NA Year Signed or Took Effect...

414

Method and apparatus for determining minority carrier diffusion length in semiconductors  

DOE Patents (OSTI)

Method and apparatus are provided for determining the diffusion length of minority carriers in semiconductor material, particularly amorphous silicon, which has a significantly small minority carrier diffusion length using the constant magnitude surface-photovoltage (SPV) method. Steady or modulated illumination at several wavelengths provides the light excitation on the surface of the material to generate the SPV. A manually controlled or automatic servo system maintains a constant predetermined value of the SPV for each wavelength. A probe electrode immersed in an electrolyte solution containing redox couples (preferably quinhydrone) having an oxidation-reduction potential (E) in the order of +0.6 to -1.65 volts couples the SPV to a measurement system. The redox couple solution functions to create a liquid Schottky barrier at the surface of the material. The Schottky barrier is contacted by merely placing the probe in the solution. The redox solution is placed over and in contact with the material to be tested and light is passed through the solution to generate the SPV. To compensate for colored redox solutions a portion of the redox solution not over the material is also illuminated for determining the color compensated light intensity. Steady red light is also used as an optical bias to reduce deleterious space-charge effects that occur in amorphous silicon.

Moore, Arnold R. (Princeton, NJ)

1984-02-21T23:59:59.000Z

415

Scintillator material  

DOE Patents (OSTI)

An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography.

Anderson, David F. (Batavia, IL); Kross, Brian J. (Aurora, IL)

1992-01-01T23:59:59.000Z

416

Scintillator material  

DOE Patents (OSTI)

An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography. 4 figs.

Anderson, D.F.; Kross, B.J.

1994-06-07T23:59:59.000Z

417

Scintillator material  

DOE Patents (OSTI)

An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography. 4 figs.

Anderson, D.F.; Kross, B.J.

1992-07-28T23:59:59.000Z

418

Scintillator material  

DOE Patents (OSTI)

An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography.

Anderson, David F. (Batavia, IL); Kross, Brian J. (Aurora, IL)

1994-01-01T23:59:59.000Z

419

Advanced Materials  

NLE Websites -- All DOE Office Websites (Extended Search)

Advanced Materials Advanced Materials Advanced Materials Express Licensing Active Terahertz Metamaterial Devices Express Licensing Anion-Conducting Polymer, Composition, And Membrane Express Licensing Analysis Of Macromolecule, Liggands And Macromolecule-Lingand Complexes Express Licensing Carbon Microtubes Express Licensing Chemical Synthesis Of Chiral Conducting Polymers Express Licensing Forming Adherent Coatings Using Plasma Processing Express Licensing Hydrogen Scavengers Express Licensing Laser Welding Of Fused Quartz Express Licensing Multiple Feed Powder Splitter Negotiable Licensing Boron-10 Neutron Detectors for Helium-3 Replacement Negotiable Licensing Insensitive Extrudable Explosive Negotiable Licensing Durable Fuel Cell Membrane Electrode Assembly (MEA) Express Licensing Method of Synthesis of Proton Conducting Materials

420

Critical Materials:  

Office of Environmental Management (EM)

lighting. 14 (bottom) Criticality ratings of shortlisted raw 76 materials. 15 77 2. Technology Assessment and Potential 78 This section reviews the major trends within...

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Optoelectronic cooling of mechanical modes in a semiconductor nanomembrane  

E-Print Network (OSTI)

Optical cavity cooling of mechanical resonators has recently become a research frontier. The cooling has been realized with a metal-coated silicon microlever via photo-thermal force and subsequently with dielectric objects via radiation pressure. Here we report cavity cooling with a crystalline semiconductor membrane via a new mechanism, in which the cooling force arises from the interaction between the photo-induced electron-hole pairs and the mechanical modes through the deformation potential coupling. The optoelectronic mechanism is so efficient as to cool a mode down to 4 K from room temperature with just 50 uW of light and a cavity with a finesse of 10 consisting of a standard mirror and the sub-wavelength-thick semiconductor membrane itself. The laser-cooled narrow-band phonon bath realized with semiconductor mechanical resonators may open up a new avenue for photonics and spintronics devices.

K. Usami; A. Naesby; T. Bagci; B. Melholt Nielsen; J. Liu; S. Stobbe; P. Lodahl; E. S. Polzik

2010-11-22T23:59:59.000Z

422

Identification and sizing of particle defects in semiconductor-wafer processing  

Science Journals Connector (OSTI)

An experimental study of the sizing of submicron particles on semiconductor wafers is presented. The objective of the study was to determine the accuracy of a state-of-the-art optical wafer scanner by comparing its size response with that of two well established techniques namely differential mobility analysis (DMA) and secondary electronmicroscopy(SEM). Test particles used include polystyrene–latex spheres and SiO 2 Si 3 N 4 W and Cu particles of 64 107 and 202 nm nominal (DMA) sizes. The scanner-indicated sizes using the oblique and normal operational modes were compared to the DMA sizes and to average sizes determined from the SEM images. Results show that the scanner-indicated size is comparable to the SEM-indicated size. However both the scanner size and SEM size exhibit large distributions for a given nominal (DMA) size. The discrepancies are due to a combination of factors such as the effects of particle shape and material and the presence of larger doubly charged particles among those analyzed. A comparison of the normal and oblique scanner operational mode results for the scanner further show that the normal mode undersizes particles somewhat. These results collectively indicate that accurate sizing of complex and unknown submicron sized particles on semiconductor wafers is not an easy task. A thorough understanding of the scanner response to a variety of process particles is essential for the meaningful interpretation of scanning results.

Seong-Ho Yoo; James Weygand; Juergen Scherer; Lawrence Davis; Benjamin Liu; Kurt Christenson; Jeffery Butterbaugh; Natraj Narayanswami

2001-01-01T23:59:59.000Z

423

Electrocoagulation: A Technology for Water Recycle and Wastewater Treatment in Semiconductor Manufacturing  

E-Print Network (OSTI)

Electrocoagulation: A Technology for Water Recycle and Wastewater Treatment in Semiconductor of treating wastewater streams in the semiconductor manufacturing industry. Electrocoagulation involves wastewater is increasing greatly. The objective is that by using EC to treat wastewater streams, this water

Fay, Noah

424

E-Print Network 3.0 - active fabry-perot semiconductor Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

Physics 45 The Laser DiodeThe Laser Diode Jason HillJason Hill Summary: to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n...

425

Thin film reactions on alloy semiconductor substrates  

SciTech Connect

The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

Olson, D.A.

1990-11-01T23:59:59.000Z

426

Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers  

SciTech Connect

The field of spintronics offers perspectives for seamless integration of coupled and inter-tunable electrical and magnetic properties in a single device. For integration of the spin degree of freedom with current electronic technology, new semiconductors are needed that show electrically-tunable magnetic properties at room temperature and above. Dilute magnetic semiconductors derived from III-V compounds, like GaMnAs and InMnAs, show coupled and tunable magnetic, transport, and optical properties, due to the fact that their ferromagnetism is hole-mediated. These unconventional materials are ideal systems for manipulating the magnetic order by changing the carrier polarization, population density, and energy band distribution of the complementary subsystem of holes. This is the main theme we cover in this thesis. In particular, we develop a unique setup by use of ultraviolet pump, near-infrared probe femtosecond laser pulses, that allows for magneto-optical Kerr effect (MOKE) spectroscopy experiments. We photo-excite transient carriers in our samples, and measure the induced transient magnetization dynamics. One set of experiments performed allowed us to observe for the first time enhancement of the ferromagnetic order in GaMnAs, on an ultrafast time scale of hundreds of picoseconds. The corresponding transient increase of Curie temperature (Tc, the temperature above which a ferromagnetic material loses its permanent magnetism) of about 1 K for our experimental conditions is a very promising result for potential spintronics applications, especially since it is seconded by observation of an ultrafast ferromagnetic to paramagnetic phase transition above Tc. In a different set of experiments, we"write" the magnetization in a particular orientation in the sample plane. Using an ultrafast scheme, we alter the distribution of holes in the system and detect signatures of the particular memory state in the subsequent magnetization dynamics, with unprecedented hundreds of femtosecond detection speed. The femtosecond cooperative magnetic phenomena presented here further our understanding of Mn-hole correlations in III-V dilute magnetic semiconductors, and may well represent universal principles of a large class of carrier-mediated ferromagnetic materials. Thus they offer perspectives for future terahertz (1012 Hz) speed"spintronic" functional devices.

Cotoros, Ingrid A.

2008-12-12T23:59:59.000Z

427

Quasi-continuum photoluminescence: Unusual broad spectral and temporal characteristics found in defective surfaces of silica and other materials  

SciTech Connect

We previously reported a novel photoluminescence (PL) with a distribution of fast decay times in fused silica surface flaws that is correlated with damage propensity by high fluence lasers. The source of the PL was not attributable to any known silica point defect. Due to its broad spectral and temporal features, we here give this PL the name quasi-continuum PL (QC-PL) and describe the features of QC-PL in more detail. The primary features of QC-PL include broad excitation and emission spectra, a broad distribution of PL lifetimes from 20 ps to 5?ns, continuous shifts in PL lifetime distributions with respect to emission wavelength, and a propensity to photo-bleach and photo-brighten. We found similar PL characteristics in surface flaws of other optical materials, including CaF{sub 2}, DKDP, and quartz. Based on the commonality of the features in different optical materials and the proximity of QC-PL to surfaces, we suggest that these properties arise from interactions associated with high densities of defects, rather than a distribution over a large number of types of defects and is likely found in a wide variety of structures from nano-scale composites to bulk structures as well as in both broad and narrow band materials from dielectrics to semiconductors.

Laurence, Ted A., E-mail: laurence2@llnl.gov; Bude, Jeff D.; Shen, Nan; Steele, William A.; Ly, Sonny [Physical and Life Sciences and National Ignition Facility, Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550 (United States)

2014-02-28T23:59:59.000Z

428

POWER SEMICONDUCTORS—STATE OF ART AND FUTURE TRENDS  

Science Journals Connector (OSTI)

The importance of effective energy conversion control including power generation from renewable and environmentally clean energy sources increases due to rising energy demand. Power electronic systems for controlling and converting electrical energy have become the workhorse of modern society in many applications both in industry and at home. Power electronics plays a very important role in traction and can be considered as brawns of robotics and automated manufacturing systems. Power semiconductor devices are the key electronic components used in power electronic systems. Advances in power semiconductor technology have improved the efficiency size weight and cost of power electronic systems.

Vitezslav Benda

2011-01-01T23:59:59.000Z

429

Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication  

DOE Patents (OSTI)

Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

Sopori, Bhushan

2014-05-27T23:59:59.000Z

430

Hanfords Site-Wide Permit  

NLE Websites -- All DOE Office Websites (Extended Search)

* Across entire Hanford Site ("Facility") What the permit does NOT cover * Solely radioactive materials * Superfund sites How does the permit protect? * Requirements for...

431

Solid State Lighting Semiconductor Spectroscopy & Devices  

E-Print Network (OSTI)

than a light bulb, but they contain traces of toxic materials. LEDs utilise the movement of electrons information: jochen.bruckbauer@strath.ac.uk Overview Conventional light sources, like the light bulb and fluorescent lamps, are very inefficient in transforming energy into light. Due to upcoming problems in energy

Strathclyde, University of

432

Semiconductor electronics: Organic crystals at large  

Science Journals Connector (OSTI)

... In the future, substrates might also include flexible and less brittle materials such as plastic foils. One particular improvement involves recrystallizing the amorphous film into a polycrystalline film consisting of ... difficult to scale the process up to an industrial level for substrates such as plastic foil that cannot withstand elevated temperatures. ...

Paul Heremans

2006-12-13T23:59:59.000Z

433

Streamlining the supply chain information system of the semiconductor industry using multi-XML schema  

Science Journals Connector (OSTI)

This study develops a supply chain informational infrastructure that streamlines message exchange among partners in the semiconductor industry to enhance the performance of the semiconductor industry's supply chain system, from the upstream IC design ... Keywords: XML), e-commerce, electronic commerce, extensible markup language (, metadata 1, production information management, semiconductor industry supply chain

Ruey-Shun Chen; Kung-Yung Lu; Yen-Ming Chu

2004-05-01T23:59:59.000Z

434

Advanced semiconductor fabrication process control using dual filter exponentially weighted moving average  

Science Journals Connector (OSTI)

Semiconductor industry needs to meet high standards to ensure survival and success in the 21st century. Rising expectations from the customers are demanding the semiconductor industry to manufacture products with both accuracy and precision. To comply ... Keywords: Dual filter EWMA, EWMA, Process control, Run-to-run, Semiconductor fabrication process

Hyo-Heon Ko; Jihyun Kim; Sang-Hoon Park; Jun-Geol Baek; Sung-Shick Kim

2012-06-01T23:59:59.000Z

435

Draft Site-Wide Environmental Impact Statement  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Site-Wide Environmental Impact Statement Site-Wide Environmental Impact Statement for the Y-12 National Security Complex October 2009 U.S. Department of Energy National Nuclear Security Administration Y-12 Site Office DOE/EIS-0387 COVER SHEET RESPONSIBLE AGENCY: United States (U.S.) Department of Energy (DOE), National Nuclear Security Administration (NNSA) TITLE: Draft Site-wide Environmental Impact Statement for the Y-12 National Security Complex (DOE/EIS-0387) (Draft Y-12 SWEIS) CONTACT: For further information on this SWEIS, For general information on the DOE contact: National Environmental Policy Act (NEPA) process, contact: Pam Gorman Carol Borgstrom, Director Y-12 SWEIS Document Manager Office of NEPA Policy and Compliance, GC-20 Y-12 Site Office U.S. Department of Energy

436

Wide field imaging of distant clusters  

E-Print Network (OSTI)

Wide field imaging is key to understanding the build-up of distant clusters and their galaxy population. By focusing on the so far unexplored outskirts of clusters, where infalling galaxies first hit the cluster potential and the hot intracluster medium, we can help separate cosmological field galaxy evolution from that driven by environment. I present a selection of recent advancements in this area, with particular emphasis on Hubble Space Telescope wide field imaging, for its superior capability to deliver galaxy morphologies and precise shear maps of distant clusters.

T. Treu

2004-08-05T23:59:59.000Z

437

Taylor Vortices in Wide Spherical Shells  

Science Journals Connector (OSTI)

It was believed that no Taylor vortices would exist in wide spherical shells with an aspect ratio of ?>0.24. In contrast, we have experimentally generated Taylor vortices in a relatively wide spherical shell with ?=0.33 using some special initial conditions. It is found that the Taylor vortices remain very stable in a range of the Reynolds number 467

M. Liu, C. Blohm, C. Egbers, P. Wulf, and H. J. Rath

1996-07-08T23:59:59.000Z

438

Materials - Home  

NLE Websites -- All DOE Office Websites (Extended Search)

* Coatings & Lubricants * Coatings & Lubricants * Nanofluids * Deformation Joining * Recycling * Catalysts * Assessment * Illinois Center for Advanced Tribology Modeling, Simulation & Software Plug-In Hybrid Electric Vehicles PSAT Smart Grid Student Competitions Technology Analysis Transportation Research and Analysis Computing Center Working With Argonne Contact TTRDC Materials ring on liner reciprocating tester Tribology Lab: Ring-on-liner reciprocating tester. Argonne National Laboratory plays an important role in the Department of Energy's (DOE's) efforts to develop advanced materials for transportation. The materials are developed with DOE support from the EERE Office of Vehicle Technology and Office of Hydrogen, Fuel Cells, and Infrastructure Technologies in collaboration with worldwide industrial partners. Examples

439

Cadmium Zinc Oxide Based Optoelectronics Materials and Devices  

E-Print Network (OSTI)

201907. [45] 2010 Optoelectronics Market Report. Databeans,candidate of wide bandgap optoelectronics applications, ZnOZinc Oxide Based Optoelectronics Materials and Devices A

Li, Lin

2011-01-01T23:59:59.000Z

440

Record-Setting Microscopy Illuminates Energy Storage Materials  

NLE Websites -- All DOE Office Websites (Extended Search)

The results yielded important new insights into a material of high interest for electrochemical energy storage. Lithium iron phosphate is widely studied for its use as a...

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Chemical kinetics models for semiconductor processing  

SciTech Connect

Chemical reactions in the gas-phase and on surfaces are important in the deposition and etching of materials for microelectronic applications. A general software framework for describing homogeneous and heterogeneous reaction kinetics utilizing the Chemkin suite of codes is presented. Experimental, theoretical and modeling approaches to developing chemical reaction mechanisms are discussed. A number of TCAD application modules for simulating the chemically reacting flow in deposition and etching reactors have been developed and are also described.

Coltrin, M.E.; Creighton, J.R. [Sandia National Labs., Albuquerque, NM (United States); Meeks, E.; Grcar, J.F.; Houf, W.G. [Sandia National Labs., Livermore, CA (United States); Kee, R.J. [Colorado School of Mines, Golden, CO (United States)

1997-12-31T23:59:59.000Z

442

Thermoelectric energy conversion using nanostructured materials  

E-Print Network (OSTI)

High performance thermoelectric materials in a wide range of temperatures are essential to broaden the application spectrum of thermoelectric devices. This paper presents experiments on the power and efficiency characteristics ...

Chen, Gang

443

Automation, Control and Modeling of Compound Semiconductor Thin-Film Growth  

SciTech Connect

This report documents the results of a laboratory-directed research and development (LDRD) project on control and agile manufacturing in the critical metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) materials growth processes essential to high-speed microelectronics and optoelectronic components. This effort is founded on a modular and configurable process automation system that serves as a backbone allowing integration of process-specific models and sensors. We have developed and integrated MOCVD- and MBE-specific models in this system, and demonstrated the effectiveness of sensor-based feedback control in improving the accuracy and reproducibility of semiconductor heterostructures. In addition, within this framework we have constructed ''virtual reactor'' models for growth processes, with the goal of greatly shortening the epitaxial growth process development cycle.

Breiland, W.G.; Coltrin, M.E.; Drummond, T.J.; Horn, K.M.; Hou, H.Q.; Klem, J.F.; Tsao, J.Y.

1999-02-01T23:59:59.000Z

444

Long- and short-period nanostructure formation on semiconductor surfaces at different ambient conditions  

SciTech Connect

We present the results of studies of nanoripples formation during interaction of the 800 nm, 120, and 35 fs pulses with semiconductor surfaces. Simultaneous appearance of the ripples with the period (700 nm) close to the wavelength of interacting radiation and considerably smaller period (180 nm) was achieved. We discuss the experimental conditions for the formation of these nanoripples (incidence angle, polarization, number of shots, etc.). We show a decisive role of surrounding medium on the quality of nanoripples formation. The self-organization of high-quality nanoripples was clearly shown in the case of dense surrounding medium (methanol), while in the case of insufficient amount of surrounding material (i.e., at different vacuum conditions), the quality of ripples considerably decreased.

Ganeev, R. A. [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Institut national de la recherche scientifique, Centre Energie, Materiaux et Telecommunications, 1650 Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada); Institute of Electronics, Uzbekistan Academy of Sciences, Akademgorodok, 33, Dormon Yoli Street, Tashkent 100125 (Uzbekistan); Baba, M.; Kuroda, H. [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Faculty of Medicine, Saitama Medical University, 38 Hongou, Moro, Moroyama, Iruma, Saitama 350-0495 (Japan); Ozaki, T. [Institut national de la recherche scientifique, Centre Energie, Materiaux et Telecommunications, 1650 Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

2010-05-15T23:59:59.000Z

445

A Fully Integrated Nanosystem of Semiconductor Nanowires for Direct Solar Water Splitting  

SciTech Connect

Artificial photosynthesis, the biomimetic approach to converting sunlight?s energy directly into chemical fuels, aims to imitate nature by using an integrated system of nanostructures, each of which plays a specific role in the sunlight-to-fuel conversion process. Here we describe a fully integrated system of nanoscale photoelectrodes assembled from inorganic nanowires for direct solar water splitting. Similar to the photosynthetic system in a chloroplast, the artificial photosynthetic system comprises two semiconductor light absorbers with large surface area, an interfacial layer for charge transport, and spatially separated cocatalysts to facilitate the water reduction and oxidation. Under simulated sunlight, a 0.12percent solar-to-fuel conversion efficiency is achieved, which is comparable to that of natural photosynthesis. The result demonstrates the possibility of integrating material components into a functional system that mimics the nanoscopic integration in chloroplasts. It also provides a conceptual blueprint of modular design that allows incorporation of newly discovered components for improved performance.

Liu, Chong; Tang, Jinyao; Chen, HaoMing; Liu, Bin; Yang, Peidong

2013-02-21T23:59:59.000Z

446

Ados Co Ltd Dong Yang Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Ados Co Ltd Dong Yang Semiconductor Ados Co Ltd Dong Yang Semiconductor Jump to: navigation, search Name Ados Co Ltd (Dong Yang Semiconductor) Place Seoul, Seoul, Korea (Republic) Product Korean manufacturer of semiconductors; through Ersol's technology, will develop PV plants and begin to roll out crystalline silicon wafers and cells by H2 2007. Coordinates 37.557121°, 126.977379° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.557121,"lon":126.977379,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

447

Semiconductor Components Industries, LLC, 2004 July, 2004 -Rev. 13  

E-Print Network (OSTI)

© Semiconductor Components Industries, LLC, 2004 July, 2004 - Rev. 13 Publication Order Number: LM339/D 1 LM339, LM239, LM2901, LM2901V, NCV2901, MC3302 Single Supply Quad Comparators://onsemi.com TSSOP-14 DTB SUFFIX CASE 948G 1 14 #12;LM339, LM239, LM2901, LM2901V, NCV2901, MC3302 http

Ravikumar, B.

448

Electric-dipole-induced spin resonance in disordered semiconductors  

E-Print Network (OSTI)

ARTICLES Electric-dipole-induced spin resonance in disordered semiconductors MATHIAS DUCKHEIM One of the hallmarks of spintronics is the control of magnetic moments by electric fields enabled in such structures is electric-dipole-induced spin resonance (EDSR), where the radio-frequency fields driving

Loss, Daniel

449

Optical absorption intensity of semiconductor single-wall carbon nanotubes  

E-Print Network (OSTI)

Optical absorption intensity of semiconductor single-wall carbon nanotubes Y. Oyama1 , R. Saito1. The optical absorption intensity is inversely proportional to the diameter in the unit of per carbon atom of single-wall carbon nanotubes (SWNT) synthesized by alcohol CCVD (ACCVD) method and HiPco method [1

Maruyama, Shigeo

450

CHARACTERISATION OF SEMICONDUCTOR OPTICAL AMPLIFIERS FOR ALL-OPTICAL REGENERATION  

E-Print Network (OSTI)

electrical pumping, broad spectral range and opportunities for integration and mass production. Among these components, the semiconductor optical amplifier (SOA) with gain saturation, low optical and electrical power Various SOAs from Alcatel-Thales III-V lab were characterized in the framework of the French project FUTUR

Paris-Sud XI, Université de

451

Electronic displays using optically pumped luminescent semiconductor nanocrystals  

SciTech Connect

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

2014-03-25T23:59:59.000Z

452

Profiling the Thermoelectric Power of Semiconductor Junctions with  

E-Print Network (OSTI)

sources realize energy conversion between heat and electricity without the use of moving me- chanical the thermoelectric power, band struc- tures, and carrier concentrations of semiconductor junctions that constitute S is governed by local carrier statistics, SThEM allows us to profile precise elec- tronic junction locations

453

Hydrogen in compound semiconductors M. D. McCluskeya)  

E-Print Network (OSTI)

Hydrogen in compound semiconductors M. D. McCluskeya) and N. M. Johnson Xerox Palo Alto Research Center, Palo Alto, California 94304 Received 9 October 1998; accepted 18 December 1998 Hydrogen can consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease

McCluskey, Matthew

454

FLUID MECHANICS AND HEAT TRANSFER OF ELECTRON FLOW IN SEMICONDUCTORS  

E-Print Network (OSTI)

= heat, f = LO-mode, g = LO, h = LA-mode, i = negligible, j = remote heat sink 7/ 70 #12;Heat conductionFLUID MECHANICS AND HEAT TRANSFER OF ELECTRON FLOW IN SEMICONDUCTORS Mihir Sen Department · Shallow water analogy · Vorticity dynamics · Linear stability analysis · Numerical simulations of heat

Sen, Mihir

455

Method for altering the luminescence of a semiconductor  

DOE Patents (OSTI)

A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region. 4 figs.

Barbour, J.C.; Dimos, D.B.

1999-01-12T23:59:59.000Z

456

Complex Materials  

SciTech Connect

Valentino Cooper uses some of the world's most powerful computing to understand how materials work at subatomic levels, studying breakthroughs such as piezoelectrics, which convert mechanical stress to electrical energy.

Cooper, Valentino

2014-04-17T23:59:59.000Z

457

Complex Materials  

ScienceCinema (OSTI)

Valentino Cooper uses some of the world's most powerful computing to understand how materials work at subatomic levels, studying breakthroughs such as piezoelectrics, which convert mechanical stress to electrical energy.

Cooper, Valentino

2014-05-23T23:59:59.000Z

458

Mechanistic Studies of Charge Injection from Metallic Electrodes into Organic Semiconductors Mediated by Ionic Functionalities: Final Report  

SciTech Connect

Metal-organic semiconductor interfaces are important because of their ubiquitous role in determining the performance of modern electronics such as organic light emitting diodes (OLEDs), fuel cells, batteries, field effect transistors (FETs), and organic solar cells. Interfaces between metal electrodes required for external wiring to the device and underlying organic structures directly affect the charge carrier injection/collection efficiency in organic-based electronic devices primarily due to the mismatch between energy levels in the metal and organic semiconductor. Environmentally stable and cost-effective electrode materials, such as aluminum and gold typically exhibit high potential barriers for charge carriers injection into organic devices leading to increased operational voltages in OLEDs and FETs and reduced charge extraction in photovoltaic devices. This leads to increased power consumption by the device, reduced overall efficiency, and decreased operational lifetime. These factors represent a significant obstacle for development of next generation of cheap and energy-efficient components based on organic semiconductors. It has been noticed that introduction of organic materials with conjugated backbone and ionic pendant groups known as conjugated poly- and oligoelectrolytes (CPEs and COEs), enables one to reduce the potential barriers at the metal-organic interface and achieve more efficient operation of a device, however exact mechanisms of the phenomenon have not been understood. The goal of this project was to delineate the function of organic semiconductors with ionic groups as electron injection layers. The research incorporated a multidisciplinary approach that encompassed the creation of new materials, novel processing techniques, examination of fundamental electronic properties and the incorporation of the resulting knowledgebase into development of novel organic electronic devices with increased efficiency, environmental stability, and reduced cost. During the execution of the project, main efforts were focused on the synthesis of new charge-bearing organic materials, such as CPEs and COEs, and block copolymers with neutral and ionic segments, studies of mechanisms responsible for the charge injection modulation in devices with ionic interlayers, and use of naturally occurring charged molecules for creation of enhanced devices. The studies allowed PIs to demonstrate the usefulness of the proposed approach for the improvement of operational parameters in model OLED and FET systems resulting in increased efficiency, decreased contact resistance, and possibility to use stable metals for fabrication of device electrodes. The successful proof-of-the-principle results potentially promise development of light-weight, low fabrication cost devices which can be used in consumer applications such as displays, solar cells, and printed electronic devices. Fundamental mechanisms responsible for the phenomena observed have been identified thus advancing the fundamental knowledgebase.

Nguyen, Thuc-Quyen [UCSB; Bazan, Guillermo [UCSB; Mikhailovsky, Alexander [UCSB

2014-04-15T23:59:59.000Z

459

Toward Photochemical Water Splitting Using Band-Gap-Narrowed Semiconductors and Transition-Metal Based Molecular Catalysts  

SciTech Connect

We are carrying out coordinated theoretical and experimental studies of toward photochemical water splitting using band-gap-narrowed semiconductors (BGNSCs) with attached multi-electron molecular water oxidation and hydrogen production catalysts. We focus on the coupling between the materials properties and the H{sub 2}O redox chemistry, with an emphasis on attaining a fundamental understanding of the individual elementary steps in the following four processes: (1) Light-harvesting and charge-separation of stable oxide or oxide-derived semiconductors for solar-driven water splitting, including the discovery and characterization of the behavior of such materials at the aqueous interface; (2) The catalysis of the four-electron water oxidation by dinuclear hydroxo transition-metal complexes with quinonoid ligands, and the rational search for improved catalysts; (3) Transfer of the design principles learned from the elucidation of the DuBois-type hydrogenase model catalysts in acetonitrile to the rational design of two-electron hydrogen production catalysts for aqueous solution; (4) Combining these three elements to examine the function of oxidation catalysts on BGNSC photoanode surfaces and hydrogen production catalysts on cathode surfaces at the aqueous interface to understand the challenges to the efficient coupling of the materials functions.

Muckerman,J.T.; Rodriguez, J.A.; Fujita, E.

2009-06-07T23:59:59.000Z

460

Orc Notation Structured Wide-Area Programming  

E-Print Network (OSTI)

Orc Notation Structured Wide-Area Programming Jayadev Misra Department of Computer Science University of Texas at Austin http://orc.csres.utexas.edu April 12, 2010 Rennes, France #12;Orc Notation hierarchical structure. #12;Orc Notation Orc · Goal: Internet scripting language. · Next: Component integration

Misra, Jayadev

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Structured Wide-Area Programming: Orc Calculus  

E-Print Network (OSTI)

Structured Wide-Area Programming: Orc Calculus Jayadev Misra Department of Computer Science University of Texas at Austin http://orc.csres.utexas.edu #12;Concurrency · ubiquitous. · difficult interactions. · Support hierarchical structure. #12;Orc · Initial Goal: Internet scripting language. · Next

Misra, Jayadev

462

Utilization of the world wide web  

Science Journals Connector (OSTI)

Two aspects of utilization of the World Wide Web are examined: (i) the communication of technical data through web cites that provide repositories of atomic and molecular data accessible through searchable databases; and (ii) the communication about issues of mutual concern among data producers data compilers and evaluators and data users.

Peter Mohr; Gary Mallard; Uri Ralchenko; David Schultz

1998-01-01T23:59:59.000Z

463

Product Design in Enterprise Wide Optimization  

E-Print Network (OSTI)

Product Design in Enterprise Wide Optimization Paul Arch, Michel Berghmans, Hany Farag NOVA · Simulation tools ­ Polymers/Plus ­ process modeling ­ Predici ­ reactor modeling ­ Gap analysis of commercial + M Dn + P1 Termination by combination Pn + Pm Dn+m Reactor model modified to resemble additional

Grossmann, Ignacio E.

464

Materializing Energy  

E-Print Network (OSTI)

Motivated and informed by perspectives on sustainability and design, this paper draws on a diverse body of scholarly works related to energy and materiality to articulate a perspective on energy-as-materiality and propose a design approach of materializing energy. Three critical themes are presented: the intangibility of energy, the undifferentiatedness of energy, and the availability of energy. Each theme is developed through combination of critical investigation and design exploration, including the development and deployment of several novel design artifacts: Energy Mementos and The Local Energy Lamp. A framework for interacting with energy-as-materiality is proposed involving collecting, keeping, sharing, and activating energy. A number of additional concepts are also introduced, such as energy attachment, energy engagement, energy attunement, local energy and energy meta-data. Our work contributes both a broader, more integrative design perspective on energy and materiality as well as a diversity of more specific concepts and artifacts that may be of service to designers and researchers of interactive systems concerned with sustainability and energy. Author Keywords Sustainability, energy, materiality, design, design theory

James Pierce; Eric Paulos

465

Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same  

SciTech Connect

A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.

Tansu, Nelson; Gilchrist, James F; Ee, Yik-Khoon; Kumnorkaew, Pisist

2013-11-19T23:59:59.000Z

466

Fracture of brittle multiphase materials by high energy water jets  

Science Journals Connector (OSTI)

High energy water jets are established in processing brittle, inhomogeneous materials like rocks and concrete. Despite their wide ... of application, the failure mechanisms of these materials, especially the infl...

A. Momber; R. Kovacevic

1996-02-15T23:59:59.000Z

467

Experimental Study of Plasma Materials' Interaction in Plasma Focus “Dena”  

Science Journals Connector (OSTI)

It is widely recognized that plasma material interaction in fusion devices is a critical issue that affects the overall machine performance. The process of material selection with a low degradation effect on the ...

M. V. Roshan; M. Mahmoodi Darian

2003-03-01T23:59:59.000Z

468

Fabrication of Semiconductors by Wet Chemical Etch  

E-Print Network (OSTI)

Arsenide. New York: John Wiley & Sons, Inc, 1994. CONCLUSIONS AND FUTURE WORK A selective wet etch process to re- move GaAs epitaxial cap layers from underlying InGaP layers has been de- veloped using a solution of H2SO4: H2O2:deionized water at a rate... the computing and electronics industries. Semiconducting materials, such as silicon, germanium, gallium ar- senide, and indium phosphide, are neither good insulators nor good con- ductors, but they have intrinsic electri- cal properties so that by controlled...

Francoviglia, Laura

2008-07-01T23:59:59.000Z

469

Structural Transformations in self-assembled Semiconductor Quantum Dots as inferred by Transmission Electron Microscopy  

E-Print Network (OSTI)

electronic and optoelectronic devices.1-3 ZnO is a promising material for UV optoelectronics due to its of the results have been widely reproduced or resulted in stable optoelectronic devices. p-type ZnO NWs have also

Moeck, Peter

470

Scalable Routes to Efficient Thermoelectric Materials  

E-Print Network (OSTI)

technique in fundamental studies of electronic structure andfundamental properties of a semiconductor such as the electronic

Feser, Joseph Patrick

2010-01-01T23:59:59.000Z

471

NETL: Onsite Research: Materials Science  

NLE Websites -- All DOE Office Websites (Extended Search)

Metallography Metallography NETL has a state-of-the art metallographic facility staffed with world renowned experts with experience on a wide range of alloys and materials with the tools to get the job done. Our metallography staff works with their customers to reveal the microstructure contained within the specimens using sophisticated polishing, staining, and microscopic techniques to develop new techniques and improve upon old ones. An understanding of the microstructure is a useful tool in a wide range of situations from developing processing techniques on new material to evaluating the performance of new and existing materials after exposure to aggressive conditions. The information our staff obtains is an invaluable part of a research program. For example:

472

Wide-range plutonium isotopic analysis with CDTE detector  

SciTech Connect

Nondestructive analysis (NDA) techniques applied to bulk nuclear materials (NM) are important for nuclear safeguards and material control because of timeliness, cost-effectiveness and containment integrity. The common NDA techniques, calorimetry and neutron coincidence counting, require knowledge of the isotopic composition of the material quantitative interpretation of these measurements. Gamma-ray spectroscopy with high-resolution detectors is a well-developed NDA technique for isotopics. The use of intrinsic germanium detectors cooled to cryogenic temperatures for isotopic measurements is sometimes difficult or even impossible because of severe access limitations with the sensitive, heavy detectors. Highly portable isotopics measurements are needed for in-situ verification of bulk NM quantities or, in many cases, for measurements of holdup quantities. This paper summarizes the gamma-ray measurements with a new, portable CdTe detector. It also presents the detailed results of the wide-range isotopic analysis of plutonium with FRAM v4, the first results of this kind for a non-cryogenic detector.

Vo, Duc T.; Russo, P. A. (Phyllis A.)

2001-01-01T23:59:59.000Z

473

Nuclear materials management storage study  

SciTech Connect

The Office of Weapons and Materials Planning (DP-27) requested the Planning Support Group (PSG) at the Savannah River Site to help coordinate a Departmental complex-wide nuclear materials storage study. This study will support the development of management strategies and plans until Defense Programs` Complex 21 is operational by DOE organizations that have direct interest/concerns about or responsibilities for nuclear material storage. They include the Materials Planning Division (DP-273) of DP-27, the Office of the Deputy Assistant Secretary for Facilities (DP-60), the Office of Weapons Complex Reconfiguration (DP-40), and other program areas, including Environmental Restoration and Waste Management (EM). To facilitate data collection, a questionnaire was developed and issued to nuclear materials custodian sites soliciting information on nuclear materials characteristics, storage plans, issues, etc. Sites were asked to functionally group materials identified in DOE Order 5660.1A (Management of Nuclear Materials) based on common physical and chemical characteristics and common material management strategies and to relate these groupings to Nuclear Materials Management Safeguards and Security (NMMSS) records. A database was constructed using 843 storage records from 70 responding sites. The database and an initial report summarizing storage issues were issued to participating Field Offices and DP-27 for comment. This report presents the background for the Storage Study and an initial, unclassified summary of storage issues and concerns identified by the sites.

Becker, G.W. Jr.

1994-02-01T23:59:59.000Z

474

DFAS Wide-Area Workflow Issues  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DFAS Wide-Area Workflow DFAS Wide-Area Workflow Issues Mark Shvartzman Sr. Project Manager, CEM, CEA Southern California Edison Presented at the Spring FUPWG Meeting April 20, 2011 What We Are Going to Discuss * Review Delivery Order or Task Order for accounting lines information. * Contact Contracting Officer or Contracting specialist and request Pay DoDAAC and Ext. information * Create Payment Log by ACRN * Start creating Invoice How the WAWF works and how to navigate through: 2 CONTRACT N68711-03-G-4019 DO#0028 Pay Records Bill by CLIN Award $ by CLIN Billed To Date Invoice number Pay Total Balance by CLIN 7500009733 $330,899.11 CLIN 0001AA 674,220.00 674,220.00 7500009733 7500012596 674,220.00 0.00 7500012596 $641,344.69 CLIN 0001AB 325,780.00 298023.8 27,756.20 7500012596 7500015079 325,780.00

475

Ordered porous mesostructured materials from nanoparticle-block copolymer self-assembly  

DOE Patents (OSTI)

The invention provides mesostructured materials and methods of preparing mesostructured materials including metal-rich mesostructured nanoparticle-block copolymer hybrids, porous metal-nonmetal nanocomposite mesostructures, and ordered metal mesostructures with uniform pores. The nanoparticles can be metal, metal alloy, metal mixture, intermetallic, metal-carbon, metal-ceramic, semiconductor-carbon, semiconductor-ceramic, insulator-carbon or insulator-ceramic nanoparticles, or combinations thereof. A block copolymer/ligand-stabilized nanoparticle solution is cast, resulting in the formation of a metal-rich (or semiconductor-rich or insulator-rich) mesostructured nanoparticle-block copolymer hybrid. The hybrid is heated to an elevated temperature, resulting in the formation of an ordered porous nanocomposite mesostructure. A nonmetal component (e.g., carbon or ceramic) is then removed to produce an ordered mesostructure with ordered and large uniform pores.

Warren, Scott; Wiesner, Ulrich; DiSalvo, Jr., Francis J

2013-10-29T23:59:59.000Z

476

Old Electrochromic Materials  

NLE Websites -- All DOE Office Websites (Extended Search)

Electrochromic Materials Electrochromic Materials DOE also supports the development of electrochromic coatings through several mechanisms. Three companies are engaged in development of commercial prototypes through the Electrochromics Initiative and an SBIR small business grant. LBNL and another DOE laboratory, the National Renewable Energy Laboratory (NREL) perform a variety of measurements to evaluate the energy performance and durability of these prototypes . Other research activities are intended to assist the efforts of the industry in general. At LBNL, research focuses on rapid development and analysis of electrode materials. Among recent accomplishments was the production of a stoichiometric form of Li0.5Ni0.5O by laser deposition and sputtering with excellent electrochromic properties. Dr. Stuart Cogan of EIC Laboratories tested the films and declared them to have "the highest coloration efficiency of any known anodic electrochromic material." EIC will test the films in their own devices in the near future. We also work on several binary electrodes produced by cosputtering from two targets simultaneously. For example, enhanced forms of tungsten oxide produced in this way have wide application because of the prevalence of tungsten oxide in today's devices. In addition to testing durability, NREL also investigates the degradation mechanisms which lead to failure in the hope of being able to correlate accelerated testing to real time failure as well as to diagnose and correct device problems.

477

Materials Highlights | Neutron Science | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Materials SHARE Materials Highlights 1-7 of 7 Results Neutron scattering characterizes dynamics in polymer family December 01, 2012 - Understanding the interplay between structure and dynamics is the key to obtaining tailor-made materials. In the last few years, a large effort has been devoted to characterizing and relating the structure and dynamic properties in families of polymers with alkyl side groups. Theory meets experiment: structure-property relationships in an electrode material for solid-oxide fuel cells December 01, 2012 - Fuel cell technology is one potentially very efficient and environmentally friendly way to convert the chemical energy of fuels into electricity. Solid-oxide fuel cells (SOFCs) can convert a wide variety of fuels with simpler, cheaper designs than those used in

478

Statistical Methods for Enhanced Metrology in Semiconductor/Photovoltaic Manufacturing  

E-Print Network (OSTI)

for contact resistance and material body resistance, and isfrom contact resistance and from material resistancethe cell material can absorb sunlight. Parasitic resistance

Zeng, Dekong

2012-01-01T23:59:59.000Z

479

Method and apparatus for determining minority carrier diffusion length in semiconductors  

DOE Patents (OSTI)

Method and apparatus are provided for determining the diffusion length of minority carriers in semiconductor material, particularly amorphous silicon which has a significantly small minority carrier diffusion length using the constant magnitude surface-photovoltage (SPV) method. Steady or modulated illumination at several wavelengths provides the light excitation on the surface of the material to generate the SPV. A manually controlled or automatic servo system maintains a constant predetermined value of the SPV for each wavelength. A drop of a transparent electrolyte solution containing redox couples (preferably quinhydrone) having an oxidation-reduction potential (E) in the order of +0.6 to -1.65 volts couples the SPV to a measurement system. The drop of redox couple solution functions to create a liquid Schottky barrier at the surface of the material. Illumination light is passed through a transparent rod supported over the surface and through the drop of transparent electrolyte. The drop is held in the gap between the rod and the surface. Steady red light is also used as an optical bias to reduce deleterious space-charge effects that occur in amorphous silicon.

Moore, Arnold R. (Princeton, NJ)

1984-01-01T23:59:59.000Z

480

Multiband semiconductor compositions for photovoltaic devices  

DOE Patents (OSTI)

The highly mismatched alloy Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x, 0.ltoreq.y<1 and 0material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Walukiewicz, Wladyslaw (Kensington, CA); Yu, Kin Man (Lafayette, CA); Wu, Junqiao (Belmont, MA)

2012-03-06T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor wide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Visible light surface emitting semiconductor laser  

DOE Patents (OSTI)

A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

Olbright, Gregory R. (Boulder, CO); Jewell, Jack L. (Bridgewater, NJ)

1993-01-01T23:59:59.000Z

482

A study of the combined influence of temperature and material defects on semiconductor device performance  

E-Print Network (OSTI)

-charge distribution. ~ 50 ix LIST OF SYMBOLS ev Electron-Volt Centimeter E c E E t E E v 0 ~ 0 n' p Conduction Band Edge (ev) Intrinsic Level (ev) Depth of Trapping Level from the Lower Edge of the Conduction Band (ev) Fermi Level (ev) Valance Band... for temperature above 390'K because in this temperature region the Fermi-level shifts close to the trap level and eventually the lifetime would depend on the ratio of available carriers to the trap centers. For Class III diodes the lifetime seems to decrease...

Patel, Kanaiyalal Chaturbhai

2012-06-07T23:59:59.000Z

483

Materials Handbook  

Science Journals Connector (OSTI)

... THE sub title of this handbook gives the clue to the mode of treatment of the subject matter, and so ... seventeen to 'alkalis'; in fact, a better title for the book would be "Handbook of Engineering Materials". British trade names are conspicuously few, but no doubt a ...

E. H. TRIPP

1942-08-15T23:59:59.000Z

484

Operation and performance of the ATLAS semiconductor tracker  

E-Print Network (OSTI)

The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.

Aad, Georges; Abdallah, Jalal; Abdel Khalek, Samah; Abdinov, Ovsat; Aben, Rosemarie; Abi, Babak; Abolins, Maris; AbouZeid, Ossama; Abramowicz, Halina; Abreu, Henso; Abreu, Ricardo; Abulaiti, Yiming; Acharya, Bobby Samir; Adamczyk, Leszek; Adams, David; Adelman, Jahred; Adomeit, Stefanie; Adye, Tim; Agatonovic-Jovin, Tatjana; Aguilar-Saavedra, Juan Antonio; Agustoni, Marco; Ahlen, Steven; Ahmad, Ashfaq; Ahmadov, Faig; Aielli, Giulio; Åkesson, Torsten Paul Ake; Akimoto, Ginga; Akimov, Andrei; Alberghi, Gian Luigi; Albert, Justin; Albrand, Solveig; Alconada Verzini, Maria Josefina; Aleksa, Martin; Aleksandrov, Igor; Alexa, Calin; Alexander, Gideon; Alexandre, Gauthier; Alexopoulos, Theodoros; Alhroob, Muhammad; Alimonti, Gianluca; Alio, Lion; Alison, John; Allbrooke, Benedict; Allison, Lee John; Allport, Phillip; Allwood-Spiers, Sarah; Almond, John; Aloisio, Alberto; Alonso, Alejandro; Alonso, Francisco; Alpigiani, Cristiano; Altheimer, Andrew David; Alvarez Gonzalez, Barbara; Alviggi, Mariagrazia; Amako, Katsuya; Amaral Coutinho, Yara; Amelung, Christoph; Amidei, Dante; Amor Dos Santos, Susana Patricia; Amorim, Antonio; Amoroso, Simone; Amram, Nir; Amundsen, Glenn; Anastopoulos, Christos; Ancu, Lucian Stefan; Andari, Nansi; Andeen, Timothy; Anders, Christoph Falk; Anders, Gabriel; Anderson, Kelby; Andreazza, Attilio; Andrei, George Victor; Anduaga, Xabier; Angelidakis, Stylianos; Angelozzi, Ivan; Anger, Philipp; Angerami, Aaron; Anghinolfi, Francis; Anisenkov, Alexey; Anjos, Nuno; Annovi, Alberto; Antonaki, Ariadni; Antonelli, Mario; Antonov, Alexey; Antos, Jaroslav; Anulli, Fabio; Aoki, Masato; Aperio Bella, Ludovica; Apolle, Rudi; Arabidze, Giorgi; Aracena, Ignacio; Arai, Yasuo; Araque, Juan Pedro; Arce, Ayana; Arguin, Jean-Francois; Argyropoulos, Spyridon; Arik, Metin; Armbruster, Aaron James; Arnaez, Olivier; Arnal, Vanessa; Arnold, Hannah; Arslan, Ozan; Artamonov, Andrei; Artoni, Giacomo; Asai, Shoji; Asbah, Nedaa; Ashkenazi, Adi; Ask, Stefan; Åsman, Barbro; Asquith, Lily; Assamagan, Ketevi; Astalos, Robert; Atkinson, Markus; Atlay, Naim Bora; Auerbach, Benjamin; Augsten, Kamil; Aurousseau, Mathieu; Avolio, Giuseppe; Azuelos, Georges; Azuma, Yuya; Baak, Max; Bacci, Cesare; Bachacou, Henri; Bachas, Konstantinos; Backes, Moritz; Backhaus, Malte; Backus Mayes, John; Badescu, Elisabeta; Bagiacchi, Paolo; Bagnaia, Paolo; Bai, Yu; Bain, Travis; Baines, John; Baker, Oliver Keith; Baker, Sarah; Balek, Petr; Balli, Fabrice; Banas, Elzbieta; Banerjee, Swagato; Banfi, Danilo; Bangert, Andrea Michelle; Bannoura, Arwa A E; Bansal, Vikas; Bansil, Hardeep Singh; Barak, Liron; Baranov, Sergei; Barberio, Elisabetta Luigia; Barberis, Dario; Barbero, Marlon; Barillari, Teresa; Barisonzi, Marcello; Barklow, Timothy; Barlow, Nick; Barnett, Bruce; Barnett, Michael; Barnovska, Zuzana; Baroncelli, Antonio; Barone, Gaetano; Barr, Alan; Barreiro, Fernando; Barreiro Guimarães da Costa, João; Bartoldus, Rainer; Barton, Adam Edward; Bartos, Pavol; Bartsch, Valeria; Bassalat, Ahmed; Basye, Austin; Bates, Richard; Batkova, Lucia; Batley, Richard; Battistin, Michele; Bauer, Florian; Bawa, Harinder Singh; Beau, Tristan; Beauchemin, Pierre-Hugues; Beccherle, Roberto; Bechtle, Philip; Beck, Hans Peter; Becker, Anne Kathrin; Becker, Sebastian; Beckingham, Matthew; Becot, Cyril; Beddall, Andrew; Beddall, Ayda; Bedikian, Sourpouhi; Bednyakov, Vadim; Bee, Christopher; Beemster, Lars; Beermann, Thomas; Begel, Michael; Behr, Katharina; Belanger-Champagne, Camille; Bell, Paul; Bell, William; Bella, Gideon; Bellagamba, Lorenzo; Bellerive, Alain; Bellomo, Massimiliano; Belloni, Alberto; Belotskiy, Konstantin; Beltramello, Olga; Benary, Odette; Benchekroun, Driss; Bendtz, Katarina; Benekos, Nektarios; Benhammou, Yan; Benhar Noccioli, Eleonora; Benitez Garcia, Jorge-Armando; Benjamin, Douglas; Bensinger, James; Benslama, Kamal; Bentvelsen, Stan; Berge, David; Bergeaas Kuutmann, Elin; Berger, Nicolas; Berghaus, Frank; Berglund, Elina; Beringer, Jürg; Bernabéu, José; Bernard, Clare; Bernat, Pauline; Bernius, Catrin; Bernlochner, Florian Urs; Berry, Tracey; Berta, Peter; Bertella, Claudia; Bertolucci, Federico; Besana, Maria Ilaria; Besjes, Geert-Jan; Bessidskaia, Olga; Besson, Nathalie; Betancourt, Christopher; Bethke, Siegfried; Bhimji, Wahid; Bianchi, Riccardo-Maria; Bianchini, Louis; Bianco, Michele; Biebel, Otmar; Bieniek, Stephen Paul; Bierwagen, Katharina; Biesiada, Jed; Biglietti, Michela; Bilbao De Mendizabal, Javier; Bilokon, Halina; Bindi, Marcello; Binet, Sebastien; Bingul, Ahmet; Bini, Cesare; Black, Curtis; Black, James; Black, Kevin

2014-01-01T23:59:59.000Z

485

Operation and performance of the ATLAS semiconductor tracker  

E-Print Network (OSTI)

The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.

ATLAS Collaboration

2014-04-29T23:59:59.000Z

486

Semiconductor laser devices having lateral refractive index tailoring  

DOE Patents (OSTI)

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Ashby, Carol I. H. (Edgewood, NM); Hadley, G. Ronald (Alburquerque, NM); Hohimer, John P. (Albuquerque, NM); Owyoung, Adelbert (Albuquerque, NM)

1990-01-01T23:59:59.000Z

487

Semiconductor Nanocrystals-Based White Light Emitting Diodes  

SciTech Connect

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

Dai, Quanqin [ORNL; Hu, Michael Z. [ORNL; Duty, Chad E [ORNL

2010-01-01T23:59:59.000Z

488

Semiconductor-Nanocrystals-Based White Light-Emitting Diodes  

SciTech Connect

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

Dai, Quanqin [ORNL; Duty, Chad E [ORNL; Hu, Michael Z. [ORNL

2010-01-01T23:59:59.000Z

489

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System  

SciTech Connect

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.

Abernathy, C.R.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

1998-11-04T23:59:59.000Z

490

Contacts Between Metals and Between a Metal and a Semiconductor  

Science Journals Connector (OSTI)

The problem of contacts between metals and between a metal and a semiconductor is treated classically with the help of the results of wave mechanical theory of electron energy states in solids. The potential and electron density distributions in the two bodies near the contact are discussed. The bodies are assumed to be in immediate contact. The problem of a body in vacuum and the problem of two bodies separated by a gap are discussed qualitatively.

H. Y. Fan

1942-10-01T23:59:59.000Z

491

Geological problems in radioactive waste isolation - A world wide review  

SciTech Connect

The problem of isolating radioactive wastes from the biosphere presents specialists in the earth sciences with some of the most complicated problems they have ever encountered. This is especially true for high-level waste (HLW), which must be isolated in the underground and away from the biosphere for thousands of years. The most widely accepted method of doing this is to seal the radioactive materials in metal canisters that are enclosed by a protective sheath and placed underground in a repository that has been carefully constructed in an appropriate rock formation. Much new technology is being developed to solve the problems that have been raised, and there is a continuing need to publish the results of new developments for the benefit of all concerned. Table 1 presents a summary of the various formations under investigation according to the reports submitted for this world wide review. It can be seen that in those countries that are searching for repository sites, granitic and metamorphic rocks are the prevalent rock type under investigation. Six countries have developed underground research facilities that are currently in use. All of these investigations are in saturated systems below the water table, except the United States project, which is in the unsaturated zone of a fractured tuff.

Witherspoon, P.A. [Lawrence Berkeley Lab., CA (United States)

1991-06-01T23:59:59.000Z

492

Discontinuous Buckling of Wide Beams and Metabeams  

E-Print Network (OSTI)

We uncover how nonlinearities dramatically influence the buckling of elastic beams by means of experiments, simulations and theory. We show that sufficiently wide, ordinary elastic beams exhibit discontinuous buckling, an unstable form of buckling where the post-buckling stiffness is negative. We develop a 1D model that matches our data and identify nonlinearity as the main cause for negative stiffness. Finally, we create nonlinear metamaterials that allow us to rationally design the (negative) post-buckling stiffness of metabeams, independently of beam thickness, and demonstrate discontinuous buckling for metabeams as slender as 1% numerically and 5% experimentally.

Corentin Coulais; Johannes T. B. Overvelde; Luuk A. Lubbers; Katia Bertoldi; Martin van Hecke

2014-10-22T23:59:59.000Z

493

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Electronic Structure and Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Wednesday, 29 November 2006 00:00 The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

494

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

495

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

496

Functional Materials for Energy | Advanced Materials | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

Thermoelectrics Separations Materials Catalysis Sensor Materials Polymers and Composites Carbon Fiber Related Research Chemistry and Physics at Interfaces Materials Synthesis from...

497

Annual Report 2010 Page 1 PHYSICS AND MATERIALS SCIENCE RESEARCH UNIT (PHYMS)  

E-Print Network (OSTI)

chalcopyrites and kesterites, aiming at low cost and high efficiency. Fundamental semiconductor physicsMS comprises: Physics of Advanced Materials LPM, Soft Condensed Matter Physics TSCM and Photovoltaics LPV. Its of nanomagnets. TSCM, the group for Theory of Soft Condensed Matter, was built up in 2010. The topic of research

van der Torre, Leon

498

Lightweight concrete : investigations into the production of variable density cellular materials  

E-Print Network (OSTI)

This research focuses on the intersection between material composition and form in the development of a new type of concrete. As concrete is the most widely used building material in the world, innovation in this material ...

Cooke, Timothy Graham

2012-01-01T23:59:59.000Z

499

EA-1422: Final Site-wide Environmental Assessment | Department...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2: Final Site-wide Environmental Assessment EA-1422: Final Site-wide Environmental Assessment Sandia National Laboratories Sandia National Laboratories (SNL) is one of three...

500

Commonwealth Aluminum: Manufacturer Conducts Plant-Wide Energy...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Commonwealth Aluminum: Manufacturer Conducts Plant-Wide Energy Assessments at Two Aluminum Sheet Production Operations Commonwealth Aluminum: Manufacturer Conducts Plant-Wide...