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Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents (OSTI)

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2002-01-01T23:59:59.000Z

2

Sandia National Labs: PCNSC: Departments: Semiconductor Material...  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering...

3

Metal Oxide Semiconductor Nanoparticles Open the Door to ...  

Using metal oxide semiconductor nanoparticles to target and control biological molecules could fuel medical breakthroughs in many areas, including ...

4

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents (OSTI)

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

5

Solar Superabsorption of Semiconductor Materials  

E-Print Network (OSTI)

We theoretically demonstrate the fundamental limit in volume for given materials (e.g. Si, a-Si, CdTe) to fully absorb the solar radiation above bandgap, which we refer as solar superabsorption limit. We also point out the general principles for experimentally designing light trapping structures to approach the superabsorption. This study builds upon an intuitive model, coupled leaky mode theory (CLMT), for the analysis of light absorption in nanostructures. The CLMT provides a useful variable transformation. Unlike the existing methods that rely on information of physical features (e.g. morphology, dimensionality) to analyze light absorption, the CLMT can evaluate light absorption in given materials with only two variables, the radiative loss and the resonant wavelength, of leaky modes, regardless the physical features of the materials. This transformation allows for surveying the entire variable space to find out the solar superabsorption and provides physical insights to guide the design of solar superabso...

Yu, Yiling; Cao, Linyou

2013-01-01T23:59:59.000Z

6

Metal Oxide Semiconductor Nanoparticles Pave the Way for ...  

Argonne researchers have developed a unique application of technology that involves using metal oxide semiconductor nanoparticles to target and control biological ...

7

Semiconductor Equipment and Materials International SEMI | Open Energy  

Open Energy Info (EERE)

Semiconductor Equipment and Materials International SEMI Semiconductor Equipment and Materials International SEMI Jump to: navigation, search Name Semiconductor Equipment and Materials International (SEMI) Place San Jose, California Zip 95134 2127 Product Global trade association, publisher and conference organiser representing the semiconductor and flat panel display equipment manufacturers. References Semiconductor Equipment and Materials International (SEMI)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor Equipment and Materials International (SEMI) is a company located in San Jose, California . References ↑ "Semiconductor Equipment and Materials International (SEMI)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_Equipment_and_Materials_International_SEMI&oldid=350739

8

Semiconductor and Materials Company Inc SAMCO | Open Energy Information  

Open Energy Info (EERE)

and Materials Company Inc SAMCO and Materials Company Inc SAMCO Jump to: navigation, search Name Semiconductor and Materials Company Inc (SAMCO) Place Kyoto, Kyoto, Japan Zip 612-8443 Sector Solar Product Japanese manufactruer of semiconductor and solar manufacturing equipment such as etching, deposition and cleaning systems. References Semiconductor and Materials Company Inc (SAMCO)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor and Materials Company Inc (SAMCO) is a company located in Kyoto, Kyoto, Japan . References ↑ "Semiconductor and Materials Company Inc (SAMCO)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_and_Materials_Company_Inc_SAMCO&oldid=350738

9

Method for depositing high-quality microcrystalline semiconductor materials  

SciTech Connect

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Guha, Subhendu (Bloomfield Hills, MI); Yang, Chi C. (Troy, MI); Yan, Baojie (Rochester Hills, MI)

2011-03-08T23:59:59.000Z

10

Synthesis and catalytic properties of metal and semiconductor nanoclusters  

SciTech Connect

Synthesis of metal or semiconductor nanoclusters in microheterogeneous oil-continuous inverse micelle systems is discussed. We focus on synthesis and catalytic properties of palladium, iron, and iron sulfide nanoclusters. Cluster size-control is achieved by changing the micelle size which is determined by small angle neutron scattering (SANS) and chosen to produce cluster in size range of 1-20 nm. Cluster sizes were determined by either transmission electron microscopy (TEM) or small-angle x-ray scattering (SAXS). Cluster structure was determined by either x-ray or electron diffraction. In the case of Fe nanoclusters the crystal structure depended on the chemical nature of the surfactant micelle used in the synthesis, illustrating the important role of the surfactant during the growth process. Results of in-situ pyrene hydrogenation using size-selected Pd clusters show a significant increase in activity/total surface area as the size decreases. These clusters also proved effective as unsupported catalysts for direct coal hydropyrolysis, even at very low metal concentrations. Synthesis and optical features of a new semiconductor cluster material, FeS{sub 2}, is discussed with regard to its use in photocatalysis. Application of FeS{sub 2} in coal hydrogenolysis reactions has improved yields of short chain hydrocarbons significantly compared to conventional FeS{sub 2} powders.

Wilcoxon, J.P.; Martino, T.; Klavetter, E.; Sylwester, A.P.

1993-08-01T23:59:59.000Z

11

Metallic carbon materials  

DOE Patents (OSTI)

Novel metallic forms of planar carbon are described, as well as methods of designing and making them. Nonhexagonal arrangements of carbon are introduced into a graphite carbon network essentially without destroying the planar structure. Specifically a form of carbon comprising primarily pentagons and heptagons, and having a large density of states at the Fermi level is described. Other arrangements of pentagons and heptagons that include some hexagons, and structures incorporating squares and octagons are additionally disclosed. Reducing the bond angle symmetry associated with a hexagonal arrangement of carbons increases the likelihood that the carbon material will have a metallic electron structure.

Cohen, Marvin Lou (Berkeley, CA); Crespi, Vincent Henry (Darien, IL); Louie, Steven Gwon Sheng (Berkeley, CA); Zettl, Alexander Karlwalter (Kensington, CA)

1999-01-01T23:59:59.000Z

12

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

13

Materials and Processing Issues in Nanostructured Semiconductor ...  

Science Conference Proceedings (OSTI)

Recently studies indicate that the most noble metal, gold, on transition metal oxides could have important applications for room-temperature catalytic oxidation of...

14

Method of depositing wide bandgap amorphous semiconductor materials  

DOE Patents (OSTI)

A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

Ellis, Jr., Frank B. (Princeton Junction, NJ); Delahoy, Alan E. (Rocky Hill, NJ)

1987-09-29T23:59:59.000Z

15

Metal recovery from porous materials  

DOE Patents (OSTI)

The present invention relates to recovery of metals. More specifically, the present invention relates to the recovery of plutonium and other metals from porous materials using microwaves. The United States Government has rights in this invention pursuant to Contract No. DE-AC09-89SR18035 between the US Department of Energy and Westinghouse Savannah River Company.

Sturcken, E.F.

1991-01-01T23:59:59.000Z

16

Wide Bandgap Semiconductor Material Growth and Characterization  

Science Conference Proceedings (OSTI)

Mar 6, 2013 ... Advanced Materials for Power Electronics, Power Conditioning, and Power .... due to a historical lack of native substrates and challenges in selectively ... have been optimized to provide equal growth rates of both polarities.

17

Corrosion protective coating for metallic materials  

DOE Patents (OSTI)

Corrosion protective coatings for metallic materials, particularly aluminum and aluminum alloys, produced with simple, low-cost equipment and materials other than toxic metals or metal salts, or metal cyanides. The metallic material is cleaned, degreased, and deoxidized, the surface is converted to a substantially alkaline condition, and the surface is chemically sealed with inorganic metal compounds.

Buchheit, Rudolph G. (Albuquerque, NM); Martinez, Michael A. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

18

Metal recovery from porous materials  

DOE Patents (OSTI)

A method for recovering plutonium and other metals from materials by leaching comprising the steps of incinerating the materials to form a porous matrix as the residue of incineration, immersing the matrix into acid in a microwave-transparent pressure vessel, sealing the pressure vessel, and applying microwaves so that the temperature and the pressure in the pressure vessel increase. The acid for recovering plutonium can be a mixture of HBF.sub.4 and HNO.sub.3 and preferably the pressure is increased to at least 100 PSI and the temperature to at least 200.degree. C. The porous material can be pulverized before immersion to further increase the leach rate.

Sturcken, Edward F. (P.O. Box 900, Isle of Palms, SC 29451)

1992-01-01T23:59:59.000Z

19

Femtosecond laser interactions with semiconductor and dielectric materials  

SciTech Connect

Electronic excitation-relaxation processes induced by ultra-short laser pulses are studied numerically for semiconductors and dielectric materials (Si, quartz). A detailed kinetic approach is used in the calculations accounting for electron-photon-phonon, electron-phonon and electron-electron scatterings. In addition, both laser field ionization ranging from multi-photon to tunneling one, and electron impact (avalanche) ionization processes are included in the model. Based on the performed calculations we study the relaxation time as a function of laser parameters. It is shown that this time depends on the density of the created free carriers, which in turn is a nonlinear function of laser intensity. In addition, a simple damage criterion is proposed based on the mean electron energy density rather than on critical free electron density. This criterion gives a reasonable agreement with the available experimental data practically without adjustable parameters. Furthermore, the performed modeling provides energy absorbed in the target, conditions for damage of dielectric materials, as well as conditions for surface plasmon excitation and for periodic surface structure formation on the surface of semiconductor materials.

Shcheblanov, Nikita S.; Derrien, Thibault J. Y.; Itina, Tatiana E. [Laboratoire Hubert Curien, CNRS//Universite Jeann Monnet, 18 rue du Prof. Benoit Lauras, 42000 Saint-Etienne (France); Laboratoire Lasers, Plasmas et Procedes Photoniques, CNRS//Universite de la Mediterranee, 162 avenue de Luminy, 13288, Marseille (France); Laboratoire Hubert Curien, CNRS//Universite Jeann Monnet, 18 rue du Prof. Benoit Lauras, 42000 Saint-Etienne (France)

2012-07-30T23:59:59.000Z

20

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents (OSTI)

A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

Sopori, Bhushan L. (Denver, CO); Allen, Larry C. (Arvada, CO); Marshall, Craig (Littleton, CO); Murphy, Robert C. (Golden, CO); Marshall, Todd (Littleton, CO)

1998-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents (OSTI)

A method and apparatus are disclosed for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby. 44 figs.

Sopori, B.L.; Allen, L.C.; Marshall, C.; Murphy, R.C.; Marshall, T.

1998-05-26T23:59:59.000Z

22

Metal recovery from porous materials  

DOE Patents (OSTI)

A method is described for recovering plutonium and other metals from materials by leaching comprising the steps of incinerating the materials to form a porous matrix as the residue of incineration, immersing the matrix into acid in a microwave-transparent pressure vessel, sealing the pressure vessel, and applying microwaves so that the temperature and the pressure in the pressure vessel increase. The acid for recovering plutonium can be a mixture of HBF[sub 4] and HNO[sub 3] and preferably the pressure is increased to at least 100 PSI and the temperature to at least 200 C. The porous material can be pulverized before immersion to further increase the leach rate.

Sturcken, E.F.

1992-10-13T23:59:59.000Z

23

Surface passivation process of compound semiconductor material using UV photosulfidation  

DOE Patents (OSTI)

A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

Ashby, Carol I. H. (Edgewood, NM)

1995-01-01T23:59:59.000Z

24

Methods of use of semiconductor nanocrystal probes for treating a material  

Science Conference Proceedings (OSTI)

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon (Los Angeles, CA); Bruchez, Marcel (Belmont, CA); Alivisatos, Paul (Oakland, CA)

2007-04-27T23:59:59.000Z

25

Nanocomposite of graphene and metal oxide materials  

SciTech Connect

Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10C.

Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

2012-09-04T23:59:59.000Z

26

Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices  

SciTech Connect

Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices arent new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the devices efficiency and enable electronics manufacturers to more easily integrate them into their products.

None

2009-12-11T23:59:59.000Z

27

Materials Design of Advanced Performance Metal Catalysts  

SciTech Connect

The contribution of materials design to the fabrication of advanced metal catalysts is highlighted, with particular emphasis on the construction of relatively complex contact structures surrounding metal nanoparticles. Novel advanced metal catalysts can be synthesized via encapsulation of metal nanoparticles into oxide shells, immobilization of metal oxide core-shell structures on solid supports, post-modification of supported metal nanoparticles by surface coating, and premodification of supports before loading metal nanoparticles. Examples on how these materials structures lead to enhanced catalytic performance are illustrated, and a few future prospects are presented.

Ma, Zhen [ORNL; Dai, Sheng [ORNL

2008-01-01T23:59:59.000Z

28

Metal oxide composite dosimeter method and material  

DOE Patents (OSTI)

The present invention is a method of measuring a radiation dose wherein a radiation responsive material consisting essentially of metal oxide is first exposed to ionizing radiation. The metal oxide is then stimulating with light thereby causing the radiation responsive material to photoluminesce. Photons emitted from the metal oxide as a result of photoluminescence may be counted to provide a measure of the ionizing radiation.

Miller, Steven D. (Richland, WA)

1998-01-01T23:59:59.000Z

29

Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology, 1st edition  

Science Conference Proceedings (OSTI)

A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few ...

Ayse Erol; Ayse Erol

2008-03-01T23:59:59.000Z

30

Evaluation of Novel Semiconductor Materials Potentially Useful in Solar Cells: Cooperative Research and Development Final Report, CRADA number CRD-06-00172  

SciTech Connect

Evaluation of novel semiconductor materials potentially useful in solar cells. NREL will fabricate, test and analyze solar cells from EpiWorks' wafers produced in 2-3 separate growth campaigns. NREL will also characterize material from 2-3 separate EpiWorks material development campaigns. Finally, NREL will visit EpiWorks and help establish any necessary process, such as spectral CV measurements and III-V on Si metalization processes and help validate solar cell designs and performance.

Geisz, J.

2010-07-01T23:59:59.000Z

31

Process for producing chalcogenide semiconductors  

DOE Patents (OSTI)

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Noufi, R.; Chen, Y.W.

1985-04-30T23:59:59.000Z

32

Electrical and physical characteristics of HfLaON-gated metal-oxide-semiconductor capacitors with various nitrogen concentration profiles  

Science Conference Proceedings (OSTI)

The comparative studies of electrical and physical characteristics of HfLaON-gated metal-oxide-semiconductor (MOS) capacitors with various nitrogen concentration profiles (NCPs) were investigated. Various NCPs in HfLaON gate dielectrics were adjusted ... Keywords: Charge trapping, Current-conduction, High-k dielectric, Metal-oxide-semiconductor (MOS), Nitrogen concentration profiles (NCPs)

Chin-Lung Cheng; Jeng-Haur Horng; Hung-Yang Tsai

2011-02-01T23:59:59.000Z

33

Dopant type and/or concentration selective dry photochemical etching of semiconductor materials  

DOE Patents (OSTI)

A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

1987-01-01T23:59:59.000Z

34

Fractography of Powder Metal Materials  

Science Conference Proceedings (OSTI)

Failure Prevention: Supporting Safe Storage of Plutonium-Bearing Materials through Science, Engineering and Surveillance Fish Mouth Failure of tThe...

35

THE MINERALS, METALS & MATERIALS SOCIETY  

Science Conference Proceedings (OSTI)

Materials Transactions B are available to members at discounted prices. They may be purchased through Springer publishing at www.springerlink.com.

36

Nano- sized strontium titanate metal oxide semiconductor oxygen gas sensors.  

E-Print Network (OSTI)

??The project focuses on strontium titanate (SrTiO3> material, a very important material for oxygen sensors. The advantages of the material are low cost and stability (more)

Hu, Ying.

2008-01-01T23:59:59.000Z

37

MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics  

SciTech Connect

Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

Palmstrom, Chris [University of California, Santa Barbara

2009-07-01T23:59:59.000Z

38

Definition: Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Semiconductor Jump to: navigation, search Dictionary.png Semiconductor Any material that has a limited capacity for conducting an electric current. Certain semiconductors, including silicon, gallium arsenide, copper indium diselenide, and cadmium telluride, are uniquely suited to the photovoltaic conversion process.[1] View on Wikipedia Wikipedia Definition A semiconductor is a material which has electrical conductivity to a degree between that of a metal (such as copper) and that of an insulator (such as glass). Semiconductors are the foundation of modern solid state electronics, including transistors, solar cells, light-emitting diodes (LEDs), quantum dots and digital and analog integrated circuits. A semiconductor may have a number of unique properties, one of which is the

39

Sandia National Labs: PCNSC: Departments: Semiconductor and Optical  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductor & Optical Sciences Semiconductor & Optical Sciences > Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering Research Jeff Nelson Jerry A. Simmons Sr. Manager Idabelle Idabelle Courtney Admin. Asst. Departments Semiconductor and Optical Sciences The Semiconductor and Optical Sciences Department oversees the operations of the following departments providing new scientific knowledge that can lead to technology solutions in the areas of: Compound semiconductor optoelectronic materials and devices Chemical science to materials technologies, emphasizing the science and engineering of Metal Organic Chemical Vapor Deposition (MOCVD) Remote sensing and detection of WMD proliferation activities

40

P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same  

DOE Patents (OSTI)

An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

Guha, Subhendu (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1988-10-04T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Novel Methods for Deformation Testing of Metals and Materials  

Science Conference Proceedings (OSTI)

About this Symposium. Meeting, Materials Science & Technology 2012. Symposium, Novel Methods for Deformation Testing of Metals and Materials.

42

Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination  

DOE Patents (OSTI)

Metal strips deposited on a top surface of a semiconductor substrate are sintered at one temperature simultaneously with alloying a metal layer on the bottom surface at a second, higher temperature. This simultaneous sintering of metal strips and alloying a metal layer on opposite surfaces of the substrate at different temperatures is accomplished by directing infrared radiation through the top surface to the interface of the bottom surface with the metal layer where the radiation is absorbed to create a primary hot zone with a temperature high enough to melt and alloy the metal layer with the bottom surface of the substrate. Secondary heat effects, including heat conducted through the substrate from the primary hot zone and heat created by infrared radiation reflected from the metal layer to the metal strips, as well as heat created from some primary absorption by the metal strips combine to create secondary hot zones at the interfaces of the metal strips with the top surface of the substrate. These secondary hot zones are not as hot as the primary hot zone, but they are hot enough to sinter the metal strips to the substrate.

Sopori, B.L.

1991-03-19T23:59:59.000Z

43

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

44

Toward Photochemical Water Splitting Using Band-Gap-Narrowed Semiconductors and Transition-Metal Based Molecular Catalysts  

DOE Green Energy (OSTI)

We are carrying out coordinated theoretical and experimental studies of toward photochemical water splitting using band-gap-narrowed semiconductors (BGNSCs) with attached multi-electron molecular water oxidation and hydrogen production catalysts. We focus on the coupling between the materials properties and the H{sub 2}O redox chemistry, with an emphasis on attaining a fundamental understanding of the individual elementary steps in the following four processes: (1) Light-harvesting and charge-separation of stable oxide or oxide-derived semiconductors for solar-driven water splitting, including the discovery and characterization of the behavior of such materials at the aqueous interface; (2) The catalysis of the four-electron water oxidation by dinuclear hydroxo transition-metal complexes with quinonoid ligands, and the rational search for improved catalysts; (3) Transfer of the design principles learned from the elucidation of the DuBois-type hydrogenase model catalysts in acetonitrile to the rational design of two-electron hydrogen production catalysts for aqueous solution; (4) Combining these three elements to examine the function of oxidation catalysts on BGNSC photoanode surfaces and hydrogen production catalysts on cathode surfaces at the aqueous interface to understand the challenges to the efficient coupling of the materials functions.

Muckerman,J.T.; Rodriguez, J.A.; Fujita, E.

2009-06-07T23:59:59.000Z

45

Hydrogenated Bilayer Wurtzite SiC Nanofilms: A Two-Dimensional Bipolar Magnetic Semiconductor Material  

E-Print Network (OSTI)

Recently, a new kind of spintronics materials, bipolar magnetic semiconductor (BMS), has been proposed. The spin polarization of BMS can be conveniently controlled by a gate voltage, which makes it very attractive in device engineering. Now, the main challenge is finding more BMS materials. In this article, we propose that hydrogenated wurtzite SiC nanofilm is a two-dimensional BMS material. Its BMS character is very robust under the effect of strain, substrate, or even a strong electric field. The proposed two-dimensional BMS material paves the way to use this promising new material in an integrated circuit.

Yuan, Long; Yang, Jinlong

2012-01-01T23:59:59.000Z

46

System for characterizing semiconductor materials and photovoltaic device  

DOE Patents (OSTI)

Apparatus for detecting and mapping defects in the surfaces of polycrystalline material in a manner that distinguishes dislocation pits from grain boundaries includes a first laser of a first wavelength for illuminating a wide spot on the surface of the material, a second laser of a second relatively shorter wavelength for illuminating a relatively narrower spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate raster mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. A reflectance measurement of the piece of material is obtained by adding together the signals from the optical detection devices. In the case where the piece of material includes a photovoltaic device, the current induced in the device by the illuminating light can be measured with a current sensing amplifier after the light integrating sphere is moved away from the device.

Sopori, Bhushan L. (Denver, CO)

1996-01-01T23:59:59.000Z

47

System for characterizing semiconductor materials and photovoltaic device  

DOE Patents (OSTI)

Apparatus for detecting and mapping defects in the surfaces of polycrystalline material in a manner that distinguishes dislocation pits from grain boundaries includes a first laser of a first wavelength for illuminating a wide spot on the surface of the material, a second laser of a second relatively shorter wavelength for illuminating a relatively narrower spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate raster mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. A reflectance measurement of the piece of material is obtained by adding together the signals from the optical detection devices. In the case where the piece of material includes a photovoltaic device, the current induced in the device by the illuminating light can be measured with a current sensing amplifier after the light integrating sphere is moved away from the device. 22 figs.

Sopori, B.L.

1996-12-03T23:59:59.000Z

48

Microporous Metal Organic Materials for Hydrogen Storage  

DOE Green Energy (OSTI)

We have examined a number of Metal Organic Framework Materials for their potential in hydrogen storage applications. Results obtained in this study may, in general, be summarized as follows: (1) We have identified a new family of porous metal organic framework materials with the compositions M (bdc) (ted){sub 0.5}, {l_brace}M = Zn or Co, bdc = biphenyl dicarboxylate and ted = triethylene diamine{r_brace} that adsorb large quantities of hydrogen ({approx}4.6 wt%) at 77 K and a hydrogen pressure of 50 atm. The modeling performed on these materials agree reasonably well with the experimental results. (2) In some instances, such as in Y{sub 2}(sdba){sub 3}, even though the modeling predicted the possibility of hydrogen adsorption (although only small quantities, {approx}1.2 wt%, 77 K, 50 atm. hydrogen), our experiments indicate that the sample does not adsorb any hydrogen. This may be related to the fact that the pores are extremely small or may be attributed to the lack of proper activation process. (3) Some samples such as Zn (tbip) (tbip = 5-tert butyl isophthalate) exhibit hysteresis characteristics in hydrogen sorption between adsorption and desorption runs. Modeling studies on this sample show good agreement with the desorption behavior. It is necessary to conduct additional studies to fully understand this behavior. (4) Molecular simulations have demonstrated the need to enhance the solid-fluid potential of interaction in order to achieve much higher adsorption amounts at room temperature. We speculate that this may be accomplished through incorporation of light transition metals, such as titanium and scandium, into the metal organic framework materials.

S. G. Sankar; Jing Li; Karl Johnson

2008-11-30T23:59:59.000Z

49

Alkali metal protective garment and composite material  

DOE Patents (OSTI)

A protective garment and composite material providing satisfactory heat resistance and physical protection for articles and personnel exposed to hot molten alkali metals, such as sodium. Physical protection is provided by a continuous layer of nickel foil. Heat resistance is provided by an underlying backing layer of thermal insulation. Overlying outer layers of fireproof woven ceramic fibers are used to protect the foil during storage and handling.

Ballif, III, John L. (Salt Lake City, UT); Yuan, Wei W. (Seattle, WA)

1980-01-01T23:59:59.000Z

50

Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material  

DOE Patents (OSTI)

A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

McKee, Rodney Allen (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

51

High Performance Metallic Materials for Cost Sensitive Applications  

Science Conference Proceedings (OSTI)

Cost Effective Synthesis, Processing and Applications of Light-Weight. Metallic Materials . ... Prospects for Cost Reduction of Titanium Via Electrolysis .

52

Heterogeneous reaction mechanisms and kinetics relevant to the CVD of semiconductor materials  

DOE Green Energy (OSTI)

This report documents the state of the art in experimental and theoretical techniques for determining reaction mechanisms and chemical kinetics of heterogeneous reactions relevant to the chemical vapor deposition of semiconductor materials. It summarizes the most common ultra-high vacuum experimental techniques that are used and the types of rate information available from each. Several case studies of specific chemical systems relevant to the microelectronics industry are described. Theoretical methods for calculating heterogeneous reaction rate constants are also summarized.

Creighton, J.R.; Coltrin, M.E.

1994-03-01T23:59:59.000Z

53

Materials Sustainability: Digital Resource Center - Recycling Metals ...  

Science Conference Proceedings (OSTI)

Jul 2, 2008 ... This article describes metal production from primary and secondary resources, recovering metals from waste streams and environmental...

54

Fully Integrated Complementary Metal Oxide Semiconductor (CMOS) Bio-Assay Platform  

E-Print Network (OSTI)

Oxide Semiconductor (CMOS) Bio-Assay Platform by OctavianOxide Semiconductor (CMOS) Bio-Assay Platform by OctavianOxide Semiconductor (CMOS) Bio-Assay Platform by Octavian

Florescu, Octavian

2010-01-01T23:59:59.000Z

55

DISSOLUTION OF FISSILE MATERIALS CONTAINING TANTALUM METAL  

DOE Green Energy (OSTI)

The dissolution of composite materials containing plutonium (Pu) and tantalum (Ta) metals is currently performed in Phase I of the HB-Line facility. The conditions for the present flowsheet are the dissolution of 500 g of Pu metal in the 15 L dissolver using a 4 M nitric acid (HNO{sub 3}) solution containing 0.2 M potassium fluoride (KF) at 95 C for 4-6 h.[1] The Ta metal, which is essentially insoluble in HNO{sub 3}/fluoride solutions, is rinsed with process water to remove residual acid, and then burned to destroy classified information. During the initial dissolution campaign, the total mass of Pu and Ta in the dissolver charge was limited to nominally 300 g. The reduced amount of Pu in the dissolver charge coupled with significant evaporation of solution during processing of several dissolver charges resulted in the precipitation of a fluoride salt contain Pu. Dissolution of the salt required the addition of aluminum nitrate (Al(NO{sub 3}){sub 3}) and a subsequent undesired 4 h heating cycle. As a result of this issue, HB-Line Engineering requested the Savannah River National Laboratory (SRNL) to optimize the dissolution flowsheet to reduce the cycle time, reduce the risk of precipitating solids, and obtain hydrogen (H{sub 2}) generation data at lower fluoride concentrations.[2] Using samples of the Pu/Ta composite material, we performed three experiments to demonstrate the dissolution of the Pu metal using HNO{sub 3} solutions containing 0.15 and 0.175 M KF. When 0.15 M KF was used in the dissolving solution, 95.5% of the Pu in the sample dissolved in approximately 6 h. The undissolved material included a small amount of Pu metal and plutonium oxide (PuO{sub 2}) solids. Complete dissolution of the metal would have likely occurred if the dissolution time had been extended. This assumption is based on the steady increase in the Pu concentration observed during the last several hours of the experiment. We attribute the formation of PuO{sub 2} to the complexation of fluoride by the Pu. The fluoride became unavailable to catalyze the dissolution of PuO{sub 2} as it formed on the surface of the metal. The mass of Pu dissolved is equivalent to the dissolution of 343 g of Pu in the HB-Line dissolvers. In the initial experiment with 0.175 M KF in the solution, we achieved complete dissolution of the Pu in 6 h. The mass of Pu dissolved scales to the dissolution of 358 g of Pu in the HB-Line dissolvers. The second experiment using 0.175 M KF was terminated after approximately 6 h following the dissolution of 92.7% of the Pu in the sample; however, dissolution of additional Pu was severely limited due to the slow dissolution rate observed beyond approximately 4 h. A small amount of PuO{sub 2} was also produced in the solution. The slow rate of dissolution was attributed to the diminishing surface area of the Pu and a reduction in the fluoride activity due to complexation with Pu. Given time (>4 h), the Pu metal may have dissolved using the original solution or a significant portion may have oxidized to PuO{sub 2}. If the metal oxidized to PuO{sub 2}, we expect little of the material would have dissolved due to the fluoride complexation and the low HNO{sub 3} concentration. The mass of Pu dissolved in the second experiment scales to the dissolution of 309 g of Pu in the HB-Line dissolvers. Based on the data from the Pu/Ta dissolution experiments we recommend the use of 4 M HNO{sub 3} containing 0.175 M KF for the dissolution of 300 g of Pu metal in the 15 L HB-Line dissolver. A dissolution temperature of nominally 95 C should allow for essentially complete dissolution of the metal in 6 h. Although the H{sub 2} concentration in the offgas from the experiments was at or below the detection limit of the gas chromatograph (GC) used in these experiments, small concentrations (<3 vol %) of H{sub 2} are typically produced in the offgas during Pu metal dissolutions. Therefore, appropriate controls must be established to address the small H{sub 3} generation rates in accordance with this work and the earlier flowsheet demonstrated

Rudisill, T; Mark Crowder, M; Michael Bronikowski, M

2007-05-29T23:59:59.000Z

56

Metal-Semiconductor Transitions in Nanoscale Vanadium Dioxide - Thin Films, Subwavelength Holes, and Nanoparticles.  

E-Print Network (OSTI)

??Large-volume (bulk) vanadium dioxide (VO2) is an unusual material that undergoes a critical transition from insulating-like to metal-like when the temperature is raised above approximately (more)

Donev, Eugenii U.

2008-01-01T23:59:59.000Z

57

DISSOLUTION OF FISSILE MATERIALS CONTAINING TANTALUM METAL  

Science Conference Proceedings (OSTI)

The dissolution of composite materials containing plutonium (Pu) and tantalum (Ta) metals is currently performed in Phase I of the HB-Line facility. The conditions for the present flowsheet are the dissolution of 500 g of Pu metal in the 15 L dissolver using a 4 M nitric acid (HNO{sub 3}) solution containing 0.2 M potassium fluoride (KF) at 95 C for 4-6 h.[1] The Ta metal, which is essentially insoluble in HNO{sub 3}/fluoride solutions, is rinsed with process water to remove residual acid, and then burned to destroy classified information. During the initial dissolution campaign, the total mass of Pu and Ta in the dissolver charge was limited to nominally 300 g. The reduced amount of Pu in the dissolver charge coupled with significant evaporation of solution during processing of several dissolver charges resulted in the precipitation of a fluoride salt contain Pu. Dissolution of the salt required the addition of aluminum nitrate (Al(NO{sub 3}){sub 3}) and a subsequent undesired 4 h heating cycle. As a result of this issue, HB-Line Engineering requested the Savannah River National Laboratory (SRNL) to optimize the dissolution flowsheet to reduce the cycle time, reduce the risk of precipitating solids, and obtain hydrogen (H{sub 2}) generation data at lower fluoride concentrations.[2] Using samples of the Pu/Ta composite material, we performed three experiments to demonstrate the dissolution of the Pu metal using HNO{sub 3} solutions containing 0.15 and 0.175 M KF. When 0.15 M KF was used in the dissolving solution, 95.5% of the Pu in the sample dissolved in approximately 6 h. The undissolved material included a small amount of Pu metal and plutonium oxide (PuO{sub 2}) solids. Complete dissolution of the metal would have likely occurred if the dissolution time had been extended. This assumption is based on the steady increase in the Pu concentration observed during the last several hours of the experiment. We attribute the formation of PuO{sub 2} to the complexation of fluoride by the Pu. The fluoride became unavailable to catalyze the dissolution of PuO{sub 2} as it formed on the surface of the metal. The mass of Pu dissolved is equivalent to the dissolution of 343 g of Pu in the HB-Line dissolvers. In the initial experiment with 0.175 M KF in the solution, we achieved complete dissolution of the Pu in 6 h. The mass of Pu dissolved scales to the dissolution of 358 g of Pu in the HB-Line dissolvers. The second experiment using 0.175 M KF was terminated after approximately 6 h following the dissolution of 92.7% of the Pu in the sample; however, dissolution of additional Pu was severely limited due to the slow dissolution rate observed beyond approximately 4 h. A small amount of PuO{sub 2} was also produced in the solution. The slow rate of dissolution was attributed to the diminishing surface area of the Pu and a reduction in the fluoride activity due to complexation with Pu. Given time (>4 h), the Pu metal may have dissolved using the original solution or a significant portion may have oxidized to PuO{sub 2}. If the metal oxidized to PuO{sub 2}, we expect little of the material would have dissolved due to the fluoride complexation and the low HNO{sub 3} concentration. The mass of Pu dissolved in the second experiment scales to the dissolution of 309 g of Pu in the HB-Line dissolvers. Based on the data from the Pu/Ta dissolution experiments we recommend the use of 4 M HNO{sub 3} containing 0.175 M KF for the dissolution of 300 g of Pu metal in the 15 L HB-Line dissolver. A dissolution temperature of nominally 95 C should allow for essentially complete dissolution of the metal in 6 h. Although the H{sub 2} concentration in the offgas from the experiments was at or below the detection limit of the gas chromatograph (GC) used in these experiments, small concentrations (dissolutions. Therefore, appropriate controls must be established to address the small H{sub 3} generation rates in accordance with this work and the earlier flowsheet demonstrated

Rudisill, T; Mark Crowder, M; Michael Bronikowski, M

2007-05-29T23:59:59.000Z

58

Nanoporous Metal-Inorganic Materials for Storage and Capture ...  

Nanoporous Metal-Inorganic Materials for Storage and Capture of Hydrogen, Carbon Dioxide (CO2) and Other Gases Lawrence Berkeley National Laboratory

59

Application of Metal Injection Molding to Soft Magnetic Materials  

Science Conference Proceedings (OSTI)

Advances in Current Activated Tip-Based Sintering (CATS) Advances in Synthesis and Densification of Heterogeneous Materials Application of Metal Injection...

60

Metal Foams Infiltrated Commercial Phase Change Material for ...  

Science Conference Proceedings (OSTI)

The metal foam and PCM is assumed to be in thermal equilibrium. When the energy ... High Efficiency Materials for Dye-Sensitized Solar Cells Improvement of...

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Metal Dusting [Corrosion and Mechanics of Materials] - Nuclear...  

NLE Websites -- All DOE Office Websites (Extended Search)

Site Map Help Join us on Facebook Follow us on Twitter NE on Flickr Corrosion and Mechanics of Materials Metal Dusting Bookmark and Share R&D 100 AWARD The "Materials resistant...

62

Recent advances as materials of functional metal-organic frameworks  

Science Conference Proceedings (OSTI)

Metal-organic frameworks (MOFs), also known as hybrid inorganic-organic materials, represent an emerging class of materials that have attracted the imagination of solid-state chemists because MOFs combine unprecedented levels of porosity with a range ...

Xiao-Lan Tong, Hai-Lu Lin, Jian-Hua Xin, Fen Liu, Min Li, Xia-Ping Zhu

2013-01-01T23:59:59.000Z

63

III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.  

DOE Green Energy (OSTI)

The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

2003-12-01T23:59:59.000Z

64

Wafer-fused semiconductor radiation detector  

DOE Patents (OSTI)

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

2002-01-01T23:59:59.000Z

65

Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics  

E-Print Network (OSTI)

The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a promising material for photovoltaics - and multicrystalline silicon for solar cells. In addition, this technique was shown to be appropriate for imaging of polishing-induced defects as well as such huge defects as "pin holes". Besides, previously unexplained "anomalous" (cubic power) dependence of signal of the scanning mid-IR-laser microscope in the optical-beam-induced light scattering mode on the photoexcitation power obtained for mechanically polished samples has now been attributed to the excess carrier scattering on charged linear defects, likely dislocation lines. The conclusion is made in the article that the scanning mid-IR-laser microscopy may serve as very effective tool for defect investigations in materials for modern photovoltaics.

Kalinushkin, V P; Yuryev, V A; 10.1016/S0927-0248(00)00076-3

2011-01-01T23:59:59.000Z

66

Californium--palladium metal neutron source material  

DOE Patents (OSTI)

Californium, as metal or oxide, is uniformly dispersed throughout a noble metal matrix, provided in compact, rod or wire form. A solution of californium values is added to palladium metal powder, dried, blended and pressed into a compact having a uni-form distribution of californium. The californium values are decomposed to californium oxide or metal by heating in an inert or reducing atmosphere. Sintering the compact to a high density closes the matrix around the dispersed californium. The sintered compact is then mechanically shaped into an elongated rod or wire form. (4 claims, no drawings) (Official Gazette)

Dahlen, B.L.; Mosly, W.C. Jr.; Smith, P.K.; Albenesius, E.L.

1974-01-22T23:59:59.000Z

67

Characterization of Minerals, Metals and Materials 2014  

Science Conference Proceedings (OSTI)

Jul 15, 2013... carbon, electronic, magnetic and optical materials, energy materials, ... Comparison between Bio-composite Based on Green HDPE/ Brazil...

68

ITP Materials: Development of Materials Resistant to Metal Dustiing Degradation  

NLE Websites -- All DOE Office Websites (Extended Search)

INDUSTRIAL INDUSTRIAL TECHNOLOGIES PROGRAM Bringing you a prosperous future where energy is clean, abundant, reliable, and affordable Energy Efficiency and Renewable Energy U.S. Department of Energy Degradation of metallic structural compo- nents by metal dusting is a major issue in plants such as those involved in hydrogen production, ammonia synthesis, methanol reforming, and syngas (H 2 /CO mixtures) pro- duction. Metal dusting is also experienced at high temperatures in the oxidizing-carbur- izing environments that are prevalent in the heat-treating industry and in processes that involve direct reduction in the production of iron. While experiments have proved that metal dusting does occur, industries could not develop an approach to combat this problem because of a lack of understanding

69

International Minerals, Metals, and Materials Societies  

Science Conference Proceedings (OSTI)

Korean Institute of Metals (KIM): Room 301, Deoyang Building, 51-8 Susong- Dong, Chongro-ku, Seoul, 110-140, Korea Telephone: 82 02 734 0593, Fax 82 02...

70

Development of a Hydrogen, Metal-Insulator-Semiconductor (MIS) Sensor for Use in the Headspace of Distribution Transformers: Feasibility Study  

Science Conference Proceedings (OSTI)

This report describes metal-insulator-semiconductor (MIS) chemical sensors used to detect hydrogen in transformer headspaces and discusses their design, operating characteristics, and response to hydrogen in mixed-gas environments. It addresses several technical issues regarding MIS sensor fabrication and the use of MIS sensors to monitor hydrogen fault-gas levels in the headspace of transformers. A new design overcomes problems encountered in some earlier attempts to fabricate a reliable MIS hydrogen se...

2003-09-29T23:59:59.000Z

71

Resource Efficient Metal and Material Recycling  

Science Conference Proceedings (OSTI)

... and Social - Licence to Operate (Legislation, consumer, policy, theft, manual labour ... Material and Energy Beneficiation of the Automobile Shredder Residues ... Sustainable Production of c-Si Solar Cell Materials A Competitive Advantage...

72

ON THE POSSIBILITY OF MAKING AN OHMIC CONTACT ON A SILICON SEMICONDUCTOR BY RUBBING IN A METAL  

SciTech Connect

A method of producing an ohmic contact between n or p type silicon semiconductors and a tungsten wire is presented. Instead of abrading the silicon in order to prcduce a "disturbed laaer" at the junction. the silicon was etched for a few minutes with a 10% solution of KOH at approximately 100 deg C and then contacted with a rotating disk of one of the following metals: Mo, Fe, brass, Sn. Ta, bronze, Ni, Cu, and Al. For comparison, junctions ground instead of etched before the friction process were also investigated. Of the metals tested Al and Ni produced ohmic contacts as good with the etching as with the abrasion. A proposed explanation for the gocd ohnfc contaci caused by rubbing in a metal on an etched surface is thai high temperatures produced locally during the rubbing in cause diffusion of the metal into the semiconductor, and metal oxides are formed which act as abrasive particles. Voltage-current characteristics and two photomicrographs are included. (TTT)

Kirvalidize, I.D.; Zhukov, V.F.

1959-10-01T23:59:59.000Z

73

Advanced Metallic Materials: Technological Exploitation of ...  

Science Conference Proceedings (OSTI)

Deformation Mechanism for Macroscopic Ductility of Advanced Materials Effect of Lead and Bismuth Additions on the Machinability of Yellow Brass Alloys.

74

Characterization of Minerals, Metals and Materials - Programmaster ...  

Science Conference Proceedings (OSTI)

Aug 2, 2010 ... Application of Conical Beam X-Ray Tomography to Multi-Phase Materials ... Digital Construction and Characterization of Reticulated Porous...

75

Recycling of Metals and Engineered Materials IV  

Science Conference Proceedings (OSTI)

Jun 25, 2008 ... Edited: 9/15/2010 at 2:24 PM by Materials Sustainability: Digital Resource Center Moderator. Comment on Posting Quote Top Bottom...

76

Integrated Computational Materials Engineering for Metallic ...  

Science Conference Proceedings (OSTI)

... an increase in new alloys and tempers for each successive product cycle. ... to Determine Probabilistic Materials Behavior for Zr Nuclear Fuel Clad Tubes.

77

Aluminum - Fly Ash Metal Matrix Composites as Advanced Automobile Material  

Science Conference Proceedings (OSTI)

Metal matrix composites such as silicon carbide-aluminum, alumina-aluminum, and graphite-aluminum represent a class of emerging materials with significant potential for commercial use in the auto and aerospace industries. In industrial foundry trials, a joint industry and Department of Energy project demonstrated a promising new process for producing a low cost aluminum metal matrix composite containing fly ash particles.

2001-08-16T23:59:59.000Z

78

Controlled Metal Photodeposition  

A reliable syntheses of semiconductor-metal heterostructure has been developed to enable application of materials in catalytic, magnetic, and opto-electronic devices, and Iowa State University, The Ames Laboratory's Contractor, is looking for ...

79

ITP Materials: Poster - Development of Materials Resistant to Metal Dusting Degradation  

NLE Websites -- All DOE Office Websites (Extended Search)

metal dusting phenomenon metal dusting phenomenon in simulated process environments ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------ ITP Materials, Sensors, and Automation, and Glass Project and Portfolio Review Meeting, June 21-24, Arlington, Virginia. K. Natesan, Z. Zeng, and D. L. Rink Energy Technology Division, Argonne National Laboratory, Argonne, Illinois, 60439 Introduction Metal dusting is a metal loss process that occurs in hot reactive gases The prerequisite for metal dusting is that carbon activity in the gas phase has to be >>1 Metal ends up as fine powder Pitting and crevice attack are common forms

80

Graded core/shell semiconductor nanorods and nanorod barcodes  

DOE Patents (OSTI)

Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

Alivisatos, A. Paul (Oakland, CA); Scher, Erik C. (San Francisco, CA); Manna, Liberato (Lecce, IT)

2010-12-14T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Graded core/shell semiconductor nanorods and nanorod barcodes  

DOE Patents (OSTI)

Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

2013-03-26T23:59:59.000Z

82

Time-resolved THz studies of carrier dynamics in semiconductors, superconductors, and strongly-correlated electron materials  

Science Conference Proceedings (OSTI)

Perhaps the most important aspect of contemporary condensed matter physics involves understanding strong Coulomb interactions between the large number of electrons in a solid. Electronic correlations lead to the emergence of new system properties, such as metal-insulator transitions, superconductivity, magneto-resistance, Bose-Einstein condensation, the formation of excitonic gases, or the integer and fractional Quantum Hall effects. The discovery of high-Tc superconductivity in particular was a watershed event, leading to dramatic experimental and theoretical advances in the field of correlated-electron systems. Such materials often exhibit competition between the charge, lattice, spin, and orbital degrees of freedom, whose cause-effect relationships are difficult to ascertain. Experimental insight into the properties of solids is traditionally obtained by time-averaged probes, which measure e.g., linear optical spectra, electrical conduction properties, or the occupied band structure in thermal equilibrium. Many novel physical properties arise from excitations out of the ground state into energetically higher states by thermal, optical, or electrical means. This leads to fundamental interactions between the system's constituents, such as electron-phonon and electron-electron interactions, which occur on ultrafast timescales. While these interactions underlie the physical properties of solids, they are often only indirectly inferred from time-averaged measurements. Time-resolved spectroscopy, consequently, is playing an ever increasing role to provide insight into light-matter interaction, microscopic processes, or cause-effect relationships that determine the physics of complex materials. In the past, experiments using visible and near-infrared femtosecond pulses have been extensively employed, e.g. to follow relaxation and dephasing processes in metals and semiconductors. However, many basic excitations in strongly-correlated electron systems and nanoscale materials occur at lower energies. The terahertz (THz) regime is particularly rich in such fundamental resonances. This includes ubiquitous lattice vibrations and low-energy collective oscillations of conduction charges. In nanoscale materials, band structure quantization also yields novel infrared and THz transitions, including intersubband absorption in quantum wells. The formation of excitons in turn leads to low-energy excitations analogous to inter-level transitions in atoms. In transition-metal oxides, fundamental excitation gaps arise from charge pairing into superconducting condensates and other correlated states. This motivates the use of ultrafast THz spectroscopy as a powerful tool to study light-matter interactions and microscopic processes in nanoscale and correlated-electron materials.A distinct advantage of coherent THz pulses is that the amplitude and phase of the electric field can be measured directly, as the THz fields are coherent with the fs pulses from which they are generated. Using THz time-domain spectroscopy (THz-TDS), both the real and imaginary parts of the response functions (such as the dielectric function) are obtained directly without the need for Kramers?Kronig transforms. The THz response can also be expressed in terms of absorption and refractive index, or as the optical conductivity. The optical conductivity describes the current response of a many-body system to an electric field, an ideal tool to study conducting systems. A second important advantage is the ultrafast time resolution that results from the short temporal duration of the THz time-domain sources. In particular, optical-pump THz-probe spectroscopy enables a delicate probe of the transient THz conductivity after optical photoexcitation. These experiments can provide insight into quasiparticle interactions, phase transitions, or nonequilibrium dynamics. In this chapter we will provide many such examples. Since THz spectroscopy of solids is a quickly expanding field

Kaindl, Robert A.; Averitt, Richard D.

2006-11-14T23:59:59.000Z

83

Vibronic states in organic semiconductors based on non-metal naphthalocyanine. Detection of heterocyclic phthalocyanine compounds in a flexible dielectric matrix  

Science Conference Proceedings (OSTI)

The vibronic properties of semiconductor structures based on non-metal naphthalocyanine molecules are studied using IR and Raman spectroscopy methods. New absorption lines in the transmission spectra of such materials are detected and identified. Three transmission lines are observed in the range 2830-3028 cm{sup -1}, which characterize carbon-hydrogen bonds of peripheral molecular groups. Their spectral positions are 2959, 2906, and 2866 cm{sup -1}. It is detected that the phthalocyanine ring can also exhibit its specific vibronic properties in the Raman spectra at 767, 717, and 679 cm{sup -1}. The naphthalocyanine molecule in the organic dielectric matrix of microfibers is described using IR spectroscopy. It is shown that the set of vibrations characterizing the isoindol group, pyrrole ring, naphtha group, and C-H bonds, allows an accurate enough description of the vibronic states of the naphthalocyanine complex in complex heterostructures to be made. The spectral range with fundamental modes, characterizing a naphthalocyanine semiconductor in a heterostructure, is 600-1600 cm{sup -1}. A comparison of the compositions of complex systems with a similar heterostructure containing lutetium diphthalocyanine demonstrated few errors.

Belogorokhov, I. A., E-mail: jugqwerty@mail.ru [State Research and Project Institute of Rare-Metal Industry GIREDMET (Russian Federation); Tikhonov, E. V. [Moscow State University (Russian Federation); Dronov, M. A. [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation); Belogorokhova, L. I. [Moscow State University (Russian Federation); Ryabchikov, Yu. V. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Tomilova, L. G.; Khokhlov, D. R. [Moscow State University (Russian Federation)

2012-01-15T23:59:59.000Z

84

Electrochemical removal of material from metallic work  

DOE Patents (OSTI)

Deburring, polishing, surface forming and the like are carried out by electrochemical machining with conformable electrode means including an electrically conducting and an insulating web. The surface of the work to be processed is covered by a deformable electrically insulating web or cloth which is perforated and conforms with the work. The web is covered by a deformable perforated electrically conducting screen electrode which also conforms with, and is insulated from, the work by the insulating web. An electrolyte is conducted through the electrode and insulating web and along the work through a perforated elastic member which engages the electrode under pressure pressing the electrode and web against the work. High current under low voltage is conducted betwen the electrode and work through the insulator, removing material from the work. Under the pressure of the elastic member, the electrode and insulator continue to conform with the work and the spacing between the electrode and work is maintained constant.

Csakvary, Tibor (Wilkens Township, Allegheny County, PA); Fromson, Robert E. (Wilkens Township, Allegheny County, PA)

1980-05-13T23:59:59.000Z

85

Semiconductors and sustainability : energy and materials use in integrated circuit manufacturing  

E-Print Network (OSTI)

Semiconductors have propelled an incredible revolution in the way we generate, access, store, and communicate information; the effects of this revolution have transformed culture, society, and the economy. At the same time, ...

Branham, Matthew S

2008-01-01T23:59:59.000Z

86

High capacity nickel battery material doped with alkali metal cations  

SciTech Connect

A high capacity battery material is made, consisting essentially of hydrated Ni(II) hydroxide, and about 5 wt. % to about 40 wt. % of Ni(IV) hydrated oxide interlayer doped with alkali metal cations selected from potassium, sodium and lithium cations.

Jackovitz, John F. (Monroeville, PA); Pantier, Earl A. (Penn Hills, PA)

1982-05-18T23:59:59.000Z

87

Development of materials resistant to metal dusting degradation.  

DOE Green Energy (OSTI)

The deposition of carbon from carbonaceous gaseous environments is prevalent in many chemical and petrochemical processes such as, hydrogen-, ammonia-, and methanol-reforming systems, syngas production systems, and iron-ore reduction plants. One of the major consequences of carbon deposition is the degradation of structural materials by a phenomenon known as ''metal dusting''. There are two major issues of importance in metal dusting. First is formation of coke and subsequent deposition of coke on metallic structural components. Second is the initiation and subsequent propagation of metal dusting degradation of the structural alloy. In the past, we reported on the mechanism for metal dusting of Fe- and Ni-base alloys. In this report, we present metal dusting data on both Fe- and Ni-base alloys after exposure in high and atmospheric pressure environments that simulate the gas chemistry in operating hydrogen reformers. We have also measured the progression of pits by measuring the depth as a function of exposure time for a variety of Fe- and Ni-base structural alloys. We have clearly established the role of transport of iron in forming a non-protective spinel phase in the initiation process and presence of carbon transfer channels in the oxide scale for the continued propagation of pits, by nano-beam X-ray analysis using the advance photon source (APS), Raman scattering, and SEM/EDX analysis. In this report, we have developed correlations between weight loss and pit progression rates and evaluated the effects of carbon activity, system pressure, and alloy chemistry, on weight loss and pit propagation. To develop pit propagation data for the alloys without incurring substantial time for the initiation of pits, especially for the Ni-base alloys that exhibit incubation times of thousands of hours, a pre-pitting method has been developed. The pre-pitted alloys exhibited pit propagation rates similar to those of materials tested without pre-pitting. We have also developed a substantial body of metal-dusting data on the performance of Fe- and Ni-base weldments. During the course of this project, we have developed new Ni-base and Cu-base alloys and tested them in simulated metal dusting environments at 1 atm and at high pressures. Results clearly showed superior performance of both classes of alloys in resisting metal dusting. We also developed an approach to mitigate metal dusting by performing an intermediate oxidation step for extending the life of alloys in which metal dusting has initiated and pits are in progression. Finally, we have analyzed several components that have failed in plants such as hydrogen plant, pilot plant reformer, and a gas boiler.

Natesan, K.; Zeng, Z.; Nuclear Engineering Division

2007-12-07T23:59:59.000Z

88

Development of materials resistant to metal dusting degradation.  

Science Conference Proceedings (OSTI)

Metal dusting corrosion has been a serious problem in the petroleum and petrochemical industries, such as reforming and syngas production systems. This form of deterioration has led to worldwide material loss for 50 years. For the past three years, we have studied the mechanism of metal dusting for Fe- and Ni-base alloys. In this report, we present a correlation between the weight loss and depth of pits that form in Ni-base alloys. Nickel-base alloys were also tested at 1 and 14.8 atm (210 psi), in a high carbon activity environment. Higher system pressure was found to accelerate corrosion in most Ni-base alloys. To reduce testing time, a pre-pitting method was developed. Mechanical scratches on the alloy surface led to fast metal dusting corrosion. We have also developed preliminary data on the performance of weldments of several Ni-base alloys in a metal dusting environment. Finally, Alloy 800 tubes and plates used in a reformer plant were examined by scanning electron microscopy, energy dispersive X-ray, and Raman spectroscopy. The oxide scale on the surface of the Alloy 800 primarily consists of Fe{sub 1+x}Cr{sub 2-X}O{sub 4} spinel phase with high Fe content. Carbon can diffuse through this oxide scale. It was discovered that the growth of metal dusting pits could be stopped by means of a slightly oxidized alloy surface. This leads to a new way to solve metal dusting problem.

Natesan, K.; Zeng, Z.

2006-04-24T23:59:59.000Z

89

Semiconductor nanowire thermoelectric materials and devices, and processes for producing same  

DOE Patents (OSTI)

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

Lagally, Max G. (Madison, WI); Evans, Paul G. (Madison, WI); Ritz, Clark S. (Middleton, WI)

2011-02-15T23:59:59.000Z

90

Semiconductor nanowire thermoelectric materials and devices, and processes for producing same  

DOE Patents (OSTI)

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

Lagally, Max G; Evans, Paul G; Ritz, Clark S

2013-09-17T23:59:59.000Z

91

Chemistry and Applications of Metal-Organic Materials  

E-Print Network (OSTI)

Developing the synthetic control required for the intentional 3-D arrangement of atoms remains a holy grail in crystal engineering and materials chemistry. The explosive development of metal-organic materials in recent decades has shed light on the above problem. Their properties can be tuned by varying the organic and/or inorganic building units. In addition, their crystallinity makes it possible to determine their structures via the X-ray diffraction method. This dissertation will focus on the chemistry and applications of two kinds of metal-organic materials, namely, metal-organic frameworks (MOFs) and metal-organic polyhedra (MOP). MOFs are coordination polymers. Their permanent porosity makes them a good gas sponge. In the first section, an isoreticular series of MOFs with dendritic hexacarboxylate ligands has been synthesized and characterized structurally. One of the MOFs in this series, PCN-68, has a Langmuir surface area as high as 6033 m2 g-1. The MOFs also possess excellent gas (H2, CH4, and CO2) adsorption capacity. In the second section, a NbO-type MOF, PCN-46, was constructed based on a polyyne-coupled di-isophthalate linker formed in situ. Its lasting porosity was confirmed by N2 adsorption isotherm, and its H2, CH4 and CO2 adsorption capacity was examined at 77 K and 298 K over a wide pressure range (0-110 bar). Unlike MOFs, MOP are discrete porous coordination nanocages. In the third section, a MOP covered with bulky triisopropylsilyl group was synthesized, which exhibits a thermosensitive gate opening property. This material demonstrates a molecular sieving effect at a certain temperature range, which could be used for gas separation purpose. In the last section, a MOP covered with alkyne group was synthesized through kinetic control. The postsynthetic modification via click reaction with azide-terminated polyethylene glycol turned them into metallomicelles, which showed controlled release of an anticancer drug 5-fluorouracil. In summary, two kinds of metal-organic materials have been discussed in this dissertation, with the applications in gas storage, gas separation, and drug delivery. These findings greatly enrich the chemistry and applications of metal-organic materials.

Zhao, Dan

2010-12-01T23:59:59.000Z

92

Photoelectrosynthesis at semiconductor electrodes  

DOE Green Energy (OSTI)

The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

Nozik, A. J.

1980-12-01T23:59:59.000Z

93

C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric  

Science Conference Proceedings (OSTI)

Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al"2O"3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electrical ... Keywords: ALD Al2O3, CMOS integration, Ge MOSCAP, Ge epitaxial film, RTO

Shih Hsuan Tang; Chien I. Kuo; Hai Dang Trinh; Mantu Hudait; Edward Yi Chang; Ching Yi Hsu; Yung Hsuan Su; Guang-Li Luo; Hong Quan Nguyen

2012-09-01T23:59:59.000Z

94

Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si???xGex/Si virtual substrates  

E-Print Network (OSTI)

We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si??.??Ge??.?? virtual substrates. The poor interface between silicon dioxide (SiO??) and the Ge channel ...

Lee, Minjoo L.

95

Hydrogen incorporation induced metal-semiconductor transition in ZnO:H thin films sputtered at room temperature  

Science Conference Proceedings (OSTI)

The room temperature deposited ZnO:H thin films having high conductivity of 500 Ohm-Sign {sup -1} cm{sup -1} and carrier concentration reaching 1.23 Multiplication-Sign 10{sup 20} cm{sup -3} were reactively sputter deposited on glass substrates in the presence of O{sub 2} and 5% H{sub 2} in Ar. A metal-semiconductor transition at 165 K is induced by the increasing hydrogen incorporation in the films. Hydrogen forms shallow donor complex with activation energy of {approx}10-20 meV at oxygen vacancies (V{sub O}) leading to increase in carrier concentration. Hydrogen also passivates V{sub O} and V{sub Zn} causing {approx}4 times enhancement of mobility to 25.4 cm{sup 2}/V s. These films have potential for use in transparent flexible electronics.

Singh, Anil; Chaudhary, Sujeet; Pandya, D. K. [Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)] [Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)

2013-04-29T23:59:59.000Z

96

Scrap metal management issues associated with naturally occurring radioactive material  

Science Conference Proceedings (OSTI)

Certain industrial processes sometimes generate waste by-products that contain naturally occurring radioactive material (NORM) at elevated concentrations. Some industries, including the water treatment, geothermal energy, and petroleum industries, generate scrap metal that may be contaminated with NORM wastes. Of these three industries, the petroleum industry probably generates the largest quantity of NORM-contaminated equipment, conservatively estimated at 170,000 tons per year. Equipment may become contaminated when NORM-containing scale or sludge accumulates inside water-handling equipment. The primary radionuclides of concern in these NORM wastes are radium-226 and radium-228. NORM-contaminated equipment generated by the petroleum industry currently is managed several ways. Some equipment is routinely decontaminated for reuse; other equipment becomes scrap metal and may be disposed of by burial at a licensed landfill, encapsulation inside the wellbore of an abandoned well, or shipment overseas for smelting. In view of the increased regulatory activities addressing NORM, the economic burden of managing NORM-contaminated wastes, including radioactive scrap metal, is likely to continue to grow. Efforts to develop a cost-effective strategy for managing radioactive scrap metal should focus on identifying the least expensive disposition options that provide adequate protection of human health and the environment. Specifically, efforts should focus on better characterizing the quantity of radioactive scrap available for recycle or reuse, the radioactivity concentration levels, and the potential risks associated with different disposal options.

Smith, K.P.; Blunt, D.L.

1995-08-01T23:59:59.000Z

97

2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012  

Science Conference Proceedings (OSTI)

The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

GLASER, EVAN

2012-08-17T23:59:59.000Z

98

Comparison between chemical vapor deposited and physical vapor deposited WSi{sub 2} metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors  

Science Conference Proceedings (OSTI)

We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi{sub 2} metal gate process for In{sub 0.53}Ga{sub 0.47}As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al{sub 2}O{sub 3} as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al{sub 2}O{sub 3} shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process.

Ong, B. S.; Pey, K. L. [Advanced Materials for Micro and Nano-Systems, Singapore-MIT Alliance, Singapore 637460 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Ong, C. Y.; Tan, C. S. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Antoniadis, D. A. [Advanced Materials for Micro and Nano-Systems, Singapore-MIT Alliance, Singapore 637460 (Singapore); Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Fitzgerald, E. A. [Advanced Materials for Micro and Nano-Systems, Singapore-MIT Alliance, Singapore 637460 (Singapore); Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2011-05-02T23:59:59.000Z

99

Electrochemical lithiation and delithiation for control of magnetic properties of nanoscale transition metal oxides  

E-Print Network (OSTI)

Transition metal oxides comprise a fascinating class of materials displaying a variety of magnetic and electronic properties, ranging from half-metallic ferromagnets like CrO2, ferrimagnetic semiconductors like Fey's, and ...

Sivakumar, Vikram

2008-01-01T23:59:59.000Z

100

Energy Conversion Application of Chemicurrents Induced in Metal-Semiconductor Nanostuctured Devices.  

E-Print Network (OSTI)

??Hydrogen is one the most attractive and suitable energy systems for generation of power in the future with high efficiencies and renewable properties. Nanoscale materials, (more)

Dasari, Suhas Kiran K.

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Semiconductor devices incorporating multilayer interference regions  

DOE Patents (OSTI)

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31T23:59:59.000Z

102

Accelerated Publication: Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric  

Science Conference Proceedings (OSTI)

Ga"2O"3(Gd"2O"3) [GGO] 3.5nm-thick, with an in situ Al"2O"3 cap 1.5nm thick, has been directly deposited on Ge substrate without employing interfacial passivation layers. The equivalent oxide thickness (EOT) of the gate stack is 1.38-nm. The metal-oxide-semiconductor ... Keywords: EOT, Germanium, High-? dielectric, MOS

L. K. Chu; T. H. Chiang; T. D. Lin; Y. J. Lee; R. L. Chu; J. Kwo; M. Hong

2012-03-01T23:59:59.000Z

103

Ceramic superconductor/metal composite materials employing the superconducting proximity effect  

DOE Patents (OSTI)

Superconducting composite materials having particles of superconducting material disposed in a metal matrix material with a high electron-boson coupling coefficient (.lambda.). The superconducting particles can comprise any type of superconductor including Laves phase materials, Chevrel phase materials, A15 compounds, and perovskite cuprate ceramics. The particles preferably have dimensions of about 10-500 nanometers. The particles preferably have dimensions larger than the superconducting coherence length of the superconducting material. The metal matrix material has a .lambda. greater than 0.2, preferably the .lambda. is much higher than 0.2. The metal matrix material is a good proximity superconductor due to its high .lambda.. When cooled, the superconductor particles cause the metal matrix material to become superconducting due to the proximity effect. In cases where the particles and the metal matrix material are chemically incompatible (i.e., reactive in a way that destroys superconductivity), the particles are provided with a thin protective metal coating. The coating is chemically compatible with the particles and metal matrix material. High Temperature Superconducting (HTS) cuprate ceramic particles are reactive and therefore require a coating of a noble metal resistant to oxidation (e.g., silver, gold). The proximity effect extends through the metal coating. With certain superconductors, non-noble metals can be used for the coating.

Holcomb, Matthew J. (Manhattan Beach, CA)

2002-01-01T23:59:59.000Z

104

Performance characterization of microtomography with complementary metal-oxide-semiconductor detectors for computer-aided defect inspection  

Science Conference Proceedings (OSTI)

We developed a computer-aided defect inspection system based on computed tomography (CT). The system consists of a homemade small cone-beam CT (CBCT) system and a graphical toolbox, which is used to extract a computer-aided design (CAD) model from the CT data. In the small CBCT system, the x-ray imaging detector is based on a complementary metal-oxide-semiconductor photodiode array in conjunction with a scintillator. Imaging performance of the detector was evaluated in terms of modulation-transfer function, noise-power spectrum, and detective quantum efficiency. The tomographic imaging performance of the small CBCT system was evaluated in terms of signal-to-noise ratio and contrast-to-noise ratio. The graphical toolbox to support defect inspection incorporates various functional tools such as volume rendering, segmentation, triangular-mesh data generation, and data reduction. All the tools have been integrated in a graphical-user interface form. The developed system can provide rapid visual inspection as well as quantitative evaluation of defects by comparing the extracted CAD file with the original file, if available, of an object. The performance of the developed system is demonstrated with experimental CT volume data.

Kim, Ho Kyung; Yun, Seungman; Han, Jong Chul; Youn, Hanbean; Cho, Min Kook; Lim, Chang Hwy [School of Mechanical Engineering, Pusan National University, Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Heo, Sung Kyn; Shon, Cheol-Soon [Sensor Business Division, E-WOO Technology Co., Ltd., Bora-dong, Giheung, Gyeonggi-do 449-904 (Korea, Republic of); Kim, Seong-Sik; Cho, Bong Hae [School of Dentistry, Pusan National University, Ami-dong, Seo-gu, Busan 602-739 (Korea, Republic of); Achterkirchen, Thorsten Graeve [Rad-icon Imaging Corp., Belick Street, Santa Clara, CA 95054-2404 (United States)

2009-05-01T23:59:59.000Z

105

CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class  

DOE Patents (OSTI)

A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film is built up upon a semiconductor-based material and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component.

McKee, Rodney Allen (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

1998-01-01T23:59:59.000Z

106

Method of doping a semiconductor  

DOE Patents (OSTI)

A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

Yang, Chiang Y. (Miller Place, NY); Rapp, Robert A. (Columbus, OH)

1983-01-01T23:59:59.000Z

107

Method of bonding metals to ceramics and other materials  

DOE Patents (OSTI)

A composite and method of forming same wherein the composite has a non-metallic portion and an alloy portion wherein the alloy comprises an alkali metal and a metal which is an electrical conductor such as Cu, Ag, Al, Sn or Au and forms an alloy with the alkali metal. A cable of superconductors and composite is also disclosed.

Gruen, D.M.; Krauss, A.R.; DeWald, A.P.; Chienping Ju; Rigsbee, J.M.

1993-01-05T23:59:59.000Z

108

A comparative study of semiconductor-based plasmonic metamaterials  

E-Print Network (OSTI)

Recent metamaterial (MM) research faces several problems when using metal-based plasmonic components as building blocks for MMs. The use of conventional metals for MMs is limited by several factors: metals such as gold and silver have high losses in the visible and near-infrared (NIR) ranges and very large negative real permittivity values, and in addition, their optical properties cannot be tuned. These issues that put severe constraints on the device applications of MMs could be overcome if semiconductors are used as plasmonic materials instead of metals. Heavily doped, wide bandgap oxide semiconductors could exhibit both a small negative real permittivity and relatively small losses in the NIR. Heavily doped oxides of zinc and indium were already reported to be good, low loss alternatives to metals in the NIR range. Here, we consider these transparent conducting oxides (TCOs) as alternative plasmonic materials for many specific applications ranging from surface-plasmon-polariton waveguides to MMs with hype...

Naik, Gururaj V; 10.1016/j.metmat.2010.11.001

2011-01-01T23:59:59.000Z

109

Pressure Resistance Welding of High Temperature Metallic Materials  

Science Conference Proceedings (OSTI)

Pressure Resistance Welding (PRW) is a solid state joining process used for various high temperature metallic materials (Oxide dispersion strengthened alloys of MA957, MA754; martensitic alloy HT-9, tungsten etc.) for advanced nuclear reactor applications. A new PRW machine has been installed at the Center for Advanced Energy Studies (CAES) in Idaho Falls for conducting joining research for nuclear applications. The key emphasis has been on understanding processing-microstructure-property relationships. Initial studies have shown that sound joints can be made between dissimilar materials such as MA957 alloy cladding tubes and HT-9 end plugs, and MA754 and HT-9 coupons. Limited burst testing of MA957/HT-9 joints carried out at various pressures up to 400oC has shown encouraging results in that the joint regions do not develop any cracking. Similar joint strength observations have also been made by performing simple bend tests. Detailed microstructural studies using SEM/EBSD tools and fatigue crack growth studies of MA754/HT-9 joints are ongoing.

N. Jerred; L. Zirker; I. Charit; J. Cole; M. Frary; D. Butt; M. Meyer; K. L. Murty

2010-10-01T23:59:59.000Z

110

Metals and ceramics division materials science program annual progress report for period ending June 30, 1980  

Science Conference Proceedings (OSTI)

Research progress is summarized concerning the structure of metals; deformation and mechanical properties; physical properties and transport phenomena; radiation effects; and engineering materials.

McHargue, C.J.

1980-10-01T23:59:59.000Z

111

WEB RESOURCE: MIL-HDBK-5H: Metallic Materials and ... - TMS  

Science Conference Proceedings (OSTI)

Feb 9, 2007 ... This handbook contains standardized design values and related design information for metallic materials and structural elements used in...

112

FACT SHEET The Minerals, Metals & Materials Society (TMS) is the ...  

Science Conference Proceedings (OSTI)

primary metals production to basic research and the advanced applications of ... and manufacturing systems and processes at significantly reduced costs.

113

Multifunctional Metallic and Refractory Materials for Energy Efficient Handling of Molten Metals  

SciTech Connect

The goal of the project was to extend the lifetime of hardware submerged in molten metal by an order of magnitude and to improve energy efficiency of molten metal handling process. Assuming broad implementation of project results, energy savings in 2020 were projected to be 10 trillion BTU/year, with cost savings of approximately $100 million/year. The project team was comprised of materials research groups from West Virginia University and the Missouri University of Science and Technology formerly University of Missouri Rolla, Oak Ridge National Laboratory, International Lead and Zinc Research Organization, Secat and Energy Industries of Ohio. Industry partners included six suppliers to the hot dip galvanizing industry, four end-user steel companies with hot-dip Galvanize and/or Galvalume lines, eight refractory suppliers, and seven refractory end-user companies. The results of the project included the development of: (1) New families of materials more resistant to degradation in hot-dip galvanizing bath conditions were developed; (2) Alloy 2020 weld overlay material and process were developed and applied to GI rolls; (3) New Alloys and dross-cleaning procedures were developed for Galvalume processes; (4) Two new refractory compositions, including new anti-wetting agents, were identified for use with liquid aluminum alloys; (5) A new thermal conductivity measurement technique was developed and validated at ORNL; (6) The Galvanizing Energy Profiler Decision Support System (GEPDSS)at WVU; Newly Developed CCW Laser Cladding Shows Better Resistance to Dross Buildup than 316L Stainless Steel; and (7) A novel method of measuring the corrosion behavior of bath hardware materials. Project in-line trials were conducted at Southwire Kentucky Rod and Cable Mill, Nucor-Crawfordsville, Nucor-Arkansas, Nucor-South Carolina, Wheeling Nisshin, California Steel, Energy Industries of Ohio, and Pennex Aluminum. Cost, energy, and environmental benefits resulting from the project are due to: i) a reduced number of process shutdowns to change hardware or lining material, ii) reduced need to produce new hardware or lining material, iii) improved product quality leads to reduced need to remake product or manufacturing of new product, iv) reduction in contamination of melt from degradation of refractory and metallic components, v) elimination of worn hardware will increase efficiency of process, vi) reduced refractory lining deterioration or formation of a less insulating phase, would result in decreased heat loss through the walls. Projected 2015 benefits for the U.S. aluminum industry, assuming 21% market penetration of improved refractory materials, are energy savings of approximately 0.2 trillion BTU/year, cost savings of $2.3 billion/year and carbon reductions of approximately 1.4 billion tons/year. The carbon reduction benefit of the project for the hot-dip galvanize and aluminum industries combined is projected to be approximately 2.2 billion tons/year in 2015. Pathways from research to commercialization were based on structure of the projects industrial partnerships. These partnerships included suppliers, industrial associations, and end users. All parties were involved in conducting the project including planning and critiquing the trials. Supplier companies such as Pyrotech Metaullics, Stoody, and Duraloy have commercialized products and processes developed on the project.

Xingbo Liu; Ever Barbero; Bruce Kang; Bhaskaran Gopalakrishnan; James Headrick; Carl Irwin

2009-02-06T23:59:59.000Z

114

Alkali metal recovery from carbonaceous material conversion process  

DOE Patents (OSTI)

In a coal gasification operation or similar conversion process carried out in the presence of an alkali metal-containing catalyst wherein solid particles containing alkali metal residues are produced in the gasifier or similar reaction zone, alkali metal constitutents are recovered from the particles by withdrawing and passing the particles from the reaction zone to an alkali metal recovery zone in the substantial absence of molecular oxygen and treating the particles in the recovery zone with water or an aqueous solution in the substantial absence of molecular oxygen. The solution formed by treating the particles in the recovery zone will contain water-soluble alkali metal constituents and is recycled to the conversion process where the alkali metal constituents serve as at least a portion of the alkali metal constituents which comprise the alkali metal-containing catalyst. Preventing contact of the particles with oxygen as they are withdrawn from the reaction zone and during treatment in the recovery zone avoids the formation of undesirable alkali metal constituents in the aqueous solution produced in the recovery zone and insures maximum recovery of water-soluble alkali metal constituents from the alkali metal residues.

Sharp, David W. (Seabrook, TX); Clavenna, LeRoy R. (Baytown, TX); Gorbaty, Martin L. (Fanwood, NJ); Tsou, Joe M. (Galveston, TX)

1980-01-01T23:59:59.000Z

115

Method of passivating semiconductor surfaces  

DOE Patents (OSTI)

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Wanlass, Mark W. (Golden, CO)

1990-01-01T23:59:59.000Z

116

Method of passivating semiconductor surfaces  

DOE Patents (OSTI)

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Wanlass, M.W.

1990-06-19T23:59:59.000Z

117

Self assembled multi-layer nanocomposite of graphene and metal oxide materials  

SciTech Connect

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2013-10-22T23:59:59.000Z

118

Characterization of Minerals, Metals, and Materials (Electronic Format)  

Science Conference Proceedings (OSTI)

May 1, 2007 ... 133-136]The Leaching Behavior of Heavy Metals in MSWI Bottom Ash by Carbonation Reaction with Diffeent Water Content[pp.

119

Properties of Energetic Materials Reinforced by Open-Cell Metal ...  

Science Conference Proceedings (OSTI)

Thus the idea of using open-cell metal foams as heat conducting elements seems ... Composites Fabricated by Mechanical Alloying and Vacuum Hot Pressing.

120

LIGHT METALS 2007 Volume 6: The Material Recycling Industry  

Science Conference Proceedings (OSTI)

Environmental Management of Airborne Metal Emissions in the Recycling Industry [pp. 1173-1190] Karen Hagelstein and John E Heinze. Improved UBC Melting...

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

M. Bulk Metallic Glasses, Nanocrystalline Materials, and Ultrafine ...  

Science Conference Proceedings (OSTI)

Age Hardening of 7075 Alloy Processed by High-pressure Sliding (HPS) ... Atomic Structure and its Change during Glass Transition of Metallic Glasses.

122

Chemical Metrology for Metals, Ores, and Related Materials  

Science Conference Proceedings (OSTI)

... the following SRMs have been developed or renewed in collaboration with industry: Completed new and renewal SRMs for steel, silicon metal ...

2012-10-01T23:59:59.000Z

123

Semiconductors News  

Science Conference Proceedings (OSTI)

... Nhan Nguyen demonstrates how he performs optical measurements on a graphene-insulator-semiconductor sample structure. ...

2010-05-24T23:59:59.000Z

124

Processing method for forming dislocation-free SOI and other materials for semiconductor use  

DOE Patents (OSTI)

A method for preparing a silicon-on-insulator material having a relatively defect-free Si overlayer involves the implanting of oxygen ions within a silicon body and the interruption of the oxygen-implanting step to implant Si ions within the silicon body. The implanting of the oxygen ions develops an oxide layer beneath the surface of the silicon body, and the Si ions introduced by the Si ion-implanting step relieves strain which is developed in the Si overlayer during the implanting step without the need for any intervening annealing step. By relieving the strain in this manner, the likelihood of the formation of strain-induced defects in the Si overlayer is reduced. In addition, the method can be carried out at lower processing temperatures than have heretofore been used with SIMOX processes of the prior art. The principles of the invention can also be used to relieve negative strain which has been induced in a silicon body of relatively ordered lattice structure.

Holland, Orin Wayne (Oak Ridge, TN); Thomas, Darrell Keith (Kingston, TN); Zhou, Dashun (Sunnyvale, CA)

1997-01-01T23:59:59.000Z

125

The synthesis of inorganic semiconductor nanocrystalline materials for the purpose of creating hybrid organic/inorganic light-emitting devices  

E-Print Network (OSTI)

Colloidal semiconductor nanocrystals (NCs) or quantum dots (QDs) can be synthesized to efficiently emit light from the ultraviolet, across the entire visible spectrum, and into the near infrared. This is now possible due ...

Steckel, Jonathan S. (Jonathan Stephen)

2006-01-01T23:59:59.000Z

126

bylaws of the nuclear materials committee of the minerals, metals ...  

Science Conference Proceedings (OSTI)

The name of this technical committee shall be the Nuclear Materials. Committee ... aspects of materials, which are utilized in all areas of nuclear energy.

127

Low temperature production of large-grain polycrystalline semiconductors  

SciTech Connect

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Naseem, Hameed A. (Fayetteville, AR); Albarghouti, Marwan (Loudonville, NY)

2007-04-10T23:59:59.000Z

128

Ferromagnetism in Oxide Semiconductors  

SciTech Connect

In order to become a practical technology, semiconductor spintronics requires the discovery and utilization of ferromagnetic semiconductors which exhibit spin polarization in the majority carrier band at and above room temperature. Intrinsic remanent magnetization would allow spin polarized currents to be propagated in such materials without the need for a continuous magnetic field. However, the discovery and understanding of such materials is proving to be a grand challenge in solid-state science. Indeed, one of the 125 critical unanswered scientific questions recently posed in Science magazine asks, Is it possible to create magnetic semiconductors that work at room temperature?

Chambers, Scott A.; Droubay, Timothy; Wang, Chong M.; Rosso, Kevin M.; Heald, Steve M.; Schwartz, S. A.; Kittilstved, Kevin R.; Gamelin, Daniel R.

2006-11-01T23:59:59.000Z

129

Materials Science Semiconductor Materials Portal  

Science Conference Proceedings (OSTI)

... This project develops low-energy transmission electron diffraction, imaging, and ... Strain fields and phase distribution maps of indented Si ...

2012-12-31T23:59:59.000Z

130

Enabling Sustainability through the Physics of Metals & Materials ...  

Science Conference Proceedings (OSTI)

Mar 6, 2013 ... Heavy metals in natural water, industrial water and wastewaters are a worldwide ... complexes is released as HCN gas under strength acidic conditions ... Northern Regions of Russia as Alternative Sources of Pure Water for...

131

Electrode materials for the electrolysis of metal oxides  

E-Print Network (OSTI)

Carbon, tungsten, platinum, and iridium were examined as candidate anode materials for an electrolytic cell. The materials were pre-selected to endure high process temperatures and were characterized for inertness and high ...

Cooper, Benjamin D

2006-01-01T23:59:59.000Z

132

Lattice matched semiconductor growth on crystalline ...  

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or ...

133

bylaws of the refractory metals and materials committee of the ...  

Science Conference Proceedings (OSTI)

requirements of the bylaws and constitution of the Structural Materials. Division(s) and The Minerals, ... fulfill the eligibility requirement. Section 3: The term of...

134

Selected Metal Organic Framework and Molecular Sieve Materials ...  

Science Conference Proceedings (OSTI)

Symposium, Materials for CO2 Capture and Conversion ... Abstract Scope, Reduction of CO2 emissions from coal-burning power plants using...

135

bylaws of the composite materials committee of the minerals, metals ...  

Science Conference Proceedings (OSTI)

Emerging and developing technologies that possess fundamental features or characteristics of composite materials are also considered within the scope of the ...

136

SYNTHESIS OF LIGHT-WEIGHT METALLIC MATERIALS II: I ...  

Science Conference Proceedings (OSTI)

... Cho, Vice President of Rapidly Solidified Materials Research Center, (RASOM) , Chungnam National University, Taedok Science Town, Taejon 305-764 Korea...

137

Investigation on Aluminum-Based Amorphous Metallic Glass as New Anode Material in Lithium Ion Batteries  

E-Print Network (OSTI)

Aluminum based amorphous metallic glass powders were produced and tested as the anode materials for the lithium ion rechargeable batteries. Ground Al??Ni₁?La₁? was found to have a ...

Meng, Shirley Y.

138

Ordered porous mesostructured materials from nanoparticle-block copolymer self-assembly  

SciTech Connect

The invention provides mesostructured materials and methods of preparing mesostructured materials including metal-rich mesostructured nanoparticle-block copolymer hybrids, porous metal-nonmetal nanocomposite mesostructures, and ordered metal mesostructures with uniform pores. The nanoparticles can be metal, metal alloy, metal mixture, intermetallic, metal-carbon, metal-ceramic, semiconductor-carbon, semiconductor-ceramic, insulator-carbon or insulator-ceramic nanoparticles, or combinations thereof. A block copolymer/ligand-stabilized nanoparticle solution is cast, resulting in the formation of a metal-rich (or semiconductor-rich or insulator-rich) mesostructured nanoparticle-block copolymer hybrid. The hybrid is heated to an elevated temperature, resulting in the formation of an ordered porous nanocomposite mesostructure. A nonmetal component (e.g., carbon or ceramic) is then removed to produce an ordered mesostructure with ordered and large uniform pores.

Warren, Scott; Wiesner, Ulrich; DiSalvo, Jr., Francis J

2013-10-29T23:59:59.000Z

139

Variable temperature semiconductor film deposition  

DOE Patents (OSTI)

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Li, X.; Sheldon, P.

1998-01-27T23:59:59.000Z

140

Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride, carbide and carbonitride  

DOE Patents (OSTI)

A composite material having high hardness comprises a carbon nitrogen compound, such as CN{sub x} where x is greater than 0.1 and up to 1.33, deposited on a metal or metal compound selected to promote deposition of substantially crystalline CN{sub x}. The carbon nitrogen compound is deposited on a crystal plane of the metal or metal compound sufficiently lattice-matched with a crystal plane of the carbon nitrogen compound that the carbon nitrogen compound is substantially crystalline. A plurality of layers of the compounds can be formed in alternating sequence to provide a multi-layered, superlattice coating having a coating hardness in the range of 45--55 GPa, which corresponds to the hardness of a BN coating and approaches that of a diamond coating. 10 figs.

Wong, M.S.; Li, D.; Chung, Y.W.; Sproul, W.D.; Chu, X.; Barnett, S.A.

1998-07-07T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride carbide and carbonitride  

DOE Patents (OSTI)

A composite material having high hardness comprises a carbon nitrogen compound, such as CN{sub x} where x is greater than 0.1 and up to 1.33, deposited on a metal or metal compound selected to promote deposition of substantially crystalline CN{sub x}. The carbon nitrogen compound is deposited on a crystal plane of the metal or metal compound sufficiently lattice-matched with a crystal plane of the carbon nitrogen compound that the carbon nitrogen compound is substantially crystalline. A plurality of layers of the compounds can be formed in alternating sequence to provide a multi-layered, superlattice coating having a coating hardness in the range of 45--55 GPa, which corresponds to the hardness of a BN coating and approaches that of a diamond coating. 10 figs.

Wong, M.S.; Li, D.; Chung, Y.W.; Sproul, W.D.; Xi Chu; Barnett, S.A.

1998-03-10T23:59:59.000Z

142

Acoustic plane wave preferential orientation of metal oxide superconducting materials  

DOE Patents (OSTI)

A polycrystalline metal oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-X (where 0metal oxide in the form of a ceramic slip which has not yet set, orientation of the crystal basal planes parallel with the direction of desired current flow is accomplished by an applied acoustic plane wave in the acoustic or ultrasonic frequency range (either progressive or standing) in applying a torque to each crystal particle. The ceramic slip is then set and fired by conventional methods to produce a conductor with preferentially oriented grains and substantially enhanced current carrying capacity.

Tolt, Thomas L. (North Olmsted, OH); Poeppel, Roger B. (Glen Ellyn, IL)

1991-01-01T23:59:59.000Z

143

Primary cell of high energy density in which the anode active material is an alkali metal  

Science Conference Proceedings (OSTI)

A primary cell of high specific energy in which the anode active material is an alkali metal and the cathode active material is sulphur oxychloride which simultaneously acts as an electrolyte solvent, said electrolyte further containing a dissolved salt and a co-solvent. The co-solvent is chosen from among phosphoryl chloride and benzoyl chloride; the dissolved salt is lithium tetrachloroaluminate.

Gabano, J.

1983-02-01T23:59:59.000Z

144

Theoretical studies of surface reactions on metals and electronic materials  

DOE Green Energy (OSTI)

Studies of a variety of adsorbates on Ni have been completed; adsorption energies were determined for CH, CH[sub 2], CH[sub 3], H, NH[sub 3], H[sub 2]O, and C[sub 6]H[sub 6] on Ni(111). A refined calculation of the reaction of methane with Ni was completed. Other studies included H[sub 2] and SiH[sub 4] adsorption/decomposition on Si surfaces, Si-Si dimer bond length, activity energy barriers for reaction of CH[sub 4]and CH[sub 3]F with Si(111). Studies were begun on deposition of C on Ni(111). New directions were explored for reaction of methane with transition metal surfaces; work was completed for a Ni(111) surface containing a substitutional iron atom. Twenty abstracts of papers are presented.

Whitten, J.L.

1993-01-31T23:59:59.000Z

145

Semiconductor Analytics  

Science Conference Proceedings (OSTI)

... LED Lighting and Displays Solar PV Why Semiconductors? ... Potential Comments Solar PV 20.4 25-30% Politically driven. BP disaster will help. ...

2011-10-03T23:59:59.000Z

146

Metallic and Non-Metallic Materials for the Primary Support Structure  

Science Conference Proceedings (OSTI)

The primary support structure (PSS) is required for mechanical support of reactor module (RM) components and mounting of the RM to the spacecraft. The PSS would provide support and accept all loads associated with dynamic (e. g., launch and maneuvering) or thermally induced loading. Prior to termination of NRPCT involvement in Project Prometheus, the NRPCT Mechanical Systems team developed preliminary finite element models to gain a basic understanding of the behavior of the structure, but optimization of the models, specification of the final design, and materials selection were not completed. The Space Plant Materials team had evaluated several materials for potential use in the primary support structure, namely titanium alloys, beryllium, aluminum alloys and carbon-carbon composites. The feasibility of application of each material system was compared based on mass, stiffness, thermal expansion, and ease of fabrication. Due to insufficient data on environmental factors, such as temperatures and radiation, and limited modeling support, a final materials selection was not made.

RA Wolf; RP Corson

2006-02-21T23:59:59.000Z

147

Secondary cell with orthorhombic alkali metal/manganese oxide phase active cathode material  

DOE Patents (OSTI)

An alkali metal manganese oxide secondary cell is disclosed which can provide a high rate of discharge, good cycling capabilities, good stability of the cathode material, high specific energy (energy per unit of weight) and high energy density (energy per unit volume). The active material in the anode is an alkali metal and the active material in the cathode comprises an orthorhombic alkali metal manganese oxide which undergoes intercalation and deintercalation without a change in phase, resulting in a substantially linear change in voltage with change in the state of charge of the cell. The active material in the cathode is an orthorhombic structure having the formula M{sub x}Z{sub y}Mn{sub (1{minus}y)}O{sub 2}, where M is an alkali metal; Z is a metal capable of substituting for manganese in the orthorhombic structure such as iron, cobalt or titanium; x ranges from about 0.2 in the fully charged state to about 0.75 in the fully discharged state, and y ranges from 0 to 60 atomic %. Preferably, the cell is constructed with a solid electrolyte, but a liquid or gelatinous electrolyte may also be used in the cell. 11 figs.

Doeff, M.M.; Peng, M.Y.; Ma, Y.; Visco, S.J.; DeJonghe, L.C.

1996-09-24T23:59:59.000Z

148

Nanostructures, magnetic semiconductors and spintronics  

Science Conference Proceedings (OSTI)

The aim of this paper is to give a brief overview of recent advances in the area of semiconductor nanomaterials, which represent extremely promising applications for materials with the spin-polarized transport of the charge carriers. It is shown on the ... Keywords: Magnetic properties, Nanostructure, Semiconductor, Spin-polarized transport, Spintronics

Paata Kervalishvili; Alexander Lagutin

2008-08-01T23:59:59.000Z

149

Joining of dissimilar materials  

DOE Patents (OSTI)

A method of joining dissimilar materials having different ductility, involves two principal steps: Decoration of the more ductile material's surface with particles of a less ductile material to produce a composite; and, sinter-bonding the composite produced to a joining member of a less ductile material. The joining method is suitable for joining dissimilar materials that are chemically inert towards each other (e.g., metal and ceramic), while resulting in a strong bond with a sharp interface between the two materials. The joining materials may differ greatly in form or particle size. The method is applicable to various types of materials including ceramic, metal, glass, glass-ceramic, polymer, cermet, semiconductor, etc., and the materials can be in various geometrical forms, such as powders, fibers, or bulk bodies (foil, wire, plate, etc.). Composites and devices with a decorated/sintered interface are also provided.

Tucker, Michael C; Lau, Grace Y; Jacobson, Craig P

2012-10-16T23:59:59.000Z

150

Coated semiconductor devices for neutron detection  

DOE Green Energy (OSTI)

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

Klann, Raymond T. (Bolingbrook, IL); McGregor, Douglas S. (Whitmore Lake, MI)

2002-01-01T23:59:59.000Z

151

Study of metallic materials for solid oxide fuel cell interconnect applications.  

DOE Green Energy (OSTI)

Metallic interconnect acts as a gas separator and a gas distributor and therefore, it needs to function adequately in two widely different environments. The interconnect material will be exposed to air on one side and natural gas or coal-derived synthesis gas on the other side. The viable material for the interconnect application must be resistant not only to oxidation but also carburization in hydrocarbon containing low-oxygen environments. In addition, the scales that develop on the exposed surfaces must possess adequate electrical conductivity for them to function as current leads over long service life of the fuel cell. This report addresses five topics of interest for the development of metallic interconnects with adequate performance in fuel cells for long service life. The research conducted over the years and the conclusions reached were used to identify additional areas of research on materials for improved performance of components, especially metallic interconnects, in the complex fuel cell environments. This report details research conducted in the following areas: measurement of area specific electrical resistivity, corrosion performance in dual gas environments by experiments using alloy 446, long term corrosion performance of ferritic and austenitic alloys in hydrogen and methane-reformed synthesis fuel-gas environments, approaches to reduce the area resistance of metallic interconnect, and reduction of electrical resistivity of alumina scales on metallic interconnect. Based on the key requirements for metallic interconnects and the data developed on the corrosion behavior of candidate materials in meeting those requirements, several areas are recommended for further research to develop metallic interconnects with acceptable and reliable long-term performance in solid oxide fuel cells.

Natesan, K.; Zeng, Z.; Nuclear Engineering Division

2009-04-24T23:59:59.000Z

152

Lattice mismatched compound semiconductors and devices on silicon  

E-Print Network (OSTI)

III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and ...

Yang, Li, Ph. D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

153

Modeling the compressive deformation of metal micro-textured thermal interface materials using SEM geometry reconstruction  

Science Conference Proceedings (OSTI)

Idealized and simplified geometries are commonly used in finite element models to ease model creation and meshing. However, at smaller length-scales, the influence of geometrical imperfections and defects can significantly affect the accuracy of the ... Keywords: Buckling, Finite element modeling, Metal micro-textured thermal interface materials, Plastic deformation, SEM stereomicroscopy, Surface reconstruction

R. Kempers; P. Ahern; A. J. Robinson; A. M. Lyons

2012-02-01T23:59:59.000Z

154

Hydrogen storage material and process using graphite additive with metal-doped complex hydrides  

DOE Patents (OSTI)

A hydrogen storage material having improved hydrogen absorbtion and desorption kinetics is provided by adding graphite to a complex hydride such as a metal-doped alanate, i.e., NaAlH.sub.4. The incorporation of graphite into the complex hydride significantly enhances the rate of hydrogen absorbtion and desorption and lowers the desorption temperature needed to release stored hydrogen.

Zidan, Ragaiy (Aiken, SC); Ritter, James A. (Lexington, SC); Ebner, Armin D. (Lexington, SC); Wang, Jun (Columbia, SC); Holland, Charles E. (Cayce, SC)

2008-06-10T23:59:59.000Z

155

Heat transfer enhancement for thermal energy storage using metal foams embedded within phase change materials (PCMs)  

SciTech Connect

In this paper the experimental investigation on the solid/liquid phase change (melting and solidification) processes have been carried out. Paraffin wax RT58 is used as phase change material (PCM), in which metal foams are embedded to enhance the heat transfer. During the melting process, the test samples are electrically heated on the bottom surface with a constant heat flux. The PCM with metal foams has been heated from the solid state to the pure liquid phase. The temperature differences between the heated wall and PCM have been analysed to examine the effects of heat flux and metal foam structure (pore size and relative density). Compared to the results of the pure PCM sample, the effect of metal foam on solid/liquid phase change heat transfer is very significant, particularly at the solid zone of PCMs. When the PCM starts melting, natural convection can improve the heat transfer performance, thereby reducing the temperature difference between the wall and PCM. The addition of metal foam can increase the overall heat transfer rate by 3-10 times (depending on the metal foam structures and materials) during the melting process (two-phase zone) and the pure liquid zone. The tests for investigating the solidification process under different cooling conditions (e.g. natural convection and forced convection) have been carried out. The results show that the use of metal foams can make the sample solidified much faster than pure PCM samples, evidenced by the solidification time being reduced by more than half. In addition, a two-dimensional numerical analysis has been carried out for heat transfer enhancement in PCMs by using metal foams, and the prediction results agree reasonably well with the experimental data. (author)

Zhao, C.Y.; Lu, W.; Tian, Y. [School of Engineering, University of Warwick, CV4 7AL (United Kingdom)

2010-08-15T23:59:59.000Z

156

An Experimental Study of Deformation and Fracture of a Nanostructured Metallic Material  

E-Print Network (OSTI)

The mechanical properties of materials strongly depend on their microstructure. Therefore, engineering the material's microstructure can lead to improving its mechanical properties. One method for enhancing the strength of metallic materials consists of refining the grain size down to the nanometer scale. Such nanostructured materials possess remarkable strength without using conventional metallurgical strengthening methods. However, this strength often comes at the expense of workhardening capacity, thus favoring flow localization and loss of ductility and toughness. The deformation behavior of nanostructured metallic materials has been extensively studied in the literature. However, little is known of their fracture behavior. In this study, the mechanical behavior of a nanostructured, nearly pure material is investigated in order to link processing conditions, microstructure, and fracture locus in stress space. With focus laid on BCC materials which can undergo a ductile-to-brittle transition, Interstitial- Free (IF) steel is chosen. The microstructure is refined using Severe Plastic Deformation (SPD) to achieve ultra-fine grain (UFG) materials with grain sizes in the range 100nm- 1 mu m. Equal Channel Angular Extrusion (ECAE) is used to obtain three types of UFG-IF steel microstructures by varying the extrusion rate and processing temperature. The deformation behavior is investigated for the three UFG materials using round smooth bars and is compared with the behavior of the as-received material. The damage behavior and the fracture mechanisms are studied using tensile round notched bars with varying notch radii. The findings indicate a remarkable combination of strength and notch ductility at room temperature, including for the material with the finest microstructure. They also point to the need for careful characterization of temperature effects before such materials can be considered in structural applications.

Abdel Al, Nisrin Rizek

2009-12-01T23:59:59.000Z

157

Physiochemical characteristics of controlled low strength materials influencing the electrochemical performance and service life of metallic materials  

E-Print Network (OSTI)

Controlled Low Strength Materials (CLSM) are cementitious self-compacting materials, comprised of low cement content, supplementary cementing materials, fine aggregates, and water. CLSM is typically used as an alternative to conventional compacted granular backfill in applications, such as pavement bases, erosion control, bridge abutments, retaining walls, bedding and backfilling of pipelines. This dissertation presents the findings of an extensive study carried out to determine the corrosivity of CLSM on ductile iron and galvanized steel pipelines. The study was performed in two phases and evaluated more than 40 different CLSM mixture proportions for their corrosivity. An extensive literature survey was performed on corrosion of metals in soils and corrosion of reinforcement in concrete environments to determine possible influential factors. These factors were used as explanatory variables with multiple levels to identify the statistically significant factors. Empirical models were developed for percent mass loss of metals embedded in CLSM and exposed to different environments. The first and only service life models for ductile iron and galvanized steel pipes embedded in CLSM mixtures were developed. Models indicated that properly designed CLSM mixtures can provide an equal or longer service life for completely embedded ductile iron pipes. However, the service life of galvanized pipes embedded in CLSM should not be expected to be more than the service life provided by corrosive soils.

Halmen, Ceki

2005-12-01T23:59:59.000Z

158

Liquefaction process for solid carbonaceous materials containing alkaline earth metal humates  

DOE Patents (OSTI)

An improved liquefaction process wherein wall scale and particulate agglomeration during the liquefaction of solid carbonaceous materials containing alkaline earth metal humates is reduced and/or eliminated by subjecting the solid carbonaceous materials to controlled cyclic cavitation during liquefaction. It is important that the solid carbonaceous material be slurried in a suitable solvent or diluent during liquefaction. The cyclic cavitation may be imparted via pressure cycling, cyclic agitation and the like. When pressure cycling or the like is employed an amplitude equivalent to at least 25 psia is required to effectively remove scale from the liquefaction vessel walls.

Epperly, William R. (Summit, NJ); Deane, Barry C. (East Brunswick, NJ); Brunson, Roy J. (Buffalo Grove, IL)

1982-01-01T23:59:59.000Z

159

Rapid Separation Methods to Characterize Actinides and Metallic Impurities in Plutonium Scrap Materials at SRS  

SciTech Connect

The Nuclear Materials Stabilization and Storage Division at SRS plans to stabilize selected plutonium scrap residue materials for long term storage by dissolution processing and plans to stabilize other plutonium vault materials via high-temperature furnace processing. To support these nuclear material stabilization activities, the SRS Analytical Laboratories Department (ALD) will provide characterization of materials required prior to the dissolution or the high-firing of these materials. Lab renovations to install new analytical instrumentation are underway to support these activities that include glove boxes with simulated-process dissolution and high- pressure microwave dissolution capability. Inductively-coupled plasma atomic emission spectrometry (ICP-AES), inductively- coupled mass spectrometry (ICP-MS) and thermal-ionization mass spectrometry (TIMS) will be used to measure actinide isotopics and metallic impurities. New high-speed actinide separation methods have been developed that will be applied to isotopic characterization of nuclear materials by TIMS and ICP-MS to eliminate isobaric interferences between Pu-238 /U- 238 and Pu-241/Am-241. TEVA Resin, UTEVA Resin, and TRU Resin columns will be used with vacuum-assisted flow rates to minimize TIMS and ICP-MS sample turnaround times. For metallic impurity analysis, rapid column removal methods using UTEVA Resin, AGMP-1 anion resin and AG MP-50 cation resin have also been developed to remove plutonium and uranium matrix interferences prior to ICP-AES and ICP- MS measurements.

Maxwell, S.L. III [Westinghouse Savannah River Company, AIKEN, SC (United States); Jones, V.D.

1998-07-01T23:59:59.000Z

160

SEQUESTRATION OF METALS IN ACTIVE CAP MATERIALS: A LABORATORY AND NUMERICAL EVALUATION  

SciTech Connect

Active capping involves the use of capping materials that react with sediment contaminants to reduce their toxicity or bioavailability. Although several amendments have been proposed for use in active capping systems, little is known about their long-term ability to sequester metals. Recent research has shown that the active amendment apatite has potential application for metals contaminated sediments. The focus of this study was to evaluate the effectiveness of apatite in the sequestration of metal contaminants through the use of short-term laboratory column studies in conjunction with predictive, numerical modeling. A breakthrough column study was conducted using North Carolina apatite as the active amendment. Under saturated conditions, a spike solution containing elemental As, Cd, Co, Se, Pb, Zn, and a non-reactive tracer was injected into the column. A sand column was tested under similar conditions as a control. Effluent water samples were periodically collected from each column for chemical analysis. Relative to the non-reactive tracer, the breakthrough of each metal was substantially delayed by the apatite. Furthermore, breakthrough of each metal was substantially delayed by the apatite compared to the sand column. Finally, a simple 1-D, numerical model was created to qualitatively predict the long-term performance of apatite based on the findings from the column study. The results of the modeling showed that apatite could delay the breakthrough of some metals for hundreds of years under typical groundwater flow velocities.

Dixon, K.; Knox, A.

2012-02-13T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Hydrogen in semiconductors  

DOE Green Energy (OSTI)

After an incubation'' period in the 1970's and early 80's, during which the first hydrogen related centers were discovered and characterized in ultra-pure germanium, a sharp increase of research activity occurred after the discovery of shallow acceptor passivation in crystalline silicon. The aim of this review is to convey an insight into the rich, multifaceted physics and materials science which has emerged from the vast variety of experimental and theoretical studies of hydrogen in semiconductors. In order to arrive at the current understanding of hydrogen related phenomena in a logical way, each chapter will start with a brief review of the major experimental and theoretical advances of the past few years. Those who are interested to learn more about this fascinating area of semiconductor research are referred to reviews, to a number of conference proceedings volumes, and to an upcoming book which will contain authoritative chapters on most aspects of hydrogen in crystalline semiconductors. Some of the early art of semiconductor device processing can finally be put on a scientific foundation and new ways of arriving at advanced device structures begin to use what we have learned from the basic studies of hydrogen in semiconductors. 92 refs., 8 figs.

Haller, E.E. (California Univ., Berkeley, CA (USA) Lawrence Berkeley Lab., CA (USA))

1990-06-01T23:59:59.000Z

162

Dose dependence of strength after low-temperature irradiation in metallic materials  

Science Conference Proceedings (OSTI)

This study intends to review and characterize the low-temperature (irradiation hardening behaviors in metallic materials and to propose new interpretations on the dose dependence of strength, particularly in the pre-hardening and saturation regimes. The analysis results of yield stress-dose curves indicate that four dose-dependence regimes exist: the pre-hardening, main hardening, saturation, and embrittlement regimes. The semi-log plots of yield stress versus dose data revealed that the pre-hardening regime displaying zero-hardening or softening was common at least for the alloys with low dose data available. It was observed that the dose range of the pre-hardening regime increased with the strength of material, which indicates that slower initiation in irradiation hardening is expected when strength is higher. For the majority of the metallic materials analyzed, it was reconfirmed that the exponent of the power-law hardening function was evaluated to be about 0.5 in the main hardening regime and about 0.1 in the saturation regime. In these positive hardening regimes the low strength pure metals such as Fe, Ta, Cu, and Zr displayed lower hardening exponents. The minimum dose to the saturation of irradiation hardening was in the range of 0.003 0.08 dpa, depending on the category of materials. It was also reaffirmed that there exists a strong relationship between the saturation in irradiation hardening and the occurrence of plastic instability at yield.

Byun, Thak Sang [ORNL; Li, Meimei [Argonne National Laboratory (ANL); Farrell, Kenneth [ORNL

2013-01-01T23:59:59.000Z

163

Materials Reliability Program: Finite-Element Model Validation for Dissimilar Metal Butt-Welds (MRP-316)  

Science Conference Proceedings (OSTI)

Residual stresses imparted by the welding process are a principal factor in the process of primary water stress corrosion cracking (PWSCC) of Alloy 82/182 nickel-alloy dissimilar metal (DM) piping butt welds in pressurized water reactors (PWRs). Analytical models are frequently used to simulate the welding process in order to predict the residual stress distribution in the weld and base material as an input to crack growth calculations. The crack growth calculations, in turn, have demonstrated a high sen...

2011-12-20T23:59:59.000Z

164

Hydridable material for the negative electrode in a nickel-metal hydride storage battery  

SciTech Connect

A monophase hydridable material for the negative electrode of a nickel-metal hydride storage battery with a "Lave's phase" structure of hexagonal C14 type (MgZn.sub.2) has the general formula: Zr.sub.1-x Ti.sub.x Ni.sub.a Mn.sub.b Al.sub.c Co.sub.d V.sub.e where ##EQU1##

Knosp, Bernard (Neuilly-sur-Seine, FR); Bouet, Jacques (Paris, FR); Jordy, Christian (Dourdan, FR); Mimoun, Michel (Neuilly-sur-Marne, FR); Gicquel, Daniel (Lanorville, FR)

1997-01-01T23:59:59.000Z

165

AN EVALUATION OF POTENTIAL LINER MATERIALS FOR ELIMINATING FCCI IN IRRADIATED METALLIC NUCLEAR FUEL ELEMENTS  

Science Conference Proceedings (OSTI)

Metallic nuclear fuels are being looked at as part of the Global Nuclear Energy Program for transmuting longlive transuranic actinide isotopes contained in spent nuclear fuel into shorter-lived fission products. In order to optimize the performance of these fuels, the concept of using liners to eliminate the fuel/cladding chemical interactions that can occur during irradiation of a fuel element has been investigated. The potential liner materials Zr and V have been tested using solid-solid diffusion couples, consisting of liner materials butted against fuel alloys and against cladding materials. The couples were annealed at the relatively high temperature of 700C. This temperature would be the absolute maximum temperature present at the fuel/cladding interface for a fuel element in-reactor. Analysis was performed using a scanning electron microscope equipped with energy-dispersive and wavelengthdispersive spectrometers (SEM/EDS/WDS) to evaluate any developed diffusion structures. At 700C, minimal interaction was observed between the metallic fuels and either Zr or V. Similarly, limited interaction was observed between the Zr and V and the cladding materials. The best performing liner material appeared to be the V, based on amounts of interaction.

D. D. Keiser; J. I. Cole

2007-09-01T23:59:59.000Z

166

Wide Bandgap Semiconductors for Clean Energy Workshop: Summary...  

NLE Websites -- All DOE Office Websites (Extended Search)

Facilitator: Foundry service is from Defense Advanced Research Projects Agency (DARPA), Metal Oxide Semiconductor Implementation Service (MOSIS). There is an evaluation of...

167

LENS repair and modification of metal NW components:materials and applications guide.  

DOE Green Energy (OSTI)

Laser Engineered Net Shaping{trademark} (LENS{reg_sign}) is a unique, layer additive, metal manufacturing technique that offers the ability to create fully dense metal features and components directly from a computer solid model. LENS offers opportunities to repair and modify components by adding features to existing geometry, refilling holes, repairing weld lips, and many other potential applications. The material deposited has good mechanical properties with strengths typically slightly higher that wrought material due to grain refinement from a quickly cooling weld pool. The result is a material with properties similar to cold worked material, but without the loss in ductility traditionally seen with such treatments. Furthermore, 304L LENS material exhibits good corrosion resistance and hydrogen compatibility. This report gives a background of the LENS process including materials analysis addressing the requirements of a number of different applications. Suggestions are given to aid both the product engineer and the process engineer in the successful utilization of LENS for their applications. The results of testing on interface strength, machinability, weldability, corrosion resistance, geometric effects, heat treatment, and repair strategy testing are all included. Finally, the qualification of the LENS process is briefly discussed to give the user confidence in selecting LENS as the process of choice for high rigor applications. The testing showed LENS components to have capability in repair/modification applications requiring complex castings (W80-3 D-Bottle bracket), thin wall parts requiring metal to be rebuilt onto the part (W87 Firing Set Housing and Y-12 Test Rings), the filling of counterbores for use in reservoir reclamation welding (SRNL hydrogen compatibility study) and the repair of surface defects on pressure vessels (SRNL gas bottle repair). The material is machinable, as testing has shown that LENS deposited material machines similar to that of welded metal. Tool wear is slightly higher in LENS material than in wrought material, but not so much that one would be concerned with increased tooling cost. The LENS process achieved process qualification for the AY1E0125 D-Bottle Bracket from the W80-3 LEP program, and in the effort, also underwent testing in weapons environments. These tests included structural dynamic response testing and drop testing. The LENS deposited parts were compared in these tests with conventionally machined parts and showed equivalency to such an extent that the parts were accepted for use in parallel path subsystem-level weapon environment testing. The evaluation of LENS has shown that the process can be a viable option when either complete metal parts are needed or existing metal parts require modification or repair. The LENS Qualification Technology Investment team successfully investigated new applications for the LENS process and showed that it has great applicability across the Nuclear Weapons Complex as well as in other high rigor applications.

Smugeresky, John E. (Sandia National Laboratories, Livermore, CA); Gill, David Dennis; Oberhaus, Jason (BWXT Y-12); Adams, Thad (Savannah River National Laboratory); VanCamp, Chad (Kansas City Plant)

2006-11-01T23:59:59.000Z

168

A Sensor System Based on Semi-Conductor Metal Oxide Technology for In Situ Detection of Coal Fired Combustion Gases  

SciTech Connect

Sensor Research and Development Corporation (SRD) proposed a two-phase program to develop a robust, autonomous prototype analyzer for in situ, real-time detection, identification, and measurement of coal-fired combustion gases and perform field-testing at an approved power generation facility. SRD developed and selected sensor materials showing selective responses to carbon monoxide, carbon dioxide, nitric oxide, nitrogen dioxide, ammonia, sulfur dioxide and hydrogen chloride. Sensor support electronics were also developed to enable prototype to function in elevated temperatures without any issues. Field-testing at DOE approved facility showed the ability of the prototype to detect and estimate the concentration of combustion by-products accurately with relatively low false-alarm rates at very fast sampling intervals.

Brent Marquis

2007-05-31T23:59:59.000Z

169

Methodology of Materials Discovery in Complex Metal Hydrides Using Experimental and Computational Tools  

Science Conference Proceedings (OSTI)

We present a review of the experimental and theoretical methods used in the discovery of new metal-hydrogen materials systems for hydrogen storage applications. Rather than a comprehensive review of all new materials and methods used in the metal hydride community, we focus on a specific subset of successful methods utilizing theoretical crystal structure prediction methods, computational approaches for screening large numbers of compound classes, and medium-throughput experimental methods for the preparation of such materials. Monte Carlo techniques paired with a simplified empirical Hamiltonian provide crystal structure candidates that are refined using Density Functional Theory. First-principle methods using high-quality structural candidates are further screened for an estimate of reaction energetics, decomposition enthalpies, and determination of reaction pathways. Experimental synthesis utilizes a compacted-pellet sintering technique under high-pressure hydrogen at elevated temperatures. Crystal structure determination follows from a combination of Rietveld refinements of diffraction patterns and first-principles computation of total energies and dynamical stability of competing structures. The methods presented within are general and applicable to a wide class of materials for energy storage.

Majzoub, Eric H.; Ronnebro, Ewa

2012-02-22T23:59:59.000Z

170

Comparison of lithium and the eutectic lead lithium alloy, two candidate liquid metal breeder materials for self-cooled blankets  

Science Conference Proceedings (OSTI)

Liquid metals are attractive candidates for both near-term and long-term fusion applications. The subjects of this comparison are the differences between the two candidate liquid metal breeder materials Li and LiPb for use in breeding blankets in the areas of neutronics, magnetohydrodynamics, tritium control, compatibility with structural materials, heat extraction system, safety, and required R&D program. Both candidates appear to be promising for use in self-cooled breeding blankets which have inherent simplicity with the liquid metal serving as both breeders and coolant. The remaining feasibility question for both breeder materials is the electrical insulation between liquid metal and duct walls. Different ceramic coatings are required for the two breeders, and their crucial issues, namely self-healing of insulator cracks and radiation induced electrical degradation are not yet demonstrated. Each liquid metal breeder has advantages and concerns associated with it, and further development is needed to resolve these concerns.

Malang, S. [Kernforschungszentrum Karlsruhe GmbH (Germany); Mattas, R. [Argonne National Lab., IL (United States)

1994-06-01T23:59:59.000Z

171

Materials Down-selection Decisions Made within the DOE Metal Hydride Center of Excellence (MHCoE) - September-October 2007  

Fuel Cell Technologies Publication and Product Library (EERE)

Reports on which hydrogen storage materials offer potential for further research as decided by DOE's Metal Hydride Center of Excellence.

172

Metal Aminoboranes  

Metal aminoboranes of the formula M(NH.sub.2BH.sub.3).sub.n have been synthesized. Metal aminoboranes are hydrogen storage materials. Metal aminoboranes are also precursors for synthesizing other metal aminoboranes. Metal aminoboranes can be ...

173

Stable surface passivation process for compound semiconductors  

DOE Patents (OSTI)

A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

Ashby, Carol I. H. (Edgewood, NM)

2001-01-01T23:59:59.000Z

174

Semiconductor switch geometry with electric field shaping  

DOE Patents (OSTI)

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

Booth, Rex (Livermore, CA); Pocha, Michael D. (Livermore, CA)

1994-01-01T23:59:59.000Z

175

Business Case Slide 25: High-Value: Semiconductors - Description  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductors - Description Receipt of rare DUO crystals at ORNL Receipt of rare DUO2 crystals at ORNL Description Use DUO2 as a semiconductor material Computer CPU or RAM chips...

176

Photodeposition of Pt on Colloidal CdS and CdSe/CdS Semiconductor Nanostructures  

DOE Green Energy (OSTI)

Semiconductor photocatalysis has been identified as a promising avenue for the conversion of solar energy into environmentally friendly fuels, most notably by the production of hydrogen from water.[1-5] Nanometer-scale materials in particular have attracted considerable scientific attention as the building blocks for light-harvesting applications.[6,7] Their desirable attributes include tunability of the optical properties with size, amenability to relatively inexpensive low-temperature processing, and a high degree of synthetic sophistication leading to increasingly complex and multi-functional architectures. For photocatalysis in particular, the high surface-to-volume ratios in nanoscale materials should lead to an increased availability of carriers for redox reactions on the nanoparticle surface. Recombination of photoexcited carriers directly competes with photocatalytic activity.[3] Charge separation is often achieved with multi-component heterostructures. An early example is the case of TiO2 powders functionalized with Pt and RuO2 particles, where photoexcited electrons are transferred to Pt (the reduction site) and holes to RuO2 (the oxidation site).[8] More recently, many colloidally synthesized nanometer-scale metal-semiconductor heterostructures have been reported.[7,9,10] A majority of these structures are made by thermal methods.[7,10] We have chosen to study photochemical formation of metal-semiconductor heterostructures. The detailed understanding of the mechanisms involved in photodeposition of metals on nanometer-scale semiconductors is necessary to enable a high degree of synthetic control. At the same time, because the results of metal deposition can be directly observed by electron microscopy, it can be used to understand how factors such as nanocrystal composition, shape, carrier dynamics, and surface chemistry influence the photochemical properties of semiconductor nanocrystals. In this communication, we report on the photodeposition of Pt on colloidal CdS and CdSe/CdS core/shell nanocrystals. Among the II-VI semiconductors, CdS is of particular interest because it has the correct band alignment for water photolysis[2] and has been demonstrated to be photocatalytically active.[11-16] We have found that the photoexcitation of CdS and CdSe/CdS in the presence of an organometallic Pt precursor leads to deposition of Pt nanoparticles on the semiconductor surface. Stark differences are observed in the Pt nanoparticle location on the two substrates, and the photodeposition can be completely inhibited by the modification of the semiconductor surface. Our results suggest that tuning of the semiconductor band structure, spatial organization and surface chemistry should be crucial in the design of photocatalytic nanostructures.

Dukovic, Gordana; Merkle, Maxwell G.; Nelson, James H.; Hughes, Steven M.; Alivisatos, A. Paul

2008-08-06T23:59:59.000Z

177

Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics  

SciTech Connect

The principal goal in the field of high-Tc ferromagnetic semiconductors is the synthesis, characterization and utilization of semiconductors which exhibit substantial carrier spin polarization at and above room temperature. Such materials are of critical importance in the emerging field of semiconductor spintronics. The interaction leading to carrier spin polarization, exchange coupling between the dopant spins and the valence or conduction band, is known to be sufficiently weak in conventional semiconductors, such as GaAs and Si, that magnetic ordering above cryogenic temperatures is essentially impossible. Since the provocative theoretical predictions of Tc above ambient in p-Mn:ZnO and p-Mn:GaN (T. Dietl et al., Science 287 1019 (2000)), and the observation of room-temperature ferromagnetism in Co:TiO2 anatase (Y. Matsumoto et al., Science 291 854 (2001)), there has been a flurry of work in oxides and nitrides doped with transition metals with unpaired d electrons. It has even been claimed that room-temperature ferromagnetism can be obtained in certain d0 transition metals oxides without a dopant. In this Report, the field of transition metal doped oxides and nitrides is critically reviewed and assessed from a materials science perspective. Since much of the field centers around thin film growth, this Report focuses on films prepared not only by conventional vacuum deposition methods, but also by spin coating colloidal nanoparticles.

Chambers, Scott A.

2006-10-01T23:59:59.000Z

178

Type B plutonium transport package development that uses metallic filaments and composite materials  

Science Conference Proceedings (OSTI)

A new package was developed for transporting Pu and U quantities that are currently carried in DOT-6M packages. It uses double containment with threaded closures and elastomeric seals. A composite overpack of metallic wire mesh and ceramic or quartz cloth insulation is provided for protection in accidents. Two prototypes were subjected to dynamic crush tests. A thermal computer model was developed and benchmarked by test results to predict package behavior in fires. The material performed isotropically in a global fashion. A Type B Pu transport package can be developed for DOE Pu shipments for less than $5000 if manufactured in quantity. 5 figs, 6 refs. (DLC)

Pierce, J.D.; Moya, J.L.; McClure, J.D.; Hohnstreiter, G.F. (Sandia National Labs., Albuquerque, NM (United States)); Golliher, K.G. (USDOE Albuquerque Operations Office, NM (United States))

1991-01-01T23:59:59.000Z

179

Isotopically controlled semiconductors  

SciTech Connect

Semiconductor bulk crystals and multilayer structures with controlled isotopic composition have attracted much scientific and technical interest in the past few years. Isotopic composition affects a large number of physical properties, including phonon energies and lifetimes, bandgaps, the thermal conductivity and expansion coefficient and spin-related effects. Isotope superlattices are ideal media for self-diffusion studies. In combination with neutron transmutation doping, isotope control offers a novel approach to metal-insulator transition studies. Spintronics, quantum computing and nanoparticle science are emerging fields using isotope control.

Haller, Eugene E.

2001-12-21T23:59:59.000Z

180

Isotopically controlled semiconductors  

SciTech Connect

The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

Haller, Eugene E.

2006-06-19T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Fabrication of Metal Foam and its Applications  

Science Conference Proceedings (OSTI)

Mechanical and Physical Properties of Roof Tile Manufacturing from Red Mud ... Structural Engineering of Semiconductor Layered Metal Oxides for Solar...

182

Stretchable semiconductor elements and stretchable electrical circuits  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Menard, Etienne (Durham, NC)

2009-07-07T23:59:59.000Z

183

Layered semiconductor neutron detectors  

SciTech Connect

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

Mao, Samuel S; Perry, Dale L

2013-12-10T23:59:59.000Z

184

Transmissive metallic contact for amorphous silicon solar cells  

DOE Patents (OSTI)

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Madan, A.

1984-11-29T23:59:59.000Z

185

Preparation of a semiconductor thin film  

SciTech Connect

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

186

Pulsed-Laser Deposition of Electronic Oxides: Superconductor and Semiconductor Applications  

Science Conference Proceedings (OSTI)

Over the past decade, pulsed-laser deposition (PLD) has proven to be one of the most versatile and effective methods for obtaining high-quality electronic oxide thin-film materials. Much of this success can be attributed to its initial use in depositing high temperature superconducting materials. However, pulsed-laser deposition is now a leading research tool in the development of various electronic oxide thin-film technologies, In this paper, recent progress in the deposition of oxide materials on dissimilar materials for both superconductor and semiconductor applications is discussed. Recent developments in the synthesis of superconducting wires via epitaxial growth of superconducting oxides on biaxially textured metal tapes is described. In addition, efforts to integrate high-k dielectric oxides on semiconductor surfaces using pulsed-laser deposition are highlighted.

Norton, D.P.; Park, C.; Lee, Y.E.; Budai, J.D.; Chisholm, M.F.; Verebelyi, D.T.; Christen, D.K.; Kroeger, D.M.

2000-01-24T23:59:59.000Z

187

Synthesis of Thermal Interface Materials Made of Metal Decorated Carbon Nanotubes and Polymers  

E-Print Network (OSTI)

This thesis describes the synthesis of a low modulus, thermally conductive thermal interface materials (TIM) using metal decorated nanotubes as fillers. TIMs are very important in electronics because they act as a thermally-conductive medium for thermal transfer between the interface of a heat sink and an electronic package. The performance of an electronic package decreases with increasing operating temperature, hence, there exists a need to create a TIM which has high thermal conduction to reduce the operating temperature. The TIM in this study is made from metal decorated multi-walled carbon nanotubes (MWCNT) and VinnapasBP 600 polymer. The sample was functionalized using mild oxidative treatment with nitric acid (HNO3) or, with N-Methly-2-Pyrrolidone (NMP). The metals used for this experiment were copper (Cu), tin (Sn), and nickel (Ni). The metal nanoparticles were seeded using functionalized MWCNTs as templates. Once seeded, the nanotubes and polymer composites were made with or without sodium dodecylbenzene sulfonate (SDBS), as a surfactant. Thermal conductivity (k) measurement was carried out using ASTM D-5470 method at room temperature. This setup best models the working conditions of a TIM. The TIM samples made for this study showed promise in their ability to have significant increase in thermal conduction while retaining the polymers mechanical properties. The highest k value that was obtained was 0.72 W/m-K for a well dispersed aligned 5 wt percent Ni@MWCNT sample. The Cu samples underperformed both Ni and Sn samples for the same synthesis conditions. This is because Cu nanoparticles were significantly larger than those of Ni and Sn. They were large enough to cause alloy scattering and too large to attach to the nanotubes. Addition of thermally-conductive fillers, such as exfoliated graphite, did not yield better k results as it sunk to the bottom during drying. The use of SDBS greatly increased the k values of the sample by reducing agglomeration. Increasing the amount of metal@MWCNT wt percent in the sample had negative or no effect to the k values. Shear testing on the sample shows it adheres well to the surface when pressure is applied, yet it can be removed with ease.

Okoth, Marion Odul

2010-08-01T23:59:59.000Z

188

Iron-Based Amorphous Metals:The High Performance Corrosion Resistant Materials(HPCRM) Program  

SciTech Connect

An overview of the High-Performance Corrosion-Resistant Materials (HPCRM) Program, which was co-sponsored by the Defense Advanced Research Projects Agency (DARPA) Defense Sciences Office (DSO) and the United States Department of Energy (DOE) Office of Civilian and Radioactive Waste Management (OCRWM), is discussed. Programmatic investigations have included a broad range of topics: alloy design and composition; materials synthesis; thermal stability; corrosion resistance; environmental cracking; mechanical properties; damage tolerance; radiation effects; and important potential applications. Amorphous alloys identified as SAM2X5 (Fe{sub 49.7}Cr{sub 17.7}Mn{sub 1.9}Mo{sub 7.4}W{sub 1.6}B{sub 15.2}C{sub 3.8}Si{sub 2.4}) and SAM1651 (Fe{sub 48}Mo{sub 14}Cr{sub 15}Y{sub 2}C{sub 15}B{sub 6}) have been produced as melt-spun ribbons, drop-cast ingots and thermal-spray coatings. Chromium (Cr), molybdenum (Mo) and tungsten (W) additions provided corrosion resistance, while boron (B) enabled glass formation. Earlier electrochemical studies of melt-spun ribbons and ingots of these amorphous alloys demonstrated outstanding passive film stability. More recently thermal-spray coatings of these amorphous alloys have been made and subjected to long-term salt-fog and immersion tests. Good corrosion resistance has been observed during salt-fog testing. Corrosion rates were measured in situ with linear polarization, while simultaneously monitoring the open-circuit corrosion potentials. Reasonably good performance was observed. The sensitivity of these measurements to electrolyte composition and temperature was determined. The high boron content of this particular amorphous metal makes this amorphous alloy an effective neutron absorber, and suitable for criticality control applications. In general, the corrosion resistance of such iron-based amorphous metals is maintained at operating temperatures up to the glass transition temperature. These materials are much harder than conventional stainless steel and nickel-based materials, and are proving to have excellent wear properties, sufficient to warrant their use in earth excavation, drilling and tunnel boring applications. Large areas have been successfully coated with these materials, with thicknesses of approximately one centimeter. The observed corrosion resistance may enable applications of importance in industries such as: oil and gas production, refining, nuclear power generation, shipping, and others.

Farmer, J

2007-07-09T23:59:59.000Z

189

Iron-Based Amorphous-Metals: High-Performance Corrosion-Resistant Material (HPCRM) Development  

Science Conference Proceedings (OSTI)

An overview of the High-Performance Corrosion-Resistant Materials (HPCRM) Program, which was co-sponsored by the Defense Advanced Research Projects Agency (DARPA) Defense Sciences Office (DSO) and the United States Department of Energy (DOE) Office of Civilian and Radioactive Waste Management (OCRWM), is discussed. Programmatic investigations have included a broad range of topics: alloy design and composition; materials synthesis; thermal stability; corrosion resistance; environmental cracking; mechanical properties; damage tolerance; radiation effects; and important potential applications. Amorphous alloys identified as SAM2X5 (Fe{sub 49.7}Cr{sub 17.7}Mn{sub 1.9}Mo{sub 7.4}W{sub 1.6}B{sub 15.2}C{sub 3.8}Si{sub 2.4}) and SAM1651 (Fe{sub 48}Mo{sub 14}Cr{sub 15}Y{sub 2}C{sub 15}B{sub 6}) have been produced as melt-spun ribbons, drop-cast ingots and thermal-spray coatings. Chromium (Cr), molybdenum (Mo) and tungsten (W) additions provided corrosion resistance, while boron (B) enabled glass formation. Earlier electrochemical studies of melt-spun ribbons and ingots of these amorphous alloys demonstrated outstanding passive film stability. More recently thermal-spray coatings of these amorphous alloys have been made and subjected to long-term salt-fog and immersion tests. Good corrosion resistance has been observed during salt-fog testing. Corrosion rates were measured in situ with linear polarization, while simultaneously monitoring the open-circuit corrosion potentials. Reasonably good performance was observed. The sensitivity of these measurements to electrolyte composition and temperature was determined. The high boron content of this particular amorphous metal makes this amorphous alloy an effective neutron absorber, and suitable for criticality control applications. In general, the corrosion resistance of such iron-based amorphous metals is maintained at operating temperatures up to the glass transition temperature. These materials are much harder than conventional stainless steel and nickel-based materials, and are proving to have excellent wear properties, sufficient to warrant their use in earth excavation, drilling and tunnel boring applications. Large areas have been successfully coated with these materials, with thicknesses of approximately one centimeter. The observed corrosion resistance may enable applications of importance in industries such as: oil and gas production, refining, nuclear power generation, shipping, and others.

Farmer, J C; Choi, J S; Saw, C; Haslam, J; Day, D; Hailey, P; Lian, T; Rebak, R; Perepezko, J; Payer, J; Branagan, D; Beardsley, B; D'Amato, A; Aprigliano, L

2008-01-09T23:59:59.000Z

190

Method for removing semiconductor layers from salt substrates  

DOE Patents (OSTI)

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Shuskus, Alexander J. (West Hartford, CT); Cowher, Melvyn E. (East Brookfield, MA)

1985-08-27T23:59:59.000Z

191

Photovoltaic Cell Materials  

Energy.gov (U.S. Department of Energy (DOE))

Although crystalline silicon cells are the most common type, photovoltaic (PV), or solar cells, can be made of many semiconductor materials. Each material has unique strengths and characteristics...

192

HIGH TEMPERATURE THERMAL AND STRUCTURAL MATERIAL PROPERTIES FOR METALS USED IN LWR VESSELS  

Science Conference Proceedings (OSTI)

Because of the impact that melt relocation and vessel failure may have on subsequent progression and associated consequences of a Light Water Reactor (LWR) accident, it is important to accurately predict heating and relocation of materials within the reactor vessel, heat transfer to and from the reactor vessel, and the potential for failure of the vessel and structures within it. Accurate predictions of such phenomena require high temperature thermal and structural properties. However, a review of vessel and structural steel material properties used in severe accident analysis codes reveals that the required high temperature material properties are extrapolated with little, if any, data above 1000 K. To reduce uncertainties in predictions relying upon extrapolated high temperature data, Idaho National Laboratory (INL) obtained high data for two metals used in LWR vessels: SA 533 Grade B, Class 1 (SA533B1) low alloy steel, which is used to fabricate most US LWR reactor vessels; and Type 304 Stainless Steel SS304, which is used in LWR vessel piping, penetration tubes, and internal structures. This paper summarizes the new data, and compares it to existing data.

J.L. Rempe; D.L. Knudson; J. E. Daw; J. C. Crepeau

2008-06-01T23:59:59.000Z

193

Grain-boundary engineering markedly reduces susceptibility to intergranular hydrogen embrittlement in metallic materials  

DOE Green Energy (OSTI)

The feasibility of using 'grain-boundary engineering' techniques to reduce the susceptibility of a metallic material to intergranular embrittlement in the presence of hydrogen is examined. Using thermomechanical processing, the fraction of 'special' grain boundaries was increased from 46% to 75% (by length) in commercially pure nickel samples. In the presence of hydrogen concentrations between 1200 and 3400 appm, the high special fraction microstructure showed almost double the tensile ductility; also, the proportion of intergranular fracture was significantly lower and the J{sub c} fracture toughness values were some 20-30% higher in comparison with the low special fraction microstructure. We attribute the reduction in the severity of hydrogen-induced intergranular embrittlement to the higher fraction of special grain boundaries, where the degree of hydrogen segregation at these boundaries is reduced.

Bechtle, Sabine; Kumar, Mukul; Somerday, Brian P.; Launey, Maximilien E.; Ritchie, Robert O.

2009-05-10T23:59:59.000Z

194

Physical Behavior of Uranium Metal Bearing Hanford K East Basin Sludge Materials  

DOE Green Energy (OSTI)

Uranium-metal-bearing sludge from the Hanford's K-East (KE) Basin is to be retrieved, loaded into large-diameter containers, and moved to interim storage in a dry cell at T Plant on the Hanford site. Physical behavior of this sludge during loading and subsequent storage in large-diameter containers is of interest to design and safety because oxidation of its uranium generates power and hydrogen gas, with resulting implications for flammability of the container and cell headspaces, potential retention of gas in the settled sludge and subsequent expansion of the sludge material in the large-diameter container, and the potential for local temperature escalation. Key aspects of experimental work and model development necessary to support a robust technical basis for design and safety analyses are reported here: (1) Experimental data supporting the distribution of uranium metal in the large-diameter container, (2) Experimental data defining sludge thermal conductivity and shear strength (or yield stress), and (3) Experimental data and models demonstrating sludge plug movement, breakup, and limited atomization caused by internal gas generation.

DUNCAN, D.R.

2003-05-16T23:59:59.000Z

195

Preliminary Compatibility Assessment of Metallic Dispenser Materials for Service in Ethanol Fuel Blends  

Science Conference Proceedings (OSTI)

The compatibility of selected metals representative of those commonly used in dispensing systems was evaluated in an aggressive E20 formulation (CE20a) and in synthetic gasoline (Reference Fuel C) in identical testing to facilitate comparison of results. The testing was performed at modestly elevated temperature (nominally 60 C) and with constant fluid flow in an effort to accelerate potential interactions in the screening test. Based on weight change, the general corrosion of all individual coupons exposed in the vapor phase above Reference Fuel C and CE20a as well as all coupons immersed in Reference Fuel C was essentially nil (brass and phosphor bronze), but the associated corrosion films were quite thin and apparently protective. For coupons immersed in CE20a, four different materials exhibited net weight loss over the entire course of the experiment: cartridge brass, phosphor bronze, galvanized steel, and terne-plated steel. None of these exhibited substantial incompatibility with the test fluid, with the largest general corrosion rate calculated from coupon weight loss to be approximately 4 {micro}m/y for the cartridge brass specimens. Selective leaching of zinc (from brass) and tin (from bronze) was observed, as well as the presence of sulfide surface films rich in these elements, suggesting the importance of the role of sulfuric acid in the CE20a formulation. Analysis of weight loss data for the slightly corroded metals indicated that the corrosivity of the test environment decreased with exposure time for brass and bronze and increased for galvanized and terne-plated steel. Other materials immersed in CE20a - type 1020 mild steel, type 1100 aluminum, type 201 nickel, and type 304 stainless steel - each appeared essentially immune to corrosion at the test conditions.

Pawel, Steven J [ORNL; Kass, Michael D [ORNL; Janke, Christopher James [ORNL

2009-11-01T23:59:59.000Z

196

Preliminary Compatibility Assessment of Metallic Dispenser Materials for Service in Ethanol Fuel Blends  

SciTech Connect

The compatibility of selected metals representative of those commonly used in dispensing systems was evaluated in an aggressive E20 formulation (CE20a) and in synthetic gasoline (Reference Fuel C) in identical testing to facilitate comparison of results. The testing was performed at modestly elevated temperature (nominally 60 C) and with constant fluid flow in an effort to accelerate potential interactions in the screening test. Based on weight change, the general corrosion of all individual coupons exposed in the vapor phase above Reference Fuel C and CE20a as well as all coupons immersed in Reference Fuel C was essentially nil (<0.3 {micro}m/y), with no evidence of localized corrosion such as pitting/crevice corrosion or selective leaching at any location. Modest discoloration was observed on the copper-based alloys (cartridge brass and phosphor bronze), but the associated corrosion films were quite thin and apparently protective. For coupons immersed in CE20a, four different materials exhibited net weight loss over the entire course of the experiment: cartridge brass, phosphor bronze, galvanized steel, and terne-plated steel. None of these exhibited substantial incompatibility with the test fluid, with the largest general corrosion rate calculated from coupon weight loss to be approximately 4 {micro}m/y for the cartridge brass specimens. Selective leaching of zinc (from brass) and tin (from bronze) was observed, as well as the presence of sulfide surface films rich in these elements, suggesting the importance of the role of sulfuric acid in the CE20a formulation. Analysis of weight loss data for the slightly corroded metals indicated that the corrosivity of the test environment decreased with exposure time for brass and bronze and increased for galvanized and terne-plated steel. Other materials immersed in CE20a - type 1020 mild steel, type 1100 aluminum, type 201 nickel, and type 304 stainless steel - each appeared essentially immune to corrosion at the test conditions.

Pawel, Steven J [ORNL; Kass, Michael D [ORNL; Janke, Christopher James [ORNL

2009-11-01T23:59:59.000Z

197

Incorporation of 4d and 5d Transition Metal Cyanometallates into Magnetic Clusters and Materials.  

E-Print Network (OSTI)

The work presented herein describes efforts to synthesize and characterize new types of cyanide-bridged molecular materials encompassing both discrete clusters and extended solids. This investigation focused on the incorporation of anisotropic 4d and 5d transition metal ion building blocks into such materials. In this vein, systematic studies on the magnetic properties of families of these cyano-bridges species were conducted and these new materials represent a new addition to the field of cyanide chemistry incorporating for the first time the hexacyanometallates of [Ru(CN)6]3- and [Os(CN)6]3- into discrete molecules and extended networks. These compounds will serve as models for new theoretical studies in understanding the role of magnetic exchange interactions, both isotropic and anisotropic, in the study of nanomagnetic materials. Results were obtained from using the well known octacyanometallates of MoV and WV as building blocks for the synthesis and the magnetic investigation of both trigonal bipyramidal and pentadecanuclear clusters including the discovery of a new SMM. By expanding the research to previously unused hexacyanometallates, the synthesis and characterization of the first known examples of clusters based on hexacyanoosmate(III) and hexacyanoruthenate(III) building blocks and their use in preparing new theoretical models of magnetic species. A novel pair of clusters is further detailed in the study of the trigonal bipyramidal clusters of [Fe(tmphen)2]3[Os(CN)6]2 and [Fe(tmphen)2]3[Ru(CN)6]2 and an in depth study of the CTIST behavior of these clusters using Mossbauer spectroscopy, variable temperature crystallography, epr, and variable temperature IR measurements. Finally, this work discusses new magnetic Prussian Blue analogs prepared from the hexacyanoosmate(III) and hexacyanoruthenate(III) anions with a comparison to the trigonal bipyramidal clusters presented based on these hexacyanoosmate(III) and hexacyanoruthenate(III) building blocks.

Hilfiger, Matthew Gary

2010-05-01T23:59:59.000Z

198

Composition-tailored synthesis of gradient transition metal precursor particles for lithium-ion battery cathode materials.  

DOE Green Energy (OSTI)

We report the tailored synthesis of particles with internal gradients in transition metal composition aided by the use of a general process model. Tailored synthesis of transition metal particles was achieved using a coprecipitation reaction with tunable control over the process conditions. Gradients in the internal composition of the particles was monitored and confirmed experimentally by analysis of particles collected during regularly timed intervals. Particles collected from the reactor at the end of the process were used as the precursor material for the solid-state synthesis of Li{sub 1.2}(Mn{sub 0.62}Ni{sub 0.38}){sub 0.8}O{sub 2}, which was electrochemically evaluated as the active cathode material in a lithium battery. The Li{sub 1.2}(Mn{sub 0.62}Ni{sub 0.38}){sub 0.8}O{sub 2} material was the first example of a structurally integrated multiphase material with a tailored internal gradient in relative transition metal composition as the active cathode material in a lithium-ion battery. We believe our general synthesis strategy may be applied to produce a variety of new cathode materials with tunable interior, surface, and overall relative transition metal compositions.

Koenig, G. M.; Belharouak, I.; Deng, H.; Amine, K.; Sun, Y. K. (Chemical Sciences and Engineering Division)

2011-04-12T23:59:59.000Z

199

Materials Science Semiconductor Materials Programs and ...  

Science Conference Proceedings (OSTI)

... transmission of information in today's electronics requires ... sources such as solar energy are attractive alternatives to fossil fuels because ...

2010-05-24T23:59:59.000Z

200

2010 Defects in Semiconductors GRC  

SciTech Connect

Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

Shengbai Zhang

2011-01-06T23:59:59.000Z

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201

Catalyzed Water Oxidation by Solar Irradiation of Band-Gap-Narrowed Semiconductors (Part 2. Overview).  

DOE Green Energy (OSTI)

The objectives of this report are: (1) Investigate the catalysis of water oxidation by cobalt and manganese hydrous oxides immobilized on titania or silica nanoparticles, and dinuclear metal complexes with quinonoid ligands in order to develop a better understanding of the critical water oxidation chemistry, and rationally search for improved catalysts. (2) Optimize the light-harvesting and charge-separation abilities of stable semiconductors including both a focused effort to improve the best existing materials by investigating their structural and electronic properties using a full suite of characterization tools, and a parallel effort to discover and characterize new materials. (3) Combine these elements to examine the function of oxidation catalysts on Band-Gap-Narrowed Semiconductor (BGNSC) surfaces and elucidate the core scientific challenges to the efficient coupling of the materials functions.

Fujita,E.; Khalifah, P.; Lymar, S.; Muckerman, J.T.; Rodriguez, J.

2008-03-18T23:59:59.000Z

202

Catalyzed Water Oxidation by Solar Irradiation of Band-Gap-Narrowed Semiconductors (Part 1. Overview).  

DOE Green Energy (OSTI)

The objectives of this report are: (1) Investigate the catalysis of water oxidation by cobalt and manganese hydrous oxides immobilized on titania or silica nanoparticles, and dinuclear metal complexes with quinonoid ligands in order to develop a better understanding of the critical water oxidation chemistry, and rationally search for improved catalysts. (2) Optimize the light-harvesting and charge-separation abilities of stable semiconductors including both a focused effort to improve the best existing materials by investigating their structural and electronic properties using a full suite of characterization tools, and a parallel effort to discover and characterize new materials. (3) Combine these elements to examine the function of oxidation catalysts on Band-Gap-Narrowed Semiconductor (BGNSC) surfaces and elucidate the core scientific challenges to the efficient coupling of the materials functions.

Fujita,E.; Khalifah, P.; Lymar, S.; Muckerman, J.T.; Rodgriguez, J.

2008-03-18T23:59:59.000Z

203

Optical temperature indicator using thermochromic semiconductors  

DOE Patents (OSTI)

A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

Kronberg, J.W.

1995-01-01T23:59:59.000Z

204

Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure  

DOE Patents (OSTI)

A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A.sub.8TM.sub.y.sub.1.sup.1TM.sub.y.sub.2.sup.2 . . . TM.sub.y.sub.n.sup.nM.sub.zX.sub.46-y.sub.1.sub.-y.sub.2.sub.- . . . -y.sub.n.sub.-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM.sup.1, TM.sup.2, and TM.sup.n are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y.sub.1, y.sub.2, y.sub.n and Z are actual compositions of TM.sup.1, TM.sup.2, TM.sup.n, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8q.sub.A-|.DELTA.q.sub.1|y.sub.1-|.DELTA.q.sub.2|y.sub.2- . . . -|.DELTA.q.sub.n|y.sub.n, wherein q.sub.A is a charge state of A, and wherein .DELTA.q.sub.1, .DELTA.q.sub.2, .DELTA.q.sub.n are, respectively, the nominal charge state of the first, second, and n-th TM.

Yang, Jihui (Lakeshore, CA); Shi, Xun (Troy, MI); Bai, Shengqiang (Shanghai, CN); Zhang, Wenqing (Shanghai, CN); Chen, Lidong (Shanghai, CN); Yang, Jiong (Shanghai, CN)

2012-01-17T23:59:59.000Z

205

Material  

DOE Green Energy (OSTI)

Li(Ni{sub 0.4}Co{sub 0.15}Al{sub 0.05}Mn{sub 0.4})O{sub 2} was investigated to understand the effect of replacement of the cobalt by aluminum on the structural and electrochemical properties. In situ X-ray absorption spectroscopy (XAS) was performed, utilizing a novel in situ electrochemical cell, specifically designed for long-term X-ray experiments. The cell was cycled at a moderate rate through a typical Li-ion battery operating voltage range. (1.0-4.7 V) XAS measurements were performed at different states of charge (SOC) during cycling, at the Ni, Co, and the Mn edges, revealing details about the response of the cathode to Li insertion and extraction processes. The extended X-ray absorption fine structure (EXAFS) region of the spectra revealed the changes of bond distance and coordination number of Ni, Co, and Mn absorbers as a function of the SOC of the material. The oxidation states of the transition metals in the system are Ni{sup 2+}, Co{sup 3+}, and Mn{sup 4+} in the as-made material (fully discharged), while during charging the Ni{sup 2+} is oxidized to Ni{sup 4+} through an intermediate stage of Ni{sup 3+}, Co{sup 3+} is oxidized toward Co{sup 4+}, and Mn was found to be electrochemically inactive and remained as Mn{sup 4+}. The EXAFS results during cycling show that the Ni-O changes the most, followed by Co-O, and Mn-O varies the least. These measurements on this cathode material confirmed that the material retains its symmetry and good structural short-range order leading to the superior cycling reported earlier.

Rumble, C.; Conry, T.E.; Doeff, Marca; Cairns, Elton J.; Penner-Hahn, James E.; Deb, Aniruddha

2010-06-14T23:59:59.000Z

206

Impact of SF{sub 6} plasma treatment on performance of TaN-HfO{sub 2}-InP metal-oxide-semiconductor field-effect transistor  

SciTech Connect

In this work, the experimental impact of SF{sub 6} plasma treatment on the performance of InP metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into atomic layer deposited HfO{sub 2} via postgate SF{sub 6} plasma treatment. The decreased subthreshold swing, gate leakage (I{sub g}), and increased effective channel mobility ({mu}{sub eff}) indicate that better interface and bulk oxide quality have been achieved with SF{sub 6} plasma treatment due to the formation of stronger Hf-F bonds. Drive current (I{sub d}), transconductance (G{sub m}), and effective channel mobility ({mu}{sub eff}) are improved by 22.3%, 35%, and 35%, respectively, compared with those of control devices.

Wang Yanzhen; Chen Yenting; Zhao Han; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758 (United States)

2011-01-24T23:59:59.000Z

207

Method for forming metal contacts  

DOE Patents (OSTI)

Methods of forming metal contacts with metal inks in the manufacture of photovoltaic devices are disclosed. The metal inks are selectively deposited on semiconductor coatings by inkjet and aerosol apparatus. The composite is heated to selective temperatures where the metal inks burn through the coating to form an electrical contact with the semiconductor. Metal layers are then deposited on the electrical contacts by light induced or light assisted plating.

Reddington, Erik; Sutter, Thomas C; Bu, Lujia; Cannon, Alexandra; Habas, Susan E; Curtis, Calvin J; Miedaner, Alexander; Ginley, David S; Van Hest, Marinus Franciscus Antonius Maria

2013-09-17T23:59:59.000Z

208

Metallic phase-change materials for solar dynamic energy storage systems  

DOE Green Energy (OSTI)

Solar (thermal) dynamic power systems for satellites require a heat storage system that is capable of operating the engine during eclipse. The conventional approach to this thermal storage problem is to use the latent heat of fluoride salts, which would melt during insolation and freeze during eclipse. Although candidate fluorides have large heats of fusion per unit mass, their poor thermal conductivity limits the rate at which energy can be transferred to and from the storage device. System performance is further limited by the high parasitic mass of the superalloy canisters needed to contain the salt. This report describes a new thermal storage system in which the phase-change material (PCM) is a metal (typically germanium) contained in modular graphite canisters. These modules exhibit good thermal conductivity and low parasitic mass, and they are physically and chemically stable. Prototype modules have survived over 600 melt/freeze cycles without degradation. Advanced concepts to further improve performance are described. These concepts include the selection of ternary eutectic alloys to provide a wider range of useful melting temperatures and the use of infiltration to control the location of liquid alloy and to compensate for differences in thermal expansion. 13 refs., 18 figs.

Lauf, R.J.; Hamby, C. Jr.

1990-12-01T23:59:59.000Z

209

Semiconductor bridge (SCB) igniter  

DOE Patents (OSTI)

In an explosive device comprising an explosive material which can be made to explode upon activation by activation means in contact therewith; electrical activation means adaptable for activating said explosive material such that it explodes; and electrical circuitry in operation association with said activation means; there is an improvement wherein said activation means is an electrical material which, at an elevated temperature, has a negative temperature coefficient of electrical resistivity and which has a shape and size and an area of contact with said explosive material sufficient that it has an electrical resistance which will match the resistance requirements of said associated electrical circuitry when said electrical material is operationally associated with said circuitry, and wherein said electrical material is polycrystalline; or said electrical material is crystalline and (a) is mounted on a lattice matched substrate or (b) is partially covered with an intimately contacting metallization area which defines its area of contact with said explosive material.

Bickes, Jr., Robert W. (Albuquerque, NM); Schwarz, Alfred C. (Albuquerque, NM)

1987-01-01T23:59:59.000Z

210

Materials Go/No-Go Decisions Made Within the Department of Energy Metal Hydride Center of Excellence  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Go/No-Go Decisions Made Within Materials Go/No-Go Decisions Made Within the Department of Energy Metal Hydride Center of Excellence (MHCoE) In fulfillment of the end of Fiscal Year 2007 Project Milestone on Materials Down-selection Lennie Klebanoff, Director Sandia National Laboratories Livermore, CA 94551 September/October 2007 1 Acknowledgements The author wishes to acknowledge the contributions of all Principal Investigators within the Metal Hydride Center of Excellence (MHCoE) to the work summarized herein. Their names and affiliations are listed below. Especially significant contributions to this document were made by Dr. Ewa Ronnebro (SNL), Dr. John Vajo (HRL), Prof. Zak Fang (U. Utah), Dr. Robert Bowman Jr. (JPL), Prof. David Sholl (CMU) and Prof. Craig Jensen (U. Hawaii). The author thanks Dr.

211

Efficient Heat Storage Materials: Metallic Composites Phase-Change Materials for High-Temperature Thermal Energy Storage  

SciTech Connect

HEATS Project: MIT is developing efficient heat storage materials for use in solar and nuclear power plants. Heat storage materials are critical to the energy storage process. In solar thermal storage systems, heat can be stored in these materials during the day and released at nightwhen the suns not outto drive a turbine and produce electricity. In nuclear storage systems, heat can be stored in these materials at night and released to produce electricity during daytime peak-demand hours. MIT is designing nanostructured heat storage materials that can store a large amount of heat per unit mass and volume. To do this, MIT is using phase change materials, which absorb a large amount of latent heat to melt from solid to liquid. MITs heat storage materials are designed to melt at high temperatures and conduct heat wellthis makes them efficient at storing and releasing heat and enhances the overall efficiency of the thermal storage and energy-generation process. MITs low-cost heat storage materials also have a long life cycle, which further enhances their efficiency.

None

2011-11-21T23:59:59.000Z

212

Novel air electrode for metal-air battery with new carbon material and method of making same  

DOE Patents (OSTI)

A novel carbonaceous electrode support material is disclosed characterized by a corrosion rate of 0.03 wt. %/hour or less when measured a5 550 millivolts vs. a Hg/HgO electrode in a 30 wt. % KOH electrolyte a5 30.degree. C. The electrode support material comprises a preselected carbon black material which has been heat-treated by heating the material to a temperature of from about 2500.degree. to about 3000.degree. C. over a period of from about 1 to about 5 hours in an inert atmosphere and then maintaining the preselected carbon black material at this temperature for a period of at least about 1 hour, and preferably about 2 hours, in the inert atmosphere. A carbonaceous electrode suitable for use as an air electrode in a metal-air cell may be made from the electrode support material by shaping and forming it into a catalyst support and then impregnating it with a catalytically active material capable of catalyzing the reaction with oxygen at the air electrode of metal-air cell.

Ross, Jr., Philip N. (Kensington, CA)

1990-01-01T23:59:59.000Z

213

Optical temperature sensor using thermochromic semiconductors  

DOE Patents (OSTI)

Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

Kronberg, J.W.

1994-01-01T23:59:59.000Z

214

EPRI P87, A New Filler Material for Dissimilar Metal Welds  

Science Conference Proceedings (OSTI)

Development of Screening Test for Hydrogen Assisted Cracking in Dissimilar Metal Welds Direct Colloidal Joining and Co-firing for Anode-Supported SOFCs.

215

Laser Shock Processing of Metallic Materials: Coupling of Laser-Plasma Interaction and Material Behaviour Models for the Assessment of Key Process Issues  

SciTech Connect

Profiting by the increasing availability of laser sources delivering intensities above 109 W/cm{sup 2} with pulse energies in the range of several Joules and pulse widths in the range of nanoseconds, laser shock processing (LSP) is consolidating as an effective technology for the improvement of surface mechanical and corrosion resistance properties of metals. The main advantage of the laser shock processing technique consists on its capability of inducing a relatively deep compression residual stresses field into metallic alloy pieces allowing an improved mechanical behaviour, explicitly, the life improvement of the treated specimens against wear, crack growth and stress corrosion cracking. Although significant work from the experimental side has been contributed to explore the optimum conditions of application of the treatments and to assess their ultimate capability to provide enhanced mechanical behaviour to work-pieces of typical materials, only limited attempts have been developed in the way of full comprehension and predictive assessment of the characteristic physical processes and material transformations with a specific consideration of real material properties. In the present paper, a review on the physical issues dominating the development of LSP processes from a high intensity laser-matter interaction point of view is presented along with the theoretical and computational methods developed by the authors for their predictive assessment and practical results at laboratory scale on the application of the technique to different materials.

Ocana, J. L.; Morales, M.; Molpeceres, C.; Porro, J. A. [Centro Laser UPM. Universidad Politecnica de Madrid, Campus Sur UPM. Edificio La Arboleda. Ctra. de Valencia, km. 7.3. 28031 Madrid (Spain)

2010-10-08T23:59:59.000Z

216

Coherent electron transport through freestanding graphene junctions with metal contacts: a materials approach  

Science Conference Proceedings (OSTI)

In this article we highlight recent work in which we computed the spin unpolarized coherent electron transport through two terminal nanoscale graphene/metal junctions using equilibrium Green's functions coupled to Density functional theory, capturing ... Keywords: First-principles quantum transport, Graphene/metal junctions, Tight-binding method

Salvador Barraza-Lopez

2013-06-01T23:59:59.000Z

217

Metals  

Science Conference Proceedings (OSTI)

Mar 13, 2012 ... Strong market demand for secondary materials has restricted material ... by chemical analysis using atomic absorption spectrophotometry in order to ... used for many applications such as secondary battery, cemented carbide,...

218

Synthesis of thin films and materials utilizing a gaseous catalyst  

Science Conference Proceedings (OSTI)

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

219

Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open Energy  

Open Energy Info (EERE)

Semiconductor formerly Bandwidth Semiconductor LLC Semiconductor formerly Bandwidth Semiconductor LLC Jump to: navigation, search Name Spire Semiconductor (formerly Bandwidth Semiconductor LLC) Place Hudson, New Hampshire Zip 3051 Product Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References Spire Semiconductor (formerly Bandwidth Semiconductor LLC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Spire Semiconductor (formerly Bandwidth Semiconductor LLC) is a company located in Hudson, New Hampshire . References ↑ "Spire Semiconductor (formerly Bandwidth Semiconductor LLC)" Retrieved from "http://en.openei.org/w/index.php?title=Spire_Semiconductor_formerly_Bandwidth_Semiconductor_LLC&oldid=351621"

220

Unitary lens semiconductor device  

DOE Patents (OSTI)

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Lear, Kevin L. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Semiconductor radiation detector  

DOE Patents (OSTI)

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Bell, Zane W. (Oak Ridge, TN); Burger, Arnold (Knoxville, TN)

2010-03-30T23:59:59.000Z

222

Materials Reliability Program: Welding Residual Stress Dissimilar Metal Butt-Weld Finite Element Modeling Handbook (MRP-317)  

Science Conference Proceedings (OSTI)

The residual stresses imparted by the welding process are a principal factor in the process of primary water stress corrosion cracking (PWSCC) of Alloy 82/182 nickel-alloy (i.e., dissimilar metal) piping butt welds in pressurized water reactors (PWRs). Numerical methods by finite element analyses are frequently used to simulate the welding process in order to predict the residual stress distribution in the weld and base material as an input to crack growth calculations. The crack growth calculations, in ...

2011-12-22T23:59:59.000Z

223

Materials Reliability Program: Validation of Welding Residual Stress Models for PWR Piping Dissimilar Metal Welds (MRP-271)  

Science Conference Proceedings (OSTI)

The residual stresses imparted by the welding process are a principal factor in primary water stress corrosion cracking (PWSCC) of Dissimilar Metal (DM) piping butt welds in PWRs. Analytical models are frequently used to simulate the welding process in order to predict the residual stress distribution in the weld and base material as an input to crack growth calculations. The crack growth calculations have demonstrated a high sensitivity to the welding residual stress distribution inputs. As part of the ...

2009-12-22T23:59:59.000Z

224

Preparation of III-V semiconductor nanocrystals  

DOE Patents (OSTI)

Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

Alivisatos, A. Paul (Berkeley, CA); Olshavsky, Michael A. (Brunswick, OH)

1996-01-01T23:59:59.000Z

225

Tetratopic phenyl compounds, related metal-organic framework materials and post-assembly elaboration  

DOE Patents (OSTI)

Disclosed are tetratopic carboxylic acid phenyl for use in metal-organic framework compounds. These compounds are useful in catalysis, gas storage, sensing, biological imaging, drug delivery and gas adsorption separation.

Farha, Omar K; Hupp, Joseph T

2013-06-25T23:59:59.000Z

226

Tetratopic phenyl compounds, related metal-organic framework materials and post-assembly elaboration  

DOE Patents (OSTI)

Disclosed are tetratopic carboxylic acid phenyl for use in metal-organic framework compounds. These compounds are useful in catalysis, gas storage, sensing, biological imaging, drug delivery and gas adsorption separation.

Farha, Omar K.; Hupp, Joseph T.

2012-09-11T23:59:59.000Z

227

Light Metals  

Science Conference Proceedings (OSTI)

Alternative processes; Anode design and operation; Cell fundamentals and ... Hot-rolling technologies; Deformation of materials; Primary metal production.

228

High Throughput Combinatorial Screening of Biometic Metal-Organic Materials for Military Hydrogen-Storage Materials (New Joint Miami U/NREL DoD/DLA Project) (presentation)  

NLE Websites -- All DOE Office Websites (Extended Search)

Miami University/NREL DoD/DLA Project Miami University/NREL DoD/DLA Project High throughput combinatorial screening of biomimetic metal-organic materials for military hydrogen-storage applications Philip Parilla - NREL Joe Zhou, Dan Zhao - Miami U, Ohio Jeff Blackburn, Kevin O'Neill, Lin Simpson, Mike Heben - NREL Outline * Miami/NREL Project - Synthesis (Miami) - High Throughput Characterization (NREL) - Other Characterization * Other High Throughput Activities (NREL) - Parallel Sieverts - Parallel Gravimetric * Final Comments Overview of Miami/NREL Project * Goals - Development of H 2 storage materials based on MOFs, targeting 15 kJ/mole binding energy and high density of H 2 sites - Development of optical-based detection of adsorbed H 2 allowing rapid screening of samples * Approach - Combinatorial MOFs synthesis involving 8

229

Advances in materials science, Metals and Ceramics Division. Triannual progress report, October 1979-January 1980  

DOE Green Energy (OSTI)

Progress is summarized concerning magnetic fusion energy materials, laser fusion energy, aluminium-air battery and vehicle, geothermal research, oil-shale research, nuclear waste management, office of basic energy sciences research, and materials research notes. (FS)

Not Available

1980-03-31T23:59:59.000Z

230

About the 1996 Electronic Materials Conference  

Science Conference Proceedings (OSTI)

Session N: Non-Stoichiometric Compound Semi-Conductors Session O: Quantum Effect Materials: Spontaneous Ordering Composition Modulation in...

231

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

2009-11-24T23:59:59.000Z

232

Guiding effect of quantum wells in semiconductor lasers  

Science Conference Proceedings (OSTI)

The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N

2013-05-31T23:59:59.000Z

233

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2013-05-14T23:59:59.000Z

234

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

2011-07-19T23:59:59.000Z

235

Electron gas grid semiconductor radiation detectors  

DOE Patents (OSTI)

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

2002-01-01T23:59:59.000Z

236

Metal Aminoboranes  

NLE Websites -- All DOE Office Websites (Extended Search)

Metal Aminoboranes Metal Aminoboranes Metal Aminoboranes Metal aminoboranes of the formula M(NH.sub.2BH.sub.3).sub.n have been synthesized. June 25, 2013 Metal Aminoboranes Metal aminoboranes of the formula M(NH.sub.2BH.sub.3).sub.n have been synthesized. Available for thumbnail of Feynman Center (505) 665-9090 Email Metal Aminoboranes Metal aminoboranes of the formula M(NH.sub.2BH.sub.3).sub.n have been synthesized. Metal aminoboranes are hydrogen storage materials. Metal aminoboranes are also precursors for synthesizing other metal aminoboranes. Metal aminoboranes can be dehydrogenated to form hydrogen and a reaction product. The reaction product can react with hydrogen to form a hydrogen storage material. Metal aminoboranes can be included in a kit. U.S. Patent No.: 7,713,506 (DOE S-112,798)

237

Layered Rare Earth and Transition Metal Materials: Synthesis, Modification and Catalytic Application.  

E-Print Network (OSTI)

?? This research contains three parts; the first two parts of this thesis demonstrate the synthesis of rare earth layered materials and their application in (more)

Zhang, Yashan

2013-01-01T23:59:59.000Z

238

Uranium Oxide Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

of semiconductors, it would consume the annual production rate of depleted uranium from uranium enrichment facilities. For more information: PDF Semiconductive Properties of...

239

Investigation of metal fluoride thermal energy storage materials: availability, cost, and chemistry. Final report, July 15, 1976--December 15, 1976  

DOE Green Energy (OSTI)

Storage of thermal energy in the 400 to 1000/sup 0/C range is attracting increasing consideration for use in solar power, central power, vehicular, and commercial process systems. This study investigates the practicality of using metal fluorides as the heat storage medium. The projected availability of metal fluorides has been studied and is shown to be adequate for widespread thermal storage use. Costs are projected and discussed in relation to thermal energy storage applications. Phase diagrams, heats of fusion, heat capacities, vapor pressures, toxicity, stability, volume changes, thermal conductivities, fusion kinetics, corrosion, and container materials of construction for a wide range of fluorides have been examined. Analyses of these data in consideration of thermal energy storage requirements have resulted in selection of the most cost-effective fluoride mixture for each of 23 temperature increments between 400 and 1000/sup 0/C. Thermo-physical properties of these 23 materials are presented. Comparison of fluoride with non-fluoride materials shows that the fluorides are suitable candidates for high temperature applications on the bases of cost, heat capacity/unit volume, heat capacity/unit weight, corrosive properties, and availability.

Eichelberger, J.L.

1976-12-01T23:59:59.000Z

240

PHYSICAL METALLURGY OF FAST BREEDER REACTOR CLADDING MATERIALS AND REFRACTORY METALS.  

SciTech Connect

Studies on Re - Mo - W alloys led to lower cost production procedures and greatly improved room temperature ductility properties of powder metallurgy materials used for fast breeder reactor fuel cladding materials. Data are presented for ductility, grain size, hardness, recrystallization, and changes in aging at temperatures up to 2000 deg C for periods up to 1000 hrs. (F.S.)

Collins, C.G.; Bohlander, K.M.

1969-10-31T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Deactivation Mechanisms of Base Metal/Zeolite Urea Selective Catalytic Reduction Materials, and Development of Zeolite-Based Hydrocarbon Adsorber Materials  

Science Conference Proceedings (OSTI)

This annual report describes recent progress on a collaborative project between scientists and engineers in the Institute for Integrated Catalysis at PNNL and at Ford Motor Company, involving investigations of laboratory- and engine-aged SCR catalysts, containing mainly base metal zeolites. These studies are leading to a better understanding of various aging factors that impact the long-term performance of SCR catalysts and improve the correlation between laboratory and engine aging, saving experimental time and cost. We are investigating SCR catalysts with reduced ammonia slip, increased low temperature activity, and increased product selectivity to N2. More recent recognition that high temperature performance, under regimes that sometimes cause deactivation, also needs to be improved is driving current work focused on catalyst materials modifications needed to achieve this enhanced performance. We are also studying materials effective for the temporary storage of HC species during the cold-start period. In particular, we examine the adsorption and desorption of various HC species produced during the combustion with different fuels (e.g., gasoline, E85, diesel) over potential HC adsorber materials, and measure the kinetic parameters to update Fords HC adsorption model.

Kwak, Ja Hun; Lee, Jong H.; Kim, Do Heui; Li, Xiaohong S.; Tran, Diana N.; Peden, Charles HF

2011-12-22T23:59:59.000Z

242

Method for separating metal chelates from other materials based on solubilities in supercritical fluids  

DOE Patents (OSTI)

A method for separating a desired metal or metalloi from impurities using a supercritical extraction process based on solubility differences between the components, as well as the ability to vary the solvent power of the supercritical fluid, is described. The use of adduct-forming agents, such as phosphorous-containing ligands, to separate metal or metalloid chelates in such processes is further disclosed. In preferred embodiments, the extraction solvent is supercritical carbon dioxide and the chelating agent is selected from the group consisting of .beta.-diketones; phosphine oxides, such as trialkylphosphine oxides, triarylphosphine oxides and alkylarylphosphine oxides; phosphinic acids; carboxylic acids; phosphates, such as trialkylphosphates, triarylphosphates and alkylarylphosphates; crown ethers; dithiocarbamates; phosphine sulfides; phosphorothioic acids; thiophosphinic acids; halogenated analogs of these chelating agents; and mixtures of these chelating agents. In especially preferred embodiments, at least one of the chelating agents is fluorinated.

Wai, Chien M. (Moscow, ID); Smart, Neil G. (Workington, GB); Phelps, Cindy (Moscow, ID)

2001-01-01T23:59:59.000Z

243

Removal of radioactive materials and heavy metals from water using magnetic resin  

DOE Patents (OSTI)

Magnetic polymer resins capable of efficient removal of actinides and heavy metals from contaminated water are disclosed together with methods for making, using, and regenerating them. The resins comprise polyamine-epichlorohydrin resin beads with ferrites attached to the surfaces of the beads. Markedly improved water decontamination is demonstrated using these magnetic polymer resins of the invention in the presence of a magnetic field, as compared with water decontamination methods employing ordinary ion exchange resins or ferrites taken separately.

Kochen, Robert L. (Boulder, CO); Navratil, James D. (Simi Valley, CA)

1997-01-21T23:59:59.000Z

244

Theory of Semiconductor Laser Cooling .  

E-Print Network (OSTI)

??Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order (more)

Rupper, Greg

2010-01-01T23:59:59.000Z

245

Advances in materials science, metals and ceramics division. Triannual progress report, June-September 1980  

Science Conference Proceedings (OSTI)

Information is presented concerning the magnetic fusion energy program; the laser fusion energy program; geothermal research; nuclear waste management; Office of Basic Energy Sciences (OBES) research; diffusion in silicate minerals; chemistry research resources; and chemistry and materials science research.

Truhan, J.J.; Hopper, R.W.; Gordon, K.M. (eds.)

1980-10-28T23:59:59.000Z

246

Advances in materials science, Metals and Ceramics Division. Quarterly progress report, July-September 1979  

DOE Green Energy (OSTI)

Research is reported on materials for magnetic fusion energy, laser fusion energy, Al-air batteries, geothermal energy, oil shale, nuclear waste management, thermochemical cycles for hydrogen production, chemistry, and basic energy science. (FS)

Truhan, J.J.; Weld, F.N.

1979-10-25T23:59:59.000Z

247

Advances in materials science, Metals and Ceramics Division. Triannual progress report, February-May 1980  

SciTech Connect

Research is reported in the magnetic fusion energy and laser fusion energy programs, aluminium-air battery and vehicle research, geothermal research, nuclear waste management, basic energy science, and chemistry and materials science. (FS)

Truhan, J.J.; Gordon, K.M. (eds.)

1980-08-01T23:59:59.000Z

248

Wide-Bandgap Semiconductors  

SciTech Connect

With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters. With the advent of the use of SiC devices it is imperative that models of these be made available in commercial simulators. This enables power electronic designers to simulate their designs for various test conditions prior to fabrication. To build an accurate transistor-level model of a power electronic system such as an inverter, the first step is to characterize the semiconductor devices that are present in the system. Suitable test beds need to be built for each device to precisely test the devices and obtain relevant data that can be used for modeling. This includes careful characterization of the parasitic elements so as to emulate the test setup as closely as possible in simulations. This report is arranged as follows: Chapter 2--The testing and characterization of several diodes and power switches is presented. Chapter 3--A 55-kW hybrid inverter (Si insulated gate bipolar transistor--SiC Schottky diodes) device models and test results are presented. A detailed description of the various test setups followed by the parameter extraction, modeling, and simulation study of the inverter performance is presented. Chapter 4--A 7.5-kW all-SiC inverter (SiC junction field effect transistors (JFET)--SiC Schottky diodes) was built and tested. The models built in Saber were validated using the test data and the models were used in system applications in the Saber simulator. The simulation results and a comparison of the data from the prototype tests are discussed in this chapter. Chapter 5--The duration test results of devices utilized in buck converters undergoing reliability testing are presented.

Chinthavali, M.S.

2005-11-22T23:59:59.000Z

249

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

2008-01-01T23:59:59.000Z

250

Final Report Theoretical Studies of Surface Reactions on Metals and Electronic Materials  

DOE Green Energy (OSTI)

This proposal describes the proposed renewal of a theoretical research program on the structure and reactivity of molecules adsorbed on transition metal surfaces. A new direction of the work extends investigations to interfaces between solid surfaces, adsorbates and aqueous solutions and includes fundamental work on photoinduced electron transport into chemisorbed species and into solution. The goal is to discover practical ways to reduce water to hydrogen and oxygen using radiation comparable to that available in the solar spectrum. The work relates to two broad subject areas: photocatalytic processes and production of hydrogen from water. The objective is to obtain high quality solutions of the electronic structure of adsorbate-metal-surface-solution systems so as to allow activation barriers to be calculated and reaction mechanisms to be determined. An ab initio embedding formalism provides a route to the required accuracy. New theoretical methods developed during the previous grant period will be implemented in order to solve the large systems involved in this work. Included is the formulation of a correlation operator that is used to treat localized electron distributions such as ionic or regionally localized distributions. The correlation operator which is expressed as a two-particle projector is used in conjunction with configuration interaction.

Jerry L. Whitten

2012-04-23T23:59:59.000Z

251

Deactivation Mechanisms of Base Metal/Zeolite Urea Selective Catalytic Reduction Materials, and Development of Zeolite-Based Hydrocarbon Adsorber Materials  

SciTech Connect

In this collaborative program, scientists and engineers in the Institute for Integrated Catalysis at Pacific Northwest National Laboratory and at Ford Motor Company have investigated laboratory- and engine-aged SCR catalysts, containing mainly base metal zeolites. These studies are leading to a better understanding of various aging factors that impact the long-term performance of SCR catalysts and improve the correlation between laboratory and engine aging, saving experimental time and cost. We have also studied materials effective for the temporary storage of HC species during the cold-start period. In particular, we have examined the adsorption and desorption of various HC species produced during the combustion with different fuels (e.g., gasoline, E85, diesel) over potential HC adsorber materials, and measured the kinetic parameters to update Fords HC adsorption model. Since this CRADA has now been completed, in this annual report we will provide very brief summaries of most of the work carried out on this CRADA over the last several years.

Gao, Feng; Kwak, Ja Hun; Lee, Jong H.; Tran, Diana N.; Peden, Charles HF; Howden, Ken; Cheng, Yisun; Lupescu, Jason; Cavattaio, Giovanni; Lambert, Christine; McCabe, Robert W.

2012-12-31T23:59:59.000Z

252

Conductive layer for biaxially oriented semiconductor film growth  

DOE Patents (OSTI)

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

Findikoglu, Alp T. (Los Alamos, NM); Matias, Vladimir (Santa Fe, NM)

2007-10-30T23:59:59.000Z

253

Reduction in interface state density of Al{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation  

Science Conference Proceedings (OSTI)

We report the decrease in interface trap density (D{sub it}) in Al{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors by using electron cyclotron resonance plasma nitridation of the InGaAs surfaces. The impact of the nitridation process on the MOS interface properties is quantitatively examined. The plasma nitridation process is observed to form a nitrided layer at the InGaAs surface. The nitridation using microwave power (P{sub microwave}) of 250 W and nitridation time (t{sub nitridation}) of 420 s can form Al{sub 2}O{sub 3}/InGaAs MOS interfaces with a minimum D{sub it} value of 2.0 Multiplication-Sign 10{sup 11} cm{sup -2} eV{sup -1}. On the other hand, the nitridation process parameters such as P{sub microwave} and t{sub nitridation} are found to strongly alter D{sub it} (both decrease and increase are observed) and capacitance equivalent thickness (CET). It is found that the nitridation with higher P{sub microwave} and shorter t{sub nitridation} can reduce D{sub it} with less CET increase. Also, it is observed that as t{sub nitridation} increases, D{sub it} decreases first and increases later. It is revealed from XPS analyses that minimum D{sub it} can be determined by the balance between the saturation of nitridation and the progress of oxidation. As a result, it is found that the superior MOS interface formed by the nitridation is attributable to the existence of oxide-less InGaN/InGaAs interfaces.

Hoshii, Takuya; Lee, Sunghoon; Suzuki, Rena; Taoka, Noriyuki; Yokoyama, Masafumi; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Yamada, Hishashi; Hata, Masahiko [Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan); Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

2012-10-01T23:59:59.000Z

254

2 www.trnmag.com Technology Research News February 23/March 2, 2005 Process yields semiconductor foam  

E-Print Network (OSTI)

Wayne State University have made crystalline aerogels -- new semiconductor materials that are very porous, giving them very high surface areas. Unlike conventional aerogels, the researchers' materials

Ruina, Andy L.

255

Analysis of lateritic material from Cerro Impacto by instrumental neutron activation employing a low-energy photon semiconductor and a high-energy Ge(Li) detector  

Science Conference Proceedings (OSTI)

Nineteen elements were determined in four different grain size fractions of a bulk geological material from Cerro Impacto for a study of the physical (mechanical) concentration process of different elements based upon the hardness of the different minerals. The analysis was performed by excitation of the sample with a high, slow neutron flux followed by gamma-ray spectroscopy with both a conventional Ge(Li) high-energy detector and a low-energy photon detector (LEPD). The accuracy of this method was studied with the use of two standard reference materials, SY-2 and SY-3, which are similar to the real samples. The values determined were also compared with a secondary target x-ray fluorescence method for all the elements that were suitable to both methods. Actually, the x-ray fluorescence method was found to be more complementary than competitive. 10 refs., 2 figs., 4 tabs.

LaBrecque, J.J.; Beusen, J.M.; Van Grieken, R.E.

1986-01-01T23:59:59.000Z

256

High-Throughput Transfer Imprinting for Organic Semiconductors  

E-Print Network (OSTI)

Development of nanoimprint lithography(NIL) has enabled high-throughput and high-resolution patterning over the optical limitation. In recent years, thermal nanoimprint has been used to directly pattern functional materials such as organic semiconductors because heat and pressure used in thermal nanoimprint do not damage functional materials. However, issues such as residual layer removal and mold contamination still limit the application of nanoimprint for organic semiconductor patterning. In this work, nanoimprint-based transfer imprinting of organic semiconductor is studied. In the same time the suggested technique is simulated with COMSOL multi-physics simulator to understand its mechanism. This transfer printing technique utilize thermal nanoimprint scheme to enable residual-layer-free patterning of organic semiconductors without mold contamination. The transfer imprinting technique is amenable to roll-to-roll process for high-throughput patterning of organic semiconductors for low-cost organic electronic applications.

Choo, Gihoon

2013-08-01T23:59:59.000Z

257

Compatibility Study for Plastic, Elastomeric, and Metallic Fueling Infrastructure Materials Exposed to Aggressive Formulations of Ethanol-blended Gasoline  

SciTech Connect

In 2008 Oak Ridge National Laboratory began a series of experiments to evaluate the compatibility of fueling infrastructure materials with intermediate levels of ethanol-blended gasoline. Initially, the focus was elastomers, metals, and sealants, and the test fuels were Fuel C, CE10a, CE17a and CE25a. The results of these studies were published in 2010. Follow-on studies were performed with an emphasis on plastic (thermoplastic and thermoset) materials used in underground storage and dispenser systems. These materials were exposed to test fuels of Fuel C and CE25a. Upon completion of this effort, it was felt that additional compatibility data with higher ethanol blends was needed and another round of experimentation was performed on elastomers, metals, and plastics with CE50a and CE85a test fuels. Compatibility of polymers typically relates to the solubility of the solid polymer with a solvent. It can also mean susceptibility to chemical attack, but the polymers and test fuels evaluated in this study are not considered to be chemically reactive with each other. Solubility in polymers is typically assessed by measuring the volume swell of the polymer exposed to the solvent of interest. Elastomers are a class of polymers that are predominantly used as seals, and most o-ring and seal manufacturers provide compatibility tables of their products with various solvents including ethanol, toluene, and isooctane, which are components of aggressive oxygenated gasoline as described by the Society of Automotive Engineers (SAE) J1681. These tables include a ranking based on the level of volume swell in the elastomer associated with exposure to a particular solvent. Swell is usually accompanied by a decrease in hardness (softening) that also affects performance. For seal applications, shrinkage of the elastomer upon drying is also a critical parameter since a contraction of volume can conceivably enable leakage to occur. Shrinkage is also indicative of the removal of one or more components of the elastomers (by the solvent). This extraction of additives can negatively change the properties of the elastomer, leading to reduced performance and durability. For a seal application, some level of volume swell is acceptable, since the expansion will serve to maintain a seal. However, the acceptable level of swell is dependent on the particular application of the elastomer product. It is known that excessive swell can lead to unacceptable extrusion of the elastomer beyond the sealed interface, where it becomes susceptible to damage. Also, since high swell is indicative of high solubility, there is a heightened potential for fluid to seep through the seal and into the environment. Plastics, on the other hand, are used primarily in structural applications, such as solid components, including piping and fluid containment. Volume change, especially in a rigid system, will create internal stresses that may negatively affect performance. In order to better understand and predict the compatibility for a given polymer type and fuel composition, an analysis based on Hansen solubility theory was performed for each plastic and elastomer material. From this study, the solubility distance was calculated for each polymer material and test fuel combination. Using the calculated solubility distance, the ethanol concentration associated with peak swell and overall extent of swell can be predicted for each polymer. The bulk of the material discussion centers on the plastic materials, and their compatibility with Fuel C, CE25a, CE50a, and CE85a. The next section of this paper focuses on the elastomer compatibility with the higher ethanol concentrations with comparison to results obtained previously for the lower ethanol levels. The elastomers were identical to those used in the earlier study. Hansen solubility theory is also applied to the elastomers to provide added interpretation of the results. The final section summarizes the performance of the metal coupons.

Kass, Michael D [ORNL; Pawel, Steven J [ORNL; Theiss, Timothy J [ORNL; Janke, Christopher James [ORNL

2012-07-01T23:59:59.000Z

258

Semiconductor diode with external field modulation  

DOE Patents (OSTI)

A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.

Nasby, Robert D. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

259

Iron-Based Amorphous-Metals: High-Performance Corrosion-Resistant Materials (HPCRM) Development Final Report  

Science Conference Proceedings (OSTI)

An overview of the High-Performance Corrosion-Resistant Materials (HPCRM) Program, which was co-sponsored by the Defense Advanced Research Projects Agency (DARPA) Defense Sciences Office (DSO) and the United States Department of Energy (DOE) Office of Civilian and Radioactive Waste Management (OCRWM), is discussed. Programmatic investigations have included a broad range of topics: alloy design and composition; materials synthesis; thermal stability; corrosion resistance; environmental cracking; mechanical properties; damage tolerance; radiation effects; and important potential applications. Amorphous alloys identified as SAM2X5 (Fe{sub 49.7}Cr{sub 17.7}Mn{sub 1.9}Mo{sub 7.4}W{sub 1.6}B{sub 15.2}C{sub 3.8}Si{sub 2.4}) and SAM1651 (Fe{sub 48}Mo{sub 14}Cr{sub 15}Y{sub 2}C{sub 15}B{sub 6}) have been produced as melt-spun ribbons, drop-cast ingots and thermal-spray coatings. Chromium (Cr), molybdenum (Mo) and tungsten (W) additions provided corrosion resistance, while boron (B) enabled glass formation. Earlier electrochemical studies of melt-spun ribbons and ingots of these amorphous alloys demonstrated outstanding passive film stability. More recently thermal-spray coatings of these amorphous alloys have been made and subjected to long-term salt-fog and immersion tests. Good corrosion resistance has been observed during salt-fog testing. Corrosion rates were measured in situ with linear polarization, while simultaneously monitoring the open-circuit corrosion potentials. Reasonably good performance was observed. The sensitivity of these measurements to electrolyte composition and temperature was determined. The high boron content of this particular amorphous metal make this amorphous alloy an effective neutron absorber, and suitable for criticality control applications. In general, the corrosion resistance of these iron-based amorphous metals is maintained at operating temperatures up to the glass transition temperature. These materials are much harder than conventional stainless steel and nickel-based materials, and are proving to have excellent wear properties, sufficient to warrant their use in earth excavation, drilling and tunnel boring applications. The observed corrosion resistance may enable applications of importance in industries such as: oil and gas production, refining, nuclear power generation, shipping, and others. Large areas have been successfully coated with these materials, with thicknesses of approximately one centimeter.

Farmer, J C; Choi, J; Saw, C; Haslem, J; Day, D; Hailey, P; Lian, T; Rebak, R; Perepezko, J; Payer, J; Branagan, D; Beardsley, B; D'Amato, A; Aprigliano, L

2009-03-16T23:59:59.000Z

260

Final Technical Report on DE-SC00002460 [Bimetallic or trimetallic materials with structural metal centers based on Mn, Fe or V  

DOE Green Energy (OSTI)

Bimetallic or trimetallic materials with structural metal centers based on Mn, Fe or V were investigated under this project. These metal centers are the focus of this research as they have high earth abundance and have each shown success as cathode materials in lithium batteries. Silver ion, Ag{sup +}, was initially selected as the displacement material as reduction of this center should result in increased conductivity as Ag{sup 0} metal particles are formed in-situ upon electrochemical reduction. The in-situ formation of metal nanoparticles upon electrochemical reduction has been previously noted, and more recently, we have investigated the resulting increase in conductivity. Layered materials as well as materials with tunnel or channel type structures were selected. Layered materials are of interest as they can provide 2-dimensional ion mobility. Tunnel or channel structures are also of interest as they provide a rigid framework that should remain stable over many discharge/charge cycles. We describe some examples of materials we have synthesized that demonstrate promising electrochemistry.

Takeuchi, Esther Sans [Stony Brook University; Takeuchi, Kenneth James [Stony Brook University; Marschilok, Amy Catherine [Stony Brook University

2013-07-26T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


261

Exploring and enhancing conductivity in semiconductor nanoparticle films  

E-Print Network (OSTI)

Semiconductor nanocrystals (NCs) are a promising material for use in opto-electronic devices as their optical properties tune with particle size. NCs formed via colloidal synthesis are suspended in solution by the organic ...

Porter, Venda Jane

2007-01-01T23:59:59.000Z

262

Self-assembled photosynthesis-inspired light harvesting material and solar cells containing the same  

DOE Patents (OSTI)

A solar cell is described that comprises: (a) a semiconductor charge separation material; (b) at least one electrode connected to the charge separation material; and (c) a light-harvesting film on the charge separation material, the light-harvesting film comprising non-covalently coupled, self-assembled units of porphyrinic macrocycles. The porphyrinic macrocycles preferably comprise: (i) an intramolecularly coordinated metal; (ii) a first coordinating substituent; and (iii) a second coordinating substituent opposite the first coordinating substituent. The porphyrinic macrocycles can be assembled by repeating intermolecular coordination complexes of the metal, the first coordinating substituent and the second coordinating substituent.

Lindsey, Jonathan S. (Raleigh, NC); Chinnasamy, Muthiah (Raleigh, NC); Fan, Dazhong (Raleigh, NC)

2009-12-15T23:59:59.000Z

263

Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices  

DOE Green Energy (OSTI)

This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program that focused on research and development of GaN-based wide bandgap semiconductor materials (referred to as III-N materials). Our theoretical investigations include the determination of fundamental materials parameters from first-principles calculations, the study of gain properties of III-N heterostructures using a microscopic laser theory and density-functional-theory, charge-state calculations to determine the core structure and energy levels of dislocations in III-N materials. Our experimental investigations include time-resolved photoluminescence and magneto-luminescence studies of GaN epilayers and multiquantum well samples as well as x-ray diffraction studies of AlGaN ternary alloys. In addition, we performed a number of experiments to determine how various materials processing steps affect both the optical and electrical properties of GaN-based materials. These studies include photoluminescence studies of GaN epilayers after post-growth rapid thermal annealing, ion implantation to produce n- and p-type material and electrical and optical studies of plasma-etched structures.

Crawford, M.H.; Chow, W.W.; Wright, A.F.; Lee, S.R.; Jones, E.D.; Han, J.; Shul, R.J.

1999-04-01T23:59:59.000Z

264

Mixed Semiconductor Nanocrystal Compositions  

NLE Websites -- All DOE Office Websites (Extended Search)

Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors. Available for thumbnail of Feynman Center (505) 665-9090 Email Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors, wherein energy is transferred from the energy donor to the energy acceptor and wherein: the energy acceptor is a colloidal nanocrystal having a lower band gap energy than the energy donor; the energy donor and the energy acceptor are separated by a distance of 40 nm or less; wherein the average peak absorption energy of the acceptor is at least 20 meV greater than the average peak emission energy of the energy donor; and

265

Photoelectrochemical etching of semiconductors  

Science Conference Proceedings (OSTI)

Photoelectrochemical (PEC) etching of III-V semiconductors has been used to fabricate unique structures in electronic and photonic devices, such as integral lenses on light-emitting diodes, gratings on laser structures, and through-wafer via connections ...

P. A. Kohl

1998-09-01T23:59:59.000Z

266

Corrosion behavior of metallic materials for solid oxide fuel cell applications  

Science Conference Proceedings (OSTI)

Topography and phase composition of the scales formed on commercial ferritic stainless steel and two experimental nickel-based alloys were studied in atmospheres simulating solid oxide fuel cell (SOFC) environments. Corrosion experiments were carried out under SOFC dual environment conditions with air on one side of the sample and hydrogen on the other side for 100 h at 700 C. Post-corrosion surface characterization techniques of the air side of each material included scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction analysis.

Ziomek-Moroz, M.; Cramer, Stephen D.; Holcomb, Gordon R.; Covino, Bernard S., Jr.; Bullard, Sophie J.; Singh, Prabhakar (PNL)

2005-01-01T23:59:59.000Z

267

Coherent multi-exciton dynamics in semiconductor nanostructures via two-dimensional Fourier transform optical spectroscopy  

E-Print Network (OSTI)

The Coulomb correlations between photoexcited charged particles in materials such as photosynthetic complexes, conjugated polymer systems, J-aggregates, and bulk or nanostructured semiconductors produce a hierarchy of ...

Stone, Katherine Walowicz

2009-01-01T23:59:59.000Z

268

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications  

DOE Patents (OSTI)

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

2008-03-18T23:59:59.000Z

269

Use of impure inert gases in the controlled heating and cooling of mixed conducting metal oxide materials  

SciTech Connect

Method for processing an article comprising mixed conducting metal oxide material. The method comprises contacting the article with an oxygen-containing gas and either reducing the temperature of the oxygen-containing gas during a cooling period or increasing the temperature of the oxygen-containing gas during a heating period; during the cooling period, reducing the oxygen activity in the oxygen-containing gas during at least a portion of the cooling period and increasing the rate at which the temperature of the oxygen-containing gas is reduced during at least a portion of the cooling period; and during the heating period, increasing the oxygen activity in the oxygen-containing gas during at least a portion of the heating period and decreasing the rate at which the temperature of the oxygen-containing gas is increased during at least a portion of the heating period.

Carolan, Michael Francis (Allentown, PA); Bernhart, John Charles (Fleetwood, PA)

2012-08-21T23:59:59.000Z

270

Materials  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Materials and methods are available as supplementary materials on Science Online. 16. W. Benz, A. G. W. Cameron, H. J. Melosh, Icarus 81, 113 (1989). 17. S. L. Thompson, H. S. Lauson, Technical Rep. SC-RR-710714, Sandia Nat. Labs (1972). 18. H. J. Melosh, Meteorit. Planet. Sci. 42, 2079 (2007). 19. S. Ida, R. M. Canup, G. R. Stewart, Nature 389, 353 (1997). 20. E. Kokubo, J. Makino, S. Ida, Icarus 148, 419 (2000). 21. M. M. M. Meier, A. Reufer, W. Benz, R. Wieler, Annual Meeting of the Meteoritical Society LXXIV, abstr. 5039 (2011). 22. C. B. Agnor, R. M. Canup, H. F. Levison, Icarus 142, 219 (1999). 23. D. P. O'Brien, A. Morbidelli, H. F. Levison, Icarus 184, 39 (2006). 24. R. M. Canup, Science 307, 546 (2005). 25. J. J. Salmon, R. M. Canup, Lunar Planet. Sci. XLIII, 2540 (2012). Acknowledgments: SPH simulation data are contained in tables S2 to S5 of the supplementary materials. Financial support

271

2006 R&D 100 Award: Materials Resistant to Metal Dusting Degradation,  

NLE Websites -- All DOE Office Websites (Extended Search)

6 R&D 6 R&D 100 Award Director's Welcome Organization Achievements Awards Patents Professional Societies Highlights Fact Sheets, Brochures & Other Documents Multimedia Library About Nuclear Energy Nuclear Reactors Designed by Argonne Argonne's Nuclear Science and Technology Legacy Opportunities within NE Division Visit Argonne Work with Argonne Contact us For Employees Site Map Help Join us on Facebook Follow us on Twitter NE on Flickr Celebrating the 70th Anniversary of Chicago Pile 1 (CP-1) Argonne OutLoud on Nuclear Energy Argonne Energy Showcase 2012 Awards 2006 R&D 100 award Bookmark and Share Printable Organization Chart (70 KB) R&D 100 Awards Awardees: Ken Natesan and Zuotao Zeng Engineering Development & Applications Department Corrosion & Mechanics of Materials Section

272

Atomic hydrogen cleaning of semiconductor photocathodes  

DOE Green Energy (OSTI)

Negative Electron Affinity (NEA) semiconductor photocathodes are widely used for the production of polarized electron beams, and are also useful for the production of high brightness electron beams which can be modulated at very high frequencies. Preparation of an atomically clean semiconductor surface is an essential step in the fabrication of a NEA photocathode. This cleaning step is difficult for certain semiconductors, such as the very thin materials which produce the highest beam polarization, and those which have tightly bound oxides and carbides. Using a small RF dissociation atomic hydrogen source, the authors have reproducibly cleaned GaAs wafers which have been only degreased prior to installation in vacuum. They have consistently prepared very high quantum efficiency photocathodes following atomic hydrogen cleaning. Details of their apparatus and most recent results are presented.

Sinclair, C.K.; Poelker, B.M.; Price, J.S. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

1997-06-01T23:59:59.000Z

273

Emissivity Correcting Pyrometry of Semiconductor Growth  

NLE Websites -- All DOE Office Websites (Extended Search)

Emissivity Correcting Pyrometry of Semiconductor Growth Emissivity Correcting Pyrometry of Semiconductor Growth by W. G. Breiland, L. A. Bruskas, A. A. Allerman, and T. W. Hargett Motivation-Temperature is a critical factor in the growth of thin films by either chemical vapor deposition (CVD) or molecular beam epitaxy (MBE). It is particularly important in compound semiconductor growth because one is often challenged to grow materials with specific chemical compositions in order to maintain stringent lattice-matching conditions or to achieve specified bandgap values. Optical pyrometry can be used to measure surface temperatures, but the thin film growth causes significant changes in the emissivity of the surface, leading to severe errors in the pyrometer measurement. To avoid these errors, emissivity changes must be measured and

274

Phosphorus doping a semiconductor particle  

DOE Patents (OSTI)

A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

Stevens, G.D.; Reynolds, J.S.

1999-07-20T23:59:59.000Z

275

Process for carbonaceous material conversion and recovery of alkali metal catalyst constituents held by ion exchange sites in conversion residue  

DOE Patents (OSTI)

In a coal gasification operation or similar conversion process carried out in the presence of an alkali metal-containing catalyst wherein solid particles containing alkali metal residues are produced, alkali metal constituents are recovered for the particles by contacting or washing them with an aqueous solution containing calcium or magnesium ions in an alkali metal recovery zone at a low temperature, preferably below about 249.degree. F. During the washing or leaching process, the calcium or magnesium ions displace alkali metal ions held by ion exchange sites in the particles thereby liberating the ions and producing an aqueous effluent containing alkali metal constituents. The aqueous effluent from the alkali metal recovery zone is then recycled to the conversion process where the alkali metal constituents serve as at least a portion of the alkali metal constituents which comprise the alkali metal-containing catalyst.

Sharp, David W. (Seabrook, TX)

1980-01-01T23:59:59.000Z

276

RESRAD-RECYCLE : a computer model for analyzing radiation exposures resulting from recycling radioactively contaminated scrap metals or reusing ratioactively surface-contaminated materials and equipment.  

Science Conference Proceedings (OSTI)

RESRAD-RECYCLE is a computer code designed by Argonne National Laboratory (ANL) to be used in making decisions about the disposition of radioactively contaminated materials and scrap metals. It implements a pathway analysis methodology to evaluate potential radiation exposures resulting from the recycling of contaminated scrap metals and the reuse of surface-contaminated materials and equipment. For modeling purposes, it divides the entire metal recycling process into six steps: (1) scrap delivery, (2) scrap melting, (3) ingot delivery, (4) product fabrication, (5) product distribution, and (6) use of finished product. RESRAD-RECYCLE considers the reuse of surface-contaminated materials in their original forms. It contains representative exposure scenarios for each recycling step and the reuse process; users can also specify scenarios if desired. The model calculates individual and collective population doses for workers involved in the recycling process and for the public using the finished products. The results are then used to derive clearance levels for the contaminated materials on the basis of input dose restrictions. The model accounts for radiological decay and ingrowth, dilution and partitioning during melting, and distribution of refined metal in the various finished products, as well as the varying densities and geometries of the radiation sources during the recycling process. A complete material balance in terms of mass and radioactivity during the recycling process can also be implemented. In an international validation study, the radiation doses calculated by RESRAD-RECYCLE were shown to agree fairly well with actual measurement data.

Cheng, J. J.; Kassas, B.; Yu, C.; Arnish, J. J.; LePoire, D.; Chen, S.-Y.; Williams, W. A.; Wallo, A.; Peterson, H.; Environmental Assessment; DOE; Univ. of Texas

2004-11-01T23:59:59.000Z

277

emerging materials - TMS  

Science Conference Proceedings (OSTI)

plenary discussion. Energy and Security; Nuclear Materials; Fuel Cells; Materials for Alternative Energy Applications. Advanced Metallic Composites and ...

278

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents (OSTI)

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon (Pinole, CA); Bruchez, Marcel (Newark, CA); Alivisatos, Paul (Oakland, CA)

2011-12-06T23:59:59.000Z

279

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

2012-10-16T23:59:59.000Z

280

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon (Pinole, CA); Bruchez, Marcel (Newark, CA); Alivisatos, Paul (Oakland, CA)

2011-12-20T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Thermally robust semiconductor optical amplifiers and laser diodes  

DOE Patents (OSTI)

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Dijaili, Sol P. (Moraga, CA); Patterson, Frank G. (Danville, CA); Walker, Jeffrey D. (El Cerrito, CA); Deri, Robert J. (Pleasanton, CA); Petersen, Holly (Manteca, CA); Goward, William (Antioch, CA)

2002-01-01T23:59:59.000Z

282

Light-matter Interactions in Semiconductor Nanostructures  

Science Conference Proceedings (OSTI)

Light-matter interactions in Semiconductor Nanostructures. ... We investigate the interaction of light with semiconductor-based nanostructures. ...

2012-05-30T23:59:59.000Z

283

Dilute magnetic semiconductors in spin-polarized electronics (invited)  

SciTech Connect

Dilute magnetic semiconductors have proven to be very useful in building an all-semiconductor platform for spintronics{emdash}so far they provide the only viable route to establish spin-polarized current injection into a nonmagnetic semiconductor. The reasons for this become apparent from a simple spin-channel model, which predicts that spin injection into a semiconductor can, within linear response, only readily be achieved from a ferromagnetic injector that has: (i) a resistivity that is comparable to the semiconductor and (ii) preferably is 100% spin polarized. Both of these criteria can be met in magnetic semiconductors, but (so far) are hard to achieve using other materials. Experimentally, we demonstrate how dilute magnetic II{endash}VI semiconductors can be used to inject a strongly (up to 90%) spin-polarized current into a light emitting diode. In addition, we discuss the implications of the spin-channel model for the observation of giant magnetoresistance-like effects in the magnetoresistance of an all-semiconductor device. {copyright} 2001 American Institute of Physics.

Schmidt, Georg; Molenkamp, Laurens W.

2001-06-01T23:59:59.000Z

284

Novel room temperature ferromagnetic semiconductors  

SciTech Connect

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

Gupta, Amita

2004-11-01T23:59:59.000Z

285

Argonne licenses diamond semiconductor discoveries to AKHAN Technologies |  

NLE Websites -- All DOE Office Websites (Extended Search)

licenses diamond semiconductor discoveries to AKHAN Technologies licenses diamond semiconductor discoveries to AKHAN Technologies By Joseph Bernstein * By Jared Sagoff * March 4, 2013 Tweet EmailPrint LEMONT, Ill. - The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The Argonne-developed technology allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400 degrees Celsius. The combination of the Argonne's low-temperature diamond technology with AKHAN's Miraj Diamond(tm) process represents the state of the art in diamond semiconductor

286

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2011-10-18T23:59:59.000Z

287

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2010-09-21T23:59:59.000Z

288

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2013-03-12T23:59:59.000Z

289

Wide Bandgap Semiconductors Materials Growth and ...  

Science Conference Proceedings (OSTI)

Progress in 4H SiC Wafers and Epitaxy for Power Electronics Applications: Darren Hansen1; Mark Loboda1; Stephan Mueller1; Jie Zhang1; Bernd Thomas1

290

Semiconductor Materials for Photoelectrolysis - DOE Hydrogen...  

NLE Websites -- All DOE Office Websites (Extended Search)

Hydrogen Production and Delivery Photoelectrochemical Turner - National Renewable Energy Laboratory hydrogen and oxygen spontaneously upon illumination, (ii) has a STH...

291

Computational Design of Complex Semiconductor Materials for ...  

Science Conference Proceedings (OSTI)

Application of Computational Thermodynamics in Solid Oxide Fuel Cell ... Electrical Properties of Point Defects in CdS and ZnS Thin-film PV Buffer Layers.

292

Amorphous semiconductor solar cell  

SciTech Connect

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

Dalal, Vikram L. (Newark, DE)

1981-01-01T23:59:59.000Z

293

Kansas Advanced Semiconductor Project  

SciTech Connect

KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

2007-09-21T23:59:59.000Z

294

Compound semiconductor MOSFETs  

Science Conference Proceedings (OSTI)

Enhancement mode, high electron mobility MOSFET devices have been fabricated using an oxide high-@k gate dielectric stack developed using molecular beam epitaxy. A template layer of Ga"2O"3, initially deposited on the surface of the III-V device unpins ... Keywords: Compound semiconductors, GaAs gate dielectric, III-V MOSFETs

R. Droopad; K. Rajagopalan; J. Abrokwah; P. Zurcher; M. Passlack

2007-09-01T23:59:59.000Z

295

The Minerals, Metals & Materials  

Science Conference Proceedings (OSTI)

Sep 22, 2012 ... Nekuda Malik highlighted in her application for the Fellowship that ... advanced manufacturing; and Department of Energy programs and oversight. ... Now that her Fellowship has concluded, Nekuda Malik will be building on ... 15th Int'l Conference on Environmental Degradation in Nuclear Power Systems

296

The Minerals, Metals & Materials  

Science Conference Proceedings (OSTI)

Mar 20, 2013... the U.S. Department of Energy, and the Defense Advanced Research Projects Agency (DARPA).She describes her research interests as first...

297

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

298

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

299

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

300

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

302

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

303

Gas fixation solar cell using gas diffusion semiconductor electrode  

SciTech Connect

A gas diffusion semiconductor electrode and solar cell and a process for gaseous fixation, such as nitrogen photoreduction, CO/sub 2/ photoreduction and fuel gas photo-oxidation are described. The gas diffusion photosensitive electrode has a central electrolyte porous matrix with an activated semiconductor material on one side adapted to be in contact with an electrolyte and a hydrophobic gas diffusion region on the opposite side adapted to be in contact with a supply of molecular gas.

Ang, P.G.; Sammells, A.F.

1980-12-23T23:59:59.000Z

304

Refractory Metals Committee  

Science Conference Proceedings (OSTI)

The Refractory Metals Committee is part of the Structural Materials Division. Our Mission: Includes all technical aspects of the science of refractory metals and...

305

Materials Science Advanced Materials Portal  

Science Conference Proceedings (OSTI)

... to Discovery of Novel Quantum Spin-Liquid. illustration of metal organic framework Novel Filter Material Could Cut Natural Gas Refining Costs. ...

2013-06-27T23:59:59.000Z

306

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

High Power Electronics Based on the 2-Dimensional Electron Gas in GaN High Power Electronics Based on the 2-Dimensional Electron Gas in GaN Heterostructures by S. R. Kurtz, A. A. Allerman, and D. Koleski Motivation-GaN-based electronics offer miniaturization potential of radical proportions for microwave power amplifiers. GaN's large bandgap, high breakdown field, high electron velocity, and excellent thermal properties have led to high electron mobility transistors (HEMT) with up to 10x the power density of GaAs and other traditional semiconductors at frequencies up to 20 GHz. Further contributing to the outstanding performance of GaN-based amplifiers is the highly conducting, 2-dimensional electron gas (2DEG) used for the HEMT channel. Intrinsic polarization and piezoelectric properties of GaN materials can produce a 2DEG at an

307

Three-Dimensional Topological Insulators in I-III-VI2 and II-IV-V2 Chalcopyrite Semiconductors  

SciTech Connect

The recent discovery of topological insulators with exotic metallic surface states has garnered great interest in the fields of condensed matter physics and materials science.1 A number of spectacular quantum phenomena have been predicted when the surface states are under the influence of magnetism and superconductivity,2 5 which could open up new opportunities for technological applications in spintronics and quantum computing. To achieve this goal, material realization of topological insulators with desired physical properties is of crucial importance. Based on first-principles calculations, here we show that a large number of ternary chalcopyrite compounds of composition I-III-VI2 and II-IV-V2 can realize the topological insulating phase in their native states. The crystal structure of chalcopyrites is derived from the frequently used zinc-blende structure, and many of them possess a close lattice match to important mainstream semiconductors, which is essential for a smooth integration into current semiconductor technology. The diverse optical, electrical and structural properties of chalcopyrite semiconductors,6 and particularly their ability to host room-temperature ferromagnetism,7 9 make them appealing candidates for novel spintronic devices.

Feng, wanxiang [Chinese Academy of Sciences; Ding, Jun [Beijing National Laboratory for Condensed Matter Physics/Chinese Academy of Scie; Xiao, Di [ORNL; Yao, yugui [Chinese Academy of Sciences

2011-01-01T23:59:59.000Z

308

Synthetic Design of New Metal-Organic Framework Materials for Hydrogen Storage - DOE Hydrogen and Fuel Cells Program FY 2012 Annual Progress Report  

NLE Websites -- All DOE Office Websites (Extended Search)

9 9 FY 2012 Annual Progress Report DOE Hydrogen and Fuel Cells Program Pingyun Feng (Primary Contact), Qipu Lin, Xiang Zhao Department of Chemistry University of California Riverside, CA 92521 Phone: (951) 827-2042 Email: pingyun.feng@ucr.edu DOE Program Officer: Dr. Michael Sennett Phone: (301) 903-6051 Email: Michael.Sennett@science.doe.gov Objectives Design and * synthesize new metal-organic framework materials using lightweight chemical elements to help improve gravimetric hydrogen storage capacity. Develop new synthetic strategies to generate novel * active binding sites on metal ions and ligands to enhance solid-gas interactions for increased uptake near ambient conditions.

309

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

2004-03-02T23:59:59.000Z

310

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents (OSTI)

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

2002-01-01T23:59:59.000Z

311

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

312

Chemosensors, biosensors, and microsystems based on standard semiconductor technology (CMOS)  

Science Conference Proceedings (OSTI)

Microfabrication techniques and, in particular, complementary metal oxide semiconductor (CMOS) technology have been used to devise chemosensors, biosensors, and microsystems in a generic approach. Examples of micromachined bio/chemosensors, such as cantilevers ... Keywords: CMOS, bioelectronics, biomicrosystem, biosensor, cells, chemical sensor, microelectronics

Andreas Hierlemann

2007-02-01T23:59:59.000Z

313

Magnetocaloric Materials  

Science Conference Proceedings (OSTI)

Magnetic Materials for Energy Applications IV: Magnetocaloric Materials ... due to cost-effectiveness as well as superior magneto-thermal characteristics. ... metals and p-block elements can be explored in a time- and energy-saving manner.

314

Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles  

SciTech Connect

Semiconductor magnetic tunnel junctions (MTJs), composed of diluted magnetic semiconductors (DMSs) sandwiching a semiconductor barrier, have potential applications in spintronics but their development has been slow due to the difficulty of controlling the magnetism of DMSs. In terms of density functional calculations for model semiconductor MTJs, (Zn,Co)O/ZnO/(Zn,Co)O and (Ga,Mn)N/GaN/(Ga,Mn)N, we show that the magnetic coupling between the transition metal ions in each DMS electrode of such semiconductor MTJs can be switched from ferromagnetic to antiferromagnetic, or vice versa, under the application of external electric field across the junctions. Our results suggest a possible avenue for the application of semiconductor MTJs.

Kan, E.; Xiang, H.; Yang, J.; Whangbo, M. H.

2009-06-01T23:59:59.000Z

315

Molecular Chemistry to the Fore: New Insights into the Fascinating World of Photoactive Colloidal Semiconductor Nanocrystals  

SciTech Connect

Colloidal semiconductor nanocrystals possess unique properties that are unmatched by other chromophores such as organic dyes or transition-metal complexes. These versatile building blocks have generated much scientific interest and found applications in bioimaging, tracking, lighting, lasing, photovoltaics, photocatalysis, thermoelectrics, and spintronics. Despite these advances, important challenges remain, notably how to produce semiconductor nanostructures with predetermined architecture, how to produce metastable semiconductor nanostructures that are hard to isolate by conventional syntheses, and how to control the degree of surface loading or valence per nanocrystal. Molecular chemists are very familiar with these issues and can use their expertise to help solve these challenges. In this Perspective, we present our groups recent work on bottom-up molecular control of nanoscale composition and morphology, low-temperature photochemical routes to semiconductor heterostructures and metastable phases, solar-to-chemical energy conversion with semiconductor-based photocatalysts, and controlled surface modification of colloidal semiconductors that bypasses ligand exchange.

Vela-Becerra, Javier [Ames Laboratory

2013-02-01T23:59:59.000Z

316

Light amplification using semiconductors  

Science Conference Proceedings (OSTI)

During the summer of 1953, John von Neumann discussed his ideas concerning light amplification using semiconductors with Edward Teller. In September of that year, von Neumann sent a manuscript containing his ideas and calculations on this subject to Teller for his comments. To the best of our knowledge, von Neumann did not take time to work further on these ideas, and the manuscript remained unpublished. These previously unpublished writings of John von Neumann on the subject of light amplification in semiconductors are printed as a service to the laser community. While von Neumann's original manuscript and his letter to Teller are available to anyone who visits the Library of Congress, it is much more convenient to have this paper appear in an archival journal.

Dupuis, R.D.

1987-06-01T23:59:59.000Z

317

Ion Beam Modification of Materials  

SciTech Connect

This volume contains the proceedings of the 14th International Conference on Ion Beam Modification of Materials, IBMM 2004, and is published by Elsevier-Science Publishers as a special issue of Nuclear Instruments and Methods B. The conference series is the major international forum to present and discuss recent research results and future directions in the field of ion beam modification, synthesis and characterization of materials. The first conference in the series was held in Budapest, Hungary, 1978, and subsequent conferences were held every two years at locations around the Globe, most recently in Japan, Brazil, and the Netherlands. The series brings together physicists, materials scientists, and ion beam specialists from all over the world. The official conference language is English. IBMM 2004 was held on September 5-10, 2004. The focus was on materials science involving both basic ion-solid interaction processes and property changes occurring either during or subsequent to ion bombardment and ion beam processing in relation to materials and device applications. Areas of research included Nanostructures, Multiscale Modeling, Patterning of Surfaces, Focused Ion Beams, Defects in Semiconductors, Insulators and Metals, Cluster Beams, Radiation Effects in Materials, Photonic Devices, Ion Implantation, Ion Beams in Biology and Medicine including New Materials, Imaging, and Treatment.

Averback, B; de la Rubia, T D; Felter, T E; Hamza, A V; Rehn, L E

2005-10-10T23:59:59.000Z

318

FWP executive summaries, Basic Energy Sciences Materials Sciences Programs (SNL/NM)  

SciTech Connect

The BES Materials Sciences Program has the central theme of Scientifically Tailored Materials. The major objective of this program is to combine Sandia`s expertise and capabilities in the areas of solid state sciences, advanced atomic-level diagnostics and materials synthesis and processing science to produce new classes of tailored materials as well as to enhance the properties of existing materials for US energy applications and for critical defense needs. Current core research in this program includes the physics and chemistry of ceramics synthesis and processing, the use of energetic particles for the synthesis and study of materials, tailored surfaces and interfaces for materials applications, chemical vapor deposition sciences, artificially-structured semiconductor materials science, advanced growth techniques for improved semiconductor structures, transport in unconventional solids, atomic-level science of interfacial adhesion, high-temperature superconductors, and the synthesis and processing of nano-size clusters for energy applications. In addition, the program includes the following three smaller efforts initiated in the past two years: (1) Wetting and Flow of Liquid Metals and Amorphous Ceramics at Solid Interfaces, (2) Field-Structured Anisotropic Composites, and (3) Composition-Modulated Semiconductor Structures for Photovoltaic and Optical Technologies. The latter is a joint effort with the National Renewable Energy Laboratory. Separate summaries are given of individual research areas.

Samara, G.A.

1997-05-01T23:59:59.000Z

319

Executive Summaries for the Hydrogen Storage Materials Center of Excellence - Chemical Hydrogen Storage CoE, Hydrogen Sorption CoE, and Metal Hydride CoE  

NLE Websites -- All DOE Office Websites (Extended Search)

Executive Summaries Executive Summaries for the Hydrogen Storage Materials Centers of Excellence Chemical Hydrogen Storage CoE, Hydrogen Sorption CoE, and Metal Hydride CoE Period of Performance: 2005-2010 Fuel Cell Technologies Program Office of Energy Efficiency and Renewable Energy U. S. Department of Energy April 2012 2 3 Primary Authors: Chemical Hydrogen Storage (CHSCoE): Kevin Ott, Los Alamos National Laboratory Hydrogen Sorption (HSCoE): Lin Simpson, National Renewable Energy Laboratory Metal Hydride (MHCoE): Lennie Klebanoff, Sandia National Laboratory Contributors include members of the three Materials Centers of Excellence and the Department of Energy Hydrogen Storage Team in the Office of Energy Efficiency and Renewable Energy's Fuel Cell Technologies Program.

320

DD4, Double Heterojunction Metal-Semiconductor-Metal ...  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Composite Materials Committee  

Science Conference Proceedings (OSTI)

Metal-Matrix Composites in Industry: A Database of Companies, Materials, and Products (TMS Members Only) Technical Questions @ TMS: Metal-Matrix...

322

Methods of forming semiconductor devices and devices formed using such methods  

SciTech Connect

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

2013-05-21T23:59:59.000Z

323

Photocatalytic semiconductor clusters for fuel production  

DOE Green Energy (OSTI)

High quality crystalline, monodisperse nanometer-size semiconductor clusters were successfully grown using an inverse micellar synthesis process and their optical and structural properties were studied. Among the materials studied were PbS, FeS{sub 2}, MoS{sub 2}, CdS and related compounds. The results demonstrated strong electronic quantum confinement effects and broad tailorability of the bandgaps with decreasing cluster size, features that are important for the potential use of these materials as photocatalysts for solar fuel production and solar detoxification. The highlights of the work are included in an Executive Summary.

Wilcoxon, J.P.; Bliss, D.E.; Martin, J.E. [and others

1995-10-01T23:59:59.000Z

324

Thermostat Metals  

Science Conference Proceedings (OSTI)

...A thermostat metal is a composite material (usually in the form of sheet or strip) that consists of two or more materials bonded together, of which one can be a nonmetal. Because the materials bonded together to form the composite differ in

325

Materials Reliability Program: Primary Water Stress Corrosion Testing of Alloys 690 and Weld Metals -- An Update (MRP-309)  

Science Conference Proceedings (OSTI)

Primary water stress corrosion cracking (PWSCC) continues to cause increased costs for operation, maintenance, assessment, and repair of thick-walled, pressurized water reactor (PWR) components made of Alloy 600 and its weld metals Alloys 182 and 82. Thick-section Alloy 690 and its weld metals (Alloys 52, or 52M, and 152) are now being widely used, particularly for nozzle penetrations during replacement of RPV heads and for repairs to other components in the primary system. Three reports have already bee...

2011-12-13T23:59:59.000Z

326

Semiconductor P-I-N detector  

DOE Patents (OSTI)

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Sudharsanan, Rengarajan (53 Timber Line Dr., Nashua, NH 03062); Karam, Nasser H. (577 Lowell St., Lexington, MA 02173)

2001-01-01T23:59:59.000Z

327

Refractory Metals 2011  

Science Conference Proceedings (OSTI)

Aug 2, 2010 ... TMS Structural Materials Division TMS: Refractory Metals Committee. Organizer( s), Omer Dogan, DOE National Energy Technology Laboratory

328

Materials Science  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Science Materials Science Materials Science1354608000000Materials ScienceSome of these resources are LANL-only and will require Remote Access./No/Questions? 667-5809library@lanl.gov Materials Science Some of these resources are LANL-only and will require Remote Access. Key Resources Data Sources Reference Organizations Journals Key Resources CINDAS Materials Property Databases video icon Thermophysical Properties of Matter Database (TPMD) Aerospace Structural Metals Database (ASMD) Damage Tolerant Design Handbook (DTDH) Microelectronics Packaging Materials Database (MPMD) Structural Alloys Handbook (SAH) Proquest Technology Collection Includes the Materials Science collection MRS Online Proceedings Library Papers presented at meetings of the Materials Research Society Data Sources

329

A discussion on the application and production of metal ion beams  

SciTech Connect

Metal ion beams, which are used in surface modification of metals and alloys as ion beam micrometallurgy, are promising candidates for advanced applications in semiconductors and insulators. Doping with transition metal and rare-earth metal ions in semiconductors and insulators to form metallic nanoclusters attracted much more attention recently, since their applications in diluted magnetic semiconductors, electroluminescent devices, giant magnetic resistance, etc. In this paper, some experiments for metal ion beams will be presented, and various methods and technologies for the production of metal ion beams will be discussed.

Ren Xiaotang; Zhao Ziqiang; Zhao Weijiang [Institute of Heavy Ion Physics, Peking University, Beijing, 100871 (China) and Key Laboratory of Heavy Ion Physics (Peking University), Ministry of Education, Beijing 100871 (China)

2008-02-15T23:59:59.000Z

330

Argonne CNM News: State-of-the-Art Diamond Semiconductor Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies, Inc., exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The method allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400°C, highly advantageous for integration with processed semiconductor electronic materials and resulting in the deposition of low-defect nanocrystalline diamond (NCD) thin films. The combination of CNM's low-temperature diamond technology with the AKHAN Miraj Diamond(tm) process represents the state of the art in diamond semiconductor thin-film technology.

331

L9, LATE NEWS: Electrical and Materials Reliability Issues in Single ...  

Science Conference Proceedings (OSTI)

In the 2009 International Technology Roadmap for Semiconductors [1], ..... Activated Charcoal-Carbon Fabrics Composite Electrode Materials for Supercapacitor...

332

Climate VISION: Private Sector Initiatives: Semiconductors: Resources...  

Office of Scientific and Technical Information (OSTI)

FederalState Programs PFC ReductionClimate Partnership for the Semiconductor Industry Launched in 1996 in collaboration with the Semiconductor Industry Association, EPA's PFC...

333

Method Of Transferring Strained Semiconductor Structures  

NLE Websites -- All DOE Office Websites (Extended Search)

Of Transferring Strained Semiconductor Structures Of Transferring Strained Semiconductor Structures Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. June 25, 2013 Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having

334

Sandia National Labs: PCNSC: Research: Compound Semiconductor...  

NLE Websites -- All DOE Office Websites (Extended Search)

Compound Semiconductor Science and Technology Thrust The Physical, Chemical, and Nano Sciences Center's vision for Compound Semiconductors is to develop the science of compound...

335

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

336

Risk assessment of the health liabilities from exposure to toxic metals found in the composted material of Air Force municipal solid waste. Master's thesis  

Science Conference Proceedings (OSTI)

This thesis assesses the risk of the health liabilities from exposure to toxic metals found in the composted material of Air Force municipal solid waste (MSW). The goal is to determine the probability that the composted MSW could be a health hazard if it were used as a soil amendment. The research limited the assessment of the exposure risk to heavy metals found in raw MSW and its resulting compost. The thesis uses reviews of present literature to examine the food and soil ingestion exposure pathways. These pathways are assessed using the heavy metal concentrations found in MSW compost and the soil-plant partition coefficients of vegetables grown in soil mixed with sewage sludge or soil irrigated with sewage sludge or soil irrigated with sewage sludge leachate. The recommendation resulting from this research is that the Air Force should not use MSW composting as part of its future solid waste management plan. This alternative to landfilling contains a chronic health risk that is greater than the Environmental Protection Agency's guideline. If the Air Force would use MSW composting in the future, it may endanger Air Force personnel and others who use the compost created from Air Force MSW. Risk assessment, Heavy metals, Recycling municipal solid waste, Pollution, Composting.

Merrymon, T.L.

1993-09-01T23:59:59.000Z

337

Information about Materials Properties  

Science Conference Proceedings (OSTI)

Table 6   Examples of materials information required during detail design...identification Material class (metal, plastic, ceramic composite) Material subclass Material industry designation Material product form Material condition designation (temper, heat treatment, etc.) Material specification Material alternative names Material component designations (composite/assembly)...

338

Mesoscopic Magnetic/Semiconductor Heterostructures  

Science Conference Proceedings (OSTI)

We report the experimental results of Fe and Fe3O4 nanostructures on GaAs(100) surfaces and hybrid Ferromagnetic/Semiconductor/Ferromagnetic (FM/SC/FM) spintronic devices. Element specific x-ray magnetic circular dichroism (XMCD) ... Keywords: Epitaxial ferromagnetic thin film, ferromagnetic/semiconductor hybrid structures, spintronics

Yong Bing Xu; E. Ahmad; Yong Xiong Lu; J. S. Claydon; Ya Zhai; G. van der Laan

2006-09-01T23:59:59.000Z

339

Effect of residual chips on the material removal process of the bulk metallic glass studied by in situ scratch testing inside the scanning electron microscope  

Science Conference Proceedings (OSTI)

Research on material removal mechanism is meaningful for precision and ultra-precision manufacturing. In this paper, a novel scratch device was proposed by integrating the parasitic motion principle linear actuator. The device has a compact structure and it can be installed on the stage of the scanning electron microscope (SEM) to carry out in situ scratch testing. Effect of residual chips on the material removal process of the bulk metallic glass (BMG) was studied by in situ scratch testing inside the SEM. The whole removal process of the BMG during the scratch was captured in real time. Formation and growth of lamellar chips on the rake face of the Cube-Corner indenter were observed dynamically. Experimental results indicate that when lots of chips are accumulated on the rake face of the indenter and obstruct forward flow of materials, materials will flow laterally and downward to find new location and direction for formation of new chips. Due to similar material removal processes, in situ scratch testing is potential to be a powerful research tool for studying material removal mechanism of single point diamond turning, single grit grinding, mechanical polishing and grating fabrication.

Huang Hu; Zhao Hongwei; Shi Chengli; Wu Boda; Fan Zunqiang; Wan Shunguang; Geng Chunyang [College of Mechanical Science and Engineering, Jilin University, Renmin Street 5988, Changchun, Jilin 130025 (China)

2012-12-15T23:59:59.000Z

340

Method for measuring the drift mobility in doped semiconductors  

DOE Patents (OSTI)

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.

Crandall, Richard S. (Princeton, NJ)

1982-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Method for measuring the drift mobility in doped semiconductors  

DOE Patents (OSTI)

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

Crandall, R.S.

1982-03-09T23:59:59.000Z

342

LCD, low-temperature soldering and compound semiconductor : the sources, market, applications and future prospects of indium in Malaysia  

E-Print Network (OSTI)

Indium is a minor but very valuable metal. Decreasing supplies of indium from refining and increasing demands from LCD, low-temperature soldering and compound semiconductors have stimulated the indium price increase ...

Yong, Foo Nun

2006-01-01T23:59:59.000Z

343

Materials Reference Books  

Science Conference Proceedings (OSTI)

Materials Science Reference Books. ... The Smithells Metals Reference Book Brandis and Brook; Butterworth-Heinemann; Published 1992; ISBN ...

2010-10-05T23:59:59.000Z

344

Materials Processing Fundamentals  

Science Conference Proceedings (OSTI)

About this Symposium. Meeting, 2010 TMS Annual Meeting & Exhibition. Symposium, Materials Processing Fundamentals. Sponsorship, The Minerals, Metals...

345

Photoelectrochemistry of Semiconductor Nanowire Arrays  

DOE Green Energy (OSTI)

This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

Mallouk, Thomas E; Redwing, Joan M

2009-11-10T23:59:59.000Z

346

Recipients: The 2001 LMD Light Metals Award  

Science Conference Proceedings (OSTI)

The Minerals, Metals & Materials Society's Light Metals Division Light Metals Award, established in 1983, is awarded to the author(s) of a paper published in the...

347

Recipients: The 2003 LMD Light Metals Award  

Science Conference Proceedings (OSTI)

The Minerals, Metals & Materials Society's Light Metals Division Light Metals Award, established in 1983, is awarded to the author(s) of a paper published in the...

348

Recipients: The 2002 LMD Light Metals Award  

Science Conference Proceedings (OSTI)

The Minerals, Metals & Materials Society's Light Metals Division Light Metals Award, established in 1983, is awarded to the author(s) of a paper published in the...

349

Recipients: The 2004 LMD Light Metals Award  

Science Conference Proceedings (OSTI)

The Minerals, Metals & Materials Society's Light Metals Division Light Metals Award, established in 1983, is awarded to the author(s) of a paper published in the...

350

Recipient: 1997 LMD Light Metals Technical Service Award  

Science Conference Proceedings (OSTI)

TMS Logo. Recipient: 1997 LMD Light Metals Technical Service Award. The Minerals, Metals & Materials Society's Light Metals Division Light Metals Technical...

351

Hardfacing material  

SciTech Connect

A method of producing a hard metallic material by forming a mixture containing at least 55% iron and at least one of boron, carbon, silicon and phosphorus. The mixture is formed into an alloy and cooled to form a metallic material having a hardness of greater than about 9.2 GPa. The invention includes a method of forming a wire by combining a metal strip and a powder. The metal strip and the powder are rolled to form a wire containing at least 55% iron and from two to seven additional elements including at least one of C, Si and B. The invention also includes a method of forming a hardened surface on a substrate by processing a solid mass to form a powder, applying the powder to a surface to form a layer containing metallic glass, and converting the glass to a crystalline material having a nanocrystalline grain size.

Branagan, Daniel J. (Iona, ID)

2012-01-17T23:59:59.000Z

352

Hydrogen in compound semiconductors  

DOE Green Energy (OSTI)

Progress in the understanding of hydrogen and its interactions in III/V and II/VI compound semiconductors is reviewed. Donor, acceptor and deep level passivation is well established in III/V compounds based on electrical measurements and on spectroscopic studies. The hydrogen donor levels in GaAs and GaP are estimated to lie near E{sub v}+0.5 eV and E{sub v}+0.3 eV, respectively. Arsenic acceptors have been passivated by hydrogen in CdTe and the very first nitrogen-hydrogen local vibrational model spectra in ZnSe have been reported. This long awaited result may lead to an explanation for the poor activation of nitrogen acceptors in ZnSe grown by techniques which involve high concentrations of hydrogen.

Haller, E.E.

1993-05-01T23:59:59.000Z

353

Materials management in an internationally safeguarded fuels reprocessing plant. [1500 and 210 metric tons heavy metal per year  

SciTech Connect

The second volume describes the requirements and functions of materials measurement and accounting systems (MMAS) and conceptual designs for an MMAS incorporating both conventional and near-real-time (dynamic) measurement and accounting techniques. Effectiveness evaluations, based on recently developed modeling, simulation, and analysis procedures, show that conventional accountability can meet IAEA goal quantities and detection times in these reference facilities only for low-enriched uranium. Dynamic materials accounting may meet IAEA goals for detecting the abrupt (1-3 weeks) diversion of 8 kg of plutonium. Current materials accounting techniques probably cannot meet the 1-y protracted-diversion goal of 8 kg for plutonium.

Hakkila, E.A.; Cobb, D.D.; Dayem, H.A.; Dietz, R.J.; Kern, E.A.; Markin, J.T.; Shipley, J.P.; Barnes, J.W.; Scheinman, L.

1980-04-01T23:59:59.000Z

354

Thermal Conductivity of Polycrystalline Semiconductors and Ceramics  

E-Print Network (OSTI)

industries, polycrystalline semiconductors and ceramics havelaser industry, people are also seeking good ceramic laser

Wang, Zhaojie

2012-01-01T23:59:59.000Z

355

Energy Basics: Photovoltaic Cell Materials  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

one crystal to another. Bandgap The bandgap of a semiconductor material is the minimum energy needed to move an electron from its bound state within an atom to a free state. This...

356

3.225 Electronic and Mechanical Properties of Materials, Summer 2002  

E-Print Network (OSTI)

Electrical, optical, magnetic, and mechanical properties of metals, semiconductors, ceramics and polymers. Discussion of roles of bonding, structure (crystalline, defect, energy band and microstructure) and composition in ...

Gibson, Lorna J.

2002-01-01T23:59:59.000Z

357

High-Performance Corrosion-Resistant Materials: Iron-Based Amorphous-Metal Thermal-Spray Coatings: SAM HPCRM Program ? FY04 Annual Report ? Rev. 0 - DARPA DSO & DOE OCRWM Co-Sponsored Advanced Materials Program  

Science Conference Proceedings (OSTI)

The multi-institutional High Performance Corrosion Resistant Materials (HPCRM) Team is cosponsored by the Defense Advanced Projects Agency (DARPA) Defense Science Office (DSO) and the Department of Energy (DOE) Office of Civilian Radioactive Waste Management (OCRWM), and has developed new corrosion-resistant, iron-based amorphous metals that can be applied as coatings with advanced thermal spray technology. Two compositions have corrosion resistance superior to wrought nickel-based Alloy C-22 (UNS No. N06022) in very aggressive environments, including concentrated calcium-chloride brines at elevated temperature. Corrosion costs the Department of Defense billions of dollars every year, with an immense quantity of material in various structures undergoing corrosion. For example, in addition to fluid and seawater piping, ballast tanks, and propulsions systems, approximately 345 million square feet of structure aboard naval ships and crafts require costly corrosion control measures. The use of advanced corrosion-resistant materials to prevent the continuous degradation of this massive surface area would be extremely beneficial. The Fe-based corrosion-resistant, amorphous-metal coatings under development may prove of importance for applications on ships. Such coatings could be used as an 'integral drip shield' on spent fuel containers, as well as protective coatings that could be applied over welds, thereby preventing exposure to environments that might cause stress corrosion cracking. In the future, such new high-performance iron-based materials could be substituted for more-expensive nickel-based alloys, thereby enabling a reduction in the $58-billion life cycle cost for the long-term storage of the Nation's spent nuclear fuel by tens of percent.

Farmer, J; Haslam, J; Wong, F; Ji, S; Day, S; Branagan, D; Marshall, M; Meacham, B; Buffa, E; Blue, C; Rivard, J; Beardsley, M; Buffa, E; Blue, C; Rivard, J; Beardsley, M; Weaver, D; Aprigliano, L; Kohler, L; Bayles, R; Lemieux, E; Wolejsza, T; Martin, F; Yang, N; Lucadamo, G; Perepezko, J; Hildal, K; Kaufman, L; Heuer, A; Ernst, F; Michal, G; Kahn, H; Lavernia, E

2007-09-19T23:59:59.000Z

358

Novel air electrode for metal-air battery with new carbon material and method of making same  

DOE Patents (OSTI)

This invention relates to a rechargeable battery or fuel cell. More particularly, this invention relates to a novel air electrode comprising a new carbon electrode support material and a method of making same. 3 figs.

Ross, P.N. Jr.

1988-06-21T23:59:59.000Z

359

Prediction of semiconductor band edge positions in aqueous environments from first principles  

E-Print Network (OSTI)

The ability to predict a semiconductor's band edge positions in solution is important for the design of water-splitting photocatalyst materials. In this paper, we introduce a first-principles method to compute the ...

Wu, Yabi

360

Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor  

E-Print Network (OSTI)

We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this old semiconductor material used for the first transistor more than ...

Jifeng, Liu

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation  

E-Print Network (OSTI)

in standard semiconductor THz emitters may lead to identification of superior materials and excitation) 2806. [7] J.L. Oudar, D. Hulin, A. Migus, A. Antonetti, F. Alexandre, Phys. Rev. Lett. 55 (1985) 2074

Strathclyde, University of

362

Physics and simulation of transport processes in hybrid organic semiconductor devices  

E-Print Network (OSTI)

Organic semiconductors and nanomaterials promise to potentially form the basis for future efficient and cost-effective large area optoelectronic devices, such as lightemitting diodes and solar cells. Although these materials' ...

Rousseau, Ian Michael

2010-01-01T23:59:59.000Z

363

The Entire Material Science Archive  

NLE Websites -- All DOE Office Websites (Extended Search)

Archives, Since January 2005 Table of Contents: Materials Scientist Two Phase Materials Nano-technology Projections Scents in Scented Candles Rubber Band Materials Metallic...

364

On the State of the Art of Metal Interconnects for SOFC Application  

Science Conference Proceedings (OSTI)

One of the recent developments for Solid Oxide Fuel Cells (SOFC) is oxide component materials capable of operating at lower temperatures such as 700-800C. This lower temperature range has provided for the consideration of metallic interconnects which have several advantages over ceramic interconnects: low cost, ease in manufacturing, and high conductivity. Most metals and alloys will oxidize under both the anode and cathode conditions within an SOFC, thus a chief requirement is that the base metal oxide scale must be electrically conductive since this constitutes the majority of the electrical resistance in a metallic interconnect. Common high temperature alloys form scales that contain chrome, silicon and aluminum oxides among others. Under SOFC operating conditions chrome oxide is a semi-conductor while silicon and aluminum oxides are insulators. In this talk we will review the evolution in candidate alloys and surface modifications which constitute an engineered solution for SOFC interconnect applications.

Jablonski@netl.doe.gov

2011-02-27T23:59:59.000Z

365

Toward a Unified Treatment of Electronic Processes in Organic Semiconductors  

DOE Green Energy (OSTI)

A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: (1) the equilibrium free carrier density, nf, is a small fraction of the total charge density; (2) a superlinear increase in conductivity with doping density is universal; (3) nf increases with applied electric field; and (4) the carrier mobility is field-dependent regardless of crystallinity.

Gregg. B.A.

2005-01-01T23:59:59.000Z

366

Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents (OSTI)

A luminescent semiconductor nanocrystal compound is described which is capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation (luminescing) in a narrow wavelength band and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The luminescent semiconductor nanocrystal compound is linked to an affinity molecule to form an organo luminescent semiconductor nanocrystal probe capable of bonding with a detectable substance in a material being analyzed, and capable of emitting electromagnetic radiation in a narrow wavelength band and/or absorbing, scattering, or diffracting energy when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam. The probe is stable to repeated exposure to light in the presence of oxygen and/or other radicals. Further described is a process for making the luminescent semiconductor nanocrystal compound and for making the organo luminescent semiconductor nanocrystal probe comprising the luminescent semiconductor nanocrystal compound linked to an affinity molecule capable of bonding to a detectable substance. A process is also described for using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

1999-01-01T23:59:59.000Z

367

Durable metallized polymer mirror  

DOE Patents (OSTI)

A metallized polymer mirror construction is disclosed having improved durability against delamination and tunneling, comprising: an outer layer of polymeric material; a metal oxide layer underlying the outer layer of polymeric material; a silver reflective layer underneath the metal oxide layer; and a layer of adhesive attaching the silver layer to a substrate. 6 figs.

Schissel, P.O.; Kennedy, C.E.; Jorgensen, G.J.; Shinton, Y.D.; Goggin, R.M.

1994-11-01T23:59:59.000Z

368

OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES  

Science Conference Proceedings (OSTI)

This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

Grant, C D; Zhang, J Z

2007-09-28T23:59:59.000Z

369

Oxides and nitrides as alternative plasmonic materials in the optical range  

E-Print Network (OSTI)

As alternatives to conventional metals, new plasmonic materials offer many advantages in the rapidly growing fields of plasmonics and metamaterials. These advantages include low intrinsic loss, semiconductor-based design, compatibility with standard nanofabrication processes, tunability, and others. Transparent conducting oxides such as Al:ZnO, Ga:ZnO and indium-tin-oxide (ITO) enable many high-performance metamaterial devices operating in the near-IR. Transition-metal nitrides such as TiN or ZrN can be substitutes for conventional metals in the visible frequencies. In this paper we provide the details of fabrication and characterization of these new materials and discuss their suitability for a number of metamaterial and plasmonic applications.

Naik, Gururaj V; Boltasseva, Alexandra

2011-01-01T23:59:59.000Z

370

Simulating nanoscale semiconductor devices.  

SciTech Connect

The next generation of electronic devices will be developed at the nanoscale and molecular level, where quantum mechanical effects are observed. These effects must be accounted for in the design process for such small devices. One prototypical nanoscale semiconductor device under investigation is a resonant tunneling diode (RTD). Scientists are hopeful the quantum tunneling effects present in an RTD can be exploited to induce and sustain THz frequency current oscillations. To simulate the electron transport within the RTD, the Wigner-Poisson equations are used. These equations describe the time evolution of the electrons distribution within the device. In this paper, this model and a parameter study using this model will be presented. The parameter study involves calculating the steady-state current output from the RTD as a function of an applied voltage drop across the RTD and also calculating the stability of that solution. To implement the parameter study, the computational model was connected to LOCA (Library of Continuation Algorithms), a part of Sandia National Laboratories parallel solver project, Trilinos. Numerical results will be presented.

Salinger, Andrew Gerhard; Zhao, P. (North Carolina State University, Raleigh, NC); Woolard, D. L. (U. S. Army Research Laboratory, NC); Kelley, C. Tim (North Carolina State University, Raleigh, NC); Lasater, Matthew S. (North Carolina State University, Raleigh, NC)

2005-03-01T23:59:59.000Z

371

Theoretical studies of surface reactions on metals and electronic materials. Progress report, October 1, 1990--January 31, 1993  

DOE Green Energy (OSTI)

Studies of a variety of adsorbates on Ni have been completed; adsorption energies were determined for CH, CH{sub 2}, CH{sub 3}, H, NH{sub 3}, H{sub 2}O, and C{sub 6}H{sub 6} on Ni(111). A refined calculation of the reaction of methane with Ni was completed. Other studies included H{sub 2} and SiH{sub 4} adsorption/decomposition on Si surfaces, Si-Si dimer bond length, activity energy barriers for reaction of CH{sub 4}and CH{sub 3}F with Si(111). Studies were begun on deposition of C on Ni(111). New directions were explored for reaction of methane with transition metal surfaces; work was completed for a Ni(111) surface containing a substitutional iron atom. Twenty abstracts of papers are presented.

Whitten, J.L.

1993-01-31T23:59:59.000Z

372

Quantum Effect Materials: Methods of Fabrication of Quantum ... - TMS  

Science Conference Proceedings (OSTI)

Session A: Quantum Effect Materials: Methods of Fabrication of Quantum Dots. Session ... Nanometer size semiconductor crystallites show a striking evolution of ...

373

Optical Fiber Chemical Sensor with Sol-Gel Derived Refractive Material as Transducer for High Temperature Gas Sensing in Clean Coal Technology  

SciTech Connect

The chemistry of sol-gel derived silica and refractive metal oxide has been systematically studied. Sol-gel processes have been developed for preparing porous silica and semiconductor metal oxide materials. Micelle/reversed micelle techniques have been developed for preparing nanometer sized semiconductor metal oxides and noble metal particles. Techniques for doping metal ions, metal oxides and nanosized metal particles into porous sol-gel material have also been developed. Optical properties of sol-gel derived materials in ambient and high temperature gases have been studied by using fiber optic spectroscopic techniques, such as fiber optic ultraviolet/visible absorption spectrometry, fiber optic near infrared absorption spectrometry and fiber optic fluorescence spectrometry. Fiber optic spectrometric techniques have been developed for investigating the optical properties of these sol-gel derived materials prepared as porous optical fibers or as coatings on the surface of silica optical fibers. Optical and electron microscopic techniques have been used to observe the microstructure, such as pore size, pore shape, sensing agent distribution, of sol-gel derived material, as well as the size and morphology of nanometer metal particle doped in sol-gel derived porous silica, the nature of coating of sol-gel derived materials on silica optical fiber surface. In addition, the chemical reactions of metal ion, nanostructured semiconductor metal oxides and nanometer sized metal particles with gas components at room temperature and high temperatures have also been investigated with fiber optic spectrometric methods. Three classes of fiber optic sensors have been developed based on the thorough investigation of sol-gel chemistry and sol-gel derived materials. The first group of fiber optic sensors uses porous silica optical fibers doped with metal ions or metal oxide as transducers for sensing trace NH{sub 3} and H{sub 2}S in high temperature gas samples. The second group of fiber optic sensors uses sol-gel derived porous silica materials doped with nanometer particles of noble metals in the form of fiber or coating for sensing trace H{sub 2}, NH{sub 3} and HCl in gas samples at for applications ambient temperature. The third classes of fiber optic sensors use sol-gel derived semiconductor metal oxide coating on the surface of silica optical fiber as transducers for selectively sensing H{sub 2}, CH{sub 4} and CO at high temperature. In addition, optical fiber temperature sensors use the fluorescence signal of rare-earth metal ions doped porous silica optical fiber or the optical absorption signal of thermochromic metal oxide materials coated on the surface of silica optical fibers have also been developed for monitoring gas temperature of corrosive gas. Based on the results obtained from this project, the principle of fiber optic sensor techniques for monitoring matrix gas components as well as trace components of coal gasification derived syngas has been established. Prototype sensors for sensing trace ammonia and hydrogen sulfide in gasification derived syngas have been built up in our laboratory and have been tested using gas samples with matrix gas composition similar to that of gasification derived fuel gas. Test results illustrated the feasibility of these sensors for applications in IGCC processes.

Shiquan Tao

2006-12-31T23:59:59.000Z

374

Elements of Doping Engineering in Semiconductors  

DOE Green Energy (OSTI)

Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors. The dependencies of the defect formation enthalpy on the atomic chemical potentials and on the electron Fermi energy are demonstrated. These dependencies, in particular on the Fermi energy, lead to spontaneous formation of charge-compensating defects that can limit doping. Experimental data compiled for III-V, II-VI, and I-III-VI2 compounds support this view and further provide insight into the connections among different host materials. We argue that what matters is not the magnitude of the band gap that determines the dopability of a material, but rather, the relative position of the conduction-band minimum (in the case of n-doping) and the valence-band maximum (in the case of p-doping) with respect to vacuum.

Zhang, S. B.; Wei, S.; Zunger, A.

1998-11-09T23:59:59.000Z

375

Bulk Metallic Glasses VII  

Science Conference Proceedings (OSTI)

Sponsorship, The Minerals, Metals and Materials Society ... Air-Oxidation of a ( Zr55Cu30Al10Ni5)98Er2 Bulk Metallic Glass at 350-500oc Anelastic...

376

Sudook Kim  

Science Conference Proceedings (OSTI)

... materials, magnetic materials, monocrystals, metals and alloys, composites, polymers, semiconductors, superconductors, and piezoelectric ...

2012-10-01T23:59:59.000Z

377

Activation of molecular catalysts using semiconductor quantum dots  

DOE Patents (OSTI)

Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

Meyer, Thomas J. (Chapel Hill, NC); Sykora, Milan (Los Alamos, NM); Klimov, Victor I. (Los Alamos, NM)

2011-10-04T23:59:59.000Z

378

Nanostructured materials for hydrogen storage  

DOE Patents (OSTI)

A system for hydrogen storage comprising a porous nano-structured material with hydrogen absorbed on the surfaces of the porous nano-structured material. The system of hydrogen storage comprises absorbing hydrogen on the surfaces of a porous nano-structured semiconductor material.

Williamson, Andrew J. (Pleasanton, CA); Reboredo, Fernando A. (Pleasanton, CA)

2007-12-04T23:59:59.000Z

379

HIGHWAY INFRASTRUCTURE FOCUS AREA NEXT-GENERATION INFRASTRUCTURE MATERIALS VOLUME I - TECHNICAL PROPOSAL & MANAGEMENTENHANCEMENT OF TRANSPORTATION INFRASTRUCTURE WITH IRON-BASED AMORPHOUS-METAL AND CERAMIC COATINGS  

Science Conference Proceedings (OSTI)

The infrastructure for transportation in the United States allows for a high level of mobility and freight activity for the current population of 300 million residents, and several million business establishments. According to a Department of Transportation study, more than 230 million motor vehicles, ships, airplanes, and railroads cars were used on 6.4 million kilometers (4 million miles) of highways, railroads, airports, and waterways in 1998. Pipelines and storage tanks were considered to be part of this deteriorating infrastructure. The annual direct cost of corrosion in the infrastructure category was estimated to be approximately $22.6 billion in 1998. There were 583,000 bridges in the United States in 1998. Of this total, 200,000 bridges were steel, 235,000 were conventional reinforced concrete, 108,000 bridges were constructed using pre-stressed concrete, and the balance was made using other materials of construction. Approximately 15 percent of the bridges accounted for at this point in time were structurally deficient, primarily due to corrosion of steel and steel reinforcement. Iron-based amorphous metals, including SAM2X5 (Fe{sub 49.7}Cr{sub 17.7}Mn{sub 1.9}Mo{sub 7.4}W{sub 1.6}B{sub 15.2}C{sub 3.8}Si{sub 2.4}) and SAM1651 (Fe{sub 48}Mo{sub 14}Cr{sub 15}Y{sub 2}C{sub 15}B{sub 6}) have been developed, and have very good corrosion resistance. These materials have been prepared as a melt-spun ribbons, as well as gas atomized powders and thermal-spray coatings. During electrochemical testing in several environments, including seawater at 90 C, the passive film stabilities of these materials were found to be comparable to that of more expensive high-performance alloys, based on electrochemical measurements of the passive film breakdown potential and general corrosion rates. These materials also performed very well in standard salt fog tests. Chromium (Cr), molybdenum (Mo) and tungsten (W) provided corrosion resistance, and boron (B) enabled glass formation. The high boron content of this particular amorphous metal made it an effective neutron absorber, and suitable for criticality control applications. These amorphous alloys appear to maintain their corrosion resistance up to the glass transition temperature. Visionary research is proposed to extend the application of corrosion-resistant iron-based amorphous metal coatings, and variants of these coatings, to protection of the Nation's transportation infrastructure. Specific objectives of the proposed work are: (1) fabrication of appropriate test samples for evaluation of concept; (2) collection of production and test data for coated steel reinforcement bars, enabling systematic comparison of various coating options, based upon performance and economic considerations; and (3) construction and testing of concrete structures with coated steel reinforcement bars, thereby demonstrating the value of amorphous-metal coatings. The benefits of ceramic coatings as thermal barriers will also be addressed.

Farmer, J C

2007-12-04T23:59:59.000Z

380

A two-fold interpenetrating 3D metal-organic framework material constructed from helical chains linked via 4,4'-H{sub 2}bpz fragments  

SciTech Connect

A 3-connected dia-f-type metal-organic framework compound {l_brace}[Ag(L){sub 3/2}H{sub 2}PO{sub 4}]{r_brace}{sub n} (1) has been synthesized by self-assembly of 4,4'-H{sub 2}bpz (L=4,4'-H{sub 2}bpz=3,3',5,5'-tetramethyl-4,4'-bipyrazole) and Ag{sub 4}P{sub 2}O{sub 7} under hydrothermal conditions. It crystallizes in the tetragonal space group I4{sub 1}/acd with a=21.406(4) A, b=21.406(4) A, c=36.298(8) A, Z=32. X-ray single-crystal diffraction reveals that 1 has a three-dimensional framework with an unprecedented alternate left- and right-handed helices structure, featuring a non-uniform two-fold interpenetrated (4.14{sup 2}) net. Photoluminescent investigation reveals that the title compound displays interesting emissions in a wide region, which shows that the title compound may be a good potential candidate as a photoelectric material. - Graphical abstract: A 3-connected dia-f-type metal-organic framework compound [Ag(4,4'-bpz){sub 3/2}H{sub 2}PO{sub 4}] shows unprecedented alternating left- and right-handed helices structure, featuring a non-uniform two-fold interpenetrated (4.14{sup 2}) net.

Xie Yiming [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 35002 (China); College of Materials Science and Engineering, Huaqiao University, the Key Laboratory for Functional Materials of Fujian Higher Education, Quanzhou, Fujian 362021 (China); Zhao Zhenguo; Wu Xiaoyuan; Zhang Qisheng; Chen Lijuan; Wang Fei; Chen Shanci [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 35002 (China); Lu Canzhong [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 35002 (China)], E-mail: czlu@fjirsm.ac.cn

2008-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Method of making silicon on insalator material using oxygen implantation  

DOE Patents (OSTI)

The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

Hite, Larry R. (Dallas, TX); Houston, Ted (Richardson, TX); Matloubian, Mishel (Dallas, TX)

1989-01-01T23:59:59.000Z

382

Theoretical studies of surface reactions on metals and electronic materials. Final report, December 1, 1993--May 15, 1996  

DOE Green Energy (OSTI)

In order to achieve accurate energetics for surface reactions, first-principles calculations are performed using a cluster embedding theory. The projects dealing with hydrocarbon reactions and CO adsorption and dissociation on nickel and iron address fundamental questions related to surface reactivity. The study of the dissociation of methane on a nickel surface containing an iron atom is relevant to the use of methane for synthesis of other hydrocarbons and to the general topic of alkane reactivity. Studies of oxygen and sulfur containing compounds are designed to aid in the interpretation of structural and spectroscopic experiments. Silicon surface studies focus on several questions related to chemical vapor deposition reactions and growth of electronic materials. In collaborative work with experimental groups at N.C. State developing diagnostic techniques for monitoring film growth, influences on second harmonic generation arising from chemical modifications of interfaces are explored. The project involving diamond growth explores factors that influence the bonding of carbon to nickel surfaces and surface reactions on carbon. Studies of defects produced by H atom migration in amorphous silicon are related to the degradation of the photovoltaic properties of this material on continued exposure to light.

Whitten, J.L.

1996-05-01T23:59:59.000Z

383

Progress report on the results of testing advanced conceptual design metal barrier materials under relevant environmental conditions for a tuff repository  

SciTech Connect

This report discusses the performance of candidate metallic materials envisioned for fabricating waste package containers for long-term disposal at a possible geological repository at Yucca Mountain, Nevada. Candidate materials include austenitic iron-base to nickel-base alloy (AISI 304L, AISI 316L, and Alloy 825), high-purity copper (CDA 102), and copper-base alloys (CDA 613 and CDA 715). Possible degradation modes affecting these container materials are identified in the context of anticipated environmental conditions at the repository site. Low-temperature oxidation is the dominant degradation mode over most of the time period of concern (minimum of 300 yr to a maximum of 1000 yr after repository closure), but various forms of aqueous corrosion will occur when water infiltrates into the near-package environment. The results of three years of experimental work in different repository-relevant environments are presented. Much of the work was performed in water taken from Well J-13, located near the repository, and some of the experiments included gamma irradiation of the water or vapor environment. The influence of metallurgical effects on the corrosion and oxidation resistance of the material is reviewed; these effects result from container fabrication, welding, and long-term aging at moderately elevated temperatures in the repository. The report indicates the need for mechanisms to understand the physical/chemical reactions that determine the nature and rate of the different degradation modes, and the subsequent need for models based on these mechanisms for projecting the long-term performance of the container from comparatively short-term laboratory data. 91 refs., 17 figs., 16 tabs.

McCright, R.D.; Halsey, W.G.; Van Konynenburg, R.A.

1987-12-01T23:59:59.000Z

384

Materials characterization of silicon carbide reinforced titanium (Ti/SCS-6) metal matrix composites. Part 1: Tensile and fatigue behavior  

Science Conference Proceedings (OSTI)

Flexural fatigue behavior was investigated on titanium (Ti-15V-3Cr) metal matrix composites reinforced with cross-ply, continuous silicon carbide (SiC) fibers. The titanium composites had an eight-ply (0, 90, +45, {minus}45 deg) symmetric layup. Fatigue life was found to be sensitive to fiber layup sequence. Increasing the test temperature from 24 C to 427 C decreased fatigue life. Interface debonding and matrix and fiber fracture were characteristic of tensile behavior regardless of test temperature. In the tensile fracture process, interface debonding between SiC and the graphite coating and between the graphite coating and the carbon core could occur. A greater amount of coating degradation at 427 C than at 24 C reduced the Ti/SiC interface bonding integrity, which resulted in lower tensile properties at 427 C. During tensile testing, a crack could initiate from the debonded Ti/SiC interface and extend to the debonded interface of the neighboring fiber. The crack tended to propagate through the matrix and the interface. Dimpled fracture was the prime mode of matrix fracture. Interface debonding, matrix cracking, and fiber bridging were identified as the prime modes of fatigue mechanisms. To a lesser extent, fiber fracture was observed during fatigue. However, fiber fracture was believed to occur near the final stage of fatigue failure. In fatigued specimens, facet-type fracture appearance was characteristic of matrix fracture morphology. Theoretical modeling of the fatigue behavior of Ti/SCS-6 composites is presented in Part 2 of this series of articles.

Liaw, P.K. [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Diaz, E.S. [Westinghouse Science and Technology Center, Pittsburgh, PA (United States); Chiang, K.T.; Loh, D.H. [Rockwell International Corp., Canoga Park, CA (United States). Rocketdyne Div.

1995-12-01T23:59:59.000Z

385

High Performance Ceramic Interconnect Material for Solid Oxide Fuel Cells (SOFCs): Ca- and Transition Metal-doped Yttrium Chromite  

Science Conference Proceedings (OSTI)

The effect of transition metal substitution on thermal and electrical properties of Ca-doped yttrium chromite was investigated in relation to use as a ceramic interconnect in high temperature solid oxide fuel cells (SOFCs). 10 at% Co, 4 at% Ni, and 1 at% Cu substitution on B-site of 20 at% Ca-doped yttrium chromite led to a close match of thermal expansion coefficient (TEC) with that of 8 mol% yttria-stabilized zirconia (YSZ), and a single phase Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 remained stable between 25 and 1100 degree C over a wide oxygen partial pressure range. Doping with Cu significantly facilitated densification of yttrium chromite. Ni dopant improved both electrical conductivity and dimensional stability in reducing environments, likely through diminishing the oxygen vacancy formation. Substitution with Co substantially enhanced electrical conductivity in oxidizing atmosphere, which was attributed to an increase in charge carrier density and hopping mobility. Electrical conductivity of Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 at 900 degree C is 57 S/cm in air and 11 S/cm in fuel (pO2=510^-17 atm) environments. Chemical compatibility of doped yttrium chromite with other cell components was verified at the processing temperatures. Based on the chemical and dimensional stability, sinterability, and thermal and electrical properties, Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 is suggested as a promising SOFC ceramic interconnect to potentially overcome technical limitations of conventional acceptor-doped lanthanum chromites.

Yoon, Kyung J.; Stevenson, Jeffry W.; Marina, Olga A.

2011-10-15T23:59:59.000Z

386

Cathode material for lithium batteries  

DOE Patents (OSTI)

A method of manufacture an article of a cathode (positive electrode) material for lithium batteries. The cathode material is a lithium molybdenum composite transition metal oxide material and is prepared by mixing in a solid state an intermediate molybdenum composite transition metal oxide and a lithium source. The mixture is thermally treated to obtain the lithium molybdenum composite transition metal oxide cathode material.

Park, Sang-Ho; Amine, Khalil

2013-07-23T23:59:59.000Z

387

Metal-Air Batteries  

Science Conference Proceedings (OSTI)

Metal-air batteries have much higher specific energies than most currently available primary and rechargeable batteries. Recent advances in electrode materials and electrolytes, as well as new designs on metal-air batteries, have attracted intensive effort in recent years, especially in the development of lithium-air batteries. The general principle in metal-air batteries will be reviewed in this chapter. The materials, preparation methods, and performances of metal-air batteries will be discussed. Two main metal-air batteries, Zn-air and Li-air batteries will be discussed in detail. Other type of metal-air batteries will also be described.

Zhang, Jiguang; Bruce, Peter G.; Zhang, Gregory

2011-08-01T23:59:59.000Z

388

Correlated exciton dynamics in semiconductor nanostructures  

E-Print Network (OSTI)

The absorption and dissipation of energy in semiconductor nanostructures are often determined by excited electron dynamics. In semiconductors, one fundamentally important electronic state is an exciton, an excited electron ...

Wen, Patrick, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

389

Textured Metal Catalysts for Heterogeneous Catalysis ...  

Biomass and Biofuels Advanced Materials Textured Metal Catalysts for Heterogeneous Catalysis Pacific Northwest National Laboratory. Contact ...

390

Synchronization in semiconductor laser rings  

E-Print Network (OSTI)

We examine the dynamics of semiconductor lasers coupled in a ring configuration. The lasers, which have stable output intensity when isolated, behave chaotically when coupled unidirectionally in a closed chain. In this way, we show that neither feedback nor bidirectional coupling is necessary to induce chaotic dynamics at the laser output. We study the synchronization phenomena arising in this particular coupling architecture, and discuss its possible application to chaos-based communications. Next, we extend the study to bidirectional coupling and propose an appropriate technique to optical chaos encryption/decryption in closed chains of mutually coupled semiconductor lasers.

Javier M. Buldu; M. C. Torrent; Jordi Garcia-Ojalvo

2006-10-06T23:59:59.000Z

391

Innovations in Semiconductor Devices for Exascale ...  

Science Conference Proceedings (OSTI)

Innovations in Semiconductor Devices for Exascale Computing. TC Chen IBM Fellow and Vice President of Science and ...

2010-10-05T23:59:59.000Z

392

Economic Impact of Measurement in the Semiconductor ...  

Science Conference Proceedings (OSTI)

... semiconductors are the workhorses that take electric voltage and engender ... the distance between lines of memory (dynamic random access ...

2012-10-09T23:59:59.000Z

393

Data mining solves tough semiconductor manufacturing problems  

Science Conference Proceedings (OSTI)

Keywords: data mining, machine learning, manufacturing optimization, neural networks, pattern recognition, rule induction, self organizing maps, semiconductor yield enhancement

Mike Gardner; Jack Bieker

2000-08-01T23:59:59.000Z

394

Bottoms Up: Better Organic Semiconductors for Printable ...  

Science Conference Proceedings (OSTI)

... A patent from British researchers in 2005 offered a promising compromise: blend the small semiconductor molecules in with the polymer. ...

2012-10-18T23:59:59.000Z

395

Robust Capacity Planning in Semiconductor Manufacturing  

E-Print Network (OSTI)

Oct 3, 2001 ... Abstract: We present a stochastic programming approach to capacity planning under demand uncertainty in semiconductor manufacturing.

396

Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate  

SciTech Connect

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

2006-05-30T23:59:59.000Z

397

Corrosion resistance of metallic solar absorber materials in a range of heat transfer fluids. Final technical report  

SciTech Connect

The work described in this report is intended to provide manufacturers, designers, and installers with reliable corrosion compatibility data, meaningful maintenance schedule, and confidence in durability and performance of solar collector units. The corrosion behavior of Cu alloy 122, Al alloy 1100, mild steel 1010, and a ferritic stainless steel (alloy 444) was determined in a variety of potential solar heat transfer fluids. The fluids included potable waters, water glycol solutions, and four non-aqueous fluids. The test apparatus cycled the temperatures of the fluids through those typical of an operating solar energy collector unit. The 444 stainless steel was the most corrosion resistant material and in uninhibited solutions demonstrated only extremely shallow pits during the 180 day test. The use of inhibited solutions generally prevented pits from forming. Cu alloy 122 showed quite low corrosion rates in uninhibited solutions although the presence of excess solder flux promoted some crevice corrosion. In such solutions, uniform, corrosive attack produced general surface roughening along with a protective surface oxide. The overall corrosion rate of the alloy was generally lower in inhibited glycol solutions although pitting within the crevice region occurred in limited cases. Exposure in the non-aqueous fluids resulted in extremely low corrosion rates with little evidence of localized attack.

Brock, A.J.; Smith, E.F. III

1983-01-01T23:59:59.000Z

398

Trending: Metal Oxo Bonds  

NLE Websites -- All DOE Office Websites (Extended Search)

Trending: Metal Oxo Bonds Trending: Metal Oxo Bonds Trending: Metal Oxo Bonds Print Wednesday, 29 May 2013 00:00 Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide variety of important emergent technologies, including industrial catalysis, biomimetic transformations, and artificial photosynthesis. To address this problem, a research team from four national laboratories, three Department of Energy synchrotron user facilities, and the University of Washington has applied spectroscopic and computational analyses to a number of metal oxides, quantifying trends in metal oxo bonding for groups of metals across the periodic table.

399

New Materials for Spintronics  

SciTech Connect

One of the critical materials needs for the development of spin electronics is diluted magnetic semiconductors (DMS) which retain their ferromagnetism at and above room temperature. Spin polarization in DMS materials leads to the possibility of spin-polarized current injection into nonmagnetic semiconductor heterostructures. Such transport is of critical importance in the development of devices that utilize spin (e.g. spin-LEDs and spin-FETs). New magnetically-doped semiconducting oxides that show promise because of Curie points which exceed room temperature are currently being investigated in our lab and elsewhere. However, the detailed materials properties and mechanism(s) of magnetism in these systems have been elusive. In this talk, I will present recent results from our laboratory focused on the MBE synthesis and properties of these ferromagnetic oxide semiconductors. This work was funded by the PNNL Nanoscience and Technology Initiative, the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Materials Science and Engineering Physics, and the DARPA Spins in Semiconductors (SPINS) Initiative.

Chambers, Scott A.; Yoo, Young K.

2003-10-10T23:59:59.000Z

400

Materials Applications of Photoelectron Emission Microscopy  

SciTech Connect

Photoelectron emission microscopy (PEEM) is a versatile technique that can image a variety of materials including metals, semiconductors and even insulators. Under favorable conditions the most advanced aberration corrected instruments have a spatial resolution approaching 2 nm. Although PEEM cannot compete with transmission or scanning electron microscopies for ultimate resolution, the technique is much more gentle and has the unique advantage of imaging structure as well as electronic and magnetic states on the nanoscale. Since the image contrast is derived from spatial variations in electron photoemission intensity, PEEM is ideal for interrogating both static and dynamic electronic properties of complex nanostructured materials. PEEM can be performed using a variety of photoexcitation sources including synchrotron emission, femtosecond laser pulses and conventional UV lamp emission. Each source has advantages, for example, fs laser excitation enables time-resolved imaging for study of ultrafast dynamics of surface intermediate states while tunable synchrotron sources allow chemically specific excitation. Even more detail can be extracted from energy resolved PEEM. Here, we review the key principles and contrast mechanisms of PEEM and briefly summarize materials applications of PEEM with examples of a thermally-induced structural phase transformation in barium titanate, inter-diffusion between thin metal copper and ruthenium layers, and multiphoton imaging of polystyrene nanoparticles on a silver coated substrate.

Xiong, Gang; Shao, Rui; Peppernick, Samuel J.; Joly, Alan G.; Beck, Kenneth M.; Hess, Wayne P.; Cai, Mingdong; Duchene, J.; Wang, J. Y.; Wei, Wei

2010-12-30T23:59:59.000Z

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Atomic-scale properties of semiconductor heterostructures probed by scanning tunneling microscopy  

SciTech Connect

The engineering of advanced semiconductor heterostructure materials and devices requires a detailed understanding of, and control over, the structure and properties of semiconductor materials and devices at the atomic to nanometer scale. Cross-sectional scanning tunneling microscopy has emerged as a unique and powerful method to characterize structural morphology and electronic properties in semiconductor epitaxial layers and device structures at these length scales. The basic experimental techniques in cross-sectional scanning tunneling microscopy are described, and some representative applications to semiconductor heterostructure characterization drawn from recent investigations in the authors laboratory are discussed. Specifically, they describe some recent studies of InP/InAsP and InAsP/InAsSb heterostructures in which nanoscale compositional clustering has been observed and analyzed.

Yu, E.T.; Zuo, S.L.; Bi, W.G.; Tu, C.W. [Univ. of California, San Diego, La Jolla, CA (United States). Dept. of Electrical and Computer Engineering; Biefeld, R.M.; Allerman, A.A. [Sandia National Labs., Albuquerque, NM (United States)

1998-05-01T23:59:59.000Z

402

Computer-Aided Materials Selection  

Science Conference Proceedings (OSTI)

Table 42   Examples of materials information required during product design...identification Material class (metal, plastic, ceramic, composite) Material subclass Material industry designation Material product form Material condition designation (temper, heat treatment, etc.) Material specification Material alternative names Material component designations (composite/assembly)...

403

Mechanical scriber for semiconductor devices  

DOE Patents (OSTI)

A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

Lin, P.T.

1985-03-05T23:59:59.000Z

404

Mechanical scriber for semiconductor devices  

DOE Patents (OSTI)

A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.

Lin, Peter T. (East Brunswick, NJ)

1985-01-01T23:59:59.000Z

405

Method and making group IIB metal - telluride films and solar cells  

DOE Patents (OSTI)

A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.

Basol, Bulent M. (Redondo Beach, CA); Kapur, Vijay K. (Northridge, CA)

1990-08-21T23:59:59.000Z

406

From semiconductor-semiconductor transition (42 K) to the highest- Tc organic superconductor,. kappa. -(ET) sub 2 Cu(N(CN) sub 2 )Cl ( Tc = 12. 5 K)  

Science Conference Proceedings (OSTI)

The discovery of an organic superconductor with the highest transition temperature (125 K) recorded following the suppression of a semiconductor-semiconductor transition (42 K) is reported. The reported compound is a kappa-phase superconductor, kappa-(ET){sub 2}Cu(N(CN){sub 2})Cl, which is isostructural with the recently prepared ambient-pressure superconductor kappa-(ET){sub 2}Cu(N(CN){sub 2})Br with a transition temperature of 11.5 K that has been previously reported. Band electronic structural calculations show the newly discovered compound to be a two-dimensional metal. 15 refs., 2 figs.

Williams, J.M.; Kini, A.M.; Wang, H.H.; Carlson, K.D.; Geiser, U.; Montgomery, L.K.; Pyrka, G.J.; Watkins, D.M.; Kommers, J.M.; Boryschuk, S.J.; Strieby Crouch, A.V.; Kwok, W.K. (Argonne National Lab., IL (USA)); Schirber, J.E.; Overmyer, D.L. (Sandia National Labs., Albuquerque, NM (USA)); Jung, D.; Whangbo, Myunghwan (North Carolina State Univ., Raleigh (USA))

1990-09-05T23:59:59.000Z

407

Hybrid high-temperature superconductor-semiconductor tunnel diode  

E-Print Network (OSTI)

We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+{\\delta} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal material junction, and similar to spectra obtained in scanning tunneling microscopy. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+{\\delta} combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials and quantum technology applications.

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

2013-01-09T23:59:59.000Z

408

Internal cooling in a semiconductor laser diode  

E-Print Network (OSTI)

AbstractA thermal model of a diode laser structure is developed which includes a bipolar thermoelectric term not included in previous models. It is shown that heterostructure band offsets can be chosen so that there are thermoelectric cooling sources near the active region; this method of cooling is internal to the device itself, as opposed to temperature stabilization schemes which employ an external cooler. A novel laser structure is proposed that is capable of internal cooling in the Ga1 In As Sb1 GaSb material system with = 2 64 m. Index TermsElectrothermal effects, lasers, laser thermal factors, photothermal effects, semiconductor lasers, thermionic emission, thermionic energy conversion, thermoelectric devices, thermoelectric energy conversion, thermoelectricity. Fig. 1. Band structure and thermoelectric heat source distribution for (a) and (b) conventional SCH, and (c) and (d) ICICLE.

K. P. Pipe; R. J. Ram; A. Shakouri

1995-01-01T23:59:59.000Z

409

Building Structural Complexity in Semiconductor Nanocrystals through Chemical Transformations  

Science Conference Proceedings (OSTI)

Methods are presented for synthesizing nanocrystal heterostructures comprised of two semiconductor materials epitaxially attached within individual nanostructures. The chemical transformation of cation exchange, where the cations within the lattice of an ionic nanocrystal are replaced with a different metal ion species, is used to alter the chemical composition at specific regions ofa nanocrystal. Partial cation exchange was performed in cadmium sulfide (CdS) nanorods of well-defined size and shape to examine the spatial organization of materials within the resulting nanocrystal heterostructures. The selectivity for cation exchange to take place at different facets of the nanocrystal plays an important role in determining the resulting morphology of the binary heterostructure. The exchange of copper (I) (Cu+) cations in CdS nanorods occurs preferentially at the ends of the nanorods. Theoretical modeling of epitaxial attachments between different facets of CdS and Cu2S indicate that the selectivity for cation exchange at the ends of the nanorods is a result of the low formation energy of the interfaces produced. During silver (I) (Ag+) cation exchange in CdS nanorods, non-selective nucleation of silver sulfide (Ag2S), followed by partial phase segregation leads to significant changes in the spatial arrangement of CdS and Ag2S regions at the exchange reaction proceeds through the nanocrystal. A well-ordered striped pattern of alternating CdS and Ag2S segments is found at intermediate fractions of exchange. The forces mediating this spontaneous process are a combination of Ostwald ripening to reduce the interfacial area along with a strain-induced repulsive interaction between Ag2S segments. To elucidate why Cu+ and Ag+ cation exchange with CdS nanorods produce different morphologies, models for epitaxial attachments between various facets of CdS with Cu2S or Ag2S lattices were used to calculate interface formation energies. The formation energies indicate the favorability for interface nucleation at different facets of the nanorod and the stability of the interfaces during growth of the secondary material (Cu2S or Ag2S) within the CdS nanocrystal. The physical properties of the CdS-Ag2S and CdS-Cu2S binary nanorods are discussed in terms of the electronic structure of their components and the heterostructure morphology.

Sadtler, Bryce F

2009-05-20T23:59:59.000Z

410

Solar Thermal Electrolytic Production of Metals from Their Oxides  

Science Conference Proceedings (OSTI)

Symposium, Alternative Energy Resources for Metals and Materials Production Symposium. Presentation Title, Solar Thermal Electrolytic Production of Metals...

411

Transport Phenomena in Materials Processing  

Science Conference Proceedings (OSTI)

Jul 1, 1998 ... Print Book: Handbook on Material and Energy Balance Calculations in Metallurgical ... Fundamentals; Molten Metal and Solidification;...

412

PNNL-21407 Dynamic Processes in Biology, Chemistry, and Materials...  

NLE Websites -- All DOE Office Websites (Extended Search)

device CMOS complementary metal-oxide-semiconductor C s spherical aberration CZT CdZnTe DFT density functional theory DOE U.S. Department of Energy dpa displacements...

413

Trending: Metal Oxo Bonds  

NLE Websites -- All DOE Office Websites (Extended Search)

Trending: Metal Oxo Bonds Print Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide variety of important emergent technologies, including industrial catalysis, biomimetic transformations, and artificial photosynthesis. To address this problem, a research team from four national laboratories, three Department of Energy synchrotron user facilities, and the University of Washington has applied spectroscopic and computational analyses to a number of metal oxides, quantifying trends in metal oxo bonding for groups of metals across the periodic table.

414

Trending: Metal Oxo Bonds  

NLE Websites -- All DOE Office Websites (Extended Search)

Trending: Metal Oxo Bonds Print Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide variety of important emergent technologies, including industrial catalysis, biomimetic transformations, and artificial photosynthesis. To address this problem, a research team from four national laboratories, three Department of Energy synchrotron user facilities, and the University of Washington has applied spectroscopic and computational analyses to a number of metal oxides, quantifying trends in metal oxo bonding for groups of metals across the periodic table.

415

Trending: Metal Oxo Bonds  

NLE Websites -- All DOE Office Websites (Extended Search)

Trending: Metal Oxo Bonds Print Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide variety of important emergent technologies, including industrial catalysis, biomimetic transformations, and artificial photosynthesis. To address this problem, a research team from four national laboratories, three Department of Energy synchrotron user facilities, and the University of Washington has applied spectroscopic and computational analyses to a number of metal oxides, quantifying trends in metal oxo bonding for groups of metals across the periodic table.

416

Trending: Metal Oxo Bonds  

NLE Websites -- All DOE Office Websites (Extended Search)

Trending: Metal Oxo Bonds Print Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide variety of important emergent technologies, including industrial catalysis, biomimetic transformations, and artificial photosynthesis. To address this problem, a research team from four national laboratories, three Department of Energy synchrotron user facilities, and the University of Washington has applied spectroscopic and computational analyses to a number of metal oxides, quantifying trends in metal oxo bonding for groups of metals across the periodic table.

417

Sustainability: The Materials Role - TMS  

Science Conference Proceedings (OSTI)

Jul 2, 2008 ... home ... Improvements in processing, in materials substitution, in design to minimize materials usage, and in recycling of metals and polymers...

418

Recipient: The 2005 LMD Light Metals Technical Service Award - TMS  

Science Conference Proceedings (OSTI)

The Minerals, Metals & Materials Society's Light Metals Division's Light Metals Technical Service Award, established in 1995, recognizes an individual who has ...

419

Materials Technology @ TMS  

Science Conference Proceedings (OSTI)

Though well established as materials science and engineering fields, constant improvements are being made to the production of metals, the processing of...

420

Hydrogen Compatibility of Materials  

NLE Websites -- All DOE Office Websites (Extended Search)

materials data related to hydrogen embrittlement - Modeled after existing metals handbooks - Data culled from open literature * Peer-reviewed scientific articles * Public...

Note: This page contains sample records for the topic "materials semiconductor metal" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Materials - Deformation Joining  

NLE Websites -- All DOE Office Websites (Extended Search)

ways to combine advanced materials such as ceramic, intermetallics, cermets, and metal matrix composites (MMCs) together for use in complex vehicle engine components, as well as...

422

Standard Reference Materials  

Science Conference Proceedings (OSTI)

... The Minerals, Metals and Material Society - TMS 2010 February 14-18, 2010 Booth #609 Washington State Convention Center Seattle, WA. ...

2011-03-02T23:59:59.000Z

423

Materials Technology @ TMS  

Science Conference Proceedings (OSTI)

Aug 17, 2010... to the lithium ion-metal oxide batteries currently on the market. ... The team tested how much electricity the material could store after charging...

424

Electrochemistry and Materials Properties  

Science Conference Proceedings (OSTI)

Mar 6, 2013 ... In the frame of the development of a Molten Salt Fast Reactor concept, the corrosion behavior of structural metallic materials in contact with the...

425

Bearing Material Systems  

Science Conference Proceedings (OSTI)

Table 2   Single-metal bearing material systems...Bronze C C C D B 14 2 Electric motor bushings, home appliance bearings,

426

Final Report of a CRADA Between Pacific Northwest National Laboratory and the Ford Motor Company (CRADA No. PNNL/265): Deactivation Mechanisms of Base Metal/Zeolite Urea Selective Catalytic Reduction Materials, and Development of Zeolite-Based Hydrocarbon Adsorber Materials  

SciTech Connect

Reducing NOx emissions and particulate matter (PM) are primary concerns for diesel vehicles required to meet current LEV II and future LEV III emission standards which require 90+% NOx conversion. Currently, urea SCR as the NOx reductant and a Catalyzed Diesel Particulate Filter (CDPF) are being used for emission control system components by Ford Motor Company for 2010 and beyond diesel vehicles. Because the use of this technology for vehicle applications is new, the relative lack of experience makes it especially challenging to satisfy durability requirements. Of particular concern is being able to realistically simulate actual field aging of the catalyst systems under laboratory conditions. This is necessary both as a rapid assessment tool for verifying improved performance and certifiability of new catalyst formulations, and to develop a good understanding of deactivation mechanisms that can be used to develop improved catalyst materials. In addition to NOx and PM, the hydrocarbon (HC) emission standards are expected to become much more stringent during the next few years. Meanwhile, the engine-out HC emissions are expected to increase and/or be more difficult to remove. Since HC can be removed only when the catalyst becomes warm enough for its oxidation, three-way catalyst (TWC) and diesel oxidation catalyst (DOC) formulations often contain proprietary zeolite materials to hold the HC produced during the cold start period until the catalyst reaches its operating temperature (e.g., >200C). Unfortunately, much of trapped HC tends to be released before the catalyst reaches the operating temperature. Among materials effective for trapping HC during the catalyst warm-up period, siliceous zeolites are commonly used because of their high surface area and high stability under typical operating conditions. However, there has been little research on the physical properties of these materials related to the adsorption and release of various hydrocarbon species found in the engine exhaust. For these reasons, automakers and engine manufacturers have difficulty improving their catalytic converters for meeting the stringent HC emission standards. In this collaborative program, scientists and engineers in the Institute for Integrated Catalysis at Pacific Northwest National Laboratory and at Ford Motor Company have investigated laboratory- and engine-aged SCR catalysts, containing mainly base metal zeolites. These studies are leading to a better understanding of various aging factors that impact the long-term performance of SCR catalysts and improve the correlation between laboratory and engine aging, saving experimental time and cost. We have also studied materials effective for the temporary storage of HC species during the cold-start period. In particular, we have examined the adsorption and desorption of various HC species produced during the combustion with different fuels (e.g., gasoline, E85, diesel) over potential HC adsorber materials, and measured the kinetic parameters to update Fords HC adsorption model. Since this CRADA has now been completed, in this final report we will provide brief summaries of most of the work carried out on this CRADA over the last several years.

Gao, Feng; Kwak, Ja Hun; Lee, Jong H.; Tran, Diana N.; Peden, Charles HF; Howden, Ken; Cheng, Yisun; Lupescu, Jason; Cavattaio, Giovanni; Lambert, Christine; McCabe, Robert W.

2013-02-14T23:59:59.000Z

427

Characterization of Thin Films by XAFS: Application to Spintronics Materials  

SciTech Connect

X-ray absorption fine structure (XAFS) has proven very valuable in characterizing thin films. This is illustrated with some examples from the area of diluted magnetic semiconductor (DMS) materials for spintronics applications. A promising route to DMS materials is doping of oxides such as TiO2 and ZnO with magnetic atoms such as Co. These can be grown as epitaxial thin films on various substrates. XAFS is especially valuable for characterizing the dopant atoms. The near edge region is sensitive to the symmetry of the bonding and valence of the dopants, and the extended XAFS can determine the details of the lattice site. XAFS is also valuable for detecting metallic nanoparticles. These can be difficult to detect by other methods, and can give a spurious magnetic signal. The power of XAFS is illustrated by examples from studies on Co doped ZnO films.

Heald, Steve M.; Kaspar, Tiffany C.; Droubay, Timothy; Chambers, Scott A.

2009-10-25T23:59:59.000Z

428

Electrical Transport Through a Single Nanoscale SemiconductorBranch Point  

DOE Green Energy (OSTI)

Semiconductor tetrapods are three dimensional branched nanostructures, representing a new class of materials for electrical conduction. We employ the single electron transistor approach to investigate how charge carriers migrate through single nanoscale branch points of tetrapods. We find that carriers can delocalize across the branches or localize and hop between arms depending on their coupling strength. In addition, we demonstrate a new single-electron transistor operation scheme enabled by the multiple branched arms of a tetrapod: one arm can be used as a sensitive arm-gate to control the electrical transport through the whole system. Electrical transport through nanocrystals, molecules, nanowires and nanotubes display novel quantum phenomena. These can be studied using the single electron transistor approach to successively change the charge state by one, to reveal charging energies, electronic level spacings, and coupling between electronic, vibrational, and spin degrees of freedom. The advent of colloidal synthesis methods that produce branched nanostructures provides a new class of material which can act as conduits for electrical transport in hybrid organic-inorganic electrical devices such as light emitting diodes and solar cells. Already, the incorporation of branched nanostructures has yielded significant improvements in nanorod/polymer solar cells, where the specific pathways for charge migration can have a significant impact on device performance. Progress in this area requires an understanding of how electrons and holes migrate through individual branch points, for instance do charges delocalize across the branches or do they localize and hop between arms. Here we employ the single electron transistor approach to investigate the simplest three dimensional branched nanostructure, the semiconductor tetrapod, which consists of a pyramidal shaped zinc blende-structured ''core'' with four wurzite-structured arms projecting out at the tetrahedral angle. Monodisperse CdTe tetrapods with arms 8 nm in diameter and 150 nm in length were synthesized as previously reported. The tetrapods dispersed in toluene were deposited onto {approx}10 nm thick Si{sub 3}N{sub 4} dielectrics with alignment markers and a back gate (see Supporting Information). A tetrapod spontaneously orients with one arm pointing perpendicularly away from the substrate and three arms projecting down towards the surface. Individual 60 nm-thick Pd electrodes were placed by EBL onto each of the three arms downwards so that there are four terminals (three arms and a back gate) as shown schematically in Fig. 1 top inset. Figure 1 bottom inset shows a typical scanning electron micrograph (SEM) of the devices. The center brighter spot is due to the fourth arm pointing up away from the substrate although its controlled breaking is possible. The separation between the metal electrodes and the tetrapod branch point ranges from 30 to 80 nm in our devices. The devices were loaded into a He{sup 4}-flow cryostat for low-temperature ({approx}5K) electrical measurements.

Cui, Yi; Banin, Uri; Bjork, Mikael T.; Alivisatos, A. Paul

2005-06-09T23:59:59.000Z

429

The Minerals, Metals & Materials Society  

Science Conference Proceedings (OSTI)

Jul 23, 2013 ... Met. Trans. Home ... Concept papers that are deemed of particular value will receive invitations for full proposals. The intent of LM3I is to...

430

Available Technologies: Metallic Carbon Materials  

Berkeley Lab researchers have introduced heptagons and pentagons into the hexagonal, semimetallic, graphite network, and obtained ...

431

Fatigue Phenomena in Metallic Materials  

Science Conference Proceedings (OSTI)

Table 1   Types of variable-amplitude tests and main variables...simulation tests Variable of service load history to be simulated OL, overload...

432

The Minerals, Metals & Materials Society  

Science Conference Proceedings (OSTI)

Wire transferall fees associated with this remittance option are the responsibility of the TMS E-member and will not be deducted from the amount remitted to...

433

High Temperature Metals and Materials  

Science Conference Proceedings (OSTI)

Mar 4, 2013 ... Reduction of TiO2 or TiClx into Liquid Bi in Molten Salts: Yuya Kado1; Sho Maruyama1; Akihiro Kishimoto1; Tetsuya Uda1; 1Kyoto University

434

Fabrication of photonic band gap materials  

DOE Patents (OSTI)

A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microspheres, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microspheres therefrom. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microspheres may be polystyrene microspheres.

Constant, Kristen (Ames, IA); Subramania, Ganapathi S. (Ames, IA); Biswas, Rana (Ames, IA); Ho, Kai-Ming (Ames, IA)

2002-01-15T23:59:59.000Z

435

Fabrication of Photonic band gap Materials  

DOE Patents (OSTI)

A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microsphere, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microsphere there from. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microsphere may be polystyrenemicrosphere.

Constant, Kristen; Subramania, Ganapathi S.; Biswas, Rana; Ho, Kai-Ming

2000-01-05T23:59:59.000Z

436

Materials and Science in Sports: Exhibition - TMS  

Science Conference Proceedings (OSTI)

The Materials and Science in Sports Symposium, sponsored by the Structural Materials Division of The Minerals, Metals & Materials Society (TMS), will be held ...

437

Materials and Science in Sports: Destination Information  

Science Conference Proceedings (OSTI)

The Materials and Science in Sports Symposium, sponsored by the Structural Materials Division of The Minerals, Metals & Materials Society (TMS), will be held ...

438

2000 Electronic Materials Conference: Airline Information  

Science Conference Proceedings (OSTI)

Sponsored by the Electronic Materials Committee of The Minerals, Metals & Materials Society (TMS), the 42nd Electronic Materials Conference (EMC) will be

439

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents (OSTI)

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, Raoul B. (Haifa, IL)

1988-01-01T23:59:59.000Z

440

Bulk Metallic Glasses VIII - Programmaster.org  

Science Conference Proceedings (OSTI)

Aug 2, 2010 ... Sponsorship, The Minerals, Metals and Materials Society .... The Oxidation Behavior of an FeCo-Based Bulk Metallic Glass at 600 - 700C.

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441

About Rare Earth Metals | Ames Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

About Rare Earth Metals About Rare Earth Metals What Are Rare Earths? Ames Laboratory's Materials Preparation Center The Ames Process for Purification of Rare...

442

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application  

DOE Patents (OSTI)

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Hansen, W.L.; Haller, E.E.

1980-09-19T23:59:59.000Z

443

Actinide metal processing  

DOE Patents (OSTI)

A process for converting an actinide metal such as thorium, uranium, or plutonium to an actinide oxide material by admixing the actinide metal in an aqueous medium with a hypochlorite as an oxidizing agent for sufficient time to form the actinide oxide material and recovering the actinide oxide material is described together with a low temperature process for preparing an actinide oxide nitrate such as uranyl nitrate. Additionally, a composition of matter comprising the reaction product of uranium metal and sodium hypochlorite is provided, the reaction product being an essentially insoluble uranium oxide material suitable for disposal or long term storage.

Sauer, N.N.; Watkin, J.G.

1992-03-24T23:59:59.000Z

444

Actinide metal processing  

DOE Patents (OSTI)

This invention is comprised of a process of converting an actinide metal such as thorium, uranium, or plutonium to an actinide oxide material by admixing the actinide metal in an aqueous medium with a hypochlorite as an oxidizing agent for sufficient time to form the actinide oxide material and recovering the actinide oxide material is provided together with a low temperature process of preparing an actinide oxide nitrate such as uranyl nitrate. Additionally, a composition of matter comprising the reaction product of uranium metal and sodium hypochlorite is provided, the reaction product being an essentially insoluble uranium oxide material suitable for disposal or long term storage.

Sauer, N.N.; Watkin, J.G.

1991-04-05T23:59:59.000Z

445

NEWTON's Material Science Archive  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Science Archive: Materials Science Archive: Loading Most Recent Materials Science Questions: Hydrogen Compounds and Heat Conduction Weaving Carbon Nanotubes Metal as Electrical Conductor, Not Thermal Steel Changes with Age PETE, Ultraviolet Light, Benefits Strength of Yarn by Spinning Each Substance Unique Density Alloy versus Constituent Density Knowing When Material is Melted Crystalline Metal Versus Metallic Glass and Conduction Super Glue, Surgery, and Skin Silica Gel Teflon Non-Stick Property Salt Crystal Formation Lubricating Rubber Bands and Elasticity Materials for Venus Probe Crystalline Solids and Lowest Energy Sodium Polycarbonate and Salt Water Early Adhesives Surface Energy and Temperature Separating Polypropylene, Polyester, and Nylon Factors Effecting Polymer Flexibility

446

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2012-08-07T23:59:59.000Z

447

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2011-10-11T23:59:59.000Z

448

Power Electronics in the Semiconductor Fabrication Industry  

Science Conference Proceedings (OSTI)

This report provides utility marketing and account executives and engineering staff with fundamental information about the use of power electronics systems in semiconductor fabrication equipment. It details the power electronics systems used in typical semiconductor production equipment as well as current topology and system compatibility issues. Finally, the report outlines how power electronics will serve future advances in the semiconductor industry and how utilities can help the industry make their e...

1999-03-10T23:59:59.000Z

449

Wide Bandgap Semiconductors: Pursuing the Promise  

NLE Websites -- All DOE Office Websites (Extended Search)

the size of an automotive cooling system by 60% or even eliminate the secondary liquid cooling system. 2 Military: WBG semiconductors have great potential as an enabling...

450

Climate VISION: Private Sector Initiatives: Semiconductors: Work...  

Office of Scientific and Technical Information (OSTI)

Work Plans The Semiconductor Industry Association has finalized its work plan with the collaboration of EPA. The plan describes actions the industry intends to take to achieve its...

451

Low Energy Ion Implantationin Semiconductor Manufacturing | U...  

Office of Science (SC) Website

Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Spinoff Applications SBIRSTTR...

452

Low Energy Ion Implantationin Semiconductor Manufacturing | U...  

Office of Science (SC) Website

Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Spinoff Applications Spinoff...

453

Stangl Semiconductor Equipment AG | Open Energy Information  

Open Energy Info (EERE)

Solar Product German manufacturer of wet chemistry systems for processing silicon and thin-film solar cells. References Stangl Semiconductor Equipment AG1 LinkedIn...

454

Characterization of Hydrogen Complex Formation in III-V Semiconductors  

DOE Green Energy (OSTI)

Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55?m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

Williams, Michael D.

2006-09-28T23:59:59.000Z

455

Photoelectrochemical Hydrogen Production Using New Combinatorial Chemistry Derived Materials  

DOE Green Energy (OSTI)

Solar photoelectrochemical water-splitting has long been viewed as one of the holy grails of chemistry because of its potential impact as a clean, renewable method of fuel production. Several known photocatalytic semiconductors can be used; however, the fundamental mechanisms of the process remain poorly understood and no known material has the required properties for cost effective hydrogen production. In order to investigate morphological and compositional variations in metal oxides as they relate to opto-electrochemical properties, we have employed a combinatorial methodology using automated, high-throughput, electrochemical synthesis and screening together with conventional solid-state methods. This report discusses a number of novel, high-throughput instruments developed during this project for the expeditious discovery of improved materials for photoelectrochemical hydrogen production. Also described within this report are results from a variety of materials (primarily tungsten oxide, zinc oxide, molybdenum oxide, copper oxide and titanium dioxid