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Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Seebeck coefficient in organic semiconductors  

E-Print Network (OSTI)

Seebeck coefficient in organic semiconductors A dissertation submitted for the degree of Doctor of Philosophy Deepak Venkateshvaran Fitzwilliam College & Optoelectronics Group, Cavendish Laboratory University of Cambridge February 2014 “The end...

Venkateshvaran, Deepak

2014-07-01T23:59:59.000Z

2

MST: Organizations: Organic Materials  

NLE Websites -- All DOE Office Websites (Extended Search)

Adhesive Bonding Adhesive Bonding Composites Encapsulation Materials Characterization Mechanical Testing Molding, Thermoforming, & Compounding Organizations Organic Materials Composite-to-metal adhesive bond Experimental/analytical study of composit-to-metal adhesive bond. The Organic Materials department in the Advanced Manufacturing and Processing Laboratory provides innovative prototype fabrication, full service small lot production, materials technology, processing expertise, and a broad range of organic material characterization and mechanical testing techniques. We encapsulate, we join and bond, we foam, we analyze and image, we build composite structures. We strive to make you, our customers, successful! We partner with you to find the right combination of materials, processing, and fixturing that will result in the highest value

3

Charge-carrier transport in amorphous organic semiconductors  

E-Print Network (OSTI)

Since the first reports of efficient luminescence and absorption in organic semiconductors, organic light-emitting devices (OLEDs) and photovoltaics (OPVs) have attracted increasing interest. Organic semiconductors have ...

Limketkai, Benjie, 1982-

2008-01-01T23:59:59.000Z

4

The synthesis of inorganic semiconductor nanocrystalline materials for the purpose of creating hybrid organic/inorganic light-emitting devices  

E-Print Network (OSTI)

Colloidal semiconductor nanocrystals (NCs) or quantum dots (QDs) can be synthesized to efficiently emit light from the ultraviolet, across the entire visible spectrum, and into the near infrared. This is now possible due ...

Steckel, Jonathan S. (Jonathan Stephen)

2006-01-01T23:59:59.000Z

5

Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material  

DOE Patents (OSTI)

Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

Sopori, Bhushan; Rangappan, Anikara

2014-11-25T23:59:59.000Z

6

Toward a Unified Treatment of Electronic Processes in Organic Semiconductors  

SciTech Connect

A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: (1) the equilibrium free carrier density, nf, is a small fraction of the total charge density; (2) a superlinear increase in conductivity with doping density is universal; (3) nf increases with applied electric field; and (4) the carrier mobility is field-dependent regardless of crystallinity.

Gregg. B.A.

2005-01-01T23:59:59.000Z

7

Organic Semiconductor Chemistry | MIT-Harvard Center for Excitonics  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic Semiconductor Chemistry December 13, 2012 at 3pm36-428 Seth Marder Department of ChemistryBiochemistry, Director, Center for Organic Photonics and Electronics, Georgia...

8

Semiconductor Equipment and Materials International SEMI | Open Energy  

Open Energy Info (EERE)

Semiconductor Equipment and Materials International SEMI Semiconductor Equipment and Materials International SEMI Jump to: navigation, search Name Semiconductor Equipment and Materials International (SEMI) Place San Jose, California Zip 95134 2127 Product Global trade association, publisher and conference organiser representing the semiconductor and flat panel display equipment manufacturers. References Semiconductor Equipment and Materials International (SEMI)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor Equipment and Materials International (SEMI) is a company located in San Jose, California . References ↑ "Semiconductor Equipment and Materials International (SEMI)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_Equipment_and_Materials_International_SEMI&oldid=350739

9

Physics and simulation of transport processes in hybrid organic semiconductor devices  

E-Print Network (OSTI)

Organic semiconductors and nanomaterials promise to potentially form the basis for future efficient and cost-effective large area optoelectronic devices, such as lightemitting diodes and solar cells. Although these materials' ...

Rousseau, Ian Michael

2010-01-01T23:59:59.000Z

10

Semiconductor and Materials Company Inc SAMCO | Open Energy Information  

Open Energy Info (EERE)

and Materials Company Inc SAMCO and Materials Company Inc SAMCO Jump to: navigation, search Name Semiconductor and Materials Company Inc (SAMCO) Place Kyoto, Kyoto, Japan Zip 612-8443 Sector Solar Product Japanese manufactruer of semiconductor and solar manufacturing equipment such as etching, deposition and cleaning systems. References Semiconductor and Materials Company Inc (SAMCO)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor and Materials Company Inc (SAMCO) is a company located in Kyoto, Kyoto, Japan . References ↑ "Semiconductor and Materials Company Inc (SAMCO)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_and_Materials_Company_Inc_SAMCO&oldid=350738

11

Organic Semiconductors for Low—Cost Solar Cells  

Science Journals Connector (OSTI)

The current cost of solar electricity derived from silicon photovoltaics is about 30 to 40 cents per kilowatt—hour. This cost is similar to peak—power charges in California during the height of summer thus establishing a partial path to economic viability. However this competitiveness is not viable in other seasons and many other locations. This paper will discuss the basic theory and progress of a new class of photovoltaic semiconductors derived from organic polymer materials. These materials have obtained promising results with 5% conversion efficiency. In addition these materials can be manufactured relatively easily by using printing technologies and roll?to?roll coating machines similar to those used to make photographic film or newspapers. Solar cells made this way would not only be cheaper but could also be incorporated into roofing materials to reduce installation costs. Organic semiconductors can be dissolved in common solvents and sprayed or printed onto substrates so they are very promising candidates for the solar production of electricity.

Michael D. McGehee; Chiatzun Goh

2008-01-01T23:59:59.000Z

12

Neutron detection using boron gallium nitride semiconductor material  

SciTech Connect

In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

2014-03-01T23:59:59.000Z

13

Method for depositing high-quality microcrystalline semiconductor materials  

DOE Patents (OSTI)

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Guha, Subhendu (Bloomfield Hills, MI); Yang, Chi C. (Troy, MI); Yan, Baojie (Rochester Hills, MI)

2011-03-08T23:59:59.000Z

14

Semiconductor Aspects of Organic Bulk Heterojunction Solar Cells  

Science Journals Connector (OSTI)

During the last few years organic solar cells have been discussed as a promising alternative to inorganic semiconductors for renewable energy production. These organic photovoltaic devices offer the possibility o...

Christoph J. Brabec

2003-01-01T23:59:59.000Z

15

Dynamics of excitons and charges in organic materials and semiconducto...  

NLE Websites -- All DOE Office Websites (Extended Search)

of excitons and charges in organic materials and semiconductor nanocrystals for optoelectronics December 5, 2014 at 3pmRLE Haus 36-428 Laurens D.A. Siebbeles Department of...

16

Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors  

SciTech Connect

The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of charge carriers is known to evolve as the carrier concentration increases, due to the presence of intrinsic disorder in organic semiconductors. Thus, a complementary question is: how does the nature of charge transport change as a function of carrier concentration?

Zhu, Xiaoyang

2014-12-10T23:59:59.000Z

17

Organic conductive films for semiconductor electrodes  

DOE Patents (OSTI)

According to the present invention, improved electrodes overcoated with conductive polymer films and preselected catalysts are provided. The electrodes typically comprise an inorganic semiconductor over-coated with a charge conductive polymer film comprising a charge conductive polymer in or on which is a catalyst or charge-relaying agent.

Frank, A.J.

1984-01-01T23:59:59.000Z

18

Transition metal oxides on organic semiconductors Yongbiao Zhao a  

E-Print Network (OSTI)

semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including toward in simplifying the fabrication process of the organic optoelectronic devices. Ã? 2014 Elsevier B], have gained great attention because of their wide applications in optoelectronic devices composed

Demir, Hilmi Volkan

19

Organic semiconductors for the new millennium  

Science Journals Connector (OSTI)

...millennium 181 active material indiumtin oxide...electrode, or cathode, since the...func- tion materials are better...electron-injectors (cathodes), whereas high work function materials, such as ITO...non-phosphorescent active materials the...

2000-01-01T23:59:59.000Z

20

Organic semiconductors for the new millennium  

Science Journals Connector (OSTI)

...allows driving of organic LEDs in `smart...of the lower production cost. By exploiting...and other `all organic' logics have...Photovoltaic cells Another area of applications of organics is in the fabrication of solar cells and pho- todetectors...

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

First-principles simulations of exciton diffusion in organic semiconductors  

Science Journals Connector (OSTI)

Exciton diffusion is crucial for the performance of organic semiconductors in photovoltaic and solid state lighting applications. We propose a first-principles approach that can predict exciton dynamics in organic semiconductors. The method is based on time-dependent density functional theory to describe the energy and many-body wave functions of excitons. Nonadiabatic ab initio molecular dynamics is used to calculate phonon-assisted transition rates between localized exciton states. Using Monte Carlo simulations, we determine the exciton diffusion length, lifetime, diffusivity, and harvesting efficiency in poly(3-hexylthiophene) polymers at different temperatures, which agree very well with the experiments. We find that exciton diffusion is primarily determined by the density of states of low-energy excitons. A widely speculated diffusion mechanism, namely an initial downhill migration followed by thermally activated migration, is confirmed and elucidated by the simulations. Some general guidelines for designing more efficient organic solar cells are obtained from the simulations.

Xu Zhang; Zi Li; Gang Lu

2011-12-22T23:59:59.000Z

22

Semiconductor electronics: Organic crystals at large  

Science Journals Connector (OSTI)

... In the future, substrates might also include flexible and less brittle materials such as plastic foils. One particular improvement involves recrystallizing the amorphous film into a polycrystalline film consisting of ... difficult to scale the process up to an industrial level for substrates such as plastic foil that cannot withstand elevated temperatures. ...

Paul Heremans

2006-12-13T23:59:59.000Z

23

Recent progress in transparent oxide semiconductors: Materials and device application  

Science Journals Connector (OSTI)

This paper reviews our recent research progress on new transparent conductive oxide (TCO) materials and electronic and optoelectronic devices based on these materials. First, described are the materials including p-type materials, deep-UV transparent TCO(?-Ga2O3), epitaxially grown ITO with atomically flat surface, transparent electrochromic oxide (NbO2F), amorphous TCOs, and nanoporous semiconductor 12CaO · 7Al2O3. Second, presented are TCO-based electronic/optoelectronic devices realized to date, UV/blue LED and UV-sensors based on transparent pn junction and high performance transparent TFT using n-type TCO as an n-channel. Finally, unique optoelectronic properties (p-type degenerate conduction, transfer doping of carriers, RT-stable exciton, and large optical nonlinearity) originating from 2D-electronic nature in p-type layered oxychalcogenides are summarized along with the fabrication method of epitaxial thin films of these materials.

Hideo Hosono

2007-01-01T23:59:59.000Z

24

Physical properties and design of light-emitting devices based on organic materials and nanoparticles  

E-Print Network (OSTI)

This thesis presents the detailed experimental and theoretical characterization of light-emitting devices (LEDs) based on organic semiconductors and colloidal quantum dots (QDs). This hybrid material system has several ...

Anikeeva, Polina Olegovna

2009-01-01T23:59:59.000Z

25

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents (OSTI)

A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

Sopori, Bhushan L. (Denver, CO); Allen, Larry C. (Arvada, CO); Marshall, Craig (Littleton, CO); Murphy, Robert C. (Golden, CO); Marshall, Todd (Littleton, CO)

1998-01-01T23:59:59.000Z

26

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents (OSTI)

A method and apparatus are disclosed for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby. 44 figs.

Sopori, B.L.; Allen, L.C.; Marshall, C.; Murphy, R.C.; Marshall, T.

1998-05-26T23:59:59.000Z

27

ECE 344--Semiconductor Devices & Materials ECE Department, UMass Amherst  

E-Print Network (OSTI)

Topics: Fundamentals of Semiconductors; Theory of Electrical Conduction; Device Operations (See "Class

Massachusetts at Amherst, University of

28

Electroluminescence from colloidal semiconductor CdSe nanoplatelets in hybrid organic–inorganic light emitting diode  

Science Journals Connector (OSTI)

Abstract We report on the fabrication of a hybrid light-emitting-diode based on colloidal semiconductor CdSe nanoplatelets as emitters and organic TAZ [3-(Biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole] and TPD [N, N?-bis (3-methylphenyl)-N, N?-bis (phenyl)-benzidine] materials as the electron and hole transporting layers. Electroluminescent and current–voltage characteristics of the developed hybrid device with the turn-on voltage of 5.5 V and the radiation wavelength of 515 nm have been obtained. Semiconductor nanoplatelets like CdSe are attractive for the fabrication of hybrid \\{LEDs\\} with low operating voltages, spectrally pure color and short-wavelength electroluminescence, which is required for RGB devices.

A.G. Vitukhnovsky; V.S. Lebedev; A.S. Selyukov; A.A. Vashchenko; R.B. Vasiliev; M.S. Sokolikova

2015-01-01T23:59:59.000Z

29

Mechanistic Studies of Charge Injection from Metallic Electrodes into Organic Semiconductors Mediated by Ionic Functionalities: Final Report  

SciTech Connect

Metal-organic semiconductor interfaces are important because of their ubiquitous role in determining the performance of modern electronics such as organic light emitting diodes (OLEDs), fuel cells, batteries, field effect transistors (FETs), and organic solar cells. Interfaces between metal electrodes required for external wiring to the device and underlying organic structures directly affect the charge carrier injection/collection efficiency in organic-based electronic devices primarily due to the mismatch between energy levels in the metal and organic semiconductor. Environmentally stable and cost-effective electrode materials, such as aluminum and gold typically exhibit high potential barriers for charge carriers injection into organic devices leading to increased operational voltages in OLEDs and FETs and reduced charge extraction in photovoltaic devices. This leads to increased power consumption by the device, reduced overall efficiency, and decreased operational lifetime. These factors represent a significant obstacle for development of next generation of cheap and energy-efficient components based on organic semiconductors. It has been noticed that introduction of organic materials with conjugated backbone and ionic pendant groups known as conjugated poly- and oligoelectrolytes (CPEs and COEs), enables one to reduce the potential barriers at the metal-organic interface and achieve more efficient operation of a device, however exact mechanisms of the phenomenon have not been understood. The goal of this project was to delineate the function of organic semiconductors with ionic groups as electron injection layers. The research incorporated a multidisciplinary approach that encompassed the creation of new materials, novel processing techniques, examination of fundamental electronic properties and the incorporation of the resulting knowledgebase into development of novel organic electronic devices with increased efficiency, environmental stability, and reduced cost. During the execution of the project, main efforts were focused on the synthesis of new charge-bearing organic materials, such as CPEs and COEs, and block copolymers with neutral and ionic segments, studies of mechanisms responsible for the charge injection modulation in devices with ionic interlayers, and use of naturally occurring charged molecules for creation of enhanced devices. The studies allowed PIs to demonstrate the usefulness of the proposed approach for the improvement of operational parameters in model OLED and FET systems resulting in increased efficiency, decreased contact resistance, and possibility to use stable metals for fabrication of device electrodes. The successful proof-of-the-principle results potentially promise development of light-weight, low fabrication cost devices which can be used in consumer applications such as displays, solar cells, and printed electronic devices. Fundamental mechanisms responsible for the phenomena observed have been identified thus advancing the fundamental knowledgebase.

Nguyen, Thuc-Quyen [UCSB; Bazan, Guillermo [UCSB; Mikhailovsky, Alexander [UCSB

2014-04-15T23:59:59.000Z

30

Center for Nanophase Materials Sciences (CNMS) - CNMS User Research  

NLE Websites -- All DOE Office Websites (Extended Search)

charge injection in organic semiconducting materials for improving the optoelectronic properties of organic semiconductor devices. Publication " Spin injection from...

31

Compositions of doped, co-doped and tri-doped semiconductor materials  

DOE Patents (OSTI)

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

Lynn, Kelvin (Pullman, WA); Jones, Kelly (Colfax, WA); Ciampi, Guido (Watertown, MA)

2011-12-06T23:59:59.000Z

32

Dopant type and/or concentration selective dry photochemical etching of semiconductor materials  

DOE Patents (OSTI)

Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p-type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Ashby, C.R.H.; Dishman, J.L.

1985-10-11T23:59:59.000Z

33

Dopant type and/or concentration selective dry photochemical etching of semiconductor materials  

DOE Patents (OSTI)

A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

1987-01-01T23:59:59.000Z

34

Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors  

SciTech Connect

This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

Zhu, Xiaoyang; Frisbie, C Daniel

2012-08-13T23:59:59.000Z

35

Apparatus and method for oxidizing organic materials  

DOE Patents (OSTI)

The invention is a method and apparatus using high cerium concentration in the anolyte of an electrochemical cell to oxidize organic materials. The method and apparatus further use an ultrasonic mixer to enhance the oxidation rate of the organic material in the electrochemical cell. 6 figs.

Surma, J.E.; Bryan, G.H.; Geeting, J.G.H.; Butner, R.S.

1998-01-13T23:59:59.000Z

36

Self-assembly of 1-D organic semiconductor nanostructures Thuc-Quyen Nguyen,*a  

E-Print Network (OSTI)

Self-assembly of 1-D organic semiconductor nanostructures Thuc-Quyen Nguyen,*a Richard Martel: 10.1039/b609956d This review focuses on the molecular design and self-assembly of a new class have a permanent dipole moment that sums as the subunits self assemble into molecular stacks

Hone, James

37

Sandia National Labs: PCNSC: Departments: Semiconductor and Optical  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductor & Optical Sciences Semiconductor & Optical Sciences > Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering Research Jeff Nelson Jerry A. Simmons Sr. Manager Idabelle Idabelle Courtney Admin. Asst. Departments Semiconductor and Optical Sciences The Semiconductor and Optical Sciences Department oversees the operations of the following departments providing new scientific knowledge that can lead to technology solutions in the areas of: Compound semiconductor optoelectronic materials and devices Chemical science to materials technologies, emphasizing the science and engineering of Metal Organic Chemical Vapor Deposition (MOCVD) Remote sensing and detection of WMD proliferation activities

38

Transition-metal silicides as materials for magnet-semiconductor heterostructures*  

E-Print Network (OSTI)

Transition-metal silicides as materials for magnet-semiconductor heterostructures* Peter Kratzer as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the 001 surface retains the half-metallic character of the bulk if a fully Mn

39

Superatoms and Metal-Semiconductor Motifs for Cluster Materials  

SciTech Connect

A molecular understanding of catalysis and catalytically active materials is of fundamental importance in designing new substances for applications in energy and fuels. We have performed reactivity studies and ultrafast ionization and coulomb explosion studies on a variety of catalytically-relevant materials, including transition metal oxides of Fe, Co, Ni, Cu, Ti, V, Nb, and Ta. We demonstrate that differences in charge state, geometry, and elemental composition of clusters of such materials determine chemical reactivity and ionization behavior, crucial steps in improving performance of catalysts.

Castleman, A. W.

2013-10-11T23:59:59.000Z

40

System for characterizing semiconductor materials and photovoltaic device  

DOE Patents (OSTI)

Apparatus for detecting and mapping defects in the surfaces of polycrystalline material in a manner that distinguishes dislocation pits from grain boundaries includes a first laser of a first wavelength for illuminating a wide spot on the surface of the material, a second laser of a second relatively shorter wavelength for illuminating a relatively narrower spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate raster mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. A reflectance measurement of the piece of material is obtained by adding together the signals from the optical detection devices. In the case where the piece of material includes a photovoltaic device, the current induced in the device by the illuminating light can be measured with a current sensing amplifier after the light integrating sphere is moved away from the device. 22 figs.

Sopori, B.L.

1996-12-03T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Rapid Roughening in Thin Film Growth of an Organic Semiconductor (Diindenoperylene) A. C. Durr,1,* F. Schreiber,1,2,  

E-Print Network (OSTI)

Rapid Roughening in Thin Film Growth of an Organic Semiconductor (Diindenoperylene) A. C. Du¨rr,1 roughening mechanism related to grain boundaries between tilt domains, which are a common feature of many

Schreiber, Frank

42

Organic Photovoltaics | Center for Energy Efficient Materials  

NLE Websites -- All DOE Office Websites (Extended Search)

polymer and small molecule semiconductor blends that function as the active layer in solar cell devices. The effort brings together a cohesive and mutually complementary set of...

43

Shock-induced chemistry in organic materials  

SciTech Connect

The combined 'extreme' environments of high pressure, temperature, and strain rates, encountered under shock loading, offer enormous potential for the discovery of new paradigms in chemical reactivity not possible under more benign conditions. All organic materials are expected to react under these conditions, yet we currently understand very little about the first bond-breaking steps behind the shock front, such as in the shock initiation of explosives, or shock-induced reactivity of other relevant materials. Here, I will present recent experimental results of shock-induced chemistry in a variety of organic materials under sustained shock conditions. A comparison between the reactivity of different structures is given, and a perspective on the kinetics of reaction completion under shock drives.

Dattelbaum, Dana M [Los Alamos National Laboratory; Sheffield, Steve [Los Alamos National Laboratory; Engelke, Ray [Los Alamos National Laboratory; Manner, Virginia [Los Alamos National Laboratory; Chellappa, Raja [Los Alamos National Laboratory; Yoo, Choong - Shik [WASHINGTON STATE UNIV

2011-01-20T23:59:59.000Z

44

Heterogeneous reaction mechanisms and kinetics relevant to the CVD of semiconductor materials  

SciTech Connect

This report documents the state of the art in experimental and theoretical techniques for determining reaction mechanisms and chemical kinetics of heterogeneous reactions relevant to the chemical vapor deposition of semiconductor materials. It summarizes the most common ultra-high vacuum experimental techniques that are used and the types of rate information available from each. Several case studies of specific chemical systems relevant to the microelectronics industry are described. Theoretical methods for calculating heterogeneous reaction rate constants are also summarized.

Creighton, J.R.; Coltrin, M.E.

1994-03-01T23:59:59.000Z

45

Influences of semiconductor morphology on the mechanical fatigue behavior of flexible organic electronics  

SciTech Connect

The influence of crystalline morphology on the mechanical fatigue of organic semiconductors (OSCs) was investigated using 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as a crystalline OSC and poly(triarylamine) (PTAA) as an amorphous OSC. During cyclic bending, resistances of the OSCs were monitored using the transmission-line method on a metal-semiconductor-metal structure. The resistance of the TIPS-pentacene increased under fatigue damage in tensile-stress mode, but no such degradation was observed in the PTAA. Both OSCs were stable under compressive bending fatigue. The formation of intergranular cracks at the domain boundaries of the TIPS-pentacene was responsible for the degradation of its electrical properties under tensile bending fatigue.

Lee, Young-Joo; Yeon, Han-Wool; Shin, Hae-A-Seul; Joo, Young-Chang, E-mail: ycjoo@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, 151-744 Seoul (Korea, Republic of)] [Department of Materials Science and Engineering, Seoul National University, 151-744 Seoul (Korea, Republic of); Uk Lee, Yong; Evans, Louise A. [Center for Process Innovation Limited, Thomas Wright Way, NETPark, Sedgefield, TS21 3FG County Durham (United Kingdom)] [Center for Process Innovation Limited, Thomas Wright Way, NETPark, Sedgefield, TS21 3FG County Durham (United Kingdom)

2013-12-09T23:59:59.000Z

46

Organic materials with nonlinear optical properties  

DOE Patents (OSTI)

The present invention is directed to organic materials that have the ability to double or triple the frequency of light that is directed through the materials. Particularly, the present invention is directed to the compound 4-[4-(2R)-2-cyano-7-(4{prime}-pentyloxy-4-biphenylcarbonyloxy)phenylheptylidenephenylcarbonyloxy]benzaldehyde, which can double the frequency of light that is directed through the compound. The invention is also directed to the compound (12-hydroxy-5,7-dodecadiynyl)-4{prime}-[(4{prime}-pentyloxy-4-biphenyl)carbonyloxy]-4-biphenylcarboxylate, and its polymeric form. The polymeric form can triple the frequency of light directed through it. 4 figs.

Stupp, S.I.; Son, S.; Lin, H.C.

1995-05-02T23:59:59.000Z

47

Microporous Metal Organic Materials for Hydrogen Storage  

SciTech Connect

We have examined a number of Metal Organic Framework Materials for their potential in hydrogen storage applications. Results obtained in this study may, in general, be summarized as follows: (1) We have identified a new family of porous metal organic framework materials with the compositions M (bdc) (ted){sub 0.5}, {l_brace}M = Zn or Co, bdc = biphenyl dicarboxylate and ted = triethylene diamine{r_brace} that adsorb large quantities of hydrogen ({approx}4.6 wt%) at 77 K and a hydrogen pressure of 50 atm. The modeling performed on these materials agree reasonably well with the experimental results. (2) In some instances, such as in Y{sub 2}(sdba){sub 3}, even though the modeling predicted the possibility of hydrogen adsorption (although only small quantities, {approx}1.2 wt%, 77 K, 50 atm. hydrogen), our experiments indicate that the sample does not adsorb any hydrogen. This may be related to the fact that the pores are extremely small or may be attributed to the lack of proper activation process. (3) Some samples such as Zn (tbip) (tbip = 5-tert butyl isophthalate) exhibit hysteresis characteristics in hydrogen sorption between adsorption and desorption runs. Modeling studies on this sample show good agreement with the desorption behavior. It is necessary to conduct additional studies to fully understand this behavior. (4) Molecular simulations have demonstrated the need to enhance the solid-fluid potential of interaction in order to achieve much higher adsorption amounts at room temperature. We speculate that this may be accomplished through incorporation of light transition metals, such as titanium and scandium, into the metal organic framework materials.

S. G. Sankar; Jing Li; Karl Johnson

2008-11-30T23:59:59.000Z

48

Generic tool for modelling and simulation of semiconductor intrabay material handling system  

Science Journals Connector (OSTI)

Semiconductor manufacturing facilities are migrating to 300 mm technology, necessitating the implementation of automated material handling systems (AMHS) for a variety of ergonomic and safety considerations. A predictive tool, such as software simulation, is needed at the planning stage to estimate the performance of these relatively new systems. Two forms of AMHS are in general use in industry one which handles material within a group of machines (a bay) and one which transfers material between bays. This paper presents a generic tool for modelling and simulation of an intrabay AMHS. The model utilises a library of different blocks representing the different components of any intrabay material handling system, providing a tool that allows rapid building and analysis of an AMHS under different operating conditions. The ease of use of the system means that inexpert users have the ability to generate good models.

K.S. El-Kilany; P. Young; M.A. El Baradie

2004-01-01T23:59:59.000Z

49

Recent advances as materials of functional metal-organic frameworks  

Science Journals Connector (OSTI)

Metal-organic frameworks (MOFs), also known as hybrid inorganic-organic materials, represent an emerging class of materials that have attracted the imagination of solid-state chemists because MOFs combine unprecedented levels of porosity with a range ...

Xiao-Lan Tong; Hai-Lu Lin; Jian-Hua Xin; Fen Liu; Min Li; Xia-Ping Zhu

2013-01-01T23:59:59.000Z

50

Organic photosensitive cells grown on rough electrode with nano-scale morphology control  

DOE Patents (OSTI)

An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.

Yang, Fan (Piscataway, NJ); Forrest, Stephen R. (Ann Arbor, MI)

2011-06-07T23:59:59.000Z

51

III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.  

SciTech Connect

The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

2003-12-01T23:59:59.000Z

52

Simple Way to Engineer Metal–Semiconductor Interface for Enhanced Performance of Perovskite Organic Lead Iodide Solar Cells  

Science Journals Connector (OSTI)

Simple Way to Engineer Metal–Semiconductor Interface for Enhanced Performance of Perovskite Organic Lead Iodide Solar Cells ... ‡ School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China ... However, ALD technique has the problems of strict working environment like vacuum and high cost precursors. ...

Yuzhuan Xu; Jiangjian Shi; Songtao Lv; Lifeng Zhu; Juan Dong; Huijue Wu; Yin Xiao; Yanhong Luo; Shirong Wang; Dongmei Li; Xianggao Li; Qingbo Meng

2014-04-01T23:59:59.000Z

53

Nanocomposites of Semimetallic ErAs Nanoparticles Epitaxially Embedded within InGaAlAs-based Semiconductors for Thermoelectric Materials  

E-Print Network (OSTI)

GaAlAs-based Semiconductors for Thermoelectric Materials J.M.O. Zide', G. Zeng2, J.H. Bahk2, W. Kim3, S. L. Singer3, D array based on these materials for thermoelectric power generation; a power density > 1 W/cm2 is demonstrated with a temperature gradient of 120°C. Solid-state thermionics Efficient thermoelectric materials

54

Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications  

Science Journals Connector (OSTI)

Electronic and photonic information technology and renewable energy alternatives, such as solar energy, fuel cells and batteries, have now reached an advanced stage in their development. Cost-effective improvements to current technological approaches have made great progress, but certain challenges remain. As feature sizes of the latest generations of electronic devices are approaching atomic dimensions, circuit speeds are now being limited by interconnect bottlenecks. This has prompted innovations such as the introduction of new materials into microelectronics manufacturing at an unprecedented rate and alternative technologies to silicon CMOS architectures. Despite the environmental impact of conventional fossil fuel consumption, the low cost of these energy sources has been a long-standing economic barrier to the development of alternative and more efficient renewable energy sources, fuel cells and batteries. In the face of mounting environmental concerns, interest in such alternative energy sources has grown. It is now widely accepted that nanotechnology offers potential solutions for securing future progress in information and energy technologies. The Canadian Semiconductor Technology Conference (CSTC) forum was established 25 years ago in Ottawa as an important symbol of the intrinsic strength of the Canadian semiconductor research and development community, and the Canadian semiconductor industry as a whole. In 2007, the 13th CSTC was held in Montreal, moving for the first time outside the national capital region. The first three meetings in the series of 'Nano and Giga Challenges in Electronics and Photonics'— NGCM2002 in Moscow, NGCM2004 in Krakow, and NGC2007 in Phoenix— were focused on interdisciplinary research from the fundamentals of materials science to the development of new system architectures. In 2009 NGC2009 and the 14th Canadian Semiconductor Technology Conference (CSTC2009) were held as a joint event, hosted by McMaster University (10–14 August, Hamilton, Ontario, Canada) and the scope was expanded to include renewable energy research and development. This special issue of Nanotechnology is devoted to a better understanding of the function and design of semiconductor devices that are relevant to information technology (both electronics and photonics based) and renewable energy applications. The papers contained in this special issue are selected from the NGC/CSTC2009 symposium. Among them is a report by Ray LaPierre from McMaster University and colleagues at the University of Waterloo in Canada on the ability to manipulate single spins in nanowire quantum bits. The paper also reports the development of a testbed of a few qubits for general quantum information processing tasks [1]. Lower cost and greater energy conversion efficiency compared with thin film devices have led to a high level of activity in nanowire research related to photovoltaic applications. This special issue also contains results from an impedance spectroscopy study of core–shell GaAs nanowires to throw light on the transport and recombination mechanisms relevant to solar cell research [2]. Information technology research and renewable energy sources are research areas of enormous public interest. This special issue addresses both theoretical and experimental achievements and provides a stimulating outlook for technological developments in these highly topical fields of research. References [1] Caram J, Sandoval C, Tirado M, Comedi D, Czaban J, Thompson D A and LaPierre R R 2101 Nanotechnology 21 134007 [2] Baugh J, Fung J S and LaPierre RR 2010 Nanotechnology 21 134018

Stephen Goodnick; Anatoli Korkin; Predrag Krstic; Peter Mascher; John Preston; Alex Zaslavsky

2010-01-01T23:59:59.000Z

55

Laser Ablation of Organic Materials for discrimination of bacteria in an  

NLE Websites -- All DOE Office Websites (Extended Search)

Laser Ablation of Organic Materials for discrimination of bacteria in an Laser Ablation of Organic Materials for discrimination of bacteria in an organic background Title Laser Ablation of Organic Materials for discrimination of bacteria in an organic background Publication Type Conference Proceedings Year of Publication 2009 Authors Baudelet, Matthieu, Myriam Boueri, Jin Yu, Xianglei Mao, Samuel S. Mao, and Richard E. Russo Conference Name Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII Series Title Proceedings SPIE Volume 7214 Pagination 72140J Date Published 02/2009 Abstract We demonstrate in this paper that laser ablation allows efficient analysis of organic and biological materials. Such analysis is based on laser-induced breakdown spectroscopy (LIBS) which consists in the detection of the optical emission from the plasma induced by a high intensity laser pulse focused on the sample surface. The optimization of the ablation regime in terms of laser parameters (pulse duration, wavelength, fluence) is important to generate a plasma suitable for the analysis. We first present the results of a study of laser ablation of organic samples with different laser parameters using time-resolved shadowgraph. We correlate the early stage expansion of the plasma to its optical emission properties, which allows us to choose suitable laser parameters for an efficient analysis of organic or biological samples by LIBS. As an illustration of the analytical ability of LIBS for biological materials, we show that the emission from CN molecules can be used to distinguish between biological and inorganic samples. Native CN molecular fragment directly ablated from a biological sample are identified using time-resolved LIBS. Those due to recombination with nitrogen contained in atmospheric air can be distinguished with their specific time evolution behavior.

56

Organic solar cells: Structure, materials, critical characteristics, and outlook  

Science Journals Connector (OSTI)

This review surveys recent advances in the field of photovoltaic devices based on organic photoactive materials and used for converting solar energy into electricity. Different architectures of organic photovolta...

P. A. Troshin; R. N. Lyubovskaya; V. F. Razumov

2008-06-01T23:59:59.000Z

57

OrganicHybrid PV Background.pptx  

NLE Websites -- All DOE Office Websites (Extended Search)

Excitonic solar cells, comprised of materials such as organic semiconductors, inorganic colloidal quantum dots, and carbon nanotubes, are fundamentally different than crystalline,...

58

Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms  

Science Journals Connector (OSTI)

We present a portable ultrafast Semiconductor Disk Laser (SDL) (or vertical extended cavity surface emitting laser—VECSELs), to be used for nonlinear microscopy. The SDL is...

Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Santos, Susana I C O; Artigas, David; Loza-Alvarez, Pablo

2011-01-01T23:59:59.000Z

59

Photoconversion of gasified organic materials into biologically-degradable plastics  

DOE Patents (OSTI)

A process is described for converting organic materials (such as biomass wastes) into a bioplastic suitable for use as a biodegradable plastic. In a preferred embodiment the process involves thermally gasifying the organic material into primarily carbon monoxide and hydrogen, followed by photosynthetic bacterial assimilation of the gases into cell material. The process is ideally suited for waste recycling and for production of useful biodegradable plastic polymer. 3 figures.

Weaver, P.F.; Pinching Maness.

1993-10-05T23:59:59.000Z

60

Photoconversion of gasified organic materials into biologically-degradable plastics  

DOE Patents (OSTI)

A process is described for converting organic materials (such as biomass wastes) into a bioplastic suitable for use as a biodegradable plastic. In a preferred embodiment the process involves thermally gasifying the organic material into primarily carbon monoxide and hydrogen, followed by photosynthetic bacterial assimilation of the gases into cell material. The process is ideally suited for waste recycling and for production of useful biodegradable plastic polymer.

Weaver, Paul F. (Golden, CO); Maness, Pin-Ching (Golden, CO)

1993-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Proceeding of the Canadian Semiconductor Technology Conference, (2007), 225-226. Influence of structural organization on the electronic  

E-Print Network (OSTI)

materials at a large-scale and a low-cost production. Among these applications, organic photovoltaic devices% have been reported in the literature [1]. Although the actual market for solar cell is almost entirely of structural organization on the electronic properties of organic photovoltaic materials A. Maillard et A

Rochefort, Alain

62

An investigation into the paintbrush deposition technique for P3HT:PCBM based organic heterojunction solar cells.  

E-Print Network (OSTI)

??Research in organic semiconductor materials and devices has increased dramatically in the last decade, particularly in the photovoltaics field. Organic based solar cells with record… (more)

Thoeming, Aaron Lee

2011-01-01T23:59:59.000Z

63

Titan's Inventory of Organic Surface Materials Ralph D. Lorenz1,*  

E-Print Network (OSTI)

1 Titan's Inventory of Organic Surface Materials Ralph D. Lorenz1,* , Karl L. Mitchell2 , Randolph observations now permit an initial assessment of the inventory of two classes, presumed to be organic, of Titan observed, of which dozens are each estimated to contain more hydrocarbon liquid than the entire known oil

Paris-Sud XI, Université de

64

Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use  

DOE Patents (OSTI)

Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)

2000-01-01T23:59:59.000Z

65

Organic light emitting device architecture for reducing the number of organic materials  

DOE Patents (OSTI)

An organic light emitting device is provided. The device includes an anode and a cathode. A first emissive layer is disposed between the anode and the cathode. The first emissive layer includes a first non-emitting organic material, which is an organometallic material present in the first emissive layer in a concentration of at least 50 wt %. The first emissive layer also includes a first emitting organic material. A second emissive layer is disposed between the first emissive layer and the cathode, preferably, in direct contact with the first emissive layer. The second emissive material includes a second non-emitting organic material and a second emitting organic material. The first and second non-emitting materials, and the first and second emitting materials, are all different materials. A first non-emissive layer is disposed between the first emissive layer and the anode, and in direct contact with the first emissive layer. The first non- emissive layer comprises the first non-emissive organic material.

D'Andrade, Brian (Westampton, NJ); Esler, James (Levittown, PA)

2011-10-18T23:59:59.000Z

66

NETL: Ambient Monitoring - Contribution of Semi-volatile Organic Material  

NLE Websites -- All DOE Office Websites (Extended Search)

Semi-volatile Organics in PM Semi-volatile Organics in PM This project is a cooperative effort between Brigham Young University (BYU) and researchers from the DOE-NETL Office of Science and and Engineering Research to determine the contribution of semi-volatile particulate organic compounds (SVOC) to total ambient suspended fine particulate mass at the NETL-Pittsburgh air monitoring facility. Project funding comes from DOE‘s University Coal Research (UCR) program. The hypothesis of the project is that fine particulate mass will be significantly under-determined in urban environments using single filter samplers such as the PM2.5 Federal Reference Method (FRM) because of the loss of semi-volatile organic compounds (SVOC) from the particles during sampling and storage. It is postulated that fine particulate mass, including the semi-volatile fine particulate organic species, are an appropriate surrogate for the components of fine particles which are associated with observed mortality and morbidity effects in epidemiological studies. Further, it is postulated that the most important fraction of the semi-volatile organic material with respect to exacerbation of health problems will be semi-volatile secondary compounds formed from reactions of volatile organic material with ozone and nitrogen oxides. Under-determination of these semi-volatile species will tend to over emphasize the importance of non-volatile fine particulate components such as sulfate or may reduce the significance of correlations with measured health effects.

67

Method and apparatus for electron-only radiation detectors from semiconductor materials  

DOE Patents (OSTI)

A system for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and Hgl.sub.2, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.

Lund, James C. (429 Warwick Ave., San Leandro, CA 94577)

2000-01-01T23:59:59.000Z

68

Molecular dynamics investigations of modulated phases in organic materials  

Science Journals Connector (OSTI)

Molecular dynamics (MD) has evolved into a reliable technique for simulating incommensurate modulated phases. The application of a compensating external pressure tensor to organic materials allows a better fit to the experimental measurements. An overview of the MD method and its applications is presented here.

Pan, Y.

2004-12-22T23:59:59.000Z

69

High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor  

SciTech Connect

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

Ono, S., E-mail: shimpei@criepi.denken.or.jp [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Häusermann, R. [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan) [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland); Chiba, D. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan) [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 322-0012 (Japan); Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan); Shimamura, K.; Ono, T. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)] [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Batlogg, B. [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)] [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)

2014-01-06T23:59:59.000Z

70

Method of photocatalytic conversion of C-H organics  

DOE Patents (OSTI)

The present invention is the addition of a semiconductor material and energy to the reaction mixture of organic, acid (for example, trifluoroacetate), and oxygen. A transition metal ion may be added to the reaction mixture. The semiconductor material converts energy to oxidants thereby promoting oxidation of the organic. Alternatively, using metal in combination with exposure to light may be used.

Camaioni, Donald M. (Richland, WA); Lilga, Michael A. (Richland, WA)

1998-01-01T23:59:59.000Z

71

Method of photocatalytic conversion of C-H organics  

DOE Patents (OSTI)

The present invention is the addition of a semiconductor material and energy to the reaction mixture of organic, acid (for example, trifluoroacetate), and oxygen. A transition metal ion may be added to the reaction mixture. The semiconductor material converts energy to oxidants thereby promoting oxidation of the organic. Alternatively, using metal in combination with exposure to light may be used.

Camaioni, D.M.; Lilga, M.A.

1998-01-13T23:59:59.000Z

72

Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials  

DOE Patents (OSTI)

An apparatus for measuring the minority carrier lifetime of a semiconductor sample using radio-frequency coupling. The measuring apparatus includes an antenna that is positioned a coupling distance from a semiconductor sample which is exposed to light pulses from a laser during sampling operations. A signal generator is included to generate high frequency, such as 900 MHz or higher, sinusoidal waveform signals that are split into a reference signal and a sample signal. The sample signal is transmitted into a sample branch circuit where it passes through a tuning capacitor and a coaxial cable prior to reaching the antenna. The antenna is radio-frequency coupled with the adjacent sample and transmits the sample signal, or electromagnetic radiation corresponding to the sample signal, to the sample and receives reflected power or a sample-coupled-photoconductivity signal back. To lower impedance and speed system response, the impedance is controlled by limiting impedance in the coaxial cable and the antenna reactance. In one embodiment, the antenna is a waveguide/aperture hybrid antenna having a central transmission line and an adjacent ground flange. The sample-coupled-photoconductivity signal is then transmitted to a mixer which also receives the reference signal. To enhance the sensitivity of the measuring apparatus, the mixer is operated to phase match the reference signal and the sample-coupled-photoconductivity signal.

Johnston, Steven W. (Golden, CO); Ahrenkiel, Richard K. (Lakewood, CO)

2002-01-01T23:59:59.000Z

73

Semiconductor bridge (SCB) detonator  

DOE Patents (OSTI)

The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

Bickes, Jr., Robert W. (Albuquerque, NM); Grubelich, Mark C. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

74

Organic Light Emitting Diodes: materials, device structures and light extraction  

Science Journals Connector (OSTI)

Organic Light Emitting Devices (OLEDs) are presented with particular emphasis on materials, device structures and strategies to improve light extraction. For the fabrication of efficient OLEDs, two types of electroluminescent materials are used (small molecules and polymers) with efficiencies and lifetimes which are now acceptable for small size or low content information displays. Two main approaches are described to enhance external efficiency, one is based on direct modification of the species emission and the other on modification of emitted guided modes propagation within the device. The features of the different approaches are evidenced through examples of devices reported in the literature.

B. Geffroy; L. Rocha

2009-01-01T23:59:59.000Z

75

Post-accident gas generation from radiolysis of organic materials  

SciTech Connect

This report presents a methodology for estimating the gas generation rates resulting from radiolysis of organic materials in paints and electrical cable insulation inside a nuclear reactor containment building under design basis accident conditions. The methodology was based on absorption of the radiation energies from the post-accident fission products and the assumed gas yields of the irradiated materials. A sample calculation was made using conservative assumptions, plant-specific data of a nuclear power plant, and a radiation source term which took into account the time-dependent release and physico-chemical behavior of the fission products.

Wing, J.

1984-09-01T23:59:59.000Z

76

Demolitions Produce Recyclable Materials for Organization Promoting Economic Activity  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

August 15, 2011 August 15, 2011 Demolitions Produce Recyclable Materials for Organization Promoting Economic Activity PIKETON, Ohio - Demolitions have helped generate more than 8 million pounds of metal at the Piketon site for recycling, further promoting economic activity in the region thanks to the American Recovery and Reinvestment Act. Proceeds from recycling that metal through the unique program will add to the more than $2.8 million already generated from recycling more than 5.2 million pounds of material from site demolition efforts. "This metal represents economic opportunity for the surround- ing community, as proceeds from this material will create local jobs, utilize surrounding area facilities and generate money to be reinvested back into the community," said Pete Mingus, who

77

Semiconductor devices incorporating multilayer interference regions  

DOE Patents (OSTI)

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31T23:59:59.000Z

78

Alternative methods and materials for patterning organic thin film electronics  

E-Print Network (OSTI)

Photolithography's accuracy and scalability have made it the method for sub-micronscale definition of single-crystal semiconductor devices for over half a century. The ultimate goal for OLED manufacturing, however, is to ...

Bahlke, Matthias Erhard

2014-01-01T23:59:59.000Z

79

Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods  

SciTech Connect

Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

LeToquin, Ronan P; Tong, Tao; Glass, Robert C

2014-12-30T23:59:59.000Z

80

A method for detecting breakthrough of organic solvent vapors in a charcoal tube using semiconductor gas sensors  

SciTech Connect

This study developed a method for detecting organic vapors that break through charcoal tubes, using semiconductor gas sensors as a breakthrough detector of vapors. A glass column equipped with two sensors was inserted in Teflon tubing, and air containing organic vapor was introduced at a constant flow rate. After the output signal of the sensors became stable, a charcoal tube was inserted into the tubing at the upstream of the sensors. The resistance of the sensors was collected temporally in an integrated circuit (IC) card. The vapor concentration of the air near the sensors was measured with a gas chromatograph (GC) equipped with a flame ionization detector (FID) at intervals of 5 minutes to obtain the breakthrough curve. When the relative humidity was zero, the output signals of the sensors began to change before the breakthrough point (1% breakthrough time). This tendency was almost the same for methyl acetate, ethyl acetate, isopropyl alcohol (IPA), toluene, and chloroform. For dichloromethane and 1,1,1-trichloroethane, the time when the sensor output signals began to rise was almost the same as the breakthrough point. When the relative humidity was 80 percent, the sensors could also detect many vapors before the breakthrough point, but they could not perceive dichloromethane and chloroform vapors. A personal sampling system with a breakthrough detector was developed and its availability is discussed.

Hori, Hajime; Noritake, Yuji; Murobushi, Hisako; Higashi, Toshiaki; Tanaka, Isamu

1999-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Thin Film Solid-State Reactions Forming Carbides as Contact Materials for Carbon-Containing Semiconductors  

SciTech Connect

Metal carbides are good candidates to contact carbon-based semiconductors (SiC, diamond, and carbon nanotubes). Here, we report on an in situ study of carbide formation during the solid-state reaction between thin films. The solid-state reaction was examined between 11 transition metals (W, Mo, Fe, Cr, V, Nb, Mn, Ti, Ta, Zr, and Hf) and an amorphous carbon layer. Capping layers (C or TiN) of different thicknesses were applied to prevent oxidation. Carbide formation is evidenced for nine metals and the phases formed have been identified (for a temperature ranging from 100 to 1100 C). W first forms W{sub 2}C and then WC; Mo forms Mo{sub 2}C; Fe forms Fe{sub 3}C; Cr first forms metastable phases Cr{sub 2}C and Cr{sub 3}C{sub 2-x}, and finally forms Cr{sub 3}C{sub 2}; V forms VC{sub x}; Nb transforms into Nb{sub 2}C followed by NbC; Ti forms TiC; Ta first forms Ta{sub 2}C and then TaC; and Hf transforms into HfC. The activation energy for the formation of the various carbide phases has been obtained by in situ x-ray diffraction.

Leroy,W.; Detavernier, C.; Van Meirhaeghe, R.; Lavoie, C.

2007-01-01T23:59:59.000Z

82

Organic Macromolecular High Dielectric Constant Materials: Synthesis, Characterization, and Applications  

Science Journals Connector (OSTI)

It will lead to a thermal effect and perhaps thermal failure of devices. ... The white light was then overlapped with the pump beam in a 2 mm quartz cuvette containing the sample, and the change in the absorbance for the signal was collected by a CCD detector (Ocean Optics). ... In many ?-conjugated organic materials, up-converted ultrafast fluorescence dynamics and anisotropy decay experiments have been applied successfully to reveal possible ultrafast processes, such as vibrational relaxation and singlet–singlet annihilation, occurring in a time scale shorter than 20 ps, and to validate the presence and type of intramolecular energy and charge transfer processes. ...

Meng Guo; Teruaki Hayakawa; Masa-aki Kakimoto; Theodore Goodson; III

2011-09-27T23:59:59.000Z

83

Novel patterning techniques for manufacturing organic and nanostructured electronics  

E-Print Network (OSTI)

Molecular organic semiconductors and nanometer size particles are two new classes of functional materials allowing fabrication of electronic devices on low-cost and large area substrates. Patterning these electronic materials ...

Chen, Jianglong, 1976-

2007-01-01T23:59:59.000Z

84

Testing of organic waste surrogate materials in support of the Hanford organic tank program. Final report  

SciTech Connect

To address safety issues regarding effective waste management efforts of underground organic waste storage tanks at the Hanford Site, the Bureau of Mines conducted a series of tests, at the request of the Westinghouse Hanford company. In this battery of tests, the thermal and explosive characteristics of surrogate materials, chosen by Hanford, were determined. The surrogate materials were mixtures of inorganic and organic sodium salts, representing fuels and oxidants. The oxidants were sodium nitrate and sodium nitrite. The fuels were sodium salts of oxalate, citrate and ethylenediamine tetraacetic acid (EDTA). Polyethylene powder was also used as a fuel with the oxidant(s). Sodium aluminate was used as a diluent. In addition, a sample of FeCN, supplied by Hanford was also investigated.

Turner, D.A. [Westinghouse Hanford Co., Richland, WA (United States); Miron, Y. [Bureau of Mines (United States)

1994-01-01T23:59:59.000Z

85

Preparation and thermal properties of expanded graphite/paraffin/organic montmorillonite composite phase change material  

Science Journals Connector (OSTI)

Expanded graphite (EG)/paraffin/organic montmorillonite (OMMT) composite phase change material (PCM) was prepared by using melt...

Hongtao Kao; Min Li; Xuewen Lv; Jinmiao Tan

2012-01-01T23:59:59.000Z

86

Method of passivating semiconductor surfaces  

DOE Patents (OSTI)

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Wanlass, Mark W. (Golden, CO)

1990-01-01T23:59:59.000Z

87

The Development of Semiconducting Materials for Organic Photovoltaics  

E-Print Network (OSTI)

F. C. ; Norrman, K. Prog. Photovoltaics 2007, 15, 697–712.Processed Organic Photovoltaics that Generate Chargepolymer-based organic photovoltaics (OPVs) have attracted

Douglas, Jessica D.

2013-01-01T23:59:59.000Z

88

INFOGRAPHIC: Wide Bandgap Semiconductors  

Office of Energy Efficiency and Renewable Energy (EERE)

Breakthrough material technology called wide bandgap (WBG) semiconductors can help reduce the amount of wasted heat, boost energy efficiency, improve reliability, reduce cost, and decrease system size in existing and future power electronics.

89

Ferromagnetism in Oxide Semiconductors  

SciTech Connect

In order to become a practical technology, semiconductor spintronics requires the discovery and utilization of ferromagnetic semiconductors which exhibit spin polarization in the majority carrier band at and above room temperature. Intrinsic remanent magnetization would allow spin polarized currents to be propagated in such materials without the need for a continuous magnetic field. However, the discovery and understanding of such materials is proving to be a grand challenge in solid-state science. Indeed, one of the 125 critical unanswered scientific questions recently posed in Science magazine asks, “Is it possible to create magnetic semiconductors that work at room temperature?”

Chambers, Scott A.; Droubay, Timothy C.; Wang, Chong M.; Rosso, Kevin M.; Heald, Steve M.; Schwartz, S. A.; Kittilstved, Kevin R.; Gamelin, Daniel R.

2006-11-01T23:59:59.000Z

90

A high liquid yield process for retorting various organic materials including oil shale  

DOE Patents (OSTI)

This invention is a continuous retorting process for various high molecular weight organic materials, including oil shale, that yields an enhanced output of liquid product. The organic material, mineral matter, and an acidic catalyst, that appreciably adsorbs alkenes on surface sites at prescribed temperatures, are mixed and introduced into a pyrolyzer. A circulating stream of olefin enriched pyrolysis gas is continuously swept through the organic material and catalyst, whereupon, as the result of pyrolysis, the enhanced liquid product output is provided. Mixed spent organic material, mineral matter, and cool catalyst are continuously withdrawn from the pyrolyzer. Combustion of the spent organic material and mineral matter serves to reheat the catalyst. Olefin depleted pyrolysis gas, from the pyrolyzer, is enriched in olefins and recycled into the pyrolyzer. The reheated acidic catalyst is separated from the mineral matter and again mixed with fresh organic material, to maintain the continuously cyclic process. 2 figs.

Coburn, T.T.

1988-07-26T23:59:59.000Z

91

High liquid yield process for retorting various organic materials including oil shale  

DOE Patents (OSTI)

This invention is a continuous retorting process for various high molecular weight organic materials, including oil shale, that yields an enhanced output of liquid product. The organic material, mineral matter, and an acidic catalyst, that appreciably adsorbs alkenes on surface sites at prescribed temperatures, are mixed and introduced into a pyrolyzer. A circulating stream of olefin enriched pyrolysis gas is continuously swept through the organic material and catalyst, whereupon, as the result of pyrolysis, the enhanced liquid product output is provided. Mixed spent organic material, mineral matter, and cool catalyst are continuously withdrawn from the pyrolyzer. Combustion of the spent organic material and mineral matter serves to reheat the catalyst. Olefin depleted pyrolysis gas, from the pyrolyzer, is enriched in olefins and recycled into the pyrolyzer. The reheated acidic catalyst is separated from the mineral matter and again mixed with fresh organic material, to maintain the continuously cyclic process.

Coburn, Thomas T. (Livermore, CA)

1990-01-01T23:59:59.000Z

92

Organic Solar Cells and Their Nanostructural Improvement  

Science Journals Connector (OSTI)

Organic solar cells comprised of organic semiconductors have attracted considerable attention in the ... photonics and electronics during the last decade. Organic semiconductors are a less expensive alternative t...

Serap Günes

2011-01-01T23:59:59.000Z

93

Time-resolved THz studies of carrier dynamics in semiconductors, superconductors, and strongly-correlated electron materials  

SciTech Connect

Perhaps the most important aspect of contemporary condensed matter physics involves understanding strong Coulomb interactions between the large number of electrons in a solid. Electronic correlations lead to the emergence of new system properties, such as metal-insulator transitions, superconductivity, magneto-resistance, Bose-Einstein condensation, the formation of excitonic gases, or the integer and fractional Quantum Hall effects. The discovery of high-Tc superconductivity in particular was a watershed event, leading to dramatic experimental and theoretical advances in the field of correlated-electron systems. Such materials often exhibit competition between the charge, lattice, spin, and orbital degrees of freedom, whose cause-effect relationships are difficult to ascertain. Experimental insight into the properties of solids is traditionally obtained by time-averaged probes, which measure e.g., linear optical spectra, electrical conduction properties, or the occupied band structure in thermal equilibrium. Many novel physical properties arise from excitations out of the ground state into energetically higher states by thermal, optical, or electrical means. This leads to fundamental interactions between the system's constituents, such as electron-phonon and electron-electron interactions, which occur on ultrafast timescales. While these interactions underlie the physical properties of solids, they are often only indirectly inferred from time-averaged measurements. Time-resolved spectroscopy, consequently, is playing an ever increasing role to provide insight into light-matter interaction, microscopic processes, or cause-effect relationships that determine the physics of complex materials. In the past, experiments using visible and near-infrared femtosecond pulses have been extensively employed, e.g. to follow relaxation and dephasing processes in metals and semiconductors. However, many basic excitations in strongly-correlated electron systems and nanoscale materials occur at lower energies. The terahertz (THz) regime is particularly rich in such fundamental resonances. This includes ubiquitous lattice vibrations and low-energy collective oscillations of conduction charges. In nanoscale materials, band structure quantization also yields novel infrared and THz transitions, including intersubband absorption in quantum wells. The formation of excitons in turn leads to low-energy excitations analogous to inter-level transitions in atoms. In transition-metal oxides, fundamental excitation gaps arise from charge pairing into superconducting condensates and other correlated states. This motivates the use of ultrafast THz spectroscopy as a powerful tool to study light-matter interactions and microscopic processes in nanoscale and correlated-electron materials.A distinct advantage of coherent THz pulses is that the amplitude and phase of the electric field can be measured directly, as the THz fields are coherent with the fs pulses from which they are generated. Using THz time-domain spectroscopy (THz-TDS), both the real and imaginary parts of the response functions (such as the dielectric function) are obtained directly without the need for Kramers?Kronig transforms. The THz response can also be expressed in terms of absorption and refractive index, or as the optical conductivity. The optical conductivity describes the current response of a many-body system to an electric field, an ideal tool to study conducting systems. A second important advantage is the ultrafast time resolution that results from the short temporal duration of the THz time-domain sources. In particular, optical-pump THz-probe spectroscopy enables a delicate probe of the transient THz conductivity after optical photoexcitation. These experiments can provide insight into quasiparticle interactions, phase transitions, or nonequilibrium dynamics. In this chapter we will provide many such examples. Since THz spectroscopy of solids is a quickly expanding field

Kaindl, Robert A.; Averitt, Richard D.

2006-11-14T23:59:59.000Z

94

Definition: Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Semiconductor Jump to: navigation, search Dictionary.png Semiconductor Any material that has a limited capacity for conducting an electric current. Certain semiconductors, including silicon, gallium arsenide, copper indium diselenide, and cadmium telluride, are uniquely suited to the photovoltaic conversion process.[1] View on Wikipedia Wikipedia Definition A semiconductor is a material which has electrical conductivity to a degree between that of a metal (such as copper) and that of an insulator (such as glass). Semiconductors are the foundation of modern solid state electronics, including transistors, solar cells, light-emitting diodes (LEDs), quantum dots and digital and analog integrated circuits. A semiconductor may have a number of unique properties, one of which is the

95

Spectroscopy of semiconductor materials  

NLE Websites -- All DOE Office Websites (Extended Search)

(CuAg) 3 VO 4 compounds and theoretically predicted that hole producers (CuAg- vacancies) will dominate hole killers (CuAg interstitials, O vacancies). We synthesized Cu 3...

96

Polymer and carbon nanotube materials for chemical sensors and organic electronics  

E-Print Network (OSTI)

This thesis details the development of new materials for high-performance chemical sensing as well as organic electronic applications. In Chapter 2, we develop a chemiresistive material based on single-walled carbon nanotubes ...

Wang, Fei, Ph. D. Massachusetts Institute of Technology

2010-01-01T23:59:59.000Z

97

Graphene-based functional materials for organic solar cells [Invited  

Science Journals Connector (OSTI)

Graphene is of great interest for future applications in organic photovoltaics (OPVs) due to its high three-dimensional aspect ratio, large specific surface area, remarkable optical...

Pan, Zhe; Gu, Huili; Wu, Meng-Ting; Li, Yongxi; Chen, Yu

2012-01-01T23:59:59.000Z

98

Process for producing chalcogenide semiconductors  

DOE Patents (OSTI)

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Noufi, R.; Chen, Y.W.

1985-04-30T23:59:59.000Z

99

Variable temperature semiconductor film deposition  

DOE Patents (OSTI)

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Li, X.; Sheldon, P.

1998-01-27T23:59:59.000Z

100

Viscosity of -pinene secondary organic material and implications for particle growth and reactivity  

E-Print Network (OSTI)

Viscosity of -pinene secondary organic material and implications for particle growth and reactivity of secondary organic material (SOM) are abun- dant in the lower troposphere. The viscosity of these particles-mobility" technique and a "poke-flow" technique, in conjunction with simulations of fluid flow, the viscosity

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Metal-organic frameworks—New materials for hydrogen storage  

Science Journals Connector (OSTI)

Published data on the physical sorption of hydrogen by new materials with a large specific ... (MOFs), are systematized and analyzed. The hydrogen-accumulating properties of MOFs are compared with ... and nanocar...

V. I. Isaeva; L. M. Kustov

2007-04-01T23:59:59.000Z

102

Methods for associating or dissociating guest materials with a metal organic framework, systems for associating or dissociating guest materials within a series of metal organic frameworks, thermal energy transfer assemblies, and methods for transferring thermal energy  

DOE Patents (OSTI)

Methods for releasing associated guest materials from a metal organic framework are provided. Methods for associating guest materials with a metal organic framework are also provided. Methods are provided for selectively associating or dissociating guest materials with a metal organic framework. Systems for associating or dissociating guest materials within a series of metal organic frameworks are provided. Thermal energy transfer assemblies are provided. Methods for transferring thermal energy are also provided.

McGrail, B. Peter; Brown, Daryl R.; Thallapally, Praveen K.

2014-08-05T23:59:59.000Z

103

Nitric-phosphoric acid oxidation of organic waste materials  

SciTech Connect

A wet chemical oxidation technology has been developed to address issues facing defense-related facilities, private industry, and small-volume generators such as university and medical laboratories. Initially tested to destroy and decontaminate a heterogenous mixture of radioactive-contaminated solid waste, the technology can also remediate other hazardous waste forms. The process, unique to Savannah River, offers a valuable alternative to incineration and other high-temperature or high-pressure oxidation processes. The process uses nitric acid in phosphoric acid; phosphoric acid allows nitric acid to be retained in solution well above its normal boiling point. The reaction converts organics to carbon dioxide and water, and generates NO{sub x} vapors which can be recycled using air and water. Oxidation is complete in one to three hours. In previous studies, many organic compounds were completely oxidized, within experimental error, at atmospheric pressure below 180{degrees}C; more stable compounds were decomposed at 200{degrees}C and 170 kPa. Recent studies have evaluated processing parameters and potential throughputs for three primary compounds: EDTA, polyethylene, and cellulose. The study of polyvinylchloride oxidation is incomplete at this time.

Pierce, R.A.; Smith, J.R.

1995-11-01T23:59:59.000Z

104

Thermal conductivity enhancement of Ag nanowires on an organic phase change material  

Science Journals Connector (OSTI)

One of the greatest challenges in the application of organic phase change materials (PCMs) is to increase their thermal conductivity while maintaining high phase change enthalpy. 1-Tetradecanol/Ag nanowires compo...

J. L. Zeng; Z. Cao; D. W. Yang; L. X. Sun…

2010-07-01T23:59:59.000Z

105

Purchasing and Materials Management Organization, Sandia National Laboratories annual report, fiscal year 1993  

SciTech Connect

This report summarizes the purchasing and transportation activities of the Purchasing and Materials Management Organization for Fiscal Year 1993. Activities for both the New Mexico and California locations are included.

Martin, D.R.

1994-02-01T23:59:59.000Z

106

Material nanosizing effect on living organisms: non-specific, biointeractive, physical size effects  

Science Journals Connector (OSTI)

...Introduction 1.1 Nanotechnology and biological organisms The development of nanotechnology has a large influence...investigated in biology and medicine. For materials...Graduate School of Dental Medicine, Hokkaido University...Nanostructures chemistry Nanotechnology Nanotubes, Carbon...

2009-01-01T23:59:59.000Z

107

Thermal instabilities of organic carbonates with discharged cathode materials in lithium-ion batteries  

Science Journals Connector (OSTI)

Thermal instability of lithiated cathode materials with organic...4, LiMn2O4, and LiCoO2...were mixed with diethyl carbonate, dimethyl carbonate, ethylene carbonate, ethyl methyl carbonate, and propylene carbonat...

Wei-Jie Ou; Chen-Shan Kao; Yih-Shing Duh…

2014-06-01T23:59:59.000Z

108

Panoramic View of Electrochemical Pseudocapacitor and Organic Solar Cell Research in Molecularly Engineered Energy Materials (MEEM)  

Science Journals Connector (OSTI)

Panoramic View of Electrochemical Pseudocapacitor and Organic Solar Cell Research in Molecularly Engineered Energy Materials (MEEM) ... His research group is engaged in a wide range of interdisciplinary research projects at the intersection between interfacial and transport phenomena, material science, and biology for sustainable energy conversion, storage, and efficiency technologies. ... Of these, carbon capture was phased out in the early stages of the project to concentrate available resources on the electrochemical pseudocapacitor and organic solar cell themes. ...

Jordan C. Aguirre; Amy Ferreira; Hong Ding; Samson A. Jenekhe; Nikos Kopidakis; Mark Asta; Laurent Pilon; Yves Rubin; Sarah H. Tolbert; Benjamin J. Schwartz; Bruce Dunn; Vidvuds Ozolins

2014-07-09T23:59:59.000Z

109

Microporous Metal Organic Materials: Promising Candidates as Sorbents for Hydrogen Storage  

E-Print Network (OSTI)

Microporous Metal Organic Materials: Promising Candidates as Sorbents for Hydrogen Storage Long Pan coordination structures represent a promising new entry to the field of hydrogen storage materials.2 To fully that effectively store hydrogen are needed for use in fuel cell powered vehicles. Among the various candidate

Li, Jing

110

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents (OSTI)

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2001-01-01T23:59:59.000Z

111

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents (OSTI)

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2002-01-01T23:59:59.000Z

112

Semiconductor-based optical refrigerator  

DOE Patents (OSTI)

Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

Epstein, Richard I. (Santa Fe, NM); Edwards, Bradley C. (Nekoosa, WI); Sheik-Bahae, Mansoor (Albuquerque, NM)

2002-01-01T23:59:59.000Z

113

Voltage Gain in Lithiated Enolate-Based Organic Cathode Materials by Isomeric Effect  

Science Journals Connector (OSTI)

Voltage Gain in Lithiated Enolate-Based Organic Cathode Materials by Isomeric Effect ... For a long time, this class of redox-active materials has been disregarded mainly due to stability issues but, in recent years, progress has been made demonstrating that organics undeniably exhibit considerable assets. ... In practice, dilithium (2,3-dilithium-oxy)-terephthalate compound (Li4C8H2O6) was first produced through an eco-friendly synthesis scheme based on CO2 sequestration, then characterized, and finally tested electrochemically as lithiated cathode material vs. Li. ...

Sébastien Gottis; Anne-Lise Barrès; Franck Dolhem; Philippe Poizot

2014-03-04T23:59:59.000Z

114

Humic and fluvic acids and organic colloidal materials in the environment  

SciTech Connect

Humic substances are ubiquitous in the environment, occurring in all soils, waters, and sediments of the ecosphere. Humic substances arise from the decomposition of plant and animal tissues yet are more stable than their precursors. Their size, molecular weight, elemental composition, structure, and the number and position of functional groups vary, depending on the origin and age of the material. Humic and fulvic substances have been studied extensively for more than 200 years; however, much remains unknown regarding their structure and properties. Humic substances are those organic compounds found in the environment that cannot be classified as any other chemical class of compounds. They are traditionally defined according to their solubilities. Fulvic acids are those organic materials that are soluble in water at all pH values. Humic acids are those materials that are insoluble at acidic pH values (pH < 2) but are soluble at higher pH values. Humin is the fraction of natural organic materials that is insoluble in water at all pH values. These definitions reflect the traditional methods for separating the different fractions from the original mixture. The humic content of soils varies from 0 to almost 10%. In surface waters, the humic content, expressed as dissolved organic carbon (DOC), varies from 0.1 to 50 ppm in dark-water swamps. In ocean waters, the DOC varies from 0.5 to 1.2 ppm at the surface, and the DOC in samples from deep groundwaters varies from 0.1 to 10 ppm. In addition, about 10% of the DOC in surface waters is found in suspended matter, either as organic or organically coated inorganic particulates. Humic materials function as surfactants, with the ability to bind both hydrophobic and hydrophyllic materials, making numic and fluvic materials effective agents in transporting both organic and inorganic contaminants in the environment.

Gaffney, J.S.; Marley, N.A. [Argonne National Lab., IL (United States); Clark, S.B. [Univ. of Georgia, Aiken, SC (United States)

1996-04-01T23:59:59.000Z

115

Measurement and control of exciton spin in organic light emitting devices  

E-Print Network (OSTI)

Organic semiconductors are a promising new material set for electronic and optoelectronic devices. Their properties can be precisely controlled through chemistry, and they are well-suited for large-area, flexible, and ...

Segal, Michael, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

116

Sandia National Labs: PCNSC: Research: Compound Semiconductor...  

NLE Websites -- All DOE Office Websites (Extended Search)

and chemistry foundations to advance the state-of-the-art compound semiconductor optoelectronic materials and devices. Our approach is based on a focused effort including...

117

Controlled growth of larger heterojunction interface area for organic photosensitive devices  

DOE Patents (OSTI)

An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.

Yang, Fan (Somerset, NJ); Forrest, Stephen R. (Ann Arbor, MI)

2009-12-29T23:59:59.000Z

118

Bio-Enabled Materials Certain living organisms are remarkably adept at generating materials in complex, three-  

E-Print Network (OSTI)

-enabled materials research efforts affecting the grand challenge topical areas of Energy, Sustainability, Security sophistication and diversity of biogenic structures, coupled with the low-energy, sustainable, and often with a greater range of chemistries than are found in biogenic structures, the integration of biological

Li, Mo

119

Method for the catalytic conversion of organic materials into a product gas  

DOE Patents (OSTI)

A method for converting organic material into a product gas includes: (a) providing a liquid reactant mixture containing liquid water and liquid organic material within a pressure reactor; (b) providing an effective amount of a reduced metal catalyst selected from the group consisting of ruthenium, rhodium, osmium and iridium or mixtures thereof within the pressure reactor; and (c) maintaining the liquid reactant mixture and effective amount of reduced metal catalyst in the pressure reactor at temperature and pressure conditions of from about 300 C to about 450 C; and at least 130 atmospheres for a period of time, the temperature and pressure conditions being effective to maintain the reactant mixture substantially as liquid, the effective amount of reduced metal catalyst and the period of time being sufficient to catalyze a reaction of the liquid organic material to produce a product gas composed primarily of methane, carbon dioxide and hydrogen. 5 figs.

Elliott, D.C.; Sealock, L.J. Jr.; Baker, E.G.

1997-04-01T23:59:59.000Z

120

Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical  

E-Print Network (OSTI)

rf plasma-assisted metalorganic chemical vapor deposition G. C. Chen, D.-C. Lim, S.-B. Lee, and J-derived plasma-assisted metalorganic chemical vapor deposition MOCVD , and have studied the electrical compounds have become promising functional materials for integrated circuits, flash memories, and solar

Boo, Jin-Hyo

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

materials analysis of inorganic, organic, and bioma-terials. See ELECTRON MICROSCOPE.  

E-Print Network (OSTI)

28 Plaster materials analysis of inorganic, organic, and bioma- terials. See ELECTRON MICROSCOPE: The next chip-scale technology, Mater. Today, 9:20­27, 2006. Plaster A plastic mixture of solids and water plaster is also used in the industry to designate plaster of paris. Plaster is usually applied in one

Anderson, Peter M.

122

Micropore Characterization of Mesocellular Foam and Hybrid Organic Functional Mesocellular Foam Materials  

Science Journals Connector (OSTI)

Micropore Characterization of Mesocellular Foam and Hybrid Organic Functional Mesocellular Foam Materials ... The authors acknowledge the Australian Research Council (ARC) for the support of ARC Discovery Grant DP0451387 and access to infrastructure from the Particulate Fluids Processing Centre, a Special Research Centre of the ARC. ...

Sasha Boskovic; Anita J. Hill; Terry W. Turney; Geoffrey W. Stevens; Michelle L. Gee; Andrea J. O’Connor

2009-12-01T23:59:59.000Z

123

Organic solvent-free water-developable sugar resist material derived from biomass in green lithography  

Science Journals Connector (OSTI)

Abstract We have demonstrated an organic solvent-free water-developable branched sugar resist material derived from biomass for its use in green electron beam lithography. This emphasizes the use of plant products instead of conventionally used tetramethylammonium hydroxide and organic solvents. The rationally designed water-developable branched sugar resist material developed in this study can be patterned with an excellent sensitivity of 7 ?C/cm2 and a resolution of 50–200 nm lines. In addition, it indicated sufficient thermal stability at ?180 °C, acceptable CF4 etch selectivity with a hardmask material, 42–53% rate of chemical reaction of acryloyl groups affected by the tacticity of branched sugar chain polymers, and developable in pure water at 23 °C for 60 s.

Satoshi Takei; Akihiro Oshima; Takumi Ichikawa; Atsushi Sekiguchi; Miki Kashiwakura; Takahiro Kozawa; Seiichi Tagawa; Tomoko G. Oyama; Syoji Ito; Hiroshi Miyasaka

2014-01-01T23:59:59.000Z

124

ADVERTISEMENT SEMICONDUCTORS  

E-Print Network (OSTI)

ADVERTISEMENT SEMICONDUCTORS: 07.14.2010 Nano-enabled Coating Makes Aircraft Invisible Humble paint... The oil-separating centrifuges will work, but they... MORE FROM IEEE SPECTRUM ROBOTICS: 06.16.2010 Robo.01.2006 Look Out, Beckham: Here Come the Robots At the "World Cup" for robots, the talk is that one day

Stryk, Oskar von

125

Methods of chemical analysis for organic waste constituents in radioactive materials: A literature review  

SciTech Connect

Most of the waste generated during the production of defense materials at Hanford is presently stored in 177 underground tanks. Because of the many waste treatment processes used at Hanford, the operations conducted to move and consolidate the waste, and the long-term storage conditions at elevated temperatures and radiolytic conditions, little is known about most of the organic constituents in the tanks. Organics are a factor in the production of hydrogen from storage tank 101-SY and represent an unresolved safety question in the case of tanks containing high organic carbon content. In preparation for activities that will lead to the characterization of organic components in Hanford waste storage tanks, a thorough search of the literature has been conducted to identify those procedures that have been found useful for identifying and quantifying organic components in radioactive matrices. The information is to be used in the planning of method development activities needed to characterize the organics in tank wastes and will prevent duplication of effort in the development of needed methods.

Clauss, S.A.; Bean, R.M.

1993-02-01T23:59:59.000Z

126

Peter Y. Yu, Manuel Cardona, Fundamentals of semiconductors; physics and materials properties, 3rd rev. and enlarged edn. (Advanced texts in physics).  

Science Journals Connector (OSTI)

Most of us consider semiconductors as a very technical subject, thinking of computer chips and all the electronic equipment in the lab and at home. ... some elaborate etching and deposition processes, but "Fundamentals

Walter Langel

2003-10-01T23:59:59.000Z

127

Stretchable semiconductor elements and stretchable electrical circuits  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Menard, Etienne (Durham, NC)

2009-07-07T23:59:59.000Z

128

Development and Utilization of Host Materials for White Phosphorescent Organic Light-Emitting Diodes  

SciTech Connect

Our project was primarily focused on the MYPP 2015 goal for white phosphorescent organic devices (PhOLEDs or phosphorescent organic light-emitting diodes) for solid-state lighting with long lifetimes and high efficiencies. Our central activity was to synthesize and evaluate a new class of host materials for blue phosphors in the PhOLEDs, known to be a weak link in the device operating lifetime. The work was a collaborative effort between three groups, one primarily responsible for chemical design and characterization (Chen), one primarily responsible for device development (Tang) and one primarily responsible for mechanistic studies and degradation analysis (Rothberg). The host materials were designed with a novel architecture that chemically links groups with good ability to move electrons with those having good ability to move “holes” (positive charges), the main premise being that we could suppress the instability associated with physical separation and crystallization of the electron conducting and hole conducting materials that might cause the devices to fail. We found that these materials do prevent crystallization and that this will increase device lifetimes but that efficiencies were reduced substantially due to interactions between the materials creating new low energy “charge transfer” states that are non-luminescent. Therefore, while our proposed strategy could in principle improve device lifetimes, we were unable to find a materials combination where the efficiency was not substantially compromised. In the course of our project, we made several important contributions that are peripherally related to the main project goal. First, we were able to prepare the proposed new family of materials and develop synthetic routes to make them efficiently. These types of materials that can transport both electrons and holes may yet have important roles to play in organic device technology. Second we developed an important new method for controlling the deposition profile of material so that arbitrary concentration gradients can be implemented in layers with mixed composition. These concentration profiles are known to increase device efficiency and longevity and we confirmed that experimentally. Third, we investigated a new method for analyzing degradation in devices using mass spectrometry to look for degradation products. We showed that these methods are not simple to interpret unambiguously and need to be used with caution.

Tang, Ching; Chen, Shaw

2013-05-31T23:59:59.000Z

129

Neural network system and methods for analysis of organic materials and structures using spectral data  

DOE Patents (OSTI)

Apparatus and processes are described for recognizing and identifying materials. Characteristic spectra are obtained for the materials via spectroscopy techniques including nuclear magnetic resonance spectroscopy, infrared absorption analysis, x-ray analysis, mass spectroscopy and gas chromatography. Desired portions of the spectra may be selected and then placed in proper form and format for presentation to a number of input layer neurons in an offline neural network. The network is first trained according to a predetermined training process; it may then be employed to identify particular materials. Such apparatus and processes are particularly useful for recognizing and identifying organic compounds such as complex carbohydrates, whose spectra conventionally require a high level of training and many hours of hard work to identify, and are frequently indistinguishable from one another by human interpretation.

Meyer, B.J.; Sellers, J.P.; Thomsen, J.U.

1993-06-08T23:59:59.000Z

130

Megahertz organic/polymer diodes  

DOE Patents (OSTI)

Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

2012-12-11T23:59:59.000Z

131

Preparation of a semiconductor thin film  

DOE Patents (OSTI)

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

132

Preparation of a semiconductor thin film  

DOE Patents (OSTI)

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

1998-01-27T23:59:59.000Z

133

Nanomaterials for Energy and Electronics Materials Science  

E-Print Network (OSTI)

crystalline silicon solar cells suffer from both high materials costs and energy-intensive production-sensitized solar cells (DSCs) based on oxide semiconductors and organic dyes have recently emerged as a promising Synthesis of ZnO Aggregates and Their Application in Dye-sensitized Solar Cells Nanomaterials for Energy

Cao, Guozhong

134

Volatile tritiated organic acids in stack effluents and in air surrounding contaminated materials  

SciTech Connect

A small fraction of the tritium released into the atmosphere from tritium-handling or solid waste storage facilities was shown to be in the form of volatile organic acids. The same compounds were also found, but at a much higher proportion, in the tritium evolved at room temperature from highly contaminated materials placed under air atmospheres. This might be due to the oxidation and labeling of hydrocarbon(s) by mechanisms that are presumably of a radiolytic nature. The new forms could have an impact on operational requirements and waste management strategies within a tritium facility and a fusion reactor hall. Further data are needed to assess the related doses.

Belot, Y.; Camus, H.; Marini, T.; Raviart, S. (Institut de Protection et de Surete Nucleaire (France))

1993-06-01T23:59:59.000Z

135

Influence of substrate refractive index and antireflection coating on excitons generation in organic solar cell  

Science Journals Connector (OSTI)

Solar cells are manufactured with the application of inorganic semiconductors and with the application of organic semiconductors. Organic solar cells have presently lower efficiency than their inorganic...2010).

Ewa Gondek

2014-01-01T23:59:59.000Z

136

Introduction to Organic Solar Cells  

Science Journals Connector (OSTI)

Organic solar cells (OSCs) have attracted strong attention in ... the basics of OSCs. The basics of organic semiconductors are first described. We then provide...

Dixon D. S. Fung; Wallace C. H. Choy

2013-01-01T23:59:59.000Z

137

Semiconductor wire array structures, and solar cells and photodetectors based on such structures  

DOE Patents (OSTI)

A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

2014-08-19T23:59:59.000Z

138

Activated carbon aerogel as electrode material for coin-type EDLC cell in organic electrolyte  

Science Journals Connector (OSTI)

Abstract Carbon aerogel (CA) was prepared by a carbonization of resorcinol–formaldehyde (RF) polymer gels, and it was chemically activated with KOH to obtain activated carbon aerogel (ACA) for electrode material for EDLC in organic electrolyte. Coin-type EDLC cells with two symmetrical carbon electrode were assembled using the prepared carbon materials. Electrochemical performance of the carbon electrodes was measured by galvanostatic charge/discharge and cyclic voltammetry methods. Activated carbon aerogel (20.9 F/g) showed much higher specific capacitance than carbon aerogel (7.9 F/g) and commercial activated carbon (8.5 F/g) at a scan rate of 100 mV/s. This indicates that chemical activation with KOH served as an efficient method to improve electrochemical performance of carbon aerogel for EDLC electrode in organic electrolyte. The enhanced electrochemical performance of activated carbon aerogel was attributed to the high effective surface area and the well-developed pore structure with appropriate pore size obtained from activation with KOH.

Soon Hyung Kwon; Eunji Lee; Bum-Soo Kim; Sang-Gil Kim; Byung-Jun Lee; Myung-Soo Kim; Ji Chul Jung

2014-01-01T23:59:59.000Z

139

Wide Bandgap Semiconductors: Pursuing the Promise  

Energy.gov (U.S. Department of Energy (DOE))

Wide bandgap semiconductor materials are more efficient than their silicon-based counterparts; making it possible to reduce weight, volume, and life-cycle costs in a wide range of power applications.

140

Semiconductor research capabilities at the Lawrence Berkeley Laboratory  

SciTech Connect

This document discusses semiconductor research capabilities (advanced materials, processing, packaging) and national user facilities (electron microscopy, heavy-ion accelerators, advanced light source). (DLC)

Not Available

1987-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Holey Germanium - New Routes to Ordered Nanoporous Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

currently exploring a variety of applications for these materials, including nanoscale solar cells and adsorption based chemical sensors. Because the semiconductor surface is...

142

Photons, Electrons and Holes: Fundamentals of Photocatalysis with Semiconductors  

Science Journals Connector (OSTI)

Although not all the heterogeneous photocatalysts are semiconductors, this type of solids represents, by far, the most representative and widely investigated photoactive materials. For that reason, the fundamentals

Juan Manuel Coronado

2013-01-01T23:59:59.000Z

143

Photocatalysis Using Semiconductor Nanoclusters  

SciTech Connect

We report on experiments using nanosize MoS{sub 2} to photo-oxidize organic pollutants in water using visible light as the energy source. We have demonstrated that we can vary the redox potentials and absorbance characteristics of these small semiconductors by adjusting their size, and our studies of the photooxidation of organic molecules have revealed that the rate of oxidation increases with increasing bandgap (i.e. more positive valence band and more negative conduction band potentials). Because these photocatalysis reactions can be performed with the nanoclusters fully dispersed and stable in solution, liquid chromatography can be used to determine both the intermediate reaction products and the state of the nanoclusters during the reaction. We have demonstrated that the MoS{sub 2} nanoclusters remain unchanged during the photooxidation process by this technique. We also report on studies of MoS{sub 2} nanoclusters deposited on TiO{sub 2} powder.

Thurston, T.R.; Wilcoxon,J.P.

1999-01-21T23:59:59.000Z

144

E-Print Network 3.0 - advanced semiconductor devices Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Northern Illinois University Collection: Engineering 39 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

145

Optical temperature indicator using thermochromic semiconductors  

DOE Patents (OSTI)

A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

Kronberg, J.W.

1995-01-01T23:59:59.000Z

146

Details in Semiconductors Gordon Conference, New London, NH, August 3-8, 2008  

SciTech Connect

Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in homogeneous and structured semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, with an increases emphasis on nanostructures as compared to previous conferences. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference deals with defects in a broad range of bulk and nanoscale electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and organic semiconductors. Presentations of state-of-the-art theoretical methods will contribute to a fundamental understanding of atomic-scale phenomena. The program consists of about twenty invited talks, with plenty of discussion time, and a number of contributed poster sessions. Because of the large amount of discussion time, the conference provides an ideal forum for dealing with topics that are new and/or controversial.

Shengbai Zhang and Nancy Ryan Gray

2009-09-16T23:59:59.000Z

147

Carbazole modified terphenyl based high triplet energy host materials for blue phosphorescent organic light-emitting diodes  

Science Journals Connector (OSTI)

Abstract Carbazole modified terphenyl based high triplet energy host materials were developed for application as host materials for blue phosphorescent organic light-emitting diodes. Two terphenyl based materials, 9-(5?-phenyl-[1,1?:2?,1?:3?,1???-quaterphenyl]-3-yl)-9H-carbazole (CzTPPh) and 9-(3?,5?-di(pyridin-3-yl)-[1,1:2?,1?-terphenyl]-3-yl)-9H-carbazole (CzTPPy), were synthesized as the host materials with high triplet energies of 2.75 eV and 2.73 eV, respectively. The two host materials were evaluated as the host materials for blue phosphorescent organic light-emitting diodes and high quantum efficiencies of 20.2% and 15.7% were obtained in the CzTPPh and CzTPPy devices, respectively.

Chil Won Lee; Jun Yeob Lee

2014-01-01T23:59:59.000Z

148

Waste minimization in semiconductor processing  

SciTech Connect

The US semiconductor industry uses 5--7 thousand pounds of arsine annually. Fifty to eighty percent of the arsine used becomes a waste product, which requires abatement. Traditional methods of abatement are reviewed with an emphasis on dry chemical scrubbing. A variety of dry chemical scrubbing materials were evaluated for arsine capacity, using activated carbon as the baseline for comparison. Of the available technologies, dry chemical scrubbing is the most effective means of minimizing arsenic containing waste generated from semiconductor effluents. A copper oxide based media has been identified which has high capacity, high efficiency and treats the spectrum of gases used in MOCVD processes. Reclaim and recovery of spent scrubber media has the potential to drastically reduce arsenic waste from semiconductor manufacturing.

Hardwick, S.J.; Mailloux, J.C. [Novapure Corp., Danbury, CT (United States)

1994-12-31T23:59:59.000Z

149

Annual report: Purchasing and Materials Management Organization, Sandia National Laboratories, fiscal year 1992  

SciTech Connect

This report summarizes the purchasing and transportation activities of the Purchasing and Materials Management Organization for Fiscal Year 1992. Activities for both the New Mexico and California locations are included. Topics covered in this report include highlights for fiscal year 1992, personnel, procurements (small business procurements, disadvantaged business procurements, woman-owned business procurements, New Mexico commercial business procurements, Bay area commercial business procurements), commitments by states and foreign countries, and transportation activities. Also listed are the twenty-five commercial contractors receiving the largest dollar commitments, commercial contractors receiving commitments of $1,000 or more, integrated contractor and federal agency commitments of $1,000 or more from Sandia National Laboratories/New Mexico and California, and transportation commitments of $1,000 or more from Sandia National Laboratories/New Mexico and California.

Zaeh, R.A.

1993-04-01T23:59:59.000Z

150

Nuclear magnetic resonance of laser-polarized noble gases in molecules, materials and organisms  

SciTech Connect

Conventional nuclear magnetic resonance (NMR) spectroscopy and magnetic resonance imaging (MRI) are fundamentally challenged by the insensitivity that stems from the ordinarily low spin polarization achievable in even the strongest NMR magnets. However, by transferring angular momentum from laser light to electronic and nuclear spins, optical pumping methods can increase the nuclear spin polarization of noble gases by several orders of magnitude, thereby greatly enhancing their NMR sensitivity. This dissertation is primarily concerned with the principles and practice of optically pumped nuclear magnetic resonance (OPNMR). The enormous sensitivity enhancement afforded by optical pumping noble gases can be exploited to permit a variety of novel NMR experiments across many disciplines. Many such experiments are reviewed, including the void-space imaging of organisms and materials, NMR and MRI of living tissues, probing structure and dynamics of molecules in solution and on surfaces, and zero-field NMR and MRI.

Goodson, Boyd M.

1999-12-01T23:59:59.000Z

151

X-ray photoelectron spectroscopy analysis of organic materials etched by charged water droplet impact  

SciTech Connect

Electrospray droplet impact (EDI) has been developed for matrix-free secondary ion mass spectrometry for surface analysis. When a target is etched by EDI, the physical etching on the target is suppressed to minimal, i.e., the occurrence of shallow surface etching. A novel approach to shallow surface etching of polystyrene (PS) by EDI was investigated. The charged water droplets were irradiated to a bulk and a spin coated PS. After irradiation, these samples were analyzed by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy. It was found that XPS spectra for PS were independent on the irradiation time by EDI. This indicates that EDI is a unique technique for the surface etching of the organic materials without leaving any damage on the etched surface.

Sakai, Yuji; Iijima, Yoshitoki; Takaishi, Riou; Asakawa, Daiki; Hiraoka, Kenzo [Clean Energy Research Center, University of Yamanashi, Takeda 4-3-11, Kofu 400-8511, Japan and Japan Science and Technology Agency Innovation Satellite, Shizuoka, 3-5-1 Johoku, Nakaku, Hamamatsu 432-8561 (Japan); Electron Optics Sales Division, JEOL Ltd., 2-8-3 Akebono, Tachikawa, Tokyo 190-0012 (Japan); Clean Energy Research Center, University of Yamanashi, Takeda 4-3-11, Kofu 400-8511 (Japan)

2009-07-15T23:59:59.000Z

152

Viscosity of ?-pinene secondary organic material and implications for particle growth and reactivity  

SciTech Connect

Particles composed of secondary organic material (SOM) are abundant in the lower troposphere and play important roles in climate, air quality, and health. The viscosity of these particles is a fundamental property that is presently poorly quantified for conditions relevant to the lower troposphere. Using two new techniques, namely a bead-mobility technique and a poke-flow technique, in conjunction with simulations of fluid flow, we measure the viscosity of the watersoluble component of SOM produced by ?-pinene ozonolysis. The viscosity is comparable to that of honey at 90% relative humidity (RH), comparable to that of peanut butter at 70% RH and greater than or comparable to that of bitumen for ? 30% RH, implying that the studied SOM ranges from liquid to semisolid/solid at ambient relative humidities. With the Stokes-Einstein relation, the measured viscosities further imply that the growth and evaporation of SOM by the exchange of organic molecules between the gas and condensed phases may be confined to the surface region when RH ? 30%, suggesting the importance of an adsorption-type mechanism for partitioning in this regime. By comparison, for RH ? 70% partitioning of organic molecules may effectively occur by an absorption mechanism throughout the bulk of the particle. Finally, the net uptake rates of semi-reactive atmospheric oxidants such as O3 are expected to decrease by two to five orders of magnitude for a change in RH from 90% to ? 30% RH, with possible implications for the rates of chemical aging of SOM particles in the atmosphere.

Renbaum-Wolff, Lindsay; Grayson, James W.; Bateman, Adam P.; Kuwata, Mikinori; Sellier, Mathieu; Murray, Benjamin J.; Shilling, John E.; Martin, Scot T.; Bertram, Allan K.

2013-05-14T23:59:59.000Z

153

Phosphine Oxide Based Electron Transporting and Hole Blocking Materials for Blue Electrophosphorescent Organic Light Emitting Devices  

SciTech Connect

We report the design, synthesis, thermal, and photophysical properties of two phosphine oxide based electron transport/hole blocking materials, 2,6-bis(4-(diphenylphosphoryl)phenyl)pyridine (BM-A11) and 2,4-bis(4-(diphenyl-phosphoryl)phenyl)pyridine (BM-A10) for blue electrophosphorescent organic light emitting devices (OLEDs). The use of these materials in blue OLED with iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,C2’]picolinate (Firpic) as the phosphor was demonstrated. Using the dual host device architecture with BM-A10 as the ETM yields a maximum EQE of 8.9% with a power efficiency of 21.5 lm/W (4.0V and 35 cd/m2). When BM-A11 is used as the ETM, the maximum EQE and power efficiency improves to 14.9% and 48.4 lm/W, respectively (3.0V and 40 cd/m2).

Von Ruden, Amber L.; Cosimbescu, Lelia; Polikarpov, Evgueni; Koech, Phillip K.; Swensen, James S.; Wang, Liang; Darsell, Jens T.; Padmaperuma, Asanga B.

2010-10-26T23:59:59.000Z

154

Optical temperature sensor using thermochromic semiconductors  

DOE Patents (OSTI)

Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

Kronberg, J.W.

1994-01-01T23:59:59.000Z

155

An indole derivative as a high triplet energy hole transport material for blue phosphorescent organic light-emitting diodes  

Science Journals Connector (OSTI)

Abstract A thermally stable high triplet energy material derived from an indoloacridine core and indole hole transport units, 8,8-bis(4-(1H-indol-1-yl)phenyl)-8H-indolo[3,2,1-de]acridine (BIPIA), was synthesized as the hole transport material for deep blue phosphorescent organic light-emitting diodes. The BIPIA hole transport material showed a high triplet energy of 2.95 eV and high glass transition temperature of 142 °C. A high quantum efficiency of 19.3% was obtained in the deep blue device using BIPIA as the high triplet energy hole transport material.

Min Su Park; Jun Yeob Lee

2013-01-01T23:59:59.000Z

156

Electrostatic screening by semiconductors  

E-Print Network (OSTI)

Electrostatic screening by semiconductors is studied, hics. applying the Thomas-Fermi theory. The semiconductor is treated as a medium with dielectric constant e due to vocalizable atoms, with force charge due to electrons. Two models...

Krcmar, Maja

2012-06-07T23:59:59.000Z

157

Semiconductor Nanowires for Energy Conversion Allon I. Hochbaum*,  

E-Print Network (OSTI)

Semiconductor Nanowires for Energy Conversion Allon I. Hochbaum*, and Peidong Yang* Department. Introduction: Role of Materials in Energy Conversion 527 2. Why Are Semiconductor Nanowires Special? 527 3 of Materials in Energy Conversion Between 2004 and 2030 the annual global consumption of energy is estimated

Wu, Zhigang

158

Study of the transport properties of organic semiconductors based on europium diphthalocyanine and bi-tris-phthalocyanine complexes with ortho-bis(oxymethyl)phenyl bridge and based on erbium and europium dinaphthalocyanine complexes  

SciTech Connect

The transport properties of organic semiconductors based on europium diphthalocyanine and bitris-phthalocyanine complexes with ortho-bis(oxymethyl)phenyl bridge and based on europium and erbium dinaphthalocyanine are studied. The temperature dependences of the dc conductivity for all types of the structures under study are obtained; it is shown that all dependences include two activation portions. For high-temperature portions, the activation energies are determined as 0.85 eV for europium diphthalocyanine with the ortho-bis(oxymethyl)phenyl bridge, 1.135 eV for europium bi-tris-phthalocyanine with the orthobis(oxymethyl)phenyl bridge, 0.98 eV for europium dinaphthalocyanine, and 1.18 eV for erbium dinaphthalocyanine. For the low-temperature activation portion, it is shown that lanthanide ions and their bond with a ligand make the dominant contribution to the conductivity of the structures under study.

Belogorokhov, I. A., E-mail: jugqwerty@mail.ru [State Research and Project Institute of Rare-Metal Industry GIREDMET (Russian Federation); Tikhonov, E. V. [Moscow State University (Russian Federation); Dronov, M. A. [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation); Ryabchikov, Yu. V. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Pashkova, N. V.; Kladova, E. I. [State Research and Project Institute of Rare-Metal Industry GIREDMET (Russian Federation); Belogorokhova, L. I.; Tomilova, L. G.; Khokhlov, D. R. [Moscow State University (Russian Federation)

2011-11-15T23:59:59.000Z

159

Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open Energy  

Open Energy Info (EERE)

Semiconductor formerly Bandwidth Semiconductor LLC Semiconductor formerly Bandwidth Semiconductor LLC Jump to: navigation, search Name Spire Semiconductor (formerly Bandwidth Semiconductor LLC) Place Hudson, New Hampshire Zip 3051 Product Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References Spire Semiconductor (formerly Bandwidth Semiconductor LLC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Spire Semiconductor (formerly Bandwidth Semiconductor LLC) is a company located in Hudson, New Hampshire . References ↑ "Spire Semiconductor (formerly Bandwidth Semiconductor LLC)" Retrieved from "http://en.openei.org/w/index.php?title=Spire_Semiconductor_formerly_Bandwidth_Semiconductor_LLC&oldid=351621"

160

Semiconductor radiation detector  

DOE Patents (OSTI)

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Bell, Zane W. (Oak Ridge, TN); Burger, Arnold (Knoxville, TN)

2010-03-30T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

2012 ELECTRONIC PROCESSES IN ORGANIC MATERIALS GORDON RESEARCH SEMINAR, JUNE 2-8, 2012  

SciTech Connect

This meeting focuses on the latest progress and challenges regarding organic electronics devices, artificial light-harvesting systems, and inorganic/organic hybrid nanoscale systems and especially on the synergy between these fields.

Eisele, Dorthe

2012-06-08T23:59:59.000Z

162

Resole resin products derived from fractionated organic and aqueous condensates made by fast-pyrolysis of biomass materials  

DOE Patents (OSTI)

A process for preparing phenol-formaldehyde resole resins by fractionating organic and aqueous condensates made by fast-pyrolysis of biomass materials while using a carrier gas to move feed into a reactor to produce phenolic-containing/neutrals in which portions of the phenol normally contained in said resins are replaced by a phenolic/neutral fractions extract obtained by fractionation.

Chum, Helena L. (8448 Allison Ct., Arvada, CO 80005); Black, Stuart K. (4976 Raleigh St., Denver, CO 80212); Diebold, James P. (57 N. Yank Way, Lakewood, CO 80228); Kreibich, Roland E. (4201 S. 344th, Auburn, WA 98001)

1993-01-01T23:59:59.000Z

163

Resole resin products derived from fractionated organic and aqueous condensates made by fast-pyrolysis of biomass materials  

DOE Patents (OSTI)

A process for preparing phenol-formaldehyde resole resins by fractionating organic and aqueous condensates made by fast-pyrolysis of biomass materials while using a carrier gas to move feed into a reactor to produce phenolic-containing/neutrals in which portions of the phenol normally contained in said resins are replaced by a phenolic/neutral fractions extract obtained by fractionation.

Chum, H.L.; Black, S.K.; Diebold, J.P.; Kreibich, R.E.

1993-08-10T23:59:59.000Z

164

Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors  

Science Journals Connector (OSTI)

In this chapter, it is first described how the surface science and engineering of the III–V compound semiconductors are relevant to developing the semiconductor-based materials, including bismuth (Bi) containi...

Pekka Laukkanen; Marko Punkkinen

2013-01-01T23:59:59.000Z

165

Life-cycle Assessment of Semiconductors  

E-Print Network (OSTI)

The international technology roadmap for semiconductors,The international technology roadmap for semiconductors:The international technology roadmap for semiconductors,

Boyd, Sarah B.

2009-01-01T23:59:59.000Z

166

Deposition method for producing silicon carbide high-temperature semiconductors  

DOE Patents (OSTI)

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

1987-01-01T23:59:59.000Z

167

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

2009-11-24T23:59:59.000Z

168

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2013-05-14T23:59:59.000Z

169

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04T23:59:59.000Z

170

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

2011-07-19T23:59:59.000Z

171

Analysis of Lateritic Material from Cerro Impacto by Instrumental Neutron Activation Employing a Low-Energy Photon Semiconductor and a High-Energy Ge(Li) Detector  

Science Journals Connector (OSTI)

Nineteen elements were determined in four different grain size fractions of a bulk geological material from Cerro Impacto for a study of the physical (mechanical) concentration...

Labrecque, J J; Beusen, J M; Van Grieken, R E

1986-01-01T23:59:59.000Z

172

Optimization of material composition and processing parameters for hybrid organic-inorganic solar cells.  

E-Print Network (OSTI)

??The widespread adoption of hybrid organic-inorganic solar cells has been delayed by low performance. Improving performance requires a firm understanding of how to optimize both… (more)

Salpeter, Garrett Morgan

2011-01-01T23:59:59.000Z

173

Carbon nanotubes for organic electronics.  

E-Print Network (OSTI)

??This thesis investigated the use of carbon nanotubes as active components in solution processible organic semiconductor devices. We investigated the use of functionalized carbon nanotubes… (more)

Goh, Roland Ghim Siong

2008-01-01T23:59:59.000Z

174

Thermal study of organic electrolytes with fully charged cathodic materials of lithium-ion batteries  

Science Journals Connector (OSTI)

We systematically investigated thermal effects of organic electrolytes/organic solvents with...0.5CoO2) of Li-ion battery under rupture conditions by using oxygen bomb...3O4, CoO, and LiCoO2 were the main solid p...

Qian Huang; Manming Yan; Zhiyu Jiang

2008-06-01T23:59:59.000Z

175

Biogeochemical cycling in an organic-rich coastal marine basin. 9. Sources and accumulation rates of vascular plant-derived organic material  

SciTech Connect

The sources, degradation and burial of vascular plant debris deposited over the past several decades in the lagoonal sediments of Cape Lookout Bight, North Carolina, are quantified using alkaline cupric oxide lignin oxidation product (LOP) analysis. Non-woody angiosperms, accounting for 92 {plus minus} 32% of the recognizable sedimentary vascular plant debris, are calculated to contribute 23 {plus minus} 17% of the total organic carbon buried over the past decade. When combined with a previously established sedimentary organic carbon budget for this site a vascular plant derived carbon burial rate of 26 {plus minus}20 mole C m{sup {minus}2} yr{sup {minus}1} is calculated for this same time interval. The refractory nature and invariant depth distributions of the lignin oxidation products (LOP), when coupled with evidence for constant degradation rates of metabolizable materials, indicate that sediment accumulation at this site has been a steady state process with respect to source and burial of organic carbon since its conversion from an inner-continental shelf to a lagoonal environment during the late 1960's. Thus systematic down-core decreases in labile organic matter result from early diagenetic processes rather than input rate variations.

Haddad, R.I.; Martens, C.S. (Univ. of North Carolina, Chapel Hill (USA))

1987-11-01T23:59:59.000Z

176

Synthesis of thin films and materials utilizing a gaseous catalyst  

DOE Patents (OSTI)

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

177

High Throughput Combinatorial Screening of Biometic Metal-Organic Materials for Military Hydrogen-Storage Materials (New Joint Miami U/NREL DoD/DLA Project) (presentation)  

NLE Websites -- All DOE Office Websites (Extended Search)

Miami University/NREL DoD/DLA Project Miami University/NREL DoD/DLA Project High throughput combinatorial screening of biomimetic metal-organic materials for military hydrogen-storage applications Philip Parilla - NREL Joe Zhou, Dan Zhao - Miami U, Ohio Jeff Blackburn, Kevin O'Neill, Lin Simpson, Mike Heben - NREL Outline * Miami/NREL Project - Synthesis (Miami) - High Throughput Characterization (NREL) - Other Characterization * Other High Throughput Activities (NREL) - Parallel Sieverts - Parallel Gravimetric * Final Comments Overview of Miami/NREL Project * Goals - Development of H 2 storage materials based on MOFs, targeting 15 kJ/mole binding energy and high density of H 2 sites - Development of optical-based detection of adsorbed H 2 allowing rapid screening of samples * Approach - Combinatorial MOFs synthesis involving 8

178

Heavy atom induced phosphorescence of organic materials using mono- and trifunctional organomercury derivatives  

E-Print Network (OSTI)

This dissertation focuses on the phosphorescence of organic chromophores using perfluoro-ortho-phenylene mercury (1) and bis(pentafluorophenyl)mercury (2) as external heavy atom effect inducers. To ascertain the suitability of these luminescent...

Burress, Charlotte Nicole

2009-05-15T23:59:59.000Z

179

Pentafluorophenoxy Boron Subphthalocyanine (F5BsubPc) as a Multifunctional Material for Organic Photovoltaics  

Science Journals Connector (OSTI)

We have demonstrated that pentafluoro phenoxy boron subphthalocyanine (F5BsubPc) can function as either an electron donor or an electron acceptor layer in a planar heterojunction organic photovolatic (PHJ OPV) cell. ...

Graham E. Morse; Jeremy L. Gantz; K. Xerxes Steirer; Neal R. Armstrong; Timothy P. Bender

2013-12-27T23:59:59.000Z

180

Assembly of a Bacteriophage-Based Template for the Organization of Materials into Nanoporous Networks  

E-Print Network (OSTI)

M13 bacteriophages are assembled via a covalent layer-by-layer process to form a highly nanoporous network capable of organizing nanoparticles and acting as a scaffold for templating metal-oxides. The morphological and ...

Hammond, Paula T.

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Weathered Diesel oil as a sorptive phase for hydrophobic organic compounds in aquifer materials  

E-Print Network (OSTI)

The sorptive properties of weathered diesel oil were investigated by conducting miscible displacement experiments with three hydrophobic organic compounds (HOCs), acenapthene, fluorene, and dibenzothiophene, as tracers in columns containing aquifer...

Hudson, Rondall James

2012-06-07T23:59:59.000Z

182

Terahertz and infrared transmission of an organic/inorganic hybrid thermoelectric material  

SciTech Connect

We report terahertz and infrared transmission measurements of a high-performance thermoelectric material containing tellurium nanowires in a conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) matrix. The DC electrical conductivity of the hybrid material (41?S/cm) is approximately one hundred times that of pure PEDOT:PSS and more than 400 times that of a film of pure tellurium nanowires, while the terahertz-frequency (THz) conductivity of PEDOT:PSS and the hybrid material are comparable at f???2THz. A frequency-dependent conductivity model indicates that the increased DC conductivity of the hybrid material results from an increase in the DC charge mobility rather than in the free charge density. We suggest that the increased DC conductivity of the hybrid material results from an increase in linkage between PEDOT domains by the tellurium nanowires.

Heyman, J. N., E-mail: heyman@macalester.edu; Alebachew, B. A.; Kaminski, Z. S.; Nguyen, M. D. [Physics Department, Macalester College, St. Paul, Minnesota 55105 (United States); Coates, N. E.; Urban, J. J. [The Molecular Foundry, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2014-04-07T23:59:59.000Z

183

Organization  

NLE Websites -- All DOE Office Websites (Extended Search)

Organization Print Organization Print 2012-12 org chart A complete ALS organization chart (June 2013) is available in PDF. Appointed and elected members of advisory panels provide guidance to Berkeley Lab and ALS management in developing the ALS scientific and user programs. ALS Staff Photo staff photo thumb Click on the image to see a recent photo of ALS staff in front of the dome. The photo was taken on May 14, 2013. ALS Management and Advisory Team Steve Kevan, Deputy Division Director, Science Michael J. Banda, Deputy Division Director, Operations Robert W. Schoenlein, Senior Staff Scientist, Next Generation Light Source Initiative Janos Kirz, Scientific Advisor Paul Adams, Division Deputy for Biosciences ALS Scientific, Technical, and User Support Groups Accelerator Physics

184

Wide-Bandgap Semiconductors  

SciTech Connect

With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters. With the advent of the use of SiC devices it is imperative that models of these be made available in commercial simulators. This enables power electronic designers to simulate their designs for various test conditions prior to fabrication. To build an accurate transistor-level model of a power electronic system such as an inverter, the first step is to characterize the semiconductor devices that are present in the system. Suitable test beds need to be built for each device to precisely test the devices and obtain relevant data that can be used for modeling. This includes careful characterization of the parasitic elements so as to emulate the test setup as closely as possible in simulations. This report is arranged as follows: Chapter 2--The testing and characterization of several diodes and power switches is presented. Chapter 3--A 55-kW hybrid inverter (Si insulated gate bipolar transistor--SiC Schottky diodes) device models and test results are presented. A detailed description of the various test setups followed by the parameter extraction, modeling, and simulation study of the inverter performance is presented. Chapter 4--A 7.5-kW all-SiC inverter (SiC junction field effect transistors (JFET)--SiC Schottky diodes) was built and tested. The models built in Saber were validated using the test data and the models were used in system applications in the Saber simulator. The simulation results and a comparison of the data from the prototype tests are discussed in this chapter. Chapter 5--The duration test results of devices utilized in buck converters undergoing reliability testing are presented.

Chinthavali, M.S.

2005-11-22T23:59:59.000Z

185

Materials  

NLE Websites -- All DOE Office Websites (Extended Search)

2 MAG LAB REPORTS Volume 18 No. 1 CONDENSED MATTER SCIENCE Technique development, graphene, magnetism & magnetic materials, topological insulators, quantum fl uids & solids,...

186

High triplet energy Al complex as a host material for blue phosphorescent organic light-emitting diodes  

Science Journals Connector (OSTI)

Abstract An Al complex, tris((2-(pyrazol-1-yl)pyridin-3-yl)oxy)aluminum (Al(pypy)3), was synthesized as a high triplet energy host material for blue phosphorescent organic light-emitting diodes. A high triplet energy ligand, 2-(1H-pyrazol-1-yl)pyridin-3-ol, was coordinated to the Al to develop the high triplet energy host material derived from Al. The Al(pypy)3 host showed a high triplet energy of 2.86 eV for efficient energy transfer to blue triplet emitter. A maximum quantum efficiency of 20.5% was achieved in blue device using the Al(pypy)3 host material.

Chan Seok Oh; Jun Yeob Lee

2014-01-01T23:59:59.000Z

187

Laser Cooling of a Semiconductor by 40 Kelvin: An Optical Refrigerator Based on Cadmium Sulfide Nanoribbons  

E-Print Network (OSTI)

of semiconductors using CdS nanoribbons (or nanobelts) in this work. This net cooling effect is found: Optical refrigeration, Laser cooling of semiconductors, CdS nanobelts, anti-Stokes luminescence 1) doped crystals or glasses and direct bandgap semiconductors. Rare-earth doped materials were proposed

Xiong, Qihua

188

A High Through-put Combinatorial Growth Technique for Semiconductor Thin Film Search  

SciTech Connect

Conventional semiconductor material growth technique is costly and time-consuming. Here we developed a new method to growth semiconductor thin films using high through-put combinatorial technique. In this way, we have successfully fabricated tens of semiconductor libraries with high crystallinity and high product of {mu}{tau} for the purpose of radiation detection.

Ma, Z. X.; Hao, H. Y.; Xiao, P.; Oehlerking, L. J.; Liu, D. F.; Zhang, X. J.; Yu, K.-M.; Walukiewicz, W.; Mao, S. S. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Yu, P. Y. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States)

2011-12-23T23:59:59.000Z

189

Thermal instabilities of organic carbonates with charged cathode materials in lithium-ion batteries  

Science Journals Connector (OSTI)

Partially de-lithiated Li X CoO2 with layered structure is metastable in nature, this material will decompose above 470 K and liberate oxygen. Dahn et al. [4] have demonstrated t...

Yih-Shing Duh; Chen-Shan Kao; Wei-Jie Ou…

2014-06-01T23:59:59.000Z

190

The Constitution of Highly Reliable Practices: Materializing Communication as Constitutive of Organizing  

E-Print Network (OSTI)

on collective mind, this study uses a practice-based communication approach to examine the material interplay of bodies, objects, and sites using ethnography and grounded theory. In-depth interviews, participant observations, and organizational documents were...

Spradley, Robert Tyler

2012-10-19T23:59:59.000Z

191

A ladder of polariton branches formed by coupling an organic semiconductor exciton to a series of closely spaced cavity-photon modes  

SciTech Connect

We construct a microcavity in which the extended optical path length of the cavity (5.9??m) permits a series of closely spaced optical modes to be supported. By placing a J-aggregated cyanine dye into the cavity, we reach the strong-coupling regime and evidence a simultaneous optical hybridization between the organic-exciton and a number of the confined cavity modes, forming an effective ladder of polariton branches. We explore the emission from such cavities and evidence a polariton-population on adjacent polariton branches around k{sub ?}?=?0.

Coles, David M.; Lidzey, David G. [Department of Physics and Astronomy, University of Sheffield, Hicks Building, Hounsfield Road, Sheffield S3 7RH (United Kingdom)

2014-05-12T23:59:59.000Z

192

Crystalline-Silicon/Organic Heterojunctions for Solar  

E-Print Network (OSTI)

-semiconductors is potentially cheaper, but the organic solar cells are not very efficient. In this thesis we explore if organic semiconductors can be integrated with silicon to form hybrid organic/silicon solar cells that are both efficient, a silicon/organic heterojunction solar cell with an open-circuit voltage of 0.59 V and power conversion

193

Algae as Nutrient Material for studying Ca-Sr Relationships in Heterotrophic Organisms  

Science Journals Connector (OSTI)

... The feasibility of such a use for the alga, however, depends on several suppositions. The first is that the ... , however, depends on several suppositions. The first is that the alga will provide all the organic nutrients needed by the heterotroph; second, that the ...

TOM E. DENTON; J. C. O'KELLEY

1970-09-12T23:59:59.000Z

194

Acoustoelectric Interactions in Piezoelectric Semiconductors  

Science Journals Connector (OSTI)

Piezoelectric semiconductors such as cadmium sulfide exhibit a strong coupling between conduction electrons that are present in the substance and acoustic waves that are propagated along certain directions in the material. This energy exchange mechanism is highly nonlinear, and thus the simultaneous introduction of several collinear acoustic waves into the substance generates new signals at the conbination (sum and difference) frequencies. A theoretical explanation of this interaction mechanism, based on consideration of the nonlinear cross term present in the current-density equation, has been developed, and the validity of this method of analysis has been tested and qualitatively confirmed through experimentation.

R. Mauro and W. C. Wang

1970-01-15T23:59:59.000Z

195

E-Print Network 3.0 - advanced electronic materials Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

University of Cambridge Collection: Materials Science 78 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

196

Invited paper History of Semiconductors  

E-Print Network (OSTI)

Abstract—The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and the theory of semiconductors up to the contemporary devices (SOI and multigate devices). Keywords—band theory, laser, Moore’s law, semiconductor, transistor.

Lidia ?ukasiak; Andrzej Jakubowski

197

Applied Materials Inc AMAT | Open Energy Information  

Open Energy Info (EERE)

Inc AMAT Inc AMAT Jump to: navigation, search Name Applied Materials Inc (AMAT) Place Santa Clara, California Zip 95052-8039 Sector Solar Product US-based manufacturer of equipment used in solar (silicon, thin-film, BIPV), semiconductor, and LCD markets. References Applied Materials Inc (AMAT)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Applied Materials Inc (AMAT) is a company located in Santa Clara, California . References ↑ "Applied Materials Inc (AMAT)" Retrieved from "http://en.openei.org/w/index.php?title=Applied_Materials_Inc_AMAT&oldid=342244" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes

198

Early evidence of San material culture represented by organic artifacts from Border Cave, South Africa  

Science Journals Connector (OSTI)

...spiral incisions, and rare marine shells (30–32). If bored...the remains of the occlusal wear facet, indicating a preference...marks on the tip are smoothed by wear, suggesting their use as awls to...polished, suggesting intense use wear on a soft material. The tool...

Francesco d’Errico; Lucinda Backwell; Paola Villa; Ilaria Degano; Jeannette J. Lucejko; Marion K. Bamford; Thomas F. G. Higham; Maria Perla Colombini; Peter B. Beaumont

2012-01-01T23:59:59.000Z

199

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications  

DOE Patents (OSTI)

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

2008-03-18T23:59:59.000Z

200

Type-II quasi phase matching in periodically intermixed semiconductor superlattice waveguides  

E-Print Network (OSTI)

. Many semicon- ductors have nonlinear optical susceptibilities with values well in excess of conventional materials, such as lithium niobate. Semiconductors have an addi- tional advantage

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

E-Print Network 3.0 - ag-in-s ternary semiconductor Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Engineering 14 Semiconductor Materials S. K. Tewksbury Summary: and for optoelectronic devices. Optoelectronics has taken advantage of ternary and quaternary III-V...

202

Carbazolyldibenzofuran-type high-triplet-energy bipolar host material for blue phosphorescent organic light-emitting diodes  

Science Journals Connector (OSTI)

Abstract A high-triplet-energy material, 9?-(4,4?-(phenylphosphoryl)bis(dibenzo[b,d]furan-6,2-diyl))bis(9H-carbazole) (44DFCzPO), was synthesized as a bipolar host material for blue phosphorescent organic light-emitting diodes (PHOLEDs). 44DFCzPO was synthesized by the selective lithiation of the 4-position of a carbazole-modified dibenzofuran, followed by phosphorylation. 44DFCzPO showed a high triplet energy of 2.91 eV for energy transfer to a blue phosphorescent dopant, and bipolar charge transport properties for balanced hole and electron density in the emitting layer. A high quantum efficiency of 16.7% at a low doping concentration of 3% was obtained using 44DFCzPO as the host in blue PHOLEDs.

Sook Hee Jeong; Jun Yeob Lee

2014-01-01T23:59:59.000Z

203

Mixed Semiconductor Nanocrystal Compositions  

NLE Websites -- All DOE Office Websites (Extended Search)

Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors. Available for thumbnail of Feynman Center (505) 665-9090 Email Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors, wherein energy is transferred from the energy donor to the energy acceptor and wherein: the energy acceptor is a colloidal nanocrystal having a lower band gap energy than the energy donor; the energy donor and the energy acceptor are separated by a distance of 40 nm or less; wherein the average peak absorption energy of the acceptor is at least 20 meV greater than the average peak emission energy of the energy donor; and

204

Method for destroying hazardous organics and other combustible materials in a subcritical/supercritical reactor  

DOE Patents (OSTI)

A waste destruction method using a reactor vessel to combust and destroy organic and combustible waste, including the steps of introducing a supply of waste into the reactor vessel, introducing a supply of an oxidant into the reactor vessel to mix with the waste forming a waste and oxidant mixture, introducing a supply of water into the reactor vessel to mix with the waste and oxidant mixture forming a waste, water and oxidant mixture, reciprocatingly compressing the waste, water and oxidant mixture forming a compressed mixture, igniting the compressed mixture forming a exhaust gas, and venting the exhaust gas into the surrounding atmosphere.

Janikowski, Stuart K. (Idaho Falls, ID)

2000-01-01T23:59:59.000Z

205

Electrocatalytic Materials and Techniques for the Anodic Oxidation of Various Organic Compounds  

SciTech Connect

The focus of this thesis was first to characterize and improve the applicability of Fe(III) and Bi(V) doped PbO{sub 2} film electrodes for use in anodic O-transfer reactions of toxic and waste organic compounds, e.g. phenol, aniline, benzene, and naphthalene. Further, they investigated the use of alternative solution/electrode interfacial excitation techniques to enhance the performance of these electrodes for remediation and electrosynthetic applications. Finally, they have attempted to identify a less toxic metal oxide film that may hold promise for future studies in the electrocatalysis and photoelectrocatalysis of O-transfer reactions using metal oxide film electrodes.

Stephen Everett Treimer

2002-06-27T23:59:59.000Z

206

Materials  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Materials and methods are available as supplementary materials on Science Online. 16. W. Benz, A. G. W. Cameron, H. J. Melosh, Icarus 81, 113 (1989). 17. S. L. Thompson, H. S. Lauson, Technical Rep. SC-RR-710714, Sandia Nat. Labs (1972). 18. H. J. Melosh, Meteorit. Planet. Sci. 42, 2079 (2007). 19. S. Ida, R. M. Canup, G. R. Stewart, Nature 389, 353 (1997). 20. E. Kokubo, J. Makino, S. Ida, Icarus 148, 419 (2000). 21. M. M. M. Meier, A. Reufer, W. Benz, R. Wieler, Annual Meeting of the Meteoritical Society LXXIV, abstr. 5039 (2011). 22. C. B. Agnor, R. M. Canup, H. F. Levison, Icarus 142, 219 (1999). 23. D. P. O'Brien, A. Morbidelli, H. F. Levison, Icarus 184, 39 (2006). 24. R. M. Canup, Science 307, 546 (2005). 25. J. J. Salmon, R. M. Canup, Lunar Planet. Sci. XLIII, 2540 (2012). Acknowledgments: SPH simulation data are contained in tables S2 to S5 of the supplementary materials. Financial support

207

NREL: Photovoltaics Research - New Materials, Devices, and Processes for  

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New Materials, Devices, and Processes for Advanced Concepts New Materials, Devices, and Processes for Advanced Concepts Computational Science and Theory We can use high-performance computing tools in modeling and simulation studies of semiconductor and other solar materials. We also determine the performance of solar devices. Theoretical studies can help us understand underlying physical principles or predict useful chemical compositions and crystalline structures. Scientific Computing Experimental Materials Science Solid-State Theory. NREL has strong complementary research capabilities in organic photovoltaic (OPV) cells, transparent conducting oxides (TCOs), combinatorial (combi) methods, and atmospheric processing. From fundamental physical studies to applied research relating to solar industry needs, we are developing the

208

Emissivity Correcting Pyrometry of Semiconductor Growth  

NLE Websites -- All DOE Office Websites (Extended Search)

Emissivity Correcting Pyrometry of Semiconductor Growth Emissivity Correcting Pyrometry of Semiconductor Growth by W. G. Breiland, L. A. Bruskas, A. A. Allerman, and T. W. Hargett Motivation-Temperature is a critical factor in the growth of thin films by either chemical vapor deposition (CVD) or molecular beam epitaxy (MBE). It is particularly important in compound semiconductor growth because one is often challenged to grow materials with specific chemical compositions in order to maintain stringent lattice-matching conditions or to achieve specified bandgap values. Optical pyrometry can be used to measure surface temperatures, but the thin film growth causes significant changes in the emissivity of the surface, leading to severe errors in the pyrometer measurement. To avoid these errors, emissivity changes must be measured and

209

Thermal Conductivity of Polycrystalline Semiconductors and Ceramics  

E-Print Network (OSTI)

semiconductors and ceramics with desired thermalthermal conductivity of several polycrystalline semiconductors and ceramics,Thermal Conductivity of Polycrystalline Semiconductors and Ceramics

Wang, Zhaojie

2012-01-01T23:59:59.000Z

210

Extracting hot carriers from photoexcited semiconductor nanocrystals  

SciTech Connect

This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

Zhu, Xiaoyang

2014-12-10T23:59:59.000Z

211

Catalysts for the hydrodenitrogenation of organic materials and process for the preparation of the catalysts  

DOE Patents (OSTI)

The present invention discloses a process for forming a catalyst for the hydrodenitrogenation of an organic feedstock, which includes (a) obtaining a precatalyst comprising cobalt and molybdenum or nickel and molybdenum; (b) adding in a non-oxidizing an atmosphere selected from hydrogen, helium, nitrogen, neon, argon, carbon monoxide or mixtures thereof to the precatalyst of step (a), a transition met ORIGIN OF THE INVENTION This invention was made in the course of research partially sponsored by the Department of Energy through grants DE-FG22-83P C60781 and DE-FG-85-PC80906, and partially supported by grant CHE82-19541 of the National Science Foundation. The invention is subject to Public Law 96-517 (and amendments), and the United States Government has rights in the present invention.

Laine, Richard M. (Palo Alto, CA); Hirschon, Albert S. (Menlo Park, CA); Wilson, Jr., Robert B. (Mountain View, CA)

1987-01-01T23:59:59.000Z

212

Realization of Spin Gapless Semiconductors: The Heusler Compound Mn2CoAl  

Science Journals Connector (OSTI)

Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn2CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2?B. Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn2CoAl is not only suitable material for room temperature semiconductor spintronics, the robust spin polarization of the spin gapless semiconductors makes it very promising material for spintronics in general.

Siham Ouardi; Gerhard H. Fecher; Claudia Felser; Jürgen Kübler

2013-03-05T23:59:59.000Z

213

Crater formation by single ions in the electronic stopping regime: Comparison of molecular dynamics simulations with experiments on organic films  

E-Print Network (OSTI)

simulations with experiments on organic films E. M. Bringa* and R. E. Johnson Engineering Physics, University modification of materials by single-ion irradiation has been studied in insulators,1­6 semiconductors,7 energy deposition and yields, redepo- sition of the ejecta plus plastic deformation occurs, produc- ing

Johnson, Robert E.

214

Organic electronics: from lab to markets  

Science Journals Connector (OSTI)

Organic semiconductors with conjugated electron system are currently intensively investigated for optoelectronic applications. This interest is spurred by novel devices such as organic light-emitting diodes (OLED), organic solar cells, and flexible electronics. ...

K. Leo

2014-03-01T23:59:59.000Z

215

Thermally robust semiconductor optical amplifiers and laser diodes  

DOE Patents (OSTI)

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Dijaili, Sol P. (Moraga, CA); Patterson, Frank G. (Danville, CA); Walker, Jeffrey D. (El Cerrito, CA); Deri, Robert J. (Pleasanton, CA); Petersen, Holly (Manteca, CA); Goward, William (Antioch, CA)

2002-01-01T23:59:59.000Z

216

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents (OSTI)

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

2014-01-28T23:59:59.000Z

217

Sulfides organic polymer: Novel cathode active material for rechargeable lithium batteries  

Science Journals Connector (OSTI)

Two novel sulfide polymers, poly(2-phenyl-1,3-dithiolane) and poly[1,4-di(1,3-dithiolan-2-yl)benzene], were prepared via facile oxidative-coupling polymerization under ambient conditions, characterized by FT-IR, XRD, TGA and elemental analysis, and were tested as cathode materials in rechargeable lithium battery. The charge–discharge tests showed that the specific capacity of poly[1,4-di(1,3-dithiolan-2-yl)benzene)] was 378 mAh g?1 at the third cycle, and retained at 300 mAh g?1 after 20 cycles. The specific capacity of poly(2-phenyl-1,3-dithiolane) was 117 mAh g?1 at the second cycle, and retained at 100 mAh g?1 after 20 cycles. The results indicated that thiolane group could be used as cathode active function group for lithium secondary batteries and the novel electrode reaction is proposed tentatively.

Jing Yu Zhang; Ling Bo Kong; Li Zhi Zhan; Jing Tang; Hui Zhan; Yun Hong Zhou; Cai Mao Zhan

2007-01-01T23:59:59.000Z

218

Novel room temperature ferromagnetic semiconductors  

SciTech Connect

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

Gupta, Amita

2004-11-01T23:59:59.000Z

219

Influence of image charge effect on exciton fine structure in an organic-inorganic quantum well material  

SciTech Connect

We have investigated experimentally excitonic properties in organic-inorganic hybrid multi quantum well crystals, (C{sub 4}H{sub 9}NH{sub 3}){sub 2}PbBr{sub 4} and (C{sub 6}H{sub 5}?C{sub 2}H{sub 4}NH{sub 3}){sub 2}PbBr{sub 4}, by measuring photoluminescence, reflectance, photoluminescence excitation spectra. In these materials, the excitonic binding energies are enhanced not only by quantum confinement effect (QCE) but also by image charge effect (ICE), since the dielectric constant of the barrier layers is much smaller than that of the well layers. By comparing the 1s-exciton and 2s-exciton energies, we have investigated the influence of ICE with regard to the difference of the Bohr radius.

Takagi, Hidetsugu; Kunugita, Hideyuki; Ema, Kazuhiro [Department of Physics, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Sato, Mikio; Takeoka, Yuko [Department of Materials and Life Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

2013-12-04T23:59:59.000Z

220

Structural Phase Contrast in Polycrystalline Organic Semiconductor  

E-Print Network (OSTI)

electronics", with devices such as light- emitting diodes, lasers, photovoltaic cells, field-effect transis

Peinke, Joachim

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221

Argonne licenses diamond semiconductor discoveries to AKHAN Technologies |  

NLE Websites -- All DOE Office Websites (Extended Search)

licenses diamond semiconductor discoveries to AKHAN Technologies licenses diamond semiconductor discoveries to AKHAN Technologies By Joseph Bernstein * By Jared Sagoff * March 4, 2013 Tweet EmailPrint LEMONT, Ill. - The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The Argonne-developed technology allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400 degrees Celsius. The combination of the Argonne's low-temperature diamond technology with AKHAN's Miraj Diamond(tm) process represents the state of the art in diamond semiconductor

222

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2013-03-12T23:59:59.000Z

223

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2010-09-21T23:59:59.000Z

224

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2011-10-18T23:59:59.000Z

225

Hydroxyl-decorated graphene systems as candidates for organic metal-free ferroelectrics, multiferroics, and high-performance proton battery cathode materials  

Science Journals Connector (OSTI)

Using a first-principles method we show that graphene based materials, functionalized with hydroxyl groups, constitute a class of multifunctional, lightweight, and nontoxic organic materials with functional properties such as ferroelectricity, multiferroicity, and can be used as proton battery cathode materials. For example, the polarizations of semihydroxylized graphane and graphone, as well as fully hydroxylized graphane, are much higher than any organic ferroelectric materials known to date. Further, hydroxylized graphene nanoribbons with proton vacancies at the end can have much larger dipole moments. They may also be applied as high-capacity cathode materials with a specific capacity that is six times larger than lead-acid batteries and five times that of lithium-ion batteries.

Menghao Wu; J. D. Burton; Evgeny Y. Tsymbal; Xiao Cheng Zeng; Puru Jena

2013-02-19T23:59:59.000Z

226

Scientists seek nonlinear optical materials  

Science Journals Connector (OSTI)

Nonlinear optical materials seem about to do for light what semiconductors already have done for electricity. ... Successful development of these materials could mean big payoffs in telecommunications, data processing, nuclear fusion, and applications of lasers in commerce and industry generally. ...

1982-10-04T23:59:59.000Z

227

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof  

DOE Patents (OSTI)

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04T23:59:59.000Z

228

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

229

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

230

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

231

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

232

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

233

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

234

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

High Power Electronics Based on the 2-Dimensional Electron Gas in GaN High Power Electronics Based on the 2-Dimensional Electron Gas in GaN Heterostructures by S. R. Kurtz, A. A. Allerman, and D. Koleski Motivation-GaN-based electronics offer miniaturization potential of radical proportions for microwave power amplifiers. GaN's large bandgap, high breakdown field, high electron velocity, and excellent thermal properties have led to high electron mobility transistors (HEMT) with up to 10x the power density of GaAs and other traditional semiconductors at frequencies up to 20 GHz. Further contributing to the outstanding performance of GaN-based amplifiers is the highly conducting, 2-dimensional electron gas (2DEG) used for the HEMT channel. Intrinsic polarization and piezoelectric properties of GaN materials can produce a 2DEG at an

235

Kansas Advanced Semiconductor Project  

SciTech Connect

KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

2007-09-21T23:59:59.000Z

236

GaTe semiconductor for radiation detection  

DOE Patents (OSTI)

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

237

Organic Molecule Functionalized Zn3P2 Nanowire Inorganic-Organic Hybrid Thermoelectrics  

Energy.gov (U.S. Department of Energy (DOE))

Demonstrates self-catalytic schemes for large-scale synthesis of compound semiconductor nanowire powders for inorganic-organic hybrid thermoelectric cells

238

Organic Vegetable Organic Vegetable  

E-Print Network (OSTI)

marketed separately from conventionally grown produce in order to be profitably sold. Because of the amount of organic material include compost, Purdue University · Cooperative Extension Service · Knowledge to Go

239

EMSL - organic materials  

NLE Websites -- All DOE Office Websites (Extended Search)

compounds. In this work, time-of-flight secondary ion mass spectrometry (ToF-SIMS) is applied to determine the angular distribution of 1 MeV Au ions after penetrating a...

240

Center for Nanophase Materials Sciences (CNMS) - News  

NLE Websites -- All DOE Office Websites (Extended Search)

94720 6 Institute for Problems of Materials Science, National Academy of Science of Ukraine, Kiev, Ukraine 7 Institute of Semiconductor Physics, National Academy of Science of...

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Single-photon imaging in complementary metal oxide semiconductor processes  

Science Journals Connector (OSTI)

...integrated in new materials, e.g. germanium-on-silicon...implemented as an active or as passive...bias of the cathode or the anode...A review of active and passive...voltage at the cathode to follow an...semiconductor material with decreasing...region. The cathode (in this case...whereas active quenching is...

2014-01-01T23:59:59.000Z

242

Semiconductor gamma radiation detectors: band structure effects in energy resolution  

E-Print Network (OSTI)

high precision and in a broad energy range, the number of created pairs N is just proportional (referred to as the pair excitation energy). For semiconductor materials the pair excitation energy becomes important in the search for materials with improved energy resolution. #12;Theoretical models used

Luryi, Serge

243

Methods of forming semiconductor devices and devices formed using such methods  

DOE Patents (OSTI)

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

2013-05-21T23:59:59.000Z

244

Semiconductor radiation detector  

DOE Patents (OSTI)

A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

Patt, Bradley E. (Sherman Oaks, CA); Iwanczyk, Jan S. (Los Angeles, CA); Tull, Carolyn R. (Orinda, CA); Vilkelis, Gintas (Westlake Village, CA)

2002-01-01T23:59:59.000Z

245

Improved power efficiency in blue phosphorescent organic light-emitting diodes using diphenylmethyl linkage based high triplet energy hole transport materials  

Science Journals Connector (OSTI)

Improved power efficiency in blue phosphorescent organic light-emitting diodes (PHOLEDs) was demonstrated by using new high triplet energy hole-transport materials based on the diphenylmethyl linkage. Two high triplet energy hole-transport materials with diphenylamine or ditolyamine moieties linked through a diphenylmethyl linkage, 4,4?-(diphenylmethylene)bis(N,N-diphenylaniline) (TCBPA) and 4,4?-(diphenylmethylene)bis(N,N-di-p-tolylaniline), were synthesized and evaluated as hole-transport materials for blue PHOLEDs. The power efficiency of TCBPA was superior to that of standard 1,1-bis[4-[N,N?-di(p-tolyl)amino]phenyl]cyclohexane.

Chil Won Lee; Jun Yeob Lee

2013-01-01T23:59:59.000Z

246

Novel Magnetic Materials Including Organic I S. Shaheen, Chairman Magnetic ordering in M,,ox...,,bpy... system ,,MFe, Co, Ni; oxC2O4  

E-Print Network (OSTI)

Novel Magnetic Materials Including Organic I S. Shaheen, Chairman Magnetic ordering in M of the magnetization have been measured to investigate the magnetic properties of the first oxalate­bpy mixed , in which the magnetic M ions form one-dimensional chains along the a axis. Spontaneous magnetic orderings

Li, Jing

247

Supplementary material: On the impacts of phytoplankton-derived organic matter on the properties of the primary marine aerosol: Part 2-composition, hygroscopicity and  

E-Print Network (OSTI)

Supplementary material: On the impacts of phytoplankton-derived organic matter on the properties Artificial seawater without exudate Natural seawater+nutrients medium SWP with Phaeocystis exudate: OC NaCl theory Artificial seawater without exudate Natural seawater+nutrients medium SWP with E. Huxleyi

Meskhidze, Nicholas

248

Semiconductor P-I-N detector  

DOE Patents (OSTI)

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Sudharsanan, Rengarajan (53 Timber Line Dr., Nashua, NH 03062); Karam, Nasser H. (577 Lowell St., Lexington, MA 02173)

2001-01-01T23:59:59.000Z

249

Bredas-121511 - Argonne National Laboratories, Materials Sicence Division  

NLE Websites -- All DOE Office Websites (Extended Search)

Bredas-121511 Bredas-121511 MATERIALS SCIENCE COLLOQUIUM SPEAKER: Professor Jean-Luc Bredas Georgia Tech TITLE: "Electronic and Optical Processes in Organic Semiconductors: The Case of Organic Solar Cells" DATE: Thursday, December 15, 2011 TIME: 11:00 a.m. PLACE: Building 212 / A-157 HOST: John Schlueter Refreshments will be served at 10:45 a.m. ABSTRACT: Our objective in this presentation is two-fold. First, we provide a general overview of the optical and electronic processes that take place in a solid-state organic solar cell, which we define as a cell in which the semiconducting materials between the electrodes are organic, be them polymers, oligomers, or small molecules. We briefly turn our attention to: (i) optical absorption and exciton formation; (ii) exciton migration to the

250

Low temperature production of large-grain polycrystalline semiconductors  

DOE Patents (OSTI)

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Naseem, Hameed A. (Fayetteville, AR); Albarghouti, Marwan (Loudonville, NY)

2007-04-10T23:59:59.000Z

251

Theory and Design of Smith-Purcell Semiconductor Terahertz Sources  

E-Print Network (OSTI)

-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the “three-nitride” (III-N) family...-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the “three-nitride” (III-N) family...

Smith, Don DeeWayne

2013-12-06T23:59:59.000Z

252

Argonne CNM News: State-of-the-Art Diamond Semiconductor Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies, Inc., exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The method allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400°C, highly advantageous for integration with processed semiconductor electronic materials and resulting in the deposition of low-defect nanocrystalline diamond (NCD) thin films. The combination of CNM's low-temperature diamond technology with the AKHAN Miraj Diamond(tm) process represents the state of the art in diamond semiconductor thin-film technology.

253

Monte-Carlo simulations of light propagation in luminescent solar concentrators based on semiconductor nanoparticles  

E-Print Network (OSTI)

wavelengths, which can be more efficiently converted to electricity by a PV cell. To achieve this, most-remission events. This is also a big advantage over conventional single material semiconductor nanopar- ticles of semiconductor-based LSCs in detail we employ Monte Carlo simulations (see Sec. II) using the measured data

Ilan, Boaz

254

Fall-2003 PH-314 A. La Rosa I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR  

E-Print Network (OSTI)

Fall-2003 PH-314 A. La Rosa JUNCTIONS I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR of the JUNCTION V. FORWARD BIAS, REVERSE BIAS I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR MATERIALS Let III. CHEMICAL POTENTIAL (FERMI LEVEL) IV. COMPARISON of CHARGE-CARRIER POPULATION at EACH SIDE

La Rosa, Andres H.

255

Avalanche semiconductor radiation detectors  

SciTech Connect

Operation of novel avalanche semiconductor detector, produced on the basis of heterojunctions Si-SiC and Si-Si{sub x}O{sub y} is described. A uniform avalanche process with gain from 10{sup 3} to 10{sup 5} can be reached depending on the conductivity of SiC and Si{sub x}O{sub y} layers. Two types of avalanche photodetectors designed for applications in wavelength range 500--10,00 nm with quantum efficiency 60 {+-} 10% (650 nm) and 200--700 nm with quantum efficiency 60 {+-} 15% (450 nm) are presented.

Sadygov, Z.Y. [Joint Inst. for Nuclear Research, Dubna (Russian Federation)] [Joint Inst. for Nuclear Research, Dubna (Russian Federation); [Azerbaijan Academy of Sciences, Baku (Azerbaijan). Physics Inst.; Zheleznykh, I.M.; Kirillova, T.A. [Russian Academy of Sciences, Moscow (Russian Federation). Inst. for Nuclear Research] [Russian Academy of Sciences, Moscow (Russian Federation). Inst. for Nuclear Research; Malakhov, N.A.; Jejer, V.N. [Joint Inst. for Nuclear Research, Dubna (Russian Federation)] [Joint Inst. for Nuclear Research, Dubna (Russian Federation)

1996-06-01T23:59:59.000Z

256

Method for measuring the drift mobility in doped semiconductors  

DOE Patents (OSTI)

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

Crandall, R.S.

1982-03-09T23:59:59.000Z

257

Method Of Transferring Strained Semiconductor Structures  

NLE Websites -- All DOE Office Websites (Extended Search)

Of Transferring Strained Semiconductor Structures Of Transferring Strained Semiconductor Structures Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. June 25, 2013 Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having

258

Semiconductor Physics at the Optical Sciences Center  

Science Journals Connector (OSTI)

This talk reviews semiconductor physics experiments and theory at the Optical Sciences Center including optical bistability, femtosecond dynamics, as well as semiconductor laser...

Koch, Stephan W

259

Opportunities for Wide Bandgap Semiconductor Power Electronics...  

Energy Savers (EERE)

Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen...

260

Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study  

SciTech Connect

Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport mechanisms at the interface of graphene and semiconductors based on conventional semiconductor Schottky theory and a floating Fermi level of graphene. The contact barrier heights can be estimated through this model and be close to the values obtained from the experiments, which are lower than those of the metal/semiconductor contacts. A detailed analysis reveals that the barrier heights are as the function of the interface separations and dielectric constants, and are influenced by the interfacial states of semiconductors. Our calculations show how this behavior of lowering barrier heights arises from the Fermi level shift of graphene induced by the charge transfer owing to the unique linear electronic structure.

Zhong, Haijian; Liu, Zhenghui; Xu, Gengzhao; Shi, Lin; Fan, Yingmin; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Xu, Ke, E-mail: kxu2006@sinano.ac.cn; Wang, Jianfeng; Ren, Guoqiang [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-01-07T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Fluorine-Modified Polyaromatic Hydrocarbons for Organic Electronics...  

NLE Websites -- All DOE Office Websites (Extended Search)

semiconductors with potential application to flexible OLED displays and organic photovoltaics (OPVs). Description The laboratory of Dr. Steven Strauss has been a pioneer in the...

262

Materials Science  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Science Materials Science Materials Science1354608000000Materials ScienceSome of these resources are LANL-only and will require Remote Access./No/Questions? 667-5809library@lanl.gov Materials Science Some of these resources are LANL-only and will require Remote Access. Key Resources Data Sources Reference Organizations Journals Key Resources CINDAS Materials Property Databases video icon Thermophysical Properties of Matter Database (TPMD) Aerospace Structural Metals Database (ASMD) Damage Tolerant Design Handbook (DTDH) Microelectronics Packaging Materials Database (MPMD) Structural Alloys Handbook (SAH) Proquest Technology Collection Includes the Materials Science collection MRS Online Proceedings Library Papers presented at meetings of the Materials Research Society Data Sources

263

New N-Type Polymers for Organic Photovoltaics: Cooperative Research and Development Final Report, CRADA Number CRD-06-177  

SciTech Connect

This CRADA will develop improved thin film organic solar cells using a new n-type semiconducting polymer. High efficiency photovoltaics (PVs) based on inorganic semiconductors have good efficiencies (up to 30%) but are extremely expensive to manufacture. Organic PV technology has the potential to overcome this problem through the use of high-throughput production methods like reel-to-reel printing on flexible substrates. Unfortunately, today's best organic PVs have only a few percent efficiency, a number that is insufficient for virtually all commercial applications. The limited choice of stable n-type (acceptor) organic semiconductor materials is one of the key factors that prevent the further improvement of organic PVs. TDA Research, Inc. (TDA) previously developed a new class of electron-deficient (n-type) conjugated polymers for use in organic light emitting diodes (OLEDs). During this project TDA in collaboration with the National Renewable Energy Laboratory (NREL) will incorporate these electron-deficient polymers into organic photovoltaics and investigate their performance. TDA Research, Inc. (TDA) is developing new materials and polymers to improve the performance of organic solar cells. Materials being developed at TDA include spin coated transparent conductors, charge injection layers, fullerene derivatives, electron-deficient polymers, and three-phase (fullerene/polythiophene/dye) active layer inks.

Olson, D.

2014-08-01T23:59:59.000Z

264

Excitonic Materials for Hybrid Solar Cells and Energy Efficient Lighting  

Science Journals Connector (OSTI)

Conventional photovoltaic technology will certainly contribute this century but to generate a significant fraction of our global power from solar energy a radically new disruptive technology is required. Research primarily focused on developing the physics and technologies being low cost photovoltaic concepts are required. The materials with carbon?based solution processible organic semiconductors with power conversion efficiency as high as ?8.2% which have emerged over the last decade as promising alternatives to expensive silicon based technologies. We aim at exploring the morphological and optoelectronic properties of blends of newly synthesized polymer semiconductors as a route to enhance the performance of organic semiconductor based optoelectronic devices like photovoltaic diodes (PV) and Light Emitting Diodes (LED). OLED efficiency has reached upto 150 lm/W and going to be next generation cheap and eco friendly solid state lighting solution. Hybrid electronics represent a valuable alternative for the production of easy processible flexible and reliable optoelectronic thin film devices. I will be presenting recent advancement of my work in the area of hybrid photovoltaics PLED and research path towards realization electrically injectable organic laser diodes.

Dinesh Kabra; Li Ping Lu; Yana Vaynzof; Myounghoon Song; Henry J. Snaith; Richard H. Friend

2011-01-01T23:59:59.000Z

265

Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots  

E-Print Network (OSTI)

technologies requiring high spec- tral quality lighting. Solubility of colloidal QDs in organic solvents- lished green, red, and orange QD-LEDs exhibit peak effi- ciencies in the range of 1%­2%,8,9 while

266

Increasing the Sensitivity of an LC–MS Method for Screening Material Extracts for Organic Extractables via Mobile Phase Optimization  

Science Journals Connector (OSTI)

......that facilitate the production of excess negative charge...number of protons to hydrogen gas. These excess charges...Chromatography, Liquid methods Drug Packaging Hydrogen-Ion Concentration Mass Spectrometry methods Organic Chemicals analysis......

Yousheng Hua; Dennis Jenke

2012-03-01T23:59:59.000Z

267

Design and implementation of a continuous improvement framework, focusing on material and information flow, for the manufacturing of organic photovoltaics  

E-Print Network (OSTI)

Konarka Technologies is an organic photo voltaic solar panel manufacturing startup and is currently in the process of ramping up their production volumes. The MIT team has worked on numerous improvement activities that ...

Gogineni, Susheel Teja

2011-01-01T23:59:59.000Z

268

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications  

E-Print Network (OSTI)

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications with material composition over a range of 0.7 to 5 eV. This factor allows them to be used for optoelectronic. Improvement in growth quality and doping of GaN is needed to improve the performance of optoelectronics

Li, Mo

269

Semiconductor bridge (SCB) igniter  

DOE Patents (OSTI)

In an explosive device comprising an explosive material which can be made to explode upon activation by activation means in contact therewith; electrical activation means adaptable for activating said explosive material such that it explodes; and electrical circuitry in operation association with said activation means; there is an improvement wherein said activation means is an electrical material which, at an elevated temperature, has a negative temperature coefficient of electrical resistivity and which has a shape and size and an area of contact with said explosive material sufficient that it has an electrical resistance which will match the resistance requirements of said associated electrical circuitry when said electrical material is operationally associated with said circuitry, and wherein said electrical material is polycrystalline; or said electrical material is crystalline and (a) is mounted on a lattice matched substrate or (b) is partially covered with an intimately contacting metallization area which defines its area of contact with said explosive material.

Bickes, Jr., Robert W. (Albuquerque, NM); Schwarz, Alfred C. (Albuquerque, NM)

1987-01-01T23:59:59.000Z

270

Web Growth of Semiconductors  

Science Journals Connector (OSTI)

A novel process for growth of diamond?lattice semiconductors is described and a model is proposed for the growth mechanism. For germanium the process yields extended thin flat sheets typically 1 cm wide and 0.1 mm thick of good crystalline quality and relatively flat {111} surfaces. The sheet or web freezes from a liquid film drawn up by surface tension between two coplanar dendrites which originate from a single seed and are grown from the melt simultaneously with the sheet. Resistivity throughout the sheet is quite uniform. Etching of germanium webs shows them to be essentially dislocation?free and does not reveal any microsegregation of impurities. Silicon and indium antimonide have also been grown in this manner.

S. O'Hara; A. I. Bennett

1964-01-01T23:59:59.000Z

271

Photoacoustic measurement of bandgaps of thermoelectric materials  

E-Print Network (OSTI)

Thermoelectric materials are a promising class of direct energy conversion materials, usually consisting of highly doped semiconductors. The key to maximizing their thermal to electrical energy conversion lies in optimizing ...

Ni, George (George Wei)

2014-01-01T23:59:59.000Z

272

Analysis of silicon carbide based semiconductor power devices and their application in power factor correction  

E-Print Network (OSTI)

cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. Material technologies superior to Si are needed for future power device developments. Silicon Carbide (SiC) based semiconductor devices...

Durrani, Yamin Qaisar

2005-11-01T23:59:59.000Z

273

Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor  

E-Print Network (OSTI)

We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this “old” semiconductor material used for the first transistor more than ...

Jifeng, Liu

274

Printing Highly-aligned Single-crystalline Organic Electronic Thin Films |  

NLE Websites -- All DOE Office Websites (Extended Search)

Printing Highly-aligned Single-crystalline Organic Electronic Thin Films Printing Highly-aligned Single-crystalline Organic Electronic Thin Films Monday, September 23, 2013 Organic semiconductor materials have some intriguing advantages compared to their inorganic counterparts: low-cost and versatile manufacturing (e.g. roll-to-roll printing), material abundance and new form factors (e.g. flexible, transparent and stretchable). However, solution-processed organic devices are usually made and optimized with poorly scalable fabrication using lab-based techniques such as spin coating or dip coating. A better route for organic-electronics fabrication is printing, which can potentially realize large-area, high-throughput, low-cost fabrication on an industrial scale. Fluence image FLUENCE: fluid-enhanced crystal engineering. Solution shearing (a) using a

275

Mathematical Modeling of Semiconductor Devices  

E-Print Network (OSTI)

fibers. · Optoelectronic emitters convert an electronic signal into light. Examples are light-emitting diodes (LED) used in displays and indication lambs and semiconductor lasers used in compact disk systems

Jüngel, Ansgar

276

Imaging of semiconductors using a flying laser spot scanning system  

E-Print Network (OSTI)

be obsezved in the wavelength vs. absorption coefficient curves shown in Figure 1 for both a direct and an indirect semiconductor material (gallium-arsenide and silicon). It is only in the direct absorption and subsequent generation of a hole electron pair... in wavelength of light used to generate carriers pro- vides some contzol over the depth of the material analyzed. Long wavelength energy (- 1 micrometer) penetrates deeply into silicon, while gallium phosphide is considered almost transparent for a typical...

Richardson, Thomas William

2012-06-07T23:59:59.000Z

277

Complex Refractive Indices of Thin Films of Secondary Organic Materials by Spectroscopic Ellipsometry from 220 to 1200 nm  

E-Print Network (OSTI)

particles were produced in a flow tube reactor by ozonolysis of volatile organic compounds, including. By comparison, the UV absorption of the monoterpene-derived SOMs was negligible. On the basis of the measured and mode diameter. 1. INTRODUCTION Aerosol particles directly influence Earth's radiative balance

278

Coated semiconductor devices for neutron detection  

DOE Patents (OSTI)

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

Klann, Raymond T. (Bolingbrook, IL); McGregor, Douglas S. (Whitmore Lake, MI)

2002-01-01T23:59:59.000Z

279

Long- and short-period nanostructure formation on semiconductor surfaces at different ambient conditions  

SciTech Connect

We present the results of studies of nanoripples formation during interaction of the 800 nm, 120, and 35 fs pulses with semiconductor surfaces. Simultaneous appearance of the ripples with the period (700 nm) close to the wavelength of interacting radiation and considerably smaller period (180 nm) was achieved. We discuss the experimental conditions for the formation of these nanoripples (incidence angle, polarization, number of shots, etc.). We show a decisive role of surrounding medium on the quality of nanoripples formation. The self-organization of high-quality nanoripples was clearly shown in the case of dense surrounding medium (methanol), while in the case of insufficient amount of surrounding material (i.e., at different vacuum conditions), the quality of ripples considerably decreased.

Ganeev, R. A. [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Institut national de la recherche scientifique, Centre Energie, Materiaux et Telecommunications, 1650 Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada); Institute of Electronics, Uzbekistan Academy of Sciences, Akademgorodok, 33, Dormon Yoli Street, Tashkent 100125 (Uzbekistan); Baba, M.; Kuroda, H. [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Faculty of Medicine, Saitama Medical University, 38 Hongou, Moro, Moroyama, Iruma, Saitama 350-0495 (Japan); Ozaki, T. [Institut national de la recherche scientifique, Centre Energie, Materiaux et Telecommunications, 1650 Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

2010-05-15T23:59:59.000Z

280

OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES  

SciTech Connect

This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

Grant, C D; Zhang, J Z

2007-09-28T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Center for Nanophase Materials Sciences (CNMS) - CNMS User Research  

NLE Websites -- All DOE Office Websites (Extended Search)

3Lashkaryov Institute for Semiconductor Physics, National Academy of Science of Ukraine; 4Department of Materials Science and Engineering, Pennsylvania State University...

282

Center for Nanophase Materials Sciences (CNMS) - CNMS Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Ridge, TN, 37831 2 Institute of Semiconductor Physics, National Academy of Science of Ukraine,41, pr. Nauki, 03028 Kiev, Ukraine 3 Institute for Problems of Materials Science,...

283

Paul V. Braun and John A. Rogers Materials Research Laboratory...  

NLE Websites -- All DOE Office Websites (Extended Search)

epitaxy of high- performance III-V semiconductor materials. We have demonstrated optoelectronic functionality by fabricating a 3D photonic crystal LED, the rst- ever electrically...

284

Nanostructured materials for hydrogen storage  

DOE Patents (OSTI)

A system for hydrogen storage comprising a porous nano-structured material with hydrogen absorbed on the surfaces of the porous nano-structured material. The system of hydrogen storage comprises absorbing hydrogen on the surfaces of a porous nano-structured semiconductor material.

Williamson, Andrew J. (Pleasanton, CA); Reboredo, Fernando A. (Pleasanton, CA)

2007-12-04T23:59:59.000Z

285

JOURNAL OF MATERIALS SCIENCE LETTERS 21, 2002, 251 255 Organic-inorganic sol-gel coating for corrosion protection  

E-Print Network (OSTI)

for corrosion protection of stainless steel T. P. CHOU Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA E-mail: gzcao@u.washington.edu One of the most effective corrosion example. This is the main reason for the durability and corrosion resistance be- havior of this particular

Cao, Guozhong

286

WHAT IS COMPOST? Composting refers to the biological decomposition and stabilization of organic materials by microorganisms under  

E-Print Network (OSTI)

. The blending of compost with wood chips as an erosion-control blanket material may reduce the amount process, biologically produced heat under proper moisture and aeration conditions, accelerates. #12;analyze the nutrient (N, P, K and other micronutrients), pH and soluble salt content

Mukhtar, Saqib

287

Quasiferromagnetism in semiconductors  

SciTech Connect

Ferromagnetic hysteresis has been observed at room temperature in materials not consisting of elements commonly associated with ferromagnetism, such as Co, Ni, Fe, or Mn-containing alloys. In particular, we report on magnetic hysteresis seen in silicon prepared by two different techniques: ion implantation (Si and Ar) and neutron irradiation. Because the material investigated contains no ferromagnetic elements, we tentatively call it ''quasiferromagnetic.'' The paramagnetic defects present in these materials were investigated using electron paramagnetic resonance. We suggest that these defects are one of the factors responsible for the observed macroscopic magnetic hysteresis loop.

Dubroca, T.; Hack, J.; Hummel, R.E.; Angerhofer, A. [Department of Materials Science and Engineering, University of Florida, Rhines Hall room 106, Gainesville, Florida 32611 (United States); Department of Chemistry, University of Florida, P.O. Box 117200, Gainesville, Florida 32611 (United States)

2006-05-01T23:59:59.000Z

288

Synthetic Design of New Metal-Organic Framework Materials for Hydrogen Storage - DOE Hydrogen and Fuel Cells Program FY 2012 Annual Progress Report  

NLE Websites -- All DOE Office Websites (Extended Search)

9 9 FY 2012 Annual Progress Report DOE Hydrogen and Fuel Cells Program Pingyun Feng (Primary Contact), Qipu Lin, Xiang Zhao Department of Chemistry University of California Riverside, CA 92521 Phone: (951) 827-2042 Email: pingyun.feng@ucr.edu DOE Program Officer: Dr. Michael Sennett Phone: (301) 903-6051 Email: Michael.Sennett@science.doe.gov Objectives Design and * synthesize new metal-organic framework materials using lightweight chemical elements to help improve gravimetric hydrogen storage capacity. Develop new synthetic strategies to generate novel * active binding sites on metal ions and ligands to enhance solid-gas interactions for increased uptake near ambient conditions.

289

Method of making silicon on insalator material using oxygen implantation  

DOE Patents (OSTI)

The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

Hite, Larry R. (Dallas, TX); Houston, Ted (Richardson, TX); Matloubian, Mishel (Dallas, TX)

1989-01-01T23:59:59.000Z

290

Non-fullerene acceptors for organic solar cells  

Science Journals Connector (OSTI)

Solar cells based on organic semiconductor molecules are a promising alternative to ... simple production, and good mechanical properties. Effective organic photocells are based on a heterojunction using an activ...

V. A. Trukhanov; D. Yu. Paraschuk

2014-09-01T23:59:59.000Z

291

Development of New Absorber Materials to Achieve Organic Photovoltaic Commercial Modules with 15% Efficiency and 20 Years Lifetime: Cooperative Research and Development Final Report, CRADA Number CRD-12-498  

SciTech Connect

Under this CRADA the parties will develop intermediates or materials that can be employed as the active layer in dye sensitized solar cells printed polymer systems, or small molecule organic photovoltaics.

Olson, D.

2014-08-01T23:59:59.000Z

292

Optical Properties and Potential Applications of Doped Semiconductor...  

NLE Websites -- All DOE Office Websites (Extended Search)

Optical Properties and Potential Applications of Doped Semiconductor Nanoparticles. Optical Properties and Potential Applications of Doped Semiconductor Nanoparticles. Abstract:...

293

Electromagnetic compatibility in semiconductor manufacturing  

SciTech Connect

Electromagnetic Interference (EMI) causes problems in semiconductor manufacturing facilities that range from nuisances to major disruptions of production. In many instances, these issues are addressed in a reactionary rather than proactive manner by individuals who do not have the experience or the equipment necessary to combat EMI problems in a timely, cost effective manner. This approach leads to expensive retrofits, reduced equipment availability, long recovery times, and in some cases, line yield impacts. The goal of electromagnetic compatibility (EMC) in semiconductor manufacturing is to ensure that semiconductor process, metrology, and support equipment operate as intended without being affected by electromagnetic disturbances either transmitted through air (radiated interference), or transferred into the equipment via a conductive media (conducted interference). Rather than being neglected until serious issues arise, EMC should be considered in the early stages of facility design, in order to gain the most benefit at the lowest cost.

Montoya, J.A. [Intel Corp., Hillsboro, OR (United States)

1995-12-31T23:59:59.000Z

294

The predicted crystal structure of Li4C6O6, an organic cathode material for Li-ion batteries, from first-principles multi-level computational methods  

E-Print Network (OSTI)

The predicted crystal structure of Li4C6O6, an organic cathode material for Li-ion batteries, from details for the electrochemical properties of these organic electrodes (chemical potential for Li ion the optimum positions of Li ions intercalated within each C6O6 framework. 3. We then optimized each

Goddard III, William A.

295

Semiconductor nanocrystal-based phagokinetic tracking  

DOE Patents (OSTI)

Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

2014-11-18T23:59:59.000Z

296

Semiconductor electrode with improved photostability characteristics  

DOE Patents (OSTI)

An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

Frank, A.J.

1985-02-19T23:59:59.000Z

297

Soft X-ray spectromicroscopy and its application to semiconductor microstructure characterization  

SciTech Connect

The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An ALS {mu}-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers.

Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z. [and others

1996-05-01T23:59:59.000Z

298

Semiconductor Radiation Detectors  

Science Journals Connector (OSTI)

...detector in which the material is not fully depleted. 284 SCIENCE, VOL. 170 (77 K), reduces...isotopes produced in fragmentation of uranium nuclei by 5-Gev protons as observed...staff of the U.S. De-partment of Health, Education, and Welfare National Air...

Fred S. Goulding; Yvonne Stone

1970-10-16T23:59:59.000Z

299

Monolayer Semiconductors Gilbert Arias  

E-Print Network (OSTI)

to be successfully and reliably isolated is graphene, which has received a lot of attention due to the fact, the electrical tunability and valley physics of these materials can be observed. 2 Monolayer Transistors 2 onto a tape, and then sticking this tape onto some kind of Silicon wafer. When the tape is peele

Washington at Seattle, University of - Department of Physics, Electroweak Interaction Research Group

300

Hybrid high-temperature superconductor-semiconductor tunnel diode  

E-Print Network (OSTI)

We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+{\\delta} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal material junction, and similar to spectra obtained in scanning tunneling microscopy. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+{\\delta} combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials and quantum technology applications.

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

2013-01-09T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode  

Science Journals Connector (OSTI)

We report the demonstration of hybrid high-Tc-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-Tc-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+? combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+? combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

2012-12-27T23:59:59.000Z

302

Mechanical scriber for semiconductor devices  

DOE Patents (OSTI)

A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

Lin, P.T.

1985-03-05T23:59:59.000Z

303

Field of Expertise Materials Science  

E-Print Network (OSTI)

structure-property relationships through the characterisation of diverse materials to process optimisation and international research partners in order to keep Austrian high-technology industry, scientific production semiconductors Paper and physical chemistry principles of paper strength Metallic materials for energy applica

304

Joining of dissimilar materials  

DOE Patents (OSTI)

A method of joining dissimilar materials having different ductility, involves two principal steps: Decoration of the more ductile material's surface with particles of a less ductile material to produce a composite; and, sinter-bonding the composite produced to a joining member of a less ductile material. The joining method is suitable for joining dissimilar materials that are chemically inert towards each other (e.g., metal and ceramic), while resulting in a strong bond with a sharp interface between the two materials. The joining materials may differ greatly in form or particle size. The method is applicable to various types of materials including ceramic, metal, glass, glass-ceramic, polymer, cermet, semiconductor, etc., and the materials can be in various geometrical forms, such as powders, fibers, or bulk bodies (foil, wire, plate, etc.). Composites and devices with a decorated/sintered interface are also provided.

Tucker, Michael C; Lau, Grace Y; Jacobson, Craig P

2012-10-16T23:59:59.000Z

305

Fabrication of photonic band gap materials  

DOE Patents (OSTI)

A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microspheres, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microspheres therefrom. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microspheres may be polystyrene microspheres.

Constant, Kristen (Ames, IA); Subramania, Ganapathi S. (Ames, IA); Biswas, Rana (Ames, IA); Ho, Kai-Ming (Ames, IA)

2002-01-15T23:59:59.000Z

306

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents (OSTI)

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, R.B.

1987-05-01T23:59:59.000Z

307

Dilute Magnetic Semiconductors from Electrodeposited ZnO Nanowires...  

NLE Websites -- All DOE Office Websites (Extended Search)

Terrestrial & Subsurface Ecosystems Instruments: Time of Flight Secondary Ion (TOF SIMS) Mass Spectrometer Tags: organic materials thin films soils Volume: 248 Issue: 2 Pages:...

308

Materials Science & Tech Division | Advanced Materials | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

Supporting Organizations Supporting Organizations Center for Nanophase Materials Sciences Chemical Sciences Division Materials Science and Technology BES Chemical Sciences, Geosciences, and Biosciences Program BES Materials Sciences and Engineering Program Joint Institute For Advanced Materials Advanced Materials Home | Science & Discovery | Advanced Materials | Supporting Organizations | Materials Science and Technology SHARE Materials Science and Technology Division The Materials Science and Technology Division is unique within the Department of Energy (DOE) System with mission goals that extend from fundamental materials science to applied materials science and technology. One key component of the division is a strong Basic Energy Sciences (BES) portfolio that pushes the frontiers of materials theory, synthesis

309

Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide  

E-Print Network (OSTI)

Scientic findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last few ...

Pereira, LMC; Wahl, U

310

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application  

DOE Patents (OSTI)

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Hansen, W.L.; Haller, E.E.

1980-09-19T23:59:59.000Z

311

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2012-08-07T23:59:59.000Z

312

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2011-10-11T23:59:59.000Z

313

Cathodoluminescence investigation of organic materials  

Science Journals Connector (OSTI)

......light exposure (C4). Considering the resistance to e-beams, we have chosen the compounds...destruction of molecules because a strong electric field induced by the charging enhances...charge distribution was 0.3e (e is the elementary charge) at C-H bonds for perylene......

Jun-ichi Niitsuma; Hidetoshi Oikawa; Eiji Kimura; Tatsuo Ushiki; Takashi Sekiguchi

2005-08-01T23:59:59.000Z

314

E-Print Network 3.0 - advanced packaging materials Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

and Technology Council (WTERT) Collection: Renewable Energy 22 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

315

E-Print Network 3.0 - advanced materials development Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Laboratory Fossil Energy Program Collection: Fossil Fuels 84 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

316

E-Print Network 3.0 - advanced materials technology Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Center, University of Missouri-Rolla Collection: Engineering 16 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

317

E-Print Network 3.0 - advanced technological materials Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

Center, University of Missouri-Rolla Collection: Engineering 16 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

318

Photon Statistics of Semiconductor Light Sources.  

E-Print Network (OSTI)

??In recent years, semiconductor light sources have become more and more interesting in terms of applications due to their high efficiency and low cost. Advanced… (more)

Aßmann, Marc

2010-01-01T23:59:59.000Z

319

Earth-abundant semiconductors for photovoltaic applications ...  

NLE Websites -- All DOE Office Websites (Extended Search)

Earth-abundant semiconductors for photovoltaic applications Thin film photovoltaics (solar cells) has the potential to revolutionize our energy landscape by producing clean,...

320

Wide Bandgap Semiconductors for Clean Energy Workshop  

Energy.gov (U.S. Department of Energy (DOE))

A workshop on Wide Bandgap (WBG) Semiconductors for Clean Energy (held July 25, 2012, in Chicago, Illinois) brought together stakeholders from industry and academia to discuss the technical status of WBG semiconductors. The workshop also explored emerging WBG market applications in clean energy and barriers to the development and widespread commercial use of WBG semiconductors. Improving the quality and reliability of WBG semiconductors—and reducing their manufacturing costs—could accelerate their use in automotive, power electronics, solid-state lighting, and other clean energy applications.

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Low Energy Ion Implantationin Semiconductor Manufacturing | U...  

Office of Science (SC) Website

Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Applications of Nuclear Science...

322

Climate VISION: Private Sector Initiatives: Semiconductors: Work...  

Office of Scientific and Technical Information (OSTI)

Plans The Semiconductor Industry Association has finalized its work plan with the collaboration of EPA. The plan describes actions the industry intends to take to achieve its...

323

CCEC Seminar Wireless Sensors for SemiconductorWireless Sensors for Semiconductor  

E-Print Network (OSTI)

CCEC Seminar Wireless Sensors for SemiconductorWireless Sensors for Semiconductor Manufacturing perhaps. In this talk, we describe our efforts in developing a new class of wireless sensors for use in semiconductor manufacturing. These sensors are fully self-contained with on board power, communications

Akhmedov, Azer

324

Hydrogen in semiconductors and insulators  

E-Print Network (OSTI)

type can be applied to hydrogen storage materials. Keywords:can be applied to hydrogen storage materials. Manuscript O-of the formalism to hydrogen storage materials. A partial

Van de Walle, Chris G.

2007-01-01T23:59:59.000Z

325

Optic probe for semiconductor characterization  

DOE Patents (OSTI)

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

Sopori, Bhushan L. (Denver, CO); Hambarian, Artak (Yerevan, AM)

2008-09-02T23:59:59.000Z

326

Materials Synthesis from Atoms to Systems | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

Porous Materials Thin Film Deposition Single Crystal Growth Texture Control Additive Manufacturing Nanomaterials Synthesis Designer Organic Molecules Related Research Materials...

327

Comments on the National Technology Roadmap for Semiconductors  

Science Journals Connector (OSTI)

The SIA National Technology Roadmap for Semiconductors (NTRS) [1] represents ... in defining a unified description of the semiconductor technology requirements for ensuring advancements in the performance ... an ...

James F. Freedman

1996-01-01T23:59:59.000Z

328

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal...  

NLE Websites -- All DOE Office Websites (Extended Search)

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition...

329

Engineering Density of States of Earth Abundant Semiconductors...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Density of States of Earth Abundant Semiconductors for Enhanced Thermoelectric Power Factor Engineering Density of States of Earth Abundant Semiconductors for Enhanced...

330

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Wednesday, 29 November 2006 00:00...

331

Wide Bandgap Semiconductors for Clean Energy Workshop Agenda  

Energy Savers (EERE)

Wide Bandgap Semiconductors for Clean Energy Workshop Wednesday, July 25, 2012 Hilton Rosemont O'Hare, Chicago, IL Introduction Wide bandgap (WBG) semiconductors operate at...

332

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronic...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for...

333

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronic...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power...

334

Inorganic-modified semiconductor TiO2 nanotube arrays for photocatalysis  

E-Print Network (OSTI)

or photoelectrochemical degradation of organic pollutants, the splitting of water into H2, and solar cells holds promise for meeting the global challenge of supplying clean energy. In this context, semiconductor TiO2 stands out and depletion of fossil fuel resources have emerged as two major obstacles for the sustainable development

Lin, Zhiqun

335

Cascade Organic Solar Cells  

Science Journals Connector (OSTI)

Cascade Organic Solar Cells ... Multiple factors control the efficiency of organic solar cells, making it difficult to use single donor or acceptor materials to balance the, often opposing, material properties required to optimize device performance. ... We demonstrate planar organic solar cells consisting of a series of complementary donor materials with cascading exciton energies, incorporated in the following structure: glass/indium-tin-oxide/donor cascade/C60/bathocuproine/Al. ...

Cody W. Schlenker; Vincent S. Barlier; Stephanie W. Chin; Matthew T. Whited; R. Eric McAnally; Stephen R. Forrest; Mark E. Thompson

2011-09-02T23:59:59.000Z

336

e! Science News Semiconductor manufacturing technique holds  

E-Print Network (OSTI)

arsenide chips manufactured in multilayer stacks: light sensors, high-speed transistors and solar cellse! Science News Semiconductor manufacturing technique holds promise for solar energy Published semiconductor manufacturing method pioneered at the University of Illinois, the future of solar energy just got

Rogers, John A.

337

Semiconductor heterojunction band offsets and charge neutrality  

E-Print Network (OSTI)

on semi- conductors A and B like Figure 3. 1, and commutativity of semiconductors A and B, i. e. , DEs(A ? B) = DE?(B ? A). (3. 33) We predict the charge neutrality levels &b, 4is and 4i, might align in semiconductors A, B and C as shown in Figure 3...

Lee, Chomsik

2012-06-07T23:59:59.000Z

338

Catalytic photooxidation of pentachlorophenol using semiconductor nanoclusters  

SciTech Connect

Pentachlorophenol (PCP) is a toxic chlorinated aromatic molecule widely used as fungicide, a bactericide and a wood preservation, and thus ubiquitous in the environment. The authors report photo-oxidation of PCP using a variety of nanosize semiconductor metal oxides and sulfides in both aqueous and polar organic solvents and compare the photo-oxidation kinetics of these nanoclusters to widely studied bulk powders like Degussa P-25 TiO{sub 2} and CdS. They study both the light intensity dependence of PCP photooxidation for nanosize SnO{sub 2} and the size dependence of PCP photooxidation for both nanosize SnO{sub 2} and MoS{sub 2}. They find an extremely strong size dependence for the latter which they attribute to its size-dependent band gap and the associated change in redox potentials due to quantum confinement of the hole-electron pair. The authors show that nanosize MoS{sub 2} with a diameter of d=3.0 nm and an absorbance edge of {approximately}450 nm is a very effective photooxidation catalyst for complete PCP mineralization, even when using only visible light irradiation.

WILCOXON,JESS P.

2000-04-17T23:59:59.000Z

339

Research on the electronic and optical properties of polymer and other organic molecular thin films  

SciTech Connect

The main goal of the work is to find materials and methods of optimization of organic layered electroluminescent cells and to study such properties of polymers and other organic materials that can be used in various opto-electronic devices. The summary of results obtained during the first year of work is presented. They are: (1) the possibility to produce electroluminescent cells using a vacuum deposition photoresist technology for commercial photoresists has been demonstrated; (2) the idea to replace the polyaryl polymers by other polymers with weaker hole conductivity for optimization of electroluminescent cells with ITO-Al electrodes has been suggested. The goal is to obtain amorphous processable thin films of radiative recombination layers in electroluminescent devices; (3) procedures of preparation of high-quality vacuum-deposited poly (p-phenylene) (PPP) films on various substrates have been developed; (4) it was found for the first time that the fluorescence intensity of PPP films depends on the degree of polymerization; (5) the role of interfaces between organic compounds, on one side, and metals or semiconductors, on the other side, has been studied and quenching of the fluorescence caused by semiconductor layer in thin sandwiches has been observed; (6) studies of the dynamics of photoexcitations revealed the exciton self-trapping in quasi-one-dimensional aggregates; and (7) conditions for preparation of highly crystalline fullerene C{sub 60} films by vacuum deposition have been found. Composites of C{sub 60} with conjugated polymers have been prepared.

NONE

1997-02-01T23:59:59.000Z

340

Recent progress in degradation and stabilization of organic solar cells  

SciTech Connect

Stability is of paramount importance in organic semiconductor devices, especially in organic solar cells (OSCs). Serious degradation in air limits wide applications of these flexible, light-weight and low-cost power-generation devices. Studying the stability of organic solar cells will help us understand degradation mechanisms and further improve the stability of these devices. There are many investigations into the efficiency and stability of OSCs. The efficiency and stability of devices even of the same photoactive materials are scattered in different papers. In particular, the extrinsic degradation that mainly occurs near the interface between the organic layer and the cathode is a major stability concern. In the past few years, researchers have developed many new cathodes and cathode buffer layers, some of which have astonishingly improved the stability of OSCs. In this review article, we discuss the recent developments of these materials and summarize recent progresses in the study of the degradation/stability of OSCs, with emphasis on the extrinsic degradation/stability that is related to the intrusion of oxygen and water. The review provides detailed insight into the current status of research on the stability of OSCs and seeks to facilitate the development of highly-efficient OSCs with enhanced stability.

Cao, Huanqi; He, Weidong; Mao, Yiwu; Lin, Xiao; Ishikawa, Ken; Dickerson, James H.; Hess, Wayne P.

2014-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

High-Throughput Transfer Imprinting for Organic Semiconductors  

E-Print Network (OSTI)

focused infrared laser heats stamping layer(PMMA) up to glass transition temperature within very short time. And the pressure applied through the roller presses the flat mold and the pattern is imprinted on the PMMA layer. This method can imprint... with higher speed and achieved wider area of imprinting than conventional imprint method. [17] MOLD Substrate PMMA IR Roller Figure 8 Concept of roller imprinting based on focus infrared heating. 17 CHAPTER II PROBLEM STATEMENT...

Choo, Gihoon

2013-08-06T23:59:59.000Z

342

On transport mechanisms in solar cells involving organic semiconductors.  

E-Print Network (OSTI)

??El conocimiento del mecanismo de transporte o de conducción en las células solares es útil para identificar las pérdidas eléctricas. En esta tesis, se han… (more)

Nolasco Montaño, Jairo César

2011-01-01T23:59:59.000Z

343

Electroluminescence in ion gel gated organic polymer semiconductor transistors  

E-Print Network (OSTI)

Harsha (N. Shastri), without whom I wouldn’t call myself complete, and am filled with gratitude to the cause that has brought us together, be it the god or that nature of probability function or the free will. Abstract This thesis reports the light... . The presence of a positive or negative charge causes a local structural relaxation of the polymer chain around the charge due to electron-phonon coupling similar to that of an exciton. This quasi-particle (spin = 1/2) of a charge and a lattice distortion...

Bhat, Shrivalli

2011-07-12T23:59:59.000Z

344

Timelines | Critical Materials Institute  

NLE Websites -- All DOE Office Websites (Extended Search)

of interest to rare earths and critical materials, organized by those specific to rare earth elements, general chemistry and uses. Timelines of rare earth discovery: Discovery and...

345

Acoustic-phonon propagation in rectangular semiconductor nanowires with elastically dissimilar barriers  

E-Print Network (OSTI)

Engineering, University of California--Riverside, Riverside, California 92521, USA Received 15 February 2005 dissimilar materials. As example systems, we have considered GaN nanowires with AlN and plastic barrier­5 The modification of the acoustic phonon dispersion in semiconductor superlattices has been mostly studied, both

346

A Hybrid Life Cycle Inventory of Nano-Scale Semiconductor Manufacturing  

Science Journals Connector (OSTI)

A Hybrid Life Cycle Inventory of Nano-Scale Semiconductor Manufacturing ... There is a need to both quantify unit process emissions and the impacts of auxiliary equipment at the facility scale; (iii) There is a need for streamlined methodologies to assess upstream impacts of manufacturing chemicals, materials and equipment infrastructure. ...

Nikhil Krishnan; Sarah Boyd; Ajay Somani; Sebastien Raoux; Daniel Clark; David Dornfeld

2008-03-19T23:59:59.000Z

347

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films  

E-Print Network (OSTI)

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films A. Bulusu and D. G. Walker1 Interdisciplinary Program in Material Science Vanderbilt University Nashville on device characteristics of 1D and 2D thin film superlattices whose applications include thermoelectric

Walker, D. Greg

348

FY08 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)  

SciTech Connect

This is the annual report for an old project funded by NA22. The purpose of the project was to develop amorphous semiconductors for use as radiation detectors. The annual report contains information about the progress made in synthesizing, characterizing, and radiation response testing of these new materials.

Johnson, Bradley R.; Riley, Brian J.; Crum, Jarrod V.; Ryan, Joseph V.; Sundaram, S. K.; McCloy, John S.; Rockett, Angus

2009-02-01T23:59:59.000Z

349

Energy Management in Semiconductor Cleanrooms  

NLE Websites -- All DOE Office Websites (Extended Search)

6 6 Energy Management in Semiconductor Cleanrooms Cleanrooms are used extensively in the manufacturing of integrated circuits and in the biological and pharmaceutical industries. For particle concentrations to remain low, for example, less than 100 particles/ft3 at >0.5 micrometers (Class 100), the air in the cleanroom must be filtered. Typically, the air is circulated through high-efficiency particulate air (HEPA) filters at a very high rate, such as 400 to 600 room air volumes per hour, to maintain low particle concentrations. The combined effect of high recirculation and a high pressure drop through HEPA filters is higher power costs per unit floor area to operate the cleanroom than to ventilate a commercial building. Cleanrooms are usually ventilated constantly and

350

Boron doping a semiconductor particle  

DOE Patents (OSTI)

A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

Stevens, Gary Don (18912 Ravenglen Ct., Dallas, TX 75287); Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094); Brown, Louanne Kay (2530 Poplar Tr., Garland, TX 75042)

1998-06-09T23:59:59.000Z

351

Heating device for semiconductor wafers  

DOE Patents (OSTI)

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Vosen, Steven R. (Berkeley, CA)

1999-01-01T23:59:59.000Z

352

Heating device for semiconductor wafers  

DOE Patents (OSTI)

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

Vosen, S.R.

1999-07-27T23:59:59.000Z

353

Amorphous Silicon as Semiconductor Material for High Resolution LAPS  

E-Print Network (OSTI)

-08 3.E -08 0 200 400 600 800 displacem ent/µµµµm current/A 1000 2000 3000 4000 1000 2000 3000 4000-substrate Amorphous silicon -4 -2 0 2 4 0,2 0,4 0,6 0,8 1,0 photocurrenta.u. gate voltage/V 600µm x 600µm area scan

Moritz, Werner

354

Photocell utilizing a wide-bandgap semiconductor material  

DOE Patents (OSTI)

A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.

Carlson, David E. (Yardley, PA); Williams, Brown F. (Princeton, NJ)

1984-06-05T23:59:59.000Z

355

Scanning probe characterization of novel semiconductor materials and devices  

E-Print Network (OSTI)

surf where q is the fundamental electronic charge magnitude,m * , where q is the fundamental electronic charge and m *

Zhou, Xiaotian

2007-01-01T23:59:59.000Z

356

AgBiS2 Semiconductor-Sensitized Solar Cells  

Science Journals Connector (OSTI)

AgBiS2 Semiconductor-Sensitized Solar Cells ... We present a new ternary semiconductor sensitizer-AgBiS2 for solar cells. ... Liquid-junction semiconductor-sensitized solar cells were fabricated from the synthesized AgBiS2 semiconductor. ...

Pen-Chi Huang; Wei-Chih Yang; Ming-Way Lee

2013-08-16T23:59:59.000Z

357

Transport Equations for Semiconductors Prof. Dr. Ansgar Jungel  

E-Print Network (OSTI)

- cations have been invented; for instance, semiconductor lasers, solar cells, light-emitting diodes (LED

Jüngel, Ansgar

358

Diluted magnetic semiconductor nanowires exhibiting magnetoresistance  

DOE Patents (OSTI)

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

Yang, Peidong (El Cerrito, CA); Choi, Heonjin (Seoul, KR); Lee, Sangkwon (Daejeon, KR); He, Rongrui (Albany, CA); Zhang, Yanfeng (El Cerrito, CA); Kuykendal, Tevye (Berkeley, CA); Pauzauskie, Peter (Berkeley, CA)

2011-08-23T23:59:59.000Z

359

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS, INC. FOR AN ADVANCE WAIVER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

OSRAM OPTO SEMICONDUCTORS, INC. FOR AN ADVANCE WAIVER OSRAM OPTO SEMICONDUCTORS, INC. FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC26-04NT41947; W(A)-04-021, CH-1190 The Petitioner, Osram Opto Semiconductors (Osram), was awarded this cooperative agreement for the performance of work entitled, "Polymer OLED White Light Development Program." In this program, Osram will develop, fabricate, and fully characterize a 12-inch square OLED (Organic Light Emitting Diode) white light prototype. The prototype will be based on use of multiple discrete 3-inch square white light devices fabricated on glass substrates. A broadband light-emitting co-polymer for the generation of white light, from either a single large area emitting film, or from a relatively small number of segmented emitting films will be used. An alternate

360

Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser  

E-Print Network (OSTI)

reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser powers [1,2]. However the poor thermal conductivity of III-V materials might prevent an efficient heat by bonding it to a material of high thermal conductivity and good optical quality [2,4,5]. In this work we

Boyer, Edmond

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Mospec Semiconductor Corp | Open Energy Information  

Open Energy Info (EERE)

Mospec Semiconductor Corp Mospec Semiconductor Corp Jump to: navigation, search Name Mospec Semiconductor Corp Place Tainan, Taiwan Sector Solar Product Taiwanese semiconductor products producer; offers monocrystalline silicon wafers and as of April 2008, ingots for the solar industry. Coordinates 22.99721°, 120.180862° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":22.99721,"lon":120.180862,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

362

Hemlock Semiconductor Corp HSC | Open Energy Information  

Open Energy Info (EERE)

Hemlock Semiconductor Corp HSC Hemlock Semiconductor Corp HSC Jump to: navigation, search Name Hemlock Semiconductor Corp (HSC) Place Hemlock, Michigan Zip 48626 Sector Solar Product US-based manufacturer polycrystalline silicon for semiconductor and solar industries. Coordinates 39.589497°, -82.153275° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.589497,"lon":-82.153275,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

363

Climate VISION: Private Sector Initiatives: Semiconductors  

Office of Scientific and Technical Information (OSTI)

Letters of Intent/Agreements Letters of Intent/Agreements The U.S. semiconductor industry, represented by the members of the Environmental Protection Agency's PFC Reduction/Climate Partnership for the Semiconductor Industry, has committed to reduce absolute perfluorocompound (PFC) emissions by 10% below the 1995 baseline level by the year 2010. Perfluorocompounds include the most potent and long-lived greenhouse gases such as perfluorocarbons (e.g., CF4, C2F6, C3F8), trifluoromethane (CHF3), nitrogen trifluoride (NF3), and sulfur hexafluoride (SF6). The Environmental Protection Agency's (EPA) voluntary semiconductor industry partnership was developed collaboratively with the Semiconductor Industry Association (SIA). EPA, SIA, and the Partner companies (listed below) are working to reduce industry greenhouse gas (GHG) emissions. EPA's

364

Narrow band gap amorphous silicon semiconductors  

DOE Patents (OSTI)

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Madan, A.; Mahan, A.H.

1985-01-10T23:59:59.000Z

365

Sandia National Laboratories: wide-bandgap semiconductor  

NLE Websites -- All DOE Office Websites (Extended Search)

electroluminescence was first reported by H.J. Round in 1907, and the first light-emitting diode (LED) was reported by O.V. Losev in 1927. Not until the birth of semiconductor...

366

ITRS: The International Technology Roadmap for Semiconductors  

Science Journals Connector (OSTI)

In a move singular for the world’s industry, the semiconductor industry established a quantitative strategy for its progress with the establishment of the ITRS. In its 17th year, it has been extended in 2009 t...

Bernd Hoefflinger

2012-01-01T23:59:59.000Z

367

Thermovoltaic semiconductor device including a plasma filter  

DOE Patents (OSTI)

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Baldasaro, Paul F. (Clifton Park, NY)

1999-01-01T23:59:59.000Z

368

Gaining creative control over semiconductor nanowires  

NLE Websites -- All DOE Office Websites (Extended Search)

Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Using a microfluidic reactor, Los Alamos researchers transformed the SLS process into a flow-based technique. September 26, 2013 Growth of nanowire precursors in a flowing carrier solvent Growth of nanowire precursors in a flowing carrier solvent The new "flow" solution-liquid-solid method allows scientists to slow down growth and thereby capture mechanistic details as the nanowires grow in solution. A Los Alamos research team has transformed the synthesis process of semiconductor nanowires for use in solar cells, batteries, electronics, sensors and photonics using a solution-liquid-solid (SLS) batch approach to achieve unprecedented control over growth rates, nanowire size and internal

369

Semiconductor Nanowires: Opportunities and Challenges  

E-Print Network (OSTI)

Biosketch: Tim Sands holds a joint appointment in Materials Engineering and Electrical & Computer Engineering at Purdue University. Before joining the faculty ...

370

Predicted band structures of III-V semiconductors in the wurtzite phase  

SciTech Connect

While non-nitride III-V semiconductors typically have a zinc-blende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier ab initio calculations, and where experimental results are available (InP, InAs, and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may facilitate the development of spin-based devices.

De, A.; Pryor, Craig E. [Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242 (United States)

2010-04-15T23:59:59.000Z

371

Growth condition and bacterial community for maximum hydrolysis of suspended organic materials in anaerobic digestion of food waste-recycling wastewater  

Science Journals Connector (OSTI)

This paper reports the effects of changing pH (5–7) and temperature (T..., 40–60 °C) on the efficiencies of bacterial hydrolysis of suspended organic matter (SOM) in wastewater from food waste recycling (FWR) and...

Man Deok Kim; Minkyung Song; Minho Jo…

2010-02-01T23:59:59.000Z

372

All-optical logic gates based on vertical cavity semiconductor optical amplifiers  

E-Print Network (OSTI)

in International Technology Roadmap for Semiconductors 2007in International Technology Roadmap for Semiconductors 2007The 2007 International Technology Roadmap for Semiconductors

Gauss, Veronica Andrea

2009-01-01T23:59:59.000Z

373

E-Print Network 3.0 - area semiconductor laser Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

areas of semiconductor... for conducting research on wide bandgap semiconductor optoelectronics in my research group, within the Center... bandgap III-Nitride semiconductor...

374

Methods for manufacturing monocrystalline or near-monocrystalline cast materials  

DOE Patents (OSTI)

Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.

Stoddard, Nathan G

2014-04-29T23:59:59.000Z

375

Porous Diblock Copolymer Thin Films in High-Performance Semiconductor Microelectronics  

SciTech Connect

The engine fueling more than 40 years of performance improvements in semiconductor integrated circuits (ICs) has been industry's ability to pattern circuit elements at ever-higher resolution and with ever-greater precision. Steady advances in photolithography - the process wherein ultraviolet light chemically changes a photosensitive polymer resist material in order to create a latent image - have resulted in scaling of minimum printed feature sizes from tens of microns during the 1980s to sub-50 nanometer transistor gate lengths in today's state-of-the-art ICs. The history of semiconductor technology scaling as well as future technology requirements is documented in the International Technology Roadmap for Semiconductors (ITRS). The progression of the semiconductor industry to the realm of nanometer-scale sizes has brought enormous challenges to device and circuit fabrication, rendering performance improvements by conventional scaling alone increasingly difficult. Most often this discussion is couched in terms of field effect transistor (FET) feature sizes such as the gate length or gate oxide thickness, however these challenges extend to many other aspects of the IC, including interconnect dimensions and pitch, device packing density, power consumption, and heat dissipation. The ITRS Technology Roadmap forecasts a difficult set of scientific and engineering challenges with no presently-known solutions. The primary focus of this chapter is the research performed at IBM on diblock copolymer films composed of polystyrene (PS) and poly(methyl-methacrylate) (PMMA) (PS-b-PMMA) with total molecular weights M{sub n} in the range of {approx}60K (g/mol) and polydispersities (PD) of {approx}1.1. These materials self assemble to form patterns having feature sizes in the range of 15-20nm. PS-b-PMMA was selected as a self-assembling patterning material due to its compatibility with the semiconductor microelectronics manufacturing infrastructure, as well as the significant body of existing research on understanding its material properties.

Black, C.T.

2011-02-01T23:59:59.000Z

376

Sputter deposition of semiconductor superlattices for thermoelectric applications  

SciTech Connect

Theoretical dramatic improvement of the thermoelectric properties of materials by using quantum confinement in novel semiconductor nanostructures has lead to considerable interest in the thermoelectric community. Therefore, we are exploring the critical materials issues for fabrication of quantum confined structures by magnetron sputtering in the lead telluride and bismuth telluride families of materials. We have synthesized modulated structures from thermoelectric materials with bilayer periods of as little as 3.2 nm and shown that they are stable at deposition temperatures high enough to grow quality films. Issues critical to high quality film growth have been investigated such as nucleation and growth conditions and their effect on crystal orientation and growth morphology. These investigations show that nucleating the film at a temperature below the growth temperature of optimum electronic properties produces high quality films. Our work with sputter deposition, which is inherently a high rate deposition process, builds the technological base necessary to develop economical production of these advanced materials. High deposition rate is critical since, even if efficiencies comparable with CFC based refrigeration systems can be achieved, large quantities of quantum confined materials will be necessary for cost-competitive uses.

Wagner, A.V.; Foreman, R.J.; Farmer, J.C.; Barbee, T.W.

1996-11-01T23:59:59.000Z

377

Advanced Materials | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

Research Areas Research Areas Research Highlights Facilities and Capabilities Science to Energy Solutions News & Awards Events and Conferences Supporting Organizations Directionally Solidified Materials Using high-temperature optical floating zone furnace to produce monocrystalline molybdenum alloy micro-pillars Home | Science & Discovery | Advanced Materials Advanced Materials | Advanced Materials SHARE ORNL has the nation's most comprehensive materials research program and is a world leader in research that supports the development of advanced materials for energy generation, storage, and use. We have core strengths in three main areas: materials synthesis, characterization, and theory. In other words, we discover and make new materials, we study their structure,

378

Influence of Wetting and Mass Transfer Properties of Organic Chemical Mixtures in Vadose Zone Materials on Groundwater Contamination by Nonaqueous Phase Liquids  

SciTech Connect

Previous studies have found that organic acids, organic bases, and detergent-like chemicals change surface wettability. The wastewater and NAPL mixtures discharged at the Hanford site contain such chemicals, and their proportions likely change over time due to reaction-facilitated aging. The specific objectives of this work were to (1) determine the effect of organic chemical mixtures on surface wettability, (2) determine the effect of organic chemical mixtures on CCl4 volatilization rates from NAPL, and (3) accurately determine the migration, entrapment, and volatilization of organic chemical mixtures. Five tasks were proposed to achieve the project objectives. These are to (1) prepare representative batches of fresh and aged NAPL-wastewater mixtures, (2) to measure interfacial tension, contact angle, and capillary pressure-saturation profiles for the same mixtures, (3) to measure interphase mass transfer rates for the same mixtures using micromodels, (4) to measure multiphase flow and interphase mass transfer in large flow cell experiments, all using the same mixtures, and (5) to modify the multiphase flow simulator STOMP in order to account for updated P-S and interphase mass transfer relationships, and to simulate the impact of CCl4 in the vadose zone on groundwater contamination. Results and findings from these tasks and summarized in the attached final report.

Charles J Werth; Albert J Valocchi, Hongkyu Yoon

2011-05-21T23:59:59.000Z

379

Light sources based on semiconductor current filaments  

DOE Patents (OSTI)

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Buttram, Malcolm T. (Sandia Park, NM); Mar, Alan (Albuquerque, NM); Helgeson, Wesley D. (Albuquerque, NM); O'Malley, Martin W. (Edgewood, NM); Hjalmarson, Harold P. (Albuquerque, NM); Baca, Albert G. (Albuquerque, NM); Chow, Weng W. (Cedar Crest, NM); Vawter, G. Allen (Albuquerque, NM)

2003-01-01T23:59:59.000Z

380

Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics  

SciTech Connect

The principal goal in the field of high-Tc ferromagnetic semiconductors is the synthesis, characterization and utilization of semiconductors which exhibit substantial carrier spin polarization at and above room temperature. Such materials are of critical importance in the emerging field of semiconductor spintronics. The interaction leading to carrier spin polarization, exchange coupling between the dopant spins and the valence or conduction band, is known to be sufficiently weak in conventional semiconductors, such as GaAs and Si, that magnetic ordering above cryogenic temperatures is essentially impossible. Since the provocative theoretical predictions of Tc above ambient in p-Mn:ZnO and p-Mn:GaN (T. Dietl et al., Science 287 1019 (2000)), and the observation of room-temperature ferromagnetism in Co:TiO2 anatase (Y. Matsumoto et al., Science 291 854 (2001)), there has been a flurry of work in oxides and nitrides doped with transition metals with unpaired d electrons. It has even been claimed that room-temperature ferromagnetism can be obtained in certain d0 transition metals oxides without a dopant. In this Report, the field of transition metal doped oxides and nitrides is critically reviewed and assessed from a materials science perspective. Since much of the field centers around thin film growth, this Report focuses on films prepared not only by conventional vacuum deposition methods, but also by spin coating colloidal nanoparticles.

Chambers, Scott A.

2006-10-01T23:59:59.000Z

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381

FY06 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)  

SciTech Connect

We describe progress in the development of new materials for portable, room-temperature, gamma-radiation detection at Pacific Northwest National Laboratory at the Hanford Site in Washington State. High Z, high resistivity, amorphous semiconductors are being designed for use as solid-state detectors at near ambient temperatures; principles of operation are analogous to single-crystal semiconducting detectors. Amorphous semiconductors have both advantages and disadvantages compared to single crystals, and this project is developing methods to mitigate technical problems and design optimized material for gamma detection. Several issues involved in the fabrication of amorphous semiconductors are described, including reaction thermodynamics and kinetics, the development of pyrolytic coating, and the synthesis of ingots. The characterization of amorphous semiconductors is described, including sectioning and polishing protocols, optical microscopy, X-ray diffraction, scanning electron microscopy, optical spectroscopy, particle-induced X-ram emission, Rutherford backscattering, and electrical testing. Then collaboration with the University of Illinois at Urbana-Champaign is discussed in the areas of Hall-effect measurements and current voltage data. Finally, we discuss the strategy for continuing the program.

Johnson, Bradley R.; Riley, Brian J.; Crum, Jarrod V.; Sundaram, S. K.; Henager, Charles H.; Zhang, Yanwen; Shutthanandan, V.

2007-01-01T23:59:59.000Z

382

Zecon Solar Semiconductor Inc | Open Energy Information  

Open Energy Info (EERE)

Zecon Solar Semiconductor Inc Zecon Solar Semiconductor Inc Jump to: navigation, search Name Zecon Solar & Semiconductor Inc Place Cupertino, California Zip 95014 Sector Solar Product Focused on large-scale solar building integrated PV systems. Coordinates 37.31884°, -122.029244° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.31884,"lon":-122.029244,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

383

Two-Photon Emission from Semiconductors  

E-Print Network (OSTI)

We report the first experimental observations of two-photon emission from semiconductors, to the best of our knowledge, and develop a corresponding theory for the room-temperature process. Spontaneous two-photon emission is demonstrated in optically-pumped bulk GaAs and in electrically-driven GaInP/AlGaInP quantum wells. Singly-stimulated two-photon emission measurements demonstrate the theoretically predicted two-photon optical gain in semiconductors - a necessary ingredient for any realizations of future two-photon semiconductor lasers. Photon-coincidence experiment validates the simultaneity of the electrically-driven GaInP/AlGaInP two-photon emission, limited only by detector's temporal resolution.

Alex Hayat; Pavel Ginzburg; Meir Orenstein

2007-10-25T23:59:59.000Z

384

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents (OSTI)

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1989-05-09T23:59:59.000Z

385

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents (OSTI)

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1987-10-23T23:59:59.000Z

386

Eyesafe pulsed microchip laser using semiconductor saturable absorber R. Fluck,a)  

E-Print Network (OSTI)

a metal-organic chemical vapor deposition MOCVD grown InGaAsP/InP semiconductor saturable absorber mirror an InGaAsP/InP SESAM to obtain a higher modulation depth than for an InGaAs/GaAs SESAM.15 The InGaAsP coupler and the SESAM. The ytterbium codoping of the glass makes possible the efficient absorption

Keller, Ursula

387

A New Cleanroom for a Next-Generation Semiconductor Research...  

NLE Websites -- All DOE Office Websites (Extended Search)

A New Cleanroom for a Next-Generation Semiconductor Research Tool A New Cleanroom for a Next-Generation Semiconductor Research Tool Print The new Sector 12 cleanroom under...

388

Lattice mismatched compound semiconductors and devices on silicon  

E-Print Network (OSTI)

III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and ...

Yang, Li, Ph. D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

389

Silicon Carbide Power Semiconductor Devices in the Cleanroom...  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Carbide Power Semiconductor Devices in the Cleanroom Silicon Carbide Power Semiconductor Devices in the Cleanroom Ron Olson 2012.10.04 I would like to introduce Zach Stum,...

390

DECENTRALIZING SEMICONDUCTOR CAPACITY PLANNING VIA INTERNAL MARKET COORDINATION  

E-Print Network (OSTI)

1 DECENTRALIZING SEMICONDUCTOR CAPACITY PLANNING VIA INTERNAL MARKET COORDINATION SULEYMAN KARABUK semiconductor manufacturer: marketing managers reserve capacity from manufacturing based on product demands, while attempting to maximize profit; manufacturing managers allocate capacity to competing marketing

Wu, David

391

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic  

E-Print Network (OSTI)

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic properties of optoelectronic properties of and uses for semi-insulating semiconductor heterostructures and thin films. The principal optical and optoelectronic properties of semi-insulating epilayers and heterostructures

Nolte, David D.

392

Taiwan Semiconductor Manufacturing Co Ltd TSMC | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Manufacturing Co Ltd TSMC Semiconductor Manufacturing Co Ltd TSMC Jump to: navigation, search Name Taiwan Semiconductor Manufacturing Co Ltd (TSMC) Place Hsinchu, Taiwan Zip 300 Sector Solar Product Taiwan-based semiconductor company. The firm is also venturing into solar and LED production. References Taiwan Semiconductor Manufacturing Co Ltd (TSMC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Taiwan Semiconductor Manufacturing Co Ltd (TSMC) is a company located in Hsinchu, Taiwan . References ↑ "Taiwan Semiconductor Manufacturing Co Ltd (TSMC)" Retrieved from "http://en.openei.org/w/index.php?title=Taiwan_Semiconductor_Manufacturing_Co_Ltd_TSMC&oldid=352012"

393

Method Of Transferring A Thin Crystalline Semiconductor Layer  

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Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure

394

Materials science aspects of coal  

Science Journals Connector (OSTI)

Natural organic materials are arrangements of linear aliphatic units and ring-like aromatic units arranged in a polymeric pattern. We show that fossilized organic materials such as coals and oil shale retain this polymeric character. We also show the polymeric nature of jet and amber fossilized organic matter used for centuries for ornamentation.

Charles Wert; Manfred Weller

2001-01-01T23:59:59.000Z

395

Experimental verification of Förster energy transfer between semiconductor quantum dots  

Science Journals Connector (OSTI)

In recent years, energy transfer (ET) using semiconductor quantum dots (QDs) is getting increased attention. However, it has been postulated that ET between QDs is based on the Förster model, which is a well-established model of ET mechanism in organic dye systems, without verification. In this work, we have investigated ET mechanism in colloidal CdS QDs measuring photoluminescence dynamics of a bilayer structure consisting of differently sized CdS QDs. In the bilayer structure, the distance between the monolayer of donor QDs and that of acceptor QDs was controlled precisely by a spacer layer that is layer-by-layer assembly of polyelectrolytes. The bilayer structure enabled us to systematically measure the spacer-layer dependence of photoluminescence dynamics reflecting the ET process between QDs. It is demonstrated that ET between the donor and acceptor QDs is conclusively dominated by the dipole-dipole interaction, which verifies the appropriateness of the Förster model.

DaeGwi Kim; Shinya Okahara; Masaaki Nakayama; YongGu Shim

2008-10-02T23:59:59.000Z

396

Semiconductor nanowires DOI: 10.1002/smll.200500094  

E-Print Network (OSTI)

of a semiconductor Si nanowire, synthesized via the VLS pro- cess, into metallic nickel silicide through parameters. Anisotropic growth of a metal onto a semiconductor nanowire (or a semicon- ductor on a metal approach to prepare metal/semiconductor nano- wire heterostructures by transforming specific sections

Rogers, John A.

397

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents (OSTI)

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

398

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors  

DOE Patents (OSTI)

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Madan, A.

1984-12-10T23:59:59.000Z

399

Novel theoretical and experimental approaches for understanding and optimizing hydrogen-sorbent interactions in metal organic framework materials - DOE Hydrogen and Fuel Cells Program FY 2012 Annual Progress Report  

NLE Websites -- All DOE Office Websites (Extended Search)

3 3 FY 2012 Annual Progress Report DOE Hydrogen and Fuel Cells Program Yves. J. Chabal (Primary Contact), Jing Li, Timo Thonhauser UT Dallas - Department of Materials Science and Engineering 800 W. Campbell Road, RL 10 Richardson, TX 75080 Phone: (972) 883-5751 Email: chabal@utdallas.edu DOE Program Officer: Dr. Bonnie Gersten Phone: (301) 903-0002 Email: Bonnie.Gersten@science.doe.gov Subcontractors: * Jing Li (Rutgers University) * Timo Thonhauser (Wake Forest University) Objectives Develop a * comprehensive understanding of how small molecules (e.g. H 2 ) bind inside metal organic framework

400

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

0001 0001 Transport and Kinetic Processes in GaN Epitaxial Lateral Overgrowth M. E. Coltrin and C. C. Mitchell Motivation-GaN is a wide band gap semi- conductor with a broad range of potential appli- cations, e.g., high-temperature electronics, op- telectronics, chemical or biological sensors. GaN thin films usually have a high defect den- sity, leading to poor performance. Epitaxial Lat- eral Overgrowth (ELO) has been shown to greatly reduce defect densities, often by factors of 100 or more. We are conducting fundamental studies of GaN growth kinetics during ELO. Accomplishment-In ELO, a mask pattern of dielectric material is deposited on top of a GaN buffer layer. Further growth of GaN occurs se- lectively on exposed areas of the underlying buffer layer, and not on the dielectric material.

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Semiconductor nanowires for photovoltaic and photoelectrochemical energy conversion  

SciTech Connect

Semiconductor nanowires (NW) possess several beneficial properties for efficient conversion of solar energy into electricity and chemical energy. Due to their efficient absorption of light, short distances for minority carriers to travel, high surface-to-volume ratios, and the availability of scalable synthesis methods, they provide a pathway to address the low cost-to-power requirements for wide-scale adaptation of solar energy conversion technologies. Here we highlight recent progress in our group towards implementation of NW components as photovoltaic and photoelectrochemical energy conversion devices. An emphasis is placed on the unique properties of these one-dimensional (1D) structures, which enable the use of abundant, low-cost materials and improved energy conversion efficiency compared to bulk devices.

Dasgupta, Neil; Yang, Peidong

2013-01-23T23:59:59.000Z

402

High gain photoconductive semiconductor switch having tailored doping profile zones  

DOE Patents (OSTI)

A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

Baca, Albert G. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Mar, Alan (Albuquerque, NM); Zutavern, Fred J (Albuquerque, NM); Hjalmarson, Harold P. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Zipperian, Thomas E. (Edgewood, NM); O'Malley, Martin W. (Edgewood, NM); Helgeson, Wesley D. (Albuquerque, NM); Denison, Gary J. (Sandia Park, NM); Brown, Darwin J. (Albuquerque, NM); Sullivan, Charles T. (Albuquerque, NM); Hou, Hong Q. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

403

High-Frequency Conductivity of Degenerate Semiconductors  

Science Journals Connector (OSTI)

The problem of high-frequency conductivity of a degenerate semiconductor is investigated by a kinetic description. The finite duration of encounters is taken into account in a self-consistent fashion which properly includes collective effects. This treatment is an extension for quantum plasmas of the Dawson-Oberman method given for classical plasmas.

Amiram Ron and Narkis Tzoar

1963-09-01T23:59:59.000Z

404

Semiconductor Nanowire Optical Antenna Solar Absorbers  

E-Print Network (OSTI)

technology. KEYWORDS Solar cell, semiconductor nanowires, optical antennas, photon management, light trapping a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach to exhibit a strongly angle-dependent optical response and the resulting solar cells require bulky solar

Fan, Shanhui

405

Semiconductor detectors with proximity signal readout  

SciTech Connect

Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

Asztalos, Stephen J. [XIA, LLC, Hayward, CA (United States)

2014-01-30T23:59:59.000Z

406

Defect Tolerant Semiconductors for Solar Energy Conversion  

Science Journals Connector (OSTI)

Defect Tolerant Semiconductors for Solar Energy Conversion ... He obtained his Ph.D. in Physics at Paris-Sud University where he modeled Hot Carrier Solar Cells by means of Ensemble Monte Carlo methods. ... These surface energies are significantly lower compared to 96 and 102 meV/Å2 for (1010) and (1120) low energy nonpolar GaN surfaces respectively. ...

Andriy Zakutayev; Christopher M. Caskey; Angela N. Fioretti; David S. Ginley; Julien Vidal; Vladan Stevanovic; Eric Tea; Stephan Lany

2014-03-13T23:59:59.000Z

407

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS  

E-Print Network (OSTI)

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS M.D. MCCLUSKEY* University) spectroscopy of hydrogen and deuterium in GaP, AlSb, ZnSe, and GaN has provided important information about the structures of dopant- hydrogen complexes and their interaction with the host lattice. In GaN:Mg, for example

McCluskey, Matthew

408

High resolution scintillation detector with semiconductor readout  

DOE Patents (OSTI)

A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

Levin, Craig S. (Santa Monica, CA); Hoffman, Edward J. (Los Angeles, CA)

2000-01-01T23:59:59.000Z

409

Direct computation of the packing entropy of granular materials  

E-Print Network (OSTI)

of granular materials Daniel A. Asenjo-Andrews Summary Granular materials are the second most manipulated material in industry after water and their properties are of great importance for the pharmaceutical, food, mechanosynthesis and semiconductor industries... substance is dispersed in another and may be solid, liquid or gaseous. Granular materials are of particular interest as they are the second most manipulated material in industry after water and can be found in the form of powders in pharmaceutical, food...

Asenjo-Andrews, Daniel

2014-06-10T23:59:59.000Z

410

Supporting Organizations | Nuclear Science | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

Educational Outreach Publications and Reports News and Awards Supporting Organizations Nuclear Science Engineering Fusion & Materials for Nuclear Systems Nuclear Science Home |...

411

Land Application of Organic Fertilizers or Amendments  

E-Print Network (OSTI)

Applying organic materials to your land can add beneficial nutrients to the soil. But when too much is applied, or when it is applied incorrectly, organic material can cause environmental problems. This publication will help you select the proper...

Harmel, Daren; Mechell, Justin; Lesikar, Bruce J.

2007-12-13T23:59:59.000Z

412

Enhanced von Weizsäcker Wang-Govind-Carter kinetic energy density functional for semiconductors  

SciTech Connect

We propose a new form of orbital-free (OF) kinetic energy density functional (KEDF) for semiconductors that is based on the Wang-Govind-Carter (WGC99) nonlocal KEDF. We enhance within the latter the semi-local von Weizsäcker KEDF term, which is exact for a single orbital. The enhancement factor we introduce is related to the extent to which the electron density is localized. The accuracy of the new KEDF is benchmarked against Kohn-Sham density functional theory (KSDFT) by comparing predicted energy differences between phases, equilibrium volumes, and bulk moduli for various semiconductors, along with metal-insulator phase transition pressures. We also compare point defect and (100) surface energies in silicon for a broad test of its applicability. This new KEDF accurately reproduces the exact non-interacting kinetic energy of KSDFT with only one additional adjustable parameter beyond the three parameters in the WGC99 KEDF; it exhibits good transferability between semiconducting to metallic silicon phases and between various III-V semiconductors without parameter adjustment. Overall, this KEDF is more accurate than previously proposed OF KEDFs (e.g., the Huang-Carter (HC) KEDF) for semiconductors, while the computational efficiency remains at the level of the WGC99 KEDF (several hundred times faster than the HC KEDF). This accurate, fast, and transferable new KEDF holds considerable promise for large-scale OFDFT simulations of metallic through semiconducting materials.

Shin, Ilgyou [Department of Chemistry, Princeton University, Princeton, New Jersey 08544-1009 (United States)] [Department of Chemistry, Princeton University, Princeton, New Jersey 08544-1009 (United States); Carter, Emily A., E-mail: eac@princeton.edu [Department of Mechanical and Aerospace Engineering, Program in Applied and Computational Mathematics, and Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544-5263 (United States)

2014-05-14T23:59:59.000Z

413

SETEC/Semiconductor Manufacturing Technologies Program: 1999 Annual and Final Report  

SciTech Connect

This report summarizes the results of work conducted by the Semiconductor Manufacturing Technologies Program at Sandia National Laboratories (Sandia) during 1999. This work was performed by one working group: the Semiconductor Equipment Technology Center (SETEC). The group's projects included Numerical/Experimental Characterization of the Growth of Single-Crystal Calcium Fluoride (CaF{sub 2}); The Use of High-Resolution Transmission Electron Microscopy (HRTEM) Imaging for Certifying Critical-Dimension Reference Materials Fabricated with Silicon Micromachining; Assembly Test Chip for Flip Chip on Board; Plasma Mechanism Validation: Modeling and Experimentation; and Model-Based Reduction of Contamination in Gate-Quality Nitride Reactor. During 1999, all projects focused on meeting customer needs in a timely manner and ensuring that projects were aligned with the goals of the National Technology Roadmap for Semiconductors sponsored by the Semiconductor Industry Association and with Sandia's defense mission. This report also provides a short history of the Sandia/SEMATECH relationship and a brief on all projects completed during the seven years of the program.

MCBRAYER,JOHN D.

2000-12-01T23:59:59.000Z

414

Materials Science & Engineering  

E-Print Network (OSTI)

. Aucierllo has edited 19 books, published about 450 articles, holds 14 patents, and has organized, chaired and nanocarbon thin films are providing the bases for new physics, new materials science and chemistry

415

Probing Nanostructures for Photovoltaics: Using atomic force microscopy and other tools to characterize nanoscale materials for harvesting solar energy  

E-Print Network (OSTI)

4.2.1 Organic solar cellOrganic Solar Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.3.1 Organic solar cell materials . . . . .

Zaniewski, Anna Monro

2012-01-01T23:59:59.000Z

416

Fabrication and Characterization of Organic Solar Cells  

E-Print Network (OSTI)

and  characterization of organic solar cells.  Advanced D, Meissner D.  Organic Solar?Cells.  Advanced Materials.  tin  oxide  for  organic solar cell.  Electr Eng Jpn.  2006 

Yengel, Emre

2010-01-01T23:59:59.000Z

417

Challenges and Opportunities in Thermoelectric Materials Research...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Nanocomposites, plus Overview of Research on Thermoelectric Materials and Devices in China NSFDOE Thermoelectric Partnership: Inorganic-Organic Hybrid Thermoelectrics...

418

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

Development of Cantilever Epitaxy to Produce High Quality GaN with Reduced Development of Cantilever Epitaxy to Produce High Quality GaN with Reduced Threading Dislocation Densities by C. C. Mitchell, A. A. Allerman, C. I. H. Ashby, R. D. Briggs, D. M. Follstadt, S. L. Lee, D. D. Koleske Motivation-GaN grown on any currently available substrates has an inherent problem of having to overcome a large lattice mismatch with the substrate. As a result typical planar GaN includes anywhere from 10 8 - 10 10 threading dislocations per square centimeter. Cantilever epitaxy (CE) is a technique developed to produce areas of GaN with a reduced number of vertical threading dislocations (VTDs) over large areas. Low defect materials are required to reduce leakage and breakdown of both electronic and opto- electronic devices. Accomplishment-This

419

Method of transferring strained semiconductor structure  

DOE Patents (OSTI)

The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

Nastasi, Michael A. (Santa Fe, NM); Shao, Lin (College Station, TX)

2009-12-29T23:59:59.000Z

420

"Magnetically dead" surface layers on ferromagnetic semiconductors  

Science Journals Connector (OSTI)

We perform an exact model calculation for the conduction-band spin structure of ferromagnetic semiconductors. The purpose of this illustrative quasiatomic theory (which is an abstraction of our earlier general theory) is to demonstrate that the case T=0 (i.e., ferromagnetic saturation) exhibits vanishingly small spectral weights of certain quasiparticle or scattering states which, however, become manifest for T>0, and determine the electron-spin polarization. Hence T=0 results cannot be generalized to nonzero temperatures and should not be used to prove or disprove the existence of "magnetically dead" surface layers on ferromagnetic semiconductors. The existence of such dead layers has frequently been postulated to explain the electron-spin polarization in photoemission and field-emission experiments.

W. Nolting and B. Reihl

1983-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Optical cavity furnace for semiconductor wafer processing  

DOE Patents (OSTI)

An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

Sopori, Bhushan L.

2014-08-05T23:59:59.000Z

422

Semiconductor Manufacturing International Corp SMIC | Open Energy  

Open Energy Info (EERE)

Manufacturing International Corp SMIC Manufacturing International Corp SMIC Jump to: navigation, search Name Semiconductor Manufacturing International Corp (SMIC) Place Shanghai, Shanghai Municipality, China Zip 201203 Sector Solar Product Semiconductor group launching solar cell production from its recycled silicon wafers. Coordinates 31.247709°, 121.472618° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.247709,"lon":121.472618,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

423

A Markovian analysis of semiconductor manufacturing processes  

E-Print Network (OSTI)

) Karan L. Watson (Member) Martin A. Wortman (Member) ep Sastri (Member) o W. Howze (Head of Department) December 1991 ABSTRACT A Markovian Analysis of Semiconductor Manufacturing Processes. (December 1991) Kent Eugene Schultz, B. S. , Iowa... grateful to Dr. Martin Wortman, for his pa- tience and endless stream of examples to help me understand stochastic processes. I would also like to thank Dr. Tep Sastri for his patience and for always having a refer- ence available when I needed it...

Schultz, Kent Eugene

2012-06-07T23:59:59.000Z

424

Electrical Usage Characterization of Semiconductor Processing Tools  

E-Print Network (OSTI)

ELECTRICAL USAGE CHARACTERIZATION OF SEMICONDUCTOR PROCESSING TOOLS Scott R. Hinson Associate Engineer Radian Electronic Systems 15705 Long Vista Drive Austin, TX 78751 Abstract This paper presents the basic concepts in performing... be completed using as much detail as possible. The most often cited reason for aUditing process tools is the large discrepancy between the facilities requirements listed on the tool nameplate and the actual measured usage. I have measured systems...

Hinson, S. R.

425

Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors  

Science Journals Connector (OSTI)

Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism.

K.-J. Chao, Zhenyu Zhang, Ph. Ebert, and C. K. Shih

1999-08-15T23:59:59.000Z

426

Cybersecurity Awareness Materials  

Energy.gov (U.S. Department of Energy (DOE))

The OCIO develops and distributes a variety of awareness material to be used during cyber awareness campaigns or as needed to address an emerging cyber threat or hot topic. These materials are available to other DOE organizations or public and private institutions to enhance or supplement site-specific awareness programs.

427

Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt  

SciTech Connect

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: 1. wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; 2. n-type semiconductors; 3.they exhibit well defined magnetic hysteresis loops and 4. their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A&M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of research by including investigations of Mn-FeTiO3, Mn-Fe2TiO5 and by producing a novel three terminal device capable of generating bipolar currents besides producing radiation resistant varistors and a magnetically switchable device. Furthermore we conclusively established the radiation hardness of the four modified iron titanates we studied. In all our publications, conference and seminar presentations, dissertations and theses sponsorship of DOE has been acknowledged

Dr. R. K. Pandey, Cudworth Endowed Professor (Professor Emeritus of The Unviersity of Alabama)

2008-11-24T23:59:59.000Z

428

Semiconductor electrochemistry of coal pyrite  

SciTech Connect

The kinetics of the formation of Fe(HS)[sup 2]-n[sub n,] the intermediate in the formation of FeS (from the reaction between aqueous sulfide ions and dissolved FE(II) salts) was studied with a stopped-flow spectrophotometric technique. As described in the previous report, the absorbance-time curve indicated that a black substance formed within the first few seconds of the reaction; this material subsequently decomposed gradually to give a lighter dark product within the following several minutes. It was proposed that an intermediate species, Fe(HS)[sup 2]-n[sub n], was formed initially from the reaction between Fe[sup 2+] and HS ions in aqueous solution and this intermediate was converted to FeS finally. The kinetic experiments showed that the rate of formation of Fe(HS)[sup 2]-n[sub n] was first order with respect to both Fe[sup 2+] and HS, with a rate constant of 103.81 (mol/l)[sup [minus]1]sec[sup [minus]1]. These results suggest that the black intermediate is FeHS[sup +].

Osseo-Asare, K.; Wei, D.

1992-01-01T23:59:59.000Z

429

Imaging of self-assembly and self-assembled materials P. V. Braun  

E-Print Network (OSTI)

Imaging of self-assembly and self-assembled materials P. V. Braun Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 Self-assembled materials have applications. Self-assembly has been proposed as a route to photonic band gap materials, semiconductor devices

Braun, Paul

430

LBL-37525 UC-404 Surface Recombination in Semiconductors J.M. Langer* and W. Walukiewicz**  

Office of Scientific and Technical Information (OSTI)

37525 37525 UC-404 Surface Recombination in Semiconductors J.M. Langer* and W. Walukiewicz** "Institute of Physics Polish Academy of Sciences Al. Lotnikow 32/46 02668 Warsaw, Poland **Center for Advanced Materials Materials Sciences Division Lawrence Berkeley National Laboratory University of California Berkeley, California 94720 July 1995 DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, make any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that

431

Optical properties of metallic (III, Mn)V ferromagnetic semiconductors in the infrared to visible range  

E-Print Network (OSTI)

, Texas 77843-4242, USA 2Institute of Physics, ASCR, Cukrovarnick? 10, 162 53 Praha 6, Czech Republic 3Department of Physics, University of Texas, Austin, Texas 78712-0264, USA 4Institute of Physics, Polish Academy of Sciences, al. Lotnik?w 32/46, PL-02... of ferromagnetic semiconductors based on (III, Mn)V materials.1?4 These materials have been the focus of intensive research over the recent years after nonequilibrium growth procedures5,6 have demonstrated the ability to achieve a ferromagnetic phase...

Hankiewicz, EM; Jungwirth, T.; Dietl, T.; Timm, C.; Sinova, Jairo.

2004-01-01T23:59:59.000Z

432

Nanoscale Engineering for the Design of Efficient Inorganic-Organic Hybrid Thermoelectrics  

E-Print Network (OSTI)

Research aimed at enhancing the thermoelectric performance of semiconductors comprised of only earth-abundant elements has recently come under renewed focus as these materials systems offer a cost-effective path for scavenging waste heat. In light...

Brockway, Lance Robert

2014-04-14T23:59:59.000Z

433

Novel Fabrication and Simple Hybridization of Exotic Material MEMS  

SciTech Connect

Work in materials other than silicon for MEMS applications has typically been restricted to metals and metal oxides instead of more ''exotic'' semiconductors. However, group III-V and II-VI semiconductors form a very important and versatile collection of material and electronic parameters available to the MEMS and MOEMS designer. With these materials, not only are the traditional mechanical material variables (thermal conductivity, thermal expansion, Young's modulus, etc.) available, but also chemical constituents can be varied in ternary and quaternary materials. This flexibility can be extremely important for both friction and chemical compatibility issues for MEMS. In addition, the ability to continually vary the bandgap energy can be particularly useful for many electronics and infrared detection applications. However, there are two major obstacles associated with alternate semiconductor material MEMS. The first issue is the actual fabrication of non-silicon devices and the second impediment is communicating with these novel devices. We will describe an essentially material independent fabrication method that is amenable to most group III-V and II-VI semiconductors. This technique uses a combination of non-traditional direct write precision fabrication processes such as diamond turning, ion milling, laser ablation, etc. This type of deterministic fabrication approach lends itself to an almost trivial assembly process. We will also describe in detail the mechanical, electrical, and optical self-aligning hybridization technique used for these alternate-material MEMS.

Datskos, P.G.; Rajic, S.

1999-11-13T23:59:59.000Z

434

Materialism and materiality  

Science Journals Connector (OSTI)

Accountants and auditors in recent financial scandals have been pictured as materialistic, simply calculating consequences and ignoring duties. This paper potentially explains this apparently materialistic behaviour in what has historically been a truthtelling profession. Materiality, which drives audit priorities, has been institutionalised in accounting and auditing standards. But a materiality focus inherently implies that all amounts that are not 'materially' misstated are equally true. This leads to habitual immaterial misstatements and promotes the view that auditors do not care about truth at all. Auditors' lack of commitment to truth undermines their claim to be professionals in the classic sense.

Michael K. Shaub

2005-01-01T23:59:59.000Z

435

MC-CAM Research Topics Organic LEDs  

E-Print Network (OSTI)

MC-CAM Research Topics Organic LEDs Phosphors and materials for solid state lighting Battery materials with highly- controlled microstructures Next generation optical storage media Products based for advanced display technologies Mitsubishi Chemical Center for Advanced Materials MRL Building University

Bigelow, Stephen

436

Wide Bandgap Semiconductors: Essential to Our Technology Future |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future January 15, 2014 - 8:00am Addthis Learn how wide bandgap semiconductors could impact clean energy technology and our daily lives. | Video by Sarah Gerrity and Matty Greene, Energy Department. Dr. Ernest Moniz Dr. Ernest Moniz Secretary of Energy What are the key facts? North Carolina State University will lead the Energy Department's new manufacturing innovation institute for the next generation of power electronics, focusing on wide bandgap (WBG) semiconductors. Building America's leadership in WBG semiconductor manufacturing while driving down the cost of the technology could lead to more affordable products for businesses and consumers, billions of dollars in energy

437

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Semiconductor Industry Association (SIA) The Semiconductor Industry Association (SIA) is the premier trade association representing the U.S. semiconductor industry. Founded in 1977 by five microelectronics innovators, the SIA has grown to include over 100 companies that account for more than 83% of U.S.-based semiconductor production. The SIA provides a forum for domestic semiconductor companies to work collectively to advance the competitiveness of the $70 billion U.S. chip industry. Through its national and international network of chief executive officers and working committees, the SIA shapes public policy on issues important to the industry and provides a spectrum of services to help its members grow their businesses. World Semiconductor Council (WSC)

438

Photoluminescence and Extended X-ray Absorption Fine Structure Studies on CdTe Material.  

E-Print Network (OSTI)

??The direct-band-gap semiconductor CdTe is an important material for fabricating high efficiency, polycrystalline thin-film solar cells in a heterojunction configuration. The outstanding physical properties of… (more)

Liu, Xiangxin

2006-01-01T23:59:59.000Z

439

Automated material handling systems: an approach to robust layout planning of AMHS  

Science Journals Connector (OSTI)

The simulation-based layout planning of automated material handling systems (AMHS) for microelectronics and semiconductor manufacturing demands adequate simulation models. An approach for measuring and quantifying the AMHS layout performance of alternative ...

Roland Sturm; Joachim Seidelmann; Johann Dorner; Kevin Reddig

2003-12-01T23:59:59.000Z

440

Method and system for powering and cooling semiconductor lasers  

DOE Patents (OSTI)

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Telford, Steven J; Ladran, Anthony S

2014-02-25T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Technical Information Technical Information Download Acrobat Reader Modeling China's Semiconductor Industry Fluorinated Compound Emissions and Drafting a Roadmap for Climate Protection. (PDF 101 KB) 14th Annual International Semiconductor Environment Safety & Health (ISESH) Conference in Jeju, Korea (June 2007) presentation by Scott Bartos, U.S. EPA. Estimating the Impact of Migration to Asian Foundry Production on Attaining the WSC 2010 PFC Reduction Goal. (PDF 458 KB) 11th Annual ISESH Conference in Makuhari, Japan (July 2004) presentation by Scott Bartos, U.S. EPA. Guidelines for Environmental Characterization of Semiconductor Equipment (PDF 361 KB) This document provides guidelines for suppliers of semiconductor processing and abatement equipment to characterize their equipment to meet

442

July 28, 2010, Guiding semiconductor research through collaborative engagement  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

The SRC ... The SRC ... Guiding semiconductor research through collaborative engagement Elizabeth J. Weitzman Exec. VP, SRC Exec. Director, Focus Center Research Program Semiconductor Research Corporation 2 ... Awarded Nat'l Medal of Technology Presidential Citation: "For building the world's largest and most successful university research force to support the ... semiconductor industry; For proving the concept of collaborative research as the first high-tech research consortium; and For creating the concept and methodology that evolved into the International Technology Roadmap for Semiconductors." 3 Key Attributes of SRC Research Entities 1. Accepted IP model. SRC's model has been

443

Semiconductor nanowires for photovoltaic and photoelectrochemical energy conversion  

Science Journals Connector (OSTI)

Semiconductor nanowires (NW) possess several beneficial properties for efficient conversion of solar energy into electricity and chemical energy. Due to their efficient absorption of light, short distances for...

Neil P. Dasgupta; Peidong Yang

2014-06-01T23:59:59.000Z

444

Method of transferring a thin crystalline semiconductor layer  

DOE Patents (OSTI)

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Nastasi, Michael A. (Sante Fe, NM); Shao, Lin (Los Alamos, NM); Theodore, N. David (Mesa, AZ)

2006-12-26T23:59:59.000Z

445

Multiplex Chaos Synchronization in Semiconductor Lasers with Multiple Optoelectronic Feedbacks  

E-Print Network (OSTI)

Secure chaos based multiplex communication system scheme is proposed utilizing globally coupled semiconductor lasers with multiple variable time delay optoelectronic feedbacks.

E. M. Shahverdiev; K. A. Shore

2011-11-06T23:59:59.000Z

446

Peltier cooling stage utilizing a superconductor-semiconductor junction  

SciTech Connect

This paper describes a Peltier cooling stack. It comprises: a first electrode; a superconducting layer electrically coupled to the first electrode; a semiconducting layer electrically coupled to the superconducting layer; and a second superconducting layer electrically coupled to the semiconductor layer; and a second electrode electrically coupled to the second superconducting layer, electrons flowing under an applied voltage from the first electrode through the first superconducting layer, semiconductor layer, second superconducting layer and second electrode, the electrical junction between the first superconducting layer and semiconductor providing Peltier cooling while the electrical junction between the semiconductor layer and the second superconducting layer providing Peltier heating, whereby a cryogenic Peltier cooling stack is provided.

Skertic, M.M.

1991-04-09T23:59:59.000Z

447

Coherence length tunable semiconductor laser with optical feedback  

Science Journals Connector (OSTI)

We report the experimental results to continuously tune the coherence length of a semiconductor laser using an optical feedback scheme. The coherence length can be controlled by...

Wang, Yuncai; Kong, Lingqin; Wang, Anbang; Fan, Linlin

2009-01-01T23:59:59.000Z

448

Exchange Coupling in the Ferromagnetic Semiconductor GaMnAs.  

E-Print Network (OSTI)

?? The study of ferromagnetic semiconductors (FMS) continues to be of great interest because of their potential for spintronic devices. While there has been much… (more)

Leiner, Jonathan Carl

2012-01-01T23:59:59.000Z

449

Exchange interaction studies in magnetic semiconductors by neutron scattering.  

E-Print Network (OSTI)

??Theories predict that making a dilute magnetic semiconductor strongly p -type would allow it to remain ferromagnetic at room temperature. This is of intrest as… (more)

Wiren, Zachary Quincy

2008-01-01T23:59:59.000Z

450

Science Organizations  

NLE Websites -- All DOE Office Websites (Extended Search)

Organizations Science Organizations National security depends on science and technology. The United States relies on Los Alamos National Laboratory for the best of both. No place...

451

Development and evaluation of on-line detection techniques for polar organics in ultrapure water  

SciTech Connect

An on-line monitor that can perform rapid, trace detection of polar organics such as acetone and isopropanol in ultrapure water (UPW) is necessary to efficiently recycle water in semiconductor manufacturing facilities. The detection of these analytes is problematic due to their high solubility in water, resulting in low partitioning into sensor coatings for direct water analysis or into the vapor phase for detection by vapor phase analyzers. After considering various options, we have evaluated two conventional laboratory techniques: gas chromatography and ion mobility spectroscopy. In addition, optimizations of sensor coating materials and sample preconditioning systems were performed with the goal of a low cost, chemical sensor system for this application. Results from these evaluations, including recommendations for meeting the needs of this application, are reported.

Frye, G.C.; Blair, D.S.; Schneider, T.W.; Mowry, C.D.; Colburn, C.W.; Donovan, R.P.

1996-03-01T23:59:59.000Z

452

Mismatched semiconductor nanowires: growth and characterization  

E-Print Network (OSTI)

of a prototypical phase change material, GeTe, by in-situprototypical phase change material, ger- manium telluride (an introduction to phase change materials as related to data

Yim, Joanne Wing Lan

2011-01-01T23:59:59.000Z

453

Photovoltaic Cell Material Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Material Basics Material Basics Photovoltaic Cell Material Basics August 19, 2013 - 4:43pm Addthis Although crystalline silicon cells are the most common type, photovoltaic (PV), or solar cells, can be made of many semiconductor materials. Each material has unique strengths and characteristics that influence its suitability for specific applications. For example, PV cell materials may differ based on their crystallinity, bandgap, absorbtion, and manufacturing complexity. Learn more about each of these characteristics below or learn about these solar cell materials: Silicon (Si)-including single-crystalline Si, multicrystalline Si, and amorphous Si Polycrystalline Thin Films-including copper indium diselenide (CIS), cadmium telluride (CdTe), and thin-film silicon Single-Crystalline Thin Films-including high-efficiency material

454

High power semiconductor laser diode arrays  

Science Journals Connector (OSTI)

The cw optical power obtainable from semiconductor laser diodes has been extended to unprecedented levels in recent years through the use of multistripe arrays. By spreading out the optical power with more than 100 stripes single?facet cw output in exces of 5 Watts has been demonstrated and 500 mW cw is now commercially available. Recent improvements to array performance include: arrays up to 1 cm wide that generates quasi?cw (150 usec pulse) output in excesss of 11 Watts and a novel device structure which produces up to 215 mW cw in a single diffraction limited lobe.

Peter S. Cross

1986-01-01T23:59:59.000Z

455

High power semiconductor laser diode arrays  

SciTech Connect

The cw optical power obtainable from semiconductor laser diodes has been extended to unprecedented levels in recent years through the use of multistripe arrays. By spreading out the optical power with more than 100 stripes, single-facet, cw output in exces of 5 Watts has been demonstrated, and 500 mW cw is now commercially available. Recent improvements to array performance include: arrays up to 1 cm wide that generates quasi-cw (150 usec pulse) output in excesss of 11 Watts, and a novel device structure which produces up to 215 mW cw in a single diffraction limited lobe.

Cross, P.S.

1986-08-15T23:59:59.000Z

456

Reusing rinse wastewater at a semiconductor plant  

SciTech Connect

Two pilot rinse wastewater reuse projects were developed as part of a long-term water conservation program for a Motorola semiconductor manufacturing site in Phoenix, Ariz. The conceptual designs for the projects grew out of a detailed wastewater reuse study that characterized wastewater streams at their generation points. Both treatment techniques were specifically researched, bench-tested, and adapted to further water conservation efforts while ensuring 100 percent compliance with appropriate effluent regulations and industrial discharge permit conditions. Together, the pilot projects save the city of Phoenix approximately 45 mil gal (17 {times} 10{sup 4} m{sup 3}) of water annually.

Shah, A.R. [Motorola SCG, McDowell, MD (United States). Environmental, Safety, and Industrial Hygiene Dept.; Ploeser, J.H. [Phoenix Water Services Dept., AZ (United States). Water Conservation Office

1999-08-01T23:59:59.000Z

457

Transient Rayleigh scattering from single semiconductor nanowires  

SciTech Connect

Transient Rayleigh scattering spectroscopy is a new pump-probe technique to study the dynamics and cooling of photo-excited carriers in single semiconductor nanowires. By studying the evolution of the transient Rayleigh spectrum in time after excitation, one can measure the time evolution of the density and temperature of photo-excited electron-hole plasma (EHP) as they equilibrate with lattice. This provides detailed information of dynamics and cooling of carriers including linear and bimolecular recombination properties, carrier transport characteristics, and the energy-loss rate of hot electron-hole plasma through the emission of LO and acoustic phonons.

Montazeri, Mohammad; Jackson, Howard E.; Smith, Leigh M. [Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011 (United States); Yarrison-Rice, Jan M. [Department of Physics, Miami University, Oxford, OH 45056 (United States); Kang, Jung-Hyun; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

2013-12-04T23:59:59.000Z

458

Silicon metal-semiconductor-metal photodetector  

DOE Patents (OSTI)

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

459

Silicon metal-semiconductor-metal photodetector  

DOE Patents (OSTI)

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1995-01-01T23:59:59.000Z

460

Organization | Department of Energy  

Energy Savers (EERE)

About Us Organization Organization Organization Printable PDF News & Blog CIO Leadership Organization Contact Us...

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Organization | Department of Energy  

Office of Environmental Management (EM)

About Us Organization Organization Organization News Leadership Organization History Careers Contact Us...

462

Design Enablement and Design-Centric Assessment of Future Semiconductor Technologies  

E-Print Network (OSTI)

ITRa] International Technology Roadmap for Semiconductors,ITRb] International Technology Roadmap for Semiconductors,val- ues from ITRS technology roadmap [ITRb] and typical

Abou Ghaida, Rani

2012-01-01T23:59:59.000Z

463

Materials from Renewable Resources Most synthetic organic materials and polymers  

E-Print Network (OSTI)

.sukumaran@che Conceptualize ecofriendly chemicals, solvents, surfactants, and liquid solutions for chemical and industrial processeschemical and industrial processes Play a pivotal role in benign ways of producing chemicals and solvents research partners Create a sustainable economy using green chemistry Impressum Herausgeber: Universität

Schubart, Christoph

464

Electrodeposition of Antimony Selenide Thin Films and Application in Semiconductor Sensitized Solar Cells  

Science Journals Connector (OSTI)

The current–voltage characteristic of the cells were measured using a xenon arc lamp simulator (Sun 2000, ABET Technologies) with an AM 1.5 G spectral filter, and the intensity was adjusted to provide 1 sun (100 mW/cm2) using a calibrated silicon solar cell. ... In selenosulfate electrolyte, the cathodic current detected for V production of Se2– by means of SeSO32– + 2 e– = Se2– + SO2–. ... Indeed, the Jsc is similar to values reported for the state of the art of the inorganic semiconductor sensitized solar cells based on liquid(36) and organic(7) hole conductors. ...

T. Tuyen Ngo; Sudam Chavhan; Ivet Kosta; Oscar Miguel; Hans-Jurgen Grande; Ramón Tena-Zaera

2014-01-17T23:59:59.000Z

465

On a mathematical model for hot carrier injection in semiconductors  

E-Print Network (OSTI)

On a mathematical model for hot carrier injection in semiconductors Naoufel Ben Abdallah (1) Pierre of a semiconductor device heavily depends on the injection mechanism of carriers into the active regions through by the relation V bi = U th log N + N \\Gamma ; where U th = kBT=q is the thermal voltage and N + ; N \\Gamma

Schmeiser, Christian

466

Magnetically and electrically tunable semiconductor quantum waveguide inverter  

E-Print Network (OSTI)

Magnetically and electrically tunable semiconductor quantum waveguide inverter M. J. Gilbert,a) R implementations. We present an electrically tunable semiconductor quantum waveguide implementation of an inverter. On the other hand, if a ``0'' is present in the control bit, then the qubit is inverted. In a recent study

Gilbert, Matthew

467

Semiconductors 4-bit I2C LED dimmer  

E-Print Network (OSTI)

Philips Semiconductors PCA9533 4-bit I2C LED dimmer Product data sheet Supersedes data of 2003 Sep 19 2004 Oct 01 INTEGRATED CIRCUITS #12;Philips Semiconductors Product data sheet PCA95334-bit I2C LED dimmer 22004 Oct 01 FEATURES · 4 LED drivers (on, off, flashing at a programmable rate) · 2 selectable

Berns, Hans-Gerd

468

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic  

E-Print Network (OSTI)

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic feedback S. The Chaos in the single-mode semiconductor lasers is generated by means of an optoelectronic feedback with optoelectronic feedback has been demonstrated for quite slow data rates by using chaotic wavelength fluctuations

Illing, Lucas

469

Multistability in a semiconductor laser with optoelectronic feedback  

E-Print Network (OSTI)

Multistability in a semiconductor laser with optoelectronic feedback Guang-Qiong Xia1,2 , Sze with delayed optoelectronic feedback is observed experimentally. For a given delay time, the observed dynamical-oscillating semiconductor lasers subject to delayed optoelectronic mutual coupling," Phys. Rev. E 73, 047201-1-4 (2006) 8. G

Chan, Sze-Chun

470

Photonic switching devices based on semiconductor nanostructures  

E-Print Network (OSTI)

Focusing and guiding light into semiconductor nanostructures can deliver revolutionary concepts for photonic devices, which offer a practical pathway towards next-generation power-efficient optical networks. In this review, we consider the prospects for photonic switches using semiconductor quantum dots (QDs) and photonic cavities which possess unique properties based on their low dimensionality. The optical nonlinearity of such photonic switches is theoretically analyzed by introducing the concept of a field enhancement factor. This approach reveals drastic improvement in both power-density and speed, which is able to overcome the limitations that have beset conventional photonic switches for decades. In addition, the overall power consumption is reduced due to the atom-like nature of QDs as well as the nano-scale footprint of photonic cavities. Based on this theoretical perspective, the current state-of-the-art of QD/cavity switches is reviewed in terms of various optical nonlinearity phenomena which have been utilized to demonstrate photonic switching. Emerging techniques, enabled by cavity nonlinear effects such as wavelength tuning, Purcell-factor tuning and plasmonic effects are also discussed.

Chao-Yuan Jin; Osamu Wada

2014-02-26T23:59:59.000Z

471

Distributed Quantum Computation Architecture Using Semiconductor Nanophotonics  

E-Print Network (OSTI)

In a large-scale quantum computer, the cost of communications will dominate the performance and resource requirements, place many severe demands on the technology, and constrain the architecture. Unfortunately, fault-tolerant computers based entirely on photons with probabilistic gates, though equipped with "built-in" communication, have very large resource overheads; likewise, computers with reliable probabilistic gates between photons or quantum memories may lack sufficient communication resources in the presence of realistic optical losses. Here, we consider a compromise architecture, in which semiconductor spin qubits are coupled by bright laser pulses through nanophotonic waveguides and cavities using a combination of frequent probabilistic and sparse determinstic entanglement mechanisms. The large photonic resource requirements incurred by the use of probabilistic gates for quantum communication are mitigated in part by the potential high-speed operation of the semiconductor nanophotonic hardware. The system employs topological cluster-state quantum error correction for achieving fault-tolerance. Our results suggest that such an architecture/technology combination has the potential to scale to a system capable of attacking classically intractable computational problems.

Rodney Van Meter; Thaddeus D. Ladd; Austin G. Fowler; Yoshihisa Yamamoto

2009-09-17T23:59:59.000Z

472

Porous Materials -Metal-Organic Frameworks  

E-Print Network (OSTI)

expected to grow to 68% in 2025 · Hydrogen as energy carrier clean, efficient, and can be derived from domestic resources Renewable (biomass, hydro, wind, solar, and geothermal) Fossil fuels (coal ,natural gas is a critical enabling technology for the acceptance of hydrogen powered vehicles · Storing sufficient hydrogen

Tsymbal, Evgeny Y.

473

More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging  

SciTech Connect

Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

None

2010-02-01T23:59:59.000Z

474

Methanofullerene-coated tetrabenzoporphyrin organic field-effect transistors  

E-Print Network (OSTI)

-grade ethanol for 20 min and dried with nitrogen gas. A 0.7% weight precursor solu- tion was prepared-processable form of the organic semiconductor tetrabenzoporphyrin were fabricated with a top coating of a soluble n or postdeposition processing, namely the effects of absorbing oxygen,4 or water,5 or exposure to light.6 In the case

Kanicki, Jerzy

475

Combinatorial synthesis of novel materials  

DOE Patents (OSTI)

Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, non-biological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.

Schultz, Peter G. (Oakland, CA); Xiang, Xiaodong (Alameda, CA); Goldwasser, Isy (Menlo Park, CA)

2001-01-01T23:59:59.000Z

476

Combinatorial synthesis of novel materials  

DOE Patents (OSTI)

Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, non-biological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.

Schultz, Peter G. (Oakland, CA); Xiang, Xiaodong (Alameda, CA); Goldwasser, Isy (Alameda, CA)

2002-02-12T23:59:59.000Z

477

Combinatorial synthesis of novel materials  

DOE Patents (OSTI)

Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, non-biological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.

Schultz, Peter G. (Oakland, CA); Xiang, Xiaodong (Alameda, CA); Goldwasser, Isy (Menlo Park, CA)

1999-12-21T23:59:59.000Z

478

Combinatorial sythesis of organometallic materials  

DOE Patents (OSTI)

Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, non-biological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.

Schultz, Peter G. (Oakland, CA); Xiang, Xiaodong (Alameda, CA); Goldwasser, Isy (Alameda, CA)

2002-07-16T23:59:59.000Z

479

Photo-induced charge transfer across the interface between organic molecular crystals and polymers  

E-Print Network (OSTI)

Photo-induced charge transfer of positive and negative charges across the interface between an ordered organic semiconductor and a polymeric insulator is observed in the field-effect experiments. Immobilization of the transferred charge in the polymer results in a shift of the field-effect threshold of polaronic conduction along the interface in the semiconductor, which allows for direct measurements of the charge transfer rate. The transfer occurs when the photon energy exceeds the absorption edge of the semiconductor. The direction of the transverse electric field at the interface determines the sign of the transferred charge; the transfer rate is controlled by the field magnitude and light intensity.

V. Podzorov; M. E. Gershenson

2004-11-23T23:59:59.000Z

480

Materials Licenses Available | Tech Transfer | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Materials SHARE Materials 199600248 Thermally Conductive Graphite Foam (Related ID # 199600248, 199800445, 199900728, 199900722, 199900727, 200000788, 200000861, 200201063, 200000892) 199600248 Carbon or Graphite Foam Heating Element for Regulating Engine Fluids 199800555 Imprinting Method for Selective Mesoporous Sorbents 200000798 Method of Improving Surface Properties of Aluminum Alloys by Weld Overlay Cladding 200000831 Improved Gas Storage Carbon with Enhanced Thermal Conductivity 200000835 Humidifier for Fuel Cell Using High Conductivity Carbon Foam 200000842 Field Emission Devices with Carbon Nanofiber Emitters 200000850 A Structure, Method and Process for Controlling Band Offset and Alignment at a Crystalline Oxide on Semiconductor Interface

Note: This page contains sample records for the topic "materials semiconductor organic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

New Morphological Paradigm Uncovered in Organic Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

New Morphological Paradigm Uncovered in Organic Solar Cells Print Organic solar cells are made of light, flexible, renewable materials; they require simple and inexpensive...

482

New Morphological Paradigm Uncovered in Organic Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Paradigm Uncovered in Organic Solar Cells Print Wednesday, 27 April 2011 00:00 Organic solar cells are made of light, flexible, renewable materials; they require simple and...

483

Semiconductor bridge: A plasma generator for the ignition of explosives  

SciTech Connect

Small metal bridgewires are commonly used to ignite energetic powders such as pyrotechnics, propellants, and primary or secondary explosives. In this paper we describe a new means for igniting explosive materials using a semiconductor bridge (SCB). When driven with a short (20 ..mu..s), low-energy pulse (less than 3.5 mJ), the SCB produces a hot plasma that ignites explosives. The SCB, a heavily n-doped silicon film, typically 100 ..mu..m long by 380 ..mu..m wide by 2 ..mu..m thick, is 30 times smaller in volume than a conventional bridgewire. SCB devices produce a usable explosive output in a few tens of microseconds and operate at one-tenth the input energy of metal bridgewires. In spite of the low energies for ignition, SCB devices are explosively safe. We describe SCB processing and experiments evaluating SCB operation. Also discussed are the SCB vaporization process, plasma formation, optical spectra from the discharge, heat transfer mechanisms from the SCB to the explosive powders, and SCB device applications.

Benson, D.A.; Larsen, M.E.; Renlund, A.M.; Trott, W.M.; Bickes R.W. Jr.

1987-09-01T23:59:59.000Z

484

Semiconductor bridge: A plasma generator for the ignition of explosives  

Science Journals Connector (OSTI)

Small metal bridgewires are commonly used to ignite energetic powders such as pyrotechnics propellants and primary or secondary explosives. In this paper we describe a new means for igniting explosive materials using a semiconductor bridge (SCB). When driven with a short (20 ?s) low?energy pulse (less than 3.5 mJ) the SCB produces a hot plasma that ignites explosives. The SCB a heavily n?doped silicon film typically 100 ?m long by 380 ?m wide by 2 ?m thick is 30 times smaller in volume than a conventional bridgewire. SCB devices produce a usable explosive output in a few tens of microseconds and operate at one?tenth the input energy of metal bridgewires. In spite of the low energies for ignition SCB devices are explosively safe. We describe SCB processing and experiments evaluating SCB operation. Also discussed are the SCB vaporization process plasma formation optical spectra from the discharge heat transfer mechanisms from the SCB to the explosive powders and SCB device applications.

D. A. Benson; M. E. Larsen; A. M. Renlund; W. M. Trott; R. W. Bickes Jr.

1987-01-01T23:59:59.000Z

485

Clathrates as effective p-type and n-type tetrahedral carbon semiconductors  

Science Journals Connector (OSTI)

Based on ab initio calculations, we predict that a carbon clathrate compound (hexagonal C40) is suitable to be n doped by Li insertion and p doped by substitutional boron. This material represents an example of n- and p-type tetrahedral carbon semiconductor, alternative to the n-doped diamondlike films whose realization is still in progress. Although this compound has not been synthesized so far, its study can also provide insights into the properties of nanostructured carbon thin films, grown by supersonic cluster beam deposition techniques that display local morphologies similar to the channels and fullereniclike cages present in the system here investigated.

M. Bernasconi; S. Gaito; G. Benedek

2000-05-15T23:59:59.000Z

486

Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication  

SciTech Connect

Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palto Alto, CA)

2002-01-01T23:59:59.000Z

487

Experimental test for geminate recombination applied to organic solar cells  

Science Journals Connector (OSTI)

We show that a clear experimental test can distinguish between geminate and nongeminate recombination in low mobility semiconductors. For the particular case of the organic solar cell, the relative contribution of geminate recombination can be determined by measuring transient photoconductivity versus applied voltage. Measurements carried out at room temperature and 200 K on bulk heterojunction organic solar cells fabricated with two different semiconducting polymers show that neither exhibits significant geminate recombination.

R. A. Street; Sarah Cowan; A. J. Heeger

2010-09-01T23:59:59.000Z

488

Unique Configuration of a Nitrogen-Doped Graphene Nanoribbon: Potential Applications to Semiconductor and Hydrogen Fuel Cell  

Science Journals Connector (OSTI)

Unique Configuration of a Nitrogen-Doped Graphene Nanoribbon: Potential Applications to Semiconductor and Hydrogen Fuel Cell ... Further examination on oxygen adsorption at NTSG reveals high electrocatalytic activity of NTSG in oxygen reduction reaction, indicating that this nitrogen-doped graphene material could be used as a potential catalyst for hydrogen fuel cells. ... (48) One recent theoretical work has also disclosed that the nitrogen-doped fullerene could be used as a potential catalyst for hydrogen fuel cells. ...

Hong Zheng; Jia-jia Zheng; Ling He; Xiang Zhao

2014-09-22T23:59:59.000Z

489

Organic solvent topical report  

SciTech Connect

This report is the technical basis for the accident and consequence analyses used in the Hanford Tank Farms Basis for Interim Operation. The report also contains the scientific and engineering information and reference material needed to understand the organic solvent safety issue. This report includes comments received from the Chemical Reactions Subcommittee of the Tank Advisory Panel.

Cowley, W.L.

1998-04-30T23:59:59.000Z

490

Proc. Fifteenth IEEE Semiconductor Thermal Measurement and Management Symposium, March 9-11, 1999, San Diego CA, IEEE # 99CH36306.  

E-Print Network (OSTI)

Proc. Fifteenth IEEE Semiconductor Thermal Measurement and Management Symposium, March 9-11, 1999, San Diego CA, IEEE # 99CH36306. 74 THERMAL MANAGEMENT USING "DRY" PHASE CHANGE MATERIALS R.A. Wirtz" PCM unit conductance D Heat sink depth htr Heat of transition H Fin height Hpcm PCM mass depth kal

Wirtz, Richard A.

491

Control of coherence resonance in semiconductor superlattices  

E-Print Network (OSTI)

We study the effect of time-delayed feedback control and Gaussian white noise on the spatio-temporal charge dynamics in a semiconductor superlattice. The system is prepared in a regime where the deterministic dynamics is close to a global bifurcation, namely a saddle-node bifurcation on a limit cycle ({\\it SNIPER}). In the absence of control, noise can induce electron charge front motion through the entire device, and coherence resonance is observed. We show that with appropriate selection of the time-delayed feedback parameters the effect of coherence resonance can either be enhanced or destroyed, and the coherence of stochastic domain motion at low noise intensity is dramatically increased. Additionally, the purely delay-induced dynamics in the system is investigated, and a homoclinic bifurcation of a limit cycle is found.

Johanne Hizanidis; Eckehard Schoell

2008-09-01T23:59:59.000Z

492

Hybrid Semiconductors for Hardier Electronics and Optoelectronics? |  

NLE Websites -- All DOE Office Websites (Extended Search)

Unveiling the Molecular Structure of the Target of Many Drugs Unveiling the Molecular Structure of the Target of Many Drugs A New Scenario for First Life on Earth Surface Orbital 'Roughness' in Colossal Magnetoresistive Oxide Different Roads Toward Quantum Criticality Orbital Reconstruction at a Complex Oxide Interface Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Hybrid Semiconductors for Hardier Electronics and Optoelectronics? DECEMBER 21, 2007 Bookmark and Share The crystal structure of β-ZnTe(en)0:5, determined by single-crystal x-ray diffraction. Two-monolayerthick ZnTe slabs are interconnected by ethylenediamine (C2N2H8) molecules bonded to zinc atoms. Zn-Green, Te-Red, N-Blue,and C-Gray. Hydrogen atoms are omitted for clarity.

493

Synthesis and characterization of specific electrode materials for solar cells and supercapacitors  

Science Journals Connector (OSTI)

In this paper a brief overview of research in the field of electrode materials for solar cells and supercapacitors is presented which the authors dealt with for years. In addition to the standard electrode material (graphite and silicon in supercapacitor with solar cells) different materials were examined particularly oxides and sulfides of copper. Copper (I) oxide or cuprous oxide is an oxide semiconductor which is used as the anodic material in the form of thin film in lithium batteries and solar cells. The cathodic process of synthesis of cuprous oxide thin film is carried out in a potentiostatic mode from the organic electrolyte. The electrochemical characterization was carried out by cyclic voltammetry. The electro deposition techniques are particularly well suited for the deposition of single elements but it is also possible to carry out simultaneous depositions of several elements and syntheses of well-defined alternating layers of metals and oxides with thicknesses down to a few nanometers. Electrochemical characteristics of covellite (CuS) are of importance from flotation and metallurgical point of view due to its potential application in solid state solar cells and in photocatalytic reactions. Also the compound CuS appears as an intermediary product or a final product in electrochemical oxidation reactions of chalcocite (Cu 2S) which exhibits supercapacitor characteristics. Natural copper mineral covellite has been investigated in inorganic sulfate acid electrolytes as well as in strong alkaline electrolyte. Different electrochemical methods (galvanostatic potentiostatic cyclic voltammetry and electrochemical impedance spectroscopy) have been used in these investigations.

2013-01-01T23:59:59.000Z

494

Nonlinear Peltier effect in semiconductors Mona Zebarjadia  

E-Print Network (OSTI)

.1063/1.2785154 The Peltier coefficient plays an important role on how good a material is for thermoelectric solid thermoelectric transport in GaAs family of materials. The code is three dimensional both in k an an applied bias. Analytical results are in agreement with numerical simulations. Key material parameters

495

Reference Material  

NLE Websites -- All DOE Office Websites (Extended Search)

Reference Materials There are a variety of reference materials the NSSAB utilizes and have been made available on its website. Documents Fact Sheets - links to Department of Energy...

496

Materials Science  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Science science-innovationassetsimagesicon-science.jpg Materials Science National security depends on science and technology. The United States relies on Los Alamos...

497

High Throughput Combinatorial Screening of Biometic Metal-Organic...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Throughput Combinatorial Screening of Biometic Metal-Organic Materials for Military Hydrogen-Storage Materials (New Joint Miami UNREL DoDDLA Project) (presentation) High...

498

"Green" Replacement for Industrial Applications of Polar Organic...  

NLE Websites -- All DOE Office Websites (Extended Search)

Technologies Advanced Materials Advanced Materials Find More Like This Return to Search "Green" Replacement for Industrial Applications of Polar Organic Solvents University of...

499

Large-area semiconductor detectors of beta radiation  

SciTech Connect

This paper describes silicon semiconductor detectors with a diameter of 90 mm with hole-type conduction. The detectors had been grown with the Czochralski technique and had a specific resistivity lambda - 12 omega /SUP ./ cm and a carrier lifetime tau = 50 usec. In the case of semiconductor detectors for counting, silicon grown from a melt has its advantages because the distribution of the specific resistivity in low-resistivity semiconductor crystals is more homogeneous than in high-resistivity crystals in both longitudinal and transverse direactions relative to the axis of crystal growth.

Azimov, S.A.; Baizakov, B.B.; Karpov, V.S.; Muminov, R.A.

1986-08-01T23:59:59.000Z

500

Electric force microscopy of semiconductors: Theory of cantilever frequency fluctuations and noncontact friction  

SciTech Connect

An electric force microscope employs a charged atomic force microscope probe in vacuum to measure fluctuating electric forces above the sample surface generated by dynamics of molecules and charge carriers. We present a theoretical description of two observables in electric force microscopy of a semiconductor: the spectral density of cantilever frequency fluctuations (jitter), which are associated with low-frequency dynamics in the sample, and the coefficient of noncontact friction, induced by higher-frequency motions. The treatment is classical-mechanical, based on linear response theory and classical electrodynamics of diffusing charges in a dielectric continuum. Calculations of frequency jitter explain the absence of contributions from carrier dynamics to previous measurements of an organic field effect transistor. Calculations of noncontact friction predict decreasing friction with increasing carrier density through the suppression of carrier density fluctuations by intercarrier Coulomb interactions. The predicted carrier density dependence of the friction coefficient is consistent with measurements of the dopant density dependence of noncontact friction over Si. Our calculations predict that in contrast to the measurement of cantilever frequency jitter, a noncontact friction measurement over an organic semiconductor could show appreciable contributions from charge carriers.

Lekkala, Swapna; Marohn, John A.; Loring, Roger F., E-mail: roger.loring@cornell.edu [Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853 (United States)

2013-11-14T23:59:59.000Z