Sample records for magnetic thin-film nanostructures

  1. Magnetic/metallic thin films and nanostructures

    E-Print Network [OSTI]

    Lewis, Robert Michael

    examples. During the past decade applications of nano-scale magnetic devices to data storage have hadMagnetic/metallic thin films and nanostructures The College of William and MarY;'l Virginia http://www.as.wm.cdu/Faculty/Lukaszcw.html It is widely believed that revolutionary progress can be made as materials and devices are developed to operate

  2. Thin film superconductor magnetic bearings

    DOE Patents [OSTI]

    Weinberger, Bernard R. (Avon, CT)

    1995-12-26T23:59:59.000Z

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  3. Controlled nanostructuration of polycrystalline tungsten thin films

    SciTech Connect (OSTI)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l'Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d'Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07T23:59:59.000Z

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  4. Two-color Laser Desorption of Nanostructured MgO Thin Films....

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two-color Laser Desorption of Nanostructured MgO Thin Films. Two-color Laser Desorption of Nanostructured MgO Thin Films. Abstract: Neutral magnesium atom emission from...

  5. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOE Patents [OSTI]

    Miller, Joel S. (Salt Lake City, UT); Pokhodnya, Kostyantyn I. (Salt Lake City, UT)

    2003-12-09T23:59:59.000Z

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  6. Nanostructured thin films for solid oxide fuel cells 

    E-Print Network [OSTI]

    Yoon, Jongsik

    2009-05-15T23:59:59.000Z

    The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes...

  7. Ion Beam Deposition of Thin Films: Growth Processes and Nanostructure Formation

    SciTech Connect (OSTI)

    Hofsaess, Hans C. [II. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund-Platz 1, D-37077 Goettingen (Germany)

    2004-12-01T23:59:59.000Z

    Ion beam deposition is a process far from thermodynamic equilibrium and is in particular suited to grow metastable thin films with diamond-like properties, such as tetrahedral amorphous carbon (ta-C) and cubic boron nitride (c-BN). In this contribution the atomistic description of the deposition and growth processes are reviewed and compared to experimental results, obtained from mass selected ion beam deposition. The focus will be set to the nucleation and growth processes of boron nitride as a model system for ion based thin film formation. Furthermore, recent examples for nanostructure formation in ion deposited compound thin films will be presented. Ion beam deposited metal-carbon nano-composite thin films exhibit a variety of different morphologies such as rather homogeneous nanocluster distributions embedded in an a-C matrix, but also the self-organized formation of nanoscale multilayer structures.

  8. Time-Resolved Magnetic Flux and AC-Current Distributions in Superconducting YBCO Thin Films and

    E-Print Network [OSTI]

    Shaw, Leah B.

    Time-Resolved Magnetic Flux and AC-Current Distributions in Superconducting YBCO Thin Films magnetic field. We study the interaction behavior of YBCO thin films in an ac transport current and a dc the calibrated field profiles. The current density evolution in YBCO thin films is studied by TRMOI as a function

  9. Singular Limits for Thin Film Superconductors in Strong Magnetic Fields - Maan Field Model for Thin Films

    E-Print Network [OSTI]

    Stan Alama; Lia Bronsard; Bernardo Galvão-Sousa

    2012-09-17T23:59:59.000Z

    We consider singular limits of the three-dimensional Ginzburg-Landau functional for a superconductor with thin-film geometry, in a constant external magnetic field. The superconducting domain has characteristic thickness on the scale $\\eps>0$, and we consider the simultaneous limit as the thickness $\\eps\\rightarrow 0$ and the Ginzburg-Landau parameter $\\kappa\\rightarrow\\infty$. We assume that the applied field is strong (on the order of $\\eps^{-1}$ in magnitude) in its components tangential to the film domain, and of order $\\log\\kappa$ in its dependence on $\\kappa$. We prove that the Ginzburg-Landau energy $\\Gamma$-converges to an energy associated with a two-obstacle problem, posed on the planar domain which supports the thin film. The same limit is obtained regardless of the relationship between $\\eps$ and $\\kappa$ in the limit. Two illustrative examples are presented, each of which demonstrating how the curvature of the film can induce the presence of both (positively oriented) vortices and (negatively oriented) antivortices coexisting in a global minimizer of the energy.

  10. Synthesis and Characterization of Functional Nanostructured Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Chow, Lee

    and development of alternative energy technologies, such as low cost flat-panel solar cells thin film devices and structural requirements of their applications in gas sensors and solar cells. The rapid photothermalV) and GaN (21eV), is of interest for various high tech applications, such as optical devices (1), solar

  11. Control of magnetization reversal in oriented strontium ferrite thin films

    SciTech Connect (OSTI)

    Roy, Debangsu, E-mail: debangsu@physics.iisc.ernet.in; Anil Kumar, P. S. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India)

    2014-02-21T23:59:59.000Z

    Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al{sub 2}O{sub 3}(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

  12. Fabrication and Characterization of Spinel Magnetic Nanoparticle Thin Film Transmission Lines

    E-Print Network [OSTI]

    Papapolymerou, Ioannis "John"

    - Munich 2003 1307 #12;2 the glass slide. By altemating from a solution of amine-coated nanoparticles1 Fabrication and Characterization of Spinel Magnetic Nanoparticle Thin Film Transmission Lines-Spinel magnetic nanoparticle thin films were fabricated on high resistivity silicon substrates. TRL (through

  13. Synthesis, structure, and magnetic properties of -Co nanocrystalline thin films and annealing effects

    E-Print Network [OSTI]

    Spinu, Leonard

    Synthesis, structure, and magnetic properties of -Co nanocrystalline thin films and annealing interaction or local interparticle connections. The saturation magnetization and coercivity substantially by reduction of cobalt chlo- ride with lithium triethyl borohydride superhydride . The -Co had the complex

  14. Effects of Ag underlayers on the microstructure and magnetic properties of epitaxial FePt thin films

    E-Print Network [OSTI]

    Laughlin, David E.

    in the in situ ordering of the FePt thin film at reduced temperatures. The microstructural and magneticPt thin films have drawn considerable attention as a potential high-density magnetic recording material.1. Because the 111 plane is the FePt close-packed plane, the FePt thin film deposited directly onto

  15. Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures

    SciTech Connect (OSTI)

    Akhter, Perveen [Department of Physics, University at Albany-SUNY, Albany, New York 12222 (United States); Huang, Mengbing, E-mail: mhuang@albany.edu; Kadakia, Nirag; Spratt, William; Malladi, Girish; Bakhru, Hassarum [SUNY College of Nanoscale Science and Engineering, Albany, New York 12203 (United States)

    2014-09-21T23:59:59.000Z

    This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to a dose of 10{sup 17}/cm{sup 2}, and some of them received an additional argon ion implant to a dose of 5?×?10{sup 15} /cm{sup 2} at an energy between 30 and 300?keV. Compared to the case with a single H implant, the processing involved both H and Ar implants and post-implantation annealing has created a much higher degree of surface texturing, leading to a more dramatic reduction of light reflection from polycrystalline Si films over a broadband range between 300 and 1200?nm, e.g., optical reflection from the air/Si interface in the AM1.5 sunlight condition decreasing from ?30% with an untextured surface to below 5% for a highly textured surface after post-implantation annealing at 1000?°C. Formation of Ag nanostructures on these ion beam processed surfaces further reduces light reflection, and surface texturing is expected to have the benefit of diminishing light absorption losses within large-size (>100?nm) Ag nanoparticles, yielding an increased light trapping efficiency within Si as opposed to the case with Ag nanostructures on a smooth surface. A discussion of the effects of surface textures and Ag nanoparticles on light trapping within Si thin films is also presented with the aid of computer simulations.

  16. High-field magnets using high-critical-temperature superconducting thin films

    DOE Patents [OSTI]

    Mitlitsky, Fred (Livermore, CA); Hoard, Ronald W. (Livermore, CA)

    1994-01-01T23:59:59.000Z

    High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

  17. High-field magnets using high-critical-temperature superconducting thin films

    DOE Patents [OSTI]

    Mitlitsky, F.; Hoard, R.W.

    1994-05-10T23:59:59.000Z

    High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

  18. Properties of thin film europium oxide by x-ray magnetic circular dichroism Johnathon Holroyda)

    E-Print Network [OSTI]

    Idzerda, Yves

    Properties of thin film europium oxide by x-ray magnetic circular dichroism Johnathon Holroyda Institute of Physics. DOI: 10.1063/1.1688653 I. INTRODUCTION Europium oxide is optically transparent

  19. Structural, magnetic, and optical properties of orthoferrite thin films

    E-Print Network [OSTI]

    Supplee, William Wagner

    2007-01-01T23:59:59.000Z

    Pulsed laser deposition was used to create thin films of Ce-Fe-O and Y-Fe-O systems. Deposition temperature and ambient oxygen pressure were varied systematically between samples to determine which deposition conditions ...

  20. Phase-field simulation of strain-induced domain switching in magnetic thin films

    E-Print Network [OSTI]

    Chen, Long-Qing

    Phase-field simulation of strain-induced domain switching in magnetic thin films Jia-Mian Hu, G of the Bloch point in a magnetic film with strong uniaxial magnetic anisotropy Low Temp. Phys. 37, 690 (2011) Evolution of magnetic bubble domains in manganite films Appl. Phys. Lett. 99, 042503 (2011) 360° domain wall

  1. Effect of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films

    SciTech Connect (OSTI)

    Nongjai, R.; Khan, S.; Ahmad, H.; Khan, I. [Department of Applied Physics, Zakir Hussain College of Engineering and Technology, A.M.U., Aligarh (India); Asokan, K. [Material Science Division, Inter University Accelerator Centre, New Delhi (India)

    2013-06-03T23:59:59.000Z

    We present the influence of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films. Thin films of Co ferrite were deposited by rf sputtering on Si (100) substrate and characterized by X - Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Vibrating Sample Magnetometer (VSM). The XRD patterns showed the formation of crystalline single phase of the films. The particle size and surface roughness of the films were strongly influence by gas pressure. Hysteresis loops measured at room temperature showed the enhancement of magnetic properties with the increase of gas pressure which is attributed to the decrease of particle size.

  2. Vertically Aligned Nanocomposite Thin Films 

    E-Print Network [OSTI]

    Bi, Zhenxing

    2012-07-16T23:59:59.000Z

    microstructure is a brand new architecture in thin films and an exciting approach that promises tunable material functionalities as well as novel nanostructures....

  3. Electric control of magnetization relaxation in thin film magnetic insulators.

    SciTech Connect (OSTI)

    Wang, Z.; Sun, Y.; Song, Y-Y.; Wu, M.; Schultheiss, H.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Colorado State Univ.)

    2011-10-01T23:59:59.000Z

    Control of magnetization relaxation in magnetic insulators via interfacial spin scattering is demonstrated. The experiments use nanometer-thick yttrium iron garnet (YIG)/Pt layered structures, with the Pt layer biased by an electric voltage. The bias voltage produces a spin current across the Pt thickness. As this current scatters off the YIG surface, it exerts a torque on the YIG surface spins. This torque can reduce or enhance the damping and thereby decrease or increase the ferromagnetic resonance linewidth of the YIG film, depending on the field/current configuration.

  4. Comparative study of the mechanical properties of nanostructured thin films on stretchable substrates

    SciTech Connect (OSTI)

    Djaziri, S. [Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Renault, P.-O.; Le Bourhis, E.; Goudeau, Ph., E-mail: Philippe.goudeau@univ-poitiers.fr [Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Faurie, D. [LSPM, (UPR 3407 CNRS), Université Paris 13, Institut Galilée, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Geandier, G. [Institut Jean Lamour (UMR 3079 CNRS), Université de Lorraine, Parc de Saurupt, CS 50840, 54011 NANCY Cedex (France); Mocuta, C.; Thiaudière, D. [Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France)

    2014-09-07T23:59:59.000Z

    Comparative studies of the mechanical behavior between copper, tungsten, and W/Cu nanocomposite based on copper dispersoïd thin films were performed under in-situ controlled tensile equi-biaxial loadings using both synchrotron X-ray diffraction and digital image correlation techniques. The films first deform elastically with the lattice strain equal to the true strain given by digital image correlation measurements. The Cu single thin film intrinsic elastic limit of 0.27% is determined below the apparent elastic limit of W and W/Cu nanocomposite thin films, 0.30% and 0.49%, respectively. This difference is found to be driven by the existence of as-deposited residual stresses. Above the elastic limit on the lattice strain-true strain curves, we discriminate two different behaviors presumably footprints of plasticity and fracture. The Cu thin film shows a large transition domain (0.60% true strain range) to a plateau with a smooth evolution of the curve which is associated to peak broadening. In contrast, W and W/Cu nanocomposite thin films show a less smooth and reduced transition domain (0.30% true strain range) to a plateau with no peak broadening. These observations indicate that copper thin film shows some ductility while tungsten/copper nanocomposites thin films are brittle. Fracture resistance of W/Cu nanocomposite thin film is improved thanks to the high compressive residual stress and the elimination of the metastable ?-W phase.

  5. Enhanced magnetic and electrical properties in amorphous Ge:Mn thin films by non-magnetic codoping

    SciTech Connect (OSTI)

    Yin Wenjing; Kell, Copeland D.; Duska, Chris; Lu Jiwei; Floro, Jerrold A. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); He Li; Hull, Robert [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Dolph, Melissa C. [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Wolf, Stuart A. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States)

    2012-02-01T23:59:59.000Z

    Amorphous Ge{sub 1-x}Mn{sub x} thin films have been prepared by co-depositing Ge and Mn on SiO{sub 2}/Si using an ultrahigh vacuum molecular beam epitaxy system. Across a range of growth temperatures and Mn concentrations (2.8 at. %, 10.9 at. %, and 21.3 at. %), we achieved enhanced magnetic and electrical properties with non-magnetic codopants dispersed in the films. Self-assembled Mn-rich amorphous nanostructures were observed in the amorphous Ge matrix, either as isolated nanoclusters or as nanocolumns, depending on Mn concentration. The ferromagnetic saturation moments were found to increase with Mn concentration and reached a maximum of 0.7 {mu}{sub B}/Mn in the as-grown samples. Two magnetic transition temperatures around 15 K and 200 K were observed in these amorphous MBE-grown samples. Coercivity is considered within the context of local magnetic anisotropy. The anomalous Hall effect confirmed a strong correlation between the magnetization and transport properties, indicating that global ferromagnetic coupling was carrier-mediated rather than through direct exchange. In addition, negative magnetoresistance was detected from 5 K to room temperature.

  6. Fabrication and Characterization of Nano-Sized Magnetic Structures and Their Flux-Pinning Effects on Superconducting Thin Films

    E-Print Network [OSTI]

    Lee, Han Gil

    2011-02-22T23:59:59.000Z

    This dissertation describes experimental studies of how a spatially alternating magnetic field can effectively pin the magnetic flux in a superconducting thin film (Pb 82 Bi18), thereby enhancing the superconductivity. The spatially alternating...

  7. Microstructure and Magnetic Properties of PrMnO{sub 3} Bulk and Thin Film

    SciTech Connect (OSTI)

    Lim, K. P.; Halim, S. A.; Chen, S. K.; Ng, S. W.; Wong, J. K.; Gan, H. M. Albert [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Woon, H. S. [College of Engineering, Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, 43000 Kajang, Selangor (Malaysia)

    2011-03-30T23:59:59.000Z

    Perovskite PrMnO{sub 3}(PMO) had been prepared in bulk by solid state reaction and thin films on corning glass, fused silica and MgO (100) glass substrate by pulsed laser deposition technique. SEM micrographs show that grains with size 2{approx}3 {mu}m is observed in bulk PMO while thin films PMO show strongly connected grain structure with particle size that not larger than 100 nm. X-ray diffraction analysis shows that all samples are in single phase with orthorhombic crystal structure. Bulk PMO sample had lattice strain of 0.134% which is the lowest value among others. However, larger lattice strain was observed in thin film samples due to lattice mismatch between film-substrate and caused the MnO{sub 6} to deform. All samples shown paramagnetic or antiferromagnetic behavior, enhancement in magnetization value occurred for all PMO grew as film. We believe that larger lattice strain favor the grain growth of PMO towards more order phase. In summary, formation of structure and microstructure of thin film PMO depends on type of substrate used and it affect the magnetic property.

  8. Structural controlled magnetic anisotropy in Heusler L1{sub 0}-MnGa epitaxial thin films

    SciTech Connect (OSTI)

    Wang Kangkang; Lu Erdong; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Knepper, Jacob W.; Yang Fengyuan [Department of Physics, Ohio State University, 191 Woodruff Ave., Columbus, Ohio 43210 (United States)

    2011-04-18T23:59:59.000Z

    Ferromagnetic L1{sub 0}-MnGa thin films have been epitaxially grown on GaN, sapphire, and MgO substrates using molecular beam epitaxy. Using diffraction techniques, the epitaxial relationships are determined. It is found that the crystalline orientation of the films differ due to the influence of the substrate. By comparing the magnetic anisotropy to the structural properties, a clear correlation could be established indicating that the in-plane and out-of-plane anisotropy is directly determined by the crystal orientation of the film and could be controlled via selection of the substrates. This result could be helpful in tailoring magnetic anisotropy in thin films for spintronic applications.

  9. Magnetism of Complex Oxide Thin Films and Heterostructures

    E-Print Network [OSTI]

    Iwata, Jodi

    2012-01-01T23:59:59.000Z

    Introduction to Frustrated Magnetism, edited by C. Lacroix,Stöhr and H.C. Siegmann, in Magnetism: From Fundamentals to18] J. B. Goodenough, in Magnetism and the Chemical Bond, (

  10. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15T23:59:59.000Z

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  11. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

    2008-11-25T23:59:59.000Z

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  12. Thin film limits for Ginzburg--Landau with strong applied magnetic fields

    E-Print Network [OSTI]

    Stan Alama; Lia Bronsard; Bernardo Galvão-Sousa

    2009-11-06T23:59:59.000Z

    In this work, we study thin-film limits of the full three-dimensional Ginzburg-Landau model for a superconductor in an applied magnetic field oriented obliquely to the film surface. We obtain Gamma-convergence results in several regimes, determined by the asymptotic ratio between the magnitude of the parallel applied magnetic field and the thickness of the film. Depending on the regime, we show that there may be a decrease in the density of Cooper pairs. We also show that in the case of variable thickness of the film, its geometry will affect the effective applied magnetic field, thus influencing the position of vortices.

  13. Many-body Interactions in Magnetic Films and Nanostructures

    SciTech Connect (OSTI)

    Stephen D. Kevan

    2012-12-12T23:59:59.000Z

    We describe results supported by DOE grant DE-FG02-04ER46158, which focused on magnetic interaction at surfaces, in thin films, and in metallic nanostructures. We report on three general topics: 1) The Rashba spin splitting at magnetic surfaces of rare earth metals, 2) magnetic nanowires self-assembled on stepped tungsten single crystals, and 3) magnetic interaction in graphene films doped with hydrogen atoms.

  14. Electric control of magnetization relaxation in thin film ferromagnetic insulators.

    SciTech Connect (OSTI)

    Wang, Z.; Sun, Y.; Song, Y-Y.; Wu, M.; Schultheib, H.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Colorado State Univ.)

    2011-01-01T23:59:59.000Z

    Control of magnetization relaxation in magnetic insulators via interfacial spin scattering is demonstrated. The experiments use nanometer-thick yttrium iron garnet (YIG)/Pt layered structures, with the Pt layer biased by an electric voltage. The bias voltage produces a spin current across the Pt thickness. As this current scatters off the YIG surface, it exerts a torque on the YIG surface spins. This torque can reduce or enhance the damping and thereby decrease or increase the ferromagnetic resonance linewidth of the YIG film, depending on the field/current configuration.

  15. Nanostructural Effect of AlPO4-Nanoparticle Coating on the Cycle-Life Performance in LiCoO2 Thin Films

    E-Print Network [OSTI]

    Park, Byungwoo

    Nanostructural Effect of AlPO4-Nanoparticle Coating on the Cycle-Life Performance in LiCoO2 Thin-life perfor- mance of the coated cathode depended on the nanostructure of the AlPO4-nanoparticle-coating layer. The LiCoO2 thin-film cathode coated with amorphous nanoparticles and annealed at 400°C showed the best

  16. Nanostructured nickel doped ?-V{sub 2}O{sub 5} thin films for supercapacitor applications

    SciTech Connect (OSTI)

    Jeyalakshmi, K. [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India); Vijayakumar, S. [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India); Purushothaman, K.K. [Department of Physics, TRP Engineering College, Trichy (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India)

    2013-07-15T23:59:59.000Z

    Graphical abstract: - Highlights: • Nanorod with pores has been observed for 5 wt.% nickel doped ?-V{sub 2}O{sub 5} thin films. • Film with 5 wt.% of nickel exhibits a specific capacitance of 417 F g{sup ?1}. • These films exhibit high energy density. • The charge transfer resistance is 103 ?. - Abstract: Interesting thin film electrodes of nickel doped vanadium pentoxide with different levels of doping (2.5–10 wt.%) are prepared on FTO and glass substrate at 300 °C using sol–gel spin coating method. The structural and morphological studies are made to understand the nature of the surface of the thin films. The electrochemical characteristics have been investigated through cyclic voltammetry and ac impedance spectroscopy measurements. The doping of nickel with ?-V{sub 2}O{sub 5} has led to enhanced intercalation and deintercalation of ions. ?-V{sub 2}O{sub 5} films with 5 wt.% of Ni exhibit the maximum specific capacitance of 417 F/g at a scan rate of 5 mV/s, with a good cyclic stability making it a promising candidate for supercapacitor application.

  17. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jamer, M. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Sterbinsky, G. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Assaf, B. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Arena, D. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Heiman, D. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics

    2014-12-07T23:59:59.000Z

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value. (auth)

  18. Reversal mechanisms of coupled bi-component magnetic nanostructures G. Shimon,1,2

    E-Print Network [OSTI]

    Adeyeye, Adekunle

    in applications such as high density information storage,1­3 domain wall (DW) logic,4,5 and memory devices.6Reversal mechanisms of coupled bi-component magnetic nanostructures G. Shimon,1,2 A. O. Adeyeye,1 Institute of Physics. [http://dx.doi.org/10.1063/1.4747446] Thin film ferromagnetic nanostructures have been

  19. Solid-to-solid phase transformations of nanostructured selenium-tin thin films induced by thermal annealing in oxygen atmosphere

    SciTech Connect (OSTI)

    Serra, A. [Physics Applied to Material Science interdepartmental Laboratory (PAMS-Lab) - Dipartimento di Beni Culturali - Università del Salento - Lecce (Italy); Rossi, M. [Dipartimento Scienze di Base ed Applicate all'Ingegneria, and CNIS - Sapienza Università di Roma, Roma (Italy); Buccolieri, A.; Manno, D. [Physics Applied to Material Science interdepartmental Laboratory (PAMS-Lab) - Dipartimento di Scienze e Tecnologie Biologiche ed Ambientali - Università del Salento - Lecce (Italy)

    2014-06-19T23:59:59.000Z

    The structural and morphological evolution of nanostructured thin films obtained from thermal evaporation of polycrystalline Sn-Se starting charge as a function of the subsequent annealing temperature in an oxygen flow has been analysed. High-resolution transmission electron microscopy, small area electron diffraction, digital image processing, x-ray diffraction and Raman spectroscopy have been employed in order to investigate the structure and the morphology of the obtained films. The results evidenced, in the temperature range from RT to 500°C, the transition of the material from a homogeneous mixture of SnSe and SnSe{sub 2} nanocrystals, towards a homogeneous mixture of SnO{sub 2} and SeO{sub 2} nanocrystals, with an intermediate stage in which only SnSe{sub 2} nanocrystals are present.

  20. Effect of post-deposition treatment on energy conversion efficiency of nanostructured CdS/Cu{sub 2}S thin films

    SciTech Connect (OSTI)

    Taur, Vidya S.; Joshi, Rajesh A. [Department of Physics, S. B. E. S. College of Science, Aurangabad 431002 MS (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India)

    2013-02-05T23:59:59.000Z

    In the present manuscript we report about synthesis of nanostructured CdS/Cu{sub 2}S thin films by economically viable soft chemical route and effect of post deposition treatments such as annealing in air and swift heavy ion irradiation on solar energy conversion efficiency of the heterojunction device. These as grown, annealed and irradiated thin films are characterized for structural, morphological, optical and I-V properties. X-ray diffraction pattern (XRD) represents structural as well as crystallite modifications, atomic force microscopy (AFM) shows improvement in surface appearance of the materials. The solar energy conversion efficiency calculated from I-V exhibited increase in conversion efficiency i. e. 0.09, 0.24 and 0.48 % for as grown, annealed and SHI irradiated thin films.

  1. Investigation of the magnetic properties of insulating thin films using the longitudinal spin Seebeck effect

    SciTech Connect (OSTI)

    Kehlberger, A., E-mail: kehlberg@uni-mainz.de; Jakob, G.; Kläui, M. [Institute of Physics, University of Mainz, 55099 Mainz (Germany); Onbasli, M. C.; Kim, D. H.; Ross, C. A. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-05-07T23:59:59.000Z

    The longitudinal spin Seebeck effect is used as a detector for the magnetic properties and switching characteristics of magnetic thin insulating films. We use a 300 nm and a 20?nm thick Yttrium Iron Garnet (YIG, Y{sub 3}Fe{sub 5}O{sub 12}) film prepared by pulsed laser deposition and afterwards coated by platinum for the detection of the thermally excited magnons by the inverse spin Hall effect. The inverse spin Hall signals reveal a magnetic uniaxial anisotropy along the direction of the platinum stripe in the thicker film. For the thin film we find a more isotropic behavior, which is complementarily observed using the magnetoresistance occurring at the platinum/YIG interface. We explain our results on the basis of x-ray diffraction data, which reveal a miscut of the substrate and film surface and an expansion of the YIG lattice. Both findings favor a growth-induced magnetic anisotropy that we observe.

  2. Electron theory of perpendicular magnetic anisotropy of Co-ferrite thin films

    SciTech Connect (OSTI)

    Inoue, Jun-ichiro; Yanagihara, Hideto; Kita, Eiji [Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573 (Japan)] [Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573 (Japan); Niizeki, Tomohiko [Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573 (Japan) [Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573 (Japan); AIMR, Tohoku University, Sendai 980-8577 (Japan); Itoh, Hiroyoshi [Department of Pure and Applied Physics, Kansai University, Suita 564-8680 (Japan)] [Department of Pure and Applied Physics, Kansai University, Suita 564-8680 (Japan)

    2014-02-15T23:59:59.000Z

    We develop an electron theory for the t{sub 2g} electrons of Co{sup 2+} ions to clarify the perpendicular magnetic anisotropy (PMA) mechanism of Co-ferrite thin films by considering the spin-orbit interaction (SOI) and crystal-field (CF) potentials induced by the local symmetry around the Co ions and the global tetragonal symmetry of the film. Uniaxial and in-plane MA constants K{sub u} and K{sub 1} at 0 K, respectively, are calculated for various values of SOI and CF. We show that reasonable parameter values explain the observed PMA and that the orbital moment for the in-plane magnetization reduces to nearly half of that of the out-of-plane magnetization.

  3. Impact of the Meissner effect on magnetic micro traps for neutral atoms near superconducting thin films

    E-Print Network [OSTI]

    D. Cano; B. Kasch; H. Hattermann; D. Koelle; R. Kleiner; C. Zimmermann; J. Fortágh

    2008-08-21T23:59:59.000Z

    We theoretically evaluate changes in the magnetic potential arising from the magnetic field near superconducting thin films. An example of an atom chip based on a three-wire configuration has been simulated in the superconducting and the normal conducting state. Inhomogeneous current densities within the superconducting wires were calculated using an energy-minimization routine based on the London theory. The Meissner effect causes changes to both trap position and oscillation frequencies at short distances from the superconducting surface. Superconducting wires produce much shallower micro traps than normal conducting wires. The results presented in this paper demonstrate the importance of taking the Meissner effect into account when designing and carrying out experiments on magnetically trapped neutral atoms near superconducting surfaces.

  4. Structural and magnetic properties of NiZn and Zn ferrite thin films obtained by laser ablation deposition

    E-Print Network [OSTI]

    McHenry, Michael E.

    Structural and magnetic properties of NiZn and Zn ferrite thin films obtained by laser ablation ferrite structures. Our investigations were performed on NiZn and Zn ferrite films deposited on silicon of the blocking temperature in both NiZn and Zn ferrite systems. © 2005 American Institute of Physics. DOI: 10

  5. Ultrafast Magnetization Dynamics of SrRuO3 Thin Films

    SciTech Connect (OSTI)

    Langner, Matthew C

    2009-05-19T23:59:59.000Z

    Itinerant ferromagnet SrRuO3 has drawn interest from physicists due to its unusual transport and magnetic properties as well as from engineers due to its low resistivity and good lattice-matching to other oxide materials. The exact electronic structure remains a mystery, as well as details of the interactions between magnetic and electron transport properties. This thesis describes the use of time-resolved magneto-optical Kerr spectroscopy to study the ferromagnetic resonance of SrRuO3 thin films, where the ferromagnetic resonance is initiated by a sudden change in the easy axis direction in response to a pump pulse. The rotation of the easy axis is induced by laser heating, taking advantage of a temperature-dependent easy axis direction in SrRuO3 thin films. By measuring the change in temperature of the magnetic system in response to the laser pulse, we find that the specific heat is dominated by magnons up to unusually high temperature, ~;;100 K, and thermal diffusion is limited by a boundary resistance between the film and the substrate that is not consistent with standard phonon reflection and scattering models. We observe a high FMR frequency, 250 GHz, and large Gilbert damping parameter, alpha ~;; 1, consistent with strong spin-orbit coupling. We observe a time-dependent change in the easy axis direction on a ps time-scale, and we find that parameters associated with the change in easy axis, as well as the damping parameter, have a non-monotonic temperature dependence similar to that observed in anomalous Hall measurements.

  6. Nanostructured magnetic materials

    E-Print Network [OSTI]

    Chan, Keith T.

    2011-01-01T23:59:59.000Z

    Magnetism and Magnetic Materials Conference, Atlanta, GA (Nanostructured Magnetic Materials by Keith T. Chan Doctor ofinduced by a Si-based material occurs at a Si/Ni interface

  7. Thin film deposition by electric and magnetic crossed-field diode sputtering

    DOE Patents [OSTI]

    Welch, Kimo M. (Mountain View, CA)

    1980-01-01T23:59:59.000Z

    Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

  8. Nanostructured ceria based thin films ({<=}1 {mu}m) As cathode/electrolyte interfaces

    SciTech Connect (OSTI)

    Hierso, J. [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France); Boy, P.; Valle, K. [CEA-Le Ripault, LSCG, BP 15, 37000 Monts (France); Vulliet, J.; Blein, F. [CEA-Le Ripault, LCCA, BP 15, 37000 Monts (France); Laberty-Robert, Ch., E-mail: christel.laberty@upmc.fr [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France); Sanchez, C. [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France)

    2013-01-15T23:59:59.000Z

    Gadolinium doped cerium oxide (CGO: Ce{sub 0,9}Gd{sub 0,1}O{sub 2-{delta}}) films were used as an oxygen anion diffusion layer at the cathode/electrolyte interface of Solid Oxide Fuel Cells (SOFCs), between LSCF (lanthanum strontium cobalt ferrite) and YSZ (yttria-stabilized zirconia). Thin ({approx}100 nm) and thick ({approx}700 nm) mesoporous CGO layers were synthesized through a sol-gel process including organic template coupled with the dip-coating method. Structural and microstructural characterizations were performed, highlighting a well-bonded crystalline CGO nanoparticles network which delineates a 3-D inter-connected mesoporous network. Their electrical behaviors were investigated by impedance spectroscopy analysis of YSZ/mesoporous-CGO/LSCF half-cell. Anode-supported SOFCs, operating at 800 Degree-Sign C, with either dense or mesoporous CGO dip-coated interlayers were also fabricated [NiO-YSZ anode/YSZ/CGO/LSCF cathode]. The impact of the mesoporous CGO interlayers on SOFCs performances was investigated by galvanostatic analysis and compared to the behavior of a dense CGO interlayer. The polarization curves revealed an enhancement in the electrical performance of the cell, which is assigned to a decrease of the polarization resistance at the cathode/electrolyte interface. The integrity and connectivity of the CGO nanoparticles bonded network facilitates O{sup 2-} transport across the interface. - Graphical abstract: Thin and thick CGO films have been prepared through a sol-gel process and their potential application as SOFC cathode/electrolyte interlayer in SOFC has been investigated. Highlights: Black-Right-Pointing-Pointer Mesoporous ceria based thin films exhibit interesting performances for Solid Oxide Fuel Cell. Black-Right-Pointing-Pointer Mesoporous films were synthesized through the sol-gel process combined with the dip-coating. Black-Right-Pointing-Pointer Integrity and connectivity of the nanoparticles facilitates O{sup 2-} transport across the interface.

  9. JOURNAL DE PHYSIQUE Colloque C 1,suppl&mentau no2-3, Tome 32, Fkvrier-Mars 1971,page C 1 -15 SOME RECENT ACHIEVEMENTS IN MAGNETIC THIN FILMS

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    RECENT ACHIEVEMENTS IN MAGNETIC THIN FILMS by L. VALENTA Department of Theoretical Physics, Faculty,lattice distortion at the surface of films, theory and measurements of the spontaneous magnetiza- tion of ultra thin films, sublattices in films, pinning and diffusion in thin films. In this review we will briefly sketch

  10. Magnetic, transport, and structural properties of SrRuO{sub 3} thin films

    SciTech Connect (OSTI)

    Majcher, A. M. [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Institute of Physics, Jagiellonian University Krakow, Krakow (Poland); Rode, K.; Coey, J. M. D.; Stamenov, P., E-mail: stamenov.plamen@tcd.ie [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland)

    2014-05-07T23:59:59.000Z

    Thin films of the oxide ferromagnetic metal SrRuO{sub 3} (SRO) are studied, in view of their potential use within oxide-based spin electronic devices. Here, their epitaxial growth on Si-compatible SrTiO{sub 3} substrates is demonstrated by pulsed laser deposition. Detail on their initial, structural, magnetic, and magnetotransport characterisation is also provided. In particular, resistivity and Hall data are interpreted within a two/three carrier model, above T{sub C.} Below T{sub C}, some information about the anisotropy of the Fermi surface effective elipsoids (?1:4) is recovered. The low-temperature saturation magnetisation approaches 1??{sub B}/Ru, with an uniaxial anisotropy of above 0.6 MJm{sup –3}. Despite its low T{sub C} = 160?K, and in view of its relatively low carrier mobility, it is reasoned that SRO could be utilized as the electrode layer in low-temperature all-oxide-MTJ (Magnetic Tunnel Junction) demonstrators and as a seed layer for other ferromagnetic oxides, at and above room temperature.

  11. Engineering domain structures in nanoscale magnetic thin films via strain Jia-Mian Hu, T. N. Yang, L. Q. Chen, and C. W. Nan

    E-Print Network [OSTI]

    Chen, Long-Qing

    Engineering domain structures in nanoscale magnetic thin films via strain Jia-Mian Hu, T. N. Yang://scitation.aip.org/termsconditions. Downloaded to ] IP: 146.186.211.66 On: Thu, 09 Jan 2014 19:48:21 #12;Engineering domain structures in nanoscale magnetic thin films via strain Jia-Mian Hu,1,a) T. N. Yang,2 L. Q. Chen,1,2 and C. W. Nan1,a) 1

  12. Magnetic domain structure in nanocrystalline Ni-Zn-Co spinel ferrite thin films using off-axis electron holography

    SciTech Connect (OSTI)

    Zhang, D., E-mail: dzhang28@asu.edu [School of Engineering for Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287-6106 (United States); Ray, N. M.; Petuskey, W. T. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Smith, D. J.; McCartney, M. R. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

    2014-08-28T23:59:59.000Z

    We report a study of the magnetic domain structure of nanocrystalline thin films of nickel-zinc ferrite. The ferrite films were synthesized using aqueous spin-spray coating at low temperature (?90?°C) and showed high complex permeability in the GHz range. Electron microscopy and microanalysis revealed that the films consisted of columnar grains with uniform chemical composition. Off-axis electron holography combined with magnetic force microscopy indicated a multi-grain domain structure with in-plane magnetization. The correlation between the magnetic domain morphology and crystal structure is briefly discussed.

  13. Photocatalytic performance of Sn-doped TiO{sub 2} nanostructured thin films for photocatalytic degradation of malachite green dye under UV and VIS-lights

    SciTech Connect (OSTI)

    Sayilkan, F. [Inonu University, Faculty of Education, Department of Science, 44280 Malatya (Turkey); Asiltuerk, M. [Inonu University, Faculty of Arts and Science, Department of Chemistry, 44280 Malatya (Turkey); Tatar, P.; Kiraz, N. [Akdeniz University, Faculty of Arts and Science, Department of Chemistry, 07100 Antalya (Turkey); Sener, S. [Inonu University, Faculty of Arts and Science, Department of Chemistry, 44280 Malatya (Turkey); Arpac, E. [Akdeniz University, Faculty of Arts and Science, Department of Chemistry, 07100 Antalya (Turkey); Sayilkan, H. [Inonu University, Faculty of Education, Department of Science, 44280 Malatya (Turkey)], E-mail: hsayilkan@inonu.edu.tr

    2008-01-08T23:59:59.000Z

    Sn-doped and undoped nano-TiO{sub 2} particles have been synthesized by hydrotermal process without acid catalyst at 225 deg. C in 1 h. Nanostructure-TiO{sub 2} based thin films, contain at different solid ratio of TiO{sub 2} in coating, have been prepared on glass surfaces by spin-coating technique. The structure, surface morphology and optical properties of the thin films and the particles have been investigated by element analysis and XRD, BET and UV/VIS/NIR techniques. The photocatalytic performance of the films was tested for degradation of malachite green dye in solution under UV and VIS-lights. The results showed that the hydrothermally synthesized nano-TiO{sub 2} particles are fully anatase crystalline form and are easily dispersed in water, the coated surfaces have nearly super-hydrophilic properties and, the doping of transition metal ion efficiently improved the photocatalytic performance of the TiO{sub 2} thin film. The results also proved that malachite green is decomposed catalytically due to the pseudo first-order reaction kinetics.

  14. Shape and strain-induced magnetization reorientation and magnetic anisotropy in thin film Ti/CoCrPt/Ti lines and rings

    E-Print Network [OSTI]

    Velazquez, D.

    The contributions to the magnetic anisotropy of thin-film rings and lines of width 50 nm and above made from Ti(5?nm)/Co[subscript 0.66]Cr[subscript 0.22]Pt[subscript 0.12] (10 and 20 nm)/Ti (3 nm) with a perpendicular ...

  15. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Jamer, M. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Sterbinsky, G. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Assaf, B. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Arena, D. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Heiman, D. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics

    2014-12-07T23:59:59.000Z

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value. (auth)

  16. The interplay between spatially separated ferromagnetic and superconducting thin films

    E-Print Network [OSTI]

    Sullivan, Isaac John

    2013-02-22T23:59:59.000Z

    Ferromagnetic thin films have been grown via physical vapor deposition utilizing the technique of flash evaporation and characterized by measuring magnetization as a function of magnetic field. An Al thin film was evaporated atop the ferromagnetic...

  17. New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells

    E-Print Network [OSTI]

    Wang, DongLin

    2014-01-01T23:59:59.000Z

    Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-performance thin-film solar cells. In our strategy, a flat active layer is adopted for avoiding electrical degradation, and an optimization algorithm is applied to seek for an optimized light trapping structure for the best optical benefit. As an example, we show that the efficiency of a flat a-Si:H thin-film solar cell can be promoted close to the certified highest value. It is also pointed out that, by choosing appropriate dielectric materials with high refractive index (>3) and high transmissivity in wavelength region of 350nm-800nm, the conversion efficiency of solar cells can be further enhanced.

  18. au thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    micro-machine (see S. S. Irudayaraj and A. Emadi 15). In general, magnetic thin-film elements are used in many applications Hadiji, Rejeb 29 Thin Films of Chiral Motors...

  19. Acta Physicae Superficierum Vol VII 2004 EXPLORING ARTIFICIAL MAGNETISM

    E-Print Network [OSTI]

    Rau, Carl

    Acta Physicae Superficierum · Vol VII · 2004 EXPLORING ARTIFICIAL MAGNETISM FROM THIN FILMS of artificially structured, new magnetic materials play a fundamental role in modern science and technology. From thin films to patterned magnetic nano-structures, these magnetic materials and systems can be utilized

  20. Epitaxial {tau} phase MnAl thin films on MgO (001) with thickness-dependent magnetic anisotropy

    SciTech Connect (OSTI)

    Cui Yishen; Chen Wei [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Yin Wenjing; Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)

    2011-11-15T23:59:59.000Z

    In this study, ferromagnetic MnAl films were prepared by alternating Al/Mn quasi-monolayer deposition using a novel biased target ion beam deposition (BTIBD) technique. XRD results showed that the magnetic {tau} phase was well formed in MnAl thin films ({approx}10 nm), which grew epitaxially on single crystal MgO (001) substrates. The optimized saturation magnetization was {approx}394 emu/cc. Furthermore, we observed a thickness-dependent uniaxial anisotropy in ferromagnetic MnAl films, which was attributed to the change of the tetragonal lattice distortion as a function of film thickness. The relationship between the film thicknesses and saturation magnetizations suggested the existence of a magnetically dead layer {approx}2.7 nm with an extrapolated saturation moment around 523 emu/cc ({approx}1.90 {mu}{sub B}/Mn). This value has exceeded the experimental value in bulk materials and is close to the theoretically predicted magnetization ({approx}1.975 {mu}{sub B}/Mn).

  1. Magnetism at spinel thin film interfaces probed through soft x-ray spectroscopy techniques

    E-Print Network [OSTI]

    Chopdekar, R.V.

    2010-01-01T23:59:59.000Z

    Magnetism at spinel thin ?lm interfaces probed through softachievable in bulk form. Magnetism at the interface regionand the origin of the magnetism from multiple magnetic

  2. X-Ray Imaging of the Dynamic Magnetic Vortex Core Deformation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    X-Ray Imaging of the Dynamic Magnetic Vortex Core Deformation Print Magnetic thin-film nanostructures can exhibit a magnetic vortex state in which the magnetization vectors lie in...

  3. Normal-state transport in electron-doped La2-xCexCuO4 thin films in magnetic fields up to 40 Tesla

    E-Print Network [OSTI]

    Moshchalkov, Victor V.

    Normal-state transport in electron-doped La2-xCexCuO4 thin films in magnetic fields up to 40 Tesla.17 are studied in magnetic fields up to 40 Tesla. For the whole doping region investigated, the negative, the upper critical mag- netic field Bc2 order of 100 Tesla 8 is too high to be achieved. The n-type HTSCs

  4. Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

    SciTech Connect (OSTI)

    Lo, Fang-Yuh, E-mail: fangyuhlo@ntnu.edu.tw; Huang, Cheng-De; Chou, Kai-Chieh; Guo, Jhong-Yu; Liu, Hsiang-Lin; Chia, Chi-Ta [Department of Physics, National Taiwan Normal University, 11677 Taipei City, Taiwan (China); Ney, Verena; Ney, Andreas [Experimentalphysik, Universität Duisburg-Essen, 47057 Duisburg (Germany); Shvarkov, Stepan; Reuter, Dirk; Wieck, Andreas D. [Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum (Germany); Pezzagna, Sébastien [Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum (Germany); Centre de Recherche sur l'Hétéroépitaxie et ses Application, 06560 Valbonne, UPR-CNRS (France); Chern, Ming-Yau [Department of Physics, National Taiwan University, 10617 Taipei City, Taiwan (China); Massies, Jean [Centre de Recherche sur l'Hétéroépitaxie et ses Application, 06560 Valbonne, UPR-CNRS (France)

    2014-07-28T23:59:59.000Z

    Samarium ions of 200?keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1?×?10{sup 14} to 1?×?10{sup 16?}cm{sup ?2}. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1?×?10{sup 15?}cm{sup ?2} before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

  5. Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

    DOE Patents [OSTI]

    Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

    2005-08-23T23:59:59.000Z

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  6. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOE Patents [OSTI]

    Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

    2003-01-01T23:59:59.000Z

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  7. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOE Patents [OSTI]

    Toet, Daniel; Sigmon, Thomas W.

    2004-12-07T23:59:59.000Z

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  8. Tuning the Magnetic and Electronic Properties of FexSi1-x Thin Films for Spintronics

    E-Print Network [OSTI]

    Karel, Julie Elizabeth

    2012-01-01T23:59:59.000Z

    canonical dilute magnetic semiconductor, has been touted asand magnetic semiconductors. 24,51,52,63,120,130,131,132,133canonical dilute magnetic semiconductor, Ga 1-y Mn y As (y<

  9. Enhanced Magnetism in Epitaxial SrRuO3 Thin Films

    E-Print Network [OSTI]

    Grutter, A.J.

    2010-01-01T23:59:59.000Z

    Enhanced Magnetism in Epitaxial SrRuO 3 A. J. Grutter, 1, 2and their e?ects on magnetism. In this paper we demonstrateXMCD con?rmed that the magnetism originates from the Ru 4+

  10. Structure, Magnetism, and Transport of CuCr2Se4 Thin Films

    E-Print Network [OSTI]

    2008-01-01T23:59:59.000Z

    Structure, Magnetism, and Transport of CuCr 2 Se 4 Thindichroism shows that the magnetism persists to the surfacesuch as the nature of magnetism at surfaces and interfaces.

  11. Temperature dependence of magnetic properties of La0.7Sr0.3MnO3SrTiO3 thin films on silicon substrates

    E-Print Network [OSTI]

    Boyer, Edmond

    by a 20-nm-thick SrTiO3 001 buffer layer. X-ray diffraction and atomic force microscopy studies. INTRODUCTION Perovskite manganites RE 1-x AE xMnO3, where RE =rare earth and AE=alkaline earth formTemperature dependence of magnetic properties of La0.7Sr0.3MnO3Ã?SrTiO3 thin films on silicon

  12. Structural and magnetic properties of magnetron sputtered Ni-Mn-Sn ferromagnetic shape memory alloy thin films

    SciTech Connect (OSTI)

    Vishnoi, Ritu; Kaur, Davinder [Functional Nanomaterials Research Laboratory, Department of Physics and Center of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667 (India)

    2010-05-15T23:59:59.000Z

    In the present study, structural and magnetic properties of Mn-rich, off-stoichiometric, nanocrystalline Ni-Mn-Sn ferromagnetic shape memory alloy thin films, grown on Si (100) substrates at 550 deg. C by dc magnetron sputtering have been systematically investigated. The crystallization, surface morphology, and structural features were studied using x-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy. The structural transition from austenite to martensite was observed with an increase of Mn content. Austenitic phase with mixed L2{sub 1}/A2+B2 structure has been observed at room temperature in Ni{sub 52.6}Mn{sub 23.7}Sn{sub 23.6} (S{sub 1}) and Ni{sub 51.5}Mn{sub 26.1}Sn{sub 22.2} (S{sub 2}) films, while those with composition of Ni{sub 58.9}Mn{sub 28.0}Sn{sub 13.0} (S{sub 3}) and Ni{sub 58.3}Mn{sub 29.0}Sn{sub 12.6} (S{sub 4}) show martensitic phase with 14M modulated monoclinic structures. Field induced martensite-austenite transformation has been observed in magnetization studies using superconducting quantum interference device magnetometer. Temperature dependent magnetization measurements demonstrate the influence of magnetic field on the structural phase transition temperature. The investigations reveal an increase of martensitic transformation temperature (T{sub M}) with corresponding increase in substitution of Mn. The films exhibit ferromagnetic behavior at low temperatures below Curie temperature (T{sub C}). The decrease in saturation moment with increasing Mn content, indicates the existence of antiferromagnetic correlations within ferromagnetic matrix.

  13. Functionality Tuning in Vertically Aligned Nanocomposite Thin Films 

    E-Print Network [OSTI]

    Chen, Aiping

    2013-04-04T23:59:59.000Z

    Vertically aligned nanocomposite (VAN) oxide thin films are unique nanostructures with two-phase self-assembled, heteroepitaxially grown on single-crystal substrates. Both phases tend to grow vertically and simultaneously on a given substrate...

  14. Strain-induced modification in the magnetic properties of Mn{sub 5}Ge{sub 3} thin films

    SciTech Connect (OSTI)

    Dung, Dang Duc [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of) [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Odkhuu, Dorj; Cheol Hong, Soon; Cho, Sunglae [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of)] [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Thanh Vinh, Le [Aix Marseille Université, CNRS, CINaM-UMR 7325, 13288 Marseille (France)] [Aix Marseille Université, CNRS, CINaM-UMR 7325, 13288 Marseille (France)

    2013-08-21T23:59:59.000Z

    Epitaxial ferromagnetic Mn{sub 5}Ge{sub 3} thin films were stabilized on GaSb(001) and GaAs(001) substrates using molecular beam epitaxy. Compared to bulk Mn{sub 5}Ge{sub 3} materials, an enhancement of the Curie temperature above 350 K and about 320 K was observed for Mn{sub 5}Ge{sub 3}/GaAs(001) and Mn{sub 5}Ge{sub 3}/GaSb(001) heterostructures, respectively. The magnetization was found to decrease from 323 to 245 emu/cm{sup 3} for films grown on GaSb(001) and GaAs(001). Anomalous Hall effect measurements provide evidence of the strain-induced large spin polarization from density-functional study. Furthermore, our calculated results in bulk Mn{sub 5}Ge{sub 3} under strain indicate that the strain is the origin of different physical properties of Mn{sub 5}Ge{sub 3} grown on different substrates.

  15. Patterned Magnetic Nanostructures and Quantized Magnetic Disks

    E-Print Network [OSTI]

    -increasing demands in data storage and to new applications of magnetic devices in the field of sensors. NewPatterned Magnetic Nanostructures and Quantized Magnetic Disks STEPHEN Y. CHOU Invited Paper, opens up new opportunities for engineering innovative magnetic materials and devices, developing ultra

  16. Microwave Plasma Chemical Vapor Deposition of Nano-Structured Sn/C Composite Thin-Film Anodes for Li-ion Batteries

    E-Print Network [OSTI]

    Marcinek, M.

    2008-01-01T23:59:59.000Z

    Meeting on Lithium Batteries, Biarritz, France, June 18–23,Thin-Film Anodes for Li-ion Batteries M. Marcinek, L. J.Sn/C anodes for lithium batteries. Thin layers of graphitic

  17. Perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite (001) thin films

    SciTech Connect (OSTI)

    Yanagihara, H., E-mail: yanagiha@bk.tsukuba.ac.jp; Utsumi, Y.; Niizeki, T., E-mail: t-niizeki@imr.tohoku.ac.jp; Inoue, J.; Kita, Eiji [Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573 (Japan)

    2014-05-07T23:59:59.000Z

    We investigated the dependencies of both the magnetization characteristics and the perpendicular magnetic anisotropy of Co{sub x}Fe{sub 3–x}O{sub 4}(001) epitaxial films (x?=?0.5 and 0.75) on the growth conditions of the reactive magnetron sputtering process. Both saturation magnetization and the magnetic uniaxial anisotropy constant K{sub u} are strongly dependent on the reactive gas (O{sub 2}) flow rate, although there is little difference in the surface structures for all samples observed by reflection high-energy electron diffraction. In addition, certain dead-layer-like regions were observed in the initial stage of the film growth for all films. Our results suggest that the magnetic properties of Co{sub x}Fe{sub 3–x}O{sub 4} epitaxial films are governed by the oxidation state and the film structure at the vicinity of the interface.

  18. Chaotic magnetization dynamics in single-crystal thin-film structures

    SciTech Connect (OSTI)

    Shutyi, A. M., E-mail: shuty@mail.ru; Sementsov, D. I. [Ulyanovsk State University (Russian Federation)

    2009-01-15T23:59:59.000Z

    The nonlinear dynamics of homogeneously precessing magnetization in perpendicularly magnetized single-crystal films has been investigated in a wide range of ac field frequencies on the basis of a numerical solution to the Landau-Lifshitz equation and construction of the spectrum of Lyapunov exponents. The conditions for implementing and specific features of chaotic dynamic modes are revealed for films of three basic crystallographic orientations: (100), (110), and (111). It is shown that chaotic precession modes can be controlled using external magnetic fields. Time analogs of the Poincare section of chaotic mode trajectories are considered.

  19. Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere

    SciTech Connect (OSTI)

    Luna, H.; Franceschini, D. F.; Prioli, R.; Guimaraes, R. B.; Sanchez, C. M.; Canal, G. P.; Barbosa, M. D. L.; Galvao, R. M. O. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Cx. Postal 68528, Rio de Janeiro, RJ 21941-972 (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Rua Marques de Sao Vicente 225, 22453-970, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Departamento de Fisica Nuclear, Universidade de Sao Paulo, Caixa Postal 66328, 05315-970, Sao Paulo, SP (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil)

    2010-09-15T23:59:59.000Z

    Nanostrucured europium oxide and hydroxide films were obtained by pulsed Nd:YAG (532 nm) laser ablation of a europium metallic target, in the presence of a 1 mbar helium buffer atmosphere. Both the produced film and the ambient plasma were characterized. The plasma was monitored by an electrostatic probe, for plume expansion in vacuum or in the presence of the buffer atmosphere. The time evolution of the ion saturation current was obtained for several probe to substrate distances. The results show the splitting of the plume into two velocity groups, being the lower velocity profile associated with metal cluster formation within the plume. The films were obtained in the presence of helium atmosphere, for several target-to-substrate distances. They were analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and atomic force microscopy, for as-deposited and 600 deg. C treated-in-air samples. The results show that the as-deposited samples are amorphous and have chemical composition compatible with europium hydroxide. The thermally treated samples show x-ray diffraction peaks of Eu{sub 2}O{sub 3}, with chemical composition showing excess oxygen. Film nanostructuring was shown to be strongly correlated with cluster formation, as shown by velocity splitting in probe current versus time plots.

  20. Strain relaxation and enhanced perpendicular magnetic anisotropy in BiFeO{sub 3}:CoFe{sub 2}O{sub 4} vertically aligned nanocomposite thin films

    SciTech Connect (OSTI)

    Zhang, Wenrui; Jiao, Liang; Li, Leigang [Department of Materials Science and Engineering, Texas A and M University, College Station, Texas 77843 (United States); Jian, Jie; Khatkhatay, Fauzia; Chu, Frank [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843 (United States); Chen, Aiping [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843 (United States); Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Jia, Quanxi [Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); MacManus-Driscoll, Judith L. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Wang, Haiyan, E-mail: wangh@ece.tamu.edu [Department of Materials Science and Engineering, Texas A and M University, College Station, Texas 77843 (United States); Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843 (United States)

    2014-02-10T23:59:59.000Z

    Self-assembled BiFeO{sub 3}:CoFe{sub 2}O{sub 4} (BFO:CFO) vertically aligned nanocomposite thin films have been fabricated on SrTiO{sub 3} (001) substrates using pulsed laser deposition. The strain relaxation mechanism between BFO and CFO with a large lattice mismatch has been studied by X-ray diffraction and transmission electron microscopy. The as-prepared nanocomposite films exhibit enhanced perpendicular magnetic anisotropy as the BFO composition increases. Different anisotropy sources have been investigated, suggesting that spin-flop coupling between antiferromagnetic BFO and ferrimagnetic CFO plays a dominant role in enhancing the uniaxial magnetic anisotropy.

  1. Compositional dependence of the magnetic properties of epitaxial FeV/MgO thin films

    SciTech Connect (OSTI)

    Devolder, T., E-mail: thibaut.devolder@u-psud.fr; Eimer, S. [Institut d'Electronique Fondamentale, CNRS, UMR 8622, Orsay (France) [Institut d'Electronique Fondamentale, CNRS, UMR 8622, Orsay (France); Univ. Paris-Sud, 91405 Orsay (France); Tahmasebi, T. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Hauet, T.; Andrieu, S. [Institut Jean Lamour, CNRS - Universite de Lorraine, Boulevard des aiguillettes BP 70239, F-54506 Vandoeuvre le‘s Nancy (France)] [Institut Jean Lamour, CNRS - Universite de Lorraine, Boulevard des aiguillettes BP 70239, F-54506 Vandoeuvre le‘s Nancy (France)

    2013-12-09T23:59:59.000Z

    Owing to their bcc structures and the low lattice misfit with MgO, FeV alloys are interesting for MgO-based magnetic tunnel junctions. We use vector network analyzer ferromagnetic resonance to measure the magnetization, anisotropy, exchange stiffness, and damping of epitaxial FeV/MgO thin alloys of various V contents. The low magnetization, very high exchange stiffness (23 pJ/m) and very low effective damping (<0.0026) of the alloy with 20% V content makes it an interesting candidate for spin torque applications. The ultralow damping is consistent with a spin-orbit origin, which sheds light on the possible strategies to reduce the damping in alloys.

  2. CFN | Thin Films Group

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Synthesis and Characterization Facility Thin-Film Processing Facility Online Manager (FOM) website FOM manual ESR for lab 1L32 (High-Resolution SEM and x-ray...

  3. Thin Film Photovoltaics Research

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy (DOE) supports research and development of four thin-film technologies on the path to achieving cost-competitive solar energy, including:

  4. Magnetic properties of ion implanted Ge{sub 1-x}Mn{sub x} thin films solidified through pulsed laser melting

    SciTech Connect (OSTI)

    Commisso Dolph, Melissa [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Kim, Taeseok; Recht, Daniel; Aziz, Michael J. [Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Yin Wenjing; Fan Wenbin; Yu Jiani; Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)

    2011-05-01T23:59:59.000Z

    Ge{sub 1-x}Mn{sub x} thin films with an average Mn concentration of 0.64 at. % were fabricated through Mn ion implantation into crystalline germanium-on-insulator wafers. Implantation damage was removed and crystallinity restored by pulsed laser melting from a single 30-ns 308-nm XeCl{sup +} excimer laser pulse. Resolidified films demonstrated higher Curie temperatures but smaller saturation magnetizations than those of both as-implanted films and implanted films subjected to rapid thermal annealing. These findings are attributed to the redistribution of Mn during solidification.

  5. 335Nanostructured ZnO and ZAO transparent thin films by sputteringsurface characterization Corresponding author: M. Suchea, e-mail: mirasuchea@iesl.forth.gr

    E-Print Network [OSTI]

    as transparent electrode in solar cells and flat panel displays as well as for the fabrication of gratings Abstract. Zinc oxide (ZnO) and aluminum zinc oxide (ZAO) transparent thin films with different thickness Zinc oxide is one of the earliest discovered metal oxide gas sensing materials. It is an n-type semi

  6. Combined synchrotron X-rays and image correlation analyses of biaxially deformed W/Cu nanocomposite thin films on

    E-Print Network [OSTI]

    thin films on Kapton Soundes Djaziri,a* Pierre-Olivier Renault,a François Hild,b Eric Le Bourhis domain were conducted with W/Cu nanocomposite thin films deposited on a polyimide cruciform substrate; Nanostructured thin films 1. Introduction Over the recent years, great attention has been paid to miniaturized

  7. Mechanism of tailored magnetic anisotropy in amorphous Co{sub 68}Fe{sub 24}Zr{sub 8} thin films

    SciTech Connect (OSTI)

    Fu, Yu, E-mail: yu.fu@uni-due.de, E-mail: cangcangzhulin@gmail.com; Meckenstock, R.; Farle, M. [Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Universität Duisburg-Essen, 47057 Duisburg (Germany); Barsukov, I., E-mail: ibarsuko@uci.edu [Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Universität Duisburg-Essen, 47057 Duisburg (Germany); Physics and Astronomy, University of California, Irvine, California 92697 (United States); Lindner, J. [Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Universität Duisburg-Essen, 47057 Duisburg (Germany); Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf e.V., Bautzner Landstr. 400, 01328 Dresden (Germany); Raanaei, H. [Department of Physics, Persian Gulf University, Bushehr 75169 (Iran, Islamic Republic of); Hjörvarsson, B. [Department of Physics and Astronomy, Uppsala University, Box 516 SE-75120 Uppsala (Sweden)

    2014-02-17T23:59:59.000Z

    The mechanism of tailored magnetic anisotropy in amorphous Co{sub 68}Fe{sub 24}Zr{sub 8} thin films was investigated by ferromagnetic resonance (FMR) on samples deposited without an applied magnetic field, with an out-of-plane field and an in-plane field. Analysis of FMR spectra profiles, high frequency susceptibility calculations, and statistical simulations using a distribution of local uniaxial magnetic anisotropy reveal the presence of atomic configurations with local uniaxial anisotropy, of which the direction can be tailored while the magnitude remains at an intrinsically constant value of 3.0(2) kJ/m{sup 3}. The in-plane growth field remarkably sharpens the anisotropy distribution and increases the sample homogeneity. The results benefit designing multilayer spintronic devices based on highly homogeneous amorphous layers with tailored magnetic anisotropy.

  8. NANOSTRUCTURES, MAGNETIC SEMICONDUCTORS AND SPINELECTRONICS Paata Kervalishvili

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    to data storage, switching, lighting and other devices, can lead to substantially new hardwareNANOSTRUCTURES, MAGNETIC SEMICONDUCTORS AND SPINELECTRONICS Paata Kervalishvili Georgian Technical and manipulation on a nanometre scale, which allows the fabrication of nanostructures with the properties mainly

  9. Microwave Plasma Chemical Vapor Deposition of Nano-Structured Sn/C Composite Thin-Film Anodes for Li-ion Batteries

    SciTech Connect (OSTI)

    Stevenson, Cynthia; Marcinek, M.; Hardwick, L.J.; Richardson, T.J.; Song, X.; Kostecki, R.

    2008-02-01T23:59:59.000Z

    In this paper we report results of a novel synthesis method of thin-film composite Sn/C anodes for lithium batteries. Thin layers of graphitic carbon decorated with uniformly distributed Sn nanoparticles were synthesized from a solid organic precursor Sn(IV) tert-butoxide by a one step microwave plasma chemical vapor deposition (MPCVD). The thin-film Sn/C electrodes were electrochemically tested in lithium half cells and produced a reversible capacity of 440 and 297 mAhg{sup -1} at C/25 and 5C discharge rates, respectively. A long term cycling of the Sn/C nanocomposite anodes showed 40% capacity loss after 500 cycles at 1C rate.

  10. INTERFERENCE Interference from Thin Films

    E-Print Network [OSTI]

    La Rosa, Andres H.

    INTERFERENCE Interference from Thin Films Lecture notes La Rosa Portland State University PH-213 through, a sheet of glass #12;Out of phase #12;In phase #12;#12;Interference from thin films Key reasoning for analyzing interference in a thin film: Waves undergo phase shift due to i) reflections at a interface

  11. Epitaxial thin films

    DOE Patents [OSTI]

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25T23:59:59.000Z

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  12. Thin film photovoltaic cell

    DOE Patents [OSTI]

    Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

    1982-01-01T23:59:59.000Z

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  13. Control of the Magnetic and Magnetotransport Properties of La0.67Sr0.33MnO3 Thin Films Through Epitaxial Strain

    SciTech Connect (OSTI)

    Arenholz, Elke; Takamura, Y.; Chopdekar, R.V.; Arenholz, E.; Suzuki, Y.

    2007-12-20T23:59:59.000Z

    The influence of epitaxial strain, in the form of tetragonal distortions, on the magnetic and magnetotransport properties of La{sub 0.67}Sr{sub 0.33}MnO{sub 3} thin films was studied. The tetragonal distortion (c/a ratio) was modulated through the choice of the substrate, ranging from c/a=1.007 on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} substrates to 0.952 on (110)-oriented GdScO{sub 3} substrates. In agreement with previous theoretical predictions, these large values of tensile strain cause the Curie temperature and the saturation magnetization to decrease, alter the temperature dependence of the resistivity and magnetoresistance, and increase the resistivity several orders of magnitude.

  14. Structural, magnetic, and electronic properties of GdTiO{sub 3} Mott insulator thin films grown by pulsed laser deposition

    SciTech Connect (OSTI)

    Grisolia, M. N.; Bruno, F. Y.; Sando, D.; Jacquet, E.; Barthélémy, A.; Bibes, M., E-mail: manuel.bibes@thalesgroup.com [Unité Mixte de Physique, CNRS-Thales, 1 Av. Augustin Fresnel, Campus de l'Ecole Polytechnique, 91120 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France); Zhao, H. J. [Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Chen, X. M. [Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Bellaiche, L. [Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

    2014-10-27T23:59:59.000Z

    We report on the optimization process to synthesize epitaxial thin films of GdTiO{sub 3} on SrLaGaO{sub 4} substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie temperature T{sub C}?=?31.8?K with a saturation magnetization of 4.2??{sub B} per formula unit at 10?K. Transport measurements reveal an insulating response, as expected. Optical spectroscopy indicates a band gap of ?0.7?eV, comparable to the bulk value. Our work adds ferrimagnetic orthotitanates to the palette of perovskite materials for the design of emergent strongly correlated states at oxide interfaces using a versatile growth technique such as pulsed laser deposition.

  15. Thin-film optical initiator

    DOE Patents [OSTI]

    Erickson, Kenneth L. (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  16. Shielding superconductors with thin films

    E-Print Network [OSTI]

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01T23:59:59.000Z

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  17. NANOSCALE STRUCTURALAND MAGNETIC CHARACTERIZATION USING

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    of novel nanoscale storage devices and sensors. However, for successful utilization, it is essential]. Such unique properties of magnetic thin films and nanostructures hold great promise for the development to the characterization of nanostructured magnetic materials. 2. ELECTRON MICROSCOPY METHODS In the transmission electron

  18. Structure and magnetic properties of L1{sub 0}-FePt thin films on TiN/RuAl underlayers

    SciTech Connect (OSTI)

    Yang En; Ratanaphan, Sutatch [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Zhu Jiangang [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); ABB Professor of Engineering Department of Electrical and Computer Engineering, Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Laughlin, David E. [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); ALCOA Professor of Physical Metallurgy Materials Science and Engineering Department, Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2011-04-01T23:59:59.000Z

    Highly ordered L1{sub 0} FePt-oxide thin films with small grains were prepared by using a RuAl layer as a grain size defining seed layer along with a TiN barrier layer. Different HAMR (Heat Assisted Magnetic Recording) favorable underlayers were studied to encourage perpendicular texture and preferred microstructure. It was found that the epitaxial and small grain growth from the RuAl/TiN underlayer results in small and uniform grains in the FePt layer with perpendicular texture. By introducing the grain size defining underlayers, the FePt grain size can be reduced from 30 to 6 nm with the same volume fraction (9%) of SiO{sub 2} in the film, excellent perpendicular texture, and very high order parameter at 520 deg. C.

  19. Thin film composite electrolyte

    DOE Patents [OSTI]

    Schucker, Robert C. (The Woodlands, TX)

    2007-08-14T23:59:59.000Z

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  20. Enhancement of conduction noise absorption by hybrid absorbers composed of indium-tin-oxide thin film and magnetic composite sheet on a microstrip line

    SciTech Connect (OSTI)

    Kim, Sun-Hong; Kim, Sung-Soo, E-mail: sskim@chungbuk.ac.kr [Department of Advanced Materials Engineering, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2014-05-05T23:59:59.000Z

    In order to develop wide-band noise absorbers with a focused design for low frequency performance, this study investigates hybrid absorbers that are composed of conductive indium-tin-oxide (ITO) thin film and magnetic composite sheets. The ITO films prepared via reactive sputtering exhibit a typical value of electrical resistivity of ?10{sup ?4} ? m. Rubber composites with flaky Fe-Si-Al particles are used as the magnetic sheet with a high permeability and high permittivity. For the ITO film with a low surface resistance and covered by the magnetic sheet, approximately 90% power absorption can be obtained at 1?GHz, which is significantly higher than that of the original magnetic sheet or ITO film. The high power absorption of the hybrid absorber is attributed to the enhanced ohmic loss of the ITO film through increased electric field strength bounded by the upper magnetic composite sheet. However, for the reverse layering sequence of the ITO film, the electric field experienced by ITO film is very weak due to the electromagnetic shielding by the under layer of magnetic sheet, which does not result in enhanced power absorption.

  1. Magnetic Imaging of Micrometer and Nanometer-size Magnetic Structures and Their Flux-Pinning Effects on Superconducting Thin Films

    E-Print Network [OSTI]

    Ozmetin, Ali E.

    2010-07-14T23:59:59.000Z

    to various ferromagnetic structures. These magnetic structures include: (i) alternating iron-brass shims of 275 mu m period, (ii) an array of 4 mu m wide Co stripes with smaller period (9 mu m), (iii) a square array of 50nm diameter, high aspect ratio (5...

  2. Comparison of the magnetic properties of GeMn thin films through Mn L-edge x-ray absorption

    E-Print Network [OSTI]

    Ahlers, S.

    2010-01-01T23:59:59.000Z

    this promising magnetic semiconductor. This work was fundedhigh Curie temperature magnetic semiconductor. The materialfor composite magnetic semiconductor applications. At

  3. Effect of chemical order on the magnetic and electronic properties of epitaxial off-stoichiometry F e x S i 1 - x thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Karel, J.; Juraszek, J.; Minar, J.; Bordel, C.; Stone, K. H.; Zhang, Y. N.; Hu, J.; Wu, R. Q.; Ebert, H.; Kortright, J. B.; Hellman, F.

    2015-04-01T23:59:59.000Z

    Off-stoichiometry, epitaxial FexSi1-x thin films (0.5magnetic moment is strongly enhanced in the fully chemically disordered A2 phase, while both theoretical and experimental results show that the magnetization is nearly the same in the B2 and D0? phases, meaning partial chemical disorder does not influence the magnetism. The dependencies of the magnetic moments are directly and nonlinearly linked to the number of Si atoms, primarily nearest neighbor but also to a lesser extent (up to 10%) next nearest neighbor, surrounding Fe, explaining the similarities between B2 and D0? and the strong enhancement for the A2 structure. The calculated electronic density of states shows many similarities in both structure and spin polarization between the D0? and B2 structures, while the A2 structure exhibits disorder broadening and a reduced spin polarization.

  4. Metallophthalocyanine thin films : structure and physical properties

    E-Print Network [OSTI]

    Colesniuc, Corneliu Nicolai

    2011-01-01T23:59:59.000Z

    in copper phthalocyanine thin film transistors”, J. Park, J.free phthalocyanine thin films”, F. I. Bohrer, A. Sharoni,copper phthalocyanine thin-film transistors”, R. D. Yang, J.

  5. Doping in Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Yang, Zheng

    2009-01-01T23:59:59.000Z

    properties of ZnO:Mn thin films were comprehensivelyd exchange in ZnO:Mn DMS thin films. Both the ordinary andspin-obital ferromagnetism in ZnO:Mn DMS thin films.

  6. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

    1982-01-01T23:59:59.000Z

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  7. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, A.W.; Bhushan, M.

    1982-08-03T23:59:59.000Z

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  8. Thin film ion conducting coating

    DOE Patents [OSTI]

    Goldner, Ronald B. (Lexington, MA); Haas, Terry (Sudbury, MA); Wong, Kwok-Keung (Watertown, MA); Seward, George (Arlington, MA)

    1989-01-01T23:59:59.000Z

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  9. Study of Gd-doped Bi{sub 2}Te{sub 3} thin films: Molecular beam epitaxy growth and magnetic properties

    SciTech Connect (OSTI)

    Harrison, S. E.; Huo, Y.; Harris, J. S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Collins-McIntyre, L. J.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Li, S. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot, Oxfordshire OX11 0DE (United Kingdom); Shelford, L. R.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot, Oxfordshire OX11 0DE (United Kingdom); Pushp, A.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Arenholz, E. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2014-01-14T23:59:59.000Z

    Incorporation of magnetic dopants into topological insulators to break time-reversal symmetry is a prerequisite for observing the quantum anomalous Hall (QAHE) effect and other novel magnetoelectric phenomena. GdBiTe{sub 3} with a Gd:Bi ratio of 1:1 is a proposed QAHE system, however, the reported solubility limit for Gd doping into Bi{sub 2}Te{sub 3} bulk crystals is between ?0.01 and 0.05. We present a magnetic study of molecular beam epitaxy grown (Gd{sub x}Bi{sub 1–x}){sub 2}Te{sub 3} thin films with a high Gd concentration, up to x ? 0.3. Magnetometry reveals that the films are paramagnetic down to 1.5?K. X-ray magnetic circular dichroism at the Gd M{sub 4,5} edge at 1.5?K reveals a saturation field of ?6?T, and a slow decay of the magnetic moment with temperature up to 200?K. The Gd{sup 3+} ions, which are substitutional on Bi sites in the Bi{sub 2}Te{sub 3} lattice, exhibit a large atomic moment of ?7??{sub B}, as determined by bulk-sensitive superconducting quantum interference device magnetometry. Surface oxidation and the formation of Gd{sub 2}O{sub 3} lead to a reduced moment of ?4??{sub B} as determined by surface-sensitive x-ray magnetic circular dichroism. Their large atomic moment makes these films suitable for incorporation into heterostructures, where interface polarization effects can lead to the formation of magnetic order within the topological insulators.

  10. Ion-modulated nonlinear electronic transport in carbon nanotube bundle/RbAg{sub 4}I{sub 5} thin film composite nanostructures

    SciTech Connect (OSTI)

    Sun, Jia-Lin [State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Zhang, Wei, E-mail: zhang-wei@iapcm.ac.cn [Institute of Applied Physics and Computational Mathematics, P.O. Box 8009(28), Beijing 100088 (China); Wei, Jinquan [Key Laboratory for Advanced Materials Processing Technology of Education Ministry, Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China); Gu, Bingfu [State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 (China)

    2014-01-28T23:59:59.000Z

    We have explored the ion-modulated electronic transport properties of mixed ionic-electronic conductor (MIEC) composite nanostructures made of superionic conductor RbAg{sub 4}I{sub 5} films and carbon nanotube (CNT) bundle spiderwebs. Our experimental and theoretical studies indicate that the formation of ion-electron bound states (IEBSs) leads to strong ion-electron interference effect and interesting electronic transport of CNT, such as nonlinear current-voltage (I–V) characteristics and novel temperature dependence of the current. With increasing temperature, the hybrid nanostructures show rich phases with different dependence of current on temperature, which is related to the structural phase transition of RbAg{sub 4}I{sub 5} and the transition of dissociation of IEBSs. The ion-modulation of the electric conductivity in such MIEC composite nanostructures with great tunability has been used to design new ionic-electronic composite nano-devices with function like field effect transistor.

  11. Crossover between fractal and nonfractal flux penetration in high-temperature superconducting thin films

    E-Print Network [OSTI]

    Wijngaarden, Rinke J.

    -optics. We study thin films of Tl2Ba2CuO6 x on substrates with vicinal angles of 0° well-oriented , 0.5°, 2 investigations of magnetic flux penetration in high-Tc superconducting thin films show often a flux front with the smooth and well-defined flux penetration observed in single crystals1,2,10­17 and in some thin films.1

  12. Vertically Aligned Nanocomposite Thin Films

    E-Print Network [OSTI]

    Bi, Zhenxing

    2012-07-16T23:59:59.000Z

    and epitaxial growth ability on given substrates. In the present work, we investigated unique epitaxial two-phase VAN (BiFeO3)x:(Sm2O3)1-x and (La0.7Sr0.3MnO3)x:(Mn3O4)1-x thin film systems by pulsed laser deposition. These VAN thin films exhibit a highly...

  13. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01T23:59:59.000Z

    of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

  14. Electronic structures and magnetic moments of Co{sub 3}FeN thin films grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Ito, Keita; Sanai, Tatsunori; Yasutomi, Yoko; Toko, Kaoru; Honda, Syuta; Suemasu, Takashi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)] [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Zhu, Siyuan; Kimura, Akio [Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526 (Japan)] [Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526 (Japan); Ueda, Shigenori [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-cho, Hyogo 679-5148 (Japan)] [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-cho, Hyogo 679-5148 (Japan); Takeda, Yukiharu; Saitoh, Yuji [Condensed Matter Science Division, Japan Atomic Energy Agency (JAEA), 1-1-1 Kouto, Sayo-cho, Hyogo 679-5148 (Japan)] [Condensed Matter Science Division, Japan Atomic Energy Agency (JAEA), 1-1-1 Kouto, Sayo-cho, Hyogo 679-5148 (Japan); Imai, Yoji [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan) [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2013-12-02T23:59:59.000Z

    We evaluated electronic structures and magnetic moments in Co{sub 3}FeN epitaxial films on SrTiO{sub 3}(001). The experimentally obtained hard x-ray photoemission spectra of the Co{sub 3}FeN film have a good agreement with those calculated. Site averaged spin magnetic moments deduced by x-ray magnetic circular dichroism were 1.52 ?{sub B} per Co atom and 2.08 ?{sub B} per Fe atom at 100 K. They are close to those of Co{sub 4}N and Fe{sub 4}N, respectively, implying that the Co and Fe atoms randomly occupy the corner and face-centered sites in the Co{sub 3}FeN unit cell.

  15. Magnetic domain pinning in an anisotropy-engineered GdTbFe thin film Stan Konings,a

    E-Print Network [OSTI]

    fields, these do- mains collapse to bubble domains which are found to local- ize on the irradiated dots lattices of 50 nm sized dots. The effect of the anisotropy patterns, differing in ion fluence and interdot of the irregularly shaped domains is observed. In perpendicular magnetic fields, however, the high field bubble

  16. Oxygen-vacancy-induced room-temperature magnetization in lamellar V{sub 2}O{sub 5} thin films

    SciTech Connect (OSTI)

    Cezar, A. B. [Instituto Federal do Paraná (IFPR), Campus Paranaguá (Brazil); Graff, I. L., E-mail: graff@fisica.ufpr.br; Varalda, J.; Schreiner, W. H.; Mosca, D. H. [Departamento de Física, Universidade Federal do Paraná (UFPR), Curitiba (Brazil)

    2014-10-28T23:59:59.000Z

    In this work, we study the local atomic and electronic structures as well as oxygen-vacancy-induced magnetic properties of electrodeposited V{sub 2}O{sub 5} films. Unlike stoichiometric V{sub 2}O{sub 5}, which is a diamagnetic lamellar semiconductor, our oxygen-defective V{sub 2}O{sub 5} films are ferromagnetic at room-temperature and their saturation magnetization decreases with air exposure time. X-ray absorption spectroscopy was used to monitor the aging effect on these films, revealing that freshly-made samples exhibit only local crystalline order, whereas the aged ones undoubtedly show an enhancement of crystallinity and coordination symmetry. The mean number of oxygen atoms around V tends to increase, indicating a decrease of oxygen vacancies with time. Concurrently with the decrease of oxygen vacancies, a loss of saturation magnetization is also observed. Hence, it can be concluded that the ferromagnetism of the V{sub 2}O{sub 5} films originates from a vacancy-induced mechanism, confirming the universality of this class of ferromagnetism.

  17. Ferroelectrics 342:73-82, 2006 Computational Modeling of Ferromagnetic Shape Memory Thin Films

    E-Print Network [OSTI]

    Luskin, Mitchell

    1 Ferroelectrics 342:73-82, 2006 Computational Modeling of Ferromagnetic Shape Memory Thin Films J films of Ni2MnGa ferromagnetic shape memory alloys in response to the application of a magnetic field: ferromagnetic, shape memory, active thin film, computational modeling INTRODUCTION The Ni2MnGa ferromagnetic

  18. Synthesis of thin films and materials utilizing a gaseous catalyst

    DOE Patents [OSTI]

    Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

    2013-10-29T23:59:59.000Z

    A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

  19. Magnetic damping and spin polarization of highly ordered B2 Co{sub 2}FeAl thin films

    SciTech Connect (OSTI)

    Cui, Yishen [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei, E-mail: jl5tk@virginia.edu [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Schäfer, Sebastian; Khodadadi, Behrouz; Mewes, Tim [Department of Physics and Astronomy, University of Alabama, Tuscaloosa, Alabama 35487 (United States); Osofsky, Mike [Naval Research Laboratory, Washington, DC 20375 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)

    2014-08-21T23:59:59.000Z

    Epitaxial Co{sub 2}FeAl films were synthesized using the Biased Target Ion Beam Deposition technique. Post annealing yielded Co{sub 2}FeAl films with an improved B2 chemical ordering. Both the magnetization and the Gilbert damping parameter were reduced with increased B2 ordering. A low damping parameter, ?0.002, was attained in B2 ordered Co{sub 2}FeAl films without the presence of the L2{sub 1} Heusler phase, which suggests that the B2 structure is sufficient for providing low damping in Co{sub 2}FeAl. The spin polarization was ?53% and was insensitive to the chemical ordering.

  20. Thin film-coated polymer webs

    DOE Patents [OSTI]

    Wenz, Robert P. (Cottage Grove, MN); Weber, Michael F. (Shoreview, MN); Arudi, Ravindra L. (Woodbury, MN)

    1992-02-04T23:59:59.000Z

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  1. Low work function, stable thin films

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2000-01-01T23:59:59.000Z

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  2. Semiconductor-nanocrystal/conjugated polymer thin films

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

    2010-08-17T23:59:59.000Z

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  3. Thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, Dora K. (1554 Rosalba St. NE., Albuquerque, Bernalillo County, NM 87112); Arnold, Jr., Charles (3436 Tahoe, NE., Albuquerque, Bernalillo County, NM 87111); Delnick, Frank M. (9700 Fleming Rd., Dexter, MI 48130)

    1996-01-01T23:59:59.000Z

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  4. Thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31T23:59:59.000Z

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  5. Lensless Imaging of Magnetic Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    this technique has been especially popular in imaging such complex structures as aerogels and yeast cells. When applying the CDI technique to a magnetic system, the same...

  6. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01T23:59:59.000Z

    Solar Energy Materials and Solar Cells, 86:207–216, 2005. [silicon thin films and solar cells. Journal of Appliedof a p-i-n thin-film solar cell with front transparent con-

  7. A thin film transistor driven microchannel device

    E-Print Network [OSTI]

    Lee, Hyun Ho

    2005-02-17T23:59:59.000Z

    .1. Principle of Electrophoresis?????????????? 1.2. Capillary and Microchip Electrophoresis????????... 1.3. Electrophoresis of DNA???????????????.. 2. Plasma Thin Film Deposition Process???????????... 2.1. Fundamentals of Plasma?????????????.?? 2.2. Plasma... Phase Chemical Reactions???????????.. 2.3. Plasma Enhanced Chemical Vapor Deposition??????.. 2.4. PECVD Thin Film?????????????????.. 3. Thin Film Transistor??????????????????.. 7 7 12 17 20 20 23 24 25 29 III...

  8. Nanocomposite Magnets: Transformational Nanostructured Permanent Magnets

    SciTech Connect (OSTI)

    None

    2010-10-01T23:59:59.000Z

    Broad Funding Opportunity Announcement Project: GE is using nanomaterials technology to develop advanced magnets that contain fewer rare earth materials than their predecessors. Nanomaterials technology involves manipulating matter at the atomic or molecular scale, which can represent a stumbling block for magnets because it is difficult to create a finely grained magnet at that scale. GE is developing bulk magnets with finely tuned structures using iron-based mixtures that contain 80% less rare earth materials than traditional magnets, which will reduce their overall cost. These magnets will enable further commercialization of HEVs, EVs, and wind turbine generators while enhancing U.S. competitiveness in industries that heavily utilize these alternatives to rare earth minerals.

  9. Lensless Imaging of Magnetic Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5 -ofLearningLensless Imaging of Magnetic

  10. Lensless Imaging of Magnetic Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5 -ofLearningLensless Imaging of MagneticLensless

  11. Thin Film Encapsulation Methods for Large Area MEMS Packaging

    E-Print Network [OSTI]

    Mahajerin, Armon

    2012-01-01T23:59:59.000Z

    P. J. French, “Robust Wafer-Level Thin-Film Encapsulation ofThe Elastic Properties of Thin- Film Silicon Nitride,” IEEELPCVD Silicon Nitride Thin Films at Cryogenic Temperatures,”

  12. 3D-2D ASYMPTOTIC ANALYSIS FOR INHOMOGENEOUS THIN FILMS

    E-Print Network [OSTI]

    3D-2D ASYMPTOTIC ANALYSIS FOR INHOMOGENEOUS THIN FILMS plate models, periodic pr* *o- files, and within the context of optimal design for thin films 5. Third application - Optimal design of a thin film 19 6. Final Remarks

  13. Mechanisms for fatigue and wear of polysilicon structural thin films

    E-Print Network [OSTI]

    Alsem, Daniel Henricus

    2006-01-01T23:59:59.000Z

    of single-crystal silicon thin films from 1991 to 2006. Thefor polycrystalline silicon thin films After the initialThis mechanism is specific to thin-film silicon where cracks

  14. Thin film buried anode battery

    DOE Patents [OSTI]

    Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

    2009-12-15T23:59:59.000Z

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  15. Thin film solar energy collector

    DOE Patents [OSTI]

    Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

    1983-11-22T23:59:59.000Z

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  16. Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications 2004 Diesel Engine Emissions Reduction...

  17. Templating Mesoporous Hierarchies in Silica Thin Films Using...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Templating Mesoporous Hierarchies in Silica Thin Films Using the Thermal Degradation of Cellulose Nitrate. Templating Mesoporous Hierarchies in Silica Thin Films Using the Thermal...

  18. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Measurement of Oxygen Incorporation into Thin Film Oxides at Room Temperature Upon Ultraviolet Phton Irradiation. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

  19. Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular Passivation. Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular...

  20. High Temperature Thin Film Polymer Dielectric Based Capacitors...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    High Temperature Thin Film Polymer Dielectric Based Capacitors for HEV Power Electronic Systems High Temperature Thin Film Polymer Dielectric Based Capacitors for HEV Power...

  1. A monolithic thin film electrochromic window

    SciTech Connect (OSTI)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31T23:59:59.000Z

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  2. amorphous biophotonic nanostructure: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    nanostructure Anitescu, Mihai 169 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  3. Aging phenomena in polystyrene thin films

    E-Print Network [OSTI]

    Koji Fukao; Hiroki Koizumi

    2008-01-05T23:59:59.000Z

    The aging behavior is investigated for thin films of atactic polystyrene through measurements of complex electric capacitance. During isothermal aging process the real part of the electric capacitance increases with aging time, while the imaginary part decreases with aging time. This result suggests that the aging time dependence of the real and imaginary parts are mainly associated with change in thickness and dielectric permittivity, respectively. In thin films, the thickness depends on thermal history of aging even above the glass transition. Memory and `rejuvenation' effects are also observed in the thin films.

  4. Permanent laser conditioning of thin film optical materials

    DOE Patents [OSTI]

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05T23:59:59.000Z

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  5. Permanent laser conditioning of thin film optical materials

    DOE Patents [OSTI]

    Wolfe, C. Robert (Palo Alto, CA); Kozlowski, Mark R. (Pleasanton, CA); Campbell, John H. (Livermore, CA); Staggs, Michael (Tracy, CA); Rainer, Frank (Livermore, CA)

    1995-01-01T23:59:59.000Z

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  6. Solid State Thin Film Lithium Microbatteries

    E-Print Network [OSTI]

    Shi, Z.

    Solid state thin film lithium microbatteries fabricated by pulsed-laser deposition (PLD) are suggested. During deposition the following process parameters must be considered, which are laser energy and fluence, laser pulse ...

  7. Nanomechanical properties of hydrated organic thin films

    E-Print Network [OSTI]

    Choi, Jae Hyeok

    2007-01-01T23:59:59.000Z

    Hydrated organic thin films are biological or synthetic molecularly thin coatings which impart a particular functionality to an underlying substrate and which have discrete water molecules associated with them. Such films ...

  8. Thermal Characterizationof Thin Film Superlattice Micro Refrigerators

    E-Print Network [OSTI]

    on a microscopic scale. Semiconductor lasers or other high power devices could also benefit from monolithic. Low contact resistance is essential for thin film coolers [3]. A 100 nm titanium metal layer was first

  9. Visible spectrometer utilizing organic thin film absorption

    E-Print Network [OSTI]

    Tiefenbruck, Laura C. (Laura Christine)

    2004-01-01T23:59:59.000Z

    In this thesis, I modeled and developed a spectrometer for the visible wavelength spectrum, based on absorption characteristics of organic thin films. The device uses fundamental principles of linear algebra to reconstruct ...

  10. Thin-film interference Aditya Joshi

    E-Print Network [OSTI]

    Packard, Richard E.

    , y, z, t) = Eo sin(kx - t)^y (1) It is worth noting what all the symbols stand for. · Eo is the peak of two important effects that will be explained presently. Figure 1: A thin film of oil floating on water that is incident upon the interface between air (na = 1) and a thin film of oil of thickness `t'(for this oil

  11. Quantification of thin film crystallographic orientation using X-ray diffraction with an area detector

    E-Print Network [OSTI]

    Baker, Jessica L

    2010-01-01T23:59:59.000Z

    elastic  properties of Au thin films by X?ray diffraction interface in  polythiophene thin?film transistors.  Nat copper  phthalocyanine thin films evaporated on amorphous 

  12. We study the interaction of a high frequency AC current with a magnetic field in an YBCO thin film by using time

    E-Print Network [OSTI]

    Shaw, Leah B.

    -TC superconductors. The focus of our research is on dynamical processes (electronic, magnetic, and vibrational

  13. Optical Constants ofOptical Constants of Uranium Nitride Thin FilmsUranium Nitride Thin Films

    E-Print Network [OSTI]

    Hart, Gus

    Optical Constants ofOptical Constants of Uranium Nitride Thin FilmsUranium Nitride Thin FilmsDelta--Beta Scatter Plot at 220 eVBeta Scatter Plot at 220 eV #12;Why Uranium Nitride?Why Uranium Nitride? UraniumUranium, uranium,Bombard target, uranium, with argon ionswith argon ions Uranium atoms leaveUranium atoms leave

  14. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOE Patents [OSTI]

    Brinker, Charles Jeffrey (Albuquerque, NM); Prakash, Sai Sivasankaran (Minneapolis, MN)

    1999-01-01T23:59:59.000Z

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  15. Thin film absorber for a solar collector

    DOE Patents [OSTI]

    Wilhelm, William G. (Cutchogue, NY)

    1985-01-01T23:59:59.000Z

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  16. Vibration welding system with thin film sensor

    DOE Patents [OSTI]

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18T23:59:59.000Z

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  17. Method for synthesizing thin film electrodes

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM)

    2007-03-13T23:59:59.000Z

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  18. Thin Film Transistors On Plastic Substrates

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

    2004-01-20T23:59:59.000Z

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  19. Tungsten-doped thin film materials

    DOE Patents [OSTI]

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09T23:59:59.000Z

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  20. Mesoscale morphologies in polymer thin films.

    SciTech Connect (OSTI)

    Ramanathan, M.; Darling, S. B. (Center for Nanoscale Materials)

    2011-06-01T23:59:59.000Z

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  1. Thin film dielectric composite materials

    DOE Patents [OSTI]

    Jia, Quanxi (Los Alamos, NM); Gibbons, Brady J. (Los Alamos, NM); Findikoglu, Alp T. (Los Alamos, NM); Park, Bae Ho (Los Alamos, NM)

    2002-01-01T23:59:59.000Z

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  2. Magnetic Nanostructures for post-CMOS Electronics

    E-Print Network [OSTI]

    -high density storage devices. Moreover, the semiconductor industry is looking beyond conventional CMOSMagnetic Nanostructures for post-CMOS Electronics NANOMATERIALS Our goal is to address storage technologies, notably magnetoresistive random access memory and bit-patterned media for ultra

  3. Electron cyclotron resonance microwave ion sources for thin film processing

    SciTech Connect (OSTI)

    Berry, L.A.; Gorbatkin, S.M.

    1990-01-01T23:59:59.000Z

    Plasmas created by microwave absorption at the electron cyclotron resonance (ECR) are increasingly used for a variety of plasma processes, including both etching and deposition. ECR sources efficiently couple energy to electrons and use magnetic confinement to maximize the probability of an electron creating an ion or free radical in pressure regimes where the mean free path for ionization is comparable to the ECR source dimensions. The general operating principles of ECR sources are discussed with special emphasis on their use for thin film etching. Data on source performance during Cl base etching of Si using an ECR system are presented. 32 refs., 5 figs.

  4. SAW determination of surface area of thin films

    DOE Patents [OSTI]

    Frye, Gregory C. (Albuquerque, NM); Martin, Stephen J. (Albuquerque, NM); Ricco, Antonio J. (Albuquerque, NM)

    1990-01-01T23:59:59.000Z

    N.sub.2 adsorption isotherms are measured from thin films on SAW devices. The isotherms may be used to determine the surface area and pore size distribution of thin films.

  5. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01T23:59:59.000Z

    film solar cells. CIGS solar cell efficiencies have beenCIGS, making it a favorable choice for thin-film solar cells.thin film solar cell [3]. However, use of CIGS has a number

  6. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Guided Self-Assembly of Gold Thin Films Print Wednesday, 21 November 2012 12:18 Nanoparticles-man-made atoms with unique optical,...

  7. Piezoreslstive graphite/polyimide thin films for micromachining applications

    E-Print Network [OSTI]

    Piezoreslstive graphite/polyimide thin films for micromachining applications A. Bruno Frazier) In this work, graphite/polyimide composite thin films are introduced and characterized for micromachining tetracarboxylic dianhydride+xydianiline/metaphenylene diamine polyimide matrix. The resultant material represents

  8. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-plasma-assisted Molecular Beam Epitaxy. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by...

  9. aluminium thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 21 Thin-Film Metamaterials called Sculptured Thin Films CERN Preprints Summary: Morphology...

  10. Equiatomic CoPt thin films with extremely high coercivity

    SciTech Connect (OSTI)

    Varghese, Binni; Piramanayagam, S. N., E-mail: Prem-SN@dsi.a-star.edu.sg; Yang, Yi; Kai Wong, Seng; Khume Tan, Hang; Kiat Lee, Wee [Data Storage Institute, (A-STAR) Agency for Science, Technology and Research, DSI Building, 5, Engineering Drive 1, Singapore 117608 (Singapore); Okamoto, Iwao [Western Digital Corporation, Singapore 638552 (Singapore)

    2014-05-07T23:59:59.000Z

    In this paper, magnetic and structural properties of near-equiatomic CoPt thin films, which exhibited a high coercivity in the film-normal direction—suitable for perpendicular magnetic recording media applications—are reported. The films exhibited a larger coercivity of about 6.5 kOe at 8?nm. The coercivity showed a monotonous decrease as the film thickness was increased. The transmission electron microscopy images indicated that the as fabricated CoPt film generally consists of a stack of magnetically hard hexagonal-close-packed phase, followed by stacking faults and face-centred-cubic phase. The thickness dependent magnetic properties are explained on the basis of exchange-coupled composite media. Epitaxial growth on Ru layers is a possible factor leading to the unusual observation of magnetically hard hcp-phase at high concentrations of Pt.

  11. 3D-2D ASYMPTOTIC ANALYSIS FOR MICROMAGNETIC THIN FILMS

    E-Print Network [OSTI]

    3D-2D ASYMPTOTIC ANALYSIS FOR MICROMAGNETIC THIN FILMS Classification: 35E99, 35M10, 49J45, 74K35. Keywords: -limit, thin films, micromagnetics, relaxation; 1 1. Introduction In recent years the understanding of thin film behavior has been helped

  12. THIN FILM MECHANICS BULGING AND Ph.D Dissertation

    E-Print Network [OSTI]

    Huston, Dryver R.

    THIN FILM MECHANICS ­BULGING AND STRETCHING Ph.D Dissertation Mechanical Engineering University of Vermont Wolfgang Sauter October 2000 #12;ii Abstract Thin films have experienced revolutionary development for the intensive effort in research in materials and processing techniques. Thin film windows are window

  13. Electrified thin films: Global existence of non-negative solutions

    E-Print Network [OSTI]

    Boyer, Edmond

    Electrified thin films: Global existence of non-negative solutions C. Imbert and A. Mellet February 6, 2012 Abstract We consider an equation modeling the evolution of a viscous liquid thin film equation, Non-local equation, Thin film equation, Non-negative solutions MSC: 35G25, 35K25, 35A01, 35B09 1

  14. MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ELECTROPLATED Cu THIN FILMS

    E-Print Network [OSTI]

    Volinsky, Alex A.

    MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ELECTROPLATED Cu THIN FILMS A.A. Volinsky* , J. Vella size, thin film microstructure and mechanical properties have become critical parameters-K dielectric materials and novel interconnects (Cu). For most reliability tests, knowledge of the thin film

  15. Electrified thin films: Global existence of non-negative solutions

    E-Print Network [OSTI]

    Electrified thin films: Global existence of non-negative solutions C. Imbert and A. Mellet August 31, 2011 Abstract We consider an equation modeling the evolution of a viscous liquid thin film equation, Non-local equation, Thin film equation, Non-negative solutions MSC: 35G25, 35K25, 35A01, 35B09 1

  16. Thin Films for Microelectronics and Photonics: Physics, Mechanics,

    E-Print Network [OSTI]

    Volinsky, Alex A.

    4 Thin Films for Microelectronics and Photonics: Physics, Mechanics, Characterization, USA bUniversity of South Florida, Tampa, FL, USA 4.1. TERMINOLOGY AND SCOPE 4.1.1. Thin Films Thin practice. The term thin films as used here refers to material layers deposited by vapor

  17. Electrified thin films: Global existence of non-negative solutions

    E-Print Network [OSTI]

    Electrified thin films: Global existence of non-negative solutions C. Imbert and A. Mellet February 4, 2011 Abstract We consider an equation modeling the evolution of a viscous liquid thin film equation, Non-local equation, Thin film equation, Non-negative solutions MSC: 35G25, 35K25, 35A01, 35B09 1

  18. SEECOMMENTARYAPPLIEDPHYSICAL The macroscopic delamination of thin films from

    E-Print Network [OSTI]

    Reis, Pedro Miguel

    SEECOMMENTARYAPPLIEDPHYSICAL SCIENCES The macroscopic delamination of thin films from elastic toughness, our analysis suggests a number of design guidelines for the thin films used in flexible fatigue damage, the thin film thickness must be greater than a critical value, which we determine

  19. RisR980(EN) Epitaxy, Thin films and

    E-Print Network [OSTI]

    Risø­R­980(EN) Epitaxy, Thin films and Superlattices Morten Jagd Christensen Risø National of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in structures were investigated. This thesis, "Epitaxy, Thin films and Superlattices", is written in partial

  20. Polymer-Metal Nanocomposites via Polymer Thin Film

    E-Print Network [OSTI]

    Shyamasundar, R.K.

    Polymer-Metal Nanocomposites via Polymer Thin Film T. P. Radhakrishnan School of Chemistry, University of Hyderabad Polymer-metal nanocomposite thin films are versatile materials that not only Chemistry Inside a Polymer Thin Film P. Radhakrishnan School of Chemistry, University of Hyderabad metal

  1. Structural study of Fe{sub 3}O{sub 4}(111) thin films with bulk like magnetic and magnetotransport behaviour

    SciTech Connect (OSTI)

    Gilks, D. [Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom); Lari, L.; Lazarov, V. K., E-mail: vlado.lazarov@york.ac.uk [Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom); York-JEOL Nanocentre, University of York, Heslington, York YO10 5BR (United Kingdom); Matsuzaki, K.; Susaki, T. [Secure Materials Center, Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, H. [Secure Materials Center, Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2014-05-07T23:59:59.000Z

    Post-annealing of Fe{sub 3}O{sub 4} films in a CO/CO{sub 2} atmosphere results in a significant improvement in magnetic and magnetotransport properties with values close to the single crystal bulk of M{sub s}???480?emu/cm{sup 3} and negative magnetoresistance of 0.05% in a field of 1?T. By using atomic resolution Z-contrast transmission electron microscopy, we show that improved magnetic properties in the annealed films are due to improved structural ordering as a result of the annealing process.

  2. Thin Films: Anisotropy and Surface Effects Brett Heinrich, Chairman Growth and magnetic properties of Fe films on vicinal to ,,001... substrates

    E-Print Network [OSTI]

    Demokritov, S.O.

    of Physics. S0021-8979 00 50708-7 The magnetic properties of ultrathin 3d transition metal films have been of the electron energy Figs. 1 a and 1 b . This is a finger print of an ordered step structure on the surface energy electron diffraction, x-ray diffraction, second harmonic generation SHG , as well as the Brillouin

  3. US polycrystalline thin film solar cells program

    SciTech Connect (OSTI)

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L. (Solar Energy Research Inst., Golden, CO (USA)) [Solar Energy Research Inst., Golden, CO (USA)

    1989-11-01T23:59:59.000Z

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  4. A thin film transistor driven microchannel device 

    E-Print Network [OSTI]

    Lee, Hyun Ho

    2005-02-17T23:59:59.000Z

    perturbation, an amorphous silicon (a-Si:H) thin film transistor (TFT) was connected to the microchannel device. The self-aligned a-Si:H TFT was fabricated with a two-photomask process. The result shows that the attachment of the TFT successfully suppressed...

  5. Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam

    SciTech Connect (OSTI)

    Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake [Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Hagino, Harutoshi; Miyazaki, Koji [Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550 (Japan); Tanaka, Saburo [Department of Mechanical Engineering, College of Engineering, Nihon University, Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642 (Japan)

    2014-06-07T23:59:59.000Z

    The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17?MeV. For the n-type thin films, nanodots with a diameter of less than 10?nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

  6. DOMAIN PATTERNS AND REVERSALS BY WALL MOVEMENTS OF THIN FILMS OF IRON AND NICKEL IRON

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    310 DOMAIN PATTERNS AND REVERSALS BY WALL MOVEMENTS OF THIN FILMS OF IRON AND NICKEL IRON By C. E directions but in the case of the nickel-iron film the reversal of magnetization in the perpendicular domain reversals in nickel-iron films observed by the Kerr effect, and that of Williams and Sherwood [2

  7. Oscillatory buckling mode in thin-film nucleation Ruben Cantero-Alvarez, Felix Otto

    E-Print Network [OSTI]

    Otto, Felix

    the magnetization is pinned at the lateral facets of the sample and buckles in­plane. As shown in [1], these regimesOscillatory buckling mode in thin-film nucleation Rub´en Cantero-´Alvarez, Felix Otto January 5 by Aharoni that there are at most three regimes. Two of these regimes are buckling regimes, where

  8. Magnetic nanostructures patterned by block copolymer lithography

    E-Print Network [OSTI]

    Ilievski, Filip, 1980-

    2008-01-01T23:59:59.000Z

    The aim of this research was twofold: understanding the methods of patterning magnetic films using self-assembled block copolymer masks and examining the magnetic reversal mechanisms of as deposited and patterned magnetic ...

  9. Radiation Damage in Nanostructured Metallic Films 

    E-Print Network [OSTI]

    Yu, Kaiyuan

    2013-04-15T23:59:59.000Z

    with favorable microstructures and to investigate their response to radiation. The goals of this thesis are to study the radiation responses of several nanostructured metallic thin film systems, including Ag/Ni multilayers, nanotwinned Ag and nanocrystalline Fe...

  10. Radiation Damage in Nanostructured Metallic Films

    E-Print Network [OSTI]

    Yu, Kaiyuan

    2013-04-15T23:59:59.000Z

    with favorable microstructures and to investigate their response to radiation. The goals of this thesis are to study the radiation responses of several nanostructured metallic thin film systems, including Ag/Ni multilayers, nanotwinned Ag and nanocrystalline Fe...

  11. Biomedical applications of nanostructured polymer films

    E-Print Network [OSTI]

    Gilbert, Jonathan Brian

    2014-01-01T23:59:59.000Z

    Functional polymeric thin films are often stratified with nanometer level structure and distinct purposes for each layer. These nanostructured polymeric materials are useful in a wide variety of applications including drug ...

  12. Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

    SciTech Connect (OSTI)

    Nomenyo, K.; Kostcheev, S.; Lérondel, G. [Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Gadallah, A.-S. [Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, Cairo University, Giza (Egypt); Rogers, D. J. [Nanovation, 8, route de Chevreuse, 78117 Châteaufort (France)

    2014-05-05T23:59:59.000Z

    Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

  13. Electrostatic thin film chemical and biological sensor

    DOE Patents [OSTI]

    Prelas, Mark A. (Columbia, MO); Ghosh, Tushar K. (Columbia, MO); Tompson, Jr., Robert V. (Columbia, MO); Viswanath, Dabir (Columbia, MO); Loyalka, Sudarshan K. (Columbia, MO)

    2010-01-19T23:59:59.000Z

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  14. Polycrystalline thin films FY 1992 project report

    SciTech Connect (OSTI)

    Zweibel, K. [ed.

    1993-01-01T23:59:59.000Z

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  15. Thin film photovoltaic panel and method

    DOE Patents [OSTI]

    Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

    1991-06-11T23:59:59.000Z

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  16. Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    temperature opening new perspective on magnetic refrigeration technology for everyday use. martino on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow and magnetic prop- erties. In particular, the irradiated film keeps the giant magnetocaloric effect at room

  17. Packaging material for thin film lithium batteries

    DOE Patents [OSTI]

    Bates, John B. (116 Baltimore Dr., Oak Ridge, TN 37830); Dudney, Nancy J. (11634 S. Monticello Rd., Knoxville, TN 37922); Weatherspoon, Kim A. (223 Wadsworth Pl., Oak Ridge, TN 37830)

    1996-01-01T23:59:59.000Z

    A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

  18. Thermoelectric properties of high quality nanostructured Ge:Mn thin D. Tanoff2*

    E-Print Network [OSTI]

    Boyer, Edmond

    Thermoelectric properties of high quality nanostructured Ge:Mn thin films D. Taïnoff2* , A. Barski2 nanostructured thin films and the measurement of their thermoelectric properties. We investigate the growth of Ge temperature thermoelectric properties of these layers containing spherical inclusions are discussed regarding

  19. Modeling of Substrate-Induced Anisotropy in Through-Plane Thermal Behavior of Polymeric Thin Films

    E-Print Network [OSTI]

    Lee, Jeong-Bong

    Modeling of Substrate-Induced Anisotropy in Through-Plane Thermal Behavior of Polymeric Thin Films, Atlanta, Georgia 30332-0269 SYNOPSIS Polymeric thin films are widely used in microelectronic applications properties of isotropic thin films for single layer (thin film rigidly clamped) and bilayer (thin film

  20. Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films

    E-Print Network [OSTI]

    Shahriar, Selim

    MRSEC Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films NSF Grant # 1121262 A. U. Adler Center In situ electrical properties of a-IGZO thin films were carried out at 200ºC as a function/"defect" structure of amorphous oxide films. In situ conductivity of 70 nm a-IGZO thin film at 200oC measured in van

  1. Fabrication and characterization of nanostructured magnetic particles for applications in data storage

    E-Print Network [OSTI]

    Farhoud, Maya S. (Maya Sami)

    2001-01-01T23:59:59.000Z

    Arrays of nanostructured magnetic particles ('nanomagnets') have potential applications in ultra-high-density data storage devices and dynamic magnetic memories, and are model systems for the study of magnetic phenomena ...

  2. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    DOE Patents [OSTI]

    Ruffner, Judith A. (Albuquerque, NM); Bullington, Jeff A. (Albuquerque, NM); Clem, Paul G. (Albuquerque, NM); Warren, William L. (Albuquerque, NM); Brinker, C. Jeffrey (Albuquerque, NM); Tuttle, Bruce A. (Albuquerque, NM); Schwartz, Robert W. (Seneca, SC)

    1999-01-01T23:59:59.000Z

    A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

  3. applications thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nikolay 27 Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application Engineering Websites Summary: Solvent-enhanced dye diffusion in...

  4. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01T23:59:59.000Z

    Photovoltaics . . . . . . . . . . . . . . . . . . . . . . .2 ZnSnS 4 (CZTS) thin film photovoltaics is an increasinglyfor Large-Scale Photovoltaics Deployment Environ. Sci.

  5. Thermoelectric effect in very thin film Pt/Au thermocouples

    E-Print Network [OSTI]

    Salvadori, M.C.; Vaz, A.R.; Teixeira, F.S.; Cattani, M.; Brown, I.G.

    2006-01-01T23:59:59.000Z

    TABLE I. Measured thermoelectric power S for samples ofThermoelectric effect in very thin film Pt/Au thermocouplesthickness dependence of the thermoelectric power of Pt films

  6. Rechargeable thin film battery and method for making the same

    DOE Patents [OSTI]

    Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

    2006-01-03T23:59:59.000Z

    A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

  7. active thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    behavior Biotechnology Websites Summary: on elastic polymeric membranes. Further development of such muscular thin films for building actuators). The development of such...

  8. Institute of Photo Electronic Thin Film Devices and Technology...

    Open Energy Info (EERE)

    Place: Tianjin Municipality, China Zip: 300071 Sector: Solar Product: A thin-film solar cell research institute in China. References: Institute of Photo-Electronic Thin...

  9. antibacterial thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Skovlin, Dean Oliver 2012-06-07 138 Uncooled Thin Film Pyroelectric IR Detector with Aerogel Thermal Isolation CiteSeer Summary: Uncooled pyroelectric IR imaging systems, such...

  10. alumina thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  11. acid thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  12. Tax Credits Give Thin-Film Solar a Big Boost

    Broader source: Energy.gov [DOE]

    California company will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.

  13. almgb14 thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  14. aggase2 thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  15. ablation thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  16. aln thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    deposited by the reactive dc magnetron sputtering technique at room, amorphous and polycrystalline GaN thin films have been deposited using the magnetron sputtering...

  17. anatase thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  18. area thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  19. aluminide thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  20. antiferroelectric thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  1. ain thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  2. advanced thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  3. arsenide thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  4. Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High temperature oxygen sensors are widely used for exhaust gas monitoring in automobiles. This particular study explores the use of thin film single crystalline samaria...

  5. Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells

    E-Print Network [OSTI]

    Cho, Sungmee

    2012-10-19T23:59:59.000Z

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because they are clean, reliable, and almost entirely pollution-free. SOFCs have flexible fuel selections compared with other fuel cell technologies. The main...

  6. Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells 

    E-Print Network [OSTI]

    Cho, Sungmee

    2012-10-19T23:59:59.000Z

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because they are clean, reliable, and almost entirely pollution-free. SOFCs have flexible fuel selections compared with other fuel cell technologies. The main...

  7. Angular behavior of the absorption limit in thin film silicon solar cells

    E-Print Network [OSTI]

    Naqavi, Ali; Söderström, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

    2013-01-01T23:59:59.000Z

    We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

  8. Origin of superstructures in (double) perovskite thin films

    SciTech Connect (OSTI)

    Shabadi, V., E-mail: shabadi@oxide.tu-darmstadt.de; Major, M.; Komissinskiy, P.; Vafaee, M.; Radetinac, A.; Baghaie Yazdi, M.; Donner, W.; Alff, L., E-mail: alff@oxide.tu-darmstadt.de [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2014-09-21T23:59:59.000Z

    We have investigated the origin of superstructure peaks as observed by X-ray diffraction of multiferroic Bi(Fe{sub 0.5}Cr{sub 0.5})O{sub 3} thin films grown by pulsed laser deposition on single crystal SrTiO{sub 3} substrates. The photon energy dependence of the contrast between the atomic scattering factors of Fe and Cr is used to rule out a chemically ordered double perovskite Bi{sub 2}FeCrO{sub 6} (BFCO). Structural calculations suggest that the experimentally observed superstructure occurs due to unequal cation displacements along the pseudo-cubic [111] direction that mimic the unit cell of the chemically ordered compound. This result helps to clarify discrepancies in the correlations of structural and magnetic order reported for Bi{sub 2}FeCrO{sub 6}. The observation of a superstructure in itself is not a sufficient proof of chemical order in double perovskites.

  9. Room-temperature magnetoelectric multiferroic thin films and applications thereof

    SciTech Connect (OSTI)

    Katiyar, Ram S; Kuman, Ashok; Scott, James F.

    2014-08-12T23:59:59.000Z

    The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

  10. Effect of Polarization and Morphology on the Optical Properties of Absorbing Nanoporous Thin Films

    E-Print Network [OSTI]

    Navid, Ashcon; Pilon, Laurent

    2008-01-01T23:59:59.000Z

    TE and TM waves incident on thin films with n c = 4.0, k c =hexagonal mesoporous silica thin films with pore diameter Dabsorbing nanocomposite thin film, graphically depicting the

  11. Charge transport and chemical sensing properties of organic thin-films

    E-Print Network [OSTI]

    Yang, Dengliang

    2007-01-01T23:59:59.000Z

    low Drift in Organic Thin-film Transistor Chemical Sensors”,emitting diodes and thin-film transistors. The electricalLOW DRIFT IN ORGANIC THIN-FILM TRANSISTOR CHEMICAL SENSORS

  12. Distributed Phase Shifter with PyrochloreBismuth Zinc Niobate Thin Films

    E-Print Network [OSTI]

    Park, Jaehoon; Lu, Jiwei; Boesch, Damien; Stemmer, Susanne; York, Robert A

    2006-01-01T23:59:59.000Z

    Bandpass Filter Using Thin-Film Barium-Strontium-Titanate (using Ba x Sr 1 - x TiO 3 thin films," IEEE Microwave GuidedBismuth Zinc Niobate Thin Films," J. Appl. Phys. 97,

  13. Epitaxial Stabilization of a Morphotropic Phase Boundary in Lead-Free Ferroelectric Thin Films

    E-Print Network [OSTI]

    Zeches, Robert James

    2011-01-01T23:59:59.000Z

    1376 (2005). D. L. Smith, Thin-Film Deposition PrinciplesMaterials Science of Thin Films, (Academic Press: San Diego,Laser Deposition of Thin Films, (John Wiley & Sons, Inc. :

  14. Investigation of deep level defects in CdTe thin films

    SciTech Connect (OSTI)

    Shankar, H.; Castaldini, A. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy); Dieguez, E.; Rubio, S. [Crystal Growth Lab, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Dauksta, E.; Medvid, A. [Institute of Technical Physics, Riga Technical University, 14 Azenes Str, Riga, Latvia, Department of Materials (Latvia); Cavallini, A. [Department of Physics and Astronomy,University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

    2014-02-21T23:59:59.000Z

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  15. Electrochemical and Electrochromic Properties of Nanoworm-shaped Ta2O5-Pt Thin-Films

    SciTech Connect (OSTI)

    Park, K

    2004-05-18T23:59:59.000Z

    A Ta{sub 2}O{sub 5}-Pt nanostructure electrode was fabricated by means of cosputtering. Worm-like Pt nanoparticles were produced in Ta{sub 2}O{sub 5} matrix as observed by transmission electron microscopy (TEM) and small angle x-ray scattering (SAXS). The electrochemical and electrochromic properties of nanoworm-shaped Ta{sub 2}O{sub 5}-Pt electrode are compared with those of Ta{sub 2}O{sub 5} thin-film electrode without Pt nanoparticles.

  16. The Electrodeless Discharge Lamps Coated with the Titania Thin Film for Photocatalysis in a Microwave Field

    E-Print Network [OSTI]

    Cirkva, Vladimir

    The Electrodeless Discharge Lamps Coated with the Titania Thin Film for Photocatalysis assisted photocatalysis using TiO2 thin films has been examined. Several factors influencing

  17. A survey of thin-film solar photovoltaic industry & technologies

    E-Print Network [OSTI]

    Grama, Sorin

    2007-01-01T23:59:59.000Z

    A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

  18. Wave propagation in highly inhomogeneous thin films: exactly solvable models

    E-Print Network [OSTI]

    Boyer, Edmond

    Wave propagation in highly inhomogeneous thin films: exactly solvable models Guillaume Petite(1 of wave propagation in some inhomogeneous thin films with highly space- dependent dielectric constant will show that depending on the type of space dependence, an incident wave can either propagate or tunnel

  19. CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS

    E-Print Network [OSTI]

    Hart, Gus

    CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS by David T. Oliphant. Woolley Dean, College of Physical and Mathematical Sciences #12;ABSTRACT CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS David T. Oliphant Department of Physics and Astronomy

  20. Electrical properties of quench-condensed thin film 

    E-Print Network [OSTI]

    Lee, Kyoungjin

    2009-05-15T23:59:59.000Z

    . The apparatus was shown to operate well for the fabrication of thin films while monitoring the growth in-situ. As a part of the preliminary research, we measured the electrical properties of aluminum thin films at liquid nitrogen temperature by using...

  1. VACUUM PUMPING STUDY OF TITANIUM-ZIRCONIUM-VANADIUM THIN FILMS*

    E-Print Network [OSTI]

    ERL 03-8 VACUUM PUMPING STUDY OF TITANIUM-ZIRCONIUM-VANADIUM THIN FILMS* Yulin Li# and Simon Ho high vacuum. As part of R&D efforts for the proposed Energy Recovery Linac at Cornell, the pumping performance of Titanium- Zirconium-Vanadium (TiZrV) NEG thin films was investigated to provide `engineering

  2. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, Bruce E. (Pleasanton, CA); McLean, II, William (Oakland, CA)

    1996-01-01T23:59:59.000Z

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  3. Rechargeable thin-film lithium batteries

    SciTech Connect (OSTI)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

    1993-09-01T23:59:59.000Z

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

  4. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, B.E.; McLean, W. II

    1996-02-13T23:59:59.000Z

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  5. Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films

    SciTech Connect (OSTI)

    Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana [Materials Physics Division, School of Advanced Sciences, VIT University, Vellore - 632 014 (India)

    2014-04-24T23:59:59.000Z

    Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

  6. In-situ TEM studies of magnetization reversal processes in magnetic nanostructures Amanda K Petford-Long1

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    nanostructure is that used in devices based on the giant magnetoresistance (GMR) or tunnel magnetoresistanceIn-situ TEM studies of magnetization reversal processes in magnetic nanostructures Amanda K Petford storage applications, often in the form of layered structures containing many thin layers. This has been

  7. All-thin-film multilayered multiferroic structures with a slot-line for spin-electromagnetic wave devices

    SciTech Connect (OSTI)

    Nikitin, Andrey A.; Ustinov, Alexey B. [Department of Physical Electronics and Technology, St. Petersburg Electrotechnical University, St. Petersburg 197376 (Russian Federation); Department of Mathematics and Physics, Lappeenranta University of Technology, Lappeenranta 53850 Finland (Finland); Semenov, Alexander A.; Kalinikos, Boris A. [Department of Physical Electronics and Technology, St. Petersburg Electrotechnical University, St. Petersburg 197376 (Russian Federation); Lähderanta, E. [Department of Mathematics and Physics, Lappeenranta University of Technology, Lappeenranta 53850 Finland (Finland)

    2014-03-03T23:59:59.000Z

    Spin-electromagnetic waves propagating in thin-film multilayered multiferroic structures containing a slot transmission line have been investigated both experimentally and theoretically. The thin-film structure was composed of a ferrite film, a ferroelectric film, and a slot-line. It was shown that the spectrum of the spin-electromagnetic wave was formed as a result of hybridization of the spin wave in the ferrite film with the electromagnetic wave in the slot-line and was electrically and magnetically tunable. For the experimental investigations, a microwave phase shifter based on the multiferroic structure has been fabricated. Performance characteristics are presented.

  8. Superconducting epitaxial thin films of CeNi{sub x}Bi{sub 2} with a bismuth square net structure

    SciTech Connect (OSTI)

    Buckow, Alexander; Kupka, Katharina; Retzlaff, Reiner; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

    2012-10-15T23:59:59.000Z

    We have grown highly epitaxial and phase pure thin films of the arsenic-free pnictide compound CeNi{sub x}Bi{sub 2} on (100) MgO substrates by reactive molecular beam epitaxy (RMBE). X-ray diffraction and reflection high-energy electron diffraction of the films confirm the ZrCuSiAs structure with a Bi square net layer. Superconductivity was observed in magnetization and resistivity measurements for x= 0.75 to 0.93 in these CeNi{sub x}Bi{sub 2} thin films with the highest critical temperature of 4.05 K and a resistive transition width of 0.1 K for x= 0.86. Our results indicate that thin film deposition by RMBE provides a tool to synthesize high-quality pnictide superconductors of the novel 112 type.

  9. Rechargeable thin-film electrochemical generator

    DOE Patents [OSTI]

    Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

    2000-09-15T23:59:59.000Z

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  10. Glow discharge plasma deposition of thin films

    DOE Patents [OSTI]

    Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

    1984-05-29T23:59:59.000Z

    A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

  11. Thin films of mixed metal compounds

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11T23:59:59.000Z

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  12. Method of producing solution-derived metal oxide thin films

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM); Ingersoll, David (Albuquerque, NM)

    2000-01-01T23:59:59.000Z

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  13. A Free Energy Model for Thin-film Shape Memory Alloys Jordan E. Massad*1

    E-Print Network [OSTI]

    Mechanical & Aerospace Engineering Dept., UCLA, Los Angeles, CA 90095 ABSTRACT Thin-film shape memory alloysA Free Energy Model for Thin-film Shape Memory Alloys Jordan E. Massad*1 , Ralph C. Smith1 and Greg comparison with thin-film NiTi superelastic hysteresis data. Keywords: Shape memory alloy model; thin film

  14. Crystallization and Martensitic Transformation Behavior of NiTi Shape Memory Alloy Thin Films

    E-Print Network [OSTI]

    Crystallization and Martensitic Transformation Behavior of NiTi Shape Memory Alloy Thin Films Alloy Thin Films Abstract The microstructure evolution and shape memory properties of near-equiatomic Ni-Ti thin films were investigated. Ni-Ti thin films sputter-deposited at room tem- perature are usually

  15. DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

  16. LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin

    E-Print Network [OSTI]

    , and readily scalable to larger substrates. Keywords: liquid phase deposition; electrochromic films; thin film

  17. Nanostructured thin films for solid oxide fuel cells

    E-Print Network [OSTI]

    Yoon, Jongsik

    2009-05-15T23:59:59.000Z

    in order to facilitate rapid mass transport of reactant gas to the reaction site. Numerous doped oxides have been studied for zirconia based SOFCs and the most common materials for cathodes are perovskite-type lanthanum strontium manganite, La 1-x Sr x... Fig.1.3. Schematic diagram of SOFC operating on hydrogen fuel 1.3.1 History of SOFCs Solid oxide electrolytes were first investigated by Emil Baur and his colleague H. Preis in the late 1930s using lanthanum, yttrium, cerium, tungsten...

  18. Tailoring of a metastable material: alfa-FeSi2 thin film

    SciTech Connect (OSTI)

    Cao, Guixin [ORNL; Singh, David J [ORNL; Zhang, Xiaoguang [ORNL; Samolyuk, German D [ORNL; Qiao, Liang [ORNL; Parish, Chad M [ORNL; Ke, Jin [The University of Tennessee; Zhang, Yanwen [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Guo, Hangwen [ORNL; Tang, Siwei [ORNL; Wang, Wenbin [ORNL; Yi, Jieyu [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Cantoni, Claudia [ORNL; Siemons, Wolter [ORNL; Payzant, E Andrew [ORNL; Biegalski, Michael D [ORNL; Ward, Thomas Zac [ORNL; Sales, Brian C [ORNL; Mandrus, D. [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Stocks, George Malcolm [ORNL; Gai, Zheng [ORNL

    2015-01-01T23:59:59.000Z

    The epitaxially stabilized metallic -FeSi2 thin films on Si(001) were grown using pulsed laser deposition. While the bulk material of -FeSi2 is a high temperature metastable phase and nonmagnetic, the thin film is stabilized at room temperature and shows unusual electronic transport and magnetic properties due to strain modification. The transport renders two different conducting states with a strong crossover at 50 K accompanied by an onset of ferromagnetism as well as a substantial magnetocaloric effect and magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of -FeSi2 obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our findings provide an example of a tailored material with interesting physics properties for practical applications.

  19. Influence of Gas Flow Rate for Formation of Aligned Nanorods in ZnO Thin Films for Solar-Driven Hydrogen Production

    SciTech Connect (OSTI)

    Shet, S.; Chen, L.; Tang, H.; Nuggehalli, R.; Wang, H.; Yan, Y.; Turner, J.; Al-Jassim, M.

    2012-04-01T23:59:59.000Z

    ZnO thin films have been deposited in mixed Ar/N{sub 2} gas ambient at substrate temperature of 500 C by radiofrequency sputtering of ZnO targets. We find that an optimum N{sub 2}-to-Ar ratio in the deposition ambient promotes the formation of well-aligned nanorods. ZnO thin films grown in ambient with 25% N{sub 2} gas flow rate promoted nanorods aligned along c-axis and exhibit significantly enhanced photoelectrochemical (PEC) response, compared with ZnO thin films grown in an ambient with different N{sub 2}-to-Ar gas flow ratios. Our results suggest that chamber ambient is critical for the formation of aligned nanostructures, which offer potential advantages for improving the efficiency of PEC water splitting for H{sub 2} production.

  20. Laser Induced Breakdown Spectroscopy and Applications Toward Thin Film Analysis

    E-Print Network [OSTI]

    Owens, Travis Nathan

    2011-01-01T23:59:59.000Z

    on the surface. Ultrafast laser pulses are shorter than thethe advantages of ultrafast laser pulses for thin film LIBS,each time. While ultrafast laser pulses are effective in

  1. Enhanced Superconducting Properties of Iron Chalcogenide Thin Films 

    E-Print Network [OSTI]

    Chen, Li

    2013-07-26T23:59:59.000Z

    . In this thesis, we first optimized pure FeSe thin films by different growth conditions using pulsed laser deposition (PLD) and post-annealing procedures. The microstructure properties of the films including the epitaxial quality, interface structure and secondary...

  2. Modeling of thin-film solar thermoelectric generators

    E-Print Network [OSTI]

    Weinstein, Lee Adragon

    Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

  3. Scanned pulsed laser annealing of Cu thin films

    E-Print Network [OSTI]

    Verma, Harsh Anand, 1980-

    2005-01-01T23:59:59.000Z

    As the microelectronics industry has moved to Cu as the conductor material, there has been much research into microstructure control in Cu thin films, primarily because grain sizes affect resistivity. Also with Cu-based ...

  4. Direct printing of lead zirconate titanate thin films

    E-Print Network [OSTI]

    Bathurst, Stephen, 1980-

    2008-01-01T23:59:59.000Z

    Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

  5. Chemical vapor deposition of organosilicon and sacrificial polymer thin films

    E-Print Network [OSTI]

    Casserly, Thomas Bryan

    2005-01-01T23:59:59.000Z

    Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing ...

  6. Structure of Molecular Thin Films for Organic Electronics | Stanford...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Organic Electronics Friday, April 6, 2012 - 1:00pm SSRL Conference Room 137-322 Bert Nickel, Physics Faculty and CeNS, Ludwig-Maximilians-University, Mnchen Thin films made out...

  7. Properties and sensor performance of zinc oxide thin films

    E-Print Network [OSTI]

    Min, Yongki, 1965-

    2003-01-01T23:59:59.000Z

    Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

  8. The macroscopic delamination of thin films from elastic substrates

    E-Print Network [OSTI]

    Reis, Pedro Miguel

    The wrinkling and delamination of stiff thin films adhered to a polymer substrate have important applications in “flexible electronics.” The resulting periodic structures, when used for circuitry, have remarkable mechanical ...

  9. Flexible, transparent thin film transistors raise hopes for flexible...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the thin-film transistor, fabricated using single-atom-thick layers of graphene and tungsten diselenide, among other materials. The white scale bar shows 5 microns, which is...

  10. Steering and Separating Excitons in Organic Thin Films and Devices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Steering and Separating Excitons in Organic Thin Films and Devices October 26, 2010 at 3pm36-428 Mark Thompson University of Southern California (USC) thompson abstract: We have...

  11. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of...

  12. Orientational Analysis of Molecules in Thin Films | Stanford...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Orientational Analysis of Molecules in Thin Films Monday, September 17, 2012 - 10:00am SSRL Bldg. 137, room 226 Daniel Kaefer The synchrotron-based X-ray absorption spectroscopy is...

  13. Antimony-Doped Tin(II) Sulfide Thin Films

    E-Print Network [OSTI]

    Chakraborty, Rupak

    Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ...

  14. Method for making surfactant-templated thin films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

    2010-08-31T23:59:59.000Z

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  15. Method for making surfactant-templated thin films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

    2002-01-01T23:59:59.000Z

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  16. Homogenization studies for optical sensors based on sculptured thin films 

    E-Print Network [OSTI]

    Jamaian, Siti Suhana

    2013-07-01T23:59:59.000Z

    In this thesis we investigate theoretically various types of sculptured thin film (STF) envisioned as platforms for optical sensing. A STF consists of an array of parallel nanowires which can be grown on a substrate using ...

  17. Multimonth controlled small molecule release from biodegradable thin films

    E-Print Network [OSTI]

    Hammond, Paula T.

    Long-term, localized delivery of small molecules from a biodegradable thin film is challenging owing to their low molecular weight and poor charge density. Accomplishing highly extended controlled release can facilitate ...

  18. amorphous thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amorphous Silicon Thin-Film Transistor Pixel.S.A. 1 LG Philips LCD Research and Development Center, An-Yang, 431-080, Korea (Received July 23, 2006; accepted October 31, 2006;...

  19. amorphous thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amorphous Silicon Thin-Film Transistor Pixel.S.A. 1 LG Philips LCD Research and Development Center, An-Yang, 431-080, Korea (Received July 23, 2006; accepted October 31, 2006;...

  20. Initiated chemical vapor deposition of functional polyacrylic thin films

    E-Print Network [OSTI]

    Mao, Yu, 1975-

    2005-01-01T23:59:59.000Z

    Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

  1. Functionalized multilayer thin films for protection against acutely toxic agents

    E-Print Network [OSTI]

    Krogman, Kevin Christopher

    2009-01-01T23:59:59.000Z

    The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

  2. al thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    dalek@eee.hku.hk , C. Y. Kwong, T. W. Lau, L. S. M. Lam, and W. K 276 DEFECT-FREE THIN FILM MEMBRANES FOR H2 SEPARATION AND ISOLATION Energy Storage, Conversion and...

  3. al thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    dalek@eee.hku.hk , C. Y. Kwong, T. W. Lau, L. S. M. Lam, and W. K 276 DEFECT-FREE THIN FILM MEMBRANES FOR H2 SEPARATION AND ISOLATION Energy Storage, Conversion and...

  4. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-06-01T23:59:59.000Z

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  5. TiNi-based thin films for MEMS applications

    E-Print Network [OSTI]

    Fu, Yongqing

    In this paper, some critical issues and problems in the development of TiNi thin films were discussed, including preparation and characterization considerations, residual stress and adhesion, frequency improvement, fatigue ...

  6. Enabling integration of vapor-deposited polymer thin films

    E-Print Network [OSTI]

    Petruczok, Christy D. (Christy Danielle)

    2014-01-01T23:59:59.000Z

    Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

  7. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  8. ag thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MgO, Ref. 21 Marcon, Marco 2 Multi-level surface enhanced Raman scattering using AgOx thin film Physics Websites Summary: by applying laser-direct writing (LDW) technique on...

  9. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema (OSTI)

    None

    2010-01-08T23:59:59.000Z

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  10. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema (OSTI)

    Sandia

    2009-09-01T23:59:59.000Z

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  11. Tandem photonic-crystal thin films surpassing Lambertian light-trapping limit over broad bandwidth and angular range

    E-Print Network [OSTI]

    Oskooi, Ardavan; Noda, Susumu

    2013-01-01T23:59:59.000Z

    The maximum absorption of solar radiation over the broadest range of frequencies and incident angles using the thinnest material possible has important applications for renewable-energy generation. Complete random texturing of an optically-thick film's surface to increase the path length of scattered light rays, first proposed nearly thirty years ago, has thus far remained the most effective approach for photon absorption over the widest set of conditions. Recent thin-film nanostructured designs involving resonant wave effects of photons have explored the possibility of superior performance though as of yet no proposal satisfying the dual requirements of enhanced and robust absorption over a large fraction of the solar spectrum has been made. Here using recent advances in computational electrodynamics we describe a general strategy for the design of a silicon thin film applicable to photovoltaic cells based on a quasi-resonant approach to light trapping where two partially-disordered photonic-crystal slabs, s...

  12. Nonlinear viscoelastic characterization of thin films using dynamic mechanical analysis

    E-Print Network [OSTI]

    Payne, Debbie Flowers

    1993-01-01T23:59:59.000Z

    NONLINEAR VISCOELASTIC CHARACTERIZATION OF THIN FILMS USING DYNAMIC MECHANICAL ANALYSIS A Thesis by DEBBIE FLOWERS PAYNE Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE AUGUST 1993 Major Subject: Aerospace Engineering NONLINEAR VISCOELASTIC CHARACTERIZATION OF THIN FILMS USING DYNAMIC MECHANICAL ANALYSIS A Thesis by DEBBIE FLOWERS PAYNE Approved as to style and content by: Thomas W...

  13. Recent technological advances in thin film solar cells

    SciTech Connect (OSTI)

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01T23:59:59.000Z

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  14. IEEE TRANSACTIONS ON MAGNETICS, VOL. 44, NO. 7, JULY 2008 1935 Reversal Mechanisms in Ferromagnetic Nanostructures

    E-Print Network [OSTI]

    Adeyeye, Adekunle

    devices. A major challenge for technological applications of magnetic nanostructures arrays is the precise Nanostructures A. O. Adeyeye, S. Goolaup, N. Singh, W. Jun, C. C. Wang, S. Jain, and D. Tripathy Information Storage Materials Laboratory (ISML), Department of Electrical and Computer Engineering, National

  15. Transparent conducting thin films for spacecraft applications

    SciTech Connect (OSTI)

    Perez-Davis, M.E.; Malave-Sanabria, T.; Hambourger, P.; Rutledge, S.K.; Roig, D.; Degroh, K.K.; Hung, C.

    1994-01-01T23:59:59.000Z

    Transparent conductive thin films are required for a variety of optoelectronic applications: automotive and aircraft windows, and solar cells for space applications. Transparent conductive coatings of indium-tin-oxide (ITO)-magnesium fluoride (MgF2) and aluminum doped zinc oxide (AZO) at several dopant levels are investigated for electrical resistivity (sheet resistance), carrier concentration, optical properties, and atomic oxygen durability. The sheet resistance values of ITO-MgF2 range from 10[sup 2] to 10[sup 11] ohms/square, with transmittance of 75 to 86 percent. The AZO films sheet resistances range from 10[sup 7] to 10[sup 11] ohms/square with transmittances from 84 to 91 percent. It was found that in general, with respect to the optical properties, the zinc oxide (ZnO), AZO, and the high MgF2 content ITO-MgF2 samples, were all durable to atomic oxygen plasma, while the low MgF2 content of ITO-MgF2 samples were not durable to atomic oxygen plasma exposure.

  16. Picoseconds-Laser Modification of Thin Films

    SciTech Connect (OSTI)

    Gakovic, Biljana; Trtica, Milan [Institute of Nuclear Sciences 'VINCA' 522, 11001 Belgrade (Serbia and Montenegro); Batani, Dimitri; Desai, Tara; Redaelli, Renato [Dipartimento di Fisica 'G. Occhialini', Universita' degli Studi Milano-Bicocca, Piazza della Scienza 3, Milan 20126 (Italy)

    2006-04-07T23:59:59.000Z

    The interaction of a Nd:YAG laser, pulse duration of 40 ps, with a titanium nitride (TiN) and tungsten-titanium (W-Ti) thin films deposited at silicon was studied. The peak intensity on targets was up to 1012 W/cm2. Results have shown that the TiN surface was modified, by the laser beam, with energy density of {>=}0.18 J/cm2 ({lambda}laser= 532 nm) as well as of 30.0 J/cm2 ({lambda}laser= 1064 nm). The W-Ti was surface modified with energy density of 5.0 J/cm2 ({lambda}laser= 532 nm). The energy absorbed from the Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects such as melting, vaporization of molten materials, dissociation and ionization of the vaporized material, appearance of plasma, etc. The following morphological changes of both targets were observed: (i) The appearance of periodic microstructures, in the central zone of the irradiated area, for laser irradiation at 532 nm. Accumulation of great number of laser pulses caused film ablation and silicon modification. (ii) Hole formation on the titanium nitride/silicon target was registered at 1064 nm. The process of the Nd:YAG laser interaction with both targets was accompanied by plasma formation above the target.

  17. Oxynitride Thin Film Barriers for PV Packaging

    SciTech Connect (OSTI)

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2005-11-01T23:59:59.000Z

    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  18. Electrochromism in copper oxide thin films

    SciTech Connect (OSTI)

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15T23:59:59.000Z

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  19. Vertically aligned biaxially textured molybdenum thin films

    SciTech Connect (OSTI)

    Krishnan, Rahul [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Riley, Michael [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lee, Sabrina [US Army Armament Research, Development and Engineering Center, Benet Labs, Watervliet, New York 12189 (United States); Lu, Toh-Ming [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2011-09-15T23:59:59.000Z

    Vertically aligned, biaxially textured molybdenum nanorods were deposited using dc magnetron sputtering with glancing flux incidence (alpha = 85 degrees with respect to the substrate normal) and a two-step substrate-rotation mode. These nanorods were identified with a body-centered cubic crystal structure. The formation of a vertically aligned biaxial texture with a [110] out-of-plane orientation was combined with a [-110] in-plane orientation. The kinetics of the growth process was found to be highly sensitive to an optimum rest time of 35 seconds for the two-step substrate rotation mode. At all other rest times, the nanorods possessed two separate biaxial textures each tilted toward one flux direction. While the in-plane texture for the vertical nanorods maintains maximum flux capture area, inclined Mo nanorods deposited at alpha = 85 degrees without substrate rotation display a [-1-1-4] in-plane texture that does not comply with the maximum flux capture area argument. Finally, an in situ capping film was deposited with normal flux incidence over the biaxially textured vertical nanorods resulting in a thin film over the porous nanorods. This capping film possessed the same biaxial texture as the nanorods and could serve as an effective substrate for the epitaxial growth of other functional materials.

  20. Adhesion and Thin-Film Module Reliability

    SciTech Connect (OSTI)

    McMahon, T. J.; Jorgenson, G. J.

    2006-01-01T23:59:59.000Z

    Among the infrequently measured but essential properties for thin-film (T-F) module reliability are the interlayer adhesion and cohesion within a layer. These can be cell contact layers to glass, contact layers to the semiconductor, encapsulant to cell, glass, or backsheet, etc. We use an Instron mechanical testing unit to measure peel strengths at 90deg or 180deg and, in some cases, a scratch and tape pull test to evaluate inter-cell layer adhesion strengths. We present peel strength data for test specimens laminated from the three T-F technologies, before and after damp heat, and in one instance at elevated temperatures. On laminated T-F cell samples, failure can occur uniformly at any one of the many interfaces, or non-uniformly across the peel area at more than one interface. Some peel strengths are Lt1 N/mm. This is far below the normal ethylene vinyl acetate/glass interface values of >10 N/mm. We measure a wide range of adhesion strengths and suggest that adhesion measured under higher temperature and relative humidity conditions is more relevant for module reliability.

  1. Microwave magnetic dynamics in highly conducting magnetic nanostructures

    SciTech Connect (OSTI)

    Kostylev, M.; Ivanov, E.; Samarin, S. [School of Physics M013, The University of Western Australia, Crawley, WA 6009 (Australia); Ding, J.; Adeyeye, A. O. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2014-05-07T23:59:59.000Z

    We performed low-noise broadband microstrip ferromagnetic resonance (FMR) measurements of the resonant modes of an array of metallic ferromagnetic nanostripes. In addition to a strong signal of the fundamental mode, we observed up to five weak-amplitude peaks in the field-resolved FMR traces, depending on the frequency. These higher-order absorption peaks have been theoretically identified as due to resonant excitation of odd and even standing spin waves across the direction of confinement in array plane (i.e., across the stripe width). The theory we developed suggests that the odd modes become excited in the spatially uniform microwave field of the FMR setup due to the large conductivity of metals. This promotes excitation of large-amplitude eddy currents in the sample by the incident microwave magnetic field and ultimately results in excitation of these modes. Following this theory, we found that the eddy current contribution is present only for patterned materials and when the microwave magnetic field is incident on one surface of sample surface, as it is in the case of a microstrip FMR.

  2. Nitrogen doped zinc oxide thin film

    SciTech Connect (OSTI)

    Li, Sonny X.

    2003-12-15T23:59:59.000Z

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  3. High-throughput characterization of stresses in thin film materials libraries using Si cantilever array wafers and digital holographic microscopy

    SciTech Connect (OSTI)

    Lai, Y. W.; Ludwig, A. [Institute for Materials, Chair for Materials for Microsystems, Ruhr-Universitaet Bochum, 44780 Bochum (Germany); Materials Research Department, Ruhr-Universitaet Bochum, 44780 Bochum (Germany); Hamann, S.; Ehmann, M. [Institute for Materials, Chair for Materials for Microsystems, Ruhr-Universitaet Bochum, 44780 Bochum (Germany)

    2011-06-15T23:59:59.000Z

    We report the development of an advanced high-throughput stress characterization method for thin film materials libraries sputter-deposited on micro-machined cantilever arrays consisting of around 1500 cantilevers on 4-inch silicon-on-insulator wafers. A low-cost custom-designed digital holographic microscope (DHM) is employed to simultaneously monitor the thin film thickness, the surface topography and the curvature of each of the cantilevers before and after deposition. The variation in stress state across the thin film materials library is then calculated by Stoney's equation based on the obtained radii of curvature of the cantilevers and film thicknesses. DHM with nanometer-scale out-of-plane resolution allows stress measurements in a wide range, at least from several MPa to several GPa. By using an automatic x-y translation stage, the local stresses within a 4-inch materials library are mapped with high accuracy within 10 min. The speed of measurement is greatly improved compared with the prior laser scanning approach that needs more than an hour of measuring time. A high-throughput stress measurement of an as-deposited Fe-Pd-W materials library was evaluated for demonstration. The fast characterization method is expected to accelerate the development of (functional) thin films, e.g., (magnetic) shape memory materials, whose functionality is greatly stress dependent.

  4. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    SciTech Connect (OSTI)

    None

    2008-06-30T23:59:59.000Z

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

  5. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    SciTech Connect (OSTI)

    Ruffner, J.A.; Clem, P.G.; Tuttle, B.A. [and others

    1998-01-01T23:59:59.000Z

    Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs.

  6. Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping

    SciTech Connect (OSTI)

    Lee, J. J.; Xing, G. Z., E-mail: guozhong.xing@unsw.edu.au; Yi, J. B.; Li, S. [School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia)] [School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia); Chen, T. [Department of Physics, The Chinese University of Hong Kong, Shatin (Hong Kong)] [Department of Physics, The Chinese University of Hong Kong, Shatin (Hong Kong); Ionescu, M. [Australian Nuclear Science and Technology Organization, Sydney, New South Wales 2234 (Australia)] [Australian Nuclear Science and Technology Organization, Sydney, New South Wales 2234 (Australia)

    2014-01-06T23:59:59.000Z

    Cluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped ZnO thin films, the samples codoped with Co and Eu exhibit a stronger magnetization with a giant coercivity of 1200?Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing the exchange interaction between the Co 3d electrons and the localized carriers induced by Eu{sup 3+} ions codoping. The insight gained with modulating coercivity in magnetic oxides opens up an avenue for applications requiring non-volatility in spintronic devices.

  7. Polycrystalline thin-film solar cells and modules

    SciTech Connect (OSTI)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01T23:59:59.000Z

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  8. Polycrystalline thin-film solar cells and modules

    SciTech Connect (OSTI)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01T23:59:59.000Z

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  9. Nanoporosity induced by ion implantation in deposited amorphous Ge thin films

    SciTech Connect (OSTI)

    Romano, L.; Impellizzeri, G.; Ruffino, F.; Miritello, M.; Grimaldi, M. G. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Bosco, L. [Scuola Superiore di Catania, Via Valdisavoia 9, I-95123 Catania (Italy)

    2012-06-01T23:59:59.000Z

    The formation of a nano-porous structure in amorphous Ge thin film (sputter-deposited on SiO{sub 2}) during ion irradiation at room temperature with 300 keV Ge{sup +} has been observed. The porous film showed a sponge-like structure substantially different from the columnar structure reported for ion implanted bulk Ge. The voids size and structure resulted to be strongly affected by the material preparation, while the volume expansion turned out to be determined only by the nuclear deposition energy. In SiGe alloys, the swelling occurs only if the Ge concentration is above 90%. These findings rely on peculiar characteristics related to the mechanism of voids nucleation and growth, but they are crucial for future applications of active nanostructured layers such as low cost chemical and biochemical sensing devices or electrodes in batteries.

  10. Laser processing of polymer nanocomposite thin films A. T. Sellinger, E. M. Leveugle, K. Gogick, L. V. Zhigilei, and J. M. Fitz-Geralda

    E-Print Network [OSTI]

    Zhigilei, Leonid V.

    that nanocomposite thin films tend to exhibit.6­12 Poly- mer thin films infused with carbon nanotubes CNTs often

  11. Doping in Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Yang, Zheng

    2009-01-01T23:59:59.000Z

    = 5.8x10 (cm ) Magnetic Field (Telsa) Sl op e (c) August 19,20 ? A Magnetic Field (Telsa) T = 300 K Oh m T n = 6.25x10 /= 2.7x10 (cm ) Magnetic Field (Telsa) Magnetic Field (Telsa)

  12. Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals Probed by Femtosecond Transient Absorption and Reflectivity. Carrier Dynamics in a-Fe2O3 (0001) Thin Films and...

  13. ZnS Thin Films Deposited by a Spin Successive Ionic Layer Adsorption...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ZnS Thin Films Deposited by a Spin Successive Ionic Layer Adsorption and Reaction Process. ZnS Thin Films Deposited by a Spin Successive Ionic Layer Adsorption and Reaction...

  14. Adsorption of iso-/n-butane on an Anatase Thin Film: A Molecular...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    iso-n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study. Adsorption of iso-n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study....

  15. Epoxy/Single Walled Carbon Nanotube Nanocomposite Thin Films for Composites Reinforcement

    E-Print Network [OSTI]

    Warren, Graham

    2010-07-14T23:59:59.000Z

    This work is mainly focused upon the preparation, processing and evaluation of mechanical and material properties of epoxy/single walled carbon nanotube (SWCNT) nanocomposite thin films. B-staged epoxy/SWCNT nanocomposite thin films at 50% of cure...

  16. Characterization of LiNi?.?Mn?.?O? Thin Film Cathode Prepared by Pulsed Laser Deposition

    E-Print Network [OSTI]

    Xia, Hui

    LiNi?.?Mn?.?O? thin films have been grown by pulsed laser deposition (PLD) on stainless steel (SS) substrates. The crystallinity and structure of thin films were investigated by X-ray diffraction (XRD). Microstructure and ...

  17. Generation of low work function, stable compound thin films by laser ablation

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  18. Study of Martensitic Phase transformation in a NiTiCu Thin Film...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Martensitic Phase transformation in a NiTiCu Thin Film Shape Memory Alloy Using Photoelectron Emission Microscopy. Study of Martensitic Phase transformation in a NiTiCu Thin Film...

  19. The development of a thin-film rollforming process for pharmaceutical continuous manufacturing

    E-Print Network [OSTI]

    Slaughter, Ryan (Ryan R.)

    2013-01-01T23:59:59.000Z

    In this thesis, a continuous rollforming process for the folding of thin-films was proposed and studied as a key step in the continuous manufacturing of pharmaceutical tablets. HPMC and PEG based polymeric thin-films were ...

  20. Layer-by-Layer Assembly of Clay-filled Polymer Nanocomposite Thin Films

    E-Print Network [OSTI]

    Jang, Woo-Sik

    2010-01-14T23:59:59.000Z

    robotic dipping system, for the preparation of these thin films, was built. The robot alternately dips a substrate into aqueous mixtures with rinsing and drying in between. Thin films of sodium montmorillonite clay and cationic polymer were grown...

  1. Influence of samaria doping on the resistance of ceria thin films...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    doping on the resistance of ceria thin films and its implications to the planar oxygen sensing devices. Influence of samaria doping on the resistance of ceria thin films and...

  2. On the room-temperature ferromagnetism of Zn1-xCrxO thin films...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    On the room-temperature ferromagnetism of Zn1-xCrxO thin films deposited by reactive co-sputtering. On the room-temperature ferromagnetism of Zn1-xCrxO thin films deposited by...

  3. Initiated chemical vapor deposition of polymeric thin films : mechanism and applications

    E-Print Network [OSTI]

    Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

    2005-01-01T23:59:59.000Z

    Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

  4. High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing

    E-Print Network [OSTI]

    Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

    2008-01-01T23:59:59.000Z

    One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

  5. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03T23:59:59.000Z

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  6. Atomic-scale Structural Characterizations of Functional Epitaxial Thin Films

    E-Print Network [OSTI]

    Zhu, Yuanyuan

    2013-06-03T23:59:59.000Z

    ................................................................ 10 1.3.1 Superconducting FeSe0.5Te0.5 epitaxial films........................................ 10 1.3.2 YBa2Cu3O7-x(YBCO) epitaxial thin films and flux-pinning effects ...... 14 1.3.3 Perovskite oxide epitaxial thin films... ...................................... 22 Figure 1.9. (a) Schematic illustration of ABO3 perovskite structure. (b) The corner -sharing oxygen octahedra in perovskite structure. . ................................... 23 Figure 1.10. (a) A HRTEM micrograph,67 (b) a Cs-corrected HRTEM image...

  7. Method of improving field emission characteristics of diamond thin films

    DOE Patents [OSTI]

    Krauss, A.R.; Gruen, D.M.

    1999-05-11T23:59:59.000Z

    A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

  8. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

    1998-02-03T23:59:59.000Z

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  9. Far From Threshold Buckling Analysis of Thin Films

    E-Print Network [OSTI]

    Benny Davidovitch; Robert D. Schroll; Dominic Vella; Mokhtar Adda-Bedia; Enrique Cerda

    2010-08-17T23:59:59.000Z

    Thin films buckle easily and form wrinkled states in regions of well defined size. The extent of a wrinkled region is typically assumed to reflect the zone of in-plane compressive stresses prior to buckling, but recent experiments on ultrathin sheets have shown that wrinkling patterns are significantly longer and follow different scaling laws than those predicted by standard buckling theory. Here we focus on a simple setup to show the striking differences between near-threshold buckling and the analysis of wrinkle patterns in very thin films, which are typically far from threshold.

  10. Method of improving field emission characteristics of diamond thin films

    DOE Patents [OSTI]

    Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

    1999-01-01T23:59:59.000Z

    A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

  11. Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell

    E-Print Network [OSTI]

    Li, Tong; Jiang, Chun

    2010-01-01T23:59:59.000Z

    We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

  12. A comparison of thick film and thin film traffic stripes

    E-Print Network [OSTI]

    Keese, Charles J

    1952-01-01T23:59:59.000Z

    Striys. . . Pigmented Bitusmn Stripes . Asphalt %uilt-Upa Striye vith Pigmented Portland Cement Mortar Cover Course 38 . ~ 41 Thin Film Stripes Used for Comparison Results of Comparing Thick Film Stripes and Thin Film Paint Stripes . ~ ~ ~ ~ ~ 43... was aspbaltio oonorets. The pavement in Test Areas 2y 3p and 4 vas portland cesmnh ooncrete, Two test areas (3 and 4) vere located in such manner as to provide uninterrupted flow of traffic over tbs entire length of the test area. The other two test areas (1...

  13. Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells

    E-Print Network [OSTI]

    Fan, Shanhui

    Optical Society of America OCIS codes: (310.7005) Transparent conductive coatings; (310.6845) Thin film

  14. Mechanisms of Zinc Oxide Nanocrystalline Thin Film Formation by Thermal Degradation of Metal-Loaded Hydrogels

    E-Print Network [OSTI]

    electrode in flat- panel displays,1 solar cells, and thin-film transistors.2,3 Other recent reports account

  15. Origin and control of magnetic exchange coupling in between focused electron beam deposited cobalt nanostructures

    SciTech Connect (OSTI)

    Nikulina, E.; Idigoras, O.; Porro, J. M.; Berger, A. [CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia-San Sebastian (Spain)] [CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia-San Sebastian (Spain); Vavassori, P.; Chuvilin, A. [CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia-San Sebastian (Spain) [CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia-San Sebastian (Spain); Ikerbasque, Basque Foundation for Science, Alameda Urquijo 36-5, 48011 Bilbao (Spain)

    2013-09-16T23:59:59.000Z

    We demonstrate the existence and control of inter-particle magnetic exchange coupling in densely packed nanostructures fabricated by focused electron beam induced deposition. With Xe beam post-processing, we have achieved the controlled reduction and eventual elimination of the parasitic halo-like cobalt deposits formed in the proximity of intended nanostructures, which are the identified source of the magnetic exchange coupling. The elimination of the halo-mediated exchange coupling is demonstrated by magnetic measurements using Kerr microscopy on Co pillar arrays. Electron microscopy studies allowed us to identify the mechanisms underlying this process and to verify the efficiency and opportunities of the described nano-scale fabrication approach.

  16. EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Ceder, Gerbrand

    materials for thin film solar cells such as CdTe and CIGS suffer from concerns over resource scarcity (eEARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1 conversion efficiencies should be increased. In terms of reducing module cost, thin film solar cells

  17. A Homogenized Free Energy Model for Hysteresis in Thin-film Shape Memory Alloys

    E-Print Network [OSTI]

    A Homogenized Free Energy Model for Hysteresis in Thin-film Shape Memory Alloys Jordan E. Massad1-8205 Abstract Thin-film shape memory alloys (SMAs) have become excellent candidates for mi- croactuator- lustrate aspects of the model through comparison with thin-film SMA superelastic and shape memory effect

  18. Barium ferrite thin film media with perpendicular c-axis orientation and small grain size

    E-Print Network [OSTI]

    Laughlin, David E.

    Barium ferrite thin film media with perpendicular c-axis orientation and small grain size Zailong, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 Barium ferrite thin films with perpendicular c conditions. The c-axis orientation of barium ferrite thin films is most sensitive to the oxygen partial

  19. Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

  20. Hybrid spectral/finite element analysis of dynamic delamination of patterned thin films

    E-Print Network [OSTI]

    Sottos, Nancy R.

    Hybrid spectral/finite element analysis of dynamic delamination of patterned thin films Phuong Tran Accepted 10 March 2008 Available online 20 March 2008 Keywords: Thin film Adhesion Delamination Dynamic analysis is performed to investigate the dynamic edge delamination of patterned thin films from a substrate

  1. X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films

    E-Print Network [OSTI]

    X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films T. J. Richardsona@lbl.gov Abstract Mixed metal thin films containing magnesium and a first-row transition element exhibit very large of magnesium hydride. Keywords: A. hydrogen storage materials, thin films; C. EXAFS, NEXAFS, X-ray diffraction

  2. Influence of stoichiometry on the dielectric properties of sputtered strontium titanate thin films

    E-Print Network [OSTI]

    York, Robert A.

    Influence of stoichiometry on the dielectric properties of sputtered strontium titanate thin films.1063/1.1598274 INTRODUCTION SrTiO3 thin films have been widely studied for their high dielectric constants and potential temperature superconductors. The dielectric permittivity of SrTiO3 thin films is significantly smaller than

  3. Effects of stretching and cycling on the fatigue behavior of polymer-supported Ag thin films

    E-Print Network [OSTI]

    Effects of stretching and cycling on the fatigue behavior of polymer-supported Ag thin films Gi March 2013 Keywords: Fatigue Thin films Fatigue crack initiation Intergranular failure Ductile fracture on characterizing the mechanical behavior of thin metal films and have observed that metals in thin-film form can

  4. Effects of thickness on the piezoelectric and dielectric properties of lead zirconate titanate thin films

    E-Print Network [OSTI]

    Sottos, Nancy R.

    Lead zirconate titanate PZT thin films with a Zr/Ti ratio of 52/48 were deposited on platinized silicon. Both the piezoelectric properties and the dielectric constants of the PZT thin films were found thin films. The measured changes in properties with thickness were correlated with the residual stress

  5. THIN FILM EPITAXY WITH OR WITHOUT SLOPE SELECTION BO LI AND JIAN-GUO LIU

    E-Print Network [OSTI]

    Soatto, Stefano

    THIN FILM EPITAXY WITH OR WITHOUT SLOPE SELECTION BO LI AND JIAN-GUO LIU Abstract. Two nonlinear diffusion equations for thin film epitaxy, with or without slope se- lection, are studied in this work = - · h 1 + | h|2 + h (1.1) and th = - · 1 - | h|2 h + h (1.2) that model epitaxial growth of thin films

  6. Thin film ZT characterization using transient Harman technique Zhixi Bian, Yan Zhang, Holger Schmidt, Ali Shakouri

    E-Print Network [OSTI]

    Thin film ZT characterization using transient Harman technique Zhixi Bian, Yan Zhang, Holger Street, Santa Cruz, CA 95064 Email: ali@soe.ucsc.edu, phone: (831) 459-3821 Abstract Thin-film to the freedom of tailoring the electron and heat transport. The characterization of these thin films

  7. Mathematical Model of Charge and Density Distributions in Interfacial Polymerization of Thin Films

    E-Print Network [OSTI]

    Freger, Viatcheslav "Slava"

    Mathematical Model of Charge and Density Distributions in Interfacial Polymerization of Thin Films INTRODUCTION Interfacial polymerization (IP) as a method of prepa- ration of thin film composite (TFC- tion. It has been shown that the formation of a thin film occurs very quickly and often results

  8. REVIEW OF SCIENTIFIC INSTRUMENTS 82, 023908 (2011) Calorimetry of epitaxial thin films

    E-Print Network [OSTI]

    Hellman, Frances

    2011-01-01T23:59:59.000Z

    REVIEW OF SCIENTIFIC INSTRUMENTS 82, 023908 (2011) Calorimetry of epitaxial thin films David W 2011; accepted 22 January 2011; published online 24 February 2011) Thin film growth allows. Microcalorimetry and nanocalorimetry techniques exist for the measurements of thin films but rely on an amorphous

  9. Thin film microcalorimeter for heat capacity measurements from 1.5 to 800 K

    E-Print Network [OSTI]

    Hellman, Frances

    Thin film microcalorimeter for heat capacity measurements from 1.5 to 800 K , D. W. Denlinger, E. N for publication 13 January 1994) A new microcalorimeter for measuring heat capacity of thin films in the range 1 silicon nitride membrane as the sample substrate, a Pt thin film resistor for temperatures greater than 40

  10. Microtensile Testing of Free-standing and Supported Metallic Thin Films

    E-Print Network [OSTI]

    Microtensile Testing of Free-standing and Supported Metallic Thin Films A thesis presented by Denis Films Abstract Mechanical properties of free-standing and supported Cu thin films were investi- gated observed experimentally on thin films. As-deposited Cu films with different film thicknesses on compliant

  11. Thin-Film Solid-Phase Extraction To Measure Fugacities of Organic

    E-Print Network [OSTI]

    Gobas, Frank

    Thin-Film Solid-Phase Extraction To Measure Fugacities of Organic Chemicals with Low Volatility organic chemicals ranging in octanol-air partition coefficients from 105.6 to 109.2. Thin films feasibility, equilibration times, reproducibility, and property characteristics of the thin films

  12. Gas Sensing Mechanism in Chemiresistive Cobalt and Metal-Free Phthalocyanine Thin Films

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Gas Sensing Mechanism in Chemiresistive Cobalt and Metal-Free Phthalocyanine Thin Films Forest I-free phthalocyanine (H2- Pc) thin films were investigated with respect to analyte basicity. Chemiresistive sensors However, when Pc thin films are exposed to O2, the films become doped and the conductivity increases

  13. Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films

    E-Print Network [OSTI]

    York, Robert A.

    thin films were deposited by sputtering on Pt/SiO2 structures using five different host substrates.1063/1.1459482 Oxide thin films remain very attractive to researchers due to their wide range of useful physical properties. Most groups have focused on the fabrication of thin films for op- tical and dielectric

  14. Sculptured thin films and glancing angle deposition: Growth mechanics and applications

    E-Print Network [OSTI]

    Robbie, Kevin

    Sculptured thin films and glancing angle deposition: Growth mechanics and applications K. Robbiea thin films with three dimensional microstructure controlled on the 10 nm scale were fabricated'' columnar thin film microstructure into desired forms ranging from zigzag shaped to helical to four

  15. Determination of refractive index, thickness, and the optical losses of thin films from

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Determination of refractive index, thickness, and the optical losses of thin films from prism­film.4760, 300.1030. 1. Introduction Transparent thin films find wide applications in optics: coating, sensors and optical losses. The optical losses of a thin film have three different origins: sur- face scattering due

  16. Microwave Planar Capacitors Employing Low Loss, High-K, and Tunable BZN Thin Films

    E-Print Network [OSTI]

    York, Robert A.

    Microwave Planar Capacitors Employing Low Loss, High-K, and Tunable BZN Thin Films Jaehoon Park) thin films deposited by RF magnetron sputtering. Device Q factors (QDUT) and capacitances (CDUT) were films can be the alternative to conventional BST thin films. Index Terms -- Dielectric properties

  17. Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

    E-Print Network [OSTI]

    Tian, Weidong

    Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films Can observed in epitaxial multiferroic BiFeO3 BFO thin films. The forward direction of the rectifying current the switchable diode effect and the ferroelectric resistive switching in epitaxially BFO thin films. BFO thin

  18. Low-Loss, Tunable Microwave Capacitors Using Bismuth Zinc Niobate Thin Films

    E-Print Network [OSTI]

    York, Robert A.

    Low-Loss, Tunable Microwave Capacitors Using Bismuth Zinc Niobate Thin Films Jaehoon Park, Jiwei in the measured frequency range. The results show that BZN thin films have great potential for low loss, tunable microwave devices. Keyword: low loss, thin film, capacitors, dielectric properties, bismuth zinc niobate I

  19. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

    1993-01-01T23:59:59.000Z

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  20. Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications

    E-Print Network [OSTI]

    Zheludev, Nikolay

    Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications S: Available online 28 May 2012 Keywords: Remote plasma Atomic layer deposition (ALD) ZnO Thin film transistor of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties

  1. DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME

    E-Print Network [OSTI]

    Hart, Gus

    DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME ULTRAVIOLET (1.6-35 NM deposition and characterization of reactively-sputtered uranium nitride thin films. I also report optical.1 Application 1 1.2 Optical Constants 2 1.3 Project Focus 7 2 Uranium Nitride Thin Films 8 2.1 Sputtering 8 2

  2. DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS-FILM SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

  3. Metal-black scattering centers to enhance light harvesting by thin-film solar cells

    E-Print Network [OSTI]

    Peale, Robert E.

    Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

  4. Growth of GaN Thin Films on Silicon Using Single Source Precursors

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    Growth of GaN Thin Films on Silicon Using Single Source Precursors and Development of New We have grown the GaN thin films on silicon substrates using the newly developed single source precursors by thermal MOCVD method. Highly oriented GaN thin films in the [002] direction with hexagonal

  5. Crystalline Thin Films Formed by Supramolecular Assembly for

    E-Print Network [OSTI]

    Gao, Hongjun

    with crystalline materials.[9] In contrast with small-mole- cule materials, supramolecular materials, which combineCrystalline Thin Films Formed by Supramolecular Assembly for Ultrahigh-Density Data Storage in this digital age, there is an urgent need to develop new technologies and materials. In the past decade

  6. THE ELECTRICAL BEHAVIOR OF SUPERCONDUCTING THIN-FILM MICROBRIDGES

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    19 THE ELECTRICAL BEHAVIOR OF SUPERCONDUCTING THIN-FILM MICROBRIDGES SELF-HEATING below Tc their behavior is found to be dominated by the effects of self-heating. At low voltages near Tc. t Danforth Fellow. electrical behavior of these microbridges is largely dominated by the effects of self-heating

  7. Micromachined thin-film gas flow sensor for microchemical reactors

    E-Print Network [OSTI]

    Besser, Ronald S.

    Micromachined thin-film gas flow sensor for microchemical reactors W C Shin and R S Besser New applications not practical before such as highly compact, non-invasive pressure sensors, accelerometers and gas power consumption, fast response, and low-cost batch production [1-4]. Spurred by the development

  8. Atomic-scale Structural Characterizations of Functional Epitaxial Thin Films 

    E-Print Network [OSTI]

    Zhu, Yuanyuan

    2013-06-03T23:59:59.000Z

    by computer .......................................... 157 7.3.2. Thin films and TEM samples preparation ......................................... 158 7.3.3. Cs-corrected STEM and quantitative image processing .................... 159 7.4 Results... ......................................................................................................... 28 Figure 1.13. HR-STEM micrograph of Graphene (a) before83 and (b) after84 probe CS-correction. ............................................................................................ 29 Figure 2.1. Schematic diagram of the pulsed laser...

  9. Long-wave models of thin film fluid dynamics

    E-Print Network [OSTI]

    A. J. Roberts

    1994-11-04T23:59:59.000Z

    Centre manifold techniques are used to derive rationally a description of the dynamics of thin films of fluid. The derived model is based on the free-surface $\\eta(x,t)$ and the vertically averaged horizontal velocity $\\avu(x,t)$. The approach appears to converge well and has significant differences from conventional depth-averaged models.

  10. Nonlinear viscoelastic characterization of thin films using dynamic mechanical analysis 

    E-Print Network [OSTI]

    Payne, Debbie Flowers

    1993-01-01T23:59:59.000Z

    manner similar to the traditional time temperature superposition principle for linear viscoelastic materials where stress systematically compresses or expands the time scale. From dynamic mechanical testing and analysis, the experimental viscoelastic.... D. Nonlinear Characterization of Thin Film Materials. . . . Nonlinear Viscoelastic Models . Dynamic Mechanical Testing. Summary of Literature Reviewed. 5 5 7 8 III THEORETICAL ANALYSIS . A. B. C. D. Conversion of Experimental Values...

  11. NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES

    E-Print Network [OSTI]

    Suresh, Subra

    on the nano-indentation of polycrystalline Cu thin films, of three different thicknesses) Si substrates. The films were then vacuum-annealed at 475°C for 1 h. The resulting polycrystalline. A diamond Berkovich pyramid indentor with a tip radius, R 50 nm, was used. It is known from nano

  12. Thin Films and the Systems-Driven Approach

    SciTech Connect (OSTI)

    Zweibel, K.

    2005-01-01T23:59:59.000Z

    A systems-driven approach is used to discern tradeoffs between cost and efficiency improvements for various thin-film module technologies and designs. Prospects for reduced system cost via such strategies are enhanced as balance-of-systems costs decline, and some strategies are identified for greater research focus.

  13. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices

    SciTech Connect (OSTI)

    Martin U. Pralle; James E. Carey

    2010-07-31T23:59:59.000Z

    SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

  14. Thin film cracking and ratcheting caused by temperature cycling

    E-Print Network [OSTI]

    Suo, Zhigang

    Thin film cracking and ratcheting caused by temperature cycling M. Huang and Z. Suo Mechanical caused by ratcheting in an adjacent ductile layer. For example, on a silicon die directly attached corners. Aided by cycling temperature, the shear stresses cause ratcheting in the aluminum pads

  15. Fabrication and Characterization of Titanium-doped Hydroxyapatite Thin Films

    E-Print Network [OSTI]

    Desai, Amit Y

    . Thin films of titanium-doped hydroxyapatite (HA-Ti) have been deposited onto silicon substrates at three different compositions. With direct current (dc) power to the Ti target of 5, 10, and 15W films with compositions of 0.7, 1.7 and 2.0 at.% titanium...

  16. SAND2003-8146C Symposium on Thin Films

    E-Print Network [OSTI]

    Volinsky, Alex A.

    SAND2003-8146C Symposium on Thin Films ICM-9 9th International Conference on the Mechanical FRACTURE OF THIN GOLD FILMS N. R. Moody, D. P. Adams*, M. J. Cordill**, D. F. Bahr**, A. A. Volinsky of interfacial fracture energies of thin gold films as a function of film thickness is presented in this paper

  17. Perovskite phase thin films and method of making

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

    2000-01-01T23:59:59.000Z

    The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

  18. INTERFACIAL STABILITY OF THIN FILM FIBER-OPTIC HYDROGEN SENSORS

    E-Print Network [OSTI]

    INTERFACIAL STABILITY OF THIN FILM FIBER-OPTIC HYDROGEN SENSORS R. Davis Smith, Ping Liu, Se and utility of these sensors, especially in the configuration that is based upon the optical response hydrogen sensors for use as safety monitors wherever hydrogen is used, stored, or produced. Prior work has

  19. Critical fields in ferromagnetic thin films: Identification of four regimes

    E-Print Network [OSTI]

    Otto, Felix

    Critical fields in ferromagnetic thin films: Identification of four regimes Rub´en Cantero­film elements is a paradigm for a multi­scale pattern­forming system. On one hand, there is a material length functional ceases to be positive definite. The degenerate subspace consists of the "unstable modes

  20. Method of preparing thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

    1997-01-01T23:59:59.000Z

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  1. Amorphous silicon thin film transistor as nonvolatile device. 

    E-Print Network [OSTI]

    Nominanda, Helinda

    2008-10-10T23:59:59.000Z

    n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs with molybdenum...

  2. Method of preparing thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, D.K.; Arnold, C. Jr.

    1997-11-25T23:59:59.000Z

    Novel hybrid thin film electrolyte is described, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1}cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  3. university-logo Numerical stability analysis for thin film flow

    E-Print Network [OSTI]

    Marzuola, Jeremy

    university-logo Numerical stability analysis for thin film flow: toward rigorous verification Blake Barker Indiana University October 2, 2013 B. Rigorous verification #12;university-logo Viscous roll waves (Picture courtesy Neil Balmforth, UBC.) B. Rigorous verification #12;university-logo Viscous roll waves 0 2

  4. Front and backside processed thin film electronic devices

    DOE Patents [OSTI]

    Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI); Yuan, Hao-Chih (Lakewood, CO); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI)

    2012-01-03T23:59:59.000Z

    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  5. Influence of Domain Wall Pinning on the Dynamic Behavior of Magnetic...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Influence of Domain Wall Pinning on the Dynamic Behavior of Magnetic Vortices Print Soft magnetic, micron-sized thin-film structures with magnetic vortices are intriguing systems...

  6. Polycrystalline thin-film technology: Recent progress in photovoltaics

    SciTech Connect (OSTI)

    Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

    1991-12-01T23:59:59.000Z

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  7. Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

    SciTech Connect (OSTI)

    Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it; Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Chikoidze, E.; Dumont, Y. [GEMaC, Université de Versailles St. Quentin en Yvelines-CNRS, Versailles (France); Fanciulli, M. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Milano (Italy)

    2014-05-07T23:59:59.000Z

    R-Fe-O (R?=?rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er{sub 2}O{sub 3} and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO{sub 3} and ErFe{sub 2}O{sub 4} phases develop following subsequent thermal annealing processes at 850?°C in air and N{sub 2}. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

  8. Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy

    SciTech Connect (OSTI)

    Krockenberger, Yoshiharu; Karimoto, Shin-ichi; Yamamoto, Hideki; Semba, Kouich [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

    2012-10-15T23:59:59.000Z

    We have investigated the formation of titanium nitride (TiN) thin films on (001) MgO substrates by molecular beam epitaxy and radio frequency acitvated nitrogen plasma. Although cubic TiN is stabile over a wide temperature range, superconducting TiN films are exclusively obtained when the substrate temperature exceeds 710 Degree-Sign C. TiN films grown at 720 Degree-Sign C show a high residual resistivity ratio of approximately 11 and the superconducting transition temperature (T{sub c}) is well above 5 K. Superconductivity has been confirmed also by magnetiztion measurements. In addition, we determined the upper critical magnetic field ({mu}{sub 0}H{sub c2}) as well as the corresponding coherence length ({xi}{sub GL}) by transport measurements under high magnetic fields. High-resolution transmission electron microscopy data revealed full in plane coherency to the substrate as well as a low defect density in the film, in agreement with a mean-free path length Script-Small-L Almost-Equal-To 106 nm, which is estimated from the residual resistivity value. The observations of reflection high energy electron diffraction intensity oscillations during the growth, distinct Laue fringes around the main Bragg peaks, and higher order diffraction spots in the reciprocal space map suggest the full controlability of the thickness of high quality superconducting TiN thin films.

  9. Oxygen off-stoichiometry and phase separation in EuO thin films

    SciTech Connect (OSTI)

    Altendorf, S. G.; Efimenko, A.; Oliana, V. [II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Str. 77, DE-50937 Koeln (Germany); Max Planck Institute for Chemical Physics of Solids, Noethnitzerstr. 40, DE-01187 Dresden (Germany); Kierspel, H. [II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Str. 77, DE-50937 Koeln (Germany); Rata, A. D.; Tjeng, L. H. [Max Planck Institute for Chemical Physics of Solids, Noethnitzerstr. 40, DE-01187 Dresden (Germany)

    2011-10-15T23:59:59.000Z

    We report on our study on the influence of the growth conditions on the europium/oxygen stoichiometry, morphology, magnetic properties, and electrical conductivity of EuO thin films. SQUID magnetometry and x-ray photoelectron spectroscopy were utilized as complementary techniques to determine the oxygen content of EuO{sub 1{+-}x} thin films grown by molecular beam epitaxy with and without the employment of the so-called Eu distillation process. We found indications for phase separation to occur in Eu-rich as well as in over-oxidized EuO for films grown at substrate temperatures below the Eu distillation temperature. Only a fraction of the excess Eu contributes to the metal-insulator transition in Eu-rich films grown under these conditions. We also observed that the surfaces of these films were ill defined and may even contain more Eu excess than the film average. Only EuO films grown under distillation conditions are guaranteed to have the same magnetic and electrical properties as stoichiometric bulk EuO, and to have surfaces with the proper Eu/O stoichiometry and electronic structure.

  10. Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

    SciTech Connect (OSTI)

    Rowe, David J., E-mail: rowex108@umn.edu, E-mail: kortshagen@umn.edu; Kortshagen, Uwe R., E-mail: rowex108@umn.edu, E-mail: kortshagen@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2014-02-01T23:59:59.000Z

    Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si{sub 1?x}Ge{sub x} for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.

  11. Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment

    E-Print Network [OSTI]

    Trassinelli, Martino; Eddrief, M; Etgens, V H; Gafton, V; Hidki, S; Lacaze, Emmanuelle; Lamour, Emily; Prigent, Christophe; Rozet, Jean-Pierre; Steydli, S; Zheng, Y; Vernhet, Dominique

    2014-01-01T23:59:59.000Z

    We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition with a consequent suppression of thermal hysteresis without any significant perturbation on the other structural and magnetic properties. In particular, the irradiated film keeps the giant magnetocaloric effect at room temperature opening new perspective on magnetic refrigeration technology for everyday use.

  12. Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment

    SciTech Connect (OSTI)

    Trassinelli, M., E-mail: martino.trassinelli@insp.jussieu.fr; Marangolo, M.; Eddrief, M.; Etgens, V. H.; Gafton, V.; Hidki, S.; Lacaze, E.; Lamour, E.; Prigent, C.; Rozet, J.-P.; Steydli, S.; Zheng, Y.; Vernhet, D. [CNRS, UMR 7588, Institut des NanoSciences de Paris (INSP), F-75005 Paris (France); Sorbonne Universités, UPMC Univ. Paris 06, UMR 7588, INSP, F-75005 Paris (France)

    2014-02-24T23:59:59.000Z

    We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition, with a consequent suppression of thermal hysteresis without any significant perturbation on the other structural and magnetic properties. In particular, the irradiated film keeps the giant magnetocaloric effect at room temperature opening new perspective on magnetic refrigeration technology for everyday use.

  13. Structural, magnetic, and optical properties of BiFeO3 and Bi2FeMnO6 epitaxial thin films: An experimental and first-principles study

    E-Print Network [OSTI]

    Ceder, Gerbrand

    grown on SrTiO3 001 substrates by pulsed-laser deposition, and their structural, magnetic, magneto At the same time, B-site ordering of transition-metal ions may make such materials ferromagnetic

  14. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

    1998-10-06T23:59:59.000Z

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

  15. Eddy Current Testing for Detecting Small Defects in Thin Films

    SciTech Connect (OSTI)

    Obeid, Simon; Tranjan, Farid M. [Electrical and Computer Engineering Department, UNCC (United States); Dogaru, Teodor [Albany Instruments, 426-O Barton Creek, Charlotte, NC 28262 (United States)

    2007-03-21T23:59:59.000Z

    Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

  16. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

    1998-10-06T23:59:59.000Z

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

  17. Thin film battery and method for making same

    DOE Patents [OSTI]

    Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

    1994-01-01T23:59:59.000Z

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

  18. Thin film battery and method for making same

    DOE Patents [OSTI]

    Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

    1994-08-16T23:59:59.000Z

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

  19. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1999-02-09T23:59:59.000Z

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  20. Thin-Film Reliability Trends Toward Improved Stability

    SciTech Connect (OSTI)

    Jordan, D. C.; Kurtz, S. R.

    2011-01-01T23:59:59.000Z

    Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

  1. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1997-10-07T23:59:59.000Z

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  2. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1999-02-09T23:59:59.000Z

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  3. Thin-Film Reliability Trends Toward Improved Stability: Preprint

    SciTech Connect (OSTI)

    Jordan, D. C.; Kurtz, S. R.

    2011-07-01T23:59:59.000Z

    Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

  4. Chemical deposition of thin films of lead selenide

    E-Print Network [OSTI]

    Skovlin, Dean Oliver

    1956-01-01T23:59:59.000Z

    LIBRARY A A IN COLLEGE OF TEXAS CHEMICAL DEPOSITIOH OF THIN FILMS OF LEAD SELEHIDE A THESIS DEAN OLIVER SEOVLIH Submitted to the Graduate School of the Agricultural and Mechanical College of Texas in partial fulfillment of the requirements..., the author is indebted for her encouragenent and understanding which wade this study possible. iv I INTRODUCTIOW . I I LITERATURE SURVEY. I II EXP ERIMEHTAL Page 1. Choice of Reagents. 2. The Reaction of DMS and Lead Ritrate in Aqueous Solution. 3...

  5. Experimental thin film deposition and surface analysis techniques

    SciTech Connect (OSTI)

    Collins, W.E.; Rambabu, B.

    1986-01-01T23:59:59.000Z

    An attempt has been made to present some of the thin-film deposition and surface analysis techniques which may be useful in growing superionic conducting materials. Emphasis is made on the importance of being careful in selecting process parameters and materials in order to produce films with properties outlined in this article. Also, special care should be given to proper consideration of grain boundary effects.

  6. Electrical properties of quench-condensed thin film

    E-Print Network [OSTI]

    Lee, Kyoungjin

    2009-05-15T23:59:59.000Z

    cryopump is used for high vacuum pumping. Materials to be evaporated (evaporant) are held by evaporation sources, like a crucible, boat or wire coil. Tungsten wire is commonly used as an evaporation source for materials like aluminum, nickel, chromium... films were evaporated at room temperature with NRC 3114 commercial thermal evaporator. We deposited aluminum and nickel thin films in a form of bar with shadow mask. A commercial tungsten basket was used for the evaporation source. The evaporation...

  7. Formation of thin-film resistors on silicon substrates

    DOE Patents [OSTI]

    Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

    1988-11-01T23:59:59.000Z

    The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

  8. Strain mapping on gold thin film buckling and siliconblistering

    SciTech Connect (OSTI)

    Goudeau, P.; Tamura, N.; Parry, G.; Colin, J.; Coupeau, C.; Cleymand, F.; Padmore, H.

    2005-09-01T23:59:59.000Z

    Stress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.

  9. Preparation of redox polymer cathodes for thin film rechargeable batteries

    DOE Patents [OSTI]

    Skotheim, T.A.; Lee, H.S.; Okamoto, Yoshiyuki.

    1994-11-08T23:59:59.000Z

    The present invention relates to the manufacture of thin film solid state electrochemical devices using composite cathodes comprising a redox polymer capable of undergoing oxidation and reduction, a polymer solid electrolyte and conducting carbon. The polymeric cathode material is formed as a composite of radiation crosslinked polymer electrolytes and radiation crosslinked redox polymers based on polysiloxane backbones with attached organosulfur side groups capable of forming sulfur-sulfur bonds during electrochemical oxidation.

  10. Optical sensors and multisensor arrays containing thin film electroluminescent devices

    DOE Patents [OSTI]

    Aylott, Jonathan W. (Ann Arbor, MI); Chen-Esterlit, Zoe (Ann Arbor, MI); Friedl, Jon H. (Ames, IA); Kopelman, Raoul (Ann Arbor, MI); Savvateev, Vadim N. (Ames, IA); Shinar, Joseph (Ames, IA)

    2001-12-18T23:59:59.000Z

    Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

  11. Substrates suitable for deposition of superconducting thin films

    DOE Patents [OSTI]

    Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

    1993-01-01T23:59:59.000Z

    A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  12. Pulsed laser deposition of high-quality thin films of the insulating ferromagnet EuS

    SciTech Connect (OSTI)

    Yang, Qi I., E-mail: qiyang@stanford.edu [Department of Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Zhao, Jinfeng; Risbud, Subhash H. [Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616 (United States); Zhang, Li; Dolev, Merav [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Fried, Alexander D. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Marshall, Ann F. [Stanford Nanocharacterization Laboratory, Stanford University, Stanford, California 94305 (United States); Kapitulnik, Aharon [Department of Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)

    2014-02-24T23:59:59.000Z

    High-quality thin films of the ferromagnetic insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al{sub 2}O{sub 3} (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9?K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties opens the gate for future devices that require a true ferromagnetic insulator.

  13. Geometric shape control of thin film ferroelectrics and resulting structures

    DOE Patents [OSTI]

    McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

    2000-01-01T23:59:59.000Z

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  14. MEMS-based thin-film fuel cells

    DOE Patents [OSTI]

    Jankowksi, Alan F.; Morse, Jeffrey D.

    2003-10-28T23:59:59.000Z

    A micro-electro-mechanical systems (MEMS) based thin-film fuel cells for electrical power applications. The MEMS-based fuel cell may be of a solid oxide type (SOFC), a solid polymer type (SPFC), or a proton exchange membrane type (PEMFC), and each fuel cell basically consists of an anode and a cathode separated by an electrolyte layer. Additionally catalyst layers can also separate the electrodes (cathode and anode) from the electrolyte. Gas manifolds are utilized to transport the fuel and oxidant to each cell and provide a path for exhaust gases. The electrical current generated from each cell is drawn away with an interconnect and support structure integrated with the gas manifold. The fuel cells utilize integrated resistive heaters for efficient heating of the materials. By combining MEMS technology with thin-film deposition technology, thin-film fuel cells having microflow channels and full-integrated circuitry can be produced that will lower the operating temperature an will yield an order of magnitude greater power density than the currently known fuel cells.

  15. Instrument for in-situ orientation of superconducting thin-film resonators used for electron-spin resonance experiments

    E-Print Network [OSTI]

    Mowry, Andrew; Kuabsek, James; Friedman, Jonathan R

    2015-01-01T23:59:59.000Z

    When used in Electron-Spin Resonance (ESR) measurements, superconducting thin-film resonators must be precisely oriented relative to the external magnetic field in order to prevent the trapping of magnetic flux and the associated degradation of resonator performance. We present a compact design solution for this problem that allows in-situ control of the orientation of the resonator at cryogenic temperatures. Tests of the apparatus show that when proper alignment is achieved, there is almost no hysteresis in the field dependence of the resonant frequency.

  16. Nanoscale chemical and mechanical characterization of thin films:sum frequency generation (SFG) vibrational spectroscopy at buriedinterfaces

    SciTech Connect (OSTI)

    Kweskin, S.J.

    2006-05-19T23:59:59.000Z

    Sum frequency generation (SFG) surface vibrational spectroscopy was used to characterize interfaces pertinent to current surface engineering applications, such as thin film polymers and novel catalysts. An array of advanced surface science techniques like scanning probe microscopy (SPM), x-ray photoelectron spectroscopy (XPS), gas chromatography (GC) and electron microscopy were used to obtain experimental measurements complementary to SFG data elucidating polymer and catalyst surface composition, surface structure, and surface mechanical behavior. Experiments reported in this dissertation concentrate on three fundamental questions: (1) How does the interfacial molecular structure differ from that of the bulk in real world applications? (2) How do differences in chemical environment affect interface composition or conformation? (3) How do these changes correlate to properties such as mechanical or catalytic performance? The density, surface energy and bonding at a solid interface dramatically alter the polymer configuration, physics and mechanical properties such as surface glass transition, adhesion and hardness. The enhanced sensitivity of SFG at the buried interface is applied to three systems: a series of acrylates under compression, the compositions and segregation behavior of binary polymer polyolefin blends, and the changes in surface structure of a hydrogel as a function of hydration. In addition, a catalytically active thin film of polymer coated nanoparticles is investigated to evaluate the efficacy of SFG to provide in situ information for catalytic reactions involving small mass adsorption and/or product development. Through the use of SFG, in situ total internal reflection (TIR) was used to increase the sensitivity of SFG and provide the necessary specificity to investigate interfaces of thin polymer films and nanostructures previously considered unfeasible. The dynamic nature of thin film surfaces is examined and it is found that the non-equilibrium states contribute to practical applications of acrylates, blends and hydrogels. Lastly, nanoparticle surfaces and the catalytic activity and selectivity of platinum cube nanoparticles are correlated to the surface intermediates in a high pressure flow reactor.

  17. Methods for fabricating thin film III-V compound solar cell

    DOE Patents [OSTI]

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09T23:59:59.000Z

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  18. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26T23:59:59.000Z

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  19. Effects of aging on the characteristics of TiNiPd shape memory alloy thin films

    SciTech Connect (OSTI)

    Zhang Congchun [Key Laboratory for Thin Film and Micro-fabrication Technology of Ministry of Education, Research Institute of Micro/Nanometer Science and Technology (China)], E-mail: zhcc@mail.sjtu.edu.cn; Yang Chunsheng; Ding Guifu [Key Laboratory for Thin Film and Micro-fabrication Technology of Ministry of Education, Research Institute of Micro/Nanometer Science and Technology (China); Wu Jiansheng [School of Material Science and Engineering, Shanghai Jiaotong University, 200030, Shanghai (China)

    2008-07-15T23:59:59.000Z

    TiNiPd thin films have been deposited on glass substrate using R.F. magnetron sputtering. Effects of annealing and aging on the microstructure, phase transformation behaviors and shape memory effects of these thin films have been studied by X-ray diffractometry, differential scanning calorimeter, tensile tests and internal friction characteristics. The TiNiPd thin films annealed at 750 deg. C exhibit uniform martensite/austenite transformations and shape memory effect. Aging at 450 deg. C for 1 h improved the uniformity of transformations and shape memory effect. Long time aging decreased transformation temperatures and increased the brittleness of TiNiPd thin films.

  20. A thin film model for corotational Jeffreys fluids under strong slip

    E-Print Network [OSTI]

    A. Münch; B. Wagner; M. Rauscher; R. Blossey

    2006-05-14T23:59:59.000Z

    We derive a thin film model for viscoelastic liquids under strong slip which obey the stress tensor dynamics of corotational Jeffreys fluids.

  1. Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics

    E-Print Network [OSTI]

    Ross, April Denise, 1977-

    2005-01-01T23:59:59.000Z

    Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and ...

  2. abrasion-resistant thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  3. al-cu-fe thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  4. alendronate-hydroxyapatite thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  5. as2s3 thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  6. amorphous silicon thin-film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    amorphous silicon Kanicki, Jerzy 17 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  7. ag-in-se thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  8. Electrochemical kinetics of thin film vanadium pentoxide cathodes for lithium batteries

    E-Print Network [OSTI]

    Mui, Simon C., 1976-

    2005-01-01T23:59:59.000Z

    Electrochemical experiments were performed to investigate the processing-property-performance relations of thin film vanadium pentoxide cathodes used in lithium batteries. Variations in microstructures were achieved via ...

  9. Electrically induced insulator to metal transition in epitaxial SmNiO{sub 3} thin films

    SciTech Connect (OSTI)

    Shukla, Nikhil, E-mail: nss152@psu.edu; Dasgupta, Sandeepan; Datta, Suman [Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Joshi, Toyanath; Borisov, Pavel; Lederman, David [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States)

    2014-07-07T23:59:59.000Z

    We report on the electrically induced insulator to metal transition (IMT) in SmNiO{sub 3} thin films grown on (001) LaAlO{sub 3} by pulsed laser deposition. The behavior of the resistivity as a function of temperature suggests that the primary transport mechanism in the SmNiO{sub 3} insulating state is dominated by Efros-Shklovskii variable range hopping (ES-VRH). Additionally, the magnetic transition in the insulating state of SmNiO{sub 3} modifies the characteristics of the ES-VRH transport. Systematic DC and pulsed current-voltage measurements indicate that current-induced joule heating is the fundamental mechanism driving the electrically induced IMT in SmNiO{sub 3}. These transport properties are explained in context of the IMT in SmNiO{sub 3} being related to the strong electron-lattice coupling.

  10. Nonreciprocal dispersion of spin waves in ferromagnetic thin films covered with a finite-conductivity metal

    SciTech Connect (OSTI)

    Mruczkiewicz, M.; Krawczyk, M. [Faculty of Physics, Adam Mickiewicz University in Poznan, Umultowska 85, Pozna? 61-614 (Poland)

    2014-03-21T23:59:59.000Z

    We study the effect of one-side metallization of a uniform ferromagnetic thin film on its spin-wave dispersion relation in the Damon–Eshbach geometry. Due to the finite conductivity of the metallic cover layer on the ferromagnetic film, the spin-wave dispersion relation may be nonreciprocal only in a limited wave-vector range. We provide an approximate analytical solution for the spin-wave frequency, discuss its validity, and compare it with numerical results. The dispersion is analyzed systematically by varying the parameters of the ferromagnetic film, the metal cover layer and the value of the external magnetic field. The conclusions drawn from this analysis allow us to define a structure based on a 30?nm thick CoFeB film with an experimentally accessible nonreciprocal dispersion relation in a relatively wide wave-vector range.

  11. B{sub 4}C thin films for neutron detection

    SciTech Connect (OSTI)

    Hoeglund, Carina [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Birch, Jens; Jensen, Jens; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Andersen, Ken; Hall-Wilton, Richard [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Bigault, Thierry; Buffet, Jean-Claude; Correa, Jonathan; Esch, Patrick van; Guerard, Bruno; Piscitelli, Francesco [Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Khaplanov, Anton [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Vettier, Christian [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); European Synchrotron Radiation Facility, BP 220, FR-380 43 Grenoble Cedex 9 (France); Vollenberg, Wilhelmus [Vacuum, Surfaces and Coatings Group (TE/VSC), CERN, CH-1211 Geneva 23 (Switzerland)

    2012-05-15T23:59:59.000Z

    Due to the very limited availability of {sup 3}He, new kinds of neutron detectors, not based on {sup 3}He, are urgently needed. Here, we present a method to produce thin films of {sup 10}B{sub 4}C, with maximized detection efficiency, intended to be part of a new generation of large area neutron detectors. B{sub 4}C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from {sup nat}B{sub 4}C and {sup 10}B{sub 4}C targets in an Ar discharge, using an industrial deposition system. The films were characterized with scanning electron microscopy, elastic recoil detection analysis, x-ray reflectivity, and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8 A/s and substrate temperature of 400 deg. C result in films with a density close to bulk values and good adhesion to film thickness above 3 {mu}m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m{sup 2} of 1 {mu}m thick {sup 10}B{sub 4}C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness, number of layers, neutron wavelength, and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas, which for a full-scale detector could be in total {approx}1000 m{sup 2} of two-side coated Al-blades with {approx}1 {mu}m thick {sup 10}B{sub 4}C films.

  12. Fractal-Mound Growth of Pentacene Thin Films

    E-Print Network [OSTI]

    Serkan Zorba; Yonathan Shapir; Yongli Gao

    2006-10-19T23:59:59.000Z

    The growth mechanism of pentacene film formation on SiO2 substrate was investigated with a combination of atomic force microscopy measurements and numerical modeling. In addition to the diffusion-limited aggregation (DLA) that has already been shown to govern the growth of the ordered pentacene thin films, it is shown here for the first time that the Schwoebel barrier effect steps in and disrupts the desired epitaxial growth for the subsequent layers, leading to mound growth. The terraces of the growing mounds have a fractal dimension of 1.6, indicating a lateral DLA shape. This novel growth morphology thus combines horizontal DLA-like growth with vertical mound growth.

  13. Thin film solar cell including a spatially modulated intrinsic layer

    DOE Patents [OSTI]

    Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

    1989-03-28T23:59:59.000Z

    One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

  14. Oriented niobate ferroelectric thin films for electrical and optical devices

    DOE Patents [OSTI]

    Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Chicago, IL)

    2001-01-01T23:59:59.000Z

    Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

  15. Thin film superconductors and process for making same

    DOE Patents [OSTI]

    Nigrey, P.J.

    1988-01-21T23:59:59.000Z

    A process for the preparation of oxide superconductors from high-viscosity non-aqueous solution is described. Solutions of lanthanide nitrates, alkaline earth nitrates and copper nitrates in a 1:2:3 stoichiometric ratio, when added to ethylene glycol containing citric acid solutions, have been used to prepare highly viscous non-aqueous solutions of metal mixed nitrates-citrates. Thin films of these compositions are produced when a layer of the viscous solution is formed on a substrate and subjected to thermal decomposition.

  16. Durable silver thin film coating for diffraction gratings

    DOE Patents [OSTI]

    Wolfe, Jesse D. (Discovery Bay, CA); Britten, Jerald A. (Oakley, CA); Komashko, Aleksey M. (San Diego, CA)

    2006-05-30T23:59:59.000Z

    A durable silver film thin film coated non-planar optical element has been developed to replace Gold as a material for fabricating such devices. Such a coating and resultant optical element has an increased efficiency and is resistant to tarnishing, can be easily stripped and re-deposited without modifying underlying grating structure, improves the throughput and power loading of short pulse compressor designs for ultra-fast laser systems, and can be utilized in variety of optical and spectrophotometric systems, particularly high-end spectrometers that require maximized efficiency.

  17. Thin-film electrochemical power cells. Final report

    SciTech Connect (OSTI)

    Owens, B.B.; Smyrl, W.H.

    1991-01-01T23:59:59.000Z

    Fundamental properties of research cells were correlated with the projected performance of full scale power sources, considering both battery and supercapacitor concepts. In addition to establishing the data base for modelling and performance projections, the program had the additional objective of identifying loss mechanisms and degradation reactions, especially those unique to polymer thin film cell designs. Because of the intrinsic high electrode/electrolyte interface areas, interfacial reactions must be understood. Many applications require power under extreme conditions, and low temperature performance needs to be improved.

  18. NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated CodesTransparency Visit |Infrastructure JohnEnergyThin Film Photovoltaic

  19. Thin Film Deposition Method for Sensor Manufacturing - Energy Innovation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin Transition in theTheoreticalEnergy InnovationThin Film CIGS

  20. Magnetoimpedance effect at the high frequency range for the thin film geometry: Numerical calculation and experiment

    E-Print Network [OSTI]

    M. A. Corrêa; F. Bohn; R. B. da Silva; R. L. Sommer

    2014-11-04T23:59:59.000Z

    The magnetoimpedance effect is a versatile tool to investigate ferromagnetic materials, revealing aspects on the fundamental physics associated to magnetization dynamics, broadband magnetic properties, important issues for current and emerging technological applications for magnetic sensors, as well as insights on ferromagnetic resonance effect at non-saturated magnetic states. Here, we perform a theoretical and experimental investigation of the magnetoimpedance effect for the thin film geometry in a wide frequency range. We calculate the longitudinal magnetoimpedance for single layered, multilayered or exchange biased systems from an approach that considers a magnetic permeability model for planar geometry and the appropriate magnetic free energy density for each structure. From numerical calculations and experimental results found in literature, we analyze the magnetoimpedance behavior, and discuss the main features and advantages of each structure. To test the robustness of the approach, we directly compare theoretical results with experimental magnetoimpedance measurements obtained in a wide range of frequencies for an exchange biased multilayered film. Thus, we provide experimental evidence to confirm the validity of the theoretical approach employed to describe the magnetoimpedance in ferromagnetic films, revealed by the good agreement between numerical calculations and experimental results.

  1. Scanning Tunneling Spectroscopy of Graphene and Magnetic Nanostructures

    E-Print Network [OSTI]

    Brar, Victor Watson

    2010-01-01T23:59:59.000Z

    C. J. Chen, Introduction to Scanning Tunneling Microscopy (Scanning Tunneling Spectroscopy of Graphene and MagneticAli Javey Fall 2010 Scanning Tunneling Spectroscopy of

  2. It all began in 2001, when three NREL researchers took their thin-film expertise from window technology research and applied it to a solid-state, thin-film lithium battery. The researchers

    E-Print Network [OSTI]

    window technology research and applied it to a solid-state, thin-film lithium battery. The researchers

  3. Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor

    E-Print Network [OSTI]

    Nominanda, Helinda

    2004-01-01T23:59:59.000Z

    The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

  4. Investigation of Solar Energy Transfer through Plasmonic Au Nanoparticle-doped Sol-derived TiO? Thin Films in Photocatalysis and Photovoltaics /

    E-Print Network [OSTI]

    Zelinski, Andrew

    2013-01-01T23:59:59.000Z

    TiO 2 Thin Films in Photocatalysis and Photovoltaics ATiO 2 Thin Films in Photocatalysis and Photovoltaics by

  5. Novel microwave assisted sol–gel synthesis (MW-SGS) and electrochromic performance of petal like h-WO{sub 3} thin films

    SciTech Connect (OSTI)

    Kharade, Rohini R., E-mail: k_rohini@in.com [Materials Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur 416004 (India); Patil, K.R. [Centre for Materials Characterization, National Chemical Laboratory, Pune, MH (India)] [Centre for Materials Characterization, National Chemical Laboratory, Pune, MH (India); Patil, P.S. [Thin Film Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India)] [Thin Film Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India); Bhosale, P.N., E-mail: p_n_bhosale@rediffmail.com [Materials Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur 416004 (India)

    2012-07-15T23:59:59.000Z

    Graphical abstract: Electrochromic intercalation and deintercalation of Li{sup +} ions and electrons is facilitated by providing hexagonal tunnel, trigonal cavity and square window which allows easy and fast insertion and extraction of ions. Highlights: ? Novel two step MW-SGS is first time employed to prepare WO{sub 3} thin films. ? MW-SGS is simple and cost effective technique for preparation of nanostructures. ? Petal-like hexagonal WO{sub 3} nanodisks were successfully deposited. ? O/W ratio calculated by XPS studies is 2.89. ? Good electrochromic performance suggests practical usability of proposed technique. -- Abstract: Use of domestic microwave oven is first time employed for chemical deposition of nanocrystalline hexagonal WO{sub 3} (h-WO{sub 3}) thin films. Low cost precursors like sodium tungstate, hydrochloric acid, oxalic acid and potassium sulfate signifies cost effectiveness of this thin film fabrication route. Scanning electron microscopy images reveal formation of petal like nanodisks. A number of analytical techniques were used to characterize the WO{sub 3} petal like nanodisks, including X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy, FT-IR spectroscopy, Raman scattering spectroscopy, UV–visible spectrophotometry and cyclic voltammetry (CV). The X-ray photoelectron spectroscopic studies revealed 2.89 O/W atomic ratio. The electrical transport studies on WO{sub 3} thin films show semiconducting behavior with n-type semiconductivity. The value of determined coloration efficiency is 57.90 cm{sup 2}/C. The mechanism of Li{sup +} intercalation and deinercalation in h-WO{sub 3} matrix is proposed for enhanced electrochromism.

  6. Band Gap Energy of Chalcopyrite Thin Film Solar Cell Absorbers Determined by Soft X-Ray Emission and Absorption Spectroscopy

    E-Print Network [OSTI]

    Bar, M.

    2010-01-01T23:59:59.000Z

    8] J.R. Tuttle et al. , Solar Cells 30, 21 (1991). [9] D.OF CHALCOPYRITE THIN FILM SOLAR CELL ABSORBERS DETERMINED BYchalcopyrite thin film solar cell absorbers significantly

  7. Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film

    E-Print Network [OSTI]

    Deng, Xunming

    Analytical model for the optical functions of amorphous semiconductors from the near functions of thin film semiconductors are useful for two important purposes, namely, materials, reflectance, and ellipso- metric spectra obtained on the thin film semiconductors. The conventional analysis

  8. New measurement capability measures semiconductor minority-carrier lifetimes in conditions that simulate thin-film

    E-Print Network [OSTI]

    that simulate thin-film photovoltaic manufacturing environments. National Renewable Energy Laboratory (NREL of conditions in a thin-film photovoltaic (PV) manufacturing line. NREL's work in recent years has demonstrated system. The system, shown below, couples femtosecond laser pulses with optical fibers while avoiding

  9. Bill Shafarman 1 May 15, 2013 Thin Film Photovoltaics Research at the

    E-Print Network [OSTI]

    Firestone, Jeremy

    Bill Shafarman 1 May 15, 2013 Thin Film Photovoltaics Research at the Institute of Energy of Photovoltaics 2. IEC: History and Capabilities 3. Current Research at IEC #12;Bill Shafarman 2 May 15, 2013 Concentrators #12;Bill Shafarman 5 May 15, 2013 Thin Film Photovoltaics Potential for low cost PV using " a

  10. Thin-Film Active Nano-PWAS for Structural Health Monitoring , Victor Giurgiutiu1

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    Thin-Film Active Nano-PWAS for Structural Health Monitoring Bin Lin1 , Victor Giurgiutiu1 , Amar S 3 University of Texas Arlington, Arlington, TX 76019 ABSTRACT Structural health monitoring (SHM is to develop the fabrication and optimum design of thin-film nano-PWAS for structural health monitoring

  11. Bi-Sr-Ca-Cu-O thin films grown by flash evaporation and pulsed laser deposition 

    E-Print Network [OSTI]

    Ganapathy Subramanian, Santhana

    2004-09-30T23:59:59.000Z

    . Thin films were grown by flash evaporation at Texas A&M University, and by pulsed laser deposition (PLD) at the University of Wollongong, Australia. The latter of these techniques is widely used for growing thin films of various compounds. Single...

  12. Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer Encapsulation

    E-Print Network [OSTI]

    Javey, Ali

    Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer report hysteresis-free carbon nanotube thin-film transistors (CNT-TFTs) employing a fluorocarbon polymer (Teflon-AF) as an encapsulation layer. Such fluorocarbon encapsulation improves device uniformity

  13. LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle

    E-Print Network [OSTI]

    Sites, James R.

    -film polycrystalline solar cells, such as CdTe and CIGS, and the overall performance of these cells. LBIC is uniquelyLBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two

  14. Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film transistors

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film 2009 The electrical degradation aging of copper phthalocyanine CuPc organic thin film transistors OTFTs layer.6,17,18 A systematic approach to iso- lating the cause of device degradation "aging" in copper

  15. Adhesion degradation and water diffusion in nanoporous organosilicate glass thin film stacks

    E-Print Network [OSTI]

    1 Adhesion degradation and water diffusion in nanoporous organosilicate glass thin film stacks adhesion degradation of the capping layer on top of the NPOSG. We have used this adhesion degradation degradation; Thin films --------------- Correspondence should be sent to Joost J. Vlassak, vlassak

  16. Numerical Simulation of Phase Transformations in Shape Memory Alloy Thin Films

    E-Print Network [OSTI]

    Melnik, Roderick

    Numerical Simulation of Phase Transformations in Shape Memory Alloy Thin Films Debiprosad Roy- tions of phase transformation dynamics in shape memory alloy thin films are reported in this paper transformation path from austenite to martensites and recovers the original shape. This is known as shape memory

  17. Thermoelastic strain in polycrystalline FePd shape memory alloy thin film Jun Hyun Han a,

    E-Print Network [OSTI]

    Thermoelastic strain in polycrystalline Fe­Pd shape memory alloy thin film Jun Hyun Han a, , Juil shape memory alloy Elastic modulus Wrinkling Thermoelastic strain in a polycrystalline Fe­Pd thin film due to shape memory effect was determined from Hooke's law using the measured residual stress

  18. Crystallization kinetics of amorphous NiTi shape memory alloy thin films

    E-Print Network [OSTI]

    Crystallization kinetics of amorphous NiTi shape memory alloy thin films Xi Wang, Joost J. Vlassak rights reserved. Keywords: Shape memory alloy thin films; Crystallization kinetics; Activation energy; Grain size 1. Introduction Shape memory alloys (SMAs) are active materials that derive their unique

  19. Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell

    E-Print Network [OSTI]

    to bring down the cost of photovoltaic (PV) solar cells has gained huge momentum, and many strategiesOptimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic

  20. Influence of Ba content on grain size and dynamics of crystallization in barium ferrite thin films

    E-Print Network [OSTI]

    Laughlin, David E.

    Influence of Ba content on grain size and dynamics of crystallization in barium ferrite thin films of the crystallization process, which ultimately determines the grain size, were studied in barium ferrite thin films. Rapid thermal annealing was used to crystallize the amorphous as-deposited barium ferrite films

  1. Synthesis and Characterization of NiMnGa Ferromagnetic Shape Memory Alloy Thin Films

    E-Print Network [OSTI]

    Jetta, Nishitha

    2011-10-21T23:59:59.000Z

    for fabricating NiMnGa thin films with desired composition and microstructure and hence unique properties for future MEMS actuator materials and characterize their properties to aid better understanding of their behavior. In this project NiMnGa thin films have...

  2. Study of lithium diffusion in RF sputtered Nickel/Vanadium mixed oxides thin films

    E-Print Network [OSTI]

    Artuso, Florinda

    Study of lithium diffusion in RF sputtered NickelÁ/Vanadium mixed oxides thin films F. Artuso a lithium insertion inside RF sputtered Ni/V mixed oxides thin films have been investigated employing, showed three steps clearly involved in the intercalation mechanism of lithium in the oxide films: (i

  3. Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave

    E-Print Network [OSTI]

    Afshari, Ehsan

    Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave School Micro Devices, Inc. Greensboro, North Carolina, USA Abstract--This paper presents Lithium Niobate (LN this platform, we demonstrate, on a black Y136 cut Lithium Niobate thin-film, one-port high-order width

  4. THE THIN FILM EQUATION WITH "BACKWARDS" FORCING AMY NOVICK-COHEN

    E-Print Network [OSTI]

    Novick-Cohen, Amy

    THE THIN FILM EQUATION WITH "BACKWARDS" FORCING AMY NOVICK-COHEN DEPARTMENT OF MATHEMATICS TECHNION-2007) Abstract. In this paper, we focus on the thin film equation with lower order "backwards" diffusion which can describe, for example, structure formation in biofilms and the evolution of thin viscous films

  5. Hole Growth as a Microrheological Probe to Measure the Viscosity of Polymers Confined to Thin Films

    E-Print Network [OSTI]

    Dutcher, John

    Hole Growth as a Microrheological Probe to Measure the Viscosity of Polymers Confined to Thin Films thin freely-standing films revealed that hole formation and growth occurs only at temperatures: 3011­3021, 2006 Keywords: glass transition; nanoscale confinement; rheology; thin films; viscoelastic

  6. Phase Transformations in Pulsed Laser Deposited Nanocrystalline Tin Oxide Thin Films

    E-Print Network [OSTI]

    Reid, Scott A.

    Phase Transformations in Pulsed Laser Deposited Nanocrystalline Tin Oxide Thin Films Haiyan Fan August 20, 2002. Revised Manuscript Received November 11, 2002 Thin SnOx films have been synthesized of reducing gases,1-3 and thin films have been synthesized by various means including evapora- tion,4

  7. Biomimetic Synthesis of Macroscopic-Scale Calcium Carbonate Thin Films. Evidence for a Multistep Assembly Process

    E-Print Network [OSTI]

    Aksay, Ilhan A.

    Biomimetic Synthesis of Macroscopic-Scale Calcium Carbonate Thin Films. Evidence for a Multistep growth modification and cessation, and so on. Highly ordered calcium carbonate lamellae formed have synthesized macroscopic and continuous calcium carbonate thin films with thickness ranging from 0

  8. Self-similar solutions for a fractional thin film equation governing hydraulic fractures

    E-Print Network [OSTI]

    Boyer, Edmond

    Self-similar solutions for a fractional thin film equation governing hydraulic fractures C. Imbert equation governing hydraulic fractures are constructed. One of the boundary con- ditions, which accounts, 35R11, 35C06 Keywords: Hydraulic fractures, higher order equation, thin films, fractional Laplacian

  9. Industrial Upscaling of CdTe/CdS Thin Film Solar Cells , A. Bosioa

    E-Print Network [OSTI]

    Romeo, Alessandro

    , these devices are already produced in modules of 60x120 cm2 by two companies, namely Antec Solar in GermanyIndustrial Upscaling of CdTe/CdS Thin Film Solar Cells N. Romeoa , A. Bosioa , A. Romeob , S, ABSTRACT: CdTe/CdS thin film solar cells, since they are made with easily scalable techniques

  10. High temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding

    E-Print Network [OSTI]

    Bowers, John

    bonding Je-Hyeong Bahka) , Gehong Zenga) , Joshua M. O. Zide b) , Hong Luc) , Rajeev Singhd) , Di Lianga bonding technique is developed for high temperature thermoelectric characterization of the thin film III-W-N diffusion barrier. A thermoelectric material, thin film ErAs:InGaAlAs metal/semiconductor nanocomposite

  11. Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

    DOE Patents [OSTI]

    Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

    2013-06-11T23:59:59.000Z

    Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

  12. High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability For EmbeddedDecoupling

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability, the capacitance density would be much lower. Newer capacitor concepts such as supercapacitors can overcome and the suitability of the thin film supercapacitors for high-frequency decoupling applications will be discussed. 1

  13. DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS Clean and environmentally friendly photovoltaic

  14. Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    solar cells M. Duchamp1 , M. den Hertog2 , R. Imlau1 , C. B. Boothroyd1 , A. Kovács1 , A. H. Tavabi1, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active absorber layers in solar cells deposited on low cost substrates using plasma-enhanced chemical vapour

  15. METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Peale, Robert E.

    METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS by DEEP R surface of thin-film solar cells to improve efficiency. The principle is that scattering, which film solar cell. The particular types of particles investigated here are known as "metal-black", well

  16. Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)

    SciTech Connect (OSTI)

    Ambrose Wolf; Ken Peterson; Matt O'Keefe; Wayne Huebner; Bill Kuhn

    2012-04-19T23:59:59.000Z

    Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti-Cu-Pt-Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor - a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti-Cu-Pt-Au), or a specially tailored thin film material (e.g. Ti-Cu-Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

  17. High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator

    E-Print Network [OSTI]

    1 High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator Zhonghe as the gate insulator for low temperature (SiGe thin film transistors (TFTs) has been between the Al2O3 and the SiGe channel layer is sufficiently passivated to make Al2O3 a better alternative

  18. Plasticity in Cu thin films: an experimental investigation of the effect of microstructure

    E-Print Network [OSTI]

    Plasticity in Cu thin films: an experimental investigation of the effect of microstructure A thesis Author Joost J. Vlassak Yong Xiang Plasticity in Cu thin films: an experimental investigation is constructed. The elastic-plastic behavior of Cu films is studied with emphasis on the effects

  19. Plasticity contributions to interface adhesion in thin-film interconnect structures

    E-Print Network [OSTI]

    Vainchtein, Anna

    Plasticity contributions to interface adhesion in thin-film interconnect structures Michael Lanea of plasticity in thin copper layers on the interface fracture resistance in thin-film interconnect structures yield properties together with a plastic flow model for the metal layers were used to predict

  20. Europium and samarium doped calcium sulfide thin films grown by PLD S. Christoulakis a,c

    E-Print Network [OSTI]

    Europium and samarium doped calcium sulfide thin films grown by PLD S. Christoulakis a,c , M Suchea Abstract Europium and samarium doped calcium sulfide thin films (CaS:Eu,Sm) with different thickness were and crystallinity. In this work we present preliminary results related to the deposition of europium and samarium

  1. DOE/SERI polycrystalline thin-film photovoltaic research

    SciTech Connect (OSTI)

    Hermann, A.; Zweibel, K.; Mitchell, R.

    1984-05-01T23:59:59.000Z

    This paper presents recent results, status, and future prospects for the US Department of Energy's (DOE's) Polycrystalline Thin Film Photovoltaic program, managed by the Solar Energy Research Institute (SERI). The devices being studied most intensively are heterojunctions based on CuInSe/sub 2/ and on CdTe. Both materials have attained over 10% efficiency in polycrystalline form. The main emphasis is on CuInSe/sub 2/, for which Boeing has reported an 11%-efficient device (AMl ELH simulation). Important work is being done on studies of the composition/electronic properties of CuInSe/sub 2/ and its response to post-deposition annealing. In the CdTe research, ohmic, stable back-contacting and control of p-type doping are being investigated. New efforts to study polycrystalline two-junction stacked cells are underway with two-terminal cells (at IEC) and with four-terminal cells (at SMU). This preliminary work is expected to be expanded, with emphasis on CdTe and other top-cell (high-bandgap) materials. These efforts introduce a number of new research areas (e.g., transparent ohmic contacts to p-CdTe and sub-bandgap light-losses in polycrystalline materials). The aim of the program is to produce stable, high-efficiency (15%), thin-film cells that can be deposited inexpensively by techniques that are scalable to large areas.

  2. Liquid phase deposition synthesis of hexagonal molybdenum trioxide thin films

    SciTech Connect (OSTI)

    Deki, Shigehito; Beleke, Alexis Bienvenu; Kotani, Yuki [Department of Chemical Science and Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokko, Nada, Kobe 657-8501 (Japan); Mizuhata, Minoru, E-mail: mizuhata@kobe-u.ac.j [Department of Chemical Science and Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokko, Nada, Kobe 657-8501 (Japan)

    2009-09-15T23:59:59.000Z

    Hexagonal molybdenum trioxide thin films with good crystallinity and high purity have been fabricated by the liquid phase deposition (LPD) technique using molybdic acid (H{sub 2}MoO{sub 4}) dissolved in 2.82% hydrofluoric acid (HF) and H{sub 3}BO{sub 3} as precursors. The crystal was found to belong to a hexagonal hydrate system MoO{sub 3}.nH{sub 2}O (napprox0.56). The unit cell lattice parameters are a=10.651 A, c=3.725 A and V=365.997 A{sup 3}. Scanning electron microscope (SEM) images of the as-deposited samples showed well-shaped hexagonal rods nuclei that grew and where the amount increased with increase in reaction time. X-ray photon electron spectroscopy (XPS) spectra showed a Gaussian shape of the doublet of Mo 3d core level, indicating the presence of Mo{sup 6+} oxidation state in the deposited films. The deposited films exhibited an electrochromic behavior by lithium intercalation and deintercalation, which resulted in coloration and bleaching of the film. Upon dehydration at about 450 deg. C, the hexagonal MoO{sub 3}.nH{sub 2}O was transformed into the thermodynamically stable orthorhombic phase. - Abstract: SEM photograph of typical h-MoO{sub 3}.nH{sub 2}O thin film nuclei obtained after 36 h at 40 deg. C by the LPD method. Display Omitted

  3. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03T23:59:59.000Z

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  4. Magnetic thin films formed in a glow discharge. Final report

    SciTech Connect (OSTI)

    O`Keefe, T.J.; James, W.J.

    1994-10-28T23:59:59.000Z

    Since this project is a continuation of a cooperative effort between UMR and General Motor Research Laboratories (GMR), it seemed fitting to provide some background information which was instrumental in the evolution of this program. A family of filled epoxies that can be cast-to-size into sheet metal stamping dies has been developed by GMR. Advantages of this material over commercial plastic tooling materials are a fast curing rate, high strength, and negligible volume shrinkage after curing. Superior Tooling And Molding Plastic (STAMP) tooling dies are considerably cheaper and faster to make than steel tooling dies; therefore, they are currently used for prototype applications throughout General Motors. With improvement of wear resistance, STAMP dies can be used for limited production applications involving 10,000 or 20,000 parts. GMR proposed to provide a thin (< 25 {micro}m) wear surface for the cast-to-size STAMP die to extend its wear performance. The objective of the University of Missouri-Rolla (UMR) research effort is to technically evaluate methodologies to coat STAMP material to appreciably improve wear resistance. This does not necessarily mean that various types of coatings will be developed and evaluated. Rather, the primary responsibility is to characterize the nature of the STAMP material and design engineered films which will lead to an optimized system. An example of this was the finding that a thin polymer layer existed on the surface of an as-cast STAMP die necessitating removal if satisfactory adherence and toughness were to be attained. The next important finding involved the influence of particle size on wear. The theme of the research approach was maintained throughout the course of the project, with improvements being made as the causes of failure were determined and appropriate corrections or improvements were made.

  5. Symposuim on Biological Applications Sarah Majetich, of Magnetic Nanostructures Chairman

    E-Print Network [OSTI]

    Chen, Christopher S.

    , and to optimize functionalization of two-segment gold­nickel nanowires for selectivity and stability. One type of particle with significant potential in this area is electrodeposited magnetic nanowires

  6. Enhanced breakdown voltage and reduced self-heating effects in thin-film lateral bipolar transistors: Design and

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    Enhanced breakdown voltage and reduced self-heating effects in thin-film lateral bipolar breakdown and self-heating characteristics of a new collector-tub three-zone step doped thin-film lateral-doping; Collector-tub; Silicon-on-insulator; Self-heating 1. Introduction High voltage thin-film (

  7. Quasi-Rheotaxy a new technique to grow large grain thin films on low cost amorphous substrates (*)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    , could be used to build low cost thin film solar cells. Revue Phys. Appl. 16 (1981) 11-14 JANVIER 1981 is required in thin film direct gap absorbers solar cells to overcome thebfficiency value of 10 % is about 2 comparable with the grain size, reports that a thin film solar cell based on GaAs with a resistivity of 10

  8. Low pressure and atmospheric pressure plasma-jet systems and their application for deposition of thin films

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    of thin films Z. Hubicka1 , M. Cada1 , O. Churpita1 , P. Virostko1,2 , P. Adámek3 , H. Síchová2 , M. Sícha. The target was to deposit such kind of thin films with crystalline structure at low temperature in order) perovskite thin films on kapton (polymer) foil with Pt electrode layer. The RF hollow cathode nozzle

  9. Dopant Ion Size and Electronic Structure Effects on Transparent Conducting Oxides. Sc-Doped CdO Thin Films

    E-Print Network [OSTI]

    Medvedeva, Julia E.

    O Thin Films Grown by MOCVD Shu Jin,, Yu Yang,, Julia E. Medvedeva,,§ John R. Ireland,| Andrew W. Metz-doped CdO (CSO) thin films have been grown on both amorphous glass and single-crystal MgO(100) substrates) at a Sc doping level of 1.8 atom %. The CSO thin films exhibit an average transmittance >80

  10. High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the Period

    E-Print Network [OSTI]

    Deng, Xunming

    High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the Period This is the final report covering approximately 42 months of this subcontract for research on high efficiency CdTe-based thin-film solar cells and on high efficiency a-Si-based thin-film solar cells. Phases I and II have

  11. Functional Materials Letters (FML) Metal-to-dielectric transition induced by annealing of oriented titanium thin films

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    titanium thin films --Manuscript Draft-- Manuscript Number: Full Title: Metal-to-dielectric transition induced by annealing of oriented titanium thin films Article Type: Research Paper Section/Category: Prof. Order of Authors Secondary Information: Abstract: Titanium thin films were deposited by dc magnetron

  12. Transient response of thin film SiGe micro coolers Alberto Fitting, James Christofferson, Xiofeng Fan, Gehong Zeng,

    E-Print Network [OSTI]

    Transient response of thin film SiGe micro coolers Alberto Fitting, James Christofferson, Xiofeng The transient response of thin film SiGe micro coolers is measured using a thremoreflectance technique. Response are used in many of these applications. Several features of thin film SiGe micro coolers give them

  13. Unusual Function of Modified Polyolefins for Manipulating Magnetic Nanostructures

    E-Print Network [OSTI]

    Guo, John Zhanhu

    (CO)5 or Co2(CO)8] in the presence of PP-g-MA in solvent xylene. By simply changing the backbone length. Among many developed approaches (high-temperature reduction, evapo- ration­condensation, melting-dependent physicochemical properties. The morphology (size and shape) control of magnetic NPs by many small molecular

  14. Epitaxial growth and characterization of Eu{sub 0.5}Sr{sub 0.5}CoO{sub 3} thin films by off-axis sputtering

    SciTech Connect (OSTI)

    Kwon, Daeyoung; Wu, Youngsu; Kim, Bongju [Department of Physics and Research Center for Dielectric and Advanced Matter Physics, Pusan National University, Busan 609-735 (Korea, Republic of); Kim, Bog G. [Department of Physics and Research Center for Dielectric and Advanced Matter Physics, Pusan National University, Busan 609-735 (Korea, Republic of); Department of Advanced Materials Science, University of Tokyo, Chiba 277-8561 (Japan); Hwang, Harold Y. [Department of Advanced Materials Science, University of Tokyo, Chiba 277-8561 (Japan); Japan Science and Technology Agency, Kawaguchi 332-0012 (Japan)

    2009-09-21T23:59:59.000Z

    We report the epitaxial growth and physical properties of Eu{sub 0.5}Sr{sub 0.5}CoO{sub 3} (ESCO) thin films deposited on (001) LaAlO{sub 3} (LAO) and (001) SrTiO{sub 3} (STO) substrates by off-axis rf sputtering. The magnetic properties of a grown film are governed by the crystallinity of the thin film and strain effects due to the substrate. The temperature-dependent resistivity of an optimized ESCO thin film on a LAO substrate shows a characteristic sudden decrease near the ferromagnetic transition temperature, indicating metallic double-exchange-like behavior, while the resistivity of ESCO on a STO substrate displays insulatinglike behavior because of substrate strain. These results suggest that optimized ESCO film on LAO is ideal as a bottom electrode for strained dielectric and ferroelectric heterostructures.

  15. Plasmonic Nanostructure Design for Efficient Light Coupling into Solar Cells

    E-Print Network [OSTI]

    Atwater, Harry

    Plasmonic Nanostructure Design for Efficient Light Coupling into Solar Cells Vivian E. Ferry, Luke sunlight into guided modes in thin film Si and GaAs plasmonic solar cells whose back interface is coated. These findings show promise for the design of ultrathin solar cells that exhibit enhanced absorption

  16. Microstructure of amorphous indium oxide and tin oxide thin films

    SciTech Connect (OSTI)

    Rauf, I.A.; Brown, L.M. (Univ. of Cambridge (United Kingdom))

    1994-03-15T23:59:59.000Z

    Indium oxide, tin oxide, and some other doped and undoped oxide semiconductors show an interesting and technologically important combination of properties. They have high luminous transparency, good electrical conductivity and high infrared reflectivity. Numerous techniques for depositing these materials have been developed and have undergone a number of changes during last two decades. An understanding of the basic physics of these materials has begun to dawn. Most of the literature on transparent conducting oxides consists of studying the dependence of the properties on the composition, preparation conditions, such as deposition rate, substrate temperature or post-deposition heat treatment. In this paper the authors have employed the transmission electron microscopy to study the microstructure of reactively evaporated, electron beam evaporated, ion-beam sputtered amorphous indium oxide and reactively evaporated amorphous tin oxide thin films. These films, which have received little attention in the past, can have enormous potential as transparent conductive coatings on heat-sensitive substrates and inexpensive solar cells.

  17. Monitoring plasma treatment of thin films by surface plasmon resonance

    SciTech Connect (OSTI)

    Laha, Ranjit, E-mail: laharanjit@gmail.com [Department of Physics, National Institute of Technology Raipur, 492010 Raipur (India)] [Department of Physics, National Institute of Technology Raipur, 492010 Raipur (India); Manivannan, A. [US Department of Energy, National Energy Technology Laboratory, Morgantown, West Virginia 26507 (United States)] [US Department of Energy, National Energy Technology Laboratory, Morgantown, West Virginia 26507 (United States); Kasiviswanathan, S. [Department of Physics, Indian Institute of Technology Madras, 600036 Chennai (India)] [Department of Physics, Indian Institute of Technology Madras, 600036 Chennai (India)

    2014-03-15T23:59:59.000Z

    We report the surface plasmon resonance (SPR) measurements during plasma treatment of thin films by an indigenously designed setup. From the measurements on Al (6.3 nm)/Ag (38 nm) bi-layer at a pressure of 0.02 mbar, the SPR position was found to be shifted by ?20° after a plasma treatment of ?7 h. The formation of oxide layers during plasma oxidation was confirmed by glancing angle x-ray diffraction (GXRD) measurements. Combined analysis of GXRD and SPR data confirmed that while top Al layer enables controlling plasma oxidation of Ag, the setup enables monitoring the same. The setup designed is a first of its kind for in situ SPR studies where creation of low pressure is a prerequisite.

  18. Absorption of surface acoustic waves by topological insulator thin films

    SciTech Connect (OSTI)

    Li, L. L., E-mail: lllihfcas@foxmail.com [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Xu, W., E-mail: wenxu-issp@aliyun.com [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Department of Physics, Yunnan University, Kunming 650091 (China)

    2014-08-11T23:59:59.000Z

    We present a theoretical study on the absorption of the surface acoustic waves (SAWs) by Dirac electrons in topological insulator (TI) thin films (TITFs). We find that due to momentum and energy conservation laws, the absorption of the SAWs in TITFs can only be achieved via intra-band electronic transitions. The strong absorption can be observed up to sub-terahertz frequencies. With increasing temperature, the absorption intensity increases significantly and the cut-off frequency is blue-shifted. More interestingly, we find that the absorption of the SAWs by the TITFs can be markedly enhanced by the tunable subgap in the Dirac energy spectrum of the TI surface states. Such a subgap is absent in conventional two-dimensional electron gases (2DEGs) and in the gapless Dirac 2DEG such as graphene. This study is pertinent to the exploration of the acoustic properties of TIs and to potential application of TIs as tunable SAW devices working at hypersonic frequencies.

  19. Thermoelectric effect in very thin film Pt/Au thermocouples

    SciTech Connect (OSTI)

    Salvadori, M.C.; Vaz, A.R.; Teixeira, F.S.; Cattani, M.; Brown,I.G.

    2006-01-10T23:59:59.000Z

    The thickness dependence of the thermoelectric power of Pt films of variable thickness on a reference Au film has been determined for the case when the Pt film thickness, t, is not large compared to the charge carrier mean free path, {ell}, that is, t/{ell}. Pt film thicknesses down to 2.2 nm were investigated. We find that {Delta}S{sub F} = S{sub B}-S{sub F} (where S{sub B} and S{sub F} are the thermopowers of the Pt bulk and film, respectively) does not vary linearly as 1/t as is the case for thin film thermocouples when the film thickness is large compared to the charge carrier mean free path.

  20. Long-laser-pulse method of producing thin films

    DOE Patents [OSTI]

    Balooch, Mehdi (Berkeley, CA); Olander, Donald K. (Berkeley, CA); Russo, Richard E. (Walnut Creek, CA)

    1991-01-01T23:59:59.000Z

    A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.